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Sample records for normal metal tunneling

  1. Coherent tunnelling conductance in normal-metal/d-wave superconductor/normal-metal double tunnel junctions

    International Nuclear Information System (INIS)

    Dong, Z C; Zheng, Z M; Xing, D Y

    2004-01-01

    Taking simultaneously into account the electron-injected current from one normal-metal (N) electrode and the hole-injected current from the other N electrode, we study the coherent tunnelling conductance and quantum interference effects in N/d-wave superconductor (S)/N double tunnel junctions. It is found that oscillations of all quasiparticle transport coefficients and the conductance spectrum with quasiparticle energy and thickness of the d-wave S depend to a great extent on the crystal orientation of the d-wave S. The zero-bias conductance peak is gradually lowered with increasing barrier strength and/or temperature, its magnitude exhibiting damped oscillatory behaviour with thickness of S

  2. A normal metal tunnel-junction heat diode

    Energy Technology Data Exchange (ETDEWEB)

    Fornieri, Antonio, E-mail: antonio.fornieri@sns.it; Martínez-Pérez, María José; Giazotto, Francesco, E-mail: giazotto@sns.it [NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, I-56127 Pisa (Italy)

    2014-05-05

    We propose a low-temperature thermal rectifier consisting of a chain of three tunnel-coupled normal metal electrodes. We show that a large heat rectification is achievable if the thermal symmetry of the structure is broken and the central island can release energy to the phonon bath. The performance of the device is theoretically analyzed and, under the appropriate conditions, temperature differences up to ∼200 mK between the forward and reverse thermal bias configurations are obtained below 1 K, corresponding to a rectification ratio R∼2000. The simplicity intrinsic to its design joined with the insensitivity to magnetic fields make our device potentially attractive as a fundamental building block in solid-state thermal nanocircuits and in general-purpose cryogenic electronic applications requiring energy management.

  3. Tunneling Conductance in Ferromagnetic Metal/Normal Metal/Spin-Singlet -Wave Ferromagnetic Superconductor Junctions

    Directory of Open Access Journals (Sweden)

    Hamidreza Emamipour

    2013-01-01

    Full Text Available In the framework of scattering theory, we study the tunneling conductance in a system including two junctions, ferromagnetic metal/normal metal/ferromagnetic superconductor, where ferromagnetic superconductor is in spin-singlet -wave pairing state. The non-magnetic normal metal is placed in the intermediate layer with the thickness ( which varies from 1 nm to 10000 nm. The interesting result which we have found is the existence of oscillations in conductance curves. The period of oscillations is independent of FS and FN exchange field while it depends on . The obtained results can serve as a useful tool to determine the kind of pairing symmetry in ferromagnetic superconductors.

  4. Tunneling Conductance in Two-Dimensional Junctions between a Normal Metal and a Ferromagnetic Rashba Metal

    Science.gov (United States)

    Oshima, Daisuke; Taguchi, Katsuhisa; Tanaka, Yukio

    2018-03-01

    We have studied charge transport in a ferromagnetic Rashba metal (FRM), where both Rashba type spin-orbit coupling (RSOC) and exchange coupling coexist. It has nontrivial metallic states, i.e., a normal Rashba metal (NRM), anomalous Rashba metal (ARM), and Rashba ring metal (RRM), and they are manipulated by tuning the Fermi level with an applied gate voltage. We theoretically studied the tunneling conductance (G) in a normal metal/FRM junction by changing the Fermi level via an applied gate voltage (Vg) on the FRM. We found a wide variation in the Vg dependence of G, which depends on the metallic states. In an NRM, the Vg dependence of G is the same as that in a conventional two-dimensional system. However, in an ARM, the Vg dependence of G is similar to that in a conventional one- (two-)dimensional system for a large (small) RSOC. Furthermore, in an RRM, which is generated by a large RSOC, the Vg dependence of G is similar to that in the one-dimensional system. In addition, these anomalous properties stem from the density of states in the ARM and RRM caused by the large RSOC and exchange coupling rather than the spin-momentum locking of RSOC.

  5. Theory of the low-voltage impedance of superconductor-- p insulator--normal metal tunnel junctions

    International Nuclear Information System (INIS)

    Lemberger, T.R.

    1984-01-01

    A theory for the low-voltage impedance of a superconductor-- p insulator--normal metal tunnel junction is developed that includes the effects of charge imbalance and of quasiparticle fluctuations. A novel, inelastic, charge-imbalance relaxation process is identified that is associated with the junction itself. This new process leads to the surprising result that the charge-imbalance component of the dc resistance of a junction becomes independent of the electron-phonon scattering rate as the insulator resistance decreases

  6. Limitations in cooling electrons using normal-metal-superconductor tunnel junctions.

    Science.gov (United States)

    Pekola, J P; Heikkilä, T T; Savin, A M; Flyktman, J T; Giazotto, F; Hekking, F W J

    2004-02-06

    We demonstrate both theoretically and experimentally two limiting factors in cooling electrons using biased tunnel junctions to extract heat from a normal metal into a superconductor. First, when the injection rate of electrons exceeds the internal relaxation rate in the metal to be cooled, the electrons do not obey the Fermi-Dirac distribution, and the concept of temperature cannot be applied as such. Second, at low bath temperatures, states within the gap induce anomalous heating and yield a theoretical limit of the achievable minimum temperature.

  7. Manifestly non-Gaussian fluctuations in superconductor-normal metal tunnel nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Laakso, Matti [Institut fuer Theorie der Statistischen Physik, RWTH Aachen University, Aachen (Germany); Low Temperature Laboratory, Aalto University, Espoo (Finland); Heikkilae, Tero [Low Temperature Laboratory, Aalto University, Espoo (Finland); Nazarov, Yuli [Kavli Institute of Nanoscience, Delft University of Technology, Delft (Netherlands)

    2013-07-01

    Recently, temperature fluctuation statistics has been studied in non-interacting islands and overheated single-electron transistors. We propose a mesoscopic setup which exhibits strong and manifestly non-Gaussian fluctuations of energy and temperature when suitably driven out of equilibrium. The setup consists of a normal metal island (N) coupled by tunnel junctions (I) to two superconducting leads (S), forming a SINIS structure, and is biased near the threshold voltage for quasiparticle tunneling, eV ∼ 2Δ. The fluctuations can be measured by monitoring the time-dependent electric current through the system, which makes the setup suitable for the realization of feedback schemes which allow to stabilize the temperature to the desired value.

  8. Asymmetry in the normal-metal to high-Tc superconductor tunnel junction

    International Nuclear Information System (INIS)

    Flensberg, K.; Hedegaard, P.; Brix, M.

    1988-01-01

    We show that the observed asymmetry in the I-V characteristics of high-T c material to normal metal junctions can be explained within the Resonating-Valence-Bond model. For a bias current with electrons moving from the superconductor to the normal metal the current is quadratic in the bias voltage, and in the opposite case with electrons moving from the normal metal to the superconductor the current is linear in V. (orig.)

  9. Systematic study on the tunneling conductance in a normal-metal/px+y ± ipy-x-wave superconductor junction

    International Nuclear Information System (INIS)

    Jin Biao; Zhang Yinhan; Cheng Qiang

    2010-01-01

    The chiral p x+y ± ip y-x -wave state is currently considered to be a promising candidate state for Sr 2 RuO 4 in the light of microscopic theories. We theoretically investigate the tunneling conductance in a normal-metal/p x+y ± ip y-x -wave superconductor junction over a wide range of temperature and barrier strength. For a cylindrical Fermi surface with the magnitude of the radius R, the p x+y ± ip y-x -wave gap function exhibits two typical types of nodal structures when R = 1.0 and R=1/√2, respectively. It is found, in particular, that the line shapes of the conductance spectra for R∼1/√2 cases can qualitatively account for the existing in-plane tunneling experiments on Sr 2 RuO 4 .

  10. Proximity electron tunneling study of superconductivity in transition metals and as induced in a normal metal, Mg

    International Nuclear Information System (INIS)

    Burnell, D.M.

    1982-01-01

    Conventional Nb tunneling junction have been fabricated by completely oxidizing a 10-15 Angstrom layer of deposited Al avoiding thermal oxidation of the Nb. Comparison of the resulting conventional Nb pair potential and Eliashberg spectral function, α 2 F(omega), with those of proximity (PETS) analyses shows excellent agreement confirming the appropriateness and accuracy of the PETS analytic procedure. The PET methodology is further adapted to proximity systems employing Mg as the N-layer backed by Nb and Ta foils S. A detailed study of C-MgO/sub x/-MgNb systems for Mg thicknesses ranging from 25 Angstrom to 1100 Angstrom and C-MgO/sub x/-MgTa systems over a narrower thickness range shows anomalous thickness dependence for the junction conductance resulting from an increased scattering presence over that seen in Al Nb systems. As a result the Nb phonon contributions are completely damped for Mg thicknesses greater than 400 Angstrom, allowing unimpeded determination of the Mg α 2 F(omega). The resulting Eliashberg spectral function reveals the electron-phonon coupling, α 2 (omega), to be greatly reduced for transverse phonon frequencies relative to its longitudinal phonon value. In preface to the presentation of these studies, a detailed summary of the underlying theory and description of the experimental techniques and analytic methods are presented

  11. Tunneling junction as an open system. Normal tunneling

    International Nuclear Information System (INIS)

    Ono, Y.

    1978-01-01

    The method of the tunneling Hamiltonian is reformulated in the case of normal tunneling by introducing two independent particle baths. Due to the baths, it becomes possible to realize a final stationary state where the electron numbers of the two electrodes in the tunneling system are maintained constant and where there exists a stationary current. The effect of the bath-system couplings on the current-voltage characteristics of the junction is discussed in relation to the usual expression of the current as a function of voltage. (Auth.)

  12. Theory of normal metals

    International Nuclear Information System (INIS)

    Mahan, G.D.

    1992-01-01

    The organizers requested that I give eight lectures on the theory of normal metals, ''with an eye on superconductivity.'' My job was to cover the general properties of metals. The topics were selected according to what the students would need to known for the following lectures on superconductivity. My role was to prepare the ground work for the later lectures. The problem is that there is not yet a widely accepted theory for the mechanism which pairs the electrons. Many mechanisms have been proposed, with those of phonons and spin fluctuations having the most followers. So I tried to discuss both topics. I also introduced the tight-binding model for metals, which forms the basis for most of the work on the cuprate superconductors

  13. Tunneling from super- to normal-deformed minima in nuclei

    International Nuclear Information System (INIS)

    Khoo, T. L.

    1998-01-01

    An excited minimum, or false vacuum, gives rise to a highly elongated superdeformed (SD) nucleus. A brief review of superdeformation is given, with emphasis on the tunneling from the false to the true vacuum, which occurs in the feeding and decay of SD bands. During the feeding process the tunneling is between hot states, while in the decay it is from a cold to a hot state. The γ spectra connecting SD and normal-deformed (ND) states provide information on several physics issues: the decay mechanism; the spin/parity quantum numbers, energies and microscopic structures of SD bands; the origin of identical SD bands; the quenching of pairing with excitation energy; and the chaoticity of excited ND states at 2.5-5 MeV. Other examples of tunneling in nuclei, which are briefly described, include the possible role of tunneling in ΔI = 4 bifurcation in SD bands, sub-barrier fusion and proton emitters

  14. Tunneling from super- to normal-deformed minima in nuclei.

    Energy Technology Data Exchange (ETDEWEB)

    Khoo, T. L.

    1998-01-08

    An excited minimum, or false vacuum, gives rise to a highly elongated superdeformed (SD) nucleus. A brief review of superdeformation is given, with emphasis on the tunneling from the false to the true vacuum, which occurs in the feeding and decay of SD bands. During the feeding process the tunneling is between hot states, while in the decay it is from a cold to a hot state. The {gamma} spectra connecting SD and normal-deformed (ND) states provide information on several physics issues: the decay mechanism; the spin/parity quantum numbers, energies and microscopic structures of SD bands; the origin of identical SD bands; the quenching of pairing with excitation energy; and the chaoticity of excited ND states at 2.5-5 MeV. Other examples of tunneling in nuclei, which are briefly described, include the possible role of tunneling in {Delta}I = 4 bifurcation in SD bands, sub-barrier fusion and proton emitters.

  15. Spin-filter effect in normal metal/ferromagnetic insulator/normal metal/superconductor structures

    International Nuclear Information System (INIS)

    Li, Hong; Yang, Wei; Yang, Xinjian; Qin, Minghui; Guo, Jianqin

    2007-01-01

    Taking into account the thickness of the ferromagnetic insulator, the spin-filter effect in normal metal/ferromagnetic insulator/normal metal/superconductor (NM/FI/NM/SC) junctions is studied based on the Blonder-Tinkham-Klapwijk (BTK) theory. It is shown that a spin-dependent energy shift during the tunneling process induces splitting of the subgap resonance peaks. The spin polarization due to the spin-filter effect of the FI causes an imbalance of the peaks heights and can enhance the Zeeman splitting of the gap peaks caused by an applied magnetic field. The spin-filter effect has no contribution to the proximity-effect-induced superconductivity in NM interlayer

  16. Current correlations in superconductor - normal metal mesoscopic structures

    International Nuclear Information System (INIS)

    Bignon, Guillaume

    2005-01-01

    Thanks to the experimental progress in miniaturization and cryogenics over the last twenty years, it is now possible to build sufficiently small electric circuits where the wave like nature of electron becomes significant. In such electric circuit transport properties like current and noise are modified. It corresponds to the mesoscopic scale. Moreover, connecting a mesoscopic circuit to a superconductor enhances the effects due to interference between electrons since a superconductor is a macroscopic source of coherent electrons pairs: the Cooper pairs. In this thesis, we study current correlations in mesoscopic normal metal - superconductor structures. First, the energy dependence of current noise in a normal metal - superconductor tunnel junction is analysed taking into account weak disorder and interactions. We show that if the normal metal is out of equilibrium, current and noise become independent. Next, we consider the case of a superconductor connected to two normal metals by tunnel junctions. We show that it is possible to change the sign of current crossed correlation by tuning the voltages and that it can be used to probe the size of the Cooper pairs. Lastly, using Usadel's quasi-classic theory, we study the energy dependence of noise in a normal metal - normal metal - superconductor double junction. We show that barrier's transparencies modifies significantly both current and noise. (author) [fr

  17. Spin-filtering effect and proximity effect in normal metal/ferromagnetic insulator/normal metal/superconductor junctions

    International Nuclear Information System (INIS)

    Li Hong; Yang Wei; Yang Xinjian; Qin Minghui; Xu Yihong

    2007-01-01

    Taking into account the thickness of the ferromagnetic insulator (FI), the spin-filtering effect and proximity effect in normal metal/ferromagnetic insulator/normal metal/superconductor (NM/FI/NM/SC) junctions are studied based on an extended Blonder-Tinkham-Klapwijk (BTK) theory. It is shown that a spin-dependent energy shift during the tunneling process induces splitting of the sub-energy gap conductance peaks and the spin polarization in the ferromagnetic insulator causes an imbalance of the peak heights. Different from the ferromagnet the spin-filtering effect of the FI cannot cause the reversion of the normalized conductance in NM/FI/NM/SC junctions

  18. Studies of proximity-effect and tunneling in YBCO/metal layered films

    Energy Technology Data Exchange (ETDEWEB)

    Greene, L.H.; Barner, J.B.; Feldmann, W.L.; Farrow, L.A.; Miceli, P.F.; Ramesh, R.; Wilkens, B.J.; Bagley, B.G.; Tarascon, J.M.; Wernick, J.H. (Bellcore, Red Bank, NJ (USA)); Giroud, M. (CRTBT-CNRS, Grenoble (France)); Rowell, J.M. (Conductus, Sunnyvale, CA (USA))

    1989-12-01

    The short coherence length of the high-Tc superconductors, coupled with their tendency to form non-superconducting surface layers, accounts for the difficulty in achieving good tunnel junctions. A proximity layer of a longer coherence length normal metal (N) is expected to ''draw out'' Cooper pairs. Our goal is to fabricate reproducible, planar tunnel junctions of SNIS layered structures for proximity tunneling spectroscopy. Such structures of YBCO/N/I/Pb and SNS structures of YBCO/N/Pb indicate that the normal metal produces a low resistance contact to the YBCO surface with a supercurrent observed in the SNS. The insulating barrier in the SNIS is reproducible, insulating and continuous: A sharp Pb gap and phonons from the counter-electrode are routinely observed. (orig.).

  19. Studies of proximity-effect and tunneling in YBCO/metal layered films

    International Nuclear Information System (INIS)

    Greene, L.H.; Barner, J.B.; Feldmann, W.L.; Farrow, L.A.; Miceli, P.F.; Ramesh, R.; Wilkens, B.J.; Bagley, B.G.; Tarascon, J.M.; Wernick, J.H.; Giroud, M.; Rowell, J.M.

    1989-01-01

    The short coherence length of the high-T c superconductors, coupled with their tendency to form non-superconducting surface layers, accounts for the difficulty in achieving good tunnel junctions. A proximity layer of a longer coherence length normal metal (N) is expected to draw out Cooper pairs. The authors' goal is to fabricate reproducible, planar tunnel junctions of SNIS layered structures for proximity tunneling spectroscopy. They discuss how such structures of YBCO/N/I/Pb and SNS structures of YBCO/N/Pb indicate that the normal metal produces a low resistance contact to the YBCO surface with a supercurrent observed in the SNS. The insulating barrier in the SNIS is reproducible, insulating and continuous: A sharp Pb gap and phonons from the counter-electrode are routinely observed

  20. Interaction between electrons and tunneling levels in metallic glasses

    International Nuclear Information System (INIS)

    Black, J.L.; Gyorffy, B.L.

    1978-01-01

    A simple model in which the conduction electrons of a metallic glass experience a local time-dependent potential due to two-level tunneling states is considered. The model exhibits interesting divergent behavior which is quite different from that predicted by an earlier ''s-d Kondo'' model

  1. Electromigration of single metal atoms observed by scanning tunneling microscopy

    NARCIS (Netherlands)

    Braun, K.-F.; Soe, W.H.; Flipse, C.F.J.

    2007-01-01

    The authors show in this letter that single metal atoms on a Ni(111) surface can be pushed by electromigration forces from a scanning tunneling microscope tip. This repulsive interaction is obsd. over a length scale of 6 nm. While for voltages above -300 mV the atoms are pulled by the microscope

  2. Fabrication of metallic nanowires with a scanning tunnelling microscope

    NARCIS (Netherlands)

    Kramer, N.; Kramer, N.; Birk, H.; Jorritsma, J.; Schönenberger, C.

    1995-01-01

    A procedure to pattern thin metal films on a nanometer scale with a scanning tunneling microscope (STM) operating in air is reported. A 30 nm film of hydrogenated amorphous silicon (a‐Si:H) is deposited on a 10 nm film of TaIr. Applying a negative voltage between the STM tip and the a‐Si:H film

  3. Nonlinear transport theory in the metal with tunnel barrier

    Science.gov (United States)

    Zubov, E. E.

    2018-02-01

    Within the framework of the scattering matrix formalism, the nonlinear Kubo theory for electron transport in the metal with a tunnel barrier has been considered. A general expression for the mean electrical current was obtained. It significantly simplifies the calculation of nonlinear contributions to the conductivity of various hybrid structures. In the model of the tunnel Hamiltonian, all linear and nonlinear contributions to a mean electrical current are evaluated. The linear approximation agrees with results of other theories. For effective barrier transmission ?, the ballistic transport is realised with a value of the Landauer conductivity equal to ?.

  4. Theory of charge transport in diffusive normal metal conventional superconductor point contacts

    NARCIS (Netherlands)

    Tanaka, Y.; Golubov, Alexandre Avraamovitch; Kashiwaya, S.

    2003-01-01

    Tunneling conductance in diffusive normal (DN) metal/insulator/s-wave superconductor junctions is calculated for various situations by changing the magnitudes of the resistance and Thouless energy in DN and the transparency of the insulating barrier. The generalized boundary condition introduced by

  5. Thin films of metal oxides on metal single crystals: Structure and growth by scanning tunneling microscopy

    International Nuclear Information System (INIS)

    Galloway, H.C.

    1995-12-01

    Detailed studies of the growth and structure of thin films of metal oxides grown on metal single crystal surfaces using Scanning Tunneling Microscopy (STM) are presented. The oxide overlayer systems studied are iron oxide and titanium oxide on the Pt(III) surface. The complexity of the metal oxides and large lattice mismatches often lead to surface structures with large unit cells. These are particularly suited to a local real space technique such as scanning tunneling microscopy. In particular, the symmetry that is directly observed with the STM elucidates the relationship of the oxide overlayers to the substrate as well as distinguishing, the structures of different oxides

  6. Normal-metal quasiparticle traps for superconducting qubits

    Energy Technology Data Exchange (ETDEWEB)

    Hosseinkhani, Amin [Peter Grunberg Institute (PGI-2), Forschungszentrum Julich, D-52425 Julich (Germany); JARA-Institute for Quantum Information, RWTH Aachen University, D-52056 Aachen (Germany)

    2016-07-01

    Superconducting qubits are promising candidates to implement quantum computation, and have been a subject of intensive research in the past decade. Excitations of a superconductor, known as quasiparticles, can reduce the qubit performance by causing relaxation; the relaxation rate is proportional to the density of quasiparticles tunneling through Josephson junction. Here, we consider engineering quasiparticle traps by covering parts of a superconducting device with normal-metal islands. We utilize a phenomenological quasiparticle diffusion model to study both the decay rate of excess quasiparticles and the steady-state profile of the quasiparticle density in the device. We apply the model to various realistic configurations to explore the role of geometry and location of the traps.

  7. Proximity-effect and tunneling in YBa2Cu3O7/metal layered structures

    International Nuclear Information System (INIS)

    Greene, L.H.; Feldmann, W.L.; Barner, J.B.; Farrow, L.A.; Miceli, P.F.; Ramesh, R.; Wilkens, B.J.; Bagley, B.G.; Giroud, M.; Rowell, J.M.

    1990-01-01

    Superconducting thin films of YBa 2 Cu 3 O 7 are prepared in-situ by on-axis sputter deposition from a single, composite target. The planar magnetron target composition of YBa:Cu = 1.08:1.76:4.5 sputtered onto MgO at T ∼ 750 degrees C in a 600 mTorr Ar-O 2 atmosphere yields reproducible superconducting films having T c (R = 0) > 80 K and stoichiometry 1:2:3, that are shiny and of near epitaxial crystalline quality. In order to ensure clean interfaces, YBa 2 Cu 3 O 7 /normal metal bilayers (to form SNS' Josephson junctions) and YBa 2 Cu 3 O 7 /normal metal/insulating barrier trilayers (to form SNIS' proximity tunnel junctions) are grown completely in-situ. (The S' = Pb counter electrode is evaporated ex-situ.) A supercurrent and Shapiro steps are observed in microwave irradiated SNS' (N = Ag) small area (5 x 10 -5 cm 2 junctions. In SNIS' tunnel junctions, high-quality Pb tunnelling is observed

  8. Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition

    Directory of Open Access Journals (Sweden)

    Golnaz Karbasian

    2017-03-01

    Full Text Available Single electron transistors are nanoscale electron devices that require thin, high-quality tunnel barriers to operate and have potential applications in sensing, metrology and beyond-CMOS computing schemes. Given that atomic layer deposition is used to form CMOS gate stacks with low trap densities and excellent thickness control, it is well-suited as a technique to form a variety of tunnel barriers. This work is a review of our recent research on atomic layer deposition and post-fabrication treatments to fabricate metallic single electron transistors with a variety of metals and dielectrics.

  9. Quantum transport in graphene normal-metal superconductor- normal-metal structures

    Directory of Open Access Journals (Sweden)

    H. Mohammadpour

    2008-06-01

    Full Text Available  We study the transport of electrons in a graphene NSN structure in which two normal regions are connected by a superconducting strip of thickness d. Within Dirac-Bogoliubov-de Gennes equations we describe the transmission through the contact in terms of different scattering processes consisting of quasiparticle cotunneling, local and crossed Andreev reflections. Compared to a fully normal structure we show that the angular dependence of the transmission probability is significantly modified by the presence of superconducting correlations. This modifation can be explained in terms of the interplay between Andreev reflection and Klein tunneling of chiral quasiparticles. We further analyze the energy dependence of the resulting differential conductance of the structure. The subgap differential conductance shows features of Andreev reflection and cotunelling processes, which tends to the values of an NS structure for large ds. Above the gap, the differential conductance shows an oscillatory behavior with energy even at very large ds.

  10. Electron Tunneling in Junctions Doped with Semiconductors and Metals.

    Science.gov (United States)

    Bell, Lloyd Douglas, II

    In this study, tunnel junctions incorporating thin layers of semiconductors and metals have been analyzed. Inelastic electron tunneling spectroscopy (IETS) was employed to yield high-resolution vibrational spectra of surface species deposited at the oxide-M_2 interface of M_1-M_1O _{rm x}-M _2 tunneling samples. Analysis was also performed on the elastic component of the tunneling current, yielding information on the tunnel barrier shape. The samples in this research exhibit a wide range of behavior. The IETS for Si, SiO_2, and Ge doped samples show direct evidence of SiH _{rm x} and GeH_ {rm x} formation. The particular species formed is shown to depend on the form of the evaporated dopant. Samples were also made with organic dopants deposited over the evaporated dopants. Many such samples show marked effects of the evaporated dopants on the inelastic peak intensities of the organic dopants. These alterations are correlated with the changed reactivity of the oxide surface coupled with a change in the OH dipole layer density on the oxide. Thicker organic dopant layers cause large changes in the elastic tunneling barrier due to OH layer alterations or the low barrier attributes of the evaporated dopant. In the cases of the thicker layers an extra current-carrying mechanism is shown to be contributing. Electron ejection from charge traps is proposed as an explanation for this extra current. The trend of barrier shape with dopant thickness is examined. Many of these dopants also produce a voltage-induced shift in the barrier shape which is stable at low temperature but relaxes at high temperature. This effect is similar to that produced by certain organic dopants and is explained by metastable bond formation between the surface OH and dopant. Other dopants, such as Al, Mg, and Fe, produce different effects. These dopants cause large I-V nonlinearity at low voltages. This nonlinearity is modeled as a giant zero-bias anomaly (ZBA) and fits are presented which show good

  11. Tunneling conductance oscillations in spin-orbit coupled metal-insulator-superconductor junctions

    Science.gov (United States)

    Kapri, Priyadarshini; Basu, Saurabh

    2018-01-01

    The tunneling conductance for a device consisting of a metal-insulator-superconductor (MIS) junction is studied in presence of Rashba spin-orbit coupling (RSOC) via an extended Blonder-Tinkham-Klapwijk formalism. We find that the tunneling conductance as a function of an effective barrier potential that defines the insulating layer and lies intermediate to the metallic and superconducting electrodes, displays an oscillatory behavior. The tunneling conductance shows high sensitivity to the RSOC for certain ranges of this potential, while it is insensitive to the RSOC for others. Additionally, when the period of oscillations is an odd multiple of a certain value of the effective potential, the conductance spectrum as a function of the biasing energy demonstrates a contrasting trend with RSOC, compared to when it is not an odd multiple. The explanations for the observation can be found in terms of a competition between the normal and Andreev reflections. Similar oscillatory behavior of the conductance spectrum is also seen for other superconducting pairing symmetries, thereby emphasizing that the insulating layer plays a decisive role in the conductance oscillations of a MIS junction. For a tunable Rashba coupling, the current flowing through the junction can be controlled with precision.

  12. Quasiparticle transport properties of mesoscopic wires containing normal-metal/superconductor/normal-metal proximity junctions

    International Nuclear Information System (INIS)

    Kim, Nam; Kim, Kijoon; Lee, Hu Jong; Lee, Seongjae; Yuk, Jong Seol; Park, Kyoung Wan; Lee, El Hang

    1997-01-01

    We measured the differential resistance dV/dI of mesoscopic normal-metal/superconductor/normal-metal (N-S-N) junctions. At low temperatures (T PbIn /e, where Δ PbIn is the gap energy of superconducting Pb-In, and at a higher bias V c . The zero-bias dip is supposed to originate from Andreev reflections of quasiparticles and the peak near 2Δ PbIn /e from the formation of a standing-wave mode of quasiparticles inside the superconducting potential barrier. We attribute the peaks at V c to a transition of the superconducting region to the normal state as the current exceeds the critical current I c of S

  13. Step tunneling enhanced asymmetry in metal-insulator-insulator-metal (MIIM) diodes for rectenna applications

    Science.gov (United States)

    Alimardani, N.; Conley, J. F.

    2013-09-01

    We combine nanolaminate bilayer insulator tunnel barriers (Al2O3/HfO2, HfO2/Al2O3, Al2O3/ZrO2) deposited via atomic layer deposition (ALD) with asymmetric work function metal electrodes to produce MIIM diodes with enhanced I-V asymmetry and non-linearity. We show that the improvements in MIIM devices are due to step tunneling rather than resonant tunneling. We also investigate conduction processes as a function of temperature in MIM devices with Nb2O5 and Ta2O5 high electron affinity insulators. For both Nb2O5 and Ta2O5 insulators, the dominant conduction process is established as Schottky emission at small biases and Frenkel-Poole emission at large biases. The energy depth of the traps that dominate Frenkel-Poole emission in each material are estimated.

  14. Rectified tunneling current response of bio-functionalized metal-bridge-metal junctions.

    Science.gov (United States)

    Liu, Yaqing; Offenhäusser, Andreas; Mayer, Dirk

    2010-01-15

    Biomolecular bridged nanostructures allow direct electrical addressing of electroactive biomolecules, which is of interest for the development of bioelectronic and biosensing hybrid junctions. In the present paper, the electroactive biomolecule microperoxidase-11 (MP-11) was integrated into metal-bridge-metal (MBM) junctions assembled from a scanning tunneling microscope (STM) setup. Before immobilization of MP-11, the Au working electrode was first modified by a self-assembled monolayer of 1-undecanethiol (UDT). A symmetric and potential independent response of current-bias voltage (I(t)/V(b)) was observed for the Au (substrate)/UDT/Au (tip) junction. However, the I(t)/V(b) characteristics became potential dependent and asymmetrical after binding of MP-11 between the electrodes of the junction. The rectification ratio of the asymmetric current response varies with gate electrode modulation. A resonant tunneling process between metal electrode and MP-11 enhances the tunneling current and is responsible for the observed rectification. Our investigations demonstrated that functional building blocks of proteins can be reassembled into new conceptual devices with operation modes deviating from their native function, which could prove highly useful in the design of future biosensors and bioelectronic devices. Copyright 2009 Elsevier B.V. All rights reserved.

  15. Spin-dependent transport in metal/semiconductor tunnel junctions

    NARCIS (Netherlands)

    Prins, M.W.J.; Kempen, van H.; Leuken, Van H.; Groot, de R.A.; Roy, van W.; De Boeck, J.

    1995-01-01

    This paper describes a model as well as experiments on spin-polarized tunnelling with the aid of optical spin orientation. This involves tunnel junctions between a magnetic material and gallium arsenide (GaAs), where the latter is optically excited with circularly polarized light in order to

  16. Normal-state conductance used to probe superconducting tunnel junctions for quantum computing

    Energy Technology Data Exchange (ETDEWEB)

    Chaparro, Carlos; Bavier, Richard; Kim, Yong-Seung; Kim, Eunyoung; Oh, Seongshik [Department of Physics and Astronomy, Rutgers, The State University of New Jersey, Piscataway, NJ 08854 (United States); Kline, Jeffrey S; Pappas, David P, E-mail: carlosch@physics.rutgers.ed, E-mail: ohsean@physics.rutgers.ed [National Institute of Standards and Technology, Boulder, CO 80305 (United States)

    2010-04-15

    Here we report normal-state conductance measurements of three different types of superconducting tunnel junctions that are being used or proposed for quantum computing applications: p-Al/a-AlO/p-Al, e-Re/e-AlO/p-Al, and e-V/e-MgO/p-V, where p stands for polycrystalline, e for epitaxial, and a for amorphous. All three junctions exhibited significant deviations from the parabolic behavior predicted by the WKB approximation models. In the p-Al/a-AlO/p-Al junction, we observed enhancement of tunneling conductances at voltages matching harmonics of Al-O stretching modes. On the other hand, such Al-O vibration modes were missing in the epitaxial e-Re/e-AlO/p-Al junction. This suggests that absence or existence of the Al-O stretching mode might be related to the crystallinity of the AlO tunnel barrier and the interface between the electrode and the barrier. In the e-V/e-MgO/p-V junction, which is one of the candidate systems for future superconducting qubits, we observed suppression of the density of states at zero bias. This implies that the interface is electronically disordered, presumably due to oxidation of the vanadium surface underneath the MgO barrier, even if the interface was structurally well ordered, suggesting that the e-V/e-MgO/p-V junction will not be suitable for qubit applications in its present form. This also demonstrates that the normal-state conductance measurement can be effectively used to screen out low quality samples in the search for better superconducting tunnel junctions.

  17. Electrochemistry at a Metal Nanoparticle on a Tunneling Film: A Steady-State Model of Current Densities at a Tunneling Ultramicroelectrode.

    Science.gov (United States)

    Hill, Caleb M; Kim, Jiyeon; Bard, Allen J

    2015-09-09

    Here, a new methodology is proposed for treating electrochemical current densities in metal-insulator-metal nanoparticle (M-I-MNP) systems. The described model provides broad, practical insights about MNP-mediated electron transfer to redox species in solution, where electron transfer from the underlying electrode to a MNP via tunneling and heterogeneous electron transfer from the MNP to redox species in solution are treated as sequential steps. Tunneling is treated through an adaptation of the Simmons model of tunneling in metal-insulator-metal structures, and explicit equations are provided for tunneling currents, which demonstrate the effect of various experimental parameters, such as insulator thickness and MNP size. Overall, a general approach is demonstrated for determining experimental conditions where tunneling will have a measurable impact on the electrochemistry of M-I-MNP systems.

  18. Flux sensitivity of a piecewise normal and superconducting metal loop

    International Nuclear Information System (INIS)

    Buettiker, M.; Klapwijk, T.M.

    1986-01-01

    We consider a loop composed of a superconducting segment and a normal segment with an Aharonov-Bohm flux through the hole of the loop. The normal segment is assumed to be long compared to the superconducting coherence length xi but short compared to a mean inelastic diffusion length. The elementary excitation spectrum of the ground state of this loop is periodic with period hc/2e as long as the superconducting segment is larger than xi. If the superconducting segment length becomes of the order of xi, quasiparticles can tunnel through the superconducting gap and give rise to an excitation spectrum which is periodic with period hc/e. .AE

  19. Controlled modification of resonant tunneling in metal-insulator-insulator-metal structures

    Science.gov (United States)

    Mitrovic, I. Z.; Weerakkody, A. D.; Sedghi, N.; Ralph, J. F.; Hall, S.; Dhanak, V. R.; Luo, Z.; Beeby, S.

    2018-01-01

    We present comprehensive experimental and theoretical work on tunnel-barrier rectifiers comprising bilayer (Nb2O5/Al2O3) insulator configurations with similar (Nb/Nb) and dissimilar (Nb/Ag) metal electrodes. The electron affinity, valence band offset, and metal work function were ascertained by X-ray photoelectron spectroscopy, variable angle spectroscopic ellipsometry, and electrical measurements on fabricated reference structures. The experimental band line-up parameters were fed into a theoretical model to predict available bound states in the Nb2O5/Al2O3 quantum well and generate tunneling probability and transmittance curves under applied bias. The onset of strong resonance in the sub-V regime was found to be controlled by a work function difference of Nb/Ag electrodes in agreement with the experimental band alignment and theoretical model. A superior low-bias asymmetry of 35 at 0.1 V and a responsivity of 5 A/W at 0.25 V were observed for the Nb/4 nm Nb2O5/1 nm Al2O3/Ag structure, sufficient to achieve a rectification of over 90% of the input alternate current terahertz signal in a rectenna device.

  20. The electronic structure of normal metal-superconductor bilayers

    Energy Technology Data Exchange (ETDEWEB)

    Halterman, Klaus; Elson, J Merle [Sensor and Signal Sciences Division, Naval Air Warfare Center, China Lake, CA 93355 (United States)

    2003-09-03

    We study the electronic properties of ballistic thin normal metal-bulk superconductor heterojunctions by solving the Bogoliubov-de Gennes equations in the quasiclassical and microscopic 'exact' regimes. In particular, the significance of the proximity effect is examined through a series of self-consistent calculations of the space-dependent pair potential {delta}(r). It is found that self-consistency cannot be neglected for normal metal layer widths smaller than the superconducting coherence length {xi}{sub 0}, revealing its importance through discernible features in the subgap density of states. Furthermore, the exact self-consistent treatment yields a proximity-induced gap in the normal metal spectrum, which vanishes monotonically when the normal metal length exceeds {xi}{sub 0}. Through a careful analysis of the excitation spectra, we find that quasiparticle trajectories with wavevectors oriented mainly along the interface play a critical role in the destruction of the energy gap.

  1. Similarities between normal- and super-currents in topological insulator magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Soodchomshom, Bumned; Chantngarm, Peerasak

    2010-01-01

    This work compares the normal-current in a NM/Fi/NM junction with the super-current in a SC/Fi/SC junction, where both are topological insulator systems. NM and Fi are normal region and ferromagnetic region of thickness d with exchange energy m playing a role of the mass of the Dirac electrons and with the gate voltage V G , respectively. SC is superconducting region induced by a s-wave superconductor. We show that, interestingly, the critical super-current passing through a SC/Fi/SC junction behaves quite similar to the normal-current passing through a NM/Fi/NM junction. The normal-current and super-current exhibit N-peak oscillation, found when currents are plotted as a function of the magnetic barrier strength χ ∼ md/hv F . With the barrier strength Z ∼ V G d/hv F , the number of peaks N is determined through the relation Z ∼ Nπ + σπ (with 0 < σ≤1 for χ < Z). The normal- and the super-currents also exhibit oscillating with the same height for all of peaks, corresponding to the Dirac fermion tunneling behavior. These anomalous oscillating currents due to the interplay between gate voltage and magnetic field in the barrier were not found in graphene-based NM/Fi/NM and SC/Fi/SC junctions. This is due to the different magnetic effect between the Dirac fermions in topological insulator and graphene.

  2. Topological superconductivity in metallic nanowires fabricated with a scanning tunneling microscope

    International Nuclear Information System (INIS)

    Rodrigo, J G; Crespo, V; Suderow, H; Vieira, S; Guinea, F

    2013-01-01

    We report on several low-temperature experiments supporting the presence of Majorana fermions in superconducting lead nanowires fabricated with a scanning tunneling microscope (STM). These nanowires are the connecting bridges between the STM tip and the sample resulting from indentation–retraction processes. We show here that by a controlled tuning of the nanowire region, in which superconductivity is confined by applied magnetic fields, the conductance curves obtained in these situations are indicative of topological superconductivity and Majorana fermions. The most prominent feature of this behavior is the emergence of a zero bias peak in the conductance curves, superimposed on a background characteristic of the conductance between a normal metal and a superconductor in the Andreev regime. The zero bias peak emerges in some nanowires when a magnetic field larger than the lead bulk critical field is applied. This field drives one of the electrodes into the normal state while the other, the tip, remains superconducting on its apex. Meanwhile a topological superconducting state appears in the connecting nanowire of nanometric size. (paper)

  3. Superconducting proximity effect in mesoscopic superconductor/normal-metal junctions

    CERN Document Server

    Takayanagi, H; Toyoda, E

    1999-01-01

    The superconducting proximity effect is discussed in mesoscopic superconductor/normal-metal junctions. The newly-developed theory shows long-range phase-coherent effect which explaines early experimental results of giant magnetoresistance oscillations in an Andreev interferometer. The theory also shows that the proximity correction to the conductance (PCC) has a reentrant behavior as a function of energy. The reentrant behavior is systematically studied in a gated superconductor-semiconductor junction. A negative PCC is observed in the case of a weak coupling between the normal metal and the external reservoir. Phase coherent ac effect is also observed when rf is irradiated to the junction.

  4. Theory of tunneling in metal--superconductor devices: Supercurrents in the superconductor gap at zero temperature

    International Nuclear Information System (INIS)

    Garcia, N.; Flores, F.; Guinea, F.

    1988-01-01

    Tunneling experiments in metal-oxide superconductor have shown the existence of ''leakage'' currents for applied voltages V smaller than one-half of the superconductor gap Δ. These currents are independent of temperature T. Recently experiments with scanning tunneling microscopy (STM) and squeezable tunnel junctions have shown that the observation of the superconductor gap depends strongly on the resistance in the junction. In fact only for resistances larger than ∼10 6 Ω the gap is clearly observable. These experiments have been explained in terms of the perturbative Hamiltonian formalism of Bardeen. However, it may happen that this theory while applicable for very large resistances may not be so for small tunnel resistances. We present here a nonperturbative theory in all orders of the transmitivity chemical bondTochemical bond 2 and show the existence of supercurrents for values of V 2 . We believe that experiments in STM and other junctions should be interpreted in the frame of this theory

  5. Tunnel and thermal c-axis transport in BSCCO in the normal and pseudogap states

    International Nuclear Information System (INIS)

    Giura, M; Fastampa, R; Sarti, S; Pompeo, N; Silva, E

    2007-01-01

    We consider the problem of c-axis transport in double-layered cuprates, in particular with reference to Bi 2 Sr 2 CaCu 2 O 8+δ compounds. We exploit the effect of the two barriers on the thermal and tunnel transport. The resulting model is able to describe accurately the normal state c-axis resistivity in Bi 2 Sr 2 CaCu 2 O 8+δ , from the underdoped side up to the strongly overdoped. We extend the model, without introducing additional parameters, in order to allow for the decrease of the barrier when an external voltage bias is applied. The extended model is found to describe properly the c-axis resistivity for small voltage bias above the pseudogap temperature T * , the c-axis resistivity for large voltage bias even below T c , and the differential dI/dV curves taken in mesa structures

  6. Optimization of superconductor--normal-metal--superconductor Josephson junctions for high critical-current density

    International Nuclear Information System (INIS)

    Golub, A.; Horovitz, B.

    1994-01-01

    The application of superconducting Bi 2 Sr 2 CaCu 2 O 8 and YBa 2 Cu 3 O 7 wires or tapes to electronic devices requires the optimization of the transport properties in Ohmic contacts between the superconductor and the normal metal in the circuit. This paper presents results of tunneling theory in superconductor--normal-metal--superconductor (SNS) junctions, in both pure and dirty limits. We derive expressions for the critical-current density as a function of the normal-metal resistivity in the dirty limit or of the ratio of Fermi velocities and effective masses in the clean limit. In the latter case the critical current increases when the ratio γ of the Fermi velocity in the superconductor to that of the weak link becomes much less than 1 and it also has a local maximum if γ is close to 1. This local maximum is more pronounced if the ratio of effective masses is large. For temperatures well below the critical temperature of the superconductors the model with abrupt pair potential on the SN interfaces is considered and its applicability near the critical temperature is examined

  7. Numerical Simulation of Tunneling Current in an Anisotropic Metal-Oxide-Semiconductor Capacitor

    Directory of Open Access Journals (Sweden)

    Khairurrijal khairurrijal

    2012-09-01

    Full Text Available In this paper, we have developed a model of the tunneling currents through a high-k dielectric stack in MOS capacitors with anisotropic masses. The transmittance was numerically calculated by employing a transfer matrix method and including longitudinal-transverse kinetic energy coupling which is represented by an electron phase velocity in the gate. The transmittance was then applied to calculate tunneling currents in TiN/HfSiOxN/SiO2/p-Si MOS capacitors. The calculated results show that as the gate electron velocity increases, the transmittance decreases and therefore the tunneling current reduces. The tunneling current becomes lower as the effective oxide thickness (EOT of HfSiOxN layer increases. When the incident electron passed through the barriers in the normal incident to the interface, the electron tunneling process becomes easier. It was also shown that the tunneling current was independent of the substrate orientation. Moreover, the model could be used in designing high speed MOS devices with low tunneling currents.

  8. Proximity effect in normal metal-multiband superconductor hybrid structures

    NARCIS (Netherlands)

    Brinkman, Alexander; Golubov, Alexandre Avraamovitch; Kupriyanov, M. Yu

    2004-01-01

    A theory of the proximity effect in normal metal¿multiband superconductor hybrid structures is formulated within the quasiclassical Green's function formalism. The quasiclassical boundary conditions for multiband hybrid structures are derived in the dirty limit. It is shown that the existence of

  9. Anisotropic transport of normal metal-barrier-normal metal junctions in monolayer phosphorene.

    Science.gov (United States)

    De Sarkar, Sangita; Agarwal, Amit; Sengupta, K

    2017-07-19

    We study transport properties of a phosphorene monolayer in the presence of single and multiple potential barriers of height U 0 and width d, using both continuum and microscopic lattice models, and show that the nature of electron transport along its armchair edge (x direction) is qualitatively different from its counterpart in both conventional two-dimensional electron gas with Schrödinger-like quasiparticles and graphene or surfaces of topological insulators hosting massless Dirac quasiparticles. We show that the transport, mediated by massive Dirac electrons, allows one to achieve collimated quasiparticle motion along x and thus makes monolayer phosphorene an ideal experimental platform for studying Klein paradox in the context of gapped Dirac materials. We study the dependence of the tunneling conductance [Formula: see text] as a function of d and U 0 , and demonstrate that for a given applied voltage V its behavior changes from oscillatory to decaying function of d for a range of U 0 with finite non-zero upper and lower bounds, and provide analytical expression for these bounds within which G decays with d. We contrast such behavior of G with that of massless Dirac electrons in graphene and also with that along the zigzag edge (y direction) in phosphorene where the quasiparticles obey an effective Schrödinger equation at low energy. We also study transport through multiple barriers along x and demonstrate that these properties hold for transport through multiple barriers as well. Finally, we suggest concrete experiments which may verify our theoretical predictions.

  10. Anisotropic transport of normal metal-barrier-normal metal junctions in monolayer phosphorene

    Science.gov (United States)

    De Sarkar, Sangita; Agarwal, Amit; Sengupta, K.

    2017-07-01

    We study transport properties of a phosphorene monolayer in the presence of single and multiple potential barriers of height U 0 and width d, using both continuum and microscopic lattice models, and show that the nature of electron transport along its armchair edge (x direction) is qualitatively different from its counterpart in both conventional two-dimensional electron gas with Schrödinger-like quasiparticles and graphene or surfaces of topological insulators hosting massless Dirac quasiparticles. We show that the transport, mediated by massive Dirac electrons, allows one to achieve collimated quasiparticle motion along x and thus makes monolayer phosphorene an ideal experimental platform for studying Klein paradox in the context of gapped Dirac materials. We study the dependence of the tunneling conductance G\\equiv {{G}xx} as a function of d and U 0, and demonstrate that for a given applied voltage V its behavior changes from oscillatory to decaying function of d for a range of U 0 with finite non-zero upper and lower bounds, and provide analytical expression for these bounds within which G decays with d. We contrast such behavior of G with that of massless Dirac electrons in graphene and also with that along the zigzag edge (y direction) in phosphorene where the quasiparticles obey an effective Schrödinger equation at low energy. We also study transport through multiple barriers along x and demonstrate that these properties hold for transport through multiple barriers as well. Finally, we suggest concrete experiments which may verify our theoretical predictions.

  11. Anisotropic Magnetoresistance and Anisotropic Tunneling Magnetoresistance due to Quantum Interference in Ferromagnetic Metal Break Junctions

    DEFF Research Database (Denmark)

    Bolotin, Kirill; Kuemmeth, Ferdinand; Ralph, D

    2006-01-01

    We measure the low-temperature resistance of permalloy break junctions as a function of contact size and the magnetic field angle in applied fields large enough to saturate the magnetization. For both nanometer-scale metallic contacts and tunneling devices we observe large changes in resistance w...... with the angle, as large as 25% in the tunneling regime. The pattern of magnetoresistance is sensitive to changes in bias on a scale of a few mV. We interpret the effect as a consequence of conductance fluctuations due to quantum interference....

  12. Gate tunneling current and quantum capacitance in metal-oxide-semiconductor devices with graphene gate electrodes

    Science.gov (United States)

    An, Yanbin; Shekhawat, Aniruddh; Behnam, Ashkan; Pop, Eric; Ural, Ant

    2016-11-01

    Metal-oxide-semiconductor (MOS) devices with graphene as the metal gate electrode, silicon dioxide with thicknesses ranging from 5 to 20 nm as the dielectric, and p-type silicon as the semiconductor are fabricated and characterized. It is found that Fowler-Nordheim (F-N) tunneling dominates the gate tunneling current in these devices for oxide thicknesses of 10 nm and larger, whereas for devices with 5 nm oxide, direct tunneling starts to play a role in determining the total gate current. Furthermore, the temperature dependences of the F-N tunneling current for the 10 nm devices are characterized in the temperature range 77-300 K. The F-N coefficients and the effective tunneling barrier height are extracted as a function of temperature. It is found that the effective barrier height decreases with increasing temperature, which is in agreement with the results previously reported for conventional MOS devices with polysilicon or metal gate electrodes. In addition, high frequency capacitance-voltage measurements of these MOS devices are performed, which depict a local capacitance minimum under accumulation for thin oxides. By analyzing the data using numerical calculations based on the modified density of states of graphene in the presence of charged impurities, it is shown that this local minimum is due to the contribution of the quantum capacitance of graphene. Finally, the workfunction of the graphene gate electrode is extracted by determining the flat-band voltage as a function of oxide thickness. These results show that graphene is a promising candidate as the gate electrode in metal-oxide-semiconductor devices.

  13. Passivation of a Metal Contact with a Tunneling Layer

    DEFF Research Database (Denmark)

    Loozen, X.; Larsen, J.B.; Dross, F.

    2011-01-01

    The potential of contact passivation for increasing cell performance is indicated by several results reported in the literature. However, scant characterization of the tunneling layers used for that purpose has been reported. In this paper, contact passivation is investigated by insertion...... of an ultra-thin AlOx layer between an n-type emitter and a Ti/Pd/Ag contact. By using a 1.5nm thick layer, an increase of the minority carrier lifetime by a factor of 2.7 is achieved. Since current-voltage measurements indicate that an ohmic behavior is conserved for AlOx layers as thick as 1.5nm, a 1.5nm Al...

  14. Spin-polarized currents in the tunnel contact of a normal conductor and a two-dimensional topological insulator

    International Nuclear Information System (INIS)

    Sukhanov, A. A.; Sablikov, V. A.

    2013-01-01

    The spin filtering of electrons tunneling from the edge states of a two-dimensional topological insulator into a normal conductor under a magnetic field (external or induced due to proximity to a magnetic insulator) is studied. Calculations are performed for a tunnel contact of finite length between the topological insulator and an electronic multimode quantum strip. It is shown that the flow of tunneling electrons is split in the strip, so that spin-polarized currents arise in its left and right branches. These currents can be effectively controlled by the contact voltage and the chemical potential of the system. The presence of a magnetic field, which splits the spin subbands of the electron spectrum in the strip, gives rise to switching of the spin current between the strip branches

  15. Dual metal gate tunneling field effect transistors based on MOSFETs: A 2-D analytical approach

    Science.gov (United States)

    Ramezani, Zeinab; Orouji, Ali A.

    2018-01-01

    A novel 2-D analytical drain current model of novel Dual Metal Gate Tunnel Field Effect Transistors Based on MOSFETs (DMG-TFET) is presented in this paper. The proposed Tunneling FET is extracted from a MOSFET structure by employing an additional electrode in the source region with an appropriate work function to induce holes in the N+ source region and hence makes it as a P+ source region. The electric field is derived which is utilized to extract the expression of the drain current by analytically integrating the band to band tunneling generation rate in the tunneling region based on the potential profile by solving the Poisson's equation. Through this model, the effects of the thin film thickness and gate voltage on the potential, the electric field, and the effects of the thin film thickness on the tunneling current can be studied. To validate our present model we use SILVACO ATLAS device simulator and the analytical results have been compared with it and found a good agreement.

  16. Tunneling Evidence of Half-Metallic Ferromagnetism in La(0.7)Ca(0.3)MnO(3)

    Science.gov (United States)

    Wei, J. Y. T.; Yeh, N. C.; Vasquez, R. P.

    1997-01-01

    Direct experimental evidence of half-metallic density of states (DOS) is observed by scanning tunneling spectroscopy on ferromagnetic La(0.7)Ca(0.3)MnO(3) which exhibits colossal magnetoresistance (SMR).

  17. Resonant photon tunneling via surface plasmon polaritons through one-dimensional metal-dielectric metamaterials

    OpenAIRE

    Tomita, Satoshi; Yokoyama, Takashi; Yanagi, Hisao; Wood, Ben; Pendry, John B.; Fujii, Minoru; Hayashi, Shinji

    2008-01-01

    We report resonant photon tunneling (RPT) through onedimensional metamaterials consisting of alternating layers of metal and dielectric. RPT via a surface plasmon polariton state permits evanescent light waves with large wavenumbers to be conveyed through the metamaterial. This is the mechanism for sub-wavelength imaging recently demonstrated with a super-lens. Furthermore, we find that the RPT peak is shifted from the reflectance dip with increasing the number of Al layers, indicating that t...

  18. Spin Hall magnetoresistance in antiferromagnet/normal metal bilayers

    KAUST Repository

    Manchon, Aurelien

    2017-01-01

    We investigate the emergence of spin Hall magnetoresistance in a magnetic bilayer composed of a normal metal adjacent to an antiferromagnet. Based on a recently derived drift diffusion equation, we show that the resistance of the bilayer depends on the relative angle between the direction transverse to the current flow and the Néel order parameter. While this effect presents striking similarities with the spin Hall magnetoresistance recently reported in ferromagnetic bilayers, its physical origin is attributed to the anisotropic spin relaxation of itinerant spins in the antiferromagnet.

  19. Infrared rectification in a nanoantenna-coupled metal-oxide-semiconductor tunnel diode.

    Science.gov (United States)

    Davids, Paul S; Jarecki, Robert L; Starbuck, Andrew; Burckel, D Bruce; Kadlec, Emil A; Ribaudo, Troy; Shaner, Eric A; Peters, David W

    2015-12-01

    Direct rectification of electromagnetic radiation is a well-established method for wireless power conversion in the microwave region of the spectrum, for which conversion efficiencies in excess of 84% have been demonstrated. Scaling to the infrared or optical part of the spectrum requires ultrafast rectification that can only be obtained by direct tunnelling. Many research groups have looked to plasmonics to overcome antenna-scaling limits and to increase the confinement. Recently, surface plasmons on heavily doped Si surfaces were investigated as a way of extending surface-mode confinement to the thermal infrared region. Here we combine a nanostructured metallic surface with a heavily doped Si infrared-reflective ground plane designed to confine infrared radiation in an active electronic direct-conversion device. The interplay of strong infrared photon-phonon coupling and electromagnetic confinement in nanoscale devices is demonstrated to have a large impact on ultrafast electronic tunnelling in metal-oxide-semiconductor (MOS) structures. Infrared dispersion of SiO2 near a longitudinal optical (LO) phonon mode gives large transverse-field confinement in a nanometre-scale oxide-tunnel gap as the wavelength-dependent permittivity changes from 1 to 0, which leads to enhanced electromagnetic fields at material interfaces and a rectified displacement current that provides a direct conversion of infrared radiation into electric current. The spectral and electrical signatures of the nanoantenna-coupled tunnel diodes are examined under broadband blackbody and quantum-cascade laser (QCL) illumination. In the region near the LO phonon resonance, we obtained a measured photoresponsivity of 2.7 mA W(-1) cm(-2) at -0.1 V.

  20. Probing the atomic structure of metallic nanoclusters with the tip of a scanning tunneling microscope.

    Science.gov (United States)

    Schouteden, Koen; Lauwaet, Koen; Janssens, Ewald; Barcaro, Giovanni; Fortunelli, Alessandro; Van Haesendonck, Chris; Lievens, Peter

    2014-02-21

    Preformed Co clusters with an average diameter of 2.5 nm are produced in the gas phase and are deposited under controlled ultra-high vacuum conditions onto a thin insulating NaCl film on Au(111). Relying on a combined experimental and theoretical investigation, we demonstrate visualization of the three-dimensional atomic structure of the Co clusters by high-resolution scanning tunneling microscopy (STM) using a Cl functionalized STM tip that can be obtained on the NaCl surface. More generally, use of a functionalized STM tip may allow for systematic atomic structure determination with STM of nanoparticles that are deposited on metal surfaces.

  1. Heavy metal analysis in soils and vegetation for assessing emission fields near tunnel ventilation systems

    International Nuclear Information System (INIS)

    Peer, T.

    1992-01-01

    In the environment of the ventilation system of the Tauern and Katschberg tunnels, lead, cadmium, zinc and copper were determined in soil and vegetation samples in order to determine the emission fields. Thalli of Pseudevernia furfuracea in addition were used as active monitors. The surface-level exhaust portals produce relatively small atmospheric pollution fields. Via the detached exhaust tower at Urbanalm/Mosermandl (2.000 msm), a long-distance transport: Lead concentrations in soils are above average as far away as 1.5 kms of distance. The solubility of heavy metals increases in the order Pb [de

  2. Resonant photon tunneling via surface plasmon polaritons through one-dimensional metal-dielectric metamaterials.

    Science.gov (United States)

    Tomita, Satoshi; Yokoyama, Takashi; Yanagi, Hisao; Wood, Ben; Pendry, John B; Fujii, Minoru; Hayashi, Shinji

    2008-06-23

    We report resonant photon tunneling (RPT) through one-dimensional metamaterials consisting of alternating layers of metal and dielectric. RPT via a surface plasmon polariton state permits evanescent light waves with large wavenumbers to be conveyed through the metamaterial. This is the mechanism for sub-wavelength imaging recently demonstrated with a super-lens. Furthermore, we find that the RPT peak is shifted from the reflectance dip with increasing the number of Al layers, indicating that the shift is caused by the losses in the RPT.

  3. Band-to-band tunneling in a carbon nanotube metal-oxide-semiconductor field-effect transistor is dominated by phonon assisted tunneling

    OpenAIRE

    Koswatta, Siyuranga O.; Lundstrom, Mark S.; Nikonov, Dmitri E.

    2007-01-01

    Band-to-band tunneling (BTBT) devices have recently gained a lot of interest due to their potential for reducing power dissipation in integrated circuits. We have performed extensive simulations for the BTBT operation of carbon nanotube metal-oxide-semiconductor field-effect transistors (CNT-MOSFETs) using the non-equilibrium Green's functions formalism for both ballistic and dissipative quantum transport. In comparison with recently reported experimental data (Y. Lu et al, J. Am. Chem. Soc.,...

  4. Spin torques in ferromagnetic/normal-metal structures

    Czech Academy of Sciences Publication Activity Database

    Xia, K.; Kelly, P. J.; Bauer, G. E. W.; Brataas, A.; Turek, Ilja

    2002-01-01

    Roč. 65, č. 22 (2002), s. 220401 ISSN 0163-1829 R&D Projects: GA ČR GA202/00/0122 Institutional research plan: CEZ:AV0Z2041904 Keywords : tunneling * interface Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.327, year: 2002

  5. Multiply gapped density of states in a normal metal in contact with a superconductor

    Energy Technology Data Exchange (ETDEWEB)

    Reutlinger, Johannes; Belzig, Wolfgang [Department of Physics, University of Konstanz, 78457 Konstanz (Germany); Nazarov, Yuli V. [Kavli Institute of Nanoscience Delft, Delft University of Technology, 2628 CJ Delft (Netherlands); Glazman, Leonid I. [Department of Physics, Yale University, New Haven CT 06511-8499 (United States)

    2012-07-01

    The spectral properties of a normal metal adjacent to a superconductor are strongly dependent on the characteristic mesoscopic energy scale - the Thouless energy E{sub Th} - and the strength of the connection. In this work, we predict that the local density of states (LDOS), besides the well know minigap {proportional_to}E{sub Th}, can exhibit a multiple gap structure, which strongly depends on the type of the contact. For ballistic contacts we calculate these secondary gaps analytically in the framework of quantum circuit theory of mesoscopic transport. The secondary gaps are absent in the case of tunnel contacts. In the general case the equations are solved numerically for more realistic contacts, like for example diffusive connectors or dirty interfaces, which are characterized by continuous distributions of transmission eigenvalues between 0 and 1. We find that the gap vanishes in these cases, but the density of states is still suppressed around the superconducting gap edge. Distribution functions with a stronger weight at higher transmissions can be modeled through asymmetric ballistic double junctions, which even exhibit multiple gaps. Such spectral signatures are fundamental to disordered nanoscopic conductors and experimentally accessible.

  6. Tunneling measurements in amorphous layers of superconducting transition metals: molybdenum, vanadium, and niobium

    International Nuclear Information System (INIS)

    Roll, U.

    1981-01-01

    Tunneling experiments with amorphous Molybdenum and Vanadium layers are presented, showing no significant increase of the reduced energy gap 2δ(O)/kTsub(c)(δ) compared with the BCS-value, in contrast to all previous measurement on amorphous superconducting materials of simple s-p-metals, showing on enhanced electron-phonon-interaction. This fact may lead to the conclusion that the strong electron-phonon coupling is caused by the amorphous structure of the superconductor. The present results, however, indicate that the strong electron-phonon interaction cannot be explained only ba the amorphous structure of the superconductor. In the measurements of the second derivative d 2 U/dI 2 no phonon-induced structures have been observed for amorphous molybdenum, vanadium and niobium films. Apparently the phonon density of states F(#betta#) of amorphous transition metals has no structure, thus the longitudinal and transverse phonons cannot be identified in the measured (d 2 U/dI 2 )-curves. This particular behaviour of the amorphous transition metals in contrast to the simple s-p-metals may be interpreted by the strongly localized d-electrons. (orig./GG) [de

  7. Heat transport and electron cooling in ballistic normal-metal/spin-filter/superconductor junctions

    International Nuclear Information System (INIS)

    Kawabata, Shiro; Vasenko, Andrey S.; Ozaeta, Asier; Bergeret, Sebastian F.; Hekking, Frank W.J.

    2015-01-01

    We investigate electron cooling based on a clean normal-metal/spin-filter/superconductor junction. Due to the suppression of the Andreev reflection by the spin-filter effect, the cooling power of the system is found to be extremely higher than that for conventional normal-metal/nonmagnetic-insulator/superconductor coolers. Therefore we can extract large amount of heat from normal metals. Our results strongly indicate the practical usefulness of the spin-filter effect for cooling detectors, sensors, and quantum bits

  8. Heat transport and electron cooling in ballistic normal-metal/spin-filter/superconductor junctions

    Energy Technology Data Exchange (ETDEWEB)

    Kawabata, Shiro, E-mail: s-kawabata@aist.go.jp [Electronics and Photonics Research Institute (ESPRIT), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan); Vasenko, Andrey S. [LPMMC, Université Joseph Fourier and CNRS, 25 Avenue des Martyrs, BP 166, 38042 Grenoble (France); Ozaeta, Asier [Centro de Física de Materiales (CFM-MPC), Centro Mixto CSIC-UPV/EHU, Manuel de Lardizabal 5, E-20018 San Sebastián (Spain); Bergeret, Sebastian F. [Centro de Física de Materiales (CFM-MPC), Centro Mixto CSIC-UPV/EHU, Manuel de Lardizabal 5, E-20018 San Sebastián (Spain); Donostia International Physics Center (DIPC), Manuel de Lardizabal 5, E-20018 San Sebastián (Spain); Hekking, Frank W.J. [LPMMC, Université Joseph Fourier and CNRS, 25 Avenue des Martyrs, BP 166, 38042 Grenoble (France)

    2015-06-01

    We investigate electron cooling based on a clean normal-metal/spin-filter/superconductor junction. Due to the suppression of the Andreev reflection by the spin-filter effect, the cooling power of the system is found to be extremely higher than that for conventional normal-metal/nonmagnetic-insulator/superconductor coolers. Therefore we can extract large amount of heat from normal metals. Our results strongly indicate the practical usefulness of the spin-filter effect for cooling detectors, sensors, and quantum bits.

  9. Interfacial scanning tunneling spectroscopy (STS) of chalcogenide/metal hybrid nanostructure

    Energy Technology Data Exchange (ETDEWEB)

    Saad, Mahmoud M.; Abdallah, Tamer [Physics Department, Faculty of Science, Ain Shams University, Abbassia, Cairo (Egypt); Easawi, Khalid; Negm, Sohair [Department of Physics and Mathematics, Faculty of Engineering (Shoubra), Benha University (Egypt); Talaat, Hassan, E-mail: hassantalaat@hotmail.com [Physics Department, Faculty of Science, Ain Shams University, Abbassia, Cairo (Egypt)

    2015-05-15

    Graphical abstract: - Highlights: • Comparing band gaps values obtained optically with STS. • Comparing direct imaging with calculated dimensions. • STS determination of the interfacial band bending of metal/chalcogenide. - Abstract: The electronic structure at the interface of chalcogenide/metal hybrid nanostructure (CdSe–Au tipped) had been studied by UHV scanning tunneling spectroscopy (STS) technique at room temperature. This nanostructure was synthesized by a phase transfer chemical method. The optical absorption of this hybrid nanostructure was recorded, and the application of the effective mass approximation (EMA) model gave dimensions that were confirmed by the direct measurements using the scanning tunneling microscopy (STM) as well as the high-resolution transmission electron microscope (HRTEM). The energy band gap obtained by STS agrees with the values obtained from the optical absorption. Moreover, the STS at the interface of CdSe–Au tipped hybrid nanostructure between CdSe of size about 4.1 ± 0.19 nm and Au tip of size about 3.5 ± 0.29 nm shows a band bending about 0.18 ± 0.03 eV in CdSe down in the direction of the interface. Such a result gives a direct observation of the electron accumulation at the interface of CdSe–Au tipped hybrid nanostructure, consistent with its energy band diagram. The presence of the electron accumulation at the interface of chalcogenides with metals has an important implication for hybrid nanoelectronic devices and the newly developed plasmon/chalcogenide photovoltaic solar energy conversion.

  10. Trace metal physiology in normal and pathological tissues

    International Nuclear Information System (INIS)

    Hamer, C.J.A. van den; Nooijen, J.L.

    1979-01-01

    Many of the ionic tumour seeking radiopharmaceuticals consist of a metal ion combined with an anion. The choice of metal depends on the existence of radionuclides with suitable radiological properties, and on their availability. Because several of the metal complexes used in nuclear medicine are of rather recent interest, information about their metabolism is scarce. Although nuclear medicine is limited to those metals which radiochemists can produce, we can manipulate the chemical form in which the metals are introduced into the organism to some extent. The relation between chemical form and biological pathway, e.g., the extent of accumulation in certain tissues, is subject of study related to trace metal physiology. It is the purpose of this paper to try and bridge the gap between nuclear medicine and trace metal physiology by showing the progress made by the latter in the study of the metabolism of copper and zinc. Few trace metals have been studied as thoroughly as these, although iron could have been chosen just as well. This presentation is limited to a study of the fate of a metal derivative after its intravenous injection. Where possible the results obtained are related to the behaviour of metals presently of interest to nuclear medicine. (Auth.)

  11. Tunnel Field-Effect Transistors in 2-D Transition Metal Dichalcogenide Materials

    Science.gov (United States)

    Ilatikhameneh, Hesameddin; Tan, Yaohua; Novakovic, Bozidar; Klimeck, Gerhard; Rahman, Rajib; Appenzeller, Joerg

    2015-12-01

    In this work, the performance of Tunnel Field-Effect Transistors (TFETs) based on two-dimensional Transition Metal Dichalcogenide (TMD) materials is investigated by atomistic quantum transport simulations. One of the major challenges of TFETs is their low ON-currents. 2D material based TFETs can have tight gate control and high electric fields at the tunnel junction, and can in principle generate high ON-currents along with a sub-threshold swing smaller than 60 mV/dec. Our simulations reveal that high performance TMD TFETs, not only require good gate control, but also rely on the choice of the right channel material with optimum band gap, effective mass and source/drain doping level. Unlike previous works, a full band atomistic tight binding method is used self-consistently with 3D Poisson equation to simulate ballistic quantum transport in these devices. The effect of the choice of TMD material on the performance of the device and its transfer characteristics are discussed. Moreover, the criteria for high ON-currents are explained with a simple analytic model, showing the related fundamental factors. Finally, the subthreshold swing and energy-delay of these TFETs are compared with conventional CMOS devices.

  12. Development of procedures for the acquisition of metal Additive Manufacturing (AM) parts for use in the CSIR's wind tunnel models

    CSIR Research Space (South Africa)

    Johnston, C

    2015-11-04

    Full Text Available The first Additive Manufacturing (AM) non-load-bearing, client furnished part was used in the CSIR’s wind tunnels in 2007. The advent of metal-grown materials, and the acquisition of machines to grow them in South Africa, has made it feasible...

  13. Optically induced bistable states in metal/tunnel-oxide/semiconductor /MTOS/ junctions

    Science.gov (United States)

    Lai, S. K.; Dressendorfer, P. V.; Ma, T. P.; Barker, R. C.

    1981-01-01

    A new switching phenomenon in metal-oxide semiconductor tunnel junction has been discovered. With a sufficiently large negative bias applied to the electrode, incident visible light of intensity greater than about 1 microW/sq cm causes the reverse-biased junction to switch from a low-current to a high-current state. It is believed that hot-electron-induced impact ionization provides the positive feedback necessary for switching, and causes the junction to remain in its high-current state after the optical excitation is removed. The junction may be switched back to the low-current state electrically. The basic junction characteristics have been measured, and a simple model for the switching phenomenon has been developed.

  14. Study of the tunnelling initiated leakage current through the carbon nanotube embedded gate oxide in metal oxide semiconductor structures

    International Nuclear Information System (INIS)

    Chakraborty, Gargi; Sarkar, C K; Lu, X B; Dai, J Y

    2008-01-01

    The tunnelling currents through the gate dielectric partly embedded with semiconducting single-wall carbon nanotubes in a silicon metal-oxide-semiconductor (MOS) structure have been investigated. The application of the gate voltage to such an MOS device results in the band bending at the interface of the partly embedded oxide dielectric and the surface of the silicon, initiating tunnelling through the gate oxide responsible for the gate leakage current whenever the thickness of the oxide is scaled. A model for silicon MOS structures, where carbon nanotubes are confined in a narrow layer embedded in the gate dielectric, is proposed to investigate the direct and the Fowler-Nordheim (FN) tunnelling currents of such systems. The idea of embedding such elements in the gate oxide is to assess the possibility for charge storage for memory device applications. Comparing the FN tunnelling onset voltage between the pure gate oxide and the gate oxide embedded with carbon nanotubes, it is found that the onset voltage decreases with the introduction of the nanotubes. The direct tunnelling current has also been studied at very low gate bias, for the thin oxide MOS structure which plays an important role in scaling down the MOS transistors. The FN tunnelling current has also been studied with varying nanotube diameter

  15. Influence of semiconductor barrier tunneling on the current-voltage characteristics of tunnel metal-oxide-semiconductor diodes

    DEFF Research Database (Denmark)

    Nielsen, Otto M.

    1983-01-01

    of multistep tunneling recombination current and injected minority carrier diffusion current. This can explain the observed values of the diode quality factor n. The results also show that the voltage drop across the oxide Vox is increased with increased NA, with the result that the lowering of the minority...... carrier diode current Jmin is greater than in the usual theory. The conclusion drawn is that the increase in Vox and lowering of Jmin is due to multistep tunneling of majority carriers through the semiconductor barrier. Journal of Applied Physics is copyrighted by The American Institute of Physics.......Current–voltage characteristics have been examined for Al–SiO2–pSi diodes with an interfacial oxide thickness of delta[approximately-equal-to]20 Å. The diodes were fabricated on and oriented substrates with an impurity concentration in the range of NA=1014–1016 cm−3. The results show that for low...

  16. Delayed electron emission in strong-field driven tunnelling from a metallic nanotip in the multi-electron regime

    Science.gov (United States)

    Yanagisawa, Hirofumi; Schnepp, Sascha; Hafner, Christian; Hengsberger, Matthias; Kim, Dong Eon; Kling, Matthias F.; Landsman, Alexandra; Gallmann, Lukas; Osterwalder, Jürg

    2016-01-01

    Illuminating a nano-sized metallic tip with ultrashort laser pulses leads to the emission of electrons due to multiphoton excitations. As optical fields become stronger, tunnelling emission directly from the Fermi level becomes prevalent. This can generate coherent electron waves in vacuum leading to a variety of attosecond phenomena. Working at high emission currents where multi-electron effects are significant, we were able to characterize the transition from one regime to the other. Specifically, we found that the onset of laser-driven tunnelling emission is heralded by the appearance of a peculiar delayed emission channel. In this channel, the electrons emitted via laser-driven tunnelling emission are driven back into the metal, and some of the electrons reappear in the vacuum with some delay time after undergoing inelastic scattering and cascading processes inside the metal. Our understanding of these processes gives insights on attosecond tunnelling emission from solids and should prove useful in designing new types of pulsed electron sources. PMID:27786287

  17. Normal concentrations of heavy metals in autistic spectrum disorders.

    Science.gov (United States)

    Albizzati, A; Morè, L; Di Candia, D; Saccani, M; Lenti, C

    2012-02-01

    Autism is a neurological-psychiatric disease. In the last 20 years we witnessed a strong increase of autism diagnoses. To explain this increase, some scientists put forward the hypothesis that heavy metal intoxication may be one of the causes of autism. The origin of such an intoxication was hypothesised to be vaccines containing thimerosal as antimicrobic preservative. This preservative is mainly made up of mercury. The aim of our research was to investigate the correlation between autism and high biological concentrations of heavy metals. Seventeen autistic patients, between 6 and 16 years old (average: 11.52 DS: 3.20) (15 males and 2 females), were investigated, as well as 20 non autistic subjects from neuropsychiatric service between 6 and 16 years (average: 10.41 DS: 3.20) (15 males and 2 females). In both groups blood, urine and hair samples were analysed trough means of a semiquantitative analysis of heavy metal dosing. The metals analysed were Lead, mercury, cadmium and aluminium, since their build-up may give both neurological and psychiatric symptoms. The comparison of the mean values of the concentrations between the groups, performed with ANOVA test, has shown no statistically relevant differences. There wasn't correlation between autism and heavy metal concentration.

  18. Band Alignment in MoS2/WS2 Transition Metal Dichalcogenide Heterostructures Probed by Scanning Tunneling Microscopy and Spectroscopy.

    Science.gov (United States)

    Hill, Heather M; Rigosi, Albert F; Rim, Kwang Taeg; Flynn, George W; Heinz, Tony F

    2016-08-10

    Using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS), we examine the electronic structure of transition metal dichalcogenide heterostructures (TMDCHs) composed of monolayers of MoS2 and WS2. STS data are obtained for heterostructures of varying stacking configuration as well as the individual monolayers. Analysis of the tunneling spectra includes the influence of finite sample temperature, yield information about the quasi-particle bandgaps, and the band alignment of MoS2 and WS2. We report the band gaps of MoS2 (2.16 ± 0.04 eV) and WS2 (2.38 ± 0.06 eV) in the materials as measured on the heterostructure regions and the general type II band alignment for the heterostructure, which shows an interfacial band gap of 1.45 ± 0.06 eV.

  19. Normal and superconducting metals at microwave frequencies-classic experiments

    International Nuclear Information System (INIS)

    Dheer, P.N.

    1999-01-01

    A brief review of experimental and theoretical work on the behaviour of normal and superconducting materials at microwave frequencies before the publication of Bardeen, Cooper and Schrieffer's theory of superconductivity is given. The work discussed is mostly that of Pippard and his coworkers. It is shown that these investigations lead not only to a better understanding of the electrodynamics of normal and superconducting state but also of the nature of the superconducting state itself. (author)

  20. Subluxation of the peroneus long tendon in the cuboid tunnel: is it normal or pathologic? An ultrasound and magnetic resonance imaging study

    Energy Technology Data Exchange (ETDEWEB)

    Stone, Taylor J. [Charlotte Radiology, Charlotte, NC (United States); Rosenberg, Zehava S.; Ciavarra, Gina; Bencardino, Jenny T. [New York Langone Medical Center / Hospital for Joint Diseases, New York, NY (United States); Velez, Zoraida Restrepo [Cedimed-Dinamica, Medellin (Colombia); Prost, Roberto [Marino Hospital ASL Cagliari, Cagliari (Italy)

    2016-03-15

    To evaluate the position of the peroneus longus (PL) tendon relative to the cuboid tuberosity and cuboid tunnel during ankle dorsiflexion and plantarflexion using ultrasound and MRI. The study population included two groups: 20 feet of 10 asymptomatic volunteers who underwent prospective dynamic ultrasound and 55 ankles found through retrospective review of routine ankle MRI examinations. The location of the PL tendon at the cuboid tuberosity and cuboid tunnel was designated as completely within the tunnel, indeterminate, or subluxed with respect to ankle dorsiflexion and plantarflexion. On dynamic ultrasound, the PL tendon was perched plantar to the cuboid tuberosity in dorsiflexion, and glided to enter the cuboid tunnel distal to the tuberosity in plantarflexion in all 20 feet. On the MRI evaluation, there was a statistically significant difference (p = 0.0006) in the location of the PL tendon between the ankles scanned in dorsiflexion and plantarflexion. Based on our findings on ultrasound and MRI, the PL tendon can glide in and out of the cuboid tunnel along the cuboid tuberosity depending on ankle position. Thus, ''subluxation'' of the tendon as it curves to enter the cuboid tunnel, which to the best of our knowledge has not yet been described, should be recognized as a normal, position-dependent phenomenon and not be reported as pathology. (orig.)

  1. Subluxation of the peroneus long tendon in the cuboid tunnel: is it normal or pathologic? An ultrasound and magnetic resonance imaging study

    International Nuclear Information System (INIS)

    Stone, Taylor J.; Rosenberg, Zehava S.; Ciavarra, Gina; Bencardino, Jenny T.; Velez, Zoraida Restrepo; Prost, Roberto

    2016-01-01

    To evaluate the position of the peroneus longus (PL) tendon relative to the cuboid tuberosity and cuboid tunnel during ankle dorsiflexion and plantarflexion using ultrasound and MRI. The study population included two groups: 20 feet of 10 asymptomatic volunteers who underwent prospective dynamic ultrasound and 55 ankles found through retrospective review of routine ankle MRI examinations. The location of the PL tendon at the cuboid tuberosity and cuboid tunnel was designated as completely within the tunnel, indeterminate, or subluxed with respect to ankle dorsiflexion and plantarflexion. On dynamic ultrasound, the PL tendon was perched plantar to the cuboid tuberosity in dorsiflexion, and glided to enter the cuboid tunnel distal to the tuberosity in plantarflexion in all 20 feet. On the MRI evaluation, there was a statistically significant difference (p = 0.0006) in the location of the PL tendon between the ankles scanned in dorsiflexion and plantarflexion. Based on our findings on ultrasound and MRI, the PL tendon can glide in and out of the cuboid tunnel along the cuboid tuberosity depending on ankle position. Thus, ''subluxation'' of the tendon as it curves to enter the cuboid tunnel, which to the best of our knowledge has not yet been described, should be recognized as a normal, position-dependent phenomenon and not be reported as pathology. (orig.)

  2. Superconducting and normal properties of metallic amorphous systems

    International Nuclear Information System (INIS)

    Esquinazi, P.D.

    1983-02-01

    The superconducting and transport properties (superconducing critical temperature, superconducting critical currents, electric resistivity and thermal conductivity) of the amorphous alloys La 70 Cu 30 and Zr 70 Cu 30 prepared by melt spinning have been investigated. The modification of these properties when, the initial amorphous metals relax to other metastable state under thermal treatment at below crystallization temperatures, have also been studied. (M.E.L.) [es

  3. Electroluminescence of a polythiophene molecular wire suspended between a metallic surface and the tip of a scanning tunneling microscope.

    Science.gov (United States)

    Reecht, Gaël; Scheurer, Fabrice; Speisser, Virginie; Dappe, Yannick J; Mathevet, Fabrice; Schull, Guillaume

    2014-01-31

    The electroluminescence of a polythiophene wire suspended between a metallic surface and the tip of a scanning tunneling microscope is reported. Under positive sample voltage, the spectral and voltage dependencies of the emitted light are consistent with the fluorescence of the wire junction mediated by localized plasmons. This emission is strongly attenuated for the opposite polarity. Both emission mechanism and polarity dependence are similar to what occurs in organic light emitting diodes (OLED) but at the level of a single molecular wire.

  4. Some thermodynamical properties of normal (or ferromagnetic) metal / superconductor heterojunctions

    International Nuclear Information System (INIS)

    Cayssol, Jerome

    2003-01-01

    We have investigated the orbital magnetism of a ballistic hybrid normal-superconductor ring. We have obtained the flux dependent excitation spectrum for arbitrary normal and superconductor lengths. We have introduced a new method to evaluate the current harmonics. We have described the cross-over from the, 'h/eh/e-periodic persistent current to the', h/2e-periodic Josephson current. In a second study, we have calculated the effect of intrinsic ordinary reflexion on the Josephson current in a ballistic superconductor-ferromagnetic-superconductor. The spectrum is strongly modified by gap openings but the current and the 0-π transition are only slightly modified up to very high spin polarisation. In a third study, we analyse the contain of some solutions of Usadel equation. The standard perturbation theory dressed by cooperons enables us to interpret those solutions in terms of diffusive paths connecting Andreev reflexion events. (author) [fr

  5. Direct measurement of α2F in normal metals using point-contacts: noble metals

    International Nuclear Information System (INIS)

    Jansen, A.G.M.; Mueller, F.M.; Wyder, P.

    1976-01-01

    A new technique of forming tiny point junctions, first discussed by Sharvin, is described. By measuring the second derivative of voltage with respect to current, using techniques similar to tunnel junction spectroscopy, structure is found which is consistent with bulk phonon densities of states derived from neutron scattering. The same results were reported at LT 14 by Yanson using a shorted film technique

  6. Local atomic order of a metallic glass made visible by scanning tunneling microscopy

    Science.gov (United States)

    Luo, Yuansu; Samwer, Konrad

    2018-06-01

    Exploring the atomic level structure in amorphous materials by STM becomes extremely difficult due to the localized electronic states. Here we carried out STM studies on a quasi-low-dimensional film of metallic glass Zr65Cu27.5Al7.5 which is ‘ultrathin’ compared with the localization length and/or the length scale of short range order. The local electronic structure must appear more inherent, having states at E f available for tip-sample tunneling current. To enhance imaging contrasts between long-range and short-range orders, the highly oriented pyrolytic graphite was chosen as substrate, so that the structural heterogeneity arising from competition between the glass former ability and the epitaxy can be ascertained. A chemical order predicted for this system was observed in atomic ordered regimes (1–2 monolayers), accompanied with a superstructure with the period Zr–Cu(Al)–Zr along three hexagonal axes. The result implies a chemical short range order in disordered regimes, where polyhedral clusters are dominant with the solute atom Cu(Al) in the center. An attempt for the structural modelling was made based on high resolution STM images, giving icosahedral order on the surface and different Voronoi clusters in 3D space.

  7. The use of Scanning Tunneling Microscope as a novel characterization tool for metallic alloys

    International Nuclear Information System (INIS)

    Brezenitsky, M.; Moreh, R.; Dayan, D.; Kimmel, G.

    1996-01-01

    A novel method is reported for characterizing the microstructure of metals and alloys by utilizing the surface imaging properties of a STM (Scanning Tunneling microscope). In the present work there is no need to take advantage of the high atomic resolution of the STM, instead only gross resolution is required. Twenty different samples having different grain sizes (caused by the mosaic structure) and ranging between 20 to 200 nm were prepared. These dimensions are far below the resolution limit of optical microscopes. The samples were first studied using line profile analysis of XRD spectra while focusing on two of the most characteristic properties of steel which are: grain size and the deviation from cubic symmetry. Some of the samples showed nonuniform XRD line broadening effects, which could be attributed to a tetragonal distortion. If it is true, the samples must consist of martensitic twinned structure, as a result of the typical y to a shear transformation in steels. The samples were then studied using the STM. In general, many 1000 nm x 1000 )zm STM scans were carried out on each sample. In all cases of irregular XRD line broadening, the STM identified bands and sub-bands in the images which fitted the usual twining structure in steels. In addition, the STM images were found to show individual domains, from which histograms of the grain dimensions for each sample were prepared and compared to the XRD data. An excellent agreement was observed between tile two sets of data of grain sizes. The present method is much simpler than that which employs the Transmission Electron Microscope (TEM) as it can be carried out in air and no special requirements on sample preparation is necessary. This work establishes the STM as a very useful characterization tool for studies in metallurgy and metal physics. (author)

  8. Assessment of 1H NMR-based metabolomics analysis for normalization of urinary metals against creatinine.

    Science.gov (United States)

    Cassiède, Marc; Nair, Sindhu; Dueck, Meghan; Mino, James; McKay, Ryan; Mercier, Pascal; Quémerais, Bernadette; Lacy, Paige

    2017-01-01

    Proton nuclear magnetic resonance ( 1 H NMR, or NMR) spectroscopy and inductively coupled plasma-mass spectrometry (ICP-MS) are commonly used for metabolomics and metal analysis in urine samples. However, creatinine quantification by NMR for the purpose of normalization of urinary metals has not been validated. We assessed the validity of using NMR analysis for creatinine quantification in human urine samples in order to allow normalization of urinary metal concentrations. NMR and ICP-MS techniques were used to measure metabolite and metal concentrations in urine samples from 10 healthy subjects. For metabolite analysis, two magnetic field strengths (600 and 700MHz) were utilized. In addition, creatinine concentrations were determined by using the Jaffe method. Creatinine levels were strongly correlated (R 2 =0.99) between NMR and Jaffe methods. The NMR spectra were deconvoluted with a target database containing 151 metabolites that are present in urine. A total of 50 metabolites showed good correlation (R 2 =0.7-1.0) at 600 and 700MHz. Metal concentrations determined after NMR-measured creatinine normalization were comparable to previous reports. NMR analysis provided robust urinary creatinine quantification, and was sufficient for normalization of urinary metal concentrations. We found that NMR-measured creatinine-normalized urinary metal concentrations in our control subjects were similar to general population levels in Canada and the United Kingdom. Copyright © 2016 Elsevier B.V. All rights reserved.

  9. Normal force of magnetorheological fluids with foam metal under oscillatory shear modes

    Energy Technology Data Exchange (ETDEWEB)

    Yao, Xingyan, E-mail: yaoxingyan-jsj@163.com [Research Center of System Health Maintenance, Chongqing Technology and Business University, Chongqing 400067 (China); Chongqing Engineering Laboratory for Detection Control and Integrated System, Chongqing 400067 (China); Liu, Chuanwen; Liang, Huang; Qin, Huafeng [Chongqing Engineering Laboratory for Detection Control and Integrated System, Chongqing 400067 (China); Yu, Qibing; Li, Chuan [Research Center of System Health Maintenance, Chongqing Technology and Business University, Chongqing 400067 (China); Chongqing Engineering Laboratory for Detection Control and Integrated System, Chongqing 400067 (China)

    2016-04-01

    The normal force of magnetorheological (MR) fluids in porous foam metal was investigated in this paper. The dynamic repulsive normal force was studied using an advanced commercial rheometer under oscillatory shear modes. In the presence of magnetic fields, the influences of time, strain amplitude, frequency and shear rate on the normal force of MR fluids drawn from the porous foam metal were systematically analysed. The experimental results indicated that the magnetic field had the greatest effect on the normal force, and the effect increased incrementally with the magnetic field. Increasing the magnetic field produced a step-wise increase in the shear gap. However, other factors in the presence of a constant magnetic field only had weak effects on the normal force. This behaviour can be regarded as a magnetic field-enhanced normal force, as increases in the magnetic field resulted in more MR fluids being released from the porous foam metal, and the chain-like magnetic particles in the MR fluids becoming more elongated with aggregates spanning the gap between the shear plates. - Highlights: • Normal force of MR fluids with metal foam under oscillatory shear modes was studied. • The shear gap was step-wise increased with magnetic fields. • The magnetic field has a greater impact on the normal force.

  10. Normal force of magnetorheological fluids with foam metal under oscillatory shear modes

    International Nuclear Information System (INIS)

    Yao, Xingyan; Liu, Chuanwen; Liang, Huang; Qin, Huafeng; Yu, Qibing; Li, Chuan

    2016-01-01

    The normal force of magnetorheological (MR) fluids in porous foam metal was investigated in this paper. The dynamic repulsive normal force was studied using an advanced commercial rheometer under oscillatory shear modes. In the presence of magnetic fields, the influences of time, strain amplitude, frequency and shear rate on the normal force of MR fluids drawn from the porous foam metal were systematically analysed. The experimental results indicated that the magnetic field had the greatest effect on the normal force, and the effect increased incrementally with the magnetic field. Increasing the magnetic field produced a step-wise increase in the shear gap. However, other factors in the presence of a constant magnetic field only had weak effects on the normal force. This behaviour can be regarded as a magnetic field-enhanced normal force, as increases in the magnetic field resulted in more MR fluids being released from the porous foam metal, and the chain-like magnetic particles in the MR fluids becoming more elongated with aggregates spanning the gap between the shear plates. - Highlights: • Normal force of MR fluids with metal foam under oscillatory shear modes was studied. • The shear gap was step-wise increased with magnetic fields. • The magnetic field has a greater impact on the normal force.

  11. Band-to-band tunneling in a carbon nanotube metal-oxide-semiconductor field-effect transistor is dominated by phonon-assisted tunneling.

    Science.gov (United States)

    Koswatta, Siyuranga O; Lundstrom, Mark S; Nikonov, Dmitri E

    2007-05-01

    Band-to-band tunneling (BTBT) devices have recently gained a lot of interest due to their potential for reducing power dissipation in integrated circuits. We have performed extensive simulations for the BTBT operation of carbon nanotube metal-oxide-semiconductor field-effect transistors (CNT-MOSFETs) using the nonequilibrium Green's function formalism for both ballistic and dissipative quantum transport. In comparison with recently reported experimental data (J. Am. Chem. Soc. 2006, 128, 3518-3519), we have obtained strong evidence that BTBT in CNT-MOSFETs is dominated by optical phonon assisted inelastic transport, which can have important implications on the transistor characteristics. It is shown that, under large biasing conditions, two-phonon scattering may also become important.

  12. Ignition and combustion of bulk metals under elevated, normal and reduced gravity conditions

    Science.gov (United States)

    Abbud-Madrid, Angel; Branch, Melvyn C.; Daily, John W.

    1995-01-01

    This research effort is aimed at providing further insight into this multi-variable dependent phenomena by looking at the effects of gravity on the ignition and combustion behavior of metals. Since spacecraft are subjected to higher-than-1g gravity loads during launch and reentry and to zero-gravity environments while in orbit, the study of ignition and combustion of bulk metals at different gravitational potentials is of great practical concern. From the scientific standpoint, studies conducted under microgravity conditions provide simplified boundary conditions since buoyancy is removed, and make possible the identification of fundamental ignition mechanisms. The effect of microgravity on the combustion of bulk metals has been investigated by Steinberg, et al. on a drop tower simulator. However, no detailed quantitative work has been done on ignition phenomena of bulk metals at lower or higher-than-normal gravitational fields or on the combustion characteristics of metals at elevated gravity. The primary objective of this investigation is the development of an experimental system capable of providing fundamental physical and chemical information on the ignition of bulk metals under different gravity levels. The metals used in the study, iron (Fe), titanium (Ti), zirconium (Zr), magnesium (Mg), zinc (Zn), and copper (Cu) were selected because of their importance as elements of structural metals and their simple chemical composition (pure metals instead of multi-component alloys to avoid complication in morphology and spectroscopic studies). These samples were also chosen to study the two different combustion modes experienced by metals: heterogeneous or surface oxidation, and homogeneous or gas-phase reaction. The experimental approach provides surface temperature profiles, spectroscopic measurements, surface morphology, x-ray spectrometry of metals specimens and their combustion products, and high-speed cinematography of the heating, ignition and combustion

  13. Enhancement of the transverse magneto-optical Kerr effect via resonant tunneling in trilayers containing magneto-optical metals

    Energy Technology Data Exchange (ETDEWEB)

    Girón-Sedas, J. A. [Departamento de Física, Universidad del Valle, AA 25360, Cali (Colombia); Centro de Investigación e Innovación en Bioinformática y Fotónica - CIBioFI, AA 25360 Cali (Colombia); Mejía-Salazar, J. R., E-mail: jrmejia3146@gmail.com [Instituto de Física de São Carlos, Universidade de São Paulo, CP 369, 13560-970 São Carlos, SP (Brazil); Moncada-Villa, E.; Porras-Montenegro, N. [Departamento de Física, Universidad del Valle, AA 25360, Cali (Colombia)

    2016-07-18

    We propose a way to enhance the transverse magneto-optical Kerr effect, by the excitation of resonant tunneling modes, in subwavelength trilayer structures featuring a dielectric slab sandwiched between two magneto-optical metallic layers. Depending on the magneto-optical layer widths, the proposed system may exhibit an extraordinary transverse magneto-optical Kerr effect, which makes it very attractive for the design and engineering of thin-film magneto-optical-based devices for future photonic circuits or fiber optical-communication systems.

  14. Tunneling works. Tunnel koji

    Energy Technology Data Exchange (ETDEWEB)

    Higo, M [Hazam Gumi, Ltd., Tokyo (Japan)

    1991-10-25

    A mountain tunneling method for rock-beds used to be applied mainly to construction works in the mountains under few restrictions by environmental problems. However, construction works near residential sreas have been increasing. There are such enviromental problems due to tunneling works as vibration, noise, lowering of ground-water level, and influences on other structures. This report mainly describes the measurement examples of vibration and noise accompanied with blasting and the effects of the measures to lessen such influences. When the tunneling works for the railroad was carried out on the natural ground mainly composed of basalt, vibration of the test blasting was measured at three stations with piezoelectric accelerometers. Then, ordinary blasting, mutistage blasting, and ABM blasting methods were used properly besed on the above results, and only a few complaints were made. In the different works, normal noise and low-frequency sound were mesured at 22 stations around the pit mouth. As countermeasures for noise, sound-proof sheets, walls, and single and double doors were installed and foundto be effective. 1 ref., 6 figs., 1 tab.

  15. Different shape normal metal interlayers between niobium based SIS junctions and niobium titanium nitride leads and their influence on the electron temperature

    International Nuclear Information System (INIS)

    Selig, S; Westig, M P; Jacobs, K; Honingh, C E

    2014-01-01

    In this paper we demonstrate the reduction of heating in a niobium superconductor-insulator-superconductor (SIS) junction with aluminum-oxide tunnel barrier embedded in a niobium-titanium-nitride circuit. Nonequilibrium quasiparticles which are created due to the Andreev trap at the interface between the niobium and the niobium-titanium-nitride layers are relaxed by inserting a normal-metal conductor of gold between these two layers. In an earlier work we explained the observed relaxation of nonequilibrium quasiparticles due to the geometrically assisted cooling effect. In this paper we investigate this cooling effect in dependence of the normal-metal layer shape and size. We expect that an adapted normal-metal layer is necessary for implementation in practical terahertz SIS heterodyne mixer circuits. We observe in DC-measurements of a large number of devices a clear relation between the volume of the gold layer and the effective electron temperature in the device. Our central finding is that the shape of the gold layer does not influence the cooling provided that the volume is sufficient.

  16. Interfacial thermal resistance at low temperature between a superconductive metal and a normally resistive metal

    International Nuclear Information System (INIS)

    Fouaidy, M.

    1996-01-01

    This lecture is the preliminary of a research program on superconducting cavity resonators. The lecture topic aims at characterizing thermal conduction (and hence thermal losses) at the interface of two metals, one of them being superconductive. Some major works (Barnes and Dillinger, Little) are explained and discussed. (D.L.)

  17. Meissner effect in diffusive normal metal/d-wave superconductor junctions

    NARCIS (Netherlands)

    Yokoyama, Takehito; Tanaka, Yukio; Golubov, Alexandre Avraamovitch; Inoue, Jun-ichiro; Asano, Yasuhiro

    2005-01-01

    The Meissner effect in diffusive normal metal/insulator/d-wave superconductor junctions is studied theoretically in the framework of the Usadel equation under the generalized boundary condition. The effect of midgap Andreev resonant states (MARS) formed at the interface of d-wave superconductor is

  18. Influence of magnetic impurities on charge transport in diffusive-normal-metal/superconductor junctions

    NARCIS (Netherlands)

    Yokoyama, T.; Tanaka, Y.; Golubov, Alexandre Avraamovitch; Inoue, J.; Asano, Y.

    2005-01-01

    Charge transport in the diffusive normal metal (DN)/insulator/s- and d-wave superconductor junctions is studied in the presence of magnetic impurities in DN in the framework of the quasiclassical Usadel equations with the generalized boundary conditions. The cases of s- and d-wave superconducting

  19. Theory of thermal and charge transport in diffusive normal metal / superconductor junctions

    NARCIS (Netherlands)

    Yokoyama, T.; Tanaka, Y.; Golubov, Alexandre Avraamovitch; Asano, Y.

    2005-01-01

    Thermal and charge transport in diffusive normal metal (DN)/insulator/s-, d-, and p-wave superconductor junctions are studied based on the Usadel equation with the Nazarov's generalized boundary condition. We derive a general expression of the thermal conductance in unconventional superconducting

  20. Effect of quantum tunneling on spin Hall magnetoresistance.

    Science.gov (United States)

    Ok, Seulgi; Chen, Wei; Sigrist, Manfred; Manske, Dirk

    2017-02-22

    We present a formalism that simultaneously incorporates the effect of quantum tunneling and spin diffusion on the spin Hall magnetoresistance observed in normal metal/ferromagnetic insulator bilayers (such as Pt/Y 3 Fe 5 O 12 ) and normal metal/ferromagnetic metal bilayers (such as Pt/Co), in which the angle of magnetization influences the magnetoresistance of the normal metal. In the normal metal side the spin diffusion is known to affect the landscape of the spin accumulation caused by spin Hall effect and subsequently the magnetoresistance, while on the ferromagnet side the quantum tunneling effect is detrimental to the interface spin current which also affects the spin accumulation. The influence of generic material properties such as spin diffusion length, layer thickness, interface coupling, and insulating gap can be quantified in a unified manner, and experiments that reveal the quantum feature of the magnetoresistance are suggested.

  1. Low frequency elastic properties of glasses at low temperatures - implications on the tunneling model

    International Nuclear Information System (INIS)

    Raychaudhuri, A.K.; Hunklinger, S.

    1984-01-01

    We have measured the low frequency elastic properties of dielectric, normal conducting and superconducting metallic glasses at audio-frequencies (fapprox.=1 kHz) and temperatures down to 10 mK. Our results are discussed in the framework of the tunneling model of glasses. The major assumption of the tunneling model regarding the tunneling states with long relaxation time has been verified, but discrepancies to high frequency measurements have been found. In addition, our experiments on superconducting metallic glasses seem to indicate that the present treatment of the electron-tunneling state interaction is not sufficient. (orig.)

  2. Evidence of a Normal-State Pseudogap in Bulk Superconducting Tunneling Junctions of YBa2Cu3O7-δ

    Directory of Open Access Journals (Sweden)

    Leandro Guerra

    1999-12-01

    Full Text Available Planar contact tunneling experiments have been performed on bulk superconducting tunneling junctions of YBa2Cu3O7-δ in the temperature range 77 -295K. A clear depression in the conductance curves measured, attributed to the pseudogap, has been observed in temperatures above Tc (approx. 90K determined from dc resistivity measurements before disappearing at T*=275K. The width of the pseudogap has been quantitatively measured as Dps, ave = 25.6meV from the differential conductance plots. These results agree with the current understanding of the phenomenology and nature of this pseudogap, namely: (I the pseudogap value is relatively temperature-independent; (2 the superconducting gap and the pseudogap have the same d-wave nature; and (3 the superconducting gap evolves from the pseudogap.

  3. Characterization of wear debris from metal-on-metal hip implants during normal wear versus edge-loading conditions.

    Science.gov (United States)

    Kovochich, Michael; Fung, Ernest S; Donovan, Ellen; Unice, Kenneth M; Paustenbach, Dennis J; Finley, Brent L

    2018-04-01

    Advantages of second-generation metal-on-metal (MoM) hip implants include low volumetric wear rates and the release of nanosized wear particles that are chemically inert and readily cleared from local tissue. In some patients, edge loading conditions occur, which result in higher volumetric wear. The objective of this study was to characterize the size, morphology, and chemistry of wear particles released from MoM hip implants during normal (40° angle) and edge-loading (65° angle with microseparation) conditions. The mean primary particle size by volume under normal wear was 35 nm (range: 9-152 nm) compared with 95 nm (range: 6-573 nm) under edge-loading conditions. Hydrodynamic diameter analysis by volume showed that particles from normal wear were in the nano- (edge-loading conditions generated particles that ranged from Edge-loading conditions generated more elongated particles (4.5%) (aspect ratio ≥ 2.5) and more CoCr alloy particles (9.3%) compared with normal wear conditions (1.3% CoCr particles). By total mass, edge-loading particles contained approximately 640-fold more cobalt than normal wear particles. Our findings suggest that high wear conditions are a potential risk factor for adverse local tissue effects in MoM patients who experience edge loading. This study is the first to characterize both the physical and chemical characteristics of MoM wear particles collected under normal and edge-loading conditions. © 2017 Wiley Periodicals, Inc. J Biomed Mater Res Part B: Appl Biomater, 106B: 986-996, 2018. © 2017 Wiley Periodicals, Inc.

  4. Features of carrier tunneling between the silicon valence band and metal in devices based on the Al/high-K oxide/SiO_2/Si structure

    International Nuclear Information System (INIS)

    Vexler, M. I.; Grekhov, I. V.

    2016-01-01

    The features of electron tunneling from or into the silicon valence band in a metal–insulator–semiconductor system with the HfO_2(ZrO_2)/SiO_2 double-layer insulator are theoretically analyzed for different modes. It is demonstrated that the valence-band current plays a less important role in structures with HfO_2(ZrO_2)/SiO_2 than in structures containing only silicon dioxide. In the case of a very wide-gap high-K oxide ZrO_2, nonmonotonic behavior related to tunneling through the upper barrier is predicted for the valence-band–metal current component. The use of an insulator stack can offer certain advantages for some devices, including diodes, bipolar tunnel-emitter transistors, and resonant-tunneling diodes, along with the traditional use of high-K insulators in a field-effect transistor.

  5. Energy transfer between two vacuum-gapped metal plates: Coulomb fluctuations and electron tunneling

    Science.gov (United States)

    Zhang, Zu-Quan; Lü, Jing-Tao; Wang, Jian-Sheng

    2018-05-01

    Recent experimental measurements for near-field radiative heat transfer between two bodies have been able to approach the gap distance within 2 nm , where the contributions of Coulomb fluctuation and electron tunneling are comparable. Using the nonequilibrium Green's function method in the G0W0 approximation, based on a tight-binding model, we obtain for the energy current a Caroli formula from the Meir-Wingreen formula in the local equilibrium approximation. Also, the Caroli formula is consistent with the evanescent part of the heat transfer from the theory of fluctuational electrodynamics. We go beyond the local equilibrium approximation to study the energy transfer in the crossover region from electron tunneling to Coulomb fluctuation based on a numerical calculation.

  6. A graphene solution to conductivity mismatch: spin injection from ferromagnetic metal/graphene tunnel contacts into silicon

    Science.gov (United States)

    van't Erve, Olaf

    2014-03-01

    New paradigms for spin-based devices, such as spin-FETs and reconfigurable logic, have been proposed and modeled. These devices rely on electron spin being injected, transported, manipulated and detected in a semiconductor channel. This work is the first demonstration on how a single layer of graphene can be used as a low resistance tunnel barrier solution for electrical spin injection into Silicon at room temperature. We will show that a FM metal / monolayer graphene contact serves as a spin-polarized tunnel barrier which successfully circumvents the classic metal / semiconductor conductivity mismatch issue for electrical spin injection. We demonstrate electrical injection and detection of spin accumulation in Si above room temperature, and show that the corresponding spin lifetimes correlate with the Si carrier concentration, confirming that the spin accumulation measured occurs in the Si and not in interface trap states. An ideal tunnel barrier should exhibit several key material characteristics: a uniform and planar habit with well-controlled thickness, minimal defect / trapped charge density, a low resistance-area product for minimal power consumption, and compatibility with both the FM metal and semiconductor, insuring minimal diffusion to/from the surrounding materials at temperatures required for device processing. Graphene, offers all of the above, while preserving spin injection properties, making it a compelling solution to the conductivity mismatch for spin injection into Si. Although Graphene is very conductive in plane, it exhibits poor conductivity perpendicular to the plane. Its sp2 bonding results in a highly uniform, defect free layer, which is chemically inert, thermally robust, and essentially impervious to diffusion. The use of a single monolayer of graphene at the Si interface provides a much lower RA product than any film of an oxide thick enough to prevent pinholes (1 nm). Our results identify a new route to low resistance-area product spin

  7. Resonant tunnel magnetoresistance in a double magnetic tunnel junction

    KAUST Repository

    Useinov, Arthur; Useinov, Niazbeck Kh H; Tagirov, Lenar R.; Kosel, Jü rgen

    2011-01-01

    We present quasi-classical approach to calculate a spin-dependent current and tunnel magnetoresistance (TMR) in double magnetic tunnel junctions (DMTJ) FML/I/FMW/I/FMR, where the magnetization of the middle ferromagnetic metal layer FMW can

  8. Geochemical Model And Normalization For Heavy Metals In The Bottom Sediments, Dubai, UAE.

    OpenAIRE

    El Sammak, A.A. [عمرو عبدالعزيز السماك

    1999-01-01

    Dubai creek can be considered as the focal point of Dubai. It has great importance for trading and aesthetic values. Total and leachable heavy metals (Cd, Co, Ni, Pb and Zn), organic carbon and total carbonate were studied in the bottom sediments of the creek. Pollution Load Index, statistical analysis, were used in order to quantify the pollution load as well as to discriminate the data into significant groups. Normalization of the data using organic carbon and total carbonate was done in or...

  9. The crossover between tunnel and hopping conductivity in granulated films of noble metals

    Science.gov (United States)

    Kavokin, Alexey; Kutrovskaya, Stella; Kucherik, Alexey; Osipov, Anton; Vartanyan, Tigran; Arakelyan, Sergey

    2017-11-01

    The conductivity of thin films composed by clusters of gold and silver nanoparticles has been studies in a wide range of temperatures. The switch from a temperature independence to an exponential thermal dependence of the conductivity manifests the crossover between the tunnel and thermally activated hopping regimes of the electronic transport at the temperature of 60 °C. The characteristic thermal activation energy that governs hopping of electrons between nanoparticles is estimated as 1.3 eV. We have achieved a good control of the composition and thicknesses of nano-cluster films by use of the laser ablation method in colloidal solutions.

  10. The energy spectrum of electromagnetic normal modes in dissipative media: modes between two metal half spaces

    International Nuclear Information System (INIS)

    Sernelius, Bo E

    2008-01-01

    The energy spectrum of electromagnetic normal modes plays a central role in the theory of the van der Waals and Casimir interaction. Here we study the modes in connection with the van der Waals interaction between two metal half spaces. Neglecting dissipation leads to distinct normal modes with real-valued frequencies. Including dissipation seems to have the effect that these distinct modes move away from the real axis into the complex frequency plane. The summation of the zero-point energies of these modes render a complex-valued result. Using the contour integration, resulting from the use of the generalized argument principle, gives a real-valued and different result. We resolve this contradiction and show that the spectrum of true normal modes forms a continuum with real frequencies

  11. Source identification, geochemical normalization and influence factors of heavy metals in Yangtze River Estuary sediment.

    Science.gov (United States)

    Sun, Xueshi; Fan, Dejiang; Liu, Ming; Tian, Yuan; Pang, Yue; Liao, Huijie

    2018-06-18

    Sediment samples, including 40 surface samples and 12 sediment cores, were collected from 52 stations of the Yangtze River Estuary (YRE) in 2015 and 2016. The 95% linear prediction intervals (LPI) and principal components analysis (PCA), were conducted to evaluate the metal sources and grain-size effect (GSE). The in situ physico-chemical properties of pH, Eh, DO, salinity, temperature and turbidity were combined to elucidate the relationships between environmental factors and the fate of heavy metals in the river-estuary-shelf system. This study indicates a decreasing trend of metals in sediments from the estuary towards the adjacent shelf and the river channel and that Zn, Cu and Cr are mainly derived from natural processes throughout the catchment, whereas Pb appears to have anthropogenic inputs via atmospheric deposition. Furthermore, considering the best fit regression lines between the concentrations of Al and heavy metals as well as the deficiencies of the conventional C elements /C Al method, we introduce an approach (Al-SN: Al-scope normalization) that can eliminate the GSE on heavy metals and be applied to other estuaries. After Al-scope normalization, the relatively constant levels of Zn, Cu and Cr that remain in sediments from the river channel to the estuary and shelf confirmed that the variation of grain size in sediments almost entirely explained the distribution patterns of sediment toxicity in the YRE, while the enrichment of Pb in estuarine sediments could be attributed to its chemical species and physico-chemical properties. The results further suggest that the relationship between grain size and spatial behavior of sediment pollutants should be given priority over the contamination assessment and provenance discrimination in estuarine or similar environments with complex sediment compositions. Copyright © 2018 Elsevier Ltd. All rights reserved.

  12. One Dimension Analytical Model of Normal Ballistic Impact on Ceramic/Metal Gradient Armor

    International Nuclear Information System (INIS)

    Liu Lisheng; Zhang Qingjie; Zhai Pengcheng; Cao Dongfeng

    2008-01-01

    An analytical model of normal ballistic impact on the ceramic/metal gradient armor, which is based on modified Alekseevskii-Tate equations, has been developed. The process of gradient armour impacted by the long rod can be divided into four stages in this model. First stage is projectile's mass erosion or flowing phase, mushrooming phase and rigid phase; second one is the formation of comminuted ceramic conoid; third one is the penetration of gradient layer and last one is the penetration of metal back-up plate. The equations of third stage have been advanced by assuming the behavior of gradient layer as rigid-plastic and considering the effect of strain rate on the dynamic yield strength

  13. One Dimension Analytical Model of Normal Ballistic Impact on Ceramic/Metal Gradient Armor

    Science.gov (United States)

    Liu, Lisheng; Zhang, Qingjie; Zhai, Pengcheng; Cao, Dongfeng

    2008-02-01

    An analytical model of normal ballistic impact on the ceramic/metal gradient armor, which is based on modified Alekseevskii-Tate equations, has been developed. The process of gradient armour impacted by the long rod can be divided into four stages in this model. First stage is projectile's mass erosion or flowing phase, mushrooming phase and rigid phase; second one is the formation of comminuted ceramic conoid; third one is the penetration of gradient layer and last one is the penetration of metal back-up plate. The equations of third stage have been advanced by assuming the behavior of gradient layer as rigid-plastic and considering the effect of strain rate on the dynamic yield strength.

  14. Detection of On-Chip Generated Weak Microwave Radiation Using Superconducting Normal-Metal SET

    Directory of Open Access Journals (Sweden)

    Behdad Jalali-Jafari

    2016-01-01

    Full Text Available The present work addresses quantum interaction phenomena of microwave radiation with a single-electron tunneling system. For this study, an integrated circuit is implemented, combining on the same chip a Josephson junction (Al/AlO x /Al oscillator and a single-electron transistor (SET with the superconducting island (Al and normal-conducting leads (AuPd. The transistor is demonstrated to operate as a very sensitive photon detector, sensing down to a few tens of photons per second in the microwave frequency range around f ∼ 100 GHz. On the other hand, the Josephson oscillator, realized as a two-junction SQUID and coupled to the detector via a coplanar transmission line (Al, is shown to provide a tunable source of microwave radiation: controllable variations in power or in frequency were accompanied by significant changes in the detector output, when applying magnetic flux or adjusting the voltage across the SQUID, respectively. It was also shown that the effect of substrate-mediated phonons, generated by our microwave source, on the detector output was negligibly small.

  15. Morphology of ductile metals eroded by a jet of spherical particles impinging at normal incidence

    Science.gov (United States)

    Veerabhadra Rao, P.; Young, S. G.; Buckley, D. H.

    1983-01-01

    Scanning electron microscopy and energy-dispersive X-ray spectroscopy are used, together with surface profile measurements, in the present morphological study of the erosion of an aluminum alloy and copper by the normal impact of spherical glass erodent particles. The morphology of the damage pattern is a manifestation of the flow pattern of erodent particles, and yields insight into the mechanisms that may be active at different stages of erosion. The simultaneous appearance of radial cracks and concentric rings is reported, together with wave crests which contain an accumulation of metallic flakes. A preliminary analysis is advanced to explain the formation of the various damage patterns observed.

  16. Fuel damage during off-normal transients in metal-fueled fast reactors

    International Nuclear Information System (INIS)

    Kramer, J.M.; Bauer, T.H.

    1990-01-01

    Fuel damage during off-normal transients is a key issue in the safety of fast reactors because the fuel pin cladding provides the primary barrier to the release of radioactive materials. Part of the Safety Task of the Integral Fast Reactor Program is to provide assessments of the damage and margins to failure for metallic fuels over the wide range of transients that must be considered in safety analyses. This paper reviews the current status of the analytical and experimental programs that are providing the bases for these assessments. 13 refs., 2 figs

  17. Large enhancement of thermoelectric effects in a tunneling-coupled parallel DQD-AB ring attached to one normal and one superconducting lead

    Science.gov (United States)

    Yao, Hui; Zhang, Chao; Li, Zhi-Jian; Nie, Yi-Hang; Niu, Peng-bin

    2018-05-01

    We theoretically investigate the thermoelectric properties in a tunneling-coupled parallel DQD-AB ring attached to one normal and one superconducting lead. The role of the intrinsic and extrinsic parameters in improving thermoelectric properties is discussed. The peak value of figure of merit near gap edges increases with the asymmetry parameter decreasing, particularly, when asymmetry parameter is less than 0.5, the figure of merit near gap edges rapidly rises. When the interdot coupling strengh is less than the superconducting gap the thermopower spectrum presents a single-platform structure. While when the interdot coupling strengh is larger than the gap, a double-platform structure appears in thermopower spectrum. Outside the gap the peak values of figure of merit might reach the order of 102. On the basis of optimizing internal parameters the thermoelectric conversion efficiency of the device can be further improved by appropriately matching the total magnetic flux and the flux difference between two subrings.

  18. Theoretical consideration of spin-polarized resonant tunneling in magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Mu Haifeng; Zhu Zhengang; Zheng Qingrong; Jin Biao; Wang Zhengchuan; Su Gang

    2004-01-01

    A recent elegant experimental realization [S. Yuasa et al., Science 297 (2002) 234] of the spin-polarized resonant tunneling in magnetic tunnel junctions is interpreted in terms of a two-band model. It is shown that the tunnel magnetoresistance (TMR) decays oscillatorily with the thickness of the normal metal (NM) layer, being fairly in agreement with the experimental observation. The tunnel conductance is found to decay with slight oscillations with the increase of the NM layer thickness, which is also well consistent with the experiment. In addition, when the magnetizations of both ferromagnet electrodes are not collinearly aligned, TMR is found to exhibit sharp resonant peaks at some particular thickness of the NM layer. The peaked TMR obeys nicely a Gaussian distribution against the relative orientation of the magnetizations

  19. Quantum size effects on spin-transfer torque in a double barrier magnetic tunnel junction with a nonmagnetic-metal (semiconductor) spacer

    International Nuclear Information System (INIS)

    Daqiq, Reza; Ghobadi, Nader

    2016-01-01

    We study the quantum size effects of an MgO-based double barrier magnetic tunnel junction with a nonmagnetic-metal (DBMTJ-NM) (semiconductor (DBMTJ-SC)) spacer on the charge current and the spin-transfer torque (STT) components using non-equilibrium Green's function (NEGF) formalism. The results show oscillatory behavior due to the resonant tunneling effect depending on the structure parameters. We find that the charge current and the STT components in the DBMTJ-SC demonstrate the magnitude enhancement in comparison with the DBMTJ-NM. The bias dependence of the STT components in a DBMTJ-NM shows different behavior in comparison with spin valves and conventional MTJs. Therefore, by choosing a specific SC spacer with suitable thickness in a DBMTJ the charge current and the STT components significantly increase so that one can design a device with high STT and faster magnetization switching. - Highlights: • The quantum size effects are studied in double barrier magnetic tunnel junctions. • Spin torque (ST) components oscillate for increasing of middle spacer thicknesses. • Due to the resonant tunneling in the quantum well, oscillations have appeared. • By replacement a metal spacer with a semiconductor (ZnO) ST has increased. • The ST components vs. bias show gradually decreasing unlike spin valves or MTJs.

  20. Quantum size effects on spin-transfer torque in a double barrier magnetic tunnel junction with a nonmagnetic-metal (semiconductor) spacer

    Energy Technology Data Exchange (ETDEWEB)

    Daqiq, Reza; Ghobadi, Nader

    2016-07-15

    We study the quantum size effects of an MgO-based double barrier magnetic tunnel junction with a nonmagnetic-metal (DBMTJ-NM) (semiconductor (DBMTJ-SC)) spacer on the charge current and the spin-transfer torque (STT) components using non-equilibrium Green's function (NEGF) formalism. The results show oscillatory behavior due to the resonant tunneling effect depending on the structure parameters. We find that the charge current and the STT components in the DBMTJ-SC demonstrate the magnitude enhancement in comparison with the DBMTJ-NM. The bias dependence of the STT components in a DBMTJ-NM shows different behavior in comparison with spin valves and conventional MTJs. Therefore, by choosing a specific SC spacer with suitable thickness in a DBMTJ the charge current and the STT components significantly increase so that one can design a device with high STT and faster magnetization switching. - Highlights: • The quantum size effects are studied in double barrier magnetic tunnel junctions. • Spin torque (ST) components oscillate for increasing of middle spacer thicknesses. • Due to the resonant tunneling in the quantum well, oscillations have appeared. • By replacement a metal spacer with a semiconductor (ZnO) ST has increased. • The ST components vs. bias show gradually decreasing unlike spin valves or MTJs.

  1. Quasiparticle energies and lifetimes in a metallic chain model of a tunnel junction.

    Science.gov (United States)

    Szepieniec, Mark; Yeriskin, Irene; Greer, J C

    2013-04-14

    As electronics devices scale to sub-10 nm lengths, the distinction between "device" and "electrodes" becomes blurred. Here, we study a simple model of a molecular tunnel junction, consisting of an atomic gold chain partitioned into left and right electrodes, and a central "molecule." Using a complex absorbing potential, we are able to reproduce the single-particle energy levels of the device region including a description of the effects of the semi-infinite electrodes. We then use the method of configuration interaction to explore the effect of correlations on the system's quasiparticle peaks. We find that when excitations on the leads are excluded, the device's highest occupied molecular orbital and lowest unoccupied molecular orbital quasiparticle states when including correlation are bracketed by their respective values in the Hartree-Fock (Koopmans) and ΔSCF approximations. In contrast, when excitations on the leads are included, the bracketing property no longer holds, and both the positions and the lifetimes of the quasiparticle levels change considerably, indicating that the combined effect of coupling and correlation is to alter the quasiparticle spectrum significantly relative to an isolated molecule.

  2. Flux-quantization effects in disordered normal metal rings and superconducting networks

    International Nuclear Information System (INIS)

    Li, Qiming.

    1989-01-01

    The effects of the magnetic flux on the properties of disordered normal metal rings and bond or site diluted two-dimensional superconducting networks are investigated theoretically, with an emphasis on the quantum coherence of the electrons and the localization nature in the disordered systems. The conductance of disordered metal rings in magnetic field is obtained via the Landauer's formula through calculations of the localization length L c . The important role of the ensemble averaging and the self-averaging to obtain the half-flux-quantum h/2e conductance oscillation is demonstrated unambiguously in both rings of a strictly one-dimensional geometry and rings with a finite width. The amplitude of the localization length oscillation is found to follow a universal relation for all the numerical data: Δ(L c /L) = α(L c /L) 2 . L is the radius of the ring. The expected universal conductance fluctuations are observed for L c /L ∼ 1. For L c > L, much larger oscillation amplitudes are obtained. In the case of two-dimensional site or bond percolation superconducting networks, the nature of the eigenstates and the effects on the superconducting-to-normal phase boundary is examined by finite-size transfer matrix calculations within the mean-field Ginzburg-Landau theory of second order phase transitions

  3. Proximity-induced superconductivity in all-silicon superconductor /normal-metal junctions

    Science.gov (United States)

    Chiodi, F.; Duvauchelle, J.-E.; Marcenat, C.; Débarre, D.; Lefloch, F.

    2017-07-01

    We have realized laser-doped all-silicon superconducting (S)/normal metal (N) bilayers of tunable thickness and dopant concentration. We observed a strong reduction of the bilayers' critical temperature when increasing the normal metal thickness, a signature of the highly transparent S/N interface associated to the epitaxial sharp laser doping profile. We extracted the interface resistance by fitting with the linearized Usadel equations, demonstrating a reduction of 1 order of magnitude from previous superconductor/doped Si interfaces. In this well-controlled crystalline system we exploited the low-resistance S/N interfaces to elaborate all-silicon lateral SNS junctions with long-range proximity effect. Their dc transport properties, such as the critical and retrapping currents, could be well understood in the diffusive regime. Furthermore, this work led to the estimation of important parameters in ultradoped superconducting Si, such as the Fermi velocity, the coherence length, or the electron-phonon coupling constant, fundamental to conceive all-silicon superconducting electronics.

  4. Determination of Carrier Polarity in Fowler-Nordheim Tunneling and Evidence of Fermi Level Pinning at the Hexagonal Boron Nitride/Metal Interface.

    Science.gov (United States)

    Hattori, Yoshiaki; Taniguchi, Takashi; Watanabe, Kenji; Nagashio, Kosuke

    2018-04-11

    Hexagonal boron nitride (h-BN) is an important insulating substrate for two-dimensional (2D) heterostructure devices and possesses high dielectric strength comparable to SiO 2 . Here, we report two clear differences in their physical properties. The first one is the occurrence of Fermi level pinning at the metal/h-BN interface, unlike that at the metal/SiO 2 interface. The second one is that the carrier of Fowler-Nordheim (F-N) tunneling through h-BN is a hole, which is opposite to an electron in the case of SiO 2 . These unique characteristics are verified by I- V measurements in the graphene/h-BN/metal heterostructure device with the aid of a numerical simulation, where the barrier height of graphene can be modulated by a back gate voltage owing to its low density of states. Furthermore, from a systematic investigation using a variety of metals, it is confirmed that the hole F-N tunneling current is a general characteristic because the Fermi levels of metals are pinned in the small energy range around ∼3.5 eV from the top of the conduction band of h-BN, with a pinning factor of 0.30. The accurate energy band alignment at the h-BN/metal interface provides practical knowledge for 2D heterostructure devices.

  5. Electronic tunneling currents at optical frequencies

    Science.gov (United States)

    Faris, S. M.; Fan, B.; Gustafson, T. K.

    1975-01-01

    Rectification characteristics of nonsuperconducting metal-barrier-metal junctions as deduced from electronic tunneling theory have been observed experimentally for optical frequency irradiation of the junction.

  6. Correlation study of trace metals in malignant and normal breast tissues by AAS technique

    International Nuclear Information System (INIS)

    Rahman, S.

    2012-01-01

    The study reports the application of atomic absorption spectrophotometry (AAS) for quantification of Fe, Cu and Zn in forty one formalin-fixed biopsy breast carcinoma tissue and adjoining fifteen normal tissue samples. These tissues samples were of category two breast carcinoma patients and of normal subjects. The qualitative comparison between the elements levels measured in the two types of specimens suggests significant elevation of these metals in the histopathological samples of carcinoma tissue. The samples were collected from women aged 19-51 years. Most of the patients belong to urban areas of Pakistan and middle to high socioeconomic status with the exception of few. Findings of study depicts that these elements have an important role in the initiation and development of carcinoma as consistent pattern of elevation for Fe, Cu and Zn was observed. The results showed the excessive accumulation of Fe (166.9 mg/L) in tissue samples of breast carcinoma patients (p < 0.01) than that in normal tissues samples (23.5 mg/L). In order to validate our method of analysis certified reference material Muscle Tissue Lyophilised (IAEA) MA-M-2/TM was analyzed for Fe, Cu and Zn. Determined concentrations were in good agreement with certified levels. The concentration distribution of trace elements Cu, Zn and Fe measured in the malignant tissues were found to be higher when compared to benign tissues, indicating the involvement of these metals in the breast malignancy. Results also indicate that excess iron may play a role in breast carcinogenesis. (Orig./A.B.)

  7. Development of Geometry Normalized Electromagnetic System (GNES) instrument for metal defect detection

    Science.gov (United States)

    Zakaria, Zakaria; Surbakti, Muhammad Syukri; Syahreza, Saumi; Mat Jafri, Mohd. Zubir; Tan, Kok Chooi

    2017-10-01

    It has been already made, calibrated and tested a geometry normalized electromagnetic system (GNES) for metal defect examination. The GNES has an automatic data acquisition system which supporting the efficiency and accuracy of the measurement. The data will be displayed on the computer monitor as a graphic display then saved automatically in the Microsoft Excel format. The transmitter will transmit the frequency pair (FP) signals i.e. 112.5 Hz and 337.5 Hz; 112.5 Hz and 1012.5 Hz; 112.5 Hz and 3037.5 Hz; 337.5 Hz and 1012.5 Hz; 337.5 Hz and 3037.5 Hz. Simultaneous transmissions of two electromagnetic waves without distortions by the transmitter will induce an eddy current in the metal. This current, in turn, will produce secondary electromagnetic fields which are measured by the receiver together with the primary fields. Measurement of percent change of a vertical component of the fields will give the percent response caused by the metal or the defect. The response examinations were performed by the models with various type of defect for the master curves. The materials of samples as a plate were using Aluminum, Brass, and Copper. The more of the defects is the more reduction of the eddy current response. The defect contrasts were tended to decrease when the more depth of the defect position. The magnitude and phase of the eddy currents will affect the loading on the coil thus its impedance. The defect must interrupt the surface eddy current flow to be detected. Defect lying parallel to the current path will not cause any significant interruption and may not be detected. The main factors which affect the eddy current response are metal conductivity, permeability, frequency, and geometry.

  8. Combined Cataract Extraction With Pars Plana Vitrectomy and Metallic Intraocular Foreign Body Removal Through Sclerocorneal Tunnel Using a Novel "Magnet Handshake" Technique.

    Science.gov (United States)

    Dhoble, Pankaja; Khodifad, Ashish

    2018-01-01

    To study the outcomes of combined cataract extraction with pars plana vitrectomy (PPV) and metallic intraocular foreign body (IOFB) removal through a sclerocorneal tunnel using the "magnetic handshake" technique. A retrospective review. Retrospective review of case records of 14 patients from 2010 to 2016 with metallic IOFB and traumatic cataract was performed. Cataract extraction was combined with PPV. Two intraocular magnets (IOMs) introduced through 20-gauge vitrectomy port and sclerocorneal tunnel helped achieve safe delivery of IOFB outside the globe by the "magnetic handshake" technique. All patients were males with a mean age of 33.04 years. A final best corrected visual acuity (BCVA) of 20/60 or better was noted in 10 (71.42%) of 14 patients. Final reattachment with more than 1 surgery was achieved in 13 (92.85%) patients. Postoperative complications included retinal detachment (RD) and phthisis bulbi in 1 (14.28%) patient each. Combined cataract extraction with PPV and metallic IOFB removal through sclerocorneal tunnel using the "magnet handshake" technique gives good visual and surgical outcomes. Copyright 2017 Asia-Pacific Academy of Ophthalmology.

  9. Macroscopic quantum tunneling in Josephson tunnel junctions and Coulomb blockade in single small tunnel junctions

    International Nuclear Information System (INIS)

    Cleland, A.N.

    1991-04-01

    Experiments investigating the process of macroscopic quantum tunneling in a moderately-damped, resistively shunted, Josephson junction are described, followed by a discussion of experiments performed on very small capacitance normal-metal tunnel junctions. The experiments on the resistively-shunted Josephson junction were designed to investigate a quantum process, that of the tunneling of the Josephson phase variable under a potential barrier, in a system in which dissipation plays a major role in the dynamics of motion. All the parameters of the junction were measured using the classical phenomena of thermal activation and resonant activation. Theoretical predictions are compared with the experimental results, showing good agreement with no adjustable parameters; the tunneling rate in the moderately damped (Q ∼ 1) junction is seen to be reduced by a factor of 300 from that predicted for an undamped junction. The phase is seen to be a good quantum-mechanical variable. The experiments on small capacitance tunnel junctions extend the measurements on the larger-area Josephson junctions from the region in which the phase variable has a fairly well-defined value, i.e. its wavefunction has a narrow width, to the region where its value is almost completely unknown. The charge on the junction becomes well-defined and is predicted to quantize the current through the junction, giving rise to the Coulomb blockade at low bias. I present the first clear observation of the Coulomb blockade in single junctions. The electrical environment of the tunnel junction, however, strongly affects the behavior of the junction: higher resistance leads are observed to greatly sharpen the Coulomb blockade over that seen with lower resistance leads. I present theoretical descriptions of how the environment influences the junctions; comparisons with the experimental results are in reasonable agreement

  10. Channel selective tunnelling through a nanographene assembly

    International Nuclear Information System (INIS)

    Wong, H S; Durkan, C; Feng, X; Müllen, K; Chandrasekhar, N

    2012-01-01

    We report selective tunnelling through a nanographene intermolecular tunnel junction achieved via scanning tunnelling microscope tip functionalization with hexa-peri-hexabenzocoronene (HBC) molecules. This leads to an offset in the alignment between the energy levels of the tip and the molecular assembly, resulting in the imaging of a variety of distinct charge density patterns in the HBC assembly, not attainable using a bare metallic tip. Different tunnelling channels can be selected by the application of an electric field in the tunnelling junction, which changes the condition of the HBC on the tip. Density functional theory-based calculations relate the imaged HBC patterns to the calculated molecular orbitals at certain energy levels. These patterns bear a close resemblance to the π-orbital states of the HBC molecule calculated at the relevant energy levels, mainly below the Fermi energy of HBC. This correlation demonstrates the ability of an HBC functionalized tip as regards accessing an energy range that is restricted to the usual operating bias range around the Fermi energy with a normal metallic tip at room temperature. Apart from relating to molecular orbitals, some patterns could also be described in association with the Clar aromatic sextet formula. Our observations may help pave the way towards the possibility of controlling charge transport between organic interfaces. (paper)

  11. Theory of emission spectra from metal films irradiated by low energy electrons near normal incidence

    International Nuclear Information System (INIS)

    Kretschmann, E.; Callcott, T.A.; Arakawa, E.T.

    1980-01-01

    The emission spectrum produced by low energy electrons incident on a rough metal surface has been calculated for a roughness auto-correlation function containing a prominent peak at a high wave vector. For low energy electrons near normal incidence, the high wavevector peak dominates the roughness coupled surface plasmon radiation (RCSPR) process. The calculation yields estimates of the ratio of RCSPR to transition radiation, the dependence of emission intensity on electron energy and the shape and position of the RCSPR peak. The most interesting result is that the high-wavevector roughness can split the RCSPR radiation into peaks lying above and below the asymptotic surface plasma frequency. The results are compared with data from Ag in the following paper. (orig.)

  12. Influence of crystal field excitations on thermal and electrical resistivity of normal rare-earth metals

    Energy Technology Data Exchange (ETDEWEB)

    Durczewski, K.; Gajek, Z.; Mucha, J. [Institute of Low Temperature and Structure Research, Polish Academy of Sciences, Wroclaw (Poland)

    2014-11-15

    A simple formula describing the influence of the crystalline electric field free-ion excitations on the temperature dependence of the contribution of the s-f scattering to the thermal resistivity of normal rare-earth metals is presented. The corresponding formula for the electrical resistivity is also given and compared to the one being currently used. Theoretical electron-phonon scattering contributions derived in earlier papers and constant impurity scattering contributions are added to the derived s-f contribution formulae in order to fit the total electrical and thermal resistivity represented as functions of the temperature to experimental dependences on the temperature for DyIn{sub 3} and in this way to manifest applicability of the derived formulae to real materials. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  13. Influence of crystal field excitations on thermal and electrical resistivity of normal rare-earth metals

    International Nuclear Information System (INIS)

    Durczewski, K.; Gajek, Z.; Mucha, J.

    2014-01-01

    A simple formula describing the influence of the crystalline electric field free-ion excitations on the temperature dependence of the contribution of the s-f scattering to the thermal resistivity of normal rare-earth metals is presented. The corresponding formula for the electrical resistivity is also given and compared to the one being currently used. Theoretical electron-phonon scattering contributions derived in earlier papers and constant impurity scattering contributions are added to the derived s-f contribution formulae in order to fit the total electrical and thermal resistivity represented as functions of the temperature to experimental dependences on the temperature for DyIn 3 and in this way to manifest applicability of the derived formulae to real materials. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. Macroscopic quantum tunneling in Josephson tunnel junctions and Coulomb blockade in single small tunnel junctions

    International Nuclear Information System (INIS)

    Cleland, A.N.

    1991-01-01

    Experiments investigated the process of macroscopic quantum tunneling in a moderately-damped, resistively shunted, Josephson junction are described, followed by a discussion of experiments performed on very-small-capacitance normal-metal tunnel junctions. The experiments on the resistively-shunted Josephson junction were designed to investigate a quantum process, that of the tunneling of the Josephson-phase variable under a potential barrier, in a system in which dissipation plays a major role in the dynamics of motion. All the parameters of the junction were measured using the classical phenomena of thermal activation and resonant activation. Theoretical predictions are compared with the experimental results, showing good agreement with no adjustable parameters. The experiments on small-capacitance tunnel junctions extend the measurements on the large-area Josephson junctions from the region in which the phase variable has a fairly well-defined value, i.e. its wave function has a narrow width, to the region where its value is almost completely unknown. The charge on the junction becomes well-defined and is predicted to quantize the current through the junction, giving rise to the Coulomb blockade at low bias

  15. Comparative assessment of button cells using a normalized index for potential pollution by heavy metals.

    Science.gov (United States)

    Moreno-Merino, Luis; Jiménez-Hernández, Maria Emilia; de la Losa, Almudena; Huerta-Muñoz, Virginia

    2015-09-01

    Many household batteries worldwide still end up in landfills or are incinerated due to inefficient collection and recycling schemes. Toxic heavy metals from improperly discarded button cells pose a serious risk to human health and the environment, as they can pollute air, soil and water. This paper analyses a series of button cells selected from batteries available on the retail market, and compares their polluting potential. A total of 64 batteries were subjected to chemical analyses of 19 elements - including metals and metalloids - , and energy density measurements. The samples were from four different brands of each of the four most common button cell technologies (alkaline, zinc-air, silver oxide and lithium). An energy-normalized index - the Weighted Potential Pollution Index (WPPI) - was proposed to compare the polluting potential of the different batteries. The higher the battery WPPI score, the greater the content in toxic elements and the lower the energy output. The results of the chemical composition and energy density varied depending on the construction technology of the button cells. However, significant differences in both variables were also found when comparing different brands within the same technology. The differences in WPPI values confirmed the existence of a significant margin to reduce the environmental impact of discarded button cells simply by avoiding the most polluting options. The choice of the battery with the most favourable WPPI produced a reduction in potential pollution of 3-53% for silver oxide batteries, 4-39% for alkaline, 20-28% for zinc-air and 12-26% for lithium. Comparative potential pollution could be assessed when selecting batteries using an energy-normalized index such as WPPI to reduce the environmental impact of improperly disposed button cells. Published by Elsevier B.V.

  16. Comparative assessment of button cells using a normalized index for potential pollution by heavy metals

    International Nuclear Information System (INIS)

    Moreno-Merino, Luis; Jiménez-Hernández, Maria Emilia; Losa, Almudena de la; Huerta-Muñoz, Virginia

    2015-01-01

    Many household batteries worldwide still end up in landfills or are incinerated due to inefficient collection and recycling schemes. Toxic heavy metals from improperly discarded button cells pose a serious risk to human health and the environment, as they can pollute air, soil and water. This paper analyses a series of button cells selected from batteries available on the retail market, and compares their polluting potential. A total of 64 batteries were subjected to chemical analyses of 19 elements — including metals and metalloids — , and energy density measurements. The samples were from four different brands of each of the four most common button cell technologies (alkaline, zinc-air, silver oxide and lithium). An energy-normalized index — the Weighted Potential Pollution Index (WPPI) — was proposed to compare the polluting potential of the different batteries. The higher the battery WPPI score, the greater the content in toxic elements and the lower the energy output. The results of the chemical composition and energy density varied depending on the construction technology of the button cells. However, significant differences in both variables were also found when comparing different brands within the same technology. The differences in WPPI values confirmed the existence of a significant margin to reduce the environmental impact of discarded button cells simply by avoiding the most polluting options. The choice of the battery with the most favourable WPPI produced a reduction in potential pollution of 3–53% for silver oxide batteries, 4–39% for alkaline, 20–28% for zinc-air and 12–26% for lithium. Comparative potential pollution could be assessed when selecting batteries using an energy-normalized index such as WPPI to reduce the environmental impact of improperly disposed button cells. - Highlights: • We compare the polluting potential of button cells using an energy-normalized index. • This battery index considers both chemical

  17. Comparative assessment of button cells using a normalized index for potential pollution by heavy metals

    Energy Technology Data Exchange (ETDEWEB)

    Moreno-Merino, Luis, E-mail: l.moreno@igme.es [Geological Survey of Spain, Environmental Geology Research Group, C/ Ríos Rosas 23, 28003 Madrid (Spain); Jiménez-Hernández, Maria Emilia; Losa, Almudena de la [Geological Survey of Spain, Environmental Geology Research Group, C/ Ríos Rosas 23, 28003 Madrid (Spain); Huerta-Muñoz, Virginia [Universidad Complutense de Madrid, Departamento de Geodinámica Externa, C/ José Antonio Novais, 12, Ciudad Universitaria, 28040 Madrid (Spain)

    2015-09-01

    Many household batteries worldwide still end up in landfills or are incinerated due to inefficient collection and recycling schemes. Toxic heavy metals from improperly discarded button cells pose a serious risk to human health and the environment, as they can pollute air, soil and water. This paper analyses a series of button cells selected from batteries available on the retail market, and compares their polluting potential. A total of 64 batteries were subjected to chemical analyses of 19 elements — including metals and metalloids — , and energy density measurements. The samples were from four different brands of each of the four most common button cell technologies (alkaline, zinc-air, silver oxide and lithium). An energy-normalized index — the Weighted Potential Pollution Index (WPPI) — was proposed to compare the polluting potential of the different batteries. The higher the battery WPPI score, the greater the content in toxic elements and the lower the energy output. The results of the chemical composition and energy density varied depending on the construction technology of the button cells. However, significant differences in both variables were also found when comparing different brands within the same technology. The differences in WPPI values confirmed the existence of a significant margin to reduce the environmental impact of discarded button cells simply by avoiding the most polluting options. The choice of the battery with the most favourable WPPI produced a reduction in potential pollution of 3–53% for silver oxide batteries, 4–39% for alkaline, 20–28% for zinc-air and 12–26% for lithium. Comparative potential pollution could be assessed when selecting batteries using an energy-normalized index such as WPPI to reduce the environmental impact of improperly disposed button cells. - Highlights: • We compare the polluting potential of button cells using an energy-normalized index. • This battery index considers both chemical

  18. Macroscopic Refrigeration Using Superconducting Tunnel Junctions

    Science.gov (United States)

    Lowell, Peter; O'Neil, Galen; Underwood, Jason; Zhang, Xiaohang; Ullom, Joel

    2014-03-01

    Sub-kelvin temperatures are often a prerequisite for modern scientific experiments, such as quantum information processing, astrophysical missions looking for dark energy signatures and tabletop time resolved x-ray spectroscopy. Existing methods of reaching these temperatures, such as dilution refrigerators, are bulky and costly. In order to increase the accessibility of sub-Kelvin temperatures, we have developed a new method of refrigeration using normal-metal/insulator/superconductor (NIS) tunnel junctions. NIS junctions cool the electrons in the normal metal since the hottest electrons selectively tunnel from the normal metal into the superconductor. By extending the normal metal onto a thermally isolated membrane, the cold electrons can cool the phonons through the electron-phonon coupling. When these junctions are combined with a pumped 3He system, they provide a potentially inexpensive method of reaching these temperatures. Using only three devices, each with a junction area of approximately 3,500 μm2, we have cooled a 2 cm3 Cu plate from 290 mK to 256 mK. We will present these experimental results along with recent modeling predictions that strongly suggest that further refinements will allow cooling from 300 mK to 120 mK. This work is supported by the NASA APRA program.

  19. Impact of metal nano layer thickness on tunneling oxide and memory performance of core-shell iridium-oxide nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Banerjee, W.; Maikap, S. [Thin Film Nano Tech. Lab., Department of Electronic Engineering, Chang Gung University, Tao-Yuan, Taiwan 333, Taiwan (China); Tien, T.-C. [Material Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan 310, Taiwan (China); Li, W.-C.; Yang, J.-R. [Department of Materials Science and Engineering, National Taiwan University, Taipei 106, Taiwan (China)

    2011-10-01

    The impact of iridium-oxide (IrO{sub x}) nano layer thickness on the tunneling oxide and memory performance of IrO{sub x} metal nanocrystals in an n-Si/SiO{sub 2}/Al{sub 2}O{sub 3}/IrO{sub x}/Al{sub 2}O{sub 3}/IrO{sub x} structure has been investigated. A thinner (1.5 nm) IrO{sub x} nano layer has shown better memory performance than that of a thicker one (2.5 nm). Core-shell IrO{sub x} nanocrystals with a small average diameter of 2.4 nm and a high density of {approx}2 x 10{sup 12}/cm{sup 2} have been observed by scanning transmission electron microscopy. The IrO{sub x} nanocrystals are confirmed by x-ray photoelectron spectroscopy. A large memory window of 3.0 V at a sweeping gate voltage of {+-}5 V and 7.2 V at a sweeping gate voltage of {+-} 8 V has been observed for the 1.5 nm-thick IrO{sub x} nano layer memory capacitors with a small equivalent oxide thickness of 8 nm. The electrons and holes are trapped in the core and annular regions of the IrO{sub x} nanocrystals, respectively, which is explained by Gibbs free energy. High electron and hole-trapping densities are found to be 1.5 x 10{sup 13}/cm{sup 2} and 2 x 10{sup 13}/cm{sup 2}, respectively, due to the small size and high-density of IrO{sub x} nanocrystals. Excellent program/erase endurance of >10{sup 6} cycles and good retention of 10{sup 4} s with a good memory window of >1.2 V under a small operation voltage of {+-} 5 V are obtained. A large memory size of >10 Tbit/sq. in. can be designed by using the IrO{sub x} nanocrystals. This study is not only important for the IrO{sub x} nanocrystal charge-trapping memory investigation but it will also help to design future metal nanocrystal flash memory.

  20. Impact of metal nano layer thickness on tunneling oxide and memory performance of core-shell iridium-oxide nanocrystals

    International Nuclear Information System (INIS)

    Banerjee, W.; Maikap, S.; Tien, T.-C.; Li, W.-C.; Yang, J.-R.

    2011-01-01

    The impact of iridium-oxide (IrO x ) nano layer thickness on the tunneling oxide and memory performance of IrO x metal nanocrystals in an n-Si/SiO 2 /Al 2 O 3 /IrO x /Al 2 O 3 /IrO x structure has been investigated. A thinner (1.5 nm) IrO x nano layer has shown better memory performance than that of a thicker one (2.5 nm). Core-shell IrO x nanocrystals with a small average diameter of 2.4 nm and a high density of ∼2 x 10 12 /cm 2 have been observed by scanning transmission electron microscopy. The IrO x nanocrystals are confirmed by x-ray photoelectron spectroscopy. A large memory window of 3.0 V at a sweeping gate voltage of ±5 V and 7.2 V at a sweeping gate voltage of ± 8 V has been observed for the 1.5 nm-thick IrO x nano layer memory capacitors with a small equivalent oxide thickness of 8 nm. The electrons and holes are trapped in the core and annular regions of the IrO x nanocrystals, respectively, which is explained by Gibbs free energy. High electron and hole-trapping densities are found to be 1.5 x 10 13 /cm 2 and 2 x 10 13 /cm 2 , respectively, due to the small size and high-density of IrO x nanocrystals. Excellent program/erase endurance of >10 6 cycles and good retention of 10 4 s with a good memory window of >1.2 V under a small operation voltage of ± 5 V are obtained. A large memory size of >10 Tbit/sq. in. can be designed by using the IrO x nanocrystals. This study is not only important for the IrO x nanocrystal charge-trapping memory investigation but it will also help to design future metal nanocrystal flash memory.

  1. Surface flattening processes of metal layer and their effect on transport properties of magnetic tunnel junctions with Al-N barrier

    International Nuclear Information System (INIS)

    Yoshimura, S.; Nozawa, T.; Shoyama, T.; Tsunoda, M.; Takahashi, M.

    2005-01-01

    In order to form ultrathin insulating layer in magnetic tunnel junctions (MTJs), two surface flatting processes of metal films are investigated. Oxygen-additive sputter-deposition process was applied to the bottom Cu electrode and the Al layer to be nitrided. Dry-etching process was applied for the surface treatment of lower Co-Fe layer. As a result, the surface roughness of stacked ultrathin Al layer to be nitrided is reduced from 3.2A to 1.7A, and the tunnel magnetoresistance (TMR) ratio of the MTJs increases from 1% to 26% while maintaining resistance-area product (RxA) less than 5x10 2 Ω μm 2 in the Co-Fe/Al(6A)-N/Co-Fe MTJs. We conclude that the decrease of the surface roughness of Al layer is one of the key factors to realize high performance MTJs with low RxA and high TMR ratio

  2. Superconductivity in inhomogeneous granular metals

    International Nuclear Information System (INIS)

    McLean, W.L.

    1980-01-01

    A model of elongated metal ellipsoids imbedded in a granular metal is treated by an effective medium approach to explain the observed temperature dependence of the normal-state conductivity of superconducting granular aluminum. Josephson tunneling is thus still required to account for the superconductivity. The model predicts the same kind of contrasting behavior on opposite sides of the metal-insulator transition as is found in the recent scaling treatment of Anderson localization

  3. Melt layer macroscopic erosion of tungsten and other metals under plasma heat loads simulating ITER off-normal events

    International Nuclear Information System (INIS)

    Garkusha, I.E.; Bandura, A.N.; Byrka, O.V.; Kulik, N.V.; Landman, I.; Wuerz, H.

    2002-01-01

    This paper is focused on experimental analysis of metal layer erosion and droplet splashing of tungsten and other metals under heat loads typical for ITER FEAT off-normal events,such as disruptions and VDE's. Plasma pressure gradient action on melt layer results in erosion crater formation with mountains of displaced material at the crater edge. It is shown that macroscopic motion of melt layer and surface cracking are the main factors responsible for tungsten damage. Weight loss measurements of all exposed materials demonstrate inessential contribution of evaporation process to metals erosion

  4. Spin-independent transparency of pure spin current at normal/ferromagnetic metal interface

    Science.gov (United States)

    Hao, Runrun; Zhong, Hai; Kang, Yun; Tian, Yufei; Yan, Shishen; Liu, Guolei; Han, Guangbing; Yu, Shuyun; Mei, Liangmo; Kang, Shishou

    2018-03-01

    The spin transparency at the normal/ferromagnetic metal (NM/FM) interface was studied in Pt/YIG/Cu/FM multilayers. The spin current generated by the spin Hall effect (SHE) in Pt flows into Cu/FM due to magnetic insulator YIG blocking charge current and transmitting spin current via the magnon current. Therefore, the nonlocal voltage induced by an inverse spin Hall effect (ISHE) in FM can be detected. With the magnetization of FM parallel or antiparallel to the spin polarization of pure spin currents ({{\\boldsymbol{σ }}}sc}), the spin-independent nonlocal voltage is induced. This indicates that the spin transparency at the Cu/FM interface is spin-independent, which demonstrates that the influence of spin-dependent electrochemical potential due to spin accumulation on the interfacial spin transparency is negligible. Furthermore, a larger spin Hall angle of Fe20Ni80 (Py) than that of Ni is obtained from the nonlocal voltage measurements. Project supported by the National Basic Research Program of China (Grant No. 2015CB921502), the National Natural Science Foundation of China (Grant Nos. 11474184 and 11627805), the 111 Project, China (Grant No. B13029), and the Fundamental Research Funds of Shandong University, China.

  5. All-electric-controlled spin current switching in single-molecule magnet-tunnel junctions

    Science.gov (United States)

    Zhang, Zheng-Zhong; Shen, Rui; Sheng, Li; Wang, Rui-Qiang; Wang, Bai-Gen; Xing, Ding-Yu

    2011-04-01

    A single-molecule magnet (SMM) coupled to two normal metallic electrodes can both switch spin-up and spin-down electronic currents within two different windows of SMM gate voltage. Such spin current switching in the SMM tunnel junction arises from spin-selected single electron resonant tunneling via the lowest unoccupied molecular orbit of the SMM. Since it is not magnetically controlled but all-electrically controlled, the proposed spin current switching effect may have potential applications in future spintronics.

  6. Investigation of Supramolecular Coordination Self-Assembly and Polymerization Confined on Metal Surfaces Using Scanning Tunneling Microscopy

    Science.gov (United States)

    Lin, Tao

    Organic molecules are envisioned as the building blocks for design and fabrication of functional devices in future, owing to their versatility, low cost and flexibility. Although some devices such as organic light-emitting diode (OLED) have been already applied in our daily lives, the field is still in its infancy and numerous challenges still remain. In particular, fundamental understanding of the process of organic material fabrication at a molecular level is highly desirable. This thesis focuses on the design and fabrication of supramolecular and macromolecular nanostructures on a Au(111) surface through self-assembly, polymerization and a combination of two. We used scanning tunneling microscopy (STM) as an experimental tool and Monte Carlo (MC) and kinetic Monte Carlo (KMC) simulations as theoretical tools to characterize the structures of these systems and to investigate the mechanisms of the self-assembly and polymerization processes at a single-molecular level. The results of this thesis consist of four parts as below: Part I addresses the mechanisms of two-dimensional multicomponent supramolecular self-assembly via pyridyl-Fe-terpyridyl coordination. Firstly, we studied four types of self-assembled metal-organic systems exhibiting different dimensionalities using specifically-designed molecular building blocks. We found that the two-dimensional system is under thermodynamic controls while the systems of lower dimension are under kinetic controls. Secondly, we studied the self-assembly of a series of cyclic supramolecular polygons. Our results indicate that the yield of on-surface cyclic polygon structures is very low independent of temperature and concentration and this phenomenon can be attributed to a subtle competition between kinetic and thermodynamic controls. These results shed light on thermodynamic and kinetic controls in on-surface coordination self-assembly. Part II addresses the two-dimensional supramolecular self-assembly of porphyrin

  7. Theory of charge transport in diffusive normal metal/conventional superconductor point contacts in the presence of magnetic impurity

    NARCIS (Netherlands)

    Yokoyama, T.; Tanaka, Y.; Golubov, Alexandre Avraamovitch; Inoue, J.; Asano, Y.

    2006-01-01

    Charge transport in the diffusive normal metal/insulator/s-wave superconductor junctions is studied in the presence of the magnetic impurity for various situations, where we have used the Usadel equation with Nazarov's generalized boundary condition. It is revealed that the magnetic impurity

  8. Characterization of 10,12-pentacosadiynoic acid Langmuir–Blodgett monolayers and their use in metal–insulator–metal tunnel devices

    Directory of Open Access Journals (Sweden)

    Saumya Sharma

    2014-11-01

    Full Text Available The characterization of Langmuir–Blodgett thin films of 10,12-pentacosadiynoic acid (PDA and their use in metal–insulator–metal (MIM devices were studied. The Langmuir monolayer behavior of the PDA film was studied at the air/water interface using surface tension–area isotherms of polymeric and monomeric PDA. Langmuir–Blodgett (LB, vertical deposition and Langmuir–Schaefer (LS, horizontal deposition techniques were used to deposit the PDA film on various substrates (glass, quartz, silicon, and nickel-coated film on glass. The electrochemical, electrical and optical properties of the LB and LS PDA films were studied using cyclic voltammetry, current–voltage characteristics (I–V, and UV–vis and FTIR spectroscopies. Atomic force microscopy measurements were performed in order to analyze the surface morphology and roughness of the films. A MIM tunnel diode was fabricated using a PDA monolayer assembly as the insulating barrier, which was sandwiched between two nickel layers. The precise control of the thickness of the insulating monolayers proved critical for electron tunneling to take place in the MIM structure. The current–voltage characteristics of the MIM diode revealed tunneling behavior in the fabricated Ni–PDA LB film–Ni structures.

  9. Single Electron Tunneling

    International Nuclear Information System (INIS)

    Ruggiero, Steven T.

    2005-01-01

    Financial support for this project has led to advances in the science of single-electron phenomena. Our group reported the first observation of the so-called ''Coulomb Staircase'', which was produced by tunneling into ultra-small metal particles. This work showed well-defined tunneling voltage steps of width e/C and height e/RC, demonstrating tunneling quantized on the single-electron level. This work was published in a now well-cited Physical Review Letter. Single-electron physics is now a major sub-field of condensed-matter physics, and fundamental work in the area continues to be conducted by tunneling in ultra-small metal particles. In addition, there are now single-electron transistors that add a controlling gate to modulate the charge on ultra-small photolithographically defined capacitive elements. Single-electron transistors are now at the heart of at least one experimental quantum-computer element, and single-electron transistor pumps may soon be used to define fundamental quantities such as the farad (capacitance) and the ampere (current). Novel computer technology based on single-electron quantum dots is also being developed. In related work, our group played the leading role in the explanation of experimental results observed during the initial phases of tunneling experiments with the high-temperature superconductors. When so-called ''multiple-gap'' tunneling was reported, the phenomenon was correctly identified by our group as single-electron tunneling in small grains in the material. The main focus throughout this project has been to explore single electron phenomena both in traditional tunneling formats of the type metal/insulator/particles/insulator/metal and using scanning tunneling microscopy to probe few-particle systems. This has been done under varying conditions of temperature, applied magnetic field, and with different materials systems. These have included metals, semi-metals, and superconductors. Amongst a number of results, we have

  10. Temperature dependence of the magnetic anisotropy of metallic Y-Ba-Cu-O single crystals in the normal phase

    International Nuclear Information System (INIS)

    Miljak, M.; Zlatic, V.; Kos, I.; Aviani, I.; Hamzic, A.; Collin, G.

    1990-01-01

    The magnetic anisotropy measurements of metallic Y-Ba-Cu-O compounds in the normal phase reveal a temperature-dependent diamagnetic component of the susceptibility that increases with decreasing temperature. The temperature variation of the susceptibility anisotropy and its total change do not seem to be much affected by the presence of the superconductivity at some lower temperature and could not be accounted for by superconducting fluctuations. Rather, the data remind one of the behavior of some quasi-two-dimensional metals with anisotropic Fermi surfaces, reflecting the properties of the low-energy excitations in the normal phase. The anisotropy measurements above the bulk superconducting transition temperature T c reveal the nonlinear effects, which are due to the onset of superconductivity in disconnected grains. The existence of a two-step transition, typical for granular superconductors, should be taken into consideration if the normal-phase susceptibility data are compared with the theoretical predictions in the vicinity of T c

  11. Mapping metals in Parkinson's and normal brain using rapid-scanning x-ray fluorescence

    International Nuclear Information System (INIS)

    Popescu, Bogdan F Gh; George, Martin J; McCrea, Richard P E; Devon, Richard M; George, Graham N; Hanson, Akela D; Chapman, L Dean; Nichol, Helen; Bergmann, Uwe; Garachtchenko, Alex V; Luening, Katharina; Kelly, Michael E; Harder, Sheri M; Pickering, Ingrid J

    2009-01-01

    Rapid-scanning x-ray fluorescence (RS-XRF) is a synchrotron technology that maps multiple metals in tissues by employing unique hardware and software to increase scanning speed. RS-XRF was validated by mapping and quantifying iron, zinc and copper in brain slices from Parkinson's disease (PD) and unaffected subjects. Regions and structures in the brain were readily identified by their metal complement and each metal had a unique distribution. Many zinc-rich brain regions were low in iron and vice versa. The location and amount of iron in brain regions known to be affected in PD agreed with analyses using other methods. Sample preparation is simple and standard formalin-fixed autopsy slices are suitable. RS-XRF can simultaneously and non-destructively map and quantify multiple metals and holds great promise to reveal metal pathologies associated with PD and other neurodegenerative diseases as well as diseases of metal metabolism.

  12. What Are Normal Metal Ion Levels After Total Hip Arthroplasty? A Serologic Analysis of Four Bearing Surfaces.

    Science.gov (United States)

    Barlow, Brian T; Ortiz, Philippe A; Boles, John W; Lee, Yuo-Yu; Padgett, Douglas E; Westrich, Geoffrey H

    2017-05-01

    The recent experiences with adverse local tissue reactions have highlighted the need to establish what are normal serum levels of cobalt (Co), chromium (Cr), and titanium (Ti) after hip arthroplasty. Serum Co, Cr, and Ti levels were measured in 80 nonconsecutive patients with well-functioning unilateral total hip arthroplasty and compared among 4 bearing surfaces: ceramic-on-ceramic (CoC); ceramic-on-polyethylene (CoP); metal-on-polyethylene (MoP), and dual mobility (DM). The preoperative and most recent University of California, Los Angeles (UCLA) and Western Ontario and McMaster Universities Arthritis Index (WOMAC) scores were compared among the different bearing surfaces. No significant difference was found among serum Co and Cr levels between the 4 bearing surface groups (P = .0609 and P = .1577). Secondary analysis comparing metal and ceramic femoral heads demonstrated that the metal group (MoP, modular dual mobility (Stryker Orthopedics, Mahwah, NJ) [metal]) had significant higher serum Co levels compared with the ceramic group (CoC, CoP, MDM [ceramic]) (1.05 mg/L ± 1.25 vs 0.59 mg/L ± 0.24; P = .0411). Spearman coefficient identified no correlation between metal ion levels and patient-reported outcome scores. No serum metal ion level differences were found among well-functioning total hip arthroplasty with modern bearing couples. Significantly higher serum Co levels were seen when comparing metal vs ceramic femoral heads in this study and warrants further investigation. Metal ion levels did not correlate with patient-reported outcome measures. Copyright © 2016 Elsevier Inc. All rights reserved.

  13. Modeling all-electrical detection of the inverse Edelstein effect by spin-polarized tunneling in a topological-insulator/ferromagnetic-metal heterostructure

    Science.gov (United States)

    Dey, Rik; Register, Leonard F.; Banerjee, Sanjay K.

    2018-04-01

    The spin-momentum locking of the surface states in a three-dimensional topological insulator (TI) allows a charge current on the surface of the TI induced by an applied spin current onto the surface, which is known as the inverse Edelstein effect (IEE), that could be achieved either by injecting pure spin current by spin-pumping from a ferromagnetic metal (FM) layer or by injecting spin-polarized charge current by direct tunneling of electrons from the FM to the TI. Here, we present a theory of the observed IEE effect in a TI-FM heterostructure for the spin-polarized tunneling experiments. If an electrical current is passed from the FM to the surface of the TI, because of density-of-states polarization of the FM, an effective imbalance of spin-polarized electrons occurs on the surface of the TI. Due to the spin-momentum helical locking of the surface states in the TI, a difference of transverse charge accumulation appears on the TI surface in a direction orthogonal to the direction of the magnetization of the FM, which is measured as a voltage difference. Here, we derive the two-dimensional transport equations of electrons on the surface of a diffusive TI, coupled to a FM, starting from the quantum kinetic equation, and analytically solve the equations for a rectangular geometry to calculate the voltage difference.

  14. Normal spectral emissivity of selected liquid metals and improved thermophysical properties

    International Nuclear Information System (INIS)

    Pottlacher, G.; Seifter, A.

    2001-01-01

    Full Text: Emissivity measurements on several liquid metals up to temperatures of 6000 K have been successfully established by linking a laser polarimetry technique to our well-known method for performing high speed measurements of thermophysical properties on liquid metal samples during microsecond pulse-heating experiments. Thermophysical properties measured with our experimental setup include temperature dependencies of heat capacity, enthalpy, electrical resistivity, density, thermal diffusivity and thermal conductivity up to the end of the stable liquid phase. During grant P12775-PHY additionally to the above listened properties the measurement of the change of the polarization of laser light reflected from the surface during pulse heating was enabled and thus now the temperature dependence of spectral emissivity at 684.5 nm by methods of ellipsometry is derived also. Several liquid metals and alloys have been investigated within this grant and a review of the data obtained will be given here. (author)

  15. Simulation of I-V and C-V curves of metal/GaN/AlGaN/GaN heterostructures with trap-assisted tunnelling

    International Nuclear Information System (INIS)

    Racko, J.; Benko, P.; Grmanova, A.; Harmatha, L.; Breza, J.; Granzner, R.; Schwierz, F.

    2013-01-01

    The described trap-assisted tunnelling (TAT) model of the metal/GaN/Al_xGaN_1_-_x/GaN structure allows analyzing the effect of deep traps upon I-V and C-V characteristics. The negative charge with magnitude proportional to the molar concentration of aluminium gives rise to a barrier at the first heterojunction, which is higher than the Schottky barrier at the metal/GaN interface. On increasing the reverse bias Va the barrier at the first heterojunction is getting lower. The drop of this barrier causes an exponential increase of the reverse current. The current saturates, when the first heterojunction barrier is lower than the Schottky barrier. The effect of TAT can be observed also on varying the parameters of the band of traps. The shape of the simulated C-V curve is affected by changes in the charge on the second heterojunction. In principle it reflects the decrease of electron concentration in the quantum well on increasing the reverse bias V_a. The space charge region becomes wider and the electron concentration at the second heterojunction falls below the concentration of ionized deep trapping centres, which manifests itself as a noticeable drop in the capacitance of the metal/GaN/Al_xGaN_1_-_x/GaN structure. (authors)

  16. Thermovoltage in scanning tunnelling microscopy. Study of heterogeneous metal surfaces on atomic scale; Thermospannung in der Rastertunnelmikroskopie. Untersuchung heterogener Metalloberflaechen auf atomarer Skala

    Energy Technology Data Exchange (ETDEWEB)

    Weyers, B.

    2005-07-01

    In this thesis the thermovoltage has been studied via a tunnel barrier under different aspects. Au(111) has been chosen as substrate. The mean free path of the electrons on the Au(111) surface was determined by a comparison of the standing waves on stage edges with the theoretical prediction. The measurements were performed at different temperatures. Detailed studies were performed on Au(111), Cu(111), and Cu(110) in order to examine the question whether the cause for strong signal on the stage edges lies in the surface state itself or in the band gap. The mani theme of this thesis is the study of a binary metal system, in this case silver on Au(111).

  17. Structure, Mobility, and Composition of Transition Metal Catalyst Surfaces. High-Pressure Scanning Tunneling Microscopy and Ambient-Pressure X-ray Photoelectron Spectroscopy Studies

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Zhongwei [Univ. of California, Berkeley, CA (United States)

    2013-12-06

    Surface structure, mobility, and composition of transition metal catalysts were studied by high-pressure scanning tunneling microscopy (HP-STM) and ambient-pressure X-ray photoelectron spectroscopy (AP-XPS) at high gas pressures. HP-STM makes it possible to determine the atomic or molecular rearrangement at catalyst surfaces, particularly at the low-coordinated active surface sites. AP-XPS monitors changes in elemental composition and chemical states of catalysts in response to variations in gas environments. Stepped Pt and Cu single crystals, the hexagonally reconstructed Pt(100) single crystal, and Pt-based bimetallic nanoparticles with controlled size, shape and composition, were employed as the model catalysts for experiments in this thesis.

  18. Fermi velocity mismatch effects in the tunneling characteristics of high-Tc superconductors

    International Nuclear Information System (INIS)

    Aponte, J.M.; Nunez-Regueiro, J.E.; Bellorin, A.; Octavio, M.

    1994-01-01

    We present a comparative study of the tunneling characteristics of point contacts in which one electrode was a superconducting single crystal of Bi 2 Sr 2 CaCu 2 O x and the other electrode was either a normal metal (N-HTSC point contact), or a non-superconducting rare earth metallic oxide (REMO-HTSC point contact), or another crystal of the same superconductor (HTSC'-HTSC point contact). We show that the mismatch of the Fermi velocities of the electrodes is in part responsible for the irreproducibility of most of the tunneling conductance curves observed in high temperature superconductors. (orig.)

  19. Melt layer erosion of metallic armour targets during off-normal events in tokamaks

    International Nuclear Information System (INIS)

    Bazylev, B.; Wuerz, H.

    2002-01-01

    Melt layer erosion by melt motion is the dominating erosion mechanism for metallic armours under high heat loads. A 1-D fluid dynamics simulation model for calculation of melt motion was developed and validated against experimental results for tungsten from the e-beam facility JEBIS and beryllium from the e-beam facility JUDITH. The driving force in each case is the gradient of the surface tension. Due to the high velocity which develops in the Be melt considerable droplet splashing occurs

  20. Melt layer erosion of metallic armour targets during off-normal events in tokamaks

    Science.gov (United States)

    Bazylev, B.; Wuerz, H.

    2002-12-01

    Melt layer erosion by melt motion is the dominating erosion mechanism for metallic armours under high heat loads. A 1-D fluid dynamics simulation model for calculation of melt motion was developed and validated against experimental results for tungsten from the e-beam facility JEBIS and beryllium from the e-beam facility JUDITH. The driving force in each case is the gradient of the surface tension. Due to the high velocity which develops in the Be melt considerable droplet splashing occurs.

  1. NIS tunnel junction as an x-ray photon sensor

    Science.gov (United States)

    Azgui, Fatma; Mears, Carl A.; Labov, Simon E.; Frank, Matthias A.; Sadoulet, Bernard; Brunet, E.; Hiller, Lawrence J.; Lindeman, Mark A.; Netel, Harrie

    1995-09-01

    This work presents the first results of our development of normal-insulating-superconducting tunnel junctions used as energy dispersive detectors for low energy particles. The device described here is a Ag/Al(subscript 2)O(subscript 3)/Al tunnel junction of area 1.5 multiplied by 10(superscript 4) micrometer squared with thicknesses of 200 nm for the normal Ag strip and 100 nm for the superconducting Al film. Two different high-speed SQUID systems manufactured by quantum magnetics and HYPRES, respectively, were used for the readout of this device. At 80 mK bath temperature we obtained an energy resolution DeltaE(subscript FWHM) equals 250 eV for 5.89 keV x rays absorbed directly in the normal metal. This energy resolution appears to be limited in large part by the observed strong position dependence of the device response.

  2. A new technique for precise measurement of thermal conductivity of metals at normal and high temperatures

    International Nuclear Information System (INIS)

    Binkele, L.

    1990-09-01

    Theoretical and experimental investigations on a new measuring technique are described; a technique similar to the well known Kohlrausch measuring technique, which is characterized by direct electrical sample heating. Subject of the investigations is a cylindrical metallic sample, 5 mm thick and 200 mm in length, which is positioned vertically between water-cooled clamps in a vacuum container. The sample can be heated using two simultaneously operating current sources, a 50 Hz-source for axial flow (main heating) as well as a 200 kHz-induction source for generating eddy currents in two short regions above and below the sample centre (additional heating). By using two heating sources different symmetrical temperature profiles in a central eddy-current-free area of about ± 10mm can be produced for any given central sample temperature. The last chapter contains thermal conductivity and electrical resistivity measuring curves for Pt, W, Fe, Ni, Ag, Al, Mg, Ir, Ru, Re, Ho and Y in the temperature range 273 to 1500 K representative of all the metals and alloys investigated. In cases where comparisons with published precise conductivity data, established by other measuring techniques in restricted temperature ranges, were posible, the new measuring method is greatly supported (in the case of Pt, W, Ni, Ag, Al). For the Metals Ir, Ru, Re, Ho and Y high temperature thermal conductivity data are given for the first time. (orig./MM) [de

  3. Phenomenological theory of the normal and superconductive states of Cu-O and Bi-O metals

    International Nuclear Information System (INIS)

    Varma, C.M.

    1991-01-01

    The universal normal state anomalies in the CuO metals follow from a marginal Fermi liquid hypothesis: there exists a contribution to the polarizability over most of momentum space proportional to omega/T for omega/T much less than 1 and constant thereafter up to a cutoff omega(sub c). Using the same excitation spectrum, the properties of the superconductive state were calculated. The right order of T(sub c) can be obtained, the zero temperature gap, 2 delta (0)/T(sub c) and the nuclear relaxation rate near T(sub c). The possible microscopic physics leading to the marginal Fermi liquid hypothesis is discussed

  4. Proximity effect and hot-electron diffusion in Ag/Al2O3/Al tunnel junctions

    International Nuclear Information System (INIS)

    Netel, H.; Jochum, J.; Labov, S.E.; Mears, C.A.; Frank, M.; Chow, D.; Lindeman, M.A.; Hiller, L.J.

    1997-01-01

    We have fabricated Ag/Al 2 O 3 /Al tunnel junctions on Si substrates using a new process. This process was developed to fabricate superconducting tunnel junctions (STJs) on the surface of a superconductor. These junctions allow us to study the proximity effect of a superconducting Al film on a normal metal trapping layer. In addition, these devices allow us to measure the hot-electron diffusion constant using a single junction. Lastly these devices will help us optimize the design and fabrication of tunnel junctions on the surface of high-Z, ultra-pure superconducting crystals. 5 refs., 8 figs

  5. Scanning tunnelling spectroscopy of low pentacene coverage on the Ag/Si(111)-(√3 x √3) surface

    International Nuclear Information System (INIS)

    Guaino, Ph; Cafolla, A A; McDonald, O; Carty, D; Sheerin, G; Hughes, G

    2003-01-01

    The low coverage S1 phase of pentacene deposited on Ag/Si(111)-(√3 x √3) has been investigated at room temperature by scanning tunnelling microscopy (STM) and scanning tunnelling spectroscopy (STS). Current-voltage data were acquired simultaneously with STM images for this phase. The normalized conductivity reveals two pronounced peaks at -1.10 and +2.25 V relative to the Fermi level. These peaks are attributed to resonant tunnelling through the highest occupied molecular orbital and lowest unoccupied molecular orbital molecular levels of the pentacene layer. The electronic properties of this interface are discussed in relation to results obtained for pentacene adsorbed on other metallic surfaces

  6. Normalizing effect on fatigue crack propagation at the heat-affected zone of AISI 4140 steel shielded metal arc weldings

    Directory of Open Access Journals (Sweden)

    B. Vargas-Arista

    2013-01-01

    Full Text Available The fractography and mechanical behaviour of fatigue crack propagation in the heat-affected zone (HAZ of AISI 4140 steel welded using the shielded metal arc process was analysed. Different austenitic grain size was obtained by normalizing performed at 1200 °C for 5 and 10 hours after welding. Three point bending fatigue tests on pre-cracked specimens along the HAZ revealed that coarse grains promoted an increase in fatigue crack growth rate, hence causing a reduction in both fracture toughness and critical crack length, and a transgranular brittle final fracture with an area fraction of dimple zones connecting cleavage facets. A fractographic analysis proved that as the normalizing time increased the crack length decreased. The increase in the river patterns on the fatigue crack propagation in zone II was also evidenced and final brittle fracture because of transgranular quasicleavage was observed. Larger grains induced a deterioration of the fatigue resistance of the HAZ.

  7. Mercury uptake in vivo by normal and acatalasemic mice exposed to metallic mercury vapor (203Hg degrees) and injected with metallic mercury or mercuric chloride (203HgCl2)

    International Nuclear Information System (INIS)

    Ogata, M.; Kenmotsu, K.; Hirota, N.; Meguro, T.; Aikoh, H.

    1985-01-01

    Levels of mercury in the brain and liver of acatalasemic mice immediately following exposure to metallic mercury vapor or injection of metallic mercury were higher than those found in normal mice. Acatalasemic mice had decreased levels of mercury in the blood and kidneys when the levels were compared with those of normal mice, which indicated that catalase plays a role in oxidizing and taking up mercury. Thus, the brain/blood or liver/blood ratio of mercury concentration in acatalasemic mice was significantly higher than that of normal mice. These results suggest that metallic mercury in the blood easily passed through the blood-brain or blood-liver barrier. The levels of mercury distribution to the kidneys of normal and acatalasemic mice, 1 hr after injection of mercuric chloride solution, were higher than that of normal and acatalasemic mice, respectively, 1 hr after injection of metallic mercury

  8. Scanning-electron-microscope study of normal-impingement erosion of ductile metals

    Science.gov (United States)

    Brainard, W. A.; Salik, J.

    1980-01-01

    Scanning electron microscopy was used to characterize the erosion of annealed copper and aluminum surfaces produced by both single- and multiple-particle impacts. Macroscopic 3.2 mm diameter steel balls and microscopic, brittle erodant particles were projected by a gas gun system so as to impact at normal incidence at speeds up to 140 m/sec. During the impacts by the brittle erodant particles, at lower speeds the erosion behavior was similar to that observed for the larger steel balls. At higher velocities, particle fragmentation and the subsequent cutting by the radial wash of debris created a marked change in the erosion mechanism.

  9. Normal variations in the isotopic composition of metabolically relevant transition metals in human blood

    Science.gov (United States)

    Van Heghe, L.; Cloquet, C.; Vanhaecke, F.

    2012-04-01

    Cu, Fe and Zn are transition metals with great catalytic, structural and regulating importance in the human body. Hence, an aberrant metabolism of these elements can have serious implications on the health of a person. It is assumed that, due to differences in isotope fractionation, the isotopic composition of these elements in whole blood of patients can be different from that in blood of healthy subjects. Therefore, isotopic analysis of the element affected by the disease can be a promising approach for early diagnosis. A method for isotopic analysis of Cu, Fe and Zn in human whole blood was developed. The simultaneous chromatographic isolation of these elements and the conditions for isotope ratio measurement via multi-collector ICP - mass spectrometry (MC-ICP-MS) were optimized. So far, only whole blood of supposedly healthy volunteers (reference population) was analyzed. Results for Fe confirmed the known differences in isotopic composition between male and female blood. It is also shown that other parameters can have influence as well, e.g., the isotopic composition of Zn seems to be governed by the diet.

  10. CsAg{sub 5}Te{sub 3}: a new metal-rich telluride with a unique tunnel structure

    Energy Technology Data Exchange (ETDEWEB)

    Jing, Li [Rutgers Univ., Camden, NJ (United States). Dept. of Chem.; Hongyou, Guo [Rutgers Univ., Camden, NJ (United States). Dept. of Chem.; Xiang, Zhang [Michigan State Univ., East Lansing, MI (United States). Dept. of Chemistry; Kanatzidis, M G [Michigan State Univ., East Lansing, MI (United States). Dept. of Chemistry

    1995-02-15

    The synthesis and structure of a new ternary silver telluride, CsAg{sub 5}Te{sub 3}, is described. The compound was prepared from a Cs{sub 2}Te-CaTe-Te flux but it can also be prepared from a direct combination of Cs{sub 2}Te and Ag{sub 2}Te under vacuum at 600 C. The crystal data for CsAg{sub 5}Te{sub 3} at 20 C (Mo K{alpha} radiation) are as follows: a=14.672(2) A and c=4.601(3) A; V=990.5(8) A{sup 3}; Z=4; D{sub calc}=7.075 g cm{sup -3}; space group, P4{sub 2} /mnm (No. 136); 2{theta}{sub max}=50 ; number of independent data collected, 572; number of data observed with I>3{sigma}(I), 267; number of variables, 32; {mu}=218.51 cm{sup -1}; extinction coefficient, 0.585x10{sup -7}; final R=0.040; R{sub w}=0.046; goodness of fit, 1.42. The compound features a new structure type with Cs{sup +}-filled, relatively large tunnels running through the lattice. The material is a semiconductor with a band gap of about 0.65 eV. ((orig.))

  11. Evaluation of normalized metal artifact reduction (NMAR) in kVCT using MVCT prior images for radiotherapy treatment planning

    International Nuclear Information System (INIS)

    Paudel, M. R.; Mackenzie, M.; Rathee, S.; Fallone, B. G.

    2013-01-01

    Purpose: To evaluate the metal artifacts in kilovoltage computed tomography (kVCT) images that are corrected using a normalized metal artifact reduction (NMAR) method with megavoltage CT (MVCT) prior images.Methods: Tissue characterization phantoms containing bilateral steel inserts are used in all experiments. Two MVCT images, one without any metal artifact corrections and the other corrected using a modified iterative maximum likelihood polychromatic algorithm for CT (IMPACT) are translated to pseudo-kVCT images. These are then used as prior images without tissue classification in an NMAR technique for correcting the experimental kVCT image. The IMPACT method in MVCT included an additional model for the pair/triplet production process and the energy dependent response of the MVCT detectors. An experimental kVCT image, without the metal inserts and reconstructed using the filtered back projection (FBP) method, is artificially patched with the known steel inserts to get a reference image. The regular NMAR image containing the steel inserts that uses tissue classified kVCT prior and the NMAR images reconstructed using MVCT priors are compared with the reference image for metal artifact reduction. The Eclipse treatment planning system is used to calculate radiotherapy dose distributions on the corrected images and on the reference image using the Anisotropic Analytical Algorithm with 6 MV parallel opposed 5 × 10 cm 2 fields passing through the bilateral steel inserts, and the results are compared. Gafchromic film is used to measure the actual dose delivered in a plane perpendicular to the beams at the isocenter.Results: The streaking and shading in the NMAR image using tissue classifications are significantly reduced. However, the structures, including metal, are deformed. Some uniform regions appear to have eroded from one side. There is a large variation of attenuation values inside the metal inserts. Similar results are seen in commercially corrected image. Use

  12. Distribution of water, fat, and metals in normal liver and in liver metastases influencing attenuation on computed tomography

    International Nuclear Information System (INIS)

    Ueda, J.; Kobayashi, Y.; Kenko, Y.; Koike, H.; Kubo, T.; Takano, Y.; Hara, K.; Sumitomo Hospital, Osaka; Osaka National Hospital

    1988-01-01

    The quantity of water, lipid and some metals was measured in autopsy specimens of 8 normal livers, 9 livers with fatty change, and in 12 livers with metastases of various origins. These parameters contribute to the CT number measured in the liver. Water played a major role in demonstration of liver metastases as a low-density area on CT. Other contributory factors include iron, magnesium and zinc. Lipid and calcium had no influence in this respect. Heavy accumulation of calcium in a metastatic lesion gives a high-density area on CT. However, even when a metastatic lesion was perceived on CT as a low-density area, the calcium content of the lesion was not always lower than that of the non-tumour region. (orig.)

  13. Study of molecule-metal interfaces by means of the normal incidence X-ray standing wave technique

    International Nuclear Information System (INIS)

    Mercurio, Giuseppe

    2012-01-01

    Functional surfaces based on monolayers of organic molecules are currently subject of an intense research effort due to their applications in molecular electronics, sensing and catalysis. Because of the strong dependence of organic based devices on the local properties of the molecule-metal interface, a direct investigation of the interface chemistry is of paramount importance. In this context, the bonding distance, measured by means of the normal incidence X-ray standing wave technique (NIXSW), provides a direct access to the molecule-metal interactions. At the same time, NIXSW adsorption heights are used to benchmark different density functional theory (DFT) schemes and determine the ones with predictive power for similar systems. This work investigates the geometric and chemical properties of different molecule/metal interfaces, relevant to molecular electronics and functional surfaces applications, primarily by means of the NIXSW technique. All NIXSW data are analyzed with the newly developed open source program Torricelli, which is thoroughly documented in the thesis. In order to elucidate the role played by the substrate within molecule/metal interfaces, the prototype organic molecule 3,4,9,10-perylene-tetracarboxylic-dianhydride (PTCDA) is explored on the Ag(110) surface. The molecule results more distorted and at smaller bonding distances on the more reactive Ag(110) surface, in comparison with the Ag(100), the Ag(111) and Au(111) substrates. This conclusion follows from the detailed molecular adsorption geometry obtained from the differential analysis of nonequivalent carbon and oxygen species (including a careful error analysis). Subsequently, the chemisorptive PTCDA/Ag(110) interaction is tuned by the co-deposition of an external alkali metal, namely K. As a consequence, the functional groups of PTCDA unbind from the surface, which, in turn, undergoes major reconstruction. In fact, the resulting nanopatterned surface consists of alternated up and down

  14. Steel, hard metal and diamonds. The history of drilling blast holes in mining and tunneling; Stahl, Hartmetall und Diamanten. Zur Geschichte des Sprenglochbohrens im Berg- und Tunnelbau

    Energy Technology Data Exchange (ETDEWEB)

    Feistkorn, E. [Inst. fuer Vortrieb und Gewinnung, DMT-Gesellschaft fuer Forschung und Pruefung mbH, Essen (Germany)

    1997-12-31

    Beginning of the blasting technique in mining and tunneling during the 17th century required drilling holes to take the explosive. Following the use of hammer and wedge, drilling was done over a long period of time by hand with mallet and drillsteel. Continuously, during the 19th century the handwork was replaced by drilling machines. Technically, the evolution of drilling equipment is marked by electrohydraulic control and automatization with the assistance of microelectronics. Regarding the material, the introduction of hard metal and - in addition for rotary drilling - the development of synthetic diamond material are the main features. (orig.) [Deutsch] Mit der Einfuehrung der Sprengtechnik im Bergbau und Tunnelbau im 17. Jahrhundert mussten verfahrensbedingt Bohrloecher zur Aufnahme des Sprengstoffes hergestellt werden. In Anlehnung an die Arbeit mit Schlaegel und Eisen erfolgte dies lange Zeit manuell mit dem Bohrfaeustel und Stahlbohrern. Die Handarbeit wurde waehrend der 2. Haelfte des 19. Jahrhunderts kontinuierlich durch Bohrmaschinen verdraengt. Maschinentechnisch ist die weitere Entwicklung durch elektrohydraulische Steuerungen und die Automatisierung der Bohrgeraete mit Hilfe der Mikroelektronik gekennzeichnet. Materialtechnisch stellen die Einfuehrung des Hartmetalls und beim drehenden Bohren zusaetzlich die Entwicklung synthetischer Diamantwerkstoffe die herausragenden Marksteine dar. (orig.)

  15. Electron and Cooper-pair transport across a single magnetic molecule explored with a scanning tunneling microscope

    Science.gov (United States)

    Brand, J.; Gozdzik, S.; Néel, N.; Lado, J. L.; Fernández-Rossier, J.; Kröger, J.

    2018-05-01

    A scanning tunneling microscope is used to explore the evolution of electron and Cooper-pair transport across single Mn-phthalocyanine molecules adsorbed on Pb(111) from tunneling to contact ranges. Normal-metal as well as superconducting tips give rise to a gradual transition of the Bardeen-Cooper-Schrieffer energy gap in the tunneling range into a zero-energy resonance close to and at contact. Supporting transport calculations show that in the normal-metal-superconductor junctions this resonance reflects the merging of in-gap Yu-Shiba-Rusinov states as well as the onset of Andreev reflection. For the superconductor-superconductor contacts, the zero-energy resonance is rationalized in terms of a finite Josephson current that is carried by phase-dependent Andreev and Yu-Shiba-Rusinov levels.

  16. Superconductor-normal metal-superconductor process development for the fabrication of small Josephson junctions in ramp type configuration

    International Nuclear Information System (INIS)

    Poepel, R.; Hagedorn, D.; Weimann, T.; Buchholz, F.-I.; Niemeyer, J.

    2000-01-01

    At PTB, a fabrication process has been developed in SNS Nb/PdAu/Nb technology for the verification of small Josephson junctions (JJs) in the deep sub-micron range to enable the implementation of JJs as active elements in highly integrated superconducting circuits. Two steps of this technological development are described with regard to appropriately designed circuit layouts of JJ series arrays (JJAs), the first one in a conventional window type junction (WTJ) configuration and the second one in a ramp type junction (RTJ) configuration. Test circuits of JJAs containing up to 10 000 JJs have been fabricated and experimentally tested. In WTJ configuration, the circuits proved to be sensitive to external perturbing effects affecting the stability of circuit operation. In contrast to that, in RTJ configuration, the circuits realized showed correct function and a high grade of reliability of operation. To produce RTJ circuits, the technology parameters have been set to realize JJs with contact areas of A=0.25μmx1.3μm. At a thickness of the PdAu normal metal layer of d = 40 nm, the values achieved for the critical current density and for the product of critical current and normal state resistance are about j c = 200 k Acm -2 and about I c R N = 21 μV. (author)

  17. Study and Optimization on graft polymerization under normal pressure and air atmospheric conditions, and its application to metal adsorbent

    International Nuclear Information System (INIS)

    Ueki, Yuji; Chandra Dafader, Nirmal; Hoshina, Hiroyuki; Seko, Noriaki; Tamada, Masao

    2012-01-01

    Radiation-induced graft polymerization of glycidyl methacrylate (GMA) onto non-woven polyethylene (NWPE) fabric was achieved under normal pressure and air atmospheric conditions, without using unique apparatus such as glass ampoules or vacuum lines. To attain graft polymerization under normal pressure and air atmospheric conditions, the effects of the pre-irradiation dose, pre-irradiation atmosphere, pre-irradiation temperature, de-aeration of GMA-emulsion, grafting atmosphere in a reactor, and dissolved oxygen (DO) concentration in GMA-emulsion on the degree of grafting (Dg) were investigated in detail. It was found that the DO concentration had the strongest influence, the pre-irradiation dose, de-aeration of emulsion and grafting atmosphere had a relatively strong impact, and the pre-irradiation atmosphere and pre-irradiation temperature had the least effect on Dg. The optimum DO concentration before grafting was 2.0 mg/L or less. When a polyethylene bottle was used as a reactor instead of a glass ampoule, graft polymerization under normal pressure and air atmospheric conditions could be achieved under the following conditions; the pre-irradiation dose was more than 50 kGy, the volume ratio of GMA-emulsion to air was 50:1 or less, and the DO concentration in GMA-emulsion during grafting was below 2.0 mg/L. Under these grafting conditions, Dg was controlled within a range of up to 362%. The prepared GMA–grafted NWPE (GMA–g-NWPE) fabric was modified with a phosphoric acid to obtain an adsorbent for heavy metal ions. In the column-mode adsorption tests of Pb(II), the adsorption performance of the produced phosphorylated GMA–g-NWPE fabric (fibrous metal adsorbent) was not essentially dependent on the flow rate of the feed. The breakthrough points of 200, 500, and 1000 h −1 in space velocity were 483, 477 and 462 bed volumes, and the breakthrough capacities of the three flow rates were 1.16, 1.15 and 1.16 mmol-Pb(II)/g-adsorbent.

  18. Study and Optimization on graft polymerization under normal pressure and air atmospheric conditions, and its application to metal adsorbent

    Science.gov (United States)

    Ueki, Yuji; Chandra Dafader, Nirmal; Hoshina, Hiroyuki; Seko, Noriaki; Tamada, Masao

    2012-07-01

    Radiation-induced graft polymerization of glycidyl methacrylate (GMA) onto non-woven polyethylene (NWPE) fabric was achieved under normal pressure and air atmospheric conditions, without using unique apparatus such as glass ampoules or vacuum lines. To attain graft polymerization under normal pressure and air atmospheric conditions, the effects of the pre-irradiation dose, pre-irradiation atmosphere, pre-irradiation temperature, de-aeration of GMA-emulsion, grafting atmosphere in a reactor, and dissolved oxygen (DO) concentration in GMA-emulsion on the degree of grafting (Dg) were investigated in detail. It was found that the DO concentration had the strongest influence, the pre-irradiation dose, de-aeration of emulsion and grafting atmosphere had a relatively strong impact, and the pre-irradiation atmosphere and pre-irradiation temperature had the least effect on Dg. The optimum DO concentration before grafting was 2.0 mg/L or less. When a polyethylene bottle was used as a reactor instead of a glass ampoule, graft polymerization under normal pressure and air atmospheric conditions could be achieved under the following conditions; the pre-irradiation dose was more than 50 kGy, the volume ratio of GMA-emulsion to air was 50:1 or less, and the DO concentration in GMA-emulsion during grafting was below 2.0 mg/L. Under these grafting conditions, Dg was controlled within a range of up to 362%. The prepared GMA-grafted NWPE (GMA-g-NWPE) fabric was modified with a phosphoric acid to obtain an adsorbent for heavy metal ions. In the column-mode adsorption tests of Pb(II), the adsorption performance of the produced phosphorylated GMA-g-NWPE fabric (fibrous metal adsorbent) was not essentially dependent on the flow rate of the feed. The breakthrough points of 200, 500, and 1000 h-1 in space velocity were 483, 477 and 462 bed volumes, and the breakthrough capacities of the three flow rates were 1.16, 1.15 and 1.16 mmol-Pb(II)/g-adsorbent.

  19. Observation of spin-selective tunneling in SiGe nanocrystals.

    Science.gov (United States)

    Katsaros, G; Golovach, V N; Spathis, P; Ares, N; Stoffel, M; Fournel, F; Schmidt, O G; Glazman, L I; De Franceschi, S

    2011-12-09

    Spin-selective tunneling of holes in SiGe nanocrystals contacted by normal-metal leads is reported. The spin selectivity arises from an interplay of the orbital effect of the magnetic field with the strong spin-orbit interaction present in the valence band of the semiconductor. We demonstrate both experimentally and theoretically that spin-selective tunneling in semiconductor nanostructures can be achieved without the use of ferromagnetic contacts. The reported effect, which relies on mixing the light and heavy holes, should be observable in a broad class of quantum-dot systems formed in semiconductors with a degenerate valence band.

  20. Empirical analyses on the development trend of non-ferrous metal industry under China’s new normal

    Science.gov (United States)

    Li, C. X.; Liu, C. X.; Zhang, Q. L.

    2017-08-01

    The CGE model of Yunnan’s macro economy was constructed based on the input-output data of Yunnan in 2012, and the development trend of the non-ferrous metals industry (NMI) under the China’s new normal was simulated. In view of this, according to different expected economic growth, and optimized economic structure, the impact on development of Yunnan NMI was simulated. The results show that the NMI growth rate is expected to decline when the economic growth show a downward trend, but the change of the proportion is relatively small. Moreover, the structure in proportion was adjusted to realize the economic structure optimization, while the proportion of NMI in GDP will decline. In contrast, the biggest influence on the NMI is the change of economic structure. From the statistics of last two years, we can see that NMI is growing, and at the same time, its proportion is declining, which is consistent with the results of simulation. But the adjustment of economic structure will take a long time. It is need to improve the proportion of deep-processing industry, extend the industrial chain, enhance the value chain, so as to be made good use of resource advantage.

  1. Quasiclassical Theory of Spin Imbalance in a Normal Metal-Superconductor Heterostructure with a Spin-Active Interface

    International Nuclear Information System (INIS)

    Shevtsov, O; Löfwander, T

    2014-01-01

    Non-equilibrium phenomena in superconductors have attracted much attention since the first experiments on charge imbalance in the early 1970's. Nowadays a new promising line of research lies at an intersection between superconductivity and spintronics. Here we develop a quasiclassical theory of a single junction between a normal metal and a superconductor with a spin-active interface at finite bias voltages. Due to spin-mixing and spin-filtering effects of the interface a non-equilibrium magnetization (or spin imbalance) is induced at the superconducting side of the junction, which relaxes to zero in the bulk. A peculiar feature of the system is the presence of interface-induced Andreev bound states, which influence the magnitude and the decay length of spin imbalance. Recent experiments on spin and charge density separation in superconducting wires required external magnetic field for observing a spin signal via non-local measurements. Here, we propose an alternative way to observe spin imbalance without applying magnetic field

  2. Radio metal (169Yb) uptake in normal and tumour cells in vitro. Influence of metabolic cell activity and complex structure

    International Nuclear Information System (INIS)

    Franke, W.G.; Kampf, G.

    1996-01-01

    Trivalent radio metal tracers have been used for tumour imaging and metastatic pain palliation. For better understanding their tumour accumulation, basic model studies of uptake of different 169 Yb complexes into cultured normal and tumour cells were performed. Whereas the uptake of 169 Yb citrate is strongly dependent on the metabolic activity and is not tumour-cell pacific, the uptake of 169 Yb complexed with amino carbonic acid (NTA, EDTA, DTPA) does not correlate to the metabolic activities. These complexes are taken up to a greater amount by the tumour cells (by a factor of about 2). Uptake of both complex types leads to a stable association to cellular compounds, 169 Yb is not releasable by the strong complexing agent DTPA. Protein binding of the 169 Yb complexes shows great influence on their cellular uptake. The bound proportion is no more available,for cellular uptake. The results indicate that i 0 uptake of 169 Yb citrate is an active cellular transport process which i not tumor-specific, ii) the 169 Yb amino carbonic acid complexes show a weak favouring by the tumour cells, iii) different from earlier acceptions the Yb complexes studied are not taken up by the cells in protein-bound form. The structure of the Yb complex is decisive for its protein binding and cellular uptake. (author). 13 refs., 6 figs

  3. Recognition tunneling

    Czech Academy of Sciences Publication Activity Database

    Lindsay, S.; He, J.; Sankey, O.; Hapala, Prokop; Jelínek, Pavel; Zhang, P.; Chang, S.; Huang, S.

    2010-01-01

    Roč. 21, č. 26 (2010), 262001/1-262001/12 ISSN 0957-4484 R&D Projects: GA ČR GA202/09/0545 Institutional research plan: CEZ:AV0Z10100521 Keywords : STM * tunneling current * molecular electronics * DFT calculations Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.644, year: 2010

  4. Quasiparticle Green's function theory of the Josephson effect in chiral p-wave superconductor/diffusive normal metal/chiral p-wave superconductor junctions

    NARCIS (Netherlands)

    Sawa, Y.; Yokoyama, T.; Tanaka, Y.; Golubov, Alexandre Avraamovitch

    2007-01-01

    We study the Josephson effect in chiral p-wave superconductor/diffusive normal metal (DN)/chiral p-wave superconductor (CP/DN/CP) junctions using quasiclassical Green's function formalism with proper boundary conditions. The px+ipy-wave symmetry of superconducting order parameter is chosen which is

  5. Theory of Josephson effect in Sr2RuO4/diffusive normal metal/Sr2RuO4 junctions

    NARCIS (Netherlands)

    Sawa, Y.; Yokoyama, T.; Tanaka, Y.; Golubov, Alexandre Avraamovitch

    2007-01-01

    We derive a generalized Nazarov’s boundary condition for diffusive normal metal (DN)/chiral p-wave superconductor (CP) interface including the macroscopic phase of the superconductor. The Josephson effect is studied in CP/DN/CP junctions solving the Usadel equations under the above boundary

  6. A retrospective review of bone tunnel enlargement after anterior cruciate ligament reconstruction with hamstring tendons fixed with a metal round cannulated interference screw in the femur.

    Science.gov (United States)

    Kobayashi, Masahiko; Nakagawa, Yasuaki; Suzuki, Takashi; Okudaira, Shuzo; Nakamura, Takashi

    2006-10-01

    To assess bone tunnel enlargement after anterior cruciate ligament (ACL) reconstruction with the use of hamstring tendons fixed with a round cannulated interference (RCI) screw in the femur. A consecutive series of 30 ACL reconstructions performed with hamstring tendons fixed with an RCI screw in the femur and with staples via Leeds-Keio ligament in the tibia was retrospectively reviewed. The clinical outcome was evaluated through the Lysholm score. Anterior instability was tested by Telos-SE (Telos Japan, Tokyo, Japan) measurement. The location and angle of each femoral and tibial tunnel were measured with the use of plain radiographs, and bone tunnel enlargement greater than 2 mm detected any time 3, 6, 12, and 24 months postoperatively was defined as positive. Each factor (location and angle of the tunnels, sex, affected side, age, Lysholm score, and Telos-SE measurement) was compared between enlarged and nonenlarged groups. Positive enlargement of the bone tunnel (>2.0 mm) was observed in 36.7% (11 of 30) on the femoral side and 33.3% (10 of 30) on the tibial side, and in 6 knees of both sides. Half of patients (15 of 30) had an enlarged tunnel on the femoral or the tibial side until 1 year postoperatively. In most cases, enlargement reached maximum at 6 months postoperatively. Female patients tended to have an enlarged tunnel, especially on the femoral side (P < .05). Tunnel enlargement was not correlated with location and angle of the tunnels. Moreover, no difference was found in Lysholm score and Telos-SE measurement between enlarged and nonenlarged groups, although the nonenlarged group tended to exhibit higher Lysholm score and lesser instability. Bone tunnel enlargement of the femoral or tibial side was observed in half of patients (6 in both sides, 5 only in the femur, and 4 only in the tibia) after ACL reconstruction was performed with a hamstring tendon fixed with an RCI screw. Female patients had a greater chance for enlargement of the femoral tunnel

  7. Adaptation of the model of tunneling in a metal/CaF{sub 2}/Si(111) system for use in industrial simulators of MIS devices

    Energy Technology Data Exchange (ETDEWEB)

    Vexler, M. I., E-mail: shulekin@mail.ioffe.ru; Illarionov, Yu. Yu.; Tyaginov, S. E. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Grasser, T. [Institute for Microelectronics, TU Vienna (Austria)

    2015-02-15

    An approach toward simplification of the model of the tunneling transport of electrons through a thin layer of crystalline calcium fluoride into a silicon (111) substrate with subsequent implementation in simulators of semiconductor devices is suggested. The validity of the approach is proven by comparing the results of modeling using simplified formulas with the results of precise calculations and experimental data. The approach can be applied to calculations of tunneling currents in structures with any crystalline insulators on Si (111)

  8. Altered ion transport in normal human bronchial epithelial cells following exposure to chemically distinct metal welding fume particles.

    Science.gov (United States)

    Fedan, Jeffrey S; Thompson, Janet A; Meighan, Terence G; Zeidler-Erdely, Patti C; Antonini, James M

    2017-07-01

    Welding fume inhalation causes pulmonary toxicity, including susceptibility to infection. We hypothesized that airway epithelial ion transport is a target of fume toxicity, and investigated the effects of fume particulates from manual metal arc-stainless steel (MMA-SS) and gas metal arc-mild steel (GMA-MS) on ion transport in normal human bronchial epithelium (NHBE) cultured in air-interface. MMA-SS particles, more soluble than GMA-MS particles, contain Cr, Ni, Fe and Mn; GMA-MS particles contain Fe and Mn. MMA-SS or GMA-MS particles (0.0167-166.7μg/cm 2 ) were applied apically to NHBEs. After 18h transepithelial potential difference (V t ), resistance (R t ), and short circuit current (I sc ) were measured. Particle effects on Na + and Cl¯ channels and the Na + ,K + ,2Cl¯-cotransporter were evaluated using amiloride (apical), 5-nitro-2-[(3-phenylpropyl)amino]benzoic acid (NPPB, apical), and bumetanide (basolateral), respectively. MMA-SS (0.0167-16.7μg/cm 2 ) increased basal V t . Only 16.7μg/cm 2 GMA-MS increased basal V t significantly. MMA-SS or GMA-MS exposure potentiated I sc responses (decreases) to amiloride and bumetanide, while not affecting those to NPPB, GMA-MS to a lesser degree than MMA-SS. Variable effects on R t were observed in response to amiloride, and bumetanide. Generally, MMA-SS was more potent in altering responses to amiloride and bumetanide than GMA-MS. Hyperpolarization occurred in the absence of LDH release, but decreases in V t , R t , and I sc at higher fume particulate doses accompanied LDH release, to a greater extent for MMA-SS. Thus, Na + transport and Na + ,K + ,2Cl¯-cotransport are affected by fume exposure; MMA-MS is more potent than GMA-MS. Enhanced Na + absorption and decreased airway surface liquid could compromise defenses against infection. Published by Elsevier Inc.

  9. Altered ion transport in normal human bronchial epithelial cells following exposure to chemically distinct metal welding fume particles

    Energy Technology Data Exchange (ETDEWEB)

    Fedan, Jeffrey S., E-mail: jsf2@cdc.gov; Thompson, Janet A.; Meighan, Terence G.; Zeidler-Erdely, Patti C.; Antonini, James M.

    2017-07-01

    Welding fume inhalation causes pulmonary toxicity, including susceptibility to infection. We hypothesized that airway epithelial ion transport is a target of fume toxicity, and investigated the effects of fume particulates from manual metal arc-stainless steel (MMA-SS) and gas metal arc-mild steel (GMA-MS) on ion transport in normal human bronchial epithelium (NHBE) cultured in air-interface. MMA-SS particles, more soluble than GMA-MS particles, contain Cr, Ni, Fe and Mn; GMA-MS particles contain Fe and Mn. MMA-SS or GMA-MS particles (0.0167–166.7 μg/cm{sup 2}) were applied apically to NHBEs. After 18 h transepithelial potential difference (V{sub t}), resistance (R{sub t}), and short circuit current (I{sub sc}) were measured. Particle effects on Na{sup +} and Cl¯ channels and the Na{sup +},K{sup +},2Cl¯-cotransporter were evaluated using amiloride (apical), 5-nitro-2-[(3-phenylpropyl)amino]benzoic acid (NPPB, apical), and bumetanide (basolateral), respectively. MMA-SS (0.0167–16.7 μg/cm{sup 2}) increased basal V{sub t}. Only 16.7 μg/cm{sup 2} GMA-MS increased basal V{sub t} significantly. MMA-SS or GMA-MS exposure potentiated I{sub sc} responses (decreases) to amiloride and bumetanide, while not affecting those to NPPB, GMA-MS to a lesser degree than MMA-SS. Variable effects on R{sub t} were observed in response to amiloride, and bumetanide. Generally, MMA-SS was more potent in altering responses to amiloride and bumetanide than GMA-MS. Hyperpolarization occurred in the absence of LDH release, but decreases in V{sub t}, R{sub t}, and I{sub sc} at higher fume particulate doses accompanied LDH release, to a greater extent for MMA-SS. Thus, Na{sup +} transport and Na{sup +},K{sup +},2Cl¯-cotransport are affected by fume exposure; MMA-MS is more potent than GMA-MS. Enhanced Na{sup +} absorption and decreased airway surface liquid could compromise defenses against infection. - Highlights: • Welding fume particle toxicity was investigated in human bronchial

  10. Thermoelectric-induced spin currents in single-molecule magnet tunnel junctions

    Science.gov (United States)

    Zhang, Zhengzhong; Jiang, Liang; Wang, Ruiqiang; Wang, Baigeng; Xing, D. Y.

    2010-12-01

    A molecular spin-current generator is proposed, which consists of a single-molecule magnet (SMM) coupled to two normal metal electrodes with temperature gradient. It is shown that this tunneling junction can generate a highly spin-polarized current by thermoelectric effects, whose flowing direction and spin polarization can be changed by adjusting the gate voltage applied to the SMM. This device can be realized with current technologies and may have practical use in spintronics and quantum information.

  11. MR imaging of the carpal tunnel syndrome

    International Nuclear Information System (INIS)

    Elias, D.; Lind, J.; Blair, S.; Light, T.; Wisniewski, R.; Moncado, R.

    1987-01-01

    MR is an ideal noninvasive means to image the structures forming the carpal tunnel in both normal and pathologic conditions. The carpal tunnel syndrome is a frequently encountered entity caused by compression of the median nerve as it passes through the carpal tunnel. This may result from a variety of conditions including edema from acute chronic trauma, rheumatoid tenosynovitis, degenerative joint disease or soft-tissue masses. This exhibit demonstrates the optimal MR imaging techniques to display the structures of the carpal tunnel. The normal anatomy is reviewed and variations in normal anatomy that may predispose to disease are included. Examples of the morphologic changes demonstrated in 20 patients diagnosed with carpal tunnel syndrome are displayed. The exhibit also reviews the findings in 20 postoperative cases

  12. Tunnel magnetoresistance in asymmetric double-barrier magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Useinov, N.Kh.; Petukhov, D.A.; Tagirov, L.R.

    2015-01-01

    The spin-polarized tunnel conductance and tunnel magnetoresistance (TMR) through a planar asymmetric double-barrier magnetic tunnel junction (DBMTJ) have been calculated using quasi-classical model. In DBMTJ nanostructure the magnetization of middle ferromagnetic metal layer can be aligned parallel or antiparallel with respect to the fixed magnetizations of the top and bottom ferromagnetic electrodes. The transmission coefficients of an electron to pass through the barriers have been calculated in terms of quantum mechanics. The dependencies of tunnel conductance and TMR on the applied voltage have been calculated in case of non-resonant transmission. Estimated in the framework of our model, the difference between the spin-channels conductances at low voltages was found relatively large. This gives rise to very high magnitude of TMR. - Highlights: • The spin-polarized conductance through the junction is calculated. • Dependencies of the tunnel conductance vs applied bias are shown. • Bias voltage dependence of tunnel magnetoresistance for the structure is shown

  13. Tunneling Anomalous and Spin Hall Effects.

    Science.gov (United States)

    Matos-Abiague, A; Fabian, J

    2015-07-31

    We predict, theoretically, the existence of the anomalous Hall effect when a tunneling current flows through a tunnel junction in which only one of the electrodes is magnetic. The interfacial spin-orbit coupling present in the barrier region induces a spin-dependent momentum filtering in the directions perpendicular to the tunneling current, resulting in a skew tunneling even in the absence of impurities. This produces an anomalous Hall conductance and spin Hall currents in the nonmagnetic electrode when a bias voltage is applied across the tunneling heterojunction. If the barrier is composed of a noncentrosymmetric material, the anomalous Hall conductance and spin Hall currents become anisotropic with respect to both the magnetization and crystallographic directions, allowing us to separate this interfacial phenomenon from the bulk anomalous and spin Hall contributions. The proposed effect should be useful for proving and quantifying the interfacial spin-orbit fields in metallic and metal-semiconductor systems.

  14. Tunnel - history of

    International Nuclear Information System (INIS)

    1998-11-01

    This book introduces history of tunnel in ancient times, the middle ages and modern times, survey of tunnel and classification of bedrock like environment survey of position, survey of the ground, design of tunnel on basic thing of the design, and design of tunnel of bedrock, analysis of stability of tunnel and application of the data, construction of tunnel like lattice girder and steel fiber reinforced shot crete, and maintenance control and repair of tunnel.

  15. Tunneling anisotropic magnetoresistance in single-molecule magnet junctions

    Science.gov (United States)

    Xie, Haiqing; Wang, Qiang; Jiao, Hujun; Liang, J.-Q.

    2012-08-01

    We theoretically investigate quantum transport through single-molecule magnet (SMM) junctions with ferromagnetic and normal-metal leads in the sequential regime. The current obtained by means of the rate-equation gives rise to the tunneling anisotropic magnetoresistance (TAMR), which varies with the angle between the magnetization direction of ferromagnetic lead and the easy axis of SMM. The angular dependence of TAMR can serve as a probe to determine experimentally the easy axis of SMM. Moreover, it is demonstrated that both the magnitude and the sign of TAMR are tunable by the bias voltage, suggesting a new spin-valve device with only one magnetic electrode in molecular spintronics.

  16. Thermally processed titanium oxides film on Si(0 0 1) surface studied with scanning tunneling microscopy/spectroscopy

    International Nuclear Information System (INIS)

    Aoki, T.; Shudo, K.; Sato, K.; Ohno, S.; Tanaka, M.

    2010-01-01

    Thermal structural changes of TiO x films built on a Si(0 0 1) surface were investigated at the nanometer scale with scanning tunneling microscopy. Electronic properties of individual clusters were classified by means of scanning tunneling spectroscopy. The differential conductance (dI/dV) near the Fermi energy showed that nano-clusters were transformed from semiconducting Ti-silicates into metallic Ti-silicides after heating to 970 K. Peaks of normalized differential conductance (dI/dV/(I/V)) of the clusters shifted after heating to about 1070 K, indicating exclusion of oxygen from the clusters.

  17. Multi-elemental characterization of tunnel and road dusts in Houston, Texas using dynamic reaction cell-quadrupole-inductively coupled plasma–mass spectrometry: Evidence for the release of platinum group and anthropogenic metals from motor vehicles

    International Nuclear Information System (INIS)

    Spada, Nicholas; Bozlaker, Ayse; Chellam, Shankararaman

    2012-01-01

    Highlights: ► Analytical method for PGEs, main group, transition and rare earth metals developed. ► Comprehensive characterization of road and tunnel dust samples was accomplished. ► PGEs in dusts arise from autocatalyst attrition. ► Mobile sources also contributed to Cu, Zn, Ga, As, Mo, Cd, Sn, Sb, Ba, W and Pb. ► All other elements, including rare earths arose from crustal sources. - Abstract: Platinum group elements (PGEs) including Rh, Pd, and Pt are important tracers for vehicular emissions, though their measurement is often challenging and difficult to replicate in environmental campaigns. These challenges arise from sample preparation steps required for PGE quantitation, which often cause severe isobaric interferences and spectral overlaps from polyatomic species of other anthropogenically emitted metals. Consequently, most previous road dust studies have either only quantified PGEs or included a small number of anthropogenic elements. Therefore a novel analytical method was developed to simultaneously measure PGEs, lanthanoids, transition and main group elements to comprehensively characterize the elemental composition of urban road and tunnel dusts. Dust samples collected from the vicinity of high-traffic roadways and a busy underwater tunnel restricted to single-axle (predominantly gasoline-driven) vehicles in Houston, TX were analyzed for 45 metals with the newly developed method using dynamic reaction cell-quadrupole-inductively coupled plasma–mass spectrometry (DRC-q-ICP–MS). Average Rh, Pd and Pt concentrations were 152 ± 52, 770 ± 208 and 529 ± 130 ng g −1 respectively in tunnel dusts while they varied between 6 and 8 ng g −1 , 10 and 88 ng g −1 and 35 and 131 ng g −1 in surface road dusts. Elemental ratios and enrichment factors demonstrated that PGEs in dusts originated from autocatalyst attrition/abrasion. Strong evidence is also presented for mobile source emissions of Cu, Zn, Ga, As, Mo, Cd, Sn, Sb, Ba, W and Pb. However

  18. Quantum tunneling in the adiabatic Dicke model

    International Nuclear Information System (INIS)

    Chen Gang; Chen Zidong; Liang Jiuqing

    2007-01-01

    The Dicke model describes N two-level atoms interacting with a single-mode bosonic field and exhibits a second-order phase transition from the normal to the superradiant phase. The energy levels are not degenerate in the normal phase but have degeneracy in the superradiant phase, where quantum tunneling occurs. By means of the Born-Oppenheimer approximation and the instanton method in quantum field theory, the tunneling splitting, inversely proportional to the tunneling rate for the adiabatic Dicke model, in the superradiant phase can be evaluated explicitly. It is shown that the tunneling splitting vanishes as exp(-N) for large N, whereas for small N it disappears as √(N)/exp(N). The dependence of the tunneling splitting on the relevant parameters, especially on the atom-field coupling strength, is also discussed

  19. Carpal Tunnel Syndrome

    Science.gov (United States)

    ... a passing cramp? It could be carpal tunnel syndrome. The carpal tunnel is a narrow passageway of ... three times more likely to have carpal tunnel syndrome than men. Early diagnosis and treatment are important ...

  20. Scanning tunneling spectroscopy on superconducting proximity nanostructures

    International Nuclear Information System (INIS)

    Chapelier, C; Vinet, M; Lefloch, F

    2001-01-01

    We investigated the local density of states (LDOS) of a normal metal (N) in good electrical contact with a superconductor (S) as a function of the distance x to the NS interface. The sample consists of a pattern of alternate L = 1 mm wide strips of Au and Nb made by UV lithography. We used a low temperature scanning tunneling microscope and a lock-in detection technique to record simultaneously dI/dV(V,x) curves and the topographic profile z(x) at 1.5 K. We scanned along lines perpendicular to the strips. All the spectra show a dip near the Fermi energy, which spectral extension decreases from the superconducting gap Δ at the NS interface to zero at distances x >> ξ N where ξ N ≅ √hD N /2Δ ≅ 53nm is the coherence length in the normal metal. Our measurements are correctly described in the framework of the quasi-classical Green's function formalism. We numerically solved the 1D Usadel equation and extracted a decoherence time in gold of 4 ps. We also investigated the LDOS of small ridges of Au deposited on the top of the Nb lines. In this case, L ≤ ξ N and the spatial variations of the spectra depend on the exact shape of the Au ridge. However, our results are consistent with a predicted minigap related to the Thouless energy. (4. mesoscopic superconductivity)

  1. Metal-organic chemical vapor deposition of high quality, high indium composition N-polar InGaN layers for tunnel devices

    Science.gov (United States)

    Lund, Cory; Romanczyk, Brian; Catalano, Massimo; Wang, Qingxiao; Li, Wenjun; DiGiovanni, Domenic; Kim, Moon J.; Fay, Patrick; Nakamura, Shuji; DenBaars, Steven P.; Mishra, Umesh K.; Keller, Stacia

    2017-05-01

    In this study, the growth of high quality N-polar InGaN films by metalorganic chemical vapor deposition is presented with a focus on growth process optimization for high indium compositions and the structural and tunneling properties of such films. Uniform InGaN/GaN multiple quantum well stacks with indium compositions up to 0.46 were grown with local compositional analysis performed by energy-dispersive X-ray spectroscopy within a scanning transmission electron microscope. Bright room-temperature photoluminescence up to 600 nm was observed for films with indium compositions up to 0.35. To study the tunneling behavior of the InGaN layers, N-polar GaN/In0.35Ga0.65N/GaN tunnel diodes were fabricated which reached a maximum current density of 1.7 kA/cm2 at 5 V reverse bias. Temperature-dependent measurements are presented and confirm tunneling behavior under reverse bias.

  2. Tunneling technologies for the collider ring tunnels

    International Nuclear Information System (INIS)

    Frobenius, P.

    1989-01-01

    The Texas site chosen for the Superconducting Super Collider has been studied, and it has been determined that proven, conventional technology and accepted engineering practice are suitable for constructing the collider tunnels. The Texas National Research Laboratory Commission report recommended that two types of tunneling machines be used for construction of the tunnels: a conventional hard rock tunnel boring machine (TBM) for the Austin chalk and a double shielded, rotary TBM for the Taylor marl. Since the tunneling machines usually set the pace for the project, efficient planning, operation, and coordination of the tunneling system components will be critical to the schedule and cost of the project. During design, tunneling rate prediction should be refined by focusing on the development of an effective tunneling system and evaluating its capacity to meet or exceed the required schedules. 8 refs., 13 figs

  3. Background levels of heavy metals in surficial sediments of the Gulf of Lions (NW Mediterranean): An approach based on 133Cs normalization and lead isotope measurements

    International Nuclear Information System (INIS)

    Roussiez, Vincent; Ludwig, Wolfgang; Probst, Jean-Luc; Monaco, Andre

    2005-01-01

    This paper presents an attempt to reach natural background levels of heavy metals in surficial sediments of the Gulf of Lions (NW Mediterranean). To correct for the grain-size effect, normalization procedures based on a clay mineral indicator element are commonly used, after a first grain size separation by sieving. In our study, we tested the applicability of this method with respect to commonly used normalizer elements, and found that stable Cs shows the best ability to reflect the fine sediment fraction. Background levels were successfully reached for Co, Cr, Cu, Ni and Pb, compared to various literature references. Nevertheless, in the case of lead, the normalized data depicted a general enrichment in all samples, and the natural levels could only be reached when concentrations were corrected for the atmospheric contribution by analysing lead isotope ratios. Also for Zn, a general enrichment was found in our samples, although less important. - Among several potential normalizers, stable Cs ( 133 Cs) depicted the best ability to correct for the grain-size effect of shelf sediments and was used to estimate regional background levels of heavy metals

  4. Comparison of electron transmittances and tunneling currents in an anisotropic TiNx/HfO2/SiO2/p-Si(100) metal-oxide-semiconductor (MOS) capacitor calculated using exponential- and Airy-wavefunction approaches and a transfer matrix method

    International Nuclear Information System (INIS)

    Noor, Fatimah A.; Abdullah, Mikrajuddin; Sukirno; Khairurrijal

    2010-01-01

    Analytical expressions of electron transmittance and tunneling current in an anisotropic TiN x /HfO 2 /SiO 2 /p-Si(100) metal-oxide-semiconductor (MOS) capacitor were derived by considering the coupling of transverse and longitudinal energies of an electron. Exponential and Airy wavefunctions were utilized to obtain the electron transmittance and the electron tunneling current. A transfer matrix method, as a numerical approach, was used as a benchmark to assess the analytical approaches. It was found that there is a similarity in the transmittances calculated among exponential- and Airy-wavefunction approaches and the TMM at low electron energies. However, for high energies, only the transmittance calculated by using the Airy-wavefunction approach is the same as that evaluated by the TMM. It was also found that only the tunneling currents calculated by using the Airy-wavefunction approach are the same as those obtained under the TMM for all range of oxide voltages. Therefore, a better analytical description for the tunneling phenomenon in the MOS capacitor is given by the Airy-wavefunction approach. Moreover, the tunneling current density decreases as the titanium concentration of the TiN x metal gate increases because the electron effective mass of TiN x decreases with increasing nitrogen concentration. In addition, the mass anisotropy cannot be neglected because the tunneling currents obtained under the isotropic and anisotropic masses are very different. (semiconductor devices)

  5. Non normal and non quadratic anisotropic plasticity coupled with ductile damage in sheet metal forming: Application to the hydro bulging test

    International Nuclear Information System (INIS)

    Badreddine, Houssem; Saanouni, Khemaies; Dogui, Abdelwaheb

    2007-01-01

    In this work an improved material model is proposed that shows good agreement with experimental data for both hardening curves and plastic strain ratios in uniaxial and equibiaxial proportional loading paths for steel metal until the final fracture. This model is based on non associative and non normal flow rule using two different orthotropic equivalent stresses in both yield criterion and plastic potential functions. For the plastic potential the classical Hill 1948 quadratic equivalent stress is considered while for the yield criterion the Karafillis and Boyce 1993 non quadratic equivalent stress is used taking into account the non linear mixed (kinematic and isotropic) hardening. Applications are made to hydro bulging tests using both circular and elliptical dies. The results obtained with different particular cases of the model such as the normal quadratic and the non normal non quadratic cases are compared and discussed with respect to the experimental results

  6. Enhanced MRI in carpal tunnel syndrome

    International Nuclear Information System (INIS)

    Hayakawa, Katsuhiko; Nakane, Takashi; Kobayashi, Shigeru; Asai, Takahiro; Wada, Kunio; Yoshizawa, Hidezo

    1998-01-01

    In this study, we performed contrast-enhanced MRI in patients with idiopathic carpal tunnel syndrome and examined the morphologic change in the carpal tunnel. In the transverse section of the opening of carpal tunnel where scaphoid and pisiform bones are figured out, we measured and examined 4 items, viz. the soft carpal tunnel volume, flat rate of median nerve, position of median nerve and thickness of palmer ligaments composing the base of carpal tunnel, with an image analyzer attached to the MRI apparatus. Whereas the average carpal tunnel volume in 12 hands of normal controls was 166.8 mm 2 , that in 74 hands of carpal tunnel syndrome was 207.2 mm 2 , a significant increase compared with the normal controls. The flat rate of median nerve was 46% in the controls, but that was 37.5% in the carpal tunnel syndrome, a significant flattening was noted. We connected the peaks of the scaphoid node and pisiform bone with a line and named it standard line. When we observed the position of median nerve in the carpal tunnel, the nerve in 9 of 12 hands, 75%, lay below the standard line in the controls, but the nerve in 65 of 74 hands, 87.8%, lay above the standard line in the carpal tunnel syndrome, clearly showing that the median nerve had shifted to the palmar side. Regarding these morphologic changes of the carpal tunnel, the internal pressure of the carpal tunnel is considered to be raised with swelling of the soft tissues mainly composing the inside of carpal tunnel, thus the area of cross section of carpal tunnel to be increased, the median nerve to be shifted to the palmar side and the median nerve to be compressed by the transverse carpal ligament at that time. Although we can observe these morphological changes readily in MRI images, these images show only the results of carpal tunnel syndrome after all, and do not specify the direct causes. However, we believe that these facts are important factors in the manifestation of idiopathic carpal tunnel syndrome. (author)

  7. Clinical Evaluation of Normalized Metal Artifact Reduction in kVCT Using MVCT Prior Images (MVCT-NMAR) for Radiation Therapy Treatment Planning

    Energy Technology Data Exchange (ETDEWEB)

    Paudel, Moti Raj, E-mail: mpaudel@ualberta.ca [Department of Oncology, University of Alberta, Edmonton, AB (Canada); Mackenzie, Marc [Department of Oncology, University of Alberta, Edmonton, AB (Canada); Fallone, B. Gino [Department of Oncology, University of Alberta, Edmonton, AB (Canada); Department of Physics, University of Alberta, Edmonton, AB (Canada); Department of Medical Physics, Cross Cancer Institute, Edmonton, AB (Canada); Rathee, Satyapal [Department of Oncology, University of Alberta, Edmonton, AB (Canada); Department of Medical Physics, Cross Cancer Institute, Edmonton, AB (Canada)

    2014-07-01

    Purpose: To evaluate the metal artifacts in diagnostic kilovoltage computed tomography (kVCT) images of patients that are corrected by use of a normalized metal artifact reduction (NMAR) method with megavoltage CT (MVCT) prior images: MVCT-NMAR. Methods and Materials: MVCT-NMAR was applied to images from 5 patients: 3 with dual hip prostheses, 1 with a single hip prosthesis, and 1 with dental fillings. The corrected images were evaluated for visualization of tissue structures and their interfaces and for radiation therapy dose calculations. They were compared against the corresponding images corrected by the commercial orthopedic metal artifact reduction algorithm in a Phillips CT scanner. Results: The use of MVCT images for correcting kVCT images in the MVCT-NMAR technique greatly reduces metal artifacts, avoids secondary artifacts, and makes patient images more useful for correct dose calculation in radiation therapy. These improvements are significant, provided the MVCT and kVCT images are correctly registered. The remaining and the secondary artifacts (soft tissue blurring, eroded bones, false bones or air pockets, CT number cupping within the metal) present in orthopedic metal artifact reduction corrected images are removed in the MVCT-NMAR corrected images. A large dose reduction was possible outside the planning target volume (eg, 59.2 Gy to 52.5 Gy in pubic bone) when these MVCT-NMAR corrected images were used in TomoTherapy treatment plans without directional blocks for a prostate cancer patient. Conclusions: The use of MVCT-NMAR corrected images in radiation therapy treatment planning could improve the treatment plan quality for patients with metallic implants.

  8. Elastic properties of superconducting bulk metallic glasses

    International Nuclear Information System (INIS)

    Hempel, Marius

    2015-01-01

    Within the framework of this thesis the elastic properties of a superconducting bulk metallic glass between 10 mK and 300 K were first investigated. In order to measure the entire temperature range, in particular the low temperature part, new experimental techniques were developed. Using an inductive readout scheme for a double paddle oscillator it was possible to determine the internal friction and the relative change of sound velocity of bulk metallic glasses with high precision. This allowed for a detailed comparison of the data with different models. The analysis focuses on the low temperature regime where the properties of glassy materials are governed by atomic tunneling systems as described by the tunneling model. The influence of conduction electrons in the normal conducting state and quasiparticles in the superconducting state of the glass were accounted for in the theoretical description, resulting in a good agreement over a large temperature range between measured data and prediction of the tunneling model. This allowed for a direct determination of the coupling constant between electrons and tunneling systems. In the vicinity of the transition temperature Tc the data can only be described if a modified distribution function of the tunneling parameters is applied.

  9. Spin-dependent tunnelling at infrared frequencies: magnetorefractive effect in magnetic nanocomposites

    International Nuclear Information System (INIS)

    Granovsky, A.B.; Inoue, Mitsuteru

    2004-01-01

    We present a brief review of recent experimental and theoretical results on magnetorefractive effect in magnetic metal-insulator nanogranular alloys with tunnel-type magnetoresistance focusing on its relation with high-frequency spin-dependent tunnelling

  10. Spin-dependent tunnelling at infrared frequencies: magnetorefractive effect in magnetic nanocomposites

    Energy Technology Data Exchange (ETDEWEB)

    Granovsky, A.B. E-mail: granov@magn.ru; Inoue, Mitsuteru

    2004-05-01

    We present a brief review of recent experimental and theoretical results on magnetorefractive effect in magnetic metal-insulator nanogranular alloys with tunnel-type magnetoresistance focusing on its relation with high-frequency spin-dependent tunnelling.

  11. Dielectric Sensors Based on Electromagnetic Energy Tunneling

    Science.gov (United States)

    Siddiqui, Omar; Kashanianfard, Mani; Ramahi, Omar

    2015-01-01

    We show that metallic wires embedded in narrow waveguide bends and channels demonstrate resonance behavior at specific frequencies. The electromagnetic energy at these resonances tunnels through the narrow waveguide channels with almost no propagation losses. Under the tunneling behavior, high-intensity electromagnetic fields are produced in the vicinity of the metallic wires. These intense field resonances can be exploited to build highly sensitive dielectric sensors. The sensor operation is explained with the help of full-wave simulations. A practical setup consisting of a 3D waveguide bend is presented to experimentally observe the tunneling phenomenon. The tunneling frequency is predicted by determining the input impedance minima through a variational formula based on the Green function of a probe-excited parallel plate waveguide. PMID:25835188

  12. Dielectric Sensors Based on Electromagnetic Energy Tunneling

    Directory of Open Access Journals (Sweden)

    Omar Siddiqui

    2015-03-01

    Full Text Available We show that metallic wires embedded in narrow waveguide bends and channels demonstrate resonance behavior at specific frequencies. The electromagnetic energy at these resonances tunnels through the narrow waveguide channels with almost no propagation losses. Under the tunneling behavior, high-intensity electromagnetic fields are produced in the vicinity of the metallic wires. These intense field resonances can be exploited to build highly sensitive dielectric sensors. The sensor operation is explained with the help of full-wave simulations. A practical setup consisting of a 3D waveguide bend is presented to experimentally observe the tunneling phenomenon. The tunneling frequency is predicted by determining the input impedance minima through a variational formula based on the Green function of a probe-excited parallel plate waveguide.

  13. Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor.

    Science.gov (United States)

    Kanaki, Toshiki; Yamasaki, Hiroki; Koyama, Tomohiro; Chiba, Daichi; Ohya, Shinobu; Tanaka, Masaaki

    2018-05-08

    A vertical spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) is a promising low-power device for the post scaling era. Here, using a ferromagnetic-semiconductor GaMnAs-based vertical spin MOSFET with a GaAs channel layer, we demonstrate a large drain-source current I DS modulation by a gate-source voltage V GS with a modulation ratio up to 130%, which is the largest value that has ever been reported for vertical spin field-effect transistors thus far. We find that the electric field effect on indirect tunneling via defect states in the GaAs channel layer is responsible for the large I DS modulation. This device shows a tunneling magnetoresistance (TMR) ratio up to ~7%, which is larger than that of the planar-type spin MOSFETs, indicating that I DS can be controlled by the magnetization configuration. Furthermore, we find that the TMR ratio can be modulated by V GS . This result mainly originates from the electric field modulation of the magnetic anisotropy of the GaMnAs ferromagnetic electrodes as well as the potential modulation of the nonmagnetic semiconductor GaAs channel layer. Our findings provide important progress towards high-performance vertical spin MOSFETs.

  14. Determination of Heavy Metal Concentrations in Normal and Pathological Human Endometrial Biopsies and In Vitro Regulation of Gene Expression by Metals in the Ishikawa and Hec-1b Endometrial Cell Line.

    Directory of Open Access Journals (Sweden)

    Erwan Guyot

    Full Text Available It is well known that several metals, such as lead, mercury, cadmium, and vanadium, can mimic the effects of estrogens (metallo-estrogens. Nevertheless, there are only a few studies that have assessed the effects of toxic metals on the female genital tract and, in particular, endometrial tissue. In this context, we measured the concentrations of several trace elements in human endometrial tissue samples from individuals with hyperplasia or adenocarcinoma and in normal tissues. Hyperplasic endometrial tissue has a 4-fold higher concentration of mercury than normal tissue. Mercury can affect both the AhR and ROS signaling pathways. Thus, we investigated the possible toxic effects of mercury by in vitro studies. We found that mercury increases oxidative stress (increased HO1 and NQO1 mRNA levels and alters the cytoskeleton in the human endometrial Ishikawa cell line and to a lesser extent, in the "less-differentiated" human endometrial Hec-1b cells. The results might help to explain a potential link between this metal and the occurrence of endometrial hyperplasia.

  15. Determination of Heavy Metal Concentrations in Normal and Pathological Human Endometrial Biopsies and In Vitro Regulation of Gene Expression by Metals in the Ishikawa and Hec-1b Endometrial Cell Line

    Science.gov (United States)

    Tomkiewicz, Céline; Leblanc, Alix; Pierre, Stéphane; El Balkhi, Souleiman; Le Frère-Belda, Marie-Aude; Lecuru, Fabrice; Poupon, Joël; Barouki, Robert; Aggerbeck, Martine; Coumoul, Xavier

    2015-01-01

    It is well known that several metals, such as lead, mercury, cadmium, and vanadium, can mimic the effects of estrogens (metallo-estrogens). Nevertheless, there are only a few studies that have assessed the effects of toxic metals on the female genital tract and, in particular, endometrial tissue. In this context, we measured the concentrations of several trace elements in human endometrial tissue samples from individuals with hyperplasia or adenocarcinoma and in normal tissues. Hyperplasic endometrial tissue has a 4-fold higher concentration of mercury than normal tissue. Mercury can affect both the AhR and ROS signaling pathways. Thus, we investigated the possible toxic effects of mercury by in vitro studies. We found that mercury increases oxidative stress (increased HO1 and NQO1 mRNA levels) and alters the cytoskeleton in the human endometrial Ishikawa cell line and to a lesser extent, in the “less-differentiated” human endometrial Hec-1b cells. The results might help to explain a potential link between this metal and the occurrence of endometrial hyperplasia. PMID:26600472

  16. Charge Transport in 2D DNA Tunnel Junction Diodes

    KAUST Repository

    Yoon, Minho

    2017-11-06

    Recently, deoxyribonucleic acid (DNA) is studied for electronics due to its intrinsic benefits such as its natural plenitude, biodegradability, biofunctionality, and low-cost. However, its applications are limited to passive components because of inherent insulating properties. In this report, a metal-insulator-metal tunnel diode with Au/DNA/NiOx junctions is presented. Through the self-aligning process of DNA molecules, a 2D DNA nanosheet is synthesized and used as a tunneling barrier, and semitransparent conducting oxide (NiOx ) is applied as a top electrode for resolving metal penetration issues. This molecular device successfully operates as a nonresonant tunneling diode, and temperature-variable current-voltage analysis proves that Fowler-Nordheim tunneling is a dominant conduction mechanism at the junctions. DNA-based tunneling devices appear to be promising prototypes for nanoelectronics using biomolecules.

  17. Charge Transport in 2D DNA Tunnel Junction Diodes

    KAUST Repository

    Yoon, Minho; Min, Sung-Wook; Dugasani, Sreekantha Reddy; Lee, Yong Uk; Oh, Min Suk; Anthopoulos, Thomas D.; Park, Sung Ha; Im, Seongil

    2017-01-01

    Recently, deoxyribonucleic acid (DNA) is studied for electronics due to its intrinsic benefits such as its natural plenitude, biodegradability, biofunctionality, and low-cost. However, its applications are limited to passive components because of inherent insulating properties. In this report, a metal-insulator-metal tunnel diode with Au/DNA/NiOx junctions is presented. Through the self-aligning process of DNA molecules, a 2D DNA nanosheet is synthesized and used as a tunneling barrier, and semitransparent conducting oxide (NiOx ) is applied as a top electrode for resolving metal penetration issues. This molecular device successfully operates as a nonresonant tunneling diode, and temperature-variable current-voltage analysis proves that Fowler-Nordheim tunneling is a dominant conduction mechanism at the junctions. DNA-based tunneling devices appear to be promising prototypes for nanoelectronics using biomolecules.

  18. Alkali-Metal-Mediated Magnesiations of an N-Heterocyclic Carbene: Normal, Abnormal, and "Paranormal" Reactivity in a Single Tritopic Molecule.

    Science.gov (United States)

    Martínez-Martínez, Antonio J; Fuentes, M Ángeles; Hernán-Gómez, Alberto; Hevia, Eva; Kennedy, Alan R; Mulvey, Robert E; O'Hara, Charles T

    2015-11-16

    Herein the sodium alkylmagnesium amide [Na4Mg2(TMP)6(nBu)2] (TMP=2,2,6,6-tetramethylpiperidide), a template base as its deprotonating action is dictated primarily by its 12 atom ring structure, is studied with the common N-heterocyclic carbene (NHC) IPr [1,3-bis(2,6-diisopropylphenyl)imidazol-2-ylidene]. Remarkably, magnesiation of IPr occurs at the para-position of an aryl substituent, sodiation occurs at the abnormal C4 position, and a dative bond occurs between normal C2 and sodium, all within a 20 atom ring structure accommodating two IPr(2-). Studies with different K/Mg and Na/Mg bimetallic bases led to two other magnesiated NHC structures containing two or three IPr(-) monoanions bound to Mg through abnormal C4 sites. Synergistic in that magnesiation can only work through alkali-metal mediation, these reactions add magnesium to the small cartel of metals capable of directly metalating a NHC. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Scanning tunneling microscopic images and scanning tunneling spectra for coupled rectangular quantum corrals

    International Nuclear Information System (INIS)

    Mitsuoka, Shigenori; Tamura, Akira

    2011-01-01

    Assuming that an electron confined by double δ-function barriers lies in a quasi-stationary state, we derived eigenstates and eigenenergies of the electron. Such an electron has a complex eigenenergy, and the imaginary part naturally leads to the lifetime of the electron associated with tunneling through barriers. We applied this point of view to the electron confined in a rectangular quantum corral (QC) on a noble metal surface, and obtained scanning tunneling microscopic images and a scanning tunneling spectrum consistent with experimental ones. We investigated the electron states confined in coupled QCs and obtained the coupled states constructed with bonding and anti-bonding states. Using those energy levels and wavefunctions we specified scanning tunneling microscope (STM) images and scanning tunneling spectra (STS) for the doubly and triply coupled QCs. In addition we pointed out the feature of resonant electron states associated with the same QCs at both ends of the triply coupled QCs.

  20. Single-atom contacts with a scanning tunnelling microscope

    International Nuclear Information System (INIS)

    Kroeger, J; Neel, N; Sperl, A; Wang, Y F; Berndt, R

    2009-01-01

    The tip of a cryogenic scanning tunnelling microscope is used to controllably contact single atoms adsorbed on metal surfaces. The transition between tunnelling and contact is gradual for silver, while contact to adsorbed gold atoms is abrupt. The single-atom junctions are stable and enable spectroscopic measurements of, e.g., the Abrikosov-Suhl resonance of single Kondo impurities.

  1. Photoelectrical properties of semiconductor tips in scanning tunneling microscopy

    NARCIS (Netherlands)

    Prins, M.W.J.; Jansen, R.; Groeneveld, R.H.M.; Gelder, Van A.P.; Kempen, van H.

    1996-01-01

    We describe a model as well as experiments on the electrical properties of a photoexcited tunnel junction between a metal and a semiconductor material, as is established in a scanning tunneling microscope. The model treats the case in which carrier transport is mediated by capture and relaxation in

  2. Resonant tunnel magnetoresistance in a double magnetic tunnel junction

    KAUST Repository

    Useinov, Arthur

    2011-08-09

    We present quasi-classical approach to calculate a spin-dependent current and tunnel magnetoresistance (TMR) in double magnetic tunnel junctions (DMTJ) FML/I/FMW/I/FMR, where the magnetization of the middle ferromagnetic metal layer FMW can be aligned parallel or antiparallel with respect to the fixed magnetizations of the left FML and right FMR ferromagnetic electrodes. The transmission coefficients for components of the spin-dependent current, and TMR are calculated as a function of the applied voltage. As a result, we found a high resonant TMR. Thus, DMTJ can serve as highly effective magnetic nanosensor for biological applications, or as magnetic memory cells by switching the magnetization of the inner ferromagnetic layer FMW.© Springer Science+Business Media, LLC 2011.

  3. Transonic Dynamics Tunnel (TDT)

    Data.gov (United States)

    Federal Laboratory Consortium — The Transonic Dynamics Tunnel (TDT) is a continuous flow wind-tunnel facility capable of speeds up to Mach 1.2 at stagnation pressures up to one atmosphere. The TDT...

  4. Quantum theory of tunneling

    CERN Document Server

    Razavy, Mohsen

    2014-01-01

    In this revised and expanded edition, in addition to a comprehensible introduction to the theoretical foundations of quantum tunneling based on different methods of formulating and solving tunneling problems, different semiclassical approximations for multidimensional systems are presented. Particular attention is given to the tunneling of composite systems, with examples taken from molecular tunneling and also from nuclear reactions. The interesting and puzzling features of tunneling times are given extensive coverage, and the possibility of measurement of these times with quantum clocks are critically examined. In addition by considering the analogy between evanescent waves in waveguides and in quantum tunneling, the times related to electromagnetic wave propagation have been used to explain certain aspects of quantum tunneling times. These topics are treated in both non-relativistic as well as relativistic regimes. Finally, a large number of examples of tunneling in atomic, molecular, condensed matter and ...

  5. Road and Railroad Tunnels

    Data.gov (United States)

    Department of Homeland Security — Tunnels in the United States According to the HSIP Tiger Team Report, a tunnel is defined as a linear underground passageway open at both ends. This dataset is based...

  6. Hypersonic Tunnel Facility (HTF)

    Data.gov (United States)

    Federal Laboratory Consortium — The Hypersonic Tunnel Facility (HTF) is a blow-down, non-vitiated (clean air) free-jet wind tunnel capable of testing large-scale, propulsion systems at Mach 5, 6,...

  7. Cost comparison between Subterrene and current tunneling methods. Final report

    International Nuclear Information System (INIS)

    Bledsoe, J.D.; Hill, J.E.; Coon, R.F.

    1975-05-01

    A study was made to compare tunnel construction costs between the Subterrene tunneling system and methods currently in use. Three completed tunnels were selected for study cases to represent finished diameters ranging from 3.05 meters (10 feet) to 6.25 meters (20.5 feet). The study cases were normalized by deleting extraneous work and assigning labor, equipment, and materials costs for the Southern California area in 1974. Detailed cost estimates (shown in Appendix A) were then made for the three tunnels for baseline. A conceptual nuclear powered Subterrene tunneling machine (NSTM) was designed. It was assumed that NSTM's were available for each of the three baseline tunnels. Costs were estimated (shown in Appendix B) for the baseline tunnels driven by NSTM

  8. Air quality assessment in Salim Slam Tunnel

    International Nuclear Information System (INIS)

    El-Fadel, M.; Hashisho, Z.; Saikaly, P.

    1999-01-01

    Full text.Vehicle emissions constitute a serious occupational environmental hazard particularly in confined spaces such as tunnels and underground parking garages. these emissions at elevated concentrations, can cause adverse health effects, which range from nausea and eye irritation to mutagenicity, carcinogenicity and even death. This paper presents an environmental air quality assessment in a tunnel located in a highly congested urban area. For this purpose, air samples were collected and analyzed for the presence of primary air pollutants, priority metals, and volatile organic carbons. Air quality modeling was conducted to simulate variations of pollutant concentrations in the tunnel under worst case scenarios including traffic congestion and no air ventilation. Field measurements and mathematical simulation results were used to develop a strategy for proper air quality management in tunnels

  9. Tunnel magnetoresistance in double spin filter junctions

    International Nuclear Information System (INIS)

    Saffarzadeh, Alireza

    2003-01-01

    We consider a new type of magnetic tunnel junction, which consists of two ferromagnetic tunnel barriers acting as spin filters (SFs), separated by a nonmagnetic metal (NM) layer. Using the transfer matrix method and the free-electron approximation, the dependence of the tunnel magnetoresistance (TMR) on the thickness of the central NM layer, bias voltage and temperature in the double SF junction are studied theoretically. It is shown that the TMR and electron-spin polarization in this structure can reach very large values under suitable conditions. The highest value of the TMR can reach 99%. By an appropriate choice of the thickness of the central NM layer, the degree of spin polarization in this structure will be higher than that of the single SF junctions. These results may be useful in designing future spin-polarized tunnelling devices

  10. Thermal stress in the scanning tunneling microscopy of the metallic heterostructure lead on copper(111); Thermospannung bei der Rastertunnelmikroskopie der metallischen Heterostruktur Blei auf Kupfer(111)

    Energy Technology Data Exchange (ETDEWEB)

    Langenkamp, Winfried

    2008-02-22

    The thermal stress, which arises, when tip and sample of a scanning tunneling microscope have different temperatures, was studied in the system lead on copper(111). Thereby atomic resolution on the 4 x 4 superstructure of the lead atoms of the first layer was reached. The thermal stress of lead island was studied because the electronic density of states here is in the greatest part determined by quantum pot states. The density of states as function of the energy can by approached as step function und is by this available for a mathematical modelling. As sum of the influence of the substrates and the influence by the quantum pot states it bas possible to develop a model. in which the thermal stress for lead islands on copper(111) can be described also quantitatively.

  11. GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition

    Science.gov (United States)

    Lee, SeungGeun; Forman, Charles A.; Lee, Changmin; Kearns, Jared; Young, Erin C.; Leonard, John T.; Cohen, Daniel A.; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P.

    2018-06-01

    We report the first demonstration of III–nitride vertical-cavity surface-emitting lasers (VCSELs) with tunnel junction (TJ) intracavity contacts grown completely by metal–organic chemical vapor deposition (MOCVD). For the TJs, n++-GaN was grown on in-situ activated p++-GaN after buffered HF surface treatment. The electrical properties and epitaxial morphologies of the TJs were first investigated on TJ LED test samples. A VCSEL with a TJ intracavity contact showed a lasing wavelength of 408 nm, a threshold current of ∼15 mA (10 kA/cm2), a threshold voltage of 7.8 V, a maximum output power of 319 µW, and a differential efficiency of 0.28%.

  12. Two-dimensional turning of thermal flux from normal to lateral propagation in thin metal film irradiated by femtosecond laser pulse

    Science.gov (United States)

    Shepelev, V. V.; Inogamov, N. A.

    2018-01-01

    There are various geometrical variants of laser illumination and target design. Important direction of investigations is connected with tightly focused action (spot size may be less than micron) onto a thin metal film: thickness of a film is just few skin-layer depths. Duration of a pulse is τ L ˜ 0.1 ps. In these conditions energy absorbed in a skin layer first propagates normally to a surface: gradient ∂Te /∂x dominates, here and below x and y are normal and lateral directions. This process in 1-2 ps homogenizes electron temperature T e along thickness of a film. We consider conditions when a film or is supported by weakly conducting substrate, or is free standing. Therefore all absorbed energy is confined inside the film. At the next stage the internal energy begin to flow along the lateral direction—thus direction of energy expansion is changed from x to y because of the heat non-penetrating boundary condition imposed on the rear-side of the film. At the short two-temperature stage of lateral expansion the thermal conductivity κ is high. After that electron and ion temperatures equilibrates and later on the heat propagates with usual value of κ. Lateral expansion cools down the hot spot on long time scales and finally the molten spot recrystallizes. Two-dimensional approach allows us to consider all these stages from propagation in x direction (normal to a film) to propagation in y direction (along a film).

  13. Theory of inelastic electron tunneling from a localized spin in the impulsive approximation.

    Science.gov (United States)

    Persson, Mats

    2009-07-31

    A simple expression for the conductance steps in inelastic electron tunneling from spin excitations in a single magnetic atom adsorbed on a nonmagnetic metal surface is derived. The inelastic coupling between the tunneling electron and the spin is via the exchange coupling and is treated in an impulsive approximation using the Tersoff-Hamann approximation for the tunneling between the tip and the sample.

  14. Scanning Tunneling Spectroscope Use in Electrocatalysis Testing

    Science.gov (United States)

    Knutsen, Turid

    2010-01-01

    The relationship between the electrocatalytic properties of an electrode and its ability to transfer electrons between the electrode and a metallic tip in a scanning tunneling microscope (STM) is investigated. The alkaline oxygen evolution reaction (OER) was used as a test reaction with four different metallic glasses, Ni78Si8B14, Ni70Mo20Si5B5, Ni58Co20Si10B12, and Ni25Co50Si15B10, as electrodes. The electrocatalytic properties of the electrodes were determined. The electrode surfaces were then investigated with an STM. A clear relationship between the catalytic activity of an electrode toward the OER and its tunneling characteristics was found. The use of a scanning tunneling spectroscope (STS) in electrocatalytic testing may increase the efficiency of the optimization of electrochemical processes.

  15. Scanning Tunneling Spectroscope Use in Electrocatalysis Testing

    Directory of Open Access Journals (Sweden)

    Turid Knutsen

    2010-06-01

    Full Text Available The relationship between the electrocatalytic properties of an electrode and its ability to transfer electrons between the electrode and a metallic tip in a scanning tunneling microscope (STM is investigated. The alkaline oxygen evolution reaction (OER was used as a test reaction with four different metallic glasses, Ni78Si8B14, Ni70Mo20Si5B5, Ni58Co20Si10B12, and Ni25Co50Si15B10, as electrodes. The electrocatalytic properties of the electrodes were determined. The electrode surfaces were then investigated with an STM. A clear relationship between the catalytic activity of an electrode toward the OER and its tunneling characteristics was found. The use of a scanning tunneling spectroscope (STS in electrocatalytic testing may increase the efficiency of the optimization of electrochemical processes.

  16. Proton tunneling in solids

    Energy Technology Data Exchange (ETDEWEB)

    Kondo, J.

    1998-10-01

    The tunneling rate of the proton and its isotopes between interstitial sites in solids is studied theoretically. The phonons and/or the electrons in the solid have two effects on the tunneling phenomenon. First, they suppress the transfer integral between two neighbouring states. Second, they give rise to a finite lifetime of the proton state. Usually the second effect is large and the tunneling probability per unit time (tunneling rate) can be defined. In some cases, however, a coherent tunneling is expected and actually observed. (author)

  17. Proton tunneling in solids

    International Nuclear Information System (INIS)

    Kondo, J.

    1998-01-01

    The tunneling rate of the proton and its isotopes between interstitial sites in solids is studied theoretically. The phonons and/or the electrons in the solid have two effects on the tunneling phenomenon. First, they suppress the transfer integral between two neighbouring states. Second, they give rise to a finite lifetime of the proton state. Usually the second effect is large and the tunneling probability per unit time (tunneling rate) can be defined. In some cases, however, a coherent tunneling is expected and actually observed. (author)

  18. Construction and performance of a dilution-refrigerator based spectroscopic-imaging scanning tunneling microscope.

    Science.gov (United States)

    Singh, U R; Enayat, M; White, S C; Wahl, P

    2013-01-01

    We report on the set-up and performance of a dilution-refrigerator based spectroscopic imaging scanning tunneling microscope. It operates at temperatures below 10 mK and in magnetic fields up to 14T. The system allows for sample transfer and in situ cleavage. We present first-results demonstrating atomic resolution and the multi-gap structure of the superconducting gap of NbSe(2) at base temperature. To determine the energy resolution of our system we have measured a normal metal/vacuum/superconductor tunneling junction consisting of an aluminum tip on a gold sample. Our system allows for continuous measurements at base temperature on time scales of up to ≈170 h.

  19. MgB2 energy gap determination by scanning tunnelling spectroscopy

    International Nuclear Information System (INIS)

    Heitmann, T W; Bu, S D; Kim, D M; Choi, J H; Giencke, J; Eom, C B; Regan, K A; Rogado, N; Hayward, M A; He, T; Slusky, J S; Khalifah, P; Haas, M; Cava, R J; Larbalestier, D C; Rzchowski, M S

    2004-01-01

    We report scanning tunnelling spectroscopy (STS) measurements of the gap properties of both ceramic MgB 2 and c-axis oriented epitaxial MgB 2 thin films. Both show a temperature dependent zero bias conductance peak and evidence for two superconducting gaps. We report tunnelling spectroscopy of superconductor-insulator-superconductor (S-I-S) junctions formed in two ways in addition to normal metal-insulator-superconductor (N-I-S) junctions. We find a gap δ = 2.2-2.8 meV, with spectral features and temperature dependence that are consistent between S-I-S junction types. In addition, we observe evidence of a second, larger gap, δ 7.2 meV, consistent with a proposed two-band model

  20. Reactive tunnel junctions in electrically driven plasmonic nanorod metamaterials

    Science.gov (United States)

    Wang, Pan; Krasavin, Alexey V.; Nasir, Mazhar E.; Dickson, Wayne; Zayats, Anatoly V.

    2018-02-01

    Non-equilibrium hot carriers formed near the interfaces of semiconductors or metals play a crucial role in chemical catalysis and optoelectronic processes. In addition to optical illumination, an efficient way to generate hot carriers is by excitation with tunnelling electrons. Here, we show that the generation of hot electrons makes the nanoscale tunnel junctions highly reactive and facilitates strongly confined chemical reactions that can, in turn, modulate the tunnelling processes. We designed a device containing an array of electrically driven plasmonic nanorods with up to 1011 tunnel junctions per square centimetre, which demonstrates hot-electron activation of oxidation and reduction reactions in the junctions, induced by the presence of O2 and H2 molecules, respectively. The kinetics of the reactions can be monitored in situ following the radiative decay of tunnelling-induced surface plasmons. This electrically driven plasmonic nanorod metamaterial platform can be useful for the development of nanoscale chemical and optoelectronic devices based on electron tunnelling.

  1. Tunneling spectroscopy of quasiparticle bound states in a spinful Josephson junction.

    Science.gov (United States)

    Chang, W; Manucharyan, V E; Jespersen, T S; Nygård, J; Marcus, C M

    2013-05-24

    The spectrum of a segment of InAs nanowire, confined between two superconducting leads, was measured as function of gate voltage and superconducting phase difference using a third normal-metal tunnel probe. Subgap resonances for odd electron occupancy-interpreted as bound states involving a confined electron and a quasiparticle from the superconducting leads, reminiscent of Yu-Shiba-Rusinov states-evolve into Kondo-related resonances at higher magnetic fields. An additional zero-bias peak of unknown origin is observed to coexist with the quasiparticle bound states.

  2. Temperature-dependent transitions between normal and inverse isotope effects pertaining to the interaction of H-H and C-H bonds with transition metal centers.

    Science.gov (United States)

    Parkin, Gerard

    2009-02-17

    Deuterium kinetic isotope effects (KIEs) serve as versatile tools to infer details about reaction mechanisms and the nature of transition states, while equilibrium isotope effects (EIEs) associated with the site preferences of hydrogen and deuterium enable researchers to study aspects of molecular structure. Researchers typically interpret primary deuterium isotope effects based on two simple guidelines: (i) the KIE for an elementary reaction is normal (k(H)/k(D) > 1) and (ii) the EIE is dictated by deuterium preferring to be located in the site corresponding to the highest frequency oscillator. In this Account, we evaluate the applicability of these rules to the interactions of H-H and C-H bonds with a transition metal center. Significantly, experimental and computational studies question the predictability of primary EIEs in these systems based on the notion that deuterium prefers to occupy the highest frequency oscillator. In particular, the EIEs for (i) formation of sigma-complexes by coordination of H-H and C-H bonds and (ii) oxidative addition of dihydrogen exhibit unusual temperature dependencies, such that the same system may demonstrate both normal (i.e., K(H)/K(D) > 1) and inverse (i.e., K(H)/K(D) ZPE (where SYM is the symmetry factor, MMI is the mass-moment of inertia term, EXC is the excitation term, and ZPE is the zero-point energy term), and the distinctive temperature profile results from the inverse ZPE (enthalpy) and normal [SYM x MMI x EXC] (entropy) components opposing each other and having different temperature dependencies. At low temperatures, the ZPE component dominates and the EIE is inverse, while at high temperatures, the [SYM x MMI x EXC] component dominates and the EIE is normal. The inverse nature of the ZPE term is a consequence of the rotational and translational degrees of freedom of RH (R = H, CH(3)) becoming low-energy isotopically sensitive vibrations in the product, while the normal nature of the [SYM x MMI x EXC] component

  3. Atomically Thin Al2O3 Films for Tunnel Junctions

    Science.gov (United States)

    Wilt, Jamie; Gong, Youpin; Gong, Ming; Su, Feifan; Xu, Huikai; Sakidja, Ridwan; Elliot, Alan; Lu, Rongtao; Zhao, Shiping; Han, Siyuan; Wu, Judy Z.

    2017-06-01

    Metal-insulator-metal tunnel junctions are common throughout the microelectronics industry. The industry standard AlOx tunnel barrier, formed through oxygen diffusion into an Al wetting layer, is plagued by internal defects and pinholes which prevent the realization of atomically thin barriers demanded for enhanced quantum coherence. In this work, we employ in situ scanning tunneling spectroscopy along with molecular-dynamics simulations to understand and control the growth of atomically thin Al2O3 tunnel barriers using atomic-layer deposition. We find that a carefully tuned initial H2O pulse hydroxylated the Al surface and enabled the creation of an atomically thin Al2O3 tunnel barrier with a high-quality M -I interface and a significantly enhanced barrier height compared to thermal AlOx . These properties, corroborated by fabricated Josephson junctions, show that atomic-layer deposition Al2O3 is a dense, leak-free tunnel barrier with a low defect density which can be a key component for the next generation of metal-insulator-metal tunnel junctions.

  4. Proceedings of the meeting on tunneling reaction and low temperature chemistry, 98 August. Tunneling reaction and its theory

    Energy Technology Data Exchange (ETDEWEB)

    Miyazaki, Tetsuo; Aratono, Yasuyuki; Ichikawa, Tsuneki; Shiotani, Masaru [eds.

    1998-10-01

    Present report is the proceedings of the 4th Meeting on Tunneling Reaction and Low Temperature Chemistry held in August 3 and 4, 1998. The main subject of the meeting is `Tunneling Reaction and Its Theory`. In the present meeting the theoretical aspects of tunneling phenomena in the chemical reaction were discussed intensively as the main topics. Ten reports were presented on the quantum diffusion of muon and proton in the metal and H{sub 2}{sup -} anion in the solid para-hydrogen, the theory of tunnel effect in the nuclear reaction and the tunneling reaction in the organic compounds. One special lecture was presented by Prof. J. Kondo on `Proton Tunneling in Solids`. The 11 of the presented papers are indexed individually. (J.P.N.)

  5. Chiral tunneling in a twisted graphene bilayer.

    Science.gov (United States)

    He, Wen-Yu; Chu, Zhao-Dong; He, Lin

    2013-08-09

    The perfect transmission in a graphene monolayer and the perfect reflection in a Bernal graphene bilayer for electrons incident in the normal direction of a potential barrier are viewed as two incarnations of the Klein paradox. Here we show a new and unique incarnation of the Klein paradox. Owing to the different chiralities of the quasiparticles involved, the chiral fermions in a twisted graphene bilayer show an adjustable probability of chiral tunneling for normal incidence: they can be changed from perfect tunneling to partial or perfect reflection, or vice versa, by controlling either the height of the barrier or the incident energy. As well as addressing basic physics about how the chiral fermions with different chiralities tunnel through a barrier, our results provide a facile route to tune the electronic properties of the twisted graphene bilayer.

  6. Tunneling emission of electrons from semiconductors' valence bands in high electric fields

    International Nuclear Information System (INIS)

    Kalganov, V. D.; Mileshkina, N. V.; Ostroumova, E. V.

    2006-01-01

    Tunneling emission currents of electrons from semiconductors to vacuum (needle-shaped GaAs photodetectors) and to a metal (silicon metal-insulator-semiconductor diodes with a tunneling-transparent insulator layer) are studied in high and ultrahigh electric fields. It is shown that, in semiconductors with the n-type conductivity, the major contribution to the emission current is made by the tunneling emission of electrons from the valence band of the semiconductor, rather than from the conduction band

  7. Structural Series in the Ternary A-Mn-As System (A = Alkali Metal): Double-Layer-Type CsMn4As3 and RbMn4As3 and Tunnel-Type KMn4As3.

    Science.gov (United States)

    Ishida, Junichi; Iimura, Soshi; Hosono, Hideo

    2018-04-16

    New manganese arsenides CsMn 4 As 3 , RbMn 4 As 3 , and KMn 4 As 3 were synthesized by solid-state reaction. They consist of edge-sharing MnAs 4 tetrahedra, which are a building block similar to those of Fe-based superconductors. CsMn 4 As 3 and RbMn 4 As 3 adopt the KCu 4 S 3 -type structure (tetragonal P4/ mmm space group, No. 123) with a Mn 4 As 3 double layer, while KMn 4 As 3 has the CaFe 4 As 3 -type structure (orthorhombic Pnma space group, No. 62) with a Mn 4 As 3 tunnel framework. The structural change from CsMn 4 As 3 and RbMn 4 As 3 to KMn 4 As 3 as well as the structural trend of the other ternary A-Mn-As (A = alkali metal) and AE-Mn-As (AE = alkaline-earth metal) compounds is understood as a consequence of reduction of the coordination number around the A and AE sites owing to the decrease of the ionic radius from Cs + to Mg 2+ . Electrical resistivity measurements confirm that the three new phases are Mott insulators with band gaps of 0.52 (CsMn 4 As 3 ), 0.43 (RbMn 4 As 3 ), and 0.31 eV (KMn 4 As 3 ). Magnetic and heat capacity measurements revealed that CsMn 4 As 3 and RbMn 4 As 3 are antiferromagnets without apparent phase transitions below 400 K, which is similar to the magnetism of LaMnAsO and BaMn 2 As 2 , while the existence of the ferromagnetic component was indicated in KMn 4 As 3 with a magnetic transition at 179 K.

  8. Resonant tunnel magnetoresistance in double-barrier planar magnetic tunnel junctions

    KAUST Repository

    Useinov, A. N.

    2011-08-24

    We present a theoretical approach to calculate the spin-dependent current and tunnel magnetoresistance (TMR) in a double-barrier magnetic tunnel junction (DMTJ), in which the magnetization of the middle ferromagnetic metal layer can be aligned parallel or antiparallel in relation to the fixed magnetizations of the left and right ferromagnetic electrodes. The electron transport through the DMTJ is considered as a three-dimensional problem, taking into account all transmitting electron trajectories as well as the spin-dependent momentum conservation law. The dependence of the transmission coefficient and spin-polarized currents on the applied voltage is derived as an exact solution to the quantum-mechanical problem for the spin-polarized transport. In the range of the developed physical model, the resonant tunneling, nonresonant tunneling, and enhanced spin filtering can be explained; the simulation results are in good agreement with experimental data.

  9. Resonant tunnel magnetoresistance in double-barrier planar magnetic tunnel junctions

    KAUST Repository

    Useinov, A. N.; Kosel, Jü rgen; Useinov, N. Kh.; Tagirov, L. R.

    2011-01-01

    We present a theoretical approach to calculate the spin-dependent current and tunnel magnetoresistance (TMR) in a double-barrier magnetic tunnel junction (DMTJ), in which the magnetization of the middle ferromagnetic metal layer can be aligned parallel or antiparallel in relation to the fixed magnetizations of the left and right ferromagnetic electrodes. The electron transport through the DMTJ is considered as a three-dimensional problem, taking into account all transmitting electron trajectories as well as the spin-dependent momentum conservation law. The dependence of the transmission coefficient and spin-polarized currents on the applied voltage is derived as an exact solution to the quantum-mechanical problem for the spin-polarized transport. In the range of the developed physical model, the resonant tunneling, nonresonant tunneling, and enhanced spin filtering can be explained; the simulation results are in good agreement with experimental data.

  10. Quantum tunneling time

    International Nuclear Information System (INIS)

    Wang, Z.S.; Lai, C.H.; Oh, C.H.; Kwek, L.C.

    2004-01-01

    We present a calculation of quantum tunneling time based on the transition duration of wave peak from one side of a barrier to the other. In our formulation, the tunneling time comprises a real and an imaginary part. The real part is an extension of the phase tunneling time with quantum corrections whereas the imaginary time is associated with energy derivatives of the probability amplitudes

  11. Charge Islands Through Tunneling

    Science.gov (United States)

    Robinson, Daryl C.

    2002-01-01

    It has been recently reported that the electrical charge in a semiconductive carbon nanotube is not evenly distributed, but rather it is divided into charge "islands." This paper links the aforementioned phenomenon to tunneling and provides further insight into the higher rate of tunneling processes, which makes tunneling devices attractive. This paper also provides a basis for calculating the charge profile over the length of the tube so that nanoscale devices' conductive properties may be fully exploited.

  12. Josephson tunneling and nanosystems

    OpenAIRE

    Ovchinnikov, Yurii; Kresin, Vladimir

    2010-01-01

    Josephson tunneling between nanoclusters is analyzed. The discrete nature of the electronic energy spectra, including their shell ordering, is explicitly taken into account. The treatment considers the two distinct cases of resonant and non-resonant tunneling. It is demonstrated that the current density greatly exceeds the value discussed in the conventional theory. Nanoparticles are shown to be promising building blocks for nanomaterials-based tunneling networks.

  13. About tunnelling times

    International Nuclear Information System (INIS)

    Olkhovsky, V.S.; Recami, E.

    1991-08-01

    In this paper, first we critically analyse the main theoretical definitions and calculations of the sub-barrier tunnelling and reflection times. Secondly, we propose a new, physically sensible definition of such durations, on the basis of a recent general formalism (already tested for other types of quantum collisions). At last, we discuss some results regarding temporal evolution of the tunnelling processes, and in particular the ''particle'' speed during tunnelling. (author). 36 refs, 1 fig

  14. Microsystem Aeromechanics Wind Tunnel

    Data.gov (United States)

    Federal Laboratory Consortium — The Microsystem Aeromechanics Wind Tunnel advances the study of fundamental flow physics relevant to micro air vehicle (MAV) flight and assesses vehicle performance...

  15. Chiral Tunnelling in Twisted Graphene Bilayer

    OpenAIRE

    He, Wen-Yu; Chu, Zhao-Dong; He, Lin

    2013-01-01

    The perfect transmission in graphene monolayer and the perfect reflection in Bernal graphene bilayer for electrons incident in the normal direction of a potential barrier are viewed as two incarnations of the Klein paradox. Here we show a new and unique incarnation of the Klein paradox. Owing to the different chiralities of the quasiparticles involved, the chiral fermions in twisted graphene bilayer shows adjustable probability of chiral tunnelling for normal incidence: they can be changed fr...

  16. Scanning tunneling microscopy

    International Nuclear Information System (INIS)

    Binnig, G.; Rohrer, H.

    1983-01-01

    Based on vacuum tunneling, a novel type of microscope, the scanning tunneling microscope (STM) was developed. It has an unprecedented resolution in real space on an atomic scale. The authors review the important technical features, illustrate the power of the STM for surface topographies and discuss its potential in other areas of science and technology. (Auth.)

  17. Electron tunneling in chemistry

    International Nuclear Information System (INIS)

    Zamaraev, K.I.; Khajrutdinov, R.F.; Zhdanov, V.P.; Molin, Yu.N.

    1985-01-01

    Results of experimental and theoretical investigations are outlined systematically on electron tunnelling in chemical reactions. Mechanism of electron transport to great distances is shown to be characteristic to chemical compounds of a wide range. The function of tunnel reactions is discussed for various fields of chemistry, including radiation chemistry, electrochemistry, chemistry of solids, chemistry of surface and catalysis

  18. Tunnelling anisotropic magnetoresistance due to antiferromagnetic CoO tunnel barriers

    NARCIS (Netherlands)

    Wang, Kai; Sanderink, Johannes G.M.; Bolhuis, Thijs; van der Wiel, Wilfred Gerard; de Jong, Machiel Pieter

    2015-01-01

    A new approach in spintronics is based on spin-polarized charge transport phenomena governed by antiferromagnetic (AFM) materials. Recent studies have demonstrated the feasibility of this approach for AFM metals and semiconductors. We report tunneling anisotropic magnetoresistance (TAMR) due to the

  19. Tunnel fire dynamics

    CERN Document Server

    Ingason, Haukur; Lönnermark, Anders

    2015-01-01

    This book covers a wide range of issues in fire safety engineering in tunnels, describes the phenomena related to tunnel fire dynamics, presents state-of-the-art research, and gives detailed solutions to these major issues. Examples for calculations are provided. The aim is to significantly improve the understanding of fire safety engineering in tunnels. Chapters on fuel and ventilation control, combustion products, gas temperatures, heat fluxes, smoke stratification, visibility, tenability, design fire curves, heat release, fire suppression and detection, CFD modeling, and scaling techniques all equip readers to create their own fire safety plans for tunnels. This book should be purchased by any engineer or public official with responsibility for tunnels. It would also be of interest to many fire protection engineers as an application of evolving technical principles of fire safety.

  20. Tunneling-Electron-Induced Light Emission from Single Gold Nanoclusters.

    Science.gov (United States)

    Yu, Arthur; Li, Shaowei; Czap, Gregory; Ho, W

    2016-09-14

    The coupling of tunneling electrons with the tip-nanocluster-substrate junction plasmon was investigated by monitoring light emission in a scanning tunneling microscope (STM). Gold atoms were evaporated onto the ∼5 Å thick Al2O3 thin film grown on the NiAl (110) surface where they formed nanoclusters 3-7 nm wide. Scanning tunneling spectroscopy (STS) of these nanoclusters revealed quantum-confined electronic states. Spatially resolved photon imaging showed localized emission hot spots. Size dependent study and light emission from nanocluster dimers further support the viewpoint that coupling of tunneling electrons to the junction plasmon is the main radiative mechanism. These results showed the potential of the STM to reveal the electronic and optical properties of nanoscale metallic systems in the confined geometry of the tunnel junction.

  1. Highly functional tunnelling devices integrated in 3D

    DEFF Research Database (Denmark)

    Wernersson, Lars-Erik; Lind, Erik; Lindström, Peter

    2003-01-01

    a new type of tunnelling transistor, namely a resonant-tunnelling permeable base transistor. A simple model based on a piece-wise linear approximation is used in Cadence to describe the current-voltage characteristics of the transistor. This model is further introduced into a small signal equivalent...... simultaneously on both tunnelling structures and the obtained characteristics are the result of the interplay between the two tunnelling structures and the gate. An equivalent circuit model is developed and we show how this interaction influences the current-voltage characteristics. The gate may be used......We present a new technology for integrating tunnelling devices in three dimensions. These devices are fabricated by the combination of the growth of semiconductor heterostructures with the controlled introduction of metallic elements into an epitaxial layer by an overgrowth technique. First, we use...

  2. Robust spin transfer torque in antiferromagnetic tunnel junctions

    KAUST Repository

    Saidaoui, Hamed Ben Mohamed

    2017-04-18

    We theoretically study the current-induced spin torque in antiferromagnetic tunnel junctions, composed of two semi-infinite antiferromagnetic layers separated by a tunnel barrier, in both clean and disordered regimes. We find that the torque enabling electrical manipulation of the Néel antiferromagnetic order parameter is out of plane, ∼n×p, while the torque competing with the antiferromagnetic exchange is in plane, ∼n×(p×n). Here, p and n are the Néel order parameter direction of the reference and free layers, respectively. Their bias dependence shows behavior similar to that in ferromagnetic tunnel junctions, the in-plane torque being mostly linear in bias, while the out-of-plane torque is quadratic. Most importantly, we find that the spin transfer torque in antiferromagnetic tunnel junctions is much more robust against disorder than that in antiferromagnetic metallic spin valves due to the tunneling nature of spin transport.

  3. Derivation of the tunnelling exchange time for the model of trap-assisted tunnelling

    International Nuclear Information System (INIS)

    Racko, J.; Ballo, P.; Benko, P.; Harmatha, L.; Grmanova, A.; Breza, J.

    2014-01-01

    We present derivation of the tunnelling exchange times that play the key role in the model of trap assisted tunnelling (TAT) considering the electron and hole exchange processes between the trapping centre lying in the forbidden band of the semiconductor and the conduction band, valence band or a metal. All exchange processes are quantitatively described by respective exchange times. The reciprocal values of these exchange times represent the frequency with which the exchange processes contribute to the probability of occupation of the trap by free charge carriers. The crucial problem in any model of TAT is the calculation of the occupation probability. In our approach this probability is expressed in terms of only thermal and tunnelling exchange times. The concept of tunnelling exchange times presents a dominant contribution to our model of TAT. The new approach allows to simply calculate the probability of occupation of the trapping centre by a free charge carrier and subsequently to get the thermal and tunnelling generation-recombination rates occurring in the continuity equations. This is why the TAT model based on thermal and tunnelling exchange times is suitable for simulating the electrical properties of semiconductor nanostructures in which quantum mechanical phenomena play a key role. (authors)

  4. 13C ENDOR Spectroscopy of Lipoxygenase-Substrate Complexes Reveals the Structural Basis for C-H Activation by Tunneling.

    Science.gov (United States)

    Horitani, Masaki; Offenbacher, Adam R; Carr, Cody A Marcus; Yu, Tao; Hoeke, Veronika; Cutsail, George E; Hammes-Schiffer, Sharon; Klinman, Judith P; Hoffman, Brian M

    2017-02-08

    In enzymatic C-H activation by hydrogen tunneling, reduced barrier width is important for efficient hydrogen wave function overlap during catalysis. For native enzymes displaying nonadiabatic tunneling, the dominant reactive hydrogen donor-acceptor distance (DAD) is typically ca. 2.7 Å, considerably shorter than normal van der Waals distances. Without a ground state substrate-bound structure for the prototypical nonadiabatic tunneling system, soybean lipoxygenase (SLO), it has remained unclear whether the requisite close tunneling distance occurs through an unusual ground state active site arrangement or by thermally sampling conformational substates. Herein, we introduce Mn 2+ as a spin-probe surrogate for the SLO Fe ion; X-ray diffraction shows Mn-SLO is structurally faithful to the native enzyme. 13 C ENDOR then reveals the locations of 13 C10 and reactive 13 C11 of linoleic acid relative to the metal; 1 H ENDOR and molecular dynamics simulations of the fully solvated SLO model using ENDOR-derived restraints give additional metrical information. The resulting three-dimensional representation of the SLO active site ground state contains a reactive (a) conformer with hydrogen DAD of ∼3.1 Å, approximately van der Waals contact, plus an inactive (b) conformer with even longer DAD, establishing that stochastic conformational sampling is required to achieve reactive tunneling geometries. Tunneling-impaired SLO variants show increased DADs and variations in substrate positioning and rigidity, confirming previous kinetic and theoretical predictions of such behavior. Overall, this investigation highlights the (i) predictive power of nonadiabatic quantum treatments of proton-coupled electron transfer in SLO and (ii) sensitivity of ENDOR probes to test, detect, and corroborate kinetically predicted trends in active site reactivity and to reveal unexpected features of active site architecture.

  5. Ultrafast scanning tunneling microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Botkin, D.A. [California Univ., Berkeley, CA (United States). Dept. of Physics]|[Lawrence Berkeley Lab., CA (United States)

    1995-09-01

    I have developed an ultrafast scanning tunneling microscope (USTM) based on uniting stroboscopic methods of ultrafast optics and scanned probe microscopy to obtain nanometer spatial resolution and sub-picosecond temporal resolution. USTM increases the achievable time resolution of a STM by more than 6 orders of magnitude; this should enable exploration of mesoscopic and nanometer size systems on time scales corresponding to the period or decay of fundamental excitations. USTM consists of a photoconductive switch with subpicosecond response time in series with the tip of a STM. An optical pulse from a modelocked laser activates the switch to create a gate for the tunneling current, while a second laser pulse on the sample initiates a dynamic process which affects the tunneling current. By sending a large sequence of identical pulse pairs and measuring the average tunnel current as a function of the relative time delay between the pulses in each pair, one can map the time evolution of the surface process. USTM was used to measure the broadband response of the STM`s atomic size tunnel barrier in frequencies from tens to hundreds of GHz. The USTM signal amplitude decays linearly with the tunnel junction conductance, so the spatial resolution of the time-resolved signal is comparable to that of a conventional STM. Geometrical capacitance of the junction does not appear to play an important role in the measurement, but a capacitive effect intimately related to tunneling contributes to the measured signals and may limit the ultimate resolution of the USTM.

  6. Phonon tunneling through a double barrier system

    International Nuclear Information System (INIS)

    Villegas, Diosdado; León-Pérez, Fernando de; Pérez-Álvarez, R.; Arriaga, J.

    2015-01-01

    The tunneling of optical and acoustic phonons at normal incidence on a double-barrier is studied in this paper. Transmission coefficients and resonance conditions are derived theoretically under the assumption that the long-wavelength approximation is valid. It is shown that the behavior of the transmission coefficients for the symmetric double barrier has a Lorentzian form close to resonant frequencies and that Breit–Wigner's formula have a general validity in one-dimensional phonon tunneling. Authors also study the so-called generalized Hartman effect in the tunneling of long-wavelength phonons and show that this effect is a numerical artifact resulting from taking the opaque limit before exploring the variation with a finite barrier width. This study could be useful for the design of acoustic devices

  7. Phonon tunneling through a double barrier system

    Energy Technology Data Exchange (ETDEWEB)

    Villegas, Diosdado [Departamento de Física, Universidad Central “Marta Abreu” de Las Villas, CP 54830, Santa Clara, Villa Clara (Cuba); Instituto de Física, Universidad Autónoma de Puebla, 18 Sur y San Claudio, Edif. 110A, Ciudad Universitaria, 72570 Puebla (Mexico); León-Pérez, Fernando de [Centro Universitario de la Defensa de Zaragoza, Ctra. de Huesca s/n, E-50090 Zaragoza (Spain); Pérez-Álvarez, R. [Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, CP 62209 Cuernavaca (Mexico); Arriaga, J., E-mail: arriaga@ifuap.buap.mx [Instituto de Física, Universidad Autónoma de Puebla, 18 Sur y San Claudio, Edif. 110A, Ciudad Universitaria, 72570 Puebla (Mexico)

    2015-04-15

    The tunneling of optical and acoustic phonons at normal incidence on a double-barrier is studied in this paper. Transmission coefficients and resonance conditions are derived theoretically under the assumption that the long-wavelength approximation is valid. It is shown that the behavior of the transmission coefficients for the symmetric double barrier has a Lorentzian form close to resonant frequencies and that Breit–Wigner's formula have a general validity in one-dimensional phonon tunneling. Authors also study the so-called generalized Hartman effect in the tunneling of long-wavelength phonons and show that this effect is a numerical artifact resulting from taking the opaque limit before exploring the variation with a finite barrier width. This study could be useful for the design of acoustic devices.

  8. Fabrication and characterization of the normally-off N-channel lateral 4H-SiC metal-oxide-semiconductor field-effect transistors

    Science.gov (United States)

    Qing-Wen, Song; Xiao-Yan, Tang; Yan-Jing, He; Guan-Nan, Tang; Yue-Hu, Wang; Yi-Meng, Zhang; Hui, Guo; Ren-Xu, Jia; Hong-Liang, Lv; Yi-Men, Zhang; Yu-Ming, Zhang

    2016-03-01

    In this paper, the normally-off N-channel lateral 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFFETs) have been fabricated and characterized. A sandwich- (nitridation-oxidation-nitridation) type process was used to grow the gate dielectric film to obtain high channel mobility. The interface properties of 4H-SiC/SiO2 were examined by the measurement of HF I-V, G-V, and C-V over a range of frequencies. The ideal C-V curve with little hysteresis and the frequency dispersion were observed. As a result, the interface state density near the conduction band edge of 4H-SiC was reduced to 2 × 1011 eV-1·cm-2, the breakdown field of the grown oxides was about 9.8 MV/cm, the median peak field-effect mobility is about 32.5 cm2·V-1·s-1, and the maximum peak field-effect mobility of 38 cm2·V-1·s-1 was achieved in fabricated lateral 4H-SiC MOSFFETs. Projcet supported by the National Natural Science Foundation of China (Grant Nos. 61404098, 61176070, and 61274079), the Doctoral Fund of Ministry of Education of China (Grant Nos. 20110203110010 and 20130203120017), the National Key Basic Research Program of China (Grant No. 2015CB759600), and the Key Specific Projects of Ministry of Education of China (Grant No. 625010101).

  9. Tunnel magnetoresistance in alumina, magnesia and composite tunnel barrier magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Schebaum, Oliver; Drewello, Volker; Auge, Alexander; Reiss, Guenter; Muenzenberg, Markus; Schuhmann, Henning; Seibt, Michael; Thomas, Andy

    2011-01-01

    Using magnetron sputtering, we have prepared Co-Fe-B/tunnel barrier/Co-Fe-B magnetic tunnel junctions with tunnel barriers consisting of alumina, magnesia, and magnesia-alumina bilayer systems. The highest tunnel magnetoresistance ratios we found were 73% for alumina and 323% for magnesia-based tunnel junctions. Additionally, tunnel junctions with a unified layer stack were prepared for the three different barriers. In these systems, the tunnel magnetoresistance ratios at optimum annealing temperatures were found to be 65% for alumina, 173% for magnesia, and 78% for the composite tunnel barriers. The similar tunnel magnetoresistance ratios of the tunnel junctions containing alumina provide evidence that coherent tunneling is suppressed by the alumina layer in the composite tunnel barrier. - Research highlights: → Transport properties of Co-Fe-B/tunnel barrier/Co-Fe-B magnetic tunnel junctions. → Tunnel barrier consists of MgO, Al-Ox, or MgO/Al-Ox bilayer systems. → Limitation of TMR-ratio in composite barrier tunnel junctions to Al-Ox values. → Limitation indicates that Al-Ox layer is causing incoherent tunneling.

  10. Tunneling current between graphene layers

    OpenAIRE

    Poklonski, Nikolai A.; Siahlo, Andrei I.; Vyrko, Sergey A.; Popov, Andrey M.; Lozovik, Yurii E.

    2013-01-01

    The physical model that allows to calculate the values of the tunneling current be-tween graphene layers is proposed. The tunneling current according to the pro-posed model is proportional to the area of tunneling transition. The calculated value of tunneling conductivity is in qualitative agreement with experimental data.

  11. Properties of a tunnel point contact between aluminum and the superconducting amorphous alloy NiZr2

    International Nuclear Information System (INIS)

    Gantmakher, V.F.; Golubov, A.A.; Osherov, M.V.

    1989-01-01

    The I-V characteristics of a tunnel point contact between aluminum and an amorphous ribbon resembling NiZr 2 in composition differ qualitatively from those of ordinary tunnel junctions between a superconductor and a normal metal. It is demonstrated that the observed curve shapes cannot be explained by accounting solely for one-particle tunneling in conditions of the proximity effect. This is followed by a qualitative discussion of a model in which the current rise at the potential eV equal to the gap width Δ (T) is generated by two-particle electron tunneling through the intermediate state which is manifested as a Cooper pair on the Fermi-level in the thin superconducting layer produced in the aluminum by the proximity effect. The current flowing through the contact will cause a breakdown of superconductivity in the vicinity of the contact at voltages exceeding the gap width. Smallness of the junction plays a decisive role both in inducing superconductivity for eV Δ

  12. Vacuum phonon tunneling.

    Science.gov (United States)

    Altfeder, Igor; Voevodin, Andrey A; Roy, Ajit K

    2010-10-15

    Field-induced phonon tunneling, a previously unknown mechanism of interfacial thermal transport, has been revealed by ultrahigh vacuum inelastic scanning tunneling microscopy (STM). Using thermally broadened Fermi-Dirac distribution in the STM tip as in situ atomic-scale thermometer we found that thermal vibrations of the last tip atom are effectively transmitted to sample surface despite few angstroms wide vacuum gap. We show that phonon tunneling is driven by interfacial electric field and thermally vibrating image charges, and its rate is enhanced by surface electron-phonon interaction.

  13. Tunneling spectroscopy on semiconductors with a low surface state density

    OpenAIRE

    Sommerhalter, Christof; Matthes, Thomas W.; Boneberg, Johannes; Leiderer, Paul; Lux-Steiner, Martha Christina

    1997-01-01

    A detailed study of tunneling spectroscopy concerning semiconductors with a low surface state density is presented. For this purpose, I V curves under dark conditions and under illumination were measured on the (0001) van der Waals surface of a p-type WS2 single crystal, which is known to be free of intrinsic surface states. The measurements are interpreted by an analytical one-dimensional metal-insulator-semiconductor model, which shows that the presence of the finite tunneling current has ...

  14. Complex use of heat-exchange tunnels

    Directory of Open Access Journals (Sweden)

    А. Ф. Галкин

    2017-04-01

    Full Text Available The paper presents separate results of complex research (experimental and theoretical on the application of heat-exchange tunnels – in frozen rocks, among other things – as underground constructions serving two purposes. It is proposed to use heat-exchange tunnels as a separate multi-functional module, which under normal conditions will be used to set standards of heat regime parameters in the mines, and in emergency situations, natural or man-made, will serve as a protective structure to shelter mine workers. Heat-exchange modules can be made from mined-out or specially constructed tunnels. Economic analysis shows that the use of such multi-functional modules does not increase operation and maintenance costs, but enhances safety of mining operations and reliability in case of emergency situations. There are numerous theoretic and experimental investigations in the field of complex use of mining tunnels, which allows to develop regulatory design documents on their basis. Experience of practical application of heat-exchange tunnels has been assessed from the position of regulating heat regime in the mines.

  15. Chaos-assisted tunneling in the presence of Anderson localization.

    Science.gov (United States)

    Doggen, Elmer V H; Georgeot, Bertrand; Lemarié, Gabriel

    2017-10-01

    Tunneling between two classically disconnected regular regions can be strongly affected by the presence of a chaotic sea in between. This phenomenon, known as chaos-assisted tunneling, gives rise to large fluctuations of the tunneling rate. Here we study chaos-assisted tunneling in the presence of Anderson localization effects in the chaotic sea. Our results show that the standard tunneling rate distribution is strongly modified by localization, going from the Cauchy distribution in the ergodic regime to a log-normal distribution in the strongly localized case, for both a deterministic and a disordered model. We develop a single-parameter scaling description which accurately describes the numerical data. Several possible experimental implementations using cold atoms, photonic lattices, or microwave billiards are discussed.

  16. Quantum tunneling with friction

    Science.gov (United States)

    Tokieda, M.; Hagino, K.

    2017-05-01

    Using the phenomenological quantum friction models introduced by P. Caldirola [Nuovo Cimento 18, 393 (1941), 10.1007/BF02960144] and E. Kanai [Prog. Theor. Phys. 3, 440 (1948), 10.1143/ptp/3.4.440], M. D. Kostin [J. Chem. Phys. 57, 3589 (1972), 10.1063/1.1678812], and K. Albrecht [Phys. Lett. B 56, 127 (1975), 10.1016/0370-2693(75)90283-X], we study quantum tunneling of a one-dimensional potential in the presence of energy dissipation. To this end, we calculate the tunneling probability using a time-dependent wave-packet method. The friction reduces the tunneling probability. We show that the three models provide similar penetrabilities to each other, among which the Caldirola-Kanai model requires the least numerical effort. We also discuss the effect of energy dissipation on quantum tunneling in terms of barrier distributions.

  17. Wind Tunnel Testing Facilities

    Data.gov (United States)

    Federal Laboratory Consortium — NASA Ames Research Center is pleased to offer the services of our premier wind tunnel facilities that have a broad range of proven testing capabilities to customers...

  18. INCAS TRISONIC WIND TUNNEL

    Directory of Open Access Journals (Sweden)

    Florin MUNTEANU

    2009-09-01

    Full Text Available The 1.2 m x 1.2 m Trisonic Blowdown Wind Tunnel is the largest of the experimental facilities at the National Institute for Aerospace Research - I.N.C.A.S. "Elie Carafoli", Bucharest, Romania. The tunnel has been designed by the Canadian company DSMA (now AIOLOS and since its commissioning in 1978 has performed high speed aerodynamic tests for more than 120 projects of aircraft, missiles and other objects among which the twin jet fighter IAR-93, the jet trainer IAR-99, the MIG-21 Lancer, the Polish jet fighter YRYDA and others. In the last years the wind tunnel has been used mostly for experimental research in European projects such as UFAST. The high flow quality parameters and the wide range of testing capabilities ensure the competitivity of the tunnel at an international level.

  19. The ISI Tunnel

    Science.gov (United States)

    1993-10-01

    DP /etc/tunnelvisa p zephyr dark -star TCP /etc/tunnelvisa p zephyr dak’star ICMP /etc/tunnelvisa p zephyr quark MDP /etc/tunnelvisa p zephyr quark ...drax-net-yp 128.9.32.2 1 route add quark -net-yp 128.9.32.3 1 route add vlsi-net-yp 128.9.32.4 1 route add darkstar-net-yp 128.9.32.3 1 route add rocky...TCP /etc/tunnel-visa p zephyr quark ICMP /etc/tunnel-visa p zephyr drax tTI)P /etc/tunnel-visa p zephyr drax TCP /etc/tunnel_visa p zephyr drax ICMP

  20. Wind Tunnel Facility

    Data.gov (United States)

    Federal Laboratory Consortium — This ARDEC facility consists of subsonic, transonic, and supersonic wind tunnels to acquire aerodynamic data. Full-scale and sub-scale models of munitions are fitted...

  1. Water Tunnel Facility

    Data.gov (United States)

    Federal Laboratory Consortium — NETL’s High-Pressure Water Tunnel Facility in Pittsburgh, PA, re-creates the conditions found 3,000 meters beneath the ocean’s surface, allowing scientists to study...

  2. Calibration of tip and sample temperature of a scanning tunneling microscope using a superconductive sample

    Energy Technology Data Exchange (ETDEWEB)

    Stocker, Matthias; Pfeifer, Holger; Koslowski, Berndt, E-mail: berndt.koslowski@uni-ulm.de [Institute of Solid State Physics, University of Ulm, D-89069 Ulm (Germany)

    2014-05-15

    The temperature of the electrodes is a crucial parameter in virtually all tunneling experiments. The temperature not only controls the thermodynamic state of the electrodes but also causes thermal broadening, which limits the energy resolution. Unfortunately, the construction of many scanning tunneling microscopes inherits a weak thermal link between tip and sample in order to make one side movable. Such, the temperature of that electrode is badly defined. Here, the authors present a procedure to calibrate the tip temperature by very simple means. The authors use a superconducting sample (Nb) and a standard tip made from W. Due to the asymmetry in the density of states of the superconductor (SC)—normal metal (NM) tunneling junction, the SC temperature controls predominantly the density of states while the NM controls the thermal smearing. By numerically simulating the I-V curves and numerically optimizing the tip temperature and the SC gap width, the tip temperature can be accurately deduced if the sample temperature is known or measureable. In our case, the temperature dependence of the SC gap may serve as a temperature sensor, leading to an accurate NM temperature even if the SC temperature is unknown.

  3. Calibration of tip and sample temperature of a scanning tunneling microscope using a superconductive sample

    International Nuclear Information System (INIS)

    Stocker, Matthias; Pfeifer, Holger; Koslowski, Berndt

    2014-01-01

    The temperature of the electrodes is a crucial parameter in virtually all tunneling experiments. The temperature not only controls the thermodynamic state of the electrodes but also causes thermal broadening, which limits the energy resolution. Unfortunately, the construction of many scanning tunneling microscopes inherits a weak thermal link between tip and sample in order to make one side movable. Such, the temperature of that electrode is badly defined. Here, the authors present a procedure to calibrate the tip temperature by very simple means. The authors use a superconducting sample (Nb) and a standard tip made from W. Due to the asymmetry in the density of states of the superconductor (SC)—normal metal (NM) tunneling junction, the SC temperature controls predominantly the density of states while the NM controls the thermal smearing. By numerically simulating the I-V curves and numerically optimizing the tip temperature and the SC gap width, the tip temperature can be accurately deduced if the sample temperature is known or measureable. In our case, the temperature dependence of the SC gap may serve as a temperature sensor, leading to an accurate NM temperature even if the SC temperature is unknown

  4. The Beginner's Guide to Wind Tunnels with TunnelSim and TunnelSys

    Science.gov (United States)

    Benson, Thomas J.; Galica, Carol A.; Vila, Anthony J.

    2010-01-01

    The Beginner's Guide to Wind Tunnels is a Web-based, on-line textbook that explains and demonstrates the history, physics, and mathematics involved with wind tunnels and wind tunnel testing. The Web site contains several interactive computer programs to demonstrate scientific principles. TunnelSim is an interactive, educational computer program that demonstrates basic wind tunnel design and operation. TunnelSim is a Java (Sun Microsystems Inc.) applet that solves the continuity and Bernoulli equations to determine the velocity and pressure throughout a tunnel design. TunnelSys is a group of Java applications that mimic wind tunnel testing techniques. Using TunnelSys, a team of students designs, tests, and post-processes the data for a virtual, low speed, and aircraft wing.

  5. Tunnelling of a molecule

    International Nuclear Information System (INIS)

    Jarvis, P.D.; Bulte, D.P.

    1998-01-01

    A quantum-mechanical description of tunnelling is presented for a one-dimensional system with internal oscillator degrees of freedom. The 'charged diatomic molecule' is frustrated on encountering a barrier potential by its centre of charge not being coincident with its centre of mass, resulting in transitions amongst internal states. In an adiabatic limit, the tunnelling of semiclassical coherent-like oscillator states is shown to exhibit the Hartman and Bueuttiker-Landauer times t H and t BL , with the time dependence of the coherent state parameter for the tunnelled state given by α(t) = α e -iω(t+Δt) , Δt = t H - it BL . A perturbation formalism is developed, whereby the exact transfer matrix can be expanded to any desired accuracy in a suitable limit. An 'intrinsic' time, based on the oscillator transition rate during tunnelling, transmission or reflection, is introduced. In simple situations the resulting intrinsic tunnelling time is shown to vanish to lowest order. In the general case a particular (nonzero) parametrisation is inferred, and its properties discussed in comparison with the literature on tunnelling times for both wavepackets and internal clocks. Copyright (1998) CSIRO Australia

  6. Subgap resonant quasiparticle transport in normal-superconductor quantum dot devices

    Energy Technology Data Exchange (ETDEWEB)

    Gramich, J., E-mail: joerg.gramich@unibas.ch; Baumgartner, A.; Schönenberger, C. [Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel (Switzerland)

    2016-04-25

    We report thermally activated transport resonances for biases below the superconducting energy gap in a carbon nanotube quantum dot (QD) device with a superconducting Pb and a normal metal contact. These resonances are due to the superconductor's finite quasi-particle population at elevated temperatures and can only be observed when the QD life-time broadening is considerably smaller than the gap. This condition is fulfilled in our QD devices with optimized Pd/Pb/In multi-layer contacts, which result in reproducibly large and “clean” superconducting transport gaps with a strong conductance suppression for subgap biases. We show that these gaps close monotonically with increasing magnetic field and temperature. The accurate description of the subgap resonances by a simple resonant tunneling model illustrates the ideal characteristics of the reported Pb contacts and gives an alternative access to the tunnel coupling strengths in a QD.

  7. Tunneling in cuprate and bismuthate superconductors

    International Nuclear Information System (INIS)

    Zasadzinski, J.F.; Huang, Qiang; Tralshawala, N.

    1991-10-01

    Tunneling measurements using a point-contact technique are reported for the following high temperature superconducting oxides: Ba 1-x K x BiO 3 (BKBO), Nd 2-x Ce x CuO 4 (NCCO), Bi 2 Sr 2 CaCu 2 O 7 (BSCCO) and Tl 2 Ba 2 CaCu 2 O x (TBCCO). For the bismuthate, BKBO, ideal, S-I-N tunneling characteristics are observed using a Au tip. The normalized conductance is fitted to a BCS density of states and thermal smearing only proving there is no fundamental limitation in BKBO for device applications. For the cuprates, the normalized conductance displays BCS-like characteristics, but with a broadening larger than from thermal smearing. Energy gap values are presented for each material. For BKBO and NCCO the Eliashberg functions, α 2 F(ω), obtained from the tunneling are shown to be in good agreement with neutron scattering results. Proximity effect tunneling studies are reported for Au/BSCCO bilayers and show that the energy gap of BSCCO can be observed through Au layers up to 600 Angstrom thick

  8. Elastic properties of superconducting bulk metallic glasses; Elastische Eigenschaften von supraleitenden massiven metallischen Glaesern

    Energy Technology Data Exchange (ETDEWEB)

    Hempel, Marius

    2015-07-01

    Within the framework of this thesis the elastic properties of a superconducting bulk metallic glass between 10 mK and 300 K were first investigated. In order to measure the entire temperature range, in particular the low temperature part, new experimental techniques were developed. Using an inductive readout scheme for a double paddle oscillator it was possible to determine the internal friction and the relative change of sound velocity of bulk metallic glasses with high precision. This allowed for a detailed comparison of the data with different models. The analysis focuses on the low temperature regime where the properties of glassy materials are governed by atomic tunneling systems as described by the tunneling model. The influence of conduction electrons in the normal conducting state and quasiparticles in the superconducting state of the glass were accounted for in the theoretical description, resulting in a good agreement over a large temperature range between measured data and prediction of the tunneling model. This allowed for a direct determination of the coupling constant between electrons and tunneling systems. In the vicinity of the transition temperature Tc the data can only be described if a modified distribution function of the tunneling parameters is applied.

  9. Molecular Structures, Vibrational Spectroscopy, and Normal-Mode Analysis of M(2)(C&tbd1;CR)(4)(PMe(3))(4) Dimetallatetraynes. Observation of Strongly Mixed Metal-Metal and Metal-Ligand Vibrational Modes.

    Science.gov (United States)

    John, Kevin D.; Miskowski, Vincent M.; Vance, Michael A.; Dallinger, Richard F.; Wang, Louis C.; Geib, Steven J.; Hopkins, Michael D.

    1998-12-28

    The nature of the skeletal vibrational modes of complexes of the type M(2)(C&tbd1;CR)(4)(PMe(3))(4) (M = Mo, W; R = H, Me, Bu(t)(), SiMe(3)) has been deduced. Metrical data from X-ray crystallographic studies of Mo(2)(C&tbd1;CR)(4)(PMe(3))(4) (R = Me, Bu(t)(), SiMe(3)) and W(2)(C&tbd1;CMe)(4)(PMe(3))(4) reveal that the core bond distances and angles are within normal ranges and do not differ in a statistically significant way as a function of the alkynyl substituent, indicating that their associated force constants should be similarly invariant among these compounds. The crystal structures of Mo(2)(C&tbd1;CSiMe(3))(4)(PMe(3))(4) and Mo(2)(C&tbd1;CBu(t)())(4)(PMe(3))(4) are complicated by 3-fold disorder of the Mo(2) unit within apparently ordered ligand arrays. Resonance-Raman spectra ((1)(delta-->delta) excitation, THF solution) of Mo(2)(C&tbd1;CSiMe(3))(4)(PMe(3))(4) and its isotopomers (PMe(3)-d(9), C&tbd1;CSiMe(3)-d(9), (13)C&tbd1;(13)CSiMe(3)) exhibit resonance-enhanced bands due to a(1)-symmetry fundamentals (nu(a) = 362, nu(b) = 397, nu(c) = 254 cm(-)(1) for the natural-abundance complex) and their overtones and combinations. The frequencies and relative intensities of the fundamentals are highly sensitive to isotopic substitution of the C&tbd1;CSiMe(3) ligands, but are insensitive to deuteration of the PMe(3) ligands. Nonresonance-Raman spectra (FT-Raman, 1064 nm excitation, crystalline samples) for the Mo(2)(C&tbd1;CSiMe(3))(4)(PMe(3))(4) compounds and for Mo(2)(C&tbd1;CR)(4)(PMe(3))(4) (R = H, D, Me, Bu(t)(), SiMe(3)) and W(2)(C&tbd1;CMe)(4)(PMe(3))(4) exhibit nu(a), nu(b), and nu(c) and numerous bands due to alkynyl- and phosphine-localized modes, the latter of which are assigned by comparisons to FT-Raman spectra of Mo(2)X(4)L(4) (X = Cl, Br, I; L = PMe(3), PMe(3)-d(9))(4) and Mo(2)Cl(4)(AsMe(3))(4). Valence force-field normal-coordinate calculations on the model compound Mo(2)(C&tbd1;CH)(4)P(4), using core force constants transferred from a calculation

  10. Extended Majorana zero modes in a topological superconducting-normal T-junction

    Science.gov (United States)

    Spånslätt, Christian; Ardonne, Eddy

    2017-03-01

    We investigate the sub gap properties of a three terminal Josephson T-junction composed of topologically superconducting wires connected by a normal metal region. This system naturally hosts zero energy Andreev bound states which are of self-conjugate Majorana nature and we show that they are, in contrast to ordinary Majorana zero modes, spatially extended in the normal metal region. If the T-junction respects time-reversal symmetry, we show that a zero mode is distributed only in two out of three arms in the junction and tuning the superconducting phases allows for transfer of the mode between the junction arms. We further provide tunneling conductance calculations showing that these features can be detected in experiments. Our findings suggest an experimental platform for studying the nature of spatially extended Majorana zero modes.

  11. Tunneling time and Hartman effect in a ferromagnetic graphene superlattice

    Directory of Open Access Journals (Sweden)

    Farhad Sattari

    2012-03-01

    Full Text Available Using transfer-matrix and stationary phase methods, we study the tunneling time (group delay time in a ferromagnetic monolayer graphene superlattice. The system we peruse consists of a sequence of rectangular barriers and wells, which can be realized by putting a series of electronic gates on the top of ferromagnetic graphene. The magnetization in the two ferromagnetic layers is aligned parallel. We find out that the tunneling time for normal incident is independent of spin state of electron as well as the barrier height and electron Fermi energy while for the oblique incident angles the tunneling time depends on the spin state of electron and has an oscillatory behavior. Also the effect of barrier width on tunneling time is also investigated and shown that, for normal incident, the Hartman effect disappears in a ferromagnetic graphene superlattice but it appears for oblique incident angles when the x component of the electron wave vector in the barrier is imaginary.

  12. Conductance of graphene based normal-superconductor junction with double magnetic barriers

    Science.gov (United States)

    Abdollahipour, B.; Mohebalipour, A.; Maleki, M. A.

    2018-05-01

    We study conductance of a graphene based normal metal-superconductor junction with two magnetic barriers. The magnetic barriers are induced via two applied magnetic fields with the same magnitudes and opposite directions accompanied by an applied electrostatic potential. We solve Dirac-Bogoliubov-De-Gennes (DBdG) equation to calculate conductance of the junction. We find that applying the magnetic field leads to suppression of the Andreev reflection and conductance for all energies. On the other hand, we observe a crossover from oscillatory to tunneling behavior of the conductance as a function of the applied potential by increasing the magnetic field.

  13. Franck-Condon fingerprinting of vibration-tunneling spectra.

    Science.gov (United States)

    Berrios, Eduardo; Sundaradevan, Praveen; Gruebele, Martin

    2013-08-15

    We introduce Franck-Condon fingerprinting as a method for assigning complex vibration-tunneling spectra. The B̃ state of thiophosgene (SCCl2) serves as our prototype. Despite several attempts, assignment of its excitation spectrum has proved difficult because of near-degenerate vibrational frequencies, Fermi resonance between the C-Cl stretching mode and the Cl-C-Cl bending mode, and large tunneling splittings due to the out-of-plane umbrella mode. Hence, the spectrum has never been fitted to an effective Hamiltonian. Our assignment approach replaces precise frequency information with intensity information, eliminating the need for double resonance spectroscopy or combination differences, neither of which have yielded a full assignment thus far. The dispersed fluorescence spectrum of each unknown vibration-tunneling state images its character onto known vibrational progressions in the ground state. By using this Franck-Condon fingerprint, we were able to determine the predominant character of several vibration-tunneling states and assign them; in other cases, the fingerprinting revealed that the states are strongly mixed and cannot be characterized with a simple normal mode assignment. The assigned transitions from vibration-tunneling wave functions that were not too strongly mixed could be fitted within measurement uncertainty by an effective vibration-tunneling Hamiltonian. A fit of all observed vibration-tunneling states will require a full resonance-tunneling Hamiltonian.

  14. Tunnel injection and tunnel stimulation of superconductivity: the role of branch imbalance

    International Nuclear Information System (INIS)

    Gal'perin, Y.M.; Kozub, V.I.; Spivak, B.A.

    1983-01-01

    The tunnel injection and the tunnel extraction of quasiparticles in a superconductor are considered, taking into account the branch population imbalance. The stability of nonequilibrium states with branch imbalance is discussed. It is shown that if this imbalance is large enough, the nonequilibrim state becomes unstable with respect to spatially homogeneous fluctuations of the order parameter, the characteristic increment being of the order of that for the Cooper instability of the normal state at T>T/sub c/. As a result, states with oscillating order parameter can exist in a superconductor under injection or extraction. The relation of the results obtained to experimental results is discussed

  15. Effects of the finite duration of quantum tunneling in laser-assisted scanning tunneling microscopy

    International Nuclear Information System (INIS)

    Hagmann, M.J.

    1994-01-01

    Previous measurements of tunnel conductance in heterostructures and experiments with Josephson junctions suggest quantum tunneling has a definite duration. The authors use semiclassical methods to determine the effects of this delay on the tunneling current in a laser-assisted STM. A planar-planar STM model is used with the exact multiple image potential, and the energy distribution for a free-electron metal. It is necessary to average over the phase at barrier entry, and iteration with back propagated solutions is required to obtain the transmission coefficients for evenly spaced phases and specified energies at barrier entry. The simulations suggest that the dependence of the tunneling current on the wavelength of illumination can serve as a basis for determining the duration of barrier traversal. A power flux density of 10 11 W/m 2 would be required at several wavelengths from 1 to 10 μm. It is possible that thermal effects could be separated from the modeled phenomena by determining the time dependence of the tunneling current with a pulsed laser

  16. Tunneling magnetoresistance and electroresistance in Fe/PbTiO3/Fe multiferroic tunnel junctions

    International Nuclear Information System (INIS)

    Dai, Jian-Qing

    2016-01-01

    We perform first-principles electronic structure and spin-dependent transport calculations for a Fe/PbTiO 3 /Fe multiferroic tunnel junction with asymmetric TiO 2 - and PbO-terminated interfaces. We demonstrate that the interfacial electronic reconstruction driven by the in situ screening of ferroelectric polarization, in conjunction with the intricate complex band structure of barrier, play a decisive role in controlling the spin-dependent tunneling. Reversal of ferroelectric polarization results in a transition from insulating to half-metal-like conducting state for the interfacial Pb 6p z orbitals, which acts as an atomic-scale spin-valve by releasing the tunneling current in antiparallel magnetization configuration as the ferroelectric polarization pointing to the PbO-terminated interface. This effect produces large change in tunneling conductance. Our results open an attractive avenue in designing multiferroic tunnel junctions with excellent performance by exploiting the interfacial electronic reconstruction originated from the in situ screening of ferroelectric polarization.

  17. Tunneling magnetoresistance and electroresistance in Fe/PbTiO{sub 3}/Fe multiferroic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Dai, Jian-Qing, E-mail: djqkust@sina.com [School of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093 (China)

    2016-08-21

    We perform first-principles electronic structure and spin-dependent transport calculations for a Fe/PbTiO{sub 3}/Fe multiferroic tunnel junction with asymmetric TiO{sub 2}- and PbO-terminated interfaces. We demonstrate that the interfacial electronic reconstruction driven by the in situ screening of ferroelectric polarization, in conjunction with the intricate complex band structure of barrier, play a decisive role in controlling the spin-dependent tunneling. Reversal of ferroelectric polarization results in a transition from insulating to half-metal-like conducting state for the interfacial Pb 6p{sub z} orbitals, which acts as an atomic-scale spin-valve by releasing the tunneling current in antiparallel magnetization configuration as the ferroelectric polarization pointing to the PbO-terminated interface. This effect produces large change in tunneling conductance. Our results open an attractive avenue in designing multiferroic tunnel junctions with excellent performance by exploiting the interfacial electronic reconstruction originated from the in situ screening of ferroelectric polarization.

  18. Sting Dynamics of Wind Tunnel Models

    Science.gov (United States)

    1976-05-01

    Patterson AFB, AFFDL, Ohio, October 1964. 17. Brunk, James E. "Users Manual: Extended Capability Magnus Rotor and Ballistic Body 6-DOF Trajectory...measure "second-order" aerodynamic effects resulting, for example, from Reynolds number in- fluence. Consequently, all wind tunnel data systems are...sting-model interference effects , sting configurations normally consist of one or more linearly tapered sections combined with one or more untapered

  19. Interaction between groundwater and TBM (Tunnel Boring Machine) excavated tunnels

    OpenAIRE

    Font Capó, Jordi

    2012-01-01

    A number of problems, e.g. sudden inflows are encountered during tunneling under the piezometric level, especially when the excavation crosses high transmissivity areas. These inflows may drag materials when the tunnel crosses low competent layers, resulting in subsidence, chimney formation and collapses. Moreover, inflows can lead to a decrease in head level because of aquifer drainage. Tunnels can be drilled by a tunnel boring machine (TBM) to minimize inflows and groundwater impacts, restr...

  20. Inter-grain tunnelling in the half-metallic double-perovskites Sr2BB'O6 (BB'= FeMo, FeRe, CrMo, CrW, CrRe

    Directory of Open Access Journals (Sweden)

    Fisher B.

    2014-07-01

    Full Text Available The zero-field conductivities (σ of polycrystalline title materials, are governed by intergrain transport. In the majority of cases their σ(T can be described by the "fluctuation induced tunnelling" model. Analysis of the results in terms of this model reveals two remarkable features: 1. For all Sr2FeMoO6 samples of various microstructures, the tunnelling constant (barrier width × inverse decay-length of the wave-function is ~ 2, indicating the existence of an intrinsic insulating boundary layer with a well-defined electronic (and magnetic structure. 2. The tunnelling constant for all cold-pressed samples decreases linearly with increasing magnetic-moment/formula-unit.

  1. Seepage into PEP tunnel

    International Nuclear Information System (INIS)

    Weidner, H.

    1990-01-01

    The current rate of seepage into the PEP tunnel in the vicinity of IR-10 is very low compared to previous years. Adequate means of handling this low flow are in place. It is not clear whether the reduction in the flow is temporary, perhaps due to three consecutive dry years, or permanent due to drainage of a perched water table. During PEP construction a large amount of effort was expended in attempts to seal the tunnel, with no immediate effect. The efforts to ''manage'' the water flow are deemed to be successful. By covering equipment to protect it from dripping water and channeling seepage into the drainage gutters, the seepage has been reduced to a tolerable nuisance. There is no sure, safe procedure for sealing a leaky shotcreted tunnel

  2. Uncooled tunneling infrared sensor

    Science.gov (United States)

    Kenny, Thomas W. (Inventor); Kaiser, William J. (Inventor); Podosek, Judith A. (Inventor); Vote, Erika C. (Inventor); Muller, Richard E. (Inventor); Maker, Paul D. (Inventor)

    1995-01-01

    An uncooled infrared tunneling sensor in which the only moving part is a diaphragm which is deflected into contact with a micromachined silicon tip electrode prepared by a novel lithographic process. Similarly prepared deflection electrodes employ electrostatic force to control the deflection of a silicon nitride, flat diaphragm membrane. The diaphragm exhibits a high resonant frequency which reduces the sensor's sensitivity to vibration. A high bandwidth feedback circuit controls the tunneling current by adjusting the deflection voltage to maintain a constant deflection of the membrane. The resulting infrared sensor can be miniaturized to pixel dimensions smaller than 100 .mu.m. An alternative embodiment is implemented using a corrugated membrane to permit large deflection without complicated clamping and high deflection voltages. The alternative embodiment also employs a pinhole aperture in a membrane to accommodate environmental temperature variation and a sealed chamber to eliminate environmental contamination of the tunneling electrodes and undesireable accoustic coupling to the sensor.

  3. Tunneling current into the vortex lattice states of s-and p- wave superconductors

    International Nuclear Information System (INIS)

    Kowalewski, L.; Nogala, M.M.; Thomas, M.; Wojciechowski, R.J.

    2000-01-01

    The tunneling current between the metallic tip of a scanning microscope and s- and p-wave superconductors in quantizing magnetic field is investigated. The differential conductance is calculated both as a function of bias voltage at the centre of the vortex line and for varying position of the scanning tunneling microscope tip at a stable voltage. (author)

  4. Spectroscopy of surface adsorbed molecules (scanning tunneling microscopy). Progress report, May 1, 1985-April 30, 1986

    International Nuclear Information System (INIS)

    Coleman, R.V.

    1986-01-01

    A review of the scanning tunneling microscopy program is given. This article contains a description of the design and fabrication of the microscope in addition to description of studies which use the microscope: studies of charge-density waves and studies of tunnel junctions doped with metals and semiconductors. 48 refs., 26 figs

  5. Magnetic-Field Dependence of Tunnel Couplings in Carbon Nanotube Quantum Dots

    DEFF Research Database (Denmark)

    Grove-Rasmussen, Kasper; Grap, S.; Paaske, Jens

    2012-01-01

    By means of sequential and cotunneling spectroscopy, we study the tunnel couplings between metallic leads and individual levels in a carbon nanotube quantum dot. The levels are ordered in shells consisting of two doublets with strong- and weak-tunnel couplings, leading to gate-dependent level...

  6. Instabilities in thin tunnel junctions

    International Nuclear Information System (INIS)

    Konkin, M.K.; Adler, J.G.

    1978-01-01

    Tunnel junctions prepared for inelastic electron tunneling spectroscopy are often plagued by instabilities in the 0-500-meV range. This paper relates the bias at which the instability occurs to the barrier thickness

  7. Clarifying Normalization

    Science.gov (United States)

    Carpenter, Donald A.

    2008-01-01

    Confusion exists among database textbooks as to the goal of normalization as well as to which normal form a designer should aspire. This article discusses such discrepancies with the intention of simplifying normalization for both teacher and student. This author's industry and classroom experiences indicate such simplification yields quicker…

  8. First principles studies of electron tunneling in proteins

    Science.gov (United States)

    Hayashi, Tomoyuki; Stuchebrukhov, Alexei A.

    2014-01-01

    A first principles study of electronic tunneling along the chain of seven Fe/S clusters in respiratory complex I, a key enzyme in the respiratory electron transport chain, is described. The broken-symmetry states of the Fe/S metal clusters calculated at both DFT and semi-empirical ZINDO levels were utilized to examine both the extremely weak electronic couplings between Fe/S clusters and the tunneling pathways, which provide a detailed atomistic-level description of the charge transfer process in the protein. One-electron tunneling approximation was found to hold within a reasonable accuracy, with only a moderate induced polarization of the core electrons. The method is demonstrated to be able to calculate accurately the coupling matrix elements as small as 10−4 cm−1. A distinct signature of the wave properties of electrons is observed as quantum interferences of multiple tunneling pathways. PMID:25383312

  9. Tunneling in axion monodromy

    Energy Technology Data Exchange (ETDEWEB)

    Brown, Jon; Cottrell, William; Shiu, Gary; Soler, Pablo [Department of Physics, University of Wisconsin,Madison, WI 53706 (United States)

    2016-10-06

    The Coleman formula for vacuum decay and bubble nucleation has been used to estimate the tunneling rate in models of axion monodromy in recent literature. However, several of Coleman’s original assumptions do not hold for such models. Here we derive a new estimate with this in mind using a similar Euclidean procedure. We find that there are significant regions of parameter space for which the tunneling rate in axion monodromy is not well approximated by the Coleman formula. However, there is also a regime relevant to large field inflation in which both estimates parametrically agree. We also briefly comment on the applications of our results to the relaxion scenario.

  10. LEP tunnel monorail

    CERN Multimedia

    1985-01-01

    A monorail from CERN's Large Electron Positron collider (LEP, for short). It ran around the 27km tunnel, transporting equipment and personnel. With its 27-kilometre circumference, LEP was the largest electron-positron accelerator ever built and ran from 1989 to 2000. During 11 years of research, LEP's experiments provided a detailed study of the electroweak interaction. Measurements performed at LEP also proved that there are three – and only three – generations of particles of matter. LEP was closed down on 2 November 2000 to make way for the construction of the Large Hadron Collider in the same tunnel.

  11. Excavating a transfer tunnel

    CERN Multimedia

    Laurent Guiraud

    2000-01-01

    The transfer tunnel being dug here will take the 450 GeV beam from the SPS and inject it into the LHC where the beam energies will be increased to 7 TeV. In order to transfer this beam from the SPS to the LHC, two transfer tunnels are used to circulate the beams in opposite directions. When excavated, the accelerator components, including magnets, beam pipes and cryogenics will be installed and connected to both the SPS and LHC ready for operation to begin in 2008.

  12. Gap anisotropy and tunneling currents. [MPS3

    DEFF Research Database (Denmark)

    Lazarides, N.; Sørensen, Mads Peter

    1996-01-01

    The tunneling Hamiltonian formalism is applied to calculate the tunnelingcurrents through a small superconducting tunnel junction. The formalism isextended to nonconstant tunneling matrix elements. The electrodes of thejunction are assumed to......The tunneling Hamiltonian formalism is applied to calculate the tunnelingcurrents through a small superconducting tunnel junction. The formalism isextended to nonconstant tunneling matrix elements. The electrodes of thejunction are assumed to...

  13. Breaking through the tranfer tunnel

    CERN Document Server

    Laurent Guiraud

    2001-01-01

    This image shows the tunnel boring machine breaking through the transfer tunnel into the LHC tunnel. Proton beams will be transferred from the SPS pre-accelerator to the LHC at 450 GeV through two specially constructed transfer tunnels. From left to right: LHC Project Director, Lyn Evans; CERN Director-General (at the time), Luciano Maiani, and Director for Accelerators, Kurt Hubner.

  14. Control of tunneling in heterostructures

    International Nuclear Information System (INIS)

    Volokhov, V M; Tovstun, C A; Ivlev, B

    2007-01-01

    A tunneling current between two rectangular potential wells can be effectively controlled by applying an external ac field. A variation of the ac frequency by 10% may lead to the suppression of the tunneling current by two orders of magnitude, which is a result of quantum interference under the action of the ac field. This effect of destruction of tunneling can be used as a sensitive control of tunneling current across nanosize heterostructures

  15. Ivar Giaever, Tunneling, and Superconductors

    Science.gov (United States)

    dropdown arrow Site Map A-Z Index Menu Synopsis Ivar Giaever, Tunneling, and Superconductors Resources with in Superconductors Measured by Electron Tunneling; Physical Review Letters, Vol. 5 Issue 4: 147 - 148 ; August 15, 1960 Electron Tunneling Between Two Superconductors; Physical Review Letters, Vol. 5 Issue 10

  16. Scanning tunneling microscope nanoetching method

    Science.gov (United States)

    Li, Yun-Zhong; Reifenberger, Ronald G.; Andres, Ronald P.

    1990-01-01

    A method is described for forming uniform nanometer sized depressions on the surface of a conducting substrate. A tunneling tip is used to apply tunneling current density sufficient to vaporize a localized area of the substrate surface. The resulting depressions or craters in the substrate surface can be formed in information encoding patterns readable with a scanning tunneling microscope.

  17. Physics of optimal resonant tunneling

    NARCIS (Netherlands)

    Racec, P.N.; Stoica, T.; Popescu, C.; Lepsa, M.I.; Roer, van de T.G.

    1997-01-01

    The optimal resonant tunneling, or the complete tunneling transparence of a biased double-barrier resonant-tunneling (DBRT) structure, is discussed. It is shown that its physics does not rest on the departure from the constant potential within the barriers and well, due to the applied electric

  18. Phonon structure in proximity tunnel junctions

    International Nuclear Information System (INIS)

    Zarate, H.G.; Carbotte, J.P.

    1985-01-01

    We have iterated to convergence, for the first time, a set of four coupled real axis Eliashberg equations for the superconducting gap and renormalization functions on each side of a proximity sandwich. We find that the phenomenological procedures developed to extract the size of the normal side electron-phonon interaction from tunneling data are often reasonable but may in some cases need modifications. In all the cases considered the superconducting phonon structure reflected on the normal side, as well as other structures, shows considerable agreement with experiment as to size, shape, and variation with barrier transmission coefficient. Finally, we study the effects of depairing on these structures

  19. Structural and tunneling properties of Si nanowires

    KAUST Repository

    Montes Muñoz, Enrique

    2013-12-06

    We investigate the electronic structure and electron transport properties of Si nanowires attached to Au electrodes from first principles using density functional theory and the nonequilibrium Green\\'s function method. We systematically study the dependence of the transport properties on the diameter of the nanowires, on the growth direction, and on the length. At the equilibrium Au-nanowire distance we find strong electronic coupling between the electrodes and nanowires, which results in a low contact resistance. With increasing nanowire length we study the transition from metallic to tunneling conductance for small applied bias. For the tunneling regime we investigate the decay of the conductance with the nanowire length and rationalize the results using the complex band structure of the pristine nanowires. The conductance is found to depend strongly on the growth direction, with nanowires grown along the ⟨110⟩ direction showing the smallest decay with length and the largest conductance and current.

  20. Structural and tunneling properties of Si nanowires

    KAUST Repository

    Montes Muñ oz, Enrique; Gkionis, Konstantinos; Rungger, Ivan; Sanvito, Stefano; Schwingenschlö gl, Udo

    2013-01-01

    We investigate the electronic structure and electron transport properties of Si nanowires attached to Au electrodes from first principles using density functional theory and the nonequilibrium Green's function method. We systematically study the dependence of the transport properties on the diameter of the nanowires, on the growth direction, and on the length. At the equilibrium Au-nanowire distance we find strong electronic coupling between the electrodes and nanowires, which results in a low contact resistance. With increasing nanowire length we study the transition from metallic to tunneling conductance for small applied bias. For the tunneling regime we investigate the decay of the conductance with the nanowire length and rationalize the results using the complex band structure of the pristine nanowires. The conductance is found to depend strongly on the growth direction, with nanowires grown along the ⟨110⟩ direction showing the smallest decay with length and the largest conductance and current.

  1. Aespoe Hard Rock Laboratory. The TASS-tunnel. Geological mapping

    Energy Technology Data Exchange (ETDEWEB)

    Hardenby, Carljohan (Vattenfall Power Consultant AB (Sweden)); Sigurdsson, Oskar (HAskGeokonsult AB (Sweden))

    2010-12-15

    The project entitled 'Sealing of tunnel at great depth' (Fintaetning av tunnel paa stort djup) needed a new tunnel in an area as undisturbed as possible and with cross-cutting water-bearing structures. The new tunnel, which was given the name TASS, was excavated on the -450 m level of SKB's Aespoe Hard Rock Laboratory (Aespoe HRL). The length of the tunnel is approximately 80 m and the theoretical tunnel area 19 m2. As is the case with all the other tunnels of the Aespoe HRL, the new tunnel has been geologically mapped. In addition, laser scanning combined with digital photography has been carried out. The tunnel was also used to test various types of explosives, borehole layouts and drilling techniques. The geological mapping of tunnel floor, walls and roof took place on four major occasions when a halt was made in tunnel excavation to allow for various tests. Before the mapping started on these occasions, laser scanning took place. The tunnel faces were mapped after each round (drilling, blasting and unloading). The present report describes the geological features of the tunnel and briefly how the laser scanning was performed. Water-bearing structures have been compared to similar structures in the neighbouring tunnels. The rock type names used here follow the old established Aespoe HRL nomenclature. Narrow (<0.1 m wide) dykes are normally mapped as fracture fillings. The dominating rock type is Aespoe diorite, which constitutes some 90 % of the rock mass. It is mostly mapped as fresh rock. . Minor constituents of the rock mass are fine-grained granite, hybrid rock, pegmatite, quartz veins/lenses and undifferentiated mafic rock. The mapping of fractures and deformation zones considers a number of parameters such as number of fractures, open/healed, width, length, description of fracture surfaces (roughness, planarity, etc), fracture filling, alteration and water. The deformation zones are discriminated into two main categories (&apos

  2. Aespoe Hard Rock Laboratory. The TASS-tunnel. Geological mapping

    International Nuclear Information System (INIS)

    Hardenby, Carljohan; Sigurdsson, Oskar

    2010-12-01

    The project entitled 'Sealing of tunnel at great depth' (Fintaetning av tunnel paa stort djup) needed a new tunnel in an area as undisturbed as possible and with cross-cutting water-bearing structures. The new tunnel, which was given the name TASS, was excavated on the -450 m level of SKB's Aespoe Hard Rock Laboratory (Aespoe HRL). The length of the tunnel is approximately 80 m and the theoretical tunnel area 19 m 2 . As is the case with all the other tunnels of the Aespoe HRL, the new tunnel has been geologically mapped. In addition, laser scanning combined with digital photography has been carried out. The tunnel was also used to test various types of explosives, borehole layouts and drilling techniques. The geological mapping of tunnel floor, walls and roof took place on four major occasions when a halt was made in tunnel excavation to allow for various tests. Before the mapping started on these occasions, laser scanning took place. The tunnel faces were mapped after each round (drilling, blasting and unloading). The present report describes the geological features of the tunnel and briefly how the laser scanning was performed. Water-bearing structures have been compared to similar structures in the neighbouring tunnels. The rock type names used here follow the old established Aespoe HRL nomenclature. Narrow (<0.1 m wide) dykes are normally mapped as fracture fillings. The dominating rock type is Aespoe diorite, which constitutes some 90 % of the rock mass. It is mostly mapped as fresh rock. . Minor constituents of the rock mass are fine-grained granite, hybrid rock, pegmatite, quartz veins/lenses and undifferentiated mafic rock. The mapping of fractures and deformation zones considers a number of parameters such as number of fractures, open/healed, width, length, description of fracture surfaces (roughness, planarity, etc), fracture filling, alteration and water. The deformation zones are discriminated into two main categories ('increased fracturing' and

  3. Response of a Circular Tunnel Through Rock to a Harmonic Rayleigh Wave

    Science.gov (United States)

    Kung, Chien-Lun; Wang, Tai-Tien; Chen, Cheng-Hsun; Huang, Tsan-Hwei

    2018-02-01

    A factor that combines tunnel depth and incident wavelength has been numerically determined to dominate the seismic responses of a tunnel in rocks that are subjected to harmonic P- and S-waves. This study applies the dynamic finite element method to investigate the seismic response of shallow overburden tunnels. Seismically induced stress increments in the lining of a circular tunnel that is subjected to an incident harmonic R-wave are examined. The determination of R-wave considers the dominant frequency of acceleration history of the 1999 Chi-Chi earthquake measured near the site with damage to two case tunnels at specifically shallow depth. An analysis reveals that the normalized seismically induced axial, shear and flexural stress increments in the lining of a tunnel reach their respective peaks at the depth h/ λ = 0.15, where the ground motion that is generated by an incident of R-wave has its maximum. The tunnel radius has a stronger effect on seismically induced stress increments than does tunnel depth. A greater tunnel radius yields higher normalized seismically induced axial stress increments and lower normalized seismically induced shear and flexural stress increments. The inertia of the thin overburden layer above the tunnel impedes the propagation of the wave and affects the motion of the ground around the tunnel. With an extremely shallow overburden, such an effect can change the envelope of the normalized seismically induced stress increments from one with a symmetric four-petal pattern into one with a non-symmetric three-petal pattern. The simulated results may partially elucidate the spatial distributions of cracks that were observed in the lining of the case tunnels.

  4. Tunneling path toward spintronics

    International Nuclear Information System (INIS)

    Miao Guoxing; Moodera, Jagadeesh S; Muenzenberg, Markus

    2011-01-01

    The phenomenon of quantum tunneling, which was discovered almost a century ago, has led to many subsequent discoveries. One such discovery, spin polarized tunneling, was made 40 years ago by Robert Meservey and Paul Tedrow (Tedrow and Meservey 1971 Phys. Rev. Lett. 26 192), and it has resulted in many fundamental observations and opened up an entirely new field of study. Until the mid-1990s, this field developed at a steady, low rate, after which a huge increase in activity suddenly occurred as a result of the unraveling of successful spin tunneling between two ferromagnets. In the past 15 years, several thousands of papers related to spin polarized tunneling and transport have been published, making this topic one of the hottest areas in condensed matter physics from both fundamental science and applications viewpoints. Many review papers and book chapters have been written in the past decade on this subject. This paper is not exhaustive by any means; rather, the emphases are on recent progress, technological developments and informing the reader about the current direction in which this topic is moving.

  5. Magnetic Fluxtube Tunneling

    Science.gov (United States)

    Dahlburg, Russell B.; Antiochos,, Spiro K.; Norton, D.

    1996-01-01

    We present numerical simulations of the collision and subsequent interaction of two initially orthogonal, twisted, force free field magnetic fluxtubes. The simulations were carried out using a new three dimensional explicit parallelized Fourier collocation algorithm for solving the viscoresistive equations of compressible magnetohydrodynamics. It is found that, under a wide range of conditions, the fluxtubes can 'tunnel' through each other. Two key conditions must be satisfied for tunneling to occur: the magnetic field must be highly twisted with a field line pitch much greater than 1, and the magnetic Lundquist number must be somewhat large, greater than or equal to 2880. This tunneling behavior has not been seen previously in studies of either vortex tube or magnetic fluxtube interactions. An examination of magnetic field lines shows that tunneling is due to a double reconnection mechanism. Initially orthogonal field lines reconnect at two specific locations, exchange interacting sections and 'pass' through each other. The implications of these results for solar and space plasmas are discussed.

  6. Tunnel nitrogen spill experiment

    International Nuclear Information System (INIS)

    Ageyev, A.I.; Alferov, V.N.; Mulholland, G.T.

    1983-01-01

    The Energy Saver Safety Analysis Report (SAR) found the tunnel oxygen deficiency considerations emphasized helium spills. These reports concluded the helium quickly warms and because of its low denisty, rises to the apex of the tunnel. The oxygen content below the apex and in all but the immediate vicinity of the helium spill is essentially unchanged and guarantees an undisturbed source of oxygen especially important to fallen personnel. In contrast nitrogen spills warm slower than helium due to the ratio of the enthalpy changes per unit volume spilled spread more uniformly across the tunnel cross-section when warmed because of the much smaller density difference with air, and generally provides a greater hazard than helium spills as a result. In particular there was concern that personnel that might fall to the floor for oxygen deficiency or other reasons might find less, and not more, oxygen with dire consequences. The SAR concluded tunnel nitrogen spills were under-investigated and led to this work

  7. The scanning tunneling microscope

    International Nuclear Information System (INIS)

    Salvan, F.

    1986-01-01

    A newly conceived microscope, based on a pure quantum phenomenon, is an ideal tool to study atom by atom the topography and properties of surfaces. Applications are presented: surface ''reconstruction'' of silicon, lamellar compound study, etc... Spectroscopy by tunnel effect will bring important information on electronic properties; it is presented with an application on silicon [fr

  8. Supramolecular tunneling junctions

    NARCIS (Netherlands)

    Wimbush, K.S.

    2012-01-01

    In this study a variety of supramolecular tunneling junctions were created. The basis of these junctions was a self-assembled monolayer of heptathioether functionalized ß-cyclodextrin (ßCD) formed on an ultra-flat Au surface, i.e., the bottom electrode. This gave a well-defined hexagonally packed

  9. Monitoring pilot projects on bored tunnelling : The Second Heinenoord Tunnel and the Botlek Rail Tunnel

    NARCIS (Netherlands)

    Bakker, K.J.; De Boer, F.; Admiraal, J.B.M.; Van Jaarsveld, E.P.

    1999-01-01

    Two pilot projects for bored tunnelling in soft soil have been undertaken in the Netherlands. The monitoring was commissioned under the authority of the Centre for Underground Construction (COB). A description of the research related to the Second Heinenoord Tunnel and the Botlek Rail Tunnel will be

  10. Measuring fire size in tunnels

    International Nuclear Information System (INIS)

    Guo, Xiaoping; Zhang, Qihui

    2013-01-01

    A new measure of fire size Q′ has been introduced in longitudinally ventilated tunnel as the ratio of flame height to the height of tunnel. The analysis in this article has shown that Q′ controls both the critical velocity and the maximum ceiling temperature in the tunnel. Before the fire flame reaches tunnel ceiling (Q′ 1.0), Fr approaches a constant value. This is also a well-known phenomenon in large tunnel fires. Tunnel ceiling temperature shows the opposite trend. Before the fire flame reaches the ceiling, it increases very slowly with the fire size. Once the flame has hit the ceiling of tunnel, temperature rises rapidly with Q′. The good agreement between the current prediction and three different sets of experimental data has demonstrated that the theory has correctly modelled the relation among the heat release rate of fire, ventilation flow and the height of tunnel. From design point of view, the theoretical maximum of critical velocity for a given tunnel can help to prevent oversized ventilation system. -- Highlights: • Fire sizing is an important safety measure in tunnel design. • New measure of fire size a function of HRR of fire, tunnel height and ventilation. • The measure can identify large and small fires. • The characteristics of different fire are consistent with observation in real fires

  11. Temperature dependent tunneling study of CaFe{sub 1.96}Ni{sub 0.04}As{sub 2} single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Dutta, Anirban, E-mail: adatta@iitk.ac.in; Gupta, Anjan K. [Department of Physics, IIT Kanpur, Kanpur-208 016 (India); Thamizhavel, A. [Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai-400 005 (India)

    2014-04-24

    We report on temperature dependent scanning tunneling microscopy and spectroscopy studies on CaFe{sub 1.96}Ni{sub 0.04}As{sub 2} single crystals in 5.4 – 19.7 K temperature range across the normal metal - superconductor transition temperature, T{sub C} = 14K. The in-situ cleaved crystals show reasonably flat surface with signatures of atomic resolution. The tunnel spectra show significant spatial inhomogeneity below T{sub C}, which reduces significantly as the temperature goes above the T{sub C}. We discuss these results in terms of an inhomogeneous electronic phase that may exist due to the vicinity of this composition to the quantum critical point.

  12. Utilization of geothermal energy in tunnels driven by tunnel drilling machines; Nutzung von Geothermie in TBM vorgetriebenen Tunneln

    Energy Technology Data Exchange (ETDEWEB)

    Pralle, Norbert; Franzius, Jan-Niklas [Ed. Zueblin AG, Stuttgart (Germany). Zentrale Technik; Liebel, Volker [Rehau AG und Co, Erlangen (Germany)

    2009-07-01

    Tunnels are nowadays more and more often constructed by means of tunnel boring machines rather than by conventional tunnel excavation. This is because tunnel boring provides a greater degree of safety for neighbouring structures, especially when it takes place in near-surface unconsolidated rock. However, bored tunnels offer less favourable framework conditions for the exploitation of geothermal energy because they are usually lined with concrete tubbings. Depending on the tunnel's diameter this normally involves rings of 1 to 2 metres width made up of several concrete elements. Adapting this type of design for geothermal energy production requires the use of an absorber piping system which permits coupling between the individual concrete elements while at the same time meeting the strict geometric tolerances required for its installation. A system of this type has been developed in a cooperation between the Rehau AG +Co. and Ed. Zueblin AG (Central Technology Services). These energy tubbings have already been installed in two tunnel structures and have also been examined in laboratory tests. An extensive measurement programme is under preparation which is aimed at gaining insights for the further optimisation of energy tubbings.

  13. Hybrid High-Temperature-Superconductor–Semiconductor Tunnel Diode

    Directory of Open Access Journals (Sweden)

    Alex Hayat

    2012-12-01

    Full Text Available We report the demonstration of hybrid high-T_{c}-superconductor–semiconductor tunnel junctions, enabling new interdisciplinary directions in condensed matter research. The devices are fabricated by our newly developed mechanical-bonding technique, resulting in high-T_{c}-superconductor–semiconductor tunnel diodes. Tunneling-spectra characterization of the hybrid junctions of Bi_{2}Sr_{2}CaCu_{2}O_{8+δ} combined with bulk GaAs, or a GaAs/AlGaAs quantum well, exhibits excess voltage and nonlinearity, similarly to spectra obtained in scanning-tunneling microscopy, and is in good agreement with theoretical predictions for a d-wave-superconductor–normal-material junction. Additional junctions are demonstrated using Bi_{2}Sr_{2}CaCu_{2}O_{8+δ} combined with graphite or Bi_{2}Te_{3}. Our results pave the way for new methods in unconventional superconductivity studies, novel materials, and quantum technology applications.

  14. InAs/Si Hetero-Junction Nanotube Tunnel Transistors

    KAUST Repository

    Hanna, Amir; Fahad, Hossain M.; Hussain, Muhammad Mustafa

    2015-01-01

    Hetero-structure tunnel junctions in non-planar gate-all-around nanowire (GAA NW) tunnel FETs (TFETs) have shown significant enhancement in ‘ON’ state tunnel current over their all-silicon counterpart. Here we show the unique concept of nanotube TFET in a hetero-structure configuration that is capable of much higher drive current as opposed to that of GAA NW TFETs.Through the use of inner/outer core-shell gates, a single III-V hetero-structured nanotube TFET leverages physically larger tunneling area while achieving higher driver current (ION) and saving real estates by eliminating arraying requirement. Numerical simulations has shown that a 10 nm thin nanotube TFET with a 100 nm core gate has a 5×normalized output current compared to a 10 nm diameter GAA NW TFET.

  15. InAs/Si Hetero-Junction Nanotube Tunnel Transistors

    KAUST Repository

    Hanna, Amir

    2015-04-29

    Hetero-structure tunnel junctions in non-planar gate-all-around nanowire (GAA NW) tunnel FETs (TFETs) have shown significant enhancement in ‘ON’ state tunnel current over their all-silicon counterpart. Here we show the unique concept of nanotube TFET in a hetero-structure configuration that is capable of much higher drive current as opposed to that of GAA NW TFETs.Through the use of inner/outer core-shell gates, a single III-V hetero-structured nanotube TFET leverages physically larger tunneling area while achieving higher driver current (ION) and saving real estates by eliminating arraying requirement. Numerical simulations has shown that a 10 nm thin nanotube TFET with a 100 nm core gate has a 5×normalized output current compared to a 10 nm diameter GAA NW TFET.

  16. Charge density waves as the origin of dip-hump structures in the differential tunneling conductance of cuprates: The case of d-wave superconductivity

    Energy Technology Data Exchange (ETDEWEB)

    Gabovich, Alexander M., E-mail: gabovich@iop.kiev.ua; Voitenko, Alexander I., E-mail: voitenko@iop.kiev.ua

    2014-08-15

    Highlights: • d-Wave superconductivity and charge-density waves compete for the Fermi surface. • Charge-density waves induce pseudogaps and peak-dip-hump structures in cuprates. • Tunnel spectra are non-symmetric due to the dielectric order-parameter phase fixation. • Scatter of the dielectric order parameter smears the tunnel spectra peculiarities. - Abstract: Quasiparticle differential current–voltage characteristics (CVCs) G(V) of non-symmetric tunnel junctions between d-wave superconductors with charge-density waves (CDWs) and normal metals were calculated. The dependences G(V) were shown to have a V-like form at small voltages V and low temperatures, and to be asymmetric at larger V owing to the presence of CDW peak in either of the V-branches. The spatial scatter of the dielectric (CDW) order parameter smears the CDW peak into a hump and induces a peak-dip-hump structure (PDHS) typical of CVCs observed for such junctions. At temperatures larger than the superconducting critical one, the PDHS evolves into a pseudogap depression. The results agree well with the scanning tunneling microscopy data for Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+δ} and YBa{sub 2}Cu{sub 3}O{sub 7−δ}. The results differ substantially from those obtained earlier for CDW s-wave superconductors.

  17. Tunneling magnetoresistance in ferromagnetic planar hetero-nanojunctions

    KAUST Repository

    Useinov, Arthur; Deminov, R. G.; Useinov, Niazbeck Kh H; Tagirov, Lenar R.

    2010-01-01

    as a tunneling barrier between the metallic electrodes, is comparable with the mean-free path of electrons. The dependence of the TMR on the bias voltage, physical parameters of the dielectric barrier, and spin polarization of the electrodes is studied

  18. A Quantitative Tunneling/Desorption Model for the Exchange Current at the Porous Electrode/Beta - Alumina/Alkali Metal Gas Three Phase Zone at 700-1300K

    Science.gov (United States)

    Williams, R. M.; Ryan, M. A.; Saipetch, C.; LeDuc, H. G.

    1996-01-01

    The exchange current observed at porous metal electrodes on sodium or potassium beta -alumina solid electrolytes in alkali metal vapor is quantitatively modeled with a multi-step process with good agreement with experimental results.

  19. Birkhoff normalization

    NARCIS (Netherlands)

    Broer, H.; Hoveijn, I.; Lunter, G.; Vegter, G.

    2003-01-01

    The Birkhoff normal form procedure is a widely used tool for approximating a Hamiltonian systems by a simpler one. This chapter starts out with an introduction to Hamiltonian mechanics, followed by an explanation of the Birkhoff normal form procedure. Finally we discuss several algorithms for

  20. Turbine endwall two-cylinder program. [wind tunnel and water tunnel investigation of three dimensional separation of fluid flow

    Science.gov (United States)

    Langston, L. S.

    1980-01-01

    Progress is reported in an effort to study the three dimensional separation of fluid flow around two isolated cylinders mounted on an endwall. The design and performance of a hydrogen bubble generator for water tunnel tests to determine bulk flow properties and to measure main stream velocity and boundary layer thickness are described. Although the water tunnel tests are behind schedule because of inlet distortion problems, tests are far enough along to indicate cylinder spacing, wall effects and low Reynolds number behavior, all of which impacted wind tunnel model design. The construction, assembly, and operation of the wind tunnel and the check out of its characteristics are described. An off-body potential flow program was adapted to calculate normal streams streamwise pressure gradients at the saddle point locations.

  1. Effect of superconducting electrons on the energy splitting of tunneling systems

    International Nuclear Information System (INIS)

    Yu, C.C.; Granato, A.V.

    1985-01-01

    We consider the effect of superconducting electrons on the magnitude of the energy splitting of a tunneling system. A specific example is a hydrogen atom tunneling in niobium. We find that in this case the splitting is roughly 20% smaller in the normal state than in the superconducting state. This difference in the splitting should be observable in neutron scattering and ultrasonic measurements

  2. Localization of the phantom force induced by the tunneling current

    Science.gov (United States)

    Wutscher, Thorsten; Weymouth, Alfred J.; Giessibl, Franz J.

    2012-05-01

    The phantom force is an apparently repulsive force, which can dominate the atomic contrast of an AFM image when a tunneling current is present. We described this effect with a simple resistive model, in which the tunneling current causes a voltage drop at the sample area underneath the probe tip. Because tunneling is a highly local process, the areal current density is quite high, which leads to an appreciable local voltage drop that in turn changes the electrostatic attraction between tip and sample. However, Si(111)-7×7 has a metallic surface state and it might be proposed that electrons should instead propagate along the surface state, as through a thin metal film on a semiconducting surface, before propagating into the bulk. In this paper, we first measure the phantom force on a sample that displays a metallic surface state [here, Si(111)-7×7] using tips with various radii. If the metallic surface state would lead to a constant electrostatic potential on the surface, we would expect a direct dependence of the phantom force with tip radius. In a second set of experiments, we study H/Si(100), a surface that does not have a metallic surface state. We conclude that a metallic surface state does not suppress the phantom force, but that the local resistance Rs has a strong effect on the magnitude of the phantom force.

  3. Geochemical study of acid mine drainage of the Big Lick Tunnel area, Williamstown, PA

    International Nuclear Information System (INIS)

    Tollin, S.

    1993-01-01

    Acid mine drainage in the anthracite region of Pennsylvania continues to be a significant environmental problem. This study examines the acid mine outflow from the Big Lick Tunnel, north of Williamstown, Dauphin County, Pennsylvania. The tunnel drains abandoned mines on the north side of the Big Lick Mountain. Mining ceased in the area circa 1940, and the tunnel has been in operation since that time. The water, soil and stream bed sediment geochemistry has been studied to determine their changes in chemistry over distance. The pH, TDS and metal concentrations were the primary focus. Metal concentrations were determined using an ICP unit. Data indicates the pH of the outflow to range between 6.7 and 7.3 Fe and Mn concentrations are as high as 9.7 ppb. Extensive metal precipitation (''yellow boy'') occurs within the tunnel and for several hundred meters from the mouth of the tunnel. The combination of near neutral pH and high metal concentration suggest that the drainage is in contact with highly alkaline materials prior to discharge from the tunnel. The geology of the area does not suggest bedrock as the possible source of alkaline material. One hypothesis is that the acidic water is reacting with the concrete tunnel and being neutralized. Data also suggests that the Fe precipitates much quicker than the Mn, resulting in a zonation between Fe-rich and Mn-rich sediments along the length of the drainage

  4. DIRECT TUNNELLING AND MOSFET BORDER TRAPS

    Directory of Open Access Journals (Sweden)

    Vladimir Drach

    2015-09-01

    Full Text Available The border traps, in particular slow border traps, are being investigated in metal-oxide-semiconductor structures, utilizing n-channel MOSFET as a test sample. The industrial process technology of test samples manufacturing is described. The automated experimental setup is discussed, the implementation of the experimental setup had made it possible to complete the entire set of measurements. The schematic diagram of automated experimental setup is shown. The charging time characteristic of the ID-VG shift reveals that the charging process is a direct tunnelling process and highly bias dependent.

  5. Tunnel boring machine applications

    International Nuclear Information System (INIS)

    Bhattacharyya, K.K.; McDonald, R.; Saunders, R.S.

    1992-01-01

    This paper reports that characterization of Yucca Mountain for a potential repository requires construction of an underground Exploratory Studies Facility (ESF). Mechanical excavating methods have been proposed for construction of the ESF as they offer a number of advantages over drilling and blasting at the Yucca Mountain site, including; less ground disturbance and therefore a potential for less adverse effects on the integrity of the site, creation of a more stable excavation cross section requiring less ground support, and an inherently safer and cleaner working environment. The tunnel boring machine (TBM) provides a proven technology for excavating the welded and unwelded Yucca Mountain tuffs. The access ramps and main underground tunnels form the largest part of the ESF underground construction work, and have been designed for excavation by TBM

  6. Programmable ferroelectric tunnel memristor

    Directory of Open Access Journals (Sweden)

    Andy eQuindeau

    2014-02-01

    Full Text Available We report an analogously programmable memristor based on genuine electronic resistive switching combining ferroelectric switching and electron tunneling. The tunnel current through an 8 unit cell thick epitaxial Pb(Zr[0.2]Ti[0.8]O[3] film sandwiched between La[0.7]Sr[0.3]MnO[3] and cobalt electrodes obeys the Kolmogorov-Avrami-Ishibashi model for bidimensional growth with a characteristic switching time in the order of 10^-7 seconds. The analytical description of switching kinetics allows us to develop a characteristic transfer function that has only one parameter viz. the characteristic switching time and fully predicts the resistive states of this type of memristor.

  7. Hawking Radiation As Tunneling

    International Nuclear Information System (INIS)

    Parikh, Maulik K.; Wilczek, Frank

    2000-01-01

    We present a short and direct derivation of Hawking radiation as a tunneling process, based on particles in a dynamical geometry. The imaginary part of the action for the classically forbidden process is related to the Boltzmann factor for emission at the Hawking temperature. Because the derivation respects conservation laws, the exact spectrum is not precisely thermal. We compare and contrast the problem of spontaneous emission of charged particles from a charged conductor

  8. Tunnel blasting - recent developments

    Energy Technology Data Exchange (ETDEWEB)

    White, T.E.

    1999-05-01

    While tunnelling machines are more efficient than previously, there are still areas where blasting is a more efficient method of advance. Drilling and design methods are increasingly sophisticated, as is choice of explosive. Explosive deployment must be carefully calculated so as to avoid desensitisation. Nitroglycerine may be used as slurries; bulk mixing on site of ANFO is also practised in mining in the UK. Electric detonators, Nonel tubes, and electronic detonators are also increasingly employed.

  9. The beam dump tunnels

    CERN Multimedia

    Patrice Loïez

    2002-01-01

    In these images workers are digging the tunnels that will be used to dump the counter-circulating beams. Travelling just a fraction under the speed of light, the beams at the LHC will each carry the energy of an aircraft carrier travelling at 12 knots. In order to dispose of these beams safely, a beam dump is used to extract the beam and diffuse it before it collides with a radiation shielded graphite target.

  10. Primary Tunnel Junction Thermometry

    International Nuclear Information System (INIS)

    Pekola, Jukka P.; Holmqvist, Tommy; Meschke, Matthias

    2008-01-01

    We describe the concept and experimental demonstration of primary thermometry based on a four-probe measurement of a single tunnel junction embedded within four arrays of junctions. We show that in this configuration random sample specific and environment-related errors can be avoided. This method relates temperature directly to Boltzmann constant, which will form the basis of the definition of temperature and realization of official temperature scales in the future

  11. Hydrodynamic optical soliton tunneling

    Science.gov (United States)

    Sprenger, P.; Hoefer, M. A.; El, G. A.

    2018-03-01

    A notion of hydrodynamic optical soliton tunneling is introduced in which a dark soliton is incident upon an evolving, broad potential barrier that arises from an appropriate variation of the input signal. The barriers considered include smooth rarefaction waves and highly oscillatory dispersive shock waves. Both the soliton and the barrier satisfy the same one-dimensional defocusing nonlinear Schrödinger (NLS) equation, which admits a convenient dispersive hydrodynamic interpretation. Under the scale separation assumption of nonlinear wave (Whitham) modulation theory, the highly nontrivial nonlinear interaction between the soliton and the evolving hydrodynamic barrier is described in terms of self-similar, simple wave solutions to an asymptotic reduction of the Whitham-NLS partial differential equations. One of the Riemann invariants of the reduced modulation system determines the characteristics of a soliton interacting with a mean flow that results in soliton tunneling or trapping. Another Riemann invariant yields the tunneled soliton's phase shift due to hydrodynamic interaction. Soliton interaction with hydrodynamic barriers gives rise to effects that include reversal of the soliton propagation direction and spontaneous soliton cavitation, which further suggest possible methods of dark soliton control in optical fibers.

  12. Resonant Tunneling Spin Pump

    Science.gov (United States)

    Ting, David Z.

    2007-01-01

    The resonant tunneling spin pump is a proposed semiconductor device that would generate spin-polarized electron currents. The resonant tunneling spin pump would be a purely electrical device in the sense that it would not contain any magnetic material and would not rely on an applied magnetic field. Also, unlike prior sources of spin-polarized electron currents, the proposed device would not depend on a source of circularly polarized light. The proposed semiconductor electron-spin filters would exploit the Rashba effect, which can induce energy splitting in what would otherwise be degenerate quantum states, caused by a spin-orbit interaction in conjunction with a structural-inversion asymmetry in the presence of interfacial electric fields in a semiconductor heterostructure. The magnitude of the energy split is proportional to the electron wave number. Theoretical studies have suggested the possibility of devices in which electron energy states would be split by the Rashba effect and spin-polarized currents would be extracted by resonant quantum-mechanical tunneling.

  13. Physics of amorphous metals

    CERN Document Server

    Kovalenko, Nikolai P; Krey, Uwe

    2008-01-01

    The discovery of bulk metallic glasses has led to a large increase in the industrial importance of amorphous metals, and this is expected to continue. This book is the first to describe the theoretical physics of amorphous metals, including the important theoretical development of the last 20 years.The renowned authors stress the universal aspects in their description of the phonon or magnon low-energy excitations in the amorphous metals, e.g. concerning the remarkable consequences of the properties of these excitations for the thermodynamics at low and intermediate temperatures. Tunneling

  14. Rock mass seismic imaging around the ONKALO tunnel, Olkiluoto 2007

    International Nuclear Information System (INIS)

    Cosma, C.; Cozma, M.; Balu, L.; Enescu, N.

    2008-11-01

    Posiva Oy prepares for disposal of spent nuclear fuel in bedrock focusing in Olkiluoto, Eurajoki. This is in accordance of the application filed in 1999, the Decision-in-Principle of the State Council in 2000, and ratification by the Parliament in 2001. Vibrometric Oy has performed a tunnel seismic survey in ONKALO access tunnel on a 100 m line in December 2007. Tunnel length (chainage) was 1720 - 1820 m (vertical depth 170 - 180 m). Measurement applied 120 source positions at 1 m spacing, and on the both ends at 4 m spacing. Electromechanical Vibsist-20 tool was used as the source. Hammer produced 15.36 s sweeps. Signal was recorded with 2-component geophone assemblies, installed in 400 mm long, 45 mm drillholes in the tunnel wall. Sweeps were recorded with Summit II seismograph and decoded to seismic traces. Also percussion drill rig, which is used in drilling the blasting holes in tunnel excavation, was tested from a 100-m distance as a seismic source. Signal is equally good as from actual seismic source, and may be applied later on for production. Obtained seismic results were processed with tomographic reconstruction of the first arrivals to P and S wave refraction tomograms, and to tomograms of Young's modulus and Shear Modulus. The obtained values correspond the typical levels known from Olkiluoto. There are indications of lower velocity near tunnel wall, but resolution is not adequate for further interpretation. Some variation of velocity is detected in the rock mass. Seismic data was also processed with normal reflection profile interpretation and migrated. As a result there was obtained reflection images to a 100-m distance from the tunnel. Several reflecting events were observed in the rock mass. Features making an angle of 30 deg or more with tunnel axis can be imaged from distances of tens of metres. Vertical fractures perpendicular to tunnel can be imaged only near the tunnel. Gently dipping features can be imaged below and above. Images are 2D, i

  15. Submucosal tunneling techniques: current perspectives.

    Science.gov (United States)

    Kobara, Hideki; Mori, Hirohito; Rafiq, Kazi; Fujihara, Shintaro; Nishiyama, Noriko; Ayaki, Maki; Yachida, Tatsuo; Matsunaga, Tae; Tani, Johji; Miyoshi, Hisaaki; Yoneyama, Hirohito; Morishita, Asahiro; Oryu, Makoto; Iwama, Hisakazu; Masaki, Tsutomu

    2014-01-01

    Advances in endoscopic submucosal dissection include a submucosal tunneling technique, involving the introduction of tunnels into the submucosa. These tunnels permit safer offset entry into the peritoneal cavity for natural orifice transluminal endoscopic surgery. Technical advantages include the visual identification of the layers of the gut, blood vessels, and subepithelial tumors. The creation of a mucosal flap that minimizes air and fluid leakage into the extraluminal cavity can enhance the safety and efficacy of surgery. This submucosal tunneling technique was adapted for esophageal myotomy, culminating in its application to patients with achalasia. This method, known as per oral endoscopic myotomy, has opened up the new discipline of submucosal endoscopic surgery. Other clinical applications of the submucosal tunneling technique include its use in the removal of gastrointestinal subepithelial tumors and endomicroscopy for the diagnosis of functional and motility disorders. This review suggests that the submucosal tunneling technique, involving a mucosal safety flap, can have potential values for future endoscopic developments.

  16. Study of the pair-interaction function in some normal metals; Etude de l'interaction de paire dans quelques metaux normaux

    Energy Technology Data Exchange (ETDEWEB)

    Pick, R [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

    1965-06-01

    The pair interaction function has been derived for the following metals: Li, Na, K, Al. It is obtained via a second order perturbation expansion of the wave functions of the conduction electrons using a self-consistent pseudo-potential. Exchange and correlations between those electrons have been ignored. Such an interaction is only valid at constant volume and depends on a single experimental parameter, namely the ionic volume. Its main features are a pronounced minimum in the vicinity of the nearest neighbours, especially marked in alkaline metals, and an asymptotic decrease of the form cos(2k{sub F}r)/r{sup 3}. This interaction gives the correct crystalline structure of these metals at 0 K as well as a good approximation of the phonon spectrum of an alkaline. The validity of the perturbation technique is discussed. We prove that the pair interaction function is correctly given to second order in the pseudo-potential despite the various approximations and errors involved by such a method. (author) [French] L'interaction de paire effective entre ions a ete calculee dans les metaux Li, Na, K et Al. Elle est obtenue par un developpement en serie de perturbation des fonctions d'onde des electrons de conduction. Le developpement est pousse au deuxieme ordre et utilise un pseudo-potentiel self-consistant. Les phenomenes d'echange et de correlations entre ces electrons ont ete negliges. L'interaction calculee n'a de sens qu'a volume constant. Elle depend d'un seul parametre experimental, le volume ionique. Elle se caracterise par un minimum prononce de l'energie de paire pour les proches voisins, surtout marque chez les alcalins. Elle decroit asymptotiquement en cos(2k{sub F}r)/r{sup 3}. Elle permet de predire la structure cristalline la plus stable a 0 K; elle donne le spectre de phonons des alcalins avec une assez bonne precision. Par ailleurs, la validite de la methode de perturbation du deuxieme ordre est discutee. On montre qu'elle donne correctement l

  17. Spin transfer torque with spin diffusion in magnetic tunnel junctions

    KAUST Repository

    Manchon, Aurelien

    2012-08-09

    Spin transport in magnetic tunnel junctions in the presence of spin diffusion is considered theoretically. Combining ballistic tunneling across the barrier and diffusive transport in the electrodes, we solve the spin dynamics equation in the metallic layers. We show that spin diffusion mixes the transverse spin current components and dramatically modifies the bias dependence of the effective spin transfer torque. This leads to a significant linear bias dependence of the out-of-plane torque, as well as a nonconventional thickness dependence of both spin torque components.

  18. Time-dependent transport of a localized surface plasmon through a linear array of metal nanoparticles: Precursor and normal mode contributions

    Science.gov (United States)

    Compaijen, P. J.; Malyshev, V. A.; Knoester, J.

    2018-02-01

    We theoretically investigate the time-dependent transport of a localized surface plasmon excitation through a linear array of identical and equidistantly spaced metal nanoparticles. Two different signals propagating through the array are found: one traveling with the group velocity of the surface plasmon polaritons of the system and damped exponentially, and the other running with the speed of light and decaying in a power-law fashion, as x-1 and x-2 for the transversal and longitudinal polarizations, respectively. The latter resembles the Sommerfeld-Brillouin forerunner and has not been identified in previous studies. The contribution of this signal dominates the plasmon transport at large distances. In addition, even though this signal is spread in the propagation direction and has the lateral dimension larger than the wavelength, the field profile close to the chain axis does not change with distance, indicating that this part of the signal is confined to the array.

  19. Semiclassical description of resonant tunneling

    International Nuclear Information System (INIS)

    Bogomolny, E.B.; Rouben, D.C.

    1996-01-01

    A semiclassical formula is calculated for the tunneling current of electrons trapped in a potential well which can tunnel into and across a wide quantum well. The tunneling current is measured at the second interface of this well and the calculations idealized an experimental situation where a strong magnetic field tilted with respect to an electric field was used. It is shown that the contribution to the tunneling current, due to trajectories which begin at the first interface and end on the second, is dominant for periodic orbits which hit both walls of the quantum well. (author)

  20. Numerical simulation of pollutant dispersion in urban roadway tunnels

    Directory of Open Access Journals (Sweden)

    Jingliang Dong

    2017-03-01

    Full Text Available Vehicular toxic emissions can easily contaminate the air quality of the enclosed tunnel environment, especially during rush hours with traffic jam events or low vehicle speeds, which poses serious health hazards to road utilizers. The piston effect generated by moving vehicles was normally considered adequate to discharge vitiated air out of short tunnel based on a typical driving speed. However, complex traffic conditions may yield unexpected consequences on in-tunnel air quality levels. This study numerically investigated the CO2 concentration to identify the in-tunnel pollutant dispersion under three traffic conditions including severe traffic congestion and traffic flow with low vehicle speeds. Fan conditions were considered to model the influence of mechanical winds on pollutant dispersion and comparison with vehicular piston effect was also performed. The results revealed elevated pollutant concentration regions were found at the vicinity of near-ground region and tunnel downstream. The vehicular piston effect can sufficiently remove the in-tunnel vehicular emissions when vehicles travel at relatively higher speed. However, pollutant accumulation occurs when vehicles are idling or moving at slow speed. Compared with traffic piston effect at high travelling speed, the mechanical ventilation of ceiling mounted fans only generate a limited contribution to the removal of emissions.

  1. A new method for evaluating the conformations and normal modes of macromolecule vibrations with a reduced force field. 2. Application to nonplanar distorted metal porphyrins

    Energy Technology Data Exchange (ETDEWEB)

    Unger, E.; Beck, M.; Lipski, R.J.; Dreybrodt, W.; Medforth, C.J.; Smith, K.M.; Schweitzer-Stenner, R.

    1999-11-11

    The authors have developed a novel method for molecular mechanics calculations and normal-mode analysis. It is based on symmetry of local units that constitutes the given molecule. Compared with general valence force field calculations, the number of free parameters is reduced by 40--80% in the procedure. It was found to reproduce very well the vibrational frequencies and mode compositions of aromatic compounds and porphyrins, as shown by comparison with DFT calculations. A slightly altered force field obtained from Ni(II) porphin was then used to calculate the structure and the normal modes of several meso-substituted Ni(II) porphyrins which are known to be subject to significant ruffling and/or saddling distortions. This method satisfactorily reproduces their nonplanar structure and Raman band frequencies in the natural abundance and isotopic derivative spectra. The polarization properties of bands from out-of-plane modes are in accordance with the predicted nonplanar distortions. Moreover, some of the modes below 800 cm{sup {minus}1} which appear intense in the Raman spectra contain considerable contributions from both in-plane and out-of-plane vibrations, so that the conventional mode assignments become questionable. The authors also demonstrate that the intensity and polarization of some low-frequency Raman bands can be used as a (quantitative) marker to elucidate type and magnitude of out-of-plane distortions. These were recently shown to affect heme groups of hemoglobin, myoglobin, and, in particular, of cytochrome c.

  2. Tunnelling anisotropic magnetoresistance due to antiferromagnetic CoO tunnel barriers

    Science.gov (United States)

    Wang, K.; Sanderink, J. G. M.; Bolhuis, T.; van der Wiel, W. G.; de Jong, M. P.

    2015-01-01

    A new approach in spintronics is based on spin-polarized charge transport phenomena governed by antiferromagnetic (AFM) materials. Recent studies have demonstrated the feasibility of this approach for AFM metals and semiconductors. We report tunneling anisotropic magnetoresistance (TAMR) due to the rotation of antiferromagnetic moments of an insulating CoO layer, incorporated into a tunnel junction consisting of sapphire(substrate)/fcc-Co/CoO/AlOx/Al. The ferromagnetic Co layer is exchange coupled to the AFM CoO layer and drives rotation of the AFM moments in an external magnetic field. The results may help pave the way towards the development of spintronic devices based on AFM insulators. PMID:26486931

  3. Engineers win award for Swiss tunnel

    CERN Multimedia

    2003-01-01

    A Derby engineering consultancy has won the Tunnelling Industry Award 2003 for Excellence in Tunnel Design, offered by the British Tunnelling Society, for its work on the LHC in Geneva, Switzerland (1/2 page).

  4. Probing odd-triplet contributions to the long-ranged proximity effect by scanning tunneling spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Diesch, Simon; Machon, Peter; Belzig, Wolfgang; Scheer, Elke [Universitaet Konstanz, Konstanz (Germany); Suergers, Christoph; Beckmann, Detlef [Karlsruhe Institute of Technology, Karlsruhe (Germany)

    2015-07-01

    In conventional superconductors, electrons are bound in singlet Cooper pairs, i.e. with opposite spin. More recently, experiments on superconductor-ferromagnet-systems have shown Cooper pairs tunneling through ferromagnetic layers, indicating Cooper pairs of equal spin, thus corresponding to a long-range triplet proximity effect. Most experimental evidence for triplet superconductivity comes from observations of the thickness dependence of the Josephson current through a ferromagnetic barrier, but there is an increasing interest in obtaining direct spectroscopic evidence. This project aims at analyzing the electronic density of states of a thin diffusive normal metal layer (Ag) coupled to a superconductor (Al) across a ferromagnetic insulator (EuS) using a scanning tunneling microscope in spectroscopy mode at 280 mK. For this purpose, we fabricated EuS films of different thicknesses and acquired spectroscopic data at different magnetic fields. We observe significant broadening of the superconductive energy gap and a variety of sub-gap structures including zero-bias conductance peaks induced by the presence of the ferromagnet.

  5. Temperature dependence of the superconducting proximity effect quantified by scanning tunneling spectroscopy

    Directory of Open Access Journals (Sweden)

    A. Stępniak

    2015-01-01

    Full Text Available Here, we present the first systematic study on the temperature dependence of the extension of the superconducting proximity effect in a 1–2 atomic layer thin metallic film, surrounding a superconducting Pb island. Scanning tunneling microscopy/spectroscopy (STM/STS measurements reveal the spatial variation of the local density of state on the film from 0.38 up to 1.8 K. In this temperature range the superconductivity of the island is almost unaffected and shows a constant gap of a 1.20 ± 0.03 meV. Using a superconducting Nb-tip a constant value of the proximity length of 17 ± 3 nm at 0.38 and 1.8 K is found. In contrast, experiments with a normal conductive W-tip indicate an apparent decrease of the proximity length with increasing temperature. This result is ascribed to the thermal broadening of the occupation of states of the tip, and it does not reflect an intrinsic temperature dependence of the proximity length. Our tunneling spectroscopy experiments shed fresh light on the fundamental issue of the temperature dependence of the proximity effect for atomic monolayers, where the intrinsic temperature dependence of the proximity effect is comparably weak.

  6. Thermovoltages in vacuum tunneling investigated by scanning tunneling microscopy

    OpenAIRE

    Hoffmann, D. H.; Rettenberger, Armin; Grand, Jean Yves; Läuger, K.; Leiderer, Paul; Dransfeld, Klaus; Möller, Rolf

    1995-01-01

    By heating the tunneling tip of a scanning tunneling microscope the thermoelectric properties of a variable vacuum barrier have been investigated. The lateral variation of the observed thermovoltage will be discussed for polycrystalline gold, stepped surfaces of silver, as well as for copper islands on silver.

  7. Vision based tunnel inspection using non-rigid registration

    Science.gov (United States)

    Badshah, Amir; Ullah, Shan; Shahzad, Danish

    2015-04-01

    Growing numbers of long tunnels across the globe has increased the need for safety measurements and inspections of tunnels in these days. To avoid serious damages, tunnel inspection is highly recommended at regular intervals of time to find any deformations or cracks at the right time. While following the stringent safety and tunnel accessibility standards, conventional geodetic surveying using techniques of civil engineering and other manual and mechanical methods are time consuming and results in troublesome of routine life. An automatic tunnel inspection by image processing techniques using non rigid registration has been proposed. There are many other image processing methods used for image registration purposes. Most of the processes are operation of images in its spatial domain like finding edges and corners by Harris edge detection method. These methods are quite time consuming and fail for some or other reasons like for blurred or images with noise. Due to use of image features directly by these methods in the process, are known by the group, correlation by image features. The other method is featureless correlation, in which the images are converted into its frequency domain and then correlated with each other. The shift in spatial domain is the same as in frequency domain, but the processing is order faster than in spatial domain. In the proposed method modified normalized phase correlation has been used to find any shift between two images. As pre pre-processing the tunnel images i.e. reference and template are divided into small patches. All these relative patches are registered by the proposed modified normalized phase correlation. By the application of the proposed algorithm we get the pixel movement of the images. And then these pixels shifts are converted to measuring units like mm, cm etc. After the complete process if there is any shift in the tunnel at described points are located.

  8. 3D Centrifuge Modeling of the Effect of Twin Tunneling to an Existing Pile Group

    Directory of Open Access Journals (Sweden)

    M. A. Soomr

    2017-10-01

    Full Text Available In densely built urban areas, it is inevitable that tunnels will be constructed near existing pile groups. The bearing capacity of a pile group depends on shear stress along the soil-pile interface and normal stress underneath the pile toe while the two would be adversely affected by the unloading process of tunneling. Although extensive studies have been conducted to investigate the effects of tunnel construction on existing single piles, the influence of twin tunnel advancement on an existing pile group is merely reported in the literature. In this study, a series of three-dimensional centrifuge tests were carried out to investigate the response of an existing pile group under working load subjected to twin tunneling at various locations in dry Toyoura sand. In each twin tunneling test, the first tunnel is constructed near the mid-depth of the pile shaft, while the second tunnel is subsequently constructed either next to, below or right underneath the pile toe (Tests G_ST, G_SB and G_SU, respectively. Among the three tests, the 2nd tunnel excavated near the pile toe (Test G_ST results in the smallest settlement but the largest transverse tilting (0.2% of pile group. Significant bending moment was induced at the pile head (1.4 times of its bending moment capacity due to the 2nd tunnel T. On the contrary, tunneling right underneath the toe of pile (i.e., Test G_SU results in the smallest tilting but largest settlement of the pile group (4.6% of pile diameter and incremental mobilisation of shaft resistance (13%. Due to stress release by the twin tunneling, the axial force taken by the front piles close to tunnels was reduced and partially transferred to the rear piles. This load transfer can increase the axial force in rear piles by 24%.

  9. Magnetic tunnel junctions with monolayer hexagonal boron nitride tunnel barriers

    Energy Technology Data Exchange (ETDEWEB)

    Piquemal-Banci, M.; Galceran, R.; Bouzehouane, K.; Anane, A.; Petroff, F.; Fert, A.; Dlubak, B.; Seneor, P. [Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay, Palaiseau 91767 (France); Caneva, S.; Martin, M.-B.; Weatherup, R. S.; Kidambi, P. R.; Robertson, J.; Hofmann, S. [Department of Engineering, University of Cambridge, Cambridge CB21PZ (United Kingdom); Xavier, S. [Thales Research and Technology, 1 avenue Augustin Fresnel, Palaiseau 91767 (France)

    2016-03-07

    We report on the integration of atomically thin 2D insulating hexagonal boron nitride (h-BN) tunnel barriers into Co/h-BN/Fe magnetic tunnel junctions (MTJs). The h-BN monolayer is directly grown by chemical vapor deposition on Fe. The Conductive Tip Atomic Force Microscopy (CT-AFM) measurements reveal the homogeneity of the tunnel behavior of our h-BN layers. As expected for tunneling, the resistance depends exponentially on the number of h-BN layers. The h-BN monolayer properties are also characterized through integration into complete MTJ devices. A Tunnel Magnetoresistance of up to 6% is observed for a MTJ based on a single atomically thin h-BN layer.

  10. DISCRETE TUNNELING CURRENT FLUCTUATIONS IN METAL-WATER-METAL TUNNEL JUNCTIONS. (R829623)

    Science.gov (United States)

    The perspectives, information and conclusions conveyed in research project abstracts, progress reports, final reports, journal abstracts and journal publications convey the viewpoints of the principal investigator and may not represent the views and policies of ORD and EPA. Concl...

  11. Universal tunneling behavior in technologically relevant P/N junction diodes

    International Nuclear Information System (INIS)

    Solomon, Paul M.; Jopling, Jason; Frank, David J.; D'Emic, Chris; Dokumaci, O.; Ronsheim, P.; Haensch, W.E.

    2004-01-01

    Band-to-band tunneling was studied in ion-implanted P/N junction diodes with profiles representative of present and future silicon complementary metal-oxide-silicon (CMOS) field effect transistors. Measurements were done over a wide range of temperatures and implant parameters. Profile parameters were derived from analysis of capacitance versus voltage characteristics, and compared to secondary-ion mass spectroscopy analysis. When the tunneling current was plotted against the effective tunneling distance (tunneling distance corrected for band curvature) a quasi-universal exponential reduction of tunneling current versus, tunneling distance was found with an attenuation length of 0.38 nm, corresponding to a tunneling effective mass of 0.29 times the free electron mass (m 0 ), and an extrapolated tunneling current at zero tunnel distance of 5.3x10 7 A/cm 2 at 300 K. These results are directly applicable for predicting drain to substrate currents in CMOS transistors on bulk silicon, and body currents in CMOS transistors in silicon-on-insulator

  12. Polymer based tunneling sensor

    Science.gov (United States)

    Cui, Tianhong (Inventor); Wang, Jing (Inventor); Zhao, Yongjun (Inventor)

    2006-01-01

    A process for fabricating a polymer based circuit by the following steps. A mold of a design is formed through a lithography process. The design is transferred to a polymer substrate through a hot embossing process. A metal layer is then deposited over at least part of said design and at least one electrical lead is connected to said metal layer.

  13. Excitations Élémentaires au Voisinage de la Surface de Séparation d'un Métal Normal et d'un Métal Supraconducteur

    Science.gov (United States)

    Saint-James, Par D.

    On étudie le spectre d'excitation pour une couche de métal normal déposée sur un supraconducteur. On montre que si l'interaction attractive électron-électron est négligeable dans le métal normal, il n'y a pas de gap d'énergie dans le spectre d'excitation, même si l'épaisseur de la couche normale est petite. Une étude analogue, conduisant à une conclusion similaire, est menée pour deux supraconducteurs accolés et pour des sphères de métal normal baignant dans un supraconducteur. L'effet prévu pourrait expliquer quelques résultats particuliers observés dans des mesures d'effet tunnel dans des supraconducteurs durs. The excitation spectrum of a layer of normal metal (N) deposited on a superconducting substrate (S) is discussed. It is shown that if the electron-electron attractive interaction is negligibly small in (N) there is no energy gap in the excitation spectrum even if the thickness of the layer (N) is small. A similar study, with equivalent conclusions, has been carried out for two superconductors and for normal metal spheres embedded in a superconductor. The effect may possibly explain some peculiar results of tunnelling experiments on hard superconductors.

  14. Spin tunnelling in mesoscopic systems

    Indian Academy of Sciences (India)

    We study spin tunnelling in molecular magnets as an instance of a mesoscopic phenomenon, with special emphasis on the molecule Fe8. We show that the tunnel splitting between various pairs of Zeeman levels in this molecule oscillates as a function of applied magnetic field, vanishing completely at special points in the ...

  15. Hawking temperature from tunnelling formalism

    OpenAIRE

    Mitra, P.

    2007-01-01

    It has recently been suggested that the attempt to understand Hawking radiation as tunnelling across black hole horizons produces a Hawking temperature double the standard value. It is explained here how one can obtain the standard value in the same tunnelling approach.

  16. Featuring of transient tunneling current by voltage pulse and application to an electrochemical biosensor

    Science.gov (United States)

    Yun, Jun Yeon; Lee, Won Cheol; Choi, Seong Wook; Park, Young June

    2018-03-01

    We suggest a voltage pulse method for detecting the transient tunneling current component (faradaic current component) in a metal/redox-active monolayer/electrolyte system. After applying the pulse to the metal electrode, the capacitive current prevails; therefore, it is difficult to extract the tunneling current, which carries information on the biochemical reactions occurring between the biomarkers in the electrolyte and the self-assembled monolayer (SAM) as the probe peptide system. Instead of waiting until the capacitive current diminishes, and thereby, the tunneling current also decreases, we try to extract the tunneling current in an early stage of the pulse. The method is based on the observation that the capacitive current becomes symmetrized in the positive and negative pulses after introducing the SAM on the metal electrode. When the energy level of the redox molecule is higher than the Fermi level of the metal under zero-bias condition, the tunneling current in the negative pulse can be extracted by subtracting the capacitive current obtained from the positive pulse, where the tunneling current is neglected. The experiment conducted for detecting trypsin as a biomarker shows that the method enhances the sensitivity and the specific-to-nonspecific ratio of the sensor device in the case of the nonspecific protein-abundant electrolyte solution, as evinced by cyclic voltammetry measurements in comparison.

  17. Tunneling Ionization of Diatomic Molecules

    DEFF Research Database (Denmark)

    Svensmark, Jens Søren Sieg

    2016-01-01

    When a molecule is subject to a strong laser field, there is a probability that an electron can escape, even though the electrons are bound by a large potential barrier. This is possible because electrons are quantum mechanical in nature, and they are therefore able to tunnel through potential...... barriers, an ability classical particles do not possess. Tunnelling is a fundamental quantum mechanical process, a process that is distinctly non-classical, so solving this tunnelling problem is not only relevant for molecular physics, but also for quantum theory in general. In this dissertation the theory...... of tunneling ionizaion of molecules is presented and the results of numerical calculations are shown. One perhaps surprising result is, that the frequently used Born-Oppenheimer approximation breaks down for weak fields when describing tunneling ionization. An analytic theory applicable in the weak-field limit...

  18. Tunneling from the past horizon

    Science.gov (United States)

    Kang, Subeom; Yeom, Dong-han

    2018-04-01

    We investigate a tunneling and emission process of a thin-shell from a Schwarzschild black hole, where the shell was initially located beyond the Einstein-Rosen bridge and finally appears at the right side of the Penrose diagram. In order to obtain such a solution, we should assume that the areal radius of the black hole horizon increases after the tunneling. Hence, there is a parameter range such that the tunneling rate is exponentially enhanced, rather than suppressed. We may have two interpretations regarding this. First, such a tunneling process from the past horizon is improbable by physical reasons; second, such a tunneling is possible in principle, but in order to obtain a stable Einstein-Rosen bridge, one needs to restrict the parameter spaces. If such a process is allowed, this can be a nonperturbative contribution to Einstein-Rosen bridges as well as eternal black holes.

  19. Integrating atomic layer deposition and ultra-high vacuum physical vapor deposition for in situ fabrication of tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Elliot, Alan J., E-mail: alane@ku.edu, E-mail: jwu@ku.edu; Malek, Gary A.; Lu, Rongtao; Han, Siyuan; Wu, Judy Z., E-mail: alane@ku.edu, E-mail: jwu@ku.edu [Department of Physics and Astronomy, The University of Kansas, Lawrence, Kansas 66045 (United States); Yu, Haifeng; Zhao, Shiping [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

    2014-07-15

    Atomic Layer Deposition (ALD) is a promising technique for growing ultrathin, pristine dielectrics on metal substrates, which is essential to many electronic devices. Tunnel junctions are an excellent example which require a leak-free, ultrathin dielectric tunnel barrier of typical thickness around 1 nm between two metal electrodes. A challenge in the development of ultrathin dielectric tunnel barriers using ALD is controlling the nucleation of dielectrics on metals with minimal formation of native oxides at the metal surface for high-quality interfaces between the tunnel barrier and metal electrodes. This poses a critical need for integrating ALD with ultra-high vacuum (UHV) physical vapor deposition. In order to address these challenges, a viscous-flow ALD chamber was designed and interfaced to an UHV magnetron sputtering chamber via a load lock. A sample transportation system was implemented for in situ sample transfer between the ALD, load lock, and sputtering chambers. Using this integrated ALD-UHV sputtering system, superconductor-insulator-superconductor (SIS) Nb-Al/Al{sub 2}O{sub 2}/Nb Josephson tunnel junctions were fabricated with tunnel barriers of thickness varied from sub-nm to ∼1 nm. The suitability of using an Al wetting layer for initiation of the ALD Al{sub 2}O{sub 3} tunnel barrier was investigated with ellipsometry, atomic force microscopy, and electrical transport measurements. With optimized processing conditions, leak-free SIS tunnel junctions were obtained, demonstrating the viability of this integrated ALD-UHV sputtering system for the fabrication of tunnel junctions and devices comprised of metal-dielectric-metal multilayers.

  20. Malware Normalization

    OpenAIRE

    Christodorescu, Mihai; Kinder, Johannes; Jha, Somesh; Katzenbeisser, Stefan; Veith, Helmut

    2005-01-01

    Malware is code designed for a malicious purpose, such as obtaining root privilege on a host. A malware detector identifies malware and thus prevents it from adversely affecting a host. In order to evade detection by malware detectors, malware writers use various obfuscation techniques to transform their malware. There is strong evidence that commercial malware detectors are susceptible to these evasion tactics. In this paper, we describe the design and implementation of a malware normalizer ...

  1. Thin-film chemical sensors based on electron tunneling

    Science.gov (United States)

    Khanna, S. K.; Lambe, J.; Leduc, H. G.; Thakoor, A. P.

    1985-01-01

    The physical mechanisms underlying a novel chemical sensor based on electron tunneling in metal-insulator-metal (MIM) tunnel junctions were studied. Chemical sensors based on electron tunneling were shown to be sensitive to a variety of substances that include iodine, mercury, bismuth, ethylenedibromide, and ethylenedichloride. A sensitivity of 13 parts per billion of iodine dissolved in hexane was demonstrated. The physical mechanisms involved in the chemical sensitivity of these devices were determined to be the chemical alteration of the surface electronic structure of the top metal electrode in the MIM structure. In addition, electroreflectance spectroscopy (ERS) was studied as a complementary surface-sensitive technique. ERS was shown to be sensitive to both iodine and mercury. Electrolyte electroreflectance and solid-state MIM electroreflectance revealed qualitatively the same chemical response. A modified thin-film structure was also studied in which a chemically active layer was introduced at the top Metal-Insulator interface of the MIM devices. Cobalt phthalocyanine was used for the chemically active layer in this study. Devices modified in this way were shown to be sensitive to iodine and nitrogen dioxide. The chemical sensitivity of the modified structure was due to conductance changes in the active layer.

  2. Inter-ribbon tunneling in graphene: An atomistic Bardeen approach

    Energy Technology Data Exchange (ETDEWEB)

    Van de Put, Maarten L., E-mail: maarten.vandeput@uantwerpen.be; Magnus, Wim [Department of Physics, Universiteit Antwerpen, B-2020 Antwerpen (Belgium); imec, B-3001 Heverlee (Belgium); Vandenberghe, William G.; Fischetti, Massimo V. [Department of Material Science, University of Texas at Dallas, Texas 75080 (United States); Sorée, Bart [Department of Physics, Universiteit Antwerpen, B-2020 Antwerpen (Belgium); imec, B-3001 Heverlee (Belgium); Department of Electrical Engineering, KU Leuven, B-3001 Leuven (Belgium)

    2016-06-07

    A weakly coupled system of two crossed graphene nanoribbons exhibits direct tunneling due to the overlap of the wavefunctions of both ribbons. We apply the Bardeen transfer Hamiltonian formalism, using atomistic band structure calculations to account for the effect of the atomic structure on the tunneling process. The strong quantum-size confinement of the nanoribbons is mirrored by the one-dimensional character of the electronic structure, resulting in properties that differ significantly from the case of inter-layer tunneling, where tunneling occurs between bulk two-dimensional graphene sheets. The current-voltage characteristics of the inter-ribbon tunneling structures exhibit resonance, as well as stepwise increases in current. Both features are caused by the energetic alignment of one-dimensional peaks in the density-of-states of the ribbons. Resonant tunneling occurs if the sign of the curvature of the coupled energy bands is equal, whereas a step-like increase in the current occurs if the signs are opposite. Changing the doping modulates the onset-voltage of the effects as well as their magnitude. Doping through electrostatic gating makes these structures promising for application towards steep slope switching devices. Using the atomistic empirical pseudopotentials based Bardeen transfer Hamiltonian method, inter-ribbon tunneling can be studied for the whole range of two-dimensional materials, such as transition metal dichalcogenides. The effects of resonance and of step-like increases in the current we observe in graphene ribbons are also expected in ribbons made from these alternative two-dimensional materials, because these effects are manifestations of the one-dimensional character of the density-of-states.

  3. Fluctuation Dominated Josephson Tunneling with a Scanning Tunneling Microscope

    International Nuclear Information System (INIS)

    Naaman, O.; Teizer, W.; Dynes, R. C.

    2001-01-01

    We demonstrate Josephson tunneling in vacuum tunnel junctions formed between a superconducting scanning tunneling microscope tip and a Pb film, for junction resistances in the range 50--300 k Omega. We show that the superconducting phase dynamics is dominated by thermal fluctuations, and that the Josephson current appears as a peak centered at small finite voltage. In the presence of microwave fields (f=15.0 GHz) the peak decreases in magnitude and shifts to higher voltages with increasing rf power, in agreement with theory

  4. Frequency driven inversion of tunnel magnetoimpedance and observation of positive tunnel magnetocapacitance in magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Parui, Subir; Ribeiro, Mário; Atxabal, Ainhoa; Llopis, Roger; Bedoya-Pinto, Amilcar; Sun, Xiangnan; Casanova, Fèlix; Hueso, Luis E.

    2016-01-01

    The relevance for modern computation of non-volatile high-frequency memories makes ac-transport measurements of magnetic tunnel junctions (MTJs) crucial for exploring this regime. Here, we demonstrate a frequency-mediated effect in which the tunnel magnetoimpedance reverses its sign in a classical Co/Al 2 O 3 /NiFe MTJ, whereas we only observe a gradual decrease in the tunnel magnetophase. Such effects are explained by the capacitive coupling of a parallel resistor and capacitor in the equivalent circuit model of the MTJ. Furthermore, we report a positive tunnel magnetocapacitance effect, suggesting the presence of a spin-capacitance at the two ferromagnet/tunnel-barrier interfaces. Our results are important for understanding spin transport phenomena at the high frequency regime in which the spin-polarized charge accumulation due to spin-dependent penetration depth at the two interfaces plays a crucial role.

  5. Frequency driven inversion of tunnel magnetoimpedance and observation of positive tunnel magnetocapacitance in magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Parui, Subir, E-mail: s.parui@nanogune.eu, E-mail: l.hueso@nanogune.eu; Ribeiro, Mário; Atxabal, Ainhoa; Llopis, Roger [CIC nanoGUNE, 20018 Donostia-San Sebastian (Spain); Bedoya-Pinto, Amilcar [CIC nanoGUNE, 20018 Donostia-San Sebastian (Spain); Max Planck Institute of Microstructure Physics, D-06120 Halle (Germany); Sun, Xiangnan [CIC nanoGUNE, 20018 Donostia-San Sebastian (Spain); National Center for Nanoscience and Technology, 100190 Beijing (China); Casanova, Fèlix; Hueso, Luis E., E-mail: s.parui@nanogune.eu, E-mail: l.hueso@nanogune.eu [CIC nanoGUNE, 20018 Donostia-San Sebastian (Spain); IKERBASQUE, Basque Foundation for Science, 48011 Bilbao (Spain)

    2016-08-01

    The relevance for modern computation of non-volatile high-frequency memories makes ac-transport measurements of magnetic tunnel junctions (MTJs) crucial for exploring this regime. Here, we demonstrate a frequency-mediated effect in which the tunnel magnetoimpedance reverses its sign in a classical Co/Al{sub 2}O{sub 3}/NiFe MTJ, whereas we only observe a gradual decrease in the tunnel magnetophase. Such effects are explained by the capacitive coupling of a parallel resistor and capacitor in the equivalent circuit model of the MTJ. Furthermore, we report a positive tunnel magnetocapacitance effect, suggesting the presence of a spin-capacitance at the two ferromagnet/tunnel-barrier interfaces. Our results are important for understanding spin transport phenomena at the high frequency regime in which the spin-polarized charge accumulation due to spin-dependent penetration depth at the two interfaces plays a crucial role.

  6. Study of the Integration of the CNU-TS-1 Mobile Tunnel Monitoring System.

    Science.gov (United States)

    Du, Liming; Zhong, Ruofei; Sun, Haili; Zhu, Qiang; Zhang, Zhen

    2018-02-01

    A rapid, precise and automated means for the regular inspection and maintenance of a large number of tunnels is needed. Based on the depth study of the tunnel monitoring method, the CNU-TS-1 mobile tunnel monitoring system (TS1) is developed and presented. It can efficiently obtain the cross-sections that are orthogonal to the tunnel in a dynamic way, and the control measurements that depend on design data are eliminated. By using odometers to locate the cross-sections and correcting the data based on longitudinal joints of tunnel segment lining, the cost of the system has been significantly reduced, and the interval between adjacent cross-sections can reach 1-2 cm when pushed to collect data at a normal walking speed. Meanwhile, the relative deformation of tunnel can be analyzed by selecting cross-sections from original data. Through the measurement of the actual tunnel, the applicability of the system for tunnel deformation detection is verified, and the system is shown to be 15 times more efficient than that of the total station. The simulation experiment of the tunnel deformation indicates that the measurement accuracy of TS1 for cross-sections is 1.1 mm. Compared with the traditional method, TS1 improves the efficiency as well as increases the density of the obtained points.

  7. Study of the Integration of the CNU-TS-1 Mobile Tunnel Monitoring System

    Directory of Open Access Journals (Sweden)

    Liming Du

    2018-02-01

    Full Text Available A rapid, precise and automated means for the regular inspection and maintenance of a large number of tunnels is needed. Based on the depth study of the tunnel monitoring method, the CNU-TS-1 mobile tunnel monitoring system (TS1 is developed and presented. It can efficiently obtain the cross-sections that are orthogonal to the tunnel in a dynamic way, and the control measurements that depend on design data are eliminated. By using odometers to locate the cross-sections and correcting the data based on longitudinal joints of tunnel segment lining, the cost of the system has been significantly reduced, and the interval between adjacent cross-sections can reach 1–2 cm when pushed to collect data at a normal walking speed. Meanwhile, the relative deformation of tunnel can be analyzed by selecting cross-sections from original data. Through the measurement of the actual tunnel, the applicability of the system for tunnel deformation detection is verified, and the system is shown to be 15 times more efficient than that of the total station. The simulation experiment of the tunnel deformation indicates that the measurement accuracy of TS1 for cross-sections is 1.1 mm. Compared with the traditional method, TS1 improves the efficiency as well as increases the density of the obtained points.

  8. Protein Tunnels: The Case of Urease Accessory Proteins.

    Science.gov (United States)

    Musiani, Francesco; Gioia, Dario; Masetti, Matteo; Falchi, Federico; Cavalli, Andrea; Recanatini, Maurizio; Ciurli, Stefano

    2017-05-09

    Transition metals are both essential micronutrients and limited in environmental availability. The Ni(II)-dependent urease protein, the most efficient enzyme known to date, is a paradigm for studying the strategies that cells use to handle an essential, yet toxic, metal ion. Urease is a virulence factor of several human pathogens, in addition to decreasing the efficiency of soil organic nitrogen fertilization. Ni(II) insertion in the urease active site is performed through the action of three essential accessory proteins: UreD, UreF, and UreG. The crystal structure of the UreD-UreF-UreG complex from the human pathogen Helicobacter pylori (HpUreDFG) revealed the presence of tunnels that cross the entire length of both UreF and UreD, potentially able to deliver Ni(II) ions from UreG to apo-urease. Atomistic molecular dynamics simulations performed on the HpUreDFG complex in explicit solvent and at physiological ionic conditions demonstrate the stability of these protein tunnels in solution and provide insights on the trafficking of water molecules inside the tunnels. The presence of different alternative routes across the identified tunnels for Ni(II) ions, water molecules, and carbonate ions, all involved in urease activation, is highlighted here, and their potential role in the urease activation mechanism is discussed.

  9. Normal accidents

    International Nuclear Information System (INIS)

    Perrow, C.

    1989-01-01

    The author has chosen numerous concrete examples to illustrate the hazardousness inherent in high-risk technologies. Starting with the TMI reactor accident in 1979, he shows that it is not only the nuclear energy sector that bears the risk of 'normal accidents', but also quite a number of other technologies and industrial sectors, or research fields. The author refers to the petrochemical industry, shipping, air traffic, large dams, mining activities, and genetic engineering, showing that due to the complexity of the systems and their manifold, rapidly interacting processes, accidents happen that cannot be thoroughly calculated, and hence are unavoidable. (orig./HP) [de

  10. High performance vertical tunneling diodes using graphene/hexagonal boron nitride/graphene hetero-structure

    Energy Technology Data Exchange (ETDEWEB)

    Hwan Lee, Seung; Lee, Jia; Ho Ra, Chang; Liu, Xiaochi; Hwang, Euyheon [Samsung-SKKU Graphene Center (SSGC), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Sup Choi, Min [Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Center for Human Interface Nano Technology (HINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Hee Choi, Jun [Frontier Research Laboratory, Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., Yongin, Gyeonggi-do 446-711 (Korea, Republic of); Zhong, Jianqiang; Chen, Wei [Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore); Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543 (Singapore); Jong Yoo, Won, E-mail: yoowj@skku.edu [Samsung-SKKU Graphene Center (SSGC), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Center for Human Interface Nano Technology (HINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of)

    2014-02-03

    A tunneling rectifier prepared from vertically stacked two-dimensional (2D) materials composed of chemically doped graphene electrodes and hexagonal boron nitride (h-BN) tunneling barrier was demonstrated. The asymmetric chemical doping to graphene with linear dispersion property induces rectifying behavior effectively, by facilitating Fowler-Nordheim tunneling at high forward biases. It results in excellent diode performances of a hetero-structured graphene/h-BN/graphene tunneling diode, with an asymmetric factor exceeding 1000, a nonlinearity of ∼40, and a peak sensitivity of ∼12 V{sup −1}, which are superior to contending metal-insulator-metal diodes, showing great potential for future flexible and transparent electronic devices.

  11. Tunnel production enhances quality in organic carrot seed production

    DEFF Research Database (Denmark)

    Deleuran, L C; Boelt, B

    2009-01-01

    production of open-pollinated carrot varieties increased the yield and germination percentages when compared with normal field conditions. Yield was in the range of 100-250 g and 2-17 g seeds m-2 respectively, and germination percentage was 84-95 and 43-55, respectively. However, hybrid carrot seed...... production showed lower yields than did their open-pollinated counterparts. Yields ranging from 60-123 g seeds m-2 can be obtained, but the production needs to be carefully planned and monitored. Different growing systems in tunnels have been studied in both open-pollinated and hybrid carrot (Daucus carota L......In Denmark, organic vegetable seed production is possible for some of the late-maturing species when the maturing is performed in lightweight tunnels which are also relevant for the isolation of small-scale production. The tunnel system offers several advantages, e.g., it is possible to control...

  12. Tunneling spectroscopy on superconducting Nb3Sn with artioficial barriers

    International Nuclear Information System (INIS)

    Schneider, U.

    1984-03-01

    Tunneling diodes on Nb 3 Sn were prepared by magnetron sputtering. The superconducting transition temperatures of the Nb 3 Sn films were in the range of 5 to 18 K. An energetically low-lying structure in the tunneling density of states has been localized by detailed studies of the second derivative of the current-voltage characteristics of the diodes. This structure was found near 5.5 meV for stoichiometric Nb 3 Sn (Tsub(c) approx.= 18 K) and at 6.7 meV for understoichiometric Nb 3 Sn (Tsub(c) approx.= 5 K). The minimum in the conductance at zero energy found in the normal state could be identified to be mainly due to inelastic phonon processes of barrier phonons and Nb 3 Sn phonons. Deformations were found in the tunneling density of states of stoichiometric Nb 3 Sn diodes which lead to contradiction when explained by proximity effects. (orig./GSCH)

  13. High resolution imaging of tunnels by magnetic resonance neurography

    Energy Technology Data Exchange (ETDEWEB)

    Subhawong, Ty K.; Thawait, Shrey K.; Machado, Antonio J.; Carrino, John A.; Chhabra, Avneesh [Johns Hopkins Hospital, The Russell H. Morgan Department of Radiology and Radiological Science, Baltimore, MD (United States); Wang, Kenneth C. [Baltimore VA Medical Center, Department of Radiology, Baltimore, MD (United States); Williams, Eric H. [Dellon Institute for Peripheral Nerve Surgery, Towson, MD (United States); Hashemi, Shahreyar Shar [Johns Hopkins Hospital, Division of Plastic and Reconstructive Surgery, Baltimore, MD (United States)

    2012-01-15

    Peripheral nerves often traverse confined fibro-osseous and fibro-muscular tunnels in the extremities, where they are particularly vulnerable to entrapment and compressive neuropathy. This gives rise to various tunnel syndromes, characterized by distinct patterns of muscular weakness and sensory deficits. This article focuses on several upper and lower extremity tunnels, in which direct visualization of the normal and abnormal nerve in question is possible with high resolution 3T MR neurography (MRN). MRN can also serve as a useful adjunct to clinical and electrophysiologic exams by discriminating adhesive lesions (perineural scar) from compressive lesions (such as tumor, ganglion, hypertrophic callous, or anomalous muscles) responsible for symptoms, thereby guiding appropriate treatment. (orig.)

  14. High resolution imaging of tunnels by magnetic resonance neurography

    International Nuclear Information System (INIS)

    Subhawong, Ty K.; Thawait, Shrey K.; Machado, Antonio J.; Carrino, John A.; Chhabra, Avneesh; Wang, Kenneth C.; Williams, Eric H.; Hashemi, Shahreyar Shar

    2012-01-01

    Peripheral nerves often traverse confined fibro-osseous and fibro-muscular tunnels in the extremities, where they are particularly vulnerable to entrapment and compressive neuropathy. This gives rise to various tunnel syndromes, characterized by distinct patterns of muscular weakness and sensory deficits. This article focuses on several upper and lower extremity tunnels, in which direct visualization of the normal and abnormal nerve in question is possible with high resolution 3T MR neurography (MRN). MRN can also serve as a useful adjunct to clinical and electrophysiologic exams by discriminating adhesive lesions (perineural scar) from compressive lesions (such as tumor, ganglion, hypertrophic callous, or anomalous muscles) responsible for symptoms, thereby guiding appropriate treatment. (orig.)

  15. Niobium nitride Josephson tunnel junctions with magnesium oxide barriers

    International Nuclear Information System (INIS)

    Shoji, A.; Aoyagi, M.; Kosaka, S.; Shinoki, F.; Hayakawa, H.

    1985-01-01

    Niobium nitride-niobium nitride Josephson tunnel junctions have been fabricated using amorphous magnesium oxide (a-MgO) films as barriers. These junctions have excellent tunneling characteristics. For example, a large gap voltage (V/sub g/ = 5.1 mV), a large product of the maximum critical current and the normal tunneling resistance (I/sub c/R/sub n/ = 3.25 mV), and a small subgap leakage current (V/sub m/ = 45 mV, measured at 3 mV) have been obtained for a NbN/a-MgO/NbN junction. The critical current of this junction remains finite up to 14.5 K

  16. Ultrahigh Tunneling-Magnetoresistance Ratios in Nitride-Based Perpendicular Magnetic Tunnel Junctions from First Principles

    Science.gov (United States)

    Yang, Baishun; Tao, Lingling; Jiang, Leina; Chen, Weizhao; Tang, Ping; Yan, Yu; Han, Xiufeng

    2018-05-01

    We report a first-principles study of electronic structures, magnetic properties, and the tunneling-magnetoresistance (TMR) effect of a series of ferromagnetic nitride M4N (M =Fe , Co, Ni)-based magnetic tunnel junctions (MTJs). It is found that bulk Fe4 N reveals a half-metal nature in terms of the Δ1 state. A perpendicular magnetic anisotropy is observed in the periodic system Fe4 N /MgO . In particular, the ultrahigh TMR ratio of over 24 000% is predicted in the Fe4 N /MgO /Fe4N MTJ due to the interface resonance tunneling and relatively high transmission for states of other symmetry. Besides, the large TMR can be maintained with the change of atomic details at the interface, such as the order-disorder interface, the change of thickness of the MgO barrier, and different in-plane lattice constants of the MTJ. The physical origin of the TMR effect can be well understood by analyzing the band structure and transmission channel of bulk Fe4 N as well as the transmission in momentum space of Fe4 N /MgO /Fe4N . Our results suggest that the Fe4 N /MgO /Fe4N MTJ is a benefit for spintronic applications.

  17. Tunneling of Atoms, Nuclei and Molecules

    International Nuclear Information System (INIS)

    Bertulani, C.A.

    2015-01-01

    This is a brief review of few relevant topics on tunneling of composite particles and how the coupling to intrinsic and external degrees of freedom affects tunneling probabilities. I discuss the phenomena of resonant tunneling, different barriers seen by subsystems, damping of resonant tunneling by level bunching and continuum effects due to particle dissociation. (author)

  18. Computational Multiqubit Tunnelling in Programmable Quantum Annealers

    Science.gov (United States)

    2016-08-25

    ARTICLE Received 3 Jun 2015 | Accepted 26 Nov 2015 | Published 7 Jan 2016 Computational multiqubit tunnelling in programmable quantum annealers...state itself. Quantum tunnelling has been hypothesized as an advantageous physical resource for optimization in quantum annealing. However, computational ...qubit tunnelling plays a computational role in a currently available programmable quantum annealer. We devise a probe for tunnelling, a computational

  19. 78 FR 46117 - National Tunnel Inspection Standards

    Science.gov (United States)

    2013-07-30

    ... busiest vehicular tunnel in the world. The Fort McHenry Tunnel handles a daily traffic volume of more than... vehicular, transit, and rail tunnels in the New York City metropolitan area. Although it is still too early... congestion along alternative routes, and save users both dollars and fuel. If these tunnels were closed due...

  20. Een systeem voor classificatie van korte tunnels.

    NARCIS (Netherlands)

    Schreuder, D.A.

    1985-01-01

    The most difficult problems in the lighting of tunnels occur in daylight and in particular in the entrance of the tunnel, while drivers approaching the tunnel must be able to look into the tunnel from the outside to detect the road course and eventual obstacles. A classification should The made on

  1. Tunnel fire testing and modeling the Morgex North tunnel experiment

    CERN Document Server

    Borghetti, Fabio; Gandini, Paolo; Frassoldati, Alessio; Tavelli, Silvia

    2017-01-01

    This book aims to cast light on all aspects of tunnel fires, based on experimental activities and theoretical and computational fluid dynamics (CFD) analyses. In particular, the authors describe a transient full-scale fire test (~15 MW), explaining how they designed and performed the experimental activity inside the Morgex North tunnel in Italy. The entire organization of the experiment is described, from preliminary evaluations to the solutions found for management of operational difficulties and safety issues. This fire test allowed the collection of different measurements (temperature, air velocity, smoke composition, pollutant species) useful for validating and improving CFD codes and for testing the real behavior of the tunnel and its safety systems during a diesel oil fire with a significant heat release rate. Finally, the fire dynamics are compared with empirical correlations, CFD simulations, and literature measurements obtained in other similar tunnel fire tests. This book will be of interest to all ...

  2. Apparent tunneling in chemical reactions

    DEFF Research Database (Denmark)

    Henriksen, Niels Engholm; Hansen, Flemming Yssing; Billing, G. D.

    2000-01-01

    A necessary condition for tunneling in a chemical reaction is that the probability of crossing a barrier is non-zero, when the energy of the reactants is below the potential energy of the barrier. Due to the non-classical nature (i.e, momentum uncertainty) of vibrational states this is, however......, not a sufficient condition in order to establish genuine tunneling as a result of quantum dynamics. This proposition is illustrated for a two-dimensional model potential describing dissociative sticking of N-2 on Ru(s). It is suggested that the remarkable heavy atom tunneling, found in this system, is related...

  3. The role of local tunneling states in superconductivity at disordered interfaces

    International Nuclear Information System (INIS)

    Nguyen, B.D.; Simanek, E.

    1982-01-01

    The origin of the enhancement of the superconducting transition temperature caused by the presence of disordered interfaces is studied. An enhancement mechanism involving the tunneling of the conduction electrons from metal into the local state coupled to the ''two-level state systems'' in the interfaces region, is considered. In this model, the reduction of the tunneling matrix elements by orthogonality blocking can be avoided. (author)

  4. Tunneling magnetoresistance in ferromagnetic planar hetero-nanojunctions

    KAUST Repository

    Useinov, Arthur

    2010-05-03

    We present a theoretical study of the tunneling magnetoresistance (TMR) in nanojunctions between non-identical ferromagnetic metals in the framework of the quasiclassical approach. The lateral size of a dielectric oxide layer, which is considered as a tunneling barrier between the metallic electrodes, is comparable with the mean-free path of electrons. The dependence of the TMR on the bias voltage, physical parameters of the dielectric barrier, and spin polarization of the electrodes is studied. It is demonstrated that a simple enough theory can give high TMR magnitudes of several hundred percent at bias voltages below 0.5 V. A qualitative comparison with the available experimental data is given. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Spin inelastic electron tunneling spectroscopy on local spin adsorbed on surface.

    Science.gov (United States)

    Fransson, J

    2009-06-01

    The recent experimental conductance measurements taken on magnetic impurities on metallic surfaces, using scanning tunneling microscopy technique and suggesting occurrence of inelastic scattering processes, are theoretically addressed. We argue that the observed conductance signatures are caused by transitions between the spin states that have opened due to, for example, exchange coupling between the local spins and the tunneling electrons, and are directly interpretable in terms of inelastic transitions energies. Feasible measurements using spin-polarized scanning tunneling microscopy that would enable new information about the excitation spectrum of the local spins are discussed.

  6. Tunneling progress on the Yucca Mountain Project

    International Nuclear Information System (INIS)

    Hansmire, W.H.; Munzer, R.J.

    1996-01-01

    The current status of tunneling progress on the Yucca Mountain Project (YMP) is presented in this paper. The Exploratory Studies Facility (ESF), a key part of the YMP, has been long in development and construction is ongoing. This is a progress report on the tunneling aspects of the ESF as of January 1, 1996. For purposes of discussion in this summary, the tunneling has progressed in four general phases. The paper describes: tunneling in jointed rock under low stress; tunneling through the Bow Ridge Fault and soft rock; tunneling through the Imbricate Fault Zone; and Tunneling into the candidate repository formation

  7. Chiral tunneling in gated inversion symmetric Weyl semimetal

    Science.gov (United States)

    Bai, Chunxu; Yang, Yanling; Chang, Kai

    2016-01-01

    Based on the chirality-resolved transfer-matrix method, we evaluate the chiral transport tunneling through Weyl semimetal multi-barrier structures created by periodic gates. It is shown that, in sharp contrast to the cases of three dimensional normal semimetals, the tunneling coefficient as a function of incident angle shows a strong anisotropic behavior. Importantly, the tunneling coefficients display an interesting periodic oscillation as a function of the crystallographic angle of the structures. With the increasement of the barriers, the tunneling current shows a Fabry-Perot type interferences. For superlattice structures, the fancy miniband effect has been revealed. Our results show that the angular dependence of the first bandgap can be reduced into a Lorentz formula. The disorder suppresses the oscillation of the tunneling conductance, but would not affect its average amplitude. This is in sharp contrast to that in multi-barrier conventional semiconductor structures. Moreover, numerical results for the dependence of the angularly averaged conductance on the incident energy and the structure parameters are presented and contrasted with those in two dimensional relativistic materials. Our work suggests that the gated Weyl semimetal opens a possible new route to access to new type nanoelectronic device. PMID:26888491

  8. Reconstructing Normality

    DEFF Research Database (Denmark)

    Gildberg, Frederik Alkier; Bradley, Stephen K.; Fristed, Peter Billeskov

    2012-01-01

    Forensic psychiatry is an area of priority for the Danish Government. As the field expands, this calls for increased knowledge about mental health nursing practice, as this is part of the forensic psychiatry treatment offered. However, only sparse research exists in this area. The aim of this study...... was to investigate the characteristics of forensic mental health nursing staff interaction with forensic mental health inpatients and to explore how staff give meaning to these interactions. The project included 32 forensic mental health staff members, with over 307 hours of participant observations, 48 informal....... The intention is to establish a trusting relationship to form behaviour and perceptual-corrective care, which is characterized by staff's endeavours to change, halt, or support the patient's behaviour or perception in relation to staff's perception of normality. The intention is to support and teach the patient...

  9. Pursuing Normality

    DEFF Research Database (Denmark)

    Madsen, Louise Sofia; Handberg, Charlotte

    2018-01-01

    implying an influence on whether to participate in cancer survivorship care programs. Because of "pursuing normality," 8 of 9 participants opted out of cancer survivorship care programming due to prospects of "being cured" and perceptions of cancer survivorship care as "a continuation of the disease......BACKGROUND: The present study explored the reflections on cancer survivorship care of lymphoma survivors in active treatment. Lymphoma survivors have survivorship care needs, yet their participation in cancer survivorship care programs is still reported as low. OBJECTIVE: The aim of this study...... was to understand the reflections on cancer survivorship care of lymphoma survivors to aid the future planning of cancer survivorship care and overcome barriers to participation. METHODS: Data were generated in a hematological ward during 4 months of ethnographic fieldwork, including participant observation and 46...

  10. Tunneling through landsliding zone; Jisuberi chitainai no tunnel seko

    Energy Technology Data Exchange (ETDEWEB)

    Konbu, A; Hatabu, K; Kano, T [Tekken Corp., Tokyo (Japan)

    1994-08-01

    At the new tunnel construction site of the Shirakata tunnel on the Obama line in Yamaguchi Prefecture, a landsliding occurred at about 60 meters to the upper portion obliquely to the right hand side of the shaft when the excavation progressed to about 10 meters from the starting side. The landslide caused displacement at the shaft opening and change in the supports. As a result of the re-investigation, it was confirmed that the slide face went through the tunnel cross section. The measures taken were removal of the upper soil and an adoption of the all ground fastening (AGF) method (injection type long tip fastening method) as an auxiliary construction to stop loosening of the natural ground associated with the tunnel excavation. The result was a completion of tunneling the landsliding zone without a problem. This paper reports the AGF method adopted in the above construction, together with the construction works and natural ground conditions. The AGF method is about the same as the pipe roof method with regard to the natural ground accepting mechanism and the materials used. The difference is building an improved body in a limited area in the natural ground around the steel pipes by injecting the fixing material. The use of this method caused no problems in subsidence and displacement in the surrounding ground, and completed the tunneling construction without an unusual event. 1 ref., 7 figs., 2 tabs.

  11. Mechanistic analysis of temperature-dependent current conduction through thin tunnel oxide in n+-polySi/SiO2/n+-Si structures

    Science.gov (United States)

    Samanta, Piyas

    2017-09-01

    We present a detailed investigation on temperature-dependent current conduction through thin tunnel oxides grown on degenerately doped n-type silicon (n+-Si) under positive bias ( VG ) on heavily doped n-type polycrystalline silicon (n+-polySi) gate in metal-oxide-semiconductor devices. The leakage current measured between 298 and 573 K and at oxide fields ranging from 6 to 10 MV/cm is primarily attributed to Poole-Frenkel (PF) emission of trapped electrons from the neutral electron traps located in the silicon dioxide (SiO2) band gap in addition to Fowler-Nordheim (FN) tunneling of electrons from n+-Si acting as the drain node in FLOating gate Tunnel OXide Electrically Erasable Programmable Read-Only Memory devices. Process-induced neutral electron traps are located at 0.18 eV and 0.9 eV below the SiO2 conduction band. Throughout the temperature range studied here, PF emission current IPF dominates FN electron tunneling current IFN at oxide electric fields Eox between 6 and 10 MV/cm. A physics based new analytical formula has been developed for FN tunneling of electrons from the accumulation layer of degenerate semiconductors at a wide range of temperatures incorporating the image force barrier rounding effect. FN tunneling has been formulated in the framework of Wentzel-Kramers-Brilloiun taking into account the correction factor due to abrupt variation of the energy barrier at the cathode/oxide interface. The effect of interfacial and near-interfacial trapped-oxide charges on FN tunneling has also been investigated in detail at positive VG . The mechanism of leakage current conduction through SiO2 films plays a crucial role in simulation of time-dependent dielectric breakdown of the memory devices and to precisely predict the normal operating field or applied floating gate (FG) voltage for lifetime projection of the devices. In addition, we present theoretical results showing the effect of drain doping concentration on the FG leakage current.

  12. Investigations of Tunneling for Field Effect Transistors

    OpenAIRE

    Matheu, Peter

    2012-01-01

    Over 40 years of scaling dimensions for new and continuing product cycles has introduced new challenges for transistor design. As the end of the technology roadmap for semiconductors approaches, new device structures are being investigated as possible replacements for traditional metal-oxide-semiconductor field effect transistors (MOSFETs). Band-to-band tunneling (BTBT) in semiconductors, often viewed as an adverse effect of short channel lengths in MOSFETs, has been discussed as a promising ...

  13. Tunneling magnetoresistance in granular cermet films with particle size distribution

    International Nuclear Information System (INIS)

    Vovk, A.Ya.; Golub, V.O.; Malkinski, L.; Kravets, A.F.; Pogorily, A.M.; Shypil', O.V.

    2004-01-01

    The correlation between tunneling magnetoresistance (TMR) and field sensitivity (dMR/dH) for granular films (Co 50 Fe 50 ) x -(Al 2 O 3 ) 1-x was studied. The position of TMR maximum is shifted towards the lower x in the higher applied magnetic fields. Such a behavior was observed for metal granular nanocomposites but is first reported for granular cermets. However the highest dMR/dH was found for the compositions just below the percolation threshold

  14. Commendable surface physics by means of scanning tunneling microscopy

    International Nuclear Information System (INIS)

    Besenbacher, F.; Laegsgaard, E.; Stensgard, I.

    1995-01-01

    The scanning tunneling microscope, developed at the Aarhus University (Denmark) allows taking several STM images per second, as opposite to other similar microscopes, where the typical scanning time is 0,5-1 min. This new system enables collecting of important information concerning dynamic processes on the surfaces. The Aarhus microscope is very stable, hence atomic resolution is achievable even on close-packed metallic surfaces, while it is difficult to achieve by means of the conventional STM. (EG)

  15. Scanning tunneling spectroscopy of Pb thin films

    Energy Technology Data Exchange (ETDEWEB)

    Becker, Michael

    2010-12-13

    The present thesis deals with the electronic structure, work function and single-atom contact conductance of Pb thin films, investigated with a low-temperature scanning tunneling microscope. The electronic structure of Pb(111) thin films on Ag(111) surfaces is investigated using scanning tunneling spectroscopy (STS). Quantum size effects, in particular, quantum well states (QWSs), play a crucial role in the electronic and physical properties of these films. Quantitative analysis of the spectra yields the QWS energies as a function of film thickness, the Pb bulk-band dispersion in {gamma}-L direction, scattering phase shifts at the Pb/Ag interface and vacuum barrier as well as the lifetime broadening at anti {gamma}. The work function {phi} is an important property of surfaces, which influences catalytic reactivity and charge injection at interfaces. It controls the availability of charge carriers in front of a surface. Modifying {phi} has been achieved by deposition of metals and molecules. For investigating {phi} at the atomic scale, scanning tunneling microscopy (STM) has become a widely used technique. STM measures an apparent barrier height {phi}{sub a}, which is commonly related to the sample work function {phi}{sub s} by: {phi}{sub a}=({phi}{sub s}+{phi}{sub t}- vertical stroke eV vertical stroke)/2, with {phi}{sub t} the work function of the tunneling tip, V the applied tunneling bias voltage, and -e the electron charge. Hence, the effect of the finite voltage in STM on {phi}{sub a} is assumed to be linear and the comparison of {phi}{sub a} measured at different surface sites is assumed to yield quantitative information about work function differences. Here, the dependence of {phi}{sub a} on the Pb film thickness and applied bias voltage V is investigated. {phi}{sub a} is found to vary significantly with V. This bias dependence leads to drastic changes and even inversion of contrast in spatial maps of {phi}{sub a}, which are related to the QWSs in the Pb

  16. FUNDAMENTAL TUNNELING PROCESSES IN MOSa SOLAR CELLS

    OpenAIRE

    Balberg , I.; Hanak , J.; Weakliem , H.; Gal , E.

    1981-01-01

    In previous studies of tunneling through a MOSa tunnel junction, where Sa was a-Si : H, it was shown that their characteristics resemble those of MOSc devices where Sc was crystalline silicon. In the present work we would like to report a demonstration of fundamental tunneling processes in such tunnel junctions. In particular, the transition from semiconductor controlled regime to tunneling controlled regime can be clearly distinguished. The present results represent one of the rare cases whe...

  17. Destructive quantum interference in spin tunneling problems

    OpenAIRE

    von Delft, Jan; Henley, Christopher L.

    1992-01-01

    In some spin tunneling problems, there are several different but symmetry-related tunneling paths that connect the same initial and final configurations. The topological phase factors of the corresponding tunneling amplitudes can lead to destructive interference between the different paths, so that the total tunneling amplitude is zero. In the study of tunneling between different ground state configurations of the Kagom\\'{e}-lattice quantum Heisenberg antiferromagnet, this occurs when the spi...

  18. 13th Australian tunnelling conference. Proceedings

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2008-07-01

    The theme of the conference was 'Engineering in a changing environment'. Topics covered include Australian tunnelling projects, design and development of ground support, tunnelling, international projects, fire and life safety, mining projects, risk management in tunnelling, and tunnel boring machine tunnelling. Papers of particular interest to the coal industry are: improving roadway development in underground coal mine (G. Lewis and G. Gibson), and polymer-based alternative to steel mesh for coal mine strata reinforcement (C. Lukey and others).

  19. Tunable spin-tunnel contacts to silicon using low-work-function ferromagnets

    Science.gov (United States)

    Min, Byoung-Chul; Motohashi, Kazunari; Lodder, Cock; Jansen, Ron

    2006-10-01

    Magnetic tunnel junctions have become ubiquitous components appearing in magnetic random-access memory, read heads of magnetic disk drives and semiconductor-based spin devices. Inserting a tunnel barrier has been key to achieving spin injection from ferromagnetic (FM) metals into GaAs, but spin injection into Si has remained elusive. We show that Schottky barrier formation leads to a huge conductivity mismatch of the FM tunnel contact and Si, which cannot be solved by the well-known method of adjusting the tunnel barrier thickness. We present a radically different approach for spin-tunnelling resistance control using low-work-function ferromagnets, inserted at the FM/tunnel barrier interface. We demonstrate that in this way the resistance-area (RA) product of FM/Al2O3/Si contacts can be tuned over eight orders of magnitude, while simultaneously maintaining a reasonable tunnel spin polarization. This raises prospects for Si-based spintronics and presents a new category of ferromagnetic materials for spin-tunnel contacts in low-RA-product applications.

  20. Tunnelling instability via perturbation theory

    Energy Technology Data Exchange (ETDEWEB)

    Graffi, S. (Bologna Univ. (Italy). Dip. di Matematica); Grecchi, V. (Moderna Univ. (Italy). Dip. di Matematica); Jona-Lasinio, G. (Paris-11 Univ., 91 - Orsay (France). Lab. de Physique Theorique et Hautes Energies)

    1984-10-21

    The semiclassical limit of low lying states in a multiwell potential is studied by rigorous perturbative techniques. In particular tunnelling instability and localisation of wave functions is obtained in a simple way under small deformations of symmetric potentials.

  1. Scanning Tunneling Microscopy - image interpretation

    International Nuclear Information System (INIS)

    Maca, F.

    1998-01-01

    The basic ideas of image interpretation in Scanning Tunneling Microscopy are presented using simple quantum-mechanical models and supplied with examples of successful application. The importance is stressed of a correct interpretation of this brilliant experimental surface technique

  2. Electron tunneling in proteins program.

    Science.gov (United States)

    Hagras, Muhammad A; Stuchebrukhov, Alexei A

    2016-06-05

    We developed a unique integrated software package (called Electron Tunneling in Proteins Program or ETP) which provides an environment with different capabilities such as tunneling current calculation, semi-empirical quantum mechanical calculation, and molecular modeling simulation for calculation and analysis of electron transfer reactions in proteins. ETP program is developed as a cross-platform client-server program in which all the different calculations are conducted at the server side while only the client terminal displays the resulting calculation outputs in the different supported representations. ETP program is integrated with a set of well-known computational software packages including Gaussian, BALLVIEW, Dowser, pKip, and APBS. In addition, ETP program supports various visualization methods for the tunneling calculation results that assist in a more comprehensive understanding of the tunneling process. © 2016 Wiley Periodicals, Inc. © 2016 Wiley Periodicals, Inc.

  3. Tunneling Plasmonics in Bilayer Graphene.

    Science.gov (United States)

    Fei, Z; Iwinski, E G; Ni, G X; Zhang, L M; Bao, W; Rodin, A S; Lee, Y; Wagner, M; Liu, M K; Dai, S; Goldflam, M D; Thiemens, M; Keilmann, F; Lau, C N; Castro-Neto, A H; Fogler, M M; Basov, D N

    2015-08-12

    We report experimental signatures of plasmonic effects due to electron tunneling between adjacent graphene layers. At subnanometer separation, such layers can form either a strongly coupled bilayer graphene with a Bernal stacking or a weakly coupled double-layer graphene with a random stacking order. Effects due to interlayer tunneling dominate in the former case but are negligible in the latter. We found through infrared nanoimaging that bilayer graphene supports plasmons with a higher degree of confinement compared to single- and double-layer graphene, a direct consequence of interlayer tunneling. Moreover, we were able to shut off plasmons in bilayer graphene through gating within a wide voltage range. Theoretical modeling indicates that such a plasmon-off region is directly linked to a gapped insulating state of bilayer graphene, yet another implication of interlayer tunneling. Our work uncovers essential plasmonic properties in bilayer graphene and suggests a possibility to achieve novel plasmonic functionalities in graphene few-layers.

  4. Shaft and tunnel sealing considerations

    International Nuclear Information System (INIS)

    Kelsall, P.C.; Shukla, D.K.

    1980-01-01

    Much of the emphasis of previous repository sealing research has been placed on plugging small diameter boreholes. It is increasingly evident that equal emphasis should now be given to shafts and tunnels which constitute more significant pathways between a repository and the biosphere. The paper discusses differences in requirements for sealing shafts and tunnels as compared with boreholes and the implications for seal design. Consideration is given to a design approach for shaft and tunnel seals based on a multiple component design concept, taking into account the requirements for retrievability of the waste. A work plan is developed for the future studies required to advance shaft and tunnel sealing technology to a level comparable with the existing technology for borehole sealing

  5. Organic tunnel field effect transistors

    KAUST Repository

    Tietze, Max Lutz; Lussem, Bjorn; Liu, Shiyi

    2017-01-01

    Various examples are provided for organic tunnel field effect transistors (OTFET), and methods thereof. In one example, an OTFET includes a first intrinsic layer (i-layer) of organic semiconductor material disposed over a gate insulating layer

  6. Bijzondere belastingen in tunnels : Eindrapport

    NARCIS (Netherlands)

    Molenaar, D.J.; Weerheijm, J.; Vervuurt, A.; Burggraaf, H.; Roekaerts, D.; Meijers, P.

    2009-01-01

    Verkeerstunnels en overkapte wegen (landtunnels) komen de milieukundige en stedenbouwkundige inpassing ten goede en maken meervoudig ruimtegebruik in de stad mogelijk. Het aantal tunnels en overkappingen groeit dan ook. Dit maakt het vervoer van explosiegevaarlijke stoffen en onder hoge druk

  7. Free Surface Water Tunnel (FSWT)

    Data.gov (United States)

    Federal Laboratory Consortium — Description: The Free Surface Water Tunnel consists of the intake plenum, the test section and the exit plenum. The intake plenum starts with a perforated pipe that...

  8. Direct, coherent and incoherent intermediate state tunneling and scanning tunnel microscopy (STM)

    International Nuclear Information System (INIS)

    Halbritter, J.

    1997-01-01

    Theory and experiment in tunneling are still qualitative in nature, which hold true also for the latest developments in direct-, resonant-, coherent- and incoherent-tunneling. Those tunnel processes have recently branched out of the field of ''solid state tunnel junctions'' into the fields of scanning tunnel microscopy (STM), single electron tunneling (SET) and semiconducting resonant tunnel structures (RTS). All these fields have promoted the understanding of tunneling in different ways reaching from the effect of coherence, of incoherence and of charging in tunneling, to spin flip or inelastic effects. STM allows not only the accurate measurements of the tunnel current and its voltage dependence but, more importantly, the easy quantification via the (quantum) tunnel channel conductance and the distance dependence. This new degree of freedom entering exponentially the tunnel current allows an unique identification of individual tunnel channels and their quantification. In STM measurements large tunnel currents are observed for large distances d > 1 nm explainable by intermediate state tunneling. Direct tunneling with its reduced tunnel time and reduced off-site Coulomb charging bridges distances below 1 nm, only. The effective charge transfer process with its larger off-site and on-site charging at intermediate states dominates tunnel transfer in STM, biology and chemistry over distances in the nm-range. Intermediates state tunneling becomes variable range hopping conduction for distances larger than d > 2 nm, for larger densities of intermediate states n 1 (ε) and for larger temperatures T or voltages U, still allowing high resolution imaging

  9. Quantum resonances in physical tunneling

    International Nuclear Information System (INIS)

    Nieto, M.M.; Truax, D.R.

    1985-01-01

    It has recently been emphasized that the probability of quantum tunneling is a critical function of the shape of the potential. Applying this observation to physical systems, we point out that in principal information on potential surfaces can be obtained by studying tunneling rates. This is especially true in cases where only spectral data is known, since many potentials yield the same spectrum. 13 refs., 10 figs., 1 tab

  10. Scanning tunnel microscopy of semiconductor nanostructures

    International Nuclear Information System (INIS)

    Eder, C.

    1997-09-01

    In this work a scanning tunneling microscope (STM) is utilized as a surface sensitive tool for local characterization of internal potential profiles of GaAs/AlGaAs heterostructures. The STM is operated at variable temperatures under ambient conditions, i.e. either in air or in the variable temperature insert of a cryostat. Distinct local differences between current-voltage curves taken on inverted heterostructures, which were patterned by wet chemically etching, are found. The spectroscopic differences can be ascribed to the internal potential profile in the subsurface regions of the sample. Current imaging tunneling spectroscopy (CITS) is applied to study quantum wire regions. It is found that the magnitude of the CITS-current is an indirect measure of edge depletion zones, which are much larger at 4.2 K. Direct measurements of relevant energy levels in quantum structures were obtained by ballistic electron emission microscopy (BEEM). It is shown that this 3-terminal technique is an excellent tool for transport characterization of minibands formed in semiconductor superlattices. Furthermore, low dimensional electron gases are shown to act as very efficient collector electrodes at low temperatures. For the first time, BEEM experiments were performed at 4.2 K. The enhanced thermal resolution at 4.2 K allows an analysis of the relevant scattering processes. It is found that the collector current is strongly influenced by diffusive scattering at the metal/semiconductor interface. (author)

  11. Enabling Advanced Wind-Tunnel Research Methods Using the NASA Langley 12-Foot Low Speed Tunnel

    Science.gov (United States)

    Busan, Ronald C.; Rothhaar, Paul M.; Croom, Mark A.; Murphy, Patrick C.; Grafton, Sue B.; O-Neal, Anthony W.

    2014-01-01

    Design of Experiment (DOE) testing methods were used to gather wind tunnel data characterizing the aerodynamic and propulsion forces and moments acting on a complex vehicle configuration with 10 motor-driven propellers, 9 control surfaces, a tilt wing, and a tilt tail. This paper describes the potential benefits and practical implications of using DOE methods for wind tunnel testing - with an emphasis on describing how it can affect model hardware, facility hardware, and software for control and data acquisition. With up to 23 independent variables (19 model and 2 tunnel) for some vehicle configurations, this recent test also provides an excellent example of using DOE methods to assess critical coupling effects in a reasonable timeframe for complex vehicle configurations. Results for an exploratory test using conventional angle of attack sweeps to assess aerodynamic hysteresis is summarized, and DOE results are presented for an exploratory test used to set the data sampling time for the overall test. DOE results are also shown for one production test characterizing normal force in the Cruise mode for the vehicle.

  12. Tunnelling spectroscopy of BaFe{sub 2}As{sub 2}/Au/PbIn thin film junctions

    Energy Technology Data Exchange (ETDEWEB)

    Doering, Sebastian; Schmidt, Stefan; Schmidl, Frank; Tympel, Volker; Grosse, Veit; Seidel, Paul [Institut fuer Festkoerperphysik, Friedrich-Schiller-Universitaet Jena (Germany); Haindl, Silvia; Iida, Kazumasa; Kurth, Fritz; Holzapfel, Bernhard [IFW Dresden, Institut fuer Metallische Werkstoffe, Dresden (Germany)

    2011-07-01

    Tunnelling spectroscopy is an important tool to investigate the properties of iron-based superconductors. In contrast to commonly used point contact Andreev reflection (PCAR) technique, we fabricated hybrid superconductor / normal metal / superconductor (SNS) thin film structures, with tunable barrier thickness and area. For the base electrode we use Ba(Fe{sub 0.9}Co{sub 0.1}){sub 2}As{sub 2} thin films, produced via pulsed laser deposition (PLD). A gold layer was sputtered to form the barrier, while the counter electrode material is the conventional superconductor PbIn with a T{sub c} of 7.2 K. For temperatures below 7.2 K the spectrum shows a subharmonic gap structure (SGS), described by an extended model of Octavio, Tinkham, Blonder and Klapwijk (OTBK), while at higher temperatures the SGS vanishes and an SN-like behaviour can be observed.

  13. Tunneling current in HfO2 and Hf0.5Zr0.5O2-based ferroelectric tunnel junction

    Science.gov (United States)

    Dong, Zhipeng; Cao, Xi; Wu, Tong; Guo, Jing

    2018-03-01

    Ferroelectric tunnel junctions (FTJs) have been intensively explored for future low power data storage and information processing applications. Among various ferroelectric (FE) materials studied, HfO2 and H0.5Zr0.5O2 (HZO) have the advantage of CMOS process compatibility. The validity of the simple effective mass approximation, for describing the tunneling process in these materials, is examined by computing the complex band structure from ab initio simulations. The results show that the simple effective mass approximation is insufficient to describe the tunneling current in HfO2 and HZO materials, and quantitative accurate descriptions of the complex band structures are indispensable for calculation of the tunneling current. A compact k . p Hamiltonian is parameterized to and validated by ab initio complex band structures, which provides a method for efficiently and accurately computing the tunneling current in HfO2 and HZO. The device characteristics of a metal/FE/metal structure and a metal/FE/semiconductor (M-F-S) structure are investigated by using the non-equilibrium Green's function formalism with the parameterized effective Hamiltonian. The result shows that the M-F-S structure offers a larger resistance window due to an extra barrier in the semiconductor region at off-state. A FTJ utilizing M-F-S structure is beneficial for memory design.

  14. Tunneling magnetoresistance phenomenon utilizing graphene magnet electrode

    International Nuclear Information System (INIS)

    Hashimoto, T.; Kamikawa, S.; Haruyama, J.; Soriano, D.; Pedersen, J. G.; Roche, S.

    2014-01-01

    Using magnetic rare-metals for spintronic devices is facing serious problems for the environmental contamination and the limited material-resource. In contrast, by fabricating ferromagnetic graphene nanopore arrays (FGNPAs) consisting of honeycomb-like array of hexagonal nanopores with hydrogen-terminated zigzag-type atomic structure edges, we reported observation of polarized electron spins spontaneously driven from the pore edge states, resulting in rare-metal-free flat-energy-band ferromagnetism. Here, we demonstrate observation of tunneling magnetoresistance (TMR) behaviors on the junction of cobalt/SiO 2 /FGNPA electrode, serving as a prototype structure for future rare-metal free TMR devices using magnetic graphene electrodes. Gradual change in TMR ratios is observed across zero-magnetic field, arising from specified alignment between pore-edge- and cobalt-spins. The TMR ratios can be controlled by applying back-gate voltage and by modulating interpore distance. Annealing the SiO 2 /FGNPA junction also drastically enhances TMR ratios up to ∼100%

  15. Tunneling magnetoresistance phenomenon utilizing graphene magnet electrode

    Energy Technology Data Exchange (ETDEWEB)

    Hashimoto, T.; Kamikawa, S.; Haruyama, J., E-mail: J-haru@ee.aoyama.ac.jp [Faculty of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Sagamihara, Kanagawa 252-5258 (Japan); Soriano, D. [Institut Català de Nanociència i Nanotecnologia (ICN2), Campus de la UAB, Edifici ICN2, 08193 Bellaterra, Barcelona (Spain); Pedersen, J. G. [Institut Català de Nanociència i Nanotecnologia (ICN2), Campus de la UAB, Edifici ICN2, 08193 Bellaterra, Barcelona (Spain); Department of Micro-and Nanotechnology, DTU Nanotech, Technical University of Denmark, DK-2800 Kongens Lyngby (Denmark); Roche, S. [Institut Català de Nanociència i Nanotecnologia (ICN2), Campus de la UAB, Edifici ICN2, 08193 Bellaterra, Barcelona (Spain); ICREA - Institucio Catalana de Recerca i Estudis Avancats, 08010 Barcelona (Spain)

    2014-11-03

    Using magnetic rare-metals for spintronic devices is facing serious problems for the environmental contamination and the limited material-resource. In contrast, by fabricating ferromagnetic graphene nanopore arrays (FGNPAs) consisting of honeycomb-like array of hexagonal nanopores with hydrogen-terminated zigzag-type atomic structure edges, we reported observation of polarized electron spins spontaneously driven from the pore edge states, resulting in rare-metal-free flat-energy-band ferromagnetism. Here, we demonstrate observation of tunneling magnetoresistance (TMR) behaviors on the junction of cobalt/SiO{sub 2}/FGNPA electrode, serving as a prototype structure for future rare-metal free TMR devices using magnetic graphene electrodes. Gradual change in TMR ratios is observed across zero-magnetic field, arising from specified alignment between pore-edge- and cobalt-spins. The TMR ratios can be controlled by applying back-gate voltage and by modulating interpore distance. Annealing the SiO{sub 2}/FGNPA junction also drastically enhances TMR ratios up to ∼100%.

  16. Imaging by Electrochemical Scanning Tunneling Microscopy and Deconvolution Resolving More Details of Surfaces Nanomorphology

    DEFF Research Database (Denmark)

    Andersen, Jens Enevold Thaulov

    observed in high-resolution images of metallic nanocrystallites may be effectively deconvoluted, as to resolve more details of the crystalline morphology (see figure). Images of surface-crystalline metals indicate that more than a single atomic layer is involved in mediating the tunneling current......Upon imaging, electrochemical scanning tunneling microscopy (ESTM), scanning electrochemical micro-scopy (SECM) and in situ STM resolve information on electronic structures and on surface topography. At very high resolution, imaging processing is required, as to obtain information that relates...... to crystallographic-surface structures. Within the wide range of new technologies, those images surface features, the electrochemical scanning tunneling microscope (ESTM) provides means of atomic resolution where the tip participates actively in the process of imaging. Two metallic surfaces influence ions trapped...

  17. Tunnelling without barriers

    International Nuclear Information System (INIS)

    Lee, K.

    1987-01-01

    The evolution in flat and curved space-time of quantum fields in theories with relative flat potential and its consequences are considered. It is shown that bubble nucleation, a quantum mechanical tunnelling process, may occur in flat space-time, having a bounce solution, even if V(phi) has no barrier. It is shown that bubble nucleation can also occur in curved space-time even though there is no bounce solution in the standard formalism for the bubble nucleation rate in curved space-time. Additionally, bubbles can nucleate during the slow rolling period on the potential in flat and curved space-time, in this case also there is no bounce solution. It is known in the new inflationary scenario that energy density perturbations caused by quantum fluctuations of the scalar field can satisfy the presently observed bounds on density perturbations. Bubble nucleation during the slow rolling period also gives rise to density perturbations. For a model potential density perturbations by bubbles are calculated at the horizon reentering. By applying the bound from the almost isotropic microwave black body radiation on these density perturbations, a constraint on the model potential is obtained. Finally, some further implications on the galaxy formation and applications in more realistic potential are discussed

  18. Scanning Tunneling Optical Resonance Microscopy

    Science.gov (United States)

    Bailey, Sheila; Wilt, Dave; Raffaelle, Ryne; Gennett, Tom; Tin, Padetha; Lau, Janice; Castro, Stephanie; Jenkins, Philip; Scheiman, Dave

    2003-01-01

    Scanning tunneling optical resonance microscopy (STORM) is a method, now undergoing development, for measuring optoelectronic properties of materials and devices on the nanoscale by means of a combination of (1) traditional scanning tunneling microscopy (STM) with (2) tunable laser spectroscopy. In STORM, an STM tip probing a semiconductor is illuminated with modulated light at a wavelength in the visible-to-near-infrared range and the resulting photoenhancement of the tunneling current is measured as a function of the illuminating wavelength. The photoenhancement of tunneling current occurs when the laser photon energy is sufficient to excite charge carriers into the conduction band of the semiconductor. Figure 1 schematically depicts a proposed STORM apparatus. The light for illuminating the semiconductor specimen at the STM would be generated by a ring laser that would be tunable across the wavelength range of interest. The laser beam would be chopped by an achromatic liquid-crystal modulator. A polarization-maintaining optical fiber would couple the light to the tip/sample junction of a commercial STM. An STM can be operated in one of two modes: constant height or constant current. A STORM apparatus would be operated in the constant-current mode, in which the height of the tip relative to the specimen would be varied in order to keep the tunneling current constant. In this mode, a feedback control circuit adjusts the voltage applied to a piezoelectric actuator in the STM that adjusts the height of the STM tip to keep the tunneling current constant. The exponential relationship between the tunneling current and tip-to-sample distance makes it relatively easy to implement this mode of operation. The choice of method by which the photoenhanced portion of the tunneling current would be measured depends on choice of the frequency at which the input illumination would be modulated (chopped). If the frequency of modulation were low enough (typically tunneling current

  19. Electronic noise of superconducting tunnel junction detectors

    International Nuclear Information System (INIS)

    Jochum, J.; Kraus, H.; Gutsche, M.; Kemmather, B.; Feilitzsch, F. v.; Moessbauer, R.L.

    1994-01-01

    The optimal signal to noise ratio for detectors based on superconducting tunnel junctions is calculated and compared for the cases of a detector consisting of one single tunnel junction, as well as of series and of parallel connections of such tunnel junctions. The influence of 1 / f noise and its dependence on the dynamical resistance of tunnel junctions is discussed quantitatively. A single tunnel junction yields the minimum equivalent noise charge. Such a tunnel junction exhibits the best signal to noise ratio if the signal charge is independent of detector size. In case, signal charge increases with detector size, a parallel or a series connection of tunnel junctions would provide the optimum signal to noise ratio. The equivalent noise charge and the respective signal to noise ratio are deduced as functions of tunnel junction parameters such as tunneling time, quasiparticle lifetime, etc. (orig.)

  20. Safety evaluation model of urban cross-river tunnel based on driving simulation.

    Science.gov (United States)

    Ma, Yingqi; Lu, Linjun; Lu, Jian John

    2017-09-01

    Currently, Shanghai urban cross-river tunnels have three principal characteristics: increased traffic, a high accident rate and rapidly developing construction. Because of their complex geographic and hydrological characteristics, the alignment conditions in urban cross-river tunnels are more complicated than in highway tunnels, so a safety evaluation of urban cross-river tunnels is necessary to suggest follow-up construction and changes in operational management. A driving risk index (DRI) for urban cross-river tunnels was proposed in this study. An index system was also constructed, combining eight factors derived from the output of a driving simulator regarding three aspects of risk due to following, lateral accidents and driver workload. Analytic hierarchy process methods and expert marking and normalization processing were applied to construct a mathematical model for the DRI. The driving simulator was used to simulate 12 Shanghai urban cross-river tunnels and a relationship was obtained between the DRI for the tunnels and the corresponding accident rate (AR) via a regression analysis. The regression analysis results showed that the relationship between the DRI and the AR mapped to an exponential function with a high degree of fit. In the absence of detailed accident data, a safety evaluation model based on factors derived from a driving simulation can effectively assess the driving risk in urban cross-river tunnels constructed or in design.

  1. Theory of superconducting tunneling without the tunneling Hamiltonian

    International Nuclear Information System (INIS)

    Arnold, G.B.

    1987-01-01

    When a tunneling barrier is nearly transparent, the standard tunneling (or transfer) Hamiltonian approximation fails. The author describes the theory which is necessary for calculating the tunneling current in these cases, and illustrate it by comparing theory and experiment on superconductor/insulator/superconductor (SIS) junctions have ultra-thin tunnel barriers. This theory accurately explains the subgap structure which appears in the dynamical resistance of such SIS junctions, including many observed details which no previous theory has reproduced. The expression for the current through an SIS junction with an ultrathin barrier is given by I(t) = Re{Sigma/sub n/ J/sub n/ (omega/sub o/)e/sup in omega/o/sup t/} where omega/sub o/ = 2eV/h is the Josephson frequency, V is the bias voltage, and the J/sub n/ are voltage dependent coefficients, one for each positive or negative integer, n, and n=0. The relative sign of the terms involving cos(n omega/sub o/t) and sin(n omega/sub o/t) agrees with experiment, in contrast to previous theories of Josephson tunneling

  2. Improved multidimensional semiclassical tunneling theory.

    Science.gov (United States)

    Wagner, Albert F

    2013-12-12

    We show that the analytic multidimensional semiclassical tunneling formula of Miller et al. [Miller, W. H.; Hernandez, R.; Handy, N. C.; Jayatilaka, D.; Willets, A. Chem. Phys. Lett. 1990, 172, 62] is qualitatively incorrect for deep tunneling at energies well below the top of the barrier. The origin of this deficiency is that the formula uses an effective barrier weakly related to the true energetics but correctly adjusted to reproduce the harmonic description and anharmonic corrections of the reaction path at the saddle point as determined by second order vibrational perturbation theory. We present an analytic improved semiclassical formula that correctly includes energetic information and allows a qualitatively correct representation of deep tunneling. This is done by constructing a three segment composite Eckart potential that is continuous everywhere in both value and derivative. This composite potential has an analytic barrier penetration integral from which the semiclassical action can be derived and then used to define the semiclassical tunneling probability. The middle segment of the composite potential by itself is superior to the original formula of Miller et al. because it incorporates the asymmetry of the reaction barrier produced by the known reaction exoergicity. Comparison of the semiclassical and exact quantum tunneling probability for the pure Eckart potential suggests a simple threshold multiplicative factor to the improved formula to account for quantum effects very near threshold not represented by semiclassical theory. The deep tunneling limitations of the original formula are echoed in semiclassical high-energy descriptions of bound vibrational states perpendicular to the reaction path at the saddle point. However, typically ab initio energetic information is not available to correct it. The Supporting Information contains a Fortran code, test input, and test output that implements the improved semiclassical tunneling formula.

  3. Data analysis strategies for the characterization of normal: superconductor point contacts by barrier strength parameter

    Science.gov (United States)

    Smith, Charles W.; Reinertson, Randal C.; Dolan, P. J., Jr.

    1993-05-01

    The theoretical description by Blonder, Tinkham, and Klapwijk [Phys. Rev. B 25, 4515 (1982)] of the I-V curves of normal: superconductor point contacts encompasses a broad range of experimental behavior, from the tunnel junction case, on the one hand, to the clean metallic microconstriction limit on the other. The theory characterizes point contacts in terms of a single parameter, the barrier strength. The differential conductance of a point contact, at zero bias, as a function of temperature, offers a direct experimental method by which the barrier strength parameter can be evaluated. In view of the full range of phenomena incorporated by this theory, we suggest several different strategies for the evaluation of the barrier strength parameter from data in the low and intermediate barrier strength regimes and for measurements in the low temperature (near T=0 K) and high temperature (near T=Tc) limits.

  4. Theory of spin-dependent tunnelling in magnetic junctions

    International Nuclear Information System (INIS)

    Mathon, J.

    2002-01-01

    Rigorous theory of the tunnelling magnetoresistance (TMR) based on the real-space Kubo formula and fully realistic tight-binding bands fitted to an ab initio band structure is described. It is first applied to calculate the TMR of two Co electrodes separated by a vacuum gap. The calculated TMR ratio reaches ∼65% in the tunnelling regime but can be as high as 280% in the metallic regime when the vacuum gap is of the order of the Co interatomic distance (abrupt domain wall). It is also shown that the spin polarization P of the tunnelling current is negative in the metallic regime but becomes positive P∼35% in the tunnelling regime. Calculation of the TMR of an epitaxial Fe/MgO/Fe(001) junction is also described. The calculated optimistic TMR ratio is in excess of 1000% for an MgO barrier of ∼20 atomic planes and the spin polarization of the tunnelling current is positive for all MgO thicknesses. It is also found that spin-dependent tunnelling in an Fe/MgO/Fe(001) junction is not entirely determined by states at the Γ point (k parallel = 0) even for MgO thicknesses as large as ∼20 atomic planes. Finally, it is demonstrated that the TMR ratio calculated from the Kubo formula remains non-zero when one of the Co electrodes is covered with a copper layer. It is shown that non-zero TMR is due to quantum well states in the Cu layer which do not participate in transport. Since these only occur in the down-spin channel, their loss from transport creates a spin asymmetry of electrons tunnelling from a Cu interlayer, i.e. non-zero TMR. Numerical modelling is used to show that diffuse scattering from a random distribution of impurities in the barrier may cause quantum well states to evolve into propagating states, in which case the spin asymmetry of the non-magnetic layer is lost and with it the TMR. (author)

  5. Aespoe HRL. Experiences of blasting of the TASQ tunnel

    International Nuclear Information System (INIS)

    Olsson, Mats; Niklasson, Bengt; Wilson, Lasse; Andersson, Christer; Christiansson, Rolf

    2004-11-01

    the tunnel wall was roughly 0.2 m. However, longer cracks existed but these cracks probably originate from water filled blast holes. The cracks from the bench were generally much shorter than what is normally achieved during excavation of a horse-shoe shaped tunnel. This may be due to the stress situation under the arched bottom profile, the height requirement on drilling precision also in the floor as well as the low confinement in the arch shaped contour of the floor: Some conclusions from the APSE tunnel: There is a demand for new drilling equipment with a better guidance control to increase the drilling accuracy. Electronic detonators have very good accuracy and a high potential to reduce cracks from blasting. However, they must be more easy to use. It is possible to minimize the damage zone in the floor by using top heading and bench. However, there is a demand for more development in order to minimize the damage zone in the floor without a separate bench. Water in bore holes increases the damage zone in terms of length and frequency of induced fractures. This could be avoided by drilling the holes pointing slightly upwards. The look-out angle and distribution of specific charge along each round causes a discontinuous EDZ along the tunnel. It is therefore indicated that the impact of the EDZ on hydraulic conductivity along the tunnel has very limited impact. During similar conditions is it believed that the extent of the EDZ is manageable through DandB design and QA control during excavation

  6. Aespoe HRL. Experiences of blasting of the TASQ tunnel

    Energy Technology Data Exchange (ETDEWEB)

    Olsson, Mats [Swebrec, Luleaa (Sweden); Niklasson, Bengt [Skanska Teknik, Stockholm (Sweden); Wilson, Lasse [Skanska Stora Projekt, Stockholm (Sweden); Andersson, Christer; Christiansson, Rolf [Swedish Nuclear Fuel and Waste Management Co., Stockholm (Sweden)

    2004-11-01

    length in the tunnel wall was roughly 0.2 m. However, longer cracks existed but these cracks probably originate from water filled blast holes. The cracks from the bench were generally much shorter than what is normally achieved during excavation of a horse-shoe shaped tunnel. This may be due to the stress situation under the arched bottom profile, the height requirement on drilling precision also in the floor as well as the low confinement in the arch shaped contour of the floor: Some conclusions from the APSE tunnel: There is a demand for new drilling equipment with a better guidance control to increase the drilling accuracy. Electronic detonators have very good accuracy and a high potential to reduce cracks from blasting. However, they must be more easy to use. It is possible to minimize the damage zone in the floor by using top heading and bench. However, there is a demand for more development in order to minimize the damage zone in the floor without a separate bench. Water in bore holes increases the damage zone in terms of length and frequency of induced fractures. This could be avoided by drilling the holes pointing slightly upwards. The look-out angle and distribution of specific charge along each round causes a discontinuous EDZ along the tunnel. It is therefore indicated that the impact of the EDZ on hydraulic conductivity along the tunnel has very limited impact. During similar conditions is it believed that the extent of the EDZ is manageable through DandB design and QA control during excavation.

  7. Superconducting tunneling with the tunneling Hamiltonian. II. Subgap harmonic structure

    International Nuclear Information System (INIS)

    Arnold, G.B.

    1987-01-01

    The theory of superconducting tunneling without the tunneling Hamiltonian is extended to treat superconductor/insulator/superconductor junctions in which the transmission coefficient of the insulating barrier approaches unity. The solution for the current in such junctions is obtained by solving the problem of a particle hopping in a one-dimensional lattice of sites, with forward and reverse transfer integrals that depend on the site. The results are applied to the problem of subgap harmonic structure in superconducting tunneling. The time-dependent current at finite voltage through a junction exhibiting subgap structure is found to have terms that oscillate at all integer multiples of the Josephson frequency, n(2eV/h). The amplitudes of these new, and as yet unmeasured, ac current contributions as a function of voltage are predicted

  8. TUNNEL POINT CLOUD FILTERING METHOD BASED ON ELLIPTIC CYLINDRICAL MODEL

    Directory of Open Access Journals (Sweden)

    N. Zhu

    2016-06-01

    Full Text Available The large number of bolts and screws that attached to the subway shield ring plates, along with the great amount of accessories of metal stents and electrical equipments mounted on the tunnel walls, make the laser point cloud data include lots of non-tunnel section points (hereinafter referred to as non-points, therefore affecting the accuracy for modeling and deformation monitoring. This paper proposed a filtering method for the point cloud based on the elliptic cylindrical model. The original laser point cloud data was firstly projected onto a horizontal plane, and a searching algorithm was given to extract the edging points of both sides, which were used further to fit the tunnel central axis. Along the axis the point cloud was segmented regionally, and then fitted as smooth elliptic cylindrical surface by means of iteration. This processing enabled the automatic filtering of those inner wall non-points. Experiments of two groups showed coincident results, that the elliptic cylindrical model based method could effectively filter out the non-points, and meet the accuracy requirements for subway deformation monitoring. The method provides a new mode for the periodic monitoring of tunnel sections all-around deformation in subways routine operation and maintenance.

  9. Typical Underwater Tunnels in the Mainland of China and Related Tunneling Technologies

    Directory of Open Access Journals (Sweden)

    Kairong Hong

    2017-12-01

    Full Text Available In the past decades, many underwater tunnels have been constructed in the mainland of China, and great progress has been made in related tunneling technologies. This paper presents the history and state of the art of underwater tunnels in the mainland of China in terms of shield-bored tunnels, drill-and-blast tunnels, and immersed tunnels. Typical underwater tunnels of these types in the mainland of China are described, along with innovative technologies regarding comprehensive geological prediction, grouting-based consolidation, the design and construction of large cross-sectional tunnels with shallow cover in weak strata, cutting tool replacement under limited drainage and reduced pressure conditions, the detection and treatment of boulders, the construction of underwater tunnels in areas with high seismic intensity, and the treatment of serious sedimentation in a foundation channel of immersed tunnels. Some suggestions are made regarding the three potential great strait-crossing tunnels—the Qiongzhou Strait-Crossing Tunnel, Bohai Strait-Crossing Tunnel, and Taiwan Strait-Crossing Tunnel—and issues related to these great strait-crossing tunnels that need further study are proposed. Keywords: Underwater tunnel, Strait-crossing tunnel, Shield-bored tunnel, Immersed tunnel, Drill and blast

  10. Extension of Seismic Scanning Tunneling Macroscope to Elastic Waves

    KAUST Repository

    Tarhini, Ahmad

    2017-11-06

    The theory for the seismic scanning tunneling macroscope is extended from acoustic body waves to elastic body-wave propagation. We show that, similar to the acoustic case, near-field superresolution imaging from elastic body waves results from the O(1/R) term, where R is the distance between the source and near-field scatterer. The higher-order contributions R−n for n>1 are cancelled in the near-field region for a point source with normal stress.

  11. Extension of Seismic Scanning Tunneling Macroscope to Elastic Waves

    KAUST Repository

    Tarhini, Ahmad; Guo, Bowen; Dutta, Gaurav; Schuster, Gerard T.

    2017-01-01

    The theory for the seismic scanning tunneling macroscope is extended from acoustic body waves to elastic body-wave propagation. We show that, similar to the acoustic case, near-field superresolution imaging from elastic body waves results from the O(1/R) term, where R is the distance between the source and near-field scatterer. The higher-order contributions R−n for n>1 are cancelled in the near-field region for a point source with normal stress.

  12. Current noise in tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Frey, Moritz; Grabert, Hermann [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Strasse 3, 79104, Freiburg (Germany)

    2017-06-15

    We study current fluctuations in tunnel junctions driven by a voltage source. The voltage is applied to the tunneling element via an impedance providing an electromagnetic environment of the junction. We use circuit theory to relate the fluctuations of the current flowing in the leads of the junction with the voltage fluctuations generated by the environmental impedance and the fluctuations of the tunneling current. The spectrum of current fluctuations is found to consist of three parts: a term arising from the environmental Johnson-Nyquist noise, a term due to the shot noise of the tunneling current and a third term describing the cross-correlation between these two noise sources. Our phenomenological theory reproduces previous results based on the Hamiltonian model for the dynamical Coulomb blockade and provides a simple understanding of the current fluctuation spectrum in terms of circuit theory and properties of the average current. Specific results are given for a tunnel junction driven through a resonator. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  13. Superconducting tunnel-junction refrigerator

    International Nuclear Information System (INIS)

    Melton, R.G.; Paterson, J.L.; Kaplan, S.B.

    1980-01-01

    The dc current through an S 1 -S 2 tunnel junction, with Δ 2 greater than Δ 1 , when biased with eV 1 +Δ 2 , will lower the energy in S 1 . This energy reduction will be shared by the phonons and electrons. This device is shown to be analogous to a thermoelectric refrigerator with an effective Peltier coefficient π* approx. Δ 1 /e. Tunneling calculations yield the cooling power P/sub c/, the electrical power P/sub e/ supplied by the bias supply, and the cooling efficiency eta=P/sub c//P/sub e/. The maximum cooling power is obtained for eV= +- (Δ 2 -Δ 1 ) and t 1 =T 1 /T/sub c/1 approx. 0.9. Estimates are made of the temperature difference T 2 -T 1 achievable in Al-Pb and Sn-Pb junctions with an Al 2 O 3 tunneling barrier. The performance of this device is shown to yield a maximum cooling efficiency eta approx. = Δ 1 /(Δ 2 -Δ 1 ) which can be compared with that available in an ideal Carnot refrigerator of eta=T 1 /(T 2 -T 1 ). The development of a useful tunnel-junction refrigerator requires a tunneling barrier with an effective thermal conductance per unit area several orders of magnitude less than that provided by the A1 2 O 3 barrier in the Al-Pb and Sn-Pb systems

  14. TunnelVision: LHC Tunnel Photogrammetry System for Structural Monitoring

    CERN Document Server

    Fallas, William

    2014-01-01

    In this document an algorithm to detect deformations in the LHC Tunnel of CERN is presented. It is based on two images, one represents the ideal state of the tunnel and the other one the actual state. To find the differences between both, the algorithm is divided in three steps. First, an image enhancement is applied to make easier the detection. Second, two different approaches to reduce noise are applied to one or both images. And third, it is defined a group of characteristics about the type of deformation desired to detect. Finally, the conclusions show the effectiveness of the algorithm in the experimental results.

  15. Principle plug design for deposition tunnels

    International Nuclear Information System (INIS)

    Haaramo, M.; Lehtonen, A.

    2009-06-01

    This report examines the plug structures to be built in the deposition tunnels of the repository. The deposition tunnels located below the depth of 400 metres have been used as input data. Each plug consists of a massive concrete structure. The planned maximum pressure acting on the plug is 7.5 MPa. It consists of 4.5 MPa of groundwater pressure and 3 MPa of swelling pressure of the backfill. Five different plug types have been examined. Two of them (butt and irregular plug) turned out to be difficult from the point of view of other works in the central and deposition tunnels. One type (straight plug) requires a lot of construction material. Wedge-shaped and dome plugs have been examined more carefully. The wedge shaped plug has advantageous properties in comparison with the dome plug, such as a three dimensional state of stress, the wedging effect which increases strength as pressure increases and larger tolerances for the excavation of the slot. Leakage water has a longer path through the wedge shaped plug than through the dome plug. Pressure load affects the wedge shaped plug, creating normal stresses, which are compressive along each coordinate axis. The long-term rise in temperature in the deposition tunnels can produce high extra stresses in all the plug alternatives. These stresses make it necessary to increase the strength of the concrete or the distance between the plug and the nearest deposition hole. The stability effects of different plug distances and deposition tunnel orientations have been examined. The plug does not significantly affect stresses in the surrounding bedrock or the stability of the bedrock. Stresses caused by excavation and temperature rise are decisive factors. A groundwater chloride content of 0-3% in the environment of the repository is used as input data. It affects the tightness of the concrete and the quality of the cement. Cement has to be sulphate resistant with a low pH value. Low pH results in the weakening of the corrosion

  16. Metal Induced Gap States on Pt/Ge(001)

    NARCIS (Netherlands)

    Oncel, N.; van Beek, W.J.; Poelsema, Bene; Zandvliet, Henricus J.W.

    2007-01-01

    Using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) we have studied the electronic properties of a novel, planar, metal semiconductor contact. For this purpose we take advantage of the unique properties of the Pt-modified Ge(001) surface, which consist of coexisting

  17. Scaling for quantum tunneling current in nano- and subnano-scale plasmonic junctions.

    Science.gov (United States)

    Zhang, Peng

    2015-05-19

    When two conductors are separated by a sufficiently thin insulator, electrical current can flow between them by quantum tunneling. This paper presents a self-consistent model of tunneling current in a nano- and subnano-meter metal-insulator-metal plasmonic junction, by including the effects of space charge and exchange correlation potential. It is found that the J-V curve of the junction may be divided into three regimes: direct tunneling, field emission, and space-charge-limited regime. In general, the space charge inside the insulator reduces current transfer across the junction, whereas the exchange-correlation potential promotes current transfer. It is shown that these effects may modify the current density by orders of magnitude from the widely used Simmons' formula, which is only accurate for a limited parameter space (insulator thickness > 1 nm and barrier height > 3 eV) in the direct tunneling regime. The proposed self-consistent model may provide a more accurate evaluation of the tunneling current in the other regimes. The effects of anode emission and material properties (i.e. work function of the electrodes, electron affinity and permittivity of the insulator) are examined in detail in various regimes. Our simple model and the general scaling for tunneling current may provide insights to new regimes of quantum plasmonics.

  18. Hybrid inflation exit through tunneling

    International Nuclear Information System (INIS)

    Garbrecht, Bjoern; Konstandin, Thomas

    2007-01-01

    For hybrid inflationary potentials, we derive the tunneling rate from field configurations along the flat direction towards the waterfall regime. This process competes with the classically rolling evolution of the scalar fields and needs to be strongly subdominant for phenomenologically viable models. Tunneling may exclude models with a mass scale below 10 12 GeV, but can be suppressed by small values of the coupling constants. We find that tunneling is negligible for those models, which do not require fine tuning in order to cancel radiative corrections, in particular for GUT-scale SUSY inflation. In contrast, electroweak scale hybrid inflation is not viable, unless the inflaton-waterfall field coupling is smaller than approximately 10 -11

  19. Photon-phonon-enhanced infrared rectification in a two-dimensional nanoantenna-coupled tunnel diode

    International Nuclear Information System (INIS)

    Kadlec, Emil A.; Jarecki, Robert L.; Starbuck, Andrew; Peters, David W.; Davids, Paul S.

    2016-01-01

    The interplay of strong infrared photon-phonon coupling with electromagnetic confinement in nanoscale devices is demonstrated to have a large impact on ultrafast photon-assisted tunneling in metal-oxide-semiconductor (MOS) structures. Infrared active optical phonon modes in polar oxides lead to strong dispersion and enhanced electric fields at material interfaces. We find that the infrared dispersion of SiO_2 near a longitudinal optical phonon mode can effectively impedance match a photonic surface mode into a nanoscale tunnel gap that results in large transverse-field confinement. An integrated 2D nanoantenna structure on a distributed large-area MOS tunnel-diode rectifier is designed and built to resonantly excite infrared surface modes and is shown to efficiently channel infrared radiation into nanometer-scale gaps in these MOS devices. This enhanced-gap transverse-electric field is converted to a rectified tunneling displacement current resulting in a dc photocurrent. We examine the angular and polarization-dependent spectral photocurrent response of these 2D nanoantenna-coupled tunnel diodes in the photon-enhanced tunneling spectral region. Lastly, our 2D nanoantenna-coupled infrared tunnel-diode rectifier promises to impact large-area thermal energy harvesting and infrared direct detectors.

  20. From epitaxial growth of ferrite thin films to spin-polarized tunnelling

    International Nuclear Information System (INIS)

    Moussy, Jean-Baptiste

    2013-01-01

    This paper presents a review of the research which is focused on ferrite thin films for spintronics. First, I will describe the potential of ferrite layers for the generation of spin-polarized currents. In the second step, the structural and chemical properties of epitaxial thin films and ferrite-based tunnel junctions will be presented. Particular attention will be given to ferrite systems grown by oxygen-assisted molecular beam epitaxy. The analysis of the structure and chemistry close to the interfaces, a key-point for understanding the spin-polarized tunnelling measurements, will be detailed. In the third part, the magnetic and magneto-transport properties of magnetite (Fe 3 O 4 ) thin films as a function of structural defects such as the antiphase boundaries will be explained. The spin-polarization measurements (spin-resolved photoemission, tunnel magnetoresistance) on this oxide predicted to be half-metallic will be discussed. Fourth, the potential of magnetic tunnel barriers, such as CoFe 2 O 4 , NiFe 2 O 4 or MnFe 2 O 4 , whose insulating behaviour and the high Curie temperatures make it exciting candidates for spin filtering at room temperature will be described. Spin-polarized tunnelling experiments, involving either Meservey–Tedrow or tunnel magnetoresistance measurements, will reveal significant spin-polarizations of the tunnelling current at low temperatures but also at room temperatures. Finally, I will mention a few perspectives with ferrite-based heterostructures. (topical review)

  1. AlGaAs/InGaAlP tunnel junctions for multijunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    SHARPS,P.R.; LI,N.Y.; HILLS,J.S.; HOU,H.; CHANG,PING-CHIH; BACA,ALBERT G.

    2000-05-16

    Optimization of GaInP{sub 2}/GaAs dual and GaInP{sub 2}/GaAs/Ge triple junction cells, and development of future generation monolithic multi-junction cells will involve the development of suitable high bandgap tunnel junctions. There are three criteria that a tunnel junction must meet. First, the resistance of the junction must be kept low enough so that the series resistance of the overall device is not increased. For AMO, 1 sun operation, the tunnel junction resistance should be below 5 x 10{sup {minus}2} {Omega}-cm. Secondly, the peak current density for the tunnel junction must also be larger than the J{sub sc} of the cell so that the tunnel junction I-V curve does not have a deleterious effect on the I-V curve of the multi-junction device. Finally, the tunnel junction must be optically transparent, i.e., there must be a minimum of optical absorption of photons that will be collected by the underlying subcells. The paper reports the investigation of four high bandgap tunnel junctions grown by metal-organic chemical vapor deposition.

  2. Tunneling explains efficient electron transport via protein junctions.

    Science.gov (United States)

    Fereiro, Jerry A; Yu, Xi; Pecht, Israel; Sheves, Mordechai; Cuevas, Juan Carlos; Cahen, David

    2018-05-15

    Metalloproteins, proteins containing a transition metal ion cofactor, are electron transfer agents that perform key functions in cells. Inspired by this fact, electron transport across these proteins has been widely studied in solid-state settings, triggering the interest in examining potential use of proteins as building blocks in bioelectronic devices. Here, we report results of low-temperature (10 K) electron transport measurements via monolayer junctions based on the blue copper protein azurin (Az), which strongly suggest quantum tunneling of electrons as the dominant charge transport mechanism. Specifically, we show that, weakening the protein-electrode coupling by introducing a spacer, one can switch the electron transport from off-resonant to resonant tunneling. This is a consequence of reducing the electrode's perturbation of the Cu(II)-localized electronic state, a pattern that has not been observed before in protein-based junctions. Moreover, we identify vibronic features of the Cu(II) coordination sphere in transport characteristics that show directly the active role of the metal ion in resonance tunneling. Our results illustrate how quantum mechanical effects may dominate electron transport via protein-based junctions.

  3. SPATIAL REPARTITION OF CURRENT FLUCTUATIONS IN A SCANNING TUNNELING MICROSCOPE

    Directory of Open Access Journals (Sweden)

    Jerome Lagoute

    2011-05-01

    Full Text Available Scanning Tunneling Microscopy (STM is a technique where the surface topography of a conducting sample is probed by a scanning metallic tip. The tip-to-surface distance is controlled by monitoring the electronic tunneling current between the two metals. The aim of this work is to extend the temporal range of this instrument by characterising the time fluctuations of this current on different surfaces. The current noise power spectral density is dominated by a characteristic 1/f component, the physical origin of which is not yet clearly identified, despite a number of investigations. A new I-V preamplifier was developed in order to characterise these fluctuations of the tunnelling current and to obtain images of their spatial repartition. It is observed that their intensity is correlated with some topographical features. This information can be used to get insights on the physical phenomena involved that are not accessible by the usual STM set-up, which is limited to low frequencies.

  4. Quantum mechanical tunneling in chemical physics

    CERN Document Server

    Nakamura, Hiroki

    2016-01-01

    Quantum mechanical tunneling plays important roles in a wide range of natural sciences, from nuclear and solid-state physics to proton transfer and chemical reactions in chemistry and biology. Responding to the need for further understanding of multidimensional tunneling, the authors have recently developed practical methods that can be applied to multidimensional systems. Quantum Mechanical Tunneling in Chemical Physics presents basic theories, as well as original ones developed by the authors. It also provides methodologies and numerical applications to real molecular systems. The book offers information so readers can understand the basic concepts and dynamics of multidimensional tunneling phenomena and use the described methods for various molecular spectroscopy and chemical dynamics problems. The text focuses on three tunneling phenomena: (1) energy splitting, or tunneling splitting, in symmetric double well potential, (2) decay of metastable state through tunneling, and (3) tunneling effects in chemical...

  5. Tunnel Boring Machine Performance Study. Final Report

    Science.gov (United States)

    1984-06-01

    Full face tunnel boring machine "TBM" performance during the excavation of 6 tunnels in sedimentary rock is considered in terms of utilization, penetration rates and cutter wear. The construction records are analyzed and the results are used to inves...

  6. Spin- and energy-dependent tunneling through a single molecule with intramolecular spatial resolution.

    Science.gov (United States)

    Brede, Jens; Atodiresei, Nicolae; Kuck, Stefan; Lazić, Predrag; Caciuc, Vasile; Morikawa, Yoshitada; Hoffmann, Germar; Blügel, Stefan; Wiesendanger, Roland

    2010-07-23

    We investigate the spin- and energy-dependent tunneling through a single organic molecule (CoPc) adsorbed on a ferromagnetic Fe thin film, spatially resolved by low-temperature spin-polarized scanning tunneling microscopy. Interestingly, the metal ion as well as the organic ligand show a significant spin dependence of tunneling current flow. State-of-the-art ab initio calculations including also van der Waals interactions reveal a strong hybridization of molecular orbitals and substrate 3d states. The molecule is anionic due to a transfer of one electron, resulting in a nonmagnetic (S=0) state. Nevertheless, tunneling through the molecule exhibits a pronounced spin dependence due to spin-split molecule-surface hybrid states.

  7. Ultrafast terahertz control of extreme tunnel currents through single atoms on a silicon surface

    DEFF Research Database (Denmark)

    Jelic, Vedran; Iwaszczuk, Krzysztof; Nguyen, Peter H.

    2017-01-01

    scanning tunnelling microscopy (THz-STM) in ultrahigh vacuum as a new platform for exploring ultrafast non-equilibrium tunnelling dynamics with atomic precision. Extreme terahertz-pulse-driven tunnel currents up to 10(7) times larger than steady-state currents in conventional STM are used to image...... terahertz-induced band bending and non-equilibrium charging of surface states opens new conduction pathways to the bulk, enabling extreme transient tunnel currents to flow between the tip and sample.......Ultrafast control of current on the atomic scale is essential for future innovations in nanoelectronics. Extremely localized transient electric fields on the nanoscale can be achieved by coupling picosecond duration terahertz pulses to metallic nanostructures. Here, we demonstrate terahertz...

  8. Dynamic Tunneling Junctions at the Atomic Intersection of Two Twisted Graphene Edges.

    Science.gov (United States)

    Bellunato, Amedeo; Vrbica, Sasha D; Sabater, Carlos; de Vos, Erik W; Fermin, Remko; Kanneworff, Kirsten N; Galli, Federica; van Ruitenbeek, Jan M; Schneider, Grégory F

    2018-04-11

    The investigation of the transport properties of single molecules by flowing tunneling currents across extremely narrow gaps is relevant for challenges as diverse as the development of molecular electronics and sequencing of DNA. The achievement of well-defined electrode architectures remains a technical challenge, especially due to the necessity of high precision fabrication processes and the chemical instability of most bulk metals. Here, we illustrate a continuously adjustable tunneling junction between the edges of two twisted graphene sheets. The unique property of the graphene electrodes is that the sheets are rigidly supported all the way to the atomic edge. By analyzing the tunneling current characteristics, we also demonstrate that the spacing across the gap junction can be controllably adjusted. Finally, we demonstrate the transition from the tunneling regime to contact and the formation of an atomic-sized junction between the two edges of graphene.

  9. Transit time for resonant tunneling

    International Nuclear Information System (INIS)

    Garcia Calderon, G.; Rubio, A.

    1990-09-01

    This work considers properties of the partial widths in one dimensional elastic resonant tunneling in order to propose a transit-time τ tr = (h/2π)/Γ n T res ) where Γ n is the elastic width and T res the transmission coefficient at resonance energy. This time is interpreted as an average over the resonance energy width. It is shown that the tunneling current density integrated across a sharp resonance is inversely proportional to τ tr . This transit time may be much larger than the values predicted by other definitions. (author). 20 refs

  10. Spin tunnelling in mesoscopic systems

    Science.gov (United States)

    Garg, Anupam

    2001-02-01

    We study spin tunnelling in molecular magnets as an instance of a mesoscopic phenomenon, with special emphasis on the molecule Fe8. We show that the tunnel splitting between various pairs of Zeeman levels in this molecule oscillates as a function of applied magnetic field, vanishing completely at special points in the space of magnetic fields, known as diabolical points. This phenomena is explained in terms of two approaches, one based on spin-coherent-state path integrals, and the other on a generalization of the phase integral (or WKB) method to difference equations. Explicit formulas for the diabolical points are obtained for a model Hamiltonian.

  11. Tunneling field effect transistor technology

    CERN Document Server

    Chan, Mansun

    2016-01-01

    This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency. · Provides comprehensive reference to tunneling field effect transistors (TFETs); · Covers all aspects of TFETs, from device process to modeling and applications; · Enables design of power-efficient integrated circuits, with low power consumption TFETs.

  12. Inelastic scattering in resonant tunneling

    DEFF Research Database (Denmark)

    Wingreen, Ned S.; Jacobsen, Karsten Wedel; Wilkins, John W.

    1989-01-01

    The exact resonant-tunneling transmission probability for an electron interacting with phonons is presented in the limit that the elastic coupling to the leads is independent of energy. The phonons produce transmission sidebands but do not affect the integrated transmission probability or the esc......The exact resonant-tunneling transmission probability for an electron interacting with phonons is presented in the limit that the elastic coupling to the leads is independent of energy. The phonons produce transmission sidebands but do not affect the integrated transmission probability...

  13. Molecular series-tunneling junctions.

    Science.gov (United States)

    Liao, Kung-Ching; Hsu, Liang-Yan; Bowers, Carleen M; Rabitz, Herschel; Whitesides, George M

    2015-05-13

    Charge transport through junctions consisting of insulating molecular units is a quantum phenomenon that cannot be described adequately by classical circuit laws. This paper explores tunneling current densities in self-assembled monolayer (SAM)-based junctions with the structure Ag(TS)/O2C-R1-R2-H//Ga2O3/EGaIn, where Ag(TS) is template-stripped silver and EGaIn is the eutectic alloy of gallium and indium; R1 and R2 refer to two classes of insulating molecular units-(CH2)n and (C6H4)m-that are connected in series and have different tunneling decay constants in the Simmons equation. These junctions can be analyzed as a form of series-tunneling junctions based on the observation that permuting the order of R1 and R2 in the junction does not alter the overall rate of charge transport. By using the Ag/O2C interface, this system decouples the highest occupied molecular orbital (HOMO, which is localized on the carboxylate group) from strong interactions with the R1 and R2 units. The differences in rates of tunneling are thus determined by the electronic structure of the groups R1 and R2; these differences are not influenced by the order of R1 and R2 in the SAM. In an electrical potential model that rationalizes this observation, R1 and R2 contribute independently to the height of the barrier. This model explicitly assumes that contributions to rates of tunneling from the Ag(TS)/O2C and H//Ga2O3 interfaces are constant across the series examined. The current density of these series-tunneling junctions can be described by J(V) = J0(V) exp(-β1d1 - β2d2), where J(V) is the current density (A/cm(2)) at applied voltage V and βi and di are the parameters describing the attenuation of the tunneling current through a rectangular tunneling barrier, with width d and a height related to the attenuation factor β.

  14. Watertightness of concrete tunnel structures

    OpenAIRE

    Glerum, A.

    1982-01-01

    The Netherlands are situated in the delta. of the rivers Rhine, Meuse and Scheldt. Therefore the ground mainly consists.of sediments, such as sand, clay and silt. In certain regions peat layers of varying thickness are found. The high permeability of some of these materials and the fact that the groundwater table is generally only 1 m below ground level, make an adequate watertightness one of the main features of tunnel engineering in the Netherlands. Tunnels in Holland are both of the immers...

  15. Enhanced tunneling through nonstationary barriers

    International Nuclear Information System (INIS)

    Palomares-Baez, J. P.; Rodriguez-Lopez, J. L.; Ivlev, B.

    2007-01-01

    Quantum tunneling through a nonstationary barrier is studied analytically and by a direct numerical solution of Schroedinger equation. Both methods are in agreement and say that the main features of the phenomenon can be described in terms of classical trajectories which are solutions of Newton's equation in complex time. The probability of tunneling is governed by analytical properties of a time-dependent perturbation and the classical trajectory in the plane of complex time. Some preliminary numerical calculations of Euclidean resonance (an easy penetration through a classical nonstationary barrier due to an underbarrier interference) are presented

  16. Drill and blast tunnelling; Konvensjonell drift av tunneler

    Energy Technology Data Exchange (ETDEWEB)

    Roenn, Paal-Egil

    1997-12-31

    This thesis treats drill and blast tunnelling. The rapid technological advance necessitates revised and updated design criteria, quality requirements and quality control. In situ blast experiments were carried out in order to test new methods and improve the basis for calculation and design. The main topics of the experiments were (1) longer rounds and increased drillhole diameter, (2) emulsion slurry as explosives in tunnelling, and (3) electronic detonators in contour blasting. The experiments show that it is technically feasible to blast rounds of up to 8.6 m length. Using current technology, the economical optimum round length is substantially shorter. Dust, low visibility, noise and toxic fumes are occupational environmental strains for the tunnel workers. Several of the environmental factors are strongly influenced by the type of explosives used. For example, emulsion slurry resulted in 4 to 5 times better visibility than Anolit and the concentration of respirable dust and total dust was reduced by 30-50 %. Electronic detonators were tested and found to give a higher percentage of remaining drillholes in the contour than Nonel detonators. The thesis includes a chapter on economic design of hydropower tunnels. 42 refs., 83 figs., 45 tabs.

  17. Spin-dependent tunnelling in magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Tsymbal, Evgeny Y; Mryasov, Oleg N; LeClair, Patrick R

    2003-01-01

    The phenomenon of electron tunnelling has been known since the advent of quantum mechanics, but continues to enrich our understanding of many fields of physics, as well as creating sub-fields on its own. Spin-dependent tunnelling (SDT) in magnetic tunnel junctions (MTJs) has recently aroused enormous interest and has developed in a vigorous field of research. The large tunnelling magnetoresistance (TMR) observed in MTJs garnered much attention due to possible applications in non-volatile random-access memories and next-generation magnetic field sensors. This led to a number of fundamental questions regarding the phenomenon of SDT. In this review article we present an overview of this field of research. We discuss various factors that control the spin polarization and magnetoresistance in MTJs. Starting from early experiments on SDT and their interpretation, we consider thereafter recent experiments and models which highlight the role of the electronic structure of the ferromagnets, the insulating layer, and the ferromagnet/insulator interfaces. We also discuss the role of disorder in the barrier and in the ferromagnetic electrodes and their influence on TMR. (topical review)

  18. Perpendicular magnetic tunnel junction with tunneling magnetoresistance ratio of 64% using MgO (100) barrier layer prepared at room temperature

    International Nuclear Information System (INIS)

    Ohmori, Hideto; Hatori, Tomoya; Nakagawa, Shigeki

    2008-01-01

    MgO (100) textured films can be prepared by reactive facing targets sputtering at room temperature without postdeposition annealing process when they were deposited on (100) oriented Fe buffer layers. This method allows fabrication of perpendicular magnetic tunnel junction (p-MTJ) with MgO (100) tunneling barrier layer and rare-earth transition metal (RE-TM) alloy thin films as perpendicularly magnetized free and pinned layers. The 3-nm-thick MgO tunneling barrier layer in p-MTJ multilayer prepared on glass substrate revealed (100) crystalline orientation. Extraordinary Hall effect measurement clarified that the perpendicular magnetic components of 3-nm-thick Fe buffer layers on the two ends of MgO tunneling barrier layer were increased by exchange coupling with RE-TM alloy layers. The RA of 35 kΩ μm 2 and tunneling magnetoresistance ratio of 64% was observed in the multilayered p-MTJ element by current-in-plane-tunneling

  19. Novel Metals and Metal Complexes as Platforms for Cancer Therapy

    OpenAIRE

    Frezza, Michael; Hindo, Sarmad; Chen, Di; Davenport, Andrew; Schmitt, Sara; Tomco, Dajena; Dou, Q. Ping

    2010-01-01

    Metals are essential cellular components selected by nature to function in several indispensable biochemical processes for living organisms. Metals are endowed with unique characteristics that include redox activity, variable coordination modes, and reactivity towards organic substrates. Due to their reactivity, metals are tightly regulated under normal conditions and aberrant metal ion concentrations are associated with various pathological disorders, including cancer. For these reasons, coo...

  20. Tunneling in BP-MoS2 heterostructure

    Science.gov (United States)

    Liu, Xiaochi; Qu, Deshun; Kim, Changsik; Ahmed, Faisal; Yoo, Won Jong

    Tunnel field effect transistor (TFET) is considered to be a leading option for achieving SS mV/dec. In this work, black phosphorus (BP) and molybdenum disulfide (MoS2) heterojunction devices are fabricated. We find that thin BP flake and MoS2 form normal p-n junctions, tunneling phenomena can be observed when BP thickness increases to certain level. PEO:CsClO4 is applied on the surface of the device together with a side gate electrode patterned together with source and drain electrodes. The Fermi level of MoS2 on top of BP layer can be modulated by the side gating, and this enables to vary the MoS2-BP tunnel diode property from off-state to on-state. Since tunneling is the working mechanism of MoS2-BP junction, and PEO:CsClO4\\ possesses ultra high dielectric constant and small equivalent oxide thickness (EOT), a low SS of 55 mV/dec is obtained from MoS2-BP TFET. This work was supported by the Global Research Laboratory and Global Frontier R&D Programs at the Center for Hybrid Interface Materials, both funded by the Ministry of Science, ICT & Future Planning via the National Research Foundation of Korea (NRF).

  1. Characterization of magnetic tunnel junction test pads

    DEFF Research Database (Denmark)

    Østerberg, Frederik Westergaard; Kjær, Daniel; Nielsen, Peter Folmer

    2015-01-01

    We show experimentally as well as theoretically that patterned magnetic tunnel junctions can be characterized using the current-in-plane tunneling (CIPT) method, and the key parameters, the resistance-area product (RA) and the tunnel magnetoresistance (TMR), can be determined. The CIPT method...

  2. Tunnel Face Stability & New CPT Applications

    NARCIS (Netherlands)

    Broere, W.

    2001-01-01

    Nearly all tunnels bored in soft soils have encountered problems with the stability of the tunnel face. In several cases these problems led to an extended stand-still of the boring process. A better understanding of the face stability, and of the soil conditions around the tunnel boring machine, can

  3. Enhancement of tunneling current in phosphorene tunnel field effect transistors by surface defects.

    Science.gov (United States)

    Lu, Juan; Fan, Zhi-Qiang; Gong, Jian; Chen, Jie-Zhi; ManduLa, Huhe; Zhang, Yan-Yang; Yang, Shen-Yuan; Jiang, Xiang-Wei

    2018-02-21

    The effects of the staggered double vacancies, hydrogen (H), 3d transition metals, for example cobalt, and semiconductor covalent atoms, for example, germanium, nitrogen, phosphorus (P) and silicon adsorption on the transport properties of monolayer phosphorene were studied using density functional theory and non-equilibrium Green's function formalism. It was observed that the performance of the phosphorene tunnel field effect transistors (TFETs) with an 8.8 nm scaling channel length could be improved most effectively, if the adatoms or vacancies were introduced at the source channel interface. For H and P doped devices, the upper limit of on-state currents of phosphorene TFETs were able to be quickly increased to 2465 μA μm -1 and 1652 μA μm -1 , respectively, which not only outperformed the pristine sample, but also met the requirements for high performance logic applications for the next decade in the International Technology Roadmap for Semiconductors (ITRS). It was proved that the defect-induced band gap states make the effective tunneling path between the conduction band (CB) and valence band (VB) much shorter, so that the carriers can be injected easily from the left electrode, then transfer to the channel. In this regard, the tunneling properties of phosphorene TFETs can be manipulated using surface defects. In addition, the effects of spin polarization on the transport properties of doped phosphorene TFETs were also rigorously considered, H and P doped TFETs could achieve a high ON current of 1795 μA μm -1 and 1368 μA μm -1 , respectively, which is closer to realistic nanodevices.

  4. Bias temperature instability in tunnel field-effect transistors

    Science.gov (United States)

    Mizubayashi, Wataru; Mori, Takahiro; Fukuda, Koichi; Ishikawa, Yuki; Morita, Yukinori; Migita, Shinji; Ota, Hiroyuki; Liu, Yongxun; O'uchi, Shinichi; Tsukada, Junichi; Yamauchi, Hiromi; Matsukawa, Takashi; Masahara, Meishoku; Endo, Kazuhiko

    2017-04-01

    We systematically investigated the bias temperature instability (BTI) of tunnel field-effect transistors (TFETs). The positive BTI and negative BTI mechanisms in TFETs are the same as those in metal-oxide-semiconductor FETs (MOSFETs). In TFETs, although traps are generated in high-k gate dielectrics by the bias stress and/or the interface state is degraded at the interfacial layer/channel interface, the threshold voltage (V th) shift due to BTI degradation is caused by the traps and/or the degradation of the interface state locating the band-to-band tunneling (BTBT) region near the source/gate edge. The BTI lifetime in n- and p-type TFETs is improved by applying a drain bias corresponding to the operation conditions.

  5. Inelastic tunneling spectroscopy for magnetic atoms and the Kondo resonance

    International Nuclear Information System (INIS)

    Goldberg, E C; Flores, F

    2013-01-01

    The interaction between a single magnetic atom and the metal environment (including a magnetic field) is analyzed by introducing an ionic Hamiltonian combined with an effective crystal-field term, and by using a Green-function equation of motion method. This approach describes the inelastic electron tunneling spectroscopy and the Kondo resonances as due to atomic spin fluctuations associated with electron co-tunneling processes between the leads and the atom. We analyze in the case of Fe on CuN the possible spin fluctuations between states with S = 2 and 3/2 or 5/2 and conclude that the experimentally found asymmetries in the conductance with respect to the applied bias, and its marked structures, are well explained by the 2↔3/2 spin fluctuations. The case of Co is also considered and shown to present, in contrast with Fe, a resonance at the Fermi energy corresponding to a Kondo temperature of 6 K. (paper)

  6. Tunneling into quantum wires: regularization of the tunneling Hamiltonian and consistency between free and bosonized fermions

    OpenAIRE

    Filippone, Michele; Brouwer, Piet

    2016-01-01

    Tunneling between a point contact and a one-dimensional wire is usually described with the help of a tunneling Hamiltonian that contains a delta function in position space. Whereas the leading order contribution to the tunneling current is independent of the way this delta function is regularized, higher-order corrections with respect to the tunneling amplitude are known to depend on the regularization. Instead of regularizing the delta function in the tunneling Hamiltonian, one may also obta...

  7. Rare earth elements, U and Th in tunnel dusts of SÃO Paulo City, Brazil

    Energy Technology Data Exchange (ETDEWEB)

    Nory, Renata M.; Figueireido, Ana Maria G., E-mail: renata.nory@ipen.br, E-mail: anamaria@ipen.br [Instituto de Pesquisas Energéticas e Nucleares (IPEN/CNEN-SP), São Paulo, SP (Brazil)

    2017-07-01

    São Paulo is one of the most populated cities in the world, with about 20 million inhabitants in its metropolitan area, more than 12 million motor vehicles and intense industrial activity. Given its importance as a major urban center in South America and the lack of information concerning urban dust composition, the present study aimed to determine rare earth elements (REEs), U and Th mass fractions in tunnel dust, collected in the Jânio Quadros Tunnel, and to assess their possible sources. The study of REEs distribution in urban environments has become of interest over the last decades, due to the increasing industrial use of these elements. The REEs, that are as common as the most familiar metals, are found in metallurgical additives, fluid cracking catalysts and automobile converter catalysts, among other applications. In this study, which employed Instrumental Neutron Activation Analysis (INAA) as analytical technique, the mass fractions of eight REEs were determined and normalized to the chondrite concentration values. The results showed that major concentrations were found for light REEs, following the sequence Ce > La > Nd > Sm > Yb > Eu > Tb > Lu. The pattern of the results pointed to a natural origin for these elements. Regarding U and Th concentrations, the results varied between 1.0 - 9.4 μg g{sup -1} and 3.3 - 35.9 μg g{sup -1}, respectively. Since there is almost no information about the concentration of these elements in this kind of matrix in São Paulo city, these data are important to support further investigations. (author)

  8. Mode-specific tunneling using the Qim path: theory and an application to full-dimensional malonaldehyde.

    Science.gov (United States)

    Wang, Yimin; Bowman, Joel M

    2013-10-21

    We present a theory of mode-specific tunneling that makes use of the general tunneling path along the imaginary-frequency normal mode of the saddle point, Qim, and the associated relaxed potential, V(Qim) [Y. Wang and J. M. Bowman, J. Chem. Phys. 129, 121103 (2008)]. The novel aspect of the theory is the projection of the normal modes of a minimum onto the Qim path and the determination of turning points on V(Qim). From that projection, the change in tunneling upon mode excitation can be calculated. If the projection is zero, no enhancement of tunneling is predicted. In that case vibrationally adiabatic (VA) theory could apply. However, if the projection is large then VA theory is not applicable. The approach is applied to mode-specific tunneling in full-dimensional malonaldehyde, using an accurate full-dimensional potential energy surface. Results are in semi-quantitative agreement with experiment for modes that show large enhancement of the tunneling, relative to the ground state tunneling splitting. For the six out-of-plane modes, which have zero projection on the planar Qim path, VA theory does apply, and results from that theory agree qualitatively and even semi-quantitatively with experiment. We also verify the failure of simple VA theory for modes that show large enhancement of tunneling.

  9. Earth Pressure on Tunnel Crown

    DEFF Research Database (Denmark)

    Andersen, Lars

    Two different analyses have been carried out in order to find the vertical earth pressure, or overburden pressure, at the crown of a tunnel going through a dike. Firstly, a hand calculation is performed using a simple dispersion of the stresses over depth. Secondly, the finite‐element program...

  10. Introduction to scanning tunneling microscopy

    CERN Document Server

    Chen, C Julian

    2008-01-01

    The scanning tunneling and the atomic force microscope, both capable of imaging individual atoms, were crowned with the Physics Nobel Prize in 1986, and are the cornerstones of nanotechnology today. This is a thoroughly updated version of this 'bible' in the field.

  11. Installation in the SPS tunnel

    CERN Multimedia

    1974-01-01

    The SPS tunnel is 6910 m in circumference and has a cross section of 4 m inner diameter. It is situated at an elevation of 400 m above sea level at a depth below the surface varying between 23 and 65 m. Its walls are lined with a concrete shell of about 30 cm thickness. See also 7410043X

  12. Principles of electron tunneling spectroscopy

    CERN Document Server

    Wolf, E L

    2012-01-01

    Electron tunnelling spectroscopy as a research tool has strongly advanced understanding of superconductivity. This book explains the physics and instrumentation behind the advances illustrated in beautiful images of atoms, rings of atoms and exotic states in high temperature superconductors, and summarizes the state of knowledge that has resulted.

  13. Time tunnels meet warped passages

    CERN Multimedia

    Kushner, David

    2006-01-01

    "Just in time for its 40th anniversary, the classic sci-fi television show "The time tunnel" is out on DVD. The conceit is something every engineer can relate to: a pulled plug. Scientists in an underground lab are working on a secret government experiment in time travel. (1 page)

  14. Zero energy Tunnel-concept

    NARCIS (Netherlands)

    Dzhusupova, R.

    2012-01-01

    Creating a zero energy environment is a hot topic. The developments in this field are based on the concept of the "Trias Energetica": reducing energy consumption, using renewable energy sources, and efficiently using fossil fuels. A zero energy concept can also be applied to road tunnels to improve

  15. Travelling inside the SPS tunnel

    CERN Multimedia

    1974-01-01

    The golf cart proved to be a very useful form of transport around the 7 km circumference of the machine. It could carry four passengers and pull light equipment in its trailer. Here Peter Zettwoch is the driver along a mock-up tunnel for installation tests. (see photo 7401011X and Photo Archive 7401018)

  16. A Seamless Ubiquitous Telehealthcare Tunnel

    Directory of Open Access Journals (Sweden)

    Sao-Jie Chen

    2013-08-01

    Full Text Available Mobile handheld devices are rapidly using to implement healthcare services around the World. Fundamentally, these services utilize telemedicine technologies. A disconnection of a mobile telemedicine system usually results in an interruption, which is embarrassing, and reconnection is necessary during the communication session. In this study, the Stream Control Transmission Protocol (SCTP is adopted to build a stable session tunnel to guarantee seamless switching among heterogeneous wireless communication standards, such as Wi-Fi and 3G. This arrangement means that the telemedicine devices will not be limited by a fixed wireless connection and can switch to a better wireless channel if necessary. The tunnel can transmit plain text, binary data, and video streams. According to the evaluation of the proposed software-based SCTP-Tunnel middleware shown, the performance is lower than anticipated and is slightly slower than a fixed connection. However, the transmission throughput is still acceptable for healthcare professionals in a healthcare enterprise or home care site. It is necessary to build more heterogeneous wireless protocols into the proposed tunnel-switching scheme to support all possible communication protocols. In addition, SCTP is another good choice for promoting communication in telemedicine and healthcare fields.

  17. Tunnel Vision in Environmental Management.

    Science.gov (United States)

    Miller, Alan

    1982-01-01

    Discusses problem-solving styles in environmental management and the specific deficiencies in these styles that might be grouped under the label "tunnel vision," a form of selective attention contributing to inadequate problem-formulation, partial solutions to complex problems, and generation of additional problems. Includes educational…

  18. Management of Carpal Tunnel Syndrome.

    Science.gov (United States)

    Mooar, Pekka A; Doherty, William J; Murray, Jayson N; Pezold, Ryan; Sevarino, Kaitlyn S

    2018-03-15

    The American Academy of Orthopaedic Surgeons (AAOS) has developed Appropriate Use Criteria (AUC) for Management of Carpal Tunnel Syndrome. Evidence-based information, in conjunction with the clinical expertise of physicians, was used to develop the criteria to improve patient care and obtain best outcomes while considering the subtleties and distinctions necessary in making clinical decisions. To provide the evidence foundation for this AUC, the AAOS Evidence-Based Medicine Unit provided the writing panel and voting panel with the 2016 AAOS Clinical Practice Guideline titled Management of Carpal Tunnel Syndrome Evidence-Based Clinical Practice Guideline. The Management of Carpal Tunnel Syndrome AUC clinical patient scenarios were derived from indications typical of patients with suspected carpal tunnel syndrome in clinical practice, as well as from current evidence-based clinical practice guidelines and supporting literature to identify the appropriateness of treatments. The 135 patient scenarios and 6 treatments were developed by the writing panel, a group of clinicians who are specialists in this AUC topic. Next, a separate, multidisciplinary, voting panel (made up of specialists and nonspecialists) rated the appropriateness of treatment of each patient scenario using a 9-point scale to designate a treatment as Appropriate (median rating, 7 to 9), May Be Appropriate (median rating, 4 to 6), or Rarely Appropriate (median rating, 1 to 3).

  19. Study of the tunneling effect within lattices with cubic structure on varying temperature

    International Nuclear Information System (INIS)

    Frisone, F.

    2008-01-01

    In this theoretical study, it is underlined that the presence of micro-cracks in the lattice structure increases the probability of tunneling effect between two deuterons by some orders of magnitude with respect to non-deformed lattices. We have derived an expression to compute the tunneling probability within a micro-crack, and hypothesized a D + 2 -D + 2 binding mechanism. Finally, the overall indications provided by these theoretical simulations appear to suggest that the deformation of the crystalline lattice, at varying temperature, seems able to influence the process of tunneling between the deuterons in the metal, while the forced loading with D 2 has, in general, no evident positive effects in pure metals, but in some cases could, on the contrary, condition the phenomenon negatively. (authors)

  20. Thouless energy as a unifying concept for Josephson junctions tuned through the Mott metal-insulator transition

    Science.gov (United States)

    Tahvildar-Zadeh, A. N.; Freericks, J. K.; Nikolić, B. K.

    2006-05-01

    The Thouless energy was introduced in the 1970s as a semiclassical energy for electrons diffusing through a finite-sized conductor. It turns out to be an important quantum-mechanical energy scale for many systems ranging from disordered metals to quantum chaos to quantum chromodynamics. In particular, it has been quite successful in describing the properties of Josephson junctions when the barrier is a diffusive normal-state metal. The Thouless energy concept can be generalized to insulating barriers by extracting an energy scale from the two-probe Kubo conductance of a strongly correlated electron system (metallic or insulating) via a generalized definition of the quantum-mechanical level spacing to many-body systems. This energy scale is known to determine the crossover from tunneling to Ohmic (thermally activated) transport in normal tunnel junctions. Here we use it to illustrate how the quasiclassical picture of transport in Josephson junctions is modified as the strongly correlated barrier passes through the Mott transition. Surprisingly, we find the quasiclassical form holds well beyond its putative realm of validity.