MIS hot electron devices for enhancement of surface reactivity by hot electrons

DEFF Research Database (Denmark)

Thomsen, Lasse Bjørchmar

A Metal-Insulator-Semiconductor (MIS) based device is developed for investigation of hot electron enhanced chemistry. A model of the device is presented explaining the key concepts of the functionality and the character- istics. The MIS hot electron emitter is fabricated using cleanroom technology...... and the process sequence is described. An Ultra High Vacuum (UHV) setup is modified to facilitate experiments with electron emission from the MIS hot electron emitters and hot electron chemistry. Simulations show the importance of keeping tunnel barrier roughness to an absolute minimum. The tunnel oxide...... to be an important energy loss center for the electrons tunneling through the oxide lowering the emission e±ciency of a factor of 10 for a 1 nm Ti layer thickness. Electron emission is observed under ambient pressure conditions and in up to 2 bars of Ar. 2 bar Ar decrease the emission current by an order...

The TDDB Characteristics of Ultra-Thin Gate Oxide MOS Capacitors under Constant Voltage Stress and Substrate Hot-Carrier Injection

Directory of Open Access Journals (Sweden)

Jingyu Shen

2018-01-01

Full Text Available The breakdown characteristics of ultra-thin gate oxide MOS capacitors fabricated in 65 nm CMOS technology under constant voltage stress and substrate hot-carrier injection are investigated. Compared to normal thick gate oxide, the degradation mechanism of time-dependent dielectric breakdown (TDDB of ultra-thin gate oxide is found to be different. It is found that the gate current (Ig of ultra-thin gate oxide MOS capacitor is more likely to be induced not only by Fowler-Nordheim (F-N tunneling electrons, but also by electrons surmounting barrier and penetrating electrons in the condition of constant voltage stress. Moreover it is shown that the time to breakdown (tbd under substrate hot-carrier injection is far less than that under constant voltage stress when the failure criterion is defined as a hard breakdown according to the experimental results. The TDDB mechanism of ultra-thin gate oxide will be detailed. The differences in TDDB characteristics of MOS capacitors induced by constant voltage stress and substrate hot-carrier injection will be also discussed.

Current gain above 10 in sub-10 nm base III-Nitride tunneling hot electron transistors with GaN/AlN emitter

Energy Technology Data Exchange (ETDEWEB)

Yang, Zhichao, E-mail: zcyang.phys@gmail.com; Zhang, Yuewei; Krishnamoorthy, Sriram; Nath, Digbijoy N. [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Khurgin, Jacob B. [Department of Electrical and Computer Engineering, Johns Hopkins University, Baltimore, Maryland 21218 (United States); Rajan, Siddharth [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)

2016-05-09

We report on a tunneling hot electron transistor amplifier with common-emitter current gain greater than 10 at a collector current density in excess of 40 kA/cm{sup 2}. The use of a wide-bandgap GaN/AlN (111 nm/2.5 nm) emitter was found to greatly improve injection efficiency of the emitter and reduce cold electron leakage. With an ultra-thin (8 nm) base, 93% of the injected hot electrons were collected, enabling a common-emitter current gain up to 14.5. This work improves understanding of the quasi-ballistic hot electron transport and may impact the development of high speed devices based on unipolar hot electron transport.

Ultrafast Phase Transition in Vanadium Dioxide Driven by Hot-Electron Injection

Directory of Open Access Journals (Sweden)

Prasankumar R. P.

2013-03-01

Full Text Available We present a novel all-optical method of triggering the phase transition in vanadium dioxide by means of ballistic electrons injected across the interface between a mesh of Au nanoparticles coveringd VO2 nanoislands. By performing non-degenerate pump-probe transmission spectroscopy on this hybrid plasmonic/phase-changing nanostructure, structural and electronic dynamics can be retrieved and compared.

Manipulating the electron distribution through a combination of electron injection and MacKenzie’s Maxwell Demon

International Nuclear Information System (INIS)

Yip, Chi-Shung; Hershkowitz, Noah

2015-01-01

Experiments on electron heating are performed in a biased hot filament-produced argon plasma. Electrons are confined by multi-dipole magnetic fields on the radial wall of the cylindrical chamber but not the planar end walls. Electron heating is provided by a combination of cold electron injection (Hershowitz N and Leung K N 1975 Appl. Phys. Lett. 26 607) and a MacKenzie Maxwell Demon (Mackenzie K R et al 1971 Appl. Phys. Lett. 18 529). This approach allows the manipulation of the electrons by introducing a depleted tail into the electron energy distribution function or by removing a depleted tail. It is found that the injected electrons mimic and thermalize with the electron species with the closest average energy or temperature. The effect of the injected electrons is optimal when they mimic the secondary electrons emitted from the wall instead of the degraded primary electrons. Both approaches combine to achieve increases in electron temperature T e from 0.67 to 2.8 eV, which was not significantly higher than using each approach alone. (paper)

A memristor-based nonvolatile latch circuit

International Nuclear Information System (INIS)

Robinett, Warren; Pickett, Matthew; Borghetti, Julien; Xia Qiangfei; Snider, Gregory S; Medeiros-Ribeiro, Gilberto; Williams, R Stanley

2010-01-01

Memristive devices, which exhibit a dynamical conductance state that depends on the excitation history, can be used as nonvolatile memory elements by storing information as different conductance states. We describe the implementation of a nonvolatile synchronous flip-flop circuit that uses a nanoscale memristive device as the nonvolatile memory element. Controlled testing of the circuit demonstrated successful state storage and restoration, with an error rate of 0.1%, during 1000 power loss events. These results indicate that integration of digital logic devices and memristors could open the way for nonvolatile computation with applications in small platforms that rely on intermittent power sources. This demonstrated feasibility of tight integration of memristors with CMOS (complementary metal-oxide-semiconductor) circuitry challenges the traditional memory hierarchy, in which nonvolatile memory is only available as a large, slow, monolithic block at the bottom of the hierarchy. In contrast, the nonvolatile, memristor-based memory cell can be fast, fine-grained and small, and is compatible with conventional CMOS electronics. This threatens to upset the traditional memory hierarchy, and may open up new architectural possibilities beyond it.

Syringe injectable electronics

Science.gov (United States)

Hong, Guosong; Zhou, Tao; Jin, Lihua; Duvvuri, Madhavi; Jiang, Zhe; Kruskal, Peter; Xie, Chong; Suo, Zhigang; Fang, Ying; Lieber, Charles M.

2015-01-01

Seamless and minimally-invasive three-dimensional (3D) interpenetration of electronics within artificial or natural structures could allow for continuous monitoring and manipulation of their properties. Flexible electronics provide a means for conforming electronics to non-planar surfaces, yet targeted delivery of flexible electronics to internal regions remains difficult. Here, we overcome this challenge by demonstrating syringe injection and subsequent unfolding of submicrometer-thick, centimeter-scale macroporous mesh electronics through needles with a diameter as small as 100 micrometers. Our results show that electronic components can be injected into man-made and biological cavities, as well as dense gels and tissue, with > 90% device yield. We demonstrate several applications of syringe injectable electronics as a general approach for interpenetrating flexible electronics with 3D structures, including (i) monitoring of internal mechanical strains in polymer cavities, (ii) tight integration and low chronic immunoreactivity with several distinct regions of the brain, and (iii) in vivo multiplexed neural recording. Moreover, syringe injection enables delivery of flexible electronics through a rigid shell, delivery of large volume flexible electronics that can fill internal cavities and co-injection of electronics with other materials into host structures, opening up unique applications for flexible electronics. PMID:26053995

Syringe-injectable electronics.

Science.gov (United States)

Liu, Jia; Fu, Tian-Ming; Cheng, Zengguang; Hong, Guosong; Zhou, Tao; Jin, Lihua; Duvvuri, Madhavi; Jiang, Zhe; Kruskal, Peter; Xie, Chong; Suo, Zhigang; Fang, Ying; Lieber, Charles M

2015-07-01

Seamless and minimally invasive three-dimensional interpenetration of electronics within artificial or natural structures could allow for continuous monitoring and manipulation of their properties. Flexible electronics provide a means for conforming electronics to non-planar surfaces, yet targeted delivery of flexible electronics to internal regions remains difficult. Here, we overcome this challenge by demonstrating the syringe injection (and subsequent unfolding) of sub-micrometre-thick, centimetre-scale macroporous mesh electronics through needles with a diameter as small as 100 μm. Our results show that electronic components can be injected into man-made and biological cavities, as well as dense gels and tissue, with >90% device yield. We demonstrate several applications of syringe-injectable electronics as a general approach for interpenetrating flexible electronics with three-dimensional structures, including (1) monitoring internal mechanical strains in polymer cavities, (2) tight integration and low chronic immunoreactivity with several distinct regions of the brain, and (3) in vivo multiplexed neural recording. Moreover, syringe injection enables the delivery of flexible electronics through a rigid shell, the delivery of large-volume flexible electronics that can fill internal cavities, and co-injection of electronics with other materials into host structures, opening up unique applications for flexible electronics.

Au nanoparticle-decorated silicon pyramids for plasmon-enhanced hot electron near-infrared photodetection

Science.gov (United States)

Qi, Zhiyang; Zhai, Yusheng; Wen, Long; Wang, Qilong; Chen, Qin; Iqbal, Sami; Chen, Guangdian; Xu, Ji; Tu, Yan

2017-07-01

The heterojunction between metal and silicon (Si) is an attractive route to extend the response of Si-based photodiodes into the near-infrared (NIR) region, so-called Schottky barrier diodes. Photons absorbed into a metallic nanostructure excite the surface plasmon resonances (SPRs), which can be damped non-radiatively through the creation of hot electrons. Unfortunately, the quantum efficiency of hot electron detectors remains low due to low optical absorption and poor electron injection efficiency. In this study, we propose an efficient and low-cost plasmonic hot electron NIR photodetector based on a Au nanoparticle (Au NP)-decorated Si pyramid Schottky junction. The large-area and lithography-free photodetector is realized by using an anisotropic chemical wet etching and rapid thermal annealing (RTA) of a thin Au film. We experimentally demonstrate that these hot electron detectors have broad photoresponsivity spectra in the NIR region of 1200-1475 nm, with a low dark current on the order of 10-5 A cm-2. The observed responsivities enable these devices to be competitive with other reported Si-based NIR hot electron photodetectors using perfectly periodic nanostructures. The improved performance is attributed to the pyramid surface which can enhance light trapping and the localized electric field, and the nano-sized Au NPs which are beneficial for the tunneling of hot electrons. The simple and large-area preparation processes make them suitable for large-scale thermophotovoltaic cell and low-cost NIR detection applications.

Operation of a novel hot-electron vertical-cavity surface-emitting laser

Science.gov (United States)

Balkan, Naci; O'Brien-Davies, Angela; Thoms, A. B.; Potter, Richard J.; Poolton, Nigel; Adams, Michael J.; Masum, J.; Bek, Alpan; Serpenguzel, Ali; Aydinli, Atilla; Roberts, John S.

1998-07-01

The hot Electron Light Emission and Lasing in Semiconductor Heterostructures devices (HELLISH-1) is novel surface emitter consisting of a GaAs quantum well, within the depletion region, on the n side of Ga1-xAlxAs p- n junction. It utilizes hot electron transport parallel to the layers and injection of hot electron hole pairs into the quantum well through a combination of mechanisms including tunnelling, thermionic emission and diffusion of `lucky' carriers. Super Radiant HELLISH-1 is an advanced structure incorporating a lower distributed Bragg reflector (DBR). Combined with the finite reflectivity of the upper semiconductor-air interface reflectivity it defines a quasi- resonant cavity enabling emission output from the top surface with a higher spectral purity. The output power has increased by two orders of magnitude and reduced the full width at half maximum (FWHM) to 20 nm. An upper DBR added to the structure defines HELLISH-VCSEL which is currently the first operational hot electron surface emitting laser and lases at room temperature with a 1.5 nm FWHM. In this work we demonstrate and compare the operation of UB-HELLISH-1 and HELLISH-VCSEL using experimental and theoretical reflectivity spectra over an extensive temperature range.

Suppression of sawtooth oscillations due to hot electrons and hot ions

International Nuclear Information System (INIS)

Zhang, Y.Z.; Berk, H.L.

1989-01-01

The theory of m = 1 kink mode stabilization is discussed in the presence of either magnetically trapped hot electrons or hot ions. For instability hot ion requires particles peaked inside the q = 1 surface, while hot electrons require that its pressure profile be increasing at the q = 1 surface. Experimentally observed sawtooth stabilization usually occurs with off-axis heating with ECRH and near axis heating with ICRH. Such heating may produce the magnetically trapped hot particle pressure profiles that are consistent with theory. 17 refs., 2 figs

Organic non-volatile memories from ferroelectric phase separated blends

Science.gov (United States)

Asadi, Kamal; de Leeuw, Dago; de Boer, Bert; Blom, Paul

2009-03-01

Ferroelectric polarisation is an attractive physical property for non-volatile binary switching. The functionality of the targeted memory should be based on resistive switching. Conductivity and ferroelectricity however cannot be tuned independently. The challenge is to develop a storage medium in which the favourable properties of ferroelectrics such as bistability and non-volatility can be combined with the beneficial properties provided by semiconductors such as conductivity and rectification. In this contribution we present an integrated solution by blending semiconducting and ferroelectric polymers into phase separated networks. The polarisation field of the ferroelectric modulates the injection barrier at the semiconductor--metal contact. This combination allows for solution-processed non-volatile memory arrays with a simple cross-bar architecture that can be read-out non-destructively. Based on this general concept a non-volatile, reversible switchable Schottky diode with relatively fast programming time of shorter than 100 microseconds, long information retention time of longer than 10^ days, and high programming cycle endurance with non-destructive read-out is demonstrated.

Injection, compression and confinement of electrons in a magnetic mirror

International Nuclear Information System (INIS)

Fisher, A.

1975-01-01

A Helmholtz coil configuration has been constructed where the magnetic field can be increased to about 10 kGauss in 20 μsec. Electrons are injected from a hot tantalum filament between two plates across which a potential of about 5 keV is applied. The electric field E is perpendicular to the magnetic field B so that the direction of the E x B drift is radial--into the magnetic mirror. About 10 14 electrons were injected and about 10 13 electrons were trapped. The initial electron energy was about 5 keV and after compression 500 keV x-rays were observed. The confinement time is very sensitive to vacuum. Confinement times of milliseconds and good compression were observed at vacuum of 5.10 -5 torr or less. Above 5.10 -5 torr there was no trapping or compression. After a compressed ring of electrons was formed, it was released by a pulse applied to one of the Helmholtz coils that reduced the field. Ejection of the electron ring was observed by x-ray measurements

Surface-Plasmon-Driven Hot Electron Photochemistry.

Science.gov (United States)

Zhang, Yuchao; He, Shuai; Guo, Wenxiao; Hu, Yue; Huang, Jiawei; Mulcahy, Justin R; Wei, Wei David

2017-11-30

Visible-light-driven photochemistry has continued to attract heightened interest due to its capacity to efficiently harvest solar energy and its potential to solve the global energy crisis. Plasmonic nanostructures boast broadly tunable optical properties coupled with catalytically active surfaces that offer a unique opportunity for solar photochemistry. Resonant optical excitation of surface plasmons produces energetic hot electrons that can be collected to facilitate chemical reactions. This review sums up recent theoretical and experimental approaches for understanding the underlying photophysical processes in hot electron generation and discusses various electron-transfer models on both plasmonic metal nanostructures and plasmonic metal/semiconductor heterostructures. Following that are highlights of recent examples of plasmon-driven hot electron photochemical reactions within the context of both cases. The review concludes with a discussion about the remaining challenges in the field and future opportunities for addressing the low reaction efficiencies in hot-electron-induced photochemistry.

Simulation studies on stability of hot electron plasma

International Nuclear Information System (INIS)

Ohsawa, Yukiharu

1985-01-01

Stability of a hot electron plasma in an NBT(EBT)-like geometry is studied by using a 2-1/2 dimensional relativistic, electromagnetic particle code. For the low-frequency hot electron interchange mode, comparison of the simulation results with the analytical predictions of linear stability theory show fairly good agreement with the magnitude of the growth rates calculated without hot electron finite Larmor radius effects. Strong stabilizing effects by finite Larmor radius of the hot electrons are observed for short wavelength modes. As for the high-frequency hot electron interchange mode, there is a discrepancy between the simulation results and the theory. The high-frequency instability is not observed though a parameter regime is chosen in which the high-frequency hot electron interchange mode is theoretically predicted to grow. Strong cross-field diffusion in a poloidal direction of the hot electrons might explain the stability. Each particle has a magnetic drift velocity, and the speed of the magnetic drift is proportional to the kinetic energy of each particle. Hence, if the particles have high temperature, the spread of the magnetic drift velocity is large. This causes a strong cross-field diffusion of the hot electrons. In the simulation for this interchange mode, an enhanced temperature relaxation is observed between the hot and cold electrons although the theoretically predicted high frequency modes are stable. (Nogami, K.)

Flute-interchange stability in a hot electron plasma

International Nuclear Information System (INIS)

Dominguez, R.R.

1980-01-01

Several topics in the kinetic stability theory of flute-interchange modes in a hot electron plasma are discussed. The stability analysis of the hot-electron, curvature-driven flute-interchange mode, previously performed in a slab geometry, is extended to a cylindrical plasma. The cold electron concentration necessary for stability differs substantially from previous criteria. The inclusion of a finite temperature background plasma in the stability analysis results in an ion curvature-driven flute-interchange mode which may be stabilized by either hot-electron diamagnetic effects, hot-electron plasma density, or finite (ion) Larmor radius effects

Perpendicular electron cyclotron emission from hot electrons in TMX-U

International Nuclear Information System (INIS)

James, R.A.; Ellis, R.F.; Lasnier, C.J.; Casper, T.A.; Celata, C.M.

1984-01-01

Perpendicular electron cyclotron emission (PECE) from the electron cyclotron resonant heating of hot electrons in TMX-U is measured at 30 to 40 and 50 to 75 GHz. This emission is optically thin and is measured at the midplane, f/sub ce/ approx. = 14 GHz, in either end cell. In the west end cell, the emission can be measured at different axial positions thus yielding the temporal history of the hot electron axial profile. These profiles are in excellent agreement with the axial diamagnetic signals. In addition, the PECE signal level correlates well with the diamagnetic signal over a wide range of hot electron densities. Preliminary results from theoretical modeling and comparisons with other diagnostics are also presented

Feasibility and limitations of anti-fuses based on bistable non-volatile switches for power electronic applications

Science.gov (United States)

Erlbacher, T.; Huerner, A.; Bauer, A. J.; Frey, L.

2012-09-01

Anti-fuse devices based on non-volatile memory cells and suitable for power electronic applications are demonstrated for the first time using silicon technology. These devices may be applied as stand alone devices or integrated using standard junction-isolation into application-specific and smart-power integrated circuits. The on-resistance of such devices can be permanently switched by nine orders of magnitude by triggering the anti-fuse with a positive voltage pulse. Extrapolation of measurement data and 2D TCAD process and device simulations indicate that 20 A anti-fuses with 10 mΩ can be reliably fabricated in 0.35 μm technology with a footprint of 2.5 mm2. Moreover, this concept offers distinguished added-values compared to existing mechanical relays, e.g. pre-test, temporary and permanent reset functions, gradual turn-on mode, non-volatility, and extendibility to high voltage capability.

Interplay of hot electrons from localized and propagating plasmons.

Science.gov (United States)

Hoang, Chung V; Hayashi, Koki; Ito, Yasuo; Gorai, Naoki; Allison, Giles; Shi, Xu; Sun, Quan; Cheng, Zhenzhou; Ueno, Kosei; Goda, Keisuke; Misawa, Hiroaki

2017-10-03

Plasmon-induced hot-electron generation has recently received considerable interest and has been studied to develop novel applications in optoelectronics, photovoltaics and green chemistry. Such hot electrons are typically generated from either localized plasmons in metal nanoparticles or propagating plasmons in patterned metal nanostructures. Here we simultaneously generate these heterogeneous plasmon-induced hot electrons and exploit their cooperative interplay in a single metal-semiconductor device to demonstrate, as an example, wavelength-controlled polarity-switchable photoconductivity. Specifically, the dual-plasmon device produces a net photocurrent whose polarity is determined by the balance in population and directionality between the hot electrons from localized and propagating plasmons. The current responsivity and polarity-switching wavelength of the device can be varied over the entire visible spectrum by tailoring the hot-electron interplay in various ways. This phenomenon may provide flexibility to manipulate the electrical output from light-matter interaction and offer opportunities for biosensors, long-distance communications, and photoconversion applications.Plasmon-induced hot electrons have potential applications spanning photodetection and photocatalysis. Here, Hoang et al. study the interplay between hot electrons generated by localized and propagating plasmons, and demonstrate wavelength-controlled polarity-switchable photoconductivity.

The effect of hot water injection on sandstone permeability

DEFF Research Database (Denmark)

Rosenbrand, Esther; Haugwitz, Christian; Jacobsen, Peter Sally Munch

2014-01-01

Seasonal energy storage can be achieved by hot water injection in geothermal sandstone aquifers. We present an analysis of literature data in combination with new short-term flow through permeability experiments in order to address physical and physico-chemical mechanisms that can alter...

Voltage Controlled Hot Carrier Injection Enables Ohmic Contacts Using Au Island Metal Films on Ge.

Science.gov (United States)

Ganti, Srinivas; King, Peter J; Arac, Erhan; Dawson, Karl; Heikkilä, Mikko J; Quilter, John H; Murdoch, Billy; Cumpson, Peter; O'Neill, Anthony

2017-08-23

We introduce a new approach to creating low-resistance metal-semiconductor ohmic contacts, illustrated using high conductivity Au island metal films (IMFs) on Ge, with hot carrier injection initiated at low applied voltage. The same metallization process simultaneously allows ohmic contact to n-Ge and p-Ge, because hot carriers circumvent the Schottky barrier formed at metal/n-Ge interfaces. A 2.5× improvement in contact resistivity is reported over previous techniques to achieve ohmic contact to both n- and p- semiconductor. Ohmic contacts at 4.2 K confirm nonequilibrium current transport. Self-assembled Au IMFs are strongly orientated to Ge by annealing near the Au/Ge eutectic temperature. Au IMF nanostructures form, provided the Au layer is below a critical thickness. We anticipate that optimized IMF contacts may have applicability to many material systems. Optimizing this new paradigm for metal-semiconductor contacts offers the prospect of improved nanoelectronic systems and the study of voltage controlled hot holes and electrons.

Analysis of large break loss of coolant accident with simultaneous injection into cold leg and hot leg

International Nuclear Information System (INIS)

Luo Bangqi

1997-01-01

When a large break loss of coolant accident occurs, the most part of the safety injection water injected into the cold leg by the safety injection system will flow through the channel between the pressure vessel and the barrel out of the break into the containment, only a little part of the safety injection water can flow into the reactor core. If the safety injection can inject into both the cold leg and the hot leg simultaneously, the safety injection water injected from the cold leg will flow into the core more easily, because the safety injection water injected from the hot leg will carry out more heat from the upper plenum and the core, so the upper plenum and the core is depressed. In addition, a small part of the safety injection water injected from the hot leg will flow down in the core after impinging the guide tubes in the upper plenum, so the core will get more safety injection water than only cold leg injection, and the core will be much safer

Establishment of design space for high current gain in III-N hot electron transistors

Science.gov (United States)

Gupta, Geetak; Ahmadi, Elaheh; Suntrup, Donald J., III; Mishra, Umesh K.

2018-01-01

This paper establishes the design space of III-N hot electron transistors (HETs) for high current gain by designing and fabricating HETs with scaled base thickness. The device structure consists of GaN-based emitter, base and collector regions where emitter and collector barriers are implemented using AlN and InGaN layers, respectively, as polarization-dipoles. Electrons tunnel through the AlN layer to be injected into the base at a high energy where they travel in a quasi-ballistic manner before being collected. Current gain increases from 1 to 3.5 when base thickness is reduced from 7 to 4 nm. The extracted mean free path (λ mfp) is 5.8 nm at estimated injection energy of 1.5 eV.

Theoretical study of hydraulic jump during circular horizontal hot leg injection in pressurized water reactor

International Nuclear Information System (INIS)

El Hawary, Shehab; Abu-Elyazeed, Osayed S.M.; Fahmy, Adel Alyan; Meglaa, Khairy

2016-01-01

Highlights: • The model is developed to predict the occurrence of onset hydraulic jump in a circular pipe. • Theoretical results are in agreement with experimental results and theory. • Effects of diameter of the injection pipe, Froude number and injected coolant mass are studied. - Abstract: One important phenomenon occurring during Loss of Coolant Accident (LOCA) is Counter-Current Flow Limitation (CCFL). The incidence of such CCFL is introduced by the onset of hydraulic jump. In the present work, a one dimensional model was modified to fit circular hot channel. The model was used to study the factors affecting the initial Froude number, the location of the occurrence of the hydraulic jump, and the critical coolant flow depth during circular horizontal hot leg injection in US-APWR Mitsubishi Reactor. The results showed good agreement with published experimental data of the Upper Plenum Test Facility (UPTF) at Mannheim, Germany. It was found that higher injected coolant mass flow rate increases the initial Froude number, the location of the occurrence of the hydraulic jump, and the critical injection depth divided by the diameter of the injection pipe. Such behavior is thought to be due to the increase of the inertia force by increasing of the injected coolant mass flow rate and the inverse of the diameter of the injection pipe. It was found also that, the location of the occurrence of hydraulic jump increases with decreasing load effect. Therefore, these results reveal that the avoidance of CCFL as well as hydraulic jump through hot leg at maximum load can be achieved by decreasing the distance between the injection point and the pressure vessel to below 0.3 m, and with diameter of 4 in (10.16 cm) as the design diameter of the injection pipe in US-APWR Mitsubishi Reactor. Moreover, the maximum critical depth (56 cm) is less than the diameter of the hot leg (78.74 cm) at an injected coolant mass flow of 400 kg/s, and with diameter of 4 in (10.16 cm) as the

Study of the effect of injecting cold or hot water on the operation of an oil field

Energy Technology Data Exchange (ETDEWEB)

Gusein-Zade, M A; Kolosovskaya, A K; Lebedev, V V; Chicherov, L G

1968-11-01

Several Soviet reservoirs contain either highly paraffinic or viscous crude oils, where recovery by an ordinary waterflood is poor. Under such circumstances, hot water injection appears to be advantageous. Hot water injection is advisable when: (1) the reservoir is heterogeneous and contains low-permeability sections; (2) the oil is saturated with paraffin at reservoir temperature; and (3) reservoir pressure is only slightly higher than static pressure. In Uzen field, hot water injection should recover 1.5 times more oil than would be recovered with cold water. Various problems involved with hot water injection such as equipment and methods of heating the water, transportation of the water of the wellhead, heat losses in transport of hot water, and well equipment for handling hot water are discussed. Calculations indicate that it should be possible to transport 100/sup 0/C water through a 5 km pipeline with a 4/sup 0/ to 6/sup 0/C temperature drop; then deliver to the well bottom at a temperature of 90/sup 0/ to 92/sup 0/C.

Optically controlled seeding of Raman forward scattering and injection of electrons in a self-modulated laser-wakefield accelerator

International Nuclear Information System (INIS)

Chen, W.-T.; Chien, T.-Y.; Lee, C.-H.; Lin, J.-Y.; Wang, J.; Chen, S.-Y.

2004-01-01

Optical seeding of plasma waves and the injection of electrons are key issues in self-modulated laser-wakefield accelerators. By implementing a copropagating laser prepulse with proper timing, we are able to control the growth of Raman forward scattering and the production of accelerated electrons. The dependence of the Raman intensity on prepulse timing indicates that the seeding of Raman forward scattering is dominated by the ionization-induced wakefield, and the dependence of the divergence and number of accelerated electrons further reveals that the stimulated Raman backward scattering of the prepulse plays the essential role of injecting hot electrons into the fast plasma wave driven by the main pulse

Evaluation of pain and inflammation associated with hot iron branding and microchip transponder injection in horses.

Science.gov (United States)

Lindegaard, Casper; Vaabengaard, Dorte; Christophersen, Mogens T; Ekstøm, Claus T; Fjeldborg, Julie

2009-07-01

To compare effects of hot iron branding and microchip transponder injection regarding aversive behavioral reactions indicative of pain and inflammation in horses. 7 adult horses. In a randomized controlled clinical crossover study, behavioral reactions to hot iron branding and microchip transponder injection were scored by 4 observers. Local and systemic inflammation including allodynia were assessed and compared by use of physiologic and biochemical responses obtained repeatedly for the 168-hour study period. Serum cortisol concentration was measured repeatedly throughout the first 24 hours of the study. Sham treatments were performed 1 day before and 7 days after treatments. Hot iron branding elicited a significantly stronger aversive reaction indicative of pain than did microchip transponder injection (odds ratio [OR], 12.83). Allodynia quantified by means of skin sensitivity to von Frey monofilaments was significantly greater after hot iron branding than after microchip transponder injection (OR, 2.59). Neither treatment induced signs of spontaneously occurring pain that were observed during the remaining study period, and neither treatment induced increased serum cortisol concentrations. Comparison with sham treatments indicated no memory of an unpleasant event. The hot iron branding areas had significantly increased skin temperature and swelling (OR, 14.6). Systemic inflammation as measured via serum amyloid A concentration was not detected after any of the treatments. Microchip transponder injection induced less signs of pain and inflammation and did not seem to pose a higher long-term risk than hot iron branding. Consequently, results indicated that hot iron branding does inflict more pain and should be abandoned where possible.

Emerging non-volatile memories

CERN Document Server

Hong, Seungbum; Wouters, Dirk

2014-01-01

This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory. This book also: Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others. Provides an overview of non-volatile memory fundamentals. Broadens readers' understanding of future trends in non-volatile memories.

Organic Nonvolatile Memory Devices Based on Ferroelectricity

NARCIS (Netherlands)

Naber, Ronald C. G.; Asadi, Kamal; Blom, Paul W. M.; de Leeuw, Dago M.; de Boer, Bert

2010-01-01

A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low-cost memory technology. In this Review Article we discuss the latest developments in this area

Organic nonvolatile memory devices based on ferroelectricity

NARCIS (Netherlands)

Naber, R.C.G.; Asadi, K.; Blom, P.W.M.; Leeuw, D.M. de; Boer, B. de

2010-01-01

A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low-cost memory technology. In this Review Article we discuss the latest developments in this area

Hot-electron nanoscopy using adiabatic compression of surface plasmons

KAUST Repository

Giugni, Andrea; Torre, Bruno; Toma, Andrea; Francardi, Marco; Malerba, Mario; Alabastri, Alessandro; Proietti Zaccaria, Remo; Stockman, Mark Mark; Di Fabrizio, Enzo M.

2013-01-01

Surface plasmon polaritons are a central concept in nanoplasmonics and have been exploited to develop ultrasensitive chemical detection platforms, as well as imaging and spectroscopic techniques at the nanoscale. Surface plasmons can decay to form highly energetic (or hot) electrons in a process that is usually thought to be parasitic for applications, because it limits the lifetime and propagation length of surface plasmons and therefore has an adverse influence on the functionality of nanoplasmonic devices. Recently, however, it has been shown that hot electrons produced by surface plasmon decay can be harnessed to produce useful work in photodetection, catalysis and solar energy conversion. Nevertheless, the surface-plasmon-to-hot-electron conversion efficiency has been below 1% in all cases. Here we show that adiabatic focusing of surface plasmons on a Schottky diode-terminated tapered tip of nanoscale dimensions allows for a plasmon-to-hot-electron conversion efficiency of ∼30%. We further demonstrate that, with such high efficiency, hot electrons can be used for a new nanoscopy technique based on an atomic force microscopy set-up. We show that this hot-electron nanoscopy preserves the chemical sensitivity of the scanned surface and has a spatial resolution below 50 nm, with margins for improvement.

Hot-electron nanoscopy using adiabatic compression of surface plasmons

KAUST Repository

Giugni, Andrea

2013-10-20

Surface plasmon polaritons are a central concept in nanoplasmonics and have been exploited to develop ultrasensitive chemical detection platforms, as well as imaging and spectroscopic techniques at the nanoscale. Surface plasmons can decay to form highly energetic (or hot) electrons in a process that is usually thought to be parasitic for applications, because it limits the lifetime and propagation length of surface plasmons and therefore has an adverse influence on the functionality of nanoplasmonic devices. Recently, however, it has been shown that hot electrons produced by surface plasmon decay can be harnessed to produce useful work in photodetection, catalysis and solar energy conversion. Nevertheless, the surface-plasmon-to-hot-electron conversion efficiency has been below 1% in all cases. Here we show that adiabatic focusing of surface plasmons on a Schottky diode-terminated tapered tip of nanoscale dimensions allows for a plasmon-to-hot-electron conversion efficiency of ∼30%. We further demonstrate that, with such high efficiency, hot electrons can be used for a new nanoscopy technique based on an atomic force microscopy set-up. We show that this hot-electron nanoscopy preserves the chemical sensitivity of the scanned surface and has a spatial resolution below 50 nm, with margins for improvement.

Ab initio study of hot electrons in GaAs

OpenAIRE

Bernardi, Marco; Vigil-Fowler, Derek; Ong, Chin Shen; Neaton, Jeffrey B.; Louie, Steven G.

2015-01-01

Hot carrier dynamics critically impacts the performance of electronic, optoelectronic, photovoltaic, and plasmonic devices. Hot carriers lose energy over nanometer lengths and picosecond timescales and thus are challenging to study experimentally, whereas calculations of hot carrier dynamics are cumbersome and dominated by empirical approaches. In this work, we present ab initio calculations of hot electrons in gallium arsenide (GaAs) using density functional theory and many-body perturbation...

A study on the effect of the injected absolute ethanol and hot-saline in the normal liver of rat

International Nuclear Information System (INIS)

Rhim, Hyun Chul; Hong, Eun Kyung; Cho, On Koo; Song, Soon Young; Koh, Byung Hee; Seo, Heung Suk; Hahm, Chang Kok; Park, Hwon Kyum

1995-01-01

To compare the effect of local injection therapy with absolute ethanol and hot-saline in the normal liver of rat. An experimental study was performed with the normal liver of 52 rats. The resected livers were pathologically analyzed on three days, one week, two weeks, and four weeks after injection of 0.1 ml absolute ethanol and hot-saline. The assessment was done in view of 1) main pathologic changes on time, 2) pattern of inflammatory cell infiltration, 3) measurement of necrotic area, 4) effect on vascular and biliary tracts adjacent to necrotic area, and 5) extrahepatic peritoneal adhesion. The main pathologic changes were acute necrosis with inflammation for three days group and secondary regenerative fibrosis in all groups. The degree of necrosis was significantly more severe in absolute ethanol injection group, demonstrating larger necrotic area, than hot-saline injection group. The effect on vessels and bile ducts adjacent to the necrotic area was almost not seen in both groups. The extrahepatic peritoneal adhesion was noted in both groups, but the degree was more prominent in the absolute ethanol injection group than hot-saline injection group. Absolute ethanol is superior to hot-saline in the necrotic effect of percutaneous injection therapy. However, hot-saline could be applied in case of the borderline area between mass and adjacent normal liver or the subcapsular mass

Direct probing of electron and hole trapping into nano-floating-gate in organic field-effect transistor nonvolatile memories

Energy Technology Data Exchange (ETDEWEB)

Cui, Ze-Qun; Wang, Shun; Chen, Jian-Mei; Gao, Xu; Dong, Bin, E-mail: wangsd@suda.edu.cn, E-mail: chilf@suda.edu.cn, E-mail: bdong@suda.edu.cn; Chi, Li-Feng, E-mail: wangsd@suda.edu.cn, E-mail: chilf@suda.edu.cn, E-mail: bdong@suda.edu.cn; Wang, Sui-Dong, E-mail: wangsd@suda.edu.cn, E-mail: chilf@suda.edu.cn, E-mail: bdong@suda.edu.cn [Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123 (China)

2015-03-23

Electron and hole trapping into the nano-floating-gate of a pentacene-based organic field-effect transistor nonvolatile memory is directly probed by Kelvin probe force microscopy. The probing is straightforward and non-destructive. The measured surface potential change can quantitatively profile the charge trapping, and the surface characterization results are in good accord with the corresponding device behavior. Both electrons and holes can be trapped into the nano-floating-gate, with a preference of electron trapping than hole trapping. The trapped charge quantity has an approximately linear relation with the programming/erasing gate bias, indicating that the charge trapping in the device is a field-controlled process.

Direct probing of electron and hole trapping into nano-floating-gate in organic field-effect transistor nonvolatile memories

International Nuclear Information System (INIS)

Cui, Ze-Qun; Wang, Shun; Chen, Jian-Mei; Gao, Xu; Dong, Bin; Chi, Li-Feng; Wang, Sui-Dong

2015-01-01

Electron and hole trapping into the nano-floating-gate of a pentacene-based organic field-effect transistor nonvolatile memory is directly probed by Kelvin probe force microscopy. The probing is straightforward and non-destructive. The measured surface potential change can quantitatively profile the charge trapping, and the surface characterization results are in good accord with the corresponding device behavior. Both electrons and holes can be trapped into the nano-floating-gate, with a preference of electron trapping than hole trapping. The trapped charge quantity has an approximately linear relation with the programming/erasing gate bias, indicating that the charge trapping in the device is a field-controlled process

Nonplasmonic Hot-Electron Photocurrents from Mn-Doped Quantum Dots in Photoelectrochemical Cells.

Science.gov (United States)

Dong, Yitong; Rossi, Daniel; Parobek, David; Son, Dong Hee

2016-03-03

We report the measurement of the hot-electron current in a photoelectrochemical cell constructed from a glass/ITO/Al2 O3 (ITO=indium tin oxide) electrode coated with Mn-doped quantum dots, where hot electrons with a large excess kinetic energy were produced through upconversion of the excitons into hot electron hole pairs under photoexcitation at 3 eV. In our recent study (J. Am. Chem. Soc. 2015, 137, 5549), we demonstrated the generation of hot electrons in Mn-doped II-VI semiconductor quantum dots and their usefulness in photocatalytic H2 production reaction, taking advantage of the more efficient charge transfer of hot electrons compared with band-edge electrons. Here, we show that hot electrons produced in Mn-doped CdS/ZnS quantum dots possess sufficient kinetic energy to overcome the energy barrier from a 5.4-7.5 nm thick Al2 O3 layer producing a hot-electron current in photoelectrochemical cell. This work demonstrates the possibility of harvesting hot electrons not only at the interface of the doped quantum dot surface, but also far away from it, thus taking advantage of the capability of hot electrons for long-range electron transfer across a thick energy barrier. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Dual-mode operation of 2D material-base hot electron transistors

KAUST Repository

Lan, Yann-Wen; Jr., Carlos M. Torres,; Zhu, Xiaodan; Qasem, Hussam; Adleman, James R.; Lerner, Mitchell B.; Tsai, Shin-Hung; Shi, Yumeng; Li, Lain-Jong; Yeh, Wen-Kuan; Wang, Kang L.

2016-01-01

Vertical hot electron transistors incorporating atomically-thin 2D materials, such as graphene or MoS2, in the base region have been proposed and demonstrated in the development of electronic and optoelectronic applications. To the best of our knowledge, all previous 2D material-base hot electron transistors only considered applying a positive collector-base potential (V-CB > 0) as is necessary for the typical unipolar hot-electron transistor behavior. Here we demonstrate a novel functionality, specifically a dual-mode operation, in our 2D material-base hot electron transistors (e.g. with either graphene or MoS2 in the base region) with the application of a negative collector-base potential (V-CB < 0). That is, our 2D material-base hot electron transistors can operate in either a hot-electron or a reverse-current dominating mode depending upon the particular polarity of VCB. Furthermore, these devices operate at room temperature and their current gains can be dynamically tuned by varying VCB. We anticipate our multi-functional dual-mode transistors will pave the way towards the realization of novel flexible 2D material-based high-density and low-energy hot-carrier electronic applications.

Dual-mode operation of 2D material-base hot electron transistors

KAUST Repository

Lan, Yann-Wen

2016-09-01

Vertical hot electron transistors incorporating atomically-thin 2D materials, such as graphene or MoS2, in the base region have been proposed and demonstrated in the development of electronic and optoelectronic applications. To the best of our knowledge, all previous 2D material-base hot electron transistors only considered applying a positive collector-base potential (V-CB > 0) as is necessary for the typical unipolar hot-electron transistor behavior. Here we demonstrate a novel functionality, specifically a dual-mode operation, in our 2D material-base hot electron transistors (e.g. with either graphene or MoS2 in the base region) with the application of a negative collector-base potential (V-CB < 0). That is, our 2D material-base hot electron transistors can operate in either a hot-electron or a reverse-current dominating mode depending upon the particular polarity of VCB. Furthermore, these devices operate at room temperature and their current gains can be dynamically tuned by varying VCB. We anticipate our multi-functional dual-mode transistors will pave the way towards the realization of novel flexible 2D material-based high-density and low-energy hot-carrier electronic applications.

Hot-electron-based solar energy conversion with metal-semiconductor nanodiodes

Science.gov (United States)

Lee, Young Keun; Lee, Hyosun; Lee, Changhwan; Hwang, Euyheon; Park, Jeong Young

2016-06-01

Energy dissipation at metal surfaces or interfaces between a metal and a dielectric generally results from elementary excitations, including phonons and electronic excitation, once external energy is deposited to the surface/interface during exothermic chemical processes or an electromagnetic wave incident. In this paper, we outline recent research activities to develop energy conversion devices based on hot electrons. We found that photon energy can be directly converted to hot electrons and that hot electrons flow through the interface of metal-semiconductor nanodiodes where a Schottky barrier is formed and the energy barrier is much lower than the work function of the metal. The detection of hot electron flow can be successfully measured using the photocurrent; we measured the photoyield of photoemission with incident photons-to-current conversion efficiency (IPCE). We also show that surface plasmons (i.e. the collective oscillation of conduction band electrons induced by interaction with an electromagnetic field) are excited on a rough metal surface and subsequently decay into secondary electrons, which gives rise to enhancement of the IPCE. Furthermore, the unique optical behavior of surface plasmons can be coupled with dye molecules, suggesting the possibility for producing additional channels for hot electron generation.

Stabilizing effects of hot electrons on low frequency plasma drift waves

International Nuclear Information System (INIS)

Huang Chaosong; Qiu Lijian; Ren Zhaoxing

1988-01-01

The MHD equation is used to study the stabilization of low frequency drift waves driven by density gradient of plasma in a hot electron plasma. The dispersion relation is derived, and the stabilizing effects of hot electrons are discussed. The physical mechanism for hot electron stabilization of the low frequency plasma perturbations is charge uncovering due to the hot electron component, which depends only on α, the ratio of N h /N i , but not on the value of β h . The hot electrons can reduce the growth rate of the interchange mode and drift wave driven by the plasma, and suppress the enomalous plasma transport caused by the drift wave. Without including the effectof β h , the stabilization of the interchange mode requires α≅2%, and the stabilization of the drift wave requires α≅40%. The theoretical analyses predict that the drift wave is the most dangerous low frequency instability in the hot electron plasma

Hydrogen injection device in BWR type reactor

International Nuclear Information System (INIS)

Takagi, Jun-ichi; Kubo, Koji.

1988-01-01

Purpose: To reduce the increasing ratio of main steam system dose rate due to N-16 activity due to excess hydrogen injection in the hydrogen injection operation of BWR type reactors. Constitution: There are provided a hydrogen injection mechanism for injecting hydrogen into primary coolants of a BWR type reactor, and a chemical injection device for injecting chemicals such as methanol, which makes nitrogen radioisotopes resulted in the reactor water upon hydrogen injection non-volatile, into the pressure vessel separately from hydrogen. Injected hydrogen and the chemicals are not reacted in the feedwater system, but the reaction proceeds due to the presence of radioactive rays after the injection into the pressure vessel. Then, hydrogen causes re-combination in the downcomer portion to reduce the dissolved oxygen concentration. Meanwhile, about 70 % of the chemicals is supplied by means of a jet pump directly to the reactor core, thereby converting the chemical form of N-16 in the reactor core more oxidative (non-volatile). (Kawakami, Y.)

Electron injection in microtron

International Nuclear Information System (INIS)

Axinescu, S.

1977-01-01

A review of the methods of injecting electrons in the microtron is presented. A special attention is paid to efficient injection systems developed by Wernholm and Kapitza. A comparison of advantages and disadvantages of both systems is made in relation to the purpose of the microtron. (author)

Phosphorene/ZnO Nano-Heterojunctions for Broadband Photonic Nonvolatile Memory Applications.

Science.gov (United States)

Hu, Liang; Yuan, Jun; Ren, Yi; Wang, Yan; Yang, Jia-Qin; Zhou, Ye; Zeng, Yu-Jia; Han, Su-Ting; Ruan, Shuangchen

2018-06-10

High-performance photonic nonvolatile memory combining photosensing and data storage with low power consumption ensures the energy efficiency of computer systems. This study first reports in situ derived phosphorene/ZnO hybrid heterojunction nanoparticles and their application in broadband-response photonic nonvolatile memory. The photonic nonvolatile memory consistently exhibits broadband response from ultraviolet (380 nm) to near infrared (785 nm), with controllable shifts of the SET voltage. The broadband resistive switching is attributed to the enhanced photon harvesting, a fast exciton separation, as well as the formation of an oxygen vacancy filament in the nano-heterojunction. In addition, the device exhibits an excellent stability under air exposure compared with reported pristine phosphorene-based nonvolatile memory. The superior antioxidation capacity is believed to originate from the fast transfer of lone-pair electrons of phosphorene. The unique assembly of phosphorene/ZnO nano-heterojunctions paves the way toward multifunctional broadband-response data-storage techniques. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

UPTF-TRAM test A3. Turn-over of the hot-leg injected ECC in the steam generator direction

International Nuclear Information System (INIS)

Tenckhoff; Brand, B.; Weiss, P.

1993-06-01

The UPTF TRAM test A3 was a separate effects test to investigate the interaction between the hot leg-injected ECC and the single-phase or two-phase natural circulation in the hot leg in the case of an SBLOCA in a PWR. The experimental investigation of 7 runs was mainly concentrated on the following phenomena: - Transport of hot leg injected ECC water to the upper plenum or in the direction of steam generator, depending on the loop mass flow, -Utilization of the condensation potential of ECC water, - Mixing of the saturated water with the ECC water, - Effect of hot leg injection on the flow phenomena in the hot leg, - Effect of pressure (3 and 15 bar) on the scaling and hence the verification of the scaling concept applied. A preliminary evaluation of the test is presented in the Quick Look Report. (orig.) [de

Studies of instabilities and waves in a mirror confined hot electron plasma

International Nuclear Information System (INIS)

Huang Chaosong; Qiu Lijian; Ren Zhaoxing

1989-01-01

The stability of hot electron plasmas is studied. The hot electron component can stabilize the low frequency drift wave and the interchange mode driven by the plasma, which depends only on α=N h /N i , the density ratio of the hot electrons to the plasma ions, but not on the beta value and the annular structure of the hot electrons. Stabilization of the drift wave occurs for α > 40%, and that of the interchange mode for α > 5%, which allows the prediction that the interchange mode can be suppressed in hot electron plasma experiments. The experiments have been conducted in a simple mirror machine. It is observed that the plasma drives a drift wave at 40 kHz and an interchange mode at about 100 kHz. The fluctuation amplitude of the drift wave is much higher than that of the interchange mode. The hot electrons reduce the density gradient, the fluctuation amplitude and the radial loss of the plasma. On the other hand, the hot electrons drive the interchange mode and drift wave in the ion cyclotron frequency region. The effects of a cold plasma on hot electron perturbations are discussed. (author). 10 refs, 6 figs

An experimental determination of the hot electron ring geometry in a Bumpy Torus and its implications for Bumpy Torus stability

International Nuclear Information System (INIS)

Hillis, D.L.; Wilgen, J.B.; Bigelow, T.S.; Jaeger, E.F.; Swain, D.W.; Hankins, O.E.; Juhala, R.E.

1986-10-01

The hot electron rings of the ELMO Bumpy Torus (EBT) [Plasma Physics and Controlled Nuclear Fusion (IAEA, Vienna, 1975), Vol. II, p. 141] are formed by electron cyclotron resonance heating (ECRH) and have an electron temperature of 350 to 500 keV. The original intention of these hot electron rings was to provide a local minimum in the magnetic field and, thereby, stabilize the simple interchange and flute modes, which are inherent in a closed field line bumpy torus. To evaluate the electron energy density of the EBT rings and determine if enough stored energy is present to provide a local minimum in the magnetic field, a detailed understanding of the spatial distribution of the rings is imperative. The purpose of this report is to measure the ring thickness and investigate its implications for bumpy torus stability. The spatial location and radial profile of the hot electron ring are measured with a unique metal ball pellet injector, which injects small metallic balls into the EBT ring plasma. From these measurements the radial extent (or ring thickness) is about 5 to 7 cm full width at half maximum for typical EBT operation, which is much larger than previously expected. These measurements and recent modeling of the EBT plasma indicate that the hot electron ring's stored energy may not be sufficient to produce a local minimum in the magnetic field

The effect of hot electrons and surface plasmons on heterogeneous catalysis

International Nuclear Information System (INIS)

Kim, Sun Mi; Lee, Si Woo; Moon, Song Yi; Park, Jeong Young

2016-01-01

Hot electrons and surface-plasmon-driven chemistry are amongst the most actively studied research subjects because they are deeply associated with energy dissipation and the conversion processes at the surface and interfaces, which are still open questions and key issues in the surface science community. In this topical review, we give an overview of the concept of hot electrons or surface-plasmon-mediated hot electrons generated under various structural schemes (i.e. metals, metal–semiconductor, and metal–insulator–metal) and their role affecting catalytic activity in chemical reactions. We highlight recent studies on the relation between hot electrons and catalytic activity on metallic surfaces. We discuss possible mechanisms for how hot electrons participate in chemical reactions. We also introduce controlled chemistry to describe specific pathways for selectivity control in catalysis on metal nanoparticles. (topical review)

Dual-mode operation of 2D material-base hot electron transistors.

Science.gov (United States)

Lan, Yann-Wen; Torres, Carlos M; Zhu, Xiaodan; Qasem, Hussam; Adleman, James R; Lerner, Mitchell B; Tsai, Shin-Hung; Shi, Yumeng; Li, Lain-Jong; Yeh, Wen-Kuan; Wang, Kang L

2016-09-01

Vertical hot electron transistors incorporating atomically-thin 2D materials, such as graphene or MoS2, in the base region have been proposed and demonstrated in the development of electronic and optoelectronic applications. To the best of our knowledge, all previous 2D material-base hot electron transistors only considered applying a positive collector-base potential (VCB > 0) as is necessary for the typical unipolar hot-electron transistor behavior. Here we demonstrate a novel functionality, specifically a dual-mode operation, in our 2D material-base hot electron transistors (e.g. with either graphene or MoS2 in the base region) with the application of a negative collector-base potential (VCB transistors can operate in either a hot-electron or a reverse-current dominating mode depending upon the particular polarity of VCB. Furthermore, these devices operate at room temperature and their current gains can be dynamically tuned by varying VCB. We anticipate our multi-functional dual-mode transistors will pave the way towards the realization of novel flexible 2D material-based high-density and low-energy hot-carrier electronic applications.

Carbon nanomaterials for non-volatile memories

Science.gov (United States)

Ahn, Ethan C.; Wong, H.-S. Philip; Pop, Eric

2018-03-01

Carbon can create various low-dimensional nanostructures with remarkable electronic, optical, mechanical and thermal properties. These features make carbon nanomaterials especially interesting for next-generation memory and storage devices, such as resistive random access memory, phase-change memory, spin-transfer-torque magnetic random access memory and ferroelectric random access memory. Non-volatile memories greatly benefit from the use of carbon nanomaterials in terms of bit density and energy efficiency. In this Review, we discuss sp2-hybridized carbon-based low-dimensional nanostructures, such as fullerene, carbon nanotubes and graphene, in the context of non-volatile memory devices and architectures. Applications of carbon nanomaterials as memory electrodes, interfacial engineering layers, resistive-switching media, and scalable, high-performance memory selectors are investigated. Finally, we compare the different memory technologies in terms of writing energy and time, and highlight major challenges in the manufacturing, integration and understanding of the physical mechanisms and material properties.

Sheath formation of a plasma containing multiply charged ions, cold and hot electrons, and emitted electrons

International Nuclear Information System (INIS)

You, H.J.

2012-01-01

It is quite well known that ion confinement is an important factor in an electron cyclotron resonance ion source (ECRIS) as it is closely related to the plasma potential. A model of sheath formation was extended to a plasma containing multiply charged ions (MCIs), cold and hot electrons, and secondary electrons emitted either by MCIs or hot electrons. In the model, a modification of the 'Bohm criterion' was given, the sheath potential drop and the critical emission condition were also analyzed. It appears that the presence of hot electrons and emitted electrons strongly affects the sheath formation so that smaller hot electrons and larger emission current result in reduced sheath potential (or floating potential). However the sheath potential was found to become independent of the emission current J when J > J c , (where J c is the critical emission current. The paper is followed by the associated poster

Radial structure of curvature-driven instabilities in a hot-electron plasma

International Nuclear Information System (INIS)

Spong, D.A.; Berk, H.L.; Van Dam, J.W.

1984-01-01

A nonlocal analysis of curvature-driven instabilities for a hot-electron ring interacting with a warm background plasma has been made. Four different instability modes characteristic of hot-electron plasmas have been examined: the high-frequency hot-electron interchange (at frequencies larger than the ion-cyclotron frequency), the compressional Alfven instability, the interacting background pressure-driven interchange, and the conventional hot-electron interchange (at frequencies below the ion-cyclotron frequency). The decoupling condition between core and hot-electron plasmas has also been examined, and its influence on the background and hot-electron interchange stability boundaries has been studied. The assumed equilibrium plasma profiles and resulting radial mode structure differ somewhat from those used in previous local analytic estimates; however, when the analysis is calibrated to the appropriate effective radial wavelength of the nonlocal calculation, reasonable agreement is obtained. Comparison with recent experimental measurements indicates that certain of these modes may play a role in establishing operating boundaries for the ELMO Bumpy Torus-Scale (EBT-S) experiment. The calculations given here indicate the necessity of having core plasma outside the ring to prevent the destabilizing wave resonance of the precessional mode with a cold plasma

Jumping-droplet electronics hot-spot cooling

Science.gov (United States)

Oh, Junho; Birbarah, Patrick; Foulkes, Thomas; Yin, Sabrina L.; Rentauskas, Michelle; Neely, Jason; Pilawa-Podgurski, Robert C. N.; Miljkovic, Nenad

2017-03-01

Demand for enhanced cooling technologies within various commercial and consumer applications has increased in recent decades due to electronic devices becoming more energy dense. This study demonstrates jumping-droplet based electric-field-enhanced (EFE) condensation as a potential method to achieve active hot spot cooling in electronic devices. To test the viability of EFE condensation, we developed an experimental setup to remove heat via droplet evaporation from single and multiple high power gallium nitride (GaN) transistors acting as local hot spots (4.6 mm × 2.6 mm). An externally powered circuit was developed to direct jumping droplets from a copper oxide (CuO) nanostructured superhydrophobic surface to the transistor hot spots by applying electric fields between the condensing surface and the transistor. Heat transfer measurements were performed in ambient air (22-25 °C air temperature, 20%-45% relative humidity) to determine the effect of gap spacing (2-4 mm), electric field (50-250 V/cm) and applied heat flux (demonstrated to 13 W/cm2). EFE condensation was shown to enhance the heat transfer from the local hot spot by ≈200% compared to cooling without jumping and by 20% compared to non-EFE jumping. Dynamic switching of the electric field for a two-GaN system reveals the potential for active cooling of mobile hot spots. The opportunity for further cooling enhancement by the removal of non-condensable gases promises hot spot heat dissipation rates approaching 120 W/cm2. This work provides a framework for the development of active jumping droplet based vapor chambers and heat pipes capable of spatial and temporal thermal dissipation control.

Jumping-droplet electronics hot-spot cooling

International Nuclear Information System (INIS)

Oh, Junho; Birbarah, Patrick; Foulkes, Thomas; Yin, Sabrina L.; Rentauskas, Michelle

2017-01-01

Demand for enhanced cooling technologies within various commercial and consumer applications has increased in recent decades due to electronic devices becoming more energy dense. This study demonstrates jumping-droplet based electric-field-enhanced (EFE) condensation as a potential method to achieve active hot spot cooling in electronic devices. To test the viability of EFE condensation, we developed an experimental setup to remove heat via droplet evaporation from single and multiple high power gallium nitride (GaN) transistors acting as local hot spots (4.6 mm x 2.6 mm). An externally powered circuit was developed to direct jumping droplets from a copper oxide (CuO) nanostructured superhydrophobic surface to the transistor hot spots by applying electric fields between the condensing surface and the transistor. Heat transfer measurements were performed in ambient air (22-25°C air temperature, 20-45% relative humidity) to determine the effect of gap spacing (2-4 mm), electric field (50-250 V/cm), and heat flux (demonstrated to 13 W/cm"2). EFE condensation was shown to enhance the heat transfer from the local hot spot by ≈ 200% compared to cooling without jumping and by 20% compared to non-EFE jumping. Dynamic switching of the electric field for a two-GaN system reveals the potential for active cooling of mobile hot spots. The opportunity for further cooling enhancement by the removal of non-condensable gases promises hot spot heat dissipation rates approaching 120 W/cm"2. Finally, this work provides a framework for the development of active jumping droplet based vapor chambers and heat pipes capable of spatial and temporal thermal dissipation control.

Ideal magnetohydrodynamic simulations of unmagnetized dense plasma jet injection into a hot strongly magnetized plasma

OpenAIRE

Liu, Wei; Hsu, Scott C.

2010-01-01

We present results from three-dimensional ideal magnetohydrodynamic simulations of unmagnetized dense plasma jet injection into a uniform hot strongly magnetized plasma, with the aim of providing insight into core fueling of a tokamak with parameters relevant for ITER and NSTX (National Spherical Torus Experiment). Unmagnetized dense plasma jet injection is similar to compact toroid injection but with much higher plasma density and total mass, and consequently lower required injection velocit...

Measurements of hot spots and electron beams in Z-pinch devices

International Nuclear Information System (INIS)

Deeney, C.

1988-04-01

Hot spots and Electron Beams have been observed in different types of Z-pinches. There is, however, no conclusive evidence on how either are formed although there has been much theoretical interest in both these phenomena. In this thesis, nanosecond time resolved and time correlated, X-ray and optical diagnostics, are performed on two different types of Z-pinch: a 4 kJ, 30 kV Gas Puff Z-pinch and a 28 kJ, 60 kV Plasma Focus. The aim being to study hot spots and electron beams, as well as characterise the plasma, two different Z-pinch devices. Computer codes are developed to analyse the energy and time resolved data obtained in this work. These codes model both, X-ray emission from a plasma and X-ray emission due to electron beam bombardment of a metal surface. The hot spot and electron beam parameters are measured, from the time correlated X-ray data using these computer codes. The electron beams and the hot spots are also correlated to the plasma behaviour and to each other. The results from both devices are compared with each other and with the theoretical work on hot spot and electron beam formation. A previously unreported 3-5 keV electron temperature plasma is identified, in the gas puff Z-pinch plasma, prior to the formation of the hot spots. it is shown, therefore, that the hot spots are more dense but not hotter than the surrounding plasma. Two distinct periods of electron beam generation are identified in both devices. (author)

Curvature-driven instabilities in a hot-electron plasma: radial analysis

International Nuclear Information System (INIS)

Berk, H.L.; Van Dam, J.W.; Rosenbluth, M.N.; Spong, D.A.

1981-12-01

The theory of unfavorable curvature-driven instabilities is developed for a plasma interacting with a hot electron ring whose drift frequencies are larger than the growth rates predicted from conventional magnetohydrodynamic theory. A z-pinch model is used to emphasize the radial structure of the problem. Stability criteria are obtained for the five possible modes of instability: the conventional hot electron interchange, a high-frequency hot electron interchange (at frequencies larger than the ion cyclotron frequency), a compressional instability, a background pressure-driven interchange, and an interacting pressure-driven interchange

Heat transfer between adsorbate and laser-heated hot electrons

International Nuclear Information System (INIS)

Ueba, H; Persson, B N J

2008-01-01

Strong short laser pulses can give rise to a strong increase in the electronic temperature at metal surfaces. Energy transfer from the hot electrons to adsorbed molecules may result in adsorbate reactions, e.g. desorption or diffusion. We point out the limitations of an often used equation to describe the heat transfer process in terms of a friction coupling. We propose a simple theory for the energy transfer between the adsorbate and hot electrons using a newly introduced heat transfer coefficient, which depends on the adsorbate temperature. We calculate the transient adsorbate temperature and the reaction yield for a Morse potential as a function of the laser fluency. The results are compared to those obtained using a conventional heat transfer equation with temperature-independent friction. It is found that our equation of energy (heat) transfer gives a significantly lower adsorbate peak temperature, which results in a large modification of the reaction yield. We also consider the heat transfer between different vibrational modes excited by hot electrons. This mode coupling provides indirect heating of the vibrational temperature in addition to the direct heating by hot electrons. The formula of heat transfer through linear mode-mode coupling of two harmonic oscillators is applied to the recent time-resolved study of carbon monoxide and atomic oxygen hopping on an ultrafast laser-heated Pt(111) surface. It is found that the maximum temperature of the frustrated translation mode can reach high temperatures for hopping, even when direct friction coupling to the hot electrons is not strong enough

Hot electron effects on the satellite spectrum of laser-produced plasmas

Energy Technology Data Exchange (ETDEWEB)

Abdallah, J. [Los Alamos National Laboratory, PO Box 1663, Los Alamos, NM (United States); Faenov, A.Y.; Pikuz, T.A. [MISDC, NPO ' VNIIFTRI' , Mendeleevo, Moscow Region, 141570 (Russian Federation); Wilke, M.D.; Kyrala, G.A.; Clark, R.E.H. [Los Alamos National Laboratory, PO Box 1663, Los Alamos, NM (United States)

1999-05-01

In laser-produced plasmas, the interaction of the intense laser light with plasma electrons can produce high-energy superthermal electrons with energies in the keV range. These hot electrons can influence the level populations which determine spectral line structure. In the present paper, the effect of hot electrons on the X-ray satellite spectrum of laser-produced plasmas is studied. Calculated spectra are compared with experimental observations. Magnesium targets irradiated by three different types of laser pulses are considered. These include, a high-intensity 600 fs Nd-glass laser, a 1 ns Nd-glass laser, and a 2ns CO{sub 2} laser. The Nd-glass laser experiments were conducted recently at the Los Alamos Trident Facility and the CO{sub 2} data were recorded by MISDC. High-resolution spectra were measured near the He-like resonance line of magnesium. The calculations employ an electron energy distribution which includes a thermal and a hot electron component, as part of a detailed collisional-radiative model. Plasma parameters including electron temperature, density, and hot electron fraction are estimated by choosing best fits to the experimental measurements. The calculations show that hot electrons can cause several anomalous effects. The Li-like jkl, abcd, and qr satellites can show intensities which are generally attributed to electron densities in excess of 10{sup 23} cm{sup -3}. In addition, the relative amplitude of the intercombination line can be unusually large even at high electron densities due to enhanced collisional excitation of the 1s2p{sup 3}P state by hot electrons. (Copyright (c) 1999 Elsevier Science B.V., Amsterdam. All rights reserved.)

Nonequilibrium statistical operator in hot-electron transport theory

International Nuclear Information System (INIS)

Xing, D.Y.; Liu, M.

1991-09-01

The Nonequilibrium Statistical Operator method developed by Zubarev is generalized and applied to the study of hot-electron transport in semiconductors. The steady-state balance equations for momentum and energy are derived to the lowest order in the electron-lattice coupling. We show that the derived balance equations are exactly the same as those obtained by Lei and Ting. This equivalence stems from the fact that to the linear order in the electron-lattice coupling, two statistical density matrices have identical effect when they are used to calculate the average value of a dynamical operator. The application to the steady-state and transient hot-electron transport in multivalley semiconductors is also discussed. (author). 28 refs, 1 fig

Electron injection in semiconductor drift detectors

International Nuclear Information System (INIS)

Rehak, P.; Gatti, E.; Longoni, A.; Sampietro, M.; Castoldi, A.; Vacchi, A.

1990-01-01

The paper reports the first successful results of a simple MOS structure to inject electrons at a given position in Silicon Drift Detectors. The structure allows on-line calibration of the drift velocity of electrons within the detector. The calibration is a practical method to trace the temperature dependence of the electron mobility. Several of these injection structures can be implemented in silicon drift detectors without additional steps in the fabrication process. 5 refs., 11 figs

Method for reducing heat loss during injection of hot water into an oil stratum

Energy Technology Data Exchange (ETDEWEB)

Evgenev, A E; Kalashnikov, V N; Raiskii, Yu D

1968-07-01

A method is described for reduction of heat loss during the injection of hot water into an oil stratum. During the transportation of the hot water to the face of the bore holes, it has high-molecular polymers added to it. The high-molecular polymer may be guanidine or polyoxyethylene in the quantity of 0.01 to 0.03% by wt.

Uniform and non-uniform inlet temperature of a vertical hot water jet injected into a rectangular tank

KAUST Repository

El-Amin, Mohamed; Sun, Shuyu

2010-01-01

In most of real-world applications, such as the case of heat stores, inlet is not kept at a constant temperature but it may vary with time during charging process. In this paper, a vertical water jet injected into a rectangular storage tank is measured experimentally and simulated numerically. Two cases of study are considered; one is a hot water jet with uniform inlet temperature (UIT) injected into a cold water tank, and the other is a cold water jet with non-uniform inlet temperature (NUIT) injected into a hot water tank. Three different temperature differences and three different flow rates are studied for the hot water jet with UIT which is injected into a cold water tank. Also, three different initial temperatures with constant flow rate as well as three different flow rates with constant initial temperature are considered for the cold jet with NUIT which is injected into a hot water tank. Turbulence intensity at the inlet as well as Reynolds number for the NUIT cases are therefore functions of inlet temperature and time. Both experimental measurements and numerical calculations are carried out for the same measured flow and thermal conditions. The realizable k-ε model is used for modeling the turbulent flow. Numerical solutions are obtained for unsteady flow while pressure, velocity, temperature and turbulence distributions inside the water tank are analyzed. The simulated results are compared to the measured results, and they show a good agreement at low temperatures. © 2010 IEEE.

Uniform and non-uniform inlet temperature of a vertical hot water jet injected into a rectangular tank

KAUST Repository

El-Amin, Mohamed

2010-12-01

In most of real-world applications, such as the case of heat stores, inlet is not kept at a constant temperature but it may vary with time during charging process. In this paper, a vertical water jet injected into a rectangular storage tank is measured experimentally and simulated numerically. Two cases of study are considered; one is a hot water jet with uniform inlet temperature (UIT) injected into a cold water tank, and the other is a cold water jet with non-uniform inlet temperature (NUIT) injected into a hot water tank. Three different temperature differences and three different flow rates are studied for the hot water jet with UIT which is injected into a cold water tank. Also, three different initial temperatures with constant flow rate as well as three different flow rates with constant initial temperature are considered for the cold jet with NUIT which is injected into a hot water tank. Turbulence intensity at the inlet as well as Reynolds number for the NUIT cases are therefore functions of inlet temperature and time. Both experimental measurements and numerical calculations are carried out for the same measured flow and thermal conditions. The realizable k-ε model is used for modeling the turbulent flow. Numerical solutions are obtained for unsteady flow while pressure, velocity, temperature and turbulence distributions inside the water tank are analyzed. The simulated results are compared to the measured results, and they show a good agreement at low temperatures. © 2010 IEEE.

Conceptual design and simulation investigation of an electronic cooling device powered by hot electrons

International Nuclear Information System (INIS)

Su, Guozhen; Zhang, Yanchao; Cai, Ling; Su, Shanhe; Chen, Jincan

2015-01-01

Most electronic cooling devices are powered by an external bias applied between the cold and the hot reservoirs. Here we propose a new concept of electronic cooling, in which cooling is achieved by using a reservoir of hot electrons as the power source. The cooling device incorporates two energy filters with the Lorentzian transmission function to respectively select low- and high-energy electrons for transport. Based on the proposed model, we analyze the performances of the device varying with the resonant levels and half widths of two energy filters and establish the optimal configuration of the cooling device. It is believed that such a novel device may be practically used in some nano-energy fields. - Highlights: • A new electronic cooling device powered by hot electrons is proposed. • Two energy filters are employed to select the electrons for transport. • The effects of the resonant levels and half widths of two filters are discussed. • The maximum cooling power and coefficient of performance are calculated. • The optimal configuration of the cooling device is determined.

Two-dimensional non-volatile programmable p-n junctions

Science.gov (United States)

Li, Dong; Chen, Mingyuan; Sun, Zhengzong; Yu, Peng; Liu, Zheng; Ajayan, Pulickel M.; Zhang, Zengxing

2017-09-01

Semiconductor p-n junctions are the elementary building blocks of most electronic and optoelectronic devices. The need for their miniaturization has fuelled the rapid growth of interest in two-dimensional (2D) materials. However, the performance of a p-n junction considerably degrades as its thickness approaches a few nanometres and traditional technologies, such as doping and implantation, become invalid at the nanoscale. Here we report stable non-volatile programmable p-n junctions fabricated from the vertically stacked all-2D semiconductor/insulator/metal layers (WSe2/hexagonal boron nitride/graphene) in a semifloating gate field-effect transistor configuration. The junction exhibits a good rectifying behaviour with a rectification ratio of 104 and photovoltaic properties with a power conversion efficiency up to 4.1% under a 6.8 nW light. Based on the non-volatile programmable properties controlled by gate voltages, the 2D p-n junctions have been exploited for various electronic and optoelectronic applications, such as memories, photovoltaics, logic rectifiers and logic optoelectronic circuits.

Superconducting hot-electron bolometer: from the discovery of hot-electron phenomena to practical applications

International Nuclear Information System (INIS)

Shurakov, A; Lobanov, Y; Goltsman, G

2016-01-01

The discovery of hot-electron phenomena in a thin superconducting film in the last century was followed by numerous experimental studies of its appearance in different materials aiming for a better understanding of the phenomena and consequent implementation of terahertz detection systems for practical applications. In contrast to the competitors such as superconductor-insulator-superconductor tunnel junctions and Schottky diodes, the hot electron bolometer (HEB) did not demonstrate any frequency limitation of the detection mechanism. The latter, in conjunction with a decent performance, rapidly made the HEB mixer the most attractive candidate for heterodyne observations at frequencies above 1 THz. The successful operation of practical instruments (the Heinrich Hertz Telescope, the Receiver Lab Telescope, APEX, SOFIA, Hershel) ensures the importance of the HEB technology despite the lack of rigorous theoretical routine for predicting the performance. In this review, we provide a summary of experimental and theoretical studies devoted to understanding the HEB physics, and an overview of various fabrication routes and materials. (topical review)

Hot-electron surface retention in intense short-pulse laser-matter interactions.

Science.gov (United States)

Mason, R J; Dodd, E S; Albright, B J

2005-07-01

Implicit hybrid plasma simulations predict that a significant fraction of the energy deposited into hot electrons can be retained near the surface of targets with steep density gradients illuminated by intense short-pulse lasers. This retention derives from the lateral transport of heated electrons randomly emitted in the presence of spontaneous magnetic fields arising near the laser spot, from geometric effects associated with a small hot-electron source, and from E fields arising in reaction to the ponderomotive force. Below the laser spot hot electrons are axially focused into a target by the B fields, and can filament in moderate Z targets by resistive Weibel-like instability, if the effective background electron temperature remains sufficiently low. Carefully engineered use of such retention in conjunction with ponderomotive density profile steepening could result in a reduced hot-electron range that aids fast ignition. Alternatively, such retention may disturb a deeper deposition needed for efficient radiography and backside fast ion generation.

Bioorganic nanodots for non-volatile memory devices

International Nuclear Information System (INIS)

Amdursky, Nadav; Shalev, Gil; Handelman, Amir; Natan, Amir; Rosenwaks, Yossi; Litsyn, Simon; Szwarcman, Daniel; Rosenman, Gil; Roizin, Yakov

2013-01-01

In recent years we are witnessing an intensive integration of bio-organic nanomaterials in electronic devices. Here we show that the diphenylalanine bio-molecule can self-assemble into tiny peptide nanodots (PNDs) of ∼2 nm size, and can be embedded into metal-oxide-semiconductor devices as charge storage nanounits in non-volatile memory. For that purpose, we first directly observe the crystallinity of a single PND by electron microscopy. We use these nanocrystalline PNDs units for the formation of a dense monolayer on SiO 2 surface, and study the electron/hole trapping mechanisms and charge retention ability of the monolayer, followed by fabrication of PND-based memory cell device

Resonant plasmonic terahertz detection in vertical graphene-base hot-electron transistors

Energy Technology Data Exchange (ETDEWEB)

Ryzhii, V. [Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577 (Japan); Center for Photonics and Infrared Engineering, Bauman Moscow State Technical University and Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow 111005 (Russian Federation); Otsuji, T. [Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577 (Japan); Ryzhii, M. [Department of Computer Science and Engineering, University of Aizu, Aizu-Wakamatsu 965-8580 (Japan); Mitin, V. [Department of Electrical Engineering, University at Buffalo, SUNY, Buffalo, New York 1460-1920 (United States); Shur, M. S. [Department of Electrical, Computer, and System Engineering and Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

2015-11-28

We analyze dynamic properties of vertical graphene-base hot-electron transistors (GB-HETs) and consider their operation as detectors of terahertz (THz) radiation using the developed device model. The GB-HET model accounts for the tunneling electron injection from the emitter, electron propagation across the barrier layers with the partial capture into the GB, and the self-consistent oscillations of the electric potential and the hole density in the GB (plasma oscillations), as well as the quantum capacitance and the electron transit-time effects. Using the proposed device model, we calculate the responsivity of GB-HETs operating as THz detectors as a function of the signal frequency, applied bias voltages, and the structural parameters. The inclusion of the plasmonic effect leads to the possibility of the GB-HET operation at the frequencies significantly exceeding those limited by the characteristic RC-time. It is found that the responsivity of GB-HETs with a sufficiently perfect GB exhibits sharp resonant maxima in the THz range of frequencies associated with the excitation of plasma oscillations. The positions of these maxima are controlled by the applied bias voltages. The GB-HETs can compete with and even surpass other plasmonic THz detectors.

Hot electron formation in thermal barrier region of tandem mirror GAMMA 10

International Nuclear Information System (INIS)

Katanuma, I.; Kiwamoto, Y.; Sawada, K.; Miyoshi, S.

1987-01-01

We have studied the hot electron build-up by the second harmonic electron cyclotron resonance heating in the thermal barrier region of tandem mirror GAMMA 10 by using a Fokker-Planck code with self-consistent potential profile taken into account. We have found two phases in the evolution of hot electron population and the potential profile. In the first phase where the RF diffusion is dominant quick increase of the hot electron density and that of the mean energy are observed. No further increase in the mean energy is observed thereafter. The potential is the deepest during the first phase. The second phase starts in the mean-free-time of the pitch angle scattering of hot electrons on cold electrons and ions. In this phase the hot electron population increases in the rate of the pitch angle scattering. The potential dip shallows due to the accumulation of pitch angle scattered passing ions. This observation indicates the necessity of the ion pumping for maintaining the negative potential at the thermal barrier. (author)

Effects of magnetic configuration on hot electrons in highly charged ECR plasma

International Nuclear Information System (INIS)

Zhao, H Y; Zhao, H W; Sun, L T; Wang, H; Ma, B H; Zhang, X Zh; Li, X X; Ma, X W; Zhu, Y H; Lu, W; Shang, Y; Xie, D Z

2009-01-01

To investigate the hot electrons in highly charged electron cyclotron resonance (ECR) plasma, Bremsstrahlung radiations were measured on two ECR ion sources at the Institute of Modern Physics. Used as a comparative index of the mean energy of the hot electrons, a spectral temperature, T spe , is derived through a linear fitting of the spectra in a semi-logarithmic representation. The influences of the external source parameters, especially the magnetic configuration, on the hot electrons are studied systematically. This study has experimentally demonstrated the importance of high microwave frequency and high magnetic field in the electron resonance heating to produce a high density of hot electrons, which is consistent with the empirical ECR scaling laws. The experimental results have again shown that a good compromise is needed between the ion extraction and the plasma confinement for an efficient production of highly charged ion beams. In addition, this investigation has shown that the correlation between the mean energy of the hot electrons and the magnetic field gradient at the ECR is well in agreement with the theoretical models.

The optimization of production and control of hot-electron plasmas

International Nuclear Information System (INIS)

1989-01-01

The present project was initially undertaken to develop a number of innovative concepts for using electron cyclotron heating (ECH) to enhance tokamak performance. A common feature of the various applications under consideration is efficient, spatially-localized generation of hot-electron plasmas; and the first phase of the work addressed the basic aspects of an approach to achieving this Upper Off-Resonant Heating (UORH) and open-resonator couplers to confine the weakly damped microwave power to the particular region where the hot electrons are to be generated. The results of the first year's work provided strong evidence that hot-electron plasmas with electron energies of hundreds of keV could be generated using multiple-frequency ECH and fully-toroidal open-resonator couplers. The evidence was sufficiently compelling to suggest that the project be focused on a suitable near-term application to the TEXT device

Injection into the LNLS UVX electron storage ring

International Nuclear Information System (INIS)

Lin, Liu

1991-01-01

To inject the 1.15 GeV electron storage ring - UVX - a beam from a linear accelerator - MAIRA - is used. The electrons are injected and accumulated at low energy (100MeV) until the nominal current of 100 mA is reached and than are ramped to the nominal energy. A study on a conventional injection scheme has been carried out. Two injection modes are investigated: injection with the phase ellipse parameters matched and mismatched to the ring's acceptance. The mismatched mode is optimized to fit the maximum of the injected beam into the acceptance

Electron self-injection in the donut bubble wakefield

Science.gov (United States)

Firouzjaei, Ali Shekari; Shokri, Babak

2018-05-01

We investigate electron self-injection in a donut bubble wakefield driven by a Laguerre-Gauss laser pulse. The present work discusses the electron capture by modeling the analytical donut bubble field. We discuss the self-injection of the electrons from plasma for various initial conditions and then compare the results. We show that the donut bubble can trap plasma electrons forming a hollow beam. We present the phase spaces and longitudinal momentum evolution for the trapped electrons in the bubble and discuss their characteristic behaviors and stability. It will be shown that the electrons self-injected in the front are ideal for applications in which a good stability and low energy spread are essential.

Overview of emerging nonvolatile memory technologies.

Science.gov (United States)

Meena, Jagan Singh; Sze, Simon Min; Chand, Umesh; Tseng, Tseung-Yuen

2014-01-01

Nonvolatile memory technologies in Si-based electronics date back to the 1990s. Ferroelectric field-effect transistor (FeFET) was one of the most promising devices replacing the conventional Flash memory facing physical scaling limitations at those times. A variant of charge storage memory referred to as Flash memory is widely used in consumer electronic products such as cell phones and music players while NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. Emerging memory technologies promise new memories to store more data at less cost than the expensive-to-build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. They are being investigated and lead to the future as potential alternatives to existing memories in future computing systems. Emerging nonvolatile memory technologies such as magnetic random-access memory (MRAM), spin-transfer torque random-access memory (STT-RAM), ferroelectric random-access memory (FeRAM), phase-change memory (PCM), and resistive random-access memory (RRAM) combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the nonvolatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional (3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years. Subsequently, not an exaggeration to say that computer memory could soon earn the ultimate commercial validation for commercial scale-up and production the cheap plastic knockoff. Therefore, this review is devoted to the rapidly developing new

Overview of emerging nonvolatile memory technologies

Science.gov (United States)

2014-01-01

Nonvolatile memory technologies in Si-based electronics date back to the 1990s. Ferroelectric field-effect transistor (FeFET) was one of the most promising devices replacing the conventional Flash memory facing physical scaling limitations at those times. A variant of charge storage memory referred to as Flash memory is widely used in consumer electronic products such as cell phones and music players while NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. Emerging memory technologies promise new memories to store more data at less cost than the expensive-to-build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. They are being investigated and lead to the future as potential alternatives to existing memories in future computing systems. Emerging nonvolatile memory technologies such as magnetic random-access memory (MRAM), spin-transfer torque random-access memory (STT-RAM), ferroelectric random-access memory (FeRAM), phase-change memory (PCM), and resistive random-access memory (RRAM) combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the nonvolatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional (3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years. Subsequently, not an exaggeration to say that computer memory could soon earn the ultimate commercial validation for commercial scale-up and production the cheap plastic knockoff. Therefore, this review is devoted to the rapidly developing new

Spin dependent transport of hot electrons through ultrathin epitaxial metallic films

Energy Technology Data Exchange (ETDEWEB)

Heindl, Emanuel

2010-06-23

In this work relaxation and transport of hot electrons in thin single crystalline metallic films is investigated by Ballistic Electron Emission Microscopy. The electron mean free paths are determined in an energy interval of 1 to 2 eV above the Fermi level. While fcc Au-films appear to be quite transmissive for hot electrons, the scattering lengths are much shorter for the ferromagnetic alloy FeCo revealing, furthermore, a strong spin asymmetry in hot electron transport. Additional information is gained from temperature dependent studies in combination with golden rule approaches in order to disentangle the impact of several relaxation and transport properties. It is found that bcc Fe-films are much less effective in spin filtering than films made of the FeCo-alloy. (orig.)

EDITORIAL: Non-volatile memory based on nanostructures Non-volatile memory based on nanostructures

Science.gov (United States)

Kalinin, Sergei; Yang, J. Joshua; Demming, Anna

2011-06-01

that limiting the current during electroforming leads to the coexistence of two resistance switching modes in TiO2 memristive devices [2]. They also present spectromicroscopic observations and modelling results for the Joule heating during switching, providing insights into the ON/OFF switching process [3]. Researchers in Korea have examined in detail the mechanism of electronic bipolar resistance switching in the Pt/TiO2/Pt structure and show that degradation in switching performance of this system can be explained by the modified distribution of trap densities [4]. The issue also includes studies of TiO2 that demonstrate analog memory, synaptic plasticity, and spike-timing-dependent plasticity functions, work that contributes to the development of neuromorphic devices that have high efficiency and low power consumption [5]. In addition to enabling a wide range of data storage and logic applications, electroresistive non-volatile memories invite us to re-evaluate the long-held paradigms in the condensed matter physics of oxides. In the past three years, much attention has been attracted to polarization-mediated electronic transport [6, 7] and domain wall conduction [8] as the key to the next generation of electronic and spintronic devices based on ferroelectric tunnelling barriers. Typically local probe experiments are performed on an ambient scanning probe microscope platform under conditions of high voltage stresses, conditions highly conducive to electrochemical reactions. Recent experiments [9-13] suggest that ionic motion can heavily contribute to the measured responses and compete with purely physical mechanisms. Electrochemical effects can also be expected in non-ferroelectric materials such as manganites and cobaltites, as well as for thick ferroelectrics under high-field conditions, as in capacitors and tunnelling junctions where the ionic motion could be a major contributor to electric field-induced strain. Such strain, in turn, can affect the effective

Pseudorandom binary injection of levitons for electron quantum optics

Science.gov (United States)

Glattli, D. C.; Roulleau, P.

2018-03-01

The recent realization of single-electron sources lets us envision performing electron quantum optics experiments, where electrons can be viewed as flying qubits propagating in a ballistic conductor. To date, all electron sources operate in a periodic electron injection mode, leading to energy spectrum singularities in various physical observables which sometimes hide the bare nature of physical effects. To go beyond this, we propose a spread-spectrum approach where electron flying qubits are injected in a nonperiodic manner following a pseudorandom binary bit pattern. Extending the Floquet scattering theory approach from periodic to spread-spectrum drive, the shot noise of pseudorandom binary sequences of single-electron injection can be calculated for leviton and nonleviton sources. Our new approach allows us to disentangle the physics of the manipulated excitations from that of the injection protocol. In particular, the spread-spectrum approach is shown to provide better knowledge of electronic Hong-Ou-Mandel correlations and to clarify the nature of the pulse train coherence and the role of the dynamical orthogonality catastrophe for noninteger charge injection.

Bioorganic nanodots for non-volatile memory devices

Energy Technology Data Exchange (ETDEWEB)

Amdursky, Nadav; Shalev, Gil; Handelman, Amir; Natan, Amir; Rosenwaks, Yossi [School of Electrical Engineering, Iby and Aladar Fleischman Faculty of Engineering, Tel Aviv University, Tel Aviv 69978 (Israel); Litsyn, Simon; Szwarcman, Daniel; Rosenman, Gil, E-mail: rgil@post.tau.ac.il [School of Electrical Engineering, Iby and Aladar Fleischman Faculty of Engineering, Tel Aviv University, Tel Aviv 69978 (Israel); StoreDot LTD, 16 Menahem Begin St., Ramat Gan (Israel); Roizin, Yakov [School of Electrical Engineering, Iby and Aladar Fleischman Faculty of Engineering, Tel Aviv University, Tel Aviv 69978 (Israel); TowerJazz, P.O. Box 619, Migdal HaEmek 23105 (Israel)

2013-12-01

In recent years we are witnessing an intensive integration of bio-organic nanomaterials in electronic devices. Here we show that the diphenylalanine bio-molecule can self-assemble into tiny peptide nanodots (PNDs) of ∼2 nm size, and can be embedded into metal-oxide-semiconductor devices as charge storage nanounits in non-volatile memory. For that purpose, we first directly observe the crystallinity of a single PND by electron microscopy. We use these nanocrystalline PNDs units for the formation of a dense monolayer on SiO{sub 2} surface, and study the electron/hole trapping mechanisms and charge retention ability of the monolayer, followed by fabrication of PND-based memory cell device.

Stimulated Raman scattering and hot-electron production

International Nuclear Information System (INIS)

Drake, R.P.; Turner, R.E.; Lasinski, B.F.; Estabrook, K.G.; Campbell, E.M.; Wang, C.L.; Phillion, D.W.; Williams, E.A.; Kruer, W.L.

1985-01-01

High-intensity laser light can excite parametric instabilities that scatter or absorb it. One instability that can arise when laser light penetrates a plasma is sub-quarter-critical stimulated Raman (SQSR) scattering. It occurs below the quarter-critical density of the incident light and involves the decay of the incident light wave into a scattered light wave and electron plasma wave. The scattered-light wavelength ranges from 1 to 2 times that of the incident light, depending on the plasma density and temperature. This article reports studies of SQSR scattering and hot-electron production in plasmas produced by irradiating thick gold targets with up to 4 kJ of 0.53-μm light in 1-ns (FWHM) pulses. These studies have important implications for laser fusion. Hot electrons attributed to the SQSR instability can increase the difficulty of achieving high-gain implosions by penetrating and preheating the fusion fuel

Electrically excited hot-electron dominated fluorescent emitters using individual Ga-doped ZnO microwires via metal quasiparticle film decoration.

Science.gov (United States)

Liu, Yang; Jiang, Mingming; Zhang, Zhenzhong; Li, Binghui; Zhao, Haifeng; Shan, Chongxin; Shen, Dezhen

2018-03-28

The generation of hot electrons from metal nanostructures through plasmon decay provided a direct interfacial charge transfer mechanism, which no longer suffers from the barrier height restrictions observed for metal/semiconductor interfaces. Metal plasmon-mediated energy conversion with higher efficiency has been proposed as a promising alternative to construct novel optoelectronic devices, such as photodetectors, photovoltaic and photocatalytic devices, etc. However, the realization of the electrically-driven generation of hot electrons, and the application in light-emitting devices remain big challenges. Here, hybrid architectures comprising individual Ga-doped ZnO (ZnO:Ga) microwires via metal quasiparticle film decoration were fabricated. The hottest spots could be formed towards the center of the wires, and the quasiparticle films were converted into physically isolated nanoparticles by applying a bias onto the wires. Thus, the hot electrons became spatially localized towards the hottest regions, leading to a release of energy in the form of emitting photons. By adjusting the sputtering times and appropriate alloys, such as Au and Ag, wavelength-tunable emissions could be achieved. To exploit the EL emission characteristics, metal plasmons could be used as active elements to mediate the generation of hot electrons from metal nanostructures, which are located in the light-emitting regions, followed by injection into ZnO:Ga microwire-channels; thus, the production of plasmon decay-induced hot-electrons could function as an efficient approach to dominate emission wavelengths. Therefore, by introducing metal nanostructure decoration, individual ZnO:Ga microwires can be used to construct wavelength-tunable fluorescent emitters. The hybrid architectures of metal-ZnO micro/nanostructures offer a fantastic candidate to broaden the potential applications of semiconducting optoelectronic devices, such as photovoltaic devices, photodetectors, optoelectronic sensors, etc.

Characteristics of hot electron ring in a simple magnetic mirror field

International Nuclear Information System (INIS)

Hosokawa, M.; Ikegami, H.

1980-12-01

Characteristics of hot electron ring are studied in a simple magnetic mirror machine (mirror ratio 2 : 1) with a diameter of 30 cm at the midplane and with the distance of 80 cm between the mirrors. Maximum microwave input power is 5 kW at 6.4 GHz with the corresponding power density of approximately 0.3 W/cm 3 . With a background cold plasma of 4 x 10 11 cm -3 , hot electron rings are most effectively generated in two cases when the magnetic field on the axis of the midplane is set near the fundamental or the second harmonic electron cyclotron resonance to the applied microwave frequency. Density profile of the hot electrons is observed to take a so-called ring shape with a radius controllable by the magnetic field intensity and with an axial length of approximately 10 cm. The radial cut view of the ring, however, indicates an M shape density profile, and the density of the hot electrons on the axis is about one half of the density at the ring. Approximately 30 msec is needed before generating the hot electron ring at the density of 10 10 cm -3 with an average kinetic energy of 100 keV. The ultimate energy distribution function is observed to have a stepwise cut in the high energy tail and no energetic components above 1 MeV are detected. The hot electron ring is susceptible to a few instabilities which can be artificially triggered. One of the instabilities is observed to associate with a loss of lower energetic electrons and microwave bursts. At the instability, the ring shape is observed to transform into a filled cylinder in a few microseconds and disappear. (author)

Injection into electron plasma traps

International Nuclear Information System (INIS)

Gorgadze, Vladimir; Pasquini, Thomas A.; Fajans, Joel; Wurtele, Jonathan S.

2003-01-01

Computational studies and experimental measurements of plasma injection into a Malmberg-Penning trap reveal that the number of trapped particles can be an order of magnitude higher than predicted by a simple estimates based on a ballistic trapping model. Enhanced trapping is associated with a rich nonlinear dynamics generated by the space-charge forces of the evolving trapped electron density. A particle-in-cell simulation is used to identify the physical mechanisms that lead to the increase in trapped electrons. The simulations initially show strong two-stream interactions between the electrons emitted from the cathode and those reflected off the end plug of the trap. This is followed by virtual cathode oscillations near the injection region. As electrons are trapped, the initially hollow longitudinal phase-space is filled, and the transverse radial density profile evolves so that the plasma potential matches that of the cathode. Simple theoretical arguments are given that describe the different dynamical regimes. Good agreement is found between simulation and theory

Phase change materials in non-volatile storage

OpenAIRE

Ielmini, Daniele; Lacaita, Andrea L.

2011-01-01

After revolutionizing the technology of optical data storage, phase change materials are being adopted in non-volatile semiconductor memories. Their success in electronic storage is mostly due to the unique properties of the amorphous state where carrier transport phenomena and thermally-induced phase change cooperate to enable high-speed, low-voltage operation and stable data retention possible within the same material. This paper reviews the key physical properties that make this phase so s...

Acceleration of laser-injected electron beams in an electron-beam driven plasma wakefield accelerator

International Nuclear Information System (INIS)

Knetsch, Alexander

2018-03-01

Plasma wakefields deliver accelerating fields that are approximately a 100 times higher than those in conventional radiofrequency or even superconducting radiofrequency cavities. This opens a transformative path towards novel, compact and potentially ubiquitous accelerators. These prospects, and the increasing demand for electron accelerator beamtime for various applications in natural, material and life sciences, motivate the research and development on novel plasma-based accelerator concepts. However, these electron beam sources need to be understood and controlled. The focus of this thesis is on electron beam-driven plasma wakefield acceleration (PWFA) and the controlled injection and acceleration of secondary electron bunches in the accelerating wake fields by means of a short-pulse near-infrared laser. Two laser-triggered injection methods are explored. The first one is the Trojan Horse Injection, which relies on very good alignment and timing control between electron beam and laser pulse and then promises electron bunches with hitherto unprecedented quality as regards emittance and brightness. The physics of electron injection in the Trojan Horse case is explored with a focus on the final longitudinal bunch length. Then a theoretical and numerical study is presented that examines the physics of Trojan Horse injection when performed in an expanding wake generated by a smooth density down-ramp. The benefits are radically decreased drive-electron bunch requirements and a unique bunch-length control that enables longitudinal electron-bunch shaping. The second laser-triggered injection method is the Plasma Torch Injection, which is a versatile, all-optical laser-plasma-based method capable to realize tunable density downramp injection. At the SLAC National Laboratory, the first proof-of-principle was achieved both for Trojan Horse and Plasma Torch injection. Setup details and results are reported in the experimental part of the thesis along with the commissioning

Zinc injection during Hot Functional Test (HFT) in Tomari Unit 3

International Nuclear Information System (INIS)

Hayakawa, H.; Mino, Y.; Nakahama, S.; Aizawa, Y.; Nishimura, T.; Umehara, R.; Shimuz, Y.; Kogawa, N.; Ojima, Z.

2010-01-01

Zinc injection is performed to reduce radiation exposure around the world, and its effect is confirmed. In Japanese PWRs, the actual effect is also confirmed. Therefore, number of Japanese PWR plans, where zinc is injected, increase. We conclude that zinc injection from Hot Function Test (HFT), when RCS temperature and corrosion rate of material of primary components are increased firstly, is more effective for reducing radiation exposure, because oxide layer with zinc is more stable than with other metals such as cobalt and it is confirmed that zinc injection reduces corrosion amount of alloy 690TT in laboratory test. Therefore in Tomari Unit 3 (PWR, commercial operation from December 2009) of HOKKAIDO ELECTRIC POWER CO., INC, zinc injection was started from first Heat-up during trial operation. During HFT, zinc consumption coincides with assumed plan and Ni concentration is lower than in reference plant. Therefore we conclude that stable and fine oxide layer including zinc is formed. We hope that radiation exposure reduces because of these results. (We published at Asia Water Chemistry Symposium 2009 in NAGOYA.) Results of analysis of oxide layer on SG insert plate, removed after HFT, will be reported. Also Actual results of water chemistry and zinc injection after HFT will be reported. (author)

Anisotropy effects on curvature-driven flute instabilities in a hot-electron plasma

International Nuclear Information System (INIS)

Spong, D.A.; Berk, H.L.; Van Dam, J.W.; Rosenbluth, M.N.

1982-08-01

The effects of finite parallel temperature are investigated for a hot electron plasma with sufficiently large beta that the magnetic field scale length (Δ/sub B/) is small compared with the vacuum field radius of curvature (R). Numerical and analytical estimates of stability boundaries are obtained for the four possible modes that can be treated in this limit: the conventional hot electron interchange, the high frequency hot electron interchange (ω > ω/sub ci/), the compressional Alfven mode, and the interacting pressure-driven interchange

Hot-electron plasma formation and confinement in the Tandem Mirror Experiment-Upgrade

International Nuclear Information System (INIS)

Ress, D.B.

1988-01-01

Electron-cyclotron range-of-frequency heating (ECRH) at 28 GHz is used to create a population of mirror-confined hot electrons in the Tandem Mirror Experiment-Upgrade (TMX-U). Generation of a large fraction of such electrons within each end-cell of TMX-U is essential to the formation of the desired electrostatic potential profile of the thermal-barrier tandem mirror. The formation and confinement of the ECRH-generated hot-electron plasma was investigated with a variety of diagnostic instruments, including a novel instrumented limiter probe. The author characterized the spatial structure of the hot-electron plasma. Details of the heating process cause the plasma to separate into two regions: a halo, consisting entirely of energetic electrons, and a core, which is dominated by cooler electrons. The plasma structure forms rapidly under the action of second-harmonic ECRH. Fundamental ECRH, which is typically applied simultaneously, is only weakly absorbed and generally does not create energetic electrons. The ECRH-generated plasma displays several loss mechanisms. Hot electrons in the halo region, with T e ∼ 30 keV, are formed by localized ECRH near the plasma boundary, and are lost through a radial process involving open magnetic-curvature-drift surfaces

Hot deformation behavior and hot working characteristic of Nickel-base electron beam weldments

International Nuclear Information System (INIS)

Ning, Yongquan; Yao, Zekun; Guo, Hongzhen; Fu, M.W.

2014-01-01

Highlights: • The Hot deformation behavior of electron beam (EB) Nickel-base weldments was investigated. • The constitutive equation represented by temperature, strain rate and true strain was developed. • Processing map approach was adopted to optimize the hot forging process of EB weldments. • True strain has a great effect on the efficiency of power dissipation (η). -- Abstract: The electron beam welding (EBW) of Nickel-base superalloys was conducted, and the cylindrical compression specimens were machined from the central part of the electron beam (EB) weldments. The hot deformation behavior of EB weldments was investigated at the temperature of 960–1140 °C and the strain rate of 0.001–1.0 s −1 . The apparent activation energy of deformation was calculated to be 400 kJ/mol, and the constitutive equation that describes the flow stress as a function of strain rate and deformation temperature was proposed for modeling of the hot deformation process of EB weldments. The processing map approach was adopted to investigate the deformation mechanisms during the hot plastic deformation and to optimize the processing parameters of EB weldments. It is found that the true strain has a significant effect on the efficiency of power dissipation (η). The η value in the safe processing domain (1140 °C, 1.0 s −1 ) increases from 0.32 to 0.55. In the unsafe processing domain (1080 °C, 0.001 s −1 ), however, the η value greatly decreases with the increase of strain. When the strain is 0.40, the efficiency of power dissipation becomes negative. The flow instability is predicted to occur since the instability parameter ξ(ε) becomes negative. The hot deformation of EB weldments can be carried out safely in the domain with the strain rate range of 0.1–1.0 s −1 and the temperature range of 960–1140 °C. When the height reduction is about 50%, the optimum processing condition is (T opi : 1140 °C, ε opi : 1.0 s −1 ) with the peak efficiency of 0

Hot deformation behavior and hot working characteristic of Nickel-base electron beam weldments

Energy Technology Data Exchange (ETDEWEB)

Ning, Yongquan, E-mail: ningke521@163.com [School of Materials Science and Engineering, Northwestern Polytechnical University, Xi’an 710072 (China); Yao, Zekun; Guo, Hongzhen [School of Materials Science and Engineering, Northwestern Polytechnical University, Xi’an 710072 (China); Fu, M.W. [Department of Mechanical Engineering, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong (China)

2014-01-25

Highlights: • The Hot deformation behavior of electron beam (EB) Nickel-base weldments was investigated. • The constitutive equation represented by temperature, strain rate and true strain was developed. • Processing map approach was adopted to optimize the hot forging process of EB weldments. • True strain has a great effect on the efficiency of power dissipation (η). -- Abstract: The electron beam welding (EBW) of Nickel-base superalloys was conducted, and the cylindrical compression specimens were machined from the central part of the electron beam (EB) weldments. The hot deformation behavior of EB weldments was investigated at the temperature of 960–1140 °C and the strain rate of 0.001–1.0 s{sup −1}. The apparent activation energy of deformation was calculated to be 400 kJ/mol, and the constitutive equation that describes the flow stress as a function of strain rate and deformation temperature was proposed for modeling of the hot deformation process of EB weldments. The processing map approach was adopted to investigate the deformation mechanisms during the hot plastic deformation and to optimize the processing parameters of EB weldments. It is found that the true strain has a significant effect on the efficiency of power dissipation (η). The η value in the safe processing domain (1140 °C, 1.0 s{sup −1}) increases from 0.32 to 0.55. In the unsafe processing domain (1080 °C, 0.001 s{sup −1}), however, the η value greatly decreases with the increase of strain. When the strain is 0.40, the efficiency of power dissipation becomes negative. The flow instability is predicted to occur since the instability parameter ξ(ε) becomes negative. The hot deformation of EB weldments can be carried out safely in the domain with the strain rate range of 0.1–1.0 s{sup −1} and the temperature range of 960–1140 °C. When the height reduction is about 50%, the optimum processing condition is (T{sub opi}: 1140 °C, ε{sub opi}: 1.0 s{sup −1}) with

Equivalent circuit-level model of quantum cascade lasers with integrated hot-electron and hot-phonon effects

Science.gov (United States)

Yousefvand, H. R.

2017-12-01

We report a study of the effects of hot-electron and hot-phonon dynamics on the output characteristics of quantum cascade lasers (QCLs) using an equivalent circuit-level model. The model is developed from the energy balance equation to adopt the electron temperature in the active region levels, the heat transfer equation to include the lattice temperature, the nonequilibrium phonon rate to account for the hot phonon dynamics and simplified two-level rate equations to incorporate the carrier and photon dynamics in the active region. This technique simplifies the description of the electron-phonon interaction in QCLs far from the equilibrium condition. Using the presented model, the steady and transient responses of the QCLs for a wide range of sink temperatures (80 to 320 K) are investigated and analysed. The model enables us to explain the operating characteristics found in QCLs. This predictive model is expected to be applicable to all QCL material systems operating in pulsed and cw regimes.

Electron injection dynamics in high-potential porphyrin photoanodes.

Science.gov (United States)

Milot, Rebecca L; Schmuttenmaer, Charles A

2015-05-19

There is a growing need to utilize carbon neutral energy sources, and it is well known that solar energy can easily satisfy all of humanity's requirements. In order to make solar energy a viable alternative to fossil fuels, the problem of intermittency must be solved. Batteries and supercapacitors are an area of active research, but they currently have relatively low energy-to-mass storage capacity. An alternative and very promising possibility is to store energy in chemical bonds, or make a solar fuel. The process of making solar fuel is not new, since photosynthesis has been occurring on earth for about 3 billion years. In order to produce any fuel, protons and electrons must be harvested from a species in its oxidized form. Photosynthesis uses the only viable source of electrons and protons on the scale needed for global energy demands: water. Because artificial photosynthesis is a lofty goal, water oxidation, which is a crucial step in the process, has been the initial focus. This Account provides an overview of how terahertz spectroscopy is used to study electron injection, highlights trends from previously published reports, and concludes with a future outlook. It begins by exploring similarities and differences between dye-sensitized solar cells (DSSCs) for producing electricity and a putative device for splitting water and producing a solar fuel. It then identifies two important problems encountered when adapting DSSC technology to water oxidation-improper energy matching between sensitizer energy levels with the potential for water oxidation and the instability of common anchoring groups in water-and discusses steps to address them. Emphasis is placed on electron injection from sensitizers to metal oxides because this process is the initial step in charge transport. Both the rate and efficiency of electron injection are analyzed on a sub-picosecond time scale using time-resolved terahertz spectroscopy (TRTS). Bio-inspired pentafluorophenyl porphyrins are

Size dependence investigations of hot electron cooling dynamics in metal/adsorbates nanoparticles

International Nuclear Information System (INIS)

Bauer, Christophe; Abid, Jean-Pierre; Girault, Hubert H.

2005-01-01

The size dependence of electron-phonon coupling rate has been investigated by femtosecond transient absorption spectroscopy for gold nanoparticles (NPs) wrapped in a shell of sulfate with diameter varying from 1.7 to 9.2 nm. Broad-band spectroscopy gives an overview of the complex dynamics of nonequilibrium electrons and permits the choice of an appropriate probe wavelength for studying the electron-phonon coupling dynamics. Ultrafast experiments were performed in the weak perturbation regime (less than one photon in average per nanoparticle), which allows the direct extraction of the hot electron cooling rates in order to compare different NPs sizes under the same conditions. Spectroscopic data reveals a decrease of hot electron energy loss rates with metal/adsorbates nanosystem sizes. Electron-phonon coupling time constants obtained for 9.2 nm NPs are similar to gold bulk materials (∼1 ps) whereas an increase of hot electron cooling time up to 1.9 ps is observed for sizes of 1.7 nm. This is rationalized by the domination of surface effects over size (bulk) effects. The slow hot electron cooling is attributed to the adsorbates-induced long-lived nonthermal regime, which significantly reduces the electron-phonon coupling strength (average rate of phonon emission)

Advanced diesel electronic fuel injection and turbocharging

Science.gov (United States)

Beck, N. J.; Barkhimer, R. L.; Steinmeyer, D. C.; Kelly, J. E.

1993-12-01

The program investigated advanced diesel air charging and fuel injection systems to improve specific power, fuel economy, noise, exhaust emissions, and cold startability. The techniques explored included variable fuel injection rate shaping, variable injection timing, full-authority electronic engine control, turbo-compound cooling, regenerative air circulation as a cold start aid, and variable geometry turbocharging. A Servojet electronic fuel injection system was designed and manufactured for the Cummins VTA-903 engine. A special Servojet twin turbocharger exhaust system was also installed. A series of high speed combustion flame photos was taken using the single cylinder optical engine at Michigan Technological University. Various fuel injection rate shapes and nozzle configurations were evaluated. Single-cylinder bench tests were performed to evaluate regenerative inlet air heating techniques as an aid to cold starting. An exhaust-driven axial cooling air fan was manufactured and tested on the VTA-903 engine.

Surface and volume photoemission of hot electrons from plasmonic nanoantennas

DEFF Research Database (Denmark)

Uskov, Alexander V.; Protsenko, Igor E.; Ikhsanov, Renat S.

2014-01-01

We theoretically compare surface- and volume-based photoelectron emission from spherical nanoparticles, obtaining analytical expressions for the emission rate in both mechanisms. We show that the surface mechanism prevails, being unaffected by detrimental hot electron collisions.......We theoretically compare surface- and volume-based photoelectron emission from spherical nanoparticles, obtaining analytical expressions for the emission rate in both mechanisms. We show that the surface mechanism prevails, being unaffected by detrimental hot electron collisions....

Hot electron plasma equilibrium and stability in the Constance B mirror experiment

International Nuclear Information System (INIS)

Chen, Xing.

1988-04-01

An experimental study of the equilibrium and macroscopic stability property of an electron cyclotron resonance heating (ECRH) generated plasma in a minimum-B mirror is presented. The Constance B mirror is a single cell quadrupole magnetic mirror in which high beta (β ≤ 0.3) hot electron plasmas (T/sub e/≅400 keV) are created with up to 4 kW of ECRH power. The plasma equilibrium profile is hollow and resembles the baseball seam geometry of the magnet which provides the confining magnetic field. This configuration coincides with the drift orbit of deeply trapped particles. The on-axis hollowness of the hot electron density profile is 50 /+-/ 10%, and the pressure profile is at least as hollow as, if not more than, the hot electron density profile. The hollow plasma equilibrium is macroscopically stable and generated in all the experimental conditions in which the machine has been operated. Small macroscopic plasma fluctuations in the range of the hot electron curvature drift frequency sometimes occur but their growth rate is small (ω/sub i//ω/sub r/ ≤ 10 -2 ) and saturate at very low level (δB//bar B/ ≤ 10 -3 ). Particle drift reversal is predicted to occur for the model pressure profile which best fits the experimental data under the typical operating conditions. No strong instability is observed when the plasma is near the drift reversal parameter regime, despite a theoretical prediction of instability under such conditions. The experiment shows that the cold electron population has no stabilizing effect to the hot electrons, which disagrees with current hot electron stability theories and results of previous maximum-B experiments. A theoretical analysis using MHD theory shows that the compressibility can stabilize a plasma with a hollowness of 20--30% in the Constance B mirror well. 57 refs

Nonlinear electron-acoustic rogue waves in electron-beam plasma system with non-thermal hot electrons

Science.gov (United States)

Elwakil, S. A.; El-hanbaly, A. M.; Elgarayh, A.; El-Shewy, E. K.; Kassem, A. I.

2014-11-01

The properties of nonlinear electron-acoustic rogue waves have been investigated in an unmagnetized collisionless four-component plasma system consisting of a cold electron fluid, non-thermal hot electrons obeying a non-thermal distribution, an electron beam and stationary ions. It is found that the basic set of fluid equations is reduced to a nonlinear Schrodinger equation. The dependence of rogue wave profiles on the electron beam and energetic population parameter are discussed. The results of the present investigation may be applicable in auroral zone plasma.

Nonadiabatic dynamics of electron injection into organic molecules

International Nuclear Information System (INIS)

Zhu Li-Ping; Qiu Yu; Tong Guo-Ping

2012-01-01

We numerically investigate the injection process of electrons from metal electrodes to one-dimensional organic molecules by combining the extended Su—Schrieffer—Heeger (SSH) model with a nonadiabatic dynamics method. It is found that a match between the Fermi level of electrodes and the highest occupied molecular orbital (HOMO) or the lowest unoccupied molecular orbital (LUMO) of organic molecules can be greatly affected by the length of the organic chains, which has a great impact on electron injection. The correlation between oligomers and electrodes is found to open more efficient channels for electron injection as compared with that in polymer/electrode structures. For oligomer/electrode structures, we show that the Schottky barrier essentially does not affect the electron injection as the electrode work function is smaller than a critical value. This means that the Schottky barrier is pinned for a small work-function electrode. For polymer/electrode structures, we find that it is possible for the Fermi level of electrodes to be pinned to the polaronic level. The condition under which the Fermi level of electrodes exceeds the polaronic level of polymers is shown to not always lead to spontaneous electron transfer from electrodes to polymers. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

High-Current Gain Two-Dimensional MoS 2 -Base Hot-Electron Transistors

KAUST Repository

Torres, Carlos M.

2015-12-09

The vertical transport of nonequilibrium charge carriers through semiconductor heterostructures has led to milestones in electronics with the development of the hot-electron transistor. Recently, significant advances have been made with atomically sharp heterostructures implementing various two-dimensional materials. Although graphene-base hot-electron transistors show great promise for electronic switching at high frequencies, they are limited by their low current gain. Here we show that, by choosing MoS2 and HfO2 for the filter barrier interface and using a noncrystalline semiconductor such as ITO for the collector, we can achieve an unprecedentedly high-current gain (α ∼ 0.95) in our hot-electron transistors operating at room temperature. Furthermore, the current gain can be tuned over 2 orders of magnitude with the collector-base voltage albeit this feature currently presents a drawback in the transistor performance metrics such as poor output resistance and poor intrinsic voltage gain. We anticipate our transistors will pave the way toward the realization of novel flexible 2D material-based high-density, low-energy, and high-frequency hot-carrier electronic applications. © 2015 American Chemical Society.

High-Current Gain Two-Dimensional MoS 2 -Base Hot-Electron Transistors

KAUST Repository

Torres, Carlos M.; Lan, Yann Wen; Zeng, Caifu; Chen, Jyun Hong; Kou, Xufeng; Navabi, Aryan; Tang, Jianshi; Montazeri, Mohammad; Adleman, James R.; Lerner, Mitchell B.; Zhong, Yuan Liang; Li, Lain-Jong; Chen, Chii Dong; Wang, Kang L.

2015-01-01

The vertical transport of nonequilibrium charge carriers through semiconductor heterostructures has led to milestones in electronics with the development of the hot-electron transistor. Recently, significant advances have been made with atomically sharp heterostructures implementing various two-dimensional materials. Although graphene-base hot-electron transistors show great promise for electronic switching at high frequencies, they are limited by their low current gain. Here we show that, by choosing MoS2 and HfO2 for the filter barrier interface and using a noncrystalline semiconductor such as ITO for the collector, we can achieve an unprecedentedly high-current gain (α ∼ 0.95) in our hot-electron transistors operating at room temperature. Furthermore, the current gain can be tuned over 2 orders of magnitude with the collector-base voltage albeit this feature currently presents a drawback in the transistor performance metrics such as poor output resistance and poor intrinsic voltage gain. We anticipate our transistors will pave the way toward the realization of novel flexible 2D material-based high-density, low-energy, and high-frequency hot-carrier electronic applications. © 2015 American Chemical Society.

Hot electron attenuation of direct and scattered carriers across an epitaxial Schottky interface

NARCIS (Netherlands)

Parui, S.; Klandermans, P. S.; Venkatesan, S.; Scheu, C.; Banerjee, T.

2013-01-01

Hot electron transport of direct and scattered carriers across an epitaxial NiSi2/n-Si(111) interface, for different NiSi2 thickness, is studied using ballistic electron emission microscopy (BEEM). We find the BEEM transmission for the scattered hot electrons in NiSi2 to be significantly lower than

Facile hot-injection synthesis of stoichiometric Cu2ZnSnSe4 nanocrystals using bis(triethylsilyl) selenide.

Science.gov (United States)

Jin, Chunyu; Ramasamy, Parthiban; Kim, Jinkwon

2014-07-07

Cu2ZnSnSe4 is a prospective material as an absorber in thin film solar cells due to its many advantages including direct band gap, high absorption coefficient, low toxicity, and relative abundance (indium-free) of its elements. In this report, CZTSe nanoparticles have been synthesized by the hot-injection method using bis-(triethylsilyl)selenide [(Et3Si)2Se] as the selenium source for the first time. Energy dispersive X-ray spectroscopy (EDS) confirmed the stoichiometry of CZTSe nanoparticles. X-ray diffraction (XRD) and transmission electron microscopy (TEM) studies showed that the nanocrystals were single phase polycrystalline with their size within the range of 25-30 nm. X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy measurements ruled out the existence of secondary phases such as Cu2SnSe3 and ZnSe. The effect of reaction time and precursor injection order on the formation of stoichiometric CZTSe nanoparticles has been studied by Raman spectroscopy. UV-vis-NIR data indicate that the CZTSe nanocrystals have an optical band gap of 1.59 eV, which is optimal for photovoltaic applications.

Role of hot electron transport in scintillators: A theoretical study

Energy Technology Data Exchange (ETDEWEB)

Huang, Huihui [SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, Key Lab. of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen Univ. (China); Li, Qi [Physical Sciences Division, IBM TJ Watson Research Center, Yorktown Heights, NY (United States); Department of Computer Science, University of Illinois at Urbana-Champaign, Urbana, IL (United States); Lu, Xinfu; Williams, R.T. [Department of Physics, Wake Forest University, Winston Salem, NC (United States); Qian, Yiyang [College of Engineering and Applied Science, Nanjing University (China); Wu, Yuntao [Scintillation Materials Research Center, University of Tennessee, Knoxville, TN (United States)

2016-10-15

Despite recent intensive study on scintillators, several fundamental questions on scintillator properties are still unknown. In this work, we use ab-initio calculations to determine the energy dependent group velocity of the hot electrons from the electronic structures of several typical scintillators. Based on the calculated group velocities and optical phonon frequencies, a Monte-Carlo simulation of hot electron transport in scintillators is carried out to calculate the thermalization time and diffusion range in selected scintillators. Our simulations provide physical insights on a recent trend of improved proportionality and light yield from mixed halide scintillators. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Superluminescence from an optically pumped molecular tunneling junction by injection of plasmon induced hot electrons

Directory of Open Access Journals (Sweden)

Kai Braun

2015-05-01

Full Text Available Here, we demonstrate a bias-driven superluminescent point light-source based on an optically pumped molecular junction (gold substrate/self-assembled molecular monolayer/gold tip of a scanning tunneling microscope, operating at ambient conditions and providing almost three orders of magnitude higher electron-to-photon conversion efficiency than electroluminescence induced by inelastic tunneling without optical pumping. A positive, steadily increasing bias voltage induces a step-like rise of the Stokes shifted optical signal emitted from the junction. This emission is strongly attenuated by reversing the applied bias voltage. At high bias voltage, the emission intensity depends non-linearly on the optical pump power. The enhanced emission can be modelled by rate equations taking into account hole injection from the tip (anode into the highest occupied orbital of the closest substrate-bound molecule (lower level and radiative recombination with an electron from above the Fermi level (upper level, hence feeding photons back by stimulated emission resonant with the gap mode. The system reflects many essential features of a superluminescent light emitting diode.

Hot-Electron Intraband Luminescence from Single Hot Spots in Noble-Metal Nanoparticle Films

Science.gov (United States)

Haug, Tobias; Klemm, Philippe; Bange, Sebastian; Lupton, John M.

2015-08-01

Disordered noble-metal nanoparticle films exhibit highly localized and stable nonlinear light emission from subdiffraction regions upon illumination by near-infrared femtosecond pulses. Such hot spot emission spans a continuum in the visible and near-infrared spectral range. Strong plasmonic enhancement of light-matter interaction and the resulting complexity of experimental observations have prevented the development of a universal understanding of the origin of light emission. Here, we study the dependence of emission spectra on excitation irradiance and provide the most direct evidence yet that the continuum emission observed from both silver and gold nanoparticle aggregate surfaces is caused by recombination of hot electrons within the conduction band. The electron gas in the emitting particles, which is effectively decoupled from the lattice temperature for the duration of emission, reaches temperatures of several thousand Kelvin and acts as a subdiffraction incandescent light source on subpicosecond time scales.

Hot electron dynamics at semiconductor surfaces: Implications for quantum dot photovoltaics

Science.gov (United States)

Tisdale, William A., III

Finding a viable supply of clean, renewable energy is one of the most daunting challenges facing the world today. Solar cells have had limited impact in meeting this challenge because of their high cost and low power conversion efficiencies. Semiconductor nanocrystals, or quantum dots, are promising materials for use in novel solar cells because they can be processed with potentially inexpensive solution-based techniques and because they are predicted to have novel optoelectronic properties that could enable the realization of ultra-efficient solar power converters. However, there is a lack of fundamental understanding regarding the behavior of highly-excited, or "hot," charge carriers near quantum-dot and semiconductor interfaces, which is of paramount importance to the rational design of high-efficiency devices. The elucidation of these ultrafast hot electron dynamics is the central aim of this Dissertation. I present a theoretical framework for treating the electronic interactions between quantum dots and bulk semiconductor surfaces and propose a novel experimental technique, time-resolved surface second harmonic generation (TR-SHG), for probing these interactions. I then describe a series of experimental investigations into hot electron dynamics in specific quantum-dot/semiconductor systems. A two-photon photoelectron spectroscopy (2PPE) study of the technologically-relevant ZnO(1010) surface reveals ultrafast (sub-30fs) cooling of hot electrons in the bulk conduction band, which is due to strong electron-phonon coupling in this highly polar material. The presence of a continuum of defect states near the conduction band edge results in Fermi-level pinning and upward (n-type) band-bending at the (1010) surface and provides an alternate route for electronic relaxation. In monolayer films of colloidal PbSe quantum dots, chemical treatment with either hydrazine or 1,2-ethanedithiol results in strong and tunable electronic coupling between neighboring quantum dots

Identification of non-volatile compounds and their migration from hot melt adhesives used in food packaging materials characterized by ultra-performance liquid chromatography coupled to quadrupole time-of-flight mass spectrometry.

Science.gov (United States)

Vera, Paula; Canellas, Elena; Nerín, Cristina

2013-05-01

The identification of unknown non-volatile migrant compounds from adhesives used in food contact materials is a very challenging task because of the number of possible compounds involved, given that adhesives are complex mixtures of chemicals. The use of ultra-performance liquid chromatography coupled to quadrupole time-of-flight mass spectrometry (UPLC-MS/QTOF) is shown to be a successful tool for identifying non-targeted migrant compounds from two hot melt adhesives used in food packaging laminates. Out of the seven migrants identified and quantified, five were amides and one was a compound classified in Class II of the Cramer toxicity. None of the migration values exceeded the recommended Cramer exposure values.

Electron injection by evolution of self-modulated laser wakefields

International Nuclear Information System (INIS)

Kim, Changbum; Kim, Guang-Hoon; Kim, Jong-Uk; Lee, Hae June; Suk, Hyyong; Ko, In Soo

2003-01-01

Self-injection mechanisms in the self-modulated laser wakefield acceleration (SM-LWFA) are investigated. Two-dimensional (2D) particle-in-cell (PIC) simulations show that a significant amount of plasma electrons can be self-injected into the acceleration phase of a laser wakefield by a dynamic increase in the wake wavelength in the longitudinal direction. In this process, it is found that the wake wavelength increases due to the relativistic effect and this leads to a large amount of electron injection into the wakefields. In this paper, the injection phenomena are studied with 2D simulations and a brief explanation of the new self-injection mechanism is presented. (author)

Study of hot electrons in a ECR ion source

International Nuclear Information System (INIS)

Barue, C.

1992-12-01

The perfecting of diagnosis connected with hot electrons of plasma, and then the behaviour of measured parameters of plasma according to parameters of source working are the purpose of this thesis. The experimental results obtained give new information on hot electrons of an ECR ion source. This thesis is divided in 4 parts: the first part presents an ECR source and the experimental configuration (ECRIS physics, minimafios GHz, diagnosis used); the second part, the diagnosis (computer code of cyclotron emission and calibration); the third part gives experimental results in continuous regime (emission cyclotron diagnosis, bremsstrahlung); the fourth part, experimental results in pulsed regime (emission cyclotron diagnosis, diamagnetism) calibration)

Profile modification and hot electron temperature from resonant absorption at modest intensity

International Nuclear Information System (INIS)

Albritton, J.R.; Langdon, A.B.

1980-01-01

Resonant absorption is investigated in expanding plasmas. The momentum deposition associated with the ejection of hot electrons toward low density via wavebreaking readily exceeds that of the incident laser radiation and results in significant modification of the density profile at critical. New scaling of hot electron temperature with laser and plasma parameters is presented

Organic field-effect transistor nonvolatile memories utilizing sputtered C nanoparticles as nano-floating-gate

Energy Technology Data Exchange (ETDEWEB)

Liu, Jie; Liu, Chang-Hai; She, Xiao-Jian; Sun, Qi-Jun; Gao, Xu; Wang, Sui-Dong, E-mail: wangsd@suda.edu.cn [Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123 (China)

2014-10-20

High-performance organic field-effect transistor nonvolatile memories have been achieved using sputtered C nanoparticles as the nano-floating-gate. The sputtered C nano-floating-gate is prepared with low-cost material and simple process, forming uniform and discrete charge trapping sites covered by a smooth and complete polystyrene layer. The devices show large memory window, excellent retention capability, and programming/reading/erasing/reading endurance. The sputtered C nano-floating-gate can effectively trap both holes and electrons, and it is demonstrated to be suitable for not only p-type but also n-type organic field-effect transistor nonvolatile memories.

Organic field-effect transistor nonvolatile memories utilizing sputtered C nanoparticles as nano-floating-gate

International Nuclear Information System (INIS)

Liu, Jie; Liu, Chang-Hai; She, Xiao-Jian; Sun, Qi-Jun; Gao, Xu; Wang, Sui-Dong

2014-01-01

High-performance organic field-effect transistor nonvolatile memories have been achieved using sputtered C nanoparticles as the nano-floating-gate. The sputtered C nano-floating-gate is prepared with low-cost material and simple process, forming uniform and discrete charge trapping sites covered by a smooth and complete polystyrene layer. The devices show large memory window, excellent retention capability, and programming/reading/erasing/reading endurance. The sputtered C nano-floating-gate can effectively trap both holes and electrons, and it is demonstrated to be suitable for not only p-type but also n-type organic field-effect transistor nonvolatile memories.

Coaxial Ag/ZnO/Ag nanowire for highly sensitive hot-electron photodetection

Energy Technology Data Exchange (ETDEWEB)

Zhan, Yaohui; Li, Xiaofeng, E-mail: xfli@suda.edu.cn; Wu, Kai; Wu, Shaolong; Deng, Jiajia [College of Physics, Optoelectronics and Energy and Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006 (China); Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou 215006 (China)

2015-02-23

Single-nanowire photodetectors (SNPDs) are mostly propelled by p-n junctions, where the detection wavelength is constrained by the band-gap width. Here, we present a simple doping-free metal/semiconductor/metal SNPD, which shows strong detection tunability without such a material constraint. The proposed hot-electron SNPD exhibits superior optical and electrical advantages, i.e., optically the coaxial design leads to a strong asymmetrical photoabsorption and results in a high unidirectional photocurrent, as desired by the hot-electron collection; electrically the hot-electrons are generated in the region very close to the barrier, facilitating the electrical transport. Rigorous calculations predict an unbiased photoresponsivity of ∼200 nA/mW.

How well do time-integrated Kα images represent hot electron spatial distributions?

Science.gov (United States)

Ovchinnikov, V. M.; Kemp, G. E.; Schumacher, D. W.; Freeman, R. R.; Van Woerkom, L. D.

2011-07-01

A computational study is described, which addresses how well spatially resolved time-integrated Kα images recorded in intense laser-plasma experiments correlate with the distribution of "hot" (>1 MeV) electrons as they propagate through the target. The hot electron angular distribution leaving the laser-plasma region is critically important for many applications such as Fast Ignition or laser based x-ray sources; and Kα images are commonly used as a diagnostic. It is found that Kα images can easily mislead due to refluxing and other effects. Using the particle-in-cell code LSP, it is shown that a Kα image is not solely determined by the initial population of forward directed hot electrons, but rather also depends upon "delayed" hot electrons, and in fact continues to evolve long after the end of the laser interaction. Of particular note, there is a population of hot electrons created during the laser-plasma interaction that acquire a velocity direction opposite that of the laser and subsequently reflux off the front surface of the target, deflect when they encounter magnetic fields in the laser-plasma region, and then traverse the target in a wide spatial distribution. These delayed fast electrons create significant features in the Kα time-integrated images. Electrons refluxing from the sides and the back of the target are also found to play a significant role in forming the final Kα image. The relative contribution of these processes is found to vary depending on depth within target. These effects make efforts to find simple correlations between Kα images and, for example, Fast Ignition relevant parameters prone to error. Suggestions for future target design are provided.

Giant tunnel-electron injection in nitrogen-doped graphene

DEFF Research Database (Denmark)

Lagoute, Jerome; Joucken, Frederic; Repain, Vincent

2015-01-01

Scanning tunneling microscopy experiments have been performed to measure the local electron injection in nitrogen-doped graphene on SiC(000) and were successfully compared to ab initio calculations. In graphene, a gaplike feature is measured around the Fermi level due to a phonon-mediated tunneling...... and at carbon sites. Nitrogen doping can therefore be proposed as a way to improve tunnel-electron injection in graphene....

Hard x-ray measurements of the hot-electron rings in EBT-S

International Nuclear Information System (INIS)

Hillis, D.L.

1982-06-01

A thorough understanding of the hot electron rings in ELMO Bumpy Torus-Scale (EBT-S) is essential to the bumpy torus concept of plasma production, since the rings provide bulk plasma stability. The hot electrons are produced via electron cyclotron resonant heating using a 28-GHz cw gyrotron, which has operated up to power levels of 200 kW. The parameters of the energetic electron rings are studied via hard x-ray measurement techniques and with diamagnetic pickup coils. The hard x-ray measurements have used collimated NaI(Tl) detectors to determine the electron temperature T/sub e/ and electron density n/sub e/ for the hot electron annulus. Typical values of T/sub e/ are 400 to 500 keV and of n/sub e/ 2 to 5 x 10 11 cm -3 . The total stored energy of a single energetic electron ring as measured by diamagnetic pickup loops approaches approx. 40 J and is in good agreement with that deduced from hard x-ray measurements. By combining the experimental measurements from hard x-rays and the diamagnetic loops, an estimate can be obtained for the volume of a single hot electron ring. The ring volume is determined to be approx. 2.2 litres, and this volume remains approximately constant over the T-mode operating regime. Finally, the power in the electrons scattered out of the ring is measured indirectly by measuring the x-ray radiation produced when those electrons strike the chamber walls. The variation of this radiation with increasing microwave power levels is found to be consistent with classical scattering estimates

Channel equalization techniques for non-volatile memristor memories

KAUST Repository

Naous, Rawan

2016-03-16

Channel coding and information theoretic approaches have been utilized in conventional non-volatile memories to overcome their inherent design limitations of leakage, coupling and refresh rates. However, the continuous scaling and integration constraints set on the current devices directed the attention towards emerging memory technologies as suitable alternatives. Memristive devices are prominent candidates to replace the conventional electronics due to its non-volatility and small feature size. Nonetheless, memristor-based memories still encounter an accuracy limitation throughout the read operation addressed as the sneak path phenomenon. The readout data is corrupted with added distortion that increases significantly the bit error rate and jeopardizes the reliability of the read operation. A novel technique is applied to alleviate this distorting effect where the communication channel model is proposed for the memory array. Noise cancellation principles are applied with the aid of preset pilots to extract channel information and adjust the readout values accordingly. The proposed technique has the virtue of high speed, energy efficiency, and low complexity design while achieving high reliability and error-free decoding.

Channel equalization techniques for non-volatile memristor memories

KAUST Repository

Naous, Rawan; Zidan, Mohammed A.; Salem, Ahmed Sultan; Salama, Khaled N.

2016-01-01

Channel coding and information theoretic approaches have been utilized in conventional non-volatile memories to overcome their inherent design limitations of leakage, coupling and refresh rates. However, the continuous scaling and integration constraints set on the current devices directed the attention towards emerging memory technologies as suitable alternatives. Memristive devices are prominent candidates to replace the conventional electronics due to its non-volatility and small feature size. Nonetheless, memristor-based memories still encounter an accuracy limitation throughout the read operation addressed as the sneak path phenomenon. The readout data is corrupted with added distortion that increases significantly the bit error rate and jeopardizes the reliability of the read operation. A novel technique is applied to alleviate this distorting effect where the communication channel model is proposed for the memory array. Noise cancellation principles are applied with the aid of preset pilots to extract channel information and adjust the readout values accordingly. The proposed technique has the virtue of high speed, energy efficiency, and low complexity design while achieving high reliability and error-free decoding.

Plasmonically enhanced hot electron based photovoltaic device.

Science.gov (United States)

Atar, Fatih B; Battal, Enes; Aygun, Levent E; Daglar, Bihter; Bayindir, Mehmet; Okyay, Ali K

2013-03-25

Hot electron photovoltaics is emerging as a candidate for low cost and ultra thin solar cells. Plasmonic means can be utilized to significantly boost device efficiency. We separately form the tunneling metal-insulator-metal (MIM) junction for electron collection and the plasmon exciting MIM structure on top of each other, which provides high flexibility in plasmonic design and tunneling MIM design separately. We demonstrate close to one order of magnitude enhancement in the short circuit current at the resonance wavelengths.

Beam-plasma interaction with an electron beam injecting into a symmetrically open plasma system; Electron beam relaxation. Puchkovo-plazmennoe vzaimodejstvie pri inzhektsii ehlektronnogo puchka v simmetrichno otkrytuyu plazmennuyu sistemu; Relaksatsiya ehlektronnogo puchka

Energy Technology Data Exchange (ETDEWEB)

Opanasenko, A V; Romanyuk, L I [AN Ukrainskoj SSR, Kiev (Ukrainian SSR). Inst. Yadernykh Issledovanij

1989-10-01

The relaxation of the electron beam with the electron density of 1-2 keV injected through the symmetrically open plasma system with the independent hot cathode Penning discharge is experimentally investigated. It is shown that the velocity distribution function of the electron beam changes after passing each wave generation zone induced by the beam. The contribution of different wave zones to the beam relaxation depends on the prehistory of the beam-plasma interaction and may be regulated by the selection of the plasma system parameters. By this way the complete relaxation of the electron beam can be achieved after the beam crossing the whole system.

Scalable printed electronics: an organic decoder addressing ferroelectric non-volatile memory

Science.gov (United States)

Ng, Tse Nga; Schwartz, David E.; Lavery, Leah L.; Whiting, Gregory L.; Russo, Beverly; Krusor, Brent; Veres, Janos; Bröms, Per; Herlogsson, Lars; Alam, Naveed; Hagel, Olle; Nilsson, Jakob; Karlsson, Christer

2012-01-01

Scalable circuits of organic logic and memory are realized using all-additive printing processes. A 3-bit organic complementary decoder is fabricated and used to read and write non-volatile, rewritable ferroelectric memory. The decoder-memory array is patterned by inkjet and gravure printing on flexible plastics. Simulation models for the organic transistors are developed, enabling circuit designs tolerant of the variations in printed devices. We explain the key design rules in fabrication of complex printed circuits and elucidate the performance requirements of materials and devices for reliable organic digital logic. PMID:22900143

Significance of fundamental processes of radiation chemistry in hot atom chemical processes: electron thermalization

International Nuclear Information System (INIS)

Nishikawa, M.

1984-01-01

The author briefly reviews the current understanding of the course of electron thermalization. An outline is given of the physical picture without going into mathematical details. The analogy of electron thermalization with hot atom processes is taken as guiding principle in this paper. Content: secondary electrons (generation, track structure, yields); thermalization (mechanism, time, spatial distribution); behaviour of hot electrons. (Auth.)

Simulations of Electron Transport in Laser Hot Spots

International Nuclear Information System (INIS)

Brunner, S.; Valeo, E.

2001-01-01

Simulations of electron transport are carried out by solving the Fokker-Planck equation in the diffusive approximation. The system of a single laser hot spot, with open boundary conditions, is systematically studied by performing a scan over a wide range of the two relevant parameters: (1) Ratio of the stopping length over the width of the hot spot. (2) Relative importance of the heating through inverse Bremsstrahlung compared to the thermalization through self-collisions. As for uniform illumination [J.P. Matte et al., Plasma Phys. Controlled Fusion 30 (1988) 1665], the bulk of the velocity distribution functions (VDFs) present a super-Gaussian dependence. However, as a result of spatial transport, the tails are observed to be well represented by a Maxwellian. A similar dependence of the distributions is also found for multiple hot spot systems. For its relevance with respect to stimulated Raman scattering, the linear Landau damping of the electron plasma wave is estimated for such VD Fs. Finally, the nonlinear Fokker-Planck simulations of the single laser hot spot system are also compared to the results obtained with the linear non-local hydrodynamic approach [A.V. Brantov et al., Phys. Plasmas 5 (1998) 2742], thus providing a quantitative limit to the latter method: The hydrodynamic approach presents more than 10% inaccuracy in the presence of temperature variations of the order delta T/T greater than or equal to 1%, and similar levels of deformation of the Gaussian shape of the Maxwellian background

Efficient, Broadband and Wide-Angle Hot-Electron Transduction using Metal-Semiconductor Hyperbolic Metamaterials

KAUST Repository

Sakhdari, Maryam

2016-05-20

Hot-electron devices are emerging as promising candidates for the transduction of optical radiation into electrical current, as they enable photodetection and solar/infrared energy harvesting at sub-bandgap wavelengths. Nevertheless, poor photoconversion quantum yields and low bandwidth pose fundamental challenge to fascinating applications of hot-electron optoelectronics. Based on a novel hyperbolic metamaterial (HMM) structure, we theoretically propose a vertically-integrated hot-electron device that can efficiently couple plasmonic excitations into electron flows, with an external quantum efficiency approaching the physical limit. Further, this metamaterial-based device can have a broadband and omnidirectional response at infrared and visible wavelengths. We believe that these findings may shed some light on designing practical devices for energy-efficient photodetection and energy harvesting beyond the bandgap spectral limit.

Enhanced energy deposition symmetry by hot electron transport

International Nuclear Information System (INIS)

Wilson, D.; Mack, J.; Stover, E.; VanHulsteyn, D.; McCall, G.; Hauer, A.

1981-01-01

High energy electrons produced by resonance absorption carry the CO 2 laser energy absorbed in a laser fusion pellet. The symmetrization that can be achieved by lateral transport of the hot electrons as they deposit their energy is discussed. A K/sub α/ experiment shows a surprising symmetrization of energy deposition achieved by adding a thin layer of plastic to a copper sphere. Efforts to numerically model this effect are described

Nonvolatile Memory Elements Based on the Intercalation of Organic Molecules Inside Carbon Nanotubes

Science.gov (United States)

Meunier, Vincent; Kalinin, Sergei V.; Sumpter, Bobby G.

2007-02-01

We propose a novel class of nonvolatile memory elements based on the modification of the transport properties of a conducting carbon nanotube by the presence of an encapsulated molecule. The guest molecule has two stable orientational positions relative to the nanotube that correspond to conducting and nonconducting states. The mechanism, governed by a local gating effect of the molecule on the electronic properties of the nanotube host, is studied using density functional theory. The mechanisms of reversible reading and writing of information are illustrated with a F4TCNQ molecule encapsulated inside a metallic carbon nanotube. Our results suggest that this new type of nonvolatile memory element is robust, fatigue-free, and can operate at room temperature.

Injection and propagation of a nonrelativistic electron beam and spacecraft charging

International Nuclear Information System (INIS)

Okuda, H.; Berchem, J.

1987-05-01

Two-dimensional numerical simulations have been carried out in order to study the injection and propagation of a nonrelativistic electron beam from a spacecraft into a fully ionized plasma in a magnetic field. Contrary to the earlier results in one-dimension, a high density electron beam whose density is comparable to the ambient density can propagate into a plasma. A strong radial electric field resulting from the net charges in the beam causes the beam electrons to spread radially reducing the beam density. When the injection current exceeds the return current, significant charging of the spacecraft is observed along with the reflection of the injected electrons back to the spacecraft. Recent data on the electron beam injection from the Spacelab 1 (SEPAC) are discussed

Three-dimensional hot electron photovoltaic device with vertically aligned TiO2 nanotubes.

Science.gov (United States)

Goddeti, Kalyan C; Lee, Changhwan; Lee, Young Keun; Park, Jeong Young

2018-05-09

Titanium dioxide (TiO 2 ) nanotubes with vertically aligned array structures show substantial advantages in solar cells as an electron transport material that offers a large surface area where charges travel linearly along the nanotubes. Integrating this one-dimensional semiconductor material with plasmonic metals to create a three-dimensional plasmonic nanodiode can influence solar energy conversion by utilizing the generated hot electrons. Here, we devised plasmonic Au/TiO 2 and Ag/TiO 2 nanodiode architectures composed of TiO 2 nanotube arrays for enhanced photon absorption, and for the subsequent generation and capture of hot carriers. The photocurrents and incident photon to current conversion efficiencies (IPCE) were obtained as a function of photon energy for hot electron detection. We observed enhanced photocurrents and IPCE using the Ag/TiO 2 nanodiode. The strong plasmonic peaks of the Au and Ag from the IPCE clearly indicate an enhancement of the hot electron flux resulting from the presence of surface plasmons. The calculated electric fields and the corresponding absorbances of the nanodiode using finite-difference time-domain simulation methods are also in good agreement with the experimental results. These results show a unique strategy of combining a hot electron photovoltaic device with a three-dimensional architecture, which has the clear advantages of maximizing light absorption and a metal-semiconductor interface area.

Non-equilibrium between ions and electrons inside hot spots from National Ignition Facility experiments

Directory of Open Access Journals (Sweden)

Zhengfeng Fan

2017-01-01

Full Text Available The non-equilibrium between ions and electrons in the hot spot can relax the ignition conditions in inertial confinement fusion [Fan et al., Phys. Plasmas 23, 010703 (2016], and obvious ion-electron non-equilibrium could be observed by our simulations of high-foot implosions when the ion-electron relaxation is enlarged by a factor of 2. On the other hand, in many shots of high-foot implosions on the National Ignition Facility, the observed X-ray enhancement factors due to ablator mixing into the hot spot are less than unity assuming electrons and ions have the same temperature [Meezan et al., Phys. Plasmas 22, 062703 (2015], which is not self-consistent because it can lead to negative ablator mixing into the hot spot. Actually, this non-consistency implies ion-electron non-equilibrium within the hot spot. From our study, we can infer that ion-electron non-equilibrium exists in high-foot implosions and the ion temperature could be ∼9% larger than the equilibrium temperature in some NIF shots.

The study of metal sulphide nanomaterials obtained by chemical bath deposition and hot-injection technique

Science.gov (United States)

Maraeva, E. V.; Alexandrova, O. A.; Forostyanaya, N. A.; Levitskiy, V. S.; Mazing, D. S.; Maskaeva, L. N.; Markov, V. Ph; Moshnikov, V. A.; Shupta, A. A.; Spivak, Yu M.; Tulenin, S. S.

2015-11-01

In this study lead sulphide - cadmium sulphide based layers were obtained through chemical deposition of water solutions and cadmium sulphide quantum dots were formed through hot-injection technique. The article discusses the results of surface investigations with the use of atomic force microscopy, Raman spectroscopy and photoluminescence measurements.

Electron injection mechanisms of green organic light-emitting devices fabricated utilizing a double electron injection layer consisting of cesium carbonate and fullerene

International Nuclear Information System (INIS)

Yang, J.S.; Choo, D.C.; Kim, T.W.; Jin, Y.Y.; Seo, J.H.; Kim, Y.K.

2010-01-01

Electron injection mechanisms of the luminance efficiency of green organic light-emitting devices (OLEDs) fabricated utilizing a cesium carbonate (Cs 2 CO 3 )/fullerene (C 60 ) heterostructure acting as an electron injection layer (EIL) were investigated. Current density-voltage and luminance-voltage measurements showed that the current densities and the luminances of the OLEDs with a Cs 2 CO 3 or Cs 2 CO 3 /C 60 EIL were higher than that of the OLEDs with a Liq EIL. The luminance efficiency of the OLEDs with a Cs 2 CO 3 EIL was almost three times higher than that of the OLEDs with a Liq EIL. Because the electron injection efficiency of the Cs 2 CO 3 layer in OLEDs was different from that of the C 60 layer, the luminance efficiency of the OLEDs with a double EIL consisting of a Cs 2 CO 3 layer and a C 60 layer was smaller than that of the OLEDs with a Cs 2 CO 3 EIL. The electron injection mechanisms of OLEDs with a Cs 2 CO 3 and C 60 double EIL are described on the basis of the experimental results.

High-frequency microinstabilities in hot-electron plasmas

International Nuclear Information System (INIS)

Chen, Y.J.; Nevins, W.M.; Smith, G.R.

1981-01-01

Instabilities with frequencies in the neighborhood of the electron cyclotron frequency are of interest in determining stable operating regimes of hot-electron plasmas in EBT devices and in tandem mirrors. Previous work used model distributions significantly different than those suggested by recent Fokker-Planck studies. We use much more realistic model distributions in a computer code that solves the full electromagnetic dispersion relation governing longitudinal and transverse waves in a uniform plasma. We allow for an arbitrary direction of wave propagation. Results for the whistler and upper-hybrid loss-cone instabilities are presented

Hot electron spatial distribution under presence of laser light self-focusing in over-dense plasmas

International Nuclear Information System (INIS)

Tanimoto, T; Yabuuchi, T; Habara, H; Kondo, K; Kodama, R; Mima, K; Tanaka, K A; Lei, A L

2008-01-01

In fast ignition for laser thermonuclear fusion, an ultra intense laser (UIL) pulse irradiates an imploded plasma in order to fast-heat a high-density core with hot electrons generated in laser-plasma interactions. An UIL pulse needs to make plasma channel via laser self-focusing and to propagate through the corona plasma to reach close enough to the core. Hot electrons are used for heating the core. Therefore the propagation of laser light in the high-density plasma region and spatial distribution of hot electron are important in issues in order to study the feasibility of this scheme. We measure the spatial distribution of hot electron when the laser light propagates into the high-density plasma region by self-focusing

The immunostimulatory effects of hot-water extract of Gelidium amansii via immersion, injection and dietary administrations on white shrimp Litopenaeus vannamei and its resistance against Vibrio alginolyticus.

Science.gov (United States)

Fu, Yu-Win; Hou, Wen-Ying; Yeh, Su-Tuen; Li, Chiu-Hsia; Chen, Jiann-Chu

2007-06-01

The total haemocyte count (THC), phenoloxidase activity, and respiratory burst were examined when white shrimp Litopenaeus vannamei were immersed in seawater (34 per thousand) containing hot-water extract of red alga Gelidium amansii at 200, 400 and 600 mg l(-1), injected with hot-water extract at 4 and 6 microg g(-1) shrimp, and fed diets containing hot-water extract at 0, 0.5, 1.0 and 2.0 g kg(-1). These parameters increased significantly when shrimp were immersed in seawater containing hot-water extract at 400 and 600 mg l(-1) after 1h, when shrimp were injected with hot-water extract at 6 microg g(-1) shrimp after one day, and when shrimp were fed diets containing hot-water extract at 1.0 and 2.0 g kg(-1) after 14 days. Phagocytic activity and clearance efficiency were significantly higher for the shrimp that were fed diets containing hot-water extract at 1.0 and 2.0 g kg(-1) than those of shrimp that were fed diets containing hot-water extract at 0 and 0.5 g kg(-1) after 14 and 28 days. In a separate experiment, L. vannamei which had received hot-water extract via injection, or fed diets containing hot-water extract, were challenged after 3h or 28 days with V. alginolyticus at 2 x 10(6) cfu shrimp(-1) and 1 x 10(6) cfu shrimp(-1), respectively, and then placed in seawater. The survival of shrimp that were injected with hot-water extract at 6 microg g(-1) was significantly higher than that of control shrimp after 1 day, and the survival of shrimp fed diets containing hot-water extract at 0.5, 1.0 and 2.0 g kg(-1) increased significantly after 3 days as well as at the end of the experiment (6 days after the challenge), respectively. It was concluded that L. vannamei that were immersed in hot-water extract at 400 mg l(-1), injected with hot-water extract at 6 microg g(-1) shrimp, and fed hot-water extract of G. amansii at 2.0 g kg(-1) or less showed increased immune ability as well as resistance to V. alginolyticus infection.

The study of metal sulphide nanomaterials obtained by chemical bath deposition and hot-injection technique

International Nuclear Information System (INIS)

Maraeva, E V; Alexandrova, O A; Levitskiy, V S; Mazing, D S; Moshnikov, V A; Shupta, A A; Spivak, Yu M; Forostyanaya, N A; Maskaeva, L N; Markov, V Ph; Tulenin, S S

2015-01-01

In this study lead sulphide – cadmium sulphide based layers were obtained through chemical deposition of water solutions and cadmium sulphide quantum dots were formed through hot-injection technique. The article discusses the results of surface investigations with the use of atomic force microscopy, Raman spectroscopy and photoluminescence measurements. (paper)

Specular Reflectivity and Hot-Electron Generation in High-Contrast Relativistic Laser-Plasma Interactions

Energy Technology Data Exchange (ETDEWEB)

Kemp, Gregory Elijah [The Ohio State Univ., Columbus, OH (United States)

2013-01-01

Ultra-intense laser (> 1018 W/cm2) interactions with matter are capable of producing relativistic electrons which have a variety of applications in state-of-the-art scientific and medical research conducted at universities and national laboratories across the world. Control of various aspects of these hot-electron distributions is highly desired to optimize a particular outcome. Hot-electron generation in low-contrast interactions, where significant amounts of under-dense pre-plasma are present, can be plagued by highly non-linear relativistic laser-plasma instabilities and quasi-static magnetic field generation, often resulting in less than desirable and predictable electron source characteristics. High-contrast interactions offer more controlled interactions but often at the cost of overall lower coupling and increased sensitivity to initial target conditions. An experiment studying the differences in hot-electron generation between high and low-contrast pulse interactions with solid density targets was performed on the Titan laser platform at the Jupiter Laser Facility at Lawrence Livermore National Laboratory in Livermore, CA. To date, these hot-electrons generated in the laboratory are not directly observable at the source of the interaction. Instead, indirect studies are performed using state-of-the-art simulations, constrained by the various experimental measurements. These measurements, more-often-than-not, rely on secondary processes generated by the transport of these electrons through the solid density materials which can susceptible to a variety instabilities and target material/geometry effects. Although often neglected in these types of studies, the specularly reflected light can provide invaluable insight as it is directly influenced by the interaction. In this thesis, I address the use of (personally obtained) experimental specular reflectivity measurements to indirectly study hot-electron generation in the context of high-contrast, relativistic

A gas production system from methane hydrate layers by hot water injection and BHP control with radial horizontal wells

Energy Technology Data Exchange (ETDEWEB)

Yamakawa, T.; Ono, S.; Iwamoto, A.; Sugai, Y.; Sasaki, K. [Kyushu Univ., Fukuoka, Fukuoka (Japan)

2010-07-01

Reservoir characterization of methane hydrate (MH) bearing turbidite channel in the eastern Nankai Trough, in Japan has been performed to develop a gas production strategy. This paper proposed a gas production system from methane hydrate (MH) sediment layers by combining the hot water injection method and bottom hole pressure control at the production well using radial horizontal wells. Numerical simulations of the cylindrical homogeneous MH layer model were performed in order to evaluate gas production characteristics by the depressurization method with bottom hole pressure control. In addition, the effects of numerical block modeling and averaging physical properties of MH layers were presented. According to numerical simulations, combining the existing production system with hot water injection and bottom hole pressure control results in an outward expansion of the hot water chamber from the center of the MH layer with continuous gas production. 10 refs., 15 figs.

Measurements of hot electrons in the Extrap T1 reversed-field pinch

International Nuclear Information System (INIS)

Welander, A.; Bergsaaker, H.

1998-01-01

The presence of an anisotropic energetic electron population in the edge region is a characteristic feature of reversed-field pinch (RFP) plasmas. In the Extrap T1 RFP, the anisotropic, parallel heat flux in the edge region measured by calorimetry was typically several hundred MWm -2 . To gain more insight into the origin of the hot electron component and to achieve time resolution of the hot electron flow during the discharge, a target probe with a soft x-ray monitor was designed, calibrated and implemented. The x-ray emission from the target was measured with a surface barrier detector covered with a set of different x-ray filters to achieve energy resolution. A calibration in the range 0.5-2 keV electron energy was performed on the same target and detector assembly using a LaB 6 cathode electron gun. The calibration data are interpolated and extrapolated numerically. A directional asymmetry of more than a factor of 100 for the higher energy electrons is observed. The hot electrons are estimated to constitute 10% of the total electron density at the edge and their energy distribution is approximated by a half-Maxwellian with a temperature slightly higher than the central electron temperature. Scalings with plasma current, as well as correlations with local Hα measurements and radial dependences, are presented. (author)

Superconducting cuprate heterostructures for hot electron bolometers

Science.gov (United States)

Wen, B.; Yakobov, R.; Vitkalov, S. A.; Sergeev, A.

2013-11-01

Transport properties of the resistive state of quasi-two dimensional superconducting heterostructures containing ultrathin La2-xSrxCuO4 layers synthesized using molecular beam epitaxy are studied. The electron transport exhibits strong deviation from Ohm's law, δV ˜γI3, with a coefficient γ(T) that correlates with the temperature variation of the resistivity dρ /dT. Close to the normal state, analysis of the nonlinear behavior in terms of electron heating yields an electron-phonon thermal conductance per unit area ge -ph≈1 W/K cm2 at T = 20 K, one-two orders of magnitude smaller than in typical superconductors. This makes superconducting LaSrCuO heterostructures to be attractive candidate for the next generation of hot electron bolometers with greatly improved sensitivity.

Superconducting cuprate heterostructures for hot electron bolometers

International Nuclear Information System (INIS)

Wen, B.; Yakobov, R.; Vitkalov, S. A.; Sergeev, A.

2013-01-01

Transport properties of the resistive state of quasi-two dimensional superconducting heterostructures containing ultrathin La 2−x Sr x CuO 4 layers synthesized using molecular beam epitaxy are studied. The electron transport exhibits strong deviation from Ohm's law, δV∼γI 3 , with a coefficient γ(T) that correlates with the temperature variation of the resistivity dρ/dT. Close to the normal state, analysis of the nonlinear behavior in terms of electron heating yields an electron-phonon thermal conductance per unit area g e−ph ≈1 W/K cm 2 at T = 20 K, one-two orders of magnitude smaller than in typical superconductors. This makes superconducting LaSrCuO heterostructures to be attractive candidate for the next generation of hot electron bolometers with greatly improved sensitivity

Hot Electron Nanoscopy and Spectroscopy (HENs)

KAUST Repository

Giugni, Andrea; Torre, Bruno; Allione, Marco; Perozziello, Gerardo; Candeloro, Patrizio; Di Fabrizio, Enzo M.

2017-01-01

This chapter includes a brief description of different laser coupling methods with guided surface plasmon polariton (SPP) modes at the surface of a cone. It shows some devices, their electromagnetic simulations, and their optical characterization. A theoretical section illustrates the optical and quantum description of the hot charge generation rate as obtained for the SPP propagation along the nanocone in adiabatic compression. The chapter also shows some experimental results concerning the application of the hot electron nanoscopy and spectroscopy (HENs) in the so-called Schottky configuration, highlighting the sensitivity and the nanoscale resolution of the technique. The comparison with Kelvin probe and other electric atomic force microscopy (AFM) techniques points out the intrinsic advantages of the HENs. In the end, some further insights are given about the possibility of exploiting HENs with a pulsed laser at the femtosecond time scale without significant pulse broadening and dispersion.

Hot Electron Nanoscopy and Spectroscopy (HENs)

KAUST Repository

Giugni, Andrea

2017-08-17

This chapter includes a brief description of different laser coupling methods with guided surface plasmon polariton (SPP) modes at the surface of a cone. It shows some devices, their electromagnetic simulations, and their optical characterization. A theoretical section illustrates the optical and quantum description of the hot charge generation rate as obtained for the SPP propagation along the nanocone in adiabatic compression. The chapter also shows some experimental results concerning the application of the hot electron nanoscopy and spectroscopy (HENs) in the so-called Schottky configuration, highlighting the sensitivity and the nanoscale resolution of the technique. The comparison with Kelvin probe and other electric atomic force microscopy (AFM) techniques points out the intrinsic advantages of the HENs. In the end, some further insights are given about the possibility of exploiting HENs with a pulsed laser at the femtosecond time scale without significant pulse broadening and dispersion.

A radiation-tolerant, low-power non-volatile memory based on silicon nanocrystal quantum dots

OpenAIRE

Bell, L. D.; Boer, E.; Ostraat, M.; Brongersma, M. L.; Flagan, R. C.; Atwater, H. A.; De Blauwe, J.; Green, M. L.

2001-01-01

Nanocrystal nonvolatile floating-gate memories are a good candidate for space applications - initial results suggest they are fast, more reliable and consume less power than conventional floating gate memories. In the nanocrystal based NVM device, charge is not stored on a continuous polysilicon layer (so-called floating gate), but instead on a layer of discrete nanocrystals. Charge injection and storage in dense arrays of silicon nanocrystals in SiO_2 is a critical aspect of the performance ...

Amplification of hot electron flow by the surface plasmon effect on metal–insulator–metal nanodiodes

International Nuclear Information System (INIS)

Lee, Changhwan; Nedrygailov, Ievgen I; Keun Lee, Young; Lee, Hyosun; Young Park, Jeong; Ahn, Changui; Jeon, Seokwoo

2015-01-01

Au–TiO_2–Ti nanodiodes with a metal–insulator–metal structure were used to probe hot electron flows generated upon photon absorption. Hot electrons, generated when light is absorbed in the Au electrode of the nanodiode, can travel across the TiO_2, leading to a photocurrent. Here, we demonstrate amplification of the hot electron flow by (1) localized surface plasmon resonance on plasmonic nanostructures fabricated by annealing the Au–TiO_2–Ti nanodiodes, and (2) reducing the thickness of the TiO_2. We show a correlation between changes in the morphology of the Au electrodes caused by annealing and amplification of the photocurrent. Based on the exponential dependence of the photocurrent on TiO_2 thickness, the transport mechanism for the hot electrons across the nanodiodes is proposed. (paper)

Nonvolatile Rad-Hard Holographic Memory

Science.gov (United States)

Chao, Tien-Hsin; Zhou, Han-Ying; Reyes, George; Dragoi, Danut; Hanna, Jay

2001-01-01

We are investigating a nonvolatile radiation-hardened (rad-hard) holographic memory technology. Recently, a compact holographic data storage (CHDS) breadboard utilizing an innovative electro-optic scanner has been built and demonstrated for high-speed holographic data storage and retrieval. The successful integration of this holographic memory breadboard has paved the way for follow-on radiation resistance test of the photorefractive (PR) crystal, Fe:LiNbO3. We have also started the investigation of using two-photon PR crystals that are doubly doped with atoms of iron group (Ti, Cr, Mn, Cu) and of rare-earth group (Nd, Tb) for nonvolatile holographic recordings.

Metal-organic molecular device for non-volatile memory storage

International Nuclear Information System (INIS)

Radha, B.; Sagade, Abhay A.; Kulkarni, G. U.

2014-01-01

Non-volatile memory devices have been of immense research interest for their use in active memory storage in powered off-state of electronic chips. In literature, various molecules and metal compounds have been investigated in this regard. Molecular memory devices are particularly attractive as they offer the ease of storing multiple memory states in a unique way and also represent ubiquitous choice for miniaturized devices. However, molecules are fragile and thus the device breakdown at nominal voltages during repeated cycles hinders their practical applicability. Here, in this report, a synergetic combination of an organic molecule and an inorganic metal, i.e., a metal-organic complex, namely, palladium hexadecylthiolate is investigated for memory device characteristics. Palladium hexadecylthiolate following partial thermolysis is converted to a molecular nanocomposite of Pd(II), Pd(0), and long chain hydrocarbons, which is shown to exhibit non-volatile memory characteristics with exceptional stability and retention. The devices are all solution-processed and the memory action stems from filament formation across the pre-formed cracks in the nanocomposite film.

Experimental study for angular distribution of the hot electrons generated by femtosecond laser interaction with solid targets

International Nuclear Information System (INIS)

Cai, D.F.; Gu, Y.Q.; Zheng, Z.J.; Wen, T.S.; Chunyu, S.T.; Wang, Z.B.; Yang, X.D.

2003-01-01

The experimental results of angular distribution of hot electrons in the interaction of a 60 fs, 125 mJ, 800 nm, ∼10 17 W cm -2 laser pulse with Al targets are reported. Three obvious peaks of hot electrons emission have been observed, as there is a weak normal component of the laser electric field. These emission peaks are located in the directions of the specular reflection of the laser, the target normal, and the backreflection of the laser, respectively. In the case of the P-polarized laser pulse, which has a strong normal component of the laser electric field, the peak in the backreflection of the laser disappeared, and only two obvious peaks of hot electron emissions existed. It shows that the different directions of hot electrons emission are dominated by different absorption or acceleration mechanisms. The experimental result of the hot electrons energy spectrum at the target normal shows that the effective temperature of hot electrons is about 190 keV, which is consistent with a scaling law of the resonance absorption

Monte Carlo study of electron-plasmon scattering effects on hot electron transport in GaAs

International Nuclear Information System (INIS)

Popov, V.V.; Bagaeva, T.Yu.; Solodkaya, T.I.

1994-07-01

It is shown using Monte Carlo simulation that electron-plasmon scattering affects substantially the hot-electron energy distribution function and transport properties in bulk GaAs. However, this effect is found to be much less than that predicted in earlier paper of other authors. (author). 5 refs, 7 figs

Plasma relaxation of cold electrons and hot ions

International Nuclear Information System (INIS)

Potapenko, I.F.; Sakanaka, P.H.

1996-01-01

The relaxation process of a space uniform plasma composed of cold electrons and one species of hot ions studied numerically. Special attention has been paid to the deviation of relaxation from the classical picture which is characterized by a weakly non-isothermic situation. (author). 6 refs., 2 figs

Production of hot electrons in mirror systems associated with ECR heating with longitudinal input of microwaves

International Nuclear Information System (INIS)

Zhil'tsov, V.A.; Skovoroda, A.A.; Timofeev, A.V.; Kharitonov, K.Yu.; Shcherbakov, A.G.

1991-01-01

Almost all experiments on ECR plasma heating are accompanied by the formation of hot electrons (i.e., electrons with energy substantially greater than the average of the bulk population). In mirror systems these electrons may determine the basic energy content (β) of the plasma. In this paper, results are presented from experimental measurements of the hot electron population resulting from ECR heating of the plasma in OGRA-4. A theoretical model is developed which describes the hot electron dynamics and the propagation of electromagnetic oscillations in the plasma self-consistently. The results obtained with this model are in agreement with experimental data

Imaging Plasmon Hybridization of Fano Resonances via Hot-Electron-Mediated Absorption Mapping.

Science.gov (United States)

Simoncelli, Sabrina; Li, Yi; Cortés, Emiliano; Maier, Stefan A

2018-05-04

The inhibition of radiative losses in dark plasmon modes allows storing electromagnetic energy more efficiently than in far-field excitable bright-plasmon modes. As such, processes benefiting from the enhanced absorption of light in plasmonic materials could also take profit of dark plasmon modes to boost and control nanoscale energy collection, storage, and transfer. We experimentally probe this process by imaging with nanoscale precision the hot-electron driven desorption of thiolated molecules from the surface of gold Fano nanostructures, investigating the effect of wavelength and polarization of the incident light. Spatially resolved absorption maps allow us to show the contribution of each element of the nanoantenna in the hot-electron driven process and their interplay in exciting a dark plasmon mode. Plasmon-mode engineering allows control of nanoscale reactivity and offers a route to further enhance and manipulate hot-electron driven chemical reactions and energy-conversion and transfer at the nanoscale.

Interlayer electron-hole pair multiplication by hot carriers in atomic layer semiconductor heterostructures

Science.gov (United States)

Barati, Fatemeh; Grossnickle, Max; Su, Shanshan; Lake, Roger; Aji, Vivek; Gabor, Nathaniel

Two-dimensional heterostructures composed of atomically thin transition metal dichalcogenides provide the opportunity to design novel devices for the study of electron-hole pair multiplication. We report on highly efficient multiplication of interlayer electron-hole pairs at the interface of a tungsten diselenide / molybdenum diselenide heterostructure. Electronic transport measurements of the interlayer current-voltage characteristics indicate that layer-indirect electron-hole pairs are generated by hot electron impact excitation. Our findings, which demonstrate an efficient energy relaxation pathway that competes with electron thermalization losses, make 2D semiconductor heterostructures viable for a new class of hot-carrier energy harvesting devices that exploit layer-indirect electron-hole excitations. SHINES, an Energy Frontier Research Center funded by the U.S. Department of Energy, Air Force Office of Scientific Research.

Ideal magnetohydrodynamic simulations of low beta compact toroid injection into a hot strongly magnetized plasma

Energy Technology Data Exchange (ETDEWEB)

Liu, Wei [Los Alamos National Laboratory; Hsu, Scott [Los Alamos National Laboratory; Li, Hui [Los Alamos National Laboratory

2009-01-01

We present results from three-dimensional ideal magnetohydrodynamic simulations of low {beta} compact toroid (CT) injection into a hot strongly magnetized plasma, with the aim of providing insight into CT fueling of a tokamak with parameters relevant for ITER (International Thermonuclear Experimental Reactor). A regime is identified in terms of CT injection speed and CT-to-background magnetic field ratio that appears promising for precise core fueling. Shock-dominated regimes, which are probably unfavorable for tokamak fueling, are also identified. The CT penetration depth is proportional to the CT injection speed and density. The entire CT evolution can be divided into three stages: (1) initial penetration, (2) compression in the direction of propagation and reconnection, and (3) coming to rest and spreading in the direction perpendicular to injection. Tilting of the CT is not observed due to the fast transit time of the CT across the background plasma.

Measurements of hot electrons in the Extrap T1 reversed-field pinch

Science.gov (United States)

Welander, A.; Bergsåker, H.

1998-02-01

The presence of an anisotropic energetic electron population in the edge region is a characteristic feature of reversed-field pinch (RFP) plasmas. In the Extrap T1 RFP, the anisotropic, parallel heat flux in the edge region measured by calorimetry was typically several hundred 0741-3335/40/2/011/img1. To gain more insight into the origin of the hot electron component and to achieve time resolution of the hot electron flow during the discharge, a target probe with a soft x-ray monitor was designed, calibrated and implemented. The x-ray emission from the target was measured with a surface barrier detector covered with a set of different x-ray filters to achieve energy resolution. A calibration in the range 0.5-2 keV electron energy was performed on the same target and detector assembly using a 0741-3335/40/2/011/img2 cathode electron gun. The calibration data are interpolated and extrapolated numerically. A directional asymmetry of more than a factor of 100 for the higher energy electrons is observed. The hot electrons are estimated to constitute 10% of the total electron density at the edge and their energy distribution is approximated by a half-Maxwellian with a temperature slightly higher than the central electron temperature. Scalings with plasma current, as well as correlations with local 0741-3335/40/2/011/img3 measurements and radial dependences, are presented.

Proton beam shaped by “particle lens” formed by laser-driven hot electrons

International Nuclear Information System (INIS)

Zhai, S. H.; Shen, B. F.; Wang, W. P.; Zhang, H.; Zhang, L. G.; Huang, S.; Xu, Z. Z.; He, S. K.; Lu, F.; Zhang, F. Q.; Deng, Z. G.; Dong, K. G.; Wang, S. Y.; Zhou, K. N.; Xie, N.; Wang, X. D.; Liu, H. J.; Zhao, Z. Q.; Gu, Y. Q.; Zhang, B. H.

2016-01-01

Two-dimensional tailoring of a proton beam is realized by a “particle lens” in our experiment. A large quantity of electrons, generated by an intense femtosecond laser irradiating a polymer target, produces an electric field strong enough to change the trajectory and distribution of energetic protons flying through the electron area. The experiment shows that a strip pattern of the proton beam appears when hot electrons initially converge inside the plastic plate. Then the shape of the proton beam changes to a “fountain-like” pattern when these hot electrons diffuse after propagating a distance.

Experimental study on energy distribution of the hot electrons generated by femtosecond laser interacting with solid targets

International Nuclear Information System (INIS)

Gu Yuqiu; Zheng Zhijian; Zhou Weimin; Wen Tianshu; Chunyu Shutai; Cai Dafeng; Sichuan Univ., Chengdu; Neijiang Teachers College, Neijiang; Jiao Chunye; Chen Hao; Sichuan Univ., Chengdu; Yang Xiangdong

2005-01-01

This paper reports the results of the experiment of hot electron energy distribution during the femtosecond laser-solid target interaction. The hot electrons formed an anisotropic energy distribution. In the direction of the target normal, the energy spectrum of the hot electron was a Maxwellian-like distribution with an effective temperature of 206 keV, which was due to the resonance absorption. In the direction of the specular reflection of laser, there appeared a local plateau of hot electron energy spectrum at the beginning and then it was decreased gradually, which maybe produced by several acceleration mechanisms. The effective temperature and the yield of hot electrons in the direction of the target normal is larger than those in the direction of the specular reflection of laser, which proves that the resonance absorption mechanism is more effective than others. (authors)

X-rays diagnostics of the hot electron energy distribution in the intense laser interaction with metal targets

Science.gov (United States)

Kostenko, O. F.; Andreev, N. E.; Rosmej, O. N.

2018-03-01

A two-temperature hot electron energy distribution has been revealed by modeling of bremsstrahlung emission, measured by the radiation attenuation and half-shade methods, and Kα emission from a massive silver cylinder irradiated by a subpicosecond s-polarized laser pulse with a peak intensity of about 2 × 1019 W/cm2. To deduce parameters of the hot electron spectrum, we have developed semi-analytical models of generation and measurements of the x-rays. The models are based on analytical expressions and tabulated data on electron stopping power as well as cross-sections of generation and absorption of the x-rays. The Kα emission from thin silver foils deposited on low-Z substrates, both conducting and nonconducting, has been used to verify the developed models and obtained hot electron spectrum. The obtained temperatures of the colder and hotter electron components are in agreement with the values predicted by kinetic simulations of the cone-guided approach to fast ignition [Chrisman et al., Phys. Plasmas 15, 056309 (2008)]. The temperature of the low-energy component of the accelerated electron spectrum is well below the ponderomotive scaling and Beg's law. We have obtained relatively low conversion efficiency of laser energy into the energy of hot electrons propagating through the solid target of about 2%. It is demonstrated that the assumption about a single-temperature hot electron energy distribution with the slope temperature described by the ponderomotive scaling relationship, without detailed analysis of the hot electron spectrum, can lead to strong overestimation of the laser-to-electron energy-conversion efficiency, in particular, the conversion efficiency of laser energy into the high-temperature component of the hot electron distribution.

Modification of the Absorption Edge of GaAs Arising from Hot-Electron Effects

DEFF Research Database (Denmark)

McGroddy, J. C.; Christensen, Ove

1973-01-01

We have observed a large enhancement of the electric-field-induced optical absorption arising from hot-electron effects in n-type GaAs at 77 K. The magnitude and field dependence of the enhancement can be approximately accounted for by a theory attributing the effect to broadening of the final...... states of the optical transitions by interaction with the nonequilibrium optical phonons produced by the hot electrons....

Nonvolatile memory characteristics in metal-oxide-semiconductors containing metal nanoparticles fabricated by using a unique laser irradiation method

International Nuclear Information System (INIS)

Yang, JungYup; Yoon, KapSoo; Kim, JuHyung; Choi, WonJun; Do, YoungHo; Kim, ChaeOk; Hong, JinPyo

2006-01-01

Metal-oxide-semiconductor (MOS) capacitors with metal nanoparticles (Co NP) were successfully fabricated by utilizing an external laser exposure technique for application of non-volatile memories. Images of high-resolution transmission electron microscopy reveal that the spherically shaped Co NP are clearly embedded in the gate oxide layer. Capacitance-voltage measurements exhibit typical charging and discharging effects with a large flat-band shift. The effects of the tunnel oxide thickness and the different tunnel materials are analyzed using capacitance-voltage and retention characteristics. In addition, the memory characteristics of the NP embedded in a high-permittivity material are investigated because the thickness of conventionally available SiO 2 gates is approaching the quantum tunneling limit as devices are scaled down. Finally, the suitability of NP memory devices for nonvolatile memory applications is also discussed. The present results suggest that our unique laser exposure technique holds promise for the NP formation as floating gate elements in nonvolatile NP memories and that the quality of the tunnel oxide is very important for enhancing the retention properties of nonvolatile memory.

ZnO as dielectric for optically transparent non-volatile memory

International Nuclear Information System (INIS)

Salim, N. Tjitra; Aw, K.C.; Gao, W.; Wright, Bryon E.

2009-01-01

This paper discusses the application of a DC sputtered ZnO thin film as a dielectric in an optically transparent non-volatile memory. The main motivation for using ZnO as a dielectric is due to its optical transparency and mechanical flexibility. We have established the relationship between the electrical resistivity (ρ) and the activation energy (E a ) of the electron transport in the conduction band of the ZnO film. The ρ of 2 x 10 4 -5 x 10 7 Ω-cm corresponds to E a of 0.36-0.76 eV, respectively. The k-value and optical band-gap for films sputtered with Ar:O 2 ratio of 4:1 are 53 ± 3.6 and 3.23 eV, respectively. In this paper, the basic charge storage element for a non-volatile memory is a triple layer dielectric structure in which a 50 nm thick ZnO film is sandwiched between two layers of methyl silsesquioxane sol-gel dielectric of varying thickness. A pronounced clockwise capacitance-voltage (C-V) hysteresis was observed with a memory window of 6 V. The integration with a solution-processable pentacene, 13,6-N-Sulfinylacetamodipentacene resulted in an optically transparent organic field effect transistor non-volatile memory (OFET-NVM). We have demonstrated that this OFET-NVM can be electrically programmed and erased at low voltage (± 10 V) with a threshold voltage shift of 4.0 V.

Numerical study of hot-leg ECC injection into the upper plenum of a pressurized water reactor

International Nuclear Information System (INIS)

Daly, B.J.; Torrey, M.D.; Rivard, W.C.

1981-01-01

In certain pressurized water reactor (PWR) designs, emergency core coolant (ECC) is injected through the hot legs into the upper plenum. The condensation of steam on this subcooled liquid stream reduces the pressure in the hot legs and upper plenum and thereby affects flow conditions throughout the reactor. In the present study, we examine countercurrent steam-water flow in the hot leg to determine the deceleration of the ECC flow that results from an adverse pressure gradient and from momentum exchange from the steam by interfacial drag and condensation. For the parameters examined in the study, water flow reversal is observed for a pressure drop of 22 to 32 mBar over the 1.5 m hot leg. We have also performed a three-dimensional study of subcooled water injection into air and steam environments of the upper plenum. The ECC water is deflected by an array of cylindrical guide tubes in its passage through the upper plenum. Comparisons of the air-water results with data obtained in a full scale experiment shows reasonable agreement, but indicates that there may be too much resistance to horizontal flow about the columns because of the use of a stair-step representation of the cylindrical guide tube cross section. Calculations of flow past single columns of stair-step, square and circular cross section do indicate excessive water deeentrainment by the noncircular column. This has prompted the use of an arbitrary mesh computational procedure to more accuratey represent the circular cross-section guide tubes. 15 figures

Results and analysis of the TMX electron-beam injection experiments

International Nuclear Information System (INIS)

Poulsen, P.; Grubb, D.P.

1980-01-01

Electron beams (e-beams) were injected into the Tandem Mirror Experiment (TMX) plasma in order to investigate the effect on the ion cyclotron fluctuations of the plasma. The power level of the e-beams was comparable to that of the injected neutral beams. It was found that injection of the e-beams produced no significant effect on the ion cyclotron fluctuations, the measured plasma parameters, or the particle and power flow of the plasma. The increase in bulk electron temperature and the production of mirror-confined electrons found in previous experiments in which e-beams were injected into a mirror-confined plasma were not observed in this experiment. Analysis of the regions and frequencies of wave creation and absorption within the plasma shows that the plasma density and magnetic field profiles through the plasma strongly affect the resonances encountered by the waves. The steep axial density profiles produced by neutral-beam injection in the TMX experiment are not conducive to efficient coupling of the e-beam energy to the plasma

Physical principles and current status of emerging non-volatile solid state memories

Science.gov (United States)

Wang, L.; Yang, C.-H.; Wen, J.

2015-07-01

Today the influence of non-volatile solid-state memories on persons' lives has become more prominent because of their non-volatility, low data latency, and high robustness. As a pioneering technology that is representative of non-volatile solidstate memories, flash memory has recently seen widespread application in many areas ranging from electronic appliances, such as cell phones and digital cameras, to external storage devices such as universal serial bus (USB) memory. Moreover, owing to its large storage capacity, it is expected that in the near future, flash memory will replace hard-disk drives as a dominant technology in the mass storage market, especially because of recently emerging solid-state drives. However, the rapid growth of the global digital data has led to the need for flash memories to have larger storage capacity, thus requiring a further downscaling of the cell size. Such a miniaturization is expected to be extremely difficult because of the well-known scaling limit of flash memories. It is therefore necessary to either explore innovative technologies that can extend the areal density of flash memories beyond the scaling limits, or to vigorously develop alternative non-volatile solid-state memories including ferroelectric random-access memory, magnetoresistive random-access memory, phase-change random-access memory, and resistive random-access memory. In this paper, we review the physical principles of flash memories and their technical challenges that affect our ability to enhance the storage capacity. We then present a detailed discussion of novel technologies that can extend the storage density of flash memories beyond the commonly accepted limits. In each case, we subsequently discuss the physical principles of these new types of non-volatile solid-state memories as well as their respective merits and weakness when utilized for data storage applications. Finally, we predict the future prospects for the aforementioned solid-state memories for

Plasmonic photocatalytic reactions enhanced by hot electrons in a one-dimensional quantum well

Directory of Open Access Journals (Sweden)

H. J. Huang

2015-11-01

Full Text Available The plasmonic endothermic oxidation of ammonium ions in a spinning disk reactor resulted in light energy transformation through quantum hot charge carriers (QHC, or quantum hot electrons, during a chemical reaction. It is demonstrated with a simple model that light of various intensities enhance the chemical oxidization of ammonium ions in water. It was further observed that light illumination, which induces the formation of plasmons on a platinum (Pt thin film, provided higher processing efficiency compared with the reaction on a bare glass disk. These induced plasmons generate quantum hot electrons with increasing momentum and energy in the one-dimensional quantum well of a Pt thin film. The energy carried by the quantum hot electrons provided the energy needed to catalyze the chemical reaction. The results indicate that one-dimensional confinement in spherical coordinates (i.e., nanoparticles is not necessary to provide an extra excited state for QHC generation; an 8 nm Pt thin film for one-dimensional confinement in Cartesian coordinates can also provide the extra excited state for the generation of QHC.

Production of a monoenergetic electron bunch in a self-injected laser-wakefield accelerator

International Nuclear Information System (INIS)

Chang, C.-L.; Hsieh, C.-T.; Ho, Y.-C.; Chen, Y.-S.; Lin, J.-Y.; Wang, J.; Chen, S.-Y.

2007-01-01

Production of a monoenergetic electron bunch in a self-injected laser-wakefield accelerator is investigated with a tomographic method which resolves the electron injection and acceleration processes. It is found that all the electrons in the monoenergetic electron bunch are injected at the same location in the plasma column and then accelerated with an acceleration gradient exceeding 2 GeV/cm. The injection position shifts with the position of pump-pulse focus, and no significant deceleration is observed for the monoenergetic electron bunch after it reaches the maximum energy. The results are consistent with the model of transverse wave breaking and beam loading for the injection of monoenergetic electrons. The tomographic method adds a crucial dimension to the whole array of existing diagnostics for laser beams, plasma waves, and electron beams. With this method the details of the underlying physical processes in laser-plasma interactions can be resolved and compared directly to particle-in-cell simulations

Identification of nonvolatile compounds in clove (Syzygium aromaticum) from Manado

Science.gov (United States)

Fathoni, A.; Saepudin, E.; Cahyana, A. H.; Rahayu, D. U. C.; Haib, J.

2017-07-01

Syzygium aromaticum (clove) are native to Indonesia and have been widely used in food industry due to their flavor. Nonvolatile compounds contribute to flavor, mainly in their taste. Currently, there is very little information available about nonvolatile compounds in clove. Identification of nonvolatile compounds is important to improve clove's value. Compound extraction was conducted by maceration in ethanol. Fractionations of the extract were performed by using gravity column chromatography on silica gel and Sephadex LH-20 as stationary phase. Nonvolatile compounds were identified by Liquid Chromatography-Tandem Mass Spectrometry (LC-MS/MS). LC-MS/MS was operated in negative mode with 0.1 % formic acid in water and acetonitrile as mobile phase. Nonvolatile compounds were identified by fragment analysis and compared to references. Several compounds had been identified and characterized asquinic acid, monogalloylglucose, gallic acid, digalloylglucose, isobiflorin, biflorin, ellagic acid, hydroxygallic acid, luteolin, quercetin, naringenin, kaempferol, isorhamnetin, dimethoxyluteolin, and rhamnetin. These compounds had two main flavor perceptions, i.e. astringent, and bitter.

Penetration length-dependent hot electrons in the field emission from ZnO nanowires

Science.gov (United States)

Chen, Yicong; Song, Xiaomeng; Li, Zhibing; She, Juncong; Deng, Shaozhi; Xu, Ningsheng; Chen, Jun

2018-01-01

In the framework of field emission, whether or not hot electrons can form in the semiconductor emitters under a surface penetration field is of great concern, which will provide not only a comprehensive physical picture of field emission from semiconductor but also guidance on how to improve device performance. However, apart from some theoretical work, its experimental evidence has not been reported yet. In this article, the field penetration length-dependent hot electrons were observed in the field emission of ZnO nanowires through the in-situ study of its electrical and field emission characteristic before and after NH3 plasma treatment in an ultrahigh vacuum system. After the treatment, most of the nanowires have an increased carrier density but reduced field emission current. The raised carrier density was caused by the increased content of oxygen vacancies, while the degraded field emission current was attributed to the lower kinetic energy of hot electrons caused by the shorter penetration length. All of these results suggest that the field emission properties of ZnO nanowires can be optimized by modifying their carrier density to balance both the kinetic energy of field induced hot electrons and the limitation of saturated current under a given field.

Ignition conditions relaxation for central hot-spot ignition with an ion-electron non-equilibrium model

Science.gov (United States)

Fan, Zhengfeng; Liu, Jie

2016-10-01

We present an ion-electron non-equilibrium model, in which the hot-spot ion temperature is higher than its electron temperature so that the hot-spot nuclear reactions are enhanced while energy leaks are considerably reduced. Theoretical analysis shows that the ignition region would be significantly enlarged in the hot-spot rhoR-T space as compared with the commonly used equilibrium model. Simulations show that shocks could be utilized to create and maintain non-equilibrium conditions within the hot spot, and the hot-spot rhoR requirement is remarkably reduced for achieving self-heating. In NIF high-foot implosions, it is observed that the x-ray enhancement factors are less than unity, which is not self-consistent and is caused by assuming Te =Ti. And from this non-consistency, we could infer that ion-electron non-equilibrium exists in the high-foot implosions and the ion temperature could be 9% larger than the equilibrium temperature.

Hot Carrier Generation and Extraction of Plasmonic Alloy Nanoparticles.

Science.gov (United States)

Valenti, Marco; Venugopal, Anirudh; Tordera, Daniel; Jonsson, Magnus P; Biskos, George; Schmidt-Ott, Andreas; Smith, Wilson A

2017-05-17

The conversion of light to electrical and chemical energy has the potential to provide meaningful advances to many aspects of daily life, including the production of energy, water purification, and optical sensing. Recently, plasmonic nanoparticles (PNPs) have been increasingly used in artificial photosynthesis (e.g., water splitting) devices in order to extend the visible light utilization of semiconductors to light energies below their band gap. These nanoparticles absorb light and produce hot electrons and holes that can drive artificial photosynthesis reactions. For n-type semiconductor photoanodes decorated with PNPs, hot charge carriers are separated by a process called hot electron injection (HEI), where hot electrons with sufficient energy are transferred to the conduction band of the semiconductor. An important parameter that affects the HEI efficiency is the nanoparticle composition, since the hot electron energy is sensitive to the electronic band structure of the metal. Alloy PNPs are of particular importance for semiconductor/PNPs composites, because by changing the alloy composition their absorption spectra can be tuned to accurately extend the light absorption of the semiconductor. This work experimentally compares the HEI efficiency from Ag, Au, and Ag/Au alloy nanoparticles to TiO 2 photoanodes for the photoproduction of hydrogen. Alloy PNPs not only exhibit tunable absorption but can also improve the stability and electronic and catalytic properties of the pure metal PNPs. In this work, we find that the Ag/Au alloy PNPs extend the stability of Ag in water to larger applied potentials while, at the same time, increasing the interband threshold energy of Au. This increasing of the interband energy of Au suppresses the visible-light-induced interband excitations, favoring intraband excitations that result in higher hot electron energies and HEI efficiencies.

Hot-electrons-induced ultrafast demagnitization in Co/Pt multilayers

NARCIS (Netherlands)

Bergeard, N.; Hehn, M.; Mangin, S.; Lengaigne, G.; Montaigne, F.; Lalieu, M. L. M.; Koopmans, B.; Malinowski, G.

2016-01-01

Using specially engineered structures to tailor the optical absorption in a metallic multilayer, we analyze the magnetization dynamics of a Co/Pt multilayer buried below a thick Cu layer. We demonstrate that hot electrons alone can very efficiently induce ultrafast demagnetization. Simulations based

Performance Enhancement of Organic Light-Emitting Diodes Using Electron-Injection Materials of Metal Carbonates

Science.gov (United States)

Shin, Jong-Yeol; Kim, Tae Wan; Kim, Gwi-Yeol; Lee, Su-Min; Shrestha, Bhanu; Hong, Jin-Woong

2016-05-01

Performance of organic light-emitting diodes was investigated depending on the electron-injection materials of metal carbonates (Li2CO3 and Cs2CO3 ); and number of layers. In order to improve the device efficiency, two types of devices were manufactured by using the hole-injection material (Teflon-amorphous fluoropolymer -AF) and electron-injection materials; one is a two-layer reference device ( ITO/Teflon-AF/Alq3/Al ) and the other is a three-layer device (ITO/Teflon-AF/Alq3/metal carbonate/Al). From the results of the efficiency for the devices with hole-injection layer and electron-injection layer, it was found that the electron-injection layer affects the electrical properties of the device more than the hole-injection layer. The external-quantum efficiency for the three-layer device with Li2CO3 and Cs2CO3 layer is improved by approximately six and eight times, respectively, compared with that of the two-layer reference device. It is thought that a use of electron-injection layer increases recombination rate of charge carriers by the active injection of electrons and the blocking of holes.

Flexible graphene–PZT ferroelectric nonvolatile memory

International Nuclear Information System (INIS)

Lee, Wonho; Ahn, Jong-Hyun; Kahya, Orhan; Toh, Chee Tat; Özyilmaz, Barbaros

2013-01-01

We report the fabrication of a flexible graphene-based nonvolatile memory device using Pb(Zr 0.35 ,Ti 0.65 )O 3 (PZT) as the ferroelectric material. The graphene and PZT ferroelectric layers were deposited using chemical vapor deposition and sol–gel methods, respectively. Such PZT films show a high remnant polarization (P r ) of 30 μC cm −2 and a coercive voltage (V c ) of 3.5 V under a voltage loop over ±11 V. The graphene–PZT ferroelectric nonvolatile memory on a plastic substrate displayed an on/off current ratio of 6.7, a memory window of 6 V and reliable operation. In addition, the device showed one order of magnitude lower operation voltage range than organic-based ferroelectric nonvolatile memory after removing the anti-ferroelectric behavior incorporating an electrolyte solution. The devices showed robust operation in bent states of bending radii up to 9 mm and in cycling tests of 200 times. The devices exhibited remarkable mechanical properties and were readily integrated with plastic substrates for the production of flexible circuits. (paper)

Flexible graphene-PZT ferroelectric nonvolatile memory.

Science.gov (United States)

Lee, Wonho; Kahya, Orhan; Toh, Chee Tat; Ozyilmaz, Barbaros; Ahn, Jong-Hyun

2013-11-29

We report the fabrication of a flexible graphene-based nonvolatile memory device using Pb(Zr0.35,Ti0.65)O3 (PZT) as the ferroelectric material. The graphene and PZT ferroelectric layers were deposited using chemical vapor deposition and sol–gel methods, respectively. Such PZT films show a high remnant polarization (Pr) of 30 μC cm−2 and a coercive voltage (Vc) of 3.5 V under a voltage loop over ±11 V. The graphene–PZT ferroelectric nonvolatile memory on a plastic substrate displayed an on/off current ratio of 6.7, a memory window of 6 V and reliable operation. In addition, the device showed one order of magnitude lower operation voltage range than organic-based ferroelectric nonvolatile memory after removing the anti-ferroelectric behavior incorporating an electrolyte solution. The devices showed robust operation in bent states of bending radii up to 9 mm and in cycling tests of 200 times. The devices exhibited remarkable mechanical properties and were readily integrated with plastic substrates for the production of flexible circuits.

Control of electron injection and acceleration in laser-wakefield accelerators

International Nuclear Information System (INIS)

Guillaume, E.

2015-01-01

Laser-plasma accelerators provide a promising compact alternative to conventional accelerators. Plasma waves with extremely strong electric fields are generated when a high intensity laser is focused into an underdense gas target. Electrons that are trapped in these laser-driven plasma waves can be accelerated up to energies of a few GeVs. Despite their great potential, laser-wakefield accelerators face some issues, regarding notably the stability and reproducibility of the beam when electrons are injected in the accelerating structure. In this manuscript, different techniques of electron injection are presented and compared, notably injection in a sharp density gradient and ionization injection. It is shown that combining these two methods allows for the generation of stable and tunable electron beams. We have also studied a way to manipulate the electron bunch in the phase-space in order to accelerate the bunch beyond the dephasing limit. Such a technique was used with quasi-monoenergetic electron beams to enhance their energy. Moreover, the origin of the evolution of the angular momentum of electrons observed experimentally was investigated. Finally, we demonstrated experimentally a new method - the laser-plasma lens - to strongly reduce the divergence of the electron beam. This laser-plasma lens consists of a second gas jet placed at the exit of the accelerator. The laser pulse drives a wakefield in this second jet whose focusing forces take advantage to reduce the divergence of the trailing electron bunch. A simple analytical model describing the principle is presented, underlining the major importance of the second jet length, density and distance from the first jet. Experimental demonstration of the laser-plasma lens shows a divergence reduction by a factor of 2.6 for electrons up to 300 MeV, in accordance with the model predictions

New electron beam facility for irradiated plasma facing materials testing in hot cell

International Nuclear Information System (INIS)

Sakamoto, N.; Kawamura, H.; Akiba, M.

1995-01-01

Since plasma facing components such as the first wall and the divertor for the next step fusion reactors are exposed to high heat loads and high energy neutron flux generated by the plasma, it is urgent to develop of plasma facing components which can resist these. Then, we have established electron beam heat facility (open-quotes OHBISclose quotes, Oarai Hot-cell electron Beam Irradiating System) at a hot cell in JMTR (Japan Materials Testing Reactor) hot laboratory in order to estimate thermal shock resistivity of plasma facing materials and heat removal capabilities of divertor elements under steady state heating. In this facility, irradiated plasma facing materials (beryllium, carbon based materials and so on) and divertor elements can be treated. This facility consists of an electron beam unit with the maximum beam power of 50kW and the vacuum vessel. The acceleration voltage and the maximum beam current are 30kV (constant) and 1.7A, respectively. The loading time of electron beam is more than 0.1ms. The shape of vacuum vessel is cylindrical, and the mainly dimensions are 500mm in inner diameter, 1000mm in height. The ultimate vacuum of this vessel is 1 x 10 -4 Pa. At present, the facility for thermal shock test has been established in a hot cell. And performance estimation on the electron beam is being conducted. Presently, the devices for heat loading tests under steady state will be added to this facility

New electron beam facility for irradiated plasma facing materials testing in hot cell

International Nuclear Information System (INIS)

Shimakawa, S.; Akiba, M.; Kawamura, H.

1996-01-01

Since plasma facing components such as the first wall and the divertor for the next step fusion reactors are exposed to high heat loads and high energy neutron flux generated by the plasma, it is urgent to develop plasma facing components which can resist these. We have established electron beam heat facility ('OHBIS', Oarai hot-cell electron beam irradiating system) at a hot cell in JMTR (Japan materials testing reactor) hot laboratory in order to estimate thermal shock resistivity of plasma facing materials and heat removal capabilities of divertor elements under steady state heating. In this facility, irradiated plasma facing materials (beryllium, carbon based materials and so on) and divertor elements can be treated. This facility consists of an electron beam unit with the maximum beam power of 50 kW and the vacuum vessel. The acceleration voltage and the maximum beam current are 30 kV (constant) and 1.7 A, respectively. The loading time of the electron beam is more than 0.1 ms. The shape of vacuum vessel is cylindrical, and the main dimensions are 500 mm in inside diameter, 1000 mm in height. The ultimate vacuum of this vessel is 1 x 10 -4 Pa. At present, the facility for the thermal shock test has been established in a hot cell. The performance of the electron beam is being evaluated at this time. In the future, the equipment for conducting static heat loadings will be incorporated into the facility. (orig.)

CURRENT SHEET REGULATION OF SOLAR NEAR-RELATIVISTIC ELECTRON INJECTION HISTORIES

Energy Technology Data Exchange (ETDEWEB)

Agueda, N.; Sanahuja, B. [Departament d' Astronomia i Meteorologia, Institut de Ciencies del Cosmos, Universitat de Barcelona (Spain); Vainio, R. [Department of Physics, University of Helsinki (Finland); Dalla, S. [Jeremiah Horrocks Institute, University of Central Lancashire (United Kingdom); Lario, D. [Applied Physics Laboratory, Johns Hopkins University (United States)

2013-03-10

We present a sample of three large near-relativistic (>50 keV) electron events observed in 2001 by both the ACE and the Ulysses spacecraft, when Ulysses was at high-northern latitudes (>60 Degree-Sign ) and close to 2 AU. Despite the large latitudinal distance between the two spacecraft, electrons injected near the Sun reached both heliospheric locations. All three events were associated with large solar flares, strong decametric type II radio bursts and accompanied by wide (>212 Degree-Sign ) and fast (>1400 km s{sup -1}) coronal mass ejections (CMEs). We use advanced interplanetary transport simulations and make use of the directional intensities observed in situ by the spacecraft to infer the electron injection profile close to the Sun and the interplanetary transport conditions at both low and high latitudes. For the three selected events, we find similar interplanetary transport conditions at different heliolatitudes for a given event, with values of the mean free path ranging from 0.04 AU to 0.27 AU. We find differences in the injection profiles inferred for each spacecraft. We investigate the role that sector boundaries of the heliospheric current sheet (HCS) have on determining the characteristics of the electron injection profiles. Extended injection profiles, associated with coronal shocks, are found if the magnetic footpoints of the spacecraft lay in the same magnetic sector as the associated flare, while intermittent sparse injection episodes appear when the spacecraft footpoints are in the opposite sector or a wrap in the HCS bounded the CME structure.

Energetic Electron Acceleration, Injection, and Transport in Mercury's Magnetosphere

Science.gov (United States)

Dewey, R. M.; Slavin, J. A.; Raines, J. M.; Baker, D. N.; Lawrence, D. J.

2018-05-01

Electrons are accelerated in Mercury’s magnetotail by dipolarization events, flux ropes, and magnetic reconnection directly. Following energization, these electrons are injected close to Mercury where they drift eastward in Shabansky-like orbits.

Electron injection in diodes with field emission

International Nuclear Information System (INIS)

Denavit, J.; Strobel, G.L.

1986-01-01

This paper presents self-consistent steady-state solutions of the space charge, transmitted current, and return currents in diodes with electron injection from the cathode and unlimited field emission of electrons and ions from both electrodes. Time-dependent particle simulations of the diode operation confirm the analytical results and show how these steady states are reached. The results are applicable to thermionic diodes and to photodiodes

An analysis of the SCEX 3 ionospheric electron beam injection experiment

International Nuclear Information System (INIS)

Goerke, R.T.

1992-01-01

The SCEX 3 experiment (Several Compatible EXperiments using a rocket-borne accelerator) was carried to ionospheric altitudes (375 km) by a Black Brant 11 rocket on February 1, 1990. The experiment was launched from Poker Flat Research Range (65.1 degree N, 147.5 degree W) at 1207 UT. The payload split into two parts (hereafter forward and aft payloads) 116 seconds after launch. The aft payload carried two electron accelerators as well as several diagnostic instruments. The forward payload was ejected at an angle of 6 degree with the magnetic field in a northwesterly direction. This payload carried a multiband plasma wave receiver and various particle detectors to make in situ measurements of the Beam Plasma Interaction (BPI) region. Two Throw Away Detectors (TAD's 1 and 2) were also ejected from the aft payload in the east and west directions respectively. TAD 1 also carried a multiband plasma wave receiver. Preceding the launch an auroral arch along the southern boundary of a diffuse auroral patch suddenly brightened, split into two separate arcs and moved to a position north of the rocket's trajectory. SCEX 3 was launched into an active breakup aurora consisting of tall rays and diffuse patches. The purpose of this experiment were (1) to observe injected electrons reflected from the naturally occurring parallel electric field structures which are thought to accelerate the auroral electron, (2) to observe a variety of plasma effects caused by the artificial electron beam and the associated spacecraft charging, and (3) study the natural phenomena associated with auroral activity. This work is a summary of the interesting observations made by the SCEX 3 experiment. These observations include VHF emissions produced by the electron beam via the Beam Plasma Discharge (BPD), Diffuse resonance emissions by the hot plasma region surrounding the electron beam and auroral Z-mode emissions

Ultrafast Hot Electron Induced Phase Transitions in Vanadium Dioxide

Directory of Open Access Journals (Sweden)

Haglund R. F.

2013-03-01

Full Text Available The Au/Cr/VO2/Si system was investigated in pump–probe experiments. Hot-electrons generated in the Au were found to penetrate into the underlying VO2 and couple with its lattice inducing a semiconductor-to-metal phase transition in ~2 picoseconds.

Semiconductor-Free Nonvolatile Resistive Switching Memory Devices Based on Metal Nanogaps Fabricated on Flexible Substrates via Adhesion Lithography

KAUST Repository

Semple, James; Wyatt-Moon, Gwenhivir; Georgiadou, Dimitra G.; McLachlan, Martyn A.; Anthopoulos, Thomas D.

2017-01-01

Electronic memory cells are of critical importance in modern-day computing devices, including emerging technology sectors such as large-area printed electronics. One technology that has being receiving significant interest in recent years is resistive switching primarily due to its low dimensionality and nonvolatility. Here, we describe the development of resistive switching memory device arrays based on empty aluminum nanogap electrodes. By employing adhesion lithography, a low-temperature and large-area compatible nanogap fabrication technique, dense arrays of memory devices are demonstrated on both rigid and flexible plastic substrates. As-prepared devices exhibit nonvolatile memory operation with stable endurance, resistance ratios >10⁴ and retention times of several months. An intermittent analysis of the electrode microstructure reveals that controlled resistive switching is due to migration of metal from the electrodes into the nanogap under the application of an external electric field. This alternative form of resistive random access memory is promising for use in emerging sectors such as large-area electronics as well as in electronics for harsh environments, e.g., space, high/low temperature, magnetic influences, radiation, vibration, and pressure.

Semiconductor-Free Nonvolatile Resistive Switching Memory Devices Based on Metal Nanogaps Fabricated on Flexible Substrates via Adhesion Lithography

KAUST Repository

Semple, James

2017-01-02

Electronic memory cells are of critical importance in modern-day computing devices, including emerging technology sectors such as large-area printed electronics. One technology that has being receiving significant interest in recent years is resistive switching primarily due to its low dimensionality and nonvolatility. Here, we describe the development of resistive switching memory device arrays based on empty aluminum nanogap electrodes. By employing adhesion lithography, a low-temperature and large-area compatible nanogap fabrication technique, dense arrays of memory devices are demonstrated on both rigid and flexible plastic substrates. As-prepared devices exhibit nonvolatile memory operation with stable endurance, resistance ratios >10⁴ and retention times of several months. An intermittent analysis of the electrode microstructure reveals that controlled resistive switching is due to migration of metal from the electrodes into the nanogap under the application of an external electric field. This alternative form of resistive random access memory is promising for use in emerging sectors such as large-area electronics as well as in electronics for harsh environments, e.g., space, high/low temperature, magnetic influences, radiation, vibration, and pressure.

Nonvolatile Memory Technology for Space Applications

Science.gov (United States)

Oldham, Timothy R.; Irom, Farokh; Friendlich, Mark; Nguyen, Duc; Kim, Hak; Berg, Melanie; LaBel, Kenneth A.

2010-01-01

This slide presentation reviews several forms of nonvolatile memory for use in space applications. The intent is to: (1) Determine inherent radiation tolerance and sensitivities, (2) Identify challenges for future radiation hardening efforts, (3) Investigate new failure modes and effects, and technology modeling programs. Testing includes total dose, single event (proton, laser, heavy ion), and proton damage (where appropriate). Test vehicles are expected to be a variety of non-volatile memory devices as available including Flash (NAND and NOR), Charge Trap, Nanocrystal Flash, Magnetic Memory (MRAM), Phase Change--Chalcogenide, (CRAM), Ferroelectric (FRAM), CNT, and Resistive RAM.

Electron injection from graphene quantum dots to poly(amido amine) dendrimers

Energy Technology Data Exchange (ETDEWEB)

Lin, T. N.; Inciong, M. R.; Santiago, S. R.; Shu, G. W.; Yuan, C. T.; Shen, J. L., E-mail: jlshen@cycu.edu.tw [Department of Physics, Center for Nanotechnology, and Center for Biomedical Technology, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China); Kao, C. W. [Master Program in Nanotechnology at CYCU, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China); Yeh, J. M.; Chen-Yang, Y. W. [Department of Chemistry, Center for Nanotechnology, and Center for Biomedical Technology, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China)

2016-04-18

The steady-state and time-resolved photoluminescence (PL) are used to study the electron injection from graphene quantum dots (GQDs) to poly(amido amine) (PAMAM) dendrimers. The PL is enhanced by depositing GQDs on the surfaces of the PAMAM dendrimers. The maximum enhancement of PL with a factor of 10.9 is achieved at a GQD concentration of 0.9 mg/ml. The dynamics of PL in the GQD/PAMAM composite are analyzed, evidencing the existence of electron injection. On the basis of Kelvin probe measurements, the electron injection from the GQDs to the PAMAM dendrimers is accounted for by the work function difference between them.

Nonvolatile “AND,” “OR,” and “NOT” Boolean logic gates based on phase-change memory

Energy Technology Data Exchange (ETDEWEB)

Li, Y.; Zhong, Y. P.; Deng, Y. F.; Zhou, Y. X.; Xu, L.; Miao, X. S., E-mail: miaoxs@mail.hust.edu.cn [Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074 (China); School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China)

2013-12-21

Electronic devices or circuits that can implement both logic and memory functions are regarded as the building blocks for future massive parallel computing beyond von Neumann architecture. Here we proposed phase-change memory (PCM)-based nonvolatile logic gates capable of AND, OR, and NOT Boolean logic operations verified in SPICE simulations and circuit experiments. The logic operations are parallel computing and results can be stored directly in the states of the logic gates, facilitating the combination of computing and memory in the same circuit. These results are encouraging for ultralow-power and high-speed nonvolatile logic circuit design based on novel memory devices.

Nonvolatile “AND,” “OR,” and “NOT” Boolean logic gates based on phase-change memory

International Nuclear Information System (INIS)

Li, Y.; Zhong, Y. P.; Deng, Y. F.; Zhou, Y. X.; Xu, L.; Miao, X. S.

2013-01-01

Electronic devices or circuits that can implement both logic and memory functions are regarded as the building blocks for future massive parallel computing beyond von Neumann architecture. Here we proposed phase-change memory (PCM)-based nonvolatile logic gates capable of AND, OR, and NOT Boolean logic operations verified in SPICE simulations and circuit experiments. The logic operations are parallel computing and results can be stored directly in the states of the logic gates, facilitating the combination of computing and memory in the same circuit. These results are encouraging for ultralow-power and high-speed nonvolatile logic circuit design based on novel memory devices

Towards hot electron mediated charge exchange in hyperthermal energy ion-surface interactions

DEFF Research Database (Denmark)

Ray, M. P.; Lake, R. E.; Thomsen, Lasse Bjørchmar

2010-01-01

shows that the primary energy loss mechanism is the atomic displacement of Au atoms in the thin film of the metal–oxide–semiconductor device. We propose that neutral particle detection of the scattered flux from a biased device could be a route to hot electron mediated charge exchange.......We have made Na + and He + ions incident on the surface of solid state tunnel junctions and measured the energy loss due to atomic displacement and electronic excitations. Each tunnel junction consists of an ultrathin film metal–oxide–semiconductor device which can be biased to create a band of hot...

Negative effect of Au nanoparticles on an IGZO TFT-based nonvolatile memory device

Energy Technology Data Exchange (ETDEWEB)

Lim, Myunghoon; Yoo, Gwangwe; Lee, Jongtaek; Jeong, Seokwon; Roh, Yonghan; Park, Jinhong; Kwon, Namyong [Sungkyunkwan University, Suwon (Korea, Republic of); Jung, Wooshik [Stanford University, Stanford, CA (United States)

2014-02-15

In this letter, the electrical characteristics of nonvolatile memory devices based on back gate type indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) are investigated in terms of the Au nanoparticles (NPs) employed in the floating gate-stack of the device. The size of the Au NPs is controlled using a by 500 .deg. C annealing process after the Au thin-film deposition. The size and the roughness of the Au NPs were observed by using scanning electron microscopy, atomic force microscopy, and transmission electron microscopy. In order to analyze the electrical properties according to Au NP size, we measured the current-voltage (I{sub D}-V{sub G}) characteristics of the nonvolatile memory devices fabricated without Au NPs and with Au NPs of various sizes. The size of the Au NP increased, so did the surface roughness of the gate. This resulted in increased carrier scattering, which subsequently degraded the on-current of the memory device. In addition, inter-diffusion between the Au and the α-IGZO through the non-uniform Al{sub 2}O{sub 3} tunneling layer seemed to further degrade the device performance.

Ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory

International Nuclear Information System (INIS)

Han, Jinhua; Wang, Wei; Ying, Jun; Xie, Wenfa

2014-01-01

An ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory was demonstrated, with discrete distributed gold nanoparticles, tetratetracontane (TTC), pentacene as the floating-gate layer, tunneling layer, and active layer, respectively. The electron traps at the TTC/pentacene interface were significantly suppressed, which resulted in an ambipolar operation in present memory. As both electrons and holes were supplied in the channel and trapped in the floating-gate by programming/erasing operations, respectively, i.e., one type of charge carriers was used to overwrite the other, trapped, one, a large memory window, extending on both sides of the initial threshold voltage, was realized

Ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory

Energy Technology Data Exchange (ETDEWEB)

Han, Jinhua; Wang, Wei, E-mail: wwei99@jlu.edu.cn; Ying, Jun; Xie, Wenfa [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012 (China)

2014-01-06

An ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory was demonstrated, with discrete distributed gold nanoparticles, tetratetracontane (TTC), pentacene as the floating-gate layer, tunneling layer, and active layer, respectively. The electron traps at the TTC/pentacene interface were significantly suppressed, which resulted in an ambipolar operation in present memory. As both electrons and holes were supplied in the channel and trapped in the floating-gate by programming/erasing operations, respectively, i.e., one type of charge carriers was used to overwrite the other, trapped, one, a large memory window, extending on both sides of the initial threshold voltage, was realized.

Ion acoustic solitons and supersolitons in a magnetized plasma with nonthermal hot electrons and Boltzmann cool electrons

Energy Technology Data Exchange (ETDEWEB)

Rufai, O. R., E-mail: rajirufai@gmail.com; Bharuthram, R., E-mail: rbharuthram@uwc.ac.za [University of the Western Cape, Belville (South Africa); Singh, S. V., E-mail: satyavir@iigs.iigm.res.in; Lakhina, G. S., E-mail: lakhina@iigs.iigm.res.in [Indian Institute of Geomagnetism, New Panvel (W), Navi Mumbai (India)

2014-08-15

Arbitrary amplitude, ion acoustic solitons, and supersolitons are studied in a magnetized plasma with two distinct groups of electrons at different temperatures. The plasma consists of a cold ion fluid, cool Boltzmann electrons, and nonthermal energetic hot electrons. Using the Sagdeev pseudo-potential technique, the effect of nonthermal hot electrons on soliton structures with other plasma parameters is studied. Our numerical computation shows that negative potential ion-acoustic solitons and double layers can exist both in the subsonic and supersonic Mach number regimes, unlike the case of an unmagnetized plasma where they can only exist in the supersonic Mach number regime. For the first time, it is reported here that in addition to solitions and double layers, the ion-acoustic supersoliton solutions are also obtained for certain range of parameters in a magnetized three-component plasma model. The results show good agreement with Viking satellite observations of the solitary structures with density depletions in the auroral region of the Earth's magnetosphere.

Use of non-volatile memories for SSC detector readout

International Nuclear Information System (INIS)

Fennelly, A.J.; Woosley, J.K.; Johnson, M.B.

1990-01-01

Use of non-volatile memory units at the end of each fiber optic bunch/strand would substantially increase information available from experiments by providing a complete event history, in addition to easing real time processing requirements. This may be an alternative to enhancing technology to optical computing techniques. Available and low-risk projected technologies will be surveyed, with costing addressed. Some discussion will be given to covnersion of optical signals, to electronic information, concepts for providing timing pulses to the memory units, and to the magnetoresistive (MRAM) and ferroelectric (FERAM) random access memory technologies that may be utilized in the prototype system

Injection of an electron beam into a plasma and spacecraft charging

International Nuclear Information System (INIS)

Okuda, H.; Kan, J.R.

1987-01-01

Injection of a nonrelativistic electron beam into a fully ionized plasma from a spacecraft including the effect of charging has been studied using a one-dimensional particle simulation model. It is found that the spacecraft charging remains negligible and the beam can propagate into a plasma, if the beam density is much smaller than the ambient density. When the injection current is increased by increasing the beam density, significant spacecraft charging takes place and the reflection of beam electrons back to the spacecraft reduces the beam current significantly. On the other hand, if the injection current is increased by increasing the beam energy, spacecraft charging remains negligible and a beam current much larger than the thermal return current can be injected. It is shown that the electric field caused by the beam--plasma instability accelerates the ambient electrons toward the spacecraft thereby enhancing the return current

Diffusion-Cooled Tantalum Hot-Electron Bolometer Mixers

Science.gov (United States)

Skalare, Anders; McGrath, William; Bumble, Bruce; LeDuc, Henry

2004-01-01

A batch of experimental diffusion-cooled hot-electron bolometers (HEBs), suitable for use as mixers having input frequencies in the terahertz range and output frequencies up to about a gigahertz, exploit the superconducting/normal-conducting transition in a thin strip of tantalum. The design and operation of these HEB mixers are based on mostly the same principles as those of a prior HEB mixer that exploited the superconducting/normal- conducting transition in a thin strip of niobium and that was described elsewhere.

Syringe-Injectable Electronics with a Plug-and-Play Input/Output Interface.

Science.gov (United States)

Schuhmann, Thomas G; Yao, Jun; Hong, Guosong; Fu, Tian-Ming; Lieber, Charles M

2017-09-13

Syringe-injectable mesh electronics represent a new paradigm for brain science and neural prosthetics by virtue of the stable seamless integration of the electronics with neural tissues, a consequence of the macroporous mesh electronics structure with all size features similar to or less than individual neurons and tissue-like flexibility. These same properties, however, make input/output (I/O) connection to measurement electronics challenging, and work to-date has required methods that could be difficult to implement by the life sciences community. Here we present a new syringe-injectable mesh electronics design with plug-and-play I/O interfacing that is rapid, scalable, and user-friendly to nonexperts. The basic design tapers the ultraflexible mesh electronics to a narrow stem that routes all of the device/electrode interconnects to I/O pads that are inserted into a standard zero insertion force (ZIF) connector. Studies show that the entire plug-and-play mesh electronics can be delivered through capillary needles with precise targeting using microliter-scale injection volumes similar to the standard mesh electronics design. Electrical characterization of mesh electronics containing platinum (Pt) electrodes and silicon (Si) nanowire field-effect transistors (NW-FETs) demonstrates the ability to interface arbitrary devices with a contact resistance of only 3 Ω. Finally, in vivo injection into mice required only minutes for I/O connection and yielded expected local field potential (LFP) recordings from a compact head-stage compatible with chronic studies. Our results substantially lower barriers for use by new investigators and open the door for increasingly sophisticated and multifunctional mesh electronics designs for both basic and translational studies.

Strain-controlled nonvolatile magnetization switching

Science.gov (United States)

Geprägs, S.; Brandlmaier, A.; Brandt, M. S.; Gross, R.; Goennenwein, S. T. B.

2014-11-01

We investigate different approaches towards a nonvolatile switching of the remanent magnetization in single-crystalline ferromagnets at room temperature via elastic strain using ferromagnetic thin film/piezoelectric actuator hybrids. The piezoelectric actuator induces a voltage-controllable strain along different crystalline directions of the ferromagnetic thin film, resulting in modifications of its magnetization by converse magnetoelastic effects. We quantify the magnetization changes in the hybrids via ferromagnetic resonance spectroscopy and superconducting quantum interference device magnetometry. These measurements demonstrate a significant strain-induced change of the magnetization, limited by an inefficient strain transfer and domain formation in the particular system studied. To overcome these obstacles, we address practicable engineering concepts and use a model to demonstrate that a strain-controlled, nonvolatile magnetization switching should be possible in appropriately engineered ferromagnetic/piezoelectric actuator hybrids.

Quantum noise in a terahertz hot electron bolometer mixer

NARCIS (Netherlands)

Zhang, W.; Khosropanah, P.; Gao, J. R.; Kollberg, E. L.; Yngvesson, K. S.; Bansal, T.; Barends, R.; Klapwijk, T. M.

2010-01-01

We have measured the noise temperature of a single, sensitive superconducting NbN hot electron bolometer (HEB) mixer in a frequency range from 1.6 to 5.3 THz, using a setup with all the key components in vacuum. By analyzing the measured receiver noise temperature using a quantum noise (QN) model

Generation and Beaming of Early Hot Electrons onto the Capsule in Laser-Driven Ignition Hohlraums

Science.gov (United States)

Dewald, E. L.; Hartemann, F.; Michel, P.; Milovich, J.; Hohenberger, M.; Pak, A.; Landen, O. L.; Divol, L.; Robey, H. F.; Hurricane, O. A.; Döppner, T.; Albert, F.; Bachmann, B.; Meezan, N. B.; MacKinnon, A. J.; Callahan, D.; Edwards, M. J.

2016-02-01

In hohlraums for inertial confinement fusion (ICF) implosions on the National Ignition Facility, suprathermal hot electrons, generated by laser plasma instabilities early in the laser pulse ("picket") while blowing down the laser entrance hole (LEH) windows, can preheat the capsule fuel. Hard x-ray imaging of a Bi capsule surrogate and of the hohlraum emissions, in conjunction with the measurement of time-resolved bremsstrahlung spectra, allows us to uncover for the first time the directionality of these hot electrons and infer the capsule preheat. Data and Monte Carlo calculations indicate that for most experiments the hot electrons are emitted nearly isotropically from the LEH. However, we have found cases where a significant fraction of the generated electrons are emitted in a collimated beam directly towards the capsule poles, where their local energy deposition is up to 10 × higher than the average preheat value and acceptable levels for ICF implosions. The observed "beaming" is consistent with a recently unveiled multibeam stimulated Raman scattering model [P. Michel et al., Phys. Rev. Lett. 115, 055003 (2015)], where laser beams in a cone drive a common plasma wave on axis. Finally, we demonstrate that we can control the amount of generated hot electrons by changing the laser pulse shape and hohlraum plasma.

Experimental studies on the production and suppression mechanism of the hot electrons produced by short wavelength laser

International Nuclear Information System (INIS)

Qi Lanying; Jiang Xiaohua; Zhao Xuewei; Li Sanwei; Zhang Wenhai; Li Chaoguang; Zheng Zhijian; Ding Yongkun

1999-12-01

The experiments on gold-disk and hohlraum and plastic hydrocarbon (CH) film targets irradiated by laser beams with wavelength 0.35 μm (Xingguang-II) and 0.53 μm (Shenguang-I) are performed. The characteristics of hot electrons are commonly deduced from spectrum of hard X-ray. Associated with the measurement of backward SRS and 3/2ω 0 , the production mechanism of hot electrons for different target type is analyzed in laser plasma with shorter wavelength. A effective way to suppress hot electrons has been found

Electron beam injection during active experiments. I - Electromagnetic wave emissions

Science.gov (United States)

Winglee, R. M.; Kellogg, P. J.

1990-01-01

The wave emissions produced in Echo 7 experiment by active injections of electron beams were investigated to determine the properties of the electromagnetic and electrostatic fields for both the field-aligned and cross-field injection in such experiments and to evaluate the sources of free energy and relative efficiencies for the generation of the VLF and HF emissions. It is shown that, for typical beam energies in active experiments, electromagnetic effects do not substantially change the bulk properties of the beam, spacecraft charging, and plasma particle acceleration. Through simulations, beam-generated whistlers; fundamental z-mode and harmonic x-mode radiation; and electrostatic electron-cyclotron, upper-hybrid, Langmuir, and lower-hybrid waves were identified. The characteristics of the observed wave spectra were found to be sensitive to both the ratio of the electron plasma frequency to the cyclotron frequency and the angle of injection relative to the magnetic field.

Origin of Power Laws for Reactions at Metal Surfaces Mediated by Hot Electrons

DEFF Research Database (Denmark)

Olsen, Thomas; Schiøtz, Jakob

2009-01-01

A wide range of experiments have established that certain chemical reactions at metal surfaces can be driven by multiple hot-electron-mediated excitations of adsorbates. A high transient density of hot electrons is obtained by means of femtosecond laser pulses and a characteristic feature of such...... density functional theory and the delta self-consistent field method. With a simplifying assumption, the power law becomes exact and we obtain a simple physical interpretation of the exponent n, which represents the number of adsorbate vibrational states participating in the reaction....

Fast ions and hot electrons in the laser--plasma interaction

International Nuclear Information System (INIS)

Gitomer, S.J.; Jones, R.D.; Begay, F.; Ehler, A.W.; Kephart, J.F.; Kristal, R.

1986-01-01

Data on the emission of energetic ions produced in laser--matter interactions have been analyzed for a wide variety of laser wavelengths, energies, and pulse lengths. Strong correlation has been found between the bulk energy per AMU for fast ions measured by charge cups and the x-ray-determined hot electron temperature. Five theoretical models have been used to explain this correlation. The models include (1) a steady-state spherically symmetric fluid model with classical electron heat conduction, (2) a steady-state spherically symmetric fluid model with flux limited electron heat conduction, (3) a simple analytic model of an isothermal rarefaction followed by a free expansion, (4) the lasneX hydrodynamics code [Comments Plasma Phys. Controlled Fusion 2, 85 (1975)], calculations employing a spherical expansion and simple initial conditions, and (5) the lasneX code with its full array of absorption, transport, and emission physics. The results obtained with these models are in good agreement with the experiments and indicate that the detailed shape of the correlation curve between mean fast ion energy and hot electron temperature is due to target surface impurities at the higher temperatures (higher laser intensities) and to the expansion of bulk target material at the lower temperatures (lower laser intensities)

Synthesis of highly fluorescent hydrophobic carbon dots by hot injection method using Paraplast as precursor

International Nuclear Information System (INIS)

Talib, Abou; Pandey, Sunil; Thakur, Mukeshchand; Wu, Hui-Fen

2015-01-01

We have reported synthesis of bright blue colored hydrophobic carbon dots (hC-dots) using highly pure blend of polymers called Paraplast. We developed a hot injection method for making nearly monodispersed hC-dots with a diameter in a range: 5–30 nm as confirmed by high resolution transmission electron microscopy (HRTEM). The involvement of various functional groups was confirmed by Fourier transform infra-red (FTIR) spectroscopy. These hC-dots were incubated with breast cancer stem cells in order to check the entry as well as biological imaging. The cells were analyzed using epifluorescent microscopy. hC-dots showed concentration dependent cytotoxicity (LD 50 : 50 mg/ml) and could be used for bioimaging even at lower concentration (0.5 mg/ml). hC-dots were found to be versatile agents for peeping inside the cells which could also be used for delivery of water insoluble chemotherapeutic agents to variety of solid tumors. - Highlights: • Synthesis of hydrophobic carbon dots from polymer based Paraplast • Deep blue color under the influence of UV light • Typical optical properties used for biological imaging • Biological imaging of breast cancer stem cells revealing potential of carbon dots

Synthesis of highly fluorescent hydrophobic carbon dots by hot injection method using Paraplast as precursor

Energy Technology Data Exchange (ETDEWEB)

Talib, Abou [Doctoral Degree Program in Marine Biotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan (China); Pandey, Sunil [Department of Chemistry, National Sun Yat-Sen University, 70, Lien-Hai Road, Kaohsiung 80424, Taiwan (China); Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, 70, Lien-Hai Road, Kaohsiung 80424, Taiwan (China); Thakur, Mukeshchand [Department of Chemistry, National Sun Yat-Sen University, 70, Lien-Hai Road, Kaohsiung 80424, Taiwan (China); Wu, Hui-Fen, E-mail: hui@faculty.nsysu.edu.tw [Department of Chemistry, National Sun Yat-Sen University, 70, Lien-Hai Road, Kaohsiung 80424, Taiwan (China); Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, 70, Lien-Hai Road, Kaohsiung 80424, Taiwan (China); Doctoral Degree Program in Marine Biotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan (China); School of Pharmacy, College of Pharmacy, Kaohsiung Medical University, Kaohsiung 800, Taiwan (China); Institute of Medical Science and Technology, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan (China)

2015-03-01

We have reported synthesis of bright blue colored hydrophobic carbon dots (hC-dots) using highly pure blend of polymers called Paraplast. We developed a hot injection method for making nearly monodispersed hC-dots with a diameter in a range: 5–30 nm as confirmed by high resolution transmission electron microscopy (HRTEM). The involvement of various functional groups was confirmed by Fourier transform infra-red (FTIR) spectroscopy. These hC-dots were incubated with breast cancer stem cells in order to check the entry as well as biological imaging. The cells were analyzed using epifluorescent microscopy. hC-dots showed concentration dependent cytotoxicity (LD{sub 50}: 50 mg/ml) and could be used for bioimaging even at lower concentration (0.5 mg/ml). hC-dots were found to be versatile agents for peeping inside the cells which could also be used for delivery of water insoluble chemotherapeutic agents to variety of solid tumors. - Highlights: • Synthesis of hydrophobic carbon dots from polymer based Paraplast • Deep blue color under the influence of UV light • Typical optical properties used for biological imaging • Biological imaging of breast cancer stem cells revealing potential of carbon dots.

Transport effects with hot electrons in laser fusion. Final report, October 1, 1981-February 28, 1983

International Nuclear Information System (INIS)

Shkarofsky, I.P.

1983-02-01

Two explanations are offered which can account for heat inhibition found in laser-fusion experiments. The first explanation requires an anisotorpic electron velocity distribution with a higher temperature parallel to the surface than into the surface. This provides axial heat inhibition. Lateral heat inhibition is associated with azimuthal magnetic fields. The second explanation requires the presence of both hot suprathermal and thermal electrons. The hot electrons can cause the flux limiter to decrease substantially below the free-streaming limit in an intermediate range of collisionality. Conditions for this situation occur in the coronal region. We compare a Maxwellian distribution to an exp(-v 5 /v 5 /sub c/) variation for the cold electrons and find that the flux limiter decreases more for the latter case. The effects of collisions between cold and hot electrons is also looked into. The Cartesian tensor approach is used in the above investigations with various forms for the zeroth order electron velocity distribution function

Going ballistic: Graphene hot electron transistors

Science.gov (United States)

Vaziri, S.; Smith, A. D.; Östling, M.; Lupina, G.; Dabrowski, J.; Lippert, G.; Mehr, W.; Driussi, F.; Venica, S.; Di Lecce, V.; Gnudi, A.; König, M.; Ruhl, G.; Belete, M.; Lemme, M. C.

2015-12-01

This paper reviews the experimental and theoretical state of the art in ballistic hot electron transistors that utilize two-dimensional base contacts made from graphene, i.e. graphene base transistors (GBTs). Early performance predictions that indicated potential for THz operation still hold true today, even with improved models that take non-idealities into account. Experimental results clearly demonstrate the basic functionality, with on/off current switching over several orders of magnitude, but further developments are required to exploit the full potential of the GBT device family. In particular, interfaces between graphene and semiconductors or dielectrics are far from perfect and thus limit experimental device integrity, reliability and performance.

Importance of field-reversing ion ring formation in hot electron plasma

Energy Technology Data Exchange (ETDEWEB)

Ikuta, K.

1975-11-01

Formation of the field reversing ion ring in the mirror confined hot electron plasma may offer a device to confine the fusion plasma even under the restriction of the present technology. (Author) (GRA)

Hot injection synthesis of Cu(In, Ga)Se2 nanocrystals with tunable bandgap

Science.gov (United States)

Latha, M.; Aruna Devi, R.; Velumani, S.

2018-05-01

CuIn1-xGaxSe2 nanocrystals (CIGSe NCs) were synthesized with different gallium (Ga) content by the hot injection process at low reaction temperature for the first time. The Ga content [x = Ga(In + Ga)] was varied such as 0, 0.25, 0.50 and 0.75 to study their influences on the structural, morphological, compositional and optical properties of CIGSe NCs. X-ray diffraction (XRD) analysis showed the peak shift towards higher 2θ angle. The lattice parameters a and c were decreased linearly as x value increases which propitiated Vegard's law. Transmission electron microscopy (TEM) analysis revealed a decrease in the particle size from 55 to 22 nm. Ultraviolet-visible-near infrared (UV-vis-NIR) absorption spectra indicated a blue shift towards the lower wavelength and bandgap was tuned from 1.04 to 1.41eV. Apart from this, CIGSe thin films were prepared by doctor blade coating method followed by annealing under Se/Ar atmosphere. The mobility of CIGSe thin film increased whereas resistivity decreased. Moreover, the photoconductivity of CIGSe annealed thin film exhibited almost 2-fold increase under an illumination of light. We realize from these results that the synthesized CIGSe NCs with x = 0.25 is expected to have the important perspective to be efficiently exploited as an absorber layer in cost-effective thin film solar cells.

Investigation of hot cracking in deep penetration electron beam welds

Energy Technology Data Exchange (ETDEWEB)

Thorvaldson, W.G.

1978-06-10

A defect in a deep penetration electron beam weld of 304L stainless steel to 21-6-9 stainless steel has been identified as a centerline hot crack. The study discussed in this report was made to define and to eliminate the cause of cracking.

Limitation and suppression of hot electron fluctuations in submicron semiconductor structures

International Nuclear Information System (INIS)

Kochelap, V.A.; Zahleniuk, N.A.; Sokolov, V.N.

1992-09-01

We present theoretical investigations of fluctuations of hot electrons in submicron active regions, where the dimensions 2 d of the region is comparable to the electron energy relaxation length L ε . The new physical phenomenon is reported; the fluctuations depend on the sample thickness, with 2d ε a suppression of fluctuations arises in the range of fluctuation frequencies ω much less than T -1 ε , T ε is the electron energy relaxation time. (author). 12 refs, 7 figs

Controlling charge injection in organic electronic devices using self-assembled monolayers

Science.gov (United States)

Campbell, I. H.; Kress, J. D.; Martin, R. L.; Smith, D. L.; Barashkov, N. N.; Ferraris, J. P.

1997-12-01

We demonstrate control and improvement of charge injection in organic electronic devices by utilizing self-assembled monolayers (SAMs) to manipulate the Schottky energy barrier between a metal electrode and the organic electronic material. Hole injection from Cu electrodes into the electroluminescent conjugated polymer poly[2-methoxy,5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene] was varied by using two conjugated-thiol based SAMs. The chemically modified electrodes were incorporated in organic diode structures and changes in the metal/polymer Schottky energy barriers and current-voltage characteristics were measured. Decreasing (increasing) the Schottky energy barrier improves (degrades) charge injection into the polymer.

Transport and Fatigue Properties of Ferroelectric Polymer P(VDF-TrFE) For Nonvolatile Memory Applications

KAUST Repository

Hanna, Amir

2012-06-01

Organic ferroelectrics polymers have recently received much interest for use in nonvolatile memory devices. The ferroelectric copolymer poly(vinylidene fluoride- trifluoroethylene) , P(VDF-TrFE), is a promising candidate due to its relatively high remnant polarization, low coercive field, fast switching times, easy processability, and low Curie transition. However, no detailed study of charge injection and current transport properties in P(VDF-TrFE) have been reported in the literature yet. Charge injection and transport are believed to affect various properties of ferroelectric films such as remnant polarization values and polarization fatigue behavior.. Thus, this thesis aims to study charge injection in P(VDF-TrFE) and its transport properties as a function of electrode material. Injection was studied for Al, Ag, Au and Pt electrodes. Higher work function metals such as Pt have shown less leakage current compared to lower work function metals such as Al for more than an order of magnitude. That implied n-type conduction behavior for P(VDF-TrFE), as well as electrons being the dominant injected carrier type. Charge transport was also studied as a function of temperature, and two major transport regimes were identified: 1) Thermionic emission over a Schottky barrier for low fields (E < 25 MV/m). 2) Space-Charge-Limited regime at higher fields (25 < E <120 MV/m). We have also studied the optical imprint phenomenon, the polarization fatigue resulting from a combination of broad band optical illumination and DC bias near the switching field. A setup was designed for the experiment, and validated by reproducing the reported effect in polycrystalline Pb(Zr,Ti)O3 , PZT, film. On the other hand, P(VDF-TrFE) film showed no polarization fatigue as a result of optical imprint test, which could be attributed to the large band gap of the material, and the low intensity of the UV portion of the arc lamp white light used for the experiment. Results suggest using high work

High-Performance Nonvolatile Organic Field-Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers.

Science.gov (United States)

Li, Wen; Guo, Fengning; Ling, Haifeng; Zhang, Peng; Yi, Mingdong; Wang, Laiyuan; Wu, Dequn; Xie, Linghai; Huang, Wei

2017-08-01

Nonvolatile organic field-effect transistor (OFET) memory devices based on pentacene/ N , N '-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13)/pentacene trilayer organic heterostructures have been proposed. The discontinuous n-type P13 embedded in p-type pentacene layers can not only provide electrons in the semiconductor layer that facilitates electron trapping process; it also works as charge trapping sites, which is attributed to the quantum well-like pentacene/P13/pentacene organic heterostructures. The synergistic effects of charge trapping in the discontinuous P13 and the charge-trapping property of the poly(4-vinylphenol) (PVP) layer remarkably improve the memory performance. In addition, the trilayer organic heterostructures have also been successfully applied to multilevel and flexible nonvolatile memory devices. The results provide a novel design strategy to achieve high-performance nonvolatile OFET memory devices and allow potential applications for different combinations of various organic semiconductor materials in OFET memory.

High‐Performance Nonvolatile Organic Field‐Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers

Science.gov (United States)

Li, Wen; Guo, Fengning; Ling, Haifeng; Zhang, Peng; Wang, Laiyuan; Wu, Dequn

2017-01-01

Nonvolatile organic field‐effect transistor (OFET) memory devices based on pentacene/N,N′‐ditridecylperylene‐3,4,9,10‐tetracarboxylic diimide (P13)/pentacene trilayer organic heterostructures have been proposed. The discontinuous n‐type P13 embedded in p‐type pentacene layers can not only provide electrons in the semiconductor layer that facilitates electron trapping process; it also works as charge trapping sites, which is attributed to the quantum well‐like pentacene/P13/pentacene organic heterostructures. The synergistic effects of charge trapping in the discontinuous P13 and the charge‐trapping property of the poly(4‐vinylphenol) (PVP) layer remarkably improve the memory performance. In addition, the trilayer organic heterostructures have also been successfully applied to multilevel and flexible nonvolatile memory devices. The results provide a novel design strategy to achieve high‐performance nonvolatile OFET memory devices and allow potential applications for different combinations of various organic semiconductor materials in OFET memory. PMID:28852619

Characteristics of post-disruption runaway electrons with impurity pellet injection

International Nuclear Information System (INIS)

Kawano, Yasunori; Nakano, Tomohide; Isayama, Akihiko; Asakura, Nobuyuki; Tamai, Hiroshi; Kubo, Hirotaka; Takenaga, Hidenobu; Bakhtiari, Mohammad; Ide, Shunsuke; Kondoh, Takashi; Hatae, Takaki

2005-01-01

Characteristics of post-disruption runaway electrons with impurity pellet injection were investigated for the first time using the JT-60U tokamak device. A clear deposition of impurity neon ice pellets was observed in a post-disruption runaway plasma. The pellet ablation was attributed to the energy deposition of relativistic runaway electrons in the pellet. A high normalized electron density was stably obtained with n e bar /n GW ∼2.2. Effects of prompt exhaust of runaway electrons and reduction of runaway plasma current without large amplitude MHD activities were found. One possible explanation for the basic behavior of runaway plasma current is that it follows the balance of avalanche generation of runaway electrons and slowing down predicted by the Andersson-Helander model, including the combined effect of collisional pitch angle scattering and synchrotron radiation. Our results suggested that the impurity pellet injection reduced the energy of runaway electrons in a stepwise manner. (author)

Heavy Ion Injection Into Synchrotrons, Based On Electron String Ion Sources

CERN Document Server

Donets, E E; Syresin, E M

2004-01-01

A possibility of heavy ions injection into synchrotrons is discussed on the base of two novel ion sources, which are under development JINR during last decade: 1) the electron string ion source (ESIS), which is a modified version of a conventional electron beam ion source (EBIS), working in a reflex mode of operation, and 2) the tubular electron string ion source (TESIS). The Electron String Ion Source "Krion-2" (VBLHE, JINR, Dubna) with an applied confining magnetic field of 3 T was used for injection into the superconducting JINR synchrotron - Nuclotron and during this runs the source provided a high pulse intensity of the highly charged ion beams: Ar16+

Terahertz hot electron bolometer waveguide mixers for GREAT

OpenAIRE

Pütz, P.; Honingh, C. E.; Jacobs, K.; Justen, M.; Schultz, M.; Stutzki, J.

2012-01-01

Supplementing the publications based on the first-light observations with the German Receiver for Astronomy at Terahertz frequencies (GREAT) on SOFIA, we present background information on the underlying heterodyne detector technology. We describe the superconducting hot electron bolometer (HEB) detectors that are used as frequency mixers in the L1 (1400 GHz), L2 (1900 GHz), and M (2500 GHz) channels of GREAT. Measured performance of the detectors is presented and background information on the...

Hot Electron Photoemission from Plasmonic Nanostructures: The Role of Surface Photoemission and Transition Absorption

DEFF Research Database (Denmark)

Babicheva, Viktoriia; Zhukovsky, Sergei; Ikhsanov, Renat Sh

2015-01-01

We study mechanisms of photoemission of hot electrons from plasmonic nanoparticles. We analyze the contribution of "transition absorption", i.e., loss of energy of electrons passing through the boundary between different materials, to the surface mechanism of photoemission. We calculate photoemis......We study mechanisms of photoemission of hot electrons from plasmonic nanoparticles. We analyze the contribution of "transition absorption", i.e., loss of energy of electrons passing through the boundary between different materials, to the surface mechanism of photoemission. We calculate...... photoemission rate and transition absorption for nanoparticles surrounded by various media with a broad range of permittivities and show that photoemission rate and transition absorption follow the same dependence on the permittivity. Thus, we conclude that transition absorption is responsible...

Rocket potential measurements during electron beam injection into the ionosphere

International Nuclear Information System (INIS)

Gringauz, K.I.; Shutte, N.M.

1981-01-01

Electron flux measurements were made during pulsed injection of electron beams at a current of about 0.5 A and energy of 15 or 27 keV, using a retarding potential analyzer which was mounted on the lateral surface of the Eridan rocket during the ARAKS experiment of January 26, 1975. The general character of the retardation curves was found to be the same regardless of the electron injection energy, and regardless of the fact whether the plasma generator, injecting quasineutral cesium plasma with an ion current of about 10 A, was switched on. A sharp current increase in the interval between 10 to the -7th and 10 to the -6th A was observed with a decrease of the retarding potential. The rocket potential did not exceed approximately 150 V at about 130 to 190 km, and decreased to 20 V near 100 km. This was explained by the formation of a highly conducting region near the rocket, which was formed via intense plasma waves generated by the beam. Measurements of electron fluxes with energies of 1 to 3 keV agree well with estimates based on the beam plasma discharge theory

Electroluminescence from porous silicon due to electron injection from solution

NARCIS (Netherlands)

Kooij, Ernst S.; Despo, R.W.; Kelly, J.J.

1995-01-01

We report on the electroluminescence from p‐type porous silicon due to minority carrier injection from an electrolyte solution. The MV+• radical cation formed in the reduction of divalent methylviologen is able to inject electrons into the conduction band of crystalline and porous silicon. The

Electronic oscillations in a hot plasma due the non-Maxwellian velocity distributions

International Nuclear Information System (INIS)

Dias, L.A.V.; Nakamura, Y.

1977-01-01

In a completely ionized hot plasma, with a non-Maxwellian electron velocity distribution, it is shown that, depending on the electron temperature, oscillations may occur at the elctron plasma and gyro frequencies. For three different electron velocity distributions, it is shown the oscillations dependency on the temperature. This situation occurs in the ionospheric plasma when artificially heated by HF radio waves. If the distribution is Maxwellian, the oscillation only occur near the electron plasma frequency [pt

Energetic electron injections and dipolarization events in Mercury's magnetotail: Substorm dynamics

Science.gov (United States)

Dewey, R. M.; Slavin, J. A.; Raines, J. M.; Imber, S.; Baker, D. N.; Lawrence, D. J.

2017-12-01

Despite its small size, Mercury's terrestrial-like magnetosphere experiences brief, yet intense, substorm intervals characterized by features similar to at Earth: loading/unloading of the tail lobes with open magnetic flux, dipolarization of the magnetic field at the inner edge of the plasma sheet, and, the focus of this presentation, energetic electron injection. We use the Gamma-Ray Spectrometer's high-time resolution (10 ms) energetic electron measurements to determine the relationship between substorm activity and energetic electron injections coincident with dipolarization fronts in the magnetotail. These dipolarizations were detected on the basis of their rapid ( 2 s) increase in the northward component of the tail magnetic field (ΔBz 30 nT), which typically persists for 10 s. We estimate the typical flow channel to be 0.15 RM, planetary convection speed of 750 km/s, cross-tail potential drop of 7 kV, and flux transport of 0.08 MWb for each dipolarization event, suggesting multiple simultaneous and sequential dipolarizations are required to unload the >1 MWb of magnetic flux typically returned to the dayside magnetosphere during a substorm interval. Indeed, while we observe most dipolarization-injections to be isolated or in small chains of events (i.e., 1-3 events), intervals of sawtooth-like injections with >20 sequential events are also present. The typical separation between dipolarization-injection events is 10 s. Magnetotail dipolarization, in addition to being a powerful source of electron acceleration, also plays a significant role in the substorm process at Mercury.

Nonvolatile memory design magnetic, resistive, and phase change

CERN Document Server

Li, Hai

2011-01-01

The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances,

Controlling charge injection in organic electronic devices using self-assembled monolayers

Energy Technology Data Exchange (ETDEWEB)

Campbell, I.H.; Kress, J.D.; Martin, R.L.; Smith, D.L. [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Barashkov, N.N.; Ferraris, J.P. [The University of Texas at Dallas, Richardson, Texas 75083 (United States)

1997-12-01

We demonstrate control and improvement of charge injection in organic electronic devices by utilizing self-assembled monolayers (SAMs) to manipulate the Schottky energy barrier between a metal electrode and the organic electronic material. Hole injection from Cu electrodes into the electroluminescent conjugated polymer poly[2-methoxy,5-(2{sup {prime}}-ethyl-hexyloxy)-1,4-phenylene vinylene] was varied by using two conjugated-thiol based SAMs. The chemically modified electrodes were incorporated in organic diode structures and changes in the metal/polymer Schottky energy barriers and current{endash}voltage characteristics were measured. Decreasing (increasing) the Schottky energy barrier improves (degrades) charge injection into the polymer. {copyright} {ital 1997 American Institute of Physics.}

Hot Hole Collection and Photoelectrochemical CO2 Reduction with Plasmonic Au/p-GaN Photocathodes.

Science.gov (United States)

DuChene, Joseph S; Tagliabue, Giulia; Welch, Alex J; Cheng, Wen-Hui; Atwater, Harry A

2018-04-11

Harvesting nonequilibrium hot carriers from plasmonic-metal nanostructures offers unique opportunities for driving photochemical reactions at the nanoscale. Despite numerous examples of hot electron-driven processes, the realization of plasmonic systems capable of harvesting hot holes from metal nanostructures has eluded the nascent field of plasmonic photocatalysis. Here, we fabricate gold/p-type gallium nitride (Au/p-GaN) Schottky junctions tailored for photoelectrochemical studies of plasmon-induced hot-hole capture and conversion. Despite the presence of an interfacial Schottky barrier to hot-hole injection of more than 1 eV across the Au/p-GaN heterojunction, plasmonic Au/p-GaN photocathodes exhibit photoelectrochemical properties consistent with the injection of hot holes from Au nanoparticles into p-GaN upon plasmon excitation. The photocurrent action spectrum of the plasmonic photocathodes faithfully follows the surface plasmon resonance absorption spectrum of the Au nanoparticles and open-circuit voltage studies demonstrate a sustained photovoltage during plasmon excitation. Comparison with Ohmic Au/p-NiO heterojunctions confirms that the vast majority of hot holes generated via interband transitions in Au are sufficiently hot to inject above the 1.1 eV interfacial Schottky barrier at the Au/p-GaN heterojunction. We further investigated plasmon-driven photoelectrochemical CO 2 reduction with the Au/p-GaN photocathodes and observed improved selectivity for CO production over H 2 evolution in aqueous electrolytes. Taken together, our results offer experimental validation of photoexcited hot holes more than 1 eV below the Au Fermi level and demonstrate a photoelectrochemical platform for harvesting hot carriers to drive solar-to-fuel energy conversion.

Effect of tunneling layers on the performances of floating-gate based organic thin-film transistor nonvolatile memories

Science.gov (United States)

Wang, Wei; Han, Jinhua; Ying, Jun; Xiang, Lanyi; Xie, Wenfa

2014-09-01

Two types of floating-gate based organic thin-film transistor nonvolatile memories (FG-OTFT-NVMs) were demonstrated, with poly(methyl methacrylate co glycidyl methacrylate) (P(MMA-GMA)) and tetratetracontane (TTC) as the tunneling layer, respectively. Their device performances were measured and compared. In the memory with a P(MMA-GMA) tunneling layer, typical unipolar hole transport was obtained with a relatively small mobility of 0.16 cm2/V s. The unidirectional shift of turn-on voltage (Von) due to only holes trapped/detrapped in/from the floating gate resulted in a small memory window of 12.5 V at programming/erasing voltages (VP/VE) of ±100 V and a nonzero reading voltage. Benefited from the well-ordered molecule orientation and the trap-free surface of TTC layer, a considerably high hole mobility of 1.7 cm2/V s and a visible feature of electrons accumulated in channel and trapped in floating-gate were achieved in the memory with a TTC tunneling layer. High hole mobility resulted in a high on current and a large memory on/off ratio of 600 at the VP/VE of ±100 V. Both holes and electrons were injected into floating-gate and overwritten each other, which resulted in a bidirectional Von shift. As a result, an enlarged memory window of 28.6 V at the VP/VE of ±100 V and a zero reading voltage were achieved. Based on our results, a strategy is proposed to optimize FG-OTFT-NVMs by choosing a right tunneling layer to improve the majority carrier mobility and realize ambipolar carriers injecting and trapping in the floating-gate.

Fast Advection of Magnetic Fields by Hot Electrons

International Nuclear Information System (INIS)

Willingale, L.; Thomas, A. G. R.; Krushelnick, K.; Nilson, P. M.; Kaluza, M. C.; Dangor, A. E.; Evans, R. G.; Fernandes, P.; Haines, M. G.; Kamperidis, C.; Kingham, R. J.; Ridgers, C. P.; Sherlock, M.; Wei, M. S.; Najmudin, Z.; Bandyopadhyay, S.; Notley, M.; Minardi, S.; Tatarakis, M.; Rozmus, W.

2010-01-01

Experiments where a laser-generated proton beam is used to probe the megagauss strength self-generated magnetic fields from a nanosecond laser interaction with an aluminum target are presented. At intensities of 10 15 W cm -2 and under conditions of significant fast electron production and strong heat fluxes, the electron mean-free-path is long compared with the temperature gradient scale length and hence nonlocal transport is important for the dynamics of the magnetic field in the plasma. The hot electron flux transports self-generated magnetic fields away from the focal region through the Nernst effect [A. Nishiguchi et al., Phys. Rev. Lett. 53, 262 (1984)] at significantly higher velocities than the fluid velocity. Two-dimensional implicit Vlasov-Fokker-Planck modeling shows that the Nernst effect allows advection and self-generation transports magnetic fields at significantly faster than the ion fluid velocity, v N /c s ≅10.

First observations of acceleration of injected electrons in a laser plasma beatwave experiment

International Nuclear Information System (INIS)

Ebrahim, N.A.; Martin, F.; Bordeur, P.; Heighway, E.A.; Matte, J.P.; Pepin, H.; Lavigne, P.

1986-01-01

The first experimental observations of acceleration of injected electrons in a laser driven plasma beatwave are presented. The plasma waves were excited in an ionized gas jet, using a short pulse high intensity CO 2 laser with two collinearly propagating beams (at λ = 9.6 μm and 10.6 μm) to excite a fast wave (v/sub p/ = c). The source of electrons was a laser plasma produced on an aluminum slab target by a third, synchronized CO 2 laser beam. A double-focusing dipole magnet was used to energy select and inject electrons into the beatwave, and a second magnetic spectrograph was used to analyze the accelerated electrons. Electron acceleration was only observed when the appropriate resonant plasma density was produced (∼ 10 17 cm -3 ), the two laser lines were incident on the plasma, and electrons were injected into this plasma from an external source

Efficient Injection of Electron Beams into Magnetic Guide Fields

International Nuclear Information System (INIS)

Chorny, V.; Cooperstein, G.; Dubyna, V.; Frolov, O.; Harper-Slaboszewicz, V.; Hinshelwood, D.; Schneider, R.; Solovyov, V.; Tsepilov, H.; Vitkovitsky, I.; Ware, K.

1999-01-01

Preliminary experimental and modeling study of injection and transport of high current electron beams in current-neutralized background gas has been performed. Initial analysis of the results indicates that high current triaxial ring diode operates very reproducibly in the pinch mode. High current density beam can be injected efficiently into the drift region, using azimuthal guide field with reduced intensity near the injection region. This was shown to improve the effectiveness of capturing the beam for the transport. The transport length was insufficient to measure losses, such as would arise from scattering with the background gas

Untargeted metabolomic analysis using liquid chromatography quadrupole time-of-flight mass spectrometry for non-volatile profiling of wines

International Nuclear Information System (INIS)

Arbulu, M.; Sampedro, M.C.; Gómez-Caballero, A.; Goicolea, M.A.; Barrio, R.J.

2015-01-01

Highlights: • An untargeted metabolomic method for the non-volatile profile of the Graciano wine was developed. • 411 different metabolites in Graciano Vitis vinifera red wine were identified. • 15 compounds could serve to differentiate Graciano and Tempranillo wines. • An enological database (WinMet) with 2080 compounds was constructed. - Abstract: The current study presents a method for comprehensive untargeted metabolomic fingerprinting of the non-volatile profile of the Graciano Vitis vinifera wine variety, using liquid chromatography/electrospray ionization time of flight mass spectrometry (LC–ESI-QTOF). Pre-treatment of samples, chromatographic columns, mobile phases, elution gradients and ionization sources, were evaluated for the extraction of the maximum number of metabolites in red wine. Putative compounds were extracted from the raw data using the extraction algorithm, molecular feature extractor (MFE). For the metabolite identification the WinMet database was designed based on electronic databases and literature research and includes only the putative metabolites reported to be present in oenological matrices. The results from WinMet were compared with those in the METLIN database to evaluate how much the databases overlap for performing identifications. The reproducibility of the analysis was assessed using manual processing following replicate injections of Vitis vinifera cv. Graciano wine spiked with external standards. In the present work, 411 different metabolites in Graciano Vitis vinifera red wine were identified, including primary wine metabolites such as sugars (4%), amino acids (23%), biogenic amines (4%), fatty acids (2%), and organic acids (32%) and secondary metabolites such as phenols (27%) and esters (8%). Significant differences between varieties Tempranillo and Graciano were related to the presence of fifteen specific compounds

Untargeted metabolomic analysis using liquid chromatography quadrupole time-of-flight mass spectrometry for non-volatile profiling of wines

Energy Technology Data Exchange (ETDEWEB)

Arbulu, M. [Department of Analytical Chemistry, Faculty of Pharmacy, University of the Basque Country, 01006 Vitoria-Gasteiz (Spain); Sampedro, M.C. [Central Service of Analysis, SGIker, University of the Basque Country, 01006 Vitoria-Gasteiz (Spain); Gómez-Caballero, A.; Goicolea, M.A. [Department of Analytical Chemistry, Faculty of Pharmacy, University of the Basque Country, 01006 Vitoria-Gasteiz (Spain); Barrio, R.J., E-mail: r.barrio@ehu.es [Department of Analytical Chemistry, Faculty of Pharmacy, University of the Basque Country, 01006 Vitoria-Gasteiz (Spain)

2015-02-09

Highlights: • An untargeted metabolomic method for the non-volatile profile of the Graciano wine was developed. • 411 different metabolites in Graciano Vitis vinifera red wine were identified. • 15 compounds could serve to differentiate Graciano and Tempranillo wines. • An enological database (WinMet) with 2080 compounds was constructed. - Abstract: The current study presents a method for comprehensive untargeted metabolomic fingerprinting of the non-volatile profile of the Graciano Vitis vinifera wine variety, using liquid chromatography/electrospray ionization time of flight mass spectrometry (LC–ESI-QTOF). Pre-treatment of samples, chromatographic columns, mobile phases, elution gradients and ionization sources, were evaluated for the extraction of the maximum number of metabolites in red wine. Putative compounds were extracted from the raw data using the extraction algorithm, molecular feature extractor (MFE). For the metabolite identification the WinMet database was designed based on electronic databases and literature research and includes only the putative metabolites reported to be present in oenological matrices. The results from WinMet were compared with those in the METLIN database to evaluate how much the databases overlap for performing identifications. The reproducibility of the analysis was assessed using manual processing following replicate injections of Vitis vinifera cv. Graciano wine spiked with external standards. In the present work, 411 different metabolites in Graciano Vitis vinifera red wine were identified, including primary wine metabolites such as sugars (4%), amino acids (23%), biogenic amines (4%), fatty acids (2%), and organic acids (32%) and secondary metabolites such as phenols (27%) and esters (8%). Significant differences between varieties Tempranillo and Graciano were related to the presence of fifteen specific compounds.

Diffusive scattering of electrons by electron holes around injection fronts

Science.gov (United States)

Vasko, I. Y.; Agapitov, O. V.; Mozer, F. S.; Artemyev, A. V.; Krasnoselskikh, V. V.; Bonnell, J. W.

2017-03-01

Van Allen Probes have detected nonlinear electrostatic spikes around injection fronts in the outer radiation belt. These spikes include electron holes (EH), double layers, and more complicated solitary waves. We show that EHs can efficiently scatter electrons due to their substantial transverse electric fields. Although the electron scattering driven by EHs is diffusive, it cannot be evaluated via the standard quasi-linear theory. We derive analytical formulas describing local electron scattering by a single EH and verify them via test particle simulations. We show that the most efficiently scattered are gyroresonant electrons (crossing EH on a time scale comparable to the local electron gyroperiod). We compute bounce-averaged diffusion coefficients and demonstrate their dependence on the EH spatial distribution (latitudinal extent and spatial filling factor) and individual EH parameters (amplitude of electrostatic potential, velocity, and spatial scales). We show that EHs can drive pitch angle scattering of ≲5 keV electrons at rates 10-2-10-4 s-1 and, hence, can contribute to electron losses and conjugated diffuse aurora brightenings. The momentum and pitch angle scattering rates can be comparable, so that EHs can also provide efficient electron heating. The scattering rates driven by EHs at L shells L ˜ 5-8 are comparable to those due to chorus waves and may exceed those due to electron cyclotron harmonics.

Modelling hot electron generation in short pulse target heating experiments

Directory of Open Access Journals (Sweden)

Sircombe N.J.

2013-11-01

Full Text Available Target heating experiments planned for the Orion laser facility, and electron beam driven fast ignition schemes, rely on the interaction of a short pulse high intensity laser with dense material to generate a flux of energetic electrons. It is essential that the characteristics of this electron source are well known in order to inform transport models in radiation hydrodynamics codes and allow effective evaluation of experimental results and forward modelling of future campaigns. We present results obtained with the particle in cell (PIC code EPOCH for realistic target and laser parameters, including first and second harmonic light. The hot electron distributions are characterised and their implications for onward transport and target heating are considered with the aid of the Monte-Carlo transport code THOR.

THERMAL RESPONSE OF A SOLAR-LIKE ATMOSPHERE TO AN ELECTRON BEAM FROM A HOT JUPITER: A NUMERICAL EXPERIMENT

International Nuclear Information System (INIS)

Gu, P.-G.; Suzuki, Takeru K.

2009-01-01

We investigate the thermal response of the atmosphere of a solar-type star to an electron beam injected from a hot Jupiter by performing a one-dimensional MHD numerical experiment with nonlinear wave dissipation, radiative cooling, and thermal conduction. In our experiment, the stellar atmosphere is non-rotating and is modeled as a one-dimensional open flux tube expanding super-radially from the stellar photosphere to the planet. An electron beam is assumed to be generated from the reconnection site of the planet's magnetosphere. The effects of the electron beam are then implemented in our simulation as dissipation of the beam momentum and energy at the base of the corona where the Coulomb collisions become effective. When the sufficient energy is supplied by the electron beam, a warm region forms in the chromosphere. This warm region greatly enhances the radiative fluxes corresponding to the temperature of the chromosphere and transition region. The warm region can also intermittently contribute to the radiative flux associated with the coronal temperature due to the thermal instability. However, owing to the small area of the heating spot, the total luminosity of the beam-induced chromospheric radiation is several orders of magnitude smaller than the observed Ca II emissions from HD 179949.

Prediction of hot electron production by ultraintense KrF laser-plasma interactions on solid-density targets

International Nuclear Information System (INIS)

Kato, Susumu; Takahashi, Eiichi; Miura, Eisuke; Owadano, Yoshiro; Nakamura, Tatsufumi; Kato, Tomokazu

2002-01-01

The scaling of hot electron temperature and the spectrum of electron energy by intense laser plasma interactions are reexamined from a viewpoint of the difference in laser wavelength. Laser plasma interaction such as parametric instabilities is usually determined by the Iλ2 scaling, where I and λ is the laser intensity and wavelength, respectively. However, the hot electron temperature is proportional to (ncr/ne0)1/2 [(1 + a 0 2 ) 1/2 - 1] rather than [(1 + a 0 2 ) 1/2 - 1] at the interaction with overdense plasmas, where ne0 is a electron density of overdense plasmas and a0 is a normalized laser intensity

Electric field dependence of the temperature and drift velocity of hot electrons in n-Si

International Nuclear Information System (INIS)

Vass, E.

2001-01-01

Full text: The average energy- and momentum loss rates of hot electrons interacting simultaneously with acoustic phonons, ionized and neutral impurities in n-Si are calculated quantum theoretically by means of a drifted hot Fermi-Dirac distribution. The drift velocity vd and electron temperature Te occurring in this distribution are determined self-consistently from the force- and power balance equation with respect to the charge neutrality condition. The functions Te(E) and vd(E) calculated in this way are compared with the corresponding relations obtained with help of the simple electron temperature model in order to determine the range of application of this model often used in previous treatises. (author)

Models for Total-Dose Radiation Effects in Non-Volatile Memory

Energy Technology Data Exchange (ETDEWEB)

Campbell, Philip Montgomery; Wix, Steven D.

2017-04-01

The objective of this work is to develop models to predict radiation effects in non- volatile memory: flash memory and ferroelectric RAM. In flash memory experiments have found that the internal high-voltage generators (charge pumps) are the most sensitive to radiation damage. Models are presented for radiation effects in charge pumps that demonstrate the experimental results. Floating gate models are developed for the memory cell in two types of flash memory devices by Intel and Samsung. These models utilize Fowler-Nordheim tunneling and hot electron injection to charge and erase the floating gate. Erase times are calculated from the models and compared with experimental results for different radiation doses. FRAM is less sensitive to radiation than flash memory, but measurements show that above 100 Krad FRAM suffers from a large increase in leakage current. A model for this effect is developed which compares closely with the measurements.

Spin-dependent hot electron transport and nano-scale magnetic imaging of metal/Si structures

International Nuclear Information System (INIS)

Kaidatzis, A.

2008-10-01

In this work, we experimentally study spin-dependent hot electron transport through metallic multilayers (ML), containing single magnetic layers or 'spin-valve' (SV) tri layers. For this purpose, we have set up a ballistic electron emission microscope (BEEM), a three terminal extension of scanning tunnelling microscopy on metal/semiconductor structures. The implementation of the BEEM requirements into the sample fabrication is described in detail. Using BEEM, the hot electron transmission through the ML's was systematically measured in the energy range 1-2 eV above the Fermi level. By varying the magnetic layer thickness, the spin-dependent hot electron attenuation lengths were deduced. For the materials studied (Co and NiFe), they were compared to calculations and other determinations in the literature. For sub-monolayer thickness, a non uniform morphology was observed, with large transmission variations over sub-nano-metric distances. This effect is not yet fully understood. In the imaging mode, the magnetic configurations of SV's were studied under field, focusing on 360 degrees domain walls in Co layers. The effects of the applied field intensity and direction on the DW structure were studied. The results were compared quantitatively to micro-magnetic calculations, with an excellent agreement. From this, it can be shown that the BEEM magnetic resolution is better than 50 nm. (author)

Method for refreshing a non-volatile memory

Science.gov (United States)

Riekels, James E.; Schlesinger, Samuel

2008-11-04

A non-volatile memory and a method of refreshing a memory are described. The method includes allowing an external system to control refreshing operations within the memory. The memory may generate a refresh request signal and transmit the refresh request signal to the external system. When the external system finds an available time to process the refresh request, the external system acknowledges the refresh request and transmits a refresh acknowledge signal to the memory. The memory may also comprise a page register for reading and rewriting a data state back to the memory. The page register may comprise latches in lieu of supplemental non-volatile storage elements, thereby conserving real estate within the memory.

Energetic Electron Acceleration and Injection During Dipolarization Events in Mercury's Magnetotail

Science.gov (United States)

Dewey, Ryan M.; Slavin, James A.; Raines, Jim M.; Baker, Daniel N.; Lawrence, David J.

2017-12-01

Energetic particle bursts associated with dipolarization events within Mercury's magnetosphere were first observed by Mariner 10. The events appear analogous to particle injections accompanying dipolarization events at Earth. The Energetic Particle Spectrometer (3 s resolution) aboard MESSENGER determined the particle bursts are composed entirely of electrons with energies ≳ 300 keV. Here we use the Gamma-Ray Spectrometer high-time-resolution (10 ms) energetic electron measurements to examine the relationship between energetic electron injections and magnetic field dipolarization in Mercury's magnetotail. Between March 2013 and April 2015, we identify 2,976 electron burst events within Mercury's magnetotail, 538 of which are closely associated with dipolarization events. These dipolarizations are detected on the basis of their rapid ( 2 s) increase in the northward component of the tail magnetic field (ΔBz 30 nT), which typically persists for 10 s. Similar to those at Earth, we find that these dipolarizations appear to be low-entropy, depleted flux tubes convecting planetward following the collapse of the inner magnetotail. We find that electrons experience brief, yet intense, betatron and Fermi acceleration during these dipolarizations, reaching energies 130 keV and contributing to nightside precipitation. Thermal protons experience only modest betatron acceleration. While only 25% of energetic electron events in Mercury's magnetotail are directly associated with dipolarization, the remaining events are consistent with the Near-Mercury Neutral Line model of magnetotail injection and eastward drift about Mercury, finding that electrons may participate in Shabansky-like closed drifts about the planet. Magnetotail dipolarization may be the dominant source of energetic electron acceleration in Mercury's magnetosphere.

Technology breakthroughs in high performance metal-oxide-semiconductor devices for ultra-high density, low power non-volatile memory applications

Science.gov (United States)

Hong, Augustin Jinwoo

Non-volatile memory devices have attracted much attention because data can be retained without power consumption more than a decade. Therefore, non-volatile memory devices are essential to mobile electronic applications. Among state of the art non-volatile memory devices, NAND flash memory has earned the highest attention because of its ultra-high scalability and therefore its ultra-high storage capacity. However, human desire as well as market competition requires not only larger storage capacity but also lower power consumption for longer battery life time. One way to meet this human desire and extend the benefits of NAND flash memory is finding out new materials for storage layer inside the flash memory, which is called floating gate in the state of the art flash memory device. In this dissertation, we study new materials for the floating gate that can lower down the power consumption and increase the storage capacity at the same time. To this end, we employ various materials such as metal nanodot, metal thin film and graphene incorporating complementary-metal-oxide-semiconductor (CMOS) compatible processes. Experimental results show excellent memory effects at relatively low operating voltages. Detailed physics and analysis on experimental results are discussed. These new materials for data storage can be promising candidates for future non-volatile memory application beyond the state of the art flash technologies.

Arrangement of furnaces and retorts for the distillation of shale, etc. [injection of hot air

Energy Technology Data Exchange (ETDEWEB)

Lahore, M

1846-01-31

The patent is concerned with the distillation of dried materials, the distillation being facilitated by injection of hot air into the retorts. Figures show apparatus for heating the air, consisting of a series of pipes, connected together and placed horizontally in the interior of the furnace on bricks arranged in such a way that the flames and smoke circulate, as shown, around each pipe, touching first all the surface of the large one placed in the center. The air enters this tube, and from it passes into the others which it runs through successively, coming finally into the last pipe, being heated in this journey to a very high temperature. The last tube ends in a bell from which different branches start, each supplied with stop-cocks, to lead this hot air into the different sections of the retort. With the stop-cocks the quantity of air can be regulated at will, in the compartment of the retort, for accelerating the operation more or less.

Experiments on the injection, confinement, and ejection of electron clouds in a magnetic mirror

International Nuclear Information System (INIS)

Eckhouse, S.; Fisher, A.; Rostoker, N.

1978-01-01

A cloud of (5 to 10 keV) electrons is injected into a magnetic mirror field. The magnetic field rises in 40--120 μsec to a maximum of 10 kG. Two methods of injection were tried: In the first, the injector is located at the mirror midplane and electrons are injected perpendicular to the magnetic field lines. In the second scheme, the injector is located near the mirror maximum. Up to about 10 11 electrons were trapped in both schemes with a mean kinetic energy of 0.3 MeV. Measured confinement time is limited only by the magnetic field decay time. The compressed electron cloud executes electrostatic oscillations. The frequency of the oscillation is proportional to the number of electrons trapped, and it is independent of the value of the magnetic field and the initial electron energy. The electron cloud was ejected along the mirror axis and properties of the ejected electron cloud were measured by x-ray pulses from bremstrahlung of electrons on the vacuum system wall and by collecting electrons on a Faraday cup

Fokker-Planck simulation of runaway electron generation in disruptions with the hot-tail effect

Energy Technology Data Exchange (ETDEWEB)

Nuga, H., E-mail: nuga@p-grp.nucleng.kyoto-u.ac.jp; Fukuyama, A. [Department of Engineering, Kyoto University, Kyoto 615-8540 (Japan); Yagi, M. [National Institutes for Quantum and Radiological Science and Technology, Aomori 039-3212 (Japan)

2016-06-15

To study runaway electron generation in disruptions, we have extended the three-dimensional (two-dimensional in momentum space; one-dimensional in the radial direction) Fokker-Planck code, which describes the evolution of the relativistic momentum distribution function of electrons and the induced toroidal electric field in a self-consistent manner. A particular focus is placed on the hot-tail effect in two-dimensional momentum space. The effect appears if the drop of the background plasma temperature is sufficiently rapid compared with the electron-electron slowing down time for a few times of the pre-quench thermal velocity. It contributes to not only the enhancement of the primary runaway electron generation but also the broadening of the runaway electron distribution in the pitch angle direction. If the thermal energy loss during the major disruption is assumed to be isotropic, there are hot-tail electrons that have sufficiently large perpendicular momentum, and the runaway electron distribution becomes broader in the pitch angle direction. In addition, the pitch angle scattering also yields the broadening. Since the electric field is reduced due to the burst of runaway electron generation, the time required for accelerating electrons to the runaway region becomes longer. The longer acceleration period makes the pitch-angle scattering more effective.

Tunable Injection Barrier in Organic Resistive Switches Based on Phase-Separated Ferroelectric-Semiconductor Blends

NARCIS (Netherlands)

Asadi, Kamal; de Boer, Tom G.; Blom, Paul W. M.; de Leeuw, Dago M.

2009-01-01

Organic non-volatile resistive bistable diodes based on phase-separated blends of ferroelectric and semiconducting polymers are fabricated. The polarization field of the ferroelectric modulates the injection barrier at the semiconductor-electrode contact and, hence, the resistance of the comprising

Tunable injection barrier in organic resistive switches based on phase-separated ferroelectric-semiconductor blends

NARCIS (Netherlands)

Asadi, K.; Boer, T.G. de; Blom, P.W.M.; Leeuw, D.M. de

2009-01-01

Organic non-volatile resistive bistable diodes based on phase-separated blends of ferroelectric and semiconducting polymers are fabricated. The polarization field of the ferroelectric modulates the injection barrier at the semiconductor-electrode contact and, hence, the resistance of the comprising

The DFT investigations of the electron injection in hydrazone-based sensitizers

KAUST Repository

Al-Sehemi, Abdullah G.; Irfan, Ahmad; Asiri, Abdullah M.

2012-01-01

solvent. The calculated absorption spectra in ethanol, acetonitrile, and methanol are in good agreement with experimental evidences. The absorption spectra are red shifted compared to System1. On the basis of electron injection and electronic coupling

Antenna-coupled 30 THz hot electron bolometer mixers

OpenAIRE

Shcherbatenko, M.; Lobanov, Y.; Benderov, O.; Shurakov, A.; Ignatov, A.; Titova, N.; Finkel, M.; Maslennikov, S.; Kaurova, N.; Voronov, B.M.; Rodin, A.; Klapwijk, T.M.; Gol'tsman, G.N.

2015-01-01

We report on design and characterization of a superconducting Hot Electron Bolometer Mixer integrated with a logarithmic spiral antenna for mid-IR range observations. The antenna parameters have been adjusted to achieve the ultimate performance at 10 ?m (30 THz) range where O3, NH3, CO2, CH4, N2O, …. lines in the Earth’s atmosphere, in planetary atmospheres and in the interstellar space can be observed. The HEB mixer is made of a thin NbN film deposited onto a GaAs substrate. To couple the ra...

Hot LO-phonon limited electron transport in ZnO/MgZnO channels

Science.gov (United States)

Šermukšnis, E.; Liberis, J.; Matulionis, A.; Avrutin, V.; Toporkov, M.; Özgür, Ü.; Morkoç, H.

2018-05-01

High-field electron transport in two-dimensional channels at ZnO/MgZnO heterointerfaces has been investigated experimentally. Pulsed current-voltage (I-V) and microwave noise measurements used voltage pulse widths down to 30 ns and electric fields up to 100 kV/cm. The samples investigated featured electron densities in the range of 4.2-6.5 × 1012 cm-2, and room temperature mobilities of 142-185 cm2/V s. The pulsed nature of the applied field ensured negligible, if any, change in the electron density, thereby allowing velocity extraction from current with confidence. The highest extracted electron drift velocity of ˜0.5 × 107 cm/s is somewhat smaller than that estimated for bulk ZnO; this difference is explained in the framework of longitudinal optical phonon accumulation (hot-phonon effect). The microwave noise data allowed us to rule out the effect of excess acoustic phonon temperature caused by Joule heating. Real-space transfer of hot electrons into the wider bandgap MgZnO layer was observed to be a limiting factor in samples with a high Mg content (48%), due to phase segregation and the associated local lowering of the potential barrier.

Origins and Scaling of Hot-Electron Preheat in Ignition-Scale Direct-Drive Inertial Confinement Fusion Experiments

Science.gov (United States)

Rosenberg, M. J.; Solodov, A. A.; Myatt, J. F.; Seka, W.; Michel, P.; Hohenberger, M.; Short, R. W.; Epstein, R.; Regan, S. P.; Campbell, E. M.; Chapman, T.; Goyon, C.; Ralph, J. E.; Barrios, M. A.; Moody, J. D.; Bates, J. W.

2018-01-01

Planar laser-plasma interaction (LPI) experiments at the National Ignition Facility (NIF) have allowed access for the first time to regimes of electron density scale length (˜500 to 700 μ m ), electron temperature (˜3 to 5 keV), and laser intensity (6 to 16 ×1014 W /cm2 ) that are relevant to direct-drive inertial confinement fusion ignition. Unlike in shorter-scale-length plasmas on OMEGA, scattered-light data on the NIF show that the near-quarter-critical LPI physics is dominated by stimulated Raman scattering (SRS) rather than by two-plasmon decay (TPD). This difference in regime is explained based on absolute SRS and TPD threshold considerations. SRS sidescatter tangential to density contours and other SRS mechanisms are observed. The fraction of laser energy converted to hot electrons is ˜0.7 % to 2.9%, consistent with observed levels of SRS. The intensity threshold for hot-electron production is assessed, and the use of a Si ablator slightly increases this threshold from ˜4×10 14 to ˜6 ×1014 W /cm2 . These results have significant implications for mitigation of LPI hot-electron preheat in direct-drive ignition designs.

Gap-plasmon based broadband absorbers for enhanced hot-electron and photocurrent generation

DEFF Research Database (Denmark)

Lu, Yuhua; Dong, Wen; Chen, Zhuo

2016-01-01

Plasmonic hot-electron generation has recently come into focus as a new scheme for solar energy conversion. So far, however, due to the relatively narrow bandwidth of the surface plasmon resonances and the insufficient resonant light absorption, most of plasmonic photocatalysts show narrow......-band spectral responsivities and small solar energy conversion efficiencies. Here we experimentally demonstrate that a three-layered nanostructure, consisting of a monolayer gold-nanoparticles and a gold film separated by a TiO2 gap layer (Au-NPs/TiO2/Au-film), is capable of near-completely absorbing light...... within the whole visible region. We show that the Au-NPs/TiO2/Au-film device can take advantage of such strong and broadband light absorption to enhance the generation of hot electrons and thus the photocurrent under visible irradiation. As compared to conventional plasmonic photocatalysts such as Au...

Localized structures of electromagnetic waves in hot electron-positron plasma

International Nuclear Information System (INIS)

Kartal, S.; Tsintsadze, L.N.; Berezhiani, V.I.

1995-08-01

The dynamics of relatively strong electromagnetic (EM) wave propagation in hot electron-positron plasma is investigated. The possibility of finding localized stationary structures of EM waves is explored. It it shown that under certain conditions the EM wave forms a stable localized soliton-like structures where plasma is completely expelled from the region of EM field location. (author). 9 refs, 2 figs

Preliminary pellet injection experiment in the Gamma 10 tandem mirror

Energy Technology Data Exchange (ETDEWEB)

Kawamori, Eiichirou; Tamano, Teruo; Nakashima, Yousuke; Yoshikawa, Masayuki; Kobayashi, Shinji; Cho, Teruji; Ishii, Kameo; Yatsu, Kiyoshi [Plasma Research Center, University of Tsukuba, Tsukuba, Ibaraki (Japan); Mase, Atsushi [Advanced Sceince and Technology Center for Cooperative Research, Kyushu University, Kasuga, Fukuoka (Japan)

2000-07-01

In the GAMMA 10 tandem mirror, pellet injection experiments have been started as a solution for the density limit problem. This is the first pellet injection experiment in open systems. We describe the possibilities of confinement of pellet fueled particles. For that, we measure the number of end loss particles and compare them with pellet fueled ones in various conditions of confining potentials. The deterioration of confining potential with the pellet injection is a fundamental issue. The results show that the ion confining potential recover faster than central electron temperature due to thermal barrier. We also consider the operating space for fueling method. It is demonstrated that the operating space for pellet injection exceeds gas fueled one on hot ion mode plasmas. (author)

The DFT investigations of the electron injection in hydrazone-based sensitizers

KAUST Repository

Al-Sehemi, Abdullah G.

2012-03-01

Quantum chemical calculations were carried out by using density functional theory and time-dependant density functional theory at B3LYP/6-31G(d) and TD-B3LYP/6-31G(d) level of theories. The absorption spectra have been computed with and without solvent. The calculated absorption spectra in ethanol, acetonitrile, and methanol are in good agreement with experimental evidences. The absorption spectra are red shifted compared to System1. On the basis of electron injection and electronic coupling constant, we have shed light on the nature of different sensitizers. The coplanarity between the benzene near anchoring group having LUMO and the bridge (N-N) is broken in System6 and System7 that would hamper the recombination process. The electron injection of System2-System10 is superior to System1. The highest electronic coupling constant has been observed for System6 that followed the System7 and System8. The light-harvesting efficiency of all the sensitizers enlarged in acetonitrile and ethanol. The long-range-corrected functional (LC-BLYP), Coulomb-attenuating method (CAM-B3LYP), and BH and HLYP functional underestimate the excitation energies while B3LYP is good to reproduce the experimental data. Moreover, we have investigated the effect of cyanoacetic acid as anchoring group on the electron injection. © 2012 Springer-Verlag.

Model for ion confinement in a hot-electron tandem mirror anchor

International Nuclear Information System (INIS)

Baldwin, D.E.

1980-01-01

Anisotropic, hot electrons trapped in local minimum-B wells have been proposed as MHD-stabilizing anchors to an otherwise axisymmetric tandem configuration. This work describes a model for plasma confinement between the anchors and the remainder of the system and calcuates the power loss implied by maintenance of this plasma

Flexible All-Inorganic Perovskite CsPbBr3 Nonvolatile Memory Device.

Science.gov (United States)

Liu, Dongjue; Lin, Qiqi; Zang, Zhigang; Wang, Ming; Wangyang, Peihua; Tang, Xiaosheng; Zhou, Miao; Hu, Wei

2017-02-22

All-inorganic perovskite CsPbX 3 (X = Cl, Br, or I) is widely used in a variety of photoelectric devices such as solar cells, light-emitting diodes, lasers, and photodetectors. However, studies to understand the flexible CsPbX 3 electrical application are relatively scarce, mainly due to the limitations of the low-temperature fabricating process. In this study, all-inorganic perovskite CsPbBr 3 films were successfully fabricated at 75 °C through a two-step method. The highly crystallized films were first employed as a resistive switching layer in the Al/CsPbBr 3 /PEDOT:PSS/ITO/PET structure for flexible nonvolatile memory application. The resistive switching operations and endurance performance demonstrated the as-prepared flexible resistive random access memory devices possess reproducible and reliable memory characteristics. Electrical reliability and mechanical stability of the nonvolatile device were further tested by the robust current-voltage curves under different bending angles and consecutive flexing cycles. Moreover, a model of the formation and rupture of filaments through the CsPbBr 3 layer was proposed to explain the resistive switching effect. It is believed that this study will offer a new setting to understand and design all-inorganic perovskite materials for future stable flexible electronic devices.

Effect of tunneling layers on the performances of floating-gate based organic thin-film transistor nonvolatile memories

International Nuclear Information System (INIS)

Wang, Wei; Han, Jinhua; Ying, Jun; Xiang, Lanyi; Xie, Wenfa

2014-01-01

Two types of floating-gate based organic thin-film transistor nonvolatile memories (FG-OTFT-NVMs) were demonstrated, with poly(methyl methacrylate co glycidyl methacrylate) (P(MMA-GMA)) and tetratetracontane (TTC) as the tunneling layer, respectively. Their device performances were measured and compared. In the memory with a P(MMA-GMA) tunneling layer, typical unipolar hole transport was obtained with a relatively small mobility of 0.16 cm 2 /V s. The unidirectional shift of turn-on voltage (V on ) due to only holes trapped/detrapped in/from the floating gate resulted in a small memory window of 12.5 V at programming/erasing voltages (V P /V E ) of ±100 V and a nonzero reading voltage. Benefited from the well-ordered molecule orientation and the trap-free surface of TTC layer, a considerably high hole mobility of 1.7 cm 2 /V s and a visible feature of electrons accumulated in channel and trapped in floating-gate were achieved in the memory with a TTC tunneling layer. High hole mobility resulted in a high on current and a large memory on/off ratio of 600 at the V P /V E of ±100 V. Both holes and electrons were injected into floating-gate and overwritten each other, which resulted in a bidirectional V on shift. As a result, an enlarged memory window of 28.6 V at the V P /V E of ±100 V and a zero reading voltage were achieved. Based on our results, a strategy is proposed to optimize FG-OTFT-NVMs by choosing a right tunneling layer to improve the majority carrier mobility and realize ambipolar carriers injecting and trapping in the floating-gate.

Electrostatically telescoping nanotube nonvolatile memory device

International Nuclear Information System (INIS)

Kang, Jeong Won; Jiang Qing

2007-01-01

We propose a nonvolatile memory based on carbon nanotubes (CNTs) serving as the key building blocks for molecular-scale computers and investigate the dynamic operations of a double-walled CNT memory element by classical molecular dynamics simulations. The localized potential energy wells achieved from both the interwall van der Waals energy and CNT-metal binding energy make the bistability of the CNT positions and the electrostatic attractive forces induced by the voltage differences lead to the reversibility of this CNT memory. The material for the electrodes should be carefully chosen to achieve the nonvolatility of this memory. The kinetic energy of the CNT shuttle experiences several rebounds induced by the collisions of the CNT onto the metal electrodes, and this is critically important to the performance of such an electrostatically telescoping CNT memory because the collision time is sufficiently long to cause a delay of the state transition

Electron ECHO 6: a study by particle detectors of electrons artificially injected into the magnetosphere

International Nuclear Information System (INIS)

Malcolm, P.R.

1986-01-01

The ECHO-6 sounding rocket was launched from the Poke Flat Research Range, Alaska on 30 March 1983. A Terrier-Black Brant launch vehicle carried the payload on a northward trajectory over an auroral arc and to an apogee of 216 kilometers. The primary objective of the ECHO-6 experiment was to evaluate electric fields, magnetic fields, and plasma processes in the distant magnetosphere by injecting electron beams in the ionosphere and observing conjugate echoes. The experiment succeeded in injection 10-36 keV beams during the existence of a moderate growth-phase aurora, an easterly electrojet system, and a pre-midnight inflation condition of the magnetosphere. The ECHO-6 payload system consisted of an accelerator MAIN payload, a free-flying Plasma Diagnostics Package (PDP), and four rocket-propelled Throw Away Detectors (TADs). The PDP was ejected from the MAIN payload to analyze electric fields, plasma particles, energetic electrons, and photometric effects produced by beam injections. The TADs were ejected from the MAIN payload in a pattern to detect echoes in the conjugate echo region south of the beam-emitting MAIN payload. The TADs reached distances exceeding 3 kilometers from the MAIN payload and made measurements of the ambient electrons by means of solid-state detectors and electrostatic analyzers

Electroluminescence from graphene excited by electron tunneling

International Nuclear Information System (INIS)

Beams, Ryan; Bharadwaj, Palash; Novotny, Lukas

2014-01-01

We use low-energy electron tunneling to excite electroluminescence in single layer graphene. Electrons are injected locally using a scanning tunneling microscope and the luminescence is analyzed using a wide-angle optical imaging system. The luminescence can be switched on and off by inverting the tip–sample bias voltage. The observed luminescence is explained in terms of a hot luminescence mechanism. (paper)

Submolecular Gates Self-Assemble for Hot-Electron Transfer in Proteins.

Science.gov (United States)

Filip-Granit, Neta; Goldberg, Eran; Samish, Ilan; Ashur, Idan; van der Boom, Milko E; Cohen, Hagai; Scherz, Avigdor

2017-07-27

Redox reactions play key roles in fundamental biological processes. The related spatial organization of donors and acceptors is assumed to undergo evolutionary optimization facilitating charge mobilization within the relevant biological context. Experimental information from submolecular functional sites is needed to understand the organization strategies and driving forces involved in the self-development of structure-function relationships. Here we exploit chemically resolved electrical measurements (CREM) to probe the atom-specific electrostatic potentials (ESPs) in artificial arrays of bacteriochlorophyll (BChl) derivatives that provide model systems for photoexcited (hot) electron donation and withdrawal. On the basis of computations we show that native BChl's in the photosynthetic reaction center (RC) self-assemble at their ground-state as aligned gates for functional charge transfer. The combined computational and experimental results further reveal how site-specific polarizability perpendicular to the molecular plane enhances the hot-electron transport. Maximal transport efficiency is predicted for a specific, ∼5 Å, distance above the center of the metalized BChl, which is in remarkably close agreement with the distance and mutual orientation of corresponding native cofactors. These findings provide new metrics and guidelines for analysis of biological redox centers and for designing charge mobilizing machines such as artificial photosynthesis.

Efficient, Broadband and Wide-Angle Hot-Electron Transduction using Metal-Semiconductor Hyperbolic Metamaterials

KAUST Repository

Sakhdari, Maryam; Hajizadegan, Mehdi; Farhat, Mohamed; Chen, Pai-Yen

2016-01-01

Hot-electron devices are emerging as promising candidates for the transduction of optical radiation into electrical current, as they enable photodetection and solar/infrared energy harvesting at sub-bandgap wavelengths. Nevertheless, poor

Micron-scale mapping of megagauss magnetic fields using optical polarimetry to probe hot electron transport in petawatt-class laser-solid interactions.

Science.gov (United States)

Chatterjee, Gourab; Singh, Prashant Kumar; Robinson, A P L; Blackman, D; Booth, N; Culfa, O; Dance, R J; Gizzi, L A; Gray, R J; Green, J S; Koester, P; Kumar, G Ravindra; Labate, L; Lad, Amit D; Lancaster, K L; Pasley, J; Woolsey, N C; Rajeev, P P

2017-08-21

The transport of hot, relativistic electrons produced by the interaction of an intense petawatt laser pulse with a solid has garnered interest due to its potential application in the development of innovative x-ray sources and ion-acceleration schemes. We report on spatially and temporally resolved measurements of megagauss magnetic fields at the rear of a 50-μm thick plastic target, irradiated by a multi-picosecond petawatt laser pulse at an incident intensity of ~10 20 W/cm 2 . The pump-probe polarimetric measurements with micron-scale spatial resolution reveal the dynamics of the magnetic fields generated by the hot electron distribution at the target rear. An annular magnetic field profile was observed ~5 ps after the interaction, indicating a relatively smooth hot electron distribution at the rear-side of the plastic target. This is contrary to previous time-integrated measurements, which infer that such targets will produce highly structured hot electron transport. We measured large-scale filamentation of the hot electron distribution at the target rear only at later time-scales of ~10 ps, resulting in a commensurate large-scale filamentation of the magnetic field profile. Three-dimensional hybrid simulations corroborate our experimental observations and demonstrate a beam-like hot electron transport at initial time-scales that may be attributed to the local resistivity profile at the target rear.

Study of electron temperature evolution during sawtoothing and pellet injection using thermal electron cyclotron emission in the Alcator C tokamak

International Nuclear Information System (INIS)

Gomez, C.C.

1986-05-01

A study of the electron temperature evolution has been performed using thermal electron cyclotron emission. A six channel far infrared polychromator was used to monitor the radiation eminating from six radial locations. The time resolution was <3 μs. Three events were studied, the sawtooth disruption, propagation of the sawtooth generated heatpulse and the electron temperature response to pellet injection. The sawtooth disruption in Alcator takes place in 20 to 50 μs, the energy mixing radius is approx. 8 cm or a/2. It is shown that this is inconsistent with single resonant surface Kadomtsev reconnection. Various forms of scalings for the sawtooth period and amplitude were compared. The electron heatpulse propagation has been used to estimate chi e(the electron thermal diffusivity). The fast temperature relaxation observed during pellet injection has also been studied. Electron temperature profile reconstructions have shown that the profile shape can recover to its pre-injection form in a time scale of 200 μs to 3 ms depending on pellet size

Voltage control of metal-insulator transition and non-volatile ferroelastic switching of resistance in VOx/PMN-PT heterostructures.

Science.gov (United States)

Nan, Tianxiang; Liu, Ming; Ren, Wei; Ye, Zuo-Guang; Sun, Nian X

2014-08-04

The central challenge in realizing electronics based on strongly correlated electronic states, or 'Mottronics', lies in finding an energy efficient way to switch between the distinct collective phases with a control voltage in a reversible and reproducible manner. In this work, we demonstrate that a voltage-impulse-induced ferroelastic domain switching in the (011)-oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates allows a robust non-volatile tuning of the metal-insulator transition in the VOx films deposited onto them. In such a VOx/PMN-PT heterostructure, the unique two-step electric polarization switching covers up to 90% of the entire poled area and contributes to a homogeneous in-plane anisotropic biaxial strain, which, in turn, enables the lattice changes and results in the suppression of metal-insulator transition in the mechanically coupled VOx films by 6 K with a resistance change up to 40% over a broad range of temperature. These findings provide a framework for realizing in situ and non-volatile tuning of strain-sensitive order parameters in strongly correlated materials, and demonstrate great potentials in delivering reconfigurable, compactable, and energy-efficient electronic devices.

Ultra-low emittance electron beam generation using ionization injection in a plasma beatwave accelerator

Science.gov (United States)

Schroeder, Carl; Benedetti, Carlo; Esarey, Eric; Leemans, Wim

2017-10-01

Ultra-low emittance beams can be generated using ionization injection of electrons into a wakefield excited by a plasma beatwave accelerator. This all-optical method of electron beam generation uses three laser pulses of different colors. Two long-wavelength laser pulses, with frequency difference equal to the plasma frequency, resonantly drive a plasma wave without fully ionizing a gas. A short-wavelength injection laser pulse (with a small ponderomotive force and large peak electric field), co-propagating and delayed with respect to the beating long-wavelength lasers, ionizes a fraction of the remaining bound electrons at a trapped wake phase, generating an electron beam that is accelerated in the wakefield. Using the beating of long-wavelength pulses to generate the wakefield enables atomically-bound electrons to remain at low ionization potentials, reducing the required amplitude of the ionization pulse, and, hence, the initial transverse momentum and emittance of the injected electrons. An example is presented using two lines of a CO2 laser to form a plasma beatwave accelerator to drive the wake and a frequency-doubled Ti:Al2O3 laser for ionization injection. Supported by the U.S. Department of Energy under Contract No. DE-AC02-05CH11231.

Nonvolatile flip-flop based on pseudo-spin-transistor architecture and its nonvolatile power-gating applications for low-power CMOS logic

Science.gov (United States)

Yamamoto, Shuu'ichirou; Shuto, Yusuke; Sugahara, Satoshi

2013-07-01

We computationally analyzed performance and power-gating (PG) ability of a new nonvolatile delay flip-flop (NV-DFF) based on pseudo-spin-MOSFET (PS-MOSFET) architecture using spin-transfer-torque magnetic tunnel junctions (STT-MTJs). The high-performance energy-efficient PG operations of the NV-DFF can be achieved owing to its cell structure employing PS-MOSFETs that can electrically separate the STT-MTJs from the ordinary DFF part of the NV-DFF. This separation also makes it possible that the break-even time (BET) of the NV-DFF is designed by the size of the PS-MOSFETs without performance degradation of the normal DFF operations. The effect of the area occupation ratio of the NV-DFFs to a CMOS logic system on the BET was also analyzed. Although the optimized BET was varied depending on the area occupation ratio, energy-efficient fine-grained PG with a BET of several sub-microseconds was revealed to be achieved. We also proposed microprocessors and system-on-chip (SoC) devices using nonvolatile hierarchical-memory systems wherein NV-DFF and nonvolatile static random access memory (NV-SRAM) circuits are used as fundamental building blocks. Contribution to the Topical Issue “International Semiconductor Conference Dresden-Grenoble - ISCDG 2012”, Edited by Gérard Ghibaudo, Francis Balestra and Simon Deleonibus.

Nonvolatile resistive switching in Pt/laALO3/srTiO3 heterostructures

KAUST Repository

Wu, S.; Luo, X.; Turner, S.; Peng, H.; Lin, W.; Ding, J.; David, A.; Wang, B.; Van, Tendeloo, G.; Wang, J.; Wu, Tao

2013-01-01

Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures

Injection of electrons by colliding laser pulses in a laser wakefield accelerator

Energy Technology Data Exchange (ETDEWEB)

Hansson, M., E-mail: martin.hansson@fysik.lth.se; Aurand, B.; Ekerfelt, H.; Persson, A.; Lundh, O.

2016-09-01

To improve the stability and reproducibility of laser wakefield accelerators and to allow for future applications, controlling the injection of electrons is of great importance. This allows us to control the amount of charge in the beams of accelerated electrons and final energy of the electrons. Results are presented from a recent experiment on controlled injection using the scheme of colliding pulses and performed using the Lund multi-terawatt laser. Each laser pulse is split into two parts close to the interaction point. The main pulse is focused on a 2 mm diameter gas jet to drive a nonlinear plasma wave below threshold for self-trapping. The second pulse, containing only a fraction of the total laser energy, is focused to collide with the main pulse in the gas jet under an angle of 150°. Beams of accelerated electrons with low divergence and small energy spread are produced using this set-up. Control over the amount of accelerated charge is achieved by rotating the plane of polarization of the second pulse in relation to the main pulse. Furthermore, the peak energy of the electrons in the beams is controlled by moving the collision point along the optical axis of the main pulse, and thereby changing the acceleration length in the plasma. - Highlights: • Compact colliding pulse injection set-up used to produce low energy spread e-beams. • Beam charge controlled by rotating the polarization of injection pulse. • Peak energy controlled by point of collision to vary the acceleration length.

Generation and Transport of Hot Electrons in Cone-Wire Targets

Science.gov (United States)

Beg, Farhat

2009-11-01

We present results from a series of experiments where cone-wire targets in various configurations were employed both to assess hot electron coupling efficiency, and to reveal the source temperature of the hot electrons. Initial experiments were performed on the Vulcan petawatt laser at the Rutherford Appleton Laboratory and Titan laser at the Lawrence Livermore National Laboratory. Results with aluminum cones joined to Cu wires of diameters from 10 to 40 μm show that the laser coupling efficiency to electron energy within the wire is proportional to the cross sectional area of the wire. In addition, coupling into the wire was observed to decrease with the laser prepulse and cone-wall thickness. More recently, this study was extended, using the OMEGA EP laser. The resulting changes in coupling energy give indications of the scaling as we approach FI-relevant conditions. Requirements for FI scale fast ignition cone parameters: tip thickness, wall thickness, laser prepulse and laser pulse length, will be discussed. In collaboration with T. Yabuuchi, T. Ma, D. Higginson, H. Sawada, J. King, M.H. Key, K.U. Akli, Al Elsholz, D. Batani, H. Chen, R.R. Freeman, L. Gizzi, J. Green, S. Hatchett, D. Hey, P. Jaanimagi, J. Koch, K. L. Lancaster, D.Larson, A.J. MacKinnon, H. McLean, A. MacPhee, P.A. Norreys, P.K Patel, R. B. Stephens, W. Theobald, R. Town, M. Wei, S. Wilks, Roger Van Maren, B. Westover and L. VanWoerkom.

An Ultrasensitive Hot-Electron Bolometer for Low-Background SMM Applications

Science.gov (United States)

Olayaa, David; Wei, Jian; Pereverzev, Sergei; Karasik, Boris S.; Kawamura, Jonathan H.; McGrath, William R.; Sergeev, Andrei V.; Gershenson, Michael E.

2006-01-01

We are developing a hot-electron superconducting transition-edge sensor (TES) that is capable of counting THz photons and operates at T = 0.3K. The main driver for this work is moderate resolution spectroscopy (R approx. 1000) on the future space telescopes with cryogenically cooled (approx. 4 K) mirrors. The detectors for these telescopes must be background-limited with a noise equivalent power (NEP) approx. 10(exp -19)-10(exp -20) W/Hz(sup 1/2) over the range v = 0.3-10 THz. Above about 1 THz, the background photon arrival rate is expected to be approx. 10-100/s), and photon counting detectors may be preferable to an integrating type. We fabricated superconducting Ti nanosensors with a volume of approx. 3x10(exp -3) cubic microns on planar substrate and have measured the thermal conductance G to the thermal bath. A very low G = 4x10(exp -14) W/K, measured at 0.3 K, is due to the weak electron-phonon coupling in the material and the thermal isolation provided by superconducting Nb contacts. This low G corresponds to NEP(0.3K) = 3x10(exp -19) W/Hz(sup 1/2). This Hot-Electron Direct Detector (HEDD) is expected to have a sufficient energy resolution for detecting individual photons with v > 0.3 THz at 0.3 K. With the sensor time constant of a few microseconds, the dynamic range is approx. 50 dB.

Utilizing hot electrons

Energy Technology Data Exchange (ETDEWEB)

Nozik, Arthur J.

2018-03-01

In current solar cells, any photon energy exceeding the semiconductor bandgap is lost before being collected, limiting the cell performance. Hot carrier solar cells could avoid these losses. Now, a detailed experimental study and analysis shows that this strategy could lead to an improvement of the photoconversion efficiency in practice.

Origins and Scaling of Hot-Electron Preheat in Ignition-Scale Direct-Drive Inertial Confinement Fusion Experiments.

Science.gov (United States)

Rosenberg, M J; Solodov, A A; Myatt, J F; Seka, W; Michel, P; Hohenberger, M; Short, R W; Epstein, R; Regan, S P; Campbell, E M; Chapman, T; Goyon, C; Ralph, J E; Barrios, M A; Moody, J D; Bates, J W

2018-02-02

Planar laser-plasma interaction (LPI) experiments at the National Ignition Facility (NIF) have allowed access for the first time to regimes of electron density scale length (∼500 to 700  μm), electron temperature (∼3 to 5 keV), and laser intensity (6 to 16×10^{14}  W/cm^{2}) that are relevant to direct-drive inertial confinement fusion ignition. Unlike in shorter-scale-length plasmas on OMEGA, scattered-light data on the NIF show that the near-quarter-critical LPI physics is dominated by stimulated Raman scattering (SRS) rather than by two-plasmon decay (TPD). This difference in regime is explained based on absolute SRS and TPD threshold considerations. SRS sidescatter tangential to density contours and other SRS mechanisms are observed. The fraction of laser energy converted to hot electrons is ∼0.7% to 2.9%, consistent with observed levels of SRS. The intensity threshold for hot-electron production is assessed, and the use of a Si ablator slightly increases this threshold from ∼4×10^{14} to ∼6×10^{14}  W/cm^{2}. These results have significant implications for mitigation of LPI hot-electron preheat in direct-drive ignition designs.

Novel multi-chromophor light absorber concepts for DSSCs for efficient electron injection

Energy Technology Data Exchange (ETDEWEB)

Schuetz, Robert; Strothkaemper, Christian; Bartelt, Andreas; Hannappel, Thomas; Eichberger, Rainer [Helmholtz-Zentrum Berlin fuer Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Fasting, Carlo [Institut fuer Organische Chemie, Freie Universitaet Berlin, Takustrasse 3, 14195 Berlin (Germany); Thomas, Inara [Helmholtz-Zentrum Berlin fuer Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Institut fuer Organische Chemie, Freie Universitaet Berlin, Takustrasse 3, 14195 Berlin (Germany)

2011-07-01

Dye sensitized solar cells (DSSCs) operate by injecting electrons from the excited state of a light-harvesting dye into the continuum of conduction band states of a wide bandgap semiconductor. The light harvesting efficiency of pure organic dyes is limited by a narrow spectral electronic transition. A beneficial broad ground state absorption in the VIS region can be achieved by applying a single molecular dye system with multiple chromophors involving a Foerster resonance energy transfer (FRET) mechanism for an efficient electron injection. A model donor acceptor dye system capable for FRET chemically linked to colloidal TiO{sub 2} and ZnO nanorod surfaces was investigated in UHV environment. We used VIS/NIR femtosecond transient absorption spectroscopy and optical pump terahertz probe spectroscopy to study the charge injection dynamics of the antenna system. Different chromophors attached to a novel scaffold/anchor system connecting the organic absorber unit to the metal oxide semiconductor were probed.

Analysis of a High-Tc Hot-Electron Superconducting Mixer for Terahertz Applications

Science.gov (United States)

Karasik, B. S.; McGrath, W. R.; Gaidis, M. C.

1996-01-01

The prospects of a YBa2Cu3O7(delta)(YBCO) hot-electron bolometer (HEB) mixer for a THz heterodyne receiver is discussed. The modeled device is a submicron bridge made from a 10 nm thick film on a high thermal conductance substrate.

Hot electron effect in the dc SQUID

International Nuclear Information System (INIS)

Wellstood, F.C.; Clarke, J.; Urbina, C.

1989-01-01

The authors have investigated the temperature dependence of the noise in thin-film dc Superconducting Quantum Interference Devices (SQUIDs) down to 20 mK. The white noise measured in the early versions of our SQUIDs did not decrease as the bath temperature was lowered below 150 mK. They have attributed this saturation to a hot electron effect in the thin-film AuCu resistors shunting the Josephson junctions. A theoretical investigation showed that the temperature of the electrons in the shunts should be given by T/sub e/ = (P/ΣΩ)/sup 1/5/, where P is the power dissipated in the shunts, Ω is the shunt volume, and Σ is a proportionality constant. Experimentally, the authors found Σ=(2.4+-0.6)X10/sup 9/WK/sup -5/m/sup -3/. They have redesigned the shunts, adding large thin-film cooling fins, to increase their volume substantially. This technique has reduced T/sub e/ to about 50 mK, with a corresponding improvement in the sensitivity of the SQUIDs

Electron self-injection and trapping into an evolving plasma bubble.

Science.gov (United States)

Kalmykov, S; Yi, S A; Khudik, V; Shvets, G

2009-09-25

The blowout (or bubble) regime of laser wakefield acceleration is promising for generating monochromatic high-energy electron beams out of low-density plasmas. It is shown analytically and by particle-in-cell simulations that self-injection of the background plasma electrons into the quasistatic plasma bubble can be caused by slow temporal expansion of the bubble. Sufficient criteria for the electron trapping and bubble's expansion rate are derived using a semianalytic nonstationary Hamiltonian theory. It is further shown that the combination of bubble's expansion and contraction results in monoenergetic electron beams.

Fabrication of High-T(sub c) Hot-Electron Bolometric Mixers for Terahertz Applications

Science.gov (United States)

Burns, M. J.; Kleinsasser, A. W.; Delin, K. A.; Vasquez, R. P.; Karasik, B. S.; McGrath, W. R.; Gaidis, M. C.

1996-01-01

Superocnducting hot-electron bolometers (HEB) represent a promising candidate for heterodyne mixing at frequencies exceeding 1 THz. Nb HEB mixers offer performance competitive with tunnel junctions without the frequency limit imposed by the superconducting energy gap.

Collective plasma effects associated with the continuous injection model of solar flare particle streams

International Nuclear Information System (INIS)

Vlahos, L.; Paradopoulos, K.

1979-01-01

A modified continous injection model for impulsive solar flares that includes self-consistently plasma nonlinearities based on the concept of marginal stability is presented. A quasi-stationary state is established, composed of a hot truncated electron Maxwellian distribution confined by acoustic turbulence on the top of the loop and energetic electron beams precipitating in the chromosphere. It is shown that the radiation properties of the models are in accordance with observations

Collective plasma effects associated with the continuous injection model of solar flare particle streams

Science.gov (United States)

Vlahos, L.; Papadopoulos, K.

1979-01-01

A modified continuous injection model for impulsive solar flares that includes self-consistent plasma nonlinearities based on the concept of marginal stability is presented. A quasi-stationary state is established, composed of a hot truncated electron Maxwellian distribution confined by acoustic turbulence on the top of the loop and energetic electron beams precipitating in the chromosphere. It is shown that the radiation properties of the model are in accordance with observations.

Parameter Dependence of Inward Diffusion on Injected Electrons in Helical Non-Neutral Plasmas

International Nuclear Information System (INIS)

Wakabayashi, H.; Himura, H.; Fukao, M.; Yoshida, Z.

2003-01-01

Experimental studies on an electron injection into a helical magnetic field and characteristics of non-neutral plasmas have been performed. It is found that the space potential φs has a weak dependence on the injection angle except for a narrow 'window' region in which φs significantly drops. A calculation shows that because of the electric field Eg of the electron gun (e-gun), the emitted electrons are launched quasi-parallel to the helical magnetic field B, regardless of α. This seems to agree with the observation. The 'window' seen in the data may be attributed to an current-driven instability which might result in the insufficient electron penetration or the degradation of electron confinement in the magnetic surface

Design of nanophotonic, hot-electron solar-blind ultraviolet detectors with a metal-oxide-semiconductor structure

International Nuclear Information System (INIS)

Wang, Zhiyuan; Wang, Xiaoxin; Liu, Jifeng

2014-01-01

Solar-blind ultraviolet (UV) detection refers to photon detection specifically in the wavelength range of 200 nm–320 nm. Without background noises from solar radiation, it has broad applications from homeland security to environmental monitoring. The most commonly used solid state devices for this application are wide band gap (WBG) semiconductor photodetectors (Eg > 3.5 eV). However, WBG semiconductors are difficult to grow and integrate with Si readout integrated circuits (ROICs). In this paper, we design a nanophotonic metal-oxide-semiconductor structure on Si for solar-blind UV detectors. Instead of using semiconductors as the active absorber, we use Sn nano-grating structures to absorb UV photons and generate hot electrons for internal photoemission across the Sn/SiO 2 interfacial barrier, thereby generating photocurrent between the metal and the n-type Si region upon UV excitation. Moreover, the transported hot electron has an excess kinetic energy >3 eV, large enough to induce impact ionization and generate another free electron in the conduction band of n-Si. This process doubles the quantum efficiency. On the other hand, the large metal/oxide interfacial energy barrier (>3.5 eV) also enables solar-blind UV detection by blocking the less energetic electrons excited by visible photons. With optimized design, ∼75% UV absorption and hot electron excitation can be achieved within the mean free path of ∼20 nm from the metal/oxide interface. This feature greatly enhances hot electron transport across the interfacial barrier to generate photocurrent. The simple geometry of the Sn nano-gratings and the MOS structure make it easy to fabricate and integrate with Si ROICs compared to existing solar-blind UV detection schemes. The presented device structure also breaks through the conventional notion that photon absorption by metal is always a loss in solid-state photodetectors, and it can potentially be extended to other active metal photonic devices. (paper)

Identification of conduction and hot electron property in ZnS, ZnO and SiO2

International Nuclear Information System (INIS)

Huang Jinzhao; Xu Zheng; Zhao Suling; Li Yuan; Yuan Guangcai; Wang Yongsheng; Xu Xurong

2007-01-01

The impact excitation and ionization is the most important process in layered optimization scheme and solid state cathodoluminescence. The conduction property (semiconductor property) of SiO 2 , ZnS and ZnO is studied based on organic/inorganic electroluminescence. The hot electron property (acceleration and multiplication property) of SiO 2 and ZnS is investigated based on the solid state cathodoluminescence. The results show that the SiO 2 has the fine hot electron property and the conduction property is not as good as ZnO and ZnS

Spin injection into a two-dimensional electron gas using inter-digital-ferromagnetic contacts

DEFF Research Database (Denmark)

Hu, C.M.; Nitta, J.; Jensen, Ane

2002-01-01

We present a model that describes the spin injection across a single interface with two electrodes. The spin-injection rate across a typical hybrid junction made of ferromagnet (FM) and a two-dimensional electron gas (2DEG) is found at the percentage level. We perforin spin-injection-detection ex......-injection-detection experiment on devices with two ferromagnetic contacts on a 2DEG confined in an InAs quantum well. A spin-injection rate of 4.5% is estimated from the measured magnetoresistance....

Low-power non-volatile spintronic memory: STT-RAM and beyond

International Nuclear Information System (INIS)

Wang, K L; Alzate, J G; Khalili Amiri, P

2013-01-01

The quest for novel low-dissipation devices is one of the most critical for the future of semiconductor technology and nano-systems. The development of a low-power, universal memory will enable a new paradigm of non-volatile computation. Here we consider STT-RAM as one of the emerging candidates for low-power non-volatile memory. We show different configurations for STT memory and demonstrate strategies to optimize key performance parameters such as switching current and energy. The energy and scaling limits of STT-RAM are discussed, leading us to argue that alternative writing mechanisms may be required to achieve ultralow power dissipation, a necessary condition for direct integration with CMOS at the gate level for non-volatile logic purposes. As an example, we discuss the use of the giant spin Hall effect as a possible alternative to induce magnetization reversal in magnetic tunnel junctions using pure spin currents. Further, we concentrate on magnetoelectric effects, where electric fields are used instead of spin-polarized currents to manipulate the nanomagnets, as another candidate solution to address the challenges of energy efficiency and density. The possibility of an electric-field-controlled magnetoelectric RAM as a promising candidate for ultralow-power non-volatile memory is discussed in the light of experimental data demonstrating voltage-induced switching of the magnetization and reorientation of the magnetic easy axis by electric fields in nanomagnets. (paper)

Reliable determination of the Cu/n-Si Schottky barrier height by using in-device hot-electron spectroscopy

International Nuclear Information System (INIS)

Parui, Subir; Atxabal, Ainhoa; Ribeiro, Mário; Bedoya-Pinto, Amilcar; Sun, Xiangnan; Llopis, Roger; Casanova, Fèlix; Hueso, Luis E.

2015-01-01

We show the operation of a Cu/Al 2 O 3 /Cu/n-Si hot-electron transistor for the straightforward determination of a metal/semiconductor energy barrier height even at temperatures below carrier-freeze out in the semiconductor. The hot-electron spectroscopy measurements return a fairly temperature independent value for the Cu/n-Si barrier of 0.66 ± 0.04 eV at temperatures below 180 K, in substantial accordance with mainstream methods based on complex fittings of either current-voltage (I-V) and capacitance-voltage (C-V) measurements. The Cu/n-Si hot-electron transistors exhibit an OFF current of ∼2 × 10 −13  A, an ON/OFF ratio of ∼10 5 , and an equivalent subthreshold swing of ∼96 mV/dec at low temperatures, which are suitable values for potential high frequency devices

Efficient scattering of electrons below few keV by Time Domain Structures around injection fronts

Science.gov (United States)

Vasko, I.; Agapitov, O. V.; Mozer, F.; Artemyev, A.; Krasnoselskikh, V.

2016-12-01

Van Allen Probes observations show an abundance of non-linear large-amplitude electrostatic spikes around injection fronts in the outer radiation belt. These spikes referred to as Time Domain Structures (TDS) include electron holes, double layers and more complicated solitary waves. The electron scattering driven by TDS may not be evaluated via the standard quasi-linear theory, since TDS are in principle non-linear plasma modes. In this paper we analyze the scattering of electrons by three-dimensional TDS (with non-negligible perpendicular electric field) around injection fronts. We derive the analytical formulas describing the local scattering by single TDS and show that the most efficiently scattered electrons are those in the first cyclotron resonance (electrons crossing TDS on a time scale comparable with their gyroperiod). The analytical formulas are verified via the test-particle simulation. We compute the bounce-averaged diffusion coefficients and demonstrate their dependence on the TDS spatial distribution, individual TDS parameters and L shell. We show that TDS are able to provide the pitch-angle scattering of <5 keV electrons at rate 10-2-10-4 s-1 and, thus, can be responsible for driving loss of electrons out of injections fronts on a time scale from few minutes to few hours. TDS can be, thus, responsible for driving diffuse aurora precipitations conjugated to injection fronts. We show that the pitch-angle scattering rates driven by TDS are comparable with those due to chorus waves and exceed those due to electron cyclotron harmonics. For injections fronts with no significant wave activity in the frequency range corresponding to chorus waves, TDS can be even dominant mechanism for losses of below few keV electrons.

Dissipation of post-disruption runaway electron plateaus by shattered pellet injection in DIII-D

Science.gov (United States)

Shiraki, D.; Commaux, N.; Baylor, L. R.; Cooper, C. M.; Eidietis, N. W.; Hollmann, E. M.; Paz-Soldan, C.; Combs, S. K.; Meitner, S. J.

2018-05-01

We report on the first demonstration of dissipation of fully avalanched post-disruption runaway electron (RE) beams by shattered pellet injection in the DIII-D tokamak. Variation of the injected species shows that dissipation depends strongly on the species mixture, while comparisons with massive gas injection do not show a significant difference between dissipation by pellets or by gas, suggesting that the shattered pellet is rapidly ablated by the relativistic electrons before significant radial penetration into the runaway beam can occur. Pure or dominantly neon injection increases the RE current dissipation through pitch-angle scattering due to collisions with impurity ions. Deuterium injection is observed to have the opposite effect from neon, reducing the high-Z impurity content and thus decreasing the dissipation, and causing the background thermal plasma to completely recombine. When injecting mixtures of the two species, deuterium levels as low as  ∼10% of the total injected atoms are observed to adversely affect the resulting dissipation, suggesting that complete elimination of deuterium from the injection may be important for optimizing RE mitigation schemes.

Highly Stretchable Non-volatile Nylon Thread Memory

Science.gov (United States)

Kang, Ting-Kuo

2016-04-01

Integration of electronic elements into textiles, to afford e-textiles, can provide an ideal platform for the development of lightweight, thin, flexible, and stretchable e-textiles. This approach will enable us to meet the demands of the rapidly growing market of wearable-electronics on arbitrary non-conventional substrates. However the actual integration of the e-textiles that undergo mechanical deformations during both assembly and daily wear or satisfy the requirements of the low-end applications, remains a challenge. Resistive memory elements can also be fabricated onto a nylon thread (NT) for e-textile applications. In this study, a simple dip-and-dry process using graphene-PEDOT:PSS (poly(3,4-ethylenedioxythiophene) polystyrene sulfonate) ink is proposed for the fabrication of a highly stretchable non-volatile NT memory. The NT memory appears to have typical write-once-read-many-times characteristics. The results show that an ON/OFF ratio of approximately 103 is maintained for a retention time of 106 s. Furthermore, a highly stretchable strain and a long-term digital-storage capability of the ON-OFF-ON states are demonstrated in the NT memory. The actual integration of the knitted NT memories into textiles will enable new design possibilities for low-cost and large-area e-textile memory applications.

Quantum noise in a terahertz hot electron bolometer mixer

OpenAIRE

Zhang, W.; Khosropanah, P.; Gao, J. R.; Kollberg, E. L.; Yngvesson, K. S.; Bansal, T.; Barends, R.; Klapwijk, T. M.

2010-01-01

We have measured the noise temperature of a single, sensitive superconducting NbN hot electron bolometer (HEB) mixer in a frequency range from 1.6 to 5.3 THz, using a setup with all the key components in vacuum. By analyzing the measured receiver noise temperature using a quantum noise (QN) model for HEB mixers, we confirm the effect of QN. The QN is found to be responsible for about half of the receiver noise at the highest frequency in our measurements. The ?-factor (the quantum efficiency ...

All-inorganic perovskite nanocrystal assisted extraction of hot electrons and biexcitons from photoexcited CdTe quantum dots.

Science.gov (United States)

Mondal, Navendu; De, Apurba; Samanta, Anunay

2018-01-03

Excitation of semiconductor quantum dots (QDs) by photons possessing energy higher than the band-gap creates a hot electron-hole pair, which releases its excess energy as waste heat or under certain conditions (when hν > 2E g ) produces multiple excitons. Extraction of these hot carriers and multiple excitons is one of the key strategies for enhancing the efficiency of QD-based photovoltaic devices. However, this is a difficult task as competing carrier cooling and relaxation of multiple excitons (through Auger recombination) are ultrafast processes. Herein, we study the potential of all-inorganic perovskite nanocrystals (NCs) of CsPbX 3 (X = Cl, Br) as harvesters of these short-lived species from photo-excited CdTe QDs. The femtosecond transient absorption measurements show CsPbX 3 mediated extraction of both hot and thermalized electrons of the QDs (under a low pump power) and (under a high pump fluence) extraction of multiple excitons prior to their Auger assisted recombination. A faster timescale of thermalized electron transfer (∼2 ps) and a higher extraction efficiency of hot electrons (∼60%) are observed in the presence of CsPbBr 3 . These observations demonstrate the potential of all-inorganic perovskite NCs in the extraction of these short-lived energy rich species implying that complexes of the QDs and perovskite NCs are better suited for improving the efficiency of QD-sensitized solar cells.

Synergetic effects of radiation stress and hot-carrier stress on the current gain of npn bipolar junction transistors

International Nuclear Information System (INIS)

Witczak, S.C.; Kosier, S.L.; Schrimpf, R.D.; Galloway, K.F.

1994-01-01

The combined effects of ionizing radiation and hot-carrier stress on the current gain of npn bipolar junction transistors were investigated. The analysis was carried out experimentally by examining the consequences of interchanging the order in which the two stress types were applied to identical transistors which were stressed to various levels of damage. The results indicate that the hot-carrier response of the transistor is improved by radiation damage, whereas hot-carrier damage has little effect on subsequent radiation stress. Characterization of the temporal progression of hot-carrier effects revealed that hot-carrier stress acts initially to reduce excess base current and improve current gain in irradiated transistors. PISCES simulations show that the magnitude of the peak electric-field within the emitter-base depletion region is reduced significantly by net positive oxide charges induced by radiation. The interaction of the two stress types is explained in a qualitative model based on the probability of hot-carrier injection determined by radiation damage and on the neutralization and compensation of radiation-induced positive oxide charges by injected electrons. The result imply that a bound on damage due to the combined stress types is achieved when hot-carrier stress precedes any irradiation

Development of a pattern hot cell for production of injectable radiopharmaceuticals

International Nuclear Information System (INIS)

Campos, Fabio Eduardo de

2010-01-01

A controlled ambient should be established to the production/processing of materials susceptible to contamination, like injectable pharmaceuticals, in order to agree with normative and regulatory requirements. Considering medical but also toxic, radioactive and dangerous products, the ambient should work in special conditions to assure that the materials, which in same cases can be also volatile, do not escape to the external ambient, working in a selective, secure and controlled way. The conditions recommended by local and international rules in use, report an negative pressured ambient in relation to the adjacent areas. The technology related with the sizing of project to this kind of system is fully described in the literature, taking in account the rules that clearly describe the essential requirements. However, it is necessary to develop a controlled ambient for radiopharmaceutical production, in a way compatible with the concept of clean rooms and with the safety related to the manipulation of open radioactive wastes. In this work, some devices were created, methods and procedures were established making possible the classification of the ambient inside the hot cell, without physical barriers in the area, using ergonomic, flexible and practical conditions of work, that can results in the improvement of the productivity. The project resulted in the creation of a controlled ambient, in agreement with the normative requirements, using a pass through for entrance and exit of the materials, without compromise the internal air condition. The tight of the hot cell was obtained using doors with efficient sealing system and active joints. Tong manipulators were used to produce ergonomic and secure conditions, without compromise the internal conditions related to tight and classification in A and B grade, according to local and international rules. An efficient ventilation/exhaustion system was adopted to produce these results, composed by filters and special devices

Injection control development of the JT-60U electron cyclotron heating system

Energy Technology Data Exchange (ETDEWEB)

Hiranai, Shinichi; Shinozaki, Shin-ichi; Yokokura, Kenji; Moriyama, Shinichi [Japan Atomic Energy Research Inst., Naka, Ibaraki (Japan). Naka Fusion Research Establishment; Sato, Fumiaki [Nippon Advanced Technology Co., Ltd., Tokai, Ibaraki (Japan); Suzuki, Yasuo [Atomic Energy General Service Co., Ltd., Tokai, Ibaraki (Japan); Ikeda, Yoshitaka [Japan Atomic Energy Research Inst., Kashiwa, Chiba (Japan)

2003-03-01

The JT-60U electron cyclotron heating (ECH) System injects a millimeteric wave at 110 GHz into the JT-60 Plasma, and heats the plasma or drives a current locally to enhance the confinement performance of the JT-60 plasma. The system consists of four sets of high power gyrotrons, high voltage power supplies and transmission lines, and two antennas that launch electron cyclotron (EC) beams toward the plasma. The key features of the injection control system are streering of the direction of the EC beam by driving the movable mirror in the antenna, and capability to set any combination of polarization angle and ellipticity by rotating the two grooved mirrors in the polarizers. This report represents the design, fabrication and improvements of the injection control system. (author)

Precipitated Fluxes of Radiation Belt Electrons via Injection of Whistler-Mode Waves

Science.gov (United States)

Kulkarni, P.; Inan, U. S.; Bell, T. F.

2005-12-01

Inan et al. (U.S. Inan et al., Controlled precipitation of radiation belt electrons, Journal of Geophysical Research-Space Physics, 108 (A5), 1186, doi: 10.1029/2002JA009580, 2003.) suggested that the lifetime of energetic (a few MeV) electrons in the inner radiation belts may be moderated by in situ injection of whistler mode waves at frequencies of a few kHz. We use the Stanford 2D VLF raytracing program (along with an accurate estimation of the path-integrated Landau damping based on data from the HYDRA instrument on the POLAR spacecraft) to determine the distribution of wave energy throughout the inner radiation belts as a function of injection point, wave frequency and injection wave normal angle. To determine the total wave power injected and its initial distribution in k-space (i.e., wave-normal angle), we apply the formulation of Wang and Bell ( T.N.C. Wang and T.F. Bell, Radiation resistance of a short dipole immersed in a cold magnetoionic medium, Radio Science, 4 (2), 167-177, February 1969) for an electric dipole antenna placed at a variety of locations throughout the inner radiation belts. For many wave frequencies and wave normal angles the results establish that most of the radiated power is concentrated in waves whose wave normals are located near the resonance cone. The combined use of the radiation pattern and ray-tracing including Landau damping allows us to make quantitative estimates of the magnetospheric distribution of wave power density for different source injection points. We use these results to estimate the number of individual space-based transmitters needed to significantly impact the lifetimes of energetic electrons in the inner radiation belts. Using the wave power distribution, we finally determine the energetic electron pitch angle scattering and the precipitated flux signatures that would be detected.

Measurements of non-volatile aerosols with a VTDMA and their correlations with carbonaceous aerosols in Guangzhou, China

Science.gov (United States)

Cheung, Heidi H. Y.; Tan, Haobo; Xu, Hanbing; Li, Fei; Wu, Cheng; Yu, Jian Z.; Chan, Chak K.

2016-07-01

Simultaneous measurements of aerosol volatility and carbonaceous matters were conducted at a suburban site in Guangzhou, China, in February and March 2014 using a volatility tandem differential mobility analyzer (VTDMA) and an organic carbon/elemental carbon (OC / EC) analyzer. Low volatility (LV) particles, with a volatility shrink factor (VSF) at 300 °C exceeding 0.9, contributed 5 % of number concentrations of the 40 nm particles and 11-15 % of the 80-300 nm particles. They were composed of non-volatile material externally mixed with volatile material, and therefore did not evaporate significantly at 300 °C. Non-volatile material mixed internally with the volatile material was referred to as medium volatility (MV, 0.4 transported at low altitudes (below 1500 m) for over 40 h before arrival. Further comparison with the diurnal variations in the mass fractions of EC and the non-volatile OC in PM2.5 suggests that the non-volatile residuals may be related to both EC and non-volatile OC in the afternoon, during which the concentration of aged organics increased. A closure analysis of the total mass of LV and MV residuals and the mass of EC or the sum of EC and non-volatile OC was conducted. It suggests that non-volatile OC, in addition to EC, was one of the components of the non-volatile residuals measured by the VTDMA in this study.

Reliable determination of the Cu/n-Si Schottky barrier height by using in-device hot-electron spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Parui, Subir, E-mail: s.parui@nanogune.eu, E-mail: l.hueso@nanogune.eu; Atxabal, Ainhoa; Ribeiro, Mário; Bedoya-Pinto, Amilcar; Sun, Xiangnan; Llopis, Roger [CIC nanoGUNE, 20018 Donostia-San Sebastian, Basque Country (Spain); Casanova, Fèlix; Hueso, Luis E., E-mail: s.parui@nanogune.eu, E-mail: l.hueso@nanogune.eu [CIC nanoGUNE, 20018 Donostia-San Sebastian, Basque Country (Spain); IKERBASQUE, Basque Foundation for Science, 48011 Bilbao, Basque Country (Spain)

2015-11-02

We show the operation of a Cu/Al{sub 2}O{sub 3}/Cu/n-Si hot-electron transistor for the straightforward determination of a metal/semiconductor energy barrier height even at temperatures below carrier-freeze out in the semiconductor. The hot-electron spectroscopy measurements return a fairly temperature independent value for the Cu/n-Si barrier of 0.66 ± 0.04 eV at temperatures below 180 K, in substantial accordance with mainstream methods based on complex fittings of either current-voltage (I-V) and capacitance-voltage (C-V) measurements. The Cu/n-Si hot-electron transistors exhibit an OFF current of ∼2 × 10{sup −13} A, an ON/OFF ratio of ∼10{sup 5}, and an equivalent subthreshold swing of ∼96 mV/dec at low temperatures, which are suitable values for potential high frequency devices.

A Hot-electron Direct Detector for Radioastronomy

Science.gov (United States)

Karasik, B. S.; McGrath, W. R.; LeDuc, H. G.

2000-01-01

A new approach is proposed to improve the sensitivity of direct-detection bolometers. The idea is to adjust a speed of the thermal relaxation of hot-electrons in a nanometer size normal metal or superconductive transition edge bolometer by controlling the elastic electron mean free path. If the bolometer contacts are made of a superconductor with high critical temperature then the thermal diffusion into the contacts is absent because of the Andreev's reflection and the electron-phonon relaxation is the only mechanism for heat removal. The relaxation rate should behave as 7(exp 4)l at subkelvin temperatures (l is the electron elastic mean free path) and can be reduced by factor of 10 - 100 by decreasing l. Then an antenna- or waveguide-coupled bolometer with a time constant approx. 10(exp -3) to 10(exp -5) S at T approx. = 0.1 - 0.3 K will exhibit photon-noise limited performance in millimeter and subn-millimeter range. The bolometer will have a figure-of-merit NEk square root of tau approx. = 10(exp -22) 10(exp -21) W/Hz at 100 mK which is 10(exp 3) times smaller than that of a state-of-the-art bolometer. This will allow for a tremendous increase in speed which will have a significant impact for observational mapping applications. Alternatively, the bolometer could operate at higher temperature with still superior sensitivity This research was performed by the Center for Space Microelectronics Technology, JPL, California Institute of Technology, under the contract for NASA.

Hot Electron Generation and Transport Using Kα Emission

International Nuclear Information System (INIS)

Akli, K.U.; Stephens, R.B.; Key, M.H.; Bartal, T.; Beg, F.N.; Chawla, S.; Chen, C.D.; Fedosejevs, R.; Freeman, R.R.; Friesen, H.; Giraldez, E.; Green, J.S.; Hey, D.S.; Higginson, D.P.; Hund, J.; Jarrott, L.C.; Kemp, G.E.; King, J.A.; Kryger, A.; Lancaster, K.; LePape, S.; Link, A.; Ma, T.; Mackinnon, A.J.; MacPhee, A.G.; McLean, H.S.; Murphy, C.; Norreys, P.A.; Ovchinnikov, V.; Patel, P.K.; Ping, Y.; Sawada, H.; Schumacher, D.; Theobald, W.; Tsui, Y.Y.; Van Woerkom, L.D.; Wei, M.S.; Westover, B.; Yabuuchi, T.

2010-01-01

We have conducted experiments on both the Vulcan and Titan laser facilities to study hot electron generation and transport in the context of fast ignition. Cu wires attached to Al cones were used to investigate the effect on coupling efficiency of plasma surround and the pre-formed plasma inside the cone. We found that with thin cones 15% of laser energy is coupled to the 40(micro)m diameter wire emulating a 40(micro)m fast ignition spot. Thick cone walls, simulating plasma in fast ignition, reduce coupling by x4. An increase of prepulse level inside the cone by a factor of 50 reduces coupling by a factor of 3.

Fermi-degeneracy and discrete-ion effects in the spherical-cell model and electron-electron correlation effects in hot dense plasmas

International Nuclear Information System (INIS)

Furukawa, H.; Nishihara, K.

1992-01-01

The spherical-cell model [F. Perrot, Phys. Rev. A 25, 489 (1982); M. W. C. Dharma-wardana and F. Perrot, ibid. 26, 2096 (1982)] is improved to investigate laser-produced hot, dense plasmas. The free-electron distribution function around a test free electron is calculated by using the Fermi integral in order that the free-electron--free-electron correlation function includes Fermi-degeneracy effects, and also that the calculation includes the discrete-ion effect. The free-electron--free-electron, free-electron--ion, and ion-ion correlation effects are coupled, within the framework of the hypernetted-chain approximation, through the Ornstein-Zernike relation. The effective ion-ion potential includes the effect of a spatial distribution of bound electrons. The interparticle correlation functions and the effective potential acting on either an electron or an ion in hot, dense plasmas are calculated numerically. The Fermi-degeneracy effect on the correlation functions between free electrons becomes clear for the degeneracy parameter θ approx-lt 1. The discrete-ion effect in the calculation of the correlation functions between free electrons affects the electron-ion pair distribution functions for r s approx-gt 3. As an application of the proposed model, the strong-coupling effect on the stopping power of charged particles [Xin-Zhong Yan, S. Tanaka, S. Mitake, and S. Ichimaru, Phys. Rev. A 32, 1785 (1985)] is estimated. While the free-electron--ion strong-coupling effect and the Fermi-degeneracy effect incorporated in the calculation of the free-electron distribution function around a test free electron enhance the stopping number, the quantum-diffraction effect incorporated in the quantal hypernetted-chain equations [J. Chihara, Prog. Theor. Phys. 72, 940 (1984); Phys. Rev. A 44, 1247 (1991); J. Phys. Condens. Matter 3, 8715 (1991)] reduces the stopping number substantially

Formation of hot spots in a superconductor observed by low-temperature scanning electron microscopy

International Nuclear Information System (INIS)

Eichele, R.; Seifert, H.; Huebener, R.P.

1981-01-01

Low-temperature scanning electron microscopy can be used for the direct observation of hot spots in a superconductor. Experiments performed at 2.10 K with tim films demonstrating the method are reported

Hot phonon generation by split-off hole band electrons in AlxGa1-xAs alloys investigated by picosecond Raman scattering

International Nuclear Information System (INIS)

Jacob, J.M.; Kim, D.S.; Zhou, J.F.; Song, J.J.

1992-01-01

The initial generation of hot LO phonons by the relaxation of hot carriers in GaAs and Al x Ga 1-x As alloy semiconductors is studied. Within the initial 2ps of photoexcitation, only those electrons originating from the split-off hole bands are found to generate a significant number of I-valley hot phonons when photon energies of 2.33eV are used. A picosecond Raman scattering technique is used to determine the hot phonon occupation number in a series of MBE grown Al x Ga 1-x As samples with 0≤x≤0.39. The Stokes and anti-Stokes lines were measured for both GaAs-like and AlAs-like LO phonon modes to determine their occupation numbers. The authors observe a rapid decrease in the phonon occupation numbers as the aluminum concentration increases beyond x = 0.2. This rapid decrease is explained by considering only those electrons photoexcited from the split-off hole band. Almost all of the electrons originating from the heavy and light-hole bands are shown to quickly transfer and remain in the X and L valleys without generating significant numbers of hot LO phonons during the initial 2ps and at a carrier density of 10 17 cm -3 . A model based upon the instantaneous thermalization of hot electrons photoexcited from the split-off hole bands is used to fit the data. They have obtained very good agreement between experiment and theory. This work provides a clear understanding to the relaxation of Γ valley hot electrons by the generation of hot phonons on subpicosecond and picosecond time scales, which has long standing implications to previous time resolved Raman experiments

Carbon nanotube network-silicon oxide non-volatile switches.

Science.gov (United States)

Liao, Albert D; Araujo, Paulo T; Xu, Runjie; Dresselhaus, Mildred S

2014-12-08

The integration of carbon nanotubes with silicon is important for their incorporation into next-generation nano-electronics. Here we demonstrate a non-volatile switch that utilizes carbon nanotube networks to electrically contact a conductive nanocrystal silicon filament in silicon dioxide. We form this device by biasing a nanotube network until it physically breaks in vacuum, creating the conductive silicon filament connected across a small nano-gap. From Raman spectroscopy, we observe coalescence of nanotubes during breakdown, which stabilizes the system to form very small gaps in the network~15 nm. We report that carbon nanotubes themselves are involved in switching the device to a high resistive state. Calculations reveal that this switching event occurs at ~600 °C, the temperature associated with the oxidation of nanotubes. Therefore, we propose that, in switching to a resistive state, the nanotube oxidizes by extracting oxygen from the substrate.

Interpretation of the electron cyclotron emission of hot ASDEX upgrade plasmas at optically thin frequencies

Energy Technology Data Exchange (ETDEWEB)

Denk, Severin Sebastian; Stroth, Ulrich [Max-Planck-Institut fuer Plasmaphysik, D-85748 Garching (Germany); Physik-Department E28, Technische Universitaet Muenchen, 85748 Garching (Germany); Fischer, Rainer; Poli, Emanuele; Willensdorfer, Matthias; Maj, Omar; Stober, Joerg; Suttrop, Wolfgang [Max-Planck-Institut fuer Plasmaphysik, D-85748 Garching (Germany); Collaboration: The ASDEX Upgrade Team

2016-07-01

The electron cyclotron emission diagnostic (ECE) provides routinely electron temperature (T{sub e}) measurements. ''Kinetic effects'' (relativistic mass shift and Doppler shift) can cause the measured radiation temperatures (T{sub rad}) to differ from T{sub e} at cold resonance position complicating the determination of T{sub e} from the measured radiation temperature profile (T{sub rad}). For the interpretation of such ECE measurements an electron cyclotron forward model solving the radiation transport equation for given T{sub e} and electron density profiles is in use in the framework of Integrated Data Analysis at ASDEX Upgrade. While the original model lead to improved T{sub e} profiles near the plasma edge in moderately hot H-mode discharges, vacuum approximations in the model lead to inaccuracies given large T{sub e}. In hot plasmas ''wave-plasma interaction'', i.e. the dielectric effect of the background plasma onto the electron cyclotron emission, becomes important at optical thin measured frequencies. Additionally, given moderate electron densities and large T{sub e}, the refraction of the line of sight has to be considered for the interpretation of ECE measurements with low optical depth.

Atmospheric Signatures and Effects of Space-based Relativistic Electron Beam Injection

Science.gov (United States)

Marshall, R. A.; Sanchez, E. R.; Kero, A.; Turunen, E. S.; Marsh, D. R.

2017-12-01

Future relativistic electron beam injection experiments have the potential to provide groundbreaking insights into the physics of wave-particle interactions and beam-neutral interactions, relevant to space physics and to fundamental plasma physics. However, these experiments are only useful if their signatures can be detected. In this work, we use a physics-based forward modeling framework to investigate the observable signatures of a relativistic beam interacting with the upper atmosphere. The modeling framework is based around the Electron Precipitation Monte Carlo (EPMC) model, used to simulate electron precipitation in the upper atmosphere. That model is coupled to physics-based models of i) optical emission production; ii) bremsstrahlung photon production and propagation; iii) D-region ion chemistry; and iv) VLF wave propagation in the Earth-ionosphere waveguide. Using these modeling tools, we predict the optical, X-ray, chemical, radar, and VLF signatures of a realistic beam injection, based on recent space-based accelerator designs. In particular, we inject a beam pulse of 10 mA for a duration of 500 μs at an energy of 1 MeV, providing a total pulse energy of 5 J. We further investigate variations in these parameters, in particular the total energy and the electron energy. Our modeling shows that for this 5 J pulse injection at 1 MeV electron energy, the optical signal is easily detectable from the ground in common emission bands, but the X-ray signal is likely too weak to be seen from either balloons or LEO orbiting spacecraft. We further predict the optical signal-to-noise ratio that would be expected in different optical systems. Chemical signatures such as changes to NOx and HOx concentrations are too short-lived to be detectable; however our modeling provides a valuable estimate of the total chemical response. Electron density perturbations should be easily measurable from ground-based high-power radars and via VLF subionospheric remote sensing

Magneto-plasmonic Au-Coated Co nanoparticles synthesized via hot-injection method

Science.gov (United States)

Souza, João B., Jr.; Varanda, Laudemir C.

2018-02-01

A synthetic procedure is described for the obtaining of superparamagnetic Co nanoparticles (NPs) via hot-injection method in the presence of sodium borohydride. The Co NPs obtained have an average diameter of 5.3 nm and saturation magnetization of 115 emu g-1. A modified Langevin equation is fitted to the magnetization curves using a log-normal distribution for the particle diameter and an effective field to account for dipolar interactions. The calculated magnetic diameter of the Co NPs is 0.6 nm smaller than TEM-derived values, implying a magnetic dead layer of 0.3 nm. The magnetic core is coated with Au to prevent oxidation, resulting in water-stable magneto-plasmonic Co/Au core/shell NPs with saturation of 71.6 emu g-1. The coating adds a localized surface plasmon resonance property with absorbance in the so-called ‘therapeutic window’ (690-900 nm), suitable for biomedical applications. It is suggested that these multifunctional NPs are distinguished as a potential platform for applied and fundamental research.

Electron self-injection and acceleration in the bubble regime of laser-plasma interaction

International Nuclear Information System (INIS)

Kostyukov, I.; Nerush, E.

2010-01-01

Complete text of publication follows. The intense laser-plasma and beam-plasma interactions are highly nonlinear-phenomena, which besides being of fundamental interest, attract a great attention due to a number of important applications. One of the key applications is particle acceleration based on excitation of the strong plasma wakefield by laser pulse. In the linear regime of interaction when the laser intensity is low the plasma wake is the linear plasma wave. Moreover, the ponderomotive force of the laser pulse pushes out the plasma electrons from high intensity region leaving behind the laser pulse the plasma cavity - bubble, which is almost free from the plasma electrons. This is the bubble the laser-plasma interaction. Although the bubble propagates with velocity, which is close to speed of light, the huge charge of unshielded ions inside the plasma cavity can trap the cold plasma electrons. Moreover, the electrons are trapped in the accelerated phase of the bubble plasma field thereby leading to efficient electron acceleration. The electron self-injection is an important advantage of the plasma-based acceleration, which allows to exclude the beam loading system requiring accurate synchronization and additional space. The recent experiments have demonstrated high efficiency of the electron self-injection. The beam quality is often of crucial importance in many applications ranging from inertial confinement fusion to the x-ray free electron lasers. Despite a great interest there is still a little theory for relativistic electron dynamics in the plasma wake in multidimensional geometry including electron self-injection. The dynamics of the self-injected electrons can be roughly divided into three stage: (i) electron scattering by the laser pulse, (ii) electron trapping by the bubble, (iii) electron acceleration in the bubble. We developed two analytical models for electron dynamics in the bubble field and verify them by direct measurements of model parameters

Evaluation of Recent Technologies of Nonvolatile RAM

Science.gov (United States)

Nuns, Thierry; Duzellier, Sophie; Bertrand, Jean; Hubert, Guillaume; Pouget, Vincent; Darracq, FrÉdÉric; David, Jean-Pierre; Soonckindt, Sabine

2008-08-01

Two types of recent nonvolatile random access memories (NVRAM) were evaluated for radiation effects: total dose and single event upset and latch-up under heavy ions and protons. Complementary irradiation with a laser beam provides information on sensitive areas of the devices.

Fundamental harmonic electron cyclotron emission for hot, loss-cone type distributions

International Nuclear Information System (INIS)

Bornatici, M.; Ruffina, U.; Westerhof, E.

1988-01-01

Electron cyclotron emission (ECE) is an important diagnostic tool for the study of hot plasmas. ECE can be used not only to measure the electron temperature but also to obtain information about non-thermal characteristics of the electron distribution function. One such a nonthermal characteristic is a loss-cone anisotropy. Loss-cone anisotropy can give rise to unstable growth of electro-magnetic waves around the harmonics of the electron cyclotron resonance and to increased emissivity of electron cyclotron waves. In case of high electron temperatures, also the dispersion properties of the extraordinary (X-) mode arond the fundamental electron cyclotron resonance are changed due to loss-cone anisotropy. The consequences of these dispersion properties for the emissivity of the fundamental harmonic X-mode are analyzed for perpendicular propagation. The emissivity, is calculated for two types of distribution functions having a loss-cone anisotropy. These distribution functions are a relativistic Dory-Guest-Harris type distribution function and modified relativistic Maxwellian distribution having a loss-cone with rounded edges (author). 9 refs.; 2 figs

Ferroelectric memories: A possible answer to the hardened nonvolatile question

International Nuclear Information System (INIS)

Messenger, G.C.; Coppage, F.N.

1988-01-01

Ferroelectric memory cells have been fabricated using a process compatible with semiconductor VLSI (Very Large-Scale Integration) manufacturing techniques which are basically nonvolatile and radiation hard. The memory can be made NDRO (Nondestructive Readout) for strategic systems using several techniques; the most practical is probably a rapid read/restore in combination with EDAC software. This memory can replace plated wire and will have substantial advantages in cost, weight, size, power and speed. It provides a practical cost-competitive solution to the need for nonvolatile RAM in all hardened tactical, avionic, and space systems

Theoretical Study of Ultrafast Electron Injection into a Dye/TiO2 System in Dye-Sensitized Solar Cells

Science.gov (United States)

Lin, Chundan; Xia, Qide; Li, Kuan; Li, Juan; Yang, Zhenqing

2018-06-01

The ultrafast injection of excited electrons in dye/TiO2 system plays a critical role, which determines the device's efficiency in large part. In this work, we studied the geometrical structures and electronic properties of a dye/TiO2 composite system for dye-sensitized solar cells (DSSCs) by using density functional theory, and we analyzed the mechanism of ultrafast electron injection with emphasis on the power conversion efficiency. The results show that the dye SPL103/TiO2 (101) surface is more stable than dye SPL101. The electron injection driving force of SPL103/TiO2 (101) is 3.55 times that of SPL101, indicating that SPL103/TiO2 (101) has a strong ability to transfer electrons. SPL103 and SPL101/TiO2 (101) both have fast electron transfer processes, and especially the electron injection time of SPL103/TiO2 (101) is only 1.875 fs. The results of this work are expected to provide a new understanding of the mechanism of electron injection in dyes/TiO2 systems for use in highly effective DSSCs.

Role of Non-Volatile Memories in Automotive and IoT Markets

Science.gov (United States)

2017-03-01

Standard Manufacturing Supply Long Term Short to Medium Term Density Up to 16MB Up to 2MB IO Configuration Up to x128 Up to x32 Design for Test...Role of Non-Volatile Memories in Automotive and IoT Markets Vipin Tiwari Director, Business Development and Product Marketing SST – A Wholly Own...microcontrollers (MCU) and certainly one of the most challenging elements to master. This paper addresses the role of non-volatile memories for

Time-resolved measurements of the hot-electron population in ignition-scale experiments on the National Ignition Facility (invited)

Energy Technology Data Exchange (ETDEWEB)

Hohenberger, M., E-mail: mhoh@lle.rochester.edu; Stoeckl, C. [Laboratory for Laser Energetics, University of Rochester, Rochester, New York 14623 (United States); Albert, F.; Palmer, N. E.; Döppner, T.; Divol, L.; Dewald, E. L.; Bachmann, B.; MacPhee, A. G.; LaCaille, G.; Bradley, D. K. [Lawrence Livermore National Laboratory, Livermore, California 94550 (United States); Lee, J. J. [National Security Technologies LLC, Livermore, California 94551 (United States)

2014-11-15

In laser-driven inertial confinement fusion, hot electrons can preheat the fuel and prevent fusion-pellet compression to ignition conditions. Measuring the hot-electron population is key to designing an optimized ignition platform. The hot electrons in these high-intensity, laser-driven experiments, created via laser-plasma interactions, can be inferred from the bremsstrahlung generated by hot electrons interacting with the target. At the National Ignition Facility (NIF) [G. H. Miller, E. I. Moses, and C. R. Wuest, Opt. Eng. 43, 2841 (2004)], the filter-fluorescer x-ray (FFLEX) diagnostic–a multichannel, hard x-ray spectrometer operating in the 20–500 keV range–has been upgraded to provide fully time-resolved, absolute measurements of the bremsstrahlung spectrum with ∼300 ps resolution. Initial time-resolved data exhibited significant background and low signal-to-noise ratio, leading to a redesign of the FFLEX housing and enhanced shielding around the detector. The FFLEX x-ray sensitivity was characterized with an absolutely calibrated, energy-dispersive high-purity germanium detector using the high-energy x-ray source at NSTec Livermore Operations over a range of K-shell fluorescence energies up to 111 keV (U K{sub β}). The detectors impulse response function was measured in situ on NIF short-pulse (∼90 ps) experiments, and in off-line tests.

Target Surface Area Effects on Hot Electron Dynamics from High Intensity Laser-Plasma Interactions

Science.gov (United States)

2016-08-19

Science, University ofMichigan, AnnArbor,MI 48109-2099, USA E-mail: czulick@umich.edu Keywords: laser- plasma ,mass-limited, fast electrons , sheath...New J. Phys. 18 (2016) 063020 doi:10.1088/1367-2630/18/6/063020 PAPER Target surface area effects on hot electron dynamics from high intensity laser... plasma interactions CZulick, ARaymond,AMcKelvey, VChvykov, AMaksimchuk, AGRThomas, LWillingale, VYanovsky andKKrushelnick Center forUltrafast Optical

Hot electron and real space transfer in double-quantum-well structures

International Nuclear Information System (INIS)

Okuno, Eiichi; Sawaki, Nobuhiko; Akasaki, Isamu; Kano, Hiroyuki; Hashimoto, Masafumi.

1991-01-01

The hot electron phenomena and real space transfer (RST) effect are studied in GaAs/AlGaAs double-quantum-well (DQW) structures, in which we have two kind of quantum wells with different widths. The drift velocity and the electron temperature at liquid helium temperature are investigated as a function of the external electric field applied parallel to the heterointerface. By increasing the field, the electron temperature rises and reaches a plateau in the intermediate region, followed by further rise in the high-field region. The appearance of the plateau is attributed to the RST effect between the two quantum wells. The threshold field for the appearance of the plateau is determined by the difference energy between the quantized levels in two wells. The energy loss rate as a function of the electron temperature indicates that the RST is assisted by LO phonon scattering. (author)

Nonvolatile two-step, two-color holography with continuous-wave lights for both congruent and near-stoichiometric LiNbO3:Fe

International Nuclear Information System (INIS)

Shen Yan; Zhang Guoquan; Fu Bo; Xu Qingjun; Xu Jingjun

2004-01-01

We have studied theoretically the steady-state nonvolatile two-step, two-color holographic recording performance for both the congruent and the near-stoichiometric LiNbO 3 :Fe based on the two-center model (the deep-trap and the shallow-trap centers are Fe 2+ /Fe 3+ and Nb Li 4+ /Nb Li 5+ , respectively). The results show that the direct electron exchange between the Fe 2+ /Fe 3+ centers and the Nb Li 4+ /Nb Li 5+ centers due to the tunneling effect dominates the charge-transfer process during the nonvolatile two-step, two-color holography and determines the two-step, two-color holography performance in LiNbO 3 :Fe. We have further studied the effects of the crystal stoichiometry on the performance of the two-step, two-color holography. It is shown that, as far as the total space-charge field is considered, the nonvolatile two-step, two-color holography performance in the near-stoichiometric LiNbO 3 :Fe is much better than that in the congruent LiNbO 3 :Fe within the intensity range reachable by the continuous-wave lights

Broadband Cooling Spectra of Hot Electrons and Holes in PbSe Quantum Dots

NARCIS (Netherlands)

Spoor, F.C.M.; Tomić, Stanko; Houtepen, A.J.; Siebbeles, L.D.A.

2017-01-01

Understanding cooling of hot charge carriers in semiconductor quantum dots (QDs) is of fundamental interest and useful to enhance the performance of QDs in photovoltaics. We study electron and hole cooling dynamics in PbSe QDs up to high energies where carrier multiplication occurs. We

Nonvolatile flexible organic bistable devices fabricated utilizing CdSe/ZnS nanoparticles embedded in a conducting poly N-vinylcarbazole polymer layer

International Nuclear Information System (INIS)

Son, Dong-Ick; Kim, Ji-Hwan; Park, Dong-Hee; Choi, Won Kook; Li, Fushan; Ham, Jung Hun; Kim, Tae Whan

2008-01-01

The bistable effects of CdSe/ZnS nanoparticles embedded in a conducting poly N-vinylcarbazole (PVK) polymer layer by using flexible poly-vinylidene difluoride (PVDF) and polyethylene terephthalate (PET) substrates were investigated. Transmission electron microscopy (TEM) images revealed that CdSe/ZnS nanoparticles were formed inside the PVK polymer layer. Current-voltage (I-V) measurement on the Al/[CdSe/ZnS nanoparticles+ PVK]/ITO/PVDF and Al/[CdSe/ZnS nanoparticles+ PVK ]/ITO/PET structures at 300 K showed a nonvolatile electrical bistability behavior with a flat-band voltage shift due to the existence of the CdSe/ZnS nanoparticles, indicative of trapping, storing and emission of charges in the electronic states of the CdSe nanoparticles. A bistable behavior for the fabricated organic bistable device (OBD) structures is described on the basis of the I-V results. These results indicate that OBDs fabricated by embedding inorganic CdSe/ZnS nanoparticles in a conducting polymer matrix on flexible substrates are prospects for potential applications in flexible nonvolatile flash memory devices

MODELING OF ELECTRONIC GASOLINE INJECTION PROCESSES IN TWO STROKE ENGINE

Directory of Open Access Journals (Sweden)

Hraivoronskyi, Y.

2013-06-01

Full Text Available Basic provision of the processes developed mode, occurring in ignition fuel system with electronically controlled two stroke engine with positive ignition are given. Fuel injection process’ calculation results for the case of placing fuel injector into intake system presented.

Coexistence of nonvolatility and volatility in Pt/Nb-doped SrTiO3/In memristive devices

International Nuclear Information System (INIS)

Yang, M; Bao, D H; Li, S W

2013-01-01

Memristive devices are triggering innovations in the fields of nonvolatile memory, digital logic, analogue circuits, neuromorphic engineering, and so on. Creating new memristive devices with unique characteristics would be significant for these emergent applications. Here we report the coexistence of nonvolatility and volatility in Pt/Nb-doped SrTiO 3 (NSTO)/In memristive devices. The Pt/NSTO interface contributes a nonvolatile resistive switching behaviour, whereas the NSTO/In interface displays a volatile hysteresis loop. Combining the two interfaces in the Pt/NSTO/In devices leads to the unique coexistence of nonvolatility and volatility. The results imply more opportunities to invent new memristive devices by engineering both interfaces in metal/insulator/metal structures. (paper)

Electron - polar acoustical phonon interactions in nitride based diluted magnetic semiconductor quantum well via hot electron magnetotransport

International Nuclear Information System (INIS)

Pandya, Ankur; Shinde, Satyam; Jha, Prafulla K.

2015-01-01

In this paper the hot electron transport properties like carrier energy and momentum scattering rates and electron energy loss rates are calculated via interactions of electrons with polar acoustical phonons for Mn doped BN quantum well in BN nanosheets via piezoelectric scattering and deformation potential mechanisms at low temperatures with high electric field. Electron energy loss rate increases with the electric field. It is observed that at low temperatures and for low electric field the phonon absorption is taking place whereas, for sufficient large electric field, phonon emission takes place. Under the piezoelectric (polar acoustical phonon) scattering mechanism, the carrier scattering rate decreases with the reduction of electric field at low temperatures wherein, the scattering rate variation with electric field is limited by a specific temperature beyond which there is no any impact of electric field on such scattering

Scanning electron microscopy and transmission electron microscopy study of hot-deformed gamma-TiAl-based alloy microstructure.

Science.gov (United States)

Chrapoński, J; Rodak, K

2006-09-01

The aim of this work was to assess the changes in the microstructure of hot-deformed specimens made of alloys containing 46-50 at.% Al, 2 at.% Cr and 2 at.% Nb (and alloying additions such as carbon and boron) with the aid of scanning electron microscopy and transmission electron microscopy techniques. After homogenization and heat treatment performed in order to make diverse lamellae thickness, the specimens were compressed at 1000 degrees C. Transmission electron microscopy examinations of specimens after the compression test revealed the presence of heavily deformed areas with a high density of dislocation. Deformation twins were also observed. Dynamically recrystallized grains were revealed. For alloys no. 2 and no. 3, the recovery and recrystallization processes were more extensive than for alloy no. 1.

Reversible and nonvolatile ferroelectric control of two-dimensional electronic transport properties of ZrCuSiAs-type copper oxyselenide thin films with a layered structure

Science.gov (United States)

Zhao, Xu-Wen; Gao, Guan-Yin; Yan, Jian-Min; Chen, Lei; Xu, Meng; Zhao, Wei-Yao; Xu, Zhi-Xue; Guo, Lei; Liu, Yu-Kuai; Li, Xiao-Guang; Wang, Yu; Zheng, Ren-Kui

2018-05-01

Copper-based ZrCuSiAs-type compounds of LnCuChO (Ln =Bi and lanthanides, Ch =S , Se, Te) with a layered crystal structure continuously attract worldwide attention in recent years. Although their high-temperature (T ≥ 300 K) electrical properties have been intensively studied, their low-temperature electronic transport properties are little known. In this paper, we report the integration of ZrCuSiAs-type copper oxyselenide thin films of B i0.94P b0.06CuSeO (BPCSO) with perovskite-type ferroelectric Pb (M g1 /3N b2 /3 ) O3-PbTi O3 (PMN-PT) single crystals in the form of ferroelectric field effect devices that allow us to control the electronic properties (e.g., carrier density, magnetoconductance, dephasing length, etc.) of BPCSO films in a reversible and nonvolatile manner by polarization switching at room temperature. Combining ferroelectric gating and magnetotransport measurements with the Hikami-Larkin-Nagaoka theory, we demonstrate two-dimensional (2D) electronic transport characteristics and weak antilocalization effect as well as strong carrier-density-mediated competition between weak antilocalization and weak localization in BPCSO films. Our results show that ferroelectric gating using PMN-PT provides an effective and convenient approach to probe the carrier-density-related 2D electronic transport properties of ZrCuSiAs-type copper oxyselenide thin films.

Hot accretion disks with electron-positron pairs

International Nuclear Information System (INIS)

White, T.R.; Lightman, A.P.

1989-01-01

The hot thermal accretion disks of the 1970s are studied and consideration is given to the effects of electron-positron pairs, which were originally neglected. It is found that disks cooled by internally produced photons have a critical accretion rate above which equilibrium is not possible in a radial annulus centered around r = 10 GM/c-squared, where M is the mass of the central object. This confirms and extends previous work by Kusunose and Takahara. Above the critical rate, pairs are created more rapidly than they can be destroyed. Below the critical rate, there are two solutions to the disk structure, one with a high pair density and one with a low pair density. Depending on the strength of the viscosity, the critical accretion rate corresponds to a critical luminosity of about 3-10 percent of the Eddington limit. 32 refs

Study of nonlinear electron-acoustic solitary and shock waves in a dissipative, nonplanar space plasma with superthermal hot electrons

Energy Technology Data Exchange (ETDEWEB)

Han, Jiu-Ning, E-mail: hanjiuning@126.com; He, Yong-Lin; Luo, Jun-Hua; Nan, Ya-Gong; Han, Zhen-Hai; Dong, Guang-Xing [College of Physics and Electromechanical Engineering, Hexi University, Zhangye 734000 (China); Duan, Wen-Shan [College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070 (China); Li, Jun-Xiu [College of Civil Engineering, Hexi University, Zhangye 734000 (China)

2014-01-15

With the consideration of the superthermal electron distribution, we present a theoretical investigation about the nonlinear propagation of electron-acoustic solitary and shock waves in a dissipative, nonplanar non-Maxwellian plasma comprised of cold electrons, superthermal hot electrons, and stationary ions. The reductive perturbation technique is used to obtain a modified Korteweg-de Vries Burgers equation for nonlinear waves in this plasma. We discuss the effects of various plasma parameters on the time evolution of nonplanar solitary waves, the profile of shock waves, and the nonlinear structure induced by the collision between planar solitary waves. It is found that these parameters have significant effects on the properties of nonlinear waves and collision-induced nonlinear structure.

Non-equilibrium between ions and electrons inside hot spots from National Ignition Facility experiments

OpenAIRE

Zhengfeng Fan; Yuanyuan Liu; Bin Liu; Chengxin Yu; Ke Lan; Jie Liu

2017-01-01

The non-equilibrium between ions and electrons in the hot spot can relax the ignition conditions in inertial confinement fusion [Fan et al., Phys. Plasmas 23, 010703 (2016)], and obvious ion-electron non-equilibrium could be observed by our simulations of high-foot implosions when the ion-electron relaxation is enlarged by a factor of 2. On the other hand, in many shots of high-foot implosions on the National Ignition Facility, the observed X-ray enhancement factors due to ablator mixing into...

A method for manufacturing a tool part for an injection molding process, a hot embossing process, a nano-imprint process, or an extrusion process

DEFF Research Database (Denmark)

2013-01-01

The present invention relates to a method for manufacturing a tool part for an injection molding process, a hot embossing process, nano-imprint process or an extrusion process. First, there is provided a master structure (10) with a surface area comprising nanometre-sized protrusions (11...

Effects of zinc injection from hot functional test at Tomari Unit 3

International Nuclear Information System (INIS)

Hayakawa, Hitoshi; Mino, Yoshitaka; Nakahama, Satoshi; Aizawa, Yamato; Shimizu, Yuichi; Umehara, Ryuji; Kogawa, Noritaka

2012-09-01

At Tomari Nuclear Power Station unit 3 (hereafter Tomari unit 3, PWR, commercial operation from December 2009), the zinc injection for dose-rate reduction was started as early as at the Hot Functional Test (hereafter HFT) stage, for the first time in the world. The results of the Steam Generator (hereafter SG) insert plate analysis and the ambient dose-rate measurement till the end of the test operation reported heretofore, show the formation of the robust oxide film on the primary material surfaces and the associated corrosion suppression effect, and a considerable dose-rate reduction of about 40 to 60% lower than a reference plant. (*: Asian Water Chemistry Symposium in Nagoya on 2009 and NPC2010 in Canada). The material of SG tube is Alloy 690TT in Tomari unit 3. Generally, the dose-rates of the plants with Alloy 690TT SG are the highest at the 1. or 2. refueling outage (hereafter RFO), due to the effects of the Ni dissolution from the initial corrosion of Alloy 690TT. Therefore, the dose-rate of Tomari unit 3 at the 1. RFO is compared with those of the other Japanese PWR plants at their 1. RFO. As the result, the dose-rates inside the main components such as SG, Main Coolant Pipe (hereafter MCP) and Reactor Vessel (hereafter RV) are about 50% lower at the 1. RFO of Tomari unit 3 than those of a reference plant (a 3-Loop PWR plant in Japan). Therefore, an additional dose-rate reduction effects is expected by the Ni release rate reduction from Alloy 690TT and the effect of zinc injection. In this report, the actual dose-rates at the primary main components, the trends of the water chemistry and dose rates reduction effect with the zinc injection at the 1. RFO (offline in January 2011) of Tomari unit 3 are introduced. Also, a part of the experiences at the 2. RFO (offline in May 2012) is introduced. (authors)

Exercise in Experimental Plastics Technology: Hot Embossing of Polymers with surface microstructure

DEFF Research Database (Denmark)

Eriksson, Torbjörn Gerhard; Rasmussen, Henrik Koblitz

2004-01-01

Hot Embossing of polymers with surface microstructure Polymer materials have proven to be good materials for manufacturing nano/ and microstructure. There are three major processing techniques: hot embossing, injection moulding and casting. Hot embossing provides several advantages such as relati......Hot Embossing of polymers with surface microstructure Polymer materials have proven to be good materials for manufacturing nano/ and microstructure. There are three major processing techniques: hot embossing, injection moulding and casting. Hot embossing provides several advantages...... such as relatively low cost for embossing tools, simple operation and high replication accuracy for small features. Two different plastic materials will be used to replicate surface microstructures by hot embossing. The hot embossing will be done in a hydraulic press where it is easy to control temperature...

High-performance non-volatile organic ferroelectric memory on banknotes

KAUST Repository

Khan, Yasser; Bhansali, Unnat Sampatraj; Alshareef, Husam N.

2012-01-01

High-performance non-volatile polymer ferroelectric memory are fabricated on banknotes using poly(vinylidene fluoride trifluoroethylene). The devices show excellent performance with high remnant polarization, low operating voltages, low leakage

Energy relaxation and separation of a hot electron-hole pair in organic aggregates from a time-dependent wavepacket diffusion method

International Nuclear Information System (INIS)

Han, Lu; Liang, WanZhen; Zhao, Yi; Zhong, Xinxin

2014-01-01

The time-dependent wavepacket diffusive method [X. Zhong and Y. Zhao, J. Chem. Phys. 138, 014111 (2013)] is extended to investigate the energy relaxation and separation of a hot electron-hole pair in organic aggregates with incorporation of Coulomb interaction and electron-phonon coupling. The pair initial condition generated by laser pulse is represented by a Gaussian wavepacket with a central momentum. The results reveal that the hot electron energy relaxation is very well described by two rate processes with the fast rate much larger than the slow one, consistent with experimental observations, and an efficient electron-hole separation is accomplished accompanying the fast energy relaxation. Furthermore, although the extra energy indeed helps the separation by overcoming the Coulomb interaction, the width of initial wavepacket is much sensitive to the separation efficiency and the narrower wavepacket generates the more separated charges. This behavior may be useful to understand the experimental controversy of the hot carrier effect on charge separation

Physical implication of transition voltage in organic nano-floating-gate nonvolatile memories

Energy Technology Data Exchange (ETDEWEB)

Wang, Shun; Gao, Xu, E-mail: wangsd@suda.edu.cn, E-mail: gaoxu@suda.edu.cn; Zhong, Ya-Nan; Zhang, Zhong-Da; Xu, Jian-Long; Wang, Sui-Dong, E-mail: wangsd@suda.edu.cn, E-mail: gaoxu@suda.edu.cn [Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu 215123 (China)

2016-07-11

High-performance pentacene-based organic field-effect transistor nonvolatile memories, using polystyrene as a tunneling dielectric and Au nanoparticles as a nano-floating-gate, show parallelogram-like transfer characteristics with a featured transition point. The transition voltage at the transition point corresponds to a threshold electric field in the tunneling dielectric, over which stored electrons in the nano-floating-gate will start to leak out. The transition voltage can be modulated depending on the bias configuration and device structure. For p-type active layers, optimized transition voltage should be on the negative side of but close to the reading voltage, which can simultaneously achieve a high ON/OFF ratio and good memory retention.

Discrete Charge Storage Nonvolatile Memory Based on Si Nanocrystals with Nitridation Treatment

International Nuclear Information System (INIS)

Xian-Gao, Zhang; Kun-Ji, Chen; Zhong-Hui, Fang; Xin-Ye, Qian; Guang-Yuan, Liu; Xiao-Fan, Jiang; Zhong-Yuan, Ma; Jun, Xu; Xin-Fan, Huang; Jian-Xin, Ji; Fei, He; Kuang-Bao, Song; Jun, Zhang; Hui, Wan; Rong-Hua, Wang

2010-01-01

A nonvolatile memory device with nitrided Si nanocrystals embedded in a Boating gate was fabricated. The uniform Si nanocrystals with high density (3 × 10 11 cm −2 ) were deposited on ultra-thin tunnel oxide layer (∼ 3 nm) and followed by a nitridation treatment in ammonia to form a thin silicon nitride layer on the surface of nanocrystals. A memory window of 2.4 V was obtained and it would be larger than 1.3 V after ten years from the extrapolated retention data. The results can be explained by the nitrogen passivation of the surface traps of Si nanocrystals, which slows the charge loss rate. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Hot electron transport modelling in fast ignition relevant targets with non-Spitzer resistivity

Energy Technology Data Exchange (ETDEWEB)

Chapman, D A; Hoarty, D J; Swatton, D J R [Plasma Physics Department, AWE, Aldermaston, Reading, Berkshire, RG7 4PR (United Kingdom); Hughes, S J, E-mail: david.chapman@awe.co.u [Computational Physics Group, AWE, Aldermaston, Reading, Berkshire, RG7 4PR (United Kingdom)

2010-08-01

The simple Lee-More model for electrical resistivity is implemented in the hybrid fast electron transport code THOR. The model is shown to reproduce experimental data across a wide range of temperatures using a small number of parameters. The effect of this model on the heating of simple Al targets by a short-pulse laser is studied and compared to the predictions of the classical Spitzer-Haerm resistivity. The model is then used in simulations of hot electron transport experiments using buried layer targets.

Tailoring of polarization in electron blocking layer for electron confinement and hole injection in ultraviolet light-emitting diodes

International Nuclear Information System (INIS)

Lu, Yu-Hsuan; Pilkuhn, Manfred H.; Fu, Yi-Keng; Chu, Mu-Tao; Huang, Shyh-Jer; Su, Yan-Kuin; Wang, Kang L.

2014-01-01

The influence of the AlGaN electron blocking layer (EBL) with graded aluminum composition on electron confinement and hole injection in AlGaN-based ultraviolet light-emitting diodes (LEDs) are investigated. The light output power of LED with graded AlGaN EBL was markedly improved, comparing to LED with conventional EBL. In experimental results, a high increment of 86.7% can be obtained in light output power. Simulation analysis shows that via proper modification of the barrier profile from the last barrier of the active region to EBL, not only the elimination of electron overflow to p-type layer can be achieved but also the hole injection into the active region can be enhanced, compared to a conventional LED structure. The dominant factor to the performance improvement is shown to be the modulation of polarization field by the graded Al composition in EBL

Tailoring of polarization in electron blocking layer for electron confinement and hole injection in ultraviolet light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Lu, Yu-Hsuan; Pilkuhn, Manfred H. [Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Fu, Yi-Keng; Chu, Mu-Tao [Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu 31040, Taiwan (China); Huang, Shyh-Jer, E-mail: yksu@mail.ncku.edu.tw, E-mail: totaljer48@gmail.com [Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, California 90095 (United States); Su, Yan-Kuin, E-mail: yksu@mail.ncku.edu.tw, E-mail: totaljer48@gmail.com [Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Department of Electronic Engineering, Kun-Shan University, Tainan 71003, Taiwan (China); Wang, Kang L. [Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, California 90095 (United States)

2014-03-21

The influence of the AlGaN electron blocking layer (EBL) with graded aluminum composition on electron confinement and hole injection in AlGaN-based ultraviolet light-emitting diodes (LEDs) are investigated. The light output power of LED with graded AlGaN EBL was markedly improved, comparing to LED with conventional EBL. In experimental results, a high increment of 86.7% can be obtained in light output power. Simulation analysis shows that via proper modification of the barrier profile from the last barrier of the active region to EBL, not only the elimination of electron overflow to p-type layer can be achieved but also the hole injection into the active region can be enhanced, compared to a conventional LED structure. The dominant factor to the performance improvement is shown to be the modulation of polarization field by the graded Al composition in EBL.

Numerical study of the generation of runaway electrons in a gas diode with a hot channel

Energy Technology Data Exchange (ETDEWEB)

Lisenkov, V. V., E-mail: lisenkov@iep.uran.ru [Institute of Electrophysics UrB RAS, 106 Amundsena St., Ekaterinburg 620012 (Russian Federation); Ural Federal University, 19 Mira St., Ekaterinburg 620002 (Russian Federation); Shklyaev, V. A., E-mail: shklyaev@to.hcei.tsc.ru [Institute of High Current Electronics SD RAS, 2/3 Akademichesky Avenue, 634055 Tomsk (Russian Federation); National Research Tomsk Polytechnic University, 30 Lenin Avenue, 634050 Tomsk (Russian Federation)

2015-11-15

A new method for increasing the efficiency of runaway electron beam generation in atmospheric pressure gas media has been suggested and theoretically proved. The method consists of creating a hot region (e.g., a spark channel or a laser plume) with a decreased numerical density of gas molecules (N) near the cathode. In this method, the ratio E/N (E—electric field strength) is increased by decreasing N instead of increasing E, as has been done in the past. The numerical model that is used allows the simultaneous calculation of the formation of a subnanosecond gas discharge and the generation of runaway electrons in gas media. The calculations have demonstrated the possibility of obtaining current pulses of runaway electrons with amplitudes of hundred of amperes and durations of more than 100 ps. The influence of the hot channel geometry on the parameters of the generated beam has been investigated.

Hot-electron-plasma accumulation in the CIRCE mirror experiment

International Nuclear Information System (INIS)

Bardet, R.; Briand, P.; Dupas, L.; Gormezano, C.; Melin, G.

1975-01-01

In the CIRCE experiment, the plasma is obtained by the trapping of a plasma injected into a magnetic bottle by electron heating at cyclotron resonance. The plasma density lies between 5x10 11 cm -3 and 10 12 cm -3 , the electron temperature is about 100 keV and the ion temperature is in the range of few hundred electronvolts. Gross instabilities are not observed. The ratio of the plasma density to the neutral-gas density inside the plasma is higher than 100. A few kilowatts of r.f. power at 8 GHz are sufficient to obtain these results, a fact which looks encouraging as far as the creation of a more effective fast-neutral-target plasma using the CIRCE-experiment concept is concerned. (author)

Transparent Memory For Harsh Electronics

KAUST Repository

Ho, C. H.; Duran Retamal, Jose Ramon; Yang, P. K.; Lee, C. P.; Tsai, M. L.; Kang, C. F.; He, Jr-Hau

2017-01-01

As a new class of non-volatile memory, resistive random access memory (RRAM) offers not only superior electronic characteristics, but also advanced functionalities, such as transparency and radiation hardness. However, the environmental tolerance

Nonvolatile Solid-State Charged-Polymer Gating of Topological Insulators into the Topological Insulating Regime

Science.gov (United States)

Ireland, R. M.; Wu, Liang; Salehi, M.; Oh, S.; Armitage, N. P.; Katz, H. E.

2018-04-01

We demonstrate the ability to reduce the carrier concentration of thin films of the topological insulator (TI) Bi2 Se3 by utilizing a nonvolatile electrostatic gating via corona charging of electret polymers. Sufficient electric field can be imparted to a polymer-TI bilayer to result in significant electron density depletion, even without the continuous connection of a gate electrode or the chemical modification of the TI. We show that the Fermi level of Bi2 Se3 is shifted toward the Dirac point with this method. Using terahertz spectroscopy, we find that the surface chemical potential is lowered into the bulk band gap (approximately 50 meV above the Dirac point and 170 meV below the conduction-band minimum), and it is stabilized in the intrinsic regime while enhancing electron mobility. The mobility of surface state electrons is enhanced to a value as high as approximately 1600 cm2/V s at 5 K.

Active non-volatile memory post-processing

Energy Technology Data Exchange (ETDEWEB)

Kannan, Sudarsun; Milojicic, Dejan S.; Talwar, Vanish

2017-04-11

A computing node includes an active Non-Volatile Random Access Memory (NVRAM) component which includes memory and a sub-processor component. The memory is to store data chunks received from a processor core, the data chunks comprising metadata indicating a type of post-processing to be performed on data within the data chunks. The sub-processor component is to perform post-processing of said data chunks based on said metadata.

Multifunctional BiFeO{sub 3}/TiO{sub 2} nano-heterostructure: Photo-ferroelectricity, rectifying transport, and nonvolatile resistive switching property

Energy Technology Data Exchange (ETDEWEB)

Sarkar, Ayan; Khan, Gobinda Gopal, E-mail: gobinda.gk@gmail.com [Centre for Research in Nanoscience and Nanotechnology, University of Calcutta, Technology Campus, Block JD2, Sector III, Salt Lake City, Kolkata 700 098 (India); Chaudhuri, Arka [Department of Condensed Matter Physics and Material Sciences, S. N. Bose National Centre for Basic Sciences, Block JD, Sector III, Salt Lake City, Kolkata 700 098 (India); Department of Applied Science, Haldia Institute of Technology, Haldia 721657, Purba Medinipur, West Bengal (India); Das, Avishek [Department of Electronic Science, University of Calcutta, 92 APC Road, Kolkata 700009 (India); Mandal, Kalyan [Department of Condensed Matter Physics and Material Sciences, S. N. Bose National Centre for Basic Sciences, Block JD, Sector III, Salt Lake City, Kolkata 700 098 (India)

2016-01-18

Multifunctional BiFeO{sub 3} nanostructure anchored TiO{sub 2} nanotubes are fabricated by coupling wet chemical and electrochemical routes. BiFeO{sub 3}/TiO{sub 2} nano-heterostructure exhibits white-light-induced ferroelectricity at room temperature. Studies reveal that the photogenerated electrons trapped at the domain/grain boundaries tune the ferroelectric polarization in BiFeO{sub 3} nanostructures. The photon controlled saturation and remnant polarization opens up the possibility to design ferroelectric devices based on BiFeO{sub 3.} The nano-heterostructure also exhibits substantial photovoltaic effect and rectifying characteristics. Photovoltaic property is found to be correlated with the ferroelectric polarization. Furthermore, the nonvolatile resistive switching in BiFeO{sub 3}/TiO{sub 2} nano-heterostructure has been studied, which demonstrates that the observed resistive switching is most likely caused by the electric-field-induced carrier injection/migration and trapping/detrapping process at the hetero-interfaces. Therefore, BiFeO{sub 3}/TiO{sub 2} nano-heterostructure coupled with logic, photovoltaics and memory characteristics holds promises for long-term technological applications in nanoelectronics devices.

Nonvolatile memory effect of tungsten nanocrystals under oxygen plasma treatments

International Nuclear Information System (INIS)

Chen, Shih-Cheng; Chang, Ting-Chang; Chen, Wei-Ren; Lo, Yuan-Chun; Wu, Kai-Ting; Sze, S.M.; Chen, Jason; Liao, I.H.; Yeh, Fon-Shan

2010-01-01

In this work, an oxygen plasma treatment was used to improve the memory effect of nonvolatile W nanocrystal memory, including memory window, retention and endurance. To investigate the role of the oxygen plasma treatment in charge storage characteristics, the X-ray photon-emission spectra (XPS) were performed to analyze the variation of chemical composition for W nanocrystal embedded oxide both with and without the oxygen plasma treatment. In addition, the transmission electron microscopy (TEM) analyses were also used to identify the microstructure in the thin film and the size and density of W nanocrystals. The device with the oxygen plasma treatment shows a significant improvement of charge storage effect, because the oxygen plasma treatment enhanced the quality of silicon oxide surrounding the W nanocrystals. Therefore, the data retention and endurance characteristics were also improved by the passivation.

Floating-Gate Manipulated Graphene-Black Phosphorus Heterojunction for Nonvolatile Ambipolar Schottky Junction Memories, Memory Inverter Circuits, and Logic Rectifiers.

Science.gov (United States)

Li, Dong; Chen, Mingyuan; Zong, Qijun; Zhang, Zengxing

2017-10-11

The Schottky junction is an important unit in electronics and optoelectronics. However, its properties greatly degrade with device miniaturization. The fast development of circuits has fueled a rapid growth in the study of two-dimensional (2D) crystals, which may lead to breakthroughs in the semiconductor industry. Here we report a floating-gate manipulated nonvolatile ambipolar Schottky junction memory from stacked all-2D layers of graphene-BP/h-BN/graphene (BP, black phosphorus; h-BN, hexagonal boron nitride) in a designed floating-gate field-effect Schottky barrier transistor configuration. By manipulating the voltage pulse applied to the control gate, the device exhibits ambipolar characteristics and can be tuned to act as graphene-p-BP or graphene-n-BP junctions with reverse rectification behavior. Moreover, the junction exhibits good storability properties of more than 10 years and is also programmable. On the basis of these characteristics, we further demonstrate the application of the device to dual-mode nonvolatile Schottky junction memories, memory inverter circuits, and logic rectifiers.

Numerical simulation of the processes of small-diameter high-current electron beam shaping and injection

CERN Document Server

Gordeev, V S; Myskov, G A

2001-01-01

With the aid of BEAM 25 program there was carried out the numerical simulation of the non-stationary process of shaping a small-diameter (<= 20mm) high-current hollow electron beam in a diode with magnetic insulation,as well as of the process of beam injection into the accelerating LIA track. The diode configuration for the purpose of eliminating the leakage of electron flux to the anode surface was update. Presented are the results of calculation of the injected beam characteristics (amplitude-time parameters of a current pulse, space-angle distributions of electrons etc.) depending on diode geometric parameters.

Enhanced non-volatile and updatable holography using a polymer composite system.

Science.gov (United States)

Wu, Pengfei; Sun, Sam Q; Baig, Sarfaraz; Wang, Michael R

2012-03-12

Updatable holography is considered as the ultimate technique for true 3D information recording and display. However, there is no practical solution to preserve the required features of both non-volatility and reversibility which conflict with each other when the reading has the same wavelength as the recording. We demonstrate a non-volatile and updatable holographic approach by exploiting new features of molecular transformations in a polymer recording system. In addition, by using a new composite recording film containing photo-reconfigurable liquid-crystal (LC) polymer, the holographic recording is enhanced due to the collective reorientation of LC molecules around the reconfigured polymer chains.

Radiation-hardened nonvolatile MNOS RAM

International Nuclear Information System (INIS)

Wrobel, T.F.; Dodson, W.H.; Hash, G.L.; Jones, R.V.; Nasby, R.D.; Olson, R.J.

1983-01-01

A radiation hardened nonvolatile MNOS RAM is being developed at Sandia National Laboratories. The memory organization is 128 x 8 bits and utilizes two p-channel MNOS transistors per memory cell. The peripheral circuitry is constructed with CMOS metal gate and is processed with standard Sandia rad-hard processing techniques. The devices have memory retention after a dose-rate exposure of 1E12 rad(Si)/s, are functional after total dose exposure of 1E6 rad(Si), and are dose-rate upset resistant to levels of 7E8 rad(Si)/s

Effect of excess superthermal hot electrons on finite amplitude ion-acoustic solitons and supersolitons in a magnetized auroral plasma

Energy Technology Data Exchange (ETDEWEB)

Rufai, O. R., E-mail: rrufai@csir.co.za [Council for Scientific and Industrial Research, Pretoria (South Africa); Bharuthram, R., E-mail: rbharuthram@uwc.ac.za [University of the Western Cape, Bellville (South Africa); Singh, S. V., E-mail: satyavir@iigs.iigm.res.in; Lakhina, G. S., E-mail: lakhina@iigs.iigm.res.in [Indian Institute of Geomagnetism, New Panvel (W), Navi, Mumbai-410218 (India)

2015-10-15

The effect of excess superthermal electrons is investigated on finite amplitude nonlinear ion-acoustic waves in a magnetized auroral plasma. The plasma model consists of a cold ion fluid, Boltzmann distribution of cool electrons, and kappa distributed hot electron species. The model predicts the evolution of negative potential solitons and supersolitons at subsonic Mach numbers region, whereas, in the case of Cairn's nonthermal distribution model for the hot electron species studied earlier, they can exist both in the subsonic and supersonic Mach number regimes. For the dayside auroral parameters, the model generates the super-acoustic electric field amplitude, speed, width, and pulse duration of about 18 mV/m, 25.4 km/s, 663 m, and 26 ms, respectively, which is in the range of the Viking spacecraft measurements.

Hot spots on Tc-99m MAA perfusion lung scan

International Nuclear Information System (INIS)

Lim, Seok Tae; Sohn, Myung Hee

2001-01-01

A 61 year-old woman underwent perfusion and inhalation lung scan for the evaluation of pulmonary thromboembolism. Tc-99m MAA perfusion lung scan showed multiple round hot spots in both lung fields. Tc-99m DTPA aerosol inhalation lung scan and chest radiography taken at the same time showed normal findings. A repeated perfusion lung scan taken 24 hours later demonstrated no abnormalities. Hot spots on perfusion lung scan can be caused by microsphere clumping due to faulty injection technique by radioactive embolization from upper extremity thrombophlebitis after injection. Focal hot spots can signify zones of atelectasis, where the hot spots probably represent a failure of hypoxic vasoconstriction. Artifactual hot spots due to microsphere clumping usually appear to be round and in peripheral location, and the lesions due to a loss of hypoxic vasoconstriction usually appear to be hot uptakes having linear borders. Although these artifactual hot spots have been well-known, we rarely encounter them. This report presents a case with artifactual hot spots due to microsphere clumping on Tc-99m MAA perfusion lung scan

Electron acceleration by CO/sub 2/ laser

International Nuclear Information System (INIS)

Fujita, H.; Kitagawa, Y.; Daido, H.

1986-01-01

Experiments on electron acceleration have been performed by LEKKO VIII CO/sub 2/ laser system. The laser light was focused by an off-axis parabolic mirror with the F-number of 1.5 and irradiated to thin foil and pipe targets in order to obtain uniform underdense plasmas. Energy spectrum of electrons was measured by an electron spectrometer in the range of 0.3-1.1 MeV. In the single frequency case, electrons up to 1 MeV were observed in the direction of the laser axis for the laser intensity above 1.6 x 10/sup 14/ W/cm/sup 2/ which was equal to the estimated threshold for forward Raman scattering. Amount of high energy electrons depended on the interaction length and the background hot electron temperature. More electrons could resonate with the plasma wave for the higher hot electron temperature. This was confirmed by particle simulation. In most experiments, the plasma density was estimated of about 0.1 n/sub c/. When the plasma density was reduced to 0.01 n/sub c/ using pre-pulse, high energy electrons were not observed because of the low background hot electron temperature and the higher instability threshold. In the two frequency case, energetic electron beam injection is planned for efficient coupling with fast plasma wave. Pipe target seems to be hopeful because 1) the laser light is confined by the plasma fiber and 2) the phase velocity of the plasma wave is controlled by the transverse mode

The floating-gate non-volatile semiconductor memory--from invention to the digital age.

Science.gov (United States)

Sze, S M

2012-10-01

In the past 45 years (from 1967 to 2012), the non-volatile semiconductor memory (NVSM) has emerged from a floating-gate concept to the prime technology driver of the largest industry in the world-the electronics industry. In this paper, we briefly review the historical development of NVSM and project its future trends to the year 2020. In addition, we consider NVSM's wide-range of applications from the digital cellular phone to tablet computer to digital television. As the device dimension is scaled down to the deca-nanometer regime, we expect that many innovations will be made to meet the scaling challenges, and NVSM-inspired technology will continue to enrich and improve our lives for decades to come.

Experimental study of hot electrons propagation and energy deposition in solid or laser-shock compressed targets: applications to fast igniter

International Nuclear Information System (INIS)

Pisani, F.

2000-02-01

In the fast igniter scheme, a recent approach proposed for the inertial confinement fusion, the idea is to dissociate the fuel ignition phase from its compression. The ignition phase would be then achieved by means of an external energy source: a fast electron beam generated by the interaction with an ultra-intense laser. The main goal of this work is to study the mechanisms of the hot electron energy transfer to the compressed fuel. We intent in particular to study the role of the electric and collisional effects involved in the hot electron propagation in a medium with properties similar to the compressed fuel. We carried out two experiments, one at the Vulcan laser facility (England) and the second one at the new LULI 100 TW laser (France). During the first experiment, we obtained the first results on the hot electron propagation in a dense and hot plasma. The innovating aspect of this work was in particular the use of the laser-shock technique to generate high pressures, allowing the strongly correlated and degenerated plasma to be created. The role of the electric and magnetic effects due to the space charge associated with the fast electron beam has been investigated in the second experiment. Here we studied the propagation in materials with different electrical characteristics: an insulator and a conductor. The analysis of the results showed that only by taking into account simultaneously the two propagation mechanisms (collisions and electric effects) a correct treatment of the energy deposition is possible. We also showed the importance of taking into account the induced modifications due to the electrons beam crossing the target, especially the induced heating. (author)

Non-volatile memory based on the ferroelectric photovoltaic effect

Science.gov (United States)

Guo, Rui; You, Lu; Zhou, Yang; Shiuh Lim, Zhi; Zou, Xi; Chen, Lang; Ramesh, R.; Wang, Junling

2013-01-01

The quest for a solid state universal memory with high-storage density, high read/write speed, random access and non-volatility has triggered intense research into new materials and novel device architectures. Though the non-volatile memory market is dominated by flash memory now, it has very low operation speed with ~10 μs programming and ~10 ms erasing time. Furthermore, it can only withstand ~105 rewriting cycles, which prevents it from becoming the universal memory. Here we demonstrate that the significant photovoltaic effect of a ferroelectric material, such as BiFeO3 with a band gap in the visible range, can be used to sense the polarization direction non-destructively in a ferroelectric memory. A prototype 16-cell memory based on the cross-bar architecture has been prepared and tested, demonstrating the feasibility of this technique. PMID:23756366

Evidence of hot spot formation on carbon limiters due to thermal electron emission

International Nuclear Information System (INIS)

Philipps, V.; Samm, U.; Tokar, M.Z.; Unterberg, B.; Pospieszczyk, A.; Schweer, B.

1993-01-01

Carbon test limiters have been exposed in TEXTOR to high heat loads up to about 30 MW/m 2 . The evolutions of the surface temperature distribution and of the carbon release have been observed by means of local diagnostics. A sudden acceleration of the rise of the surface temperature has been found at a critical temperature of approx. 2400 deg. C. The increase of the rate of the temperature rise is consistent with an enhancement of the power loading by a factor of 2.5-3. Following the temperature jump (hot spot), a quasi-equilibrium temperature establishes at approx. 2700 deg. C. The development of the hot spot is explained by an increase of the local power loading to the breakdown of the sheath potential by thermal emission of electrons from the carbon surface. Simultaneously with the appearance of the hot spot, the carbon release from the surface increases sharply. This increase can be explained by normal thermal sublimation. Sublimation cooling contributes to the establishment of the quasi-equilibrium temperature at about 2700 deg. C. (author). 16 refs, 10 figs

Enhanced brightness of organic light-emitting diodes based on Mg:Ag cathode using alkali metal chlorides as an electron injection layer

International Nuclear Information System (INIS)

Zou Ye; Deng Zhenbo; Xu Denghui; Lü Zhaoyue; Yin Yuehong; Du Hailiang; Chen Zheng; Wang Yongsheng

2012-01-01

Different thicknesses of cesium chloride (CsCl) and various alkali metal chlorides were inserted into organic light-emitting diodes (OLEDs) as electron injection layers (EILs). The basic structure of OLED is indium tin oxide (ITO)/N,N′-diphenyl-N,N′-bis(1-napthyl-phenyl)-1.1′-biphenyl-4.4′-diamine (NPB)/tris-(8-hydroxyquinoline) aluminum (Alq 3 )/Mg:Ag/Ag. The electroluminescent (EL) performance curves show that both the brightness and efficiency of the OLEDs can be obviously enhanced by using a thin alkali metal chloride layer as an EIL. The electron injection barrier height between the Alq 3 layer and Mg:Ag cathode is reduced by inserting a thin alkali metal chloride as an EIL, which results in enhanced electron injection and electron current. Therefore, a better balance of hole and electron currents at the emissive interface is achieved and consequently the brightness and efficiency of OLEDs are improved. - Highlights: ► Alkaline metal chlorides were used as electron injection layers in organic light-emitting diodes based on Mg:Ag cathode. ► Brightness and efficiency of OLEDs with alkaline metal chlorides as electron injection layers were all greatly enhanced. ► The Improved OLED performance was attributed to the possible interfacial chemical reaction. ► Electron-only devices are fabricated to demonstrate the electron injection enhancement.

Volatile and Nonvolatile Characteristics of Asymmetric Dual-Gate Thyristor RAM with Vertical Structure.

Science.gov (United States)

Kim, Hyun-Min; Kwon, Dae Woong; Kim, Sihyun; Lee, Kitae; Lee, Junil; Park, Euyhwan; Lee, Ryoongbin; Kim, Hyungjin; Kim, Sangwan; Park, Byung-Gook

2018-09-01

In this paper, the volatile and nonvolatile characteristics of asymmetric dual-gate thyristor random access memory (TRAM) are investigated using the technology of a computer-aided design (TCAD) simulation. Owing to the use of two independent gates having different gate dielectric layers, volatile and nonvolatile memory functions can be realized in a single device. The first gate with a silicon oxide layer controls the one-transistor dynamic random access memory (1T-DRAM) characteristics of the device. From the simulation results, a rapid write speed (107) can be achieved. The second gate, whose dielectric material is composed of oxide/nitride/oxide (O/N/O) layers, is used to implement the nonvolatile property by trapping charges in the nitride layer. In addition, this offers an advantage when processing the 3D-stack memory application, as the device has a vertical channel structure with polycrystalline silicon.

Computations on injection into organics - or how to let electrons shine

NARCIS (Netherlands)

Uijttewaal, M.A.

2007-01-01

This thesis studies various aspects of electron injection into organic light-emitting diodes (OLEDs) using density functional theory and the master equation approach (only the last chapter). The first part of the thesis studies the relation between the work function and the surface stability of a

Breakdown assisted by a novel electron drift injection in the J-TEXT tokamak

International Nuclear Information System (INIS)

Wang, Nengchao; Jin, Hai; Zhuang, Ge; Ding, Yonghua; Pan, Yuan; Cen, Yishun; Chen, Zhipeng; Huang, Hai; Liu, Dequan; Rao, Bo; Zhang, Ming; Zou, Bichen

2014-01-01

A novel electron drift injection (EDI) system aiming to improve breakdown behavior has been designed and constructed on the Joint Texas EXperiment Tokamak Tokamak. Electrons emitted by the system undergo the E×B drift, ∇B drift and curvature drift in sequence in order to traverse the confining magnetic field. A local electrostatic well, generated by a concave-shaped plate biased more negative than the cathode, is introduced to interrupt the emitted electrons moving along the magnetic field line (in the parallel direction) in an attempt to bring an enhancement of the injection efficiency and depth. A series of experiments have demonstrated the feasibility of this method, and a penetration distance deeper than 9.5 cm is achieved. Notable breakdown improvements, including the reduction of breakdown delay and average loop voltage, are observed for discharges assisted by EDI. The lower limit of successfully ionized pressure is expanded

Injection of a single electron from static to moving quantum dots.

Science.gov (United States)

Bertrand, Benoit; Hermelin, Sylvain; Mortemousque, Pierre-André; Takada, Shintaro; Yamamoto, Michihisa; Tarucha, Seigo; Ludwig, Arne; Wieck, Andreas D; Bäuerle, Christopher; Meunier, Tristan

2016-05-27

We study the injection mechanism of a single electron from a static quantum dot into a moving quantum dot. The moving quantum dots are created with surface acoustic waves (SAWs) in a long depleted channel. We demonstrate that the injection process is characterized by an activation law with a threshold that depends on the SAW amplitude and on the dot-channel potential gradient. By sufficiently increasing the SAW modulation amplitude, we can reach a regime where the transfer has unity probability and is potentially adiabatic. This study points to the relevant regime to use moving dots in quantum information protocols.

Injection of electrons with predominantly perpendicular energy into an area of toroidal field ripple in a tokamak plasma to improve plasma confinement

Science.gov (United States)

Ono, Masayuki; Furth, Harold

1993-01-01

An electron injection scheme for controlling transport in a tokamak plasma. Electrons with predominantly perpendicular energy are injected into a ripple field region created by a group of localized poloidal field bending magnets. The trapped electrons then grad-B drift vertically toward the plasma interior until they are detrapped, charging the plasma negative. Calculations indicate that the highly perpendicular velocity electrons can remain stable against kinetic instabilities in the regime of interest for tokamak experiments. The penetration distance can be controlled by controlling the "ripple mirror ratio", the energy of the injected electrons, and their v.sub..perp. /v.sub.51 ratio. In this scheme, the poloidal torque due to the injected radial current is taken by the magnets and not by the plasma. Injection is accomplished by the flat cathode containing an ECH cavity to pump electrons to high v.sub..perp..

A hybrid magnetic/complementary metal oxide semiconductor three-context memory bit cell for non-volatile circuit design

International Nuclear Information System (INIS)

Jovanović, B.; Brum, R. M.; Torres, L.

2014-01-01

After decades of continued scaling to the beat of Moore's law, it now appears that conventional silicon based devices are approaching their physical limits. In today's deep-submicron nodes, a number of short-channel and quantum effects are emerging that affect the manufacturing process, as well as, the functionality of the microelectronic systems-on-chip. Spintronics devices that exploit both the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, are promising solutions to circumvent these scaling threats. Being compatible with the CMOS technology, such devices offer a promising synergy of radiation immunity, infinite endurance, non-volatility, increased density, etc. In this paper, we present a hybrid (magnetic/CMOS) cell that is able to store and process data both electrically and magnetically. The cell is based on perpendicular spin-transfer torque magnetic tunnel junctions (STT-MTJs) and is suitable for use in magnetic random access memories and reprogrammable computing (non-volatile registers, processor cache memories, magnetic field-programmable gate arrays, etc). To demonstrate the potential our hybrid cell, we physically implemented a small hybrid memory block using 45 nm × 45 nm round MTJs for the magnetic part and 28 nm fully depleted silicon on insulator (FD-SOI) technology for the CMOS part. We also report the cells measured performances in terms of area, robustness, read/write speed and energy consumption

A hybrid magnetic/complementary metal oxide semiconductor three-context memory bit cell for non-volatile circuit design

Energy Technology Data Exchange (ETDEWEB)

Jovanović, B., E-mail: bojan.jovanovic@lirmm.fr, E-mail: lionel.torres@lirmm.fr; Brum, R. M.; Torres, L. [LIRMM—University of Montpellier 2/UMR CNRS 5506, 161 Rue Ada, 34095 Montpellier (France)

2014-04-07

After decades of continued scaling to the beat of Moore's law, it now appears that conventional silicon based devices are approaching their physical limits. In today's deep-submicron nodes, a number of short-channel and quantum effects are emerging that affect the manufacturing process, as well as, the functionality of the microelectronic systems-on-chip. Spintronics devices that exploit both the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, are promising solutions to circumvent these scaling threats. Being compatible with the CMOS technology, such devices offer a promising synergy of radiation immunity, infinite endurance, non-volatility, increased density, etc. In this paper, we present a hybrid (magnetic/CMOS) cell that is able to store and process data both electrically and magnetically. The cell is based on perpendicular spin-transfer torque magnetic tunnel junctions (STT-MTJs) and is suitable for use in magnetic random access memories and reprogrammable computing (non-volatile registers, processor cache memories, magnetic field-programmable gate arrays, etc). To demonstrate the potential our hybrid cell, we physically implemented a small hybrid memory block using 45 nm × 45 nm round MTJs for the magnetic part and 28 nm fully depleted silicon on insulator (FD-SOI) technology for the CMOS part. We also report the cells measured performances in terms of area, robustness, read/write speed and energy consumption.

Choice of technological regimes of a blast furnace operation with injection of hot reducing gases

Directory of Open Access Journals (Sweden)

Babich, A. I.

2002-08-01

Full Text Available Injection rate of fossil fuels is limited because of drop in the flame temperature in the raceway and problems in the deadman region and the cohesive zone. The next step for obtaining a considerable coke saving, a better operation in the deadman as an well as increase in blast furnace productivity and minimizing the environmental impact due to a decrease in carbon dioxide emmision would be injection by tuyeres of hot reducing gases (HRG which are produced by low grade coal gasification or top gas regenerating. Use of HRG in combination with high pulverized coal inyection PCI rate and oxigen enrichment in the blast could allow to keep and to increase the competitiveness of the blast furnace process. Calculations using a mathematical model show that the HRG injection in combination with pulverized coal (PC and enriching blast with oxigen can provide an increase in PC rate up to 300-400 kg/tHM and a rise in the furnace productivity by 40-50 %. Blast furnace operation with full oxigen blast (100 % of process oxigen with the exception for the hot blast is possible when HRG is injected.

La tasa de inyección de combustibles fósiles está limitada a causa de la caída de la temperatura de llama en el raceway (cavidad frente a las toberas y a problemas en la región del "hombre muerto" y en la zona cohesiva. La inyección por tobera de gases reductores calientes (GRC, que se producen por gasificación de carbón de bajo grado o generación de gas de tragante, será la próxima etapa para lograr un considerable ahorro adicional de coque, una zona del "hombre muerto" bien definida, además de un aumento en la productividad del horno alto y para minimizar el impacto ambiental debido a una disminución de la emisión de dióxido de carbono. El uso de GRC en combinación con una tasa elevada de inyección de carbón pulverizado (ICP con viento enriquecido en oxígeno, podrá permitir mantener y aumentar la competitividad del proceso del horno

Study by electronic microscopy of corrosion features of graphite after hot oxidation (air, 620 C)

International Nuclear Information System (INIS)

Jodon de Villeroche, Suzanne

1968-01-01

The author reports the study of corrosion features of graphite after hot oxidation in the air at 620 C. It is based on observations made by electronic microscopy. This study comes after another one dedicated to oxidation features obtained by hot corrosion of natural graphite, and aims at comparing pyrolytic graphite before and after irradiation in an atomic pile, and at performing tests on a graphite processed with ozone. After a recall of generalities about natural graphite and of some issues related to hot corrosion of natural graphite, the author presents some characteristics and features of irradiated and non-irradiated pyrolytic graphite. He reports the study of the oxidation of samples of pyrolytic graphite: production of thin lamellae, production of glaze-carbon replicates, oxidation of irradiated and of non-irradiated graphite, healing of irradiation defects, and oxidation of ozone-processed natural graphite [fr

Probing hot-electron effects in wide area plasmonic surfaces using X-ray photoelectron spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Ayas, Sencer; Cupallari, Andi; Dana, Aykutlu, E-mail: aykutlu@unam.bilkent.edu.tr [UNAM Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara (Turkey)

2014-12-01

Plasmon enhanced hot carrier formation in metallic nanostructures increasingly attracts attention due to potential applications in photodetection, photocatalysis, and solar energy conversion. Here, hot-electron effects in nanoscale metal-insulator-metal (MIM) structures are investigated using a non-contact X-ray photoelectron spectroscopy based technique using continuous wave X-ray and laser excitations. The effects are observed through shifts of the binding energy of the top metal layer upon excitation with lasers of 445, 532, and 650 nm wavelength. The shifts are polarization dependent for plasmonic MIM grating structures fabricated by electron beam lithography. Wide area plasmonic MIM surfaces fabricated using a lithography free route by the dewetting of evaporated Ag on HfO{sub 2} exhibit polarization independent optical absorption and surface photovoltage. Using a simple model and making several assumptions about the magnitude of the photoemission current, the responsivity and external quantum efficiency of wide area plasmonic MIM surfaces are estimated as 500 nA/W and 11 × 10{sup −6} for 445 nm illumination.

Signatures of hot electrons and fluorescence in Mo Kα emission on Z

Energy Technology Data Exchange (ETDEWEB)

Hansen, S. B.; Ampleford, D. J.; Cuneo, M. E.; Jones, B.; Jennings, C. A.; Coverdale, C. A.; Rochau, G. A.; Dunham, G. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Ouart, N.; Dasgupta, A.; Giuliani, J. L. [Naval Research Laboratory, Washington, DC 20375 (United States); Apruzese, J. P. [Consultant to NRL through Engility Corp., Chantilly, Virginia 20151 (United States)

2014-03-15

Recent experiments on the Z accelerator have produced high-energy (17 keV) inner-shell K-alpha emission from molybdenum wire array z-pinches. Extensive absolute power and spectroscopic diagnostics along with collisional-radiative modeling enable detailed investigation into the roles of thermal, hot electron, and fluorescence processes in the production of high-energy x-rays. We show that changing the dimensions of the arrays can impact the proportion of thermal and non-thermal K-shell x-rays.

Improving Charge Injection in Organic Electronic Devices Using Self-Assembled Monolayers

Science.gov (United States)

Campbell, I. H.; Kress, J. D.; Martin, R. L.; Smith, D. L.; Barashkov, N. N.; Ferraris, J. P.

1997-03-01

Organic electronic devices consist of one or more insulating organic layers contacted by metallic conductors. The Schottky energy barrier between the metal and the organic material is determined by the work function of the metal contact as described in the ideal Schottky model. The magnitude of the metal/organic Schottky energy barrier controls charge injection from the metal into the organic layer. Previously, polar alkane-thiol based self-assembled monolayers (SAMs) were used to change the Schottky energy barrier between the metal and an organic film by more than 1 eV. In these SAMs, the large energy gap of the alkane molecules blocks charge injection into the organic layer despite the decrease of the Schottky energy barrier. Here, we demonstrate improved charge injection into the organic material by using conjugated self-assembled monolayers. The conjugated SAMs have modest energy gaps which allow improved charge injection into the organic layer. We present measurements of current-voltage characteristics and metal/organic Schottky energy barriers for device structures both with and without conjugated SAMs.

Low-Noise Wide Bandwith, Hot Electron Bolometer Mixers for Submillimeter Wavelengths

Science.gov (United States)

McGrath, W. R.

1995-01-01

Recently a novel superconductive hot-electron micro-bolometer has been proposed which is both fast and sensitive (D. E. Prober, Appl. Phys. Lett. 62, 2119, 1993). This device has several important properties which make it useful as a heterodyne sensor for radioastronomy applications at frequencies above 1 THz. The thermal response time of the device is fast enough, several 10's of picoseconds, to allow for IF's of several GHz. This bolometer mixer should operate well up to at least 10 THz. There is no energy gap limitation as in an SIS mixer, since the mixing process relies on heating of the electron gas. In fact, rf power is absorbed more uniformly above the gap frequency. The mixer noise should be near quantum-limited, and the local oscillator (LO) power requirement is very low: / 10 nW for a Nb device. One of the unique features of this device is that it employs rapid electron diffusion into a normal metal, rather than phonon emission, as the thermal conductance that cools the heated electrons. In order for diffusion to dominate over phonon emission, the device must be short, less than 0.5.

A model for hot electron phenomena: Theory and general results

International Nuclear Information System (INIS)

Carrillo, J.L.; Rodriquez, M.A.

1988-10-01

We propose a model for the description of the hot electron phenomena in semiconductors. Based on this model we are able to reproduce accurately the main characteristics observed in experiments of electric field transport, optical absorption, steady state photoluminescence and relaxation process. Our theory does not contain free nor adjustable parameters, it is very fast computerwise, and incorporates the main collision mechanisms including screening and phonon heating effects. Our description on a set of nonlinear rate equations in which the interactions are represented by coupling coefficients or effective frequencies. We calculate three coefficients from the characteristic constants and the band structure of the material. (author). 22 refs, 5 figs, 1 tab

Ion and electron injection in ionosphere and magnetosphere. Application to the parallel electric field measurement in auroral zones

International Nuclear Information System (INIS)

Pirre, M.

1982-11-01

New methods of measuring parallel electric field in auroral zones are investigated in this thesis. In the studied methods, artificial injection of ions Li + and electrons from a spacecraf is used. Measurements obtained during the ARAKS experiment are also presented. The behaviour of the ionospheric plasma located few hundred meters from a 0,5A electron beam injected in ionosphere from a rocket is studied, together with the behaviour of a Cs plasma artificially injected from the same spacecraft [fr

Numerical simulation of MH growth/dissociation by hot water injection on the Lab. experiment

Science.gov (United States)

Temma, N.; Sakamoto, Y.; Komai, T.; Yamaguchi, T.; Pawar, R.; Zyvoloski, G.

2005-12-01

Methane Hydrate (MH) is considered to be one of the new-generation energy resources. Aiming to develop the method of extraction of methane gas from MH, laboratory experiments have been performed in order to grasp the MH property in the National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba in Japan. In this paper, we present the results of the numerical simulation of experiment using by the hot water injection. In this calculation, FEHM (Finite Element Heat and Mass transfer) code is used. This code is developed at Los Alamos National Laboratory. In this experiment, temperature, pressure and cumulative gas production were measured. From these data, we suppose that MH growth/dissociation occurred by the flow of the hot water. And we make the model of the growth/dissociation. As this model consist of many parameters, it is difficult to determine parameters. Thus, we use PEST (Parameter ESTimation ) in order to determine parameters for the model of the MH growth/ dissociation. We use temperature data of experiment, as observed data. We make two observed data sets at the beginning and later term of experiment. At the results of PEST, we obtain two sets of parameters to get good match the observed data. We think that these sets indicate both the maximum and the minimum values of the MH growth/dissociation model. And, on this range, we continue to calculate until we get the good match. Finally, we obtain the numerical model of the experiment. Also, we conducted the sensitive analysis for the MH growth/ dissociation using this model.

Designing a Prototype LPG Injection Electronic Control Unit for a Carburetted Gasoline Engine

Directory of Open Access Journals (Sweden)

Barış ERKUŞ

2015-07-01

Full Text Available In this study, the originally carburetted gasoline engine was converted to gas-phase liquefied petroleum gas (LPG injection engine by using an after market LPG conversion kit's components except the electronic control unit (ECU. Instead of after market LPG injection ECU, the ECU which was designed considering the effects of  electromagnetic interference (EMI, was used for controlling injection. The designed ECU was tested in terms of EMI while the engine was being run and it was detected that the EMI noises could be suppressed as possible by taken measures. Designed ECU was used in performance tests at different engine conditions and the results obtained with LPG injection were compared with the results obtained with LPG carburetion. According to the performance test results, LPG injection ECU designed in this study could help to achieve low exhaust emissions and high engine performance.  

Estimating the Magnetic Field Strength in Hot Jupiters

Energy Technology Data Exchange (ETDEWEB)

Yadav, Rakesh K. [Department of Earth and Planetary Sciences, Harvard University, 20 Oxford Street, Cambridge, MA 02138 (United States); Thorngren, Daniel P., E-mail: rakesh_yadav@fas.harvard.edu [Department of Physics, University of California, Santa Cruz, CA (United States)

2017-11-01

A large fraction of known Jupiter-like exoplanets are inflated as compared to Jupiter. These “hot” Jupiters orbit close to their parent star and are bombarded with intense starlight. Many theories have been proposed to explain their radius inflation and several suggest that a small fraction of the incident starlight is injected into the planetary interior, which helps to puff up the planet. How will such energy injection affect the planetary dynamo? In this Letter, we estimate the surface magnetic field strength of hot Jupiters using scaling arguments that relate energy available in planetary interiors to the dynamo-generated magnetic fields. We find that if we take into account the energy injected in the planetary interior that is sufficient to inflate hot Jupiters to observed radii, then the resulting dynamo should be able generate magnetic fields that are more than an order of magnitude stronger than the Jovian values. Our analysis highlights the potential fundamental role of the stellar light in setting the field strength in hot Jupiters.

Crested Tunnel Barriers for Fast, Scalable, Nonvolatile Semiconductor Memories (Theme 3)

National Research Council Canada - National Science Library

Likharev, Konstantin K; Ma, Tso-Ping

2006-01-01

.... If demonstrated in silicon-compatible materials with sufficient endurance under electric stress, this effect may enable high-density, high-speed nonvolatile memories that may potentially replace DRAM...

Nonvolatile memory characteristics influenced by the different crystallization of Ni-Si and Ni-N nanocrystals

International Nuclear Information System (INIS)

Chen, W.-R.; Yeh, J.-L.; Chang, C.-Y.; Chang, T.-C.; Chen, S.-C.

2008-01-01

The formation of Ni-Si and Ni-N nanocrystals by sputtering a Ni 0.3 Si 0.7 target in argon and nitrogen environment were proposed in this paper. A transmission electron microscope analysis shows the nanocrystals embedded in the nitride layer. X-ray photoelectron spectroscopy and x-ray diffraction also offer the chemical material analysis of nanocrystals with surrounding dielectric and the crystallization of nanocrystals for different thermal annealing treatments. Nonvolatile Ni-Si nanocrystal memories reveal superior electrical characteristics for charge storage capacity and reliability due to the improvement of thermal annealing treatment. In addition, we used energy band diagrams to explain the significance of surrounding dielectric for reliability

Coulomb explosion of “hot spot”

Energy Technology Data Exchange (ETDEWEB)

Oreshkin, V. I., E-mail: oreshkin@ovpe.hcei.tsc.ru [Institute of High Current Electrons, SB, RAS, Tomsk (Russian Federation); Tomsk Polytechnic University, Tomsk (Russian Federation); Oreshkin, E. V. [P. N. Lebedev Physical Institute, RAS, Moscow (Russian Federation); Chaikovsky, S. A. [Institute of High Current Electrons, SB, RAS, Tomsk (Russian Federation); P. N. Lebedev Physical Institute, RAS, Moscow (Russian Federation); Institute of Electrophysics, UD, RAS, Ekaterinburg (Russian Federation); Artyomov, A. P. [Institute of High Current Electrons, SB, RAS, Tomsk (Russian Federation)

2016-09-15

The study presented in this paper has shown that the generation of hard x rays and high-energy ions, which are detected in pinch implosion experiments, may be associated with the Coulomb explosion of the hot spot that is formed due to the outflow of the material from the pinch cross point. During the process of material outflow, the temperature of the hot spot plasma increases, and conditions arise for the plasma electrons to become continuously accelerated. The runaway of electrons from the hot spot region results in the buildup of positive space charge in this region followed by a Coulomb explosion. The conditions for the hot spot plasma electrons to become continuously accelerated have been revealed, and the estimates have been obtained for the kinetic energy of the ions generated by the Coulomb explosion.

Coulomb explosion of “hot spot”

International Nuclear Information System (INIS)

Oreshkin, V. I.; Oreshkin, E. V.; Chaikovsky, S. A.; Artyomov, A. P.

2016-01-01

The study presented in this paper has shown that the generation of hard x rays and high-energy ions, which are detected in pinch implosion experiments, may be associated with the Coulomb explosion of the hot spot that is formed due to the outflow of the material from the pinch cross point. During the process of material outflow, the temperature of the hot spot plasma increases, and conditions arise for the plasma electrons to become continuously accelerated. The runaway of electrons from the hot spot region results in the buildup of positive space charge in this region followed by a Coulomb explosion. The conditions for the hot spot plasma electrons to become continuously accelerated have been revealed, and the estimates have been obtained for the kinetic energy of the ions generated by the Coulomb explosion.

Observations of fast magnetospheric echoes of artificially injected electrons above an auroral arc

International Nuclear Information System (INIS)

Wilhelm, K.; Becker, C.; Schmidt, R.

1984-04-01

Electron beam experiments using rocket-borne instrumentation have confirmed earlier observations of fast magnetospheric echoes of artificially injected energetic electrons. These experiments were jointly carried out by the University of Minnesota, the National Research Council of Canada and the Max-Planck-Institut fuer Aeronomie. A total of 234 echoes have been observed in a pitch angle range from 0 0 to 110 0 at energies of 1.87 and 3.90 keV. Out of this number, 95 echoes could unambiguously be identified with known accelerator operations at 2, 4 or 8 keV energy and highest current levels resulting in the determination of transit times of typically 400 ms. In most cases, when echoes were present in both energy channels, the higher energy electrons led the lower energy ones by approximately 50 ms. No echoes have been found in the 7.9 keV-detector channels. Adiabatic theory applied to these observations yields a reflection height of 3000 to 4000 km. The injection process is briefly discussed as the strong beam-plasma interaction that occurred near the electron accelerator appears to be instrumental in generating the source of heated electrons required for successful echo detection. Two consequences of this interaction, namely, strong energy and pitch angle diffusion and electron acceleration are illustrated with several examples. (orig.) [de

Measurements of non-volatile aerosols with a VTDMA and their correlations with carbonaceous aerosols in Guangzhou, China

Directory of Open Access Journals (Sweden)

H. H. Y. Cheung

2016-07-01

Full Text Available Simultaneous measurements of aerosol volatility and carbonaceous matters were conducted at a suburban site in Guangzhou, China, in February and March 2014 using a volatility tandem differential mobility analyzer (VTDMA and an organic carbon/elemental carbon (OC ∕ EC analyzer. Low volatility (LV particles, with a volatility shrink factor (VSF at 300 °C exceeding 0.9, contributed 5 % of number concentrations of the 40 nm particles and 11–15 % of the 80–300 nm particles. They were composed of non-volatile material externally mixed with volatile material, and therefore did not evaporate significantly at 300 °C. Non-volatile material mixed internally with the volatile material was referred to as medium volatility (MV, 0.4  <  VSF  <  0.9 and high volatility (HV, VSF  <  0.4 particles. The MV and HV particles contributed 57–71 % of number concentration for the particles between 40 and 300 nm in size. The average EC and OC concentrations measured by the OC ∕ EC analyzer were 3.4 ± 3.0 and 9.0 ± 6.0 µg m−3, respectively. Non-volatile OC evaporating at 475 °C or above, together with EC, contributed 67 % of the total carbon mass. In spite of the daily maximum and minimum, the diurnal variations in the volume fractions of the volatile material, HV, MV and LV residuals were less than 15 % for the 80–300 nm particles. Back trajectory analysis also suggests that over 90 % of the air masses influencing the sampling site were well aged as they were transported at low altitudes (below 1500 m for over 40 h before arrival. Further comparison with the diurnal variations in the mass fractions of EC and the non-volatile OC in PM2.5 suggests that the non-volatile residuals may be related to both EC and non-volatile OC in the afternoon, during which the concentration of aged organics increased. A closure analysis of the total mass of LV and MV residuals and the mass of EC or the

Influence of heat exchange of reservoir with rocks on hot gas injection via a single well

Science.gov (United States)

Nikolaev, Vladimir E.; Ivanov, Gavril I.

2017-11-01

In the computational experiment the influence of heat exchange through top and bottom of the gas-bearing reservoir on the dynamics of temperature and pressure fields during hot gas injection via a single well is investigated. The experiment was carried out within the framework of modified mathematical model of non-isothermal real gas filtration, obtained from the energy and mass conservation laws and the Darcy law. The physical and caloric equations of state together with the Newton-Riemann law of heat exchange of gas reservoir with surrounding rocks, are used as closing relations. It is shown that the influence of the heat exchange with environment on temperature field of the gas-bearing reservoir is localized in a narrow zone near its top and bottom, though the size of this zone is increased with time.

Modelling transient temperature distribution for injecting hot water through a well to an aquifer thermal energy storage system

Science.gov (United States)

Yang, Shaw-Yang; Yeh, Hund-Der; Li, Kuang-Yi

2010-10-01

Heat storage systems are usually used to store waste heat and solar energy. In this study, a mathematical model is developed to predict both the steady-state and transient temperature distributions of an aquifer thermal energy storage (ATES) system after hot water is injected through a well into a confined aquifer. The ATES has a confined aquifer bounded by aquicludes with different thermomechanical properties and geothermal gradients along the depth. Consider that the heat is transferred by conduction and forced convection within the aquifer and by conduction within the aquicludes. The dimensionless semi-analytical solutions of temperature distributions of the ATES system are developed using Laplace and Fourier transforms and their corresponding time-domain results are evaluated numerically by the modified Crump method. The steady-state solution is obtained from the transient solution through the final-value theorem. The effect of the heat transfer coefficient on aquiclude temperature distribution is appreciable only near the outer boundaries of the aquicludes. The present solutions are useful for estimating the temperature distribution of heat injection and the aquifer thermal capacity of ATES systems.

Design exploration of emerging nano-scale non-volatile memory

CERN Document Server

Yu, Hao

2014-01-01

This book presents the latest techniques for characterization, modeling and design for nano-scale non-volatile memory (NVM) devices.  Coverage focuses on fundamental NVM device fabrication and characterization, internal state identification of memristic dynamics with physics modeling, NVM circuit design, and hybrid NVM memory system design-space optimization. The authors discuss design methodologies for nano-scale NVM devices from a circuits/systems perspective, including the general foundations for the fundamental memristic dynamics in NVM devices.  Coverage includes physical modeling, as well as the development of a platform to explore novel hybrid CMOS and NVM circuit and system design.   • Offers readers a systematic and comprehensive treatment of emerging nano-scale non-volatile memory (NVM) devices; • Focuses on the internal state of NVM memristic dynamics, novel NVM readout and memory cell circuit design, and hybrid NVM memory system optimization; • Provides both theoretical analysis and pr...

The influence of thickness on memory characteristic based on nonvolatile tuning behavior in poly(N-vinylcarbazole) films

International Nuclear Information System (INIS)

Sun, Yanmei; Ai, Chunpeng; Lu, Junguo; Li, Lei; Wen, Dianzhong; Bai, Xuduo

2016-01-01

The memory characteristic based on nonvolatile tuning behavior in indium tin oxide/poly(N-vinylcarbazole)/aluminum (ITO/PVK/Al) was investigated, the different memory behaviors were first observed in PVK film as the film thickness changing. By control of PVK film thickness with different spinning speeds, the nonvolatile behavior of ITO/PVK/Al sandwich structure can be tuned in a controlled manner. Obviously different nonvolatile behaviors, such as (i) flash memory behavior and (ii) write-once-read-many times (WORM) memory behavior are from the current–voltage (I–V) characteristics of the PVK films. The results suggest that the film thickness plays a key part in determining the memory type of the PVK. - Highlights: • The different memory behaviors were observed in PVK film. • The nonvolatile behavior of ITO/PVK/Al sandwich structure can be tuned. • The film thickness plays a key part in determining the memory type of the PVK.

Air system in the hot cell for injectable radiopharmaceutical production: requirements for personnel and environment safety and protection of the product

Energy Technology Data Exchange (ETDEWEB)

Campos, Fabio E.; Araujo, Elaine B., E-mail: fecampos@ipen.b, E-mail: ebaraujo@ipen.b [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil)

2009-07-01

Radiopharmaceuticals are applied in Nuclear Medicine in diagnostic and therapeutic procedures and must be manufactured in accordance with the basic principles of Good Manufacturing Practices (GMP) for sterile pharmaceutical products. In order to prevent the uncontrolled spread of radioactive contamination, the processing of radioactive materials requires an exhausted and shielded special enclosure called hot cell. The quality of air inside the hot cell must be controlled in order to prevent the contamination of the product with particulate material or microorganisms. On the other hand, the hot cell must prevent external contamination with radioactive material. The aim of this work is to discuss the special requirements for hot cells taking in account the national rules for injectable pharmaceutical products and international standards available. Ventilation of radiopharmaceutical production facilities should meet the requirement to prevent the contamination of products and the exposure of working personnel to radioactivity. Positive pressure areas should be used to process sterile products. In general, any radioactivity should handle within specifically designed areas maintained under negative pressures. The production of sterile radioactive products should therefore be carried out under negative pressure surrounded by a positive pressure zone ensuring that appropriate air quality requirements are met. Some of the recent developments in the use of radioisotopes in medical field have also significantly impacted on the evolution of handling facilities. Application of pharmaceutical GMP requirements for air quality and processing conditions in the handling facilities of radioactive pharmaceuticals has led to significant improvements in the construction of isolator-like hot cells and clean rooms with HEPA filtered ventilation and air conditioning (HVAC) systems. Clean grade A (class 100) air quality hot cells are now available commercially, but in a high cost

Air system in the hot cell for injectable radiopharmaceutical production: requirements for personnel and environment safety and protection of the product

International Nuclear Information System (INIS)

Campos, Fabio E.; Araujo, Elaine B.

2009-01-01

Radiopharmaceuticals are applied in Nuclear Medicine in diagnostic and therapeutic procedures and must be manufactured in accordance with the basic principles of Good Manufacturing Practices (GMP) for sterile pharmaceutical products. In order to prevent the uncontrolled spread of radioactive contamination, the processing of radioactive materials requires an exhausted and shielded special enclosure called hot cell. The quality of air inside the hot cell must be controlled in order to prevent the contamination of the product with particulate material or microorganisms. On the other hand, the hot cell must prevent external contamination with radioactive material. The aim of this work is to discuss the special requirements for hot cells taking in account the national rules for injectable pharmaceutical products and international standards available. Ventilation of radiopharmaceutical production facilities should meet the requirement to prevent the contamination of products and the exposure of working personnel to radioactivity. Positive pressure areas should be used to process sterile products. In general, any radioactivity should handle within specifically designed areas maintained under negative pressures. The production of sterile radioactive products should therefore be carried out under negative pressure surrounded by a positive pressure zone ensuring that appropriate air quality requirements are met. Some of the recent developments in the use of radioisotopes in medical field have also significantly impacted on the evolution of handling facilities. Application of pharmaceutical GMP requirements for air quality and processing conditions in the handling facilities of radioactive pharmaceuticals has led to significant improvements in the construction of isolator-like hot cells and clean rooms with HEPA filtered ventilation and air conditioning (HVAC) systems. Clean grade A (class 100) air quality hot cells are now available commercially, but in a high cost

On the relaxation of cold electrons and hot ions

International Nuclear Information System (INIS)

Potapenko, I.F.; Bobylev, A.V.; Azevedo, C.A. de; Sakanaka, P.H.; Assis, A.S. de

1998-01-01

The relaxation process of a space uniform plasma composed of cold electrons and one species of hot ions is studied numerically using one- and two-dimensional Landau - Fokker - Planck codes. Relaxation of a monoenergetic ion beam is considered in possibly extreme temperature regimes. Special attention is paid to the deviation of the relaxation process from the classical picture, which is characterized by the close initial temperatures T e >(m e /m i ) 1/3 T i . The present results give quite a clear idea of the relaxation picture for any initial temperatures also in extreme temperature regimes. A difference scheme, preserving the number of particles and the energy, gives the possibility of solving the problem numerically without error accumulation, except for machine errors. copyright 1998 American Institute of Physics

The development of terahertz superconducting hot-electron bolometric mixers

International Nuclear Information System (INIS)

Semenov, Alexei; Richter, Heiko; Smirnov, Konstantin; Voronov, Boris; Gol'tsman, Gregory; Huebers, Heinz-Wilhelm

2004-01-01

We present recent advances in the development of NbN hot-electron bolometric (HEB) mixers for flying terahertz heterodyne receivers. Three important issues have been addressed: the quality of the source NbN films, the effect of the bolometer size on the spectral properties of different planar feed antennas, and the local oscillator (LO) power required for optimal operation of the mixer. Studies of the NbN films with an atomic force microscope indicated a surface structure that may affect the performance of the smallest mixers. Measured spectral gain and noise temperature suggest that at frequencies above 2.5 THz the spiral feed provides better overall performance than the double-slot feed. Direct measurements of the optimal LO power support earlier estimates made in the framework of the uniform mixer model

Echo 2: a study of electron beams injected into the high-latitude ionosphere from a large sounding rocket

International Nuclear Information System (INIS)

Winckler, J.R.; Arnoldy, R.L.; Hendrickson, R.A.

1975-01-01

The Black Brant V-C Echo 2 rocket was launched at Fort Churchill on September 25, 1972, and it injected 64-ms pulses of electron beams of 80-mA current and 45-keV voltage into the ionosphere. This paper studies the responses of on-board electrostatic deflection and solid state detectors to injected electrons after motion in the near ionosphere and atmosphere. It is shown that it was only through some form of scattering that the detectors could sense the injected beam electrons. By means of 'phase maps' of injection and detection pitch angles a number of distinct regions are found corresponding to a rocket scattering halo, an atmospheric scattering halo, a region of weak responses, and a source of strong scattering above the rocket. The atmospheric scattering has been compared with the theoretical and experimental results of the Echo 1 experiment, and it is found to be in reasonable agreement. The rocket halo is discussed qualitatively; but no explanation is found for the backscatter from above the rocket, which may be associated with an occasional violent beam instability. This analysis has been carried out to better understand the complexities of electron motion observed near large rockets carrying artifical electron accelerators as a guide in the planning of future experiments

Overview of one transistor type of hybrid organic ferroelectric non-volatile memory

Institute of Scientific and Technical Information of China (English)

Young; Tea; Chun; Daping; Chu

2015-01-01

Organic ferroelectric memory devices based on field effect transistors that can be configured between two stable states of on and off have been widely researched as the next generation data storage media in recent years.This emerging type of memory devices can lead to a new instrument system as a potential alternative to previous non-volatile memory building blocks in future processing units because of their numerous merits such as cost-effective process,simple structure and freedom in substrate choices.This bi-stable non-volatile memory device of information storage has been investigated using several organic or inorganic semiconductors with organic ferroelectric polymer materials.Recent progresses in this ferroelectric memory field,hybrid system have attracted a lot of attention due to their excellent device performance in comparison with that of all organic systems.In this paper,a general review of this type of ferroelectric non-volatile memory is provided,which include the device structure,organic ferroelectric materials,electrical characteristics and working principles.We also present some snapshots of our previous study on hybrid ferroelectric memories including our recent work based on zinc oxide nanowire channels.

Conjugate echoes of artifically injected electron beams detected optically by means of new image processing

International Nuclear Information System (INIS)

Hallinan, T.J.; Stenbaek-Nielsen, H.C.; Baldridge, J.; Winckler, J.; Malcolm, P.

1990-01-01

Following two upward injections of energetic electrons (38 keV and 26 keV) from the Echo 4 rocket-borne electron accelerator, artificial auroral streaks were detected by ground-based low-light-level television. They were delayed relative to the injections by 2.06 s and 2.42 s, respectively. The delays are only 4-5% longer than calculated using a dynamic model of the geomagnetic field. Other field models yielded shorter bounce times. Since the delays were in the inverse ratio of the relativistic velocities calculated for the nominal beam energies, it is concluded that the potential of the payload remained below 1 kV during 45 mA injections at an altitude of 210 km. The echo streaks showed little dispersion in either time or space, indicating that the portion of the beam returning to the northen hemisphere loss cone remained collimated and nearly monoenergetic. But there was a 70% loss in the return flux. A diligent search failed to locate similar echoes from the more powerful injections employed in the Echo 5 and Echo 7 rocket experiments, suggesting flux losses of at least 98% and 92%, respectively. The losses are thought to be due to pitch angle scattering out of the loss cone as the electrons traverse the equatorial region but could also be due to collective beam plasma interactions

Laser injection of ultra-short electron bursts for the diagnosis of Hall thruster plasma

International Nuclear Information System (INIS)

Albarede, L; Gibert, T; Lazurenko, A; Bouchoule, A

2006-01-01

The present developments of Hall thrusters for satellite control and space mission technologies represent a new step towards their routine use in place of conventional thermal thrusters. In spite of their long R and D history, the complex physics of the E x B discharge at work in these structures has prevented, up to now, the availability of predictive simulations. The electron transport in the accelerating layers of these thrusters is one of the remaining challenges in this direction. From the experimental point of view, any diagnostics of electron transport and electric field in this critical layer would be welcome for comparison with code predictions. Appropriate diagnostics are difficult, due to the very aggressive local plasma conditions. This paper presents the first step in the development of a new tool for characterization of the plasma electric field in the very near exhaust thruster plume and comparison with simulation code predictions. The main idea is to use very short bursts of electrons, probing local electron dynamics in this critical plume area. Such bursts can be obtained through photoelectric emission induced by a UV pulsed laser beam on a convenient target. A specific study, devoted to the characterization of the electron burst emission, is presented in the first section of the paper; the implementation and testing of the injection of electrons in the critical layer of Hall thruster plasma is described in the second section. The design and testing of a fast and sensitive system for characterizing the transport of injected bursts will be the next step of this program. It requires a preliminary evaluation of electron trajectories which was achieved by using simulation code. Simulation data are presented in the last section of the paper, with the full diagnostic design to be tested in the near future, when runs will be available in the renewed PIVOINE facility. The same electron burst injection could also be a valuable input in the present

High-performance non-volatile organic ferroelectric memory on banknotes

KAUST Repository

Khan, Yasser

2012-03-21

High-performance non-volatile polymer ferroelectric memory are fabricated on banknotes using poly(vinylidene fluoride trifluoroethylene). The devices show excellent performance with high remnant polarization, low operating voltages, low leakage, high mobility, and long retention times. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High-performance non-volatile organic ferroelectric memory on banknotes.

Science.gov (United States)

Khan, M A; Bhansali, Unnat S; Alshareef, H N

2012-04-24

High-performance non-volatile polymer ferroelectric memory are fabricated on banknotes using poly(vinylidene fluoride trifluoroethylene). The devices show excellent performance with high remnant polarization, low operating voltages, low leakage, high mobility, and long retention times. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Inkjet-printing of non-volatile organic resistive devices and crossbar array structures

Science.gov (United States)

Sax, Stefan; Nau, Sebastian; Popovic, Karl; Bluemel, Alexander; Klug, Andreas; List-Kratochvil, Emil J. W.

2015-09-01

Due to the increasing demand for storage capacity in various electronic gadgets like mobile phones or tablets, new types of non-volatile memory devices have gained a lot of attention over the last few years. Especially multilevel conductance switching elements based on organic semiconductors are of great interest due to their relatively simple device architecture and their small feature size. Since organic semiconductors combine the electronic properties of inorganic materials with the mechanical characteristics of polymers, this class of materials is suitable for solution based large area device preparation techniques. Consequently, inkjet based deposition techniques are highly capable of facing preparation related challenges. By gradually replacing the evaporated electrodes with inkjet printed silver, the preparation related influence onto device performance parameters such as the ON/OFF ratio was investigated with IV measurements and high resolution transmission electron microscopy. Due to the electrode surface roughness the solvent load during the printing of the top electrode as well as organic layer inhomogeneity's the utilization in array applications is hampered. As a prototypical example a 1diode-1resistor element and a 2×2 subarray from 5×5 array matrix were fully characterized demonstrating the versatility of inkjet printing for device preparation.

Study of Hot-Electron Effects, Breakdown and Reliability in FETS, HEMTS, and HBT’S

Science.gov (United States)

1998-08-01

device (VDS = 7.5 V, VQS = -0.1 V, 137 hrs). (b) Drain Current FT-DLTS measurements in an as received device (open simbols ) and in a device after hot...electron stress test: VDS = 7.5 V, VQS = - 0.1 V, 137 hrs (closed simbols ). output characteristics of degraded devices and completely eliminates

Pulse radiolysis based on a femtosecond electron beam and a femtosecond laser light with double-pulse injection technique

International Nuclear Information System (INIS)

Yang Jinfeng; Kondoh, Takafumi; Kozawa, Takahiro; Yoshida, Youichi; Tagawa, Seiichi

2006-01-01

A new pulse radiolysis system based on a femtosecond electron beam and a femtosecond laser light with oblique double-pulse injection was developed for studying ultrafast chemical kinetics and primary processes of radiation chemistry. The time resolution of 5.2 ps was obtained by measuring transient absorption kinetics of hydrated electrons in water. The optical density of hydrated electrons was measured as a function of the electron charge. The data indicate that the double-laser-pulse injection technique was a powerful tool for observing the transient absorptions with a good signal to noise ratio in pulse radiolysis

Jet noise reduction via dispersed phase injection

Science.gov (United States)

Greska, Brent; Krothapalli, Anjaneyulu; Arakeri, Vijay

2001-11-01

A recently developed hot jet aeroacoustics facility at FMRL,FAMU-FSU College of Engineering has been used to study the far field noise characteristics of hot supersonic jets as influenced by the injection of a dispersed phase with low mass loading.The measured SPL from a fully expanded Mach 1.36 hot jet shows a peak value of about 139 dB at 40 deg from the jet axis.By injecting atomized water,the SPL are reduced in the angular region of about 30 deg to 50 deg with the maximum reduction being about 2 dB at 40 deg.However,with the use of non atomized aqueous polymer solution as a dispersed phase the noise levels are reduced over all angular positions by at least 1 dB with the maximum reduction being about 3 dB at 40 deg.The injection of a dispersed phase readily kills the screech; the initial results show promise and optimization studies are underway to find methods of further noise reduction.

Optical Absorption and Electron Injection of 4-(Cyanomethylbenzoic Acid Based Dyes: A DFT Study

Directory of Open Access Journals (Sweden)

Yuehua Zhang

2015-01-01

Full Text Available Density functional theory (DFT and time-dependent density functional theory (TDDFT calculations were carried out to study the ground state geometries, electronic structures, and absorption spectra of 4-(cyanomethylbenzoic acid based dyes (AG1 and AG2 used for dye-sensitized solar cells (DSSCs. The excited states properties and the thermodynamical parameters of electron injection were studied. The results showed that (a two dyes have uncoplanar structures along the donor unit and conjugated bridge space, (b two sensitizers exhibited intense absorption in the UV-Vis region, and (c the excited state oxidation potential was higher than the conduction band edge of TiO2 photoanode. As a result, a solar cell based on the 4-(cyanomethylbenzoic acid based dyes exhibited well photovoltaic performance. Furthermore, nine dyes were designed on the basis of AG1 and AG2 to improve optical response and electron injection.

Nonvolatile resistive switching in Pt/laALO3/srTiO3 heterostructures

KAUST Repository

Wu, S.

2013-12-12

Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures, where the conducting layer near the LaAlO3/SrTiO3 interface serves as the "unconventional"bottom electrode although both oxides are band insulators. Interestingly, the switching between low-resistance and high-resistance states is accompanied by reversible transitions between tunneling and Ohmic characteristics in the current transport perpendicular to the planes of the heterojunctions. We propose that the observed resistive switching is likely caused by the electric-field-induced drift of charged oxygen vacancies across the LaAlO3/SrTiO3 interface and the creation of defect-induced gap states within the ultrathin LaAlO3 layer. These metal-oxide-oxide heterojunctions with atomically smooth interfaces and defect-controlled transport provide a platform for the development of nonvolatile oxide nanoelectronics that integrate logic and memory devices.

Investigation of the aluminium-aluminium oxide reversible transformation as observed by hot stage electron microscopy.

Science.gov (United States)

Grove, C. A.; Judd, G.; Ansell, G. S.

1972-01-01

Thin foils of high purity aluminium and an Al-Al2O3 SAP type of alloy were oxidised in a specially designed hot stage specimen chamber in an electron microscope. Below 450 C, amorphous aluminium oxide formed on the foil surface and was first detectable at foil edges, holes, and pits. Islands of aluminium then nucleated in this amorphous oxide. The aluminium islands displayed either a lateral growth with eventual coalescence with other islands, or a reoxidation process which caused the islands to disappear. The aluminium island formation was determined to be related to the presence of the electron beam. A mechanism based upon electron charging due to the electron beam was proposed to explain the nucleation, growth, coalescence, disappearance, and geometry of the aluminium islands.

Elastic scattering by hot electrons and apparent lifetime of longitudinal optical phonons in gallium nitride

Energy Technology Data Exchange (ETDEWEB)

Khurgin, Jacob B., E-mail: jakek@jhu.edu [Department of Electrical and Computer Engineering, Johns Hopkins University, Baltimore, Maryland 21218 (United States); Bajaj, Sanyam; Rajan, Siddharth [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)

2015-12-28

Longitudinal optical (LO) phonons in GaN generated in the channel of high electron mobility transistors (HEMT) are shown to undergo nearly elastic scattering via collisions with hot electrons. The net result of these collisions is the diffusion of LO phonons in the Brillouin zone causing reduction of phonon and electron temperatures. This previously unexplored diffusion mechanism explicates how an increase in electron density causes reduction of the apparent lifetime of LO phonons, obtained from the time resolved Raman studies and microwave noise measurements, while the actual decay rate of the LO phonons remains unaffected by the carrier density. Therefore, the saturation velocity in GaN HEMT steadily declines with increased carrier density, in a qualitative agreement with experimental results.

Effect of energetic electrons on dust charging in hot cathode filament discharge