WorldWideScience

Sample records for nonvolatile memory elements

  1. Non-volatile memories

    CERN Document Server

    Lacaze, Pierre-Camille

    2014-01-01

    Written for scientists, researchers, and engineers, Non-volatile Memories describes the recent research and implementations in relation to the design of a new generation of non-volatile electronic memories. The objective is to replace existing memories (DRAM, SRAM, EEPROM, Flash, etc.) with a universal memory model likely to reach better performances than the current types of memory: extremely high commutation speeds, high implantation densities and retention time of information of about ten years.

  2. Nonvolatile Memory Elements Based on the Intercalation of Organic Molecules Inside Carbon Nanotubes

    Science.gov (United States)

    Meunier, Vincent; Kalinin, Sergei V.; Sumpter, Bobby G.

    2007-02-01

    We propose a novel class of nonvolatile memory elements based on the modification of the transport properties of a conducting carbon nanotube by the presence of an encapsulated molecule. The guest molecule has two stable orientational positions relative to the nanotube that correspond to conducting and nonconducting states. The mechanism, governed by a local gating effect of the molecule on the electronic properties of the nanotube host, is studied using density functional theory. The mechanisms of reversible reading and writing of information are illustrated with a F4TCNQ molecule encapsulated inside a metallic carbon nanotube. Our results suggest that this new type of nonvolatile memory element is robust, fatigue-free, and can operate at room temperature.

  3. Emerging non-volatile memories

    CERN Document Server

    Hong, Seungbum; Wouters, Dirk

    2014-01-01

    This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory. This book also: Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others. Provides an overview of non-volatile memory fundamentals. Broadens readers' understanding of future trends in non-volatile memories.

  4. Electrostatically telescoping nanotube nonvolatile memory device

    International Nuclear Information System (INIS)

    Kang, Jeong Won; Jiang Qing

    2007-01-01

    We propose a nonvolatile memory based on carbon nanotubes (CNTs) serving as the key building blocks for molecular-scale computers and investigate the dynamic operations of a double-walled CNT memory element by classical molecular dynamics simulations. The localized potential energy wells achieved from both the interwall van der Waals energy and CNT-metal binding energy make the bistability of the CNT positions and the electrostatic attractive forces induced by the voltage differences lead to the reversibility of this CNT memory. The material for the electrodes should be carefully chosen to achieve the nonvolatility of this memory. The kinetic energy of the CNT shuttle experiences several rebounds induced by the collisions of the CNT onto the metal electrodes, and this is critically important to the performance of such an electrostatically telescoping CNT memory because the collision time is sufficiently long to cause a delay of the state transition

  5. Surface-type nonvolatile electric memory elements based on organic-on-organic CuPc-H2Pc heterojunction

    International Nuclear Information System (INIS)

    Karimov, Khasan S.; Muqeet Rehman, M.; Zameer Abbas, S.; Ahmad, Zubair; Touati, Farid; Mahroof-Tahir, M.

    2015-01-01

    A novel surface-type nonvolatile electric memory elements based on organic semiconductors CuPc and H 2 Pc are fabricated by vacuum deposition of the CuPc and H 2 Pc films on preliminary deposited metallic (Ag and Cu) electrodes. The gap between Ag and Cu electrodes is 30–40 μm. For the current–voltage (I–V) characteristics the memory effect, switching effect, and negative differential resistance regions are observed. The switching mechanism is attributed to the electric-field-induced charge transfer. As a result the device switches from a low to a high-conductivity state and then back to a low conductivity state if the opposite polarity voltage is applied. The ratio of resistance at the high resistance state to that at the low resistance state is equal to 120–150. Under the switching condition, the electric current increases ∼ 80–100 times. A comparison between the forward and reverse I–V characteristics shows the presence of rectifying behavior. (paper)

  6. Organic Nonvolatile Memory Devices Based on Ferroelectricity

    NARCIS (Netherlands)

    Naber, Ronald C. G.; Asadi, Kamal; Blom, Paul W. M.; de Leeuw, Dago M.; de Boer, Bert

    2010-01-01

    A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low-cost memory technology. In this Review Article we discuss the latest developments in this area

  7. Organic nonvolatile memory devices based on ferroelectricity

    NARCIS (Netherlands)

    Naber, R.C.G.; Asadi, K.; Blom, P.W.M.; Leeuw, D.M. de; Boer, B. de

    2010-01-01

    A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low-cost memory technology. In this Review Article we discuss the latest developments in this area

  8. Carbon nanomaterials for non-volatile memories

    Science.gov (United States)

    Ahn, Ethan C.; Wong, H.-S. Philip; Pop, Eric

    2018-03-01

    Carbon can create various low-dimensional nanostructures with remarkable electronic, optical, mechanical and thermal properties. These features make carbon nanomaterials especially interesting for next-generation memory and storage devices, such as resistive random access memory, phase-change memory, spin-transfer-torque magnetic random access memory and ferroelectric random access memory. Non-volatile memories greatly benefit from the use of carbon nanomaterials in terms of bit density and energy efficiency. In this Review, we discuss sp2-hybridized carbon-based low-dimensional nanostructures, such as fullerene, carbon nanotubes and graphene, in the context of non-volatile memory devices and architectures. Applications of carbon nanomaterials as memory electrodes, interfacial engineering layers, resistive-switching media, and scalable, high-performance memory selectors are investigated. Finally, we compare the different memory technologies in terms of writing energy and time, and highlight major challenges in the manufacturing, integration and understanding of the physical mechanisms and material properties.

  9. Method for refreshing a non-volatile memory

    Science.gov (United States)

    Riekels, James E.; Schlesinger, Samuel

    2008-11-04

    A non-volatile memory and a method of refreshing a memory are described. The method includes allowing an external system to control refreshing operations within the memory. The memory may generate a refresh request signal and transmit the refresh request signal to the external system. When the external system finds an available time to process the refresh request, the external system acknowledges the refresh request and transmits a refresh acknowledge signal to the memory. The memory may also comprise a page register for reading and rewriting a data state back to the memory. The page register may comprise latches in lieu of supplemental non-volatile storage elements, thereby conserving real estate within the memory.

  10. Nonvolatile Memory Technology for Space Applications

    Science.gov (United States)

    Oldham, Timothy R.; Irom, Farokh; Friendlich, Mark; Nguyen, Duc; Kim, Hak; Berg, Melanie; LaBel, Kenneth A.

    2010-01-01

    This slide presentation reviews several forms of nonvolatile memory for use in space applications. The intent is to: (1) Determine inherent radiation tolerance and sensitivities, (2) Identify challenges for future radiation hardening efforts, (3) Investigate new failure modes and effects, and technology modeling programs. Testing includes total dose, single event (proton, laser, heavy ion), and proton damage (where appropriate). Test vehicles are expected to be a variety of non-volatile memory devices as available including Flash (NAND and NOR), Charge Trap, Nanocrystal Flash, Magnetic Memory (MRAM), Phase Change--Chalcogenide, (CRAM), Ferroelectric (FRAM), CNT, and Resistive RAM.

  11. Nonvolatile Rad-Hard Holographic Memory

    Science.gov (United States)

    Chao, Tien-Hsin; Zhou, Han-Ying; Reyes, George; Dragoi, Danut; Hanna, Jay

    2001-01-01

    We are investigating a nonvolatile radiation-hardened (rad-hard) holographic memory technology. Recently, a compact holographic data storage (CHDS) breadboard utilizing an innovative electro-optic scanner has been built and demonstrated for high-speed holographic data storage and retrieval. The successful integration of this holographic memory breadboard has paved the way for follow-on radiation resistance test of the photorefractive (PR) crystal, Fe:LiNbO3. We have also started the investigation of using two-photon PR crystals that are doubly doped with atoms of iron group (Ti, Cr, Mn, Cu) and of rare-earth group (Nd, Tb) for nonvolatile holographic recordings.

  12. Overview of emerging nonvolatile memory technologies.

    Science.gov (United States)

    Meena, Jagan Singh; Sze, Simon Min; Chand, Umesh; Tseng, Tseung-Yuen

    2014-01-01

    Nonvolatile memory technologies in Si-based electronics date back to the 1990s. Ferroelectric field-effect transistor (FeFET) was one of the most promising devices replacing the conventional Flash memory facing physical scaling limitations at those times. A variant of charge storage memory referred to as Flash memory is widely used in consumer electronic products such as cell phones and music players while NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. Emerging memory technologies promise new memories to store more data at less cost than the expensive-to-build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. They are being investigated and lead to the future as potential alternatives to existing memories in future computing systems. Emerging nonvolatile memory technologies such as magnetic random-access memory (MRAM), spin-transfer torque random-access memory (STT-RAM), ferroelectric random-access memory (FeRAM), phase-change memory (PCM), and resistive random-access memory (RRAM) combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the nonvolatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional (3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years. Subsequently, not an exaggeration to say that computer memory could soon earn the ultimate commercial validation for commercial scale-up and production the cheap plastic knockoff. Therefore, this review is devoted to the rapidly developing new

  13. Overview of emerging nonvolatile memory technologies

    Science.gov (United States)

    2014-01-01

    Nonvolatile memory technologies in Si-based electronics date back to the 1990s. Ferroelectric field-effect transistor (FeFET) was one of the most promising devices replacing the conventional Flash memory facing physical scaling limitations at those times. A variant of charge storage memory referred to as Flash memory is widely used in consumer electronic products such as cell phones and music players while NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. Emerging memory technologies promise new memories to store more data at less cost than the expensive-to-build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. They are being investigated and lead to the future as potential alternatives to existing memories in future computing systems. Emerging nonvolatile memory technologies such as magnetic random-access memory (MRAM), spin-transfer torque random-access memory (STT-RAM), ferroelectric random-access memory (FeRAM), phase-change memory (PCM), and resistive random-access memory (RRAM) combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the nonvolatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional (3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years. Subsequently, not an exaggeration to say that computer memory could soon earn the ultimate commercial validation for commercial scale-up and production the cheap plastic knockoff. Therefore, this review is devoted to the rapidly developing new

  14. Flexible graphene–PZT ferroelectric nonvolatile memory

    International Nuclear Information System (INIS)

    Lee, Wonho; Ahn, Jong-Hyun; Kahya, Orhan; Toh, Chee Tat; Özyilmaz, Barbaros

    2013-01-01

    We report the fabrication of a flexible graphene-based nonvolatile memory device using Pb(Zr 0.35 ,Ti 0.65 )O 3 (PZT) as the ferroelectric material. The graphene and PZT ferroelectric layers were deposited using chemical vapor deposition and sol–gel methods, respectively. Such PZT films show a high remnant polarization (P r ) of 30 μC cm −2 and a coercive voltage (V c ) of 3.5 V under a voltage loop over ±11 V. The graphene–PZT ferroelectric nonvolatile memory on a plastic substrate displayed an on/off current ratio of 6.7, a memory window of 6 V and reliable operation. In addition, the device showed one order of magnitude lower operation voltage range than organic-based ferroelectric nonvolatile memory after removing the anti-ferroelectric behavior incorporating an electrolyte solution. The devices showed robust operation in bent states of bending radii up to 9 mm and in cycling tests of 200 times. The devices exhibited remarkable mechanical properties and were readily integrated with plastic substrates for the production of flexible circuits. (paper)

  15. Flexible graphene-PZT ferroelectric nonvolatile memory.

    Science.gov (United States)

    Lee, Wonho; Kahya, Orhan; Toh, Chee Tat; Ozyilmaz, Barbaros; Ahn, Jong-Hyun

    2013-11-29

    We report the fabrication of a flexible graphene-based nonvolatile memory device using Pb(Zr0.35,Ti0.65)O3 (PZT) as the ferroelectric material. The graphene and PZT ferroelectric layers were deposited using chemical vapor deposition and sol–gel methods, respectively. Such PZT films show a high remnant polarization (Pr) of 30 μC cm−2 and a coercive voltage (Vc) of 3.5 V under a voltage loop over ±11 V. The graphene–PZT ferroelectric nonvolatile memory on a plastic substrate displayed an on/off current ratio of 6.7, a memory window of 6 V and reliable operation. In addition, the device showed one order of magnitude lower operation voltage range than organic-based ferroelectric nonvolatile memory after removing the anti-ferroelectric behavior incorporating an electrolyte solution. The devices showed robust operation in bent states of bending radii up to 9 mm and in cycling tests of 200 times. The devices exhibited remarkable mechanical properties and were readily integrated with plastic substrates for the production of flexible circuits.

  16. Radiation evaluation of commercial ferroelectric nonvolatile memories

    International Nuclear Information System (INIS)

    Benedetto, J.M.; DeLancey, W.M.; Oldham, T.R.; McGarrity, J.M.; Tipton, C.W.; Brassington, M.; Fisch, D.E.

    1991-01-01

    This paper reports on ferroelectric (FE) on complementary metal-oxide semiconductor (CMOS) 4-kbit nonvolatile memories, 8-bit octal latches (with and without FE), and process control test chips that were used to establish a baseline characterization of the radiation response of CMOS/FE integrated devices and to determine whether the additional FE processing caused significant degradation to the baseline CMOS process. Functional failure of all 4-kbit memories and octal latches occurred at total doses of between 2 and 4 krad(Si), most likely due to field- oxide effects in the underlying CMOS. No significant difference was observed between the radiation responses of devices with and without the FE film in this commercial process

  17. Role of Non-Volatile Memories in Automotive and IoT Markets

    Science.gov (United States)

    2017-03-01

    Standard Manufacturing Supply Long Term Short to Medium Term Density Up to 16MB Up to 2MB IO Configuration Up to x128 Up to x32 Design for Test...Role of Non-Volatile Memories in Automotive and IoT Markets Vipin Tiwari Director, Business Development and Product Marketing SST – A Wholly Own...microcontrollers (MCU) and certainly one of the most challenging elements to master. This paper addresses the role of non-volatile memories for

  18. Nonvolatile memory design magnetic, resistive, and phase change

    CERN Document Server

    Li, Hai

    2011-01-01

    The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances,

  19. Highly Stretchable Non-volatile Nylon Thread Memory

    Science.gov (United States)

    Kang, Ting-Kuo

    2016-04-01

    Integration of electronic elements into textiles, to afford e-textiles, can provide an ideal platform for the development of lightweight, thin, flexible, and stretchable e-textiles. This approach will enable us to meet the demands of the rapidly growing market of wearable-electronics on arbitrary non-conventional substrates. However the actual integration of the e-textiles that undergo mechanical deformations during both assembly and daily wear or satisfy the requirements of the low-end applications, remains a challenge. Resistive memory elements can also be fabricated onto a nylon thread (NT) for e-textile applications. In this study, a simple dip-and-dry process using graphene-PEDOT:PSS (poly(3,4-ethylenedioxythiophene) polystyrene sulfonate) ink is proposed for the fabrication of a highly stretchable non-volatile NT memory. The NT memory appears to have typical write-once-read-many-times characteristics. The results show that an ON/OFF ratio of approximately 103 is maintained for a retention time of 106 s. Furthermore, a highly stretchable strain and a long-term digital-storage capability of the ON-OFF-ON states are demonstrated in the NT memory. The actual integration of the knitted NT memories into textiles will enable new design possibilities for low-cost and large-area e-textile memory applications.

  20. Nonvolatile Memory Materials for Neuromorphic Intelligent Machines.

    Science.gov (United States)

    Jeong, Doo Seok; Hwang, Cheol Seong

    2018-04-18

    Recent progress in deep learning extends the capability of artificial intelligence to various practical tasks, making the deep neural network (DNN) an extremely versatile hypothesis. While such DNN is virtually built on contemporary data centers of the von Neumann architecture, physical (in part) DNN of non-von Neumann architecture, also known as neuromorphic computing, can remarkably improve learning and inference efficiency. Particularly, resistance-based nonvolatile random access memory (NVRAM) highlights its handy and efficient application to the multiply-accumulate (MAC) operation in an analog manner. Here, an overview is given of the available types of resistance-based NVRAMs and their technological maturity from the material- and device-points of view. Examples within the strategy are subsequently addressed in comparison with their benchmarks (virtual DNN in deep learning). A spiking neural network (SNN) is another type of neural network that is more biologically plausible than the DNN. The successful incorporation of resistance-based NVRAM in SNN-based neuromorphic computing offers an efficient solution to the MAC operation and spike timing-based learning in nature. This strategy is exemplified from a material perspective. Intelligent machines are categorized according to their architecture and learning type. Also, the functionality and usefulness of NVRAM-based neuromorphic computing are addressed. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Ferroelectric memories: A possible answer to the hardened nonvolatile question

    International Nuclear Information System (INIS)

    Messenger, G.C.; Coppage, F.N.

    1988-01-01

    Ferroelectric memory cells have been fabricated using a process compatible with semiconductor VLSI (Very Large-Scale Integration) manufacturing techniques which are basically nonvolatile and radiation hard. The memory can be made NDRO (Nondestructive Readout) for strategic systems using several techniques; the most practical is probably a rapid read/restore in combination with EDAC software. This memory can replace plated wire and will have substantial advantages in cost, weight, size, power and speed. It provides a practical cost-competitive solution to the need for nonvolatile RAM in all hardened tactical, avionic, and space systems

  2. EDITORIAL: Non-volatile memory based on nanostructures Non-volatile memory based on nanostructures

    Science.gov (United States)

    Kalinin, Sergei; Yang, J. Joshua; Demming, Anna

    2011-06-01

    Non-volatile memory refers to the crucial ability of computers to store information once the power source has been removed. Traditionally this has been achieved through flash, magnetic computer storage and optical discs, and in the case of very early computers paper tape and punched cards. While computers have advanced considerably from paper and punched card memory devices, there are still limits to current non-volatile memory devices that restrict them to use as secondary storage from which data must be loaded and carefully saved when power is shut off. Denser, faster, low-energy non-volatile memory is highly desired and nanostructures are the critical enabler. This special issue on non-volatile memory based on nanostructures describes some of the new physics and technology that may revolutionise future computers. Phase change random access memory, which exploits the reversible phase change between crystalline and amorphous states, also holds potential for future memory devices. The chalcogenide Ge2Sb2Te5 (GST) is a promising material in this field because it combines a high activation energy for crystallization and a relatively low crystallization temperature, as well as a low melting temperature and low conductivity, which accommodates localized heating. Doping is often used to lower the current required to activate the phase change or 'reset' GST but this often aggravates other problems. Now researchers in Korea report in-depth studies of SiO2-doped GST and identify ways of optimising the material's properties for phase-change random access memory [1]. Resistance switching is an area that has attracted a particularly high level of interest for non-volatile memory technology, and a great deal of research has focused on the potential of TiO2 as a model system in this respect. Researchers at HP labs in the US have made notable progress in this field, and among the work reported in this special issue they describe means to control the switch resistance and show

  3. Non-volatile memory based on the ferroelectric photovoltaic effect

    Science.gov (United States)

    Guo, Rui; You, Lu; Zhou, Yang; Shiuh Lim, Zhi; Zou, Xi; Chen, Lang; Ramesh, R.; Wang, Junling

    2013-01-01

    The quest for a solid state universal memory with high-storage density, high read/write speed, random access and non-volatility has triggered intense research into new materials and novel device architectures. Though the non-volatile memory market is dominated by flash memory now, it has very low operation speed with ~10 μs programming and ~10 ms erasing time. Furthermore, it can only withstand ~105 rewriting cycles, which prevents it from becoming the universal memory. Here we demonstrate that the significant photovoltaic effect of a ferroelectric material, such as BiFeO3 with a band gap in the visible range, can be used to sense the polarization direction non-destructively in a ferroelectric memory. A prototype 16-cell memory based on the cross-bar architecture has been prepared and tested, demonstrating the feasibility of this technique. PMID:23756366

  4. Active non-volatile memory post-processing

    Energy Technology Data Exchange (ETDEWEB)

    Kannan, Sudarsun; Milojicic, Dejan S.; Talwar, Vanish

    2017-04-11

    A computing node includes an active Non-Volatile Random Access Memory (NVRAM) component which includes memory and a sub-processor component. The memory is to store data chunks received from a processor core, the data chunks comprising metadata indicating a type of post-processing to be performed on data within the data chunks. The sub-processor component is to perform post-processing of said data chunks based on said metadata.

  5. Organic non-volatile memories from ferroelectric phase separated blends

    Science.gov (United States)

    Asadi, Kamal; de Leeuw, Dago; de Boer, Bert; Blom, Paul

    2009-03-01

    Ferroelectric polarisation is an attractive physical property for non-volatile binary switching. The functionality of the targeted memory should be based on resistive switching. Conductivity and ferroelectricity however cannot be tuned independently. The challenge is to develop a storage medium in which the favourable properties of ferroelectrics such as bistability and non-volatility can be combined with the beneficial properties provided by semiconductors such as conductivity and rectification. In this contribution we present an integrated solution by blending semiconducting and ferroelectric polymers into phase separated networks. The polarisation field of the ferroelectric modulates the injection barrier at the semiconductor--metal contact. This combination allows for solution-processed non-volatile memory arrays with a simple cross-bar architecture that can be read-out non-destructively. Based on this general concept a non-volatile, reversible switchable Schottky diode with relatively fast programming time of shorter than 100 microseconds, long information retention time of longer than 10^ days, and high programming cycle endurance with non-destructive read-out is demonstrated.

  6. Use of non-volatile memories for SSC detector readout

    International Nuclear Information System (INIS)

    Fennelly, A.J.; Woosley, J.K.; Johnson, M.B.

    1990-01-01

    Use of non-volatile memory units at the end of each fiber optic bunch/strand would substantially increase information available from experiments by providing a complete event history, in addition to easing real time processing requirements. This may be an alternative to enhancing technology to optical computing techniques. Available and low-risk projected technologies will be surveyed, with costing addressed. Some discussion will be given to covnersion of optical signals, to electronic information, concepts for providing timing pulses to the memory units, and to the magnetoresistive (MRAM) and ferroelectric (FERAM) random access memory technologies that may be utilized in the prototype system

  7. Electrostatic Switching in Vertically Oriented Nanotubes for Nonvolatile Memory Applications

    Science.gov (United States)

    Kaul, Anupama B.; Khan, Paul; Jennings, Andrew T.; Greer, Julia R.; Megerian, Krikor G.; Allmen, Paul von

    2009-01-01

    We have demonstrated electrostatic switching in vertically oriented nanotubes or nanofibers, where a nanoprobe was used as the actuating electrode inside an SEM. When the nanoprobe was manipulated to be in close proximity to a single tube, switching voltages between 10 V - 40 V were observed, depending on the geometrical parameters. The turn-on transitions appeared to be much sharper than the turn-off transitions which were limited by the tube-to-probe contact resistances. In many cases, stiction forces at these dimensions were dominant, since the tube appeared stuck to the probe even after the voltage returned to 0 V, suggesting that such structures are promising for nonvolatile memory applications. The stiction effects, to some extent, can be adjusted by engineering the switch geometry appropriately. Nanoscale mechanical measurements were also conducted on the tubes using a custom-built anoindentor inside an SEM, from which preliminary material parameters, such as the elastic modulus, were extracted. The mechanical measurements also revealed that the tubes appear to be well adhered to the substrate. The material parameters gathered from the mechanical measurements were then used in developing an electrostatic model of the switch using a commercially available finite-element simulator. The calculated pull-in voltages appeared to be in agreement to the experimentally obtained switching voltages to first order.

  8. Novel applications of non-volatile memories

    Energy Technology Data Exchange (ETDEWEB)

    Duthie, I

    1982-01-01

    The author reviews briefly the evolution of the programmable memory and the alternative technologies, before discussing the operation of a small EEPROM when used in conjunction with a microprocessor for typical applications. Some applications are reviewed and the opportunities which eeproms can offer for new applications are presented, together with the requirements for artificial intelligence to become a reality.

  9. Design considerations for a radiation hardened nonvolatile memory

    International Nuclear Information System (INIS)

    Murray, J.R.

    1993-01-01

    Sub-optimal design practices can reduce the radiation hardness of a circuit even though it is fabricated in a radiation hardened process. This is especially true for a nonvolatile memory, as compared to a standard digital circuit, where high voltages and unusual bias conditions are required. This paper will discuss the design technique's used in the development of a 64K EEPROM (Electrically Erasable Programmable Read Only Memory) to maximize radiation hardness. The circuit radiation test results will be reviewed in order to provide validation of the techniques

  10. Channel equalization techniques for non-volatile memristor memories

    KAUST Repository

    Naous, Rawan

    2016-03-16

    Channel coding and information theoretic approaches have been utilized in conventional non-volatile memories to overcome their inherent design limitations of leakage, coupling and refresh rates. However, the continuous scaling and integration constraints set on the current devices directed the attention towards emerging memory technologies as suitable alternatives. Memristive devices are prominent candidates to replace the conventional electronics due to its non-volatility and small feature size. Nonetheless, memristor-based memories still encounter an accuracy limitation throughout the read operation addressed as the sneak path phenomenon. The readout data is corrupted with added distortion that increases significantly the bit error rate and jeopardizes the reliability of the read operation. A novel technique is applied to alleviate this distorting effect where the communication channel model is proposed for the memory array. Noise cancellation principles are applied with the aid of preset pilots to extract channel information and adjust the readout values accordingly. The proposed technique has the virtue of high speed, energy efficiency, and low complexity design while achieving high reliability and error-free decoding.

  11. Channel equalization techniques for non-volatile memristor memories

    KAUST Repository

    Naous, Rawan; Zidan, Mohammed A.; Salem, Ahmed Sultan; Salama, Khaled N.

    2016-01-01

    Channel coding and information theoretic approaches have been utilized in conventional non-volatile memories to overcome their inherent design limitations of leakage, coupling and refresh rates. However, the continuous scaling and integration constraints set on the current devices directed the attention towards emerging memory technologies as suitable alternatives. Memristive devices are prominent candidates to replace the conventional electronics due to its non-volatility and small feature size. Nonetheless, memristor-based memories still encounter an accuracy limitation throughout the read operation addressed as the sneak path phenomenon. The readout data is corrupted with added distortion that increases significantly the bit error rate and jeopardizes the reliability of the read operation. A novel technique is applied to alleviate this distorting effect where the communication channel model is proposed for the memory array. Noise cancellation principles are applied with the aid of preset pilots to extract channel information and adjust the readout values accordingly. The proposed technique has the virtue of high speed, energy efficiency, and low complexity design while achieving high reliability and error-free decoding.

  12. Organic nonvolatile memory devices with charge trapping multilayer graphene film

    International Nuclear Information System (INIS)

    Ji, Yongsung; Choe, Minhyeok; Cho, Byungjin; Song, Sunghoon; Yoon, Jongwon; Ko, Heung Cho; Lee, Takhee

    2012-01-01

    We fabricated an array-type organic nonvolatile memory device with multilayer graphene (MLG) film embedded in polyimide (PI) layers. The memory devices showed a high ON/OFF ratio (over 10 6 ) and a long retention time (over 10 4 s). The switching of the Al/PI/MLG/PI/Al memory devices was due to the presence of the MLG film inserted into the PI layers. The double-log current–voltage characteristics could be explained by the space-charge-limited current conduction based on a charge-trap model. A conductive atomic force microscopy found that the conduction paths in the low-resistance ON state were distributed in a highly localized area, which was associated with a carbon-rich filamentary switching mechanism. (paper)

  13. Nonvolatile memory effect of tungsten nanocrystals under oxygen plasma treatments

    International Nuclear Information System (INIS)

    Chen, Shih-Cheng; Chang, Ting-Chang; Chen, Wei-Ren; Lo, Yuan-Chun; Wu, Kai-Ting; Sze, S.M.; Chen, Jason; Liao, I.H.; Yeh, Fon-Shan

    2010-01-01

    In this work, an oxygen plasma treatment was used to improve the memory effect of nonvolatile W nanocrystal memory, including memory window, retention and endurance. To investigate the role of the oxygen plasma treatment in charge storage characteristics, the X-ray photon-emission spectra (XPS) were performed to analyze the variation of chemical composition for W nanocrystal embedded oxide both with and without the oxygen plasma treatment. In addition, the transmission electron microscopy (TEM) analyses were also used to identify the microstructure in the thin film and the size and density of W nanocrystals. The device with the oxygen plasma treatment shows a significant improvement of charge storage effect, because the oxygen plasma treatment enhanced the quality of silicon oxide surrounding the W nanocrystals. Therefore, the data retention and endurance characteristics were also improved by the passivation.

  14. A room-temperature non-volatile CNT-based molecular memory cell

    Science.gov (United States)

    Ye, Senbin; Jing, Qingshen; Han, Ray P. S.

    2013-04-01

    Recent experiments with a carbon nanotube (CNT) system confirmed that the innertube can oscillate back-and-forth even under a room-temperature excitation. This demonstration of relative motion suggests that it is now feasible to build a CNT-based molecular memory cell (MC), and the key to bring the concept to reality is the precision control of the moving tube for sustained and reliable read/write (RW) operations. Here, we show that by using a 2-section outertube design, we are able to suitably recalibrate the system energetics and obtain the designed performance characteristics of a MC. Further, the resulting energy modification enables the MC to operate as a non-volatile memory element at room temperatures. Our paper explores a fundamental understanding of a MC and its response at the molecular level to roadmap a novel approach in memory technologies that can be harnessed to overcome the miniaturization limit and memory volatility in memory technologies.

  15. Bioorganic nanodots for non-volatile memory devices

    International Nuclear Information System (INIS)

    Amdursky, Nadav; Shalev, Gil; Handelman, Amir; Natan, Amir; Rosenwaks, Yossi; Litsyn, Simon; Szwarcman, Daniel; Rosenman, Gil; Roizin, Yakov

    2013-01-01

    In recent years we are witnessing an intensive integration of bio-organic nanomaterials in electronic devices. Here we show that the diphenylalanine bio-molecule can self-assemble into tiny peptide nanodots (PNDs) of ∼2 nm size, and can be embedded into metal-oxide-semiconductor devices as charge storage nanounits in non-volatile memory. For that purpose, we first directly observe the crystallinity of a single PND by electron microscopy. We use these nanocrystalline PNDs units for the formation of a dense monolayer on SiO 2 surface, and study the electron/hole trapping mechanisms and charge retention ability of the monolayer, followed by fabrication of PND-based memory cell device

  16. Bioorganic nanodots for non-volatile memory devices

    Energy Technology Data Exchange (ETDEWEB)

    Amdursky, Nadav; Shalev, Gil; Handelman, Amir; Natan, Amir; Rosenwaks, Yossi [School of Electrical Engineering, Iby and Aladar Fleischman Faculty of Engineering, Tel Aviv University, Tel Aviv 69978 (Israel); Litsyn, Simon; Szwarcman, Daniel; Rosenman, Gil, E-mail: rgil@post.tau.ac.il [School of Electrical Engineering, Iby and Aladar Fleischman Faculty of Engineering, Tel Aviv University, Tel Aviv 69978 (Israel); StoreDot LTD, 16 Menahem Begin St., Ramat Gan (Israel); Roizin, Yakov [School of Electrical Engineering, Iby and Aladar Fleischman Faculty of Engineering, Tel Aviv University, Tel Aviv 69978 (Israel); TowerJazz, P.O. Box 619, Migdal HaEmek 23105 (Israel)

    2013-12-01

    In recent years we are witnessing an intensive integration of bio-organic nanomaterials in electronic devices. Here we show that the diphenylalanine bio-molecule can self-assemble into tiny peptide nanodots (PNDs) of ∼2 nm size, and can be embedded into metal-oxide-semiconductor devices as charge storage nanounits in non-volatile memory. For that purpose, we first directly observe the crystallinity of a single PND by electron microscopy. We use these nanocrystalline PNDs units for the formation of a dense monolayer on SiO{sub 2} surface, and study the electron/hole trapping mechanisms and charge retention ability of the monolayer, followed by fabrication of PND-based memory cell device.

  17. Nonvolatile memory characteristics in metal-oxide-semiconductors containing metal nanoparticles fabricated by using a unique laser irradiation method

    International Nuclear Information System (INIS)

    Yang, JungYup; Yoon, KapSoo; Kim, JuHyung; Choi, WonJun; Do, YoungHo; Kim, ChaeOk; Hong, JinPyo

    2006-01-01

    Metal-oxide-semiconductor (MOS) capacitors with metal nanoparticles (Co NP) were successfully fabricated by utilizing an external laser exposure technique for application of non-volatile memories. Images of high-resolution transmission electron microscopy reveal that the spherically shaped Co NP are clearly embedded in the gate oxide layer. Capacitance-voltage measurements exhibit typical charging and discharging effects with a large flat-band shift. The effects of the tunnel oxide thickness and the different tunnel materials are analyzed using capacitance-voltage and retention characteristics. In addition, the memory characteristics of the NP embedded in a high-permittivity material are investigated because the thickness of conventionally available SiO 2 gates is approaching the quantum tunneling limit as devices are scaled down. Finally, the suitability of NP memory devices for nonvolatile memory applications is also discussed. The present results suggest that our unique laser exposure technique holds promise for the NP formation as floating gate elements in nonvolatile NP memories and that the quality of the tunnel oxide is very important for enhancing the retention properties of nonvolatile memory.

  18. Graphene-quantum-dot nonvolatile charge-trap flash memories

    International Nuclear Information System (INIS)

    Sin Joo, Soong; Kim, Jungkil; Seok Kang, Soo; Kim, Sung; Choi, Suk-Ho; Won Hwang, Sung

    2014-01-01

    Nonvolatile flash-memory capacitors containing graphene quantum dots (GQDs) of 6, 12, and 27 nm average sizes (d) between SiO 2 layers for use as charge traps have been prepared by sequential processes: ion-beam sputtering deposition (IBSD) of 10 nm SiO 2 on a p-type wafer, spin-coating of GQDs on the SiO 2 layer, and IBSD of 20 nm SiO 2 on the GQD layer. The presence of almost a single array of GQDs at a distance of ∼13 nm from the SiO 2 /Si wafer interface is confirmed by transmission electron microscopy and photoluminescence. The memory window estimated by capacitance–voltage curves is proportional to d for sweep voltages wider than  ± 3 V, and for d = 27 nm the GQD memories show a maximum memory window of 8 V at a sweep voltage of  ± 10 V. The program and erase speeds are largest at d = 12 and 27 nm, respectively, and the endurance and data-retention properties are the best at d = 27 nm. These memory behaviors can be attributed to combined effects of edge state and quantum confinement. (papers)

  19. Fabrication of Pb (Zr, Ti) O3 Thin Film for Non-Volatile Memory Device Application

    International Nuclear Information System (INIS)

    Mar Lar Win

    2011-12-01

    Ferroelectric lead zirconate titanate powder was composed of mainly the oxides of titanium, zirconium and lead. PZT powder was firstly prepared by thermal synthesis at different Zr/Ti ratios with various sintering temperatures. PZT thin film was fabricated on SiO2/Si substrate by using thermal evaporation method. Physical and elemental analysis were carried out by using SEM, EDX and XRD The ferroelectric properties and the switching behaviour of the PZT thin films were investigated. The ferroelectric properties and switching properties of the PZT thin film (near morphotropic phase boundary sintered at 800 C) could function as a nonvolatile memory.

  20. ZnO as dielectric for optically transparent non-volatile memory

    International Nuclear Information System (INIS)

    Salim, N. Tjitra; Aw, K.C.; Gao, W.; Wright, Bryon E.

    2009-01-01

    This paper discusses the application of a DC sputtered ZnO thin film as a dielectric in an optically transparent non-volatile memory. The main motivation for using ZnO as a dielectric is due to its optical transparency and mechanical flexibility. We have established the relationship between the electrical resistivity (ρ) and the activation energy (E a ) of the electron transport in the conduction band of the ZnO film. The ρ of 2 x 10 4 -5 x 10 7 Ω-cm corresponds to E a of 0.36-0.76 eV, respectively. The k-value and optical band-gap for films sputtered with Ar:O 2 ratio of 4:1 are 53 ± 3.6 and 3.23 eV, respectively. In this paper, the basic charge storage element for a non-volatile memory is a triple layer dielectric structure in which a 50 nm thick ZnO film is sandwiched between two layers of methyl silsesquioxane sol-gel dielectric of varying thickness. A pronounced clockwise capacitance-voltage (C-V) hysteresis was observed with a memory window of 6 V. The integration with a solution-processable pentacene, 13,6-N-Sulfinylacetamodipentacene resulted in an optically transparent organic field effect transistor non-volatile memory (OFET-NVM). We have demonstrated that this OFET-NVM can be electrically programmed and erased at low voltage (± 10 V) with a threshold voltage shift of 4.0 V.

  1. Controlled data storage for non-volatile memory cells embedded in nano magnetic logic

    Science.gov (United States)

    Riente, Fabrizio; Ziemys, Grazvydas; Mattersdorfer, Clemens; Boche, Silke; Turvani, Giovanna; Raberg, Wolfgang; Luber, Sebastian; Breitkreutz-v. Gamm, Stephan

    2017-05-01

    Among the beyond-CMOS technologies, perpendicular Nano Magnetic Logic (pNML) is a promising candidate due to its low power consumption, its non-volatility and its monolithic 3D integrability, which makes it possible to integrate memory and logic into the same device by exploiting the interaction of bi-stable nanomagnets with perpendicular magnetic anisotropy. Logic computation and signal synchronization are achieved by focus ion beam irradiation and by pinning domain walls in magnetic notches. However, in realistic circuits, the information storage and their read-out are crucial issues, often ignored in the exploration of beyond-CMOS devices. In this paper we address these issues by experimentally demonstrating a pNML memory element, whose read and write operations can be controlled by two independent pulsed currents. Our results prove the correct behavior of the proposed structure that enables high density memory embedded in the logic plane of 3D-integrated pNML circuits.

  2. High-performance non-volatile organic ferroelectric memory on banknotes

    KAUST Repository

    Khan, Yasser; Bhansali, Unnat Sampatraj; Alshareef, Husam N.

    2012-01-01

    High-performance non-volatile polymer ferroelectric memory are fabricated on banknotes using poly(vinylidene fluoride trifluoroethylene). The devices show excellent performance with high remnant polarization, low operating voltages, low leakage

  3. Crested Tunnel Barriers for Fast, Scalable, Nonvolatile Semiconductor Memories (Theme 3)

    National Research Council Canada - National Science Library

    Likharev, Konstantin K; Ma, Tso-Ping

    2006-01-01

    .... If demonstrated in silicon-compatible materials with sufficient endurance under electric stress, this effect may enable high-density, high-speed nonvolatile memories that may potentially replace DRAM...

  4. Nanopatterned ferroelectrics for ultrahigh density rad-hard nonvolatile memories.

    Energy Technology Data Exchange (ETDEWEB)

    Brennecka, Geoffrey L.; Stevens, Jeffrey; Scrymgeour, David; Gin, Aaron V.; Tuttle, Bruce Andrew

    2010-09-01

    Radiation hard nonvolatile random access memory (NVRAM) is a crucial component for DOE and DOD surveillance and defense applications. NVRAMs based upon ferroelectric materials (also known as FERAMs) are proven to work in radiation-rich environments and inherently require less power than many other NVRAM technologies. However, fabrication and integration challenges have led to state-of-the-art FERAMs still being fabricated using a 130nm process while competing phase-change memory (PRAM) has been demonstrated with a 20nm process. Use of block copolymer lithography is a promising approach to patterning at the sub-32nm scale, but is currently limited to self-assembly directly on Si or SiO{sub 2} layers. Successful integration of ferroelectrics with discrete and addressable features of {approx}15-20nm would represent a 100-fold improvement in areal memory density and would enable more highly integrated electronic devices required for systems advances. Towards this end, we have developed a technique that allows us to carry out block copolymer self-assembly directly on a huge variety of different materials and have investigated the fabrication, integration, and characterization of electroceramic materials - primarily focused on solution-derived ferroelectrics - with discrete features of {approx}20nm and below. Significant challenges remain before such techniques will be capable of fabricating fully integrated NVRAM devices, but the tools developed for this effort are already finding broader use. This report introduces the nanopatterned NVRAM device concept as a mechanism for motivating the subsequent studies, but the bulk of the document will focus on the platform and technology development.

  5. The MONOS memory transistor: application in a radiation-hard nonvolatile RAM

    International Nuclear Information System (INIS)

    Brown, W.D.

    1985-01-01

    The MONOS (metal-oxide-nitride-oxide-silicon) device is a prime candidate for use as the nonvolatile memory element in a radiation-hardened RAM (random-access memory). The endurance, retention and radiation properties of MONOS memory transistors have been studied as a function of post nitride deposition annealing. Following the nitride layer deposition, all devices were subjected to an 800 0 C oxidation step and some were then annealed at 900 0 C in nitrogen. The nitrogen anneal produces an increase in memory window size of approximately 40%. The memory window center of the annealed devices is shifted toward more positive voltages and is more stable with endurance cycling. Endurance cycling to 10 9 cycles produces a 20% increase in memory window size and a 60% increase in decay rate. For a radiation total dose of 10 6 rads (Si), the memory window size is essentially unchanged and the decay rate increases approximately 13%. A combination of 10 9 cycles and 10 6 rads (Si) reduces the decades of retention (in sec) from 6.3 to 4.3 for a +- 23-V 16-μsec write/erase pulse. (author)

  6. A graphene-based non-volatile memory

    Science.gov (United States)

    Loisel, Loïc.; Maurice, Ange; Lebental, Bérengère; Vezzoli, Stefano; Cojocaru, Costel-Sorin; Tay, Beng Kang

    2015-09-01

    We report on the development and characterization of a simple two-terminal non-volatile graphene switch. After an initial electroforming step during which Joule heating leads to the formation of a nano-gap impeding the current flow, the devices can be switched reversibly between two well-separated resistance states. To do so, either voltage sweeps or pulses can be used, with the condition that VSET achieve reversible switching on more than 100 cycles with resistance ratio values of 104. This approach of graphene memory is competitive as compared to other graphene approaches such as redox of graphene oxide, or electro-mechanical switches with suspended graphene. We suggest a switching model based on a planar electro-mechanical switch, whereby electrostatic, elastic and friction forces are competing to switch devices ON and OFF, and the stability in the ON state is achieved by the formation of covalent bonds between the two stretched sides of the graphene, hence bridging the nano-gap. Developing a planar electro-mechanical switch enables to obtain the advantages of electro-mechanical switches while avoiding most of their drawbacks.

  7. Nonvolatile Resistive Switching Memory Utilizing Cobalt Embedded in Gelatin

    Directory of Open Access Journals (Sweden)

    Cheng-Jung Lee

    2017-12-01

    Full Text Available This study investigates the preparation and electrical properties of Al/cobalt-embedded gelatin (CoG/ indium tin oxide (ITO resistive switching memories. Co. elements can be uniformly distributed in gelatin without a conventional dispersion procedure, as confirmed through energy dispersive X-ray analyzer and X-ray photoelectron spectroscopy observations. With an appropriate Co. concentration, Co. ions can assist the formation of an interfacial AlOx layer and improve the memory properties. High ON/OFF ratio, good retention capability, and good endurance switching cycles are demonstrated with 1 M Co. concentration, in contrast to 0.5 M and 2 M memory devices. This result can be attributed to the suitable thickness of the interfacial AlOx layer, which acts as an oxygen reservoir and stores and releases oxygen during switching. The Co. element in a solution-processed gelatin matrix has high potential for bio-electronic applications.

  8. Organic field-effect transistor nonvolatile memories utilizing sputtered C nanoparticles as nano-floating-gate

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Jie; Liu, Chang-Hai; She, Xiao-Jian; Sun, Qi-Jun; Gao, Xu; Wang, Sui-Dong, E-mail: wangsd@suda.edu.cn [Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123 (China)

    2014-10-20

    High-performance organic field-effect transistor nonvolatile memories have been achieved using sputtered C nanoparticles as the nano-floating-gate. The sputtered C nano-floating-gate is prepared with low-cost material and simple process, forming uniform and discrete charge trapping sites covered by a smooth and complete polystyrene layer. The devices show large memory window, excellent retention capability, and programming/reading/erasing/reading endurance. The sputtered C nano-floating-gate can effectively trap both holes and electrons, and it is demonstrated to be suitable for not only p-type but also n-type organic field-effect transistor nonvolatile memories.

  9. Organic field-effect transistor nonvolatile memories utilizing sputtered C nanoparticles as nano-floating-gate

    International Nuclear Information System (INIS)

    Liu, Jie; Liu, Chang-Hai; She, Xiao-Jian; Sun, Qi-Jun; Gao, Xu; Wang, Sui-Dong

    2014-01-01

    High-performance organic field-effect transistor nonvolatile memories have been achieved using sputtered C nanoparticles as the nano-floating-gate. The sputtered C nano-floating-gate is prepared with low-cost material and simple process, forming uniform and discrete charge trapping sites covered by a smooth and complete polystyrene layer. The devices show large memory window, excellent retention capability, and programming/reading/erasing/reading endurance. The sputtered C nano-floating-gate can effectively trap both holes and electrons, and it is demonstrated to be suitable for not only p-type but also n-type organic field-effect transistor nonvolatile memories.

  10. The retention characteristics of nonvolatile SNOS memory transistors in a radiation environment: Experiment and model

    International Nuclear Information System (INIS)

    McWhorter, P.J.; Miller, S.L.; Dellin, T.A.; Axness, C.L.

    1987-01-01

    Experimental data and a model to accurately and quantitatively predict the data are presented for retention of SNOS memory devices over a wide range of dose rates. A wide range of SNOS stack geometries are examined. The model is designed to aid in screening nonvolatile memories for use in a radiation environment

  11. Solution-Processed Wide-Bandgap Organic Semiconductor Nanostructures Arrays for Nonvolatile Organic Field-Effect Transistor Memory.

    Science.gov (United States)

    Li, Wen; Guo, Fengning; Ling, Haifeng; Liu, Hui; Yi, Mingdong; Zhang, Peng; Wang, Wenjun; Xie, Linghai; Huang, Wei

    2018-01-01

    In this paper, the development of organic field-effect transistor (OFET) memory device based on isolated and ordered nanostructures (NSs) arrays of wide-bandgap (WBG) small-molecule organic semiconductor material [2-(9-(4-(octyloxy)phenyl)-9H-fluoren-2-yl)thiophene]3 (WG 3 ) is reported. The WG 3 NSs are prepared from phase separation by spin-coating blend solutions of WG 3 /trimethylolpropane (TMP), and then introduced as charge storage elements for nonvolatile OFET memory devices. Compared to the OFET memory device with smooth WG 3 film, the device based on WG 3 NSs arrays exhibits significant improvements in memory performance including larger memory window (≈45 V), faster switching speed (≈1 s), stable retention capability (>10 4 s), and reliable switching properties. A quantitative study of the WG 3 NSs morphology reveals that enhanced memory performance is attributed to the improved charge trapping/charge-exciton annihilation efficiency induced by increased contact area between the WG 3 NSs and pentacene layer. This versatile solution-processing approach to preparing WG 3 NSs arrays as charge trapping sites allows for fabrication of high-performance nonvolatile OFET memory devices, which could be applicable to a wide range of WBG organic semiconductor materials. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Thin PZT-Based Ferroelectric Capacitors on Flexible Silicon for Nonvolatile Memory Applications

    KAUST Repository

    Ghoneim, Mohamed T.

    2015-04-24

    A flexible version of traditional thin lead zirconium titanate ((Pb1.1Zr0.48Ti0.52O3)-(PZT)) based ferroelectric random access memory (FeRAM) on silicon shows record performance in flexible arena. The thin PZT layer requires lower operational voltages to achieve coercive electric fields, reduces the sol-gel coating cycles required (i.e., more cost-effective), and, fabrication wise, is more suitable for further scaling of lateral dimensions to the nano-scale due to the larger feature size-to-depth aspect ratio (critical for ultra-high density non-volatile memory applications). Utilizing the inverse proportionality between substrate\\'s thickness and its flexibility, traditional PZT based FeRAM on silicon is transformed through a transfer-less manufacturable process into a flexible form that matches organic electronics\\' flexibility while preserving the superior performance of silicon CMOS electronics. Each memory cell in a FeRAM array consists of two main elements; a select/access transistor, and a storage ferroelectric capacitor. Flexible transistors on silicon have already been reported. In this work, we focus on the storage ferroelectric capacitors, and report, for the first time, its performance after transformation into a flexible version, and assess its key memory parameters while bent at 0.5 cm minimum bending radius.

  13. Fabrication of Nonvolatile Memory Effects in High-k Dielectric Thin Films Using Electron Irradiation

    International Nuclear Information System (INIS)

    Park, Chanrock; Cho, Daehee; Kim, Jeongeun; Hwang, Jinha

    2010-01-01

    Electron Irradiation can be applied towards nano-floating gate memories which are recognized as one of the next-generation nonvolatile memory semiconductors. NFGMs can overcome the preexisting limitations encountered in Dynamic Random Access Memories and Flash memories with the excellent advantages, i. e. high-density information storage, high response speed, high compactness, etc. The traditional nano-floating gate memories are fabricated through multi-layered nano structures of the dissimilar materials where the charge-trapping portions are sandwiched into the high-k dielectrics. However, this work reports the unique nonvolatile responses in single-layered high-k dielectric thin films if irradiated with highly accelerated electron beams. The implications of the electron irradiation will be discussed towards high-performance nano-floating gate memories

  14. Overview of radiation effects on emerging non-volatile memory technologies

    Directory of Open Access Journals (Sweden)

    Fetahović Irfan S.

    2017-01-01

    Full Text Available In this paper we give an overview of radiation effects in emergent, non-volatile memory technologies. Investigations into radiation hardness of resistive random access memory, ferroelectric random access memory, magneto-resistive random access memory, and phase change memory are presented in cases where these memory devices were subjected to different types of radiation. The obtained results proved high radiation tolerance of studied devices making them good candidates for application in radiation-intensive environments. [Project of the Serbian Ministry of Education, Science and Technological Development, Grant no. 171007

  15. Controlled data storage for non-volatile memory cells embedded in nano magnetic logic

    Directory of Open Access Journals (Sweden)

    Fabrizio Riente

    2017-05-01

    Full Text Available Among the beyond-CMOS technologies, perpendicular Nano Magnetic Logic (pNML is a promising candidate due to its low power consumption, its non-volatility and its monolithic 3D integrability, which makes it possible to integrate memory and logic into the same device by exploiting the interaction of bi-stable nanomagnets with perpendicular magnetic anisotropy. Logic computation and signal synchronization are achieved by focus ion beam irradiation and by pinning domain walls in magnetic notches. However, in realistic circuits, the information storage and their read-out are crucial issues, often ignored in the exploration of beyond-CMOS devices. In this paper we address these issues by experimentally demonstrating a pNML memory element, whose read and write operations can be controlled by two independent pulsed currents. Our results prove the correct behavior of the proposed structure that enables high density memory embedded in the logic plane of 3D-integrated pNML circuits.

  16. Physical principles and current status of emerging non-volatile solid state memories

    Science.gov (United States)

    Wang, L.; Yang, C.-H.; Wen, J.

    2015-07-01

    Today the influence of non-volatile solid-state memories on persons' lives has become more prominent because of their non-volatility, low data latency, and high robustness. As a pioneering technology that is representative of non-volatile solidstate memories, flash memory has recently seen widespread application in many areas ranging from electronic appliances, such as cell phones and digital cameras, to external storage devices such as universal serial bus (USB) memory. Moreover, owing to its large storage capacity, it is expected that in the near future, flash memory will replace hard-disk drives as a dominant technology in the mass storage market, especially because of recently emerging solid-state drives. However, the rapid growth of the global digital data has led to the need for flash memories to have larger storage capacity, thus requiring a further downscaling of the cell size. Such a miniaturization is expected to be extremely difficult because of the well-known scaling limit of flash memories. It is therefore necessary to either explore innovative technologies that can extend the areal density of flash memories beyond the scaling limits, or to vigorously develop alternative non-volatile solid-state memories including ferroelectric random-access memory, magnetoresistive random-access memory, phase-change random-access memory, and resistive random-access memory. In this paper, we review the physical principles of flash memories and their technical challenges that affect our ability to enhance the storage capacity. We then present a detailed discussion of novel technologies that can extend the storage density of flash memories beyond the commonly accepted limits. In each case, we subsequently discuss the physical principles of these new types of non-volatile solid-state memories as well as their respective merits and weakness when utilized for data storage applications. Finally, we predict the future prospects for the aforementioned solid-state memories for

  17. The influence of thickness on memory characteristic based on nonvolatile tuning behavior in poly(N-vinylcarbazole) films

    International Nuclear Information System (INIS)

    Sun, Yanmei; Ai, Chunpeng; Lu, Junguo; Li, Lei; Wen, Dianzhong; Bai, Xuduo

    2016-01-01

    The memory characteristic based on nonvolatile tuning behavior in indium tin oxide/poly(N-vinylcarbazole)/aluminum (ITO/PVK/Al) was investigated, the different memory behaviors were first observed in PVK film as the film thickness changing. By control of PVK film thickness with different spinning speeds, the nonvolatile behavior of ITO/PVK/Al sandwich structure can be tuned in a controlled manner. Obviously different nonvolatile behaviors, such as (i) flash memory behavior and (ii) write-once-read-many times (WORM) memory behavior are from the current–voltage (I–V) characteristics of the PVK films. The results suggest that the film thickness plays a key part in determining the memory type of the PVK. - Highlights: • The different memory behaviors were observed in PVK film. • The nonvolatile behavior of ITO/PVK/Al sandwich structure can be tuned. • The film thickness plays a key part in determining the memory type of the PVK.

  18. Low-power non-volatile spintronic memory: STT-RAM and beyond

    International Nuclear Information System (INIS)

    Wang, K L; Alzate, J G; Khalili Amiri, P

    2013-01-01

    The quest for novel low-dissipation devices is one of the most critical for the future of semiconductor technology and nano-systems. The development of a low-power, universal memory will enable a new paradigm of non-volatile computation. Here we consider STT-RAM as one of the emerging candidates for low-power non-volatile memory. We show different configurations for STT memory and demonstrate strategies to optimize key performance parameters such as switching current and energy. The energy and scaling limits of STT-RAM are discussed, leading us to argue that alternative writing mechanisms may be required to achieve ultralow power dissipation, a necessary condition for direct integration with CMOS at the gate level for non-volatile logic purposes. As an example, we discuss the use of the giant spin Hall effect as a possible alternative to induce magnetization reversal in magnetic tunnel junctions using pure spin currents. Further, we concentrate on magnetoelectric effects, where electric fields are used instead of spin-polarized currents to manipulate the nanomagnets, as another candidate solution to address the challenges of energy efficiency and density. The possibility of an electric-field-controlled magnetoelectric RAM as a promising candidate for ultralow-power non-volatile memory is discussed in the light of experimental data demonstrating voltage-induced switching of the magnetization and reorientation of the magnetic easy axis by electric fields in nanomagnets. (paper)

  19. High-performance non-volatile organic ferroelectric memory on banknotes

    KAUST Repository

    Khan, Yasser

    2012-03-21

    High-performance non-volatile polymer ferroelectric memory are fabricated on banknotes using poly(vinylidene fluoride trifluoroethylene). The devices show excellent performance with high remnant polarization, low operating voltages, low leakage, high mobility, and long retention times. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Low-temperature process steps for realization of non-volatile memory devices

    NARCIS (Netherlands)

    Brunets, I.; Boogaard, A.; Aarnink, Antonius A.I.; Kovalgin, Alexeij Y.; Wolters, Robertus A.M.; Holleman, J.; Schmitz, Jurriaan

    2007-01-01

    In this work, the low-temperature process steps required for the realization of nano-crystal non-volatile memory cells are discussed. An amorphous silicon film, crystallized using a diode pumped solid state green laser irradiating at 532 nm, is proposed as an active layer. The deposition of the

  1. High-performance non-volatile organic ferroelectric memory on banknotes.

    Science.gov (United States)

    Khan, M A; Bhansali, Unnat S; Alshareef, H N

    2012-04-24

    High-performance non-volatile polymer ferroelectric memory are fabricated on banknotes using poly(vinylidene fluoride trifluoroethylene). The devices show excellent performance with high remnant polarization, low operating voltages, low leakage, high mobility, and long retention times. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Phosphorene/ZnO Nano-Heterojunctions for Broadband Photonic Nonvolatile Memory Applications.

    Science.gov (United States)

    Hu, Liang; Yuan, Jun; Ren, Yi; Wang, Yan; Yang, Jia-Qin; Zhou, Ye; Zeng, Yu-Jia; Han, Su-Ting; Ruan, Shuangchen

    2018-06-10

    High-performance photonic nonvolatile memory combining photosensing and data storage with low power consumption ensures the energy efficiency of computer systems. This study first reports in situ derived phosphorene/ZnO hybrid heterojunction nanoparticles and their application in broadband-response photonic nonvolatile memory. The photonic nonvolatile memory consistently exhibits broadband response from ultraviolet (380 nm) to near infrared (785 nm), with controllable shifts of the SET voltage. The broadband resistive switching is attributed to the enhanced photon harvesting, a fast exciton separation, as well as the formation of an oxygen vacancy filament in the nano-heterojunction. In addition, the device exhibits an excellent stability under air exposure compared with reported pristine phosphorene-based nonvolatile memory. The superior antioxidation capacity is believed to originate from the fast transfer of lone-pair electrons of phosphorene. The unique assembly of phosphorene/ZnO nano-heterojunctions paves the way toward multifunctional broadband-response data-storage techniques. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Overview of one transistor type of hybrid organic ferroelectric non-volatile memory

    Institute of Scientific and Technical Information of China (English)

    Young; Tea; Chun; Daping; Chu

    2015-01-01

    Organic ferroelectric memory devices based on field effect transistors that can be configured between two stable states of on and off have been widely researched as the next generation data storage media in recent years.This emerging type of memory devices can lead to a new instrument system as a potential alternative to previous non-volatile memory building blocks in future processing units because of their numerous merits such as cost-effective process,simple structure and freedom in substrate choices.This bi-stable non-volatile memory device of information storage has been investigated using several organic or inorganic semiconductors with organic ferroelectric polymer materials.Recent progresses in this ferroelectric memory field,hybrid system have attracted a lot of attention due to their excellent device performance in comparison with that of all organic systems.In this paper,a general review of this type of ferroelectric non-volatile memory is provided,which include the device structure,organic ferroelectric materials,electrical characteristics and working principles.We also present some snapshots of our previous study on hybrid ferroelectric memories including our recent work based on zinc oxide nanowire channels.

  4. Organic non-volatile memories from ferroelectric phase-separated blends

    Science.gov (United States)

    Asadi, Kamal; de Leeuw, Dago M.; de Boer, Bert; Blom, Paul W. M.

    2008-07-01

    New non-volatile memories are being investigated to keep up with the organic-electronics road map. Ferroelectric polarization is an attractive physical property as the mechanism for non-volatile switching, because the two polarizations can be used as two binary levels. However, in ferroelectric capacitors the read-out of the polarization charge is destructive. The functionality of the targeted memory should be based on resistive switching. In inorganic ferroelectrics conductivity and ferroelectricity cannot be tuned independently. The challenge is to develop a storage medium in which the favourable properties of ferroelectrics such as bistability and non-volatility can be combined with the beneficial properties provided by semiconductors such as conductivity and rectification. Here we present an integrated solution by blending semiconducting and ferroelectric polymers into phase-separated networks. The polarization field of the ferroelectric modulates the injection barrier at the semiconductor-metal contact. The combination of ferroelectric bistability with (semi)conductivity and rectification allows for solution-processed non-volatile memory arrays with a simple cross-bar architecture that can be read out non-destructively. The concept of an electrically tunable injection barrier as presented here is general and can be applied to other electronic devices such as light-emitting diodes with an integrated on/off switch.

  5. High-Speed Non-Volatile Optical Memory: Achievements and Challenges

    Directory of Open Access Journals (Sweden)

    Vadym Zayets

    2017-01-01

    Full Text Available We have proposed, fabricated, and studied a new design of a high-speed optical non-volatile memory. The recoding mechanism of the proposed memory utilizes a magnetization reversal of a nanomagnet by a spin-polarized photocurrent. It was shown experimentally that the operational speed of this memory may be extremely fast above 1 TBit/s. The challenges to realize both a high-speed recording and a high-speed reading are discussed. The memory is compact, integratable, and compatible with present semiconductor technology. If realized, it will advance data processing and computing technology towards a faster operation speed.

  6. A review of emerging non-volatile memory (NVM) technologies and applications

    Science.gov (United States)

    Chen, An

    2016-11-01

    This paper will review emerging non-volatile memory (NVM) technologies, with the focus on phase change memory (PCM), spin-transfer-torque random-access-memory (STTRAM), resistive random-access-memory (RRAM), and ferroelectric field-effect-transistor (FeFET) memory. These promising NVM devices are evaluated in terms of their advantages, challenges, and applications. Their performance is compared based on reported parameters of major industrial test chips. Memory selector devices and cell structures are discussed. Changing market trends toward low power (e.g., mobile, IoT) and data-centric applications create opportunities for emerging NVMs. High-performance and low-cost emerging NVMs may simplify memory hierarchy, introduce non-volatility in logic gates and circuits, reduce system power, and enable novel architectures. Storage-class memory (SCM) based on high-density NVMs could fill the performance and density gap between memory and storage. Some unique characteristics of emerging NVMs can be utilized for novel applications beyond the memory space, e.g., neuromorphic computing, hardware security, etc. In the beyond-CMOS era, emerging NVMs have the potential to fulfill more important functions and enable more efficient, intelligent, and secure computing systems.

  7. Integration of ammonia-plasma-functionalized graphene nanodiscs as charge trapping centers for nonvolatile memory applications

    KAUST Repository

    Wang, Jer-Chyi

    2016-11-23

    Graphene nanodiscs (GNDs), functionalized using NH3 plasma, as charge trapping sites (CTSs) for non-volatile memory applications have been investigated in this study. The fabrication process relies on the patterning of Au nanoparticles (Au-NPs), whose thicknesses are tuned to adjust the GND density and size upon etching. A GND density as high as 8 × 1011 cm−2 and a diameter of approximately 20 nm are achieved. The functionalization of GNDs by NH3 plasma creates Nsingle bondH+ functional groups that act as CTSs, as observed by Raman and Fourier transform infrared spectroscopy. This inherently enhances the density of CTSs in the GNDs, as a result, the memory window becomes more than 2.4 V and remains stable after 104 operating cycles. The charge loss is less than 10% for a 10-year data retention testing, making this low-temperature process suitable for low-cost non-volatile memory applications on flexible substrates.

  8. Future Trend of Non-Volatile Semiconductor Memory and Feasibility Study of BiCS Type Stacked Structure

    OpenAIRE

    渡辺, 重佳

    2009-01-01

    Future trend of non-volatile semiconductor memory—FeRAM, MRAM, PRAM, ReRAM—compared with NAND typeflash memory has been described based on its history, application and performance. In the realistic point of view,FeRAM and MRAM are suitable for embedded memory and main memory, and PRAM and ReRAM are promising candidatesfor main memory and mass-storage memory for multimedia. Furthermore, the feasibility study of aggressiveultra-low-cost high-speed universal non-volatile semiconductor memory has...

  9. Scaling dependence of memory windows and different carrier charging behaviors in Si nanocrystal nonvolatile memory devices

    Science.gov (United States)

    Yu, Jie; Chen, Kun-ji; Ma, Zhong-yuan; Zhang, Xin-xin; Jiang, Xiao-fan; Wu, Yang-qing; Huang, Xin-fan; Oda, Shunri

    2016-09-01

    Based on the charge storage mode, it is important to investigate the scaling dependence of memory performance in silicon nanocrystal (Si-NC) nonvolatile memory (NVM) devices for its scaling down limit. In this work, we made eight kinds of test key cells with different gate widths and lengths by 0.13-μm node complementary metal oxide semiconductor (CMOS) technology. It is found that the memory windows of eight kinds of test key cells are almost the same of about 1.64 V @ ± 7 V/1 ms, which are independent of the gate area, but mainly determined by the average size (12 nm) and areal density (1.8 × 1011/cm2) of Si-NCs. The program/erase (P/E) speed characteristics are almost independent of gate widths and lengths. However, the erase speed is faster than the program speed of test key cells, which is due to the different charging behaviors between electrons and holes during the operation processes. Furthermore, the data retention characteristic is also independent of the gate area. Our findings are useful for further scaling down of Si-NC NVM devices to improve the performance and on-chip integration. Project supported by the State Key Development Program for Basic Research of China (Grant No. 2010CB934402) and the National Natural Science Foundation of China (Grant Nos. 11374153, 61571221, and 61071008).

  10. Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions

    Science.gov (United States)

    Yau, H. M.; Yan, Z. B.; Chan, N. Y.; Au, K.; Wong, C. M.; Leung, C. W.; Zhang, F. Y.; Gao, X. S.; Dai, J. Y.

    2015-08-01

    Multiferroic tunneling junction based four-state non-volatile memories are very promising for future memory industry since this kind of memories hold the advantages of not only the higher density by scaling down memory cell but also the function of magnetically written and electrically reading. In this work, we demonstrate a success of this four-state memory in a material system of NiFe/BaTiO3/La0.7Sr0.3MnO3 with improved memory characteristics such as lower switching field and larger tunneling magnetoresistance (TMR). Ferroelectric switching induced resistive change memory with OFF/ON ratio of 16 and 0.3% TMR effect have been achieved in this multiferroic tunneling structure.

  11. Review on Physically Flexible Nonvolatile Memory for Internet of Everything Electronics

    KAUST Repository

    Ghoneim, Mohamed T.

    2015-07-23

    Solid-state memory is an essential component of the digital age. With advancements in healthcare technology and the Internet of Things (IoT), the demand for ultra-dense, ultra-low-power memory is increasing. In this review, we present a comprehensive perspective on the most notable approaches to the fabrication of physically flexible memory devices. With the future goal of replacing traditional mechanical hard disks with solid-state storage devices, a fully flexible electronic system will need two basic devices: transistors and nonvolatile memory. Transistors are used for logic operations and gating memory arrays, while nonvolatile memory (NVM) devices are required for storing information in the main memory and cache storage. Since the highest density of transistors and storage structures is manifested in memories, the focus of this review is flexible NVM. Flexible NVM components are discussed in terms of their functionality, performance metrics, and reliability aspects, all of which are critical components for NVM technology to be part of mainstream consumer electronics, IoT, and advanced healthcare devices. Finally, flexible NVMs are benchmarked and future prospects are provided.

  12. Review on Physically Flexible Nonvolatile Memory for Internet of Everything Electronics

    Directory of Open Access Journals (Sweden)

    Mohamed T. Ghoneim

    2015-07-01

    Full Text Available Solid-state memory is an essential component of the digital age. With advancements in healthcare technology and the Internet of Things (IoT, the demand for ultra-dense, ultra-low-power memory is increasing. In this review, we present a comprehensive perspective on the most notable approaches to the fabrication of physically flexible memory devices. With the future goal of replacing traditional mechanical hard disks with solid-state storage devices, a fully flexible electronic system will need two basic devices: transistors and nonvolatile memory. Transistors are used for logic operations and gating memory arrays, while nonvolatile memory (NVM devices are required for storing information in the main memory and cache storage. Since the highest density of transistors and storage structures is manifested in memories, the focus of this review is flexible NVM. Flexible NVM components are discussed in terms of their functionality, performance metrics, and reliability aspects, all of which are critical components for NVM technology to be part of mainstream consumer electronics, IoT, and advanced healthcare devices. Finally, flexible NVMs are benchmarked and future prospects are provided.

  13. Review on Physically Flexible Nonvolatile Memory for Internet of Everything Electronics

    KAUST Repository

    Ghoneim, Mohamed T.; Hussain, Muhammad Mustafa

    2015-01-01

    Solid-state memory is an essential component of the digital age. With advancements in healthcare technology and the Internet of Things (IoT), the demand for ultra-dense, ultra-low-power memory is increasing. In this review, we present a comprehensive perspective on the most notable approaches to the fabrication of physically flexible memory devices. With the future goal of replacing traditional mechanical hard disks with solid-state storage devices, a fully flexible electronic system will need two basic devices: transistors and nonvolatile memory. Transistors are used for logic operations and gating memory arrays, while nonvolatile memory (NVM) devices are required for storing information in the main memory and cache storage. Since the highest density of transistors and storage structures is manifested in memories, the focus of this review is flexible NVM. Flexible NVM components are discussed in terms of their functionality, performance metrics, and reliability aspects, all of which are critical components for NVM technology to be part of mainstream consumer electronics, IoT, and advanced healthcare devices. Finally, flexible NVMs are benchmarked and future prospects are provided.

  14. Scalable printed electronics: an organic decoder addressing ferroelectric non-volatile memory

    Science.gov (United States)

    Ng, Tse Nga; Schwartz, David E.; Lavery, Leah L.; Whiting, Gregory L.; Russo, Beverly; Krusor, Brent; Veres, Janos; Bröms, Per; Herlogsson, Lars; Alam, Naveed; Hagel, Olle; Nilsson, Jakob; Karlsson, Christer

    2012-01-01

    Scalable circuits of organic logic and memory are realized using all-additive printing processes. A 3-bit organic complementary decoder is fabricated and used to read and write non-volatile, rewritable ferroelectric memory. The decoder-memory array is patterned by inkjet and gravure printing on flexible plastics. Simulation models for the organic transistors are developed, enabling circuit designs tolerant of the variations in printed devices. We explain the key design rules in fabrication of complex printed circuits and elucidate the performance requirements of materials and devices for reliable organic digital logic. PMID:22900143

  15. Ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory

    International Nuclear Information System (INIS)

    Han, Jinhua; Wang, Wei; Ying, Jun; Xie, Wenfa

    2014-01-01

    An ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory was demonstrated, with discrete distributed gold nanoparticles, tetratetracontane (TTC), pentacene as the floating-gate layer, tunneling layer, and active layer, respectively. The electron traps at the TTC/pentacene interface were significantly suppressed, which resulted in an ambipolar operation in present memory. As both electrons and holes were supplied in the channel and trapped in the floating-gate by programming/erasing operations, respectively, i.e., one type of charge carriers was used to overwrite the other, trapped, one, a large memory window, extending on both sides of the initial threshold voltage, was realized

  16. Ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory

    Energy Technology Data Exchange (ETDEWEB)

    Han, Jinhua; Wang, Wei, E-mail: wwei99@jlu.edu.cn; Ying, Jun; Xie, Wenfa [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012 (China)

    2014-01-06

    An ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory was demonstrated, with discrete distributed gold nanoparticles, tetratetracontane (TTC), pentacene as the floating-gate layer, tunneling layer, and active layer, respectively. The electron traps at the TTC/pentacene interface were significantly suppressed, which resulted in an ambipolar operation in present memory. As both electrons and holes were supplied in the channel and trapped in the floating-gate by programming/erasing operations, respectively, i.e., one type of charge carriers was used to overwrite the other, trapped, one, a large memory window, extending on both sides of the initial threshold voltage, was realized.

  17. Preparation of NiFe binary alloy nanocrystals for nonvolatile memory applications

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    In this work,an idea which applies binary alloy nanocrystal floating gate to nonvolatile memory application was introduced.The relationship between binary alloy’s work function and its composition was discussed theoretically.A nanocrystal floating gate structure with NiFe nanocrystals embedded in SiO2 dielectric layers was fabricated by magnetron sputtering.The micro-structure and composition deviation of the prepared NiFe nanocrystals were also investigated by TEM and EDS.

  18. Metal-organic molecular device for non-volatile memory storage

    International Nuclear Information System (INIS)

    Radha, B.; Sagade, Abhay A.; Kulkarni, G. U.

    2014-01-01

    Non-volatile memory devices have been of immense research interest for their use in active memory storage in powered off-state of electronic chips. In literature, various molecules and metal compounds have been investigated in this regard. Molecular memory devices are particularly attractive as they offer the ease of storing multiple memory states in a unique way and also represent ubiquitous choice for miniaturized devices. However, molecules are fragile and thus the device breakdown at nominal voltages during repeated cycles hinders their practical applicability. Here, in this report, a synergetic combination of an organic molecule and an inorganic metal, i.e., a metal-organic complex, namely, palladium hexadecylthiolate is investigated for memory device characteristics. Palladium hexadecylthiolate following partial thermolysis is converted to a molecular nanocomposite of Pd(II), Pd(0), and long chain hydrocarbons, which is shown to exhibit non-volatile memory characteristics with exceptional stability and retention. The devices are all solution-processed and the memory action stems from filament formation across the pre-formed cracks in the nanocomposite film.

  19. BLACKCOMB2: Hardware-software co-design for non-volatile memory in exascale systems

    Energy Technology Data Exchange (ETDEWEB)

    Mudge, Trevor [Univ. of Michigan, Ann Arbor, MI (United States)

    2017-12-15

    This work was part of a larger project, Blackcomb2, centered at Oak Ridge National Labs (Jeff Vetter PI) to investigate the opportunities for replacing or supplementing DRAM main memory with nonvolatile memory (NVmemory) in Exascale memory systems. The goal was to reduce the energy consumed by in future supercomputer memory systems and to improve their resiliency. Building on the accomplishments of the original Blackcomb Project, funded in 2010, the goal for Blackcomb2 was to identify, evaluate, and optimize the most promising emerging memory technologies, architecture hardware and software technologies, which are essential to provide the necessary memory capacity, performance, resilience, and energy efficiency in Exascale systems. Capacity and energy are the key drivers.

  20. Non-volatile flash memory with discrete bionanodot floating gate assembled by protein template

    International Nuclear Information System (INIS)

    Miura, Atsushi; Yamashita, Ichiro; Uraoka, Yukiharu; Fuyuki, Takashi; Tsukamoto, Rikako; Yoshii, Shigeo

    2008-01-01

    We demonstrated non-volatile flash memory fabrication by utilizing uniformly sized cobalt oxide (Co 3 O 4 ) bionanodot (Co-BND) architecture assembled by a cage-shaped supramolecular protein template. A fabricated high-density Co-BND array was buried in a metal-oxide-semiconductor field-effect-transistor (MOSFET) structure to use as the charge storage node of a floating nanodot gate memory. We observed a clockwise hysteresis in the drain current-gate voltage characteristics of fabricated BND-embedded MOSFETs. Observed hysteresis obviously indicates a memory operation of Co-BND-embedded MOSFETs due to the charge confinement in the embedded BND and successful functioning of embedded BNDs as the charge storage nodes of the non-volatile flash memory. Fabricated Co-BND-embedded MOSFETs showed good memory properties such as wide memory windows, long charge retention and high tolerance to repeated write/erase operations. A new pathway for device fabrication by utilizing the versatile functionality of biomolecules is presented

  1. Non-volatile main memory management methods based on a file system.

    Science.gov (United States)

    Oikawa, Shuichi

    2014-01-01

    There are upcoming non-volatile (NV) memory technologies that provide byte addressability and high performance. PCM, MRAM, and STT-RAM are such examples. Such NV memory can be used as storage because of its data persistency without power supply while it can be used as main memory because of its high performance that matches up with DRAM. There are a number of researches that investigated its uses for main memory and storage. They were, however, conducted independently. This paper presents the methods that enables the integration of the main memory and file system management for NV memory. Such integration makes NV memory simultaneously utilized as both main memory and storage. The presented methods use a file system as their basis for the NV memory management. We implemented the proposed methods in the Linux kernel, and performed the evaluation on the QEMU system emulator. The evaluation results show that 1) the proposed methods can perform comparably to the existing DRAM memory allocator and significantly better than the page swapping, 2) their performance is affected by the internal data structures of a file system, and 3) the data structures appropriate for traditional hard disk drives do not always work effectively for byte addressable NV memory. We also performed the evaluation of the effects caused by the longer access latency of NV memory by cycle-accurate full-system simulation. The results show that the effect on page allocation cost is limited if the increase of latency is moderate.

  2. The charge storage characteristics of ZrO2 nanocrystallite-based charge trap nonvolatile memory

    International Nuclear Information System (INIS)

    Tang Zhen-Jie; Li Rong; Yin Jiang

    2013-01-01

    ZrO 2 nanocrystallite-based charge trap flash memory capacitors incorporating a (ZrO 2 ) 0.6 (SiO 2 ) 0.4 pseudobinary high-k oxide film as the charge trapping layer were prepared and investigated. The precipitation reaction in the charge trapping layer, forming ZrO 2 nanocrystallites during rapid thermal annealing, was investigated by transmission electron microscopy and X-ray diffraction. It was observed that a ZrO 2 nanocrystallite-based memory capacitor after post-annealing at 850 °C for 60 s exhibits a maximum memory window of about 6.8 V, good endurance and a low charge loss of ∼25% over a period of 10 years (determined by extrapolating the charge loss curve measured experimentally), even at 85 °C. Such 850 °C-annealed memory capacitors appear to be candidates for future nonvolatile flash memory device applications

  3. Microwave oven fabricated hybrid memristor devices for non-volatile memory storage

    International Nuclear Information System (INIS)

    Verrelli, E; Gray, R J; O’Neill, M; Kemp, N T; Kelly, S M

    2014-01-01

    Novel hybrid non-volatile memories made using an ultra-fast microwave heating method are reported for the first time. The devices, consisting of aligned ZnO nanorods embedded in poly (methyl methacrylate), require no forming step and exhibit reliable and reproducible bipolar resistive switching at low voltages and with low power usage. We attribute these properties to a combination of the high aspect ratio of the nanorods and the polymeric hybrid structure of the device. The extremely easy, fast and low-cost solution based method of fabrication makes possible the simple and quick production of cheap memory cells. (paper)

  4. Memory characteristics of silicon nitride with silicon nanocrystals as a charge trapping layer of nonvolatile memory devices

    International Nuclear Information System (INIS)

    Choi, Sangmoo; Yang, Hyundeok; Chang, Man; Baek, Sungkweon; Hwang, Hyunsang; Jeon, Sanghun; Kim, Juhyung; Kim, Chungwoo

    2005-01-01

    Silicon nitride with silicon nanocrystals formed by low-energy silicon plasma immersion ion implantation has been investigated as a charge trapping layer of a polycrystalline silicon-oxide-nitride-oxide-silicon-type nonvolatile memory device. Compared with the control sample without silicon nanocrystals, silicon nitride with silicon nanocrystals provides excellent memory characteristics, such as larger width of capacitance-voltage hysteresis, higher program/erase speed, and lower charge loss rate at elevated temperature. These improved memory characteristics are derived by incorporation of silicon nanocrystals into the charge trapping layer as additional accessible charge traps with a deeper effective trap energy level

  5. Silicon nano crystal-based non-volatile memory devices

    International Nuclear Information System (INIS)

    Ng, C.Y.; Chen, T.P.; Sreeduth, D.; Chen, Q.; Ding, L.; Du, A.

    2006-01-01

    In this work, we have investigated the performance and reliability of a Flash memory based on silicon nanocrystal synthesized with very-low energy ion beams. The devices are fabricated with a conventional CMOS process and the size of the nanocrystal is ∼ 4 nm as determined from TEM measurement. Electrical properties of the devices with a tunnel oxide of either 3 nm or 7 nm are evaluated. The devices exhibit good endurance up to 10 5 W/E cycles even at the high operation temperature of 85 deg. C for both the tunnel oxide thicknesses. For the thicker tunnel oxide (i.e., the 7-nm tunnel oxide), a good retention performance with an extrapolated 10-year memory window of ∼ 0.3 V (or ∼ 20% of charge lose after 10 years) is achieved. However, ∼ 70% of charge loss after 10 years is expected for the thinner tunnel oxide (i.e., the 3-nm tunnel oxide)

  6. High-Density Stacked Ru Nanocrystals for Nonvolatile Memory Application

    International Nuclear Information System (INIS)

    Ping, Mao; Zhi-Gang, Zhang; Li-Yang, Pan; Jun, Xu; Pei-Yi, Chen

    2009-01-01

    Stacked ruthenium (Ru) nanocrystals (NCs) are formed by rapid thermal annealing for the whole gate stacks and embedded in memory structure, which is compatible with conventional CMOS technology. Ru NCs with high density (3 × 10 12 cm −2 ), small size (2–4 nm) and good uniformity both in aerial distribution and morphology are formed. Attributed to the higher surface trap density, a memory window of 5.2 V is obtained with stacked Ru NCs in comparison to that of 3.5 V with single-layer samples. The stacked Ru NCs device also exhibits much better retention performance because of Coulomb blockade and vertical uniformity between stacked Ru NCs

  7. A Vertical Organic Transistor Architecture for Fast Nonvolatile Memory.

    Science.gov (United States)

    She, Xiao-Jian; Gustafsson, David; Sirringhaus, Henning

    2017-02-01

    A new device architecture for fast organic transistor memory is developed, based on a vertical organic transistor configuration incorporating high-performance ambipolar conjugated polymers and unipolar small molecules as the transport layers, to achieve reliable and fast programming and erasing of the threshold voltage shift in less than 200 ns. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Nonvolatile rewritable memory device based on solution-processable graphene/poly(3-hexylthiophene) nanocomposite

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Li, E-mail: lizhang9@zzu.edu.cn [School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450052 (China); Li, Ye; Shi, Jun [School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450052 (China); Shi, Gaoquan [Department of Chemistry, Tsinghua University, Beijing 100084 (China); Cao, Shaokui, E-mail: Caoshaokui@zzu.edu.cn [School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450052 (China)

    2013-11-01

    An electrically bistable device utilizing a nanocomposite of hexadecylamine-functionalized graphene oxide (HDAGO) with poly(3-hexylthiophene) (P3HT) is demonstrated. The device has an ITO/P3HT-HDAGO/Al sandwich structure, in which the composite film of P3HT-HDAGO was prepared by simple solution phase mixing of the exfoliated HDAGO monolayers with P3HT matrix and a spin-coating method. The memory device exhibits typical bistable electrical switching behavior and a nonvolatile rewritable memory effect, with a turn-on voltage of about 1.5 V and an ON/OFF-state current ratio of 10{sup 5}. Under ambient conditions, both the ON and OFF states are stable under a constant voltage stress or a continuous pulse voltage stress at a read voltage of 1 V. The conduction mechanism is deduced from the modeling of the nature of currents in both states, and the electrical switching behavior can be attributed to the electric-field-induced charge transfer between P3HT and HDAGO nanosheets. - Highlights: • Nonvolatile rewritable memory effect in P3HT–graphene composite is demonstrated. • The memory device was fabricated through a simple solution processing technique. • The device shows a remarkable electrical bistable behavior and excellent stability. • Memory mechanism is deduced from the modeling of the currents in both states.

  9. Design exploration of emerging nano-scale non-volatile memory

    CERN Document Server

    Yu, Hao

    2014-01-01

    This book presents the latest techniques for characterization, modeling and design for nano-scale non-volatile memory (NVM) devices.  Coverage focuses on fundamental NVM device fabrication and characterization, internal state identification of memristic dynamics with physics modeling, NVM circuit design, and hybrid NVM memory system design-space optimization. The authors discuss design methodologies for nano-scale NVM devices from a circuits/systems perspective, including the general foundations for the fundamental memristic dynamics in NVM devices.  Coverage includes physical modeling, as well as the development of a platform to explore novel hybrid CMOS and NVM circuit and system design.   • Offers readers a systematic and comprehensive treatment of emerging nano-scale non-volatile memory (NVM) devices; • Focuses on the internal state of NVM memristic dynamics, novel NVM readout and memory cell circuit design, and hybrid NVM memory system optimization; • Provides both theoretical analysis and pr...

  10. Nonvolatile rewritable memory device based on solution-processable graphene/poly(3-hexylthiophene) nanocomposite

    International Nuclear Information System (INIS)

    Zhang, Li; Li, Ye; Shi, Jun; Shi, Gaoquan; Cao, Shaokui

    2013-01-01

    An electrically bistable device utilizing a nanocomposite of hexadecylamine-functionalized graphene oxide (HDAGO) with poly(3-hexylthiophene) (P3HT) is demonstrated. The device has an ITO/P3HT-HDAGO/Al sandwich structure, in which the composite film of P3HT-HDAGO was prepared by simple solution phase mixing of the exfoliated HDAGO monolayers with P3HT matrix and a spin-coating method. The memory device exhibits typical bistable electrical switching behavior and a nonvolatile rewritable memory effect, with a turn-on voltage of about 1.5 V and an ON/OFF-state current ratio of 10 5 . Under ambient conditions, both the ON and OFF states are stable under a constant voltage stress or a continuous pulse voltage stress at a read voltage of 1 V. The conduction mechanism is deduced from the modeling of the nature of currents in both states, and the electrical switching behavior can be attributed to the electric-field-induced charge transfer between P3HT and HDAGO nanosheets. - Highlights: • Nonvolatile rewritable memory effect in P3HT–graphene composite is demonstrated. • The memory device was fabricated through a simple solution processing technique. • The device shows a remarkable electrical bistable behavior and excellent stability. • Memory mechanism is deduced from the modeling of the currents in both states

  11. Intrinsic Ge nanowire nonvolatile memory based on a simple core–shell structure

    International Nuclear Information System (INIS)

    Chen, Wen-Hua; Liu, Chang-Hai; Li, Qin-Liang; Sun, Qi-Jun; Liu, Jie; Gao, Xu; Sun, Xuhui; Wang, Sui-Dong

    2014-01-01

    Intrinsic Ge nanowires (NWs) with a Ge core covered by a thick Ge oxide shell are utilized to achieve nanoscale field-effect transistor nonvolatile memories, which show a large memory window and a high ON/OFF ratio with good retention. The retainable surface charge trapping is considered to be responsible for the memory effect, and the Ge oxide shell plays a key role as the insulating tunneling dielectric which must be thick enough to prevent stored surface charges from leaking out. Annealing the device in air is demonstrated to be a simple and effective way to attain thick Ge oxide on the Ge NW surface, and the Ge-NW-based memory corresponding to thick Ge oxide exhibits a much better retention capability compared with the case of thin Ge oxide. (paper)

  12. Comparison of discrete-storage nonvolatile memories: advantage of hybrid method for fabrication of Au nanocrystal nonvolatile memory

    International Nuclear Information System (INIS)

    Wang Qin; Jia Rui; Guan Weihua; Li Weilong; Liu Qi; Hu Yuan; Long Shibing; Chen Baoqin; Liu Ming; Ye Tianchun; Lu Wensheng; Jiang Long

    2008-01-01

    In this paper, the memory characteristics of two kinds of metal-oxide-semiconductor (MOS) capacitors embedded with Au nanocrytals are investigated: hybrid MOS with nanocrystals (NCs) fabricated by chemical syntheses and rapid thermal annealing (RTA) MOS with NCs fabricated by RTA. For both kinds of devices, the capacitance versus voltage (C-V) curves clearly indicate the charge storage in the NCs. The hybrid MOS, however, shows a larger memory window, as compared with RTA MOS. The retention characteristics of the two MOS devices are also investigated. The capacitance versus time (C-t) measurement shows that the hybrid MOS capacitor embedded with Au nanocrystals has a longer retention time. The mechanism of longer retention time for hybrid MOS capacitor is qualitatively discussed

  13. Zinc Cadmium Selenide Cladded Quantum Dot Based Electroluminescent and Nonvolatile Memory Devices

    Science.gov (United States)

    Al-Amody, Fuad H.

    This dissertation presents electroluminescent (EL) and nonvolatile memory devices fabricated using pseudomorphic ZnCdSe-based cladded quantum dots (QDs). These dots were grown using our own in-school built novel reactor. The EL device was fabricated on a substrate of ITO (indium tin oxide) coated glass with the quantum dots sandwiched between anode and cathode contacts with a small barrier layer on top of the QDs. The importance of these cladded dots is to increase the quantum yield of device. This device is unique as they utilize quantum dots that are pseudomorphic (nearly lattice-matched core and the shell of the dot). In the case of floating quantum dot gate nonvolatile memory, cladded ZnCdSe quantum dots are deposited on single crystalline gate insulator (ZnMgS/ZnMgSe), which is grown using metal-organic chemical vapor deposition (MOCVD). The control gate dielectric layer of the nonvolatile memory is Si3N4 or SiO2 and is grown using plasma enhanced chemical vapor deposition (PECVD). The cladded dots are grown using an improved methodology of photo-assisted microwave plasma metal-organic chemical vapor deposition (PMP-MOCVD) enhanced reactor. The cladding composition of the core and shell of the dots was engineered by the help of ultraviolet light which changed the incorporation of zinc (and hence composition of ZnCdSe). This makes ZnxCd1--xSe-ZnyCd1--y Se QDs to have a low composition of zinc in the core than the cladding (x

  14. Negative effect of Au nanoparticles on an IGZO TFT-based nonvolatile memory device

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Myunghoon; Yoo, Gwangwe; Lee, Jongtaek; Jeong, Seokwon; Roh, Yonghan; Park, Jinhong; Kwon, Namyong [Sungkyunkwan University, Suwon (Korea, Republic of); Jung, Wooshik [Stanford University, Stanford, CA (United States)

    2014-02-15

    In this letter, the electrical characteristics of nonvolatile memory devices based on back gate type indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) are investigated in terms of the Au nanoparticles (NPs) employed in the floating gate-stack of the device. The size of the Au NPs is controlled using a by 500 .deg. C annealing process after the Au thin-film deposition. The size and the roughness of the Au NPs were observed by using scanning electron microscopy, atomic force microscopy, and transmission electron microscopy. In order to analyze the electrical properties according to Au NP size, we measured the current-voltage (I{sub D}-V{sub G}) characteristics of the nonvolatile memory devices fabricated without Au NPs and with Au NPs of various sizes. The size of the Au NP increased, so did the surface roughness of the gate. This resulted in increased carrier scattering, which subsequently degraded the on-current of the memory device. In addition, inter-diffusion between the Au and the α-IGZO through the non-uniform Al{sub 2}O{sub 3} tunneling layer seemed to further degrade the device performance.

  15. Flexible All-Inorganic Perovskite CsPbBr3 Nonvolatile Memory Device.

    Science.gov (United States)

    Liu, Dongjue; Lin, Qiqi; Zang, Zhigang; Wang, Ming; Wangyang, Peihua; Tang, Xiaosheng; Zhou, Miao; Hu, Wei

    2017-02-22

    All-inorganic perovskite CsPbX 3 (X = Cl, Br, or I) is widely used in a variety of photoelectric devices such as solar cells, light-emitting diodes, lasers, and photodetectors. However, studies to understand the flexible CsPbX 3 electrical application are relatively scarce, mainly due to the limitations of the low-temperature fabricating process. In this study, all-inorganic perovskite CsPbBr 3 films were successfully fabricated at 75 °C through a two-step method. The highly crystallized films were first employed as a resistive switching layer in the Al/CsPbBr 3 /PEDOT:PSS/ITO/PET structure for flexible nonvolatile memory application. The resistive switching operations and endurance performance demonstrated the as-prepared flexible resistive random access memory devices possess reproducible and reliable memory characteristics. Electrical reliability and mechanical stability of the nonvolatile device were further tested by the robust current-voltage curves under different bending angles and consecutive flexing cycles. Moreover, a model of the formation and rupture of filaments through the CsPbBr 3 layer was proposed to explain the resistive switching effect. It is believed that this study will offer a new setting to understand and design all-inorganic perovskite materials for future stable flexible electronic devices.

  16. A memristor-based nonvolatile latch circuit

    International Nuclear Information System (INIS)

    Robinett, Warren; Pickett, Matthew; Borghetti, Julien; Xia Qiangfei; Snider, Gregory S; Medeiros-Ribeiro, Gilberto; Williams, R Stanley

    2010-01-01

    Memristive devices, which exhibit a dynamical conductance state that depends on the excitation history, can be used as nonvolatile memory elements by storing information as different conductance states. We describe the implementation of a nonvolatile synchronous flip-flop circuit that uses a nanoscale memristive device as the nonvolatile memory element. Controlled testing of the circuit demonstrated successful state storage and restoration, with an error rate of 0.1%, during 1000 power loss events. These results indicate that integration of digital logic devices and memristors could open the way for nonvolatile computation with applications in small platforms that rely on intermittent power sources. This demonstrated feasibility of tight integration of memristors with CMOS (complementary metal-oxide-semiconductor) circuitry challenges the traditional memory hierarchy, in which nonvolatile memory is only available as a large, slow, monolithic block at the bottom of the hierarchy. In contrast, the nonvolatile, memristor-based memory cell can be fast, fine-grained and small, and is compatible with conventional CMOS electronics. This threatens to upset the traditional memory hierarchy, and may open up new architectural possibilities beyond it.

  17. A Survey of Soft-Error Mitigation Techniques for Non-Volatile Memories

    Directory of Open Access Journals (Sweden)

    Sparsh Mittal

    2017-02-01

    Full Text Available Non-volatile memories (NVMs offer superior density and energy characteristics compared to the conventional memories; however, NVMs suffer from severe reliability issues that can easily eclipse their energy efficiency advantages. In this paper, we survey architectural techniques for improving the soft-error reliability of NVMs, specifically PCM (phase change memory and STT-RAM (spin transfer torque RAM. We focus on soft-errors, such as resistance drift and write disturbance, in PCM and read disturbance and write failures in STT-RAM. By classifying the research works based on key parameters, we highlight their similarities and distinctions. We hope that this survey will underline the crucial importance of addressing NVM reliability for ensuring their system integration and will be useful for researchers, computer architects and processor designers.

  18. A direct metal transfer method for cross-bar type polymer non-volatile memory applications

    International Nuclear Information System (INIS)

    Kim, Tae-Wook; Lee, Kyeongmi; Oh, Seung-Hwan; Wang, Gunuk; Kim, Dong-Yu; Jung, Gun-Young; Lee, Takhee

    2008-01-01

    Polymer non-volatile memory devices in 8 x 8 array cross-bar architecture were fabricated by a non-aqueous direct metal transfer (DMT) method using a two-step thermal treatment. Top electrodes with a linewidth of 2 μm were transferred onto the polymer layer by the DMT method. The switching behaviour of memory devices fabricated by the DMT method was very similar to that of devices fabricated by the conventional shadow mask method. The devices fabricated using the DMT method showed three orders of magnitude of on/off ratio with stable resistance switching, demonstrating that the DMT method can be a simple process to fabricate organic memory array devices

  19. Non-volatile memory devices with redox-active diruthenium molecular compound

    International Nuclear Information System (INIS)

    Pookpanratana, S; Zhu, H; Bittle, E G; Richter, C A; Li, Q; Hacker, C A; Natoli, S N; Ren, T

    2016-01-01

    Reduction-oxidation (redox) active molecules hold potential for memory devices due to their many unique properties. We report the use of a novel diruthenium-based redox molecule incorporated into a non-volatile Flash-based memory device architecture. The memory capacitor device structure consists of a Pd/Al 2 O 3 /molecule/SiO 2 /Si structure. The bulky ruthenium redox molecule is attached to the surface by using a ‘click’ reaction and the monolayer structure is characterized by x-ray photoelectron spectroscopy to verify the Ru attachment and molecular density. The ‘click’ reaction is particularly advantageous for memory applications because of (1) ease of chemical design and synthesis, and (2) provides an additional spatial barrier between the oxide/silicon to the diruthenium molecule. Ultraviolet photoelectron spectroscopy data identified the energy of the electronic levels of the surface before and after surface modification. The molecular memory devices display an unsaturated charge storage window attributed to the intrinsic properties of the redox-active molecule. Our findings demonstrate the strengths and challenges with integrating molecular layers within solid-state devices, which will influence the future design of molecular memory devices. (paper)

  20. Physical implication of transition voltage in organic nano-floating-gate nonvolatile memories

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Shun; Gao, Xu, E-mail: wangsd@suda.edu.cn, E-mail: gaoxu@suda.edu.cn; Zhong, Ya-Nan; Zhang, Zhong-Da; Xu, Jian-Long; Wang, Sui-Dong, E-mail: wangsd@suda.edu.cn, E-mail: gaoxu@suda.edu.cn [Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu 215123 (China)

    2016-07-11

    High-performance pentacene-based organic field-effect transistor nonvolatile memories, using polystyrene as a tunneling dielectric and Au nanoparticles as a nano-floating-gate, show parallelogram-like transfer characteristics with a featured transition point. The transition voltage at the transition point corresponds to a threshold electric field in the tunneling dielectric, over which stored electrons in the nano-floating-gate will start to leak out. The transition voltage can be modulated depending on the bias configuration and device structure. For p-type active layers, optimized transition voltage should be on the negative side of but close to the reading voltage, which can simultaneously achieve a high ON/OFF ratio and good memory retention.

  1. Discrete Charge Storage Nonvolatile Memory Based on Si Nanocrystals with Nitridation Treatment

    International Nuclear Information System (INIS)

    Xian-Gao, Zhang; Kun-Ji, Chen; Zhong-Hui, Fang; Xin-Ye, Qian; Guang-Yuan, Liu; Xiao-Fan, Jiang; Zhong-Yuan, Ma; Jun, Xu; Xin-Fan, Huang; Jian-Xin, Ji; Fei, He; Kuang-Bao, Song; Jun, Zhang; Hui, Wan; Rong-Hua, Wang

    2010-01-01

    A nonvolatile memory device with nitrided Si nanocrystals embedded in a Boating gate was fabricated. The uniform Si nanocrystals with high density (3 × 10 11 cm −2 ) were deposited on ultra-thin tunnel oxide layer (∼ 3 nm) and followed by a nitridation treatment in ammonia to form a thin silicon nitride layer on the surface of nanocrystals. A memory window of 2.4 V was obtained and it would be larger than 1.3 V after ten years from the extrapolated retention data. The results can be explained by the nitrogen passivation of the surface traps of Si nanocrystals, which slows the charge loss rate. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  2. Conjugated donor-acceptor-acceptor (D-A-A) molecule for organic nonvolatile resistor memory.

    Science.gov (United States)

    Dong, Lei; Li, Guangwu; Yu, An-Dih; Bo, Zhishan; Liu, Cheng-Liang; Chen, Wen-Chang

    2014-12-01

    A new donor-acceptor-acceptor (D-A-A) type of conjugated molecule, N-(4-(N',N'-diphenyl)phenylamine)-4-(4'-(2,2-dicyanovinyl)phenyl) naphthalene-1,8-dicarboxylic monoimide (TPA-NI-DCN), consisting of triphenylamine (TPA) donors and naphthalimide (NI)/dicyanovinylene (DCN) acceptors was synthesized and characterized. In conjunction with previously reported D-A based materials, the additional DCN moiety attached as end group in the D-A-A configuration can result in a stable charge transfer (CT) and charge-separated state to maintain the ON state current. The vacuum-deposited TPA-NI-DCN device fabricated as an active memory layer was demonstrated to exhibit write-once-read-many (WORM) switching characteristics of organic nonvolatile memory due to the strong polarity of the TPA-NI-DCN moiety. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Emerging Non-volatile Memory Technologies Exploration Flow for Processor Architecture

    OpenAIRE

    senni , sophiane; Torres , Lionel; Sassatelli , Gilles; Gamatié , Abdoulaye; Mussard , Bruno

    2015-01-01

    International audience; Most die area of today's systems-on-chips is occupied by memories. Hence, a significant proportion of total power is spent on memory systems. Moreover, since processing elements have to be fed with instructions and data from memories, memory plays a key role for system's performance. As a result, memories are a critical part of future embedded systems. Continuing CMOS scaling leads to manufacturing constraints and power consumption issues for the current three main mem...

  4. Ferroelectric tunneling element and memory applications which utilize the tunneling element

    Science.gov (United States)

    Kalinin, Sergei V [Knoxville, TN; Christen, Hans M [Knoxville, TN; Baddorf, Arthur P [Knoxville, TN; Meunier, Vincent [Knoxville, TN; Lee, Ho Nyung [Oak Ridge, TN

    2010-07-20

    A tunneling element includes a thin film layer of ferroelectric material and a pair of dissimilar electrically-conductive layers disposed on opposite sides of the ferroelectric layer. Because of the dissimilarity in composition or construction between the electrically-conductive layers, the electron transport behavior of the electrically-conductive layers is polarization dependent when the tunneling element is below the Curie temperature of the layer of ferroelectric material. The element can be used as a basis of compact 1R type non-volatile random access memory (RAM). The advantages include extremely simple architecture, ultimate scalability and fast access times generic for all ferroelectric memories.

  5. Quasi-unipolar pentacene films embedded with fullerene for non-volatile organic transistor memories

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Juhee; Lee, Sungpyo; Lee, Moo Hyung; Kang, Moon Sung, E-mail: mskang@ssu.ac.kr [Department of Chemical Engineering, Soongsil University, Seoul 156-743 (Korea, Republic of)

    2015-02-09

    Quasi-unipolar non-volatile organic transistor memory (NOTM) can combine the best characteristics of conventional unipolar and ambipolar NOTMs and, as a result, exhibit improved device performance. Unipolar NOTMs typically exhibit a large signal ratio between the programmed and erased current signals but also require a large voltage to program and erase the memory cells. Meanwhile, an ambipolar NOTM can be programmed and erased at lower voltages, but the resulting signal ratio is small. By embedding a discontinuous n-type fullerene layer within a p-type pentacene film, quasi-unipolar NOTMs are fabricated, of which the signal storage utilizes both electrons and holes while the electrical signal relies on only hole conduction. These devices exhibit superior memory performance relative to both pristine unipolar pentacene devices and ambipolar fullerene/pentacene bilayer devices. The quasi-unipolar NOTM exhibited a larger signal ratio between the programmed and erased states while also reducing the voltage required to program and erase a memory cell. This simple approach should be readily applicable for various combinations of advanced organic semiconductors that have been recently developed and thereby should make a significant impact on organic memory research.

  6. Graphene-ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations

    Science.gov (United States)

    Kim, Woo Young; Kim, Hyeon-Don; Kim, Teun-Teun; Park, Hyun-Sung; Lee, Kanghee; Choi, Hyun Joo; Lee, Seung Hoon; Son, Jaehyeon; Park, Namkyoo; Min, Bumki

    2016-01-01

    Memory metamaterials are artificial media that sustain transformed electromagnetic properties without persistent external stimuli. Previous memory metamaterials were realized with phase-change materials, such as vanadium dioxide or chalcogenide glasses, which exhibit memory behaviour with respect to electrically/optically induced thermal stimuli. However, they require a thermally isolated environment for longer retention or strong optical pump for phase-change. Here we demonstrate electrically programmable nonvolatile memory metadevices realised by the hybridization of graphene, a ferroelectric and meta-atoms/meta-molecules, and extend the concept further to establish reconfigurable logic-gate metadevices. For a memory metadevice having a single electrical input, amplitude, phase and even the polarization multi-states were clearly distinguishable with a retention time of over 10 years at room temperature. Furthermore, logic-gate functionalities were demonstrated with reconfigurable logic-gate metadevices having two electrical inputs, with each connected to separate ferroelectric layers that act as the multi-level controller for the doping level of the sandwiched graphene layer.

  7. Effects of thickness and geometric variations in the oxide gate stack on the nonvolatile memory behaviors of charge-trap memory thin-film transistors

    Science.gov (United States)

    Bak, Jun Yong; Kim, So-Jung; Byun, Chun-Won; Pi, Jae-Eun; Ryu, Min-Ki; Hwang, Chi Sun; Yoon, Sung-Min

    2015-09-01

    Device designs of charge-trap oxide memory thin-film transistors (CTM-TFTs) were investigated to enhance their nonvolatile memory performances. The first strategy was to optimize the film thicknesses of the tunneling and charge-trap (CT) layers in order to meet requirements of both higher operation speed and longer retention time. While the program speed and memory window were improved for the device with a thinner tunneling layer, a long retention time was obtained only for the device with a tunneling layer thicker than 5 nm. The carrier concentration and charge-trap densities were optimized in the 30-nm-thick CT layer. It was observed that 10-nm-thick tunneling, 30-nm-thick CT, and 50-nm-thick blocking layers were the best configuration for our proposed CTM-TFTs, where a memory on/off margin higher than 107 was obtained, and a memory margin of 6.6 × 103 was retained even after the lapse of 105 s. The second strategy was to examine the effects of the geometrical relations between the CT and active layers for the applications of memory elements embedded in circuitries. The CTM-TFTs fabricated without an overlap between the CT layer and the drain electrode showed an enhanced program speed by the reduced parasitic capacitance. The drain-bias disturbance for the memory off-state was effectively suppressed even when a higher read-out drain voltage was applied. Appropriate device design parameters, such as the film thicknesses of each component layer and the geometrical relations between them, can improve the memory performances and expand the application fields of the proposed CTM-TFTs.

  8. Origami-based tunable truss structures for non-volatile mechanical memory operation.

    Science.gov (United States)

    Yasuda, Hiromi; Tachi, Tomohiro; Lee, Mia; Yang, Jinkyu

    2017-10-17

    Origami has recently received significant interest from the scientific community as a method for designing building blocks to construct metamaterials. However, the primary focus has been placed on their kinematic applications by leveraging the compactness and auxeticity of planar origami platforms. Here, we present volumetric origami cells-specifically triangulated cylindrical origami (TCO)-with tunable stability and stiffness, and demonstrate their feasibility as non-volatile mechanical memory storage devices. We show that a pair of TCO cells can develop a double-well potential to store bit information. What makes this origami-based approach more appealing is the realization of two-bit mechanical memory, in which two pairs of TCO cells are interconnected and one pair acts as a control for the other pair. By assembling TCO-based truss structures, we experimentally verify the tunable nature of the TCO units and demonstrate the operation of purely mechanical one- and two-bit memory storage prototypes.Origami is a popular method to design building blocks for mechanical metamaterials. Here, the authors assemble a volumetric origami-based structure, predict its axial and rotational movements during folding, and demonstrate the operation of mechanical one- and two-bit memory storage.

  9. Dependence of the organic nonvolatile memory performance on the location of ultra-thin Ag film

    International Nuclear Information System (INIS)

    Jiao Bo; Wu Zhaoxin; He Qiang; Mao Guilin; Hou Xun; Tian Yuan

    2010-01-01

    We demonstrated organic nonvolatile memory devices based on 4,4',4''-tris[N-(3-methylphenyl)-N-phenylamino] triphenylamine (m-MTDATA) inserted by an ultra-thin Ag film. The memory devices with different locations of ultra-thin Ag film in m-MTDATA were investigated, and it was found that the location of the Ag film could affect the performance of the organic memory, such as ON/OFF ratio, retention time and cycling endurance. When the Ag film was located at the ITO/m-MTDATA interface, the largest ON/OFF ratio (about 10 5 ) could be achieved, but the cycling endurance was poor. When the Ag film was located in the middle region of the m-MTDATA layer, the ON/OFF ratios came down by about 10 3 , but better performance of cycling endurance was exhibited. When the Ag film was located close to the Al electrode, the ON/OFF ratios and the retention time of this device decreased sharply and the bistable phenomenon almost disappeared. Our works show a simple approach to improve the performance of organic memory by adjusting the location of the metal film.

  10. Resistance Switching Characteristics in ZnO-Based Nonvolatile Memory Devices

    Directory of Open Access Journals (Sweden)

    Fu-Chien Chiu

    2013-01-01

    Full Text Available Bipolar resistance switching characteristics are demonstrated in Pt/ZnO/Pt nonvolatile memory devices. A negative differential resistance or snapback characteristic can be observed when the memory device switches from a high resistance state to a low resistance state due to the formation of filamentary conducting path. The dependence of pulse width and temperature on set/reset voltages was examined in this work. The exponentially decreasing trend of set/reset voltage with increasing pulse width is observed except when pulse width is larger than 1 s. Hence, to switch the ZnO memory devices, a minimum set/reset voltage is required. The set voltage decreases linearly with the temperature whereas the reset voltage is nearly temperature-independent. In addition, the ac cycling endurance can be over 106 switching cycles, whereas, the dependence of HRS/LRS resistance distribution indicates that a significant memory window closure may take place after about 102  dc switching cycles.

  11. Investigation of High-k Dielectrics and Metal Gate Electrodes for Non-volatile Memory Applications

    Science.gov (United States)

    Jayanti, Srikant

    Due to the increasing demand of non-volatile flash memories in the portable electronics, the device structures need to be scaled down drastically. However, the scalability of traditional floating gate structures beyond 20 nm NAND flash technology node is uncertain. In this regard, the use of metal gates and high-k dielectrics as the gate and interpoly dielectrics respectively, seem to be promising substitutes in order to continue the flash scaling beyond 20nm. Furthermore, research of novel memory structures to overcome the scaling challenges need to be explored. Through this work, the use of high-k dielectrics as IPDs in a memory structure has been studied. For this purpose, IPD process optimization and barrier engineering were explored to determine and improve the memory performance. Specifically, the concept of high-k / low-k barrier engineering was studied in corroboration with simulations. In addition, a novel memory structure comprising a continuous metal floating gate was investigated in combination with high-k blocking oxides. Integration of thin metal FGs and high-k dielectrics into a dual floating gate memory structure to result in both volatile and non-volatile modes of operation has been demonstrated, for plausible application in future unified memory architectures. The electrical characterization was performed on simple MIS/MIM and memory capacitors, fabricated through CMOS compatible processes. Various analytical characterization techniques were done to gain more insight into the material behavior of the layers in the device structure. In the first part of this study, interfacial engineering was investigated by exploring La2O3 as SiO2 scavenging layer. Through the silicate formation, the consumption of low-k SiO2 was controlled and resulted in a significant improvement in dielectric leakage. The performance improvement was also gauged through memory capacitors. In the second part of the study, a novel memory structure consisting of continuous metal FG

  12. Nonvolatile Memories Using Quantum Dot (QD) Floating Gates Assembled on II-VI Tunnel Insulators

    Science.gov (United States)

    Suarez, E.; Gogna, M.; Al-Amoody, F.; Karmakar, S.; Ayers, J.; Heller, E.; Jain, F.

    2010-07-01

    This paper presents preliminary data on quantum dot gate nonvolatile memories using nearly lattice-matched ZnS/Zn0.95Mg0.05S/ZnS tunnel insulators. The GeO x -cladded Ge and SiO x -cladded Si quantum dots (QDs) are self-assembled site-specifically on the II-VI insulator grown epitaxially over the Si channel (formed between the source and drain region). The pseudomorphic II-VI stack serves both as a tunnel insulator and a high- κ dielectric. The effect of Mg incorporation in ZnMgS is also investigated. For the control gate insulator, we have used Si3N4 and SiO2 layers grown by plasma- enhanced chemical vapor deposition.

  13. Nonvolatile organic write-once-read-many-times memory devices based on hexadecafluoro-copper-phthalocyanine

    Science.gov (United States)

    Wang, Lidan; Su, Zisheng; Wang, Cheng

    2012-05-01

    Nonvolatile organic write-once-read-many-times memory device was demonstrated based on hexadecafluoro-copper-phthalocyanine (F16CuPc) single layer sandwiched between indium tin oxide (ITO) anode and Al cathode. The as fabricated device remains in ON state and it can be tuned to OFF state by applying a reverse bias. The ON/OFF current ratio of the device can reach up to 2.3 × 103. Simultaneously, the device shows long-term storage stability and long retention time in air. The ON/OFF transition is attributed to the formation and destruction of the interfacial dipole layer in the ITO/F16CuPc interface, and such a mechanism is different from previously reported ones.

  14. The floating-gate non-volatile semiconductor memory--from invention to the digital age.

    Science.gov (United States)

    Sze, S M

    2012-10-01

    In the past 45 years (from 1967 to 2012), the non-volatile semiconductor memory (NVSM) has emerged from a floating-gate concept to the prime technology driver of the largest industry in the world-the electronics industry. In this paper, we briefly review the historical development of NVSM and project its future trends to the year 2020. In addition, we consider NVSM's wide-range of applications from the digital cellular phone to tablet computer to digital television. As the device dimension is scaled down to the deca-nanometer regime, we expect that many innovations will be made to meet the scaling challenges, and NVSM-inspired technology will continue to enrich and improve our lives for decades to come.

  15. Poly (vinylidene fluoride-trifluoroethylene/barium titanate nanocomposite for ferroelectric nonvolatile memory devices

    Directory of Open Access Journals (Sweden)

    Uvais Valiyaneerilakkal

    2013-04-01

    Full Text Available The effect of barium titanate (BaTiO3 nanoparticles (particle size <100nm on the ferroelectric properties of poly (vinylidenefluoride-trifluoroethylene P(VDF-TrFE copolymer has been studied. Different concentrations of nanoparticles were added to P(VDF-TrFE using probe sonication, and uniform thin films were made. Polarisation - Electric field (P-E hysteresis analysis shows an increase in remnant polarization (Pr and decrease in coercive voltage (Vc. Piezo-response force microscopy analysis shows the switching capability of the polymer composite. The topography and surface roughness was studied using atomic force microscopy. It has been observed that this nanocomposite can be used for the fabrication of non-volatile ferroelectric memory devices.

  16. A radiation-tolerant, low-power non-volatile memory based on silicon nanocrystal quantum dots

    OpenAIRE

    Bell, L. D.; Boer, E.; Ostraat, M.; Brongersma, M. L.; Flagan, R. C.; Atwater, H. A.; De Blauwe, J.; Green, M. L.

    2001-01-01

    Nanocrystal nonvolatile floating-gate memories are a good candidate for space applications - initial results suggest they are fast, more reliable and consume less power than conventional floating gate memories. In the nanocrystal based NVM device, charge is not stored on a continuous polysilicon layer (so-called floating gate), but instead on a layer of discrete nanocrystals. Charge injection and storage in dense arrays of silicon nanocrystals in SiO_2 is a critical aspect of the performance ...

  17. A Compute Capable SSD Architecture for Next-Generation Non-volatile Memories

    Energy Technology Data Exchange (ETDEWEB)

    De, Arup [Univ. of California, San Diego, CA (United States)

    2014-01-01

    Existing storage technologies (e.g., disks and ash) are failing to cope with the processor and main memory speed and are limiting the overall perfor- mance of many large scale I/O or data-intensive applications. Emerging fast byte-addressable non-volatile memory (NVM) technologies, such as phase-change memory (PCM), spin-transfer torque memory (STTM) and memristor are very promising and are approaching DRAM-like performance with lower power con- sumption and higher density as process technology scales. These new memories are narrowing down the performance gap between the storage and the main mem- ory and are putting forward challenging problems on existing SSD architecture, I/O interface (e.g, SATA, PCIe) and software. This dissertation addresses those challenges and presents a novel SSD architecture called XSSD. XSSD o oads com- putation in storage to exploit fast NVMs and reduce the redundant data tra c across the I/O bus. XSSD o ers a exible RPC-based programming framework that developers can use for application development on SSD without dealing with the complication of the underlying architecture and communication management. We have built a prototype of XSSD on the BEE3 FPGA prototyping system. We implement various data-intensive applications and achieve speedup and energy ef- ciency of 1.5-8.9 and 1.7-10.27 respectively. This dissertation also compares XSSD with previous work on intelligent storage and intelligent memory. The existing ecosystem and these new enabling technologies make this system more viable than earlier ones.

  18. Anomalous Threshold Voltage Variability of Nitride Based Charge Storage Nonvolatile Memory Devices

    Directory of Open Access Journals (Sweden)

    Meng Chuan Lee

    2013-01-01

    Full Text Available Conventional technology scaling is implemented to meet the insatiable demand of high memory density and low cost per bit of charge storage nonvolatile memory (NVM devices. In this study, effect of technology scaling to anomalous threshold voltage ( variability is investigated thoroughly on postcycled and baked nitride based charge storage NVM devices. After long annealing bake of high temperature, cell’s variability of each subsequent bake increases within stable distribution and found exacerbate by technology scaling. Apparent activation energy of this anomalous variability was derived through Arrhenius plots. Apparent activation energy (Eaa of this anomalous variability is 0.67 eV at sub-40 nm devices which is a reduction of approximately 2 times from 110 nm devices. Technology scaling clearly aggravates this anomalous variability, and this poses reliability challenges to applications that demand strict control, for example, reference cells that govern fundamental program, erase, and verify operations of NVM devices. Based on critical evidence, this anomalous variability is attributed to lateral displacement of trapped charges in nitride storage layer. Reliability implications of this study are elucidated. Moreover, potential mitigation methods are proposed to complement technology scaling to prolong the front-runner role of nitride based charge storage NVM in semiconductor flash memory market.

  19. Development of novel nonvolatile memory devices using the colossal magnetoresistive oxide praseodymium-calcium-manganese trioxide

    Science.gov (United States)

    Papagianni, Christina

    Pr0.7Ca0.3MnO3 (PCMO) manganese oxide belongs in the family of materials known as transition metal oxides. These compounds have received increased attention due to their perplexing properties such as Colossal Magnetoresistance effect, Charge-Ordered phase, existence of phase-separated states etc. In addition, it was recently discovered that short electrical pulses in amplitude and duration are sufficient to induce reversible and non-volatile resistance changes in manganese perovskite oxide thin films at room temperature, known as the EPIR effect. The existence of the EPIR effect in PCMO thin films at room temperature opens a viable way for the realization of fast, high-density, low power non-volatile memory devices in the near future. The purpose of this study is to investigate, optimize and understand the properties of Pr0.7Ca0.3MnO 3 (PCMO) thin film devices and to identify how these properties affect the EPIR effect. PCMO thin films were deposited on various substrates, such as metals, and conducting and insulating oxides, by pulsed laser and radio frequency sputtering methods. Our objective was to understand and compare the induced resistive states. We attempted to identify the induced resistance changes by considering two resistive models to be equivalent to our devices. Impedance spectroscopy was also utilized in a wide temperature range that was extended down to 70K. Fitted results of the temperature dependence of the resistance states were also included in this study. In the same temperature range, we probed the resistance changes in PCMO thin films and we examined whether the phase transitions affect the EPIR effect. In addition, we included a comparison of devices with electrodes consisting of different size and different materials. We demonstrated a direct relation between the EPIR effect and the phase diagram of bulk PCMO samples. A model that could account for the observed EPIR effect is presented.

  20. An Investigation of Quantum Dot Super Lattice Use in Nonvolatile Memory and Transistors

    Science.gov (United States)

    Mirdha, P.; Parthasarathy, B.; Kondo, J.; Chan, P.-Y.; Heller, E.; Jain, F. C.

    2018-02-01

    Site-specific self-assembled colloidal quantum dots (QDs) will deposit in two layers only on p-type substrate to form a QD superlattice (QDSL). The QDSL structure has been integrated into the floating gate of a nonvolatile memory component and has demonstrated promising results in multi-bit storage, ease of fabrication, and memory retention. Additionally, multi-valued logic devices and circuits have been created by using QDSL structures which demonstrated ternary and quaternary logic. With increasing use of site-specific self-assembled QDSLs, fundamental understanding of silicon and germanium QDSL charge storage capability, self-assembly on specific surfaces, uniform distribution, and mini-band formation has to be understood for successful implementation in devices. In this work, we investigate the differences in electron charge storage by building metal-oxide semiconductor (MOS) capacitors and using capacitance and voltage measurements to quantify the storage capabilities. The self-assembly process and distribution density of the QDSL is done by obtaining atomic force microscopy (AFM) results on line samples. Additionally, we present a summary of the theoretical density of states in each of the QDSLs.

  1. Low temperature synthesis and electrical characterization of germanium doped Ti-based nanocrystals for nonvolatile memory

    International Nuclear Information System (INIS)

    Feng, Li-Wei; Chang, Chun-Yen; Chang, Ting-Chang; Tu, Chun-Hao; Wang, Pai-Syuan; Lin, Chao-Cheng; Chen, Min-Chen; Huang, Hui-Chun; Gan, Der-Shin; Ho, New-Jin; Chen, Shih-Ching; Chen, Shih-Cheng

    2011-01-01

    Chemical and electrical characteristics of Ti-based nanocrystals containing germanium, fabricated by annealing the co-sputtered thin film with titanium silicide and germanium targets, were demonstrated for low temperature applications of nonvolatile memory. Formation and composition characteristics of nanocrystals (NCs) at various annealing temperatures were examined by transmission electron microscopy and X-ray photon-emission spectroscopy, respectively. It was observed that the addition of germanium (Ge) significantly reduces the proposed thermal budget necessary for Ti-based NC formation due to the rise of morphological instability and agglomeration properties during annealing. NC structures formed after annealing at 500 °C, and separated well at 600 °C annealing. However, it was also observed that significant thermal desorption of Ge atoms occurs at 600 °C due to the sublimation of formatted GeO phase and results in a serious decrease of memory window. Therefore, an approach to effectively restrain Ge thermal desorption is proposed by encapsulating the Ti-based trapping layer with a thick silicon oxide layer before 600 °C annealing. The electrical characteristics of data retention in the sample with the 600 °C annealing exhibited better performance than the 500 °C-annealed sample, a result associated with the better separation and better crystallization of the NC structures.

  2. Subthreshold-swing-adjustable tunneling-field-effect-transistor-based random-access memory for nonvolatile operation

    Science.gov (United States)

    Huh, In; Cheon, Woo Young; Choi, Woo Young

    2016-04-01

    A subthreshold-swing-adjustable tunneling-field-effect-transistor-based random-access memory (SAT RAM) has been proposed and fabricated for low-power nonvolatile memory applications. The proposed SAT RAM cell demonstrates adjustable subthreshold swing (SS) depending on stored information: small SS in the erase state ("1" state) and large SS in the program state ("0" state). Thus, SAT RAM cells can achieve low read voltage (Vread) with a large memory window in addition to the effective suppression of ambipolar behavior. These unique features of the SAT RAM are originated from the locally stored charge, which modulates the tunneling barrier width (Wtun) of the source-to-channel tunneling junction.

  3. Atomically Smooth Epitaxial Ferroelectric Thin Films for the Development of a Nonvolatile, Ultrahigh Density, Fast, Low Voltage, Radiation-Hard Memory

    National Research Council Canada - National Science Library

    Ahn, Charles H

    2006-01-01

    The goal of this research is to fabricate atomically smooth, single crystalline, complex oxide thin film nanostructures for use in a nonvolatile, ultrahigh density, fast, low voltage, radiation-hard memory...

  4. Unipolar resistive switching in metal oxide/organic semiconductor non-volatile memories as a critical phenomenon

    International Nuclear Information System (INIS)

    Bory, Benjamin F.; Meskers, Stefan C. J.; Rocha, Paulo R. F.; Gomes, Henrique L.; Leeuw, Dago M. de

    2015-01-01

    Diodes incorporating a bilayer of an organic semiconductor and a wide bandgap metal oxide can show unipolar, non-volatile memory behavior after electroforming. The prolonged bias voltage stress induces defects in the metal oxide with an areal density exceeding 10 17  m −2 . We explain the electrical bistability by the coexistence of two thermodynamically stable phases at the interface between an organic semiconductor and metal oxide. One phase contains mainly ionized defects and has a low work function, while the other phase has mainly neutral defects and a high work function. In the diodes, domains of the phase with a low work function constitute current filaments. The phase composition and critical temperature are derived from a 2D Ising model as a function of chemical potential. The model predicts filamentary conduction exhibiting a negative differential resistance and nonvolatile memory behavior. The model is expected to be generally applicable to any bilayer system that shows unipolar resistive switching

  5. Electric field mediated non-volatile tuning magnetism in CoPt/PMN-PT heterostructure for magnetoelectric memory devices

    Science.gov (United States)

    Yang, Y. T.; Li, J.; Peng, X. L.; Wang, X. Q.; Wang, D. H.; Cao, Q. Q.; Du, Y. W.

    2016-02-01

    We report a power efficient non-volatile magnetoelectric memory in the CoPt/(011)PMN-PT heterostructure. Two reversible and stable electric field induced coercivity states (i.e., high-HC or low-HC) are obtained due to the strain mediated converse magnetoelectric effect. The reading process of the different coercive field information written by electric fields is demonstrated by using a magnetoresistance read head. This result shows good prospects in the application of novel multiferroic devices.

  6. Large scale integration of flexible non-volatile, re-addressable memories using P(VDF-TrFE) and amorphous oxide transistors

    International Nuclear Information System (INIS)

    Gelinck, Gerwin H; Cobb, Brian; Van Breemen, Albert J J M; Myny, Kris

    2015-01-01

    Ferroelectric polymers and amorphous metal oxide semiconductors have emerged as important materials for re-programmable non-volatile memories and high-performance, flexible thin-film transistors, respectively. However, realizing sophisticated transistor memory arrays has proven to be a challenge, and demonstrating reliable writing to and reading from such a large scale memory has thus far not been demonstrated. Here, we report an integration of ferroelectric, P(VDF-TrFE), transistor memory arrays with thin-film circuitry that can address each individual memory element in that array. n-type indium gallium zinc oxide is used as the active channel material in both the memory and logic thin-film transistors. The maximum process temperature is 200 °C, allowing plastic films to be used as substrate material. The technology was scaled up to 150 mm wafer size, and offers good reproducibility, high device yield and low device variation. This forms the basis for successful demonstration of memory arrays, read and write circuitry, and the integration of these. (paper)

  7. Four-state non-volatile memory in a multiferroic spin filter tunnel junction

    Science.gov (United States)

    Ruan, Jieji; Li, Chen; Yuan, Zhoushen; Wang, Peng; Li, Aidong; Wu, Di

    2016-12-01

    We report a spin filter type multiferroic tunnel junction with a ferromagnetic/ferroelectric bilayer barrier. Memory functions of a spin filter magnetic tunnel junction and a ferroelectric tunnel junction are combined in this single device, producing four non-volatile resistive states that can be read out in a non-destructive manner. This concept is demonstrated in a LaNiO3/Pr0.8Ca0.2MnO3/BaTiO3/La0.7Sr0.3MnO3 all-oxide tunnel junction. The ferromagnetic insulator Pr0.8Ca0.2MnO3 serves as the spin filter and the ferromagnetic metal La0.7Sr0.3MnO3 is the spin analyzer. The ferroelectric polarization reversal in the BaTiO3 barrier switches the tunneling barrier height to produce a tunneling electroresistance. The ferroelectric switching also modulates the spin polarization and the spin filtering efficiency in Pr0.8Ca0.2MnO3.

  8. Phase-change materials for non-volatile memory devices: from technological challenges to materials science issues

    Science.gov (United States)

    Noé, Pierre; Vallée, Christophe; Hippert, Françoise; Fillot, Frédéric; Raty, Jean-Yves

    2018-01-01

    Chalcogenide phase-change materials (PCMs), such as Ge-Sb-Te alloys, have shown outstanding properties, which has led to their successful use for a long time in optical memories (DVDs) and, recently, in non-volatile resistive memories. The latter, known as PCM memories or phase-change random access memories (PCRAMs), are the most promising candidates among emerging non-volatile memory (NVM) technologies to replace the current FLASH memories at CMOS technology nodes under 28 nm. Chalcogenide PCMs exhibit fast and reversible phase transformations between crystalline and amorphous states with very different transport and optical properties leading to a unique set of features for PCRAMs, such as fast programming, good cyclability, high scalability, multi-level storage capability, and good data retention. Nevertheless, PCM memory technology has to overcome several challenges to definitively invade the NVM market. In this review paper, we examine the main technological challenges that PCM memory technology must face and we illustrate how new memory architecture, innovative deposition methods, and PCM composition optimization can contribute to further improvements of this technology. In particular, we examine how to lower the programming currents and increase data retention. Scaling down PCM memories for large-scale integration means the incorporation of the PCM into more and more confined structures and raises materials science issues in order to understand interface and size effects on crystallization. Other materials science issues are related to the stability and ageing of the amorphous state of PCMs. The stability of the amorphous phase, which determines data retention in memory devices, can be increased by doping the PCM. Ageing of the amorphous phase leads to a large increase of the resistivity with time (resistance drift), which has up to now hindered the development of ultra-high multi-level storage devices. A review of the current understanding of all these

  9. Density-controllable nonvolatile memory devices having metal nanocrystals through chemical synthesis and assembled by spin-coating technique

    International Nuclear Information System (INIS)

    Wang Guangli; Chen Yubin; Shi Yi; Pu Lin; Pan Lijia; Zhang Rong; Zheng Youdou

    2010-01-01

    A novel two-step method is employed, for the first time, to fabricate nonvolatile memory devices that have metal nanocrystals. First, size-averaged Au nanocrystals are synthesized chemically; second, they are assembled into memory devices by a spin-coating technique at room temperature. This attractive approach makes it possible to tailor the diameter and control the density of nanocrystals individually. In addition, processes at room temperature prevent Au diffusion, which is a main concern for the application of metal nanocrystal-based memory. The experimental results, both the morphology characterization and the electrical measurements, reveal that there is an optimum density of nanocrystal monolayer to balance between long data retention and a large hysteresis memory window. At the same time, density-controllable devices could also feed the preferential emphasis on either memory window or retention time. All these facts confirm the advantages and novelty of our two-step method. (semiconductor devices)

  10. Resistive switching characteristics of polymer non-volatile memory devices in a scalable via-hole structure

    International Nuclear Information System (INIS)

    Kim, Tae-Wook; Choi, Hyejung; Oh, Seung-Hwan; Jo, Minseok; Wang, Gunuk; Cho, Byungjin; Kim, Dong-Yu; Hwang, Hyunsang; Lee, Takhee

    2009-01-01

    The resistive switching characteristics of polyfluorene-derivative polymer material in a sub-micron scale via-hole device structure were investigated. The scalable via-hole sub-microstructure was fabricated using an e-beam lithographic technique. The polymer non-volatile memory devices varied in size from 40 x 40 μm 2 to 200 x 200 nm 2 . From the scaling of junction size, the memory mechanism can be attributed to the space-charge-limited current with filamentary conduction. Sub-micron scale polymer memory devices showed excellent resistive switching behaviours such as a large ON/OFF ratio (I ON /I OFF ∼10 4 ), excellent device-to-device switching uniformity, good sweep endurance, and good retention times (more than 10 000 s). The successful operation of sub-micron scale memory devices of our polyfluorene-derivative polymer shows promise to fabricate high-density polymer memory devices.

  11. Nonvolatile “AND,” “OR,” and “NOT” Boolean logic gates based on phase-change memory

    Energy Technology Data Exchange (ETDEWEB)

    Li, Y.; Zhong, Y. P.; Deng, Y. F.; Zhou, Y. X.; Xu, L.; Miao, X. S., E-mail: miaoxs@mail.hust.edu.cn [Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074 (China); School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2013-12-21

    Electronic devices or circuits that can implement both logic and memory functions are regarded as the building blocks for future massive parallel computing beyond von Neumann architecture. Here we proposed phase-change memory (PCM)-based nonvolatile logic gates capable of AND, OR, and NOT Boolean logic operations verified in SPICE simulations and circuit experiments. The logic operations are parallel computing and results can be stored directly in the states of the logic gates, facilitating the combination of computing and memory in the same circuit. These results are encouraging for ultralow-power and high-speed nonvolatile logic circuit design based on novel memory devices.

  12. Nonvolatile “AND,” “OR,” and “NOT” Boolean logic gates based on phase-change memory

    International Nuclear Information System (INIS)

    Li, Y.; Zhong, Y. P.; Deng, Y. F.; Zhou, Y. X.; Xu, L.; Miao, X. S.

    2013-01-01

    Electronic devices or circuits that can implement both logic and memory functions are regarded as the building blocks for future massive parallel computing beyond von Neumann architecture. Here we proposed phase-change memory (PCM)-based nonvolatile logic gates capable of AND, OR, and NOT Boolean logic operations verified in SPICE simulations and circuit experiments. The logic operations are parallel computing and results can be stored directly in the states of the logic gates, facilitating the combination of computing and memory in the same circuit. These results are encouraging for ultralow-power and high-speed nonvolatile logic circuit design based on novel memory devices

  13. Semiconductor-Free Nonvolatile Resistive Switching Memory Devices Based on Metal Nanogaps Fabricated on Flexible Substrates via Adhesion Lithography

    KAUST Repository

    Semple, James

    2017-01-02

    Electronic memory cells are of critical importance in modern-day computing devices, including emerging technology sectors such as large-area printed electronics. One technology that has being receiving significant interest in recent years is resistive switching primarily due to its low dimensionality and nonvolatility. Here, we describe the development of resistive switching memory device arrays based on empty aluminum nanogap electrodes. By employing adhesion lithography, a low-temperature and large-area compatible nanogap fabrication technique, dense arrays of memory devices are demonstrated on both rigid and flexible plastic substrates. As-prepared devices exhibit nonvolatile memory operation with stable endurance, resistance ratios >10⁴ and retention times of several months. An intermittent analysis of the electrode microstructure reveals that controlled resistive switching is due to migration of metal from the electrodes into the nanogap under the application of an external electric field. This alternative form of resistive random access memory is promising for use in emerging sectors such as large-area electronics as well as in electronics for harsh environments, e.g., space, high/low temperature, magnetic influences, radiation, vibration, and pressure.

  14. Semiconductor-Free Nonvolatile Resistive Switching Memory Devices Based on Metal Nanogaps Fabricated on Flexible Substrates via Adhesion Lithography

    KAUST Repository

    Semple, James; Wyatt-Moon, Gwenhivir; Georgiadou, Dimitra G.; McLachlan, Martyn A.; Anthopoulos, Thomas D.

    2017-01-01

    Electronic memory cells are of critical importance in modern-day computing devices, including emerging technology sectors such as large-area printed electronics. One technology that has being receiving significant interest in recent years is resistive switching primarily due to its low dimensionality and nonvolatility. Here, we describe the development of resistive switching memory device arrays based on empty aluminum nanogap electrodes. By employing adhesion lithography, a low-temperature and large-area compatible nanogap fabrication technique, dense arrays of memory devices are demonstrated on both rigid and flexible plastic substrates. As-prepared devices exhibit nonvolatile memory operation with stable endurance, resistance ratios >10⁴ and retention times of several months. An intermittent analysis of the electrode microstructure reveals that controlled resistive switching is due to migration of metal from the electrodes into the nanogap under the application of an external electric field. This alternative form of resistive random access memory is promising for use in emerging sectors such as large-area electronics as well as in electronics for harsh environments, e.g., space, high/low temperature, magnetic influences, radiation, vibration, and pressure.

  15. A Novel Non-Destructive Silicon-on-Insulator Nonvolatile Memory - LDRD 99-0750 Final Report

    Energy Technology Data Exchange (ETDEWEB)

    DRAPER,BRUCE L.; FLEETWOOD,D. M.; MEISENHEIMER,TIMOTHY L.; MURRAY,JAMES R.; SCHWANK,JAMES R.; SHANEYFELT,MARTY R.; SMITH,PAUL M.; VANHEUSDEN,KAREL J.; WARREN,WILLIAM L.

    1999-11-01

    Defects in silicon-on-insulator (SOI) buried oxides are normally considered deleterious to device operation. Similarly, exposing devices to hydrogen at elevated temperatures often can lead to radiation-induced charge buildup. However, in this work, we take advantage of as-processed defects in SOI buried oxides and moderate temperature hydrogen anneals to generate mobile protons in the buried oxide to form the basis of a ''protonic'' nonvolatile memory. Capacitors and fully-processed transistors were fabricated. SOI buried oxides are exposed to hydrogen at moderate temperatures using a variety of anneal conditions to optimize the density of mobile protons. A fast ramp cool down anneal was found to yield the maximum number of mobile protons. Unfortunately, we were unable to obtain uniform mobile proton concentrations across a wafer. Capacitors were irradiated to investigate the potential use of protonic memories for space and weapon applications. Irradiating under a negative top-gate bias or with no applied bias was observed to cause little degradation in the number of mobile protons. However, irradiating to a total dose of 100 krad(SiO{sub 2}) under a positive top-gate bias caused approximately a 100% reduction in the number of mobile protons. Cycling capacitors up to 10{sup 4} cycles had little effect on the switching characteristics. No change in the retention characteristics were observed for times up to 3 x 10{sup 4} s for capacitors stored unbiased at 200 C. These results show the proof-of-concept for a protonic nonvolatile memory. Two memory architectures are proposed for a protonic non-destructive, nonvolatile memory.

  16. High-Performance Nonvolatile Organic Field-Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers.

    Science.gov (United States)

    Li, Wen; Guo, Fengning; Ling, Haifeng; Zhang, Peng; Yi, Mingdong; Wang, Laiyuan; Wu, Dequn; Xie, Linghai; Huang, Wei

    2017-08-01

    Nonvolatile organic field-effect transistor (OFET) memory devices based on pentacene/ N , N '-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13)/pentacene trilayer organic heterostructures have been proposed. The discontinuous n-type P13 embedded in p-type pentacene layers can not only provide electrons in the semiconductor layer that facilitates electron trapping process; it also works as charge trapping sites, which is attributed to the quantum well-like pentacene/P13/pentacene organic heterostructures. The synergistic effects of charge trapping in the discontinuous P13 and the charge-trapping property of the poly(4-vinylphenol) (PVP) layer remarkably improve the memory performance. In addition, the trilayer organic heterostructures have also been successfully applied to multilevel and flexible nonvolatile memory devices. The results provide a novel design strategy to achieve high-performance nonvolatile OFET memory devices and allow potential applications for different combinations of various organic semiconductor materials in OFET memory.

  17. Novel ferroelectric capacitor for non-volatile memory storage and biomedical tactile sensor applications

    International Nuclear Information System (INIS)

    Liu, Shi Yang; Chua, Lynn; Tan, Kian Chuan; Valavan, S.E.

    2010-01-01

    We report on novel ferroelectric thin film compositions for use in non-volatile memory storage and biomedical tactile sensor applications. The lead zirconate titanate (PZT) composition was modified by lanthanum (La 3+ ) (PLZT) and vanadium (V 5+ ) (PZTV, PLZTV) doping. Hybrid films with PZTV and PLZTV as top layers are also made using seed layers of differing compositions using sol-gel and spin coating methods. La 3+ doping decreased the coercive field, polarization and leakage current, while increasing the relative permittivity. V 5+ doping, while having similar effects, results in an enhanced polarization, with comparable dielectric loss characteristics. Complex doping of both La 3+ and V 5+ in PLZTV, while reducing the polarization relative to PZTV, significantly decreases the coercive field. Hybrid films have a greater uniformity of grain formation than non-hybrid films, thus decreasing the coercive field, leakage current and polarization fatigue while increasing the relative permittivity. Analysis using X-ray diffraction (XRD) verified the retention of the PZT perovskite structure in the novel films. PLZT/PZTV has been identified as an optimal ferroelectric film composition due to its desirable ferroelectric, fatigue and dielectric properties, including the highest observed remnant polarization (P r ) of ∼ 25 μC/cm 2 , saturation polarization (P sat ) of ∼ 58 μC/cm 2 and low coercive field (E c ) of ∼ 60 kV/cm at an applied field of ∼ 1000 kV/cm, as well as a low leakage current density of ∼ 10 -5 A/cm 2 at 500 kV/cm and fatigue resistance of up to ∼ 10 10 switching cycles.

  18. Multi-floor cascading ferroelectric nanostructures: multiple data writing-based multi-level non-volatile memory devices

    Science.gov (United States)

    Hyun, Seung; Kwon, Owoong; Lee, Bom-Yi; Seol, Daehee; Park, Beomjin; Lee, Jae Yong; Lee, Ju Hyun; Kim, Yunseok; Kim, Jin Kon

    2016-01-01

    Multiple data writing-based multi-level non-volatile memory has gained strong attention for next-generation memory devices to quickly accommodate an extremely large number of data bits because it is capable of storing multiple data bits in a single memory cell at once. However, all previously reported devices have failed to store a large number of data bits due to the macroscale cell size and have not allowed fast access to the stored data due to slow single data writing. Here, we introduce a novel three-dimensional multi-floor cascading polymeric ferroelectric nanostructure, successfully operating as an individual cell. In one cell, each floor has its own piezoresponse and the piezoresponse of one floor can be modulated by the bias voltage applied to the other floor, which means simultaneously written data bits in both floors can be identified. This could achieve multi-level memory through a multiple data writing process.Multiple data writing-based multi-level non-volatile memory has gained strong attention for next-generation memory devices to quickly accommodate an extremely large number of data bits because it is capable of storing multiple data bits in a single memory cell at once. However, all previously reported devices have failed to store a large number of data bits due to the macroscale cell size and have not allowed fast access to the stored data due to slow single data writing. Here, we introduce a novel three-dimensional multi-floor cascading polymeric ferroelectric nanostructure, successfully operating as an individual cell. In one cell, each floor has its own piezoresponse and the piezoresponse of one floor can be modulated by the bias voltage applied to the other floor, which means simultaneously written data bits in both floors can be identified. This could achieve multi-level memory through a multiple data writing process. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr07377d

  19. Technology breakthroughs in high performance metal-oxide-semiconductor devices for ultra-high density, low power non-volatile memory applications

    Science.gov (United States)

    Hong, Augustin Jinwoo

    Non-volatile memory devices have attracted much attention because data can be retained without power consumption more than a decade. Therefore, non-volatile memory devices are essential to mobile electronic applications. Among state of the art non-volatile memory devices, NAND flash memory has earned the highest attention because of its ultra-high scalability and therefore its ultra-high storage capacity. However, human desire as well as market competition requires not only larger storage capacity but also lower power consumption for longer battery life time. One way to meet this human desire and extend the benefits of NAND flash memory is finding out new materials for storage layer inside the flash memory, which is called floating gate in the state of the art flash memory device. In this dissertation, we study new materials for the floating gate that can lower down the power consumption and increase the storage capacity at the same time. To this end, we employ various materials such as metal nanodot, metal thin film and graphene incorporating complementary-metal-oxide-semiconductor (CMOS) compatible processes. Experimental results show excellent memory effects at relatively low operating voltages. Detailed physics and analysis on experimental results are discussed. These new materials for data storage can be promising candidates for future non-volatile memory application beyond the state of the art flash technologies.

  20. Transport and Fatigue Properties of Ferroelectric Polymer P(VDF-TrFE) For Nonvolatile Memory Applications

    KAUST Repository

    Hanna, Amir

    2012-06-01

    Organic ferroelectrics polymers have recently received much interest for use in nonvolatile memory devices. The ferroelectric copolymer poly(vinylidene fluoride- trifluoroethylene) , P(VDF-TrFE), is a promising candidate due to its relatively high remnant polarization, low coercive field, fast switching times, easy processability, and low Curie transition. However, no detailed study of charge injection and current transport properties in P(VDF-TrFE) have been reported in the literature yet. Charge injection and transport are believed to affect various properties of ferroelectric films such as remnant polarization values and polarization fatigue behavior.. Thus, this thesis aims to study charge injection in P(VDF-TrFE) and its transport properties as a function of electrode material. Injection was studied for Al, Ag, Au and Pt electrodes. Higher work function metals such as Pt have shown less leakage current compared to lower work function metals such as Al for more than an order of magnitude. That implied n-type conduction behavior for P(VDF-TrFE), as well as electrons being the dominant injected carrier type. Charge transport was also studied as a function of temperature, and two major transport regimes were identified: 1) Thermionic emission over a Schottky barrier for low fields (E < 25 MV/m). 2) Space-Charge-Limited regime at higher fields (25 < E <120 MV/m). We have also studied the optical imprint phenomenon, the polarization fatigue resulting from a combination of broad band optical illumination and DC bias near the switching field. A setup was designed for the experiment, and validated by reproducing the reported effect in polycrystalline Pb(Zr,Ti)O3 , PZT, film. On the other hand, P(VDF-TrFE) film showed no polarization fatigue as a result of optical imprint test, which could be attributed to the large band gap of the material, and the low intensity of the UV portion of the arc lamp white light used for the experiment. Results suggest using high work

  1. A hybrid magnetic/complementary metal oxide semiconductor three-context memory bit cell for non-volatile circuit design

    International Nuclear Information System (INIS)

    Jovanović, B.; Brum, R. M.; Torres, L.

    2014-01-01

    After decades of continued scaling to the beat of Moore's law, it now appears that conventional silicon based devices are approaching their physical limits. In today's deep-submicron nodes, a number of short-channel and quantum effects are emerging that affect the manufacturing process, as well as, the functionality of the microelectronic systems-on-chip. Spintronics devices that exploit both the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, are promising solutions to circumvent these scaling threats. Being compatible with the CMOS technology, such devices offer a promising synergy of radiation immunity, infinite endurance, non-volatility, increased density, etc. In this paper, we present a hybrid (magnetic/CMOS) cell that is able to store and process data both electrically and magnetically. The cell is based on perpendicular spin-transfer torque magnetic tunnel junctions (STT-MTJs) and is suitable for use in magnetic random access memories and reprogrammable computing (non-volatile registers, processor cache memories, magnetic field-programmable gate arrays, etc). To demonstrate the potential our hybrid cell, we physically implemented a small hybrid memory block using 45 nm × 45 nm round MTJs for the magnetic part and 28 nm fully depleted silicon on insulator (FD-SOI) technology for the CMOS part. We also report the cells measured performances in terms of area, robustness, read/write speed and energy consumption

  2. A hybrid magnetic/complementary metal oxide semiconductor three-context memory bit cell for non-volatile circuit design

    Energy Technology Data Exchange (ETDEWEB)

    Jovanović, B., E-mail: bojan.jovanovic@lirmm.fr, E-mail: lionel.torres@lirmm.fr; Brum, R. M.; Torres, L. [LIRMM—University of Montpellier 2/UMR CNRS 5506, 161 Rue Ada, 34095 Montpellier (France)

    2014-04-07

    After decades of continued scaling to the beat of Moore's law, it now appears that conventional silicon based devices are approaching their physical limits. In today's deep-submicron nodes, a number of short-channel and quantum effects are emerging that affect the manufacturing process, as well as, the functionality of the microelectronic systems-on-chip. Spintronics devices that exploit both the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, are promising solutions to circumvent these scaling threats. Being compatible with the CMOS technology, such devices offer a promising synergy of radiation immunity, infinite endurance, non-volatility, increased density, etc. In this paper, we present a hybrid (magnetic/CMOS) cell that is able to store and process data both electrically and magnetically. The cell is based on perpendicular spin-transfer torque magnetic tunnel junctions (STT-MTJs) and is suitable for use in magnetic random access memories and reprogrammable computing (non-volatile registers, processor cache memories, magnetic field-programmable gate arrays, etc). To demonstrate the potential our hybrid cell, we physically implemented a small hybrid memory block using 45 nm × 45 nm round MTJs for the magnetic part and 28 nm fully depleted silicon on insulator (FD-SOI) technology for the CMOS part. We also report the cells measured performances in terms of area, robustness, read/write speed and energy consumption.

  3. Electrical and ferroelectric properties of RF sputtered PZT/SBN on silicon for non-volatile memory applications

    Science.gov (United States)

    Singh, Prashant; Jha, Rajesh Kumar; Singh, Rajat Kumar; Singh, B. R.

    2018-02-01

    We report the integration of multilayer ferroelectric film deposited by RF magnetron sputtering and explore the electrical characteristics for its application as the gate of ferroelectric field effect transistor for non-volatile memories. PZT (Pb[Zr0.35Ti0.65]O3) and SBN (SrBi2Nb2O9) ferroelectric materials were selected for the stack fabrication due to their large polarization and fatigue free properties respectively. Electrical characterization has been carried out to obtain memory window, leakage current density, PUND and endurance characteristics. Fabricated multilayer ferroelectric film capacitor structure shows large memory window of 17.73 V and leakage current density of the order 10-6 A cm-2 for the voltage sweep of -30 to +30 V. This multilayer gate stack of PZT/SBN shows promising endurance property with no degradation in the remnant polarization for the read/write iteration cycles upto 108.

  4. GaAs metal-oxide-semiconductor based non-volatile flash memory devices with InAs quantum dots as charge storage nodes

    Energy Technology Data Exchange (ETDEWEB)

    Islam, Sk Masiul, E-mail: masiulelt@gmail.com; Chowdhury, Sisir; Sarkar, Krishnendu; Nagabhushan, B.; Banerji, P. [Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302 (India); Chakraborty, S. [Applied Materials Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Sector-I, Kolkata 700 064 (India); Mukherjee, Rabibrata [Department of Chemical Engineering, Indian Institute of Technology, Kharagpur 721302 (India)

    2015-06-24

    Ultra-thin InP passivated GaAs metal-oxide-semiconductor based non-volatile flash memory devices were fabricated using InAs quantum dots (QDs) as charge storing elements by metal organic chemical vapor deposition technique to study the efficacy of the QDs as charge storage elements. The grown QDs were embedded between two high-k dielectric such as HfO{sub 2} and ZrO{sub 2}, which were used for tunneling and control oxide layers, respectively. The size and density of the QDs were found to be 5 nm and 1.8×10{sup 11} cm{sup −2}, respectively. The device with a structure Metal/ZrO{sub 2}/InAs QDs/HfO{sub 2}/GaAs/Metal shows maximum memory window equivalent to 6.87 V. The device also exhibits low leakage current density of the order of 10{sup −6} A/cm{sup 2} and reasonably good charge retention characteristics. The low value of leakage current in the fabricated memory device is attributed to the Coulomb blockade effect influenced by quantum confinement as well as reduction of interface trap states by ultra-thin InP passivation on GaAs prior to HfO{sub 2} deposition.

  5. Novel Quantum Dot Gate FETs and Nonvolatile Memories Using Lattice-Matched II-VI Gate Insulators

    Science.gov (United States)

    Jain, F. C.; Suarez, E.; Gogna, M.; Alamoody, F.; Butkiewicus, D.; Hohner, R.; Liaskas, T.; Karmakar, S.; Chan, P.-Y.; Miller, B.; Chandy, J.; Heller, E.

    2009-08-01

    This paper presents the successful use of ZnS/ZnMgS and other II-VI layers (lattice-matched or pseudomorphic) as high- k gate dielectrics in the fabrication of quantum dot (QD) gate Si field-effect transistors (FETs) and nonvolatile memory structures. Quantum dot gate FETs and nonvolatile memories have been fabricated in two basic configurations: (1) monodispersed cladded Ge nanocrystals (e.g., GeO x -cladded-Ge quantum dots) site-specifically self-assembled over the lattice-matched ZnMgS gate insulator in the channel region, and (2) ZnTe-ZnMgTe quantum dots formed by self-organization, using metalorganic chemical vapor-phase deposition (MOCVD), on ZnS-ZnMgS gate insulator layers grown epitaxially on Si substrates. Self-assembled GeO x -cladded Ge QD gate FETs, exhibiting three-state behavior, are also described. Preliminary results on InGaAs-on-InP FETs, using ZnMgSeTe/ZnSe gate insulator layers, are presented.

  6. Functionalized Graphitic Carbon Nitride for Metal-free, Flexible and Rewritable Nonvolatile Memory Device via Direct Laser-Writing

    Science.gov (United States)

    Zhao, Fei; Cheng, Huhu; Hu, Yue; Song, Long; Zhang, Zhipan; Jiang, Lan; Qu, Liangti

    2014-01-01

    Graphitic carbon nitride nanosheet (g-C3N4-NS) has layered structure similar with graphene nanosheet and presents unusual physicochemical properties due to the s-triazine fragments. But their electronic and electrochemical applications are limited by the relatively poor conductivity. The current work provides the first example that atomically thick g-C3N4-NSs are the ideal candidate as the active insulator layer with tunable conductivity for achieving the high performance memory devices with electrical bistability. Unlike in conventional memory diodes, the g-C3N4-NSs based devices combined with graphene layer electrodes are flexible, metal-free and low cost. The functionalized g-C3N4-NSs exhibit desirable dispersibility and dielectricity which support the all-solution fabrication and high performance of the memory diodes. Moreover, the flexible memory diodes are conveniently fabricated through the fast laser writing process on graphene oxide/g-C3N4-NSs/graphene oxide thin film. The obtained devices not only have the nonvolatile electrical bistability with great retention and endurance, but also show the rewritable memory effect with a reliable ON/OFF ratio of up to 105, which is the highest among all the metal-free flexible memory diodes reported so far, and even higher than those of metal-containing devices. PMID:25073687

  7. Functionalized Graphitic Carbon Nitride for Metal-free, Flexible and Rewritable Nonvolatile Memory Device via Direct Laser-Writing

    Science.gov (United States)

    Zhao, Fei; Cheng, Huhu; Hu, Yue; Song, Long; Zhang, Zhipan; Jiang, Lan; Qu, Liangti

    2014-07-01

    Graphitic carbon nitride nanosheet (g-C3N4-NS) has layered structure similar with graphene nanosheet and presents unusual physicochemical properties due to the s-triazine fragments. But their electronic and electrochemical applications are limited by the relatively poor conductivity. The current work provides the first example that atomically thick g-C3N4-NSs are the ideal candidate as the active insulator layer with tunable conductivity for achieving the high performance memory devices with electrical bistability. Unlike in conventional memory diodes, the g-C3N4-NSs based devices combined with graphene layer electrodes are flexible, metal-free and low cost. The functionalized g-C3N4-NSs exhibit desirable dispersibility and dielectricity which support the all-solution fabrication and high performance of the memory diodes. Moreover, the flexible memory diodes are conveniently fabricated through the fast laser writing process on graphene oxide/g-C3N4-NSs/graphene oxide thin film. The obtained devices not only have the nonvolatile electrical bistability with great retention and endurance, but also show the rewritable memory effect with a reliable ON/OFF ratio of up to 105, which is the highest among all the metal-free flexible memory diodes reported so far, and even higher than those of metal-containing devices.

  8. Effect of Ag nanoparticles on resistive switching of polyfluorene-based organic non-volatile memory devices

    International Nuclear Information System (INIS)

    Kim, Tae-Wook; Oh, Seung-Hwan; Choi, Hye-Jung; Wang, Gun-Uk; Kim, Dong-Yu; Hwang, Hyun-Sang; Lee, Tak-Hee

    2010-01-01

    The effects of Ag nanoparticles on the switching behavior of polyfluorene-based organic nonvolatile memory devices were investigated. Polyfluorene-derivatives (WPF-oxy-F) with and without Ag nanoparticles were synthesized, and the presence of Ag nanoparticles in Ag-WPF-oxy-F was identified by transmission electron microscopy and X-ray photoelectron spectroscopy analyses. The Ag-nanoparticles did not significantly affect the basic switching performances, such as the current-voltage characteristics, the distribution of on/off resistance, and the retention. The pulse switching time of Ag-WPF-oxy-F was faster than that of WPF-oxy-F. Ag-WPF-oxy-F memory devices showed an area dependence in the high resistance state, implying that formation of a Ag metallic channel for current conduction.

  9. A New Concept for Non-Volatile Memory: The Electric-Pulse Induced Resistive Change Effect in Colossal Magnetoresistive Thin Films

    Science.gov (United States)

    Liu, S. Q.; Wu, N. J.; Ignatiev, A.

    2001-01-01

    A novel electric pulse-induced resistive change (EPIR) effect has been found in thin film colossal magnetoresistive (CMR) materials, and has shown promise for the development of resistive, nonvolatile memory. The EPIR effect is induced by the application of low voltage (resistance of the thin film sample depending on pulse polarity. The sample resistance change has been shown to be over two orders of magnitude, and is nonvolatile after pulsing. The sample resistance can also be changed through multiple levels - as many as 50 have been shown. Such a device can provide a way for the development of a new kind of nonvolatile multiple-valued memory with high density, fast write/read speed, low power-consumption, and potential high radiation-hardness.

  10. Floating-Gate Manipulated Graphene-Black Phosphorus Heterojunction for Nonvolatile Ambipolar Schottky Junction Memories, Memory Inverter Circuits, and Logic Rectifiers.

    Science.gov (United States)

    Li, Dong; Chen, Mingyuan; Zong, Qijun; Zhang, Zengxing

    2017-10-11

    The Schottky junction is an important unit in electronics and optoelectronics. However, its properties greatly degrade with device miniaturization. The fast development of circuits has fueled a rapid growth in the study of two-dimensional (2D) crystals, which may lead to breakthroughs in the semiconductor industry. Here we report a floating-gate manipulated nonvolatile ambipolar Schottky junction memory from stacked all-2D layers of graphene-BP/h-BN/graphene (BP, black phosphorus; h-BN, hexagonal boron nitride) in a designed floating-gate field-effect Schottky barrier transistor configuration. By manipulating the voltage pulse applied to the control gate, the device exhibits ambipolar characteristics and can be tuned to act as graphene-p-BP or graphene-n-BP junctions with reverse rectification behavior. Moreover, the junction exhibits good storability properties of more than 10 years and is also programmable. On the basis of these characteristics, we further demonstrate the application of the device to dual-mode nonvolatile Schottky junction memories, memory inverter circuits, and logic rectifiers.

  11. NVL-C: Static Analysis Techniques for Efficient, Correct Programming of Non-Volatile Main Memory Systems

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Seyong [ORNL; Vetter, Jeffrey S [ORNL

    2016-01-01

    Computer architecture experts expect that non-volatile memory (NVM) hierarchies will play a more significant role in future systems including mobile, enterprise, and HPC architectures. With this expectation in mind, we present NVL-C: a novel programming system that facilitates the efficient and correct programming of NVM main memory systems. The NVL-C programming abstraction extends C with a small set of intuitive language features that target NVM main memory, and can be combined directly with traditional C memory model features for DRAM. We have designed these new features to enable compiler analyses and run-time checks that can improve performance and guard against a number of subtle programming errors, which, when left uncorrected, can corrupt NVM-stored data. Moreover, to enable recovery of data across application or system failures, these NVL-C features include a flexible directive for specifying NVM transactions. So that our implementation might be extended to other compiler front ends and languages, the majority of our compiler analyses are implemented in an extended version of LLVM's intermediate representation (LLVM IR). We evaluate NVL-C on a number of applications to show its flexibility, performance, and correctness.

  12. Bipolar resistive switching in graphene oxide based metal insulator metal structure for non-volatile memory applications

    Science.gov (United States)

    Singh, Rakesh; Kumar, Ravi; Kumar, Anil; Kashyap, Rajesh; Kumar, Mukesh; Kumar, Dinesh

    2018-05-01

    Graphene oxide based devices have attracted much attention recently because of their possible application in next generation electronic devices. In this study, bipolar resistive switching characteristics of graphene oxide based metal insulator metal structure were investigated for nonvolatile memories. The graphene oxide was prepared by the conventional Hummer's method and deposited on ITO coated glass by spin-coating technique. The dominant mechanism of resistive switching is the formation and rupture of the conductive filament inside the graphene oxide. The conduction mechanism for low and high resistance states are dominated by two mechanism the ohmic conduction and space charge limited current (SCLC) mechanism, respectively. Atomic Force Microscopy, X-ray diffraction, Cyclic-Voltammetry were conducted to observe the morphology, structure and behavior of the material. The fabricated device with Al/GO/ITO structure exhibited reliable bipolar resistive switching with set & reset voltage of -2.3 V and 3V respectively.

  13. Nonvolatile memory characteristics influenced by the different crystallization of Ni-Si and Ni-N nanocrystals

    International Nuclear Information System (INIS)

    Chen, W.-R.; Yeh, J.-L.; Chang, C.-Y.; Chang, T.-C.; Chen, S.-C.

    2008-01-01

    The formation of Ni-Si and Ni-N nanocrystals by sputtering a Ni 0.3 Si 0.7 target in argon and nitrogen environment were proposed in this paper. A transmission electron microscope analysis shows the nanocrystals embedded in the nitride layer. X-ray photoelectron spectroscopy and x-ray diffraction also offer the chemical material analysis of nanocrystals with surrounding dielectric and the crystallization of nanocrystals for different thermal annealing treatments. Nonvolatile Ni-Si nanocrystal memories reveal superior electrical characteristics for charge storage capacity and reliability due to the improvement of thermal annealing treatment. In addition, we used energy band diagrams to explain the significance of surrounding dielectric for reliability

  14. Direct probing of electron and hole trapping into nano-floating-gate in organic field-effect transistor nonvolatile memories

    Energy Technology Data Exchange (ETDEWEB)

    Cui, Ze-Qun; Wang, Shun; Chen, Jian-Mei; Gao, Xu; Dong, Bin, E-mail: wangsd@suda.edu.cn, E-mail: chilf@suda.edu.cn, E-mail: bdong@suda.edu.cn; Chi, Li-Feng, E-mail: wangsd@suda.edu.cn, E-mail: chilf@suda.edu.cn, E-mail: bdong@suda.edu.cn; Wang, Sui-Dong, E-mail: wangsd@suda.edu.cn, E-mail: chilf@suda.edu.cn, E-mail: bdong@suda.edu.cn [Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123 (China)

    2015-03-23

    Electron and hole trapping into the nano-floating-gate of a pentacene-based organic field-effect transistor nonvolatile memory is directly probed by Kelvin probe force microscopy. The probing is straightforward and non-destructive. The measured surface potential change can quantitatively profile the charge trapping, and the surface characterization results are in good accord with the corresponding device behavior. Both electrons and holes can be trapped into the nano-floating-gate, with a preference of electron trapping than hole trapping. The trapped charge quantity has an approximately linear relation with the programming/erasing gate bias, indicating that the charge trapping in the device is a field-controlled process.

  15. Electrical bistabilities and memory stabilities of nonvolatile bistable devices fabricated utilizing C60 molecules embedded in a polymethyl methacrylate layer

    International Nuclear Information System (INIS)

    Cho, Sung Hwan; Lee, Dong Ik; Jung, Jae Hun; Kim, Tae Whan

    2009-01-01

    Current-voltage (I-V) measurements on Al/fullerene (C 60 ) molecules embedded in polymethyl methacrylate/Al devices at 300 K showed a current bistability due to the existence of the C 60 molecules. The on/off ratio of the current bistability for the memory devices was as large as 10 3 . The retention time of the devices was above 2.5 x 10 4 s at room temperature, and cycling endurance tests on these devices indicated that the ON and OFF currents showed no degradation until 50 000 cycles. Carrier transport mechanisms for the nonvolatile bistable devices are described on the basis of the I-V experimental and fitting results.

  16. Direct probing of electron and hole trapping into nano-floating-gate in organic field-effect transistor nonvolatile memories

    International Nuclear Information System (INIS)

    Cui, Ze-Qun; Wang, Shun; Chen, Jian-Mei; Gao, Xu; Dong, Bin; Chi, Li-Feng; Wang, Sui-Dong

    2015-01-01

    Electron and hole trapping into the nano-floating-gate of a pentacene-based organic field-effect transistor nonvolatile memory is directly probed by Kelvin probe force microscopy. The probing is straightforward and non-destructive. The measured surface potential change can quantitatively profile the charge trapping, and the surface characterization results are in good accord with the corresponding device behavior. Both electrons and holes can be trapped into the nano-floating-gate, with a preference of electron trapping than hole trapping. The trapped charge quantity has an approximately linear relation with the programming/erasing gate bias, indicating that the charge trapping in the device is a field-controlled process

  17. Flexible nonvolatile memory devices based on Au/PMMA nanocomposites deposited on PEDOT:PSS/Ag nanowire hybrid electrodes

    International Nuclear Information System (INIS)

    Sung, Sihyun; Kim, Tae Whan

    2017-01-01

    Highlights: • Flexible nonvolatile memory (NVM) devices fabricated utilizing Au nanoparticles (AuNPs) embedded in a PMMA layer were fabricated. • The insertion of the PEDOT:PSS layer enhanced the surface uniformity of the AgNW bottom electrode, resulting in improved device performances. • Current-voltage curves for the Al/PMMA:AuNP/PEDOT:PSS/AgNW/PET devices showed clockwise current hysteresis behaviors. • ON/OFF ratio of 1 × 10 3 was maintained for retention times longer than 1 × 10 4 s. • Memory characteristics of the NVM devices before and after bending were similar. - Abstract: Flexible nonvolatile memory (NVM) devices fabricated utilizing Au nanoparticles (AuNPs) embedded in a poly(methylmethacrylate) (PMMA) layer were fabricated on a silver nanowire (AgNW) or a poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)/AgNW coated on poly(ethylene terephthalate) (PET) substrates. The transmittance and the sheet resistance of the PEDOT:PSS/AgNW hybrid layer were approximately 89% and 50 Ω/sq, respectively, which were comparable to the values for commercial indium-tin-oxide (ITO) electrodes. Current-voltage curves for the Al/PMMA:AuNP/PEDOT:PSS/AgNW/PET devices at 300 K showed clockwise current hysteresis behaviors due to the existence of the AuNPs. The endurance number of ON/OFF switching for the NVM devices was above 30 cycles. An ON/OFF ratio of 1 × 10 3 was maintained for retention times longer than 1 × 10 4 s. The maximum memory margins of the NVM devices before and after bending were approximately 3.4 × 10 3 and 1.4 × 10 3 , respectively. The retention times of the devices before and after bending remained same 1 × 10 4 s. The memory margin and the stability of flexible NVMs fabricated on AgNW electrodes were enhanced due to the embedded PEDOT:PSS buffer layer.

  18. Flexible nonvolatile memory devices based on Au/PMMA nanocomposites deposited on PEDOT:PSS/Ag nanowire hybrid electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Sung, Sihyun; Kim, Tae Whan, E-mail: twk@hanyang.ac.kr

    2017-07-31

    Highlights: • Flexible nonvolatile memory (NVM) devices fabricated utilizing Au nanoparticles (AuNPs) embedded in a PMMA layer were fabricated. • The insertion of the PEDOT:PSS layer enhanced the surface uniformity of the AgNW bottom electrode, resulting in improved device performances. • Current-voltage curves for the Al/PMMA:AuNP/PEDOT:PSS/AgNW/PET devices showed clockwise current hysteresis behaviors. • ON/OFF ratio of 1 × 10{sup 3} was maintained for retention times longer than 1 × 10{sup 4} s. • Memory characteristics of the NVM devices before and after bending were similar. - Abstract: Flexible nonvolatile memory (NVM) devices fabricated utilizing Au nanoparticles (AuNPs) embedded in a poly(methylmethacrylate) (PMMA) layer were fabricated on a silver nanowire (AgNW) or a poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)/AgNW coated on poly(ethylene terephthalate) (PET) substrates. The transmittance and the sheet resistance of the PEDOT:PSS/AgNW hybrid layer were approximately 89% and 50 Ω/sq, respectively, which were comparable to the values for commercial indium-tin-oxide (ITO) electrodes. Current-voltage curves for the Al/PMMA:AuNP/PEDOT:PSS/AgNW/PET devices at 300 K showed clockwise current hysteresis behaviors due to the existence of the AuNPs. The endurance number of ON/OFF switching for the NVM devices was above 30 cycles. An ON/OFF ratio of 1 × 10{sup 3} was maintained for retention times longer than 1 × 10{sup 4} s. The maximum memory margins of the NVM devices before and after bending were approximately 3.4 × 10{sup 3} and 1.4 × 10{sup 3}, respectively. The retention times of the devices before and after bending remained same 1 × 10{sup 4} s. The memory margin and the stability of flexible NVMs fabricated on AgNW electrodes were enhanced due to the embedded PEDOT:PSS buffer layer.

  19. Design of a memory-access controller with 3.71-times-enhanced energy efficiency for Internet-of-Things-oriented nonvolatile microcontroller unit

    Science.gov (United States)

    Natsui, Masanori; Hanyu, Takahiro

    2018-04-01

    In realizing a nonvolatile microcontroller unit (MCU) for sensor nodes in Internet-of-Things (IoT) applications, it is important to solve the data-transfer bottleneck between the central processing unit (CPU) and the nonvolatile memory constituting the MCU. As one circuit-oriented approach to solving this problem, we propose a memory access minimization technique for magnetoresistive-random-access-memory (MRAM)-embedded nonvolatile MCUs. In addition to multiplexing and prefetching of memory access, the proposed technique realizes efficient instruction fetch by eliminating redundant memory access while considering the code length of the instruction to be fetched and the transition of the memory address to be accessed. As a result, the performance of the MCU can be improved while relaxing the performance requirement for the embedded MRAM, and compact and low-power implementation can be performed as compared with the conventional cache-based one. Through the evaluation using a system consisting of a general purpose 32-bit CPU and embedded MRAM, it is demonstrated that the proposed technique increases the peak efficiency of the system up to 3.71 times, while a 2.29-fold area reduction is achieved compared with the cache-based one.

  20. Effect of tunneling layers on the performances of floating-gate based organic thin-film transistor nonvolatile memories

    International Nuclear Information System (INIS)

    Wang, Wei; Han, Jinhua; Ying, Jun; Xiang, Lanyi; Xie, Wenfa

    2014-01-01

    Two types of floating-gate based organic thin-film transistor nonvolatile memories (FG-OTFT-NVMs) were demonstrated, with poly(methyl methacrylate co glycidyl methacrylate) (P(MMA-GMA)) and tetratetracontane (TTC) as the tunneling layer, respectively. Their device performances were measured and compared. In the memory with a P(MMA-GMA) tunneling layer, typical unipolar hole transport was obtained with a relatively small mobility of 0.16 cm 2 /V s. The unidirectional shift of turn-on voltage (V on ) due to only holes trapped/detrapped in/from the floating gate resulted in a small memory window of 12.5 V at programming/erasing voltages (V P /V E ) of ±100 V and a nonzero reading voltage. Benefited from the well-ordered molecule orientation and the trap-free surface of TTC layer, a considerably high hole mobility of 1.7 cm 2 /V s and a visible feature of electrons accumulated in channel and trapped in floating-gate were achieved in the memory with a TTC tunneling layer. High hole mobility resulted in a high on current and a large memory on/off ratio of 600 at the V P /V E of ±100 V. Both holes and electrons were injected into floating-gate and overwritten each other, which resulted in a bidirectional V on shift. As a result, an enlarged memory window of 28.6 V at the V P /V E of ±100 V and a zero reading voltage were achieved. Based on our results, a strategy is proposed to optimize FG-OTFT-NVMs by choosing a right tunneling layer to improve the majority carrier mobility and realize ambipolar carriers injecting and trapping in the floating-gate.

  1. Effect of tunneling layers on the performances of floating-gate based organic thin-film transistor nonvolatile memories

    Science.gov (United States)

    Wang, Wei; Han, Jinhua; Ying, Jun; Xiang, Lanyi; Xie, Wenfa

    2014-09-01

    Two types of floating-gate based organic thin-film transistor nonvolatile memories (FG-OTFT-NVMs) were demonstrated, with poly(methyl methacrylate co glycidyl methacrylate) (P(MMA-GMA)) and tetratetracontane (TTC) as the tunneling layer, respectively. Their device performances were measured and compared. In the memory with a P(MMA-GMA) tunneling layer, typical unipolar hole transport was obtained with a relatively small mobility of 0.16 cm2/V s. The unidirectional shift of turn-on voltage (Von) due to only holes trapped/detrapped in/from the floating gate resulted in a small memory window of 12.5 V at programming/erasing voltages (VP/VE) of ±100 V and a nonzero reading voltage. Benefited from the well-ordered molecule orientation and the trap-free surface of TTC layer, a considerably high hole mobility of 1.7 cm2/V s and a visible feature of electrons accumulated in channel and trapped in floating-gate were achieved in the memory with a TTC tunneling layer. High hole mobility resulted in a high on current and a large memory on/off ratio of 600 at the VP/VE of ±100 V. Both holes and electrons were injected into floating-gate and overwritten each other, which resulted in a bidirectional Von shift. As a result, an enlarged memory window of 28.6 V at the VP/VE of ±100 V and a zero reading voltage were achieved. Based on our results, a strategy is proposed to optimize FG-OTFT-NVMs by choosing a right tunneling layer to improve the majority carrier mobility and realize ambipolar carriers injecting and trapping in the floating-gate.

  2. Embedded nonvolatile memory devices with various silicon nitride energy band gaps on glass used for flat panel display applications

    International Nuclear Information System (INIS)

    Son, Dang Ngoc; Van Duy, Nguyen; Jung, Sungwook; Yi, Junsin

    2010-01-01

    Nonvolatile memory (NVM) devices with a nitride–nitride–oxynitride stack structure on a rough poly-silicon (poly-Si) surface were fabricated using a low-temperature poly-Si (LTPS) thin film transistor technology on glass substrates for application of flat panel display (FPD). The plasma-assisted oxidation/nitridation method is used to form a uniform oxynitride with an ultrathin tunneling layer on a rough LTPS surface. The NVMs, using a Si-rich silicon nitride film as a charge-trapping layer, were proposed as one of the solutions for the improvement of device performance such as the program/erase speed, the memory window and the charge retention characteristics. To further improve the vertical scaling and charge retention characteristics of NVM devices, the high-κ high-density N-rich SiN x films are used as a blocking layer. The fabricated NVM devices have outstanding electrical properties, such as a low threshold voltage, a high ON/OFF current ratio, a low subthreshold swing, a low operating voltage of less than ±9 V and a large memory window of 3.7 V, which remained about 1.9 V over a period of 10 years. These characteristics are suitable for electrical switching and data storage with in FPD application

  3. High‐Performance Nonvolatile Organic Field‐Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers

    Science.gov (United States)

    Li, Wen; Guo, Fengning; Ling, Haifeng; Zhang, Peng; Wang, Laiyuan; Wu, Dequn

    2017-01-01

    Nonvolatile organic field‐effect transistor (OFET) memory devices based on pentacene/N,N′‐ditridecylperylene‐3,4,9,10‐tetracarboxylic diimide (P13)/pentacene trilayer organic heterostructures have been proposed. The discontinuous n‐type P13 embedded in p‐type pentacene layers can not only provide electrons in the semiconductor layer that facilitates electron trapping process; it also works as charge trapping sites, which is attributed to the quantum well‐like pentacene/P13/pentacene organic heterostructures. The synergistic effects of charge trapping in the discontinuous P13 and the charge‐trapping property of the poly(4‐vinylphenol) (PVP) layer remarkably improve the memory performance. In addition, the trilayer organic heterostructures have also been successfully applied to multilevel and flexible nonvolatile memory devices. The results provide a novel design strategy to achieve high‐performance nonvolatile OFET memory devices and allow potential applications for different combinations of various organic semiconductor materials in OFET memory. PMID:28852619

  4. Highly conducting leakage-free electrolyte for SrCoOx-based non-volatile memory device

    Science.gov (United States)

    Katase, Takayoshi; Suzuki, Yuki; Ohta, Hiromichi

    2017-10-01

    The electrochemical switching of SrCoOx-based non-volatile memory with a thin-film-transistor structure was examined by using liquid-leakage-free electrolytes with different conductivities (σ) as the gate insulator. We first examined leakage-free water, which is incorporated in the amorphous (a-) 12CaO.7Al2O3 film with a nanoporous structure (Calcium Aluminate with Nanopore), but the electrochemical oxidation/reduction of the SrCoOx layer required the application of a high gate voltage (Vg) up to 20 V for a very long current-flowing-time (t) ˜40 min, primarily due to the low σ [2.0 × 10-8 S cm-1 at room temperature (RT)] of leakage-free water. We then controlled the σ of the leakage-free electrolyte, infiltrated in the a-NaxTaO3 film with a nanopillar array structure, from 8.0 × 10-8 S cm-1 to 2.5 × 10-6 S cm-1 at RT by changing the x = 0.01-1.0. As the result, the t, required for the metallization of the SrCoOx layer under small Vg = -3 V, becomes two orders of magnitude shorter with increase of the σ of the a-NaxTaO3 leakage-free electrolyte. These results indicate that the ion migration in the leakage-free electrolyte is the rate-determining step for the electrochemical switching, compared to the other electrochemical process, and the high σ of the leakage-free electrolyte is the key factor for the development of the non-volatile SrCoOx-based electro-magnetic phase switching device.

  5. Models for Total-Dose Radiation Effects in Non-Volatile Memory

    Energy Technology Data Exchange (ETDEWEB)

    Campbell, Philip Montgomery; Wix, Steven D.

    2017-04-01

    The objective of this work is to develop models to predict radiation effects in non- volatile memory: flash memory and ferroelectric RAM. In flash memory experiments have found that the internal high-voltage generators (charge pumps) are the most sensitive to radiation damage. Models are presented for radiation effects in charge pumps that demonstrate the experimental results. Floating gate models are developed for the memory cell in two types of flash memory devices by Intel and Samsung. These models utilize Fowler-Nordheim tunneling and hot electron injection to charge and erase the floating gate. Erase times are calculated from the models and compared with experimental results for different radiation doses. FRAM is less sensitive to radiation than flash memory, but measurements show that above 100 Krad FRAM suffers from a large increase in leakage current. A model for this effect is developed which compares closely with the measurements.

  6. Crossbar memory array of organic bistable rectifying diodes for nonvolatile data storage

    NARCIS (Netherlands)

    Asadi, Kamal; Li, Mengyuan; Stingelin, Natalie; Blom, Paul W. M.; de Leeuw, Dago M.

    2010-01-01

    Cross-talk in memories using resistive switches in a cross-bar geometry can be prevented by integration of a rectifying diode. We present a functional cross bar memory array using a phase separated blend of a ferroelectric and a semiconducting polymer as storage medium. Each intersection acts

  7. Logic gates realized by nonvolatile GeTe/Sb2Te3 super lattice phase-change memory with a magnetic field input

    Science.gov (United States)

    Lu, Bin; Cheng, Xiaomin; Feng, Jinlong; Guan, Xiawei; Miao, Xiangshui

    2016-07-01

    Nonvolatile memory devices or circuits that can implement both storage and calculation are a crucial requirement for the efficiency improvement of modern computer. In this work, we realize logic functions by using [GeTe/Sb2Te3]n super lattice phase change memory (PCM) cell in which higher threshold voltage is needed for phase change with a magnetic field applied. First, the [GeTe/Sb2Te3]n super lattice cells were fabricated and the R-V curve was measured. Then we designed the logic circuits with the super lattice PCM cell verified by HSPICE simulation and experiments. Seven basic logic functions are first demonstrated in this letter; then several multi-input logic gates are presented. The proposed logic devices offer the advantages of simple structures and low power consumption, indicating that the super lattice PCM has the potential in the future nonvolatile central processing unit design, facilitating the development of massive parallel computing architecture.

  8. Nonvolatile write-once-read-many-times memory device with functionalized-nanoshells/PEDOT:PSS nanocomposites

    International Nuclear Information System (INIS)

    Avila-Nino, J.A.; Segura-Cardenas, E.; Sustaita, A.O.; Cruz-Cruz, I.; Lopez-Sandoval, R.; Reyes-Reyes, M.

    2011-01-01

    We have investigated the memory effect of the nanocomposites of functionalized carbon nanoshells (f-CNSs) mixed with poly(3,4-ethylenedioxythiophene) doped with polystyrenesulfonate (PEDOT:PSS) polymer. The f-CNSs were synthesized by the spray pyrolysis method and functionalized in situ with functional groups (OH, COOH, C-H, C-OH) with the aim of improving their compatibility in the aqueous dispersion of PEDOT:PSS. The current-voltage (I-V) sweep curves at room temperature for the Al/f-CNSs, for certain concentrations range, embedded in a PEDOT:PSS layer/Al devices showed electrical bistability for write-once-read-many-times (WORM) memory devices. The memory effect observed in the devices can be explained due to the existence of trapped charges in the f-CNSs/PEDOT:PSS layer. The carrier transport mechanisms for the memory devices is studied and discussed.

  9. Nonvolatile write-once-read-many-times memory device with functionalized-nanoshells/PEDOT:PSS nanocomposites

    Energy Technology Data Exchange (ETDEWEB)

    Avila-Nino, J.A.; Segura-Cardenas, E. [Universidad Autonoma de San Luis Potosi, Instituto de Investigacion en Comunicacion Optica, Alvaro Obregon 64 Zona Centro, 78000 SLP (Mexico); Sustaita, A.O. [Instituto Potosino de Investigacion Cientifica y Tecnologica, Camino a la presa San Jose 2055, CP 78216, San Luis Potosi (Mexico); Cruz-Cruz, I. [Universidad Autonoma de San Luis Potosi, Instituto de Investigacion en Comunicacion Optica, Alvaro Obregon 64 Zona Centro, 78000 SLP (Mexico); Lopez-Sandoval, R. [Instituto Potosino de Investigacion Cientifica y Tecnologica, Camino a la presa San Jose 2055, CP 78216, San Luis Potosi (Mexico); Reyes-Reyes, M., E-mail: reyesm@iico.uaslp.mx [Universidad Autonoma de San Luis Potosi, Instituto de Investigacion en Comunicacion Optica, Alvaro Obregon 64 Zona Centro, 78000 SLP (Mexico)

    2011-03-25

    We have investigated the memory effect of the nanocomposites of functionalized carbon nanoshells (f-CNSs) mixed with poly(3,4-ethylenedioxythiophene) doped with polystyrenesulfonate (PEDOT:PSS) polymer. The f-CNSs were synthesized by the spray pyrolysis method and functionalized in situ with functional groups (OH, COOH, C-H, C-OH) with the aim of improving their compatibility in the aqueous dispersion of PEDOT:PSS. The current-voltage (I-V) sweep curves at room temperature for the Al/f-CNSs, for certain concentrations range, embedded in a PEDOT:PSS layer/Al devices showed electrical bistability for write-once-read-many-times (WORM) memory devices. The memory effect observed in the devices can be explained due to the existence of trapped charges in the f-CNSs/PEDOT:PSS layer. The carrier transport mechanisms for the memory devices is studied and discussed.

  10. Ambipolar nonvolatile memory based on a quantum-dot transistor with a nanoscale floating gate

    International Nuclear Information System (INIS)

    Che, Yongli; Zhang, Yating; Song, Xiaoxian; Cao, Mingxuan; Zhang, Guizhong; Yao, Jianquan; Cao, Xiaolong; Dai, Haitao; Yang, Junbo

    2016-01-01

    Using only solution processing methods, we developed ambipolar quantum-dot (QD) transistor floating-gate memory (FGM) that uses Au nanoparticles as a floating gate. Because of the bipolarity of the active channel of PbSe QDs, the memory could easily trap holes or electrons in the floating gate by programming/erasing (P/E) operations, which could shift the threshold voltage both up and down. As a result, the memory exhibited good programmable memory characteristics: a large memory window (ΔV th  ∼ 15 V) and a long retention time (>10 5  s). The magnitude of ΔV th depended on both P/E voltages and the bias voltage (V DS ): ΔV th was a cubic function to V P/E and linearly depended on V DS . Therefore, this FGM based on a QD transistor is a promising alternative to its inorganic counterparts owing to its advantages of bipolarity, high mobility, low cost, and large-area production.

  11. Ambipolar nonvolatile memory based on a quantum-dot transistor with a nanoscale floating gate

    Energy Technology Data Exchange (ETDEWEB)

    Che, Yongli; Zhang, Yating, E-mail: yating@tju.edu.cn; Song, Xiaoxian; Cao, Mingxuan; Zhang, Guizhong; Yao, Jianquan [Institute of Laser and Opto-Electronics, College of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin 300072 (China); Key Laboratory of Opto-Electronics Information Technology, Ministry of Education, Tianjin University, Tianjin 300072 (China); Cao, Xiaolong [Institute of Laser and Opto-Electronics, College of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin 300072 (China); Key Laboratory of Opto-Electronics Information Technology, Ministry of Education, Tianjin University, Tianjin 300072 (China); College of Mechanical and Electronic Engineering, Shandong University of Science and Technology, Qingdao 266590 (China); Dai, Haitao [Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Science, Tianjin University, Tianjin 300072 (China); Yang, Junbo [Center of Material Science, National University of Defense Technology, Changsha 410073 (China)

    2016-07-04

    Using only solution processing methods, we developed ambipolar quantum-dot (QD) transistor floating-gate memory (FGM) that uses Au nanoparticles as a floating gate. Because of the bipolarity of the active channel of PbSe QDs, the memory could easily trap holes or electrons in the floating gate by programming/erasing (P/E) operations, which could shift the threshold voltage both up and down. As a result, the memory exhibited good programmable memory characteristics: a large memory window (ΔV{sub th} ∼ 15 V) and a long retention time (>10{sup 5 }s). The magnitude of ΔV{sub th} depended on both P/E voltages and the bias voltage (V{sub DS}): ΔV{sub th} was a cubic function to V{sub P/E} and linearly depended on V{sub DS}. Therefore, this FGM based on a QD transistor is a promising alternative to its inorganic counterparts owing to its advantages of bipolarity, high mobility, low cost, and large-area production.

  12. Silicon photonic integrated circuits with electrically programmable non-volatile memory functions.

    Science.gov (United States)

    Song, J-F; Lim, A E-J; Luo, X-S; Fang, Q; Li, C; Jia, L X; Tu, X-G; Huang, Y; Zhou, H-F; Liow, T-Y; Lo, G-Q

    2016-09-19

    Conventional silicon photonic integrated circuits do not normally possess memory functions, which require on-chip power in order to maintain circuit states in tuned or field-configured switching routes. In this context, we present an electrically programmable add/drop microring resonator with a wavelength shift of 426 pm between the ON/OFF states. Electrical pulses are used to control the choice of the state. Our experimental results show a wavelength shift of 2.8 pm/ms and a light intensity variation of ~0.12 dB/ms for a fixed wavelength in the OFF state. Theoretically, our device can accommodate up to 65 states of multi-level memory functions. Such memory functions can be integrated into wavelength division mutiplexing (WDM) filters and applied to optical routers and computing architectures fulfilling large data downloading demands.

  13. The origin of traps and the effect of nitrogen plasma in oxide-nitride-oxide structures for non-volatile memories

    International Nuclear Information System (INIS)

    Kim, W. S.; Kwak, D. W.; Oh, J. S.; Lee, D. W.; Cho, H. Y.

    2010-01-01

    Ultrathin oxide-nitride-oxide (ONO) dielectric stacked layers are fundamental structures of silicon-oxide-nitride-oxide-silicon (SONOS) non-volatile memory devices in which information is known to be stored as charges trapped in silicon nitride. Deep-level transient spectroscopy (DLTS) and a capacitance-voltage (CV) analysis were introduced to observe the trap behavior related to the memory effect in memory devices. The DLTS results verified that the nitride-related traps were a dominant factor in the memory effect. The energy of hole traps was 0.307 eV above the balance band. To improve the memory effects of the non-volatile memory devices with ONO structures, we introduced a nitrogen plasma treatment. After the N-plasma treatment, the flat-band voltage shift (ΔV FB ) was increased by about 1.5 times. The program and the erase (P-E) characteristics were also shown to be better than those for the as-ONO structure. In addition, the retention characteristics were improved by over 2.4 times.

  14. Studies on nonvolatile resistance memory switching in ZnO thin films

    Indian Academy of Sciences (India)

    Six decades of research on ZnO has recently sprouted a new branch in the domain of resistive random access memories. Highly resistive and c-axis oriented ZnO thin films were grown by us using d.c. discharge assisted pulsed laser deposition on Pt/Ti/SiO2/Si substrates at room temperature. The resistive switching ...

  15. Thin PZT-Based Ferroelectric Capacitors on Flexible Silicon for Nonvolatile Memory Applications

    KAUST Repository

    Ghoneim, Mohamed T.; Zidan, Mohammed A.; Al-Nassar, Mohammed Y.; Hanna, Amir; Kosel, Jü rgen; Salama, Khaled N.; Hussain, Muhammad Mustafa

    2015-01-01

    A flexible version of traditional thin lead zirconium titanate ((Pb1.1Zr0.48Ti0.52O3)-(PZT)) based ferroelectric random access memory (FeRAM) on silicon shows record performance in flexible arena. The thin PZT layer requires lower operational

  16. Studies on nonvolatile resistance memory switching in ZnO thin films

    Indian Academy of Sciences (India)

    Administrator

    (Kund et al 2005), phase change random access memory. (PRAM) (Lai 2003) and ..... 2008) and can be explained in terms of the aforemen- tioned filamentary ... Zhang S, Long S, Guan W, Liu Q, Wang Q and Liu M 2009 J. Phys. D: Appl. Phys.

  17. Integration of ammonia-plasma-functionalized graphene nanodiscs as charge trapping centers for nonvolatile memory applications

    KAUST Repository

    Wang, Jer-Chyi; Chang, Kai-Ping; Lin, Chih-Ting; Su, Ching-Yuan; Gü neş, Fethullah; Boutchich, Mohamed; Chen, Chang-Hsiao; Chen, Ching-Hsiang; Chen, Ching-Shiun; Li, Lain-Jong; Lai, Chao-Sung

    2016-01-01

    that act as CTSs, as observed by Raman and Fourier transform infrared spectroscopy. This inherently enhances the density of CTSs in the GNDs, as a result, the memory window becomes more than 2.4 V and remains stable after 104 operating cycles. The charge

  18. Multilevel characteristics and memory mechanisms for nonvolatile memory devices based on CuInS2 quantum dot-polymethylmethacrylate nanocomposites

    International Nuclear Information System (INIS)

    Zhou, Yang; Yun, Dong Yeol; Kim, Tae Whan; Kim, Sang Wook

    2014-01-01

    Nonvolatile memory devices based on CuInS 2 (CIS) quantum dots (QDs) embedded in a polymethylmethacrylate (PMMA) layer were fabricated using spin-coating method. The memory window widths of the capacitance-voltage (C-V) curves for the Al/CIS QDs embedded in PMMA layer/p-Si devices were 0.3, 0.6, and 1.0 V for sweep voltages of ±3, ±5, and ±7 V, respectively. Capacitance-cycle data demonstrated that the charge-trapping capability of the devices with an ON/OFF ratio value of 2.81 × 10 −10 was maintained for 8 × 10 3 cycles without significant degradation and that the extrapolation of the ON/OFF ratio value to 1 × 10 6 cycles converged to 2.40 × 10 −10 , indicative of the good stability of the devices. The memory mechanisms for the devices are described on the basis of the C-V curves and the energy-band diagrams

  19. Impact of time and space evolution of ion tracks in nonvolatile memory cells approaching nanoscale

    International Nuclear Information System (INIS)

    Cellere, G.; Paccagnella, A.; Murat, M.; Barak, J.; Akkerman, A.; Harboe-Sorensen, R.; Virtanen, A.; Visconti, A.; Bonanomi, M.

    2010-01-01

    Swift heavy ions impacting on matter lose energy through the creation of dense tracks of charges. The study of the space and time evolution of energy exchange allows understanding the single event effects behavior in advanced microelectronic devices. In particular, the shrinking of minimum feature size of most advanced memory devices makes them very interesting test vehicles to study these effects since the device and the track dimensions are comparable; hence, measured effects are directly correlated with the time and space evolution of the energy release. In this work we are studying the time and space evolution of ion tracks by using advanced non volatile memories and Monte Carlo simulations. Experimental results are very well explained by the theoretical calculations.

  20. Silicon-based thin films as bottom electrodes in chalcogenide nonvolatile memories

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Seung-Yun [IT Convergence and Components Laboratory, Electronics and Telecommunications Research Institute (ETRI), Yuseong-gu, Daejeon 305-350 (Korea, Republic of)], E-mail: seungyun@etri.re.kr; Yoon, Sung-Min; Choi, Kyu-Jeong; Lee, Nam-Yeal; Park, Young-Sam; Ryu, Sang-Ouk; Yu, Byoung-Gon; Kim, Sang-Hoon; Lee, Sang-Heung [IT Convergence and Components Laboratory, Electronics and Telecommunications Research Institute (ETRI), Yuseong-gu, Daejeon 305-350 (Korea, Republic of)

    2007-10-31

    The effect of the electrical resistivity of a silicon-germanium (SiGe) thin film on the phase transition in a GeSbTe (GST) chalcogenide alloy and the manufacturing aspect of the fabrication process of a chalcogenide memory device employing the SiGe film as bottom electrodes were investigated. While p-type SiGe bottom electrodes were formed using in situ doping techniques, n-type ones could be made in a different manner where phosphorus atoms diffused from highly doped silicon underlayers to undoped SiGe films. The p-n heterojunction did not form between the p-type GST and n-type SiGe layers, and the semiconduction type of the SiGe alloys did not influence the memory device switching. It was confirmed that an optimum resistivity value existed for memory operation in spite of proportionality of Joule heating to electrical resistivity. The very high resistivity of the SiGe film had no effect on the reduction of reset current, which might result from the resistance decrease of the SiGe alloy at high temperatures.

  1. In search of the next memory inside the circuitry from the oldest to the emerging non-volatile memories

    CERN Document Server

    Campardo, Giovanni

    2017-01-01

    This book provides students and practicing chip designers with an easy-to-follow yet thorough, introductory treatment of the most promising emerging memories under development in the industry. Focusing on the chip designer rather than the end user, this book offers expanded, up-to-date coverage of emerging memories circuit design. After an introduction on the old solid-state memories and the fundamental limitations soon to be encountered, the working principle and main technology issues of each of the considered technologies (PCRAM, MRAM, FeRAM, ReRAM) are reviewed and a range of topics related to design is explored: the array organization, sensing and writing circuitry, programming algorithms and error correction techniques are reviewed comparing the approach followed and the constraints for each of the technologies considered. Finally the issue of radiation effects on memory devices has been briefly treated. Additionally some considerations are entertained about how emerging memories can find a place in the...

  2. A study on low-power, nanosecond operation and multilevel bipolar resistance switching in Ti/ZrO2/Pt nonvolatile memory with 1T1R architecture

    International Nuclear Information System (INIS)

    Wu, Ming-Chi; Tseng, Tseung-Yuen; Jang, Wen-Yueh; Lin, Chen-Hsi

    2012-01-01

    Low-power, bipolar resistive switching (RS) characteristics in the Ti/ZrO 2 /Pt nonvolatile memory with one transistor and one resistor (1T1R) architecture were reported. Multilevel storage behavior was observed by modulating the amplitude of the MOSFET gate voltage, in which the transistor functions as a current limiter. Furthermore, multilevel storage was also executed by controlling the reset voltage, leading the resistive random access memory (RRAM) to the multiple metastable low resistance state (LRS). The experimental results on the measured electrical properties of the various sized devices confirm that the RS mechanism of the Ti/ZrO 2 /Pt structure obeys the conducting filaments model. In application, the devices exhibit high-speed switching performances (250 ns) with suitable high/low resistance state ratio (HRS/LRS > 10). The LRS of the devices with 10 year retention ability at 80 °C, based on the Arrhenius equation, is also demonstrated in the thermal accelerating test. Furthermore, the ramping gate voltage method with fixed drain voltage is used to switch the 1T1R memory cells for upgrading the memory performances. Our experimental results suggest that the ZrO 2 -based RRAM is a prospective alternative for nonvolatile multilevel memory device applications. (paper)

  3. Subattoampere current induced by single ions in silicon oxide layers of nonvolatile memory cells

    International Nuclear Information System (INIS)

    Cellere, G.; Paccagnella, A.; Larcher, L.; Visconti, A.; Bonanomi, M.

    2006-01-01

    A single ion impinging on a thin silicon dioxide layer generates a number of electron/hole pairs proportional to its linear energy transfer coefficient. Defects generated by recombination can act as a conductive path for electrons that cross the oxide barrier, thanks to a multitrap-assisted mechanism. We present data on the dependence of this phenomenon on the oxide thickness by using floating gate memory arrays. The tiny number of excess electrons stored in these devices allows for extremely high sensitivity, impossible with any direct measurement of oxide leakage current. Results are of particular interest for next generation devices

  4. Improved memory characteristics by NH3-nitrided GdO as charge storage layer for nonvolatile memory applications

    International Nuclear Information System (INIS)

    Liu, L.; Xu, J. P.; Ji, F.; Chen, J. X.; Lai, P. T.

    2012-01-01

    Charge-trapping memory capacitor with nitrided gadolinium oxide (GdO) as charge storage layer (CSL) is fabricated, and the influence of post-deposition annealing in NH 3 on its memory characteristics is investigated. Transmission electron microscopy, x-ray photoelectron spectroscopy, and x-ray diffraction are used to analyze the cross-section and interface quality, composition, and crystallinity of the stack gate dielectric, respectively. It is found that nitrogen incorporation can improve the memory window and achieve a good trade-off among the memory properties due to NH 3 -annealing-induced reasonable distribution profile of a large quantity of deep-level bulk traps created in the nitrided GdO film and reduction of shallow traps near the CSL/SiO 2 interface.

  5. The microstructure investigation of GeTi thin film used for non-volatile memory

    International Nuclear Information System (INIS)

    Shen Jie; Liu Bo; Song Zhitang; Xu Cheng; Liang Shuang; Feng Songlin; Chen Bomy

    2008-01-01

    GeTi thin film has been found to have the reversible resistance switching property in our previous work. In this paper, the microstructure of this material with a given composition was investigated. The film was synthesized by magnetron sputtering and treated by the rapid temperature process. The results indicate a coexist status of amorphous and polycrystalline states in the as-deposited GeTi film, and the grains in the film are extremely fine. Furthermore, not until the film annealed at 600 deg. C, can the polycrystalline state be detected by X-ray diffraction. Based on the morphological analysis, the sputtered GeTi has the column growth tendency, and the column structure vanishes with the temperature increasing. The microstructure and thermal property analysis indicate that GeTi does not undergo evident phase change process during the annealing process, which makes the switching mechanism of GeTi different from that of chalcogenide memory material, the most widely used phase change memory material

  6. Organic nonvolatile resistive memory devices based on thermally deposited Au nanoparticle

    Science.gov (United States)

    Jin, Zhiwen; Liu, Guo; Wang, Jizheng

    2013-05-01

    Uniform Au nanoparticles (NPs) are formed by thermally depositing nominal 2-nm thick Au film on a 10-nm thick polyimide film formed on a Al electrode, and then covered by a thin polymer semiconductor film, which acts as an energy barrier for electrons to be injected from the other Al electrode (on top of polymer film) into the Au NPs, which are energetically electron traps in such a resistive random access memory (RRAM) device. The Au NPs based RRAM device exhibits estimated retention time of 104 s, cycle times of more than 100, and ON-OFF ratio of 102 to 103. The carrier transport properties are also analyzed by fitting the measured I-V curves with several conduction models.

  7. Fatigue-free lead zirconate titanate-based capacitors for nonvolatile memories

    International Nuclear Information System (INIS)

    Shannigrahi, S. R.; Jang, Hyun M.

    2001-01-01

    The development of lead zirconate titanate (PZT)-based capacitors has been a long time goal of ferroelectric random access memories (FRAM). However, PZT-based perovskites with common platinum (Pt) electrodes have suffered from a significant reduction of the remanent polarization (P r ) after a certain number of read/write cycles (electrical fatigue). We now report the development of fatigue-free lanthanum-modified PZT capacitors using common Pt electrodes. The capacitors fabricated at 580 o C by applying a PZT seed layer exhibited fatigue-free behavior up to 6.5 x 10 10 switching cycles, a quite stable charge retention profile with time, and comparatively high P r values, all of which assure their suitability for practical FRAM applications. Copyright 2001 American Institute of Physics

  8. High reliable and stable organic field-effect transistor nonvolatile memory with a poly(4-vinyl phenol) charge trapping layer based on a pn-heterojunction active layer

    Energy Technology Data Exchange (ETDEWEB)

    Xiang, Lanyi; Ying, Jun; Han, Jinhua; Zhang, Letian, E-mail: zlt@jlu.edu.cn, E-mail: wwei99@jlu.edu.cn; Wang, Wei, E-mail: zlt@jlu.edu.cn, E-mail: wwei99@jlu.edu.cn [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012 (China)

    2016-04-25

    In this letter, we demonstrate a high reliable and stable organic field-effect transistor (OFET) based nonvolatile memory (NVM) with a polymer poly(4-vinyl phenol) (PVP) as the charge trapping layer. In the unipolar OFETs, the inreversible shifts of the turn-on voltage (V{sub on}) and severe degradation of the memory window (ΔV{sub on}) at programming (P) and erasing (E) voltages, respectively, block their application in NVMs. The obstacle is overcome by using a pn-heterojunction as the active layer in the OFET memory, which supplied a holes and electrons accumulating channel at the supplied P and E voltages, respectively. Both holes and electrons transferring from the channels to PVP layer and overwriting the trapped charges with an opposite polarity result in the reliable bidirectional shifts of V{sub on} at P and E voltages, respectively. The heterojunction OFET exhibits excellent nonvolatile memory characteristics, with a large ΔV{sub on} of 8.5 V, desired reading (R) voltage at 0 V, reliable P/R/E/R dynamic endurance over 100 cycles and a long retention time over 10 years.

  9. In-chip optical CD measurements for non-volatile memory devices

    Science.gov (United States)

    Vasconi, Mauro; Kremer, Stephanie; Polli, M.; Severgnini, Ermes; Trovati, Silvia S.

    2006-03-01

    A potential limitation to a wider usage of the scatterometry technique for CD evaluation comes from its requirement of dedicated regular measurement gratings, located in wafer scribe lanes. In fact, the simplification of the original chip layout that is often requested to design these gratings may impact on their printed dimension and shape. Etched gratings might also suffer from micro-loading effects other than in the circuit. For all these reasons, measurements collected therein may not represent the real behavior of the device. On the other hand, memory devices come with large sectors that usually possess the characteristics required for a proper scatterometry evaluation. In particular, for a leading edge flash process this approach is in principle feasible for the most critical process steps. The impact of potential drawbacks, mainly lack of pattern regularity within the tool probe area, is investigated. More, a very large sampling plan on features with equal nominal CD and density spread over the same exposure shot becomes feasible, thus yielding a deeper insight of the overall lithographic process window and a quantitative method to evaluate process equipment performance along time by comparison to acceptance data and/or last preventive maintenance. All the results gathered in the device main array are compared to those collected in standard scatterometry targets, tailored to the characteristics of the considered layers in terms of designed CD, pitch, stack and orientation.

  10. Controlled fabrication of Si nanocrystal delta-layers in thin SiO{sub 2} layers by plasma immersion ion implantation for nonvolatile memories

    Energy Technology Data Exchange (ETDEWEB)

    Bonafos, C.; Ben-Assayag, G.; Groenen, J.; Carrada, M. [CEMES-CNRS and Université de Toulouse, 29 rue J. Marvig, 31055 Toulouse Cedex 04 (France); Spiegel, Y.; Torregrosa, F. [IBS, Rue G Imbert Prolongée, ZI Peynier-Rousset, 13790 Peynier (France); Normand, P.; Dimitrakis, P.; Kapetanakis, E. [NCSRD, Terma Patriarchou Gregoriou, 15310 Aghia Paraskevi (Greece); Sahu, B. S.; Slaoui, A. [ICube, 23 Rue du Loess, 67037 Strasbourg Cedex 2 (France)

    2013-12-16

    Plasma Immersion Ion Implantation (PIII) is a promising alternative to beam line implantation to produce a single layer of nanocrystals (NCs) in the gate insulator of metal-oxide semiconductor devices. We report herein the fabrication of two-dimensional Si-NCs arrays in thin SiO{sub 2} films using PIII and rapid thermal annealing. The effect of plasma and implantation conditions on the structural properties of the NC layers is examined by transmission electron microscopy. A fine tuning of the NCs characteristics is possible by optimizing the oxide thickness, implantation energy, and dose. Electrical characterization revealed that the PIII-produced-Si NC structures are appealing for nonvolatile memories.

  11. Non-exponential resistive switching in Ag2S memristors: a key to nanometer-scale non-volatile memory devices.

    Science.gov (United States)

    Gubicza, Agnes; Csontos, Miklós; Halbritter, András; Mihály, György

    2015-03-14

    The dynamics of resistive switchings in nanometer-scale metallic junctions formed between an inert metallic tip and an Ag film covered by a thin Ag2S layer are investigated. Our thorough experimental analysis and numerical simulations revealed that the resistance change upon a switching bias voltage pulse exhibits a strongly non-exponential behaviour yielding markedly different response times at different bias levels. Our results demonstrate the merits of Ag2S nanojunctions as nanometer-scale non-volatile memory cells with stable switching ratios, high endurance as well as fast response to write/erase, and an outstanding stability against read operations at technologically optimal bias and current levels.

  12. Controlled fabrication of Si nanocrystal delta-layers in thin SiO2 layers by plasma immersion ion implantation for nonvolatile memories

    International Nuclear Information System (INIS)

    Bonafos, C.; Ben-Assayag, G.; Groenen, J.; Carrada, M.; Spiegel, Y.; Torregrosa, F.; Normand, P.; Dimitrakis, P.; Kapetanakis, E.; Sahu, B. S.; Slaoui, A.

    2013-01-01

    Plasma Immersion Ion Implantation (PIII) is a promising alternative to beam line implantation to produce a single layer of nanocrystals (NCs) in the gate insulator of metal-oxide semiconductor devices. We report herein the fabrication of two-dimensional Si-NCs arrays in thin SiO 2 films using PIII and rapid thermal annealing. The effect of plasma and implantation conditions on the structural properties of the NC layers is examined by transmission electron microscopy. A fine tuning of the NCs characteristics is possible by optimizing the oxide thickness, implantation energy, and dose. Electrical characterization revealed that the PIII-produced-Si NC structures are appealing for nonvolatile memories

  13. High performance non-volatile ferroelectric copolymer memory based on a ZnO nanowire transistor fabricated on a transparent substrate

    International Nuclear Information System (INIS)

    Nedic, Stanko; Welland, Mark; Tea Chun, Young; Chu, Daping; Hong, Woong-Ki

    2014-01-01

    A high performance ferroelectric non-volatile memory device based on a top-gate ZnO nanowire (NW) transistor fabricated on a glass substrate is demonstrated. The ZnO NW channel was spin-coated with a poly (vinylidenefluoride-co-trifluoroethylene) (P(VDF-TrFE)) layer acting as a top-gate dielectric without buffer layer. Electrical conductance modulation and memory hysteresis are achieved by a gate electric field induced reversible electrical polarization switching of the P(VDF-TrFE) thin film. Furthermore, the fabricated device exhibits a memory window of ∼16.5 V, a high drain current on/off ratio of ∼10 5 , a gate leakage current below ∼300 pA, and excellent retention characteristics for over 10 4 s

  14. Resistive switching effect of N-doped MoS2-PVP nanocomposites films for nonvolatile memory devices

    Science.gov (United States)

    Wu, Zijin; Wang, Tongtong; Sun, Changqi; Liu, Peitao; Xia, Baorui; Zhang, Jingyan; Liu, Yonggang; Gao, Daqiang

    2017-12-01

    Resistive memory technology is very promising in the field of semiconductor memory devices. According to Liu et al, MoS2-PVP nanocomposite can be used as an active layer material for resistive memory devices due to its bipolar resistive switching behavior. Recent studies have also indicated that the doping of N element can reduce the band gap of MoS2 nanosheets, which is conducive to improving the conductivity of the material. Therefore, in this paper, we prepared N-doped MoS2 nanosheets and then fabricated N-doped MoS2-PVP nanocomposite films by spin coating. Finally, the resistive memory [C. Tan et al., Chem. Soc. Rev. 44, 2615 (2015)], device with ITO/N-doped MoS2-PVP/Pt structure was fabricated. Study on the I-V characteristics shows that the device has excellent resistance switching effect. It is worth mentioning that our device possesses a threshold voltage of 0.75 V, which is much better than 3.5 V reported previously for the undoped counterparts. The above research shows that N-doped MoS2-PVP nanocomposite films can be used as the active layer of resistive switching memory devices, and will make the devices have better performance.

  15. Radioactive resistance of memory elements

    International Nuclear Information System (INIS)

    Loncar, B.; Stankovic, S.; Novakovic, D.; Osmokrovic, P.

    1998-01-01

    In this paper, the results of semiconductor memories radioactive resistance examination (EPROM and EEPROM) are presented. Performance of semiconductor memories is most important, when working under high risk condition where there is an influence of radiation. This research is particularly interesting for specific applications in military industry and space technology. Therefore, the analysis of the degradation mechanism of these components as well as the possibilities to increase their radiation resistivity have been considered by many authors. The aim of this work is the examination of the reliability of EPROM and EEPROM characteristics under radiation. Total dose results are presented for the JL 27C512D EPROM and ST 24C02 EEPROM. There is evidence that EPROM are more sensitive to y radiation than EEPROM. The results obtained are analyzed theoretically via the interaction of gamma radiation with oxide layer. (authors)

  16. Nonvolatile memory thin-film transistors using biodegradable chicken albumen gate insulator and oxide semiconductor channel on eco-friendly paper substrate.

    Science.gov (United States)

    Kim, So-Jung; Jeon, Da-Bin; Park, Jung-Ho; Ryu, Min-Ki; Yang, Jong-Heon; Hwang, Chi-Sun; Kim, Gi-Heon; Yoon, Sung-Min

    2015-03-04

    Nonvolatile memory thin-film transistors (TFTs) fabricated on paper substrates were proposed as one of the eco-friendly electronic devices. The gate stack was composed of chicken albumen gate insulator and In-Ga-Zn-O semiconducting channel layers. All the fabrication processes were performed below 120 °C. To improve the process compatibility of the synthethic paper substrate, an Al2O3 thin film was introduced as adhesion and barrier layers by atomic layer deposition. The dielectric properties of biomaterial albumen gate insulator were also enhanced by the preparation of Al2O3 capping layer. The nonvolatile bistabilities were realized by the switching phenomena of residual polarization within the albumen thin film. The fabricated device exhibited a counterclockwise hysteresis with a memory window of 11.8 V, high on/off ratio of approximately 1.1 × 10(6), and high saturation mobility (μsat) of 11.5 cm(2)/(V s). Furthermore, these device characteristics were not markedly degraded even after the delamination and under the bending situration. When the curvature radius was set as 5.3 cm, the ION/IOFF ratio and μsat were obtained to be 5.9 × 10(6) and 7.9 cm(2)/(V s), respectively.

  17. Core-Shell Zn x Cd1- x Se/Zn y Cd1- y Se Quantum Dots for Nonvolatile Memory and Electroluminescent Device Applications

    Science.gov (United States)

    Al-Amoody, Fuad; Suarez, Ernesto; Rodriguez, Angel; Heller, E.; Huang, Wenli; Jain, F.

    2011-08-01

    This paper presents a floating quantum dot (QD) gate nonvolatile memory device using high-energy-gap Zn y Cd1- y Se-cladded Zn x Cd1- x Se quantum dots ( y > x) with tunneling layers comprising nearly lattice-matched semiconductors (e.g., ZnS/ZnMgS) on Si channels. Also presented is the fabrication of an electroluminescent (EL) device with embedded cladded ZnCdSe quantum dots. These ZnCdSe quantum dots were embedded between indium tin oxide (ITO) on glass and a top Schottky metal electrode deposited on a thin CsF barrier. These QDs, which were nucleated in a photo-assisted microwave plasma (PMP) metalorganic chemical vapor deposition (MOCVD) reactor, were grown between the source and drain regions on a p-type silicon substrate of the nonvolatile memory device. The composition of QD cladding, which relates to the value of y in Zn y Cd1- y Se, was engineered by the intensity of ultraviolet light, which controlled the incorporation of zinc in ZnCdSe. The QD quality is comparable to those deposited by other methods. Characteristics and modeling of the II-VI quantum dots as well as two diverse types of devices are presented in this paper.

  18. Non-volatile nano-floating gate memory with Pt-Fe{sub 2}O{sub 3} composite nanoparticles and indium gallium zinc oxide channel

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Quanli [Myongji University, Department of Nano Science and Engineering (Korea, Republic of); Lee, Seung Chang; Baek, Yoon-Jae [Myongji University, Department of Materials Science and Engineering (Korea, Republic of); Lee, Hyun Ho [Myongji University, Department of Chemical Engineering (Korea, Republic of); Kang, Chi Jung [Myongji University, Department of Nano Science and Engineering (Korea, Republic of); Kim, Hyun-Mi; Kim, Ki-Bum [Seoul National University, Department of Materials Science and Engineering (Korea, Republic of); Yoon, Tae-Sik, E-mail: tsyoon@mju.ac.kr [Myongji University, Department of Nano Science and Engineering (Korea, Republic of)

    2013-02-15

    Non-volatile nano-floating gate memory characteristics with colloidal Pt-Fe{sub 2}O{sub 3} composite nanoparticles with a mostly core-shell structure and indium gallium zinc oxide channel layer were investigated. The Pt-Fe{sub 2}O{sub 3} nanoparticles were chemically synthesized through the preferential oxidation of Fe and subsequent pileup of Pt into the core in the colloidal solution. The uniformly assembled nanoparticles' layer could be formed with a density of {approx}3 Multiplication-Sign 10{sup 11} cm{sup -2} by a solution-based dip-coating process. The Pt core ({approx}3 nm in diameter) and Fe{sub 2}O{sub 3}-shell ({approx}6 nm in thickness) played the roles of the charge storage node and tunneling barrier, respectively. The device exhibited the hysteresis in current-voltage measurement with a threshold voltage shift of {approx}4.76 V by gate voltage sweeping to +30 V. It also showed the threshold shift of {approx}0.66 V after pulse programming at +20 V for 1 s with retention > {approx}65 % after 10{sup 4} s. These results demonstrate the feasibility of using colloidal nanoparticles with core-shell structure as gate stacks of the charge storage node and tunneling dielectric for low-temperature and solution-based processed non-volatile memory devices.

  19. Novel Organic Phototransistor-Based Nonvolatile Memory Integrated with UV-Sensing/Green-Emissive Aggregation Enhanced Emission (AEE)-Active Aromatic Polyamide Electret Layer.

    Science.gov (United States)

    Cheng, Shun-Wen; Han, Ting; Huang, Teng-Yung; Chang Chien, Yu-Hsin; Liu, Cheng-Liang; Tang, Ben Zhong; Liou, Guey-Sheng

    2018-05-30

    A novel aggregation enhanced emission (AEE)-active polyamide TPA-CN-TPE with a high photoluminesence characteristic was successfully synthesized by the direct polymerization of 4-cyanotriphenyl diamine (TPA-CN) and tetraphenylethene (TPE)-containing dicarboxylic acid. The obtained luminescent polyamide plays a significant role as the polymer electret layer in organic field-effect transistors (OFETs)-type memory. The strong green emission of TPA-CN-TPE under ultraviolet (UV) irradiation can be directly absorbed by the pentacene channel, displaying a light-induced programming and voltage-driven erasing organic phototransistor-based nonvolatile memory. Memory window can be effectively manipulated between the programming and erasing states by applying UV light illumination and electrical field, respectively. The photoinduced memory behavior can be maintained for over 10 4 s between these two states with an on/off ratio of 10 4 , and the memory switching can be steadily operated for many cycles. With high photoresponsivity ( R) and photosensitivity ( S), this organic phototransistor integrated with AEE-active polyamide electret layer could serve as an excellent candidate for UV photodetectors in optical applications. For comparison, an AEE-inactive aromatic polyimide TPA-PIS electret with much weaker solid-state emission was also applied in the same OFETs device architecture, but this device did not show any UV-sensitive and UV-induced memory characteristics, which further confirmed the significance of the light-emitting capability of the electret layer.

  20. Nonvolatile memory thin film transistors using CdSe/ZnS quantum dot-poly(methyl methacrylate) composite layer formed by a two-step spin coating technique

    Science.gov (United States)

    Chen, Ying-Chih; Huang, Chun-Yuan; Yu, Hsin-Chieh; Su, Yan-Kuin

    2012-08-01

    The nonvolatile memory thin film transistors (TFTs) using a core/shell CdSe/ZnS quantum dot (QD)-poly(methyl methacrylate) (PMMA) composite layer as the floating gate have been demonstrated, with the device configuration of n+-Si gate/SiO2 insulator/QD-PMMA composite layer/pentacene channel/Au source-drain being proposed. To achieve the QD-PMMA composite layer, a two-step spin coating technique was used to successively deposit QD-PMMA composite and PMMA on the insulator. After the processes, the variation of crystal quality and surface morphology of the subsequent pentacene films characterized by x-ray diffraction spectra and atomic force microscopy was correlated to the two-step spin coating. The crystalline size of pentacene was improved from 147.9 to 165.2 Å, while the degree of structural disorder was decreased from 4.5% to 3.1% after the adoption of this technique. In pentacene-based TFTs, the improvement of the performance was also significant, besides the appearances of strong memory characteristics. The memory behaviors were attributed to the charge storage/discharge effect in QD-PMMA composite layer. Under the programming and erasing operations, programmable memory devices with the memory window (Δ Vth) = 23 V and long retention time were obtained.

  1. Fabrication and operation methods of a one-time programmable (OTP) nonvolatile memory (NVM) based on a metal-oxide-semiconductor structure

    International Nuclear Information System (INIS)

    Cho, Seongjae; Lee, Junghoon; Jung, Sunghun; Park, Sehwan; Park, Byunggook

    2011-01-01

    In this paper, a novel one-time programmable (OTP) nonvolatile memory (NVM) device and its array based on a metal-insulator-semiconductor (MIS) structure is proposed. The Iindividual memory device has a vertical channel of a silicon diode. Historically, OTP memories were widely used for read-only-memories (ROMs), in which the most basic system architecture model was to store central processing unit (CPU) instructions. By grafting the nanoscale fabrication technology and novel structuring onto the concept of the OTP memory, innovative high-density NVM appliances for mobile storage media may be possible. The program operation is performed by breaking down the thin oxide layer between the pn diode structure and the wordline (WL). The programmed state can be identified by an operation that reads the leakage currents through the broken oxide. Since the proposed OTP NVM is based on neither a transistor structure nor a charge storing mechanism, it is highly reliable and functional for realizing the ultra-large scale integration. The operation physics and the fabrication processes are also explained in detail.

  2. Piezoelectric control of magnetoelectric coupling driven non-volatile memory switching and self cooling effects in FE/FSMA multiferroic heterostructures

    Science.gov (United States)

    Singh, Kirandeep; Kaur, Davinder

    2017-02-01

    The manipulation of magnetic states and materials' spin degree-of-freedom via a control of an electric (E-) field has been recently pursued to develop magnetoelectric (ME) coupling-driven electronic data storage devices with high read/write endurance, fast dynamic response, and low energy dissipation. One major hurdle for this approach is to develop reliable materials which should be compatible with prevailing silicon (Si)-based complementary metal-oxide-semiconductor (CMOS) technology, simultaneously allowing small voltage for the tuning of magnetization switching. In this regard, multiferroic heterostructures where ferromagnetic (FM) and ferroelectric (FE) layers are alternatively grown on conventional Si substrates are promising as the piezoelectric control of magnetization switching is anticipated to be possible by an E-field. In this work, we study the ferromagnetic shape memory alloys based PbZr0.52Ti0.48O3/Ni50Mn35In15 (PZT/Ni-Mn-In) multiferroic heterostructures, and investigate their potential for CMOS compatible non-volatile magnetic data storage applications. We demonstrate the voltage-impulse controlled nonvolatile, reversible, and bistable magnetization switching at room temperature in Si-integrated PZT/Ni-Mn-In thin film multiferroic heterostructures. We also thoroughly unveil the various intriguing features in these materials, such as E-field tuned ME coupling and magnetocaloric effect, shape memory induced ferroelectric modulation, improved fatigue endurance as well as Refrigeration Capacity (RC). This comprehensive study suggests that these novel materials have a great potential for the development of unconventional nanoscale memory and refrigeration devices with self-cooling effect and enhanced refrigeration efficiency, thus providing a new venue for their applications.

  3. Multistate storage nonvolatile memory device based on ferroelectricity and resistive switching effects of SrBi2Ta2O9 films

    Science.gov (United States)

    Song, Zhiwei; Li, Gang; Xiong, Ying; Cheng, Chuanpin; Zhang, Wanli; Tang, Minghua; Li, Zheng; He, Jiangheng

    2018-05-01

    A memory device with a Pt/SrBi2Ta2O9(SBT)/Pt(111) structure was shown to have excellent combined ferroelectricity and resistive switching properties, leading to higher multistate storage memory capacity in contrast to ferroelectric memory devices. In this device, SBT polycrystalline thin films with significant (115) orientation were fabricated on Pt(111)/Ti/SiO2/Si(100) substrates using CVD (chemical vapor deposition) method. Measurement results of the electric properties exhibit reproducible and reliable ferroelectricity switching behavior and bipolar resistive switching effects (BRS) without an electroforming process. The ON/OFF ratio of the resistive switching was found to be about 103. Switching mechanisms for the low resistance state (LRS) and high resistance state (HRS) currents are likely attributed to the Ohmic and space charge-limited current (SCLC) behavior, respectively. Moreover, the ferroelectricity and resistive switching effects were found to be mutually independent, and the four logic states were obtained by controlling the periodic sweeping voltage. This work holds great promise for nonvolatile multistate memory devices with high capacity and low cost.

  4. Laser Nanosoldering of Golden and Magnetite Particles and its Possible Application in 3D Printing Devices and Four-Valued Non-Volatile Memories

    Directory of Open Access Journals (Sweden)

    Jaworski Jacek

    2015-12-01

    Full Text Available In recent years the 3D printing methods have been developing rapidly. This article presents researches about a new composite consisted of golden and magnetite nanoparticles which could be used for this technique. Preparation of golden nanoparticles by laser ablation and their soldering by laser green light irradiation proceeded in water environment. Magnetite was obtained on chemical way. During experiments it was tested a change of a size of nanoparticles during laser irradiation, surface plasmon resonance, zeta potential. The obtained golden - magnetite composite material was magnetic after laser irradiation. On the end there was considered the application it for 3D printing devices, water filters and four-valued non-volatile memories.

  5. A study of selenium nanoparticles as charge storage element for flexible semi-transparent memory devices

    Science.gov (United States)

    Alotaibi, Sattam; Nama Manjunatha, Krishna; Paul, Shashi

    2017-12-01

    Flexible Semi-Transparent electronic memory would be useful in coming years for integrated flexible transparent electronic devices. However, attaining such flexibility and semi-transparency leads to the boundaries in material composition. Thus, impeding processing speed and device performance. In this work, we present the use of inorganic stable selenium nanoparticles (Se-NPs) as a storage element and hydrogenated amorphous carbon (a-C:H) as an insulating layer in two terminal non-volatile physically flexible and semi-transparent capacitive memory devices (2T-NMDs). Furthermore, a-C:H films can be deposited at very low temperature (industrial technique called Plasma Enhanced Chemical Vapour Deposition (PECVD) which is available in many existing fabrication labs. Self-assembled Se-NPs has several unique features including deposition at room temperature by simple vacuum thermal evaporation process without the need for further optimisation. This facilitates the fabrication of memory on a flexible substrate. Moreover, the memory behaviour of the Se-NPs was found to be more distinct than those of the semiconductor and metal nanostructures due to higher work function compared to the commonly used semiconductor and metal species. The memory behaviour was observed from the hysteresis of current-voltage (I-V) measurements while the two distinguishable electrical conductivity states (;0; and "1") were studied by current-time (I-t) measurements.

  6. Impact of process parameters on the structural and electrical properties of metal/PZT/Al2O3/silicon gate stack for non-volatile memory applications

    Science.gov (United States)

    Singh, Prashant; Jha, Rajesh Kumar; Singh, Rajat Kumar; Singh, B. R.

    2018-02-01

    In this paper, we present the structural and electrical properties of the Al2O3 buffer layer on non-volatile memory behavior using Metal/PZT/Al2O3/Silicon structures. Metal/PZT/Silicon and Metal/Al2O3/Silicon structures were also fabricated and characterized to obtain capacitance and leakage current parameters. Lead zirconate titanate (PZT::35:65) and Al2O3 films were deposited by sputtering on the silicon substrate. Memory window, PUND, endurance, breakdown voltage, effective charges, flat-band voltage and leakage current density parameters were measured and the effects of process parameters on the structural and electrical characteristics were investigated. X-ray data show dominant (110) tetragonal phase of the PZT film, which crystallizes at 500 °C. The sputtered Al2O3 film annealed at different temperatures show dominant (312) orientation and amorphous nature at 425 °C. Multiple angle laser ellipsometric analysis reveals the temperature dependence of PZT film refractive index and extinction coefficient. Electrical characterization shows the maximum memory window of 3.9 V and breakdown voltage of 25 V for the Metal/Ferroelectric/Silicon (MFeS) structures annealed at 500 °C. With 10 nm Al2O3 layer in the Metal/Ferroelectric/Insulator/Silicon (MFeIS) structure, the memory window and breakdown voltage was improved to 7.21 and 35 V, respectively. Such structures show high endurance with no significant reduction polarization charge for upto 2.2 × 109 iteration cycles.

  7. Low-voltage operating flexible ferroelectric organic field-effect transistor nonvolatile memory with a vertical phase separation P(VDF-TrFE-CTFE)/PS dielectric

    Science.gov (United States)

    Xu, Meili; Xiang, Lanyi; Xu, Ting; Wang, Wei; Xie, Wenfa; Zhou, Dayu

    2017-10-01

    Future flexible electronic systems require memory devices combining low-power operation and mechanical bendability. However, high programming/erasing voltages, which are universally needed to switch the storage states in previously reported ferroelectric organic field-effect transistor (Fe-OFET) nonvolatile memories (NVMs), severely prevent their practical applications. In this work, we develop a route to achieve a low-voltage operating flexible Fe-OFET NVM. Utilizing vertical phase separation, an ultrathin self-organized poly(styrene) (PS) buffering layer covers the surface of the ferroelectric polymer layer by one-step spin-coating from their blending solution. The ferroelectric polymer with a low coercive field contributes to low-voltage operation in the Fe-OFET NVM. The polymer PS contributes to the improvement of mobility, attributing to screening the charge scattering and decreasing the surface roughness. As a result, a high performance flexible Fe-OFET NVM is achieved at the low P/E voltages of ±10 V, with a mobility larger than 0.2 cm2 V-1 s-1, a reliable P/E endurance over 150 cycles, stable data storage retention capability over 104 s, and excellent mechanical bending durability with a slight performance degradation after 1000 repetitive tensile bending cycles at a curvature radius of 5.5 mm.

  8. Electrical bistabilities and memory mechanisms of nonvolatile organic bistable devices based on exfoliated muscovite-type mica nanoparticle/poly(methylmethacrylate) nanocomposites

    Science.gov (United States)

    Lim, Won Gyu; Lee, Dea Uk; Na, Han Gil; Kim, Hyoun Woo; Kim, Tae Whan

    2018-02-01

    Organic bistable devices (OBDs) with exfoliated mica nanoparticles (NPs) embedded into an insulating poly(methylmethacrylate) (PMMA) layer were fabricated by using a spin-coating method. Current-voltage (I-V) curves for the Al/PMMA/exfoliated mica NP/PMMA/indium-tin-oxide/glass devices at 300 K showed a clockwise current hysteresis behavior due to the existence of the exfoliated muscovite-type mica NPs, which is an essential feature for bistable devices. Write-read-erase-read data showed that the OBDs had rewritable nonvolatile memories and an endurance number of ON/OFF switching for the OBDs of 102 cycles. An ON/OFF ratio of 1 × 103 was maintained for retention times larger than 1 × 104 s. The memory mechanisms of the fabricated OBDs were described by using the trapping and the tunneling processes within a PMMA active layer containing exfoliated muscovite-type mica NPs on the basis of the energy band diagram and the I-V curves.

  9. Nonvolatile ferroelectric memory based on PbTiO3 gated single-layer MoS2 field-effect transistor

    Science.gov (United States)

    Shin, Hyun Wook; Son, Jong Yeog

    2018-01-01

    We fabricated ferroelectric non-volatile random access memory (FeRAM) based on a field effect transistor (FET) consisting of a monolayer MoS2 channel and a ferroelectric PbTiO3 (PTO) thin film of gate insulator. An epitaxial PTO thin film was deposited on a Nb-doped SrTiO3 (Nb:STO) substrate via pulsed laser deposition. A monolayer MoS2 sheet was exfoliated from a bulk crystal and transferred to the surface of the PTO/Nb:STO. Structural and surface properties of the PTO thin film were characterized by X-ray diffraction and atomic force microscopy, respectively. Raman spectroscopy analysis was performed to identify the single-layer MoS2 sheet on the PTO/Nb:STO. We obtained mobility value (327 cm2/V·s) of the MoS2 channel at room temperature. The MoS2-PTO FeRAM FET showed a wide memory window with 17 kΩ of resistance variation which was attributed to high remnant polarization of the epitaxially grown PTO thin film. According to the fatigue resistance test for the FeRAM FET, however, the resistance states gradually varied during the switching cycles of 109. [Figure not available: see fulltext.

  10. Memristors: Memory elements in potato tubers.

    Science.gov (United States)

    Volkov, Alexander G; Nyasani, Eunice K; Blockmon, Avery L; Volkova, Maya I

    2015-01-01

    A memristor is a nonlinear element because its current-voltage characteristic is similar to that of a Lissajous pattern for nonlinear systems. This element was postulated recently and researchers are looking for it in different biosystems. We investigated electrical circuitry of red Irish potato tubers (Solanum tuberosum L.). The goal was to discover if potato tubers might have a new electrical component - a resistor with memory. The analysis was based on a cyclic current-voltage characteristic where the resistor with memory should manifest itself. We found that the electrostimulation by bipolar sinusoidal or triangle periodic waves induces electrical responses in the potato tubers with fingerprints of memristors. Tetraethylammonium chloride, an inhibitor of voltage gated K(+) channels, transforms a memristor to a resistor in potato tubers. Our results demonstrate that a voltage gated K(+) channel in the excitable tissue of potato tubers has properties of a memristor. Uncoupler carbonylcyanide-4-trifluoromethoxy-phenyl hydrazone decreases the amplitude of electrical responses at low and high frequencies of bipolar periodic sinusoidal or triangle electrostimulating waves. The discovery of memristors in plants creates a new direction in the understanding of electrical phenomena in plants.

  11. Nonvolatile resistive switching in Pt/laALO3/srTiO3 heterostructures

    KAUST Repository

    Wu, S.; Luo, X.; Turner, S.; Peng, H.; Lin, W.; Ding, J.; David, A.; Wang, B.; Van, Tendeloo, G.; Wang, J.; Wu, Tao

    2013-01-01

    Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures

  12. Magnetic Random Access Memory based non-volatile asynchronous Muller cell for ultra-low power autonomous applications

    Science.gov (United States)

    Di Pendina, G.; Zianbetov, E.; Beigne, E.

    2015-05-01

    Micro and nano electronic integrated circuit domain is today mainly driven by the advent of the Internet of Things for which the constraints are strong, especially in terms of power consumption and autonomy, not only during the computing phases but also during the standby or idle phases. In such ultra-low power applications, the circuit has to meet new constraints mainly linked to its changing energetic environment: long idle phases, automatic wake up, data back-up when the circuit is sporadically turned off, and ultra-low voltage power supply operation. Such circuits have to be completely autonomous regarding their unstable environment, while remaining in an optimum energetic configuration. Therefore, we propose in this paper the first MRAM-based non-volatile asynchronous Muller cell. This cell has been simulated and characterized in a very advanced 28 nm CMOS fully depleted silicon-on-insulator technology, presenting good power performance results due to an extremely efficient body biasing control together with ultra-wide supply voltage range from 160 mV up to 920 mV. The leakage current can be reduced to 154 pA thanks to reverse body biasing. We also propose an efficient standard CMOS bulk version of this cell in order to be compatible with different fabrication processes.

  13. Magnetic Random Access Memory based non-volatile asynchronous Muller cell for ultra-low power autonomous applications

    Energy Technology Data Exchange (ETDEWEB)

    Di Pendina, G., E-mail: gregory.dipendina@cea.fr, E-mail: eldar.zianbetov@cea.fr, E-mail: edith.beigne@cea.fr; Zianbetov, E., E-mail: gregory.dipendina@cea.fr, E-mail: eldar.zianbetov@cea.fr, E-mail: edith.beigne@cea.fr [Univ. Grenoble Alpes, INAC-SPINTEC, F-38000 Grenoble (France); CNRS, SPINTEC, F-38000 Grenoble (France); CEA, INAC-SPINTEC, F-38000 Grenoble (France); Beigne, E., E-mail: gregory.dipendina@cea.fr, E-mail: eldar.zianbetov@cea.fr, E-mail: edith.beigne@cea.fr [Univ. Grenoble Alpes, CEA, LETI, F-38000 Grenoble (France)

    2015-05-07

    Micro and nano electronic integrated circuit domain is today mainly driven by the advent of the Internet of Things for which the constraints are strong, especially in terms of power consumption and autonomy, not only during the computing phases but also during the standby or idle phases. In such ultra-low power applications, the circuit has to meet new constraints mainly linked to its changing energetic environment: long idle phases, automatic wake up, data back-up when the circuit is sporadically turned off, and ultra-low voltage power supply operation. Such circuits have to be completely autonomous regarding their unstable environment, while remaining in an optimum energetic configuration. Therefore, we propose in this paper the first MRAM-based non-volatile asynchronous Muller cell. This cell has been simulated and characterized in a very advanced 28 nm CMOS fully depleted silicon-on-insulator technology, presenting good power performance results due to an extremely efficient body biasing control together with ultra-wide supply voltage range from 160 mV up to 920 mV. The leakage current can be reduced to 154 pA thanks to reverse body biasing. We also propose an efficient standard CMOS bulk version of this cell in order to be compatible with different fabrication processes.

  14. Magnetic Random Access Memory based non-volatile asynchronous Muller cell for ultra-low power autonomous applications

    International Nuclear Information System (INIS)

    Di Pendina, G.; Zianbetov, E.; Beigne, E.

    2015-01-01

    Micro and nano electronic integrated circuit domain is today mainly driven by the advent of the Internet of Things for which the constraints are strong, especially in terms of power consumption and autonomy, not only during the computing phases but also during the standby or idle phases. In such ultra-low power applications, the circuit has to meet new constraints mainly linked to its changing energetic environment: long idle phases, automatic wake up, data back-up when the circuit is sporadically turned off, and ultra-low voltage power supply operation. Such circuits have to be completely autonomous regarding their unstable environment, while remaining in an optimum energetic configuration. Therefore, we propose in this paper the first MRAM-based non-volatile asynchronous Muller cell. This cell has been simulated and characterized in a very advanced 28 nm CMOS fully depleted silicon-on-insulator technology, presenting good power performance results due to an extremely efficient body biasing control together with ultra-wide supply voltage range from 160 mV up to 920 mV. The leakage current can be reduced to 154 pA thanks to reverse body biasing. We also propose an efficient standard CMOS bulk version of this cell in order to be compatible with different fabrication processes

  15. Multistate nonvolatile straintronics controlled by a lateral electric field

    International Nuclear Information System (INIS)

    Iurchuk, V; Doudin, B; Kundys, B

    2014-01-01

    We present a multifunctional and multistate permanent memory device based on lateral electric field control of a strained surface. Sub-coercive electrical writing of a remnant strain of a PZT substrate imprints stable and rewritable resistance changes on a CoFe overlayer. A proof-of-principle device, with the simplest resistance strain gage design, is shown as a memory cell exhibiting 17-memory states of high reproducibility and reliability for nonvolatile operations. Magnetoresistance of the film also depends on the cell state, and indicates a rewritable change of magnetic properties persisting in the remnant strain of the substrate. This makes it possible to combine strain, magnetic and resistive functionalities in a single memory element, and suggests that sub-coercive stress studies are of interest for straintronics applications. (fast track communication)

  16. Multistate nonvolatile straintronics controlled by a lateral electric field.

    Science.gov (United States)

    Iurchuk, V; Doudin, B; Kundys, B

    2014-07-23

    We present a multifunctional and multistate permanent memory device based on lateral electric field control of a strained surface. Sub-coercive electrical writing of a remnant strain of a PZT substrate imprints stable and rewritable resistance changes on a CoFe overlayer. A proof-of-principle device, with the simplest resistance strain gage design, is shown as a memory cell exhibiting 17-memory states of high reproducibility and reliability for nonvolatile operations. Magnetoresistance of the film also depends on the cell state, and indicates a rewritable change of magnetic properties persisting in the remnant strain of the substrate. This makes it possible to combine strain, magnetic and resistive functionalities in a single memory element, and suggests that sub-coercive stress studies are of interest for straintronics applications.

  17. Investigating Phase Transform Behavior in Indium Selenide Based RAM and Its Validation as a Memory Element

    Directory of Open Access Journals (Sweden)

    Swapnil Sourav

    2016-01-01

    Full Text Available Phase transform properties of Indium Selenide (In2Se3 based Random Access Memory (RAM have been explored in this paper. Phase change random access memory (PCRAM is an attractive solid-state nonvolatile memory that possesses potential to meet various current technology demands of memory design. Already reported PCRAM models are mainly based upon Germanium-Antimony-Tellurium (Ge2Sb2Te5 or GST materials as their prime constituents. However, PCRAM using GST material lacks some important memory attributes required for memory elements such as larger resistance margin between the highly resistive amorphous and highly conductive crystalline states in phase change materials. This paper investigates various electrical and compositional properties of the Indium Selenide (In2Se3 material and also draws comparison with its counterpart mainly focusing on phase transform properties. To achieve this goal, a SPICE model of In2Se3 based PCRAM model has been reported in this work. The reported model has been also validated to act as a memory cell by associating it with a read/write circuit proposed in this work. Simulation results demonstrate impressive retentivity and low power consumption by requiring a set pulse of 208 μA for a duration of 100 μs to set the PCRAM in crystalline state. Similarly, a reset pulse of 11.7 μA for a duration of 20 ns can set the PCRAM in amorphous state. Modeling of In2Se3 based PCRAM has been done in Verilog-A and simulation results have been extensively verified using SPICE simulator.

  18. Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications

    Energy Technology Data Exchange (ETDEWEB)

    Normand, P. E-mail: p.normand@imel.demokritos.gr; Kapetanakis, E.; Dimitrakis, P.; Skarlatos, D.; Beltsios, K.; Tsoukalas, D.; Bonafos, C.; Ben Assayag, G.; Cherkashin, N.; Claverie, A.; Berg, J.A. van den; Soncini, V.; Agarwal, A.; Ameen, M.; Perego, M.; Fanciulli, M

    2004-02-01

    An overview of recent developments regarding the fabrication and structure of thin silicon dioxide films with embedded nanocrystals through ultra-low-energy ion-beam-synthesis (ULE-IBS) is presented. Advances in fabrication, increased understanding of structure formation processes and ways to control them allow for the fabrication of reproducible and attractive silicon-nanocrystal memory devices for a wide-range of memory applications as herein demonstrated in the case of low-voltage EEPROM-like applications.

  19. Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications

    International Nuclear Information System (INIS)

    Normand, P.; Kapetanakis, E.; Dimitrakis, P.; Skarlatos, D.; Beltsios, K.; Tsoukalas, D.; Bonafos, C.; Ben Assayag, G.; Cherkashin, N.; Claverie, A.; Berg, J.A. van den; Soncini, V.; Agarwal, A.; Ameen, M.; Perego, M.; Fanciulli, M.

    2004-01-01

    An overview of recent developments regarding the fabrication and structure of thin silicon dioxide films with embedded nanocrystals through ultra-low-energy ion-beam-synthesis (ULE-IBS) is presented. Advances in fabrication, increased understanding of structure formation processes and ways to control them allow for the fabrication of reproducible and attractive silicon-nanocrystal memory devices for a wide-range of memory applications as herein demonstrated in the case of low-voltage EEPROM-like applications

  20. Fabrication of InGaZnO Nonvolatile Memory Devices at Low Temperature of 150 degrees C for Applications in Flexible Memory Displays and Transparency Coating on Plastic Substrates.

    Science.gov (United States)

    Hanh, Nguyen Hong; Jang, Kyungsoo; Yi, Junsin

    2016-05-01

    We directly deposited amorphous InGaZnO (a-IGZO) nonvolatile memory (NVM) devices with oxynitride-oxide-dioxide (OOO) stack structures on plastic substrate by a DC pulsed magnetron sputtering and inductively coupled plasma chemical vapor deposition (ICPCVD) system, using a low-temperature of 150 degrees C. The fabricated bottom gate a-IGZO NVM devices have a wide memory window with a low operating voltage during programming and erasing, due to an effective control of the gate dielectrics. In addition, after ten years, the memory device retains a memory window of over 73%, with a programming duration of only 1 ms. Moreover, the a-IGZO films show high optical transmittance of over 85%, and good uniformity with a root mean square (RMS) roughness of 0.26 nm. This film is a promising candidate to achieve flexible displays and transparency on plastic substrates because of the possibility of low-temperature deposition, and the high transparent properties of a-IGZO films. These results demonstrate that the a-IGZO NVM devices obtained at low-temperature have a suitable programming and erasing efficiency for data storage under low-voltage conditions, in combination with excellent charge retention characteristics, and thus show great potential application in flexible memory displays.

  1. Flexible and twistable non-volatile memory cell array with all-organic one diode-one resistor architecture.

    Science.gov (United States)

    Ji, Yongsung; Zeigler, David F; Lee, Dong Su; Choi, Hyejung; Jen, Alex K-Y; Ko, Heung Cho; Kim, Tae-Wook

    2013-01-01

    Flexible organic memory devices are one of the integral components for future flexible organic electronics. However, high-density all-organic memory cell arrays on malleable substrates without cross-talk have not been demonstrated because of difficulties in their fabrication and relatively poor performances to date. Here we demonstrate the first flexible all-organic 64-bit memory cell array possessing one diode-one resistor architectures. Our all-organic one diode-one resistor cell exhibits excellent rewritable switching characteristics, even during and after harsh physical stresses. The write-read-erase-read output sequence of the cells perfectly correspond to the external pulse signal regardless of substrate deformation. The one diode-one resistor cell array is clearly addressed at the specified cells and encoded letters based on the standard ASCII character code. Our study on integrated organic memory cell arrays suggests that the all-organic one diode-one resistor cell architecture is suitable for high-density flexible organic memory applications in the future.

  2. Capacitance characteristics of metal-oxide-semiconductor capacitors with a single layer of embedded nickel nanoparticles for the application of nonvolatile memory

    International Nuclear Information System (INIS)

    Wei, Li; Ling, Xu; Wei-Ming, Zhao; Hong-Lin, Ding; Zhong-Yuan, Ma; Jun, Xu; Kun-Ji, Chen

    2010-01-01

    This paper reports that metal-oxide-semiconductor (MOS) capacitors with a single layer of Ni nanoparticles were successfully fabricated by using electron-beam evaporation and rapid thermal annealing for application to nonvolatile memory. Experimental scanning electron microscopy images showed that Ni nanoparticles of about 5 nm in diameter were clearly embedded in the SiO 2 layer on p-type Si (100). Capacitance–voltage measurements of the MOS capacitor show large flat-band voltage shifts of 1.8 V, which indicate the presence of charge storage in the nickel nanoparticles. In addition, the charge-retention characteristics of MOS capacitors with Ni nanoparticles were investigated by using capacitance–time measurements. The results showed that there was a decay of the capacitance embedded with Ni nanoparticles for an electron charge after 10 4 s. But only a slight decay of the capacitance originating from hole charging was observed. The present results indicate that this technique is promising for the efficient formation or insertion of metal nanoparticles inside MOS structures. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  3. Different importance of the volatile and non-volatile fractions of an olfactory signature for individual social recognition in rats versus mice and short-term versus long-term memory.

    Science.gov (United States)

    Noack, Julia; Richter, Karin; Laube, Gregor; Haghgoo, Hojjat Allah; Veh, Rüdiger W; Engelmann, Mario

    2010-11-01

    When tested in the olfactory cued social recognition/discrimination test, rats and mice differ in their retention of a recognition memory for a previously encountered conspecific juvenile: Rats are able to recognize a given juvenile for approximately 45 min only whereas mice show not only short-term, but also long-term recognition memory (≥ 24 h). Here we modified the social recognition/social discrimination procedure to investigate the neurobiological mechanism(s) underlying the species differences. We presented a conspecific juvenile repeatedly to the experimental subjects and monitored the investigation duration as a measure for recognition. Presentation of only the volatile fraction of the juvenile olfactory signature was sufficient for both short- and long-term recognition in mice but not rats. Applying additional volatile, mono-molecular odours to the "to be recognized" juveniles failed to affect short-term memory in both species, but interfered with long-term recognition in mice. Finally immunocytochemical analysis of c-Fos as a marker for cellular activation, revealed that juvenile exposure stimulated areas involved in the processing of olfactory signals in both the main and the accessory olfactory bulb in mice. In rats, we measured an increased c-Fos synthesis almost exclusively in cells of the accessory olfactory bulb. Our data suggest that the species difference in the retention of social recognition memory is based on differences in the processing of the volatile versus non-volatile fraction of the individuals' olfactory signature. The non-volatile fraction is sufficient for retaining a short-term social memory only. Long-term social memory - as observed in mice - requires a processing of both the volatile and non-volatile fractions of the olfactory signature. Copyright © 2010 Elsevier Inc. All rights reserved.

  4. Surface directed phase separation of semiconductor ferroelectric polymer blends and their use in non-volatile memories

    NARCIS (Netherlands)

    Breemen, A.J.J.M. van; Zaba, T.; Khikhlovskyi, V.; Michels, J.; Janssen, R.; Kemerink, M.; Gelinck, G.

    2015-01-01

    The polymer phase separation of P(VDF-TrFE):F8BT blends is studied in detail. Its morphology is key to the operation and performance of memory diodes. In this study, it is demonstrated that it is possible to direct the semiconducting domains of a phase-separating mixture of P(VDF-TrFE) and F8BT in a

  5. Atomic layer-deposited Al–HfO{sub 2}/SiO{sub 2} bi-layers towards 3D charge trapping non-volatile memory

    Energy Technology Data Exchange (ETDEWEB)

    Congedo, Gabriele, E-mail: gabriele.congedo@mdm.imm.cnr.it; Wiemer, Claudia; Lamperti, Alessio; Cianci, Elena; Molle, Alessandro; Volpe, Flavio G.; Spiga, Sabina, E-mail: sabina.spiga@mdm.imm.cnr

    2013-04-30

    A metal/oxide/high-κ dielectric/oxide/silicon (MOHOS) planar charge trapping memory capacitor including SiO{sub 2} as tunnel oxide, Al–HfO{sub 2} as charge trapping layer, SiO{sub 2} as blocking oxide and TaN metal gate was fabricated and characterized as test vehicle in the view of integration into 3D cells. The thin charge trapping layer and blocking oxide were grown by atomic layer deposition, the technique of choice for the implementation of these stacks into 3D structures. The oxide stack shows a good thermal stability for annealing temperature of 900 °C in N{sub 2}, as required for standard complementary metal–oxide–semiconductor processes. MOHOS capacitors can be efficiently programmed and erased under the applied voltages of ± 20 V to ± 12 V. When compared to a benchmark structure including thin Si{sub 3}N{sub 4} as charge trapping layer, the MOHOS cell shows comparable program characteristics, with the further advantage of the equivalent oxide thickness scalability due to the high dielectric constant (κ) value of 32, and an excellent retention even for strong testing conditions. Our results proved that high-κ based oxide structures grown by atomic layer deposition can be of interest for the integration into three dimensionally stacked charge trapping devices. - Highlights: ► Charge trapping device with Al–HfO{sub 2} storage layer is fabricated and characterized. ► Al–HfO{sub 2} and SiO{sub 2} blocking oxides are deposited by atomic layer deposition. ► The oxide stack shows a good thermal stability after annealing at 900 °C. ► The device can be efficiently programmed/erased and retention is excellent. ► The oxide stack could be used for 3D-stacked Flash non-volatile memories.

  6. Volatile and non-volatile elements in grain-size separated samples of Apollo 17 lunar soils

    International Nuclear Information System (INIS)

    Giovanoli, R.; Gunten, H.R. von; Kraehenbuehl, U.; Meyer, G.; Wegmueller, F.; Gruetter, A.; Wyttenbach, A.

    1977-01-01

    Three samples of Apollo 17 lunar soils (75081, 72501 and 72461) were separated into 9 grain-size fractions between 540 and 1 μm mean diameter. In order to detect mineral fractionations caused during the separation procedures major elements were determined by instrumental neutron activation analyses performed on small aliquots of the separated samples. Twenty elements were measured in each size fraction using instrumental and radiochemical neutron activation techniques. The concentration of the main elements in sample 75081 does not change with the grain-size. Exceptions are Fe and Ti which decrease slightly and Al which increases slightly with the decrease in the grain-size. These changes in the composition in main elements suggest a decrease in Ilmenite and an increase in Anorthite with decreasing grain-size. However, it can be concluded that the mineral composition of the fractions changes less than a factor of 2. Samples 72501 and 72461 are not yet analyzed for the main elements. (Auth.)

  7. Defect states and charge trapping characteristics of HfO2 films for high performance nonvolatile memory applications

    International Nuclear Information System (INIS)

    Zhang, Y.; Shao, Y. Y.; Lu, X. B.; Zeng, M.; Zhang, Z.; Gao, X. S.; Zhang, X. J.; Liu, J.-M.; Dai, J. Y.

    2014-01-01

    In this work, we present significant charge trapping memory effects of the metal-hafnium oxide-SiO 2 -Si (MHOS) structure. The devices based on 800 °C annealed HfO 2 film exhibit a large memory window of ∼5.1 V under ±10 V sweeping voltages and excellent charge retention properties with only small charge loss of ∼2.6% after more than 10 4  s retention. The outstanding memory characteristics are attributed to the high density of deep defect states in HfO 2 films. We investigated the defect states in the HfO 2 films by photoluminescence and photoluminescence excitation measurements and found that the defect states distributed in deep energy levels ranging from 1.1 eV to 2.9 eV below the conduction band. Our work provides further insights for the charge trapping mechanisms of the HfO 2 based MHOS devices.

  8. Formation of the distributed NiSiGe nanocrystals nonvolatile memory formed by rapidly annealing in N2 and O2 ambient

    International Nuclear Information System (INIS)

    Hu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Chiang, Cheng-Neng; Lin, Chao-Cheng; Chen, Min-Chen; Chang, Chun-Yen; Sze, Simon M.; Tseng, Tseung-Yuen

    2010-01-01

    In this work, electrical characteristics of the Ge-incorporated Nickel silicide (NiSiGe) nanocrystals memory device formed by the rapidly thermal annealing in N 2 and O 2 ambient have been studied. The trapping layer was deposited by co-sputtering the NiSi 2 and Ge, simultaneously. Transmission electron microscope results indicate that the NiSiGe nanocrystals were formed obviously in both the samples. The memory devices show obvious charge-storage ability under capacitance-voltage measurement. However, it is found that the NiSiGe nanocrystals device formed by annealing in N 2 ambient has smaller memory window and better retention characteristics than in O 2 ambient. Then, related material analyses were used to confirm that the oxidized Ge elements affect the charge-storage sites and the electrical performance of the NCs memory.

  9. Pulsed ion-beam assisted deposition of Ge nanocrystals on SiO2 for non-volatile memory device

    International Nuclear Information System (INIS)

    Stepina, N.P.; Dvurechenskii, A.V.; Armbrister, V.A.; Kirienko, V.V.; Novikov, P.L.; Kesler, V.G.; Gutakovskii, A.K.; Smagina, Z.V.; Spesivtzev, E.V.

    2008-01-01

    A floating gate memory structure, utilizing Ge nanocrystals (NCs) deposited on tunnel SiO 2 , have been fabricated using pulsed low energy ion-beam induced molecular-beam deposition (MBD) in ultra-high vacuum. The ion-beam action is shown to stimulate the nucleation of Ge NCs when being applied after thin Ge layer deposition. Growth conditions for independent change of NCs size and array density were established allowing to optimize the structure parameters required for memory device. Activation energy E = 0.25 eV was determined from the temperature dependence of NCs array density. Monte Carlo simulation has shown that the process, determining NCs array density, is the surface diffusion. Embedding of the crystalline Ge dots into silicon oxide was carried out by selective oxidation of Si(100)/SiO 2 /Ge(NCs)/poly-Si structure. MOS-capacitor obtained after oxidation showed a hysteresis in its C-V curves attributed to charge retention in the Ge dots

  10. On-chip photonic memory elements employing phase-change materials.

    Science.gov (United States)

    Rios, Carlos; Hosseini, Peiman; Wright, C David; Bhaskaran, Harish; Pernice, Wolfram H P

    2014-03-05

    Phase-change materials integrated into nanophotonic circuits provide a flexible way to realize tunable optical components. Relying on the enormous refractive-index contrast between the amorphous and crystalline states, such materials are promising candidates for on-chip photonic memories. Nonvolatile memory operation employing arrays of microring resonators is demonstrated as a route toward all-photonic chipscale information processing. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Evaluation of Recent Technologies of Nonvolatile RAM

    Science.gov (United States)

    Nuns, Thierry; Duzellier, Sophie; Bertrand, Jean; Hubert, Guillaume; Pouget, Vincent; Darracq, FrÉdÉric; David, Jean-Pierre; Soonckindt, Sabine

    2008-08-01

    Two types of recent nonvolatile random access memories (NVRAM) were evaluated for radiation effects: total dose and single event upset and latch-up under heavy ions and protons. Complementary irradiation with a laser beam provides information on sensitive areas of the devices.

  12. Game elements improve performance in a working memory training task

    Directory of Open Access Journals (Sweden)

    Manuel Ninaus

    2015-02-01

    Full Text Available The utilization of game elements in a non-game context is currently used in a vast range of different domains. However, research on game elements’ effects in cognitive tasks is still sparse. Thus, in this study we implemented three game elements, namely, progress bar, level indicator, and a thematic setting, in a working memory training task. We evaluated the impact of game elements on user performance and perceived state of flow when compared to a conventional version of the task. Participants interacting with game elements showed higher scores in the working memory training task than participants from a control group who completed the working memory training task without the game elements. Moreover, game elements facilitated the individuals’ performance closer to their maximum working memory capacity. Finally, the perceived flow did not differ between the two groups, which indicates that game elements can induce better performance without changing the perception of being “in the zone”, that is without an increase in anxiety or boredom. This empirical study indicates that certain game elements can improve the performance and efficiency in a working memory task by increasing users’ ability and willingness to train at their optimal performance level. 

  13. Oxide Structure Dependence of SiO2/SiOx/3C-SiC/n-Type Si Nonvolatile Resistive Memory on Memory Operation Characteristics

    Science.gov (United States)

    Yamaguchi, Yuichiro; Shouji, Masatsugu; Suda, Yoshiyuki

    2012-11-01

    We have investigated the dependence of the oxide layer structure of our previously proposed metal/SiO2/SiOx/3C-SiC/n-Si/metal metal-insulator-semiconductor (MIS) resistive memory device on the memory operation characteristics. The current-voltage (I-V) measurement and X-ray photoemission spectroscopy results suggest that SiOx defect states mainly caused by the oxidation of 3C-SiC at temperatures below 1000 °C are related to the hysteresis memory behavior in the I-V curve. By restricting the SiOx interface region, the number of switching cycles and the on/off current ratio are more enhanced. Compared with a memory device formed by one-step or two-step oxidation of 3C-SiC, a memory device formed by one-step oxidation of Si/3C-SiC exhibits a more restrictive SiOx interface with a more definitive SiO2 layer and higher memory performances for both the endurance switching cycle and on/off current ratio.

  14. Effect of ZnO channel thickness on the device behaviour of nonvolatile memory thin film transistors with double-layered gate insulators of Al2O3 and ferroelectric polymer

    International Nuclear Information System (INIS)

    Yoon, Sung-Min; Yang, Shin-Hyuk; Ko Park, Sang-Hee; Jung, Soon-Won; Cho, Doo-Hee; Byun, Chun-Won; Kang, Seung-Youl; Hwang, Chi-Sun; Yu, Byoung-Gon

    2009-01-01

    Poly(vinylidene fluoride trifluoroethylene) and ZnO were employed for nonvolatile memory thin film transistors as ferroelectric gate insulator and oxide semiconducting channel layers, respectively. It was proposed that the thickness of the ZnO layer be carefully controlled for realizing the lower programming voltage, because the serially connected capacitor by the formation of a fully depleted ZnO channel had a critical effect on the off programming voltage. The fabricated memory transistor with Al/P(VDF-TrFE) (80 nm)/Al 2 O 3 (4 nm)/ZnO (5 nm) exhibits encouraging behaviour such as a memory window of 3.8 V at the gate voltage of -10 to 12 V, and 10 7 on/off ratio, and a gate leakage current of 10 -11 A.

  15. Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications

    International Nuclear Information System (INIS)

    Lee, Jaesang; Kim, Hyungchul; Park, Taeyong; Ko, Youngbin; Ryu, Jaehun; Jeon, Heeyoung; Park, Jingyu; Jeon, Hyeongtag

    2012-01-01

    Remote plasma atomic layer deposited (RPALD) Al 2 O 3 films were investigated to apply as tunnel and blocking layers in the metal-oxide-semiconductor capacitor memory utilizing Au nanocrystals (NCs) for nonvolatile memory applications. The interface stability of an Al 2 O 3 film deposited by RPALD was studied to observe the effects of remote plasma on the interface. The interface formed during RPALD process has high oxidation states such as Si +3 and Si +4 , indicating that RPALD process can grow more stable interface which has a small amount of fixed oxide trap charge. The significant memory characteristics were also observed in this memory device through the electrical measurement. The memory device exhibited a relatively large memory window of 5.6 V under a 10/-10 V program/erase voltage and also showed the relatively fast programming/erasing speed and a competitive retention characteristic after 10 4 s. These results indicate that Al 2 O 3 films deposited via RPALD can be applied as the tunnel and blocking oxides for next-generation flash memory devices.

  16. Game elements improve performance in a working memory training task

    OpenAIRE

    Manuel Ninaus; Gonçalo Pereira; René Stefitz; Rui Prada; Ana Paiva; Christa Neuper; Guilherme Wood

    2015-01-01

    The utilization of game elements in a non-game context is currently used in a vast range of different domains. However, research on game elements’ effects in cognitive tasks is still sparse. Thus, in this study we implemented three game elements, namely, progress bar, level indicator, and a thematic setting, in a working memory training task. We evaluated the impact of game elements on user performance and perceived state of flow when compared to a conventional version of the task. Participan...

  17. A 600-µW ultra-low-power associative processor for image pattern recognition employing magnetic tunnel junction-based nonvolatile memories with autonomic intelligent power-gating scheme

    Science.gov (United States)

    Ma, Yitao; Miura, Sadahiko; Honjo, Hiroaki; Ikeda, Shoji; Hanyu, Takahiro; Ohno, Hideo; Endoh, Tetsuo

    2016-04-01

    A novel associative processor using magnetic tunnel junction (MTJ)-based nonvolatile memories has been proposed and fabricated under a 90 nm CMOS/70 nm perpendicular-MTJ (p-MTJ) hybrid process for achieving the exceptionally low-power performance of image pattern recognition. A four-transistor 2-MTJ (4T-2MTJ) spin transfer torque magnetoresistive random access memory was adopted to completely eliminate the standby power. A self-directed intelligent power-gating (IPG) scheme specialized for this associative processor is employed to optimize the operation power by only autonomously activating currently accessed memory cells. The operations of a prototype chip at 20 MHz are demonstrated by measurement. The proposed processor can successfully carry out single texture pattern matching within 6.5 µs using 128-dimension bag-of-feature patterns, and the measured average operation power of the entire processor core is only 600 µW. Compared with the twin chip designed with 6T static random access memory, 91.2% power reductions are achieved. More than 88.0% power reductions are obtained compared with the latest associative memories. The further power performance analysis is discussed in detail, which verifies the special superiority of the proposed processor in power consumption for large-capacity memory-based VLSI systems.

  18. Radiation-hardened nonvolatile MNOS RAM

    International Nuclear Information System (INIS)

    Wrobel, T.F.; Dodson, W.H.; Hash, G.L.; Jones, R.V.; Nasby, R.D.; Olson, R.J.

    1983-01-01

    A radiation hardened nonvolatile MNOS RAM is being developed at Sandia National Laboratories. The memory organization is 128 x 8 bits and utilizes two p-channel MNOS transistors per memory cell. The peripheral circuitry is constructed with CMOS metal gate and is processed with standard Sandia rad-hard processing techniques. The devices have memory retention after a dose-rate exposure of 1E12 rad(Si)/s, are functional after total dose exposure of 1E6 rad(Si), and are dose-rate upset resistant to levels of 7E8 rad(Si)/s

  19. An ultra-low-power area-efficient non-volatile memory in a 0.18 μm single-poly CMOS process for passive RFID tags

    International Nuclear Information System (INIS)

    Jia Xiaoyun; Feng Peng; Zhang Shengguang; Wu Nanjian; Zhao Baiqin; Liu Su

    2013-01-01

    This paper presents an ultra-low-power area-efficient non-volatile memory (NVM) in a 0.18 μm single-poly standard CMOS process for passive radio frequency identification (RFID) tags. In the memory cell, a novel low-power operation method is proposed to realize bi-directional Fowler—Nordheim tunneling during write operation. Furthermore, the cell is designed with PMOS transistors and coupling capacitors to minimize its area. In order to improve its reliability, the cell consists of double floating gates to store the data, and the 1 kbit NVM was implemented in a 0.18 μm single-poly standard CMOS process. The area of the memory cell and 1 kbit memory array is 96 μm 2 and 0.12 mm 2 , respectively. The measured results indicate that the program/erase voltage ranges from 5 to 6 V The power consumption of the read/write operation is 0.19 μW/0.69 μW at a read/write rate of (268 kb/s)/(3.0 kb/s). (semiconductor integrated circuits)

  20. Observing the amorphous-to-crystalline phase transition in Ge{sub 2}Sb{sub 2}Te{sub 5} non-volatile memory materials from ab initio molecular-dynamics simulations

    Energy Technology Data Exchange (ETDEWEB)

    Lee, T.H.; Elliott, S.R. [Department of Chemistry, University of Cambridge, Lensfield Road, CB2 1EW Cambridge (United Kingdom)

    2012-10-15

    Phase-change memory is a promising candidate for the next generation of non-volatile memory devices. This technology utilizes reversible phase transitions between amorphous and crystalline phases of a recording material, and has been successfully used in rewritable optical data storage, revealing its feasibility. In spite of the importance of understanding the nucleation and growth processes that play a critical role in the phase transition, this understanding is still incomplete. Here, we present observations of the early stages of crystallization in Ge{sub 2}Sb{sub 2}Te{sub 5} materials through ab initio molecular-dynamics simulations. Planar structures, including fourfold rings and planes, play an important role in the formation and growth of crystalline clusters in the amorphous matrix. At the same time, vacancies facilitate crystallization by providing space at the glass-crystalline interface for atomic diffusion, which results in fast crystal growth, as observed in simulations and experiments. The microscopic mechanism of crystallization presented here may deepen our understanding of the phase transition occurring in real devices, providing an opportunity to optimize the memory performance of phase-change materials. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  1. The Associative Structure of Memory for Multi-Element Events

    Science.gov (United States)

    2013-01-01

    The hippocampus is thought to be an associative memory “convergence zone,” binding together the multimodal elements of an experienced event into a single engram. This predicts a degree of dependency between the retrieval of the different elements comprising an event. We present data from a series of studies designed to address this prediction. Participants vividly imagined a series of person–location–object events, and memory for these events was assessed across multiple trials of cued retrieval. Consistent with the prediction, a significant level of dependency was found between the retrieval of different elements from the same event. Furthermore, the level of dependency was sensitive both to retrieval task, with higher dependency during cued recall than cued recognition, and to subjective confidence. We propose a simple model, in which events are stored as multiple pairwise associations between individual event elements, and dependency is captured by a common factor that varies across events. This factor may relate to between-events modulation of the strength of encoding, or to a process of within-event “pattern completion” at retrieval. The model predicts the quantitative pattern of dependency in the data when changes in the level of guessing with retrieval task and confidence are taken into account. Thus, we find direct behavioral support for the idea that memory for complex multimodal events depends on the pairwise associations of their constituent elements and that retrieval of the various elements corresponding to the same event reflects a common factor that varies from event to event. PMID:23915127

  2. Nanoscale observations of the operational failure for phase-change-type nonvolatile memory devices using Ge2Sb2Te5 chalcogenide thin films

    International Nuclear Information System (INIS)

    Yoon, Sung-Min; Choi, Kyu-Jeong; Lee, Nam-Yeal; Lee, Seung-Yun; Park, Young-Sam; Yu, Byoung-Gon

    2007-01-01

    In this study, a phase-change memory device was fabricated and the origin of device failure mode was examined using transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS). Ge 2 Sb 2 Te 5 (GST) was used as the active phase-change material in the memory device and the active pore size was designed to be 0.5 μm. After the programming signals of more than 2x10 6 cycles were repeatedly applied to the device, the high-resistance memory state (reset) could not be rewritten and the cell resistance was fixed at the low-resistance state (set). Based on TEM and EDS studies, Sb excess and Ge deficiency in the device operating region had a strong effect on device reliability, especially under endurance-demanding conditions. An abnormal segregation and oxidation of Ge also was observed in the region between the device operating and inactive peripheral regions. To guarantee an data endurability of more than 1x10 10 cycles of PRAM, it is very important to develop phase-change materials with more stable compositions and to reduce the current required for programming

  3. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5-x/TaO2-x bilayer structures

    Science.gov (United States)

    Lee, Myoung-Jae; Lee, Chang Bum; Lee, Dongsoo; Lee, Seung Ryul; Chang, Man; Hur, Ji Hyun; Kim, Young-Bae; Kim, Chang-Jung; Seo, David H.; Seo, Sunae; Chung, U.-In; Yoo, In-Kyeong; Kim, Kinam

    2011-08-01

    Numerous candidates attempting to replace Si-based flash memory have failed for a variety of reasons over the years. Oxide-based resistance memory and the related memristor have succeeded in surpassing the specifications for a number of device requirements. However, a material or device structure that satisfies high-density, switching-speed, endurance, retention and most importantly power-consumption criteria has yet to be announced. In this work we demonstrate a TaOx-based asymmetric passive switching device with which we were able to localize resistance switching and satisfy all aforementioned requirements. In particular, the reduction of switching current drastically reduces power consumption and results in extreme cycling endurances of over 1012. Along with the 10 ns switching times, this allows for possible applications to the working-memory space as well. Furthermore, by combining two such devices each with an intrinsic Schottky barrier we eliminate any need for a discrete transistor or diode in solving issues of stray leakage current paths in high-density crossbar arrays.

  4. Pluto's Nonvolatile Chemical Compounds

    Science.gov (United States)

    Grundy, William M.; Binzel, Richard; Cook, Jason C.; Cruikshank, Dale P.; Dalle Ore, Cristina M.; Earle, Alissa M.; Ennico, Kimberly; Jennings, Donald; Howett, Carly; Kaiser, Ralf-Ingo; Linscott, Ivan; Lunsford, A. W.; Olkin, Catherine B.; Parker, Alex Harrison; Parker, Joel Wm.; Philippe, Sylvain; Protopapa, Silvia; Quirico, Eric; Reuter, D. C.; Schmitt, Bernard; Singer, Kelsi N.; Spencer, John R.; Stansberry, John A.; Stern, S. Alan; Tsang, Constantine; Verbiscer, Anne J.; Weaver, Harold A.; Weigle, G. E.; Young, Leslie

    2016-10-01

    Despite the migration of Pluto's volatile ices (N2, CO, and CH4) around the surface on seasonal timescales, the planet's non-volatile materials are not completely hidden from view. They occur in a variety of provinces formed over a wide range of timescales, including rugged mountains and chasms, the floors of mid-latitude craters, and an equatorial belt of especially dark and reddish material typified by the informally named Cthulhu Regio. NASA's New Horizons probe observed several of these regions at spatial resolutions as fine as 3 km/pixel with its LEISA imaging spectrometer, covering wavelengths from 1.25 to 2.5 microns. Various compounds that are much lighter than the tholin-like macromolecules responsible for the reddish coloration, but that are not volatile at Pluto surface temperatures such as methanol (CH3OH) and ethane (C2H6) have characteristic absorption bands within LEISA's wavelength range. This presentation will describe their geographic distributions and attempt to constrain their origins. Possibilities include an inheritance from Pluto's primordial composition (the likely source of H2O ice seen on Pluto's surface) or ongoing production from volatile precursors through photochemistry in Pluto's atmosphere or through radiolysis on Pluto's surface. New laboratory data inform the analysis.This work was supported by NASA's New Horizons project.

  5. Acoustically assisted spin-transfer-torque switching of nanomagnets: An energy-efficient hybrid writing scheme for non-volatile memory

    International Nuclear Information System (INIS)

    Biswas, Ayan K.; Bandyopadhyay, Supriyo; Atulasimha, Jayasimha

    2013-01-01

    We show that the energy dissipated to write bits in spin-transfer-torque random access memory can be reduced by an order of magnitude if a surface acoustic wave (SAW) is launched underneath the magneto-tunneling junctions (MTJs) storing the bits. The SAW-generated strain rotates the magnetization of every MTJs' soft magnet from the easy towards the hard axis, whereupon passage of a small spin-polarized current through a target MTJ selectively switches it to the desired state with > 99.99% probability at room temperature, thereby writing the bit. The other MTJs return to their original states at the completion of the SAW cycle

  6. Pulsed ion-beam assisted deposition of Ge nanocrystals on SiO{sub 2} for non-volatile memory device

    Energy Technology Data Exchange (ETDEWEB)

    Stepina, N.P. [Institute of Semiconductor Physics, Lavrenteva 13, 630090 Novosibirsk (Russian Federation)], E-mail: nstepina@mail.ru; Dvurechenskii, A.V.; Armbrister, V.A.; Kirienko, V.V.; Novikov, P.L.; Kesler, V.G.; Gutakovskii, A.K.; Smagina, Z.V.; Spesivtzev, E.V. [Institute of Semiconductor Physics, Lavrenteva 13, 630090 Novosibirsk (Russian Federation)

    2008-11-03

    A floating gate memory structure, utilizing Ge nanocrystals (NCs) deposited on tunnel SiO{sub 2}, have been fabricated using pulsed low energy ion-beam induced molecular-beam deposition (MBD) in ultra-high vacuum. The ion-beam action is shown to stimulate the nucleation of Ge NCs when being applied after thin Ge layer deposition. Growth conditions for independent change of NCs size and array density were established allowing to optimize the structure parameters required for memory device. Activation energy E = 0.25 eV was determined from the temperature dependence of NCs array density. Monte Carlo simulation has shown that the process, determining NCs array density, is the surface diffusion. Embedding of the crystalline Ge dots into silicon oxide was carried out by selective oxidation of Si(100)/SiO{sub 2} /Ge(NCs)/poly-Si structure. MOS-capacitor obtained after oxidation showed a hysteresis in its C-V curves attributed to charge retention in the Ge dots.

  7. Improvement of multi-level resistive switching characteristics in solution-processed AlO x -based non-volatile resistive memory using microwave irradiation

    Science.gov (United States)

    Kim, Seung-Tae; Cho, Won-Ju

    2018-01-01

    We fabricated a resistive random access memory (ReRAM) device on a Ti/AlO x /Pt structure with solution-processed AlO x switching layer using microwave irradiation (MWI), and demonstrated multi-level cell (MLC) operation. To investigate the effect of MWI power on the MLC characteristics, post-deposition annealing was performed at 600-3000 W after AlO x switching layer deposition, and the MLC operation was compared with as-deposited (as-dep) and conventional thermally annealing (CTA) treated devices. All solution-processed AlO x -based ReRAM devices exhibited bipolar resistive switching (BRS) behavior. We found that these devices have four-resistance states (2 bits) of MLC operation according to the modulation of the high-resistance state (HRSs) through reset voltage control. Particularly, compared to the as-dep and CTA ReRAM devices, the MWI-treated ReRAM devices showed a significant increase in the memory window and stable endurance for multi-level operation. Moreover, as the MWI power increased, excellent MLC characteristics were exhibited because the resistance ratio between each resistance state was increased. In addition, it exhibited reliable retention characteristics without deterioration at 25 °C and 85 °C for 10 000 s. Finally, the relationship between the chemical characteristics of the solution-processed AlO x switching layer and BRS-based multi-level operation according to the annealing method and MWI power was investigated using x-ray photoelectron spectroscopy.

  8. Elements of episodic-like memory in animal models.

    Science.gov (United States)

    Crystal, Jonathon D

    2009-03-01

    Representations of unique events from one's past constitute the content of episodic memories. A number of studies with non-human animals have revealed that animals remember specific episodes from their past (referred to as episodic-like memory). The development of animal models of memory holds enormous potential for gaining insight into the biological bases of human memory. Specifically, given the extensive knowledge of the rodent brain, the development of rodent models of episodic memory would open new opportunities to explore the neuroanatomical, neurochemical, neurophysiological, and molecular mechanisms of memory. Development of such animal models holds enormous potential for studying functional changes in episodic memory in animal models of Alzheimer's disease, amnesia, and other human memory pathologies. This article reviews several approaches that have been used to assess episodic-like memory in animals. The approaches reviewed include the discrimination of what, where, and when in a radial arm maze, dissociation of recollection and familiarity, object recognition, binding, unexpected questions, and anticipation of a reproductive state. The diversity of approaches may promote the development of converging lines of evidence on the difficult problem of assessing episodic-like memory in animals.

  9. Phase change materials in non-volatile storage

    OpenAIRE

    Ielmini, Daniele; Lacaita, Andrea L.

    2011-01-01

    After revolutionizing the technology of optical data storage, phase change materials are being adopted in non-volatile semiconductor memories. Their success in electronic storage is mostly due to the unique properties of the amorphous state where carrier transport phenomena and thermally-induced phase change cooperate to enable high-speed, low-voltage operation and stable data retention possible within the same material. This paper reviews the key physical properties that make this phase so s...

  10. Volatile and Nonvolatile Characteristics of Asymmetric Dual-Gate Thyristor RAM with Vertical Structure.

    Science.gov (United States)

    Kim, Hyun-Min; Kwon, Dae Woong; Kim, Sihyun; Lee, Kitae; Lee, Junil; Park, Euyhwan; Lee, Ryoongbin; Kim, Hyungjin; Kim, Sangwan; Park, Byung-Gook

    2018-09-01

    In this paper, the volatile and nonvolatile characteristics of asymmetric dual-gate thyristor random access memory (TRAM) are investigated using the technology of a computer-aided design (TCAD) simulation. Owing to the use of two independent gates having different gate dielectric layers, volatile and nonvolatile memory functions can be realized in a single device. The first gate with a silicon oxide layer controls the one-transistor dynamic random access memory (1T-DRAM) characteristics of the device. From the simulation results, a rapid write speed (107) can be achieved. The second gate, whose dielectric material is composed of oxide/nitride/oxide (O/N/O) layers, is used to implement the nonvolatile property by trapping charges in the nitride layer. In addition, this offers an advantage when processing the 3D-stack memory application, as the device has a vertical channel structure with polycrystalline silicon.

  11. The organization of associative memory with lamination of elements ...

    African Journals Online (AJOL)

    . Processing of character sets is carried out on bit cutoffs in the associative memory at the same time. For the hardware support of steps of retrieval operation the original structure of the associative memory is offered. The structure contains new ...

  12. Elements of episodic-like memory in animals.

    Science.gov (United States)

    Clayton, N S; Griffiths, D P; Emery, N J; Dickinson, A

    2001-09-29

    A number of psychologists have suggested that episodic memory is a uniquely human phenomenon and, until recently, there was little evidence that animals could recall a unique past experience and respond appropriately. Experiments on food-caching memory in scrub jays question this assumption. On the basis of a single caching episode, scrub jays can remember when and where they cached a variety of foods that differ in the rate at which they degrade, in a way that is inexplicable by relative familiarity. They can update their memory of the contents of a cache depending on whether or not they have emptied the cache site, and can also remember where another bird has hidden caches, suggesting that they encode rich representations of the caching event. They make temporal generalizations about when perishable items should degrade and also remember the relative time since caching when the same food is cached in distinct sites at different times. These results show that jays form integrated memories for the location, content and time of caching. This memory capability fulfils Tulving's behavioural criteria for episodic memory and is thus termed 'episodic-like'. We suggest that several features of episodic memory may not be unique to humans.

  13. Topology Optimization of Shape Memory Alloy Actuators using Element Connectivity Parameterization

    DEFF Research Database (Denmark)

    Langelaar, Matthijs; Yoon, Gil Ho; Kim, Yoon Young

    2005-01-01

    This paper presents the first application of topology optimization to the design of shape memory alloy actuators. Shape memory alloys (SMA’s) exhibit strongly nonlinear, temperature-dependent material behavior. The complexity in the constitutive behavior makes the topology design of SMA structure......) stiffness matrix of continuum finite elements. Therefore, any finite element code, including commercial codes, can be readily used for the ECP implementation. The key ideas and characteristics of these methods will be presented in this paper....

  14. Elements of episodic-like memory in animals.

    OpenAIRE

    Clayton, N S; Griffiths, D P; Emery, N J; Dickinson, A

    2001-01-01

    A number of psychologists have suggested that episodic memory is a uniquely human phenomenon and, until recently, there was little evidence that animals could recall a unique past experience and respond appropriately. Experiments on food-caching memory in scrub jays question this assumption. On the basis of a single caching episode, scrub jays can remember when and where they cached a variety of foods that differ in the rate at which they degrade, in a way that is inexplicable by relative fam...

  15. Embedded 3D Nonvolatile Memory, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Integrated circuits in NASA spacecraft and vehicle electronics must operate over large temperature extremes and mitigate radiation effects that can result in upset...

  16. Gift from statistical learning: Visual statistical learning enhances memory for sequence elements and impairs memory for items that disrupt regularities.

    Science.gov (United States)

    Otsuka, Sachio; Saiki, Jun

    2016-02-01

    Prior studies have shown that visual statistical learning (VSL) enhances familiarity (a type of memory) of sequences. How do statistical regularities influence the processing of each triplet element and inserted distractors that disrupt the regularity? Given that increased attention to triplets induced by VSL and inhibition of unattended triplets, we predicted that VSL would promote memory for each triplet constituent, and degrade memory for inserted stimuli. Across the first two experiments, we found that objects from structured sequences were more likely to be remembered than objects from random sequences, and that letters (Experiment 1) or objects (Experiment 2) inserted into structured sequences were less likely to be remembered than those inserted into random sequences. In the subsequent two experiments, we examined an alternative account for our results, whereby the difference in memory for inserted items between structured and random conditions is due to individuation of items within random sequences. Our findings replicated even when control letters (Experiment 3A) or objects (Experiment 3B) were presented before or after, rather than inserted into, random sequences. Our findings suggest that statistical learning enhances memory for each item in a regular set and impairs memory for items that disrupt the regularity. Copyright © 2015 Elsevier B.V. All rights reserved.

  17. High speed vision processor with reconfigurable processing element array based on full-custom distributed memory

    Science.gov (United States)

    Chen, Zhe; Yang, Jie; Shi, Cong; Qin, Qi; Liu, Liyuan; Wu, Nanjian

    2016-04-01

    In this paper, a hybrid vision processor based on a compact full-custom distributed memory for near-sensor high-speed image processing is proposed. The proposed processor consists of a reconfigurable processing element (PE) array, a row processor (RP) array, and a dual-core microprocessor. The PE array includes two-dimensional processing elements with a compact full-custom distributed memory. It supports real-time reconfiguration between the PE array and the self-organized map (SOM) neural network. The vision processor is fabricated using a 0.18 µm CMOS technology. The circuit area of the distributed memory is reduced markedly into 1/3 of that of the conventional memory so that the circuit area of the vision processor is reduced by 44.2%. Experimental results demonstrate that the proposed design achieves correct functions.

  18. Transparent Memory For Harsh Electronics

    KAUST Repository

    Ho, C. H.; Duran Retamal, Jose Ramon; Yang, P. K.; Lee, C. P.; Tsai, M. L.; Kang, C. F.; He, Jr-Hau

    2017-01-01

    As a new class of non-volatile memory, resistive random access memory (RRAM) offers not only superior electronic characteristics, but also advanced functionalities, such as transparency and radiation hardness. However, the environmental tolerance

  19. A novel network of chaotic elements and its application in multi-valued associative memory

    International Nuclear Information System (INIS)

    Xiu Chunbo; Liu Xiangdong; Tang Yunyu; Zhang Yuhe

    2004-01-01

    We give a novel chaotic element model whose activation function composed of Gauss and Sigmoid function. It is shown that the model may exhibit a complex dynamic behavior. The most significant bifurcation processes, leading to chaos, are investigated through the computation of the Lyapunov exponents. Based on this model, we propose a novel network of chaotic elements, which can be applied in associative memory, and then investigate its dynamic behavior. It is worth noting that multi-valued associative memory can also be realized by this network

  20. Effect of ternary alloying elements on the shape memory behavior of Ti-Ta alloys

    International Nuclear Information System (INIS)

    Buenconsejo, Pio John S.; Kim, Hee Young; Miyazaki, Shuichi

    2009-01-01

    The effect of ternary alloying elements (X = V, Cr, Fe, Zr, Hf, Mo, Sn, Al) on the shape memory behavior of Ti-30Ta-X alloys was investigated. All the alloying elements decreased the martensitic transformation temperatures. The decrease in the martensitic transformation start (M s ) temperature due to alloying was affected by the atomic size and number of valence electrons of the alloying element. A larger number of valence electrons and a smaller atomic radius of an alloying element decreased the M s more strongly. The effect of the alloying elements on suppressing the aging effect on the shape memory behavior was also investigated. It was found that the additions of Sn and Al to Ti-Ta were effective in suppressing the effect of aging on the shape memory behavior, since they strongly suppress the formation of ω phase during aging treatment. For this reason the Ti-30Ta-1Al and Ti-30Ta-1Sn alloys exhibited a stable high-temperature shape memory effect during thermal cycling.

  1. Cued Recall from Image and Sentence Memory: A Shift from Episodic to Identical Elements Representation

    Science.gov (United States)

    Rickard, Timothy C.; Bajic, Daniel

    2006-01-01

    The applicability of the identical elements (IE) model of arithmetic fact retrieval (T. C. Rickard, A. F. Healy, & L. E. Bourne, 1994) to cued recall from episodic (image and sentence) memory was explored in 3 transfer experiments. In agreement with results from arithmetic, speedup following even minimal practice recalling a missing word from an…

  2. Nano-memory-element applications of carbon nanocapsule encapsulating potassium ions: molecular dynamics study

    International Nuclear Information System (INIS)

    Kang, Jeong Won; Hwang, Ho Jung

    2004-01-01

    We investigated the internal dynamics of ionic fluidic shuttle memory elements consisting of potassium ions encapsulated in C 640 nanocapsules. The systems proposed were the encapsulated-ion shuttle memory devices such as (13 K + ) at C 640 , (3 K + -C 60 -2 K + ) at C 640 and (5 K + -C 60 ) at C 640 . The energetics and the operating responses of ionic fluidic shuttle memory devices, such as transitions between the two states of the C 640 capsule, were examined by using classical molecular dynamics simulations of the shuttle media in the C 640 capsule under external force fields. The operating force fields for stable operations of the shuttle memory device were investigated.

  3. Effect of AlN layer on the bipolar resistive switching behavior in TiN thin film based ReRAM device for non-volatile memory application

    Science.gov (United States)

    Prakash, Ravi; Kaur, Davinder

    2018-05-01

    The effect of an additional AlN layer in the Cu/TiN/AlN/Pt stack configuration deposited using sputtering has been investigated. The Cu/TiN/AlN/Pt device shows a tristate resistive switching. Multilevel switching is facilitated by ionic and metallic filament formation, and the nature of the filaments formed is confirmed by performing a resistance vs. temperature measurement. Ohmic behaviour and trap controlled space charge limited current (SCLC) conduction mechanisms are confirmed as dominant conduction mechanism at low resistance state (LRS) and high resistance state (HRS). High resistance ratio (102) corresponding to HRS and LRS, good write/erase endurance (105) and non-volatile long retention (105s) are also observed. Higher thermal conductivity of the AlN layer is the main reasons for the enhancement of resistive switching performance in Cu/TiN/AlN/Pt cell. The above result suggests the feasibility of Cu/TiN/AlN/Pt devices for multilevel nonvolatile ReRAM application.

  4. Measurements of non-volatile aerosols with a VTDMA and their correlations with carbonaceous aerosols in Guangzhou, China

    Science.gov (United States)

    Cheung, Heidi H. Y.; Tan, Haobo; Xu, Hanbing; Li, Fei; Wu, Cheng; Yu, Jian Z.; Chan, Chak K.

    2016-07-01

    Simultaneous measurements of aerosol volatility and carbonaceous matters were conducted at a suburban site in Guangzhou, China, in February and March 2014 using a volatility tandem differential mobility analyzer (VTDMA) and an organic carbon/elemental carbon (OC / EC) analyzer. Low volatility (LV) particles, with a volatility shrink factor (VSF) at 300 °C exceeding 0.9, contributed 5 % of number concentrations of the 40 nm particles and 11-15 % of the 80-300 nm particles. They were composed of non-volatile material externally mixed with volatile material, and therefore did not evaporate significantly at 300 °C. Non-volatile material mixed internally with the volatile material was referred to as medium volatility (MV, 0.4 transported at low altitudes (below 1500 m) for over 40 h before arrival. Further comparison with the diurnal variations in the mass fractions of EC and the non-volatile OC in PM2.5 suggests that the non-volatile residuals may be related to both EC and non-volatile OC in the afternoon, during which the concentration of aged organics increased. A closure analysis of the total mass of LV and MV residuals and the mass of EC or the sum of EC and non-volatile OC was conducted. It suggests that non-volatile OC, in addition to EC, was one of the components of the non-volatile residuals measured by the VTDMA in this study.

  5. Memory list for the ordering of nuclear fuel elements with UO2 fuel

    International Nuclear Information System (INIS)

    1977-01-01

    The memory list will help to simplify and speed up the technical procedure of fuel element supply for nuclear reactors. Operators of nuclear power plants take great interest in the latest state of thechnology, if sufficiently tested, being applied with regard to material, manufacturing and testing methods. In order to obtain an unlimited availability of the nuclear plant in the future, this application of technology should be taken care of when designing and producing fuel elements. When ordering fuel elements special attention should be drawn to the interdependence of reactor and fuel element with reqard to design and construction, about which, howevers, no further details are given. When ordering fuel elements the operator give the producer all design data of the reactor core and the fuel elements as well as the planned operation mode. He also hands in the respective graphs and the required conditions for design so that a correct and detailed offer can be supplied. An exemplary extent of supply is shown in the given memory list. The regulations required herefore on passing technical material to the fuel element producers have to be established by agreements made by the customer. The order to be given should be itemized as follows: requirements, quality controland quality assurance, warranties and conditions, limits and extent of supply, terms of delivery. (orig./HP) [de

  6. Effect of alloying elements on the shape memory properties of ductile Cu-Al-Mn alloys

    International Nuclear Information System (INIS)

    Sutou, Y.; Kainuma, R.; Ishida, K.

    1999-01-01

    The effect of alloying elements on the M s temperature, ductility and the shape memory properties of Cu-Al-Mn ductile shape memory (SM) alloys was investigated by differential scanning calorimetry, cold-rolling and tensile test techniques. It was found that the addition of Au, Si and Zn to the Cu 73 -Al 17 -Mn 10 alloy stabilized the martensite (6M) phase increasing the M s temperature, while the addition of Ag, Co, Cr, Fe, Ni, Sn and Ti decreased the stability of the martensite phase, decreasing the M s temperature. The SM properties were improved by the addition of Co, Ni, Cr and Ti. (orig.)

  7. Coexistence of nonvolatility and volatility in Pt/Nb-doped SrTiO3/In memristive devices

    International Nuclear Information System (INIS)

    Yang, M; Bao, D H; Li, S W

    2013-01-01

    Memristive devices are triggering innovations in the fields of nonvolatile memory, digital logic, analogue circuits, neuromorphic engineering, and so on. Creating new memristive devices with unique characteristics would be significant for these emergent applications. Here we report the coexistence of nonvolatility and volatility in Pt/Nb-doped SrTiO 3 (NSTO)/In memristive devices. The Pt/NSTO interface contributes a nonvolatile resistive switching behaviour, whereas the NSTO/In interface displays a volatile hysteresis loop. Combining the two interfaces in the Pt/NSTO/In devices leads to the unique coexistence of nonvolatility and volatility. The results imply more opportunities to invent new memristive devices by engineering both interfaces in metal/insulator/metal structures. (paper)

  8. Memory effects in MIS structures based on silicon and polymethylmethacrylate with nanoparticle charge-storage elements

    Energy Technology Data Exchange (ETDEWEB)

    Mabrook, M.F. [School of Engineering and Centre for Molecular and Nanoscale Electronics, Durham University, South Road, Durham DH1 3LE (United Kingdom)], E-mail: m.f.mabrook@durham.ac.uk; Jombert, A.S. [School of Engineering and Centre for Molecular and Nanoscale Electronics, Durham University, South Road, Durham DH1 3LE (United Kingdom); Department of Chemistry, Durham University, South Road, Durham DH1 3LE (United Kingdom); Machin, S.E.; Pearson, C.; Kolb, D. [School of Engineering and Centre for Molecular and Nanoscale Electronics, Durham University, South Road, Durham DH1 3LE (United Kingdom); Coleman, K.S. [Department of Chemistry, Durham University, South Road, Durham DH1 3LE (United Kingdom); Zeze, D.A.; Petty, M.C. [School of Engineering and Centre for Molecular and Nanoscale Electronics, Durham University, South Road, Durham DH1 3LE (United Kingdom)

    2009-03-15

    We report on the electrical behaviour of metal-insulator-semiconductor (MIS) structures fabricated on p-type silicon substrates and using polymethylmethacrylate (PMMA) as the dielectric. Gold nanoparticles, single-wall carbon nanotubes and C{sub 60}, deposited at room temperature, were used as charge-storage elements. In all cases, the MIS devices containing the nanoparticles exhibited hysteresis in their capacitance versus voltage characteristics, with a memory window depending on the range of the voltage sweep. This hysteresis was attributed to the charging and discharging of the nanoparticles from the gate electrode. A relatively large memory window of about 2.2 V was achieved by scanning the applied voltage of an Al/PMMA/C{sub 60}/SiO{sub 2}/Si structure between 4 and -4 V. Gold nanoparticle-based memory devices produced the best charge retention behaviour compared to the other MIS structures investigated.

  9. Inkjet-printing of non-volatile organic resistive devices and crossbar array structures

    Science.gov (United States)

    Sax, Stefan; Nau, Sebastian; Popovic, Karl; Bluemel, Alexander; Klug, Andreas; List-Kratochvil, Emil J. W.

    2015-09-01

    Due to the increasing demand for storage capacity in various electronic gadgets like mobile phones or tablets, new types of non-volatile memory devices have gained a lot of attention over the last few years. Especially multilevel conductance switching elements based on organic semiconductors are of great interest due to their relatively simple device architecture and their small feature size. Since organic semiconductors combine the electronic properties of inorganic materials with the mechanical characteristics of polymers, this class of materials is suitable for solution based large area device preparation techniques. Consequently, inkjet based deposition techniques are highly capable of facing preparation related challenges. By gradually replacing the evaporated electrodes with inkjet printed silver, the preparation related influence onto device performance parameters such as the ON/OFF ratio was investigated with IV measurements and high resolution transmission electron microscopy. Due to the electrode surface roughness the solvent load during the printing of the top electrode as well as organic layer inhomogeneity's the utilization in array applications is hampered. As a prototypical example a 1diode-1resistor element and a 2×2 subarray from 5×5 array matrix were fully characterized demonstrating the versatility of inkjet printing for device preparation.

  10. Nonlinear finite element formulation for analyzing shape memory alloy cylindrical panels

    International Nuclear Information System (INIS)

    Mirzaeifar, R; Shakeri, M; Sadighi, M

    2009-01-01

    In this paper, a general incremental displacement based finite element formulation capable of modeling material nonlinearities based on first-order shear deformation theory (FSDT) is developed for cylindrical shape memory alloy (SMA) shells. The Boyd–Lagoudas phenomenological model with polynomial hardening in conjunction with 3D incremental convex cutting plane explicit algorithm is implemented for preparing the SMA constitutive model in the finite element formulation. Several numerical examples are presented for demonstrating the performance of the proposed formulation in stress, deflection and phase transformation analysis of pseudoelastic behavior of shape memory cylindrical panels with various boundary conditions. Also, it is shown that the presented formulation can be implemented for studying plates and beams with rectangular cross section

  11. A new approach for two-terminal electronic memory devices - Storing information on silicon nanowires

    Science.gov (United States)

    Saranti, Konstantina; Alotaibi, Sultan; Paul, Shashi

    2016-06-01

    The work described in this paper focuses on the utilisation of silicon nanowires as the information storage element in flash-type memory devices. Silicon nanostructures have attracted attention due to interesting electrical and optical properties, and their potential integration into electronic devices. A detailed investigation of the suitability of silicon nanowires as the charge storage medium in two-terminal non-volatile memory devices are presented in this report. The deposition of the silicon nanostructures was carried out at low temperatures (less than 400 °C) using a previously developed a novel method within our research group. Two-terminal non-volatile (2TNV) memory devices and metal-insulator-semiconductor (MIS) structures containing the silicon nanowires were fabricated and an in-depth study of their characteristics was carried out using current-voltage and capacitance techniques.

  12. Finite element calculation of the interaction energy of shape memory alloy

    International Nuclear Information System (INIS)

    Yang, Seung Yong

    2004-01-01

    Strain energy due to the mechanical interaction between self-accommodation groups of martensitic phase transformation is called interaction energy. Evaluation of the interaction energy should be accurate since the energy appears in constitutive models for predicting the mechanical behavior of shape memory alloy. In this paper, the interaction energy is evaluated in terms of theoretical formulation and explicit finite element calculation. A simple example with two habit plane variants was considered. It was shown that the theoretical formulation assuming elastic interaction between the self-accommodation group and matrix gives larger interaction energy than explicit finite element calculation in which transformation softening is accounted for

  13. A Microbeam Resonator with Partial Electrodes for Logic and Memory Elements

    KAUST Repository

    Hafiz, Md Abdullah Al

    2017-11-10

    We demonstrate logic and memory elements based on an in-plane clamped-clamped microbeam resonator. The micro-resonator is electrostatically actuated through a drive electrode and the motional signal is capacitively sensed at a sense electrode, while the resonance characteristics are modulated by DC voltage pulses provided at two separate partial electrodes, independent of the drive/sense electrodes. For the logic applications, we use two separate electrodes to provide DC voltages defined as the logic inputs. The high (low) motional signal at on-resonance (off-resonance) state is defined as the logic output state “1” (“0”). For the memory operation, two stable vibrational states, high and low, within the hysteretic regime are defined as the memory states, “1” and “0”, respectively. We take advantage of the split electrode configuration to provide positive and negative DC voltage pulses selectively to set/reset the memory states (“1”/“0”) without affecting the driving and sensing terminals. Excluding the energy cost for supporting electronics, these devices consume energy in 10’s of picojoules per logic/memory operations. Furthermore, the devices are fabricated using silicon on insulator (SOI) wafers, have the potential for on-chip integration, and operate at moderate pressure (~1 Torr) and room temperature.

  14. A Microbeam Resonator with Partial Electrodes for Logic and Memory Elements

    KAUST Repository

    Hafiz, Md Abdullah Al; Ilyas, Saad; Ahmed, Sally; Younis, Mohammad I.; Fariborzi, Hossein

    2017-01-01

    We demonstrate logic and memory elements based on an in-plane clamped-clamped microbeam resonator. The micro-resonator is electrostatically actuated through a drive electrode and the motional signal is capacitively sensed at a sense electrode, while the resonance characteristics are modulated by DC voltage pulses provided at two separate partial electrodes, independent of the drive/sense electrodes. For the logic applications, we use two separate electrodes to provide DC voltages defined as the logic inputs. The high (low) motional signal at on-resonance (off-resonance) state is defined as the logic output state “1” (“0”). For the memory operation, two stable vibrational states, high and low, within the hysteretic regime are defined as the memory states, “1” and “0”, respectively. We take advantage of the split electrode configuration to provide positive and negative DC voltage pulses selectively to set/reset the memory states (“1”/“0”) without affecting the driving and sensing terminals. Excluding the energy cost for supporting electronics, these devices consume energy in 10’s of picojoules per logic/memory operations. Furthermore, the devices are fabricated using silicon on insulator (SOI) wafers, have the potential for on-chip integration, and operate at moderate pressure (~1 Torr) and room temperature.

  15. Resistive Memory Devices for Radiation Resistant Non-Volatile Memory

    Data.gov (United States)

    National Aeronautics and Space Administration — Ionizing radiation in space can damage electronic equipment, corrupting data and even disabling computers. Radiation resistant (rad hard) strategies must be employed...

  16. Characterization of NiTi Shape Memory Damping Elements designed for Automotive Safety Systems

    Science.gov (United States)

    Strittmatter, Joachim; Clipa, Victor; Gheorghita, Viorel; Gümpel, Paul

    2014-07-01

    Actuator elements made of NiTi shape memory material are more and more known in industry because of their unique properties. Due to the martensitic phase change, they can revert to their original shape by heating when subjected to an appropriate treatment. This thermal shape memory effect (SME) can show a significant shape change combined with a considerable force. Therefore such elements can be used to solve many technical tasks in the field of actuating elements and mechatronics and will play an increasing role in the next years, especially within the automotive technology, energy management, power, and mechanical engineering as well as medical technology. Beside this thermal SME, these materials also show a mechanical SME, characterized by a superelastic plateau with reversible elongations in the range of 8%. This behavior is based on the building of stress-induced martensite of loaded austenite material at constant temperature and facilitates a lot of applications especially in the medical field. Both SMEs are attended by energy dissipation during the martensitic phase change. This paper describes the first results obtained on different actuator and superelastic NiTi wires concerning their use as damping elements in automotive safety systems. In a first step, the damping behavior of small NiTi wires up to 0.5 mm diameter was examined at testing speeds varying between 0.1 and 50 mm/s upon an adapted tensile testing machine. In order to realize higher testing speeds, a drop impact testing machine was designed, which allows testing speeds up to 4000 mm/s. After introducing this new type of testing machine, the first results of vertical-shock tests of superelastic and electrically activated actuator wires are presented. The characterization of these high dynamic phase change parameters represents the basis for new applications for shape memory damping elements, especially in automotive safety systems.

  17. Thermo-mechanically coupled fracture analysis of shape memory alloys using the extended finite element method

    Science.gov (United States)

    Hatefi Ardakani, S.; Ahmadian, H.; Mohammadi, S.

    2015-04-01

    In this paper, the extended finite element method is used for fracture analysis of shape memory alloys for both cases of super elastic and shape memory effects. Heat generation during the forward and reverse phase transformations can lead to temperature variation in the material because of strong thermo-mechanical coupling, which significantly influences the SMA mechanical behavior. First, the stationary crack mode is studied and the effects of loading rate on material behavior in the crack tip are examined. Then, the crack propagation analysis is performed in the presence of an initial crack by adopting a weighted averaging criterion, where the direction of crack propagation is determined by weighted averaging of effective stresses at all the integration points in the vicinity of the crack tip. Finally, several numerical examples are analyzed and the obtained results are compared with the available reference results.

  18. Lower Bounds in the Asymmetric External Memory Model

    DEFF Research Database (Denmark)

    Jacob, Riko; Sitchinava, Nodari

    2017-01-01

    Motivated by the asymmetric read and write costs of emerging non-volatile memory technologies, we study lower bounds for the problems of sorting, permuting and multiplying a sparse matrix by a dense vector in the asymmetric external memory model (AEM). Given an AEM with internal (symmetric) memory...... of size M, transfers between symmetric and asymmetric memory in blocks of size B and the ratio ω between write and read costs, we show Ω(min (N, ωN/B logω M/B N/B) lower bound for the cost of permuting N input elements. This lower bound also applies to the problem of sorting N elements. This proves...

  19. Finite element analysis of Al 2024/Cu-Al-Ni shape memory alloy composites with defects/cracks

    Science.gov (United States)

    Kotresh, M.; Benal, M. M., Dr; Siddalinga Swamy, N. H., Dr

    2018-02-01

    In this work, a numerical approach to predict the stress field behaviour of defect/crack in shape memory alloy (SMA) particles reinforced composite known as the adaptive composite is presented. Simulation is based on the finite element method. The critical stress field approach was used to determine the stresses around defect/crack. Thereby stress amplification issue is being resolved. In this paper, the effect volume % of shape memory alloy and shape memory effect of reinforcement for as-cast and SME trained composites are examined and discussed. Shape memory effect known as training is achieved by pre-straining of reinforcement particles by equivalent changes in their expansion coefficients.

  20. Fabrication and characterization of metal-ferroelectric (PbZr0.6Ti0.4O3)-insulator (La2O3)-semiconductor capacitors for nonvolatile memory applications

    Science.gov (United States)

    Juan, Trevor Pi-Chun; Lin, Cheng-Li; Shih, Wen-Chieh; Yang, Chin-Chieh; Lee, Joseph Ya-Min; Shye, Der-Chi; Lu, Jong-Hong

    2009-03-01

    Metal-ferroelectric-insulator-semiconductor thin-film capacitors with Pb(Zr0.6,Ti0.4)O3 (PZT) ferroelectric layer and high-k lanthanum oxide (La2O3) insulator layer were fabricated. The outdiffusion of atoms between La2O3 and silicon was examined by the secondary-ion-mass spectroscopy. The size of memory window as a function of PZT annealing temperature was discussed. The maximum memory window saturated to 0.7 V, which is close to the theoretical memory window ΔW ≈2dfEc≈0.8 V with higher annealing temperatures above 700 °C. The memory window starts to decrease due to charge injection when the sweep voltage is higher than 5 V at 600 °C-annealed samples. The C-V flatband voltage shift (ΔVFB) as a function of charge injection was characterized in this work. An energy band diagram of the Al/PZT//La2O3/p-Si system was proposed to explain the memory window and the flatband voltage shift.

  1. Nonvolatile flip-flop based on pseudo-spin-transistor architecture and its nonvolatile power-gating applications for low-power CMOS logic

    Science.gov (United States)

    Yamamoto, Shuu'ichirou; Shuto, Yusuke; Sugahara, Satoshi

    2013-07-01

    We computationally analyzed performance and power-gating (PG) ability of a new nonvolatile delay flip-flop (NV-DFF) based on pseudo-spin-MOSFET (PS-MOSFET) architecture using spin-transfer-torque magnetic tunnel junctions (STT-MTJs). The high-performance energy-efficient PG operations of the NV-DFF can be achieved owing to its cell structure employing PS-MOSFETs that can electrically separate the STT-MTJs from the ordinary DFF part of the NV-DFF. This separation also makes it possible that the break-even time (BET) of the NV-DFF is designed by the size of the PS-MOSFETs without performance degradation of the normal DFF operations. The effect of the area occupation ratio of the NV-DFFs to a CMOS logic system on the BET was also analyzed. Although the optimized BET was varied depending on the area occupation ratio, energy-efficient fine-grained PG with a BET of several sub-microseconds was revealed to be achieved. We also proposed microprocessors and system-on-chip (SoC) devices using nonvolatile hierarchical-memory systems wherein NV-DFF and nonvolatile static random access memory (NV-SRAM) circuits are used as fundamental building blocks. Contribution to the Topical Issue “International Semiconductor Conference Dresden-Grenoble - ISCDG 2012”, Edited by Gérard Ghibaudo, Francis Balestra and Simon Deleonibus.

  2. Annealing effects in plated-wire memory elements. I - Interdiffusion of copper and Permalloy.

    Science.gov (United States)

    Knudson, C. I.; Kench, J. R.

    1971-01-01

    Results of investigations using X-ray diffraction and electron-beam microprobe techniques have shown that copper and Permalloy platings interdiffuse at low temperatures when plated-wire memory elements are annealed for times as short as 50 hr. Measurable interdiffusion between Permalloy platings and gold substrates does not occur in similar conditions. Both magnetic and compositional changes during aging are found to occur by a thermally activated process with activation energies around 38 kcal/mol. It is shown, however, that copper-diffusion and magnetic-dispersion changes during aging are merely concurrent processes, neither being the other's cause.

  3. Utilization of Euler-Lagrange Equations in Circuits with Memory Elements

    Directory of Open Access Journals (Sweden)

    Z. Biolek

    2016-12-01

    Full Text Available It is well known that the equation of motion of a system can be set up using the Lagrangian and the dissipation function, which describe the conservative and dissipative parts of the system. However, this procedure, consisting in a systematic differentiation of the above state functions, cannot be used for circuits containing simultaneously conventional nonlinear elements such as the resistor, capacitor, and inductor, and their nonlinear memory versions – the memristor, memcapacitor, and meminductor. The paper provides a general solution to this problem and demonstrates it on the example of modeling Josephson’s junction.

  4. Non-volatile MOS RAM cell with capacitor-isolated nodes that are radiation accessible for rendering a non-permanent programmed information in the cell of a non-volatile one

    NARCIS (Netherlands)

    Widdershoven, Franciscus P.; Annema, Anne J.; Storms, Maurits M.N.; Pelgrom, Marcellinus J.M.; Pelgrom, Marcel J M

    2001-01-01

    A non-volatile, random access memory cell comprises first and second inverters each having an output node cross-coupled by cross-coupling means to an input node of the other inverter for forming a MOS RAM cell. The output node of each inverter is selectively connected via the conductor paths of

  5. Does computerized working memory training with game elements enhance motivation and training efficacy in children with ADHD?

    NARCIS (Netherlands)

    Prins, P.J.M.; Dovis, S.; Ponsioen, A.; ten Brink, E.; van der Oord, S.

    2011-01-01

    This study examined the benefits of adding game elements to standard computerized working memory (WM) training. Specifically, it examined whether game elements would enhance motivation and training performance of children with ADHD, and whether it would improve training efficacy. A total of 51

  6. DREAM (Downstream Regulatory Element Antagonist Modulator contributes to synaptic depression and contextual fear memory

    Directory of Open Access Journals (Sweden)

    Wu Long-Jun

    2010-01-01

    Full Text Available Abstract The downstream regulatory element antagonist modulator (DREAM, a multifunctional Ca2+-binding protein, binds specifically to DNA and several nucleoproteins regulating gene expression and with proteins outside the nucleus to regulate membrane excitability or calcium homeostasis. DREAM is highly expressed in the central nervous system including the hippocampus and cortex; however, the roles of DREAM in hippocampal synaptic transmission and plasticity have not been investigated. Taking advantage of transgenic mice overexpressing a Ca2+-insensitive DREAM mutant (TgDREAM, we used integrative methods including electrophysiology, biochemistry, immunostaining, and behavior tests to study the function of DREAM in synaptic transmission, long-term plasticity and fear memory in hippocampal CA1 region. We found that NMDA receptor but not AMPA receptor-mediated current was decreased in TgDREAM mice. Moreover, synaptic plasticity, such as long-term depression (LTD but not long-term potentiation (LTP, was impaired in TgDREAM mice. Biochemical experiments found that DREAM interacts with PSD-95 and may inhibit NMDA receptor function through this interaction. Contextual fear memory was significantly impaired in TgDREAM mice. By contrast, sensory responses to noxious stimuli were not affected. Our results demonstrate that DREAM plays a novel role in postsynaptic modulation of the NMDA receptor, and contributes to synaptic plasticity and behavioral memory.

  7. Strain-controlled nonvolatile magnetization switching

    Science.gov (United States)

    Geprägs, S.; Brandlmaier, A.; Brandt, M. S.; Gross, R.; Goennenwein, S. T. B.

    2014-11-01

    We investigate different approaches towards a nonvolatile switching of the remanent magnetization in single-crystalline ferromagnets at room temperature via elastic strain using ferromagnetic thin film/piezoelectric actuator hybrids. The piezoelectric actuator induces a voltage-controllable strain along different crystalline directions of the ferromagnetic thin film, resulting in modifications of its magnetization by converse magnetoelastic effects. We quantify the magnetization changes in the hybrids via ferromagnetic resonance spectroscopy and superconducting quantum interference device magnetometry. These measurements demonstrate a significant strain-induced change of the magnetization, limited by an inefficient strain transfer and domain formation in the particular system studied. To overcome these obstacles, we address practicable engineering concepts and use a model to demonstrate that a strain-controlled, nonvolatile magnetization switching should be possible in appropriately engineered ferromagnetic/piezoelectric actuator hybrids.

  8. Transformations of visual memory induced by implied motions of pattern elements.

    Science.gov (United States)

    Finke, R A; Freyd, J J

    1985-10-01

    Four experiments measured distortions in short-term visual memory induced by displays depicting independent translations of the elements of a pattern. In each experiment, observers saw a sequence of 4 dot patterns and were instructed to remember the third pattern and to compare it with the fourth. The first three patterns depicted translations of the dots in consistent, but separate directions. Error rates and reaction times for rejecting the fourth pattern as different from the third were substantially higher when the dots in that pattern were displaced slightly forward, in the same directions as the implied motions, compared with when the dots were displaced in the opposite, backward directions. These effects showed little variation across interstimulus intervals ranging from 250 to 2,000 ms, and did not depend on whether the displays gave rise to visual apparent motion. However, they were eliminated when the dots in the fourth pattern were displaced by larger amounts in each direction, corresponding to the dot positions in the next and previous patterns in the same inducing sequence. These findings extend our initial report of the phenomenon of "representational momentum" (Freyd & Finke, 1984a), and help to rule out alternatives to the proposal that visual memories tend to undergo, at least to some extent, the transformations implied by a prior sequence of observed events.

  9. Evaluation of reinitialization-free nonvolatile computer systems for energy-harvesting Internet of things applications

    Science.gov (United States)

    Onizawa, Naoya; Tamakoshi, Akira; Hanyu, Takahiro

    2017-08-01

    In this paper, reinitialization-free nonvolatile computer systems are designed and evaluated for energy-harvesting Internet of things (IoT) applications. In energy-harvesting applications, as power supplies generated from renewable power sources cause frequent power failures, data processed need to be backed up when power failures occur. Unless data are safely backed up before power supplies diminish, reinitialization processes are required when power supplies are recovered, which results in low energy efficiencies and slow operations. Using nonvolatile devices in processors and memories can realize a faster backup than a conventional volatile computer system, leading to a higher energy efficiency. To evaluate the energy efficiency upon frequent power failures, typical computer systems including processors and memories are designed using 90 nm CMOS or CMOS/magnetic tunnel junction (MTJ) technologies. Nonvolatile ARM Cortex-M0 processors with 4 kB MRAMs are evaluated using a typical computing benchmark program, Dhrystone, which shows a few order-of-magnitude reductions in energy in comparison with a volatile processor with SRAM.

  10. Nonvolatile resistive switching in Pt/laALO3/srTiO3 heterostructures

    KAUST Repository

    Wu, S.

    2013-12-12

    Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures, where the conducting layer near the LaAlO3/SrTiO3 interface serves as the "unconventional"bottom electrode although both oxides are band insulators. Interestingly, the switching between low-resistance and high-resistance states is accompanied by reversible transitions between tunneling and Ohmic characteristics in the current transport perpendicular to the planes of the heterojunctions. We propose that the observed resistive switching is likely caused by the electric-field-induced drift of charged oxygen vacancies across the LaAlO3/SrTiO3 interface and the creation of defect-induced gap states within the ultrathin LaAlO3 layer. These metal-oxide-oxide heterojunctions with atomically smooth interfaces and defect-controlled transport provide a platform for the development of nonvolatile oxide nanoelectronics that integrate logic and memory devices.

  11. Nonvolatile Resistive Switching in Pt/LaAlO_{3}/SrTiO_{3} Heterostructures

    Directory of Open Access Journals (Sweden)

    Shuxiang Wu

    2013-12-01

    Full Text Available Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO_{3}/SrTiO_{3} heterostructures, where the conducting layer near the LaAlO_{3}/SrTiO_{3} interface serves as the “unconventional” bottom electrode although both oxides are band insulators. Interestingly, the switching between low-resistance and high-resistance states is accompanied by reversible transitions between tunneling and Ohmic characteristics in the current transport perpendicular to the planes of the heterojunctions. We propose that the observed resistive switching is likely caused by the electric-field-induced drift of charged oxygen vacancies across the LaAlO_{3}/SrTiO_{3} interface and the creation of defect-induced gap states within the ultrathin LaAlO_{3} layer. These metal-oxide-oxide heterojunctions with atomically smooth interfaces and defect-controlled transport provide a platform for the development of nonvolatile oxide nanoelectronics that integrate logic and memory devices.

  12. Dual-functional Memory and Threshold Resistive Switching Based on the Push-Pull Mechanism of Oxygen Ions

    KAUST Repository

    Huang, Yi-Jen; Chao, Shih-Chun; Lien, Der-Hsien; Wen, Cheng-Yen; He, Jr-Hau; Lee, Si-Chen

    2016-01-01

    The combination of nonvolatile memory switching and volatile threshold switching functions of transition metal oxides in crossbar memory arrays is of great potential for replacing charge-based flash memory in very-large-scale integration. Here, we

  13. Memory

    Science.gov (United States)

    ... it has to decide what is worth remembering. Memory is the process of storing and then remembering this information. There are different types of memory. Short-term memory stores information for a few ...

  14. Finite Element Analysis of the Pseudo-elastic Behavior of Shape Memory Alloy Truss and Beam

    Directory of Open Access Journals (Sweden)

    Kamal M. Bajoria

    2010-07-01

    Full Text Available The pseudo-elastic behavior of Shape memory alloy (SMA truss and cantilever beam are investigated. Brinson’s one-dimensional material model, which uses the twinned and detwinned martensite fractions separately as internal variables, is applied in the algorithm to establish the SMA stress-strain characteristics. This material model also incorporates different young’s modulus for austenitic and martensite phase to represent the true SMA characteristics. In this model, a cosine function was used to express the evolution of the stress induced martensite fractions during the forward and reverse martensite phase transformation. A finite element formulation for the SMA truss member considering the geometric nonlinearity is proposed and the results are compared with the corresponding linear analysis. As a step forward, a finite element formulation for an SMA cantilever beam with an applied end moment is proposed. The load displacement characteristic for both the loading and unloading phases are considered to check the full pseudo-elastic hysteretic loop. In the numerical investigation, the stress-strain variation along the beam depth is also examined during the loading and unloading process to investigate the forward and reverse martensite phase transformation phenomena. Newton-Raphson’s iterative method is applied to get convergence to the equilibrium for each loading steps. During a complete loading-unloading process, the temperature is kept constant as the model is essentially an isothermal model. Numerical simulation is performed considering two different temperatures to demonstrate the effect of temperature on the hysteretic loop.

  15. 1T1R Nonvolatile Memory with Al/TiO2/Au and Sol-Gel-Processed Insulator for Barium Zirconate Nickelate Gate in Pentacene Thin Film Transistor

    Directory of Open Access Journals (Sweden)

    Ke-Jing Lee

    2017-12-01

    Full Text Available A one-transistor and one-resistor (1T1R architecture with a resistive random access memory (RRAM cell connected to an organic thin-film transistor (OTFT device is successfully demonstrated to avoid the cross-talk issues of only one RRAM cell. The OTFT device, which uses barium zirconate nickelate (BZN as a dielectric layer, exhibits favorable electrical properties, such as a high field-effect mobility of 2.5 cm2/Vs, low threshold voltage of −2.8 V, and low leakage current of 10−12 A, for a driver in the 1T1R operation scheme. The 1T1R architecture with a TiO2-based RRAM cell connected with a BZN OTFT device indicates a low operation current (10 μA and reliable data retention (over ten years. This favorable performance of the 1T1R device can be attributed to the additional barrier heights introduced by using Ni (II acetylacetone as a substitute for acetylacetone, and the relatively low leakage current of a BZN dielectric layer. The proposed 1T1R device with low leakage current OTFT and excellent uniform resistance distribution of RRAM exhibits a good potential for use in practical low-power electronic applications.

  16. Emerging memory technologies design, architecture, and applications

    CERN Document Server

    2014-01-01

    This book explores the design implications of emerging, non-volatile memory (NVM) technologies on future computer memory hierarchy architecture designs. Since NVM technologies combine the speed of SRAM, the density of DRAM, and the non-volatility of Flash memory, they are very attractive as the basis for future universal memories. This book provides a holistic perspective on the topic, covering modeling, design, architecture and applications. The practical information included in this book will enable designers to exploit emerging memory technologies to improve significantly the performance/power/reliability of future, mainstream integrated circuits. • Provides a comprehensive reference on designing modern circuits with emerging, non-volatile memory technologies, such as MRAM and PCRAM; • Explores new design opportunities offered by emerging memory technologies, from a holistic perspective; • Describes topics in technology, modeling, architecture and applications; • Enables circuit designers to ex...

  17. Microscale memory characteristics of virus-quantum dot hybrids

    Science.gov (United States)

    Portney, Nathaniel G.; Tseng, Ricky J.; Destito, Giuseppe; Strable, Erica; Yang, Yang; Manchester, Marianne; Finn, M. G.; Ozkan, Mihrimah

    2007-05-01

    An electrical multi stability effect was observed for a single layer device fabricated, comprising a hybrid virus-semiconducting quantum dot (CdSe /ZnS core/shell Qds) assembled onto icosahedral-mutant-virus template (CPMV-T184C). A substrate based bottom-up pathway was used to conjugate two different color emitting Qds for fluorescence visualization and to insert a charging/decharging factor. Pulsed wave measurements depicted distinct conductive states with repeatable and nonvolatile behavior as a functioning memory element.

  18. Investigation of Hafnium oxide/Copper resistive memory for advanced encryption applications

    Science.gov (United States)

    Briggs, Benjamin D.

    The Advanced Encryption Standard (AES) is a widely used encryption algorithm to protect data and communications in today's digital age. Modern AES CMOS implementations require large amounts of dedicated logic and must be tuned for either performance or power consumption. A high throughput, low power, and low die area AES implementation is required in the growing mobile sector. An emerging non-volatile memory device known as resistive memory (ReRAM) is a simple metal-insulator-metal capacitor device structure with the ability to switch between two stable resistance states. Currently, ReRAM is targeted as a non-volatile memory replacement technology to eventually replace flash. Its advantages over flash include ease of fabrication, speed, and lower power consumption. In addition to memory, ReRAM can also be used in advanced logic implementations given its purely resistive behavior. The combination of a new non-volatile memory element ReRAM along with high performance, low power CMOS opens new avenues for logic implementations. This dissertation will cover the design and process implementation of a ReRAM-CMOS hybrid circuit, built using IBM's 10LPe process, for the improvement of hardware AES implementations. Further the device characteristics of ReRAM, specifically the HfO2/Cu memory system, and mechanisms for operation are not fully correlated. Of particular interest to this work is the role of material properties such as the stoichiometry, crystallinity, and doping of the HfO2 layer and their effect on the switching characteristics of resistive memory. Material properties were varied by a combination of atomic layer deposition and reactive sputtering of the HfO2 layer. Several studies will be discussed on how the above mentioned material properties influence switching parameters, and change the underlying physics of device operation.

  19. Scientific developments of liquid crystal-based optical memory: a review

    Science.gov (United States)

    Prakash, Jai; Chandran, Achu; Biradar, Ashok M.

    2017-01-01

    The memory behavior in liquid crystals (LCs), although rarely observed, has made very significant headway over the past three decades since their discovery in nematic type LCs. It has gone from a mere scientific curiosity to application in variety of commodities. The memory element formed by numerous LCs have been protected by patents, and some commercialized, and used as compensation to non-volatile memory devices, and as memory in personal computers and digital cameras. They also have the low cost, large area, high speed, and high density memory needed for advanced computers and digital electronics. Short and long duration memory behavior for industrial applications have been obtained from several LC materials, and an LC memory with interesting features and applications has been demonstrated using numerous LCs. However, considerable challenges still exist in searching for highly efficient, stable, and long-lifespan materials and methods so that the development of useful memory devices is possible. This review focuses on the scientific and technological approach of fascinating applications of LC-based memory. We address the introduction, development status, novel design and engineering principles, and parameters of LC memory. We also address how the amalgamation of LCs could bring significant change/improvement in memory effects in the emerging field of nanotechnology, and the application of LC memory as the active component for futuristic and interesting memory devices.

  20. Non-volatile resistive switching in the Mott insulator (V1-xCrx)2O3

    Science.gov (United States)

    Querré, M.; Tranchant, J.; Corraze, B.; Cordier, S.; Bouquet, V.; Députier, S.; Guilloux-Viry, M.; Besland, M.-P.; Janod, E.; Cario, L.

    2018-05-01

    The discovery of non-volatile resistive switching in Mott insulators related to an electric-field-induced insulator to metal transition (IMT) has paved the way for their use in a new type of non-volatile memories, the Mott memories. While most of the previous studies were dedicated to uncover the resistive switching mechanism and explore the memory potential of chalcogenide Mott insulators, we present here a comprehensive study of resistive switching in the canonical oxide Mott insulator (V1-xCrx)2O3. Our work demonstrates that this compound undergoes a non-volatile resistive switching under electric field. This resistive switching is induced by a Mott transition at the local scale which creates metallic domains closely related to existing phases of the temperature-pressure phase diagram of (V1-xCrx)2O3. Our work demonstrates also reversible resistive switching in (V1-xCrx)2O3 crystals and thin film devices. Preliminary performances obtained on 880 nm thick layers with 500 nm electrodes show the strong potential of Mott memories based on the Mott insulator (V1-xCrx)2O3.

  1. Comparison Elements on STG DICE cell for Content-Addressable Memory and Simulation of Single-Event Transients

    Directory of Open Access Journals (Sweden)

    V. Ya. Stenin

    2017-06-01

    Full Text Available Comparison elements on base the STG DICE cell and the logical element “Exclusive OR” for a content-addressable memory were designed and simulated. The comparison element contains two identical joint groups of transistors that are spaced on the chip by the distance of four micrometers, so the loss of data in STG DICE cell practically excluded. On the characteristics of the new 65-nm CMOS comparison element, we predict the hardness of these item to single event rate (SER more to hundred times compared to elements on 6-transistors cells and the standard DICE cell with distances 0.5-0.6 μm between mutually sensitive nodes.

  2. Full-switching FSF-type superconducting spin-triplet magnetic random access memory element

    Science.gov (United States)

    Lenk, D.; Morari, R.; Zdravkov, V. I.; Ullrich, A.; Khaydukov, Yu.; Obermeier, G.; Müller, C.; Sidorenko, A. S.; von Nidda, H.-A. Krug; Horn, S.; Tagirov, L. R.; Tidecks, R.

    2017-11-01

    In the present work a superconducting Co/CoOx/Cu41Ni59 /Nb/Cu41Ni59 nanoscale thin film heterostructure is investigated, which exhibits a superconducting transition temperature, Tc, depending on the history of magnetic field applied parallel to the film plane. In more detail, around zero applied field, Tc is lower when the field is changed from negative to positive polarity (with respect to the cooling field), compared to the opposite case. We interpret this finding as the result of the generation of the odd-in-frequency triplet component of superconductivity arising at noncollinear orientation of the magnetizations in the Cu41Ni59 layer adjacent to the CoOx layer. This interpretation is supported by superconducting quantum interference device magnetometry, which revealed a correlation between details of the magnetic structure and the observed superconducting spin-valve effects. Readout of information is possible at zero applied field and, thus, no permanent field is required to stabilize both states. Consequently, this system represents a superconducting magnetic random access memory element for superconducting electronics. By applying increased transport currents, the system can be driven to the full switching mode between the completely superconducting and the normal state.

  3. Measurements of non-volatile aerosols with a VTDMA and their correlations with carbonaceous aerosols in Guangzhou, China

    Directory of Open Access Journals (Sweden)

    H. H. Y. Cheung

    2016-07-01

    Full Text Available Simultaneous measurements of aerosol volatility and carbonaceous matters were conducted at a suburban site in Guangzhou, China, in February and March 2014 using a volatility tandem differential mobility analyzer (VTDMA and an organic carbon/elemental carbon (OC ∕ EC analyzer. Low volatility (LV particles, with a volatility shrink factor (VSF at 300 °C exceeding 0.9, contributed 5 % of number concentrations of the 40 nm particles and 11–15 % of the 80–300 nm particles. They were composed of non-volatile material externally mixed with volatile material, and therefore did not evaporate significantly at 300 °C. Non-volatile material mixed internally with the volatile material was referred to as medium volatility (MV, 0.4  <  VSF  <  0.9 and high volatility (HV, VSF  <  0.4 particles. The MV and HV particles contributed 57–71 % of number concentration for the particles between 40 and 300 nm in size. The average EC and OC concentrations measured by the OC ∕ EC analyzer were 3.4 ± 3.0 and 9.0 ± 6.0 µg m−3, respectively. Non-volatile OC evaporating at 475 °C or above, together with EC, contributed 67 % of the total carbon mass. In spite of the daily maximum and minimum, the diurnal variations in the volume fractions of the volatile material, HV, MV and LV residuals were less than 15 % for the 80–300 nm particles. Back trajectory analysis also suggests that over 90 % of the air masses influencing the sampling site were well aged as they were transported at low altitudes (below 1500 m for over 40 h before arrival. Further comparison with the diurnal variations in the mass fractions of EC and the non-volatile OC in PM2.5 suggests that the non-volatile residuals may be related to both EC and non-volatile OC in the afternoon, during which the concentration of aged organics increased. A closure analysis of the total mass of LV and MV residuals and the mass of EC or the

  4. Organic ferroelectric opto-electronic memories

    NARCIS (Netherlands)

    Asadi, K.; Li, M.; Blom, P.W.M.; Kemerink, M.; Leeuw, D.M. de

    2011-01-01

    Memory is a prerequisite for many electronic devices. Organic non-volatile memory devices based on ferroelectricity are a promising approach towards the development of a low-cost memory technology based on a simple cross-bar array. In this review article we discuss the latest developments in this

  5. Computational complexity and memory usage for multi-frontal direct solvers used in p finite element analysis

    KAUST Repository

    Calo, Victor M.; Collier, Nathan; Pardo, David; Paszyński, Maciej R.

    2011-01-01

    The multi-frontal direct solver is the state of the art for the direct solution of linear systems. This paper provides computational complexity and memory usage estimates for the application of the multi-frontal direct solver algorithm on linear systems resulting from p finite elements. Specifically we provide the estimates for systems resulting from C0 polynomial spaces spanned by B-splines. The structured grid and uniform polynomial order used in isogeometric meshes simplifies the analysis.

  6. Computational complexity and memory usage for multi-frontal direct solvers used in p finite element analysis

    KAUST Repository

    Calo, Victor M.

    2011-05-14

    The multi-frontal direct solver is the state of the art for the direct solution of linear systems. This paper provides computational complexity and memory usage estimates for the application of the multi-frontal direct solver algorithm on linear systems resulting from p finite elements. Specifically we provide the estimates for systems resulting from C0 polynomial spaces spanned by B-splines. The structured grid and uniform polynomial order used in isogeometric meshes simplifies the analysis.

  7. Investigations of Photovoltaic Ferroelectric-Semiconductor Nonvolatile Memory.

    Science.gov (United States)

    1981-03-01

    HEWLETT-PACKARD BOX 3310 100 MARKET ST APT 1 3404 EAST HARMONY RD2U ATTN J. M. KIRSCH, MTS ATTN R. SCHAEFER ATTN L. W. JAMES, MTS FULLERTON, CA 92633...RADIO SYS SPERRY UNICORN 1300 S ROGERS 367 ORCHARD STREET 52-21 65 PL AT’rN J. F. PRATHER, MGR CEN ATTN I. A. PAULL, ES ATTN W. BURSTEIN, ENGR

  8. 1 Gb Radiation Hardened Nonvolatile Memory Development, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — The objective of this effort is to identify, characterize and develop advanced semiconductor materials and fabrication process techniques, and design and produce a...

  9. Reconfigurable Electronics and Non-Volatile Memory Research

    Science.gov (United States)

    2011-10-14

    October 2009. The films were etched off wafer pieces using a blend of sulfuric, nitric and hydrofluoric acids and diluted for analysis. Table 5...interactions. A weak peak is also seen around g = 1.98 which intensifies under light illumination. This peak can be assigned to the charge defects of base...evidence of amorphous/crystalline GST. It is not clear why significantly oxidized devices were capable of switching. Dr. Miotti theorized that

  10. Reconfigurable Magnetic Logic Combined with Nonvolatile Memory Writing

    KAUST Repository

    Luo, Zhaochu

    2016-11-16

    In the magnetic logic, four basic Boolean logic operations can be programmed by a magnetic bit at room temperature with a high output ratio (>103%). In the same clock cycle, benefiting from the built-in spin Hall effect, logic results can be directly written into magnetic bits using an all-electric method.

  11. Reconfigurable Electronics and Non-Volatile Memory Research

    Science.gov (United States)

    2015-11-10

    spectrophotometer tool uses film reflectance to calculate film thickness via a set of proprietary algorithms and a developed recipe for material type. The...tool can also be used to collect transmission spectra. Recipes must be developed for each film type (and stack) that is measured. Once the recipe has...Regner, J.K.; Balasubramanian, M; Cook , B.; Li, Y.; Kassayebetre, H. Sharma, A.; Baker, R.J.; Campbell, K.A., “Integration of IC Industry Feature

  12. Reconfigurable Magnetic Logic Combined with Nonvolatile Memory Writing

    KAUST Repository

    Luo, Zhaochu; Lu, Ziyao; Xiong, Chengyue; Zhu, Tao; Wu, Wei; Zhang, Qiang; Wu, Huaqiang; Zhang, Xixiang; Zhang, Xiaozhong

    2016-01-01

    In the magnetic logic, four basic Boolean logic operations can be programmed by a magnetic bit at room temperature with a high output ratio (>103%). In the same clock cycle, benefiting from the built-in spin Hall effect, logic results can be directly written into magnetic bits using an all-electric method.

  13. Multicolour fluorescent memory based on the interaction of hydroxy terphenyls with fluoride anions.

    Science.gov (United States)

    Akamatsu, Masaaki; Mori, Taizo; Okamoto, Ken; Sakai, Hideki; Abe, Masahiko; Hill, Jonathan P; Ariga, Katsuhiko

    2014-12-01

    Memory operations based on variation of a molecule's properties are important because they may lead to device miniaturization to the molecular scale or increasingly complex information processing protocols beyond the binary level. Molecular memory also introduces possibilities related to information-storage security where chemical information (or reagents) might be used as an encryption key, in this case, acidic/basic reagents. Chemical memory that possesses both volatile and non-volatile functionality requires reversible conversion between at least two chemically different stable or quasi-stable states. Here we have developed the phenol-phenoxide equilibrium of phenol fluorophores as a data storage element, which can be used to write or modulate data using chemical reagents. The properties of this system allow data to be stored and erased either in non-volatile or volatile modes. We also demonstrate non-binary switching of states made possible by preparation of  a composite containing the molecular memory elements. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Does computerized working memory training with game elements enhance motivation and training efficacy in children with ADHD?

    Science.gov (United States)

    Prins, Pier J M; Dovis, Sebastiaan; Ponsioen, Albert; ten Brink, Esther; van der Oord, Saskia

    2011-03-01

    This study examined the benefits of adding game elements to standard computerized working memory (WM) training. Specifically, it examined whether game elements would enhance motivation and training performance of children with ADHD, and whether it would improve training efficacy. A total of 51 children with ADHD aged between 7 and 12 years were randomly assigned to WM training in a gaming format or to regular WM training that was not in a gaming format. Both groups completed three weekly sessions of WM training. Children using the game version of the WM training showed greater motivation (i.e., more time training), better training performance (i.e., more sequences reproduced and fewer errors), and better WM (i.e., higher scores on a WM task) at post-training than children using the regular WM training. Results are discussed in terms of executive functions and reinforcement models of ADHD. It is concluded that WM training with game elements significantly improves the motivation, training performance, and working memory of children with ADHD. The findings of this study are encouraging and may have wide-reaching practical implications in terms of the role of game elements in the design and implementation of new intervention efforts for children with ADHD.

  15. Implementation of a finite element analysis procedure for structural analysis of shape memory behaviour of fibre reinforced shape memory polymer composites

    Science.gov (United States)

    Azzawi, Wessam Al; Epaarachchi, J. A.; Islam, Mainul; Leng, Jinsong

    2017-12-01

    Shape memory polymers (SMPs) offer a unique ability to undergo a substantial shape deformation and subsequently recover the original shape when exposed to a particular external stimulus. Comparatively low mechanical properties being the major drawback for extended use of SMPs in engineering applications. However the inclusion of reinforcing fibres in to SMPs improves mechanical properties significantly while retaining intrinsic shape memory effects. The implementation of shape memory polymer composites (SMPCs) in any engineering application is a unique task which requires profound materials and design optimization. However currently available analytical tools have critical limitations to undertake accurate analysis/simulations of SMPC structures and slower derestrict transformation of breakthrough research outcomes to real-life applications. Many finite element (FE) models have been presented. But majority of them require a complicated user-subroutines to integrate with standard FE software packages. Furthermore, those subroutines are problem specific and difficult to use for a wider range of SMPC materials and related structures. This paper presents a FE simulation technique to model the thermomechanical behaviour of the SMPCs using commercial FE software ABAQUS. Proposed technique incorporates material time-dependent viscoelastic behaviour. The ability of the proposed technique to predict the shape fixity and shape recovery was evaluated by experimental data acquired by a bending of a SMPC cantilever beam. The excellent correlation between the experimental and FE simulation results has confirmed the robustness of the proposed technique.

  16. Using the false memory paradigm to test two key elements of alcohol expectancy theory.

    Science.gov (United States)

    Reich, Richard R; Goldman, Mark S; Noll, Jane A

    2004-05-01

    Two key aspects of alcohol expectancy theory--(a) that memories about alcohol effects are stored as relatively cohesive templates of information and (b) that these templates are automatically activated in alcohol-related contexts--were tested using the Deese-Roediger- McDermott false memory paradigm. Alcohol expectancy adjectives were studied, and false memory for expectancy target words was tested in neutral and alcohol contexts. Results indicated that in the alcohol context heavier drinkers showed more false memory for alcohol expectancy words than they did in a neutral context. Differences were not found for lighter drinkers. These results were consistent with alcohol expectancy theory, which was then compared with various forms of association theory in explaining these results and larger issues in the addiction field. ((c) 2004 APA, all rights reserved)

  17. LDRD Final Report - Investigations of the impact of the process integration of deposited magnetic films for magnetic memory technologies on radiation hardened CMOS devices and circuits - LDRD Project (FY99)

    International Nuclear Information System (INIS)

    Myers, David R.; Jessing, Jeffrey R.; Spahn, Olga B.; Shaneyfelt, Marty R.

    2000-01-01

    This project represented a coordinated LLNL-SNL collaboration to investigate the feasibility of developing radiation-hardened magnetic non-volatile memories using giant magnetoresistance (GMR) materials. The intent of this limited-duration study was to investigate whether giant magnetoresistance (GMR) materials similar to those used for magnetic tunnel junctions (MTJs) were process compatible with functioning CMOS circuits. Sandia's work on this project demonstrated that deposition of GMR materials did not affect the operation nor the radiation hardness of Sandia's rad-hard CMOS technology, nor did the integration of GMR materials and exposure to ionizing radiation affect the magnetic properties of the GMR films. Thus, following deposition of GMR films on rad-hard integrated circuits, both the circuits and the films survived ionizing radiation levels consistent with DOE mission requirements. Furthermore, Sandia developed techniques to pattern deposited GMR films without degrading the completed integrated circuits upon which they were deposited. The present feasibility study demonstrated all the necessary processing elements to allow fabrication of the non-volatile memory elements onto an existing CMOS chip, and even allow the use of embedded (on-chip) non-volatile memories for system-on-a-chip applications, even in demanding radiation environments. However, funding agencies DTRA, AIM, and DARPA did not have any funds available to support the required follow-on technology development projects that would have been required to develop functioning prototype circuits, nor were such funds available from LDRD nor from other DOE program funds

  18. Low Cost Writeable RFID Tag With MRAM Memory

    National Research Council Canada - National Science Library

    Beech, Russell

    1998-01-01

    This program's goal was to develop a writeable RFID tag using an integrated, permeable core coil as the inductor/antenna for communication and power transfer and MRAM as the low write energy, nonvolatile memory...

  19. Space Qualified, Radiation Hardened, Dense Monolithic Flash Memory, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Radiation hardened nonvolatile memories for space is still primarily confined to EEPROM. There is high density effective or cost effective NVM solution available to...

  20. Phase change memory

    CERN Document Server

    Qureshi, Moinuddin K

    2011-01-01

    As conventional memory technologies such as DRAM and Flash run into scaling challenges, architects and system designers are forced to look at alternative technologies for building future computer systems. This synthesis lecture begins by listing the requirements for a next generation memory technology and briefly surveys the landscape of novel non-volatile memories. Among these, Phase Change Memory (PCM) is emerging as a leading contender, and the authors discuss the material, device, and circuit advances underlying this exciting technology. The lecture then describes architectural solutions t

  1. Influence of alloying elements on the corrosion properties of shape memory stainless steels

    International Nuclear Information System (INIS)

    Della Rovere, C.A.; Alano, J.H.; Silva, R.; Nascente, P.A.P.; Otubo, J.; Kuri, S.E.

    2012-01-01

    Highlights: ► The corrosion properties of three Fe–Mn–Si–Cr–Ni–(Co) shape-memory stainless steels (SMSSs) were compared with those of a type 304 (SS 304) austenitic stainless steel. ► A considerably high Si content (about 40 at%) is present in the anodic passive films formed on SMSSs in 0.5 M H 2 SO 4 solution. ► The high protectiveness of the anodic passive film formed on SMSSs in 0.5 M H 2 SO 4 solution results from a protective film consisting of a (Fe, Cr)–mixed silicate. ► The SMSSs exhibited higher corrosion resistance than SS 304 in highly oxidizing environments. ► The SMSSs showed poor corrosion resistance in 3.5% NaCl solution compared to that of SS 304. - Abstract: The corrosion properties of three Fe–Mn–Si–Cr–Ni–(Co) shape memory stainless steels were studied based on X-ray photoelectron spectroscopy (XPS) analyses, immersion and polarization tests. The test results were compared with those of a type 304 austenitic stainless steel. The XPS analyses indicated substantial Si content in the anodic passive films formed on shape memory stainless steels in sulfuric acid solution and that the high protectiveness of these films results from a protective film consisting of a (iron, chromium)–mixed silicate. The corrosion rate of the shape memory stainless steels in boiling nitric acid solution was lower than that of austenitic stainless steel. The high silicon content was found to play an important role in the corrosion behavior of these shape memory alloys in highly oxidizing environments. Due to their high manganese content, the shape memory stainless steels showed poor corrosion behavior in 3.5% sodium chloride solution when compared with austenitic stainless steel.

  2. Feasibility and limitations of anti-fuses based on bistable non-volatile switches for power electronic applications

    Science.gov (United States)

    Erlbacher, T.; Huerner, A.; Bauer, A. J.; Frey, L.

    2012-09-01

    Anti-fuse devices based on non-volatile memory cells and suitable for power electronic applications are demonstrated for the first time using silicon technology. These devices may be applied as stand alone devices or integrated using standard junction-isolation into application-specific and smart-power integrated circuits. The on-resistance of such devices can be permanently switched by nine orders of magnitude by triggering the anti-fuse with a positive voltage pulse. Extrapolation of measurement data and 2D TCAD process and device simulations indicate that 20 A anti-fuses with 10 mΩ can be reliably fabricated in 0.35 μm technology with a footprint of 2.5 mm2. Moreover, this concept offers distinguished added-values compared to existing mechanical relays, e.g. pre-test, temporary and permanent reset functions, gradual turn-on mode, non-volatility, and extendibility to high voltage capability.

  3. Ferroelectric polymer gates for non-volatile field effect control of ferromagnetism in (Ga, Mn)As layers

    International Nuclear Information System (INIS)

    Stolichnov, I; Riester, S W E; Mikheev, E; Setter, N; Rushforth, A W; Edmonds, K W; Campion, R P; Foxon, C T; Gallagher, B L; Jungwirth, T; Trodahl, H J

    2011-01-01

    (Ga, Mn)As and other diluted magnetic semiconductors (DMS) attract a great deal of attention for potential spintronic applications because of the possibility of controlling the magnetic properties via electrical gating. Integration of a ferroelectric gate on the DMS channel adds to the system a non-volatile memory functionality and permits nanopatterning via the polarization domain engineering. This topical review is focused on the multiferroic system, where the ferromagnetism in the (Ga, Mn)As DMS channel is controlled by the non-volatile field effect of the spontaneous polarization. Use of ferroelectric polymer gates in such heterostructures offers a viable alternative to the traditional oxide ferroelectrics generally incompatible with DMS. Here we review the proof-of-concept experiments demonstrating the ferroelectric control of ferromagnetism, analyze the performance issues of the ferroelectric gates and discuss prospects for further development of the ferroelectric/DMS heterostructures toward the multiferroic field effect transistor. (topical review)

  4. Memory

    OpenAIRE

    Wager, Nadia

    2017-01-01

    This chapter will explore a response to traumatic victimisation which has divided the opinions of psychologists at an exponential rate. We will be examining amnesia for memories of childhood sexual abuse and the potential to recover these memories in adulthood. Whilst this phenomenon is generally accepted in clinical circles, it is seen as highly contentious amongst research psychologists, particularly experimental cognitive psychologists. The chapter will begin with a real case study of a wo...

  5. The memory effect of a pentacene field-effect transistor with a polarizable gate dielectric

    Science.gov (United States)

    Unni, K. N. N.; de Bettignies, Remi; Dabos-Seignon, Sylvie; Nunzi, Jean-Michel

    2004-06-01

    The nonvolatile transistor memory element is an interesting topic in organic electronics. In this case a memory cell consists of only one device where the stored information is written as a gate insulator polarization by a gate voltage pulse and read by the channel conductance control with channel voltage pulse without destruction of the stored information. Therefore such transistor could be the base of non-volatile non-destructively readable computer memory of extremely high density. Also devices with polarizable gate dielectrics can function more effectively in certain circuits. The effective threshold voltage Vt can be brought very close to zero, for applications where the available gate voltage is limited. Resonant and adaptive circuits can be tuned insitu by polarizing the gates. Poly(vinylidene fluoride), PVDF and its copolymer with trifluoroethylene P(VDF-TrFE) are among the best known and most widely used ferroelectric polymers. In this manuscript, we report new results of an organic FET, fabricated with pentacene as the active material and P(VDF-TrFE) as the gate insulator. Application of a writing voltage of -50 V for short duration results in significant change in the threshold voltage and remarkable increase in the drain current. The memory effect is retained over a period of 20 hours.

  6. An investigation of shape memory alloys as actuating elements in aerospace morphing applications

    DEFF Research Database (Denmark)

    Karagiannis, Dimitrios; Stamatelos, Dimtrios; Kappatos, Vasileios

    2017-01-01

    Two innovative actuating concepts for aerospace morphing applications, based on Shape Memory Alloys (SMAs), are proposed. The first concept investigates a composite plate incorporating embedded SMA wires. A Nonlinear Auto Regressive with eXogenous excitation (NARX) model is proposed for controlling...

  7. Separate elements of episodic memory subserved by distinct hippocampal-prefrontal connections.

    Science.gov (United States)

    Barker, Gareth R I; Banks, Paul J; Scott, Hannah; Ralph, G Scott; Mitrophanous, Kyriacos A; Wong, Liang-Fong; Bashir, Zafar I; Uney, James B; Warburton, E Clea

    2017-02-01

    Episodic memory formation depends on information about a stimulus being integrated within a precise spatial and temporal context, a process dependent on the hippocampus and prefrontal cortex. Investigations of putative functional interactions between these regions are complicated by multiple direct and indirect hippocampal-prefrontal connections. Here application of a pharmacogenetic deactivation technique enabled us to investigate the mnemonic contributions of two direct hippocampal-medial prefrontal cortex (mPFC) pathways, one arising in the dorsal CA1 (dCA1) and the other in the intermediate CA1 (iCA1). While deactivation of either pathway impaired episodic memory, the resulting pattern of mnemonic deficits was different: deactivation of the dCA1→mPFC pathway selectively disrupted temporal order judgments while iCA1→mPFC pathway deactivation disrupted spatial memory. These findings reveal a previously unsuspected division of function among CA1 neurons that project directly to the mPFC. Such subnetworks may enable the distinctiveness of contextual information to be maintained in an episodic memory circuit.

  8. Explicit time integration of finite element models on a vectorized, concurrent computer with shared memory

    Science.gov (United States)

    Gilbertsen, Noreen D.; Belytschko, Ted

    1990-01-01

    The implementation of a nonlinear explicit program on a vectorized, concurrent computer with shared memory is described and studied. The conflict between vectorization and concurrency is described and some guidelines are given for optimal block sizes. Several example problems are summarized to illustrate the types of speed-ups which can be achieved by reprogramming as compared to compiler optimization.

  9. Hybrid superconducting-magnetic memory device using competing order parameters.

    Science.gov (United States)

    Baek, Burm; Rippard, William H; Benz, Samuel P; Russek, Stephen E; Dresselhaus, Paul D

    2014-05-28

    In a hybrid superconducting-magnetic device, two order parameters compete, with one type of order suppressing the other. Recent interest in ultra-low-power, high-density cryogenic memories has spurred new efforts to simultaneously exploit superconducting and magnetic properties so as to create novel switching elements having these two competing orders. Here we describe a reconfigurable two-layer magnetic spin valve integrated within a Josephson junction. Our measurements separate the suppression in the superconducting coupling due to the exchange field in the magnetic layers, which causes depairing of the supercurrent, from the suppression due to the stray magnetic field. The exchange field suppression of the superconducting order parameter is a tunable and switchable behaviour that is also scalable to nanometer device dimensions. These devices demonstrate non-volatile, size-independent switching of Josephson coupling, in magnitude as well as phase, and they may enable practical nanoscale superconducting memory devices.

  10. Identification of nonvolatile compounds in clove (Syzygium aromaticum) from Manado

    Science.gov (United States)

    Fathoni, A.; Saepudin, E.; Cahyana, A. H.; Rahayu, D. U. C.; Haib, J.

    2017-07-01

    Syzygium aromaticum (clove) are native to Indonesia and have been widely used in food industry due to their flavor. Nonvolatile compounds contribute to flavor, mainly in their taste. Currently, there is very little information available about nonvolatile compounds in clove. Identification of nonvolatile compounds is important to improve clove's value. Compound extraction was conducted by maceration in ethanol. Fractionations of the extract were performed by using gravity column chromatography on silica gel and Sephadex LH-20 as stationary phase. Nonvolatile compounds were identified by Liquid Chromatography-Tandem Mass Spectrometry (LC-MS/MS). LC-MS/MS was operated in negative mode with 0.1 % formic acid in water and acetonitrile as mobile phase. Nonvolatile compounds were identified by fragment analysis and compared to references. Several compounds had been identified and characterized asquinic acid, monogalloylglucose, gallic acid, digalloylglucose, isobiflorin, biflorin, ellagic acid, hydroxygallic acid, luteolin, quercetin, naringenin, kaempferol, isorhamnetin, dimethoxyluteolin, and rhamnetin. These compounds had two main flavor perceptions, i.e. astringent, and bitter.

  11. Contribution of Shape Memory Alloys Elements in Designing Underwater Smart Structures

    Directory of Open Access Journals (Sweden)

    Daniel Amariei

    2007-10-01

    Full Text Available Shape memory alloys (SMA have generated a lot of new ideas in engineering. Application is however so far limited to clamps and springs. With respect to smart structures sensing as well as control has to be included. While sensing looks to be relatively feasible control is the big challenge. This paper describes some related a smart structure idea using SMAs and discusses the challenges which need to be solved before these ideas can be realised.

  12. InAs quantum dots as charge storing elements for applications in flash memory devices

    Energy Technology Data Exchange (ETDEWEB)

    Islam, Sk Masiul; Biswas, Pranab [Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302 (India); Banerji, P., E-mail: pallab@matsc.iitkgp.ernet.in [Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302 (India); Chakraborty, S. [Applied Materials Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Sector-I, Kolkata 700 064 (India)

    2015-08-15

    Graphical abstract: - Highlights: • Catalyst-free growth of InAs quantum dots was carried out on high-k ZrO{sub 2}. • Memory device with InAs quantum dots as charge storage nodes are fabricated. • Superior memory window, low leakage and reasonably good retention were observed. • Carrier transport phenomena are explained in both program and erase operations. - Abstract: InAs quantum dots (QDs) were grown by metal organic chemical vapor deposition technique to use them as charge storage nodes. Uniform QDs were formed with average diameter 5 nm and height 5–10 nm with a density of 2 × 10{sup 11} cm{sup −2}. The QDs were grown on high-k dielectric layer (ZrO{sub 2}), which was deposited onto ultra-thin GaP passivated p-GaAs (1 0 0) substrate. A charge storage device with the structure Metal/ZrO{sub 2}/InAs QDs/ZrO{sub 2}/(GaP)GaAs/Metal was fabricated. The devices containing InAs QDs exhibit superior memory window, low leakage current density along with reasonably good charge retention. A suitable electronic band diagram corresponding to programming and erasing operations was proposed to explain the operation.

  13. Memories.

    Science.gov (United States)

    Brand, Judith, Ed.

    1998-01-01

    This theme issue of the journal "Exploring" covers the topic of "memories" and describes an exhibition at San Francisco's Exploratorium that ran from May 22, 1998 through January 1999 and that contained over 40 hands-on exhibits, demonstrations, artworks, images, sounds, smells, and tastes that demonstrated and depicted the biological,…

  14. Two-dimensional non-volatile programmable p-n junctions

    Science.gov (United States)

    Li, Dong; Chen, Mingyuan; Sun, Zhengzong; Yu, Peng; Liu, Zheng; Ajayan, Pulickel M.; Zhang, Zengxing

    2017-09-01

    Semiconductor p-n junctions are the elementary building blocks of most electronic and optoelectronic devices. The need for their miniaturization has fuelled the rapid growth of interest in two-dimensional (2D) materials. However, the performance of a p-n junction considerably degrades as its thickness approaches a few nanometres and traditional technologies, such as doping and implantation, become invalid at the nanoscale. Here we report stable non-volatile programmable p-n junctions fabricated from the vertically stacked all-2D semiconductor/insulator/metal layers (WSe2/hexagonal boron nitride/graphene) in a semifloating gate field-effect transistor configuration. The junction exhibits a good rectifying behaviour with a rectification ratio of 104 and photovoltaic properties with a power conversion efficiency up to 4.1% under a 6.8 nW light. Based on the non-volatile programmable properties controlled by gate voltages, the 2D p-n junctions have been exploited for various electronic and optoelectronic applications, such as memories, photovoltaics, logic rectifiers and logic optoelectronic circuits.

  15. High user control in game design elements increases compliance and in-game performance in a memory training game

    Directory of Open Access Journals (Sweden)

    Aniket eNagle

    2015-11-01

    Full Text Available Computer games are increasingly being used for training cognitive functions like working memory and attention among the growing population of older adults. While cognitive training games often include elements like difficulty adaptation, rewards, and visual themes to make the games more enjoyable and effective, the effect of different degrees of afforded user control in manipulating these elements has not been systematically studied. To address this issue, two distinct implementations of the three aforementioned game elements were tested among healthy older adults (N = 21, 69.9 ± 6.4 years old playing a game-like version of the n-back task on a tablet at home for three weeks. Two modes were considered, differentiated by the afforded degree of user control of the three elements: user control of difficulty vs. automatic difficulty adaptation, difficulty-dependent rewards vs. automatic feedback messages, and user choice of visual theme vs. no choice. The two modes (USER-CONTROL and AUTO were compared for frequency of play, duration of play, and performance. Participants were free to play the game whenever and for however long they wished. Participants in USER-CONTROL exhibited significantly higher frequency of playing, total play duration, and performance than participants in AUTO. The results of the present study demonstrate the efficacy of providing user control in the three game elements, while validating a home-based study design in which participants were not bound by any training regimen, and could play the game whenever they wished. The results have implications for designing cognitive training games that elicit higher compliance and better performance, with an emphasis on home-based training.

  16. High User Control in Game Design Elements Increases Compliance and In-game Performance in a Memory Training Game

    Science.gov (United States)

    Nagle, Aniket; Riener, Robert; Wolf, Peter

    2015-01-01

    Computer games are increasingly being used for training cognitive functions like working memory and attention among the growing population of older adults. While cognitive training games often include elements like difficulty adaptation, rewards, and visual themes to make the games more enjoyable and effective, the effect of different degrees of afforded user control in manipulating these elements has not been systematically studied. To address this issue, two distinct implementations of the three aforementioned game elements were tested among healthy older adults (N = 21, 69.9 ± 6.4 years old) playing a game-like version of the n-back task on a tablet at home for 3 weeks. Two modes were considered, differentiated by the afforded degree of user control of the three elements: user control of difficulty vs. automatic difficulty adaptation, difficulty-dependent rewards vs. automatic feedback messages, and user choice of visual theme vs. no choice. The two modes (“USER-CONTROL” and “AUTO”) were compared for frequency of play, duration of play, and in-game performance. Participants were free to play the game whenever and for however long they wished. Participants in USER-CONTROL exhibited significantly higher frequency of playing, total play duration, and in-game performance than participants in AUTO. The results of the present study demonstrate the efficacy of providing user control in the three game elements, while validating a home-based study design in which participants were not bound by any training regimen, and could play the game whenever they wished. The results have implications for designing cognitive training games that elicit higher compliance and better in-game performance, with an emphasis on home-based training. PMID:26635681

  17. High User Control in Game Design Elements Increases Compliance and In-game Performance in a Memory Training Game.

    Science.gov (United States)

    Nagle, Aniket; Riener, Robert; Wolf, Peter

    2015-01-01

    Computer games are increasingly being used for training cognitive functions like working memory and attention among the growing population of older adults. While cognitive training games often include elements like difficulty adaptation, rewards, and visual themes to make the games more enjoyable and effective, the effect of different degrees of afforded user control in manipulating these elements has not been systematically studied. To address this issue, two distinct implementations of the three aforementioned game elements were tested among healthy older adults (N = 21, 69.9 ± 6.4 years old) playing a game-like version of the n-back task on a tablet at home for 3 weeks. Two modes were considered, differentiated by the afforded degree of user control of the three elements: user control of difficulty vs. automatic difficulty adaptation, difficulty-dependent rewards vs. automatic feedback messages, and user choice of visual theme vs. no choice. The two modes ("USER-CONTROL" and "AUTO") were compared for frequency of play, duration of play, and in-game performance. Participants were free to play the game whenever and for however long they wished. Participants in USER-CONTROL exhibited significantly higher frequency of playing, total play duration, and in-game performance than participants in AUTO. The results of the present study demonstrate the efficacy of providing user control in the three game elements, while validating a home-based study design in which participants were not bound by any training regimen, and could play the game whenever they wished. The results have implications for designing cognitive training games that elicit higher compliance and better in-game performance, with an emphasis on home-based training.

  18. A non-destructive crossbar architecture of multi-level memory-based resistor

    Science.gov (United States)

    Sahebkarkhorasani, Seyedmorteza

    Nowadays, researchers are trying to shrink the memory cell in order to increase the capacity of the memory system and reduce the hardware costs. In recent years, there has been a revolution in electronics by using fundamentals of physics to build a new memory for computer application in order to increase the capacity and decrease the power consumption. Increasing the capacity of the memory causes a growth in the chip area. From 1971 to 2012 semiconductor manufacturing process improved from 6mum to 22 mum. In May 2008, S.Williams stated that "it is time to stop shrinking". In his paper, he declared that the process of shrinking memory element has recently become very slow and it is time to use another alternative in order to create memory elements [9]. In this project, we present a new design of a memory array using the new element named Memristor [3]. Memristor is a two-terminal passive electrical element that relates the charge and magnetic flux to each other. The device remained unknown since 1971 when it was discovered by Chua and introduced as the fourth fundamental passive element like capacitor, inductor and resistor [3]. Memristor has a dynamic resistance and it can retain its previous value even after disconnecting the power supply. Due to this interesting behavior of the Memristor, it can be a good replacement for all of the Non-Volatile Memories (NVMs) in the near future. Combination of this newly introduced element with the nanowire crossbar architecture would be a great structure which is called Crossbar Memristor. Some frameworks have recently been introduced in literature that utilized Memristor crossbar array, but there are many challenges to implement the Memristor crossbar array due to fabrication and device limitations. In this work, we proposed a simple design of Memristor crossbar array architecture which uses input feedback in order to preserve its data after each read operation.

  19. Anisotropic sensor and memory device with a ferromagnetic tunnel barrier as the only magnetic element.

    Science.gov (United States)

    Lόpez-Mir, L; Frontera, C; Aramberri, H; Bouzehouane, K; Cisneros-Fernández, J; Bozzo, B; Balcells, L; Martínez, B

    2018-01-16

    Multiple spin functionalities are probed on Pt/La 2 Co 0.8 Mn 1.2 O 6 /Nb:SrTiO 3 , a device composed by a ferromagnetic insulating barrier sandwiched between non-magnetic electrodes. Uniquely, La 2 Co 0.8 Mn 1.2 O 6 thin films present strong perpendicular magnetic anisotropy of magnetocrystalline origin, property of major interest for spintronics. The junction has an estimated spin-filtering efficiency of 99.7% and tunneling anisotropic magnetoresistance (TAMR) values up to 30% at low temperatures. This remarkable angular dependence of the magnetoresistance is associated with the magnetic anisotropy whose origin lies in the large spin-orbit interaction of Co 2+ which is additionally tuned by the strain of the crystal lattice. Furthermore, we found that the junction can operate as an electrically readable magnetic memory device. The findings of this work demonstrate that a single ferromagnetic insulating barrier with strong magnetocrystalline anisotropy is sufficient for realizing sensor and memory functionalities in a tunneling device based on TAMR.

  20. Characteristics of a non-volatile liquid propellant in liquid-fed ablative pulsed plasma thrusters

    Science.gov (United States)

    Ling, William Yeong Liang; Schönherr, Tony; Koizumi, Hiroyuki

    2017-02-01

    In the past several decades, the use of electric propulsion in spacecraft has experienced tremendous growth. With the increasing adoption of small satellites in the kilogram range, suitable propulsion systems will be necessary in the near future. Pulsed plasma thrusters (PPTs) were the first form of electric propulsion to be deployed in orbit, and are highly suitable for small satellites due to their inherent simplicity. However, their lifetime is limited by disadvantages such as carbon deposition leading to thruster failure, and complicated feeding systems required due to the conventional use of solid propellants (usually polytetrafluoroethylene (PTFE)). A promising alternative to solid propellants has recently emerged in the form of non-volatile liquids that are stable in vacuum. This study presents a broad comparison of the non-volatile liquid perfluoropolyether (PFPE) and solid PTFE as propellants on a PPT with a common design base. We show that liquid PFPE can be successfully used as a propellant, and exhibits similar plasma discharge properties to conventional solid PTFE, but with a mass bit that is an order of magnitude higher for an identical ablation area. We also demonstrate that the liquid PFPE propellant has exceptional resistance to carbon deposition, completely negating one of the major causes of thruster failure, while solid PTFE exhibited considerable carbon build-up. Energy dispersive X-ray spectroscopy was used to examine the elemental compositions of the surface deposition on the electrodes and the ablation area of the propellant (or PFPE encapsulator). The results show that based on its physical characteristics and behavior, non-volatile liquid PFPE is an extremely promising propellant for use in PPTs, with an extensive scope available for future research and development.

  1. Efficient Management for Hybrid Memory in Managed Language Runtime

    OpenAIRE

    Wang , Chenxi; Cao , Ting; Zigman , John; Lv , Fang; Zhang , Yunquan; Feng , Xiaobing

    2016-01-01

    Part 1: Memory: Non-Volatile, Solid State Drives, Hybrid Systems; International audience; Hybrid memory, which leverages the benefits of traditional DRAM and emerging memory technologies, is a promising alternative for future main memory design. However popular management policies through memory-access recording and page migration may invoke non-trivial overhead in execution time and hardware space. Nowadays, managed language applications are increasingly dominant in every kind of platform. M...

  2. Size distributions of non-volatile particle residuals (Dp<800 nm at a rural site in Germany and relation to air mass origin

    Directory of Open Access Journals (Sweden)

    T. Tuch

    2007-11-01

    Full Text Available Atmospheric aerosol particle size distributions at a continental background site in Eastern Germany were examined for a one-year period. Particles were classified using a twin differential mobility particle sizer in a size range between 3 and 800 nm. As a novelty, every second measurement of this experiment involved the removal of volatile chemical compounds in a thermodenuder at 300°C. This concept allowed to quantify the number size distribution of non-volatile particle cores – primarily associated with elemental carbon, and to compare this to the original non-conditioned size distribution. As a byproduct of the volatility analysis, new particles originating from nucleation inside the thermodenuder can be observed, however, overwhelmingly at diameters below 6 nm. Within the measurement uncertainty, every particle down to particle sizes of 15 nm is concluded to contain a non-volatile core. The volume fraction of non-volatile particulate matter (non-conditioned diameter < 800 nm varied between 10 and 30% and was largely consistent with the experimentally determined mass fraction of elemental carbon. The average size of the non-volatile particle cores was estimated as a function of original non-conditioned size using a summation method, which showed that larger particles (>200 nm contained more non-volatile compounds than smaller particles (<50 nm, thus indicating a significantly different chemical composition. Two alternative air mass classification schemes based on either, synoptic chart analysis (Berliner Wetterkarte or back trajectories showed that the volume and number fraction of non-volatile cores depended less on air mass than the total particle number concentration. In all air masses, the non-volatile size distributions showed a more and a less volatile ("soot" mode, the latter being located at about 50 nm. During unstable conditions and in maritime air masses, smaller values were observed compared to stable or continental conditions

  3. Electric Field Tuning Non-volatile Magnetism in Half-Metallic Alloys Co2FeAl/Pb(Mg1/3Nb2/3)O3-PbTiO3 Heterostructure

    Science.gov (United States)

    Dunzhu, Gesang; Wang, Fenglong; Zhou, Cai; Jiang, Changjun

    2018-03-01

    We reported the non-volatile electric field-mediated magnetic properties in the half-metallic Heusler alloy Co2FeAl/Pb(Mg1/3Nb2/3)O3-PbTiO3 heterostructure at room temperature. The remanent magnetization with different applied electric field along [100] and [01-1] directions was achieved, which showed the non-volatile remanent magnetization driven by an electric field. The two giant reversible and stable remanent magnetization states were obtained by applying pulsed electric field. This can be attributed to the piezostrain effect originating from the piezoelectric substrate, which can be used for magnetoelectric-based memory devices.

  4. Accessing Information in Working Memory: Can the Focus of Attention Grasp Two Elements at the Same Time?

    Science.gov (United States)

    Oberauer, Klaus; Bialkova, Svetlana

    2009-01-01

    Processing information in working memory requires selective access to a subset of working-memory contents by a focus of attention. Complex cognition often requires joint access to 2 items in working memory. How does the focus select 2 items? Two experiments with an arithmetic task and 1 with a spatial task investigate time demands for successive…

  5. Accessing information in working memory: Can the focus of attention grasp two elements at the same time?

    NARCIS (Netherlands)

    Oberauer, K.; Bialkova, S.E.

    2009-01-01

    Processing information in working memory requires selective access to a subset of working-memory contents by a focus of attention. Complex cognition often requires joint access to 2 items in working memory. How does the focus select 2 items? Two experiments with an arithmetic task and 1 with a

  6. Rescue of cAMP response element-binding protein signaling reversed spatial memory retention impairments induced by subanesthetic dose of propofol.

    Science.gov (United States)

    Zhang, Hao; Zhang, Shao-Bo; Zhang, Qing-Qing; Liu, Meng; He, Xing-Ying; Zou, Zui; Sun, Hai-Jing; You, Zhen-Dong; Shi, Xue-Yin

    2013-07-01

    The intravenous anesthetic propofol caused episodic memory impairments in human. We hypothesized propofol caused episodic-like spatial memory retention but not acquisition impairments in rats and rescuing cAMP response element-binding protein (CREB) signaling using selective type IV phosphodiesterase (PDEIV) inhibitor rolipram reversed these effects. Male Sprague-Dawley rats were randomized into four groups: control; propofol (25 mg/kg, intraperitoneal); rolipram; and rolipram + propofol (pretreatment of rolipram 25 min before propofol, 0.3 mg/kg, intraperitoneal). Sedation and motor coordination were evaluated 5, 15, and 25 min after propofol injection. Invisible Morris water maze (MWM) acquisition and probe test (memory retention) were performed 5 min and 24 h after propofol injection. Visible MWM training was simultaneously performed to resist nonspatial effects. Hippocampal CREB signaling was detected 5 min, 50 min, and 24 h after propofol administration. Rolipram did not change propofol-induced anesthetic/sedative states or impair motor skills. No difference was found on the latency to the platform during the visible MWM. Propofol impaired spatial memory retention but not acquisition. Rolipram reversed propofol-induced spatial memory impairments and suppression on cAMP levels, CaMKIIα and CREB phosphorylation, brain-derived neurotropic factor (BDNF) and Arc protein expression. Propofol caused spatial memory retention impairments but not acquisition inability possibly by inhibiting CREB signaling. © 2013 John Wiley & Sons Ltd.

  7. Design of a magnetic-tunnel-junction-oriented nonvolatile lookup table circuit with write-operation-minimized data shifting

    Science.gov (United States)

    Suzuki, Daisuke; Hanyu, Takahiro

    2018-04-01

    A magnetic-tunnel-junction (MTJ)-oriented nonvolatile lookup table (LUT) circuit, in which a low-power data-shift function is performed by minimizing the number of write operations in MTJ devices is proposed. The permutation of the configuration memory cell for read/write access is performed as opposed to conventional direct data shifting to minimize the number of write operations, which results in significant write energy savings in the data-shift function. Moreover, the hardware cost of the proposed LUT circuit is small since the selector is shared between read access and write access. In fact, the power consumption in the data-shift function and the transistor count are reduced by 82 and 52%, respectively, compared with those in a conventional static random-access memory-based implementation using a 90 nm CMOS technology.

  8. Uncorrelated multiple conductive filament nucleation and rupture in ultra-thin high-κ dielectric based resistive random access memory

    KAUST Repository

    Wu, Xing; Li, Kun; Raghavan, Nagarajan; Bosman, Michel; Wang, Qing-Xiao; Cha, Dong Kyu; Zhang, Xixiang; Pey, Kin-Leong

    2011-01-01

    Resistive switching in transition metal oxides could form the basis for next-generation non-volatile memory (NVM). It has been reported that the current in the high-conductivity state of several technologically relevant oxide materials flows through

  9. Nonvolatile field effect transistors based on protons and Si/SiO2Si structures

    International Nuclear Information System (INIS)

    Warren, W.L.; Vanheusden, K.; Fleetwood, D.M.; Schwank, J.R.; Winokur, P.S.; Knoll, M.G.; Devine, R.A.B.

    1997-01-01

    Recently, the authors have demonstrated that annealing Si/SiO 2 /Si structures in a hydrogen containing ambient introduces mobile H + ions into the buried SiO 2 layer. Changes in the H + spatial distribution within the SiO 2 layer were electrically monitored by current-voltage (I-V) measurements. The ability to directly probe reversible protonic motion in Si/SiO 2 /Si structures makes this an exemplar system to explore the physics and chemistry of hydrogen in the technologically relevant Si/SiO 2 structure. In this work, they illustrate that this effect can be used as the basis for a programmable nonvolatile field effect transistor (NVFET) memory that may compete with other Si-based memory devices. The power of this novel device is its simplicity; it is based upon standard Si/SiO 2 /Si technology and forming gas annealing, a common treatment used in integrated circuit processing. They also briefly discuss the effects of radiation on its retention properties

  10. Atomic crystals resistive switching memory

    International Nuclear Information System (INIS)

    Liu Chunsen; Zhang David Wei; Zhou Peng

    2017-01-01

    Facing the growing data storage and computing demands, a high accessing speed memory with low power and non-volatile character is urgently needed. Resistive access random memory with 4F 2 cell size, switching in sub-nanosecond, cycling endurances of over 10 12 cycles, and information retention exceeding 10 years, is considered as promising next-generation non-volatile memory. However, the energy per bit is still too high to compete against static random access memory and dynamic random access memory. The sneak leakage path and metal film sheet resistance issues hinder the further scaling down. The variation of resistance between different devices and even various cycles in the same device, hold resistive access random memory back from commercialization. The emerging of atomic crystals, possessing fine interface without dangling bonds in low dimension, can provide atomic level solutions for the obsessional issues. Moreover, the unique properties of atomic crystals also enable new type resistive switching memories, which provide a brand-new direction for the resistive access random memory. (topical reviews)

  11. A finite element analysis of the morphology of the twinned-to-detwinned interface observed in microstructure of the Cu-Al-Ni shape memory alloy

    Czech Academy of Sciences Publication Activity Database

    Seiner, Hanuš; Glatz, O.; Landa, Michal

    2011-01-01

    Roč. 48, č. 13 (2011), s. 2005-2014 ISSN 0020-7683 R&D Projects: GA ČR(CZ) GP202/09/P164; GA MŠk(CZ) 1M06031 Institutional research plan: CEZ:AV0Z20760514 Keywords : shape- memory alloys * finite element method * microstructure * energy minimization Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.857, year: 2011 http://www.sciencedirect.com/science/article/pii/S002076831100103X

  12. Dielectric relaxation dependent memory elements in pentacene/[6,6]-phenyl-C61-butyric acid methyl ester bi-layer field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Park, Byoungnam

    2015-03-02

    We fabricate a pentacene/[6,6]-phenyl-C{sub 61}-butyric acid methyl ester (PCBM) bi-layer field effect transistor (FET) featuring large hysteresis that can be used as memory elements. Intentional introduction of excess electron traps in a PCBM layer by exposure to air caused large hysteresis in the FET. The memory window, characterized by the threshold voltage difference, increased upon exposure to air and this is attributed to an increase in the number of electron trapping centers and (or) an increase in the dielectric relaxation time in the underlying PCBM layer. Decrease in the electron conduction in the PCBM close to the SiO{sub 2} gate dielectric upon exposure to air is consistent with the increase in the dielectric relaxation time, ensuring that the presence of large hysteresis in the FET originates from electron trapping at the PCBM not at the pentacene. - Highlights: • Charge trapping-induced memory effect was clarified using transistors. • The memory window can be enhanced by controlling charge trapping mechanism. • Memory transistors can be optimized by controlling dielectric relaxation time.

  13. Magnetic vortex racetrack memory

    Science.gov (United States)

    Geng, Liwei D.; Jin, Yongmei M.

    2017-02-01

    We report a new type of racetrack memory based on current-controlled movement of magnetic vortices in magnetic nanowires with rectangular cross-section and weak perpendicular anisotropy. Data are stored through the core polarity of vortices and each vortex carries a data bit. Besides high density, non-volatility, fast data access, and low power as offered by domain wall racetrack memory, magnetic vortex racetrack memory has additional advantages of no need for constrictions to define data bits, changeable information density, adjustable current magnitude for data propagation, and versatile means of ultrafast vortex core switching. By using micromagnetic simulations, current-controlled motion of magnetic vortices in cobalt nanowire is demonstrated for racetrack memory applications.

  14. Fast Magnetoresistive Random-Access Memory

    Science.gov (United States)

    Wu, Jiin-Chuan; Stadler, Henry L.; Katti, Romney R.

    1991-01-01

    Magnetoresistive binary digital memories of proposed new type expected to feature high speed, nonvolatility, ability to withstand ionizing radiation, high density, and low power. In memory cell, magnetoresistive effect exploited more efficiently by use of ferromagnetic material to store datum and adjacent magnetoresistive material to sense datum for readout. Because relative change in sensed resistance between "zero" and "one" states greater, shorter sampling and readout access times achievable.

  15. LDRD Final Report - Investigations of the impact of the process integration of deposited magnetic films for magnetic memory technologies on radiation-hardened CMOS devices and circuits - LDRD Project (FY99)

    Energy Technology Data Exchange (ETDEWEB)

    MYERS,DAVID R.; JESSING,JEFFREY R.; SPAHN,OLGA B.; SHANEYFELT,MARTY R.

    2000-01-01

    This project represented a coordinated LLNL-SNL collaboration to investigate the feasibility of developing radiation-hardened magnetic non-volatile memories using giant magnetoresistance (GMR) materials. The intent of this limited-duration study was to investigate whether giant magnetoresistance (GMR) materials similar to those used for magnetic tunnel junctions (MTJs) were process compatible with functioning CMOS circuits. Sandia's work on this project demonstrated that deposition of GMR materials did not affect the operation nor the radiation hardness of Sandia's rad-hard CMOS technology, nor did the integration of GMR materials and exposure to ionizing radiation affect the magnetic properties of the GMR films. Thus, following deposition of GMR films on rad-hard integrated circuits, both the circuits and the films survived ionizing radiation levels consistent with DOE mission requirements. Furthermore, Sandia developed techniques to pattern deposited GMR films without degrading the completed integrated circuits upon which they were deposited. The present feasibility study demonstrated all the necessary processing elements to allow fabrication of the non-volatile memory elements onto an existing CMOS chip, and even allow the use of embedded (on-chip) non-volatile memories for system-on-a-chip applications, even in demanding radiation environments. However, funding agencies DTRA, AIM, and DARPA did not have any funds available to support the required follow-on technology development projects that would have been required to develop functioning prototype circuits, nor were such funds available from LDRD nor from other DOE program funds.

  16. cAMP response element-binding protein in the amygdala is required for long- but not short-term conditioned taste aversion memory.

    Science.gov (United States)

    Lamprecht, R; Hazvi, S; Dudai, Y

    1997-11-01

    In conditioned taste aversion (CTA) organisms learn to avoid a taste if the first encounter with that taste is followed by transient poisoning. The neural mechanisms that subserve this robust and long-lasting association of taste and malaise have not yet been elucidated, but several brain areas have been implicated in the process, including the amygdala. In this study we investigated the role of amygdala in general, and the cAMP response element-binding protein (CREB) in the amygdala in particular, in CTA learning and memory. Toward that end, we combined antisense technology in vivo with behavioral, molecular, and histochemical analysis. Local microinjection of phosphorothioate-modified oligodeoxynucleotides (ODNs) antisense to CREB into the rat amygdala several hours before CTA training transiently reduced the level of CREB protein during training and impaired CTA memory when tested 3-5 d later. In comparison, sense ODNs had no effect on memory. The effect of antisense was not attributable to differential tissue damage and was site-specific. CREB antisense in the amygdala had no effect on retrieval of CTA memory once it had been formed, and did not affect short-term CTA memory. We propose that the amygdala, specifically the central nucleus, is required for the establishment of long-term CTA memory in the behaving rat; that the process involves long-term changes, subserved by CRE-regulated gene expression, in amygdala neurons; and that the amygdala may retain some CTA-relevant information over time rather than merely modulating the gustatory trace during acquisition of CTA.

  17. The future of memory

    Science.gov (United States)

    Marinella, M.

    In the not too distant future, the traditional memory and storage hierarchy of may be replaced by a single Storage Class Memory (SCM) device integrated on or near the logic processor. Traditional magnetic hard drives, NAND flash, DRAM, and higher level caches (L2 and up) will be replaced with a single high performance memory device. The Storage Class Memory paradigm will require high speed (read/write), excellent endurance (> 1012), nonvolatility (retention > 10 years), and low switching energies (memory (PCM). All of these devices show potential well beyond that of current flash technologies and research efforts are underway to improve the endurance, write speeds, and scalabilities to be on-par with DRAM. This progress has interesting implications for space electronics: each of these emerging device technologies show excellent resistance to the types of radiation typically found in space applications. Commercially developed, high density storage class memory-based systems may include a memory that is physically radiation hard, and suitable for space applications without major shielding efforts. This paper reviews the Storage Class Memory concept, emerging memory devices, and possible applicability to radiation hardened electronics for space.

  18. A study on electromechanical carbon nanotube memory devices

    International Nuclear Information System (INIS)

    Kang, Jeong Won; Hwang, Ho Jung

    2005-01-01

    Electromechanical operations of carbon-nanotube (CNT) bridge memory device were investigated by using atomistic simulations based on empirical potentials. The nanotube-bridge memory device was operated by the electrostatic and the van der Waals forces acting on the nanotube-bridge. For the CNT bridge memory device, the van der Waals interactions between the CNT bridge and the oxide were very important. As the distance between the CNT bridge and the oxide decreased and the van der Waals interaction energy increased, the pull-in bias of the CNT-bridge decreased and the nonvolatility of the nanotube-bridge memory device increased, while the pull-out voltages increased. When the materials composed of the oxide film are different, since the van der Waals interactions must be also different, the oxide materials must be carefully selected for the CNT-bridge memory device to work as a nonvolatile memory.

  19. Non Volatile Flash Memory Radiation Tests

    Science.gov (United States)

    Irom, Farokh; Nguyen, Duc N.; Allen, Greg

    2012-01-01

    Commercial flash memory industry has experienced a fast growth in the recent years, because of their wide spread usage in cell phones, mp3 players and digital cameras. On the other hand, there has been increased interest in the use of high density commercial nonvolatile flash memories in space because of ever increasing data requirements and strict power requirements. Because of flash memories complex structure; they cannot be treated as just simple memories in regards to testing and analysis. It becomes quite challenging to determine how they will respond in radiation environments.

  20. Modeling of SONOS Memory Cell Erase Cycle

    Science.gov (United States)

    Phillips, Thomas A.; MacLeod, Todd C.; Ho, Fat H.

    2011-01-01

    Utilization of Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) nonvolatile semiconductor memories as a flash memory has many advantages. These electrically erasable programmable read-only memories (EEPROMs) utilize low programming voltages, have a high erase/write cycle lifetime, are radiation hardened, and are compatible with high-density scaled CMOS for low power, portable electronics. In this paper, the SONOS memory cell erase cycle was investigated using a nonquasi-static (NQS) MOSFET model. Comparisons were made between the model predictions and experimental data.

  1. Episodic Memories

    Science.gov (United States)

    Conway, Martin A.

    2009-01-01

    An account of episodic memories is developed that focuses on the types of knowledge they represent, their properties, and the functions they might serve. It is proposed that episodic memories consist of "episodic elements," summary records of experience often in the form of visual images, associated to a "conceptual frame" that provides a…

  2. Thermal effects in magnetoelectric memories with stress-mediated switching

    International Nuclear Information System (INIS)

    Giordano, S; Dusch, Y; Tiercelin, N; Pernod, P; Preobrazhensky, V

    2013-01-01

    Heterostructures with magneto-electro-elastic coupling (e.g. multiferroics) are of paramount importance for developing new sensors, actuators and memories. With the progressive miniaturization of these systems it is necessary to take into account possible thermal effects, which may influence the normal operating regime. As a paradigmatic example we consider a recently introduced non-volatile memory element composed of a magnetostrictive nanoparticle embedded in a piezoelectric matrix. The distributions of the physical fields in this matrix/inclusion configuration are determined by means of the Eshelby theory, the magnetization dynamics is studied through the Landau–Lifshitz–Gilbert formalism, and the statistical mechanics is introduced with the Langevin and Fokker–Planck methodologies. As result of the combination of such techniques we determine the switching time between the states of the memory, the error probability and the energy dissipation of the writing process. They depend on the ratio k B T/v where T is the absolute temperature and v is the volume of the magnetoelastic particle. (paper)

  3. Phosphorylated cAMP response element-binding protein as a molecular marker of memory processing in rat hippocampus: effect of novelty

    OpenAIRE

    Viola, Haydée Ana María; Furman, Melina; Izquierdo, Luciana Adriana; Alonso, Mariana; Barros, Daniela Martí; Souza, Márcia Maria de; Izquierdo, Ivan Antônio; Medina, Jorge Horacio

    2000-01-01

    From mollusks to mammals the activation of cAMP response element-binding protein (CREB) appears to be an important step in the formation of long-term memory (LTM). Here we show that a 5 min exposure to a novel environment (open field) 1 hr after acquisition of a one-trial inhibitory avoidance training hinders both the formation of LTM for the avoidance task and the increase in the phosphorylation state of hippocampal Ser 133 CREB [phosphorylated CREB (pCREB)] associated with the avoidance tra...

  4. Carbon nanotube network-silicon oxide non-volatile switches.

    Science.gov (United States)

    Liao, Albert D; Araujo, Paulo T; Xu, Runjie; Dresselhaus, Mildred S

    2014-12-08

    The integration of carbon nanotubes with silicon is important for their incorporation into next-generation nano-electronics. Here we demonstrate a non-volatile switch that utilizes carbon nanotube networks to electrically contact a conductive nanocrystal silicon filament in silicon dioxide. We form this device by biasing a nanotube network until it physically breaks in vacuum, creating the conductive silicon filament connected across a small nano-gap. From Raman spectroscopy, we observe coalescence of nanotubes during breakdown, which stabilizes the system to form very small gaps in the network~15 nm. We report that carbon nanotubes themselves are involved in switching the device to a high resistive state. Calculations reveal that this switching event occurs at ~600 °C, the temperature associated with the oxidation of nanotubes. Therefore, we propose that, in switching to a resistive state, the nanotube oxidizes by extracting oxygen from the substrate.

  5. Apple juice composition: sugar, nonvolatile acid, and phenolic profiles.

    Science.gov (United States)

    Lee, H S; Wrolstad, R E

    1988-01-01

    Apples from Michigan, Washington, Argentina, Mexico, and New Zealand were processed into juice; the 8 samples included Golden Delicious, Jonathan, Granny Smith, and McIntosh varieties. Liquid chromatography was used for quantitation of sugars (glucose, fructose, sucrose, and sorbitol), nonvolatile acids (malic, quinic, citric, shikimic, and fumaric), and phenolics (chlorogenic acid and hydroxymethylfurfural [HMF]). Other determinations included pH, 0Brix, and L-malic acid. A number of compositional indices for these authentic juices, e.g., chlorogenic acid content, total malic - L-malic difference, and the HMF:chlorogenic ratio, were at variance with recommended standards. The phenolic profile was shown to be particularly influenced by gelatin fining, with peak areas decreasing by as much as 50%. The L-malic:total malic ratio serves as a better index for presence of synthetic malic acid than does the difference between the 2 determinations. No apparent differences in chemical composition could be attributed to geographic origin.

  6. Non-volatile polarization switch of magnetic domain wall velocity

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Z.; Stolichnov, I.; Setter, N. [Ceramics Laboratory, EPFL-Swiss Federal Institute of Technology, Lausanne 1015 (Switzerland); Bernand-Mantel, A.; Schott, Marine; Pizzini, S.; Ranno, L. [University of Grenoble Alpes, Institut Néel, F-38042 Grenoble (France); CNRS, Institut Néel, F-38042 Grenoble (France); Auffret, S.; Gaudin, G. [SPINTEC, UMR-8191, CEA/CNRS/UJF/GINP, INAC, F-38054 Grenoble (France)

    2015-12-21

    Controlled propagation speed of individual magnetic domains in metal channels at the room temperature is obtained via the non-volatile field effect associated with the switchable polarization of P(VDF-TrFE) (polyvinylidene fluoride-trifluoroethylene) ferroelectric polymer. Polarization domains directly written using conducting atomic force microscope probe locally accelerate/decelerate the magnetic domains in the 0.6 nm thick Co film. The change of the magnetic domain wall velocity is consistent with the magnetic anisotropy energy modulation through the polarization upward/downward orientation. Excellent retention is observed. The demonstrated local non-destructive and reversible change of magnetic properties via rewritable patterning of ferroelectric domains could be attractive for exploring the ultimate limit of miniaturization in devices based on ferromagnetic/ferroelectric bilayers.

  7. Skin-Inspired Haptic Memory Arrays with an Electrically Reconfigurable Architecture.

    Science.gov (United States)

    Zhu, Bowen; Wang, Hong; Liu, Yaqing; Qi, Dianpeng; Liu, Zhiyuan; Wang, Hua; Yu, Jiancan; Sherburne, Matthew; Wang, Zhaohui; Chen, Xiaodong

    2016-02-24

    Skin-inspired haptic-memory devices, which can retain pressure information after the removel of external pressure by virtue of the nonvolatile nature of the memory devices, are achieved. The rise of haptic-memory devices will allow for mimicry of human sensory memory, opening new avenues for the design of next-generation high-performance sensing devices and systems. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Flash Memory Reliability: Read, Program, and Erase Latency Versus Endurance Cycling

    Science.gov (United States)

    Heidecker, Jason

    2010-01-01

    This report documents the efforts and results of the fiscal year (FY) 2010 NASA Electronic Parts and Packaging Program (NEPP) task for nonvolatile memory (NVM) reliability. This year's focus was to measure latency (read, program, and erase) of NAND Flash memories and determine how these parameters drift with erase/program/read endurance cycling.

  9. Scaling Techniques for Massive Scale-Free Graphs in Distributed (External) Memory

    KAUST Repository

    Pearce, Roger; Gokhale, Maya; Amato, Nancy M.

    2013-01-01

    We present techniques to process large scale-free graphs in distributed memory. Our aim is to scale to trillions of edges, and our research is targeted at leadership class supercomputers and clusters with local non-volatile memory, e.g., NAND Flash

  10. Writing to and reading from a nano-scale crossbar memory based on memristors

    International Nuclear Information System (INIS)

    Vontobel, Pascal O; Robinett, Warren; Kuekes, Philip J; Stewart, Duncan R; Straznicky, Joseph; Stanley Williams, R

    2009-01-01

    We present a design study for a nano-scale crossbar memory system that uses memristors with symmetrical but highly nonlinear current-voltage characteristics as memory elements. The memory is non-volatile since the memristors retain their state when un-powered. In order to address the nano-wires that make up this nano-scale crossbar, we use two coded demultiplexers implemented using mixed-scale crossbars (in which CMOS-wires cross nano-wires and in which the crosspoint junctions have one-time configurable memristors). This memory system does not utilize the kind of devices (diodes or transistors) that are normally used to isolate the memory cell being written to and read from in conventional memories. Instead, special techniques are introduced to perform the writing and the reading operation reliably by taking advantage of the nonlinearity of the type of memristors used. After discussing both writing and reading strategies for our memory system in general, we focus on a 64 x 64 memory array and present simulation results that show the feasibility of these writing and reading procedures. Besides simulating the case where all device parameters assume exactly their nominal value, we also simulate the much more realistic case where the device parameters stray around their nominal value: we observe a degradation in margins, but writing and reading is still feasible. These simulation results are based on a device model for memristors derived from measurements of fabricated devices in nano-scale crossbars using Pt and Ti nano-wires and using oxygen-depleted TiO 2 as the switching material.

  11. Next generation spin torque memories

    CERN Document Server

    Kaushik, Brajesh Kumar; Kulkarni, Anant Aravind; Prajapati, Sanjay

    2017-01-01

    This book offers detailed insights into spin transfer torque (STT) based devices, circuits and memories. Starting with the basic concepts and device physics, it then addresses advanced STT applications and discusses the outlook for this cutting-edge technology. It also describes the architectures, performance parameters, fabrication, and the prospects of STT based devices. Further, moving from the device to the system perspective it presents a non-volatile computing architecture composed of STT based magneto-resistive and all-spin logic devices and demonstrates that efficient STT based magneto-resistive and all-spin logic devices can turn the dream of instant on/off non-volatile computing into reality.

  12. Organic ferroelectric/semiconducting nanowire hybrid layer for memory storage

    NARCIS (Netherlands)

    Cai, R.; Kassa, H.G.; Haouari, R.; Marrani, A.; Geerts, Y.H.; Ruzié, C.; Breemen, A.J.J.M. van; Gelinck, G.H.; Nysten, B.; Hu, Z.; Jonas, A.M.

    2016-01-01

    Ferroelectric materials are important components of sensors, actuators and non-volatile memories. However, possible device configurations are limited due to the need to provide screening charges to ferroelectric interfaces to avoid depolarization. Here we show that, by alternating ferroelectric and

  13. Investigations concerning the exchange of iodine from non-volatile organic iodine compounds

    International Nuclear Information System (INIS)

    Psarros, N.; Duschner, H.; Molzahn, D.; Schmidt, L.; Heise, S.; Jungclas, H.; Brandt, R.; Patzelt, P.

    1990-10-01

    The iodine produced by nuclear fission is removed during the reprocessing of exhausted nuclear fuel elements by desorption achieving good decontamination factors. Nevertheless the further optimization of the process requires detailed information about the iodine speciation during fuel reprocessing, and about possible reactions. For the study of decomposition reactions of iodo-alcanes, which are built up during the fuel recycling process, we developed a method for the synthesis of labelled iodo-dodecane, which was used as tracer. In order to identify the iodo species in the organic phase of the reprocessing cycle we applied plasma desorption time-of-flight mass spectroscopy. The problem of the volatility of the iodo-compounds in the ultra vacuum of the mass spectrometer was overcome by derivatization of the iodo-alcanes with dithizon, which yielded non-volatile ionic alcyltetrazolium iodides. Beta-spectrometric analysis of the exhaust condensates collected from the organic phase of the WAK reprocessing cycle revealed beside iodine-129 the existence of a low-energetic beta emitter, which has yet to be identified. A literature survey on the topic was also performed. (orig.) With 42 refs., 9 figs [de

  14. High frequency and magnetoelectrical properties of magnetoresistive memory element based on FeCoNi/TiN/FeCoNi film

    Directory of Open Access Journals (Sweden)

    Kurlyandskaya, G. V.

    2000-08-01

    Full Text Available A miniaturised memory device for information recording and readout processes have been designed on the basis of anisotropic magnetoresistive effect in Fe15Co20Ni65(160Å/ TiN(50Å/Fe15Co20Ni65(160Å three-layered film done by rf diode sputtering. Stable recording and readout processes were available for 32 rectangular element column, where each element had μm dimensions convenient to fabricate memory chip with 106 bits capacity. Rectangles of different sizes with removed corners were used in order to define the geometry of most of all stable recording and readout processes. Magnetoresistance and magnetoimpedance effects of a magnetic memory device have been comparatively analysed. We suggest that the decrease of the absolute value of the magnetoimpedance of the memory device comes from the reduction of the real part via the magnetoresistance.

    Se ha diseñado un dispositivo de memoria para la grabación y lectura de información basado en el efecto de la anisotropía magnetorresistiva de una multicapa fabricada por sputtering mediante diodo de rf. El elemento de memoria se compone de tres películas delgadas, de composición Fe15Co20Ni65(160Å/ TiN(50Å/Fe15Co20Ni65(160Å. El dispositivo permite procesos de grabación y lectura estables, y se compone de 32 elementos de memoria rectangulares por columna, donde cada elemento tiene dimensiones de μm lo que permite la fabricación de memorias integradas con capacidades del orden de 106 bits. Se han ensayado elementos de memoria rectangulares de diferentes tamaños, con las esquinas redondeadas con objeto de conseguir procesos de lectura-escritura lo más estable posible. Se han analizado comparativamente los efectos de magnetorresistencia y magnetoimpedancia de los elementos de memoria de diferentes dimensiones. Sugerimos que la disminución del valor absoluto de la magnetoimpedancia del elemento de memoria es consecuencia de la reducción de la parte real, de origen magnetorresistivo.

  15. Mass transfer of nonvolatile organic compounds from porous media

    Science.gov (United States)

    Khachikian, Crist Simon

    This thesis presents data pertaining to the mass transfer of nonvolatile organic compounds from porous media. Physical properties of porous solids, including surface and pore areas, are studied. Information from these studies, along with dissolution data, are used to develop correlations relating the Sherwood Number to the Peclet Number. The contaminant used in this study is naphthalene; the solids used are Moffett Sand (MS), Borden Sand (BS), Lampblack (LB), and Silica Gel (SG). Surface area results indicate that contamination at 0.1% reduces the area of MS and SG by 48 and 37%, respectively, while contamination at 1.0% reduces the area of MS, BS, and SG by 59, 56, and 40%, respectively. Most of the reduction in area originates in the reduction of pore areas and volumes, where the contaminant precipitates. After long-term storage, surface areas did not recover to their original values due to an "irreversible" fraction of naphthalene. Treatment with heat or solvent or both was necessary to completely remove the contamination. For lampblack, treatment at 100°C decreased areas while treatment at 250°C increased them. Treatment at 250°°C probably opened pores while that at 100°C may have blocked more pores by redistributing the tar-like contaminant characteristic of lampblack. Contaminated MS and SG solids are packed in columns through which water is pumped. The effluent began at a relatively high concentration (˜70% of solubility) for both samples. However, SG column concentrations dropped quickly, never achieving steady state while the MS samples declined more gradually towards steady state. The high pore areas of the SG samples are believed to cause this behavior. The steady state portion of the MS dissolution history is used to develop mass transfer correlations. The correlation in this study differs from previous work in two major ways: (1) the exponent on the Pe is three times larger and (2) the limiting Sh is 106 times smaller. These results suggest that

  16. Magnetic vortex racetrack memory

    Energy Technology Data Exchange (ETDEWEB)

    Geng, Liwei D.; Jin, Yongmei M., E-mail: ymjin@mtu.edu

    2017-02-01

    We report a new type of racetrack memory based on current-controlled movement of magnetic vortices in magnetic nanowires with rectangular cross-section and weak perpendicular anisotropy. Data are stored through the core polarity of vortices and each vortex carries a data bit. Besides high density, non-volatility, fast data access, and low power as offered by domain wall racetrack memory, magnetic vortex racetrack memory has additional advantages of no need for constrictions to define data bits, changeable information density, adjustable current magnitude for data propagation, and versatile means of ultrafast vortex core switching. By using micromagnetic simulations, current-controlled motion of magnetic vortices in cobalt nanowire is demonstrated for racetrack memory applications. - Highlights: • Advance fundamental knowledge of current-driven magnetic vortex phenomena. • Report appealing new magnetic racetrack memory based on current-controlled magnetic vortices in nanowires. • Provide a novel approach to adjust current magnitude for data propagation. • Overcome the limitations of domain wall racetrack memory.

  17. Large non-volatile tuning of magnetism mediated by electric field in Fe–Al/Pb(Mg1/3Nb2/3)O3–PbTiO3 heterostructure

    International Nuclear Information System (INIS)

    Chen, Zhendong; Gao, Cunxu; Wei, Yanping; Zhang, Peng; Wang, Yutian; Zhang, Chao; Ma, Zhikun

    2017-01-01

    Electric-field control of magnetism is now an attractive trend to approach a new kind of fast, low-power-cost memory device. In this work, we report a strong non-volatile electric control of magnetism in an Fe–Al/Pb(Mg 1/3 Nb 2/3 )O 3 –PbTiO 3 heterostructure. In this system, a 90° rotation of the in-plane uniaxial magnetic anisotropy is exhibited during the increase of the external electric field, which means the easy axis turns into a hard axis and the hard axis turns into an easy one. Additionally, a non-volatile switch of the remanence is observed after a sweeping of the electric field from 0 kV cm −1 to  ±  10 kV cm −1 , then back to 0 kV cm −1 . More interestingly, a 20% non-volatile magnetic state tuning driven by individual pulse electric fields is shown in contrast to large tuning up to 120% caused by pulse electric fields with small assistant pulse magnetic fields, which means a 180° reverse of the magnetization. These remarkable behaviors demonstrated in this heterostructure reveal a promising potential application in magnetic memory devices mediated by electric fields. (paper)

  18. Quantitative reconstruction of the nonvolatile sensometabolome of a red wine.

    Science.gov (United States)

    Hufnagel, Jan Carlos; Hofmann, Thomas

    2008-10-08

    The first comprehensive quantitative determination of 82 putative taste-active metabolites and mineral salts, the ranking of these compounds in their sensory impact based on dose-over-threshold (DoT) factors, followed by the confirmation of their sensory relevance by taste reconstruction and omission experiments enabled the decoding of the nonvolatile sensometabolome of a red wine. For the first time, the bitterness of the red wine could be demonstrated to be induced by subthreshold concentrations of phenolic acid ethyl esters and flavan-3-ols. Whereas the velvety astringent onset was imparted by three flavon-3-ol glucosides and dihydroflavon-3-ol rhamnosides, the puckering astringent offset was caused by a polymeric fraction exhibiting molecular masses above >5 kDa and was found to be amplified by the organic acids. The perceived sourness was imparted by l-tartaric acid, d-galacturonic acid, acetic acid, succinic acid, l-malic acid, and l-lactic acid and was slightly suppressed by the chlorides of potassium, magnesium, and ammonium, respectively. In addition, d-fructose and glycerol as well as subthreshold concentrations of glucose, 1,2-propandiol, and myo-inositol were found to be responsible for the sweetness, whereas the mouthfulness and body of the red wine were induced only by glycerol, 1,2-propandiol, and myo-inositol.

  19. Ferroelectric-gate field effect transistor memories device physics and applications

    CERN Document Server

    Ishiwara, Hiroshi; Okuyama, Masanori; Sakai, Shigeki; Yoon, Sung-Min

    2016-01-01

    This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has progressed most actively since the late 1980s and has achieved modest mass production levels for specific applications since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handic...

  20. Nonvolatile, semivolatile, or volatile: redefining volatile for volatile organic compounds.

    Science.gov (United States)

    Võ, Uyên-Uyén T; Morris, Michael P

    2014-06-01

    Although widely used in air quality regulatory frameworks, the term "volatile organic compound" (VOC) is poorly defined. Numerous standardized tests are currently used in regulations to determine VOC content (and thus volatility), but in many cases the tests do not agree with each other, nor do they always accurately represent actual evaporation rates under ambient conditions. The parameters (time, temperature, reference material, column polarity, etc.) used in the definitions and the associated test methods were created without a significant evaluation of volatilization characteristics in real world settings. Not only do these differences lead to varying VOC content results, but occasionally they conflict with one another. An ambient evaporation study of selected compounds and a few formulated products was conducted and the results were compared to several current VOC test methodologies: SCAQMD Method 313 (M313), ASTM Standard Test Method E 1868-10 (E1868), and US. EPA Reference Method 24 (M24). The ambient evaporation study showed a definite distinction between nonvolatile, semivolatile, and volatile compounds. Some low vapor pressure (LVP) solvents, currently considered exempt as VOCs by some methods, volatilize at ambient conditions nearly as rapidly as the traditional high-volatility solvents they are meant to replace. Conversely, bio-based and heavy hydrocarbons did not readily volatilize, though they often are calculated as VOCs in some traditional test methods. The study suggests that regulatory standards should be reevaluated to more accurately reflect real-world emission from the use of VOC containing products. The definition of VOC in current test methods may lead to regulations that exclude otherwise viable alternatives or allow substitutions of chemicals that may limit the environmental benefits sought in the regulation. A study was conducted to examine volatility of several compounds and a few formulated products under several current VOC test

  1. Design of SMART alarm system using main memory database

    International Nuclear Information System (INIS)

    Jang, Kue Sook; Seo, Yong Seok; Park, Keun Oak; Lee, Jong Bok; Kim, Dong Hoon

    2001-01-01

    To achieve design goal of SMART alarm system, first of all we have to decide on how to handle and manage alarm information and how to use database. So this paper analyses concepts and deficiencies of main memory database applied in real time system. And this paper sets up structure and processing principles of main memory database using nonvolatile memory such as flash memory and develops recovery strategy and process board structures using these. Therefore this paper shows design of SMART alarm system is suited functions and requirements

  2. The effect of addition of various elements on properties of NiTi-based shape memory alloys for biomedical application

    Science.gov (United States)

    Kök, Mediha; Ateş, Gonca

    2017-04-01

    In biomedical applications, NiTi and NiTi-based alloys that show their shape memory effects at body temperature are preferred. In this study, the purpose is to produce NiTi and NiTi-based alloys with various chemical rates and electron concentrations and to examine their various physical properties. N45Ti55, Ni45Ti50Cr2.5Cu2.5, Ni48Ti51X (X=Mn, Sn, Co) alloys were produced in an arc melter furnace in this study. After the homogenization of these alloys, the martensitic phase transformation temperatures were determined with differential-scanner calorimeter. The transformation temperature was found to be below the 37 ° C (body temperature) in Ni45Ti50Cr2.5Cu2.5, Ni48Ti51X (X=Mn, Co) alloys; and the transformation temperature of the N45Ti55, Ni48Ti51Sn alloys was found to be over 37 ° C . Then, the micro and crystal structure analyses of the alloys were made, and it was determined that Ni45Ti50Cr2.5Cu2.5, Ni48Ti51X (X=Mn, Co) alloys, which were in austenite phase at room temperature, included B2 (NiTi) phase and Ti2Ni precipitation phase, and the alloys that were in the martensite phase at room temperature included B19ı (NiTi) phase and Ti2Ni phase. The common phase in both alloy groups is the Ti2Ni phase, and this type of phase is generally seen in NiTi alloys that are rich in titanium (Ti-rich).

  3. Direct observation of conductive filament formation in Alq3 based organic resistive memories

    Energy Technology Data Exchange (ETDEWEB)

    Busby, Y., E-mail: yan.busby@unamur.be; Pireaux, J.-J. [Research Center in the Physics of Matter and Radiation (PMR), Laboratoire Interdisciplinaire de Spectroscopie Electronique (LISE), University of Namur, B-5000 Namur (Belgium); Nau, S.; Sax, S. [NanoTecCenter Weiz Forschungsgesellschaft mbH, Franz-Pichler Straße 32, A-8160 Weiz (Austria); List-Kratochvil, E. J. W. [NanoTecCenter Weiz Forschungsgesellschaft mbH, Franz-Pichler Straße 32, A-8160 Weiz (Austria); Institute of Solid State Physics, Graz University of Technology, A-8010 Graz (Austria); Novak, J.; Banerjee, R.; Schreiber, F. [Institute of Applied Physics, Eberhard-Karls-Universität Tübingen, D-72076 Tübingen (Germany)

    2015-08-21

    This work explores resistive switching mechanisms in non-volatile organic memory devices based on tris(8-hydroxyquinolie)aluminum (Alq{sub 3}). Advanced characterization tools are applied to investigate metal diffusion in ITO/Alq{sub 3}/Ag memory device stacks leading to conductive filament formation. The morphology of Alq{sub 3}/Ag layers as a function of the metal evaporation conditions is studied by X-ray reflectivity, while depth profile analysis with X-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectrometry is applied to characterize operational memory elements displaying reliable bistable current-voltage characteristics. 3D images of the distribution of silver inside the organic layer clearly point towards the existence of conductive filaments and allow for the identification of the initial filament formation and inactivation mechanisms during switching of the device. Initial filament formation is suggested to be driven by field assisted diffusion of silver from abundant structures formed during the top electrode evaporation, whereas thermochemical effects lead to local filament inactivation.

  4. High frequency electromechanical memory cells based on telescoping carbon nanotubes.

    Science.gov (United States)

    Popov, A M; Lozovik, Y E; Kulish, A S; Bichoutskaia, E

    2010-07-01

    A new method to increase the operational frequency of electromechanical memory cells based on the telescoping motion of multi-walled carbon nanotubes through the selection of the form of the switching voltage pulse is proposed. The relative motion of the walls of carbon nanotubes can be controlled through the shape of the interwall interaction energy surface. This allows the use of the memory cells in nonvolatile or volatile regime, depending on the structure of carbon nanotube. Simulations based on ab initio and semi-empirical calculations of the interwall interaction energies are used to estimate the switching voltage and the operational frequency of volatile cells with the electrodes made of carbon nanotubes. The lifetime of nonvolatile memory cells is also predicted.

  5. Nonvolatile flexible organic bistable devices fabricated utilizing CdSe/ZnS nanoparticles embedded in a conducting poly N-vinylcarbazole polymer layer

    International Nuclear Information System (INIS)

    Son, Dong-Ick; Kim, Ji-Hwan; Park, Dong-Hee; Choi, Won Kook; Li, Fushan; Ham, Jung Hun; Kim, Tae Whan

    2008-01-01

    The bistable effects of CdSe/ZnS nanoparticles embedded in a conducting poly N-vinylcarbazole (PVK) polymer layer by using flexible poly-vinylidene difluoride (PVDF) and polyethylene terephthalate (PET) substrates were investigated. Transmission electron microscopy (TEM) images revealed that CdSe/ZnS nanoparticles were formed inside the PVK polymer layer. Current-voltage (I-V) measurement on the Al/[CdSe/ZnS nanoparticles+ PVK]/ITO/PVDF and Al/[CdSe/ZnS nanoparticles+ PVK ]/ITO/PET structures at 300 K showed a nonvolatile electrical bistability behavior with a flat-band voltage shift due to the existence of the CdSe/ZnS nanoparticles, indicative of trapping, storing and emission of charges in the electronic states of the CdSe nanoparticles. A bistable behavior for the fabricated organic bistable device (OBD) structures is described on the basis of the I-V results. These results indicate that OBDs fabricated by embedding inorganic CdSe/ZnS nanoparticles in a conducting polymer matrix on flexible substrates are prospects for potential applications in flexible nonvolatile flash memory devices

  6. Finite element analysis of smart reinforced concrete beam with super elastic shape memory alloy subjected to static loading for seismic mitigation

    Science.gov (United States)

    Hamid, Nubailah Abd; Ismail, Muhammad Hussain; Ibrahim, Azmi; Adnan, Azlan

    2018-05-01

    Reinforced concrete beam has been among major applications in construction nowadays. However, the application of nickel titanium alloy as a replacement for steel rebar in reinforced concrete beam is a new approach nowadays despite of their ability to undergo large deformations and return to their undeformed shape by removal of stresses. In this paper, the response of simply supported reinforced concrete (RC) beams with smart rebars, control beam subjected to static load has been numerically studied, and highlighted, using finite element method (FEM) where the material employed in this study is the superelastic shape memory alloys (SESMA). The SESMA is a unique alloy that has the ability to undergo large deformations and return to their undeformed shape by removal of stresses. The size of the analysed beam is 125 mm × 270 mm × 2800 mm with 2 numbers of 12 mm diameter bars as main reinforcement for compression and 12 numbers of 12 as tension or hanger bars while 6 mm diameter at 100 mm c/c used as shear reinforcement bars respectively. The concrete was modelled using solid 65 element (in ANSYS) and rebars were modelled using beam 188 elements (in ANSYS). The result for reinforced concrete with nickel titanium alloy rebar is compared with the result obtained for reinforced concrete beam with steel rebar in term of flexural behavior, load displacement relationship, crack behaviour and failure modes for various loading conditions starting from 10kN to 100kN using 3D FE modelling in ANSYS v 15. The response and result obtained from the 3D finite element analysis used in this study is load-displacement curves, residual displacements, Von-Misses, strain and stiffness are suitable for the corresponding result showed a satisfactory performance in the structural analysis. Resultant displacement, Von-Mises stress and maximum strain were influenced by the factors of the material properties, load increments and the mesh size. Nickel titanium alloy was superior to the

  7. Enhanced non-volatile and updatable holography using a polymer composite system.

    Science.gov (United States)

    Wu, Pengfei; Sun, Sam Q; Baig, Sarfaraz; Wang, Michael R

    2012-03-12

    Updatable holography is considered as the ultimate technique for true 3D information recording and display. However, there is no practical solution to preserve the required features of both non-volatility and reversibility which conflict with each other when the reading has the same wavelength as the recording. We demonstrate a non-volatile and updatable holographic approach by exploiting new features of molecular transformations in a polymer recording system. In addition, by using a new composite recording film containing photo-reconfigurable liquid-crystal (LC) polymer, the holographic recording is enhanced due to the collective reorientation of LC molecules around the reconfigured polymer chains.

  8. Charge retention in scaled SONOS nonvolatile semiconductor memory devices—Modeling and characterization

    Science.gov (United States)

    Hu, Yin; White, Marvin H.

    1993-10-01

    A new analytical model is developed to investigate the influence of the charge loss processes in the retention mode of the SONOS NVSM device. The model considers charge loss by the following processes: (1) electron back-tunneling from the nitride traps to the Si conduction band, (2) electron back-tunneling from the nitride traps to the Si/SiO 2 interface traps and (3) hole injection from the Si valence band to the nitride traps. An amphoteric trap charge distribution is used in this model. The new charge retention model predicts that process (1) determines the short term retention, while processes (2) and (3) determine the long term retention. Good agreement has been reached between the results of analytical calculations and the experimental retention data on both surface channel and buried channel SONOS devices.

  9. Carbon Nanofibers Synthesized on Selective Substrates for Nonvolatile Memory and 3D Electronics

    Science.gov (United States)

    Kaul, Anupama B.; Khan, Abdur R.

    2011-01-01

    A plasma-enhanced chemical vapor deposition (PECVD) growth technique has been developed where the choice of starting substrate was found to influence the electrical characteristics of the resulting carbon nanofiber (CNF) tubes. It has been determined that, if the tubes are grown on refractory metallic nitride substrates, then the resulting tubes formed with dc PECVD are also electrically conducting. Individual CNFs were formed by first patterning Ni catalyst islands using ebeam evaporation and liftoff. The CNFs were then synthesized using dc PECVD with C2H2:NH3 = [1:4] at 5 Torr and 700 C, and approximately equal to 200-W plasma power. Tubes were grown directly on degenerately doped silicon substrates with resistivity rho approximately equal to 1-5 meterohm-centimeter, as well as NbTiN. The approximately equal to 200-nanometer thick refractory NbTiN deposited using magnetron sputtering had rho approximately equal to 113 microohm-centimeter and was also chemically compatible with CNF synthesis. The sample was then mounted on a 45 beveled Al holder, and placed inside a SEM (scanning electron microscope). A nanomanipulator probe stage was placed inside the SEM equipped with an electrical feed-through, where tungsten probes were used to make two-terminal electrical measurements with an HP 4156C parameter analyzer. The positive terminal nanoprobe was mechanically manipulated to physically contact an individual CNF grown directly on NbTiN as shown by the SEM image in the inset of figure (a), while the negative terminal was grounded to the substrate. This revealed the tube was electrically conductive, although measureable currents could not be detected until approximately equal to 6 V, after which point current increased sharply until compliance (approximately equal to 50 nA) was reached at approximately equal to 9.5 V. A native oxide on the tungsten probe tips may contribute to a tunnel barrier, which could be the reason for the suppressed transport at low biases. Currents up to approximately 100 nA could be cycled, which are likely to propagate via the tube surface, or sidewalls, rather than the body, which is shown by the I-V in figure (a). Electrical conduction via the sidewalls is a necessity for dc NEMS (nanoelectromechanical system) applications, more so than for the field emission applications of such tubes. During the tests, high conductivity was expected, because both probes were shorted to the substrate, as shown by curve 1 in the I-V characteristic in figure (b). When a tube grown on NbTiN was probed, the response was similar to the approximately equal to 100 nA and is represented by curve 2 in figure (b), which could be cycled and propagated via the tube surface or the sidewalls. However, no measureable currents for the tube grown directly on Si were observed as shown by curve 3 in figure (b), even after testing over a range of samples. This could arise from a dielectric coating on the sidewalls for tubes on Si. As a result of the directional nature of ion bombardment during dc PECVD, Si from the substrate is likely re-sputtered and possibly coats the sidewalls.

  10. Integrating Two-Dimensional Nanomaterials and Molecular Dielectrics for Radiation-Hard Non-Volatile Memory

    Data.gov (United States)

    National Aeronautics and Space Administration — The space radiation environment presents a significant hazard to the critical electronic components used in a variety of space applications. Many such applications...

  11. Transport and Fatigue Properties of Ferroelectric Polymer P(VDF-TrFE) For Nonvolatile Memory Applications

    KAUST Repository

    Hanna, Amir

    2012-01-01

    injection and transport are believed to affect various properties of ferroelectric films such as remnant polarization values and polarization fatigue behavior.. Thus, this thesis aims to study charge injection in P(VDF-TrFE) and its transport properties as a

  12. Low fatigue lead zirconate titanate-based capacitors modified by manganese for nonvolatile memories

    OpenAIRE

    Zhang, Qi; Whatmore, Roger W.

    2004-01-01

    We have investigated the effects of Mn doping on the ferroelectric properties of Pb(Zr0.3Ti0.7)O3 (PZT) thin films on substrates Pt/Ti/SiO2/Si. Small amount of Mn-doped (≤1 mol%) PZT (PMZT) showed almost no hysteretic fatigue up to 1010 switching bipolar pulse cycles, coupled with excellent retention properties. We present evidence that while a low permittivity interfacial layer forms between the Pt electrode and PZT films, this does not occur in PMZT. We propose that Mn dopants are able to r...

  13. Low fatigue lead zirconate titanate-based capacitors modified by manganese for nonvolatile memories

    International Nuclear Information System (INIS)

    Zhang, Q.; Whatmore, R.W.

    2004-01-01

    We have investigated the effects of Mn doping on the ferroelectric properties of Pb(Zr 0.3 Ti 0.7 )O 3 (PZT) thin films on substrates Pt/Ti/SiO 2 /Si. Small amount of Mn-doped (≤1 mol%) PZT (PMZT) showed almost no hysteretic fatigue up to 10 10 switching bipolar pulse cycles, coupled with excellent retention properties. We present evidence that while a low permittivity interfacial layer forms between the Pt electrode and PZT films, this does not occur in PMZT. We propose that Mn dopants are able to reduce oxygen vacancy mobility in PZT films and Mn 2+ ions consume the oxygen vacancies generated during repeated switching, forming Mn 4+ ions. These mechanisms are probably responsible for their low observed fatigue characteristics

  14. Integration of organic based Schottky junctions for crossbar non-volatile memory applications

    DEFF Research Database (Denmark)

    Katsia, E.; Tallarida, G.; Ferrari, S.

    2008-01-01

    Small size Schottky junctions using two different synthesized organic semiconductors (oligophenylene-vinylenes) were integrated by standard UV lithography into crossbar arrays. The proposed integration scheme can be applied to a wide class of organics without affecting material properties. Current...

  15. Nonvolatile and Cryogenic-compatible Quantum Memory Devices (QuMEM)

    Science.gov (United States)

    2016-06-01

    construction including: • 4” SiO2 /Si substrates and wafer/sample holders • Tweezers and wafer scribe • Safety glasses , gloves, and fab wipes • Probe tips...Cleaving of NbSe2 with Scotch™ Tape method ............................................................ 56 59. Transfer of NbSe2 atomic crystals to SiO2 ...O2 plasma + optional CF4 5 Top superconductor electrode evaporation Thermal Evaporation at SDSU MEMS Lab P+ Si Handle Wafer SiO2 (Oxide

  16. High-performance and low-power rewritable SiOx 1 kbit one diode-one resistor crossbar memory array.

    Science.gov (United States)

    Wang, Gunuk; Lauchner, Adam C; Lin, Jian; Natelson, Douglas; Palem, Krishna V; Tour, James M

    2013-09-14

    An entire 1-kilobit crossbar device based upon SiOx resistive memories with integrated diodes has been made. The SiOx -based one diode-one resistor device system has promise to satisfy the prerequisite conditions for next generation non-volatile memory applications. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Investigation on the Cyclic Response of Superelastic Shape Memory Alloy (SMA Slit Damper Devices Simulated by Quasi-Static Finite Element (FE Analyses

    Directory of Open Access Journals (Sweden)

    Jong Wan Hu

    2014-02-01

    Full Text Available In this paper, the superelastic shape memory alloy (SMA slit damper system as an alternative design approach for steel structures is intended to be evaluated with respect to inelastic behavior simulated by refined finite element (FE analyses. Although the steel slit dampers conventionally used for aseismic design are able to dissipate a considerable amount of energy generated by the plastic yielding of the base materials, large permanent deformation may occur in the entire structure. After strong seismic events, extra damage repair costs are required to restore the original configuration and to replace defective devices with new ones. Innovative slit dampers fabricated by superelastic SMAs that automatically recover their initial conditions only by the removal of stresses without heat treatment are introduced with a view toward mitigating the problem of permanent deformation. The cyclically tested FE models are calibrated to experimental results for the purpose of predicting accurate behavior. This study also focuses on the material constitutive model that is able to reproduce the inherent behavior of superelastic SMA materials by taking phase transformation between austenite and martensite into consideration. The responses of SMA slit dampers are compared to those of steel slit dampers. Axial stress and strain components are also investigated on the FE models under cyclic loading in an effort to validate the adequacy of FE modeling and then to compare between two slit damper systems. It can be shown that SMA slit dampers exhibit many structural advantages in terms of ultimate strength, moderate energy dissipation and recentering capability.

  18. High-speed nonvolatile CMOS/MNOS RAM

    International Nuclear Information System (INIS)

    Derbenwick, G.F.; Dodson, W.D.; Sokel, R.J.

    1979-01-01

    A bulk silicon technology for a high-speed static CMOS/MNOS RAM has been developed. Radiation-hardened, high voltage CMOS circuits have been fabricated for the memory array driving circuits and the enhancement-mode p-channel MNOS memory transistors have been fabricated using a native tunneling oxide with a 45 nm CVD Si 3 N 4 insulator deposited at 750 0 C. Read cycle times less than 350 ns and write cycle times of 1 μs are projected for the final 1Kx1 design. The CMOS circuits provide adequate speed for the write and read cycles and minimize the standby power dissipation. Retention times well in excess of 30 min are projected

  19. EqualChance: Addressing Intra-set Write Variation to Increase Lifetime of Non-volatile Caches

    Energy Technology Data Exchange (ETDEWEB)

    Mittal, Sparsh [ORNL; Vetter, Jeffrey S [ORNL

    2014-01-01

    To address the limitations of SRAM such as high-leakage and low-density, researchers have explored use of non-volatile memory (NVM) devices, such as ReRAM (resistive RAM) and STT-RAM (spin transfer torque RAM) for designing on-chip caches. A crucial limitation of NVMs, however, is that their write endurance is low and the large intra-set write variation introduced by existing cache management policies may further exacerbate this problem, thereby reducing the cache lifetime significantly. We present EqualChance, a technique to increase cache lifetime by reducing intra-set write variation. EqualChance works by periodically changing the physical cache-block location of a write-intensive data item within a set to achieve wear-leveling. Simulations using workloads from SPEC CPU2006 suite and HPC (high-performance computing) field show that EqualChance improves the cache lifetime by 4.29X. Also, its implementation overhead is small, and it incurs very small performance and energy loss.

  20. Towards Terabit Memories

    Science.gov (United States)

    Hoefflinger, Bernd

    Memories have been the major yardstick for the continuing validity of Moore's law. In single-transistor-per-Bit dynamic random-access memories (DRAM), the number of bits per chip pretty much gives us the number of transistors. For decades, DRAM's have offered the largest storage capacity per chip. However, DRAM does not scale any longer, both in density and voltage, severely limiting its power efficiency to 10 fJ/b. A differential DRAM would gain four-times in density and eight-times in energy. Static CMOS RAM (SRAM) with its six transistors/cell is gaining in reputation because it scales well in cell size and operating voltage so that its fundamental advantage of speed, non-destructive read-out and low-power standby could lead to just 2.5 electrons/bit in standby and to a dynamic power efficiency of 2aJ/b. With a projected 2020 density of 16 Gb/cm², the SRAM would be as dense as normal DRAM and vastly better in power efficiency, which would mean a major change in the architecture and market scenario for DRAM versus SRAM. Non-volatile Flash memory have seen two quantum jumps in density well beyond the roadmap: Multi-Bit storage per transistor and high-density TSV (through-silicon via) technology. The number of electrons required per Bit on the storage gate has been reduced since their first realization in 1996 by more than an order of magnitude to 400 electrons/Bit in 2010 for a complexity of 32Gbit per chip at the 32 nm node. Chip stacking of eight chips with TSV has produced a 32GByte solid-state drive (SSD). A stack of 32 chips with 2 b/cell at the 16 nm node will reach a density of 2.5 Terabit/cm². Non-volatile memory with a density of 10 × 10 nm²/Bit is the target for widespread development. Phase-change memory (PCM) and resistive memory (RRAM) lead in cell density, and they will reach 20 Gb/cm² in 2D and higher with 3D chip stacking. This is still almost an order-of-magnitude less than Flash. However, their read-out speed is ~10-times faster, with as yet

  1. WORKSHOP REPORT - CONSIDERATIONS FOR DEVELOPING LEACHING TEST METHODS FOR SEMI- AND NON-VOLATILE ORGANIC COMPOUNDS

    Science.gov (United States)

    The report provides a summary of the information exchange at a workshop on the potential for release of semi- or non-volatile organic constituents at contaminated sites where sub-surface treatment has been used to control migration, and from waste that is disposed or re-used. The...

  2. Feasibility of nonvolatile buffers in capillary electrophoresis-electrospray ionization-mass spectrometry of proteins

    NARCIS (Netherlands)

    Eriksson, Jonas H.C.; Mol, Roelof; Somsen, Govert W.; Hinrichs, Wouter L.J.; Frijlink, Henderik W.; de Jong, Gerhardus J.

    2004-01-01

    The combination of capillary electrophoresis (CE) and electrospray ionization-mass spectrometry (ESI-MS) via a triaxial interface was studied as a potential means for the characterization of intact proteins. To evaluate the possibility to use a nonvolatile electrolyte for CE, the effect of sodium

  3. Switching speed in resistive random access memories (RRAMS) based on plastic semiconductor

    NARCIS (Netherlands)

    Rocha, P.R.F.; Gomes, H.L.; Kiazadeh, A.; Chen, Qian; Leeuw, de D.M.; Meskers, S.C.J.

    2011-01-01

    This work addresses non-volatile memories based on metal-oxide polymer diodes. We make a thorough investigation into the static and dynamic behavior. Current-voltage characteristics with varying voltage ramp speed demonstrate that the internal capacitive double-layer structure inhibits the switching

  4. Single-Chip Computers With Microelectromechanical Systems-Based Magnetic Memory

    NARCIS (Netherlands)

    Carley, L. Richard; Bain, James A.; Fedder, Gary K.; Greve, David W.; Guillou, David F.; Lu, Michael S.C.; Mukherjee, Tamal; Santhanam, Suresh; Abelmann, Leon; Min, Seungook

    This article describes an approach for implementing a complete computer system (CPU, RAM, I/O, and nonvolatile mass memory) on a single integrated-circuit substrate (a chip)—hence, the name "single-chip computer." The approach presented combines advances in the field of microelectromechanical

  5. Memory window engineering of Ta2O5-x oxide-based resistive switches via incorporation of various insulating frames

    Science.gov (United States)

    Lee, Ah Rahm; Baek, Gwang Ho; Kim, Tae Yoon; Ko, Won Bae; Yang, Seung Mo; Kim, Jongmin; Im, Hyun Sik; Hong, Jin Pyo

    2016-07-01

    Three-dimensional (3D) stackable memory frames, including nano-scaled crossbar arrays, are one of the most reliable building blocks to meet the demand of high-density non-volatile memory electronics. However, their utilization has the disadvantage of introducing issues related to sneak paths, which can negatively impact device performance. We address the enhancement of complementary resistive switching (CRS) features via the incorporation of insulating frames as a generic approach to extend their use; here, a Pt/Ta2O5-x/Ta/Ta2O5-x/Pt frame is chosen as the basic CRS cell. The incorporation of Ta/Ta2O5-x/Ta or Pt/amorphous TaN/Pt insulting frames into the basic CRS cell ensures the appreciably advanced memory features of CRS cells including higher on/off ratios, improved read margins, and increased selectivity without reliability degradation. Experimental observations identified that a suitable insulating frame is crucial for adjusting the abrupt reset events of the switching element, thereby facilitating the enhanced electrical characteristics of CRS cells that are suitable for practical applications.

  6. Transparent Memory For Harsh Electronics

    KAUST Repository

    Ho, C. H.

    2017-03-14

    As a new class of non-volatile memory, resistive random access memory (RRAM) offers not only superior electronic characteristics, but also advanced functionalities, such as transparency and radiation hardness. However, the environmental tolerance of RRAM is material-dependent, and therefore the materials used must be chosen carefully in order to avoid instabilities and performance degradation caused by the detrimental effects arising from environmental gases and ionizing radiation. In this work, we demonstrate that AlN-based RRAM displays excellent performance and environmental stability, with no significant degradation to the resistance ratio over a 100-cycle endurance test. Moreover, transparent RRAM (TRRAM) based on AlN also performs reliably under four different harsh environmental conditions and 2 MeV proton irradiation fluences, ranging from 1011 to 1015 cm-2. These findings not only provide a guideline for TRRAM design, but also demonstrate the promising applicability of AlN TRRAM for future transparent harsh electronics.

  7. Field-effect transistor memories based on ferroelectric polymers

    Science.gov (United States)

    Zhang, Yujia; Wang, Haiyang; Zhang, Lei; Chen, Xiaomeng; Guo, Yu; Sun, Huabin; Li, Yun

    2017-11-01

    Field-effect transistors based on ferroelectrics have attracted intensive interests, because of their non-volatile data retention, rewritability, and non-destructive read-out. In particular, polymeric materials that possess ferroelectric properties are promising for the fabrications of memory devices with high performance, low cost, and large-area manufacturing, by virtue of their good solubility, low-temperature processability, and good chemical stability. In this review, we discuss the material characteristics of ferroelectric polymers, providing an update on the current development of ferroelectric field-effect transistors (Fe-FETs) in non-volatile memory applications. Program supported partially by the NSFC (Nos. 61574074, 61774080), NSFJS (No. BK20170075), and the Open Partnership Joint Projects of NSFC-JSPS Bilateral Joint Research Projects (No. 61511140098).

  8. Flash memories economic principles of performance, cost and reliability optimization

    CERN Document Server

    Richter, Detlev

    2014-01-01

    The subject of this book is to introduce a model-based quantitative performance indicator methodology applicable for performance, cost and reliability optimization of non-volatile memories. The complex example of flash memories is used to introduce and apply the methodology. It has been developed by the author based on an industrial 2-bit to 4-bit per cell flash development project. For the first time, design and cost aspects of 3D integration of flash memory are treated in this book. Cell, array, performance and reliability effects of flash memories are introduced and analyzed. Key performance parameters are derived to handle the flash complexity. A performance and array memory model is developed and a set of performance indicators characterizing architecture, cost and durability is defined.   Flash memories are selected to apply the Performance Indicator Methodology to quantify design and technology innovation. A graphical representation based on trend lines is introduced to support a requirement based pr...

  9. A Survey of Phase Change Memory Systems

    Institute of Scientific and Technical Information of China (English)

    夏飞; 蒋德钧; 熊劲; 孙凝晖

    2015-01-01

    As the scaling of applications increases, the demand of main memory capacity increases in order to serve large working set. It is difficult for DRAM (dynamic random access memory) based memory system to satisfy the memory capacity requirement due to its limited scalability and high energy consumption. Compared to DRAM, PCM (phase change memory) has better scalability, lower energy leakage, and non-volatility. PCM memory systems have become a hot topic of academic and industrial research. However, PCM technology has the following three drawbacks: long write latency, limited write endurance, and high write energy, which raises challenges to its adoption in practice. This paper surveys architectural research work to optimize PCM memory systems. First, this paper introduces the background of PCM. Then, it surveys research efforts on PCM memory systems in performance optimization, lifetime improving, and energy saving in detail, respectively. This paper also compares and summarizes these techniques from multiple dimensions. Finally, it concludes these optimization techniques and discusses possible research directions of PCM memory systems in future.

  10. Stochastic memory: getting memory out of noise

    Science.gov (United States)

    Stotland, Alexander; di Ventra, Massimiliano

    2011-03-01

    Memory circuit elements, namely memristors, memcapacitors and meminductors, can store information without the need of a power source. These systems are generally defined in terms of deterministic equations of motion for the state variables that are responsible for memory. However, in real systems noise sources can never be eliminated completely. One would then expect noise to be detrimental for memory. Here, we show that under specific conditions on the noise intensity memory can actually be enhanced. We illustrate this phenomenon using a physical model of a memristor in which the addition of white noise into the state variable equation improves the memory and helps the operation of the system. We discuss under which conditions this effect can be realized experimentally, discuss its implications on existing memory systems discussed in the literature, and also analyze the effects of colored noise. Work supported in part by NSF.

  11. Demonstration of Novel Sampling Techniques for Measurement of Turbine Engine Volatile and Non-Volatile Particulate Matter (PM) Emissions

    Science.gov (United States)

    2017-03-06

    WP-201317) Demonstration of Novel Sampling Techniques for Measurement of Turbine Engine Volatile and Non-volatile Particulate Matter (PM... Engine Volatile and Non-Volatile Particulate Matter (PM) Emissions 6. AUTHOR(S) E. Corporan, M. DeWitt, C. Klingshirn, M.D. Cheng, R. Miake-Lye, J. Peck...the performance and viability of two devices to condition aircraft turbine engine exhaust to allow the accurate measurement of total (volatile and non

  12. Identifying Non-Volatile Data Storage Areas: Unique Notebook Identification Information as Digital Evidence

    Directory of Open Access Journals (Sweden)

    Nikica Budimir

    2007-03-01

    Full Text Available The research reported in this paper introduces new techniques to aid in the identification of recovered notebook computers so they may be returned to the rightful owner. We identify non-volatile data storage areas as a means of facilitating the safe storing of computer identification information. A forensic proof of concept tool has been designed to test the feasibility of several storage locations identified within this work to hold the data needed to uniquely identify a computer. The tool was used to perform the creation and extraction of created information in order to allow the analysis of the non-volatile storage locations as valid storage areas capable of holding and preserving the data created within them.  While the format of the information used to identify the machine itself is important, this research only discusses the insertion, storage and ability to retain such information.

  13. Brain-like associative learning using a nanoscale non-volatile phase change synaptic device array

    Directory of Open Access Journals (Sweden)

    Sukru Burc Eryilmaz

    2014-07-01

    Full Text Available Recent advances in neuroscience together with nanoscale electronic device technology have resulted in huge interests in realizing brain-like computing hardwares using emerging nanoscale memory devices as synaptic elements. Although there has been experimental work that demonstrated the operation of nanoscale synaptic element at the single device level, network level studies have been limited to simulations. In this work, we demonstrate, using experiments, array level associative learning using phase change synaptic devices connected in a grid like configuration similar to the organization of the biological brain. Implementing Hebbian learning with phase change memory cells, the synaptic grid was able to store presented patterns and recall missing patterns in an associative brain-like fashion. We found that the system is robust to device variations, and large variations in cell resistance states can be accommodated by increasing the number of training epochs. We illustrated the tradeoff between variation tolerance of the network and the overall energy consumption, and found that energy consumption is decreased significantly for lower variation tolerance.

  14. Connexin31.1 deficiency in the mouse impairs object memory and modulates open-field exploration, acetylcholine esterase levels in the striatum, and cAMP response element-binding protein levels in the striatum and piriform cortex.

    Science.gov (United States)

    Dere, E; Zheng-Fischhöfer, Q; Viggiano, D; Gironi Carnevale, U A; Ruocco, L A; Zlomuzica, A; Schnichels, M; Willecke, K; Huston, J P; Sadile, A G

    2008-05-02

    Neuronal gap junctions in the brain, providing intercellular electrotonic signal transfer, have been implicated in physiological and behavioral correlates of learning and memory. In connexin31.1 (Cx31.1) knockout (KO) mice the coding region of the Cx31.1 gene was replaced by a LacZ reporter gene. We investigated the impact of Cx31.1 deficiency on open-field exploration, the behavioral response to an odor, non-selective attention, learning and memory performance, and the levels of memory-related proteins in the hippocampus, striatum and the piriform cortex. In terms of behavior, the deletion of the Cx31.1 coding DNA in the mouse led to increased exploratory behaviors in a novel environment, and impaired one-trial object recognition at all delays tested. Despite strong Cx31.1 expression in the peripheral and central olfactory system, Cx31.1 KO mice exhibited normal behavioral responses to an odor. We found increased levels of acetylcholine esterase (AChE) and cAMP response element-binding protein (CREB) in the striatum of Cx31.1 KO mice. In the piriform cortex the Cx31.1 KO mice had an increased heterogeneity of CREB expression among neurons. In conclusion, gap-junctions featuring the Cx31.1 protein might be involved in open-field exploration as well as object memory and modulate levels of AChE and CREB in the striatum and piriform cortex.

  15. Three-terminal resistive switching memory in a transparent vertical-configuration device

    International Nuclear Information System (INIS)

    Ungureanu, Mariana; Llopis, Roger; Casanova, Fèlix; Hueso, Luis E.

    2014-01-01

    The resistive switching phenomenon has attracted much attention recently for memory applications. It describes the reversible change in the resistance of a dielectric between two non-volatile states by the application of electrical pulses. Typical resistive switching memories are two-terminal devices formed by an oxide layer placed between two metal electrodes. Here, we report on the fabrication and operation of a three-terminal resistive switching memory that works as a reconfigurable logic component and offers an increased logic density on chip. The three-terminal memory device we present is transparent and could be further incorporated in transparent computing electronic technologies

  16. Potential of Mass Spectrometry in Developing Clinical Laboratory Biomarkers of Nonvolatiles in Exhaled Breath.

    Science.gov (United States)

    Beck, Olof; Olin, Anna-Carin; Mirgorodskaya, Ekaterina

    2016-01-01

    Exhaled breath contains nonvolatile substances that are part of aerosol particles of submicrometer size. These particles are formed and exhaled as a result of normal breathing and contain material from distal airways of the respiratory system. Exhaled breath can be used to monitor biomarkers of both endogenous and exogenous origin and constitutes an attractive specimen for medical investigations. This review summarizes the present status regarding potential biomarkers of nonvolatile compounds in exhaled breath. The field of exhaled breath condensate is briefly reviewed, together with more recent work on more selective collection procedures for exhaled particles. The relation of these particles to the surfactant in the terminal parts of the respiratory system is described. The literature on potential endogenous low molecular weight compounds as well as protein biomarkers is reviewed. The possibility to measure exposure to therapeutic and abused drugs is demonstrated. Finally, the potential future role and importance of mass spectrometry is discussed. Nonvolatile compounds exit the lung as aerosol particles that can be sampled easily and selectively. The clinical applications of potential biomarkers in exhaled breath comprise diagnosis of disease, monitoring of disease progress, monitoring of drug therapy, and toxicological investigations. © 2015 American Association for Clinical Chemistry.

  17. Stable isotopic carbon composition of apples and their subfractions--juice, seeds, sugars, and nonvolatile acids.

    Science.gov (United States)

    Lee, H S; Wrolstad, R E

    1988-01-01

    The 13C:12C ratios of 8 authentic apple juice samples and their subfractions were determined by mass spectrometry. Apples from Argentina, Mexico, New Zealand, and the United States were processed into juice; pulp was collected from the milled fruit and seeds were collected from the press-cake. Sugars, nonvolatile acids, and phenolics were isolated from the juice by treatment with ion-exchange resins and polyvinylpyrrolidone (PVPP). The mean value for all juice samples was -24.2% which is close to the values reported by other investigators. Juice from apples grown in Argentina, Mexico, and New Zealand did not differ from U.S. samples. The isotopic composition of the subfractions ranged from -22.0 to -31.0%. The values for the pulp were essentially the same as for juice. The sugar fraction was slightly less negative than the juice; the nonvolatile acid and phenolic fractions were more negative. The levels of nonvolatile acids and phenolics in apple juice are low, however, so these compounds contribute little to overall delta 13C values in juice.

  18. Supercritical fluid extraction of volatile and non-volatile compounds from Schinus molle L.

    Directory of Open Access Journals (Sweden)

    M. S. T. Barroso

    2011-06-01

    Full Text Available Schinus molle L., also known as pepper tree, has been reported to have antimicrobial, antifungal, anti-inflammatory, antispasmodic, antipyretic, antitumoural and cicatrizing properties. This work studies supercritical fluid extraction (SFE to obtain volatile and non-volatile compounds from the aerial parts of Schinus molle L. and the influence of the process on the composition of the extracts. Experiments were performed in a pilot-scale extractor with a capacity of 1 L at pressures of 9, 10, 12, 15 and 20 MPa at 323.15 K. The volatile compounds were obtained by CO2 supercritical extraction with moderate pressure (9 MPa, whereas the non-volatile compounds were extracted at higher pressure (12 to 20 MPa. The analysis of the essential oil was carried out by GC-MS and the main compounds identified were sabinene, limonene, D-germacrene, bicyclogermacrene, and spathulenol. For the non-volatile extracts, the total phenolic content was determined by the Folin-Ciocalteau method. Moreover, one of the goals of this study was to compare the experimental data with the simulated yields predicted by a mathematical model based on mass transfer. The model used requires three adjustable parameters to predict the experimental extraction yield curves.

  19. All-polymer bistable resistive memory device based on nanoscale phase-separated PCBM-ferroelectric blends

    KAUST Repository

    Khan, Yasser; Bhansali, Unnat Sampatraj; Cha, Dong Kyu; Alshareef, Husam N.

    2012-01-01

    All polymer nonvolatile bistable memory devices are fabricated from blends of ferroelectric poly(vinylidenefluoride-trifluoroethylene (P(VDF-TrFE)) and n-type semiconducting [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). The nanoscale phase

  20. Process Qualification Strategy for Advances Embedded Non Volatile Memory Technology : The Philips' 0.18um Embedded Flash Case

    NARCIS (Netherlands)

    Tao, Guoqiao; Scarpa, Andrea; van Dijk, Kitty; Kuper, Fred G.

    2003-01-01

    A qualification strategy for advanced embedded non-volatile memory technology has been revealed. This strategy consists of: a thorough understanding of the requirements, extensive use and frequent update of the FMEA (failure mode effect analysis), a qualification plan with excellent coverage of all

  1. Static memory devices

    NARCIS (Netherlands)

    2012-01-01

    A semiconductor memory device includes n-wells (22) and p-wells (24) used to make up a plurality of memory cell elements (40). The n-wells (22) and p-5 wells (24) can be back-biased to improve reading and writing performance. One of the n-wells and p-wells can be globally biased while the other one

  2. Quantum memory Quantum memory

    Science.gov (United States)

    Le Gouët, Jean-Louis; Moiseev, Sergey

    2012-06-01

    Interaction of quantum radiation with multi-particle ensembles has sparked off intense research efforts during the past decade. Emblematic of this field is the quantum memory scheme, where a quantum state of light is mapped onto an ensemble of atoms and then recovered in its original shape. While opening new access to the basics of light-atom interaction, quantum memory also appears as a key element for information processing applications, such as linear optics quantum computation and long-distance quantum communication via quantum repeaters. Not surprisingly, it is far from trivial to practically recover a stored quantum state of light and, although impressive progress has already been accomplished, researchers are still struggling to reach this ambitious objective. This special issue provides an account of the state-of-the-art in a fast-moving research area that makes physicists, engineers and chemists work together at the forefront of their discipline, involving quantum fields and atoms in different media, magnetic resonance techniques and material science. Various strategies have been considered to store and retrieve quantum light. The explored designs belong to three main—while still overlapping—classes. In architectures derived from photon echo, information is mapped over the spectral components of inhomogeneously broadened absorption bands, such as those encountered in rare earth ion doped crystals and atomic gases in external gradient magnetic field. Protocols based on electromagnetic induced transparency also rely on resonant excitation and are ideally suited to the homogeneous absorption lines offered by laser cooled atomic clouds or ion Coulomb crystals. Finally off-resonance approaches are illustrated by Faraday and Raman processes. Coupling with an optical cavity may enhance the storage process, even for negligibly small atom number. Multiple scattering is also proposed as a way to enlarge the quantum interaction distance of light with matter. The

  3. Multi-bits memory cell using degenerated magnetic states in a synthetic antiferromagnetic reference layer

    International Nuclear Information System (INIS)

    Fukushima, Akio; Yakushiji, Kay; Konoto, Makoto; Kubota, Hitoshi; Imamura, Hiroshi; Yuasa, Shinji

    2016-01-01

    We newly developed a magnetic memory cell having multi-bit function. The memory cell composed of a perpendicularly magnetized magnetic tunnel junction (MB-pMTJ) and a synthetic antiferromagnetic reference layer. The multi-bit function is realized by combining the freedom of states of the magnetic free layer and that in the antiferromagnetically coupled reference layer. The structure of the reference layer is (FeB/Ta/[Co/Pt]_3)/Ru/([Co/Pt]_6); the top and the bottom layers are coupled through Ru layer where the reference layer has two degrees of freedom of a head-to-head and a bottom-to-bottom magnetic configuration. A four-state memory cell is realized by combination of both degrees of freedom. The states in the reference layer however is hardly detected by the total resistance of MB-pMTJ, because the magnetoresistance effect in the reference layer is negligibly small. That implies that the resistance values for the different states in the reference layer are degenerated. On the other hand, the two different states in the reference layer bring different stray fields to the free layer, which generate two different minor loop with different switching fields. Therefore, the magnetic states in the reference layer can be differentiated by the two-step reading, before and after applying the appropriately pulsed magnetic field which can identify the initial state in the reference layer. This method is similar to distinguishing different magnetic states in an in-plane magnetized spin-valve element. We demonstrated that four different states in the MB-pMTJ can be distinguished by the two-step read-out. The important feature of the two-step reading is a practically large operation margins (large resistance change in reading) which is equal to that of a single MTJ. Even though the two-step reading is a destructive method by which 50% of the magnetic state is changed, this MB-pMTJ is promising for high density non-volatile memory cell with a minor cost of operation speed

  4. Introduction to magnetic random-access memory

    CERN Document Server

    Dieny, Bernard; Lee, Kyung-Jin

    2017-01-01

    Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, low energy dissipation, fast switching speed, radiation hardness, and durability. Although toggle-MRAM is currently a commercial product, it is clear that future developments in MRAM will be based on spin-transfer torque, which makes use of electrons’ spin angular momentum instead of their charge. MRAM will require an amalgamation of magnetics and microelectronics technologies. However, researchers and developers in magnetics and in microelectronics attend different technical conferences, publish in different journals, use different tools, and have different backgrounds in condensed-matter physics, electrical engineering, and materials science. This book is an introduction to MRAM for microelectronics engineers written by specialists in magnetic mat rials and devices. It presents the bas...

  5. Memory and pressure studies in Na{sub x}CoO{sub 2} cobaltites

    Energy Technology Data Exchange (ETDEWEB)

    Garbarino, G; Bouvier, P; Crichton, W A; Mezouar, M [European Synchrotron Radiation Facility, Grenoble (France); Regueiro, M Nunez; Lejay, P [MCBT, Institut Neel, Grenoble (France); Armand, M [LRCS, Universite Picardie Jules-Verne Amiens, Amiens (France); Foo, M L; Cava, R J, E-mail: gaston.garbarino@esrf.f [Department of Chemistry and Materials Institute, Princeton University, New Jersey (United States)

    2009-03-01

    We present a detailed study on the memory effect results in Na{sub 0.5} paragraph 5CoO{sub 2} single crystals. We analyze the temperature dependence of the nonvolatile current-pulse-induced resistance memory state. These results allow us to have more insight in the mobility of Na{sup +} ions induced by current and their effect on the memory effect. We also developed X-ray diffraction studies under pressure at ambient temperature in the N{sub a0.5}CoO{sub 2} powder compound. An orthorhombic to hexagonal phase transition was observed at 9GPa. This transition can be explained taking into account the Na ions displacement between two allowed positions. These structural results allow us to confirm that the non-volatile resistive commutation can be interpreted by the displacement of the Na ions induced by the current pulses.

  6. Memory and pressure studies in NaxCoO2 cobaltites

    International Nuclear Information System (INIS)

    Garbarino, G; Bouvier, P; Crichton, W A; Mezouar, M; Regueiro, M Nunez; Lejay, P; Armand, M; Foo, M L; Cava, R J

    2009-01-01

    We present a detailed study on the memory effect results in Na 0.5 paragraph 5CoO 2 single crystals. We analyze the temperature dependence of the nonvolatile current-pulse-induced resistance memory state. These results allow us to have more insight in the mobility of Na + ions induced by current and their effect on the memory effect. We also developed X-ray diffraction studies under pressure at ambient temperature in the N a0.5 CoO 2 powder compound. An orthorhombic to hexagonal phase transition was observed at 9GPa. This transition can be explained taking into account the Na ions displacement between two allowed positions. These structural results allow us to confirm that the non-volatile resistive commutation can be interpreted by the displacement of the Na ions induced by the current pulses.

  7. Optimization of Phase Change Memory with Thin Metal Inserted Layer on Material Properties

    Science.gov (United States)

    Harnsoongnoen, Sanchai; Sa-Ngiamsak, Chiranut; Siritaratiwat, Apirat

    This works reports, for the first time, the thorough study and optimisation of Phase Change Memory (PCM) structure with thin metal inserted chalcogenide via electrical resistivity (ρ) using finite element modeling. PCM is one of the best candidates for next generation non-volatile memory. It has received much attention recently due to its fast write speed, non-destructive readout, superb scalability, and great compatibility with current silicon-based mass fabrication. The setback of PCM is a high reset current typically higher than 1mA based on 180nm lithography. To reduce the reset current and to solve the over-programming failure, PCM with thin metal inserted chalcogenide (bottom chalcogenide/metal inserted/top chalcogenide) structure has been proposed. Nevertheless, reports on optimisation of the electrical resistivity using the finite element method for this new PCM structure have never been published. This work aims to minimize the reset current of this PCM structure by optimizing the level of the electrical resistivity of the PCM profile using the finite element approach. This work clearly shows that PCM characteristics are strongly affected by the electrical resistivity. The 2-D simulation results reveal clearly that the best thermal transfer of and self-joule-heating at the bottom chalcogenide layer can be achieved under conditions; ρ_bottom chalcogenide > ρ_metal inserted > ρ_top chalcogenide More specifically, the optimized electrical resistivity of PCMTMI is attained with ρ_top chalcogenide: ρ_metal inserted: ρ_bottom chalcogenide ratio of 1:6:16 when ρ_top chalcogenide is 10-3 Ωm. In conclusion, high energy efficiency can be obtained with the reset current as low as 0.3mA and with high speed operation of less than 30ns.

  8. Finite element modeling of indentation-induced superelastic effect using a three-dimensional constitutive model for shape memory materials with plasticity

    International Nuclear Information System (INIS)

    Zhang, Yijun; Cheng, Yang-Tse; Grummon, David S.

    2007-01-01

    Indentation-induced shape memory and superelastic effects are recently discovered thermo-mechanical behaviors that may find important applications in many areas of science and engineering. Theoretical understanding of these phenomena is challenging because both martensitic phase transformation and slip plasticity exist under complex contact loading conditions. In this paper, we develop a three-dimensional constitutive model of shape memory alloys with plasticity. Spherical indentation-induced superelasticity in a NiTi shape memory alloy was simulated and compared to experimental results on load-displacement curves and recovery ratios. We show that shallow indents have complete recovery upon unloading, where the size of the phase transformation region is about two times the contact radius. Deep indents have only partial recovery when plastic deformation becomes more prevalent in the indent-affected zone

  9. Embedded Memory Hierarchy Exploration Based on Magnetic Random Access Memory

    Directory of Open Access Journals (Sweden)

    Luís Vitório Cargnini

    2014-08-01

    Full Text Available Static random access memory (SRAM is the most commonly employed semiconductor in the design of on-chip processor memory. However, it is unlikely that the SRAM technology will have a cell size that will continue to scale below 45 nm, due to the leakage current that is caused by the quantum tunneling effect. Magnetic random access memory (MRAM is a candidate technology to replace SRAM, assuming appropriate dimensioning given an operating threshold voltage. The write current of spin transfer torque (STT-MRAM is a known limitation; however, this has been recently mitigated by leveraging perpendicular magnetic tunneling junctions. In this article, we present a comprehensive comparison of spin transfer torque-MRAM (STT-MRAM and SRAM cache set banks. The non-volatility of STT-MRAM allows the definition of new instant on/off policies and leakage current optimizations. Through our experiments, we demonstrate that STT-MRAM is a candidate for the memory hierarchy of embedded systems, due to the higher densities and reduced leakage of MRAM.We demonstrate that adopting STT-MRAM in L1 and L2 caches mitigates the impact of higher write latencies and increased current draw due to the use of MRAM. With the correct system-on-chip (SoC design, we believe that STT-MRAM is a viable alternative to SRAM, which minimizes leakage current and the total power consumed by the SoC.

  10. Switching behavior of resistive change memory using oxide nanowires

    Science.gov (United States)

    Aono, Takashige; Sugawa, Kosuke; Shimizu, Tomohiro; Shingubara, Shoso; Takase, Kouichi

    2018-06-01

    Resistive change random access memory (ReRAM), which is expected to be the next-generation nonvolatile memory, often has wide switching voltage distributions due to many kinds of conductive filaments. In this study, we have tried to suppress the distribution through the structural restriction of the filament-forming area using NiO nanowires. The capacitor with Ni metal nanowires whose surface is oxidized showed good switching behaviors with narrow distributions. The knowledge gained from our study will be very helpful in producing practical ReRAM devices.

  11. Metabolomic and elemental profiling of melon fruit quality as affected by genotype and environment

    NARCIS (Netherlands)

    Bernillon, S.; Biais, B.; Deborde, C.; Maucort, M.; Cabasson, C.; Gibon, Y.; Hansen, T.; Husted, S.; Vos, de R.C.H.; Mumm, R.; Jonker, H.; Ward, J.L.; Miller, S.J.; Baker, J.M.; Burger, J.; Tadmor, Y.; Beale, M.H.; Schjoerring, J.K.; Schaffer, A.; Rolin, D.; Hall, R.D.; Moing, A.

    2013-01-01

    Melon (Cucumis melo L.) is a global crop in terms of economic importance and nutritional quality. The aim of this study was to explore the variability in metabolite and elemental composition of several commercial varieties of melon in various environmental conditions. Volatile and non-volatile

  12. Stochastic memory: Memory enhancement due to noise

    Science.gov (United States)

    Stotland, Alexander; di Ventra, Massimiliano

    2012-01-01

    There are certain classes of resistors, capacitors, and inductors that, when subject to a periodic input of appropriate frequency, develop hysteresis loops in their characteristic response. Here we show that the hysteresis of such memory elements can also be induced by white noise of appropriate intensity even at very low frequencies of the external driving field. We illustrate this phenomenon using a physical model of memory resistor realized by TiO2 thin films sandwiched between metallic electrodes and discuss under which conditions this effect can be observed experimentally. We also discuss its implications on existing memory systems described in the literature and the role of colored noise.

  13. Determination of non-volatile radiolytic compounds in ethylene co-vinyl alcohol

    International Nuclear Information System (INIS)

    Kothapalli, A.; Sadler, G.

    2003-01-01

    The use of ionizing radiation on food contact polymers is increasing due to the critical role of the package in holding or containing the irradiated foods [Food Add. Contam. 18(6) (2001) 475]. Irradiation benefits the food if properly applied and the food is pre-packaged prior to irradiation to protect it from subsequent recontamination. The United States Food and Drug Administration (USFDA) has approved the use of ionizing radiation within the dosage range of 0-60 kGy on limited films since the 1960s [USFDA 21CFR 179.45]. The obstacle in the way of approval of additional polymers is that FDA fears that these materials may undergo changes during irradiation producing toxic radiolytic fragments. Ethylene co-vinyl alcohol (EVOH), which is often used in food applications, is not approved by the FDA for pre-packaged irradiated foods. The present work examines the non-volatile radiolytic compounds, which may be formed due to exposure to gamma irradiation at the dosage levels of 3 and 10 kGy versus a non-radiated control. Irradiated EVOH is subjected to extraction with 95:5 ethanol and water (by volume) as the food simulating solvent (FSS) for a period of 10 days at 40 deg. C, which models the amount of radiolytic compound a food would extract in 1 year [USFDA Chemistry Requirement for Food Contact Notification]. The FSS is then analyzed for the presence of non-volatile compounds using advanced liquid chromatographic techniques. The chromatograms obtained from different dosages show that non-volatile radiolytic compounds are not formed in EVOH and it would, therefore be in compliance with safety demands of USFDA [Available at: http://www.cfsan.fda.gov/~dms/opa-guid.htmlref and http://www.access.gpo.gov/nara/cfr/cfr-table-search.htmlpage1

  14. Determination of non-volatile radiolytic compounds in ethylene co-vinyl alcohol

    Science.gov (United States)

    Kothapalli, A.; Sadler, G.

    2003-08-01

    The use of ionizing radiation on food contact polymers is increasing due to the critical role of the package in holding or containing the irradiated foods [Food Add. Contam. 18(6) (2001) 475]. Irradiation benefits the food if properly applied and the food is pre-packaged prior to irradiation to protect it from subsequent recontamination. The United States Food and Drug Administration (USFDA) has approved the use of ionizing radiation within the dosage range of 0-60 kGy on limited films since the 1960s [USFDA 21CFR 179.45]. The obstacle in the way of approval of additional polymers is that FDA fears that these materials may undergo changes during irradiation producing toxic radiolytic fragments. Ethylene co-vinyl alcohol (EVOH), which is often used in food applications, is not approved by the FDA for pre-packaged irradiated foods. The present work examines the non-volatile radiolytic compounds, which may be formed due to exposure to gamma irradiation at the dosage levels of 3 and 10 kGy versus a non-radiated control. Irradiated EVOH is subjected to extraction with 95:5 ethanol and water (by volume) as the food simulating solvent (FSS) for a period of 10 days at 40 °C, which models the amount of radiolytic compound a food would extract in 1 year [USFDA Chemistry Requirement for Food Contact Notification]. The FSS is then analyzed for the presence of non-volatile compounds using advanced liquid chromatographic techniques. The chromatograms obtained from different dosages show that non-volatile radiolytic compounds are not formed in EVOH and it would, therefore be in compliance with safety demands of USFDA [Available at: http://www.cfsan.fda.gov/~dms/opa-guid.html#ref and http://www.access.gpo.gov/nara/cfr/cfr-table-search.html#page1].

  15. Memory architecture

    NARCIS (Netherlands)

    2012-01-01

    A memory architecture is presented. The memory architecture comprises a first memory and a second memory. The first memory has at least a bank with a first width addressable by a single address. The second memory has a plurality of banks of a second width, said banks being addressable by components

  16. Release and nonvolatile operation of carbon nanotube nanorelay by resonant vibration

    Energy Technology Data Exchange (ETDEWEB)

    Kagota, Tatsuya; Takei, Kuniharu; Arie, Takayuki; Akita, Seiji, E-mail: akita@pe.osakafu-u.ac.jp [Department of Physics and Electronics, Osaka Prefecture University, 1-1 Gakuen-cho, Nakaku, Sakai, Osaka 599-8531 (Japan); Nagataki, Atsuko [Department of Physics and Electronics, Osaka Prefecture University, 1-1 Gakuen-cho, Nakaku, Sakai, Osaka 599-8531 (Japan); Materials Analysis Research Center, KRI, Inc., Osaka 554-0051 (Japan)

    2013-11-11

    We investigated the release of a stuck carbon nanotube (CNT) cantilever beam in nanorelay applications using a nano-manipulator. Even with strong adhesion induced by electrostatic attraction that is 100 times stronger than the van der Waals interaction, successful release of a nanotube arm from a stuck state was realized by the application of a resonant vibration to the stuck CNT arm. Furthermore, nonvolatile operation of the nanotube nanorelay was demonstrated by the application of the resonant vibration to the stuck CNT arm.

  17. Investigation of non-volatile additives on the process of distillation of hydrocarbon mixtures

    Directory of Open Access Journals (Sweden)

    М.Б. Степанов

    2009-02-01

    Full Text Available  The given results of researches of influence of nonvolatile additives on processes of distillation of individual hydrocarbons and their mixes, including petroleum and mineral oil. With the help of the developed computer system of the continuous control of distillation it is shown, that at the presence of small amounts of the additive decrease of temperature of the beginning of boiling of hydrocarbons is observed, their speeds of banish and exits of light fuel mineral oil grow during initial oil refining

  18. MASMA: a versatile multifunctional unit (gated window amplifier, analog memory, and height-to-time converter); Element multifonctionnel M.A.S.M.A. (module amplificateur a seuil, memoire analogique et convertisseur amplitude-temps)

    Energy Technology Data Exchange (ETDEWEB)

    Goursky, V.; Thenes, P. [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

    1969-07-01

    This multipurpose unit is designed to accomplish one of the following functions: - gated window amplifier, - Analog memory and - Amplitude-to-time converter. The first function is mainly devoted to improve the poor resolution of pulse-height analyzers with a small number of channels. The analog memory, a new function in the standard range of plug-in modules, is capable of performing a number of operations: 1) fixed delay, or variable delay dependent on an external parameter (application to the analog processing of non-coincident pulses), 2) de-randomiser to increase the efficiency of the pulse height analysis in a spectrometry experiment, 3) linear multiplexer to allow an analyser to serve as many spectrometry devices as memory elements that it possesses. Associated with a coding scaler, this unit, if used as a amplitude-to-time converter, constitutes a Wilkinson A.D.C with a capability of 10 bits (or more) and with a 100 MHz clock frequency. (authors) [French] Le present element est concu pour etre utilise dans l'un des modes de fonctionnement suivants: - amplificateur a seuil avec porte, - memoire analogique, - convertisseur amplitude-temps. La fonction amplificateur a seuil est destinee principalement a remedier a la resolution insuffisante de certains analyseurs d'amplitude possedant un faible nombre de canaux. La fonction memoire analogique est une fonction qui n'existe pas encore dans la gamme d'elements standardises. Elle peut trouver de nombreuses applications; a titre d'exemple, citons: 1) element de retard fixe ou dependant d'un parametre externe (application au calcul analogique portant sur les impulsions), 2) memoire-tampon: placee devant un analyseur, elle augmente l'efficacite d'analyse d'une chaine de spectrometrie, 3) multiplexeur analogique, permettant a un seul analyseur de desservir autant de voies de spectrometrie qu'il possede de memoires. En fonction convertisseur amplitude-temps, ce tiroir

  19. Soluble dendrimers europium(III) β-diketonate complex for organic memory devices

    International Nuclear Information System (INIS)

    Wang Binbin; Fang Junfeng; Li Bin; You Han; Ma Dongge; Hong Ziruo; Li Wenlian; Su Zhongmin

    2008-01-01

    We report the synthesis of a soluble dendrimers europium(III) complex, tris(dibenzoylmethanato)(1,3,5-tris[2-(2'-pyridyl) benzimidazoly]methylbenzene)-europium(III), and its application in organic electrical bistable memory device. Excellent stability that ensured more than 10 6 write-read-erase-reread cycles has been performed in ambient conditions without current-induced degradation. High-density, low-cost memory, good film-firming property, fascinating thermal and morphological stability allow the application of the dendrimers europium(III) complex as an active medium in non-volatile memory devices

  20. Solution-processed flexible NiO resistive random access memory device

    Science.gov (United States)

    Kim, Soo-Jung; Lee, Heon; Hong, Sung-Hoon

    2018-04-01

    Non-volatile memories (NVMs) using nanocrystals (NCs) as active materials can be applied to soft electronic devices requiring a low-temperature process because NCs do not require a heat treatment process for crystallization. In addition, memory devices can be implemented simply by using a patterning technique using a solution process. In this study, a flexible NiO ReRAM device was fabricated using a simple NC patterning method that controls the capillary force and dewetting of a NiO NC solution at low temperature. The switching behavior of a NiO NC based memory was clearly observed by conductive atomic force microscopy (c-AFM).

  1. Migration of residual nonvolatile and inorganic compounds from recycled post-consumer PET and HDPE

    Energy Technology Data Exchange (ETDEWEB)

    Dutra, Camila; Reyes, Felix G.R., E-mail: reyesfgr@fea.unicamp.br [Universidade de Campinas (UNICAMP), SP (Brazil). Escola de Engenharia dos Alimentos. Dept. de Ciencias dos Alimentos; Freire, Maria Teresa de A. [Universidade de Sao Paulo (USP), Pirassununga, SP (Brazil). Fac. de Ciencia Animal e Engenharia dos Alimentos. Dept. de Engenharia dos Alimentos; Nerin, Cristina; Bentayeb, Karim; Rodriguez-Lafuente, Angel; Aznar, Margarita [Dept. of Analytical Chemistry, Arago Inst. of Engineering Research, University of Zaragoza (Spain)

    2014-04-15

    Migration of nonvolatile and inorganic residual compounds from post-consumer recycled polyethylene terephthalate (PET) submitted to cleaning processes for subsequent production of materials intended to food contact, as well as from multilayer packaging material containing post-consumer recycled high-density polyethylene (HDPE) was determined. Tests were carried out using food simulant. Nonvolatile organic contaminants from PET, determined by liquid chromatography-mass spectrometry (UPLC-QqQ/MS), showed significant migration reduction as consequence of the more complex cleaning technologies applied. However, contaminants not allowed by Brazilian and European Union regulations were identified even in deep cleaning samples. Results from multilayer HDPE showed a greater number of contaminants when compared to recycled pellets. Inorganic contaminants, determined by inductively coupled plasma mass spectrometry were below the acceptable levels. Additional studies for identification and quantitation of unknown molecules which were not possible to identify in this study by UPLC-QqQ/MS are required to ascertain the safety of using post-consumer recycled packaging material. (author)

  2. Properties of nonvolatile and antibacterial bioboard produced from bamboo macromolecules by hot pressing

    Directory of Open Access Journals (Sweden)

    Shengbo Ge

    2018-03-01

    Full Text Available Employing the antibacterial property of industrial bamboo vinegar (IBV and the photocatalytic degradation of TiO2, bamboo macromolecules were pretreated and processed into nonvolatile and antibacterial bio board (NVABB. The NVABB was then analyzed by conducting Fourier-transform infrared spectroscopy, thermogravimetric analysis and differential thermal analysis. Results show that NVABB samples had average density of 0.96 g/cm3, which is appropriate for application. In terms of physical and mechanical properties, the best NVABB sample obtained from IBV, TiO2 and bamboo had an IBV pretreatment time of 10 min, 2% TiO2 and 1% bamboo charcoal. Fourier-transform infrared spectroscopy demonstrated that optimum conditions for hot pressing were a temperature of 170 °C, duration of 15 min and the addition of IBV and TiO2. Thermogravimetric analysis/differential thermal analysis curves suggest that the thermal degradation of NVABB was less than that of bamboo and that hot pressing obviously increased the thermal stability of HDBB samples. Analysis of the antimicrobial effect revealed that IBV pretreatment improves the antibacterial property of NVABB. Keywords: Industrial bamboo vinegar, Nonvolatile and antibacterial bio board, Bamboo macromolecules, Fourier-transform infrared spectroscopy, Thermogravimetric analysis/differential thermal analysis

  3. Interlaboratory study of a method for determining nonvolatile organic carbon in aquifer materials

    Science.gov (United States)

    Caughey, M.E.; Barcelona, M.J.; Powell, R.M.; Cahill, R.A.; Gron, C.; Lawrenz, D.; Meschi, P.L.

    1995-01-01

    The organic carbon fraction in aquifer materials exerts a major influence on the subsurface mobilities of organic and organic-associated contaminants. The spatial distribution of total organic carbon (TOC) in aquifer materials must be determined before the transport of hydrophobic organic pollutants in aquifers can be modeled accurately. Previous interlaboratory studies showed that it is difficult to measure TOC concentrations 1%. We have tested a new analytical method designed to improve the accuracy and precision of nonvolatile TOC quantitation in geologic materials that also contain carbonate minerals. Four authentic aquifer materials and one NIST standard reference material were selected as test materials for a blind collaborative study. Nonvolatile TOC in these materials ranged from 0.05 to 1.4%, while TIC ranged from 0.46 to 12.6%. Sample replicates were digested with sulfurous acid, dried at 40??C, and then combusted at 950??C using LECO or UIC instruments. For the three test materials that contained >2% TIC, incomplete acidification resulted in a systematic positive bias of TOC values reported by five of the six laboratories that used the test method. Participants did not have enough time to become proficient with the new method before they analyzed the test materials. A seventh laboratory successfully used an alternative method that analyzed separate liquid and solid fractions of the acidified sample residues. ?? 1995 Springer-Verlag.

  4. Volatiles and Nonvolatiles in Flourensia campestris Griseb. (Asteraceae), How Much Do Capitate Glandular Trichomes Matter?

    Science.gov (United States)

    Piazza, Leonardo A; López, Daniela; Silva, Mariana P; López Rivilli, Marisa J; Tourn, Mónica G; Cantero, Juan J; Scopel, Ana L

    2018-03-01

    The distribution and ultrastructure of capitate glandular trichomes (GTs) in Flourensia species (Asteraceae) have been recently elucidated, but their metabolic activity and potential biological function remain unexplored. Selective nonvolatile metabolites from isolated GTs were strikingly similar to those found on leaf surfaces. The phytotoxic allelochemical sesquiterpene (-)-hamanasic acid A ((-)-HAA) was the major constituent (ca. 40%) in GTs. Although GTs are quaternary ammonium compounds (QACs)-accumulating species, glycine betaine was not found in GTs; it was only present in the leaf mesophyll. Two (-)-HAA accompanying surface secreted products: compounds 4-hydroxyacetophenone (piceol; 1) and 2-hydroxy-5-methoxyacetophenone (2), which were isolated and fully characterized (GC/MS, NMR), were present in the volatiles found in GTs. The essential oils of fresh leaves revealed ca. 33% monoterpenes, 26% hydrocarbon- and 30% oxygenated sesquiterpenes, most of them related to cadinene and bisabolene derivatives. Present results suggest a main role of GTs in determining the volatile and nonvolatile composition of F. campestris leaves. Based on the known activities of the compounds identified, it can be suggested that GTs in F. campestris would play key ecological functions in plant-pathogen and plant-plant interactions. In addition, the strikingly high contribution of compounds derived from cadinene and bisabolene pathways, highlights the potential of this species as a source of high-valued bioproducts. © 2018 Wiley-VHCA AG, Zurich, Switzerland.

  5. Leakage current characteristics of the multiple metal alloy nanodot memory

    International Nuclear Information System (INIS)

    Lee, Gae Hun; Lee, Jung Min; Yang, Hyung Jun; Song, Yun Heub; Bea, Ji Chel; Tanaka, Tetsu

    2010-01-01

    The leakage current characteristics of a multiple metal alloy nanodot device for a nonvolatile random access memory using FePt materials are investigated. Several annealing conditions are evaluated and optimized to suppress the leakage current and to better the memory characterisctics. This work confirmed that the annealing condition of 700 .deg. C in a high vacuum ambience (under 1 x 10 -5 Pa) simultaneously provided good cell characteristics from a high dot density of over 1 x 10 13 /cm 2 and a low leakage current. In addition, a smaller nanodot diameter was found to give a lower leakage current for the multiple nanodot memory. Finally, for the proposed annealing condition, the quadruple FePt multiple nanodot memory with a 2-nm dot diameter provided good leakage current characteristics, showing a threshold voltage shift of under 5% at an initial retention stage of 1000 sec.

  6. Results from On-Orbit Testing of the Fram Memory Test Experiment on the Fastsat Micro-Satellite

    Science.gov (United States)

    MacLeod, Todd C.; Sims, W. Herb; Varnavas, Kosta A.; Ho, Fat D.

    2011-01-01

    NASA is planning on going beyond Low Earth orbit with manned exploration missions. The radiation environment for most Low Earth orbit missions is harsher than at the Earth's surface but much less harsh than deep space. Development of new electronics is needed to meet the requirements of high performance, radiation tolerance, and reliability. The need for both Volatile and Non-volatile memory has been identified. Emerging Non-volatile memory technologies (FRAM, C-RAM,M-RAM, R-RAM, Radiation Tolerant FLASH, SONOS, etc.) need to be investigated for use in Space missions. An opportunity arose to fly a small memory experiment on a high inclination satellite (FASTSAT). An off-the-shelf 512K Ramtron FRAM was chosen to be tested in the experiment.

  7. Logic computation in phase change materials by threshold and memory switching.

    Science.gov (United States)

    Cassinerio, M; Ciocchini, N; Ielmini, D

    2013-11-06

    Memristors, namely hysteretic devices capable of changing their resistance in response to applied electrical stimuli, may provide new opportunities for future memory and computation, thanks to their scalable size, low switching energy and nonvolatile nature. We have developed a functionally complete set of logic functions including NOR, NAND and NOT gates, each utilizing a single phase-change memristor (PCM) where resistance switching is due to the phase transformation of an active chalcogenide material. The logic operations are enabled by the high functionality of nanoscale phase change, featuring voltage comparison, additive crystallization and pulse-induced amorphization. The nonvolatile nature of memristive states provides the basis for developing reconfigurable hybrid logic/memory circuits featuring low-power and high-speed switching. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Radiation-hardened MRAM-based LUT for non-volatile FPGA soft error mitigation with multi-node upset tolerance

    Science.gov (United States)

    Zand, Ramtin; DeMara, Ronald F.

    2017-12-01

    In this paper, we have developed a radiation-hardened non-volatile lookup table (LUT) circuit utilizing spin Hall effect (SHE)-magnetic random access memory (MRAM) devices. The design is motivated by modeling the effect of radiation particles striking hybrid complementary metal oxide semiconductor/spin based circuits, and the resistive behavior of SHE-MRAM devices via established and precise physics equations. The models developed are leveraged in the SPICE circuit simulator to verify the functionality of the proposed design. The proposed hardening technique is based on using feedback transistors, as well as increasing the radiation capacity of the sensitive nodes. Simulation results show that our proposed LUT circuit can achieve multiple node upset (MNU) tolerance with more than 38% and 60% power-delay product improvement as well as 26% and 50% reduction in device count compared to the previous energy-efficient radiation-hardened LUT designs. Finally, we have performed a process variation analysis showing that the MNU immunity of our proposed circuit is realized at the cost of increased susceptibility to transistor and MRAM variations compared to an unprotected LUT design.

  9. Multifunctional BiFeO{sub 3}/TiO{sub 2} nano-heterostructure: Photo-ferroelectricity, rectifying transport, and nonvolatile resistive switching property

    Energy Technology Data Exchange (ETDEWEB)

    Sarkar, Ayan; Khan, Gobinda Gopal, E-mail: gobinda.gk@gmail.com [Centre for Research in Nanoscience and Nanotechnology, University of Calcutta, Technology Campus, Block JD2, Sector III, Salt Lake City, Kolkata 700 098 (India); Chaudhuri, Arka [Department of Condensed Matter Physics and Material Sciences, S. N. Bose National Centre for Basic Sciences, Block JD, Sector III, Salt Lake City, Kolkata 700 098 (India); Department of Applied Science, Haldia Institute of Technology, Haldia 721657, Purba Medinipur, West Bengal (India); Das, Avishek [Department of Electronic Science, University of Calcutta, 92 APC Road, Kolkata 700009 (India); Mandal, Kalyan [Department of Condensed Matter Physics and Material Sciences, S. N. Bose National Centre for Basic Sciences, Block JD, Sector III, Salt Lake City, Kolkata 700 098 (India)

    2016-01-18

    Multifunctional BiFeO{sub 3} nanostructure anchored TiO{sub 2} nanotubes are fabricated by coupling wet chemical and electrochemical routes. BiFeO{sub 3}/TiO{sub 2} nano-heterostructure exhibits white-light-induced ferroelectricity at room temperature. Studies reveal that the photogenerated electrons trapped at the domain/grain boundaries tune the ferroelectric polarization in BiFeO{sub 3} nanostructures. The photon controlled saturation and remnant polarization opens up the possibility to design ferroelectric devices based on BiFeO{sub 3.} The nano-heterostructure also exhibits substantial photovoltaic effect and rectifying characteristics. Photovoltaic property is found to be correlated with the ferroelectric polarization. Furthermore, the nonvolatile resistive switching in BiFeO{sub 3}/TiO{sub 2} nano-heterostructure has been studied, which demonstrates that the observed resistive switching is most likely caused by the electric-field-induced carrier injection/migration and trapping/detrapping process at the hetero-interfaces. Therefore, BiFeO{sub 3}/TiO{sub 2} nano-heterostructure coupled with logic, photovoltaics and memory characteristics holds promises for long-term technological applications in nanoelectronics devices.

  10. Children's episodic memory.

    Science.gov (United States)

    Ghetti, Simona; Lee, Joshua

    2011-07-01

    Episodic memory develops during childhood and adolescence. This trajectory depends on several underlying processes. In this article, we first discuss the development of the basic binding processes (e.g., the processes by which elements are bound together to form a memory episode) and control processes (e.g., reasoning and metamemory processes) involved in episodic remembering. Then, we discuss the role of these processes in false-memory formation. In the subsequent sections, we examine the neural substrates of the development of episodic memory. Finally, we discuss atypical development of episodic memory. As we proceed through the article, we suggest potential avenues for future research. WIREs Cogni Sci 2011 2 365-373 DOI: 10.1002/wcs.114 For further resources related to this article, please visit the WIREs website. Copyright © 2010 John Wiley & Sons, Ltd.

  11. Dietary exposure to volatile and non-volatile N-nitrosamines from processed meat products in Denmark

    DEFF Research Database (Denmark)

    Herrmann, Susan Strange; Duedahl-Olesen, Lene; Christensen, Tue

    2015-01-01

    the carcinogenicity for the majority of the non-volatile NA (NVNA) remains to be elucidated. Danish adults (15–75 years) and children (4–6 years) consume 20 g and 16 g of processed meat per day (95th percentile), respectively. The consumption is primarily accounted for by sausages, salami, pork flank (spiced...

  12. Graphene quantum dot (GQD)-induced photovoltaic and photoelectric memory elements in a pentacene/GQD field effect transistor as a probe of functional interface

    Science.gov (United States)

    Kim, Youngjun; Cho, Seongeun; Kim, Hyeran; Seo, Soonjoo; Lee, Hyun Uk; Lee, Jouhahn; Ko, Hyungduk; Chang, Mincheol; Park, Byoungnam

    2017-09-01

    Electric field-induced charge trapping and exciton dissociation were demonstrated at a penatcene/grapheme quantum dot (GQD) interface using a bottom contact bi-layer field effect transistor (FET) as an electrical nano-probe. Large threshold voltage shift in a pentacene/GQD FET in the dark arises from field-induced carrier trapping in the GQD layer or GQD-induced trap states at the pentacene/GQD interface. As the gate electric field increases, hysteresis characterized by the threshold voltage shift depending on the direction of the gate voltage scan becomes stronger due to carrier trapping associated with the presence of a GQD layer. Upon illumination, exciton dissociation and gate electric field-induced charge trapping simultaneously contribute to increase the threshold voltage window, which can potentially be exploited for photoelectric memory and/or photovoltaic devices through interface engineering.

  13. MoO3 trapping layers with CF4 plasma treatment in flash memory applications

    International Nuclear Information System (INIS)

    Kao, Chuyan Haur; Chen, Hsiang; Chen, Su-Zhien; Chen, Chian Yu; Lo, Kuang-Yu; Lin, Chun Han

    2014-01-01

    Highlights: • MoO 3 -based flash memories have been fabricated. • CF4 plasma treatment could enhance good memory performance. • Material analyses confirm that plasma treatment eliminated defects. • Fluorine atoms might fix the dangling bonds. - Abstract: In this research, we used MoO 3 with CF 4 plasma treatment as charge trapping layer in metal-oxide-high-k -oxide-Si-type memory. We analyzed material properties and electrical characteristics with multiple analyses. The plasma treatment could increase the trapping density, reduce the leakage current, expand band gap, and passivate the defect to enhance the memory performance. The MoO 3 charge trapping layer memory with suitable CF 4 plasma treatment is promising for future nonvolatile memory applications

  14. MEMORY MODULATION

    Science.gov (United States)

    Roozendaal, Benno; McGaugh, James L.

    2011-01-01

    Our memories are not all created equally strong: Some experiences are well remembered while others are remembered poorly, if at all. Research on memory modulation investigates the neurobiological processes and systems that contribute to such differences in the strength of our memories. Extensive evidence from both animal and human research indicates that emotionally significant experiences activate hormonal and brain systems that regulate the consolidation of newly acquired memories. These effects are integrated through noradrenergic activation of the basolateral amygdala which regulates memory consolidation via interactions with many other brain regions involved in consolidating memories of recent experiences. Modulatory systems not only influence neurobiological processes underlying the consolidation of new information, but also affect other mnemonic processes, including memory extinction, memory recall and working memory. In contrast to their enhancing effects on consolidation, adrenal stress hormones impair memory retrieval and working memory. Such effects, as with memory consolidation, require noradrenergic activation of the basolateral amygdala and interactions with other brain regions. PMID:22122145

  15. Memory Matters

    Science.gov (United States)

    ... Staying Safe Videos for Educators Search English Español Memory Matters KidsHealth / For Kids / Memory Matters What's in ... of your complex and multitalented brain. What Is Memory? When an event happens, when you learn something, ...

  16. Standard Test Method for Gravimetric Determination of Nonvolatile Residue (NVR) in Environmentally Controlled Areas for Spacecraft

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    2008-01-01

    1.1 This test method covers the determination of nonvolatile residue (NVR) fallout in environmentally controlled areas used for the assembly, testing, and processing of spacecraft. 1.2 The NVR of interest is that which is deposited on sampling plate surfaces at room temperature: it is left to the user to infer the relationship between the NVR found on the sampling plate surface and that found on any other surfaces. 1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. 1.4 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.

  17. Standard Test Method for Gravimetric Determination of Nonvolatile Residue From Cleanroom Wipers

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    2006-01-01

    1.1 This test method covers the determination of solvent extractable nonvolatile residue (NVR) from wipers used in assembly, cleaning, or testing of spacecraft, but not from those used for analytical surface sampling of hardware. 1.2 The values stated in SI units are to be regarded as the standard. No other units of measurement are included in this standard. 1.3 The NVR of interest is that which can be extracted from cleanroom wipers using a specified solvent that has been selected for its extractive qualities. Alternative solvents may be selected, but since their use may result in different values being generated, they must be identified in the procedure data sheet. This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

  18. Measurements of the size dependence of the concentration of nonvolatile material in fog droplets

    Science.gov (United States)

    Ogren, J. A.; Noone, K. J.; Hallberg, A.; Heintzenberg, J.; Schell, D.; Berner, A.; Solly, I.; Kruisz, C.; Reischl, G.; Arends, B. G.; Wobrock, W.

    1992-11-01

    Measurements of the size dependence of the mass concentration of nonvolatile material dissolved and suspended in fog droplets were obtained with three complementary approaches, covering a size range from c. 1 50µm diameter: a counterflow virtual impactor, an eight-stage aerosol impactor, and a two-stage fogwater impactor. Concentrations were observed to decrease with size over the entire range, contrary to expectations of increasing concentrations at larger sizes. It is possible that the larger droplets had solute concentrations that increased with increasing size, but that the increase was too weak for the measurements to resolve. Future studies should consider the hypothesis that the droplets were coated with a surface-active substance that hindered their uptake of water.

  19. Nonvolatile Solid-State Charged-Polymer Gating of Topological Insulators into the Topological Insulating Regime

    Science.gov (United States)

    Ireland, R. M.; Wu, Liang; Salehi, M.; Oh, S.; Armitage, N. P.; Katz, H. E.

    2018-04-01

    We demonstrate the ability to reduce the carrier concentration of thin films of the topological insulator (TI) Bi2 Se3 by utilizing a nonvolatile electrostatic gating via corona charging of electret polymers. Sufficient electric field can be imparted to a polymer-TI bilayer to result in significant electron density depletion, even without the continuous connection of a gate electrode or the chemical modification of the TI. We show that the Fermi level of Bi2 Se3 is shifted toward the Dirac point with this method. Using terahertz spectroscopy, we find that the surface chemical potential is lowered into the bulk band gap (approximately 50 meV above the Dirac point and 170 meV below the conduction-band minimum), and it is stabilized in the intrinsic regime while enhancing electron mobility. The mobility of surface state electrons is enhanced to a value as high as approximately 1600 cm2/V s at 5 K.

  20. Flavor Compounds in Pixian Broad-Bean Paste: Non-Volatile Organic Acids and Amino Acids

    Directory of Open Access Journals (Sweden)

    Hongbin Lin

    2018-05-01

    Full Text Available Non-volatile organic acids and amino acids are important flavor compounds in Pixian broad-bean paste, which is a traditional Chinese seasoning product. In this study, non-volatile organic acids, formed in the broad-bean paste due to the metabolism of large molecular compounds, are qualitatively and quantitatively determined by high-performance liquid chromatography (HPLC. Amino acids, mainly produced by hydrolysis of soybean proteins, were determined by the amino acid automatic analyzer. Results indicated that seven common organic acids and eighteen common amino acids were found in six Pixian broad-bean paste samples. The content of citric acid was found to be the highest in each sample, between 4.1 mg/g to 6.3 mg/g, and malic acid were between 2.1 mg/g to 3.6 mg/g ranked as the second. Moreover, fumaric acid was first detected in fermented bean pastes albeit with a low content. For amino acids, savory with lower sour taste including glutamine (Gln, glutamic acid (Glu, aspartic acid (Asp and asparagines (Asn were the most abundant, noted to be 6.5 mg/g, 4.0 mg/g, 6.4 mg/g, 4.9 mg/g, 6.2 mg/g and 10.2 mg/g, and bitter taste amino acids followed. More importantly, as important flavor materials in Pixian broad-bean paste, these two groups of substances are expected to be used to evaluate and represent the flavor quality of Pixian broad-bean paste. Moreover, the results revealed that citric acid, glutamic acid, methionine and proline were the most important flavor compounds. These findings are agreat contribution for evaluating the quality and further assessment of Pixian broad-bean paste.

  1. Method for the Collection, Gravimetric and Chemical Analysis of Nonvolatile Residue (NVR) on Surfaces

    Science.gov (United States)

    Gordon, Keith; Rutherford, Gugu; Aranda, Denisse

    2017-01-01

    Nonvolatile residue (NVR), sometimes referred to as molecular contamination is the term used for the total composition of the inorganic and high boiling point organic components in particulates and molecular films deposited on critical surfaces surrounding space structures, with the particulate and NVR contamination originating primarily from pre-launch operations. The "nonvolatile" suggestion from the terminology NVR implies that the collected residue will not experience much loss under ambient conditions. NVR has been shown to have a dramatic impact on the ability to perform optical measurements from platforms based in space. Such contaminants can be detected early by the controlled application of various detection techniques and contamination analyses. Contamination analyses are the techniques used to determine if materials, components, and subsystems can be expected to meet the performance requirements of a system. Of particular concern is the quantity of NVR contaminants that might be deposited on critical payload surfaces from these sources. Subsequent chemical analysis of the contaminant samples by infrared spectroscopy and gas chromatography mass spectrometry identifies the components, gives semi-quantitative estimates of contaminant thickness, indicates possible sources of the NVR, and provides guidance for effective cleanup procedures. In this report, a method for the collection and determination of the mass of NVR was generated by the authors at NASA Langley Research Center. This report describes the method developed and implemented for collecting NVR contaminants, and procedures for gravimetric and chemical analysis of the residue obtained. The result of this NVR analysis collaboration will help pave the way for Langley's ability to certify flight hardware outgassing requirements in support of flight projects such as Stratospheric Aerosol and Gas Experiment III (SAGE III), Clouds and the Earth's Radiant Energy System (CERES), Materials International

  2. Flavor Compounds in Pixian Broad-Bean Paste: Non-Volatile Organic Acids and Amino Acids.

    Science.gov (United States)

    Lin, Hongbin; Yu, Xiaoyu; Fang, Jiaxing; Lu, Yunhao; Liu, Ping; Xing, Yage; Wang, Qin; Che, Zhenming; He, Qiang

    2018-05-29

    Non-volatile organic acids and amino acids are important flavor compounds in Pixian broad-bean paste, which is a traditional Chinese seasoning product. In this study, non-volatile organic acids, formed in the broad-bean paste due to the metabolism of large molecular compounds, are qualitatively and quantitatively determined by high-performance liquid chromatography (HPLC). Amino acids, mainly produced by hydrolysis of soybean proteins, were determined by the amino acid automatic analyzer. Results indicated that seven common organic acids and eighteen common amino acids were found in six Pixian broad-bean paste samples. The content of citric acid was found to be the highest in each sample, between 4.1 mg/g to 6.3 mg/g, and malic acid were between 2.1 mg/g to 3.6 mg/g ranked as the second. Moreover, fumaric acid was first detected in fermented bean pastes albeit with a low content. For amino acids, savory with lower sour taste including glutamine (Gln), glutamic acid (Glu), aspartic acid (Asp) and asparagines (Asn) were the most abundant, noted to be 6.5 mg/g, 4.0 mg/g, 6.4 mg/g, 4.9 mg/g, 6.2 mg/g and 10.2 mg/g, and bitter taste amino acids followed. More importantly, as important flavor materials in Pixian broad-bean paste, these two groups of substances are expected to be used to evaluate and represent the flavor quality of Pixian broad-bean paste. Moreover, the results revealed that citric acid, glutamic acid, methionine and proline were the most important flavor compounds. These findings are agreat contribution for evaluating the quality and further assessment of Pixian broad-bean paste.

  3. DESTINY: A Comprehensive Tool with 3D and Multi-Level Cell Memory Modeling Capability

    Directory of Open Access Journals (Sweden)

    Sparsh Mittal

    2017-09-01

    Full Text Available To enable the design of large capacity memory structures, novel memory technologies such as non-volatile memory (NVM and novel fabrication approaches, e.g., 3D stacking and multi-level cell (MLC design have been explored. The existing modeling tools, however, cover only a few memory technologies, technology nodes and fabrication approaches. We present DESTINY, a tool for modeling 2D/3D memories designed using SRAM, resistive RAM (ReRAM, spin transfer torque RAM (STT-RAM, phase change RAM (PCM and embedded DRAM (eDRAM and 2D memories designed using spin orbit torque RAM (SOT-RAM, domain wall memory (DWM and Flash memory. In addition to single-level cell (SLC designs for all of these memories, DESTINY also supports modeling MLC designs for NVMs. We have extensively validated DESTINY against commercial and research prototypes of these memories. DESTINY is very useful for performing design-space exploration across several dimensions, such as optimizing for a target (e.g., latency, area or energy-delay product for a given memory technology, choosing the suitable memory technology or fabrication method (i.e., 2D v/s 3D for a given optimization target, etc. We believe that DESTINY will boost studies of next-generation memory architectures used in systems ranging from mobile devices to extreme-scale supercomputers. The latest source-code of DESTINY is available from the following git repository: https://bitbucket.org/sparshmittal/destinyv2.

  4. Volatile element trends in gas-rich meteorites

    Energy Technology Data Exchange (ETDEWEB)

    Bart, G; Lipschutz, M E [Purdue Univ., Lafayette, IN (USA). Dept. of Chemistry

    1979-09-01

    Study of 10 volatile elements (and non-volatile Co) in co-existing light and dark portions of 5 gas-rich chondrites indicates patterns of distinct but non-uniform enrichment of volatile elements. Only Cs is enriched in all samples; Bi and Tl enrichments covary. The observed enrichments are inconsistent with prior suggestions of admixture of C1 or C2 chondritic matter, whether pristine or partly devolatilized, but suggest that both light and dark portions of each chondrite represents a compositionally more extended sampling of parental nebular material than hitherto known.

  5. Optimization of poly(vinylidene fluoride-trifluoroethylene) films as non-volatile memory for flexible electronics

    KAUST Repository

    Mao, Duo

    2010-05-01

    The impact of thermal treatment and thickness on the polarization and leakage current of poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] copolymer thin film capacitors has been studied. The evolution of the film morphology, crystallinity and bonding orientation as a function of annealing temperature and thickness were characterized using multiple techniques. Electrical performance of the devices was correlated with the material properties. It was found that annealing at or slightly above the Curie temperature (Tc) is the optimal temperature for high polarization, smooth surface morphology and low leakage current. Higher annealing temperature (but below the melting temperature Tm) favors larger size β crystallites through molecular chain self-organization, resulting in increased film roughness, and the vertical polarization tends to saturate. Metal-Ferroelectric-Metal (MFM) capacitors consistently achieved Ps, Pr and Vc of 8.5 μC/cm2, 7.4 μC/cm2 and 10.2 V, respectively.

  6. Polarity-Free Resistive Switching Characteristics of CuxO Films for Non-volatile Memory Applications

    International Nuclear Information System (INIS)

    Hang-Bing, Lv; Peng, Zhou; Xiu-Feng, Fu; Ming, Yin; Ya-Li, Song; Li, Tang; Ting-Ao, Tang; Yin-Yin, Lin

    2008-01-01

    Resistive switching characteristics of Cu x O films grown by plasma oxidation process at room temperature are investigated. Both bipolar and unipolar stable resistive switching behaviours are observed and confirmed by repeated current–voltage measurements. It is found that the RESET current is dependent on SET compliance current. The mechanism behind this new phenomenon can be understood in terms of conductive filaments formation/rupture with the contribution of Joule heating

  7. Optimization of poly(vinylidene fluoride-trifluoroethylene) films as non-volatile memory for flexible electronics

    KAUST Repository

    Mao, Duo; Quevedo-Ló pez, Manuel Angel Quevedo; Stiegler, Harvey J.; Gnade, Bruce E.; Alshareef, Husam N.

    2010-01-01

    The impact of thermal treatment and thickness on the polarization and leakage current of poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] copolymer thin film capacitors has been studied. The evolution of the film morphology, crystallinity and bonding orientation as a function of annealing temperature and thickness were characterized using multiple techniques. Electrical performance of the devices was correlated with the material properties. It was found that annealing at or slightly above the Curie temperature (Tc) is the optimal temperature for high polarization, smooth surface morphology and low leakage current. Higher annealing temperature (but below the melting temperature Tm) favors larger size β crystallites through molecular chain self-organization, resulting in increased film roughness, and the vertical polarization tends to saturate. Metal-Ferroelectric-Metal (MFM) capacitors consistently achieved Ps, Pr and Vc of 8.5 μC/cm2, 7.4 μC/cm2 and 10.2 V, respectively.

  8. Compact holographic memory and its application to optical pattern recognition

    Science.gov (United States)

    Chao, Tien-Hsin; Reyes, George F.; Zhou, Hanying

    2001-03-01

    JPL is developing a high-density, nonvolatile Compact Holographic Data Storage (CHDS) system to enable large- capacity, high-speed, low power consumption, and read/write of data for commercial and space applications. This CHDS system consists of laser diodes, photorefractive crystal, spatial light modulator, photodetector array, and I/O electronic interface. In operation, pages of information would be recorded and retrieved with random access and high- speed. In this paper, recent technology progress in developing this CHDS at JPL will be presented. The recent applications of the CHDS to optical pattern recognition, as a high-density, high transfer rate memory bank will also be discussed.

  9. Hybrid dual gate ferroelectric memory for multilevel information storage

    KAUST Repository

    Khan, Yasser

    2015-01-01

    Here, we report hybrid organic/inorganic ferroelectric memory with multilevel information storage using transparent p-type SnO semiconductor and ferroelectric P(VDF-TrFE) polymer. The dual gate devices include a top ferroelectric field-effect transistor (FeFET) and a bottom thin-film transistor (TFT). The devices are all fabricated at low temperatures (∼200°C), and demonstrate excellent performance with high hole mobility of 2.7 cm2 V-1 s-1, large memory window of ∼18 V, and a low sub-threshold swing ∼-4 V dec-1. The channel conductance of the bottom-TFT and the top-FeFET can be controlled independently by the bottom and top gates, respectively. The results demonstrate multilevel nonvolatile information storage using ferroelectric memory devices with good retention characteristics.

  10. Highly scalable 3-D NAND-NOR hybrid-type dual bit per cell flash memory devices with an additional cut-off gate

    International Nuclear Information System (INIS)

    Cho, Seongjae; Shim, Wonbo; Park, Ilhan; Kim, Yoon; Park, Byunggook

    2010-01-01

    In this work, a nonvolatile memory (NVM) device of novel structure in 3 dimensions is introduced, and its operation physics is validated. It is based on a pillar structure in which two identical storage nodes are located for dual-bit operation. The two storage nodes on neighboring pillars are controlled by using one common control gate so that the space between silicon pillars can be further reduced. For compatibility with conventional memory operations, an additional cut-off gate is constructed under the common control gate. This is considered as the ultimate form for a 3-D nonvolatile memory device based on a double-gate structure. The underlying physics is explained, and the operational schemes are validated in various aspects by using a numerical device simulation. Also, critical issues in device design for higher reliability are discussed.

  11. The Memory Library

    DEFF Research Database (Denmark)

    Olesen-Bagneux, Ole

    2014-01-01

    of classification and retrieval processes is presented. The key element is to understand the library both as a physical structure and as a structure in the memory of the Alexandrian scholars. In this article, these structures are put together so to propose a new interpretation of the library....

  12. Laboratory Validation of Four Black Carbon Measurement Methods for Determination of the Nonvolatile Particulate Matter (nvPM) Mass Emissions from Commercial Aircraft Engines

    Science.gov (United States)

    Four candidate black carbon (BC) measurement techniques have been identified by the SAE International E-31 Committee for possible use in determining nonvolatile particulate matter (nvPM) mass emissions during commercial aircraft engine certification. These techniques are carbon b...

  13. EPA Method 8321B (SW-846): Solvent-Extractable Nonvolatile Compounds by High Performance Liquid Chromatography-Thermospray-Mass Spectrometry (HPLC-TS-MS) or Ultraviolet (UV) Detection

    Science.gov (United States)

    Method 8321B describes procedures for preparation and analysis of solid, aqueous liquid, drinking water and wipe samples using high performance liquid chromatography and mass spectrometry for extractable non-volatile compounds.

  14. Spin-transfer torque magnetoresistive random-access memory technologies for normally off computing (invited)

    International Nuclear Information System (INIS)

    Ando, K.; Yuasa, S.; Fujita, S.; Ito, J.; Yoda, H.; Suzuki, Y.; Nakatani, Y.; Miyazaki, T.

    2014-01-01

    Most parts of present computer systems are made of volatile devices, and the power to supply them to avoid information loss causes huge energy losses. We can eliminate this meaningless energy loss by utilizing the non-volatile function of advanced spin-transfer torque magnetoresistive random-access memory (STT-MRAM) technology and create a new type of computer, i.e., normally off computers. Critical tasks to achieve normally off computers are implementations of STT-MRAM technologies in the main memory and low-level cache memories. STT-MRAM technology for applications to the main memory has been successfully developed by using perpendicular STT-MRAMs, and faster STT-MRAM technologies for applications to the cache memory are now being developed. The present status of STT-MRAMs and challenges that remain for normally off computers are discussed

  15. Air-stable memory array of bistable rectifying diodes based on ferroelectric-semiconductor polymer blends

    Science.gov (United States)

    Kumar, Manasvi; Sharifi Dehsari, Hamed; Anwar, Saleem; Asadi, Kamal

    2018-03-01

    Organic bistable diodes based on phase-separated blends of ferroelectric and semiconducting polymers have emerged as promising candidates for non-volatile information storage for low-cost solution processable electronics. One of the bottlenecks impeding upscaling is stability and reliable operation of the array in air. Here, we present a memory array fabricated with an air-stable amine-based semiconducting polymer. Memory diode fabrication and full electrical characterizations were carried out in atmospheric conditions (23 °C and 45% relative humidity). The memory diodes showed on/off ratios greater than 100 and further exhibited robust and stable performance upon continuous write-read-erase-read cycles. Moreover, we demonstrate a 4-bit memory array that is free from cross-talk with a shelf-life of several months. Demonstration of the stability and reliable air operation further strengthens the feasibility of the resistance switching in ferroelectric memory diodes for low-cost applications.

  16. Materials and Physics Challenges for Spin Transfer Torque Magnetic Random Access Memories

    Energy Technology Data Exchange (ETDEWEB)

    Heinonen, O.

    2014-10-05

    Magnetic random access memories utilizing the spin transfer torque effect for writing information are a strong contender for non-volatile memories scalable to the 20 nm node, and perhaps beyond. I will here examine how these devices behave as the device size is scaled down from 70 nm size to 20 nm. As device sizes go below ~50 nm, the size becomes comparable to intrinsic magnetic length scales and the device behavior does not simply scale with size. This has implications for the device design and puts additional constraints on the materials in the device.

  17. Effect of Sn and Sb element on the magnetism and functional properties of Ni–Mn–Al ferromagnetic shape memory alloys

    Energy Technology Data Exchange (ETDEWEB)

    Agarwal, Sandeep, E-mail: sandeepxag@yahoo.co.in [LCMP, Department of Condensed Matter Physics and Material Sciences, SN Bose National Centre for Basic Sciences, JD Block, Salt Lake, Kolkata 700098 (India); Mukhopadhyay, P.K. [LCMP, Department of Condensed Matter Physics and Material Sciences, SN Bose National Centre for Basic Sciences, JD Block, Salt Lake, Kolkata 700098 (India)

    2016-03-15

    We have replaced Al partially with Sb and Sn in Ni–Mn–Al systems and investigated its effect on magnetism, entropy change and magnetoresistance in the vicinity of martensitic transformation. Both the samples had identical lattice parameters and Mn contents, which are mostly responsible for magnetism in these systems, yet there were marked changes in magnetic and functional properties of these systems. It was found that the magnetization increased in Sb alloy, while entropy change and magnetoresistance decreased as compared to Sn alloy. These changes are attributed to the change in antiferromagnetic interaction as a result of variation in the Ni d–Mn d hybridization arising due to presence of different sp elements. - Highlights: • Sn and Sb system has same Mn and Ni content and lattice parameter. • Both systems has disparity in magnetism, entropy change and magnetoresistance. • Difference was due to change in the Ni 3d–Mn 3d hybridization. • Sb based alloys are more suitable for mechanical devices. • Sn based alloys are more suitable for magnetocaloric effect and magnetoresistance.

  18. Broadband nonvolatile photonic switching based on optical phase change materials: beyond the classical figure-of-merit.

    Science.gov (United States)

    Zhang, Qihang; Zhang, Yifei; Li, Junying; Soref, Richard; Gu, Tian; Hu, Juejun

    2018-01-01

    In this Letter, we propose a broadband, nonvolatile on-chip switch design in the telecommunication C-band with record low loss and crosstalk. The unprecedented device performance builds on: 1) a new optical phase change material (O-PCM) Ge 2 Sb 2 Se 4 Te 1 (GSST), which exhibits significantly reduced optical attenuation compared to traditional O-PCMs, and 2) a nonperturbative design that enables low-loss device operation beyond the classical figure-of-merit (FOM) limit. We further demonstrate that the 1-by-2 and 2-by-2 switches can serve as basic building blocks to construct nonblocking and nonvolatile on-chip switching fabric supporting arbitrary numbers of input and output ports.

  19. Influence of mineral salts upon activity of Trichoderma harzianum non-volatile metabolites on Armillaria spp. rhizomorphs

    Directory of Open Access Journals (Sweden)

    Krystyna Przybył

    2011-01-01

    Full Text Available Effect of non-volatile metabolites of Trichoderma harzianum together with certain salts containing Mg++, Fe+++, Mn++, Cu++, Al+++, Ca++, K++, Na+, PO4--- and SO3--- on the production and length of rhizomorphs of Armillaria borealis, A. gallica and A. ostoyae was studied. In pure medium, T. harzianum exhibited stimulating effect on rhizomorphs of A. borealis (both number and length and A. ostoyae (only initiation. Cu++ salt totaly inhibited the initiation of rhizomorphs of Armillaria borealis, A. gallica and A. ostoyae. Effect of other compounds on the activity of T. harzianum depended on Armillaria species. The majority of chemical compounds tested supressed the activity of non-volatile metabolites of T. harzianum. Evident stimulating effect was observed under influence of sulphate salts consisting Al++ and Fe+++ on the rhizomorph number of A. borealis and A. gallica, respectively.

  20. Volatile and non-volatile compounds in green tea affected in harvesting time and their correlation to consumer preference.

    Science.gov (United States)

    Kim, Youngmok; Lee, Kwang-Geun; Kim, Mina K

    2016-10-01

    Current study was designed to find out how tea harvesting time affects the volatile and non-volatile compounds profiles of green tea. In addition, correlation of instrumental volatile and non-volatile compounds analyses to consumer perception were analyzed. Overall, earlier harvested green tea had stronger antioxidant capacity (~61.0%) due to the polyphenolic compounds from catechin (23,164 mg/L), in comparison to later harvested green teas (11,961 mg/L). However, high catechin content in green tea influenced negatively the consumer likings of green tea, due to high bitterness (27.6%) and astringency (13.4%). Volatile compounds drive consumer liking of green tea products were also identified, that included linalool, 2,3-methyl butanal, 2-heptanone, (E,E)-3,5-Octadien-2-one. Finding from current study are useful for green tea industry as it provide the difference in physiochemical properties of green tea harvested at different intervals.

  1. The impact of working memory on interpreting

    Institute of Scientific and Technical Information of China (English)

    白云安; 张国梅

    2016-01-01

    This paper investigates the roles of working memory in interpreting process. First of all, it gives a brief introduction to interpreting. Secondly, the paper exemplifies the role of working memory in interpreting. The result reveals that the working memory capacity of interpreters is not adsolutely proportional to the quality of interpreting in the real interpreting conditions. The performance of an interpreter with well-equipped working memory capacity will comprehensively influenced by various elements.

  2. History and the future perspective of the ferroelectric memory; Kyoyudentai memory no rekishiteki haikei to tenbo

    Energy Technology Data Exchange (ETDEWEB)

    Tarui, Y [Waseda University, Tokyo (Japan)

    1998-10-01

    Development work is in progress on ferroelectric memory. The memory is a most suitable non-volatile memory which can be incorporated into IC cards, with its higher speed, lower voltage operation, smaller power consumption, and greater number of rewriting times than EEPROM, DRAM and SRAM. Taking as an opportunity the announcement on an experiment as performed by the authors to control semiconductor charge by using electric depolarization of ferroelectric materials, reports have been made one after another on experiments on thin metal films on TGS or BaTiO3, and experiments on semiconductor films formed on ferroelectric crystals or ceramics substrates by using vacuum deposition. In order to solve problems in ferroelectric materials, thin films of PZT and PLZT have emerged, whose good hysteresis characteristics have also been reported. Thereafter, an announcement was made on a material with bismuth layer like perovskite structure. The material is characterized with having very little film fatigue degradation after rewriting of about 10 {sup 12} times. In scaling a ferroelectric memory, if voltage is decreased in proportion with the size, the operation can be reduced proportionately according to the voltage reduction. This paper introduces a method to constitute a ferroelectric memory. 22 refs., 11 figs., 2 tabs.

  3. Intégration de matériaux à forte permittivité électrique (High-k) dans les mémoires non-volatiles pour les générations sub-45nm

    OpenAIRE

    Bocquet , Marc

    2009-01-01

    Flash memory is today a major element for the development of the portable electronics which require more and more memory capability at low cost (netbook, cell phones, PDA, USB sticks...). In order to maintain it for the years to come, it is necessary to continue improving this technology. Also, the integration of High-k materials and the use of trap charge memories are strongly envisaged. This PhD focuses on the integration and the electrical study (fixed charge, trapping, leakage currents......

  4. Comparison of non-volatile umami components in chicken soup and chicken enzymatic hydrolysate.

    Science.gov (United States)

    Kong, Yan; Yang, Xiao; Ding, Qi; Zhang, Yu-Yu; Sun, Bao-Guo; Chen, Hai-Tao; Sun, Ying

    2017-12-01

    Umami taste is an important part to the taste of chicken. To isolate and identify non-volatile umami compounds, fractions from chicken soup and hydrolysate were prepared and analyzed. Amino acids were analyzed by amino acid analyzer. Organic acids and nucleotides were determined by ultra-performance liquid chromatography. Separation procedures utilizing ultrafiltration, Sephadex G-15 and reversed-phase high-performance liquid chromatography were used to isolate umami taste peptides. Combined with sensory evaluation and LC-Q-TOF-MS, the amino acid sequences of 12 oligopeptides were determined. The amount of taste compounds was higher in chicken enzymatic hydrolysate than that of chicken soup. Eight oligopeptides from chicken enzymatic hydrolysate were identified, including Ala-Asp, Ala-Met, His-Ser, Val-Glu, Ala-Glu, Asp-Ala-Gly, Glu-Asp and Ala-Glu-Ala. Four oligopeptides from chicken soup were identified, including Val-Thr, Ala-His, Ala-Phe and Thr-Glu. Copyright © 2017 Elsevier Ltd. All rights reserved.

  5. Discharge characteristics of an ablative pulsed plasma thruster with non-volatile liquid propellant

    Science.gov (United States)

    Ling, William Yeong Liang; Schönherr, Tony; Koizumi, Hiroyuki

    2017-07-01

    Pulsed plasma thrusters (PPTs) are a form of electric spacecraft propulsion. They have an extremely simple structure and are highly suitable for nano/micro-spacecraft with weights in the kilogram range. Such small spacecraft have recently experienced increased growth but still lack suitable efficient propulsion systems. PPTs operate in a pulsed mode (one discharge = one shot) and typically use solid polytetrafluoroethylene (PTFE) as a propellant. However, new non-volatile liquids in the perfluoropolyether (PFPE) family have recently been found to be promising alternatives. A recent study presented results on the physical characteristics of PFPE vs. PTFE, showing that PFPE is superior in terms of physical characteristics such as its resistance to carbon deposition. This letter will examine the electrical discharge characteristics of PFPE vs. PTFE. The results demonstrate that PFPE has excellent shot-to-shot repeatability and a lower discharge resistance when compared with PTFE. Taken together with its physical characteristics, PFPE appears to be a strong contender to PTFE as a PPT propellant.

  6. Determination of Nonvolatile Amines in Foods by Improved Dansyl Derivatization Reaction.

    Science.gov (United States)

    Handa, Ayami; Kawanabe, Hitomi; Ibe, Akihiro

    2017-01-01

    An analytical method for the determination of nonvolatile amines (putrescine, cadaverine, histamine, tyramine, and spermidine) in foods was developed, using an improved dansyl derivatization technique. The five amines were extracted from food with 1% trichloroacetic acid. Three milliliter of extract was applied to a polymer-based strong cation exchange resin mini-column, which was washed with 5 mL of water, and eluted with 5 mL of 1 mol/L potassium carbonate solution. The eluate was dansylated, then 5 mL of toluene was added with shaking. The toluene layer was evaporated. The residue was taken up in 1 mL of acetonitrile and shaken with 1 mL of 5% proline in 1 mol/L potassium carbonate solution. The upper acetonitrile layer was collected, filtered, and subjected to HPLC. The limits of quantitation for putrescine and cadaverine in the samples were both 0.2 μg/g; those of spermidine, tyramine, and histamine were 0.8, 2.0, and 5.0 μg/g, respectively. The average recoveries of the five amines from nine foods exceeded 80%.

  7. Standard Test Method for Gravimetric Determination of Nonvolatile Residue from Cleanroom Gloves

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    2011-01-01

    1.1 This test method covers the determination of solvent extractable nonvolatile residue (NVR) from gloves used in cleanrooms where spacecraft are assembled, cleaned, or tested. 1.2 The NVR of interest is that which can be extracted from gloves using a specified solvent that has been selected for its extracting qualities, or because it is representative of solvents used in the particular facility. Alternative solvents may be used, but since their use may result in different values being generated, they must be identified in the procedure data sheet. 1.3 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard. 1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

  8. Standard elements; Elements standards

    Energy Technology Data Exchange (ETDEWEB)

    Blanc, B [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

    1958-07-01

    Following his own experience the author recalls the various advantages, especially in the laboratory, of having pre-fabricated vacuum-line components at his disposal. (author) [French] A la suite de sa propre experience, l'auteur veut rappeler les divers avantages que presente, tout particulierement en laboratoire, le fait d'avoir a sa disposition des elements pre-fabriques de canalisations a vide. (auteur)

  9. Targeted Memory Reactivation during Sleep Adaptively Promotes the Strengthening or Weakening of Overlapping Memories.

    Science.gov (United States)

    Oyarzún, Javiera P; Morís, Joaquín; Luque, David; de Diego-Balaguer, Ruth; Fuentemilla, Lluís

    2017-08-09

    System memory consolidation is conceptualized as an active process whereby newly encoded memory representations are strengthened through selective memory reactivation during sleep. However, our learning experience is highly overlapping in content (i.e., shares common elements), and memories of these events are organized in an intricate network of overlapping associated events. It remains to be explored whether and how selective memory reactivation during sleep has an impact on these overlapping memories acquired during awake time. Here, we test in a group of adult women and men the prediction that selective memory reactivation during sleep entails the reactivation of associated events and that this may lead the brain to adaptively regulate whether these associated memories are strengthened or pruned from memory networks on the basis of their relative associative strength with the shared element. Our findings demonstrate the existence of efficient regulatory neural mechanisms governing how complex memory networks are shaped during sleep as a function of their associative memory strength. SIGNIFICANCE STATEMENT Numerous studies have demonstrated that system memory consolidation is an active, selective, and sleep-dependent process in which only subsets of new memories become stabilized through their reactivation. However, the learning experience is highly overlapping in content and thus events are encoded in an intricate network of related memories. It remains to be explored whether and how memory reactivation has an impact on overlapping memories acquired during awake time. Here, we show that sleep memory reactivation promotes strengthening and weakening of overlapping memories based on their associative memory strength. These results suggest the existence of an efficient regulatory neural mechanism that avoids the formation of cluttered memory representation of multiple events and promotes stabilization of complex memory networks. Copyright © 2017 the authors 0270-6474/17/377748-11$15.00/0.

  10. Cognitive memory.

    Science.gov (United States)

    Widrow, Bernard; Aragon, Juan Carlos

    2013-05-01

    Regarding the workings of the human mind, memory and pattern recognition seem to be intertwined. You generally do not have one without the other. Taking inspiration from life experience, a new form of computer memory has been devised. Certain conjectures about human memory are keys to the central idea. The design of a practical and useful "cognitive" memory system is contemplated, a memory system that may also serve as a model for many aspects of human memory. The new memory does not function like a computer memory where specific data is stored in specific numbered registers and retrieval is done by reading the contents of the specified memory register, or done by matching key words as with a document search. Incoming sensory data would be stored at the next available empty memory location, and indeed could be stored redundantly at several empty locations. The stored sensory data would neither have key words nor would it be located in known or specified memory locations. Sensory inputs concerning a single object or subject are stored together as patterns in a single "file folder" or "memory folder". When the contents of the folder are retrieved, sights, sounds, tactile feel, smell, etc., are obtained all at the same time. Retrieval would be initiated by a query or a prompt signal from a current set of sensory inputs or patterns. A search through the memory would be made to locate stored data that correlates with or relates to the prompt input. The search would be done by a retrieval system whose first stage makes use of autoassociative artificial neural networks and whose second stage relies on exhaustive search. Applications of cognitive memory systems have been made to visual aircraft identification, aircraft navigation, and human facial recognition. Concerning human memory, reasons are given why it is unlikely that long-term memory is stored in the synapses of the brain's neural networks. Reasons are given suggesting that long-term memory is stored in DNA or RNA

  11. Memory Modulation

    NARCIS (Netherlands)

    Roozendaal, Benno; McGaugh, James L.

    2011-01-01

    Our memories are not all created equally strong: Some experiences are well remembered while others are remembered poorly, if at all. Research on memory modulation investigates the neurobiological processes and systems that contribute to such differences in the strength of our memories. Extensive

  12. Flexible conductive-bridging random-access-memory cell vertically stacked with top Ag electrode, PEO, PVK, and bottom Pt electrode

    Science.gov (United States)

    Seung, Hyun-Min; Kwon, Kyoung-Cheol; Lee, Gon-Sub; Park, Jea-Gun

    2014-10-01

    Flexible conductive-bridging random-access-memory (RAM) cells were fabricated with a cross-bar memory cell stacked with a top Ag electrode, conductive polymer (poly(n-vinylcarbazole): PVK), electrolyte (polyethylene oxide: PEO), bottom Pt electrode, and flexible substrate (polyethersulfone: PES), exhibiting the bipolar switching behavior of resistive random access memory (ReRAM). The cell also exhibited bending-fatigue-free nonvolatile memory characteristics: i.e., a set voltage of 1.0 V, a reset voltage of -1.6 V, retention time of >1 × 105 s with a memory margin of 9.2 × 105, program/erase endurance cycles of >102 with a memory margin of 8.4 × 105, and bending-fatigue-free cycles of ˜1 × 103 with a memory margin (Ion/Ioff) of 3.3 × 105.

  13. Release of radioactive fission products from BN-600 reactor untight fuel elements

    International Nuclear Information System (INIS)

    Osipov, S.L.; Tsikunov, A.G.; Lisitsin, E.C.

    1996-01-01

    The experimental data on the release of radioactive fission products from BN-600 reactor untight fuel elements are given in the report. Various groups of radionuclides: inert gases Xe, Kr, volatile Cs, J, non-volatile Nb, and La are considered. The results of calculation-experimental study of transfer and distribution of radionuclides in the reactor primary circuit, gas system and sodium coolant are considered. It is shown that some complex radioactivity transfer processes can be described by simple mathematical models. (author)

  14. Memory Dysfunction

    Science.gov (United States)

    Matthews, Brandy R.

    2015-01-01

    Purpose of Review: This article highlights the dissociable human memory systems of episodic, semantic, and procedural memory in the context of neurologic illnesses known to adversely affect specific neuroanatomic structures relevant to each memory system. Recent Findings: Advances in functional neuroimaging and refinement of neuropsychological and bedside assessment tools continue to support a model of multiple memory systems that are distinct yet complementary and to support the potential for one system to be engaged as a compensatory strategy when a counterpart system fails. Summary: Episodic memory, the ability to recall personal episodes, is the subtype of memory most often perceived as dysfunctional by patients and informants. Medial temporal lobe structures, especially the hippocampal formation and associated cortical and subcortical structures, are most often associated with episodic memory loss. Episodic memory dysfunction may present acutely, as in concussion; transiently, as in transient global amnesia (TGA); subacutely, as in thiamine deficiency; or chronically, as in Alzheimer disease. Semantic memory refers to acquired knowledge about the world. Anterior and inferior temporal lobe structures are most often associated with semantic memory loss. The semantic variant of primary progressive aphasia (svPPA) is the paradigmatic disorder resulting in predominant semantic memory dysfunction. Working memory, associated with frontal lobe function, is the active maintenance of information in the mind that can be potentially manipulated to complete goal-directed tasks. Procedural memory, the ability to learn skills that become automatic, involves the basal ganglia, cerebellum, and supplementary motor cortex. Parkinson disease and related disorders result in procedural memory deficits. Most memory concerns warrant bedside cognitive or neuropsychological evaluation and neuroimaging to assess for specific neuropathologies and guide treatment. PMID:26039844

  15. Reprogrammable logic in memristive crossbar for in-memory computing

    Science.gov (United States)

    Cheng, Long; Zhang, Mei-Yun; Li, Yi; Zhou, Ya-Xiong; Wang, Zhuo-Rui; Hu, Si-Yu; Long, Shi-Bing; Liu, Ming; Miao, Xiang-Shui

    2017-12-01

    Memristive stateful logic has emerged as a promising next-generation in-memory computing paradigm to address escalating computing-performance pressures in traditional von Neumann architecture. Here, we present a nonvolatile reprogrammable logic method that can process data between different rows and columns in a memristive crossbar array based on material implication (IMP) logic. Arbitrary Boolean logic can be executed with a reprogrammable cell containing four memristors in a crossbar array. In the fabricated Ti/HfO2/W memristive array, some fundamental functions, such as universal NAND logic and data transfer, were experimentally implemented. Moreover, using eight memristors in a 2  ×  4 array, a one-bit full adder was theoretically designed and verified by simulation to exhibit the feasibility of our method to accomplish complex computing tasks. In addition, some critical logic-related performances were further discussed, such as the flexibility of data processing, cascading problem and bit error rate. Such a method could be a step forward in developing IMP-based memristive nonvolatile logic for large-scale in-memory computing architecture.

  16. Declarative memory.

    Science.gov (United States)

    Riedel, Wim J; Blokland, Arjan

    2015-01-01

    Declarative Memory consists of memory for events (episodic memory) and facts (semantic memory). Methods to test declarative memory are key in investigating effects of potential cognition-enhancing substances--medicinal drugs or nutrients. A number of cognitive performance tests assessing declarative episodic memory tapping verbal learning, logical memory, pattern recognition memory, and paired associates learning are described. These tests have been used as outcome variables in 34 studies in humans that have been described in the literature in the past 10 years. Also, the use of episodic tests in animal research is discussed also in relation to the drug effects in these tasks. The results show that nutritional supplementation of polyunsaturated fatty acids has been investigated most abundantly and, in a number of cases, but not all, show indications of positive effects on declarative memory, more so in elderly than in young subjects. Studies investigating effects of registered anti-Alzheimer drugs, cholinesterase inhibitors in mild cognitive impairment, show positive and negative effects on declarative memory. Studies mainly carried out in healthy volunteers investigating the effects of acute dopamine stimulation indicate enhanced memory consolidation as manifested specifically by better delayed recall, especially at time points long after learning and more so when drug is administered after learning and if word lists are longer. The animal studies reveal a different picture with respect to the effects of different drugs on memory performance. This suggests that at least for episodic memory tasks, the translational value is rather poor. For the human studies, detailed parameters of the compositions of word lists for declarative memory tests are discussed and it is concluded that tailored adaptations of tests to fit the hypothesis under study, rather than "off-the-shelf" use of existing tests, are recommended.

  17. Long-term studies on the effects of nonvolatile organic compounds on porous media surface areas.

    Science.gov (United States)

    Khachikian, Crist S; Harmon, Thomas C

    2002-01-01

    This paper investigates the long-term behavior of porous media contaminated by nonvolatile organic compounds (NVOC) in terms of specific interfacial surface area. Specifically, a natural sand, Moffett sand (MS), was contaminated with naphthalene and the surface area was measured repeatedly over time using nitrogen adsorption-desorption techniques. A field-contaminated sand affected by lamp-black material (LB) from former manufactured gas plant operations was also studied. Lampblack is a carbonaceous skeleton containing polycyclic aromatic hydrocarbons (PAHs) and other hydrocarbons. It is hypothesized that soils contaminated by these types of chemicals will exhibit significantly less surface area than their clean counterparts. The surface areas for the contaminated MS samples increased toward their clean-MS values during the 700-h aging period, but achieved the clean values only after pentane extraction or heating at 60 degrees C. Heating at 50 degrees C failed to achieve a similar recovery of the clean-MS surface area value. Nonspecific mass loss tracked the increase in surface area as indirect evidence that naphthalene loss was the cause of the surface area increase. For the LB samples, aging at 100 degrees C produced a slight decrease in surface area and mass while aging at 250 degrees C caused the surface area to increase roughly threefold while the mass decreased by approximately 1%. These results suggest that, under moderate heating and over the time scale of this investigation, there is a redistribution of the complex contaminant mixture on the solid matrix. Greater temperatures remove mass more efficiently and therefore exhibited the surface area increase expected in this experiment.

  18. Studying the fate of non-volatile organic compounds in a commercial plasma air purifier

    Energy Technology Data Exchange (ETDEWEB)

    Schmid, Stefan [ETH Zürich, Department of Chemistry and Applied Biosciences, CH-8093 Zürich (Switzerland); Seiler, Cornelia; Gerecke, Andreas C. [Swiss Federal Laboratories for Material Science and Technology (EMPA), CH-8600 Dübendorf (Switzerland); Hächler, Herbert [University of Zürich, Institute for Food Safety and Hygiene, National Centre for Enteropathogenic Bacteria and Listeria (NENT), CH-8057 Zürich (Switzerland); Hilbi, Hubert [Ludwig-Maximilians-Universität München Max von Pettenkofer-Institut, D-80336 München (Germany); Frey, Joachim [University of Bern, Institute for Veterinary Bacteriology, CH-3001 Bern (Switzerland); Weidmann, Simon; Meier, Lukas; Berchtold, Christian [ETH Zürich, Department of Chemistry and Applied Biosciences, CH-8093 Zürich (Switzerland); Zenobi, Renato, E-mail: zenobi@org.chem.ethz.ch [ETH Zürich, Department of Chemistry and Applied Biosciences, CH-8093 Zürich (Switzerland)

    2013-07-15

    Highlights: • Degradation of environmental toxins, a protein, and bioparticles were studied. • A commercial air purifier based on a cold plasma was used. • Passage through the device reduced the concentration of the compounds/particles. • Deposition inside the plasma air purifier was the main removal process. -- Abstract: Degradation of non-volatile organic compounds–environmental toxins (methyltriclosane and phenanthrene), bovine serum albumin, as well as bioparticles (Legionella pneumophila, Bacillus subtilis, and Bacillus anthracis)–in a commercially available plasma air purifier based on a cold plasma was studied in detail, focusing on its efficiency and on the resulting degradation products. This system is capable of handling air flow velocities of up to 3.0 m s{sup −1} (3200 L min{sup −1}), much higher than other plasma-based reactors described in the literature, which generally are limited to air flow rates below 10 L min{sup −1}. Mass balance studies consistently indicated a reduction in concentration of the compounds/particles after passage through the plasma air purifier, 31% for phenanthrene, 17% for methyltriclosane, and 80% for bovine serum albumin. L. pneumophila did not survive passage through the plasma air purifier, and cell counts of aerosolized spores of B. subtilis and B. anthracis were reduced by 26- and 15-fold, depending on whether it was run at 10 Hz or 50 Hz, respectively. However rather than chemical degradation, deposition on the inner surfaces of the plasma air purifier occured. Our interpretation is that putative “degradation” efficiencies were largely due to electrostatic precipitation rather than to decomposition into smaller molecules.

  19. Galvanic element. Galvanisches Element

    Energy Technology Data Exchange (ETDEWEB)

    Sprengel, D.; Haelbig, H.

    1980-01-03

    The invention concerns a gas-tight sealed accumulator with positive and negative electrode plates and an auxillary electrode electroconductively bound to the latter for suppressing oxygen pressure. The auxillary electrode is an intermediate film electrode. The film catalysing oxygen reduction is hydrophilic in character and the other film is hydrophobic. A double coated foil has proved to be advantageous, the hydrophilic film being formed from polymer-bound activated carbon and the hydrophrobic film from porous polytetrafluoroethylene. A metallic network of silver or nickel is rolled into the outer side of the activated carbon film. This auxillary electrode can be used to advantage in all galvanic elements. Even primary cells fall within the scope of application for auxillary electrodes because many of these contain a highly oxidized electrodic material which tends to give off oxygen.

  20. Bulk heterojunction polymer memory devices with reduced graphene oxide as electrodes.

    Science.gov (United States)

    Liu, Juqing; Yin, Zongyou; Cao, Xiehong; Zhao, Fei; Lin, Anping; Xie, Linghai; Fan, Quli; Boey, Freddy; Zhang, Hua; Huang, Wei

    2010-07-27

    A unique device structure with a configuration of reduced graphene oxide (rGO) /P3HT:PCBM/Al has been designed for the polymer nonvolatile memory device. The current-voltage (I-V) characteristics of the fabricated device showed the electrical bistability with a write-once-read-many-times (WORM) memory effect. The memory device exhibits a high ON/OFF ratio (10(4)-10(5)) and low switching threshold voltage (0.5-1.2 V), which are dependent on the sheet resistance of rGO electrode. Our experimental results confirm that the carrier transport mechanisms in the OFF and ON states are dominated by the thermionic emission current and ohmic current, respectively. The polarization of PCBM domains and the localized internal electrical field formed among the adjacent domains are proposed to explain the electrical transition of the memory device.