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Sample records for nonmagnetic iii-v semiconductor

  1. III-V semiconductor materials and devices

    CERN Document Server

    Malik, R J

    1989-01-01

    The main emphasis of this volume is on III-V semiconductor epitaxial and bulk crystal growth techniques. Chapters are also included on material characterization and ion implantation. In order to put these growth techniques into perspective a thorough review of the physics and technology of III-V devices is presented. This is the first book of its kind to discuss the theory of the various crystal growth techniques in relation to their advantages and limitations for use in III-V semiconductor devices.

  2. III-V semiconductor devices integrated with silicon III-V semiconductor devices integrated with silicon

    Science.gov (United States)

    Hopkinson, Mark; Martin, Trevor; Smowton, Peter

    2013-09-01

    The integration of III-V semiconductor devices with silicon is one of the most topical challenges in current electronic materials research. The combination has the potential to exploit the unique optical and electronic functionality of III-V technology with the signal processing capabilities and advanced low-cost volume production techniques associated with silicon. Key industrial drivers include the use of high mobility III-V channel materials (InGaAs, InAs, InSb) to extend the performance of Si CMOS, the unification of electronics and photonics by combining photonic components (GaAs, InP) with a silicon platform for next-generation optical interconnects and the exploitation of large-area silicon substrates and high-volume Si processing capabilities to meet the challenges of low-cost production, a challenge which is particularly important for GaN-based devices in both power management and lighting applications. The diverse nature of the III-V and Si device approaches, materials technologies and the distinct differences between industrial Si and III-V processing have provided a major barrier to integration in the past. However, advances over the last decade in areas such as die transfer, wafer fusion and epitaxial growth have promoted widespread renewed interest. It is now timely to bring some of these topics together in a special issue covering a range of approaches and materials providing a snapshot of recent progress across the field. The issue opens a paper describing a strategy for the epitaxial integration of photonic devices where Kataria et al describe progress in the lateral overgrowth of InP/Si. As an alternative, Benjoucef and Reithmaier report on the potential of InAs quantum dots grown direct onto Si surfaces whilst Sandall et al describe the properties of similar InAs quantum dots as an optical modulator device. As an alternative to epitaxial integration approaches, Yokoyama et al describe a wafer bonding approach using a buried oxide concept, Corbett

  3. Active III-V Semiconductor Photonic Crystal Waveguides

    DEFF Research Database (Denmark)

    Ek, Sara; Chen, Yaohui; Schubert, Martin;

    2011-01-01

    We experimentally demonstrate enhanced amplified spontaneous emission in a quantum well III-V semiconductor photonic crystal waveguide slab. The effect is described by enhanced light matter interaction with the decrease of the group velocity. These are promising results for future compact devices...... for terabit/s communication, such as miniaturised semiconductor optical amplifiers and mode-locked lasers....

  4. III-V semiconductor solid solution single crystal growth

    Science.gov (United States)

    Gertner, E. R.

    1982-01-01

    The feasibility and desirability of space growth of bulk IR semiconductor crystals for use as substrates for epitaxial IR detector material were researched. A III-V ternary compound (GaInSb) and a II-VI binary compound were considered. Vapor epitaxy and quaternary epitaxy techniques were found to be sufficient to permit the use of ground based binary III-V crystals for all major device applications. Float zoning of CdTe was found to be a potentially successful approach to obtaining high quality substrate material, but further experiments were required.

  5. Cleavage mechanoluminescence in elemental and III-V semiconductors

    CERN Document Server

    Chandra, B P; Gour, A S; Chandra, V K; Gupta, R K

    2003-01-01

    The present paper reports the theory of mechanoluminescence (ML) produced during cleavage of elemental and III-V semiconductors. It seems that the formation of crack-induced localized states is responsible for the ML excitation produced during the cleavage of elemental and III-V semiconductors. According to this mechanism, as the atoms are drawn away from each other in an advancing crack tip, the decreasing wave function overlap across the crack may result in localized states which is associated with increasing electron energy. If the energy of these localized states approach that of the conduction band, transition to the conduction band via tunnelling would be possible, creating minority carriers, and consequently the electron-hole recombination may give rise to mechanoluminescence. When an elemental or III-V semiconductor is cleaved, initially the ML intensity increases with time, attains a peak value I sub m at the time t sub m corresponding to completion of the cleavage of the semiconductor, and then it d...

  6. Nanometre-scale electronics with III-V compound semiconductors.

    Science.gov (United States)

    del Alamo, Jesús A

    2011-11-16

    For 50 years the exponential rise in the power of electronics has been fuelled by an increase in the density of silicon complementary metal-oxide-semiconductor (CMOS) transistors and improvements to their logic performance. But silicon transistor scaling is now reaching its limits, threatening to end the microelectronics revolution. Attention is turning to a family of materials that is well placed to address this problem: group III-V compound semiconductors. The outstanding electron transport properties of these materials might be central to the development of the first nanometre-scale logic transistors.

  7. Magnetooptical investigations on ferromagnetic III-V-semiconductors; Magnetooptische Untersuchungen an ferromagnetischen III-V-Halbleitern

    Energy Technology Data Exchange (ETDEWEB)

    Winter, Andreas

    2009-07-23

    Magnetooptical Kerr effect (MOKE) and Magnetic Circular Dichroism (MCD) have been used to investigate magnetic as well as bandstructure properties of diluted magnetic III-V-semiconductors containing Mn. In these ferromagnetic systems it has been found that the strength of the observed effects depends linearly on the magnetization of the samples with no influence of the external magnetic field. The magnetooptical effects allowed the recording of hysteresis loops of GaMnAs, GaMnSb, InMnAs and InMnSb samples for different temperatures and in the case of GaMnAs also for different alignments of the external magnetic field with respect to the easy axis of magnetization. The Stoner-Wohlfahrt-Model has been used to describe the resulting shapes of the loops yielding the magnetic anisotropy parameters of the samples. For magnetically saturated samples, spectra of MOKE and MCD have been recorded. Contrary to pure III-V-semiconductors, which exhibit lots of sharp resonances due to interband transitions between Landau levels, III-Mn-V-semi-conductors how only very few (or just one) considerably broad resonance(s). Their spectral position(s) do(es) neither depend upon the magnetic field as it would be the case for pure III-V-semiconductors nor the magnetization. Only the amplitude increases linearly with the magnetization. Utilizing a kp-theory it has been possible to describe the observed dependencies. Valence- and conduction-band are split into Landau levels by the external magnetic field and, in addition to the Zeeman-effect, the spin-levels are split by the exchange interaction between the localized electrons of the Mn ions and the free carriers which is proportional to the magnetization of the samples. This splitting is much bigger than the Landau level splitting. Due to an inhomogeneous distribution of the Mn ions and due to the high carrier density the Landau levels are strongly broadened and their structure is not observable. Owing to the high carrier-concentration in

  8. III-V aresenide-nitride semiconductor materials and devices

    Science.gov (United States)

    Major, Jo S. (Inventor); Welch, David F. (Inventor); Scifres, Donald R. (Inventor)

    1997-01-01

    III-V arsenide-nitride semiconductor crystals, methods for producing such crystals and devices employing such crystals. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

  9. Subsurface dimerization in III-V semiconductor (001) surfaces

    DEFF Research Database (Denmark)

    Kumpf, C.; Marks, L.D.; Ellis, D.

    2001-01-01

    We present the atomic structure of the c(8 X 2) reconstructions of InSb-, InAs-, and GaAs-(001) surfaces as determined by surface x-ray diffraction using direct methods. Contrary to common belief, group III dimers are not prominent on the surface, instead subsurface dimerization of group m atoms ...... takes place in the second bilayer, accompanied by a major rearrangement of the surface atoms above the dimers to form linear arrays. By varying the occupancies of four surface sites the (001)-c(8 X 2) reconstructions of III-V semiconductors can be described in a unified model....

  10. Enhancing Hole Mobility in III-V Semiconductors

    Science.gov (United States)

    2012-05-21

    enhance the hole mobility and thereby improve the performance of a p-channel FET. Laikhtman et al.7 presented a modeling study of the InGaAs/ AlGaAs ...in III-V semicon- ductors, polar scattering is the dominant scattering mecha- nism as non-polar optical phonons do not interact with the electrons due...right) for upper valence band in GaAs for (a) biaxial compression and (b) uniaxial compression. TABLE I. Relevant properties of different semiconductor

  11. Antisites in III-V semiconductors: Density functional theory calculations

    KAUST Repository

    Chroneos, A.

    2014-07-14

    Density functional based simulation, corrected for finite size effects, is used to investigate systematically the formation of antisite defects in III-V semiconductors (III=Al, Ga, and In and V=P, As, and Sb). Different charge states are modelled as a function of the Fermi level and under different growth conditions. The formation energies of group III antisites (III V q) decrease with increasing covalent radius of the group V atom though not group III radius, whereas group V antisites (V I I I q) show a consistent decrease in formation energies with increase in group III and group V covalent radii. In general, III V q defects dominate under III-rich conditions and V I I I q under V-rich conditions. Comparison with equivalent vacancy formation energy simulations shows that while antisite concentrations are always dominant under stoichiometric conditions, modest variation in growth or doping conditions can lead to a significantly higher concentration of vacancies. © 2014 AIP Publishing LLC.

  12. Organic / IV, III-V Semiconductor Hybrid Solar Cells

    Directory of Open Access Journals (Sweden)

    Pang-Leen Ong

    2010-03-01

    Full Text Available We present a review of the emerging class of hybrid solar cells based on organic-semiconductor (Group IV, III-V, nanocomposites, which states separately from dye synthesized, polymer-metal oxides and organic-inorganic (Group II-VI nanocomposite photovoltaics. The structure of such hybrid cell comprises of an organic active material (p-type deposited by coating, printing or spraying technique on the surface of bulk or nanostructured semiconductor (n-type forming a heterojunction between the two materials. Organic components include various photosensitive monomers (e.g., phtalocyanines or porphyrines, conjugated polymers, and carbon nanotubes. Mechanisms of the charge separation at the interface and their transport are discussed. Also, perspectives on the future development of such hybrid cells and comparative analysis with other classes of photovoltaics of third generation are presented.

  13. Spectroscopic characterization of III-V semiconductor nanomaterials

    Science.gov (United States)

    Crankshaw, Shanna Marie

    III-V semiconductor materials form a broad basis for optoelectronic applications, including the broad basis of the telecom industry as well as smaller markets for high-mobility transistors. In a somewhat analogous manner as the traditional silicon logic industry has so heavily depended upon process manufacturing development, optoelectronics often relies instead on materials innovations. This thesis focuses particularly on III-V semiconductor nanomaterials, detailed characterization of which is invaluable for translating the exhibited behavior into useful applications. Specifically, the original research described in these thesis chapters is an investigation of semiconductors at a fundamental materials level, because the nanostructures in which they appear crystallize in quite atypical forms for the given semiconductors. Rather than restricting the experimental approaches to any one particular technique, many different types of optical spectroscopies are developed and applied where relevant to elucidate the connection between the crystalline structure and exhibited properties. In the first chapters, for example, a wurtzite crystalline form of the prototypical zincblende III-V binary semiconductor, GaAs, is explored through polarization-dependent Raman spectroscopy and temperature-dependent photoluminescence, as well as second-harmonic generation (SHG). The altered symmetry properties of the wurtzite crystalline structure are particularly evident in the Raman and SHG polarization dependences, all within a bulk material realm. A rather different but deeply elegant aspect of crystalline symmetry in GaAs is explored in a separate study on zincblende GaAs samples quantum-confined in one direction, i.e. quantum well structures, whose quantization direction corresponds to the (110) direction. The (110) orientation modifies the low-temperature electron spin relaxation mechanisms available compared to the usual (001) samples, leading to altered spin coherence times explored

  14. III - V semiconductor structures for biosensor and molecular electronics applications

    Energy Technology Data Exchange (ETDEWEB)

    Luber, S.M.

    2007-01-15

    The present work reports on the employment of III-V semiconductor structures to biosensor and molecular electronics applications. In the first part a sensor based on a surface-near two dimensional electron gas for a use in biological environment is studied. Such a two dimensional electron gas inherently forms in a molecular beam epitaxy (MBE) grown, doped aluminum gallium arsenide - gallium arsenide (AlGaAs-GaAs) heterostructure. Due to the intrinsic instability of GaAs in aqueous solutions the device is passivated by deposition of a monolayer of 4'-substituted mercaptobiphenyl molecules. The influence of these molecules which bind to the GaAs via a sulfur group is investigated by Kelvin probe measurements in air. They reveal a dependence of GaAs electron affinity on the intrinsic molecular dipole moment of the mercaptobiphenyls. Furthermore, transient surface photovoltage measurements are presented which demonstrate an additional influence of mercaptobiphenyl chemisorption on surface carrier recombination rates. As a next step, the influence of pH-value and salt concentration upon the sensor device is discussed based on the results obtained from sensor conductance measurements in physiological solutions. A dependence of the device surface potential on both parameters due to surface charging is deduced. Model calculations applying Poisson-Boltzmann theory reveal as possible surface charging mechanisms either the adsorption of OH- ions on the surface, or the dissociation of OH groups in surface oxides. A comparison between simulation settings and physical device properties indicate the OH- adsorption as the most probable mechanism. In the second part of the present study the suitability of MBE grown III-V semiconductor structures for molecular electronics applications is examined. In doing so, a method to fabricate nanometer separated, coplanar, metallic electrodes based on the cleavage of a supporting AlGaAs-GaAs heterostructure is presented. This is followed

  15. Carbon doping of III-V compound semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Moll, Amy Jo [Univ. of California, Berkeley, CA (United States)

    1994-09-01

    Focus of the study is C acceptor doping of GaAs, since C diffusion coefficient is at least one order of magnitude lower than that of other common p-type dopants in GaAs. C ion implantation results in a concentration of free holes in the valence band < 10% of that of the implanted C atoms for doses > 1014/cm2. Rutherford backscattering, electrical measurements, Raman spectroscopy, and Fourier transform infrared spectroscopy were amonth the techniques used. Ga co-implantation increased the C activation in two steps: first, the additional radiation damage creates vacant As sites that the implanted C can occupy, and second, it maintains the stoichiometry of the implanted layer, reducing the number of compensating native defects. In InP, the behavior of C was different from that in GaAs. C acts as n-type dopant in the In site; however, its incorporation by implantation was difficult to control; experiments using P co-implants were inconsistent. The lattice position of inactive C in GaAs in implanted and epitaxial layers is discussed; evidence for formation of C precipitates in GaAs and InP was found. Correlation of the results with literature on C doping in III-V semiconductors led to a phenomenological description of C in III-V compounds (particularly GaAs): The behavior of C is controlled by the chemical nature of C and the instrinsic Fermi level stabilization energy of the material.

  16. Antisites in III-V semiconductors: Density functional theory calculations

    Energy Technology Data Exchange (ETDEWEB)

    Chroneos, A., E-mail: alex.chroneos@open.ac.uk [Engineering and Innovation, The Open University, Milton Keynes MK7 6AA (United Kingdom); Tahini, H. A. [Department of Materials, Imperial College London, London SW7 2AZ (United Kingdom); PSE Division, KAUST, Thuwal 23955-6900 (Saudi Arabia); Schwingenschlögl, U., E-mail: udo.schwingenschlogl@kaust.edu.sa [PSE Division, KAUST, Thuwal 23955-6900 (Saudi Arabia); Grimes, R. W., E-mail: r.grimes@imperial.ac.uk [Department of Materials, Imperial College London, London SW7 2AZ (United Kingdom)

    2014-07-14

    Density functional based simulation, corrected for finite size effects, is used to investigate systematically the formation of antisite defects in III-V semiconductors (III = Al, Ga, and In and V = P, As, and Sb). Different charge states are modelled as a function of the Fermi level and under different growth conditions. The formation energies of group III antisites (III{sub V}{sup q}) decrease with increasing covalent radius of the group V atom though not group III radius, whereas group V antisites (V{sub III}{sup q}) show a consistent decrease in formation energies with increase in group III and group V covalent radii. In general, III{sub V}{sup q} defects dominate under III-rich conditions and V{sub III}{sup q} under V-rich conditions. Comparison with equivalent vacancy formation energy simulations shows that while antisite concentrations are always dominant under stoichiometric conditions, modest variation in growth or doping conditions can lead to a significantly higher concentration of vacancies.

  17. Methods for enhancing P-type doping in III-V semiconductor films

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Feng; Stringfellow, Gerald; Zhu, Junyi

    2017-08-01

    Methods of doping a semiconductor film are provided. The methods comprise epitaxially growing the III-V semiconductor film in the presence of a dopant, a surfactant capable of acting as an electron reservoir, and hydrogen, under conditions that promote the formation of a III-V semiconductor film doped with the p-type dopant. In some embodiments of the methods, the epitaxial growth of the doped III-V semiconductor film is initiated at a first hydrogen partial pressure which is increased to a second hydrogen partial pressure during the epitaxial growth process.

  18. Electrically-Generated Spin Polarization in Non-Magnetic Semiconductors

    Science.gov (United States)

    2016-03-31

    AFRL-AFOSR-VA-TR-2016-0143 Electrically -generated spin polarization in non-magnetic semiconductors Vanessa Sih UNIVERSITY OF MICHIGAN Final Report 03...SUBTITLE (YIP) - Electrically -generated spin polarization in non-magnetic semiconductors 5a. CONTRACT NUMBER 5b. GRANT NUMBER FA9550-12-1-0258 5c...that produced electrically -generated electron spin polarization in non-magnetic semiconductor heterostructures. Electrically -generated electron spin

  19. Investigation of III-V semiconductor heterostructures for post-Si-CMOS applications

    Science.gov (United States)

    Bhatnagar, Kunal

    Silicon complementary metal-oxide-semiconductor (CMOS) technology in the past few decades has been driven by aggressive device scaling to increase performance, reduce cost and lower power consumption. However, as devices are scaled below the 100 nm region, performance gain has become increasingly difficult to obtain by traditional scaling. As we move towards advanced technology nodes, materials innovation and physical architecture are becoming the primary enabler for performance enhancement in CMOS technology rather than scaling. One class of materials that can potentially result in improved electrical performance are III-V semiconductors, which are ideal candidates for replacing the channel in Si CMOS owing to their high electron mobilities and capabilities for band-engineering. This work is aimed towards the growth and characterization of III-V semiconductor heterostructures and their application in post-Si-CMOS devices. The two main components of this study include the integration of III-V compound semiconductors on silicon for tunnel-junction Esaki diodes, and the investigation of carrier transport properties in low-power III-V n-channel FETs under uniaxial strain for advanced III-V CMOS solutions. The integration of III-V compound semiconductors with Si can combine the cost advantage and maturity of the Si technology with the superior performance of III-V materials. We have demonstrated high quality epitaxial growth of GaAs and GaSb on Si (001) wafers through the use of various buffer layers including AlSb and crystalline SrTiO3. These GaSb/Si virtual substrates were used for the fabrication and characterization of InAs/GaSb broken-gap Esaki-tunnel diodes as a possible solution for heterojunction Tunnel-FETs. In addition, the carrier transport properties of InAs channels were evaluated under uniaxial strain for the potential use of strain solutions in III-V CMOS.

  20. Controlling the emission wavelength in group III-V semiconductor laser diodes

    KAUST Repository

    Ooi, Boon S.

    2016-12-29

    Methods are provided for modifying the emission wavelength of a semiconductor quantum well laser diode, e.g. by blue shifting the emission wavelength. The methods can be applied to a variety of semiconductor quantum well laser diodes, e.g. group III-V semiconductor quantum wells. The group III-V semiconductor can include AlSb, AlAs, Aln, AlP, BN, GaSb, GaAs, GaN, GaP, InSb, InAs, InN, and InP, and group III-V ternary semiconductors alloys such as AlxGai.xAs. The methods can results in a blue shifting of about 20 meV to 350 meV, which can be used for example to make group III-V semiconductor quantum well laser diodes with an emission that is orange or yellow. Methods of making semiconductor quantum well laser diodes and semiconductor quantum well laser diodes made therefrom are also provided.

  1. III-V nitride semiconductors for solar hydrogen production

    Science.gov (United States)

    Parameshwaran, Vijay; Gallinat, Chad; Enck, Ryan W.; Sampath, Anand V.; Shen, Paul H.; Kuykendall, Tevye; Aloni, Shaul; Wraback, Michael; Clemens, Bruce M.

    2012-06-01

    Photoelectrochemical cells are devices that can convert solar radiation to hydrogen gas through a water decomposition process. In this process, energy is converted from incident photons to the bonds of the generated H2 molecules. The solar radiation absorption, electron-hole pair splitting, and photoelectrolysis half reactions all occur in the vicinity of the electrode-electrolyte interface. As a result, engineering the electrode material and its interaction with the electrolyte is important in investigating and improving the energy conversion process in these devices. III-V nitride materials are promising candidates for photoelectrochemical energy applications. We demonstrate solar-to-hydrogen conversion in these cells using p-type GaN and n-type InGaN as a photocathode and photoanode material, respectively. Additionally, we demonstrate heteroepitaxial MOCVD growth of GaP on Si, enabling future work in developing GaPN as a photocathode material.

  2. Theoretical models of ferromagnetic III-V semiconductors

    OpenAIRE

    Jungwirth, T.; Sinova, Jairo; Kučera, J.; MacDonald, A. H.

    2002-01-01

    Recent materials research has advanced the maximum ferromagnetic transition temperature in semiconductors containing magnetic elements toward room temperature. Reaching this goal would make information technology applications of these materials likely. In this article we briefly review the status of work over the past five years which has attempted to achieve a theoretical understanding of these complex magnetic systems. The basic microscopic origins of ferromagnetism in the (III,Mn)V compoun...

  3. Growth and Defect Characterization of Quantum Dot-Embedded III-V Semiconductors for Advanced Space Photovoltaics

    Science.gov (United States)

    2014-05-15

    intermediate band, quantum dots, metamorphic III-V semiconductors, virtual substrates, defect spectroscopy, molecular beam epitaxy 16. SECURITY...AFRL-RV-PS- AFRL-RV-PS- TR-2014-0059 TR-2014-0059 GROWTH AND DEFECT CHARACTERIZATION OF QUANTUM DOT-EMBEDDED III-V SEMICONDUCTORS FOR ADVANCED...COVERED (From - To) 2 4 May 2012 – 06 Mar 2014 4. TITLE AND SUBTITLE Growth and Defect Characterization of Quantum Dot-Embedded III-V Semiconductors

  4. The coupling of thermochemistry and phase diagrams for group III-V semiconductor systems. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Anderson, T.J.

    1998-07-21

    The project was directed at linking the thermochemical properties of III-V compound semiconductors systems with the reported phase diagrams. The solid-liquid phase equilibrium problem was formulated and three approaches to calculating the reduced standard state chemical potential were identified and values were calculated. In addition, thermochemical values for critical properties were measured using solid state electrochemical techniques. These values, along with the standard state chemical potentials and other available thermochemical and phase diagram data, were combined with a critical assessment of selected III-V systems. This work was culminated with a comprehensive assessment of all the III-V binary systems. A novel aspect of the experimental part of this project was the demonstration of the use of a liquid encapsulate to measure component activities by a solid state emf technique in liquid III-V systems that exhibit high vapor pressures at the measurement temperature.

  5. Characterization of Hydrogen Complex Formation in III-V Semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Williams, Michael D

    2006-09-28

    Atomic hydrogen has been found to react with some impurity species in semiconductors. Hydrogenation is a methodology for the introduction of atomic hydrogen into the semiconductor for the express purpose of forming complexes within the material. Efforts to develop hydrogenation as an isolation technique for AlGaAs and Si based devices failed to demonstrate its commercial viability. This was due in large measure to the low activation energies of the formed complexes. Recent studies of dopant passivation in long wavelength (0.98 - 1.55m) materials suggested that for the appropriate choice of dopants much higher activation energies can be obtained. This effort studied the formation of these complexes in InP, This material is extensively used in optoelectronics, i.e., lasers, modulators and detectors. The experimental techniques were general to the extent that the results can be applied to other areas such as sensor technology, photovoltaics and to other material systems. The activation energies for the complexes have been determined and are reported in the scientific literature. The hydrogenation process has been shown by us to have a profound effect on the electronic structure of the materials and was thoroughly investigated. The information obtained will be useful in assessing the long term reliability of device structures fabricated using this phenomenon and in determining new device functionalities.

  6. Surface chemistry and physics of III/V compound semiconductors

    Science.gov (United States)

    Fu, Qiang

    The surface chemistry of gallium arsenide and indium phosphide has been investigated using infrared spectroscopy (IR), scanning tunneling microscopy (STM), and ab initio molecular cluster calculations. The work presented here provides the first theoretical framework for studying the reaction sites on compound semiconductor surfaces. These sites consist of dimers and threefold-coordinated atoms in the second layer. Stable clusters of gallium arsenide, i.e., GaxAsyHz, where x, y = 4, 5 and z = 11, 13, are those in which the arsenic dangling bonds are filled, while the gallium dangling bonds are empty. By contrast, stable clusters of indium phosphide, i.e., InxPyHz, where x, y = 4, 5 and z = 10, 11, 13, are those in which the phosphorous dangling bonds are either filled or half filled, and the indium dangling bonds are empty. The most important contribution of this work is the discovery of a new surface structure, the InP (001)-(2 x 1). The InP (2 x 1) is terminated with a complete layer of phosphorous dimers with a half-filled dangling bond on every other phosphorous atom. The half-filled orbital violate the electron counting model [Pashley, Phys. Rev. B 1989, 40, 10481], and indicate that many more reconstructions are possible on these surfaces than was originally thought. Excellent agreement is achieved between the molecular cluster calculations and the measured vibrational frequencies of adsorbed hydrogen and arsine on gallium arsenide and indium phosphide (001) surfaces. On both GaAs and InP, mono-hydrogen and di-hydrogen bonds are formed with the three-coordinate, group V atoms and dimers. Conversely, electron deficient bridging hydrides are produced on the group III dimers. These latter species occur in isolated or coupled structures involving two or three metal atoms. In addition, we have elucidated the kinetics and mechanism of arsine decomposition on gallium-rich GaAs (001). The combination of STM, IR, and ab initio molecular cluster calculations provides a

  7. Diffusion in Intrinsic and Highly Doped III-V Semiconductors

    CERN Multimedia

    Stolwijk, N

    2002-01-01

    %title\\\\ \\\\Diffusion plays a key role in the fabrication of semiconductor devices. The diffusion of atoms in crystals is mediated by intrinsic point defects. Investigations of the diffusion behaviour of self- and solute atoms on the Ga sublattice of gallium arsenide led to the conclusion that in intrinsic and n-type material charged Ga vacancies are involved in diffusion processes whereas in p-type material diffusion if governed by charged Ga self-interstitials. Concerning the As sublattice of gallium arsenide there is a severe lack of reliable diffusion data. The few available literature data on intrinsic GaAs are not mutually consistent. A systematic study of the doping dependence of diffusion is completely missing. The most basic diffusion process - self-diffusion of As and its temperature and doping dependence - is practically not known. For GaP a similar statement holds.\\\\ \\\\The aim of the present project is to perform a systematic diffusion study of As diffusion in intrinsic and doped GaAs and in GaP. P...

  8. Location of lanthanide impurity levels in the III-V semiconductor GaN

    NARCIS (Netherlands)

    Dorenbos, P.; Van der Kolk, E.

    2006-01-01

    Knowledge from lanthanide spectroscopy on wide band gap (6–10 eV) inorganic compounds is used to understand and predict optical and electronic properties of the lanthanides in the III-V semiconductor GaN. For the first time the location of the 4fn ground state energy of each divalent and trivalent l

  9. DLTS characterisation of defects in III-V compound semiconductors grown by MBE

    OpenAIRE

    2011-01-01

    The interest in the growth of III-V compound semiconductors such as GaAs and AlGaAs on high index planes has increased tremendously over the last few years. The structural, optical and electrical properties III-V based structures are found to improve by, growing on (nil) planes. For example the amphoteric nature of silicon (Si) facilitates the Molecular Beam Epitaxy (MBE) growth of p-type GaAs/AlGaAs heterostructures on (311)A that have higher hole mobilities than those based on the conventio...

  10. Crystal-field spectra of 3d super n impurities in II-VI and III-V compound semiconductors.

    Science.gov (United States)

    Allen, J. W.; Baranowski, J. M.; Pearson, G. L.

    1967-01-01

    Impurity crystal-field spectra in II-VI and III- V compound semiconductors used to predict unexplored systems spectra impurity crystal-field spectra in II-VI and III-V compound semiconductors used to predict unexplored systems spectra

  11. Methods for forming group III-V arsenide-nitride semiconductor materials

    Science.gov (United States)

    Major, Jo S. (Inventor); Welch, David F. (Inventor); Scifres, Donald R. (Inventor)

    2000-01-01

    Methods are disclosed for forming Group III--arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

  12. Generic technique to grow III-V semiconductor nanowires in a closed glass vessel

    Directory of Open Access Journals (Sweden)

    Kan Li

    2016-06-01

    Full Text Available Crystalline III-V semiconductor nanowires have great potential in fabrication of nanodevices for applications in nanoelectronics and optoelectronics, and for studies of novel physical phenomena. Sophisticated epitaxy techniques with precisely controlled growth conditions are often used to prepare high quality III-V nanowires. The growth process and cost of these experiments are therefore dedicated and very high. Here, we report a simple but generic method to synthesize III-V nanowires with high crystal quality. The technique employs a closed evacuated tube vessel with a small tube carrier containing a solid source of materials and another small tube carrier containing a growth substrate inside. The growth of nanowires is achieved after heating the closed vessel in a furnace to a preset high temperature and then cooling it down naturally to room temperature. The technique has been employed to grow InAs, GaAs, and GaSb nanowires on Si/SiO2 substrates. The as-grown nanowires are analyzed by SEM, TEM and Raman spectroscopy and the results show that the nanowires are high quality zincblende single crystals. No particular condition needs to be adjusted and controlled in the experiments. This technique provides a convenient way of synthesis of III-V semiconductor nanowires with high material quality for a wide range of applications.

  13. X-point deformation potentials of III-V semiconductors in a tight-binding approach

    Science.gov (United States)

    Muñoz, M. C.; Armelles, G.

    1993-07-01

    The hydrostatic E1 and shear E2 deformation potentials of the III-V semiconductor compounds are calculated within a nearest-neighbor tight-binding approach. In the sp3s* parametrization, analytical expressions for both E1 and E2 are derived. The scaling law of the s*p interaction is modified in such a way that it provides deformation potentials at X in reasonable agreement with available experimental data. This phenomenological term takes into account the physical behavior of the actual excited states under strain and consequently, it allows us to describe accurately the dependence of the band-edge states under (001) biaxial strain.

  14. Phase transitions in Group III-V and II-VI semiconductors at high pressure

    Science.gov (United States)

    Yu, S. C.; Liu, C. Y.; Spain, I. L.; Skelton, E. F.

    1979-01-01

    The structures and transition pressures of Group III-V and II-VI semiconductors and of a pseudobinary system (Ga/x/In/1-x/Sb) have been investigated. Results indicate that GaP, InSb, GaSb, GaAs and possible AlP assume Metallic structures at high pressures; a tetragonal, beta-Sn-like structure is adopted by only InSb and GaSb. The rocksalt phase is preferred in InP, InAs, AlSb, ZnO and ZnS. The model of Van Vechten (1973) gives transition pressures which are in good agreement with measured values, but must be refined to account for the occurrence of the ionic rocksalt structure in some compounds. In addition, discrepancies between the theoretical scaling values for volume changes at the semiconductor-to-metal transitions are observed.

  15. Engineering the cell-semiconductor interface: a materials modification approach using II-VI and III-V semiconductor materials.

    Science.gov (United States)

    Bain, Lauren E; Ivanisevic, Albena

    2015-02-18

    Developing functional biomedical devices based on semiconductor materials requires an understanding of interactions taking place at the material-biosystem interface. Cell behavior is dependent on the local physicochemical environment. While standard routes of material preparation involve chemical functionalization of the active surface, this review emphasizes both biocompatibility of unmodified surfaces as well as use of topographic features in manipulating cell-material interactions. Initially, the review discusses experiments involving unmodified II-VI and III-V semiconductors - a starting point for assessing cytotoxicity and biocompatibility - followed by specific surface modification, including the generation of submicron roughness or the potential effect of quantum dot structures. Finally, the discussion turns to more recent work in coupling topography and specific chemistry, enhancing the tunability of the cell-semiconductor interface. With this broadened materials approach, researchers' ability to tune the interactions between semiconductors and biological environments continues to improve, reaching new heights in device function.

  16. Implications of the Differential Toxicological Effects of III-V Ionic and Particulate Materials for Hazard Assessment of Semiconductor Slurries.

    Science.gov (United States)

    Jiang, Wen; Lin, Sijie; Chang, Chong Hyun; Ji, Zhaoxia; Sun, Bingbing; Wang, Xiang; Li, Ruibin; Pon, Nanetta; Xia, Tian; Nel, André E

    2015-12-22

    Because of tunable band gaps, high carrier mobility, and low-energy consumption rates, III-V materials are attractive for use in semiconductor wafers. However, these wafers require chemical mechanical planarization (CMP) for polishing, which leads to the generation of large quantities of hazardous waste including particulate and ionic III-V debris. Although the toxic effects of micron-sized III-V materials have been studied in vivo, no comprehensive assessment has been undertaken to elucidate the hazardous effects of submicron particulates and released III-V ionic components. Since III-V materials may contribute disproportionately to the hazard of CMP slurries, we obtained GaP, InP, GaAs, and InAs as micron- (0.2-3 μm) and nanoscale (materials that could appear in slurries. This finding is of importance for considering how to deal with the hazard potential of CMP slurries.

  17. III-V Metal-Oxide-Semiconductor Field-Effect Transistors with High κ Dielectrics

    Science.gov (United States)

    Hong, Minghwei; Kwo, J. Raynien; Tsai, Pei-chun; Chang, Yaochung; Huang, Mao-Lin; Chen, Chih-ping; Lin, Tsung-da

    2007-05-01

    Research efforts on achieving low interfacial density of states (Dit) as well as low electrical leakage currents on GaAs-based III-V compound semiconductors are reviewed. Emphasis is placed on ultra high vacuum (UHV) deposited Ga2O3(Gd2O3) and atomic layer deposition (ALD)-Al2O3 on GaAs and InGaAs. Ga2O3(Gd2O3), the novel oxide, which was electron-beam evaporated from a gallium-gadolinium-garnet target, has, for the first time, unpinned the Fermi level of the oxide/GaAs heterostructures. Interfacial chemical properties and band parameters of valence band offsets and conduction band offsets in the oxides/III-V heterostructures are studied and determined using X-ray photoelectron spectroscopy and electrical leakage transport measurements. The mechanism of III-V surface passivation is discussed. The mechanism of Fermi-level unpinning in ALD-Al2O3 ex-situ deposited on InGaAs were studied and unveiled. Systematic heat treatments under various gases and temperatures were studied to achieve low leakage currents of 10-8-10-9 A/cm2 and low Dit’s in the range of (4--9)× 1010 cm-2 eV-1 for Ga2O3(Gd2O3) on InGaAs. By removing moisture from the oxide, thermodynamic stability of the Ga2O3(Gd2O3)/GaAs heterostructures was achieved with high temperature annealing, which is needed for fabricating inversion-channel metal-oxide-semiconductor filed-effect transistors (MOSFET’s). The oxide remains amorphous and the interface remains intact with atomic smoothness and sharpness. Device performances of inversion-channel and depletion-mode III-V MOSFET’s are reviewed, again with emphasis on the devices using Ga2O3(Gd2O3) as the gate dielectric.

  18. High resolution electron energy loss spectroscopy of narrow gap III-V semiconductor surfaces and interfaces

    CERN Document Server

    Veal, T D

    2002-01-01

    The electronic properties of n-type narrow gap III-V semiconductor surfaces and interfaces are investigated using high-resolution electron-energy-loss spectroscopy (HREELS). Changing the incident electron energy, alters the wave-vector transfer parallel to the surface, allowing the probing depth to be varied over typical space-charge layer widths (100 - 2000 A). Semi-classical dielectric theory simulations of the HREEL spectra are performed to extract quantitative information from the probing energy-dependence of the surface plasmon and phonon peaks. The plasma frequency used in the simulations is related to the electron concentration and effective mass using the Kane model of the non-parabolic conduction band. Space-charge layer parameters are obtained by comparing calculated smooth charge profiles with the histogram profiles that are used in the simulations. Complementary experimental techniques are employed to correlate the reconstruction, chemical composition and morphology of the surface with the electro...

  19. Spin Manipulation through geometric phase in III-V semiconductor quantum dots

    Science.gov (United States)

    Prbahakar, Sanjay; Melnik, Roderick

    2015-03-01

    A more robust technique is proposed to flip the spin completely through geometric phase in III-V semiconductor quantum dots (QDs). We transport the QDs adiabatically in a closed loop along the circular trajectory in the plane of two dimensional electron gas with the application of time dependent gate controlled electric fields and investigate the manipulation of Berry phase with the spin-orbit couplings. Here we show that both the Rashba and the Dresselhaus couplings are present for inducing a phase necessary for spin flip. If one of them is absent, the induced phase is trivial and irrelevant for spin-flip (Phys. Rev. B 89, 245310 (2014), Applied Physics Letters 104, 142411 (2014)). We acknowledge the funding agency: Natural Sciences and Engineering Research Council of Canada and Canada Research Chair Program.

  20. A model of axial heterostructure formation in III-V semiconductor nanowires

    Science.gov (United States)

    Dubrovskii, V. G.

    2016-03-01

    A kinetic model of the formation of axial heterostructures in nanocrystalline wires (nanowires, NWs) of III-V semiconductor compounds growing according to the vapor-liquid-solid (VLS) mechanism is proposed. A general system of nonstationary equations for effective fluxes of two elements of the same group (e.g., group III) is formulated that allows the composition profile of a heterostructure to be calculated as a function of the coordinate and epitaxial growth conditions, including the flux of a group V element. Characteristic times of the composition relaxation, which determine the sharpness of the heteroboundary (heterointerface), are determined in the linear approximation. A temporal interruption (arrest) of fluxes during the switching of elements for a period exceeding these relaxation times must increase sharpness of the heteroboundary. Model calculations of the composition profile in a double GaAs/InAs/GaAs axial heterostructure have been performed for various NW radii.

  1. Low-noise III-V metasurface based semiconductor vortex laser and rotational Doppler velocimetry

    Science.gov (United States)

    Seghilani, Mohamed; Chomet, Baptiste; Myara, Mikhael; Sellahi, Mohamed; Legratiet, Luc; Beaudoin, Gregoire; Sagnes, Isabelle; Lalanne, Philippe; Garnache, Arnaud

    2017-03-01

    We demonstrate a surface-emitting laser, based on III-V semiconductor technology with an integrated metasurface, generating vortex-like coherent state in the Laguerre-Gauss basis.24 We use a first order phase perturbation to introduce a weak orbital anisotropy, based on a dielectric metasurface and non-linear laser dynamics, allowing selecting vortex handedness. Moreover, similarly to linear Doppler Shift, light carrying orbital angular momentum L, scattered by a rotating object at angular velocity, experiences a rotational Doppler shift L. We show that this fundamental light matter interaction can be detected exploiting self-mixing in a vortex laser under Doppler-shifted optical feedback, with quantum noise-limited light detection.25 This will allow us to combine a velocity sensor with optical tweezers for micro-manipulation applications, with high performances, simplicity and compactness. Such high performance laser opens the path to widespread new photonic applications.

  2. Surfaces of III-V semiconductors studied by scanning tunneling microscopy and scanning luminescence

    Science.gov (United States)

    Chizhov, Ilya Yu

    The investigation of semiconductor surfaces on an atomic scale is of key importance for research areas such as the growth of thin films and low-dimensional objects by epitaxial techniques. Surfaces of III-V semiconductors, especially GaAs(001) surface, hold a central position in semiconductor surface science due to their extremely wide use in the growth of heterostructure-based electronic and optoelectronic devices. This work describes the results of experimental studies of (001) surfaces of two III-V semiconductors, GaAs and InAs, using scanning tunneling microscopy (STM) and scanning tunneling luminescence (STL). For STL studies an optical detection system consisting of an optical spectrometer (replacable by a photomultiplier tube), electronics, an IBM PC computer and acquisition software has been added to an existing STM (Omicron). The system is capable of recording luminescence images of surfaces and the acquisition of optical spectra of STM-induced luminescence. Application of STL to GaAs(001) surfaces has revealed that atomic-scale features, such as steps, domain boundaries etc., do not give any contrast in luminescence images, while larger objects, such as arsenic islands, do produce a pronounced contrast. The work in STL has helped to identify several key problems that have to be solved in order to make STL a valuable analytical technique. The STM studies of reconstructions on the GaAs(001) surface, which has a fairly complicated phase diagram, have concentrated on two major phase transitions, from As-rich c(4× 4) to As-rich (2× 4) phase and from As-rich (2× 4) to Ga-rich (4× 2) phase. The first transition has been found to proceed through an intermediate (4× 3)/c(4× 6) phase which has been previously identified as having (2× 3) symmetry. The second transition has been found to involve the formation of (3× 6) and (4× 6) multi-domain phases. The local structure and composition of these phases have been analyzed in detail and a comprehensive dynamic

  3. Electroless Deposition of III-V Semiconductor Nanostructures from Ionic Liquids at Room Temperature.

    Science.gov (United States)

    Lahiri, Abhishek; Borisenko, Natalia; Olschewski, Mark; Gustus, René; Zahlbach, Janine; Endres, Frank

    2015-09-28

    Group III-V semiconductor nanostructures are important materials in optoelectronic devices and are being researched in energy-related fields. A simple approach for the synthesis of these semiconductors with well-defined nanostructures is desired. Electroless deposition (galvanic displacement) is a fast and versatile technique for deposition of one material on another and depends on the redox potentials of the two materials. Herein we show that GaSb can be directly synthesized at room temperature by galvanic displacement of SbCl3 /ionic liquid on electrodeposited Ga, on Ga nanowires, and also on commercial Ga. In situ AFM revealed the galvanic displacement process of Sb on Ga and showed that the displacement process continues even after the formation of GaSb. The bandgap of the deposited GaSb was 0.9±0.1 eV compared to its usual bandgap of 0.7 eV. By changing the cation in the ionic liquid, the redox process could be varied leading to GaSb with different optical properties.

  4. Localization of Electronic States in III-V Semiconductor Alloys: A Comparative Study

    Science.gov (United States)

    Pashartis, C.; Rubel, O.

    2017-06-01

    Electronic properties of III-V semiconductor alloys are examined using first principles, with the focus on the spatial localization of electronic states. We compare localization at the band edges due to various isovalent impurities in a host GaAs, including its impact on the photoluminescence linewidths and carrier mobilities. The extremity of localization at the band edges is correlated with the ability of individual elements to change the band gap and the relative band alignment. Additionally, the formation energies of substitutional defects are calculated and linked to challenges associated with the growth and formability of alloys. A spectrally resolved inverse participation ratio is used to map localization in prospective GaAs-based materials alloyed with B, N, In, Sb, and Bi for 1.55 -μ m -wavelength telecommunication lasers. This analysis is complemented by a band unfolding of the electronic structure and a discussion of the implications of localization on the optical gain and Auger losses. Correspondence with experimental data on the broadening of the photoluminescence spectrum and charge-carrier mobilities show that the localization characteristics can serve as a guideline for the engineering of semiconductor alloys.

  5. Superconductivity in Group III-V Semiconductor AlN Under High Pressure

    Directory of Open Access Journals (Sweden)

    G. Selva Dancy

    2015-09-01

    Full Text Available The electronic properties of cubic zinc blende type group III-V semiconductor AlN under pressure is studied using full potential linear muffin-tin orbital (FP-LMTO method. At normal pressure, AlN is an indirect bandgap semiconductor with band gap value 4.56 eV. When the pressure is increased, there is enhanced overlapping between the wave functions of the neighboring atoms. As a result the widths of the valence and empty conduction bands increase. These changes lead to the narrowing and indirect closing of the band gaps in AlN (metallization. On further increase of pressure, AlN becomes a superconductor and AlN comes under the class of electron-phonon-mediated high pressure superconductors. The superconducting transition temperatures (Tc of AlN are obtained as a function of pressure for the CsCl structure. It is also confirmed that the metallization, structural phase transition and onset of superconductivity do not occur simultaneously in this compound. DOI: http://dx.doi.org/10.17807/orbital.v7i3.628

  6. III-V semiconductor nano-resonators-a new strategy for passive, active, and nonlinear all-dielectric metamaterials

    CERN Document Server

    Liu, Sheng; Reno, John L; Sinclair, Michael B; Brener, Igal

    2016-01-01

    Metamaterials comprising assemblies of dielectric resonators have attracted much attention due to their low intrinsic loss and isotropic optical response. In particular, metasurfaces made from silicon dielectric resonators have shown desirable behaviors such as efficient nonlinear optical conversion, spectral filtering and advanced wave-front engineering. To further explore the potential of dielectric metamaterials, we present all-dielectric metamaterials fabricated from epitaxially grown III-V semiconductors that can exploit the high second-order optical susceptibilities of III-V semiconductors, as well as the ease of monolithically integrating active/gain media. Specifically, we create GaAs nano-resonators using a selective wet oxidation process that forms a low refractive index AlGaO (n~1.6) under layer similar to silicon dielectric resonators formed using silicon-on-insulator wafers. We further use the same fabrication processes to demonstrate multilayer III-V dielectric resonator arrays that provide us w...

  7. Structure and self-assembly of alkanethiols on III-V semiconductor (1 1 0) surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Zerulla, D. [UCD Dublin, School of Physics, Science Centre North, Dublin 4 (Ireland)], E-mail: dominic.zerulla@ucd.ie; Chasse, T. [Universitaet Tuebingen, Institut fuer Physikalische und Theoretische Chemie, Auf der Morgenstelle 8, 72076 Tuebingen (Germany)

    2009-05-15

    We report on the self-assembly, binding, and structural properties of alkanethiol monolayers on III-V semiconductor (1 1 0) surfaces. In particular, the focus will be on medium size n-alkanethiols adsorbed on InP(1 1 0) and GaP(1 1 0) using soft X-ray photoelectron spectroscopy (SXPS), X-ray absorption near-edge structure (XANES) spectroscopy, scanning tunneling microscopy (STM) and electrochemical methods to reveal the binding and the inner structure of the systems. The results show that the sulfur from the thiol groups binds directly, under cleavage of its hydrogen atoms, to the indium atoms of the substrate while the hydrogen is bound to the phosphorous of the substrate. The angular (azimuthal and polar) resolved measurements reveal a substrate-dependent tilt of 34 deg. from normal for InP and 15 deg. for GaP. A unique feature observed on these systems is the complete alignment of the alkyl chains with respect to the azimuthal orientation. Further structural data confirm that this adsorbate system represents the case of a huge, single domain organic monolayer. We interprete this behaviour, which deviates strongly from the well known thiol films on gold, silver or copper, in terms of structural constraints and dangling-bond induced preorientation of the alkanethiol chains.

  8. Novel planarization and passivation in the integration of III-V semiconductor devices

    Science.gov (United States)

    Zheng, Jun-Fei; Hanberg, Peter J.; Demir, Hilmi V.; Sabnis, Vijit A.; Fidaner, Onur; Harris, James S., Jr.; Miller, David A. B.

    2004-06-01

    III-V semiconductor devices typically use structures grown layer-by-layer and require passivation of sidewalls by vertical etching to reduce leakage current. The passivation is conventionally achieved by sealing the sidewalls using polymer and the polymer needs to be planarized by polymer etch-back method to device top for metal interconnection. It is very challenging to achieve perfect planarization needed for sidewalls of all the device layers including the top layer to be completely sealed. We introduce a novel hard-mask-assisted self-aligned planarization process that allows the polymer in 1-3 μm vicinity of the devices to be planarized perfectly to the top of devices. The hard-mask-assisted process also allows self-aligned via formation for metal interconnection to device top of μm size. The hard mask is removed to expose a very clean device top surface for depositing metals for low ohmic contact resistance metal interconnection. The process is robust because it is insensitive to device height difference, spin-on polymer thickness variation, and polymer etch non-uniformity. We have demonstrated high yield fabrication of monolithically integrated optical switch arrays with mesa diodes and waveguide electroabsorption modulators on InP substrate with yield > 90%, high breakdown voltage of > 15 Volts, and low ohmic contact resistance of 10-20 Ω.

  9. Interface formation between hydrocarbon ring molecules and III-V semiconductor surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Passmann, Regina

    2008-08-15

    In this work a systematical study to investigate the adsorption structures of small hydrocarbon ring shaped molecules on III-V semiconductor surfaces with Photo-Emission Spectroscopy (PES), Reflectance Anisotropy Spectroscopy (RAS), Scanning Tunneling Microscopy (STM) as well as Low Electron Energy Diffraction (LEED) was performed. To investigate the influence of the surface structure in detail the surface dimer configuration to the adsorption process of organic molecules GaAs(001) surfaces, the c(4 x 4), the (2 x 4) and the (4 x 2) have been investigated as well as the adsorption of cyclopentene on the InP(001)(2 x 4) reconstructed surface. In the direct comparison it is shown that cyclopentene bonds to the InP(001)(2 x 4) surface via a cycloaddition like reaction. During this adsorption the double bond splits which is in contrast to the adsorption of cyclopentene on the GaAs(001) surfaces. Therefrom it is concluded that the surface geometry has an influence on the resulting adsorption structure. In order to investigate the influence of the intra-molecular double bonds, cyclopentene (one double bond), 1,4-cyclohexadiene (two double bonds) and benzene (three double bonds) were used for the characterization of the interface formation. With the investigations on the GaAs(001) reconstructed surfaces it was shown that a dependency of the bonding configuration on the intra-molecular double bonds exists. During the adsorption of cyclopentene no evidence was found that the double bond has to be involved in the interface formation while during the adsorption of 1,4-cyclohexadiene and benzene the double bonds are involved. Furthermore it was found that a bonding to As atoms of the surface is more likely than a bonding to Ga atoms. (orig.)

  10. Nano-photonics in III-V semiconductors for integrated quantum optical circuits

    Science.gov (United States)

    Wasley, Nicholas Andrew

    This thesis describes the optical spectroscopic measurements of III-V semiconductors used to investigate a number of issues related to the development of integrated quantum optical circuits. The disorder-limited propagation of photons in photonic crystal waveguides in the slow-light regime is investigated. The analysis of Fabry-Perot resonances is used to map the mode dispersion and extract the photon localisation length. Andersonlocalised modes are observed at high group indices, when the localisation lengths are shorter than the waveguide lengths, consistent with the Fabry-Perot analysis. A spin-photon interface based on two orthogonal waveguides is introduced, where the polarisation emitted by a quantum dot is mapped to a path-encoded photon. Operation is demonstrated by deducing the spin using the interference of in-plane photons. A second device directly maps right and left circular polarisations to anti-parallel waveguides, surprising for a non-chiral structure but consistent with an off-centre dot. Two dimensional photonic crystal cavities in GaInP and full control over the spontaneous emission rate of InP quantum dots is demonstrated by spectrally tuning the exciton emission energy into resonance with the fundamental cavity mode. Fourier transform spectroscopy is used to investigate the short coherence times of InP quantum dots in GaInP photonic crystal cavities. Additional technological developments are also presented including a quantum dot registration technique, electrical tuning of quantum dot emission and uniaxial strain tuning of H1 cavity modes.

  11. Iii-V Semiconductor Electroabsorption Waveguide Modulators for Long Wavelength Fiber Communication.

    Science.gov (United States)

    Lin, Shyh-Chung

    Long wavelength fiber communication has particular advantages in high speed, long haul communication system applications due to the intrinsic low chromatic dispersion and low attenuation of silica fibers at 1.3 mu m and 1.55 μm wavelengths. However, its implementation has been hampered by the lack of a high speed laser light modulator which has a small frequency variation (chirp) of its optical carrier. This thesis concerns III-V semiconductor electroabsorption waveguide modulators with the intention of improving their chirping characteristics and high speed performance. Analytical work performed in the course of this thesis has led to the following conclusions concerning the design and construction of electroabsorption waveguide modulators (EWM) for laser light modulation. (i) In order to minimize frequency chirping, semiconducting materials chosen for EWM applications should have a direct, fundamental bandgap somewhat greater than that of the incident laser photon energy. (ii) High speed EWMs require some compromises in terms of material parameters as well as dimensional constraints intended to minimize parasitic coupling impedances while providing basic, optimized, modulator functions such as low insertion loss, high modulation index, low driving voltage, and minimum frequency chirping. Experimental research on EWMs performed in the course of this thesis using liquid phase, epitaxially grown, quaternary alloy In_ xGa _{1-x}As_ yP _{1-y} and a laser wavelength of 1.3 μm includes: (i) Design, construction, and performance evaluation of a low capacitance ridge EWM. (ii) Design, construction, and performance evaluation of a buried channel EWM with large on-off ratio and the monolithic integration, in cascade, of such EWMs in order to perform the functions of a high speed phase comparator.

  12. Optical Absorption, Emission, and Modulation in Iii-V Semiconductor Quantum Well Structures

    Science.gov (United States)

    Shank, Steven Marc

    An experimental study of topics relating to optical absorption, emission, and modulation in III-V semiconductor GaAs/AlGaAs quantum well structures is presented. Several novel quantum well structures are examined and evaluated for use in electrooptic modulators, laser diodes, and monolithically integrated laser diodes and passive waveguides. The design of the epitaxial structures, the molecular beam epitaxy growth, the optical characterization of the wafers, the fabrication of the wafers into basic optoelectronic devices (electrooptic waveguides, laser diodes, and segmented laser diodes), and the characterization of these devices are described. The quantum confined Stark effect and its influence on the electrooptic properties of quantum wells are described. In particular, electroabsorption and electrobirefringence in (111)B quantum wells are investigated. This quantum well system is chosen due to the larger heavy hole effective mass compared to standard (100) quantum wells. It is demonstrated that electroabsorption and electrobirefringence are enhanced in (111)B quantum wells, which agrees with theoretical predictions based on the heavy hole mass anisotropy. Computer simulations of the quantum confined Stark effect in asymmetric quantum well structures are described. It is demonstrated that asymmetric quantum wells can exhibit enhanced red shifts of the absorption edge, and blue shifts of the absorption edge under an applied reverse bias. An experimental investigation of laser diodes with asymmetric quantum well active regions is described. An evaluation of the blue shift effect on the interband absorption at the laser wavelength is made and related to the efficiency of these structures for monolithic integration with passive waveguides. The optical properties of n-type modulation doped quantum wells are described. It is shown that the interband absorption at the spontaneous emission peak can be greatly reduced compared to undoped quantum wells. N-type modulation

  13. Theory of band gap bowing of disordered substitutional II-VI and III-V semiconductor alloys

    OpenAIRE

    2011-01-01

    For a wide class of technologically relevant compound III-V and II-VI semiconductor materials AC and BC mixed crystals (alloys) of the type A(x)B(1-x)C can be realized. As the electronic properties like the bulk band gap vary continuously with x, any band gap in between that of the pure AC and BC systems can be obtained by choosing the appropriate concentration x, granted that the respective ratio is miscible and thermodynamically stable. In most cases the band gap does not vary linearly with...

  14. Examination of the Ion Beam Response of III-V Semiconductor Substrates

    Science.gov (United States)

    Grossklaus, Kevin A.

    This work examines the response of the III-V materials to ion beam irradiation in a series of four experimental studies and describes the observed results in terms of the fundamental materials processes and properties that control ion-induced change in those compounds. Two studies investigate the use of Ga+ focused ion beam (FIB) irradiation of III-V substrate materials to create nanostructures. In the first, the creation of FIB induced group III nanodots on GaAs, InP, InAs, and AlAs is studied. The analysis of those results in terms of basic material properties and a simple nanodot growth model represents the first unified investigation of the fundamental processes that drive the nanodot forming behavior of the III-V compounds. The second nanostructure formation study reports the discovery and characterization of unique spike-like InAs nanostructures, termed "nanospikes," which may be useful for nanoscale electronic or thermoelectric applications. A novel method for controlling nanospike formation using InAs/InP heterostructures and film pre-patterning is developed, and the electrical properties of these ion erosion created nanostructures are characterized by in-situ TEM nanoprobe testing in a first-of-its-kind examination. The two remaining studies examine methods for using ion beam modification of III-V substrates to accommodate lattice-mismatched film growth with improved film properties. The first examines the effects of film growth on a wide range of different FIB created 3-D substrate patterns, and finds that 3-D surface features and patterns significantly alter film morphology and that growth on or near FIB irradiated regions does not improve film threading defect density. The second substrate modification study examines broad beam ion pre-implantation of GaAs wafers before InGaAs film growth, and is the first reported study of III-V substrate pre-implantation. Ar + pre-implantation was found to enhance the formation of threading defects in InGaAs films and

  15. Laser Induced Chemical Vapor Phase Epitaxial Growth of III-V semiconductor Films

    Science.gov (United States)

    1991-05-14

    temperatures for the preparation and crystal growth of semiconductors . During the first phase of this program at Southern Methodist University, the epitaxial...approach to the preparation of device-quality 4 semiconductor films of controlled electrical and stru -.tural propierties . The excitation of reaction...temperatures for the preparation and crystal growth of semiconductors . The vapors of essentially all metalorganic compounds and group V hydrides are colorless

  16. Temperature dependence of the photoluminescence polarization of ordered III-V semiconductor alloys

    Energy Technology Data Exchange (ETDEWEB)

    Prutskij, T.; Makarov, N. [Instituto de Ciencias, BUAP, Privada 17 Norte, No 3417, col. San Miguel Huyeotlipan, 72050 Puebla, Pue. (Mexico); Attolini, G. [IMEM/CNR, Parco Area delle Scienze 37/A, 43010 Parma (Italy)

    2016-03-21

    We studied the linear polarization of the photoluminescence (PL) emission of atomically ordered GaInAsP and GaInP alloys with different ordering parameters in the temperature range from 10 to 300 K. The epitaxial layers of these alloys were grown on GaAs and Ge (001) substrates by metal organic vapor phase epitaxy. The polarization of the PL emission propagating along different crystallographic axes depends on the value of biaxial strain in the layer and changes with temperature. We calculated the PL polarization patterns for different propagation directions as a function of biaxial strain using an existing model developed for ternary atomically ordered III-V alloys. Comparing the calculated PL polarization patterns with those obtained experimentally, we separated the variation of the PL polarization due to change of biaxial strain with temperature.

  17. Investigation of Electrical and Optical Properties of Bulk III-V Ternary Semiconductors

    Science.gov (United States)

    2009-03-01

    attained. [7] Many devices, such as optical amplifiers, superluminescent diodes , optoelectronic integrated circuits, IR diodes and detectors, field...desired for tunable lasers, semiconductor optical amplifiers, and superluminescent diodes which require very flat and wide gain spectrums. [8] In

  18. Enhanced amplified spontaneous emission in III-V semiconductor photonic crystal waveguides

    DEFF Research Database (Denmark)

    Ek, Sara; Schubert, Martin; Yvind, Kresten;

    2010-01-01

    We experimentally demonstrate enhanced amplified spontaneous emission in the slow light regime of an active photonic crystal waveguide slab. This promises great opportunities for future devices such as miniaturized semiconductor optical amplifiers and mode-locked lasers.......We experimentally demonstrate enhanced amplified spontaneous emission in the slow light regime of an active photonic crystal waveguide slab. This promises great opportunities for future devices such as miniaturized semiconductor optical amplifiers and mode-locked lasers....

  19. Capacitance-voltage studies of atomic-layer-deposited MOS structrures on Gallium Arsenide and other III-V compound semiconductors

    OpenAIRE

    Yang, Tian

    2007-01-01

    Si-based CMOS devices with traditional structure are approaching the fundamental physical limits. New device structures and materials must be explored to continue the trend of increasing electronic device speed and decreasing size at the same time. Recently, III-V compound semiconductors are considered as novel channel materials to replace Si due to their high electron mobilities. However, the main obstacle to implement III-V as novel channel materials for CMOS application is the lack of high...

  20. On the ferromagnetic exchange in Mn-doped III-V semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Ivanov, V.A.; Krstajic, P.M.; Peeters, F.M.; Fleurov, V.; Kikoin, K

    2003-05-01

    We propose a microscopic model for double exchange in GaAs:Mn, GaP:Mn which is based on the interaction between the transition metal impurities and the heavy holes of host semiconductor. The kinematic exchange is derived and the Curie temperature is calculated which agrees with recent experiments.

  1. Discrimination of defects in III-V semiconductors by positron lifetime distribution

    CERN Document Server

    Chen, Z Q; Wang, S J

    2000-01-01

    In this paper, the numerical Laplace inversion technique and maximum entropy method are utilized to extract continuous positron lifetime distribution in semiconductors. The result is used to discriminate the native vacancy-type defects in as-grown GaAs and In P with different conduction type. Direct evidence of shallow positron traps were also observed in ion-implanted p-In P. It is demonstrated that the lifetime distribution can give us more detailed information on the native defects.

  2. Hybrid integration of III-V semiconductor lasers on silicon waveguides using optofluidic microbubble manipulation

    Science.gov (United States)

    Jung, Youngho; Shim, Jaeho; Kwon, Kyungmook; You, Jong-Bum; Choi, Kyunghan; Yu, Kyoungsik

    2016-07-01

    Optofluidic manipulation mechanisms have been successfully applied to micro/nano-scale assembly and handling applications in biophysics, electronics, and photonics. Here, we extend the laser-based optofluidic microbubble manipulation technique to achieve hybrid integration of compound semiconductor microdisk lasers on the silicon photonic circuit platform. The microscale compound semiconductor block trapped on the microbubble surface can be precisely assembled on a desired position using photothermocapillary convective flows induced by focused laser beam illumination. Strong light absorption within the micro-scale compound semiconductor object allows real-time and on-demand microbubble generation. After the assembly process, we verify that electromagnetic radiation from the optically-pumped InGaAsP microdisk laser can be efficiently coupled to the single-mode silicon waveguide through vertical evanescent coupling. Our simple and accurate microbubble-based manipulation technique may provide a new pathway for realizing high precision fluidic assembly schemes for heterogeneously integrated photonic/electronic platforms as well as microelectromechanical systems.

  3. III-V microelectronics

    CERN Document Server

    Nougier, JP

    1991-01-01

    As is well known, Silicon widely dominates the market of semiconductor devices and circuits, and in particular is well suited for Ultra Large Scale Integration processes. However, a number of III-V compound semiconductor devices and circuits have recently been built, and the contributions in this volume are devoted to those types of materials, which offer a number of interesting properties. Taking into account the great variety of problems encountered and of their mutual correlations when fabricating a circuit or even a device, most of the aspects of III-V microelectronics, from fundamental p

  4. A survey of ohmic contacts to III-V compound semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Baca, A.G.; Zolper, J.C.; Briggs, R.D. [Sandia National Labs., Albuquerque, NM (United States); Ren, F. [Lucent Technologies, Murray Hill, NJ (United States); Pearton, S.J. [Univ. of Florida, Gainesville, FL (United States)

    1997-04-01

    A survey of ohmic contact materials and properties to GaAs, InP, GaN will be presented along with critical issues pertaining to each semiconductor material. Au-based alloys (e.g., GeAuNi for n-type GaAs) are the most commonly used contacts for GaAs and InP materials for both n- and p-type contacts due to the excellent contact resistivity, reliability, and usefulness over a wide range of doping levels. Research into new contacting schemes for these materials has focused on addressing limitations of the conventional Au-alloys in thermal stability, propensity for spiking, poor edge definition, and new approaches for a non-alloyed contact. The alternative contacts to GaAs and InP include alloys with higher temperature stability, contacts based on solid phase regrowth, and contacts that react with the substrate to form lower bandgap semiconductors alloys at the interface. A new area of contact studies is for the wide bandgap group III-Nitride materials. At present, low resistivity ohmic contact to p-type GaN has not been obtained primarily due to the large acceptor ionization energy and the resultant difficulty in achieving high free hole concentrations at room temperature. For n-type GaN, however, significant progress has been reported with reactive Ti-based metalization schemes or the use of graded InGaN layers. The present status of these approaches will be reviewed.

  5. Magnetic properties in III-V diluted magnetic semiconductor quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Dakhlaoui, H. [Departement de Physique, Faculte des Sciences de Bizerte, 7000 (Tunisia); Jaziri, S. [Departement de Physique, Faculte des Sciences de Bizerte, 7000 (Tunisia)]. E-mail: sihem.jaziri@fsb.rnu.tn

    2005-01-31

    Spin injection in low-dimensional semiconductors have a great potential to be used in magnetoelectronics and spintronics. In our work we analyze the electronic properties of the hole gas formed in Ga{sub 1-x}Mn{sub x}As/GaAs/Ga{sub 1-x}Mn{sub x}As heterostructures. We find that there is an RKKY-type exchange coupling between the magnetic layers that oscillates between ferromagnetic and antiferromagnetic as a function of the different parameters of the problem. As an example we calculate the spin-dependent hole density, the polarization and the coupling energy, using an efficient self-consistent procedure to solve simultaneously the Schroedinger and Poisson equations, taking into account the interaction with Mn magnetic moments. Our results indicate that the coupling energy also oscillates in terms of the band offset V{sub w} which describes the difference in electronegativity between the Mn and GaAs atoms.

  6. Bell states generation on a III-V semiconductor chip at room temperature

    CERN Document Server

    Orieux, Adeline; Lemaître, Aristide; Filloux, Pascal; Favero, Ivan; Leo, Giuseppe; Coudreau, Thomas; Keller, Arne; Milman, Pérola; Ducci, Sara

    2013-01-01

    We demonstrate the generation of polarization-entangled photon pairs at room temperature and telecom wavelength in a AlGaAs semiconductor waveguide. The source is based on spontaneous parametric down conversion with a counterpropagating phase-matching scheme. The quality of the two-photon state is assessed by the reconstruction of the density matrix giving a raw fidelity to a Bell state of 0.83; a theoretical model, taking into account the experimental parameters, provides ways to understand and control the amount of entanglement. Its compatibility with electrical injection, together with the high versatility of the generated two-photon state, make this source an attractive candidate for completely integrated quantum photonics devices.

  7. Spin selector based on periodic diluted-magnetic-semiconductor/nonmagnetic-barrier superlattices

    Directory of Open Access Journals (Sweden)

    Ping-Fan Yang

    2015-07-01

    Full Text Available We propose a spin selector based on periodic diluted-magnetic-semiconductor/nonmagnetic-barrier (DMS/NB superlattices subjected to an external magnetic field. We find that the periodic DMS/NB superlattices can achieve 100% spin filtering over a dramatically broader range of incident energies than the diluted-magnetic-semiconductor/semiconductor (DMS/S case studied previously. And the positions and widths of spin-filtering bands can be manipulated effectively by adjusting the geometric parameters of the system or the strength of external magnetic field. Such a compelling filtering feature stems from the introduction of nonmagnetic barrier and the spin-dependent giant Zeeman effect induced by the external magnetic field. We also find that the external electric field can exert a significant influence on the spin-polarized transport through the DMS/NB superlattices.

  8. Spin selector based on periodic diluted-magnetic-semiconductor/nonmagnetic-barrier superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Ping-Fan; Guo, Yong, E-mail: guoy66@tsinghua.edu.cn [Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Zhu, Rui [Department of Physics, South China University of Technology, Guangzhou 510641 (China)

    2015-07-15

    We propose a spin selector based on periodic diluted-magnetic-semiconductor/nonmagnetic-barrier (DMS/NB) superlattices subjected to an external magnetic field. We find that the periodic DMS/NB superlattices can achieve 100% spin filtering over a dramatically broader range of incident energies than the diluted-magnetic-semiconductor/semiconductor (DMS/S) case studied previously. And the positions and widths of spin-filtering bands can be manipulated effectively by adjusting the geometric parameters of the system or the strength of external magnetic field. Such a compelling filtering feature stems from the introduction of nonmagnetic barrier and the spin-dependent giant Zeeman effect induced by the external magnetic field. We also find that the external electric field can exert a significant influence on the spin-polarized transport through the DMS/NB superlattices.

  9. Growth and Characterization of III-V Semiconductors for Device Applications

    Science.gov (United States)

    Williams, Michael D.

    2000-01-01

    The research goal was to achieve a fundamental understanding of the physical processes occurring at the surfaces and interfaces of epitaxially grown InGaAs/GaAs (100) heterostructures. This will facilitate the development of quantum well devices for infrared optical applications and provide quantitative descriptions of key phenomena which impact their performance. Devices impacted include high-speed laser diodes and modulators for fiber optic communications at 1.55 micron wavelengths and intersub-band lasers for longer infrared wavelengths. The phenomenon of interest studied was the migration of indium in InGaAs structures. This work centered on the molecular beam epitaxy reactor and characterization apparatus donated to CAU by AT&T Bell Laboratories. The material characterization tool employed was secondary ion mass spectrometry. The training of graduate and undergraduate students was an integral part of this program. The graduate students received a thorough exposure to state-of-the-art techniques and equipment for semiconductor materials analysis as part of the Master''s degree requirement in physics. The undergraduates were exposed to a minority scientist who has an excellent track record in this area. They also had the opportunity to explore surface physics as a career option. The results of the scientific work was published in a refereed journal and several talks were presented professional conferences and academic seminars.

  10. The role of the substrate on the dispersion in accumulation in III-V compound semiconductor based metal-oxide-semiconductor gate stacks

    Energy Technology Data Exchange (ETDEWEB)

    Krylov, Igor, E-mail: krylov@tx.technion.ac.il [The Russell Berrie Nanotechnology Institute, Technion – Israel Institute of Technology, Haifa 32000 (Israel); Ritter, Dan [The Russell Berrie Nanotechnology Institute, Technion – Israel Institute of Technology, Haifa 32000 (Israel); Department of Electrical Engineering, Technion – Israel Institute of Technology, Haifa 32000 (Israel); Eizenberg, Moshe [The Russell Berrie Nanotechnology Institute, Technion – Israel Institute of Technology, Haifa 32000 (Israel); Department of Materials Science and Engineering, Technion – Israel Institute of Technology, Haifa 32000 (Israel)

    2015-09-07

    Dispersion in accumulation is a widely observed phenomenon in metal-oxide-semiconductor gate stacks based on III-V compound semiconductors. The physical origin of this phenomenon is attributed to border traps located in the dielectric material adjacent to the semiconductor. Here, we study the role of the semiconductor substrate on the electrical quality of the first layers at atomic layer deposited (ALD) dielectrics. For this purpose, either Al{sub 2}O{sub 3} or HfO{sub 2} dielectrics with variable thicknesses were deposited simultaneously on two technology important semiconductors—InGaAs and InP. Significantly larger dispersion was observed in InP based gate stacks compared to those based on InGaAs. The observed difference is attributed to a higher border trap density in dielectrics deposited on InP compared to those deposited on InGaAs. We therefore conclude that the substrate plays an important role in the determination of the electrical quality of the first dielectric monolayers deposited by ALD. An additional observation is that larger dispersion was obtained in HfO{sub 2} based capacitors compared to Al{sub 2}O{sub 3} based capacitors, deposited on the same semiconductor. This phenomenon is attributed to the lower conduction band offset rather than to a higher border trap density.

  11. Intersubband transitions in III-V semiconductors for novel infrared optoelectronic devices

    Science.gov (United States)

    Hossain, Mohammed Imrul

    Intersubband transitions (ISBTs) in the conduction band (CB) of semiconductor multiple quantum wells (QW) have led to devices, like quantum-well infrared photodetectors and quantum cascade lasers (QCL). Due to the complexities related to the valence band (VB), hole ISBTs have not been explored as intensively as their electronic counterparts. Absorption and photoluminescence due to ISBT in the VB have been reported for p-type Si-SiGe QWs but this material system suffers from significant challenges associated with the built-in strain of these lattice mismatched materials. The GaAs/AlGaAs material system is virtually strain-free and quite mature. We are investigating the properties of bound-to-bound inter-valence subband transitions in GaAs QWs with high Al composition barriers for mid-infrared emitters. Hole ISBTs are interesting because the polarization of the light emitted in heavy-to-light hole transitions is not restricted to the perpendicular of the quantum wells (unlike electron ISBTs in the CB due to selection rules), therefore surface emitting QCLs and ultimately vertical-cavity surface emitting devices are possible using these transitions. Moreover the valence-band offset for pure GaAs and AlAs is comparable with the conduction-band offset in the traditional InGaAs/InAlAs lattice matched to InP system. Very recently we have observed strong heavy to light hole absorption and heavy to heavy hole electroluminescence from ridge waveguide structures in the mid infra-red range. We are also investigating dual wavelength mid infra-red QCLs in the InGaAs/InAlAs system lattice matched to InP. This device may be useful in applications like differential absorption lidar where light has to be evaluated and compared at two different frequencies for environmental sensing application. Most approaches to multi-wavelength QCL operation involve the use of heterogeneous cascades. Our design involves a single type of active region, emitting at two widely different wavelengths in

  12. Luminescence properties or rare earth doped III-V and II- VI semiconductors

    Science.gov (United States)

    Alshawa, Amer Kamal

    Two novel step impact optical devices have been proposed by H. J. Lozykowski, the step impact electroluminescence device (SIED) and the step photon amplifier converter (SPAC). The realization of the proposed devices requires systematic study of the optical properties of rare earth doped semiconductors. The experimental data is explained using a kinetics model of energy transfer from the host lattice to the localized core excited states of rare earth isoclectronic structured traps (REI-trap). The numerically simulated lun-finescence rise and decay times show a good general quantitative agreement with experimental data, over a wide range of generation rates. A new quenching mechanism of ytterbium luminescence involving Yb and Fe ions is proposed. Detailed experimental and theoretical studies of the electrolurninescence excitation mechanism of Yb3+ in InP are presented. The electroluminescence (EL) spectra and the kinetics of Yb implanted InP are investigated under pulsed and dc excitations at different temperatures. The plot of natural logarithm (In) of I versus V-1/2 indicates that the direct impact excitation mechanism is a dominant process. A systematic study of the effect of oxygen on ytterbium 4f-4f emission by coimplanting Yb and O into InP is performed. The PL spectra and kinetic processes of InP: Yb and InP: (Yb+O) are recorded as a function of temperature, excitation intensity and annealing temperature and duration. No luminescence was observed after oxygen co-implantation and that is because the exciton bound to a YbIn-OP complex center will not have sufficient energy to excite the core Yb 4f electrons. The photoluminescence spectra and kinetics of Nd- and Yb-implanted CdS were investigated as a function of excitation intensity and temperature. The ac electroluminescence of thulium doped ZnS embedded in boric acid matrix was investigated as a function of voltage, frequency and temperature. The plot of In(I) versus V-1/2 shows a straight line characteristic

  13. Tunable Optical Phenomena and Carrier Recombination Dynamics in III-V Semiconductor Nanostructures

    Science.gov (United States)

    Kumar Thota, Venkata Ramana

    Semiconductor nanostructures such as quantum dots, quantum wires and quantum wells have gained significant attention in the scientific community due to their peculiar properties, which arise from the quantum confinement of charge carriers. In such systems, confinement plays key role and governs the emission spectra. With the advancements in growth techniques, which enable the fabrication of these nanostructured devices with great precision down to the atomic scale, it is intriguing to study and observe quantum mechanical effects through light-matter interactions and new physics governed by the confinement, size, shape and alloy composition. The goal is to reduce the size of semiconductor bulk material to few nanometers, which in turn localizes the charge carriers inside these structures such that the spin associated with them is used to carry and process information within ultra-short time scales. The main focus of this dissertation is the optical studies of quantum dot molecule (QDM) systems. A system where the electrons can tunnel between the two dots leading to observable tunneling effects. The emission spectra of such system has been demonstrated to have both intradot transitions (electron-hole pair residing in the same dot) and interdot transitions (electron-hole pair participating in the recombination origin from different dots). In such a system, it is possible to apply electric field such that the wavefunction associated with the charge carriers can be tuned to an extent of delocalizing between the two dots. This forms the first project of this dissertation, which addresses the origin of the fine structure splitting in the exciton-biexciton cascade. Moreover, we also show how this fine structure can be tuned in the quantum dot molecule system with the application of electric field along the growth direction. This is demonstrated through high resolution polarization dependent photoluminescence spectroscopy on a single QDM, which was described in great detail

  14. Atomic scale images of acceptors in III-V semiconductors. Band bending, tunneling paths and wave functions

    Energy Technology Data Exchange (ETDEWEB)

    Loth, S.

    2007-10-26

    This thesis reports measurements of single dopant atoms in III-V semiconductors with low temperature Scanning Tunneling Microscopy (STM) and Scanning Tunneling Spectroscopy (STS). It investigates the anisotropic spatial distribution of acceptor induced tunneling processes at the {l_brace}110{r_brace} cleavage planes. Two different tunneling processes are identified: conventional imaging of the squared acceptor wave function and resonant tunneling at the charged acceptor. A thorough analysis of the tip induced space charge layers identifies characteristic bias windows for each tunnel process. The symmetry of the host crystal's band structure determines the spatial distribution of the tunneling paths for both processes. Symmetry reducing effects at the surface are responsible for a pronounced asymmetry of the acceptor contrasts along the principal [001] axis. Uniaxial strain fields due to surface relaxation and spin orbit interaction of the tip induced electric field are discussed on the basis of band structure calculations. High-resolution STS studies of acceptor atoms in an operating p-i-n diode confirm that an electric field indeed changes the acceptor contrasts. In conclusion, the anisotropic contrasts of acceptors are created by the host crystal's band structure and concomitant symmetry reduction effects at the surface. (orig.)

  15. Two Dimensional Effective Electron Mass at the Fermi Level in Quantum Wells of III-V, Ternary and Quaternary Semiconductors.

    Science.gov (United States)

    Chakrabarti, S; Chatterjee, B; Debbarma, S; Ghatak, K P

    2015-09-01

    In this paper we study the influence of strong electric field on the two dimensional (2D)effective electron mass (EEM) at the Fermi level in quantum wells of III-V, ternary and quaternary semiconductors within the framework of k x p formalism by formulating a new 2D electron energy spectrum. It appears taking quantum wells of InSb, InAs, Hg(1-x)Cd(x)Te and In(1-x)Ga(x)As(1-y)P(y) lattice matched to InP as examples that the EEM increases with decreasing film thickness, increasing electric field and increases with increasing surface electron concentration exhibiting spikey oscillations because of the crossing over of the Fermi level by the quantized level in quantum wells and the quantized oscillation occurs when the Fermi energy touches the sub-band energy. The electric field makes the mass quantum number dependent and the oscillatory mass introduces quantum number dependent mass anisotropy in addition to energy. The EEM increases with decreasing alloy composition where the variations are totally band structure dependent. Under certain limiting conditions all the results for all the cases get simplified into the well-known parabolic energy bands and thus confirming the compatibility test. The content of this paper finds three applications in the fields of nano-science and technology.

  16. Phase-coherent transport and spin-orbit-coupling in III/V-semiconductor nanowires; Phasenkohaerenter Transport und Spin-Bahn-Wechselwirkung in III/V-Halbleiternanodraehten

    Energy Technology Data Exchange (ETDEWEB)

    Estevez Hernandez, Sergio

    2009-10-16

    Semiconductor nanowires fabricated by a bottom-up approach are not only interesting for the realization of future nanoscaled devices but also appear to be very attractive model systems to tackle fundamental questions concerning the transport in strongly confined systems. In order to avoid the problem connected with carrier depletion, narrowband gap semiconductors, i.e., InAs or InN, or core-shell Nanowires, i.e., GaAs/AlGaAs, are preferred. The underlying reason is that in InAs or InN the Fermi-level pinning in the conduction band results in a carrier accumulation at the surface. In fact, the tubular topology of the surface electron gas opens up the possibility to observe unconventional quantum transport phenomena. When the phase-coherence length in the nanowire is comparable to its dimensions the conductance fluctuates if a magnetic field is applied or if the electron concentration is changed by means of a gate electrode. These so-called universal conductance fluctuations being in the order of e{sup 2}/h originate from the fact that in small disordered samples, electron interference effects are not averaged out. In this work are analyzed universal conductance fluctuations to study the quantum transport properties in InN, InAs and GaAs/AlGaAs nanowires. With the use of a magnetic field and a back-gate electrode the universal conductance fluctuations and localizations effects were analyzed. Since InN and InAs are narrow band gap semiconductors, one naturally expects spin-orbit coupling effects. Because this phenomena is of importance for spin electronic applications. However, owing to the cylindrical symmetry of the InN and InAs nanowires, the latter effect was observable and actually be used to determine the strength of spin-orbit coupling. In order to clearly separate the weak antilocalization effect from the conductance fluctuations, the averaging of the magnetoconductance at different gate voltages was essential. The low-temperature quantum transport properties

  17. Fast pixelated sensors for radiation detection and imaging based on quantum confined structures in III/V semiconductors

    Science.gov (United States)

    Tortora, M.; Biasiol, G.; Cautero, G.; Menk, R. H.; Plaisier, J. R.; Antonelli, M.

    2017-03-01

    In order to improve the characterisation of the delivered beams in many types of photon sources, innovative beam profilers based on III/V semiconductor materials (InGaAs/InAlAs) have been deeply investigated. Owing to a tunable and direct band gap these devices allow radiation detection in a wide spectral range. In order to increase the sensitivity of the device in radiation detection charge amplification on the sensor level is implemented. This is obtained by exploiting In0.75Ga0.25As/In0.75Al0.25As quantum wells (QW) hosting a two-dimensional electron gas (2DEG) through molecular beam epitaxy (MBE). Internal charge-amplification mechanism can be achieved for very low applied voltages, while the high carrier mobility allows the design of very fast photon detectors with sub-nanosecond response times. This technology has been preliminarily exploited to fabricate prototype beam profilers with a strip geometry (with 50-μm-wide strips). Tests were carried out both with conventional X-ray tubes and at the Elettra synchrotron facility. The results testify how these profilers are capable of reconstructing the shape of the beam, as well as estimating the position of the beam centroid with a precision of about 400 nm. Further measurements with different samples of decreasing thickness have shown how this precision could be further improved by an optimised microfabrication. For this reason a new design, based on a membrane-photodetector, is proposed. Results regarding the spatial resolution as function of the sensor thickness will be presented and discussed.

  18. Comprehension of Postmetallization Annealed MOCVD-TiO2 on (NH42S Treated III-V Semiconductors

    Directory of Open Access Journals (Sweden)

    Ming-Kwei Lee

    2012-01-01

    Full Text Available The electrical characteristics of TiO2 films grown on III-V semiconductors (e.g., p-type InP and GaAs by metal-organic chemical vapor deposition were studied. With (NH42S treatment, the electrical characteristics of MOS capacitors are improved due to the reduction of native oxides. The electrical characteristics can be further improved by the postmetallization annealing, which causes hydrogen atomic ion to passivate defects and the grain boundary of polycrystalline TiO2 films. For postmetallization annealed TiO2 on (NH42S treated InP MOS, the leakage current densities can reach 2.7 × 10−7 and 2.3 × 10−7 A/cm2 at ±1 MV/cm, respectively. The dielectric constant and effective oxide charges are 46 and 1.96 × 1012 C/cm2, respectively. The interface state density is 7.13×1011 cm−2 eV−1 at the energy of 0.67 eV from the edge of valence band. For postmetallization annealed TiO2 on (NH42S treated GaAs MOS, The leakage current densities can reach 9.7×10−8 and 1.4×10−7 at ±1 MV/cm, respectively. The dielectric constant and effective oxide charges are 66 and 1.86×1012 C/cm2, respectively. The interface state density is 5.96×1011 cm−2 eV−1 at the energy of 0.7 eV from the edge of valence band.

  19. Semiconducting III-V compounds

    CERN Document Server

    Hilsum, C; Henisch, Heinz R

    1961-01-01

    Semiconducting III-V Compounds deals with the properties of III-V compounds as a family of semiconducting crystals and relates these compounds to the monatomic semiconductors silicon and germanium. Emphasis is placed on physical processes that are peculiar to III-V compounds, particularly those that combine boron, aluminum, gallium, and indium with phosphorus, arsenic, and antimony (for example, indium antimonide, indium arsenide, gallium antimonide, and gallium arsenide).Comprised of eight chapters, this book begins with an assessment of the crystal structure and binding of III-V compounds, f

  20. Characterization of the Structural and Optical Properties of III-V Semiconductor Materials for Solar Cell Applications

    Science.gov (United States)

    Xie, Hongen

    The work contained in this dissertation is focused on the structural and optical properties of III-V semiconductor structures for solar cell applications. By using transmission electron microscopy, many of their structural properties have been investigated, including morphology, defects, and strain relaxation. The optical properties of the semiconductor structures have been studied by photoluminescence and cathodoluminescence. Part of this work is focused on InAs quantum dots (QDs) embedded in AlGaAs matrices. This QD system is important for the realization of intermediate-band solar cells, which has three light absorption paths for high efficiency photovoltaics. The suppression of plastic strain relaxation in the QDs shows a significant improvement of the optoelectronic properties. A partial capping followed by a thermal annealing step is used to achieve spool-shaped QDs with a uniform height following the thickness of the capping layer. This step keeps the height of the QDs below a critical value that is required for plastic relaxation. The spool-shaped QDs exhibit two photoluminescence peaks that are attributed to ground and excited state transitions. The luminescence peak width is associated with the QD diameter distribution. An InAs cover layer formed during annealing is found responsible for the loss of the confinement of the excited states in smaller QDs. The second part of this work is focused on the investigation of the In xGa1-xN thin films having different bandgaps for double-junction solar cells. InxGa1-xN films with x ≤ 0.15 were grown by metal organic chemical vapor deposition. The defects in films with different indium contents have been studied. Their effect on the optical properties of the film have been investigated by cathodoluminescence. InxGa 1-xN films with indium contents higher than 20% were grown by molecular beam epitaxy. The strain relaxation in the films has been measured from electron diffraction patterns taken in cross-sectional TEM

  1. Monitoring of stress relaxation and defect formation in metamorphic III-V semiconductor heterostructures for high-efficiency solar cells; Kontrolle von Spannungsrelaxation und Defektbildung in metamorphen III-V Halbleiterheterostrukturen fuer hocheffiziente Solarzellen

    Energy Technology Data Exchange (ETDEWEB)

    Schoene, Jan

    2009-07-21

    The paper discusses the further development of monolithic III-V multiple solar cells with three pn transitions for applications in concentrating PV systems. These triple solar cells consist of a GaInP upper cell, a GaInAs middle cell and a germanium lower cell, which are connected via electrically conducting and optically transparent tunnel diodes. Efficiencies are higher than 40 % with concentrated light. Demands on materials for III-V high-efficiency solar cells are extremely high. Especially in the metamorphic triple solar cell, for which compound semiconductors with different interatomic distances are deposited epitactically on each other, crystal defects may occur that impair the performance of the solar cell. The use of appropriate layer growing concepts may manipulate the formation of crystal defects and minimize their influence on solar cell performance. Both conventional and high-resolution transmission electron microscopy (TEM and HRTEM) as well as high-resolution X-ray diffraction (HRXRD) were applied successfully for investigating defect formation and layer stresses. In the investigations described, these methods were applied to develop a high-efficiency triple solar cell with a world first efficiency of 41.1 percent in concentrated light. [German] Diese Arbeit beschaeftigt sich mit der Weiterentwicklung von monolithischen III-V-Mehrfach-Solarzellen mit drei pn-Uebergaengen fuer die Anwendung in konzentrierenden Photovoltaiksystemen. Diese Tripelsolarzellen bestehen aus einer GaInP-Oberzelle, einer GaInAs-Mittelzelle und einer Germanium-Unterzelle, die mittels elektrisch leitender und optisch transparenter Tunneldioden verbunden sind. Derartige Solarzellen erzielen mittlerweile Rekordwirkungsgrade von mehr als 40 % unter konzentriertem Licht. Bei den III-V Hocheffizienzsolarzellen sind die Anforderungen an die Materialqualitaet ausserordentlich hoch. Insbesondere bei der metamorphen Tripelsolarzelle, bei der Verbindungshalbleiter mit unterschiedlichen

  2. Position-controlled III-V compound semiconductor nanowire solar cells by selective-area metal-organic vapor phase epitaxy.

    Science.gov (United States)

    Fukui, Takashi; Yoshimura, Masatoshi; Nakai, Eiji; Tomioka, Katsuhiro

    2012-01-01

    We demonstrate position-controlled III-V semiconductor nanowires (NWs) by using selective-area metal-organic vapor phase epitaxy and their application to solar cells. Efficiency of 4.23% is achieved for InP core-shell NW solar cells. We form a 'flexible NW array' without a substrate, which has the advantage of saving natural resources over conventional thin film photovoltaic devices. Four junction NW solar cells with over 50% efficiency are proposed and discussed.

  3. Spin-dependent tunneling time in periodic diluted-magnetic-semiconductor/nonmagnetic-barrier superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Ping-Fan; Guo, Yong, E-mail: guoy66@tsinghua.edu.cn [Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China)

    2016-02-01

    We investigate the tunneling time (dwell time) in periodic diluted-magnetic-semiconductor/nonmagnetic-barrier (DMS/NB) superlattices subjected to an external magnetic field. It is found that spin-dependent resonant bands form in the spectra of dwell time, which can be effectively manipulated by not only the external magnetic field but also the geometric parameters of the system. Moreover, an intuitive semiclassical delay is defined to illustrate the behavior of the dwell time, and the former one is shown to be the result of “smoothing out” the latter one. We also find that the dwell time in diluted-magnetic-semiconductor/semiconductor superlattices behaves surprisingly different from the DMS/NB case, especially for spin-down electrons.

  4. A Review of Ultrahigh Efficiency III-V Semiconductor Compound Solar Cells: Multijunction Tandem, Lower Dimensional, Photonic Up/Down Conversion and Plasmonic Nanometallic Structures

    Directory of Open Access Journals (Sweden)

    Katsuaki Tanabe

    2009-07-01

    Full Text Available Solar cells are a promising renewable, carbon-free electric energy resource to address the fossil fuel shortage and global warming. Energy conversion efficiencies around 40% have been recently achieved in laboratories using III-V semiconductor compounds as photovoltaic materials. This article reviews the efforts and accomplishments made for higher efficiency III-V semiconductor compound solar cells, specifically with multijunction tandem, lower-dimensional, photonic up/down conversion, and plasmonic metallic structures. Technological strategies for further performance improvement from the most efficient (AlInGaP/(InGaAs/Ge triple-junction cells including the search for 1.0 eV bandgap semiconductors are discussed. Lower-dimensional systems such as quantum well and dot structures are being intensively studied to realize multiple exciton generation and multiple photon absorption to break the conventional efficiency limit. Implementation of plasmonic metallic nanostructures manipulating photonic energy flow directions to enhance sunlight absorption in thin photovoltaic semiconductor materials is also emerging.

  5. Semiconductors. Subvol. A. New data and updates for I-VII, III-V, III-VI and IV-VI compounds

    Energy Technology Data Exchange (ETDEWEB)

    Roessler, U (ed.) [Regensburg Univ. (Germany). Inst. fuer Theoretische Physik; Dietl, T.; Dobrowolski, W.; Story, T. [Polish Academy of Sciences, Warszawa (Poland). Lab. for Cryogenic and Spintronic Research; Fernandes da Silva, E.C. [Universidade de Sao Paulo, SP (Brazil). Lab. de Novos Materiais Semiconductores; Hoenerlage, B. [IPCMS/GONLO, 67 - Strasbourg (France); Meyer, B.K. [Giessen Univ. (Germany). 1. Physikalisches Inst.

    2008-07-01

    The Landolt-Boernstein subvolumes III/44A and III/44B update the existing 8 volumes III/41 about Semiconductors and contain new Data and Updates for I-VII, III-V, III-VI, IV, VI and II-VI Compounds. The text, tables figures and references are provided in self-contained document files, each one dedicated to a substance and property. The first subvolume III/44A contains a ''Systematics of Semiconductor Properties'', which should help the non-specialist user to understand the meaning of the material parameters. Hyperlinked lists of substances and properties lead directly to the documents and make the electronic version an easy-to-use source of semiconductor data. In the new updates III/44A and III/44B, links to existing material in III/41 or to related documents for a specific substance are also included. (orig.)

  6. Giant magneto-optical response in non-magnetic semiconductor BiTeI driven by bulk Rashba spin splitting

    OpenAIRE

    Demkó, L.; Schober, G. A. H.; Kocsis, V.; Bahramy, M.S.; Murakawa, H.; Lee, J. S.; Kézsmárki, I.; Arita, R.; Nagaosa, N.; Tokura, Y.

    2012-01-01

    We study the magneto-optical (MO) response of polar semiconductor BiTeI with giant bulk Rashba spin splitting at various carrier densities. Despite being non-magnetic, the material is found to yield a huge MO activity in the infrared region under moderate magnetic fields (

  7. Molecular beam epitaxy engineered III-V semiconductor structures for low-power optically addressed spatial light modulators

    Science.gov (United States)

    Larsson, Anders G.; Maserjian, Joseph

    1992-01-01

    Device approaches are investigated for optically addressed SLMs based on molecular-beam epitaxy (MBE) engineered III-V materials and structures. Strong photooptic effects can be achieved in periodically delta-doped multiple-quantum-well structures, but are still insufficient for high-contrast modulation with only single- or double-pass absorption through active layers of practical thickness. The asymmetric Fabry-Perot cavity approach is employed to permit extinction of light due to interference of light reflected from the front and back surfaces of the cavity. This approach is realized with an all-MBE-grown structure consisting of GaAs/AlAs quarter-wave stack reflector grown over the GaAs substrate as the high reflectance mirror and the GaAs surface as the low reflectance mirror. High-contrast modulation is achieved using a low-power InGaAs/GaAs quantum well laser for the control signal.

  8. Large Magnetic Moments of Arsenic-Doped Mn Clusters and their Relevance to Mn-Doped III-V Semiconductor Ferromagnetism

    CERN Document Server

    Kabir, M; Mookerjee, A; Kabir, Mukul; Mookerjee, Abhijit

    2005-01-01

    We report electronic and magnetic structure of arsenic-doped manganese clusters from density-functional theory using generalized gradient approximation for the exchange-correlation energy. We find that arsenic stabilizes manganese clusters, though the ferromagnetic coupling between Mn atoms are found only in Mn$_2$As and Mn$_4$As clusters with magnetic moments 9 $\\mu_B$ and 17 $\\mu_B$, respectively. For all other sizes, $x=$ 3, 5-10, Mn$_x$As clusters show ferrimagnetic coupling. It is suggested that, if grown during the low temperature MBE, the giant magnetic moments due to ferromagnetic coupling in Mn$_2$As and Mn$_4$As clusters could play a role on the ferromagnetism and on the variation observed in the Curie temperature of Mn-doped III-V semiconductors.

  9. Vortex Laser based on III-V semiconductor metasurface: direct generation of coherent Laguerre-Gauss modes carrying controlled orbital angular momentum.

    Science.gov (United States)

    Seghilani, Mohamed S; Myara, Mikhael; Sellahi, Mohamed; Legratiet, Luc; Sagnes, Isabelle; Beaudoin, Grégoire; Lalanne, Philippe; Garnache, Arnaud

    2016-12-05

    The generation of a coherent state, supporting a large photon number, with controlled orbital-angular-momentum L = ħl (of charge l per photon) presents both fundamental and technological challenges: we demonstrate a surface-emitting laser, based on III-V semiconductor technology with an integrated metasurface, generating vortex-like coherent state in the Laguerre-Gauss basis. We use a first order phase perturbation to lift orbital degeneracy of wavefunctions, by introducing a weak anisotropy called here "orbital birefringence", based on a dielectric metasurface. The azimuthal symmetry breakdown and non-linear laser dynamics create "orbital gain dichroism" allowing selecting vortex handedness. This coherent photonic device was characterized and studied, experimentally and theoretically. It exhibits a low divergence (50 dB vortex purity), and single frequency operation in a stable low noise regime (0.1% rms). Such high performance laser opens the path to widespread new photonic applications.

  10. Large-signal characterizations of DDR IMPATT devices based on group III-V semiconductors at millimeter-wave and terahertz frequencies

    Science.gov (United States)

    Acharyya, Aritra; Mallik, Aliva; Banerjee, Debopriya; Ganguli, Suman; Das, Arindam; Dasgupta, Sudeepto; Banerjee, J. P.

    2014-08-01

    Large-signal (L-S) characterizations of double-drift region (DDR) impact avalanche transit time (IMPATT) devices based on group III-V semiconductors such as wurtzite (Wz) GaN, GaAs and InP have been carried out at both millimeter-wave (mm-wave) and terahertz (THz) frequency bands. A L-S simulation technique based on a non-sinusoidal voltage excitation (NSVE) model developed by the authors has been used to obtain the high frequency properties of the above mentioned devices. The effect of band-to-band tunneling on the L-S properties of the device at different mm-wave and THz frequencies are also investigated. Similar studies are also carried out for DDR IMPATTs based on the most popular semiconductor material, i.e. Si, for the sake of comparison. A comparative study of the devices based on conventional semiconductor materials (i.e. GaAs, InP and Si) with those based on Wz-GaN shows significantly better performance capabilities of the latter at both mm-wave and THz frequencies.

  11. Density Functional Theory Simulations of Semiconductors for Photovoltaic Applications: Hybrid Organic-Inorganic Perovskites and III/V Heterostructures

    Directory of Open Access Journals (Sweden)

    Jacky Even

    2014-01-01

    Full Text Available Potentialities of density functional theory (DFT based methodologies are explored for photovoltaic materials through the modeling of the structural and optoelectronic properties of semiconductor hybrid organic-inorganic perovskites and GaAs/GaP heterostructures. They show how the properties of these bulk materials, as well as atomistic relaxations, interfaces, and electronic band-lineups in small heterostructures, can be thoroughly investigated. Some limitations of available standard DFT codes are discussed. Recent improvements able to treat many-body effects or based on density-functional perturbation theory are also reviewed in the context of issues relevant to photovoltaic technologies.

  12. Systematic defect donor levels in III-V and II-VI semiconductors revealed by hybrid functional density-functional theory

    Science.gov (United States)

    Petretto, Guido; Bruneval, Fabien

    2015-12-01

    The identification of defect levels from photoluminescence spectroscopy is a useful but challenging task. Density-functional theory (DFT) is a highly valuable tool to this aim. However, the semilocal approximations of DFT that are affected by a band gap underestimation are not reliable to evaluate defect properties, such as charge transition levels. It is now established that hybrid functional approximations to DFT improve the defect description in semiconductors. Here we demonstrate that the use of hybrid functionals systematically stabilizes donor defect states in the lower part of the band gap for many defects, impurities or vacancies, in III-V and in II-VI semiconductors, even though these defects are usually considered as acceptors. These donor defect states are a very general feature and, to the best of our knowledge, have been overlooked in previous studies. The states we identify here may challenge the older assignments to photoluminescent peaks. Though appealing to screen quickly through the possible stable charge states of a defect, semilocal approximations should not be trusted for that purpose.

  13. Scattering amplitudes and static atomic correction factors for the composition-sensitive 002 reflection in sphalerite ternary III-V and II-VI semiconductors.

    Science.gov (United States)

    Schowalter, M; Müller, K; Rosenauer, A

    2012-01-01

    Modified atomic scattering amplitudes (MASAs), taking into account the redistribution of charge due to bonds, and the respective correction factors considering the effect of static atomic displacements were computed for the chemically sensitive 002 reflection for ternary III-V and II-VI semiconductors. MASAs were derived from computations within the density functional theory formalism. Binary eight-atom unit cells were strained according to each strain state s (thin, intermediate, thick and fully relaxed electron microscopic specimen) and each concentration (x = 0, …, 1 in 0.01 steps), where the lattice parameters for composition x in strain state s were calculated using continuum elasticity theory. The concentration dependence was derived by computing MASAs for each of these binary cells. Correction factors for static atomic displacements were computed from relaxed atom positions by generating 50 × 50 × 50 supercells using the lattice parameter of the eight-atom unit cells. Atoms were randomly distributed according to the required composition. Polynomials were fitted to the composition dependence of the MASAs and the correction factors for the different strain states. Fit parameters are given in the paper.

  14. Transformational III-V Electronics

    KAUST Repository

    Nour, Maha A.

    2014-04-01

    Flexible electronics using III-V materials for nano-electronics with high electron mobility and optoelectronics with direct band gap are attractive for many applications. This thesis describes a complementary metal oxide semiconductor (CMOS) compatible process for transforming traditional III-V materials based electronics into flexible one. The thesis reports releasing 200 nm of Gallium Arsenide (GaAs) from 200 nm GaAs / 300 nm Aluminum Arsenide (AlAs) stack on GaAs substrate using diluted hydrofluoric acid (HF). This process enables releasing a single top layer compared to peeling off all layers with small sizes at the same time. This is done utilizing a network of release holes that contributes to the better transparency (45 % at 724 nm wavelengths) observed. Fabrication of metal oxide semiconductor capacitor (MOSCAPs) on GaAs is followed by releasing it to have devices on flexible 200 nm GaAs. Similarly, flexible GaSb and InP fabrication process is also reported to transform traditional electronics into large-area flexible electronics.

  15. The interface of the ferromagnetic metal CoS2 and the nonmagnetic semiconductor FeS2

    KAUST Repository

    Nazir, S.

    2010-11-05

    The electronic and magnetic properties of the cubic pyriteCoS2/FeS2interface are studied using the all-electron full-potential linearized augmented plane wave method. We find that this contact between a ferromagneticmetal and a nonmagnetic semiconductor shows a metallic character. The CoS2 stays close to half-metallicity at the interface, while the FeS2 becomes metallic. The magnetic moment of the Co atoms at the interface slightly decreases as compared to the bulk value and a small moment is induced on the Fe atoms. Furthermore, at the interfaceferromagnetic ordering is found to be energetically favorable as compared to antiferromagnetic ordering.

  16. Enhanced infrared magneto-optical response of the nonmagnetic semiconductor BiTeI driven by bulk Rashba splitting.

    Science.gov (United States)

    Demkó, L; Schober, G A H; Kocsis, V; Bahramy, M S; Murakawa, H; Lee, J S; Kézsmárki, I; Arita, R; Nagaosa, N; Tokura, Y

    2012-10-19

    We study the magneto-optical (MO) response of the polar semiconductor BiTeI with giant bulk Rashba spin splitting at various carrier densities. Despite being nonmagnetic, the material is found to yield a huge MO activity in the infrared region under moderate magnetic fields (up to 3 T). Our first-principles calculations show that the enhanced MO response of BiTeI comes mainly from the intraband transitions between the Rashba-split bulk conduction bands. These transitions connecting electronic states with opposite spin directions become active due to the presence of strong spin-orbit interaction and give rise to distinct features in the MO spectra with a systematic doping dependence. We predict an even more pronounced enhancement in the low-energy MO response and dc Hall effect near the crossing (Dirac) point of the conduction bands.

  17. Magnetism at the Interface of Magnetic Oxide and Nonmagnetic Semiconductor Quantum Dots.

    Science.gov (United States)

    Saha, Avijit; Viswanatha, Ranjani

    2017-03-28

    Engineering interfaces specifically in quantum dot (QD) heterostructures provide several prospects for developing multifunctional building block materials. Precise control over internal structure by chemical synthesis offers a combination of different properties in QDs and allows us to study their fundamental properties, depending on their structure. Herein, we studied the interface of magnetic/nonmagnetic Fe3O4/CdS QD heterostructures. In this work, we demonstrate the decrease in the size of the magnetic core due to annealing at high temperature by the decrease in saturation magnetization and blocking temperature. Furthermore, surprisingly, in a prominently optically active and magnetically inactive material such as CdS, we observe the presence of substantial exchange bias in spite of the nonmagnetic nature of CdS QDs. The presence of exchange bias was proven by the increase in magnetic anisotropy as well as the presence of exchange bias field (HE) during the field-cooled magnetic measurements. This exchange coupling was eventually traced to the in situ formation of a thin antiferromagnetic FeS layer at the interface. This is verified by the study of Fe local structure using X-ray absorption fine structure spectroscopy, demonstrating the importance of interface engineering in QDs.

  18. Spin Injection from Ferromagnetic Metal Directly into Non-Magnetic Semiconductor under Different Injection Currents

    Institute of Scientific and Technical Information of China (English)

    DENG Ning; TANG Jian-Shi; ZHANG Lei; ZHANG Shu-Chao; CHEN Pei-Yi

    2010-01-01

    @@ For ferromagnetic metal(FM)/semiconductor(SC)structure with ohmic contact,the effect of carrier polarization in the semiconductor combined with drift part of injection current on current polarization is investigated.Based on the general model we established here,spin injection efficiency under different injection current levels is calculated.Under a reasonable high injection current,current polarization in the semiconductor is actually much larger than that predicted by the conductivity mismatch model because the effect of carrier polarization is enhanced by the increasing drift current.An appreciable current polarization of 1% could be achieved for the FM/SC structure via ohmic contact,which means that efficient spin injection from FM into SC via ohmic contact is possible.The reported dependence of current polarization on temperature is verified quantitatively.To achieve even larger spin injection efficiency,a gradient doping semiconductor is suggested to enhance the drift current effect.

  19. Hybrid III-V/silicon lasers

    Science.gov (United States)

    Kaspar, P.; Jany, C.; Le Liepvre, A.; Accard, A.; Lamponi, M.; Make, D.; Levaufre, G.; Girard, N.; Lelarge, F.; Shen, A.; Charbonnier, P.; Mallecot, F.; Duan, G.-H.; Gentner, J.-.; Fedeli, J.-M.; Olivier, S.; Descos, A.; Ben Bakir, B.; Messaoudene, S.; Bordel, D.; Malhouitre, S.; Kopp, C.; Menezo, S.

    2014-05-01

    The lack of potent integrated light emitters is one of the bottlenecks that have so far hindered the silicon photonics platform from revolutionizing the communication market. Photonic circuits with integrated light sources have the potential to address a wide range of applications from short-distance data communication to long-haul optical transmission. Notably, the integration of lasers would allow saving large assembly costs and reduce the footprint of optoelectronic products by combining photonic and microelectronic functionalities on a single chip. Since silicon and germanium-based sources are still in their infancy, hybrid approaches using III-V semiconductor materials are currently pursued by several research laboratories in academia as well as in industry. In this paper we review recent developments of hybrid III-V/silicon lasers and discuss the advantages and drawbacks of several integration schemes. The integration approach followed in our laboratory makes use of wafer-bonded III-V material on structured silicon-on-insulator substrates and is based on adiabatic mode transfers between silicon and III-V waveguides. We will highlight some of the most interesting results from devices such as wavelength-tunable lasers and AWG lasers. The good performance demonstrates that an efficient mode transfer can be achieved between III-V and silicon waveguides and encourages further research efforts in this direction.

  20. A comprehensive study of the magnetic, structural, and transport properties of the III-V ferromagnetic semiconductor InMnP

    Energy Technology Data Exchange (ETDEWEB)

    Khalid, M.; Hübner, R.; Baehtz, C.; Skorupa, W.; Zhou, Shengqiang, E-mail: S.Zhou@hzdr.de [Helmholtz-Zentrum Dresden Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, D-01328 Dresden (Germany); Gao, Kun; Helm, M. [Helmholtz-Zentrum Dresden Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, D-01328 Dresden (Germany); Technische Universität Dresden, 01062 Dresden (Germany); Weschke, E. [Helmholtz-Zentrum Berlin für Materialien und Energie, Wilhelm-Conrad-Röntgen-Campus BESSY II, D-12489 Berlin (Germany); Gordan, O.; Salvan, G.; Zahn, D. R. T. [Institute of Physics, Chemnitz University of Technology, 09107 Chemnitz (Germany)

    2015-01-28

    The manganese induced magnetic, electrical, and structural modification in InMnP epilayers, prepared by Mn ion implantation and pulsed laser annealing, are investigated in the following work. All samples exhibit clear hysteresis loops and strong spin polarization at the Fermi level. The degree of magnetization, the Curie temperature, and the spin polarization depend on the Mn concentration. The bright-field transmission electron micrographs show that InP samples become almost amorphous after Mn implantation but recrystallize after pulsed laser annealing. We did not observe an insulator-metal transition in InMnP up to a Mn concentration of 5 at. %. Instead all InMnP samples show insulating characteristics up to the lowest measured temperature. Magnetoresistance results obtained at low temperatures support the hopping conduction mechanism in InMnP. We find that the Mn impurity band remains detached from the valence band in InMnP up to 5 at. % Mn doping. Our findings indicate that the local environment of Mn ions in InP is similar to GaMnAs, GaMnP, and InMnAs; however, the electrical properties of these Mn implanted III-V compounds are different. This is one of the consequences of the different Mn binding energy in these compounds.

  1. Heating of carriers as controlled by the combined interactions with acoustic and piezoelectric phonons in degenerate III-V semiconductors at low lattice temperature

    Science.gov (United States)

    Bhattacharya, D. P.; Das, J.; Basu, A.; Das, B.

    2017-09-01

    In compound semiconductors which lack inversion symmetry, the combined interaction of the electrons with both acoustic and piezoelectric phonons is dominant at low lattice temperatures ( 20 K). The field dependence of the effective electron temperature under these conditions, has been calculated by solving the modified energy balance equation that takes due account of the degeneracy. The traditionally used heated Fermi-Dirac (F.D.) function for the non-equilibrium distribution function is approximated by some well tested model distribution. This makes it possible to carry out the integrations quite easily and, thus to obtain some more realistic results in a closed form, without taking recourse to any oversimplified approximations. The numerical results that follow for InSb, InAs and GaN, from the present analysis, are then compared with the available theoretical and experimental data. The degeneracy and the piezoelectric interaction, both are seen to bring about significant changes in the electron temperature characteristics. The scope for further refinement is discussed.

  2. Monolithic III-V and hybrid polysilicon-III-V microelectromechanical tunable vertical-cavity surface-emitting lasers

    Science.gov (United States)

    Ochoa, Edward M.; Lott, James A.; Nelson, Thomas R., Jr.; Harvey, M. C.; Raley, J. A.; Stintz, Andreas; Malloy, Kevin J.

    2003-04-01

    We report our progress on the design and fabrication of electrostatically-actuated microelectromechanical (MEM) tunable wavelength filters and vertical cavity surface-emitting lasers (VCSELs). We investigate both an all-semiconductor monolithic approach and a hybrid approach based on the combination of conventional polysilicon microelectromechanical systems (MEMS) and III-V semiconductor thin-film distributed Bragg reflector (DBR) and VCSEL structures. In the tunable hybrid structures the III-V semiconductor layers are flip-bonded onto specially designed polysilicon foundry MEMS structures and separated from their lattice-matched parent substrates by a novel post-bonding lift-off process.

  3. III-V compound SC for optoelectronic devices

    Directory of Open Access Journals (Sweden)

    Sudha Mokkapati

    2009-04-01

    Full Text Available III-V compound semiconductors (SC have played a crucial role in the development of optoelectronic devices for a broad range of applications. Major applications of InP or GaAs based III-V compound SC are devices for optical fiber communications, infrared and visible LEDs/LDs and high efficiency solar cells. GaN based compounds are extremely important for short wavelength light emitters used in solid state lighting systems. We review the important device applications of various III-V compound SC materials.

  4. Practical routes to (SiH₃)₃P: applications in group IV semiconductor activation and in group III-V molecular synthesis.

    Science.gov (United States)

    Tice, Jesse B; Chizmeshya, A V G; Tolle, J; D' Costa, V R; Menendez, J; Kouvetakis, J

    2010-05-21

    The (SiH₃)₃P hydride is introduced as a practical source for n-doping of group IV semiconductors and as a highly-reactive delivery agent of -(SiH₃)₂P functionalities in exploratory synthesis. In contrast to earlier methods, the compound is produced here in high purity quantitative yields via a new single-step method based on reactions of SiH₃Br and (Me₃Sn)₃P, circumventing the need for toxic and unstable starting materials. As an initial demonstration of its utility we synthesized monosubstituted Me₂M-P(SiH₃)₂ (M = Al, Ga, In) derivatives of Me₃M containing the (SiH₃)₂P ligand for the first time, in analogy to the known Me₂M-P(SiMe₃)₂ counterparts. A dimeric structure of Me₂M-P(SiH₃)₂ is proposed on the basis of spectroscopic characterizations and quantum chemical simulations. Next, in the context of materials synthesis, the (SiH₃)₃P compound was used to dope germanium for the first time by building a prototype p(++)Si(100)/i-Ge/n-Ge photodiode structure. The resultant n-type Ge layers contained active carrier concentrations of 3-4 × 10¹⁹ atoms cm⁻³ as determined by spectroscopic ellipsometry and confirmed by SIMS. Strain analysis using high resolution XRD yielded a Si content of 4 × 10²⁰ atoms cm⁻³ in agreement with SIMS and within the range expected for incorporating Si₃P type units into the diamond cubic Ge matrix. Extensive characterizations for structure, morphology and crystallinity indicate that the Si co-dopant plays essentially a passive role and does not compromise the device quality of the host material nor does it fundamentally alter its optical properties.

  5. Electronic Properties of III-V Semiconductors under [111] Uniaxial Strain; a Tight-Binding Approach: I. Arsenides and Gallium Phosphide

    Directory of Open Access Journals (Sweden)

    Miguel E. Mora-Ramos

    2009-01-01

    Full Text Available Empleando un esquema de cálculo tight-binding que usa una base de orbitales sp3s*d5, se estudian propiedades de la estructura electrónica de un grupo de materiales semiconductores IIIV los cuales son de notable interés para la tecnología de dispositivos electrónicos y optoelectrónicos. En específico, se analiza la influencia sobre estas propiedades de una tensión aplicada según la dirección cristalográfica [111], haciendo uso de una formulación basada en la teoría de la elasticidad para establecer las posiciones relativas de los iones vecinos más próximos. Especial atención se presta a la inclusión del efecto de deformación interna de la red cristalina. Para cada material de los estudiados presentamos las dependencias de las brechas energéticas asociadas a los puntos L, X y L de la zona de Brillouin como funciones de la tensión uniaxial en AlAs, GaAs, InAs y GaP. Asimismo, reportamos expresiones de ajuste para los valores de las masas efectivas de conducción en esos cuatro materiales. La comparación de la variación de la brecha de energía en X para el GaP, calculada con nuestro modelo, y recientes resultados experimentales para la transición indirecta entre la banda de huecos pesados y la banda X de conducción arroja una muy buena concordancia.

  6. Optical properties of InAsBi and optimal designs of lattice-matched and strain-balanced III-V semiconductor superlattices

    Science.gov (United States)

    Webster, P. T.; Shalindar, A. J.; Riordan, N. A.; Gogineni, C.; Liang, H.; Sharma, A. R.; Johnson, S. R.

    2016-06-01

    The optical properties of bulk InAs0.936Bi0.064 grown by molecular beam epitaxy on a (100)-oriented GaSb substrate are measured using spectroscopic ellipsometry. The index of refraction and absorption coefficient are measured over photon energies ranging from 44 meV to 4.4 eV and are used to identify the room temperature bandgap energy of bulk InAs0.936Bi0.064 as 60.6 meV. The bandgap of InAsBi is expressed as a function of Bi mole fraction using the band anticrossing model and a characteristic coupling strength of 1.529 eV between the Bi impurity state and the InAs valence band. These results are programmed into a software tool that calculates the miniband structure of semiconductor superlattices and identifies optimal designs in terms of maximizing the electron-hole wavefunction overlap as a function of transition energy. These functionalities are demonstrated by mapping the design spaces of lattice-matched GaSb/InAs0.911Sb0.089 and GaSb/InAs0.932Bi0.068 and strain-balanced InAs/InAsSb, InAs/GaInSb, and InAs/InAsBi superlattices on GaSb. The absorption properties of each of these material systems are directly compared by relating the wavefunction overlap square to the absorption coefficient of each optimized design. Optimal design criteria are provided for key detector wavelengths for each superlattice system. The optimal design mid-wave infrared InAs/InAsSb superlattice is grown using molecular beam epitaxy, and its optical properties are evaluated using spectroscopic ellipsometry and photoluminescence spectroscopy.

  7. Quantum size effects on spin-transfer torque in a double barrier magnetic tunnel junction with a nonmagnetic-metal (semiconductor) spacer

    Science.gov (United States)

    Daqiq, Reza; Ghobadi, Nader

    2016-07-01

    We study the quantum size effects of an MgO-based double barrier magnetic tunnel junction with a nonmagnetic-metal (DBMTJ-NM) (semiconductor (DBMTJ-SC)) spacer on the charge current and the spin-transfer torque (STT) components using non-equilibrium Green's function (NEGF) formalism. The results show oscillatory behavior due to the resonant tunneling effect depending on the structure parameters. We find that the charge current and the STT components in the DBMTJ-SC demonstrate the magnitude enhancement in comparison with the DBMTJ-NM. The bias dependence of the STT components in a DBMTJ-NM shows different behavior in comparison with spin valves and conventional MTJs. Therefore, by choosing a specific SC spacer with suitable thickness in a DBMTJ the charge current and the STT components significantly increase so that one can design a device with high STT and faster magnetization switching.

  8. Studies on II-VI and III-V semiconductor nanostructures. Introduction of the core/shell/shell structure and development of CdSe nanocrystals in an automatized procedure; Untersuchungen an II-VI und III-V Halbleiternanostrukturen. Einfuehrung der Core/shell/shell-Struktur und Darstellung von CdSe-Nanokristallen in einem automatisierten Verfahren

    Energy Technology Data Exchange (ETDEWEB)

    Mekis, I.

    2005-11-15

    The work in this dissertation is focused on the development and characterization of fluorescent II-VI and III-V-Nanomaterials. Highly luminescent and photostable Nanocrystals with narrow size distributions were prepared. It was shown that nearly monodisperse CdSe-Nanocrystals could be prepared from Cd(Ac){sub 2} and TOPSe in a mixture of TOPO/TOP/HDA/TDPA. Nearly monodisperse CdSe/CdS-Core/shell-Nanocrystals have been prepared in a one-pot-synthesis by injection of H{sub 2}S-Gas into a freshly prepared crude solution of CdSe. The passivation of the CdSe-core with an inorganic shell of CdS resulted in the drastic improvement of the photoluminescence-efficiency of the colloidal solution. Reproducible room-temperature quantum yields reached up to a value of 85%. Photostability investigations have proved the enhanced stability of CdSe/CdS-Nanocrystals compared to CdSe-Nanocrystals under illumination with UV-Light. A novel type of luminescent semiconductor nanocrystal structure has been developed, consisting of a CdSe core and two anorganic shells. Highly fluorescent and nearly monodisperse CdSe/CdS/ZnS- and CdSe/ZnSe/ZnS-Core/shell/shell-nanocrystals have been prepared via organometallic- and acetate-precursors. The Core/she ll/shell particles reached reproducible room-temperature quantum yields up to 85%. Photostability investigations among CdSe-core, CdSe/CdS-Core/shell- and CdSe/CdS/ZnS- Core/shell/-shell-nanocrystals under illumination with UV-light have proved the highest photostability of the Core/shell/shell-particles. The photostabilities of CdSe/ZnSe/ZnS-and CdSe/ZnS-nanocrystals were compared under illumination with intense laser-beam in air. Another part of this work focused on the development of an automated synthesis procedure of CdSe-nanocrystals by constructing and implementing a flow-reactor system. The size and structure of prepared nanocrystals depended considerably on the Cd:Se-precursorratio and the flow-rate. The preparation of CdSe using Cd(Ac)2

  9. Enhanced infrared magneto-optical response of the nonmagnetic semiconductor BiTeI driven by bulk Rashba splitting

    Energy Technology Data Exchange (ETDEWEB)

    Demko, L.; Tokura, Y. [Multiferroics Project, ERATO, JST, c/o Department of Applied Physics, University of Tokyo (Japan); Schober, G.A.H. [Institute for Theoretical Physics, University of Heidelberg (Germany); Kocsis, V.; Kezsmarki, I. [Department of Physics, Budapest University of Technology and Economics and Condensed Matter Research Group of the Hungarian Academy of Sciences (Hungary); Bahramy, M.S.; Murakawa, H. [CMRG and CERG, RIKEN ASI (Japan); Lee, J.S.; Arita, R.; Nagaosa, N. [Department of Applied Physics, University of Tokyo (Japan)

    2013-07-01

    We study the magneto-optical (MO) response of the polar semiconducting BiTeI with giant bulk Rashba spin splitting at various carrier densities. Despite being nonmagnetic, the material is found to yield a huge MO activity in the infrared region under moderate magnetic fields (up to 3 T). Our first-principles calculations show that the enhanced MO response of BiTeI comes mainly from the intraband transitions between the Rashba-split bulk conduction bands. These transitions connecting electronic states with opposite spin directions become active due to the presence of strong spin-orbit interaction and give rise to distinct features in the MO spectra with a systematic doping dependence. We predict an even more pronounced enhancement in the low-energy MO response and dc Hall effect near the crossing (Dirac) point of the conduction bands.

  10. Quantum size effects on spin-transfer torque in a double barrier magnetic tunnel junction with a nonmagnetic-metal (semiconductor) spacer

    Energy Technology Data Exchange (ETDEWEB)

    Daqiq, Reza; Ghobadi, Nader

    2016-07-15

    We study the quantum size effects of an MgO-based double barrier magnetic tunnel junction with a nonmagnetic-metal (DBMTJ-NM) (semiconductor (DBMTJ-SC)) spacer on the charge current and the spin-transfer torque (STT) components using non-equilibrium Green's function (NEGF) formalism. The results show oscillatory behavior due to the resonant tunneling effect depending on the structure parameters. We find that the charge current and the STT components in the DBMTJ-SC demonstrate the magnitude enhancement in comparison with the DBMTJ-NM. The bias dependence of the STT components in a DBMTJ-NM shows different behavior in comparison with spin valves and conventional MTJs. Therefore, by choosing a specific SC spacer with suitable thickness in a DBMTJ the charge current and the STT components significantly increase so that one can design a device with high STT and faster magnetization switching. - Highlights: • The quantum size effects are studied in double barrier magnetic tunnel junctions. • Spin torque (ST) components oscillate for increasing of middle spacer thicknesses. • Due to the resonant tunneling in the quantum well, oscillations have appeared. • By replacement a metal spacer with a semiconductor (ZnO) ST has increased. • The ST components vs. bias show gradually decreasing unlike spin valves or MTJs.

  11. Analysis and evaluation for practical application of photovoltaic power generation system. Analysis and evaluation for development of extra-high efficiency solar cells (fundamental research on extra-high efficiency III-V compound semiconductor tandem solar cells); Taiyoko hatsuden system jitsuyoka no tame no kaiseki hyoka. Chokokoritsu taiyo denchi no gijutsu kaihatsu no tame no kaiseki hyoka (chokokoritsu III-V zoku kagobutsu taiyo denchi gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    Sekikawa, T.; Kawanami, H.; Sakata, I.; Nagai, K.; Matsumoto, K.; Miki, K. [Electrotechnical Laboratory, Tsukuba (Japan)

    1994-12-01

    Described herein are the results of the FY1994 research program for development of extra-high efficiency III-V compound semiconductor tandem solar cells. Heteroepitaxial structures of compound semiconductors, such as GaAs, on silicon substrates are analyzed and evaluated by EXAFS, Raman and RHEED for the initial stage of the film growth and heterointerfaces. The device capable of in-situ observation of the growing surface structures during the period of heteroepitaxial film growth is introduced, to investigate the effects of rise-up and initial growth conditions on defects. The effects of atomic hydrogen on growth of a GaAs film on a silicon substrate are investigated from photoluminescence and solar cell characteristics, to confirm the effects of reducing defects. Heteroepitaxial growth of InGaP, which has the optimum band width for forming multi-junction silicon solar cells, on a silicon substrate is investigated, to find that an interfacial buffer layer is necessary to form a good film. 2 figs.

  12. Integration of III-V materials and Si-CMOS through double layer transfer process

    Science.gov (United States)

    Lee, Kwang Hong; Bao, Shuyu; Fitzgerald, Eugene; Tan, Chuan Seng

    2015-03-01

    A method to integrate III-V compound semiconductor and SOI-CMOS on a common Si substrate is demonstrated. The SOI-CMOS layer is temporarily bonded on a Si handle wafer. Another III-V/Si substrate is then bonded to the SOI-CMOS containing handle wafer. Finally, the handle wafer is released to realize the SOI-CMOS on III-V/Si hybrid structure on a common substrate. Through this method, high temperature III-V materials growth can be completed without the presence of the temperature sensitive CMOS layer, hence damage to the CMOS layer is avoided.

  13. Discontinuities and bands alignments of strain-balanced III-V-N/III-V-Bi heterojunctions for mid-infrared photodetectors

    Science.gov (United States)

    Chakir, K.; Bilel, C.; Habchi, M. M.; Rebey, A.

    2017-02-01

    We have developed a 10- and 14-band anticrossing (BAC) models to investigate the band structures of dilute nitrides and dilute bismides alloys. In fact, the addition of Bi or N to III-V semiconductors causes a significant reduction in the band gap energy and an enhancement of the spin-orbit splitting energy. Further, the conduction and valence offsets between III-V-N/III-V-Bi were also investigated for different nitrogen and bismuth concentrations. For III-V-N/III-V-Bi heterojunctions, the strain-balanced criteria were undertaken by the zero stress analysis. The band alignment of strain-balanced GaAsN/GaAsBi, InPN/InPBi and InAsN/InAsBi is a type II. For InSbN/InSbBi heterostructure, the band lineup can be type I or II.

  14. Pressure-driven phase transition from antiferromagnetic semiconductor to nonmagnetic metal in the two-leg ladders A Fe2X3 (A =Ba ,K ; X =S ,Se )

    Science.gov (United States)

    Zhang, Yang; Lin, Lingfang; Zhang, Jun-Jie; Dagotto, Elbio; Dong, Shuai

    2017-03-01

    The recent discovery of superconductivity in BaFe2S3 [H. Takahashi et al., Nat. Mater. 14, 1008 (2015), 10.1038/nmat4351] has stimulated considerable interest in 123-type iron chalcogenides. This material is the first reported iron-based two-leg ladder superconductor, as opposed to the prevailing two-dimensional layered structures of the iron superconductor family. Once the hydrostatic pressure exceeds 11 GPa, BaFe2S3 changes from a semiconductor to a superconductor below 24 K. Although previous calculations correctly explained its ground-state magnetic state and electronic structure, the pressure-induced phase transition was not successfully reproduced. In this work, our first-principles calculations show that with increasing pressure the lattice constants as well as local magnetic moments are gradually suppressed, followed by a first-order magnetic transition at a critical pressure, with local magnetic moments dropping to zero suddenly. Our calculations suggest that the self-doping caused by electrons transferred from S to Fe may play a key role in this transition. The development of a nonmagnetic metallic phase at high pressure may pave the way to superconductivity. As extensions of this effort, two other 123-type iron chalcogenides, KFe2S3 and KFe2Se3 , have also been investigated. KFe2S3 also displays a first-order transition with increasing pressure, but KFe2Se3 shows instead a second-order or weakly first-order transition. The required pressures for KFe2S3 and KFe2Se3 to quench the magnetism are higher than for BaFe2S3 . Further experiments could confirm the predicted first-order nature of the transition in BaFe2S3 and KFe2S3 , as well as the possible metallic/superconductivity state in other 123-type iron chalcogenides under high pressure.

  15. Subnanometer scale characterization of III-V-heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Lakner, H. [Gerhard-Mercator-Univ. Duisburg (Germany). Werkstoffe der Elektrotechnik

    1996-12-31

    Heterostructures based on III-V semiconductors play a dominant role for the production of optoelectronic /1/ and electronic high-speed or high-frequency /2/ devices. The necessary band-gap engineering is achieved by optimized growth procedures which allow to change the chemical composition and the crystal structure (e.g., strain or ordering) on the subnanometer scale. The evaluation of individual heterointerfaces with respect to chemical composition and crystal structure requires characterization techniques which offer the necessary high spatial resolution. Scanning transmission electron microscopy (STEM) offers several of such quantitative techniques. It is the intention of this paper to demonstrate the capabilities of STEM in the subnanometer characterization of III-V-heterostructures based on InP-substrates. Additionally, the data obtained from nanocharacterization can be correlated to device performance.

  16. Ultra-high-throughput Production of III-V/Si Wafer for Electronic and Photonic Applications.

    Science.gov (United States)

    Geum, Dae-Myeong; Park, Min-Su; Lim, Ju Young; Yang, Hyun-Duk; Song, Jin Dong; Kim, Chang Zoo; Yoon, Euijoon; Kim, SangHyeon; Choi, Won Jun

    2016-02-11

    Si-based integrated circuits have been intensively developed over the past several decades through ultimate device scaling. However, the Si technology has reached the physical limitations of the scaling. These limitations have fuelled the search for alternative active materials (for transistors) and the introduction of optical interconnects (called "Si photonics"). A series of attempts to circumvent the Si technology limits are based on the use of III-V compound semiconductor due to their superior benefits, such as high electron mobility and direct bandgap. To use their physical properties on a Si platform, the formation of high-quality III-V films on the Si (III-V/Si) is the basic technology ; however, implementing this technology using a high-throughput process is not easy. Here, we report new concepts for an ultra-high-throughput heterogeneous integration of high-quality III-V films on the Si using the wafer bonding and epitaxial lift off (ELO) technique. We describe the ultra-fast ELO and also the re-use of the III-V donor wafer after III-V/Si formation. These approaches provide an ultra-high-throughput fabrication of III-V/Si substrates with a high-quality film, which leads to a dramatic cost reduction. As proof-of-concept devices, this paper demonstrates GaAs-based high electron mobility transistors (HEMTs), solar cells, and hetero-junction phototransistors on Si substrates.

  17. Quantum transport in III-V-semiconductor nanocolumns; Quantentransport in III-V-Halbleiternanosaeulen

    Energy Technology Data Exchange (ETDEWEB)

    Wensorra, Jakob

    2009-03-20

    The goal of this work has been to investigate und understand the electronic transport properties of vertical GaAs/AlAs nanocolumn resonant tunneling diodes (RTDs) and field effect transistors (RTTs) as well as of vertical InAs nanocolumn phase interference diodes. Besides the fabrication and electrical characterization of the devices, numerical calculations, simulations and quantum transport models represent the second important part of the work. GaAs/AlAs and InAs nanocolumns with lateral dimensions down to 30 nm have been processed by top-down approach. Room temperature DC electrical measurements on the nano-RTDs show a distinct negative differential resistance in the I-V characteristics for devices down to 30 nm lateral dimension. The miniaturization of the RTDs leads to the degradation of the transport properties, especially of the peak to valley current ratio (PVR), due to the increased surface scattering. Apart from the main current peak, new substructures can be observed in the I-V characteristics. These are shoulder like features for columns with diameters between 80 nm and 100 nm but become clear peaks when the column diameters are in the 55-75 nm range. For sub-65 nm column lateral dimensions, a strong increase of the PVR and a sharp single peak is observed. A local maximum of the PVR of 3 is reached for columns with 50 nm diameter. The sub-40 nm devices show only space charge limited currents in the I-V characteristics. This behavior can be shifted to smaller or larger diameters by increasing or reduction of the channel doping. For the smallest nanocolumns the lateral quantum confinement, caused by the low dimensionality of the system, leads to the formation of a 3D quantum-point-contact (QPC) in front of the DBQW structure. The quantization in this QPC depends on the column diameter and for a 50 nm column it exceeds the room temperature thermal broadening of the Fermi distribution function of about 25 meV. The measurements of the nano-RTTs indicate a good control of the device current by the gate voltage, without gate leakage. The peak current swing factor (the ratio between peak currents corresponding to the limits of a certain interval of the gate voltage) is about 3 for 150 nm diameter nano-RTTs but reach 6 for 60 nm diameter nano-RTTs (functionality based on the quantum collimation effect). Apart from GaAs/AlAs nanocolumns, InAs nanocolumns have been investigated as well. Nano-diodes were characterized by DC room temperature measurements and low temperature magneto-transport measurements. At room temperature, a linear behavior is observed in the I-V characteristics. Periodic oscillations of the resistance were measured by varying magnetic field at low temperatures. (orig.)

  18. Ⅲ-V族三元化合物半导体材料分子束外延的生长热力学%Thermodynamic analysis of growth of ternary III-V semiconductor materials by molecular-beam epitaxy

    Institute of Scientific and Technical Information of China (English)

    叶志成; 舒永春; 曹雪; 龚亮; 皮彪; 姚江宏; 邢晓东; 许京军

    2011-01-01

    Thermodynamic models for molecular-beam epitaxy (MBE) growth of ternary Ⅲ-V semiconductor materials are proposed. These models are in agreement with our experimental materials InGaP/GaAs and InGaAs/InP, and reported GaAsP/GaAs and InAsP/InP in thermodynamic growth. The lattice strain energy ΔG and thermal decomposition sensitive to growth temperature are demonstrated in the models simultaneously. ΔG is the function of the alloy composition, which is affected by flux ratio and growth temperature directly. The calculation results reveal that flux ratio and growth temperature mainly influence the growth process. Thermodynamic model of quaternary InGaAsP/GaAs semiconductor material is discussed also.%建立Ⅲ-V族三元化合物半导体材料的分子束外延生长热力学模型.该模型与实验材料InGaP/GaAs, InGaAs/InP 及已发表的GaAsP/GaAs, InAsP/InP 的数据吻合得很好.将晶格应变能ΔG及脱附对温度敏感这两个因素同时纳入热力学模型中,束流和生长温度直接影响合金组分,晶格应变能是合金组分的函数.热力学模型计算结果反映了束流和生长温度是生长过程中最主要的影响因素.讨论和分析了四元半导体材料InGaAsP/GaAs的热力学生长模型.

  19. Fabrication of LEDs based on III-V nitrides and their applications

    Energy Technology Data Exchange (ETDEWEB)

    Shibata, N. [Optoelectronics Technical Division, Toyoda Gosei Co., Ltd., 710 Origuchi, Shimomiyake heiwa-cho, Nakashima-gun, Aichi 490-1312 (Japan)

    2002-08-16

    III-V nitride semiconductors are useful for LEDs with colors ranging from ultraviolet, blue to green. The luminescence of these LEDs shows a high luminosity and a high purity of color, and, therefore, many applications have been realized using these LEDs. (Abstract Copyright[2002], Wiley Periodicals, Inc.)

  20. Integration, gap formation, and sharpening of III-V heterostructure nanowires by selective etching

    DEFF Research Database (Denmark)

    Kallesoe, C.; Mølhave, Kristian; Larsen, K. F.

    2010-01-01

    Epitaxial growth of heterostructure nanowires allows for the definition of narrow sections with specific semiconductor composition. The authors demonstrate how postgrowth engineering of III-V heterostructure nanowires using selective etching can form gaps, sharpening of tips, and thin sections si...

  1. Sulfur passivation techniques for III-V wafer bonding

    Science.gov (United States)

    Jackson, Michael James

    The use of direct wafer bonding in a multijunction III-V solar cell structure requires the formation of a low resistance bonded interface with minimal thermal treatment. A wafer bonded interface behaves as two independent surfaces in close proximity, hence a major source of resistance is Fermi level pinning common in III-V surfaces. This study demonstrates the use of sulfur passivation in III-V wafer bonding to reduce the energy barrier at the interface. Two different sulfur passivation processes are addressed. A dry sulfur passivation method that utilizes elemental sulfur vapor activated by ultraviolet light in vacuum is compared with aqueous sulfide and native oxide etch treatments. Through the addition of a sulfur desorption step in vacuum, the UV-S treatment achieves bondable surfaces free of particles contamination or surface roughening. X-ray photoelectron spectroscopy measurements of the sulfur treated GaAs surfaces find lower levels of oxide and the appearance of sulfide species. After 4 hrs of air exposure, the UV-S treated GaAs actually showed an increase in the amount of sulfide bonded to the semiconductor, resulting in less oxidation compared to the aqueous sulfide treatment. Large area bonding is achieved for sulfur treated GaAs / GaAs and InP / InP with bulk fracture strength achieved after annealing at 400 °C and 300 °C respectively, without large compressive forces. The electrical conductivity across a sulfur treated 400 °C bonded n-GaAs/n-GaAs interface significantly increased with a short anneal (1-2 minutes) at elevated temperatures (50--600 °C). Interfaces treated with the NH4OH oxide etch, on the other hand, exhibited only mild improvement in accordance with previously published studies in this area. TEM and STEM images revealed similar interfacial microstructure changes with annealing for both sulfur treated and NH4OH interfaces, whereby some areas have direct semiconductor-semiconductor contact without any interfacial layer. Fitting the

  2. Vertical group III-V nanowires on si, heterostructures, flexible arrays and fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Deli; Soci, Cesare; Bao, Xinyu; Wei, Wei; Jing, Yi; Sun, Ke

    2015-01-13

    Embodiments of the invention provide a method for direct heteroepitaxial growth of vertical III-V semiconductor nanowires on a silicon substrate. The silicon substrate is etched to substantially completely remove native oxide. It is promptly placed in a reaction chamber. The substrate is heated and maintained at a growth temperature. Group III-V precursors are flowed for a growth time. Preferred embodiment vertical Group III-V nanowires on silicon have a core-shell structure, which provides a radial homojunction or heterojunction. A doped nanowire core is surrounded by a shell with complementary doping. Such can provide high optical absorption due to the long optical path in the axial direction of the vertical nanowires, while reducing considerably the distance over which carriers must diffuse before being collected in the radial direction. Alloy composition can also be varied. Radial and axial homojunctions and heterojunctions can be realized. Embodiments provide for flexible Group III-V nanowire structures. An array of Group III-V nanowire structures is embedded in polymer. A fabrication method forms the vertical nanowires on a substrate, e.g., a silicon substrate. Preferably, the nanowires are formed by the preferred methods for fabrication of Group III-V nanowires on silicon. Devices can be formed with core/shell and core/multi-shell nanowires and the devices are released from the substrate upon which the nanowires were formed to create a flexible structure that includes an array of vertical nanowires embedded in polymer.

  3. Vertical group III-V nanowires on si, heterostructures, flexible arrays and fabrication

    Science.gov (United States)

    Wang, Deli; Soci, Cesare; Bao, Xinyu; Wei, Wei; Jing, Yi; Sun, Ke

    2015-01-13

    Embodiments of the invention provide a method for direct heteroepitaxial growth of vertical III-V semiconductor nanowires on a silicon substrate. The silicon substrate is etched to substantially completely remove native oxide. It is promptly placed in a reaction chamber. The substrate is heated and maintained at a growth temperature. Group III-V precursors are flowed for a growth time. Preferred embodiment vertical Group III-V nanowires on silicon have a core-shell structure, which provides a radial homojunction or heterojunction. A doped nanowire core is surrounded by a shell with complementary doping. Such can provide high optical absorption due to the long optical path in the axial direction of the vertical nanowires, while reducing considerably the distance over which carriers must diffuse before being collected in the radial direction. Alloy composition can also be varied. Radial and axial homojunctions and heterojunctions can be realized. Embodiments provide for flexible Group III-V nanowire structures. An array of Group III-V nanowire structures is embedded in polymer. A fabrication method forms the vertical nanowires on a substrate, e.g., a silicon substrate. Preferably, the nanowires are formed by the preferred methods for fabrication of Group III-V nanowires on silicon. Devices can be formed with core/shell and core/multi-shell nanowires and the devices are released from the substrate upon which the nanowires were formed to create a flexible structure that includes an array of vertical nanowires embedded in polymer.

  4. Fast optical in situ spectroscopy in III-V MOVPE

    Energy Technology Data Exchange (ETDEWEB)

    Kaspari, C.

    2007-09-29

    This work describes the application of optical in situ measurement techniques (reflectance anisotropy spectroscopy, RAS, and spectroscopic ellipsometry, SE) to processes that are important for the growth of III-V semiconductors like GaAs, InP, InAs and GaP in metal-organic vapour phase epitaxy (MOVPE). Special emphasis is placed on the determination of the free carrier concentration (doping level) and the study of the thermal desorption properties of III-V oxides. A large part of this work is concerned with the development and the construction of a multichannel RAS setup that allows the recording of RAS spectra within fractions of a second. On the basis of benchmark measurements it was shown that the spectral resolution is sufficiently accurate for application in epitaxy. To demonstrate the recording of spectra with high temporal resolution, RAS monolayer oscillations during growth of GaAs were studied and it was shown that the surface changes periodically between a relatively smooth morphology with adsorbed methyl groups (type III) and a stepped, gallium-rich surface (type II). Furthermore the non-reversible process of growing InAs quantum dots on GaAs was studied. It was shown that the multichannel RAS is capable of detecting the 2D-3D transition as well as the following morphological change of the surface at high temporal resolution. For the measurement of the doping level, the relationship between the doping-induced internal electric field and the anisotropy of the sample was studied. To understand the effect of the so-called doping oscillations, a theoretical model was developed. For the investigation of the thermal desorption of the III-V oxides in MOVPE, a number of test series were realised. It was also found that the formation of the reconstructed surface is finished a considerable time after the SE transient indicates stable conditions (no further reduction of the oxide layer). The activation energy for oxide desorption from InAs, GaAs and InP was

  5. Growth far from equilibrium: Examples from III-V semiconductors

    Science.gov (United States)

    Kuech, Thomas F.; Babcock, Susan E.; Mawst, Luke

    2016-12-01

    The development of new applications has driven the field of materials design and synthesis to investigate materials that are not thermodynamically stable phases. Materials which are not thermodynamically stable can be synthesized and used in many applications. These materials are kinetically stabilized during use. The formation of such metastable materials requires both an understanding of the associated thermochemistry and the key surface transport processes present during growth. Phase separation is most easily accomplished at the growth surface during synthesis where mass transport is most rapid. These surface transport processes are sensitive to the surface stoichiometry, reconstruction, and chemistry as well as the growth temperature. The formation of new metastable semiconducting alloys with compositions deep within a compositional miscibility gap serves as model systems for the understanding of the surface chemical and physical processes controlling their formation. The GaAs1-yBiy system is used here to elucidate the role of surface chemistry in the formation of a homogeneous metastable composition during the chemical vapor deposition of the alloy system.

  6. Ion Implantation in III-V Compound Semiconductors

    Science.gov (United States)

    1984-09-01

    340 keV H + -0 Ga P  O UES-723-292 !:• (H o>ray *P-K X - rayO Ga-K X -ray iii! RBS * ..I -iO.. 0 10I to1. 01 • .0 -. I0 1 LI =i, O I 0 01 0.J 10...Identity by blo ," pume) Ion Implantation, GaAs, Hall effect, electrical resistivity, Rutherford Backscattering (RBS), channeling, Proton induced x -ray...Mebility (jH) upon Aiinealing Temperature (TA) for 1 X 101 /cm• Dose Samples of GaAs:Mg with Three Different Capping Methods 33 p 14 Dependence of Surface

  7. Ion-scattering spectroscopy of III-V semiconductor surfaces

    CERN Document Server

    Kaijaks, N S

    2000-01-01

    data was consistent with a bilayer model based on antiphase Sb dimers. However, MEIS results suggested significant staggering of the surface Sb dimers. Structural parameters for the dimerization of these reconstructions have been determined. Models for the c(6x4) reconstruction were considered, and a closer fit found for a model based on Sb dimer chains with staggered antiphase second layer Sb dimers. A (4x2) reconstruction of the (001) surface of indium arsenide was prepared by AHC and analysed by MEIS, LEED and AES. Three previously proposed models have been compared and evaluated. It was found that a model based on In dimer pairs separated by second layer dimers was relatively inconsistent with the MEIS data recorded. A model based on single In dimers separated by second layer two-dimer chains was consistent with MEIS results, but structural parameters determined were nonphysical. A model without dimerization in the second layer was found to be in best agreement with the experimental results, as well as be...

  8. Nonlinear Frequency Conversion in III-V Semiconductor Photonic Crystals

    Science.gov (United States)

    2012-03-01

    reflection, or destructivity leading to reduced reflection. This principle, known as distributed Bragg reflection ( DBR ), provides a straightforward method for...creating very high reflectivity or low reflectivity mirrors with a geometry that is simple to understand. A one-dimensional DBR , also known as a...between the lattice constants of GaP and Si (0.37% at 300K [135]) is promising for monolithic integration with silicon[135, 136, 137], and the large

  9. Development of the III-V Barrier PhotoDetector Heterostructures for Spectral Range Above 10 microns

    Science.gov (United States)

    2016-02-14

    Transport properties of holes in bulk InAsSb andperformance of barrier long-wavelength infrared detectors, Semiconductor Science and Technology...narrow gap semiconductors grown pseudomorphically on the available substrates. The buffers were developed for InAsSb alloys with Sb compositions in...the lattice constant design constrain in the realization of III-V narrow gap semiconductors grown pseudomorphically on the available substrates. The

  10. Heterointegration of III-V on silicon using a crystalline oxide buffer layer

    Science.gov (United States)

    Bhatnagar, K.; Rojas-Ramirez, J. S.; Contreras-Guerrero, R.; Caro, M.; Droopad, R.

    2015-09-01

    The integration of III-V compound semiconductors with Si can combine the cost advantage and maturity of Si technology with the superior performance of III-V materials. We have achieved the heteroepitaxial growth of III-V compound semiconductors on a crystalline SrTiO3 buffer layer grown on Si(0 0 1) substrates. A two-step growth process utilizing a high temperature nucleation layer of GaAs, followed by a low-temperature GaAs layer at a higher growth rate was employed to achieve highly crystalline thick GaAs layers on the SrTiO3/Si substrates with low surface roughness as seen by AFM. The effect of the GaAs nucleation layer on different surface terminations for the SrTiO3 layer was studied for both on axis and miscut wafers, which led to the conclusion that the Sr terminated surface on miscut substrates provides the best GaAs films. Using GaAs/STO/Si as virtual substrates, we have optimized the growth of high quality GaSb using the interfacial misfit (IMF) dislocation array technique. This work can lead to the possibility of realizing infrared detectors and next-generation high mobility III-V CMOS within the existing Si substrate infrastructure.

  11. Dopant Profiling of III-V Nanostructures for Electronic Applications

    Science.gov (United States)

    Ford, Alexandra Caroline

    2011-12-01

    High electron mobility III-V compound semiconductors such as indium arsenide (InAs) are promising candidates for future active channel materials of electron devices to further enhance device performance. In particular, compound semiconductors heterogeneously integrated on Si substrates have been studied, combining the high mobility of III-V semiconductors and the well-established, low cost processing of Si technology. However, one of the primary challenges of III-V device fabrication is controllable, post-growth dopant profiling. Here InAs nanowires and ultrathin layers (nanoribbons) on SiO2/Si are investigated as the channel material for high performance field-effect transistors (FETs) and post-growth, patterned doping techniques are demonstrated. First, the synthesis of crystalline InAs nanowires with high yield and tunable diameters by using Ni nanoparticles as the catalyst material on SiO 2/Si substrates is demonstrated. The back-gated InAs nanowire FETs have electron field-effect mobilities of ˜4,000 cm2/Vs and ION/IOFF ˜104. The uniformity of the InAs nanowires is demonstrated by large-scale assembly of parallel arrays of nanowires (˜400 nanowires) on SiO2/Si substrates by a contact printing process. This enables high performance, "printable" transistors with 5--10 mA ON currents. Second, an epitaxial transfer method for the integration of ultrathin layers of single-crystalline InAs on SiO2/Si substrates is demonstrated. As a parallel to silicon-on-insulator (SOI) technology, the abbreviation "XOI" is used to represent this compound semiconductor-on-insulator platform. A high quality InAs/dielectric interface is obtained by the use of a thermally grown interfacial InAsOx layer (˜1 nm thick). Top-gated FETs exhibit a peak transconductance of ˜1.6 mS/microm at V DS=0.5V with ION/I OFF >104 and subthreshold swings of 107--150 mV/decade for a channel length of ˜0.5 microm. Next, temperature-dependent I-V and C-V studies of single InAs nanowire FETs are

  12. Power-efficient III-V/silicon external cavity DBR lasers.

    Science.gov (United States)

    Zilkie, A J; Seddighian, P; Bijlani, B J; Qian, W; Lee, D C; Fathololoumi, S; Fong, J; Shafiiha, R; Feng, D; Luff, B J; Zheng, X; Cunningham, J E; Krishnamoorthy, A V; Asghari, M

    2012-10-08

    We report the design and characterization of external-cavity DBR lasers built with a III-V-semiconductor reflective-SOA with spot-size converter edge-coupled to SOI waveguides containing Bragg grating mirrors. The un-cooled lasers have wall-plug-efficiencies of up to 9.5% at powers of 6 mW. The lasers are suitable for making power efficient, hybrid WDM transmitters in a CMOS-compatible SOI optical platform.

  13. Top-down Fabrication Technologies for High Quality III-V Nanostructures

    OpenAIRE

    2013-01-01

    III-V nanostructures have attracted substantial research effort due to their interesting physical properties and their applications in new generation of ultrafast and high efficiency nanoscale electronic and photonic components. The advances in nanofabrication methods including growth/synthesis have opened up new possibilities of realizing one dimensional (1D) nanostructures as building blocks of future nanoscale devices. For processing of semiconductor nanostructure devices, simplicity, cost...

  14. High frequency III-V nanowire MOSFETs

    Science.gov (United States)

    Lind, Erik

    2016-09-01

    III-V nanowire transistors are promising candidates for very high frequency electronics applications. The improved electrostatics originating from the gate-all-around geometry allow for more aggressive scaling as compared with planar field-effect transistors, and this can lead to device operation at very high frequencies. The very high mobility possible with In-rich devices can allow very high device performance at low operating voltages. GaN nanowires can take advantage of the large band gap for high voltage operation. In this paper, we review the basic physics and device performance of nanowire field- effect transistors relevant for high frequency performance. First, the geometry of lateral and vertical nanowire field-effect transistors is introduced, with special emphasis on the parasitic capacitances important for nanowire geometries. The basic important high frequency transistor metrics are introduced. Secondly, the scaling properties of gate-all-around nanowire transistors are introduced, based on geometric length scales, demonstrating the scaling possibilities of nanowire transistors. Thirdly, to model nanowire transistor performance, a two-band non-parabolic ballistic transistor model is used to efficiently calculate the current and transconductance as a function of band gap and nanowire size. The intrinsic RF metrics are also estimated. Finally, experimental state-of-the-art nanowire field-effect transistors are reviewed and benchmarked, lateral and vertical transistor geometries are explored, and different fabrication routes are highlighted. Lateral devices have demonstrated operation up to 350 GHz, and vertical devices up to 155 GHz.

  15. Surface Leakage Mechanisms in III-V Infrared Barrier Detectors

    Science.gov (United States)

    Sidor, D. E.; Savich, G. R.; Wicks, G. W.

    2016-09-01

    Infrared detector epitaxial structures employing unipolar barriers exhibit greatly reduced dark currents compared to simple pn-based structures. When correctly positioned within the structure, unipolar barriers are highly effective at blocking bulk dark current mechanisms. Unipolar barriers are also effective at suppressing surface leakage current in infrared detector structures employing absorbing layers that possess the same conductivity type in their bulk and at their surface. When an absorbing layer possesses opposite conductivity types in its bulk and at its surface, unipolar barriers are not solutions to surface leakage. This work reviews empirically determined surface band alignments of III-V semiconductor compounds and modeled surface band alignments of both gallium-free and gallium-containing type-II strained layer superlattice material systems. Surface band alignments are used to predict surface conductivity types in several detector structures, and the relationship between surface and bulk conductivity types in the absorbing layers of these structures is used as the basis for explaining observed surface leakage characteristics.

  16. Antimony Based III-V Thermophotovoltaic Devices

    Energy Technology Data Exchange (ETDEWEB)

    CA Wang

    2004-06-09

    Antimony-based III-V thermophotovoltaic (TPV) cells are attractive converters for systems with low radiator temperature around 1100 to 1700 K, since these cells potentially can be spectrally matched to the thermal source. Cells under development include GaSb and the lattice-matched GaInAsSb/GaSb and InPAsSb/InAs quaternary systems. GaSb cell technology is the most mature, owing in part to the relative ease in preparation of the binary alloy compared to quaternary GaInAsSb and InPAsSb alloys. Device performance of 0.7-eV GaSb cells exceeds 90% of the practical limit. GaInAsSb TPV cells have been the primary focus of recent research, and cells with energy gap E{sub g} ranging from {approx}0.6 to 0.49 eV have been demonstrated. Quantum efficiency and fill factor approach theoretical limits. Open-circuit voltage factor is as high as 87% of the practical limit for the higher-E{sub g} cells, but degrades to below 80% with decreasing E{sub g} of the alloy, which might be due to Auger recombination. InPAsSb cells are the least studied, and a cell with E{sub g} = 0.45-eV has extended spectral response out to 4.3 {micro}m. This paper briefly reviews the main contributions that have been made for antimonide-based TPV cells, and suggests additional studies for further performance enhancements.

  17. Transferable tight binding model for strained group IV and III-V heterostructures

    Science.gov (United States)

    Tan, Yaohua; Povolotskyi, Micheal; Kubis, Tillmann; Boykin, Timothy; Klimeck, Gerhard

    Modern semiconductor devices have reached critical device dimensions in the range of several nanometers. For reliable prediction of device performance, it is critical to have a numerical efficient model that are transferable to material interfaces. In this work, we present an empirical tight binding (ETB) model with transferable parameters for strained IV and III-V group semiconductors. The ETB model is numerically highly efficient as it make use of an orthogonal sp3d5s* basis set with nearest neighbor inter-atomic interactions. The ETB parameters are generated from HSE06 hybrid functional calculations. Band structures of strained group IV and III-V materials by ETB model are in good agreement with corresponding HSE06 calculations. Furthermore, the ETB model is applied to strained superlattices which consist of group IV and III-V elements. The ETB model turns out to be transferable to nano-scale hetero-structure. The ETB band structures agree with the corresponding HSE06 results in the whole Brillouin zone. The ETB band gaps of superlattices with common cations or common anions have discrepancies within 0.05eV.

  18. Handbook of spintronic semiconductors

    CERN Document Server

    Chen, Weimin

    2010-01-01

    Offers a review of the field of spintronic semiconductors. This book covers a range of topics, including growth and basic physical properties of diluted magnetic semiconductors based on II-VI, III-V and IV semiconductors, developments in theory and experimental techniques and potential device applications.

  19. Cr-doped III-V nitrides: Potential candidates for spintronics

    KAUST Repository

    Amin, Bin

    2011-02-19

    Studies of Cr-doped III-V nitrides, dilute magnetic alloys in the zincblende crystal structure, are presented. The objective of the work is to investigate half-metallicity in Al 0.75Cr 0.25N, Ga 0.75Cr 0.25N, and In 0.75Cr 0.25N for their possible application in spin-based electronic devices. The calculated spin-polarized band structures, electronic properties, and magnetic properties of these compounds reveal that Al 0.75Cr 0.25N and Ga 0.75Cr 0.25N are half-metallic dilute magnetic semiconductors while In 0.75Cr 0.25N is metallic in nature. The present theoretical predictions provide evidence that some Cr-doped III-V nitrides can be used in spintronics devices. © 2011 TMS.

  20. Progress Towards III-V Photovoltaics on Flexible Substrates

    Science.gov (United States)

    McNatt, Jeremiah S.; Pal, AnnaMaria T.; Clark, Eric B.; Sayir, Ali; Raffaelle, Ryne P.; Bailey, Christopher G.; Hubbard, Seth M.; Maurer, William F.; Fritzemeier, Les

    2008-01-01

    Presented here is the recent progress of the NASA Glenn Research Center OMVPE group's efforts in the development of high efficiency thin-film polycrystalline III-V photovoltaics on optimum substrates. By using bulk polycrystalline germanium (Ge) films, devices of high efficiency and low mass will be developed and incorporated onto low-cost flexible substrates. Our progress towards the integration of high efficiency polycrystalline III-V devices and recrystallized Ge films on thin metal foils is discussed.

  1. Heralded single-photon source in a III-V photonic crystal.

    Science.gov (United States)

    Clark, Alex S; Husko, Chad; Collins, Matthew J; Lehoucq, Gaelle; Xavier, Stéphane; De Rossi, Alfredo; Combrié, Sylvain; Xiong, Chunle; Eggleton, Benjamin J

    2013-03-01

    In this Letter we demonstrate heralded single-photon generation in a III-V semiconductor photonic crystal platform through spontaneous four-wave mixing. We achieve a high brightness of 3.4×10(7) pairs·s(-1) nm(-1) W(-1) facilitated through dispersion engineering and the suppression of two-photon absorption in the gallium indium phosphide material. Photon pairs are generated with a coincidence-to-accidental ratio over 60 and a low g(2) (0) of 0.06 proving nonclassical operation in the single photon regime.

  2. III-V/silicon photonic integrated circuits for communication and sensing applications

    Science.gov (United States)

    Roelkens, Gunther; Keyvaninia, Shahram; Stankovic, Stevan; De Koninck, Yannick; Tassaert, Martijn; Mechet, Pauline; Spuesens, Thijs; Hattasan, N.; Gassenq, A.; Muneeb, M.; Ryckeboer, E.; Ghosh, Samir; Van Thourhout, D.; Baets, R.

    2013-03-01

    In this paper we review our work in the field of heterogeneous integration of III-V semiconductors and non-reciprocal optical materials on a silicon waveguide circuit. We elaborate on the heterogeneous integration technology based on adhesive DVS-BCB die-to-wafer bonding and discuss several device demonstrations. The presented devices are envisioned to be used in photonic integrated circuits for communication applications (telecommunications and optical interconnects) as well as in spectroscopic sensing systems operating in the short-wave infrared wavelength range.

  3. Research progress of III-V laser bonding to Si

    Science.gov (United States)

    Bo, Ren; Yan, Hou; Yanan, Liang

    2016-12-01

    The vigorous development of silicon photonics makes a silicon-based light source essential for optoelectronics' integration. Bonding of III-V/Si hybrid laser has developed rapidly in the last ten years. In the tireless efforts of researchers, we are privileged to see these bonding methods, such as direct bonding, medium adhesive bonding and low temperature eutectic bonding. They have been developed and applied to the research and fabrication of III-V/Si hybrid lasers. Some research groups have made remarkable progress. Tanabe Katsuaki of Tokyo University successfully implemented a silicon-based InAs/GaAs quantum dot laser with direct bonding method in 2012. They have bonded the InAs/GaAs quantum dot laser to the silicon substrate and the silicon ridge waveguide, respectively. The threshold current of the device is as low as 200 A/cm2. Stevan Stanković and Sui Shaoshuai successfully produced a variety of hybrid III-V/Si laser with the method of BCB bonding, respectively. BCB has high light transmittance and it can provide high bonding strength. Researchers of Tokyo University and Peking University have realized III-V/Si hybrid lasers with metal bonding method. We describe the progress in the fabrication of III-V/Si hybrid lasers with bonding methods by various research groups in recent years. The advantages and disadvantages of these methods are presented. We also introduce the progress of the growth of III-V epitaxial layer on silicon substrate, which is also a promising method to realize silicon-based light source. I hope that readers can have a general understanding of this field from this article and we can attract more researchers to focus on the study in this field.

  4. Hybrid III-V/SOI Resonant Cavity Photodetector

    DEFF Research Database (Denmark)

    Learkthanakhachon, Supannee; Taghizadeh, Alireza; Park, Gyeong Cheol;

    2016-01-01

    A hybrid III-V/SOI resonant cavity photo detector has been demonstrated, which comprises an InP grating reflectorand a Si grating reflector. It can selectively detects an incident light with 1.54-µm wavelength and TM polarization....

  5. Method of passivating semiconductor surfaces

    Science.gov (United States)

    Wanlass, Mark W.

    1990-01-01

    A method of passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

  6. Improved adhesion of photoresist to III-V substrates using PECVD carbon films

    Science.gov (United States)

    Mancini, David P.; Smith, Steven M.; Hooper, Andrew F.; Talin, A.; Chang, Daniel; Resnick, Douglas J.; Voight, Steven A.

    2002-07-01

    Amorphous PECVD carbon films have been investigated as a means to prepare III-V compound semiconductor substrates for improved photoresist adhesion. Results show that significant improvements in adhesive durability of patterned photoresist occurred for carbon primed GaAs and InGaAs wafers used in conjunction with both i-line and DUV lithography processes. These carbon layers, were 50-100 Angstrom in thickness, and varied in composition and morphology from a nitrogen-doped, diamond-like material (DLC), to a more hydrogen rich, polymer-like material (PLC). Adhesion durability tests performed in baths of ammonium hydroxide (NH4OH) and hydrochloric acid (HCl) in general showed superior performance compared to non-primed substrates. The sole exception was a failure of PLC priming on GaAs wafers used with a DUV anti-reflective coating. This same system, however, was shown to work extremely well when a DLC coating was substituted. Characterization of PLC and DLC films included use of AES, XPS, FTIR, AFM, and contact angle analysis. Results indicate that carbon films passivate III-V oxides, creating a stable, hydrophobic surface. This factor is proposed as a key reason for the improved resistance to aggressive aqueous environments. AFM results show that carbon films are extremely smooth and actually decrease surface roughness, indicating that mechanical adhesion is unlikely.

  7. Pre-patterned silicon substrates for the growth of III-V nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Benyoucef, M.; Usman, M.; Alzoubi, T.; Reithmaier, J.P. [Institute of Nanostructure Technologies and Analytics (INA), CINSaT, University of Kassel, Heinrich-Plett-Strasse 40, 34132 Kassel (Germany)

    2012-12-15

    This paper reviews the recent progresses obtained by direct growth of III-V semiconductor quantum dots (QDs) on pre-patterned and flat silicon substrates. This combination allows us to study in detail the growth mechanisms of III-V materials on silicon substrates. For the flat surfaces, we concentrate on basic growth studies addressing mainly morphological properties of QD-like structures with a main emphasis on surface preparation and growth parameters. For the pre-patterned substrates, we report the optimization of electron beam lithography and dry etching processes to fabricate sub-100 nm holes in pre-patterned Si (100) substrates with controlled size, shape, and periodicity. The pre-patterned silicon substrates underwent thorough ex situ chemical and in situ cleaning processes before the molecular beam epitaxy (MBE) growth. Finally, the MBE growth sequence of QDs on patterned silicon surface has shown highly selective formation of localized dome like nanostructures in patterned holes with 1 {mu}m period. A 3D AFM image of a single nanohole in silicon substrate with diameter and depth of about 70 nm. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  8. Method of fabricating vertically aligned group III-V nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Wang, George T; Li, Qiming

    2014-11-25

    A top-down method of fabricating vertically aligned Group III-V micro- and nanowires uses a two-step etch process that adds a selective anisotropic wet etch after an initial plasma etch to remove the dry etch damage while enabling micro/nanowires with straight and smooth faceted sidewalls and controllable diameters independent of pitch. The method enables the fabrication of nanowire lasers, LEDs, and solar cells.

  9. Physics, fabrication and characterization of III-V multi-gate FETs for low power electronics

    Science.gov (United States)

    Thathachary, Arun V.

    With transistor technology close to its limits for power constrained scaling and the simultaneous emergence of mobile devices as the dominant driver for new scaling, a pathway to significant reduction in transistor operating voltage to 0.5V or lower is urgently sought. This however implies a fundamental paradigm shift away from mature Silicon technology. III-V compound semiconductors hold great promise in this regard due to their vastly superior electron transport properties making them prime candidates to replace Silicon in the n-channel transistor. Among the plethora of binary and ternary compounds available in the III-V space, InxGa1-xAs alloys have attracted significant interest due to their excellent electron mobility, ideally placed bandgap and mature growth technology. Simultaneously, electrostatic control mandates multigate transistor designs such as the FinFET at extremely scaled nodes. This dissertation describes the experimental realization of III-V FinFETs incorporating InXGa1-XAs heterostructure channels for high performance, low power logic applications. The chapters that follow present experimental demonstrations, simulations and analysis on the following aspects (a) motivation and key figures of merit driving material selection and design; (b) dielectric integration schemes for high-k metal-gate stack (HKMG) realization on InXGa 1-XAs, including surface clean and passivation techniques developed for high quality interfaces; (c) novel techniques for transport (mobility) characterization in nanoscale multi-gate FET architectures with experimental demonstration on In0.7Ga0.3As nanowires; (d) Indium composition and quantum confined channel design for InXGa 1-XAs FinFETs and (e) InAs heterostructure designs for high performance FinFETs. Each chapter also contains detailed benchmarking of results against state of the art demonstrations in Silicon and III-V material systems. The dissertation concludes by assessing the feasibility of InXGa 1-XAs Fin

  10. Modeling of the electrical carrier transport in III-V on silicon tandem solar cell structures

    Science.gov (United States)

    Maiti, T. K.; Cheong, Dan; Yang, Jingfeng; Kleiman, R. N.

    2011-08-01

    The electrical carrier transport of a tandem cell structure was evaluated by investigating the band alignment of and carrier transport through a tunnel junction. The modeling structure of a tandem cell consists of a III-V (or II-VI) top cell layer, a Si bottom cell layer and tunnel junction layers in-between which connect the top and the bottom cells. The values of energy bandgap and electron affinity of each layer were varied to investigate their effect on the energy barrier height at the interface between Si and compound semiconductors of interest. The contour plots of barrier heights for majority and minority carriers at the hetero-interface are used as a starting point to define the successful regions for electrical carrier transport through the tunnel junctions.

  11. New III-V cell design approaches for very high efficiency

    Energy Technology Data Exchange (ETDEWEB)

    Lundstrom, M.S.; Melloch, M.R.; Lush, G.B.; Patkar, M.P.; Young, M.P. (Purdue Univ., Lafayette, IN (United States))

    1993-04-01

    This report describes to examine new solar cell desip approaches for achieving very high conversion efficiencies. The program consists of two elements. The first centers on exploring new thin-film approaches specifically designed for M-III semiconductors. Substantial efficiency gains may be possible by employing light trapping techniques to confine the incident photons, as well as the photons emitted by radiative recombination. The thin-film approach is a promising route for achieving substantial performance improvements in the already high-efficiency, single-junction, III-V cell. The second element of the research involves exploring desip approaches for achieving high conversion efficiencies without requiring extremely high-quality material. This work has applications to multiple-junction cells, for which the selection of a component cell often involves a compromise between optimum band pp and optimum material quality. It could also be a benefit manufacturing environment by making the cell's efficiency less dependent on materialquality.

  12. Efficient, tunable flip-chip-integrated III-V/Si hybrid external-cavity laser array.

    Science.gov (United States)

    Lin, Shiyun; Zheng, Xuezhe; Yao, Jin; Djordjevic, Stevan S; Cunningham, John E; Lee, Jin-Hyoung; Shubin, Ivan; Luo, Ying; Bovington, Jock; Lee, Daniel Y; Thacker, Hiren D; Raj, Kannan; Krishnamoorthy, Ashok V

    2016-09-19

    We demonstrate a surface-normal coupled tunable hybrid silicon laser array for the first time using passively-aligned, high-accuracy flip chip bonding. A 2x6 III-V reflective semiconductor optical amplifier (RSOA) array with integrated total internal reflection mirrors is bonded to a CMOS SOI chip with grating couplers and silicon ring reflectors to form a tunable hybrid external-cavity laser array. Waveguide-coupled wall plug efficiency (wcWPE) of 2% and output power of 3 mW has been achieved for all 12 lasers. We further improved the performance by reducing the thickness of metal/dielectric stacks and achieved 10mW output power and 5% wcWPE with the same integration techniques. This non-invasive, one-step back end of the line (BEOL) integration approach provides a promising solution to high density laser sources for future large-scale photonic integrated circuits.

  13. Design High-Efficiency III-V Nanowire/Si Two-Junction Solar Cell

    Science.gov (United States)

    Wang, Y.; Zhang, Y.; Zhang, D.; He, S.; Li, X.

    2015-06-01

    In this paper, we report the electrical simulation results of a proposed GaInP nanowire (NW)/Si two-junction solar cell. The NW physical dimensions are determined for optimized solar energy absorption and current matching between each subcell. Two key factors (minority carrier lifetime, surface recombination velocity) affecting power conversion efficiency (PCE) of the solar cell are highlighted, and a practical guideline to design high-efficiency two-junction solar cell is thus provided. Considering the practical surface and bulk defects in GaInP semiconductor, a promising PCE of 27.5 % can be obtained. The results depict the usefulness of integrating NWs to construct high-efficiency multi-junction III-V solar cells.

  14. III-V alloy heterostructure high speed avalanche photodiodes

    Science.gov (United States)

    Law, H. D.; Nakano, K.; Tomasetta, L. R.

    1979-01-01

    Heterostructure avalanche photodiodes have been successfully fabricated in several III-V alloy systems: GaAlAs/GaAs, GaAlSb/GaAlSb, and InGaAsP/InP. These diodes cover optical wavelengths from 0.4 to 1.8 micron. Early stages of development show very encouraging results. High speed response of less than 35 ps and high quantum efficiency more than 95 percent have been obtained. The dark currents and the excess avalanche noise are also dicussed. A direct comparison of GaAlSb, GaAlAsSb, and In GaAsP avalanche photodiodes is given.

  15. III-V Growth on Silicon Toward a Multijunction Cell

    Energy Technology Data Exchange (ETDEWEB)

    Geisz, J.; Olson, J.; McMahon, W.; Friedman, D.; Kibbler, A.; Kramer, C.; Young, M.; Duda, A.; Ward, S.; Ptak, A.; Kurtz, S.; Wanlass, M.; Ahrenkiel, P.; Jiang, C. S.; Moutinho, H.; Norman, A.; Jones, K.; Romero, M.; Reedy, B.

    2005-11-01

    A III-V on Si multijunction solar cell promises high efficiency at relatively low cost. The challenges to epitaxial growth of high-quality III-Vs on Si, though, are extensive. Lattice-matched (LM) dilute-nitride GaNPAs solar cells have been grown on Si, but their performance is limited by defects related to the nitrogen. Advances in the growth of lattice-mismatched (LMM) materials make more traditional III-Vs, such as GaInP and GaAsP, very attractive for use in multijunction solar cells on silicon.

  16. Final Report: Vapor Transport Deposition for Thin Film III-V Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Boettcher, Shannon [Univ. of Oregon, Eugene, OR (United States); Greenaway, Ann [Univ. of Oregon, Eugene, OR (United States); Boucher, Jason [Univ. of Oregon, Eugene, OR (United States); Aloni, Shaul [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

    2016-02-10

    Silicon, the dominant photovoltaic (PV) technology, is reaching its fundamental performance limits as a single absorber/junction technology. Higher efficiency devices are needed to reduce cost further because the balance of systems account for about two-thirds of the overall cost of the solar electricity. III-V semiconductors such as GaAs are used to make the highest-efficiency photovoltaic devices, but the costs of manufacture are much too high for non-concentrated terrestrial applications. The cost of III-V’s is driven by two factors: (1) metal-organic chemical vapor deposition (MOCVD), the dominant growth technology, employs expensive, toxic and pyrophoric gas-phase precursors, and (2) the growth substrates conventionally required for high-performance devices are monocrystalline III-V wafers. The primary goal of this project was to show that close-spaced vapor transport (CSVT), using water vapor as a transport agent, is a scalable deposition technology for growing low-cost epitaxial III-V photovoltaic devices. The secondary goal was to integrate those devices on Si substrates for high-efficiency tandem applications using interface nanopatterning to address the lattice mismatch. In the first task, we developed a CSVT process that used only safe solid-source powder precursors to grow epitaxial GaAs with controlled n and p doping and mobilities/lifetimes similar to that obtainable via MOCVD. Using photoelectrochemical characterization, we showed that the best material had near unity internal quantum efficiency for carrier collection and minority carrier diffusions lengths in of ~ 8 μm, suitable for PV devices with >25% efficiency. In the second task we developed the first pn junction photovoltaics using CSVT and showed unpassivated structures with open circuit photovoltages > 915 mV and internal quantum efficiencies >0.9. We also characterized morphological and electrical defects and identified routes to reduce those defects. In task three we grew epitaxial

  17. III-V-on-silicon multi-frequency lasers.

    Science.gov (United States)

    Keyvaninia, S; Verstuyft, S; Pathak, S; Lelarge, F; Duan, G-H; Bordel, D; Fedeli, J-M; De Vries, T; Smalbrugge, B; Geluk, E J; Bolk, J; Smit, M; Roelkens, G; Van Thourhout, D

    2013-06-03

    Compact multi-frequency lasers are realized by combining III-V based optical amplifiers with silicon waveguide optical demultiplexers using a heterogeneous integration process based on adhesive wafer bonding. Both devices using arrayed waveguide grating routers as well as devices using ring resonators as the demultiplexer showed lasing with threshold currents between 30 and 40 mA and output powers in the order of a few mW. Laser operation up to 60°C is demonstrated. The small bending radius allowable for the silicon waveguides results in a short cavity length, ensuring stable lasing in a single longitudinal mode, even with relaxed values for the intra-cavity filter bandwidths.

  18. Propiedades electrónicas de semiconductores III-V sometidos a tensión uniaxial en la dirección [111]; un enfoque según el método tight-binding: II. Antimoniuros y Fosfuros

    Directory of Open Access Journals (Sweden)

    J. Juan Martín Mozo

    2010-01-01

    Full Text Available Empleando un esquema de cálculo tight-binding que usa una base de orbitales sp3s*d5, se estudian propiedades de la estructura electrónica de un grupo de materiales semiconductores IIIV los cuales son de interés para la tecnología de dispositivos electrónicos y optoelectrónicos. En específico, se analiza la influencia sobre estas propiedades de una tensión aplicada según la dirección cristalográfica [111], haciendo uso de una formulación presentada en la primera parte del trabajo [Mora-Ramos 2009]. Especial atención se presta a la inclusión del efecto de deformación interna de la red cristalina. Para cada material de los estudiados presentamos las dependencias de las brechas energéticas asociadas a los puntos ¿, X y L de la zona de Brillouin como funciones de la tensión uniaxial en AlP, InP, AlSb, GaSb, InSb. Asimismo, reportamos expresiones de ajuste para los valores de las principales brechas energéticas en esos cinco materiales. Se detecta una fuerte dependencia no lineal de estas magnitudes, así como de las masas efectivas de conducción, con la tensión.

  19. Graded core/shell semiconductor nanorods and nanorod barcodes

    Science.gov (United States)

    Alivisatos, A. Paul; Scher, Erik C.; Manna, Liberato

    2009-05-19

    Disclosed herein is a graded core/shell semiconductor nanorod having at least a first segment of a core of a Group II-VI, Group III-V or a Group IV semiconductor, a graded shell overlying the core, wherein the graded shell comprises at least two monolayers, wherein the at least two monolayers each independently comprise a Group II-VI, Group III-V or a Group IV semiconductor.

  20. Scalable, epitaxy-free fabrication of super-absorbing sparse III-V nanowire arrays for photovoltaic applications (Conference Presentation)

    Science.gov (United States)

    Cheng, Wen-Hui; Fountaine, Katherine T.; Bukowsky, Colton R.; Atwater, Harry A.

    2016-09-01

    III-V compound semiconductor nanowire arrays are promising candidates for photovoltaics applications due to their high volumetric absorption. Uniform nanowire arrays exhibit high absorption at certain wavelengths due to strong coupling into lossy waveguide modes. Previously, simulations predicted near-unity, broadband absorption in sparse semiconductor nanowire arrays (Polymer-embedded wires are removed from the bulk InP substrate by a mechanical method that facilitates extensive reuse of a single bulk InP wafer to synthesize many polymer-embedded nanowire array thin films. Arrays containing multiple nanowire radii and tapered nanowires were successfully fabricated. For both designs, the polymer-embedded arrays achieved 90% broadband absorption (λ=400-900 nm) in less than 100 nm planar equivalence of InP. The addition of a silver back reflector increased this broadband absorption to 95%. The repeatable process of imprinting, etching and peeling to obtain many nanowire arrays from one single wafer represents an economical manufacturing route for high efficiency III-V photovoltaics. [1] K.T. Fountaine, C.G. Kendall, Harry A. Atwater, "Near-unity broadband absorption designs for semiconducting nanowire arrays via localized radial mode excitation," Opt. Exp. (2014).

  1. Effect of III-V on insulator structure on quantum well intermixing

    Science.gov (United States)

    Takashima, Seiya; Ikku, Yuki; Takenaka, Mitsuru; Takagi, Shinichi

    2016-04-01

    To achieve the monolithic active/passive integration on the III-V CMOS photonics platform, quantum well intermixing (QWI) on III-V on insulator (III-V-OI) is studied for fabricating multi-bandgap III-V-OI wafers. By optimizing the QWI condition for a 250-nm-thick III-V layer, which contains a five-layer InGaAsP-based multi-quantum well (MQW) with 80-nm-thick indium phosphide (InP) cladding layers, we have successfully achieved a photoluminescence (PL) peak shift of over 100 nm on the III-V-OI wafer. We have also found that the progress of QWI on the III-V-OI wafer is slower than that on the InP bulk wafer regardless of the buried oxide (BOX) thickness, bonding interface materials, and handle wafers. We have also found that the progress of QWI on the III-V-OI wafer is slower than that on the InP bulk wafer regardless of the buried oxide (BOX) thickness, bonding interface materials, and bulk support wafers on which the III-V-OI structure is formed (handle wafers). By comparing between the measured PL shift and simulated diffusions of phosphorus vacancies and interstitials during QWI, we have found that the slow QWI progress in the III-V-OI wafer is probably attributed to the enhanced recombination of vacancies and interstitials by the diffusion blocking of vacancies and interstitials at the BOX interface.

  2. Methods for fabricating thin film III-V compound solar cell

    Science.gov (United States)

    Pan, Noren; Hillier, Glen; Vu, Duy Phach; Tatavarti, Rao; Youtsey, Christopher; McCallum, David; Martin, Genevieve

    2011-08-09

    The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.

  3. Fullerene Molecules and Other Clusters of III-V Compounds

    Science.gov (United States)

    Hira, Ajit; Auxier, John, II; Lucero, Melinda

    2010-03-01

    The goal of the our work is to derive geometries of fullerene-like cages and other clusters of atoms from groups III and V of the periodic table. Our previous research focused on Carbon Fullerenes and on GanAsn clusters (n = 1 thru 12). Our research group has made an original discovery about GanAsn clusters. In our work on nanotechnology to date, we used the hybrid ab initio methods of quantum chemistry to derive the different geometries for the clusters of interest. We also calculated binding energies, bond-lengths, ionization potentials, electron affinities and HOMO-LUMO gaps, and IR spectra for these geometries. Of particular significance was the magic number for GaAs cluster stability that we found at n = 8. This is important because materials containing controlled III-V nanostructures provide the capability of preparing new classes of materials with enhanced optical, magnetic, chemical sensor and photo-catalytic properties. The second phase of the investigation will examine the effects of confinement on the optical properties the clusters. It will be interesting to observe novel linear as well as nonlinear optical processes in them. The third phase of the investigation will focus on the improved design of solar cells based on the optical properties of the clusters.

  4. Minimizing the scattering of a nonmagnetic cloak

    DEFF Research Database (Denmark)

    Zhang, Jingjing; Luo, Yu; Mortensen, Asger

    2010-01-01

    Nonmagnetic cloak offers a feasible way to achieve invisibility at optical frequencies using materials with only electric responses. In this letter, we suggest an approximation of the ideal nonmagnetic cloak and quantitatively study its electromagnetic characteristics using a full-wave scattering...

  5. Rigorous analysis of non-magnetic cloaks

    DEFF Research Database (Denmark)

    Zhang, Jingjing; Luo, Yu; Mortensen, Asger

    2010-01-01

    Nonmagnetic cloak offers a feasible way to achieve invisibility at optical frequencies using materials with only electric responses. In this letter, we suggest an approximation of the ideal nonmagnetic cloak and quantitatively study its electromagnetic characteristics using a full-wave scattering...

  6. Micro-Hall magnetic sensors with high magnetic sensitivity based on III-V heterostructures

    Science.gov (United States)

    Del Medico, S.; Benyattou, Taha; Guillot, Gerard; Venet, T.; Gendry, Michel; Tardy, Jacques; Chovet, Alain

    1996-04-01

    In this work, we propose solutions based on engineering of III-V heterostructures to develop new types of semiconductor magnetic sensors. These micro-Hall sensors use the properties of a 2D electron gas and the benefit of pseudomorphic material, in which both the alloy composition and the built-in strain offer additional degrees of freedom for band structure tailoring, to exhibit high magnetic sensitivity, good linearity, low temperature coefficient and high resolution. With the growth optimization which is described, two pseudomorphic In0.75Ga0.25As/In0.52Al0.48As heterostructures were grown on a semi- insulating InP substrate by molecular beam epitaxy. To understand better the influence of the heterostructure design on its electronic properties, a model involving the self-consistent solution of the Poisson and Schrodinger equations using the Fermi-Dirac statistics has been developed. These results have been used to optimize the structure design. A magnetic sensitivity of 346 V/AT with a temperature coefficient of -230 ppm/ degree(s)C between -80 degree(s)C and 85 degree(s)C has been obtained. The device show good linearity against magnetic field and also against the supply current. High signal-to-noise ratios corresponding to minimal magnetic field of 350 nT/Hz1/2 at 100 Hz and 120 nT/Hz1/2 at 1 kHz have been measured.

  7. Absorption and transmission of light in III-V nanowire arrays for tandem solar cell applications

    Science.gov (United States)

    Anttu, Nicklas; Dagytė, Vilgailė; Zeng, Xulu; Otnes, Gaute; Borgström, Magnus

    2017-05-01

    III-V semiconductor nanowires are a platform for next-generation photovoltaics. An interesting research direction is to embed a nanowire array in a transparent polymer, either to act as a stand-alone flexible solar cell, or to be stacked on top of a conventional Si bottom cell to create a tandem structure. To optimize the tandem cell performance, high energy photons should be absorbed in the nanowires whereas low energy photons should be transmitted to and absorbed in the Si cell. Here, through optical measurements on 1.95 eV bandgap GaInP nanowire arrays embedded in a polymer membrane, we identify two mechanisms that could be detrimental for the performance of the tandem cell. First, the Au particles used in the nanowire synthesis can absorb >50% of the low-energy photons, leading to a 80%. Second, after the removal of the Au particles, a 40% reflectance peak shows up due to resonant back-scattering of light from in-plane waveguide modes. To avoid the excitation of these optical modes in the nanowire array, we propose to limit the pitch of the nanowire array.

  8. Garnet-free optical circulators monolithically integrated on spatially modified III-V quantum wells

    CERN Document Server

    Aleahmad, Parinaz; Christodoulides, Demetrios; LiKamWa, Patrick

    2016-01-01

    Optical circulators are indispensable components in photonic networks that are aimed to route information in a unidirectional way among their N-ports1,2. In general, these devices rely on magneto-optical garnets3 with appreciable Verdet constants that are utilized in conjunction with other elements like permanent magnets, wave-plates, birefringent crystals and/or beam splitters. Consequently, these arrangements are typically bulky and hence not conducive to on-chip photonic integration4-6. Of interest would be to devise strategies through which miniaturized optical circulators can be monolithically fabricated on light-emitting semiconductor platforms by solely relying on physical properties that are indigenous to the material itself. By exploiting the interplay between non-Hermiticity and nonlinearity, here we demonstrate a new class of chip-scale circulators on spatially modified III-V quantum well systems. These garnet-free unidirectional structures are broadband (over 2.5 THz) at 1550 nm, effectively loss-...

  9. Epitaxial growth of three dimensionally structured III-V photonic crystal via hydride vapor phase epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Zheng, Qiye; Kim, Honggyu; Zhang, Runyu; Zuo, Jianmin; Braun, Paul V., E-mail: pbraun@illinois.edu [Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); Sardela, Mauro [Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); Balaji, Manavaimaran; Lourdudoss, Sebastian; Sun, Yan-Ting [Laboratory of Semiconductor Materials, Department of Materials and Nano Physics, Royal Institute of Technology (KTH), Electrum 229, 164 40 Kista (Sweden)

    2015-12-14

    Three-dimensional (3D) photonic crystals are one class of materials where epitaxy, and the resultant attractive electronic properties, would enable new functionalities for optoelectronic devices. Here we utilize self-assembled colloidal templates to fabricate epitaxially grown single crystal 3D mesostructured Ga{sub x}In{sub 1−x}P (GaInP) semiconductor photonic crystals using hydride vapor phase epitaxy (HVPE). The epitaxial relationship between the 3D GaInP and the substrate is preserved during the growth through the complex geometry of the template as confirmed by X-ray diffraction (XRD) and high resolution transmission electron microscopy. XRD reciprocal space mapping of the 3D epitaxial layer further demonstrates the film to be nearly fully relaxed with a negligible strain gradient. Fourier transform infrared spectroscopy reflection measurement indicates the optical properties of the photonic crystal which agree with finite difference time domain simulations. This work extends the scope of the very few known methods for the fabrication of epitaxial III-V 3D mesostructured materials to the well-developed HVPE technique.

  10. Slow Light Semiconductor Laser

    Science.gov (United States)

    2015-02-02

    we demonstrate a semiconductor laser with a spectral linewidth of 18 kHz in the telecom band around 1:55um. The views, opinions and/or findings...we demonstrate a semiconductor laser with a spectral linewidth of 18 kHz in the telecom band around 1:55um. Further, the large intracavity field...hybrid Si/III- V platforms Abstract The semiconductor laser is the principal light source powering the world-wide optical fiber network . Ever

  11. Vertical III-V nanowire device integration on Si(100).

    Science.gov (United States)

    Borg, Mattias; Schmid, Heinz; Moselund, Kirsten E; Signorello, Giorgio; Gignac, Lynne; Bruley, John; Breslin, Chris; Das Kanungo, Pratyush; Werner, Peter; Riel, Heike

    2014-01-01

    We report complementary metal-oxide-semiconductor (CMOS)-compatible integration of compound semiconductors on Si substrates. InAs and GaAs nanowires are selectively grown in vertical SiO2 nanotube templates fabricated on Si substrates of varying crystallographic orientations, including nanocrystalline Si. The nanowires investigated are epitaxially grown, single-crystalline, free from threading dislocations, and with an orientation and dimension directly given by the shape of the template. GaAs nanowires exhibit stable photoluminescence at room temperature, with a higher measured intensity when still surrounded by the template. Si-InAs heterojunction nanowire tunnel diodes were fabricated on Si(100) and are electrically characterized. The results indicate a high uniformity and scalability in the fabrication process.

  12. Resonantly enhanced second-harmonic generation using III-V semiconductor all-dielectric metasurfaces

    CERN Document Server

    Liu, Sheng; Keeler, Gordon A; Sinclair, Michael B; Yang, Yuanmu; Reno, John; Pertsch, Thomas; Brener, Igal

    2016-01-01

    Nonlinear optical phenomena in nanostructured materials have been challenging our perceptions of nonlinear optical processes that have been explored since the invention of lasers. For example, the ability to control optical field confinement, enhancement, and scattering almost independently, allows nonlinear frequency conversion efficiencies to be enhanced by many orders of magnitude compared to bulk materials. Also, the subwavelength length scales render phase matching issues irrelevant. Compared with plasmonic nanostructures, dielectric resonator metamaterials show great promise for enhanced nonlinear optical processes due to their larger mode volumes. Here, we present, for the first time, resonantly enhanced second-harmonic generation (SHG) using Gallium Arsenide (GaAs) based dielectric metasurfaces. Using arrays of cylindrical resonators we observe SHG enhancement factors as large as 104 relative to unpatterned GaAs. At the magnetic dipole resonance we measure an absolute nonlinear conversion efficiency o...

  13. Structure of metal-rich (001) surfaces of III-V compound semiconductors

    DEFF Research Database (Denmark)

    Kumpf, C.; Smilgies, D.; Landemark, E.

    2001-01-01

    feature of the structure is accompanied by linear arrays of atoms on nonbulklike sites at the surface which, depending on the compounds, exhibit a certain degree of disorder. A tendency to group-III-dimer formation within these chains increases when descending the periodic table. We propose that all the c...

  14. The Longwave Silicon Chip - Integrated Plasma-Photonics in Group IV And III-V Semiconductors

    Science.gov (United States)

    2013-10-01

    collaboration on theory: Walter Buchwald, UMass Boston; Justin Cleary, AFRL; Joshua Hendrickson, AFRL; Jacob Khurgin, Johns Hopkins; Zoran Ikonic , Univ... Ikonic , “The direct and indirect bandgaps of SixGe1-x-ySny and their photonic device applications” Journal of Applied Physics, vol. 112, 073106

  15. Virtual crystal description of III-V semiconductor alloys in the tight binding approach

    Science.gov (United States)

    Nestoklon, M. O.; Benchamekh, R.; Voisin, P.

    2016-08-01

    We propose a simple and effective approach to construct the empirical tight-binding parameters of ternary alloys in the virtual crystal approximation. This combines a new, compact formulation of the strain parameters and a linear interpolation of the Hamiltonians of binary materials strained to the alloy equilibrium lattice parameter. We show that it is possible to obtain a perfect description of the bandgap bowing of ternary alloys in the InGaAsSb family of materials. Furthermore, this approach is in a good agreement with supercell calculations using the same set of parameters. This scheme opens a way for atomistic modeling of alloy-based quantum wells and quantum wires without extensive supercell calculations.

  16. Growth and properties of low-dimensional III-V semiconductor nanowire heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Heiss, Martin

    2010-08-25

    In this work the properties of GaAs nanowire based heterostructures are investigated. The nanowires and their heterostructures are synthesized with Molecular Beam Epitaxy. The optical and structural properties are characterized by means of low temperature confocal micro-photoluminescence spectroscopy and Transmission Electron Microscopy. Molecular Beam Epitaxy is a versatile technique that allows to switch from radial to axial growth in order to cap the nanowires by an epitaxial prismatic AlGaAs/GaAs heterostructure. This can passivate surface states and improve the optical properties. The effect of such a passivation layer is studied by quantitative comparison of the diameter dependence of photoluminescence in passivated and unpassivated nanowires. The passivation is an important prerequisite for more complex axial heterostructures. Evidence for radial confinement effects is found in passivated nanowires with core diameters smaller than 70 nm. Furthermore, the polarization dependence of light absorption and emission is investigated. Two different types of axial heterostructures are studied that have the potential to further enhance the functionality of such nanowires. In a first step, the possibility of growth of axial InGaAs heterostructure in the Au-free Molecular Beam Epitaxy growth regime is investigated. Suitable growth conditions are identified and the growth temperature window for both GaAs and InGaAs nanowires is determined. At the optimum growth temperature for GaAs nanowires, the incorporation of indium in the structure is limited to a few percent. It is shown that by lowering the growth temperature the indium concentration in the structure can be increased up to 20%. The optical properties of the synthesized axial heterostructures are investigated by means of micro-photoluminescence spectroscopy and Transmission Electron Microscopy. The second type of axial nanowire heterostructure investigated in the present work is characterized by a change in crystal symmetry from cubic zinc-blende to hexagonal wurtzite structure, while the chemical composition of the material remains constant. The GaAs nanowires synthesized with the Au-free technique can be grown under conditions where a statistical wurtzite/zinc-blende polytypism occurs. A novel method for the direct correlation at the nanoscale of structural and optical properties of single GaAs nanowires is developed in order to characterize the resulting statistically distributed quantum heterostructures. Nanowires consisting of {approx}100% wurtzite and nanowires presenting zinc-blende/wurtzite polytypism are studied by photoluminescence spectroscopy and Transmission Electron Microscopy. The photoluminescence of wurtzite GaAs is found to be consistent with a bulk wurtzite band gap of 1.50 eV, slightly smaller compared to the zinc-blende GaAs band gap. In the polytypic nanowires, it is shown that the regions that are predominantly composed of either zinc-blende or wurtzite phase show photoluminescence emission close to the according bulk band gaps, while regions composed of a non periodic superlattice of wurtzite and zinc-blende phases exhibit a redshift of the photoluminescence spectra as low as 1.455 eV. The dimensions of the quantum heterostructures are correlated with the light emission, allowing us to estimate the band offsets of {delta}E{sub CB}=53{+-}20 meV and {delta}E{sub VB}=76{+-}12 meV between the two crystalline phases. These results are in excellent agreement with recent theoretical band structure calculations. (orig.)

  17. The Surface Structure, Scattering Losses and Schottky Barrier Model of III-V Compound Semiconductors.

    Science.gov (United States)

    1982-12-21

    CEN,CS2,CS4,CDS2,CDS4,CNi2 COMPLEX CN3 ,CN4 ,CN , CBETA, CMPLX, CATAN PRI-3. 14159625 CN1-CMPLX(3 .4700,-a .0005) CN2-1 .0 CN3-3.42 CN4-3.4 CN5-3.42 RK...CN1**2-CN5**2) *R**2...**2) CDS3-(- ) *CKX*CN3**2/CN1**2/CS3 CDS5-(-1) *CK*CN45**2/CNl**2/CS5 CFEMCKX=*A-P*PHI+ CATAN (-GUS 3) + CATAN (-GUS 5...0.002) 45 CS2-CSQRT(C(CN1**2-CGN2**2) *RJ**2...=**2) CS4-CSQRT ((CN1**2-CN4**2) *R**2-CCY**2) CDS2-(-.) *CKY/CS2 CDS4u(.)*K/CS4 CFKY-CX!*B-Q*PHI+ CATAN

  18. Stable vapor transportation of solid sources in MOVPE of III V compound semiconductors

    Science.gov (United States)

    Shenai-Khatkhate, Deodatta V.; DiCarlo, Ronald L.; Marsman, Charles J.; Polcari, Robert F.; Ware, Robert A.; Woelk, Egbert

    2007-01-01

    Trimethylindium (TMI), in spite of being a solid, has remained the precursor of choice for the deposition of indium containing layers by MOVPE. However, maintaining stable TMI flows and constant concentrations in gas phase during the growth still continue to be a major concern in MOVPE. This issue is further compounded by lower TMI consumptions achieved as the MOVPE growth conditions become increasingly more aggressive to meet the industry demand of higher throughputs, e.g. at higher flow rates, or at reduced pressures or when TMI source is maintained at higher temperatures. In this paper, we report our new findings of improved TMI delivery (>90, and in some cases >95%) with excellent stability of TMI concentration throughout the cylinder lifetime. These results are achieved using standard fill capacity and under intentionally set aggressive conditions of pressure, temperature and flow. We report a novel delivery technology (Uni-Flo™ II cylinder) that is customer proven and comprises innovative improvements to our dip-tube-less cylinder design, Uni-Flo™ cylinder, and advancements in TMI packaging. In this report, TMI depletion rates are examined over an extensive range of operating parameters currently employed in MOVPE, viz. flow rates ranging from 100 to 1000 sccm, source temperatures between 17 and 30 °C, and reactor pressures in the range 300-1000 mbar. We report, significant improvements in TMI delivery (>95% depletion) at higher molar flux of TMI (>3 g/h) and an excellent reproducible dosimetry of TMI with no batch-to-batch variation, by using Uni-Flo™ II cylinder as the enabling solution to TMI delivery problems.

  19. Low Temperature Photoluminescence Study of Holmium and Thulium Implanted into III-V Semiconductors and Silicon.

    Science.gov (United States)

    1990-12-01

    Iwhere m* is the reduced mass formed from the nuclear mass and the electron or hole effective mass, and the other variables are as described for...Implanted Samples COND DOPING ANNEAL VENDOR3 TYPE TEMP/TIME/GAS n ? 750"C/15 min/N2 Wacker p B 750"C/15 min/N2 Reticon SI - 850"C/15 min/H2 MW SI

  20. Theoretical Crystal-Field Calculations for Rare-Earth Ions in III-V semiconductor Compounds

    Science.gov (United States)

    1991-10-01

    has recently generated a great deal of interest, motivated primarily by potential applications in optoelectronic devices. Many groups have reported...values again correspond to ionic charges larger than ±3. In general , it is more difficult to fit data measured in emission than in absorption, and it is...Washougal, WA 98671 Attn SLCHD-NW-TN, Chief Attn SLCHD-NW-TS, Chief Departmento Quimica Fundamental Attn SLCHD-PO, Chief Universidade Federal de

  1. III-V Semiconductor Quantum Well Lasers and Related Optoelectronic Devices (On Silicon)

    Science.gov (United States)

    1992-06-01

    The laser fabrication begins with the patterning of for optoelectronic integrated circuits (OEICs), a planar 1 000 A of Si3N4 into rings [25-jim-wide...is grown in the center of the wave- guide in the lateral direction. guide layer. The effect of the optical waveguide is shown by the The laser ... fabrication begins with the deposition on the near-field (NF) pattern in the inset (b) of the -2-jim- crystal of - 1000 Ak Si 3N4, which is patterned with

  2. Time Resolved Studies of Carrier Dynamics in III -v Heterojunction Semiconductors.

    Science.gov (United States)

    Westland, Duncan James

    Available from UMI in association with The British Library. Requires signed TDF. Picosecond time-resolution photoluminescence spectroscopy has been used to study transient processes in Ga _{.47}In_{.53 }As/InP multiple quantum wells (MQWs), and in bulk Ga_{.47}In _{.53}As and GaSb. To facilitate the experimental studies, apparatus was constructed to allow the detection of transient luminescence with 3ps time resolution. A frequency upconversion technique was employed. Relaxation of energetic carriers in bulk Ga _{.47}In_{.53 }As by optic phonons has been investigated, and, at carrier densities ~3 times 10^{18}cm ^{-3} is found to be a considerably slower process than simple theory predicts. The discrepancy is resolved by the inclusion of a non-equilibrium population of longitudinal optic phonons in the theoretical description. Slow energy loss is also observed in a 154A MQW under similar conditions, but carriers are found to relax more quickly in a 14A MQW with a comparable repeat period. The theory of non-equilibrium mode occupation is modified to describe the case of a MQW and is found to agree with experiment. Carrier relaxation in GaSb is studied and the importance of occupation of the L _6 conduction band valley in this material is demonstrated. The ambipolar diffusion of a photoexcited carrier plasma through an InP capping layer was investigated using an optical time-of-flight technique. This experiment also enables the efficiency of carrier capture by a Ga _{.47}In_{.53 }As quantum well to be determined. A capture time of 4ps was found.

  3. Nanometer-Scale Compositional Structure in III-V Semiconductor Heterostructures Characterized by Scanning Tunneling Microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Allerman, A.A.; Bi, W.G.; Biefeld, R.M.; Tu, C.W.; Yu, E.T.; Zuo, S.L.

    1998-11-10

    Nanometer-scale compositional structure in InAsxP1.InNYAsxPl.x-Y/InP, grown by gas-source molecular-beam epitaxy and in InAsl-xPJkAsl$b#InAs heterostructures heterostructures grown by metal-organic chemical vapor deposition has been characterized using cross-sectional scanning tunneling microscopy. InAsxP1-x alloy layers are found to contain As-rich and P-rich clusters with boundaries formed preferentially within (T 11) and (111) crystal planes. Similar compositional structure is observed within InNYAsxP1-x-Y alloy layers. Imaging of InAsl-xp@Asl#bY superlattices reveals nanometer-scale clustering within both the hAsI-.p and InAsl$bY alloy layers, with preferential alignment of compositional features in the direction. Instances are observed of compositional structure correlated across a heterojunction interface, with regions whose composition corresponds to a smaller unstrained lattice, constant relative to the surrounding alloy material appearing to propagate across the interface.

  4. Investigation of proton damage in III-V semiconductors by optical spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Yaccuzzi, E.; Giudici, P. [Departamento Energía Solar, Centro Atómico Constituyentes, Av. Gral. Paz 1499, 1650 San Martín (Argentina); CONICET, Godoy Cruz 2290 (C1425FQB), CABA (Argentina); Khachadorian, S.; Strittmatter, A.; Hoffmann, A. [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin (Germany); Suárez, S. [Laboratorio de Colisiones Atómicas, Centro Atómico Bariloche, E. Bustillo 9500, 8400 Bariloche (Argentina); CONICET, Godoy Cruz 2290 (C1425FQB), CABA (Argentina); Reinoso, M. [Departamento Física Experimental, Centro Atómico Constituyentes, Av. Gral. Paz 1499, 1650 San Martín (Argentina); CONICET, Godoy Cruz 2290 (C1425FQB), CABA (Argentina); Goñi, A. R. [ICREA, Passeig Lluís Companys 23, 08010 Barcelona (Spain); Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193 Bellaterra (Spain)

    2016-06-21

    We studied the damage produced by 2 MeV proton radiation on epitaxially grown InGaP/GaAs structure by means of spatially resolved Raman and photoluminescence (PL) spectroscopy. The irradiation was performed parallel to the sample surface in order to determine the proton penetration range in both compounds. An increase in the intensity of longitudinal optical phonons and a decrease in the luminescence were observed. We associate these changes with the creation of defects in the damaged region, also responsible for the observed change of the carrier concentration in the GaAs layer, determined by the shift of the phonon-plasmon coupled mode frequency. From the spatially resolved profile of the PL and phonon intensities, we obtained the proton range in both materials and we compared them with stopping and range of ions in matter simulations. The comparison between the experimentally obtained proton range and simulations shows a very good agreement for GaAs but a discrepancy of 20% for InGaP. This discrepancy can be explained in terms of limitations of the model to simulate the electronic orbitals and bonding structure of the simulated compound. In order to overcome this limitation, we propose an increase in 40% in the electronic stopping power for InGaP.

  5. Thermodynamics of solid and liquid group III-V alloys

    Energy Technology Data Exchange (ETDEWEB)

    Anderson, T.J.

    1978-10-01

    Solid-state electrochemical techniques are applied to the Ga-In-Sb-O system to measure some thermodynamic properties important for the analysis of solid-liquid phase equilibria in these important semiconductor materials. The standard Gibbs energies of formation of the most stable oxides of gallium and of indium are determined with a high-temperature solid-state electrochemical cell utilizing calcia-stabilized zirconia as the solid electrolyte and a (CO + CO/sub 2/) gaseous mixture as the reference electrode.

  6. Analysis of novel silicon and III-V solar cells by simulation and experiment; Analyse neuartiger Silizium- und III-V-Solarzellen mittels Simulation und Experiment

    Energy Technology Data Exchange (ETDEWEB)

    Hermle, Martin

    2008-11-27

    This work presents various simulation studies of silicon and III-V solar cells. For standard silicon solar cells, one of the critical parameters to obtain good performance, is the rear side recombination velocity. The optical and electrical differences of the different cell structures were determined. The optical differences and the effective recombination velocity Sback of the different rear side structures for 1 Ohmcm material were extracted. Beside standard silicon solar cells, back junction silicon solar cells were investigated. Especially the influence of the front surface field and the electrical shading due to the rear side, was investigated. In the last two chapters, III-V solar cells were analysed. For the simulation of III-V multi-junction solar cells, the simulation of the tunneldiode is the basic prerequisite. In this work, the numerical calibration of an GaAs tunneldiode was achieved by using an non-local tunnel model. Using this model, it was possible to successfully simulate a III-V tandem solar cell. The last chapter deals with an optimization of the III-V 3-junction cell for space applications. Especially the influence of the GaAs middle cell was investigated. Due to structural changes, the end-of-life efficiency was drastically increased.

  7. Genetic Algorithm for Innovative Device Designs in High-Efficiency III-V Nitride Light-Emitting Diodes

    Science.gov (United States)

    Zhu, Di; Schubert, Martin F.; Cho, Jaehee; Schubert, E. Fred; Crawford, Mary H.; Koleske, Daniel D.; Shim, Hyunwook; Sone, Cheolsoo

    2012-01-01

    Light-emitting diodes are becoming the next-generation light source because of their prominent benefits in energy efficiency, versatility, and benign environmental impact. However, because of the unique polarization effects in III-V nitrides and the high complexity of light-emitting diodes, further breakthroughs towards truly optimized devices are required. Here we introduce the concept of artificial evolution into the device optimization process. Reproduction and selection are accomplished by means of an advanced genetic algorithm and device simulator, respectively. We demonstrate that this approach can lead to new device structures that go beyond conventional approaches. The innovative designs originating from the genetic algorithm and the demonstration of the predicted results by implementing structures suggested by the algorithm establish a new avenue for complex semiconductor device design and optimization.

  8. Growth and characterization of manganese doped III-V heterostructures; Herstellung und Charakterisierung von Mangan dotierten III-V Halbleiterheterostrukturen

    Energy Technology Data Exchange (ETDEWEB)

    Wurstbauer, Ursula

    2008-04-15

    Subject of this thesis is the growth of III-V heterostructures doped with manganese by means of molecular beam epitaxy (MBE). The characterization was done primarily by magnetotransport measurements in the temperature range from 300 K to 20 mK and fields up to 19 T. Two different kind of Mn doped materials, ferromagnetic GaMnAs layers and Mn modulation doped magnetic two dimensional hole systems were studied. The first part focuses on the enhancement of the electric and magnetic properties of ferromagnetic properties and the integration of GaMnAs layers in more sophisticated heterostructures. Therefore, the crystal quality and the influence of the buffer layer beneath the magnetic layer are crucial. The MBE-growth of ferromagnetic GaMnAs layers on (001), (311)A and (311)A was successfully achieved with present values of the Curie-temperature (TC). Additionally, the growth of ferromagnetic GaMnAs layers on nonpolar (110) substrates and on cleaved [110] edges was established. An application of the latter was the investigation of magnetic bipolar junctions. Magnetic two dimensional hole gases (M2DHG) has been realized by the use of In0.75Al0.25As/In0.75Ga0.25As/InAs quantum well (QW) structures. It is necessary to grow a buffer layer for strain relaxation due to the lattice mismatch by gradually increasing the In mole fraction. Magnetotransport measurements were carried out on Si doped two-dimensional electron gases (2DEG) and on Mn doped M2DHGs. From magnetotransport measurements on the M2DHGs we see some interesting features, in particular in the mK region. From the 2DEGs and all non inverted doped M2DEGs weak localization and weak antilocalization effects can be observed in the low field region. Whereas all M2DHGs with an inverted doping layer show strong localization effects and a metal insulator transition dependent on the applied magnetic field perpendicular to the QW. In the high field region Shubnikov-de-Haas oscillations in the longitudinal resistance and

  9. Refractive Indices of Semiconductors from Energy gaps

    CERN Document Server

    Tripathy, S K

    2015-01-01

    An empirical relation based on energy gap and refractive index data has been proposed in the present study to calculate the refractive index of semiconductors. The proposed model is then applied to binary as well as ternary semiconductors for a wide range of energy gap. Using the relation, dielectric constants of some III-V group semiconductors are calculated. The calculated values for different group of binary semiconductors, alkali halides and ternary semiconductors fairly agree with other calculations and known values over a wide range of energy gap. The temperature variation of refractive index for some binary semiconductors have been calculated.

  10. Phenomenological survey on the potential profile evolution in III-V binary compounds

    Directory of Open Access Journals (Sweden)

    Alejandro Mendoza Álvarez

    2011-01-01

    Full Text Available En este artículo se presenta el cambio en el perfil de eficacia potencial de algunos compuestos cuando el bandmixing de huecos ligeros y pesados se altera. Se obtuvieron mediante la aplicación de este teorema generalizado Shur a un problema de valores propios cuadrática obtenidos a partir de un sistema con N ecuaciones de segundo orden, junto en el contexto de la aproximación de masa efectiva multibanda. Se consideraron los valores de energía incidente que fue menor, igual y superior a la altura de la barrera de dispersión potencial de diferentes compuestos de semiconductores III-V binario. La mayoría de las propiedades estándar de los compuestos binarios en este estudio están garantizados, pero no todos los materiales que elegimos, han puesto de manifiesto la evolución que se espera en su perfil de potencial efectivo: algunos de los que constituyen los pozos cuánticos (QW en aplicaciones tecnológicas sólo convertirse en efectiva barrera (B las conductas de los agujeros de luz (LH cuando están en la energía incidente diferente (E se extiende y bandmixing diferentes presentes. Ninguno de los compuestos que constituyen barreras para las aplicaciones tecnológicas en este estudio se convierte en eficaz comportamientos QW válido tanto para la LH y HH. Sorprendentemente, todos los compuestos en este estudio que constituyen barreras estándar en las aplicaciones tecnológicas, las transiciones presente desde CS a B para la LH en el rango donde el valor de E es mayor que la altura de la barrera.

  11. Nuclear conversion theory: molecular hydrogen in non-magnetic insulators

    Science.gov (United States)

    Ilisca, Ernest; Ghiglieno, Filippo

    2016-09-01

    The hydrogen conversion patterns on non-magnetic solids sensitively depend upon the degree of singlet/triplet mixing in the intermediates of the catalytic reaction. Three main `symmetry-breaking' interactions are brought together. In a typical channel, the electron spin-orbit (SO) couplings introduce some magnetic excitations in the non-magnetic solid ground state. The electron spin is exchanged with a molecular one by the electric molecule-solid electron repulsion, mixing the bonding and antibonding states and affecting the molecule rotation. Finally, the magnetic hyperfine contact transfers the electron spin angular momentum to the nuclei. Two families of channels are considered and a simple criterion based on the SO coupling strength is proposed to select the most efficient one. The denoted `electronic' conversion path involves an emission of excitons that propagate and disintegrate in the bulk. In the other denoted `nuclear', the excited electron states are transients of a loop, and the electron system returns to its fundamental ground state. The described model enlarges previous studies by extending the electron basis to charge-transfer states and `continui' of band states, and focuses on the broadening of the antibonding molecular excited state by the solid conduction band that provides efficient tunnelling paths for the hydrogen conversion. After working out the general conversion algebra, the conversion rates of hydrogen on insulating and semiconductor solids are related to a few molecule-solid parameters (gap width, ionization and affinity potentials) and compared with experimental measures.

  12. Giant spin Seebeck effect in a non-magnetic material.

    Science.gov (United States)

    Jaworski, C M; Myers, R C; Johnston-Halperin, E; Heremans, J P

    2012-07-11

    The spin Seebeck effect is observed when a thermal gradient applied to a spin-polarized material leads to a spatially varying transverse spin current in an adjacent non-spin-polarized material, where it gets converted into a measurable voltage. It has been previously observed with a magnitude of microvolts per kelvin in magnetically ordered materials, ferromagnetic metals, semiconductors and insulators. Here we describe a signal in a non-magnetic semiconductor (InSb) that has the hallmarks of being produced by the spin Seebeck effect, but is three orders of magnitude larger (millivolts per kelvin). We refer to the phenomenon that produces it as the giant spin Seebeck effect. Quantizing magnetic fields spin-polarize conduction electrons in semiconductors by means of Zeeman splitting, which spin-orbit coupling amplifies by a factor of ∼25 in InSb. We propose that the giant spin Seebeck effect is mediated by phonon-electron drag, which changes the electrons' momentum and directly modifies the spin-splitting energy through spin-orbit interactions. Owing to the simultaneously strong phonon-electron drag and spin-orbit coupling in InSb, the magnitude of the giant spin Seebeck voltage is comparable to the largest known classical thermopower values.

  13. High Efficiency Quantum Dot III-V Multijunction Solar Cell for Space Power Project

    Data.gov (United States)

    National Aeronautics and Space Administration — We are proposing to utilize quantum dots to develop a super high-efficiency multijunction III-V solar cell for space. In metamorphic triple junction space solar...

  14. Engineering magnetism in semiconductors

    Directory of Open Access Journals (Sweden)

    Tomasz Dietl

    2006-11-01

    Full Text Available Transition metal doped III-V, II-VI, and group IV compounds offer an unprecedented opportunity to explore ferromagnetism in semiconductors. Because ferromagnetic spin-spin interactions are mediated by holes in the valence band, changing the Fermi level using co-doping, electric fields, or light can directly manipulate the magnetic ordering. Moreover, engineering the Fermi level position by co-doping makes it possible to modify solubility and self-compensation limits, affecting magnetic characteristics in a number of surprising ways. The Fermi energy can even control the aggregation of magnetic ions, providing a new route to self-organization of magnetic nanostructures in a semiconductor host.

  15. Evidence of Formation of Superdense Nonmagnetic Cobalt

    Science.gov (United States)

    Banu, Nasrin; Singh, Surendra; Satpati, B.; Roy, A.; Basu, S.; Chakraborty, P.; Movva, Hema C. P.; Lauter, V.; Dev, B. N.

    2017-02-01

    Because of the presence of 3d transition metals in the Earth’s core, magnetism of these materials in their dense phases has been a topic of great interest. Theory predicts a dense face-centred-cubic phase of cobalt, which would be nonmagnetic. However, this dense nonmagnetic cobalt has not yet been observed. Recent investigations in thin film polycrystalline materials have shown the formation of compressive stress, which can increase the density of materials. We have discovered the existence of ultrathin superdense nonmagnetic cobalt layers in a polycrystalline cobalt thin film. The densities of these layers are about 1.2–1.4 times the normal density of Co. This has been revealed by X-ray reflectometry experiments, and corroborated by polarized neutron reflectometry (PNR) experiments. Transmission electron microscopy provides further evidence. The magnetic depth profile, obtained by PNR, shows that the superdense Co layers near the top of the film and at the film-substrate interface are nonmagnetic. The major part of the Co film has the usual density and magnetic moment. These results indicate the possibility of existence of nonmagnetic Co in the earth’s core under high pressure.

  16. III-V/Ge MOS device technologies for low power integrated systems

    Science.gov (United States)

    Takagi, S.; Noguchi, M.; Kim, M.; Kim, S.-H.; Chang, C.-Y.; Yokoyama, M.; Nishi, K.; Zhang, R.; Ke, M.; Takenaka, M.

    2016-11-01

    CMOS utilizing high mobility III-V/Ge channels on Si substrates is expected to be one of the promising devices for high performance and low power integrated systems in the future technology nodes, because of the enhanced carrier transport properties. In addition, Tunneling-FETs (TFETs) using Ge/III-V materials are regarded as one of the most important steep slope devices for the ultra-low power applications. In this paper, we address the device and process technologies of Ge/III-V MOSFETs and TFETs on the Si CMOS platform. The channel formation, source/drain (S/D) formation and gate stack engineering are introduced for satisfying the device requirements. The plasma post oxidation to form GeOx interfacial layers is a key gate stack technology for Ge CMOS. Also, direct wafer bonding of ultrathin body quantum well III-V-OI channels, combined with Tri-gate structures, realizes high performance III-V n-MOSFETs on Si. We also demonstrate planar-type InGaAs and Ge/strained SOI TFETs. The defect-less p+-n source junction formation with steep impurity profiles is a key for high performance TFET operation.

  17. Magnetism induced by nonmagnetic dopants in zinc-blende SiC: First-principle calculations

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    Magnetism induced by the nonmagnetic dopants in the zinc-blende SiC (3C-SiC) is investigated by first-principle calculations. The atoms of the first 20 elements in the periodic table except inert gas are used to replace either Si or C atoms as dopants. We find that some nonmagnetic substitutional dopants (mainly the Group IA, Group IIA, Group IIIB, and Group VIIB elements) prefer the spin-polarized ground states with local magnetic moments. In general, the condition for obtaining the local magnetic moments and the magnetic ground state requires that the dopants are p-type and have large electronegativity difference from the neighboring host atoms. The magnetic moments can be tuned over a range between 1 μ B and 3 μ B by doping with the nonmagnetic elements. The nearest-neighbor exchange couplings J 0 between the local magnetic moments are quite large and the codoping method is proposed to increase the dopant concentration. These imply that the nonmagnetic doping in SiC may exhibit collective magnetism. Moreover, the Group IIA Mg and Ca atoms substituting the preferred Si atoms favor the ferromagnetic ground states with the half-metallic electronic properties, which suggests that Mg or Ca substitutional doping on the Si sites in SiC could be a potential route to fabricating the diluted magnetic semiconductors.

  18. The Unexpected Influence of Precursor Conversion Rate in the Synthesis of III-V Quantum Dots.

    Science.gov (United States)

    Franke, Daniel; Harris, Daniel K; Xie, Lisi; Jensen, Klavs F; Bawendi, Moungi G

    2015-11-23

    Control of quantum dot (QD) precursor chemistry has been expected to help improve the size control and uniformity of III-V QDs such as indium phosphide and indium arsenide. Indeed, experimental results for other QD systems are consistent with the theoretical prediction that the rate of precursor conversion is an important factor controlling QD size and size distribution. We synthesized and characterized the reactivity of a variety of group-V precursors in order to determine if precursor chemistry could be used to improve the quality of III-V QDs. Despite slowing down precursor conversion rate by multiple orders of magnitude, the less reactive precursors do not yield the expected increase in size and improvement in size distribution. This result disproves the widely accepted explanation for the shortcoming of current III-V QD syntheses and points to the need for a new generalizable theoretical picture for the mechanism of QD formation and growth.

  19. Design of the partial concentrator lens for III-V on Si static concentration

    Science.gov (United States)

    Araki, Kenji; Ota, Yasuyuki; Lee, Kan-Hua; Nishioka, Kensuke; Yamaguchi, Masafumi

    2017-09-01

    To compete with the flat-plate crystalline Silicon cell module, III-V on Si structure is developed. However, it is clear that the situation of the higher cost of III-V cell relative to the Silicon cell will be unchanged. Then, it is preferred concentrating III-V cell for further savings. The partial concentrator is expanding the acceptance angle despite the higher concentration ratio. It is achieved by better performance balance of on-axis and high incidence angle. The new and generalized design method of the partial concentrator was developed. The profile function was constructed by selected Zernike's polynomial considering rotational symmetry. The full conditions of the calculation including the initial value and the radial and azimuthal degree of the function were examined. It was found that the recommended radial and azimuthal degree were 12 and 12.

  20. III-V/SOI vertical cavity laser structure for 120 Gbit/s speed

    DEFF Research Database (Denmark)

    Park, Gyeong Cheol; Xue, Weiqi; Mørk, Jesper;

    2015-01-01

    Ultrashort-cavity structure for III-V/SOI vertical cavity laser with light output into a Si waveguide is proposed, enabling 17 fJ/bit efficiency or 120 Gbit/s speed. Experimentally, 27-GHz bandwidth is demonstrated at 3.5 times of threshold. © 2015 OSA.......Ultrashort-cavity structure for III-V/SOI vertical cavity laser with light output into a Si waveguide is proposed, enabling 17 fJ/bit efficiency or 120 Gbit/s speed. Experimentally, 27-GHz bandwidth is demonstrated at 3.5 times of threshold. © 2015 OSA....

  1. III-V/silicon germanium tandem solar cells on silicon substrates

    Science.gov (United States)

    Schmieder, Kenneth J.

    The development of a cost-effective high voltage tandem solar cell that can be grown directly on a silicon (Si) platform can lead to a 34% increase in efficiency over the present best monocrystalline Si laboratory device. III-V devices are known to yield some of the highest efficiencies in photovoltaics, but the high cost of lattice matched substrates and metal organic chemical vapor deposition (MOCVD) and device development make them prohibitively expensive in many markets. By utilizing silicon substrates and limiting the thickness of the III-V MOCVD material growth, this cost can be reduced. The leveraging technology of this initiative is a metamorphic silicon:germanium (SiGe) buffer between the silicon substrate and the active device layers. As developed by AmberWave Inc., it provides a low-dislocation interface for III-V nucleation and a high quality bottom cell grown by reduced pressure chemical vapor deposition (RPCVD). This research first reports on the theoretical limits of a III-V/SiGe tandem solar cell. Results will evaluate multiple III-V materials for the determination of optimal material composition to be lattice-matched with SiGe. Following this, a more complex device simulation, incorporating all major loss mechanisms, is accomplished in order to predict ideal efficiency targets and evaluate present experimental structures. Results demonstrate a robust model capable of simulating a wide range of binary and ternary III-V devices. Predictions show the capability of a tandem device operating at 32.5% 1-sun efficiency without requiring TDD improvement beyond that of the present SiGe layers. Following simulations, experimental III-V structures are grown via MOCVD and characterized, indicating successful process development for growth of III-V materials on the SiGe platform. This growth is then validated via the design and development of experimental solar device structures. Each iteration, beginning with the single-junction windowless GaAsP solar cell and

  2. EUVE Observations of Nonmagnetic Cataclysmic Variables

    Energy Technology Data Exchange (ETDEWEB)

    Mauche, C W

    2001-09-05

    The authors summarize EUVE's contribution to the study of the boundary layer emission of high accretion-rate nonmagnetic cataclysmic variables, especially the dwarf novae SS Cyg, U Gem, VW Hyi, and OY Car in outburst. They discuss the optical and EUV light curves of dwarf nova outbursts, the quasi-coherent oscillations of the EUV flux of SS Cyg, the EUV spectra of dwarf novae, and the future of EUV observations of cataclysmic variables.

  3. Hydrogen in semiconductors II

    CERN Document Server

    Nickel, Norbert H; Weber, Eicke R; Nickel, Norbert H

    1999-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition ...

  4. Fabrication and Characterization of III-V Tunnel Field-Effect Transistors for Low Voltage Logic Applications

    Science.gov (United States)

    Romanczyk, Brian R.

    With voltage scaling to reduce power consumption in scaled transistors the subthreshold swing is becoming a critical factor influencing the minimum voltage margin between the transistor on and off-states. Conventional metal-oxide-semiconductor field-effect transistors (MOSFETs) are fundamentally limited to a 60 mV/dec swing due to the thermionic emission current transport mechanism at room temperature. Tunnel field-effect transistors (TFETs) utilize band-to-band tunneling as the current transport mechanism resulting in the potential for sub-60 mV/dec subthreshold swings and have been identified as a possible replacement to the MOSFET for low-voltage logic applications. The TFET operates as a gated p-i-n diode under reverse bias where the gate electrode is placed over the intrinsic channel allowing for modulation of the tunnel barrier thickness. When the barrier is sufficiently thin the tunneling probability increases enough to allow for significant number of electrons to tunnel from the source into the channel. To date, experimental TFET reports using III-V semiconductors have failed to produce devices that combine a steep subthreshold swing with a large enough drive current to compete with scaled CMOS. This study developed the foundations for TFET fabrication by improving an established Esaki tunnel diode process flow and extending it to include the addition of a gate electrode to form a TFET. The gating process was developed using an In0.53Ga 0.57As TFET which demonstrated a minimum subthreshold slope of 100 mV/dec. To address the issue of TFET drive current an InAs/GaSb heterojunction TFET structure was investigated taking advantage of the smaller tunnel barrier height.

  5. Design and Analysis of CMOS-Compatible III-V Compound Electron-Hole Bilayer Tunneling Field-Effect Transistor for Ultra-Low-Power Applications.

    Science.gov (United States)

    Kim, Sung Yoon; Seo, Jae Hwa; Yoon, Young Jun; Lee, Ho-Young; Lee, Seong Min; Cho, Seongjae; Kang, In Man

    2015-10-01

    In this work, we design and analyze complementary metal-oxide-semiconductor (CMOS)-compatible III-V compound electron-hole bilayer (EHB) tunneling field-effect transistors (TFETs) by using two-dimensional (2D) technology computer-aided design (TCAD) simulations. A recently proposed EHB TFET exploits a bias-induced band-to-band tunneling (BTBT) across the electron-hole bilayer by an electric field from the top and bottom gates. This is in contrast to conventional planar p(+)-p(-)-n TFETs, which utilize BTBT across the source-to-channel junction. We applied III-V compound semiconductor materials to the EHB TFETs in order to enhance the current drivability and switching performance. Devices based on various compound semiconductor materials have been designed and analyzed in terms of their primary DC characteristics. In addition, the operational principles were validated by close examination of the electron concentrations and energy-band diagrams under various operation conditions. The simulation results of the optimally designed In0.533Ga0.47As EHB TFET show outstanding performance, with an on-state current (Ion) of 249.5 μA/μm, subthreshold swing (S) of 11.4 mV/dec, and threshold voltage (Vth) of 50 mV at VDS = 0.5 V. Based on the DC-optimized InGaAs EHB TFET, the CMOS inverter circuit was simulated in views of static and dynamic behaviors of the p-channel device with exchanges between top and bottom gates or between source and drain electrodes maintaining the device structure.

  6. Materials Integration and Metamorphic Substrate Engineering from Silicon to Gallium Arsenide to Indium Phosphide for Advanced III-V/Silicon Photovoltaics

    Science.gov (United States)

    Carlin, Andrew M.

    Lattice-mismatched epitaxy in the III-V compound semiconductor system based on III-AsP and related alloys are of enormous importance, and considerable research interest, for many years. The reason is straightforward if one considers the limitations placed on available materials properties for devices dictated by lattice matching to the dominant substrate technologies - Si, GaAs (and/or Ge) and InP. For III-V epitaxy, the lattice constants of these substrates have defined a generation or more of device advances since growth of heterostructures possessing the same equilibrium lattice constants as the substrate yields essentially defect-free (specifically extended defect-free) materials and devices. Removing the restriction of lattice matching to current substrate technology opens a rich spectrum of bandgaps, bandgap combinations, conduction and valence band offsets, etc., that are desirable and exploitable for advancing device technologies for new functionality and greater performance. However successful exploitation of these properties requires mitigation of a variety of extended defects that result from the lattice mismatch between substrate and epitaxial heterostructures. A well known method to achieve this solution is through the use of compositionally (lattice constant-graded) buffer interlayers, in which the equilibrium lattice constants of interlayers are slowly altered by controlled changes in layer composition so that the mismatch strain between the initial substrate and the final device layers is spread across a thickness of buffer. The research accomplished has yielded success for both lattice constant ranges Si - GaAs and GaAs - InP. For the Si - GaAs system, a three step GaP nucleation process on Si has been developed and demonstrated, which maintains total avoidance of creating coalescence-related defects such as antiphase domains and stacking faults resulting from the initial III-V/IV interfaces while reducing overall threading dislocation density by

  7. Beyond CMOS: heterogeneous integration of III-V devices, RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems.

    Science.gov (United States)

    Kazior, Thomas E

    2014-03-28

    Advances in silicon technology continue to revolutionize micro-/nano-electronics. However, Si cannot do everything, and devices/components based on other materials systems are required. What is the best way to integrate these dissimilar materials and to enhance the capabilities of Si, thereby continuing the micro-/nano-electronics revolution? In this paper, I review different approaches to heterogeneously integrate dissimilar materials with Si complementary metal oxide semiconductor (CMOS) technology. In particular, I summarize results on the successful integration of III-V electronic devices (InP heterojunction bipolar transistors (HBTs) and GaN high-electron-mobility transistors (HEMTs)) with Si CMOS on a common silicon-based wafer using an integration/fabrication process similar to a SiGe BiCMOS process (BiCMOS integrates bipolar junction and CMOS transistors). Our III-V BiCMOS process has been scaled to 200 mm diameter wafers for integration with scaled CMOS and used to fabricate radio-frequency (RF) and mixed signals circuits with on-chip digital control/calibration. I also show that RF microelectromechanical systems (MEMS) can be integrated onto this platform to create tunable or reconfigurable circuits. Thus, heterogeneous integration of III-V devices, MEMS and other dissimilar materials with Si CMOS enables a new class of high-performance integrated circuits that enhance the capabilities of existing systems, enable new circuit architectures and facilitate the continued proliferation of low-cost micro-/nano-electronics for a wide range of applications.

  8. Semiconductor lasers and herterojunction leds

    CERN Document Server

    Kressel, Henry

    2012-01-01

    Semiconductor Lasers and Heterojunction LEDs presents an introduction to the subject of semiconductor lasers and heterojunction LEDs. The book reviews relevant basic solid-state and electromagnetic principles; the relevant concepts in solid state physics; and the p-n junctions and heterojunctions. The text also describes stimulated emission and gain; the relevant concepts in electromagnetic field theory; and the modes in laser structures. The relation between electrical and optical properties of laser diodes; epitaxial technology; binary III-V compounds; and diode fabrication are also consider

  9. Graded core/shell semiconductor nanorods and nanorod barcodes

    Science.gov (United States)

    Alivisatos, A. Paul; Scher, Erik C.; Manna, Liberato

    2010-12-14

    Graded core/shell semiconductor nanorods and shaped nanorods are disclosed comprising Group II-VI, Group III-V and Group IV semiconductors and methods of making the same. Also disclosed are nanorod barcodes using core/shell nanorods where the core is a semiconductor or metal material, and with or without a shell. Methods of labeling analytes using the nanorod barcodes are also disclosed.

  10. MBE growth technology for high quality strained III-V layers

    Science.gov (United States)

    Grunthaner, Frank J. (Inventor); Liu, John K. (Inventor); Hancock, Bruce R. (Inventor)

    1992-01-01

    III-V films are grown on large automatically perfect terraces of III-V substrates which have a different lattice constant, with temperature and Group II and V arrival rates chosen to give a Group III element stable surface. The growth is pulsed to inhibit Group III metal accumulation to low temperature, and to permit the film to relax to equilibrium. The method of the invention 1) minimizes starting step density on sample surface; 2) deposits InAs and GaAs using an interrupted growth mode (0.25 to 2 mono-layers at a time); 3) maintains the instantaneous surface stoichiometry during growth (As-stable for GaAs, In-stable for InAs); and 4) uses time-resolved RHEED to achieve aspects (1)-14 (3).

  11. On the Energy Momentum in Bianchi Type I-III-V-VI0 Space-Time

    CERN Document Server

    Aygun, S; Tarhan, I; Aygun, Melis; Aygun, Sezgin; Tarhan, Ismail

    2006-01-01

    In this study, using the energy momentum definitions of Einstein, Moller, Bergmann-Thomson, Landau-Lifshitz and Papapetrou we compute the total energy-momentum distribution (due to matter and fields including gravitation) of the universe based on general Bianchi type I-III-V-VI(o) space-time and its transforms type I, III, V, VI(o) metrics, respectively. The energy-momentum densities are found exactly same for Einstein and Bergmann-Thomson definitions. The total energy and momentum is found to be zero for Bianchi types I and VI(o) space-times. These results are same as a previous works of Radinschi, Banerjee-Sen, Xulu and Aydogdu-Salti. Another point is that our study agree with previous works of Cooperstock-Israelit, Rosen, Johri et al.

  12. Nucleation and initial radius of self-catalyzed III-V nanowires

    Science.gov (United States)

    Dubrovskii, V. G.; Borie, S.; Dagnet, T.; Reynes, L.; André, Y.; Gil, E.

    2017-02-01

    We treat theoretically the initial nucleation step of self-catalyzed III-V nanowires under simultaneously deposited group III and V vapor fluxes and with surface diffusion of a group III element. Our model is capable of describing the droplet size at which the very first nanowire monolayer nucleates depending on the element fluxes and surface temperature. This size determines the initial nanowire radius in growth techniques without pre-deposition of gallium. We show that useful self-catalyzed III-V nanowires can form only under the appropriately balanced V/III flux ratios and temperatures. Such balance is required to obtain nucleation from reasonably sized droplets that are neither too small under excessive arsenic flux nor too large in the arsenic-poor conditions.

  13. Low Thermal Budget Fabrication of III-V Quantum Nanostructures on Si Substrates

    Energy Technology Data Exchange (ETDEWEB)

    Bietti, S; Somaschini, C; Sanguinetti, S; Koguchi, N [L-NESS and Dipartimento di Scienza dei Materiali, via Cozzi 53, I-20125 Milano (Italy); Isella, G; Chrastina, D; Fedorov, A, E-mail: stefano.sanguinetti@mater.unimib.i [CNISM, L-NESS and Dipartimento di Fisica, Politecnico di Milano, via Anzani 42, I-22100 Como (Italy)

    2010-09-01

    We show the possibility to integrate high quality III-V quantum nanostructures tunable in shape and emission energy on Si-Ge Virtual Substrate. Strong photoemission is observed, also at room temperature, from two different kind of GaAs quantum nanostructures fabricated on Silicon substrate. Due to the low thermal budget of the procedure used for the fabrication of the active layer, Droplet Epitaxy is to be considered an excellent candidate for implementation of optoelectronic devices on CMOS circuits.

  14. UXC55 Non-Magnetic Robot

    CERN Document Server

    Najjar, Tony

    2017-01-01

    As part of the collaboration between CMS and the Lebanese American University, we are looking into building a non-magnetic inspection rover capable of roaming around UXC55 and specifically under the detector. The robot should be specifically tailored and engineered to cope with the strong magnetic field in the cavern (300 G on average with peaks up to 1500 G) as well as other constraints such as flammability and geometry. Moreover, we are also taking part in the development of the instrumentation and wireless communication of the rover. The biggest challenge in setting up a non-magnetic rover lies in the actuation mechanism, in other words, getting it to move; motors are rotary actuators that rely on the concept of a rotor “trying to catch up” to a rotating magnetic field. We quickly realize the complication with using this popular technology; the strong field created by the CMS magnet greatly interferes with the motor, rendering it utterly stalled. Our approach, on the other hand, consists of using compl...

  15. III/V nano ridge structures for optical applications on patterned 300 mm silicon substrate

    Science.gov (United States)

    Kunert, B.; Guo, W.; Mols, Y.; Tian, B.; Wang, Z.; Shi, Y.; Van Thourhout, D.; Pantouvaki, M.; Van Campenhout, J.; Langer, R.; Barla, K.

    2016-08-01

    We report on an integration approach of III/V nano ridges on patterned silicon (Si) wafers by metal organic vapor phase epitaxy (MOVPE). Trenches of different widths (≤500 nm) were processed in a silicon oxide (SiO2) layer on top of a 300 mm (001) Si substrate. The MOVPE growth conditions were chosen in a way to guarantee an efficient defect trapping within narrow trenches and to form a box shaped ridge with increased III/V volume when growing out of the trench. Compressively strained InGaAs/GaAs multi-quantum wells with 19% indium were deposited on top of the fully relaxed GaAs ridges as an active material for optical applications. Transmission electron microcopy investigation shows that very flat quantum well (QW) interfaces were realized. A clear defect trapping inside the trenches is observed whereas the ridge material is free of threading dislocations with only a very low density of planar defects. Pronounced QW photoluminescence (PL) is detected from different ridge sizes at room temperature. The potential of these III/V nano ridges for laser integration on Si substrates is emphasized by the achieved ridge volume which could enable wave guidance and by the high crystal quality in line with the distinct PL.

  16. Broadband and omnidirectional anti-reflection layer for III/V multi-junction solar cells

    CERN Document Server

    Diedenhofen, Silke L; Haverkamp, Erik; Bauhuis, Gerard; Schermer, John; Rivas, Jaime Gómez; 10.1016/j.solmat.2012.02.022

    2012-01-01

    We report a novel graded refractive index antireflection coating for III/V quadruple solar cells based on bottom-up grown tapered GaP nanowires. We have calculated the photocurrent density of an InGaP-GaAs-InGaAsP-InGaAs solar cell with a MgF2/ZnS double layer antireflection coating and with a graded refractive index coating. The photocurrent density can be increased by 5.9 % when the solar cell is coated with a graded refractive index layer with a thickness of 1\\mu m. We propose to realize such a graded refractive index layer by growing tapered GaP nanowires on III/V solar cells. For a first demonstration of the feasibility of the growth of tapered nanowires on III/V solar cells, we have grown tapered GaP nanowires on AlInP/GaAs substrates. We show experimentally that the reflection from the nanowire coated substrate is reduced and that the transmission into the substrate is increased for a broad spectral and angular range.

  17. New III-V cell design approaches for very high efficiency. Annual subcontract report, 1 August 1991--31 July 1992

    Energy Technology Data Exchange (ETDEWEB)

    Lundstrom, M.S.; Melloch, M.R.; Lush, G.B.; Patkar, M.P.; Young, M.P. [Purdue Univ., Lafayette, IN (United States)

    1993-04-01

    This report describes to examine new solar cell desip approaches for achieving very high conversion efficiencies. The program consists of two elements. The first centers on exploring new thin-film approaches specifically designed for M-III semiconductors. Substantial efficiency gains may be possible by employing light trapping techniques to confine the incident photons, as well as the photons emitted by radiative recombination. The thin-film approach is a promising route for achieving substantial performance improvements in the already high-efficiency, single-junction, III-V cell. The second element of the research involves exploring desip approaches for achieving high conversion efficiencies without requiring extremely high-quality material. This work has applications to multiple-junction cells, for which the selection of a component cell often involves a compromise between optimum band pp and optimum material quality. It could also be a benefit manufacturing environment by making the cell`s efficiency less dependent on materialquality.

  18. Semimetal/Semiconductor Nanocomposites for Thermoelectrics

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Hong [Univ. of California, Santa Barbara, CA (United States). Materials Dept.; Burke, Peter G. [Univ. of California, Santa Barbara, CA (United States). Materials Dept.; Gossard, Arthur C. [Univ. of California, Santa Barbara, CA (United States). Materials Dept.; Zeng, Gehong [Univ. of California, Santa Barbara, CA (United States). Dept. of Electrical and Computer Engineering; Ramu, Ashok T. [Univ. of California, Santa Barbara, CA (United States). Dept. of Electrical and Computer Engineering; Bahk, Je-Hyeong [Univ. of California, Santa Barbara, CA (United States). Dept. of Electrical and Computer Engineering; Bowers, John E. [Univ. of California, Santa Barbara, CA (United States). Dept. of Electrical and Computer Engineering

    2011-04-15

    In this work, we present research on semimetal-semiconductor nanocomposites grown by molecular beam epitaxy (MBE) for thermoelectric applications. We study several different III-V semiconductors embedded with semimetallic rare earth-group V (RE-V) compounds, but focus is given here to ErSb:InxGa1-xSb as a promising p-type thermoelectric material. Nano­structures of RE-V compounds are formed and embedded within the III-V semiconductor matrix. By codoping the nanocomposites with the appropriate dopants, both n-type and p-type materials have been made for thermoelectric applications. The thermoelectric properties have been engineered for enhanced thermoelectric device performance. Segmented thermoelectric power generator modules using 50 μm thick Er-containing nanocomposites have been fabricated and measured. Research on different rare earth elements for thermoelectrics is discussed.

  19. Metal-Insulator-Semiconductor Photodetectors

    Directory of Open Access Journals (Sweden)

    Chu-Hsuan Lin

    2010-09-01

    Full Text Available The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  20. Metal-insulator-semiconductor photodetectors.

    Science.gov (United States)

    Lin, Chu-Hsuan; Liu, Chee Wee

    2010-01-01

    The major radiation of the sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  1. III-V Semiconductor Quantum Well Lasers and Related Optoelectronic Devices (On Silicon). Oxide-Defined Semiconductor Quantum Well Lasers and Optoelectrnic Devices: A1-Based III-V Native Oxides

    Science.gov (United States)

    1992-05-01

    lateral direction. guide layer. The effect of the optical waveguide is shown by the The laser fabrication begins with the deposition on the near-field...to manipulate photons around a "chip," e.g., The laser fabrication begins with the patterning of for optoelectronic integrated circuits (OEICs), a

  2. Silicon grating structures for optical fiber interfacing and III-V/silicon opto-electronic components

    Science.gov (United States)

    Roelkens, Gunther; Vermeulen, Diedrik; Li, Yanlu; Muneeb, Muhammad; Hattasan, Nannicha; Ryckeboer, Eva; Deconinck, Yannick; Van Thourhout, Dries; Baets, Roel

    2013-02-01

    In this paper, we review our work on efficient, broadband and polarization independent interfaces between a silicon-on-insulator photonic IC and a single-mode optical fiber based on grating structures. The high alignment tolerance and the fact that the optical fiber interface is out-of-plane provide opportunities for easy packaging and wafer-scale testing of the photonic IC. Next to fiber-chip interfaces we will discuss the use of silicon grating structures in III-V on silicon optoelectronic components such as integrated photodetectors and microlasers.

  3. Integrated Optical Pumping of Cr & Ti-Doped Sapphire Substrates With III-V Nitride Materials

    Science.gov (United States)

    2005-08-24

    the Cr in sapphire could also permit the construction of white light LEDs . Ultimately, an integrated III-V Nitride optical pump for Ti:Sapphire could...substrates by MOCVD. 2. Characterization of doped sapphire/ InGaN structures byPL to simulate electrical injection by laser or LED device structures Part 2 1...Cr:sapphire substrate. Solid line is the spectrum of blue and red light emitted by InGaN LED epitaxially grown on Cr:sapphire substrate. The light was collected

  4. Morphology of interior interfaces in dilute nitride III/V material systems; Morphologie innerer Grenzflaechen in verduennt stickstoffhaltigen III/V-Materialsystemen

    Energy Technology Data Exchange (ETDEWEB)

    Oberhoff, S.

    2007-12-03

    This study aims to clarify structure formation processes in dilute N-containing III/V-based material systems, using highly selective etching methods and subsequent atomic force microscopy (AFM) to expose and analyse interior interfaces. In the first part of this study it was directly proved for the first time that adding Sb during growth interruption inhibits the GI-induced structural phase transition and reduces the diffusivity on GaAs and (GaIn)(NAs) surfaces. However, applying Sb during GI does not affect the driving force of the structural phase transition. Therefore a fundamental analysis about the incorporation of Sb into GaAs, Ga(NAs) and (GaIn)(NAs) was carried out in the second part of the study. Using a combination of high resolution X-ray diffraction, transmission electron microscopy and SIMS measurements, it was verified that incorporating Sb into (GaIn)(NAs) causes an increase of the In content and a decrease of the N content. In the third part of the study, novel etching methods for the GaP-based material system Ga(NAsP) are introduced which provide the opportunity to analyse structure formation processes on interior interfaces in this material system by AFM. (orig.)

  5. Integration of photodetectors with lasers for optical interconnects using 200 mm waferscale III-V/SOI technology

    DEFF Research Database (Denmark)

    Spuesens, Thijs; Liu, Liu; Vermeulen, Diedrik;

    2011-01-01

    We demonstrate efficient photodetectors on top of a laser epitaxial structure completely fabricated using 200 mm wafer scale III-V/SOI technology enabling very dense integration of lasers and detectors for optical interconnect circuits....

  6. Study of the vertical transport in p-doped superlattices based on group III-V semiconductors

    Directory of Open Access Journals (Sweden)

    Sipahi Guilherme

    2011-01-01

    Full Text Available Abstract The electrical conductivity σ has been calculated for p-doped GaAs/Al0.3Ga0.7As and cubic GaN/Al0.3Ga0.7N thin superlattices (SLs. The calculations are done within a self-consistent approach to the k → ⋅ p → theory by means of a full six-band Luttinger-Kohn Hamiltonian, together with the Poisson equation in a plane wave representation, including exchange correlation effects within the local density approximation. It was also assumed that transport in the SL occurs through extended minibands states for each carrier, and the conductivity is calculated at zero temperature and in low-field ohmic limits by the quasi-chemical Boltzmann kinetic equation. It was shown that the particular minibands structure of the p-doped SLs leads to a plateau-like behavior in the conductivity as a function of the donor concentration and/or the Fermi level energy. In addition, it is shown that the Coulomb and exchange-correlation effects play an important role in these systems, since they determine the bending potential.

  7. [Structure and electronic properties of defects at nonlattice matched III-V semiconductor interfaces]. Progress report, 1989--90

    Energy Technology Data Exchange (ETDEWEB)

    Ast, D.G.

    1990-12-31

    Research focused on control of misfit dislocations in strained epitaxial layers of GaAs through prepatterning of the substrate. Patterning and etching trenches into GaAs substrates before epitaxial growth results in nonplanar wafer surface, which makes device fabrication more difficult. Selective ion damaging the substrate prior to growth was investigated. The question of whether the overlayer must or must not be discontinuous was addressed. The third research direction was to extend results from molecular beam epitaxially grown material to organometallic chemical vapor deposition. Effort was increased to study the patterning processes and the damage it introduces into the substrate. The research program was initiated after the discovery that 500-eV dry etching in GaAs damages the substrate much deeper than the ion range.

  8. Quasiparticle self-consistent GW theory of III-V nitride semiconductors: Bands, gap bowing, and effective masses

    DEFF Research Database (Denmark)

    Svane, Axel; Christensen, Niels Egede; Gorczyca, I.

    2010-01-01

    on the basis of the local approximation to density functional theory, although generally overestimated by 0.2–0.3 eV in comparison with experimental gap values. Details of the electronic energies and the effective masses including their pressure dependence are compared with available experimental information....... The band gap of InGaN2 is considerably smaller than what would be expected by linear interpolation implying a significant band gap bowing in InGaN alloys....

  9. Luminescence of Lanthanides and Actinides Implanted into Binary III-V semiconductors and AlGaAs

    Science.gov (United States)

    1989-12-01

    16th International Symposium on Gallium Arsenide and Related Compounds, 25-29 Sep1 1989, 1ruiz~a, agano, Japan. Refereed paper to appear in ~Uyr...valve on the cryostat and using a Lakeshore Cryogenics Model DRC - 80C digital temperature contoller with a calibrated GaAs diode and three 3 W heaters

  10. Nucleation, propagation, electronic levels and elimination of misfit dislocations in III-V semiconductor interfaces. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Watson, G.P.; Matragrano, M.

    1995-03-01

    This report discusses the following topics: strained layer defects; the structural and electronic characteristics of misfit dislocations; requirements for the growth of high quality, low defect density InGaAs strained epitaxial layers; the isolation and nucleation of misfit dislocations in strained epitaxial layers grown on patterned, ion-damaged GaAs; the effect of pattern substrate trench depth on misfit dislocation density; the thermal stability of lattice mismatched InGaAs grown on patterned GaAs; misfit dislocations in ZnSe strained epitaxial layers grown on patterned GaAs; and the measurement of deep level states caused by misfit dislocations in InGaAs/GaAs grown on patterned GaAs substrates.

  11. Epitaxial Growth, Surface, and Electronic Properties of Unconventional Semiconductors: RE-V/III-V Nanocomposites and Semiconducting Half Heusler Alloys

    Science.gov (United States)

    2014-09-01

    into my career I will also be able to ride my bicycle into work. Thank you to Professor Chris van de Walle for encouraging me to seek a greater...be expected to produce electrically active defects. As an upper bound estimate, if each stoichiometry related defect produced one carrier, a deviation...NiTiSn band gap [14]. Alternatively, Miyamoto et. al. 100 115 [158] suggest the presence of electrically active Ni-Vc swaps, which would not change the

  12. Cycloadditions to Epoxides Catalyzed by GroupIII-V Transition-Metal Complexes

    KAUST Repository

    D'Elia, Valerio

    2015-05-25

    Complexes of groupIII-V transition metals are gaining increasing importance as Lewis acid catalysts for the cycloaddition of dipolarophiles to epoxides. This review examines the latest reports, including homogeneous and heterogeneous applications. The pivotal step for the cycloaddition reactions is the ring opening of the epoxide following activation by the Lewis acid. Two modes of cleavage (C-C versus C-O) have been identified depending primarily on the substitution pattern of the epoxide, with lesser influence observed from the Lewis acid employed. The widely studied cycloaddition of CO2 to epoxides to afford cyclic carbonates (C-O bond cleavage) has been scrutinized in terms of catalytic efficiency and reaction mechanism, showing that unsophisticated complexes of groupIII-V transition metals are excellent molecular catalysts. These metals have been incorporated, as well, in highly performing, recyclable heterogeneous catalysts. Cycloadditions to epoxides with other dipolarophiles (alkynes, imines, indoles) have been conducted with scandium triflate with remarkable performances (C-C bond cleavage). © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Energy Momentum Localization for Bianchi I-III-V-VI0 Universe in Teleparallel Gravity

    CERN Document Server

    Aygun, S; Tarhan, I; Aygun, Melis; Aygun, Sezgin; Tarhan, Ismail

    2006-01-01

    In this paper, considering the tele-parallel gravity versions of the Einstein, Bergmann-Thomson and Landau-Lifshitz energy-momentum prescriptions energy and momentum distribution of the universe based on the general Bianchi type I-III-V-VI0 universe and its transforms type I, III, V, VI0 metrics, respectively which includes both the matter and gravitational fields are found. We obtain that Einstein and Bergmann-Thomson definitions of the energy-momentum complexes give the same results, while Landau-Lifshitz's energy-momentum definition does not provide same results for these type of metrics. This results are the same as a previous works of Aygun et al., the Authors investigate the same problem in general relativity by using the Einstein, Moller, Bergmann-Thomson, Landau-Lifshitz (LL) and Papapetrou's definitions. Furthermore, we show that for the Bianci type-I and type-VIo all the formulations give the same result. These results supports the viewpoints of Banerjee-Sen, Xulu and Aydogdu-Salti. Another point is...

  14. High pressure semiconductor physics I

    CERN Document Server

    Willardson, R K; Paul, William; Suski, Tadeusz

    1998-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tra...

  15. Use of 3-aminopropyltriethoxysilane deposited from aqueous solution for surface modification of III-V materials

    Energy Technology Data Exchange (ETDEWEB)

    Knorr Jr, Daniel B., E-mail: daniel.knorr.civ@mail.mil [U.S. Army Research Laboratory, Aberdeen Proving Ground, MD 21005, United States of America (United States); Williams, Kristen S. [U.S. Army Research Laboratory, Aberdeen Proving Ground, MD 21005, United States of America (United States); Baril, Neil F. [U.S. Army, RDECOM, CERDEC, NVSED, Ft. Belvoir, VA 22060, United States of America (United States); Weiland, Conan [National Institute of Standards and Technology, Gaithersburg, MD 20899, United States of America (United States); Andzelm, Jan W. [U.S. Army Research Laboratory, Aberdeen Proving Ground, MD 21005, United States of America (United States); Lenhart, Joseph L., E-mail: joseph.l.lenhart.civ@mail.mil [U.S. Army Research Laboratory, Aberdeen Proving Ground, MD 21005, United States of America (United States); Woicik, Joseph C.; Fischer, Daniel A. [National Institute of Standards and Technology, Gaithersburg, MD 20899, United States of America (United States); Tidrow, Meimei Z.; Bandara, Sumith V. [U.S. Army, RDECOM, CERDEC, NVSED, Ft. Belvoir, VA 22060, United States of America (United States); Henry, Nathan C. [U.S. Army, RDECOM, CERDEC, NVSED, Ft. Belvoir, VA 22060, United States of America (United States); Corbin Company, Alexandria, VA 22314, United States of America (United States)

    2014-11-30

    Graphical abstract: - Highlights: • HCl and citric acid showed excellent oxide removal on III/V surfaces. • Aminosilane (APTES) passivation coatings were deposited at 1–20 nm on InAs and GaSb. • These coatings showed high ionic nitrogen levels near the interface via XPS. • DFT was used to find adsorption energies of APTES with and without -OH groups. • DFT modeling showed APTES–NH{sub 3}{sup +} hydrogen abstraction to form surface -OH groups. - Abstract: Focal plane arrays of strained layer superlattices (SLSs) composed of InAs/GaSb are excellent candidates for infrared imaging, but one key factor limiting their utility is the lack of a surface passivation technique capable of protecting the mesa sidewall from degradation. Along these lines, we demonstrate the use of aqueous 3-aminopropyl triethoxysilane (APTES) deposited as a surface functionalizing agent for subsequent polymer passivation on InAs and GaSb surfaces following a HCl/citric acid procedure to remove the conductive oxide In{sub 2}O{sub 3}. Using atomic force microscopy, variable angle spectroscopic ellipsometry, X-ray photoelectron spectroscopy (XPS), near-edge X-ray absorption fine structure (NEXAFS), and modeling with density functional theory (DFT), we demonstrate that APTES films can successfully be deposited on III-V substrates by spin coating and directly compare these films to those deposited on silicon substrates. The HCl/citric acid surface preparation treatment is particularly effective at removing In{sub 2}O{sub 3} without the surface segregation of In oxides observed from use of HCl alone. However, HCl/citric acid surface treatment method does result in heavy oxidation of both Ga and Sb, accompanied by segregation of Ga oxide to the surface. Deposited APTES layer thickness did not depend on the substrate choice, and thicknesses between 1 and 20 nm were obtained for APTES solution concentrations ranging from 0.1 to 2.5 vol %. XPS results for the N1s band of APTES showed that

  16. Effect of low temperature anneals and nonthermal treatments on the properties of gap fill oxides used in SiGe and III-V devices

    Science.gov (United States)

    Ryan, E. Todd; Morin, Pierre; Madan, Anita; Mehta, Sanjay

    2016-07-01

    Silicon dioxide is used to electrically isolate CMOS devices such as fin field effect transistors by filling gaps between the devices (also known as shallow trench isolation). The gap fill oxide typically requires a high temperature anneal in excess of 1000 °C to achieve adequate electrical properties and oxide densification to make the oxide compatible with subsequent fabrication steps such as fin reveal etch. However, the transition from Si-based devices to high mobility channel materials such as SiGe and III-V semiconductors imposes more severe thermal limitations on the processes used for device fabrication, including gap fill oxide annealing. This study provides a framework to quantify and model the effect of anneal temperature and time on the densification of a flowable silicon dioxide as measured by wet etch rate. The experimental wet etch rates allowed the determination of the activation energy and anneal time dependence for oxide densification. Dopant and self-diffusion can degrade the channel material above a critical temperature. We present a model of self-diffusion of Ge and Si in SiGe materials. Together these data allowed us to map the thermal process space for acceptable oxide wet etch rate and self-diffusion. The methodology is also applicable to III-V devices, which require even lower thermal budget. The results highlight the need for nonthermal oxide densification methods such as ultraviolet (UV) and plasma treatments. We demonstrate that several plasma treatments, in place of high temperature annealing, improved the properties of flowable oxide. In addition, UV curing prior to thermal annealing enables acceptable densification with dramatically reduced anneal temperature.

  17. Nonisovalent Si-III-V and Si-II-VI alloys: Covalent, ionic, and mixed phases

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Joongoo; Park, Ji-Sang; Stradins, Pauls; Wei, Su-Huai

    2017-07-01

    Nonequilibrium growth of Si-III-V or Si-II-VI alloys is a promising approach to obtaining optically more active Si-based materials. We propose a new class of nonisovalent Si2AlP (or Si2ZnS) alloys in which the Al-P (or Zn-S) atomic chains are as densely packed as possible in the host Si matrix. As a hybrid of the lattice-matched parent phases, Si2AlP (or Si2ZnS) provides an ideal material system with tunable local chemical orders around Si atoms within the same composition and structural motif. Here, using first-principles hybrid functional calculations, we discuss how the local chemical orders affect the electronic and optical properties of the nonisovalent alloys.

  18. Effective electron mass in quantum wires of III-V, ternary and quaternary materials.

    Science.gov (United States)

    Paitya, N; Ghatak, K P

    2012-12-01

    In this paper, an attempt is made to study the effective electron mass (EEM) in Quantum wires (QWs) of III-V, ternary and quaternary materials on the basis of three and two band models of Kane within the framework of k x p formalism. It has been found, taking QWs of InAs, InSb, GaAs, Hg(1-x)Cd(x)Te and In(1-x)Ga(x)As(1-y)P(t) that the 1D EEM increases with electron concentration per unit length and decreases with increasing film thickness respectively. For ternary and quaternary materials the EEM increases with increase in alloy composition. Under certain special conditions all the results for all the 1-D materials get simplified into the well known parabolic energy bands and thus confirming the compatibility test. The results of this paper find two applications in the fields of nanoscience and technology.

  19. Use of 3-aminopropyltriethoxysilane deposited from aqueous solution for surface modification of III-V materials

    Science.gov (United States)

    Knorr, Daniel B., Jr.; Williams, Kristen S.; Baril, Neil F.; Weiland, Conan; Andzelm, Jan W.; Lenhart, Joseph L.; Woicik, Joseph C.; Fischer, Daniel A.; Tidrow, Meimei Z.; Bandara, Sumith V.; Henry, Nathan C.

    2014-11-01

    Focal plane arrays of strained layer superlattices (SLSs) composed of InAs/GaSb are excellent candidates for infrared imaging, but one key factor limiting their utility is the lack of a surface passivation technique capable of protecting the mesa sidewall from degradation. Along these lines, we demonstrate the use of aqueous 3-aminopropyl triethoxysilane (APTES) deposited as a surface functionalizing agent for subsequent polymer passivation on InAs and GaSb surfaces following a HCl/citric acid procedure to remove the conductive oxide In2O3. Using atomic force microscopy, variable angle spectroscopic ellipsometry, X-ray photoelectron spectroscopy (XPS), near-edge X-ray absorption fine structure (NEXAFS), and modeling with density functional theory (DFT), we demonstrate that APTES films can successfully be deposited on III-V substrates by spin coating and directly compare these films to those deposited on silicon substrates. The HCl/citric acid surface preparation treatment is particularly effective at removing In2O3 without the surface segregation of In oxides observed from use of HCl alone. However, HCl/citric acid surface treatment method does result in heavy oxidation of both Ga and Sb, accompanied by segregation of Ga oxide to the surface. Deposited APTES layer thickness did not depend on the substrate choice, and thicknesses between 1 and 20 nm were obtained for APTES solution concentrations ranging from 0.1 to 2.5 vol %. XPS results for the N1s band of APTES showed that the content of ionic nitrogen was high (∼50%) for the thinnest films (∼1 nm), and decreased with increasing film thickness. These results indicate that APTES can indeed be used to form a silane surface layer to cover III-V materials substrates. Such APTES silane layers may prove useful in surface passivation of these materials alone, or as surface functionalizing agents for subsequent covalent binding with polymer overlayers like polyimide.

  20. Realization of back-side heterogeneous hybrid III-V/Si DBR lasers for silicon photonics

    Science.gov (United States)

    Durel, Jocelyn; Ferrotti, Thomas; Chantre, Alain; Cremer, Sébastien; Harduin, Julie; Bernabé, Stéphane; Kopp, Christophe; Boeuf, Frédéric; Ben Bakir, Badhise; Broquin, Jean-Emmanuel

    2016-02-01

    In this paper, the simulation, design and fabrication of a back-side coupling (BSC) concept for silicon photonics, which targets heterogeneous hybrid III-V/Si laser integration is presented. Though various demonstrations of a complete SOI integration of passive and active photonic devices have been made, they all feature multi-level planar metal interconnects, and a lack of integrated light sources. This is mainly due to the conflict between the need of planar surfaces for III-V/Si bonding and multiple levels of metallization. The proposed BSC solution to this topographical problem consists in fabricating lasers on the back-side of the Si waveguides using a new process sequence. The devices are based on a hybrid structure composed of an InGaAsP MQW active area and a Si-based DBR cavity. The emitted light wavelength is accordable within a range of 20 nm around 1.31μm thanks to thermal heaters and the laser output is fiber coupled through a Grating Coupler (GC). From a manufacturing point of view, the BSC approach provides not only the advantages of allowing the use of a thin-BOX SOI instead of a thick one; but it also shifts the laser processing steps and their materials unfriendly to CMOS process to the far back-end areas of fabrication lines. Moreover, aside from solving technological integration issues, the BSC concept offers several new design opportunities for active and passive devices (heat sink, Bragg gratings, grating couplers enhanced with integrated metallic mirrors, tapers…). These building boxes are explored here theoretically and experimentally.

  1. Epitaxial growth of III-V nitrides and phase separation and ordering in indium gallium nitride alloys

    Science.gov (United States)

    Doppalapudi, Dharanipal

    The family of III-V nitrides are wide band-gap semiconductors with a broad range of opto-electronic applications in LEDs, laser diodes, UV detectors as well as high temperature/high frequency devices. Due to the lack of good quality native substrates, GaN is grown on foreign substrates that have a lattice and thermal mismatch with GaN. This results in a material with a high density of defects, which in turn adversely affects the opto-electronic properties of the epilayer. In this study, GaN films were epitaxially grown on various substrates (C-plane sapphire, A-plane sapphire, SiC and ZnO) by molecular beam epitaxy. Additionally, GaN homoepitaxy onto laterally overgrown thick GaN substrates was investigated. It was demonstrated that the polarity of the GaN film plays a major role in determining the properties of the films. The growth parameters were optimized to eliminate inversion domain boundaries, which result in domains of opposite polarity in the GaN lattice. For growth on A-plane sapphire, it was found that substrate nitridation and low temperature buffer deposition are critical in order to obtain good epitaxial growth, in spite of the relatively small mismatch between the film and substrate. A crystallographic model was developed to explain this observation. By optimizing growth parameters, GaN films with excellent structural, transport, optical and device properties were grown. The second part of this research involves growth of ternary alloys and superlattice structures, which are essential in the fabrication of many devices. It was found that the InN-GaN pseudo-binary system is not homogeneous over the entire composition range. Due to the mismatch between the tetrahedral radii of GaN and InN, InGaN alloys exhibited phase separation and long-range atomic ordering. Investigations of InxGa1-xN films grown over a wide range of compositions by XRD and TEM showed that the predominant strain relieving mechanism was phase separation in films with x > 0.2, and

  2. Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates

    Science.gov (United States)

    Ptak, Aaron Joseph; Lin, Yong; Norman, Andrew; Alberi, Kirstin

    2015-05-26

    A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such as a III-V semiconductor, on a spinel substrate using a sacrificial buffer layer, and devices such as photovoltaic cells that incorporate the semiconductor materials. The sacrificial buffer material and semiconductor materials may be deposited using lattice-matching epitaxy or coincident site lattice-matching epitaxy, resulting in a close degree of lattice matching between the substrate material and deposited material for a wide variety of material compositions. The sacrificial buffer layer may be dissolved using an epitaxial liftoff technique in order to separate the semiconductor device from the spinel substrate, and the spinel substrate may be reused in the subsequent fabrication of other semiconductor devices. The low-defect density semiconductor materials produced using this method result in the enhanced performance of the semiconductor devices that incorporate the semiconductor materials.

  3. Quantifying absolute spin polarization with non-magnetic contacts in FM/ n-GaAs heterostructures

    Science.gov (United States)

    Geppert, Chad; Wienkes, Lee; Christie, Kevin; Patel, Sahil; Palmstrøm, Chris; Crowell, Paul

    2014-03-01

    We report on a novel method of quantifying spin accumulation in Co2MnSi/ n-GaAs and Fe/ n-GaAs heterostructures using a non-magnetic probe. The presence of a non-equilibrium spin polarization generates a large electrostatic potential shift relative to the equilibrium state. This is due to the combination of (1) the parabolic (non-constant) density of states and (2) the population imbalance between the two spin sub-bands. We observe this shift as a Hanle effect in a non-local, non-magnetic semiconducting contact. Since this signal depends only on experimentally accessible parameters of the bulk semiconductor, its magnitude may be used to quantify the injected spin polarization in absolute terms. By comparison with the (smaller) spin-valve signal observed with a second ferromagnetic contact, we demonstrate that this electrostatic shift scales quadratically with spin polarization, dephases in the presence of both applied and hyperfine fields, and is observable to higher temperatures than traditional non-local measurements. Quantitative modeling allows extraction of absolute polarizations in excess of 50 % at low temperatures, and further indicates that this contribution constitutes a large fraction of the three-terminal signal observed in these devices. Supported by NSF DMR-1104951; by STARnet, a SRC program sponsored by MARCO and DARPA; and by the NSF MRSEC program.

  4. Nano-semiconductors devices and technology

    CERN Document Server

    Iniewski, Krzysztof

    2011-01-01

    With contributions from top international experts from both industry and academia, Nano-Semiconductors: Devices and Technology is a must-read for anyone with a serious interest in future nanofabrication technologies. Taking into account the semiconductor industry's transition from standard CMOS silicon to novel device structures--including carbon nanotubes (CNT), graphene, quantum dots, and III-V materials--this book addresses the state of the art in nano devices for electronics. It provides an all-encompassing, one-stop resource on the materials and device structures involved in the evolution

  5. How non-magnetic are "non-magnetic" Herbig Ae/Be stars?

    CERN Document Server

    Wade, G A; Catala, C; Bagnulo, S; Landstreet, J D; Flood, J; Böhm, T; Bouret, J -C; Donati, J -F; Folsom, C P; Grunhut, J; Silvester, J

    2007-01-01

    Our recent discovery of magnetic fields in a small number of Herbig Ae/Be stars has required that we survey a much larger sample of stars. From our FORS1 and ESPaDOnS surveys, we have acquired about 125 observations of some 70 stars in which no magnetic fields are detected. Using a Monte Carlo approach, we have performed statistical comparisons of the observed longitudinal fields and LSD Stokes V profiles of these apparently non-magnetic stars with a variety of field models. This has allowed us to derive general upper limits on the presence of dipolar fields in the sample, and to place realistic upper limits on undetected dipole fields which may be present in individual stars. This paper briefly reports the results of the statistical modeling, as well as field upper limits for individual stars of particular interest.

  6. High Efficiency Nanostructured III-V Photovoltaics for Solar Concentrator Application

    Energy Technology Data Exchange (ETDEWEB)

    Hubbard, Seth

    2012-09-12

    The High Efficiency Nanostructured III-V Photovoltaics for Solar Concentrators project seeks to provide new photovoltaic cells for Concentrator Photovoltaics (CPV) Systems with higher cell efficiency, more favorable temperature coefficients and less sensitivity to changes in spectral distribution. The main objective of this project is to provide high efficiency III-V solar cells that will reduce the overall cost per Watt for power generation using CPV systems.This work is focused both on a potential near term application, namely the use of indium arsenide (InAs) QDs to spectrally "tune" the middle (GaAs) cell of a SOA triple junction device to a more favorable effective bandgap, as well as the long term goal of demonstrating intermediate band solar cell effects. The QDs are confined within a high electric field i-region of a standard GaAs solar cell. The extended absorption spectrum (and thus enhanced short circuit current) of the QD solar cell results from the increase in the sub GaAs bandgap spectral response that is achievable as quantum dot layers are introduced into the i-region. We have grown InAs quantum dots by OMVPE technique and optimized the QD growth conditions. Arrays of up to 40 layers of strain balanced quantum dots have been experimentally demonstrated with good material quality, low residual stain and high PL intensity. Quantum dot enhanced solar cells were grown and tested under simulated one sun AM1.5 conditions. Concentrator solar cells have been grown and fabricated with 5-40 layers of QDs. Testing of these devices show the QD cells have improved efficiency compared to baseline devices without QDs. Device modeling and measurement of thermal properties were performed using Crosslight APSYS. Improvements in a triple junction solar cell with the insertion of QDs into the middle current limiting junction was shown to be as high as 29% under one sun illumination for a 10 layer stack QD enhanced triple junction solar cell. QD devices have strong

  7. Impact of strain engineering on nanoscale strained III-V PMOSFETs.

    Science.gov (United States)

    Chang, S T; Liu, Y C; Ou-Yang, H

    2012-07-01

    Stress distributions in the strained InGaAs PMOSFET with source/drain (S/D) stressors for various lengths and widths were studied with 3D stress simulations. The resulting mobility improvement was analyzed. Compressive stress along the transport direction was found to dominate the hole mobility improvement for the wide width devices. Stress along the vertical direction perpendicular to the gate oxide was found to affect the mobility the least, while stress along the width direction enhanced in the middle wide width region. The impact of channel width and length on performance improvements such as the mobility gain was analyzed using the Kubo-Greenwood formalism accounting for nonpolar hole-phonon scattering (acoustic and optical), surface roughness scattering, polar phonon scattering, alloy scattering and remote phonon scattering. The novelty of this paper is studying the impact of channel width and length on the performance of InGaAs PMOSFET such as mobility and exploring physical insight for scaling the future III-V CMOS devices.

  8. Monolithic integration of III-V nanowire with photonic crystal microcavity for vertical light emission.

    Science.gov (United States)

    Larrue, Alexandre; Wilhelm, Christophe; Vest, Gwenaelle; Combrié, Sylvain; de Rossi, Alfredo; Soci, Cesare

    2012-03-26

    A novel photonic structure formed by the monolithic integration of a vertical III-V nanowire on top of a L3 two-dimensional photonic crystal microcavity is proposed to enhance light emission from the nanowire. The impact on the nanowire spontaneous emission rate is evaluated by calculating the spontaneous emission factor β, and the material gain at threshold is used as a figure of merit of this vertical emitting nanolaser. An optimal design is identified for a GaAs nanowire geometry with r = 155 nm and L~1.1 μm, where minimum gain at threshold (gth~13×10³ cm⁻¹) and large spontaneous emission factor (β~0.3) are simultaneously achieved. Modification of the directivity of the L3 photonic crystal cavity via the band-folding principle is employed to further optimize the far-field radiation pattern and to increase the directivity of the device. These results lay the foundation for a new approach toward large-scale integration of vertical emitting nanolasers and may enable applications such as intra-chip optical interconnects.

  9. Bifunctional redox flow battery - 2. V(III)/V(II)-L-cystine(O{sub 2}) system

    Energy Technology Data Exchange (ETDEWEB)

    Wen, Y.H.; Xun, Y. [Research Institute of Chemical Defense, Beijing 100083 (China); Cheng, J.; Yang, Y.S. [Research Institute of Chemical Defense, Beijing 100083 (China); Beijing Science and Technology University, Beijing 100083 (China); Ma, P.H. [Full Cell R and D Center, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, Liaoning 116023 (China)

    2008-08-20

    A new bifunctional redox flow battery (BRFB) system, V(III)/V(II) - L-cystine(O{sub 2}), was systematically investigated by using different separators. It is shown that during charge, water transfer is significantly restricted with increasing the concentration of HBr when the Nafion 115 cation exchange membrane is employed. The same result can be obtained when the gas diffusion layer (GDL) hot-pressed separator is used. The organic electro-synthesis is directly correlated with the crossover of vanadium. When employing the anion exchange membrane, the electro-synthesis efficiency is over 96% due to a minimal crossover of vanadium. When the GDL hot-pressed separator is applied, the crossover of vanadium and water transfer are noticeably prevented and the electro-synthesis efficiency of over 99% is obtained. Those impurities such as vanadium ions and bromine can be eliminated through the purification of organic electro-synthesized products. The purified product is identified to be L-cysteic acid by IR spectrum. The BRFB shows a favorable discharge performance at a current density of 20 mA cm{sup -2}. Best discharge performance is achieved by using the GDL hot-pressed separator. The coulombic efficiency of 87% and energy efficiency of about 58% can be obtained. The cause of major energy losses is mainly associated with the cross-contamination of anodic and cathodic active electrolytes. (author)

  10. Advances in III-V based dual-band MWIR/LWIR FPAs at HRL

    Science.gov (United States)

    Delaunay, Pierre-Yves; Nosho, Brett Z.; Gurga, Alexander R.; Terterian, Sevag; Rajavel, Rajesh D.

    2017-02-01

    Recent advances in superlattice-based infrared detectors have rendered this material system a solid alternative to HgCdTe for dual-band sensing applications. In particular, superlattices are attractive from a manufacturing perspective as the epitaxial wafers can be grown with a high degree of lateral uniformity, low macroscopic defect densities (processed over the last two years. To assess the FPA performance, noise equivalent temperature difference (NETD) measurements were conducted at 80K, f/4.21 and using a blackbody range of 22°C to 32°C. For the MWIR band, the NETD was 27.44 mK with a 3x median NETD operability of 99.40%. For the LWIR band, the median NETD was 27.62 mK with a 3x median operability of 99.09%. Over the course of the VISTA program, HRL fabricated over 30 FPAs with similar NETDs and operabilities in excess of 99% for both bands, demonstrating the manufacturability and high uniformity of III-V superlattices. We will also present additional characterization results including blinkers, spatial stability, modulation transfer function and thermal cycles reliability.

  11. Proton irradiation effects on advanced digital and microwave III-V components

    Energy Technology Data Exchange (ETDEWEB)

    Hash, G.L.; Schwank, J.R.; Shaneyfelt, M.R.; Sandoval, C.E.; Connors, M.P.; Sheridan, T.J.; Sexton, F.W.; Slayton, E.M.; Heise, J.A. [Sandia National Labs., Albuquerque, NM (United States); Foster, C. [Indiana University Cyclotron Facility, Bloomington, IN (United States)

    1994-09-01

    A wide range of advanced III-V components suitable for use in high-speed satellite communication systems were evaluated for displacement damage and single-event effects in high-energy, high-fluence proton environments. Transistors and integrated circuits (both digital and MMIC) were irradiated with protons at energies from 41 to 197 MeV and at fluences from 10{sup 10} to 2 {times} 10{sup 14} protons/cm{sup 2}. Large soft-error rates were measured for digital GaAs MESFET (3 {times} 10{sup {minus}5} errors/bit-day) and heterojunction bipolar circuits (10{sup {minus}5} errors/bit-day). No transient signals were detected from MMIC circuits. The largest degradation in transistor response caused by displacement damage was observed for 1.0-{mu}m depletion- and enhancement-mode MESFET transistors. Shorter gate length MESFET transistors and HEMT transistors exhibited less displacement-induced damage. These results show that memory-intensive GaAs digital circuits may result in significant system degradation due to single-event upset in natural and man-made space environments. However, displacement damage effects should not be a limiting factor for fluence levels up to 10{sup 14} protons/cm{sup 2} [equivalent to total doses in excess of 10 Mrad(GaAs)].

  12. Laser field induced optical gain in a group III-V quantum wire

    Science.gov (United States)

    Saravanan, Subramanian; Peter, Amalorpavam John; Lee, Chang Woo

    2016-08-01

    Effect of intense high frequency laser field on the electronic and optical properties of heavy hole exciton in an InAsP/InP quantum well wire is investigated taking into consideration of the spatial confinement. Laser field induced exciton binding energies, optical band gap, oscillator strength and the optical gain in the InAs0.8P0.2/InP quantum well wire are studied. The variational formulism is applied to find the respective energies. The laser field induced optical properties are studied. The optical gain as a function of photon energy, in the InAs0.8P0.2/InP quantum wire, is obtained in the presence of intense laser field. The compact density matrix method is employed to obtain the optical gain. The results show that the 1.55 μm wavelength for the fibre optic telecommunication applications is achieved for 45 Å wire radius in the absence of laser field intensity whereas the 1.55 μm wavelength is obtained for 40 Å if the amplitude of the laser field amplitude parameter is 50 Å. The characterizing wavelength for telecommunication network is optimized when the intense laser field is applied for the system. It is hoped that the obtained optical gain in the group III-V narrow quantum wire can be applied for fabricating laser sources for achieving the preferred telecommunication wavelength.

  13. Damage in III-V compounds during focused ion beam milling.

    Science.gov (United States)

    Rubanov, S; Munroe, P R

    2005-10-01

    The damage layers generated in III-V compounds exposed to energetic gallium ions in a focused ion beam (FIB) instrument have been characterized by transmission electron microscopy (TEM). The damage on the side walls of the milled trenches is in the form of amorphous layers associated with direct amorphization from the gallium beam, rather than from redeposition of milled material. However, the damage on the bottom of the milled trenches is more complex. For InP and InAs the damage layers include the presence of crystalline phases resulting from recrystallization associated heating from the incident beam and gallium implantation. In contrast, such crystalline phases are not present in GaAs. The thicknesses of the damage layers are greater than those calculated from theoretical models of ion implantation. These differences arise because the dynamic nature of FIB milling means that the energetic ion beams pass through already damaged layers. In InP recoil phosphorus atoms also cause significant damage.

  14. Growth of Ag-seeded III-V Nanowires and TEM Characterization

    DEFF Research Database (Denmark)

    Lindberg, Anna Helmi Caroline

    This thesis deals with growth and characterization of GaAs and InAs nanowires. Today Au nanoparticle-seeding together with self-catalyzing are the dominating techniques to grow III-V nanowires with molecular beam epitaxy. In this thesis we instead investigate the possibility to use Ag as seed......) substrates as well as growths of InAs nanowires on InAs(111)B substrates. We have used a wide range of the basic growth parameters, such as temperature, As-pressure and group III- ux, in order to nd good growth conditions for the Ag-seeded nanowires. The overall growths have been evaluated with SEM and, when...... appropriate, the density and the vertical yield were obtained. The crystal structures for the grown nanowires have been investigated with TEM.We have also performed additional growths to further understand exactly how the nanowire growth proceeds as well as to understand the limitations of using Ag as a seed...

  15. Band structure effects on resonant tunneling in III-V quantum wells versus two-dimensional vertical heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Campbell, Philip M., E-mail: philip.campbell@gatech.edu [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Electronic Systems Laboratory, Georgia Tech Research Institute, Atlanta, Georgia 30332 (United States); Tarasov, Alexey; Joiner, Corey A.; Vogel, Eric M. [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Ready, W. Jud [Electronic Systems Laboratory, Georgia Tech Research Institute, Atlanta, Georgia 30332 (United States)

    2016-01-14

    Since the invention of the Esaki diode, resonant tunneling devices have been of interest for applications including multi-valued logic and communication systems. These devices are characterized by the presence of negative differential resistance in the current-voltage characteristic, resulting from lateral momentum conservation during the tunneling process. While a large amount of research has focused on III-V material systems, such as the GaAs/AlGaAs system, for resonant tunneling devices, poor device performance and device-to-device variability have limited widespread adoption. Recently, the symmetric field-effect transistor (symFET) was proposed as a resonant tunneling device incorporating symmetric 2-D materials, such as transition metal dichalcogenides (TMDs), separated by an interlayer barrier, such as hexagonal boron-nitride. The achievable peak-to-valley ratio for TMD symFETs has been predicted to be higher than has been observed for III-V resonant tunneling devices. This work examines the effect that band structure differences between III-V devices and TMDs has on device performance. It is shown that tunneling between the quantized subbands in III-V devices increases the valley current and decreases device performance, while the interlayer barrier height has a negligible impact on performance for barrier heights greater than approximately 0.5 eV.

  16. Fabrication of HfO2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS application

    Directory of Open Access Journals (Sweden)

    Molina-Aldareguia Jon

    2011-01-01

    Full Text Available Abstract Nanostructuring of ultrathin HfO2 films deposited on GaAs (001 substrates by high-resolution Lloyd's mirror laser interference nanolithography is described. Pattern transfer to the HfO2 film was carried out by reactive ion beam etching using CF4 and O2 plasmas. A combination of atomic force microscopy, high-resolution scanning electron microscopy, high-resolution transmission electron microscopy, and energy-dispersive X-ray spectroscopy microanalysis was used to characterise the various etching steps of the process and the resulting HfO2/GaAs pattern morphology, structure, and chemical composition. We show that the patterning process can be applied to fabricate uniform arrays of HfO2 mesa stripes with tapered sidewalls and linewidths of 100 nm. The exposed GaAs trenches were found to be residue-free and atomically smooth with a root-mean-square line roughness of 0.18 nm after plasma etching. PACS: Dielectric oxides 77.84.Bw, Nanoscale pattern formation 81.16.Rf, Plasma etching 52.77.Bn, Fabrication of III-V semiconductors 81.05.Ea

  17. STUDIES ON OPTICAL MODULATION OF III-V GaN AND InP BASED DDR IMPATT DIODE AT SUB-MILLIMETER WAVE FREQUENCY

    Directory of Open Access Journals (Sweden)

    Soumen Banerjee,

    2010-07-01

    Full Text Available The effect of optically illumination of III-V compound semiconductor Indium Phosphide (InP and Wurtzite phase of Gallium Nitride (Wz-GaN or -GaN based Double Drift Impatt diodes at 300 GHz (0.3 THz has been investigated. The composition of photocurrent is altered by shining light on the p+ side and n+ side of the device through optical windows; thereby giving rise to Top Mounted (TM and Flip Chip (FC structures. The current multiplication factors for lectrons (Mn and for holes (Mp are altered to study the effect of leakage current in controlling the dynamic properties of the device. The conversion efficiency and output power of -GaN Impatt at 0.3 THz are 15.47% and 6.23 W respectively at an optimum bias current density of 0.5 x 108 A/m2 while the same parameters for InP Impatt are 18.38% and 2.81 W respectively at an optimum bias current density of 8.0 x 108 A/m2. Under optical illumination of the device, the frequency shift is observed to be more upwards upon lowering of Mpthan lowering of Mn. The frequency chirping in InP and -GaN Impatt are found to be of the order of few GHz, thereby indicating their high photo-sensitiveness at Sub-millimeter or Terahertz domain.

  18. Edge Couplers with relaxed Alignment Tolerance for Pick-and-Place Hybrid Integration of III-V Lasers with SOI Waveguides

    CERN Document Server

    Romero-García, Sebastian; Merget, Florian; Shen, Bin; Witzens, Jeremy

    2013-01-01

    We report on two edge-coupling and power splitting devices for hybrid integration of III-V lasers with sub-micrometric silicon-on-insulator (SOI) waveguides. The proposed devices relax the horizontal alignment tolerances required to achieve high coupling efficiencies and are suitable for passively aligned assembly with pick-and-place tools. Light is coupled to two on-chip single mode SOI waveguides with almost identical power coupling efficiency, but with a varying relative phase accommodating the lateral misalignment between the laser diode and the coupling devices, and is suitable for the implementation of parallel optics transmitters. Experimental characterization with both a lensed fiber and a Fabry-P\\'erot semiconductor laser diode has been performed. Excess insertion losses (in addition to the 3 dB splitting) taken as the worst case over both waveguides of respectively 2 dB and 3.1 dB, as well as excellent 1 dB horizontal loss misalignment ranges of respectively 2.8 um and 3.8 um (worst case over both i...

  19. Methods for forming group III-arsenide-nitride semiconductor materials

    Science.gov (United States)

    Major, Jo S. (Inventor); Welch, David F. (Inventor); Scifres, Donald R. (Inventor)

    2002-01-01

    Methods are disclosed for forming Group III-arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

  20. Low-power optically addressed spatial light modulators using MBE-grown III-V structures

    Science.gov (United States)

    Maserjian, Joseph L.; Larsson, Anders G.

    1991-12-01

    Device approaches are investigated for O-SLMs based on MBE engineered III-V materials and structures. Strong photo-optic effects can be achieved in periodically (delta) -doped multiple quantum well (MQW) structures. The doping-defined barriers serve to separate and delay recombination of the photo-generated electron-hole pairs. One can use this photo-effect to change the internal field across the MQWs giving rise to quantum-confined Stark shift. Alternately, the photo-generated electrons can be used to occupy the quantum wells, which in turn causes exciton quenching and a shift of the absorption edge. Recent work has shown that both of these predicted photo-optic effects can indeed be achieved in such MBE engineered structures. However, these enhanced effects are still insufficient for high contrast modulation with only single or double pass absorption through active layers of practical thickness. We use the asymmetric Fabry-Perot cavity approach which permits extinction of light due to interference of light reflected from the front and back surfaces of the cavity. Modulation of the absorption in the active cavity layers unbalances the cavity and 'turns on' the reflected output signal, thereby allowing large contrast ratios. This approach is realized with an all-MBE- grown structure consisting of a GaAs/AlAs quarter-wave stack reflector grown over the GaAs substrate as the high reflectance mirror (approximately equals 0.98) and the GaAs surface as the low reflectance mirror (approximately equals 0.3). We use for our active cavities InGaAs/GaAs MQWs separated by npn (delta) -doped GaAs barriers to achieve sensitive photo-optic effect due to exciton quenching. High contrast modulation (> 60:1) is achieved with the Fabry-Perot structures using low power (write signal.

  1. Protective capping and surface passivation of III-V nanowires by atomic layer deposition

    Directory of Open Access Journals (Sweden)

    Veer Dhaka

    2016-01-01

    Full Text Available Low temperature (∼200 °C grown atomic layer deposition (ALD films of AlN, TiN, Al2O3, GaN, and TiO2 were tested for protective capping and surface passivation of bottom-up grown III-V (GaAs and InP nanowires (NWs, and top-down fabricated InP nanopillars. For as-grown GaAs NWs, only the AlN material passivated the GaAs surface as measured by photoluminescence (PL at low temperatures (15K, and the best passivation was achieved with a few monolayer thick (2Å film. For InP NWs, the best passivation (∼2x enhancement in room-temperature PL was achieved with a capping of 2nm thick Al2O3. All other ALD capping layers resulted in a de-passivation effect and possible damage to the InP surface. Top-down fabricated InP nanopillars show similar passivation effects as InP NWs. In particular, capping with a 2 nm thick Al2O3 layer increased the carrier decay time from 251 ps (as-etched nanopillars to about 525 ps. Tests after six months ageing reveal that the capped nanostructures retain their optical properties. Overall, capping of GaAs and InP NWs with high-k dielectrics AlN and Al2O3 provides moderate surface passivation as well as long term protection from oxidation and environmental attack.

  2. Protective capping and surface passivation of III-V nanowires by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Dhaka, Veer, E-mail: veer.dhaka@aalto.fi; Perros, Alexander; Kakko, Joona-Pekko; Haggren, Tuomas; Lipsanen, Harri [Department of Micro- and Nanosciences, Micronova, Aalto University, P.O. Box 13500, FI-00076 (Finland); Naureen, Shagufta; Shahid, Naeem [Research School of Physics & Engineering, Department of Electronic Materials Engineering, Australian National University, Canberra ACT 2601 (Australia); Jiang, Hua; Kauppinen, Esko [Department of Applied Physics and Nanomicroscopy Center, Aalto University, P.O. Box 15100, FI-00076 (Finland); Srinivasan, Anand [School of Information and Communication Technology, KTH Royal Institute of Technology, Electrum 229, S-164 40 Kista (Sweden)

    2016-01-15

    Low temperature (∼200 °C) grown atomic layer deposition (ALD) films of AlN, TiN, Al{sub 2}O{sub 3}, GaN, and TiO{sub 2} were tested for protective capping and surface passivation of bottom-up grown III-V (GaAs and InP) nanowires (NWs), and top-down fabricated InP nanopillars. For as-grown GaAs NWs, only the AlN material passivated the GaAs surface as measured by photoluminescence (PL) at low temperatures (15K), and the best passivation was achieved with a few monolayer thick (2Å) film. For InP NWs, the best passivation (∼2x enhancement in room-temperature PL) was achieved with a capping of 2nm thick Al{sub 2}O{sub 3}. All other ALD capping layers resulted in a de-passivation effect and possible damage to the InP surface. Top-down fabricated InP nanopillars show similar passivation effects as InP NWs. In particular, capping with a 2 nm thick Al{sub 2}O{sub 3} layer increased the carrier decay time from 251 ps (as-etched nanopillars) to about 525 ps. Tests after six months ageing reveal that the capped nanostructures retain their optical properties. Overall, capping of GaAs and InP NWs with high-k dielectrics AlN and Al{sub 2}O{sub 3} provides moderate surface passivation as well as long term protection from oxidation and environmental attack.

  3. Study of the Electronic Surface States of III-V Compounds and Silicon

    Science.gov (United States)

    1980-10-01

    elemental groiup IV semiconductors and d-metals is still lacking basically for two reasons: * Permanent address: lestituto di Fisica del Politecnico...falls at about one and a half molecular layers; thus, roughly half the emission will come from the first molecular layer and half from deeper in the...GaAs covalent bonds in order to form bulk oxides. With oxygen in the molecular ground state and the sample at room temperature (as was the case for the

  4. Gating a ferromagnetic semiconductor

    Science.gov (United States)

    Bove, A.; Altomare, F.; Kundtz, N.; Chang, A. M.; Cho, Y. J.; Liu, X.; Furdyna, J.

    2007-03-01

    Ferromagnetic semiconductors have the potential of revolutionizing the way current electronic devices work: more so, because they are compatible with current fabrication lines and can easily be integrated with today's technology. Particular interest lies in III-V Diluted Magnetic Semiconductor (DMS), where the ferromagnetism is hole-mediated and the Curie temperature can therefore be tuned by changing the concentration of free carriers. In these systems, most of the effort is currently applied toward the fabrication of devices working at room-temperature: this implies high carrier density accompanied by low mobility and short mean free path. We will report our results for a ferromagnetic 2DHG system with low carrier density (˜3.4E12 cm-2) and mobility (˜ 1000 cm^2/(Vs)), and we will discuss the effects of local gating in light of possible applications to the fabrication of ferromagnetic quantum dots. T. Dietl et al., Phys. Rev. B 63, 195205 (2001). H. Ohno et al., Nature 408, 944 (2000)

  5. Low-Cost Growth of III-V Layers on Si Using Close-Spaced Vapor Transport

    Energy Technology Data Exchange (ETDEWEB)

    Boucher, Jason W.; Greenaway, Ann L.; Ritenour, Andrew J.; Davis, Allison L.; Bachman, Benjamin F.; Aloni, Shaul; Boettcher, Shannon W.

    2015-06-14

    Close-spaced vapor transport (CSVT) uses solid precursors to deposit material at high rates and with high precursor utilization. The use of solid precursors could significantly reduce the costs associated with III-V photovoltaics, particularly if growth on Si substrates can be demonstrated. We present preliminary results of the growth of GaAs1-xPx with x ≈ 0.3 and 0.6, showing that CSVT can be used to produce III-V-V’ alloys with band gaps suitable for tandem devices. Additionally, we have grown GaAs on Si by first thermally depositing films of Ge and subsequently depositing GaAs by CSVT. Patterning the Ge into islands prevents cracking due to thermal mismatch and is useful for potential tandem structures.

  6. Developing high-performance III-V superlattice IRFPAs for defense: challenges and solutions

    Science.gov (United States)

    Zheng, Lucy; Tidrow, Meimei; Aitcheson, Leslie; O'Connor, Jerry; Brown, Steven

    2010-04-01

    The antimonide superlattice infrared detector technology program was established to explore new infrared detector materials and technology. The ultimate goal is to enhance the infrared sensor system capability and meet challenging requirements for many applications. Certain applications require large-format focal plane arrays (FPAs) for a wide field of view. These FPAs must be able to detect infrared signatures at long wavelengths, at low infrared background radiation, and with minimal spatial cross talk. Other applications require medium-format pixel, co-registered, dual-band capability with minimal spectral cross talk. Under the technology program, three leading research groups have focused on device architecture design, high-quality material growth and characterization, detector and detector array processing, hybridization, testing, and modeling. Tremendous progress has been made in the past few years. This is reflected in orders-of-magnitude reduction in detector dark-current density and substantial increase in quantum efficiency, as well as the demonstration of good-quality long-wavelength infrared FPAs. Many technical challenges must be overcome to realize the theoretical promise of superlattice infrared materials. These include further reduction in dark current density, growth of optically thick materials for high quantum efficiency, and elimination of FPA processing-related performance degradation. In addition, challenges in long-term research and development cost, superlattice material availability, FPA chip assembly availability, and industry sustainability are also to be met. A new program was established in 2009 with a scope that is different from the existing technology program. Called Fabrication of Superlattice Infrared FPA (FastFPA), this 4-year program sets its goal to establish U.S. industry capability of producing high-quality superlattice wafers and fabricating advanced FPAs. It uses horizontal integration strategy by leveraging existing III-V

  7. Modeling, Growth and Characterization of III-V and Dilute Nitride Antimonide Materials and Solar Cells

    Science.gov (United States)

    Maros, Aymeric

    III-V multijunction solar cells have demonstrated record efficiencies with the best device currently at 46 % under concentration. Dilute nitride materials such as GaInNAsSb have been identified as a prime choice for the development of high efficiency, monolithic and lattice-matched multijunction solar cells as they can be lattice-matched to both GaAs and Ge substrates. These types of cells have demonstrated efficiencies of 44% for terrestrial concentrators, and with their upright configuration, they are a direct drop-in product for today's space and concentrator solar panels. The work presented in this dissertation has focused on the development of relatively novel dilute nitride antimonide (GaNAsSb) materials and solar cells using plasma-assisted molecular beam epitaxy, along with the modeling and characterization of single- and multijunction solar cells. Nitrogen-free ternary compounds such as GaInAs and GaAsSb were investigated first in order to understand their structural and optical properties prior to introducing nitrogen. The formation of extended defects and the resulting strain relaxation in these lattice-mismatched materials is investigated through extensive structural characterization. Temperature- and power-dependent photoluminescence revealed an inhomogeneous distribution of Sb in GaAsSb films, leading to carrier localization effects at low temperatures. Tuning of the growth parameters was shown to suppress these Sb-induced localized states. The introduction of nitrogen was then considered and the growth process was optimized to obtain high quality GaNAsSb films lattice-matched to GaAs. Near 1-eV single-junction GaNAsSb solar cells were produced. The best devices used a p-n heterojunction configuration and demonstrated a current density of 20.8 mA/cm2, a fill factor of 64 % and an open-circuit voltage of 0.39 V, corresponding to a bandgap-voltage offset of 0.57 V, comparable with the state-of-the-art for this type of solar cells. Post-growth annealing

  8. Hybrid integration of III-V and silicon materials and devices

    Science.gov (United States)

    Luo, Zhongsheng

    Laser liftoff (LLO) based hybrid integration techniques including the double-transfer process and the pixel-to-point transfer process have been developed to integrate III-V photonics with silicon materials and circuitry. No degradation in the device performance has been observed using the LLO based transfer techniques. On the contrary, performance improvements in both electrical characteristics and electroluminescence (EL) output have been found for the (In,Ga)N light emitting diodes (LEDs) transferred onto Si substrate. Based on computer simulation, it is found that as much as 70% enhancement in EL output could be expected by optimizing the metal layering on the backside of the transferred LEDs. In order to understand the existing experimental data and improve controllability and damage-free transfer yield of the LLO process, a novel, comprehensive LLO model based on thermal-mechanical analysis has been proposed and developed. The LLO model has been validated in the well-studied GaN/sapphire system. By employing the LLO based transfer technique, two optoelectronic systems have been designed and demonstrated. The first one is an integrated fluorescence microsystem, which involved the integration of Cd(S,Se) bandgap filters, (In,Ga)N LEDs, Poly(dimethylsiloxane) (PDMS) microfluidic channels with a pre-fabricated Si PIN photodiode chip. Prototypes with both one color (blue LED) excitation and two-color (blue and green LED) excitation have consistently demonstrated a detection capability of as low as 1 nM fluosphere beads using Molecular Probes FluoSpheresRTM dye. Furthermore, the feasibility of multi-wavelength design has been verified using the bi-wavelength prototype. To optimize signal-to-noise ratio and detection sensitivity of the microsystem via system design, an in-depth mathematic analysis has also been performed. The second application is a zero-footprint optical metrology wafer, which relies on the reflection at the optical detection window, through which

  9. High pressure in semiconductor physics II

    CERN Document Server

    Willardson, R K; Suski, Tadeusz; Paul, William

    1998-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tra...

  10. Effective electron mass in low-dimensional semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bhattacharya, Sitangshu [Indian Institute of Science, Bangalore (India). Nano Scale Device Research Lab.; Ghatak, Kamakhya Prasad [National Institute of Technology, Agartala, Tripura West (India). Dept. of Electronics and Communication Engineering

    2013-07-01

    Provides a treatment of the effective electron mass in nanodevices. Explains changes of the band structure of optoelectronic semiconductors by intense electric fields and light waves. Gives insight into the electronic behavior in doped semiconductors and their nanostructures. Supports tuition by 200 open problems and questions. This book deals with the Effective Electron Mass (EEM) in low dimensional semiconductors. The materials considered are quantum confined non-linear optical, III-V, II-VI, GaP, Ge, PtSb2, zero-gap, stressed, Bismuth, carbon nanotubes, GaSb, IV-VI, Te, II-V, Bi2Te3, Sb, III-V, II-VI, IV-VI semiconductors and quantized III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices. The presence of intense electric field and the light waves change the band structure of optoelectronic semiconductors in fundamental ways, which have also been incorporated in the study of the EEM in quantized structures of optoelectronic compounds that control the studies of the quantum effect devices under strong fields. The importance of measurement of band gap in optoelectronic materials under strong electric field and external photo excitation has also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the EEM and the EEM in heavily doped semiconductors and their nanostructures is discussed. This book contains 200 open research problems which form the integral part of the text and are useful for both Ph. D aspirants and researchers in the fields of solid-state sciences, materials science, nanoscience and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures. The book is written for post graduate students, researchers and engineers, professionals in the fields of solid state sciences, materials science, nanoscience and technology, nanostructured materials and condensed matter physics.

  11. Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctions.

    Science.gov (United States)

    Zhang, Kun; Li, Huan-Huan; Grünberg, Peter; Li, Qiang; Ye, Sheng-Tao; Tian, Yu-Feng; Yan, Shi-Shen; Lin, Zhao-Jun; Kang, Shi-Shou; Chen, Yan-Xue; Liu, Guo-Lei; Mei, Liang-Mo

    2015-09-21

    Magnetoresistance and rectification are two fundamental physical properties of heterojunctions and respectively have wide applications in spintronics devices. Being different from the well known various magnetoresistance effects, here we report a brand new large magnetoresistance that can be regarded as rectification magnetoresistance: the application of a pure small sinusoidal alternating-current to the nonmagnetic Al/Ge Schottky heterojunctions can generate a significant direct-current voltage, and this rectification voltage strongly varies with the external magnetic field. We find that the rectification magnetoresistance in Al/Ge Schottky heterojunctions is as large as 250% at room temperature, which is greatly enhanced as compared with the conventional magnetoresistance of 70%. The findings of rectification magnetoresistance open the way to the new nonmagnetic Ge-based spintronics devices of large rectification magnetoresistance at ambient temperature under the alternating-current due to the simultaneous implementation of the rectification and magnetoresistance in the same devices.

  12. The Potts model on a Bethe lattice with nonmagnetic impurities

    Energy Technology Data Exchange (ETDEWEB)

    Semkin, S. V., E-mail: li15@rambler.ru; Smagin, V. P. [Vladivistok State University of Economics and Service (VSUES) (Russian Federation)

    2015-10-15

    We have obtained a solution for the Potts model on a Bethe lattice with mobile nonmagnetic impurities. A method is proposed for constructing a “pseudochaotic” impurity distribution by a vanishing correlation in the arrangement of impurity atoms for the nearest sites. For a pseudochaotic impurity distribution, we obtained the phase-transition temperature, magnetization, and spontaneous magnetization jumps at the phase-transition temperature.

  13. Electron-hole correlations in semiconductor quantum dots with tight-binding wave fuctions

    Science.gov (United States)

    Seungwon, L.; Jonsson, L.; Wilkins, J.; Bryant, G.; Klimeck, G.

    2001-01-01

    The electron-hole states of semiconductor quantum dots are investigated within the framework of empirical tight-binding descriptions for Si, as an example of an indirect-gap material, and InAs and CdSe as examples of typical III-V and II-VI direct-gap materials.

  14. Technological development for super-high efficiency solar cells. Technological development for crystalline compound solar cells (high-efficiency III-V tandem solar cells); Chokokoritsu taiyo denchi no gijutsu kaihatsu. Kessho kagobutsu taiyo denchi no gijutsu kaihatsu (III-V zoku kagobutsu handotai taiyo denchi no gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    Tatsuta, M. [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

    1994-12-01

    This paper reports the study results on technological development of III-V compound semiconductor solar cells in fiscal 1994. (1) On development of epitaxial growth technology of lattice mismatching systems, the optimum structure of InGaAs strain intermediate layers was studied for reducing a dislocation density by lattice mismatching of GaAs layer grown on Si substrate and difference in thermal expansion coefficient. The effect of strain layer on dislocation reduction was found only at 250dyne/cm in strain energy. Growth of GaAs layers on the Si substrate treated by hydrofluoric acid at low temperature was attempted by MBE method. As a dislocation distribution was controlled by laying different atoms at hetero-interface, the dislocation density of growing layer surfaces decreased by concentration of dislocation at hetero-interface. (2) On development of high-efficiency tandem cell structure, tunnel junction characteristics, cell formation process and optimum design method of lattice matching tandem cells were studied, while thin film cell formation was basically studied for lattice mismatching tandem cells. 45 figs., 8 tabs.

  15. Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers

    Science.gov (United States)

    Norman, Andrew

    2016-08-23

    A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such as a III-V semiconductor, on a silicon substrate using a compliant buffer layer, and devices such as photovoltaic cells that incorporate the semiconductor materials. The compliant buffer material and semiconductor materials may be deposited using coincident site lattice-matching epitaxy, resulting in a close degree of lattice matching between the substrate material and deposited material for a wide variety of material compositions. The coincident site lattice matching epitaxial process, as well as the use of a ductile buffer material, reduce the internal stresses and associated crystal defects within the deposited semiconductor materials fabricated using the disclosed method. As a result, the semiconductor devices provided herein possess enhanced performance characteristics due to a relatively low density of crystal defects.

  16. Structural and electronic properties of non-magnetic intermetallic YAuX (X = Ge and Si) in hexagonal and cubic phases

    Indian Academy of Sciences (India)

    A Lekhal; F Z Benkhelifa; S Méçabih; B Abbar; B Bouhafs

    2016-02-01

    The structural and electronic properties of non-magnetic intermetallic YAuX (X = Ge and Si) crystallized in hexagonal phase have been investigated using the full potential linearized augmented-plane wave (FPLAPW) method based on the density functional theory (DFT), within the generalized gradient approximation (GGA). The calculated lattice parameters were in good agreement with experiment. Also, the structural and electronic properties of the non-magnetic half-Heusler YAuPb compound including the artificial YAuX (X = Ge and Si) calculated in cubic phase were determined. It was found that the half-Heusler YAuPb compound presented metallic character. The results showed that YAuGe in cubic phase is a semiconductor whereas the cubic YAuSi is an isolator.

  17. Optical and electronic properties of some binary semiconductors from energy gaps

    CERN Document Server

    Tripathy, Sunil K

    2015-01-01

    II-VI and III-V tetrahedral semiconductors have significant potential for novel optoelectronic applications. In the present work, some of the optical and electronic properties of these groups of semiconductors have been studied using a recently proposed empirical relationship for refractive index from energy gap. The calculated values of these properties are also compared with those calculated from some well known relationships. From an analysis of the calculated electronic polarisability of these tetrahedral binary semiconductors from different formulations, we have proposed an empirical relation for its calculation. The predicted values of electronic polarisability of these semiconductors agree fairly well with the known values over a wide range of energy gap.

  18. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1987-01-01

    In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination.

  19. Heats of formation of binary semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, V.; Sastry, B.S.R. [Department of Electronics and Instrumentation Indian School of Mines, Dhanbad 826 004 (India)

    2005-03-01

    Heats of formation of tetrahedrally coordinated II-VI and III-V groups of binary semiconductors have been calculated using plasmon energy data. Two simple relations between plasmon energy and heats of formation have been proposed. One is based on spectroscopic model of Phillips and Van Vechten and other is based on the best-fit data of heats of formation. The calculated values of heats of formation from both the equations are compared with the experimental values and the values reported by earlier workers. A fairly good agreement has been obtained between them. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. The electronic structure of impurities in semiconductors

    CERN Multimedia

    Nylandsted larsen, A; Svane, A

    2002-01-01

    The electronic structure of isolated substitutional or interstitial impurities in group IV, IV-IV, and III-V compound semiconductors will be studied. Mössbauer spectroscopy will be used to investigate the incorporation of the implanted isotopes on the proper lattice sites. The data can be directly compared to theoretical calculations using the LMTO scheme. Deep level transient spectroscopy will be used to identify the band gap levels introduced by metallic impurities, mainly in Si~and~Si$ _{x}$Ge$_{1-x}$. \\\\ \\\\

  1. Effective Electron Mass in Low-Dimensional Semiconductors

    CERN Document Server

    Bhattacharya, Sitangshu

    2013-01-01

    This book deals with the Effective Electron Mass (EEM) in low dimensional semiconductors. The materials considered are quantum confined non-linear optical, III-V, II-VI, GaP, Ge, PtSb2, zero-gap, stressed, Bismuth, carbon nanotubes, GaSb, IV-VI, Te, II-V, Bi2Te3, Sb, III-V, II-VI, IV-VI semiconductors and quantized III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices. The presence of intense electric field and the light waves change the band structure of optoelectronic semiconductors in fundamental ways, which have also been incorporated in the study of the EEM in quantized structures of optoelectronic compounds that control the studies of the quantum effect devices under strong fields. The importance of measurement of band gap in optoelectronic materials under strong electric field and external photo excitation has also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the EEM and the EEM in heavily doped sem...

  2. Addressing the electronic properties of III-V nanowires by photoluminescence excitation spectroscopy

    Science.gov (United States)

    De Luca, M.

    2017-02-01

    Semiconductor nanowires (NWs) have been attracting an increasing interest in the scientific community. This is due to their peculiar filamentary shape and nanoscale diameter, which renders them versatile and cost-effective components of novel technological devices and also makes them an ideal platform for the investigation of a variety of fascinating physical effects. Absorption spectroscopy is a powerful and non-destructive technique able to provide information on the physical properties of the NWs. However, standard absorption spectroscopy is hard to perform in NWs, because of their small volume and the presence of opaque substrates. Here, we demonstrate that absorption can be successfully replaced by photoluminescence excitation (PLE). First, the use of polarization-resolved PLE to address the complex and highly-debated electronic band structure of wurtzite GaAs and InP NWs is shown. Then, PLE is used as a statistically-relevant method to localize the presence of separate wurtzite and zincblende NWs in the same InP sample. Finally, a variety of resonant exotic effects in the density of states of In x Ga1-x As/GaAs core/shell NWs are highlighted by high-resolution PLE. , which features invited work from the best early-career researchers working within the scope of J. Phys. D. This project is part of the Journal of Physics’ series 50th anniversary celebrations in 2017. Marta De Luca was selected by the Editorial Board of J. Phys. D as a Leader.

  3. Carrier transport in III-V quantum-dot structures for solar cells or photodetectors

    Science.gov (United States)

    Wang, Wenqi; Wang, Lu; Jiang, Yang; Ma, Ziguang; Sun, Ling; Liu, Jie; Sun, Qingling; Zhao, Bin; Wang, Wenxin; Liu, Wuming; Jia, Haiqiang; Chen, Hong

    2016-09-01

    According to the well-established light-to-electricity conversion theory, resonant excited carriers in the quantum dots will relax to the ground states and cannot escape from the quantum dots to form photocurrent, which have been observed in quantum dots without a p-n junction at an external bias. Here, we experimentally observed more than 88% of the resonantly excited photo carriers escaping from InAs quantum dots embedded in a short-circuited p-n junction to form photocurrent. The phenomenon cannot be explained by thermionic emission, tunneling process, and intermediate-band theories. A new mechanism is suggested that the photo carriers escape directly from the quantum dots to form photocurrent rather than relax to the ground state of quantum dots induced by a p-n junction. The finding is important for understanding the low-dimensional semiconductor physics and applications in solar cells and photodiode detectors. Project supported by the National Natural Science Foundation of China (Grant Nos. 11574362, 61210014, 11374340, and 11474205) and the Innovative Clean-Energy Research and Application Program of Beijing Municipal Science and Technology Commission, China (Grant No. Z151100003515001).

  4. Specific Approach for Size-Control III-V Quantum/Nano LED Fabrication for Prospective White Light Source

    Science.gov (United States)

    2007-08-10

    The Final Report Title: Specific approach for size-control III-V based quantum/nano LED fabrication for prospective white ...COVERED 14-06-2005 to 14-12-2005 4. TITLE AND SUBTITLE Size controlled GaN based quantum dot LED for the prospective white light source 5a. CONTRACT...structure LED The physical model of the PC LED for optical simulation is shown in Figure 10. The LED are composed with p-type GaN/ MQW of InGaN /GaN/ n

  5. Optimized III-V Multijunction Concentrator Solar Cells on Patterned Si and Ge Substrates: Final Technical Report, 15 September 2004--30 September 2006

    Energy Technology Data Exchange (ETDEWEB)

    Ringel, S. A.

    2008-11-01

    Goal is to demo realistic path to III-V multijunction concentrator efficiencies > 40% by substrate-engineering combining compositional grading with patterned epitaxy for small-area cells for high concentration.

  6. Identification of defects in semiconductors

    CERN Document Server

    Stavola, Michael; Weber, Eicke R; Stavola, Michael

    1998-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors.The"Willardson and Beer"Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices,Oxygen in Silicon, and others promise indeed that this traditi...

  7. A direct thin-film path towards low-cost large-area III-V photovoltaics.

    Science.gov (United States)

    Kapadia, Rehan; Yu, Zhibin; Wang, Hsin-Hua H; Zheng, Maxwell; Battaglia, Corsin; Hettick, Mark; Kiriya, Daisuke; Takei, Kuniharu; Lobaccaro, Peter; Beeman, Jeffrey W; Ager, Joel W; Maboudian, Roya; Chrzan, Daryl C; Javey, Ali

    2013-01-01

    III-V photovoltaics (PVs) have demonstrated the highest power conversion efficiencies for both single- and multi-junction cells. However, expensive epitaxial growth substrates, low precursor utilization rates, long growth times, and large equipment investments restrict applications to concentrated and space photovoltaics (PVs). Here, we demonstrate the first vapor-liquid-solid (VLS) growth of high-quality III-V thin-films on metal foils as a promising platform for large-area terrestrial PVs overcoming the above obstacles. We demonstrate 1-3 μm thick InP thin-films on Mo foils with ultra-large grain size up to 100 μm, which is ~100 times larger than those obtained by conventional growth processes. The films exhibit electron mobilities as high as 500 cm²/V-s and minority carrier lifetimes as long as 2.5 ns. Furthermore, under 1-sun equivalent illumination, photoluminescence efficiency measurements indicate that an open circuit voltage of up to 930 mV can be achieved, only 40 mV lower than measured on a single crystal reference wafer.

  8. Analysis of the Si(111) surface prepared in chemical vapor ambient for subsequent III-V heteroepitaxy

    Science.gov (United States)

    Zhao, W.; Steidl, M.; Paszuk, A.; Brückner, S.; Dobrich, A.; Supplie, O.; Kleinschmidt, P.; Hannappel, T.

    2017-01-01

    For well-defined heteroepitaxial growth of III-V epilayers on Si(111) substrates the atomic structure of the silicon surface is an essential element. Here, we study the preparation of the Si(111) surface in H2-based chemical vapor ambient as well as its atomic structure after contamination-free transfer to ultrahigh vacuum (UHV). Applying complementary UHV-based techniques, we derive a complete picture of the atomic surface structure and its chemical composition. X-ray photoelectron spectroscopy measurements after high-temperature annealing confirm a Si surface free of any traces of oxygen or other impurities. The annealing in H2 ambient leads to a monohydride surface termination, as verified by Fourier-transform infrared spectroscopy. Scanning tunneling microscopy confirms a well ordered, atomically smooth surface, which is (1 × 1) reconstructed, in agreement with low energy electron diffraction patterns. Atomic force microscopy reveals a significant influence of homoepitaxy and wet-chemical pretreatment on the surface morphology. Our findings show that wet-chemical pretreatment followed by high-temperature annealing leads to contamination-free, atomically flat Si(111) surfaces, which are ideally suited for subsequent III-V heteroepitaxy.

  9. Controlled growth of semiconductor crystals

    Science.gov (United States)

    Bourret-Courchesne, Edith D.

    1992-01-01

    A method for growth of III-V, II-VI and related semiconductor single crystals that suppresses random nucleation and sticking of the semiconductor melt at the crucible walls. Small pieces of an oxide of boron B.sub.x O.sub.y are dispersed throughout the comminuted solid semiconductor charge in the crucible, with the oxide of boron preferably having water content of at least 600 ppm. The crucible temperature is first raised to a temperature greater than the melt temperature T.sub.m1 of the oxide of boron (T.sub.m1 =723.degree. K. for boron oxide B.sub.2 O.sub.3), and the oxide of boron is allowed to melt and form a reasonably uniform liquid layer between the crucible walls and bottom surfaces and the still-solid semiconductor charge. The temperature is then raised to approximately the melt temperature T.sub.m2 of the semiconductor charge material, and crystal growth proceeds by a liquid encapsulated, vertical gradient freeze process. About half of the crystals grown have a dislocation density of less than 1000/cm.sup.2. If the oxide of boron has water content less than 600 ppm, the crucible material should include boron nitride, a layer of the inner surface of the crucible should be oxidized before the oxide of boron in the crucible charge is melted, and the sum of thicknesses of the solid boron oxide layer and liquid boron oxide layer should be at least 50 .mu.m.

  10. Advances in High-Efficiency III-V Multijunction Solar Cells

    Directory of Open Access Journals (Sweden)

    Richard R. King

    2007-01-01

    Full Text Available The high efficiency of multijunction concentrator cells has the potential to revolutionize the cost structure of photovoltaic electricity generation. Advances in the design of metamorphic subcells to reduce carrier recombination and increase voltage, wide-band-gap tunnel junctions capable of operating at high concentration, metamorphic buffers to transition from the substrate lattice constant to that of the epitaxial subcells, concentrator cell AR coating and grid design, and integration into 3-junction cells with current-matched subcells under the terrestrial spectrum have resulted in new heights in solar cell performance. A metamorphic Ga0.44In0.56P/Ga0.92In0.08As/ Ge 3-junction solar cell from this research has reached a record 40.7% efficiency at 240 suns, under the standard reporting spectrum for terrestrial concentrator cells (AM1.5 direct, low-AOD, 24.0 W/cm2, 25∘C, and experimental lattice-matched 3-junction cells have now also achieved over 40% efficiency, with 40.1% measured at 135 suns. This metamorphic 3-junction device is the first solar cell to reach over 40% in efficiency, and has the highest solar conversion efficiency for any type of photovoltaic cell developed to date. Solar cells with more junctions offer the potential for still higher efficiencies to be reached. Four-junction cells limited by radiative recombination can reach over 58% in principle, and practical 4-junction cell efficiencies over 46% are possible with the right combination of band gaps, taking into account series resistance and gridline shadowing. Many of the optimum band gaps for maximum energy conversion can be accessed with metamorphic semiconductor materials. The lower current in cells with 4 or more junctions, resulting in lower I2R resistive power loss, is a particularly significant advantage in concentrator PV systems. Prototype 4-junction terrestrial concentrator cells have been grown by metal-organic vapor-phase epitaxy, with preliminary measured

  11. Growth and structural characterization of III-V nanowires grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Dheeraj, D.L.

    2010-10-15

    Heterostructured semiconductor nanowires (NWs) have attracted considerable attention in recent years because of their potential in future nano-electronic and nano-photonic device applications. NWs are usually grown by vapor-liquid-solid (VLS) growth mechanism using techniques such as metal-organic vapor phase epitaxy, chemical beam epitaxy and molecular beam epitaxy (MBE). Of all the available techniques, MBE is known to be the technique which yields highest purity materials. In this study, the growth of GaAs NWs, GaAsSb NWs, as well as GaAs/GaAsSb axial and GaAs/AlGaAs radial heterostructured NWs on GaAs(111)B substrates by MBE is demonstrated. The structural and optical properties of the NWs grown are characterized by electron microscopy techniques such as scanning and transmission electron microscopy, and micro-photoluminescence, respectively. Firstly, the optimum growth conditions to obtain rod shaped GaAs NWs on GaAs(111)B substrates by MBE is determined. It has been found that in-addition to the V/III ratio and substrate temperature, buffer growth conditions also play an important role on the orientation of the NWs. The effect of V/III ratio, substrate temperature, and the arsenic species (As{sub 2}/As{sub 4}) on the morphology of GaAs NWs has been determined. Transmission electron microscopy (TEM) characterization of NWs revealed that GaAs in NW form exhibit wurtzite (WZ) crystal phase in contrast to zinc blende (ZB) phase adapted in its bulk form. Since WZ crystal phase is a metastable phase of GaAs, the WZ GaAs NWs often exhibit stacking faults. The stacking faults are known to be a detrimental problem, if not properly controlled. To gain more insight on the growth kinetics of GaAs NWs grown by MBE, several samples such as GaAs NWs grown for different time durations, and GaAs NWs with three GaAsSb inserts, where GaAsSb inserts acts as markers, have been grown. Interestingly, the growth rates of the GaAs segments and GaAsSb inserts were observed to vary

  12. Study on the impact of device parameter variations on performance of III-V homojunction and heterojunction tunnel FETs

    Science.gov (United States)

    Hemmat, Maedeh; Kamal, Mehdi; Afzali-Kusha, Ali; Pedram, Massoud

    2016-10-01

    In this paper, the impact of physical parameter variations on the electrical characteristics of III-V TFETs is investigated. The study is performed on the operations of two optimized ultra-thin 20 nm double-gate transistors. The two device structures are InAs homojunction TFET and InAs-GaAs0.1Sb0.9 heterojunction TFET. The operation parameters are the ON-current, OFF-current, and threshold voltage. The investigation is performed at the device level, using a device simulator and the Monte-Carlo simulation approach is exploited to extract the distribution of electrical parameters in the presence of the process variation. The results reveal that the operation of the transistor is more sensitive to the doping of the source and gate work function compared to other physical parameters. Furthermore, the heterojunction TFETs show less sensitivity to physical parameter variations compared to the homojunction ones.

  13. A heterogeneous III-V/silicon integration platform for on-chip quantum photonic circuits with single quantum dot devices

    CERN Document Server

    Davanco, Marcelo; Sapienza, Luca; Zhang, Chen-Zhao; Cardoso, Jose Vinicius De Miranda; Verma, Varun; Mirin, Richard; Nam, Sae Woo; Liu, Liu; Srinivasan, Kartik

    2016-01-01

    Photonic integration is an enabling technology for photonic quantum science, offering greater scalability, stability, and functionality than traditional bulk optics. Here, we describe a scalable, heterogeneous III-V/silicon integration platform to produce Si$_3$N$_4$ photonic circuits incorporating GaAs-based nanophotonic devices containing self-assembled InAs/GaAs quantum dots. We demonstrate pure singlephoton emission from individual quantum dots in GaAs waveguides and cavities - where strong control of spontaneous emission rate is observed - directly launched into Si$_3$N$_4$ waveguides with > 90 % efficiency through evanescent coupling. To date, InAs/GaAs quantum dots constitute the most promising solidstate triggered single-photon sources, offering bright, pure and indistinguishable emission that can be electrically and optically controlled. Si$_3$N$_4$ waveguides offer low-loss propagation, tailorable dispersion and high Kerr nonlinearities, desirable for linear and nonlinear optical signal processing d...

  14. III-V/Si Tandem Cells Utilizing Interdigitated Back Contact Si Cells and Varying Terminal Configurations: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Schnabel, Manuel; Klein, Talysa R.; Jain, Nikhil; Essig, Stephanie; Schulte-Huxel, Henning; Warren, Emily; van Hest, Maikel F. A. M.; Geisz, John; Stradins, Paul; Tamboli, Adele; Rienacker, Michael; Merkle, Agnes; Schmidt, Jan; Brendel, Rolf; Peibst, Robby

    2017-07-11

    Solar cells made from bulk crystalline silicon (c-Si) dominate the market, but laboratory efficiencies have stagnated because the current record efficiency of 26.3% is already very close to the theoretical limit of 29.4% for a single-junction c-Si cell. In order to substantially boost the efficiency of Si solar cells we have been developing stacked III-V/Si tandem cells, recently attaining efficiencies above 32% in four-terminal configuration. In this contribution, we use state-of-the-art III-V cells coupled with equivalent circuit simulations to compare four-terminal (4T) to three- and two-terminal (3T, 2T) operation. Equivalent circuit simulations are used to show that tandem cells can be operated just as efficiently using three terminals as with four terminals. However, care must be taken not to overestimate 3T efficiency, as the two circuits used to extract current interact, and a method is described to accurately determine this efficiency. Experimentally, a 4T GaInP/Si tandem cell utilizing an interdigitated back contact cell is shown, exhibiting a 4T efficiency of 31.5% and a 2T efficiency of 28.1%. In 3T configuration, it is used to verify the finding from simulation that 3T efficiency is overestimated when interactions between the two circuits are neglected. Considering these, a 3T efficiency approaching the 4T efficiency is found, showing that 3T operation is efficient, and an outlook on fully integrated high-efficiency 3T and 2T tandem cells is given.

  15. Raising the One-Sun Conversion Efficiency of III-V/Si Solar Cells to 32.8% for Two Junctions and 35.9% for Three Junctions

    Energy Technology Data Exchange (ETDEWEB)

    Tamboli, Adele C [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Geisz, John F [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Young, David L [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Steiner, Myles A [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Horowitz, Kelsey A [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Woodhouse, Michael A [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Schnabel, Manuel [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Remo, Timothy W [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Essig, Stephanie [Ecole Polytechnique Federale de Lausanne (EPFL); Allebe, Christophe [CSEM PV-Center; Barroud, Lorris [CSEM PV-Center; Descoeudres, Antoine [CSEM PV-Center; Despeisse, Matthieu [CSEM PV-Center; Ballif, Christophe [CSEM PV-Center; Ward, J. Scott [Formerly NREL

    2017-08-25

    Today's dominant photovoltaic technologies rely on single-junction devices, which are approaching their practical efficiency limit of 25-27%. Therefore, researchers are increasingly turning to multi-junction devices, which consist of two or more stacked subcells, each absorbing a different part of the solar spectrum. Here, we show that dual-junction III-V//Sidevices with mechanically stacked, independently operated III-V and Si cells reach cumulative one-sun efficiencies up to 32.8%. Efficiencies up to 35.9% were achieved when combining a GaInP/GaAs dual-junction cell with a Si single-junction cell. These efficiencies exceed both the theoretical 29.4% efficiency limit of conventional Si technology and the efficiency of the record III-V dual-junction device (32.6%), highlighting the potential of Si-based multi-junction solar cells. However, techno-economic analysis reveals an order-of-magnitude disparity between the costs for III-V//Si tandem cells and conventional Si solar cells, which can be reduced if research advances in low-cost III-V growth techniques and new substrate materials are successful.

  16. Magnetic Nanoparticles in Non-magnetic CNTs and Graphene

    Science.gov (United States)

    Kayondo, Moses; Seifu, Dereje

    Magnetic nanoparticles were embedded in non-magnetic CNTs and graphene matrix to incorporate all the advantages and the unique properties of CNTs and graphene. Composites of CNTs and graphene with magnetic nanoparticles may offer new opportunities for a wide variety of potential applications such as magnetic data storage, magnetic force microscopy tip, electromagnetic interference shields, thermally conductive films, reinforced polymer composites, transparent electrodes for displays, solar cells, gas sensors, magnetic nanofluids, and magnetically guided drug delivery systems. Magnetic nanoparticles coated CNTs can also be used as an electrode in lithium ion battery to replace graphite because of the higher theoretical capacity. Graphene nanocomposites, coated with magnetic sensitive nanoparticles, have demonstrated enhanced magnetic property. We would like to acknowledge support by NSF-MRI-DMR-1337339.

  17. Polaronic trapping in magnetic semiconductors

    Science.gov (United States)

    Raebiger, Hannes

    2012-02-01

    GaN doped with iron is an interesting candidate material for magnetic semiconductors, as p-d coupling between the localized Fe-d and extended N-p hole states is expected to facilitate long-range ferromagnetic alignment of the Fe spins [1]. This picture of extended states in GaN:Fe, however, falls apart due to a polaronic localization of the hole carriers nearby the Fe impurities. To elucidate the carrier localization in GaN:Fe and related iron doped III-V semiconductors, I present a systematic study using self-interaction corrected density-functional calculations [2]. These calculations predict three distinct scenarios. (i) Some systems do sustain extended host-like hole states, (ii) some exhibit polaronic trapping, (iii) and some exhibit carrier trapping at Fe-d orbitals. These behaviors are described in detail to give an insight as to how to distinguish them experimentally. I thank T. Fujita, C. Echeverria-Arrondo, and A. Ayuela for their collaboration.[4pt] [1] T. Dietl et al, Science, 287, 1019 (2000).[0pt] [2] S. Lany and A. Zunger, Phys. Rev. B, 80, 085202 (2009).

  18. Implicit versus explicit momentum relaxation time solution for semiconductor nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Marin, E. G., E-mail: egmarin@ugr.es; Ruiz, F. G., E-mail: franruiz@ugr.es; Godoy, A., E-mail: agodoy@ugr.es; Tienda-Luna, I. M.; Gámiz, F. [Departamento de Electrónica, Universidad de Granada, Av. Fuentenueva S/N, 18071–Granada (Spain)

    2015-07-14

    We discuss the necessity of the exact implicit Momentum Relaxation Time (MRT) solution of the Boltzmann transport equation in order to achieve reliable carrier mobility results in semiconductor nanowires. Firstly, the implicit solution for a 1D electron gas with a isotropic bandstructure is presented resulting in the formulation of a simple matrix system. Using this solution as a reference, the explicit approach is demonstrated to be inaccurate for the calculation of inelastic anisotropic mechanisms such as polar optical phonons, characteristic of III-V materials. Its validity for elastic and isotropic mechanisms is also evaluated. Finally, the implications of the MRT explicit approach inaccuracies on the total mobility of Si and III-V NWs are studied.

  19. Hybrid III-V/SOI single-mode vertical-cavity laser with in-plane emission into a silicon waveguide

    DEFF Research Database (Denmark)

    Park, Gyeong Cheol; Xue, Weiqi; Semenova, Elizaveta;

    2015-01-01

    We report a III-V-on-SOI vertical-cavity laser emitting into an in-plane Si waveguide fabricated by using CMOS-compatible processes. The fabricated laser operates at 1.54 µm with a SMSR of 33 dB and a low threshold.......We report a III-V-on-SOI vertical-cavity laser emitting into an in-plane Si waveguide fabricated by using CMOS-compatible processes. The fabricated laser operates at 1.54 µm with a SMSR of 33 dB and a low threshold....

  20. Semiconductor spintronics

    CERN Document Server

    Xia, Jianbai; Chang, Kai

    2012-01-01

    Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

  1. New insights into thorium and uranium oxo-arsenic (III/V) and oxo-phosphates (V) crystal chemistry

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Na

    2015-12-11

    The fundamental chemistry of actinides is of great interest owing to the diverse number of valence states and complex coordination chemistry of the actinides. The phases based on actinides and oxo-salt fragments have been under thorough investigation in the last decades. These compounds can be widely found in nature and they affect the migration process of actinides in nature. A better understanding of the fundamental coordination chemistry of actinide compounds with oxo-salts of group V elements is not only important for understanding the actinides behavior within the migration process but can also be used to understand actinide properties in phosphate ceramics. Concerning the radioactive issues, the less radioactive early actinides (i.e. U, Th) can be taken as modeling elements to study the crystal chemistry of the transuranic elements (Np, Pu) without the major handling problems. This can be done as Th(IV) has a very similar coordination chemistry with An(IV) and U(VI) can be chosen as a modeling element for transuranic elements in higher valence states. Therefore, a systematic research on the actinides (U, Th) bearing phases with tetrahedral oxo-anions such as phosphates and arsenates have been performed in this work. High temperature (HT) solid state reaction, High pressure high temperature (HP-HT) solid state reaction and the hydrothermal method were the methods of choice for synthesizing actinide bearing oxo-arsenic(III/V) and oxo- phosphorus(V) phases in the past three years. As a result, numerous novel compounds containing actinides were obtained. The structures of all compounds were determined using single crystal X-ray diffraction data. Raman spectroscopy, EDS, DSC and high temperature powder X-ray diffraction (HT-PXRD) measurements were implemented to characterize the chemical and physical properties of the obtained compounds. The core of this dissertation is a fundamental study of the crystal chemistry of actinides (Th, U) oxo-arsenic (III/V) and oxo

  2. Far from Equilibrium Vapour Phase Growth of Lattice Matched III-V Compound Semiconductor Interfaces: Some Basic Concepts and Monte-Carlo Computer Simulations,

    Science.gov (United States)

    motivated particularly by the special conditions and considerations of importance to molecular beam epitaxial ( MBE ) growth of interfaces between tetrahedrally...presentation of a conceptual framework for MBE growth . This coherent presentation unfolds several kinetic aspects and their finer considerations which may by...defects and impurities, the surface migration kinetics, etc. in MBE growth . (Reprints)

  3. Control de la forma, tamaño y composición de nanoestructuras de semiconductores III-V: anillos y puntos cuánticos

    OpenAIRE

    González Taboada, Alfonso

    2010-01-01

    La epitaxia de haces moleculares (MBE) es una técnica de crecimiento extremadamente versátil que permite la obtención de películas delgadas cristalinas nanoestructuradas. En particular, los puntos cuánticos (QDs) de InAs en GaAs (001) han atraído la atención de numerosos grupos de investigación durante las dos últimas décadas.1 Los niveles discretos de energía característicos de esas nanoestructuras presentan una fuerte dependencia con el tamaño, composición y morfología de las mismas. ...

  4. Multicolor (UV-IR) Photodetectors Based on Lattice-Matched 6.1 A II/VI and III/V Semiconductors

    Science.gov (United States)

    2015-08-27

    and Without Bi as a Surfactant ”, presented at 18th International MBE Conference, Flagstaff, AZ, September 8-12, 2014. 2. Z.-Y. Lin, X.-M. Shen, S...Applications”, The U.S. Workshop on the Physics and Chemistry of II-VI Materials, Seattle, November 27-29, 2012. 3. Y.-H. Zhang, “IR Detectors

  5. Wet chemical functionalization of III-V semiconductor surfaces: alkylation of gallium arsenide and gallium nitride by a Grignard reaction sequence.

    Science.gov (United States)

    Peczonczyk, Sabrina L; Mukherjee, Jhindan; Carim, Azhar I; Maldonado, Stephen

    2012-03-13

    Crystalline gallium arsenide (GaAs) (111)A and gallium nitride (GaN) (0001) surfaces have been functionalized with alkyl groups via a sequential wet chemical chlorine activation, Grignard reaction process. For GaAs(111)A, etching in HCl in diethyl ether effected both oxide removal and surface-bound Cl. X-ray photoelectron (XP) spectra demonstrated selective surface chlorination after exposure to 2 M HCl in diethyl ether for freshly etched GaAs(111)A but not GaAs(111)B surfaces. GaN(0001) surfaces exposed to PCl(5) in chlorobenzene showed reproducible XP spectroscopic evidence for Cl-termination. The Cl-activated GaAs(111)A and GaN(0001) surfaces were both reactive toward alkyl Grignard reagents, with pronounced decreases in detectable Cl signal as measured by XP spectroscopy. Sessile contact angle measurements between water and GaAs(111)A interfaces after various levels of treatment showed that GaAs(111)A surfaces became significantly more hydrophobic following reaction with C(n)H(2n-1)MgCl (n = 1, 2, 4, 8, 14, 18). High-resolution As 3d XP spectra taken at various times during prolonged direct exposure to ambient lab air indicated that the resistance of GaAs(111)A to surface oxidation was greatly enhanced after reaction with Grignard reagents. GaAs(111)A surfaces terminated with C(18)H(37) groups were also used in Schottky heterojunctions with Hg. These heterojunctions exhibited better stability over repeated cycling than heterojunctions based on GaAs(111)A modified with C(18)H(37)S groups. Raman spectra were separately collected that suggested electronic passivation by surficial Ga-C bonds at GaAs(111)A. Specifically, GaAs(111)A surfaces reacted with alkyl Grignard reagents exhibited Raman signatures comparable to those of samples treated with 10% Na(2)S in tert-butanol. For GaN(0001), high-resolution C 1s spectra exhibited the characteristic low binding energy shoulder demonstrative of surface Ga-C bonds following reaction with CH(3)MgCl. In addition, 4-fluorophenyl groups were attached and detected after reaction with C(6)H(4)FMgBr, further confirming the susceptibility of Cl-terminated GaN(0001) to surface alkylation. However, the measured hydrophobicities of alkyl-terminated GaAs(111)A and GaN(0001) were markedly distinct, indicating differences in the resultant surface layers. The results presented here, in conjunction with previous studies on GaP, show that atop Ga atoms at these crystallographically related surfaces can be deliberately functionalized and protected through Ga-C surface bonds that do not involve thiol/sulfide chemistry or gas-phase pretreatments.

  6. Nucleation, propagation, electronic levels and elimination of misfit dislocations in III-V semiconductor interfaces. Final report, September 1, 1986--August 31, 1993

    Energy Technology Data Exchange (ETDEWEB)

    Ast, D.G.; Watson, G.P.; Matragrano, M.

    1995-03-01

    Misfit dislocations in gallium arsenides, indium arsenides, and zinc selenides are discussed. The growth of strained epitaxial layers, isolation and nucleation, thermal stability, and electronic and structural characteristics of misfit dislocations are described.

  7. Self-Aligned, Extremely High Frequency III-V Metal-Oxide-Semiconductor Field-Effect Transistors on Rigid and Flexible Substrates

    Science.gov (United States)

    2012-06-29

    Goffman , M. F.; Bourgoin, J.-P. Appl. Phys. Lett. 2007, 90, 233108. (5) Nougaret, L.; Happy, H.; Dambrine, G.; Derycke, V.; Bourgoin, J.-P.; Green, A. A...Krishna, S.; Chueh, Y.-L.; Guo, J.; Javey, A. Nano Lett. 2012, 12, 2060−2066. (27) Chimot, N.; Derycke, V.; Goffman , M. F.; Bourgoin, J. P.; Happy, H

  8. Development and application of the S/PHI/nX library. First-principles calculations of thermodynamic properties of III-V semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Boeck, Sixten

    2009-09-03

    The objective of this thesis was the development and implementation of a new physics meta-language which simplifies the development of algorithms in computational materials design (CMD) significantly. (i) State-of- the-art computer science techniques have been applied or developed in this work to provide language elements to express algebraic expressions efficiently on modern computer platforms. (ii) Quantum mechanical algorithms are crucial in CMD. The new meta-language supports the Dirac notation to implement such algorithms in the native language of physicists. (iii) The language is completed by elements to express equations of motions efficiently which is required for implementing structural algorithms such as molecular dynamics. A major goal of this work was to combine an intuitive algebra/physics programming interface with high runtime performance. Therefore, a major challenge was to allow the compiler to ''understand'' the algebraic or even quantum mechanical context. Only with this knowledge the compiler can generate machine code which is (at least) as efficient as manually optimized code. This has been accomplished by deriving new techniques, such as fully automatic BLAS/LAPACK function mapping, algebra type mapping, and the application of sophisticated template techniques. Further details like memory management, efficiently exploiting the computer's level caches and arithmetic pipelines which had formerly to be addressed by physicists are in our approach entirely shifted to the compiler. With the new technique of virtual templates the compiler can now even detect the quantum mechanical context of Dirac elements. While Dirac projectors, scalar products with metrics, Dirac operators, and Dirac vectors look syntactically very similar, this technique allows the compiler to recognize these terms and generate the proper highly efficient function calls. Equations of motions can be intuitively expressed exploiting transformation pipelines which we developed in this work. In order to demonstrate the power of the this approach the full-featured plane-wave framework S/PHI/nX has been developed based on the new meta-language. The S/PHI/nX source code is remarkably short and transparent which simplifies code maintenance and the introduction of new sophisticated algorithms. Various benchmarks which have been conducted in this study compare S/PHI/nX with other state-of-the-art plane-wave packages with respect to runtime performance and accuracy. Based on these calculations we verified the general trends of phonon spectra, the location and amplitudes of the thermal anomalies of these systems. (orig.)

  9. Magneto-electrical transport through MBE-grown III-V semiconductor nanostructures. From zero- to one-dimensional type of transport

    Energy Technology Data Exchange (ETDEWEB)

    Storace, Eleonora

    2009-07-08

    From the development of the first transistor in 1947, great interest has been directed towards the technological development of semiconducting devices and the investigation of their physical properties. A very vital field within this topic focuses on the electrical transport through low-dimensional structures, where the quantum confinement of charge carriers leads to the observation of a wide variety of phenomena that, in their turn, can give an interesting insight on the fundamental properties of the structures under examination. In the present thesis, we will start analyzing zero-dimensional systems, focusing on how electrons localized onto an island can take part in the transport through the whole system; by precisely tuning the tunnel coupling strength between this island and its surroundings, we will then show how it is possible to move from a zero- to a one-dimensional system. Afterwards, the inverse path will be studied: a one-dimensional system is electrically characterized, proving itself to split up due to disorder into several zero-dimensional structures. (orig.)

  10. Semiconductor heterojunctions

    CERN Document Server

    Sharma, B L

    1974-01-01

    Semiconductor Heterojunctions investigates various aspects of semiconductor heterojunctions. Topics covered include the theory of heterojunctions and their energy band profiles, electrical and optoelectronic properties, and methods of preparation. A number of heterojunction devices are also considered, from photovoltaic converters to photodiodes, transistors, and injection lasers.Comprised of eight chapters, this volume begins with an overview of the theory of heterojunctions and a discussion on abrupt isotype and anisotype heterojunctions, along with graded heterojunctions. The reader is then

  11. Substrate-supported large-band-gap quantum spin Hall insulator based on III-V bismuth layers

    Science.gov (United States)

    Padilha, J. E.; Janotti, A.; Fazzio, A.; da Silva, A. J. R.

    2016-11-01

    We show that III-V bismuth-based two-dimensional (2D) materials grown on an anion-terminated SrTe (111) substrate are 2D topological insulators. The III-Bi layers exhibit large nontrivial band gaps, ranging from 0.15 to 0.72 eV, depending on the passivation on the top surface, i.e., using hydrogen or halogens. We find that Γ -centered Dirac helical states, protected by time-reversal symmetry, appear at the edges of nanoribbon structures made of III-Bi layers on the SrTe substrate. The nontrivial character of the band gap is also determined by calculations of the Z2 invariant. We also find that the topological phase is maintained in the ultrathin quantum well heterostructures SrTe/III-Bi/SrTe, i.e., when the 2D materials are sandwiched between SrTe along the [111] direction, opening a new route for the fabrication of nanostructured devices based on 2D quantum spin Hall insulators.

  12. Interface simulation of strained and non-abrupt III-V quantum wells. Part 1: band profile calculation

    Science.gov (United States)

    Lamberti, C.

    1996-01-01

    This work presents a program, based on the Van de Walle-Martin model solid theory, able to compute the most important physical quantities of any In 1- xGa xAs yP 1- y quaternary epitaxially strained growth on any In 1- zGa zAs wP 1- w hypothetical substrate. The adopted interface-band alignment procedure is extensively described. The effect of strain on several examples of ideal heterostructures characterized by abrupt interfaces is discussed in detail. Furthermore, the problem of a composition gradient spread over some monolayers at the interfaces of III-V quantum wells and superlattices, due to the technological problems in group V switches in the present epitaxial techniques is treated extensively. The interface layers are thus non-intentionally strained on the substrate lattice parameter causing a local change in the bands profile along the growth direction. The differences between an ideal rectangular potential and the real profile are shown. The output files of this program consist in the band profiles for electrons, heavy and light holes, which will be used by the program PLSIMUL (described in a subsequent article) to compute the corresponding quantized levels to be compared with experimental 4 K photoluminescence data.

  13. III-V tri-gate quantum well MOSFET: Quantum ballistic simulation study for 10 nm technology and beyond

    Science.gov (United States)

    Datta, Kanak; Khosru, Quazi D. M.

    2016-04-01

    In this work, quantum ballistic simulation study of a III-V tri-gate MOSFET has been presented. At the same time, effects of device parameter variation on ballistic, subthreshold and short channel performance is observed and presented. The ballistic simulation result has also been used to observe the electrostatic performance and Capacitance-Voltage characteristics of the device. With constant urge to keep in pace with Moore's law as well as aggressive scaling and device operation reaching near ballistic limit, a full quantum transport study at 10 nm gate length is necessary. Our simulation reveals an increase in device drain current with increasing channel cross-section. However short channel performance and subthreshold performance get degraded with channel cross-section increment. Increasing device cross-section lowers threshold voltage of the device. The effect of gate oxide thickness on ballistic device performance is also observed. Increase in top gate oxide thickness affects device performance only upto a certain value. The thickness of the top gate oxide however shows no apparent effect on device threshold voltage. The ballistic simulation study has been further used to extract ballistic injection velocity of the carrier and ballistic carrier mobility in the channel. The effect of device dimension and gate oxide thickness on ballistic velocity and effective carrier mobility is also presented.

  14. Deep in situ dry-etch monitoring of III-V multilayer structures using laser reflectometry and reflectivity modeling

    CERN Document Server

    Moussa, H; Meriadec, C; Manin, L; Sagnes, I; Raj, R

    2002-01-01

    Deep reactive ion etching of III-V multilayer structures is an important issue for long wavelength vertical cavity surface emitting laser (VCSELs) where full laser structures are usually very thick. Test etchings were performed on GaAs/Al sub x Ga sub 1 sub - sub x As Bragg mirror structures and monitored using laser reflectometry at 651.4 nm. In order to perform very deep etching, up to 9 mu m, we designed and fabricated a special two-level mask made up of a thick nitride layer and a thin nickel layer. The etching rate is a complex function of many parameters and may change from run to run for similar structures. Therefore, it is important to have a method to control accurately the process in situ by continuously matching, experimental curves with the results of the reflectivity modeling. Here, we present a model, based on the Abeles matrix method, of the normal incidence reflectivity of a multilayer stack as a function of etch depth. Comparison between the model and the observed reflectivity variation durin...

  15. Techno-Economic Analysis of Three Different Substrate Removal and Reuse Strategies for III-V Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Ward, J. Scott; Remo, Timothy; Horowitz, Kelsey; Woodhouse, Michael; Sopori, Bhushan; VanSant, Kaitlyn; Basore, Paul

    2016-09-01

    The high cost of wafers suitable for epitaxial deposition of III-V solar cells has been a primary barrier to widespread use of these cells in low-concentration and one-sun terrestrial solar applications. A possible solution is to reuse the substrate many times, thus spreading its cost across many cells. We performed a bottom-up techno-economic analysis of three different strategies for substrate reuse in high-volume manufacturing: epitaxial lift-off, spalling, and the use of a porous germanium release layer. The analysis shows that the potential cost reduction resulting from substrate reuse is limited in all three strategies--not by the number of reuse cycles achievable, but by the costs that are incurred in each cycle to prepare the substrate for another epitaxial deposition. The dominant substrate-preparation cost component is different for each of the three strategies, and the cost-ranking of these strategies is subject to change if future developments substantially reduce the cost of epitaxial deposition.

  16. Error-free Dispersion-uncompensated Transmission at 20 Gb/s over SSMF using a Hybrid III-V/SOI DML with MRR Filtering

    DEFF Research Database (Denmark)

    Cristofori, Valentina; Kamchevska, Valerija; Ding, Yunhong

    2016-01-01

    Error-free 20-Gb/s directly-modulated transmission is achieved by enhancing the dispersion tolerance of a III-V/SOI DFB laser with a silicon micro-ring resonator. Low (∼0.4 dB) penalty compared to back-to-back without ring is demonstrated after 5-km SSMF....

  17. Colloidal self assembly of non-magnetic particles in magnetic nanofluid

    Science.gov (United States)

    Jadav, Mudra; Patel, Rajesh

    2015-06-01

    Here we present a technique using magnetic nanofluid to induce bidispersed suspension of nonmagnetic particles to assemble into colloidal chain, triangle, rectangle, ring-flower configurations. By changing the amplitude and direction of the magnetic field, we could tune the structure of nonmagnetic particles in magnetic nanofluid. The structures are assembled using magneto static interactions between effectively nonmagnetic particles dispersed in magnetizable magnetic nanofluid. The assembly of complex structures out of simple colloidal building blocks is of practical interest in photonic crystals and DNA biosensors.

  18. Colloidal self assembly of non-magnetic particles in magnetic nanofluid

    Energy Technology Data Exchange (ETDEWEB)

    Jadav, Mudra; Patel, Rajesh, E-mail: rjp@mkbhavuni.edu.in, E-mail: rpat7@yahoo.co [Department of Physics, Maharaja Krishnakumarsinhji Bhavnagar University, Bhavnagar-364002 (India)

    2015-06-24

    Here we present a technique using magnetic nanofluid to induce bidispersed suspension of nonmagnetic particles to assemble into colloidal chain, triangle, rectangle, ring-flower configurations. By changing the amplitude and direction of the magnetic field, we could tune the structure of nonmagnetic particles in magnetic nanofluid. The structures are assembled using magneto static interactions between effectively nonmagnetic particles dispersed in magnetizable magnetic nanofluid. The assembly of complex structures out of simple colloidal building blocks is of practical interest in photonic crystals and DNA biosensors.

  19. Quantum anomalous Hall effect in stanene on a nonmagnetic substrate

    Science.gov (United States)

    Zhang, Huisheng; Zhou, Tong; Zhang, Jiayong; Zhao, Bao; Yao, Yugui; Yang, Zhongqin

    2016-12-01

    Since the quantum anomalous Hall (QAH) effect was realized in magnetic topological insulators, research on the effect has become a hot topic. The very harsh realizing requirements of the effect in experiments, however, hinder its practical applications. Based on ab initio methods, we find that nonmagnetic Pb I2 films are ideal substrates for the two-dimensional honeycomb stanene. The QAH effect with a pretty large band gap (up to 90 meV) can be achieved in the functionalized stanene /Pb I2 heterostructure. Despite van der Waals interactions in the heterostructure, band inversions are found to be happening between Sn (s and px ,y ) and Pb (px ,y) orbitals, playing a key role in determining the nontrivial topology and the large band gap of the system. Having no magnetic atoms is imperative to triggering the QAH effect. A very stable rudimentary device having QAH effects is proposed based on the Sn /Pb I2 heterostructure. Our results demonstrate that QAH effects can be easily realized in the Sn /Pb I2 heterostructures in experiments.

  20. Passivation of electrically active centers by Hydrogen and Lithium in Semiconductors

    CERN Multimedia

    2002-01-01

    The hyperfine technique of Perturbed Angular Correlation Spectroscopy (PAC) has proven to be excellently suited for the microscopic investigation of impurity complexes in semiconductors. But this method is seriously limited by the small number of chemically different isotopes which are suitable for PAC measurements and represent electrically active centers in semiconductors. This bottleneck can be widely overcome by the ISOLDE facility which provides a great variety of shortliving PAC isotopes. The probe atom $^{111m}$Cd, provided by ISOLDE opened the first successful access to PAC investigations of III-V compounds and enabled also the first PAC experiments on double acceptors in silicon and germamum. \\\\ \\\\ At the new ISOLDE facility our experiments were concentrated on the passivation of electrically active centres by hydrogen and lithium in Si, Ge and III-V compounds. Experiments on $^{111m}$Cd in Ge revealed the formation of two different acceptor hydrogen and two different acceptor lithium complexes respe...

  1. Movable high Q nanoresonators realized by semiconductor nanowires on a Si photonic crystal platform

    CERN Document Server

    Birowosuto, M D; Zhang, G; Tateno, K; Kuramochi, E; Taniyama, H; Takiguchi, M; Notomi, M

    2014-01-01

    Subwavelength semiconductor nanowires have recently attracted interest for photonic applications because they possess various unique optical properties and offer great potential for miniaturizing devices. However, realizing tight light confinement or efficient coupling with photonic circuits is not straightforward and remains a challenge. Here we show that a high Q nanocavity can be created by placing a single III/V semiconductor nanowire with a diameter of under 100 nm in a grooved waveguide in a Si photonic crystal, by means of nanoprobe manipulation. We observe very fast spontaneous emission (91 ps) from nanowires accelerated by the strong Purcell enhancement in nanocavities, which proves that very strong light confinement can be achieved. Furthermore, this system enables us to move the nanocavity anywhere along the waveguide. This configuration provides a significant degree of flexibility in integrated photonics and permits the addition and displacement of various functionalities of III/V nanocavity devic...

  2. Three-Phonon Phase Space as an Indicator of the Lattice Thermal Conductivity in Semiconductors

    Science.gov (United States)

    Lindsay, L.; Broido, D. A.

    2007-03-01

    The room temperature lattice thermal conductivity of many semiconductors is limited primarily by three-phonon scattering processes arising from the anharmonicity of the interatomic potential. We employ an adiabatic bond charge model [1,2] for the phonon dispersions to calculate the phase space for three-phonon scattering events of several group IV and III-V semiconductors. We find that the amount of phase space available for this scattering in materials varies inversely with their measured thermal conductivities. Anomalous behavior occurs in III-V materials having large mass differences between cation and anion, which we explain in terms of the severely restricted three-phonon phase space arising from the large gap between acoustic and optic phonon branches. [1] W. Weber, Physical Review B 15, 4789 (1977). [2] K. C. Rustagi and W. Weber, Solid State Communications 18, 673 (1976).

  3. EDITORIAL: The 21st Nordic Semiconductor Meeting

    Science.gov (United States)

    2006-09-01

    This Topical Issue contains works presented at the 21st Nordic Semiconductor Meeting (21NSM) held at Sundvolden, Norway, 18-19 August 2005. The institutions supporting 21NSM were: University of Oslo, SINTEF, the Norwegian Defense Research Establishment and Vestfold University College. The Nordic Semiconductor Meeting has become an international forum that has been held every other year in a relay fashion in Denmark, Finland, Iceland, Norway and Sweden. The focus of the meeting has been on original research and science being carried out on semiconductor materials, devices and systems. Reports on industrial activity have usually been featured at the meetings. The topics have ranged from fundamental research on point defects in a semiconductor to system architecture of semiconductor electronic devices. For the last five meetings the proceedings have been printed in a dedicated volume of Physica Scripta in the Topical Issue series. The papers in this Topical Issue have undergone critical peer review and we wish to thank the reviewers and the authors for their cooperation, which has been instrumental in meeting the expected high standards of the series. The range of topics covered by this volume is broad, reflecting the call for papers; most of the papers have an element of materials science and the largest portion of these deal with other semiconductor materials other than silicon. The 21NSM was supported by the following sponsors: Renewable Energy Corporation (REC), EMF III-V Innovations (EMF), and the Nordic Research Board (NordForsk). Terje G Finstad Department of Physics, University of Oslo, Norway Andrej Y Kuznetsov and Bengt G Svensson Centre for Materials Science and Nanotechnology, University of Oslo, Norway

  4. Novel Approaches to High-Efficiency III-V Nitride Heterostructure Emitters for Next-Generation Lighting Applications

    Energy Technology Data Exchange (ETDEWEB)

    Russell Dupuis

    2007-06-30

    We report research activities and technical progress on the development of high-efficiency long wavelength ({lambda} {approx} 540nm) green light emitting diodes which covers whole years of the three-year program 'Novel approaches to high-efficiency III-V nitride heterostructure emitters for next-generation lighting applications'. The research activities were focused on the development of p-type layer that has less/no detrimental thermal annealing effect on as well as excellent structural and electrical properties and the development of green LED active region that has superior luminescence quality for {lambda}{approx}540nm green LEDs. We have also studied (1) the thermal annealing effect on blue and green LED active region during the p-type layer growth; (2) the effect of growth parameters and structural factors for LED active region on electroluminescence properties; (3) the effect of substrates and orientation on electrical and electro-optical properties of green LEDs. As a progress highlight, we obtained green-LED-active-region-friendly In{sub 0.04}Ga{sub 0.96}N:Mg exhibiting low resistivity with higher hole concentration (p=2.0 x 10{sup 18} cm{sup -3} and a low resistivity of 0.5 {omega}-cm) and improved optical quality green LED active region emitting at {approx}540nm by electroluminescence. The LEDs with p-InGaN layer can act as a quantum-confined Stark effect mitigation layer by reducing strain in the QW. We also have achieved (projected) peak IQE of {approx}25% at {lambda}{approx}530 nm and of {approx}13% at {lambda}{approx}545 nm. Visible LEDs on a non-polar substrate using (11-20) {alpha}-plane bulk substrates. The absence of quantum-confined Stark effect was confirmed but further improvement in electrical and optical properties is required.

  5. Novel Approaches to High-Efficiency III-V Nitride Heterostructure Emitters for Next-Generation Lighting Applications

    Energy Technology Data Exchange (ETDEWEB)

    Russell D. Dupuis

    2004-09-30

    We report research activities and technical progress on the development of high-efficiency long wavelength ({lambda} {approx} 540nm) green light emitting diodes which covers the first year of the three-year program ''Novel approaches to high-efficiency III-V nitride heterostructure emitters for next-generation lighting applications''. The first year activities were focused on the installation, set-up, and use of advanced equipment for the metalorganic chemical vapor deposition growth of III-nitride films and the characterization of these materials (Task 1) and the design, fabrication, testing of nitride LEDs (Task 4). As a progress highlight, we obtained improved quality of {approx} 2 {micro}m-thick GaN layers (as measured by the full width at half maximum of the asymmetric (102) X-ray diffraction peak of less than 350 arc-s) and higher p-GaN:Mg doping level (free hole carrier higher than 1E18 cm{sup -3}). Also in this year, we have developed the growth of InGaN/GaN active layers for long-wavelength green light emitting diodes, specifically, for emission at {lambda} {approx} 540nm. The effect of the Column III precursor (for Ga) and the post-growth thermal annealing effect were also studied. Our LED device fabrication process was developed and initially optimized, especially for low-resistance ohmic contacts for p-GaN:Mg layers, and blue-green light emitting diode structures were processed and characterized.

  6. Novel Approaches to High-Efficiency III-V Nitride Heterostructure Emitters for Next-Generation Lighting Applications

    Energy Technology Data Exchange (ETDEWEB)

    Russell D. Dupuis

    2006-01-01

    We report research activities and technical progress on the development of high-efficiency long wavelength ({lambda} {approx} 540nm) green light emitting diodes which covers the second year of the three-year program ''Novel approaches to high-efficiency III-V nitride heterostructure emitters for next-generation lighting applications''. The second year activities were focused on the development of p-type layer that has less/no detrimental thermal annealing effect on green LED active region as well as excellent structural and electrical properties and the development of green LED active region that has superior luminescence quality for {lambda} {approx}540nm green LEDs. We have also studied the thermal annealing effect on blue and green LED active region during the p-type layer growth. As a progress highlight, we obtained green-LED-active-region-friendly In{sub 0.04}Ga{sub 0.96}N:Mg exhibiting low resistivity with higher hole concentration (p=2.0 x 10{sup 18} cm{sup -3} and a low resistivity of 0.5 {Omega}-cm) and improved optical quality green LED active region emitting at {lambda} {approx}540nm by electroluminescence. The active region of the green LEDs was found to be much more sensitive to the thermal annealing effect during the p-type layer growth than that of the blue LEDs. We have designed grown, fabricated green LED structures for both 520 nm and 540 nm for the evaluation of second year green LED development.

  7. Influence of light waves on the thermoelectric power under large magnetic field in III-V, ternary and quaternary materials

    Energy Technology Data Exchange (ETDEWEB)

    Ghatak, K.P. [Department of Electronic Science, The University of Calcutta, 92, Acharya Prafulla Chandra Road, Kolkata 700 009 (India); Bhattacharya, S. [Post Graduate Department of Computer Science, St. Xavier' s College, 30 Park Street, Kolkata 700 016 (India); Pahari, S. [Department of Administration, Jadavpur University, Kolkata 700 032 (India); De, D. [Department of Computer Science and Engineering, West Bengal University of Technology, B. F. 142, Sector I, Salt Lake, Kolkata 700 064 (India); Ghosh, S.; Mitra, M. [Department of Electronics and Telecommunication Engineering, Bengal Engineering and Science University, Howrah 711 103 (India)

    2008-04-15

    We study theoretically the influence of light waves on the thermoelectric power under large magnetic field (TPM) for III-V, ternary and quaternary materials, whose unperturbed energy-band structures, are defined by the three-band model of Kane. The solution of the Boltzmann transport equation on the basis of this newly formulated electron dispersion law will introduce new physical ideas and experimental findings in the presence of external photoexcitation. It has been found by taking n-InAs, n-InSb, n-Hg{sub 1-x}Cd{sub x}Te and n-In{sub 1-x}Ga{sub x}As{sub y}P{sub 1-y} lattice matched to InP as examples that the TPM decreases with increase in electron concentration, and increases with increase in intensity and wavelength, respectively in various manners. The strong dependence of the TPM on both light intensity and wavelength reflects the direct signature of light waves that is in direct contrast as compared with the corresponding bulk specimens of the said materials in the absence of external photoexcitation. The rate of change is totally band-structure dependent and is significantly influenced by the presence of the different energy-band constants. The well-known result for the TPM for nondegenerate wide-gap materials in the absence of light waves has been obtained as a special case of the present analysis under certain limiting conditions and this compatibility is the indirect test of our generalized formalism. Besides, we have also suggested the experimental methods of determining the Einstein relation for the diffusivity:mobility ratio, the Debye screening length and the electronic contribution to the elastic constants for materials having arbitrary dispersion laws. (Abstract Copyright [2008], Wiley Periodicals, Inc.)

  8. Oxide semiconductors

    CERN Document Server

    Svensson, Bengt G; Jagadish, Chennupati

    2013-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scient

  9. Semiconductor electrochemistry

    CERN Document Server

    Memming, Rüdiger

    2015-01-01

    Providing both an introduction and an up-to-date survey of the entire field, this text captivates the reader with its clear style and inspiring, yet solid presentation. The significantly expanded second edition of this milestone work is supplemented by a completely new chapter on the hot topic of nanoparticles and includes the latest insights into the deposition of dye layers on semiconductor electrodes. In his monograph, the acknowledged expert Professor Memming primarily addresses physical and electrochemists, but materials scientists, physicists, and engineers dealing with semiconductor technology and its applications will also benefit greatly from the contents.

  10. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1962-01-01

    Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a """"quasi-equilibrium"""" co

  11. Analytic Franz-Keldysh effect in one-dimensional polar semiconductors

    CERN Document Server

    Pedersen, T G

    2003-01-01

    The optical properties of a one-dimensional polar semiconductor in a strong electric field are considered. This class of materials includes non-centrosymmetric III-V inorganic quantum wires but also polar conjugated polymers such as polymethineimine. The polar Franz-Keldysh effect is derived via an analytic expression for the complex dielectric constant including line broadening and linear field terms. Results for the high-field non-perturbative regime as well as the low-field expansion are presented.

  12. Properties of the State of the Art of Bulk III-V Nitride Substrates and Homoepitaxial Layers

    Science.gov (United States)

    2010-01-01

    Czochralski or Bridgman because of the extremely high melting temperatures and very high nitrogen decomposition pressures [15–17]. Therefore, crystal...growers across the world have modified or adapted different methods requiring lower temperatures and pressures to grow bulk AlN and GaN semiconductors...high temperature (high nitrogenpressure solution technique— HPS) and HVPE (a quasi-bulk growth process) methods have produced relatively large area

  13. Plasma, magnetic, and electromagnetic measurements at nonmagnetic bodies

    Science.gov (United States)

    Russell, C. T.; Luhmann, J. G.

    The need to explore the magnetospheres of the Earth and the giant planets is widely recognized and is an integral part of our planetary exploration program. The equal need to explore the plasma, magnetic, and electromagnetic environments of the nonmagnetic bodies is not so widely appreciated. The previous, albeit incomplete, magnetic and electric field measurements at Venus, Mars, and comets have proven critical to our understanding of their atmospheres and ionospheres in areas ranging from planetary lightning to solar wind scavenging and accretion. In the cases of Venus and Mars, the ionospheres can provide communication paths over the horizon for low-altitude probes and landers, but we know little about their lower boundaries. The expected varying magnetic fields below these planetary ionospheres penetrates the planetary crusts and can be used to sound the electrical conductivity and the thermal profiles of the interiors. However, we have no knowledge of the levels of such fields, let alone their morphology. Finally, we note that the absence of an atmosphere and an ionosphere does not make an object any less interesting for the purposes of electromagnetic exploration. Even weak remanent magnetism such as that found on the Moon during the Apollo program provides insight into the present and past states of planetary interiors. We have very intriguing data from our space probes during times of both close and distant passages of asteroids that suggest they may have coherent magnetization. If true, this observation will put important constraints on how the asteroids formed and have evolved. Our planetary exploration program must exploit its full range of exploration tools if it is to characterize the bodies of the solar system thoroughly. We should especially take advantage of those techniques that are proven and require low mass, low power, and low telemetry rates to undertake.

  14. New insights into the use of magnetic force microscopy to discriminate between magnetic and nonmagnetic nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Neves, Cristina S; Quaresma, Pedro; Pereira, Eulalia; Eaton, Peter [Requimte/Faculdade de Ciencias, Universidade do Porto, Rua do Campo Alegre, 4169-007 Porto (Portugal); Baptista, Pedro V [CIGMH/Departamento de Ciencias da Vida, FCT-UNL, 2829-516 Caparica (Portugal); Carvalho, PatrIcia A [Departamento de Engenharia de Materiais, IST, Avenida Rovisco Pais 1049-100 Lisboa (Portugal); Araujo, Joao Pedro, E-mail: peter.eaton@fc.up.pt [IFIMUP, Rua do Campo Alegre, 678, 4169-007 Porto (Portugal)

    2010-07-30

    Magnetic force microscopy (MFM) is a very powerful technique, which can potentially be used to detect and localize the magnetic fields arising from nanoscopic magnetic domains, such as magnetic nanoparticles. However, in order to achieve this, we must be able to use MFM to discriminate between magnetic forces arising from the magnetic nanoparticles and nonmagnetic forces from other particles and sample features. Unfortunately, MFM can show a significant response even for nonmagnetic nanoparticles, giving rise to potentially misleading results. The literature to date lacks evidence for MFM detection of magnetic nanoparticles with nonmagnetic nanoparticles as a control. In this work, we studied magnetite particles of two sizes and with a silica shell, and compared them to nonmagnetic metallic and silica nanoparticles. We found that even on conducting, grounded substrates, significant electrostatic interaction between atomic force microscopy probes and nanoparticles can be detected, causing nonmagnetic signals that might be mistaken for a true MFM response. Nevertheless, we show that MFM can be used to discriminate between magnetic and nonmagnetic nanoparticles by using an electromagnetic shielding technique or by analysis of the phase shift data. On the basis of our experimental evidence we propose a methodology that enables MFM to be reliably used to study unknown samples containing magnetic nanoparticles, and correctly interpret the data obtained.

  15. Tailoring spin-orbit torque in diluted magnetic semiconductors

    KAUST Repository

    Li, Hang

    2013-05-16

    We study the spin orbit torque arising from an intrinsic linear Dresselhaus spin-orbit coupling in a single layer III-V diluted magnetic semiconductor. We investigate the transport properties and spin torque using the linear response theory, and we report here: (1) a strong correlation exists between the angular dependence of the torque and the anisotropy of the Fermi surface; (2) the spin orbit torque depends nonlinearly on the exchange coupling. Our findings suggest the possibility to tailor the spin orbit torque magnitude and angular dependence by structural design.

  16. A Semiconductor Under Insulator Technology in Indium Phosphide

    CERN Document Server

    Mnaymneh, Khaled; Frédérick, Simon; Lapointe, Jean; Poole, Philip J; Williams, Robin L

    2012-01-01

    This Letter introduces a Semiconductor-Under-Insulator (SUI) technology in InP for designing strip waveguides that interface InP photonic crystal membrane structures. Strip waveguides in InP-SUI are supported under an atomic layer deposited insulator layer in contrast to strip waveguides in silicon supported on insulator. We show a substantial improvement in optical transmission when using InP-SUI strip waveguides interfaced with localized photonic crystal membrane structures when compared with extended photonic crystal waveguide membranes. Furthermore, SUI makes available various fiber-coupling techniques used in SOI, such as sub-micron coupling, for planar membrane III-V systems.

  17. Electron states in semiconductor quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Dhayal, Suman S., E-mail: ssdhayal@gmail.com [Department of Physics, University of North Texas, P.O. Box 311427, Denton, Texas 76203 (United States); Ramaniah, Lavanya M., E-mail: lavanya@barc.gov.in [High Pressure and Synchrotron Radiation Physics Division, Physics Group, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India); Ruda, Harry E.; Nair, Selvakumar V., E-mail: selva.nair@utoronto.ca [Centre for Nanotechnology, University of Toronto, 170 College Street, Toronto, Ontario M5S 3E3 (Canada)

    2014-11-28

    In this work, the electronic structures of quantum dots (QDs) of nine direct band gap semiconductor materials belonging to the group II-VI and III-V families are investigated, within the empirical tight-binding framework, in the effective bond orbital model. This methodology is shown to accurately describe these systems, yielding, at the same time, qualitative insights into their electronic properties. Various features of the bulk band structure such as band-gaps, band curvature, and band widths around symmetry points affect the quantum confinement of electrons and holes. These effects are identified and quantified. A comparison with experimental data yields good agreement with the calculations. These theoretical results would help quantify the optical response of QDs of these materials and provide useful input for applications.

  18. Electron beam pumped III-V nitride vertical cavity surface emitting lasers grown by molecular beam epitaxy

    Science.gov (United States)

    Ng, Hock Min

    The design and fabrication by molecular beam epitaxy of a prototype vertical cavity laser based on the III-V nitrides were investigated in this work. The bottom mirror of the laser consists of distributed Bragg reflectors (DBRs) based on quarterwave AlN (or AlxGa1-xN) and GaN layers. Such DBRs were designed for maximum reflectivity in the spectral region from 390--600 nm. The epitaxial growth of these two binaries on each other revealed that while AlN grows on GaN in a two-dimensional mode (Frank-van der Merwe mode), GaN grows on AlN in a three-dimensional mode (Stranski-Krastanov mode). In spite of that, DBRs with peak reflectance up to 99% and bandwidths of 45nm were fabricated. The measured reflectance spectra were compared with simulations using the transmission matrix method. The mechanical stability of these DBR structures due to non-uniform distribution of strain arising from lattice or thermal mismatch of the various components were also addressed. The active region of the laser consists of InGaN/GaN multiple quantum wells (MQWs). The existence of up to the third order diffraction peaks in the x-ray diffraction spectra suggests that the interfaces between InGaN and GaN are sharp with little interdiffusion at the growth temperature. The photoluminescence and cathodoluminescence spectra were analyzed to determine the optical quality of the MQWs. The best MQWs were shown to have a single emission peak at 397nm with full width half maximum (FWHM) of 11nm. Cathodoluminescence studies showed that there are spatially localized areas of intense light emission. The complete device was formed on (0001) sapphire substrates using the previously described DBRs as bottom mirrors and the MQWs as the active region. The top mirror of the device consists of metallic silver. The device was pumped by an electron beam from the top mirror side and the light output was collected from the sapphire side. Measurements at 100K showed narrowing of the linewidth with increasing pump

  19. Semiconductor Detectors; Detectores de Semiconductores

    Energy Technology Data Exchange (ETDEWEB)

    Cortina, E.

    2007-07-01

    Particle detectors based on semiconductor materials are among the few devices used for particle detection that are available to the public at large. In fact we are surrounded by them in our daily lives: they are used in photoelectric cells for opening doors, in digital photographic and video camera, and in bar code readers at supermarket cash registers. (Author)

  20. [Double Endobutto reconstituting coracoclavicular ligament combined with repairing acromioclavicular ligament at stage I for the treatment of acromioclavicular dislocation with Rockwood type III - V].

    Science.gov (United States)

    Hu, Wen-yue; Yu, Chong; Huang, Zhong-ming; Han, Lei

    2015-06-01

    To explore clinical efficacy of double Endobutto reconstituting coracoclavicular ligament combined with repairing acromioclavicular ligament in stage I in treating acromioclavicular dislocation with Rockwood type III - V . From January 2010 to September 2013, 56 patients with Rockwood type III - V acromioclavicular dislocation were treated by operation, including 20 males and 36 femlaes, aged from 32 to 52 years old with an average of 38.5 years old. Twenty-five patients were on the left side and 31 cases on the right side. The time from injury to operation was from 3 to 14 days, averaged 7 days. All patients were diagnosed as acromioclavicular dislocation with Rockwood type III - V, and double Endobutto were used to reconstituting coracoclavicular ligament, line metal anchors were applied for repairing acromioclavicular ligament. Postoperative complications were observed, Karlsson and Constant-Murley evaluation standard were used to evaluate clinical effects. All patients were followed up from 8 to 24 months with average of 11 months. According to Karlsson evaluation standard at 6 months after operation,42 cases were grade A, 13 were grade B and 1 was grade C. Constant-Murley score were improved from (42.80±5.43) before operation to (91.75±4.27) at 6 months after operation. All items at 6 months after operation were better than that of preoperative items. Forty-eight patients got excellent results, 7 were moderate and only 1 with bad result. No shoulder joint adhesion, screw loosening or breakage were occurred during following up. Double Endobutto reconstituting coracoclavicular ligament combined with repairing acromioclavicular ligament in stage I for the treatment of acromioclavicular dislocation with Rockwood type III - V could obtain early staisfied clinical effects, and benefit for early recovery of shoulder joint function.

  1. The Mobility Edge in Disordered Ferromagnetic Doped Semiconductors

    Science.gov (United States)

    Nielsen, Erik; Bhatt, R. N.

    2007-03-01

    While the clearest example of ferromagnetism in doped semiconductors is seen in diluted magnetic semiconductors such as Ga1-xMnxAs, under certain conditions, semiconductors doped with non-magnetic impurities may also exhibit ferromagnetic ground states. We present numerical results of the nature of single particle states in such a positionally disordered three-dimensional system with a maximally spin-polarized ground state using a realistic potential for hydrogenic centers. In particular, we identify the mobility edges, which mark the energies at which single particle states become delocalized, and whose location relative to the Fermi energy determine electronic transport in the system. We describe the dependence of the mobility edges on impurity density and potential, and discuss the variation of conductivity with impurity and carrier density. H. Ohno, Science 281, 951 (1998) Erik Nielsen and R. N. Bhatt, APS March Meeting 2006. R. N. Bhatt and T. M. Rice, Physical Review B 23, 1920 (1981).

  2. High-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb

    Energy Technology Data Exchange (ETDEWEB)

    Tu, Nguyen Thanh [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Department of Physics, Ho Chi Minh City University of Pedagogy, 280, An Duong Vuong Street, District 5, Ho Chi Minh City 748242 (Viet Nam); Hai, Pham Nam [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-0033 (Japan); Center for Spintronics Research Network (CSRN), The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Anh, Le Duc [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Tanaka, Masaaki [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Center for Spintronics Research Network (CSRN), The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2016-05-09

    We show high-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga{sub 1−x},Fe{sub x})Sb (x = 23% and 25%) thin films grown by low-temperature molecular beam epitaxy. Magnetic circular dichroism spectroscopy and anomalous Hall effect measurements indicate intrinsic ferromagnetism of these samples. The Curie temperature reaches 300 K and 340 K for x = 23% and 25%, respectively, which are the highest values reported so far in intrinsic III-V ferromagnetic semiconductors.

  3. Increased bismuth concentration in MBE GaAs{sub 1−x}Bi{sub x} films by oscillating III/V flux ratio during growth

    Energy Technology Data Exchange (ETDEWEB)

    Wood, Adam W., E-mail: awood4@wisc.edu; Babcock, Susan E. [Materials Science and Engineering, University of Wisconsin, Madison, Wisconsin 53706 (United States); Li, Jincheng; Brown, April S. [Electrical and Computer Engineering, Duke University, Durham, North Carolina 27707 (United States)

    2015-05-15

    The authors have examined bismuth concentration profiles in GaAs{sub 1−x}Bi{sub x} films grown by molecular beam epitaxy using high angle annular dark field imaging (Z-contrast imaging) in an aberration-corrected scanning transmission electron microscope in conjunction with x-ray diffraction. Samples were grown with a gradient in each of the component fluxes, and therefore, the III/V ratio across the substrate. Rotating the sample during growth exposed the growth surface to an oscillating III/V flux ratio. Sinusoidal [Bi] profiles resulted in the growth direction, the wavelength and number of which were consistent with the growth rate and the rate of substrate rotation. However, the magnitude of [Bi] in the observed fluctuations was greater than the maximum [Bi] achieved using the same Bi flux and Ga/As flux ratios in steady-state conditions on a stationary substrate, suggesting that varying the III/V flux ratio during growth promotes the incorporation of Bi in GaAs{sub 1−x}Bi{sub x} films. A proposed qualitative model for how this enhancement might occur hypothesizes a critical role for alternating growth and shrinkage of Ga-Bi predroplet clusters on the surface as the growing material is rotated through Ga-rich and As-rich flux compositions.

  4. Magnetism without magnetic ions in non-magnetic perovskites SrTiO 3, SrZrO 3 and SrSnO 3

    Science.gov (United States)

    Bannikov, V. V.; Shein, I. R.; Kozhevnikov, V. L.; Ivanovskii, A. L.

    Using the full-potential linearized augmented plane-wave (FP-LAPW) method with the generalized gradient approximation (GGA) for the exchange-correlation potential, we studied spin polarization induced by replacement of oxygen atoms by non-magnetic 2p impurities (B, C and N) in non-magnetic cubic SrMO 3 perovskites, where M=Ti, Zr and Sn. The results show that the magnetization may appear because of the spin-split impurity bands inside the energy gap of the insulating SrMO 3 matrix. Large magnetic moments are found for the impurity centers. Smaller magnetic moments are induced on the oxygen atoms around impurities. It is shown that SrTiO 3:C and SrSnO 3:C should be magnetic semiconductors while other compounds in this series (SrTiO 3:B, SrTiO 3:N and SrZrO 3:C) are expected to exhibit magnetic half-metallic or pseudo-half-metallic properties.

  5. Magnetism without magnetic ions in non-magnetic perovskites SrTiO{sub 3}, SrZrO{sub 3} and SrSnO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Bannikov, V.V.; Shein, I.R.; Kozhevnikov, V.L. [Institute of Solid State Chemistry, Ural Branch of the Russian Academy of Sciences, 620041 Ekaterinburg (Russian Federation); Ivanovskii, A.L. [Institute of Solid State Chemistry, Ural Branch of the Russian Academy of Sciences, 620041 Ekaterinburg (Russian Federation)], E-mail: ivanovskii@ihim.uran.ru

    2008-03-15

    Using the full-potential linearized augmented plane-wave (FP-LAPW) method with the generalized gradient approximation (GGA) for the exchange-correlation potential, we studied spin polarization induced by replacement of oxygen atoms by non-magnetic 2p impurities (B, C and N) in non-magnetic cubic SrMO{sub 3} perovskites, where M=Ti, Zr and Sn. The results show that the magnetization may appear because of the spin-split impurity bands inside the energy gap of the insulating SrMO{sub 3} matrix. Large magnetic moments are found for the impurity centers. Smaller magnetic moments are induced on the oxygen atoms around impurities. It is shown that SrTiO{sub 3}:C and SrSnO{sub 3}:C should be magnetic semiconductors while other compounds in this series (SrTiO{sub 3}:B, SrTiO{sub 3}:N and SrZrO{sub 3}:C) are expected to exhibit magnetic half-metallic or pseudo-half-metallic properties.

  6. Semiconductor Optics

    CERN Document Server

    Klingshirn, Claus F

    2012-01-01

    This updated and enlarged new edition of Semiconductor Optics provides an introduction to and an overview of semiconductor optics from the IR through the visible to the UV, including linear and nonlinear optical properties, dynamics, magneto and electrooptics, high-excitation effects and laser processes, some applications, experimental techniques and group theory. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered extend from physics to materials science and optoelectronics. Significantly updated chapters add coverage of current topics such as electron hole plasma, Bose condensation of excitons and meta materials. Over 120 problems, chapter introductions and a detailed index make it the key textbook for graduate students in physics. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered ...

  7. Semiconductor sensors

    Energy Technology Data Exchange (ETDEWEB)

    Hartmann, Frank, E-mail: frank.hartmann@cern.c [Institut fuer Experimentelle Kernphysik, KIT, Wolfgang-Gaede-Str. 1, Karlsruhe 76131 (Germany)

    2011-02-01

    Semiconductor sensors have been around since the 1950s and today, every high energy physics experiment has one in its repertoire. In Lepton as well as Hadron colliders, silicon vertex and tracking detectors led to the most amazing physics and will continue doing so in the future. This contribution tries to depict the history of these devices exemplarily without being able to honor all important developments and installations. The current understanding of radiation damage mechanisms and recent R and D topics demonstrating the future challenges and possible technical solutions for the SLHC detectors are presented. Consequently semiconductor sensor candidates for an LHC upgrade and a future linear collider are also briefly introduced. The work presented here is a collage of the work of many individual silicon experts spread over several collaborations across the world.

  8. Local destruction of superconductivity by non-magnetic impurities in mesoscopic iron-based superconductors.

    Science.gov (United States)

    Li, Jun; Ji, Min; Schwarz, Tobias; Ke, Xiaoxing; Van Tendeloo, Gustaaf; Yuan, Jie; Pereira, Paulo J; Huang, Ya; Zhang, Gufei; Feng, Hai-Luke; Yuan, Ya-Hua; Hatano, Takeshi; Kleiner, Reinhold; Koelle, Dieter; Chibotaru, Liviu F; Yamaura, Kazunari; Wang, Hua-Bing; Wu, Pei-Heng; Takayama-Muromachi, Eiji; Vanacken, Johan; Moshchalkov, Victor V

    2015-07-03

    The determination of the pairing symmetry is one of the most crucial issues for the iron-based superconductors, for which various scenarios are discussed controversially. Non-magnetic impurity substitution is one of the most promising approaches to address the issue, because the pair-breaking mechanism from the non-magnetic impurities should be different for various models. Previous substitution experiments demonstrated that the non-magnetic zinc can suppress the superconductivity of various iron-based superconductors. Here we demonstrate the local destruction of superconductivity by non-magnetic zinc impurities in Ba0.5K0.5Fe2As2 by exploring phase-slip phenomena in a mesoscopic structure with 119 × 102 nm(2) cross-section. The impurities suppress superconductivity in a three-dimensional 'Swiss cheese'-like pattern with in-plane and out-of-plane characteristic lengths slightly below ∼1.34 nm. This causes the superconducting order parameter to vary along abundant narrow channels with effective cross-section of a few square nanometres. The local destruction of superconductivity can be related to Cooper pair breaking by non-magnetic impurities.

  9. A Model of Numerical Calculation of Conductivity for III-V MBE Epilayers Using a Hall Device

    Directory of Open Access Journals (Sweden)

    Andrzej Wolkenberg

    2013-01-01

    Full Text Available An electrical conduction versus temperature model using a Hall device was developed. In the case of InAs, InGaAs, and GaAs MBE epilayers, the prediction agrees well with the experimental results. Herein, we explain here how these calculated fractions of total conductivity describe the measured values. The method allows for the calculation of the carrier concentration and mobility of each component of a multicarrier system. The extracted concentrations are used to characterise the different components of charge transport in the active layer. The conductance values G [S] of these components of charge transport were obtained. Also the scattering events for the investigated samples are presented. The analysis of the experimental results for three semiconductor compositions and different concentrations demonstrates the utility of our method in comparing the conductance of each component of the multilayered system as a function of temperature.

  10. Shadow mask assisted heteroepitaxy of compound semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Schallenberg, T.

    2004-07-01

    Shadow Mask assisted Molecular Beam Epitaxy (SMMBE) is a technique enabling selected area epitaxy of semiconductor heterostructures through shadow masks. The objective of this work was the development of the SMMBE technique for the reliable fabrication of compound semiconductor nanostructures of high structural and optical quality. In order to accomplish this, technological processes have been developed and optimized. One of the technological developments to this effect, which has substantially enhanced the versatility of SMMBE, is the introduction of a new type of freestanding shadow masks. A consistent model has been developed, which successfully explains the growth dynamics of molecular beam epitaxy through shadow masks. The predictions of the model regarding the growth of II-VI and III-V compounds have been tested experimentally and the dependence of the growth rates on the growth parameters has been verified. Moreover, it has been shown, that selected area epitaxy of II-VI and III-V compounds are governed by different surface kinetics. In addition to the basic surface kinetic processes described by the model, the roles of orientation and strain-dependent growth dynamics, partial shadow, and material deposition on the mask (closure of apertures) have been discussed. The resulting advanced understanding of the growth dynamics (model and basic experiments) in combination with the implementation of technical improvements has enabled the development and application of a number of different processes for the fabrication of both II-VI and III-V nanostructures. In addition to specific material properties, various other phenomena have been exploited, e.g., self-organization. Bright cathodoluminescence demonstrates that the resulting quantum structures are of high structural and optical quality. In addition to these results the limitations of the method have also been discussed, and various approaches to overcome them have been suggested. Moreover, propositions for the

  11. Building a spin quantum bit register using semiconductor nanowires.

    Science.gov (United States)

    Baugh, J; Fung, J S; Mracek, J; LaPierre, R R

    2010-04-02

    This paper reviews recent advances in engineering spin quantum bits (qubits) in semiconductor quantum dots and describes an approach based on top-gated semiconductor nanowire devices. Fast electrical single-spin manipulation is achievable, in principle, using the spin-orbit interaction intrinsic to III-V materials, such as InAs, in concert with AC electric fields. Combined with sub-nanosecond gate control of the nearest-neighbor exchange interaction and spin readout by spin-to-charge conversion, a fully electrical solid-state quantum processor is within reach. We outline strategies for spin manipulation, robust readout and mitigation of decoherence due to nuclear fields that, when combined in a single device, should give a viable multi-qubit testbed and a building block for larger scale quantum devices.

  12. Quantum materials. Lateral semiconductor nanostructures, hybrid systems and nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Heitmann, Detlef (ed.) [Hamburg Univ. (Germany). Inst. fuer Angewandte Physik

    2010-07-01

    Semiconductor nanostructures are ideal systems to tailor the physical properties via quantum effects, utilizing special growth techniques, self-assembling, wet chemical processes or lithographic tools in combination with tuneable external electric and magnetic fields. Such systems are called ''Quantum Materials''.The electronic, photonic, and phononic properties of these systems are governed by size quantization and discrete energy levels. The charging is controlled by the Coulomb blockade. The spin can be manipulated by the geometrical structure, external gates and by integrating hybrid ferromagnetic emitters.This book reviews sophisticated preparation methods for quantum materials based on III-V and II-VI semiconductors and a wide variety of experimental techniques for the investigation of these interesting systems. It highlights selected experiments and theoretical concepts and gives such a state-of-the-art overview about the wide field of physics and chemistry that can be studied in these systems. (orig.)

  13. Materials and Reliability Handbook for Semiconductor Optical and Electron Devices

    CERN Document Server

    Pearton, Stephen

    2013-01-01

    Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature. The Handbook addresses reliability engineering for III-V devices, including materials and electrical characterization, reliability testing, and electronic characterization. These are used to develop new simulation technologies for device operation and ...

  14. Microscopical Studies of Structural and Electronic Properties of Semiconductors

    CERN Multimedia

    2002-01-01

    The electronic and structural properties of point defects in semiconductors, e.g. radiation defects, impurities or passivating defects can excellently be studied by the hyperfine technique of Perturbed Angular Correlation (PAC). The serious limitation of this method, the small number of chemically different radioactive PAC probe atoms can be widely overcome by means of ISOLDE. Providing shortliving isotopes, which represent common dopants as well as suitable PAC probe atoms, the ISOLDE facility enables a much broader application of PAC to problems in semiconductor physics.\\\\ Using the probe atom $^{111m}$ Cd , the whole class of III-V compounds becomes accessible for PAC investigations. First successful experiments in GaAs, InP and GaP have been performed, concerning impurity complex formation and plasma induced defects. In Si and Ge, the electronic properties~-~especially their influence on acceptor-donor interaction~-~could be exemplarily st...

  15. High-performance GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics

    Science.gov (United States)

    Lin, H. C.; Ye, P. D.; Xuan, Y.; Lu, G.; Facchetti, A.; Marks, T. J.

    2006-10-01

    High-performance GaAs metal-insulator-semiconductor field-effect-transistors (MISFETs) fabricated with very thin self-assembled organic nanodielectrics (SANDs), deposited from solution at room temperature, are demonstrated. A submicron gate-length depletion-mode n-channel GaAs MISFET with SAND thicknesses ranging from 5.5to16.5nm exhibit a gate leakage current density <10-5A/cm2 at a gate bias smaller than 3V, a maximum drain current of 370mA/mm at a forward gate bias of 2V, and a maximum intrinsic transconductance of 170mS/mm. The importance of appropriate GaAs surface chemistry treatments on SAND/GaAs interface properties is also presented. Application of SANDs to III-V compound semiconductors affords more opportunities to manipulate the complex III-V surface chemistry with broad materials options.

  16. Semiconductor laser

    Energy Technology Data Exchange (ETDEWEB)

    Ito, K.; Shyuue, M.

    1982-09-25

    A distributed feedback semiconductor laser is proposed which generates several beams with equal wavelengths in different directions. For this purpose, 1 millimeter grooves are cut into the surface of an n-type conductance GaAs plate in three different directions; these grooves form a diffraction grating. The center of this plate has no grooves and is bombarded by an He/Ne laser beam. The diffraction gratings provide resonance properties and generate laser beams with wavelengths of 8850, 9000 and 9200 angstroms.

  17. Improvement of microwave magnetic properties by inserting nonmagnetic layer

    Science.gov (United States)

    Li, Xiaoting; An, Chao; Wang, Zhen; Xu, Chunlong; Shi, Gang; Wang, Jinguo; Hou, Zhaoyang; Xi, Li

    2017-01-01

    Co/NM (nonmagnetic Ag and SiO2)/Co sandwich structure films with different thicknesses of NM were fabricated on Si(111) substrate via oblique radio frequency sputtering. With increasing thickness of nonmagnetic Ag (tAg), in-plane magnetic anisotropy field Hk initially increased from 100 Oe of tAg = 0 nm to 220 Oe of tAg = 1.5 nm, and then decreased when tAg > 1.5 nm. Resonance frequency showed the same tendency with maximum 5.2 GHz when tAg = 1.5 nm. Damp factor increased from 0.02 for tAg = 0-0.08 for tAg = 2.0 nm. The same result was observed in inserting oxide nonmagnetic SiO2 layer. This can be attributed to the competition between interface energy and exchange coupling energy.

  18. Magnetofluidic concentration and separation of non-magnetic particles using two magnet arrays.

    Science.gov (United States)

    Hejazian, Majid; Nguyen, Nam-Trung

    2016-07-01

    The present paper reports the use of diluted ferrofluid and two arrays of permanent magnets for the size-selective concentration of non-magnetic particles. The micro magnetofluidic device consists of a straight channels sandwiched between two arrays of permanent magnets. The permanent magnets create multiple capture zones with minimum magnetic field strength along the channel. The complex interaction between magnetic forces and hydrodynamic force allows the device to operate in different regimes suitable for concentration of non-magnetic particles with small difference in size. Our experimental results show that non-magnetic particles with diameters of 3.1 μm and 4.8 μm can be discriminated and separated with this method. The results from this study could be used as a guide for the design of size-sensitive separation devices for particle and cell based on negative magnetophoresis.

  19. Simulation of magnetic hysteresis loops and magnetic Barkhausen noise of α-iron containing nonmagnetic particles

    Directory of Open Access Journals (Sweden)

    Yi Li

    2015-07-01

    Full Text Available The magnetic hysteresis loops and Barkhausen noise of a single α-iron with nonmagnetic particles are simulated to investigate into the magnetic hardening due to Cu-rich precipitates in irradiated reactor pressure vessel (RPV steels. Phase field method basing Landau-Lifshitz-Gilbert (LLG equation is used for this simulation. The results show that the presence of the nonmagnetic particle could result in magnetic hardening by making the nucleation of reversed domains difficult. The coercive field is found to increase, while the intensity of Barkhausen noise voltage is decreased when the nonmagnetic particle is introduced. Simulations demonstrate the impact of nucleation field of reversed domains on the magnetization reversal behavior and the magnetic properties.

  20. Simulation of magnetic hysteresis loops and magnetic Barkhausen noise of α-iron containing nonmagnetic particles

    Energy Technology Data Exchange (ETDEWEB)

    Li, Yi; Li, Qiulin; Liu, Wei, E-mail: liuw@mail.tsinghua.edu.cn [School of Material Science and Engineering, Tsinghua University, Beijing, 100084 (China); Graduate School at Shenzhen, Tsinghua University, Shenzhen, 518055 (China); Xu, Ben [School of Material Science and Engineering, Tsinghua University, Beijing, 100084 (China); Hu, Shenyang; Li, Yulan [Energy Materials Division, Pacific Northwest National Laboratory, Richland, WA, 99352 (United States)

    2015-07-15

    The magnetic hysteresis loops and Barkhausen noise of a single α-iron with nonmagnetic particles are simulated to investigate into the magnetic hardening due to Cu-rich precipitates in irradiated reactor pressure vessel (RPV) steels. Phase field method basing Landau-Lifshitz-Gilbert (LLG) equation is used for this simulation. The results show that the presence of the nonmagnetic particle could result in magnetic hardening by making the nucleation of reversed domains difficult. The coercive field is found to increase, while the intensity of Barkhausen noise voltage is decreased when the nonmagnetic particle is introduced. Simulations demonstrate the impact of nucleation field of reversed domains on the magnetization reversal behavior and the magnetic properties.

  1. Removal of a giant nonmagnetic intraocular foreign body using micro alligator forceps.

    Science.gov (United States)

    Liang, Shenzhi; Wan, Guangming; Li, Xiujuan; Liu, Xiaoqiang; Zhu, Yu

    2014-01-01

    To introduce a new method for removal of a giant nonmagnetic intraocular foreign body using micro alligator forceps. Eleven patients underwent pars plana vitrectomy and lensectomy. The micro alligator forceps were used to grasp and extract the giant nonmagnetic intraocular foreign body through a sclerocorneal tunnel. All patients underwent surgical removal of the intraocular foreign body successfully without any intraoperative complications. The alligator forceps were operational in the intraocular environment and effective in surgical maneuvers. There was no accidental slippage during the procedures. Micro alligator forceps are a feasible option for removal of giant nonmagnetic intraocular foreign body during vitreoretinal surgery and offer advances in terms of operating stability and surgical safety. Copyright 2014, SLACK Incorporated.

  2. Nuclear Electrical and Optical Studies of Hydrogen in Semiconductors.

    CERN Multimedia

    Dietrich, M; Toulemonde, M

    2002-01-01

    During the last years, the understanding of H and its interaction with dopant atoms in Si, Ge and III-V semiconductors has improved considerably concerning the stability of the formed complexes their structural arrangements, and the implications of this interaction on the electrical properties of the semiconductors " passivation " The perturbed angular correlation technique (PAC) has contributed to the understanding of this phenomena on an atomistic scale using radioactive isotopes provided by ISOLDE. \\\\ \\\\The aim of the proposed experiments is twofold: \\\\ \\\\\\begin{enumerate} \\item The H passivation mechanism of acceptors in GaN and ternary III-V compounds (AlGaAs, GaInP, AlGaN) shall be investigated, using the PAC probe atom $^{111m}$Cd as a 'representative' of group II-B metal acceptors. The problems addressed in these technological important systems are microscopic structure, formation and stability of the hydrogen correlated complexes as function of doping and stoichiometry (i.e. the size of the band gap)...

  3. Device Concepts Based on Spin-dependent Transmission in Semiconductor Heterostructures

    Science.gov (United States)

    Ting, David Z. - Y.; Cartoixa, X.

    2004-01-01

    We examine zero-magnetic-field spin-dependent transmission in nonmagnetic semiconductor heterostructures with structural inversion asymmetry (SIA) and bulk inversion asymmetry (BIA), and report spin devices concepts that exploit their properties. Our modeling results show that several design strategies could be used to achieve high spin filtering efficiencies. The current spin polarization of these devices is electrically controllable, and potentially amenable to highspeed spin modulation, and could be integrated in optoelectronic devices for added functionality.

  4. Development of a Non-Magnetic Inertial Sensor for Vibration Stabilization in a Linear Collider

    Energy Technology Data Exchange (ETDEWEB)

    Frisch, Josef; Decker, Valentin; Doyle, Eric; Hendrickson, Linda; Himel, Thomas; Markiewicz, Thomas; Seryi, Andrei; /SLAC; Chang, Allison; Partridge, Richard; /Brown U.

    2006-09-01

    One of the options for controlling vibration of the final focus magnets in a linear collider is to use active feedback based on accelerometers. While commercial geophysics sensors have noise performance that substantially exceeds the requirements for a linear collider, they are physically large, and cannot operate in the strong magnetic field of the detector. Conventional nonmagnetic sensors have excessive noise for this application. We report on the development of a non-magnetic inertial sensor, and on a novel commercial sensor both of which have demonstrated the required noise levels for this application.

  5. Optimized cylindrical invisibility cloak with minimum layers of non-magnetic isotropic materials

    Energy Technology Data Exchange (ETDEWEB)

    Yu Zhenzhong; Feng Yijun; Xu Xiaofei; Zhao Junming; Jiang Tian, E-mail: yjfeng@nju.edu.cn [Department of Electronic Engineering, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093 (China)

    2011-05-11

    We present optimized design of cylindrical invisibility cloak with minimum layers of non-magnetic isotropic materials. Through an optimization procedure based on genetic algorithm, simpler cloak structure and more realizable material parameters can be achieved with better cloak performance than that of an ideal non-magnetic cloak with a reduced set of parameters. We demonstrate that a cloak shell with only five layers of two normal materials can result in an average 20 dB reduction in the scattering width for all directions when covering the inner conducting cylinder with the cloak. The optimized design can substantially simplify the realization of the invisibility cloak, especially in the optical range.

  6. Magnetization Reversal Process of Single Crystal α-Fe Containing a Nonmagnetic Particle

    Energy Technology Data Exchange (ETDEWEB)

    Li, Yi [Tsinghua Univ., Beijing (China); Tsinghua Univ., Shenzhen (China); Xu, Ben [Tsinghua Univ., Beijing (China); Hu, Shenyang Y. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Li, Yulan [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Li, Qiu-Lin [Tsinghua Univ., Beijing (China); Tsinghua Univ., Shenzhen (China); Liu, Wei [Tsinghua Univ., Beijing (China); Tsinghua Univ., Shenzhen (China)

    2015-09-25

    The magnetization reversal process and hysteresis loops in a single crystal α-iron with nonmagnetic particles are simulated in this work based on the Landau-Lifshitz–Gilbert equation. The evolutions of the magnetic domain morphology are studied, and our analyses show that the magnetization reversal process is affected by the interaction between the moving domain wall and the existing nonmagnetic particles. This interaction strongly depends on the size of the particles, and it is found that particles with a particular size contribute the most to magnetic hardening.

  7. Power semiconductors

    CERN Document Server

    Kubát, M

    1984-01-01

    The book contains a summary of our knowledge of power semiconductor structures. It presents first a short historic introduction (Chap. I) as well as a brief selection of facts from solid state physics, in particular those related to power semiconductors (Chap. 2). The book deals with diode structures in Chap. 3. In addition to fundamental facts in pn-junction theory, the book covers mainly the important processes of power structures. It describes the emitter efficiency and function of microleaks (shunts). the p +p and n + n junctions, and in particular the recent theory of the pin, pvn and p1tn junctions, whose role appears to be decisive for the forward mode not only of diode structures but also of more complex ones. For power diode structures the reverse mode is the decisive factor in pn-junction breakdown theory. The presentation given here uses engineering features (the multiplication factor M and the experimentally detected laws for the volume and surface of crystals), which condenses the presentation an...

  8. Magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bihler, Christoph

    2009-04-15

    In this thesis we investigated in detail the properties of Ga{sub 1-x}Mn{sub x}As, Ga{sub 1-x}Mn{sub x}P, and Ga{sub 1-x}Mn{sub x}N dilute magnetic semiconductor thin films with a focus on the magnetic anisotropy and the changes of their properties upon hydrogenation. We applied two complementary spectroscopic techniques to address the position of H in magnetic semiconductors: (i) Electron paramagnetic resonance, which provides direct information on the symmetry of the crystal field of the Mn{sup 2+} atoms and (ii) x-ray absorption fine structure analysis which allows to probe the local crystallographic neighborhood of the absorbing Mn atom via analysing the fine structure at the Mn K absorption edge. Finally, we discussed the obstacles that have to be overcome to achieve Curie temperatures above the current maximum in Ga{sub 1-x}Mn{sub x}As of 185 K. Here, we outlined in detail the generic problem of the formation of precipitates at the example of Ge:MN. (orig.)

  9. Semiconductor Laser Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

  10. Arsenic (III, V), indium (III), and gallium (III) toxicity to zebrafish embryos using a high-throughput multi-endpoint in vivo developmental and behavioral assay.

    Science.gov (United States)

    Olivares, Christopher I; Field, Jim A; Simonich, Michael; Tanguay, Robert L; Sierra-Alvarez, Reyes

    2016-04-01

    Gallium arsenide (GaAs), indium gallium arsenide (InGaAs) and other III/V materials are finding increasing application in microelectronic components. The rising demand for III/V-based products is leading to increasing generation of effluents containing ionic species of gallium, indium, and arsenic. The ecotoxicological hazard potential of these streams is unknown. While the toxicology of arsenic is comprehensive, much less is known about the effects of In(III) and Ga(III). The embryonic zebrafish was evaluated for mortality, developmental abnormalities, and photomotor response (PMR) behavior changes associated with exposure to As(III), As(V), Ga(III), and In(III). The As(III) lowest observable effect level (LOEL) for mortality was 500 μM at 24 and 120 h post fertilization (hpf). As(V) exposure was associated with significant mortality at 63 μM. The Ga(III)-citrate LOEL was 113 μM at 24 and 120 hpf. There was no association of significant mortality over the tested range of In(III)-citrate (56-900 μM) or sodium citrate (213-3400 μM) exposures. Only As(V) resulted in significant developmental abnormalities with LOEL of 500 μM. Removal of the chorion prior to As(III) and As(V) exposure was associated with increased incidence of mortality and developmental abnormality suggesting that the chorion may normally attenuate mass uptake of these metals by the embryo. Finally, As(III), As(V), and In(III) caused PMR hypoactivity (49-69% of control PMR) at 900-1000 μM. Overall, our results represent the first characterization of multidimensional toxicity effects of III/V ions in zebrafish embryos helping to fill a significant knowledge gap, particularly in Ga(III) and In(III) toxicology.

  11. Oxide-Free Bonding of III-V-Based Material on Silicon and Nano-Structuration of the Hybrid Waveguide for Advanced Optical Functions

    Directory of Open Access Journals (Sweden)

    Konstantinos Pantzas

    2015-10-01

    Full Text Available Oxide-free bonding of III-V-based materials for integrated optics is demonstrated on both planar Silicon (Si surfaces and nanostructured ones, using Silicon on Isolator (SOI or Si substrates. The hybrid interface is characterized electrically and mechanically. A hybrid InP-on-SOI waveguide, including a bi-periodic nano structuration of the silicon guiding layer is demonstrated to provide wavelength selective transmission. Such an oxide-free interface associated with the nanostructured design of the guiding geometry has great potential for both electrical and optical operation of improved hybrid devices.

  12. Croissance hétérogène de semi-conducteurs III-V sur silicium : vers l'optoélectronique sur silicium

    OpenAIRE

    Cornet, Charles; Létoublon, Antoine; Guo, Weiming; Bondi, Alexandre; Richard, Soline; Rohel, Tony; Chevalier, Nicolas; Dehaese, Olivier; Tavernier, Karine; Perrin, Mathieu,; Jancu, Jean-Marc; Durand, Olivier; Bertru, Nicolas; Even, Jacky; Loualiche, Slimane

    2010-01-01

    National audience; L’intérêt d’une croissance hétérogène cohérente et monolithique de semiconducteurs III-V sur substrat de silicium est exposée au regard des composants optoélectroniques visés. Les derniers développements sur la croissance cohérente de GaP sur silicium, et des possibles émetteurs optiques seront présentés.

  13. Microscopic Optical Characterization of Free Standing III-Nitride Substrates, ZnO Bulk Crystals, and III-V Structures for Non-Linear Optics. Part 2

    Science.gov (United States)

    2010-05-18

    Standard Form 298 (Rev. 8/98) Prescribed by ANSI Std. Z39-18 GIR: Materiales semiconductores y nanoestructuras para la optoelectrónica...de la Materia Condensada Edificio de i+d Paseo de Belen 1 47011 Valladolid, Spain GIR: Materiales semiconductores y nanoestructuras para la...380 400 420 440 460 480 500 520 540 560 580 600 620 nm 1 2 3 2 3 1 GIR: Materiales semiconductores y

  14. Non-magnetic negative-refraction systems for terahertz and far-infrared frequencies

    CERN Document Server

    Alekseyev, Leonid V; Narimanov, Evgenii E

    2012-01-01

    We demonstrate that homogeneous naturally-occurring materials can form non-magnetic negative refractive index systems, and present specific realizations of the proposed approach for the THz and far-IR frequencies. The proposed structure operates away from resonance, thereby promising the capacity for low-loss devices.

  15. Nurse Outcomes in Magnet® and Non-Magnet Hospitals

    Science.gov (United States)

    Kelly, Lesly A.; McHugh, Matthew D.; Aiken, Linda H.

    2017-01-01

    The important goals of Magnet® hospitals are to create supportive professional nursing care environments. A recently published paper found little difference in work environments between Magnet and non-Magnet hospitals. The aim of this study was to determine whether work environments, staffing, and nurse outcomes differ between Magnet and non-Magnet hospitals. A secondary analysis of data from a 4-state survey of 26,276 nurses in 567 acute care hospitals to evaluate differences in work environments and nurse outcomes in Magnet and non-Magnet hospitals was conducted. Magnet hospitals had significantly better work environments (t = −5.29, P < .001) and more highly educated nurses (t = −2.27, P < .001). Magnet hospital nurses were 18% less likely to be dissatisfied with their job (P < .05) and 13% less likely to report high burnout (P < .05). Magnet hospitals have significantly better work environments than non-Magnet hospitals. The better work environments of Magnet hospitals are associated with lower levels of nurse job dissatisfaction and burnout. PMID:22976894

  16. Pulsed remote field eddy current technique applied to non-magnetic flat conductive plates

    Science.gov (United States)

    Yang, Binfeng; Zhang, Hui; Zhang, Chao; Zhang, Zhanbin

    2013-12-01

    Non-magnetic metal plates are widely used in aviation and industrial applications. The detection of cracks in thick plate structures, such as multilayered structures of aircraft fuselage, has been challenging in nondestructive evaluation societies. The remote field eddy current (RFEC) technique has shown advantages of deep penetration and high sensitivity to deeply buried anomalies. However, the RFEC technique is mainly used to evaluate ferromagnetic tubes. There are many problems that should be fixed before the expansion and application of this technique for the inspection of non-magnetic conductive plates. In this article, the pulsed remote field eddy current (PRFEC) technique for the detection of defects in non-magnetic conducting plates was investigated. First, the principle of the PRFEC technique was analysed, followed by the analysis of the differences between the detection of defects in ferromagnetic and non-magnetic plain structures. Three different models of the PRFEC probe were simulated using ANSYS. The location of the transition zone, defect detection sensitivity and the ability to detect defects in thick plates using three probes were analysed and compared. The simulation results showed that the probe with a ferrite core had the highest detecting ability. The conclusions derived from the simulation study were also validated by conducting experiments.

  17. Magnetic field aligned assembly of nonmagnetic composite dumbbells in nanoparticle-based aqueous ferrofluid.

    Science.gov (United States)

    Takahashi, Hayato; Nagao, Daisuke; Watanabe, Kanako; Ishii, Haruyuki; Konno, Mikio

    2015-05-26

    Monodisperse, nonmagnetic, asymmetrical composite dumbbells in a suspension of magnetic nanoparticles (ferrofluid) were aligned by application of an external magnetic field to the ferrofluid. The asymmetrical composite dumbbells were prepared by two-step soap-free emulsion polymerization consisting of the first polymerization to coat spherical silica cores with cross-linked poly(methyl methacrylate) (PMMA) shell and the second polymerization to protrude a polystyrene (PSt) lobe from the core-shell particles. A chain structure of nonmagnetic dumbbells oriented to the applied magnetic field was observed at nanoparticle content of 2.0 vol % and field strengths higher than 1.0 mT. A similar chain structure of the dumbbells was observed under application of alternating electric field at strengths higher than 50 V/mm. Parallel and orthogonally combined applications of the electric and magnetic fields were also conducted to examine independence of the electric and magnetic applications as operational factors in the dumbbell assembling. Dumbbell chains stiffer than those in a single application of external field were formed in the parallel combined application of electric and magnetic fields. The orthogonal combination of the different applied fields could form a magnetically aligned chain structure of the nonmagnetic dumbbells oriented to the electric field. The present work experimentally indicated that the employment of inverse magnetorheological effect for nonmagnetic, anisotropic particles can be a useful method for the simultaneous controls over the orientation and the positon of anisotropic particles in their assembling.

  18. Semiconductor laser. Halbleiterlaser

    Energy Technology Data Exchange (ETDEWEB)

    Wuenstel, K.; Gohla, B.; Tegude, F.; Luz, G.; Hildebrand, O.

    1987-08-27

    A highly modulable semiconductor laser and a process for its manufacture are described. The semiconductor laser has a substrate, a stack of semiconductor layers and electrical contacts. To reduce the capacity, the width of the stack of semiconductor layers is reduced at the sides by anisotropic etching. The electrical contacts are situated on the same side of the substrate and are applied in the same stage of the process. The semiconductor laser is suitable for monolithic integration in other components.

  19. Novel magnetic half-metallic materials based on ionic insulators doped with nonmagnetic impurities: MgO + B, C, N Systems

    Science.gov (United States)

    Bannikov, V. V.; Shein, I. R.; Ivanovskii, A. L.

    2007-07-01

    It is established that magnesium oxide (a nonmagnetic ionic insulator) exhibits a transition to the state of a magnetic half-metal upon the introduction of nonmagnetic impurities (boron, carbon, or nitrogen) into the crystal lattice. The possibility of obtaining novel magnetic materials for spintronics by doping ionic insulators with nonmagnetic impurities is discussed.

  20. Solution-processed semiconductors for next-generation photodetectors

    Science.gov (United States)

    García de Arquer, F. Pelayo; Armin, Ardalan; Meredith, Paul; Sargent, Edward H.

    2017-01-01

    Efficient light detection is central to modern science and technology. Current photodetectors mainly use photodiodes based on crystalline inorganic elemental semiconductors, such as silicon, or compounds such as III-V semiconductors. Photodetectors made of solution-processed semiconductors — which include organic materials, metal-halide perovskites and quantum dots — have recently emerged as candidates for next-generation light sensing. They combine ease of processing, tailorable optoelectronic properties, facile integration with complementary metal-oxide-semiconductors, compatibility with flexible substrates and good performance. Here, we review the recent advances and the open challenges in the field of solution-processed photodetectors, examining the topic from both the materials and the device perspective and highlighting the potential of the synergistic combination of materials and device engineering. We explore hybrid phototransistors and their potential to overcome trade-offs in noise, gain and speed, as well as the rapid advances in metal-halide perovskite photodiodes and their recent application in narrowband filterless photodetection.

  1. Magnetic-field-controlled reconfigurable semiconductor logic.

    Science.gov (United States)

    Joo, Sungjung; Kim, Taeyueb; Shin, Sang Hoon; Lim, Ju Young; Hong, Jinki; Song, Jin Dong; Chang, Joonyeon; Lee, Hyun-Woo; Rhie, Kungwon; Han, Suk Hee; Shin, Kyung-Ho; Johnson, Mark

    2013-02-07

    Logic devices based on magnetism show promise for increasing computational efficiency while decreasing consumed power. They offer zero quiescent power and yet combine novel functions such as programmable logic operation and non-volatile built-in memory. However, practical efforts to adapt a magnetic device to logic suffer from a low signal-to-noise ratio and other performance attributes that are not adequate for logic gates. Rather than exploiting magnetoresistive effects that result from spin-dependent transport of carriers, we have approached the development of a magnetic logic device in a different way: we use the phenomenon of large magnetoresistance found in non-magnetic semiconductors in high electric fields. Here we report a device showing a strong diode characteristic that is highly sensitive to both the sign and the magnitude of an external magnetic field, offering a reversible change between two different characteristic states by the application of a magnetic field. This feature results from magnetic control of carrier generation and recombination in an InSb p-n bilayer channel. Simple circuits combining such elementary devices are fabricated and tested, and Boolean logic functions including AND, OR, NAND and NOR are performed. They are programmed dynamically by external electric or magnetic signals, demonstrating magnetic-field-controlled semiconductor reconfigurable logic at room temperature. This magnetic technology permits a new kind of spintronic device, characterized as a current switch rather than a voltage switch, and provides a simple and compact platform for non-volatile reconfigurable logic devices.

  2. Fundamentals of semiconductor devices

    CERN Document Server

    Lindmayer, Joseph

    1965-01-01

    Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.

  3. Heterogeneously integrated III-V-on-silicon 2.3x μm distributed feedback lasers based on a type-II active region

    Science.gov (United States)

    Wang, Ruijun; Sprengel, Stephan; Malik, Aditya; Vasiliev, Anton; Boehm, Gerhard; Baets, Roel; Amann, Markus-Christian; Roelkens, Gunther

    2016-11-01

    We report on 2.3x μm wavelength InP-based type-II distributed feedback (DFB) lasers heterogeneously integrated on a silicon photonics integrated circuit. In the devices, a III-V epitaxial layer stack with a "W"-shaped InGaAs/GaAsSb multi-quantum-well active region is adhesively bonded to the first-order silicon DFB gratings. Single mode laser emission coupled to a single mode silicon waveguide with a side mode suppression ratio of 40 dB is obtained. In continuous-wave regime, the 2.32 μm laser operates close to room temperature (above 15 °C) and emits more than 1 mW output power with a threshold current density of 1.8 kA/cm2 at 5 °C. A tunable diode laser absorption measurement of CO is demonstrated using this source.

  4. Estimation of Bi induced changes in the direct E0 band gap of III-V-Bi alloys and comparison with experimental data

    Science.gov (United States)

    Samajdar, D. P.; Dhar, S.

    2016-03-01

    Quantum dielectric Theory (QDT) is used to explain the band gap bowing effect observed in III-V-Bismides such as InSb1-xBix, InAs1-xBix, InP1-xBix, GaSb1-xBix, GaAs1-xBix and GaP1-xBix. The dependence of the direct E0 band gap for these alloys on Bi mole fraction is calculated using QDT which requires the evaluation of the bowing parameter c. The bowing parameter gives the deviation of the direct E0 band gap from the linear relationship of E0 with Bi mole fraction. The band gap reduction values obtained using QDT are compared with those calculated using Virtual Crystal approximation (VCA) and Valence Band Anticrossing (VBAC) model as well as with the reported experimental data and the results of the comparison shows excellent agreement.

  5. Development of Ultra-Low Noise, High Performance III-V Quantum Well Infrared Photodetectors (QWIPs) for Focal Plane Array Staring Image Sensor Systems

    Science.gov (United States)

    1993-08-01

    omem . 0o70,88 PUNK t~fq b iet fat tht ccle0l1oM of •.ea •as•fa" o0110 8 Itod =0* " 𔄂•1• 8 ao.. .1. nCfa OW totf for *Wct 811. 481JruftlC0 . Wo l...aperture sizes . Detailed results are depicted in Section 3.4. 1 5. Completed noise characterization on four different types of III-V QWIPs. From the...quantum well dopant density, biaxial strain strength, and structure parameters, the PSL-QWIPs can be used for 8-14 pm long-wavelength large size focal plane

  6. Benchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmetic circuits

    Science.gov (United States)

    Strangio, S.; Palestri, P.; Lanuzza, M.; Esseni, D.; Crupi, F.; Selmi, L.

    2017-02-01

    In this work, a benchmark for low-power digital applications of a III-V TFET technology platform against a conventional CMOS FinFET technology node is proposed. The analysis focuses on full-adder circuits, which are commonly identified as representative of the digital logic environment. 28T and 24T topologies, implemented in complementary-logic and transmission-gate logic, respectively, are investigated. Transient simulations are performed with a purpose-built test-bench on each single-bit full adder solution. The extracted delays and energy characteristics are post-processed and translated into figures-of-merit for multi-bit ripple-carry-adders. Trends related to the different full-adder implementations (for the same device technology platform) and to the different technology platforms (for the same full-adder topology) are presented and discussed.

  7. Progress and Continuing Challenges in GaSb-based III-V Alloys and Heterostructures Grown by Organometallic Vapor Phase Epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    CA Wang

    2004-05-06

    This paper discusses progress in the preparation of mid-IR GaSb-based III-V materials grown by organometallic vapor phase epitaxy (OMVPE). The growth of these materials is complex, and fundamental and practical issues associated with their growth are outlined. Approaches that have been explored to further improve the properties and performance are briefly reviewed. Recent materials and device results on GaInAsSb bulk layers and GaInAsSb/AlGaAsSb heterostructures, grown lattice matched to GaSb, are presented. State-of-the-art GaInAsSb materials and thermophotovoltaic devices have been achieved. This progress establishes the high potential of OMVPE for mid-IR GaSb-based devices.

  8. Mid-term results after operative treatment of rockwood grade III-V Acromioclavicular joint dislocations with an AC-hook-plate

    Directory of Open Access Journals (Sweden)

    Kienast B

    2011-02-01

    Full Text Available Abstract Acromioclavicular joint dislocations often occur in athletic, young patients after blunt force to the shoulder. Several static and dynamic operative procedures with or without primary ligament replacement have been described. Between February 2003 and March 2009 we treated 313 patients suffering from Rockwood III-V lesions of the AC joint with an AC-hook plate. 225 (72% of these patients could be followed up. Mean operation time was 42 minutes in the conventional group and 47 minutes in the minimal invasive group. The postoperative pain on a scale from 1 to 10 (VAS-scale was rated 2.7 in the conventional group and 2.2 in the minimal invasive group. Taft score showed very good and good results in 189 patients (84%. Constant score showed an average of 92.4 of 100 possible points with 89% excellent and good results and 11% satisfying results. All patients had some degree of pain or discomfort with the hookplate in place. These symptoms were relieved after removal of the plate. The overall complication rate was 10.6%. There were 6 superficial soft tissue infections, 1 fracture of the acromion, 7 redislocations after removal of the hook-plate. We observed 4 broken hooks which could be removed at the time of plate removal, 4 seromas and 2 cases of lateral clavicle bone infection, which required early removal of the plate. We can conclude that clavicle hook plate is a convenient device for the surgical treatment of Rockwood Grade III-V dislocations, giving good mid-term results with a low overall complication rate compared to the literature. Early functional therapy is possible and can avoid limitations in postoperative shoulder function.

  9. Effects of brining on the corrosion of ZVI and its subsequent As(III/V) and Se(IV/VI) removal from water.

    Science.gov (United States)

    Yang, Zhe; Xu, Hui; Shan, Chao; Jiang, Zhao; Pan, Bingcai

    2017-03-01

    Zero-valent iron (ZVI) has been extensively applied in water remediation, and most of the ZVI materials employed in practical applications are iron scraps, which have usually been corroded to certain extent under different conditions. In this study, the effects of brining with six solutions (NaCl, Na2SO4, NaHCO3, Na2SiO3, NH4Cl, and NaH2PO4) on the corrosion of ZVI and its performance in the removal of As(III/V)/Se(IV/VI) were systematically investigated. All the studied solutions enhanced the corrosion of ZVI except for Na2SiO3, and the degrees of corrosion followed the order of NH4Cl > NaH2PO4 > Na2SO4 > NaCl > NaHCO3 > H2O > Na2SiO3. The corrosion products derived from ZVI were identified by SEM and XRD, and the dominant corrosion products varied with the type of brine solution. The positive correlation between the degree of ZVI corrosion and As(III/V)/Se(IV/VI) removal by the pre-corroded ZVI (pcZVI) was verified. In addition, As and Se removal by pcZVI was realized via a comprehensive process including adsorption and reduction, as further supported by the XPS analysis. We believe this study will shed new light upon the selection of iron materials pre-corroded under different saline conditions for practical water remediation. Copyright © 2016 Elsevier Ltd. All rights reserved.

  10. Nonmagnetic rigid and flexible outer sheath with pneumatic interlocking mechanism for minimally invasive surgical approach.

    Science.gov (United States)

    Yamashita, Hiromasa; Zuo, Siyang; Masamune, Ken; Liao, Hongen; Dohi, Takeyoshi

    2009-01-01

    We developed a nonmagnetic rigid and flexible outer sheath with pneumatic interlocking mechanism using flexible toothed links and a wire-driven bending distal end. The outer sheath can be switched between rigid and flexible modes easily depending on surgical scenes, and the angle of its distal end can be controlled by three nylon wires. All components of flexible parts are made of MRI-compatible nonmagnetic plastics. We manufactured the device with 300-mm long, 16-mm outer diameter, 7-mm inner diameter and 90-mm bending distal end. Holding power of the device in rigid mode was maximum 3.6 N, which was sufficient for surgical tasks in body cavity. In vivo experiment using a swine, our device performed smooth insertion of a flexible endoscope and a biopsy forceps into reverse side of the liver, intestines and spleen with a curved path. In conclusion, our device shows availability of secure approach of surgical instruments into deep cavity.

  11. Designing the coordinate transformation function for non-magnetic invisibility cloaking

    Energy Technology Data Exchange (ETDEWEB)

    Xu Xiaofei; Feng Yijun; Zhao Lin; Jiang Tian [Department of Electronic Science and Engineering, Nanjing University, Nanjing, 210093 (China); Lu Chunhua; Xu Zhongzi [College of Materials Science and Engineering, Nanjing University of Technology, Nanjing, 210009 (China)], E-mail: yjfeng@nju.edu.cn

    2008-11-07

    An optical invisibility cloak based on a transformation approach has recently been proposed by a reduced set of material properties due to their easier implementation in reality and little need for an inhomogeneous permeability distribution, but the drawback of undesired scattering caused by the impedance mismatching at the outer boundary is unavoidable in such a cloak. By properly designing the coordinate transformation function to ensure impedance matching at the outer surface, we show that the performance of a nonmagnetic cylindrical cloak could be improved with minimized scattering fields. Using either a single high order power function or an optimized piecewise continuous power function, a cylindrical non-magnetic cloak has been designed with nearly perfect cloaking performance, which is better than those generated with a linear or a quadratic function. Due to the monotonicity of the designed power functions, the resulting cloak has no restriction on the size of the cloaking shell, therefore is suitable for both thick and thin cloaking structures.

  12. Magnetic-Field-Modulated Resonant Tunneling in Ferromagnetic-Insulator-Nonmagnetic Junctions

    Science.gov (United States)

    Song, Yang; Dery, Hanan

    2014-07-01

    We present a theory for resonance-tunneling magnetoresistance (MR) in ferromagnetic-insulator-nonmagnetic junctions. The theory sheds light on many of the recent electrical spin injection experiments, suggesting that this MR effect rather than spin accumulation in the nonmagnetic channel corresponds to the electrically detected signal. We quantify the dependence of the tunnel current on the magnetic field by quantum rate equations derived from the Anderson impurity model, with the important addition of impurity spin interactions. Considering the on-site Coulomb correlation, the MR effect is caused by competition between the field, spin interactions, and coupling to the magnetic lead. By extending the theory, we present a basis for operation of novel nanometer-size memories.

  13. Thermal spin current and spin accumulation at ferromagnetic insulator/nonmagnetic metal interface

    Science.gov (United States)

    Shen, Y. H.; Wang, X. S.; Wang, X. R.

    2016-07-01

    Spin current injection and spin accumulation near a ferromagnetic insulator (FI)/nonmagnetic metal (NM) bilayer film under a thermal gradient is investigated theoretically. By using the Fermi golden rule and the Boltzmann equations, we find that FI and NM can exchange spins via interfacial electron-magnon scattering because of the imbalance between magnon emission and absorption caused by either the deviation of the magnon number from the equilibrium Bose-Einstein distribution or the difference in magnon temperature and electron temperature. A temperature gradient in FI and/or a temperature difference across the FI/NM interface generates a spin current which carries angular momenta parallel to the magnetization of FI from the hotter side to the colder one. Interestingly, the spin current induced by a temperature gradient in NM is negligibly small due to the nonmagnetic nature of the nonequilibrium electron distributions. The results agree well with all existing experiments.

  14. Radiation-Suppressed plasmonic open resonators designed by nonmagnetic transformation optics

    Science.gov (United States)

    Xu, Hongyi; Wang, Xingjue; Yu, Tianyuan; Sun, Handong; Zhang, Baile

    2012-01-01

    How to confine light energy associated with surface plasmon polaritons (SPPs) in a physical space with minimal radiation loss whereas creating maximum interacting section with surrounding environment is of particular interest in plasmonic optics. By virtue of transformation optics, we propose a design method of forming a polygonal surface-plasmonic resonator in fully open structures by applying the nonmagnetic affine transformation optics strategy. The radiation loss can be suppressed because SPPs that propagate in the designed open structures will be deceived as if they were propagating on a flat metal/dielectric interface without radiation. Because of the nonmagnetic nature of the transformation strategy, this design can be implemented with dielectric materials available in nature. An experimentally verifiable model is subsequently proposed for future experimental demonstration. Our design may find potential applications in omnidirectional sensing, light harvesting, energy storage and plasmonic lasing. PMID:23136641

  15. Enhanced spin-torque in double tunnel junctions using a nonmagnetic-metal spacer

    Energy Technology Data Exchange (ETDEWEB)

    Chen, C. H.; Cheng, Y. H.; Ko, C. W.; Hsueh, W. J., E-mail: hsuehwj@ntu.edu.tw [Nanomagnetism Group, Department of Engineering Science and Ocean Engineering, National Taiwan University, 1, Sec. 4, Roosevelt Road, Taipei 10660, Taiwan (China)

    2015-10-12

    This study proposes an enhancement in the spin-transfer torque of a magnetic tunnel junction (MTJ) designed with double-barrier layer structure using a nonmagnetic metal spacer, as a replacement for the ferromagnetic material, which is traditionally used in these double-barrier stacks. Our calculation results show that the spin-transfer torque and charge current density of the proposed double-barrier MTJ can be as much as two orders of magnitude larger than the traditional double-barrier one. In other words, the proposed double-barrier MTJ has a spin-transfer torque that is three orders larger than that of the single-barrier stack. This improvement may be attributed to the quantum-well states that are formed in the nonmagnetic metal spacer and the resonant tunneling mechanism that exists throughout the system.

  16. Hidden spin polarization in nonmagnetic centrosymmetric BaNiS2 crystal: Signatures from first principles

    Science.gov (United States)

    Sławińska, Jagoda; Narayan, Awadhesh; Picozzi, Silvia

    2016-12-01

    The recent discovery of hidden spin polarization emerging in bulk electronic states of specific nonmagnetic crystals is a fascinating phenomenon, though hardly explored yet. Here, we study from a theoretical perspective nonmagnetic BaNiS2, recently suggested to exhibit a giant Rashba-like spin-orbit splitting of the bulk bands, despite the absence of heavy elements. We employ density functional theory and Green's functions calculations to reveal the exact spin textures of both bulk and surface. We predict unambiguous signatures of spin-polarized electronic states at the surface, which reflect the bulk Rashba splitting and which could be experimentally measured with sufficient resolution: this would constitute a clear report of a bulk-Rashba-induced spin splitting at the surface of centrosymmetric crystals.

  17. Raising the one-sun conversion efficiency of III-V/Si solar cells to 32.8% for two junctions and 35.9% for three junctions

    Science.gov (United States)

    Essig, Stephanie; Allebé, Christophe; Remo, Timothy; Geisz, John F.; Steiner, Myles A.; Horowitz, Kelsey; Barraud, Loris; Ward, J. Scott; Schnabel, Manuel; Descoeudres, Antoine; Young, David L.; Woodhouse, Michael; Despeisse, Matthieu; Ballif, Christophe; Tamboli, Adele

    2017-09-01

    Today's dominant photovoltaic technologies rely on single-junction devices, which are approaching their practical efficiency limit of 25-27%. Therefore, researchers are increasingly turning to multi-junction devices, which consist of two or more stacked subcells, each absorbing a different part of the solar spectrum. Here, we show that dual-junction III-V//Sidevices with mechanically stacked, independently operated III-V and Si cells reach cumulative one-sun efficiencies up to 32.8%. Efficiencies up to 35.9% were achieved when combining a GaInP/GaAs dual-junction cell with a Si single-junction cell. These efficiencies exceed both the theoretical 29.4% efficiency limit of conventional Si technology and the efficiency of the record III-V dual-junction device (32.6%), highlighting the potential of Si-based multi-junction solar cells. However, techno-economic analysis reveals an order-of-magnitude disparity between the costs for III-V//Si tandem cells and conventional Si solar cells, which can be reduced if research advances in low-cost III-V growth techniques and new substrate materials are successful.

  18. Semiconductor-metal and semiconductor-magnetic half-metal phase transitions in layered SrAgSeF phases doped with oxygen and nitrogen

    Science.gov (United States)

    Bannikov, V. V.; Ivanovskii, A. L.

    2012-11-01

    Results of ab initio band calculations for a layered nonmagnetic SrAgSeF semiconductors consisting of [SrF]/[AgSe] alternating blocks show that the partial O → F substitution leads to a semiconductormetal phase transition due to "metallization" of the [AgSe] bocks. The oxygen-doped SrAgSeF1 - x O x phase possesses a metal/semiconductor periodic structure formed by alternating [AgSe] and [SrF1 - x O x ] blocks, respectively. On the contrary, the partial N → F substitution induces a semiconductor-magnetic half-metal phase transition. The resulting SrAgSeF1 - x N x system may be of interest as a new material for spintronics.

  19. Temperature profile along an induction heated, moving non-magnetic charge

    Energy Technology Data Exchange (ETDEWEB)

    Januszkiewicz, K.

    1984-01-01

    Induction heating system, comprising three sections of a heating coil connected in series and supplied from one source, will be discussed. The charge to be heated is a non-magnetic pipe moving with steady speed. The heating coil is water cooled. Digital methods are used to compute temperature variations along the charge from start up to steady state temperature and also to determine power development in the heating circuit. Cooling zones between the heating coil sections are taken into account.

  20. Simulation of Electron Beam Dynamics in a Nonmagnetized High-Current Vacuum Diode

    CERN Document Server

    Anishchenko, Sergey

    2016-01-01

    The electron beam dynamics in a nonmagnetized high-current vacuum diode is analyzed for different cathode-anode gap geometries. The conditions enabling to achieve the minimal {initial} momentum spread in the electron beam are found out. A drastic rise of current density in a vacuum diode with a ring-type cathode is described. The effect is shown to be caused by electrostatic repulsion.

  1. The space density and X-ray luminosity function of non-magnetic cataclysmic variables

    CERN Document Server

    Pretorius, Magaretha L

    2011-01-01

    We combine two complete, X-ray flux-limited surveys, the ROSAT Bright Survey (RBS) and the ROSAT North Ecliptic Pole (NEP) survey, to measure the space density (\\rho) and X-ray luminosity function (\\Phi) of non-magnetic CVs. The combined survey has a flux limit of F_X \\ga 1.1 \\times 10^{-12} erg cm^{-2}s^{-1} over most of its solid angle of just over 2\\pi, but is as deep as \\simeq 10^{-14} erg cm^{-2}s^{-1} over a small area. The CV sample that we construct from these two surveys contains 20 non-magnetic systems. We carefully include all sources of statistical error in calculating \\rho and \\Phi by using Monte Carlo simulations; the most important uncertainty proves to be the often large errors in distances estimates. If we assume that the 20 CVs in the combined RBS and NEP survey sample are representative of the intrinsic population, the space density of non-magnetic CVs is 4^{+6}_{-2} \\times 10^{-6} pc^{-3}. We discuss the difficulty in measuring \\Phi in some detail---in order to account for biases in the me...

  2. Valley and spin resonant tunneling current in ferromagnetic/nonmagnetic/ferromagnetic silicene junction

    Directory of Open Access Journals (Sweden)

    Yaser Hajati

    2016-02-01

    Full Text Available We study the transport properties in a ferromagnetic/nonmagnetic/ferromagnetic (FNF silicene junction in which an electrostatic gate potential, U, is attached to the nonmagnetic region. We show that the electrostatic gate potential U is a useful probe to control the band structure, quasi-bound states in the nonmagnetic barrier as well as the transport properties of the FNF silicene junction. In particular, by introducing the electrostatic gate potential, both the spin and valley conductances of the junction show an oscillatory behavior. The amplitude and frequency of such oscillations can be controlled by U. As an important result, we found that by increasing U, the second characteristic of the Klein tunneling is satisfied as a result of the quasiparticles chirality which can penetrate through a potential barrier. Moreover, it is found that for special values of U, the junction shows a gap in the spin and valley-resolve conductance and the amplitude of this gap is only controlled by the on-site potential difference, Δz. Our findings of high controllability of the spin and valley transport in such a FNF silicene junction may improve the performance of nano-electronics and spintronics devices.

  3. A review of thermal processing in the subsecond range: semiconductors and beyond

    Science.gov (United States)

    Rebohle, Lars; Prucnal, Slawomir; Skorupa, Wolfgang

    2016-10-01

    Thermal processing in the subsecond range comprises modern, non-equilibrium annealing techniques which allow various material modifications at the surface without affecting the bulk. Flash lamp annealing (FLA) is one of the most diverse methods for short-time annealing with applications ranging from the classical field of semiconductor doping to the treatment of polymers and flexible substrates. It still continues to extend its use to other material classes and applications, and is becoming of interest for an increasing number of users. In this review we present a short, but comprehensive and consistent picture of the current state-of-the-art of FLA, sometimes also called pulsed light sintering. In the first part we take a closer look at the physical and technological background, namely the electrical and optical specifications of flash lamps, the resulting temperature profiles, and the corresponding implications for process-relevant parameters such as reproducibility and homogeneity. The second part briefly considers the various applications of FLA, starting with the classical task of defect minimization and ultra-shallow junction formation in Si, followed by further applications in Si technology, namely in the fields of hyperdoping, crystallization of thin amorphous films, and photovoltaics. Subsequent chapters cover the topics of doping and crystallization in Ge and silicon carbide, doping of III-V semiconductors, diluted magnetic semiconductors, III-V nanocluster synthesis in Si, annealing of transparent conductive oxides and high-k materials, nanoclusters in dielectric matrices, and the use of FLA for flexible substrates.

  4. Quantum processes in semiconductors

    CERN Document Server

    Ridley, B K

    2013-01-01

    Aimed at graduate students, this is a guide to quantum processes of importance in the physics and technology of semiconductors. The fifth edition includes new chapters that expand the coverage of semiconductor physics relevant to its accompanying technology.

  5. Fowler-Nordheim field emission. Effects in semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Bhattacharya, Sitangshu [Indian Institute of Science, Bangalore (India). Nano Scale Device Research Laboratory; Ghatak, Kamakhya Prasad [Calcutta Univ. (India). Dept. of Electronics Science

    2012-07-01

    This monograph solely presents the Fowler-Nordheim field emission (FNFE) from semiconductors and their nanostructures. The materials considered are quantum confined non-linear optical, III-V, II-VI, Ge, Te, carbon nanotubes, PtSb{sub 2}, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V, Bi{sub 2}Te{sub 3}, III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices under magnetic quantization and quantum wires of the aforementioned superlattices. The FNFE in opto-electronic materials and their quantum confined counterparts is studied in the presence of light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The importance of band gap measurements in opto-electronic materials in the presence of external fields is discussed from this perspective. This monograph contains 200 open research problems which form the very core and are useful for Ph. D students and researchers. The book can also serve as a basis for a graduate course on field emission from solids. (orig.)

  6. Fowler-Nordheim field emission effects in semiconductor nanostructures

    CERN Document Server

    Bhattacharya, Sitangshu

    2012-01-01

    This monograph solely presents the Fowler-Nordheim field emission (FNFE) from semiconductors and their nanostructures. The materials considered are quantum confined non-linear optical, III-V, II-VI, Ge, Te, carbon nanotubes, PtSb2, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V, Bi2Te3, III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices under magnetic quantization and quantum wires of the aforementioned superlattices. The FNFE in opto-electronic materials and their quantum confined counterparts is studied in the presence of light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The importance of band gap measurements in opto-electronic materials in the presence of external fields is discussed from this perspective. This monograph contains 200 open research problems which form the very core and are useful for Ph. D students and researchers. The boo...

  7. Magnetoresistance generated from charge-spin conversion by anomalous Hall effect in metallic ferromagnetic/nonmagnetic bilayers

    Science.gov (United States)

    Taniguchi, Tomohiro

    2016-11-01

    A theoretical formulation of magnetoresistance effect in a metallic ferromagnetic/nonmagnetic bilayer originated from the charge-spin conversion by the anomalous Hall effect is presented. Analytical expressions of the longitudinal and transverse resistivities in both nonmagnet and ferromagnet are obtained by solving the spin diffusion equation. The magnetoresistance generated from charge-spin conversion purely caused by the anomalous Hall effect in the ferromagnet is found to be proportional to the square of the spin polarizations in the ferromagnet and has fixed sign. We also find additional magnetoresistances in both nonmagnet and ferromagnet arising from the mixing of the spin Hall and anomalous Hall effects. The sign of this mixing resistance depends on those of the spin Hall angle in the nonmagnet and the spin polarizations of the ferromagnet.

  8. Symmetry breaking of ionic semiconductors under pressure: the case of InAs

    Energy Technology Data Exchange (ETDEWEB)

    Libotte, H; Gaspard, J P [Condensed Matter Physics Laboratory, University of Liege, B5, B-4000 Sart-Tilman (Belgium); Aquilanti, G; Pascarelli, S; Crichton, W A; Le Bihan, T [European Synchrotron Radiation Facility, F-38043 Grenoble (France)

    2009-12-02

    The NaCl-to-Cmcm phase transition and the Cmcm structure of InAs under high pressure are studied by x-ray diffraction. The lattice parameters and fractional coordinates are given as a function of pressure. We propose a mechanism responsible for this type of symmetry breaking under pressure. We show that the ppsigma interactions do not play a major role in the stabilization of the NaCl structure. Consequently the NaCl-to-Cmcm transition occurs only in compounds with a large charge transfer. General conclusions on the behavior of III-V semiconductors under pressure are drawn.

  9. Ab initio search for novel bipolar magnetic semiconductors: Layered YZnAsO doped with Fe and Mn

    Science.gov (United States)

    Bannikov, V. V.; Ivanovskii, A. L.

    2013-02-01

    Very recently, the newest class of spintronic materials, where reversible spin polarization can be controlled by applying gate voltage: so-called bipolar magnetic semiconductors (Xingxing Li et al., arXiv:1208.1355) was proposed. In this work, a novel way to creation of bipolar magnetic semiconductors by doping of non-magnetic semiconducting 1111 phases with magnetic d n < 10 atoms is discussed using ab initio calculations of layered YZnAsO doped with Fe and Mn. In addition, more complex materials with several spectral intervals with opposite 100% spin polarization where multiple gate-controlled spin-polarization can be expected are proposed.

  10. Unitary lens semiconductor device

    Science.gov (United States)

    Lear, Kevin L.

    1997-01-01

    A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.

  11. Mechanisms of double magnetic exchange in dilute magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Fleurov, V. E-mail: fleurov@post.tau.ac.il; Kikoin, K.; Ivanov, V.A.; Krstajic, P.M.; Peeters, F.M

    2004-05-01

    A microscopic Hamiltonian for interacting manganese impurities in dilute magnetic semiconductors (DMS) is derived. It is shown that in p-type III-V DMS, the indirect exchange between Mn impurities has similarities with the Zener mechanism in transition metal oxides. Here the mobile and localized holes near the top of the valence band play the role of unoccupied p-orbitals which induce ferromagnetism. T{sub c} estimated from the proposed kinematic exchange agrees with experiments on (Ga,Mn)As. The model is also applicable to the p-doped (Ga,Mn)P system. The magnetic ordering in n-type (Ga,Mn)N is due to exchange between the electrons localized on the levels lying deep in the forbidden energy gap. This mechanism is even closer to the original Zener mechanism.

  12. Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer

    Science.gov (United States)

    Spahn, Olga B.; Lear, Kevin L.

    1998-01-01

    A semiconductor structure. The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g. Al.sub.2 O.sub.3), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3-1.6 .mu.m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation.

  13. Influence of light on the Einstein relation in III V, ternary and quaternary materials: Simplified theory and a suggestion for experimental determination

    Science.gov (United States)

    Mukherjee, S.; De, D.; Mukherjee, D. J.; Bhattacharya, S.; Sinha, A.; Ghatak, K. P.

    2007-04-01

    We study theoretically the energy spectrum of the conduction electrons and the Einstein relation for the diffusivity-mobility ratio (DMR) for III-V, ternary and quaternary materials, whose unperturbed energy band structures are defined by the three-band model of Kane, in the presence of light waves. The solution of the Boltzmann transport equation on the basis of this newly formulated electron dispersion law will introduce new physical ideas and experimental findings under different external conditions. It has been observed that the unperturbed isotropic energy spectrum in the presence of light changes into an anisotropic dispersion relation with the energy-dependent mass anisotropy. It has been found taking n-InAs, n-InSb, n-Hg 1-xCd xTe and n-In 1-xGa xAs yP 1-y lattice matched to InP, as examples that the DMR increases with increasing electron concentration, decreasing with increasing intensity and wavelength in various manners. The rate of change is totally band structure dependent and is influenced by the presence of the different energy band constants. The well-known result for the DMR for degenerate wide gap materials in the absence of light waves has been obtained as a special case of the present analysis under certain limiting conditions and this compatibility is the indirect test of our generalized formalism. Besides, we have suggested an experimental method of determining the DMR in degenerate materials having arbitrary dispersion laws.

  14. Co-integrated 1.3µm hybrid III-V/silicon tunable laser and silicon Mach-Zehnder modulator operating at 25Gb/s.

    Science.gov (United States)

    Ferrotti, Thomas; Blampey, Benjamin; Jany, Christophe; Duprez, Hélène; Chantre, Alain; Boeuf, Frédéric; Seassal, Christian; Ben Bakir, Badhise

    2016-12-26

    In this paper, the 200mm silicon-on-insulator (SOI) platform is used to demonstrate the monolithic co-integration of hybrid III-V/silicon distributed Bragg reflector (DBR) tunable lasers and silicon Mach-Zehnder modulators (MZMs), to achieve fully integrated hybrid transmitters for silicon photonics. The design of each active component, as well as the fabrication process steps of the whole architecture are described in detail. A data transmission rate up to 25Gb/s has been reached for transmitters using MZMs with active lengths of 2mm and 4mm. Extinction ratios of respectively 2.9dB and 4.7dB are obtained by applying drive voltages of 2.5V peak-to-peak on the MZMs. 25Gb/s data transmission is demonstrated at 1303.5nm and 1315.8nm, with the possibility to tune the operating wavelength by up to 8.5nm in each case, by using metallic heaters above the laser Bragg reflectors.

  15. Monolithic integration of hybrid III-V/Si lasers and Si-based modulators for data transmission up to 25Gbps

    Science.gov (United States)

    Ferrotti, Thomas; Blampey, Benjamin; Jany, Christophe; Duprez, Hélène; Chantre, Alain; Boeuf, Frédéric; Seassal, Christian; Ben Bakir, Badhise

    2017-02-01

    In this paper, the 200mm silicon-on-insulator (SOI) platform is used to demonstrate the monolithic co-integration of hybrid III-V/silicon Distributed Bragg Reflector (DBR) tunable lasers and silicon Mach-Zehnder modulator (MZMs), to achieve fully integrated hybrid transmitters for silicon photonics. The design of each active component, as well as the fabrication process steps of the whole architecture are described in details. Data transmission rate up to 25Gb/s has been reached for transmitters using MZMs with active lengths of 2mm and 4mm. Extinction ratios of respectively 2.9dB and 4.7dB are obtained by applying drive voltages of 2.5V peak-to-peak on the MZMs. 25Gb/s data transmission is demonstrated at 1303.5nm and 1315.8nm, with the possibility to tune the operating wavelength by up to 8.5nm in each case, by using metallic heaters above the lasers Bragg reflectors.

  16. Non-magnetic simplified cylindrical cloak with suppressed zero-th order scattering

    CERN Document Server

    Yan, Wei; Qiu, Min

    2008-01-01

    A new type of simplified cloaks with matched exterior boundaries is proposed. The cloak uses non-magnetic material for the TM polarization and can function with a relatively thin thickness. It is shown that the $zero^{th}$ order scattering of such cloak is dominant among all cylindrical scattering terms. A gap is added at the cloak's inner surface to eliminate the zero-th order scattering, through the mechanism of scattering resonance. The reduction in scattering is relatively smooth, indicating that the proposed scattering reduction method has good tolerance to perturbations. Numerical simulations also confirm that the proposed structure has very low scattering.

  17. Few-layer graphene shells and nonmagnetic encapsulates: a versatile and nontoxic carbon nanomaterial.

    Science.gov (United States)

    Bachmatiuk, Alicja; Mendes, Rafael G; Hirsch, Cordula; Jähne, Carsten; Lohe, Martin R; Grothe, Julia; Kaskel, Stefan; Fu, Lei; Klingeler, Rüdiger; Eckert, Jürgen; Wick, Peter; Rümmeli, Mark H

    2013-12-23

    In this work a simple and scalable approach to coat nonmagnetic nanoparticles with few-layer graphene is presented. In addition, the easy processing of such nanoparticles to remove their core, leaving only the 3D graphene nanoshell, is demonstrated. The samples are comprehensively characterized, as are their versatility in terms of functionalization and as a material for electrochemical storage. Indeed, these 3D graphene nanostructures are easily functionalized much as is found with carbon nanotubes and planar graphene. Electrochemical investigations indicate these nanostructures are promising for stable long-life battery applications. Finally, initial toxicological investigations suggest no acute health risk from these 3D graphene nanostructures.

  18. Magnetism of Rare-Earth Compounds with Non-Magnetic Crystal-Field Ground Levels

    Institute of Scientific and Technical Information of China (English)

    LIU Zhao-Sen

    2007-01-01

    @@ Among rare-earth compounds, there are many materials having non-magnetic crystal-field (CF) ground levels.To understand their magnetic behaviour at low temperatures, we study the effects of the CF levels and the Heisenberg-like coupling on the magnetic process of such a crystalline with mean-field and CF theory. It is found that the material can be magnetically ordered if the Heisenberg exchange is sufficiently strong. Additionally we obtain a condition for initial magnetic ordering, and derive a formula for estimating the Curie temperature if the ordering occurs.

  19. Spin-current-induced magnetoresistance in trilayer structure with nonmagnetic metallic interlayer

    Science.gov (United States)

    Iguchi, Ryo; Sato, Koji; Uchida, Ken-ichi; Saitoh, Eiji

    2017-04-01

    We have theoretically investigated the spin Hall magnetoresistance (SMR) and Rashba–Edelstein magnetoresistance (REMR), mediated by spin currents, in a ferrimagnetic insulator/nonmagnetic metal/heavy metal system in the diffusive regime. The magnitude of both SMR and REMR decreases with increasing thickness of the interlayer because of the current shunting effect and the reduction in spin accumulation across the interlayer. The latter contribution is due to driving a spin current and persists even in the absence of spin relaxation, which is essential for understanding the magnetoresistance ratio in trilayer structures.

  20. Position feedback control of a nonmagnetic body levitated in magnetic fluid

    Energy Technology Data Exchange (ETDEWEB)

    Lee, J H; Nam, Y J; Park, M K [Graduate School, Pusan National University, Busan 609-735 (Korea, Republic of); Yamane, R [Kokushikan University, Tokyo 154-8515 (Japan)], E-mail: magooro@pusan.ac.kr

    2009-02-01

    This paper is concerned with the position feedback control of a magnetic fluid actuator which is characterized by the passive levitation of a nonmagnetic body immersed in a magnetic fluid under magnetic fields. First of all, the magnetic fluid actuator is designed based on the ferrohydrostatic relation. After manufacturing the actuator, its static and dynamic characteristics are investigated experimentally. With the aid of the dynamic governing relation obtained experimentally and the proportional-derivative controller, the position tracking control of the actuator is carried out both theoretically and experimentally. As a result, the applicability of the proposed magnetic fluid actuator to various engineering devices is verified.

  1. The space density and X-ray luminosity function of non-magnetic cataclysmic variables

    Science.gov (United States)

    Pretorius, Magaretha L.; Knigge, Christian

    2012-01-01

    We combine two complete, X-ray flux-limited surveys, the ROSAT Bright Survey (RBS) and the ROSAT North Ecliptic Pole (NEP) survey, to measure the space density (ρ) and X-ray luminosity function (Φ) of non-magnetic cataclysmic variables (CVs). The combined survey has a flux limit of FX≳ 1.1 × 10-12 erg cm-2 s-1 over most of its solid angle of just over ?, but is as deep as ≃10-14 erg cm-2 s-1 over a small area. The CV sample that we construct from these two surveys contains 20 non-magnetic systems. We carefully include all sources of statistical error in calculating ρ and Φ by using Monte Carlo simulations; the most important uncertainty proves to be the often large errors in distances estimates. If we assume that the 20 CVs in the combined RBS and NEP survey sample are representative of the intrinsic population, the space density of non-magnetic CVs is ?. We discuss the difficulty in measuring Φ in some detail - in order to account for biases in the measurement, we have to adopt a functional form for Φ. Assuming that the X-ray luminosity function of non-magnetic CVs is a truncated power law, we constrain the power-law index to -0.80 ± 0.05. It seems likely that the two surveys have failed to detect a large, faint population of short-period CVs, and that the true space density may well be a factor of 2 or 3 larger than what we have measured; this is possible, even if we only allow for undetected CVs to have X-ray luminosities in the narrow range 28.7 log(LX/erg s-1) < 29.7. However, ρ as high as 2 × 10-4 pc-3 would require that the majority of CVs has X-ray luminosities below LX= 4 × 1028 erg s-1 in the 0.5-2.0 keV band.

  2. Induction heating of rotating nonmagnetic billet in magnetic field produced by high-parameter permanent magnets

    Directory of Open Access Journals (Sweden)

    Ivo Doležel

    2014-04-01

    Full Text Available An advanced way of induction heating of nonmagnetic billets is discussed and modeled. The billet rotates in a stationary magnetic field produced by unmoving high-parameter permanent magnets fixed on magnetic circuit of an appropriate shape. The mathematical model of the problem consisting of two coupled partial differential equations is solved numerically, in the monolithic formulation. Computations are carried out using our own code Agros2D based on a fully adaptive higher-order finite element method. The most important results are verified experimentally on our own laboratory device.

  3. “Direct modulation of a hybrid III-V/Si DFB laser with MRR filtering for 22.5-Gb/s error-free dispersion-uncompensated transmission over 2.5-km SSMF

    DEFF Research Database (Denmark)

    Cristofori, Valentina; Da Ros, Francesco; Ding, Yunhong;

    2016-01-01

    Error-free and penalty-free transmission over 2.5 km SSMF of a 22.5 Gb/s data signal from a directly modulated hybrid III-V/Si DFB laser is achieved by enhancing the dispersion tolerance using a silicon micro-ring resonator....

  4. “Direct modulation of a hybrid III-V/Si DFB laser with MRR filtering for 22.5-Gb/s error-free dispersion-uncompensated transmission over 2.5-km SSMF

    DEFF Research Database (Denmark)

    Cristofori, Valentina; Da Ros, Francesco; Ding, Yunhong

    2016-01-01

    Error-free and penalty-free transmission over 2.5 km SSMF of a 22.5 Gb/s data signal from a directly modulated hybrid III-V/Si DFB laser is achieved by enhancing the dispersion tolerance using a silicon micro-ring resonator....

  5. The Einstein relation in quantum wires of III-V, ternary, and quaternary materials in the presence of light waves: Simplified theory, relative comparison, and suggestion for experimental determination

    NARCIS (Netherlands)

    Ghatak, K.P.; Bhattacharya, S.; Bhowmik, S.; Benedictus, R.; Choudhury, S.

    2008-01-01

    We study the Einstein relation for the diffusivity to mobility ratio (DMR) in quantum wires (QWs) of III-V, ternary, and quaternary materials in the presence of light waves, whose unperturbed energy band structures are defined by the three band model of Kane. It has been found, taking n-InAs, n-InSb

  6. Nanoscale Semiconductor Electronics

    Science.gov (United States)

    2015-02-25

    create a brand -new process technology for the nano- fabrication of III-V devices. The radiation effects on these devices has been tested in AFRL...34Hydrolization oxidation of AlxGa1-xAs/GaAs quantum well heterostructures and superlattices," Appl . Phys. Lett. 57, 2844, 1990. [7] H. Wada and T. Kamijoh...942, Jun 1997. [8] H. Wada and T. Kamijoh, “Effects of Heat Treatment on Bonding Properties in InP-to- Si Direct Wafer Bonding,” Jpn. J. Appl

  7. Semiconductor Physical Electronics

    CERN Document Server

    Li, Sheng

    2006-01-01

    Semiconductor Physical Electronics, Second Edition, provides comprehensive coverage of fundamental semiconductor physics that is essential to an understanding of the physical and operational principles of a wide variety of semiconductor electronic and optoelectronic devices. This text presents a unified and balanced treatment of the physics, characterization, and applications of semiconductor materials and devices for physicists and material scientists who need further exposure to semiconductor and photonic devices, and for device engineers who need additional background on the underlying physical principles. This updated and revised second edition reflects advances in semicondutor technologies over the past decade, including many new semiconductor devices that have emerged and entered into the marketplace. It is suitable for graduate students in electrical engineering, materials science, physics, and chemical engineering, and as a general reference for processing and device engineers working in the semicondi...

  8. Semiconductor Electrical Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Electrical Measurements Laboratory is a research laboratory which complements the Optical Measurements Laboratory. The laboratory provides for Hall...

  9. Semiconductor bridge (SCB) detonator

    Science.gov (United States)

    Bickes, Jr., Robert W.; Grubelich, Mark C.

    1999-01-01

    The present invention is a low-energy detonator for high-density secondary-explosive materials initiated by a semiconductor bridge igniter that comprises a pair of electrically conductive lands connected by a semiconductor bridge. The semiconductor bridge is in operational or direct contact with the explosive material, whereby current flowing through the semiconductor bridge causes initiation of the explosive material. Header wires connected to the electrically-conductive lands and electrical feed-throughs of the header posts of explosive devices, are substantially coaxial to the direction of current flow through the SCB, i.e., substantially coaxial to the SCB length.

  10. Contribution to the study of electronic structure of crystalline semiconductors (Si, Ge, GaAs, Gap, ZnTe, ZnSe

    Directory of Open Access Journals (Sweden)

    Bouhafs B.

    2012-06-01

    Full Text Available The band structure of semiconductors was described by several theorists since the Fifties. The main objective of the present paper is to do a comparative study between various families of semi-conductors IV (Si,Ge, III-V (GaAs, GaP and II-VI (ZnSe, ZnTe with both methods; tight Binding1 method and pseudo potential method2. This work enables us to understand as well as the mechanism of conduction process in these semiconductors and powers and limits of the above methods. The obtained results allow to conclude that both methods are in a good agreement to describe the morphology of band structures of the cited semiconductors. This encourages us to study in the future the electronic behaviour through the structure of bands for more complex systems such as the heterostructures.

  11. Anomalous Localized Resonance Phenomena in the Nonmagnetic, Finite-Frequency Regime

    Directory of Open Access Journals (Sweden)

    Daniel Onofrei

    2016-01-01

    Full Text Available The phenomenon of anomalous localized resonance (ALR is observed at the interface between materials with positive and negative material parameters and is characterized by the fact that when a given source is placed near the interface, the electric and magnetic fields start to have very fast and large oscillations around the interface as the absorption in the materials becomes very small while they remain smooth and regular away from the interface. In this paper, we discuss the phenomenon of anomalous localized resonance (ALR in the context of an infinite slab of homogeneous, nonmagnetic material (μ=1 with permittivity ϵs=-1-iδ for some small loss δ≪1 surrounded by positive, nonmagnetic, homogeneous media. We explicitly characterize the limit value of the product between frequency and the width of slab beyond which the ALR phenomenon does not occur and analyze the situation when the phenomenon is observed. In addition, we also construct sources for which the ALR phenomenon never appears.

  12. Kramers non-magnetic superconductivity in LnNiAsO superconductors.

    Science.gov (United States)

    Li, Yuke; Luo, Yongkang; Li, Lin; Chen, Bin; Xu, Xiaofeng; Dai, Jianhui; Yang, Xiaojun; Zhang, Li; Cao, Guanghan; Xu, Zhu-an

    2014-10-22

    We investigated a series of nickel-based oxyarsenides LnNiAsO (Ln=La, Ce, Pr, Nd, Sm) compounds. CeNiAsO undergoes two successive anti-ferromagnetic transitions at TN1=9.3 K and TN2=7.3 K; SmNiAsO becomes an anti-ferromagnet below TN≃3.5 K; NdNiAsO keeps paramagnetic down to 2 K but orders anti-ferromagnetically below TN≃1.3 K. Superconductivity was observed only in Kramers non-magnetic LaNiAsO and PrNiAsO with Tc=2.7 K and 0.93 K, respectively. The superconductivity of PrNiAsO is further studied by upper critical field and specific heat measurements, which reveal that PrNiAsO is a weakly coupled Kramers non-magnetic superconductor. Our work confirms that the nickel-based oxyarsenide superconductors are substantially different in mechanism to iron-based ones, and are likely to be described by the conventional superconductivity theory.

  13. Component masses of young, wide, non-magnetic white dwarf binaries in the SDSS DR7

    CERN Document Server

    Baxter, R B; Parker, Q A; Casewell, S L; Lodieu, N; Burleigh, M R; Lawrie, K A; Kulebi, B; Koester, D; Holland, B R

    2014-01-01

    We present a spectroscopic component analysis of 18 candidate young, wide, non-magnetic, double-degenerate binaries identified from a search of the Sloan Digital Sky Survey Data Release 7 (DR7). All but two pairings are likely to be physical systems. We show SDSS J084952.47+471247.7 + SDSS J084952.87+471249.4 to be a wide DA+DB binary, only the second identified to date. Combining our measurements for the components of 16 new binaries with results for three similar, previously known systems within the DR7, we have constructed a mass distribution for the largest sample to date (38) of white dwarfs in young, wide, non-magnetic, double-degenerate pairings. This is broadly similar in form to that of the isolated field population with a substantial peak around M~0.6 Msun. We identify an excess of ultra-massive white dwarfs and attribute this to the primordial separation distribution of their progenitor systems peaking at relatively larger values and the greater expansion of their binary orbits during the final sta...

  14. Non-magnetic impurity effects in LiFeAs studied by STM/STS

    Science.gov (United States)

    Hanaguri, T.; Khim, Seung Hyun; Lee, Bumsung; Kim, Kee Hoon; Kitagawa, K.; Matsubayashi, K.; Mazaki, Y.; Uwatoko, Y.; Takigawa, M.; Takagi, H.

    2012-02-01

    Detecting the possible sign reversal of the superconducting gap in iron-based superconductors is highly non-trivial. Here we use non-magnetic impurity as a sign indicator. If the sign of the superconducting gap is positive everywhere in momentum space, in-gap bound state should not be observed near the impurity site unless it is magnetic. On the other hand, if there is a sign-reversal in the gap, even non-magnetic impurity may create in-gap bound state [1]. We performed STM/STS experiments on self-flux and Sn-flux grown LiFeAs crystals and examined the effects of Sn impurity. In STM images of Sn-flux grown samples, we found a ring-like object which may represent Sn. Tunneling spectrum taken at this defect site exhibits in-gap bound state. Together with flat-bottom superconducting gap observed far from the defects, sign-reversing s-wave gap is the most plausible gap structure in LiFeAs. [1] T. Kariyado and M. Ogata, JPSJ 79, 083704 (2010).

  15. Synthesis of Semiconductor Nanocrystals, Focusing on Nontoxic and Earth-Abundant Materials.

    Science.gov (United States)

    Reiss, Peter; Carrière, Marie; Lincheneau, Christophe; Vaure, Louis; Tamang, Sudarsan

    2016-09-28

    We review the synthesis of semiconductor nanocrystals/colloidal quantum dots in organic solvents with special emphasis on earth-abundant and toxic heavy metal free compounds. Following the Introduction, section 2 defines the terms related to the toxicity of nanocrystals and gives a comprehensive overview on toxicity studies concerning all types of quantum dots. Section 3 aims at providing the reader with the basic concepts of nanocrystal synthesis. It starts with the concepts currently used to describe the nucleation and growth of monodisperse particles and next takes a closer look at the chemistry of the inorganic core and its interactions with surface ligands. Section 4 reviews in more detail the synthesis of different families of semiconductor nanocrystals, namely elemental group IV compounds (carbon nanodots, Si, Ge), III-V compounds (e.g., InP, InAs), and binary and multinary metal chalcogenides. Finally, the authors' view on the perspectives in this field is given.

  16. Influence of light on the Einstein relation in III-V, ternary and quaternary materials: Simplified theory and a suggestion for experimental determination

    Energy Technology Data Exchange (ETDEWEB)

    Mukherjee, S. [Department of Electronic Science, University of Calcutta, 92, Achryya Prafulla Chandra Road, Kolkata 700 009 (India); De, D. [Department of Computer Science and Engineering, West Bengal University of Technology, B.F. 142, Sector 1, Salt Lake City, Kolkata 700 064 (India); Mukherjee, D.J. [Department of Electronics, Shyamaprasad College, 32, R. Dasgupta Road, Kolkata 700 024 (India); Bhattacharya, S. [Department of Computer Science, St. Xavier' s College, 30 Park Street, Kolkata 700 016 (India); Sinha, A. [Department of Physics, Kalyani University, Kalyani 741 235 (India); Ghatak, K.P. [Department of Electronic Science, University of Calcutta, 92, Achryya Prafulla Chandra Road, Kolkata 700 009 (India)]. E-mail: kamakhyaghatak@yahoo.co.in

    2007-04-30

    We study theoretically the energy spectrum of the conduction electrons and the Einstein relation for the diffusivity-mobility ratio (DMR) for III-V, ternary and quaternary materials, whose unperturbed energy band structures are defined by the three-band model of Kane, in the presence of light waves. The solution of the Boltzmann transport equation on the basis of this newly formulated electron dispersion law will introduce new physical ideas and experimental findings under different external conditions. It has been observed that the unperturbed isotropic energy spectrum in the presence of light changes into an anisotropic dispersion relation with the energy-dependent mass anisotropy. It has been found taking n-InAs, n-InSb, n-Hg{sub 1-} {sub x} Cd {sub x} Te and n-In{sub 1-} {sub x} Ga {sub x} As {sub y} P{sub 1-} {sub y} lattice matched to InP, as examples that the DMR increases with increasing electron concentration, decreasing with increasing intensity and wavelength in various manners. The rate of change is totally band structure dependent and is influenced by the presence of the different energy band constants. The well-known result for the DMR for degenerate wide gap materials in the absence of light waves has been obtained as a special case of the present analysis under certain limiting conditions and this compatibility is the indirect test of our generalized formalism. Besides, we have suggested an experimental method of determining the DMR in degenerate materials having arbitrary dispersion laws.

  17. Invariance of the magnetic behavior and AMI in ferromagnetic biphase films with distinct non-magnetic metallic spacers

    Energy Technology Data Exchange (ETDEWEB)

    Silva, E.F. [Departamento de Física, Universidade Federal do Rio Grande do Norte, 59078-900 Natal, RN (Brazil); Departamento de Física, Universidade Federal de Pernambuco, 50670-901 Recife, PE (Brazil); Gamino, M. [Departamento de Física, Universidade Federal de Pernambuco, 50670-901 Recife, PE (Brazil); Instituto de Física, Universidade Federal do Rio Grande de Sul, 91501-970 Porto Alegre, RS (Brazil); Andrade, A.M.H. de [Instituto de Física, Universidade Federal do Rio Grande de Sul, 91501-970 Porto Alegre, RS (Brazil); Vázquez, M. [Instituto de Ciencia de Materiales de Madrid, CSIC, 28049 Madrid (Spain); Correa, M.A. [Departamento de Física, Universidade Federal do Rio Grande do Norte, 59078-900 Natal, RN (Brazil); Bohn, F., E-mail: felipebohn@fisica.ufrn.br [Departamento de Física, Universidade Federal do Rio Grande do Norte, 59078-900 Natal, RN (Brazil)

    2017-02-01

    We investigate the quasi-static magnetic, magnetotransport, and dynamic magnetic properties in ferromagnetic biphase films with distinct non-magnetic metallic spacer layers. We observe that the nature of the non-magnetic metallic spacer material does not have significant influence on the overall biphase magnetic behavior, and, consequently, on the magnetotransport and dynamic magnetic responses. We focus on the magnetoimpedance effect and verify that the films present asymmetric magnetoimpedance effect. Moreover, we explore the possibility of tuning the linear region of the magnetoimpedance curves around zero magnetic field by varying the probe current frequency in order to achieve higher sensitivity values. The invariance of the magnetic behavior and the asymmetric magnetoimpedance effect in ferromagnetic biphase films with distinct non-magnetic metallic spacers place them as promising candidates for probe element and open possibilities to the development of lower-cost high sensitivity linear magnetic field sensor devices.

  18. Invariance of the magnetic behavior and AMI in ferromagnetic biphase films with distinct non-magnetic metallic spacers

    Science.gov (United States)

    Silva, E. F.; Gamino, M.; Andrade, A. M. H. de; Vázquez, M.; Correa, M. A.; Bohn, F.

    2017-02-01

    We investigate the quasi-static magnetic, magnetotransport, and dynamic magnetic properties in ferromagnetic biphase films with distinct non-magnetic metallic spacer layers. We observe that the nature of the non-magnetic metallic spacer material does not have significant influence on the overall biphase magnetic behavior, and, consequently, on the magnetotransport and dynamic magnetic responses. We focus on the magnetoimpedance effect and verify that the films present asymmetric magnetoimpedance effect. Moreover, we explore the possibility of tuning the linear region of the magnetoimpedance curves around zero magnetic field by varying the probe current frequency in order to achieve higher sensitivity values. The invariance of the magnetic behavior and the asymmetric magnetoimpedance effect in ferromagnetic biphase films with distinct non-magnetic metallic spacers place them as promising candidates for probe element and open possibilities to the development of lower-cost high sensitivity linear magnetic field sensor devices.

  19. Effective negative refractive index in ferromagnet-semiconductor superlattices.

    Science.gov (United States)

    Tarkanyan, Roland H; Niarchos, Dimitris G

    2006-06-12

    Problem of anomalous refraction of electromagnetic waves is analyzed in a superlattice which consists of alternating layers of ferromagnetic insulator and nonmagnetic semiconductor. Effective permittivity and permeability tensors are derived in the presence of an external magnetic field parallel to the plane of the layers. It is shown that in the case of the Voigt configuration, the structure behaves as a left-handed medium with respect to TE-type polarized wave, in the low-frequency region of propagation. The relative orientation of the Poynting vector and the refractive wave vector is examined in different frequency ranges. It is shown that the frequency region of existence for the backward mode can be changed using external magnetic field as tuning parameter.

  20. Correlation effects in the small gap semiconductor FeGa3

    OpenAIRE

    Bittar, EM; Capan, C.; Seyfarth, G.; Pagliuso, PG; Fisk, Z.

    2010-01-01

    We report investigations of the effect of electron doping in FeGa 3 via electric resistivity, specific heat and magnetic susceptibility measurements in single crystals. FeGa3 is a non-magnetic small gap semiconductor (Δ ∼ 0.3-0.4 eV). Low concentration of Co in FeGa 3 induces a crossover to a metallic-like behavior, also creating weakly coupled local moments. Electronic specific heat and resistivity suggest a mass enhancement of charge carriers. Thus, the low carrier density metal formed by d...

  1. Correlation effects in the small gap semiconductor FeGa{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Bittar, E M; Capan, C; Seyfarth, G; Fisk, Z [Department of Physics and Astronomy, University of California Irvine, CA 92697 (United States); Pagliuso, P G, E-mail: bittar@ifi.unicamp.b [Instituto de Fisica ' Gleb Wataghin' , UNICAMP, C. P. 6165, 13083-970, Campinas, SP (Brazil)

    2010-01-15

    We report investigations of the effect of electron doping in FeGa{sub 3} via electric resistivity, specific heat and magnetic susceptibility measurements in single crystals. FeGa{sub 3} is a non-magnetic small gap semiconductor ({Delta} {approx} 0.3-0.4 eV). Low concentration of Co in FeGa{sub 3} induces a crossover to a metallic-like behavior, also creating weakly coupled local moments. Electronic specific heat and resistivity suggest a mass enhancement of charge carriers. Thus, the low carrier density metal formed by doping FeGa{sub 3} presents some physical properties that resemble heavy fermion metals.

  2. Semiconductors data handbook

    CERN Document Server

    Madelung, Otfried

    2004-01-01

    This volume Semiconductors: Data Handbook contains frequently used data from the corresponding larger Landolt-Börnstein handbooks in a low price book for the individual scientist working in the laboratory. The Handbook contain important information about a large number of semiconductors

  3. Applications of Semiconductor Lasers

    Institute of Scientific and Technical Information of China (English)

    LI Te; SUN Yan-fang; NING Yong-qiang; WANG Li-jun

    2005-01-01

    An overview of the applications of semiconductor lasers is presented. Diode lasers are widely used today,and the most prevalent use of the laser is probably in CD and DVD drives for computers and audio/video media systems. Semiconductor lasers are also used in many other fields ranging from optical fiber communications to display,medicine and pumping sources.

  4. Semiconductor Research Experimental Techniques

    CERN Document Server

    Balkan, Naci

    2012-01-01

    The book describes the fundamentals, latest developments and use of key experimental techniques for semiconductor research. It explains the application potential of various analytical methods and discusses the opportunities to apply particular analytical techniques to study novel semiconductor compounds, such as dilute nitride alloys. The emphasis is on the technique rather than on the particular system studied.

  5. Semiconductor radiation detection systems

    CERN Document Server

    2010-01-01

    Covers research in semiconductor detector and integrated circuit design in the context of medical imaging using ionizing radiation. This book explores other applications of semiconductor radiation detection systems in security applications such as luggage scanning, dirty bomb detection and border control.

  6. Semiconductor/dielectric interface engineering and characterization

    Science.gov (United States)

    Lucero, Antonio T.

    The focus of this dissertation is the application and characterization of several, novel interface passivation techniques for III-V semiconductors, and the development of an in-situ electrical characterization. Two different interface passivation techniques were evaluated. The first is interface nitridation using a nitrogen radical plasma source. The nitrogen radical plasma generator is a unique system which is capable of producing a large flux of N-radicals free of energetic ions. This was applied to Si and the surface was studied using x-ray photoelectron spectroscopy (XPS). Ultra-thin nitride layers could be formed from 200-400° C. Metal-oxide-semiconductor capacitors (MOSCAPs) were fabricated using this passivation technique. Interface nitridation was able to reduce leakage current and improve the equivalent oxide thickness of the devices. The second passivation technique studied is the atomic layer deposition (ALD) diethylzinc (DEZ)/water treatment of sulfur treated InGaAs and GaSb. On InGaAs this passivation technique is able to chemically reduce higher oxidation states on the surface, and the process results in the deposition of a ZnS/ZnO interface passivation layer, as determined by XPS. Capacitance-voltage (C-V) measurements of MOSCAPs made on p-InGaAs reveal a large reduction in accumulation dispersion and a reduction in the density of interfacial traps. The same technique was applied to GaSb and the process was studied in an in-situ half-cycle XPS experiment. DEZ/H2O is able to remove all Sb-S from the surface, forming a stable ZnS passivation layer. This passivation layer is resistant to further reoxidation during dielectric deposition. The final part of this dissertation is the design and construction of an ultra-high vacuum cluster tool for in-situ electrical characterization. The system consists of three deposition chambers coupled to an electrical probe station. With this setup, devices can be processed and subsequently electrically characterized

  7. Compound Semiconductor Radiation Detectors

    CERN Document Server

    Owens, Alan

    2012-01-01

    Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement. Serious Competitors to Germanium and Silicon Radiation Detectors Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolutio...

  8. On the nature of ferromagnetism in dilute magnetic semiconductors: GaAs:Mn and GaP:Mn

    Energy Technology Data Exchange (ETDEWEB)

    Ivanov, V.A. E-mail: ivanov@uia.ua.ac.be; Krstajic, P.M.; Peeters, F.M.; Fleurov, V.; Kikoin, K

    2003-03-01

    On the basis of a simplified Hamiltonian for transition metal impurities in diluted magnetic semiconductors (DMS), the nature of ferromagnetism in p-type III-V DMS are investigated. Ferromagnetism is governed by the Anderson-Hubbard parameter for 3d electrons of Mn{sup 2+} and their strong hybridization with the hole carriers in the semiconducting medium. The origin of ferromagnetism in these materials has similarity with the Zener mechanism. From the energetically preferable parallel orientation of Mn spins the Curie temperature is calculated for GaAs:Mn.

  9. Magnetic reversal in iron thin films interspersed with non-magnetic pinning sites

    Energy Technology Data Exchange (ETDEWEB)

    Nau, Stefan; Wiedwald, Ulf; Wiedemann, Stefan; Plettl, Alfred; Ziemann, Paul [Institut fuer Festkoerperphysik, Universitaet Ulm (Germany)

    2010-07-01

    Magnetic switching of continuous iron thin films is tailored by structuring a periodic array of nonmagnetic holes acting as pinning centers for domain walls. Contrary to common lithographically prepared antidots, nanostructures are prepared by deposition of densely packed monolayers of polystyrene (PS) spheres on silicon and silicon nitride substrates. Isotropic plasma etching leads to adjustable PS diameters between 20% and 80% of the initial value while conserving the particle spacing. The influence on the magnetic reversal process is studied as a function of diameter and distance of the PS spheres. Iron films are deposited by pulsed laser deposition. Antidot arrays of 100 nm period lead to up to 15 times increased in-plane coercive fields at 300 K, depending on dot diameters and film thicknesses. The magnetic reversal is imaged by scanning transmission x-ray microscopy accompanied by micromagnetic simulations in order to understand domain nucleation and propagation in varying external fields.

  10. Increasing energy relaxation time of superconducting qubits with nonmagnetic infrared filter and shield

    Science.gov (United States)

    Yuhao, Liu; Mengmeng, Li; Dong, Lan; Guangming, Xue; Xinsheng, Tan; Haifeng, Yu; Yang, Yu

    2016-05-01

    One of the primary origins of the energy relaxation in superconducting qubits is the quasiparticle loss. The quasiparticles can be excited remarkably by infrared radiation. In order to minimize the density of quasiparticle and increase the qubit relaxation time, we design and fabricate the infrared filter and shield for superconducting qubits. In comparison with previous filters and shields, a nonmagnetic dielectric is used as the infrared absorbing material, greatly suppressing the background magnetic fluctuations. The filters can be made to impedance-match with other microwave devices. Using the as-fabricated infrared filter and shield, we increased the relaxation time of a transmon qubit from 519 ns to 1125 ns. Project supported by the National Natural Science Foundation of China (Grant Nos. 91321310, 11274156, 11474152, 11474153, 61521001, and 11504165) and the State Key Program for Basic Research of China (Grant Nos. 2011CB922104 and 2011CBA00205).

  11. Theoretical study of optical conductivity of graphene with magnetic and nonmagnetic adatoms

    Science.gov (United States)

    Majidi, Muhammad Aziz; Siregar, Syahril; Rusydi, Andrivo

    2014-11-01

    We present a theoretical study of the optical conductivity of graphene with magnetic and nonmagnetic adatoms. First, by introducing an alternating potential in a pure graphene, we demonstrate a gap formation in the density of states and the corresponding optical conductivity. We highlight the distinction between such a gap formation and the so-called Pauli blocking effect. Next, we apply this idea to graphene with adatoms by introducing magnetic interactions between the carrier spins and the spins of the adatoms. Exploring various possible ground-state spin configurations of the adatoms, we find that the antiferromagnetic configuration yields the lowest total electronic energy and is the only configuration that forms a gap. Furthermore, we analyze four different circumstances leading to similar gaplike structures and propose a means to interpret the magneticity and the possible orderings of the adatoms on graphene solely from the optical conductivity data. We apply this analysis to the recently reported experimental data of oxygenated graphene.

  12. Spin-Selective Electron Quantum Transport in Nonmagnetic MgZnO/ZnO Heterostructures.

    Science.gov (United States)

    Maryenko, D; Falson, J; Bahramy, M S; Dmitriev, I A; Kozuka, Y; Tsukazaki, A; Kawasaki, M

    2015-11-06

    We report magnetotransport measurements on a high-mobility two-dimensional electron system at the nonmagnetic MgZnO/ZnO heterointerface showing distinct behavior for electrons with spin-up and spin-down orientations. The low-field Shubnikov-de Haas oscillations manifest alternating resistance peak heights which can be attributed to distinct scattering rates for different spin orientations. The tilt-field measurements at a half-integer filling factor reveal that the majority spins show usual diffusive behavior, i.e., peaks with the magnitude proportional to the index of the Landau level at the Fermi energy. By contrast, the minority spins develop "plateaus" with the magnitude of dissipative resistivity that is fairly independent of the Landau level index and is of the order of the zero-field resistivity.

  13. Spin-orbit-induced longitudinal spin-polarized currents in nonmagnetic solids

    Science.gov (United States)

    Wimmer, S.; Seemann, M.; Chadova, K.; Ködderitzsch, D.; Ebert, H.

    2015-07-01

    For certain nonmagnetic solids with low symmetry the occurrence of spin-polarized longitudinal currents is predicted. These arise due to an interplay of spin-orbit interaction and the particular crystal symmetry. This result is derived using a group-theoretical scheme that allows investigating the symmetry properties of any linear response tensor relevant to the field of spintronics. For the spin conductivity tensor it is shown that only the magnetic Laue group has to be considered in this context. Within the introduced general scheme also the spin Hall and additional related transverse effects emerge without making reference to the two-current model. Numerical studies confirm these findings and demonstrate for (Au1-xPtx)4Sc that the longitudinal spin conductivity may be on the same order of magnitude as the conventional transverse one. The presented formalism only relies on the magnetic space group and therefore is universally applicable to any type of magnetic order.

  14. Affine nonmagnetic transformation optics and its application to a practical bending adapter design

    CERN Document Server

    Xu, Hongyi; Yu, Tianyuan; Barbastathis, George; Sun, Handong

    2011-01-01

    One of the bottlenecks that limit the transition of transformation-optics devices from concepts to practical use is the nonunit magnetic permeability generally required from a mathematical transformation. Simple renormalization of permeability, as used in many previous designs and experiments, introduces impedance mismatch and thus degrades the functional photonic performance. Here we propose an area-preserving affine coordinate transformation as a general method to solve this problem. Ideal transformation-optics functions can be preserved while nonmagnetism is achieved. As a specific example, we illustrate how to apply this affine method into the design of a two-dimensional electromagnetic beam bending adapter. Concerns related to fabrication, such as anisotropy degree and bending angles, are fully discussed. Our study is a significant step toward practical use of ideal transformation optics devices that can be implemented directly with existing dielectric materials.

  15. Ferromagnetic/Nonmagnetic Nanostructures for the Electrical Measurement of the Spin Hall Effect.

    Science.gov (United States)

    Pham, Van Tuong; Vila, Laurent; Zahnd, Gilles; Marty, Alain; Savero-Torres, Williams; Jamet, Matthieu; Attané, Jean-Philippe

    2016-11-09

    Spin-orbitronics is based on the ability of spin-orbit interactions to achieve the conversion between charge currents and pure spin currents. As the precise evaluation of the conversion efficiency becomes a crucial issue, the need for straightforward ways to observe this conversion has emerged as one of the main challenges in spintronics. Here, we propose a simple device, akin to the ferromagnetic/nonmagnetic bilayers used in most spin-orbit torques experiments, and consisting of a spin Hall effect wire connected to two transverse ferromagnetic electrodes. We show that this system allows probing electrically the direct and inverse conversion in a spin Hall effect system and measuring both the spin Hall angle and the spin diffusion length. By applying this method to several spin Hall effect materials (Pt, Pd, Au, Ta, W), we show that it represents a promising tool for the metrology of spin-orbit materials.

  16. Pseudo-hcp nonmagnetic intermediate layer for granular media with high perpendicular magnetic anisotropy

    Energy Technology Data Exchange (ETDEWEB)

    Hashimoto, Atsushi [Department of Electronic Engineering, Tohoku University, 6-6-05 Aoba, Aramaki, Aoba-ku, Sendai 980-8579 (Japan); Saito, Shin [Department of Electronic Engineering, Tohoku University, 6-6-05 Aoba, Aramaki, Aoba-ku, Sendai 980-8579 (Japan); Itagaki, Norikazu [Department of Electronic Engineering, Tohoku University, 6-6-05 Aoba, Aramaki, Aoba-ku, Sendai 980-8579 (Japan); Takahashi, Migaku [New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai 980-8579 (Japan)

    2008-01-07

    Materials with the hexagonal close-packed structure (hcp) and the face-centred-cubic structure with stacking faults (pseudo-hcp) are examined for the nonmagnetic intermediate layer (NMIL) in order to suppress variant growth of magnetic grains for granular-type perpendicular recording media. Judging from the analysis of the epitaxial growth of Co-based magnetic grains, it has been found that a lattice misfit between NMIL and magnetic grain of less than 6% and a spreading coefficient of wettability of magnetic grain on NMIL of greater than 0.3 J m{sup -3} are required for the recording layer to have high perpendicular magnetic anisotropy energy. (fast track communication)

  17. III-nitride semiconductors and their modern devices

    CERN Document Server

    2013-01-01

    This book is dedicated to GaN and its alloys AlGaInN (III-V nitrides), semiconductors with intrinsic properties well suited for visible and UV light emission and electronic devices working at high temperature, high frequency, and harsh environments. There has been a rapid growth in the industrial activity relating to GaN, with GaN now ranking at the second position (after Si) among all semiconductors. This is mainly thanks to LEDs, but also to the emergence of lasers and high power and high frequency electronics. GaN-related research activities are also diversifying, ranging from advanced optical sources and single electron devices to physical, chemical, and biological sensors, optical detectors, and energy converters. All recent developments of nitrides and of their technology are gathered here in a single volume, with chapters written by world leaders in the field. This third book of the series edited by B. Gil is complementary to the preceding two, and is expected to offer a modern vision of nitrides and...

  18. Lattice-matched heteroepitaxy of wide gap ternary compound semiconductors

    Science.gov (United States)

    Bachmann, Klaus J.

    1992-01-01

    A variety of applications are identified for heteroepitaxial structures of wide gap I-III-VI2 and II-IV-V2 semiconductors, and are assessed in comparison with ternary III-V alloys and other wide gap materials. Non-linear optical applications of the I-III-VI2 and II-IV-V2 compound heterostructures are discussed, which require the growth of thick epitaxial layers imposing stringent requirements on the conditions of heteroepitaxy. In particular, recent results concerning the MOCVD growth of ZnSi(x)Ge(1-x)P2 alloys lattice-matching Si or GaP substrates are reviewed. Also, heterostructures of Cu(z)Ag(1-z)GaS2 alloys that lattice-match Si, Ge, GaP or GaAs substrates are considered in the context of optoelectronic devices operating in the blue wavelength regime. Since under the conditions of MOCVD, metastable alloys of the II-IV-V2 compounds and group IV elements are realized, II-IV-V2 alloys may also serve as interlayers in the integration of silicon and germanium with exactly lattice-matched tetrahedrally coordinated compound semiconductors, e.g. ZnSi(x)Ge(1-x)P2.

  19. Ways of providing radiation resistance of magnetic field semiconductor sensors

    CERN Document Server

    Bolshakova, I A; Holyaka, R; Matkovskii, A; Moroz, A

    2001-01-01

    Hall magnetic field sensors resistant to hard ionizing irradiation are being developed for operation under the radiation conditions of space and in charged particle accelerators. Radiation resistance of the sensors is first determined by the properties of semiconductor materials of sensitive elements; we have used microcrystals and thin layers of III-V semiconductors. Applying complex doping by rare-earth elements and isovalent impurities in certain proportions, we have obtained magnetic field sensors resistant to irradiation by fast neutrons and gamma-quanta. Tests of their radiation resistance were carried out at IBR-2 at the Joint Institute for Nuclear Research (Dubna). When exposed to neutrons with E=0.1-13 MeV and intensity of 10 sup 1 sup 0 n cm sup - sup 2 s sup - sup 1 , the main parameter of the sensors - their sensitivity to magnetic fields - changes by no more than 0.1% up to fluences of 10 sup 1 sup 4 n cm sup - sup 2. Further improvement of radiation resistance of sensor materials is expected by ...

  20. Non-magnetic photospheric bright points in 3D simulations of the solar atmosphere

    Science.gov (United States)

    Calvo, F.; Steiner, O.; Freytag, B.

    2016-11-01

    Context. Small-scale bright features in the photosphere of the Sun, such as faculae or G-band bright points, appear in connection with small-scale magnetic flux concentrations. Aims: Here we report on a new class of photospheric bright points that are free of magnetic fields. So far, these are visible in numerical simulations only. We explore conditions required for their observational detection. Methods: Numerical radiation (magneto-)hydrodynamic simulations of the near-surface layers of the Sun were carried out. The magnetic field-free simulations show tiny bright points, reminiscent of magnetic bright points, only smaller. A simple toy model for these non-magnetic bright points (nMBPs) was established that serves as a base for the development of an algorithm for their automatic detection. Basic physical properties of 357 detected nMBPs were extracted and statistically evaluated. We produced synthetic intensity maps that mimic observations with various solar telescopes to obtain hints on their detectability. Results: The nMBPs of the simulations show a mean bolometric intensity contrast with respect to their intergranular surroundings of approximately 20%, a size of 60-80 km, and the isosurface of optical depth unity is at their location depressed by 80-100 km. They are caused by swirling downdrafts that provide, by means of the centripetal force, the necessary pressure gradient for the formation of a funnel of reduced mass density that reaches from the subsurface layers into the photosphere. Similar, frequently occurring funnels that do not reach into the photosphere, do not produce bright points. Conclusions: Non-magnetic bright points are the observable manifestation of vertically extending vortices (vortex tubes) in the photosphere. The resolving power of 4-m-class telescopes, such as the DKIST, is needed for an unambiguous detection of them. The movie associated to Fig. 1 is available at http://www.aanda.org

  1. Near-field optical second-harmonic technique for detection and characterization of semiconductor thin film electron-scattering domain boundaries

    Science.gov (United States)

    Shafiei, Farbod; Orzali, Tommaso; Bersuker, Gennadi; Michael, Downer

    2015-03-01

    Understanding electron transport in epitaxial semiconductor thin films and low dimension systems is crucial for new electro-optic devices. III-V films grown on Si integrate high carrier mobility into the established Si platform, but are susceptible to formation of sub-micron anti-phase domains that possess unwanted Ga-Ga or As-As electron-scattering defects at their boundaries. Optical second-harmonic generation provides sensitive, specific and noninvasive but so far only spatially-integrated characterization for these defects. We introduce a fiber based nearfield scanning optical second harmonic microscopy for the first time to fully resolve the electron scattering boundaries on III-V/Si films. This technique reveal variations in electron scattering boundaries structure as growth conditions, epitaxial film composition, and substrate vary, and are compared with surface topography, darkfield transmission electron microscopy and electron back scatter diffraction. Suppression of the electron-scattering boundaries has been explored.

  2. Coherent dynamics in semiconductors

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher

    1998-01-01

    Ultrafast nonlinear optical spectroscopy is used to study the coherent dynamics of optically excited electron-hole pairs in semiconductors. Coulomb interaction implies that the optical inter-band transitions are dominated, at least at low temperatures, by excitonic effects. They are further...... and molecular systems are found and studied in the exciton-biexciton system of semiconductors. At densities where strong exciton interactions, or many-body effects, become dominant, the semiconductor Bloch equations present a more rigorous treatment of the phenomena Ultrafast degenerate four-wave mixing is used...

  3. Defects in semiconductors

    CERN Document Server

    Romano, Lucia; Jagadish, Chennupati

    2015-01-01

    This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoret

  4. Physics of semiconductor lasers

    CERN Document Server

    Mroziewicz, B; Nakwaski, W

    2013-01-01

    Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

  5. Semiconductors bonds and bands

    CERN Document Server

    Ferry, David K

    2013-01-01

    As we settle into this second decade of the twenty-first century, it is evident that the advances in micro-electronics have truly revolutionized our day-to-day lifestyle. The technology is built upon semiconductors, materials in which the band gap has been engineered for special values suitable to the particular application. This book, written specifically for a one semester course for graduate students, provides a thorough understanding of the key solid state physics of semiconductors. It describes how quantum mechanics gives semiconductors unique properties that enabled the micro-electronics revolution, and sustain the ever-growing importance of this revolution.

  6. Estudio de dispositivos semiconductores modernos mediante simulaciones numéricas: modelización de celdas solares de puntos cuánticos basadas en materiales III-V

    OpenAIRE

    Cédola, Ariel P.

    2016-01-01

    En los últimos años, la celda solar de puntos cuánticos ha atraído la atención de la comunidad científica como una de las más prometedoras implementaciones del concepto de celda solar de banda intermedia, que de acuerdo a predicciones teóricas basadas en el principio del balance detallado, podría alcanzar una eficiencia superior al 63% bajo máxima concentración de luz solar. Capas de puntos cuánticos embebidas en la región intrínseca de una celda solar p-i-n introducen estados energéticos en ...

  7. Effect of nonmagnetic substituents Mg and Zn on the phase competition in the multiferroic antiferromagnet MnWO4

    OpenAIRE

    Meddar, Lynda; Josse, Michael; Deniard, Philippe; La, Carole; André, Gilles; Damay, Françoise; Petricek, Vaclav; Jobic, Stéphane; Whangbo, Myung-Hwan; Maglione, Mario; Payen, Christophe

    2010-01-01

    The effects of substituting nonmagnetic Mg2+ and Zn2+ ions for the Mn2+ (S = 5/2) ions on the structural, magnetic and dielectric properties of the multiferroic frustrated antiferromagnet MnWO4 were investigated. Polycrystalline samples of Mn1-xMgxWO4 and Mn1-xZnxWO4 (0

  8. Microstructure and mechanical properties of nonmagnetic Fe-25Mn-xCu-C steels by super solidus liquid phase sintering

    Science.gov (United States)

    Jia, Shanquan; Xiao, Zhiyu; Wang, Jun; Yang, Shuo; Guan, Hangjian; Zhu, Quanli

    2016-11-01

    In this work, nonmagnetic steels Fe-25Mn-xCu-C were prepared by high manganese pre-alloyed steel powders through powder metallurgy (PM) technique. Four types of steels specimen were created to investigate the microstructure evolving with sintering process, mechanical properties and magnetic properties. The microstructures, fracture surfaces, phase constitutions and mechanical properties of Fe-25Mn-xCu-C were characterized by scanning electron microscopy (SEM), x-ray diffraction (XRD), and tensile strength test. The results showed that super solidus liquid-phase sintering (SLPS) phenomenon was conclusively verified, for the first time, in the Fe-Mn pre-alloyed powders: Liquids generated by SLPS process from pre-alloyed powders could improve the binding condition between the particles and enhance the densification. X-ray diffraction (XRD) experiment and physical property measurement system (PPMS) measurement verified the nonmagnetic properties of steels with single austenite phase. It is confirmed that mechanical properties are intensively influenced by the characteristic and quantity of liquids between the matrix particles. The fracture mechanism of the steel is dominated by intergranular decohesion mode. The preliminary study found this kind of new non-magnetic steel exhibits relatively high density. With the efficiency in fabricating and the non-magnetic property, this work foresees good prospects for application in the steel components manufacturing industry.

  9. Fabrication of a Textured Non-Magnetic Ni-12at.%V Alloy Substrate for Coated Conductors

    DEFF Research Database (Denmark)

    Gao, M. M.; Grivel, Jean-Claude; Suo, H. L.;

    2011-01-01

    Ni-12at.%V alloy is a promising candidate for non-magnetic cube textured metallic substrates used for high temperature coated conductors. In this work, a textured Ni-12at.%V substrate has been fabricated by powder metallurgy route. After cold rolling and recrystallization annealing, a cube texture...

  10. Electronic and magnetic properties of a new 2D diluted magnetic semiconductor La1 - x Ba x Zn1 - x Mn x AsO from Ab initio calculations

    Science.gov (United States)

    Bannikov, V. V.; Ivanovskii, A. L.

    2013-12-01

    Very recently, on the example of hole- and spin-doped semiconductor LaZnAsO, quite an unexpected area of potential applications of quasi-two-dimensional 1111-like phases was proposed (C. Ding et al., Phys. Rev. B 88, 041102R (2013)) as a promising platform for searching for new diluted magnetic semiconductors (DMSs). In this work, by means of the ab initio calculations, we have examined in detail the electronic and magnetic properties of LaZnAsO alloyed with Ba and Mn. Our results demonstrate that Ba or Mn doping transforms the parent non-magnetic semiconductor LaZnAsO into a non-magnetic metal or a magnetic semiconductor, respectively. On the other hand, the joint effect of these dopants (i.e., co-doping Ba + Mn) leads to transition of La0.89Ba0.11Zn0.89Mn0.11AsO into the state of magnetic metal, which is formed by alternately stacked semiconducting non-magnetic blocks [La0.89Ba0.11O] and metallic-like magnetic blocks [Zn0.89Mn0.11As].

  11. Absorption enhancement of GaInP nanowires by tailoring transparent shell thicknesses and its application in III-V nanowire/Si film two-junction solar cells.

    Science.gov (United States)

    Li, Xinhua; Shi, Tongfei; Liu, Guangqiang; Wen, Long; Zhou, BuKang; Wang, Yuqi

    2015-09-21

    A non-absorbing transparent shell is proposed to be coated on the outer surface of the core photoactive GaInP nanowire array (NWA) of the III-V nanowire (NW)/Si film two-junction solar cell. Interestingly, the diluted (at the filling ratio of 0.25) GaInP NWA with core / transparent shell structure can absorb more light than that in bare denser (at the filling ratio of 0.5) NWA. This allows for less source material consumption during the fabrication of III-V NWA/Si film two-junction cell. Meanwhile, the condition of current matching between the top III-V NWA and Si film sub cell can be easily fulfilled by tailoring the coating thickness of the transparent coating. Beyond the advantages on light absorption, the surface passivation effects introduced by the addition of some transparent dielectric coatings can reduce the surface recombination rate at the top NWA sub cell surface. This facilitates the effective extraction of photo-generated carriers and enhances output stability of the top NWA sub cell. From electrical simulation, a power conversion efficiency of 29.9% can be obtained at the optimized coating geometry.

  12. Semiconductor Nanowires from Materials Science and Device Physics Perspectives

    Science.gov (United States)

    Samuelson, Lars

    2005-03-01

    Realization of extremely down-scaled devices gives tough challenges related to technology and materials science. One reason for the concern is that top-down fabricated nano-devices tend to have their properties dominated by process-induced damage, rendering ultra-small devices not so useful. Alternatively, bottom-up fabrication methods may allow dimensions on the scale even below 10 nm, still with superb device properties. I will in this talk describe our research on catalytically induced growth of semiconductor nanowires. Our method uses catalytic gold nanoparticles, allowing tight control of diameter as well as position of where the nanowire grows, with our work completely focused on epitaxially nucleated nanowires in which the nanowire structure can be seen as a coherent, monolithic extension of the crystalline substrate material. One of the most important achievements in this field of research is the realization of atomically abrupt heterostructures within nanowires, in which the material composition can be altered within only one or a few monolayers, thus allowing 1D heterostructure devices to be realized. This has allowed a variety of quantum devices to be realized, such as single-electron transistors, resonant tunneling devices as well as memory storage devices. A related recent field of progress has been the realization of ideally nucleated III-V nanowires on Si substrates, cases where we have also reported functioning III-V heterostructure device structures on Si. All of these device related challenges evolve from an improved understanding of the materials science involved in nucleation of nanowires, in altering of composition of the growing nanowire, in control of the growth direction etc. I will give examples of these materials science issues and will especially dwell on the opportunities to form new kinds of materials, e.g. as 3D complex nanowire structures, resembling nanotrees or nanoforests.

  13. Physics of semiconductor devices

    CERN Document Server

    Rudan, Massimo

    2015-01-01

    This book describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices.  Details are worked out carefully and derived from the basic physics, while keeping the internal coherence of the concepts and explaining various levels of approximation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS). The final chapters are devoted to the description of s...

  14. Biggest semiconductor installed

    CERN Multimedia

    2008-01-01

    Scientists and technicians at the European Laboratory for Particle Physics, commonly known by its French acronym CERN (Centre Europen pour la Recherche Nuclaire), have completed the installation of the largest semiconductor silicon detector.

  15. Defects in semiconductor nanostructures

    Indian Academy of Sciences (India)

    Vijay A Singh; Manoj K Harbola; Praveen Pathak

    2008-02-01

    Impurities play a pivotal role in semiconductors. One part in a million of phosphorous in silicon alters the conductivity of the latter by several orders of magnitude. Indeed, the information age is possible only because of the unique role of shallow impurities in semiconductors. Although work in semiconductor nanostructures (SN) has been in progress for the past two decades, the role of impurities in them has been only sketchily studied. We outline theoretical approaches to the electronic structure of shallow impurities in SN and discuss their limitations. We find that shallow levels undergo a SHADES (SHAllow-DEep-Shallow) transition as the SN size is decreased. This occurs because of the combined effect of quantum confinement and reduced dielectric constant in SN. Level splitting is pronounced and this can perhaps be probed by ESR and ENDOR techniques. Finally, we suggest that a perusal of literature on (semiconductor) cluster calculations carried out 30 years ago would be useful.

  16. Isotopically controlled semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Haller, E.E.

    2004-11-15

    A review of recent research involving isotopically controlled semiconductors is presented. Studies with isotopically enriched semiconductor structures experienced a dramatic expansion at the end of the Cold War when significant quantities of enriched isotopes of elements forming semiconductors became available for worldwide collaborations. Isotopes of an element differ in nuclear mass, may have different nuclear spins and undergo different nuclear reactions. Among the latter, the capture of thermal neutrons which can lead to neutron transmutation doping, can be considered the most important one for semiconductors. Experimental and theoretical research exploiting the differences in all the properties has been conducted and will be illustrated with selected examples. Manuel Cardona, the longtime editor-in-chief of Solid State Communications has been and continues to be one of the major contributors to this field of solid state physics and it is a great pleasure to dedicate this review to him.

  17. A semiconductor laser

    Energy Technology Data Exchange (ETDEWEB)

    Naoko, O.; Masaru, K.

    1984-04-20

    A semiconductor laser with enhanced characteristics is patented in which bleaching coatings are generated on the outcoupling mirrors by sputtering alternating coating layers made from A1203 and A10, with high and low indices of refraction.

  18. Electrochemical Characterization of Semiconductor Materials and Structures

    Science.gov (United States)

    1997-01-01

    For a period covering October 1, 1995 through August 12, 1996, the research group at CSU has conducted theoretical and experimental research on "Electrochemical Characterization of Semiconductor Materials and Structures. " The objective of this investigation was to demonstrate the applicability of electrochemical techniques for characterization of complex device structures based on InP and GaAs, Ge, InGaAs, InSb, InAs and InSb, including: (1) accurate EC-V net majority carrier concentration depth profiling, and (2) surface and bulk structural and electrical type defect densities. Our motivation for this R&D effort was as follows: "Advanced space solar cells and ThermoPhotoVoltaic (TPV) cells are fabricated using a large variety of III-V materials based on InP and GaAs for solar cells and low bandgap materials such as Ge, InGaAs, InAs and InSb for TPV applications. At the present time for complex device structures using these materials, however, there is no simple way to assess the quality of these structures prior to device fabrication. Therefore, process optimization is a very time consuming and a costly endeavor". Completion of this R&D effort would have had unquestionable benefits for space solar cell and TPV cells, since electrochemical characterization of the above cell structures, if properly designed can provide many useful structural and electrical material information virtually at any depth inside various layers and at the interfaces. This, could have been applied for step-by-step process optimization, which could have been used for fabrication of new generation high efficiency, low cost space PV and TPV cells.

  19. Radiation effects in semiconductors

    CERN Document Server

    2011-01-01

    There is a need to understand and combat potential radiation damage problems in semiconductor devices and circuits. Written by international experts, this book explains the effects of radiation on semiconductor devices, radiation detectors, and electronic devices and components. These contributors explore emerging applications, detector technologies, circuit design techniques, new materials, and innovative system approaches. The text focuses on how the technology is being used rather than the mathematical foundations behind it. It covers CMOS radiation-tolerant circuit implementations, CMOS pr

  20. SILICON CARBIDE FOR SEMICONDUCTORS

    Science.gov (United States)

    This state-of-the-art survey on silicon carbide for semiconductors includes a bibliography of the most important references published as of the end...of 1964. The various methods used for growing silicon carbide single crystals are reviewed, as well as their properties and devices fabricated from...them. The fact that the state of-the-art of silicon carbide semiconductors is not further advanced may be attributed to the difficulties of growing

  1. Prediction of two-dimensional diluted magnetic semiconductors: Doped monolayer MoS2 systems

    KAUST Repository

    Cheng, Yingchun

    2013-03-05

    Using first-principles calculations, we propose a two-dimensional diluted magnetic semiconductor: monolayer MoS2 doped by transition metals. Doping of transition metal atoms from the IIIB to VIB groups results in nonmagnetic states, since the number of valence electrons is smaller or equal to that of Mo. Doping of atoms from the VIIB to IIB groups becomes energetically less and less favorable. Magnetism is observed for Mn, Fe, Co, Zn, Cd, and Hg doping, while for the other dopants from these groups it is suppressed by Jahn-Teller distortions. Analysis of the binding energies and magnetic properties indicates that (Mo,X)S2 (X=Mn, Fe, Co, and Zn) are promising systems to explore two-dimensional diluted magnetic semiconductors.

  2. Surface and Interface Engineering of Organometallic and Two Dimensional Semiconductor

    Science.gov (United States)

    Park, Jun Hong

    For over half a century, inorganic Si and III-V materials have led the modern semiconductor industry, expanding to logic transistor and optoelectronic applications. However, these inorganic materials have faced two different fundamental limitations, flexibility for wearable applications and scaling limitation as logic transistors. As a result, the organic and two dimensional have been studied intentionally for various fields. In the present dissertation, three different studies will be presented with followed order; (1) the chemical response of organic semiconductor in NO2 exposure. (2) The surface and stability of WSe2 in ambient air. (3) Deposition of dielectric on two dimensional materials using organometallic seeding layer. The organic molecules rely on the van der Waals interaction during growth of thin films, contrast to covalent bond inorganic semiconductors. Therefore, the morphology and electronic property at surface of organic semiconductor in micro scale is more sensitive to change in gaseous conditions. In addition, metal phthalocyanine, which is one of organic semiconductor materials, change their electronic property as reaction with gaseous analytes, suggesting as potential chemical sensing platforms. In the present part, the growth behavior of metal phthalocyanine and surface response to gaseous condition will be elucidated using scanning tunneling microscopy (STM). In second part, the surface of layered transition metal dichalcogenides and their chemical response to exposure ambient air will be investigated, using STM. Layered transition metal dichalcogenides (TMDs) have attracted widespread attention in the scientific community for electronic device applications because improved electrostatic gate control and suppression of short channel leakage resulted from their atomic thin body. To fabricate the transistor based on TMDs, TMDs should be exposed to ambient conditions, while the effect of air exposure has not been understood fully. In this part

  3. Quantum transport in semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Kubis, Tillmann Christoph

    2009-11-15

    predictions of the numerically very demanding microscopic model. This allows us to study the spin polarization of propagating and confined carriers in two-dimensional semiconductor devices of complex geometries. We show that the spin polarization generated by the intrinsic spin-Hall effect cannot be significantly mediated by phonons into confined states. However, we demonstrate that the interferences of partially confined carriers can significantly enhance the local spin polarization to values of almost 100 %. We finally propose three and four terminal devices that act as efficient all-semiconductor non-magnetic spin polarizers. (orig.)

  4. Enhanced von Weizsäcker Wang-Govind-Carter kinetic energy density functional for semiconductors

    Science.gov (United States)

    Shin, Ilgyou; Carter, Emily A.

    2014-05-01

    We propose a new form of orbital-free (OF) kinetic energy density functional (KEDF) for semiconductors that is based on the Wang-Govind-Carter (WGC99) nonlocal KEDF. We enhance within the latter the semi-local von Weizsäcker KEDF term, which is exact for a single orbital. The enhancement factor we introduce is related to the extent to which the electron density is localized. The accuracy of the new KEDF is benchmarked against Kohn-Sham density functional theory (KSDFT) by comparing predicted energy differences between phases, equilibrium volumes, and bulk moduli for various semiconductors, along with metal-insulator phase transition pressures. We also compare point defect and (100) surface energies in silicon for a broad test of its applicability. This new KEDF accurately reproduces the exact non-interacting kinetic energy of KSDFT with only one additional adjustable parameter beyond the three parameters in the WGC99 KEDF; it exhibits good transferability between semiconducting to metallic silicon phases and between various III-V semiconductors without parameter adjustment. Overall, this KEDF is more accurate than previously proposed OF KEDFs (e.g., the Huang-Carter (HC) KEDF) for semiconductors, while the computational efficiency remains at the level of the WGC99 KEDF (several hundred times faster than the HC KEDF). This accurate, fast, and transferable new KEDF holds considerable promise for large-scale OFDFT simulations of metallic through semiconducting materials.

  5. Enhanced von Weizsäcker Wang-Govind-Carter kinetic energy density functional for semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Shin, Ilgyou [Department of Chemistry, Princeton University, Princeton, New Jersey 08544-1009 (United States); Carter, Emily A., E-mail: eac@princeton.edu [Department of Mechanical and Aerospace Engineering, Program in Applied and Computational Mathematics, and Andlinger Center for Energy and the Environment, Princeton University, Princeton, New Jersey 08544-5263 (United States)

    2014-05-14

    We propose a new form of orbital-free (OF) kinetic energy density functional (KEDF) for semiconductors that is based on the Wang-Govind-Carter (WGC99) nonlocal KEDF. We enhance within the latter the semi-local von Weizsäcker KEDF term, which is exact for a single orbital. The enhancement factor we introduce is related to the extent to which the electron density is localized. The accuracy of the new KEDF is benchmarked against Kohn-Sham density functional theory (KSDFT) by comparing predicted energy differences between phases, equilibrium volumes, and bulk moduli for various semiconductors, along with metal-insulator phase transition pressures. We also compare point defect and (100) surface energies in silicon for a broad test of its applicability. This new KEDF accurately reproduces the exact non-interacting kinetic energy of KSDFT with only one additional adjustable parameter beyond the three parameters in the WGC99 KEDF; it exhibits good transferability between semiconducting to metallic silicon phases and between various III-V semiconductors without parameter adjustment. Overall, this KEDF is more accurate than previously proposed OF KEDFs (e.g., the Huang-Carter (HC) KEDF) for semiconductors, while the computational efficiency remains at the level of the WGC99 KEDF (several hundred times faster than the HC KEDF). This accurate, fast, and transferable new KEDF holds considerable promise for large-scale OFDFT simulations of metallic through semiconducting materials.

  6. Coherent spin manipulation without magnetic fields in strained semiconductors.

    Science.gov (United States)

    Kato, Y; Myers, R C; Gossard, A C; Awschalom, D D

    2004-01-01

    A consequence of relativity is that in the presence of an electric field, the spin and momentum states of an electron can be coupled; this is known as spin-orbit coupling. Such an interaction opens a pathway to the manipulation of electron spins within non-magnetic semiconductors, in the absence of applied magnetic fields. This interaction has implications for spin-based quantum information processing and spintronics, forming the basis of various device proposals. For example, the concept of spin field-effect transistors is based on spin precession due to the spin-orbit coupling. Most studies, however, focus on non-spin-selective electrical measurements in quantum structures. Here we report the direct measurement of coherent electron spin precession in zero magnetic field as the electrons drift in response to an applied electric field. We use ultrafast optical techniques to spatiotemporally resolve spin dynamics in strained gallium arsenide and indium gallium arsenide epitaxial layers. Unexpectedly, we observe spin splitting in these simple structures arising from strain in the semiconductor films. The observed effect provides a flexible approach for enabling electrical control over electron spins using strain engineering. Moreover, we exploit this strain-induced field to electrically drive spin resonance with Rabi frequencies of up to approximately 30 MHz.

  7. Method of doping a semiconductor

    Science.gov (United States)

    Yang, Chiang Y.; Rapp, Robert A.

    1983-01-01

    A method for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient.

  8. Enhancing current-induced torques by abutting additional spin polarizer layer to nonmagnetic metal layer

    Science.gov (United States)

    Go, Gyungchoon; Lee, Kyung-Jin; Kim, Young Keun

    2017-04-01

    Recently, the switching of a perpendicularly magnetized ferromagnet (FM) by injecting an in-plane current into an attached non-magnet (NM) has become of emerging technological interest. This magnetization switching is attributed to the spin-orbit torque (SOT) originating from the strong spin-orbit coupling of the NM layer. However, the switching efficiency of the NM/FM structure itself may be insufficient for practical use, as for example, in spin transfer torque (STT)-based magnetic random access memory (MRAM) devices. Here we investigate spin torque in an NM/FM structure with an additional spin polarizer (SP) layer abutted to the NM layer. In addition to the SOT contribution, a spin-polarized current from the SP layer creates an extra spin chemical potential difference at the NM/FM interface and gives rise to a STT on the FM layer. We show that, using typical parameters including device width, thickness, spin diffusion length, and the spin Hall angle, the spin torque from the SP layer can be much larger than that from the spin Hall effect (SHE) of the NM.

  9. Spin filtering and switching action in a diamond network with magnetic-nonmagnetic atomic distribution

    Science.gov (United States)

    Pal, Biplab; Dutta, Paramita

    2016-09-01

    We propose a simple model quantum network consisting of diamond-shaped plaquettes with deterministic distribution of magnetic and non-magnetic atoms in presence of a uniform external magnetic flux in each plaquette and predict that such a simple model can be a prospective candidate for spin filter as well as flux driven spintronic switch. The orientations and the amplitudes of the substrate magnetic moments play a crucial role in the energy band engineering of the two spin channels which essentially gives us a control over the spin transmission leading to a spin filtering effect. The externally tunable magnetic flux plays an important role in inducing a switch on-switch off effect for both the spin states indicating the behavior like a spintronic switch. Even a correlated disorder configuration in the on-site potentials and in the magnetic moments may lead to disorder-induced spin filtering phenomenon where one of the spin channel gets entirely blocked leaving the other one transmitting over the entire allowed energy regime. All these features are established by evaluating the density of states and the two terminal transmission probabilities using the transfer-matrix formalism within a tight-binding framework. Experimental realization of our theoretical study may be helpful in designing new spintronic devices.

  10. Chelating capture and magnetic removal of non-magnetic heavy metal substances from soil

    Science.gov (United States)

    Fan, Liren; Song, Jiqing; Bai, Wenbo; Wang, Shengping; Zeng, Ming; Li, Xiaoming; Zhou, Yang; Li, Haifeng; Lu, Haiwei

    2016-02-01

    A soil remediation method based on magnetic beneficiation is reported. A new magnetic solid chelator powder, FS@IDA (core-shell Fe3O4@SiO2 nanoparticles coated with iminodiacetic acid chelators), was used as a reactive magnetic carrier to selectively capture non-magnetic heavy metals in soil by chelation and removal by magnetic separation. FS@IDA was prepared via inorganic-organic and organic synthesis reactions that generated chelating groups on the surface of magnetic, multi-core, core-shell Fe3O4@SiO2 (FS) nanoparticles. These reactions used a silane coupling agent and sodium chloroacetate. The results show that FS@IDA could chelate the heavy metal component of Cd, Zn, Pb, Cu and Ni carbonates, lead sulfate and lead chloride in water-insoluble salt systems. The resulting FS@IDA-Cd and FS@IDA-Pb chelates could be magnetically separated, resulting in removal rates of approximately 84.9% and 72.2% for Cd and Pb, respectively. FS@IDA could not remove the residual heavy metals and those bound to organic matter in the soil. FS@IDA did not significantly alter the chemical composition of the soil, and it allowed for fast chelating capture, simple magnetic separation and facilitated heavy metal elution. FS@IDA could also be easily prepared and reprocessed.

  11. Induced magnetization spiral in a nonmagnetic metal sandwiched between two ferromagnets

    Energy Technology Data Exchange (ETDEWEB)

    Mathon, J.; Umerski, A.; Villeret, Murielle E-mail: m.a.villeret@city.ac.uk; Muniz, R.B.; Edwards, D.M

    2000-07-01

    Calculation of the magnetic moment induced in a non-magnetic metal, sandwiched between two ferromagnets with magnetizations at an arbitrary angle, is reported. It is found that the induced magnetization rotates along a complex three-dimensional spiral and can undergo many complete 360 deg. rotations. A simple free-electron model is used to derive an analytic formula for the twist angle phi inside the spacer. This demonstrates that, contrary to the behavior of magnetization inside a domain wall in a ferromagnet, phi varies non-uniformly inside the spacer and exhibits plateaus of almost constant rotation separated by regions of sharp rotations by large angles. The calculation is extended to the case of a realistic Co/Cu/Co(0 0 1) trilayer described by s, p, d tight-binding bands fitted to an ab initio band structure. An analytic formula for the components of the induced moment (and hence, for phi) is derived using the stationary phase approximation. Its validity is tested against a fully numerical calculation using the same band structure. The formula shows that the components of the induced magnetization each oscillate with a predominant short period determined by the Cu Fermi surface neck extrema. The twist angle again displays the same remarkable behavior as in the free-electron model and depends in an intricate manner on geometrical properties of the spacer Fermi surface as well as on the degree of confinement of carriers in the spacer quantum well.

  12. Room temperature ferromagnetism in liquid-phase pulsed laser ablation synthesized nanoparticles of nonmagnetic oxides

    Energy Technology Data Exchange (ETDEWEB)

    Singh, S. C., E-mail: subhash.laserlab@gmail.com; Gopal, R. [Laser Spectroscopy and Nanomaterials Lab, Department of Physics, University of Allahabad, Allahabad-211002 (India); Kotnala, R. K. [Magnetic Standardization Division, National Physical Laboratory, K.S. Krishnan Road, New Delhi (India)

    2015-08-14

    Intrinsic Room Temperature Ferromagnetism (RTF) has been observed in undoped/uncapped zinc oxide and titanium dioxide spherical nanoparticles (NPs) obtained by a purely green approach of liquid phase pulsed laser ablation of corresponding metal targets in pure water. Saturation magnetization values observed for zinc oxide (average size, 9 ± 1.2 nm) and titanium dioxide (average size, 4.4 ± 0.3 nm) NPs are 62.37 and 42.17 memu/g, respectively, which are several orders of magnitude larger than those of previous reports. In contrast to the previous works, no postprocessing treatments or surface modification is required to induce ferromagnetism in the case of present communication. The most important result, related to the field of intrinsic ferromagnetism in nonmagnetic materials, is the observation of size dependent ferromagnetism. Degree of ferromagnetism in titanium dioxide increases with the increase in particle size, while it is reverse for zinc oxide. Surface and volume defects play significant roles for the origin of RTF in zinc oxide and titanium dioxide NPs, respectively. Single ionized oxygen and neutral zinc vacancies in zinc oxide and oxygen and neutral/ionized titanium vacancies in titanium dioxide are considered as predominant defect centres responsible for observed ferromagnetism. It is expected that origin of ferromagnetism is a consequence of exchange interactions between localized electron spin moments resulting from point defects.

  13. Induced magnetization spiral in a nonmagnetic metal sandwiched between two ferromagnets

    CERN Document Server

    Mathon, J; Villeret, M; Muniz, R B; Edwards, D M

    2000-01-01

    Calculation of the magnetic moment induced in a non-magnetic metal, sandwiched between two ferromagnets with magnetizations at an arbitrary angle, is reported. It is found that the induced magnetization rotates along a complex three-dimensional spiral and can undergo many complete 360 deg. rotations. A simple free-electron model is used to derive an analytic formula for the twist angle phi inside the spacer. This demonstrates that, contrary to the behavior of magnetization inside a domain wall in a ferromagnet, phi varies non-uniformly inside the spacer and exhibits plateaus of almost constant rotation separated by regions of sharp rotations by large angles. The calculation is extended to the case of a realistic Co/Cu/Co(0 0 1) trilayer described by s, p, d tight-binding bands fitted to an ab initio band structure. An analytic formula for the components of the induced moment (and hence, for phi) is derived using the stationary phase approximation. Its validity is tested against a fully numerical calculation u...

  14. Magnetic and nonmagnetic doping dependence of the conducting surface states in Sm B6

    Science.gov (United States)

    Kang, B. Y.; Min, Chul-Hee; Lee, S. S.; Song, M. S.; Cho, K. K.; Cho, B. K.

    2016-10-01

    Kondo insulator Sm B6 has attracted attention because it can realize new topological phenomena driven by the interplay between strong correlation effect and topology. However, its topological nature is still under debate. To examine the topological aspect, we demonstrate the nonmagnetic La and magnetic Ce doping dependence of the resistance of Sm B6 . Moreover, the resistance ratios of different thicknesses are analyzed to confirm the surface contribution. Lightly doped La samples show a purely conducting surface region at low temperature, whereas the lightly doped Ce samples do not have any conducting region at low temperature. Furthermore, based on the analysis of the electrical transport data of S m1 -xL axB6 (0.0 ≤x ≤1.0 ), an electronic phase diagram was found, composed of four regions: region I (0.0 ≤x ≤0.06 ), II (0.1 ≤x ≤0.15 ), III (x ≈0.2 ) , and IV (0.25 ≤x ≤1.0 ). Region I is characterized by the presence of conducting surface states, region II is characterized by the insulating phase due to the d -f hybridization gap without the conducting surface state, region III is characterized by the disappearance of the d -f hybridization gap and the existence of valence fluctuation, and region IV is a typical metallic state.

  15. Controlling magnetism on metal surfaces with non-magnetic means: electric fields and surface charging.

    Science.gov (United States)

    Brovko, Oleg O; Ruiz-Díaz, Pedro; Dasa, Tamene R; Stepanyuk, Valeri S

    2014-03-01

    We review the state of the art of surface magnetic property control with non-magnetic means, concentrating on metallic surfaces and techniques such as charge-doping or external electric field (EEF) application. Magneto-electric coupling via EEF-based charge manipulation is discussed as a way to tailor single adatom spins, exchange interaction between adsorbates or anisotropies of layered systems. The mechanisms of paramagnetic and spin-dependent electric field screening and the effect thereof on surface magnetism are discussed in the framework of theoretical and experimental studies. The possibility to enhance the effect of EEF by immersing the target system into an electrolyte or ionic liquid is discussed by the example of substitutional impurities and metallic alloy multilayers. A similar physics is pointed out for the case of charge traps, metallic systems decoupled from a bulk electron bath. In that case the charging provides the charge carrier density changes necessary to affect the magnetic moments and anisotropies in the system. Finally, the option of using quasi-free electrons rather than localized atomic spins for surface magnetism control is discussed with the example of Shockley-type metallic surface states confined to magnetic nanoislands.

  16. Physics of Nonmagnetic Relativistic Thermal Plasmas. Ph.D. Thesis - Calif. Univ., San Diego

    Science.gov (United States)

    Dermer, C. D.

    1984-01-01

    A detailed treatment of the kinematics of relativistic systems of particles and photons is presented. In the case of a relativistic Maxwell-Boltzmann distribution of particles, the reaction rate and luminosity are written as single integrals over the invariant cross section, and the production spectrum is written as a double integral over the cross section differential in the energy of the produced particles (or photons) in the center-of-momentum system of two colliding particles. The results are applied to the calculation of the annihilation spectrum of a thermal electron-positron plasma, confirming previous numerical and analytic results. Relativistic thermal electron-ion and electron-electron bremsstrahlung are calculated exactly to lowest order, and relativistic thermal electron-positron bremsstrahlung is calculated in an approximate fashion. An approximate treatment of relativistic Comptonization is developed. The question of thermalization of a relativistic plasma is considered. A formula for the energy loss or exchange rate from the interaction of two relativistic Maxwell-Boltzmann plasmas at different temperatures is derived. Application to a stable, uniform, nonmagnetic relativistic thermal plasma is made. Comparison is made with other studies.

  17. Degradation of topological surface state by nonmagnetic S doping in SrxBi2Se3

    Science.gov (United States)

    Huang, Hui; Gu, Juanjuan; Tan, Min; Wang, Qinglong; Ji, Ping; Hu, Xueyou

    2017-01-01

    Research on possible topological superconductivity has grown rapidly over the past several years, from fundamental studies to the development of next generation technologies. Recently, it has been reported that the SrxBi2Se3 exhibits superconductivity with topological surface state, making this compound a promising candidate for investigating possible topological superconductivity. However, whether or not the topological surface state is robust against impurities is not clear in this system. Here we report a detailed investigation on the lattice structure, electronic and magnetic properties, as well as the topological superconducting properties of SrxBi2Se3−ySy samples. It is found that the superconducting transition temperature keeps nearly unchanged in all samples, despite of a gradual decrease of the superconducting shielding volume fraction with increasing S doping content. Meanwhile, the Shubnikov-de Hass oscillation results of the SrxBi2Se3−ySy samples reveal that the topological surface states are destroyed in S doped samples, suggesting the topological character is degraded by nonmagnetic dopants. PMID:28358021

  18. SQUID magnetometer using sensitivity correction signal for non-magnetic metal contaminants detection

    Science.gov (United States)

    Yagi, Toshifumi; Ohashi, Masaharu; Sakuta, Ken

    2016-11-01

    Measurement methods with SQUID can accurately detect small magnetic metal contaminants based on their magnetic remanence. But, a high-frequency excitation is necessary to detect nonmagnetic metals, on the base of contrasts in electric conductivity. In this work, an open loop technique is introduced to facilitate this. The SQUID is negative feedback controlled (flux locked loop (FLL) operation) for the low frequency range, which includes significant noise due to the movement of the magnetic body or the change of the ambient magnetic field composed of the geomagnetic field and technical signals, and it operates in an open loop configuration for the high frequency range. When using the open loop technique, negative feedback is not applied to the high frequency range. Consequently, the V-Φ characteristic changes due to various causes, which leads to variations in the conversion factor between the SQUID output voltage and the magnetic field. In this study, conversion techniques for the magnetic field for open loop operation of SQUID in the high frequency range are examined.

  19. Direct X-Ray Imaging of Transient Spin Accumulation near a Ferromagnet/Nonmagnet Interface

    Science.gov (United States)

    Chen, Zhao; Kukreja, Roopali; Bonetti, Stefano; Backes, Dirk; Kent, Andrew; Katine, Jordan; Durr, Hermann; Ohldag, Hendrik; Stohr, Joachim

    2015-03-01

    The physics of spin transport across a ferromagnet/nonmagnet interface is not well understood, even though such interfaces are common in spintronic devices. We use time-resolved x-ray spectro-microscopy to directly image transient spin accumulation in a Cu film caused by an injected spin current from an adjacent Co film. The measurement uses element-specific, circularly polarized x-rays detected via a scanning transmission x-ray microscope (STXM) in conjunction with 1.28MHz temporal modulation for remarkably increased x-ray sensitivity to spin signals. The transient moments per atom within the spin diffusion length from the interface were measured to be 8 x 10-5μB per Cu atom and 1.5 x 10-4μB per Co atom. The transient spin signal in Cu is found to be confined to states at the Fermi level, as expected, but we also observe a second peak of the same spin polarization in the spin accumulation signal that is 0.7eV higher than Fermi. The transient moments in the 28nm thick Cu layer exhibit the same spin sign as both the hybridization-induced static spins in Cu at the Cu/Co interface and the spins in the Co film. In contrast, the transient moments in the Co layer have the opposite sign, consistent with magnetization depleting from the Co polarizing layer.

  20. Beyond amorphous organic semiconductors

    Science.gov (United States)

    Hanna, Jun-ichi

    2003-07-01

    Recently it has been discovered that some types of liquid crystals, which believed to be governed by ionic conduction, exhibit a very fast electronic conduction. Their charge carrier transport is characterized by high mobility over 10-2 cm2/Vs independent of electric field and temperature. Now, the liquid crystals are being recognized as a new class of organic semiconductors. In this article, a new aspect of liquid crystals as a self-organizing molecular semiconductor are reviewed, focused on their basic charge carrier transport properties and discussed in comparison with those of molecular crystals and amorphous materials. And it is concluded that the liquid crystal is promising as a quality organic semiconductor for the devices that require a high mobility.