Structural anisotropy of nonpolar and semipolar InN epitaxial layers

Science.gov (United States)

Darakchieva, V.; Xie, M.-Y.; Franco, N.; Giuliani, F.; Nunes, B.; Alves, E.; Hsiao, C. L.; Chen, L. C.; Yamaguchi, T.; Takagi, Y.; Kawashima, K.; Nanishi, Y.

2010-10-01

We present a detailed study of the structural characteristics of molecular beam epitaxy grown nonpolar InN films with a- and m-plane surface orientations on r-plane sapphire and (100) γ-LiAlO2, respectively, and semipolar (101¯1) InN grown on r-plane sapphire. The on-axis rocking curve (RC) widths were found to exhibit anisotropic dependence on the azimuth angle with minima at InN [0001] for the a-plane films, and maxima at InN [0001] for the m-plane and semipolar films. The different contributions to the RC broadening are analyzed and discussed. The finite size of the crystallites and extended defects are suggested to be the dominant factors determining the RC anisotropy in a-plane InN, while surface roughness and curvature could not play a major role. Furthermore, strategy to reduce the anisotropy and magnitude of the tilt and minimize defect densities in a-plane InN films is suggested. In contrast to the nonpolar films, the semipolar InN was found to contain two domains nucleating on zinc-blende InN(111)A and InN(111)B faces. These two wurtzite domains develop with different growth rates, which was suggested to be a consequence of their different polarity. Both, a- and m-plane InN films have basal stacking fault densities similar or even lower compared to nonpolar InN grown on free-standing GaN substrates, indicating good prospects of heteroepitaxy on foreign substrates for the growth of InN-based devices.

Structural anisotropy of nonpolar and semipolar InN epitaxial layers

International Nuclear Information System (INIS)

Darakchieva, V.; Xie, M.-Y.; Franco, N.; Alves, E.; Giuliani, F.; Nunes, B.; Hsiao, C. L.; Chen, L. C.; Yamaguchi, T.; Takagi, Y.; Kawashima, K.; Nanishi, Y.

2010-01-01

We present a detailed study of the structural characteristics of molecular beam epitaxy grown nonpolar InN films with a- and m-plane surface orientations on r-plane sapphire and (100) γ-LiAlO 2 , respectively, and semipolar (1011) InN grown on r-plane sapphire. The on-axis rocking curve (RC) widths were found to exhibit anisotropic dependence on the azimuth angle with minima at InN [0001] for the a-plane films, and maxima at InN [0001] for the m-plane and semipolar films. The different contributions to the RC broadening are analyzed and discussed. The finite size of the crystallites and extended defects are suggested to be the dominant factors determining the RC anisotropy in a-plane InN, while surface roughness and curvature could not play a major role. Furthermore, strategy to reduce the anisotropy and magnitude of the tilt and minimize defect densities in a-plane InN films is suggested. In contrast to the nonpolar films, the semipolar InN was found to contain two domains nucleating on zinc-blende InN(111)A and InN(111)B faces. These two wurtzite domains develop with different growth rates, which was suggested to be a consequence of their different polarity. Both, a- and m-plane InN films have basal stacking fault densities similar or even lower compared to nonpolar InN grown on free-standing GaN substrates, indicating good prospects of heteroepitaxy on foreign substrates for the growth of InN-based devices.

High-surface-quality nanocrystalline InN layers deposited on GaN templates by RF sputtering

Energy Technology Data Exchange (ETDEWEB)

Valdueza-Felip, Sirona; Naranjo, Fernando B.; Gonzalez-Herraez, Miguel [Grupo de Ingenieria Fotonica, Departamento de Electronica, Escuela Politecnica Superior, Universidad de Alcala, Campus Universitario, 28871 Alcala de Henares, Madrid (Spain); Lahourcade, Lise; Monroy, Eva [Equipe mixte CEA-CNRS-UJF, Nanophysique et Semiconducteurs, INAC/SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Fernandez, Susana [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Avda. Complutense 22, 28040 Madrid (Spain)

2011-01-15

We report a detailed study of the effect of deposition parameters on optical, structural, and morphological properties of InN films grown by reactive radio-frequency (RF) sputtering on GaN-on-sapphire templates in a pure nitrogen atmosphere. Deposition parameters under study are substrate temperature, RF power, and sputtering pressure. Wurtzite crystallographic structure with c-axis preferred growth orientation is confirmed by X-ray diffraction measurements. For the optimized deposition conditions, namely at a substrate temperature of 450 C and RF power of 30 W, InN films present a root-mean-square surface roughness as low as {proportional_to}0.4 nm, comparable to the underlying substrate. The apparent optical bandgap is estimated at 720 nm (1.7 eV) in all cases. However, the InN absorption band tail is strongly influenced by the sputtering pressure due to a change in the species of the plasma. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Continued development of a non-proprietary, high-tension, cable end terminal system.

Science.gov (United States)

2016-04-29

A non-proprietary, cable guardrail system is currently under development for the Midwest States Pooled Fund Program. : A cable guardrail end terminal was necessary to accompany the cable guardrail system. The objective of this research : project was ...

Superconductivity in MBE grown InN

Energy Technology Data Exchange (ETDEWEB)

Gunes, M.; Balkan, N. [School of Computer Science and Electronic Engineering, University of Essex, Wivenhoe Park, CO4 3SQ, Colchester (United Kingdom); Tiras, E.; Ardali, S. [Department of Physics, Faculty of Science, Anadolu University, Yunus Emre Campus, 26470, Eskisehir (Turkey); Ajagunna, A.O.; Iliopoulos, E.; Georgakilas, A. [Microelectronics Research Group, IESL, FORTH and Physics Department, University of Crete, P.O. Box 1385, 71110 Heraklion, Crete (Greece)

2011-05-15

We present the experimental investigation of superconductivity in unintentionally doped MBE grown InN samples with various InN film thicknesses. A significant change in resistivity was observed at 3.82 K, for an 1080 nm InN layer with carrier concentration n{sub 3D}=1.185x10{sup 19} cm{sup -3}. However, no significant resistance change was observed in the case of InN samples with carrier density of 1.024x10{sup 19} cm{sup -3}, 1.38x10{sup 19} cm{sup -3}, and thicknesses of 2070 and 4700 nm, respectively. The carrier density of all investigated samples was within the range of values between the Mott transition (2x10{sup 17} cm{sup -3}) and the superconductivity to metal transition (7x10{sup 20} cm{sup -3}). We believe that at lower temperatures ({sup 3}He) which we cannot achieve with our set-up, the phase transition in other samples is likely to be observed. The origin of the observed anisotropic type-II superconductivity is discussed (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Structural and elastic properties of InN nanowires

Energy Technology Data Exchange (ETDEWEB)

Quddus, Ehtesham B.; Wilson, Alina; Liu, Jie; Cai, Zhihua; Veereddy, Deepak; Tao, Xinyong; Li, Xiaodong; Koley, Goutam [Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208 (United States); Webb, Richard A. [Department of Physics and Astronomy and USC Nanocenter, University of South Carolina, Columbia, SC 29208 (United States)

2012-04-15

Structural and elastic properties of InN nanowires (NWs) have been investigated. It was observed that the NWs bend spontaneously or upon meeting an obstacle in their growth path at angles that are multiples of 30 . Lithographically patterned trenches and barriers were found to influence the growth direction of the NWs, which depending on the angle of incidence, grew along the barrier or got deflected from it. Young's modulus of InN NWs, measured by three point bending method using a NW suspended across a trench, was found to be 266 GPa, which is in between the moduli of bulk and thin film InN. Overall, the InN NW properties were found to be very suitable for applications in nanoelectromechanical systems (NEMS) and sensors. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Formation of InN phase by sequential ion implantation

International Nuclear Information System (INIS)

Santhana Raman, P.; Ravichandran, V.; Nair, K.G.M.; Kesavamoorthy, R.; Kalavathi, S.; Panigrahi, B.K.; Dhara, S.

2006-01-01

Formation of InN phase by sequentially implanting nitrogen on indium implanted silica was demonstrated. The growth of embedded InN phase on as-implanted and post-implantation annealed sample was studied using Glancing Incidence X-Ray Diffraction (GIXRD) and Raman spectroscopy. Existence of both cubic and hexagonal phases of InN was observed. Results of irradiation induced ripening of In nanoclusters due to N + ion implantation was also studied. (author)

Improved theoretical model of InN optical properties

International Nuclear Information System (INIS)

Ferreira da Silva, A.; Chubaci, J.F.D.; Matsuoka, M.; Freitas, J.A. Jr.; Tischler, J.G.; Baldissera, G.; Persson, C.

2014-01-01

The optical properties of InN are investigated theoretically by employing the projector augmented wave (PAW) method within Green's function and the screened Coulomb interaction approximation (GW o ). The calculated results are compared to previously reported calculations which use local density approximation combined with the scissors-operator approximation. The results of the present calculation are compared with reported values of the InN bandgap and with low temperature near infrared luminescence measurements of InN films deposited by a modified Ion Beam Assisted Deposition technique. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Direct current magnetron sputtering deposition of InN thin films

International Nuclear Information System (INIS)

Cai Xingmin; Hao Yanqing; Zhang Dongping; Fan Ping

2009-01-01

In this paper, InN thin films were deposited on Si (1 0 0) and K9 glass by reactive direct current magnetron sputtering. The target was In metal with the purity of 99.999% and the gases were Ar (99.999%) and N 2 (99.999%). The properties of InN thin films were studied. Scanning electron microscopy (SEM) shows that the film surface is very rough and energy dispersive X-ray spectroscopy (EDX) shows that the film contains In, N and very little O. X-ray diffraction (XRD) and Raman scattering reveal that the film mainly contains hexagonal InN. The four-probe measurement shows that InN film is conductive. The transmission measurement demonstrates that the transmission of InN deposited on K9 glass is as low as 0.5% from 400 nm to 800 nm.

Growth of InN films on spinel substrates by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Mitamura, K. [Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Megruro-ku, Tokyo 153-8505 (Japan); Ohta, J.; Fujioka, H. [Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Megruro-ku, Tokyo 153-8505 (Japan); Kanagawa Academy of Science and Technology (KAST), 3-2-1 Sakado, Takatsu-ku, Kanagawa 213-0012 (Japan); Oshima, M. [Department of Applied Chemistry, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

2007-10-15

We have grown InN films on MgAl{sub 2}O{sub 4}(111) substrates with atomically flat surfaces using pulsed laser deposition (PLD) and compared their structural properties with those grown on (Mn,Zn)Fe{sub 2}O{sub 4}(111) substrates. It has been revealed that InN(0001) films grow on MgAl{sub 2}O{sub 4}(111) with an in-plane epitaxial relationship of InN[1 anti 100]//MgAl{sub 2}O{sub 4}[1 anti 10], achieving a lattice mismatch minimum. The InN films exhibited a clear sixfold rotational symmetry, without 30 rotational domains and with a full width at half maximum value of the InN 0002 rocking curve being 17.5 arcmin. Comparison between InN films grown on MgAl{sub 2}O{sub 4} and those on (Mn,Zn)Fe{sub 2}O{sub 4} led us to conclude that suppression of the interfacial reactions between the InN films and the substrate is inherently important to obtain high quality InN on substrates with a spinel structure. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

SIMS and Raman studies of Mg-doped InN

International Nuclear Information System (INIS)

Davydov, V.Yu.; Kitaev, Yu.E.; Smirnov, A.N.; Lundina, E.Y.; Klochikhin, A.A.; Smirnov, M.B.; Lu, Hai; Schaff, William J.; Lee, H.M.; Lin, H.W.; Hong, Y.L.; Gwo, S.

2008-01-01

Raman and SIMS studies of Mg-doped InN films with a Mg content from N Mg =3.3 x 10 19 to 5.5 x 10 21 cm -3 are reported. Lattice dynamics of hexagonal InN with substitutional impurities and vacancies has been investigated theoretically and calculated Raman spectra were compared with experimental ones. It is concluded that Raman spectroscopy is a good tool for quantitative characterization of Mg-doped InN. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

InN: Fermi level stabilization by low-energy ion bombardment

International Nuclear Information System (INIS)

Piper, L.F.J.; Veal, T.D.; McConville, C.F.; Lu, H.; Schaff, W.J.

2006-01-01

The near-surface electronic properties of InN have been investigated with high-resolution electron-energy loss spectroscopy. Low-energy (∝400 eV) nitrogen ion bombardment followed by low temperature annealing (<300 C) was found to dramatically increase the n-type conductivity of InN, close to the surface. This is explained in terms of the formation of amphoteric defects from the ion bombardment and annealing combined with the band structure of InN. Low-energy ion bombardment and annealing is shown to result in a damage-induced, donor-like defect-profile instead of the expected electron accumulation for InN. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Infrared reflectance measurement for InN thin film characterization

International Nuclear Information System (INIS)

Fukui, K.; Kugumiya, Y.; Nakagawa, N.; Yamamoto, A.

2006-01-01

Infrared reflectance measurements of a series of InN thin films have been performed and attempt to derive carrier concentration and other physical constants for InN thin film characterization. Fitting calculations are performed by use of the dielectric function equation based on phonon-plasmon coupling model. Longitudinal and transverse optical phonon frequencies, plasma frequency and their damping parameters can be derived from fitting. From those results, electrical and phonon properties of InN and characterization of films are discussed. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Assessing the potential impact of non-proprietary drug copies on quality of medicine and treatment in patients with relapsing multiple sclerosis: the experience with fingolimod

Directory of Open Access Journals (Sweden)

Correale J

2014-06-01

Full Text Available Jorge Correale,1 Erwin Chiquete,2 Snezana Milojevic,3 Nadina Frider,3 Imre Bajusz31Raúl Carrea Institute for Neurological Research, Foundation for the Fight against Infant Neurological Illnesses, Buenos Aires, Argentina; 2Department of Neurology and Psychiatry, Salvador Zubirán National Institute of Medical Science and Nutrition, Mexico City, Mexico; 3Novartis Pharma AG, Basel, SwitzerlandBackground: Fingolimod is a once-daily oral treatment for relapsing multiple sclerosis, the proprietary production processes of which are tightly controlled, owing to its susceptibility to contamination by impurities, including genotoxic impurities. Many markets produce nonproprietary medicines; assessing their efficacy and safety is difficult as regulators may approve nonproprietary drugs without bioequivalence data, genotoxic evaluation, or risk management plans (RMPs. This assessment is especially important for fingolimod given its solubility/bioavailability profile, genotoxicity risk, and low-dose final product (0.5 mg. This paper presents an evaluation of the quality of proprietary and nonproprietary fingolimod variants.Methods: Proprietary fingolimod was used as a reference substance against which eleven nonproprietary fingolimod copies were assessed. The microparticle size distribution of each compound was assessed by laser light diffraction, and inorganic impurity content by sulfated ash testing. Heavy metals content was quantified using inductively coupled plasma optical emission spectrometry, and levels of unspecified impurities by high-performance liquid chromatography. Solubility was assessed in a range of solvents at different pH values. Key information from the fingolimod RMP is also presented.Results: Nonproprietary fingolimod variants exhibited properties out of proprietary or internationally accepted specifications, including differences in particle size distribution and levels of impurities such as heavy metals. For microparticle size and

InN Quantum Dot Based Infra-Red Photodetectors.

Science.gov (United States)

Shetty, Arjun; Kumar, Mahesh; Roull, Basanta; Vinoy, K J; Krupanidhj, S B

2016-01-01

Self-assembled InN quantum dots (QDs) were grown on Si(111) substrate using plasma assisted molecular beam epitaxy (PA-MBE). Single-crystalline wurtzite structure of InN QDs was confirmed by X-ray diffraction. The dot densities were varied by varying the indium flux. Variation of dot density was confirmed by FESEM images. Interdigitated electrodes were fabricated using standard lithog- raphy steps to form metal-semiconductor-metal (MSM) photodetector devices. The devices show strong infrared response. It was found that the samples with higher density of InN QDs showed lower dark current and higher photo current. An explanation was provided for the observations and the experimental results were validated using Silvaco Atlas device simulator.

Anomalous phase transition of InN nanowires under high pressure

International Nuclear Information System (INIS)

Tang Shun-Xi; Zhu Hong-Yang; Jiang Jun-Ru; Wu Xiao-Xin; Dong Yun-Xuan; Zhang Jian; Cui Qi-Liang; Yang Da-Peng

2015-01-01

Uniform InN nanowires were studied under pressures up to 35.5 GPa by using in situ synchrotron radiation x-ray diffraction technique at room temperature. An anomalous phase transition behavior has been discovered. Contrary to the results in the literature, which indicated that InN undergoes a fully reversible phase transition from the wurtzite structure to the rocksalt type structure, the InN nanowires in this study unusually showed a partially irreversible phase transition. The released sample contained the metastable rocksalt phase as well as the starting wurtzite one. The experimental findings of this study also reveal the potentiality of high pressure techniques to synthesize InN nanomaterials with the metastable rocksalt type structure, in addition to the generally obtained zincblende type one. (paper)

Evaluation of threading dislocation densities in In- and N-face InN

International Nuclear Information System (INIS)

Gallinat, C. S.; Koblmueller, G.; Wu, Feng; Speck, J. S.

2010-01-01

The threading dislocation (TD) structure and density has been studied in In- and N-face InN films grown on GaN by plasma-assisted molecular beam epitaxy. The TD densities were determined by nondestructive x-ray diffraction rocking curve measurements in on-axis symmetric and off-axis skew symmetric geometries and calibrated by transmission electron microscopy measurements. TD densities were dominated by edge-type TDs with screw-component TDs accounting for less than 10% of the total TD density. A significant decrease in edge-type TD density was observed for In-face InN films grown at increasingly higher substrate temperatures. In-face InN films grown with excess In exhibited lower TD densities compared to films grown under N-rich conditions. The edge-type TD density of N-face InN films was independent of substrate temperature due to the higher allowable growth temperatures for N-face InN compared to In-face InN. TD densities in In-face InN also showed a strong dependence on film thickness. Films grown at a thickness of less than 1 μm had higher TD densities compared with films grown thicker than 1 μm. The lowest measured TD density for an In-face InN film was ∼1.5x10 10 /cm 2 for 1 μm thick films.

Effects of film polarities on InN growth by molecular-beam epitaxy

International Nuclear Information System (INIS)

Xu, K.; Yoshikawa, A.

2003-01-01

Effects of the film polarity on InN growth were investigated in molecular-beam epitaxy (MBE). It was found that N-polarity InN could be grown at higher temperatures than In-polarity one. For the In-polarity films, which were grown on Ga-polar GaN template, the highest growth temperature was limited below 500 deg. C, and the surface morphology and crystal quality tended to be poor mainly because of the tolerated low growth temperature. While for the N-polarity InN films, which were grown on MBE-grown N-polar GaN, the growth temperature could be as high as 600 deg. C. The step-flow-like growth morphology was achieved for the InN films grown with N polarity at 580 deg. C. The resulting full widths of half maximum of x-ray rocking curve around InN (002) and (102) reflections were about 200-250 and 950-1100 arc sec, respectively. The photoluminescence of the InN films peaked at 0.697 eV. The recording Hall mobility of InN film grown in N polarity is 1400 cm 2 /V s with a background carrier concentration of 1.56x10 18 cm -3 at room temperature. For both-polarity films, we found N-rich condition was necessary for the stable InN growth

Generation of InN nanocrystals in organic solution through laser ablation of high pressure chemical vapor deposition-grown InN thin film

International Nuclear Information System (INIS)

Alkis, Sabri; Alevli, Mustafa; Burzhuev, Salamat; Vural, Hüseyin Avni; Okyay, Ali Kemal; Ortaç, Bülend

2012-01-01

We report the synthesis of colloidal InN nanocrystals (InN-NCs) in organic solution through nanosecond pulsed laser ablation of high pressure chemical vapor deposition-grown InN thin film on GaN/sapphire template substrate. The size, the structural, the optical, and the chemical characteristics of InN-NCs demonstrate that the colloidal InN crystalline nanostructures in ethanol are synthesized with spherical shape within 5.9–25.3, 5.45–34.8, 3.24–36 nm particle-size distributions, increasing the pulse energy value. The colloidal InN-NCs solutions present strong absorption edge tailoring from NIR region to UV region.

Convergence of valence bands for high thermoelectric performance for p-type InN

International Nuclear Information System (INIS)

Li, Hai-Zhu; Li, Ruo-Ping; Liu, Jun-Hui; Huang, Ming-Ju

2015-01-01

Band engineering to converge the bands to achieve high valley degeneracy is one of effective approaches for designing ideal thermoelectric materials. Convergence of many valleys in the valence band may lead to a high Seebeck coefficient, and induce promising thermoelectric performance of p-type InN. In the current work, we have systematically investigated the electronic structure and thermoelectric performance of wurtzite InN by using the density functional theory combined with semiclassical Boltzmann transport theory. Form the results, it can be found that intrinsic InN has a large Seebeck coefficient (254 μV/K) and the largest value of Z e T is 0.77. The transport properties of p-type InN are better than that of n-type one at the optimum carrier concentration, which mainly due to the large Seebeck coefficient for p-type InN, although the electrical conductivity of n-type InN is larger than that of p-type one. We found that the larger Seebeck coefficient for p-type InN may originate from the large valley degeneracy in the valence band. Moreover, the low minimum lattice thermal conductivity for InN is one key factor to become a good thermoelectric material. Therefore, p-type InN could be a potential material for further applications in the thermoelectric area.

Two-dimensional electron gas in monolayer InN quantum wells

International Nuclear Information System (INIS)

Pan, W.; Wang, G. T.; Dimakis, E.; Moustakas, T. D.; Tsui, D. C.

2014-01-01

We report in this letter experimental results that confirm the two-dimensional nature of the electron systems in a superlattice structure of 40 InN quantum wells consisting of one monolayer of InN embedded between 10 nm GaN barriers. The electron density and mobility of the two-dimensional electron system (2DES) in these InN quantum wells are 5 × 10 15  cm −2 (or 1.25 × 10 14  cm −2 per InN quantum well, assuming all the quantum wells are connected by diffused indium contacts) and 420 cm 2 /Vs, respectively. Moreover, the diagonal resistance of the 2DES shows virtually no temperature dependence in a wide temperature range, indicating the topological nature of the 2DES

Anomalous magnetism of superconducting Mg-doped InN film

Directory of Open Access Journals (Sweden)

P. H. Chang

2016-02-01

Full Text Available We report on the Meissner effect of Mg-doped InN film with superconducting transition onset temperature Tc,onset of 5 K. Mg-doped InN is magnetically ordered and exhibits a simultaneous first-order magnetic and electric transition near 50 K. Its behavior is similar to that of iron-based superconductors. A strong correlation is proposed to exist between structural distortion and superconductivity when Mg is doped into InN. The suppression of magnetic ordering close to Tc by doping is further demonstrated by anisotropic magnetoresistance and M-H measurements. The findings suggest that the superconducting mechanism in the system may not be conventional BCS.

Influence of Different Interlayers on Growth Mode and Properties of InN by MOVPE

International Nuclear Information System (INIS)

Ri-Qing, Zhang; Xiang-Lin, Liu; Ting-Ting, Kang; Wei-Guo, Hu; Shao-Yan, Yang; Chun-Mei, Jiao; Qing-Sheng, Zhu

2008-01-01

We grow InN epilayers on different interlayers by metal organic vapour phase epitaxy (MOVPE) method, and investigate the effect of interlayer on the properties and growth mode of InN films. Three InN samples were deposited on nitrided sapphire, low-temperature InN (LT-InN) and high-temperature GaN (HT-GaN), respectively. The InN layer grown directly on nitrided sapphire owns the narrowest x-ray diffraction rocking curve (XRC) width of 300 arcsec among the three samples, and demonstrates a two-dimensional (2D) step-flow-like lateral growth mode, which is much different from the three-dimensional (3D) pillar-like growth mode of LT-InN and HT-GaN buffered samples. It seems that mismatch tensile strain is helpful for the lateral epitaxy of InN film, whereas compressive strain promotes the vertical growth of InN films

Molecular beam epitaxy of InN nanowires on Si

Science.gov (United States)

Golam Sarwar, A. T. M.; Carnevale, Santino D.; Kent, Thomas F.; Laskar, Masihhur R.; May, Brelon J.; Myers, Roberto C.

2015-10-01

We report on a systematic growth study of the nucleation process of InN nanowires on Si(1 1 1) substrates using plasma assisted molecular beam epitaxy (PAMBE). Samples are grown with various substrate temperatures and III/V ratios. Scanning electron microscopy, X-ray diffraction spectroscopy, energy dispersive X-ray spectroscopy, and photoluminescence are carried out to map out the variation in structural and optical properties versus growth conditions. Statistical averages of areal density, height, and radius are mapped as a function of substrate temperature and III/V ratio. Three different morphological phases are identified on the growth surface: InN, α-In and β-In. Based on SEM image analysis of samples grown at different conditions, the formation mechanism of these phases is proposed. Finally, the growth phase diagram of PAMBE grown InN on Si under N-rich condition is presented, and tapered versus non-tapered growth conditions are identified. It is found that high growth temperature and low III/V ratio plays a critical role in the growth of non-tapered InN nanowires.

Growth of cubic InN on r-plane sapphire

International Nuclear Information System (INIS)

Cimalla, V.; Pezoldt, J.; Ecke, G.; Kosiba, R.; Ambacher, O.; Spiess, L.; Teichert, G.; Lu, H.; Schaff, W.J.

2003-01-01

InN has been grown directly on r-plane sapphire substrates by plasma-enhanced molecular-beam epitaxy. X-ray diffraction investigations have shown that the InN layers consist of a predominant zinc blende (cubic) structure along with a fraction of the wurtzite (hexagonal) phase which content increases with proceeding growth. The lattice constant for zinc blende InN was found to be a=4.986 A. For this unusual growth of a metastable cubic phase on a noncubic substrate an epitaxial relationship was proposed where the metastable zinc blende phase grows directly on the r-plane sapphire while the wurtzite phase arises as the special case of twinning in the cubic structure

InN{0001} polarity by ion scattering spectroscopy

International Nuclear Information System (INIS)

Walker, M.; Veal, T.D.; McConville, C.F.; Lu, Hai; Schaff, W.J.

2005-01-01

The polarity of a wurtzite InN thin film grown on a c-plane sapphire substrate with GaN and AlN buffer layers has been investigated by co-axial impact collision ion scattering spectroscopy (CAICISS). Time of flight (TOF) spectra of He + ions scattered from the surface of the InN film were taken as a function of the incident angles of the primary 3 keV He + ions. From the TOF spectra, the polar angle-dependence of the In scattered intensity was obtained. Comparison of the experimental polar-angle dependence of the In CAICISS signal intensity with simulated results for the various volume ratios of (0001)- and (000 anti 1)-polarity domains indicated that the InN film is approximately 75% In-polarity and 25% N-polarity. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Analysis of the local structure of InN with a bandgap energy of 0.8 and 1.9 eV and annealed InN using X-ray absorption fine structure measurements

International Nuclear Information System (INIS)

Miyajima, Takao; Kudo, Yoshihiro; Wakahara, Akihiro; Yamaguchi, Tomohiro; Araki, Tsutomu; Nanishi, Yasushi

2006-01-01

We compared the local structure around In atoms in microwave-excited MOCVD- and MBE-grown InN film which indicates an absorption edge at 1.9 and 0.8 eV, respectively. The co-ordination numbers of the 1st-nearest neighbor N atoms and the 2nd-nearest neighbor In atoms for MBE-grown InN were n(N)=3.9±0.5 and n(In)=12.4±0.9, which are close to the ideal value of n(N)=4 and n(In)=12 for InN without defects, respectively. By thermal annealing, the structure of MBE-grown InN was changed from InN to In 2 O 3 , and the absorption edge was changed from 0.8 to 3.5 eV. However, the microwave-excited MOCVD-grown InN had no structure of In 2 O 3 , and had the reduced co-ordination numbers of the 2nd-nearest neighbor In atoms of n(In)=10.6-11.7. From these results, we conclude that the origin of the 1.9-eV absorption edge of InN is the imperfections (defects) of the In lattice sites of InN, rather than the generation of In 2 O 3 , which has a bandgap energy of 3.5 eV. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Transport and mobility properties of wurtzite InN and GaN

International Nuclear Information System (INIS)

Yarar, Zeki

2007-01-01

The results of an ensemble Monte Carlo model of the electron transport in wurtzite gallium nitride (GaN) and indium nitride (InN) are presented. There is a controversy over the material parameters of InN, therefore the recently reported and the traditionally accepted parameter values for InN are used in simulations and the results are compared. The steady-state and transient electron transport characteristics are analyzed and the valley populations of electrons are determined as a function of electric field. The low-field mobility of electrons is also obtained as a function of temperature and over a wide range of carrier concentrations. It is seen that with the recently published material parameters the peak velocity of carriers in InN increases significantly, while the field at which it is attained decreases. The calculated maximum low field mobility at 300 K in InN with the recent material parameters is about 10000 cm 2 /V s for low carrier concentrations. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Growth of M-plane (10-10)InN on LiAlO2(100) substrate

International Nuclear Information System (INIS)

Takagi, Yusuke; Muto, Daisuke; Araki, Tsutomu; Nanishi, Yasushi; Yamaguchi, Tomohiro

2009-01-01

In this study, we report the growth and characterization of M-plane InN films on LiAlO 2 (100) substrates by radio-frequency plasma assisted molecular beam epitaxy (RF-MBE). InN films were grown at various temperatures and under various V/III ratios on the substrates. Pure M -plane InN films were successfully grown at a high temperature of 450 C and under a slightly In-rich condition, while the incorporation of C-plane phase was observed in M -plane InN films grown at low temperatures of less than 400 C or under a N-rich condition. These indicate that controls of growth temperature and V/III ratio are important for the growth of pure M-plane InN films. The in-plane epitaxial relationships of M -plane InN on LiAlO 2 (100) were[0001] InN //[010] LiAlO 2 and[1-210] InN //[001] LiAlO 2 . A surface electron accumulation layer on the obtained M-plane InN film is also discussed. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Temperature dependence of InN film deposition by an RF plasma-assisted reactive ion beam sputtering deposition technique

International Nuclear Information System (INIS)

Shinoda, Hiroyuki; Mutsukura, Nobuki

2005-01-01

Indium nitride (InN) films were deposited on Si(100) substrates using a radiofrequency (RF) plasma-assisted reactive ion beam sputtering deposition technique at various substrate temperatures. The X-ray diffraction patterns of the InN films suggest that the InN films deposited at substrate temperatures up to 370 deg C were cubic crystalline InN; and at 500 deg C, the InN film was hexagonal crystalline InN. In a scanning electron microscope image of the InN film surface, facets of cubic single-crystalline InN grains were clearly observed on the InN film deposited at 370 deg C. The inclusion of metallic indium appeared on the InN film deposited at 500 deg C

Optical properties of InN nanocolumns: Electron accumulation at InN non-polar surfaces and dependence on the growth conditions

Energy Technology Data Exchange (ETDEWEB)

Segura-Ruiz, J.; Cantarero, A. [Materials Science Institute, University of Valencia (Spain); Garro, N. [Materials Science Institute, University of Valencia (Spain); Fundacio General de la Universitat de Valencia, Valencia (Spain); Iikawa, F. [Instituto de Fisica ' ' Gleb Wataghin' ' , UNICAMP, Campinas-SP (Brazil); Denker, C.; Malindretos, J.; Rizzi, A. [IV. Physikalisches Institut, Georg-August Universitaet Goettingen (Germany)

2009-06-15

InN nanocolumns grown by plasma-assisted molecular beam epitaxy have been studied by photoluminescence (PL) and photoluminescence excitation (PLE). The PL peak energy was red-shifted with respect to the PLE onset and both energies were higher than the low temperature band-gap reported for InN. PL and PLE experiments for different excitation and detection energies indicated that the PL peaks were homogeneously broadened. This overall phenomenology has been attributed to the effects of an electron accumulation layer present at the non-polar surfaces of the InN nanocolumns. Variations in the growth conditions modify the edge of the PLE spectra and the PL peak energies evidencing that the density of free electrons can be somehow controlled by the growth parameters. It was observed that In-BEP and substrate temperature leading to shorter In diffusion lengths diminished the effects of the electron accumulation layer on the optical properties. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Optical properties of InN nanocolumns: Electron accumulation at InN non-polar surfaces and dependence on the growth conditions

International Nuclear Information System (INIS)

Segura-Ruiz, J.; Cantarero, A.; Garro, N.; Iikawa, F.; Denker, C.; Malindretos, J.; Rizzi, A.

2009-01-01

InN nanocolumns grown by plasma-assisted molecular beam epitaxy have been studied by photoluminescence (PL) and photoluminescence excitation (PLE). The PL peak energy was red-shifted with respect to the PLE onset and both energies were higher than the low temperature band-gap reported for InN. PL and PLE experiments for different excitation and detection energies indicated that the PL peaks were homogeneously broadened. This overall phenomenology has been attributed to the effects of an electron accumulation layer present at the non-polar surfaces of the InN nanocolumns. Variations in the growth conditions modify the edge of the PLE spectra and the PL peak energies evidencing that the density of free electrons can be somehow controlled by the growth parameters. It was observed that In-BEP and substrate temperature leading to shorter In diffusion lengths diminished the effects of the electron accumulation layer on the optical properties. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

MBE-growth, characterization and properties of InN and InGaN

International Nuclear Information System (INIS)

Nanishi, Y.; Saito, Y.; Yamaguchi, T.; Hori, M.; Matsuda, F.; Araki, T.; Suzuki, A.; Miyajima, T.

2003-01-01

Recent developments on RF-MBE growth of InN and InGaN and their structural and property characterizations are reviewed. For successful growth of high quality InN, (1) nitridation of the sapphire substrates, (2) two-step growth, (3) precise control of V/III ratio and (4) selection of optimum growth temperature are found to be essential. Characterization using XRD, TEM, EXAFS and Raman scattering have clearly demonstrated that InN films have ideal hexagonal wurtzite structure. It is also found that the film has N-polarity. Studies on optimum growth condition dependence on substrate polarity using C and Si face SiC substrates and Ga and N face free-standing GaN substrates are also demonstrated. The result explains why high-quality InN grown by RF-MBE has N-polarity. PL and CL studies on these well-characterized high-quality InN have shown luminescence peaks at approximately 0.75 eV at 77 K. These values, however, change slightly depending on measurement temperatures and probably on the residual carrier concentrations. InGaN with full compositional range are also successfully grown on sapphire substrates and band gap energies of these alloys are also studied using PL and CL. Based on these results, true band gap energies of InN are discussed. This paper also includes latest study on single crystalline InN growth on Si (111) substrates. (copyright 2003 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

MBE-growth, characterization and properties of InN and InGaN

Energy Technology Data Exchange (ETDEWEB)

Nanishi, Y.; Saito, Y.; Yamaguchi, T.; Hori, M.; Matsuda, F.; Araki, T. [Dept. of Photonics, Ritsumeikan Univ., 1-1-1 Noji-higashi, Kusatsu (Japan); Suzuki, A. [Res. Org. of Sci. and Eng., Ritsumeikan Univ., 1-1-1 Noji-higashi, Kusatsu (Japan); Miyajima, T. [Sony Corp. Core Technology and Network Company, 4-14-1 Asahi, Atsugi, Kanagawa 243-0014 (Japan)

2003-11-01

Recent developments on RF-MBE growth of InN and InGaN and their structural and property characterizations are reviewed. For successful growth of high quality InN, (1) nitridation of the sapphire substrates, (2) two-step growth, (3) precise control of V/III ratio and (4) selection of optimum growth temperature are found to be essential. Characterization using XRD, TEM, EXAFS and Raman scattering have clearly demonstrated that InN films have ideal hexagonal wurtzite structure. It is also found that the film has N-polarity. Studies on optimum growth condition dependence on substrate polarity using C and Si face SiC substrates and Ga and N face free-standing GaN substrates are also demonstrated. The result explains why high-quality InN grown by RF-MBE has N-polarity. PL and CL studies on these well-characterized high-quality InN have shown luminescence peaks at approximately 0.75 eV at 77 K. These values, however, change slightly depending on measurement temperatures and probably on the residual carrier concentrations. InGaN with full compositional range are also successfully grown on sapphire substrates and band gap energies of these alloys are also studied using PL and CL. Based on these results, true band gap energies of InN are discussed. This paper also includes latest study on single crystalline InN growth on Si (111) substrates. (copyright 2003 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Structure and electronic properties of InN and In-rich group III-nitride alloys

International Nuclear Information System (INIS)

Walukiewicz, W; III, J W Ager; Yu, K M; Liliental-Weber, Z; Wu, J; Li, S X; Jones, R E; Denlinger, J D

2006-01-01

The experimental study of InN and In-rich InGaN by a number of structural, optical and electrical methods is reviewed. Recent advances in thin film growth have produced single crystal epitaxial layers of InN which are similar in structural quality to GaN films made under similar conditions and which can have electron concentrations below 1 x 10 18 cm -3 and mobilities exceeding 2000 cm 2 (Vs) -1 . Optical absorption, photoluminescence, photo-modulated reflectance and soft x-ray spectroscopy measurements were used to establish that the room temperature band gap of InN is 0.67 ± 0.05 eV. Experimental measurements of the electron effective mass in InN are presented and interpreted in terms of a non-parabolic conduction band caused by the k · p interaction across the narrow gap. Energetic particle irradiation is shown to be an effective method to control the electron concentration, n, in undoped InN. Optical studies of irradiated InN reveal a large Burstein-Moss shift of the absorption edge with increasing n. Fundamental studies of the energy levels of defects in InN and of electron transport are also reviewed. Finally, the current experimental evidence for p-type activity in Mg-doped InN is evaluated. (topical review)

InN grown by migration enhanced afterglow (MEAglow)

International Nuclear Information System (INIS)

Butcher, Kenneth Scott A.; Alexandrov, Dimiter; Terziyska, Penka; Georgiev, Vasil; Georgieva, Dimka; Binsted, Peter W.

2012-01-01

InN thin films were grown by a new technique, migration enhanced afterglow (MEAglow), a chemical vapour deposition (CVD) form of migration enhanced epitaxy (MEE). Here we describe the apparatus used for this form of film deposition, which includes a scalable hollow cathode nitrogen plasma source. Initial film growth results for InN are also presented including atomic force microscopy (AFM) images that indicate step flow growth with samples having root mean square (RMS) surface roughness of as little as 0.103 nm in some circumstances for film growth on sapphire substrates. X-ray diffraction (XRD) results are also provided for samples with a full width half maximum (FWHM) of the (0002) ω-2θ peak of as little as 290 arcsec. Low pressure conditions that can result in damage to the InN during growth are described. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Analysis of the local structure of InN with a bandgap energy of 0.8 and 1.9 eV and annealed InN using X-ray absorption fine structure measurements

Energy Technology Data Exchange (ETDEWEB)

Miyajima, Takao [Materials Laboratories, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014 (Japan); Kudo, Yoshihiro [Materials Analysis Lab., Sony Corporation, 4-18-1 Okada, Atsugi, Kanagawa 243-0021 (Japan); Wakahara, Akihiro [Deptm. of Electrical and Electronic Engineering, Toyohashi Univ. of Tech., Toyohashi 441-8580 (Japan); Yamaguchi, Tomohiro; Araki, Tsutomu; Nanishi, Yasushi [Deptm. of Photonics, Ritsumeikan Univ., 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577 (Japan)

2006-06-15

We compared the local structure around In atoms in microwave-excited MOCVD- and MBE-grown InN film which indicates an absorption edge at 1.9 and 0.8 eV, respectively. The co-ordination numbers of the 1st-nearest neighbor N atoms and the 2nd-nearest neighbor In atoms for MBE-grown InN were n(N)=3.9{+-}0.5 and n(In)=12.4{+-}0.9, which are close to the ideal value of n(N)=4 and n(In)=12 for InN without defects, respectively. By thermal annealing, the structure of MBE-grown InN was changed from InN to In{sub 2}O{sub 3}, and the absorption edge was changed from 0.8 to 3.5 eV. However, the microwave-excited MOCVD-grown InN had no structure of In{sub 2}O{sub 3}, and had the reduced co-ordination numbers of the 2nd-nearest neighbor In atoms of n(In)=10.6-11.7. From these results, we conclude that the origin of the 1.9-eV absorption edge of InN is the imperfections (defects) of the In lattice sites of InN, rather than the generation of In{sub 2}O{sub 3}, which has a bandgap energy of 3.5 eV. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

A Man with No Name, or Too Many Names if You Think About it

OpenAIRE

Singh, Danvir

2014-01-01

Danvir. Jimmy. Danny V. Danny V & the Bumblebees. Danny Valentine. Double D. Deezus. D Weezy. DJ Takeover. Or ahh forget it. From lowly beginnings as a Window cleaner in Tin Pan Alley-era New York City singing "hello hello Tokio" to an "inn-keeper" in the countryside waxing rhapsodically about his famous battles while those around him push his buttons, this man with numerous names has had the opportunity to experience multiple worlds and the challenges that each of these bring up for the acto...

Cable-to-post attachments for use in non-proprietary high-tension cable median barrier - phase II.

Science.gov (United States)

2016-03-24

The objective of this study was to reevaluate and improve the existing cable-to-post attachment hardware that is utilized : in the non-proprietary cable barrier being developed at MwRSF. The study focused on redesigning the bolted, tabbed : bracket (...

MOVPE of InN films on GaN templates grown on sapphire and silicon(111) substrates

International Nuclear Information System (INIS)

Jamil, Muhammad; Arif, Ronald A.; Ee, Yik-Khoon; Tong, Hua; Tansu, Nelson; Higgins, John B.

2008-01-01

This paper reports the study of MOVPE of InN on GaN templates grown on sapphire and silicon(111) substrates. Thermodynamic analysis of MOVPE of InN performed using NH 3 as nitrogen source and the experimental findings support the droplet-free epitaxial growth of InN under high V/III ratios of input precursors. At a growth pressure of 500 Torr, the optimum growth temperature and V/III ratio of the InN film are 575-650 C and >3 x 10 5 , respectively. The surface RMS roughness of InN film grown GaN/sapphire template is ∝0.3 nm on 2 μm x 2 μm area, while the RMS roughness of the InN film grown on GaN/Si(111) templates is found as ∝0.7 nm. The X-ray diffraction (XRD) measurement reveals the (0002) texture of the InN film on GaN/sapphire template with a FWHM of 281 arcsec of the InN(0002) ω rocking curve. For the film grown on GaN/Si template under identical growth conditions, the XRD measurements show the presence of metallic In, in addition to the (0002) orientation of InN layer. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Polarity and microstructure in InN thin layers grown by MOVPE

International Nuclear Information System (INIS)

Kuwano, N.; Nakahara, Y.; Amano, H.

2006-01-01

Microstructures in InN grown on sapphire (0001) and yttria-stabilized zirconia (YSZ) (111) by metal-organic vapor phase epitaxy (MOVPE) were analyzed by means of transmission electron microscopy (TEM) in order to clarify the growth process. Special attention was paid to the selectivity of the crystal polarity of InN. The InN thin films grown on sapphire after nitridation has a flat surface while those grown on YSZ has hillocks on the surface. The crystal polarity was determined by comparing the experimentally observed intensity distribution in convergent beam electron diffraction (CBED) disks with those simulated by the Broch-wave method. It was found that the InN grown on the sapphire has a nitrogen-polarity and the one on YSZ has a mixture of In- and N-polarities. The effect of surface-nitridation of sapphire on the growth process is also discussed (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Electron transport in wurtzite InN

Indian Academy of Sciences (India)

InN transport; mobility; energy and momentum relaxation; impurity scattering. ... future generation solar cell because the nitride alloys can cover the whole ... We apply the ensemble Monte Carlo method to investigate the electron transport in.

Catalyst-free growth of InN nanorods by metal-organic chemical vapor deposition

International Nuclear Information System (INIS)

Kim, Min Hwa; Moon, Dae Young; Park, Jinsub; Nanishi, Yasushi; Yi, Gyu-Chul; Yoon, Euijoon

2012-01-01

We demonstrated the growth of catalyst-free InN nanostructures including nanorods on (0001) Al 2 O 3 substrates using metal-organic chemical vapor deposition. As the growth time increased, growth rate along c-direction increased superlinearly with decreasing c-plane area fractions and increasing side wall areas. It was also found that desorption from the sidewalls of InN nanostructures during the InN nanorods formation was one of essential key parameters of the growth mechanism. We propose a growth model to explain the InN nanostructure evolution by considering the side wall desorption and re-deposition of indium at top c-plane surfaces. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Unusual photoluminescence properties of vertically aligned InN nanorods grown by plasma-assisted molecular-beam epitaxy

International Nuclear Information System (INIS)

Shen, C.H.; Chen, H.Y.; Lin, H.W.; Wu, C.Y.; Gwo, S.; Klochikhin, A.A.; Davydov, V.Yu.

2007-01-01

We report the unusual photoluminescence (PL) properties of vertically aligned InN nanorod arrays grown on Si(111) with a Si 3 N 4 buffer layer. The optimum growth conditions of InN nanorods are obtained by controlling the III/V ratio and the growth temperature. Structural characterization by X-ray diffraction and scanning electron microscopy indicates that individual nanorods are wurtzite InN single crystals with the growth direction along the c-axis. Near-infrared PL from InN nanorods is clearly observed at room temperature. However, in comparison to the PL from InN epitaxial films, the PL from InN nanorods is significantly lower in efficiency and exhibit anomalous temperature dependence. We propose that these unusual PL properties are results of considerable structural disorder (especially for the low-temperature grown InN nanorods) and strong surface electron accumulation effect. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Effects of Cp2Mg supply on MOVPE growth behavior of InN

International Nuclear Information System (INIS)

Sugita, K.; Sasamoto, K.; Hashimoto, A.; Yamamoto, A.

2011-01-01

This report shows the effect of Cp 2 Mg supply on MOVPE growth behavior of InN. At low growth temperature (∝600 C), the formation of adducts occurred, which degenerates the crystal quality. With increasing the growth temperature, the adduct formation was suppressed because the decomposition of Cp 2 Mg was enhanced and thus the incorporation of carbon into the film was suppressed. The use of Cp 2 Mg during InN growth increases the growth rate in the lateral direction. Non-doped InN film grown on GaN buffer has an In-face of the top side. On the other hand, the inversion domains seems to be formed in the highly Mg-doped InN. Tilt distribution decreases from 65 to 30 arcmin with the increase of Cp 2 Mg/TMI molar ratio 0 to 0.06. The donor is produced in highly Mg-doped MOVPE-grown InN (Cp 2 Mg/TMI molar ratio > 0.005). Therefore, the effect of Cp 2 Mg supply on MOVPE growth behavior of InN is found to improve a macro-scale crystal quality but also produces the donor (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Investigations on the structural and optical properties of sphere-shaped indium nitride (InN)

Energy Technology Data Exchange (ETDEWEB)

Bagavath, C.; Kumar, J. [Anna University, Crystal Growth Centre, Chennai, Tamil Nadu (India); Nasi, L. [IMEM-CNR, Parma (Italy)

2017-04-15

Indium nitride (InN) sphere-shaped micro crystals and nano crystals were made using sol-gel method. The crystalline size of the samples were calculated using X-ray diffraction, which were found to increase with the increase of nitridation temperature and time. High resolution-transmission electron microscopy images exhibited the distinct sphere shape of InN with different size of micro and nanometers. The calculated band gap of InN spheres using photo luminescence and UV-visible absorption spectra, was found to be 1.2 eV. Optical phonon modes of InN were determined from micro-Raman studies. (orig.)

Double resonance Raman effects in InN nanowires

Energy Technology Data Exchange (ETDEWEB)

Domenech-Amador, N.; Cusco, R.; Artus, L. [Institut Jaume Almera, Consell Superior d' Investigacions Cientifiques (CSIC), Lluis Sole i Sabaris s.n., Barcelona, Catalonia (Spain); Calarco, R. [Institute of Bio- and Nanosystems, Research Center Juelich GmbH, Juelich (Germany); Paul-Drude-Institut fuer Festkoerperelektronik, Berlin (Germany); Yamaguchi, T.; Nanishi, Y. [Faculty of Science and Engineering, Ritsumeikan University, Noji-Higashi, Kusatsu, Shiga 525-8577 (Japan)

2012-04-15

We study the excitation wavelength dependence of the Raman spectra of InN nanowires. The E{sub 1}(LO) phonon mode, which is detected in backscattering configuration because of light entering through lateral faces, exhibits an upward frequency shift that can be explained by Martin's double resonance. The E{sub 1} (LO)/E{sub 2}{sup h} intensity ratio increases with the excitation wavelength more rapidly than the A{sub 1}(LO)/E{sub 2}{sup h} ratio measured in InN thin films. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Growth modes of InN (000-1) on GaN buffer layers on sapphire

International Nuclear Information System (INIS)

Liu Bing; Kitajima, Takeshi; Chen Dongxue; Leone, Stephen R.

2005-01-01

In this work, using atomic force microscopy and scanning tunneling microscopy, we study the surface morphologies of epitaxial InN films grown by plasma-assisted molecular beam epitaxy with intervening GaN buffer layers on sapphire substrates. On smooth GaN buffer layers, nucleation and evolution of three-dimensional InN islands at various coverages and growth temperatures are investigated. The shapes of the InN islands are observed to be predominantly mesalike with large flat (000-1) tops, which suggests a possible role of indium as a surfactant. Rough GaN buffer layers composed of dense small GaN islands are found to significantly improve uniform InN wetting of the substrates, on which atomically smooth InN films are obtained that show the characteristics of step-flow growth. Scanning tunneling microscopy imaging reveals the defect-mediated surface morphology of smooth InN films, including surface terminations of screw dislocations and a high density of shallow surface pits with depths less than 0.3 nm. The mechanisms of the three-dimensional island size and shape evolution and formation of defects on smooth surfaces are considered

Crystallographic deterioration of MOVPE InN during the growth

International Nuclear Information System (INIS)

Sugita, K.; Nagai, Y.; Houchin, Y.; Hashimoto, A.; Yamamoto, A.

2007-01-01

This paper reports the crystallographic degradation of MOVPE InN during the growth. Using FWHMs of X-ray rocking curve, tilt ((0002)) and twist ((10-10)) angle distributions are evaluated and effects of the major growth parameters, such as growth temperature, growth time and with/without GaN buffer in the degradation, are revealed. With increasing either thickness of grown InN or growth temperature up to 600 C, the tilt angle distribution is markedly increased, indicating the crystallographic degradation of grown films. The use of a GaN buffer reduces such degradation. Since the twist angle distribution is scarcely changed by such growth parameters, the destruction of InN crystals during growth and annealing is concluded to be anisotropic. The trends of the crystallographic degradation revealed here are in good agreement with those for the electrical and optical degradation previously reported. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Spectral dependence of third-order nonlinear optical properties in InN

International Nuclear Information System (INIS)

Ahn, H.; Lee, M.-T.; Chang, Y.-M.

2014-01-01

We report on the nonlinear optical properties of InN measured in a wide near-infrared spectral range with the femtosecond Z-scan technique. The above-bandgap nonlinear absorption in InN is found to originate from the saturation of absorption by the band-state-filling and its cross-section increases drastically near the bandgap energy. With below-bandgap excitation, the nonlinear absorption undergoes a transition from saturation absorption (SA) to reverse-SA (RSA), attributed to the competition between SA of band-tail states and two-photon-related RSA. The measured large nonlinear refractive index of the order of 10 −10 cm 2 /W indicates InN as a potential material for all-optical switching and related applications

Inhomogeneous free-electron distribution in InN nanowires: Photoluminescence excitation experiments

Science.gov (United States)

Segura-Ruiz, J.; Molina-Sánchez, A.; Garro, N.; García-Cristóbal, A.; Cantarero, A.; Iikawa, F.; Denker, C.; Malindretos, J.; Rizzi, A.

2010-09-01

Photoluminescence excitation (PLE) spectra have been measured for a set of self-assembled InN nanowires (NWs) and a high-crystalline quality InN layer grown by molecular-beam epitaxy. The PLE experimental lineshapes have been reproduced by a self-consistent calculation of the absorption in a cylindrical InN NW. The differences in the PLE spectra can be accounted for the inhomogeneous electron distribution within the NWs caused by a bulk donor concentration (ND+) and a two-dimensional density of ionized surface states (Nss+) . For NW radii larger than 30 nm, ND+ and Nss+ modify the absorption edge and the lineshape, respectively, and can be determined from the comparison with the experimental data.

LDA+U and tight-binding electronic structure of InN nanowires

Science.gov (United States)

Molina-Sánchez, A.; García-Cristóbal, A.; Cantarero, A.; Terentjevs, A.; Cicero, G.

2010-10-01

In this paper we employ a combined ab initio and tight-binding approach to obtain the electronic and optical properties of hydrogenated Indium nitride (InN) nanowires. We first discuss InN band structure for the wurtzite structure calculated at the LDA+U level and use this information to extract the parameters needed for an empirical tight-binging implementation. These parameters are then employed to calculate the electronic and optical properties of InN nanowires in a diameter range that would not be affordable by ab initio techniques. The reliability of the large nanowires results is assessed by explicitly comparing the electronic structure of a small diameter wire studied both at LDA+U and tight-binding level.

Nitridation effects of Si(1 1 1) substrate surface on InN nanorods grown by plasma-assisted molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Feng, Shan [Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074 (China); Tan, Jin, E-mail: jintan_cug@163.com [Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074 (China); Engineering Research Center of Nano-Geomaterials of Ministry of Education, China University of Geosciences, Wuhan 430074 (China); Li, Bin; Song, Hao; Wu, Zhengbo; Chen, Xin [Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074 (China)

2015-02-05

Graphical abstract: The morphology evolution of InN nanorods in samples (g)–(i). The alignment of InN nanorods is improved and the deviation angle distribution narrows down with increase in nitriding time. It suggests that extending the nitriding time can enhance the vertical orientation of InN nanorods. - Highlights: • InN nanorods were grown on surface nitrided Si(1 1 1) substrate using PAMBE system. • Nitridation of substrate surface has a strong effect on morphology of InN nanorods. • InN nanorods cannot be formed with 1 min nitridation of Si(1 1 1) substrate. • Increasing nitriding time will increase optimum growth temperature of InN nanorods. • Increasing nitriding time can enhance vertical orientation of InN nanorods. - Abstract: The InN nanorods were grown on Si(1 1 1) substrate by plasma-assisted molecular beam epitaxy (PAMBE) system, with a substrate nitridation process. The effect of nitriding time of Si(1 1 1) substrate on morphology, orientation and growth temperature of InN nanorods was characterized via scanning electron microscopy (SEM) and X-ray diffraction (XRD). The deviation angle of InN nanorods was measured to evaluate the alignment of arrays. The results showed that InN nanorods could not be formed with 1 min nitridation of Si(1 1 1) substrate, but they could be obtained again when the nitriding time was increased to more than 10 min. In order to get aligned InN nanorods, the growth temperature needed to increase with longer nitriding time. The vertical orientation of InN nanorods could be enhanced with increase in nitriding time. The influence of the substrate nitridation on the photoluminescence (PL) spectra of InN nanorods has been investigated.

Effect of indium accumulation on the characteristics of a-plane InN epi-films under different growth conditions

Energy Technology Data Exchange (ETDEWEB)

Lo, Yun-Yo [Institute of Photonics, National Changhua University of Education, Changhua, Taiwan, ROC (China); Huang, Man-Fang, E-mail: mfhuang@cc.ncue.edu.tw [Institute of Photonics, National Changhua University of Education, Changhua, Taiwan, ROC (China); Chiang, Yu-Chia [Institute of Photonics, National Changhua University of Education, Changhua, Taiwan, ROC (China); Fan, Jenn-Chyuan [Department of Electronic Engineering, Nan Kai University of Technology, Nantou, Taiwan, ROC (China)

2015-08-31

This study investigated the influence of indium accumulation happened on the surface of a-plane InN grown under different growth conditions. Three different growth rates with N/In ratio from stoichiometric to N-rich were used to grow a-plane InN epifilms on GaN-buffered r-plane sapphires by plasma-assisted molecular beam epitaxy. When a-plane InN was grown above 500 °C with a high growth rate, abnormally high in-situ reflectivity was found during a-plane InN growth, which was resulted from indium accumulation on surface owing to In-N bonding difficulty on certain crystal faces of a-plane InN surface. Even using excess N-flux, indium accumulation could still be found in initial growth and formed 3-dimension-like patterns on a-plane InN surface which resulted in rough surface morphology. By reducing growth rate, surface roughness was improved because indium atoms could have more time to migrate to suitable position. Nonetheless, basal stacking fault density and crystal anisotropic property were not affected by growth rate. - Highlights: • High growth temperature could cause indium accumulation on a-plane InN surface. • Indium accumulation on a-plane InN surface causes rough surface. • Low growth rate improves surface morphology but not crystal quality.

Structure analysis of InN film using extended X-ray absorption fine structure method

Energy Technology Data Exchange (ETDEWEB)

Miyajima, T.; Kobayashi, T.; Hirata, S. [Core Technology Development Center, Core Technology and Network Company, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014 (Japan); Kudo, Y.; Liu, K.L. [Technology Solutions Center, Sony Corporation, 4-16-1 Okata, Atsugi, Kanagawa 243-0021 (Japan); Uruga, T.; Honma, T. [Japan Synchrotron Radiation Research Institute, Mikazuki-cho, Hyogo 679-5198 (Japan); Saito, Y.; Hori, M.; Nanishi, Y. [Department of Photonics, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577 (Japan)

2002-12-01

We investigated the local atomic structure around In atoms of MBE-grown InN which has a direct bandgap energy of 0.8 eV, using extended X-ray absorption fine structure (EXAFS) oscillation of In K-edge. The signals from the first-nearest neighbor atoms (N) and second-nearest atoms (In) from In atoms were clearly observed and the atomic bond length of In-N and In-In was estimated to be d{sub In-N}=0.215 nm and d{sub In-In}=0.353 nm, respectively. The In-N bond length of d{sub In-In}=0.353 nm was closed to the a-axis lattice constant of a=0.3536 nm, which was determined using X-ray diffraction measurements. The obtained local atomic structure agreed with the calculated ideal structure. We conclude, therefore, that the InN film with a bandgap energy of 0.8 eV has a high structural symmetry in the range of a few A around In atoms. (Abstract Copyright [2002], Wiley Periodicals, Inc.)

Structure analysis of InN film using extended X-ray absorption fine structure method

International Nuclear Information System (INIS)

Miyajima, T.; Kobayashi, T.; Hirata, S.; Kudo, Y.; Liu, K.L.; Uruga, T.; Honma, T.; Saito, Y.; Hori, M.; Nanishi, Y.

2002-01-01

We investigated the local atomic structure around In atoms of MBE-grown InN which has a direct bandgap energy of 0.8 eV, using extended X-ray absorption fine structure (EXAFS) oscillation of In K-edge. The signals from the first-nearest neighbor atoms (N) and second-nearest atoms (In) from In atoms were clearly observed and the atomic bond length of In-N and In-In was estimated to be d In-N =0.215 nm and d In-In =0.353 nm, respectively. The In-N bond length of d In-In =0.353 nm was closed to the a-axis lattice constant of a=0.3536 nm, which was determined using X-ray diffraction measurements. The obtained local atomic structure agreed with the calculated ideal structure. We conclude, therefore, that the InN film with a bandgap energy of 0.8 eV has a high structural symmetry in the range of a few A around In atoms. (Abstract Copyright [2002], Wiley Periodicals, Inc.)

Impact of potassium and water on the electronic properties of InN(0001) surfaces

International Nuclear Information System (INIS)

Reiss, S.; Eisenhardt, A.; Krischok, S.; Himmerlich, M.

2014-01-01

In this work we investigate the interaction of potassium and water with 2 x 2 reconstructed InN(0001) surfaces prepared by plasma-assisted molecular beam epitaxy. The influence of adsorbate-substrate-interaction on surface properties is characterized in-situ by photoelectron spectroscopy. Potassium exposure leads to a strong reduction in the work function Φ to 1.6 eV revealing a charge transfer from the adsorbate to the InN surface. In parallel, a reduction of the surface downward band bending by 0.2 eV and hence a reduced electron accumulation density is observed. While interaction of water with clean InN(0001)-2 x 2 surfaces induces only minor changes in the surface band bending, water adsorption at potassium covered InN(0001) leads to a reversal of the K-induced reduction in surface band bending and a slight increase of Φ to 2.4 eV. These results show that surrounding water modifies the interaction of potassium with InN(0001) surfaces. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Radiation defects in InN irradiated with high-energy electrons

International Nuclear Information System (INIS)

Zhivul'ko, V.D.; Mudryj, A.V.; Yakushev, M.V.; Martin, R.; Shaff, V.; Lu, Kh.; Gurskij, A.L.

2013-01-01

The influence of high energy (6 MeV, fluencies 10 15 – 10 18 cm -2 ) electron irradiation on the fundamental absorption and luminescence properties of InN thin films which were grown on sapphire substrates by molecular bean epitaxial has been studied. It is found that electron irradiation increases the electron concentration and band gap energy E g of InN. The shift of the band gap energy E g is a manifestation of the Burshtein-Mossa effect. (authors)

Characterization of as-grown and adsorbate-covered N-polar InN surfaces using in situ photoelectron spectroscopy

International Nuclear Information System (INIS)

Eisenhardt, Anja; Himmerlich, Marcel; Krischok, Stefan

2012-01-01

The surface electronic properties and adsorption behaviour of as-grown and oxidized N-polar InN films are characterized by photoelectron spectroscopy (XPS, UPS). The epitaxial growth of the InN layers was performed by plasma-assisted molecular beam epitaxy on GaN/6H-SiC(000-1). After growth and in situ characterization the InN surfaces were exposed to molecular oxygen to evaluate the adsorption behaviour of O 2 on N-polar InN and to study its impact on the surface electronic properties of the III-nitride material. The results are compared with studies on In-polar InN on GaN/sapphire templates. The as-grown N-polar InN surface exhibits a pronounced surface state at a binding energy of ∝1.6 eV. The valence band minimum lies about 0.8-1.0 eV below the surface Fermi level. Additionally, the XPS core level binding energies for InN(000-1) are reduced compared to InN(0001) films, indicating different surface band bending for clean N-polar and In-polar InN, respectively. The interaction of molecular oxygen with the InN(000-1) surface leads to a downward band bending by 0.1 eV compared to the initial state. Additional adsorption of species from the residual gas of the UHV chamber increases the surface downward band bending. Furthermore two pronounced oxygen related states with an energy distance of ∝5 eV could be detected in the valence band region. The adsorbed oxygen results in an additional component in the N1s core level spectra, which is interpreted as formation of NO x bonds. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

In induced reconstructions of Si(1 1 1) as superlattice matched epitaxial templates for InN growth

International Nuclear Information System (INIS)

Kuyyalil, Jithesh; Tangi, Malleswararao; Shivaprasad, S.M.

2013-01-01

Graphical abstract: Display Omitted Highlights: ► A novel growth method to form InN at low growth temperatures. ► Use of Si reconstruction as a growth template for group III nitrides. ► Band gap variation of InN – Moss–Burstein shift – non-parabolic conduction band for InN. ► Super lattice matching epitaxy of metal induced reconstructions with III–V unit cell. -- Abstract: Indium induced surface reconstructions of Si(1 1 1)-7 × 7 are used as templates to grow high quality InN. We grow InN on Si(1 1 1)-7 × 7, Si(1 1 1)-4 × 1-In and Si(1 1 1)-1 × 1-In reconstructed surfaces and study the quality of the films formed using complementary characterization tools. InN grown on Si(1 1 1)-1 × 1-In reconstruction shows superior film quality with lowest band-edge emission having a narrow full width at half maximum, intense and narrow 0 0 0 2 X-ray diffraction, low surface roughness and carrier concentration an order lower than other samples. We attribute the high quality of the film formed at 300 °C to the integral matching of InN and super lattice dimensions, we also study the reasons for the band gap variation of InN in the literature. Present study demonstrates the proposed Superlattice Matched Epitaxy can be a general approach to grow good quality InN at much lower growth temperature on compatible In induced reconstructions of the Si surface.

Epitaxial growth of InN on c-plane sapphire by pulsed laser deposition with r.f. nitrogen radical source

International Nuclear Information System (INIS)

Ohta, J.; Fujioka, H.; Honke, T.; Oshima, M.

2004-01-01

We have grown InN films on c-plane sapphire substrates by pulsed laser deposition (PLD) with a radio frequency nitrogen radical source for the first time and investigated the effect of the substrate surface nitridation on the structural and electrical properties of InN films with reflection high energy electron diffraction (RHEED), atomic force microscope, the Hall effect measurements and high-resolution X-ray diffraction (HRXRD). RHEED and HRXRD characterizations revealed that high-quality InN grows epitaxially on sapphire by PLD and its epitaxial relationship is InN (0 0 0 1) parallel sapphire (0 0 0 1) and InN [2 -1 -1 0] parallel sapphire [1 0 -1 0]. The InN crystalline quality and the electron mobility are improved by the substrate nitridation process. The area of the pits at the InN surface is reduced by the substrate nitridation process probably due to the reduction in the interface energy between InN and the substrate. The full width at half maximum of the -1 -1 2 4 X-ray rocking curve for InN grown by the present technique without using any buffer layers was as small as 34.8 arcmin. These results indicate that the present technique is promising for the growth of the high-quality InN films

Polarity control and growth mode of InN on yttria-stabilized zirconia (111) surfaces

International Nuclear Information System (INIS)

Kobayashi, Atsushi; Okubo, Kana; Ohta, Jitsuo; Oshima, Masaharu; Fujioka, Hiroshi

2012-01-01

We have found that polarity of epitaxial InN layers has been controlled by choice of a capping material during high-temperature annealing of yttria-stabilized zirconia (YSZ) (111) substrates in air. Angle-resolved X-ray photoelectron spectroscopy has revealed that the amount of segregation of Y atoms to the YSZ surface depended on the capping material of the substrates. In-polar and N-polar InN have been reproducibly grown on Y-segregated and Y-segregation-free YSZ surfaces, respectively. We have also found that the growth of the first monolayer (ML) of N-polar InN proceeds in a step-flow mode which then switches to layer-by-layer mode after the coverage by 1-ML-thick InN. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Raman scattering and Rutherford backscattering studies on InN films grown by plasma-assisted molecular beam epitaxy

International Nuclear Information System (INIS)

Chung, Yee Ling; Peng Xingyu; Liao, Ying Chieh; Yao Shude; Chen, Li Chyong; Chen, Kuei Hsien; Feng, Zhe Chuan

2011-01-01

A series of InN thin films was grown on sapphire substrates via plasma-assisted molecular beam epitaxy (PA-MBE) with different nitrogen plasma power. Various characterization techniques, including Hall, photoluminescence, Raman scattering and Rutherford backscattering, have been employed to study these InN films. Good crystalline wurtzite structures have been identified for all PA-MBE grown InN films on sapphire substrate, which have narrower XRD wurtzite (0002) peaks, showed c-axis Raman scattering allowed longitudinal optical (LO) modes of A 1 and E 1 plus E 2 symmetry, and very weak backscattering forbidden transverse optical (TO) modes. The lower plasma power can lead to the lower carrier concentration, to have the InN film close to intrinsic material with the PL emission below 0.70 eV. With increasing the plasma power, high carrier concentration beyond 1 x 10 20 cm -3 can be obtained, keeping good crystalline perfection. Rutherford backscattering confirmed most of InN films keeping stoichiometrical In/N ratios and only with higher plasma power of 400 W leaded to obvious surface effect and interdiffusion between the substrate and InN film.

A porous layer: an evidence for the deterioration of MOVPE InN grown at high temperature (∝650 C)

International Nuclear Information System (INIS)

Sugita, K.; Hashimoto, A.; Yamamoto, A.

2009-01-01

This paper indicates an evidence for the deterioration of the MOVPE InN during the growth at high temperature (∝650 C). It is noted that the deterioration occurs near the interface and InN film becomes porous layer during the further growth. The porous layer has high electron density. The rate-limiting process of N-face InN decomposition depends on atomic hydrogen. The atomic hydrogen produced by the decomposition of NH 3 is responsible for the deterioration of InN film. The crystal quality of InN improves with decreasing the porous layer which is important for MOVPE InN. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Temperature dependence of InN growth on (0001) sapphire substrates by atmospheric pressure hydride vapor phase epitaxy

International Nuclear Information System (INIS)

Kumagai, Yoshinao; Adachi, Hirokazu; Otake, Aya; Higashikawa, Yoshihiro; Togashi, Rie; Murakami, Hisashi; Koukitu, Akinori

2010-01-01

The temperature dependence of InN growth on (0001) sapphire substrates by atmospheric pressure hydride vapor phase epitaxy (HVPE) was investigated. N-polarity single-crystal InN layers were successfully grown at temperatures ranging from 400 to 500 C. The a and c lattice constants of InN layers grown at 450 C or below were slightly larger than those of InN layers grown above 450 C due to oxygen incorporation that also increased the carrier concentration. The optical absorption edge of the InN layer decreased from above 2.0 to 0.76 eV when the growth temperature was increased from 450 to 500 C. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Adsorption of gas molecules on graphene-like InN monolayer: A first-principle study

Energy Technology Data Exchange (ETDEWEB)

Sun, Xiang; Yang, Qun [Faculty of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, 541004 Guilin (China); Key Laboratory of Optoelectronic Technology & Systems, Education Ministry of China, Chongqing University and College of Optoelectronic Engineering, Chongqing University, 400044 Chongqing (China); Meng, Ruishen [Faculty of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, 541004 Guilin (China); Tan, Chunjian [Key Laboratory of Optoelectronic Technology & Systems, Education Ministry of China, Chongqing University and College of Optoelectronic Engineering, Chongqing University, 400044 Chongqing (China); Liang, Qiuhua [Faculty of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, 541004 Guilin (China); Jiang, Junke [Faculty of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, 541004 Guilin (China); Key Laboratory of Optoelectronic Technology & Systems, Education Ministry of China, Chongqing University and College of Optoelectronic Engineering, Chongqing University, 400044 Chongqing (China); Ye, Huaiyu [Key Laboratory of Optoelectronic Technology & Systems, Education Ministry of China, Chongqing University and College of Optoelectronic Engineering, Chongqing University, 400044 Chongqing (China); Chen, Xianping, E-mail: xianpingchen@cqu.edu.cn [Faculty of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, 541004 Guilin (China); Key Laboratory of Optoelectronic Technology & Systems, Education Ministry of China, Chongqing University and College of Optoelectronic Engineering, Chongqing University, 400044 Chongqing (China)

2017-05-15

Highlights: • A comprehensive adsorption mechanism of InN monolayer is theoretical studied to distinguish the physic/chemi-sorption. • Different adsorption sites for different gases are systematically discussed. • The influence (enhanced or weakened) of external electric field to InN-gas system is well investigated. • The influences of gas adsorption to the optical properties (work function and light adsorption ability) of InN monolayer are also researched. - Abstract: Using first-principles calculation within density functional theory (DFT), we study the gas (CO, NH{sub 3}, H{sub 2}S, NO{sub 2}, NO, SO{sub 2}) adsorption properties on the surface of single-layer indium nitride (InN). Four different adsorption sites (Bridge, In, N, Hollow) are chosen to explore the most sensitive adsorption site. On the basis of the adsorption energy, band gap and charge transfer, we find that the most energetic favourable site is changeable between In site and N site for different gases. Moreover, our results reveal that InN is sensitive to NH{sub 3}, SO{sub 2}, H{sub 2}S and NO{sub 2}, by a physisorption or a chemisorption nature. We also perform a perpendicular electric field to the system and find that the applied electric field has a significant effect for the adsorption process. Besides, we also observed the desorption effects on NH{sub 3} adsorbed at the hollow site of InN when the electric field applied. In addition, the optical properties of InN monolayer affected by different gases are also discussed. Most of the gas adsorptions will cause the inhibition of light adsorption while the others can reduce the work function or enhance the adsorption ability in visible region. Our theoretical results indicate that monolayer InN is a promising candidate for gas sensing applications.

Theoretical Investigation on Structural and Electronic Properties of InN Growth on Ce-Stabilized Zirconia (111 Substrates

Directory of Open Access Journals (Sweden)

Yao Guo

2016-01-01

Full Text Available The structural and electronic properties of InN on Ce-stabilized zirconia (CeSZ (111 substrates are investigated using first-principles calculations based on density functional theory with GGA + U method. Surface energy calculations indicate that the structure of Ce-segregated surface is more energetically stable than that of Ce-segregation-free surface. Adsorption energies of indium and nitrogen atoms on both Ce-segregated and Ce-segregation-free CeSZ (111 surfaces at the initial growth stage have been studied. The results suggest that the first layer of InN films consists of a nitrogen layer, which leads to epitaxial relationships between InN (0001 // CeSZ (111 and InN [112¯0] // CeSZ [11¯0]. In addition, density of states (DOS analysis revealed that the hybridization effect plays a crucial role in determining the interface structure for the growth of InN on CeSZ (111 surfaces. Furthermore, adsorption energies of indium atoms on the nitrogen layer have also been evaluated in order to investigate the lattice polarity determination for InN films. It was found that an indium atom preferentially adsorbs at the center of three nitrogen atoms stacked on the CeSZ substrate, which results in the formation of In-polarity InN.

In-situ SiN{sub x}/InN structures for InN field-effect transistors

Energy Technology Data Exchange (ETDEWEB)

Zervos, Ch., E-mail: hzervos@physics.uoc.gr; Georgakilas, A. [Microelectronics Research Group (MRG), Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology-Hellas - FORTH, P.O. Box 1385, GR-70013 Heraklion, Crete (Greece); Department of Physics, University of Crete, P.O. Box 2208, GR-71003 Heraklion, Crete (Greece); Adikimenakis, A.; Kostopoulos, A.; Kayambaki, M.; Tsagaraki, K.; Konstantinidis, G. [Microelectronics Research Group (MRG), Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology-Hellas - FORTH, P.O. Box 1385, GR-70013 Heraklion, Crete (Greece); Beleniotis, P. [Department of Physics, University of Crete, P.O. Box 2208, GR-71003 Heraklion, Crete (Greece)

2016-04-04

Critical aspects of InN channel field-effect transistors (FETs) have been investigated. SiN{sub x} dielectric layers were deposited in-situ, in the molecular beam epitaxy system, on the surface of 2 nm InN layers grown on GaN (0001) buffer layers. Metal-insulator-semiconductor Ni/SiN{sub x}/InN capacitors were analyzed by capacitance-voltage (C-V) and current-voltage measurements and were used as gates in InN FET transistors (MISFETs). Comparison of the experimental C-V results with self-consistent Schrödinger-Poisson calculations indicates the presence of a positive charge at the SiN{sub x}/InN interface of Q{sub if} ≈ 4.4 – 4.8 × 10{sup 13 }cm{sup −2}, assuming complete InN strain relaxation. Operation of InN MISFETs was demonstrated, but their performance was limited by a catastrophic breakdown at drain-source voltages above 2.5–3.0 V, the low electron mobility, and high series resistances of the structures.

MOCVD growth of GaN layer on InN interlayer and relaxation of residual strain

Energy Technology Data Exchange (ETDEWEB)

Lee, Keon-Hun; Park, Sung Hyun; Kim, Jong Hack; Kim, Nam Hyuk; Kim, Min Hwa [Department of Materials Science and Engineering, Seoul National University, Seoul, 151-742 (Korea, Republic of); Na, Hyunseok [Department of Advanced Materials Science and Engineering, Daejin University, Pocheon, 487-711 (Korea, Republic of); Yoon, Euijoon, E-mail: eyoon@snu.ac.k [Department of Materials Science and Engineering, Seoul National University, Seoul, 151-742 (Korea, Republic of); Department of Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Suwon 433-270 (Korea, Republic of)

2010-09-01

100 nm InN layer was grown on sapphire c-plane using a metal-organic chemical vapor deposition (MOCVD) system. Low temperature (LT) GaN layer was grown on InN layer to protect InN layer from direct exposure to hydrogen flow during high temperature (HT) GaN growth and/or abrupt decomposition. Subsequently, thick HT GaN layer (2.5 {mu}m thick) was grown at 1000 {sup o}C on LT GaN/InN/sapphire template. Microstructure of epilayer-substrate interface was investigated by transmission electron microscopy (TEM). From the high angle annular dark field TEM image, the growth of columnar structured LT GaN and HT GaN with good crystallinity was observed. Though thickness of InN interlayer is assumed to be about 100 nm based on growth rate, it was not clearly shown in TEM image due to the InN decomposition. The lattice parameters of GaN layers were measured by XRD measurement, which shows that InN interlayer reduces the compressive strain in GaN layer. The relaxation of compressive strain in GaN layer was also confirmed by photoluminescence (PL) measurement. As shown in the PL spectra, red shift of GaN band edge peak was observed, which indicates the reduction of compressive strain in GaN epilayer.

A comparative study on MOVPE InN grown on Ga- and N-polarity bulk GaN

International Nuclear Information System (INIS)

Wang, W.J.; Miwa, H.; Hashimoto, A.; Yamamoto, A.

2006-01-01

The influence of substrate polarity on the growth of InN film by MOVPE was investigated using bulk GaN as a substrate. Single-crystalline In- and N-polarity InN films were obtained on Ga- and N-polarity GaN substrate, respectively. Significant difference of the morphologies between the In- and N-polarity InN films was found. For the In-polarity InN film, the morphology was similar to that grown on sapphire substrate. The film surface was consisted of grains with small facets. In contrast, for the N-polarity InN film, the surface was consisted of large hexagonal shape crystal grains with flat surface. The grain size was about 2 μm in diameter on the average, and two-dimensional growth was enhanced obviously for each crystal grain. The influence of the growth temperature on the morphology, polarity, and optical property was also investigated. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Near-infrared InN quantum dots on high-In composition InGaN

Energy Technology Data Exchange (ETDEWEB)

Soto Rodriguez, Paul E. D.; Gomez, Victor J.; Kumar, Praveen; Calleja, Enrique; Noetzel, Richard [Instituto de Sistemas Optoelectronicos y Microtecnologia (ISOM), Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain)

2013-04-01

We report the growth of InN quantum dots (QDs) on thick InGaN layers with high In composition (>50%) by molecular beam epitaxy. Optimized growth conditions are identified for the InGaN layers at reduced growth temperature and increased active N flux resulting in minimized phase separation and defect generation. The InN QDs grown on top of the optimized InGaN layer exhibit small size, high density, and photoluminescence up to room temperature. The InN/InGaN QDs reveal excellent potential for intermediate band solar cells with the InGaN and InN QD bandgap energies tuned to the best match of absorption to the solar spectrum.

Customer Satisfaction at the Hospitality Industry: Holiday Inn Helsinki-Vantaa Airport

OpenAIRE

Eld, Anna

2015-01-01

The intention of this Bachelor’s Degree thesis was to examine and observe the customer service and especially customer satisfaction in a hotel industry, and Holiday Inn Helsinki-Vantaa Airport was selected to be an example for this survey. This survey and thesis is carried out by the author in collaboration with Holiday Inn Helsinki-Vantaa Airport, which was the commissioner of this Bachelor’s Degree thesis. This hotel was chosen since the author of this thesis did her second internship there...

Effects of rapid thermal annealing on the optical and electrical properties of InN epilayers

International Nuclear Information System (INIS)

Shu, G W; Wu, P F; Liu, Y W; Wang, J S; Shen, J L; Lin, T Y; Pong, P J; Chi, G C; Chang, H J; Chen, Y F; Lee, Y C

2006-01-01

We studied the optical and electrical properties of InN epilayers with rapid thermal annealing (RTA). The intensity of the photoluminescence (PL) and the carrier mobility were found to increase as the temperature of RTA was increased. We suggest that the formation of compensating acceptors (indium vacancies) after RTA is responsible for the improvement of the quality in InN. The dependence of the PL emission peak on carrier concentration provides a possible method for estimating the carrier concentration in degenerate InN. (letter to the editor)

75 FR 33629 - Developing Guidance on Naming, Labeling, and Packaging Practices to Reduce Medication Errors...

Science.gov (United States)

2010-06-14

... DEPARTMENT OF HEALTH AND HUMAN SERVICES Food and Drug Administration [Docket No. FDA-2010-N-0168... workshop will be held at the Holiday Inn College Park, 10000 Baltimore Ave., College Park, MD 20740. FOR... intended to assist the agency in developing draft guidance for industry on describing practices for naming...

PHYSICAL PROPERTIES OF InN PARTICLES OBTAINED BY RF MAGNETRON SPUTTERING

Directory of Open Access Journals (Sweden)

Roberto Bernal Correa

2014-01-01

Full Text Available InN layers were prepared by magnetron sputtering, in a mixed atmosphere of argon and nitrogen on Si substrates (100, Si (111, and glass. The substrate temperature Ts was varied (300-500 oC in order to correlate it with the optical, structural, and morphological properties of the layers. X-ray results have revealed a presence of hexagonal InN type wurtzite in each of the layers in addition to oxides of indium (InxOy attributed to different factors. Dependence was evident on the crystalline quality of each layer according to Ts. The optical absorption coefficient and the band gap were determined from the absorbance and transmittance spectra obtained by UV/Vis. Vibration modes associated with the semiconductor InN and InxOy were identified by Raman microscopy. The morphology of the layers and the grain size was analyzed from SEM micrographs where it was determined the formation of particulates  ~ 0.5 mm and ~ 50 nm of different geometries.

Molecular beam epitaxy of InN layers on Sapphire, GaN and indium tin oxide

Energy Technology Data Exchange (ETDEWEB)

Denker, Christian; Landgraf, Boris; Schuhmann, Henning; Malindretos, Joerg; Seibt, Michael; Rizzi, Angela [IV. Physikalisches Institut, Georg-August-Universitaet Goettingen (Germany); Segura-Ruiz, Jaime; Gomez-Gomez, Maribel; Cantarero, Andres [Materials Science Institute, University of Valencia, Paterna (Spain)

2009-07-01

Among the group-III nitrides semiconductors, InN is the one with the narrowest gap (0.67 eV), lowest effective electron mass and highest peak drift velocity. It is therefore a very interesting material for several applications, in particular semiconductor solar cells. Furthermore, the high electron affinity makes it suitable also as electrode material for organic solar cells. InN layers were grown by molecular beam epitaxy on MOCVD GaN templates, on bare c-plane sapphire and on polycrystalline indium tin oxide. On all substrates the III-V ratio as well as the substrate temperature was varied. A RHEED analysis of InN growth on GaN showed a relatively sharp transition from N-rich and columnar growth to In-rich growth with droplet formation by increasing the In flux impinging on the surface. The InN layers on single crystalline substrates were characterized by SEM, AFM, XRD, PL and Raman. The InN layers on ITO were mainly analyzed with respect to the surface morphology with SEM. HRTEM in cross section gives insight into the structure of the interface to the ITO substrate.

Applications of ZnO:Al deposited by RF sputtering to InN low-cost technology

Energy Technology Data Exchange (ETDEWEB)

Fernandez, S. [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Madrid (Spain); Naranjo, F.B.; Valdueza-Felip, S. [Grupo de Ingenieria Fotonica, Departamento de Electronica, Escuela Politecnica Superior, Universidad de Alcala Campus Universitario, Madrid (Spain); Abril, O. de [ISOM y Departamento de Fisica Aplicada, Escuela Tecnica Superior de Ingenieros de Telecomunicacion, Universidad Politenica de Madrid (Spain)

2010-07-15

InN/ZnO:Al heterostructures deposited at low temperature on different substrates by radio-frequency sputtering were studied. Using ZnO:Al as buffer layer, an improvement in the InN structural properties was achieved. Evaluating ZnO:Al as contact on InN, an Ohmic behaviour for the as-deposited layer on InN was achieved. A specific contact resistance of 2 {omega} cm{sup 2} was measured without any post-deposition treatment. These properties could result very promising for optoelectronic device applications. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

Analysis of biaxial strain in InN(0001) epilayers grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Dimakis, E.; Domagala, J.; Iliopoulos, E.; Adikimenakis, A.; Georgakilas, A.

2007-01-01

The in-plane lattice parameters of InN, GaN and Al 2 O 3 in a InN/GaN/Al 2 O 3 (0001) heterostructure have been measured as a function of temperature in the range of 25-350 C, using high resolution X-ray diffraction. The results reveal that both the GaN and InN crystals follow the in-plane thermal expansion of the Al 2 O 3 substrate's lattice and there is no rearrangement of misfit dislocations at the InN/GaN and GaN/Al 2 O 3 interfaces. It was also found that either compressive or tensile character of residual biaxial strain is possible for the InN films, depending on the two-dimensional (2D) or three-dimensional (3D) growth mode of InN on the GaN(0001) buffer layer. The tensile strain is inherent to the nucleation and coalescence of 3D islands. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

High-phase-purity zinc-blende InN on r-plane sapphire substrate with controlled nitridation pretreatment

International Nuclear Information System (INIS)

Hsiao, C.-L.; Wu, C.-T.; Hsu, H.-C.; Hsu, G.-M.; Chen, L.-C.; Liu, T.-W.; Shiao, W.-Y.; Yang, C. C.; Gaellstroem, Andreas; Holtz, Per-Olof; Chen, C.-C.; Chen, K.-H.

2008-01-01

High-phase-purity zinc-blende (zb) InN thin film has been grown by plasma-assisted molecular-beam epitaxy on r-plane sapphire substrate pretreated with nitridation. X-ray diffraction analysis shows that the phase of the InN films changes from wurtzite (w) InN to a mixture of w-InN and zb-InN, to zb-InN with increasing nitridation time. High-resolution transmission electron microscopy reveals an ultrathin crystallized interlayer produced by substrate nitridation, which plays an important role in controlling the InN phase. Photoluminescence emission of zb-InN measured at 20 K shows a peak at a very low energy, 0.636 eV, and an absorption edge at ∼0.62 eV is observed at 2 K, which is the lowest bandgap reported to date among the III-nitride semiconductors

Growth and properties of InN, InGaN, and InN/InGaN quantum wells

Energy Technology Data Exchange (ETDEWEB)

Naoi, H.; Na, H. [Center for Promotion of the COE Program, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577 (Japan); Kurouchi, M.; Muto, D.; Takado, S.; Araki, T.; Nanishi, Y. [Dept. of Photonics, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577 (Japan); Miyajima, T. [Optoelectronics Laboratory, Materials Laboratories, Sony Corporation, 4-14-1 Asahi, Atsugi, Kanagawa 243-0014 (Japan)

2006-01-01

This paper describes our recent progress on InN, In-rich In{sub x}Ga{sub 1-x}N, and InN/In{sub x}Ga{sub 1-x}N quantum wells (QWs) grown by radio-frequency plasma-assisted molecular-beam epitaxy. Among the essential growth sequences to obtain high-quality InN, the nitridation process of (0001) sapphire substrates was reexamined. It was found that the lower-temperature and longer-period nitridation-process was very effective in improving crystalline quality of InN films. We succeeded in dramatically improving c -axis orientation of InN films without deteriorating their a -axis orientation by nitridating the substrates at a relatively low-temperature of 300 C for a relatively long period of 2 h. The full widths at half maximum (FWHMs) of (0002) X-ray rocking curves as narrow as 1 arcmin were obtained from only 400 nm thick InN films. These FWHMs are the narrowest value ever reported for InN and moreover approximately a twentieth part of the values obtained from our conventional InN films with a similar thickness, which were grown via the conventional nitridation process carried out at 550 C for 1 h. Furthermore interference fringes in X-ray diffraction ({omega}-2{theta} scan) were observed from these improved InN films. These high crystalline quality InN layers have been employed as a template for the growth of In-rich In{sub x}Ga{sub 1-x}N layers (0.70{<=}x{<=}0.94). The resultant In{sub x}Ga{sub 1-x}N layers have shown dramatic improvements in not only the surface morphology but also both the a- and c-axis orientations. By employing In{sub 0.8}Ga{sub 0.2}N layers of improved quality as the bottom barrier layer, InN/In{sub 0.8}Ga{sub 0.2}N multiple quantum well (MQW) and single quantum well (SQW) structures with different well widths were fabricated. Clear satellite peaks of X-ray diffraction were observed from these MQW structures. Both of these SQW and MQW structures have exhibited a blue shift of the photoluminescence peak energy with decreasing well width

Evaluation of the Environmental Health Conditions of Qom Hotels & Inns

Directory of Open Access Journals (Sweden)

B. Farzinnia

2009-02-01

Full Text Available Background and ObjectivesTourism is one of the three major global industries with 4 percent annual economic growth. Qom with roughly 17 million tourists in 2005 was the second religious tourism center in Iran. This study was designed to determine the environmental health criteria of Qom hotels and inns in 2007.MethodsThis descriptive - cross sectional study was carried out based on a standard check list of substance of edible, drinkable, cosmetic and hygienic products law from ministry of health and medical sciences. The checklist included 73 questions which were completed by face to face interviews and sanitary inspections. After analyzing the results of each residential center, the questionnaires were classified into three categories: hygienic (over 80 score, sanitary (40-79 and unacceptable centers (less than 40. The data were presented and analyzed by descriptive and analytical statistical methods such as X 2 and Fisher exact test.ResultsThe percentages of hygienic, sanitary and unacceptable conditions of hotels and inns were 35.5, 54.8 and 9.7, respectively. There was a direct relationship between academic degree of residential managers and the validity of employees health card (P=0.042 ConclusionBased on this the research, the environmental status of Qom hotels and inns was in relatively desirable conditions. Residential places with unacceptable condition were almost located in the old region of the city (e.g. around the Holly Shrine. Due to the structural failures, architectural problems and tremendous cost for repairs, it’s better that their activities be stopped and banned by government. With regard to the high percentage of hotels with sanitary conditions, at least improvements in health conditions accompanied by training and supervision are recommended. Keywords: Environmental Health; Environment and Public Health; Hotel; Inn; Qom, Iran.

4th INNS Symposia Series on Computational Intelligence in Information Systems

CERN Document Server

Au, Thien

2015-01-01

This book constitutes the refereed proceedings of the Fourth International Neural Network Symposia series on Computational Intelligence in Information Systems, INNS-CIIS 2014, held in Bandar Seri Begawan, Brunei in November 2014. INNS-CIIS aims to provide a platform for researchers to exchange the latest ideas and present the most current research advances in general areas related to computational intelligence and its applications in various domains. The 34 revised full papers presented in this book have been carefully reviewed and selected from 72 submissions. They cover a wide range of topics and application areas in computational intelligence and informatics.  

Ab-initio study of Mg-doped InN(0001 surface

Directory of Open Access Journals (Sweden)

A. Belabbes

2013-01-01

Full Text Available We study the incorporation of Mg atoms into the InN(0001 surface. Energies and atomic geometries are described within density functional theory, while the electronic structure is investigated by an approximate quasiparticle method that yields a gap value of 0.7 eV for bulk InN. The formation of substitutional Mg is energetically favored in the surface layer. The surface electronic structure is less influenced by Mg-derived states. The Fermi level is pinned by In-derived surface states. With increasing depth of Mg beneath the surface the Fermi-level position moves toward the valence band top, suggesting formation of holes and, hence, p-doping of Mg in bulk-like layers.

Crystallinity, Surface Morphology, and Photoelectrochemical Effects in Conical InP and InN Nanowires Grown on Silicon.

Science.gov (United States)

Parameshwaran, Vijay; Xu, Xiaoqing; Clemens, Bruce

2016-08-24

The growth conditions of two types of indium-based III-V nanowires, InP and InN, are tailored such that instead of yielding conventional wire-type morphologies, single-crystal conical structures are formed with an enlarged diameter either near the base or near the tip. By using indium droplets as a growth catalyst, combined with an excess indium supply during growth, "ice cream cone" type structures are formed with a nanowire "cone" and an indium-based "ice cream" droplet on top for both InP and InN. Surface polycrystallinity and annihilation of the catalyst tip of the conical InP nanowires are observed when the indium supply is turned off during the growth process. This growth design technique is extended to create single-crystal InN nanowires with the same morphology. Conical InN nanowires with an enlarged base are obtained through the use of an excess combined Au-In growth catalyst. Electrochemical studies of the InP nanowires on silicon demonstrate a reduction photocurrent as a proof of photovolatic behavior and provide insight as to how the observed surface polycrystallinity and the resulting interface affect these device-level properties. Additionally, a photovoltage is induced in both types of conical InN nanowires on silicon, which is not replicated in epitaxial InN thin films.

Growth of InN on 6H-SiC by plasma assisted molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Brown, April S.; Kim, Tong-Ho; Choi, Soojeong; Wu, Pae; Morse, Michael [Department of Electrical and Computer Engineering, Duke University, 128 Hudson Hall, Durham, NC (United States); Losurdo, Maria; Giangregorio, Maria M.; Bruno, Giovanni [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM UdR Bari, via Orabona, 4, 70126 Bari (Italy); Moto, Akihiro [Innovation Core SEI, Inc., 3235 Kifer Road, Santa Clara, CA 95051 (United States)

2006-06-15

We have investigated the growth of InN films by plasma assisted molecular beam epitaxy on the Si-face of 6H-SiC(0001). Growth is performed under In-rich conditions using a two-step process consisting of the deposition of a thin, low-temperature 350 C InN buffer layer, followed by the subsequent deposition of the InN epitaxial layer at 450 C. The effect of buffer annealing is investigated. The structural and optical evolution of the growing layer has been monitored in real time using RHEED and spectroscopic ellipsometry. Structural, morphological, electrical and optic properties are discussed. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Heteroepitaxial growth of In-face InN on GaN (0001) by plasma-assisted molecular-beam epitaxy

International Nuclear Information System (INIS)

Dimakis, E.; Iliopoulos, E.; Tsagaraki, K.; Kehagias, Th.; Komninou, Ph.; Georgakilas, A.

2005-01-01

The thermodynamic aspects of indium-face InN growth by radio frequency plasma-assisted molecular-beam epitaxy (rf-MBE) and the nucleation of InN on gallium-face GaN (0001) surface were investigated. The rates of InN decomposition and indium desorption from the surface were measured in situ using reflected high-energy electron diffraction and the rf-MBE 'growth window' of In-face InN (0001) was identified. It is shown that sustainable growth can be achieved only when the arrival rate of active nitrogen species on the surface is higher than the arrival rate of indium atoms. The maximum substrate temperature permitting InN growth as a function of the active nitrogen flux was determined. The growth mode of InN on Ga-face GaN (0001) surface was investigated by reflected high-energy electron diffraction and atomic force microscopy. It was found to be of the Volmer-Weber-type for substrate temperatures less than 350 deg. C and of the Stranski-Krastanov for substrate temperatures between 350 and 520 deg. C. The number of monolayers of initial two-dimensional growth, in the case of Stranski-Krastanov mode, varies monotonically with substrate temperature, from 2 ML at 400 deg. C to about 12 ML at 500 deg. C. The evolution and coalescence of nucleated islands were also investigated as a function of substrate temperature. It was found that at higher temperature their coalescence is inhibited leading to porous-columnar InN thin films, which exhibit growth rates higher than the nominal value. Therefore, in order to achieve continuous InN layers on GaN (0001) a two-step growth approach is introduced. In that approach, InN is nucleated at low temperatures on GaN and the growth continues until full coalescence of the nucleated islands. Subsequently, this nucleation layer is overgrown at higher substrate temperature in order to achieve high-quality continuous films. The InN films grown by the two-step method were investigated by x-ray diffraction, Hall-effect measurements, and

Generation of ultra-small InN nanocrystals by pulsed laser ablation of suspension in organic solution

Energy Technology Data Exchange (ETDEWEB)

Kursungoez, Canan; Uzcengiz Simsek, Elif; Ortac, Buelend [Bilkent University, Materials Science and Nanotechnology Department, UNAM-National Nanotechnology Research Center, Ankara (Turkey); Bilkent University, Institute of Materials Science and Nanotechnology, Ankara (Turkey); Tuzakli, Refik [Bilkent University, Materials Science and Nanotechnology Department, UNAM-National Nanotechnology Research Center, Ankara (Turkey)

2017-03-15

Nanostructures of InN have been extensively investigated since nano-size provides a number of advantages allowing applications in nanoscale electronic and optoelectronic devices. It is quite important to obtain pure InN nanocrystals (InN-NCs) to reveal the characteristic features, which gain interest in the literature. Here, we proposed a new approach for the synthesis of ultra-small hexagonal InN-NCs by using suspension of micron-sized InN powder in ethanol with pulsed laser ablation method. The liquid environment, laser energy and ablation time were optimized and a post-synthesis treatment, centrifugation, was performed to achieve InN-NCs with the smallest size. Besides, the micron-sized InN powder suspension, as a starting material, enabled us to obtain InN-NCs having diameters smaller than 5 nm. We also presented a detailed characterization of InN-NCs and demonstrated that the formation mechanism mainly depends on the fragmentation due to laser irradiation of the suspension. (orig.)

Generation of ultra-small InN nanocrystals by pulsed laser ablation of suspension in organic solution

International Nuclear Information System (INIS)

Kursungoez, Canan; Uzcengiz Simsek, Elif; Ortac, Buelend; Tuzakli, Refik

2017-01-01

Nanostructures of InN have been extensively investigated since nano-size provides a number of advantages allowing applications in nanoscale electronic and optoelectronic devices. It is quite important to obtain pure InN nanocrystals (InN-NCs) to reveal the characteristic features, which gain interest in the literature. Here, we proposed a new approach for the synthesis of ultra-small hexagonal InN-NCs by using suspension of micron-sized InN powder in ethanol with pulsed laser ablation method. The liquid environment, laser energy and ablation time were optimized and a post-synthesis treatment, centrifugation, was performed to achieve InN-NCs with the smallest size. Besides, the micron-sized InN powder suspension, as a starting material, enabled us to obtain InN-NCs having diameters smaller than 5 nm. We also presented a detailed characterization of InN-NCs and demonstrated that the formation mechanism mainly depends on the fragmentation due to laser irradiation of the suspension. (orig.)

Determination of dislocation densities in InN

Energy Technology Data Exchange (ETDEWEB)

Ardali, Sukru; Tiras, Engin [Department of Physics, Faculty of Science, Anadolu University, Yunus Emre Campus, Eskisehir 26470 (Turkey); Gunes, Mustafa; Balkan, Naci [School of Computer Science and Electronic Engineering, University of Essex, Wivenhoe Park, Colchester CO4 3SQ (United Kingdom); Ajagunna, Adebowale Olufunso; Iliopoulos, Eleftherios; Georgakilas, Alexandros [Microelectronics Research Group, IESL, FORTH and Physics Department, University of Crete, P.O. Box 1385, 71110 Heraklion-Crete (Greece)

2012-03-15

The magneto-transport measurements, carried out at magnetic fields up to 11 T and in the temperature range between 1.8 K and 300 K, are used to investigate the scattering mechanisms in GaN/InN/AlN double heterojunctions. Theoretical modeling is based on a variational approach to solving Boltzmann transport equation. It is found that dislocation scattering is the dominant scattering mechanisms at low temperatures because of the large lattice mismatch with the substrate and hence the high density of dislocations in these material systems. Nevertheless, InN epilayers are characterized by a high background carrier density, probably associated with unwanted impurities. Therefore, we also included in our calculations the ionized impurity scattering. However, the effect of ionized impurity scattering as well as the acoustic phonon scattering, remote- background-ionized impurity scattering, and interface roughness scattering on electron mobility are much smaller than that of dislocation scattering. The dislocation densities, in samples with InN thicknesses of 0.4, 0.6 and 0.8 {mu}m, are then determined from the best fit to the experimental data for the low-temperature transport mobility (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Effective electron mass and phonon modes in n-type hexagonal InN

Science.gov (United States)

Kasic, A.; Schubert, M.; Saito, Y.; Nanishi, Y.; Wagner, G.

2002-03-01

Infrared spectroscopic ellipsometry and micro-Raman scattering are used to study vibrational and electronic properties of high-quality hexagonal InN. The 0.22-μm-thick highly n-conductive InN film was grown on c-plane sapphire by radio-frequency molecular-beam epitaxy. Combining our results from the ellipsometry data analysis with Hall-effect measurements, the isotropically averaged effective electron mass in InN is determined as 0.14m0. The resonantly excited zone center E1 (TO) phonon mode is observed at 477 cm-1 in the ellipsometry spectra. Despite the high electron concentration in the film, a strong Raman mode occurs in the spectral range of the unscreened A1(LO) phonon. Because an extended carrier-depleted region at the sample surface can be excluded from the ellipsometry-model analysis, we assign this mode to the lower branch of the large-wave-vector LO-phonon-plasmon coupled modes arising from nonconserving wave-vector scattering processes. The spectral position of this mode at 590 cm-1 constitutes a lower limit for the unscreened A1(LO) phonon frequency.

Synthesis of InN nanoparticles by rapid thermal ammonolysis

Czech Academy of Sciences Publication Activity Database

Šimek, P.; Sedmidubský, D.; Klimová, K.; Huber, Š.; Brázda, Petr; Mikulics, M.; Jankovský, O.; Sofer, Z.

2014-01-01

Roč. 16, č. 12 (2014), "2805-1"-"2805-11" ISSN 1388-0764 R&D Projects: GA ČR GA13-20507S Institutional support: RVO:68378271 Keywords : InN * nanoparticles * nanocrystals Subject RIV: CA - Inorganic Chemistry Impact factor: 2.184, year: 2014

Photomodulated reflectance study on optical property of InN thin films grown by reactive gas-timing rf magnetron sputtering

International Nuclear Information System (INIS)

Porntheeraphat, S.; Nukeaw, J.

2008-01-01

The photoreflectance (PR) spectroscopy has been applied to investigate the band-gap energy (E g ) of indium nitride (InN) thin films grown by rf magnetron sputtering. A novel reactive gas-timing technique applied for the sputtering process has been successfully employed to grow InN thin films without neither substrate heating nor post annealing. The X-ray diffraction (XRD) patterns exhibit strong peaks in the orientation along (0 0 2) and (1 0 1) planes, corresponding to the polycrystalline hexagonal-InN structure. The band-gap transition energy of InN was determined by fitting the PR spectra to a theoretical line shape. The PR results show the band-gap energy at 1.18 eV for hexagonal-InN thin films deposited at the rf powers of 100 and 200 W. The high rf sputtering powers in combination with the gas-timing technique should lead to a high concentration of highly excited nitrogen ions in the plasma, which enables the formation of InN without substrate heating. Auger electron spectroscopy (AES) measurements further reveal traces of oxygen in these InN films. This should explain the elevated band-gap energy, in reference to the band-gap value of 0.7 eV for pristine InN films

A control technique of oxygen contamination by Ga beam irradiation in InN MOMBE growth

International Nuclear Information System (INIS)

Isamoto, K.; Uesaka, Y.; Yamamoto, A.; Hashimoto, A.

2006-01-01

We have investigated about a control technique of oxygen contamination into the InN layers by simultaneous irradiation of Ga beam during RF-MOMBE growth using the combination of the TMIn and the RF-plasma nitrogen sources. Red shifts of the band gap energy and the improvement of the electrical properties have been achieved by the Ga beam irradiation. The suppression mechanism of the oxygen contamination has been discussed from the experimental results of the InN growth by the RF-MOMBE with the Ga beam irradiation. The present results strongly indicate that the simultaneous irradiation of the Ga beam would be useful to suppress the oxygen contamination into the InN layers during the growth. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Ultrafast Carrier Relaxation in InN Nanowires Grown by Reactive Vapor Transport

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Zervos Matthew

2008-01-01

Full Text Available Abstract We have studied femtosecond carrier dynamics in InN nanowires grown by reactive vapor transport. Transient differential absorption measurements have been employed to investigate the relaxation dynamics of photogenerated carriers near and above the optical absorption edge of InN NWs where an interplay of state filling, photoinduced absorption, and band-gap renormalization have been observed. The interface between states filled by free carriers intrinsic to the InN NWs and empty states has been determined to be at 1.35 eV using CW optical transmission measurements. Transient absorption measurements determined the absorption edge at higher energy due to the additional injected photogenerated carriers following femtosecond pulse excitation. The non-degenerate white light pump-probe measurements revealed that relaxation of the photogenerated carriers occurs on a single picosecond timescale which appears to be carrier density dependent. This fast relaxation is attributed to the capture of the photogenerated carriers by defect/surface related states. Furthermore, intensity dependent measurements revealed fast energy transfer from the hot photogenerated carriers to the lattice with the onset of increased temperature occurring at approximately 2 ps after pulse excitation.

Investigation of the near-surface structures of polar InN films by chemical-state-discriminated hard X-ray photoelectron diffraction

International Nuclear Information System (INIS)

Yang, A. L.; Yamashita, Y.; Kobata, M.; Yoshikawa, H.; Sakata, O.; Kobayashi, K.; Matsushita, T.; Píš, I.; Imura, M.; Yamaguchi, T.; Nanishi, Y.

2013-01-01

Near-surface structures of polar InN films were investigated by laboratory-based hard X-ray photoelectron diffraction (HXPD) with chemical-state-discrimination. HXPD patterns from In 3d 5/2 and N 1s core levels of the In-polar and N-polar InN films were different from each other and compared with the simulation results using a multiple-scattering cluster model. It was found that the near-surface structure of the In-polar InN film was close to the ideal wurtzite structure. On the other hand, on the N-polar InN film, defects-rich surface was formed. In addition, the existence of the In-polar domains was observed in the HXPD patterns.

High electron mobility InN

International Nuclear Information System (INIS)

Jones, R. E.; Li, S. X.; Haller, E. E.; van Genuchten, H. C. M.; Yu, K. M.; Ager, J. W. III; Liliental-Weber, Z.; Walukiewicz, W.; Lu, H.; Schaff, W. J.

2007-01-01

Irradiation of InN films with 2 MeV He + ions followed by thermal annealing below 500 deg. C creates films with high electron concentrations and mobilities, as well as strong photoluminescence. Calculations show that electron mobility in irradiated samples is limited by triply charged donor defects. Subsequent thermal annealing removes a fraction of the defects, decreasing the electron concentration. There is a large increase in electron mobility upon annealing; the mobilities approach those of the as-grown films, which have 10 to 100 times smaller electron concentrations. Spatial ordering of the triply charged defects is suggested to cause the unusual increase in electron mobility

Epitaxial growth of high purity cubic InN films on MgO substrates using HfN buffer layers by pulsed laser deposition

International Nuclear Information System (INIS)

Ohba, R.; Ohta, J.; Shimomoto, K.; Fujii, T.; Okamoto, K.; Aoyama, A.; Nakano, T.; Kobayashi, A.; Fujioka, H.; Oshima, M.

2009-01-01

Cubic InN films have been grown on MgO substrates with HfN buffer layers by pulsed laser deposition (PLD). It has been found that the use of HfN (100) buffer layers allows us to grow cubic InN (100) films with an in-plane epitaxial relationship of [001] InN //[001] HfN //[001] MgO . X-ray diffraction and electron back-scattered diffraction measurements have revealed that the phase purity of the cubic InN films was as high as 99%, which can be attributed to the use of HfN buffer layers and the enhanced surface migration of the film precursors by the use of PLD. - Graphical abstract: Cubic InN films have been grown on MgO substrates with HfN buffer layers by pulsed laser deposition (PLD). It has been revealed that the phase purity of the cubic InN films was as high as 99 %, which can be attributed to the use of HfN buffer layers and the enhanced surface migration of the film precursors by the use of PLD.

Role of dislocations and carrier concentration in limiting the electron mobility of InN films grown by plasma assisted molecular beam epitaxy

Science.gov (United States)

Tangi, Malleswararao; De, Arpan; Shivaprasad, S. M.

2018-01-01

We report the molecular beam epitaxy growth of device quality InN films on GaN epilayer and nano-wall network (NWN) templates deposited on c-sapphire by varying the film thickness up to 1 μm. The careful experiments are directed towards obtaining high mobility InN layers having a low band gap with improved crystal quality. The dislocation density is quantified by using high resolution X-ray diffraction rocking curve broadening values of symmetric and asymmetric reflections, respectively. We observe that the dislocation density of the InN films grown on GaN NWN is less than that of the films grown on the GaN epilayer. This is attributed to the nanoepitaxial lateral overlayer growth (ELOG) process, where the presence of voids at the interface of InN/GaN NWN prevents the propagation of dislocation lines into the InN epilayers, thereby causing less defects in the overgrown InN films. Thus, this new adaptation of the nano-ELOG growth process enables us to prepare InN layers with high electron mobility. The obtained electron mobility of 2121 cm2/Vs for 1 μm thick InN/GaN NWN is comparable with the literature values of similar thickness InN films. Furthermore, in order to understand the reasons that limit electron mobility, the charge neutrality condition is employed to study the variation of electron mobility as a function of dislocation density and carrier concentration. Overall, this study provides a route to attaining improved crystal quality and electronic properties of InN films.

Observation of Significant enhancement in the efficiency of a DSSC by InN nanoparticles over TiO 2-nanoparticle films

Science.gov (United States)

Wang, Tsai-Te; Raghunath, P.; Lu, Yun-Fang; Liu, Yu-Chang; Chiou, Chwei-Huawn; Lin, M. C.

2011-06-01

We have studied the effect of InN deposited over TiO2 nanoparticle (NP) films on the performance of dye-sensitized solar cells (DSSCs) using N3 dye with I/I3- electrolyte. A 10-20% increase in efficiency was observed for InN deposited, N3 sensitized 5-8.5 μm thick TiO2 films as compared to similar non-treated films. The deposition of InN was carried out in the temperature range of 573-723 K organometallic chemical vapor deposition (OMCVD). Spectral shifts and DFT calculations with a model anchoring group (R‧COOH) both suggest binding of the N3 dye directly to both InN and the InN/TiO2 sites.

Growth of vertically oriented InN nanorods from In-rich conditions on unintentionally patterned sapphire substrates

Energy Technology Data Exchange (ETDEWEB)

Terziyska, Penka T., E-mail: pterziy1@lakeheadu.ca [Semiconductor Research Laboratory, Department of Electrical Engineering, Lakehead University, 955 Oliver Road, Thunder Bay, ON P7B 5E1 (Canada); Butcher, Kenneth Scott A. [Semiconductor Research Laboratory, Department of Electrical Engineering, Lakehead University, 955 Oliver Road, Thunder Bay, ON P7B 5E1 (Canada); MEAglow Ltd., Box 398, 2400 Nipigon Road, Thunder Bay, ON P7C4W1 (Canada); Rafailov, Peter [Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia (Bulgaria); Alexandrov, Dimiter [Semiconductor Research Laboratory, Department of Electrical Engineering, Lakehead University, 955 Oliver Road, Thunder Bay, ON P7B 5E1 (Canada); MEAglow Ltd., Box 398, 2400 Nipigon Road, Thunder Bay, ON P7C4W1 (Canada)

2015-10-30

Highlights: • Vertical InN nanorods are grown on selective areas of sapphire substrates. • In metal droplets nucleate on the sharp needle apexes on the selective areas. • The preferred orientation and the growth direction of the nanorods are (0 0 0 1). • The nanorods grow from the supersaturated indium melt on their tops. - Abstract: Vertically oriented InN nanorods were grown on selective areas of unintentionally patterned c-oriented sapphire substrates exhibiting sharp needles that preferentially accommodate In-metal liquid droplets, using Migration Enhanced Afterglow (MEAglow) growth technique. We point out that the formation of AlN needles on selected areas can be reproduced intentionally by over-nitridation of unmasked areas of sapphire substrates. The liquid indium droplets serve as a self-catalyst and the nanorods grow from the supersaturated indium melt in the droplet in a vertical direction. X-ray diffraction measurements indicate the presence of hexagonal InN only, with preferred orientation along (0 0 0 1) crystal axis, and very good crystalline quality. The room temperature Raman spectrum shows the presence of the A{sub 1}(TO), E{sub 2}(high) and A{sub 1}(LO) phonon modes of the hexagonal InN.

Investigation of InN layers grown by MOCVD using analytical and high resolution TEM: The structure, band gap, role of the buffer layers

International Nuclear Information System (INIS)

Ruterana, P.; Abouzaid, M.; Gloux, F.; Maciej, W.; Doualan, J.L.; Drago, M.; Schmidtling, T.; Pohl, U.W.; Richter, W.

2006-01-01

In this work we investigate the microstructure of InN layers grown by MOCVD on different buffer layers using TEM (InN, GaN). The large mismatch between the various lattices (InN, sapphire or GaN) leads to particular interface structures. Our local analysis allows to show that at atomic scale, the material has the InN lattice parameters and that no metallic In precipitates are present, meaning that the PL emission below 0.8 eV is a genuine property of the InN semiconductor. It is also shown that the N polar layers, which exhibit a 2D growth, have poorer PL emission than In polar layers. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

CHOICE OF THE INITIAL TREATMENT FOR MILD TO MODERATE ARTERIAL HYPERTENSION IN MOSCOW PRIMARY PRACTICE

Directory of Open Access Journals (Sweden)

S. V. Gatsura

2015-09-01

Full Text Available Aim. To assess the choice of initial pharmacotherapy of uncomplicated mild to moderate arterial hypertension (HT in Moscow primary care as well as to clear up the influence of regulatory measures on this choice.Material and methods. Results of two similar surveys conducted in 2011-2012 (452 respondents and 2013-2014 (273 respondents were compared to estimate preferences of Moscow primary care physicians regarding initial antihypertensive agents for therapy of uncomplicated mild to moderate HT taking into consideration an influence of regulatory requirement to prescribe medicinal products by international nonproprietary name (INN since July 2012. All participants were proposed to write down their preferred antihypertensive agents for initial mono- or combined therapy of mild to moderate HT with moderate cardiovascular risk and absence of compelling indications.Results. Angiotensin converting enzyme inhibitors (ACEI remained the leading class of antihypertensive agents, though their popularity slightly but significantly declined from 44.4% in 2011-12 to 37.2% in 2013-14 (р<0.05. Angiotensin receptor blockers partially displaced the leaders and increased their popularity from 11.3% in 2011-12 to 18.0% in 2013-14 (р<0.01. ACEI/diuretic combination remained on the 3rd position (16.4% and 15.3% respectively. Beta-blockers and diuretics as monotherapy shared 4th and 5th places in this rating. Calcium channel blockers popularity among Moscow prescribers remained unchanged and poor – 2.1%. The most popular medicine by trade name was Noliprel, perindopril/indapamide fixed combination, – 14.0% and 13.7% of respondents in 2011-12 and 2013-14, respectively. The share of medicine products recommended by INN went up from 11.9% to 22.8% among top-10 popular medications (р<0.01.Conclusion. Blockers of renin-angiotensin-aldosterone system remain the leading drugs for the initial treatment of uncomplicated mild to moderate HT without compelling indications

Morphology Controlled Fabrication of InN Nanowires on Brass Substrates

Directory of Open Access Journals (Sweden)

Huijie Li

2016-10-01

Full Text Available Growth of semiconductor nanowires on cheap metal substrates could pave the way to the large-scale manufacture of low-cost nanowire-based devices. In this work, we demonstrated that high density InN nanowires can be directly grown on brass substrates by metal-organic chemical vapor deposition. It was found that Zn from the brass substrates is the key factor in the formation of nanowires by restricting the lateral growth of InN. The nanowire morphology is highly dependent on the growth temperature. While at a lower growth temperature, the nanowires and the In droplets have large diameters. At the elevated growth temperature, the lateral sizes of the nanowires and the In droplets are much smaller. Moreover, the nanowire diameter can be controlled in situ by varying the temperature in the growth process. This method is very instructive to the diameter-controlled growth of nanowires of other materials.

Inhomogeneous electron distribution in InN nanowires: Influence on the optical properties

Energy Technology Data Exchange (ETDEWEB)

Molina-Sanchez, A.; Garro, N.; Garcia-Cristobal, A.; Cantarero, A. [Instituto de Ciencia de los Materiales, Universidad de Valencia (Spain); Segura-Ruiz, J. [European Synchrotron Radiation Facility, Experiments Div., Grenoble (France); Iikawa, F. [Instituto de Fisica Gleb Wataghin - Unicamp, CP 6165, Campinas (Brazil); Denker, C.; Malindretos, J.; Rizzi, A. [IV. Physikalisches Institut, Georg-August Universitaet Goettingen (Germany)

2012-03-15

In this work, we study theoretically and experimentally the influence of the surface electron accumulation on the optical properties of InN nanowires. For this purpose, the photoluminescence and photoluminescence excitation spectra have been measured for a set of self-assembled InN NWs grown under different conditions. The photoluminescence excitation experimental lineshapes have been reproduced by a self-consistent calculation of the absorption in a cylindrical InN nanowires. With the self-consistent model we can explore how the optical absorption depends on nanowires radius and doping concentration. Our model solves the Schroedinger equation for a cylindrical nanowire of infinite length, assuming a parabolic conduction band. The columnar geometry introduces effects in both the electron density and in the self-consistent conduction band profile, with no equivalence in planar layer. On the other hand, the differences in the photoluminescence excitation spectra are related to the inhomogeneous electron distribution inside the nanowires, caused by a bulk donor concentration and a two-dimensional density of ionized surface states. For nanowire radii larger than 30 nm, such concentrations modify the absorption edge and the lineshape, respectively, and can be determined from the comparison with the experimental data (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

PRICING, REIMBURSEMENT, AND HEALTH TECHNOLOGY ASSESSMENT OF MEDICINAL PRODUCTS IN BULGARIA.

Science.gov (United States)

Benisheva-Dimitrova, Tatyana; Sidjimova, Dobriana; Cherneva, Daniela; Kralimarkov, Nikolay

2017-01-01

The aim of this study was to investigate the analysis, discussion, and challenges of the price and reimbursement process of medicinal products in Bulgaria in the period 2000-15 and health technology assessment (HTA) role in these processes. The dynamics of the reform, with respect to the healthcare and pharmaceutical sectors, are tracked by documentary review of regulations, articles, and reports in the European Union (EU), as well as analytical and historical analysis. Pricing and reimbursement processes have passed through a variety of committees between 2003 and 2012. Separate units for pricing and reimbursement of medicinal products were established in Bulgaria for the first time, in 2013, when an independent body, the National Council at Prices and Reimbursement of Medicinal Products, was set up to approve medicinal products with new international nonproprietary names (INN) for reimbursement in Bulgaria. Over the course of 2 years (2013-14), thirty-three new INNs were approved for reimbursement. In December 2015, a new HTA body was introduced, and assigned to the National Centre for Public Health and Analyses. Although Bulgaria has current legislation on pricing and reimbursement which is in accordance with the EU rules, there is no mechanism for reporting and monitoring these processes or the financial resources annually, so as to provide an overall objective assessment and analysis by year. Therefore, this financial assessment should become a national policy objective for the future.

First-principles study of Mg incorporation at wurtzite InN (0 0 0 1) and (0001-bar) surfaces

International Nuclear Information System (INIS)

Ding, S.F.; Qu, X.P.; Fan, G.H.

2009-01-01

In this article we investigate the energetics of Mg adsorption and incorporation at the InN(0 0 0 1) and InN(0001-bar) surfaces by the method of total energy plane-wave expansions with ultra-soft pseudo potential technology based on the density functional theory (DFT) in the generalized approximation (GGA). It is found that for a 1/4 monolayer (ML) coverage of the InN(0 0 0 1) surface, Mg atoms preferentially adsorb at the bridge sites and T4 sites, but they are unstable when compared with Mg incorporated in the first three layers. For a 1/4 ML coverage of the InN(0001-bar) surface, Mg atoms preferentially adsorb at the H3 sites with the formation energy of -3.49 (eV/(2x2) supercell), which is lower than that of the T4 sites, and the formation energy increases with increasing magnesium coverage. Further study shows that the formation energy for Mg atom is lower than that of In atom, which indicates that magnesium adsorption is more favorable in these conditions.

R&W Club Frederick Raises $1,500 for The Children’s Inn at Annual Golf Tournament | Poster

Science.gov (United States)

Forty-four government and contractor employees, along with their friends and family members, took to the Maryland National Golf Club course this fall for a cause. The R&W Club Frederick held its third annual golf tournament at the Middletown, Md., golf course on Sept. 14 to raise funds for The Children’s Inn at NIH, which celebrated its 25th anniversary this year. The Inn

"Could I return to my life?" Integrated Narrative Nursing Model in Education (INNE).

Science.gov (United States)

Artioli, Giovanna; Foà, Chiara; Cosentino, Chiara; Sulla, Francesco; Sollami, Alfonso; Taffurelli, Chiara

2018-03-28

The Integrated Narrative Nursing Model (INNM) is an approach that integrates the qualitative methodology typical of the human sciences, with the quantitative methodology more often associated with the natural sciences. This complex model, which combines a focus on narrative with quantitative measures, has recently been effectively applied to the assessment of chronic patients. In this study, the model is applied to the planning phase of education (Integrated Narrative Nursing Education, INNE), and proves to be a valid instrument for the promotion of the current educational paradigm that is centered on the engagement of both the patient and the caregiver in their own path of care. The aim of this study is therefore to describe the nurse's strategy in the planning of an educational intervention by using the INNE model. The case of a 70-year-old woman with pulmonary neoplasm is described at her first admission to Hospice. Each step conducted by the reference nurse, who uses INNE to record the nurse-patient narrative and collect subsequent questionnaires in order to create a shared educational plan, is also described. The information collected was submitted, starting from a grounded methodology to the following four levels of analysis: I. Needs Assessment, II. Narrative Diagnosis, III. Quantitative Outcome, IV. Integrated Outcome. Step IV, which is derived from the integration of all levels of analysis, allows a nurse to define, even graphically, the conceptual map of a patient's needs, resources and perspectives, in a completely tailored manner. The INNE model offers a valid methodological support for the professional who intends to educate the patient through an inter-subjective and engaged pathway, between the professional, their patient and the socio-relational context. It is a matter of adopting a complex vision that combines processes and methods that require a steady scientific basis and advanced methodological expertise with active listening and empathy

Understanding and optimization of InN and high indium containing InGaN alloys by metal organic chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Tuna, Oecal

2013-07-18

Among the III-nitride semiconductors (Ga,Al,In)N, InN is the most attractive one due to having the narrowest bandgap of 0.64 eV. The revision in the bandgap of InN makes the InGaN more important since one can cover the whole solar spectrum by only changing In composition in an InGaN layer. The comparison of quality of InN and InGaN layers grown using a metal organic chemical vapor deposition (MOCVD) and a molecular beam epitaxy (MBE) methods indicate that growth with MOCVD is the more challenging, again due to the high dissociation temperature of NH{sub 3} relative to the low decomposition temperature of InN (560-570 C). However, there is significant interest in developing an MOCVD process for InN and InGaN growth since MOCVD technology is the technology currently in use for commercial fabrication of group III nitride thin films. This thesis is therefore focused on a study of MOCVD growth of n- and p-type InN and In-rich InGaN films with the goal of providing new information on the influence of growth conditions on the film properties. Initially, a detailed investigation of MOCVD of InN is given. It is shown that MOCVD growth parameters (growth temperature and V/III ratio) have impacts on the layer properties such as In droplet formation on the surface as well as on its electrical and optical properties. PAS is employed for point defect analyzation. It is shown that In vacancies isolated by nitrogen vacancies are the dominant vacancy-type positron traps in InN. A decrease in the N vacancy concentration in InN is observed as a result of the growth temperature increase from 500 to 550 C. This is an indication of a reduction of N vacancy concentration by enhancing NH{sub 3} dissociation at high growth temperature. Results obtained from optical techniques (Raman and PL) are used to estimate the free carrier concentrations in InN. Electrical characterizations are also carried out using Hall measurements. Carrier concentration values obtained by these three techniques

Understanding and optimization of InN and high indium containing InGaN alloys by metal organic chemical vapor deposition

International Nuclear Information System (INIS)

Tuna, Oecal

2013-01-01

Among the III-nitride semiconductors (Ga,Al,In)N, InN is the most attractive one due to having the narrowest bandgap of 0.64 eV. The revision in the bandgap of InN makes the InGaN more important since one can cover the whole solar spectrum by only changing In composition in an InGaN layer. The comparison of quality of InN and InGaN layers grown using a metal organic chemical vapor deposition (MOCVD) and a molecular beam epitaxy (MBE) methods indicate that growth with MOCVD is the more challenging, again due to the high dissociation temperature of NH 3 relative to the low decomposition temperature of InN (560-570 C). However, there is significant interest in developing an MOCVD process for InN and InGaN growth since MOCVD technology is the technology currently in use for commercial fabrication of group III nitride thin films. This thesis is therefore focused on a study of MOCVD growth of n- and p-type InN and In-rich InGaN films with the goal of providing new information on the influence of growth conditions on the film properties. Initially, a detailed investigation of MOCVD of InN is given. It is shown that MOCVD growth parameters (growth temperature and V/III ratio) have impacts on the layer properties such as In droplet formation on the surface as well as on its electrical and optical properties. PAS is employed for point defect analyzation. It is shown that In vacancies isolated by nitrogen vacancies are the dominant vacancy-type positron traps in InN. A decrease in the N vacancy concentration in InN is observed as a result of the growth temperature increase from 500 to 550 C. This is an indication of a reduction of N vacancy concentration by enhancing NH 3 dissociation at high growth temperature. Results obtained from optical techniques (Raman and PL) are used to estimate the free carrier concentrations in InN. Electrical characterizations are also carried out using Hall measurements. Carrier concentration values obtained by these three techniques revealed a

Observation of complete oxidation of InN to In2O3 in air at elevated temperatures by using X-ray photoemission spectroscopy

International Nuclear Information System (INIS)

Lee, Ik-Jae; Yu, Chung-Jong; Hur, Tae-Bong; Kim, Hyung-Kook; Kim, Chae-Ok; Kim, Jae-Yong

2006-01-01

We present here an X-ray photoemission spectroscopy (XPS) analysis of a polycrystalline InN film on sapphire. The InN was completely oxidized to bixbyite in air after annealing at high temperatures. The analysis of the X-ray diffraction data demonstrated that the oxidation process started around 450 .deg. C. The high-resolution XPS data showed the In3d peaks and the N1s main peak located near 396.4 eV for the InN films. After oxidation, the N1s peak had completely disappeared while the In3d peaks had not changed. These results strongly indicate that the oxidation transformed the structure of InN film to In 2 O 3 .

High temperature electron cyclotron resonance etching of GaN, InN, and AlN

International Nuclear Information System (INIS)

Shul, R.J.; Kilcoyne, S.P.; Hagerott Crawford, M.; Parmeter, J.E.; Vartuli, C.B.; Abernathy, C.R.; Pearton, S.J.

1995-01-01

Electron cyclotron resonance etch rates for GaN, InN, and AlN are reported as a function of temperature for Cl 2 /H 2 /CH 4 /Ar and Cl 2 /H 2 /Ar plasmas. Using Cl 2 /H 2 /CH 4 /Ar plasma chemistry, GaN etch rates remain relatively constant from 30 to 125 degree C and then increase to a maximum of 2340 A/min at 170 degree C. The InN etch rate decreases monotonically from 30 to 150 degree C and then rapidly increases to a maximum of 2300 A/min at 170 degree C. This is the highest etch rate reported for this material. The AlN etch rate decreases throughout the temperature range studied with a maximum of 960 A/min at 30 degree C. When CH 4 is removed from the plasma chemistry, the GaN and InN etch rates are slightly lower, with less dramatic changes with temperature. The surface composition of the III--V nitrides remains unchanged after exposure to the Cl 2 /H 2 /CH 4 /Ar plasma over the temperatures studied

Surface acoustic waves and elastic constants of InN epilayers determined by Brillouin scattering

Energy Technology Data Exchange (ETDEWEB)

Jimenez-Rioboo, R.J.; Prieto, C. [Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, Madrid (Spain); Cusco, R.; Domenech-Amador, N.; Artus, L. [Institut Jaume Almera, Consell Superior d' Investigacions Cientifiques (CSIC), Lluis Sole i Sabaris s.n., Barcelona, Catalonia (Spain); Yamaguchi, T.; Nanishi, Y. [Faculty of Science and Engineering, Ritsumeikan University, Noji-Higashi, Kusatsu, Shiga (Japan)

2012-06-15

The surface acoustic wave velocity in InN has been experimentally determined by means of Brillouin scattering experiments on c - and m -face epilayers. From simulations based on the Green's function formalism we determine the shear elastic constants c{sub 66} and c{sub 44} and propose a complete set of elastic constants for wurtzite InN. The analysis of the sagittal and azimuthal dependence of the surface acoustic wave velocity indicates a slightly different elastic behavior of the m -face sample that basically affects the c{sub 44} elastic constant. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Formation of InN atomic-size wires by simple N adsorption on the In/Si(111)–(4 × 1) surface

International Nuclear Information System (INIS)

Guerrero-Sánchez, J.; Takeuchi, Noboru

2016-01-01

Highlights: • N atoms on the surface form bonds with two In atoms and one Si atom. • Surface formation energy calculations show two stable structures with formation of InN atomic-size wires. • Projected density of states shows a tendency to form In−N and Si−N bonds on the surface. • Charge density corroborates the covalent character of the In−N bonds. - Abstract: We have carried out first principles total energy calculations to study the formation of InN atomic-size wires on the In/Si(111)–(4 × 1) surface. In its most favorable adsorption site, a single N atom forms InN arrangements. The deposit of 0.25 monolayers (MLs) of N atoms, result in the breaking of one of the original In chains and the formation of an InN atomic size wire. Increasing the coverage up to 0.5 ML of N atoms results in the formation of two of those wires. Calculated surface formation energies show that for N-poor conditions the most stable configuration is the original In/Si(111)–(4 × 1) surface with no N atoms. Increasing the N content, and in a reduced range of chemical potential, the formation of an InN wire is energetically favorable. Instead, from intermediate to N-rich conditions, two InN atomic wires are more stable. Projected density of states calculations have shown a trend to form covalent bonds between the In−p and N−p orbitals in these stable models.

The structural evolution of InN nanorods to microstructures on Si (111) by molecular beam epitaxy

International Nuclear Information System (INIS)

Anyebe, E A; Zhuang, Q; Kesaria, M; Krier, A

2014-01-01

We report the catalyst free growth of wurtzite InN nanorods (NRs) and microislands on bare Si (111) by plasma-assisted molecular beam epitaxy at various temperatures. The morphological evolution from NRs to three dimensional (3D) islands as a function of growth temperature is investigated. A combination of tapered, non-tapered, and pyramidal InN NRs are observed at 490 °C, whereas the InN evolves to faceted microislands with an increase in growth temperature to 540 °C and further developed to indented and smooth hemispherical structures at extremely high temperatures (630 °C). The evolution from NRs to microislands with increase in growth temperature is attributed to the lowering of the surface free energy of the growing crystals with disproportionate growth velocities along different growth fronts. The preferential adsorption of In atoms on the (0001) c-plane and (10-10) m-plane promotes the growth of NRs at relatively low growth temperature and 3D microislands at higher temperatures. The growth rate imbalance along different planes facilitates the development of facets on 3D microislands. A strong correlation between the morphological and structural properties of the 3D films is established. XRD studies reveal that the NRs and the faceted microislands are crystalline, whereas the hemispherical microislands grown at extremely high growth temperature contain In adlayers. Finally, photoluminescent emissions were observed at ∼0.75 eV from the InN NRs. (paper)

MASH TEST NO. 3-10 OF A NON-PROPRIETARY, HIGH-TENSION CABLE MEDIAN BARRIER FOR USE IN 6H:1V V-DITCH (TEST NO. MWP-8)

Science.gov (United States)

2017-05-10

The Midwest States Pooled Fund Program has been developing a prototype design for a non-proprietary, high-tension cable median barrier for use in a 6H:1V V-ditch. This system incorporates four evenly spaced cables, Midwest Weak Posts (MWP) spaced at ...

Systematic study on dynamic atomic layer epitaxy of InN on/in +c-GaN matrix and fabrication of fine-structure InN/GaN quantum wells: Role of high growth temperature

Science.gov (United States)

Yoshikawa, Akihiko; Kusakabe, Kazuhide; Hashimoto, Naoki; Hwang, Eun-Sook; Imai, Daichi; Itoi, Takaomi

2016-12-01

The growth kinetics and properties of nominally 1-ML (monolayer)-thick InN wells on/in +c-GaN matrix fabricated using dynamic atomic layer epitaxy (D-ALEp) by plasma-assisted molecular beam epitaxy were systematically studied, with particular attention given to the effects of growth temperature. Attention was also given to how and where the ˜1-ML-thick InN layers were frozen or embedded on/in the +c-GaN matrix. The D-ALEp of InN on GaN was a two-stage process; in the 1st stage, an "In+N" bilayer/monolayer was formed on the GaN surface, while in the 2nd, this was capped by a GaN barrier layer. Each process was monitored in-situ using spectroscopic ellipsometry. The target growth temperature was above 620 °C and much higher than the upper critical epitaxy temperature of InN (˜500 °C). The "In+N" bilayer/monolayer tended to be an incommensurate phase, and the growth of InN layers was possible only when they were capped with a GaN layer. The InN layers could be coherently inserted into the GaN matrix under self-organizing and self-limiting epitaxy modes. The growth temperature was the most dominant growth parameter on both the growth process and the structure of the InN layers. Reflecting the inherent growth behavior of D-ALEp grown InN on/in +c-GaN at high growth temperature, the embedded InN layers in the GaN matrix were basically not full-ML in coverage, and the thickness of sheet-island-like InN layers was essentially either 1-ML or 2-ML. It was found that these InN layers tended to be frozen at the step edges on the GaN and around screw-type threading dislocations. The InN wells formed type-I band line-up heterostructures with GaN barriers, with exciton localization energies of about 300 and 500 meV at 15 K for the 1-ML and 2-ML InN wells, respectively.

Structural and nanomechanical properties of InN films grown on Si(1 0 0) by femtosecond pulsed laser deposition

International Nuclear Information System (INIS)

Hafez, M A; Mamun, M A; Elmustafa, A A; Elsayed-Ali, H E

2013-01-01

The structural and nanomechanical properties of InN films grown on Si(1 0 0) using femtosecond pulsed laser deposition were studied for different growth conditions. Atomic nitrogen was generated by either thermal cracking or laser-induced breakdown (LIB) of ammonia. Optical emission spectroscopy was conducted on the laser plasma and used to observe atomic nitrogen formation. An indium buffer layer was initially grown on the Si substrate at low temperature. The surface structure and morphology were investigated by in situ reflection high-energy electron diffraction, ex situ atomic force microscopy and x-ray diffraction (XRD). The results show that the initial buffer indium layers were terminated with the In(2 × 1) structure and had a smooth surface. With increased coverage, the growth mode developed from two-dimensional layers to three-dimensional islands. At room temperature (RT), formation of submicrometre islands resulted in mixed crystal structure of In and InN. As the substrate temperature was increased to 250–350 °C, the crystal structure was found to be dominated by fewer In and more InN, with only InN formed at 350 °C. The XRD patterns show that the grown InN films have wurtzite crystal structure. The film hardness near the surface was observed to increase from less than 1 GPa, characteristic of In for the sample grown at RT using the thermal cracker, to a hardness of 11 GPa at 30 nm from surface, characteristic of InN for samples grown at 350 °C by LIB. The hardness at deep indents reaches the hardness of the Si substrate of ∼12 GPa. (paper)

X-ray diffraction study of A- plane non-polar InN epilayer grown by MOCVD

Science.gov (United States)

Moret, Matthieu; Briot, Olivier; Gil, Bernard

2015-03-01

Strong polarisation-induced electric fields in C-plane oriented nitrides semiconductor layers reduce the performance of devices. Eliminating the polarization fields can be achieved by growing nitrides along non polar direction. We have grown non polar A-plane oriented InN on R-plane (1‾102) nitridated sapphire substrate by MOCVD. We have studied the structural anisotropy observed in these layers by analyzing High Resolution XRay Diffraction rocking curve (RC) experiments as a function of the in-plane beam orientation. A-plane InN epilayer have a unique epitaxial relationship on R-Plane sapphire and show a strong structural anisotropy. Full width at half maximum (FWHM) of the InN(11‾20) XRD RC values are contained between 44 and 81 Arcmin. FWHM is smaller when the diffraction occurs along the [0001] and the largest FWHM values, of the (11‾20) RC, are obtained when the diffraction occurs along the [1‾100] in-plane direction. Atomic Force Microscopy imaging revealed morphologies with well organized crystallites. The grains are structured along a unique crystallographic orientation of InN, leading to larger domains in this direction. This structural anisotropy can be, in first approximation, attributed to the difference in the domain sizes observed. XRD reciprocal space mappings (RSM) were performed in asymmetrical configuration on (13‾40) and (2‾202) diffraction plane. RSM are measured with a beam orientation corresponding to a maximal and a minimal width of the (11‾20) Rocking curves, respectively. A simple theoretical model is exposed to interpret the RSM. We concluded that the dominant contribution to the anisotropy is due to the scattering coherence length anisotropy present in our samples.

A Sub-ppm Acetone Gas Sensor for Diabetes Detection Using 10 nm Thick Ultrathin InN FETs

Science.gov (United States)

Kao, Kun-Wei; Hsu, Ming-Che; Chang, Yuh-Hwa; Gwo, Shangjr; Yeh, J. Andrew

2012-01-01

An indium nitride (InN) gas sensor of 10 nm in thickness has achieved detection limit of 0.4 ppm acetone. The sensor has a size of 1 mm by 2.5 mm, while its sensing area is 0.25 mm by 2 mm. Detection of such a low acetone concentration in exhaled breath could enable early diagnosis of diabetes for portable physiological applications. The ultrathin InN epilayer extensively enhances sensing sensitivity due to its strong electron accumulation on roughly 5–10 nm deep layers from the surface. Platinum as catalyst can increase output current signals by 2.5-fold (94 vs. 37.5 μA) as well as reduce response time by 8.4-fold (150 vs. 1,260 s) in comparison with bare InN. More, the effect of 3% oxygen consumption due to breath inhalation and exhalation on 2.4 ppm acetone gas detection was investigated, indicating that such an acetone concentration can be analyzed in air. PMID:22969342

The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD

International Nuclear Information System (INIS)

Wang, H; Jiang, D S; Zhu, J J; Zhao, D G; Liu, Z S; Wang, Y T; Zhang, S M; Yang, H

2009-01-01

The effects of growth temperature and V/III ratio on the InN initial nucleation of islands on the GaN (0 0 0 1) surface were investigated. It is found that InN nuclei density increases with decreasing growth temperature between 375 and 525 °C. At lower growth temperatures, InN thin films take the form of small and closely packed islands with diameters of less than 100 nm, whereas at elevated temperatures the InN islands can grow larger and well separated, approaching an equilibrium hexagonal shape due to enhanced surface diffusion of adatoms. At a given growth temperature of 500 °C, a controllable density and size of separated InN islands can be achieved by adjusting the V/III ratio. The larger islands lead to fewer defects when they are coalesced. Comparatively, the electrical properties of the films grown under higher V/III ratio are improved

Conservation of the Sinclair Inn Museum, and the Painted Room Annapolis Royal, Nova Scotia, Canada

Science.gov (United States)

Shaftel, A.; Ward, J.

2017-08-01

Conservation of the historic 18thC. Sinclair Inn Museum, and of the recently discovered late 18th/early 19thC. unique panoramic wall paintings located in an upstairs room, are co-dependent. This project was carried out with Canadian Conservation Institute (CCI) staff, and Conservator in Private Practice Ann Shaftel. This paper will introduce the Sinclair Inn Museum, outline the CCI murals and building investigations of 2011-15, the mural investigation of 2015-16, which confirmed that the mural extended to all four walls of the function room, now referred to as the Painted Room, and to describe how it has been revealed and conserved to date.

Auger recombination as the dominant nonradiative recombination channel in InN

NARCIS (Netherlands)

Cho, Y.; Lue, X.; Wienold, M.; Ramsteiner, M.; Grahn, H.T.; Brandt, O.

2013-01-01

We investigate the dependence of the photoluminescence intensity of degenerately doped (6×10 17 -to1×10 20 -cm -3 ) InN films on their threading dislocation density and background doping level. The photoluminescence intensity is found to be not determined by the structural quality of the film but by

Golf Tournament Drives in a Win for the Children’s Inn | Poster

Science.gov (United States)

By Carolynne Keenan, Contributing Writer On September 23, golfers took to the Clustered Spires golf course in Frederick, Md., for a cause. The R&W Club Frederick hosted its inaugural golf tournament, with proceeds benefiting the National Institutes of Health (NIH) Children’s Inn.

Optical characterization of free electron concentration in heteroepitaxial InN layers using Fourier transform infrared spectroscopy and a 2 × 2 transfer-matrix algebra

International Nuclear Information System (INIS)

Katsidis, C. C.; Ajagunna, A. O.; Georgakilas, A.

2013-01-01

Fourier Transform Infrared (FTIR) reflectance spectroscopy has been implemented as a non-destructive, non-invasive, tool for the optical characterization of a set of c-plane InN single heteroepitaxial layers spanning a wide range of thicknesses (30–2000 nm). The c-plane (0001) InN epilayers were grown by plasma-assisted molecular beam epitaxy (PAMBE) on GaN(0001) buffer layers which had been grown on Al 2 O 3 (0001) substrates. It is shown that for arbitrary multilayers with homogeneous anisotropic layers having their principal axes coincident with the laboratory coordinates, a 2 × 2 matrix algebra based on a general transfer-matrix method (GTMM) is adequate to interpret their optical response. Analysis of optical reflectance in the far and mid infrared spectral range has been found capable to discriminate between the bulk, the surface and interface contributions of free carriers in the InN epilayers revealing the existence of electron accumulation layers with carrier concentrations in mid 10 19 cm −3 at both the InN surface and the InN/GaN interface. The spectra could be fitted with a three-layer model, determining the different electron concentration and mobility values of the bulk and of the surface and the interface electron accumulation layers in the InN films. The variation of these values with increasing InN thickness could be also sensitively detected by the optical measurements. The comparison between the optically determined drift mobility and the Hall mobility of the thickest sample reveals a value of r H = 1.49 for the Hall factor of InN at a carrier concentration of 1.11 × 10 19 cm −3 at 300°Κ.

Effects of GaN capping on the structural and the optical properties of InN nanostructures grown by using MOCVD

International Nuclear Information System (INIS)

Sun, Yuanping; Cho, Yonghoon; Wang, Hui; Wang, Lili; Zhang, Shuming; Yang, Hui

2010-01-01

InN nanostructures with and without GaN capping layers were grown by using metal-organic chemical vapor deposition. Morphological, structural, and optical properties were systematically studied by using atomic force microscopy, X-ray diffraction (XRD) and temperature-dependent photoluminescence (PL). XRD results show that an InGaN structure is formed for the sample with a GaN capping layer, which will reduce the quality and the IR PL emission of the InN. The lower emission peak at ∼0.7 eV was theoretically fitted and assigned as the band edge emission of InN. Temperature-dependent PL shows a good quantum efficiency for the sample without a GaN capping layers; this corresponds to a lower density of dislocations and a small activation energy.

Vertically integrated (Ga, In)N nanostructures for future single photon emitters operating in the telecommunication wavelength range

International Nuclear Information System (INIS)

Winden, A; Mikulics, M; Grützmacher, D; Hardtdegen, H

2013-01-01

Important technological steps are discussed and realized for future room-temperature operation of III-nitride single photon emitters. First, the growth technology of positioned single pyramidal InN nanostructures capped by Mg-doped GaN is presented. The optimization of their optical characteristics towards narrowband emission in the telecommunication wavelength range is demonstrated. In addition, a device concept and technology was developed so that the nanostructures became singularly addressable. It was found that the nanopyramids emit in the telecommunication wavelength range if their size is chosen appropriately. A p-GaN contacting layer was successfully produced as a cap to the InN pyramids and the top p-contact was achievable using an intrinsically conductive polymer PEDOT:PSS, allowing a 25% increase in light transmittance compared to standard Ni/Au contact technology. Single nanopyramids were successfully integrated into a high-frequency device layout. These decisive technology steps provide a promising route to electrically driven and room-temperature operating InN based single photon emitters in the telecommunication wavelength range. (paper)

Growth kinetics and structural perfection of (InN)_1/(GaN)_1_–_2_0 short-period superlattices on +c-GaN template in dynamic atomic layer epitaxy

International Nuclear Information System (INIS)

Kusakabe, Kazuhide; Hashimoto, Naoki; Wang, Ke; Imai, Daichi; Itoi, Takaomi; Yoshikawa, Akihiko

2016-01-01

The growth kinetics and structural perfection of (InN)_1/(GaN)_1_–_2_0 short-period superlattices (SPSs) were investigated with their application to ordered alloys in mind. The SPSs were grown on +c-GaN template at 650 °C by dynamic atomic layer epitaxy in conventional plasma-assisted molecular beam epitaxy. It was found that coherent structured InN/GaN SPSs could be fabricated when the thickness of the GaN barrier was 4 ML or above. Below 3 ML, the formation of SPSs was quite difficult owing to the increased strain in the SPS structure caused by the use of GaN as a template. The effective or average In composition of the (InN)_1/(GaN)_4 SPSs was around 10%, and the corresponding InN coverage in the ∼1 ML-thick InN wells was 50%. It was found that the effective InN coverage in ∼1 ML-thick InN wells could be varied with the growth conditions. In fact, the effective In composition could be increased up to 13.5%, i.e., the corresponding effective InN coverage was about 68%, by improving the capping/freezing speed by increasing the growth rate of the GaN barrier layer.

Quasi-two-dimensional superconductivity in wurtzite-structured InN films

International Nuclear Information System (INIS)

Ling, D.C.; Cheng, J.H.; Lo, Y.Y.; Du, C.H.; Chiu, A.P.; Chang, P.H.; Chang, C.A.

2007-01-01

C-axis oriented InN films with wurtzite structure were grown on sapphire(0001) substrate by MOCVD method. Superconductivity with transition onset temperature T c,onset around 3.5 K has been characterized by magnetotransport measurements in fields up to 9 Tesla for films with carrier concentration in the range of 1 x 10 19 cm -3 to 7 x 10 20 cm -3 . Among them, the film with a nitridation buffer layer has the highest zero-resistance temperature T c0 of 2 K. The normal-state magnetoresistance follows Kohler's rule ΔR/R∝(H/R) 2 , indicating that there is a single species of charge carrier with single scattering time at all points on the Fermi surface. The extrapolated value of zero-temperature upper critical field H c2 ab (0) and H c2 c (0) is estimated to be 5900 G and 2800 G, respectively, giving rise to the anisotropy parameter γ about 2.1. The angular dependence of the upper critical field is in good agreement with the behavior predicted by Lawrence-Doniach model in the two-dimensional (2D) limit strongly suggesting that the InN film is a quasi-2D superconductor. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

PLAN DE MARKETING PARA EL HOTEL CARRIZAL INN

OpenAIRE

Ángel Guillermo Félix Mendoza; Danny Daniel Cobeña López; Lisbeth Alexandra Párraga Muñoz; Lorena Carreño Mendoza

2015-01-01

El objetivo principal de esta investigación fue la elaboración de un plan de marketing para el Hotel Carrizal Inn ubicado en la ciudad de Calceta, provincia de Manabí, Ecuador. Se estructuraron tres fases metodológicas, el diagnóstico situacional, estudio de mercado y plan turístico. En la primera fase se delimitó el área de estudio; además se efectuó un análisis interno y externo, utilizando matrices de diagnóstico como la evaluación de factores internos y externos, matriz de competidores...

Network of vertically c-oriented prismatic InN nanowalls grown on c-GaN/sapphire template by chemical vapor deposition technique

Science.gov (United States)

Barick, B. K.; Saroj, Rajendra Kumar; Prasad, Nivedita; Sutar, D. S.; Dhar, S.

2018-05-01

Networks of vertically c-oriented prism shaped InN nanowalls, are grown on c-GaN/sapphire templates using a CVD technique, where pure indium and ammonia are used as metal and nitrogen precursors. A systematic study of the growth, structural and electronic properties of these samples shows a preferential growth of the islands along [ 1 1 2 bar 0 ] and [0 0 0 1] directions leading to the formation of such a network structure, where the vertically [0 0 0 1] oriented tapered walls are laterally align along one of the three [ 1 1 2 bar 0 ] directions. Inclined facets of these walls are identified as semipolar (1 1 2 bar 2) -planes of wurtzite InN. Onset of absorption for these samples is observed to be higher than the band gap of InN suggesting a high background carrier concentration in this material. Study of the valence band edge through XPS indicates the formation of positive depletion regions below the surface of the side facets [(1 1 2 bar 2) -planes] of the walls. This is in contrast with the observation for c-plane InN epilayers, where electron accumulation is often reported below the top surface.

2nd INNS Conference on Big Data

CERN Document Server

Manolopoulos, Yannis; Iliadis, Lazaros; Roy, Asim; Vellasco, Marley

2017-01-01

The book offers a timely snapshot of neural network technologies as a significant component of big data analytics platforms. It promotes new advances and research directions in efficient and innovative algorithmic approaches to analyzing big data (e.g. deep networks, nature-inspired and brain-inspired algorithms); implementations on different computing platforms (e.g. neuromorphic, graphics processing units (GPUs), clouds, clusters); and big data analytics applications to solve real-world problems (e.g. weather prediction, transportation, energy management). The book, which reports on the second edition of the INNS Conference on Big Data, held on October 23–25, 2016, in Thessaloniki, Greece, depicts an interesting collaborative adventure of neural networks with big data and other learning technologies.

Does educational intervention improve doctors’ knowledge and perceptions of generic medicines and their generic prescribing rate? A study from Malaysia

Science.gov (United States)

Wong, Zhi Yen; Alrasheedy, Alian A.; Saleem, Fahad; Mohamad Yahaya, Abdul Haniff; Aljadhey, Hisham

2014-01-01

Objectives: To investigate the impact of an educational intervention on doctors’ knowledge and perceptions towards generic medicines and their generic (international non-proprietary name) prescribing practice. Methods: This is a single-cohort pre-/post-intervention pilot study. The study was conducted in a tertiary care hospital in Perak, Malaysia. All doctors from the internal medicine department were invited to participate in the educational intervention. The intervention consisted of an interactive lecture, an educational booklet and a drug list. Doctors’ knowledge and perceptions were assessed by using a validated questionnaire, while the international non-proprietary name prescribing practice was assessed by screening the prescription before and after the intervention. Results: The intervention was effective in improving doctors’ knowledge towards bioequivalence, similarity of generic medicines and safety standards required for generic medicine registration (p = 0.034, p = 0.034 and p = 0.022, respectively). In terms of perceptions towards generic medicines, no significant changes were noted (p > 0.05). Similarly, no impact on international non-proprietary name prescribing practice was observed after the intervention (p > 0.05). Conclusion: Doctors had inadequate knowledge and misconceptions about generic medicines before the intervention. Moreover, international non-proprietary name prescribing was not a common practice. However, the educational intervention was only effective in improving doctors’ knowledge of generic medicines. PMID:26770747

In-situ cyclic pulse annealing of InN on AlN/Si during IR-lamp-heated MBE growth

Science.gov (United States)

Suzuki, Akira; Bungi, Yu; Araki, Tsutomu; Nanishi, Yasushi; Mori, Yasuaki; Yamamoto, Hiroaki; Harima, Hiroshi

2009-05-01

To improve crystal quality of InN, an in-situ cyclic rapid pulse annealing during growth was carried out using infrared-lamp-heated molecular beam epitaxy. A cycle of 4 min growth of InN at 400 °C and 3 s pulse annealing at a higher temperature was repeated 15 times on AlN on Si substrate. Annealing temperatures were 550, 590, 620, and 660 °C. The back of Si was directly heated by lamp irradiation through a quartz rod. A total InN film thickness was about 200 nm. With increasing annealing temperature up to 620 °C, crystal grain size by scanning electron microscope showed a tendency to increase, while widths of X-ray diffraction rocking curve of (0 0 0 2) reflection and E 2 (high) mode peak of Raman scattering spectra decreased. A peak of In (1 0 1) appeared in X-ray diffraction by annealing higher than 590 °C, and In droplets were found on the surface by annealing at 660 °C.

Minibaaritoiminnan kehittäminen Holiday Inn Helsinki-Vantaa Airportissa

OpenAIRE

Raunio, Reijo

2009-01-01

Tämä tutkimustyyppinen opinnäytetyö käsittelee Restel Oy:n operoiman Holiday Inn Helsinki-Vantaa Airportin minibaaritoiminnan kehittämistä. Työn on tarkoitus toimia hotellin johdon apuvälineenä pohdittaessa toimenpiteitä, joilla voitaisiin tehostaa minibaaritoiminnan tuottoja ja parantaa sen kannattavuutta. Koska kannattavuuden käsitteen avaamiselle syntyy näin ollen olennainen tarve, se saa pääroolin viitekehyksessä. Kannattavuuden osalta käsitellään paitsi sen yleistä määrittelyä myös ...

Strong band edge luminescence from InN films grown on Si substrates by electron cyclotron resonance-assisted molecular beam epitaxy

International Nuclear Information System (INIS)

Yodo, Tokuo; Yona, Hiroaki; Ando, Hironori; Nosei, Daiki; Harada, Yoshiyuki

2002-01-01

We observed strong band edge luminescence at 8.5-200 K from 200-880 nm thick InN films grown on 10 nm thick InN buffer layers on Si(001) and Si(111) substrates by electron cyclotron resonance-assisted molecular beam epitaxy. The InN film on the Si(001) substrate exhibited strong band edge photoluminescence (PL) emission at 1.814 eV at 8.5 K, tentatively assigned as donor to acceptor pair [DAP (α-InN)] emission from wurtzite-InN (α-InN) crystal grains, while those on Si(111) showed other stronger band edge PL emissions at 1.880, 2.081 and 2.156 eV, tentatively assigned as donor bound exciton [D 0 X(α-InN)] from α-InN grains, DAP (β-InN) and D 0 X (β-InN) emissions from zinc blende-InN (β-InN) grains, respectively

Electrical properties of cubic InN and GaN epitaxial layers as a function of temperature

International Nuclear Information System (INIS)

Fernandez, J.R.L.; Chitta, V.A.; Abramof, E.

2000-01-01

Carrier concentration and mobility were measured for intrinsic cubic InN and GaN, and for Si-doped cubic GaN as a function of temperature. Metallic n-type conductivity was found for the InN, while background p-type conductivity was observed for the intrinsic GaN layer. Doping the cubic GaN with Si two regimes were observed. For low Si-doping concentrations, the samples remain p-type. Increasing the Si-doping level, the background acceptors are compensated and the samples became highly degenerated n-type. From the carrier concentration dependence on temperature, the activation energy of the donor and acceptor levels was determined. Attempts were made to determine the scattering mechanisms responsible for the behavior of the mobility as a function of temperature

An Analysis of Open-Ended Online Reviews about Bed and Breakfast and Inns in Portugal

Directory of Open Access Journals (Sweden)

Sara Evans Machado dos Santos

2014-03-01

Full Text Available Researches about User-Generated Content (UGC have gained attention in the fields of Tourism and Hospitality in the last years. This study focus on online reviews about alternative accommodations – B&Bs and Inns. The development of this work was realized applying inductive methods and using an exploratory approach. We collected a sample of 450 online reviews and analyzed them segment by segment, making a total of 4621 segments. We used the Appraisal Theory to assess what attitudes online reviewers are expressing about B&Bs and Inns in Lisbon. We verified that positive appreciation is the most frequent attitude while expressions of affect and judgment are more rare. This study contributes to the academy as it brings a new parameter of analysis of UGC using the Appraisal Theory in the field of Hospitality.

Kinetics of self-assembled InN quantum dots grown on Si (111) by plasma-assisted MBE

International Nuclear Information System (INIS)

Kumar, Mahesh; Roul, Basanta; Bhat, Thirumaleshwara N.; Rajpalke, Mohana K.; Sinha, Neeraj; Kalghatgi, A. T.; Krupanidhi, S. B.

2011-01-01

One of the scientific challenges of growing InN quantum dots (QDs), using Molecular beam epitaxy (MBE), is to understand the fundamental processes that control the morphology and distribution of QDs. A systematic manipulation of the morphology, optical emission, and structural properties of InN/Si (111) QDs is demonstrated by changing the growth kinetics parameters such as flux rate and growth time. Due to the large lattice mismatch, between InN and Si (∼8%), the dots formed from the Strannski–Krastanow (S–K) growth mode are dislocated. Despite the variations in strain (residual) and the shape, both the dot size and pair separation distribution show the scaling behavior. We observed that the distribution of dot sizes, for samples grown under varying conditions, follow the scaling function.

Local lattice environment of indium in GaN, AlN, and InN; Lokale Gitterumgebung von Indium in GaN, AlN und InN

Energy Technology Data Exchange (ETDEWEB)

Penner, J

2007-12-20

After an introduction to the physical properties of the nitrides, their preparation, and the state of studies on the implantation in the nitrides the experimental method (PAC) applied in this thesis and the data analysis are presented. The next chapter describes then the applied materials and the sample preparation. The following chapters contain the PAC measurements on the annealing behaviout of GaN, AlN, and InN after the implantation as well as dose- and temperature dependent PAC studies. Finally the most important results are summarized.

Structural and magnetic properties of Cr and Mn doped InN

International Nuclear Information System (INIS)

Ney, A.; Rajaram, R.; Arenholz, E.; Harris, J.S.; Samant, M.; Farrow, R.F.C.; Parkin, S.S.P.

2006-01-01

We present a detailed magnetic characterization of Cr and Mn doped InN films be means of superconducting quantum interference device magnetometry and X-ray magnetic circular dichroism. The InN:Cr films exhibit ferromagnetic behavior up to 300 K in a doping region from 2% to 8% without detectable phase segregation. The easy axis of magnetization is found to be in the film plane. On the contrary, Mn-doped films show signatures of phase segregation and paramagnetic behavior

Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods

Energy Technology Data Exchange (ETDEWEB)

Nepal, Neeraj [U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375; Anderson, Virginia R. [American Society for Engineering Education, 1818 N Street NW, Washington, DC 20036; Johnson, Scooter D. [U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375; Downey, Brian P. [U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375; Meyer, David J. [U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375; DeMasi, Alexander [Physics Department, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215; Robinson, Zachary R. [Department of Physics, SUNY College at Brockport, 350 New Campus Dr, Brockport, New York 14420; Ludwig, Karl F. [Physics Department, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215; Eddy, Charles R. [U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375

2017-03-13

The temporal evolution of high quality indium nitride (InN) growth by plasma-assisted atomic layer epitaxy (ALEp) on a-plane sapphire at 200 and 248 °C was probed by synchrotron x-ray methods. The growth was carried out in a thin film growth facility installed at beamline X21 of the National Synchrotron Light Source at Brookhaven National Laboratory and at beamline G3 of the Cornell High Energy Synchrotron Source, Cornell University. Measurements of grazing incidence small angle x-ray scattering (GISAXS) during the initial cycles of growth revealed a broadening and scattering near the diffuse specular rod and the development of scattering intensities due to half unit cell thick nucleation islands in the Yoneda wing with correlation length scale of 7.1 and 8.2 nm, at growth temperatures (Tg) of 200 and 248 °C, respectively. At about 1.1 nm (two unit cells) of growth thickness nucleation islands coarsen, grow, and the intensity of correlated scattering peak increased at the correlation length scale of 8.0 and 8.7 nm for Tg = 200 and 248 °C, respectively. The correlated peaks at both growth temperatures can be fitted with a single peak Lorentzian function, which support single mode growth. Post-growth in situ x-ray reflectivity measurements indicate a growth rate of ~0.36 Å/cycle consistent with the growth rate previously reported for self-limited InN growth in a commercial ALEp reactor. Consistent with the in situ GISAXS study, ex situ atomic force microscopy power spectral density measurements also indicate single mode growth. Electrical characterization of the resulting film revealed an electron mobility of 50 cm2/V s for a 5.6 nm thick InN film on a-plane sapphire, which is higher than the previously reported mobility of much thicker InN films grown at higher temperature by molecular beam epitaxy directly on sapphire. These early results indicated that in situ synchrotron x-ray study of the epitaxial growth kinetics of InN films is a very powerful method to

HOUSE DUST MITE CONTAMINATION IN HOTELS AND INNS IN BANDAR ABBAS, SOUTH OF IRAN

Directory of Open Access Journals (Sweden)

M. Soleimani, J. Rafinejad

2008-07-01

Full Text Available House dust mites have been shown to be strongly associated with allergic respiratory diseases such as, bronchial asthma, rhinitis and atopic dermatitis in the world. The climatic conditions of Bandar-Abbas, which is located in a coastal area and has a humid subtropical climate, provide a suitable place to proliferate mites. The aim of this study was to determine the contamination rate and analyze the house dust mite fauna in hotels and inns in Bandar-Abbas that had not been investigated previously. In this study 6 hotels and 6 inns were selected randomly in six areas of Bandar-Abbas. Two dust samples were collected from each place with a vacuum cleaner. One square meter of carpets and mattresses were vacuumed for a period of 1 min. Then the samples were cleared in lactic acid and then mites were mounted in Hoyer's medium for study and identification. A total of 2644 mites were collected and identified. The major mite family was Pyroglyphidae (98%. Dermatophagoides pteronyssinus was the most frequent and most numerous species recorded, occurring in 91% of samples examined and forming 88% of the Pyroglyphidae and 86% of the total mite populations. The family Cheyletidae was less commonly found with Cheyletus malaccensis (2%. Most of the mites were isolated from the carpets (57.5%, and a smaller number from mattresses (42.5%. Mites were present in 96% of the dust samples. Results revealed that all inns and 83% of hotels were contaminated by more than one species of mite and 34% of them had a population of more than 100 mites /g dust. This rate of contamination can be a major risk factor in asthma and other respiratory allergic diseases

High-quality InN films on MgO (100) substrates: The key role of 30° in-plane rotation

International Nuclear Information System (INIS)

Compeán García, V. D.; López Luna, E.; Rodríguez, A. G.; Vidal, M. A.; Orozco Hinostroza, I. E.; Escobosa Echavarría, A.

2014-01-01

High crystalline layers of InN were grown on MgO(100) substrates by gas source molecular beam epitaxy. Good quality films were obtained by means of an in-plane rotation process induced by the annealing of an InN buffer layer to minimize the misfit between InN and MgO. In situ reflection high-energy electron diffraction showed linear streaky patterns along the [011 ¯ 0] azimuth and a superimposed diffraction along the [112 ¯ 0] azimuth, which correspond to a 30° α-InN film rotation. This rotation reduces the mismatch at the MgO/InN interface from 19.5% to less than 3.5%, increasing the structural quality, which was analyzed by high-resolution X-ray diffraction and Raman spectroscopy. Only the (0002) c plane diffraction of α-InN was observed and was centered at 2θ = 31.4°. Raman spectroscopy showed two modes corresponding to the hexagonal phase: E1(LO) at 591 cm −1 and E2(high) at 488 cm −1 . Hall effect measurements showed a carrier density of 9 × 10 18  cm −3 and an electron Hall mobility of 340 cm 2 /(V s) for a film thickness of 140 nm

A trade-off relation between tilt and twist angle fluctuations in InN grown by RF-MBE

International Nuclear Information System (INIS)

Hashimoto, A.; Iwao, K.; Yamamoto, A.

2008-01-01

In the InN growth on sapphire substrates, it is difficult to control both of tilt and twist angle fluctuations at same time. It is necessary to understand initial growth stage such as the role of nitridation process to improve the mosaicity. Low-temperature nitridation technique brings the drastically improvement of the tilt angle fluctuation, although the twist angle fluctuation becomes worse. Such experimental results strongly indicate that there is some trade-off relation between the tilt and the twist angle fluctuations as a function of the nitridation condition such as the nitridation time. In this paper, we discuss about such trade-off relation in the direct growth of InN on the nitridation sapphire substrates and also propose a simple model of initial nitridation process to explain it. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Proposal and achievement of novel structure InN/GaN multiple quantum wells consisting of 1 ML and fractional monolayer InN wells inserted in GaN matrix

International Nuclear Information System (INIS)

Yoshikawa, A.; Che, S. B.; Yamaguchi, W.; Saito, H.; Wang, X. Q.; Ishitani, Y.; Hwang, E. S.

2007-01-01

The authors propose and demonstrate the fabrication of InN/GaN multiple quantum well (MQW) consisting of 1 ML and fractional monolayer InN well insertion in GaN matrix under In-polarity growth regime. Since the critical thickness of InN epitaxy on GaN is about 1 ML and the growth temperature for 1 ML InN insertion can be remarkably higher, the proposed MQW structure can avoid/reduce generation of misfit dislocation, resulting in higher quality MQW-structure nature in principle than former InN-based MQWs. The proposed InN/GaN MQWs are potentially applicable to room temperature operating excitonic devices working in short-wavelength visible colors

Nominal ISOMERs (Incorrect Spellings Of Medicines Eluding Researchers)-variants in the spellings of drug names in PubMed: a database review.

Science.gov (United States)

Ferner, Robin E; Aronson, Jeffrey K

2016-12-14

 To examine how misspellings of drug names could impede searches for published literature.  Database review.  PubMed.  The study included 30 drug names that are commonly misspelt on prescription charts in hospitals in Birmingham, UK (test set), and 30 control names randomly chosen from a hospital formulary (control set). The following definitions were used: standard names-the international non-proprietary names, variant names-deviations in spelling from standard names that are not themselves standard names in English language nomenclature, and hidden reference variants-variant spellings that identified publications in textword (tw) searches of PubMed or other databases, and which were not identified by textword searches for the standard names. Variant names were generated from standard names by applying letter substitutions, omissions, additions, transpositions, duplications, deduplications, and combinations of these. Searches were carried out in PubMed (30 June 2016) for "standard name[tw]" and "variant name[tw] NOT standard name[tw]."  The 30 standard names of drugs in the test set gave 325 979 hits in total, and 160 hidden reference variants gave 3872 hits (1.17%). The standard names of the control set gave 470 064 hits, and 79 hidden reference variants gave 766 hits (0.16%). Letter substitutions (particularly i to y and vice versa) and omissions together accounted for 2924 (74%) of the variants. Amitriptyline (8530 hits) yielded 18 hidden reference variants (179 (2.1%) hits). Names ending in "in," "ine," or "micin" were commonly misspelt. Failing to search for hidden reference variants of "gentamicin," "amitriptyline," "mirtazapine," and "trazodone" would miss at least 19 systematic reviews. A hidden reference variant related to Christmas, "No-el", was rare; variants of "X-miss" were rarer.  When performing searches, researchers should include misspellings of drug names among their search terms. Published by the BMJ Publishing Group Limited. For

Enhanced light scattering of the forbidden longitudinal optical phonon mode studied by micro-Raman spectroscopy on single InN nanowires

International Nuclear Information System (INIS)

Schaefer-Nolte, E O; Stoica, T; Gotschke, T; Limbach, F A; Gruetzmacher, D; Calarco, R; Sutter, E; Sutter, P

2010-01-01

In the literature, there are controversies on the interpretation of the appearance in InN Raman spectra of a strong scattering peak in the energy region of the unscreened longitudinal optical (LO) phonons, although a shift caused by the phonon-plasmon interaction is expected for the high conductance observed in this material. Most measurements on light scattering are performed on ensembles of InN nanowires (NWs). However, it is important to investigate the behavior of individual nanowires and here we report on micro-Raman measurements on single nanowires. When changing the polarization direction of the incident light from parallel to perpendicular to the wire, the expected reduction of the Raman scattering was observed for transversal optical (TO) and E 2 phonon scattering modes, while a strong symmetry-forbidden LO mode was observed independently on the laser polarization direction. Single Mg- and Si-doped crystalline InN nanowires were also investigated. Magnesium doping results in a sharpening of the Raman peaks, while silicon doping leads to an asymmetric broadening of the LO peak. The results can be explained based on the influence of the high electron concentration with a strong contribution of the surface accumulation layer and the associated internal electric field.

Enhanced Light Scattering of the Forbidden longitudinal Optical Phonon Mode Studied by Micro-Raman Spectroscopy on Single InN nanowires

International Nuclear Information System (INIS)

Sutter, E.; Schafer-Nolte, E.O.; Stoica, T.; Gotschke, T.; Limbach, F.A.; Sutter, P.; Grutzmacher, D.; Calarco, R.

2010-01-01

In the literature, there are controversies on the interpretation of the appearance in InN Raman spectra of a strong scattering peak in the energy region of the unscreened longitudinal optical (LO) phonons, although a shift caused by the phonon-plasmon interaction is expected for the high conductance observed in this material. Most measurements on light scattering are performed on ensembles of InN nanowires (NWs). However, it is important to investigate the behavior of individual nanowires and here we report on micro-Raman measurements on single nanowires. When changing the polarization direction of the incident light from parallel to perpendicular to the wire, the expected reduction of the Raman scattering was observed for transversal optical (TO) and E2 phonon scattering modes, while a strong symmetry-forbidden LO mode was observed independently on the laser polarization direction. Single Mg- and Si-doped crystalline InN nanowires were also investigated. Magnesium doping results in a sharpening of the Raman peaks, while silicon doping leads to an asymmetric broadening of the LO peak. The results can be explained based on the influence of the high electron concentration with a strong contribution of the surface accumulation layer and the associated internal electric field.

Enhanced light scattering of the forbidden longitudinal optical phonon mode studied by micro-Raman spectroscopy on single InN nanowires.

Science.gov (United States)

Schäfer-Nolte, E O; Stoica, T; Gotschke, T; Limbach, F A; Sutter, E; Sutter, P; Grützmacher, D; Calarco, R

2010-08-06

In the literature, there are controversies on the interpretation of the appearance in InN Raman spectra of a strong scattering peak in the energy region of the unscreened longitudinal optical (LO) phonons, although a shift caused by the phonon-plasmon interaction is expected for the high conductance observed in this material. Most measurements on light scattering are performed on ensembles of InN nanowires (NWs). However, it is important to investigate the behavior of individual nanowires and here we report on micro-Raman measurements on single nanowires. When changing the polarization direction of the incident light from parallel to perpendicular to the wire, the expected reduction of the Raman scattering was observed for transversal optical (TO) and E(2) phonon scattering modes, while a strong symmetry-forbidden LO mode was observed independently on the laser polarization direction. Single Mg- and Si-doped crystalline InN nanowires were also investigated. Magnesium doping results in a sharpening of the Raman peaks, while silicon doping leads to an asymmetric broadening of the LO peak. The results can be explained based on the influence of the high electron concentration with a strong contribution of the surface accumulation layer and the associated internal electric field.

High-quality InN films on MgO (100) substrates: The key role of 30° in-plane rotation

Energy Technology Data Exchange (ETDEWEB)

Compeán García, V. D.; López Luna, E.; Rodríguez, A. G.; Vidal, M. A. [Coordinación para la Innovación y Aplicación de la Ciencia y Tecnología (CIACyT), Universidad Autónoma de San Luis Potosí (UASLP), Álvaro Obregón 64, 78000 San Luis Potosí (Mexico); Orozco Hinostroza, I. E. [Instituto Potosino de Investigación Científica y Tecnológica, Camino a la Presa San José 2055, Col. Lomas 4a Sección, 78216 San Luis Potosí (Mexico); Escobosa Echavarría, A. [Electric Engineering Department, Centro de Investigación y Estudios Avanzados del IPN, Apartado Postal 14-740, 07000 México D.F. (Mexico)

2014-05-12

High crystalline layers of InN were grown on MgO(100) substrates by gas source molecular beam epitaxy. Good quality films were obtained by means of an in-plane rotation process induced by the annealing of an InN buffer layer to minimize the misfit between InN and MgO. In situ reflection high-energy electron diffraction showed linear streaky patterns along the [011{sup ¯}0] azimuth and a superimposed diffraction along the [112{sup ¯}0] azimuth, which correspond to a 30° α-InN film rotation. This rotation reduces the mismatch at the MgO/InN interface from 19.5% to less than 3.5%, increasing the structural quality, which was analyzed by high-resolution X-ray diffraction and Raman spectroscopy. Only the (0002) c plane diffraction of α-InN was observed and was centered at 2θ = 31.4°. Raman spectroscopy showed two modes corresponding to the hexagonal phase: E1(LO) at 591 cm{sup −1} and E2(high) at 488 cm{sup −1}. Hall effect measurements showed a carrier density of 9 × 10{sup 18} cm{sup −3} and an electron Hall mobility of 340 cm{sup 2}/(V s) for a film thickness of 140 nm.

R&W Club Frederick Hosts Second Annual Golf Tourney for The Children’s Inn | Poster

Science.gov (United States)

By Carolynne Keenan, Contributing Writer On Sept. 8, more than 40 NCI at Frederick and Leidos Biomedical Research employees, along with family and friends, swapped work clothes for golf gear at Maryland National Golf Club in Middletown. The golfers didn’t just play for fun; they participated in the second annual R&W Club Frederick Golf Tournament to support The Children’s Inn

Theoretical investigation on structural stability of InN thin films on 3C-SiC(0 0 1)

International Nuclear Information System (INIS)

Ito, Takumi; Akiyama, Toru; Nakamura, Kohji; Ito, Tomonori

2008-01-01

The structural stability of InN thin films on 3C-SiC(0 0 1) substrate is systematically investigated based on an empirical interatomic potential, which incorporates electrostatic energy due to covalent bond charges and ionic charges. The calculated energy differences among coherently grown 3C-InN(0 0 1), 3C-InN(0 0 1) with misfit dislocations (MDs), and 2H-InN(0 0 0 1) imply that the coherently grown 3C-InN(0 0 1) is stable when the film thickness is less than 7 monolayers (MLs) while 2H-InN(0 0 0 1) is stabilized for the thickness beyond 8 MLs. This is because InN layers in 2H-InN(0 0 0 1) are fully relaxed by one MD. The analysis of atomic configuration at the 3C-InN(0 0 1)/3C-SiC(0 0 1) interfaces reveals that the coordination number of interfacial atoms is quite different from that in the bulk region. Thus, 3C-InN(0 0 1) with MDs on 3C-SiC(0 0 1) is always metastable over entire range of film thickness, consistent with the successful fabrication of 2H-InN(0 0 0 1) on 3C-SiC(0 0 1) by the molecular beam epitaxy. These results suggest that the mismatch in atomic arrangements at the interface crucially affects the structural stability of InN thin films on 3C-SiC(0 0 1) substrate

Local lattice environment of indium in GaN, AlN, and InN

International Nuclear Information System (INIS)

Penner, J.

2007-01-01

After an introduction to the physical properties of the nitrides, their preparation, and the state of studies on the implantation in the nitrides the experimental method (PAC) applied in this thesis and the data analysis are presented. The next chapter describes then the applied materials and the sample preparation. The following chapters contain the PAC measurements on the annealing behaviout of GaN, AlN, and InN after the implantation as well as dose- and temperature dependent PAC studies. Finally the most important results are summarized

Determination of the Mg occupation site in MOCVD- and MBE-grown Mg-doped InN using X-ray absorption fine-structure measurements

Energy Technology Data Exchange (ETDEWEB)

Miyajima, Takao; Uemura, Shigeaki; Kudo, Yoshihiro [Materials Laboratories, Sony Corporation, Atsugi, Kanagawa (Japan); Kitajima, Yoshinori [Photon Factory, High Energy Accelerator Research Organization, Tsukuba, Ibaraki (Japan); Yamamoto, Akio [Graduate School of Engineering, University of Fukui, Fukui (Japan); Muto, Daisuke; Nanishi, Yasushi [Department of Photonics, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577 (Japan)

2008-07-01

We analyzed the atomic structure around Mg atoms in MOCVD- and MBE-grown Mg-doped InN using Mg K-edge X-ray absorption fine-structure (XAFS) measurements. Our experimental data closely fit to the simulated data in which Mg atoms occupy the substitutional sites of In atoms. From this result, we conclude that Mg atoms essentially occupy not N atoms sites but In atoms sites, meaning that Mg atoms can act as acceptors in InN. We believe that observations of p-type conductivity are prevented by problems such as carrier compensation and electron accumulation at the surface. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Valence-band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x-ray photoemission spectroscopy

International Nuclear Information System (INIS)

Martin, G.; Botchkarev, A.; Rockett, A.; Morkoc, H.

1996-01-01

The valence-band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy. A significant forward endash backward asymmetry was observed in the InN/GaN endash GaN/InN and InN/AlN endash AlN/InN heterojunctions. The asymmetry was understood as a piezoelectric strain effect. We report the valence band discontinuities for InN/GaN=1.05±0.25 eV, GaN/AlN=0.70±0.24 eV, and InN/AlN=1.81±0.20 eV, all in the standard type I lineup. These values obey transitivity to within the experimental accuracy. Tables of photoemission core level binding energies are reported for wurtzite GaN, AlN, and InN. copyright 1996 American Institute of Physics

Influences of residual oxygen impurities, cubic indium oxide grains and indium oxy-nitride alloy grains in hexagonal InN crystalline films grown on Si(111) substrates by electron cyclotron resonance plasma-assisted molecular beam epitaxy

International Nuclear Information System (INIS)

Yodo, T.; Nakamura, T.; Kouyama, T.; Harada, Y.

2005-01-01

We investigated the influences of residual oxygen (O) impurities, cubic indium oxide (β-In 2 O 3 ) grains and indium oxy-nitride (InON) alloy grains in 200 nm-thick hexagonal (α)-InN crystalline films grown on Si(111) substrates by electron cyclotron resonance plasma-assisted molecular beam epitaxy. Although β-In 2 O 3 grains with wide band-gap energy were formed in In film by N 2 annealing, they were not easily formed in N 2 -annealed InN films. Even if they were not detected in N 2 -annealed InN films, the as-grown films still contained residual O impurities with concentrations of less than 0.5% ([O]≤0.5%). Although [O]∝1% could be estimated by investigating In 2 O 3 grains formed in N 2 -annealed InN films, [O]≤0.5% could not be measured by it. However, we found that they can be qualitatively measured by investigating In 2 O 3 grains formed by H 2 annealing with higher reactivity with InN and O 2 , using X-ray diffraction and PL spectroscopy. In this paper, we discuss the formation mechanism of InON alloy grains in InN films. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Photoluminescence and Raman spectroscopy of MBE-grown InN nanocolumns

International Nuclear Information System (INIS)

Segura-Ruiz, J.; Cantarero, A.; Garro, N.; Denker, C.; Werner, F.; Malindretos, J.; Rizzi, A.

2008-01-01

InN nanocolumns grown under different conditions by plasma-assisted molecular beam epitaxy on p-Si (111) substrates are studied by micro-Raman and photoluminescence (PL) spectroscopies. The nanocolumns are free of strain and have an improved crystal quality as shown by the frequency and linewidth of the nonpolar E 2 h mode. Uncoupled polar modes coexist with a couple LO phonon-plasmon mode and are sensitive to the nanocolumn morphology. Variations in the growth conditions also modify the PL spectra significantly. An increase in the PL energy also involves a reduction of the integrated intensity and an increase of the PL linewidth. This overall phenomenology highlights the role of the surface accumulation layer in these nanostructures. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Photoluminescence and Raman spectroscopy of MBE-grown InN nanocolumns

Energy Technology Data Exchange (ETDEWEB)

Segura-Ruiz, J.; Cantarero, A. [Materials Science Institute, University of Valencia, PO Box 22085, 46071 Valencia (Spain); Garro, N. [Materials Science Institute, University of Valencia, PO Box 22085, 46071 Valencia (Spain); Fundacio General de la Universitat de Valencia, University of Valencia, PO Box 22085, 46071 Valencia (Spain); Denker, C.; Werner, F.; Malindretos, J.; Rizzi, A. [IV. Physikalisches Institut, Georg-August Universitaet Goettingen (Germany)

2008-07-01

InN nanocolumns grown under different conditions by plasma-assisted molecular beam epitaxy on p-Si (111) substrates are studied by micro-Raman and photoluminescence (PL) spectroscopies. The nanocolumns are free of strain and have an improved crystal quality as shown by the frequency and linewidth of the nonpolar E{sub 2}{sup h} mode. Uncoupled polar modes coexist with a couple LO phonon-plasmon mode and are sensitive to the nanocolumn morphology. Variations in the growth conditions also modify the PL spectra significantly. An increase in the PL energy also involves a reduction of the integrated intensity and an increase of the PL linewidth. This overall phenomenology highlights the role of the surface accumulation layer in these nanostructures. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Solar hot water system installed at Quality Inn, Key West, Florida

Science.gov (United States)

1980-04-01

The solar energy hot water system installed in the Quality Inn, Key West, Florida, which consists of four buildings is described. Three buildings are low-rise, two-story buildings containing 100 rooms. The fourth is a four-story building with 48 rooms. The solar system was designed to provide approximately 50 percent of the energy required for the domestic hot water system. The solar system consists of approximately 1400 square feet of flat plate collector, two 500 gallon storage tanks, a circulating pump, and a controller. Operation of the system was begun in April 1978, and has continued to date with only three minor interruptions for pump repair. In the first year of operation, it was determined that the use of the solar facility resulted in forty percent fuel savings.

Study of Stark Effect in n-doped 1.55 μm InN0.92yP1-1.92yBiy/InP MQWs

Science.gov (United States)

Bilel, C.; Chakir, K.; Rebey, A.; Alrowaili, Z. A.

2018-05-01

The effect of an applied electric field on electronic band structure and optical absorption properties of n-doped InN0.92y P1-1.92y Bi y /InP multiple quantum wells (MQWs) was theoretically studied using a self-consistent calculation combined with the 16-band anti-crossing model. The incorporation of N and Bi atoms into an InP host matrix leads to rapid reduction of the band gap energy covering a large infrared range. The optimization of the well parameters, such as the well/barrier widths, N/Bi compositions and doping density, allowed us to obtain InN0.92y P1-1.92y Bi y /InP MQWs operating at the wavelength 1.55 μm. Application of the electric field causes a red-shift of the fundamental transition energy T 1 accompanied by a significant change in the spatial distribution of confined electron density. The Stark effect on the absorption coefficient of n-doped InN0.92y P1-1.92y Bi y /InP MQWs was investigated. The Bi composition of these MQWs was adjusted for each electric field value in order to maintain the wavelength emission at 1.55 μm.

R&W Club Frederick Hosts 4th Annual Golf Tournament Benefiting The Children’s Inn at NIH | Poster

Science.gov (United States)

The R&W Club Frederick’s 4th Annual Golf Tournament to benefit the Children’s Inn at NIH teed off on time despite cloudy weather and scattered showers. Employees from NCI at Frederick, the main NIH campus, and Leidos Biomed, along with family and friends, came to enjoy an afternoon at the beautiful Maryland National Golf Club in Middletown and to support a wonderful charity.

High energy ion irradiated III-N semiconductors (AlN, GaN, InN): study of point defect and extended defect creation

International Nuclear Information System (INIS)

Sall, Mamour

2013-01-01

Nitride semiconductors III N (AlN, GaN, InN) have interesting properties for micro-and opto-electronic applications. In use, they may be subjected to different types of radiation in a wide range of energy. In AlN, initially considered insensitive to electronic excitations (Se), we have demonstrated a novel type of synergy between Se and nuclear collisions (Sn) for the creation of defects absorbing at 4.7 eV. In addition, another effect of Se is highlighted in AlN: climb of screw dislocations under the influence of Se, at high fluence. In GaN, two mechanisms can explain the creation of defects absorbing at 2.8 eV: a synergy between Se and Sn, or a creation only due to Sn but with a strong effect of the size of displacement cascades. The study, by TEM, of the effects of Se in the three materials, exhibits behaviors highly dependent on the material while they all belong to the same family with the same atomic structure. Under monoatomic ion irradiations (velocity between 0.4 and 5 MeV/u), while discontinuous tracks are observed in GaN and InN, no track is observed in AlN with the highest electronic stopping power (33 keV/nm). Only fullerene clusters produce tracks in AlN. The inelastic thermal spike model was used to calculate the energies required to produce track in AlN, GaN and InN, they are 4.2 eV/atom, 1.5 eV/atom and 0.8 eV/atom, respectively. This sensitivity difference according to Se, also occurs at high fluence. (author)

Magnetic-field and temperature dependence of the energy gap in InN nanobelt

Directory of Open Access Journals (Sweden)

K. Aravind

2012-03-01

Full Text Available We present tunneling measurements on an InN nanobelt which shows signatures of superconductivity. Superconducting transition takes place at temperature of 1.3K and the critical magnetic field is measured to be about 5.5kGs. The energy gap extrapolated to absolute temperature is about 110μeV. As the magnetic field is decreased to cross the critical magnetic field, the device shows a huge zero-bias magnetoresistance ratio of about 400%. This is attributed to the suppression of quasiparticle subgap tunneling in the presence of superconductivity. The measured magnetic-field and temperature dependence of the superconducting gap agree well with the reported dependences for conventional metallic superconductors.

Dronabinol and chronic pain: importance of mechanistic considerations

NARCIS (Netherlands)

Vries, M. de; Rijckevorsel, D.C.M. van; Wilder-Smith, O.H.G.; Goor, H. van

2014-01-01

INTRODUCTION: Although medicinal cannabis has been used for many centuries, the therapeutic potential of delta-9-tetrahydrocannabinol (Delta9-THC; international non-proprietary name = dronabinol) in current pain management remains unclear. Several pharmaceutical products with defined natural or

Identifying Sustainable Design Opportunities in Tribal Hotels and Casinos: Mescalero Inn of the Mountain Gods Hotel and Casino

Energy Technology Data Exchange (ETDEWEB)

Fuller, Diana [Univ. of Illinois, Springfield, IL (United States); Martino, Anthony [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Materials, Devices, & Energy Technologies; Begay, Sandra K. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Materials, Devices, & Energy Technologies

2016-10-01

The Indian Gaming Regulatory Act, passed by Congress on October 17, 1988 provided tribes with the Federal statute to pursue gaming activities on tribal lands. Many Native communities contribute to larger regional economies and tourism industries. These casino facilities often include resort-style hotel amenities. Not surprisingly, they are also large consumers of energy, operating 24 hours a day and 7 days a week. Tribes with hotels and casinos can implement sustainable design features and not only receive economic gain, but also environmental and community benefits. The intention of this paper is to identify sustainable design opportunities at the Inn of the Mountain Gods Hotel and Casino. This research stems from previous work the researcher conducted and subsequently published for the Illinois Green Business Association. First, the paper reviews what sustainable design is and points of interest when considering sustainable construction. Next, the paper explores the precedents set by the Blue Lake Rancheria, Rincon Band of Luiseno Indians, and the Forest County Potawatomi Tribe. Then, the research examines areas to collect baseline information and identify opportunities in sustainable design for the Mescalero Apache Tribe, Inn of the Mountain Gods Hotel and Casino located in New Mexico. Lastly, the work explores the resources and funding options available to the tribe.

Abstracts. 1978 AFOSR Contractors Meeting on Air-Breathing Combustion Dynamics and Kinetics, Ramada Inn-Downtown Dayton, Ohio, 10 - 13 October 1978

Science.gov (United States)

1978-10-13

Combustion in G.D. Smith, C.E. Peters High Speed Flows AEDC/ARO (PO-78-0012) 5:00 ADJOURN 6:30 Social Hour (Cash Bar) Ramada Inn Banquet 12 Oct. 78...which would sustain the instability structures observed in a number of problemA . During the initial phase of the development of the instabilities, the

Polarized infrared reflectance studies for wurtzite InN epilayers on Si(111) grown by molecular beam expitaxy

International Nuclear Information System (INIS)

Ooi, P.K.; Lee, S.C.; Ng, S.S.; Hassan, Z.; Abu Hassan, H.; Chen, W.L.

2011-01-01

Room temperature polarized infrared reflectance technique is employed to study the optical properties of wurtzite InN epilayers on Si(111) grown by molecular beam expitaxy. The reflection spectra are compared to the calculated spectra generated based on the anisotropic dielectric function model. Good agreement between the measured and calculated spectra is obtained. From the fit of the experimental curve, the reststrahlen parameters at the center of Brillouin zone, the carrier concentration and mobility as well as the epilayers thicknesses are determined. The values of the carrier concentration and mobility are in good agreement with the results obtained from the Hall effects measurements.

Name agreement in picture naming : An ERP study

NARCIS (Netherlands)

Cheng, Xiaorong; Schafer, Graham; Akyürek, Elkan G.

Name agreement is the extent to which different people agree on a name for a particular picture. Previous studies have found that it takes longer to name low name agreement pictures than high name agreement pictures. To examine the effect of name agreement in the online process of picture naming, we

A family of names : rune-names and ogam-names and their relation to alphabet letter-names

NARCIS (Netherlands)

Griffiths, Alan

2013-01-01

The current consensus is that vernacular names assigned to the runes of the Germanic fuþark and to Irish ogam characters are indigenous creations independent of Mediterranean alphabet traditions. I propose, however, that ogam-names are based on interpretations of Hebrew, Greek or Latin letter-names

Hole transport and photoluminescence in Mg-doped InN

Energy Technology Data Exchange (ETDEWEB)

Miller, N.; Ager III, J. W.; Smith III, H. M.; Mayer, M. A.; Yu, K. M.; Haller, E. E.; Walukiewicz, W.; Schaff, W. J.; Gallinat, C.; Koblmuller, G.; Speck, J. S.

2010-03-24

Hole conductivity and photoluminescence were studied in Mg-doped InN films grown by molecular beam epitaxy. Because surface electron accumulation interferes with carrier type determination by electrical measurements, the nature of the majority carriers in the bulk of the films was determined using thermopower measurements. Mg concentrations in a"window" from ca. 3 x 1017 to 1 x 1019 cm-3 produce hole-conducting, p-type films as evidenced by a positive Seebeck coecient. This conclusion is supported by electrolyte-based capacitance voltage measurements and by changes in the overall mobility observed by Hall effect, both of which are consistent with a change from surface accumulation on an n-type film to surface inversion on a p-type film. The observed Seebeck coefficients are understood in terms of a parallel conduction model with contributions from surface and bulk regions. In partially compensated films with Mg concentrations below the window region, two peaks are observed in photoluminescence at 672 meV and at 603 meV. They are attributed to band-to-band and band-to-acceptor transitions, respectively, and an acceptor binding energy of ~;;70 meV is deduced. In hole-conducting films with Mg concentrations in the window region, no photoluminescence is observed; this is attributed to electron trapping by deep states which are empty for Fermi levels close to the valence band edge.

Optical studies of MBE-grown InN nanocolumns: Evidence of surface electron accumulation

Science.gov (United States)

Segura-Ruiz, J.; Garro, N.; Cantarero, A.; Denker, C.; Malindretos, J.; Rizzi, A.

2009-03-01

Vertically self-aligned InN nanocolumns have been investigated by means of scanning electron microscopy, Raman scattering, and photoluminescence spectroscopy. Different nanocolumn morphologies corresponding to different molecular beam epitaxy growth conditions have been studied. Raman spectra revealed strain-free nanocolumns with high crystalline quality for the full set of samples studied. Longitudinal optical modes both uncoupled and coupled to an electron plasma coexist in the Raman spectra pointing to the existence of two distinctive regions in the nanocolumn: a surface layer of degenerated electrons and a nondegenerated inner core. The characteristics of the low-temperature photoluminescence and its dependence on temperature and excitation power can be explained by a model considering localized holes recombining with degenerated electrons close to the nonpolar surface. The differences observed in the optical response of different samples showing similar crystalline quality have been attributed to the variation in the electron accumulation layer with the growth conditions.

Phase mapping of aging process in InN nanostructures: oxygen incorporation and the role of the zinc blende phase

International Nuclear Information System (INIS)

Gonzalez, D; Lozano, J G; Herrera, M; Morales, F M; GarcIa, R; Ruffenach, S; Briot, O

2010-01-01

Uncapped InN nanostructures undergo a deleterious natural aging process at ambient conditions by oxygen incorporation. The phases involved in this process and their localization is mapped by transmission electron microscopy (TEM)-related techniques. The parent wurtzite InN (InN-w) phase disappears from the surface and gradually forms a highly textured cubic layer that completely wraps up a InN-w nucleus which still remains from the original single-crystalline quantum dots. The good reticular relationships between the different crystals generate low misfit strains and explain the apparent easiness for phase transformations at room temperature and pressure conditions, but also disable the classical methods to identify phases and grains from TEM images. The application of the geometrical phase algorithm in order to form numerical moire mappings and RGB multilayered image reconstructions allows us to discern among the different phases and grains formed inside these nanostructures. Samples aged for shorter times reveal the presence of metastable InN:O zinc blende (zb) volumes, which act as the intermediate phase between the initial InN-w and the most stable cubic In 2 O 3 end phase. These cubic phases are highly twinned with a proportion of 50:50 between both orientations. We suggest that the existence of the intermediate InN:O-zb phase should be seriously considered to understand the reason for the widely scattered reported fundamental properties of thought to be InN-w, as its bandgap or superconductivity.

Sensibilidad postratamiento de blanquamiento dental con la solución de McInnes en pacientes con fluorosis dental grado TF4

OpenAIRE

Paredes Balseca, Jenny Carolina

2017-01-01

The dental sensibility is one of the problems caused by multiple factors, one of them is the posttreatment sensibility to the dental clearance, nevertheless it is the most used method at present in the persons who has dental fluorosis with the purpose of improving the color of the tooth and the esthetics, in the present investigation there was studied the behavior of the application of solution of McInnes in this type of teeth by relation to the sensibility Objective: To evaluate the degree o...

Structural and electronic properties of InN nanowire network grown by vapor-liquid-solid method

Science.gov (United States)

Barick, B. K.; Rodríguez-Fernández, Carlos; Cantarero, Andres; Dhar, S.

2015-05-01

Growth of InN nanowires have been carried out on quartz substrates at different temperatures by vapor-liquid-solid (VLS) technique using different thicknesses of Au catalyst layer. It has been found that a narrow window of Au layer thickness and growth temperature leads to multi-nucleation, in which each site acts as the origin of several nanowires. In this multi-nucleation regime, several tens of micrometer long wires with diameter as small as 20 nm are found to grow along [ 11 2 ¯ 0 ] direction (a-plane) to form a dense network. Structural and electronic properties of these wires are studied. As grown nanowires show degenerate n-type behavior. Furthermore, x-ray photoemission study reveals an accumulation of electrons on the surface of these nanowires. Interestingly, the wire network shows persistence of photoconductivity for several hours after switching off the photoexcitation.

Structural and electronic properties of InN nanowire network grown by vapor-liquid-solid method

Energy Technology Data Exchange (ETDEWEB)

Barick, B. K., E-mail: bkbarick@gmail.com, E-mail: subho-dh@yahoo.co.in; Dhar, S., E-mail: bkbarick@gmail.com, E-mail: subho-dh@yahoo.co.in [Department of Physics, Indian Institute of Technology, Bombay, Mumbai-400076 (India); Rodríguez-Fernández, Carlos; Cantarero, Andres [Materials Science Institute, University of Valencia, PO Box 22085, 46071 Valencia (Spain)

2015-05-15

Growth of InN nanowires have been carried out on quartz substrates at different temperatures by vapor-liquid-solid (VLS) technique using different thicknesses of Au catalyst layer. It has been found that a narrow window of Au layer thickness and growth temperature leads to multi-nucleation, in which each site acts as the origin of several nanowires. In this multi-nucleation regime, several tens of micrometer long wires with diameter as small as 20 nm are found to grow along [112{sup -}0] direction (a-plane) to form a dense network. Structural and electronic properties of these wires are studied. As grown nanowires show degenerate n-type behavior. Furthermore, x-ray photoemission study reveals an accumulation of electrons on the surface of these nanowires. Interestingly, the wire network shows persistence of photoconductivity for several hours after switching off the photoexcitation.

Electrical transport in GaN and InN nanowires; Elektrischer Transport in GaN- und InN-Nanodraehten

Energy Technology Data Exchange (ETDEWEB)

Richter, Thomas Fabian

2008-12-19

This thesis discusses the analysis of the electrical transport in GaN and InN nanowires at room temperature and deep temperatures. From those measurements two different transport models for those two in matter of the band banding completely different materials have been found. In the investigation of the GaN nanowires the main focus was the electrical transport in dependence of the diameter and the n-doping. With the use of IV-measurements on those MBE grown nanowires with different diameters at dark and under UV illumination as well as the decay of the persistent photocurrent, it was possible to find an for GaN untypical behaviour. The electrical transport in those wires is extremely diameter dependent. The dark current shows space charged limited current. With the help of those cognitions a diameter dependent transport model could be found. The transport phenomena in those wires is based on the diameter depending band bending at the edge of the wires caused by the Fermi level pinning inside the forbidden band. This model can be fit to the data with the three parameter doping, fermi level pinning and wire diameter. On the base of those effects a method to determine the doping concentration inside those wires without field effect measurements and contact resistance has been developed. The defect structure inside those wires has been analysed with the help of spectral photoluminescence measurements. Here several defect bands have been found and it was possible with help of several contacts on one single wire to determine different defect regions along the wire and to explain them by the lattice mismatch between nanowire and substrate. Further temperature depending measurements and investigations on Schottky contacted wires as well as on GaN wires with AlN tunnel structures complete the work on GaN. The electrical characterisation on a large scale of undoped and doped InN nanowires shows linear growth of the dark current with the diameter up to wires of around 100 nm

PLAN DE MARKETING PARA EL HOTEL CARRIZAL INN

Directory of Open Access Journals (Sweden)

Ángel Guillermo Félix Mendoza

2015-06-01

Full Text Available El objetivo principal de esta investigación fue la elaboración de un plan de marketing para el Hotel Carrizal Inn ubicado en la ciudad de Calceta, provincia de Manabí, Ecuador. Se estructuraron tres fases metodológicas, el diagnóstico situacional, estudio de mercado y plan turístico. En la primera fase se delimitó el área de estudio; además se efectuó un análisis interno y externo, utilizando matrices de diagnóstico como la evaluación de factores internos y externos, matriz de competidores y matriz de diagnóstico de fortalezas, oportunidades, debilidades y amenazas. En el estudio de mercado se analizaron los componentes de oferta y demanda del hotel, se determinaron algunas fallas en la denominación utilizada, según los criterios para la categorización hotelera manejada por el Ministerio de Turismo. En función del diagnóstico FODA, se generaron estrategias para el posicionamiento y comercialización del hotel. Mediante las encuestas realizadas a los huéspedes se pudo conocer el perfil del visitante que llega al hotel y se elaboró un plan publicitario, en el cual sobresale el logotipo y slogan, tríptico promocional, la promoción en página web y redes sociales. Se establecieron estrategias del mix para minimizar falencias operativas en el hotel. Se concluye que la principal nomenclatura utilizada no concuerda con los parámetros establecidos por el Ministerio de Turismo, por lo que se plantea reestructurar ciertas áreas específicas como la cantidad de habitaciones o cambiar la denominación a hostal.

Structural and electronic properties of InN nanowire network grown by vapor-liquid-solid method

Directory of Open Access Journals (Sweden)

B. K. Barick

2015-05-01

Full Text Available Growth of InN nanowires have been carried out on quartz substrates at different temperatures by vapor-liquid-solid (VLS technique using different thicknesses of Au catalyst layer. It has been found that a narrow window of Au layer thickness and growth temperature leads to multi-nucleation, in which each site acts as the origin of several nanowires. In this multi-nucleation regime, several tens of micrometer long wires with diameter as small as 20 nm are found to grow along [ 11 2 ̄ 0 ] direction (a-plane to form a dense network. Structural and electronic properties of these wires are studied. As grown nanowires show degenerate n-type behavior. Furthermore, x-ray photoemission study reveals an accumulation of electrons on the surface of these nanowires. Interestingly, the wire network shows persistence of photoconductivity for several hours after switching off the photoexcitation.

A name is a name is a name: some thoughts and personal opinions about molluscan scientific names

NARCIS (Netherlands)

Dance, S.P.

2009-01-01

Since 1758, with the publication of Systema Naturae by Linnaeus, thousands of scientific names have been proposed for molluscs. The derivation and uses of many of them are here examined from various viewpoints, beginning with names based on appearance, size, vertical distribution, and location.

North-American norms for name disagreement: pictorial stimuli naming discrepancies.

Directory of Open Access Journals (Sweden)

Mary O'Sullivan

Full Text Available Pictorial stimuli are commonly used by scientists to explore central processes; including memory, attention, and language. Pictures that have been collected and put into sets for these purposes often contain visual ambiguities that lead to name disagreement amongst subjects. In the present work, we propose new norms which reflect these sources of name disagreement, and we apply this method to two sets of pictures: the Snodgrass and Vanderwart (S&V set and the Bank of Standardized Stimuli (BOSS. Naming responses of the presented pictures were classified within response categories based on whether they were correct, incorrect, or equivocal. To characterize the naming strategy where an alternative name was being used, responses were further divided into different sub-categories that reflected various sources of name disagreement. Naming strategies were also compared across the two sets of stimuli. Results showed that the pictures of the S&V set and the BOSS were more likely to elicit alternative specific and equivocal names, respectively. It was also found that the use of incorrect names was not significantly different across stimulus sets but that errors were more likely caused by visual ambiguity in the S&V set and by a misuse of names in the BOSS. Norms for name disagreement presented in this paper are useful for subsequent research for their categorization and elucidation of name disagreement that occurs when choosing visual stimuli from one or both stimulus sets. The sources of disagreement should be examined carefully as they help to provide an explanation of errors and inconsistencies of many concepts during picture naming tasks.

Evaluation of testing strategies for the radiation tolerant ATLAS n **+-in-n pixel sensor

CERN Document Server

Klaiber Lodewigs, Jonas M

2003-01-01

The development of particle tracker systems for high fluence environments in new high-energy physics experiments raises new challenges for the development, manufacturing and reliable testing of radiation tolerant components. The ATLAS pixel detector for use at the LHC, CERN, is designed to cover an active sensor area of 1.8 m**2 with 1.1 multiplied by 10 **8 read-out channels usable for a particle fluence up to 10 **1**5 cm**-**2 (1 MeV neutron equivalent) and an ionization dose up to 500 kGy of mainly charged hadron radiation. To cope with such a harsh environment the ATLAS Pixel Collaboration has developed a radiation hard n **+-in-n silicon pixel cell design with a standard cell size of 50 multiplied by 400 mum**2. Using this design on an oxygenated silicon substrate, sensor production has started in 2001. This contribution describes results gained during the development of testing procedures of the ATLAS pixel sensor and evaluates quality assurance procedures regarding their relevance for detector operati...

Molten Salt-Based Growth of Bulk GaN and InN for Substrates

Energy Technology Data Exchange (ETDEWEB)

Waldrip, Karen Elizabeth [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Advanced Power Sources Technology Dept.; Tsao, Jeffrey Yeenien [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Energy Sciences Dept.; Kerley, Thomas M. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Advanced Materials Sciences Dept.

2006-09-01

An atmospheric pressure approach to growth of bulk group III-nitrides is outlined. Native III-nitride substrates for optoelectronic and high power, high frequency electronics are desirable to enhance performance and reliability of these devices; currently, these materials are available in research quantities only for GaN, and are unavailable in the case of InN. The thermodynamics and kinetics of the reactions associated with traditional crystal growth techniques place these activities on the extreme edges of experimental physics. The technique described herein relies on the production of the nitride precursor (N^3-) by chemical and/or electrochemical methods in a molten halide salt. This nitride ion is then reacted with group III metals in such a manner as to form the bulk nitride material. The work performed during the period of funding (July 2004-September 2005) focused on the initial measurement of the solubility of GaN in molten LiCl as a function of temperature, the construction of electrochemical cells, the modification of a commercial glove box (required for handling very hygroscopic LiCl), and on securing intellectual property for the technique.

Growth of high-quality hexagonal InN on 3C-SiC (001) by molecular beam epitaxy

International Nuclear Information System (INIS)

Yaguchi, Hiroyuki; Hijikata, Yasuto; Yoshida, Sadafumi; Kitamura, Yoshihiro; Nishida, Kenji; Iwahashi, Yohei

2005-01-01

We have grown hexagonal InN (h-InN) films on 3C-SiC (001) substrates by RF-N 2 plasma molecular beam epitaxy taking account of small lattice mismatch between h-InN (10-10) and 3C-SiC (110). It was found from X-ray diffraction (XRD) measurements that h-InN grows with h-InN (0001) vertical stroke vertical stroke 3C-SiC (001) and h-InN (1-100) vertical stroke vertical stroke 3C-SiC (110). XRD measurements also revealed that the h-InN epitaxial layers grown on 3C-SiC (001) are composed of single domain. Strong and sharp photoluminescence from the h-InN was clearly observed at around 0.69 eV. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

77 FR 29750 - Fifteenth Meeting: RTCA Special Committee 214, Joint With EUROCAE WG-78, Standards for Air...

Science.gov (United States)

2012-05-18

....int no later than May 21, 2012 with the following security information: Last Name/ First name, Organization, ID or Passport number, Details for visiting the Maastricht centre, hotels and how to get here can... , (for hotels please note that the hotel ``Tulip Inn Maastricht Airport'' is next to the runway and the...

The three names

NARCIS (Netherlands)

Bas Jongenelen

2011-01-01

Two spectators are each asked to think of a girl's name (because your sister in law is pregnant and names are a big issue at the moment in your family.) You explain that you have a boy's name in your head, and you ask the spectators to think what this boy's name might be. You write three names on a

Parents accidentally substitute similar sounding sibling names more often than dissimilar names.

Directory of Open Access Journals (Sweden)

Zenzi M Griffin

Full Text Available When parents select similar sounding names for their children, do they set themselves up for more speech errors in the future? Questionnaire data from 334 respondents suggest that they do. Respondents whose names shared initial or final sounds with a sibling's reported that their parents accidentally called them by the sibling's name more often than those without such name overlap. Having a sibling of the same gender, similar appearance, or similar age was also associated with more frequent name substitutions. Almost all other name substitutions by parents involved other family members and over 5% of respondents reported a parent substituting the name of a pet, which suggests a strong role for social and situational cues in retrieving personal names for direct address. To the extent that retrieval cues are shared with other people or animals, other names become available and may substitute for the intended name, particularly when names sound similar.

Geographic Names

Data.gov (United States)

Minnesota Department of Natural Resources — The Geographic Names Information System (GNIS), developed by the United States Geological Survey in cooperation with the U.S. Board of Geographic Names, provides...

What's in a Name? Interlocutors Dynamically Update Expectations about Shared Names.

Science.gov (United States)

Gegg-Harrison, Whitney M; Tanenhaus, Michael K

2016-01-01

In order to refer using a name, speakers must believe that their addressee knows about the link between the name and the intended referent. In cases where speakers and addressees learned a subset of names together, speakers are adept at using only the names their partner knows. But speakers do not always share such learning experience with their conversational partners. In these situations, what information guides speakers' choice of referring expression? A speaker who is uncertain about a names' common ground (CG) status often uses a name and description together. This N+D form allows speakers to demonstrate knowledge of a name, and could provide, even in the absence of miscommunication, useful evidence to the addressee regarding the speaker's knowledge. In cases where knowledge of one name is associated with knowledge of other names, this could provide indirect evidence regarding knowledge of other names that could support generalizations used to update beliefs about CG. Using Bayesian approaches to language processing as a guiding framework, we predict that interlocutors can use their partner's choice of referring expression, in particular their use of an N+D form, to generate more accurate beliefs regarding their partner's knowledge of other names. In Experiment 1, we find that domain experts are able to use their partner's referring expression choices to generate more accurate estimates of CG. In Experiment 2, we find that interlocutors are able to infer from a partner's use of an N+D form which other names that partner is likely to know or not know. Our results suggest that interlocutors can use the information conveyed in their partner's choice of referring expression to make generalizations that contribute to more accurate beliefs about what is shared with their partner, and further, that models of CG for reference need to account not just for the status of referents, but the status of means of referring to those referents.

Beaulieu-Boycott-Innes syndrome: an intellectual disability syndrome with characteristic facies.

Science.gov (United States)

Casey, Jillian; Jenkinson, Allan; Magee, Alex; Ennis, Sean; Monavari, Ahmad; Green, Andrew; Lynch, Sally A; Crushell, Ellen; Hughes, Joanne

2016-10-01

We report a female child from an Irish Traveller family presenting with severe intellectual disability, dysmorphic features, renal anomalies, dental caries and cyclical vomiting. Current health issues include global developmental delay, mild concentric left ventricular hypertrophy, dental malocclusion and caries and a single duplex left kidney. The proband and her mother also have multiple epiphyseal dysplasia. Whole-exome sequencing was performed to identify the underlying genetic cause. DNA from the proband was enriched with the Agilent Sure Select v5 Exon array and sequenced on an Illumina HiSeq. Rare homozygous variants were prioritized. Whole-exome sequencing identified three linked homozygous missense variants in THOC6 (c.298T>A, p.Trp100Arg; c.700G>C, p.Val234Leu; c.824G>A, p.Gly275Asp) as the likely cause of this child's intellectual disability syndrome, resulting in a molecular diagnosis of Beaulieu-Boycott-Innes syndrome (BBIS). This is the first report of BBIS in Europe. BBIS has been reported previously in two Hutterite families and one Saudi family. A review of all patients to date shows a relatively homogenous phenotype. Core clinical features include low birth weight with subsequent growth failure, short stature, intellectual disability with language delay, characteristic facies, renal anomalies and dental malocclusion with caries. Some patients also have cardiac defects. All patients show characteristic dysmorphic facial features including a tall forehead with high anterior hairline and deep-set eyes with upslanting palpebral fissures. The coexistence of intellectual disability together with these characteristic facies should provide a diagnostic clue for BBIS during patient evaluation.

What’s in a Name? – Consequences of Naming Non-Human Animals

DEFF Research Database (Denmark)

Borkfelt, Sune

2011-01-01

have consequences for the way we think about animals (human and non-human), peoples, species, places, things etc. Through a blend of history, philosophy and representational theory—and using examples from, among other things, the Bible, Martin Luther, colonialism/imperialism and contemporary ways......The act of naming is among the most basic actions of language. Indeed, it is naming something that enables us to communicate about it in specific terms, whether the object named is human or non-human, animate or inanimate. However, naming is not as uncomplicated as we may usually think and names...... of keeping and regarding non-human animals—this paper attempts to trace the importance of (both specific and generic) naming to our relationships with the non-human. It explores this topic from the naming of the animals in Genesis to the names given and used by scientists, keepers of companion animals, media...

What's in a Name? Interlocutors dynamically update expectations about shared names

Directory of Open Access Journals (Sweden)

Whitney Marie Gegg-Harrison

2016-02-01

Full Text Available In order to refer using a name, speakers must know that their addressee knows about the link between the name and the intended referent. In cases where speakers and addressees learned names together, speakers are adept at using names only when their addressee knows them. But speakers do not always share such learning experience with their conversational partners. In these situations, what information guides speakers’ choice of referring expression? A speaker who is uncertain about a names’ common ground (CG status often uses a name and description together. This N+D form allows speakers to demonstrate knowledge of a name, and could provide, even in the absence of miscommunication, useful evidence to the addressee regarding the speaker’s knowledge. In cases where knowledge of one name is associated with knowledge of other names, could provide indirect evidence regarding knowledge of other names that could support generalizations used to update beliefs about CG. Using data explanation approaches to language processing as a guiding framework, we predict that interlocutors can use their partner’s choice of referring expression, in particular their use of an N+D form, to generate more accurate beliefs regarding their partner’s knowledge of other names. In Experiment 1, we find that domain experts are able to use their partner’s referring expression choices to generate more accurate estimates of CG. In Experiment 2, we find that interlocutors are able to infer from a partner’s use of an N+D form which other names that partner is likely to know or not know. Our results suggest that interlocutors can use the information conveyed in their partner’s choice of referring expression to make generalizations that contribute to more accurate beliefs about what is shared with their partner, and further, that models of CG for reference need to account not just for the status of referents, but the status of means of referring to those referents.

Names of Southern African grasses: Name changes and additional ...

African Journals Online (AJOL)

The main reasons for changes in botanical names are briefly reviewed, with examples from the lists. At this time, about 1040 grass species and subspecific taxa are recognized in the subcontinent. Keywords: botanical research; botanical research institute; botany; grass; grasses; identification; name change; nomenclature; ...

Distribution of Chinese names

Science.gov (United States)

Huang, Ding-wei

2013-03-01

We present a statistical model for the distribution of Chinese names. Both family names and given names are studied on the same basis. With naive expectation, the distribution of family names can be very different from that of given names. One is affected mostly by genealogy, while the other can be dominated by cultural effects. However, we find that both distributions can be well described by the same model. Various scaling behaviors can be understood as a result of stochastic processes. The exponents of different power-law distributions are controlled by a single parameter. We also comment on the significance of full-name repetition in Chinese population.

British Sign Name Customs

Science.gov (United States)

Day, Linda; Sutton-Spence, Rachel

2010-01-01

Research presented here describes the sign names and the customs of name allocation within the British Deaf community. While some aspects of British Sign Language sign names and British Deaf naming customs differ from those in most Western societies, there are many similarities. There are also similarities with other societies outside the more…

Electronic and thermoelectric properties of InN studied using ab initio density functional theory and Boltzmann transport calculations

Energy Technology Data Exchange (ETDEWEB)

Borges, P. D., E-mail: pdborges@gmail.com, E-mail: lscolfaro@txstate.edu; Scolfaro, L., E-mail: pdborges@gmail.com, E-mail: lscolfaro@txstate.edu [Department of Physics, Texas State University, San Marcos, Texas 78666 (United States)

2014-12-14

The thermoelectric properties of indium nitride in the most stable wurtzite phase (w-InN) as a function of electron and hole concentrations and temperature were studied by solving the semiclassical Boltzmann transport equations in conjunction with ab initio electronic structure calculations, within Density Functional Theory. Based on maximally localized Wannier function basis set and the ab initio band energies, results for the Seebeck coefficient are presented and compared with available experimental data for n-type as well as p-type systems. Also, theoretical results for electric conductivity and power factor are presented. Most cases showed good agreement between the calculated properties and experimental data for w-InN unintentionally and p-type doped with magnesium. Our predictions for temperature and concentration dependences of electrical conductivity and power factor revealed a promising use of InN for intermediate and high temperature thermoelectric applications. The rigid band approach and constant scattering time approximation were utilized in the calculations.

What's in a Name

Science.gov (United States)

Bush, Sarah B.; Albanese, Judith; Karp, Karen S.

2016-01-01

Historically, some baby names have been more popular during a specific time span, whereas other names are considered timeless. The Internet article, "How to Tell Someone's Age When All You Know Is Her Name" (Silver and McCann 2014), describes the phenomenon of the rise and fall of name popularity, which served as a catalyst for the…

Dictionary of Alaska place names

Science.gov (United States)

Orth, Donald J.

1971-01-01

This work is an alphabetical list of the geographic names that are now applied and have been applied to places and features of the Alaska landscape. Principal names, compiled from modem maps and charts and printed in boldface type, generally reflect present-day local usage. They conform to the principles of the U.S. Board on Geographic Names for establishing standard names for use on Government maps and in other Government publications. Each name entry gives the present-day spelling along with variant spellings and names; identifies the feature named; presents the origin and history of the name; and, where possible, gives the meaning of an Eskimo, Aleut, Indian, or foreign name. Variant, obsolete, and doubtful names are alphabetically listed and are cross referenced, where necessary, to the principal entries.

Directory of awardee names

Energy Technology Data Exchange (ETDEWEB)

1999-07-01

Standardization of grant and contract awardee names has been an area of concern since the development of the Department`s Procurement and Assistance Data System (PADS). A joint effort was begun in 1983 by the Office of Scientific and Technical Information (OSTI) and the Office of Procurement and Assistance Management/Information Systems and Analysis Division to develop a means for providing uniformity of awardee names. As a result of this effort, a method of assigning vendor identification codes to each unique awardee name, division, city, and state combination was developed and is maintained by OSTI. Changes to vendor identification codes or awardee names contained in PADS can be made only by OSTI. Awardee names in the Directory indicate that the awardee has had a prime contract (excluding purchase orders of $10,000 or less) with, or a financial assistance award from, the Department. Award status--active, inactive, or retired--is not shown. The Directory is in alphabetic sequence based on awardee name and reflects the OSTI-assigned vendor identification code to the right of the name. A vendor identification code is assigned to each unique awardee name, division, city, and state (for place of performance). The same vendor identification code is used for awards throughout the Department.

Retrospective forecasts of the upcoming winter season snow accumulation in the Inn headwaters (European Alps)

Science.gov (United States)

Förster, Kristian; Hanzer, Florian; Stoll, Elena; Scaife, Adam A.; MacLachlan, Craig; Schöber, Johannes; Huttenlau, Matthias; Achleitner, Stefan; Strasser, Ulrich

2018-02-01

This article presents analyses of retrospective seasonal forecasts of snow accumulation. Re-forecasts with 4 months' lead time from two coupled atmosphere-ocean general circulation models (NCEP CFSv2 and MetOffice GloSea5) drive the Alpine Water balance and Runoff Estimation model (AWARE) in order to predict mid-winter snow accumulation in the Inn headwaters. As snowpack is hydrological storage that evolves during the winter season, it is strongly dependent on precipitation totals of the previous months. Climate model (CM) predictions of precipitation totals integrated from November to February (NDJF) compare reasonably well with observations. Even though predictions for precipitation may not be significantly more skilful than for temperature, the predictive skill achieved for precipitation is retained in subsequent water balance simulations when snow water equivalent (SWE) in February is considered. Given the AWARE simulations driven by observed meteorological fields as a benchmark for SWE analyses, the correlation achieved using GloSea5-AWARE SWE predictions is r = 0.57. The tendency of SWE anomalies (i.e. the sign of anomalies) is correctly predicted in 11 of 13 years. For CFSv2-AWARE, the corresponding values are r = 0.28 and 7 of 13 years. The results suggest that some seasonal prediction of hydrological model storage tendencies in parts of Europe is possible.

Marine Place Names

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains the geographic place names for features in the U.S territorial waters and outer continental shelf. These names can be used to find or define a...

By which name should I call thee? The consequences of having multiple names.

Science.gov (United States)

Stevenage, Sarah V; Lewis, Hugh G

2005-11-01

The nominal competitor effect suggests that, when a person has two names associated with them, recall of either name is more difficult than if they just had one name. Drawing on a connectionist framework, this effect could arise either if multiple names were represented as being connected to a single person identity node (PIN), or if multiple names were represented as being connected via one-to-one links to multiple PINs. Whilst the latter has intuitive appeal, results from two experiments support the former architecture. Having two names connected to a single PIN not only gives rise to a nominal competitor effect (Experiment 1), but also gives rise to a familiarity enhancement effect (Experiment 2). These empirical results are simulated using an extension of Brédart, Valentine, Calder, and Gassi's (1995) connectionist architecture, which reveals that both effects hold even when the association of both names to the PIN is unequal. These results are presented in terms of a more complete model for person recognition, and the representation of semantic information within such a model is examined.

Naming as Strategic Communication

DEFF Research Database (Denmark)

Schmeltz, Line; Kjeldsen, Anna Karina

2016-01-01

This article presents a framework for understanding corporate name change as strategic communication. From a corporate branding perspective, the choice of a new name can be seen as a wish to stand out from a group of similar organizations. Conversely, from an institutional perspective, name change...

Structural and electronic properties of InN epitaxial layer grown on c-plane sapphire by chemical vapor deposition technique

Energy Technology Data Exchange (ETDEWEB)

Barick, Barun Kumar, E-mail: bkbarick@gmail.com; Prasad, Nivedita; Saroj, Rajendra Kumar; Dhar, Subhabrata [Department of Physics, Indian Institute of Technology, Bombay, Mumbai 400076 (India)

2016-09-15

Growth of InN epilayers on c-plane sapphire substrate by chemical vapor deposition technique using pure indium metal and ammonia as precursors has been systematically explored. It has been found that [0001] oriented indium nitride epitaxial layers with smooth surface morphology can be grown on c-plane sapphire substrates by optimizing the growth conditions. Bandgap of the film is observed to be Burstein–Moss shifted likely to be due to high background electron concentration. It has been found that the concentration of this unintentional doping decreases with the increase in the growth temperature and the ammonia flux. Epitaxial quality on the other hand deteriorates as the growth temperature increases. Moreover, the morphology of the deposited layer has been found to change from flat top islands to faceted mounds as the flow rate of ammonia increases. This phenomenon is expected to be related to the difference in surface termination character at low and high ammonia flow rates.

What's in a Name? Sound Symbolism and Gender in First Names.

Directory of Open Access Journals (Sweden)

David M Sidhu

Full Text Available Although the arbitrariness of language has been considered one of its defining features, studies have demonstrated that certain phonemes tend to be associated with certain kinds of meaning. A well-known example is the Bouba/Kiki effect, in which nonwords like bouba are associated with round shapes while nonwords like kiki are associated with sharp shapes. These sound symbolic associations have thus far been limited to nonwords. Here we tested whether or not the Bouba/Kiki effect extends to existing lexical stimuli; in particular, real first names. We found that the roundness/sharpness of the phonemes in first names impacted whether the names were associated with round or sharp shapes in the form of character silhouettes (Experiments 1a and 1b. We also observed an association between femaleness and round shapes, and maleness and sharp shapes. We next investigated whether this association would extend to the features of language and found the proportion of round-sounding phonemes was related to name gender (Analysis of Category Norms. Finally, we investigated whether sound symbolic associations for first names would be observed for other abstract properties; in particular, personality traits (Experiment 2. We found that adjectives previously judged to be either descriptive of a figuratively 'round' or a 'sharp' personality were associated with names containing either round- or sharp-sounding phonemes, respectively. These results demonstrate that sound symbolic associations extend to existing lexical stimuli, providing a new example of non-arbitrary mappings between form and meaning.

Multi-language naming game

Science.gov (United States)

Zhou, Jianfeng; Lou, Yang; Chen, Guanrong; Tang, Wallace K. S.

2018-04-01

Naming game is a simulation-based experiment used to study the evolution of languages. The conventional naming game focuses on a single language. In this paper, a novel naming game model named multi-language naming game (MLNG) is proposed, where the agents are different-language speakers who cannot communicate with each other without a translator (interpreter) in between. The MLNG model is general, capable of managing k different languages with k ≥ 2. For illustration, the paper only discusses the MLNG with two different languages, and studies five representative network topologies, namely random-graph, WS small-world, NW small-world, scale-free, and random-triangle topologies. Simulation and analysis results both show that: 1) using the network features and based on the proportion of translators the probability of establishing a conversation between two or three agents can be theoretically estimated; 2) the relationship between the convergence speed and the proportion of translators has a power-law-like relation; 3) different agents require different memory sizes, thus a local memory allocation rule is recommended for saving memory resources. The new model and new findings should be useful for further studies of naming games and for better understanding of languages evolution from a dynamical network perspective.

Socioeconomic determinants of first names

NARCIS (Netherlands)

Bloothooft, G.; Onland, D.

2011-01-01

Modern naming practices in the Netherlands between 1982 and 2005 were studied on the basis of 1409 popular first names, divided into fourteen name groups determined by the common preferences of parents for the names involved. Socioeconomic variables such as family income, parents' level of

An Overview of the Geological and Geotechnical Aspects of the New Railway Line in the Lower Inn Valley

Science.gov (United States)

Eder, Stefan; Poscher, Gerhard; Sedlacek, Christoph

The new railway line in the lower Inn-valley is part of the Brenner railway axis from Munich to Verona (feeder north). The first section between the villages of Kundl and Radfeld, west of Wörgl, and the village of Baumkirchen, east of Innsbruck, will become one of the biggest infrastructure projects ever built in Austria, with a length of approx. 43 km and an underground portion of approx. 80%. The article gives an overview of the various geologic formations - hard rock sections in the valley slopes, different water-saturated gravel and sand formations in the valley floor and geotechnically difficult conditions in sediments of Quaternary terraces. It also describes the methodology of the soil reconnaissance using groundwater models for hydrogeologic estimations, core drillings for evaluating geologic models and describes the experiences gained from the five approx. 7.5 km long reconnaissance tunnels for geotechnical and hydrogeological testing. The results of the soil reconnaissance were used to plan different construction methods, such as excavation in soft rock under a jet grouting roof and compressed-air, as well as mechanised shield with fluid support.

Validation of a simple distributed sediment delivery approach in selected sub-basins of the River Inn catchment area

Science.gov (United States)

Reid, Lucas; Kittlaus, Steffen; Scherer, Ulrike

2015-04-01

For large areas without highly detailed data the empirical Universal Soil Loss Equation (USLE) is widely used to quantify soil loss. The problem though is usually the quantification of actual sediment influx into the rivers. As the USLE provides long-term mean soil loss rates, it is often combined with spatially lumped models to estimate the sediment delivery ratio (SDR). But it gets difficult with spatially lumped approaches in large catchment areas where the geographical properties have a wide variance. In this study we developed a simple but spatially distributed approach to quantify the sediment delivery ratio by considering the characteristics of the flow paths in the catchments. The sediment delivery ratio was determined using an empirical approach considering the slope, morphology and land use properties along the flow path as an estimation of travel time of the eroded particles. The model was tested against suspended solids measurements in selected sub-basins of the River Inn catchment area in Germany and Austria, ranging from the high alpine south to the Molasse basin in the northern part.

Elemental Etymology: What's in a Name?

Science.gov (United States)

Ball, David W.

1985-01-01

Examines the origin of the names (or etymologies) of the chemical elements. Includes tables listing elements: (1) with names of obscure origin; (2) named for colors; (3) named after real or mythical people; (4) named after places; (5) named after heavenly bodies; and (6) having names of miscellaneous origin. (JN)

MARKED PERSONAL NAMES: AN ANTROPONIMIC STUDY OF BALINESE STUDENTS’ NAMES IN DENPASAR

Directory of Open Access Journals (Sweden)

Ni Made Iwan Indrawan

2015-07-01

Full Text Available The research aims to account for the Marked Balinese Students’ Personal Names. Four research problems are studied, namely (1 the criteria used to distinguish the marked names (NDMBmk and the unmarked ones (NDMTBmk, (2 the functions of the markedness, (3 the factors that influence it, and (4 the ideologies that operate behind it. The markedness of personal names reflect a relation between the arbitrariness in language uses and the extralinguistic factors influencing it. In the context of Balinese, the tradition, legal practices, and the globalisation may affect the arbitrariness. In order to determine NDMBmk, criteria of markedness was constructed. According to the criteria, structurally, NDMBmk consist of at least five elements, as Anak Agung Arim Kasunu Arya Penarungan. Behaviorally, they may consist of names not derived from Balinese and/or Sanskrit, such as Giovani on I Gede Adeyaka Giovani, adopt a foreign spelling system as Chrisna on Ni Putu Chrisna Wulandari, or use no markers of Balinese ethnics or caste as Yunisari Wira Putri. Out of 698 sampled names, NDMBmk are found 54. Besides denoting, the marked elements also function to distinguish personal identities, to shape the existence of the name holder, to connote particular perception, and to reflect the changing era. The factors influencing the markedness are the need to express something new, a wish to acculturate, to raise status or keep a distance socially, and to demonstrate a linguistic expertise, or when seeing from the concept of imagery, the factors are the imagery on something new and on social status or distancing. The ideologies behind the phenomenon are globalist, nationalist, and the casteless-Balinese.

MARKED PERSONAL NAMES: AN ANTROPONIMIC STUDY OF BALINESE STUDENTS’ NAMES IN DENPASAR

Directory of Open Access Journals (Sweden)

Ni Made Iwan Indrawan

2012-07-01

Full Text Available The research aims to account for the Marked Balinese Students’ Personal Names. Four research problems are studied, namely (1 the criteria used to distinguish the marked names (NDMBmk and the unmarked ones (NDMTBmk, (2 the functions of the markedness, (3 the factors that influence it, and (4 the ideologies that operate behind it. The markedness of personal names reflect a relation between the arbitrariness in language uses and the extralinguistic factors influencing it. In the context of Balinese, the tradition, legal practices, and the globalisation may affect the arbitrariness. In order to determine NDMBmk, criteria of markedness was constructed. According to the criteria, structurally, NDMBmk consist of at least five elements, as Anak Agung Arim Kasunu Arya Penarungan. Behaviorally, they may consist of names not derived from Balinese and/or Sanskrit, such as Giovani on I Gede Adeyaka Giovani, adopt a foreign spelling system as Chrisna on Ni Putu Chrisna Wulandari, or use no markers of Balinese ethnics or caste as Yunisari Wira Putri. Out of 698 sampled names, NDMBmk are found 54. Besides denoting, the marked elements also function to distinguish personal identities, to shape the existence of the name holder, to connote particular perception, and to reflect the changing era. The factors influencing the markedness are the need to express something new, a wish to acculturate, to raise status or keep a distance socially, and to demonstrate a linguistic expertise, or when seeing from the concept of imagery, the factors are the imagery on something new and on social status or distancing. The ideologies behind the phenomenon are globalist, nationalist, and the casteless-Balinese.

On identifying name equivalences in digital libraries. Name equivalence, Surname matching, Author identification, Databases

Directory of Open Access Journals (Sweden)

Dror G. Feitelson

2004-01-01

Full Text Available The services provided by digital libraries can be much improved by correctly identifying variants of the same name. For example, this will allow for better retrieval of all the works by a certain author. We focus on variants caused by abbreviations of first names, and show that significant achievements are possible by simple lexical analysis and comparison of names. This is done in two steps: first a pairwise matching of names is performed, and then these are used to find cliques of equivalent names. However, these steps can each be performed in a variety of ways. We therefore conduct an experimental analysis using two real datasets to find which approaches actually work well in practice. Interestingly, this depends on the size of the repository, as larger repositories may have many more similar names.

Temporal Features of the Differentiation between Self-Name and Religious Leader Name among Christians: An ERP Study

Directory of Open Access Journals (Sweden)

Ruixue Xia

2018-01-01

Full Text Available Existing neuroimaging studies have shown that religion, as a subjective culture, can influence self-referential processing. However, the time course of this impact remains unclear. The present study examined how Christians process their own names, the name of their religious leader (i.e., Jesus, and a famous person’s name (i.e., Yao Ming. Behavioral and EEG data were recorded while the participants performed a name-color judgment task for these three names. The behavioral data showed no significant differences in reaction time or accuracy among the names. However, the ERP data showed that the P200 and P300 amplitudes elicited by the self-name and religious leader name were larger than those elicited by the famous name. Furthermore, the self-name also elicited a larger P300 amplitude than the religious leader name did. These results suggested that both the self-name and the religious leader name were processed preferentially due to their important social value for the self as compared to a generally famous name. Importantly, the dissociation between the self-name and the religious leader name was observed at a high-order cognitive stage, which might be attributed to their different roles in one’s self-concept.

Naming names: the first women taxonomists in mycology

Directory of Open Access Journals (Sweden)

Sara Maroske

2018-03-01

Full Text Available The transition from amateur to professional in natural history is generally regarded as having taken place in the nineteenth century, but landmark events such as the 1917 appointment of mycologist Johanna Westerdijk (1883–1961 as the first female professor in the Netherlands indicate that the pattern of change for women was more varied and delayed than for men. We investigate this transition in mycology, and identify only 43 women in the Western World who published scientific mycological literature pre-1900, of whom twelve published new fungal taxa. By charting the emergence of these women over time, and comparing the output of self-taught amateurs and university graduates, we establish the key role of access to higher education in female participation in mycology. Using a suite of strategies, six of the self-taught amateurs managed to overcome their educational disadvantages and name names — Catharina Dörrien (the first to name a fungal taxon, Marie-Anne Libert, Mary Elizabeth Banning, Élise-Caroline Bommer, Mariette Rousseau, and Annie Lorrain Smith. By 1900, the professional era for women in mycology was underway, and increasing numbers published new taxa. Parity with male colleagues in recognition and promotion, however, remains an ongoing issue. Key words: Amateurs, Fungi, Gender studies, History of science, Plant pathology

77 FR 59998 - Self-Regulatory Organizations; The Options Clearing Corporation; Advance Notice Relating to the...

Science.gov (United States)

2012-10-01

... portfolio at current prices by selling the net long positions and buying in the net short positions. The... Accounts, non-Proprietary X-M accounts, and internal non-proprietary cross-margining accounts. All such...

GEOGRAPHIC NAMES INFORMATION SYSTEM (GNIS) ...

Science.gov (United States)

The Geographic Names Information System (GNIS), developed by the U.S. Geological Survey in cooperation with the U.S. Board on Geographic Names (BGN), contains information about physical and cultural geographic features in the United States and associated areas, both current and historical, but not including roads and highways. The database also contains geographic names in Antarctica. The database holds the Federally recognized name of each feature and defines the location of the feature by state, county, USGS topographic map, and geographic coordinates. Other feature attributes include names or spellings other than the official name, feature designations, feature class, historical and descriptive information, and for some categories of features the geometric boundaries. The database assigns a unique feature identifier, a random number, that is a key for accessing, integrating, or reconciling GNIS data with other data sets. The GNIS is our Nation's official repository of domestic geographic feature names information.

On streamlining the Ukrainian names of plants. Information 7. Spelling the names of plant varieties.

Directory of Open Access Journals (Sweden)

В. М. Меженський

2016-07-01

Full Text Available Purpose. To analyse the practice of transliteration of the Ukrainian cultivar names and rendering foreign names by means of the Ukrainian language, as well as special aspects of cultivar names spelling in special literature. Results. Cultivar names as a special category require preservation of primary graphics or sound type in the other language. This can be achieved by direct inclusion of the original name to the Ukrainian text or by practical transcribing, but not by transliteration or translation. Otherwise, Ukrainian names should be transliterated for inclusion to the texts in Latin characters. Transcription/transliteration in both directions is performed from the source language, though, as practice shows, in some Ukrainian publications the Russian is wrongly used as an intermediary language. Some national scientific publications ignore the recommendations of the International Code of Nomenclature for Cultivated Plants that is not conducive to the success of scientific communication in the globalized world. Conclusions. The foreign names of plant varieties should be entered into the Ukrainian text keeping the original spelling or by means of practical transcription. The loan of foreign names is performed by transcribing directly from the source language; if the language doesn’t have the Latin alphabet, Latinized name transcription is acceptable. Recommendations of the International Code of Nomenclature for Cultivated Plants that concern graphic highlighting of the cultivar names in the text enclosing them in single quotation marks and writing each word of a cultivar name with a capital letter should necessarily be applied in the foreign-language publications and extended to the Ukrainian special literature, at least, in terms of the use of single quotation marks. Ukrainian names should be transliterated only in accordance with the regulations.

The Name Game.

Science.gov (United States)

Crawley, Sharon J.

Described is a game which provides a method for teaching students to locate cities and towns on a map. Students are provided with a list of descriptive phrases which stand for the name of a city, e.g., hot weather town (Summerville, Georgia); a chocolate candy bar (Hershey, Pennsylvania). Using a map, students must then try to find the name of a…

Annual Review of BPA-Funded Projects in Natural and Artificial Propagation of Salmonids, March 27-29, 1985, Holiday Inn Airport, Portland, Oregon.

Energy Technology Data Exchange (ETDEWEB)

United States. Bonneville Power Administration.

1985-04-01

The Fish and Wildlife Division of Bonneville Power Administration (BPA) hosted a meeting for contractors to present the results of fiscal year 1984 research conducted to implement the Northwest Power Planning Council's Fish and Wildlife Program. The meeting focused on those projects specifically related to natural and artificial propagation of salmonids. The presentations were held at the Holiday Inn Airport in Portland, Oregon, on March 27-29, 1985. This document contains abstracts of the presentations from that meeting. Section 1 contains abstracts on artificial propagation, fish health, and downstream migration, and Section 2 contains abstracts on natural propagation and habitat improvement. The abstracts are indexed by BPA Project Number and by Fish and Wildlife Program Measure. The registered attendees at the meeting are listed alphabetically in Appendix A and by affiliation in Appendix B.

Feeling-of-knowing for proper names.

Science.gov (United States)

Izaute, Marie; Chambres, Patrick; Larochelle, Serge

2002-12-01

The main objective of the presented study was to study feeling-of-knowing (FOK) in proper name retrieval. Many studies show that FOK can predict performance on a subsequent criterion test. Although feeling-of-knowing studies involve questions about proper names, none make this distinction between proper names and common names. Nevertheless, the specific character of proper names as a unique label referring to a person should allow participants to target precisely the desired verbal label. Our idea here was that the unique character of proper name information should result in more accurate FOK evaluations. In the experiment, participants evaluated feeling-of-knowing for proper and common name descriptions. The study demonstrates that FOK judgments are more accurate for proper names than for common names. The implications of the findings for proper names are briefly discussed in terms of feeling-of-knowing hypotheses.

A Doctor's Name as a Brand: A Nationwide Survey on Registered Clinic Names in Taiwan.

Science.gov (United States)

Chu, Feng-Yuan; Dai, Ying-Xiu; Liu, Jui-Yao; Chen, Tzeng-Ji; Chou, Li-Fang; Hwang, Shinn-Jang

2018-06-01

In countries where the private clinics of physicians can be freely named, registering a clinic with a physician's name is one way to make patients familiar with the physician. No previous study had investigated how clinics make use of this method of personal branding. Therefore, the current study analyzed 10,847 private physician Western medicine clinics in Taiwan. Of those clinics, 31.0% ( n = 3363) were named with a physician's full name, 8.9% ( n = 960) with a surname, and 8.1% ( n = 884) with a given name. The proportion of clinics registered with a physician's name was lower in rural areas (37.3%) than in urban (48.5%) and suburban areas (49.2%), respectively. Among clinics with only one kind of specialist, a physician's name was used most frequently in clinics of obstetrics and gynecology (64.9%), otorhinolaryngology (64.1%), and dermatology (63.4%). In Taiwan, fewer than half of clinics used a physician's name as a brand. The sociocultural or strategic factors and real benefits of doing so could be further studied in the future for a better understanding of healthcare services management.

The List of Available Names (LAN): A new generation for stable taxonomic names in zoology?

Science.gov (United States)

Alonso-Zarazaga, Miguel A; Fautin, Daphne Gail; Michel, Ellinor

2016-01-01

The List of Available Names in Zoology (LAN) is an inventory of names with specific scope in time and content, presented and approved in parts, and constituted as a cumulative index of names available for use in zoological nomenclature. It was defined in Article 79 in the fourth edition of the International Code of Zoological Nomenclature. The LAN is likely to gain importance with the development of the online Official Registry for Zoological Nomenclature (ZooBank) as it is potentially a source of many nomenclaturally certified names. Article 79 describes the deliberative process for adding large numbers of names to the LAN simultaneously, detailing steps and chronology for submission of a candidate Part to the LAN and consideration of a candidate Part by the public and Commission, but it is largely mute about the contents of a candidate Part. It does make clear that a name within the scope of a Part but not on the LAN has no nomenclatural standing, even if it had previously been considered available, thereby preventing long-forgotten names from displacing accepted ones and the accumulation of nomina dubia. Thus, for taxa on the LAN, nomenclatural archaeology - the resurrecting of old unused names to replace by priority names in current usage - will not be worthwhile. Beyond that, it has been unclear if Article 79 is intended to document every available name known within the scope of the Part, or if its intention is to pare the inventory of available names within the scope of the Part. Consideration by the Commission and two committees to deal with the LAN have defined steps to implement Article 79 with the latter intent. Procedures for consideration of a candidate Part are defined in a manual, published as an appendix in this volume.

Color Naming Experiment in Mongolian Language

Directory of Open Access Journals (Sweden)

Nandin-Erdene Osorjamaa

2015-11-01

Full Text Available There are numerous researches on color terms and names in many languages. In Mongolian language there are few doctoral theses on color naming. Cross cultural studies of color naming have demonstrated Semantic relevance in French and Mongolian color name Gerlee Sh. (2000; Comparisons of color naming across English and Mongolian Uranchimeg B. (2004; Semantic comparison between Russian and Mongolian idioms Enhdelger O. (1996; across symbolism Dulam S. (2007 and few others. Also a few articles on color naming by some Mongolian scholars are Tsevel, Ya. (1947, Baldan, L. (1979, Bazarragchaa, M. (1997 and others. Color naming studies are not sufficiently studied in Modern Mongolian. Our research is considered to be the first intended research on color naming in Modern Mongolian, because it is one part of Ph.D dissertation on color naming. There are two color naming categories in Mongolian, basic color terms and non- basic color terms. There are seven basic color terms in Mongolian. This paper aims to consider how Mongolian color names are derived from basic colors by using psycholinguistics associative experiment. It maintains the students and researchers to acquire the specific understanding of the differences and similarities of color naming in Mongolian and  English languages from the psycho-linguistic aspect.

Improved vocabulary production after naming therapy in aphasia: can gains in picture naming generalize to connected speech?

Science.gov (United States)

Conroy, Paul; Sage, Karen; Ralph, Matt Lambon

2009-01-01

Naming accuracy for nouns and verbs in aphasia can vary across different elicitation contexts, for example, simple picture naming, composite picture description, narratives, and conversation. For some people with aphasia, naming may be more accurate to simple pictures as opposed to naming in spontaneous, connected speech; for others, the opposite pattern may be evident. These differences have, in some instances, been related to word class (for example, noun or verb) as well as aphasia subtype. Given that the aim of picture-naming therapies is to improve word-finding in general, these differences in naming accuracy across contexts may have important implications for the potential functional benefits of picture-naming therapies. This study aimed to explore single-word therapy for both nouns and verbs, and to answer the following questions. (1) To what extent does an increase in naming accuracy after picture-naming therapy (for both nouns and verbs) predict accurate naming of the same items in less constrained spontaneous connected speech tasks such as composite picture description and retelling of a narrative? (2) Does the word class targeted in therapy (verb or noun) dictate whether there is 'carry-over' of the therapy item to connected speech tasks? (3) Does the speed at which the picture is named after therapy predict whether it will also be used appropriately in connected speech tasks? Seven participants with aphasia of varying degrees of severity and subtype took part in ten therapy sessions over five weeks. A set of potentially useful items was collected from control participant accounts of the Cookie Theft Picture Description and the Cinderella Story from the Quantitative Production Analysis. Twenty-four of these words (twelve verbs and twelve nouns) were collated for each participant, on the basis that they had failed to name them in either simple picture naming or connected speech tasks (picture-supported narrative and unsupported retelling of a narrative

27 CFR 5.34 - Brand names.

Science.gov (United States)

2010-04-01

... 27 Alcohol, Tobacco Products and Firearms 1 2010-04-01 2010-04-01 false Brand names. 5.34 Section... Spirits § 5.34 Brand names. (a) Misleading brand names. No label shall contain any brand name, which... officer finds that such brand name (when appropriately qualified if required) conveys no erroneous...

Dgroup: DG01664 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available /INN) D06070 ... Tenecteplase (USAN/INN) ... D05412 ... Monteplase (INN); Monteplase (genetical recombination) (JAN...) ... D05410 ... Pamiteplase (INN); Pamiteplase (genetical recombination) (JAN) D0825...6 ... Nateplase (INN) D03695 ... Desmoteplase (USAN/INN) D04665 ... Lanoteplase (USAN/INN); Lanoteplase (genetical re...combination) (JAN) D09814 ... Silteplase (INN); Silteplase (genetical recombination) (JAN) D09823 ... Duteplase (INN); Duteplase (genetica... DG01664 DGroup Tissue plasminogen activator (t-PA) -teplase ... D02837 ... Alteplase (USP/INN); Alteplase (geneti

Can Your Institution's Name Influence Constituent Response? An Initial Assessment of Consumer Response to College Names.

Science.gov (United States)

Treadwell, D. F.

2003-01-01

Presents names of college and universities unfamiliar to potential students. Finds that one cluster of respondents had a clear preference for geographic or aspirational names while a second cluster had a preference for proper names. Notes that there was an overall preference for proper names. (SG)

What’s In Your Name? Associated Meanings of the Common Filipino Names Among Young Filipinos

Directory of Open Access Journals (Sweden)

Shaira G. Castillo

2016-11-01

Full Text Available Name is important in knowing someone’s identity. By a person’s name someone can know his or her character. It is also possible that they bear a particular name because of their background and other factors that can lead to something important. This study aimed to find out the associative meanings of the most common Filipino male and female names among the Polytechnic University of the Philippines-Sta. Mesa students. Different factors such as character traits, physical appearance, and skills/talents were considered in determining meanings of the names. The study used quantitative and qualitative research approach, specifically the descriptive method, to analyze the gathered data. A selfadministered survey was distributed to 400 randomly selected respondents. General findings revealed that the respondents associated the most common Filipino male names in the same way regarding character traits and skills/talents. However, they have different associations to the male names in terms of physical appearance. On the other hand, the respondents associated the most common Filipino female names into similar character traits and physical appearance but associated them with different skills/talents. Results also revealed that the most common factors that influence the respondents’ associated meanings were relationships, experiences, popularity, and perception. The results imply that while young Filipinos associate similar character traits, physical appearances and skills to common Filipino names, they have different reasons in giving meanings to them.

What's in a Name ?The Effect of an Artist's Name on Aesthetic Judgements

OpenAIRE

Cleeremans, Axel; Ginsburgh, Victor; Klein, Olivier; Noury, Abdul Ghafar

2016-01-01

Both economists and art historians suggest that the name of the artist is important and belongs with the work. We carried out an experiment to explore the influence that the presence and knowledge of an artist’s name exert on aesthetic judgments. Forty participants (20 students majoring in psychology and 20 in art history) were asked to rank twelve works painted by different artists, some of which bore the name of their actual creators, others not. The results demonstrated that the presence o...

Fictional names and fictional discourse

OpenAIRE

Panizza, Chiara

2017-01-01

[eng] In this dissertation I present a critical study of fiction, focusing on the semantics of fictional names and fictional discourse. I am concerned with the issue of whether fictional names need to refer, and also with the related issue of whether fictional characters need to exist, in order to best account for our linguistic practices involving fictional names. Fictional names like ‘Sherlock Holmes’, ‘Anna Karenina’, ‘Emma Woodhouse’ and ‘Don Quixote of La Mancha’ ordinarily occur in diff...

Can You Say My Name?

DEFF Research Database (Denmark)

Erz, Antonia; Christensen, Bo T.

Whereas brand name research has focused on the semantic meaning or sounds of names, processing fluency lends further support to the idea that meaning goes beyond semantics. Extant research has shown that phonological fluency, i.e., the ease or difficulty with which people pronounce names, can...

27 CFR 7.23 - Brand names.

Science.gov (United States)

2010-04-01

... 27 Alcohol, Tobacco Products and Firearms 1 2010-04-01 2010-04-01 false Brand names. 7.23 Section... Beverages § 7.23 Brand names. (a) General. The product shall bear a brand name, except that if not sold under a brand name, then the name of the person required to appear on the brand label shall be deemed a...

Brand Reputation and the Cost of Capital: Evidence of Adopting a Brand Name as the Corporate Name

OpenAIRE

YiLin Wu

2011-01-01

This paper studies how the capital market perceives brand name adoption. I distinguish between brand adoption and radical type of corporate name change. A brand adoption name change occurs when the firm adopts one of its well-established brands as its new corporate name and a radical type occurs when the new name is semantically unrelated to firm history. Improved profitability and increased net investment accompany brand name adoption. After controlling for changes in the competing informati...

Ultra advanced projects. ; Naming hyper-hightech projects. (Cho) no tsuku project. ; Naming no shikumi

Energy Technology Data Exchange (ETDEWEB)

Goto, Y. (Ministry of International Trade and Industry, Tokyo (Japan))

1992-10-05

Significance of using 'super' for naming a project of technological development is discussed. Functions of naming are classified into (1) recognition, (2) display and (3) sales-promotion, whereby mechanism of naming of merchandise that is developed through the technique of 3 is considered. Further, the mechanism of naming is discussed in relation to marketing. It is pointed out that naming of merchandise is determined on the basis of (1) concept of planned goods and (2) marketing-mixes composed of goods, price, sales-roots and sales-promotion. The same mechanism works also in a project for technological development. Technical trends are caught and projects are targetted by taking supposed regimes into account, thereby the most suitable mix is formed. The mix in the technological development is assumed to be composed of purpose, specification, regime and sales-promotion. Two examples of the governmental projects by Ministry of International Trade and Industry, 'the big regime for research and development on industrial technologies' and 'the regime for development of the fundamental technologies in the next generation' are introduced and the significance of their naming is described. 2 tabs.

Cognitive components of picture naming.

Science.gov (United States)

Johnson, C J; Paivio, A; Clark, J M

1996-07-01

A substantial research literature documents the effects of diverse item attributes, task conditions, and participant characteristics on the case of picture naming. The authors review what the research has revealed about 3 generally accepted stages of naming a pictured object: object identification, name activation, and response generation. They also show that dual coding theory gives a coherent and plausible account of these findings without positing amodal conceptual representations, and they identify issues and methods that may further advance the understanding of picture naming and related cognitive tasks.

Dgroup: DG01707 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available gen activator (t-PA) ... D02837 ... Alteplase (USP/INN); Alteplase (genetical recombination) (JAN) ... D02947 ... Ani...streplase (USAN/INN) ... D05721 ... Reteplase (USAN/INN) ... D06070 ... Tenecteplase (USAN/INN) ... D05412 ... Monteplase (INN); Monteplase (genetic...al recombination) (JAN) ... D05410 ... Pamiteplase (INN); Pamiteplase (genetica... ... Lanoteplase (USAN/INN); Lanoteplase (genetical recombination) (JAN) ... D09814 ... Silteplase (INN); Silteplase (genetica...l recombination) (JAN) ... D09823 ... Duteplase (INN); Duteplase (genetical re

A Doctor’s Name as a Brand: A Nationwide Survey on Registered Clinic Names in Taiwan

Directory of Open Access Journals (Sweden)

Feng-Yuan Chu

2018-06-01

Full Text Available In countries where the private clinics of physicians can be freely named, registering a clinic with a physician’s name is one way to make patients familiar with the physician. No previous study had investigated how clinics make use of this method of personal branding. Therefore, the current study analyzed 10,847 private physician Western medicine clinics in Taiwan. Of those clinics, 31.0% (n = 3363 were named with a physician’s full name, 8.9% (n = 960 with a surname, and 8.1% (n = 884 with a given name. The proportion of clinics registered with a physician’s name was lower in rural areas (37.3% than in urban (48.5% and suburban areas (49.2%, respectively. Among clinics with only one kind of specialist, a physician’s name was used most frequently in clinics of obstetrics and gynecology (64.9%, otorhinolaryngology (64.1%, and dermatology (63.4%. In Taiwan, fewer than half of clinics used a physician’s name as a brand. The sociocultural or strategic factors and real benefits of doing so could be further studied in the future for a better understanding of healthcare services management.

Naming analog clocks conceptually facilitates naming digital clocks

NARCIS (Netherlands)

Meeuwissen, M.H.W.; Roelofs, A.P.A.; Levelt, W.J.M.

2004-01-01

Naming digital clocks (e.g., 2:45, say "quarter to three") requires conceptual operations on the minute and hour information displayed in the input for producing the correct relative time expression. The interplay of these conceptual operations was investigated using a repetition priming paradigm.

Analisi Pengaruh Store Name, Brand Name, Dan Price Discounts Terhadap Purchase Intentions Konsumen Infinite Tunjungan Plaza

OpenAIRE

Gunawan, Andy

2013-01-01

Andy Gunawan:SkripsiAnalisis pengaruh store name, brand name dan price discounts terhadap purchase intention konsumen infnite tunjungan plaza Di era globalisasi ini, persaingan dagang antara Perusahaan – Perusahaan baik lokal maupun global menjadi semakin ketat, oleh karena itu Perusahaan selalu berusaha untuk meningkatkan ketertarikan minat beli konsumen. Beberapa variabel yang menjadi fokus Perusahaan adalah store name, brand name, dan price discount. Tujuan penelitian ini adalah untuk meng...

Current Trends in Name Giving among Bulgarians: A Study of the Names of Newborns in the Sofia Region

Directory of Open Access Journals (Sweden)

Maya Vlahova-Angelova

2017-11-01

Full Text Available The article showcases a large-scale study of the modern Bulgarian anthroponymic system conducted by the Applied Onomastics section of the Bulgarian Academy of Sciences Institute for the Bulgarian Language (IBL with the aim of revealing the current trends in the choice of personal names by the Bulgarians at the beginning of the 21st century. The study focuses on personal names of Bulgarians born in 2010 in the Sofia region, as extracted from the Unified System of Civil Registration and Administrative Services of the Population of the Republic of Bulgaria. The total number of births this year was 1,005, of which 51.5% were boys, 48.5% were girls. Statistical and linguistic analysis of names allowed to measure the popularity of both individual personal names and different name types. It shows the quantitative ratio between most commonly chosen names and those of a singular use in relation to the total number of anthroponyms in the corpus, and proves that the male names are more sustainable in terms of usage than female. The derivational and etymological analysis of personal names helped to identify the productive word-formation types of names and the so-called “unisex names,” to distinguish between the native Bulgarian and the borrowed foreign names, as well as to classify graphic and phonetic variants of the same anthroponym. A number of quantitative comparisons were made between certain categories of names, for example, between compound (two-stem personal names (such as Miroslav and simple names (such as Biser, showing the ratio of the two-component personal names (such as Anna-Maria to the rest of the anthroponyms. It was found that the Bulgarian anthroponymic system in the beginning of the 21st century is more open to the non-adapted foreign names (like Mishel, Nancy, shows wider usage of diminutive “unisex names” (Moni, Stephy, Toni, as well as the growing popularity of shortened forms used as official names (Alex, Boni, Pepi, and the

Name fashion dynamics and social class

NARCIS (Netherlands)

Bloothooft, G.; Schraagen, M.P.

2011-01-01

Modern parents in The Netherlands choose the first names they like for their children. In this decision most follow fashion and as a typical property of fashion, many popular names now have a life cycle of only one generation. Some names show a symmetry between rise and fall of the name, but most

Name signs in Danish Sign Language

DEFF Research Database (Denmark)

Bakken Jepsen, Julie

2018-01-01

in spoken languages, where a person working as a blacksmith by his friends might be referred to as ‘The Blacksmith’ (‘Here comes the Blacksmith!’) instead of using the person’s first name. Name signs are found not only in Danish Sign Language (DSL) but in most, if not all, sign languages studied to date....... This article provides examples of the creativity of the users of Danish Sign Language, including some of the processes in the use of metaphors, visual motivation and influence from Danish when name signs are created.......A name sign is a personal sign assigned to deaf, hearing impaired and hearing persons who enter the deaf community. The mouth action accompanying the sign reproduces all or part of the formal first name that the person has received by baptism or naming. Name signs can be compared to nicknames...

27 CFR 4.33 - Brand names.

Science.gov (United States)

2010-04-01

... 27 Alcohol, Tobacco Products and Firearms 1 2010-04-01 2010-04-01 false Brand names. 4.33 Section... THE TREASURY LIQUORS LABELING AND ADVERTISING OF WINE Labeling Requirements for Wine § 4.33 Brand names. (a) General. The product shall bear a brand name, except that if not sold under a brand name...

Improved Vocabulary Production after Naming Therapy in Aphasia: Can Gains in Picture Naming Generalise to Connected Speech?

Science.gov (United States)

Conroy, Paul; Sage, Karen; Ralph, Matt Lambon

2009-01-01

Background: Naming accuracy for nouns and verbs in aphasia can vary across different elicitation contexts, for example, simple picture naming, composite picture description, narratives, and conversation. For some people with aphasia, naming may be more accurate to simple pictures as opposed to naming in spontaneous, connected speech; for others,…

27 CFR 41.251 - Change in name.

Science.gov (United States)

2010-04-01

... corporate name. When there is a change in the corporate name of an importer of processed tobacco, the... 27 Alcohol, Tobacco Products and Firearms 2 2010-04-01 2010-04-01 false Change in name. 41.251... name. (a) Change in individual name. When there is a change in the name of an individual operating...

Assigned value improves memory of proper names.

Science.gov (United States)

Festini, Sara B; Hartley, Alan A; Tauber, Sarah K; Rhodes, Matthew G

2013-01-01

Names are more difficult to remember than other personal information such as occupations. The current research examined the influence of assigned point value on memory and metamemory judgements for names and occupations to determine whether incentive can improve recall of proper names. In Experiment 1 participants studied face-name and face-occupation pairs assigned 1 or 10 points, made judgements of learning, and were given a cued recall test. High-value names were recalled more often than low-value names. However, recall of occupations was not influenced by value. In Experiment 2 meaningless nonwords were used for both names and occupations. The name difficulty disappeared, and value influenced recall of both names and occupations. Thus value similarly influenced names and occupations when meaningfulness was held constant. In Experiment 3 participants were required to use overt rote rehearsal for all items. Value did not boost recall of high-value names, suggesting that differential processing could not be implemented to improve memory. Thus incentives may improve memory for proper names by motivating people to engage in selective rehearsal and effortful elaborative processing.

A radiographic anthology of vertebral names

International Nuclear Information System (INIS)

Yochum, T.R.; Hartley, B.; Thomas, D.P.; Guebert, G.M.

1987-01-01

A total of 88 such named vertebrae have been extracted from the literature. With so many names from scattered sources, the authors collated them in a single presentation. A description is given and the anatomical and pathogenic reasons for the appearances are considered. A list of conditions associated with each named vertebra accompanies the descriptive paragraph. The named vertebrae are presented in alphabetical order

Development of ZnO:Al-based transparent contacts deposited at low-temperature by RF-sputtering on InN layers

Energy Technology Data Exchange (ETDEWEB)

Fernandez, S. [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Avda. Complutense 22, 28040 Madrid (Spain); Naranjo, F.B.; Valdueza-Felip, S. [Grupo de Ingenieria Fotonica, Departamento de Electronica, Escuela Politecnica Superior, Universidad de Alcala Campus Universitario, 28871 Alcala de Henares, Madrid (Spain); Abril, O. de [ISOM and Departamento de Fisica Aplicada, Escuela Tecnica Superior de Ingenieros de Telecomunicacion, Universidad Politenica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain)

2012-03-15

Nitride semiconductors (Al,Ga,In)N attain material properties that make them suitable for photovoltaic and optoelectronics devices to be used in hard environments. These properties include an energy gap continuously tuneable within the energy range of the solar spectrum, a high radiation resistance and thermal stability. The developing of efficient devices requires contacts with low resistivity and high transmittance in visible region. ZnO:Al (AZO) emerges as a feasible candidate for transparent contact to nitride semiconductors, taking advantage of its low resistivity, high transparency in visible wavelengths and a very low lattice mismatch with respect to nitride semiconductors. This work presents a study of the applications of AZO films deposited at low-temperature by RF magnetron sputtering as transparent contact for InN layers. The optimization of AZO conditions deposition lead to the obtaining of contacts which shows an ohmic behaviour for the as-deposited layer, regardless the thickness of the ZnO:Al contact layer. Specific contact resistances of 1.6 {omega}.cm{sup 2} were achieved for the contact with 90 nm thick ZnO:Al layer without any post-deposition treatment (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Medieval Karelian Calendar Names: A Cognitive Perspective

Directory of Open Access Journals (Sweden)

Irina A. Kyurshunova

2013-11-01

Full Text Available The article focuses on calendar personal names recorded in the 15–17th centuries Russian and Swedish manuscripts written in Karelia. Revealing the cognitive potential of this historical stratum of names, the author analyzes the frequency of full (official and modified forms of calendar names, the regional peculiarities of their linguistic adaptation, their ethnolinguisitic and social status, as well as the functioning of calendar names in the regional onomastic system. The analysis shows that the calendar onomasticon holds the leading positions, which reflects important axiological and mental shifts in the people’s culture. The list of most frequent Christian names of the region generally coincides with the onomastic data related to other Russian territories of the same period. The conservation of the name nomenclature is due to family traditions, namely, to familial practices of naming. However, the adaptation and distribution of names display some regional features, particularly in the frequency of different groups of anthroponyms. The peripheral situation of the region and the presence of Balto-Fennic population which adapted the Russian calendar athroponymicon determined the “conservatism” of the calendar names nomenclature: for naming, they selected the names which were better adapted and more extensively used among Russians. The formation of modified names depended mostly on the morphemic structure of the Russian language, regional features being relatively insignificant. The frequency of modified forms of names correlates with the genre of the manuscript and the scribe’s arbitrariness.

What's in a name? Group fitness class names and women's reasons for exercising.

Science.gov (United States)

Brown, Theresa C; Miller, Bridget M; Adams, Bailey M

2017-01-01

The benefits of intrinsic exercise motivation are well recognized, yet extrinsically focused group-fitness class names/descriptions dominate the fitness industry. To explore the impact of how fitness classes are marketed, women (N = 389) were asked to indicate their preference for either intrinsically or extrinsically focused fitness classes based on title/description. Participants who favored intrinsic class names/descriptions were more likely to report greater interest/enjoyment, perceived competence, and greater effort and report exercising for health/fitness-related reasons. Those favoring extrinsic class names/descriptions were more likely to experience tension/pressure when exercising and report exercising for appearance/weight-related reasons. The results demonstrate the importance of wording when marketing fitness classes.

Dgroup: DG01709 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available omiparin (USAN); Semuloparin (USAN); Heparin (BAN) ... D02112 ... Heparin sodium (JP17/USP/INN); Parnaparin sodium... (INN) ... D04427 ... Heparin calcium (JP17); Nadroparin calcium (INN) ... D03674 ... Enoxaparin sodium (JAN/USAN/...INN) ... D04977 ... Parnaparin sodium (JP17) ... D02980 ... Ardeparin sodium (USAN/INN) ... D03337 ... Reviparin sodiu...m (JAN) ... D03353 ... Dalteparin sodium (JAN/USAN/INN) ... D03673 ... Deligoparin sodium... (USAN/INN) ... D06398 ... Tinzaparin sodium (USAN) ... D09860 ... Adomiparin sodium (USAN); Semuloparin sodium (USAN/INN); Ardeparin sodium

Amerindian names of Colombian palms (Palmae

Directory of Open Access Journals (Sweden)

Diana Marmolejo

2014-03-01

Full Text Available A glossary of 1276 Amerindian names or name variants of palms is presented, representing at least 121 species in 64 aboriginal languages of Colombia. The species with documented names in the largest number of languages are Bactris gasipaes, Oenocarpus bataua, Mauritia flexuosa,Euterpe precatoria, andAstrocaryum chambira, which are five of the most used palms in South America. The languages with the largest number of named species are uitoto (48, tikuna (47, muinane (43, siona (34, sikuani (31 and miraña (30. These figures reflect the detailed studies carried out with these ethnic groups, besides the palm diversity of their territories and their knowledge about it. The names are presented in three separate lists –arranged by species, by language, and a global list of names that includes references for each individual record.

Distribution of air pollutants in the Inn Valley atmosphere during high concentration events in winter 2006

International Nuclear Information System (INIS)

Schnitzhofer, R.; Norman, M; Dunkl, J.; Wistaler, A.; Hansel, A.; Neininger, B.; Gohm, A.

2006-01-01

Full text: The goal of the INNOX field campaign, which took place during January and February 2006 near the town of Schwaz, was to obtain a three-dimensional picture of the spatial distribution of air pollutants in the Inn Valley during wintertime. For this purpose continuous ground based measurements and, on six chosen days, vertical profiles within the lowest 200 m above ground level (AGL) of the valley atmosphere of certain VOCs (benzene, toluene, etc.) and CO were performed using a proton-transfer-reaction mass spectrometry instrument (PTR-MS). For the soundings a 200-m long teflon line was fixed on a tethered balloon through which the air was sucked to the PTR-MS instrument and to a CO analyser. Next to the inlet on the tethered balloon meteorological data, such as air temperature, pressure, wind, were measured as well. Above the lowest 200 m AGL a research aircraft from MetAir AG (Switzerland), equipped with various instruments for in-situ measurements of air pollutants and meteorological data, was operated. A typical flight pattern consisted of five vertical cross sections between about 150 to 2500 m AGL and lasted about three hours. Altogether 25 hours of aircraft measurements were carried out on six different days. The combination of low-level balloon measurements and upper-level aircraft observations yields vertical profiles of various parameters which cover the whole valley atmosphere. Preliminary results which show strong vertical but also horizontal gradients of air pollutant concentrations will be presented. (author)

Formulation of EPICS record naming conventions in J-PARC linac and RCS. Build process of unique and standardized name

International Nuclear Information System (INIS)

Fukuta, Shinpei; Kawase, Masato; Kikuzawa, Nobuhiro; Watanabe, Kazuhiko; Sakaki, Hironao; Takahashi, Hiroki

2011-02-01

J-PARC (Japan Proton Accelerator Research Complex) accelerator devices are controlled by the use of the software called EPICS (Experimental Physics and Industrial Control System). The unique name called an EPICS record is given to a control signal and data acquisition, Accelerator device control is achieved using the EPICS record. The requirement for the EPICS record name is 2 points; (1) no overlap of the EPICS record name, (2) the control contents can be easily imagined from the EPICS record name. To manage the EPICS record using relational database for the information management of the accelerator device in J-PARC, the naming structure is required so that a mechanical process can be performed easily. It was necessary to standardize the EPICS record name and the EPICS record structure to achieve these requirements. Therefore, we have formulated a guideline called 'EPICS record naming conventions' to decide to an EPICS record name uniquely and standardization. The abbreviated key word list of the accelerator devices and the control signal that compose the EPICS record name is appended to the EPICS record naming conventions. (author)

Number names and number understanding

DEFF Research Database (Denmark)

Ejersbo, Lisser Rye; Misfeldt, Morten

2014-01-01

This paper concerns the results from the first year of a three-year research project involving the relationship between Danish number names and their corresponding digits in the canonical base 10 system. The project aims to develop a system to help the students’ understanding of the base 10 syste...... the Danish number names are more complicated than in other languages. Keywords: A research project in grade 0 and 1th in a Danish school, Base-10 system, two-digit number names, semiotic, cognitive perspectives....

The history of Latin teeth names.

Science.gov (United States)

Šimon, František

2015-01-01

This paper aims to give an account of the Latin naming of the different types of teeth by reviewing relevant historical and contemporary literature. The paper presents etymologies of Latin or Greek teeth names, their development, variants and synonyms, and sometimes the names of their authors. The Greek names did not have the status of official terms, but the Latin terms for particular types of teeth gradually established themselves. Names for the incisors, canines and molars are Latin calques for the Greek ones (tomeis, kynodontes, mylai), dens serotinus is an indirect calque of the Greek name (odús) opsigonos, and the term pre-molar is created in the way which is now common in modern anatomical terminology, using the prefix prae- = pre and the adjective molaris. The Latin terms dentes canini and dentes molares occur in the Classical Latin literature, the term (dentes) incisivi is found first time in medieval literature, and the terms dentes premolares and dens serotinus are modern-age ones.

Exploration history and place names of northern East Greenland: Colophon, abstract, introduction, official place names in Greenland

Directory of Open Access Journals (Sweden)

Higgins, Anthony K.

2010-12-01

Full Text Available The first recorded landing by Europeans on the coast of northern East Greenland (north of 69°N was that of William Scoresby Jr., a British whaler, in 1822. This volume includes a chronological summary of the pioneer 19th century exploration voyages made by British, Danish, Norwegian, Swedish, French and German expeditions – all of whom reported that the region had previously been occupied by the Inuit or Eskimo; also included are brief outlines of the increasing number of government and privately sponsored expeditions throughout the 20th century, whose objectives included cartography, geology, zoology, botany, trapping and the ascent of the highest mountain summits. In 1934 the Place Name Committee for Greenland was established, the tasks of which included a review of all place names hitherto recorded on published maps of Greenland, their formal adoption in danicised form, and the approval or rejection of new name proposals. In northern East Greenland, by far the largest numbers of new place names were those proposed by scientists associated with Lauge Koch’s geological expeditions that lasted from 1926 until 1958. This volume records the location and origin of more than 3000 officially approved place names as well as about 2650 unapproved names.The author’s interest in the exploration history and place names of northern East Greenland started in 1968, when the Geological Survey of Greenland initiated a major five-year geological mapping programme in the Scoresby Sund region. Systematic compilation of names began about 1970, initially with the names given by William Scoresby Jr., and subsequently broadened in scope to include the names proposed by all expeditions to northern East Greenland. The author has participated in 16 summer mapping expeditions with the Survey to northern East Greenland. Publication of this volume represents the culmination of a lifetime working in the Arctic.

On the History of the Name Ruslan

Directory of Open Access Journals (Sweden)

Roza Yu. Namitokova

2016-12-01

Full Text Available The authors postulate that there exists a common stock of Russian personal names resulting from a partial blending of national anthroponymicons. The main part of the paper focuses on the history of the personal name Ruslan which has etymological ties with the widespread Turkic name Arslan having the pre-onomastic meaning ‘lion’. The authors study the variation of the name in Russian folklore and in the 15th–17th centuries documents and historical sources. They also pay particular attention to the role of Pushkin’s poem Ruslan and Ludmila in the formation of the associative background of the studied name and to various onomastic derivatives, the latter include patronyms, surnames and the female name Ruslana. The author conclude that the name Ruslan became especially popular in Soviet and post-Soviet periods when it acquired a specific “semantic aura”, namely, in Caucasus where Ruslan became a kind of mark of Russian identity and, thus, contributed to the unification of the anthroponymic space. This conclusion was verified in the course of a survey done among 40 respondents representing different peoples of Caucasus. For most respondents the name has positive connotations and is associated with the Turkic name Arslan and the name of Pushkin’s character. However, some respondents consider it as a “non-Muslim”, Russian name and point out that it is often perceived as such outside Russia. The history of the name Ruslan and the ways of its transonymisation can be an interesting object for further research, especially due to the emergence of new communication technologies and onomastic discourses.

Dgroup: DG01493 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available utide, -natide ... D04121 ... Exenatide (JAN/USAN/INN) ... D06404 ... Liraglutide (USAN/INN); Liraglutide (genetical r...ecombination) (JAN) ... D09729 ... Lixisenatide (JAN/INN) ... D08843 ... Albiglutide (USAN); Albiglutide (genetical ...recombination) (JAN) ... D09889 ... Dulaglutide (USAN/INN); Dulaglutide (genetical re...combination) (JAN) ... D09723 ... Taspoglutide (USAN/INN) D10025 ... Semaglutide (USAN/INN); Semaglutide (genetical

Precedent Names of Chinese National Culture

Directory of Open Access Journals (Sweden)

Валентина Алексеевна Ленинцева

2015-12-01

Full Text Available The article presents an analysis of precedent names as symbols of precedent phenomena in the material and spiritual culture of the Chinese. An evaluation of daily events and the attitude of the Chinese towards the world are reflected in the vocabulary of their language. The symbols of precedent phenomena can be proper names (anthroponomy, names of places, the date, as well as figurative and expressive means of language (idioms, sayings. Precedent names as symbols of precedent phenomena vividly and accurately capture the above-mentioned points, and encompass almost all spheres of life, history and spiritual development. The subject of our study are national precedent phenomena that define the ethno-cultural specificity, reflecting the history and culture of the Chinese people and their national character. Representatives of different cultures have different perceptions of the same precedent phenomena. Inadequate understanding of national invariants of precedent phenomena is often the source of communication failures. The aim of this paper is to highlight precedent names as a symbol of precedent phenomena in the discourse of the Chinese linguocultural community. For this purpose a classification of precedent names in Chinese was carried out. Precedent names which play an important role in shaping the Chinese national consciousness were taken from the Chinese-Russian Dictionary.

27 CFR 19.165 - Trade names.

Science.gov (United States)

2010-04-01

... 27 Alcohol, Tobacco Products and Firearms 1 2010-04-01 2010-04-01 false Trade names. 19.165 Section 19.165 Alcohol, Tobacco Products and Firearms ALCOHOL AND TOBACCO TAX AND TRADE BUREAU, DEPARTMENT... Trade names. (a) Operating permits. Where a trade name is to be used in connection with the operations...

Official Naming in Hå, Klepp and Time

Directory of Open Access Journals (Sweden)

Inge Særheim

2012-08-01

Full Text Available Toponyms localize, reflect and give information about historical traditions and various phenomena in an area. They form part of the local heritage and culture. The relationship between place names, heritage and identity is often underlined in guidelines regarding official naming of streets and roads. In what way is heritage and local identity reflected in the road names of the three municipalities Hå, Klepp and Time (Southwest-Norway, and how is the special character of this area expressed in the names? More than half of the official road names in the three municipalities are either identical with a local toponym, or they consist of a word for ‘road’ and a local toponym (or an appellative describing the location. This shows that there is a strong commitment to base the official naming on local tradition and thus contribute to identity. Quite a few elements from the dialect, e.g. special pronunciation, grammatical forms or local words, appear in the names, especially in the road names from Hå, reflecting that the names are part of the local culture, and due to the fact that the dialect is unique. Consistency is a challenge, however; the same word is sometimes spelled in different ways in different names. It appears that, with some exceptions, cultural heritage and local tradition have been preferred principles and guidelines with regard to naming of roads in the three municipalities, due to a consciousness that heritage and tradition create identity.

WHAT’S IN A NAME: The Amateur‘s View of Good Practices in Naming an Online Educational Program

Directory of Open Access Journals (Sweden)

Michael J. ROSZKOWSKI

2013-07-01

Full Text Available Branding is considered to be particularly important in the marketing of online educational programs. A critical step to establishing the brand is naming the product appropriately. To this end, one can secure the services of professionals or rely on a do-it-yourself approach. The research reported here aimed to identify the features that non-professionals (graduate students consider to be important in the name for an online educational product, and to compare these to the recommendations made by naming professionals (as reported in the literature. A survey directed at current and prospective graduate students at a traditional university asked about the desirability of 16 characteristics in the name of a new line of online courses. The six characteristics that were deemed most critical are (in order of importance: self-explanatory, memorable, easy to pronounce, has appealing associations, suggests/hints at the key features, and short. These are the same features that professionals in the business of creating new product names generally consider as best practices in creating a name. The results show that contrary to the concerns expressed by some practitioners in the naming industry, college-educated individuals who do not create names for a living nonetheless demonstrate an awareness and appreciation for the features of a good name in an Internet-based course delivery system.

Recommended conservation of the names Streptococcus sanguis, Streptococcus rattus, Streptococcus cricetus, and seven other names included in the Approved Lists of Bacterial Names. Request for an opinion

DEFF Research Database (Denmark)

Kilian, Mogens

2001-01-01

With reference to the first Principle of the International Code of Nomenclature of Bacteria, which emphasizes stability of names, it is proposed that the original names Streptococcus sanguis, Streptococcus rattus, Streptococcus cricetus, Erwinia ananas, Eubacterium tarantellus, Lactobacillus sake......, Nitrosococcus oceanus, Pseudomonas betle, Rickettsia canada and Streptomyces rangoon, all included in the Approved Lists of Bacterial Names, be conserved. Request for an Opinion...

Packaging of pharmaceuticals: still too many dangers but several encouraging initiatives.

Science.gov (United States)

2007-06-01

(1) In 2006 in France, several drugs sold in poorly designed packaging exposed patients to a risk of serious adverse effects. (2) In 2006, Prescrire used a standardised methodology to examine the packaging of all new pharmaceutical products (656 different boxes) assessed in the New Products section of our French edition, la revue Prescrire. About 75% of these boxes contained tablets or capsules, mostly in blister packs. (3) Poor labelling remains a major problem. The international nonproprietary names (INN) is hard to spot on most boxes of patented brand-name drugs and is often overshadowed by the brand name. The primary packaging of many products does not even include the INN. (4) Two particularly ambiguous types of labelling are becoming more common on blister packs: pre-cut multiple-unit blister packs on which the labelling is truncated when a unit blister is removed; and blister packs on which the labelling spans two blisters, creating a risk of overdose. (5) The use of colours is frequently inappropriate. In particular, irrelevant information is often highlighted unnecessarily, while other, important information is barely visible. (6) Too many devices for oral administration create a risk of misuse. Very few are graduated in units of weight. Most are graduated in millilitres, obliging caregivers to use conversion charts and thus creating a risk of dosing errors. Devices graduated in kg bodyweight can also lead to dosing errors. (7) The labelling of some injectable drugs is barely legible. The various models of plastic ampoules, that are gradually replacing glass ampoules, can represent a danger because they resemble other plastic ampoules containing products administered by different routes. Packaging that does not provide a syringe or needle can cause problems for caregivers and represents another potential source of error. (8) Many of the patient information leaflets examined in 2006 had the same flaws as previously observed, i.e. uneven information quality

27 CFR 40.511 - Change in name.

Science.gov (United States)

2010-04-01

... corporate name. When there is a change in the corporate name of a manufacturer of processed tobacco, the... 27 Alcohol, Tobacco Products and Firearms 2 2010-04-01 2010-04-01 false Change in name. 40.511... PROCESSED TOBACCO Manufacture of Processed Tobacco Changes After Qualification § 40.511 Change in name. (a...

Dictionary of Minor Planet Names

CERN Document Server

Schmadel, Lutz D

2007-01-01

Dictionary of Minor Planet Names, Fifth Edition, is the official reference for the field of the IAU, which serves as the internationally recognised authority for assigning designations to celestial bodies and any surface features on them. The accelerating rate of the discovery of minor planets has not only made a new edition of this established compendium necessary but has also significantly altered its scope: this thoroughly revised edition concentrates on the approximately 10,000 minor planets that carry a name. It provides authoritative information about the basis for all names of minor planets. In addition to being of practical value for identification purposes, this collection provides a most interesting historical insight into the work of those astronomers who over two centuries vested their affinities in a rich and colorful variety of ingenious names, from heavenly goddesses to more prosaic constructions. The fifth edition serves as the primary reference, with plans for complementary booklets with newl...

27 CFR 1.40 - Change of name.

Science.gov (United States)

2010-04-01

... 27 Alcohol, Tobacco Products and Firearms 1 2010-04-01 2010-04-01 false Change of name. 1.40... Amendment and Duration of Basic Permits § 1.40 Change of name. In the event of any change in the name (trade or corporate name) of a permittee, or, in the event a permittee desires to engage in operations under...

Dgroup: DG01491 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available copolamine butylbromide (JP17) ... D01463 ... Diponium bromide (JAN/INN) D01491 ... Butropium bromide (JP17/INN) ... ...ide (JP17/INN) D01875 ... Tiquizium bromide (JAN/INN) ... D01929 ... Tiotropium bromide ...hydrate (JAN) ... D01946 ... Oxitropium bromide (JAN/INN) D01976 ... N-Methylscopolamine methylsulfate (JAN) ... D02212 ... Ipratropium... bromide (USAN); Ipratropium bromide hydrate (JP17) ... D02417 ... Flutropium bromide (JAN) D025...N/USAN/INN) ... D08838 ... Acotiamide hydrochloride (USAN); Acotiamide hydrochloride hydrate (JAN) ... D09402 ... Darotropium bromide (USAN/INN) Neuropsychiatric agent ...

MULTIPATH COMMUNICATIONS USING NAMES

OpenAIRE

Purushothama, Rashmi

2011-01-01

Increased host mobility, and multi-homing make IP address management very complex in applications. Due to host mobility, the IP address of a host may change dynamically, and also frequently. Multi-homing leads to multiple IP addresses for a single host. Name-based socket is a solution to address the complex IP address management. It relieves the applications from the overhead, and moves it to the operating system. It uses a constant name, instead of an IP address to establish a connection, th...

A radiographic anthology of vertebral names.

Science.gov (United States)

Yochum, T R; Hartley, B; Thomas, D P; Guebert, G M

1985-06-01

There are many conditions of the spine to which various authors have applied descriptive names. This paper, an extensive review of the literature, provides the first complete source for such named vertebrae. Included are 88 names covering all categories of bone disease. A brief description of the radiographic appearance and its pathogenesis is provided for each, along with a consideration of the disease processes which may produce the appearance.

Naming as Strategic Communication: Understanding Corporate Name Change through an Integrative Framework Encompassing Branding, Identity and Institutional Theory

DEFF Research Database (Denmark)

Schmeltz, Line; Kjeldsen, Anna Karina

2016-01-01

This article presents a framework for understanding corporate name change as strategic communication. From a corporate branding perspective, the choice of a new name can be seen as a wish to stand out from a group of similar organizations. Conversely, from an institutional perspective, name change...

Fast, Inclusive Searches for Geographic Names Using Digraphs

Science.gov (United States)

Donato, David I.

2008-01-01

An algorithm specifies how to quickly identify names that approximately match any specified name when searching a list or database of geographic names. Based on comparisons of the digraphs (ordered letter pairs) contained in geographic names, this algorithmic technique identifies approximately matching names by applying an artificial but useful measure of name similarity. A digraph index enables computer name searches that are carried out using this technique to be fast enough for deployment in a Web application. This technique, which is a member of the class of n-gram algorithms, is related to, but distinct from, the soundex, PHONIX, and metaphone phonetic algorithms. Despite this technique's tendency to return some counterintuitive approximate matches, it is an effective aid for fast, inclusive searches for geographic names when the exact name sought, or its correct spelling, is unknown.

Planning levels in naming and reading complex numerals

NARCIS (Netherlands)

Meeuwissen, M.H.W.; Roelofs, A.P.A.; Levelt, W.J.M.

2003-01-01

On the basis of evidence from studies of the naming and reading of numerals, Ferrand (1999) argued that the naming of objects is slower than reading their names, due to a greater response uncertainty in naming than in reading, rather than to an obligatory conceptual preparation for naming, but not

High Temperature Materials Laboratory, Eleventh Annual Report: October 1997 through September 1998

Energy Technology Data Exchange (ETDEWEB)

Pasto, A.E.; Russell, B.J.

2000-03-01

The High Temperature Materials Laboratory (HTML) has completed its eleventh year of operation as a designated US Department of Energy User Facility at the Oak Ridge National Laboratory. This document profiles the historical growth of the HTML User and Fellowship Programs since their inception in 1987. Growth of the HTML programs has been demonstrated by the number of institutions executing user agreements and by the number of days of instrument use (user days) since the HTML began operation.A total of 522 agreements (351 industry,156 university,and 15 other federal agency) are now in effect (452 nonproprietary and 70 proprietary). This represents an increase of 75 user agreements since the last reporting period (for FY 1997). A state-by-state summary of the nonproprietary user agreements is given in Appendix A. Forty-six states are represented. During FY 1998, the HTML User Program evaluated 80 nonproprietary proposals (32 from industry, 45 from universities, and 3 from other government facilities) and several proprietary proposals. Appendix B provides a detailed breakdown of the nonproprietary proposals received during FY 1998. The HTML User Advisory Committee approved about 95% of those proposals, sometimes after the prospective user revised the proposal based on comments from the committee. This annual report discusses activities in the individual user centers as well as plans for the future. It also gives statistics about users, proposals, and publications as well as summaries of the nonproprietary research projects active during 1998.

High Temperature Materials Laboratory eight and ninth annual reports, October 1994 through September 1996

Energy Technology Data Exchange (ETDEWEB)

Pasto, A.E.; Russell, B.J.

1997-10-01

The High Temperature Materials Laboratory (HTML) has completed its ninth year of operation as a designated US Department of Energy User Facility at the Oak Ridge National Laboratory. This document profiles the historical growth of the HTML User and Fellowship Programs since their inception in 1987. Growth of the HTML programs has been demonstrated by the number of institutions executing user agreements, and by the number of days of instrument use (user days) since the HTML began operation. A total of 276 nonproprietary agreements (135 industry, 135 university, and 6 other federal agency) and 56 proprietary agreements are now in effect. This represents an increase of 70 nonproprietary user agreements since the last reporting period (for FY 1994). A state-by-state summary of these nonproprietary user agreements is given in Appendix A, and an alphabetical listing is provided in Appendix B. Forty-four states are represented by these users. During FY 1995 and 1996, the HTML User Program evaluated 145 nonproprietary proposals (62 from industry, 82 from universities, and 1 from other government facilities) and several proprietary proposals. The HTML User Advisory Committee approved about 95% of those proposals, frequently after the prospective user revised the proposal based on comments from the committee. This annual report discusses activities in the individual user centers, as well as plans for the future. It also gives statistics about users, proposals, and publications as well as summaries of the nonproprietary research projects active during 1995 and 1996.

Dgroup: DG01501 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available N) ... D03077 ... Benazeprilat (USAN/INN) D03440 ... Ceronapril (USAN/INN) D03756 ... Indolapril hydrochloride (USAN) ... (USAN) ... D00383 ... Trandolapril (JAN/INN) ... DG00342 ... Spirapril ... D08529 ... Spirapril (INN) ... D03765 ... Spirapril ...USAN); Cilazapril hydrate (JP17) ... DG00341 ... Fosinopril ... D07992 ... Fosinopril (INN) ... D00622 ... Fosinopril sodium

Navy Ship Names: Background for Congress

Science.gov (United States)

2016-09-14

Secretary considers these nominations , along with others he receives as well as his own thoughts in this matter. At appropriate times, he selects names...Research Service 16 “ nomination ” process is often fiercely contested as differing groups make the case that “their” ship name is the most fitting...and practices of the Navy for naming vessels of the Navy, and an explanation for such variances;  Assesses the feasibility and advisability of

Phonaesthemes and sound symbolism in Swedish brand names

OpenAIRE

Abelin, Åsa

2015-01-01

This study examines the prevalence of sound symbolism in Swedish brand names. A general principle of brand name design is that effective names should be distinctive, recognizable, easy to pronounce and meaningful. Much money is invested in designing powerful brand names, where the emotional impact of the names on consumers is also relevant and it is important to avoid negative connotations. Customers prefer brand names, which say something about the product, as this reduces product uncertaint...

What's in a Name? For A Million Bucks or So, You can Name that School

Science.gov (United States)

Altbach, Philip G.

2006-01-01

Although "naming rights" have proliferated in American higher education for the past several decades, the phenomenon has recently expanded to extraordinary lengths. In this area, academe fits right in with the larger culture, which has named everything from AutoZone Park to Gillette Stadium to the children's wing of your local hospital. Anything…

Naming game with learning errors in communications

OpenAIRE

Lou, Yang; Chen, Guanrong

2014-01-01

Naming game simulates the process of naming an objective by a population of agents organized in a certain communication network topology. By pair-wise iterative interactions, the population reaches a consensus state asymptotically. In this paper, we study naming game with communication errors during pair-wise conversations, where errors are represented by error rates in a uniform probability distribution. First, a model of naming game with learning errors in communications (NGLE) is proposed....

27 CFR 40.93 - Change in corporate name.

Science.gov (United States)

2010-04-01

... 27 Alcohol, Tobacco Products and Firearms 2 2010-04-01 2010-04-01 false Change in corporate name... Changes in Name § 40.93 Change in corporate name. Where there is a change in the name of a corporate... to establish that the corporate name has been changed. (72 Stat. 1421; 26 U.S.C. 5712) Changes in...

27 CFR 44.103 - Change in corporate name.

Science.gov (United States)

2010-04-01

... 27 Alcohol, Tobacco Products and Firearms 2 2010-04-01 2010-04-01 false Change in corporate name... Warehouse Proprietors Changes in Name § 44.103 Change in corporate name. Where there is a change in the name... may be necessary to establish that the corporate name has been changed. (72 Stat. 1421; 26 U.S.C. 5712...

Standardizing Naming Conventions in Radiation Oncology

Energy Technology Data Exchange (ETDEWEB)

Santanam, Lakshmi [Department of Radiation Oncology, Washington University School of Medicine, St. Louis, MO (United States); Hurkmans, Coen [Department of Radiation Oncology, Catharina Hospital, Eindhoven (Netherlands); Mutic, Sasa [Department of Radiation Oncology, Washington University School of Medicine, St. Louis, MO (United States); Vliet-Vroegindeweij, Corine van [Department of Radiation Oncology, Thomas Jefferson University Hospital, Philadelphia, PA (United States); Brame, Scott; Straube, William [Department of Radiation Oncology, Washington University School of Medicine, St. Louis, MO (United States); Galvin, James [Department of Radiation Oncology, Thomas Jefferson University Hospital, Philadelphia, PA (United States); Tripuraneni, Prabhakar [Department of Radiation Oncology, Scripps Clinic, LaJolla, CA (United States); Michalski, Jeff [Department of Radiation Oncology, Washington University School of Medicine, St. Louis, MO (United States); Bosch, Walter, E-mail: wbosch@radonc.wustl.edu [Department of Radiation Oncology, Washington University School of Medicine, St. Louis, MO (United States); Advanced Technology Consortium, Image-guided Therapy QA Center, St. Louis, MO (United States)

2012-07-15

Purpose: The aim of this study was to report on the development of a standardized target and organ-at-risk naming convention for use in radiation therapy and to present the nomenclature for structure naming for interinstitutional data sharing, clinical trial repositories, integrated multi-institutional collaborative databases, and quality control centers. This taxonomy should also enable improved plan benchmarking between clinical institutions and vendors and facilitation of automated treatment plan quality control. Materials and Methods: The Advanced Technology Consortium, Washington University in St. Louis, Radiation Therapy Oncology Group, Dutch Radiation Oncology Society, and the Clinical Trials RT QA Harmonization Group collaborated in creating this new naming convention. The International Commission on Radiation Units and Measurements guidelines have been used to create standardized nomenclature for target volumes (clinical target volume, internal target volume, planning target volume, etc.), organs at risk, and planning organ-at-risk volumes in radiation therapy. The nomenclature also includes rules for specifying laterality and margins for various structures. The naming rules distinguish tumor and nodal planning target volumes, with correspondence to their respective tumor/nodal clinical target volumes. It also provides rules for basic structure naming, as well as an option for more detailed names. Names of nonstandard structures used mainly for plan optimization or evaluation (rings, islands of dose avoidance, islands where additional dose is needed [dose painting]) are identified separately. Results: In addition to its use in 16 ongoing Radiation Therapy Oncology Group advanced technology clinical trial protocols and several new European Organization for Research and Treatment of Cancer protocols, a pilot version of this naming convention has been evaluated using patient data sets with varying treatment sites. All structures in these data sets were

Standardizing naming conventions in radiation oncology.

Science.gov (United States)

Santanam, Lakshmi; Hurkmans, Coen; Mutic, Sasa; van Vliet-Vroegindeweij, Corine; Brame, Scott; Straube, William; Galvin, James; Tripuraneni, Prabhakar; Michalski, Jeff; Bosch, Walter

2012-07-15

The aim of this study was to report on the development of a standardized target and organ-at-risk naming convention for use in radiation therapy and to present the nomenclature for structure naming for interinstitutional data sharing, clinical trial repositories, integrated multi-institutional collaborative databases, and quality control centers. This taxonomy should also enable improved plan benchmarking between clinical institutions and vendors and facilitation of automated treatment plan quality control. The Advanced Technology Consortium, Washington University in St. Louis, Radiation Therapy Oncology Group, Dutch Radiation Oncology Society, and the Clinical Trials RT QA Harmonization Group collaborated in creating this new naming convention. The International Commission on Radiation Units and Measurements guidelines have been used to create standardized nomenclature for target volumes (clinical target volume, internal target volume, planning target volume, etc.), organs at risk, and planning organ-at-risk volumes in radiation therapy. The nomenclature also includes rules for specifying laterality and margins for various structures. The naming rules distinguish tumor and nodal planning target volumes, with correspondence to their respective tumor/nodal clinical target volumes. It also provides rules for basic structure naming, as well as an option for more detailed names. Names of nonstandard structures used mainly for plan optimization or evaluation (rings, islands of dose avoidance, islands where additional dose is needed [dose painting]) are identified separately. In addition to its use in 16 ongoing Radiation Therapy Oncology Group advanced technology clinical trial protocols and several new European Organization for Research and Treatment of Cancer protocols, a pilot version of this naming convention has been evaluated using patient data sets with varying treatment sites. All structures in these data sets were satisfactorily identified using this

Standardizing Naming Conventions in Radiation Oncology

International Nuclear Information System (INIS)

Santanam, Lakshmi; Hurkmans, Coen; Mutic, Sasa; Vliet-Vroegindeweij, Corine van; Brame, Scott; Straube, William; Galvin, James; Tripuraneni, Prabhakar; Michalski, Jeff; Bosch, Walter

2012-01-01

Purpose: The aim of this study was to report on the development of a standardized target and organ-at-risk naming convention for use in radiation therapy and to present the nomenclature for structure naming for interinstitutional data sharing, clinical trial repositories, integrated multi-institutional collaborative databases, and quality control centers. This taxonomy should also enable improved plan benchmarking between clinical institutions and vendors and facilitation of automated treatment plan quality control. Materials and Methods: The Advanced Technology Consortium, Washington University in St. Louis, Radiation Therapy Oncology Group, Dutch Radiation Oncology Society, and the Clinical Trials RT QA Harmonization Group collaborated in creating this new naming convention. The International Commission on Radiation Units and Measurements guidelines have been used to create standardized nomenclature for target volumes (clinical target volume, internal target volume, planning target volume, etc.), organs at risk, and planning organ-at-risk volumes in radiation therapy. The nomenclature also includes rules for specifying laterality and margins for various structures. The naming rules distinguish tumor and nodal planning target volumes, with correspondence to their respective tumor/nodal clinical target volumes. It also provides rules for basic structure naming, as well as an option for more detailed names. Names of nonstandard structures used mainly for plan optimization or evaluation (rings, islands of dose avoidance, islands where additional dose is needed [dose painting]) are identified separately. Results: In addition to its use in 16 ongoing Radiation Therapy Oncology Group advanced technology clinical trial protocols and several new European Organization for Research and Treatment of Cancer protocols, a pilot version of this naming convention has been evaluated using patient data sets with varying treatment sites. All structures in these data sets were

Humorous Names in the Light of Incongruity Theory

Directory of Open Access Journals (Sweden)

Mariusz Rutkowski

2016-07-01

Full Text Available The article addresses the humorous function of proper names in the light of incongruity theory. It aims at proving that, although names are often defined as pragmatically “transparent,” they may possess some humorous value due to semantic and pragmatic shifts resulting from the disturbance of ordinary patterns of proper names identification and interpretation. After a brief introduction, the author discusses different variants of incongruity theory as resented in the works by Victor Raskin and Thomas C. Veatch as well as their possible application to the study of humorous names. The second part of the paper provides an analysis of the humorous effects of proper names which includes anthroponyms, toponyms, trade names, football team names and names in literature. The first section of this part concentrates on names in which humour is unintentional and seems to be induced by the context, while the second section focuses on names which are intentionally humourous, i.e. supposed to amuse from the moment of their creation. The author argues that the incongruity theory can provide a useful framework for the study of the different mechanisms responsible of the semantic shifts which determine the variation of pragmatic values of proper names.

Dgroup: DG01718 [KEGG MEDICUS

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Gorlin-Goltz: what's in a name?

LENUS (Irish Health Repository)

McNamara, T

1998-03-01

This paper describes the clinical features of two very distinct syndromes with similar names: Gorlin-Goltz and Goltz-Gorlin Syndromes. A case report is presented that highlights the differences between these syndromes. To avoid errors in diagnosis because of the similarity in names, the authors caution that, based on additional information now available, the preferred names should be Focal Dermal Hypoplasia syndrome for Goltz-Gorlin syndrome and Nevoid Basal Cell Carcinoma syndrome for Gorlin-Goltz syndrome.

Semantic Web Compatible Names and Descriptions for Organisms

Science.gov (United States)

Wang, H.; Wilson, N.; McGuinness, D. L.

2012-12-01

Modern scientific names are critical for understanding the biological literature and provide a valuable way to understand evolutionary relationships. To validly publish a name, a description is required to separate the described group of organisms from those described by other names at the same level of the taxonomic hierarchy. The frequent revision of descriptions due to new evolutionary evidence has lead to situations where a single given scientific name may over time have multiple descriptions associated with it and a given published description may apply to multiple scientific names. Because of these many-to-many relationships between scientific names and descriptions, the usage of scientific names as a proxy for descriptions is inevitably ambiguous. Another issue lies in the fact that the precise application of scientific names often requires careful microscopic work, or increasingly, genetic sequencing, as scientific names are focused on the evolutionary relatedness between and within named groups such as species, genera, families, etc. This is problematic to many audiences, especially field biologists, who often do not have access to the instruments and tools required to make identifications on a microscopic or genetic basis. To better connect scientific names to descriptions and find a more convenient way to support computer assisted identification, we proposed the Semantic Vernacular System, a novel naming system that creates named, machine-interpretable descriptions for groups of organisms, and is compatible with the Semantic Web. Unlike the evolutionary relationship based scientific naming system, it emphasizes the observable features of organisms. By independently naming the descriptions composed of sets of observational features, as well as maintaining connections to scientific names, it preserves the observational data used to identify organisms. The system is designed to support a peer-review mechanism for creating new names, and uses a controlled

Plants and geographical names in Croatia.

Science.gov (United States)

Cargonja, Hrvoje; Daković, Branko; Alegro, Antun

2008-09-01

The main purpose of this paper is to present some general observations, regularities and insights into a complex relationship between plants and people through symbolic systems like geographical names on the territory of Croatia. The basic sources of data for this research were maps from atlas of Croatia of the scale 1:100000. Five groups of maps or areas were selected in order to represent main Croatian phytogeographic regions. A selection of toponyms from each of the map was made in which the name for a plant in Croatian language was recognized (phytotoponyms). Results showed that of all plant names recognized in geographical names the most represented are trees, and among them birch and oak the most. Furthermore, an attempt was made to explain the presence of the most represented plant species in the phytotoponyms in the light of general phytogeographical and sociocultural differences and similarities of comparing areas. The findings confirm an expectation that the genera of climazonal vegetation of particular area are the most represented among the phytotoponyms. Nevertheless, there are ample examples where representation of a plant name in the names of human environment can only be ascribed to ethno-linguistic and socio-cultural motives. Despite the reductionist character of applied methodology, this research also points out some advantages of this approach for ethnobotanic and ethnolinguistic studies of greater areas of human environment.

"Name" that Animal

Science.gov (United States)

Laird, Shirley

2010-01-01

In this article, the author describes a texture and pattern project. Students started by doing an outline contour drawing of an animal. With the outline drawn, the students then write one of their names to fit "inside" the animal.

Pen- Name in Persian and Arabic Poetry

Directory of Open Access Journals (Sweden)

Ebrahim Khodayar

2012-03-01

Full Text Available  Abstract Pen-name (Takhalloss is one of the main features of Persian poetry. It has been a matter of concern among many of Persian language geography poets in the orient at least up to the Mashrouteh era. Pen-name has been promoted among the other Muslim nations throuph Persian poetry. Although it is not as famous in the Arab nations as in the Persian speaking nations, it is known as “Alqab-o-shoara” among the Arab nations and, through this way, it has affected the poetrical wealth of the Arabic poets.   The Present paper, using description-analystic approach, compares the pen-names of Persian and Arabic poets under the title of “pen-names” and investigates their features in both cultures. The main research question is: What are the similarities and differences of poetic-names, in Persian and Arabic poets in terms of the type of name, position and importance? The results showed that Pseudonym by its amazing expansion in Persian poetry has also influenced Arabic poetry. In addition to the factors affecting in the choice of pen-names (like pseudonym, pen-name, nickname..., sometimes such external factors as events, commends, community benefactors and climate, as well as internal factors including the poets’ inner beliefs are associated too. .

High Temperature Materials Laboratory sixth annual report, October 1992--September 1993

Energy Technology Data Exchange (ETDEWEB)

Tennery, V.J.; Foust, F.M.

1993-12-01

The High Temperature Materials Laboratory has completed its sixth year of operation as a designated Department of Energy User Facility at the Oak Ridge National Laboratory. Growth of the User Program is evidenced by the number of outside institutions executing user agreements since the facility began operation in 1987. A total of 172 nonproprietary agreements (88 university and 84 industry) and 35 proprietary agreements, (2 university, 33 industry) are now in effect. Six other government facilities have also participated in the User Program. Thirty-eight states are represented by these interactions. Ninety-four nonproprietary research proposals (44 from universities, 47 from industry, and 3 from other government facilities) and three proprietary proposals were considered during this reporting period. Nonproprietary research projects active in FY 1993 are summarized.

Dgroup: DG01457 [KEGG MEDICUS

Lifescience Database Archive (English)

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Dgroup: DG01635 [KEGG MEDICUS

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Dgroup: DG01554 [KEGG MEDICUS

Lifescience Database Archive (English)

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Dgroup: DG02018 [KEGG MEDICUS

Lifescience Database Archive (English)

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Dgroup: DG01958 [KEGG MEDICUS

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SOCIOLINGUISTIC IMPORT OF NAME-CLIPPING AMONG ...

African Journals Online (AJOL)

NGOZI

2013-02-27

Feb 27, 2013 ... experiences which, most of the times, encompass cultural and philosophical ... The art of name clipping goes way back in language history ... describes Akan names as “iconic representation of complete social variables that ...

Towards proper name generation : A corpus analysis

NARCIS (Netherlands)

Castro Ferreira, Thiago; Wubben, Sander; Krahmer, Emiel

We introduce a corpus for the study of proper name generation. The corpus consists of proper name references to people in webpages, extracted from the Wikilinks corpus. In our analyses, we aim to identify the different ways, in terms of length and form, in which a proper names are produced

The Private Legal Governance of Domain Names

DEFF Research Database (Denmark)

Schovsbo, Jens Hemmingsen

2015-01-01

. the UDRP (WIPO) and the Danish Complaints Board for Internet Domain Names (the Board) to discuss how and to what extent the domain name system balances interests between trademark owners and other users of domain names and secures the rule of law (legal certainty and predictability) with a special focus...

Low Temperature Growth of In2O3and InN Nanocrystals on Si(111 via Chemical Vapour Deposition Based on the Sublimation of NH4Cl in In

Directory of Open Access Journals (Sweden)

Tsokkou Demetra

2009-01-01

Full Text Available Abstract Indium oxide (In2O3 nanocrystals (NCs have been obtained via atmospheric pressure, chemical vapour deposition (APCVD on Si(111 via the direct oxidation of In with Ar:10% O2at 1000 °C but also at temperatures as low as 500 °C by the sublimation of ammonium chloride (NH4Cl which is incorporated into the In under a gas flow of nitrogen (N2. Similarly InN NCs have also been obtained using sublimation of NH4Cl in a gas flow of NH3. During oxidation of In under a flow of O2the transfer of In into the gas stream is inhibited by the formation of In2O3around the In powder which breaks up only at high temperatures, i.e.T > 900 °C, thereby releasing In into the gas stream which can then react with O2leading to a high yield formation of isolated 500 nm In2O3octahedrons but also chains of these nanostructures. No such NCs were obtained by direct oxidation forT G < 900 °C. The incorporation of NH4Cl in the In leads to the sublimation of NH4Cl into NH3and HCl at around 338 °C which in turn produces an efficient dispersion and transfer of the whole In into the gas stream of N2where it reacts with HCl forming primarily InCl. The latter adsorbs onto the Si(111 where it reacts with H2O and O2leading to the formation of In2O3nanopyramids on Si(111. The rest of the InCl is carried downstream, where it solidifies at lower temperatures, and rapidly breaks down into metallic In upon exposure to H2O in the air. Upon carrying out the reaction of In with NH4Cl at 600 °C under NH3as opposed to N2, we obtain InN nanoparticles on Si(111 with an average diameter of 300 nm.

Robust hybrid name disambiguation framework for large databases

KAUST Repository

Zhu, Jia

2013-10-26

In many databases, science bibliography database for example, name attribute is the most commonly chosen identifier to identify entities. However, names are often ambiguous and not always unique which cause problems in many fields. Name disambiguation is a non-trivial task in data management that aims to properly distinguish different entities which share the same name, particularly for large databases like digital libraries, as only limited information can be used to identify authors\\' name. In digital libraries, ambiguous author names occur due to the existence of multiple authors with the same name or different name variations for the same person. Also known as name disambiguation, most of the previous works to solve this issue often employ hierarchical clustering approaches based on information inside the citation records, e.g. co-authors and publication titles. In this paper, we focus on proposing a robust hybrid name disambiguation framework that is not only applicable for digital libraries but also can be easily extended to other application based on different data sources. We propose a web pages genre identification component to identify the genre of a web page, e.g. whether the page is a personal homepage. In addition, we propose a re-clustering model based on multidimensional scaling that can further improve the performance of name disambiguation. We evaluated our approach on known corpora, and the favorable experiment results indicated that our proposed framework is feasible. © 2013 Akadémiai Kiadó, Budapest, Hungary.

Robust hybrid name disambiguation framework for large databases

KAUST Repository

Zhu, Jia; Yang, Yi; Xie, Qing; Wang, Liwei; Hassan, Saeed-Ul

2013-01-01

In many databases, science bibliography database for example, name attribute is the most commonly chosen identifier to identify entities. However, names are often ambiguous and not always unique which cause problems in many fields. Name disambiguation is a non-trivial task in data management that aims to properly distinguish different entities which share the same name, particularly for large databases like digital libraries, as only limited information can be used to identify authors' name. In digital libraries, ambiguous author names occur due to the existence of multiple authors with the same name or different name variations for the same person. Also known as name disambiguation, most of the previous works to solve this issue often employ hierarchical clustering approaches based on information inside the citation records, e.g. co-authors and publication titles. In this paper, we focus on proposing a robust hybrid name disambiguation framework that is not only applicable for digital libraries but also can be easily extended to other application based on different data sources. We propose a web pages genre identification component to identify the genre of a web page, e.g. whether the page is a personal homepage. In addition, we propose a re-clustering model based on multidimensional scaling that can further improve the performance of name disambiguation. We evaluated our approach on known corpora, and the favorable experiment results indicated that our proposed framework is feasible. © 2013 Akadémiai Kiadó, Budapest, Hungary.

SNAD: sequence name annotation-based designer

Directory of Open Access Journals (Sweden)

Gorbalenya Alexander E

2009-08-01

Full Text Available Abstract Background A growing diversity of biological data is tagged with unique identifiers (UIDs associated with polynucleotides and proteins to ensure efficient computer-mediated data storage, maintenance, and processing. These identifiers, which are not informative for most people, are often substituted by biologically meaningful names in various presentations to facilitate utilization and dissemination of sequence-based knowledge. This substitution is commonly done manually that may be a tedious exercise prone to mistakes and omissions. Results Here we introduce SNAD (Sequence Name Annotation-based Designer that mediates automatic conversion of sequence UIDs (associated with multiple alignment or phylogenetic tree, or supplied as plain text list into biologically meaningful names and acronyms. This conversion is directed by precompiled or user-defined templates that exploit wealth of annotation available in cognate entries of external databases. Using examples, we demonstrate how this tool can be used to generate names for practical purposes, particularly in virology. Conclusion A tool for controllable annotation-based conversion of sequence UIDs into biologically meaningful names and acronyms has been developed and placed into service, fostering links between quality of sequence annotation, and efficiency of communication and knowledge dissemination among researchers.

Dgroup: DG01439 [KEGG MEDICUS

Lifescience Database Archive (English)

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Dgroup: DG01458 [KEGG MEDICUS

Lifescience Database Archive (English)

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Anthroponyms in Finno-Permic Compound Plant Names

Directory of Open Access Journals (Sweden)

Igor V. Brodsky

2017-07-01

Full Text Available With reference to Finno-Permic languages (a branch of Finno-Ugric languages excluding Ugric languages, the article analyses compound names of plants (phytonyms containing Permic languages, which, inter alia, can be explained by the incompleteness of collected data. Most of phytonyms with anthroponymic elements are attested in the Finnish and Estonian languages, while in the other Finno-Permic languages such attestations are rare. The anthroponyms appearing in names of plants are divided into two groups: a personal names of Biblical origin (e.g. Finnish Aapraham, Aatam, Jeesus, Maaria, b other anthroponyms. In the first group, the most numerous are Balto-Fennic phytonyms with the names Johannes and Maria and their national variants. The name Johannes (Finnish Juhannus, Estonian Jaan is most often present in the names of herbaceous plants flourishing in the period of celebration of Saint John’s Eve. Traditionally, this feast is associated with numerous rites and customs in which some plants play a significant role. An interesting formal feature of Balto-Fennic deanthroponymic compound names of plants is alliteration, i.e. repetition of identical or similar sound clusters in the beginning of each part of the word, as in Finnish liisanlilukka ‘stone bramble,’ simonsien’ ‘chanterelle, girolle’.

Resolving person names in web people search

NARCIS (Netherlands)

Balog, K.; Azzopardi, L.; de Rijke, M.; King, I.; Baeza-Yates, R.

2009-01-01

Disambiguating person names in a set of documents (such as a set of web pages returned in response to a person name) is a key task for the presentation of results and the automatic profiling of experts. With largely unstructured documents and an unknown number of people with the same name the

27 CFR 18.32 - Change in name.

Science.gov (United States)

2010-04-01

... Original Establishment § 18.32 Change in name. The proprietor shall submit an amended application to cover any change in the individual, firm, or corporate name. (Approved by the Office of Management and... 27 Alcohol, Tobacco Products and Firearms 1 2010-04-01 2010-04-01 false Change in name. 18.32...

High Temperature Materials Laboratory seventh annual report, October 1993--September 1994

Energy Technology Data Exchange (ETDEWEB)

Tennery, V.J.; Teague, P.A.

1994-12-01

The High Temperature Materials Laboratory (HTML) has completed its seventh year of operation as a designated Department of Energy User Facility at the Oak Ridge National Laboratory. Growth of the User Program has been demonstrated by the number of institutions executing user agreements since the HTML began operation in 1987. A total of 193 nonproprietary agreements (91 industry and 102 university) and 41 proprietary agreements (39 industry and two university) are now in effect. This represents an increase of 21 nonproprietary user agreements during FY 1994. Forty-one states are represented by these users. During FY 1994, the HTML User Program evaluated 106 nonproprietary proposals (46 from industry, 52 from universities, and 8 from other government facilities) and 8 proprietary proposals. The HTML User Advisory Committee approved about ninety-five percent of those evaluated proposals, sometimes after the prospective user revised the proposal based on comments from the Committee. This annual report discusses FY 1994 activities in the individual user centers, as well as plans for the future. It also gives statistics about users and their proposals and FY 1994 publications, and summarizes nonproprietary research projects active in FY 1994.

Validity and reliability of the NAB Naming Test.

Science.gov (United States)

Sachs, Bonnie C; Rush, Beth K; Pedraza, Otto

2016-05-01

Confrontation naming is commonly assessed in neuropsychological practice, but few standardized measures of naming exist and those that do are susceptible to the effects of education and culture. The Neuropsychological Assessment Battery (NAB) Naming Test is a 31-item measure used to assess confrontation naming. Despite adequate psychometric information provided by the test publisher, there has been limited independent validation of the test. In this study, we investigated the convergent and discriminant validity, internal consistency, and alternate forms reliability of the NAB Naming Test in a sample of adults (Form 1: n = 247, Form 2: n = 151) clinically referred for neuropsychological evaluation. Results indicate adequate-to-good internal consistency and alternate forms reliability. We also found strong convergent validity as demonstrated by relationships with other neurocognitive measures. We found preliminary evidence that the NAB Naming Test demonstrates a more pronounced ceiling effect than other commonly used measures of naming. To our knowledge, this represents the largest published independent validation study of the NAB Naming Test in a clinical sample. Our findings suggest that the NAB Naming Test demonstrates adequate validity and reliability and merits consideration in the test arsenal of clinical neuropsychologists.

37 CFR 10.35 - Firm names and letterheads.

Science.gov (United States)

2010-07-01

... 37 Patents, Trademarks, and Copyrights 1 2010-07-01 2010-07-01 false Firm names and letterheads... Office Code of Professional Responsibility § 10.35 Firm names and letterheads. (a) A practitioner shall not use a firm name, letterhead, or other professional designation that violates § 10.31. A trade name...

Influence of defects on the absorption edge of InN thin films: The band gap value

Science.gov (United States)

Thakur, J. S.; Danylyuk, Y. V.; Haddad, D.; Naik, V. M.; Naik, R.; Auner, G. W.

2007-07-01

We investigate the optical-absorption spectra of InN thin films whose electron density varies from ˜1017tõ1021cm-3 . The low-density films are grown by molecular-beam-epitaxy deposition while highly degenerate films are grown by plasma-source molecular-beam epitaxy. The optical-absorption edge is found to increase from 0.61to1.90eV as the carrier density of the films is increased from low to high density. Since films are polycrystalline and contain various types of defects, we discuss the band gap values by studying the influence of electron degeneracy, electron-electron, electron-ionized impurities, and electron-LO-phonon interaction self-energies on the spectral absorption coefficients of these films. The quasiparticle self-energies of the valence and conduction bands are calculated using dielectric screening within the random-phase approximation. Using one-particle Green’s function analysis, we self-consistently determine the chemical potential for films by coupling equations for the chemical potential and the single-particle scattering rate calculated within the effective-mass approximation for the electron scatterings from ionized impurities and LO phonons. By subtracting the influence of self-energies and chemical potential from the optical-absorption edge energy, we estimate the intrinsic band gap values for the films. We also determine the variations in the calculated band gap values due to the variations in the electron effective mass and static dielectric constant. For the lowest-density film, the estimated band gap energy is ˜0.59eV , while for the highest-density film, it varies from ˜0.60tõ0.68eV depending on the values of electron effective mass and dielectric constant.

27 CFR 4.35 - Name and address.

Science.gov (United States)

2010-04-01

... named winery: (A) Fermented not less than 75% of such wine at the stated address, or (B) Changed the.... (iv) Blended means that the named winery mixed the wine with other wines of the same class and type at the stated address. (v) Cellared, Vinted or Prepared means that the named winery, at the stated...

Parents' Perspectives on Adopting English Names in Taiwan

Science.gov (United States)

Huang, Chiu-Yen; Ke, I-Chung

2016-01-01

This study investigated the adoption of English names in Taiwan through questionnaires and interviews with parents of junior high school students. In total, 564 parents filled out a questionnaire regarding their adoption of an English name, reasons for needing an English name, and their perspectives about their child's English name. We interviewed…

Brand Suicide? Memory and Liking of Negative Brand Names.

Science.gov (United States)

Guest, Duncan; Estes, Zachary; Gibbert, Michael; Mazursky, David

2016-01-01

Negative brand names are surprisingly common in the marketplace (e.g., Poison perfume; Hell pizza, and Monster energy drink), yet their effects on consumer behavior are currently unknown. Three studies investigated the effects of negative brand name valence on brand name memory and liking of a branded product. Study 1 demonstrates that relative to non-negative brand names, negative brand names and their associated logos are better recognised. Studies 2 and 3 demonstrate that negative valence of a brand name tends to have a detrimental influence on product evaluation with evaluations worsening as negative valence increases. However, evaluation is also dependent on brand name arousal, with high arousal brand names resulting in more positive evaluations, such that moderately negative brand names are equally as attractive as some non-negative brand names. Study 3 shows evidence for affective habituation, whereby the effects of negative valence reduce with repeated exposures to some classes of negative brand name.

Brand Suicide? Memory and Liking of Negative Brand Names

Science.gov (United States)

Guest, Duncan; Estes, Zachary; Gibbert, Michael; Mazursky, David

2016-01-01

Negative brand names are surprisingly common in the marketplace (e.g., Poison perfume; Hell pizza, and Monster energy drink), yet their effects on consumer behavior are currently unknown. Three studies investigated the effects of negative brand name valence on brand name memory and liking of a branded product. Study 1 demonstrates that relative to non-negative brand names, negative brand names and their associated logos are better recognised. Studies 2 and 3 demonstrate that negative valence of a brand name tends to have a detrimental influence on product evaluation with evaluations worsening as negative valence increases. However, evaluation is also dependent on brand name arousal, with high arousal brand names resulting in more positive evaluations, such that moderately negative brand names are equally as attractive as some non-negative brand names. Study 3 shows evidence for affective habituation, whereby the effects of negative valence reduce with repeated exposures to some classes of negative brand name. PMID:27023872

Gene name ambiguity of eukaryotic nomenclatures.

Science.gov (United States)

Chen, Lifeng; Liu, Hongfang; Friedman, Carol

2005-01-15

With more and more scientific literature published online, the effective management and reuse of this knowledge has become problematic. Natural language processing (NLP) may be a potential solution by extracting, structuring and organizing biomedical information in online literature in a timely manner. One essential task is to recognize and identify genomic entities in text. 'Recognition' can be accomplished using pattern matching and machine learning. But for 'identification' these techniques are not adequate. In order to identify genomic entities, NLP needs a comprehensive resource that specifies and classifies genomic entities as they occur in text and that associates them with normalized terms and also unique identifiers so that the extracted entities are well defined. Online organism databases are an excellent resource to create such a lexical resource. However, gene name ambiguity is a serious problem because it affects the appropriate identification of gene entities. In this paper, we explore the extent of the problem and suggest ways to address it. We obtained gene information from 21 organisms and quantified naming ambiguities within species, across species, with English words and with medical terms. When the case (of letters) was retained, official symbols displayed negligible intra-species ambiguity (0.02%) and modest ambiguities with general English words (0.57%) and medical terms (1.01%). In contrast, the across-species ambiguity was high (14.20%). The inclusion of gene synonyms increased intra-species ambiguity substantially and full names contributed greatly to gene-medical-term ambiguity. A comprehensive lexical resource that covers gene information for the 21 organisms was then created and used to identify gene names by using a straightforward string matching program to process 45,000 abstracts associated with the mouse model organism while ignoring case and gene names that were also English words. We found that 85.1% of correctly retrieved mouse

27 CFR 40.395 - Change in name.

Science.gov (United States)

2010-04-01

... § 40.395 Change in name. Where there is a change in the individual, trade, or corporate name of a manufacturer of cigarette papers and tubes, the manufacturer shall, within 30 days of the change, furnish the... 27 Alcohol, Tobacco Products and Firearms 2 2010-04-01 2010-04-01 false Change in name. 40.395...

Once more the generic name Passerina Vieillot

NARCIS (Netherlands)

Oort, van E.D.

1910-01-01

The note on the generic name of the Snow-bunting by Dr. E. Hartert in this part of our periodical gives me cause to revert to the subject of my note on the generic name Passerina Vieillot and to state here, that I stand to what I have said about the rejection of this name in Zoology (Notes Leyden

Family-group names in Coleoptera (Insecta)

Science.gov (United States)

Bouchard, Patrice; Bousquet, Yves; Davies, Anthony E.; Alonso-Zarazaga, Miguel A.; Lawrence, John F.; Lyal, Chris H. C.; Newton, Alfred F.; Reid, Chris A. M.; Schmitt, Michael; Ślipiński, S. Adam; Smith, Andrew B. T.

2011-01-01

Abstract We synthesize data on all known extant and fossil Coleoptera family-group names for the first time. A catalogue of 4887 family-group names (124 fossil, 4763 extant) based on 4707 distinct genera in Coleoptera is given. A total of 4492 names are available, 183 of which are permanently invalid because they are based on a preoccupied or a suppressed type genus. Names are listed in a classification framework. We recognize as valid 24 superfamilies, 211 families, 541 subfamilies, 1663 tribes and 740 subtribes. For each name, the original spelling, author, year of publication, page number, correct stem and type genus are included. The original spelling and availability of each name were checked from primary literature. A list of necessary changes due to Priority and Homonymy problems, and actions taken, is given. Current usage of names was conserved, whenever possible, to promote stability of the classification. New synonymies (family-group names followed by genus-group names): Agronomina Gistel, 1848 syn. nov. of Amarina Zimmermann, 1832 (Carabidae), Hylepnigalioini Gistel, 1856 syn. nov. of Melandryini Leach, 1815 (Melandryidae), Polycystophoridae Gistel, 1856 syn. nov. of Malachiinae Fleming, 1821 (Melyridae), Sclerasteinae Gistel, 1856 syn. nov. of Ptilininae Shuckard, 1839 (Ptinidae), Phloeonomini Ádám, 2001 syn. nov. of Omaliini MacLeay, 1825 (Staphylinidae), Sepedophilini Ádám, 2001 syn. nov. of Tachyporini MacLeay, 1825 (Staphylinidae), Phibalini Gistel, 1856 syn. nov. of Cteniopodini Solier, 1835 (Tenebrionidae); Agronoma Gistel 1848 (type species Carabus familiaris Duftschmid, 1812, designated herein) syn. nov. of Amara Bonelli, 1810 (Carabidae), Hylepnigalio Gistel, 1856 (type species Chrysomela caraboides Linnaeus, 1760, by monotypy) syn. nov. of Melandrya Fabricius, 1801 (Melandryidae), Polycystophorus Gistel, 1856 (type species Cantharis aeneus Linnaeus, 1758, designated herein) syn. nov. of Malachius Fabricius, 1775 (Melyridae), Sclerastes

Family-Group Names In Coleoptera (Insecta

Directory of Open Access Journals (Sweden)

Patrice Bouchard

2011-04-01

Full Text Available We synthesize data on all known extant and fossil Coleoptera family-group names for the first time. A catalogue of 4887 family-group names (124 fossil, 4763 extant based on 4707 distinct genera in Coleoptera is given. A total of 4492 names are available, 183 of which are permanently invalid because they are based on a preoccupied or a suppressed type genus. Names are listed in a classification framework. We recognize as valid 24 superfamilies, 211 families, 541 subfamilies, 1663 tribes and 740 subtribes. For each name, the original spelling, author, year of publication, page number, correct stem and type genus are included. The original spelling and availability of each name were checked from primary literature. A list of necessary changes due to Priority and Homonymy problems, and actions taken, is given. Current usage of names was conserved, whenever possible, to promote stability of the classification. New synonymies (family-group names followed by genus-group names: Agronomina Gistel, 1848 syn. n. of Amarina Zimmermann, 1832 (Carabidae, Hylepnigalioini Gistel, 1856 syn. n. of Melandryini Leach, 1815 (Melandryidae, Polycystophoridae Gistel, 1856 syn. n. of Malachiinae Fleming, 1821 (Melyridae, Sclerasteinae Gistel, 1856 syn. n. of Ptilininae Shuckard, 1839 (Ptinidae, Phloeonomini Ádám, 2001 syn. n. of Omaliini MacLeay, 1825 (Staphylinidae, Sepedophilini Ádám, 2001 syn. n. of Tachyporini MacLeay, 1825 (Staphylinidae, Phibalini Gistel, 1856 syn. n. of Cteniopodini Solier, 1835 (Tenebrionidae; Agronoma Gistel 1848 (type species Carabus familiaris Duftschmid, 1812, designated herein syn. n. of Amara Bonelli, 1810 (Carabidae, Hylepnigalio Gistel, 1856 (type species Chrysomela caraboides Linnaeus, 1760, by monotypy syn. n. of Melandrya Fabricius, 1801 (Melandryidae, Polycystophorus Gistel, 1856 (type species Cantharis aeneus Linnaeus, 1758, designated herein syn. n. of Malachius Fabricius, 1775 (Melyridae, Sclerastes Gistel, 1856 (type species

The National Geographic Names Data Base: Phase II instructions

Science.gov (United States)

Orth, Donald J.; Payne, Roger L.

1987-01-01

The Geographic Names Information System is a computer-based information system developed to meet major national needs by providing information for named entities in the United States, its territories, and outlying areas. The National Geographic Names Data Base, a component of the Geographic Names Information System, currently contains most names and associated information recorded on the 1:24,000-scale (or largest scale available) topographic maps of the U.S. Geological Survey. The work involved in this initial compilation of names shown on the topographic-map series, and the development and editing of the National Geographic Names Data Base, is referred to as Phase I. Optimal use and effectiveness of an automated names system require that the names of features

BioNames: linking taxonomy, texts, and trees

Directory of Open Access Journals (Sweden)

Roderic D.M. Page

2013-10-01

Full Text Available BioNames is a web database of taxonomic names for animals, linked to the primary literature and, wherever possible, to phylogenetic trees. It aims to provide a taxonomic “dashboard” where at a glance we can see a summary of the taxonomic and phylogenetic information we have for a given taxon and hence provide a quick answer to the basic question “what is this taxon?” BioNames combines classifications from the Global Biodiversity Information Facility (GBIF and GenBank, images from the Encyclopedia of Life (EOL, animal names from the Index of Organism Names (ION, and bibliographic data from multiple sources including the Biodiversity Heritage Library (BHL and CrossRef. The user interface includes display of full text articles, interactive timelines of taxonomic publications, and zoomable phylogenies. It is available at http://bionames.org.

27 CFR 41.222 - Change in corporate name.

Science.gov (United States)

2010-04-01

... 27 Alcohol, Tobacco Products and Firearms 2 2010-04-01 2010-04-01 false Change in corporate name... Change in corporate name. Where there is a change in the corporate name of an importer of tobacco... corporate name has been changed. [T.D. ATF-422, 64 FR 71953, Dec. 22, 1999. Redesignated and amended by T.D...

Urbanonymic Design: On the Naming of City Facilities

Directory of Open Access Journals (Sweden)

Marina V. Golomidova

2015-06-01

Full Text Available The paper focuses on the problems of naming and renaming of municipal facilities: streets, squares, parks, public gardens, etc. The author’s reflections rest upon her personal experience as a member of the Facilities Naming Committee of the city of Ekaterinburg. The article seeks to suggest a new approach to the solution of controversial issues of naming city facilities based on territory branding and city image design and promotion concepts. Place names are thus considered as an important informational and communicational resource of creation of a city’s image which means that the naming of concrete city facilities should rely on a holistic urbanonymic conception defining basic features of the city’s identity and ordering themes to be reflected in names. The author argues that the rational long-term urbanonymic policy implies the existence of a consistent image-making strategy. In this case the process of naming and its results could be characterized in terms of ‘urbanonymic design’ considering the naming of city facilities as a part of the construction of the city’s identity. The policy of official naming of city-owned assets must then meet the following requirements: proportionality, functionality, orientation capacity, semantic transparency, harmonicity, which constitute the most significant principles of construction of an urbanonymic system.

Border collie comprehends object names as verbal referents.

Science.gov (United States)

Pilley, John W; Reid, Alliston K

2011-02-01

Four experiments investigated the ability of a border collie (Chaser) to acquire receptive language skills. Experiment 1 demonstrated that Chaser learned and retained, over a 3-year period of intensive training, the proper-noun names of 1022 objects. Experiment 2 presented random pair-wise combinations of three commands and three names, and demonstrated that she understood the separate meanings of proper-noun names and commands. Chaser understood that names refer to objects, independent of the behavior directed toward those objects. Experiment 3 demonstrated Chaser's ability to learn three common nouns--words that represent categories. Chaser demonstrated one-to-many (common noun) and many-to-one (multiple-name) name-object mappings. Experiment 4 demonstrated Chaser's ability to learn words by inferential reasoning by exclusion--inferring the name of an object based on its novelty among familiar objects that already had names. Together, these studies indicate that Chaser acquired referential understanding of nouns, an ability normally attributed to children, which included: (a) awareness that words may refer to objects, (b) awareness of verbal cues that map words upon the object referent, and (c) awareness that names may refer to unique objects or categories of objects, independent of the behaviors directed toward those objects. Copyright © 2010 Elsevier B.V. All rights reserved.

Domain learning naming game for color categorization.

Science.gov (United States)

Li, Doujie; Fan, Zhongyan; Tang, Wallace K S

2017-01-01

Naming game simulates the evolution of vocabulary in a population of agents. Through pairwise interactions in the games, agents acquire a set of vocabulary in their memory for object naming. The existing model confines to a one-to-one mapping between a name and an object. Focus is usually put onto name consensus in the population rather than knowledge learning in agents, and hence simple learning model is usually adopted. However, the cognition system of human being is much more complex and knowledge is usually presented in a complicated form. Therefore, in this work, we extend the agent learning model and design a new game to incorporate domain learning, which is essential for more complicated form of knowledge. In particular, we demonstrate the evolution of color categorization and naming in a population of agents. We incorporate the human perceptive model into the agents and introduce two new concepts, namely subjective perception and subliminal stimulation, in domain learning. Simulation results show that, even without any supervision or pre-requisition, a consensus of a color naming system can be reached in a population solely via the interactions. Our work confirms the importance of society interactions in color categorization, which is a long debate topic in human cognition. Moreover, our work also demonstrates the possibility of cognitive system development in autonomous intelligent agents.

Context-Dependent Semantic Priming in Number Naming

Science.gov (United States)

Campbell, Jamie I. D.; Reynvoet, Bert

2009-01-01

Previous research has shown that time to name single-digit Arabic numbers is about 15 ms slower when naming trials are interleaved with simple multiplication (e.g., state product of 2 x 3) than when naming digits is interleaved with magnitude comparison (e.g., state larger; 2 [arrow up] 3). To explain this phenomenon, J. I. D. Campbell and A. W.…

Referential processing: reciprocity and correlates of naming and imaging.

Science.gov (United States)

Paivio, A; Clark, J M; Digdon, N; Bons, T

1989-03-01

To shed light on the referential processes that underlie mental translation between representations of objects and words, we studied the reciprocity and determinants of naming and imaging reaction times (RT). Ninety-six subjects pressed a key when they had covertly named 248 pictures or imaged to their names. Mean naming and imagery RTs for each item were correlated with one another, and with properties of names, images, and their interconnections suggested by prior research and dual coding theory. Imagery RTs correlated .56 (df = 246) with manual naming RTs and .58 with voicekey naming RTs from prior studies. A factor analysis of the RTs and of 31 item characteristics revealed 7 dimensions. Imagery and naming RTs loaded on a common referential factor that included variables related to both directions of processing (e.g., missing names and missing images). Naming RTs also loaded on a nonverbal-to-verbal factor that included such variables as number of different names, whereas imagery RTs loaded on a verbal-to-nonverbal factor that included such variables as rated consistency of imagery. The other factors were verbal familiarity, verbal complexity, nonverbal familiarity, and nonverbal complexity. The findings confirm the reciprocity of imaging and naming, and their relation to constructs associated with distinct phases of referential processing.

Design of Brand Names of Medicines Considering Subjects' Preferences.

Science.gov (United States)

Pires, Carla Maria Batista Ferreira; Cavaco, Afonso

2018-03-01

Only recently, regulations on the names of medicines were developed. Regulations are mainly focused on avoiding the approval of medicine names that may be confusing to others. Furthermore, legal requirements do not include testing for human factors, such as potential users' preferences. To develop a set of new brand names of medicines, to determine subjects' preferred names, and to evaluate if the linguistic features of these names were related to subjects' preferences. Forty-six new names linguistically equivalent to the Portuguese brand names of medicines were developed. A panel of 13 postgraduates on linguistic studies were purposively enrolled. Participants were required to select and categorize the 6 most preferred names. From the 29 selected names: 62.1% ended in consonants, 65.5% contained at least one syllable of the CVC type, and 62.1% presented final stress. Considering these 3 linguistic features, there were statistically significant differences between the preferred and underpreferred names: χ 2 = 4.572, P = .032; χ 2 = 5.599, P = .018; and χ 2 = 4.572; P = .032, respectively. Some linguistic features of the evaluated names were related to subjects' preferences. Tests on subjects' preferences about the names of medicines may provide additional safety features addressed by the present regulations.

Phonaesthemes and sound symbolism in Swedish brand names

Directory of Open Access Journals (Sweden)

Åsa Abelin

2015-01-01

Full Text Available This study examines the prevalence of sound symbolism in Swedish brand names. A general principle of brand name design is that effective names should be distinctive, recognizable, easy to pronounce and meaningful. Much money is invested in designing powerful brand names, where the emotional impact of the names on consumers is also relevant and it is important to avoid negative connotations. Customers prefer brand names, which say something about the product, as this reduces product uncertainty (Klink, 2001. Therefore, consumers might prefer sound symbolic names. It has been shown that people associate the sounds of the nonsense words maluma and takete with round and angular shapes, respectively. By extension, more complex shapes and textures might activate words containing certain sounds. This study focuses on semantic dimensions expected to be relevant to product names, such as mobility, consistency, texture and shape. These dimensions are related to the senses of sight, hearing and touch and are also interesting from a cognitive linguistic perspective. Cross-modal assessment and priming experiments with pictures and written words were performed and the results analysed in relation to brand name databases and to sound symbolic sound combinations in Swedish (Abelin, 1999. The results show that brand names virtually never contain pejorative, i.e. depreciatory, consonant clusters, and that certain sounds and sound combinations are overrepresented in certain content categories. Assessment tests show correlations between pictured objects and phoneme combinations in newly created words (non-words. The priming experiment shows that object images prime newly created words as expected, based on the presence of compatible consonant clusters.

Undersea Feature Place Names as of June 2014

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — There are approximately 5100 undersea features with names approved by the United States Board on Geographic Names (BGN) currently in the Geographic Names Data Base...

Dgroup: DG01716 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG01716 DGroup Drugs for alcohol dependence ... DG00996 ... Acamprosate ... D07058 ... Acamprosate (INN) ... D02780 ... Acamprosate calcium (JAN/USAN) ... DG00997 ... Naltrexone ... D05113 ... Naltrexone (USAN/INN) ... D02095 ... Naltrexone hydrochloride (USP) ... DG00998 ... Nalmefene ... D05111 ... Nalmefene (USAN/INN) ... D02104 ... Nalmefene hydrochloride ... D10812 ... Nalmefene hydrochloride hydrate (JAN) DG01756 ... Ondelopran ... D10143 ... Ondelopran (USAN/INN) ... D10144 ... Ondelopran hydrochloride (USAN) D00123 ... Cyanamide (JP17) ... D00131 ... Disulfiram (JP17/USP/INN) ... D03288 ... Calcium carbimide (INN) Other ... DG01718 ... Drugs for addictive disorder ATC code: N07BB Drugs of addictive disorder ...

Name Authority Challenges for Indexing and Abstracting Databases

OpenAIRE

Denise Beaubien Bennett; Priscilla Williams

2006-01-01

Objective - This analysis explores alternative methods for managing author name changes in Indexing and Abstarcting (I&A) databases. A searcher may retrieve incomplete or inaccurate results when the database provides no or faulty assistance in linking author name variations. Methods - The article includes an analysis of current name authority practices in I&A databases and of selected research into name disambiguation models applied to authorship of articles. Results - Several potential...

Task choice and semantic interference in picture naming

OpenAIRE

Piai, V.; Roelofs, A.P.A.; Schriefers, H.J.

2015-01-01

Evidence from dual-task performance indicates that speakers prefer not to select simultaneous responses in picture naming and another unrelated task, suggesting a response selection bottleneck in naming. In particular, when participants respond to tones with a manual response and name pictures with superimposed semantically related or unrelated distractor words, semantic interference in naming tends to be constant across stimulus onset asynchronies (SOAs) between the tone stimulus and the pic...

Effects of navigated TMS on object and action naming

Directory of Open Access Journals (Sweden)

Julio Cesar Hernandez-Pavon

2014-09-01

Full Text Available Transcranial magnetic stimulation (TMS has been used to induce speech disturbances and to affect speech performance during different naming tasks. Lately, repetitive navigated TMS (nTMS has been used for non-invasive mapping of cortical speech-related areas. Different naming tasks may give different information that can be useful for presurgical evaluation. We studied the sensitivity of object and action naming tasks to nTMS and compared the distributions of cortical sites where nTMS produced naming errors. Eight healthy subjects named pictures of objects and actions during repetitive nTMS delivered to semi-random left-hemispheric sites. Subject-validated image stacks were obtained in the baseline naming of all pictures before nTMS. Thereafter, nTMS pulse trains were delivered while the subjects were naming the images of objects or actions. The sessions were video-recorded for offline analysis. Naming during nTMS was compared with the baseline performance. The nTMS-induced naming errors were categorized by error type and location. nTMS produced no-response errors, phonological paraphasias, and semantic paraphasias. In seven out of eight subjects, nTMS produced more errors during object than action naming. Both intrasubject and intersubject analysis showed that object naming was significantly more sensitive to nTMS. When the number of errors was compared according to a given area, nTMS to postcentral gyrus induced more errors during object than action naming. Object naming is apparently more easily disrupted by TMS than action naming. Different stimulus types can be useful for locating different aspects of speech functions. This provides new possibilities in both basic and clinical research of cortical speech representations.

In the Names of Chinese Women.

Science.gov (United States)

Lee, Wen Shu

1998-01-01

Contributes to both feminist scholarship and Chinese Studies by coming to grips with the deep, culturally embedded, and politically significant meaning of the names given to Chinese women. Uses the analysis of two names to advance theory that will link and enrich rhetorical, feminist, and intercultural studies and break through the limits of…

32 CFR 635.6 - Name checks.

Science.gov (United States)

2010-07-01

... 32 National Defense 4 2010-07-01 2010-07-01 true Name checks. 635.6 Section 635.6 National Defense Department of Defense (Continued) DEPARTMENT OF THE ARMY (CONTINUED) LAW ENFORCEMENT AND CRIMINAL INVESTIGATIONS LAW ENFORCEMENT REPORTING Records Administration § 635.6 Name checks. (a) Information contained in military police records may be...

Name Stanislaus (Stanisław in Slavic Onomastic Tradition

Directory of Open Access Journals (Sweden)

Franciszek Sowa

2003-12-01

Full Text Available St. Stanislaus, bishop and martyr, is one of the few saints of the Church bearing a traditional Slavic name. It belongs to an Indo-European Anthroponomastic system as a compound name whose components represent a pattern inherited from the period of the Indo-European community. This is a fortune-telling name (a nomen-omen given to a child on a wish of the parents, who wanted him to be famous (Polish ‘slawa’ means ‘fame’- Today, in our Christian culture, in choosing a name for the child we consider the following: 1 the child ‘brought’ his/her name (i.e. is given the name of the day’s patron; this is the gist of our ‘nameday’, 2 a family tradition, 3 respect for the grandfather or father (grandmother, mother, 4 fashion. Today’s anthroponomastic system in Slavic languages (except Bulgarian has grown cold leaving us unable to acquire precise understanding of the meaning of the name. Besides, nowadays names only denote, they do not mean anything. Compound Slavic names refer in their structure to names from other groups of the Indo-European community and are closely linked with a nation’s spiritual culture and appropriate ultimate and instrumental values. In Indo-European languages a different number of lexical components is used in names as their first or second part: in Old Indian - 865; in Old Persian and Median - 43; in Greek - 1015; in the Celtic group - 336; the German one - 1800 and in the Slavic group - 220. The most numerous in Old Polish anthroponomastics were names with the component slaw. As the first component - slaw appears in 4 names, and as the second, in 100. This component has appeared from times immemorial in Indian, Avestan, Greek and Illyrian names. Name Stanislaus is known in all Slavic countries, while its feminine form only in Polish, Bulgarian, Serb and Croatian. In Poland it has been in use since very old times up to now. Numerous surnames and names of places derive from it. The popularity of the name

27 CFR 46.126 - Change in name or address.

Science.gov (United States)

2010-04-01

... 27 Alcohol, Tobacco Products and Firearms 2 2010-04-01 2010-04-01 false Change in name or address... (occupational) Tax Stamps § 46.126 Change in name or address. (a) Change in name. If there is a change in the corporate or firm name, or in the trade name, as shown on TTB Form 5630.5t, the taxpayer must file an...

Enhanced Source Memory for Names of Cheaters

OpenAIRE

Raoul Bell; Axel Buchner

2009-01-01

The present experiment shows that source memory for names associated with a history of cheating is better than source memory for names associated with irrelevant or trustworthy behavior, whereas old-new discrimination is not affected by whether a name was associated with cheating. This data pattern closely replicates findings obtained in previous experiments using facial stimuli, thus demonstrating that enhanced source memory for cheaters is not due to a cheater-detection module closely tied ...

Precedent Proper Names in Informal Oikonymy

Directory of Open Access Journals (Sweden)

Maria V. Akhmetova

2013-06-01

Full Text Available The paper deals with the Russian language informal city names (oikonyms motivated by other toponyms (with reference to Russia and the CIS. The author shows that the motivating proper name can replace the city name (e. g. Глазго < Glasgow ‘Glazov’ or contaminate with it (e. g. Экибостон < Ekibastuz + Boston, the “alien” onym being attracted to construct an informal oikonym due to its phonetic similarity or, on occasion, due to an affinity, either real or imaginary, between the two settlements. The author argues that the phonetic motivation is more characteristic for the modern urban tradition, than for popular dialects.

Task choice and semantic interference in picture naming

NARCIS (Netherlands)

Piai, V.; Roelofs, A.P.A.; Schriefers, H.J.

2015-01-01

Evidence from dual-task performance indicates that speakers prefer not to select simultaneous responses in picture naming and another unrelated task, suggesting a response selection bottleneck in naming. In particular, when participants respond to tones with a manual response and name pictures with

What’s in a name depends on the type of name: The relationships between semantic and phonological access, reading fluency and reading comprehension

DEFF Research Database (Denmark)

Poulsen, Mads; Elbro, Carsten

2013-01-01

examined both components in naming tasks – with isolated letters (phonological) and pictures (semantic). Seventy-five Grade 5 students were administered measures of letter and picture naming speed, word and nonword reading fluency, reading comprehension, together with control measures of vocabulary....... The results showed that letter naming was a unique predictor of word reading fluency, while picture naming was not. Conversely, picture naming speed contributed unique variance to reading comprehension, while letter naming did not. The results indicate that phonological and semantic lexical access speed...

Effect of a synesthete's photisms on name recall.

Science.gov (United States)

Mills, Carol Bergfeld; Innis, Joanne; Westendorf, Taryn; Owsianiecki, Lauren; McDonald, Angela

2006-02-01

A multilingual, colored-letter synesthete professor (MLS), 9 nonsynesthete multilingual professors and 4 nonsynesthete art professors learned 30 names of individuals (first and last name pairs) in three trials. They recalled the names after each trial and six months later, as well as performed cued recall trials initially and after six months. As hypothesized, MLS recalled significantly more names than control groups on all free recall tests (except after the first trial) and on cued recall tests. In addition, MLS gave qualitatively different reasons for remembering names than any individual control participant. MLS gave mostly color reasons for remembering the names, whereas nonsynesthetes gave reasons based on familiarity or language or art knowledge. Results on standardized memory tests showed that MLS had average performance on non-language visual memory tests (the Benton Visual Retention Test-Revised--BURT-R, and the Rey-Osterrieth Complex Figure Test--CFT), but had superior memory performance on a verbal test consisting of lists of nouns (Rey Auditory-Verbal Learning Test--RAVLT). MLS's synesthesia seems to aid memory for visually or auditorily presented language stimuli (names and nouns), but not for non-language visual stimuli (simple and complex figures).

Sustained Attention Ability Affects Simple Picture Naming

Directory of Open Access Journals (Sweden)

Suzanne R. Jongman

2017-07-01

Full Text Available Sustained attention has previously been shown as a requirement for language production. However, this is mostly evident for difficult conditions, such as a dual-task situation. The current study provides corroborating evidence that this relationship holds even for simple picture naming. Sustained attention ability, indexed both by participants’ reaction times and individuals’ hit rate (the proportion of correctly detected targets on a digit discrimination task, correlated with picture naming latencies. Individuals with poor sustained attention were consistently slower and their RT distributions were more positively skewed when naming pictures compared to individuals with better sustained attention. Additionally, the need to sustain attention was manipulated by changing the speed of stimulus presentation. Research has suggested that fast event rates tax sustained attention resources to a larger degree than slow event rates. However, in this study the fast event rate did not result in increased difficulty, neither for the picture naming task nor for the sustained attention task. Instead, the results point to a speed-accuracy trade-off in the sustained attention task (lower accuracy but faster responses in the fast than in the slow event rate, and to a benefit for faster rates in the picture naming task (shorter naming latencies with no difference in accuracy. Performance on both tasks was largely comparable, supporting previous findings that sustained attention is called upon during language production.

Infant VEPs reveal neural correlates of implicit naming: Lateralized differences between lexicalized versus name-unknown pictures

Science.gov (United States)

Styles, Suzy J.; Plunkett, Kim; Duta, Mihaela D.

2015-01-01

Recent behavioural studies with toddlers have demonstrated that simply viewing a picture in silence triggers a cascade of linguistic processing which activates a representation of the picture’s name (Mani and Plunkett, 2010, 2011). Electrophysiological studies have also shown that viewing a picture modulates the auditory evoked potentials (AEPs) triggered by later speech, from early in the second year of life (Duta et al., 2012; Friedrich and Friederici, 2005; Mani et al., 2011) further supporting the notion that picture viewing gives rise to a representation of the picture’s name against which later speech can be matched. However, little is known about how and when the implicit name arises during picture viewing, or about the electrophysiological activity which supports this linguistic process. We report differences in the visual evoked potentials (VEPs) of fourteen-month-old infants who saw photographs of animals and objects, some of which were name-known (lexicalized), while waiting for an auditory label to be presented. During silent picture viewing, lateralized neural activity was selectively triggered by lexicalized items, as compared to nameless items. Lexicalized items generated a short-lasting negative-going deflection over frontal, left centro-temporal, and left occipital regions shortly after the picture appeared (126–225 ms). A positive deflection was also observed over the right hemisphere (particularly centro-temporal regions) in a later, longer-lasting window (421–720 ms). The lateralization of these differences in the VEP suggests the possible involvement of linguistic processes during picture viewing, and may reflect activity involved in the implicit activation of the picture’s name. PMID:26232744

48 CFR 411.170 - Brand name or equal.

Science.gov (United States)

2010-10-01

... 48 Federal Acquisition Regulations System 4 2010-10-01 2010-10-01 false Brand name or equal. 411... ACQUISITION PLANNING DESCRIBING AGENCY NEEDS Selecting and Developing Requirements Documents 411.170 Brand name or equal. (a) A “brand name or equal” purchase description shall include the following type of...

Dgroup: DG01620 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG01620 DGroup Tamoxifene-type antineoplastic -ifen(e) ... DG00734 ... Tamoxifen ... D08559 ... Tam...oxifen (INN) ... D00966 ... Tamoxifen citrate (JP17/USP) ... DG00735 ... Toremifene ... D08620 ... Toremifene (INN) ... D0...USAN/INN) D09380 ... Sivifene (USAN/INN) Other ... DG01619 ... Clomifene and tamoxifen derivative ... Antiestrogens or e

Tagging Named Entities in Croatian Tweets

Directory of Open Access Journals (Sweden)

Krešimir Baksa

2017-01-01

Full Text Available Named entity extraction tools designed for recognizing named entities in texts written in standard language (e.g., news stories or legal texts have been shown to be inadequate for user-generated textual content (e.g., tweets, forum posts. In this work, we propose a supervised approach to named entity recognition and classification for Croatian tweets. We compare two sequence labelling models: a hidden Markov model (HMM and conditional random fields (CRF. Our experiments reveal that CRF is the best model for the task, achieving a very good performance of over 87% micro-averaged F1 score. We analyse the contributions of different feature groups and influence of the training set size on the performance of the CRF model.

The change of religion and the names

Directory of Open Access Journals (Sweden)

John Kousgård Sørensen

1990-01-01

Full Text Available What actually happened at the time when Denmark was christianized? An important viewpoint to the topic is the nomenclature, both personal names and place-names. What happened to these in the missionary period? Can they be exploited as evidence about the change of religion? What happened to these and to the naming practices in connection with the introduction of Christianity? These questions are relevant, because several pre-Christian cultic words entered into the personal nomenclature which the Christian mission found in use on its arrival. The fate of the nomenclature in the period does suggest that the change in religion took place reasonably peacefully and gradually. There are, however, certain features about the place-names suggesting that there were local differences in the conduct of the mission.

27 CFR 555.56 - Change in trade name.

Science.gov (United States)

2010-04-01

... 27 Alcohol, Tobacco Products and Firearms 3 2010-04-01 2010-04-01 false Change in trade name. 555... trade name. A licensee or permittee continuing to conduct business or operations at the location shown... in trade name under which he conducts his business or operations. However, the licensee or permittee...

Method and System for Name Resolution Across Heterogeneous Architectures

Science.gov (United States)

Sevilla, Spencer (Inventor); Mahadevan, Priya (Inventor); Garcia-Luna-Aceves, Jose J. (Inventor)

2018-01-01

One embodiment of the present invention provides a system for resolving a name request in a network comprising a plurality of groups that use different name-resolution schemes. During operation, the system receives, at a first group, the name request; identifies a parent group of the first group, which is a member of the parent group; and in response to failing to resolve the name request within the first group, forwards the name request to the identified parent group.

Abbreviations of polymer names and guidelines for abbreviating polymer names (IUPAC Recommendations 2014)

Czech Academy of Sciences Publication Activity Database

He, J.; Chen, J.; Hellwich, K. H.; Hess, M.; Horie, K.; Jones, R. G.; Kahovec, Jaroslav; Kitayama, T.; Kratochvíl, Pavel; Meille, S. V.; Mita, I.; dos Santos, C.; Vert, M.; Vohlídal, J.

2014-01-01

Roč. 86, č. 6 (2014), s. 1003-1015 ISSN 0033-4545 Institutional support: RVO:61389013 Keywords : abbreviations * IUPAC Polymer Division * polymer names Subject RIV: CD - Macromolecular Chemistry Impact factor: 2.492, year: 2014

Should general practitioners call patients by their first names?

Science.gov (United States)

McKinstry, B

1990-10-06

To assess the acceptability to patients of the use of patients' first names by doctors and doctors' first names by patients in general practice. An administered questionnaire survey. 5 General practices in Lothian. 475 Patients consulting 30 general practitioners. Response by patients to questionnaire on attitude to use of first names. Most of the patients either liked (223) or did not mind (175) being called by their first names. Only 77 disliked it, most of whom were aged over 65. Most patients (324) did not, however, want to call the doctor by his or her first name. General practitioners should consider using patients' first names more often, particularly with younger patients.

Changing the Family Name by Administrative Means

Directory of Open Access Journals (Sweden)

Duret Nicu

2009-06-01

Full Text Available In the Roman law, changing the name was possible except for the case in which this changewould have been fraudulent. This possibility was kept also in the Middle Age but with some restrictions:the handicraftsmen were not allowed to change their name when it served as a factory brand, the notarycould not change his name without having an authorization, and neither could he change his normalsignature. Gradually, the monarchy increased its control in this matter, tending to transform a socialinstitution into a police one.

THE RELATIONSHIP BETWEEN NUMBER NAMES AND NUMBER CONCEPTS

DEFF Research Database (Denmark)

Ejersbo, Lisser Rye; Misfeldt, Morten

Different countries have different names for numbers. These names are often related in a regular way to the base-10 place value system used for writing numbers as digits. However, in several languages, this regularity breaks down (e.g., between 10 and 20), and there is limited knowledge of how th......, a second, regular set of number names is introduced in primary school. The study’s findings suggest that the regularity of number names influences the development of number concepts and creates a positive impact on the understanding of the base-10 system....

We Are Going to Name Names and Call You Out! Improving the Team in the Academic Operating Room Environment.

Science.gov (United States)

Bodor, Richard; Nguyen, Brian J; Broder, Kevin

2017-05-01

Communication failures between multidisciplinary teams can impact efficiency, performance, and morale. Academic operating rooms (ORs) often have surgical, anesthesia, and nursing teams, each teaching multiple trainees. Incorrectly identifying name and "rank" (postgraduate year [PGY]) of resident trainees can disrupt performance evaluations and team morale and even potentially impair delivery of quality care when miscommunication errors proliferate. Our OR-based survey asked 50 participants (18 surgeons, 14 anesthesiologists, and 18 nursing members), to recall basic identification data including provider names and PGY levels from their recent collaborating OR teams. Participants also weighed in on the importance of using accurate "names and ranks" for all OR participants. Each service reliably knew their own team members' names and rank. However, surgery and anesthesia teams displayed decreased knowledge about their lower level trainees, whereas nursing teams performed best, identifying all level nurses present. Deficits occurred whenever participants tried recalling basic identifying data about contributors from any other collaborating team. Typically, misidentified participants were lower level PGY residents working on other teams' services. All survey respondents desired improving systems to better remember "names and ranks" identifications among OR participants, citing both safety and team morale benefits. Many fail to know the names and ranks of contributors among members of different OR teams. Even our most reliable nursing team was inconsistent at identification information from collaborating practitioners. Despite universally acknowledged benefits, participants rarely learned basic background identification data beyond their own team. Those surveyed all desired improving identifications with suggestions including sterile name and rank tags and proper notification of entry and exit from the OR. Because successful collaborations require appropriate level task

Dgroup: DG01465 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available D08064 ... Ifenprodil (INN) ... D01445 ... Ifenprodil tartrate (JP17); Ifenprodil tartrate fine granules (JP17); Ifenprodil tartrate tablet...NN) ... D00560 ... Pimozide (JP17/USP/INN) ... D00561 ... Sertindole (USAN/INN) ... D01674 ... Naftopidil (JP17/INN); Naftopidil tablet...s (JP17); Naftopidil orally disintegrating tablets (JP17) ... D019

Sociolinguistic import of name-clipping among Omambala cultural ...

African Journals Online (AJOL)

This study examines the perceived but obvious manifestation of name-clipping among Omambala cultural zone of Anambra State. This situation has given rise to distortion of names and most often, to either mis-interpretation or complete loss of the original and full meanings of the names. This situation of misinterpretation is ...

The Names of God in Jewish Mysticism

Directory of Open Access Journals (Sweden)

Konstantin Burmistrov

2014-12-01

Full Text Available The concept of the names of God and their role in the creation and existence of the world, as well as the practice of their veneration constitute an essential part of Judaism in general, and are elaborated in detail in Jewish mysticism. In Kabbalah, an idea of the creative power of the Tetragrammaton (the ineff able four-letter Name and other names occupies an especially prominent place. It is based on the idea of linguistic mysticism conveyed in the Jewish mystical treatise Sefer Yetzirah (“Book of Creation”, 3–6 centuries AD.. According to this ancient text, the creation of the world is seen as a linguistic process in which the Hebrew letters are thought of as both the creative forces and the material of which the world is created. The article analyses the main features of the symbolism of the divine names in medieval Kabbalah. We have identifi ed two main areas in the understanding of the divine names, peculiar to the two main schools of classical medieval Kabbalah — theosophical (theurgic and ecstatic (prophetic. The ideas of these schools are considered according to the works of two prominent kabbalists of the 13th c. — Joseph Gikatilla and Abraham Abulafi a. In the fi rst of these schools, knowing the names of God leads to the actualization of the latent mystical forces and results in a transformation and reintegration of our world and the world of the divine. This process, in turn, is understood as having an eschatological and messianic signifi cance. Abraham Abulafi a elaborated sophisticated practices of combining the divine names aimed at transforming the adept’s consciousness, its purifi cation and development of special mental abilities. At the end of the mystical path the practitioner achieves the state of prophecy and eventually merges with the Divine.

Electron transport properties of indium oxide - indium nitride metal-oxide-semiconductor heterostructures

International Nuclear Information System (INIS)

Wang, C.Y.; Hauguth, S.; Polyakov, V.; Schwierz, F.; Cimalla, V.; Kups, T.; Himmerlich, M.; Schaefer, J.A.; Krischok, S.; Ambacher, O.; Morales, F.M.; Lozano, J.G.; Gonzalez, D.; Lebedev, V.

2008-01-01

The structural, chemical and electron transport properties of In 2 O 3 /InN heterostructures and oxidized InN epilayers are reported. It is shown that the accumulation of electrons at the InN surface can be manipulated by the formation of a thin surface oxide layer. The epitaxial In 2 O 3 /InN heterojunctions show an increase in the electron concentration due to the increasing band banding at the heterointerface. The oxidation of InN results in improved transport properties and in a reduction of the sheet carrier concentration of the InN epilayer very likely caused by a passivation of surface donors. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

27 CFR 41.221 - Change in trade name.

Science.gov (United States)

2010-04-01

... 27 Alcohol, Tobacco Products and Firearms 2 2010-04-01 2010-04-01 false Change in trade name. 41.221 Section 41.221 Alcohol, Tobacco Products and Firearms ALCOHOL AND TOBACCO TAX AND TRADE BUREAU... Change in trade name. Where there is a change in, or an addition or discontinuance of, a trade name used...

27 CFR 44.102 - Change in trade name.

Science.gov (United States)

2010-04-01

... 27 Alcohol, Tobacco Products and Firearms 2 2010-04-01 2010-04-01 false Change in trade name. 44.102 Section 44.102 Alcohol, Tobacco Products and Firearms ALCOHOL AND TOBACCO TAX AND TRADE BUREAU... Warehouse Proprietors Changes in Name § 44.102 Change in trade name. Where there is a change in, or an...

Correlates of Gay-Related Name-Calling in Schools

Science.gov (United States)

Slaatten, Hilde; Hetland, Jørn; Anderssen, Norman

2015-01-01

The aim of this study was to examine whether attitudes about gay-related name-calling, social norms concerning gay-related name-calling among co-students, teacher intervention, and school-related support would predict whether secondary school pupils had called another pupil a gay-related name during the last month. A total of 921 ninth-grade…

Origin names of gochu, kimchi, and bibimbap

Directory of Open Access Journals (Sweden)

Hye-Jeong Yang

2015-12-01

Conclusion: Gochu, kimchi, and bibimbap have thousands of years of history and have been called with pure Korean name words. It was only that they were recorded in the form of hanja during the time written Korean was undervalued where people insisted borrowing Chinese characters to write despite written Korean being available. Thus, gocho (苦椒, chimchae (沈菜, and koldonban (滑董飯 are not the origin names. The pure Korean names used even by the people back then are the actual ones: gochyo (고쵸, dimchae (딤, and bubuimbap (부뷤밥.

Opening a Pandora's Box: Proper Names in English Phraseology

Directory of Open Access Journals (Sweden)

Pierini, Patrizia

2008-01-01

Full Text Available This article explores the linguistic-cultural aspects and usage of phraseological units involving personal and place names in English. The introductory sections outline the linguistic features of proper names and phraseological units. The qualitative part of this study provides a list of units belonging to four phraseological types (idioms, stereotyped similes, binomials, formulae, drawn from idiom dictionaries. An investigation of the sources of names shows that the personal and place names involved are historically, socially or culturally prominent in British culture. Here is noted a predominance of personal over place names, and within the former, a predominance of male over female names, and first names over family names, with a number of hypocorisms. The quantitative part of the study consists of a corpus search of the selected units in the British National Corpus in order to find their frequency and distribution across registers. The search reveals that they have very low levels of occurrence, and are more commonly used in written registers, in particular, in fiction, journalism and miscellaneous texts.

English Shop Signs and Brand Names

Directory of Open Access Journals (Sweden)

Parvaneh Khosravizadeh

2016-07-01

Full Text Available The present study tries to investigate the people’s attitude to the use of English words in TV commercials, brand-naming and shop signs in Iran and specifically in Tehran where due to the fact that it is the capital, more English might be used for the sake of foreigners. The widespread use of English shop signs and English brand names for recently produced goodsdrove the researchers to investigate peoples’ attitude as consumers from two aspects of age and education. To reach the research goal, a questionnaire was devised and distributed to 100 people at random selection probing their attitudes while considering two factors of age and education. The result of the research will mostly benefit sociolinguists and business marketers.Keywords: age, education, advertising, brand-naming, shop signs, globalization

Names For Free

DEFF Research Database (Denmark)

Pouillard, Nicolas; Bernardy, Jean-Philippe

2013-01-01

We propose a novel technique to represent names and binders in Haskell. The dynamic (run-time) representation is based on de Bruijn indices, but it features an interface to write and manipulate variables conviently, using Haskell-level lambdas and variables. The key idea is to use rich types...... and manipulation in a natural way, while retaining the good properties of representations based on de Bruijn indices....

Preliminary economic evaluation of the Alkox process

International Nuclear Information System (INIS)

Silva, L.J.; Lilga, M.A.; Camaioni, D.M.; Snowden, L.J.

1991-09-01

A new chemical process has been invented at Battelle Pacific Northwest Laboratories for converting alkanes to alcohols. This new chemistry has been named the ''Alkox Process.'' Pacific Northwest Laboratory prepared a preliminary economic analysis for converting cyclohexane to cyclohexanol, which may be one of the most attractive applications of the Alkox process. A process flow scheme and a material balance were prepared to support rough equipment sizing and costing. The results from the economic analysis are presented in the non-proprietary section of this report. The process details, including the flow diagram and material balance, are contained in separate section of this report that is proprietary to Battelle. 7 refs., 4 tabs

48 CFR 52.211-6 - Brand name or equal.

Science.gov (United States)

2010-10-01

... 48 Federal Acquisition Regulations System 2 2010-10-01 2010-10-01 false Brand name or equal. 52....211-6 Brand name or equal. As prescribed in 11.107(a), insert the following provision: Brand Name or Equal (AUG 1999) (a) If an item in this solicitation is identified as “brand name or equal,” the...

27 CFR 478.53 - Change in trade name.

Science.gov (United States)

2010-04-01

... 27 Alcohol, Tobacco Products and Firearms 3 2010-04-01 2010-04-01 false Change in trade name. 478....53 Change in trade name. A licensee continuing to conduct business at the location shown on his license is not required to obtain a new license by reason of a mere change in trade name under which he...

27 CFR 40.92 - Change in trade name.

Science.gov (United States)

2010-04-01

... 27 Alcohol, Tobacco Products and Firearms 2 2010-04-01 2010-04-01 false Change in trade name. 40.92 Section 40.92 Alcohol, Tobacco Products and Firearms ALCOHOL AND TOBACCO TAX AND TRADE BUREAU... Changes in Name § 40.92 Change in trade name. Where there is a change in, or an addition or discontinuance...

Indexing concepts and/or named entities Indicizzare concetti e/o named entities

Directory of Open Access Journals (Sweden)

Pino Buizza

2011-12-01

Full Text Available

A partire da un punto di vista semantico più che morfologico, l'articolo è focalizzato il problema del significato dei nomi propri, con contributi della filosofia del linguaggio e della linguistica semantica. Sono indagate le entità individuali: il loro isolamento all’interno della rete di soggetti e la relazione esemplificativa, il trattamento nelle classificazioni. Le profonde diversità rilevate fra concetti e entità denominate suggeriscono di dichiararle esplicitamente da un punto di vista teorico e di adottare dispositivi che diano risultati unitari ma chiaramente distinguibili nei sistemi di recupero dell’informazione.  
Questo contributo è stato presentato col titolo Indexing concepts and/or named entities all'11th ISKO Conference, Paradigms and conceptual systems in knowledge organization, Roma, 23-26 febbraio 2010, non pubblicato negli atti, e qui leggermente ampliato.

Indonesian name matching using machine learning supervised approach

Science.gov (United States)

Alifikri, Mohamad; Arif Bijaksana, Moch.

2018-03-01

Most existing name matching methods are developed for English language and so they cover the characteristics of this language. Up to this moment, there is no specific one has been designed and implemented for Indonesian names. The purpose of this thesis is to develop Indonesian name matching dataset as a contribution to academic research and to propose suitable feature set by utilizing combination of context of name strings and its permute-winkler score. Machine learning classification algorithms is taken as the method for performing name matching. Based on the experiments, by using tuned Random Forest algorithm and proposed features, there is an improvement of matching performance by approximately 1.7% and it is able to reduce until 70% misclassification result of the state of the arts methods. This improving performance makes the matching system more effective and reduces the risk of misclassified matches.

Task choice and semantic interference in picture naming.

Science.gov (United States)

Piai, Vitória; Roelofs, Ardi; Schriefers, Herbert

2015-05-01

Evidence from dual-task performance indicates that speakers prefer not to select simultaneous responses in picture naming and another unrelated task, suggesting a response selection bottleneck in naming. In particular, when participants respond to tones with a manual response and name pictures with superimposed semantically related or unrelated distractor words, semantic interference in naming tends to be constant across stimulus onset asynchronies (SOAs) between the tone stimulus and the picture-word stimulus. In the present study, we examine whether semantic interference in picture naming depends on SOA in case of a task choice (naming the picture vs reading the word of a picture-word stimulus) based on tones. This situation requires concurrent processing of the tone stimulus and the picture-word stimulus, but not a manual response to the tones. On each trial, participants either named a picture or read aloud a word depending on the pitch of a tone, which was presented simultaneously with picture-word onset or 350 ms or 1000 ms before picture-word onset. Semantic interference was present with tone pre-exposure, but absent when tone and picture-word stimulus were presented simultaneously. Against the background of the available studies, these results support an account according to which speakers tend to avoid concurrent response selection, but can engage in other types of concurrent processing, such as task choices. Copyright © 2015 Elsevier B.V. All rights reserved.

14 CFR 119.9 - Use of business names.

Science.gov (United States)

2010-01-01

... 14 Aeronautics and Space 3 2010-01-01 2010-01-01 false Use of business names. 119.9 Section 119.9... COMMERCIAL OPERATORS General § 119.9 Use of business names. (a) A certificate holder under this part may not operate an aircraft under part 121 or part 135 of this chapter using a business name other than a business...

Testing protects against proactive interference in face-name learning.

Science.gov (United States)

Weinstein, Yana; McDermott, Kathleen B; Szpunar, Karl K

2011-06-01

Learning face-name pairings at a social function becomes increasingly more difficult the more individuals one meets. This phenomenon is attributable to proactive interference--the negative influence of prior learning on subsequent learning. Recent evidence suggests that taking a memory test can alleviate proactive interference in verbal list learning paradigms. We apply this technique to face-name pair learning. Participants studied four lists of 12 face-name pairings and either attempted to name the 12 faces just studied after every list or did not. Recall attempts after every list improved learning of the fourth list by over 100%. Moreover, no reduction in learning of face-name pairings occurred from list 1 to list 4 for participants who attempted to name studied faces between lists. These results suggest that testing oneself on the names of a group of new acquaintances before moving on to the next group is an effective mnemonic technique for social functions.

Theriocide: Naming Animal Killing

Directory of Open Access Journals (Sweden)

Piers Beirne

2014-08-01

Full Text Available In this essay I recommend ‘theriocide’ as the name for those diverse human actions that cause the deaths of animals. Like the killing of one human by another, theriocide may be socially acceptable or unacceptable, legal or illegal. It may be intentional or unintentional and may involve active maltreatment or passive neglect. Theriocide may occur one-on-one, in small groups or in large-scale social institutions. The numerous and sometimes intersecting sites of theriocide include intensive rearing regimes; hunting and fishing; trafficking; vivisection; militarism; pollution; and human-induced climate change. If the killing of animals by humans is as harmful to them as homicide is to humans, then the proper naming of such deaths offers a remedy, however small, to the extensive privileging of human lives over those of other animals. Inevitably, the essay leads to a shocking question: Is theriocide murder?

Enhanced Source Memory for Names of Cheaters

Directory of Open Access Journals (Sweden)

Raoul Bell

2009-04-01

Full Text Available The present experiment shows that source memory for names associated with a history of cheating is better than source memory for names associated with irrelevant or trustworthy behavior, whereas old-new discrimination is not affected by whether a name was associated with cheating. This data pattern closely replicates findings obtained in previous experiments using facial stimuli, thus demonstrating that enhanced source memory for cheaters is not due to a cheater-detection module closely tied to the face processing system, but is rather due to a more general bias towards remembering the source of information associated with cheating.

Dgroup: DG01936 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG01936 DGroup TNF inhibitor ... D00742 ... Etanercept (USAN/INN); Etanercept (genetica...l recombination) (JAN); Etanercept (genetical recombination) [etanercept biosimilar 1] (JAN) ... D02598 ... Infl...iximab (USAN/INN); Infliximab (genetical recombination) (JAN); Infliximab (genetical recombination) [Inflixi...mab biosimilar1] (JAN); Infliximab (genetical recombination) [Infliximab biosimil...ar2] (JAN) ... D07436 ... Afelimomab (INN) D02597 ... Adalimumab (USAN/INN); Adalimumab (genetical recombination) (

Is visual attention automatically attracted to one's own name?

DEFF Research Database (Denmark)

Bundesen, C; Kyllingsbæk, Søren; Houmann, K J

1997-01-01

Subjects were presented with briefly exposed visual displays of words that were common first names with a length of four to six letters. In the main experiment, each display consisted of four words: two names shown in red and two shown in white. The subject's task was to report the red names (tar......, visual attention was not automatically attracted by the subject's own name....

Passive Detection of Misbehaving Name Servers

Science.gov (United States)

2013-10-01

name servers that changed IP address five or more times in a month. Solid red line indicates those servers possibly linked to pharmaceutical scams . 12...malicious and stated that fast-flux hosting “is considered one of the most serious threats to online activities today” [ICANN 2008, p. 2]. The...that time, apparently independent of filters on name-server flux, a large number of pharmaceutical scams1 were taken down. These scams apparently

Semantic category interference in overt picture naming

NARCIS (Netherlands)

Maess, B.; Friederici, A.D.; Damian, M.F.; Meyer, A.S.; Levelt, W.J.M.

2002-01-01

The study investigated the neuronal basis of the retrieval of words from the mental lexicon. The semantic category interference effect was used to locate lexical retrieval processes in time and space. This effect reflects the finding that, for overt naming, volunteers are slower when naming pictures

Towards secure name resolution on the internet

NARCIS (Netherlands)

Grothoff, C.; Wachs, M.; Ermert, M.; Appelbaum, J.

2018-01-01

The Domain Name System (DNS) provides crucial name resolution functions for most Internet services. As a result, DNS traffic provides an important attack vector for spy agencies, as demonstrated by the QUANTUMDNS and MORECOWBELL programs of the NSA. This article reviews how DNS works, and explains

PENGATURAN PASSING OFF DALAM PENGGUNAAN DOMAIN NAME TERKAIT DENGAN MEREK

Directory of Open Access Journals (Sweden)

Herti Yunita Putri

2016-09-01

Full Text Available In cyber world we often hear about domain name’s term. Domain name is a unique name to identify the server computer’s name like a web server or email server on a computer network or Internet. Passing off also make causes confusion in using merk from a famous brand or merk on the goods and services. Selected domain name in the internet media often creates the similar domain name with the other parties. This similar domain name are often used by people who are not responsible to take advantages of the domain name for themself. This can be caused by the presence of competition from Internet media business. This things called passing off. This research is a normative juridical research with a qualitative analysis. The legal materials include primary legal, secondary law and tertiary legal materials. Collection technique applied is literary study. Legal materials were analyzed to see the argument implementation of the definition of merk, the definition of domain name, definition of passing off, passing off in use related by merk and domain name and the rules of law in Indonesia related by merk, domain name and passing off. Big wishes in the future it can assist as a basic reference and legal considerations which are useful in Indonesian law practice. There are two passing off related to the merk and domain name, called Crybersquatting and Tiposquatting. Domain name rules are not regulated clearly in merk regulation named Act No. 15 of 2001. It regulated in PP 24 Year 1993 about The Class List of Goods or Services In Merk, Telecommunications are included in the goods or services in merk. Domain name are regulated in UDRP (Uniform Dispute Resolution Policy with competent institutions called ICANN (Internet Corporation for Assigned Names and Numbers. Dalam dunia maya (cyber world, kita sering mendengar istilah domain name. Domain name adalah nama unik yang diberikan untuk mengidentifikasi nama server komputer seperti web server atau email server di

The United States Board on Geographic Names: Standardization or regulation?

Science.gov (United States)

Payne, R.L.

2000-01-01

The United States Board on Geographic Names was created in 1890 to standardize the use of geographic names on federal maps and documents, and was established in its present form in 1947 by public law. The Board is responsible for geographic name usage and application throughout the federal government and its members must approve a name change or new name before it can be applied to federal maps and publications. To accomplish its mission, the Board has developed principles, policies, and procedures for use in the standardization process. The Board is also responsible legally for the promulgation of standardized names, whether or not these names have ever been controversial, and today this is accomplished by the universal availability of electronic databases for domestic and foreign names. This paper examines the development of Board policies and the implementation of these policies to achieve standardization with a view to relating these policies and activities to questions of standardization or regulation. ?? 2000 by The American Name Society.

Dgroup: DG01645 [KEGG MEDICUS

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Full Text Available done (INN) ... D08122 ... Levomethadone hydrochloride DG01015 ... Hydroxychloroquine ... D08050 ... Hydroxychloroquine (INN) ... D02114 ... Hydroxychloroq...uine sulfate (JAN/USP) ... DG01021 ... Halofantrine ... D08033 ... Halofantrine (INN) ... D02485

The electronic band structures of InNxAs1-x, InNxSb1-x and InAsxSb1-x alloys

International Nuclear Information System (INIS)

Mohammad, Rezek; Katircioglu, Senay

2009-01-01

The band gap bowings of InN x As 1-x , InN x Sb 1-x , and InAs x Sb 1-x alloys defined by the optimized lattice constants are investigated using empirical tight binding (ETB) method. The present ETB energy parameters which take the nearest neighbor interactions into account with sp 3 d 2 basis are determined to be sufficient to provide a typical feature for the band gap bowings of the alloys. The band gap bowing parameter is found to be relatively large in both InN x As 1-x and InN x Sb 1-x compared to InAs x Sb 1-x alloys. Moreover, the variation of the fundamental band gaps of InN x Sb 1-x alloys is sharper than that of InN x As 1-x alloys for small concentrations of N. Besides, a small amount of nitrogen is determined to be more effective in InN x Sb 1-x than in InN x As 1-x alloys to decrease the corresponding effective masses of the electrons around Γ points

A Preliminary Study of the Practices of Personal Naming in Konso

Directory of Open Access Journals (Sweden)

Ongaye Oda Orkaydo

2016-05-01

Full Text Available This article presents the personal naming practices in Konso, a Cushitic-speaking people in southwest Ethiopia. Personal naming in Konso can be formal or informal. Formal personal names are given during a ceremony called sookata, while informal names are given either before or after the sookata ceremony. This article argues that the Konso have family names in their naming practice. This article analyses the typology of personal names in Konso and shows an intrinsic interplay between poetry, songs and personal names. The unitary state policies of the previous regimes and the proliferation of religions have resulted in trends in which people give Amharic or religious names to their children or replace indigenous Konso personal names either by Amharic or religious names. The new trends of changing indigenous names into Amharic and/or religious (mainly biblical names compromise the knowledge and role of the Konso language as an expression of culture and an identity marker.

The Translation of Chinese Dish Names

Institute of Scientific and Technical Information of China (English)

龚佳文

2015-01-01

The traditional food of a nation reflects its historical and cultural characteristics This thesis begins with an introduction to the translation situation of Chinese dish names and its existing problem nowadays, and proceeds to the translation principles and tactics for English translation of the names of Chinese dishes, based on Eugene A. Nida’ s Functional Equivalence, with an aim to improve translation efficiency and promote cross-cultural communication, and promoting Chinese food culture throughout the globe.

Child and Home Predictors of Children's Name Writing

Directory of Open Access Journals (Sweden)

Hope K. Gerde

2012-01-01

Full Text Available The current study used dominance analysis to investigate the relative importance of multiple factors on children's (ages 3–5; mean age of 47.3 months name writing skill when they enter preschool. Children ( were tested individually at the beginning of preschool on six factors thought to be important for name writing success: letter knowledge, decoding, motor skills, problem behaviors, self-regulation, and home literacy environment. Collectively, these variables explained 37.1% of the variation in children's name writing, but the importance of each factor differed widely. Children’s knowledge of capital letters (11.8% and their motor development (11.8% were the most important for children’s name writing whereas the home learning environment (2.3% and reported problem behaviors (1.5% were the least important factors. These findings suggest that researchers and teachers should focus on letter knowledge and motor development in understanding and promoting children’s name writing skills.

Automatic Recognition of Object Names in Literature

Science.gov (United States)

Bonnin, C.; Lesteven, S.; Derriere, S.; Oberto, A.

2008-08-01

SIMBAD is a database of astronomical objects that provides (among other things) their bibliographic references in a large number of journals. Currently, these references have to be entered manually by librarians who read each paper. To cope with the increasing number of papers, CDS develops a tool to assist the librarians in their work, taking advantage of the Dictionary of Nomenclature of Celestial Objects, which keeps track of object acronyms and of their origin. The program searches for object names directly in PDF documents by comparing the words with all the formats stored in the Dictionary of Nomenclature. It also searches for variable star names based on constellation names and for a large list of usual names such as Aldebaran or the Crab. Object names found in the documents often correspond to several astronomical objects. The system retrieves all possible matches, displays them with their object type given by SIMBAD, and lets the librarian make the final choice. The bibliographic reference can then be automatically added to the object identifiers in the database. Besides, the systematic usage of the Dictionary of Nomenclature, which is updated manually, permitted to automatically check it and to detect errors and inconsistencies. Last but not least, the program collects some additional information such as the position of the object names in the document (in the title, subtitle, abstract, table, figure caption...) and their number of occurrences. In the future, this will permit to calculate the 'weight' of an object in a reference and to provide SIMBAD users with an important new information, which will help them to find the most relevant papers in the object reference list.

Sex-Biased Sound Symbolism in English-Language First Names

Science.gov (United States)

Pitcher, Benjamin J.; Mesoudi, Alex; McElligott, Alan G.

2013-01-01

Sexual selection has resulted in sex-based size dimorphism in many mammals, including humans. In Western societies, average to taller stature men and comparatively shorter, slimmer women have higher reproductive success and are typically considered more attractive. This size dimorphism also extends to vocalisations in many species, again including humans, with larger individuals exhibiting lower formant frequencies than smaller individuals. Further, across many languages there are associations between phonemes and the expression of size (e.g. large /a, o/, small /i, e/), consistent with the frequency-size relationship in vocalisations. We suggest that naming preferences are a product of this frequency-size relationship, driving male names to sound larger and female names smaller, through sound symbolism. In a 10-year dataset of the most popular British, Australian and American names we show that male names are significantly more likely to contain larger sounding phonemes (e.g. “Thomas”), while female names are significantly more likely to contain smaller phonemes (e.g. “Emily”). The desire of parents to have comparatively larger, more masculine sons, and smaller, more feminine daughters, and the increased social success that accompanies more sex-stereotyped names, is likely to be driving English-language first names to exploit sound symbolism of size in line with sexual body size dimorphism. PMID:23755148

Cognitive abilities and creating metaphorical names

Directory of Open Access Journals (Sweden)

Avanesyan, Marina O.

2016-06-01

Full Text Available The cognitive processing of metaphor creation has been insufficiently investigated. Creating metaphors requires the ability to work in a fantastic, impossible context, using symbolic and associative means to express oneís thoughts. It has been shown recently that intelligence plays an important role in the creation of metaphors, but it is not the main factor in determining their success. The present research explores the roles of conceptual abilities, categorical abilities, and flexibility (as the factor creativity in metaphor creation. Participants (n = 38 young adults were asked to come up with names for three photos, without any special instruction to create metaphors. To classify conceptual abilities we used ìConceptual Synthesisî (M. A. Kholodnaya, 2012; to measure categorical ability we used the subtest ìSimilaritiesî (D. Wechsler, 1955; to identify the role of creativity in the metaphor process we used the test of ìUnusual Usesî (J. P. Guilford, 1960. The creation of complex metaphorical names was associated with a tendency to create highly organized mental structures and to retain them within the general semantic context (r = 0.344, p < 0.05. The tendency to create single-level situational connections was associated with a tendency to give specific names to photos (r = 0.475, p < 0.01. Photographic images proved out to be fruitful stimuli to investigate the processing of visual information. We developed a preliminary classification of names: 1 concrete; 2 situational; 3 abstract; 4 metaphorical (M1 and M2. We identified two types of metaphorical names — perceptual and complex metaphors — that relate to conceptual abilities in different ways. It is inaccurate to speak about a general concept of ìmetaphorical abilitiesî; we should differentiate the psychological mechanisms that lie at their base.

Dgroup: DG02000 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available AN/INN) DG01828 ... Deleobuvir ... D10554 ... Deleobuvir (USAN/INN) ... D10622 ... Deleobuvir sodium (JAN/USAN) D10477 ... Mericitabine (USAN/INN) Antiviral ... Treatment of hepatitis C NS5B polymerase ...

Age of acquisition and word frequency in written picture naming.

Science.gov (United States)

Bonin, P; Fayol, M; Chalard, M

2001-05-01

This study investigates age of acquisition (AoA) and word frequency effects in both spoken and written picture naming. In the first two experiments, reliable AoA effects on object naming speed, with objective word frequency controlled for, were found in both spoken (Experiment 1) and written picture naming (Experiment 2). In contrast, no reliable objective word frequency effects were observed on naming speed, with AoA controlled for, in either spoken (Experiment 3) or written (Experiment 4) picture naming. The implications of the findings for written picture naming are briefly discussed.

The voiced pronunciation of initial phonemes predicts the gender of names.

Science.gov (United States)

Slepian, Michael L; Galinsky, Adam D

2016-04-01

Although it is known that certain names gain popularity within a culture because of historical events, it is unknown how names become associated with different social categories in the first place. We propose that vocal cord vibration during the pronunciation of an initial phoneme plays a critical role in explaining which names are assigned to males versus females. This produces a voiced gendered name effect, whereby voiced phonemes (vibration of the vocal cords) are more associated with male names, and unvoiced phonemes (no vibration of the vocal cords) are more associated with female names. Eleven studies test this association between voiced names and gender (a) using 270 million names (more than 80,000 unique names) given to children over 75 years, (b) names across 2 cultures (the U.S. and India), and (c) hundreds of novel names. The voiced gendered name effect was mediated through how hard or soft names sounded, and moderated by gender stereotype endorsement. Although extensive work has demonstrated morphological and physical cues to gender (e.g., facial, bodily, vocal), this work provides a systematic account of name-based cues to gender. Overall, the current research extends work on sound symbolism to names; the way in which a name sounds can be symbolically related to stereotypes associated with its social category. (c) 2016 APA, all rights reserved).

Dgroup: DG01752 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available (USAN/INN); Interferon alfa-2a (genetical recombination) (JAN) ... D02745 ... Interferon alfa-2b (USAN); Interferon alfa-2b (genetica... Interferon alfa-n3 (USAN) DG01751 ... Interferon beta ... D00746 ... Interferon beta-1b (USAN/INN); Interferon beta-1b (genetica...D00747 ... Interferon gamma-1b (USAN/INN) ... D03357 ... Interferon gamma-1a (genetical recombination) (JAN) ... D...08805 ... Interferon gamma-n1 (JAN) D02744 ... Interferon alfacon-1 (USAN/INN); Interferon alfacon-1 (genetical re...combination) (JAN) D02747 ... Peginterferon alfa-2a (USAN/INN); Peginterferon alfa-2a (genetica

Measuring name system health

NARCIS (Netherlands)

Casalicchio, Emiliano; Caselli, Marco; Coletta, Alessio; Di Blasi, Salvatore; Fovino, Igor Nai; Butts, Jonathan; Shenoi, Sujeet

2012-01-01

Modern critical infrastructure assets are exposed to security threats arising from their use of IP networks and the Domain Name System (DNS). This paper focuses on the health of DNS. Indeed, due to the increased reliance on the Internet, the degradation of DNS could have significant consequences for

Research applications for an Object and Action Naming Battery to assess naming skills in adult Spanish-English bilingual speakers.

Science.gov (United States)

Edmonds, Lisa A; Donovan, Neila J

2014-06-01

Virtually no valid materials are available to evaluate confrontation naming in Spanish-English bilingual adults in the U.S. In a recent study, a large group of young Spanish-English bilingual adults were evaluated on An Object and Action Naming Battery (Edmonds & Donovan in Journal of Speech, Language, and Hearing Research 55:359-381, 2012). Rasch analyses of the responses resulted in evidence for the content and construct validity of the retained items. However, the scope of that study did not allow for extensive examination of individual item characteristics, group analyses of participants, or the provision of testing and scoring materials or raw data, thereby limiting the ability of researchers to administer the test to Spanish-English bilinguals and to score the items with confidence. In this study, we present the in-depth information described above on the basis of further analyses, including (1) online searchable spreadsheets with extensive empirical (e.g., accuracy and name agreeability) and psycholinguistic item statistics; (2) answer sheets and instructions for scoring and interpreting the responses to the Rasch items; (3) tables of alternative correct responses for English and Spanish; (4) ability strata determined for all naming conditions (English and Spanish nouns and verbs); and (5) comparisons of accuracy across proficiency groups (i.e., Spanish dominant, English dominant, and balanced). These data indicate that the Rasch items from An Object and Action Naming Battery are valid and sensitive for the evaluation of naming in young Spanish-English bilingual adults. Additional information based on participant responses for all of the items on the battery can provide researchers with valuable information to aid in stimulus development and response interpretation for experimental studies in this population.

Enhancing Communication through Gesture and Naming Therapy

Science.gov (United States)

Caute, Anna; Pring, Tim; Cocks, Naomi; Cruice, Madeline; Best, Wendy; Marshall, Jane

2013-01-01

Purpose: In this study, the authors investigated whether gesture, naming, and strategic treatment improved the communication skills of 14 people with severe aphasia. Method: All participants received 15 hr of gesture and naming treatment (reported in a companion article [Marshall et al., 2012]). Half the group received a further 15 hr of strategic…

77 FR 189 - Federal Acquisition Regulation; Brand-Name Specifications

Science.gov (United States)

2012-01-03

... 2006-0020, Sequence 26] RIN 9000-AK55 Federal Acquisition Regulation; Brand-Name Specifications... Management and Budget memoranda on brand-name specifications. DATES: Effective Date: February 2, 2012. FOR... brand- name specifications. Eight respondents submitted 32 comments in response to the interim rule. The...

Personal Names in Children's Speech: The Process of Acquisition

Directory of Open Access Journals (Sweden)

Galina R. Dobrova

2014-12-01

Full Text Available The article discusses the process of children’s understanding of the differences between proper and common names. The author emphasizes the role of the anthropocentric approach to personal names, especially when it is based on the study of the ontogenetic development of linguistic capacity focusing on the mechanisms of the formation of mental patterns of proper names, in particular — of personal names, and of their special linguistic status as (relatively “strict” designators. Analyzing recordings of children’s spontaneous speech and experimental data, the author argues that the study of the early stages of personal names acquisition, in comparison with the acquisition of common nouns, highlights such significant features of a child’s developing mind as the ability to distinguish between identifying and generalizing linguistic signs, to construct hyponym/hyperonym relations going from individual to the most generalized designations (from personal name to common nouns of different kinds, including relative, completely depending on the reference point, and reciprocal ones, e. g. kinship terms. Additionally, the author shows that the anthropocentric approach emphasizes such properties of personal names as their coreferentiality, relativity and their capacity to act as semiotic shifters as far as the choice of the form of a name depends on the social relations between the speaker and his addressee and their respective positions in the social hierarchy.

An Exploratory Study Of The Meaning And Perception Of Names ...

African Journals Online (AJOL)

In Nigeria, personal names particularly indigenous names are not arbitrarily given, they bear significant connotative meanings, reflecting the circumstance surrounding the birth of the bearer and the belief and philosophy of the name giver. The significance placed on names gives it immense psychological undertones.

Proper Names and Named Entities Recognition in the Automatic Text Processing. Review of the book: Nouvel, D., Ehrmann, M., & Rosset, S. (2016. Named Entities for Computational Linguistics. London; Hoboken: ISTE Ltd; John Wiley & Sons, Inc., 2016.

Directory of Open Access Journals (Sweden)

Daria M. Golikova

2018-03-01

Full Text Available The reviewed book by Damien Nouvel, Maud Ehrmann, and Sophie Rosset Named Entities for Computational Linguistics deals with automatic processing of texts, written in a natural language, and with named entities recognition, aimed at extracting most important information in these texts. The notion of named entities here extends to the entire set of linguistic units referring to an object. The researchers minutely consider the concept of named entities, juxtaposing this category to that of proper names and comparing their definitions, and describe all the stages of creation and implementation of automatic text annotation algorithms, as well as different ways of evaluating their performance quality. Proper names, in this context, are seen as a particular instance of named entities, one of the typical sources of reference to real objects to be electronically recognized in the text. The book provides a detailed overview and analysis of previous studies in the same field, based mainly on the English language data. It presents instruments and resources required to create and implement the algorithms in question, these may include typologies, knowledge or databases, and various types of corpora. Theoretical considerations, proposed by the authors, are supported by a significant number of exemplary cases, with algorithms operation principles presented in charts. The reviewed book gives quite a comprehensive picture of modern computational linguistic studies focused on named entities recognition and indicates some problems which are unresolved as yet.

Dgroup: DG01642 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available 7/USAN/INN); Fluconazole capsules (JP17) ... D01429 ... Fosfluconazole (JAN/INN) ... DG00375 ... Terbinafine ... D02375 ... Terbinafine... (USAN/INN) ... D02219 ... Terbinafine hydrochloride (JP17/USP) ... DG00441 ... Diclofenac ... D07816 ... Dicl

Dgroup: DG01636 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available analogue, fast-acting ... D04477 ... Insulin lispro (USP/INN); Insulin lispro (genetical recombination) (JAN) ... ... ... D04475 ... Insulin aspart (USAN/INN); Insulin aspart (genetical recombination) (JAN) ... D04540 ... Insulin glu...lisine (USAN/INN); Insulin glulisine (genetical recombination) (JAN) ... DG01797 ... Insulin analogue, long-acting ... D03250 ... Insulin glargine (USAN/INN); Insulin glargine (genetical recombinat...ion) (JP17); Insulin glargine (genetical recombination) injection (JP17); Insulin glargine (genetical recomb

Dgroup: DG01801 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available Insulin lispro (USP/INN); Insulin lispro (genetical recombination) (JAN) ... D04475 ... Insulin aspart (USAN/INN); Insulin aspart (genet...ical recombination) (JAN) ... D04540 ... Insulin glulisine (USAN/INN); Insulin glulisine (genetica...250 ... Insulin glargine (USAN/INN); Insulin glargine (genetical recombination) (JP17); Insulin glargine (genetica...l recombination) injection (JP17); Insulin glargine (genetical recombination [Insulin glargin biosimilar ...1] (JAN); Insulin glargine (genetical recombination) [Insulin glargin biosimilar

Proper Names in Dialectal Idioms: Stages of Idiomatization

Directory of Open Access Journals (Sweden)

Ekaterina S. Kogan

2014-06-01

Full Text Available The article deals with the functioning of proper names (both personal and place names and their derivatives in dialectal idioms. Based upon the criteria of the establishing of the idiomatic status of word combinations, traditionally used in contemporary lexicology, the author marks out four stages of the entry of units containing proper names and their derivatives into a regional idiomatic inventory: 1 word combinations with figurative meanings and transparent motivation easily decoded by every member of the local community (e. g., naryaditsa kak Anisya Klimovskaya ‘to be slovenly dressed’; 2 word combinations with a proper name localizing a nationally known idiom (e. g., zhelninsky telyonok ‘screaming person’; 3 word combinations including a name with a general meaning (e. g., Masha s Yashey ‘two inseparable persons’; 4 idioms with non-transparent motivation (e. g., tutursky pop ‘cuckoo male’. The analyzed data are retrieved from dialect dictionaries (including those of idioms and notes made by the Ural Federal University Toponymic Expeditions in Kostroma Region in 2011–2013.

MILITARY NAMES IN SOUTH AFRICA - QUO VADIS?

African Journals Online (AJOL)

pride and unit traditions. After the war and the subsequent demobilisation of the UDF the procedures for naming were described and certain require- ments laid down. During the term of office of the Minister of Defence at the time, F.C. Erasmus,the following proce- dure for naming was promulgated - a procedure that has not ...

Dgroup: DG01754 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available ... Taranabant (USAN/INN) D09349 ... Ibipinabant (USAN/INN) D10314 ... Giminabant (USAN/INN) Other ... DG01706 ... Antiobesity... ... DG01705 ... Anoretic ATC code: A08AX Antiobesity agents CNR1 [HSA:1268] [KO:K04277] ...

Open Issues of Stress Placement in Classical Names

Directory of Open Access Journals (Sweden)

Kajetan Gantar

2016-12-01

Full Text Available The paper begins by describing the author’s experiences with the Rules of the Slovene Orthography (1987, a project in which he participated for several years, counselling, for example, against such hybrid possessive adjectives in Slovene as Horačev (‘of Horace’, Properčev (‘of Propertius’, Leibničev (‘of Leibniz’, etc. There follows an analysis of the dilemmas raised by stress placement in classical names, both geographical and personal: dilemmas surprisingly reminiscent of those encountered by classical and later grammarians in stressing Greek names in the Latin language. Indeed, the Slovene tradition has sometimes adopted the Latin stress even with names of Greek origin, and in some cases the established stress is grounded neither in Greek nor Latin but rather borrowed from French or German. For frequently used and long-Slovenised classical names, the author advocates the preservation of the established stress. With names more rarely used, however, experts should be granted the right to keep the original stress without the stigma of ‘literalness’, which excludes this practice from the living language organism. Above all, the paper argues for the right of literary translators to adapt the stress of personal names in poetry translation to the rhythm and rules of the hexameter or other classical metrical schemes.

The determinants of spoken and written picture naming latencies.

Science.gov (United States)

Bonin, Patrick; Chalard, Marylène; Méot, Alain; Fayol, Michel

2002-02-01

The influence of nine variables on the latencies to write down or to speak aloud the names of pictures taken from Snodgrass and Vanderwart (1980) was investigated in French adults. The major determinants of both written and spoken picture naming latencies were image variability, image agreement and age of acquisition. To a lesser extent, name agreement was also found to have an impact in both production modes. The implications of the findings for theoretical views of both spoken and written picture naming are discussed.

Are names of children with attention deficit hyperactivity disorder more 'hyperactive'?

Science.gov (United States)

Shoval, Gal; Manor, Iris; Nahshoni, Eitan; Weizman, Abraham; Zalsman, Gil

2012-01-01

The role of the meaning of given names has been noted in psychotherapy as well as in everyday life. This study aimed to investigate the possible association between the nature of given names of children and attention deficit hyperactivity disorder (ADHD) diagnosis. A total of 134 given names of children and adolescent patients diagnosed as having ADHD were compared with those of an age- and gender-matched randomly chosen control group from the general population. The first names of the two cohorts were compared with regard to the following: the literal meaning of their names, whether the name constitutes a verb, the prevalence of each name and their length (number of syllables). The meaning of first names of children and adolescents with ADHD combined type were rated by referees as expressing significantly more activity and containing less syllables than the names of controls. In addition, the prevalence of their names was significantly lower than that of names used in the general population. All findings remained significant following Bonferroni adjustment. Our findings demonstrate an intriguing relationship between children's given names and ADHD diagnosis. Given names may serve as a possible predictor of later diagnosis of ADHD. Clinicians should be more attentive to given names in the context of child psychiatric evaluation and therapy. Copyright © 2012 S. Karger AG, Basel.

48 CFR 452.211-70 - Brand Name or Equal.

Science.gov (United States)

2010-10-01

... 48 Federal Acquisition Regulations System 4 2010-10-01 2010-10-01 false Brand Name or Equal. 452... FORMS SOLICITATION PROVISIONS AND CONTRACT CLAUSES Texts of Provisions and Clauses 452.211-70 Brand Name or Equal. As prescribed in 411.171, insert the following provision: Brand Name or Equal (NOV 1996...

How Does Using Object Names Influence Visual Recognition Memory?

Science.gov (United States)

Richler, Jennifer J.; Palmeri, Thomas J.; Gauthier, Isabel

2013-01-01

Two recent lines of research suggest that explicitly naming objects at study influences subsequent memory for those objects at test. Lupyan (2008) suggested that naming "impairs" memory by a representational shift of stored representations of named objects toward the prototype (labeling effect). MacLeod, Gopie, Hourihan, Neary, and Ozubko (2010)…

Dgroup: DG01466 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available granules (JP17); Ifenprodil tartrate tablets (JP17) ... DG00320 ... Labetalol ... D08106 ... Labetalol (INN) ... D... ... D00561 ... Sertindole (USAN/INN) ... D01674 ... Naftopidil (JP17/INN); Naftopidil tablets (JP17); Naftopidil orally disintegrating tablet

The proper name as starting point for basic reading skills

NARCIS (Netherlands)

Both-De Vries, Anna C.; Bus, Adriana G

Does alphabetic-phonetic writing start with the proper name and how does the name affect reading and writing skills? Sixty 4- to 5(1/2)-year-old children from middle SES families with Dutch as their first language wrote their proper name and named letters. For each child we created unique sets of

48 CFR 2811.104-70 - Brand-name or equal description.

Science.gov (United States)

2010-10-01

... 48 Federal Acquisition Regulations System 6 2010-10-01 2010-10-01 true Brand-name or equal... 2811.104-70 Brand-name or equal description. When a brand-name or equal description is used, the clause set forth in 2852.211-70, Brand-name or Equal, shall be inserted into the solicitation. ...

27 CFR 19.182 - Change in name of proprietor.

Science.gov (United States)

2010-04-01

... Plants Changes After Original Qualification § 19.182 Change in name of proprietor. Where there is to be a change in the individual, firm, or corporate name, the proprietor shall file application to amend the... 27 Alcohol, Tobacco Products and Firearms 1 2010-04-01 2010-04-01 false Change in name of...

48 CFR 2852.211-70 - Brand-name or equal.

Science.gov (United States)

2010-10-01

... 48 Federal Acquisition Regulations System 6 2010-10-01 2010-10-01 true Brand-name or equal. 2852... Forms SOLICITATION PROVISIONS AND CONTRACT CLAUSES Text of Provisions and Clauses 2852.211-70 Brand-name or equal. As prescribed in 2811.104-70, insert the following clause: Brand-Name or Equal (JAN 1985...

Dgroup: DG01592 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available e (INN) ... D00633 ... Dopamine hydrochloride (JP17/USP) ... DG00801 ... Bupivacaine ... D07552 ... Bupivacaine (USAN/INN) ... D01450 ... Bupivacaine... hydrochloride (USP); Bupivacaine hydrochloride hydrate (JP17) ... D00059 ... Levodopa (JP17/USP/INN) ... Cardiovascular agent ...

Three Roman Innkeepers

OpenAIRE

Tatarin, Milovan

2009-01-01

In the critical publication of Dundo Maroje which in 1930 was edited for the seventh book of the edition Stari pisci hrvatski (Old Croatian writers) by Milan Rešetar, »three Roman innkeepers« are named as dramatis personae. They appear on the stage three times: act one, scene one; act two, scene nine; act four, scene nine. The aim of this work is to establish how many inns and how many innkeepers appear in the comedy and are their lines mixed.

Dgroup: DG00177 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG00177 Chemical ... DGroup Erythropoietin ... D03231 ... Epoetin alfa (USAN/INN); Epoetin... alfa (genetical recombination) (JP17) ... D03232 ... Epoetin beta (USAN/INN); Epoetin beta (genetical recombina...tion) (JP17) ... D04032 ... Epoetin delta (USAN) D09737 ... Epoetin kappa (INN); Epoetin kappa (genetical recombination) (Epoet...in alfa biosimilar 1) (JAN) ... D09998 ... Epoetin beta pegol (genetical ...recombination) (JAN) ... D10000 ... Epoetin epsilon (INN); Epoetin epsilon (genetical recombination) (JAN) D10846 ... Epoet

Branding a business name

Directory of Open Access Journals (Sweden)

Bulatović Ivan

2016-01-01

Full Text Available The process of globalization, international businesses, as well as competitive markets imposed the companies (large ones, as well as the others to position in the required market. Making profit, which is the basic aim of every company, in such market environment can only be achieved by demonstrating distinct characteristics of a company, the characteristics which distinguish it from others with the same or similar activities. Historical and analysis of the current market have shown that being recognizable in the multitude of similar companies is a huge challenge, but also one of the main preconditions for successful operations. The moment a company is registered it acquires a specific identity primarily owing to its business name, which distinguishes it from other companies during that first period. Practically at the same time, the company starts creating its image or goodwill by means of several distinctive ways. One of them is branding business name or corporate branding. However, apart from large benefits, companies may also have big difficulties and risks in the same process as well.

Design and analysis of InN - In0.25Ga0.75N single quantum well laser for short distance communication wavelength

Science.gov (United States)

Polash, Md. Mobarak Hossain; Alam, M. Shah; Biswas, Saumya

2018-03-01

A single quantum well semiconductor laser based on wurtzite-nitride is designed and analyzed for short distance communication wavelength (at around 1300 nm). The laser structure has 12 Å well layer of InN, 15 Å barrier layer of In0.25Ga0.75N, and 54 Å separate confinement heterostructure layer of GaN. To calculate the electronic characteristics of the structure, a self-consistent method is used where Hamiltonian with effective mass approximation is solved for conduction band while six-bands Hamiltonian matrix with k · p formalism including the polarization effect, valence-band mixing effect, and strain effect is solved for valence band. The interband optical transition elements, optical gain, differential gain, radiative current density, spontaneous emission rate, and threshold characteristics have been calculated. The wave function overlap integral is found to be 45.93% for TE-polarized structure. Also, the spontaneous emission rate is found to be 6.57 × 1027 s - 1 cm - 3 eV - 1 at 1288.21 nm with the carrier density of 5 × 1019 cm - 3. Furthermore, the radiative current density and the radiative recombination rate are found to be 121.92 A cm - 2 and 6.35 × 1027 s - 1 cm - 3, respectively, while the TE-polarized optical gain of the structure is 3872.1 cm - 1 at 1301.7 nm.

Untangling the brand name from the branded entity

OpenAIRE

Round, Griff; Roper, Stuart

2015-01-01

Purpose\\ud – The purpose of this study is to investigate the value to consumers of the brand name element for established brands, given that the focus in the literature has been on new brands. To accomplish this, conceptual development was initially undertaken to illuminate the links between the brand name element and the brand entity and to provide a theoretical framework for looking at changes in value of the brand name element to consumers over time.\\ud \\ud Design/methodology/approach\\ud –...

Do people access meaning when they name banknotes?

Science.gov (United States)

Macizo, Pedro; Herrera, Amparo

2013-03-01

Do people access the monetary value of banknotes when they say them aloud? In this study, we evaluated this question by asking people to name sequences of euro banknotes blocked by category or mixed with exemplars of other categories. The participants did not show an interference effect in the blocked context. The absence of semantic interference effect was also observed when participants named euro banknotes that did not have imprinted monetary value. These results suggest a direct connection between perceiving banknotes and accessing their names.

Naming abilities: Differentiation between objects and verbs in aphasia

Directory of Open Access Journals (Sweden)

Luisa Carmen Spezzano

Full Text Available Abstract Cognitive Neuropsychology aims to understand the processing mechanisms of normal and injured brain, by means of functional architectural models of information processing. Naming is one of the most important abilities in linguistic processing. Naming of different semantic and grammatical categories differ in their lexical properties and have distinct neuroanatomical substrates. We reviewed literature data on the differences between nouns and verbs in aphasic subjects reported by scientific publications in the form of indexed articles. Studies on naming abilities tended to emphasize the differentiation between nouns and verbs both in their lexical properties and neuroanatomical substrates. Functional neuroimaging studies have improved the state of knowledge regarding category-specific naming abilities, but further studies on different types of aphasia and the use of naming abilities in different contexts are warranted.

Asteroid named after CAS scientist

Institute of Scientific and Technical Information of China (English)

无

2007-01-01

@@ An asteroid has been named after CAS astronomy historian XI Zezong with the approval of the International Minor Planet Nomenclature Committee (IMPNC), announced China's National Astronomical Observatories at CAS (NAOC) on 17 August.

A Semantic and Pragmatic Analyses of Igbo Names

African Journals Online (AJOL)

Key words: personal names, Igbo, semantic content, pragmatic content, structure. Background to the Study ... Igbo name is a story, a book or a dictionary itself. ..... the meaning (literal meaning) of some of the data structurally presented above.

27 CFR 19.922 - Change in name of proprietor.

Science.gov (United States)

2010-04-01

... Changes Affecting Applications and Permits § 19.922 Change in name of proprietor. Where there is to be a change in the individual, firm, or corporate name, the proprietor shall, within 30 days of the change... 27 Alcohol, Tobacco Products and Firearms 1 2010-04-01 2010-04-01 false Change in name of...

48 CFR 852.211-73 - Brand name or equal.

Science.gov (United States)

2010-10-01

... 48 Federal Acquisition Regulations System 5 2010-10-01 2010-10-01 false Brand name or equal. 852... Brand name or equal. As prescribed in 811.104-71, insert the following clause: Brand Name or Equal (JAN 2008) (Note: As used in this clause, the term “brand name” includes identification of products by make...

48 CFR 1852.210-70 - Brand name or equal.

Science.gov (United States)

2010-10-01

... 48 Federal Acquisition Regulations System 6 2010-10-01 2010-10-01 true Brand name or equal. 1852... 1852.210-70 Brand name or equal. As prescribed in 1810.011-70(a), insert the following provision: Brand Name or Equal (DEC 1988) (a) As used in this provision, “brand name” means identification of products...

BRAND NAMING: SOUND SYMBOLISM, BRAND PREFERENCE AND BRAND PERFORMANCE

Directory of Open Access Journals (Sweden)

Alina Catalina Duduciuc

2015-01-01

Full Text Available The aim of this study is to highlight the importance of sound symbolism for Romanian marketing and advertising applied research. Previous research showed that the phonetic structure of brand name communicates its characteristics, i.e. it drives consumers to assess certain features and performance of the product. We assumed that when consumers encounter an unknown brand name, they automatically infer characteristics from the meaning conveyed by the sounds (e.g. phonemes. Therefore, we supposed that a brand name for a shampoo (artificially created on experimental purpose containing back vowels is evaluated better by consumers when they compare it to another brand name with front vowels. Furthermore, we tested the influence of the stops and fricatives consonants in inferring certain attributes of product. To this end, fifty nine students (N=59 participated in a research based on questionnaire. The results revealed that subjects evaluated better the brand names containing back vowels than brand names with front vowel. No effect was obtained regarding the presence of stops and fricatives consonants in assessing the brand performance.

Ethnicity and Population Structure in Personal Naming Networks

Science.gov (United States)

Mateos, Pablo; Longley, Paul A.; O'Sullivan, David

2011-01-01

Personal naming practices exist in all human groups and are far from random. Rather, they continue to reflect social norms and ethno-cultural customs that have developed over generations. As a consequence, contemporary name frequency distributions retain distinct geographic, social and ethno-cultural patterning that can be exploited to understand population structure in human biology, public health and social science. Previous attempts to detect and delineate such structure in large populations have entailed extensive empirical analysis of naming conventions in different parts of the world without seeking any general or automated methods of population classification by ethno-cultural origin. Here we show how ‘naming networks’, constructed from forename-surname pairs of a large sample of the contemporary human population in 17 countries, provide a valuable representation of cultural, ethnic and linguistic population structure around the world. This innovative approach enriches and adds value to automated population classification through conventional national data sources such as telephone directories and electoral registers. The method identifies clear social and ethno-cultural clusters in such naming networks that extend far beyond the geographic areas in which particular names originated, and that are preserved even after international migration. Moreover, one of the most striking findings of this approach is that these clusters simply ‘emerge’ from the aggregation of millions of individual decisions on parental naming practices for their children, without any prior knowledge introduced by the researcher. Our probabilistic approach to community assignment, both at city level as well as at a global scale, helps to reveal the degree of isolation, integration or overlap between human populations in our rapidly globalising world. As such, this work has important implications for research in population genetics, public health, and social science adding new

Name-Based Address Mapping for Virtual Private Networks

Science.gov (United States)

Surányi, Péter; Shinjo, Yasushi; Kato, Kazuhiko

IPv4 private addresses are commonly used in local area networks (LANs). With the increasing popularity of virtual private networks (VPNs), it has become common that a user connects to multiple LANs at the same time. However, private address ranges for LANs frequently overlap. In such cases, existing systems do not allow the user to access the resources on all LANs at the same time. In this paper, we propose name-based address mapping for VPNs, a novel method that allows connecting to hosts through multiple VPNs at the same time, even when the address ranges of the VPNs overlap. In name-based address mapping, rather than using the IP addresses used on the LANs (the real addresses), we assign a unique virtual address to each remote host based on its domain name. The local host uses the virtual addresses to communicate with remote hosts. We have implemented name-based address mapping for layer 3 OpenVPN connections on Linux and measured its performance. The communication overhead of our system is less than 1.5% for throughput and less than 0.2ms for each name resolution.

Their Name is Half-Way

Directory of Open Access Journals (Sweden)

Elena Bagina

2014-01-01

Full Text Available The article is devoted to the phenomenon of the Soviet architecture of the late 1950s – 60s. The name of the article is “Their name is halfway”. It expresses the sense of all the processes occurring both in society and architecture during the Khrushchev Thaw. Developing the socalled Stalin’s Empire in the 1930-1950s, the masters of architecture had travelled only half the way. If the power had not abruptly stopped this movement, we would probably have a unique modern architecture dissimilar to the “international style”. The collapse of the Soviet Union stopped the evolution of architecture again: the unique features of the Soviet architecture of the 1960s ceased to develop. Architects were carried away with ironic games of postmodernism, which led them to deadlock.

Fluency Effects on Brand Name Recognition and Preference

DEFF Research Database (Denmark)

Erz, Antonia; Christensen, Bo

2014-01-01

Existing research has not provided a clear understanding of processing fluency effects on memory. In a laboratory experiment with novel non-words, we found a recognition advantage of fluent non-words over moderately fluent and disfluent non-words. This advantage diminished when non-words were...... presented as novel brand names in different product contexts. We further tested a preference reversal in favor of disfluency and found that disfluent brand names (non-words) were equally disliked across different products contexts. A preference reversal could be observed when fluent names were preferred...

Name-changes in post-war France: the traumatic experiences of the Shoah and its consequences on the second and third generation with reference to the example of name-changes.

Science.gov (United States)

Masson, Céline

2013-02-01

Starting from our collective initiative to work on the theme of 'The strength of the name', which has given rise both to a conference as well as a documentary called: And their name, they have changed it, I have sought to draw attention in this article to the difference between proper names, patronymic names, and the so-called Name-of-the-father. Pronouncing names involves designating the languages of names, which also refer to the accents of names, since I have proposed the idea that each name is evocative of a language, and that changing it also modifies the language of the name. I have approached the question of the name by considering cases of name-changes, essential with regard to Ashkenazi Jewish families who changed their name after the Shoah, along with the trauma that numerous Jewish families suffered after the war. French jurisprudence does not permit reversion to the original name, once it has been changed to a more French-sounding name, owing to the immutability of the name and the foreign sound of the names of origin. Copyright © 2013 Institute of Psychoanalysis.

A note on name individuation and identifying descriptions

African Journals Online (AJOL)

Kate H

used to refer to either the famous philosopher or to the shipping magnate. ..... chain that produced the use of the name is a list containing the generic name and the ... arcane issues concerning currency individuation, object to my claim that I ...

Inventing and naming America:  Place and Place Names in Vladimir Nabokov’s Lolita

Directory of Open Access Journals (Sweden)

Monica Manolescu-Oancea

2009-06-01

Full Text Available In the afterword to Lolita, Nabokov claimed that in this book he had to invent both Lolita and America after having invented Europe in his previous fiction. This paper focuses precisely on the various ways in which Nabokov “invented” America in his best-known novel. This invention is first of all the result of the author’s evolving stance on the complexity of what he called “average ‘reality’” in his works. Through a survey of Nabokov’s statements on the choice and role of place in the forewords to his Russian works and in his critical texts, I show that Lolita is indeed considered by Nabokov to be a “recreation” of American reality, to a much greater extent than his Russian works had been recreations of a given milieu. I take the metaphor of the “crazy quilt” mentioned in Lolita to suggest complexity, chromatic exuberance, hybridity. The invention of America is also the result of a process of naming. Place names will be examined, not only those which make up Quilty’s “cryptogrammic paperchase”, but also Humbert’s choice of place names. The problem of referentiality is discussed and the way recent criticism has dealt with it. Finally, the interplay between one and many is emphasized, the way in which the diversity of the “crazy quilt” is counterbalanced by the uniqueness of the mastermind having produced it. The American motto “From many make one” could be reinterpreted as “From one make many”.

Letter-case information and the identification of brand names.

Science.gov (United States)

Perea, Manuel; Jiménez, María; Talero, Fernanda; López-Cañada, Soraya

2015-02-01

A central tenet of most current models of visual-word recognition is that lexical units are activated on the basis of case-invariant abstract letter representations. Here, we examined this assumption by using a unique type of words: brand names. The rationale of the experiments is that brand names are archetypically printed either in lowercase (e.g., adidas) or uppercase (e.g., IKEA). This allows us to present the brand names in their standard or non-standard case configuration (e.g., adidas, IKEA vs. ADIDAS, ikea, respectively). We conducted two experiments with a brand-decision task ('is it a brand name?'): a single-presentation experiment and a masked priming experiment. Results in the single-presentation experiment revealed faster identification times of brand names in their standard case configuration than in their non-standard case configuration (i.e., adidas faster than ADIDAS; IKEA faster than ikea). In the masked priming experiment, we found faster identification times of brand names when they were preceded by an identity prime that matched its standard case configuration than when it did not (i.e., faster response times to adidas-adidas than to ADIDAS-adidas). Taken together, the present findings strongly suggest that letter-case information forms part of a brand name's graphemic information, thus posing some limits to current models of visual-word recognition. © 2014 The British Psychological Society.

Adaptation of Russian Christian Names into the Mari Language

Directory of Open Access Journals (Sweden)

Alexander L. Pustyakov

2017-11-01

Full Text Available This article analyses the phonetic and morphological adaptation of Christian personal names in the Mari language. The work examines personal names recorded in different regions among the Mari. The composition of the presented data is not exhaustive; it does, however, allow one to observe some general patterns of the adaptation process. The main part of the article is preceded by a brief overview of the Christianization of the Mari region and the contacts between the Mari and the Russian-speaking population; the features of the local dialects of the Russian language are briefly stated. The Mari language incorporated a significant number of Russian names. The source of loans included, besides the standard church name forms, also the numerous varieties found in the Russian dialects. As part of the study, phonetic, structural changes of Christian names in the Mari language are revealed and the reasons for the majority of these transformations are identified. The author also pays attention to the intermediary role of the neighbouring Turkic languages in the penetration of Russian names into the Mari language. Changes in borrowed names were induced by internal Mari linguistic rules, as well as dialectal features of the local Russian dialects. The identification of systematic phonetic and structural transformations helps to determine the origin of obscure anthroponyms.