Understanding AlN Obtaining Through Computational Thermodynamics Combined with Experimental Investigation

Science.gov (United States)

Florea, R. M.

2017-06-01

Basic material concept, technology and some results of studies on aluminum matrix composite with dispersive aluminum nitride reinforcement was shown. Studied composites were manufactured by „in situ” technique. Aluminum nitride (AlN) has attracted large interest recently, because of its high thermal conductivity, good dielectric properties, high flexural strength, thermal expansion coefficient matches that of Si and its non-toxic nature, as a suitable material for hybrid integrated circuit substrates. AlMg alloys are the best matrix for AlN obtaining. Al2O3-AlMg, AlN-Al2O3, and AlN-AlMg binary diagrams were thermodynamically modelled. The obtained Gibbs free energies of components, solution parameters and stoichiometric phases were used to build a thermodynamic database of AlN- Al2O3-AlMg system. Obtaining of AlN with Liquid-phase of AlMg as matrix has been studied and compared with the thermodynamic results. The secondary phase microstructure has a significant effect on the final thermal conductivity of the obtained AlN. Thermodynamic modelling of AlN-Al2O3-AlMg system provided an important basis for understanding the obtaining behavior and interpreting the experimental results.

Effect of Al/N ratio during nucleation layer growth on Hall mobility and buffer leakage of molecular-beam epitaxy grown AlGaN/GaN heterostructures

International Nuclear Information System (INIS)

Storm, D.F.; Katzer, D.S.; Binari, S.C.; Shanabrook, B.V.; Zhou Lin; Smith, David J.

2004-01-01

AlGaN/GaN high electron mobility transistor structures have been grown by plasma-assisted molecular beam epitaxy on semi-insulating 4H-SiC utilizing an AlN nucleation layer. The electron Hall mobility of these structures increases from 1050 cm 2 /V s to greater than 1450 cm 2 /V s when the Al/N flux ratio during the growth of the nucleation layer is increased from 0.90 to 1.07. Buffer leakage currents increase abruptly by nearly three orders of magnitude when the Al/N ratio increases from below to above unity. Transmission electron microscopy indicates that high buffer leakage is correlated with the presence of stacking faults in the nucleation layer and cubic phase GaN in the buffer, while low mobilities are correlated with high dislocation densities

Structural characteristics of single crystalline GaN films grown on (111) diamond with AlN buffer

DEFF Research Database (Denmark)

Pécz, Béla; Tóth, Lajos; Barna, Árpád

2013-01-01

Hexagonal GaN films with the [0001] direction parallel to the surface normal were grown on (111) oriented single crystalline diamond substrates by plasma-assisted molecular beam epitaxy. Pre-treatments of the diamond surface with the nitrogen plasma beam, prior the nucleation of a thin AlN layer......, eliminated the inversion domains and reduced the density of threading dislocations in the GaN epilayers. The films have an in-plane epitaxial relationship [1010]GaN//[110]diamond. Thus GaN (0001) thin films of single epitaxial relationship and of single polarity were realised on diamond with AlN buffer....

Understanding the growth of micro and nano-crystalline AlN by thermal plasma process

Science.gov (United States)

Kanhe, Nilesh S.; Nawale, Ashok B.; Gawade, Rupesh L.; Puranik, Vedavati G.; Bhoraskar, Sudha V.; Das, Asoka K.; Mathe, Vikas L.

2012-01-01

We report the studies related to the growth of crystalline AlN in a DC thermal plasma reactor, operated by a transferred arc plasma torch. The reactor is capable of producing the nanoparticles of Al and AlN depending on the composition of the reacting gas. Al and AlN micro crystals are formed at the anode placed on the graphite and nano crystalline Al and AlN gets deposited on the inner surface of the plasma reactor. X-ray diffraction, Raman spectroscopy analysis, single crystal X-ray diffraction and TGA-DTA techniques are used to infer the purity of post process crystals as a hexagonal AlN. The average particle size using SEM was found to be around 30 μm. The morphology of nanoparticles of Al and AlN, nucleated by gas phase condensation in a homogeneous medium were studied by transmission electron microscopy analysis. The particle ranged in size between 15 and 80 nm in diameter. The possible growth mechanism of crystalline AlN at the anode has been explained on the basis of non-equilibrium processes in the core of the plasma and steep temperature gradient near its periphery. The gas phase species of AlN and various constituent were computed using Murphy code based on minimization of free energy. The process provides 50% yield of microcrystalline AlN and remaining of Al at anode and that of nanocrystalline h-AlN and c-Al collected from the walls of the chamber is about 33% and 67%, respectively.

Generating Tunable Magnetism in AlN Nanoribbons Using Anion/Cation Vacancies:a First-Principles Prediction

Science.gov (United States)

Chegeni, Mahdieh; Beiranvand, Razieh; Valedbagi, Shahoo

2017-04-01

Using first-principles approach, we theoretically study the effect of anion/cation vacancies on structural and electro-magnetic properties of zigzag AlN nanoribbons (ZAlNNRs). Calculations were performed using a full spin-polarized method within the density functional theory (DFT). Our findings shed light on how the edge states combined with vacancy engineering can affect electro-magnetic properties of ZAlNNRs. We found that depending on the nature and number of vacancies, ZAlNNRs can design as half-metal or semiconductor. Our results reveal a significant amount of spin magnetic moment for ZAlNNR with Al vacancies (VAl). These results may open new applications of AlN nano-materials in spintronics.

Effects of AlN nucleation layers on the growth of AlN films using high temperature hydride vapor phase epitaxy

International Nuclear Information System (INIS)

Balaji, M.; Claudel, A.; Fellmann, V.; Gélard, I.; Blanquet, E.; Boichot, R.; Pierret, A.

2012-01-01

Highlights: ► Growth of AlN Nucleation layers and its effect on high temperature AlN films quality were investigated. ► AlN nucleation layers stabilizes the epitaxial growth of AlN and improves the surface morphology of AlN films. ► Increasing growth temperature of AlN NLs as well as AlN films improves the structural quality and limits the formation of cracks. - Abstract: AlN layers were grown on c-plane sapphire substrates with AlN nucleation layers (NLs) using high temperature hydride vapor phase epitaxy (HT-HVPE). Insertion of low temperature NLs, as those typically used in MOVPE process, prior to the high temperature AlN (HT-AlN) layers has been investigated. The NLs surface morphology was studied by atomic force microscopy (AFM) and NLs thickness was measured by X-ray reflectivity. Increasing nucleation layer deposition temperature from 650 to 850 °C has been found to promote the growth of c-oriented epitaxial HT-AlN layers instead of polycrystalline layers. The growth of polycrystalline layers has been related to the formation of dis-oriented crystallites. The density of such disoriented crystallites has been found to decrease while increasing NLs deposition temperature. The HT-AlN layers have been characterized by X-ray diffraction θ − 2θ scan and (0 0 0 2) rocking curve measurement, Raman and photoluminescence spectroscopies, AFM and field emission scanning electron microscopy. Increasing the growth temperature of HT-AlN layers from 1200 to 1400 °C using a NL grown at 850 °C improves the structural quality as well as the surface morphology. As a matter of fact, full-width at half-maximum (FWHM) of 0 0 0 2 reflections was improved from 1900 to 864 arcsec for 1200 °C and 1400 °C, respectively. Related RMS roughness also found to decrease from 10 to 5.6 nm.

Experimental and computational study on the phase stability of Al-containing cubic transition metal nitrides

International Nuclear Information System (INIS)

Rovere, Florian; Mayrhofer, Paul H; Music, Denis; Ershov, Sergey; Baben, Moritz to; Schneider, Jochen M; Fuss, Hans-Gerd

2010-01-01

The phase stability of Al-containing cubic transition metal (TM) nitrides, where Al substitutes for TM (i.e. TM 1-x Al x N), is studied as a function of the TM valence electron concentration (VEC). X-ray diffraction and thermal analyses data of magnetron sputtered Ti 1-x Al x N, V 1-x Al x N and Cr 1-x Al x N films indicate increasing phase stability of cubic TM 1-x Al x N at larger Al contents and higher temperatures with increasing TM VEC. These experimental findings can be understood based on first principle investigations of ternary cubic TM 1-x Al x N with TM = Sc, Ti, V, Cr, Y, Zr and Nb where the TM VEC and the lattice strain are systematically varied. However, our experimental data indicate that, in addition to the decomposition energetics (cubic TM 1-x Al x N → cubic TMN + hexagonal AlN), future stability models have to include nitrogen release as one of the mechanisms that critically determine the overall phase stability of TM 1-x Al x N.

EDITORIAL: Non-polar and semipolar nitride semiconductors Non-polar and semipolar nitride semiconductors

Science.gov (United States)

Han, Jung; Kneissl, Michael

2012-02-01

Throughout the history of group-III-nitride materials and devices, scientific breakthroughs and technological advances have gone hand-in-hand. In the late 1980s and early 1990s, the discovery of the nucleation of smooth (0001) GaN films on c-plane sapphire and the activation of p-dopants in GaN led very quickly to the realization of high-brightness blue and green LEDs, followed by the first demonstration of GaN-based violet laser diodes in the mid 1990s. Today, blue InGaN LEDs boast record external quantum efficiencies exceeding 80% and the emission wavelength of the InGaN-based laser diode has been pushed into the green spectral range. Although these tremenduous advances have already spurred multi-billion dollar industries, there are still a number of scientific questions and technological issues that are unanswered. One key challenge is related to the polar nature of the III-nitride wurtzite crystal. Until a decade ago all research activities had almost exclusively concentrated on (0001)-oriented polar GaN layers and heterostructures. Although the device characteristics seem excellent, the strong polarization fields at GaN heterointerfaces can lead to a significant deterioration of the device performance. Triggered by the first demonstration non-polar GaN quantum wells grown on LiAlO2 by Waltereit and colleagues in 2000, impressive advances in the area of non-polar and semipolar nitride semiconductors and devices have been achieved. Today, a large variety of heterostructures free of polarization fields and exhibiting exceptional electronic and optical properties have been demonstrated, and the fundamental understanding of polar, semipolar and non-polar nitrides has made significant leaps forward. The contributions in this Semiconductor Science and Technology special issue on non-polar and semipolar nitride semiconductors provide an impressive and up-to-date cross-section of all areas of research and device physics in this field. The articles cover a wide range of

Ferromagnetic properties of Mn-doped AlN

International Nuclear Information System (INIS)

Li, H.; Bao, H.Q.; Song, B.; Wang, W.J.; Chen, X.L.; He, L.J.; Yuan, W.X.

2008-01-01

Mn-doped AlN polycrystalline powders with a wurtzite structure were synthesized by solid-state reactions. A red-orange band at 600 nm, due to Mn 3+ incorporated into the AlN lattice, is observed in the photoluminescence (PL) spectrum at room temperature (RT). Magnetic measurements show the samples possess hysteresis loops up to 300 K, indicating that the obtained powders are ferromagnetic at around RT. The Mn concentration-induced RT ferromagnetism is less than 1 at%. Our results confirm that the RT ferromagnetism can be realized in Mn-doped AlN

Comparative study of initial growth stage in PVT growth of AlN on SiC and on native AlN substrates

Energy Technology Data Exchange (ETDEWEB)

Epelbaum, B.M.; Heimann, P.; Bickermann, M.; Winnacker, A. [Department of Materials Science 6, University of Erlangen-Nuernberg, Martensstr. 7, 91058 Erlangen (Germany)

2005-05-01

The main issue in homoepitaxial growth of aluminum nitride (AlN) on native seed substrates appears to be aluminum oxynitride poisoning of seed surface leading to polycrystalline growth at 1750-1850 C. This is well below the lowest growth temperature appropriate for physical vapor transport (PVT) of bulk AlN, which is about 2150 C. Contrary, heteroepitaxial growth of AlN on SiC is relatively easy to achieve because of natural formation of a thin molten layer on the seed surface and VLS growth of AlN via the molten buffer layer. The most critical issue of AlN growth on SiC is cracking of the grown layer upon cooling as a result of different thermal expansion. Optimization of seeded growth process can be achieved by proper choice of SiC seed orientation and by use of ultra-pure starting material. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Electronic structures of the F-terminated AlN nanoribbons

Indian Academy of Sciences (India)

Using the first-principles calculations, electronic properties for the F-terminated AlN nanoribbons with both zigzag and armchair edges are studied. The results show that both the zigzag and armchair AlN nanoribbons are semiconducting and nonmagnetic, and the indirect band gap of the zigzag AlN nanoribbons and the ...

ALnS2:RE (A=K, Rb; Ln=La, Gd, Lu, Y): New optical materials family

International Nuclear Information System (INIS)

Jarý, V.; Havlák, L.; Bárta, J.; Mihóková, E.; Buryi, M.; Nikl, M.

2016-01-01

In the presented review paper, new potentially interesting material family, RE-doped ternary sulfides ALnS 2 (RE=Ce, Pr, Sm, Eu, Tb, Tm; A=Rb, K; Ln=La, Gd, Lu, Y) is discussed. Their synthesis is described and the structural and optical properties, characterized by methods of X-ray diffraction, time-resolved luminescence spectroscopy and electron paramagnetic resonance, are summarized and reviewed especially with respect to the influence of their composition. All samples discussed were synthesized in the form of transparent crystalline hexagonal platelets by chemical reaction under the flow of hydrogen sulfide. Their luminescence characteristics, including absorption, radioluminescence, photoluminescence excitation and emission spectra and decay kinetics, were measured and evaluated in a broad temperature (8–800 K) and concentration (0.002–20% of dopants) range. The application potential of mentioned compounds in the field of white LED solid state lightings or X-ray phosphors is thoroughly discussed. - Highlights: • RE-doped ALnS 2 (A=K, Rb; Ln=La, Gd, Lu, Y) were synthesized. • Their optical characteristics are summarized. • Concentration and temperature dependences of luminescence features investigated. • EPR technique is employed to explain Eu 2+ incorporation into KLuS 2 host. • The application potential in white LED and X-ray phosphors is discussed.

Production of AlN films: ion nitriding versus PVD coating

International Nuclear Information System (INIS)

Figueroa, U.; Salas, O.; Oseguera, J.

2004-01-01

The properties of AlN render this material very attractive for optical, electronic, and tribological applications; thus, a great interest exists for the production of thin AlN films on a variety of substrates. Many methods have been developed for this purpose where two processes stand out: plasma-assisted nitriding (PAN) and PVD coating. In the present paper, we compare the processing advantages and disadvantages of both methods in terms of the characteristics of the layers formed. AlN production by ion nitriding is very sensitive to presputtering cleaning and working pressure. Layers several micrometers thick can be produced in a few hours, which are formed by a fine mixture of Al+AlN. The surface morphology of the layers is rather rough. On the other hand, formation of PVD AlN coatings by DC reactive magnetron sputtering is more readily performed and better controlled than in ion nitriding. PVD results in macroscopically smoother AlN films and with similar thickness than the ion nitrided layers but produced in shorter processing times. The morphology of the PVD AlN layers is columnar with a fairly flat surface. Mechanisms for the formation of both types of AlN layers are proposed. One of the main differences between the two processes that explain the different AlN layer morphologies is the energy of the particles that arrive at the substrate. Considering only the processing advantages and the morphology of the AlN layers formed, PVD performs better than PAN processing

Compatibility of AlN ceramics with molten lithium

Energy Technology Data Exchange (ETDEWEB)

Yoneoka, Toshiaki; Sakurai, Toshiharu; Sato, Toshihiko; Tanaka, Satoru [Tokyo Univ., Department of Quantum Engineering and Systems Science, Tokyo (Japan)

2002-04-01

AlN ceramics were a candidate for electrically insulating materials and facing materials against molten breeder in a nuclear fusion reactor. In the nuclear fusion reactor, interactions of various structural materials with solid and liquid breeder materials as well as coolant materials are important. Therefore, corrosion tests of AlN ceramics with molten lithium were performed. AlN specimens of six kinds, different in sintering additives and manufacturing method, were used. AlN specimens were immersed into molten lithium at 823 K. Duration for the compatibility tests was about 2.8 Ms (32 days). Specimens with sintering additive of Y{sub 2}O{sub 3} by about 5 mass% formed the network structure of oxide in the crystals of AlN. It was considered that the corrosion proceeded by reduction of the oxide network and the penetration of molten lithium through the reduced pass of this network. For specimens without sintering additive, Al{sub 2}O{sub 3} containing by about 1.3% in raw material was converted to fine oxynitride particles on grain boundary or dissolved in AlN crystals. After immersion into lithium, these specimens were found to be sound in shape but reduced in electrical resistivity. These degradation of the two types specimens were considered to be caused by the reduction of oxygen components. On the other hand, a specimen sintered using CaO as sintering additive was finally became appreciably high purity. This specimen showed good compatibility for molten lithium at least up to 823 K. It was concluded that the reduction of oxygen concentration in AlN materials was essential in order to improve the compatibility for molten lithium. (author)

Polarity Control in Group-III Nitrides beyond Pragmatism

Science.gov (United States)

Mohn, Stefan; Stolyarchuk, Natalia; Markurt, Toni; Kirste, Ronny; Hoffmann, Marc P.; Collazo, Ramón; Courville, Aimeric; Di Felice, Rosa; Sitar, Zlatko; Vennéguès, Philippe; Albrecht, Martin

2016-05-01

Controlling the polarity of polar semiconductors on nonpolar substrates offers a wealth of device concepts in the form of heteropolar junctions. A key to realize such structures is an appropriate buffer-layer design that, in the past, has been developed by empiricism. GaN or ZnO on sapphire are prominent examples for that. Understanding the basic processes that mediate polarity, however, is still an unsolved problem. In this work, we study the structure of buffer layers for group-III nitrides on sapphire by transmission electron microscopy as an example. We show that it is the conversion of the sapphire surface into a rhombohedral aluminum-oxynitride layer that converts the initial N-polar surface to Al polarity. With the various AlxOyNz phases of the pseudobinary Al2O3 -AlN system and their tolerance against intrinsic defects, typical for oxides, a smooth transition between the octahedrally coordinated Al in the sapphire and the tetrahedrally coordinated Al in AlN becomes feasible. Based on these results, we discuss the consequences for achieving either polarity and shed light on widely applied concepts in the field of group-III nitrides like nitridation and low-temperature buffer layers.

Critical behavior of the spontaneous polarization and the dielectric susceptibility close to the cubic-tetragonal transition in BaTiO3

Directory of Open Access Journals (Sweden)

H. Yurtseven

2015-09-01

Full Text Available Using Landau mean field model, the spontaneous polarization and the dielectric susceptibility are analyzed as functions of temperature and pressure close to the cubic–tetragonal (ferroelectric–paraelectric transition in BaTiO3. From the analysis of the dielectric susceptibility and the spontaneous polarization, the critical exponents are deduced in the classical and quantum limits for BaTiO3. From the critical behavior of the dielectric susceptibility, the spontaneous polarization can be described for the ferroelectric–paraelectric (cubic to tetragonal transition between 4 and 8 GPa at constant temperatures of 0 to 200 K in BaTiO3 within the Landau mean field model given here.

Magnetic tunnel junctions with AlN and AlNxOy barriers

International Nuclear Information System (INIS)

Schwickert, M. M.; Childress, J. R.; Fontana, R. E.; Kellock, A. J.; Rice, P. M.; Ho, M. K.; Thompson, T. J.; Gurney, B. A.

2001-01-01

Nonoxide tunnel barriers such as AlN are of interest for magnetic tunnel junctions to avoid the oxidation of the magnetic electrodes. We have investigated the fabrication and properties of thin AlN-based barriers for use in low resistance magnetic tunnel junctions. Electronic, magnetic and structural data of tunnel valves of the form Ta (100 Aa)/PtMn (300 Aa)/CoFe 20 (20 Aa - 25 Aa)/barrier/CoFe 20 (10 - 20 Aa)/NiFe 16 (35 - 40 Aa)/Ta (100 Aa) are presented, where the barrier consists of AlN, AlN x O y or AlN/AlO x with total thicknesses between 8 and 15 Aa. The tunnel junctions were sputter deposited and then lithographically patterned down to 2 x 2μm 2 devices. AlN was deposited by reactive sputtering from an Al target with 20% - 35% N 2 in the Ar sputter gas at room temperature, resulting in stoichiometric growth of AlN x (x=0.50±0.05), as determined by RBS. TEM analysis shows that the as-deposited AlN barrier is crystalline. For AlN barriers and AlN followed by natural O 2 oxidation, we obtain tunnel magnetoresistance >10% with specific junction resistance R j down to 60Ωμm 2 . [copyright] 2001 American Institute of Physics

AlN piezoelectric films for sensing and actuation

NARCIS (Netherlands)

Tran, A.T.

2014-01-01

Aluminum Nitride (AlN) is explored as a thin film material for piezoelectric MEMS applications. A pulse DC reactive sputtering technique is used to deposit the AlN thin films and process parameters are optimized to obtain good crystallinity and high c-axis orientation films. A CMOS compatible

Lateral polarity control of III-nitride thin film and application in GaN Schottky barrier diode

Science.gov (United States)

Li, Junmei; Guo, Wei; Sheikhi, Moheb; Li, Hongwei; Bo, Baoxue; Ye, Jichun

2018-05-01

N-polar and III-polar GaN and AlN epitaxial thin films grown side by side on single sapphire substrate was reported. Surface morphology, wet etching susceptibility and bi-axial strain conditions were investigated and the polarity control scheme was utilized in the fabrication of Schottky barrier diode where ohmic contact and Schottky contact were deposited on N-polar domains and Ga-polar domains, respectively. The influence of N-polarity on on-state resistivity and I–V characteristic was discussed, demonstrating that lateral polarity structure of GaN and AlN can be widely used in new designs of optoelectronic and electronic devices. Project partially supported by the National Key Research and Development Program of China (No. 2016YFB0400802), the National Natural Science Foundation of China (No. 61704176), and the Open project of Zhejiang Key Laboratory for Advanced Microelectronic Intelligent Systems and Applications (No. ZJUAMIS1704).

Enhancement of c-axis texture of AlN films by substrate implantation

International Nuclear Information System (INIS)

Chen, C.H.; Yeh, J.M.; Hwang, J.

2005-01-01

Highly oriented AlN films are successfully deposited on B + implanted Si(1 1 1) substrates in a radio frequency inductively coupled plasma (RF/ICP) system. The implanted energy and dose used for the B + implanted Si(1 1 1) substrates are 200 keV and 10 15 cm -2 , respectively. The c-axis texture of AlN films can be affected by RF gun power and ion implantation. Experimental results show that the full width at half-maximum (FWHM) of AlN(0 0 2) in the X-ray rocking curve measurements decreases with increasing RF gun power. The optimum condition is at 500 W, where the FWHM of the AlN films deposited on Si(1 1 1) with and without B + implantation are 2.77 and 3.17, respectively. In average, the FWHM of the AlN films on B + implanted Si(1 1 1) are less than those on Si(1 1 1) by a factor of ∼10%. The enhancement of c-axis of AlN films due to B + implantation is attributed to the reduction of AlN grains. Raman spectra also suggest that ion implantation plays a role in reducing the tensile stress in AlN films deposited on B + implanted Si(1 1 1)

Cubic Gallium Nitride on Micropatterned Si (001) for Longer Wavelength LEDs

Energy Technology Data Exchange (ETDEWEB)

Durniak, Mark T. [Rensselaer Polytechnic Inst., Troy, NY (United States). Dept. of Materials Science and Engineering; Chaudhuri, Anabil [Univ. of New Mexico, Albuquerque, NM (United States). Center for High Technology Materials; Smith, Michael L. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Advanced Material Sciences; Allerman, Andrew A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Advanced Material Sciences; Lee, S. C. [Univ. of New Mexico, Albuquerque, NM (United States). Center for High Technology Materials; Brueck, S. R. J. [Univ. of New Mexico, Albuquerque, NM (United States). Center for High Technology Materials; Wetzel, Christian [Rensselaer Polytechnic Inst., Troy, NY (United States). Dept. of Physics, Applied Physics, and Astronomy and Dept. of Materials Science and Engineering

2016-03-01

GaInN/GaN heterostructures of cubic phase have the potential to overcome the limitations of wurtzite structures commonly used for light emitting and laser diodes. Wurtzite GaInN suffers from large internal polarization fields, which force design compromises ( 0001 ) towards ultra-narrow quantum wells and reduce recombination volume and efficiency. Cubic GaInN microstripes grown at Rensselaer Polytechnic Institute by metal organic vapor phase epitaxy on micropatterned Si , with {111} v-grooves oriented along Si ( 001 ) , offer a system free of internal polarization fields, wider quantum wells, and smaller <00$\\bar1$> bandgap energy. We prepared 6 and 9 nm Ga _x In _1-x N/GaN single quantum well structures with peak wavelength ranges from 520 to 570 nm with photons predominately polarized perpendicular to the grooves. We estimate a cubic InN composition range of 0 < x < 0.5 and an upper limit of the internal quantum efficiency of 50%. Stripe geometry and polarization may be suitable for mode confinement and reduced threshold stimulated emission.

Potential of AlN nanostructures as hydrogen storage materials.

Science.gov (United States)

Wang, Qian; Sun, Qiang; Jena, Puru; Kawazoe, Yoshiyuki

2009-03-24

The capability of AlN nanostructures (nanocages, nanocones, nanotubes, and nanowires) to store hydrogen has been studied using gradient-corrected density functional theory. In contrast to bulk AlN, which has the wurtzite structure and four-fold coordination, the Al sites in AlN nanostructures are unsaturated and have two- and three-fold coordination. Each Al atom is capable of binding one H(2) molecule in quasi-molecular form, leading to 4.7 wt % hydrogen, irrespective of the topology of the nanostructures. With the exception of AlN nanotubes, energetics does not support the adsorption of additional hydrogen. The binding energies of hydrogen to these unsaturated metal sites lie in the range of 0.1-0.2 eV/H(2) and are ideal for applications under ambient thermodynamic conditions. Furthermore, these materials do not suffer from the clustering problem that often plagues metal-coated carbon nanostructures.

Charge transport in non-polar and semi-polar III-V nitride heterostructures

International Nuclear Information System (INIS)

Konar, Aniruddha; Verma, Amit; Fang, Tian; Zhao, Pei; Jana, Raj; Jena, Debdeep

2012-01-01

Compared to the intense research focus on the optical properties, the transport properties in non-polar and semi-polar III-nitride semiconductors remain relatively unexplored to date. The purpose of this paper is to discuss charge-transport properties in non-polar and semi-polar orientations of GaN in a comparative fashion to what is known for transport in polar orientations. A comprehensive approach is adopted, starting from an investigation of the differences in the electronic bandstructure along different polar orientations of GaN. The polarization fields along various orientations are then discussed, followed by the low-field electron and hole mobilities. A number of scattering mechanisms that are specific to non-polar and semi-polar GaN heterostructures are identified, and their effects are evaluated. Many of these scattering mechanisms originate due to the coupling of polarization with disorder and defects in various incarnations depending on the crystal orientation. The effect of polarization orientation on carrier injection into quantum-well light-emitting diodes is discussed. This paper ends with a discussion of orientation-dependent high-field charge-transport properties including velocity saturation, instabilities and tunneling transport. Possible open problems and opportunities are also discussed. (paper)

Lattice damage induced by Tb-implanted AlN crystalline films

International Nuclear Information System (INIS)

Lu Fei; Hu Hui; Rizzi, A.

2002-01-01

AlN films with thickness from 100 to 1000 nm were grown on SiC substrate by MBE. AlN crystalline films were doped by implantation with 160 keV Tb ions to fluences of 5x10 14 , 1.5x10 15 , 3x10 15 and 6x10 15 ions/cm 2 , respectively. The damage profiles in AlN films induced by Tb implantation were investigated using RBS/channeling technique. A procedure developed by Feldman and Rodgers was used to extract damage profile by considering the dechanneling mechanism of multiple. The comparison of the extracted profile with TRIM prediction shows a significant difference in the shape and in the position of damage profile. The damage profile in AlN film is similar as Tb distribution. The RBS/channeling of Tb-implanted AlN film before and after 950 deg. C annealing treatments show a good consistency, which indicate that high temperature annealing cannot result in a significant change in both crystal damage and in Tb distribution

Influence of SrF_2-doping in AlN ceramics on scintillation and dosimeter properties

International Nuclear Information System (INIS)

Kojima, Kaori; Okada, Go; Fukuda, Kentaro; Yanagida, Takayuki

2016-01-01

In this study, we synthesized undoped AlN and SrF_2-doped AlN (AlN-SrF_2) ceramics by Spark Plasma Sintering (SPS), and we characterized their optical, scintillation and dosimeter properties. The prepared undoped AlN ceramic had gray color and visually non-transparent whereas, with an addition of SrF_2, the transparency improved and became translucent. The measured in-line transmittance was approximately 0.2% at wavelengths longer than 500 nm. While the addition of SrF_2 decreased the scintillation intensity, the decay time was significantly fastened, which is a great advantage for fast photon counting-based measurements. Both the thermally-stimulated luminescence (TSL) and optically-stimulated luminescence (OSL) showed good linear response from the milli-gray range to over 10 Gy. The sensitivity seems to decrease by an addition of SrF_2 as it suppresses structural defect centers which are responsible for dosimeter properties. However, the main TSL glow peak position shifts to higher temperature with the addition of SrF_2, which indicates that inclusion of SrF_2 improves the TSL signal stability. - Highlights: • We synthesized undoped and SrF_2-doped AlN ceramics by Spark Plasma Sintering. • We evaluated scintillator and dosimeter properties of undoped and SrF_2-doped AlN. • By doping with SrF_2, the decay time is shortened. • By doping with SrF_2, the stability of TSL and OSL is improved.

Development of Field-Controlled Smart Optic Materials (ScN, AlN) with Rare Earth Dopants

Science.gov (United States)

Kim, Hyun-Jung; Park, Yeonjoon; King, Glen C.; Choi, Sang H.

2012-01-01

The purpose of this investigation is to develop the fundamental materials and fabrication technology for field-controlled spectrally active optics that are essential for industry, NASA, and DOD applications such as: membrane optics, filters for LIDARs, windows for sensors, telescopes, spectroscopes, cameras, flat-panel displays, etc. ScN and AlN thin films were fabricated on c-axis Sapphire (0001) or quartz substrate with the RF and DC magnetron sputtering. The crystal structure of AlN in fcc (rocksalt) and hcp (wurtzite) were controlled. Advanced electrical characterizations were performed, including I-V and Hall Effect Measurement. ScN film has a free carrier density of 5.8 x 10(exp 20)/per cubic centimeter and a conductivity of 1.1 x 10(exp 3) per centimeter. The background ntype conductivity of as-grown ScN has enough free electrons that can readily interact with the photons. The high density of free electrons and relatively low mobility indicate that these films contain a high level of shallow donors as well as deep levels. Also, the UV-Vis spectrum of ScN and AlN thin films with rare earth elements (Er or Ho) were measured at room temperature. Their optical band gaps were estimated to be about 2.33eV and 2.24eV, respectively, which are obviously smaller than that of undoped thin film ScN (2.4eV). The red-shifted absorption onset gives direct evidence for the decrease of band gap (Eg) and the energy broadening of valence band states are attributable to the doping. As the doped elements enter the ScN crystal lattices, the localized band edge states form at the doped sites with a reduction of Eg. Using a variable angle spectroscopic ellipsometer, the decrease in refractive index with applied field is observed with a smaller shift in absorption coefficient.

Substrate dependence of TM-polarized light emission characteristics of BAlGaN/AlN quantum wells

Science.gov (United States)

Park, Seoung-Hwan; Ahn, Doyeol

2018-06-01

To study the substrate dependence of light emission characteristics of transverse-magnetic (TM)-polarized light emitted from BAlGaN/AlN quantum wells (QWs) grown on GaN and AlN substrates were investigated theoretically. It is found that the topmost valence subband for QW structures grown on AlN substrate, is heavy hole state (HH1) while that for QW structures grown on GaN substrate is crystal-field split off light hole state (CL1), irrespective of the boron content. Since TM-polarized light emission is associated with the light hole state, the TM-polarized emission peak of BAlGaN/AlN QW structures grown on GaN substrate is expected to be much larger than that of the QW structure grown on AlN substrate. Also, both QW structures show that the spontaneous emission peak of BAlGaN/AlN QW structures would be improved with the inclusion of the boron. However, it rapidly begins to decrease when the boron content exceeds a critical value.

AlN metal-semiconductor field-effect transistors using Si-ion implantation

Science.gov (United States)

Okumura, Hironori; Suihkonen, Sami; Lemettinen, Jori; Uedono, Akira; Zhang, Yuhao; Piedra, Daniel; Palacios, Tomás

2018-04-01

We report on the electrical characterization of Si-ion implanted AlN layers and the first demonstration of metal-semiconductor field-effect transistors (MESFETs) with an ion-implanted AlN channel. The ion-implanted AlN layers with Si dose of 5 × 1014 cm-2 exhibit n-type characteristics after thermal annealing at 1230 °C. The ion-implanted AlN MESFETs provide good drain current saturation and stable pinch-off operation even at 250 °C. The off-state breakdown voltage is 2370 V for drain-to-gate spacing of 25 µm. These results show the great potential of AlN-channel transistors for high-temperature and high-power applications.

Effects of AlN Coating Layer on High Temperature Characteristics of Langasite SAW Sensors

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Lin Shu

2016-09-01

Full Text Available High temperature characteristics of langasite surface acoustic wave (SAW devices coated with an AlN thin film have been investigated in this work. The AlN films were deposited on the prepared SAW devices by mid-frequency magnetron sputtering. The SAW devices coated with AlN films were measured from room temperature to 600 °C. The results show that the SAW devices can work up to 600 °C. The AlN coating layer can protect and improve the performance of the SAW devices at high temperature. The SAW velocity increases with increasing AlN coating layer thickness. The temperature coefficients of frequency (TCF of the prepared SAW devices decrease with increasing thickness of AlN coating layers, while the electromechanical coupling coefficient (K2 of the SAW devices increases with increasing AlN film thickness. The K2 of the SAW devices increases by about 20% from room temperature to 600 °C. The results suggest that AlN coating layer can not only protect the SAW devices from environmental contamination, but also improve the K2 of the SAW devices.

A qualitative semi-classical treatment of an isolated semi-polar quantum dot

International Nuclear Information System (INIS)

Young, Toby D

2011-01-01

To qualitatively determine the behaviour of micro-macro properties of a quantum dot grown in a non-polar direction, we propose a simple semi-classical model based on well established ideas. We take into account the following empirical phenomena: (i) The displacement and induced strain at heterojunctions; (ii) The electrostatic potential arising from piezoelectric and spontaneous polarisation; and (iii) The localisation of excitons (particle-hole pairs) arising from quantum confinement. After some algebraic manipulation used to cast the formalism into an arbitrarily rotated frame, a numerical model is developed for the case of a semi-polar wurtzite GaN quantum dot buried in a wurtzite AlN matrix. This scheme is found to provide a satisfying qualitative description of an isolated semi-polar quantum dot in a way that is accessible to further physical interpretation and quantification.

Enhanced nuclear magnetic resonance in a non-magnetic cubic doublet

International Nuclear Information System (INIS)

Veenendaal, E.J.

1982-01-01

In this thesis two lanthanide compounds are studied which show enhanced nuclear magnetism at low temperatures: Rb 2 NaHoF 6 and CsNaHoF 6 . Chapter II gives a description of the 4 He-circulating refrigerator, which was built to provide the low temperatures required for the polarization of the enhanced nuclear moments. This type of dilution refrigerator was chosen because of its simple design and large cooling power. Chapter III is devoted to a comparison of the different types of dilution refrigerators. A theoretical discussion is given of their performance, starting from the differential equations, which govern the temperature distribution in the refrigerator. In chapter IV the actual performance of the refrigerator, described in chapter II is discussed. In chapter V a description of the NMR-apparatus, developed for very-low-temperature NMR experiments is given. In chapter VI experimental results on the compound Rb 2 NaHoF 6 are presented. The CEF-ground state of this compound is probably the non-magnetic doublet GAMMA 3 , but at a temperature of 170 K a structural phase transition lowers the crystal symmetry from cubic to tetragonal and the doublet is split into two singlets. In chapter VII specific heat, (enhanced) nuclear magnetic resonance and magnetization measurements on the compound Cs 2 NaHoF 6 are presented which also has a GAMMA 3 -doublet ground state. In zero magnetic field the degeneracy of the doublet is removed at a temperature of 393 mK, where a phase transition is induced by quadrupolar interactions. (Auth.)

Semiempirical self-consistent polarization description of bulk water, the liquid-vapor interface, and cubic ice.

Science.gov (United States)

Murdachaew, Garold; Mundy, Christopher J; Schenter, Gregory K; Laino, Teodoro; Hutter, Jürg

2011-06-16

We have applied an efficient electronic structure approach, the semiempirical self-consistent polarization neglect of diatomic differential overlap (SCP-NDDO) method, previously parametrized to reproduce properties of water clusters by Chang, Schenter, and Garrett [ J. Chem. Phys. 2008 , 128 , 164111 ] and now implemented in the CP2K package, to model ambient liquid water at 300 K (both the bulk and the liquid-vapor interface) and cubic ice at 15 and 250 K. The SCP-NDDO potential retains its transferability and good performance across the full range of conditions encountered in the clusters and the bulk phases of water. In particular, we obtain good results for the density, radial distribution functions, enthalpy of vaporization, self-diffusion coefficient, molecular dipole moment distribution, and hydrogen bond populations, in comparison to experimental measurements. © 2011 American Chemical Society

Study of excess carrier dynamics in polar, semi-polar, and non-polar (In,Ga)N epilayers and QWs

Energy Technology Data Exchange (ETDEWEB)

Aleksiejunas, R. [Institute of Applied Research, Vilnius University, Sauletekio Ave. 9-III, 10222 Vilnius (Lithuania); Laser Research Center, Vilnius University, Sauletekio Ave. 10, 10222 Vilnius (Lithuania); Lubys, L.; Jarasiunas, K. [Institute of Applied Research, Vilnius University, Sauletekio Ave. 9-III, 10222 Vilnius (Lithuania); Vengris, M. [Laser Research Center, Vilnius University, Sauletekio Ave. 10, 10222 Vilnius (Lithuania); Wernicke, T.; Hoffmann, V.; Netzel, C.; Knauer, A.; Weyers, M. [Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12498 Berlin (Germany); Kneissl, M. [Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12498 Berlin (Germany); Institute of Solid State Physics, Technische Universitaet Berlin, Hardenbergstr. 36, 10623 Berlin (Germany)

2011-07-15

We studied carrier recombination and diffusion in GaN/sapphire templates, (In,Ga)N layers, and (In,Ga)N quantum well structures oriented along the polar [0001], semi-polar [11-22], and non-polar [11-20] orientations by means of light induced transient grating, differential transmission, and photoluminescence optical techniques. We show that the lifetime of excess carriers drops by orders of magnitude when changing the orientation from polar to non-polar, both in GaN templates and (In,Ga)N layers. We attribute the shorter lifetime to carrier trapping by extended structural defects that are more abundant in non-polar grown samples. In addition, we observe pronounced carrier localization effects in the semi- and non-polar layers. We show that thick (In,Ga)N layers inherit the properties of the GaN templates. However, the thin quantum well structures show a lower carrier trapping activity. So, a better electrical quality can be assumed as compared to the thick (In,Ga)N layers. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Effect of AlN layer on the bipolar resistive switching behavior in TiN thin film based ReRAM device for non-volatile memory application

Science.gov (United States)

Prakash, Ravi; Kaur, Davinder

2018-05-01

The effect of an additional AlN layer in the Cu/TiN/AlN/Pt stack configuration deposited using sputtering has been investigated. The Cu/TiN/AlN/Pt device shows a tristate resistive switching. Multilevel switching is facilitated by ionic and metallic filament formation, and the nature of the filaments formed is confirmed by performing a resistance vs. temperature measurement. Ohmic behaviour and trap controlled space charge limited current (SCLC) conduction mechanisms are confirmed as dominant conduction mechanism at low resistance state (LRS) and high resistance state (HRS). High resistance ratio (102) corresponding to HRS and LRS, good write/erase endurance (105) and non-volatile long retention (105s) are also observed. Higher thermal conductivity of the AlN layer is the main reasons for the enhancement of resistive switching performance in Cu/TiN/AlN/Pt cell. The above result suggests the feasibility of Cu/TiN/AlN/Pt devices for multilevel nonvolatile ReRAM application.

Adsorption properties of AlN on Si(111) surface: A density functional study

Science.gov (United States)

Yuan, Yinmei; Zuo, Ran; Mao, Keke; Tang, Binlong; Zhang, Zhou; Liu, Jun; Zhong, Tingting

2018-04-01

In the process of preparing GaN on Si substrate by MOCVD, an AlN buffer layer is very important. In this study, we conducted density functional theory calculations on the adsorption of AlN molecule on Si(111)-(2 × 2) surface, with the AlN molecule located horizontally or vertically above Si(111) surface at different adsorption sites. The calculations revealed that the lowest adsorption energy was at the N-top-Al-bridge site in the horizontal configuration, with the narrowest band gap, indicating that it was the most preferential adsorption growth status of AlN. In the vertical configurations, N adatom was more reactive and convenient to form bonds with the topmost Si atoms than Al adatom. When the N-end of the AlN molecule was located downward, the hollow site was the preferred adsorption site; when the Al-end was located downward, the bridge site was the most energetically favorable. Moreover, we investigated some electronic properties such as partial density of states, electron density difference, Mulliken populations, etc., revealing the microscale mechanism for AlN adsorption on Si(111) surface and providing theoretical support for adjusting the processing parameters during AlN or GaN production.

Design of reproducible polarized and non-polarized edge filters using genetic algorithm

International Nuclear Information System (INIS)

Ejigu, Efrem Kebede; Lacquet, B M

2010-01-01

Recent advancement in optical fibre communications technology is partly due to the advancement of optical thin film technology. The advancement of optical thin film technology includes the development of new and existing optical filter design methods. The genetic algorithm is one of the new design methods that show promising results in designing a number of complicated design specifications. It is the finding of this study that the genetic algorithm design method, through its optimization capability, can give more reliable and reproducible designs of any specifications. The design method in this study optimizes the thickness of each layer to get to the best possible solution. Its capability and unavoidable limitations in designing polarized and non-polarized edge filters from absorptive and dispersive materials is well demonstrated. It is also demonstrated that polarized and non-polarized designs from the genetic algorithm are reproducible with great success. This research has accomplished the great task of formulating a computer program using the genetic algorithm in a Matlab environment for the design of a reproducible polarized and non-polarized filters of any sort from any kind of materials

AlN nanoparticle-reinforced nanocrystalline Al matrix composites: Fabrication and mechanical properties

International Nuclear Information System (INIS)

Liu, Y.Q.; Cong, H.T.; Wang, W.; Sun, C.H.; Cheng, H.M.

2009-01-01

To improve the specific strength and stiffness of Al-based composites, AlN/Al nanoparticles were in-situ synthesized by arc plasma evaporation of Al in nitrogen atmosphere and consolidated by hot-pressing to fabricate AlN nanoparticle-reinforced nanocrystalline Al composites (0-39 vol.% AlN). Microstructure characterization shows that AlN nanoparticles homogeneously distribute in the matrix of Al nanocrystalline, which forms atomically bonded interfaces of AlN/Al. The hardness and the elastic modulus of the nanocomposite have been improved dramatically, up to 3.48 GPa and 142 GPa, respectively. Such improvement is believed to result from the grain refinement strengthening and the interface strengthening (load transfer) between the Al matrix and AlN nanoparticles

Plasma deposition of cubic boron nitride films from non-toxic material at low temperatures

International Nuclear Information System (INIS)

Karim, M.Z.; Cameron, D.C.; Murphy, M.J.; Hashmi, M.S.J.

1991-01-01

Boron nitride has become the focus of a considerable amount of interest because of its properties which relate closely to those of carbon. In particular, the cubic nitride phase has extreme hardness and very high thermal conductivity similar to the properties of diamond. The conventional methods of synthesis use the highly toxic and inflammable gas diborane (B 2 H 6 ) as the reactant material. A study has been made of the deposition of thin films of boron nitride (BN) using non-toxic material by the plasma-assisted chemical vapour deposition technique. The source material was borane-ammonia (BH 3 -NH 3 ) which is a crystalline solid at room temperature with a high vapour pressure. The BH 3 -NH 3 vapour was decomposed in a 13.56 MHz nitrogen plasma coupled either inductively or capacitively with the system. The composition of the films was assessed by measuring their IR absorption when deposited on silicon and KBr substrates. The hexagonal (graphitic) and cubic (diamond-like) allotropes can be distinguished by their characteristic absorption bands which occur at 1365 and 780 cm -1 (hexagonal) and 1070 cm -1 (cubic). We have deposited BN films consisting of a mixture of hexagonal and cubic phases; the relative content of the cubic phase was found to be directly dependent on r.f. power and substrate bias. (orig.)

Dispersing surface-modified imogolite nanotubes in polar and non-polar solvents

Science.gov (United States)

Li, Ming; Brant, Jonathan A.

2018-02-01

Furthering the development of nanocomposite structures, namely membranes for water treatment applications, requires that methods be developed to ensure nanoparticle dispersion in polar and non-polar solvents, as both are widely used in associated synthesis techniques. Here, we report on a two-step method to graft polyvinylpyrrolidone (PVP), and a one-step method for octadecylphosphonic acid (OPA), onto the outer surfaces of imogolite nanotubes. The goal of these approaches was to improve and maintain nanotube dispersion in polymer compatible polar and non-polar solvents. The PVP coating modified the imogolite surface charge from positive to weakly negative at pH ≤ 9; the OPA made it weakly positive at acidic pH values to negative at pH ≥ 7. The PVP surface coating stabilized the nanotubes through steric hindrance in polar protic, dipolar aprotic, and chloroform. In difference to the PVP, the OPA surface coating allowed the nanotubes to be dispersed in n-hexane and chloroform, but not in the polar solvents. The lack of miscibility in the polar solvents, as well as the better dispersion in n-hexane, was attributed to the stronger hydrophobicity of the OPA polymer relative to the PVP. [Figure not available: see fulltext.

Synthesis of c-axis oriented AlN thin films on different substrates: A review

International Nuclear Information System (INIS)

Iriarte, G.F.; Rodriguez, J.G.; Calle, F.

2010-01-01

Highly c-axis oriented AlN thin films have been deposited by reactive sputtering on different substrates. The crystallographic properties of layered film structures consisting of a piezoelectric layer, aluminum nitride (AlN), synthesized on a variety of substrates, have been examined. Aluminum nitride thin films have been deposited by reactive pulsed-DC magnetron sputtering using an aluminum target in an Ar/N 2 gas mixture. The influence of the most critical deposition parameters on the AlN thin film crystallography has been investigated by means of X-ray diffraction (XRD) analysis of the rocking curve Full-Width at Half Maximum (FWHM) of the AlN-(0 0 0 2) peak. The relationship between the substrate, the synthesis parameters and the crystallographic orientation of the AlN thin films is discussed. A guide is provided showing how to optimize these conditions to obtain highly c-axis oriented AlN thin films on substrates of different nature.

Hall effect thruster with an AlN chamber

International Nuclear Information System (INIS)

Barral, S.; Jayet, Y.; Mazouffre, S.; Veron, E.; Echegut, P.; Dudeck, M.

2005-01-01

The plasma discharge of a Hall-effect thruster (SPT) is strongly depending of the plasma-insulated wall interactions. These interactions are mainly related to the energy deposition, potential sheath effect and electron secondary emission rate (e.s.e.). In usual SPT, the annular channel is made of BN-SiO 2 . The SPT100-ML (laboratory model will be tested with an AlN chamber in the French test facility Pivoine in the laboratoire d'Aerothermique (Orleans-France). The different parameters such as discharge current, thrust, plasma oscillations and wall temperature will studied for several operating conditions. The results will be compared with a fluid model developed in IPPT (Warsaw-Poland) taking into account electron emission from the internal and external walls and using previous experimental measurements of e.s.e. for AlN from ONERA (Toulouse-France). The surface state of AlN will be analysed before and after experiments by an Environmental Scanning Electron Microscope and by a Strength Electron Microscope. (author)

Photonic Crystal Polarizing and Non-Polarizing Beam Splitters

International Nuclear Information System (INIS)

Chun-Ying, Guan; Jin-Hui, Shi; Li-Boo, Yuan

2008-01-01

A polarizing beam splitter (PBS) and a non-polarizing beam splitter (NPBS) based on a photonic crystal (PC) directional coupler are demonstrated. The photonic crystal directional coupler consists of a hexagonal lattice of dielectric pillars in air and has a complete photonic band gap. The photonic band structure and the band gap map are calculated using the plane wave expansion (PWE) method. The splitting properties of the splitter are investigated numerically using the finite difference time domain (FDTD) method

Cubic AlGaN/GaN structures for device application

Energy Technology Data Exchange (ETDEWEB)

Schoermann, Joerg

2007-05-15

The aim of this work was the growth and the characterization of cubic GaN, cubic AlGaN/GaN heterostructures and cubic AlN/GaN superlattice structures. Reduction of the surface and interface roughness was the key issue to show the potential for the use of cubic nitrides in futur devices. All structures were grown by plasma assisted molecular beam epitaxy on free standing 3C-SiC (001) substrates. In situ reflection high energy electron diffraction was first investigated to determine the Ga coverage of c-GaN during growth. Using the intensity of the electron beam as a probe, optimum growth conditions were found when a 1 monolayer coverage is formed at the surface. GaN samples grown under these conditions reveal excellent structural properties. On top of the c-GaN buffer c-AlGaN/GaN single and multiple quantum wells were deposited. The well widths ranged from 2.5 to 7.5 nm. During growth of Al{sub 0.15}Ga{sub 0.85}N/GaN quantum wells clear reflection high energy electron diffraction oscillations were observed indicating a two dimensional growth mode. We observed strong room-temperature, ultraviolet photoluminescence at about 3.3 eV with a minimum linewidth of 90 meV. The peak energy of the emission versus well width is reproduced by a square-well Poisson- Schroedinger model calculation. We found that piezoelectric effects are absent in c-III nitrides with a (001) growth direction. Intersubband transition in the wavelength range from 1.6 {mu}m to 2.1 {mu}m was systematically investigated in AlN/GaN superlattices (SL), grown on 100 nm thick c-GaN buffer layers. The SLs consisted of 20 periods of GaN wells with a thickness between 1.5 nm and 2.1 nm and AlN barriers with a thickness of 1.35 nm. The first intersubband transitions were observed in metastable cubic III nitride structures in the range between 1.6 {mu}m and 2.1 {mu}m. (orig.)

Investigation of blue luminescence in Mg doped AlN films

Energy Technology Data Exchange (ETDEWEB)

Sun, Xiliang; Xiong, Juan, E-mail: xiongjuana@163.com; Zhang, Weihai; Liu, Lei; Gu, Haoshuang, E-mail: guhsh@hubu.edu.cn

2015-02-05

Highlights: • AlN films doped with 0.8–4.4 at.% Mg were deposited by magnetron sputtering. • Structural and photoluminescence properties of Mg-doped AlN films were synthesized in detailed. • A broad blue band centered at 420 nm and 440 nm was observed in Mg-doped AlN films. • An enhancement of A1 (TO) mod and a slightly blue-shift of E2 (high) mode were observed. - Abstract: The Al{sub 1−x}Mg{sub x}N thin films were deposited on (1 0 0) silicon substrates by magnetron sputtering. The structural and photoluminescence properties of the films with varying Mg concentrations were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), Raman spectra and photoluminescence (PL), respectively. The results clearly showed that the Mg atoms successfully incorporated into AlN, while the crystal structure of the films was maintained. The Raman spectra of Al{sub 1−x}Mg{sub x}N films reveals the enhancement of A{sub 1} (TO) mode, a slightly blue-shift and an augment in FWHM for E{sub 2} (high) phonon mode with increasing Mg content, which can be associated with the deterioration of (0 0 2) orientation and the appearance of (1 0 0) orientation. A broad blue band centered at 420 nm and 440 nm was observed in Mg-doped AlN films. It was suggested that the transitions from the shallow donor level not only to the ground state but also to the excited states of the deep level was responsible for the broad blue emission band. This work indicates the AlN film for the application in lighting emission devices.

High-quality AlN films grown on chemical vapor-deposited graphene films

Directory of Open Access Journals (Sweden)

Chen Bin-Hao

2016-01-01

Full Text Available We report the growth of high-quality AlN films on graphene. The graphene films were synthesized by CVD and then transferred onto silicon substrates. Epitaxial aluminum nitride films were deposited by DC magnetron sputtering on both graphene as an intermediate layer and silicon as a substrate. The structural characteristics of the AlN films and graphene were investigated. Highly c-axis-oriented AlN crystal structures are investigated based on the XRDpatterns observations.

Cobalt nanoparticles deposited and embedded in AlN: Magnetic, magneto-optical, and morphological properties

International Nuclear Information System (INIS)

Huttel, Y.; Gomez, H.; Clavero, C.; Cebollada, A.; Armelles, G.; Navarro, E.; Ciria, M.; Benito, L.; Arnaudas, J.I.; Kellock, A.J.

2004-01-01

We present a structural, morphological, magnetic, and magneto-optical study of cobalt nanoparticles deposited on 50 A ring AlN/c-sapphire substrates and embedded in an AlN matrix. The dependence of the properties of Co nanoclusters deposited on AlN with growth temperature and amount of deposited Co are studied and discussed. Also we directly compare the properties of as grown and AlN embedded Co nanoclusters and show that the AlN matrix has a strong impact on their magnetic and magneto-optical properties

Enhancing the piezoelectric properties of flexible hybrid AlN materials using semi-crystalline parylene

Science.gov (United States)

Jackson, Nathan; Mathewson, Alan

2017-04-01

Flexible piezoelectric materials are desired for numerous applications including biomedical, wearable, and flexible electronics. However, most flexible piezoelectric materials are not compatible with CMOS fabrication technology, which is desired for most MEMS applications. This paper reports on the development of a hybrid flexible piezoelectric material consisting of aluminium nitride (AlN) and a semi-crystalline polymer substrate. Various types of semi-crystalline parylene and polyimide materials were investigated as the polymer substrate. The crystallinity and surfaces of the polymer substrates were modified by micro-roughening and annealing in order to determine the effects on the AlN quality. The AlN crystallinity and piezoelectric properties decreased when the polymer surfaces were treated with O2 plasma. However, increasing the crystallinity of the parylene substrate prior to deposition of AlN caused enhanced c-axis (002) AlN crystallinity and piezoelectric response of the AlN. Piezoelectric properties of 200 °C annealed parylene-N substrate resulted in an AlN d 33 value of 4.87 pm V-1 compared to 2.17 pm V-1 for AlN on polyimide and 4.0 pm V-1 for unannealed AlN/parylene-N. The electrical response measurements to an applied force demonstrated that the parylene/AlN hybrid material had higher V pp (0.918 V) than commercial flexible piezoelectric material (PVDF) (V pp 0.36 V). The results in this paper demonstrate that the piezoelectric properties of a flexible AlN hybrid material can be enhanced by increasing the crystallinity of the polymer substrate, and the enhanced properties can function better than previous flexible piezoelectrics.

Structure of AlN films deposited by magnetron sputtering method

Directory of Open Access Journals (Sweden)

Nowakowska-Langier K.

2015-09-01

Full Text Available AlN films on a Si substrate were synthesized by magnetron sputtering method. A dual magnetron system operating in AC mode was used in the experiment. Processes of synthesis were carried out in the atmosphere of a mixture of Ar/N2. Morphology and phase structure of the AlN films were investigated at different pressures. Structural characterizations were performed by means of SEM and X-ray diffraction methods. Our results show that the use of magnetron sputtering method in a dual magnetron sputtering system is an effective way to produce AlN layers which are characterized by a good adhesion to the silicon substrate. The morphology of the films is strongly dependent on the Ar/N2 gas mixture pressure. An increase of the mixture pressure is accompanied by a columnar growth of the layers. The films obtained at the pressure below 1 Pa are characterized by finer and compacter structure. The AlN films are characterized by a polycrystalline hexagonal (wurtzite structure in which the crystallographic orientation depends on the gas mixture pressure.

On compensation in Si-doped AlN

Science.gov (United States)

Harris, Joshua S.; Baker, Jonathon N.; Gaddy, Benjamin E.; Bryan, Isaac; Bryan, Zachary; Mirrielees, Kelsey J.; Reddy, Pramod; Collazo, Ramón; Sitar, Zlatko; Irving, Douglas L.

2018-04-01

Controllable n-type doping over wide ranges of carrier concentrations in AlN, or Al-rich AlGaN, is critical to realizing next-generation applications in high-power electronics and deep UV light sources. Silicon is not a hydrogenic donor in AlN as it is in GaN; despite this, the carrier concentration should be controllable, albeit less efficiently, by increasing the donor concentration during growth. At low doping levels, an increase in the Si content leads to a commensurate increase in free electrons. Problematically, this trend does not persist to higher doping levels. In fact, a further increase in the Si concentration leads to a decrease in free electron concentration; this is commonly referred to as the compensation knee. While the nature of this decrease has been attributed to a variety of compensating defects, the mechanism and identity of the predominant defects associated with the knee have not been conclusively determined. Density functional theory calculations using hybrid exchange-correlation functionals have identified VAl+n SiAl complexes as central to mechanistically understanding compensation in the high Si limit in AlN, while secondary impurities and vacancies tend to dominate compensation in the low Si limit. The formation energies and optical signatures of these defects in AlN are calculated and utilized in a grand canonical charge balance solver to identify carrier concentrations as a function of Si content. The results were found to qualitatively reproduce the experimentally observed compensation knee. Furthermore, these calculations predict a shift in the optical emissions present in the high and low doping limits, which is confirmed with detailed photoluminescence measurements.

Synthesis and characterization of straight and stacked-sheet AlN nanowires with high purity

International Nuclear Information System (INIS)

Lei, M.; Yang, H.; Li, P.G.; Tang, W.H.

2008-01-01

Large-scale AlN nanowires with hexagonal crystal structure were synthesized by the direct nitridation method at high temperatures. The experimental results indicate that these single-crystalline AlN nanowires have high purity and consist of straight and stacked-sheet nanowires. It is found that straight AlN nanowire grows along [1, 1, -2, 0] direction, whereas the stacked-sheet nanowire with hexagonal cross section is along [0 0 0 1] direction. It is thought that vapor-solid (VS) mechanism should be responsible for the growth of AlN nanowires

Evidence for graphite-like hexagonal AlN nanosheets epitaxially grown on single crystal Ag(111)

Energy Technology Data Exchange (ETDEWEB)

Tsipas, P.; Kassavetis, S.; Tsoutsou, D.; Xenogiannopoulou, E.; Golias, E.; Giamini, S. A.; Dimoulas, A. [National Center for Scientific Research “Demokritos,” 15310 Athens (Greece); Grazianetti, C.; Fanciulli, M. [Laboratorio MDM, IMM-CNR, I-20864, Agrate Brianza (MB) (Italy); Dipartimento di Scienza dei Materiali, Università degli Studi di Milano Bicocca, I-20126, Milano (Italy); Chiappe, D.; Molle, A. [Laboratorio MDM, IMM-CNR, I-20864, Agrate Brianza (MB) (Italy)

2013-12-16

Ultrathin (sub-monolayer to 12 monolayers) AlN nanosheets are grown epitaxially by plasma assisted molecular beam epitaxy on Ag(111) single crystals. Electron diffraction and scanning tunneling microscopy provide evidence that AlN on Ag adopts a graphite-like hexagonal structure with a larger lattice constant compared to bulk-like wurtzite AlN. This claim is further supported by ultraviolet photoelectron spectroscopy indicating a reduced energy bandgap as expected for hexagonal AlN.

Heme and non-heme iron transporters in non-polarized and polarized cells

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Yasui Yumiko

2010-06-01

Full Text Available Abstract Background Heme and non-heme iron from diet, and recycled iron from hemoglobin are important products of the synthesis of iron-containing molecules. In excess, iron is potentially toxic because it can produce reactive oxygen species through the Fenton reaction. Humans can absorb, transport, store, and recycle iron without an excretory system to remove excess iron. Two candidate heme transporters and two iron transporters have been reported thus far. Heme incorporated into cells is degraded by heme oxygenases (HOs, and the iron product is reutilized by the body. To specify the processes of heme uptake and degradation, and the reutilization of iron, we determined the subcellular localizations of these transporters and HOs. Results In this study, we analyzed the subcellular localizations of 2 isoenzymes of HOs, 4 isoforms of divalent metal transporter 1 (DMT1, and 2 candidate heme transporters--heme carrier protein 1 (HCP1 and heme responsive gene-1 (HRG-1--in non-polarized and polarized cells. In non-polarized cells, HCP1, HRG-1, and DMT1A-I are located in the plasma membrane. In polarized cells, they show distinct localizations: HCP1 and DMT1A-I are located in the apical membrane, whereas HRG-1 is located in the basolateral membrane and lysosome. 16Leu at DMT1A-I N-terminal cytosolic domain was found to be crucial for plasma membrane localization. HOs are located in smooth endoplasmic reticulum and colocalize with NADPH-cytochrome P450 reductase. Conclusions HCP1 and DMT1A-I are localized to the apical membrane, and HRG-1 to the basolateral membrane and lysosome. These findings suggest that HCP1 and DMT1A-I have functions in the uptake of dietary heme and non-heme iron. HRG-1 can transport endocytosed heme from the lysosome into the cytosol. These localization studies support a model in which cytosolic heme can be degraded by HOs, and the resulting iron is exported into tissue fluids via the iron transporter ferroportin 1, which is

Insights on activation enthalpy for non-Schmid slip in body-centered cubic metals

International Nuclear Information System (INIS)

Hale, Lucas M.; Lim, Hojun; Zimmerman, Jonathan A.; Battaile, Corbett C.; Weinberger, Christopher R.

2015-01-01

We use insights gained from atomistic simulation to develop an activation enthalpy model for dislocation slip in body-centered cubic iron. Using a classical potential that predicts dislocation core stabilities consistent with ab initio predictions, we quantify the non-Schmid stress-dependent effects of slip. The kink-pair activation enthalpy is evaluated and a model is identified as a function of the general stress state. Our model enlarges the applicability of the classic Kocks activation enthalpy model to materials with non-Schmid behavior

Coating of Si3N4 fine particles with AlN by fluidized bed-CVD; Ryudoso CVD ho ni yoru Si3N4 biryushi no AlN hifuku

Energy Technology Data Exchange (ETDEWEB)

Chiba, S.; Oyama, Y. [Hokkaido National Industrial Research Institute, Sapporo (Japan); Harima, K.; Kondo, K.; Shinohara, K. [Hokkaido University, Sapporo (Japan)

1996-03-10

Agglomerates of 100-250 {mu}m consisting of Si3N4 primary particles of 0.76 {mu}m were made with a rotary vibrating sieve. Si3N4 fine particles were coated with AlN by gas phase reaction with AlCl3 and NH3 in some fluidized beds of the agglomerates. The cross sectional distribution of AlN in the agglomerate was measured by EPMA analysis. As a result, uniform deposition of AlN was obtained at a relatively low reaction temperature and low gas velocity. 4 refs., 3 figs.

Berkovich Nanoindentation on AlN Thin Films

Directory of Open Access Journals (Sweden)

Jian Sheng-Rui

2010-01-01

Full Text Available Abstract Berkovich nanoindentation-induced mechanical deformation mechanisms of AlN thin films have been investigated by using atomic force microscopy (AFM and cross-sectional transmission electron microscopy (XTEM techniques. AlN thin films are deposited on the metal-organic chemical-vapor deposition (MOCVD derived Si-doped (2 × 1017 cm−3 GaN template by using the helicon sputtering system. The XTEM samples were prepared by means of focused ion beam (FIB milling to accurately position the cross-section of the nanoindented area. The hardness and Young’s modulus of AlN thin films were measured by a Berkovich nanoindenter operated with the continuous contact stiffness measurements (CSM option. The obtained values of the hardness and Young’s modulus are 22 and 332 GPa, respectively. The XTEM images taken in the vicinity regions just underneath the indenter tip revealed that the multiple “pop-ins” observed in the load–displacement curve during loading are due primarily to the activities of dislocation nucleation and propagation. The absence of discontinuities in the unloading segments of load–displacement curve suggests that no pressure-induced phase transition was involved. Results obtained in this study may also have technological implications for estimating possible mechanical damages induced by the fabrication processes of making the AlN-based devices.

A Novel Fully Depleted Air AlN Silicon-on-Insulator Metal-Oxide-Semiconductor Field Effect Transistor

International Nuclear Information System (INIS)

Yuan, Yang; Yong, Gao; Peng-Liang, Gong

2008-01-01

A novel fully depleted air AlN silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistor (MOS-FET) is presented, which can eliminate the self-heating effect and solve the problem that the off-state current of SOI MOSFETs increases and the threshold voltage characteristics become worse when employing a high thermal conductivity material as a buried layer. The simulation results reveal that the lattice temperature in normal SOI devices is 75 K higher than the atmosphere temperature, while the lattice temperature is just 4K higher than the atmosphere temperature resulting in less severe self-heating effect in air AlN SOI MOSFETs and AlN SOI MOSFETs. The on-state current of air AlN SOI MOSFETs is similar to the AlN SOI structure, and improves 12.3% more than that of normal SOI MOSFETs. The off-state current of AlN SOI is 6.7 times of normal SOI MOSFETs, while the counterpart of air AlN SOI MOSFETs is lower than that of SOI MOSFETs by two orders of magnitude. The threshold voltage change of air AlN SOI MOSFETs with different drain voltage is much less than that of AlN SOI devices, when the drain voltage is biased at 0.8 V, this difference is 28mV, so the threshold voltage change induced by employing high thermal conductivity material is cured. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Band alignment of HfO{sub 2}/AlN heterojunction investigated by X-ray photoelectron spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Ye, Gang [School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Wang, Hong, E-mail: ewanghong@ntu.edu.sg [School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); CNRS-International-NTU-THALES Research Alliances/UMI 3288, 50 Nanyang Drive, Singapore 637553 (Singapore); Ji, Rong [Data Storage Institute, Agency for Science Technology and Research (A-STAR), Singapore 117608 (Singapore)

2016-04-18

The band alignment between AlN and Atomic-Layer-Deposited (ALD) HfO{sub 2} was determined by X-ray photoelectron spectroscopy (XPS). The shift of Al 2p core-levels to lower binding energies with the decrease of take-off angles θ indicated upward band bending occurred at the AlN surface. Based on the angle-resolved XPS measurements combined with numerical calculations, valence band discontinuity ΔE{sub V} of 0.4 ± 0.2 eV at HfO{sub 2}/AlN interface was determined by taking AlN surface band bending into account. By taking the band gap of HfO{sub 2} and AlN as 5.8 eV and 6.2 eV, respectively, a type-II band line-up was found between HfO{sub 2} and AlN.

Material and device studies for the development of ultra-violet light emitting diodes (UV-LEDS) along polar, non-polar and semi-polar directions

Science.gov (United States)

Chandrasekaran, Ramya

Over the past few years, significant effort was dedicated to the development of ultraviolet light emitting diodes (UV-LEDs) for a variety of applications. Such applications include chemical and biological detection, water purification and solid-state lighting. III-Nitride LEDs based on multiple quantum wells (MQWs) grown along the conventional [0001] (polar) direction suffer from the quantum confined Stark effect (QCSE), due to the existence of strong electric fields that arise from spontaneous and piezoelectric polarization. Thus, there is strong motivation to develop MQW-based III-nitride LED structures grown along non-polar and semi-polar directions. The goal of this dissertation is to develop UV-LEDs along the [0001] polar and [11 2¯ 0] non-polar directions by the method of Molecular Beam Epitaxy (MBE). The polar and non-polar LEDs were grown on the C-plane and R-plane sapphire substrates respectively. This work is a combination of materials science studies related to the nucleation, growth and n- and p-type doping of III-nitride films on these two substrates, as well as device studies related to fabrication and characterization of UV-LEDs. It was observed that the crystallographic orientation of the III-nitride films grown on R-plane sapphire depends strongly on the kinetic conditions of growth of the Aluminum Nitride (AIN) buffer. Specifically, growth of the AIN buffer under group III-rich conditions leads to nitride films having the (11 2¯ 0) non polar planes parallel to the sapphire surface, while growth of the buffer under nitrogen rich conditions leads to nitride films with the (11 2¯ 6) semi-polar planes parallel to the sapphire surface. The electron concentration and mobility for the films grown along the polar, non-polar and semi-polar directions were investigated. P-type doping of Gallium Nitride (GaN) films grown on the nonpolar (11 2¯ 0) plane do not suffer from polarity inversion and thus the material was doped p-type with a hole concentration

Growth of high quality AlN films on CVD diamond by RF reactive magnetron sputtering

Science.gov (United States)

Chen, Liang-xian; Liu, Hao; Liu, Sheng; Li, Cheng-ming; Wang, Yi-chao; An, Kang; Hua, Chen-yi; Liu, Jin-long; Wei, Jun-jun; Hei, Li-fu; Lv, Fan-xiu

2018-02-01

A highly oriented AlN layer has been successfully grown along the c-axis on a polycrystalline chemical vapor deposited (CVD) diamond by RF reactive magnetron sputtering. Structural, morphological and mechanical properties of the heterostructure were investigated by Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), Transmission Electron Microscopy (TEM), X-ray diffraction (XRD), Nano-indentation and Four-probe meter. A compact AlN film was demonstrated on the diamond layer, showing columnar grains and a low surface roughness of 1.4 nm. TEM results revealed a sharp AlN/diamond interface, which was characterized by the presence of a distinct 10 nm thick buffer layer resulting from the initial AlN growth stage. The FWHM of AlN (002) diffraction peak and its rocking curve are as low as 0.41° and 3.35° respectively, indicating a highly preferred orientation along the c-axis. AlN sputtered films deposited on glass substrates show a higher bulk resistivity (up to 3 × 1012 Ω cm), compared to AlN films deposited on diamond (∼1010 Ω cm). Finally, the film hardness and Young's modulus of AlN films on diamond are 25.8 GPa and 489.5 GPa, respectively.

Oxidation behaviour of a Ti2AlN MAX-phase coating

International Nuclear Information System (INIS)

Wang Qimin; Kim, Kwangho; Garkas, W; Renteria, A Flores; Leyens, C; Sun Chao

2011-01-01

In this paper, we reported the oxidation behaviour of Ti 2 AlN coatings on a -TiAl substrate. The coatings composed mainly of Ti 2 AlN MAX phase were obtained by magnetron sputtering and subsequent vacuum annealing. Isothermal oxidation tests at 700-900 deg. C were performed in air. The results indicated that the oxidation resistance of the -TiAl alloy can be improved by depositing a Ti 2 AlN layer on the alloy surface, especially at high temperatures. An Al-rich oxide scale formed on the coating surfaces during oxidation. This scale acts as diffusion barrier blocking the ingress of oxidation, and effectively protects the coated alloys from further oxidation attack.

Metalorganic vapor phase epitaxy of AlN on sapphire with low etch pit density

Science.gov (United States)

Koleske, D. D.; Figiel, J. J.; Alliman, D. L.; Gunning, B. P.; Kempisty, J. M.; Creighton, J. R.; Mishima, A.; Ikenaga, K.

2017-06-01

Using metalorganic vapor phase epitaxy, methods were developed to achieve AlN films on sapphire with low etch pit density (EPD). Key to this achievement was using the same AlN growth recipe and only varying the pre-growth conditioning of the quartz-ware. After AlN growth, the quartz-ware was removed from the growth chamber and either exposed to room air or moved into the N2 purged glove box and exposed to H2O vapor. After the quartz-ware was exposed to room air or H2O, the AlN film growth was found to be more reproducible, resulting in films with (0002) and (10-12) x-ray diffraction (XRD) rocking curve linewidths of 200 and 500 arc sec, respectively, and EPDs < 100 cm-2. The EPD was found to correlate with (0002) linewidths, suggesting that the etch pits are associated with open core screw dislocations similar to GaN films. Once reproducible AlN conditions were established using the H2O pre-treatment, it was found that even small doses of trimethylaluminum (TMAl)/NH3 on the quartz-ware surfaces generated AlN films with higher EPDs. The presence of these residual TMAl/NH3-derived coatings in metalorganic vapor phase epitaxy (MOVPE) systems and their impact on the sapphire surface during heating might explain why reproducible growth of AlN on sapphire is difficult.

The influence of non-polar lipids on tear film dynamics

KAUST Repository

Bruna, M.

2014-04-04

© 2014 Cambridge University Press. In this paper we examine the effect that physiological non-polar lipids, residing on the surface of an aqueous tear film, have on the film evolution. In our model we track the evolution of the thickness of the non-polar lipid layer, the thickness of the aqueous layer and the concentration of polar lipids which reside at the interface between the two. We also utilise a force balance in the non-polar lipid layer in order to determine its velocity. We show how to obtain previous models in the literature from our model by making particular choices of the parameters. We see the formation of boundary layers in some of these submodels, across which the concentration of polar lipid and the non-polar lipid velocity and film thickness vary. We solve our model numerically for physically realistic parameter values, and we find that the evolution of the aqueous layer and the polar lipid layer are similar to that described by previous authors. However, there are interesting dynamics for the non-polar lipid layer. The effects of altering the key parameters are highlighted and discussed. In particular, we see that the Marangoni number plays a key role in determining how far over the eye the non-polar lipid spreads.

Local heteroepitaxy as an adhesion mechanism in aluminium coatings cold gas sprayed on AlN substrates

International Nuclear Information System (INIS)

Wüstefeld, Christina; Rafaja, David; Motylenko, Mykhaylo; Ullrich, Christiane; Drehmann, Rico; Grund, Thomas; Lampke, Thomas; Wielage, Bernhard

2017-01-01

Cold gas sprayed Al coatings deposited onto wurtzitic AlN substrates show excellent adhesion. As a possible adhesion mechanism, the local heteroepitaxy between Al and AlN was considered and verified experimentally in Al coatings, which were deposited using magnetron sputtering or cold gas spraying on single-crystalline and polycrystalline AlN substrates. Analysis of the local orientation relationships at the Al/AlN interfaces revealed that preferentially such lattice planes of Al align parallel with the upright lattice planes of AlN, which possess similar interplanar distances. The matching lattice planes in the Al coatings grew as continuations of the lattice planes in the AlN substrates. In all samples under study, the parallel alignment of the lattice planes {220}_A_l and {110}_A_l_N was found. Additional orientation relationships between Al and AlN arose if parallel lattice planes with similar interplanar spacing could be found in both counterparts via rotation of the lattice planes {220}_A_l around their normal direction. Still, the oriented growth of Al on AlN is only possible if Al atoms in the deposited coatings are mobile enough to rearrange along the AlN surface. Whereas the mobility of Al atoms in a magnetron sputtering process is expected to be sufficiently high, the intrinsic mobility of Al atoms in the cold gas sprayed particles is anticipated to be low. However, the auxiliary microstructure analyses have shown that local recrystallization and partial melting are two phenomena, which can facilitate the rearrangement of Al atoms within the cold gas sprayed coating.

Application of the cubic-plus-association equation of state to mixtures with polar chemicals and high pressures

DEFF Research Database (Denmark)

Folas, Georgios; Kontogeorgis, Georgios; Michelsen, Michael Locht

2006-01-01

was given to low pressures and liquid-liquid equilibria. In this work, CPA is applied to two classes of mixtures containing polar chemicals for which high-pressure data are available: acetone-containing systems and dimethyl ether mixtures. They are of both scientific and industrial importance. Moreover, CPA......The cubic-plus-association (CPA) equation of state has been previously applied to vapor-liquid, liquid-liquid, and solid-liquid equilibria of mixtures containing associating compounds (water, alcohols, glycols, acids, amines). Although some high-pressure applications have been presented, emphasis...... to conventional models such as MHV2. Very good results are also obtained for multicomponent vapor-liquid-liquid equilibria for mixtures containing gases, water, and dimethyl ether. Finally, it is shown that high-pressure SLE can be predicted based on interaction parameters obtained from low-pressure SLE data....

Semi-polar GaN heteroepitaxy an high index Si-surfaces

Energy Technology Data Exchange (ETDEWEB)

Ravash, Roghaiyeh; Blaesing, Juergen; Hempel, Thomas; Dadgar, Armin; Christen, Juergen; Krost, Alois [Otto-von-Guericke-University Magdeburg, FNW/IEP/AHE, Magdeburg (Germany)

2011-07-01

Due to the lack of GaN homosubstrates, the growth of GaN-based devices is usually performed on heterosubstrates as sapphire or SiC. These substrates are either insulating or expensive, and both unavailable in large diameters. Meanwhile, silicon can meet the requirements for a low price and thermally well conducting substrate and also enabling the integration of optoelectronic devices with Si-based electronics. Up to now, the good matching of hexagonal GaN with the three-fold symmetry of Si(111) greatly promotes the c-axis orientated growth of GaN on this surface plane. A large spontaneous and piezoelectric polarization oriented along the c-axis exists in such hexagonal structure leading to low efficiencies for thick quantum wells. The attention to the growth of non-polar or semi-polar GaN based epitaxial structures has been increased recently because of reducing the effect of the polarization fields in these growth directions. Therefore we studied semi-polar GaN epilayers grown by metalorganic vapor phase epitaxy on silicon substrates with different orientations from Si(211) to Si(711). We observed that AlN seeding layer growth time play a significant role in obtaining the different GaN texture.

Non-commutativity in polar coordinates

Energy Technology Data Exchange (ETDEWEB)

Edwards, James P. [Universidad Michoacana de San Nicolas de Hidalgo, Ciudad Universitaria, Instituto de Fisica y Matematicas, Morelia, Michoacan (Mexico)

2017-05-15

We reconsider the fundamental commutation relations for non-commutative R{sup 2} described in polar coordinates with non-commutativity parameter θ. Previous analysis found that the natural transition from Cartesian coordinates to the traditional polar system led to a representation of [r, φ] as an everywhere diverging series. In this article we compute the Borel resummation of this series, showing that it can subsequently be extended throughout parameter space and hence provide an interpretation of this commutator. Our analysis provides a complete solution for arbitrary r and θ that reproduces the earlier calculations at lowest order and benefits from being generally applicable to problems in a two-dimensional non-commutative space. We compare our results to previous literature in the (pseudo-)commuting limit, finding a surprising spatial dependence for the coordinate commutator when θ >> r{sup 2}. Finally, we raise some questions for future study in light of this progress. (orig.)

Electric Charge Accumulation in Polar and Non-Polar Polymers under Electron Beam Irradiation

Science.gov (United States)

Nagasawa, Kenichiro; Honjoh, Masato; Takada, Tatsuo; Miyake, Hiroaki; Tanaka, Yasuhiro

The electric charge accumulation under an electron beam irradiation (40 keV and 60 keV) was measured by using the pressure wave propagation (PWP) method in the dielectric insulation materials, such as polar polymeric films (polycarbonate (PC), polyethylene-naphthalate (PEN), polyimide (PI), and polyethylene-terephthalate (PET)) and non-polar polymeric films (polystyrene (PS), polypropylene (PP), polyethylene (PE) and polytetrafluoroethylene (PTFE)). The PE and PTFE (non-polar polymers) showed the properties of large amount of electric charge accumulation over 50 C/m3 and long saturation time over 80 minutes. The PP and PS (non-polar polymer) showed the properties of middle amount of charge accumulation about 20 C/m3 and middle saturation time about 1 to 20 minutes. The PC, PEN, PI and PET (polar polymers) showed the properties of small amount of charge accumulation about 5 to 20 C/m3 and within short saturation time about 1.0 minutes. This paper summarizes the relationship between the properties of charge accumulation and chemical structural formula, and compares between the electro static potential distribution with negative charged polymer and its chemical structural formula.

Electric charge accumulation in polar and non-polar polymers under electron beam irradiation

International Nuclear Information System (INIS)

Nagasawa, Kenichiro; Honjoh, Masato; Takada, Tatsuo; Miyake, Hiroaki; Tanaka, Yasuhiro

2010-01-01

The electric charge accumulation under an electron beam irradiation (40 keV and 60 keV) was measured by using the pressure wave propagation (PWP) method in the dielectric insulation materials, such as polar polymeric films (polycarbonate (PC), polyethylene-naphthalate (PEN), polyimide (PI), and polyethylene-terephthalate (PET)) and non-polar polymeric films (polystyrene (PS), polypropylene (PP), polyethylene (PE) and polytetrafluoroethylene (PTFE)). The PE and PTFE (non-polar polymers) showed the properties of large amount of electric charge accumulation over 50 C/m 3 and long saturation time over 80 minutes. The PP and PS (non-polar polymer) showed the properties of middle amount of charge accumulation about 20 C/m 3 and middle saturation time about 1 to 20 minutes. The PC, PEN, PI and PET (polar polymers) showed the properties of small amount of charge accumulation about 5 to 20 C/m 3 and within short saturation time about 1.0 minutes. This paper summarizes the relationship between the properties of charge accumulation and chemical structural formula, and compares between the electro static potential distribution with negative charged polymer and its chemical structural formula. (author)

InN{0001} polarity by ion scattering spectroscopy

International Nuclear Information System (INIS)

Walker, M.; Veal, T.D.; McConville, C.F.; Lu, Hai; Schaff, W.J.

2005-01-01

The polarity of a wurtzite InN thin film grown on a c-plane sapphire substrate with GaN and AlN buffer layers has been investigated by co-axial impact collision ion scattering spectroscopy (CAICISS). Time of flight (TOF) spectra of He + ions scattered from the surface of the InN film were taken as a function of the incident angles of the primary 3 keV He + ions. From the TOF spectra, the polar angle-dependence of the In scattered intensity was obtained. Comparison of the experimental polar-angle dependence of the In CAICISS signal intensity with simulated results for the various volume ratios of (0001)- and (000 anti 1)-polarity domains indicated that the InN film is approximately 75% In-polarity and 25% N-polarity. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

On local and global aspects of the 1:4 resonance in the conservative cubic Hénon maps

Science.gov (United States)

Gonchenko, M.; Gonchenko, S. V.; Ovsyannikov, I.; Vieiro, A.

2018-04-01

We study the 1:4 resonance for the conservative cubic Hénon maps C± with positive and negative cubic terms. These maps show up different bifurcation structures both for fixed points with eigenvalues ±i and for 4-periodic orbits. While for C-, the 1:4 resonance unfolding has the so-called Arnold degeneracy [the first Birkhoff twist coefficient equals (in absolute value) to the first resonant term coefficient], the map C+ has a different type of degeneracy because the resonant term can vanish. In the last case, non-symmetric points are created and destroyed at pitchfork bifurcations and, as a result of global bifurcations, the 1:4 resonant chain of islands rotates by π/4. For both maps, several bifurcations are detected and illustrated.

Effects of AlN on the densification and mechanical properties of pressureless-sintered SiC ceramics

Directory of Open Access Journals (Sweden)

Qisong Li

2016-02-01

Full Text Available In the present work, SiC ceramics was fabricated with AlN using B4C and C as sintering aids by a solid-state pressureless-sintered method. The effects of AlN contents on the densification, mechanical properties, phase compositions, and microstructure evolutions of as-obtained SiC ceramics were thoroughly investigated. AlN was found to promote further densification of the SiC ceramics due to its evaporation over 1800 °C, transportation, and solidification in the pores resulted from SiC grain coarsening. The highest relative density of 99.65% was achieved for SiC sample with 15.0 wt% AlN by the pressureless-sintered method at 2130 °C for 1 h in Ar atmosphere. Furthermore, the fracture mechanism for SiC ceramics containing AlN tended to transfer from single transgranular fracture mode to both transgranular fracture and intergranular fracture modes when the sample with 30.0 wt% AlN sintered at 1900 °C for 1 h in Ar. Also, SiC ceramics with 30.0 wt% AlN exhibited the highest fracture toughness of 5.23 MPa m1/2 when sintered at 1900 °C.

An AlN cantilever for a wake-up switch triggered by air pressure change

International Nuclear Information System (INIS)

Kaiho, Y; Itoh, T; Maeda, R; Takahashi, H; Matsumoto, K; Shimoyama, I; Tomimatsu, Y; Kobayashi, T

2013-01-01

This research reports an AlN cantilever with an air chamber for a wake-up switch triggered by air pressure change. The proposed sensor is designed to fulfil both high sensitivity and low power consumption. By combining an air chamber to the one side of the AlN cantilever surface, the barometric pressure change generates a piezoelectric voltage. Thus, a wake-up switch triggered by air pressure change can be achieved using an AlN cantilever. The size of the fabricated AlN cantilever was 2000 μm × 1000 μm × 2 μm. The sensitivity to static differential pressure was 11.5 mV/Pa at the range of −20 Pa to 20 Pa. We evaluated the response of the sensor, which was composed of the AlN cantilever and the chamber of 60 ml in volume, when air pressure change was applied. The output voltage increased with increasing the applied air pressure change. It was observed that the maximum output voltage of 50 mV was generated when the air pressure change was 13 Pa

Modeling diffusion coefficients in binary mixtures of polar and non-polar compounds

DEFF Research Database (Denmark)

Medvedev, Oleg; Shapiro, Alexander

2005-01-01

The theory of transport coefficients in liquids, developed previously, is tested on a description of the diffusion coefficients in binary polar/non-polar mixtures, by applying advanced thermodynamic models. Comparison to a large set of experimental data shows good performance of the model. Only f...

Valence and conduction band offsets of β-Ga2O3/AlN heterojunction

Science.gov (United States)

Sun, Haiding; Torres Castanedo, C. G.; Liu, Kaikai; Li, Kuang-Hui; Guo, Wenzhe; Lin, Ronghui; Liu, Xinwei; Li, Jingtao; Li, Xiaohang

2017-10-01

Both β-Ga2O3 and wurtzite AlN have wide bandgaps of 4.5-4.9 and 6.1 eV, respectively. We calculated the in-plane lattice mismatch between the (-201) plane of β-Ga2O3 and the (0002) plane of AlN, which was found to be 2.4%. This is the smallest mismatch between β-Ga2O3 and binary III-nitrides which is beneficial for the formation of a high quality β-Ga2O3/AlN heterojunction. However, the valence and conduction band offsets (VBO and CBO) at the β-Ga2O3/AlN heterojunction have not yet been identified. In this study, a very thin (less than 2 nm) β-Ga2O3 layer was deposited on an AlN/sapphire template to form the heterojunction by pulsed laser deposition. High-resolution X-ray photoelectron spectroscopy revealed the core-level (CL) binding energies of Ga 3d and Al 2p with respect to the valence band maximum in individual β-Ga2O3 and AlN layers, respectively. The separation between Ga 3d and Al 2p CLs at the β-Ga2O3/AlN interface was also measured. Eventually, the VBO was found to be -0.55 ± 0.05 eV. Consequently, a staggered-gap (type II) heterojunction with a CBO of -1.75 ± 0.05 eV was determined. The identification of the band alignment of the β-Ga2O3/AlN heterojunction could facilitate the design of optical and electronic devices based on these and related alloys.

Surface state of GaN after rapid-thermal-annealing using AlN cap-layer

Energy Technology Data Exchange (ETDEWEB)

El-Zammar, G., E-mail: georgio.elzammar@univ-tours.fr [Université François Rabelais, Tours, GREMAN, CNRS UMR 7347, 10 rue Thalès de Milet CS 97155, 37071 Tours Cedex 2 (France); Khalfaoui, W. [Université François Rabelais, Tours, GREMAN, CNRS UMR 7347, 10 rue Thalès de Milet CS 97155, 37071 Tours Cedex 2 (France); Oheix, T. [Université François Rabelais, Tours, GREMAN, CNRS UMR 7347, 10 rue Thalès de Milet CS 97155, 37071 Tours Cedex 2 (France); STMicroelectronics, 10 rue Thalès de Milet CS 97155, 37071 Tours Cedex 2 (France); Yvon, A.; Collard, E. [STMicroelectronics, 10 rue Thalès de Milet CS 97155, 37071 Tours Cedex 2 (France); Cayrel, F.; Alquier, D. [Université François Rabelais, Tours, GREMAN, CNRS UMR 7347, 10 rue Thalès de Milet CS 97155, 37071 Tours Cedex 2 (France)

2015-11-15

Graphical abstract: Surface state of a crack-free AlN cap-layer reactive sputtered on GaN and annealed at high temperature showing a smooth, pit-free surface. - Highlights: • We deposit a crystalline AlN layer by reactive magnetron sputtering on GaN. • We show the effect of deposition parameters of AlN by reactive magnetron sputtering on the quality of the grown layer. • We demonstrate the efficiency of double cap-layer for GaN protection during high temperature thermal treatments. • We show an efficient selective etch of AlN without damaging GaN surface. - Abstract: Critical issues need to be overcome to produce high performance Schottky diodes on gallium nitride (GaN). To activate dopant, high temperature thermal treatments are required but damage GaN surface where hexagonal pits appear and prevent any device processing. In this paper, we investigated the efficiency of cap-layers on GaN during thermal treatments to avoid degradation. Aluminum nitride (AlN) and silicon oxide (SiO{sub x}) were grown on GaN by direct current reactive magnetron sputtering and plasma-enhanced chemical vapor deposition, respectively. AlN growth parameters were studied to understand their effect on the grown layers and their protection efficiency. Focused ion beam was used to measure AlN layer thickness. Crystalline quality and exact composition were verified using X-ray diffraction and energy dispersive X-ray spectroscopy. Two types of rapid thermal annealing at high temperatures were investigated. Surface roughness and pits density were evaluated using atomic force microscopy and scanning electron microscopy. Cap-layers wet etching was processed in H{sub 3}PO{sub 4} at 120 °C for AlN and in HF (10%) for SiO{sub x}. This work reveals effective protection of GaN during thermal treatments at temperatures as high as 1150 °C. Low surface roughness was obtained. Furthermore, no hexagonal pit was observed on the surface.

SAP-like ultrafine-grained Al composites dispersion strengthened with nanometric AlN

International Nuclear Information System (INIS)

Balog, M.; Krizik, P.; Yan, M.; Simancik, F.; Schaffer, G.B.; Qian, M.

2013-01-01

This paper reports the development of novel Sinter-Aluminum-Pulver (SAP)-like Al–AlN nanocomposites via replacing the native Al 2 O 3 thin films on fine Al powder with a large volume fraction of in situ formed nanometric AlN dispersoids. Fine gas-atomized Al powder (d 50 =1.3 µm) compacts were first partially nitrided at 590 °C in flowing nitrogen, controlled by a small addition of Sn (0.3–0.4 wt%), and subsequently consolidated by hot direct extrusion. The resulting Al–AlN composites consisted of submicrometric Al grains reinforced with nanometric AlN dispersoids together with some nanometric Al 2 O 3 dispersoids. An Al–13 vol% AlN nanocomposite fabricated this way achieved exceptional ultimate tensile strength of 227 MPa, yield strength of 195 MPa and Young's modulus of 66 GPa at 300 °C, superior to typical SAP materials and coarse grained Al–AlN composites. In addition, the Al–13 vol% AlN nanocomposite exhibited good thermal stability up to 500 °C. The strengthening mechanism is discussed

Oxidation behaviour of a Ti{sub 2}AlN MAX-phase coating

Energy Technology Data Exchange (ETDEWEB)

Wang Qimin; Kim, Kwangho [National Core Research Center for Hybrid Materials Solution, Pusan National University, Busan 609-735 (Korea, Republic of); Garkas, W; Renteria, A Flores [Chair of Physical Metallurgy and Materials Technology, Technical University of Brandenburg at Cottbus, 03046 Cottbus (Germany); Leyens, C [Institute of Materials Science, Technical University of Dresden, Helmholtzstrasse 7, 01069 Dresden (Germany); Sun Chao, E-mail: qmwang@pusan.ac.kr, E-mail: kwhokim@pusan.ac.kr [Division of Surface Engineering of Materials, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China)

2011-10-29

In this paper, we reported the oxidation behaviour of Ti{sub 2}AlN coatings on a -TiAl substrate. The coatings composed mainly of Ti{sub 2}AlN MAX phase were obtained by magnetron sputtering and subsequent vacuum annealing. Isothermal oxidation tests at 700-900 deg. C were performed in air. The results indicated that the oxidation resistance of the -TiAl alloy can be improved by depositing a Ti{sub 2}AlN layer on the alloy surface, especially at high temperatures. An Al-rich oxide scale formed on the coating surfaces during oxidation. This scale acts as diffusion barrier blocking the ingress of oxidation, and effectively protects the coated alloys from further oxidation attack.

POLARIZED LINE FORMATION IN NON-MONOTONIC VELOCITY FIELDS

Energy Technology Data Exchange (ETDEWEB)

Sampoorna, M.; Nagendra, K. N., E-mail: sampoorna@iiap.res.in, E-mail: knn@iiap.res.in [Indian Institute of Astrophysics, Koramangala, Bengaluru 560034 (India)

2016-12-10

For a correct interpretation of the observed spectro-polarimetric data from astrophysical objects such as the Sun, it is necessary to solve the polarized line transfer problems taking into account a realistic temperature structure, the dynamical state of the atmosphere, a realistic scattering mechanism (namely, the partial frequency redistribution—PRD), and the magnetic fields. In a recent paper, we studied the effects of monotonic vertical velocity fields on linearly polarized line profiles formed in isothermal atmospheres with and without magnetic fields. However, in general the velocity fields that prevail in dynamical atmospheres of astrophysical objects are non-monotonic. Stellar atmospheres with shocks, multi-component supernova atmospheres, and various kinds of wave motions in solar and stellar atmospheres are examples of non-monotonic velocity fields. Here we present studies on the effect of non-relativistic non-monotonic vertical velocity fields on the linearly polarized line profiles formed in semi-empirical atmospheres. We consider a two-level atom model and PRD scattering mechanism. We solve the polarized transfer equation in the comoving frame (CMF) of the fluid using a polarized accelerated lambda iteration method that has been appropriately modified for the problem at hand. We present numerical tests to validate the CMF method and also discuss the accuracy and numerical instabilities associated with it.

Islanding and strain-induced shifts in the infrared absorption peaks of cubic boron nitride thin films

International Nuclear Information System (INIS)

Fahy, S.; Taylor, C.A. II and; Clarke, R.

1997-01-01

Experimental and theoretical investigations of the infrared-active, polarization-dependent phonon frequencies of cubic boron nitride films have been performed in light of recent claims that large frequency shifts during initial nucleation are the result of strain caused by highly nonequilibrium growth conditions. We show that the formation of small, separate grains of cubic boron nitride during the initial growth leads to a frequency shift in the infrared-active transverse-optic mode, polarized normal to the substrate, which is opposite in sign and twice the magnitude of the shift for modes polarized parallel to the substrate. In contrast, film strain causes a frequency shift in the mode polarized normal to the substrate, which is much smaller in magnitude than the frequency shift for modes polarized parallel to the substrate. Normal and off-normal incidence absorption measurements, performed at different stages of nucleation and growth, show that large frequency shifts in the transverse-optic-phonon modes during the initial stage of growth are not compatible with the expected effects of strain, but are in large part due to nucleation of small isolated cubic BN grains which coalesce to form a uniform layer. Numerical results from a simple model of island nucleation and growth are in good agreement with experimental results. copyright 1997 The American Physical Society

Evaluation of Extraction Protocols for Simultaneous Polar and Non-Polar Yeast Metabolite Analysis Using Multivariate Projection Methods

Directory of Open Access Journals (Sweden)

Nicolas P. Tambellini

2013-07-01

Full Text Available Metabolomic and lipidomic approaches aim to measure metabolites or lipids in the cell. Metabolite extraction is a key step in obtaining useful and reliable data for successful metabolite studies. Significant efforts have been made to identify the optimal extraction protocol for various platforms and biological systems, for both polar and non-polar metabolites. Here we report an approach utilizing chemoinformatics for systematic comparison of protocols to extract both from a single sample of the model yeast organism Saccharomyces cerevisiae. Three chloroform/methanol/water partitioning based extraction protocols found in literature were evaluated for their effectiveness at reproducibly extracting both polar and non-polar metabolites. Fatty acid methyl esters and methoxyamine/trimethylsilyl derivatized aqueous compounds were analyzed by gas chromatography mass spectrometry to evaluate non-polar or polar metabolite analysis. The comparative breadth and amount of recovered metabolites was evaluated using multivariate projection methods. This approach identified an optimal protocol consisting of 64 identified polar metabolites from 105 ion hits and 12 fatty acids recovered, and will potentially attenuate the error and variation associated with combining metabolite profiles from different samples for untargeted analysis with both polar and non-polar analytes. It also confirmed the value of using multivariate projection methods to compare established extraction protocols.

C-axis orientated AlN films deposited using deep oscillation magnetron sputtering

International Nuclear Information System (INIS)

Lin, Jianliang; Chistyakov, Roman

2017-01-01

Highlights: • Highly orientated AlN films were deposited by DOMS technique. • Controlled ion flux bombardment improved the texture and crystalline quality. • Excessive ion bombardment showed a detrimental effect on the c-axis orientation growth. • Improved c-axis alignment accompanied with stress relaxation with increasing film thickness. - Abstract: Highly c-axis orientated aluminum nitride (AlN) films were deposited on silicon (100) substrates by reactive deep oscillation magnetron sputtering (DOMS). No epitaxial favored bond layer and substrate heating were applied for assisting texture growth. The effects of the peak target current density (varied from 0.39 to 0.8 Acm"−"2) and film thickness (varied from 0.25 to 3.3 μm) on the c-axis orientation, microstructure, residual stress and mechanical properties of the AlN films were investigated by means of X-ray diffraction rocking curve methodology, transmission electron microscopy, optical profilometry, and nanoindentation. All AlN films exhibited a preferred orientation and compressive residual stresses. At similar film thicknesses, an increase in the peak target current density to 0.53 Acm"−"2 improved the orientation. Further increasing the peak target current density to above 0.53 Acm"−"2 showed limited contribution to the texture development. The study also showed that an increase in the thickness of the AlN films deposited by DOMS improved the c-axis alignment accompanied with a reduction in the residual stress.

C-axis orientated AlN films deposited using deep oscillation magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Lin, Jianliang, E-mail: Jianliang.lin@swri.org [Southwest Research Institute, San Antonio, TX 78238 (United States); Chistyakov, Roman [Zpulser LLC, Mansfield, MA 02048 (United States)

2017-02-28

Highlights: • Highly <0001> orientated AlN films were deposited by DOMS technique. • Controlled ion flux bombardment improved the <0001> texture and crystalline quality. • Excessive ion bombardment showed a detrimental effect on the c-axis orientation growth. • Improved c-axis alignment accompanied with stress relaxation with increasing film thickness. - Abstract: Highly <0001> c-axis orientated aluminum nitride (AlN) films were deposited on silicon (100) substrates by reactive deep oscillation magnetron sputtering (DOMS). No epitaxial favored bond layer and substrate heating were applied for assisting texture growth. The effects of the peak target current density (varied from 0.39 to 0.8 Acm{sup −2}) and film thickness (varied from 0.25 to 3.3 μm) on the c-axis orientation, microstructure, residual stress and mechanical properties of the AlN films were investigated by means of X-ray diffraction rocking curve methodology, transmission electron microscopy, optical profilometry, and nanoindentation. All AlN films exhibited a <0001> preferred orientation and compressive residual stresses. At similar film thicknesses, an increase in the peak target current density to 0.53 Acm{sup −2} improved the <0001> orientation. Further increasing the peak target current density to above 0.53 Acm{sup −2} showed limited contribution to the texture development. The study also showed that an increase in the thickness of the AlN films deposited by DOMS improved the c-axis alignment accompanied with a reduction in the residual stress.

Non-polar InGaN quantum dot emission with crystal-axis oriented linear polarization

Energy Technology Data Exchange (ETDEWEB)

Reid, Benjamin P. L., E-mail: benjamin.reid@physics.ox.ac.uk; Chan, Christopher C. S.; Taylor, Robert A. [Clarendon Laboratory, Department of Physics, University of Oxford, Oxford OX1 3PU (United Kingdom); Kocher, Claudius [Department of Physics, University of Konstanz, Konstanz 78457 (Germany); Zhu, Tongtong; Oehler, Fabrice; Oliver, Rachel A. [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)

2015-04-27

Polarization sensitive photoluminescence is performed on single non-polar InGaN quantum dots. The studied InGaN quantum dots are found to have linearly polarized emission with a common polarization direction defined by the [0001] crystal axis. Around half of ∼40 studied dots have a polarization degree of 1. For those lines with a polarization degree less than 1, we can resolve fine structure splittings between −800 μeV and +800 μeV, with no clear correlation between fine structure splitting and emission energy.

Enhanced field emission from Si doped nanocrystalline AlN thin films

International Nuclear Information System (INIS)

Thapa, R.; Saha, B.; Chattopadhyay, K.K.

2009-01-01

Si doped and undoped nanocrystalline aluminum nitride thin films were deposited on various substrates by direct current sputtering technique. X-ray diffraction analysis confirmed the formation of phase pure hexagonal aluminum nitride with a single peak corresponding to (1 0 0) reflection of AlN with lattice constants, a = 0.3114 nm and c = 0.4986 nm. Energy dispersive analysis of X-rays confirmed the presence of Si in the doped AlN films. Atomic force microscopic studies showed that the average particle size of the film prepared at substrate temperature 200 deg. C was 9.5 nm, but when 5 at.% Si was incorporated the average particle size increased to ∼21 nm. Field emission study indicated that, with increasing Si doping concentration, the emission characteristics have been improved. The turn-on field (E to ) was 15.0 (±0.7) V/μm, 8.0 (±0.4) V/μm and 7.8 (±0.5) V/μm for undoped, 3 at.% and 5 at.% Si doped AlN films respectively and the maximum current density of 0.27 μA/cm 2 has been observed for 5 at.% Si doped nanocrystalline AlN film. It was also found that the dielectric properties were highly dependent on Si doping.

Valence and conduction band offsets of β-Ga2O3/AlN heterojunction

KAUST Repository

Sun, Haiding

2017-10-16

Both β-Ga2O3 and wurtzite AlN have wide bandgaps of 4.5–4.9 and 6.1 eV, respectively. We calculated the in-plane lattice mismatch between the (−201) plane of β-Ga2O3 and the (0002) plane of AlN, which was found to be 2.4%. This is the smallest mismatch between β-Ga2O3 and binary III-nitrides which is beneficial for the formation of a high quality β-Ga2O3/AlN heterojunction. However, the valence and conduction band offsets (VBO and CBO) at the β-Ga2O3/AlN heterojunction have not yet been identified. In this study, a very thin (less than 2 nm) β-Ga2O3 layer was deposited on an AlN/sapphire template to form the heterojunction by pulsed laser deposition. High-resolution X-ray photoelectron spectroscopy revealed the core-level (CL) binding energies of Ga 3d and Al 2p with respect to the valence band maximum in individual β-Ga2O3 and AlN layers, respectively. The separation between Ga 3d and Al 2p CLs at the β-Ga2O3/AlN interface was also measured. Eventually, the VBO was found to be −0.55 ± 0.05 eV. Consequently, a staggered-gap (type II) heterojunction with a CBO of −1.75 ± 0.05 eV was determined. The identification of the band alignment of the β-Ga2O3/AlN heterojunction could facilitate the design of optical and electronic devices based on these and related alloys.

Non-sky polarization-based dehazing algorithm for non-specular objects using polarization difference and global scene feature.

Science.gov (United States)

Qu, Yufu; Zou, Zhaofan

2017-10-16

Photographic images taken in foggy or hazy weather (hazy images) exhibit poor visibility and detail because of scattering and attenuation of light caused by suspended particles, and therefore, image dehazing has attracted considerable research attention. The current polarization-based dehazing algorithms strongly rely on the presence of a "sky area", and thus, the selection of model parameters is susceptible to external interference of high-brightness objects and strong light sources. In addition, the noise of the restored image is large. In order to solve these problems, we propose a polarization-based dehazing algorithm that does not rely on the sky area ("non-sky"). First, a linear polarizer is used to collect three polarized images. The maximum- and minimum-intensity images are then obtained by calculation, assuming the polarization of light emanating from objects is negligible in most scenarios involving non-specular objects. Subsequently, the polarization difference of the two images is used to determine a sky area and calculate the infinite atmospheric light value. Next, using the global features of the image, and based on the assumption that the airlight and object radiance are irrelevant, the degree of polarization of the airlight (DPA) is calculated by solving for the optimal solution of the correlation coefficient equation between airlight and object radiance; the optimal solution is obtained by setting the right-hand side of the equation to zero. Then, the hazy image is subjected to dehazing. Subsequently, a filtering denoising algorithm, which combines the polarization difference information and block-matching and 3D (BM3D) filtering, is designed to filter the image smoothly. Our experimental results show that the proposed polarization-based dehazing algorithm does not depend on whether the image includes a sky area and does not require complex models. Moreover, the dehazing image except specular object scenarios is superior to those obtained by Tarel

DFT study on the adsorption behavior and electronic response of AlN nanotube and nanocage toward toxic halothane gas

Science.gov (United States)

Mohammadi, R.; Hosseinian, A.; Khosroshahi, E. Saedi; Edjlali, L.; Vessally, E.

2018-04-01

We have investigated the adsorption of a halothane molecule on the AlN nanotube, and nanocage using density functional theory calculations. We predicted that the halothane molecule tends to be physically adsorbed on the surface of AlN nanotube with adsorption energy (Ead) of -4.2 kcal/mol. The electronic properties of AlN nanotube are not affected by the halothane, and it is not a sensor. But the AlN nanocage is more reactive than the AlN nanotube because of its higher curvature. The halothane tends to be adsorbed on a hexagonal ring, an Alsbnd N bond, and a tetragonal ring of the AlN nanocage. The adsorption ability order is as follows: tetragonal ring (Ead = -14.7 kcal/mol) > Alsbnd N bond (Ead = -12.3 kcal/mol) > hexagonal ring (Ead = -10.1 kcal/mol). When a halothane molecule is adsorbed on the AlN nanocage, its electrical conductivity is increased, demonstrating that it can yield an electronic signal at the presence of this molecule, and can be employed in chemical sensors. The AlN nanocage benefits from a short recovery time of about 58 ms at room temperature.

Towards an elastic model of wurtzite AlN nanowires

International Nuclear Information System (INIS)

Mitrushchenkov, A; Chambaud, G; Yvonnet, J; He, Q-C

2010-01-01

Starting with ab initio calculations of AlN wurtzite [0001] nanowires with diameters up to 4 nm, a finite element method is developed to deal with larger nanostructures/nanoparticles. The ab initio calculations show that the structure of the nanowires can be well represented by an internal part with AlN bulk elastic properties, and one atomic surface layer with its own elastic behavior. The proposed finite element method includes surface elements with their own elastic properties using surface elastic coefficients deduced from the ab initio calculations. The elastic properties obtained with the finite element model compare very well with those obtained with the full ab initio calculations.

Memory and Electrical Properties of (100-Oriented AlN Thin Films Prepared by Radio Frequency Magnetron Sputtering

Directory of Open Access Journals (Sweden)

Maw-Shung Lee

2014-01-01

Full Text Available The (100-oriented aluminum nitride (AlN thin films were well deposited onto p-type Si substrate by radio frequency (RF magnetron sputtering method. The optimal deposition parameters were the RF power of 350 W, chamber pressure of 9 mTorr, and nitrogen concentration of 50%. Regarding the physical properties, the microstructure of as-deposited (002- and (100-oriented AlN thin films were obtained and compared by XRD patterns and TEM images. For electrical properties analysis, we found that the memory windows of (100-oriented AlN thin films are better than those of (002-oriented thin films. Besides, the interface and interaction between the silicon and (100-oriented AlN thin films was serious important problem. Finally, the current transport models of the as-deposited and annealed (100-oriented AlN thin films were also discussed. From the results, we suggested and investigated that large memory window of the annealed (100-oriented AlN thin films was induced by many dipoles and large electric field applied.

The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem

Energy Technology Data Exchange (ETDEWEB)

Humphreys, C.J., E-mail: colin.humphreys@msm.cam.ac.uk [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Griffiths, J.T., E-mail: jg641@cam.ac.uk [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Tang, F., E-mail: ft274@cam.ac.uk [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Oehler, F., E-mail: fabrice.oehler@lpn.cnrs.fr [CNRS/C2N, Paris Sud University, Route de Nozay, 91460 Marcoussis (France); Findlay, S.D., E-mail: scott.findlay@monash.edu [School of Physics and Astronomy, Monash University, Victoria 3800 (Australia); Zheng, C., E-mail: changlin.zheng@monash.edu [Monash Centre for Electron Microscopy, Monash University, Victoria 3800 (Australia); Etheridge, J., E-mail: joanne.etheridge@mcem.monash.edu [Department of Materials Science and Engineering, Monash University, Victoria 3800 (Australia); Martin, T.L., E-mail: tomas.martin@materials.ox.ac.uk [Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom); Bagot, P.A.J., E-mail: paul.bagot@materials.ox.ac.uk [Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom); Moody, M.P., E-mail: michael.moody@materials.ox.ac.uk [Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom); Sutherland, D., E-mail: danny.sutherland@manchester.ac.uk [School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL (United Kingdom); Dawson, P., E-mail: philip.dawson@manchester.ac.uk [School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL (United Kingdom); Schulz, S., E-mail: stefan.schulz@tyndall.ie [Tyndall National Institute, Lee Maltings Complex, Dyke Parade, Cork (Ireland); and others

2017-05-15

Highlights: • We have studied the atomic structure of polar and non-polar InGaN quantum wells. • The non-polar (11-20) InGaN quantum wells contain indium-rich clusters, unlike the polar (0001) quantum wells. • The electrons and holes in the quantum wells are localised by different mechanisms. - Abstract: We have used high resolution transmission electron microscopy (HRTEM), aberration-corrected quantitative scanning transmission electron microscopy (Q-STEM), atom probe tomography (APT) and X-ray diffraction (XRD) to study the atomic structure of (0001) polar and (11-20) non-polar InGaN quantum wells (QWs). This paper provides an overview of the results. Polar (0001) InGaN in QWs is a random alloy, with In replacing Ga randomly. The InGaN QWs have atomic height interface steps, resulting in QW width fluctuations. The electrons are localised at the top QW interface by the built-in electric field and the well-width fluctuations, with a localisation energy of typically 20 meV. The holes are localised near the bottom QW interface, by indium fluctuations in the random alloy, with a localisation energy of typically 60 meV. On the other hand, the non-polar (11-20) InGaN QWs contain nanometre-scale indium-rich clusters which we suggest localise the carriers and produce longer wavelength (lower energy) emission than from random alloy non-polar InGaN QWs of the same average composition. The reason for the indium-rich clusters in non-polar (11-20) InGaN QWs is not yet clear, but may be connected to the lower QW growth temperature for the (11-20) InGaN QWs compared to the (0001) polar InGaN QWs.

Quantitative Evaluation of Strain in Epitaxial 2H AlN Layers

International Nuclear Information System (INIS)

Nader, N.; Pezoldt, J.

2011-01-01

To improve the quality of AlN layer deposit on SiC/Si, different Ge amounts (0.25, 0.5, 1, 2ML) were deposited before the carbonization process at the silicon substrate in order to reduce the lattice parameters mismatch between Si and SiC grown layers. The residual stress of the hexagonal AlN layers derives from the phonon frequency shifts of the E1(TO) phonon mode. The crystalline quality of the AlN layer is correlated to and investigated by the full width of the half maximum (FWHM) and the intensity of E1(TO) mode of the 2H-AlN. Best crystalline quality and lower stress value are found in the case where 1ML of Ge amount is predeposited. The E1(TO) mode phonon frequency shifts-down by 3 cm-1/GPa with respect to an unstrained layer. (author)

Non-uniformity calibration for MWIR polarization imagery obtained with integrated microgrid polarimeters

Science.gov (United States)

Liu, Hai-Zheng; Shi, Ze-Lin; Feng, Bin; Hui, Bin; Zhao, Yao-Hong

2016-03-01

Integrating microgrid polarimeters on focal plane array (FPA) of an infrared detector causes non-uniformity of polarization response. In order to reduce the effect of polarization non-uniformity, this paper constructs an experimental setup for capturing raw flat-field images and proposes a procedure for acquiring non-uniform calibration (NUC) matrix and calibrating raw polarization images. The proposed procedure takes the incident radiation as a polarization vector and offers a calibration matrix for each pixel. Both our matrix calibration and two-point calibration are applied to our mid-wavelength infrared (MWIR) polarization imaging system with integrated microgrid polarimeters. Compared with two point calibration, our matrix calibration reduces non-uniformity by 30 40% under condition of flat-field data test with polarization. The ourdoor scene observation experiment indicates that our calibration can effectively reduce polarization non-uniformity and improve the image quality of our MWIR polarization imaging system.

Ab initio study of M2AlN (M = Ti,V,Cr)

International Nuclear Information System (INIS)

Sun, Zhimei; Music, Denis; Ahuja, Rajeev; Schneider, Jochen M

2005-01-01

We have studied M 2 AlN phases, where M = Ti, V, and Cr, by means of ab initio total energy calculations. The bulk modulus of M 2 AlN increases as Ti is replaced with V and Cr by 19.0% and 26.5%, respectively, which can be understood on the basis of the increased number of valence electrons filling the p-d hybridized bonding states. The bulk modulus of M 2 AlN is generally higher than that of the corresponding M 2 AlC phase, which may be explained by an extra electron in the former phases contributing to stronger chemical bonding. This work is important for fundamental understanding of elastic properties of these ternary nitrides and may inspire future experimental research. (letter to the editor)

Cd doping of AlN via ion implantation studied with perturbed angular correlation

CERN Document Server

Kessler, Patrick; Miranda, Sérgio MC; Simon, R; Correia, João Guilherme; Johnston, Karl; Vianden, Reiner

2012-01-01

AlN with a wide bandgap of 6.2 eV is a promising candidate for ultraviolet light-emitting diodes and laser diodes. However, the production of the required p-type AlN is still challenging. As a possible dopant Cd was suggested among other Group II atoms (Be, Mg, and Zn). In this study the annealing condition of implanted Cd in AlN was investigated with the method of the perturbed angular correlation (PAC). Therefore radioactive $^{117}$Cd or $^{111m}$Cd ions were implanted into thin AlN films on sapphire substrate with an energy of 30 keV and fluences in the range of 10$^{11}$ ions/cm$^{2}$. After thorough annealing with a proximity cap of the same material most of the Cd-probes occupy substitutional lattice sites and almost all implantation damage can be annealed. This results in a distinct frequency in the PAC spectra which increases with temperature. In contrast to the formation of an indium nitrogen-vacancy complex observed with the probe $^{111}$In on substitutional Al-sites no defects are bound to substi...

NMR-Based Identification of Metabolites in Polar and Non-Polar Extracts of Avian Liver.

Science.gov (United States)

Fathi, Fariba; Brun, Antonio; Rott, Katherine H; Falco Cobra, Paulo; Tonelli, Marco; Eghbalnia, Hamid R; Caviedes-Vidal, Enrique; Karasov, William H; Markley, John L

2017-11-16

Metabolites present in liver provide important clues regarding the physiological state of an organism. The aim of this work was to evaluate a protocol for high-throughput NMR-based analysis of polar and non-polar metabolites from a small quantity of liver tissue. We extracted the tissue with a methanol/chloroform/water mixture and isolated the polar metabolites from the methanol/water layer and the non-polar metabolites from the chloroform layer. Following drying, we re-solubilized the fractions for analysis with a 600 MHz NMR spectrometer equipped with a 1.7 mm cryogenic probe. In order to evaluate the feasibility of this protocol for metabolomics studies, we analyzed the metabolic profile of livers from house sparrow ( Passer domesticus ) nestlings raised on two different diets: livers from 10 nestlings raised on a high protein diet (HP) for 4 d and livers from 12 nestlings raised on the HP diet for 3 d and then switched to a high carbohydrate diet (HC) for 1 d. The protocol enabled the detection of 52 polar and nine non-polar metabolites in ¹H NMR spectra of the extracts. We analyzed the lipophilic metabolites by one-way ANOVA to assess statistically significant concentration differences between the two groups. The results of our studies demonstrate that the protocol described here can be exploited for high-throughput screening of small quantities of liver tissue (approx. 100 mg wet mass) obtainable from small animals.

Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma

International Nuclear Information System (INIS)

Goerke, Sebastian; Ziegler, Mario; Ihring, Andreas; Dellith, Jan; Undisz, Andreas; Diegel, Marco; Anders, Solveig; Huebner, Uwe; Rettenmayr, Markus; Meyer, Hans-Georg

2015-01-01

Highlights: • AlN films grown at 150 °C by ALD using trimethylaluminum and H 2 /N 2 -plasma. • Nearly stoichiometric AlN films (ratio Al:N = 0.938), polycrystalline by XRD/TEM. • Refractive index of n = 1.908 and low thermal conductivity of κ = 1.66 W/(m K). • Free-standing AlN membranes mechanically stable and buckling free (tensile strain). • Membrane patterning by focused ion beam etching possible. - Abstract: Aluminum nitride (AlN) thin films with thicknesses from 20 to 100 nm were deposited on silicon, amorphous silica, silicon nitride, and vitreous carbon by plasma enhanced atomic layer deposition (PE-ALD). Trimethylaluminum (TMA) and a H 2 /N 2 plasma mixture were used as precursors. We investigated the influence of deposition temperature and plasma parameters on the growth characteristics and the film properties of AlN. Stable PE-ALD growth conditions were obtained from 150 °C to the highest tested temperature of 300 °C. The growth rate, refractive index, and thickness homogeneity on 4″ wafers were determined by spectroscopic ellipsometry. X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM) and Rutherford backscattering spectrometry (RBS) were carried out to analyze crystallinity and composition of the films. Furthermore, the thermal conductivity and the film stress were determined. The stress was sufficiently low to fabricate mechanically stable free-standing AlN membranes with lateral dimensions of up to 2.2 × 2.2 mm 2 . The membranes were patterned with focused ion beam etching. Thus, these AlN membranes qualify as dielectric support material for a variety of potential applications

A computational study on the electronic and field emission properties of Mg and Si doped AlN nanocones

Science.gov (United States)

Saedi, Leila; Soleymanabadi, Hamed; Panahyab, Ataollah

2018-05-01

Following an experimental work, we explored the effect of replacing an Al atom of an AlN nanocone by Si or Mg atom on its electronic and field emission properties using density functional theory calculations. We found that both Si-doping and Mg-doping increase the electrical conductivity of AlN nanocone, but their influences on the filed emission properties are significantly different. The Si-doping increases the electron concentration of AlN nanocone and results in a large electron mobility and a low work function, whereas Mg-doping leads to a high hole concentration below the conduction level and increases the work function in agreement with the experimental results. It is predicted that Si-doped AlN nanocones show excellent filed emission performance with higher emitted electron current density compared to the pristine AlN nanocone. But the Mg-doping meaningfully decreases the emitted electron current density from the surface of AlN nanocone. The Mg-doping can increase the work function about 41.9% and the Si-doping can decrease it about 6.3%. The Mg-doping and Si-doping convert the AlN nanocone to a p-type and n-type semiconductors, respectively. Our results explain in a molecular level what observed in the experiment.

Respiration and Heartbeat Measurement for Sleep Monitoring Using a Flexible AlN Piezoelectric Film Sensor

Directory of Open Access Journals (Sweden)

Nan BU

2009-11-01

Full Text Available Respiratory and heartbeat monitoring during sleep provides basic physiological information for diagnosis of sleep disorders. This paper proposes a new method for non-invasive and unconstrained measurement of respiration and heartbeat during sleep. A flexible piezoelectric film sensor made of aluminum nitride (AlN material is used for signal acquisition. The total thickness of this sensor is less than 40 μm; the thin thickness makes it imperceptible when integrated into a bed. In addition, the AlN film sensor has good sensitivity, so that pressure fluctuation due to respiration and heartbeat can be measured when a subject is lying on this sensor. The pressure fluctuation measured can be further separated into signals corresponding to respiration and heartbeat, respectively. In the proposed method, the signal separation is achieved using an algorithm based on empirical mode decomposition (EMD. From the experimental results, it was found that respiration and heartbeat signals can be successfully obtained with the proposed method.

Non-isothermal decomposition kinetics, heat capacity and thermal safety of 37.2/44/16/2.2/0.2/0.4-GAP/CL-20/Al/N-100/PCA/auxiliaries mixture

International Nuclear Information System (INIS)

Zhang, Jiao-Qiang; Gao, Hong-Xu; Ji, Tie-Zheng; Xu, Kang-Zhen; Hu, Rong-Zu

2011-01-01

Highlights: → Non-isothermal decomposition kinetics, heat capacity and thermal safety on 37.2/44/16/2.2/0.2/0.4-GAP/CL-20/Al/N-100/PCA/auxiliaries mixture. → Apparent activation energy and pre-exponential constant obtained. → Thermal explosion temperature, adiabatic time-to-explosion, 50% drop height of impact sensitivity, and critical temperature of hot-spot initiation calculated. - Abstract: The specific heat capacity (C p ) of 37.2/44/16/2.2/0.2/0.4-GAP/CL-20/Al/N-100/PCA/auxiliaries mixture was determined with the continuous C p mode of microcalorimeter. The equation of C p with temperature was obtained. The standard molar heat capacity of GAP/CL-20/Al/N-100/PCA/auxiliaries mixture was 1.225 J mol -1 K -1 at 298.15 K. With the help of the peak temperature (T p ) from the non-isothermal DTG curves of the mixture at different heating rates (β), the apparent activation energy (E k and E o ) and pre-exponential constant (A K ) of thermal decomposition reaction obtained by Kissinger's method and Ozawa's method. Using density (ρ) and thermal conductivity (λ), the decomposition heat (Q d , taking half-explosion heat), Zhang-Hu-Xie-Li's formula, the values (T e0 and T p0 ) of T e and T p corresponding to β → 0, thermal explosion temperature (T be and T bp ), adiabatic time-to-explosion (t TIad ), 50% drop height (H 50 ) of impact sensitivity, and critical temperature of hot-spot initiation (T cr,hotspot ) of thermal explosion of the mixture were calculated. The following results of evaluating the thermal safety of the mixture were obtained: T be = 441.64 K, T bp = 461.66 K, t Tlad = 78.0 s (n = 2), t Tlad = 74.87s (n = 1), t Tlad = 71.85 s (n = 0), H 50 = 21.33 cm.

Point Defect Identification and Management for Sub-300 nm Light Emitting Diodes and Laser Diodes Grown on Bulk AlN Substrates

Science.gov (United States)

Bryan, Zachary A.

defects in the films due to the increase in their formation energies during growth. This method improved the electrical properties of p-type GaN and n-type AlGaN and reduced stress thereby preventing films from cracking. The optical and structural quality of high Al-content AlGaN multiple quantum wells, light emitting diodes (LEDs), and laser diodes (LDs) grown on single crystalline AlN substrates are investigated. The use of bulk AlN substrates enabled the undoubtable distinction between the effect of growth conditions, such as V/III ratio, on the optical quality from the influence of dislocations. At a high V/III ratio and the proper MQW design, a record high IQE of 80% at a carrier density of 1018 cm-3 is achieved at 258 nm. With these structures, true sub-300 nm lasing is realized and distinguished from super luminescence for the first time by the observations of lasing characteristics such as longitudinal cavity modes, 100% polarized emission, and an elliptically shaped far-field pattern. A transverse electric to transverse magnetic polarization crossover at 245 nm is found. Lasing is observed in both asymmetric and symmetric waveguide structures with and without the presence of Si- and Mg-doping in the waveguide layer. The lowest measurable lasing threshold is 50 kW/cm2 and potentially a lower threshold is obtained in a symmetric waveguide structure while the lowest measured lasing wavelength is 237 nm. Gain measurements reveal a net modal gain greater than 100 cm-1 which is the highest reported value for sub-300 nm lasers. Furthermore, a lowest reported FWHM of 0.012 nm is observed indicating the high quality of the laser structure. Finally, electrically injected LED and LD structures are studied showing great potential for the realization of the first sub-300 nm LD.

The role of Si as surfactant and donor in molecular-beam epitaxy of AlN

International Nuclear Information System (INIS)

Lebedev, V.; Morales, F.M.; Romanus, H.; Krischok, S.; Ecke, G.; Cimalla, V.; Himmerlich, M.; Stauden, T.; Cengher, D.; Ambacher, O.

2005-01-01

The growth of Si-doped AlN(0001) thin films on Al 2 O 3 (0001) substrates by plasma-induced molecular-beam epitaxy is reported. We have found that Si positively affects the epitaxy being an effective surfactant for AlN growth with a remarkable impact on the crystal quality. It was proven that the characteristic surface reconstruction sequences frequently related to the Al adatoms are obviously Si induced on AlN(0001) surfaces. It was also observed that heavy doping conditions result in volume segregation of Si on the threading dislocation network and in the formation of an amorphous (AlO)(SiO)N cap layer caused by surface oxidation of the accumulated Al and segregated Si. The electron affinity was measured to be smaller than 0.5 eV on the clean AlN surface after removing of the cap layer using Ar + sputtering

Investigation of different mechanisms of GaN growth induced on AlN and GaN nucleation layers

International Nuclear Information System (INIS)

Tasco, V.; Campa, A.; Tarantini, I.; Passaseo, A.; Gonzalez-Posada, F.; Munoz, E.; Redondo-Cubero, A.; Lorenz, K.; Franco, N.

2009-01-01

The evolution of GaN growth on AlN and GaN nucleation layers is compared through morphological and structural analyses, including ion beam analysis. By using AlN nucleation layer grown at high temperature, improved crystalline quality is exhibited by 300 nm thin GaN epilayers. GaN (002) x-ray rocking curve as narrow as 168 arc sec and atomic-step surface morphology characterize such a thin GaN film on AlN. Defects are strongly confined into the first 50 nm of growth, whereas a fast laterally coherent growth is observed when increasing thickness, as an effect of high temperature AlN surface morphology and Ga adatom dynamics over this template

Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells

International Nuclear Information System (INIS)

Davies, M. J.; Dawson, P.; Hammersley, S.; Zhu, T.; Kappers, M. J.; Humphreys, C. J.; Oliver, R. A.

2016-01-01

We report on a comparative study of efficiency droop in polar and non-polar InGaN quantum well structures at T = 10 K. To ensure that the experiments were carried out with identical carrier densities for any particular excitation power density, we used laser pulses of duration ∼100 fs at a repetition rate of 400 kHz. For both types of structures, efficiency droop was observed to occur for carrier densities of above 7 × 10 11  cm −2  pulse −1 per quantum well; also both structures exhibited similar spectral broadening in the droop regime. These results show that efficiency droop is intrinsic in InGaN quantum wells, whether polar or non-polar, and is a function, specifically, of carrier density.

Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells

Energy Technology Data Exchange (ETDEWEB)

Davies, M. J.; Dawson, P.; Hammersley, S. [School of Physics and Astronomy, Photon Science Institute, University of Manchester, M13 9PL Manchester (United Kingdom); Zhu, T.; Kappers, M. J.; Humphreys, C. J.; Oliver, R. A. [Department of Material Science and Metallurgy, 27 Charles Babbage Road, University of Cambridge, Cambridge CB3 0FS (United Kingdom)

2016-06-20

We report on a comparative study of efficiency droop in polar and non-polar InGaN quantum well structures at T = 10 K. To ensure that the experiments were carried out with identical carrier densities for any particular excitation power density, we used laser pulses of duration ∼100 fs at a repetition rate of 400 kHz. For both types of structures, efficiency droop was observed to occur for carrier densities of above 7 × 10{sup 11 }cm{sup −2 }pulse{sup −1} per quantum well; also both structures exhibited similar spectral broadening in the droop regime. These results show that efficiency droop is intrinsic in InGaN quantum wells, whether polar or non-polar, and is a function, specifically, of carrier density.

Design technique for all-dielectric non-polarizing beam splitter plate

Science.gov (United States)

Rizea, A.

2012-03-01

There are many situations when, for the proper working, an opto-electronic device requiring optical components does not change the polarization state of light after a reflection, splitting or filtering. In this paper, a design for a non-polarizing beam splitter plate is proposed. Based on certain optical properties of homogeneous dielectric materials we will establish a reliable thin film package formula, excellent for the start of optimization to obtain a 20-nm bandwidth non-polarizing beam splitter.

Using Mosaicity to Tune Thermal Transport in Polycrystalline AlN Thin Films

KAUST Repository

Singh, Shivkant

2018-05-17

The effect of controlling the c-axis alignment (mosaicity) to the cross-plane thermal transport in textured polycrystalline aluminum nitride (AlN) thin films is experimentally and theoretically investigated. We show that by controlling the sputtering conditions we are able to deposit AlN thin films with varying c-axis grain tilt (mosaicity) from 10° to 0°. Microstructural characterization shows that the films are nearly identical in thickness and grain size, and the difference in mosaicity alters the grain interface quality. This has a significant effect to thermal transport where a thermal conductivity of 4.22 W/mK vs. 8.09 W/mK are measured for samples with tilt angles of 10° vs. 0° respectively. The modified Callaway model was used to fit the theoretical curves to the experimental results using various phonon scattering mechanisms at the grain interface. It was found that using a non-gray model gives an overview of the phonon scattering at the grain boundaries, whereas treating the grain boundary as an array of dislocation lines with varying angle relative to the heat flow, best describes the mechanism of the thermal transport. Lastly, our results show that controlling the quality of the grain interface provides a tuning knob to control thermal transport in polycrystalline materials.

Using Mosaicity to Tune Thermal Transport in Polycrystalline AlN Thin Films

KAUST Repository

Singh, Shivkant; Shervin, Shahab; Sun, Haiding; Yarali, Milad; Chen, Jie; Lin, Ronghui; Li, Kuang-Hui; Li, Xiaohang; Ryou, Jae-Hyun; Mavrokefalos, Anastassios

2018-01-01

The effect of controlling the c-axis alignment (mosaicity) to the cross-plane thermal transport in textured polycrystalline aluminum nitride (AlN) thin films is experimentally and theoretically investigated. We show that by controlling the sputtering conditions we are able to deposit AlN thin films with varying c-axis grain tilt (mosaicity) from 10° to 0°. Microstructural characterization shows that the films are nearly identical in thickness and grain size, and the difference in mosaicity alters the grain interface quality. This has a significant effect to thermal transport where a thermal conductivity of 4.22 W/mK vs. 8.09 W/mK are measured for samples with tilt angles of 10° vs. 0° respectively. The modified Callaway model was used to fit the theoretical curves to the experimental results using various phonon scattering mechanisms at the grain interface. It was found that using a non-gray model gives an overview of the phonon scattering at the grain boundaries, whereas treating the grain boundary as an array of dislocation lines with varying angle relative to the heat flow, best describes the mechanism of the thermal transport. Lastly, our results show that controlling the quality of the grain interface provides a tuning knob to control thermal transport in polycrystalline materials.

Valence and conduction band offsets of β-Ga2O3/AlN heterojunction

KAUST Repository

Sun, Haiding; Torres Castanedo, C. G.; Liu, Kaikai; Li, Kuang-Hui; Guo, Wenzhe; Lin, Ronghui; Liu, Xinwei; Li, Jingtao; Li, Xiaohang

2017-01-01

Both β-Ga2O3 and wurtzite AlN have wide bandgaps of 4.5–4.9 and 6.1 eV, respectively. We calculated the in-plane lattice mismatch between the (−201) plane of β-Ga2O3 and the (0002) plane of AlN, which was found to be 2.4%. This is the smallest

Brazing of AlN to SiC by a Pr silicide: Physicochemical aspects

Energy Technology Data Exchange (ETDEWEB)

Koltsov, A. [SIMAP - UMR CNRS 5266, INP Grenoble-UJF, Domaine Universitaire, BP 75, 1130 rue de la Piscine, 38402 Saint Martin d' Heres, Cedex (France)], E-mail: alexey.koltsov@arcelor.com; Hodaj, F.; Eustathopoulos, N. [SIMAP - UMR CNRS 5266, INP Grenoble-UJF, Domaine Universitaire, BP 75, 1130 rue de la Piscine, 38402 Saint Martin d' Heres, Cedex (France)

2008-11-15

In view of their very different thermomechanical properties, joining of metals to ceramics by brazing is usually performed by means of one or more interlayers. In a recent investigation AlN was chosen as interlayer material for brazing SiC to a superalloy. The aim of the present study is to determine an alloy with a high melting point (close to 1200 deg. C) enabling brazing of AlN to SiC. Two types of experiments are performed with a Si-17 at.% Pr eutectic alloy (T{sub m} = 1212 deg. C): sessile drop experiments to determine wetting and brazing of AlN and SiC plates to determine gap filling. Experiments are carried out in high vacuum to promote deoxidation. Interfacial reactivity, joint microstructure and type of failure occurring during cooling are examined by optical and scanning electron microscopy.

Brazing of AlN to SiC by a Pr silicide: Physicochemical aspects

International Nuclear Information System (INIS)

Koltsov, A.; Hodaj, F.; Eustathopoulos, N.

2008-01-01

In view of their very different thermomechanical properties, joining of metals to ceramics by brazing is usually performed by means of one or more interlayers. In a recent investigation AlN was chosen as interlayer material for brazing SiC to a superalloy. The aim of the present study is to determine an alloy with a high melting point (close to 1200 deg. C) enabling brazing of AlN to SiC. Two types of experiments are performed with a Si-17 at.% Pr eutectic alloy (T m = 1212 deg. C): sessile drop experiments to determine wetting and brazing of AlN and SiC plates to determine gap filling. Experiments are carried out in high vacuum to promote deoxidation. Interfacial reactivity, joint microstructure and type of failure occurring during cooling are examined by optical and scanning electron microscopy

Deformation of the cubic open string field theory

Energy Technology Data Exchange (ETDEWEB)

Lee, Taejin, E-mail: taejin@kangwon.ac.kr

2017-05-10

We study a consistent deformation of the cubic open bosonic string theory in such a way that the non-planar world sheet diagrams of the perturbative string theory are mapped onto their equivalent planar diagrams of the light-cone string field theory with some length parameters fixed. An explicit evaluation of the cubic string vertex in the zero-slope limit yields the correct relationship between the string coupling constant and the Yang–Mills coupling constant. The deformed cubic open string field theory is shown to produce the non-Abelian Yang–Mills action in the zero-slope limit if it is defined on multiple D-branes. Applying the consistent deformation systematically to multi-string world sheet diagrams, we may be able to calculate scattering amplitudes with an arbitrary number of external open strings.

Deformation of the cubic open string field theory

International Nuclear Information System (INIS)

Lee, Taejin

2017-01-01

We study a consistent deformation of the cubic open bosonic string theory in such a way that the non-planar world sheet diagrams of the perturbative string theory are mapped onto their equivalent planar diagrams of the light-cone string field theory with some length parameters fixed. An explicit evaluation of the cubic string vertex in the zero-slope limit yields the correct relationship between the string coupling constant and the Yang–Mills coupling constant. The deformed cubic open string field theory is shown to produce the non-Abelian Yang–Mills action in the zero-slope limit if it is defined on multiple D-branes. Applying the consistent deformation systematically to multi-string world sheet diagrams, we may be able to calculate scattering amplitudes with an arbitrary number of external open strings.

Deformation of the cubic open string field theory

Directory of Open Access Journals (Sweden)

Taejin Lee

2017-05-01

Full Text Available We study a consistent deformation of the cubic open bosonic string theory in such a way that the non-planar world sheet diagrams of the perturbative string theory are mapped onto their equivalent planar diagrams of the light-cone string field theory with some length parameters fixed. An explicit evaluation of the cubic string vertex in the zero-slope limit yields the correct relationship between the string coupling constant and the Yang–Mills coupling constant. The deformed cubic open string field theory is shown to produce the non-Abelian Yang–Mills action in the zero-slope limit if it is defined on multiple D-branes. Applying the consistent deformation systematically to multi-string world sheet diagrams, we may be able to calculate scattering amplitudes with an arbitrary number of external open strings.

Generalized Born-Infeld actions and projective cubic curves

Energy Technology Data Exchange (ETDEWEB)

Ferrara, S. [Department of Physics, CERN Theory Division, CH - 1211 Geneva 23 (Switzerland); INFN - Laboratori Nazionali di Frascati, Via Enrico Fermi 40, I-00044, Frascati (Italy); Porrati, M. [CCPP, Department of Physics, NYU, 4 Washington Pl., New York, NY, 10003 (United States); Sagnotti, A. [Department of Physics, CERN Theory Division, CH - 1211 Geneva 23 (Switzerland); Stora, R. [Department of Physics, CERN Theory Division, CH - 1211 Geneva 23 (Switzerland); Laboratoire d' Annecy-le-Vieux de Physique Theorique (LAPTH), F-74941, Annecy-le-Vieux, Cedex (France); Yeranyan, A. [INFN - Laboratori Nazionali di Frascati, Via Enrico Fermi 40, I-00044, Frascati (Italy); Centro Studi e Ricerche Enrico Fermi, Via Panisperna 89A, 00184, Roma (Italy)

2015-04-01

We investigate U(1){sup n} supersymmetric Born-Infeld Lagrangians with a second non-linearly realized supersymmetry. The resulting non-linear structure is more complex than the square root present in the standard Born-Infeld action, and nonetheless the quadratic constraints determining these models can be solved exactly in all cases containing three vector multiplets. The corresponding models are classified by cubic holomorphic prepotentials. Their symmetry structures are associated to projective cubic varieties. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Crystallinity and superconductivity of as-grown MgB2 thin films with AlN buffer layers

International Nuclear Information System (INIS)

Tsujimoto, K.; Shimakage, H.; Wang, Z.; Kaya, N.

2005-01-01

The effects of aluminum nitride (AlN) buffer layers on the superconducting properties of MgB 2 thin film were investigated. The AlN buffer layers and as-grown MgB 2 thin films were deposited in situ using the multiple-target sputtering system. The best depositing condition for the AlN/MgB 2 bi-layer occurred when the AlN was deposited on c-cut sapphire substrates at 290 deg. C. The crystallinity of the AlN/MgB 2 bi-layer was studied using the XRD φ-scan and it showed that AlN and MgB 2 had the same in-plane alignment rotated at an angle of 30 deg. as compared to c-cut sapphire. The critical temperature of the MgB 2 film was 29.8 K and the resistivity was 50.0 μΩ cm at 40 K

Reservoir simulation with the cubic plus (cross-) association equation of state for water, CO2, hydrocarbons, and tracers

Science.gov (United States)

Moortgat, Joachim

2018-04-01

This work presents an efficient reservoir simulation framework for multicomponent, multiphase, compressible flow, based on the cubic-plus-association (CPA) equation of state (EOS). CPA is an accurate EOS for mixtures that contain non-polar hydrocarbons, self-associating polar water, and cross-associating molecules like methane, ethane, unsaturated hydrocarbons, CO2, and H2S. While CPA is accurate, its mathematical formulation is highly non-linear, resulting in excessive computational costs that have made the EOS unfeasible for large scale reservoir simulations. This work presents algorithms that overcome these bottlenecks and achieve an efficiency comparable to the much simpler cubic EOS approach. The main applications that require such accurate phase behavior modeling are 1) the study of methane leakage from high-pressure production wells and its potential impact on groundwater resources, 2) modeling of geological CO2 sequestration in brine aquifers when one is interested in more than the CO2 and H2O components, e.g. methane, other light hydrocarbons, and various tracers, and 3) enhanced oil recovery by CO2 injection in reservoirs that have previously been waterflooded or contain connate water. We present numerical examples of all those scenarios, extensive validation of the CPA EOS with experimental data, and analyses of the efficiency of our proposed numerical schemes. The accuracy, efficiency, and robustness of the presented phase split computations pave the way to more widespread adoption of CPA in reservoir simulators.

Microstructure and mechanical properties of stress-tailored piezoelectric AlN thin films for electro-acoustic devices

Energy Technology Data Exchange (ETDEWEB)

Reusch, Markus, E-mail: markus.reusch@iaf.fraunhofer.de [Laboratory for Compound Semiconductor Microsystems, IMTEK - Department of Microsystems Engineering, University of Freiburg, Georges-Koehler-Allee 103, 79110 Freiburg (Germany); Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg (Germany); Cherneva, Sabina [Institute of Mechanics, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 4, 1113 Sofia (Bulgaria); Lu, Yuan; Žukauskaitė, Agnė; Kirste, Lutz; Holc, Katarzyna [Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg (Germany); Datcheva, Maria [Institute of Mechanics, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 4, 1113 Sofia (Bulgaria); Stoychev, Dimitar [Institute of Physical Chemistry, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 11, 1113 Sofia (Bulgaria); Lebedev, Vadim [Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg (Germany); Ambacher, Oliver [Laboratory for Compound Semiconductor Microsystems, IMTEK - Department of Microsystems Engineering, University of Freiburg, Georges-Koehler-Allee 103, 79110 Freiburg (Germany); Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg (Germany)

2017-06-15

Highlights: • Sputtered AlN thin films with minimized intrinsic stress gradient. • Gradual increase of N{sub 2} concentration during film growth. • No degradation of AlN film properties by changing process conditions. • 2D Raman mapping of nanoindentation area. - Abstract: Nanoindentation measurements along with atomic force microscopy, X-ray diffraction, and residual stress analyses on the basis of Raman measurements have been performed to characterize stress-tailored AlN thin films grown using reactive RF magnetron sputtering. The intrinsic stress gradient caused by the growing in-plane grain size along film thickness was minimized by increasing the N{sub 2} concentration in the Ar/N{sub 2} gas mixture during the growth process. The increase of N{sub 2} concentration did not degrade the device-relevant material properties such as crystallographic orientation, surface morphology, piezoelectric response, or indentation modulus. Due to comparable crystallographic film properties for all investigated samples it was concluded that mainly the AlN crystallites contribute to the mechanical film properties such as indentation modulus and hardness, while the film stress or grain boundaries had only a minor influence. Therefore, by tailoring the stress gradient in the AlN films, device performance, fabrication yield, and the design flexibility of electro-acoustic devices can be greatly improved.

Growth of AlN films and their characterization

Energy Technology Data Exchange (ETDEWEB)

Jain, Rakesh B.; Gao, Ying; Zhang, Jianping; Qhaleed Fareed, R.S.; Gaska, Remis [Sensor Electronic Technology, Inc., 1195 Atlas Rd., Columbia, SC 29209 (United States); Li, Jiawei; Arjunan, Arulchakkravarthi; Yang, Jinwei; Asif Khan, M. [Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208 (United States); Kuokstis, Edmundas [MTMI, Vilnius University, Vilnius (Lithuania)

2006-06-15

Single crystal AlN layers have been produced by migration enhanced metal organic chemical vapor deposition (MEMOCVD), hydride vapor phase epitaxy (HVPE) and their combination. The growth was carried out on 2'' basal plane sapphire substrates. In MEMOCVD, the duration and waveforms of precursors were varied to achieve better surface mobility and thus better atomic incorporation. It resulted in superior layer quality templates with the narrowest (002) X-ray rocking curve full width half maximum (FWHM). Such high quality AlN templates were used as seeds for subsequent HVPE growth. Thick films with thickness ranging from 1-25 {mu}m have been grown by HVPE with growth rates as high as 200 {mu}m/min, highest ever reported. Films grown by the two methods have been extensively characterized by Nomarski microscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM), high-resolution X-ray diffractometry (HRXRD), and photoluminescence (PL). (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Anisotropy of the nitrogen conduction states in the group III nitrides studied by polarized x-ray absorption

Energy Technology Data Exchange (ETDEWEB)

Lawniczak-Jablonska, K. [Lawrence Berkeley National Lab., CA (United States)]|[Institute of Physics, Warsaw (Poland); Liliental-Weber, Z.; Gullikson, E.M. [Lawrence Berkeley National Lab., CA (United States)] [and others

1997-04-01

Group III nitrides (AlN, GaN, and InN) consist of the semiconductors which appear recently as a basic materials for optoelectronic devices active in the visible/ultraviolet spectrum as well as high-temperature and high-power microelectronic devices. However, understanding of the basic physical properties leading to application is still not satisfactory. One of the reasons consists in unsufficient knowledge of the band structure of the considered semiconductors. Several theoretical studies of III-nitrides band structure have been published but relatively few experimental studies have been carried out, particularly with respect to their conduction band structure. This motivated the authors to examine the conduction band structure projected onto p-states of the nitrogen atoms for AlN, GaN and InN. An additional advantage of their studies is the availability of the studied nitrides in two structures, hexagonal (wurtzite) and cubic (zincblende). This offers an opportunity to gain information about the role of the anisotropy of electronic band states in determining various physical properties.

Anisotropy of the nitrogen conduction states in the group III nitrides studied by polarized x-ray absorption

International Nuclear Information System (INIS)

Lawniczak-Jablonska, K.; Liliental-Weber, Z.; Gullikson, E.M.

1997-01-01

Group III nitrides (AlN, GaN, and InN) consist of the semiconductors which appear recently as a basic materials for optoelectronic devices active in the visible/ultraviolet spectrum as well as high-temperature and high-power microelectronic devices. However, understanding of the basic physical properties leading to application is still not satisfactory. One of the reasons consists in unsufficient knowledge of the band structure of the considered semiconductors. Several theoretical studies of III-nitrides band structure have been published but relatively few experimental studies have been carried out, particularly with respect to their conduction band structure. This motivated the authors to examine the conduction band structure projected onto p-states of the nitrogen atoms for AlN, GaN and InN. An additional advantage of their studies is the availability of the studied nitrides in two structures, hexagonal (wurtzite) and cubic (zincblende). This offers an opportunity to gain information about the role of the anisotropy of electronic band states in determining various physical properties

Reduction of the Mg acceptor activation energy in GaN, AlN, Al0.83Ga0.17N and MgGa δ-doping (AlN)5/(GaN)1: the strain effect

Science.gov (United States)

Jiang, Xin-He; Shi, Jun-Jie; Zhang, Min; Zhong, Hong-Xia; Huang, Pu; Ding, Yi-Min; He, Ying-Ping; Cao, Xiong

2015-12-01

To resolve the p-type doping problem of Al-rich AlGaN alloys, we investigate the influence of biaxial and hydrostatic strains on the activation energy, formation energy and band gap of Mg-doped GaN, AlN, Al0.83Ga0.17N disorder alloy and (AlN)5/(GaN)1 superlattice based on first-principles calculations by combining the standard DFT and hybrid functional. We find that the Mg acceptor activation energy {{E}\\text{A}} , the formation energy {{E}\\text{f}} and the band gap {{E}\\text{g}} decrease with increasing the strain ɛ. The hydrostatic strain has a more remarkable impact on {{E}\\text{g}} and {{E}\\text{A}} than the biaxial strain. Both {{E}\\text{A}} and {{E}\\text{g}} have a linear dependence on the hydrostatic strain. For the biaxial strain, {{E}\\text{g}} shows a parabolic dependence on ɛ if \\varepsilon ≤slant 0 while it becomes linear if \\varepsilon ≥slant 0 . In GaN and (AlN)5/(GaN)1, {{E}\\text{A}} parabolically depends on the biaxial compressive strain and linearly depends on the biaxial tensible strain. However, the dependence is approximately linear over the whole biaxial strain range in AlN and Al0.83Ga0.17N. The Mg acceptor activation energy in (AlN)5/(GaN)1 can be reduced from 0.26 eV without strain to 0.16 (0.22) eV with the hydrostatic (biaxial) tensible strain 3%.

AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique.

Science.gov (United States)

Liu, Xiao-Yong; Zhao, Sheng-Xun; Zhang, Lin-Qing; Huang, Hong-Fan; Shi, Jin-Shan; Zhang, Chun-Min; Lu, Hong-Liang; Wang, Peng-Fei; Zhang, David Wei

2015-01-01

Recently, AlN plasma-enhanced atomic layer deposition (ALD) passivation technique had been proposed and investigated for suppressing the dynamic on-resistance degradation behavior of high-electron-mobility transistors (HEMTs). In this paper, a novel gate dielectric and passivation technique for GaN-on-Si AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) is presented. This technique features the AlN thin film grown by thermal ALD at 400°C without plasma enhancement. A 10.6-nm AlN thin film was grown upon the surface of the HEMT serving as the gate dielectric under the gate electrode and as the passivation layer in the access region at the same time. The MISHEMTs with thermal ALD AlN exhibit enhanced on/off ratio, reduced channel sheet resistance, reduction of gate leakage by three orders of magnitude at a bias of 4 V, reduced threshold voltage hysteresis of 60 mV, and suppressed current collapse degradation.

Improved performance of GaN based light emitting diodes with ex-situ sputtered AlN nucleation layers

Directory of Open Access Journals (Sweden)

Shuo-Wei Chen

2016-04-01

Full Text Available The crystal quality, electrical and optical properties of GaN based light emitting diodes (LEDs with ex-situ sputtered physical vapor deposition (PVD aluminum nitride (AlN nucleation layers were investigated. It was found that the crystal quality in terms of defect density and x-ray diffraction linewidth was greatly improved in comparison to LEDs with in-situ low temperature GaN nucleation layer. The light output power was 3.7% increased and the reverse bias voltage of leakage current was twice on LEDs with ex-situ PVD AlN nucleation layers. However, larger compressive strain was discovered in LEDs with ex-situ PVD AlN nucleation layers. The study shows the potential and constrain in applying ex-situ PVD AlN nucleation layers to fabricate high quality GaN crystals in various optoelectronics.

CVD of SiC and AlN using cyclic organometallic precursors

Science.gov (United States)

Interrante, L. V.; Larkin, D. J.; Amato, C.

1992-01-01

The use of cyclic organometallic molecules as single-source MOCVD precursors is illustrated by means of examples taken from our recent work on AlN and SiC deposition, with particular focus on SiC. Molecules containing (AlN)3 and (SiC)2 rings as the 'core structure' were employed as the source materials for these studies. The organoaluminum amide, (Me2AlNH2)3, was used as the AlN source and has been studied in a molecular beam sampling apparatus in order to determine the gas phase species present in a hot-wall CVD reactor environment. In the case of SiC CVD, a series of disilacyclobutanes (Si(XX')CH2)2 (with X and X' = H, CH3, and CH2SiH2CH3), were examined in a cold-wall, hot-stage CVD reactor in order to compare their relative reactivities and prospective utility as single-source CVD precursors. The parent compound, disilacyclobutane, (SiH2CH2)2, was found to exhibit the lowest deposition temperature (ca. 670 C) and to yield the highest purity SiC films. This precursor gave a highly textured, polycrystalline film on the Si(100) substrates.

Single-crystalline AlN growth on sapphire using physical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Cardenas-Valencia, Andres M., E-mail: andres.cardenas@sri.co [SRI International (United States); Onishi, Shinzo; Rossie, Benjamin [SRI International (United States)

2011-02-07

A novel technique for growing single crystalline aluminum nitride (AlN) films is presented. The novelty of the technique, specifically, comes from the use of an innovative physical vapor deposition magnetron sputtering tool, which embeds magnets into the target material. A relatively high deposition rates is achieved ({approx}0.2 {mu}m/min), at temperatures between 860 and 940 {sup o}C. The AlN, grown onto sapphire, is single-crystalline as evidenced by observation using transmission electron microscopy. Tool configuration and growth conditions are discussed, as well as a first set of other analytical results, namely, x-ray diffraction and ultraviolet-visible transmission spectrophotometry.

Barrier effect of AlN film in flexible Cu(In,Ga)Se{sub 2} solar cells on stainless steel foil and solar cell

Energy Technology Data Exchange (ETDEWEB)

Li, Boyan; Li, Jianjun [Institute of Photo-electronic Thin Film Devices and Technology, Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Nankai University, Tianjin 300071 (China); Wu, Li [The MOE Key Laboratory of Weak-Light Nonlinear Photonics, School of Physics, Nankai University, Tianjin 300071 (China); Liu, Wei; Sun, Yun [Institute of Photo-electronic Thin Film Devices and Technology, Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Nankai University, Tianjin 300071 (China); Zhang, Yi, E-mail: yizhang@nankai.edu.cn [Institute of Photo-electronic Thin Film Devices and Technology, Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Nankai University, Tianjin 300071 (China)

2015-04-05

Highlights: • The adhension between AlN film and Mo are verygood. • AlN film can be effectively used as the barrier of flexible CIGS solar cell on SS substrate. • AlN film is suitable as the insulation barrier of flexible CIGS solar cell on SS substrate. - Abstract: The AlN film deposited by DC magnetron sputtering on stainless steel (SS) foils was used as the barrier in flexible Cu(In,Ga)Se{sub 2} (CIGS) solar cells on stainless steel foil and characterized comprehensively by X-ray diffraction (XRD), scanning electron microscopy (SEM), I–V, and QE measurements study. The study of AlN as insulation barrier in the flexible CIGS solar cell showed that the adhesion strength between the SS foil and the deposited AlN film was very strong even after annealing at high temperature at 530 °C. More importantly, a high resistance of over 10 MΩ was remained with the film with thickness of around 200 nm after annealing. This indicates that the AlN film is suitable as an effective insulation barrier in flexible CIGS solar cells based on SS foil. In addition, the XRD and SEM results showed that the AlN film did not influence the crystal structure of the Mo film which was deposited upon the AlN layer and used as the electrical contact in CIGS solar cells. It was found that the AlN film contributed to an improved crystallinity of the Mo contact layer compared to the bare SS foil. The combined results of secondary ion mass spectrometry, I–V and EQE measurements of the corresponding flexible CIGS solar cells confirmed that 1 μm-thick AlN film could be used as an efficient barrier layer in CIGS solar cells on SS foil.

Properties of planar structures based on Policluster films of diamond and AlN

Science.gov (United States)

Belyanin, A. F.; Luchnikov, A. P.; Nalimov, S. A.; Bagdasarian, A. S.

2018-01-01

AlN films doped with zinc were grown on Si substrates by RF magnetron reactive sputtering of a compound target. Policluster films of diamond doped with boron were formed on layered Si/AlN substrates from the gas phase hydrogen and methane, activated arc discharge. By electron microscopy, X-ray diffraction and Raman spectroscopy the composition and structure of synthetic policluster films of diamond and AlN films were studied. Photovoltaic devices based on the AlN/PFD layered structure are presented.

AlGaN-based deep-ultraviolet light-emitting diodes grown on high-quality AlN template using MOVPE

KAUST Repository

Yan, Jianchang; Wang, Junxi; Zhang, Yun; Cong, Peipei; Sun, Lili; Tian, Yingdong; Zhao, Chao; Li, Jinmin

2015-01-01

In this article, we report the growth of high-quality AlN film using metal-organic vapor phase epitaxy. Three layers of middle-temperature (MT) AlN were introduced during the high-temperature (HT) AlN growth. During the MT-AlN layer growth, aluminum and nitrogen sources were closed for 6 seconds after every 5-nm MT-AlN, while H2 carrier gas was always on. The threading dislocation density in an AlN epi-layer on a sapphire substrate was reduced by almost half. AlGaN-based deep-ultraviolet light-emitting diodes were further fabricated based on the AlN/sapphire template. At 20 mA driving current, the emitted peak wavelength is 284.5 nm and the light output power exceeds 3 mW.

AlGaN-based deep-ultraviolet light-emitting diodes grown on high-quality AlN template using MOVPE

KAUST Repository

Yan, Jianchang

2015-03-01

In this article, we report the growth of high-quality AlN film using metal-organic vapor phase epitaxy. Three layers of middle-temperature (MT) AlN were introduced during the high-temperature (HT) AlN growth. During the MT-AlN layer growth, aluminum and nitrogen sources were closed for 6 seconds after every 5-nm MT-AlN, while H2 carrier gas was always on. The threading dislocation density in an AlN epi-layer on a sapphire substrate was reduced by almost half. AlGaN-based deep-ultraviolet light-emitting diodes were further fabricated based on the AlN/sapphire template. At 20 mA driving current, the emitted peak wavelength is 284.5 nm and the light output power exceeds 3 mW.

Preliminary comparison of three processes of AlN oxidation: dry, wet and mixed ones

Directory of Open Access Journals (Sweden)

Korbutowicz R.

2016-03-01

Full Text Available Three methods of AlN layers oxidation: dry, wet and mixed (wet with oxygen were compared. Some physical parameters of oxidized thin films of aluminum nitride (AlN layers grown on silicon Si(1 1 1 were investigated by means Energy-Dispersive X-ray Spectroscopy (EDS and Spectroscopic Ellipsometry (SE. Three series of the thermal oxidations processes were carried out at 1012 °C in pure nitrogen as carrying gas and various gas ambients: (a dry oxidation with oxygen, (b wet oxidation with water steam and (c mixed atmosphere with various process times. All the research methods have shown that along with the rising of the oxidation time, AlN layer across the aluminum oxide nitride transforms to aluminum oxide. The mixed oxidation was a faster method than the dry or wet ones.

Non-volatile polarization switch of magnetic domain wall velocity

Energy Technology Data Exchange (ETDEWEB)

Huang, Z.; Stolichnov, I.; Setter, N. [Ceramics Laboratory, EPFL-Swiss Federal Institute of Technology, Lausanne 1015 (Switzerland); Bernand-Mantel, A.; Schott, Marine; Pizzini, S.; Ranno, L. [University of Grenoble Alpes, Institut Néel, F-38042 Grenoble (France); CNRS, Institut Néel, F-38042 Grenoble (France); Auffret, S.; Gaudin, G. [SPINTEC, UMR-8191, CEA/CNRS/UJF/GINP, INAC, F-38054 Grenoble (France)

2015-12-21

Controlled propagation speed of individual magnetic domains in metal channels at the room temperature is obtained via the non-volatile field effect associated with the switchable polarization of P(VDF-TrFE) (polyvinylidene fluoride-trifluoroethylene) ferroelectric polymer. Polarization domains directly written using conducting atomic force microscope probe locally accelerate/decelerate the magnetic domains in the 0.6 nm thick Co film. The change of the magnetic domain wall velocity is consistent with the magnetic anisotropy energy modulation through the polarization upward/downward orientation. Excellent retention is observed. The demonstrated local non-destructive and reversible change of magnetic properties via rewritable patterning of ferroelectric domains could be attractive for exploring the ultimate limit of miniaturization in devices based on ferromagnetic/ferroelectric bilayers.

Fabrication of AlN thin films on different substrates at ambient temperature

CERN Document Server

Cai, W X; Wu, P H; Yang, S Z; Ji, Z M

2002-01-01

Aluminium nitride (AlN) is very useful as a barrier in superconductor-insulator-superconductor (SIS) device or as an insulating layer in many other applications. At ambient temperature, we deposit AlN thin films onto different substrates (such as MgO, LaAlO sub 3 and Si) by using radio-frequency magnetron sputtering and pure Al target. X-ray diffraction (XRD) and PHI-scan patterns show that the films grown on MgO substrates are excellent epitaxial films with (101) orientation of a hexagonal lattice. A possible structure of the interface between the film and the substrate is suggested and discussed.

Guarded Cubical Type Theory

DEFF Research Database (Denmark)

Birkedal, Lars; Bizjak, Aleš; Clouston, Ranald

2016-01-01

This paper improves the treatment of equality in guarded dependent type theory (GDTT), by combining it with cubical type theory (CTT). GDTT is an extensional type theory with guarded recursive types, which are useful for building models of program logics, and for programming and reasoning...... with coinductive types. We wish to implement GDTT with decidable type-checking, while still supporting non-trivial equality proofs that reason about the extensions of guarded recursive constructions. CTT is a variation of Martin-L\\"of type theory in which the identity type is replaced by abstract paths between...... terms. CTT provides a computational interpretation of functional extensionality, is conjectured to have decidable type checking, and has an implemented type-checker. Our new type theory, called guarded cubical type theory, provides a computational interpretation of extensionality for guarded recursive...

Guarded Cubical Type Theory

DEFF Research Database (Denmark)

Birkedal, Lars; Bizjak, Aleš; Clouston, Ranald

2016-01-01

This paper improves the treatment of equality in guarded dependent type theory (GDTT), by combining it with cubical type theory (CTT). GDTT is an extensional type theory with guarded recursive types, which are useful for building models of program logics, and for programming and reasoning...... with coinductive types. We wish to implement GDTT with decidable type checking, while still supporting non-trivial equality proofs that reason about the extensions of guarded recursive constructions. CTT is a variation of Martin-L\\"of type theory in which the identity type is replaced by abstract paths between...... terms. CTT provides a computational interpretation of functional extensionality, enjoys canonicity for the natural numbers type, and is conjectured to support decidable type-checking. Our new type theory, guarded cubical type theory (GCTT), provides a computational interpretation of extensionality...

Superconducting NbN single-photon detectors on GaAs with an AlN buffer layer

Energy Technology Data Exchange (ETDEWEB)

Schmidt, Ekkehart; Merker, Michael; Ilin, Konstantin; Siegel, Michael [Institut fuer Mikro- und Nanoelektronische Systeme (IMS), Karlsruher Institut fuer Technologie, Hertzstrasse 16, 76187 Karlsruhe (Germany)

2015-07-01

GaAs is the material of choice for photonic integrated circuits. It allows the monolithic integration of single-photon sources like quantum dots, waveguide based optical circuits and detectors like superconducting nanowire single-photon detectors (SNSPDs) onto one chip. The growth of high quality NbN films on GaAs is challenging, due to natural occurring surface oxides and the large lattice mismatch of about 27%. In this work, we try to overcome these problems by the introduction of a 10 nm AlN buffer layer. Due to the buffer layer, the critical temperature of 6 nm thick NbN films was increased by about 1.5 K. Furthermore, the critical current density at 4.2 K of NbN flim deposited onto GaAs with AlN buffer is 50% higher than of NbN film deposited directly onto GaAs substrate. We successfully fabricated NbN SNSPDs on GaAs with a AlN buffer layer. SNSPDs were patterned using electron-beam lithography and reactive-ion etching techniques. Results on the study of detection efficiency and jitter of a NbN SNSPD on GaAs, with and without AlN buffer layer will be presented and discussed.

Improved crystalline quality of AlN epitaxial layer on sapphire by introducing TMGa pulse flow into the nucleation stage

Science.gov (United States)

Wu, Hualong; Wang, Hailong; Chen, Yingda; Zhang, Lingxia; Chen, Zimin; Wu, Zhisheng; Wang, Gang; Jiang, Hao

2018-05-01

The crystalline quality of AlN epitaxial layers on sapphire substrates was improved by introducing trimethylgallium (TMGa) pulse flow into the growth of AlN nucleation layers. It was found that the density of both screw- and edge-type threading dislocations could be significantly reduced by introducing the TMGa pulse flow. With increasing TMGa pulse flow times, the lateral correlation length (i.e. the grain size) increases and the strain in the AlN epilayers changes from tensile state to compressive state. Unstrained AlN with the least dislocations and a smooth surface was obtained by introducing 2-times TMGa pulse flow. The crystalline improvement is attributed to enhanced lateral growth and improved crystalline orientation by the TMGa pulse flow.

Measuring polarization dependent dispersion of non-polarizing beam splitter cubes with spectrally resolved white light interferometry

Science.gov (United States)

Csonti, K.; Hanyecz, V.; Mészáros, G.; Kovács, A. P.

2017-06-01

In this work we have measured the group-delay dispersion of an empty Michelson interferometer for s- and p-polarized light beams applying two different non-polarizing beam splitter cubes. The interference pattern appearing at the output of the interferometer was resolved with two different spectrometers. It was found that the group-delay dispersion of the empty interferometer depended on the polarization directions in case of both beam splitter cubes. The results were checked by inserting a glass plate in the sample arm of the interferometer and similar difference was obtained for the two polarization directions. These results show that to reach high precision, linearly polarized white light beam should be used and the residual dispersion of the empty interferometer should be measured at both polarization directions.

The optical properties and applications of AlN thin films prepared by a helicon sputtering system

CERN Document Server

Chiu, W Y; Kao, H L; Jeng, E S; Chen, J S; Jaing, C C

2002-01-01

AlN thin films were grown on SiO sub 2 /Si and quartz substrates using a helicon sputtering system. The dependence of film quality on growth parameters, such as total sputtering pressure, substrate temperature, and nitrogen concentration has been studied. There is a good correlation of thin film crystallinity addressed by x-ray diffraction (XRD) and spectroscopic ellipsometer. The optimized films exhibit highly oriented, with only (002) peak shown in a theta-2 theta scan XRD pattern, and extremely smooth surface with rms roughness of 2 Aa. The extinction coefficient of the film was 4x10 sup - sup 4 , which is lower than that of AlN films grown by conventional sputtering. Double-layer antireflection (DLAR) coating using AlN and Al sub 3 O sub 3 grown on quartz has been demonstrated. The transmittance of DLAR was high as 96% compared to 93% of bare substrates with the measurement error less than 0.2%. AlN films prepared by Helicon sputtering thus are potential for optical application.

Low-temperature growth of high quality AlN films on carbon face 6H-SiC

Energy Technology Data Exchange (ETDEWEB)

Kim, Myunghee [Department of General Systems Studies, The University of Tokyo, 3-8-1 Komaba, Meguro-ku, Tokyo 153-8902 (Japan); Ohta, Jitsuo; Fujioka, Hiroshi [Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Tokyo 153-8505 (Japan); Kanagawa Academy of Science and Technology (KAST), 3-2-1 Sakado, Kawasaki 213-0012 (Japan); Kobayashi, Atsushi [Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Tokyo 153-8505 (Japan); Oshima, Masaharu [Department of General Systems Studies, The University of Tokyo, 3-8-1 Komaba, Meguro-ku, Tokyo 153-8902 (Japan); Department of Applied Chemistry, The University of Tokyo, 4-3-1 Hongo, Tokyo 113-8656 (Japan); Core Research for Evolutional Science and Technology (CREST), Japan Science and Technology Agency (JST), Chiyoda-ku, Tokyo 102-0075 (Japan)

2008-01-15

AlN films have been grown on atomically flat carbon face 6H-SiC (000 anti 1) substrates by pulsed laser deposition and their structural properties have been investigated. In-situ reflection high-energy electron diffraction observations have revealed that growth of AlN at 710 C proceeds in a Stranski-Krastanov mode, while typical layer-by-layer growth occurs at room temperature (RT) with atomically flat surfaces. It has been revealed that the crystalline quality of the AlN film is dramatically improved by the reduction in growth temperature down to RT and the full width at half maximum values in the X-ray rocking curves for 0004 and 10 anti 12 diffractions of the RT-grown AlN film are 0.05 and 0.07 , respectively. X-ray reciprocal space mapping has revealed that the introduction of misfit dislocations is suppressed in the case of RT growth, which is probably responsible for the improvement in crystalline quality. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

A novel surface micromachining process to fabricate AlN unimorph suspensions and its application for RF resonators

NARCIS (Netherlands)

Saravanan, S.; Saravanan, S.; Berenschot, Johan W.; Krijnen, Gijsbertus J.M.; Elwenspoek, Michael Curt

2006-01-01

A novel surface micromachining process is reported for aluminum nitride (AlN) thin films to fabricate piezoelectric unimorph suspension devices for micro actuator applications. Wet anisotropic etching of AlN thin film is used with a Cr metal mask layer in the microfabrication process. Tetra methyl

High temperature energy harvesters utilizing ALN/3C-SiC composite diaphragms

Science.gov (United States)

Lai, Yun-Ju; Li, Wei-Chang; Felmetsger, Valery V.; Senesky, Debbie G.; Pisano, Albert P.

2014-06-01

Microelectromechanical systems (MEMS) energy harvesting devices aiming at powering wireless sensor systems for structural health monitoring in harsh environments are presented. For harsh environment wireless sensor systems, sensor modules are required to operate at elevated temperatures (> 250°C) with capabilities to resist harsh chemical conditions, thereby the use of battery-based power sources becomes challenging and not economically efficient if considering the required maintenance efforts. To address this issue, energy harvesting technology is proposed to replace batteries and provide a sustainable power source for the sensor systems towards autonomous harsh environment wireless sensor networks. In particular, this work demonstrates a micromachined aluminum nitride/cubic silicon carbide (AlN/3C-SiC) composite diaphragm energy harvester, which enables high temperature energy harvesting from ambient pulsed pressure sources. The fabricated device yields an output power density of 87 μW/cm2 under 1.48-psi pressure pulses at 1 kHz while connected to a 14.6-kΩ load resistor. The effects of pulse profile on output voltage have been studied, showing that the output voltage can be maximized by optimizing the diaphragm resonance frequency based on specific pulse characteristics. In addition, temperature dependence of the diaphragm resonance frequency over the range of 20°C to 600°C has been investigated and the device operation at temperatures as high as 600°C has been verified.

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors.

Science.gov (United States)

Hardy, Matthew T; Storm, David F; Katzer, D Scott; Downey, Brian P; Nepal, Neeraj; Meyer, David J

2016-11-24

Plasma-assisted molecular beam epitaxy is well suited for the epitaxial growth of III-nitride thin films and heterostructures with smooth, abrupt interfaces required for high-quality high-electron-mobility transistors (HEMTs). A procedure is presented for the growth of N-polar InAlN HEMTs, including wafer preparation and growth of buffer layers, the InAlN barrier layer, AlN and GaN interlayers and the GaN channel. Critical issues at each step of the process are identified, such as avoiding Ga accumulation in the GaN buffer, the role of temperature on InAlN compositional homogeneity, and the use of Ga flux during the AlN interlayer and the interrupt prior to GaN channel growth. Compositionally homogeneous N-polar InAlN thin films are demonstrated with surface root-mean-squared roughness as low as 0.19 nm and InAlN-based HEMT structures are reported having mobility as high as 1,750 cm 2 /V∙sec for devices with a sheet charge density of 1.7 x 10 13 cm -2 .

Globally Polarized Quark-gluon Plasma in Non-central A+ACollisions

Energy Technology Data Exchange (ETDEWEB)

Liang, Zuo-tang; Wang, Xin-Nian

2004-10-01

Produced partons have large local relative orbital angular momentum along the direction opposite to the reaction plane in the early stage of non-central heavy-ion collisions. Parton scattering is shown to polarize quarks along the same direction due to spin-orbital coupling.Such global quark polarization will lead to many observable consequences,such as left-right asymmetry of hadron spectra, global transverse polarization of thermal photons, dileptons and hadrons. Hadrons from the decay of polarized resonances will have azimuthal asymmetry similar to the elliptic flow. Global hyperon polarization is predicted with indifferent hadronization scenarios and can be easily tested.

Growth and characterization of cubic AlGaN/GaN based devices

Energy Technology Data Exchange (ETDEWEB)

Potthast, S.

2006-11-15

Cubic GaN and AlGaN layers are grown by radio frequency plasma assisted molecular beam epitaxy on freestanding 3C-SiC (001) substrates. Detailed analysis of the substrate quality reveal a direct dependence of the roughness of the 3C-SiC on the dislocation density. Additionally a strong influence of the substrate quality on the quality of cubic GaN layers is found. GaN, AlGaN and AlN buffer layers grown at different temperatures are used to improve the structural properties of the c-GaN buffer. Best values are obtained for AlN buffers deposited at T{sub Subs}=720 C. Furthermore, the growth temperature of the buffer itself is varied. Optimized results are found for T{sub Subs}=720 C grown under a Ga coverage of one monolayer. On top of the GaN buffer, AlGaN films (0

Electrical properties of MBE grown Si{sub 3}N{sub 4}-cubic GaN MIS structures

Energy Technology Data Exchange (ETDEWEB)

Zado, A.; Lischka, K.; As, D.J. [University of Paderborn, Faculty of Science, Department of Physics, Warburger Str. 100, 33098 Paderborn (Germany)

2012-03-15

In this work we report on the electrical characterization of non-polar cubic GaN metal-insulator-semiconductor (MIS) structures. Si{sub 3}N{sub 4} layers were deposited in-situ on top of cubic GaN grown on 3C-SiC (001) substrates. The electric characteristics of the MIS structures are measured by capacitance and admittance spectroscopy techniques. From the hysteresis in the capacitance-voltage curves and the peak height of the conductance G{sub p} -{omega} frequency curves the interface state densities are calculated. We find interface traps about 0.3 eV below the conduction band. The density of these traps is D{sub it} = 2.5x10{sup 11} cm{sup -2}eV{sup -1}. This is one order of magnitude lower than in MIS structures with a Si{sub 3}N{sub 4} insulator produced by plasma enhanced vapour deposition and two orders of magnitude lower than in MIS structures on c-GaN with SiO{sub 2} as insulator (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

AlN and Al oxy-nitride gate dielectrics for reliable gate stacks on Ge and InGaAs channels

Energy Technology Data Exchange (ETDEWEB)

Guo, Y.; Li, H.; Robertson, J. [Engineering Department, Cambridge University, Cambridge CB2 1PZ (United Kingdom)

2016-05-28

AlN and Al oxy-nitride dielectric layers are proposed instead of Al{sub 2}O{sub 3} as a component of the gate dielectric stacks on higher mobility channels in metal oxide field effect transistors to improve their positive bias stress instability reliability. It is calculated that the gap states of nitrogen vacancies in AlN lie further away in energy from the semiconductor band gap than those of oxygen vacancies in Al{sub 2}O{sub 3}, and thus AlN might be less susceptible to charge trapping and have a better reliability performance. The unfavourable defect energy level distribution in amorphous Al{sub 2}O{sub 3} is attributed to its larger coordination disorder compared to the more symmetrically bonded AlN. Al oxy-nitride is also predicted to have less tendency for charge trapping.

Possible significance of cubic water-ice, H2O-Ic, in the atmospheric water cycle of Mars

Science.gov (United States)

Gooding, James L.

1988-01-01

The possible formation and potential significance of the cubic ice polymorph on Mars is discussed. When water-ice crystallizes on Earth, the ambient conditions of temperature and pressure result in the formation of the hexagonal ice polymorph; however, on Mars, the much lower termperature and pressures may permit the crystallization of the cubic polymorph. Cubic ice has two properties of possible importance on Mars: it is an excellant nucleator of other volatiles (such as CO2), and it undergoes an exothermic transition to hexagonal ice at temperatures above 170 K. These properties may have significant implications for both martian cloud formation and the development of the seasonal polar caps.

Cubical local partial orders on cubically subdivided spaces - existence and construction

DEFF Research Database (Denmark)

Fajstrup, Lisbeth

The geometric models of Higher Dimensional Automata and Dijkstra's PV-model are cubically subdivided topological spaces with a local partial order. If a cubicalization of a topological space is free of immersed cubic Möbius bands, then there are consistent choices of direction in all cubes, such ...... that the underlying geometry of an HDA may be quite complicated....

Cubical local partial orders on cubically subdivided spaces - Existence and construction

DEFF Research Database (Denmark)

Fajstrup, Lisbeth

2006-01-01

The geometric models of higher dimensional automata (HDA) and Dijkstra's PV-model are cubically subdivided topological spaces with a local partial order. If a cubicalization of a topological space is free of immersed cubic Möbius bands, then there are consistent choices of direction in all cubes...... that the underlying geometry of an HDA may be quite complicated....

Enhanced Piezoelectric Response of AlN via CrN Alloying

Energy Technology Data Exchange (ETDEWEB)

Manna, Sukriti; Talley, Kevin R.; Gorai, Prashun; Mangum, John; Zakutayev, Andriy; Brennecka, Geoff L.; Stevanović, Vladan; Ciobanu, Cristian V.

2018-03-01

Since AlN has emerged as an important piezoelectric material for a wide variety of applications, efforts have been made to increase its piezoelectric response via alloying with transition metals that can substitute for Al in the wurtzite lattice. We report on density functional theory calculations of structure and properties of the CrxAl1-xN system for Cr concentrations ranging from zero to beyond the wurtzite-rocksalt transition point. By studying the different contributions to the longitudinal piezoelectric coefficient, we propose that the physical origin of the enhanced piezoelectricity in CrxAl1-xN alloys is the increase of the internal parameter u of the wurtzite structure upon substitution of Al with the larger Cr ions. Among a set of wurtzite-structured materials, we find that CrxAl1-xN has the most sensitive piezoelectric coefficient with respect to alloying concentration. Based on these results, we propose that CrxAl1-xN is a viable piezoelectric material whose properties can be tuned via Cr composition. We support this proposal by combinatorial synthesis experiments, which show that Cr can be incorporated in the AlN lattice up to 30% before a detectable transition to rocksalt occurs. At this Cr content, the piezoelectric modulus d33 is approximately 4 times larger than that of pure AlN. This finding, combined with the relative ease of synthesis under nonequilibrium conditions, may position CrxAl1-xN as a prime piezoelectric material for applications such as resonators and acoustic wave generators.

Enhanced Piezoelectric Response of AlN via CrN Alloying

Science.gov (United States)

Manna, Sukriti; Talley, Kevin R.; Gorai, Prashun; Mangum, John; Zakutayev, Andriy; Brennecka, Geoff L.; Stevanović, Vladan; Ciobanu, Cristian V.

2018-03-01

Since AlN has emerged as an important piezoelectric material for a wide variety of applications, efforts have been made to increase its piezoelectric response via alloying with transition metals that can substitute for Al in the wurtzite lattice. We report on density functional theory calculations of structure and properties of the Crx Al1 -x N system for Cr concentrations ranging from zero to beyond the wurtzite-rocksalt transition point. By studying the different contributions to the longitudinal piezoelectric coefficient, we propose that the physical origin of the enhanced piezoelectricity in Crx Al1 -x N alloys is the increase of the internal parameter u of the wurtzite structure upon substitution of Al with the larger Cr ions. Among a set of wurtzite-structured materials, we find that Crx Al1 -x N has the most sensitive piezoelectric coefficient with respect to alloying concentration. Based on these results, we propose that Crx Al1 -x N is a viable piezoelectric material whose properties can be tuned via Cr composition. We support this proposal by combinatorial synthesis experiments, which show that Cr can be incorporated in the AlN lattice up to 30% before a detectable transition to rocksalt occurs. At this Cr content, the piezoelectric modulus d33 is approximately 4 times larger than that of pure AlN. This finding, combined with the relative ease of synthesis under nonequilibrium conditions, may position Crx Al1 -x N as a prime piezoelectric material for applications such as resonators and acoustic wave generators.

Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes

Science.gov (United States)

Hu, Hongpo; Zhou, Shengjun; Liu, Xingtong; Gao, Yilin; Gui, Chengqun; Liu, Sheng

2017-03-01

We report on the demonstration of GaN-based ultraviolet light-emitting diodes (UV LEDs) emitting at 375 nm grown on patterned sapphire substrate (PSS) with in-situ low temperature GaN/AlGaN nucleation layers (NLs) and ex-situ sputtered AlN NL. The threading dislocation (TD) densities in GaN-based UV LEDs with GaN/AlGaN/sputtered AlN NLs were determined by high-resolution X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (TEM), which revealed that the TD density in UV LED with AlGaN NL was the highest, whereas that in UV LED with sputtered AlN NL was the lowest. The light output power (LOP) of UV LED with AlGaN NL was 18.2% higher than that of UV LED with GaN NL owing to a decrease in the absorption of 375 nm UV light in the AlGaN NL with a larger bandgap. Using a sputtered AlN NL instead of the AlGaN NL, the LOP of UV LED was further enhanced by 11.3%, which is attributed to reduced TD density in InGaN/AlInGaN active region. In the sputtered AlN thickness range of 10-25 nm, the LOP of UV LED with 15-nm-thick sputtered AlN NL was the highest, revealing that optimum thickness of the sputtered AlN NL is around 15 nm.

Randomized Block Cubic Newton Method

KAUST Repository

Doikov, Nikita; Richtarik, Peter

2018-01-01

We study the problem of minimizing the sum of three convex functions: a differentiable, twice-differentiable and a non-smooth term in a high dimensional setting. To this effect we propose and analyze a randomized block cubic Newton (RBCN) method, which in each iteration builds a model of the objective function formed as the sum of the natural models of its three components: a linear model with a quadratic regularizer for the differentiable term, a quadratic model with a cubic regularizer for the twice differentiable term, and perfect (proximal) model for the nonsmooth term. Our method in each iteration minimizes the model over a random subset of blocks of the search variable. RBCN is the first algorithm with these properties, generalizing several existing methods, matching the best known bounds in all special cases. We establish ${\\cal O}(1/\\epsilon)$, ${\\cal O}(1/\\sqrt{\\epsilon})$ and ${\\cal O}(\\log (1/\\epsilon))$ rates under different assumptions on the component functions. Lastly, we show numerically that our method outperforms the state-of-the-art on a variety of machine learning problems, including cubically regularized least-squares, logistic regression with constraints, and Poisson regression.

Randomized Block Cubic Newton Method

KAUST Repository

Doikov, Nikita

2018-02-12

We study the problem of minimizing the sum of three convex functions: a differentiable, twice-differentiable and a non-smooth term in a high dimensional setting. To this effect we propose and analyze a randomized block cubic Newton (RBCN) method, which in each iteration builds a model of the objective function formed as the sum of the natural models of its three components: a linear model with a quadratic regularizer for the differentiable term, a quadratic model with a cubic regularizer for the twice differentiable term, and perfect (proximal) model for the nonsmooth term. Our method in each iteration minimizes the model over a random subset of blocks of the search variable. RBCN is the first algorithm with these properties, generalizing several existing methods, matching the best known bounds in all special cases. We establish ${\\\\cal O}(1/\\\\epsilon)$, ${\\\\cal O}(1/\\\\sqrt{\\\\epsilon})$ and ${\\\\cal O}(\\\\log (1/\\\\epsilon))$ rates under different assumptions on the component functions. Lastly, we show numerically that our method outperforms the state-of-the-art on a variety of machine learning problems, including cubically regularized least-squares, logistic regression with constraints, and Poisson regression.

Conversion of polar and non-polar algae oil lipids to fatty acid methyl esters with solid acid catalysts--A model compound study.

Science.gov (United States)

Asikainen, Martta; Munter, Tony; Linnekoski, Juha

2015-09-01

Bio-based fuels are becoming more and more important due to the depleting fossil resources. The production of biodiesel from algae oil is challenging compared to terrestrial vegetable oils, as algae oil consists of polar fatty acids, such as phospholipids and glycolipids, as well as non-polar triglycerides and free fatty acids common in vegetable oils. It is shown that a single sulphonated solid acid catalyst can perform the esterification and transesterification reactions of both polar and non-polar lipids. In mild reaction conditions (60-70 °C) Nafion NR50 catalyst produces methyl palmitate (FAME) from the palmitic acid derivatives of di-, and tri-glyceride, free fatty acid, and phospholipid with over 80% yields, with the glycolipid derivative giving nearly 40% yields of FAME. These results demonstrate how the polar and non-polar lipid derivatives of algal oil can be utilised as feedstocks for biodiesel production with a single catalyst in one reaction step. Copyright © 2015 Elsevier Ltd. All rights reserved.

Study of the 27Al(n,2,)26Al reaction via accelerator mass spectrometry

International Nuclear Information System (INIS)

Wallner, A.

2000-06-01

The excitation function for the 27 Al(n,2n) 26 Al reaction is expected to show a strongly non-linear behavior in the neutron-energy region around 14 MeV, the neutron energy in D-T plasmas; thus the production rate of 26 Al (t 1/2 =7.2*10 5 a) in D-T fusion environments can in principle be used to measure the temperature of such plasmas. Existing measurements, however, are strongly discordant. Therefore, a new accurate measurement of the 27 Al(n,2n) 26 Al cross sections in the near threshold region (E n =13.5-14.8 MeV) was performed with the goal to achieve relative cross sections with the highest accuracy possible. In addition, the measurements were also designed to provide good absolute cross-section values, as absolute cross sections are important for radioactive waste predictions. Samples of Al metal were irradiated with neutrons in the energy range near threshold (E th =13.55 MeV) at the Radiuminstitutes of both Vienna and St. Petersburg, and in Tokai-mura, Japan. In Tuebingen irradiations with neutrons of higher energies (17 and 19 MeV) were performed. The amount of 26 Al produced during the irradiations was measured via accelerator mass spectrometry (AMS) at the Vienna Environmental Research Accelerator (VERA). This work represents the first 26 Al measurements for this new facility. With this system, a background as low as 3*10 -15 for 26 Al/ 27 Al isotope ratios was obtained, corresponding to a (n,2n) cross section of 0.04 mb. Utilizing AMS, cross sections with much higher precision and considerably closer to the threshold than in previous investigations could be measured. The prerequisite for its application as a temperature monitor, namely a very well known shape of the excitation function was met. A quantitative prediction of the sensitivity of this method for monitoring the temperature in a D-T fusion plasma was therefore possible. For thermal plasmas temperature changes in the order of 5 to 15 % should be detectable. An even higher sensitivity was found

Indentation-Induced Mechanical Deformation Behaviors of AlN Thin Films Deposited on c-Plane Sapphire

International Nuclear Information System (INIS)

Jian, Sh.R.; Juang, J.Y.

2012-01-01

The mechanical properties and deformation behaviors of AlN thin films deposited on c-plane sapphire substrates by helicon sputtering method were determined using the Berkovich nano indentation and cross-sectional transmission electron microscopy (XTEM). The load-displacement curves show the 'pop-ins' phenomena during nano indentation loading, indicative of the formation of slip bands caused by the propagation of dislocations. No evidence of nano indentation-induced phase transformation or cracking patterns was observed up to the maximum load of 80 mN, from either XTEM or atomic force microscopy (AFM) of the mechanically deformed regions. Instead, XTEM revealed that the primary deformation mechanism in AlN thin films is via propagation of dislocations on both basal and pyramidal planes. Furthermore, the hardness and Young's modulus of AlN thin films estimated using the continuous contact stiffness measurements (CSMs) mode provided with the nanoindenter are 16.2 GPa and 243.5 GPa, respectively.

Effect of asymmetrical transfer coefficients of a non-polarizing beam splitter on the nonlinear error of the polarization interferometer

Science.gov (United States)

Zhao, Chen-Guang; Tan, Jiu-Bin; Liu, Tao

2010-09-01

The mechanism of a non-polarizing beam splitter (NPBS) with asymmetrical transfer coefficients causing the rotation of polarization direction is explained in principle, and the measurement nonlinear error caused by NPBS is analyzed based on Jones matrix theory. Theoretical calculations show that the nonlinear error changes periodically, and the error period and peak values increase with the deviation between transmissivities of p-polarization and s-polarization states. When the transmissivity of p-polarization is 53% and that of s-polarization is 48%, the maximum error reaches 2.7 nm. The imperfection of NPBS is one of the main error sources in simultaneous phase-shifting polarization interferometer, and its influence can not be neglected in the nanoscale ultra-precision measurement.

GaN growth on silane exposed AlN seed layers

Energy Technology Data Exchange (ETDEWEB)

Ruiz-Zepeda, F. [Posgrado en Fisica de Materiales, Centro de Investigacion Cientifica y de Educacion Superior de Ensenada, Km. 107 Carret, Tijuana-Ensenada, C.P. 22860, Ensenada, B.C. (Mexico); Contreras, O. [Centro de Ciencias de la Materia Condesada, Universidad Nacional Autonoma de Mexico, Apdo. Postal 356, C.P. 22800, Ensenada, B.C. (Mexico); Dadgar, A.; Krost, A. [Otto-von-Guericke-Universitaet Magdeburg, FNW-IEP, Universitaetsplatz 2, 39106 Magdeburg (Germany)

2008-07-01

The microstructure and surface morphology of GaN films grown on AlN seed layers exposed to silane flow has been studied by TEM and AFM. The epilayers were grown on silicon(111) substrates by MOCVD. The AlN seed layer surface was treated at different SiH{sub 4} exposure times prior to the growth of the GaN film. A reduction in the density of threading dislocations is observed in the GaN films and their surface roughness is minimized for an optimal SiH{sub 4} exposure time between 75-90 sec. At this optimal condition a step-flow growth mode of GaN film is predominant. The improvement of the surface and structure quality of the epilayers is observed to be related to an annihilation process of threading dislocations done by SiN{sub x} masking. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Quadrupolar interactions in non-cubic crystal and related extra heat capacities. Possible effects on a sapphire bolometer

Energy Technology Data Exchange (ETDEWEB)

Bassou, M. [Tunis Univ. (Tunisia)]|[CEA/DSM/DRECAM/SPEC, Gif-wur-Yvette (France); Rotter, M. [Karlova Univ., Prague (Czech Republic)]|[CEA/DSM/DRECAM/SPEC, Gif-wur-Yvette (France); Bernier, M. [CEA/DSM/DRECAM/SPEC, Gif-wur-Yvette (France); Chapellier, M. [CEA/DSM/DRECAM/SPEC, Gif-wur-Yvette (France)

1996-02-11

It is shown that in a non-cubic crystal, the extra heat capacity due to quadrupolar interaction of nuclear spins >1/2 could be much bigger than the phonon heat capacity when the temperature decreases. The possible coupling between quadrupolar and phonon heat reservoir via paramagnetic impurities is stressed. A NMR experiment done on sapphire is presented with an evaluation of the coupling between the two reservoirs and its consequence on the performance of the bolometer. (orig.).

Quadrupolar interactions in non-cubic crystal and related extra heat capacities. Possible effects on a sapphire bolometer

International Nuclear Information System (INIS)

Bassou, M.; Rotter, M.; Bernier, M.; Chapellier, M.

1996-01-01

It is shown that in a non-cubic crystal, the extra heat capacity due to quadrupolar interaction of nuclear spins >1/2 could be much bigger than the phonon heat capacity when the temperature decreases. The possible coupling between quadrupolar and phonon heat reservoir via paramagnetic impurities is stressed. A NMR experiment done on sapphire is presented with an evaluation of the coupling between the two reservoirs and its consequence on the performance of the bolometer. (orig.)

Broadband non-polarizing terahertz beam splitters with variable split ratio

KAUST Repository

Wei, Minggui

2017-08-15

Seeking effective terahertz functional devices has always aroused extensive attention. Of particular interest is the terahertz beam splitter. Here, we have proposed, designed, manufactured, and tested a broadband non-polarizing terahertz beam splitter with a variable split ratio based on an all-dielectric metasurface. The metasurface was created by patterning a dielectric surface of the N-step phase gradient and etching to a few hundred micrometers. The conversion efficiency as high as 81% under the normal incidence at 0.7 THz was achieved. Meanwhile, such a splitter works well over a broad frequency range. The split ratio of the proposed design can be continuously tuned by simply shifting the metasurface, and the angle of emergences can also be easily adjusted by choosing the step of phase gradients. The proposed design is non-polarizing, and its performance is kept under different polarizations.

Broadband non-polarizing terahertz beam splitters with variable split ratio

Science.gov (United States)

Wei, Minggui; Xu, Quan; Wang, Qiu; Zhang, Xueqian; Li, Yanfeng; Gu, Jianqiang; Tian, Zhen; Zhang, Xixiang; Han, Jiaguang; Zhang, Weili

2017-08-01

Seeking effective terahertz functional devices has always aroused extensive attention. Of particular interest is the terahertz beam splitter. Here, we have proposed, designed, manufactured, and tested a broadband non-polarizing terahertz beam splitter with a variable split ratio based on an all-dielectric metasurface. The metasurface was created by patterning a dielectric surface of the N-step phase gradient and etching to a few hundred micrometers. The conversion efficiency as high as 81% under the normal incidence at 0.7 THz was achieved. Meanwhile, such a splitter works well over a broad frequency range. The split ratio of the proposed design can be continuously tuned by simply shifting the metasurface, and the angle of emergences can also be easily adjusted by choosing the step of phase gradients. The proposed design is non-polarizing, and its performance is kept under different polarizations.

Broadband non-polarizing terahertz beam splitters with variable split ratio

KAUST Repository

Wei, Minggui; Xu, Quan; Wang, Qiu; Zhang, Xueqian; Li, Yanfeng; Gu, Jianqiang; Tian, Zhen; Zhang, Xixiang; Han, Jiaguang; Zhang, Weili

2017-01-01

Seeking effective terahertz functional devices has always aroused extensive attention. Of particular interest is the terahertz beam splitter. Here, we have proposed, designed, manufactured, and tested a broadband non-polarizing terahertz beam splitter with a variable split ratio based on an all-dielectric metasurface. The metasurface was created by patterning a dielectric surface of the N-step phase gradient and etching to a few hundred micrometers. The conversion efficiency as high as 81% under the normal incidence at 0.7 THz was achieved. Meanwhile, such a splitter works well over a broad frequency range. The split ratio of the proposed design can be continuously tuned by simply shifting the metasurface, and the angle of emergences can also be easily adjusted by choosing the step of phase gradients. The proposed design is non-polarizing, and its performance is kept under different polarizations.

Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing.

Science.gov (United States)

Shih, Huan-Yu; Lee, Wei-Hao; Kao, Wei-Chung; Chuang, Yung-Chuan; Lin, Ray-Ming; Lin, Hsin-Chih; Shiojiri, Makoto; Chen, Miin-Jang

2017-01-03

Low-temperature epitaxial growth of AlN ultrathin films was realized by atomic layer deposition (ALD) together with the layer-by-layer, in-situ atomic layer annealing (ALA), instead of a high growth temperature which is needed in conventional epitaxial growth techniques. By applying the ALA with the Ar plasma treatment in each ALD cycle, the AlN thin film was converted dramatically from the amorphous phase to a single-crystalline epitaxial layer, at a low deposition temperature of 300 °C. The energy transferred from plasma not only provides the crystallization energy but also enhances the migration of adatoms and the removal of ligands, which significantly improve the crystallinity of the epitaxial layer. The X-ray diffraction reveals that the full width at half-maximum of the AlN (0002) rocking curve is only 144 arcsec in the AlN ultrathin epilayer with a thickness of only a few tens of nm. The high-resolution transmission electron microscopy also indicates the high-quality single-crystal hexagonal phase of the AlN epitaxial layer on the sapphire substrate. The result opens a window for further extension of the ALD applications from amorphous thin films to the high-quality low-temperature atomic layer epitaxy, which can be exploited in a variety of fields and applications in the near future.

Observation of non-classical correlations in sequential measurements of photon polarization

International Nuclear Information System (INIS)

Suzuki, Yutaro; Iinuma, Masataka; Hofmann, Holger F

2016-01-01

A sequential measurement of two non-commuting quantum observables results in a joint probability distribution for all output combinations that can be explained in terms of an initial joint quasi-probability of the non-commuting observables, modified by the resolution errors and back-action of the initial measurement. Here, we show that the error statistics of a sequential measurement of photon polarization performed at different measurement strengths can be described consistently by an imaginary correlation between the statistics of resolution and back-action. The experimental setup was designed to realize variable strength measurements with well-controlled imaginary correlation between the statistical errors caused by the initial measurement of diagonal polarizations, followed by a precise measurement of the horizontal/vertical polarization. We perform the experimental characterization of an elliptically polarized input state and show that the same complex joint probability distribution is obtained at any measurement strength. (paper)

Interfacial B-site atomic configuration in polar (111) and non-polar (001) SrIrO3/SrTiO3 heterostructures

Science.gov (United States)

Anderson, T. J.; Zhou, H.; Xie, L.; Podkaminer, J. P.; Patzner, J. J.; Ryu, S.; Pan, X. Q.; Eom, C. B.

2017-09-01

The precise control of interfacial atomic arrangement in ABO3 perovskite heterostructures is paramount, particularly in cases where the subsequent electronic properties of the material exhibit geometrical preferences along polar crystallographic directions that feature inevitably complex surface reconstructions. Here, we present the B-site interfacial structure in polar (111) and non-polar (001) SrIrO3/SrTiO3 interfaces. The heterostructures were examined using scanning transmission electron microscopy and synchrotron-based coherent Bragg rod analysis. Our results reveal the preference of B-site intermixing across the (111) interface due to the polarity-compensated SrTiO3 substrate surface prior to growth. By comparison, the intermixing at the non-polar (001) interface is negligible. This finding suggests that the intermixing may be necessary to mitigate epitaxy along heavily reconstructed and non-stoichiometric (111) perovskite surfaces. Furthermore, this preferential B-site configuration could allow the geometric design of the interfacial perovskite structure and chemistry to selectively engineer the correlated electronic states of the B-site d-orbital.

Interfacial B-site atomic configuration in polar (111 and non-polar (001 SrIrO3/SrTiO3 heterostructures

Directory of Open Access Journals (Sweden)

T. J. Anderson

2017-09-01

Full Text Available The precise control of interfacial atomic arrangement in ABO3 perovskite heterostructures is paramount, particularly in cases where the subsequent electronic properties of the material exhibit geometrical preferences along polar crystallographic directions that feature inevitably complex surface reconstructions. Here, we present the B-site interfacial structure in polar (111 and non-polar (001 SrIrO3/SrTiO3 interfaces. The heterostructures were examined using scanning transmission electron microscopy and synchrotron-based coherent Bragg rod analysis. Our results reveal the preference of B-site intermixing across the (111 interface due to the polarity-compensated SrTiO3 substrate surface prior to growth. By comparison, the intermixing at the non-polar (001 interface is negligible. This finding suggests that the intermixing may be necessary to mitigate epitaxy along heavily reconstructed and non-stoichiometric (111 perovskite surfaces. Furthermore, this preferential B-site configuration could allow the geometric design of the interfacial perovskite structure and chemistry to selectively engineer the correlated electronic states of the B-site d-orbital.

Structural and optical studies of GaN pn-junction with AlN buffer layer grown on Si (111) by RF plasma enhanced MBE

Energy Technology Data Exchange (ETDEWEB)

Yusoff, Mohd Zaki Mohd; Hassan, Zainuriah; Woei, Chin Che; Hassan, Haslan Abu; Abdullah, Mat Johar [Nano-Optoelectronics Research and Technology Laboratory School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia and Department of Applied Sciences Universiti Teknologi MARA (UiTM) 13500 Permatang Pauh, Penang (Malaysia); Department of Applied Sciences Universiti Teknologi MARA (UiTM) 13500 Permatang Pauh, Penang (Malaysia)

2012-06-29

GaN pn-junction grown on silicon substrates have been the focus in a number of recent reports and further effort is still necessary to improve its crystalline quality for practical applications. GaN has the high n-type background carrier concentration resulting from native defects commonly thought to be nitrogen vacancies. In this work, we present the growth of pn-junction of GaN on Si (111) substrate using RF plasma-enhanced molecular beam epitaxy (MBE). Both of the layers show uniformity with an average thickness of 0.709 {mu}m and 0.095 {mu}m for GaN and AlN layers, respectively. The XRD spectra indicate that no sign of cubic phase of GaN are found, so it is confirmed that the sample possessed hexagonal structure. It was found that all the allowed Raman optical phonon modes of GaN, i.e. the E2 (low), E1 (high) and A1 (LO) are clearly visible.

Growth of GaN on SiC/Si substrates using AlN buffer layer by hot-mesh CVD

International Nuclear Information System (INIS)

Tamura, Kazuyuki; Kuroki, Yuichiro; Yasui, Kanji; Suemitsu, Maki; Ito, Takashi; Endou, Tetsuro; Nakazawa, Hideki; Narita, Yuzuru; Takata, Masasuke; Akahane, Tadashi

2008-01-01

GaN films were grown on SiC/Si (111) substrates by hot-mesh chemical vapor deposition (CVD) using ammonia (NH 3 ) and trimetylgallium (TMG) under low V/III source gas ratio (NH 3 /TMG = 80). The SiC layer was grown by a carbonization process on the Si substrates using propane (C 3 H 8 ). The AlN layer was deposited as a buffer layer using NH 3 and trimetylaluminum (TMA). GaN films were formed and grown by the reaction between NH x radicals, generated on a tungsten hot mesh, and the TMG molecules. The GaN films with the AlN buffer layer showed better crystallinity and stronger near-band-edge emission compared to those without the AlN layer

Early and Late Retrieval of the ALN Removable Vena Cava Filter: Results from a Multicenter Study

International Nuclear Information System (INIS)

Pellerin, O.; Barral, F. G.; Lions, C.; Novelli, L.; Beregi, J. P.; Sapoval, M.

2008-01-01

Retrieval of removable inferior vena cava (IVC) filters in selected patients is widely practiced. The purpose of this multicenter study was to evaluate the feasibility and results of percutaneous removal of the ALN removable filter in a large patient cohort. Between November 2003 and June 2006, 123 consecutive patients were referred for percutaneous extraction of the ALN filter at three centers. The ALN filter is a removable filter that can be implanted through a femoral/jugular vein approach and extracted by the jugular vein approach. Filter removal was attempted after an implantation period of 93 ± 15 days (range, 6-722 days) through the right internal jugular vein approach using the dedicated extraction kit after control inferior vena cavography. Following filter removal, vena cavograms were obtained in all patients. Successful extraction was achieved in all but one case. Among these successful retrievals, additional manipulation using a femoral approach was needed when the apex of the filter was close to the IVC wall in two patients. No immediate IVC complications were observed according to the postimplantation cavography. Neither technical nor clinical differences between early and late filter retrieval were noticed. Our data confirm the safety of ALN filter retrieval up to 722 days after implantation. In infrequent cases, additional endovenous filter manipulation is needed to facilitate extraction.

Parity non-conservation in the capture of polarized thermal neutrons

DEFF Research Database (Denmark)

Warming, Inge Elisabeth

1969-01-01

The asymmetry in the intensity of γ-radiation following the capture of polarized thermal neutrons in 113Cd has been measured with Ge(Li) detectors. The result, A = (−0.6±1.8)×10−4, like that previously reported [1], gives no evidence for a non-zero effect.......The asymmetry in the intensity of γ-radiation following the capture of polarized thermal neutrons in 113Cd has been measured with Ge(Li) detectors. The result, A = (−0.6±1.8)×10−4, like that previously reported [1], gives no evidence for a non-zero effect....

Predicted energetics and properties of rare-earth ferrites films grown on cubic (1 1 1)- and hexagonal (0 0 0 1)-oriented substrates

International Nuclear Information System (INIS)

Zhao, Hong Jian; Chen, Xiang Ming; Xu, Changsong; Duan, Wenhui; Yang, Yurong; Bellaiche, L

2015-01-01

First-principles calculations are performed to compare the energetics of several phases, including hexagonal polar P6 3 cm and perovskite non-polar Pbnm-like states, of epitaxial RFeO 3 films (with R  =  Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er and Lu) grown on different cubic (1 1 1)- and hexagonal (0 0 0 1)-oriented substrates. The P6 3 cm phase is found to be the ground state for large enough in-plane lattice parameters in all investigated RFeO 3 films, and its polarization is tunable by the amount of epitaxial strain. Series of available substrates allowing the growth of hexagonal polar RFeO 3 films, as well as other phenomena of fundamental and technological importance (e.g. different ground states and coexistence between several phases) are also predicted. (paper)

Polarization contrast linear spectroscopies for cubic semiconductors under stress: macro- and micro-reflectance difference spectroscopies

Energy Technology Data Exchange (ETDEWEB)

Lastras-Martinez, L.F.; Balderas-Navarro, R.E.; Castro-Garcia, R.; Herrera-Jasso, R.; Lastras-Martinez, A. [Instituto de Investigacion en Comunicacion Optica, Universidad Autonoma de San Luis Potosi, Alvaro Obregon 64, 78000 San Luis Potosi, S.L.P. (Mexico); Chavira-Rodriguez, M. [Departamento de Fisico Matematicas, Universidad Autonoma de San Luis Potosi, Alvaro Obregon 64, 78000 San Luis Potosi, S.L.P. (Mexico)

2011-01-15

The technique to measure optical anisotropies (OA) in cubic semiconductors is termed either reflectance difference spectroscopy (RDS) or reflectance anisotropy spectroscopy (RAS). In this paper we report on the application of RDS/RAS to a number of cubic semiconductors. We discuss RD spectra of GaAs, Si, CdTe, GaP, InP and GaSb (001) surfaces, induced by an uniaxial stress applied along [110] crystal directions. We show that all RD spectra can be explained in terms of a phenomenological model based on a perturbative Hamiltonian. We further report on measurements of spatial-resolved RDS measurements of GaAs employing a newly developed micro-RD spectrometer with a spatial resolution of 5 {mu}m. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Broadband non-polarizing beam splitter based on guided mode resonance effect

Science.gov (United States)

Ma, Jian-Yong; Xu, Cheng; Qiang, Ying-Huai; Zhu, Ya-Bo

2011-10-01

A broadband non-polarizing beam splitter (NPBS) operating in the telecommunication C+L band is designed by using the guided mode resonance effect of periodic silicon-on-insulator (SOI) elements. It is shown that this double layer SOI structure can provide ~50/50 beam ratio with the maximum divergences between reflection and transmission being less than 8% over the spectrum of 1.4 μm~1.7 μm and 1% in the telecommunication band for both TE and TM polarizations. The physical basis of this broadband non-polarizing property is on the simultaneous excitation of the TE and TM strong modulation waveguide modes near the designed spectrum band. Meanwhile, the electric field distributions for both TE and TM polarizations verify the resonant origin of spectrum in the periodic SOI structure. Furthermore, it is demonstrated with our calculations that the beam splitter proposed here is tolerant to the deviations of incident angle and structure parameters, which make it very easy to be fabricated with current IC technology.

Oblique-angle sputtered AlN nanocolumnar layer as a buffer layer in GaN-based LED

International Nuclear Information System (INIS)

Chen, Lung-Chien; Tien, Ching-Ho; Liao, Wei-Chian; Luo, Yi-Min

2011-01-01

This work presents an aluminum nitride (AlN) nanocolumnar layer sputtered at various oblique angles and its application as a buffer layer for GaN-based light-emitting diodes (LEDs) that are fabricated on sapphire substrates. The OA-AlN nanocolumnar layer has a diameter of about 30-60 nm. The GaN-based LED structure is perpendicularly extended from the OA-AlN nanocolumnar layer. Then, the nanocolumnar structure is merged into p-GaN layer to form a mesa structure with a diameter of about 200-600 nm on the surface of the GaN-based LED. Moreover, optical characteristics of the LED were studied using photoluminescence, along with the blue-shifts observed as well. - Research highlights: → An AlN nanocolumnar buffer layer prepared by oblique-angle (OA) deposition. → GaN-based LED structures were grown on a sapphire substrate with an AlN nanocolumnar buffer layer. → The OA-AlN nanocolumnar layer has a diameter of about 30-60 nm.

Emerging methanol-tolerant AlN nanowire oxygen reduction electrocatalyst for alkaline direct methanol fuel cell.

Science.gov (United States)

Lei, M; Wang, J; Li, J R; Wang, Y G; Tang, H L; Wang, W J

2014-08-11

Replacing precious and nondurable Pt catalysts with cheap materials is a key issue for commercialization of fuel cells. In the case of oxygen reduction reaction (ORR) catalysts for direct methanol fuel cell (DMFC), the methanol tolerance is also an important concern. Here, we develop AlN nanowires with diameters of about 100-150 nm and the length up to 1 mm through crystal growth method. We find it is electrochemically stable in methanol-contained alkaline electrolyte. This novel material exhibits pronounced electrocatalytic activity with exchange current density of about 6.52 × 10(-8) A/cm(2). The single cell assembled with AlN nanowire cathodic electrode achieves a power density of 18.9 mW cm(-2). After being maintained at 100 mA cm(-2) for 48 h, the AlN nanowire-based single cell keeps 92.1% of the initial performance, which is in comparison with 54.5% for that assembled with Pt/C cathode. This discovery reveals a new type of metal nitride ORR catalyst that can be cheaply produced from crystal growth method.

Tailoring polarization of electromagnetically induced transparency based on non-centrosymmetric metasurfaces

Science.gov (United States)

Li, Hai-ming; Xue, Feng

2017-09-01

In this manuscript, tailoring polarization of analogy of electromagnetically induced transparency (EIT-like) based on non-centrosymmetric metasurfaces has been numerically and experimentally demonstrated. The EIT-like metamaterial is composed of a rectangle ring and two cut wires. The rectangle ring and the cut wire are chosen as the bright mode and the quasi-dark mode, respectively. Under the incident electromagnetic wave excitation, a polarization insensitive EIT-like transmission window can be observed at specific polarization angles. Within the transmission window, the phase steeply changes, which leads to the large group index. Tailoring polarization of EIT-like metamaterial with large group index at specific polarization angles may have potential application in slow light devices.

Molecular-beam epitaxial growth of insulating AlN on surface-controlled 6H-SiC substrate by HCl gas etching

International Nuclear Information System (INIS)

Onojima, Norio; Suda, Jun; Matsunami, Hiroyuki

2002-01-01

Insulating AlN layers were grown on surface-controlled 6H-SiC subtrates by molecular-beam epitaxy (MBE) using elemental Al and rf plasma-excited nitrogen (N*). HCl gas etching was introduced as an effective pretreatment method of substrate for MBE growth of AlN. 6H-SiC substrates pretreated by HCl gas etching had no surface polishing scratches and an atomically flat surface. In addition, evident ( 3 √x 3 √)R30 deg. surface reconstruction was observed even before thermal cleaning. AlN layers grown on this substrate had no defects related to surface polishing scratches and excellent insulating characteristics

Growth of GaN on SiC/Si substrates using AlN buffer layer by hot-mesh CVD

Energy Technology Data Exchange (ETDEWEB)

Tamura, Kazuyuki [Nagaoka University of Technology, Nagaoka 940-2188 (Japan)], E-mail: kazuyuki@stn.nagaokaut.ac.jp; Kuroki, Yuichiro; Yasui, Kanji [Nagaoka University of Technology, Nagaoka 940-2188 (Japan); Suemitsu, Maki; Ito, Takashi [Center of Interdisciplinary Research, Tohoku University, Sendai 980-8578 (Japan); Endou, Tetsuro [Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577 (Japan); Nakazawa, Hideki [Faculty of Science and Technology, Hirosaki University, Hirosaki 036-8561 (Japan); Narita, Yuzuru [Center of Interdisciplinary Research, Tohoku University, Sendai 980-8578 (Japan); Takata, Masasuke; Akahane, Tadashi [Nagaoka University of Technology, Nagaoka 940-2188 (Japan)

2008-01-15

GaN films were grown on SiC/Si (111) substrates by hot-mesh chemical vapor deposition (CVD) using ammonia (NH{sub 3}) and trimetylgallium (TMG) under low V/III source gas ratio (NH{sub 3}/TMG = 80). The SiC layer was grown by a carbonization process on the Si substrates using propane (C{sub 3}H{sub 8}). The AlN layer was deposited as a buffer layer using NH{sub 3} and trimetylaluminum (TMA). GaN films were formed and grown by the reaction between NH{sub x} radicals, generated on a tungsten hot mesh, and the TMG molecules. The GaN films with the AlN buffer layer showed better crystallinity and stronger near-band-edge emission compared to those without the AlN layer.

Chemical characterization by GC-MS and phytotoxic potential of non-polar and polar fractions of seeds of Dioteryx odorata (Aubl. Willd. from Venezuelan regions

Directory of Open Access Journals (Sweden)

Alberto de J. Oliveros-Bastidas

2013-01-01

Full Text Available Dipteryx odorata (Aubl. Willd. is a tall arboreal species native to Central and Northern South America. This paper describes the chemical characterization and phytotoxic potential of polar and non-polar extracts from D. odorata seeds. Structural determinations were accomplished by chemical derivatization and analyzed by GC/MS. The chemical composition of the non-polar fraction (hexane and dichloromethane presented fatty acids as major constituent. Medium polar and polar fractions (ethyl acetate and ethanol: water contained carboxylic acid and high 6,7-Dyhidroxycoumarin-β-D-glucopyranoside content, not previously reported for seeds of D. odorata. Extracts showed a significant level of phytotoxic activity, correlated to the content of coumarin derivatives, predominantly in the polar fraction.

Optical properties of aluminium-gallium-nitride semiconductors; Optische Eigenschaften von Aluminium-Galliumnitrid-Halbleitern

Energy Technology Data Exchange (ETDEWEB)

Roeppischer, Marcus

2011-08-17

In this work fundamental optical properties of AlN, GaN and their alloys are presented. Spectroscopic ellipsometry from the near infrared (NIR) to the vacuum-ultraviolet (VUV) spectral region was the main tool to investigate these properties. The complete dielectric function (DF) of cubic as well as hexagonal GaN and AlN in the range between 0.6 eV and 20 eV is shown here, for the first time. A layer model including surface roughness and buffer layers was used to separate the DF of the investigated layer from the measured pseudo-DF. Afterwards all absorption structures in the DF's are discussed in detail. Due to the comparison with calculated bandstructures these absorption structures could be connected to interband transitions at high symmetry points in the Brillouin zone (BZ). Within this analysis similarities and differences between GaN and AlN are discussed. For zincblende (zb) AlN a pronounced absorption tail below the direct band gap transition was detected. This behaviour is typical for a phonon-assisted indirect absorption. In contrast zb-GaN exhibits a clear direct absorption. Furthermore, a change in the energetic position of the two main interband absorptions E1 and E2 at the L- and X-point of the BZ was found. A detailed analysis of the anisotropic fundamental band gap of hexagonal AlN offers a interchange of the two topmost valance bands at the BZ center compared to GaN. Due to this permutation the fundamental band edge of wurtzit (wz) AlN is only visible for parallel polarized light, while for GaN it can be detect in the perpendicular configuration. By analysing the energetic position of the three excitonic transitions the crystal-field- and spin-orbit-splitting were defined to be {delta}{sub cr}=-226 meV and {delta}{sub so}=14 meV. In addition, the energetic positions for these transitions at T=15 K are 6.0465 eV, 6.2694 eV and 6.2775 eV. The comparison between measurements at room and low temperature shows an energetic shift for both absorption

The influence of non-polar lipids on tear film dynamics

KAUST Repository

Bruna, M.; Breward, C.  J.  W.

2014-01-01

© 2014 Cambridge University Press. In this paper we examine the effect that physiological non-polar lipids, residing on the surface of an aqueous tear film, have on the film evolution. In our model we track the evolution of the thickness of the non

Compensation of non-ideal beam splitter polarization distortion effect in Michelson interferometer

Science.gov (United States)

Liu, Yeng-Cheng; Lo, Yu-Lung; Liao, Chia-Chi

2016-02-01

A composite optical structure consisting of two quarter-wave plates and a single half-wave plate is proposed for compensating for the polarization distortion induced by a non-ideal beam splitter in a Michelson interferometer. In the proposed approach, the optimal orientations of the optical components within the polarization compensator are determined using a genetic algorithm (GA) such that the beam splitter can be treated as a free-space medium and modeled using a unit Mueller matrix accordingly. Two implementations of the proposed polarization controller are presented. In the first case, the compensator is placed in the output arm of Michelson interferometer such that the state of polarization of the interfered output light is equal to that of the input light. However, in this configuration, the polarization effects induced by the beam splitter in the two arms of the interferometer structure cannot be separately addressed. Consequently, in the second case, compensator structures are placed in the Michelson interferometer for compensation on both the scanning and reference beams. The practical feasibility of the proposed approach is introduced by considering a Mueller polarization-sensitive (PS) optical coherence tomography (OCT) structure with three polarization controllers in the input, reference and sample arms, respectively. In general, the results presented in this study show that the proposed polarization controller provides an effective and experimentally-straightforward means of compensating for the polarization distortion effects induced by the non-ideal beam splitters in Michelson interferometers and Mueller PS-OCT structures.

Regularizing cubic open Neveu-Schwarz string field theory

International Nuclear Information System (INIS)

Berkovits, Nathan; Siegel, Warren

2009-01-01

After introducing non-minimal variables, the midpoint insertion of Y Y-bar in cubic open Neveu-Schwarz string field theory can be replaced with an operator N ρ depending on a constant parameter ρ. As in cubic open superstring field theory using the pure spinor formalism, the operator N ρ is invertible and is equal to 1 up to a BRST-trivial quantity. So unlike the linearized equation of motion Y Y-bar QV = 0 which requires truncation of the Hilbert space in order to imply QV = 0, the linearized equation N ρ QV = 0 directly implies QV = 0.

Optical, Structural and Paramagnetic Properties of Eu-Doped Ternary Sulfides ALnS2 (A = Na, K, Rb; Ln = La, Gd, Lu, Y

Directory of Open Access Journals (Sweden)

Vítězslav Jarý

2015-10-01

Full Text Available Eu-doped ternary sulfides of general formula ALnS2 (A = Na, K, Rb; Ln = La, Gd, Lu, Y are presented as a novel interesting material family which may find usage as X-ray phosphors or solid state white light emitting diode (LED lighting. Samples were synthesized in the form of transparent crystalline hexagonal platelets by chemical reaction under the flow of hydrogen sulfide. Their physical properties were investigated by means of X-ray diffraction, time-resolved photoluminescence spectroscopy, electron paramagnetic resonance, and X-ray excited fluorescence. Corresponding characteristics, including absorption, radioluminescence, photoluminescence excitation and emission spectra, and decay kinetics curves, were measured and evaluated in a broad temperature range (8–800 K. Calculations including quantum local crystal field potential and spin-Hamiltonian for a paramagnetic particle in D3d local symmetry and phenomenological model dealing with excited state dynamics were performed to explain the experimentally observed features. Based on the results, an energy diagram of lanthanide energy levels in KLuS2 is proposed. Color model xy-coordinates are used to compare effects of dopants on the resulting spectrum. The application potential of the mentioned compounds in the field of white LED solid state lighting or X-ray phosphors is thoroughly discussed.

Broadband non-polarizing beam splitter based on guided mode resonance effect

International Nuclear Information System (INIS)

Ma Jian-Yong; Xu Cheng; Qiang Ying-Huai; Zhu Ya-Bo

2011-01-01

A broadband non-polarizing beam splitter (NPBS) operating in the telecommunication C+L band is designed by using the guided mode resonance effect of periodic silicon-on-insulator (SOI) elements. It is shown that this double layer SOI structure can provide ∼50/50 beam ratio with the maximum divergences between reflection and transmission being less than 8% over the spectrum of 1.4 μm∼1.7 μm and 1% in the telecommunication band for both TE and TM polarizations. The physical basis of this broadband non-polarizing property is on the simultaneous excitation of the TE and TM strong modulation waveguide modes near the designed spectrum band. Meanwhile, the electric field distributions for both TE and TM polarizations verify the resonant origin of spectrum in the periodic SOI structure. Furthermore, it is demonstrated with our calculations that the beam splitter proposed here is tolerant to the deviations of incident angle and structure parameters, which make it very easy to be fabricated with current IC technology. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

High energy ion irradiated III-N semiconductors (AlN, GaN, InN): study of point defect and extended defect creation

International Nuclear Information System (INIS)

Sall, Mamour

2013-01-01

Nitride semiconductors III N (AlN, GaN, InN) have interesting properties for micro-and opto-electronic applications. In use, they may be subjected to different types of radiation in a wide range of energy. In AlN, initially considered insensitive to electronic excitations (Se), we have demonstrated a novel type of synergy between Se and nuclear collisions (Sn) for the creation of defects absorbing at 4.7 eV. In addition, another effect of Se is highlighted in AlN: climb of screw dislocations under the influence of Se, at high fluence. In GaN, two mechanisms can explain the creation of defects absorbing at 2.8 eV: a synergy between Se and Sn, or a creation only due to Sn but with a strong effect of the size of displacement cascades. The study, by TEM, of the effects of Se in the three materials, exhibits behaviors highly dependent on the material while they all belong to the same family with the same atomic structure. Under monoatomic ion irradiations (velocity between 0.4 and 5 MeV/u), while discontinuous tracks are observed in GaN and InN, no track is observed in AlN with the highest electronic stopping power (33 keV/nm). Only fullerene clusters produce tracks in AlN. The inelastic thermal spike model was used to calculate the energies required to produce track in AlN, GaN and InN, they are 4.2 eV/atom, 1.5 eV/atom and 0.8 eV/atom, respectively. This sensitivity difference according to Se, also occurs at high fluence. (author)

An Experimental Study on Heat Conduction and Thermal Contact Resistance for the AlN Flake

Directory of Open Access Journals (Sweden)

Huann-Ming Chou

2013-01-01

Full Text Available The electrical technology has been a fast development over the past decades. Moreover, the tendency of microelements and dense division multiplex is significantly for the electrical industries. Therefore, the high thermal conductible and electrical insulating device will be popular and important. It is well known that AlN still maintains stablility in the high temperature. This is quite attractive for the research and development department. Moreover, the thermal conduct coefficient of AlN is several times larger than the others. Therefore, it has been thought to play an important role for the radiator of heat source in the future. Therefore, this paper is focused on the studies of heat conduction and thermal contact resistance between the AlN flake and the copper specimens. The heating temperatures and the contact pressures were selected as the experimental parameters. According to the experimental results, the materials are soft and the real contact areas between the interfaces significantly increase under higher temperatures. As a result, the thermal contact resistance significantly decreases and the heat transfer rate increases with increasing the heating temperature or the contact pressures.

Structural stabilities and electronic properties of Mg28-nAln clusters: A first-principles study

Directory of Open Access Journals (Sweden)

Bao-Juan Lu

2017-09-01

Full Text Available In this paper, we have constructed the alloy configurations of Mg28-nAln by replacing atoms at various possible positions, starting from the stable structures of Mg28 and Al28 clusters. According to the symmetry of the cluster structure, the isomers of these initial structures have been screened with the congruence check, which would reduce computational hours and improve efficiency. Using the first-principles method, the structural evolution, mixing behavior and electronic properties of Mg28-nAln clusters are investigated for all compositions. We conclude that Al atoms prefer to reside in the central positions of Mg−Al clusters and Mg atoms tend to occupy the peripheral location. The negative mixing enthalpies imply the stabilities of these Mg-Al clusters and thus possible applications in catalysis and hydrogen storage materials. Among Mg28-nAln clusters, Mg24Al4, Mg21Al7, Mg14Al14, Mg26Al2 and Mg27Al1 present relatively high thermodynamic stabilities, and the electronic properties of these stable structures are discussed with the charge distributions around the Fermi level.

AFM imaging and fractal analysis of surface roughness of AlN epilayers on sapphire substrates

Energy Technology Data Exchange (ETDEWEB)

Dallaeva, Dinara, E-mail: dinara.dallaeva@yandex.ru [Brno University of Technology, Faculty of Electrical Engineering and Communication, Physics Department, Technická 8, 616 00 Brno (Czech Republic); Ţălu, Ştefan [Technical University of Cluj-Napoca, Faculty of Mechanical Engineering, Department of AET, Discipline of Descriptive Geometry and Engineering Graphics, 103-105 B-dul Muncii Street, Cluj-Napoca 400641, Cluj (Romania); Stach, Sebastian [University of Silesia, Faculty of Computer Science and Materials Science, Institute of Informatics, Department of Biomedical Computer Systems, ul. Będzińska 39, 41-205 Sosnowiec (Poland); Škarvada, Pavel; Tománek, Pavel; Grmela, Lubomír [Brno University of Technology, Faculty of Electrical Engineering and Communication, Physics Department, Technická 8, 616 00 Brno (Czech Republic)

2014-09-01

Graphical abstract: - Highlights: • We determined the complexity of 3D surface roughness of aluminum nitride layers. • We used atomic force microscopy and analyzed their fractal geometry. • We determined the fractal dimension of surface roughness of aluminum nitride layers. • We determined the dependence of layer morphology on substrate temperature. - Abstract: The paper deals with AFM imaging and characterization of 3D surface morphology of aluminum nitride (AlN) epilayers on sapphire substrates prepared by magnetron sputtering. Due to the effect of temperature changes on epilayer's surface during the fabrication, a surface morphology is studied by combination of atomic force microscopy (AFM) and fractal analysis methods. Both methods are useful tools that may assist manufacturers in developing and fabricating AlN thin films with optimal surface characteristics. Furthermore, they provide different yet complementary information to that offered by traditional surface statistical parameters. This combination is used for the first time for measurement on AlN epilayers on sapphire substrates, and provides the overall 3D morphology of the sample surfaces (by AFM imaging), and reveals fractal characteristics in the surface morphology (fractal analysis)

Growth dynamics of reactive-sputtering-deposited AlN films

International Nuclear Information System (INIS)

Auger, M.A.; Vazquez, L.; Sanchez, O.; Jergel, M.; Cuerno, R.; Castro, M.

2005-01-01

We have studied the surface kinetic roughening of AlN films grown on Si(100) substrates by dc reactive sputtering within the framework of the dynamic scaling theory. Films deposited under the same experimental conditions for different growth times were analyzed by atomic force microscopy and x-ray diffraction. The AlN films display a (002) preferred orientation. We have found two growth regimes with a crossover time of 36 min. In the first regime, the growth dynamics is unstable and the films present two types of textured domains, well textured and randomly oriented, respectively. In contrast, in the second regime the films are homogeneous and well textured, leading to a relative stabilization of the surface roughness characterized by a growth exponent β=0.37±0.03. In this regime a superrough scaling behavior is found with the following exponents: (i) Global exponents: roughness exponent α=1.2±0.2 and β=0.37±0.03 and coarsening exponent 1/z=0.32±0.05; (ii) local exponents: α loc =1, β loc =0.32±0.01. The differences between the growth modes are found to be related to the different main growth mechanisms dominating their growth dynamics: sticking anisotropy and shadowing, respectively

Comparison of methods for calculating thermodynamic properties of binary mixtures in the sub and super critical state: Lee-Kesler and cubic equations of state for binary mixtures containing either CO2 or H2S

International Nuclear Information System (INIS)

Yang, Jyisy; Griffiths, Peter R.; Goodwin, Anthony R.H.

2003-01-01

The (ρ,T,p) and (vapor + liquid) equilibria for fluid mixtures containing either CO 2 or H 2 S have been determined from 13 equations of state. The estimated values have been compared with published experimental results. CO 2 and H 2 S were used to represent non-polar and polar fluids, respectively. The equations of state investigated were as follows: (a) the Lee-Kesler equation; (b) two equations that included new reference fluids for the Lee-Kesler method; (c) three so-called extended equations of state; and (d) seven cubic equations of state. After adjustment of the binary interaction parameters the predicted values differed from the experimental data by about 0.8% for CO 2 mixtures while for H 2 S mixtures the uncertainty was about ±2.8%. Somewhat larger errors, although still lower than ±5%, were obtained for co-existing phase densities; the Lee-Kesler method provided results of the highest accuracy. The cubic equations proposed by Schmidt and Wenzel and Valderrama provide the most reliable predictions of both single and co-existing phase densities. Comparison of the predicted (vapor + liquid) equilibrium with experiment shows that each of the seven cubic equations provides results of similar accuracy and all within ±6%

Engineering of nearly strain-free ZnO films on Si(1 1 1) by tuning AlN buffer thickness

International Nuclear Information System (INIS)

Venkatachalapathy, Vishnukanthan; Galeckas, Augustinas; Lee, In-Hwan; Kuznetsov, Andrej Yu.

2012-01-01

ZnO properties were investigated as a function of AlN buffer layer thickness (0–100 nm) in ZnO/AlN/Si(1 1 1) structures grown by metal organic vapor phase epitaxy. A significant improvement of ZnO film crystallinity by tuning AlN buffer thickness was confirmed by x-ray diffraction, topography and photoluminescence measurements. An optimal AlN buffer layer thickness of 50 nm is defined, which allows for growth of nearly strain-free ZnO films. The presence of free excitons at 10 K suggests high crystal quality for all ZnO samples grown on AlN/Si(1 1 1) templates. The intensities of neutral and ionized donor bound exciton lines are found to correlate with the in-plane and out-of-plane strain in the films, respectively.

Engineering of nearly strain-free ZnO films on Si(1 1 1) by tuning AlN buffer thickness

Energy Technology Data Exchange (ETDEWEB)

Venkatachalapathy, Vishnukanthan, E-mail: vishnukanthan.venkatachalapathy@smn.uio.no [Department of Physics/Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, NO-0316 Oslo (Norway); Galeckas, Augustinas [Department of Physics/Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, NO-0316 Oslo (Norway); Lee, In-Hwan [School of Advanced Materials Engineering, Research Centre for Advanced Materials Development (RCAMD), Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Kuznetsov, Andrej Yu. [Department of Physics/Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, NO-0316 Oslo (Norway)

2012-05-15

ZnO properties were investigated as a function of AlN buffer layer thickness (0-100 nm) in ZnO/AlN/Si(1 1 1) structures grown by metal organic vapor phase epitaxy. A significant improvement of ZnO film crystallinity by tuning AlN buffer thickness was confirmed by x-ray diffraction, topography and photoluminescence measurements. An optimal AlN buffer layer thickness of 50 nm is defined, which allows for growth of nearly strain-free ZnO films. The presence of free excitons at 10 K suggests high crystal quality for all ZnO samples grown on AlN/Si(1 1 1) templates. The intensities of neutral and ionized donor bound exciton lines are found to correlate with the in-plane and out-of-plane strain in the films, respectively.

Luminescence dynamics in AlGaN with AlN content of 20%

KAUST Repository

Soltani, Sonia; Bouzidi, Mouhamed; Touré , Alhousseynou; Gerhard, Marina; Halidou, Ibrahim; Chine, Zied; El Jani, Belgacem; Shakfa, Mohammad Khaled

2016-01-01

Optical properties and carrier dynamics of an AlGaN layer with an AlN content of 20% have been studied using time-resolved photoluminescence (TR-PL). Despite the high density of defects due to the relatively high AlN content, an intense PL emission from the sample has been detected. Low-temperature PL spectra exhibit several features, accompanied by a strong emission-wavelength dependence of the PL decay time. A significant red-shift of more than 200 meV from the band edge is recorded for the PL emission from localized states. Temperature-dependent PL spectra of the sample are dominated by the emission from localized states and, furthermore, show a relatively slight decrease by almost an order of magnitude with increasing temperature from 45 to 300 K. Our observations indicate strong, spatial localization effects of carriers, resulting in an increase in the radiative recombination rate.

Luminescence dynamics in AlGaN with AlN content of 20%

KAUST Repository

Soltani, Sonia

2016-12-15

Optical properties and carrier dynamics of an AlGaN layer with an AlN content of 20% have been studied using time-resolved photoluminescence (TR-PL). Despite the high density of defects due to the relatively high AlN content, an intense PL emission from the sample has been detected. Low-temperature PL spectra exhibit several features, accompanied by a strong emission-wavelength dependence of the PL decay time. A significant red-shift of more than 200 meV from the band edge is recorded for the PL emission from localized states. Temperature-dependent PL spectra of the sample are dominated by the emission from localized states and, furthermore, show a relatively slight decrease by almost an order of magnitude with increasing temperature from 45 to 300 K. Our observations indicate strong, spatial localization effects of carriers, resulting in an increase in the radiative recombination rate.

Statistical nature of non-Gaussianity from cubic order primordial perturbations: CMB map simulations and genus statistic

International Nuclear Information System (INIS)

Chingangbam, Pravabati; Park, Changbom

2009-01-01

We simulate CMB maps including non-Gaussianity arising from cubic order perturbations of the primordial gravitational potential, characterized by the non-linearity parameter g NL . The maps are used to study the characteristic nature of the resulting non-Gaussian temperature fluctuations. We measure the genus and investigate how it deviates from Gaussian shape as a function of g NL and smoothing scale. We find that the deviation of the non-Gaussian genus curve from the Gaussian one has an antisymmetric, sine function like shape, implying more hot and more cold spots for g NL > 0 and less of both for g NL NL and also exhibits mild increase as the smoothing scale increases. We further study other statistics derived from the genus, namely, the number of hot spots, the number of cold spots, combined number of hot and cold spots and the slope of the genus curve at mean temperature fluctuation. We find that these observables carry signatures of g NL that are clearly distinct from the quadratic order perturbations, encoded in the parameter f NL . Hence they can be very useful tools for distinguishing not only between non-Gaussian temperature fluctuations and Gaussian ones but also between g NL and f NL type non-Gaussianities

Polarization singularities of optical fields caused by structural dislocations in crystals

International Nuclear Information System (INIS)

Savaryn, V; Vasylkiv, Yu; Krupych, O; Skab, I; Vlokh, R

2013-01-01

We analyze polarization singularities of optical beams that propagate through crystals possessing structural dislocations. We show that screw dislocations of crystalline structure can lead to the appearance of purely screw-type dislocations of light wavefronts. This can happen only in crystals that belong to trigonal and cubic systems. These polarization singularities will give rise to optical vortices with the topological charge equal to ±1, whenever a crystal sample is placed between crossed circular polarizers. We have also found that edge dislocations present in the cubic and trigonal crystals, with the Burgers vector perpendicular to the three-fold symmetry axes, can impose mixed screw-edge dislocations in the wavefronts of optical beams and generate singly charged optical vortices. The results of our analysis can be applied for detecting and identifying dislocations of different types available in crystals. (paper)

The Exact Limit of Some Cubic Towers

DEFF Research Database (Denmark)

Anbar Meidl, Nurdagül; Beelen, Peter; Nguyen, Nhut

2017-01-01

Recently, a new explicit tower of function fields was introduced by Bassa, Beelen, Garcia and Stichtenoth (BBGS). This resulted in currently the best known lower bound for Ihara’s constant in the case of non-prime finite fields. In particular over cubic fields, the tower’s limit is at least as go...

Extended analysis of the frequency dependence of the admittance of MIS structures with pulsed-laser-deposited AlN films

Energy Technology Data Exchange (ETDEWEB)

Simeonov, S; Bakalova, S; Szekeres, A; Kafedjiijska, E [Georgi Nadjakov Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 1784 Sofia (Bulgaria); Grigorescu, S; Socol, G; Mihailescu, I N [Lasers Department, National Institute for Lasers, Plasma and Radiation Physics, PO Box MG-54, RO-77125, Bucharest-Magurele (Romania)], E-mail: sbakalova@issp.bas.bg

2008-05-01

MIS structures with AlN films deposited on p-Si by pulsed laser deposition were prepared and admittance measurements were carried out in the frequency range of 100 Hz - 10 MHz. The density of traps in the AlN film and at the AlN/Si interface was evaluated using the electrical characteristics obtained, and the hopping mechanism of charge transport was determined from the dispersion of the a.c. conductance.

Design and Optimization of AlN based RF MEMS Switches

Science.gov (United States)

Hasan Ziko, Mehadi; Koel, Ants

2018-05-01

Radio frequency microelectromechanical system (RF MEMS) switch technology might have potential to replace the semiconductor technology in future communication systems as well as communication satellites, wireless and mobile phones. This study is to explore the possibilities of RF MEMS switch design and optimization with aluminium nitride (AlN) thin film as the piezoelectric actuation material. Achieving low actuation voltage and high contact force with optimal geometry using the principle of piezoelectric effect is the main motivation for this research. Analytical and numerical modelling of single beam type RF MEMS switch used to analyse the design parameters and optimize them for the minimum actuation voltage and high contact force. An analytical model using isotropic AlN material properties used to obtain the optimal parameters. The optimized geometry of the device length, width and thickness are 2000 µm, 500 µm and 0.6 µm respectively obtained for the single beam RF MEMS switch. Low actuation voltage and high contact force with optimal geometry are less than 2 Vand 100 µN obtained by analytical analysis. Additionally, the single beam RF MEMS switch are optimized and validated by comparing the analytical and finite element modelling (FEM) analysis.

Alleviating polarity-conflict at the heterointerfaces of KTaO3/GdScO3 polar complex-oxides

International Nuclear Information System (INIS)

Thompson, J.; Nichols, J.; Connell, J. G.; Seo, S. S. A.; Hwang, J.; Stemmer, S.

2014-01-01

We have synthesized and investigated the heterointerfaces of KTaO 3 (KTO) and GdScO 3 (GSO), which are both polar complex-oxides along the pseudo-cubic [001] direction. Since their layers have the same, conflicting net charges at interfaces, i.e., KO(−1)/ScO 2 (−1) or TaO 2 (+1)/GdO(+1), forming the heterointerface of KTO/GSO should be forbidden due to strong Coulomb repulsion, the so-called polarity conflict. However, we have discovered that atomic reconstruction occurs at the heterointerfaces between KTO thin-films and GSO substrates, which effectively alleviates the polarity conflict without destroying the hetero-epitaxy. Our result demonstrates one of the important ways to create artificial heterostructures from polar complex-oxides.

A first-principles study of the SCN− chemisorption on the surface of AlN, AlP, and BP nanotubes

International Nuclear Information System (INIS)

Soltani, Alireza; Taghartapeh, Mohammad Ramezani; Mighani, Hossein; Pahlevani, Amin Allah; Mashkoor, Reza

2012-01-01

Graphical abstract: Adsorption properties of SCN − on AlN, AlP, and BP nanotubes based on density functional theory. ▶ We demonstrate the most stable configurations (N-side) of SCN − on AlN, AlP, and BP nanotubes models. Highlights: ► The SCN − Adsorption on surface of AlN, AlP, and BP nanotubes were studied via density functional theory (DFT). ► The interaction of SCN − on the electronic properties and the NBO charge distribution of mentioned configurations are investigated. ► The studies suggest that the adsorption energies of SCN − on AlPNT is most notable in comparison with AlNNT and BPNT. - Abstract: We have performed first-principles calculations to explore the adsorption behavior of the SCN − on electronic properties of AlN, AlP, and BP nanotubes. The adsorption value of SCN − for the most stable formation on the AlPNT is about −318.16 kJ mol −1 , which is reason via the chemisorptions of SCN anion. The computed density of states (DOS) indicates that a notable orbital hybridization take place between SCN − and AlP nanotube in adsorption process. Finally, the AlP nanotube can be used to design as useful sensor for nanodevice applications.

Piezoelectricity and rotostriction through polar and non-polar coupled instabilities in bismuth-based piezoceramics.

Science.gov (United States)

Acosta, Matias; Schmitt, Ljubomira A; Cazorla, Claudio; Studer, Andrew; Zintler, Alexander; Glaum, Julia; Kleebe, Hans-Joachim; Donner, Wolfgang; Hoffman, Mark; Rödel, Jürgen; Hinterstein, Manuel

2016-07-01

Coupling of order parameters provides a means to tune functionality in advanced materials including multiferroics, superconductors, and ionic conductors. We demonstrate that the response of a frustrated ferroelectric state leads to coupling between order parameters under electric field depending on grain orientation. The strain of grains oriented along a specific crystallographic direction, 〈h00〉, is caused by converse piezoelectricity originating from a ferrodistortive tetragonal phase. For 〈hhh〉 oriented grains, the strain results from converse piezoelectricity and rotostriction, as indicated by an antiferrodistortive instability that promotes octahedral tilting in a rhombohedral phase. Both strain mechanisms combined lead to a colossal local strain of (2.4 ± 0.1) % and indicate coupling between oxygen octahedral tilting and polarization, here termed "rotopolarization". These findings were confirmed with electromechanical experiments, in situ neutron diffraction, and in situ transmission electron microscopy in 0.75Bi1/2Na1/2TiO3-0.25SrTiO3. This work demonstrates that polar and non-polar instabilities can cooperate to provide colossal functional responses.

Electrical and materials properties of AlN/ HfO{sub 2} high-k stack with a metal gate

Energy Technology Data Exchange (ETDEWEB)

Reid, Kimberly G. [Tokyo Electron U.S., 14338 FM 1826, Austin, TX 78737 (United States)], E-mail: kim@ireid.com; Dip, Anthony [Tokyo Electron U.S., 2400 Grove Blvd., Austin, TX 78747 (United States)], E-mail: anthony.dip@us.tel.com; Sasaki, Sadao [Tokyo Electron U.S. (United States)], E-mail: Sadao.sasaki@us.tel.com; Triyoso, Dina [Freescale Semiconductor Inc., 3501 Ed Bluestein Blvd, Austin, TX 78721 (United States)], E-mail: Dina.Triyoso@freescale.com; Samavedam, Sri [Freescale Semiconductor Inc., 3501 Ed Bluestein Blvd, Austin, TX 78721 (United States)], E-mail: Sri.Samavedam@freescale.com; Gilmer, David [SEMATECH 2706 Montopolis Drive, Austin, TX 78741 (United States)], E-mail: David.Gilmer@sematech.org; Gondran, Carolyn F.H. [Process Characterization Laboratory, ATDF/SEMATECH, 2706 Montopolis Drive, Austin, Texas 78741 (United States)], E-mail: Carolyn.Gondran@atdf.com

2009-02-27

In this study, aluminum nitride (AlN) was grown by molecular layer deposition on HfO{sub 2} that had been deposited on 200 mm Si (100) substrates. The AlN was grown on HfO{sub 2} using sequential exposures of trimethyl-aluminum and ammonia (NH{sub 3}) in a batch vertical furnace. Excellent thickness uniformity on test wafers from the top of the furnace to the bottom of the furnace (across the furnace load) was obtained. The equivalent oxide thickness was 16.5-18.8 A for the AlN/HfO{sub 2} stack on patterned device wafers with a molybdenum oxynitride metal gate with leakage current densities from low 10{sup -5} to mid 10{sup -6} A/cm{sup 2} at threshold voltage minus one volt. There was no change in the work function with the AlN cap on HfO{sub 2} with the MoN metal gate, even with a 1000 deg. C anneal.

Estudo da viabilidade de obtenção de cerâmicas de SiC por infiltração espontânea de misturas eutéticas de Y2O3-AlN, Y2O3-Al2O3, R2O3-AlN Study of the viability to produce SiC ceramics by Y2O3-AlN, Y2O3-Al2O3, R2O3-AlN spontaneous infiltration

Directory of Open Access Journals (Sweden)

G. C. R. Garcia

2008-06-01

Full Text Available As cerâmicas de carbeto de silício, SiC, apresentam excelentes propriedades quando obtidas por infiltração de determinados líquidos. Na infiltração o tempo de contato entre o líquido e o SiC a temperaturas elevadas é muito curto, diminuindo a probabilidade de formação dos produtos gasosos que interferem negativamente na resistência da peça final, como ocorre na sinterização via fase líquida. O objetivo deste trabalho é mostrar uma correlação entre molhabilidade e capacidade de infiltração de alguns aditivos em compactos de SiC. Foram preparados compactos de SiC por prensagem isostática a frio e posterior pré-sinterização via fase sólida. Nesses compactos foram infiltradas misturas de Y2O3-AlN, Y2O3-Al2O3, R2O3-AlN, nas composições eutéticas, 10 ºC acima da temperatura de fusão das respectivas misturas por 4, 8 e 12 min. Após infiltração, as amostras foram analisadas quanto à densidade aparente e real, fases cristalinas, microestrutura e grau de infiltração, sendo que as amostras infiltradas com Y2O3-AlN apresentaram melhores resultados.Silicon carbide ceramics, SiC, obtained by liquid infiltration have shown excellent properties. In infiltration process the contact time of the liquid with SiC at elevated temperature is short, decreasing the probability to form gaseous products that contribute negatively in the final product properties. This phenomenon occurs during SiC liquid phase sintering. The purpose of the present study was to investigate the correlation between wettability and infiltration tendency of some additives in SiC compacts. SiC compacts were prepared by cold isostatic pressing followed by solid phase pre-sintering. Into the compacts were introduced Y2O3-AlN, Y2O3-Al2O3, R2O3-AlN liquids with eutectic compositions at a temperature 10 ºC higher than the melting point of each mixture for 4, 8 and 12 min. Before infiltration, the samples were analyzed by determining densities, crystalline phases

Polarization control of non-diffractive helical optical beams through subwavelength metallic apertures

International Nuclear Information System (INIS)

Lombard, E; Genet, C; Ebbesen, T W; Drezet, A

2010-01-01

We demonstrate experimentally a simple method for preparing non-diffractive vectorial optical beams that can display wave-front helicity. This method is based on space-variant modifications of the polarization of an optical beam transmitted through subwavelength annular rings perforating opaque metal films. We show how the description of the optical properties of such structures must account for the vectorial character of the polarization and how, in turn, these properties can be controlled by straightforward sequences of preparation and analysis of polarization states.

A local cubic smoothing in an adaptation mode

International Nuclear Information System (INIS)

Dikoussar, N.D.

2001-01-01

A new approach to a local curve approximation and the smoothing is proposed. The relation between curve points is defined using a special cross-ratio weight functions. The coordinates of three curve points are used as parameters for both the weight functions and the tree-point cubic model (TPS). A very simple in computing and stable to random errors cubic smoother in an adaptation mode (LOCUS) is constructed. The free parameter of TPS is estimated independently of the fixed parameters by recursion with the effective error suppression and can be controlled by the cross-ratio parameters. Efficiency and the noise stability of the algorithm are confirmed by examples and by comparison with other known non-parametric smoothers

Tuning the polarization-induced free hole density in nanowires graded from GaN to AlN

Science.gov (United States)

Golam Sarwar, A. T. M.; Carnevale, Santino D.; Kent, Thomas F.; Yang, Fan; McComb, David W.; Myers, Roberto C.

2015-01-01

We report a systematic study of p-type polarization-induced doping in graded AlGaN nanowire light emitting diodes grown on silicon wafers by plasma-assisted molecular beam epitaxy. The composition gradient in the p-type base is varied in a set of samples from 0.7%Al/nm to 4.95%Al/nm corresponding to negative bound polarization charge densities of 2.2 × 1018 cm-3 to 1.6 × 1019 cm-3. Capacitance measurements and energy band modeling reveal that for gradients greater than or equal to 1.30%Al/nm, the deep donor concentration is negligible and free hole concentrations roughly equal to the bound polarization charge density are achieved up to 1.6 × 1019 cm-3 at a gradient of 4.95%Al/nm. Accurate grading lengths in the p- and n-side of the pn-junction are extracted from scanning transmission electron microscopy images and are used to support energy band calculation and capacitance modeling. These results demonstrate the robust nature of p-type polarization doping in nanowires and put an upper bound on the magnitude of deep donor compensation.

Zigzag and Helical AlN Layer Prepared by Glancing Angle Deposition and Its Application as a Buffer Layer in a GaN-Based Light-Emitting Diode

Directory of Open Access Journals (Sweden)

Lung-Chien Chen

2012-01-01

Full Text Available This study investigates an aluminum nitride (AlN nanorod structure sputtered by glancing angle deposition (GLAD and its application as a buffer layer for GaN-based light-emitting diodes (LEDs that are fabricated on sapphire substrates. The ray tracing method is adopted with a three-dimensional model in TracePro software. Simulation results indicate that the zigzag AlN nanorod structure is an optimal buffer layer in a GaN-based LED. Furthermore, the light output power of a GaN-based LED with a zigzag AlN nanorod structure improves to as much as 28.6% at a forward current of 20 mA over that of the GaN-based LED with a normal AlN buffer layer.

Local thermal conductivity of polycrystalline AlN ceramics measured by scanning thermal microscopy and complementary scanning electron microscopy techniques

International Nuclear Information System (INIS)

Zhang Yue-Fei; Wang Li; Wei Bin; Ji Yuan; Han Xiao-Dong; Zhang Ze; Heiderhoff, R.; Geinzer, A. K.; Balk, L. J.

2012-01-01

The local thermal conductivity of polycrystalline aluminum nitride (AlN) ceramics is measured and imaged by using a scanning thermal microscope (SThM) and complementary scanning electron microscope (SEM) based techniques at room temperature. The quantitative thermal conductivity for the AlN sample is gained by using a SThM with a spatial resolution of sub-micrometer scale through using the 3ω method. A thermal conductivity of 308 W/m·K within grains corresponding to that of high-purity single crystal AlN is obtained. The slight differences in thermal conduction between the adjacent grains are found to result from crystallographic misorientations, as demonstrated in the electron backscattered diffraction. A much lower thermal conductivity at the grain boundary is due to impurities and defects enriched in these sites, as indicated by energy dispersive X-ray spectroscopy. (condensed matter: structural, mechanical, and thermal properties)

Aluminum surface modification by a non-mass-analyzed nitrogen ion beam

Science.gov (United States)

Ohira, Shigeo; Iwaki, Masaya

Non-mass-analyzed nitrogen ion implantation into polycrystal and single crystal aluminum sheets has been carried out at an accelerating voltage of 90 kV and a dose of 1 × 10 18 N ions/cm 2 using a Zymet implanter model Z-100. The pressure during implantation rose to 10 -3 Pa due to the influence of N gas feeding into the ion source. The characteristics of the surface layers were investigated by means of Auger electron spectroscopy (AES), X-ray diffraction (XRD), transmission electron diffraction (TED), and microscopy (TEM). The AES depth profiling shows a rectangular-like distribution of N atoms and little migration of O atoms near the surface. The high dose N-implantation forms c-axis oriented aluminum nitride (AIN) crystallines, and especially irradiation of Al single crystals with N ions leads to the formation of a hcp AlN single crystal. It is concluded that the high dose N-implantation in Al can result in the formation of AlN at room temperature without any thermal annealing. Furthermore, non-mass-analyzed N-implantation at a pressure of 10 -3 Pa of the nitrogen atmosphere causes the formation of pure AlN single crystals in the Al surface layer and consequently it can be practically used for AlN production.

Exact diagonalization of cubic lattice models in commensurate Abelian magnetic fluxes and translational invariant non-Abelian potentials

DEFF Research Database (Denmark)

Burrello, M.; Fulga, Ion Cosma; Lepori, L.

2017-01-01

of a translational invariant non-Abelian coupling for multi-component spinors does not affect the dimension of the minimal Hamiltonian blocks, nor the dimension of the magnetic Brillouin zone. General formulas are presented for the U(2) case and explicit examples are investigated involving π and 2π/3 magnetic fluxes......We present a general analytical formalism to determine the energy spectrum of a quantum particle in a cubic lattice subject to translationally invariant commensurate magnetic fluxes and in the presence of a general spaceindependent non-Abelian gauge potential. We first review and analyze the case...... of purely Abelian potentials, showing also that the so-called Hasegawa gauge yields a decomposition of the Hamiltonian into sub-matrices having minimal dimension. Explicit expressions for such matrices are derived, also for general anisotropic fluxes. Later on, we show that the introduction...

Cubic interaction in extended theories of massless higher-spin fields

Energy Technology Data Exchange (ETDEWEB)

Fradkin, E S; Vasiliev, M A

1987-08-17

A cubic interaction of all massless higher-spin fields with s greater than or equal to 1 is constructed, based on the extended higher-spin superalgebras suggested previously by one of us (M.V.). This interaction incorporates gravitational and Yang-Mills interactions of massless higher-spin fields, which turn out to be consistent in the cubic order. An essential novel feature of the gravitational higher-spin interaction is its non-analyticity in the cosmological constant. An explicit form is found for deformed higher-spin gauge transformations leaving the action invariant.

Non-minimally coupled quintessence dark energy model with a cubic galileon term: a dynamical system analysis

Science.gov (United States)

Bhattacharya, Somnath; Mukherjee, Pradip; Roy, Amit Singha; Saha, Anirban

2018-03-01

We consider a scalar field which is generally non-minimally coupled to gravity and has a characteristic cubic Galilean-like term and a generic self-interaction, as a candidate of a Dark Energy model. The system is dynamically analyzed and novel fixed points with perturbative stability are demonstrated. Evolution of the system is numerically studied near a novel fixed point which owes its existence to the Galileon character of the model. It turns out that demanding the stability of this novel fixed point puts a strong restriction on the allowed non-minimal coupling and the choice of the self-interaction. The evolution of the equation of state parameter is studied, which shows that our model predicts an accelerated universe throughout and the phantom limit is only approached closely but never crossed. Our result thus extends the findings of Coley, Dynamical systems and cosmology. Kluwer Academic Publishers, Boston (2013) for more general NMC than linear and quadratic couplings.

Cubic metaplectic forms and theta functions

CERN Document Server

Proskurin, Nikolai

1998-01-01

The book is an introduction to the theory of cubic metaplectic forms on the 3-dimensional hyperbolic space and the author's research on cubic metaplectic forms on special linear and symplectic groups of rank 2. The topics include: Kubota and Bass-Milnor-Serre homomorphisms, cubic metaplectic Eisenstein series, cubic theta functions, Whittaker functions. A special method is developed and applied to find Fourier coefficients of the Eisenstein series and cubic theta functions. The book is intended for readers, with beginning graduate-level background, interested in further research in the theory of metaplectic forms and in possible applications.

Quantitative characterization of non-classic polarization of cations on clay aggregate stability.

Directory of Open Access Journals (Sweden)

Feinan Hu

Full Text Available Soil particle interactions are strongly influenced by the concentration, valence and ion species and the pH of the bulk solution, which will also affect aggregate stability and particle transport. In this study, we investigated clay aggregate stability in the presence of different alkali ions (Li+, Na+, K+, and Cs+ at concentrations from10-5 to 10-1 mol L-1. Strong specific ion effects on clay aggregate stability were observed, and showed the order Cs+>K+>Na+>Li+. We found that it was not the effects of ion size, hydration, and dispersion forces in the cation-surface interactions but strong non-classic polarization of adsorbed cations that resulted in these specific effects. In this study, the non-classic dipole moments of each cation species resulting from the non-classic polarization were estimated. By comparing non-classic dipole moments with classic values, the observed dipole moments of adsorbed cations were up to 104 times larger than the classic values for the same cation. The observed non-classic dipole moments sharply increased with decreasing electrolyte concentration. We conclude that strong non-classic polarization could significantly suppress the thickness of the diffuse layer, thereby weakening the electric field near the clay surface and resulting in improved clay aggregate stability. Even though we only demonstrated specific ion effects on aggregate stability with several alkali ions, our results indicate that these effects could be universally important in soil aggregate stability.

Quantitative Characterization of Non-Classic Polarization of Cations on Clay Aggregate Stability

Science.gov (United States)

Hu, Feinan; Li, Hang; Liu, Xinmin; Li, Song; Ding, Wuquan; Xu, Chenyang; Li, Yue; Zhu, Longhui

2015-01-01

Soil particle interactions are strongly influenced by the concentration, valence and ion species and the pH of the bulk solution, which will also affect aggregate stability and particle transport. In this study, we investigated clay aggregate stability in the presence of different alkali ions (Li+, Na+, K+, and Cs+) at concentrations from10−5 to 10−1 mol L−1. Strong specific ion effects on clay aggregate stability were observed, and showed the order Cs+>K+>Na+>Li+. We found that it was not the effects of ion size, hydration, and dispersion forces in the cation–surface interactions but strong non-classic polarization of adsorbed cations that resulted in these specific effects. In this study, the non-classic dipole moments of each cation species resulting from the non-classic polarization were estimated. By comparing non-classic dipole moments with classic values, the observed dipole moments of adsorbed cations were up to 104 times larger than the classic values for the same cation. The observed non-classic dipole moments sharply increased with decreasing electrolyte concentration. We conclude that strong non-classic polarization could significantly suppress the thickness of the diffuse layer, thereby weakening the electric field near the clay surface and resulting in improved clay aggregate stability. Even though we only demonstrated specific ion effects on aggregate stability with several alkali ions, our results indicate that these effects could be universally important in soil aggregate stability. PMID:25874864

Polar and non-polar organic aerosols from large-scale agricultural-waste burning emissions in Northern India: Implications to organic mass-to-organic carbon ratio.

Science.gov (United States)

Rajput, Prashant; Sarin, M M

2014-05-01

This study focuses on characteristics of organic aerosols (polar and non-polar) and total organic mass-to-organic carbon ratio (OM/OC) from post-harvest agricultural-waste (paddy- and wheat-residue) burning emissions in Northern India. Aerosol samples from an upwind location (Patiala: 30.2°N, 76.3°E) in the Indo-Gangetic Plain were analyzed for non-polar and polar fractions of organic carbon (OC1 and OC2) and their respective mass (OM1 and OM2). On average, polar organic aerosols (OM2) contribute nearly 85% of the total organic mass (OM) from the paddy- and wheat-residue burning emissions. The water-soluble-OC (WSOC) to OC2 ratio, within the analytical uncertainty, is close to 1 from both paddy- and wheat-residue burning emissions. However, temporal variability and relatively low WSOC/OC2 ratio (Av: 0.67±0.06) is attributed to high moisture content and poor combustion efficiency during paddy-residue burning, indicating significant contribution (∼30%) of aromatic carbon to OC2. The OM/OC ratio for non-polar (OM1/OC1∼1.2) and polar organic aerosols (OM2/OC2∼2.2), hitherto unknown for open agricultural-waste burning emissions, is documented in this study. The total OM/OC ratio is nearly identical, 1.9±0.2 and 1.8±0.2, from paddy- and wheat-residue burning emissions. Copyright © 2013 Elsevier Ltd. All rights reserved.

Qualitative analysis on a cubic predator-prey system with diffusion

Directory of Open Access Journals (Sweden)

Qunyi Bie

2011-04-01

Full Text Available In this paper, we study a cubic predator-prey model with diffusion. We first establish the global stability of the trivial and nontrivial constant steady states for the reaction diffusion system, and then prove the existence and non-existence results concerning non-constant positive stationary solutions by using topological argument and the energy method, respectively.

Early stages of interface reactions between AlN and Ti thin films

CERN Document Server

Pinkas, M; Froumin, N; Pelleg, J; Dariel, M P

2002-01-01

The early stages of interface reactions between AlN and Ti thin films were investigated using x-ray diffractions, Auger electron spectroscopy, cross section transmission electron microscopy (XTEM), and high resolution XTEM. The AlN/Ti bilayers were deposited on a molybdenum substrate using reactive and nonreactive magnetron sputtering techniques. After deposition, the bilayers were heat treated for 1-10 h at 600 deg. C in a nitrogen atmosphere. Decomposition of the AlN layer took place at the AlN/Ti interface and its products, Al and N, reacted with Ti to produce a AlN/Al sub 3 Ti/Ti sub 2 N/Ti sub 3 Al/alpha-(Ti, Al)ss phase sequence. This phase sequence is not consistent with the Ti-Al-N phase diagram and is believed to be the outcome of the particular conditions that prevail in the thin film and correspond to a particular set of kinetic parameters. A model that explains the development of the phase sequence and predicts its evolution after prolonged heat treatments is put forward. The applicability of such...

Influence of metallic surface states on electron affinity of epitaxial AlN films

Energy Technology Data Exchange (ETDEWEB)

Mishra, Monu; Krishna, Shibin; Aggarwal, Neha [Advanced Materials and Devices Division, CSIR-National Physical Laboratory, Dr. K.S. Krishnan Marg, New Delhi110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Gupta, Govind, E-mail: govind@nplindia.org [Advanced Materials and Devices Division, CSIR-National Physical Laboratory, Dr. K.S. Krishnan Marg, New Delhi110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India)

2017-06-15

The present article investigates surface metallic states induced alteration in the electron affinity of epitaxial AlN films. AlN films grown by plasma-assisted molecular beam epitaxy system with (30% and 16%) and without metallic aluminium on the surface were probed via photoemission spectroscopic measurements. An in-depth analysis exploring the influence of metallic aluminium and native oxide on the electronic structure of the films is performed. It was observed that the metallic states pinned the Fermi Level (FL) near valence band edge and lead to the reduction of electron affinity (EA). These metallic states initiated charge transfer and induced changes in surface and interface dipoles strength. Therefore, the EA of the films varied between 0.6–1.0 eV due to the variation in contribution of metallic states and native oxide. However, the surface barrier height (SBH) increased (4.2–3.5 eV) adversely due to the availability of donor-like surface states in metallic aluminium rich films.

Cubic colloids : Synthesis, functionalization and applications

NARCIS (Netherlands)

Castillo, S.I.R.

2015-01-01

This thesis is a study on cubic colloids: micron-sized cubic particles with rounded corners (cubic superballs). Owing to their shape, particle packing for cubes is more efficient than for spheres and results in fascinating phase and packing behavior. For our cubes, the particle volume fraction when

Dense and high-stability Ti2AlN MAX phase coatings prepared by the combined cathodic arc/sputter technique

Science.gov (United States)

Wang, Zhenyu; Liu, Jingzhou; Wang, Li; Li, Xiaowei; Ke, Peiling; Wang, Aiying

2017-02-01

Ti2AlN belongs to a family of ternary nano-laminate alloys known as the MAX phases, which exhibit a unique combination of metallic and ceramic properties. In the present work, the dense and high-stability Ti2AlN coating has been successfully prepared through the combined cathodic arc/sputter deposition, followed by heat post-treatment. It was found that the as-deposited Ti-Al-N coating behaved a multilayer structure, where (Ti, N)-rich layer and Al-rich layer grew alternately, with a mixed phase constitution of TiN and TiAlx. After annealing at 800 °C under vacuum condition for 1.5 h, although the multilayer structure still was found, part of multilayer interfaces became indistinct and disappeared. In particular, the thickness of the Al-rich layer decreased in contrast to that of as-deposited coating due to the inner diffusion of the Al element. Moreover, the Ti2AlN MAX phase emerged as the major phase in the annealed coatings and its formation mechanism was also discussed in this study. The vacuum thermal analysis indicated that the formed Ti2AlN MAX phase exhibited a high-stability, which was mainly benefited from the large thickness and the dense structure. This advanced technique based on the combined cathodic arc/sputter method could be extended to deposit other MAX phase coatings with tailored high performance like good thermal stability, high corrosion and oxidation resistance etc. for the next protective coating materials.

Theoretical investigations of the bulk modulus in the tetra-cubic transition of PbTiO3 material

Directory of Open Access Journals (Sweden)

Renan A. P. Ribeiro

2014-01-01

Full Text Available Resulting from ion displacement in a solid under pressure, piezoelectricity is an electrical polarization that can be observed in perovskite-type electronic ceramics, such as PbTiO3, which present cubic and tetragonal symmetries at different pressures. The transition between these crystalline phases is determined theoretically through the bulk modulus from the relationship between material energy and volume. However, the change in the material molecular structure is responsible for the piezoelectric effect. In this study, density functional theory calculations using the Becke 3-Parameter-Lee-Yang-Parr hybrid functional were employed to investigate the structure and properties associated with the transition state of the tetragonal-cubic phase change in PbTiO3 material.

Second-harmonic generation in shear wave beams with different polarizations

Science.gov (United States)

Spratt, Kyle S.; Ilinskii, Yurii A.; Zabolotskaya, Evgenia A.; Hamilton, Mark F.

2015-10-01

A coupled pair of nonlinear parabolic equations was derived by Zabolotskaya [1] that model the transverse components of the particle motion in a collimated shear wave beam propagating in an isotropic elastic solid. Like the KZK equation, the parabolic equation for shear wave beams accounts consistently for the leading order effects of diffraction, viscosity and nonlinearity. The nonlinearity includes a cubic nonlinear term that is equivalent to that present in plane shear waves, as well as a quadratic nonlinear term that is unique to diffracting beams. The work by Wochner et al. [2] considered shear wave beams with translational polarizations (linear, circular and elliptical), wherein second-order nonlinear effects vanish and the leading order nonlinear effect is third-harmonic generation by the cubic nonlinearity. The purpose of the current work is to investigate the quadratic nonlinear term present in the parabolic equation for shear wave beams by considering second-harmonic generation in Gaussian beams as a second-order nonlinear effect using standard perturbation theory. In order for second-order nonlinear effects to be present, a broader class of source polarizations must be considered that includes not only the familiar translational polarizations, but also polarizations accounting for stretching, shearing and rotation of the source plane. It is found that the polarization of the second harmonic generated by the quadratic nonlinearity is not necessarily the same as the polarization of the source-frequency beam, and we are able to derive a general analytic solution for second-harmonic generation from a Gaussian source condition that gives explicitly the relationship between the polarization of the source-frequency beam and the polarization of the second harmonic.

Second-harmonic generation in shear wave beams with different polarizations

Energy Technology Data Exchange (ETDEWEB)

Spratt, Kyle S., E-mail: sprattkyle@gmail.com; Ilinskii, Yurii A.; Zabolotskaya, Evgenia A.; Hamilton, Mark F. [Applied Research Laboratories, The University of Texas at Austin, P. O. Box 8029, Austin, Texas 78713–8029, US (United States)

2015-10-28

A coupled pair of nonlinear parabolic equations was derived by Zabolotskaya [1] that model the transverse components of the particle motion in a collimated shear wave beam propagating in an isotropic elastic solid. Like the KZK equation, the parabolic equation for shear wave beams accounts consistently for the leading order effects of diffraction, viscosity and nonlinearity. The nonlinearity includes a cubic nonlinear term that is equivalent to that present in plane shear waves, as well as a quadratic nonlinear term that is unique to diffracting beams. The work by Wochner et al. [2] considered shear wave beams with translational polarizations (linear, circular and elliptical), wherein second-order nonlinear effects vanish and the leading order nonlinear effect is third-harmonic generation by the cubic nonlinearity. The purpose of the current work is to investigate the quadratic nonlinear term present in the parabolic equation for shear wave beams by considering second-harmonic generation in Gaussian beams as a second-order nonlinear effect using standard perturbation theory. In order for second-order nonlinear effects to be present, a broader class of source polarizations must be considered that includes not only the familiar translational polarizations, but also polarizations accounting for stretching, shearing and rotation of the source plane. It is found that the polarization of the second harmonic generated by the quadratic nonlinearity is not necessarily the same as the polarization of the source-frequency beam, and we are able to derive a general analytic solution for second-harmonic generation from a Gaussian source condition that gives explicitly the relationship between the polarization of the source-frequency beam and the polarization of the second harmonic.

Second-harmonic generation in shear wave beams with different polarizations

International Nuclear Information System (INIS)

Spratt, Kyle S.; Ilinskii, Yurii A.; Zabolotskaya, Evgenia A.; Hamilton, Mark F.

2015-01-01

A coupled pair of nonlinear parabolic equations was derived by Zabolotskaya [1] that model the transverse components of the particle motion in a collimated shear wave beam propagating in an isotropic elastic solid. Like the KZK equation, the parabolic equation for shear wave beams accounts consistently for the leading order effects of diffraction, viscosity and nonlinearity. The nonlinearity includes a cubic nonlinear term that is equivalent to that present in plane shear waves, as well as a quadratic nonlinear term that is unique to diffracting beams. The work by Wochner et al. [2] considered shear wave beams with translational polarizations (linear, circular and elliptical), wherein second-order nonlinear effects vanish and the leading order nonlinear effect is third-harmonic generation by the cubic nonlinearity. The purpose of the current work is to investigate the quadratic nonlinear term present in the parabolic equation for shear wave beams by considering second-harmonic generation in Gaussian beams as a second-order nonlinear effect using standard perturbation theory. In order for second-order nonlinear effects to be present, a broader class of source polarizations must be considered that includes not only the familiar translational polarizations, but also polarizations accounting for stretching, shearing and rotation of the source plane. It is found that the polarization of the second harmonic generated by the quadratic nonlinearity is not necessarily the same as the polarization of the source-frequency beam, and we are able to derive a general analytic solution for second-harmonic generation from a Gaussian source condition that gives explicitly the relationship between the polarization of the source-frequency beam and the polarization of the second harmonic

Development of polarization magneto-optics of paramagnetic crystals

International Nuclear Information System (INIS)

Zapasskij, V.S.; Feofilov, P.P.

1975-01-01

The present status of the polarization magnetooptics of crystals containing paramagnetic ion impurities is reviewed. The paper discusses methods of measurement of circular magnetic anisotropy and results obtained in recent years in the field of conventional magnetooptical studies, e.g., magnetooptical activity in absorption spectra for intrinsic and impurity defects in crystals, luminescence magnetic circular polarization, anisotropy of magnetooptical activity in cubic crystals. The main emphasis is placed on new trends in polarization magnetooptics: studies of interactions of a spin system with a lattice, in particular, spin-lattice relaxation and spin memory effect, experiments in the double radiooptical resonance, studies of optical spin relaxation, nonlinear magnetooptical effects, etc

Transfection efficiency and uptake process of polyplexes in human lung endothelial cells: a comparative study in non-polarized and polarized cells.

Science.gov (United States)

Mennesson, Eric; Erbacher, Patrick; Piller, Véronique; Kieda, Claudine; Midoux, Patrick; Pichon, Chantal

2005-06-01

Following systemic administration, polyplexes must cross the endothelium barrier to deliver genes to the target cells underneath. To design an efficient gene delivery system into lung epithelium, we evaluated capture and transfection efficiencies of DNA complexed with either Jet-PEI (PEI-polyplexes) or histidylated polylysine (His-polyplexes) in human lung microvascular endothelial cells (HLMEC) and tracheal epithelial cells. After optimizing growth conditions to obtain a tight HLMEC monolayer, we characterized uptake of polyplexes by flow cytometry and evaluated their transfection efficiency. Polyplexes were formulated as small particles. YOYO-labelled plasmid fluorescence intensity and luciferase activity were used as readouts for uptake and gene expression, respectively. PEI-polyplexes were more efficiently taken up than His-polyplexes by both non-polarized (2-fold) and polarized HLMEC (10-fold). They were mainly internalized by a clathrin-dependent pathway whatever the cell state. In non-polarized cells, His-polyplexes entered also mainly via a clathrin-dependent pathway but with an involvement of cholesterol. The cell polarization decreased this way and a clathrin-independent pathway became predominant. PEI-polyplexes transfected more efficiently HLMEC than His-polyplexes (10(7) vs. 10(5) relative light units (RLU)/mg of proteins) with a more pronounced difference in polarized cells. In contrast, no negative effect of the cell polarization was observed with tracheal epithelial cells in which both polyplexes had comparable efficiency. We show that the efficiency of polyplex uptake by HLMEC and their internalization mechanism are polymer-dependent. By contrast with His-polyplexes, the HLMEC polarization has little influence on the uptake process and on the transfection efficiency of PEI-polyplexes. Copyright (c) 2005 John Wiley & Sons, Ltd.

Indium hexagonal island as seed-layer to boost a-axis orientation of AlN thin films

Science.gov (United States)

Redjdal, N.; Salah, H.; Azzaz, M.; Menari, H.; Manseri, A.; Guedouar, B.; Garcia-Sanchez, A.; Chérif, S. M.

2018-06-01

Highly a-axis oriented aluminum nitride films have been grown on Indium coated (100) Si substrate by DC reactive magnetron sputtering. It is shown that In incorporated layer improve the extent of preferential growth along (100) axis and form dense AlN films with uniform surface and large grains, devoid of micro-cracks. As revealed by SEM cross section images, AlN structure consists of oriented columnar grains perpendicular to the Si surface, while AlN/In structure results in uniformely tilted column. SEM images also revealed the presence of In hexagonal islands persistent throughout the entire growth. Micro -Raman spectroscopy of the surface and the cross section of the AlN/In grown films evidenced their high degree of homogeneity and cristallinity.

Iterative Methods for the Non-LTE Transfer of Polarized Radiation: Resonance Line Polarization in One-dimensional Atmospheres

Science.gov (United States)

Trujillo Bueno, Javier; Manso Sainz, Rafael

1999-05-01

This paper shows how to generalize to non-LTE polarization transfer some operator splitting methods that were originally developed for solving unpolarized transfer problems. These are the Jacobi-based accelerated Λ-iteration (ALI) method of Olson, Auer, & Buchler and the iterative schemes based on Gauss-Seidel and successive overrelaxation (SOR) iteration of Trujillo Bueno and Fabiani Bendicho. The theoretical framework chosen for the formulation of polarization transfer problems is the quantum electrodynamics (QED) theory of Landi Degl'Innocenti, which specifies the excitation state of the atoms in terms of the irreducible tensor components of the atomic density matrix. This first paper establishes the grounds of our numerical approach to non-LTE polarization transfer by concentrating on the standard case of scattering line polarization in a gas of two-level atoms, including the Hanle effect due to a weak microturbulent and isotropic magnetic field. We begin demonstrating that the well-known Λ-iteration method leads to the self-consistent solution of this type of problem if one initializes using the ``exact'' solution corresponding to the unpolarized case. We show then how the above-mentioned splitting methods can be easily derived from this simple Λ-iteration scheme. We show that our SOR method is 10 times faster than the Jacobi-based ALI method, while our implementation of the Gauss-Seidel method is 4 times faster. These iterative schemes lead to the self-consistent solution independently of the chosen initialization. The convergence rate of these iterative methods is very high; they do not require either the construction or the inversion of any matrix, and the computing time per iteration is similar to that of the Λ-iteration method.

Ab initio study of cubic complex Bi2CrCuO6 perovskite

International Nuclear Information System (INIS)

Fajardo, F.; Cardona, R.; Landinez Tellez, D.A.; Arbey Rodriguez M, J.; Roa-Rojas, J.

2008-01-01

We report a detailed calculation of the structural and electronic properties for the cubic complex Bi 2 CrCuO 6 perovskite material by density functional theory. The exchange-correlation potential was included through the generalized gradient approximation. From the adjusting of Murnaghan state equation to the energy as a function of volume data, we obtain an ideal lattice parameter of 7.763 A. The density of states study was carried out considering the two spin polarizations. Results reveal that this material behaves as a conductor to the spin-down polarization and evidence a semiconductor tendency to the spin-up configuration. This tendency to the half-metallicity character is corroborated by the integer number of magnetic moment (3.0 μ B ), which is attributed to the Cr-spin-up orbital contribution

Optical Properties Dependence with Gas Pressure in AlN Films Deposited by Pulsed Laser Ablation

International Nuclear Information System (INIS)

Perez, J A; Riascos, H; Caicedo, J C; Cabrera, G; Yate, L

2011-01-01

AlN films were deposited by pulsed laser deposition technique (PLD) using an Nd: YAG laser (λ = 1064 nm). The films were deposited in a nitrogen atmosphere as working gas; the target was an aluminum high purity (99.99%). The films were deposited with a laser fluence of 7 J/cm2 for 10 minutes on silicon (100) substrates. The substrate temperature was 300 deg. C and the working pressure was varied from 3 mtorr to 11 mtorr. The thickness measured by profilometer was 150 nm for all films. The crystallinity was observed via XRD pattern, the morphology and composition of the films were studied using scanning electron microscopy (SEM) and Energy Dispersive X-ray analysis (EDX), respectively. The optical reflectance spectra and color coordinates of the films were obtained by optical spectral reflectometry technique in the range of 400 cm-1- 900 cm-1 by an Ocean Optics 2000 spectrophotometer. In this work, a clear dependence of the reflectance, dominant wavelength and color purity was found in terms of the applied pressure to the AlN films. A reduction in reflectance of about 55% when the pressure was increased from 3 mtorr to 11 mtorr was observed. This paper deals with the formation of AlN thin films as promising materials for the integration of SAW devices on Si substrates due to their good piezoelectric properties and the possibility of deposition at low temperature compatible with the manufacturing of Si integrated circuits.

Optical Properties Dependence with Gas Pressure in AlN Films Deposited by Pulsed Laser Ablation

Energy Technology Data Exchange (ETDEWEB)

Perez, J A; Riascos, H [Departamento de Fisica, Universidad Tecnologica de Pereira, Grupo plasma Laser y Aplicaciones A.A 097 (Colombia); Caicedo, J C [Grupo pelIculas delgadas, Universidad del Valle, Cali (Colombia); Cabrera, G; Yate, L, E-mail: jcaicedoangulo@gmail.com [Department de Fisica Aplicada i Optica, Universitat de Barcelona, Catalunya (Spain)

2011-01-01

AlN films were deposited by pulsed laser deposition technique (PLD) using an Nd: YAG laser ({lambda} = 1064 nm). The films were deposited in a nitrogen atmosphere as working gas; the target was an aluminum high purity (99.99%). The films were deposited with a laser fluence of 7 J/cm2 for 10 minutes on silicon (100) substrates. The substrate temperature was 300 deg. C and the working pressure was varied from 3 mtorr to 11 mtorr. The thickness measured by profilometer was 150 nm for all films. The crystallinity was observed via XRD pattern, the morphology and composition of the films were studied using scanning electron microscopy (SEM) and Energy Dispersive X-ray analysis (EDX), respectively. The optical reflectance spectra and color coordinates of the films were obtained by optical spectral reflectometry technique in the range of 400 cm-1- 900 cm-1 by an Ocean Optics 2000 spectrophotometer. In this work, a clear dependence of the reflectance, dominant wavelength and color purity was found in terms of the applied pressure to the AlN films. A reduction in reflectance of about 55% when the pressure was increased from 3 mtorr to 11 mtorr was observed. This paper deals with the formation of AlN thin films as promising materials for the integration of SAW devices on Si substrates due to their good piezoelectric properties and the possibility of deposition at low temperature compatible with the manufacturing of Si integrated circuits.

Plane of polarization rotation induced by a non-Minkowskian spacetime

International Nuclear Information System (INIS)

Evangelidis, E.A.

1979-01-01

Fermat's principle has been used to derive expressions for the curvature and torsion of the path of the electromagnetic radiation in a medium of refractive index n (= function of space coordinates). Levi-Civita's notion of parallelism further, in conjunction with Brill's results have enabled the derivation (1) of Einstein's formula for the deflection of light, and (2) an expression for the rotation of the plane of polarization, an entirely general relativistic effect, unaccountable in Newtonian physics. Finally, the idea is put forward that the observed rotation of polarization in pulsars might be a purely general relativistic effect due to the non-Minkowskian geometry around them. (Auth.)

Tip-induced domain growth on the non-polar cuts of lithium niobate single-crystals

Science.gov (United States)

Alikin, D. O.; Ievlev, A. V.; Turygin, A. P.; Lobov, A. I.; Kalinin, S. V.; Shur, V. Ya.

2015-05-01

Currently, ferroelectric materials with designed domain structures are considered as a perspective material for new generation of photonic, data storage, and data processing devices. Application of external electric field is the most convenient way of the domain structure formation. Lots of papers are devoted to the investigation of domain kinetics on polar surface of crystals while the forward growth remains one of the most mysterious stages due to lack of experimental methods allowing to study it. Here, we performed tip-induced polarization reversal on X- and Y-non-polar cuts in single-crystal of congruent lithium niobate which allows us to study the forward growth with high spatial resolution. The revealed difference in the shape and length of domains induced on X- and Y-cuts is beyond previously developed theoretical approaches used for the theoretical consideration of the domains growth at non-polar ferroelectric surfaces. To explain experimental results, we used kinetic approach with anisotropy of screening efficiency along different crystallographic directions.

Polarization-independent rapidly tunable optical add-drop multiplexer utilizing non-polarizing beam splitters in Ti:LiNbO3

Science.gov (United States)

Shin, Yong-Wook; Sung, Won Ju; Eknoyan, O.; Madsen, C. K.; Taylor, H. F.

2012-04-01

A polarization-independent four-port wavelength-tunable optical add drop multiplexer (OADM) that utilizes non-polarizing relaxed beam splitters has been analyzed and demonstrated in Ti:LiNbO3 at the 1530 nm wavelength regime. The design utilizes an asymmetric interferometer configuration with strain induced index grating for polarization coupling along its arms that are shifted in position relative to each other. Experimental results of the filter response agree with theoretical predictions. Electrooptic tuning over a range of 15.7 nm at a rate of 0.08 nm/V has been measured. A temporal response < 46 ns to a 20 V step change in tuning voltage has been demonstrated. Fiber-to-fiber insertion loss is ~ 6.5 dB.

Conversion of proteins from a non-polarized to an apical secretory pattern in MDCK cells

International Nuclear Information System (INIS)

Vogel, Lotte K.; Larsen, Jakob E.; Hansen, Martin; Truffer, Renato

2005-01-01

Previously it was shown that fusion proteins containing the amino terminus of an apical targeted member of the serpin family fused to the corresponding carboxyl terminus of the non-polarized secreted serpin, antithrombin, are secreted mainly to the apical side of MDCK cells. The present study shows that this is neither due to the transfer of an apical sorting signal from the apically expressed proteins, since a sequence of random amino acids acts the same, nor is it due to the deletion of a conserved signal for correct targeting from the non-polarized secreted protein. Our results suggest that the polarity of secretion is determined by conformational sensitive sorting signals

Plasmon mediated non-photochemical nucleation of nanoparticles by circularly polarized light

OpenAIRE

Karpov, Victor G.; Grigorchuk, Nicholas I.

2014-01-01

We predict nucleation of pancake shaped metallic nanoparticles having plasmonic frequencies in resonance with a non-absorbed circularly polarized electromagnetic field. We show that the same field can induce nucleation of randomly oriented needle shaped particles. The probabilities of these shapes are estimated vs. field frequency and strength, material parameters, and temperature. This constitutes a quantitative model of non-photochemical laser induced nucleation (NPLIN) consistent with the ...

DLC and AlN thin films influence the thermal conduction of HPLED light

Science.gov (United States)

Hsu, Ming Seng; Hsu, Ching Yao; Huang, Jen Wei; Shyu, Feng Lin

2015-08-01

Thermal dissipation had an important influence in the effect and life of light emitting diodes (LED) because it enables transfer the heat away from electric device to the aluminum plate that can be used for heat removal. In the industrial processing, the quality of the thermal dissipation decides by the gumming technique between the PCB and aluminum plate. In this study, we fabricated double layer ceramic thin films of diamond like carbon (DLC) and alumina nitride (AlN) by vacuum sputtering soldered the substrate of high power light emitting diodes (HPLED) light to check the heat conduction. The ceramic dielectric coatings were characterized by several subsequent analyses, especially the measurement of real work temperature. The X-Ray photoelectron spectroscopy (XPS) patterns reveal those ceramic phases were successfully grown onto the substrate. The work temperatures show DLC and AlN films coating had limited the heat transfer by the lower thermal conductivity of these ceramic films. Obviously, it hadn't transferred heat and limited work temperature of HPLED better than DLC thin film only.

Efficient Reservoir Simulation with Cubic Plus Association and Cross-Association Equation of State for Multicomponent Three-Phase Compressible Flow with Applications in CO2 Storage and Methane Leakage

Science.gov (United States)

Moortgat, J.

2017-12-01

We present novel simulation tools to model multiphase multicomponent flow and transport in porous media for mixtures that contain non-polar hydrocarbons, self-associating polar water, and cross-associating molecules like methane, ethane, unsaturated hydrocarbons, CO2 and H2S. Such mixtures often occur when CO2 is injected and stored in saline aquifers, or when methane is leaking into groundwater. To accurately predict the species transfer between aqueous, gaseous and oleic phases, and the subsequent change in phase properties, the self- and cross-associating behavior of molecules needs to be taken into account, particularly at the typical temperatures and pressures in deep formations. The Cubic-Plus-Association equation-of-state (EOS) has been demonstrated to be highly accurate for such problems but its excessive computational cost has prevented widespread use in reservoir simulators. We discuss the thermodynamical framework and develop sophisticated numerical algorithms that allow reservoir simulations with efficiencies comparable to a simple cubic EOS. This approach improves our predictive powers for highly nonlinear fluid behavior related to geological carbon sequestration, such as density driven flow and natural convection (solubility trapping), evaporation of water into the CO2-rich gas phase, and competitive dissolution-evaporation when CO2 is injected in, e.g., methane saturated aquifers. Several examples demonstrate the accuracy and robustness of this EOS framework for complex applications.

Local lattice environment of indium in GaN, AlN, and InN; Lokale Gitterumgebung von Indium in GaN, AlN und InN

Energy Technology Data Exchange (ETDEWEB)

Penner, J

2007-12-20

After an introduction to the physical properties of the nitrides, their preparation, and the state of studies on the implantation in the nitrides the experimental method (PAC) applied in this thesis and the data analysis are presented. The next chapter describes then the applied materials and the sample preparation. The following chapters contain the PAC measurements on the annealing behaviout of GaN, AlN, and InN after the implantation as well as dose- and temperature dependent PAC studies. Finally the most important results are summarized.

Comparison of Chlamydia trachomatis serovar L2 growth in polarized genital epithelial cells grown in three-dimensional culture with non-polarized cells.

Science.gov (United States)

Dessus-Babus, Sophie; Moore, Cheryl G; Whittimore, Judy D; Wyrick, Priscilla B

2008-04-01

A common model for studying Chlamydia trachomatis and growing chlamydial stocks uses Lymphogranuloma venereum serovar L2 and non-polarized HeLa cells. However, recent publications indicate that the growth rate and progeny yields can vary considerably for a particular strain depending on the cell line/type used, and seem to be partially related to cell tropism. In the present study, the growth of invasive serovar L2 was compared in endometrial HEC-1B and endocervical HeLa cells polarized on collagen-coated microcarrier beads, as well as in HeLa cells grown in tissue culture flasks. Microscopy analysis revealed no difference in chlamydial attachment/entry patterns or in inclusion development throughout the developmental cycle between cell lines. Very comparable growth curves in both cell lines were also found using real-time PCR analysis, with increases in chlamydial DNA content of 400-500-fold between 2 and 36 h post-inoculation. Similar progeny yields with comparable infectivity were recovered from HEC-1B and HeLa cell bead cultures, and no difference in chlamydial growth was found in polarized vs. non-polarized HeLa cells. In conclusion, unlike other C. trachomatis strains such as urogenital serovar E, invasive serovar L2 grows equally well in physiologically different endometrial and endocervical environments, regardless of the host cell polarization state.

Investigation of AlN films grown by molecular beam epitaxy on vicinal Si(111) as templates for GaN quantum dots

International Nuclear Information System (INIS)

Benaissa, M.; Vennegues, P.; Tottereau, O.; Nguyen, L.; Semond, F.

2006-01-01

The use of AlN epitaxial films deposited on vicinal Si(111) as templates for the growth of GaN quantum dots is investigated by transmission electron microscopy and atomic force microscopy. It is found that the substrate vicinality induces both a slight tilt of the AlN (0001) direction with respect to the [111] direction and a step bunching mechanism. As a consequence, a dislocation dragging behavior is observed giving rise to dislocation-free areas well suited for the nucleation of GaN quantum dots

The Effect of Cooling Conditions on the Evolution of Non-metallic Inclusions in High Manganese TWIP Steels

Science.gov (United States)

Wang, Yu-Nan; Yang, Jian; Xin, Xiu-Ling; Wang, Rui-Zhi; Xu, Long-Yun

2016-04-01

In the present study, the effect of cooling conditions on the evolution of non-metallic inclusions in high manganese TWIP steels was investigated based on experiments and thermodynamic calculations. In addition, the formation and growth behavior of AlN inclusions during solidification under different cooling conditions were analyzed with the help of thermodynamics and dynamics. The inclusions formed in the high manganese TWIP steels are classified into nine types: (1) AlN; (2) MgO; (3) CaS; (4) MgAl2O4; (5) AlN + MgO; (6) MgO + MgS; (7) MgO + MgS + CaS; (8) MgO + CaS; (9) MgAl2O4 + MgS. With the increase in the cooling rate, the volume fraction and area ratio of inclusions are almost constant; the size of inclusions decreases and the number density of inclusions increases in the steels. The thermodynamic results of inclusion types calculated with FactSage are consistent with the observed results. With increasing cooling rate, the diameter of AlN decreases. When the cooling rate increases from 0.75 to 4.83 K s-1, the measured average diameter of AlN decreases from 4.49 to 2.42 μm. Under the high cooling rate of 4.83 K s-1, the calculated diameter of AlN reaches 3.59 μm at the end of solidification. However, the calculated diameter of AlN increases to approximately 5.93 μm at the end of solidification under the low cooling rate of 0.75 K s-1. The calculated diameter of AlN decreases with increasing cooling rate. The theoretical calculation results of the change in diameter of AlN under the different cooling rates have the same trend with the observed results. The existences of inclusions in the steels, especially AlN which average sizes are 2.42 and 4.49 μm, respectively, are not considered to have obvious influences on the hot ductility.

Etching of semiconductor cubic crystals: Determination of the dissolution slowness surfaces

Science.gov (United States)

Tellier, C. R.

1990-03-01

Equations of the representative surface of dissolution slowness for cubic crystals are determined in the framework of a tensorial approach of the orientation-dependent etching process. The independent dissolution constants are deduced from symmetry considerations. Using previous data on the chemical etching of germanium and gallium arsenide crystals, some possible polar diagrams of the dissolution slowness are proposed. A numerical and graphical simulation method is used to obtain the derived dissolution shapes. The influence of extrema in the dissolution slowness on the successive dissolution shapes is also examined. A graphical construction of limiting shapes of etched crystals appears possible using the tensorial representation of the dissolution slowness.

The impact of electrode materials on 1/f noise in piezoelectric AlN contour mode resonators

Science.gov (United States)

Kim, Hoe Joon; Jung, Soon In; Segovia-Fernandez, Jeronimo; Piazza, Gianluca

2018-05-01

This paper presents a detailed analysis on the impact of electrode materials and dimensions on flicker frequency (1/f) noise in piezoelectric aluminum nitride (AlN) contour mode resonators (CMRs). Flicker frequency noise is a fundamental noise mechanism present in any vibrating mechanical structure, whose sources are not generally well understood. 1 GHz AlN CMRs with three different top electrode materials (Al, Au, and Pt) along with various electrode lengths and widths are fabricated to control the overall damping acting on the device. Specifically, the use of different electrode materials allows control of thermoelastic damping (TED), which is the dominant damping mechanism for high frequency AlN CMRs and largely depends on the thermal properties (i.e. thermal diffusivities and expansion coefficients) of the metal electrode rather than the piezoelectric film. We have measured Q and 1/f noise of 68 resonators and the results show that 1/f noise decreases with increasing Q, with a power law dependence that is about 1/Q4. Interestingly, the noise level also depends on the type of electrode materials. Devices with Pt top electrode demonstrate the best noise performance. Our results help unveiling some of the sources of 1/f noise in these resonators, and indicate that a careful selection of the electrode material and dimensions could reduce 1/f noise not only in AlN-CMRs, but also in various classes of resonators, and thus enable ultra-low noise mechanical resonators for sensing and radio frequency applications.

Roles of kinetics and energetics in the growth of AlN by plasma-assisted molecular beam epitaxy

International Nuclear Information System (INIS)

Im, I. H.; Minegishi, T.; Hanada, T.; Lee, S. W.; Cho, M. W.; Yao, T.; Oh, D. C.; Chang, J. H.

2006-01-01

The roles of kinetics and energetics in the growth processes of AlN on c-sapphire by plasma assisted molecular beam epitaxy are investigated by varying the growth rate from 1 to 31 A/min and the substrate temperature from 800 to 1000 .deg. C. The energetics is found to govern the growth of AlN in the low-growth rate region even at a low substrate temperature of 800 .deg. C owing to the enhanced residence time of adatoms, thereby increasing the surface migration length. As the growth rate increases, the growth tends to be governed by kinetics because of a reduction in the residence time of adatoms. Consequently, the surface roughness and crystal quality are greatly improved for the low-growth-rate case. In addition, the lattice strain relaxation is completed from the beginning of epitaxy for energetics-limiting growth while lattice strain relaxation is retarded for kinetics-limiting growth because of pre-existing partial strain relaxation. Energetics becomes more favorable as the substrate temperature is raised because of an increase in the surface diffusion length owing to an enhanced diffusion coefficient. Consequently high-crystal-quality AlN layers are grown under the energetics-limiting growth condition with a screw dislocation density of 7.4 x 10 8 cm -2 even for a thin 42-nm thick film.

CubiCal - Fast radio interferometric calibration suite exploiting complex optimisation

Science.gov (United States)

Kenyon, J. S.; Smirnov, O. M.; Grobler, T. L.; Perkins, S. J.

2018-05-01

It has recently been shown that radio interferometric gain calibration can be expressed succinctly in the language of complex optimisation. In addition to providing an elegant framework for further development, it exposes properties of the calibration problem which can be exploited to accelerate traditional non-linear least squares solvers such as Gauss-Newton and Levenberg-Marquardt. We extend existing derivations to chains of Jones terms: products of several gains which model different aberrant effects. In doing so, we find that the useful properties found in the single term case still hold. We also develop several specialised solvers which deal with complex gains parameterised by real values. The newly developed solvers have been implemented in a Python package called CubiCal, which uses a combination of Cython, multiprocessing and shared memory to leverage the power of modern hardware. We apply CubiCal to both simulated and real data, and perform both direction-independent and direction-dependent self-calibration. Finally, we present the results of some rudimentary profiling to show that CubiCal is competitive with respect to existing calibration tools such as MeqTrees.

Broadband Polarization-Insensitive Wavelength Conversion Based on Non-Degenerate Four-Wave Mixing in a Silicon Nanowire

DEFF Research Database (Denmark)

Pu, Minhao; Hu, Hao; Ji, Hua

2012-01-01

We experimentally demonstrate broadband polarization-insensitive one-to-two wavelength conversion of a 10-Gb/s DPSK data signal based on non-degenerate four-wave mixing in a silicon nanowire with bit-error rate measurements.......We experimentally demonstrate broadband polarization-insensitive one-to-two wavelength conversion of a 10-Gb/s DPSK data signal based on non-degenerate four-wave mixing in a silicon nanowire with bit-error rate measurements....

Local Polar Fluctuations in Lead Halide Perovskite Crystals

Science.gov (United States)

Yaffe, Omer; Guo, Yinsheng; Tan, Liang Z.; Egger, David A.; Hull, Trevor; Stoumpos, Constantinos C.; Zheng, Fan; Heinz, Tony F.; Kronik, Leeor; Kanatzidis, Mercouri G.; Owen, Jonathan S.; Rappe, Andrew M.; Pimenta, Marcos A.; Brus, Louis E.

2017-03-01

Hybrid lead-halide perovskites have emerged as an excellent class of photovoltaic materials. Recent reports suggest that the organic molecular cation is responsible for local polar fluctuations that inhibit carrier recombination. We combine low-frequency Raman scattering with first-principles molecular dynamics (MD) to study the fundamental nature of these local polar fluctuations. Our observations of a strong central peak in the cubic phase of both hybrid (CH3 NH3 PbBr3 ) and all-inorganic (CsPbBr3 ) lead-halide perovskites show that anharmonic, local polar fluctuations are intrinsic to the general lead-halide perovskite structure, and not unique to the dipolar organic cation. MD simulations indicate that head-to-head Cs motion coupled to Br face expansion, occurring on a few hundred femtosecond time scale, drives the local polar fluctuations in CsPbBr3 .

Local Polar Fluctuations in Lead Halide Perovskite Crystals

Energy Technology Data Exchange (ETDEWEB)

Yaffe, Omer; Guo, Yinsheng; Tan, Liang Z.; Egger, David A.; Hull, Trevor; Stoumpos, Constantinos C.; Zheng, Fan; Heinz, Tony F.; Kronik, Leeor; Kanatzidis, Mercouri G.; Owen, Jonathan S.; Rappe, Andrew M.; Pimenta, Marcos A.; Brus, Louis E.

2017-03-01

Hybrid lead-halide perovskites have emerged as an excellent class of photovoltaic materials. Recent reports suggest that the organic molecular cation is responsible for local polar fluctuations that inhibit carrier recombination. We combine low-frequency Raman scattering with first-principles molecular dynamics (MD) to study the fundamental nature of these local polar fluctuations. Our observations of a strong central peak in the cubic phase of both hybrid (CH3NH3PbBr3) and all-inorganic (CsPbBr3) leadhalide perovskites show that anharmonic, local polar fluctuations are intrinsic to the general lead-halide perovskite structure, and not unique to the dipolar organic cation. MD simulations indicate that head-tohead Cs motion coupled to Br face expansion, occurring on a few hundred femtosecond time scale, drives the local polar fluctuations in CsPbBr3.

Catalytic effect of Al and AlN interlayer on the growth and properties of containing carbon films

International Nuclear Information System (INIS)

Zhou, Bing; Liu, Zhubo; Tang, Bin; Rogachev, A.V.

2015-01-01

Highlights: • DLC and CN x bilayers with Al (AlN) interlayer were fabricated by cathode arc technique. • Complete diffusion of Al and C atoms occurs at the interface of Al/DLC (CN x ) bilayer. • Al/CN x bilayer presents a higher content of Csp 3 /Csp 2 bonds. • The hardness of Al/DLC bilayer decreases but increases for the other bilayers. • Morphology of the bilayers was explained by growth mechanism of DLC and surface state of substrate. - Abstract: Diamond-like carbon (DLC) and carbon nitride (CN x ) bilayer films with Al and AlN interlayer were fabricated by pulse cathode arc technique. The structure, composition, morphology and mechanical properties of the films were investigated by Raman, Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), Knoop sclerometer and surface profilometer. The results indicated that the complete diffusion between C and Al atoms occurs in the Al/DLC and Al/CN x bilayer. Al interlayer induces the increase of the size and ordering of Csp 2 clusters in the films but AlN interlayer increases the disordering degree of Csp 2 clusters. XPS results showed that a higher content of Csp 3 /Csp 2 bonds presents in the Al/CN x bilayer, and Al and AlN interlayer decreases the atomic ratio of N/C. AFM with phase contrast mode illustrated the morphologic characteristics of the bilayer films. All the bilayers show a nano-structural surface. The morphology changes of the bilayer were well explained by the surface state of the substrate and the growth mechanism of DLC films. The hardness of Al/DLC bilayer decreases but it increases for the other bilayers compared to the corresponding DLC (CN x ) monolayer. The internal stress of the bilayer is significantly lower than that of the monolayer except for the AlN/CN x bilayer. These studies could make the difference at the time of choosing a suitable functional film for certain application

Effect of AlN doping on the growth morphology of SiC

Energy Technology Data Exchange (ETDEWEB)

Singh, N.B.; Jones, E.; Berghmans, A.; Wagner, B.P.; Jelen, E.; McLaughlin, S.; Knuteson, D.J.; Fitelson, M.; King, M.; Kahler, D. [Northrop Grumman Corporation, ES-ATL, Linthicum, MD (United States)

2009-09-15

AlN doped SiC films were deposited on on-axis Si-face 4H-SiC(0001) substrates by the physical vapor transport (PVT) method. Thick film in the range of 20 {mu}m range was grown and morphology was characterized. Films were grown by physical vapor deposition (PVD) in a vertical geometry in the nitrogen atmosphere. We observed that nucleation occurred in the form of discs and growth occurred in hexagonal geometry. The X-ray studies showed (001)orientation and full width of half maxima (FWHM) was less than 0.1 indicating good crystallinity. We also observed that film deposited on the carbon crucible had long needles with anisotropic growth very similar to that of pure AlN. Some of the needles grew up to sizes of 200{mu}m in length and 40 to 50 {mu}m in width. It is clear that annealing of SiC-AlN powder or high temperature physical vapor deposition produces similar crystal structure for producing AlN-SiC solid solution. SEM studies indicated that facetted hexagons grew on the top of each other and coarsened and merged to form cm size grains on the substrate. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Novel Action of Carotenoids on Non-Alcoholic Fatty Liver Disease: Macrophage Polarization and Liver Homeostasis.

Science.gov (United States)

Ni, Yinhua; Zhuge, Fen; Nagashimada, Mayumi; Ota, Tsuguhito

2016-06-24

Non-alcoholic fatty liver disease (NAFLD) is the most common chronic liver disease. It is characterized by a wide spectrum of hepatic changes, which may progress to non-alcoholic steatohepatitis (NASH) and cirrhosis. NAFLD is considered a hepatic manifestation of metabolic syndrome; however, mechanisms underlying the onset and progression of NAFLD are still unclear. Resident and recruited macrophages are key players in the homeostatic function of the liver and in the progression of NAFLD to NASH. Progress has been made in understanding the molecular mechanisms underlying the polarized activation of macrophages. New NAFLD therapies will likely involve modification of macrophage polarization by restraining M1 activation or driving M2 activation. Carotenoids are potent antioxidants and anti-inflammatory micronutrients that have been used to prevent and treat NAFLD. In addition to their antioxidative action, carotenoids can regulate macrophage polarization and thereby halt the progression of NASH. In this review, we summarize the molecular mechanisms of macrophage polarization and the function of liver macrophages/Kupffer cells in NAFLD. From our review, we propose that dietary carotenoids, such as β-cryptoxanthin and astaxanthin, be used to prevent or treat NAFLD through the regulation of macrophage polarization and liver homeostasis.

Epitaxial AlN layers on sapphire and diamond; Epitaktische AlN-Schichten auf Saphir und Diamant

Energy Technology Data Exchange (ETDEWEB)

Hermann, Martin

2009-04-27

In this work, epitaxial AlN layers deposited by molecular beam epitaxy on sapphire and diamond substrates were investigated. Starting from this AlN, the dopant silicon was added. The influence of the silicon doping on the structural properties of the host AlN crystal was investigated using high resolution X-ray diffraction. Once the silicon concentration exceeds 1 x 10{sup 19} cm{sup -3}, a significant change of the AlN:Si crystal can be observed: increasing the silicon concentration up to 5 x 10{sup 20} cm{sup -3} results in a decrease of the a lattice parameter by approximately 1.2 pm and an increase of the c lattice parameter by about 1.0 pm. The crystal is stressed additionally by adding silicon resulting in a increase of the biaxial compressive stress of up to 2.0 GPa. Further increase of the silicon concentration leads to lattice relaxation. This result from X-ray diffraction was independently confirmed by Raman spectroscopy investigations. Further increase of the silicon concentration leads to the generation of polycrystalline phases within the epitaxial layer. XTEM measurements detected these polycrystalline phases. In addition, XTEM investigations confirmed also the increase of the lateral crystal size with increasing silicon concentration, as well as a great reduction of the screw dislocation density by more than one order of magnitude as found by X-ray diffraction: in undoped, nitrogen rich grown AlN layers the screw dislocation density is about 3 x 10{sup 8} cm{sup -2}, while AlN layers with a silicon concentration of 5 x 10{sup 20} cm{sup -3} show a screw dislocation density of only 1 x 10{sup 7} cm{sup -2}. In low-doped AlN:Si ([Si]{approx}2 x 10{sup 19} cm{sup -3}) the activation energy of the electronic conductivity is about 250 meV. Increasing the silicon concentration to about 1 x 10{sup 21} cm{sup -3} leads to an increase of the activation energy up to more than 500 meV in the now much more stressed AlN:Si epilayer. Studies of the absorption

Interpolation of natural cubic spline

Directory of Open Access Journals (Sweden)

Arun Kumar

1992-01-01

Full Text Available From the result in [1] it follows that there is a unique quadratic spline which bounds the same area as that of the function. The matching of the area for the cubic spline does not follow from the corresponding result proved in [2]. We obtain cubic splines which preserve the area of the function.

Microstructural analysis in the depth direction of a heteroepitaxial AlN thick film grown on a trench-patterned template by nanobeam X-ray diffraction

Science.gov (United States)

Shida, K.; Takeuchi, S.; Tohei, T.; Miyake, H.; Hiramatsu, K.; Sumitani, K.; Imai, Y.; Kimura, S.; Sakai, A.

2018-04-01

This work quantitatively assessed the three-dimensional distribution of crystal lattice distortions in an epitaxial AlN thick film grown on a trench-patterned template, using nanobeam X-ray diffraction. Position-dependent ω-2θ-φ mapping clearly demonstrated local tilting, spacing and twisting of lattice planes as well as fluctuations in these phenomena on a sub-micrometer scale comparable to the pitch of the trench-and-terrace patterning. Analysis of the crystal lattice distortion in the depth direction was performed using a newly developed method in which the X-ray nanobeam diffracted from the sample surface to specific depths can be selectively detected by employing a Pt wire profiler. This technique generated depth-resolved ω-2θ-φ maps confirming that fluctuations in lattice plane tilting and spacing greatly depend on the dislocation distribution and the history of the AlN epitaxial growth on the trench-patterned structure. It was also found that both fluctuations were reduced on approaching the AlN surface and, in particular, were sharply reduced at specific depths in the terrace regions. These sharp reductions are attributed to the formation of sacrificial zones with degraded crystal quality around the trenches and possibly lead to raising the crystal quality near the surface of the AlN film.

Artificial boundary conditions for certain evolution PDEs with cubic nonlinearity for non-compactly supported initial data

Science.gov (United States)

Vaibhav, V.

2011-04-01

The paper addresses the problem of constructing non-reflecting boundary conditions for two types of one dimensional evolution equations, namely, the cubic nonlinear Schrödinger (NLS) equation, ∂tu+Lu-iχ|u|2u=0 with L≡-i∂x2, and the equation obtained by letting L≡∂x3. The usual restriction of compact support of the initial data is relaxed by allowing it to have a constant amplitude along with a linear phase variation outside a compact domain. We adapt the pseudo-differential approach developed by Antoine et al. (2006) [5] for the NLS equation to the second type of evolution equation, and further, extend the scheme to the aforementioned class of initial data for both of the equations. In addition, we discuss efficient numerical implementation of our scheme and produce the results of several numerical experiments demonstrating its effectiveness.

Effect of the nand p-type Si(100) substrates with a SiC buffer layer on the growth mechanism and structure of epitaxial layers of semipolar AlN and GaN

Science.gov (United States)

Bessolov, V. N.; Grashchenko, A. S.; Konenkova, E. V.; Myasoedov, A. V.; Osipov, A. V.; Red'kov, A. V.; Rodin, S. N.; Rubets, V. P.; Kukushkin, S. A.

2015-10-01

A new effect of the n-and p-type doping of the Si(100) substrate with a SiC film on the growth mechanism and structure of AlN and GaN epitaxial layers has been revealed. It has been experimentally shown that the mechanism of AlN and GaN layer growth on the surface of a SiC layer synthesized by substituting atoms on n- and p-Si substrates is fundamentally different. It has been found that semipolar AlN and GaN layers on the SiC/Si(100) surface grow in the epitaxial and polycrystalline structures on p-Si and n-Si substrates, respectively. A new method for synthesizing epitaxial semipolar AlN and GaN layers by chloride-hydride epitaxy on silicon substrates has been proposed.

Unusually large unit cell of lipid bicontinuous cubic phase: towards nature's length scales

Science.gov (United States)

Kim, Hojun; Leal, Cecilia

Lipid bicontinuous cubic phases are of great interest for drug delivery, protein crystallization, biosensing, and templates for directing hard material assembly. Structural modulations of lipid mesophases regarding phase identity and unit cell size are often necessary to augment loading and gain pore size control. One important example is the need for unit cells large enough to guide the crystallization of bigger proteins without distortion of the templating phase. In nature, bicontinuous cubic constructs achieve unit cell dimensions as high as 300 nm. However, the largest unit cell of lipid mesophases synthesized in the lab is an order of magnitude lower. In fact, it has been predicted theoretically that lipid bicontinuous cubic phases of unit cell dimensions exceeding 30 nm could not exist, as high membrane fluctuations would damp liquid crystalline order. Here we report non-equilibrium assembly methods of synthesizing metastable bicontinuous cubic phases with unit cell dimensions as high as 70 nm. The phases are stable for very long periods and become increasingly ordered as time goes by without changes to unit cell dimensions. We acknowledge the funding source as a NIH.

Limit cycles from a cubic reversible system via the third-order averaging method

Directory of Open Access Journals (Sweden)

Linping Peng

2015-04-01

Full Text Available This article concerns the bifurcation of limit cycles from a cubic integrable and non-Hamiltonian system. By using the averaging theory of the first and second orders, we show that under any small cubic homogeneous perturbation, at most two limit cycles bifurcate from the period annulus of the unperturbed system, and this upper bound is sharp. By using the averaging theory of the third order, we show that two is also the maximal number of limit cycles emerging from the period annulus of the unperturbed system.

Interfacial coupling and polarization of perovskite ABO3 heterostructures

Science.gov (United States)

Wu, Lijun; Wang, Zhen; Zhang, Bangmin; Yu, Liping; Chow, G. M.; Tao, Jing; Han, Myung-Geun; Guo, Hangwen; Chen, Lina; Plummer, E. W.; Zhang, Jiandi; Zhu, Yimei

2017-02-01

Interfaces with subtle difference in atomic and electronic structures in perovskite ABO3 heterostructures often yield intriguingly different properties, yet their exact roles remain elusive. In this article, we report an integrated study of unusual transport, magnetic, and structural properties of Pr0.67Sr0.33MnO3 (PSMO) films and La0.67Sr0.33MnO3 (LSMO) films of various thicknesses on SrTiO3 (STO) substrate. In particular, using atomically resolved imaging and electron energy-loss spectroscopy (EELS), we measured interface related local lattice distortion, BO6 octahedral rotation and cation-anion displacement induced polarization. In the very thin PSMO film, an unexpected interface-induced ferromagnetic polaronic insulator phase was observed during the cubic-to-tetragonal phase transition of the substrate STO, due to the enhanced electron-phonon interaction and atomic disorder in the film. On the other hand, for the very thin LSMO films we observed a remarkably deep polarization in non-ferroelectric STO substrate near the interface. Combining the experimental results with first principles calculations, we propose that the observed deep polarization is induced by an electric field originating from oxygen vacancies that extend beyond a dozen unit-cells from the interface, thus providing important evidence of the role of defects in the emergent interface properties of transition metal oxides.

Topics in Cubic Special Geometry

CERN Document Server

Bellucci, Stefano; Roychowdhury, Raju

2011-01-01

We reconsider the sub-leading quantum perturbative corrections to N=2 cubic special Kaehler geometries. Imposing the invariance under axion-shifts, all such corrections (but the imaginary constant one) can be introduced or removed through suitable, lower unitriangular symplectic transformations, dubbed Peccei-Quinn (PQ) transformations. Since PQ transformations do not belong to the d=4 U-duality group G4, in symmetric cases they generally have a non-trivial action on the unique quartic invariant polynomial I4 of the charge representation R of G4. This leads to interesting phenomena in relation to theory of extremal black hole attractors; namely, the possibility to make transitions between different charge orbits of R, with corresponding change of the supersymmetry properties of the supported attractor solutions. Furthermore, a suitable action of PQ transformations can also set I4 to zero, or vice versa it can generate a non-vanishing I4: this corresponds to transitions between "large" and "small" charge orbit...

The impact of electrode materials on 1/f noise in piezoelectric AlN contour mode resonators

Directory of Open Access Journals (Sweden)

Hoe Joon Kim

2018-05-01

Full Text Available This paper presents a detailed analysis on the impact of electrode materials and dimensions on flicker frequency (1/f noise in piezoelectric aluminum nitride (AlN contour mode resonators (CMRs. Flicker frequency noise is a fundamental noise mechanism present in any vibrating mechanical structure, whose sources are not generally well understood. 1 GHz AlN CMRs with three different top electrode materials (Al, Au, and Pt along with various electrode lengths and widths are fabricated to control the overall damping acting on the device. Specifically, the use of different electrode materials allows control of thermoelastic damping (TED, which is the dominant damping mechanism for high frequency AlN CMRs and largely depends on the thermal properties (i.e. thermal diffusivities and expansion coefficients of the metal electrode rather than the piezoelectric film. We have measured Q and 1/f noise of 68 resonators and the results show that 1/f noise decreases with increasing Q, with a power law dependence that is about 1/Q4. Interestingly, the noise level also depends on the type of electrode materials. Devices with Pt top electrode demonstrate the best noise performance. Our results help unveiling some of the sources of 1/f noise in these resonators, and indicate that a careful selection of the electrode material and dimensions could reduce 1/f noise not only in AlN-CMRs, but also in various classes of resonators, and thus enable ultra-low noise mechanical resonators for sensing and radio frequency applications.

High-temperature carrier density and mobility enhancements in AlGaN/GaN HEMT using AlN spacer layer

Science.gov (United States)

Ko, Tsung-Shine; Lin, Der-Yuh; Lin, Chia-Feng; Chang, Che-Wei; Zhang, Jin-Cheng; Tu, Shang-Ju

2017-04-01

In this paper, we experimentally studied the effect of AlN spacer layer on optical and electrical properties of AlGaN/GaN high electric mobility transistors (HEMTs) grown by metal organic chemical vapor deposition method. For AlGaN layer in HEMT structure, the Al composition of the sample was determined using x-ray diffraction and photoluminescence. Electrolyte electro-reflectance (EER) measurement not only confirmed the aluminum composition of AlGaN layer, but also determined the electric field strength on the AlGaN layer through the Franz-Keldysh oscillation phenomenon. This result indicated that the electric field on the AlGaN layer could be improved from 430 to 621 kV/cm when AlN spacer layer was inserted in HEMT structure, which increased the concentration of two dimensional electron gas (2DEG) and improve the mobility. The temperature dependent Hall results show that both the mobility and the carrier concentration of 2DEG would decrease abruptly causing HEMT loss of function due to phonon scattering and carrier thermal escape when temperature increases above a specific value. Meanwhile, our study also demonstrates using AlN spacer layer could be beneficial to allow the mobility and carrier density of 2DEG sustaining at high temperature region.

Dicyanamide Salts that Adopt Smectic, Columnar, or Bicontinuous Cubic Liquid-Crystalline Mesophases.

Science.gov (United States)

Park, Geonhui; Goossens, Karel; Shin, Tae Joo; Bielawski, Christopher W

2018-04-25

Although dicyanamide (i.e., [N(CN) 2 ] - ) has been commonly used to obtain low-viscosity, halogen-free, room-temperature ionic liquids, liquid-crystalline salts containing such anions have remained virtually unexplored. Here we report a series of amphiphilic dicyanamide salts that, depending on their structures and compositions, adopt smectic, columnar, or bicontinuous cubic thermotropic liquid-crystalline mesophases, even at room temperature in some cases. Their thermal properties were explored by polarized light optical microscopy, differential scanning calorimetry, thermogravimetric analysis (including evolved gas analysis), and variable-temperature synchrotron X-ray diffraction. Comparison of the thermal phase characteristics of these new liquid-crystalline salts featuring "V-shaped" [N(CN) 2 ] - anions with those of structural analogues containing [SCN] - , [BF 4 ] - , [PF 6 ] - , or [CF 3 SO 3 ] - anions indicated that not only the size of the counterion but also its shape should be considered in the development of mesomorphic salts. Collectively, these discoveries may be expected to facilitate the design of thermotropic ionic liquid crystals that form inverted-type bicontinuous cubic and other sophisticated liquid-crystalline phases. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Thermoluminescence properties of AlN ceramics

DEFF Research Database (Denmark)

Trinkler, L.; Christensen, P.; Agersnap Larsen, N.

1998-01-01

The paper describes thermoluminescence (TL) properties of AlN:Y2O3 ceramics irradiated with ionising radiation. A high TL sensitivity of AlN:Y2O3 ceramics to radiation encouraged a study of the AlN ceramics for application as a dosimetric material. The paper presents experimental data on: glow...... curve, emission spectrum, dose response, energy dependence, influence of heating rate and fading rate. The measured TL characteristics were compared with those of well-known, widely used TLDs, i.e. LiF:Mg,Ti, LiF:Mg,Cu,P and Al2O3:C. It is concluded that AlN:Y2O3 ceramics showing a radiation sensitivity...... which is approximately 50 times greater than that of LiF:Mg,Ti is an interesting dosimetry material; however due to a high fading rate of the TL of AlN:Y2O3 on storage at room temperature, a further development of the material for improving the fading characteristics is needed for its application...

Cubical sets as a classifying topos

DEFF Research Database (Denmark)

Spitters, Bas

Coquand’s cubical set model for homotopy type theory provides the basis for a computational interpretation of the univalence axiom and some higher inductive types, as implemented in the cubical proof assistant. We show that the underlying cube category is the opposite of the Lawvere theory of De...... Morgan algebras. The topos of cubical sets itself classifies the theory of ‘free De Morgan algebras’. This provides us with a topos with an internal ‘interval’. Using this interval we construct a model of type theory following van den Berg and Garner. We are currently investigating the precise relation...

Generalized Vaidya spacetime for cubic gravity

Science.gov (United States)

Ruan, Shan-Ming

2016-03-01

We present a kind of generalized Vaidya solution of a new cubic gravity in five dimensions whose field equations in spherically symmetric spacetime are always second order like the Lovelock gravity. We also study the thermodynamics of its spherically symmetric apparent horizon and get its entropy expression and generalized Misner-Sharp energy. Finally, we present the first law and second law hold in this gravity. Although all the results are analogous to those in Lovelock gravity, we in fact introduce the contribution of a new cubic term in five dimensions where the cubic Lovelock term is just zero.

Comparison of Chlamydia trachomatis serovar L2 growth in polarized genital epithelial cells grown in three-dimensional culture with non-polarized cells

OpenAIRE

Dessus-Babus, Sophie; Moore, Cheryl G.; Whittimore, Judy D.; Wyrick, Priscilla B.

2008-01-01

A common model for studying Chlamydia trachomatis and growing chlamydial stocks uses Lymphogranuloma venereum serovar L2 and non-polarized HeLa cells. However, recent publications indicate that the growth rate and progeny yields can vary considerably for a particular strain depending on the cell line/type used, and seem to be partially related to cell tropism. In the present study, the growth of invasive serovar L2 was compared in endometrial HEC-1B and endocervical HeLa cells polarized on co...

Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy.

Science.gov (United States)

Sang, Ling; Zhu, Qin Sheng; Yang, Shao Yan; Liu, Gui Peng; Li, Hui Jie; Wei, Hong Yuan; Jiao, Chun Mei; Liu, Shu Man; Wang, Zhan Guo; Zhou, Xiao Wei; Mao, Wei; Hao, Yue; Shen, Bo

2014-01-01

The band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterojunctions are measured by X-ray photoemission spectroscopy. A large forward-backward asymmetry is observed in the non-polar GaN/AlN and AlN/GaN heterojunctions. The valence-band offsets in the non-polar A-plane GaN/AlN and AlN/GaN heterojunctions are determined to be 1.33 ± 0.16 and 0.73 ± 0.16 eV, respectively. The large valence-band offset difference of 0.6 eV between the non-polar GaN/AlN and AlN/GaN heterojunctions is considered to be due to piezoelectric strain effect in the non-polar heterojunction overlayers.

Effect of Solution Treatment on Precipitation Behaviors, Age Hardening Response and Creep Properties of Elektron21 Alloy Reinforced by AlN Nanoparticles.

Science.gov (United States)

Saboori, Abdollah; Padovano, Elisa; Pavese, Matteo; Dieringa, Hajo; Badini, Claudio

2017-12-02

In the present study, the solution and ageing treatments behavior of Mg-RE-Zr-Zn alloy (Elektron21) and its nano-AlN reinforced nanocomposites have been evaluated. The properties of the thermal-treated materials were investigated in terms of Vickers hardness, the area fraction of precipitates, microstructure and phase composition. The solution treatments were performed by treating at 520 °C, 550 °C and 580 °C in argon atmosphere. The outcomes show that the hardness of the solutionized alloys was slightly affected by the solution temperature. X-ray diffraction and image analysis revealed that the complete dissolution of precipitates was not possible, neither for Elektron21 (El21) nor for its AlN containing nanocomposites. The ageing treatment of El21 led to a significant improvement in hardness after 20 h, while for longer times, it progressively decreased. The effect of ageing on the hardness of El21-AlN composites was found to be much less than this effect on the hardness of the host alloy. Electron backscatter diffraction (EBSD) analysis of El21 and El21-1%AlN after solution treatment confirm the random orientation of grains with a typical texture of random distribution. The as-cast creep results showed that the incorporation of nanoparticles could effectively improve the creep properties, while the results after solution treatment at 520 °C for 12 h followed by ageing treatment at 200 °C for 20 h confirmed that the minimum creep rate of T6-El21 was almost equal to the as-cast El21-AlN.

Magma transport in sheet intrusions of the Alnö carbonatite complex, central Sweden.

Science.gov (United States)

Andersson, Magnus; Almqvist, Bjarne S G; Burchardt, Steffi; Troll, Valentin R; Malehmir, Alireza; Snowball, Ian; Kübler, Lutz

2016-06-10

Magma transport through the Earth's crust occurs dominantly via sheet intrusions, such as dykes and cone-sheets, and is fundamental to crustal evolution, volcanic eruptions and geochemical element cycling. However, reliable methods to reconstruct flow direction in solidified sheet intrusions have proved elusive. Anisotropy of magnetic susceptibility (AMS) in magmatic sheets is often interpreted as primary magma flow, but magnetic fabrics can be modified by post-emplacement processes, making interpretation of AMS data ambiguous. Here we present AMS data from cone-sheets in the Alnö carbonatite complex, central Sweden. We discuss six scenarios of syn- and post-emplacement processes that can modify AMS fabrics and offer a conceptual framework for systematic interpretation of magma movements in sheet intrusions. The AMS fabrics in the Alnö cone-sheets are dominantly oblate with magnetic foliations parallel to sheet orientations. These fabrics may result from primary lateral flow or from sheet closure at the terminal stage of magma transport. As the cone-sheets are discontinuous along their strike direction, sheet closure is the most probable process to explain the observed AMS fabrics. We argue that these fabrics may be common to cone-sheets and an integrated geology, petrology and AMS approach can be used to distinguish them from primary flow fabrics.

Puente Alnö – Suecia

Directory of Open Access Journals (Sweden)

Editorial, Equipo

1974-07-01

Full Text Available This bridge that joins the island of Alnô with the peninsula near the port of Sundsvall In the north of Sweden is one of the many of prestressed concrete that have been constructed lately all over the world with the system of successive corbels. Until recently it was the longest bridge in the country and distinguishes itself by the elegance and slenderness of its longer arches and by the deep foundation system used to construct the four central bridge piers. It has been planned and constructed by Skanska Cementgjuteriet, a firm that is specializing in this type of structure.Este puente, que une la isla de Alno con la península, cerca del puerto de Sundsvall, en el norte de Suecia, es uno de los muchos de hormigón pretensado que se han construido últimamente en todo el mundo por el sistema de voladizos sucesivos. Hasta hace poco era el puente más largo del país y destaca por la elegancia y esbeltez de sus arcos más largos y por el sistema de cimentación profunda empleado para construir las cuatro pilas centrales. Ha sido proyectado y construido por Skanska Cementgjuteriet, empresa que se ha especializado en este tipo de estructura.

High temperature electron cyclotron resonance etching of GaN, InN, and AlN

International Nuclear Information System (INIS)

Shul, R.J.; Kilcoyne, S.P.; Hagerott Crawford, M.; Parmeter, J.E.; Vartuli, C.B.; Abernathy, C.R.; Pearton, S.J.

1995-01-01

Electron cyclotron resonance etch rates for GaN, InN, and AlN are reported as a function of temperature for Cl 2 /H 2 /CH 4 /Ar and Cl 2 /H 2 /Ar plasmas. Using Cl 2 /H 2 /CH 4 /Ar plasma chemistry, GaN etch rates remain relatively constant from 30 to 125 degree C and then increase to a maximum of 2340 A/min at 170 degree C. The InN etch rate decreases monotonically from 30 to 150 degree C and then rapidly increases to a maximum of 2300 A/min at 170 degree C. This is the highest etch rate reported for this material. The AlN etch rate decreases throughout the temperature range studied with a maximum of 960 A/min at 30 degree C. When CH 4 is removed from the plasma chemistry, the GaN and InN etch rates are slightly lower, with less dramatic changes with temperature. The surface composition of the III--V nitrides remains unchanged after exposure to the Cl 2 /H 2 /CH 4 /Ar plasma over the temperatures studied

Effective-medium theory for nonlinear magneto-optics in magnetic granular alloys: cubic nonlinearity

International Nuclear Information System (INIS)

Granovsky, Alexander B.; Kuzmichov, Michail V.; Clerc, J.-P.; Inoue, Mitsuteru

2003-01-01

We propose a simple effective-medium approach for calculating the effective dielectric function of a magnetic metal-insulator granular alloy in which there is a weakly nonlinear relation between electric displacement D and electric field E for both constituent materials of the form D i =ε i (0) E i +χ i (3) |E i | 2 E i . We assume that linear ε i (0) and cubic nonlinear χ i (3) dielectric functions are diagonal and linear with magnetization non-diagonal components. For such metal-insulator composite magneto-optical effects depend on a light intensity and the effective cubic dielectric function χ eff (3) can be significantly greater (up to 10 3 times) than that for constituent materials. The calculation scheme is based on the Bergman and Stroud-Hui theory of nonlinear optical properties of granular matter. The giant cubic magneto-optical nonlinearity is found for composites with metallic volume fraction close to the percolation threshold and at a resonance of optical conductivity. It is shown that a composite may exhibit nonlinear magneto-optics even when both constituent materials have no cubic magneto-optical nonlinearity

A three-dimensional polarization domain retrieval method from electron diffraction data

International Nuclear Information System (INIS)

Pennington, Robert S.; Koch, Christoph T.

2015-01-01

We present an algorithm for retrieving three-dimensional domains of picometer-scale shifts in atomic positions from electron diffraction data, and apply it to simulations of ferroelectric polarization in BaTiO 3 . Our algorithm successfully and correctly retrieves polarization domains in which the Ti atom positions differ by less than 3 pm (0.4% of the unit cell diagonal distance) with 5 and 10 nm depth resolution along the beam direction, and we also retrieve unit cell strain, corresponding to tetragonal-to-cubic unit cell distortions, for 10 nm domains. Experimental applicability is also discussed. - Highlights: • We show a retrieval method for ferroelectric polarization from TEM diffraction data. • Simulated strain and polarization variations along the beam direction are retrieved. • This method can be used for 3D strain and polarization mapping without specimen tilt

Vacuum polarization and non-Newtonian gravitation

International Nuclear Information System (INIS)

Long, D.R.

1980-01-01

Gell-Mann and Low have emphasized that, as first pointed out by Uehling and Serber, vacuum polarization effects produce a logarithmic modification to the Coulomb potential at small distances. Here, it is pointed out that, if these same considerations are applied to gravitation, the logarithmic term will have a sign opposite to that in the Coulomb case and in agreement with recent laboratory results on the gravitational ''constant''. Of considerable importance is the fact that such vacuum polarization effects cannot be observed in null experiments to test the gravitational inverse square law because the polarizing field is absent. It is a striking circumstance that the coefficient of the logarithm in QED is nearly the same as that found in gravitational experiments. (author)

Spinning solitons in cubic-quintic nonlinear media

Indian Academy of Sciences (India)

Spinning solitons in cubic-quintic nonlinear media ... features of families of bright vortex solitons (doughnuts, or 'spinning' solitons) in both conservative and dissipative cubic-quintic nonlinear media. ... Pramana – Journal of Physics | News.

Thermodynamics of inversion-domain boundaries in aluminum nitride: Interplay between interface energy and electric dipole potential energy

Science.gov (United States)

Zhang, J. Y.; Xie, Y. P.; Guo, H. B.; Chen, Y. G.

2018-05-01

Aluminum nitride (AlN) has a polar crystal structure that is susceptible to electric dipolar interactions. The inversion domains in AlN, similar to those in GaN and other wurtzite-structure materials, decrease the energy associated with the electric dipolar interactions at the expense of inversion-domain boundaries, whose interface energy has not been quantified. We study the atomic structures of six different inversion-domain boundaries in AlN, and compare their interface energies from density functional theory calculations. The low-energy interfaces have atomic structures with similar bonding geometry as those in the bulk phase, while the high-energy interfaces contain N-N wrong bonds. We calculate the formation energy of an inversion domain using the interface energy and dipoles' electric-field energy, and find that the distribution of the inversion domains is an important parameter for the microstructures of AlN films. Using this thermodynamic model, it is possible to control the polarity and microstructure of AlN films by tuning the distribution of an inversion-domain nucleus and by selecting the low-energy synthesis methods.

Effect of Pulse Polarity on Thresholds and on Non-monotonic Loudness Growth in Cochlear Implant Users.

Science.gov (United States)

Macherey, Olivier; Carlyon, Robert P; Chatron, Jacques; Roman, Stéphane

2017-06-01

Most cochlear implants (CIs) activate their electrodes non-simultaneously in order to eliminate electrical field interactions. However, the membrane of auditory nerve fibers needs time to return to its resting state, causing the probability of firing to a pulse to be affected by previous pulses. Here, we provide new evidence on the effect of pulse polarity and current level on these interactions. In experiment 1, detection thresholds and most comfortable levels (MCLs) were measured in CI users for 100-Hz pulse trains consisting of two consecutive biphasic pulses of the same or of opposite polarity. All combinations of polarities were studied: anodic-cathodic-anodic-cathodic (ACAC), CACA, ACCA, and CAAC. Thresholds were lower when the adjacent phases of the two pulses had the same polarity (ACCA and CAAC) than when they were different (ACAC and CACA). Some subjects showed a lower threshold for ACCA than for CAAC while others showed the opposite trend demonstrating that polarity sensitivity at threshold is genuine and subject- or electrode-dependent. In contrast, anodic (CAAC) pulses always showed a lower MCL than cathodic (ACCA) pulses, confirming previous reports. In experiments 2 and 3, the subjects compared the loudness of several pulse trains differing in current level separately for ACCA and CAAC. For 40 % of the electrodes tested, loudness grew non-monotonically as a function of current level for ACCA but never for CAAC. This finding may relate to a conduction block of the action potentials along the fibers induced by a strong hyperpolarization of their central processes. Further analysis showed that the electrodes showing a lower threshold for ACCA than for CAAC were more likely to yield a non-monotonic loudness growth. It is proposed that polarity sensitivity at threshold reflects the local neural health and that anodic asymmetric pulses should preferably be used to convey sound information while avoiding abnormal loudness percepts.

Effects of external surface charges on the enhanced piezoelectric potential of ZnO and AlN nanowires and nanotubes

Directory of Open Access Journals (Sweden)

Seong Min Kim

2012-12-01

Full Text Available We theoretically investigate external surface charge effects on piezoelectric potential of ZnO and AlN nanowires (NWs and nanotubes (NTs under uniform compression. The free carrier depletion caused by negative surface charges via surface functionalization on vertically compressed ZnO and AlN NWs/NTs is simulated using finite element calculation; this indicates the enhancement of piezoelectric potential is due to the free carriers (electrons being fully depleted at the critical surface charge density. Numerical simulations reveal that full coverage of surface charges surrounding the NTs increases the piezoelectric output potential exponentially within a relatively smaller range of charge density compared to the case of NWs for a typical donor concentration (∼1017 cm−3. The model can be used to design functional high-power semiconducting piezoelectric nanogenerators.

Role of the electronegativity for the interface properties of non-polar heterostructures

KAUST Repository

Nazir, Safdar; Singh, Nirpendra; Kahaly, M. Upadhyay; Schwingenschlö gl, Udo

2012-01-01

Density functional theory is used to investigate the interfaces in the non-polar ATiO 3/SrTiO 3 (A=Pb, Ca, Ba) heterostructures. All TiO 2-terminated interfaces show an insulating behavior. By reduction of the O content in the AO, SrO, and TiO 2

Bifurcation of rupture path by linear and cubic damping force

Science.gov (United States)

Dennis L. C., C.; Chew X., Y.; Lee Y., C.

2014-06-01

Bifurcation of rupture path is studied for the effect of linear and cubic damping. Momentum equation with Rayleigh factor was transformed into ordinary differential form. Bernoulli differential equation was obtained and solved by the separation of variables. Analytical or exact solutions yielded the bifurcation was visible at imaginary part when the wave was non dispersive. For the dispersive wave, bifurcation of rupture path was invisible.

Non-polarized cytokine profile of a long-term non-progressor HIV infected patient.

Science.gov (United States)

Pina, Ana Flávia; Matos, Vanessa Terezinha Gubert de; Bonin, Camila Mareti; Dal Fabbro, Márcia Maria Ferrairo Janini; Tozetti, Inês Aparecida

The HIV-1 initial viral infection may present diverse clinical and laboratory course and lead to rapid, intermediate, or long-term progression. Among the group of non-progressors, the elite controllers are those who control the infection most effectively, in the absence of antiretroviral therapy (ART). In this paper, the TH1, TH2 and TH17 cytokines profiles are described, as well as clinical and laboratory aspects of an HIV-infected patient with undetectable viral load without antiretroviral therapy. Production of IL-6, IL-10, TNF-α, IFN-γ, and IL-17 was detected; in contrast IL-4 was identified. Host-related factors could help explain such a level of infection control, namely the differentiated modulation of the cellular immune response and a non-polarized cytokine response of the TH1 and TH2 profiles. Copyright © 2018 Sociedade Brasileira de Infectologia. Published by Elsevier Editora Ltda. All rights reserved.

Ab-Initio Description and Prediction of Properties of Carbon-Based and Other Non-Metallic Materials

Science.gov (United States)

Bagayoko, D.; Zhao, G. L.; Hasan, S.

2001-01-01

We have resolved the long-standing problem consisting of 30%-50% theoretical underestimates of the band gaps of non-metallic materials. We describe the Bagayoko, Zhao, and Williams (BZW) method that rigorously circumvents the basis-set and variational effect presumed to be a cause of these underestimates. We present ab-initio, computational results that are in agreement with experiment for diamond (C), silicon (Si), silicon carbides (3C-SiC and 4H-SiC), and other semiconductors (GaN, BaTiO3, AlN, ZnSe, ZnO). We illustrate the predictive capability of the BZW method in the case of the newly discovered cubic phase of silicon nitride (c-Si3N4) and of selected carbon nanotabes [(10,0), and (8,4)]. Our conclusion underscores the inescapable need for the BZW method in ab-initio calculations that employ a basis set in a variational approach. Current nanoscale trends amplify this need. We estimate that the potential impact of applications of the BZW method in advancing our understanding of nonmetallic materials, in informing experiment, and particularly in guiding device design and fabrication is simply priceless.

Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system

Directory of Open Access Journals (Sweden)

Takeshi Aoki

2015-08-01

Full Text Available This paper presents a compressive study on the fabrication and optimization of GaAs metal–oxide–semiconductor (MOS structures comprising a Al2O3 gate oxide, deposited via atomic layer deposition (ALD, with an AlN interfacial passivation layer prepared in situ via metal–organic chemical vapor deposition (MOCVD. The established protocol afforded self-limiting growth of Al2O3 in the atmospheric MOCVD reactor. Consequently, this enabled successive growth of MOCVD-formed AlN and ALD-formed Al2O3 layers on the GaAs substrate. The effects of AlN thickness, post-deposition anneal (PDA conditions, and crystal orientation of the GaAs substrate on the electrical properties of the resulting MOS capacitors were investigated. Thin AlN passivation layers afforded incorporation of optimum amounts of nitrogen, leading to good capacitance–voltage (C–V characteristics with reduced frequency dispersion. In contrast, excessively thick AlN passivation layers degraded the interface, thereby increasing the interfacial density of states (Dit near the midgap and reducing the conduction band offset. To further improve the interface with the thin AlN passivation layers, the PDA conditions were optimized. Using wet nitrogen at 600 °C was effective to reduce Dit to below 2 × 1012 cm−2 eV−1. Using a (111A substrate was also effective in reducing the frequency dispersion of accumulation capacitance, thus suggesting the suppression of traps in GaAs located near the dielectric/GaAs interface. The current findings suggest that using an atmosphere ALD process with in situ AlN passivation using the current MOCVD system could be an efficient solution to improving GaAs MOS interfaces.

Influence of substrate biasing on the growth of c-axis oriented AlN thin films by RF reactive sputtering in pure nitrogen

Energy Technology Data Exchange (ETDEWEB)

Monteagudo-Lerma, L.; Naranjo, F.B.; Gonzalez-Herraez, M. [Departamento de Electronica, Escuela Politecnica, Universidad de Alcala, Campus Universitario, 28871 Alcala de Henares (Spain); Fernandez, S. [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Avda. Complutense 22, 28040 Madrid (Spain)

2012-03-15

We report on the investigation of the influence of deposition conditions on structural, morphological and optical properties of AlN thin films deposited on sapphire (Al{sub 2}O{sub 3}) substrates by radio-frequency (RF) reactive sputtering. The deposition parameters studied are RF power, substrate temperature and substrate bias, while using pure nitrogen as reactive gas. The effect of such deposition parameters on AlN film properties are analyzed by different characterization methods as high resolution X-ray diffraction (HRXRD), field emission scanning electron microscopy (FESEM) and linear optical transmission. AlN thin films with a full-width at half-maximum (FWHM) of the rocking curve obtained for the (0002) diffraction peak of 1.2 are achieved under optimized conditions. The time resolved evolution of the self and externally-induced biasing of the substrate during deposition process is monitored and analyzed in terms of the rate of atomic species incorporation into the layer. The bias-induced change of the atomic incorporation leads to an enhancement in the structural quality of the layer and an increase of the deposition rate. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Control of two-dimensional growth of AlN and high Al-content AlGaN-based MQWs for deep-UV LEDs

Directory of Open Access Journals (Sweden)

Weihuang Yang

2013-05-01

Full Text Available Dense and atomically flat AlN film with root-mean-square roughness value of 0.32 nm was grown on sapphire substrate at a relatively lower temperature by using a three-step epitaxy technique. On the basis of this AlN template, AlGaN-based multiple quantum wells (MQWs with atomically flat hetero-interfaces were epitaxially grown to suppress nonradiative recombination by introducing In as a surfactant during simultaneous source supply. As a result, single intense- and narrow-peaked photoluminescence was obtained from the MQWs. Finally, the deep ultraviolet light emitting diodes with well-behaved I-V characteristic and strong electroluminescence in the range of 256–312 nm were fabricated successfully.

Control over the morphology of AlN during molecular beam epitaxy with the plasma activation of nitrogen on Si (111) substrates

International Nuclear Information System (INIS)

Mizerov, A. M.; Kladko, P. N.; Nikitina, E. V.; Egorov, A. Yu.

2015-01-01

The results of studies of the growth kinetics of AlN layers during molecular beam epitaxy with the plasma activation of nitrogen using Si (111) substrates are presented. The possibility of the growth of individual AlN/Si (111) nanocolumns using growth conditions with enrichment of the surface with metal near the formation mode of Al drops, at a substrate temperature close to maximal, during molecular beam epitaxy with the plasma activation of nitrogen (T s ≈ 850°C) is shown. The possibility of growing smooth AlN layers on a nanocolumnar AlN/Si (111) buffer with the use of T s ≈ 750°C and growth conditions providing enrichment with metal is shown

Control over the morphology of AlN during molecular beam epitaxy with the plasma activation of nitrogen on Si (111) substrates

Energy Technology Data Exchange (ETDEWEB)

Mizerov, A. M., E-mail: mizerov@beam.ioffe.ru; Kladko, P. N.; Nikitina, E. V.; Egorov, A. Yu. [Russian Academy of Sciences, St. Petersburg Academic University-Nanotechnology Research and Education Centre (Russian Federation)

2015-02-15

The results of studies of the growth kinetics of AlN layers during molecular beam epitaxy with the plasma activation of nitrogen using Si (111) substrates are presented. The possibility of the growth of individual AlN/Si (111) nanocolumns using growth conditions with enrichment of the surface with metal near the formation mode of Al drops, at a substrate temperature close to maximal, during molecular beam epitaxy with the plasma activation of nitrogen (T{sub s} ≈ 850°C) is shown. The possibility of growing smooth AlN layers on a nanocolumnar AlN/Si (111) buffer with the use of T{sub s} ≈ 750°C and growth conditions providing enrichment with metal is shown.

Anomalous band-gap bowing of AlN1−xPx alloy

International Nuclear Information System (INIS)

Winiarski, M.J.; Polak, M.; Scharoch, P.

2013-01-01

Highlights: •Structural and electronic properties of AlN 1−x P x from first principles. •The supercell and the virtual crystall approximation methods applied and compared. •Anomalously high band-gap bowing found. •Similarities of band-gap behavior to that in BN 1−x P x noticed. •Performance of MBJLDA with the pseudopotential approach discussed. -- Abstract: Electronic structure of zinc blende AlN 1−x P x alloy has been calculated from first principles. Structural optimization has been performed within the framework of LDA and the band-gaps calculated with the modified Becke–Jonson (MBJLDA) method. Two approaches have been examined: the virtual crystal approximation (VCA) and the supercell-based calculations (SC). The composition dependence of the lattice parameter obtained from the SC obeys Vegard’s law whereas the volume optimization in the VCA leads to an anomalous bowing of the lattice constant. A strong correlation between the band-gaps and the structural parameter in the VCA method has been observed. On the other hand, in the SC method the supercell size and atoms arrangement (clustered vs. uniform) appear to have a great influence on the computed band-gaps. In particular, an anomalously big band-gap bowing has been found in the case of a clustered configuration with relaxed geometry. Based on the performed tests and obtained results some general features of MBJLDA are discussed and its performance for similar systems predicted

Explicit Gaussian quadrature rules for C^1 cubic splines with symmetrically stretched knot sequence

KAUST Repository

Ait-Haddou, Rachid; Barton, Michael; Calo, Victor M.

2015-01-01

We provide explicit expressions for quadrature rules on the space of C^1 cubic splines with non-uniform, symmetrically stretched knot sequences. The quadrature nodes and weights are derived via an explicit recursion that avoids an intervention

studies dielectric behaviour of some long chain alcohols and their mixtures with a non-polar solvent at various concentration

International Nuclear Information System (INIS)

Yaqub, M.; Ahmed, S.S.; Hussain, A.

2006-01-01

Dielectric constant, refractive index and the Kirkwood linear correlation factor of 1-propanol, 1-butanol and 1-pentanol in mixtures with carbon tetrachloride at various concentration have been measured at fixed frequency (100 KHz) at 303.15 K. For the study of dielectric properties of polar molecules in a non-polar solvent at different concentrations, polarization per unit volume and excess free-energy of mixing were evaluated at this temperature. In order to study the association of polar molecules in such a non-polar solvent, the Kirkwood correlation factor (g) between molecular pairs, which exists due to the hydrogen bond association suggesting the presence of some dimension in the liquid phase with a number of dimmers, was determined. The refractive index and dielectric constant measurements are expected to shed some light on the configuration of molecules in various mixtures, and give some idea about the specific interactions between components, which decrese with the increase in the concentration of alcohol. All the three mixtures showed different behaviour for the value of correlation factor (g) as a function of concentration. The response of 1-pentanol was broadly identical to that of small chain alcohols. The different behaviour of the correlation factor (g) was interpreted in terms of the Kirkwood-Frohlich theory, as it takes into account, explicitly, such type of short and long range interactions of a mixture of polar molecules with non-polar solvents. (author)

Fermi surfaces of the pyrite-type cubic AuSb2 compared with split Fermi surfaces of the ullmannite-type cubic chiral NiSbS and PdBiSe

Science.gov (United States)

Nishimura, K.; Kakihana, M.; Nakamura, A.; Aoki, D.; Harima, H.; Hedo, M.; Nakama, T.; Ōnuki, Y.

2018-05-01

We grew high-quality single crystals of AuSb2 with the pyrite (FeS2)-type cubic structure by the Bridgman method and studied the Fermi surface properties by the de Haas-van Alphen (dHvA) experiment and the full potential LAPW band calculation. The Fermi surfaces of AuSb2 are found to be similar to those of NiSbS and PdBiSe with the ullmannite (NiSbS)-type cubic chiral structure because the crystal structures are similar each other and the number of valence electrons is the same between two different compounds. Note that each Fermi surface splits into two Fermi surfaces in NiSbS and PdBiSe, reflecting the non-centrosymmetric crystal structure.

A Note on Cubic Convolution Interpolation

OpenAIRE

Meijering, E.; Unser, M.

2003-01-01

We establish a link between classical osculatory interpolation and modern convolution-based interpolation and use it to show that two well-known cubic convolution schemes are formally equivalent to two osculatory interpolation schemes proposed in the actuarial literature about a century ago. We also discuss computational differences and give examples of other cubic interpolation schemes not previously studied in signal and image processing.

Collective dynamics and self-diffusion in a diblock copolymer melt in the body-centered cubic phase

DEFF Research Database (Denmark)

Papadakis, C.M.; Rittig, F.; Almdal, K.

2004-01-01

The structure and dynamics of a strongly asymmetric poly(ethylene propylene)poly (dimethylsiloxane) (PEP-PDMS) diblock copolymer in the melt have been studied over a wide temperature range. Small-angle neutron scattering reveals that the sample exhibits two stable phases in this temperature range......: Above the order-to-disorder transition temperature, it is disordered, whereas the domain structure is body-centered cubic (bcc) below, being stable down to the lowest temperatures measured. In the disordered state, dynamic light scattering (DLS) in the polarized geometry reveals the heterogeneity mode...

Effective-medium theory for nonlinear magneto-optics in magnetic granular alloys: cubic nonlinearity

Energy Technology Data Exchange (ETDEWEB)

Granovsky, Alexander B. E-mail: granov@magn.ru; Kuzmichov, Michail V.; Clerc, J.-P.; Inoue, Mitsuteru

2003-03-01

We propose a simple effective-medium approach for calculating the effective dielectric function of a magnetic metal-insulator granular alloy in which there is a weakly nonlinear relation between electric displacement D and electric field E for both constituent materials of the form D{sub i}={epsilon}{sub i}{sup (0)}E{sub i} +{chi}{sub i}{sup (3)}|E{sub i}|{sup 2}E{sub i}. We assume that linear {epsilon}{sub i}{sup (0)} and cubic nonlinear {chi}{sub i}{sup (3)} dielectric functions are diagonal and linear with magnetization non-diagonal components. For such metal-insulator composite magneto-optical effects depend on a light intensity and the effective cubic dielectric function {chi}{sub eff}{sup (3)} can be significantly greater (up to 10{sup 3} times) than that for constituent materials. The calculation scheme is based on the Bergman and Stroud-Hui theory of nonlinear optical properties of granular matter. The giant cubic magneto-optical nonlinearity is found for composites with metallic volume fraction close to the percolation threshold and at a resonance of optical conductivity. It is shown that a composite may exhibit nonlinear magneto-optics even when both constituent materials have no cubic magneto-optical nonlinearity.

The effect of ammonia flow in the AlN spacer on the electrical properties of InAlN/AlN/GaN HEMT structures

International Nuclear Information System (INIS)

Gamarra, Piero; Lacam, Cedric; Magis, Michelle; Tordjman, Maurice; Di Forte Poisson, Marie-Antoinette

2012-01-01

During the past few years it has been reported that a thin AlN spacer of few nanometers needs to be inserted in InAlN/GaN high electron mobility transistors (HEMTs) to obtain high 2DEG carrier mobility. This work presents a systematic study of the effects of varying the ammonia flow in the AlN spacer of InAlN/AlN/GaN HEMTs grown by low pressure metalorganic vapour phase epitaxy (LP-MOVPE). The strain state, the surface roughness and the growth rate of AlN were found to be dependent on the V/III ratio. In addition the ammonia flow in the interlayer has a strong impact on the structural properties of the subsequent InAlN barrier layer and on the electrical properties of the structure. A sheet resistance as low as 327 Ω/□ with a sheet carrier density of 1.5 x 10 13 cm -2 has been obtained at room temperature. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

The effect of ammonia flow in the AlN spacer on the electrical properties of InAlN/AlN/GaN HEMT structures

Energy Technology Data Exchange (ETDEWEB)

Gamarra, Piero; Lacam, Cedric; Magis, Michelle; Tordjman, Maurice; Di Forte Poisson, Marie-Antoinette [III-V Lab., Marcussis (France)

2012-01-15

During the past few years it has been reported that a thin AlN spacer of few nanometers needs to be inserted in InAlN/GaN high electron mobility transistors (HEMTs) to obtain high 2DEG carrier mobility. This work presents a systematic study of the effects of varying the ammonia flow in the AlN spacer of InAlN/AlN/GaN HEMTs grown by low pressure metalorganic vapour phase epitaxy (LP-MOVPE). The strain state, the surface roughness and the growth rate of AlN were found to be dependent on the V/III ratio. In addition the ammonia flow in the interlayer has a strong impact on the structural properties of the subsequent InAlN barrier layer and on the electrical properties of the structure.istance as low as 327 {omega}/{open_square} with a sheet carrier density of 1.5 x 10{sup 13} cm{sup -2} has been obtained at room temperature. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Non-uniformly polarized beams across their transverse profiles: an introductory study for undergraduate optics courses

International Nuclear Information System (INIS)

Piquero, Gemma; Vargas-Balbuena, Javier

2004-01-01

We provide a simple theoretical study of beams non-uniformly polarized across their transverse sections which can be introduced in undergraduate optics courses. In order to generate such beams we propose to use a slightly convergent (or divergent) linearly and uniformly polarized beam impinging on an anisotropic uniaxial material with the beam propagation direction along the optic axis. Analytical expressions for the Jones vector, Stokes parameters, ellipticity and azimuth at each point of the transverse section, perpendicular to the propagation direction, are obtained at the output of this system. By means of these parameters a detailed description of the state of polarization across the transverse profile is given

Universal centers in the cubic trigonometric Abel equation

Directory of Open Access Journals (Sweden)

Jaume Giné

2014-02-01

Full Text Available We study the center problem for the trigonometric Abel equation $d \\rho/ d \\theta= a_1 (\\theta \\rho^2 + a_2(\\theta \\rho^3,$ where $a_1(\\theta$ and $a_2(\\theta$ are cubic trigonometric polynomials in $\\theta$. This problem is closely connected with the classical Poincaré center problem for planar polynomial vector fields. A particular class of centers, the so-called universal centers or composition centers, is taken into account. An example of non-universal center and a characterization of all the universal centers for such equation are provided.

On q-power cycles in cubic graphs

DEFF Research Database (Denmark)

Bensmail, Julien

2017-01-01

In the context of a conjecture of Erdos and Gyárfás, we consider, for any q ≥ 2, the existence of q-power cycles (i.e. with length a power of q) in cubic graphs. We exhibit constructions showing that, for every q ≥ 3, there exist arbitrarily large cubic graphs with no q-power cycles. Concerning...... the remaining case q = 2 (which corresponds to the conjecture of Erdos and Gyárfás), we show that there exist arbitrarily large cubic graphs whose only 2-power cycles have length 4 only, or 8 only....

Photon beam polarization and non-dipolar angular distributions

International Nuclear Information System (INIS)

Peshkin, M.

1996-01-01

Angular distributions of ejecta from unoriented atoms and molecules depend upon the polarization state of the incident x-rays as well as upon the dynamics of the physical systems being studied. I recommend a simple geometrical way of looking at the polarization and its effects upon angular distributions. The polarization is represented as a vector in a parameter space that faithfully represents the polarization of the beam. The simple dependence of the angular dependence of the angular distributions on the polarization vector enables easy extraction of the dynamical information contained in those angular distributions. No new physical results emerge from this geometrical approach, but known consequences of the symmetries appear in an easily visualized form that I find pleasing and that has proved to be useful for planning experiments and for analyzing data

Facile synthesis and characterisation of AlNs using Protein Rich Solution extracted from sewage sludge and its application for ultrasonic assisted dye adsorption: Isotherms, kinetics, mechanism and RSM design.

Science.gov (United States)

Mary Ealias, Anu; Saravanakumar, M P

2018-01-15

Protein Rich Solution (PRS) was prepared from the sewage sludge with ultrasonic assistance. With PRS, aluminium based nanosheet like materials (AlNs) were synthesised for the ultrasonic removal of Congo Red (CR) and Crystal Violet (CV) dyes. PRS was characterised by UV, EEM and NMR spectral analysis. AlNs were characterised by FTIR, XRD, TGA, BET, SEM, AFM, TEM and XPS analysis. The point of zero charge of AlNs was found to be 5.4. The BET analysis ensured that the average pore diameter and total pore volume of AlNs as 8.464 nm and 0.11417 cc/g respectively. The efficacy of AlNs for the removal of toxic dyes was tested by performing Response surface methodology (RSM) designed experiments. The effect of sonication time, dosage and initial concentration on dye removal was studied at an optimised pH value. Langmuir, Freundlich and Temkin isotherm models were examined. The maximum adsorption capacity was found to be 121.951 and 105.263 mg/g for CR and CV respectively. The kinetic models like pseudo-first order, pseudo-second order, Elovich and intra-particle diffusion were examined to understand the mechanism behind it. The results revealed that the use of ultrasonication enhanced the mass transfer. The experimental studies on the influence of ultrasound power indicated a positive relation with the removal efficiency. The results of thermodynamic study revealed that the process was spontaneous and exothermic for both the dyes. The increase in ionic strength increased the removal efficiency for both CR and CV. RSM predicted the optimum adsorbent dosages as 0.16 g for 50 mg/L of CR and 0.12 g for 100 mg/L of CV dye solutions. The values of half-life and fractional adsorption for both CR and CV suggested that the low cost AlNs has high potential to remove the toxic industrial dyes. Copyright © 2017 Elsevier Ltd. All rights reserved.

Cu-doped AlN: A possible spinaligner at room-temperature grown by molecular beam epitaxy?

Science.gov (United States)

Ganz, P. R.; Schaadt, D. M.

2011-12-01

Cu-doped AlN was prepared by plasma assisted molecular beam epitaxy on C-plane sapphire substrates. The growth conditions were investigated for different Cu to Al flux ratios from 1.0% to 4.0%. The formation of Cu-Al alloys on the surface was observed for all doping level. In contrast to Cu-doped GaN, all samples showed diamagnetic behavior determined by SQUID measurements.

Identification of stacking faults in silicon carbide by polarization-resolved second harmonic generation microscopy.

Science.gov (United States)

Hristu, Radu; Stanciu, Stefan G; Tranca, Denis E; Polychroniadis, Efstathios K; Stanciu, George A

2017-07-07

Although silicon carbide is a highly promising crystalline material for a wide range of electronic devices, extended and point defects which perturb the lattice periodicity hold deep implications with respect to device reliability. There is thus a great need for developing new methods that can detect silicon carbide defects which are detrimental to device functionality. Our experiment demonstrates that polarization-resolved second harmonic generation microscopy can extend the efficiency of the "optical signature" concept as an all-optical rapid and non-destructive set of investigation methods for the differentiation between hexagonal and cubic stacking faults in silicon carbide. This technique can be used for fast and in situ characterization and optimization of growth conditions for epilayers of silicon carbide and similar materials.

Effect of non-metallic precipitates and grain size on core loss of non-oriented electrical silicon steels

Science.gov (United States)

Wang, Jiayi; Ren, Qiang; Luo, Yan; Zhang, Lifeng

2018-04-01

In the current study, the number density and size of non-metallic precipitates and the size of grains on the core loss of the 50W800 non-oriented electrical silicon steel sheets were investigated. The number density and size of precipitates and grains were statistically analyzed using an automatic scanning electron microscope (ASPEX) and an optical microscope. Hypothesis models were established to reveal the physical feature for the function of grain size and precipitates on the core loss of the steel. Most precipitates in the steel were AlN particles smaller than 1 μm so that were detrimental to the core loss of the steel. These finer AlN particles distributed on the surface of the steel sheet. The relationship between the number density of precipitates (x in number/mm2 steel area) and the core loss (P1.5/50 in W/kg) was regressed as P1.5/50 = 4.150 + 0.002 x. The average grain size was approximately 25-35 μm. The relationship between the core loss and grain size (d in μm) was P1.5/50 = 3.851 + 20.001 d-1 + 60.000 d-2.

TNF-α decreases VEGF secretion in highly polarized RPE cells but increases it in non-polarized RPE cells related to crosstalk between JNK and NF-κB pathways.

Directory of Open Access Journals (Sweden)

Hiroto Terasaki

Full Text Available Asymmetrical secretion of vascular endothelial growth factor (VEGF by retinal pigment epithelial (RPE cells in situ is critical for maintaining the homeostasis of the retina and choroid. VEGF is also involved in the development and progression of age-related macular degeneration (AMD. We studied the effect of tumor necrosis factor-α (TNF-α on the secretion of VEGF in polarized and non-polarized RPE cells (P-RPE cells and N-RPE cells, respectively in culture and in situ in rats. A subretinal injection of TNF-α caused a decrease in VEGF expression and choroidal atrophy. Porcine RPE cells were seeded on Transwell™ filters, and their maturation and polarization were confirmed by the asymmetrical VEGF secretion and trans electrical resistance. Exposure to TNF-α decreased the VEGF secretion in P-RPE cells but increased it in N-RPE cells in culture. TNF-α inactivated JNK in P-RPE cells but activated it in N-RPE cells, and TNF-α activated NF-κB in P-RPE cells but not in N-RPE cells. Inhibition of NF-κB activated JNK in both types of RPE cells indicating crosstalk between JNK and NF-κB. TNF-α induced the inhibitory effects of NF-κB on JNK in P-RPE cells because NF-κB is continuously inactivated. In N-RPE cells, however, it was not evident because NF-κB was already activated. The basic activation pattern of JNK and NF-κB and their crosstalk led to opposing responses of RPE cells to TNF-α. These results suggest that VEGF secretion under inflammatory conditions depends on cellular polarization, and the TNF-α-induced VEGF down-regulation may result in choroidal atrophy in polarized physiological RPE cells. TNF-α-induced VEGF up-regulation may cause neovascularization by non-polarized or non-physiological RPE cells.

Study on TVD parameters sensitivity of a crankshaft using multiple scale and state space method considering quadratic and cubic non-linearities

Directory of Open Access Journals (Sweden)

R. Talebitooti

Full Text Available In this paper the effect of quadratic and cubic non-linearities of the system consisting of the crankshaft and torsional vibration damper (TVD is taken into account. TVD consists of non-linear elastomer material used for controlling the torsional vibration of crankshaft. The method of multiple scales is used to solve the governing equations of the system. Meanwhile, the frequency response of the system for both harmonic and sub-harmonic resonances is extracted. In addition, the effects of detuning parameters and other dimensionless parameters for a case of harmonic resonance are investigated. Moreover, the external forces including both inertia and gas forces are simultaneously applied into the model. Finally, in order to study the effectiveness of the parameters, the dimensionless governing equations of the system are solved, considering the state space method. Then, the effects of the torsional damper as well as all corresponding parameters of the system are discussed.

Local lattice environment of indium in GaN, AlN, and InN

International Nuclear Information System (INIS)

Penner, J.

2007-01-01

After an introduction to the physical properties of the nitrides, their preparation, and the state of studies on the implantation in the nitrides the experimental method (PAC) applied in this thesis and the data analysis are presented. The next chapter describes then the applied materials and the sample preparation. The following chapters contain the PAC measurements on the annealing behaviout of GaN, AlN, and InN after the implantation as well as dose- and temperature dependent PAC studies. Finally the most important results are summarized

Valence-band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x-ray photoemission spectroscopy

International Nuclear Information System (INIS)

Martin, G.; Botchkarev, A.; Rockett, A.; Morkoc, H.

1996-01-01

The valence-band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy. A significant forward endash backward asymmetry was observed in the InN/GaN endash GaN/InN and InN/AlN endash AlN/InN heterojunctions. The asymmetry was understood as a piezoelectric strain effect. We report the valence band discontinuities for InN/GaN=1.05±0.25 eV, GaN/AlN=0.70±0.24 eV, and InN/AlN=1.81±0.20 eV, all in the standard type I lineup. These values obey transitivity to within the experimental accuracy. Tables of photoemission core level binding energies are reported for wurtzite GaN, AlN, and InN. copyright 1996 American Institute of Physics

Shape Preserving Interpolation Using C2 Rational Cubic Spline

Directory of Open Access Journals (Sweden)

Samsul Ariffin Abdul Karim

2016-01-01

Full Text Available This paper discusses the construction of new C2 rational cubic spline interpolant with cubic numerator and quadratic denominator. The idea has been extended to shape preserving interpolation for positive data using the constructed rational cubic spline interpolation. The rational cubic spline has three parameters αi, βi, and γi. The sufficient conditions for the positivity are derived on one parameter γi while the other two parameters αi and βi are free parameters that can be used to change the final shape of the resulting interpolating curves. This will enable the user to produce many varieties of the positive interpolating curves. Cubic spline interpolation with C2 continuity is not able to preserve the shape of the positive data. Notably our scheme is easy to use and does not require knots insertion and C2 continuity can be achieved by solving tridiagonal systems of linear equations for the unknown first derivatives di, i=1,…,n-1. Comparisons with existing schemes also have been done in detail. From all presented numerical results the new C2 rational cubic spline gives very smooth interpolating curves compared to some established rational cubic schemes. An error analysis when the function to be interpolated is ft∈C3t0,tn is also investigated in detail.

On the structure of critical energy levels for the cubic focusing NLS on star graphs

International Nuclear Information System (INIS)

Adami, Riccardo; Noja, Diego; Cacciapuoti, Claudio; Finco, Domenico

2012-01-01

We provide information on a non-trivial structure of phase space of the cubic nonlinear Schrödinger (NLS) on a three-edge star graph. We prove that, in contrast to the case of the standard NLS on the line, the energy associated with the cubic focusing Schrödinger equation on the three-edge star graph with a free (Kirchhoff) vertex does not attain a minimum value on any sphere of constant L 2 -norm. We moreover show that the only stationary state with prescribed L 2 -norm is indeed a saddle point. (fast track communication)

Influence of ion/atom arrival ratio on structure and optical properties of AlN films by ion beam assisted deposition

Energy Technology Data Exchange (ETDEWEB)

Meng, Jian-ping [Department of Energy Material and Technology, General Research Institute for Nonferrous Metals, Beijing 100088 (China); School of Engineering and Technology, China University of Geosciences, Beijing 100083 (China); Fu, Zhi-qiang, E-mail: fuzq@cugb.edu.cn [School of Engineering and Technology, China University of Geosciences, Beijing 100083 (China); Liu, Xiao-peng [Department of Energy Material and Technology, General Research Institute for Nonferrous Metals, Beijing 100088 (China); Yue, Wen; Wang, Cheng-biao [School of Engineering and Technology, China University of Geosciences, Beijing 100083 (China)

2014-10-30

Highlights: • AlN films were fabricated by dual ion beam sputtering. • Chemical bond status and phase composition of the films were studied by XPS and XRD. • Optical constants were measured by spectroscopic ellipsometry. • Influence of ion/atom arrival ratio on the films was studied. - Abstract: In order to improve the optical properties of AlN films, the influence of the ion/atom arrival ratio on the structure and optical characteristics of AlN films deposited by dual ion beam sputtering was studied by using X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, spectroscopic ellipsometry and UV–vis spectroscopy. The films prepared at the ion/atom arrival ratio of 1.4 are amorphous while the crystalline quality is improved with the increase of the ion/atom arrival ratio. The films deposited at the ion/atom arrival ratio of no less than 1.8 have an approximately stoichiometric ratio and mainly consist of aluminum nitride with little aluminum oxynitride, while metallic aluminum component appears in the films deposited at the ion/atom arrival ratio of 1.4. When the ion/atom arrival ratio is not less than 1.8, films are smooth, high transmitting and dense. The films prepared with high ion/atom arrival ratio (≥1.8) display the characteristic of a dielectric. The films deposited at the ion/atom arrival ratio of 1.4 are coarse, opaque and show characteristic of cermet.

Origin and effective reduction of inversion domains in aluminum nitride grown by a sublimation method

Science.gov (United States)

Shigetoh, Keisuke; Horibuchi, Kayo; Nakamura, Daisuke

2017-11-01

Owing to the large differences in the chemical properties between Al and N polarities in aluminum nitride (AlN), the choice of the polar direction for crystal growth strongly affects not only the quality but also the shape (facet formation) of the grown crystal. In particular, N-polar (0 0 0 -1) has been considered to be a more preferable direction than Al-polar (0 0 0 1) for sublimation growth because compared to Al-polar (0 0 0 1), N-polar (0 0 0 -1) exhibits better stability at high growth rate (high supersaturation) conditions and enables easier lateral enlargement of the crystal. However, some critical growth conditions induce polarity inversion and hinder stable N-polar growth. Furthermore, the origin of the polarity inversion in AlN growth by the sublimation method is still unclear. To ensure stable N-polar growth without polarity inversion, the formation mechanism of the inversion domain during AlN sublimation growth must be elucidated. Therefore, herein, we demonstrate homoepitaxial growth on an N-polar seed and carefully investigate the obtained crystal that shows polarity inversion. Annular bright-field scanning transmission electron microscopy reveals that polarity is completely converted to the Al polarity via the formation of a 30 nm thick mixed polar layer (MPL) just above the seed. Moreover, three-dimensional atom probe tomography shows the segregation of the oxygen impurities in the MPL with a high concentration of about 3 atom%. Finally, by avoiding the incorporation of oxygen impurity into the crystal at the initial stage of the growth, we demonstrate an effective reduction (seven orders of magnitude) of the inversion domain boundary formation.

Neutrosophic Cubic MCGDM Method Based on Similarity Measure

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Surapati Pramanik

2017-06-01

Full Text Available The notion of neutrosophic cubic set is originated from the hybridization of the concept of neutrosophic set and interval valued neutrosophic set. We define similarity measure for neutrosophic cubic sets and prove some of its basic properties.

Cubical version of combinatorial differential forms

DEFF Research Database (Denmark)

Kock, Anders

2010-01-01

The theory of combinatorial differential forms is usually presented in simplicial terms. We present here a cubical version; it depends on the possibility of forming affine combinations of mutual neighbour points in a manifold, in the context of synthetic differential geometry.......The theory of combinatorial differential forms is usually presented in simplicial terms. We present here a cubical version; it depends on the possibility of forming affine combinations of mutual neighbour points in a manifold, in the context of synthetic differential geometry....

Solar-blind AlxGa1-xN/AlN/SiC photodiodes with a polarization-induced electron filter

Science.gov (United States)

Rodak, L. E.; Sampath, A. V.; Gallinat, C. S.; Chen, Y.; Zhou, Q.; Campbell, J. C.; Shen, H.; Wraback, M.

2013-08-01

Heterogeneous n-III-nitride/i-p silicon carbide (SiC) photodetectors have been demonstrated that enable the tailoring of the spectral response in the solar blind region below 280 nm. The negative polarization induced charge at the aluminum gallium nitride (AlxGa1-xN)/aluminum nitride (AlN) interface in conjunction with the positive polarization charge at the AlN/SiC interface creates a large barrier to carrier transport across the interface that results in the selective collection of electrons photoexcited to the Γ and L valleys of SiC while blocking the transport of electrons generated in the M valley. In addition, the AlxGa1-xN alloys act as transparent windows that enhance the collection of carriers generated by high energy photons in the fully depleted SiC absorption regions. These two factors combine to create a peak external quantum efficiency of 76% at 242 nm, along with a strong suppression of the long-wavelength response from 260 nm to 380 nm.

Non-Polar Natural Products from Bromelia laciniosa, Neoglaziovia variegata and Encholirium spectabile (Bromeliaceae

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Ole Johan Juvik

2017-09-01

Full Text Available Extensive regional droughts are already a major problem on all inhabited continents and severe regional droughts are expected to become an increasing and extended problem in the future. Consequently, extended use of available drought resistant food plants should be encouraged. Bromelia laciniosa, Neoglaziovia variegata and Encholirium spectabile are excellent candidates in that respect because they are established drought resistant edible plants from the semi-arid Caatinga region. From a food safety perspective, increased utilization of these plants would necessitate detailed knowledge about their chemical constituents. However, their chemical compositions have previously not been determined. For the first time, the non-polar constituents of B. laciniosa, N. variegata and E. spectabile have been identified. This is the first thorough report on natural products from N. variegata, E. spectabile, and B. laciniosa. Altogether, 20 non-polar natural products were characterized. The identifications were based on hyphenated gas chromatography-high resolution mass spectrometry (GC-HRMS and supported by 1D and 2D Nuclear Magnetic Resonance (NMR plant metabolomics.

P-union and P-intersection of neutrosophic cubic sets

OpenAIRE

Florentin Smarandache; Chang Su Kim

2015-01-01

Conditions for the P-intersection and P-intersection of falsity-external (resp. indeterminacy-external and truth-external) neutrosophic cubic sets to be an falsity-external (resp. indeterminacy-external and truth- external) neutrosophic cubic set are provided. Conditions for the P-union and the P-intersection of two truth-external (resp. indeterminacy-external and falsity-external) neutrosophic cubic sets to be a truth-internal (resp. indeterminacy-internal and falsity-internal) neutrosoph...

Circular polarization in a non-magnetic resonant tunneling device

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Airey Robert

2011-01-01

Full Text Available Abstract We have investigated the polarization-resolved photoluminescence (PL in an asymmetric n-type GaAs/AlAs/GaAlAs resonant tunneling diode under magnetic field parallel to the tunnel current. The quantum well (QW PL presents strong circular polarization (values up to -70% at 19 T. The optical emission from GaAs contact layers shows evidence of highly spin-polarized two-dimensional electron and hole gases which affects the spin polarization of carriers in the QW. However, the circular polarization degree in the QW also depends on various other parameters, including the g-factors of the different layers, the density of carriers along the structure, and the Zeeman and Rashba effects.

Polarized secondary radioactive beams

International Nuclear Information System (INIS)

Zaika, N.I.

1992-01-01

Three methods of polarized radioactive nuclei beam production: a) a method nuclear interaction of the non-polarized or polarized charged projectiles with target nuclei; b) a method of polarization of stopped reaction radioactive products in a special polarized ion source with than following acceleration; c) a polarization of radioactive nuclei circulating in a storage ring are considered. Possible life times of the radioactive ions for these methods are determined. General schemes of the polarization method realizations and depolarization problems are discussed

Dispersion properties and low infrared optical losses in epitaxial AlN on sapphire substrate in the visible and infrared range

Czech Academy of Sciences Publication Activity Database

Soltani, A.; Stolz, A.; Charrier, J.; Mattalah, M.; Gerbedoen, J.-C.; Barkad, H.A.; Mortet, Vincent; Rousseau, M.; Bourzgui, N.; BenMoussa, A.; De Jaeger, J.-C.

2014-01-01

Roč. 115, č. 16 (2014), "163515-1"-"163515-6" ISSN 0021-8979 Institutional support: RVO:68378271 Keywords : III-V semiconductors * AlN films * surface scattering * refractive index * optical properties Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.183, year: 2014

Exciplex fluorescence emission from simple organic intramolecular constructs in non-polar and highly polar media as model systems for DNA-assembled exciplex detectors.

Science.gov (United States)

Bichenkova, Elena V; Sardarian, Ali R; Wilton, Amanda N; Bonnet, Pascal; Bryce, Richard A; Douglas, Kenneth T

2006-01-21

Organic intramolecular exciplexes, N-(4-dimethylaminobenzyl)-N-(1-pyrenemethyl)amine (1) and N'-4-dimethylaminonaphthyl-N-(1-pyrenemethyl)amine (2), were used as model systems to reveal major factors affecting their exciplex fluorescence, and thus lay the basis for developing emissive target-assembled exciplexes for DNA-mounted systems in solution. These models with an aromatic pyrenyl hydrocarbon moiety as an electron acceptor appropriately connected to an aromatic dimethylamino electron donor component (N,N-dimethylaminophenyl or N,N-dimethylaminonaphthyl) showed strong intramolecular exciplex emission in both non-polar and highly polar solvents. The effect of dielectric constant on the maximum wavelength for exciplex emission was studied, and emission was observed for 1 and 2 over the full range of solvent from non-polar hydrocarbons up to N-methylformamide with a dielectric constant of 182. Quantum yields were determined for these intramolecular exciplexes in a range of solvents relative to that for Hoechst 33,258. Conformational analysis of 1 was performed both computationally and via qualitative 2D NMR using (1)H-NOESY experiments. The results obtained indicated the contribution of pre-folded conformation(s) to the ground state of 1 conducive to exciplex emission. This research provides the initial background for design of self-assembled, DNA-mounted exciplexes and underpins further development of exciplex-based hybridisation bioassays.

Non-Gaussian covariance of CMB B modes of polarization and parameter degradation

International Nuclear Information System (INIS)

Li Chao; Smith, Tristan L.; Cooray, Asantha

2007-01-01

The B-mode polarization lensing signal is a useful probe of the neutrino mass and to a lesser extent the dark energy equation of state as the signal depends on the integrated mass power spectrum between us and the last scattering surface. This lensing B-mode signal, however, is non-Gaussian and the resulting non-Gaussian covariance to the power spectrum could impact cosmological parameter measurements, as correlations between B-mode bins are at a level of 0.1. On the other hand, for temperature and E-mode polarization power spectra, the non-Gaussian covariance is not significant, where we find correlations at the 10 -5 level even for adjacent bins. When the power spectrum is estimated with roughly 5 uniformly spaced bins from l=5 to l=100 and 13 logarithmic uniformly spaced bins from l=100 to l=2000, the resulting degradation on neutrino mass and dark energy equation of state is about a factor of 2 to 3 when compared to the case where statistics are simply considered to be Gaussian. If we increase the total number of bins between l=5 and l=2000 to be about 100, we find that the non-Gaussianities only make a minor difference with less than a few percent correction to uncertainties of most cosmological parameters determined from the data. For Planck, the resulting constraints on the sum of the neutrino masses is σ Σm ν ∼0.2 eV and on the dark energy equation of state parameter we find that σ w ∼0.5. A post-Planck experiment can improve the neutrino mass measurement by a factor of 3 to 4

Simulation of Venus polar vortices with the non-hydrostatic general circulation model

Science.gov (United States)

Rodin, Alexander V.; Mingalev, Oleg; Orlov, Konstantin

2012-07-01

The dynamics of Venus atmosphere in the polar regions presents a challenge for general circulation models. Numerous images and hyperspectral data from Venus Express mission shows that above 60 degrees latitude atmospheric motion is substantially different from that of the tropical and extratropical atmosphere. In particular, extended polar hoods composed presumably of fine haze particles, as well as polar vortices revealing mesoscale wave perturbations with variable zonal wavenumbers, imply the significance of vertical motion in these circulation elements. On these scales, however, hydrostatic balance commonly used in the general circulation models is no longer valid, and vertical forces have to be taken into account to obtain correct wind field. We present the first non-hydrostatic general circulation model of the Venus atmosphere based on the full set of gas dynamics equations. The model uses uniform grid with the resolution of 1.2 degrees in horizontal and 200 m in the vertical direction. Thermal forcing is simulated by means of relaxation approximation with specified thermal profile and time scale. The model takes advantage of hybrid calculations on graphical processors using CUDA technology in order to increase performance. Simulations show that vorticity is concentrated at high latitudes within planetary scale, off-axis vortices, precessing with a period of 30 to 40 days. The scale and position of these vortices coincides with polar hoods observed in the UV images. The regions characterized with high vorticity are surrounded by series of small vortices which may be caused by shear instability of the zonal flow. Vertical velocity component implies that in the central part of high vorticity areas atmospheric flow is downwelling and perturbed by mesoscale waves with zonal wavenumbers 1-4, resembling observed wave structures in the polar vortices. Simulations also show the existence of areas with strong vertical flow, concentrated in spiral branches extending

Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer.

Science.gov (United States)

Qian, Qingkai; Li, Baikui; Hua, Mengyuan; Zhang, Zhaofu; Lan, Feifei; Xu, Yongkuan; Yan, Ruyue; Chen, Kevin J

2016-06-09

Transistors based on MoS2 and other TMDs have been widely studied. The dangling-bond free surface of MoS2 has made the deposition of high-quality high-k dielectrics on MoS2 a challenge. The resulted transistors often suffer from the threshold voltage instability induced by the high density traps near MoS2/dielectric interface or inside the gate dielectric, which is detrimental for the practical applications of MoS2 metal-oxide-semiconductor field-effect transistor (MOSFET). In this work, by using AlN deposited by plasma enhanced atomic layer deposition (PEALD) as an interfacial layer, top-gate dielectrics as thin as 6 nm for single-layer MoS2 transistors are demonstrated. The AlN interfacial layer not only promotes the conformal deposition of high-quality Al2O3 on the dangling-bond free MoS2, but also greatly enhances the electrical stability of the MoS2 transistors. Very small hysteresis (ΔVth) is observed even at large gate biases and high temperatures. The transistor also exhibits a low level of flicker noise, which clearly originates from the Hooge mobility fluctuation instead of the carrier number fluctuation. The observed superior electrical stability of MoS2 transistor is attributed to the low border trap density of the AlN interfacial layer, as well as the small gate leakage and high dielectric strength of AlN/Al2O3 dielectric stack.

The influence of ALN-Al gradient material gradient index on ballistic performance

International Nuclear Information System (INIS)

Wang Youcong; Liu Qiwen; Li Yao; Shen Qiang

2013-01-01

Ballistic performance of the gradient material is superior to laminated material, and gradient materials have different gradient types. Using ls-dyna to simulate the ballistic performance of ALN-AL gradient target plates which contain three gradient index (b = 1, b = 0.5, b = 2). Through Hopkinson bar numerical simulation to the target plate materials, we obtained the reflection stress wave and transmission stress wave state of gradient material to get the best gradient index. The internal stress state of gradient material is simulated by amplification processing of the target plate model. When the gradient index b is equal to 1, the gradient target plate is best of all.

The Variations of Thermal Contact Resistance and Heat Transfer Rate of the AlN Film Compositing with PCM

Directory of Open Access Journals (Sweden)

Huann-Ming Chou

2015-01-01

Full Text Available The electrical industries have been fast developing over the past decades. Moreover, the trend of microelements and packed division multiplex is obviously for the electrical industry. Hence, the high heat dissipative and the electrical insulating device have been popular and necessary. The thermal conduct coefficient of aluminum nitride (i.e., AlN is many times larger than the other materials. Moreover, the green technology of composite with phase change materials (i.e., PCMs is worked as a constant temperature cooler. Therefore, PCMs have been used frequently for saving energy and the green environment. Based on the above statements, it does show great potential in heat dissipative for the AlN film compositing with PCM. Therefore, this paper is focused on the research of thermal contact resistance and heat transfer between the AlN/PCM pairs. According to the experimental results, the heat transfer decreases and the thermal contact resistance increases under the melting process of PCM. However, the suitable parameters such as contact pressures can be used to improve the above defects.

AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition.

Science.gov (United States)

Tzou, An-Jye; Chu, Kuo-Hsiung; Lin, I-Feng; Østreng, Erik; Fang, Yung-Sheng; Wu, Xiao-Peng; Wu, Bo-Wei; Shen, Chang-Hong; Shieh, Jia-Ming; Yeh, Wen-Kuan; Chang, Chun-Yen; Kuo, Hao-Chung

2017-12-01

We report a low current collapse GaN-based high electron mobility transistor (HEMT) with an excellent thermal stability at 150 °C. The AlN was grown by N 2 -based plasma enhanced atomic layer deposition (PEALD) and shown a refractive index of 1.94 at 633 nm of wavelength. Prior to deposit AlN on III-nitrides, the H 2 /NH 3 plasma pre-treatment led to remove the native gallium oxide. The X-ray photoelectron spectroscopy (XPS) spectroscopy confirmed that the native oxide can be effectively decomposed by hydrogen plasma. Following the in situ ALD-AlN passivation, the surface traps can be eliminated and corresponding to a 22.1% of current collapse with quiescent drain bias (V DSQ ) at 40 V. Furthermore, the high temperature measurement exhibited a shift-free threshold voltage (V th ), corresponding to a 40.2% of current collapse at 150 °C. The thermal stable HEMT enabled a breakdown voltage (BV) to 687 V at high temperature, promising a good thermal reliability under high power operation.

AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition

Science.gov (United States)

Tzou, An-Jye; Chu, Kuo-Hsiung; Lin, I.-Feng; Østreng, Erik; Fang, Yung-Sheng; Wu, Xiao-Peng; Wu, Bo-Wei; Shen, Chang-Hong; Shieh, Jia-Ming; Yeh, Wen-Kuan; Chang, Chun-Yen; Kuo, Hao-Chung

2017-04-01

We report a low current collapse GaN-based high electron mobility transistor (HEMT) with an excellent thermal stability at 150 °C. The AlN was grown by N2-based plasma enhanced atomic layer deposition (PEALD) and shown a refractive index of 1.94 at 633 nm of wavelength. Prior to deposit AlN on III-nitrides, the H2/NH3 plasma pre-treatment led to remove the native gallium oxide. The X-ray photoelectron spectroscopy (XPS) spectroscopy confirmed that the native oxide can be effectively decomposed by hydrogen plasma. Following the in situ ALD-AlN passivation, the surface traps can be eliminated and corresponding to a 22.1% of current collapse with quiescent drain bias ( V DSQ) at 40 V. Furthermore, the high temperature measurement exhibited a shift-free threshold voltage ( V th), corresponding to a 40.2% of current collapse at 150 °C. The thermal stable HEMT enabled a breakdown voltage (BV) to 687 V at high temperature, promising a good thermal reliability under high power operation.

Processing simulated high-level liquid waste by heat treatment with addition of TiN and AlN or Al2O3

International Nuclear Information System (INIS)

Uno, Masayoshi; Kinoshita, Hajime; Sakai, Etsuro; Ikeda, Akira; Matsumoto, Y.; Yamanaka, Shinsuke

1999-01-01

The present study aims to decrease the melting temperature of the oxide phase by the addition of the mixture of TiN and AlN or Al 2 O 3 for reduction of the treatment temperature of super high temperature method. The addition of the mixture of TiN and AlN or Al 2 O 3 with the atomic ratio of Al to Ti of 1:9 caused the melting of both the alloy phase and oxide phase at 1673 K. The measured values of density and hardness for thus obtained oxide phase were same as those for the oxide phase obtained at 1873 K without Al. Thus, above mentioned method is achieved at 1673 K without degradation of the properties of the oxide phase as an waste. (author)

Direct Detection of the Ion Pair to Free Ions Transformation upon Complexation with an Ion Receptor in Non-Polar Solvents by using Conductometry.

Science.gov (United States)

Iseda, Kazuya; Kokado, Kenta; Sada, Kazuki

2018-03-01

In this study, we performed conductometry in various organic solvents to directly detect the transformation from tetrabutylammonium chloride ( TBACl ) ion-pair salt to the free ions through complexation with meso -octamethylcalix[4]pyrrole ( CP ), which is a well-known receptor for chloride anions. In the presence of CP , the conductivity of TBACl increases in various non-polar solvents, indicating that complexation with CP enhances the ionic dissociation of TBACl in such non-polar solvents. In other words, CP recognizes chloride as an ion-paired salt as well as a free anion in non-polar solvents. Additionally, the TBA(CP - Cl ) complex exhibited a considerably lower ion-pairing constant ( K ip ) than TBACl in non-polar solvents, resulting in enhanced conductivity. Based on these findings, we can conclude that complexation of an anion with a hydrophobic anion receptor will be useful for creating functional and stimuli-responsive soft materials in organic solvents using coulombic forces.

Bifurcation of limit cycles for cubic reversible systems

Directory of Open Access Journals (Sweden)

Yi Shao

2014-04-01

Full Text Available This article is concerned with the bifurcation of limit cycles of a class of cubic reversible system having a center at the origin. We prove that this system has at least four limit cycles produced by the period annulus around the center under cubic perturbations

Observations of Rabi oscillations in a non-polar InGaN quantum dot

Energy Technology Data Exchange (ETDEWEB)

Reid, Benjamin P. L., E-mail: benjamin.reid@physics.ox.ac.uk; Chan, Christopher C. S.; Taylor, Robert A. [Department of Physics, University of Oxford, Parks Road, Oxford OX1 3PU (United Kingdom); Kocher, Claudius [Department of Physics, University of Oxford, Parks Road, Oxford OX1 3PU (United Kingdom); Konstanz University, Konstanz (Germany); Zhu, Tongtong; Oehler, Fabrice; Emery, Robert; Oliver, Rachel A. [Department of Materials Science and Metallurgy, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)

2014-06-30

Experimental observation of Rabi rotations between an exciton excited state and the crystal ground state in a single non-polar InGaN quantum dot is presented. The exciton excited state energy is determined by photoluminescence excitation spectroscopy using two-photon excitation from a pulsed laser. The population of the exciton excited state is seen to undergo power dependent damped Rabi oscillations.

Observations of Rabi oscillations in a non-polar InGaN quantum dot

International Nuclear Information System (INIS)

Reid, Benjamin P. L.; Chan, Christopher C. S.; Taylor, Robert A.; Kocher, Claudius; Zhu, Tongtong; Oehler, Fabrice; Emery, Robert; Oliver, Rachel A.

2014-01-01

Experimental observation of Rabi rotations between an exciton excited state and the crystal ground state in a single non-polar InGaN quantum dot is presented. The exciton excited state energy is determined by photoluminescence excitation spectroscopy using two-photon excitation from a pulsed laser. The population of the exciton excited state is seen to undergo power dependent damped Rabi oscillations.

Plasmon polaritons in cubic lattices of spherical metallic nanoparticles

Science.gov (United States)

Lamowski, Simon; Mann, Charlie-Ray; Hellbach, Felicitas; Mariani, Eros; Weick, Guillaume; Pauly, Fabian

2018-03-01

We theoretically investigate plasmon polaritons in cubic lattices of spherical metallic nanoparticles. The nanoparticles, each supporting triply-degenerate localized surface plasmons, couple through the Coulomb dipole-dipole interaction, giving rise to collective plasmons that extend over the whole metamaterial. The latter hybridize with photons forming plasmon polaritons, which are the hybrid light-matter eigenmodes of the system. We derive general analytical expressions to evaluate both plasmon and plasmon-polariton dispersions and the corresponding eigenstates. These are obtained within a Hamiltonian formalism, which takes into account retardation effects in the dipolar interaction between the nanoparticles and considers the dielectric properties of the nanoparticles as well as their surrounding. Within this model we predict polaritonic splittings in the near-infrared to the visible range of the electromagnetic spectrum that depend on polarization, lattice symmetry, and wave-vector direction. Finally, we show that the predictions of our model are in excellent quantitative agreement with conventional finite-difference frequency-domain simulations, but with the advantages of analytical insight and significantly reduced computational cost.

Structural and electronic properties of zinc blende B{sub x}Al{sub 1-x}N{sub y}P{sub 1-y} quaternary alloys via first-principle calculations

Energy Technology Data Exchange (ETDEWEB)

Abdiche, A., E-mail: abdiche_a@yahoo.fr [Engineering Physics Laboratory, Tiaret University, 14000 Tiaret (Algeria); Baghdad, R. [Engineering Physics Laboratory, Tiaret University, 14000 Tiaret (Algeria); Khenata, R., E-mail: khenata_rabah@yahoo.fr [Laboratoire de Physique Quantique et de Modelisation Mathematique (LPQ3M), Departement de Technologie, Universite de Mascara, 29000 Mascara (Algeria); Department of Physics and Astronomy, King Saud University, P.O Box 2455, Riyadh 11451 (Saudi Arabia); Riane, R. [Computational Materials Science Laboratory, University Research of Sidi-Bel-Abbes, 22000 Algeria (Algeria); Al-Douri, Y. [Institute of Nono Electronic Engineering, University Malaysia Perlis, 01000 Kangar, Perlis (Malaysia); Guemou, M. [Engineering Physics Laboratory, Tiaret University, 14000 Tiaret (Algeria); Bin-Omran, S. [Department of Physics and Astronomy, King Saud University, P.O Box 2455, Riyadh 11451 (Saudi Arabia)

2012-02-01

The structural and electronic properties of cubic zinc blende BN, BP, AlN and AlP compounds and their B{sub x}Al{sub 1-x}N{sub y}P{sub 1-y} quaternary alloys, have been calculated using the non relativistic full-potential linearized-augmented plane wave FP-LAPW method. The exchange-correlation potential is treated with the local density approximation of Perdew and Wang (LDA-PW) as well as the generalized gradient approximation (GGA) of Perdew-Burke and Ernzerhof (GGA-PBE). The calculated structural properties of BN, BP, AlN and AlP compounds are in good agreement with the available experimental and theoretical data. A nonlinear variation of compositions x and y with the lattice constants, bulk modulus, direct and indirect band gaps is found. The calculated bowing of the fundamental band gaps is in good agreement with the available experimental and theoretical value. To our knowledge this is the first quantitative theoretical investigation on B{sub x}Al{sub 1-x}N{sub y}P{sub 1-y} quaternary alloy and still awaits experimental confirmations.

Oblique non-neutral solitary Alfven modes in weakly nonlinear pair plasmas

International Nuclear Information System (INIS)

Verheest, Frank; Lakhina, G S

2005-01-01

The equal charge-to-mass ratio for both species in pair plasmas induces a decoupling of the linear eigenmodes between waves that are charge neutral or non-neutral, also at oblique propagation with respect to a static magnetic field. While the charge-neutral linear modes have been studied in greater detail, including their weakly and strongly nonlinear counterparts, the non-neutral mode has received less attention. Here the nonlinear evolution of a solitary non-neutral mode at oblique propagation is investigated in an electron-positron plasma. Employing the framework of reductive perturbation analysis, a modified Korteweg-de Vries equation (with cubic nonlinearity) for the lowest-order wave magnetic field is obtained. In the linear approximation, the non-neutral mode has its magnetic component orthogonal to the plane spanned by the directions of wave propagation and of the static magnetic field. The linear polarization is not maintained at higher orders. The results may be relevant to the microstructure in pulsar radiation or to the subpulses

Galilean-invariant preconditioned central-moment lattice Boltzmann method without cubic velocity errors for efficient steady flow simulations

Science.gov (United States)

Hajabdollahi, Farzaneh; Premnath, Kannan N.

2018-05-01

Lattice Boltzmann (LB) models used for the computation of fluid flows represented by the Navier-Stokes (NS) equations on standard lattices can lead to non-Galilean-invariant (GI) viscous stress involving cubic velocity errors. This arises from the dependence of their third-order diagonal moments on the first-order moments for standard lattices, and strategies have recently been introduced to restore Galilean invariance without such errors using a modified collision operator involving corrections to either the relaxation times or the moment equilibria. Convergence acceleration in the simulation of steady flows can be achieved by solving the preconditioned NS equations, which contain a preconditioning parameter that can be used to tune the effective sound speed, and thereby alleviating the numerical stiffness. In the present paper, we present a GI formulation of the preconditioned cascaded central-moment LB method used to solve the preconditioned NS equations, which is free of cubic velocity errors on a standard lattice, for steady flows. A Chapman-Enskog analysis reveals the structure of the spurious non-GI defect terms and it is demonstrated that the anisotropy of the resulting viscous stress is dependent on the preconditioning parameter, in addition to the fluid velocity. It is shown that partial correction to eliminate the cubic velocity defects is achieved by scaling the cubic velocity terms in the off-diagonal third-order moment equilibria with the square of the preconditioning parameter. Furthermore, we develop additional corrections based on the extended moment equilibria involving gradient terms with coefficients dependent locally on the fluid velocity and the preconditioning parameter. Such parameter dependent corrections eliminate the remaining truncation errors arising from the degeneracy of the diagonal third-order moments and fully restore Galilean invariance without cubic defects for the preconditioned LB scheme on a standard lattice. Several

Cubic interactions of Maxwell-like higher spins

Energy Technology Data Exchange (ETDEWEB)

Francia, Dario [Scuola Normale Superiore and INFN,Piazza dei Cavalieri, 7 I-56126 Pisa (Italy); Monaco, Gabriele Lo [Dipartimento di Fisica, Università di Pisa,Piazza Fibonacci, 3, I-56126, Pisa (Italy); Dipartimento di Fisica, Università di Milano-Bicocca,Piazza della Scienza 3, I-20126 Milano (Italy); Mkrtchyan, Karapet [Max Planck Institut für Gravitationsphysik,Am Mühlenberg 1, Potsdam 14476 (Germany)

2017-04-12

We study the cubic vertices for Maxwell-like higher-spins in flat and (A)dS background spaces of any dimension. Reducibility of their free spectra implies that a single cubic vertex involving any three fields subsumes a number of couplings among different particles of various spins. The resulting vertices do not involve traces of the fields and in this sense are simpler than their Fronsdal counterparts. We propose an extension of both the free theory and of its cubic deformation to a more general class of partially reducible systems, that one can obtain from the original theory upon imposing trace constraints of various orders. The key to our results is a version of the Noether procedure allowing to systematically account for the deformations of the transversality conditions to be imposed on the gauge parameters at the free level.

An Abel type cubic system

Directory of Open Access Journals (Sweden)

Gary R. Nicklason

2015-07-01

Full Text Available We consider center conditions for plane polynomial systems of Abel type consisting of a linear center perturbed by the sum of 2 homogeneous polynomials of degrees n and 2n-1 where $n \\ge 2$. Using properties of Abel equations we obtain two general systems valid for arbitrary values on n. For the cubic n=2 systems we find several sets of new center conditions, some of which show that the results in a paper by Hill, Lloyd and Pearson which were conjectured to be complete are in fact not complete. We also present a particular system which appears to be a counterexample to a conjecture by Zoladek et al. regarding rational reversibility in cubic polynomial systems.

Cubication of conservative nonlinear oscillators

International Nuclear Information System (INIS)

Belendez, Augusto; Alvarez, Mariela L; Fernandez, Elena; Pascual, Inmaculada

2009-01-01

A cubication procedure of the nonlinear differential equation for conservative nonlinear oscillators is analysed and discussed. This scheme is based on the Chebyshev series expansion of the restoring force, and this allows us to approximate the original nonlinear differential equation by a Duffing equation in which the coefficients for the linear and cubic terms depend on the initial amplitude, A, while in a Taylor expansion of the restoring force these coefficients are independent of A. The replacement of the original nonlinear equation by an approximate Duffing equation allows us to obtain an approximate frequency-amplitude relation as a function of the complete elliptic integral of the first kind. Some conservative nonlinear oscillators are analysed to illustrate the usefulness and effectiveness of this scheme.

Is the polarization of NGC1068 evidence for a non-thermal source

International Nuclear Information System (INIS)

McLean, I.S.; Aspin, C.; Heathcote, S.R.; McCaughrean, M.J.

1983-01-01

NGC1068 is one of the brightest galaxies included by Seyfert in his list of extragalactic objects having compact, luminous nuclei within which broad, high-excitation emission lines occur. It has been the subject of intensive studies at UV, optical, IR and radio wavelengths. Unresolved questions concern the nature and relationship of the sources of the excess flux seen in the UV and IR, their connection with the collimated jets apparent in high-resolution radio maps and their association with the extended region responsible for the broad emission lines. A further question is the location of any dust and its role in modifying the optical and UV spectrum. Observations are reported with two high-resolution optical spectro-polarimeters which throw new light on these questions. From detailed structure found in the linear polarization spectrum of the nucleus it is concluded that dilution by starlight modifies the polarization to an extent not previously appreciated. In fact the polarization of the non-stellar flux in the optical and near IR is approximately independent of wavelength (as expected for synchrotron emission or electron scattering) with a direction orthogonal to that of the radio jets; such an arrangement is reminiscent of certain quasars and radio galaxies. (author)

Transdermal delivery of paeonol using cubic gel and microemulsion gel

Science.gov (United States)

Luo, Maofu; Shen, Qi; Chen, Jinjin

2011-01-01

Background The aim of this study was to develop new systems for transdermal delivery of paeonol, in particular microemulsion gel and cubic gel formulations. Methods Various microemulsion vehicles were prepared using isopropyl myristate as an oil phase, polyoxyethylated castor oil (Cremophor® EL) as a surfactant, and polyethylene glycol 400 as a cosurfactant. In the optimum microemulsion gel formulation, carbomer 940 was selected as the gel matrix, and consisted of 1% paeonol, 4% isopropyl myristate, 28% Cremophor EL/polyethylene glycol 400 (1:1), and 67% water. The cubic gel was prepared containing 3% paeonol, 30% water, and 67% glyceryl monooleate. Results A skin permeability test using excised rat skins indicated that both the cubic gel and microemulsion gel formulations had higher permeability than did the paeonol solution. An in vivo pharmacokinetic study done in rats showed that the relative bioavailability of the cubic gel and microemulsion gel was enhanced by about 1.51-fold and 1.28-fold, respectively, compared with orally administered paeonol suspension. Conclusion Both the cubic gel and microemulsion gel formulations are promising delivery systems to enhance the skin permeability of paeonol, in particular the cubic gel. PMID:21904450

Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Fernandez-Garrido, S.; Pereiro, J.; Munoz, E.; Calleja, E.; Redondo-Cubero, A.; Gago, R.; Bertram, F.; Christen, J.; Luna, E.; Trampert, A.

2008-01-01

Indium incorporation into wurtzite (0001)-oriented In x Al y Ga 1-x-y N layers grown by plasma-assisted molecular beam epitaxy was studied as a function of the growth temperature (565-635 deg. C) and the AlN mole fraction (0.01< y<0.27). The layer stoichiometry was determined by Rutherford backscattering spectrometry (RBS). RBS shows that indium incorporation decreased continuously with increasing growth temperature due to thermally enhanced dissociation of In-N bonds and for increasing AlN mole fractions. High resolution x-ray diffraction and transmission electron microscopy (TEM) measurements did not show evidence of phase separation. The mosaicity of the quaternary layers was found to be mainly determined by the growth temperature and independent on alloy composition within the range studied. However, depending on the AlN mole fraction, nanometer-sized composition fluctuations were detected by TEM. Photoluminescence spectra showed a single broad emission at room temperature, with energy and bandwidth S- and W-shaped temperature dependences typical of exciton localization by alloy inhomogeneities. Cathodoluminescence measurements demonstrated that the alloy inhomogeneities, responsible of exciton localization, occur on a lateral length scale below 150 nm, which is corroborated by TEM

Bistable states of TM polarized non-linear waves guided by symmetric layered structures

International Nuclear Information System (INIS)

Mihalache, D.

1985-04-01

Dispersion relations for TM polarized non-linear waves propagating in a symmetric single film optical waveguide are derived. The system consists of a layer of thickness d with dielectric constant epsilon 1 bounded at two sides by a non-linear medium characterized by the diagonal dielectric tensor epsilon 11 =epsilon 22 =epsilon 0 , epsilon 33 =epsilon 0 +α|E 3 | 2 , where E 3 is the normal electric field component. For sufficiently large d/lambda (lambda is the wavelength) we predict bistable states of both symmetric and antisymmetric modes provided that the power flow is the control parameter. (author)

Nonlinear dynamics of quadratically cubic systems

International Nuclear Information System (INIS)

Rudenko, O V

2013-01-01

We propose a modified form of the well-known nonlinear dynamic equations with quadratic relations used to model a cubic nonlinearity. We show that such quadratically cubic equations sometimes allow exact solutions and sometimes make the original problem easier to analyze qualitatively. Occasionally, exact solutions provide a useful tool for studying new phenomena. Examples considered include nonlinear ordinary differential equations and Hopf, Burgers, Korteweg–de Vries, and nonlinear Schrödinger partial differential equations. Some problems are solved exactly in the space–time and spectral representations. Unsolved problems potentially solvable by the proposed approach are listed. (methodological notes)

Plasmonic non-concentric nanorings array as an unidirectional nano-optical conveyor belt actuated by polarization rotation.

Science.gov (United States)

Jiang, Min; Wang, Guanghui; Jiao, Wenxiang; Ying, Zhoufeng; Zou, Ningmu; Ho, Ho-Pui; Sun, Tianyu; Zhang, Xuping

2017-01-15

We report a nano-optical conveyor belt containing an array of gold plasmonic non-concentric nanorings (PNNRs) for the realization of trapping and unidirectional transportation of nanoparticles through rotating the polarization of an excitation beam. The location of hot spots within an asymmetric plasmonic nanostructure is polarization dependent, thus making it possible to manipulate a trapped target by rotating the incident polarization state. In the case of PNNR, the two poles have highly unbalanced trap potential. This greatly enhances the chance of transferring trapped particles between adjacent PNNRs in a given direction through rotating the polarization. As confirmed by three-dimensional finite-difference time-domain analysis, an array of PNNRs forms an unidirectional nano-optical conveyor belt, which delivers target nanoparticles or biomolecules over a long distance with nanometer accuracy. With the capacity to trap and to transfer, our design offers a versatile scheme for conducting mechanical sample manipulation in many on-chip optofluidic applications.

Drude weight and optical conductivity of a two-dimensional heavy-hole gas with k-cubic spin-orbit interactions

Energy Technology Data Exchange (ETDEWEB)

Mawrie, Alestin; Ghosh, Tarun Kanti [Department of Physics, Indian Institute of Technology-Kanpur, Kanpur 208 016 (India)

2016-01-28

We present a detailed theoretical study on zero-frequency Drude weight and optical conductivity of a two-dimensional heavy-hole gas (2DHG) with k-cubic Rashba and Dresselhaus spin-orbit interactions. The presence of k-cubic spin-orbit couplings strongly modifies the Drude weight in comparison to the electron gas with k-linear spin-orbit couplings. For large hole density and strong k-cubic spin-orbit couplings, the density dependence of Drude weight deviates from the linear behavior. We establish a relation between optical conductivity and the Berry connection. Unlike two-dimensional electron gas with k-linear spin-orbit couplings, we explicitly show that the optical conductivity does not vanish even for equal strength of the two spin-orbit couplings. We attribute this fact to the non-zero Berry phase for equal strength of k-cubic spin-orbit couplings. The least photon energy needed to set in the optical transition in hole gas is one order of magnitude smaller than that of electron gas. Types of two van Hove singularities appear in the optical spectrum are also discussed.

Light extraction enhancement of 265 nm deep-ultraviolet light-emitting diodes with over 90 mW output power via an AlN hybrid nanostructure

Energy Technology Data Exchange (ETDEWEB)

Inoue, Shin-ichiro, E-mail: s-inoue@nict.go.jp [Advanced ICT Research Institute, National Institute of Information and Communications Technology (NICT), Kobe, Hyogo 651-2492 (Japan); Naoki, Tamari [Advanced ICT Research Institute, National Institute of Information and Communications Technology (NICT), Kobe, Hyogo 651-2492 (Japan); Tsukuba Research Laboratories, Tokuyama Corporation, Tsukuba, Ibaraki 300-4247 (Japan); Kinoshita, Toru; Obata, Toshiyuki; Yanagi, Hiroyuki [Tsukuba Research Laboratories, Tokuyama Corporation, Tsukuba, Ibaraki 300-4247 (Japan)

2015-03-30

Deep-ultraviolet (DUV) aluminum gallium nitride-based light-emitting diodes (LEDs) on transparent aluminum nitride (AlN) substrates with high light extraction efficiency and high power are proposed and demonstrated. The AlN bottom side surface configuration, which is composed of a hybrid structure of photonic crystals and subwavelength nanostructures, has been designed using finite-difference time-domain calculations to enhance light extraction. We have experimentally demonstrated an output power improvement of up to 196% as a result of the use of the embedded high-light-extraction hybrid nanophotonic structure. The DUV-LEDs produced have demonstrated output power as high as 90 mW in DC operation at a peak emission wavelength of 265 nm.

Purely cubic action for string field theory

Science.gov (United States)

Horowitz, G. T.; Lykken, J.; Rohm, R.; Strominger, A.

1986-01-01

It is shown that Witten's (1986) open-bosonic-string field-theory action and a closed-string analog can be written as a purely cubic interaction term. The conventional form of the action arises by expansion around particular solutions of the classical equations of motion. The explicit background dependence of the conventional action via the Becchi-Rouet-Stora-Tyutin operator is eliminated in the cubic formulation. A closed-form expression is found for the full nonlinear gauge-transformation law.

Analysis of RIA standard curve by log-logistic and cubic log-logit models

International Nuclear Information System (INIS)

Yamada, Hideo; Kuroda, Akira; Yatabe, Tami; Inaba, Taeko; Chiba, Kazuo

1981-01-01

In order to improve goodness-of-fit in RIA standard analysis, programs for computing log-logistic and cubic log-logit were written in BASIC using personal computer P-6060 (Olivetti). Iterative least square method of Taylor series was applied for non-linear estimation of logistic and log-logistic. Hear ''log-logistic'' represents Y = (a - d)/(1 + (log(X)/c)sup(b)) + d As weights either 1, 1/var(Y) or 1/σ 2 were used in logistic or log-logistic and either Y 2 (1 - Y) 2 , Y 2 (1 - Y) 2 /var(Y), or Y 2 (1 - Y) 2 /σ 2 were used in quadratic or cubic log-logit. The term var(Y) represents squares of pure error and σ 2 represents estimated variance calculated using a following equation log(σ 2 + 1) = log(A) + J log(y). As indicators for goodness-of-fit, MSL/S sub(e)sup(2), CMD% and WRV (see text) were used. Better regression was obtained in case of alpha-fetoprotein by log-logistic than by logistic. Cortisol standard curve was much better fitted with cubic log-logit than quadratic log-logit. Predicted precision of AFP standard curve was below 5% in log-logistic in stead of 8% in logistic analysis. Predicted precision obtained using cubic log-logit was about five times lower than that with quadratic log-logit. Importance of selecting good models in RIA data processing was stressed in conjunction with intrinsic precision of radioimmunoassay system indicated by predicted precision. (author)

Polar and non-polar heterocyclic amines in cooked fish and meat products and their corresponding pan residues.

Science.gov (United States)

Skog, K; Augustsson, K; Steineck, G; Stenberg, M; Jägerstad, M

1997-06-01

Fourteen cooked dishes with their corresponding pan residues were analysed for polar and non-polar heterocyclic amines using HPLC. The choice of foods, including beef, pork, poultry, game, fish, egg and sausages, was based on an investigation of an elderly population in Stockholm participating in an analytical epidemiological case-control study on cancer risks after intake of heterocyclic amines. The food items were prepared using normal household cooking practices, and to reflect the wide range of surface browning of the cooked dishes that would be encountered in this population, four cooking temperatures were used in the range 150-225 degrees C. For all food samples, the total amount of heterocyclic amines formed at 150 degrees C was less than 1 ng/g cooked product, and at 175 degrees C less than 2 ng/g. The highest concentrations of heterocyclic amines were detected in fillet of pork, reindeer meat and chicken breast fried at 200 and 225 degrees C and their corresponding pan residues. The total sum of 2-amino-3,8-dimethylimidazo-[4,5-f]quinoxaline, 2-amino-3,4,8-trimethylimidazo[4,5-f]quinoxaline and 2-amino-1-methyl-6-phenylimidazo[4,5-b]pyridine was about 1 microgram per 100 g portion (including pan residues) for reindeer meat and chicken breast, and between 1.9 and 6.3 micrograms per 100-g portion for fillet of pork. PhIP was the most abundant heterocyclic amine, identified in 73 of 84 samples, and the highest concentration of PhIP, 32.0 ng/g, was found in the pan residue from fillet of pork cooked at 225 degrees C. The non-polar heterocyclic amines 3-amino-1,4-dimethyl-5H-pyrido[4,3-b]indole and 3-amino-1-methyl-5H-pyrido[4,3-b]indole were detected in the range of 0.5-7.4 ng/g in most foods cooked at 225 degrees C, and also in meat sauce prepared at 200 and 175 degrees C. The other heterocyclic amines tested for: 2-amino-3-methylimidazo-[4,5-f]quinoline, 2-amino-3,4-dimethylimidazo[4,5-f]quinoline, 2-amino-6-methyl-pyrido-[1,2-a:3',2'-d]-imidazole and 2

Structure and lattice dynamics of GaN and AlN. Ab-initio investigations of strained polytypes and superlattices

Energy Technology Data Exchange (ETDEWEB)

Wagner, Jan-Martin

2004-10-14

In this dissertation, ab-initio investigations of the strain influence on vibrational properties of GaN and AlN as well as of short-period GaN/AlN superlattices are presented. Based on densityfunctional theory and density-functional perturbation theory, for differently strained structures complete phonon spectra and related properties are calculated using the local-density approximation and norm-conserving pseudopotentials. (orig.)

Interaction of GaN epitaxial layers with atomic hydrogen

Energy Technology Data Exchange (ETDEWEB)

Losurdo, M.; Giangregorio, M.M.; Capezzuto, P.; Bruno, G.; Namkoong, G.; Doolittle, W.A.; Brown, A.S

2004-08-15

GaN surface passivation processes are still under development and among others hydrogen treatments are investigated. In this study, we use non-destructive optical and electrical probes such as spectroscopic ellipsometry (SE) and surface potential Kelvin probe microscopy (SP-KPM) in conjunction with non-contact atomic force microscopy (AFM) for the study of the different reactivity of Ga-polar and N-polar GaN epitaxial layers with atomic hydrogen. The GaN epitaxial layers are grown by molecular beam epitaxy on sapphire (0 0 0 1) substrates, and GaN and AlN buffer layers are used to grow N-polar and Ga-polar films, respectively. The atomic hydrogen is produced by a remote rf (13.56 MHz) H{sub 2} plasma in order to rule out any ion bombardment of the GaN surface and make the interaction chemical. It is found that the interaction of GaN surfaces with atomic hydrogen depends on polarity, with N-polar GaN exhibiting greater reactivity. Furthermore, it is found that atomic hydrogen is effective in the passivation of grain boundaries and surface defects states.

Interaction of GaN epitaxial layers with atomic hydrogen

International Nuclear Information System (INIS)

Losurdo, M.; Giangregorio, M.M.; Capezzuto, P.; Bruno, G.; Namkoong, G.; Doolittle, W.A.; Brown, A.S.

2004-01-01

GaN surface passivation processes are still under development and among others hydrogen treatments are investigated. In this study, we use non-destructive optical and electrical probes such as spectroscopic ellipsometry (SE) and surface potential Kelvin probe microscopy (SP-KPM) in conjunction with non-contact atomic force microscopy (AFM) for the study of the different reactivity of Ga-polar and N-polar GaN epitaxial layers with atomic hydrogen. The GaN epitaxial layers are grown by molecular beam epitaxy on sapphire (0 0 0 1) substrates, and GaN and AlN buffer layers are used to grow N-polar and Ga-polar films, respectively. The atomic hydrogen is produced by a remote rf (13.56 MHz) H 2 plasma in order to rule out any ion bombardment of the GaN surface and make the interaction chemical. It is found that the interaction of GaN surfaces with atomic hydrogen depends on polarity, with N-polar GaN exhibiting greater reactivity. Furthermore, it is found that atomic hydrogen is effective in the passivation of grain boundaries and surface defects states

Relaxation phenomena of polar non-polar liquid mixtures under low ...

Indian Academy of Sciences (India)

der high-frequency electric field have gained much importance to study the structure as ... Purohit et al [1,2] and Srivastava and Srivastava [3] had measured the real ε¼ ... The cell containing the experimental liquid in a given solvent .... due to inductive, mesomeric and electromeric effects of the substituent polar groups at-.

Enhancement of TE polarized light extraction efficiency in nanoscale (AlN)m /(GaN)n (m>n) superlattice substitution for Al-rich AlGaN disorder alloy: ultra-thin GaN layer modulation

International Nuclear Information System (INIS)

Jiang, Xin-he; Shi, Jun-jie; Zhong, Hong-xia; Huang, Pu; Ding, Yi-min; Yu, Tong-jun; Shen, Bo; Lu, Jing; Zhang, Min; Wang, Xihua

2014-01-01

The problem of achieving high light extraction efficiency in Al-rich Al x Ga 1−x N is of paramount importance for the realization of AlGaN-based deep ultraviolet (DUV) optoelectronic devices. To solve this problem, we investigate the microscopic mechanism of valence band inversion and light polarization, a crucial factor for enhancing light extraction efficiency, in Al-rich Al x Ga 1−x N alloy using the Heyd–Scuseria–Ernzerhof hybrid functional, local-density approximation with 1/2 occupation, and the Perdew–Burke–Ernzerhof functional, in which the spin–orbit coupling effect is included. We find that the microscopic Ga-atom distribution can effectively modulate the valence band structure of Al-rich Al x Ga 1−x N. Moreover, we prove that the valence band arrangement in the decreasing order of heavy hole, light hole, and crystal-field split-off hole can be realized by using nanoscale (AlN) m /(GaN) n (m>n) superlattice (SL) substituting for Al-rich Al x Ga 1−x N disorder alloy as the active layer of optoelectronic devices due to the ultra-thin GaN layer modulation. The valence band maximum, i.e., the heavy hole band, has p x - and p y -like characteristics and is highly localized in the SL structure, which leads to the desired transverse electric (TE) polarized (E⊥c) light emission with improved light extraction efficiency in the DUV spectral region. Some important band-structure parameters and electron/hole effective masses are also given. The physical origin for the valence band inversion and TE polarization in (AlN) m /(GaN) n SL is analyzed in depth. (paper)

Method for estimating critical properties of heavy compounds suitable for cubic equations of state and its application to the prediction of vapor pressures

DEFF Research Database (Denmark)

Kontogeorgis, Georgios; Ioannis, Smirlis; Iakovos, Yakoumis

1997-01-01

S. The proposed scheme employs a recent group-contribution method (Constantinou et al. Fluid Phase Equilib. 1995, 103 (1), 11) for estimating the acentric factor. The two critical properties are estimated via a generalized correlation for the ratio T-c/P-c (with the van der Waals surface area) and the cubic Eo...... pressures for several nonpolar and slightly polar heavy compounds with very satisfactory results, essentially independent of the experimental point used. Furthermore, the method yields critical properties for heavy alkanes (N-c > 20) and other compounds which are in very good agreement with recent available......Cubic equations of state (EoS) are often used for correlating and predicting phase equilibria. Before extending any EoS to mixtures, reliable vapor-pressure prediction is essential. This requires experimental, if possible, critical temperatures T-c, pressures P-c, and acentric factor omega...

No-neighbours recurrence schemes for space-time Green's functions on a 3D simple cubic lattice

NARCIS (Netherlands)

De Hon, Bastiaan P.; Floris, Sander J.; Arnold, John M.

2018-01-01

Application of multivariate creative telescoping to a finite triple sum representation of the discrete space-time Green's function for an arbitrary numeric (non-symbolic) lattice point on a 3D simple cubic lattice produces a fast, no-neighbours, seventh-order, eighteenth-degree, discrete-time

Frustrated Heisenberg Antiferromagnets on Cubic Lattices: Magnetic Structures, Exchange Gaps, and Non-Conventional Critical Behaviour

OpenAIRE

Ignatenko, A. N.; Irkhin, V. Yu.

2016-01-01

We have studied the Heisenberg antiferromagnets characterized by the magnetic structures with the periods being two times larger than the lattice period. We have considered all the types of the Bravais lattices (simple cubic, bcc and fcc) and divided all these antiferromagnets into 7 classes i.e. 3 plus 4 classes denoted with symbols A and B correspondingly. The order parameter characterizing the degeneracies of the magnetic structures is an ordinary Neel vector for A classes and so-called 4-...

Plastic fluctuations in empty crystals formed by cubic wireframe particles

Science.gov (United States)

McBride, John M.; Avendaño, Carlos

2018-05-01

We present a computer simulation study of the phase behavior of colloidal hard cubic frames, i.e., particles with nonconvex cubic wireframe geometry interacting purely by excluded volume. Despite the propensity of cubic wireframe particles to form cubic phases akin to their convex counterparts, these particles exhibit unusual plastic fluctuations in which a random and dynamic fraction of particles rotate around their lattice positions in the crystal lattice while the remainder of the particles remains fully ordered. We argue that this unexpected effect stems from the nonconvex geometry of the particles in which the faces of a particle can be penetrated by the vertices of the nearest neighbors even at high number densities.

Eliminating cubic terms in the pseudopotential lattice Boltzmann model for multiphase flow

Science.gov (United States)

Huang, Rongzong; Wu, Huiying; Adams, Nikolaus A.

2018-05-01

It is well recognized that there exist additional cubic terms of velocity in the lattice Boltzmann (LB) model based on the standard lattice. In this work, elimination of these cubic terms in the pseudopotential LB model for multiphase flow is investigated, where the force term and density gradient are considered. By retaining high-order (≥3 ) Hermite terms in the equilibrium distribution function and the discrete force term, as well as introducing correction terms in the LB equation, the additional cubic terms of velocity are entirely eliminated. With this technique, the computational simplicity of the pseudopotential LB model is well maintained. Numerical tests, including stationary and moving flat and circular interface problems, are carried out to show the effects of such cubic terms on the simulation of multiphase flow. It is found that the elimination of additional cubic terms is beneficial to reduce the numerical error, especially when the velocity is relatively large. Numerical results also suggest that these cubic terms mainly take effect in the interfacial region and that the density-gradient-related cubic terms are more important than the other cubic terms for multiphase flow.

Kinks in systems with cubic and quartic anharmonicity

International Nuclear Information System (INIS)

Kashcheev, V.N.

1988-01-01

For a classical system of interacting particles with on-site cubic or quartic anharmonicity explicit analytic solutions of the d'Alembert equation are obtained in the form of kinks in the presence of dissipation (viscous or Rayleigh) and a constant force. These kinks will be asymptotically stable in the case of quartic anharmonicity and unstable in the case cubic anharmonicity

Bounds on Cubic Lorentz-Violating Terms in the Fermionic Dispersion Relation

OpenAIRE

Bertolami, O.; Rosa, J. G.

2004-01-01

We study the recently proposed Lorentz-violating dispersion relation for fermions and show that it leads to two distinct cubic operators in the momentum. We compute the leading order terms that modify the non-relativistic equations of motion and use experimental results for the hyperfine transition in the ground state of the ${}^9\\textrm Be^+$ ion to bound the values of the Lorentz-violating parameters $\\eta_1$ and $\\eta_2$ for neutrons. The resulting bounds depend on the value of the Lorenz-...

Frequency response improvement of a two-port surface acoustic wave device based on epitaxial AlN thin film

Science.gov (United States)

Gao, Junning; Hao, Zhibiao; Luo, Yi; Li, Guoqiang

2018-01-01

This paper presents an exploration on improving the frequency response of the symmetrical two-port AlN surface acoustic wave (SAW) device, using epitaxial AlN thin film on (0001) sapphire as the piezoelectric substrate. The devices were fabricated by lift-off processes with Ti/Al composite electrodes as interleaved digital transducers (IDT). The impact of DL and the number of the IDT finger pairs on the frequency response was carefully investigated. The overall properties of the device are found to be greatly improved with DL elongation, indicated by the reduced pass band ripple and increased stop band rejection ratio. The rejection increases by 8.3 dB when DL elongates from 15.5λ to 55.5λ and 4.4 dB further accompanying another 50λ elongation. This is because larger DL repels the stray acoustic energy out of the propagation path and provides a cleaner traveling channel for functional SAW, and at the same time restrains electromagnetic feedthrough. It is also found that proper addition of the IDT finger pairs is beneficial for the device response, indicated by the ripple reduction and the insertion loss drop.

Electronic and atomic structure of the AlnHn+2 clusters

DEFF Research Database (Denmark)

Martinez, Jose Ignacio; Alonso, J.A.

2008-01-01

The electronic and atomic structure of the family of hydrogenated Al clusters AlnHn+2 with n=4-11 has been studied using the density functional theory with the generalized gradient approximation (GGA) for exchange and correlation. All these clusters have substantial gaps between the highest...... a polyhedron of n vertices and n H atoms form strong H-Al terminal bonds; one pair of electrons is involved in each of those bonds. The remaining n+1 electron pairs form a delocalized cloud over the surface of the Al cage. The clusters fulfilling the Wade-Mingos rule have wider HOMO-LUMO gaps...... and are chemically more stable. The trends in the gap have some reflections in the form of the photoabsorption spectra, calculated in the framework of time-dependent density functional theory using the GGA single-particle energies and orbitals and a local density approximation exchange-correlation kernel....

Structural insights into the cubic-hexagonal phase transition kinetics of monoolein modulated by sucrose solutions.

Science.gov (United States)

Reese, Caleb W; Strango, Zachariah I; Dell, Zachary R; Tristram-Nagle, Stephanie; Harper, Paul E

2015-04-14

Using DSC (differential scanning calorimetry), we measure the kinetics of the cubic-HII phase transition of monoolein in bulk sucrose solutions. We find that the transition temperature is dramatically lowered, with each 1 mol kg(-1) of sucrose concentration dropping the transition by 20 °C. The kinetics of this transition also slow greatly with increasing sucrose concentration. For low sucrose concentrations, the kinetics are asymmetric, with the cooling (HII-cubic) transition taking twice as long as the heating (cubic-HII) transition. This asymmetry in transition times is reduced for higher sucrose concentrations. The cooling transition exhibits Avrami exponents in the range of 2 to 2.5 and the heating transition shows Avrami exponents ranging from 1 to 3. A classical Avrami interpretation would be that these processes occur via a one or two dimensional pathway with variable nucleation rates. A non-classical perspective would suggest that these exponents reflect the time dependence of pore formation (cooling) and destruction (heating). New density measurements of monoolein show that the currently accepted value is about 5% too low; this has substantial implications for electron density modeling. Structural calculations indicate that the head group area and lipid length in the cubic-HII transition shrink by about 12% and 4% respectively; this reduction is practically the same as that seen in a lipid with a very different molecular structure (rac-di-12:0 β-GlcDAG) that makes the same transition. Thermodynamic considerations suggest there is a hydration shell about one water molecule thick in front of the lipid head groups in both the cubic and HII phases.

Infrared and optical polarimetry of the radio elliptical IC 5063 (PKS2048-57): discovery of a highly polarized non-thermal nucleus

Energy Technology Data Exchange (ETDEWEB)

Hough, J H; Brindle, C; Axon, D J; Bailey, J; Sparks, W B

1987-02-15

Two-aperture optical and near-infrared polarization and flux measurements of the radio elliptical galaxy IC 5063 are presented. Analysis of the polarized flux shows that the large infrared excess in the nucleus most likely arises from a steep-spectrum non-thermal source with a polarization of 17 per cent and near-infrared luminosity 6x10/sup 41/ erg s/sup -1/. This result suggests that IC5063 is closely related to the more luminous blazars. The origin of the polarization in the optical is, however, not clear.

Infrared and optical polarimetry of the radio elliptical IC 5063 (PKS2048-57): discovery of a highly polarized non-thermal nucleus

International Nuclear Information System (INIS)

Hough, J.H.; Brindle, C.; Axon, D.J.; Bailey, J.; Sparks, W.B.

1987-01-01

Two-aperture optical and near-infrared polarization and flux measurements of the radio elliptical galaxy IC 5063 are presented. Analysis of the polarized flux shows that the large infrared excess in the nucleus most likely arises from a steep-spectrum non-thermal source with a polarization of 17 per cent and near-infrared luminosity 6x10 41 erg s -1 . This result suggests that IC5063 is closely related to the more luminous blazars. The origin of the polarization in the optical is, however, not clear. (author)

Adsorption of H atoms on cubic Er2O3 (0 0 1) surface: A DFT study

International Nuclear Information System (INIS)

Mao, Wei; Chikada, Takumi; Shimura, Kenichiro; Suzuki, Akihiro; Yamaguchi, Kenji; Terai, Takayuki

2013-01-01

First-principles plane wave calculations based on spin-polarized density functional theory (DFT) and generalized gradient approximation (GGA) have been used to study the adsorption of H atoms on cubic Er 2 O 3 (0 0 1) surface. We identify stable adsorption positions and find that H preferentially adsorbs on top of fourfold-hollow sites and transfers electrons to the surface, resulting in the formations of covalent bonds to the nearest neighboring four oxygen atoms. In the most energetically favorable adsorption sites, It was found that H bonds with O atoms at the cubic Er 2 O 3 (0 0 1) surface with an adsorption energy of −295.68 kJ mol −1 at coverage 1/8 ML, and the adsorption energy is inclined to decrease with the increase of H coverage (>1/4 ML). In addition, our calculations indicate that the dissociative H atom configurations have adsorption energies that are at least 152.64 kJ mol −1 greater than the H 2 molecule configurations on the surface. These results discussed in the context of erbium oxide slabs are employed to rationalize some processes regarding to the hydrogen isotope permeation behavior of tritium permeation barrier

Hydration of non-polar anti-parallel β-sheets

International Nuclear Information System (INIS)

Urbic, Tomaz; Dias, Cristiano L.

2014-01-01

In this work we focus on anti-parallel β-sheets to study hydration of side chains and polar groups of the backbone using all-atom molecular dynamics simulations. We show that: (i) water distribution around the backbone does not depend significantly on amino acid sequence, (ii) more water molecules are found around oxygen than nitrogen atoms of the backbone, and (iii) water molecules around nitrogen are highly localized in the planed formed by peptide backbones. To study hydration around side chains we note that anti-parallel β-sheets exhibit two types of cross-strand pairing: Hydrogen-Bond (HB) and Non-Hydrogen-Bond (NHB) pairing. We show that distributions of water around alanine, leucine, and valine side chains are very different at HB compared to NHB faces. For alanine pairs, the space between side chains has a higher concentration of water if residues are located in the NHB face of the β-sheet as opposed to the HB face. For leucine residues, the HB face is found to be dry while the space between side chains at the NHB face alternates between being occupied and non-occupied by water. Surprisingly, for valine residues the NHB face is dry, whereas the HB face is occupied by water. We postulate that these differences in water distribution are related to context dependent propensities observed for β-sheets

Spectral intensities in cubic systems. I. Progressions based upon parity vibrational modes

International Nuclear Information System (INIS)

Acevedo, R.; Vasquez, S.O.; Meruane, T.; Poblete, V.; Pozo, J.

1998-01-01

The well-resolved emission and absorption spectra of centrosymmetric coordination compounds of the transition metal ions have been used widely to provide the experimental data against which to test theoretical models of vibronic intensities. With reference to the 2 E g → 4 A 2g luminescence transition, at a perfect octahedral site in Cs 2 SiF 6 , over than one hundred vibronic lines are observed with line widths of a few wavenumber spread over some 3000 cm -1 . This paper reports a through examination of both the electronic and vibrational factors, which influences the observed vibronic intensities of the various assigned and identified lines in the spectra of the MnF 6 2- complex ion in the Cs 2 SiF 6 cubic lattice. The origin and nature of higher order vibronic interactions are analysed on the basis of a symmetrized vibronic crystal field-ligand polarization model. (Author)

Order and chaos in polarized nonlinear optics

International Nuclear Information System (INIS)

Holm, D.D.

1990-01-01

Methods for investigating temporal complexity in Hamiltonian systems are applied to the dynamics of a polarized optical laser beam propagating as a travelling wave in a medium with cubically nonlinear polarizability (i.e., a Kerr medium). The theory of Hamiltonian systems with symmetry is used to study the geometry of phase space for the optical problem, transforming from C 2 to S 2 x (J,θ), where (J,θ) is a symplectic action-angle pair. The bifurcations of the phase portraits of the Hamiltonian motion on S 2 are classified and shown graphically. These bifurcations create various saddle connections on S 2 as either J (the beam intensity), or the optical parameters of the medium are varied. After this bifurcation analysis, the Melnikov method is used to demonstrate analytically that the saddle connections break and intersect transversely in a Poincare map under spatially periodic perturbations of the optical parameters of the medium. These transverse intersections in the Poincare map imply intermittent polarization switching with extreme sensitivity to initial conditions characterized by a Smale horseshoe construction for the travelling waves of a polarized optical laser pulse. The resulting chaotic behavior in the form of sensitive dependence on initial conditions may have implications for the control and predictability of nonlinear optical polarization switching in birefringent media. 19 refs., 2 figs., 1 tab

High molecular weight non-polar hydrocarbons as pure model substances and in motor oil samples can be ionized without fragmentation by atmospheric pressure chemical ionization mass spectrometry.

Science.gov (United States)

Hourani, Nadim; Kuhnert, Nikolai

2012-10-15

High molecular weight non-polar hydrocarbons are still difficult to detect by mass spectrometry. Although several studies have targeted this problem, lack of good self-ionization has limited the ability of mass spectrometry to examine these hydrocarbons. Failure to control ion generation in the atmospheric pressure chemical ionization (APCI) source hampers the detection of intact stable gas-phase ions of non-polar hydrocarbon in mass spectrometry. Seventeen non-volatile non-polar hydrocarbons, reported to be difficult to ionize, were examined by an optimized APCI methodology using nitrogen as the reagent gas. All these analytes were successfully ionized as abundant and intact stable [M-H](+) ions without the use of any derivatization or adduct chemistry and without significant fragmentation. Application of the method to real-life hydrocarbon mixtures like light shredder waste and car motor oil was demonstrated. Despite numerous reports to the contrary, it is possible to ionize high molecular weight non-polar hydrocarbons by APCI, omitting the use of additives. This finding represents a significant step towards extending the applicability of mass spectrometry to non-polar hydrocarbon analyses in crude oil, petrochemical products, waste or food. Copyright © 2012 John Wiley & Sons, Ltd.

Passive technologies for future large-scale photonic integrated circuits on silicon: polarization handling, light non-reciprocity and loss reduction

Directory of Open Access Journals (Sweden)

Daoxin Dai

2012-03-01

Full Text Available Silicon-based large-scale photonic integrated circuits are becoming important, due to the need for higher complexity and lower cost for optical transmitters, receivers and optical buffers. In this paper, passive technologies for large-scale photonic integrated circuits are described, including polarization handling, light non-reciprocity and loss reduction. The design rule for polarization beam splitters based on asymmetrical directional couplers is summarized and several novel designs for ultra-short polarization beam splitters are reviewed. A novel concept for realizing a polarization splitter–rotator is presented with a very simple fabrication process. Realization of silicon-based light non-reciprocity devices (e.g., optical isolator, which is very important for transmitters to avoid sensitivity to reflections, is also demonstrated with the help of magneto-optical material by the bonding technology. Low-loss waveguides are another important technology for large-scale photonic integrated circuits. Ultra-low loss optical waveguides are achieved by designing a Si3N4 core with a very high aspect ratio. The loss is reduced further to <0.1 dB m−1 with an improved fabrication process incorporating a high-quality thermal oxide upper cladding by means of wafer bonding. With the developed ultra-low loss Si3N4 optical waveguides, some devices are also demonstrated, including ultra-high-Q ring resonators, low-loss arrayed-waveguide grating (demultiplexers, and high-extinction-ratio polarizers.

Variable-temperature single-crystal X-ray diffraction study of tetragonal and cubic perovskite-type barium titanate phases.

Science.gov (United States)

Nakatani, Tomotaka; Yoshiasa, Akira; Nakatsuka, Akihiko; Hiratoko, Tatsuya; Mashimo, Tsutomu; Okube, Maki; Sasaki, Satoshi

2016-02-01

A variable-temperature single-crystal X-ray diffraction study of a synthetic BaTiO3 perovskite has been performed over the temperature range 298-778 K. A transition from a tetragonal (P4mm) to a cubic (Pm3m) phase has been revealed near 413 K. In the non-centrosymmetric P4mm symmetry group, both Ti and O atoms are displaced along the c-axis in opposite directions with regard to the Ba position fixed at the origin, so that Ti(4+) and Ba(2+) cations occupy off-center positions in the TiO6 and BaO12 polyhedra, respectively. Smooth temperature-dependent changes of the atomic coordinates become discontinuous with the phase transition. Our observations imply that the cations remain off-center even in the high-temperature cubic phase. The temperature dependence of the mean-square displacements of Ti in the cubic phase includes a significant static component which means that Ti atoms are statistically distributed in the off-center positions.

Promoting Diversity Through Polar Interdisciplinary Coordinated Education (Polar ICE)

Science.gov (United States)

McDonnell, J. D.; Hotaling, L. A.; Garza, C.; Van Dyk, P. B.; Hunter-thomson, K. I.; Middendorf, J.; Daniel, A.; Matsumoto, G. I.; Schofield, O.

2017-12-01

Polar Interdisciplinary Coordinated Education (ICE) is an education and outreach program designed to provide public access to the Antarctic and Arctic regions through polar data and interactions with the scientists. The program provides multi-faceted science communication training for early career scientists that consist of a face-to face workshop and opportunities to apply these skills. The key components of the scientist training workshop include cultural competency training, deconstructing/decoding science for non-expert audiences, the art of telling science stories, and networking with members of the education and outreach community and reflecting on communication skills. Scientists partner with educators to provide professional development for K-12 educators and support for student research symposia. Polar ICE has initiated a Polar Literacy initiative that provides both a grounding in big ideas in polar science and science communication training designed to underscore the importance of the Polar Regions to the public while promoting interdisciplinary collaborations between scientists and educators. Our ultimate objective is to promote STEM identity through professional development of scientists and educators while developing career awareness of STEM pathways in Polar science.

Spin-polarized tunneling through a ferromagnetic insulator

NARCIS (Netherlands)

Kok, M.; Kok, M.; Beukers, J.N.; Brinkman, Alexander

2009-01-01

The polarization of the tunnel conductance of spin-selective ferromagnetic insulators is modeled, providing a generalized concept of polarization including both the effects of electrode and barrier polarization. The polarization model is extended to take additional non-spin-polarizing insulating

Binding energies and chemical shifts of least bound core electron excitations in cubic Asub(N)Bsub(8-N) semiconductors

International Nuclear Information System (INIS)

Bechstedt, F.; Enderlein, R.; Wischnewski, R.

1981-01-01

Core electron binding energies Esup(B) with respect to the vacuum level and their chemical shifts are calculated for the least bound core levels of cations and anions of cubic Asub(N)Bsub(8-N) semiconductors. Starting from the HF-binding energy of the free atom absolute values of Esup(B) are obtained by adding core level shifts and relaxation energies. Core level shifts are calculated by means of an electrostatic model with ionic and bond charges according to Phillips' bond charge model. For the calculation of relaxation energies the linear dielectric theory of electronic polarization is applied. Valence and core electrons, and diagonal and non-diagonal screening are taken into account. The theoretical results for chemical shifts of binding energies are compared with experimental values from XPS-measurements corrected by work function data. Good agreement is obtained in all cases within the error limit of about one eV. Chemical and atomic trends of core level shifts, relaxation energies, and binding energies are discussed in terms of changes of atomic and solid state parameters. Chemical shifts and relaxation energies are predicted for various ternary Asub(N)Bsub(8-N) compounds. (author)

Interaction of dispersed cubic phases with blood components

DEFF Research Database (Denmark)

Bode, J C; Kuntsche, Judith; Funari, S S

2013-01-01

The interaction of aqueous nanoparticle dispersions, e.g. based on monoolein/poloxamer 407, with blood components is an important topic concerning especially the parenteral way of administration. Therefore, the influence of human and porcine plasma on dispersed cubic phases was investigated. Part...... activity of cubic phases based on monoolein and poloxamer 188, on soy phosphatidylcholine, glycerol dioleate and polysorbate 80 or the parenteral fat emulsion Lipofundin MCT 20%....

The temperature dependence of the Young's modulus of MgSiN2, AlN and Si3N4

NARCIS (Netherlands)

Bruls, R.J.; Hintzen, H.T.J.M.; With, de G.; Metselaar, R.

2001-01-01

The temperature dependence of the Young's modulus of MgSiN2 and AlN was measured between 293 and 973 K using the impulse excitation method and compared with literature data reported for Si3N4. The data could be fitted with . The values of the fitting parameters E0 and T0 are related to the Debye

Cubic spline numerical solution of an ablation problem with convective backface cooling

Science.gov (United States)

Lin, S.; Wang, P.; Kahawita, R.

1984-08-01

An implicit numerical technique using cubic splines is presented for solving an ablation problem on a thin wall with convective cooling. A non-uniform computational mesh with 6 grid points has been used for the numerical integration. The method has been found to be computationally efficient, providing for the care under consideration of an overall error of about 1 percent. The results obtained indicate that the convective cooling is an important factor in reducing the ablation thickness.

Circular polarization of gravitational waves from non-rotating supernova cores: a new probe into the pre-explosion hydrodynamics

Science.gov (United States)

Hayama, Kazuhiro; Kuroda, Takami; Kotake, Kei; Takiwaki, Tomoya

2018-06-01

We present an analysis of the circular polarization of gravitational waves (GWs) using results from three-dimensional (3D), general relativistic (GR) core-collapse simulations of a non-rotating 15 M⊙ star. For the signal detection, we perform a coherent network analysis taking into account the four interferometers of LIGO Hanford, LIGO Livingston, VIRGO, and KAGRA. We focus on the Stokes V parameter, which directly characterizes the asymmetry of the GW circular polarization. We find that the amplitude of the GW polarization becomes bigger for our 3D-GR model that exhibits strong activity of the standing accretion shock instability (SASI). Our results suggest that the SASI-induced accretion flows to the proto-neutron star (PNS) lead to a characteristic, low-frequency modulation (100-200 Hz) in both the waveform and the GW circular polarization. By estimating the signal-to-noise ratio of the GW polarization, we demonstrate that the detection horizon of the circular polarization extends by more than a factor of several times farther comparing to that of the GW amplitude. Our results suggest that the GW circular polarization, if detected, could provide a new probe into the pre-explosion hydrodynamics such as the SASI activity and the g-mode oscillation of the PNS.

Circular polarization of gravitational waves from non-rotating supernova cores: a new probe into the pre-explosion hydrodynamics

Science.gov (United States)

Hayama, Kazuhiro; Kuroda, Takami; Kotake, Kei; Takiwaki, Tomoya

2018-04-01

We present an analysis of the circular polarization of gravitational-waves (GWs) using results from three-dimensional (3D), general relativistic (GR) core-collapse simulations of a non-rotating 15M⊙ star. For the signal detection, we perform a coherent network analysis taking into account the four interferometers of LIGO Hanford, LIGO Livingston, VIRGO, and KAGRA. We focus on the Stokes V parameter, which directly characterizes the asymmetry of the GW circular polarization. We find that the amplitude of the GW polarization becomes bigger for our 3D-GR model that exhibits strong activity of the standing accretion shock instability (SASI). Our results suggest that the SASI-induced accretion flows to the proto-neutron star (PNS) lead to a characteristic, low-frequency modulation (100 ˜ 200 Hz) in both the waveform and the GW circular polarization. By estimating the signal-to-noise ratio of the GW polarization, we demonstrate that the detection horizon of the circular polarization extends by more than a factor of several times farther comparing to that of the GW amplitude. Our results suggest that the GW circular polarization, if detected, could provide a new probe into the pre-explosion hydrodynamics such as the SASI activity and the g-mode oscillation of the PNS.

Non-invasive detection of candidate pregnancy protein biomarkers in the feces of captive polar bears (Ursus maritimus).

Science.gov (United States)

Curry, E; Stoops, M A; Roth, T L

2012-07-15

Currently, there is no method of accurately and non-invasively diagnosing pregnancy in polar bears. Specific proteins may exhibit altered profiles in the feces of pregnant bears, but predicting appropriate candidate proteins to investigate is speculative at best. The objective of this study was to identify potential pregnancy biomarker proteins based on their increased abundance in the feces of pregnant polar bears compared to pseudopregnant females (controls) using two-dimensional in-gel electrophoresis (2D-DIGE) and mass spectrometry (MS). Three 2D-DIGE gels were performed to evaluate fecal protein profiles from controls (n=3) and pregnant polar bears (n=3). There were 2224.67±52.39 (mean±SEM) spots resolved per gel. Of these, only five proteins were elevated in the pregnant group (P99.9% confidence interval. The 11 spots represented seven distinct proteins, five of which were significantly more abundant in the pregnant group: IgGFc-binding protein, filamin-C, carboxypeptidase B, transthyretin, and immunoglobulin heavy chain variable region. To our knowledge, this was the first study that employed 2D-DIGE to identify differentially expressed proteins in fecal samples to characterize a physiological condition other than those related to gastrointestinal disorders. These promising results provided a strong foundation for ensuing efforts to develop a non-invasive pregnancy assay for use in both captive and wild polar bears. Copyright © 2012 Elsevier Inc. All rights reserved.

Technetium-99m labelled N,N-ethyldithiocarbamate, a non-polar complex with slow hepatic clearance

International Nuclear Information System (INIS)

Pojer, P.M.; Baldas, J.

1980-05-01

A sup(99m)Tc-N,N-diethyldithiocarbamate (DDC) complex was prepared using formamidine sulphinic acid as the reducing agent for pertechnetate sup(99m) Tc. The complex was found to be non-polar. In mice the complex localised in the liver and intestines. Urinary excretion was very low and hepatic clearance relatively slow

Physical vapor deposition of cubic boron nitride thin films

International Nuclear Information System (INIS)

Kester, D.J.

1991-01-01

Cubic boron nitride was successfully deposited using physical vapor-deposition methods. RF-sputtering, magnetron sputtering, dual-ion-beam deposition, and ion-beam-assisted evaporation were all used. The ion-assisted evaporation, using boron evaporation and bombardment by nitrogen and argon ions, led to successful cubic boron nitride growth over the widest and most controllable range of conditions. It was found that two factors were important for c-BN growth: bombardment of the growing film and the presence of argon. A systematic study of the deposition conditions was carried out. It was found that the value of momentum transferred into the growing from by the bombarding ions was critical. There was a very narrow transition range in which mixed cubic and hexagonal phase films were prepared. Momentum-per-atom value took into account all the variables involved in ion-assisted deposition: deposition rate, ion energy, ion flux, and ion species. No other factor led to the same control of the process. The role of temperature was also studied; it was found that at low temperatures only mixed cubic and hexagonal material are deposited

d and f electrons in a qp-quantized cubical field

International Nuclear Information System (INIS)

Kibler, M.; Sztucki, J.

1993-03-01

A procedure for qp-quantizing a crystal-field potential V with an arbitrary symmetry G is developed. Such a procedure is applied to the case where V involves cubic components (G=0) of the degrees 4 and 6. This case corresponds to d and f electrons in a qp-quantized cubical potential. It is shown that the qp-quantization of the considered cubical potential is equivalent to a symmetry breaking of type O→D 4 . A general conjecture about this symmetry breaking phenomenon is given. (author) 21 refs

Growth of cubic InN on r-plane sapphire

International Nuclear Information System (INIS)

Cimalla, V.; Pezoldt, J.; Ecke, G.; Kosiba, R.; Ambacher, O.; Spiess, L.; Teichert, G.; Lu, H.; Schaff, W.J.

2003-01-01

InN has been grown directly on r-plane sapphire substrates by plasma-enhanced molecular-beam epitaxy. X-ray diffraction investigations have shown that the InN layers consist of a predominant zinc blende (cubic) structure along with a fraction of the wurtzite (hexagonal) phase which content increases with proceeding growth. The lattice constant for zinc blende InN was found to be a=4.986 A. For this unusual growth of a metastable cubic phase on a noncubic substrate an epitaxial relationship was proposed where the metastable zinc blende phase grows directly on the r-plane sapphire while the wurtzite phase arises as the special case of twinning in the cubic structure

Recombination dynamics of excitons with low non-radiative component in semi-polar (10-11)-oriented GaN/AlGaN multiple quantum wells

Science.gov (United States)

Rosales, D.; Gil, B.; Bretagnon, T.; Guizal, B.; Izyumskaya, N.; Monavarian, M.; Zhang, F.; Okur, S.; Avrutin, V.; Özgür, Ü.; Morkoç, H.

2014-09-01

Optical properties of GaN/Al0.2Ga0.8N multiple quantum wells grown with semi-polar (10-11) orientation on patterned 7°-off Si (001) substrates have been investigated. Studies performed at 8 K reveal the in-plane anisotropic behavior of the QW photoluminescence (PL) intensity for this semi-polar orientation. The time resolved PL measurements were carried out in the temperature range from 8 to 295 K to deduce the effective recombination decay times, with respective radiative and non-radiative contributions. The non-radiative component remains relatively weak with increasing temperature, indicative of high crystalline quality. The radiative decay time is a consequence of contribution from both localized and free excitons. We report an effective density of interfacial defects of 2.3 × 1012 cm-2 and a radiative recombination time of τloc = 355 ps for the localized excitons. This latter value is significantly larger than those reported for the non-polar structures, which we attribute to the presence of a weak residual electric field in the semi-polar QW layers.

Growth and characterization of a-axis oriented Cr-doped AlN films by DC magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Panda, Padmalochan; Ramaseshan, R., E-mail: seshan@igcar.gov.in; Dash, S. [Materials Science Group, IGCAR, Kalpakkam, 603102 (India); Krishna, Nanda Gopala [Corrosion Science and Technology Group, IGCAR, Kalpakkam, 603102 (India)

2016-05-23

Wurtzite type Cr-doped AlN thin films were grown on Si (100) substrates using DC reactive magnetron sputtering with a function of N{sub 2} concentration (15 to 25%). Evolution of crystal structure of these films was studied by GIXRD where a-axis preferred orientation was observed. The electronic binding energy and concentration of Cr in these films were estimated by X-ray photoemission spectroscopy (XPS). We have observed indentation hardness (H{sub IT}) of around 28.2 GPa for a nitrogen concentration of 25%.

Stoichiometric control for heteroepitaxial growth of smooth ɛ-Ga2O3 thin films on c-plane AlN templates by mist chemical vapor deposition

Science.gov (United States)

Tahara, Daisuke; Nishinaka, Hiroyuki; Morimoto, Shota; Yoshimoto, Masahiro

2017-07-01

Epitaxial ɛ-Ga2O3 thin films with smooth surfaces were successfully grown on c-plane AlN templates by mist chemical vapor deposition. Using X-ray diffraction 2θ-ω and φ scans, the out-of-plane and in-plane epitaxial relationship was determined to be (0001) ɛ-Ga2O3 [10\\bar{1}0] ∥ (0001)AlN[10\\bar{1}0]. The gallium/oxygen ratio was controlled by varying the gallium precursor concentration in the solution. While scanning electron microscopy showed the presence of large grains on the surfaces of the films formed for low concentrations of oxygen species, no large grains were observed under stoichiometric conditions. Cathodoluminescence measurements showed a deep-level emission ranging from 1.55-3.7 eV; however, no band-edge emission was observed.

High-quality AlGaN/GaN grown on sapphire by gas-source molecular beam epitaxy using a thin low-temperature AlN layer

Energy Technology Data Exchange (ETDEWEB)

Jurkovic, M.J.; Li, L.K.; Turk, B.; Wang, W.I.; Syed, S.; Simonian, D.; Stormer, H.L.

2000-07-01

Growth of high-quality AlGaN/GaN heterostructures on sapphire by ammonia gas-source molecular beam epitaxy is reported. Incorporation of a thin AlN layer grown at low temperature within the GaN buffer is shown to result in enhanced electrical and structural characteristics for subsequently grown heterostructures. AlGaN/GaN structures exhibiting reduced background doping and enhanced Hall mobilities (2100, 10310 and 12200 cm{sup 2}/Vs with carrier sheet densities of 6.1 x 10{sup 12} cm{sup {minus}2}, and 5.8 x 10{sup 12} cm{sup {minus}2} at 300 K, 77 K, and 0.3 K, respectively) correlate with dislocation filtering in the thin AlN layer. Magnetotransport measurements at 0.3 K reveal well-resolved Shubnikov-de Haas oscillations starting at 3 T.

Concave pulse shaping of a circularly polarized laser pulse from non-uniform overdense plasmas

Energy Technology Data Exchange (ETDEWEB)

Hur, Min Sup [School of Natural Science, UNIST, BanYeon-Ri 100, Ulju-gun, Ulsan, 689-798 (Korea, Republic of); Kulagin, Victor V. [Sternberg Astronomical Institute, Moscow State University, Universitetsky prosp. 13, Moscow, 119992 (Russian Federation); Suk, Hyyong, E-mail: hysuk@gist.ac.kr [Department of Physics and Photon Science, GIST, 123 Cheomdan-gwangiro, Buk-gu, Gwangju, 500-712 (Korea, Republic of)

2015-03-20

Pulse shaping of circularly polarized laser pulses in nonuniform overdense plasmas are investigated numerically. Specifically we show by two-dimensional particle-in-cell simulations the generation of a concave pulse front of a circularly polarized, a few tens of petawatt laser pulse from a density-tapered, overdense plasma slab. The concept used for the transverse-directional shaping is the differential transmittance depending on the plasma density, and the laser intensity. For suitable selection of the slab parameters for the concave pulse shaping, we studied numerically the pulse transmittance, which can be used for further parameter design of the pulse shaping. The concavely shaped circularly polarized pulse is expected to add more freedom in controlling the ion-beam characteristics in the RPDA regime. - Highlights: • Laser pulse shaping for a concave front by non-uniform overdense plasma was studied. • Particle-in-cell (PIC) simulations were used for the investigation. • A laser pulse can be shaped by a density-tapered overdense plasma. • The concave and sharp pulse front are useful in many laser–plasma applications. • They are important for ion acceleration, especially in the radiation pressure dominant regime.

[A non-invasive glucose measurement method based on orthogonal twin-polarized light and its pilot experimental investigation].

Science.gov (United States)

Wang, Hong; Wu, Baoming; Liu, Ding

2010-04-01

In order to overcome the existing shortcomings of the non-invasive blood glucose polarized light measurement methods of optical heterodyne detection and direct detection, we present in this paper a new orthogonal twin-polarized light (OTPL) non-invasive blood glucose measurement method, which converts the micro-angle rotated by an optical active substance such as glucose to the energy difference of OTPL, amplifies the signals by the high-sensitivity lock-in amplifier made of relevant principle, controls Faraday coil current to compensate the changes in deflection angle caused by blood glucose, and makes use of the linear relationship between blood glucose concentration and Faraday coil current to calculate blood glucose concentration. In our comparative experiment using the data measured by LX-20 automatic biochemical analyzer as a standard, a 0.9777 correlation coefficient is obtained in glucose concentration experiment, and a 0.952 in serum experiment. The result shows that this method has higher detection sensitivity and accuracy and lays a foundation for the development of practical new type of non-invasive blood glucose tester for diabetic patients.

Spectral intensities in cubic systems. I. Progressions based upon parity vibrational modes

Energy Technology Data Exchange (ETDEWEB)

Acevedo, R.; Vasquez, S.O. [Department of Basic Chemistry, Faculty of Physical and Mathematical Sciences, University of Chile. Tupper 2069, Casilla 2777, Santiago, Chile (Chile); Meruane, T. [Department of Chemistry, Universidad Metropolitana de Ciencias de la Educacion. Av. J.P. Alessandri 774, Casilla 147, C. Santiago, Chile (Chile); Poblete, V. [Department of Nuclear Materials, Lo Aguirre, Comision Chilena de Energia Nuclear. Amunategui 95, Casilla 188-D, Santiago, Chile (Chile); Pozo, J. [Facultad de Ciencias de la Ingenieria. Universidad Diego Portales. Casilla 298-V, Santiago, Chile (Chile)

1998-12-01

The well-resolved emission and absorption spectra of centrosymmetric coordination compounds of the transition metal ions have been used widely to provide the experimental data against which to test theoretical models of vibronic intensities. With reference to the {sup 2} E{sub g} {yields} {sup 4} A{sub 2g} luminescence transition, at a perfect octahedral site in Cs{sub 2}SiF{sub 6}, over than one hundred vibronic lines are observed with line widths of a few wavenumber spread over some 3000 cm{sup -1}. This paper reports a through examination of both the electronic and vibrational factors, which influences the observed vibronic intensities of the various assigned and identified lines in the spectra of the MnF{sub 6} {sup 2-} complex ion in the Cs{sub 2}SiF{sub 6} cubic lattice. The origin and nature of higher order vibronic interactions are analysed on the basis of a symmetrized vibronic crystal field-ligand polarization model. (Author)

Characterization of a smartphone size haptic rendering system based on thin-film AlN actuators on glass substrates

Science.gov (United States)

Bernard, F.; Casset, F.; Danel, J. S.; Chappaz, C.; Basrour, S.

2016-08-01

This paper presents for the first time the characterization of a smartphone-size haptic rendering system based on the friction modulation effect. According to previous work and finite element modeling, the homogeneous flexural modes are needed to get the haptic feedback effect. The device studied consists of a thin film AlN transducers deposited on an 110  ×  65 mm2 glass substrate. The transducer’s localization on the glass plate allows a transparent central area of 90  ×  49 mm2. Electrical and mechanical parameters of the system are extracted from measurement. From this extraction, the electrical impedance matching reduced the applied voltage to 17.5 V AC and the power consumption to 1.53 W at the resonance frequency of the vibrating system to reach the haptic rendering specification. Transient characterizations of the actuation highlight a delay under the dynamic tactile detection. The characterization of the AlN transducers used as sensors, including the noise rejection, the delay or the output charge amplitude allows detections with high accuracy of any variation due to external influences. Those specifications are the first step to a low-power-consumption feedback-looped system.

Characterization of a smartphone size haptic rendering system based on thin-film AlN actuators on glass substrates

International Nuclear Information System (INIS)

Bernard, F; Basrour, S; Casset, F; Danel, J S; Chappaz, C

2016-01-01

This paper presents for the first time the characterization of a smartphone-size haptic rendering system based on the friction modulation effect. According to previous work and finite element modeling, the homogeneous flexural modes are needed to get the haptic feedback effect. The device studied consists of a thin film AlN transducers deposited on an 110  ×  65 mm 2 glass substrate. The transducer’s localization on the glass plate allows a transparent central area of 90  ×  49 mm 2 . Electrical and mechanical parameters of the system are extracted from measurement. From this extraction, the electrical impedance matching reduced the applied voltage to 17.5 V AC and the power consumption to 1.53 W at the resonance frequency of the vibrating system to reach the haptic rendering specification. Transient characterizations of the actuation highlight a delay under the dynamic tactile detection. The characterization of the AlN transducers used as sensors, including the noise rejection, the delay or the output charge amplitude allows detections with high accuracy of any variation due to external influences. Those specifications are the first step to a low-power-consumption feedback-looped system. (paper)

Theoretical-experimental study of the non-thermal effects of the polarized laser radiation in living tissues

International Nuclear Information System (INIS)

Ribeiro, M.S.

1991-01-01

In the present research we had as a fundamental objective to analyse the non-thermal effects of the laser polarized light in biological tissues. These effects were performed with low power laser output. The theoretical procedure consisted in looking for a simple model which connects the effect of light polarized with microscopically rough tissues using well established physical concepts. Experimentally, we created artificial wounds on the back of animals using liquid nitrogen (this method was chosen because it does not interfere in the biochemistry of the animal tissue). For the wound irradiation we have utilized a He-Ne attached to an optical system. (author)

Scattering with polarized neutrons

International Nuclear Information System (INIS)

Schweizer, J.

2007-01-01

In the history of neutron scattering, it was shown very soon that the use of polarized neutron beams brings much more information than usual scattering with unpolarized neutrons. We shall develop here the different scattering methods that imply polarized neutrons: 1) polarized beams without polarization analysis, the flipping ratio method; 2) polarized beams with a uniaxial polarization analysis; 3) polarized beams with a spherical polarization analysis. For all these scattering methods, we shall give examples of the physical problems which can been solved by these methods, particularly in the field of magnetism: investigation of complex magnetic structures, investigation of spin or magnetization densities in metals, insulators and molecular compounds, separation of magnetic and nuclear scattering, investigation of magnetic properties of liquids and amorphous materials and even, for non magnetic material, separation between coherent and incoherent scattering. (author)

Basicity comparison for di-substituted 4-nitropyridine derivatives in polar non-aqueous media

International Nuclear Information System (INIS)

Gurzynski, Lukasz; Puszko, Aniela; Chmurzynski, Lech

2007-01-01

Acid dissociation, as well as cationic homoconjugation equilibria have been studied potentiometrically in systems involving four di-substituted 4-nitropyridines and conjugate cationic acids in the polar non-aqueous solvents - aprotic protophobic acetonitrile (AN) and propylene carbonate (PC), the amphiprotic methanol (MeOH), and in the aprotic protophilic dimethyl sulfoxide (DMSO). The influence of solvent effect on the obtained acidity constants has been discussed. The acidity constants (expressed as pK a values) were compared with those previously determined in another polar protophobic aprotic solvent - acetone (AC), and obtained for the unsubstituted pyridine (Py). A comparison of the acid dissociation constants determined in all media studied has proved that the strength of the cationic acids increases on going from acetonitrile through propylene carbonate, acetone, and methanol to dimethyl sulfoxide. Furthermore, the values of acidity constants in the non-aqueous media have shown that in all the solvents studied they change according to the substituent effects. It has been also found that substituted 4-nitropyridine derivatives studied exhibit no tendency towards cationic homoconjugation in acetonitrile, propylene carbonate, and methanol and dimethyl sulfoxide. Moreover, it has been demonstrated that the acid dissociation constants determined by potentiometric titration method in all the solutions investigated correlate well with the calculated energy parameters of the protonation reactions in the gaseous phase

Basicity comparison for di-substituted 4-nitropyridine derivatives in polar non-aqueous media

Energy Technology Data Exchange (ETDEWEB)

Gurzynski, Lukasz [Department of General and Inorganic Chemistry, University of Gdansk, Sobieskiego 18, 80-952 Gdansk (Poland); Puszko, Aniela [Department of Organic Chemistry, School of Economics, Wroclaw (Poland); Chmurzynski, Lech [Department of General and Inorganic Chemistry, University of Gdansk, Sobieskiego 18, 80-952 Gdansk (Poland)], E-mail: lech@chemik.chem.univ.gda.pl

2007-12-15

Acid dissociation, as well as cationic homoconjugation equilibria have been studied potentiometrically in systems involving four di-substituted 4-nitropyridines and conjugate cationic acids in the polar non-aqueous solvents - aprotic protophobic acetonitrile (AN) and propylene carbonate (PC), the amphiprotic methanol (MeOH), and in the aprotic protophilic dimethyl sulfoxide (DMSO). The influence of solvent effect on the obtained acidity constants has been discussed. The acidity constants (expressed as pK{sub a} values) were compared with those previously determined in another polar protophobic aprotic solvent - acetone (AC), and obtained for the unsubstituted pyridine (Py). A comparison of the acid dissociation constants determined in all media studied has proved that the strength of the cationic acids increases on going from acetonitrile through propylene carbonate, acetone, and methanol to dimethyl sulfoxide. Furthermore, the values of acidity constants in the non-aqueous media have shown that in all the solvents studied they change according to the substituent effects. It has been also found that substituted 4-nitropyridine derivatives studied exhibit no tendency towards cationic homoconjugation in acetonitrile, propylene carbonate, and methanol and dimethyl sulfoxide. Moreover, it has been demonstrated that the acid dissociation constants determined by potentiometric titration method in all the solutions investigated correlate well with the calculated energy parameters of the protonation reactions in the gaseous phase.

Minimal knotted polygons in cubic lattices

International Nuclear Information System (INIS)

Van Rensburg, E J Janse; Rechnitzer, A

2011-01-01

In this paper we examine numerically the properties of minimal length knotted lattice polygons in the simple cubic, face-centered cubic, and body-centered cubic lattices by sieving minimal length polygons from a data stream of a Monte Carlo algorithm, implemented as described in Aragão de Carvalho and Caracciolo (1983 Phys. Rev. B 27 1635), Aragão de Carvalho et al (1983 Nucl. Phys. B 215 209) and Berg and Foester (1981 Phys. Lett. B 106 323). The entropy, mean writhe, and mean curvature of minimal length polygons are computed (in some cases exactly). While the minimal length and mean curvature are found to be lattice dependent, the mean writhe is found to be only weakly dependent on the lattice type. Comparison of our results to numerical results for the writhe obtained elsewhere (see Janse van Rensburg et al 1999 Contributed to Ideal Knots (Series on Knots and Everything vol 19) ed Stasiak, Katritch and Kauffman (Singapore: World Scientific), Portillo et al 2011 J. Phys. A: Math. Theor. 44 275004) shows that the mean writhe is also insensitive to the length of a knotted polygon. Thus, while these results for the mean writhe and mean absolute writhe at minimal length are not universal, our results demonstrate that these values are quite close the those of long polygons regardless of the underlying lattice and length

Design of a 50/50 splitting ratio non-polarizing beam splitter based on the modal method with fused-silica transmission gratings

Science.gov (United States)

Zhao, Huajun; Yuan, Dairong; Ming, Hai

2011-04-01

The optical design of a beam splitter that has a 50/50 splitting ratio regardless of the polarization is presented. The non-polarizing beam splitter (NPBS) is based on the fused-silica rectangular transmission gratings with high intensity tolerance. The modal method has been used to estimate the effective index of the modes excited in the grating region for TE and TM polarizations. If a phase difference equals an odd multiples of π/2 for the first two modes (i.e. modes 0 and 1), the incident light will be diffracted into the 0 and -1 orders with about 50% and 50% diffraction efficiency for TM and TE polarizations, respectively.

Application of the cubic-plus-association (CPA) equation of state to complex mixtures with aromatic hydrocarbons

DEFF Research Database (Denmark)

Folas, Georgios; Kontogeorgis, Georgios; Michelsen, Michael Locht

2006-01-01

The cubic-plus-association (CPA) equation of state is applied to phase equilibria of mixtures containing alcohols, glycols, water, and aromatic or olefinic hydrocarbons. Previously, CPA has been successfully used for mixtures containing various associating compounds (alcohols, glycols, amines......, organic acids, and water) and aliphatic hydrocarbons. We show in this work that the model can be satisfactorily extended to complex vapor-liquid-liquid equilibria with aromatic or olefinic hydrocarbons. The solvation between aromatics/olefinics and polar compounds is accounted for. This is particularly...... important for mixtures containing water and glycols, but less so for mixtures with alcohols. For water/hydrocarbons, a single binary interaction parameter which accounts for the solvation is fitted to the experimental liquid-liquid equilibria (LLE) data. The interaction parameter of the physical term...

Ion implantation of Cd and Ag into AlN and GaN

CERN Document Server

Miranda, Sérgio M C; Correia, João Guilherme; Vianden, Reiner; Johnston, Karl; Alves, Eduardo; Lorenz, Katharina

2012-01-01

GaN and AlN thin films were implanted with cadmium (Cd) or silver (Ag), to fluences ranging from 1×1013 to 1.7 × 1015 at/cm$^{2}$. The implanted samples were annealed at 950 ºC under flowing nitrogen. While implantation damage could be fully removed for the lowest fluences, for higher fluences the crystal quality was only partially recovered. For the high fluence samples the lattice site location of the ions was studied by Rutherford Backscattering/ channelling (RBS/C). Cd ions are found to be incorporated in substitutional cation sites (Al or Ga) while Ag is slightly displaced from this position. To further investigate the incorporation sites, Perturbed Angular Correlation (PAC) measurements were performed and the electric field gradients at the site of the probe nuclei were determined.

Cubic Pencils and Painlev\\'e Hamiltonians

OpenAIRE

Kajiwara, Kenji; Masuda, Tetsu; Noumi, Masatoshi; Ohta, Yasuhiro; Yamada, Yasuhiko

2004-01-01

We present a simple heuristic method to derive the Painlev\\'e differential equations from the corresponding geometry of rational surafces. We also give a direct relationship between the cubic pencils and Seiberg-Witten curves.

Integrable peakon equations with cubic nonlinearity

International Nuclear Information System (INIS)

Hone, Andrew N W; Wang, J P

2008-01-01

We present a new integrable partial differential equation found by Vladimir Novikov. Like the Camassa-Holm and Degasperis-Procesi equations, this new equation admits peaked soliton (peakon) solutions, but it has nonlinear terms that are cubic, rather than quadratic. We give a matrix Lax pair for V Novikov's equation, and show how it is related by a reciprocal transformation to a negative flow in the Sawada-Kotera hierarchy. Infinitely many conserved quantities are found, as well as a bi-Hamiltonian structure. The latter is used to obtain the Hamiltonian form of the finite-dimensional system for the interaction of N peakons, and the two-body dynamics (N = 2) is explicitly integrated. Finally, all of this is compared with some analogous results for another cubic peakon equation derived by Zhijun Qiao. (fast track communication)

Calculations of and evidence for chain packing stress in inverse lyotropic bicontinuous cubic phases.

Science.gov (United States)

Shearman, Gemma C; Khoo, Bee J; Motherwell, Mary-Lynn; Brakke, Kenneth A; Ces, Oscar; Conn, Charlotte E; Seddon, John M; Templer, Richard H

2007-06-19

Inverse bicontinuous cubic lyotropic phases are a complex solution to the dilemma faced by all self-assembled water-amphiphile systems: how to satisfy the incompatible requirements for uniform interfacial curvature and uniform molecular packing. The solution reached in this case is for the water-amphiphile interfaces to deform hyperbolically onto triply periodic minimal surfaces. We have previously suggested that although the molecular packing in these structures is rather uniform the relative phase behavior of the gyroid, double diamond, and primitive inverse bicontinuous cubic phases can be understood in terms of subtle differences in packing frustration. In this work, we have calculated the packing frustration for these cubics under the constraint that their interfaces have constant mean curvature. We find that the relative packing stress does indeed differ between phases. The gyroid cubic has the least packing stress, and at low water volume fraction, the primitive cubic has the greatest packing stress. However, at very high water volume fraction, the double diamond cubic becomes the structure with the greatest packing stress. We have tested the model in two ways. For a system with a double diamond cubic phase in excess water, the addition of a hydrophobe may release packing frustration and preferentially stabilize the primitive cubic, since this has previously been shown to have lower curvature elastic energy. We have confirmed this prediction by adding the long chain alkane tricosane to 1-monoolein in excess water. The model also predicts that if one were able to hydrate the double diamond cubic to high water volume fractions, one should destabilize the phase with respect to the primitive cubic. We have found that such highly swollen metastable bicontinuous cubic phases can be formed within onion vesicles. Data from monoelaidin in excess water display a well-defined transition, with the primitive cubic appearing above a water volume fraction of 0.75. Both of

Hairy black holes in cubic quasi-topological gravity

Energy Technology Data Exchange (ETDEWEB)

Dykaar, Hannah [Department of Physics and Astronomy, University of Waterloo,200 University Avenue West, Waterloo, ON, N2L 3G1 (Canada); Department of Physics, McGill University,3600 rue University, Montreal, QC, H3A 2T8 (Canada); Hennigar, Robie A.; Mann, Robert B. [Department of Physics and Astronomy, University of Waterloo,200 University Avenue West, Waterloo, ON, N2L 3G1 (Canada)

2017-05-09

We construct a class of five dimensional black hole solutions to cubic quasi-topological gravity with conformal scalar hair and study their thermodynamics. We find these black holes provide the second example of black hole λ-lines: a line of second order (continuous) phase transitions, akin to the fluid/superfluid transition of {sup 4}He. Examples of isolated critical points are found for spherical black holes, marking the first in the literature to date. We also find various novel and interesting phase structures, including an isolated critical point occurring in conjunction with a double reentrant phase transition. The AdS vacua of the theory are studied, finding ghost-free configurations where the scalar field takes on a non-zero constant value, in notable contrast to the five dimensional Lovelock case.

Study of irradiation effects in non-metallic conductors

International Nuclear Information System (INIS)

Atobe, Kozo; Fukuoka, Noboru; Honda, Makoto; Kondo, Tadashi; Morishima, Kouichi; Okada, Moritami; Nakagawa, Masuo

1998-01-01

The production of point defects induced by reactor and the thermal behavior of defects in sintered AlN and c-BN have been investigated using the optical absorption and electron spin resonance (ESR) methods. The absorption band at 370 nm (AlN) and the structureless absorption over the visible region are observed. These specimens also show ESR signals with g-value 2.007 (AlN), 2.006 (BN), which are probably caused by N vacancies with a trapped electron. In addition to these experiments, the difference of the photoluminescence(PL) lines on neutron irradiated CZ-Si and FZ-Si has been also studied. The models of the defect associated with neutron irradiation are discussed. (author)

Explicit Gaussian quadrature rules for C^1 cubic splines with symmetrically stretched knot sequence

KAUST Repository

Ait-Haddou, Rachid

2015-06-19

We provide explicit expressions for quadrature rules on the space of C^1 cubic splines with non-uniform, symmetrically stretched knot sequences. The quadrature nodes and weights are derived via an explicit recursion that avoids an intervention of any numerical solver and the rule is optimal, that is, it requires minimal number of nodes. Numerical experiments validating the theoretical results and the error estimates of the quadrature rules are also presented.

The Combinatorial Rigidity Conjecture is False for Cubic Polynomials

DEFF Research Database (Denmark)

Henriksen, Christian

2003-01-01

We show that there exist two cubic polynomials with connected Julia sets which are combinatorially equivalent but not topologically conjugate on their Julia sets. This disproves a conjecture by McMullen from 1995.......We show that there exist two cubic polynomials with connected Julia sets which are combinatorially equivalent but not topologically conjugate on their Julia sets. This disproves a conjecture by McMullen from 1995....

Recombination dynamics of excitons with low non-radiative component in semi-polar (10-11)-oriented GaN/AlGaN multiple quantum wells

International Nuclear Information System (INIS)

Rosales, D.; Gil, B.; Bretagnon, T.; Guizal, B.; Izyumskaya, N.; Monavarian, M.; Zhang, F.; Okur, S.; Avrutin, V.; Özgür, Ü.; Morkoç, H.

2014-01-01

Optical properties of GaN/Al 0.2 Ga 0.8 N multiple quantum wells grown with semi-polar (10-11) orientation on patterned 7°-off Si (001) substrates have been investigated. Studies performed at 8 K reveal the in-plane anisotropic behavior of the QW photoluminescence (PL) intensity for this semi-polar orientation. The time resolved PL measurements were carried out in the temperature range from 8 to 295 K to deduce the effective recombination decay times, with respective radiative and non-radiative contributions. The non-radiative component remains relatively weak with increasing temperature, indicative of high crystalline quality. The radiative decay time is a consequence of contribution from both localized and free excitons. We report an effective density of interfacial defects of 2.3 × 10 12 cm −2 and a radiative recombination time of τ loc  = 355 ps for the localized excitons. This latter value is significantly larger than those reported for the non-polar structures, which we attribute to the presence of a weak residual electric field in the semi-polar QW layers

Recombination dynamics of excitons with low non-radiative component in semi-polar (10-11)-oriented GaN/AlGaN multiple quantum wells

Energy Technology Data Exchange (ETDEWEB)

Rosales, D.; Gil, B.; Bretagnon, T.; Guizal, B. [CNRS, Laboratoire Charles Coulomb, UMR 5221, F-34095 Montpellier (France); Université Montpellier 2, Laboratoire Charles Coulomb, UMR 5221, F-34095 Montpellier (France); Izyumskaya, N.; Monavarian, M.; Zhang, F.; Okur, S.; Avrutin, V.; Özgür, Ü.; Morkoç, H. [Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23238 (United States)

2014-09-07

Optical properties of GaN/Al{sub 0.2}Ga{sub 0.8}N multiple quantum wells grown with semi-polar (10-11) orientation on patterned 7°-off Si (001) substrates have been investigated. Studies performed at 8 K reveal the in-plane anisotropic behavior of the QW photoluminescence (PL) intensity for this semi-polar orientation. The time resolved PL measurements were carried out in the temperature range from 8 to 295 K to deduce the effective recombination decay times, with respective radiative and non-radiative contributions. The non-radiative component remains relatively weak with increasing temperature, indicative of high crystalline quality. The radiative decay time is a consequence of contribution from both localized and free excitons. We report an effective density of interfacial defects of 2.3 × 10{sup 12} cm{sup −2} and a radiative recombination time of τ{sub loc} = 355 ps for the localized excitons. This latter value is significantly larger than those reported for the non-polar structures, which we attribute to the presence of a weak residual electric field in the semi-polar QW layers.

Emission spectra from AlN and GaN doped with rare earth elements

International Nuclear Information System (INIS)

Choi, Sung Woo; Emura, Shuichi; Kimura, Shigeya; Kim, Moo Seong; Zhou Yikai; Teraguchi, Nobuaki; Suzuki, Akira; Yanase, Akira; Asahi, Hajime

2006-01-01

Luminescent properties of GaN and AlN based semiconductors containing rare earth metals of Gd and Dy are studied. Cathodoluminescent spectra from AlGdN show a clear and sharp peak at 318 nm following LO phonon satellites. Photoluminescence spectra from GaDyN by the above-gap excitation also show several peaks in addition to the broad luminescence band emission. For GaGdN, the sharp PL peaks are also observed at 650 and 670 nm, and they are assigned to the intra-f orbital transitions by their time decay measurements. The broad band at around 365 nm for AlGdN, 505 nm for GaGdN and GaDyN are commonly observed. The origin of these broad bands is discussed

Hierarchical Na-doped cubic ZrO{sub 2} synthesis by a simple hydrothermal route and its application in biodiesel production

Energy Technology Data Exchange (ETDEWEB)

Lara-García, Hugo A.; Romero-Ibarra, Issis C.; Pfeiffer, Heriberto, E-mail: pfeiffer@iim.unam.mx

2014-10-15

Hierarchical growth of cubic ZrO{sub 2} phase was successfully synthesized via a simple hydrothermal process in the presence of different surfactants (cationic, non-ionic and anionic) and sodium hydroxide. The structural and microstructural characterizations of different ZrO{sub 2} powders were performed using various techniques, such as X-ray diffraction, transmission electron microscopy, N{sub 2} adsorption–desorption, scanning electron microscopy and infrared. Results indicated that sodium addition stabilized the cubic ZrO{sub 2} phase by a Na-doping process, independently of the surfactant used. In contrast, microstructural characteristics varied as a function of the surfactant and sodium presence. In addition, water vapor (H{sub 2}O) and carbon dioxide (CO{sub 2}) sorption properties were evaluated on ZrO{sub 2} samples. Results evidenced that sample surface reactivity changed as a function of the sodium content. Finally, this surface reactivity was evaluated on the biodiesel transesterification reaction using the different synthesized samples, obtaining yields of 93%. - Graphical abstract: Hierarchical growth of cubic Na-ZrO{sub 2} phase was synthesized by hydrothermal processes in the presence of surfactants and sodium. Sodium addition stabilized the cubic phase by a Na-doping process, while the microstructural characteristics varied with surfactants. Finally, this surface reactivity was evaluated on the biodiesel transesterification reaction. - Highlights: • Cubic-ZrO{sub 2} phase was synthesized via a simple hydrothermal process. • ZrO{sub 2} structure and microstructures changed as a function of the surfactant. • Cubic-ZrO{sub 2} phase was evaluated on the biodiesel transesterification reaction.

Self-collimating photonic crystal polarization beam splitter.

Science.gov (United States)

Zabelin, V; Dunbar, L A; Le Thomas, N; Houdré, R; Kotlyar, M V; O'Faolain, L; Krauss, T F

2007-03-01

We present theoretical and experimental results of a polarization splitter device that consists of a photonic crystal (PhC) slab, which exhibits a large reflection coefficient for TE and a high transmission coefficient for TM polarization. The slab is embedded in a PhC tile operating in the self-collimation mode. Embedding the polarization-discriminating slab in a PhC with identical lattice symmetry suppresses the in-plane diffraction losses at the PhC-non-PhC interface. The optimization of the PhC-non-PhC interface is thereby decoupled from the optimization of the polarizing function. Transmissions as high as 35% for TM- and 30% for TE-polarized light are reported.

Effect of Ga2O3 addition on the properties of Y2O3-doped AlN ceramics

Directory of Open Access Journals (Sweden)

Shin H.

2015-01-01

Full Text Available Effect Ga2O3 addition on the densification and properties of Y2O3-doped AlN ceramics was investigated under the constraint of total sintering additives (Y2O3 and Ga2O3 of 4.5 wt%. Ga was detected in the AlN grain as well as the grain boundary phases. YAlO3 and Y4Al2O9 were observed as the secondary crystalline phases in all of the investigated compositions. As the substitution of Ga2O3 for Y2O3 increased, the quantity of the Y4Al2O9 phase decreased while that of YAlO3 was more or less similar. Neither additional secondary phases was identified, nor was the sinterability inhibited by the Ga2O3 addition; the linear shrinkage and apparent density were above 20 percent and 3.34-3.37 g/cm3, respectively. However, the optical reflectance and the elastic modulus generally decreased whereas the Poisson ratio increased significantly. The dielectric constant and the loss tangent of 4.0Y2O3-0.5Ga2O3-95.5Y2O3 at the resonant frequency of 8.22 GHz were 8.63 and 0.003, respectively.

Comparison of the sampling rates and partitioning behaviour of polar and non-polar contaminants in the polar organic chemical integrative sampler and a monophasic mixed polymer sampler for application as an equilibrium passive sampler.

Science.gov (United States)

Jeong, Yoonah; Schäffer, Andreas; Smith, Kilian

2018-06-15

In this work, Oasis HLB® beads were embedded in a silicone matrix to make a single phase passive sampler with a higher affinity for polar and ionisable compounds than silicone alone. The applicability of this mixed polymer sampler (MPS) was investigated for 34 aquatic contaminants (log K OW -0.03 to 6.26) in batch experiments. The influence of flow was investigated by comparing uptake under static and stirred conditions. The sampler characteristics of the MPS was assessed in terms of sampling rates (R S ) and sampler-water partition coefficients (K SW ), and these were compared to those of the polar organic chemical integrative sampler (POCIS) as a reference kinetic passive sampler. The MPS was characterized as an equilibrium sampler for both polar and non-polar compounds, with faster uptake rates and a shorter time to reach equilibrium than the POCIS. Water flow rate impacted sampling rates by up to a factor of 12 when comparing static and stirred conditions. In addition, the relative accumulation of compounds in the polyethersulfone (PES) membranes versus the inner Oasis HLB sorbent was compared for the POCIS, and ranged from <1% to 83% depending on the analyte properties. This is indicative of a potentially significant lag-phase for less polar compounds within POCIS. The findings of this study can be used to quantitatively describe the partitioning and kinetic behaviour of MPS and POCIS for a range of aquatic organic contaminants for application in field sampling. Copyright © 2018 Elsevier B.V. All rights reserved.

Some elements go cubic under pressure

Czech Academy of Sciences Publication Activity Database

Legut, Dominik

2007-01-01

Roč. 60, č. 10 (2007), s. 17-17 ISSN 0031-9228 Institutional research plan: CEZ:AV0Z20410507 Keywords : ab initio * polonium * cubic structure Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 5.133, year: 2007

Trace spaces in a pre-cubical complex

DEFF Research Database (Denmark)

Raussen, Martin

2009-01-01

In directed algebraic topology, directed irreversible (d)-paths and spaces consisting of d-paths are studied from a topological and from a categorical point of view. Motivated by models for concurrent computation, we study in this paper spaces of d-paths in a pre-cubical complex. Such paths...... are equipped with a natural arc length which moreover is shown to be invariant under directed homotopies. D-paths up to reparametrization (called traces) can thus be represented by arc length parametrized d-paths. Under weak additional conditions, it is shown that trace spaces in a pre-cubical complex...... are separable metric spaces which are locally contractible and locally compact. Moreover, they have the homotopy type of a CW-complex....

First-principles investigation of CO adsorption on pristine, C-doped and N-vacancy defected hexagonal AlN nanosheets

Science.gov (United States)

Ouyang, Tianhong; Qian, Zhao; Ahuja, Rajeev; Liu, Xiangfa

2018-05-01

The optimized atomic structures, energetics and electronic structures of toxic gas CO adsorption systems on pristine, C-doped and N-vacancy defected h-AlN nanosheets respectively have been investigated using Density functional theory (DFT-D2 method) to explore their potential gas detection or sensing capabilities. It is found that both the C-doping and the N-vacancy defect improve the CO adsorption energies of AlN nanosheet (from pure -3.847 eV to -5.192 eV and -4.959 eV). The absolute value of the system band gap change induced by adsorption of CO can be scaled up to 2.558 eV or 1.296 eV after C-doping or N-vacancy design respectively, which is evidently larger than the value of 0.350 eV for pristine material and will benefit the robustness of electronic signals in potential gas detection. Charge transfer mechanisms between CO and the AlN nanosheet have been presented by the Bader charge and differential charge density analysis to explore the deep origin of the underlying electronic structure changes. This theoretical study is proposed to predict and understand the CO adsorption properties of the pristine and defected h-AlN nanosheets and would help to guide experimentalists to develop better AlN-based two-dimensional materials for efficient gas detection or sensing applications in the future.

The planar cubic Cayley graphs

CERN Document Server

Georgakopoulos, Agelos

2018-01-01

The author obtains a complete description of the planar cubic Cayley graphs, providing an explicit presentation and embedding for each of them. This turns out to be a rich class, comprising several infinite families. He obtains counterexamples to conjectures of Mohar, Bonnington and Watkins. The author's analysis makes the involved graphs accessible to computation, corroborating a conjecture of Droms.

Black holes in a cubic Galileon universe

Energy Technology Data Exchange (ETDEWEB)

Babichev, E.; Charmousis, C.; Lehébel, A.; Moskalets, T., E-mail: eugeny.babichev@th.u-psud.fr, E-mail: christos.charmousis@th.u-psud.fr, E-mail: antoine.lehebel@th.u-psud.fr, E-mail: tetiana.moskalets@th.u-psud.fr [Laboratoire de Physique Théorique, CNRS, Univ. Paris-Sud, Université Paris-Saclay, 91405 Orsay (France)

2016-09-01

We find and study the properties of black hole solutions for a subclass of Horndeski theory including the cubic Galileon term. The theory under study has shift symmetry but not reflection symmetry for the scalar field. The Galileon is assumed to have linear time dependence characterized by a velocity parameter. We give analytic 3-dimensional solutions that are akin to the BTZ solutions but with a non-trivial scalar field that modifies the effective cosmological constant. We then study the 4-dimensional asymptotically flat and de Sitter solutions. The latter present three different branches according to their effective cosmological constant. For two of these branches, we find families of black hole solutions, parametrized by the velocity of the scalar field. These spherically symmetric solutions, obtained numerically, are different from GR solutions close to the black hole event horizon, while they have the same de-Sitter asymptotic behavior. The velocity parameter represents black hole primary hair.

Topological Oxide Insulator in Cubic Perovskite Structure

Science.gov (United States)

Jin, Hosub; Rhim, Sonny H.; Im, Jino; Freeman, Arthur J.

2013-01-01

The emergence of topologically protected conducting states with the chiral spin texture is the most prominent feature at the surface of topological insulators. On the application side, large band gap and high resistivity to distinguish surface from bulk degrees of freedom should be guaranteed for the full usage of the surface states. Here, we suggest that the oxide cubic perovskite YBiO3, more than just an oxide, defines itself as a new three-dimensional topological insulator exhibiting both a large bulk band gap and a high resistivity. Based on first-principles calculations varying the spin-orbit coupling strength, the non-trivial band topology of YBiO3 is investigated, where the spin-orbit coupling of the Bi 6p orbital plays a crucial role. Taking the exquisite synthesis techniques in oxide electronics into account, YBiO3 can also be used to provide various interface configurations hosting exotic topological phenomena combined with other quantum phases. PMID:23575973

X-ray diffraction study of A- plane non-polar InN epilayer grown by MOCVD

Science.gov (United States)

Moret, Matthieu; Briot, Olivier; Gil, Bernard

2015-03-01

Strong polarisation-induced electric fields in C-plane oriented nitrides semiconductor layers reduce the performance of devices. Eliminating the polarization fields can be achieved by growing nitrides along non polar direction. We have grown non polar A-plane oriented InN on R-plane (1‾102) nitridated sapphire substrate by MOCVD. We have studied the structural anisotropy observed in these layers by analyzing High Resolution XRay Diffraction rocking curve (RC) experiments as a function of the in-plane beam orientation. A-plane InN epilayer have a unique epitaxial relationship on R-Plane sapphire and show a strong structural anisotropy. Full width at half maximum (FWHM) of the InN(11‾20) XRD RC values are contained between 44 and 81 Arcmin. FWHM is smaller when the diffraction occurs along the [0001] and the largest FWHM values, of the (11‾20) RC, are obtained when the diffraction occurs along the [1‾100] in-plane direction. Atomic Force Microscopy imaging revealed morphologies with well organized crystallites. The grains are structured along a unique crystallographic orientation of InN, leading to larger domains in this direction. This structural anisotropy can be, in first approximation, attributed to the difference in the domain sizes observed. XRD reciprocal space mappings (RSM) were performed in asymmetrical configuration on (13‾40) and (2‾202) diffraction plane. RSM are measured with a beam orientation corresponding to a maximal and a minimal width of the (11‾20) Rocking curves, respectively. A simple theoretical model is exposed to interpret the RSM. We concluded that the dominant contribution to the anisotropy is due to the scattering coherence length anisotropy present in our samples.

Errors and corrections in the separation of spin-flip and non-spin-flip thermal neutron scattering using the polarization analysis technique

International Nuclear Information System (INIS)

Williams, W.G.

1975-01-01

The use of the polarization analysis technique to separate spin-flip from non-spin-flip thermal neutron scattering is especially important in determining magnetic scattering cross-sections. In order to identify a spin-flip ratio in the scattering with a particular scattering process, it is necessary to correct the experimentally observed 'flipping-ratio' to allow for the efficiencies of the vital instrument components (polarizers and spin-flippers), as well as multiple scattering effects in the sample. Analytical expressions for these corections are presented and their magnitudes in typical cases estimated. The errors in measurement depend strongly on the uncertainties in the calibration of the efficiencies of the polarizers and the spin-flipper. The final section is devoted to a discussion of polarization analysis instruments

The relationship between the hardness and the point-defect-density in neutron-irradiated MgO·3.0Al2O3 and AlN

International Nuclear Information System (INIS)

Suematsu, H.; Yatsui, K.; Yano, T.

2001-01-01

MgO·3.0Al 2 O 3 single crystals and sintered AlN polycrystals were irradiated with fast neutrons in various conditions and the hardness of the irradiated and unirradiated samples was measured with a Vickers hardness tester. The hardness of as-irradiated MgO·3.0Al 2 O 3 and AlN samples increased by 23 and 51%, respectively. After isochronal annealing, the hardness gradually decreased and mostly recovered to that of the unirradiated one up to 1400degC. Volume of the sample also increased after the irradiation and changed in the same way as the hardness by annealing. A relationship between the hardness and the density of point defects is proposed and the experimental results agree with the relationship. It implies that the point defects generated by the irradiation pin down dislocations and increase the hardness of neutron irradiated MgO·3.0Al 2 O 3 samples. (author)

Antidiabetic, cytotoxic, antioxidant and antitrematodal medicinal efficacy of polar and non-polar phytochemicals of Balanites aegyptiaca Del.

Directory of Open Access Journals (Sweden)

Hanan Abd Al-Hay Saied Al-Ashaal

2017-11-01

Full Text Available Objective: To investigate the biological activities of polar and non-polar extracts of Balanites aegyptiaca fruits. Methods: Antihyperglycemic activity using alloxan induced diabetic rats was evaluated. In vitro cytotoxicity against human carcinoma cell lines activity in addition to antioxidant and antitrematodal effects were investigated. Phytochemicals were determined using chromatographic and spectral analyses including TLC, GC and LC/MS/MS methods. Results: The reduction in blood glucose level reached 64.13%, 69.07% and 77.01% for hexane, chloroform and methanol extract, respectively. Isolated organs and histopathological examination illustrated improvement in treated animal's pancreas which is the master gland in controlling glucose level. The highest in vitro free radical scavenging capacity was achieved by chloroform extract (75.72%. Meanwhile, hexane and methanol extracts exhibited 44.01% and 41.77% scavenging capacity, respectively. Cytotoxic activity against human carcinoma cell lines illustrated efficacious influence against brain, liver, lung, breast and lymphoblastic leukemia cell lines. Brain cell line was the most susceptible cell line by both chloroform and methanol extracts. In vitro antitrematodal effectiveness showed that 100% mortality of Schistosoma worms was induced at the 3rd and 5th days for methanol and chloroform extracts. Meanwhile, both extracts exhibited antifasciolosis activity with LC50 of 63.19 and 55.15 mg/L, respectively. Conclusions: The current results illustrated that Balanites aegyptiaca phytochemicals induced potent hypoglycemic activity and potent to moderate antioxidant and cytotoxic effects. Chloroform and methanol extracts were found to have antitrematodal efficacy against Schistosoma mansoni and Fasciola gigantica hepatic worms.

Enhancement of molecular NMR signal induced by polarization transfer from laser-polarized 129Xe

International Nuclear Information System (INIS)

Sun Xianping

2001-01-01

There is a large non-equilibrium nuclear polarization and a longer relaxation time in the laser-polarized 129 Xe produced by means of optical pumping and spin exchange. The characteristics of the laser-polarized 129 Xe permit the transfer of the polarization to enhance the atomic nuclear spin in liquid, solid and surface of solid molecules. Therefore, the sensitivity in nuclear magnetic resonance measurements for the molecules is enhanced and applications in the investigations of materials and surface sciences are expanded. The progress in the investigations of materials and surface sciences are expanded. The progress in the investigations of the polarization transfer between laser-polarized 129 Xe and the atomic nuclei in the molecules, the relative physics and the measurement of some parameters are introduced