WorldWideScience

Sample records for non-polar cubic aln

  1. Mechanical and Thermophysical Properties of Cubic Rock-Salt AlN Under High Pressure

    Science.gov (United States)

    Lebga, Noudjoud; Daoud, Salah; Sun, Xiao-Wei; Bioud, Nadhira; Latreche, Abdelhakim

    2018-03-01

    Density functional theory, density functional perturbation theory, and the Debye model have been used to investigate the structural, elastic, sound velocity, and thermodynamic properties of AlN with cubic rock-salt structure under high pressure, yielding the equilibrium structural parameters, equation of state, and elastic constants of this interesting material. The isotropic shear modulus, Pugh ratio, and Poisson's ratio were also investigated carefully. In addition, the longitudinal, transverse, and average elastic wave velocities, phonon contribution to the thermal conductivity, and interesting thermodynamic properties were predicted and analyzed in detail. The results demonstrate that the behavior of the elastic wave velocities under increasing hydrostatic pressure explains the hardening of the corresponding phonons. Based on the elastic stability criteria under pressure, it is found that AlN with cubic rock-salt structure is mechanically stable, even at pressures up to 100 GPa. Analysis of the Pugh ratio and Poisson's ratio revealed that AlN with cubic rock-salt structure behaves in brittle manner.

  2. Ti, Al and N adatom adsorption and diffusion on rocksalt cubic AlN (001) and (011) surfaces: Ab initio calculations

    Science.gov (United States)

    Mastail, C.; David, M.; Nita, F.; Michel, A.; Abadias, G.

    2017-11-01

    We use ab initio calculations to determine the preferred nucleation sites and migration pathways of Ti, Al and N adatoms on cubic NaCl-structure (B1) AlN surfaces, primary inputs towards a further thin film growth modelling of the TiAlN alloy system. The potential energy landscape is mapped out for both metallic species and nitrogen adatoms for two different AlN surface orientations, (001) and (110), using density functional theory. For all species, the adsorption energies on AlN(011) surface are larger than on AlN(001) surface. Ti and Al adatom adsorption energy landscapes determined at 0 K by ab initio show similar features, with stable binding sites being located in, or near, epitaxial surface positions, with Ti showing a stronger binding compared to Al. In direct contrast, N adatoms (Nad) adsorb preferentially close to N surface atoms (Nsurf), thus forming strong N2-molecule-like bonds on both AlN(001) and (011). Similar to N2 desorption mechanisms reported for other cubic transition metal nitride surfaces, in the present work we investigate Nad/Nsurf desorption on AlN(011) using a drag calculation method. We show that this process leaves a Nsurf vacancy accompanied with a spontaneous surface reconstruction, highlighting faceting formation during growth.

  3. Epitaxial growth of AlN on single crystal Mo substrates

    International Nuclear Information System (INIS)

    Okamoto, Koichiro; Inoue, Shigeru; Nakano, Takayuki; Kim, Tae-Won; Oshima, Masaharu; Fujioka, Hiroshi

    2008-01-01

    We have grown AlN films on single-crystalline Mo(110), (100), and (111) substrates using a low temperature pulsed laser deposition (PLD) growth technique and investigated their structural properties. Although c-axis oriented AlN films grow on Mo(100), the films contain 30 o rotated domains due to the difference in the rotational symmetry between AlN(0001) and Mo(100). AlN films with only poor crystalline quality grow on Mo(111) substrates, probably due to the poor surface morphology and high reactivity of the substrates. On the other hand, single crystal AlN films grow epitaxially on Mo(110) substrates with an in-plane relationship of AlN[11-20] // Mo[001]. Reflection high-energy electron diffraction or electron backscattered diffraction analysis has revealed that neither in-plane 30 deg. rotated domains nor cubic phase domains exist in the AlN films. X-ray reflectivity measurements have revealed that the heterointerface between AlN and Mo prepared by PLD at 450 deg. C is quite abrupt. These results indicate that PLD epitaxial growth of AlN on single crystal Mo substrates is quite promising for the fabrication of future high frequency filter devices

  4. Epitaxial growth of AlN on single crystal Mo substrates

    Energy Technology Data Exchange (ETDEWEB)

    Okamoto, Koichiro; Inoue, Shigeru [Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo, 153-8505 (Japan); Nakano, Takayuki; Kim, Tae-Won [Kanagawa Academy of Science and Technology (KAST) KSP east 301, 3-2-1 Sakado, Takatsu-ku, Kawasaki, Kanagawa, 213-0012 (Japan); Oshima, Masaharu [Department of Applied Chemistry, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656 (Japan); Fujioka, Hiroshi [Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo, 153-8505 (Japan); Kanagawa Academy of Science and Technology (KAST) KSP east 301, 3-2-1 Sakado, Takatsu-ku, Kawasaki, Kanagawa, 213-0012 (Japan)], E-mail: hfujioka@iis.u-tokyo.ac.jp

    2008-06-02

    We have grown AlN films on single-crystalline Mo(110), (100), and (111) substrates using a low temperature pulsed laser deposition (PLD) growth technique and investigated their structural properties. Although c-axis oriented AlN films grow on Mo(100), the films contain 30{sup o} rotated domains due to the difference in the rotational symmetry between AlN(0001) and Mo(100). AlN films with only poor crystalline quality grow on Mo(111) substrates, probably due to the poor surface morphology and high reactivity of the substrates. On the other hand, single crystal AlN films grow epitaxially on Mo(110) substrates with an in-plane relationship of AlN[11-20] // Mo[001]. Reflection high-energy electron diffraction or electron backscattered diffraction analysis has revealed that neither in-plane 30 deg. rotated domains nor cubic phase domains exist in the AlN films. X-ray reflectivity measurements have revealed that the heterointerface between AlN and Mo prepared by PLD at 450 deg. C is quite abrupt. These results indicate that PLD epitaxial growth of AlN on single crystal Mo substrates is quite promising for the fabrication of future high frequency filter devices.

  5. First-principles molecular dynamics investigation of thermal and mechanical stability of the TiN(001)/AlN and ZrN(001)/AlN heterostructures

    International Nuclear Information System (INIS)

    Ivashchenko, V.I.; Veprek, S.; Turchi, P.E.A.; Shevchenko, V.I.; Leszczynski, J.; Gorb, L.; Hill, F.

    2014-01-01

    First-principles quantum molecular dynamics investigations of TiN(001)/AlN and ZrN(001)/AlN heterostructures with one and two monolayers (1 ML and 2 ML) of AlN interfacial layers were carried out in the temperature range of 0–1400 K with subsequent static relaxation. It is shown that the epitaxially stabilized cubic B1-AlN interfacial layers are preserved in all TiN(001)/AlN heterostructures over the whole temperature range. In the ZrN(001)/AlN heterostructures, the B1-AlN(001) interfacial layer exists at 0 K, but it transforms into a distorted one at 10 K consisting of tetrahedral AlN 4 , octahedral AlN 6 , and AlN 5 units. The thermal stability of the interfaces was investigated by studying the phonon dynamic stability of the B1-AlN phase with different lattice parameters. The calculations showed that the B1-AlN interface should be unstable in ZrN(001)/AlN heterostructures and nanocomposites, and in those based on transition metal nitrides with lattice parameters larger than 4.4 Å. Electronic band structure calculations showed that energy gap forms around the Fermi energy for all interfaces. The formation of the interfacial AlN layer in TiN and ZrN crystals reduces their ideal tensile and shear strengths. Upon tensile load, decohesion occurs between Ti (Zr) and N atoms adjacent to the 1 ML AlN interfacial layer, whereas in the case of 2 ML AlN it occurs inside the TiN and ZrN slabs. The experimentally reported strength enhancement in the TiN/AlN and ZrN/AlN heterostructures is attributed to impeding effect of the interfacial layer on the plastic flow. - Highlights: • First-principles quantum molecular dynamics studies were conducted. • TiN- and ZrN-based heterostructures with one and two AlN interfacial layers. • Stability and structural transformation between 0 and 1400 K have been calculated. • Stress–strain relationships and ideal strengths determined. • Systems which may form stable superhard heterostructures are identified

  6. EDITORIAL: Non-polar and semipolar nitride semiconductors Non-polar and semipolar nitride semiconductors

    Science.gov (United States)

    Han, Jung; Kneissl, Michael

    2012-02-01

    Throughout the history of group-III-nitride materials and devices, scientific breakthroughs and technological advances have gone hand-in-hand. In the late 1980s and early 1990s, the discovery of the nucleation of smooth (0001) GaN films on c-plane sapphire and the activation of p-dopants in GaN led very quickly to the realization of high-brightness blue and green LEDs, followed by the first demonstration of GaN-based violet laser diodes in the mid 1990s. Today, blue InGaN LEDs boast record external quantum efficiencies exceeding 80% and the emission wavelength of the InGaN-based laser diode has been pushed into the green spectral range. Although these tremenduous advances have already spurred multi-billion dollar industries, there are still a number of scientific questions and technological issues that are unanswered. One key challenge is related to the polar nature of the III-nitride wurtzite crystal. Until a decade ago all research activities had almost exclusively concentrated on (0001)-oriented polar GaN layers and heterostructures. Although the device characteristics seem excellent, the strong polarization fields at GaN heterointerfaces can lead to a significant deterioration of the device performance. Triggered by the first demonstration non-polar GaN quantum wells grown on LiAlO2 by Waltereit and colleagues in 2000, impressive advances in the area of non-polar and semipolar nitride semiconductors and devices have been achieved. Today, a large variety of heterostructures free of polarization fields and exhibiting exceptional electronic and optical properties have been demonstrated, and the fundamental understanding of polar, semipolar and non-polar nitrides has made significant leaps forward. The contributions in this Semiconductor Science and Technology special issue on non-polar and semipolar nitride semiconductors provide an impressive and up-to-date cross-section of all areas of research and device physics in this field. The articles cover a wide range of

  7. Electronic structures, elastic properties, and minimum thermal conductivities of cermet M{sub 3}AlN

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jin [Faculty of Materials and Energy, Southwest University, Chongqing 400715 (China); Key Laboratory of Liquid–Solid Structural Evolution and Processing of Materials, Ministry of Education, Shandong University, Jinan 250061 (China); Chen, ZhiQian, E-mail: chen_zq@swu.edu.cn [Faculty of Materials and Energy, Southwest University, Chongqing 400715 (China); Li, ChunMei; Li, Feng; Nie, ChaoYin [Faculty of Materials and Energy, Southwest University, Chongqing 400715 (China)

    2014-08-15

    The electronic structures and elastic anisotropies of cubic Ti{sub 3}AlN, Zr{sub 3}AlN, and Hf{sub 3}AlN are investigated by pseudopotential plane-wave method based on density functional theory. At the Fermi level, the electronic structures of these compounds are successive with no energy gap between conduct and valence bands, and exhibit metallicity in ground states. In valence band of each partial density of states, the different orbital electrons indicate interaction of corresponding atoms. In addition, the anisotropy of Hf{sub 3}AlN is found to be significantly different from that of Ti{sub 3}AlN and Zr{sub 3}AlN, which involve the differences in the bonding strength. It is notable that Hf{sub 3}AlN is a desired thermal barrier material with the lowest thermal conductivity at high temperature among the three compounds. - Graphical abstract: 1.Young's moduli of anti-perovskite Ti{sub 3}AlN, Zr{sub 3}AlN, and Hf{sub 3}AlN in full space. 2.Electron density differences on crystal planes (1 0 0), (2 0 0), and (1 1 0) of anti-perovskite Zr{sub 3}AlN. - Highlights: • We calculated three anti-perovskite cermets with first-principles theory. • We illustrated 3D Young modulus and found the anomalous anisotropy. • We explained the anomaly and calculated the minimum thermal conductivities.

  8. First-principles molecular dynamics investigation of thermal and mechanical stability of the TiN(001)/AlN and ZrN(001)/AlN heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Ivashchenko, V.I., E-mail: ivash@ipms.kiev.ua [Institute of Problems of Material Science, National Academy of Science of Ukraine, Krzhyzhanosky str. 3, 03142 Kyiv (Ukraine); Veprek, S., E-mail: stan.veprek@lrz.tum.de [Department of Chemistry, Technical University Munich, Lichtenbergstrasse 4, D-85747 Garching (Germany); Turchi, P.E.A. [Lawrence Livermore National Laboratory (L-352), P.O. Box 808, Livermore, CA 94551 (United States); Shevchenko, V.I. [Institute of Problems of Material Science, National Academy of Science of Ukraine, Krzhyzhanosky str. 3, 03142 Kyiv (Ukraine); Leszczynski, J. [Department of Chemistry and Biochemistry, Interdisciplinary Center for Nanotoxicity, Jackson State University, Jackson, MS 39217 (United States); Gorb, L. [Department of Chemistry and Biochemistry, Interdisciplinary Center for Nanotoxicity, Jackson State University, Jackson, MS 39217 (United States); U.S. Army ERDC, Vicksburg, MS 39180 (United States); Hill, F. [U.S. Army ERDC, Vicksburg, MS 39180 (United States)

    2014-08-01

    First-principles quantum molecular dynamics investigations of TiN(001)/AlN and ZrN(001)/AlN heterostructures with one and two monolayers (1 ML and 2 ML) of AlN interfacial layers were carried out in the temperature range of 0–1400 K with subsequent static relaxation. It is shown that the epitaxially stabilized cubic B1-AlN interfacial layers are preserved in all TiN(001)/AlN heterostructures over the whole temperature range. In the ZrN(001)/AlN heterostructures, the B1-AlN(001) interfacial layer exists at 0 K, but it transforms into a distorted one at 10 K consisting of tetrahedral AlN{sub 4}, octahedral AlN{sub 6}, and AlN{sub 5} units. The thermal stability of the interfaces was investigated by studying the phonon dynamic stability of the B1-AlN phase with different lattice parameters. The calculations showed that the B1-AlN interface should be unstable in ZrN(001)/AlN heterostructures and nanocomposites, and in those based on transition metal nitrides with lattice parameters larger than 4.4 Å. Electronic band structure calculations showed that energy gap forms around the Fermi energy for all interfaces. The formation of the interfacial AlN layer in TiN and ZrN crystals reduces their ideal tensile and shear strengths. Upon tensile load, decohesion occurs between Ti (Zr) and N atoms adjacent to the 1 ML AlN interfacial layer, whereas in the case of 2 ML AlN it occurs inside the TiN and ZrN slabs. The experimentally reported strength enhancement in the TiN/AlN and ZrN/AlN heterostructures is attributed to impeding effect of the interfacial layer on the plastic flow. - Highlights: • First-principles quantum molecular dynamics studies were conducted. • TiN- and ZrN-based heterostructures with one and two AlN interfacial layers. • Stability and structural transformation between 0 and 1400 K have been calculated. • Stress–strain relationships and ideal strengths determined. • Systems which may form stable superhard heterostructures are identified.

  9. Surface acoustic wave devices on AlN/3C–SiC/Si multilayer structures

    International Nuclear Information System (INIS)

    Lin, Chih-Ming; Lien, Wei-Cheng; Riekkinen, Tommi; Senesky, Debbie G; Pisano, Albert P; Chen, Yung-Yu; Felmetsger, Valery V

    2013-01-01

    Surface acoustic wave (SAW) propagation characteristics in a multilayer structure including a piezoelectric aluminum nitride (AlN) thin film and an epitaxial cubic silicon carbide (3C–SiC) layer on a silicon (Si) substrate are investigated by theoretical calculation in this work. Alternating current (ac) reactive magnetron sputtering was used to deposit highly c-axis-oriented AlN thin films, showing the full width at half maximum (FWHM) of the rocking curve of 1.36° on epitaxial 3C–SiC layers on Si substrates. In addition, conventional two-port SAW devices were fabricated on the AlN/3C–SiC/Si multilayer structure and SAW propagation properties in the multilayer structure were experimentally investigated. The surface wave in the AlN/3C–SiC/Si multilayer structure exhibits a phase velocity of 5528 m s −1 and an electromechanical coupling coefficient of 0.42%. The results demonstrate the potential of AlN thin films grown on epitaxial 3C–SiC layers to create layered SAW devices with higher phase velocities and larger electromechanical coupling coefficients than SAW devices on an AlN/Si multilayer structure. Moreover, the FWHM values of rocking curves of the AlN thin film and 3C–SiC layer remained constant after annealing for 500 h at 540 °C in air atmosphere. Accordingly, the layered SAW devices based on AlN thin films and 3C–SiC layers are applicable to timing and sensing applications in harsh environments. (paper)

  10. Nonpolar a-plane GaN grown on r-plane sapphire using multilayer AlN buffer by metalorganic chemical vapor deposition

    International Nuclear Information System (INIS)

    Chiang, C.H.; Chen, K.M.; Wu, Y.H.; Yeh, Y.S.; Lee, W.I.; Chen, J.F.; Lin, K.L.; Hsiao, Y.L.; Huang, W.C.; Chang, E.Y.

    2011-01-01

    Mirror-like and pit-free non-polar a-plane (1 1 -2 0) GaN films are grown on r-plane (1 -1 0 2) sapphire substrates using metalorganic chemical vapor deposition (MOCVD) with multilayer high-low-high temperature AlN buffer layers. The buffer layer structure and film quality are essential to the growth of a flat, crack-free and pit-free a-plane GaN film. The multilayer AlN buffer structure includes a thin low-temperature-deposited AlN (LT-AlN) layer inserted into the high-temperature-deposited AlN (HT-AlN) layer. The results demonstrate that the multilayer AlN buffer structure can improve the surface morphology of the upper a-plane GaN film. The grown multilayer AlN buffer structure reduced the tensile stress on the AlN buffer layers and increased the compressive stress on the a-plane GaN film. The multilayer AlN buffer structure markedly improves the surface morphology of the a-plane GaN film, as revealed by scanning electron microscopy. The effects of various growth V/III ratios was investigated to obtain a-plane GaN films with better surface morphology. The mean roughness of the surface was 1.02 nm, as revealed by atomic force microscopy. Accordingly, the multilayer AlN buffer structure improves the surface morphology and facilitates the complete coalescence of the a-plane GaN layer.

  11. Lattice stability of metastable AlN and wurtzite-to-rock-salt structural transformation by CALPHAD modeling

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yanhui, E-mail: yanhui.z@hotmail.com [Karlsruhe Institute of Technology (KIT), Institute for Applied Materials-Applied Materials Physics (IAM-AWP), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); High-performance Ceramics Division, Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016, Shenyang (China); Franke, Peter; Li, Dajian; Seifert, Hans Jürgen [Karlsruhe Institute of Technology (KIT), Institute for Applied Materials-Applied Materials Physics (IAM-AWP), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany)

    2016-12-01

    Reliable lattice stability of cubic AlN with rock-salt structure (rs-AlN) is the prerequisite of accurate thermodynamic modeling of cubic (M, Al)N solid solutions (M = Ti, Zr, Cr etc.). In order to derive the Gibbs energy of metastable rs-AlN, and then its lattice stability, we did the pressure-temperature (P-T) assessment of AlN phases by equations-of-state modeling. Meanwhile, the molar volumes and the heat capacities of wurtzite and rock-salt AlN, as well as the wurtzite-to-rock-salt structural transition at high P&T were successfully incorporated in CALPHAD-type database by integrating thermodynamic data from experiments and ab-initio calculations. These results promise subsequent investigations on phase stabilities and transitions of solid solutions with AlN component and the development of novel multicomponent coatings. - Highlights: • Phase stability investigation for novel multi-component metastable coatings. • Structural transition at high temperature and high pressure. • Integrating thermodynamic data from ab-initio calculations and experiments. • Thermal expansion, isothermal compressibility and heat capacity of w-AlN and rs-AlN.

  12. The extraordinary role of the AlN interlayer in growth of AlN sputtered on Ti electrodes

    NARCIS (Netherlands)

    Tran, Tuan; Pandraud, G.; Tichelaar, F.D.; Nguyen, Duc Minh; Schellevis, H.; Sarro, P.M.

    2013-01-01

    The structure of AlN layers grown on Ti with and without an AlN interlayer between the Si substrate and the Ti layer is investigated. The AlN grains take over the orientation of the Ti columnar grains in both cases. Surprisingly, the Ti grains do not take over completely the orientations of the AlN

  13. Photonic Crystal Polarizing and Non-Polarizing Beam Splitters

    International Nuclear Information System (INIS)

    Chun-Ying, Guan; Jin-Hui, Shi; Li-Boo, Yuan

    2008-01-01

    A polarizing beam splitter (PBS) and a non-polarizing beam splitter (NPBS) based on a photonic crystal (PC) directional coupler are demonstrated. The photonic crystal directional coupler consists of a hexagonal lattice of dielectric pillars in air and has a complete photonic band gap. The photonic band structure and the band gap map are calculated using the plane wave expansion (PWE) method. The splitting properties of the splitter are investigated numerically using the finite difference time domain (FDTD) method

  14. Impact of the AlN seeding layer thickness on GaN orientation on high index Si-substrates

    Energy Technology Data Exchange (ETDEWEB)

    Ravash, Roghaiyeh; Blaesing, Juergen; Veit, Peter; Hempel, Thomas; Dadgar, Armin; Christen, Juergen; Krost, Alois [Otto-von-Guericke-University Magdeburg (Germany). FNW/IEP/AHE

    2010-07-01

    Silicon is considered to be a reasonable alternative to substrates such as sapphire and SiC, because of its low price and availability in large diameters. Because of spontaneous and strain induced piezoelectric polarization field along the c-axis, leading to the separation of electrons and holes in quantum wells reducing the recombination efficiency, c-axis oriented GaN-based light emitters have a low efficiency, especially in the longer wavelength region. In order to reduce or eliminate these polarization effects, semi-polar or non-polar GaN-heterostructure is favored. In this work we investigated the growth of GaN applying a low temperature AlN seeding layer with various thicknesses. The impact of the AlN seeding layer on GaN orientation using different Si substrate orientations (e. g. (211), (711), (410), (100)+4.5 off) were investigated by x-ray diffraction measurements in Bragg-Brentano geometry and X-ray pole figure measurements. We found that the thickness of the AlN seeding layer plays a significant role in obtaining different GaN textures. Applying a about 4 nm AlN seeding layer we achieved a single crystalline GaN epilayer on Si (211) with a 18 tilted c-axis orientation. Some of the samples were characterized by scanning electron microscopy and transmission electron microscopy.

  15. In Situ Fabrication of AlN Coating by Reactive Plasma Spraying of Al/AlN Powder

    Directory of Open Access Journals (Sweden)

    Mohammed Shahien

    2011-10-01

    Full Text Available Reactive plasma spraying is a promising technology for the in situ formation of aluminum nitride (AlN coatings. Recently, it became possible to fabricate cubic-AlN-(c-AlN based coatings through reactive plasma spraying of Al powder in an ambient atmosphere. However, it was difficult to fabricate a coating with high AlN content and suitable thickness due to the coalescence of the Al particles. In this study, the influence of using AlN additive (h-AlN to increase the AlN content of the coating and improve the reaction process was investigated. The simple mixing of Al and AlN powders was not suitable for fabricating AlN coatings through reactive plasma spraying. However, it was possible to prepare a homogenously mixed, agglomerated and dispersed Al/AlN mixture (which enabled in-flight interaction between the powder and the surrounding plasma by wet-mixing in a planetary mill. Increasing the AlN content in the mixture prevented coalescence and increased the nitride content gradually. Using 30 to 40 wt% AlN was sufficient to fabricate a thick (more than 200 µm AlN coating with high hardness (approximately 1000 Hv. The AlN additive prevented the coalescence of Al metal and enhanced post-deposition nitriding through N2 plasma irradiation by allowing the nitriding species in the plasma to impinge on a larger Al surface area. Using AlN as a feedstock additive was found to be a suitable method for fabricating AlN coatings by reactive plasma spraying. Moreover, the fabricated coatings consist of hexagonal (h-AlN, c-AlN (rock-salt and zinc-blend phases and certain oxides: aluminum oxynitride (Al5O6N, cubic sphalerite Al23O27N5 (ALON and Al2O3. The zinc-blend c-AlN and ALON phases were attributed to the transformation of the h-AlN feedstock during the reactive plasma spraying. Thus, the zinc-blend c

  16. Influence of substrate bias on the structure and properties of (Ti, Al)N films deposited by filtered cathodic vacuum arc

    International Nuclear Information System (INIS)

    Cheng, Y.H.; Tay, B.K.; Lau, S.P.; Shi, X.

    2001-01-01

    (Ti, Al)N films were deposited by an off-plane, double-bend, filtered cathodic vacuum arc technique in N 2 atmosphere at room temperature. The (Ti, Al)N films deposited are atomically smooth. The influence of substrate negative bias at the wide range (0-1000 V) on the deposition rate, surface morphology, crystal structure, internal stress, and mechanical properties of (Ti, Al)N films were systematically studied. Increasing substrate bias results in the decrease of deposition rate and the increase of surface roughness monotonically. At the bias of 0 V, (Ti, Al)N films are amorphous, and the internal stress, hardness, and Young's modulus for the deposited films are fairly low. With increasing substrate bias to 200 V, single-phase face-centered cubic-type nanocrystalline (Ti, Al)N films can be obtained, and the internal stress, hardness, and Young's modulus increase to the maximum of 7 GPa, 28 GPa, and 240 GPa, respectively. Further increase of substrate bias results in the decrease of intensity and the broadening of x-ray diffraction lines, and the gradual decrease of internal stress, hardness, and Young's modulus in (Ti, Al)N films

  17. Structural characterization of AlN films synthesized by pulsed laser deposition

    International Nuclear Information System (INIS)

    Szekeres, A.; Fogarassy, Zs.; Petrik, P.; Vlaikova, E.; Cziraki, A.; Socol, G.; Ristoscu, C.; Grigorescu, S.; Mihailescu, I.N.

    2011-01-01

    We obtained AlN thin films by pulsed laser deposition (PLD) from a polycrystalline AlN target using a pulsed KrF* excimer laser source (248 nm, 25 ns, intensity of ∼4 x 10 8 W/cm 2 , repetition rate 3 Hz, 10 J/cm 2 laser fluence). The target-Si substrate distance was 5 cm. Films were grown either in vacuum (10 -4 Pa residual pressure) or in nitrogen at a dynamic pressure of 0.1 and 10 Pa, using a total of 20,000 subsequent pulses. The films structure was characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM) and spectral ellipsometry (SE). Our TEM and XRD studies showed a strong dependence of the film structure on the nitrogen content in the ambient gas. The films deposited in vacuum exhibited a high quality polycrystalline structure with a hexagonal phase. The crystallite growth proceeds along the c-axis, perpendicular to the substrate surface, resulting in a columnar and strongly textured structure. The films grown at low nitrogen pressure (0.1 Pa) were amorphous as seen by TEM and XRD, but SE data analysis revealed ∼1.7 vol.% crystallites embedded in the amorphous AlN matrix. Increasing the nitrogen pressure to 10 Pa promotes the formation of cubic (≤10 nm) crystallites as seen by TEM but their density was still low to be detected by XRD. SE data analysis confirmed the results obtained from the TEM and XRD observations.

  18. AlN piezoelectric films for sensing and actuation

    NARCIS (Netherlands)

    Tran, A.T.

    2014-01-01

    Aluminum Nitride (AlN) is explored as a thin film material for piezoelectric MEMS applications. A pulse DC reactive sputtering technique is used to deposit the AlN thin films and process parameters are optimized to obtain good crystallinity and high c-axis orientation films. A CMOS compatible

  19. Design technique for all-dielectric non-polarizing beam splitter plate

    Science.gov (United States)

    Rizea, A.

    2012-03-01

    There are many situations when, for the proper working, an opto-electronic device requiring optical components does not change the polarization state of light after a reflection, splitting or filtering. In this paper, a design for a non-polarizing beam splitter plate is proposed. Based on certain optical properties of homogeneous dielectric materials we will establish a reliable thin film package formula, excellent for the start of optimization to obtain a 20-nm bandwidth non-polarizing beam splitter.

  20. The influence of non-polar lipids on tear film dynamics

    KAUST Repository

    Bruna, M.

    2014-04-04

    © 2014 Cambridge University Press. In this paper we examine the effect that physiological non-polar lipids, residing on the surface of an aqueous tear film, have on the film evolution. In our model we track the evolution of the thickness of the non-polar lipid layer, the thickness of the aqueous layer and the concentration of polar lipids which reside at the interface between the two. We also utilise a force balance in the non-polar lipid layer in order to determine its velocity. We show how to obtain previous models in the literature from our model by making particular choices of the parameters. We see the formation of boundary layers in some of these submodels, across which the concentration of polar lipid and the non-polar lipid velocity and film thickness vary. We solve our model numerically for physically realistic parameter values, and we find that the evolution of the aqueous layer and the polar lipid layer are similar to that described by previous authors. However, there are interesting dynamics for the non-polar lipid layer. The effects of altering the key parameters are highlighted and discussed. In particular, we see that the Marangoni number plays a key role in determining how far over the eye the non-polar lipid spreads.

  1. Ferromagnetic properties of Mn-doped AlN

    International Nuclear Information System (INIS)

    Li, H.; Bao, H.Q.; Song, B.; Wang, W.J.; Chen, X.L.; He, L.J.; Yuan, W.X.

    2008-01-01

    Mn-doped AlN polycrystalline powders with a wurtzite structure were synthesized by solid-state reactions. A red-orange band at 600 nm, due to Mn 3+ incorporated into the AlN lattice, is observed in the photoluminescence (PL) spectrum at room temperature (RT). Magnetic measurements show the samples possess hysteresis loops up to 300 K, indicating that the obtained powders are ferromagnetic at around RT. The Mn concentration-induced RT ferromagnetism is less than 1 at%. Our results confirm that the RT ferromagnetism can be realized in Mn-doped AlN

  2. Ferromagnetism in Cr-doped passivated AlN nanowires

    KAUST Repository

    Kanoun, Mohammed; Goumri-Said, Souraya; Schwingenschlö gl, Udo

    2014-01-01

    We apply first principles calculations to predict the effect of Cr doping on the electronic and magnetic properties of passivated AlN nanowires. We compare the energetics of the possible dopant sites and demonstrate the favorable configuration ferromagnetic ordering. The charge density of the pristine passivated AlN nanowires is used to elucidate the bonding character. Spin density maps demonstrate an induced spin polarization for N atoms next to dopant atoms, though most of the magnetism is carried by the Cr atoms. Cr-doped AlN nanowires turn out to be interesting for spintronic devices. © 2014 the Partner Organisations.

  3. Potential of AlN nanostructures as hydrogen storage materials.

    Science.gov (United States)

    Wang, Qian; Sun, Qiang; Jena, Puru; Kawazoe, Yoshiyuki

    2009-03-24

    The capability of AlN nanostructures (nanocages, nanocones, nanotubes, and nanowires) to store hydrogen has been studied using gradient-corrected density functional theory. In contrast to bulk AlN, which has the wurtzite structure and four-fold coordination, the Al sites in AlN nanostructures are unsaturated and have two- and three-fold coordination. Each Al atom is capable of binding one H(2) molecule in quasi-molecular form, leading to 4.7 wt % hydrogen, irrespective of the topology of the nanostructures. With the exception of AlN nanotubes, energetics does not support the adsorption of additional hydrogen. The binding energies of hydrogen to these unsaturated metal sites lie in the range of 0.1-0.2 eV/H(2) and are ideal for applications under ambient thermodynamic conditions. Furthermore, these materials do not suffer from the clustering problem that often plagues metal-coated carbon nanostructures.

  4. Conversion of proteins from a non-polarized to an apical secretory pattern in MDCK cells

    International Nuclear Information System (INIS)

    Vogel, Lotte K.; Larsen, Jakob E.; Hansen, Martin; Truffer, Renato

    2005-01-01

    Previously it was shown that fusion proteins containing the amino terminus of an apical targeted member of the serpin family fused to the corresponding carboxyl terminus of the non-polarized secreted serpin, antithrombin, are secreted mainly to the apical side of MDCK cells. The present study shows that this is neither due to the transfer of an apical sorting signal from the apically expressed proteins, since a sequence of random amino acids acts the same, nor is it due to the deletion of a conserved signal for correct targeting from the non-polarized secreted protein. Our results suggest that the polarity of secretion is determined by conformational sensitive sorting signals

  5. Guarded Cubical Type Theory

    DEFF Research Database (Denmark)

    Birkedal, Lars; Bizjak, Aleš; Clouston, Ranald

    2016-01-01

    This paper improves the treatment of equality in guarded dependent type theory (GDTT), by combining it with cubical type theory (CTT). GDTT is an extensional type theory with guarded recursive types, which are useful for building models of program logics, and for programming and reasoning...... with coinductive types. We wish to implement GDTT with decidable type-checking, while still supporting non-trivial equality proofs that reason about the extensions of guarded recursive constructions. CTT is a variation of Martin-L\\"of type theory in which the identity type is replaced by abstract paths between...... terms. CTT provides a computational interpretation of functional extensionality, is conjectured to have decidable type checking, and has an implemented type-checker. Our new type theory, called guarded cubical type theory, provides a computational interpretation of extensionality for guarded recursive...

  6. Guarded Cubical Type Theory

    DEFF Research Database (Denmark)

    Birkedal, Lars; Bizjak, Aleš; Clouston, Ranald

    2016-01-01

    This paper improves the treatment of equality in guarded dependent type theory (GDTT), by combining it with cubical type theory (CTT). GDTT is an extensional type theory with guarded recursive types, which are useful for building models of program logics, and for programming and reasoning...... with coinductive types. We wish to implement GDTT with decidable type checking, while still supporting non-trivial equality proofs that reason about the extensions of guarded recursive constructions. CTT is a variation of Martin-L\\"of type theory in which the identity type is replaced by abstract paths between...... terms. CTT provides a computational interpretation of functional extensionality, enjoys canonicity for the natural numbers type, and is conjectured to support decidable type-checking. Our new type theory, guarded cubical type theory (GCTT), provides a computational interpretation of extensionality...

  7. Effect of Al/N ratio during nucleation layer growth on Hall mobility and buffer leakage of molecular-beam epitaxy grown AlGaN/GaN heterostructures

    International Nuclear Information System (INIS)

    Storm, D.F.; Katzer, D.S.; Binari, S.C.; Shanabrook, B.V.; Zhou Lin; Smith, David J.

    2004-01-01

    AlGaN/GaN high electron mobility transistor structures have been grown by plasma-assisted molecular beam epitaxy on semi-insulating 4H-SiC utilizing an AlN nucleation layer. The electron Hall mobility of these structures increases from 1050 cm 2 /V s to greater than 1450 cm 2 /V s when the Al/N flux ratio during the growth of the nucleation layer is increased from 0.90 to 1.07. Buffer leakage currents increase abruptly by nearly three orders of magnitude when the Al/N ratio increases from below to above unity. Transmission electron microscopy indicates that high buffer leakage is correlated with the presence of stacking faults in the nucleation layer and cubic phase GaN in the buffer, while low mobilities are correlated with high dislocation densities

  8. Modeling diffusion coefficients in binary mixtures of polar and non-polar compounds

    DEFF Research Database (Denmark)

    Medvedev, Oleg; Shapiro, Alexander

    2005-01-01

    The theory of transport coefficients in liquids, developed previously, is tested on a description of the diffusion coefficients in binary polar/non-polar mixtures, by applying advanced thermodynamic models. Comparison to a large set of experimental data shows good performance of the model. Only f...

  9. Role of the electronegativity for the interface properties of non-polar heterostructures

    KAUST Repository

    Nazir, Safdar; Singh, Nirpendra; Kahaly, M. Upadhyay; Schwingenschlö gl, Udo

    2012-01-01

    Density functional theory is used to investigate the interfaces in the non-polar ATiO 3/SrTiO 3 (A=Pb, Ca, Ba) heterostructures. All TiO 2-terminated interfaces show an insulating behavior. By reduction of the O content in the AO, SrO, and TiO 2

  10. The influence of non-polar lipids on tear film dynamics

    KAUST Repository

    Bruna, M.; Breward, C.  J.  W.

    2014-01-01

    © 2014 Cambridge University Press. In this paper we examine the effect that physiological non-polar lipids, residing on the surface of an aqueous tear film, have on the film evolution. In our model we track the evolution of the thickness of the non

  11. Compatibility of AlN ceramics with molten lithium

    Energy Technology Data Exchange (ETDEWEB)

    Yoneoka, Toshiaki; Sakurai, Toshiharu; Sato, Toshihiko; Tanaka, Satoru [Tokyo Univ., Department of Quantum Engineering and Systems Science, Tokyo (Japan)

    2002-04-01

    AlN ceramics were a candidate for electrically insulating materials and facing materials against molten breeder in a nuclear fusion reactor. In the nuclear fusion reactor, interactions of various structural materials with solid and liquid breeder materials as well as coolant materials are important. Therefore, corrosion tests of AlN ceramics with molten lithium were performed. AlN specimens of six kinds, different in sintering additives and manufacturing method, were used. AlN specimens were immersed into molten lithium at 823 K. Duration for the compatibility tests was about 2.8 Ms (32 days). Specimens with sintering additive of Y{sub 2}O{sub 3} by about 5 mass% formed the network structure of oxide in the crystals of AlN. It was considered that the corrosion proceeded by reduction of the oxide network and the penetration of molten lithium through the reduced pass of this network. For specimens without sintering additive, Al{sub 2}O{sub 3} containing by about 1.3% in raw material was converted to fine oxynitride particles on grain boundary or dissolved in AlN crystals. After immersion into lithium, these specimens were found to be sound in shape but reduced in electrical resistivity. These degradation of the two types specimens were considered to be caused by the reduction of oxygen components. On the other hand, a specimen sintered using CaO as sintering additive was finally became appreciably high purity. This specimen showed good compatibility for molten lithium at least up to 823 K. It was concluded that the reduction of oxygen concentration in AlN materials was essential in order to improve the compatibility for molten lithium. (author)

  12. Thermoluminescence properties of AlN ceramics

    DEFF Research Database (Denmark)

    Trinkler, L.; Christensen, P.; Agersnap Larsen, N.

    1998-01-01

    The paper describes thermoluminescence (TL) properties of AlN:Y2O3 ceramics irradiated with ionising radiation. A high TL sensitivity of AlN:Y2O3 ceramics to radiation encouraged a study of the AlN ceramics for application as a dosimetric material. The paper presents experimental data on: glow...... curve, emission spectrum, dose response, energy dependence, influence of heating rate and fading rate. The measured TL characteristics were compared with those of well-known, widely used TLDs, i.e. LiF:Mg,Ti, LiF:Mg,Cu,P and Al2O3:C. It is concluded that AlN:Y2O3 ceramics showing a radiation sensitivity...... which is approximately 50 times greater than that of LiF:Mg,Ti is an interesting dosimetry material; however due to a high fading rate of the TL of AlN:Y2O3 on storage at room temperature, a further development of the material for improving the fading characteristics is needed for its application...

  13. Puente Alnö – Suecia

    Directory of Open Access Journals (Sweden)

    Editorial, Equipo

    1974-07-01

    Full Text Available This bridge that joins the island of Alnô with the peninsula near the port of Sundsvall In the north of Sweden is one of the many of prestressed concrete that have been constructed lately all over the world with the system of successive corbels. Until recently it was the longest bridge in the country and distinguishes itself by the elegance and slenderness of its longer arches and by the deep foundation system used to construct the four central bridge piers. It has been planned and constructed by Skanska Cementgjuteriet, a firm that is specializing in this type of structure.Este puente, que une la isla de Alno con la península, cerca del puerto de Sundsvall, en el norte de Suecia, es uno de los muchos de hormigón pretensado que se han construido últimamente en todo el mundo por el sistema de voladizos sucesivos. Hasta hace poco era el puente más largo del país y destaca por la elegancia y esbeltez de sus arcos más largos y por el sistema de cimentación profunda empleado para construir las cuatro pilas centrales. Ha sido proyectado y construido por Skanska Cementgjuteriet, empresa que se ha especializado en este tipo de estructura.

  14. Electronic structures of the F-terminated AlN nanoribbons

    Indian Academy of Sciences (India)

    Using the first-principles calculations, electronic properties for the F-terminated AlN nanoribbons with both zigzag and armchair edges are studied. The results show that both the zigzag and armchair AlN nanoribbons are semiconducting and nonmagnetic, and the indirect band gap of the zigzag AlN nanoribbons and the ...

  15. Broadband non-polarizing terahertz beam splitters with variable split ratio

    KAUST Repository

    Wei, Minggui

    2017-08-15

    Seeking effective terahertz functional devices has always aroused extensive attention. Of particular interest is the terahertz beam splitter. Here, we have proposed, designed, manufactured, and tested a broadband non-polarizing terahertz beam splitter with a variable split ratio based on an all-dielectric metasurface. The metasurface was created by patterning a dielectric surface of the N-step phase gradient and etching to a few hundred micrometers. The conversion efficiency as high as 81% under the normal incidence at 0.7 THz was achieved. Meanwhile, such a splitter works well over a broad frequency range. The split ratio of the proposed design can be continuously tuned by simply shifting the metasurface, and the angle of emergences can also be easily adjusted by choosing the step of phase gradients. The proposed design is non-polarizing, and its performance is kept under different polarizations.

  16. Broadband non-polarizing terahertz beam splitters with variable split ratio

    Science.gov (United States)

    Wei, Minggui; Xu, Quan; Wang, Qiu; Zhang, Xueqian; Li, Yanfeng; Gu, Jianqiang; Tian, Zhen; Zhang, Xixiang; Han, Jiaguang; Zhang, Weili

    2017-08-01

    Seeking effective terahertz functional devices has always aroused extensive attention. Of particular interest is the terahertz beam splitter. Here, we have proposed, designed, manufactured, and tested a broadband non-polarizing terahertz beam splitter with a variable split ratio based on an all-dielectric metasurface. The metasurface was created by patterning a dielectric surface of the N-step phase gradient and etching to a few hundred micrometers. The conversion efficiency as high as 81% under the normal incidence at 0.7 THz was achieved. Meanwhile, such a splitter works well over a broad frequency range. The split ratio of the proposed design can be continuously tuned by simply shifting the metasurface, and the angle of emergences can also be easily adjusted by choosing the step of phase gradients. The proposed design is non-polarizing, and its performance is kept under different polarizations.

  17. Broadband non-polarizing terahertz beam splitters with variable split ratio

    KAUST Repository

    Wei, Minggui; Xu, Quan; Wang, Qiu; Zhang, Xueqian; Li, Yanfeng; Gu, Jianqiang; Tian, Zhen; Zhang, Xixiang; Han, Jiaguang; Zhang, Weili

    2017-01-01

    Seeking effective terahertz functional devices has always aroused extensive attention. Of particular interest is the terahertz beam splitter. Here, we have proposed, designed, manufactured, and tested a broadband non-polarizing terahertz beam splitter with a variable split ratio based on an all-dielectric metasurface. The metasurface was created by patterning a dielectric surface of the N-step phase gradient and etching to a few hundred micrometers. The conversion efficiency as high as 81% under the normal incidence at 0.7 THz was achieved. Meanwhile, such a splitter works well over a broad frequency range. The split ratio of the proposed design can be continuously tuned by simply shifting the metasurface, and the angle of emergences can also be easily adjusted by choosing the step of phase gradients. The proposed design is non-polarizing, and its performance is kept under different polarizations.

  18. Observations of Rabi oscillations in a non-polar InGaN quantum dot

    International Nuclear Information System (INIS)

    Reid, Benjamin P. L.; Chan, Christopher C. S.; Taylor, Robert A.; Kocher, Claudius; Zhu, Tongtong; Oehler, Fabrice; Emery, Robert; Oliver, Rachel A.

    2014-01-01

    Experimental observation of Rabi rotations between an exciton excited state and the crystal ground state in a single non-polar InGaN quantum dot is presented. The exciton excited state energy is determined by photoluminescence excitation spectroscopy using two-photon excitation from a pulsed laser. The population of the exciton excited state is seen to undergo power dependent damped Rabi oscillations.

  19. Observations of Rabi oscillations in a non-polar InGaN quantum dot

    Energy Technology Data Exchange (ETDEWEB)

    Reid, Benjamin P. L., E-mail: benjamin.reid@physics.ox.ac.uk; Chan, Christopher C. S.; Taylor, Robert A. [Department of Physics, University of Oxford, Parks Road, Oxford OX1 3PU (United Kingdom); Kocher, Claudius [Department of Physics, University of Oxford, Parks Road, Oxford OX1 3PU (United Kingdom); Konstanz University, Konstanz (Germany); Zhu, Tongtong; Oehler, Fabrice; Emery, Robert; Oliver, Rachel A. [Department of Materials Science and Metallurgy, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)

    2014-06-30

    Experimental observation of Rabi rotations between an exciton excited state and the crystal ground state in a single non-polar InGaN quantum dot is presented. The exciton excited state energy is determined by photoluminescence excitation spectroscopy using two-photon excitation from a pulsed laser. The population of the exciton excited state is seen to undergo power dependent damped Rabi oscillations.

  20. Towards an elastic model of wurtzite AlN nanowires

    International Nuclear Information System (INIS)

    Mitrushchenkov, A; Chambaud, G; Yvonnet, J; He, Q-C

    2010-01-01

    Starting with ab initio calculations of AlN wurtzite [0001] nanowires with diameters up to 4 nm, a finite element method is developed to deal with larger nanostructures/nanoparticles. The ab initio calculations show that the structure of the nanowires can be well represented by an internal part with AlN bulk elastic properties, and one atomic surface layer with its own elastic behavior. The proposed finite element method includes surface elements with their own elastic properties using surface elastic coefficients deduced from the ab initio calculations. The elastic properties obtained with the finite element model compare very well with those obtained with the full ab initio calculations.

  1. NMR-Based Identification of Metabolites in Polar and Non-Polar Extracts of Avian Liver.

    Science.gov (United States)

    Fathi, Fariba; Brun, Antonio; Rott, Katherine H; Falco Cobra, Paulo; Tonelli, Marco; Eghbalnia, Hamid R; Caviedes-Vidal, Enrique; Karasov, William H; Markley, John L

    2017-11-16

    Metabolites present in liver provide important clues regarding the physiological state of an organism. The aim of this work was to evaluate a protocol for high-throughput NMR-based analysis of polar and non-polar metabolites from a small quantity of liver tissue. We extracted the tissue with a methanol/chloroform/water mixture and isolated the polar metabolites from the methanol/water layer and the non-polar metabolites from the chloroform layer. Following drying, we re-solubilized the fractions for analysis with a 600 MHz NMR spectrometer equipped with a 1.7 mm cryogenic probe. In order to evaluate the feasibility of this protocol for metabolomics studies, we analyzed the metabolic profile of livers from house sparrow ( Passer domesticus ) nestlings raised on two different diets: livers from 10 nestlings raised on a high protein diet (HP) for 4 d and livers from 12 nestlings raised on the HP diet for 3 d and then switched to a high carbohydrate diet (HC) for 1 d. The protocol enabled the detection of 52 polar and nine non-polar metabolites in ¹H NMR spectra of the extracts. We analyzed the lipophilic metabolites by one-way ANOVA to assess statistically significant concentration differences between the two groups. The results of our studies demonstrate that the protocol described here can be exploited for high-throughput screening of small quantities of liver tissue (approx. 100 mg wet mass) obtainable from small animals.

  2. Charge transport in non-polar and semi-polar III-V nitride heterostructures

    International Nuclear Information System (INIS)

    Konar, Aniruddha; Verma, Amit; Fang, Tian; Zhao, Pei; Jana, Raj; Jena, Debdeep

    2012-01-01

    Compared to the intense research focus on the optical properties, the transport properties in non-polar and semi-polar III-nitride semiconductors remain relatively unexplored to date. The purpose of this paper is to discuss charge-transport properties in non-polar and semi-polar orientations of GaN in a comparative fashion to what is known for transport in polar orientations. A comprehensive approach is adopted, starting from an investigation of the differences in the electronic bandstructure along different polar orientations of GaN. The polarization fields along various orientations are then discussed, followed by the low-field electron and hole mobilities. A number of scattering mechanisms that are specific to non-polar and semi-polar GaN heterostructures are identified, and their effects are evaluated. Many of these scattering mechanisms originate due to the coupling of polarization with disorder and defects in various incarnations depending on the crystal orientation. The effect of polarization orientation on carrier injection into quantum-well light-emitting diodes is discussed. This paper ends with a discussion of orientation-dependent high-field charge-transport properties including velocity saturation, instabilities and tunneling transport. Possible open problems and opportunities are also discussed. (paper)

  3. Design of reproducible polarized and non-polarized edge filters using genetic algorithm

    International Nuclear Information System (INIS)

    Ejigu, Efrem Kebede; Lacquet, B M

    2010-01-01

    Recent advancement in optical fibre communications technology is partly due to the advancement of optical thin film technology. The advancement of optical thin film technology includes the development of new and existing optical filter design methods. The genetic algorithm is one of the new design methods that show promising results in designing a number of complicated design specifications. It is the finding of this study that the genetic algorithm design method, through its optimization capability, can give more reliable and reproducible designs of any specifications. The design method in this study optimizes the thickness of each layer to get to the best possible solution. Its capability and unavoidable limitations in designing polarized and non-polarized edge filters from absorptive and dispersive materials is well demonstrated. It is also demonstrated that polarized and non-polarized designs from the genetic algorithm are reproducible with great success. This research has accomplished the great task of formulating a computer program using the genetic algorithm in a Matlab environment for the design of a reproducible polarized and non-polarized filters of any sort from any kind of materials

  4. Electric Charge Accumulation in Polar and Non-Polar Polymers under Electron Beam Irradiation

    Science.gov (United States)

    Nagasawa, Kenichiro; Honjoh, Masato; Takada, Tatsuo; Miyake, Hiroaki; Tanaka, Yasuhiro

    The electric charge accumulation under an electron beam irradiation (40 keV and 60 keV) was measured by using the pressure wave propagation (PWP) method in the dielectric insulation materials, such as polar polymeric films (polycarbonate (PC), polyethylene-naphthalate (PEN), polyimide (PI), and polyethylene-terephthalate (PET)) and non-polar polymeric films (polystyrene (PS), polypropylene (PP), polyethylene (PE) and polytetrafluoroethylene (PTFE)). The PE and PTFE (non-polar polymers) showed the properties of large amount of electric charge accumulation over 50 C/m3 and long saturation time over 80 minutes. The PP and PS (non-polar polymer) showed the properties of middle amount of charge accumulation about 20 C/m3 and middle saturation time about 1 to 20 minutes. The PC, PEN, PI and PET (polar polymers) showed the properties of small amount of charge accumulation about 5 to 20 C/m3 and within short saturation time about 1.0 minutes. This paper summarizes the relationship between the properties of charge accumulation and chemical structural formula, and compares between the electro static potential distribution with negative charged polymer and its chemical structural formula.

  5. Electric charge accumulation in polar and non-polar polymers under electron beam irradiation

    International Nuclear Information System (INIS)

    Nagasawa, Kenichiro; Honjoh, Masato; Takada, Tatsuo; Miyake, Hiroaki; Tanaka, Yasuhiro

    2010-01-01

    The electric charge accumulation under an electron beam irradiation (40 keV and 60 keV) was measured by using the pressure wave propagation (PWP) method in the dielectric insulation materials, such as polar polymeric films (polycarbonate (PC), polyethylene-naphthalate (PEN), polyimide (PI), and polyethylene-terephthalate (PET)) and non-polar polymeric films (polystyrene (PS), polypropylene (PP), polyethylene (PE) and polytetrafluoroethylene (PTFE)). The PE and PTFE (non-polar polymers) showed the properties of large amount of electric charge accumulation over 50 C/m 3 and long saturation time over 80 minutes. The PP and PS (non-polar polymer) showed the properties of middle amount of charge accumulation about 20 C/m 3 and middle saturation time about 1 to 20 minutes. The PC, PEN, PI and PET (polar polymers) showed the properties of small amount of charge accumulation about 5 to 20 C/m 3 and within short saturation time about 1.0 minutes. This paper summarizes the relationship between the properties of charge accumulation and chemical structural formula, and compares between the electro static potential distribution with negative charged polymer and its chemical structural formula. (author)

  6. Development of Field-Controlled Smart Optic Materials (ScN, AlN) with Rare Earth Dopants

    Science.gov (United States)

    Kim, Hyun-Jung; Park, Yeonjoon; King, Glen C.; Choi, Sang H.

    2012-01-01

    The purpose of this investigation is to develop the fundamental materials and fabrication technology for field-controlled spectrally active optics that are essential for industry, NASA, and DOD applications such as: membrane optics, filters for LIDARs, windows for sensors, telescopes, spectroscopes, cameras, flat-panel displays, etc. ScN and AlN thin films were fabricated on c-axis Sapphire (0001) or quartz substrate with the RF and DC magnetron sputtering. The crystal structure of AlN in fcc (rocksalt) and hcp (wurtzite) were controlled. Advanced electrical characterizations were performed, including I-V and Hall Effect Measurement. ScN film has a free carrier density of 5.8 x 10(exp 20)/per cubic centimeter and a conductivity of 1.1 x 10(exp 3) per centimeter. The background ntype conductivity of as-grown ScN has enough free electrons that can readily interact with the photons. The high density of free electrons and relatively low mobility indicate that these films contain a high level of shallow donors as well as deep levels. Also, the UV-Vis spectrum of ScN and AlN thin films with rare earth elements (Er or Ho) were measured at room temperature. Their optical band gaps were estimated to be about 2.33eV and 2.24eV, respectively, which are obviously smaller than that of undoped thin film ScN (2.4eV). The red-shifted absorption onset gives direct evidence for the decrease of band gap (Eg) and the energy broadening of valence band states are attributable to the doping. As the doped elements enter the ScN crystal lattices, the localized band edge states form at the doped sites with a reduction of Eg. Using a variable angle spectroscopic ellipsometer, the decrease in refractive index with applied field is observed with a smaller shift in absorption coefficient.

  7. Interpolation of natural cubic spline

    Directory of Open Access Journals (Sweden)

    Arun Kumar

    1992-01-01

    Full Text Available From the result in [1] it follows that there is a unique quadratic spline which bounds the same area as that of the function. The matching of the area for the cubic spline does not follow from the corresponding result proved in [2]. We obtain cubic splines which preserve the area of the function.

  8. ALnS2:RE (A=K, Rb; Ln=La, Gd, Lu, Y): New optical materials family

    International Nuclear Information System (INIS)

    Jarý, V.; Havlák, L.; Bárta, J.; Mihóková, E.; Buryi, M.; Nikl, M.

    2016-01-01

    In the presented review paper, new potentially interesting material family, RE-doped ternary sulfides ALnS 2 (RE=Ce, Pr, Sm, Eu, Tb, Tm; A=Rb, K; Ln=La, Gd, Lu, Y) is discussed. Their synthesis is described and the structural and optical properties, characterized by methods of X-ray diffraction, time-resolved luminescence spectroscopy and electron paramagnetic resonance, are summarized and reviewed especially with respect to the influence of their composition. All samples discussed were synthesized in the form of transparent crystalline hexagonal platelets by chemical reaction under the flow of hydrogen sulfide. Their luminescence characteristics, including absorption, radioluminescence, photoluminescence excitation and emission spectra and decay kinetics, were measured and evaluated in a broad temperature (8–800 K) and concentration (0.002–20% of dopants) range. The application potential of mentioned compounds in the field of white LED solid state lightings or X-ray phosphors is thoroughly discussed. - Highlights: • RE-doped ALnS 2 (A=K, Rb; Ln=La, Gd, Lu, Y) were synthesized. • Their optical characteristics are summarized. • Concentration and temperature dependences of luminescence features investigated. • EPR technique is employed to explain Eu 2+ incorporation into KLuS 2 host. • The application potential in white LED and X-ray phosphors is discussed.

  9. Experimental and computational study on the phase stability of Al-containing cubic transition metal nitrides

    International Nuclear Information System (INIS)

    Rovere, Florian; Mayrhofer, Paul H; Music, Denis; Ershov, Sergey; Baben, Moritz to; Schneider, Jochen M; Fuss, Hans-Gerd

    2010-01-01

    The phase stability of Al-containing cubic transition metal (TM) nitrides, where Al substitutes for TM (i.e. TM 1-x Al x N), is studied as a function of the TM valence electron concentration (VEC). X-ray diffraction and thermal analyses data of magnetron sputtered Ti 1-x Al x N, V 1-x Al x N and Cr 1-x Al x N films indicate increasing phase stability of cubic TM 1-x Al x N at larger Al contents and higher temperatures with increasing TM VEC. These experimental findings can be understood based on first principle investigations of ternary cubic TM 1-x Al x N with TM = Sc, Ti, V, Cr, Y, Zr and Nb where the TM VEC and the lattice strain are systematically varied. However, our experimental data indicate that, in addition to the decomposition energetics (cubic TM 1-x Al x N → cubic TMN + hexagonal AlN), future stability models have to include nitrogen release as one of the mechanisms that critically determine the overall phase stability of TM 1-x Al x N.

  10. Dispersing surface-modified imogolite nanotubes in polar and non-polar solvents

    Science.gov (United States)

    Li, Ming; Brant, Jonathan A.

    2018-02-01

    Furthering the development of nanocomposite structures, namely membranes for water treatment applications, requires that methods be developed to ensure nanoparticle dispersion in polar and non-polar solvents, as both are widely used in associated synthesis techniques. Here, we report on a two-step method to graft polyvinylpyrrolidone (PVP), and a one-step method for octadecylphosphonic acid (OPA), onto the outer surfaces of imogolite nanotubes. The goal of these approaches was to improve and maintain nanotube dispersion in polymer compatible polar and non-polar solvents. The PVP coating modified the imogolite surface charge from positive to weakly negative at pH ≤ 9; the OPA made it weakly positive at acidic pH values to negative at pH ≥ 7. The PVP surface coating stabilized the nanotubes through steric hindrance in polar protic, dipolar aprotic, and chloroform. In difference to the PVP, the OPA surface coating allowed the nanotubes to be dispersed in n-hexane and chloroform, but not in the polar solvents. The lack of miscibility in the polar solvents, as well as the better dispersion in n-hexane, was attributed to the stronger hydrophobicity of the OPA polymer relative to the PVP. [Figure not available: see fulltext.

  11. Broadband non-polarizing beam splitter based on guided mode resonance effect

    International Nuclear Information System (INIS)

    Ma Jian-Yong; Xu Cheng; Qiang Ying-Huai; Zhu Ya-Bo

    2011-01-01

    A broadband non-polarizing beam splitter (NPBS) operating in the telecommunication C+L band is designed by using the guided mode resonance effect of periodic silicon-on-insulator (SOI) elements. It is shown that this double layer SOI structure can provide ∼50/50 beam ratio with the maximum divergences between reflection and transmission being less than 8% over the spectrum of 1.4 μm∼1.7 μm and 1% in the telecommunication band for both TE and TM polarizations. The physical basis of this broadband non-polarizing property is on the simultaneous excitation of the TE and TM strong modulation waveguide modes near the designed spectrum band. Meanwhile, the electric field distributions for both TE and TM polarizations verify the resonant origin of spectrum in the periodic SOI structure. Furthermore, it is demonstrated with our calculations that the beam splitter proposed here is tolerant to the deviations of incident angle and structure parameters, which make it very easy to be fabricated with current IC technology. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

  12. Non-Polar Natural Products from Bromelia laciniosa, Neoglaziovia variegata and Encholirium spectabile (Bromeliaceae

    Directory of Open Access Journals (Sweden)

    Ole Johan Juvik

    2017-09-01

    Full Text Available Extensive regional droughts are already a major problem on all inhabited continents and severe regional droughts are expected to become an increasing and extended problem in the future. Consequently, extended use of available drought resistant food plants should be encouraged. Bromelia laciniosa, Neoglaziovia variegata and Encholirium spectabile are excellent candidates in that respect because they are established drought resistant edible plants from the semi-arid Caatinga region. From a food safety perspective, increased utilization of these plants would necessitate detailed knowledge about their chemical constituents. However, their chemical compositions have previously not been determined. For the first time, the non-polar constituents of B. laciniosa, N. variegata and E. spectabile have been identified. This is the first thorough report on natural products from N. variegata, E. spectabile, and B. laciniosa. Altogether, 20 non-polar natural products were characterized. The identifications were based on hyphenated gas chromatography-high resolution mass spectrometry (GC-HRMS and supported by 1D and 2D Nuclear Magnetic Resonance (NMR plant metabolomics.

  13. Broadband non-polarizing beam splitter based on guided mode resonance effect

    Science.gov (United States)

    Ma, Jian-Yong; Xu, Cheng; Qiang, Ying-Huai; Zhu, Ya-Bo

    2011-10-01

    A broadband non-polarizing beam splitter (NPBS) operating in the telecommunication C+L band is designed by using the guided mode resonance effect of periodic silicon-on-insulator (SOI) elements. It is shown that this double layer SOI structure can provide ~50/50 beam ratio with the maximum divergences between reflection and transmission being less than 8% over the spectrum of 1.4 μm~1.7 μm and 1% in the telecommunication band for both TE and TM polarizations. The physical basis of this broadband non-polarizing property is on the simultaneous excitation of the TE and TM strong modulation waveguide modes near the designed spectrum band. Meanwhile, the electric field distributions for both TE and TM polarizations verify the resonant origin of spectrum in the periodic SOI structure. Furthermore, it is demonstrated with our calculations that the beam splitter proposed here is tolerant to the deviations of incident angle and structure parameters, which make it very easy to be fabricated with current IC technology.

  14. High temperature energy harvesters utilizing ALN/3C-SiC composite diaphragms

    Science.gov (United States)

    Lai, Yun-Ju; Li, Wei-Chang; Felmetsger, Valery V.; Senesky, Debbie G.; Pisano, Albert P.

    2014-06-01

    Microelectromechanical systems (MEMS) energy harvesting devices aiming at powering wireless sensor systems for structural health monitoring in harsh environments are presented. For harsh environment wireless sensor systems, sensor modules are required to operate at elevated temperatures (> 250°C) with capabilities to resist harsh chemical conditions, thereby the use of battery-based power sources becomes challenging and not economically efficient if considering the required maintenance efforts. To address this issue, energy harvesting technology is proposed to replace batteries and provide a sustainable power source for the sensor systems towards autonomous harsh environment wireless sensor networks. In particular, this work demonstrates a micromachined aluminum nitride/cubic silicon carbide (AlN/3C-SiC) composite diaphragm energy harvester, which enables high temperature energy harvesting from ambient pulsed pressure sources. The fabricated device yields an output power density of 87 μW/cm2 under 1.48-psi pressure pulses at 1 kHz while connected to a 14.6-kΩ load resistor. The effects of pulse profile on output voltage have been studied, showing that the output voltage can be maximized by optimizing the diaphragm resonance frequency based on specific pulse characteristics. In addition, temperature dependence of the diaphragm resonance frequency over the range of 20°C to 600°C has been investigated and the device operation at temperatures as high as 600°C has been verified.

  15. On compensation in Si-doped AlN

    Science.gov (United States)

    Harris, Joshua S.; Baker, Jonathon N.; Gaddy, Benjamin E.; Bryan, Isaac; Bryan, Zachary; Mirrielees, Kelsey J.; Reddy, Pramod; Collazo, Ramón; Sitar, Zlatko; Irving, Douglas L.

    2018-04-01

    Controllable n-type doping over wide ranges of carrier concentrations in AlN, or Al-rich AlGaN, is critical to realizing next-generation applications in high-power electronics and deep UV light sources. Silicon is not a hydrogenic donor in AlN as it is in GaN; despite this, the carrier concentration should be controllable, albeit less efficiently, by increasing the donor concentration during growth. At low doping levels, an increase in the Si content leads to a commensurate increase in free electrons. Problematically, this trend does not persist to higher doping levels. In fact, a further increase in the Si concentration leads to a decrease in free electron concentration; this is commonly referred to as the compensation knee. While the nature of this decrease has been attributed to a variety of compensating defects, the mechanism and identity of the predominant defects associated with the knee have not been conclusively determined. Density functional theory calculations using hybrid exchange-correlation functionals have identified VAl+n SiAl complexes as central to mechanistically understanding compensation in the high Si limit in AlN, while secondary impurities and vacancies tend to dominate compensation in the low Si limit. The formation energies and optical signatures of these defects in AlN are calculated and utilized in a grand canonical charge balance solver to identify carrier concentrations as a function of Si content. The results were found to qualitatively reproduce the experimentally observed compensation knee. Furthermore, these calculations predict a shift in the optical emissions present in the high and low doping limits, which is confirmed with detailed photoluminescence measurements.

  16. Hall effect thruster with an AlN chamber

    International Nuclear Information System (INIS)

    Barral, S.; Jayet, Y.; Mazouffre, S.; Veron, E.; Echegut, P.; Dudeck, M.

    2005-01-01

    The plasma discharge of a Hall-effect thruster (SPT) is strongly depending of the plasma-insulated wall interactions. These interactions are mainly related to the energy deposition, potential sheath effect and electron secondary emission rate (e.s.e.). In usual SPT, the annular channel is made of BN-SiO 2 . The SPT100-ML (laboratory model will be tested with an AlN chamber in the French test facility Pivoine in the laboratoire d'Aerothermique (Orleans-France). The different parameters such as discharge current, thrust, plasma oscillations and wall temperature will studied for several operating conditions. The results will be compared with a fluid model developed in IPPT (Warsaw-Poland) taking into account electron emission from the internal and external walls and using previous experimental measurements of e.s.e. for AlN from ONERA (Toulouse-France). The surface state of AlN will be analysed before and after experiments by an Environmental Scanning Electron Microscope and by a Strength Electron Microscope. (author)

  17. Berkovich Nanoindentation on AlN Thin Films

    Directory of Open Access Journals (Sweden)

    Jian Sheng-Rui

    2010-01-01

    Full Text Available Abstract Berkovich nanoindentation-induced mechanical deformation mechanisms of AlN thin films have been investigated by using atomic force microscopy (AFM and cross-sectional transmission electron microscopy (XTEM techniques. AlN thin films are deposited on the metal-organic chemical-vapor deposition (MOCVD derived Si-doped (2 × 1017 cm−3 GaN template by using the helicon sputtering system. The XTEM samples were prepared by means of focused ion beam (FIB milling to accurately position the cross-section of the nanoindented area. The hardness and Young’s modulus of AlN thin films were measured by a Berkovich nanoindenter operated with the continuous contact stiffness measurements (CSM option. The obtained values of the hardness and Young’s modulus are 22 and 332 GPa, respectively. The XTEM images taken in the vicinity regions just underneath the indenter tip revealed that the multiple “pop-ins” observed in the load–displacement curve during loading are due primarily to the activities of dislocation nucleation and propagation. The absence of discontinuities in the unloading segments of load–displacement curve suggests that no pressure-induced phase transition was involved. Results obtained in this study may also have technological implications for estimating possible mechanical damages induced by the fabrication processes of making the AlN-based devices.

  18. High-quality AlN films grown on chemical vapor-deposited graphene films

    Directory of Open Access Journals (Sweden)

    Chen Bin-Hao

    2016-01-01

    Full Text Available We report the growth of high-quality AlN films on graphene. The graphene films were synthesized by CVD and then transferred onto silicon substrates. Epitaxial aluminum nitride films were deposited by DC magnetron sputtering on both graphene as an intermediate layer and silicon as a substrate. The structural characteristics of the AlN films and graphene were investigated. Highly c-axis-oriented AlN crystal structures are investigated based on the XRDpatterns observations.

  19. Synthesis and characterization of straight and stacked-sheet AlN nanowires with high purity

    International Nuclear Information System (INIS)

    Lei, M.; Yang, H.; Li, P.G.; Tang, W.H.

    2008-01-01

    Large-scale AlN nanowires with hexagonal crystal structure were synthesized by the direct nitridation method at high temperatures. The experimental results indicate that these single-crystalline AlN nanowires have high purity and consist of straight and stacked-sheet nanowires. It is found that straight AlN nanowire grows along [1, 1, -2, 0] direction, whereas the stacked-sheet nanowire with hexagonal cross section is along [0 0 0 1] direction. It is thought that vapor-solid (VS) mechanism should be responsible for the growth of AlN nanowires

  20. Cobalt nanoparticles deposited and embedded in AlN: Magnetic, magneto-optical, and morphological properties

    International Nuclear Information System (INIS)

    Huttel, Y.; Gomez, H.; Clavero, C.; Cebollada, A.; Armelles, G.; Navarro, E.; Ciria, M.; Benito, L.; Arnaudas, J.I.; Kellock, A.J.

    2004-01-01

    We present a structural, morphological, magnetic, and magneto-optical study of cobalt nanoparticles deposited on 50 A ring AlN/c-sapphire substrates and embedded in an AlN matrix. The dependence of the properties of Co nanoclusters deposited on AlN with growth temperature and amount of deposited Co are studied and discussed. Also we directly compare the properties of as grown and AlN embedded Co nanoclusters and show that the AlN matrix has a strong impact on their magnetic and magneto-optical properties

  1. Non-polarized cytokine profile of a long-term non-progressor HIV infected patient.

    Science.gov (United States)

    Pina, Ana Flávia; Matos, Vanessa Terezinha Gubert de; Bonin, Camila Mareti; Dal Fabbro, Márcia Maria Ferrairo Janini; Tozetti, Inês Aparecida

    The HIV-1 initial viral infection may present diverse clinical and laboratory course and lead to rapid, intermediate, or long-term progression. Among the group of non-progressors, the elite controllers are those who control the infection most effectively, in the absence of antiretroviral therapy (ART). In this paper, the TH1, TH2 and TH17 cytokines profiles are described, as well as clinical and laboratory aspects of an HIV-infected patient with undetectable viral load without antiretroviral therapy. Production of IL-6, IL-10, TNF-α, IFN-γ, and IL-17 was detected; in contrast IL-4 was identified. Host-related factors could help explain such a level of infection control, namely the differentiated modulation of the cellular immune response and a non-polarized cytokine response of the TH1 and TH2 profiles. Copyright © 2018 Sociedade Brasileira de Infectologia. Published by Elsevier Editora Ltda. All rights reserved.

  2. Tridodecylamine, an efficient charge control agent in non-polar media for electrophoretic inks application

    Science.gov (United States)

    Noel, Amélie; Mirbel, Déborah; Cloutet, Eric; Fleury, Guillaume; Schatz, Christophe; Navarro, Christophe; Hadziioannou, Georges; CyrilBrochon

    2018-01-01

    In order to obtain efficient electrophoretic inks, Tridodecylamine (Dod3N), has been studied as charge control agent (CCA) in a non-polar paraffin solvent (Isopar G) for various inorganic pigments (TiO2 and Fe2O3). All hydrophobic mineral oxides, i.e. treated with octyltrimethoxysilane (C8) or dodecyltrimethoxysilane (C12), were found to be negatively charged in presence of Dod3N. The electrophoretic mobilities of inorganic pigments seemed to be strongly dependent of their isoelectric point (IEP) and also of the concentration of dod3N with an optimum range between 10 and 20 mM depending on the pigments. Finally, an electrophoretic ink constituted of hydrophobic mineral oxides in presence of Dod3N was tested in a device. Its efficiency as charge control agent to negatively charge hydrophobic particles was confirmed through good optical properties and fast response time (220 ms at 200 kV m-1).

  3. Role of the electronegativity for the interface properties of non-polar heterostructures

    KAUST Repository

    Nazir, Safdar

    2012-04-01

    Density functional theory is used to investigate the interfaces in the non-polar ATiO 3/SrTiO 3 (A=Pb, Ca, Ba) heterostructures. All TiO 2-terminated interfaces show an insulating behavior. By reduction of the O content in the AO, SrO, and TiO 2 layers, metallic interface states develop, due to the occupation of the Ti 3d orbitals. For PbTiO 3/SrTiO 3, the Pb 6p states cross the Fermi energy. O vacancy formation energies depend strictly on the electronegativity and the effective volume of the A ion, while the main characteristics of the interface electronic states are maintained. © Europhysics Letters Association, 2012.

  4. The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem

    Energy Technology Data Exchange (ETDEWEB)

    Humphreys, C.J., E-mail: colin.humphreys@msm.cam.ac.uk [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Griffiths, J.T., E-mail: jg641@cam.ac.uk [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Tang, F., E-mail: ft274@cam.ac.uk [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Oehler, F., E-mail: fabrice.oehler@lpn.cnrs.fr [CNRS/C2N, Paris Sud University, Route de Nozay, 91460 Marcoussis (France); Findlay, S.D., E-mail: scott.findlay@monash.edu [School of Physics and Astronomy, Monash University, Victoria 3800 (Australia); Zheng, C., E-mail: changlin.zheng@monash.edu [Monash Centre for Electron Microscopy, Monash University, Victoria 3800 (Australia); Etheridge, J., E-mail: joanne.etheridge@mcem.monash.edu [Department of Materials Science and Engineering, Monash University, Victoria 3800 (Australia); Martin, T.L., E-mail: tomas.martin@materials.ox.ac.uk [Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom); Bagot, P.A.J., E-mail: paul.bagot@materials.ox.ac.uk [Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom); Moody, M.P., E-mail: michael.moody@materials.ox.ac.uk [Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom); Sutherland, D., E-mail: danny.sutherland@manchester.ac.uk [School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL (United Kingdom); Dawson, P., E-mail: philip.dawson@manchester.ac.uk [School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL (United Kingdom); Schulz, S., E-mail: stefan.schulz@tyndall.ie [Tyndall National Institute, Lee Maltings Complex, Dyke Parade, Cork (Ireland); and others

    2017-05-15

    Highlights: • We have studied the atomic structure of polar and non-polar InGaN quantum wells. • The non-polar (11-20) InGaN quantum wells contain indium-rich clusters, unlike the polar (0001) quantum wells. • The electrons and holes in the quantum wells are localised by different mechanisms. - Abstract: We have used high resolution transmission electron microscopy (HRTEM), aberration-corrected quantitative scanning transmission electron microscopy (Q-STEM), atom probe tomography (APT) and X-ray diffraction (XRD) to study the atomic structure of (0001) polar and (11-20) non-polar InGaN quantum wells (QWs). This paper provides an overview of the results. Polar (0001) InGaN in QWs is a random alloy, with In replacing Ga randomly. The InGaN QWs have atomic height interface steps, resulting in QW width fluctuations. The electrons are localised at the top QW interface by the built-in electric field and the well-width fluctuations, with a localisation energy of typically 20 meV. The holes are localised near the bottom QW interface, by indium fluctuations in the random alloy, with a localisation energy of typically 60 meV. On the other hand, the non-polar (11-20) InGaN QWs contain nanometre-scale indium-rich clusters which we suggest localise the carriers and produce longer wavelength (lower energy) emission than from random alloy non-polar InGaN QWs of the same average composition. The reason for the indium-rich clusters in non-polar (11-20) InGaN QWs is not yet clear, but may be connected to the lower QW growth temperature for the (11-20) InGaN QWs compared to the (0001) polar InGaN QWs.

  5. The planar cubic Cayley graphs

    CERN Document Server

    Georgakopoulos, Agelos

    2018-01-01

    The author obtains a complete description of the planar cubic Cayley graphs, providing an explicit presentation and embedding for each of them. This turns out to be a rich class, comprising several infinite families. He obtains counterexamples to conjectures of Mohar, Bonnington and Watkins. The author's analysis makes the involved graphs accessible to computation, corroborating a conjecture of Droms.

  6. Evidence for graphite-like hexagonal AlN nanosheets epitaxially grown on single crystal Ag(111)

    Energy Technology Data Exchange (ETDEWEB)

    Tsipas, P.; Kassavetis, S.; Tsoutsou, D.; Xenogiannopoulou, E.; Golias, E.; Giamini, S. A.; Dimoulas, A. [National Center for Scientific Research “Demokritos,” 15310 Athens (Greece); Grazianetti, C.; Fanciulli, M. [Laboratorio MDM, IMM-CNR, I-20864, Agrate Brianza (MB) (Italy); Dipartimento di Scienza dei Materiali, Università degli Studi di Milano Bicocca, I-20126, Milano (Italy); Chiappe, D.; Molle, A. [Laboratorio MDM, IMM-CNR, I-20864, Agrate Brianza (MB) (Italy)

    2013-12-16

    Ultrathin (sub-monolayer to 12 monolayers) AlN nanosheets are grown epitaxially by plasma assisted molecular beam epitaxy on Ag(111) single crystals. Electron diffraction and scanning tunneling microscopy provide evidence that AlN on Ag adopts a graphite-like hexagonal structure with a larger lattice constant compared to bulk-like wurtzite AlN. This claim is further supported by ultraviolet photoelectron spectroscopy indicating a reduced energy bandgap as expected for hexagonal AlN.

  7. Magnetic tunnel junctions with AlN and AlNxOy barriers

    International Nuclear Information System (INIS)

    Schwickert, M. M.; Childress, J. R.; Fontana, R. E.; Kellock, A. J.; Rice, P. M.; Ho, M. K.; Thompson, T. J.; Gurney, B. A.

    2001-01-01

    Nonoxide tunnel barriers such as AlN are of interest for magnetic tunnel junctions to avoid the oxidation of the magnetic electrodes. We have investigated the fabrication and properties of thin AlN-based barriers for use in low resistance magnetic tunnel junctions. Electronic, magnetic and structural data of tunnel valves of the form Ta (100 Aa)/PtMn (300 Aa)/CoFe 20 (20 Aa - 25 Aa)/barrier/CoFe 20 (10 - 20 Aa)/NiFe 16 (35 - 40 Aa)/Ta (100 Aa) are presented, where the barrier consists of AlN, AlN x O y or AlN/AlO x with total thicknesses between 8 and 15 Aa. The tunnel junctions were sputter deposited and then lithographically patterned down to 2 x 2μm 2 devices. AlN was deposited by reactive sputtering from an Al target with 20% - 35% N 2 in the Ar sputter gas at room temperature, resulting in stoichiometric growth of AlN x (x=0.50±0.05), as determined by RBS. TEM analysis shows that the as-deposited AlN barrier is crystalline. For AlN barriers and AlN followed by natural O 2 oxidation, we obtain tunnel magnetoresistance >10% with specific junction resistance R j down to 60Ωμm 2 . [copyright] 2001 American Institute of Physics

  8. Enhancement of c-axis texture of AlN films by substrate implantation

    International Nuclear Information System (INIS)

    Chen, C.H.; Yeh, J.M.; Hwang, J.

    2005-01-01

    Highly oriented AlN films are successfully deposited on B + implanted Si(1 1 1) substrates in a radio frequency inductively coupled plasma (RF/ICP) system. The implanted energy and dose used for the B + implanted Si(1 1 1) substrates are 200 keV and 10 15 cm -2 , respectively. The c-axis texture of AlN films can be affected by RF gun power and ion implantation. Experimental results show that the full width at half-maximum (FWHM) of AlN(0 0 2) in the X-ray rocking curve measurements decreases with increasing RF gun power. The optimum condition is at 500 W, where the FWHM of the AlN films deposited on Si(1 1 1) with and without B + implantation are 2.77 and 3.17, respectively. In average, the FWHM of the AlN films on B + implanted Si(1 1 1) are less than those on Si(1 1 1) by a factor of ∼10%. The enhancement of c-axis of AlN films due to B + implantation is attributed to the reduction of AlN grains. Raman spectra also suggest that ion implantation plays a role in reducing the tensile stress in AlN films deposited on B + implanted Si(1 1 1)

  9. Effects of AlN Coating Layer on High Temperature Characteristics of Langasite SAW Sensors

    Directory of Open Access Journals (Sweden)

    Lin Shu

    2016-09-01

    Full Text Available High temperature characteristics of langasite surface acoustic wave (SAW devices coated with an AlN thin film have been investigated in this work. The AlN films were deposited on the prepared SAW devices by mid-frequency magnetron sputtering. The SAW devices coated with AlN films were measured from room temperature to 600 °C. The results show that the SAW devices can work up to 600 °C. The AlN coating layer can protect and improve the performance of the SAW devices at high temperature. The SAW velocity increases with increasing AlN coating layer thickness. The temperature coefficients of frequency (TCF of the prepared SAW devices decrease with increasing thickness of AlN coating layers, while the electromechanical coupling coefficient (K2 of the SAW devices increases with increasing AlN film thickness. The K2 of the SAW devices increases by about 20% from room temperature to 600 °C. The results suggest that AlN coating layer can not only protect the SAW devices from environmental contamination, but also improve the K2 of the SAW devices.

  10. Heme and non-heme iron transporters in non-polarized and polarized cells

    Directory of Open Access Journals (Sweden)

    Yasui Yumiko

    2010-06-01

    Full Text Available Abstract Background Heme and non-heme iron from diet, and recycled iron from hemoglobin are important products of the synthesis of iron-containing molecules. In excess, iron is potentially toxic because it can produce reactive oxygen species through the Fenton reaction. Humans can absorb, transport, store, and recycle iron without an excretory system to remove excess iron. Two candidate heme transporters and two iron transporters have been reported thus far. Heme incorporated into cells is degraded by heme oxygenases (HOs, and the iron product is reutilized by the body. To specify the processes of heme uptake and degradation, and the reutilization of iron, we determined the subcellular localizations of these transporters and HOs. Results In this study, we analyzed the subcellular localizations of 2 isoenzymes of HOs, 4 isoforms of divalent metal transporter 1 (DMT1, and 2 candidate heme transporters--heme carrier protein 1 (HCP1 and heme responsive gene-1 (HRG-1--in non-polarized and polarized cells. In non-polarized cells, HCP1, HRG-1, and DMT1A-I are located in the plasma membrane. In polarized cells, they show distinct localizations: HCP1 and DMT1A-I are located in the apical membrane, whereas HRG-1 is located in the basolateral membrane and lysosome. 16Leu at DMT1A-I N-terminal cytosolic domain was found to be crucial for plasma membrane localization. HOs are located in smooth endoplasmic reticulum and colocalize with NADPH-cytochrome P450 reductase. Conclusions HCP1 and DMT1A-I are localized to the apical membrane, and HRG-1 to the basolateral membrane and lysosome. These findings suggest that HCP1 and DMT1A-I have functions in the uptake of dietary heme and non-heme iron. HRG-1 can transport endocytosed heme from the lysosome into the cytosol. These localization studies support a model in which cytosolic heme can be degraded by HOs, and the resulting iron is exported into tissue fluids via the iron transporter ferroportin 1, which is

  11. Evaluation of Extraction Protocols for Simultaneous Polar and Non-Polar Yeast Metabolite Analysis Using Multivariate Projection Methods

    Directory of Open Access Journals (Sweden)

    Nicolas P. Tambellini

    2013-07-01

    Full Text Available Metabolomic and lipidomic approaches aim to measure metabolites or lipids in the cell. Metabolite extraction is a key step in obtaining useful and reliable data for successful metabolite studies. Significant efforts have been made to identify the optimal extraction protocol for various platforms and biological systems, for both polar and non-polar metabolites. Here we report an approach utilizing chemoinformatics for systematic comparison of protocols to extract both from a single sample of the model yeast organism Saccharomyces cerevisiae. Three chloroform/methanol/water partitioning based extraction protocols found in literature were evaluated for their effectiveness at reproducibly extracting both polar and non-polar metabolites. Fatty acid methyl esters and methoxyamine/trimethylsilyl derivatized aqueous compounds were analyzed by gas chromatography mass spectrometry to evaluate non-polar or polar metabolite analysis. The comparative breadth and amount of recovered metabolites was evaluated using multivariate projection methods. This approach identified an optimal protocol consisting of 64 identified polar metabolites from 105 ion hits and 12 fatty acids recovered, and will potentially attenuate the error and variation associated with combining metabolite profiles from different samples for untargeted analysis with both polar and non-polar analytes. It also confirmed the value of using multivariate projection methods to compare established extraction protocols.

  12. Technetium-99m labelled N,N-ethyldithiocarbamate, a non-polar complex with slow hepatic clearance

    International Nuclear Information System (INIS)

    Pojer, P.M.; Baldas, J.

    1980-05-01

    A sup(99m)Tc-N,N-diethyldithiocarbamate (DDC) complex was prepared using formamidine sulphinic acid as the reducing agent for pertechnetate sup(99m) Tc. The complex was found to be non-polar. In mice the complex localised in the liver and intestines. Urinary excretion was very low and hepatic clearance relatively slow

  13. Piezoelectricity and rotostriction through polar and non-polar coupled instabilities in bismuth-based piezoceramics.

    Science.gov (United States)

    Acosta, Matias; Schmitt, Ljubomira A; Cazorla, Claudio; Studer, Andrew; Zintler, Alexander; Glaum, Julia; Kleebe, Hans-Joachim; Donner, Wolfgang; Hoffman, Mark; Rödel, Jürgen; Hinterstein, Manuel

    2016-07-01

    Coupling of order parameters provides a means to tune functionality in advanced materials including multiferroics, superconductors, and ionic conductors. We demonstrate that the response of a frustrated ferroelectric state leads to coupling between order parameters under electric field depending on grain orientation. The strain of grains oriented along a specific crystallographic direction, 〈h00〉, is caused by converse piezoelectricity originating from a ferrodistortive tetragonal phase. For 〈hhh〉 oriented grains, the strain results from converse piezoelectricity and rotostriction, as indicated by an antiferrodistortive instability that promotes octahedral tilting in a rhombohedral phase. Both strain mechanisms combined lead to a colossal local strain of (2.4 ± 0.1) % and indicate coupling between oxygen octahedral tilting and polarization, here termed "rotopolarization". These findings were confirmed with electromechanical experiments, in situ neutron diffraction, and in situ transmission electron microscopy in 0.75Bi1/2Na1/2TiO3-0.25SrTiO3. This work demonstrates that polar and non-polar instabilities can cooperate to provide colossal functional responses.

  14. Thin film epitaxy and structure property correlations for non-polar ZnO films

    International Nuclear Information System (INIS)

    Pant, P.; Budai, J.D.; Aggarwal, R.; Narayan, Roger J.; Narayan, J.

    2009-01-01

    Heteroepitaxial growth and strain relaxation were investigated in non-polar a-plane (1 1 -2 0)ZnO films grown on r-plane (1 0 -1 2)sapphire substrates in the temperature range 200-700 deg. C by pulsed laser deposition. The lattice misfit in the plane of the film for this orientation varied from -1.26% in [0 0 0 1] to -18.52% in the [-1 1 0 0] direction. The alignment of (1 1 -2 0)ZnO planes parallel to (1 0 -1 2)sapphire planes was confirmed by X-ray diffraction θ-2θ scans over the entire temperature range. X-ray φ-scans revealed the epitaxial relationship:[0 0 0 1]ZnO-parallel [-1 1 0 1]sap; [-1 1 0 0]ZnO-parallel [-1 -1 2 0]sap. Depending on the growth temperature, variations in the structural, optical and electrical properties were observed in the grown films. Room temperature photoluminescence for films grown at 700 deg. C shows a strong band-edge emission. The ratio of the band-edge emission to green band emission is 135:1, indicating reduced defects and excellent optical quality of the films. The resistivity data for the films grown at 700 deg. C shows semiconducting behavior with room temperature resistivity of 2.2 x 10 -3 Ω-cm.

  15. Nanospikes functionalization as a universal strategy to disperse hydrophilic particles in non-polar media

    Science.gov (United States)

    Hang, Tian; Chen, Hui-Jiuan; Wang, Ji; Lin, Di-an; Wu, Jiangming; Liu, Di; Cao, Yuhong; Yang, Chengduan; Liu, Chenglin; Xiao, Shuai; Gu, Meilin; Pan, Shuolin; Wu, Mei X.; Xie, Xi

    2018-05-01

    Dispersion of hydrophilic particles in non-polar media has many important applications yet remains difficult. Surfactant or amphiphilic functionalization was conventionally applied to disperse particles but is highly dependent on the particle/solvent system and may induce unfavorable effects and impact particle hydrophilic nature. Recently 2 μm size polystyrene microbeads coated with ZnO nanospikes have been reported to display anomalous dispersity in phobic media without using surfactant or amphiphilic functionalization. However, due to the lack of understanding whether this phenomenon was applicable to a wider range of conditions, little application has been derived from it. Here the anomalous dispersity phenomenons of hydrophilic microparticles covered with nanospikes were systematically assessed at various conditions including different particle sizes, material compositions, particle morphologies, solvent hydrophobicities, and surface polar groups. Microparticles were functionalized with nanospikes through hydrothermal route, followed by dispersity test in hydrophobic media. The results suggest nanospikes consistently prevent particle aggregation in various particle or solvent conditions, indicating the universal applicability of the anomalous dispersion phenomenons. This work provides insight on the anomalous dispersity of hydrophilic particles in various systems and offers potential application to use this method for surfactant-free dispersions.

  16. Composition of the non-polar extracts and antimicrobial activity of Chorisia insignis HBK. leaves

    Directory of Open Access Journals (Sweden)

    Salma Ahmed Mahmoud El Sawi

    2014-12-01

    Full Text Available Objective: To investigate the chemical constituents of the petroleum ether extract and the ether fraction of the 70% ethanol extract of Chorisia insignis HBK. leaves, as well as screen its antimicrobial activity. Methods: Different chromatographic methods were applied to investigate the non-polar extracts and the diffusion assay method was applied to study the antimicrobial activity. Results: A total of 50 compounds from the unsaponifiable matter and 20 fatty acid methyl esters were identified from the petroleum ether extract by GC/MS analysis. n-Hentriacontane, n-tritriacontane, stigmastanol, 3-methoxy-5, 6-dihydrostigmasterol, 7,8-dihydroergosterol, 4-methylcholesterol, cholestanol, multiflorenol, cholest-5-en-3-one, cholest-6-one, 5,6- dihydroergosterol, stigmasterol, dihydroalbigenin and 11-methyl-Δ5,7,9,15,17,23-triacont-hex-ene were isolated from the petroleum ether extract. Methyl heptacosanoate and quinic acid ester of rhamnose were isolated from the ether fraction of the 70% ethanol extract. Antimicrobial activity of the total alcohol extract and the successive fractions showed that the ether and the ethyl acetate fractions have potent antibacterial activity against Bacillus subtilis and Bacillus cereus. Conclusions: The ether and the ethyl acetate fractions could be used in pharmaceutical formulations as antibacterial agents against Bacillus subtilis and Bacillus cereus, and further clinical trials should be performed in order to support the above investigations.

  17. An Abel type cubic system

    Directory of Open Access Journals (Sweden)

    Gary R. Nicklason

    2015-07-01

    Full Text Available We consider center conditions for plane polynomial systems of Abel type consisting of a linear center perturbed by the sum of 2 homogeneous polynomials of degrees n and 2n-1 where $n \\ge 2$. Using properties of Abel equations we obtain two general systems valid for arbitrary values on n. For the cubic n=2 systems we find several sets of new center conditions, some of which show that the results in a paper by Hill, Lloyd and Pearson which were conjectured to be complete are in fact not complete. We also present a particular system which appears to be a counterexample to a conjecture by Zoladek et al. regarding rational reversibility in cubic polynomial systems.

  18. Cubication of conservative nonlinear oscillators

    International Nuclear Information System (INIS)

    Belendez, Augusto; Alvarez, Mariela L; Fernandez, Elena; Pascual, Inmaculada

    2009-01-01

    A cubication procedure of the nonlinear differential equation for conservative nonlinear oscillators is analysed and discussed. This scheme is based on the Chebyshev series expansion of the restoring force, and this allows us to approximate the original nonlinear differential equation by a Duffing equation in which the coefficients for the linear and cubic terms depend on the initial amplitude, A, while in a Taylor expansion of the restoring force these coefficients are independent of A. The replacement of the original nonlinear equation by an approximate Duffing equation allows us to obtain an approximate frequency-amplitude relation as a function of the complete elliptic integral of the first kind. Some conservative nonlinear oscillators are analysed to illustrate the usefulness and effectiveness of this scheme.

  19. Numbers for reducible cubic scrolls

    Directory of Open Access Journals (Sweden)

    Israel Vainsencher

    2004-12-01

    Full Text Available We show how to compute the number of reducible cubic scrolls of codimension 2 in (math blackboard symbol Pn incident to the appropriate number of linear spaces.Mostramos como calcular o número de rolos cúbicos redutíveis de codimensão 2 em (math blackboard symbol Pn incidentes a espaços lineares apropriados.

  20. Randomized Block Cubic Newton Method

    KAUST Repository

    Doikov, Nikita; Richtarik, Peter

    2018-01-01

    We study the problem of minimizing the sum of three convex functions: a differentiable, twice-differentiable and a non-smooth term in a high dimensional setting. To this effect we propose and analyze a randomized block cubic Newton (RBCN) method, which in each iteration builds a model of the objective function formed as the sum of the natural models of its three components: a linear model with a quadratic regularizer for the differentiable term, a quadratic model with a cubic regularizer for the twice differentiable term, and perfect (proximal) model for the nonsmooth term. Our method in each iteration minimizes the model over a random subset of blocks of the search variable. RBCN is the first algorithm with these properties, generalizing several existing methods, matching the best known bounds in all special cases. We establish ${\\cal O}(1/\\epsilon)$, ${\\cal O}(1/\\sqrt{\\epsilon})$ and ${\\cal O}(\\log (1/\\epsilon))$ rates under different assumptions on the component functions. Lastly, we show numerically that our method outperforms the state-of-the-art on a variety of machine learning problems, including cubically regularized least-squares, logistic regression with constraints, and Poisson regression.

  1. Randomized Block Cubic Newton Method

    KAUST Repository

    Doikov, Nikita

    2018-02-12

    We study the problem of minimizing the sum of three convex functions: a differentiable, twice-differentiable and a non-smooth term in a high dimensional setting. To this effect we propose and analyze a randomized block cubic Newton (RBCN) method, which in each iteration builds a model of the objective function formed as the sum of the natural models of its three components: a linear model with a quadratic regularizer for the differentiable term, a quadratic model with a cubic regularizer for the twice differentiable term, and perfect (proximal) model for the nonsmooth term. Our method in each iteration minimizes the model over a random subset of blocks of the search variable. RBCN is the first algorithm with these properties, generalizing several existing methods, matching the best known bounds in all special cases. We establish ${\\\\cal O}(1/\\\\epsilon)$, ${\\\\cal O}(1/\\\\sqrt{\\\\epsilon})$ and ${\\\\cal O}(\\\\log (1/\\\\epsilon))$ rates under different assumptions on the component functions. Lastly, we show numerically that our method outperforms the state-of-the-art on a variety of machine learning problems, including cubically regularized least-squares, logistic regression with constraints, and Poisson regression.

  2. Growth of AlN films and their characterization

    Energy Technology Data Exchange (ETDEWEB)

    Jain, Rakesh B.; Gao, Ying; Zhang, Jianping; Qhaleed Fareed, R.S.; Gaska, Remis [Sensor Electronic Technology, Inc., 1195 Atlas Rd., Columbia, SC 29209 (United States); Li, Jiawei; Arjunan, Arulchakkravarthi; Yang, Jinwei; Asif Khan, M. [Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208 (United States); Kuokstis, Edmundas [MTMI, Vilnius University, Vilnius (Lithuania)

    2006-06-15

    Single crystal AlN layers have been produced by migration enhanced metal organic chemical vapor deposition (MEMOCVD), hydride vapor phase epitaxy (HVPE) and their combination. The growth was carried out on 2'' basal plane sapphire substrates. In MEMOCVD, the duration and waveforms of precursors were varied to achieve better surface mobility and thus better atomic incorporation. It resulted in superior layer quality templates with the narrowest (002) X-ray rocking curve full width half maximum (FWHM). Such high quality AlN templates were used as seeds for subsequent HVPE growth. Thick films with thickness ranging from 1-25 {mu}m have been grown by HVPE with growth rates as high as 200 {mu}m/min, highest ever reported. Films grown by the two methods have been extensively characterized by Nomarski microscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM), high-resolution X-ray diffractometry (HRXRD), and photoluminescence (PL). (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Effects of AlN nucleation layers on the growth of AlN films using high temperature hydride vapor phase epitaxy

    International Nuclear Information System (INIS)

    Balaji, M.; Claudel, A.; Fellmann, V.; Gélard, I.; Blanquet, E.; Boichot, R.; Pierret, A.

    2012-01-01

    Highlights: ► Growth of AlN Nucleation layers and its effect on high temperature AlN films quality were investigated. ► AlN nucleation layers stabilizes the epitaxial growth of AlN and improves the surface morphology of AlN films. ► Increasing growth temperature of AlN NLs as well as AlN films improves the structural quality and limits the formation of cracks. - Abstract: AlN layers were grown on c-plane sapphire substrates with AlN nucleation layers (NLs) using high temperature hydride vapor phase epitaxy (HT-HVPE). Insertion of low temperature NLs, as those typically used in MOVPE process, prior to the high temperature AlN (HT-AlN) layers has been investigated. The NLs surface morphology was studied by atomic force microscopy (AFM) and NLs thickness was measured by X-ray reflectivity. Increasing nucleation layer deposition temperature from 650 to 850 °C has been found to promote the growth of c-oriented epitaxial HT-AlN layers instead of polycrystalline layers. The growth of polycrystalline layers has been related to the formation of dis-oriented crystallites. The density of such disoriented crystallites has been found to decrease while increasing NLs deposition temperature. The HT-AlN layers have been characterized by X-ray diffraction θ − 2θ scan and (0 0 0 2) rocking curve measurement, Raman and photoluminescence spectroscopies, AFM and field emission scanning electron microscopy. Increasing the growth temperature of HT-AlN layers from 1200 to 1400 °C using a NL grown at 850 °C improves the structural quality as well as the surface morphology. As a matter of fact, full-width at half-maximum (FWHM) of 0 0 0 2 reflections was improved from 1900 to 864 arcsec for 1200 °C and 1400 °C, respectively. Related RMS roughness also found to decrease from 10 to 5.6 nm.

  4. Cubic colloids : Synthesis, functionalization and applications

    NARCIS (Netherlands)

    Castillo, S.I.R.

    2015-01-01

    This thesis is a study on cubic colloids: micron-sized cubic particles with rounded corners (cubic superballs). Owing to their shape, particle packing for cubes is more efficient than for spheres and results in fascinating phase and packing behavior. For our cubes, the particle volume fraction when

  5. Adsorption properties of AlN on Si(111) surface: A density functional study

    Science.gov (United States)

    Yuan, Yinmei; Zuo, Ran; Mao, Keke; Tang, Binlong; Zhang, Zhou; Liu, Jun; Zhong, Tingting

    2018-04-01

    In the process of preparing GaN on Si substrate by MOCVD, an AlN buffer layer is very important. In this study, we conducted density functional theory calculations on the adsorption of AlN molecule on Si(111)-(2 × 2) surface, with the AlN molecule located horizontally or vertically above Si(111) surface at different adsorption sites. The calculations revealed that the lowest adsorption energy was at the N-top-Al-bridge site in the horizontal configuration, with the narrowest band gap, indicating that it was the most preferential adsorption growth status of AlN. In the vertical configurations, N adatom was more reactive and convenient to form bonds with the topmost Si atoms than Al adatom. When the N-end of the AlN molecule was located downward, the hollow site was the preferred adsorption site; when the Al-end was located downward, the bridge site was the most energetically favorable. Moreover, we investigated some electronic properties such as partial density of states, electron density difference, Mulliken populations, etc., revealing the microscale mechanism for AlN adsorption on Si(111) surface and providing theoretical support for adjusting the processing parameters during AlN or GaN production.

  6. Metalorganic vapor phase epitaxy of AlN on sapphire with low etch pit density

    Science.gov (United States)

    Koleske, D. D.; Figiel, J. J.; Alliman, D. L.; Gunning, B. P.; Kempisty, J. M.; Creighton, J. R.; Mishima, A.; Ikenaga, K.

    2017-06-01

    Using metalorganic vapor phase epitaxy, methods were developed to achieve AlN films on sapphire with low etch pit density (EPD). Key to this achievement was using the same AlN growth recipe and only varying the pre-growth conditioning of the quartz-ware. After AlN growth, the quartz-ware was removed from the growth chamber and either exposed to room air or moved into the N2 purged glove box and exposed to H2O vapor. After the quartz-ware was exposed to room air or H2O, the AlN film growth was found to be more reproducible, resulting in films with (0002) and (10-12) x-ray diffraction (XRD) rocking curve linewidths of 200 and 500 arc sec, respectively, and EPDs < 100 cm-2. The EPD was found to correlate with (0002) linewidths, suggesting that the etch pits are associated with open core screw dislocations similar to GaN films. Once reproducible AlN conditions were established using the H2O pre-treatment, it was found that even small doses of trimethylaluminum (TMAl)/NH3 on the quartz-ware surfaces generated AlN films with higher EPDs. The presence of these residual TMAl/NH3-derived coatings in metalorganic vapor phase epitaxy (MOVPE) systems and their impact on the sapphire surface during heating might explain why reproducible growth of AlN on sapphire is difficult.

  7. Growth of high quality AlN films on CVD diamond by RF reactive magnetron sputtering

    Science.gov (United States)

    Chen, Liang-xian; Liu, Hao; Liu, Sheng; Li, Cheng-ming; Wang, Yi-chao; An, Kang; Hua, Chen-yi; Liu, Jin-long; Wei, Jun-jun; Hei, Li-fu; Lv, Fan-xiu

    2018-02-01

    A highly oriented AlN layer has been successfully grown along the c-axis on a polycrystalline chemical vapor deposited (CVD) diamond by RF reactive magnetron sputtering. Structural, morphological and mechanical properties of the heterostructure were investigated by Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), Transmission Electron Microscopy (TEM), X-ray diffraction (XRD), Nano-indentation and Four-probe meter. A compact AlN film was demonstrated on the diamond layer, showing columnar grains and a low surface roughness of 1.4 nm. TEM results revealed a sharp AlN/diamond interface, which was characterized by the presence of a distinct 10 nm thick buffer layer resulting from the initial AlN growth stage. The FWHM of AlN (002) diffraction peak and its rocking curve are as low as 0.41° and 3.35° respectively, indicating a highly preferred orientation along the c-axis. AlN sputtered films deposited on glass substrates show a higher bulk resistivity (up to 3 × 1012 Ω cm), compared to AlN films deposited on diamond (∼1010 Ω cm). Finally, the film hardness and Young's modulus of AlN films on diamond are 25.8 GPa and 489.5 GPa, respectively.

  8. Nitrobenzene anti-parallel dimer formation in non-polar solvents

    Directory of Open Access Journals (Sweden)

    Toshiyuki Shikata

    2014-06-01

    Full Text Available We investigated the dielectric and depolarized Rayleigh scattering behaviors of nitrobenzene (NO2-Bz, which is a benzene mono-substituted with a planar molecular frame bearing the large electric dipole moment 4.0 D, in non-polar solvents solutions, such as tetrachloromethane and benzene, at up to 3 THz for the dielectric measurements and 8 THz for the scattering experiments at 20 °C. The dielectric relaxation strength of the system was substantially smaller than the proportionality to the concentration in a concentrated regime and showed a Kirkwood correlation factor markedly lower than unity; gK ∼ 0.65. This observation revealed that NO2-Bz has a tendency to form dimers, (NO2-Bz2, in anti-parallel configurations for the dipole moment with increasing concentration of the two solvents. Both the dielectric and scattering data exhibited fast and slow Debye-type relaxation modes with the characteristic time constants ∼7 and ∼50 ps in a concentrated regime (∼15 and ∼30 ps in a dilute regime, respectively. The fast mode was simply attributed to the rotational motion of the (monomeric NO2-Bz. However, the magnitude of the slow mode was proportional to the square of the concentration in the dilute regime; thus, the mode was assigned to the anti-parallel dimer, (NO2-Bz2, dissociation process, and the slow relaxation time was attributed to the anti-parallel dimer lifetime. The concentration dependencies of both the dielectric and scattering data show that the NO2-Bz molecular processes are controlled through a chemical equilibrium between monomers and anti-parallel dimers, 2NO2-Bz ↔ (NO2-Bz2, due to a strong dipole-dipole interaction between nitro groups.

  9. Enhancing the piezoelectric properties of flexible hybrid AlN materials using semi-crystalline parylene

    Science.gov (United States)

    Jackson, Nathan; Mathewson, Alan

    2017-04-01

    Flexible piezoelectric materials are desired for numerous applications including biomedical, wearable, and flexible electronics. However, most flexible piezoelectric materials are not compatible with CMOS fabrication technology, which is desired for most MEMS applications. This paper reports on the development of a hybrid flexible piezoelectric material consisting of aluminium nitride (AlN) and a semi-crystalline polymer substrate. Various types of semi-crystalline parylene and polyimide materials were investigated as the polymer substrate. The crystallinity and surfaces of the polymer substrates were modified by micro-roughening and annealing in order to determine the effects on the AlN quality. The AlN crystallinity and piezoelectric properties decreased when the polymer surfaces were treated with O2 plasma. However, increasing the crystallinity of the parylene substrate prior to deposition of AlN caused enhanced c-axis (002) AlN crystallinity and piezoelectric response of the AlN. Piezoelectric properties of 200 °C annealed parylene-N substrate resulted in an AlN d 33 value of 4.87 pm V-1 compared to 2.17 pm V-1 for AlN on polyimide and 4.0 pm V-1 for unannealed AlN/parylene-N. The electrical response measurements to an applied force demonstrated that the parylene/AlN hybrid material had higher V pp (0.918 V) than commercial flexible piezoelectric material (PVDF) (V pp 0.36 V). The results in this paper demonstrate that the piezoelectric properties of a flexible AlN hybrid material can be enhanced by increasing the crystallinity of the polymer substrate, and the enhanced properties can function better than previous flexible piezoelectrics.

  10. Production of AlN films: ion nitriding versus PVD coating

    International Nuclear Information System (INIS)

    Figueroa, U.; Salas, O.; Oseguera, J.

    2004-01-01

    The properties of AlN render this material very attractive for optical, electronic, and tribological applications; thus, a great interest exists for the production of thin AlN films on a variety of substrates. Many methods have been developed for this purpose where two processes stand out: plasma-assisted nitriding (PAN) and PVD coating. In the present paper, we compare the processing advantages and disadvantages of both methods in terms of the characteristics of the layers formed. AlN production by ion nitriding is very sensitive to presputtering cleaning and working pressure. Layers several micrometers thick can be produced in a few hours, which are formed by a fine mixture of Al+AlN. The surface morphology of the layers is rather rough. On the other hand, formation of PVD AlN coatings by DC reactive magnetron sputtering is more readily performed and better controlled than in ion nitriding. PVD results in macroscopically smoother AlN films and with similar thickness than the ion nitrided layers but produced in shorter processing times. The morphology of the PVD AlN layers is columnar with a fairly flat surface. Mechanisms for the formation of both types of AlN layers are proposed. One of the main differences between the two processes that explain the different AlN layer morphologies is the energy of the particles that arrive at the substrate. Considering only the processing advantages and the morphology of the AlN layers formed, PVD performs better than PAN processing

  11. Understanding the growth of micro and nano-crystalline AlN by thermal plasma process

    Science.gov (United States)

    Kanhe, Nilesh S.; Nawale, Ashok B.; Gawade, Rupesh L.; Puranik, Vedavati G.; Bhoraskar, Sudha V.; Das, Asoka K.; Mathe, Vikas L.

    2012-01-01

    We report the studies related to the growth of crystalline AlN in a DC thermal plasma reactor, operated by a transferred arc plasma torch. The reactor is capable of producing the nanoparticles of Al and AlN depending on the composition of the reacting gas. Al and AlN micro crystals are formed at the anode placed on the graphite and nano crystalline Al and AlN gets deposited on the inner surface of the plasma reactor. X-ray diffraction, Raman spectroscopy analysis, single crystal X-ray diffraction and TGA-DTA techniques are used to infer the purity of post process crystals as a hexagonal AlN. The average particle size using SEM was found to be around 30 μm. The morphology of nanoparticles of Al and AlN, nucleated by gas phase condensation in a homogeneous medium were studied by transmission electron microscopy analysis. The particle ranged in size between 15 and 80 nm in diameter. The possible growth mechanism of crystalline AlN at the anode has been explained on the basis of non-equilibrium processes in the core of the plasma and steep temperature gradient near its periphery. The gas phase species of AlN and various constituent were computed using Murphy code based on minimization of free energy. The process provides 50% yield of microcrystalline AlN and remaining of Al at anode and that of nanocrystalline h-AlN and c-Al collected from the walls of the chamber is about 33% and 67%, respectively.

  12. Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy.

    Science.gov (United States)

    Sang, Ling; Zhu, Qin Sheng; Yang, Shao Yan; Liu, Gui Peng; Li, Hui Jie; Wei, Hong Yuan; Jiao, Chun Mei; Liu, Shu Man; Wang, Zhan Guo; Zhou, Xiao Wei; Mao, Wei; Hao, Yue; Shen, Bo

    2014-01-01

    The band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterojunctions are measured by X-ray photoemission spectroscopy. A large forward-backward asymmetry is observed in the non-polar GaN/AlN and AlN/GaN heterojunctions. The valence-band offsets in the non-polar A-plane GaN/AlN and AlN/GaN heterojunctions are determined to be 1.33 ± 0.16 and 0.73 ± 0.16 eV, respectively. The large valence-band offset difference of 0.6 eV between the non-polar GaN/AlN and AlN/GaN heterojunctions is considered to be due to piezoelectric strain effect in the non-polar heterojunction overlayers.

  13. Cubic metaplectic forms and theta functions

    CERN Document Server

    Proskurin, Nikolai

    1998-01-01

    The book is an introduction to the theory of cubic metaplectic forms on the 3-dimensional hyperbolic space and the author's research on cubic metaplectic forms on special linear and symplectic groups of rank 2. The topics include: Kubota and Bass-Milnor-Serre homomorphisms, cubic metaplectic Eisenstein series, cubic theta functions, Whittaker functions. A special method is developed and applied to find Fourier coefficients of the Eisenstein series and cubic theta functions. The book is intended for readers, with beginning graduate-level background, interested in further research in the theory of metaplectic forms and in possible applications.

  14. Cathodoluminescence of cubic boron nitride

    International Nuclear Information System (INIS)

    Tkachev, V.D.; Shipilo, V.B.; Zajtsev, A.M.

    1985-01-01

    Three optically active defects are detected in mono- and polycrystal cubic boron nitride (β-BN). Analysis of intensity of temperature dependences, halfwidth and energy shift of 1.76 eV narrow phononless line (center GC-1) makes it possible to interprete the observed cathodoluminescence spectra an optical analog of the Moessbaner effect. Comparison of the obtained results with the known data for diamond monocrystals makes it possible to suggest that the detected center GC-1 is a nitrogen vacancy . The conclusion, concerning the Moessbauer optical spectra application, is made to analyze structural perfection of β-BN crystal lattice

  15. Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Davies, M. J.; Dawson, P.; Hammersley, S. [School of Physics and Astronomy, Photon Science Institute, University of Manchester, M13 9PL Manchester (United Kingdom); Zhu, T.; Kappers, M. J.; Humphreys, C. J.; Oliver, R. A. [Department of Material Science and Metallurgy, 27 Charles Babbage Road, University of Cambridge, Cambridge CB3 0FS (United Kingdom)

    2016-06-20

    We report on a comparative study of efficiency droop in polar and non-polar InGaN quantum well structures at T = 10 K. To ensure that the experiments were carried out with identical carrier densities for any particular excitation power density, we used laser pulses of duration ∼100 fs at a repetition rate of 400 kHz. For both types of structures, efficiency droop was observed to occur for carrier densities of above 7 × 10{sup 11 }cm{sup −2 }pulse{sup −1} per quantum well; also both structures exhibited similar spectral broadening in the droop regime. These results show that efficiency droop is intrinsic in InGaN quantum wells, whether polar or non-polar, and is a function, specifically, of carrier density.

  16. Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells

    International Nuclear Information System (INIS)

    Davies, M. J.; Dawson, P.; Hammersley, S.; Zhu, T.; Kappers, M. J.; Humphreys, C. J.; Oliver, R. A.

    2016-01-01

    We report on a comparative study of efficiency droop in polar and non-polar InGaN quantum well structures at T = 10 K. To ensure that the experiments were carried out with identical carrier densities for any particular excitation power density, we used laser pulses of duration ∼100 fs at a repetition rate of 400 kHz. For both types of structures, efficiency droop was observed to occur for carrier densities of above 7 × 10 11  cm −2  pulse −1 per quantum well; also both structures exhibited similar spectral broadening in the droop regime. These results show that efficiency droop is intrinsic in InGaN quantum wells, whether polar or non-polar, and is a function, specifically, of carrier density.

  17. Comparative study of initial growth stage in PVT growth of AlN on SiC and on native AlN substrates

    Energy Technology Data Exchange (ETDEWEB)

    Epelbaum, B.M.; Heimann, P.; Bickermann, M.; Winnacker, A. [Department of Materials Science 6, University of Erlangen-Nuernberg, Martensstr. 7, 91058 Erlangen (Germany)

    2005-05-01

    The main issue in homoepitaxial growth of aluminum nitride (AlN) on native seed substrates appears to be aluminum oxynitride poisoning of seed surface leading to polycrystalline growth at 1750-1850 C. This is well below the lowest growth temperature appropriate for physical vapor transport (PVT) of bulk AlN, which is about 2150 C. Contrary, heteroepitaxial growth of AlN on SiC is relatively easy to achieve because of natural formation of a thin molten layer on the seed surface and VLS growth of AlN via the molten buffer layer. The most critical issue of AlN growth on SiC is cracking of the grown layer upon cooling as a result of different thermal expansion. Optimization of seeded growth process can be achieved by proper choice of SiC seed orientation and by use of ultra-pure starting material. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. studies dielectric behaviour of some long chain alcohols and their mixtures with a non-polar solvent at various concentration

    International Nuclear Information System (INIS)

    Yaqub, M.; Ahmed, S.S.; Hussain, A.

    2006-01-01

    Dielectric constant, refractive index and the Kirkwood linear correlation factor of 1-propanol, 1-butanol and 1-pentanol in mixtures with carbon tetrachloride at various concentration have been measured at fixed frequency (100 KHz) at 303.15 K. For the study of dielectric properties of polar molecules in a non-polar solvent at different concentrations, polarization per unit volume and excess free-energy of mixing were evaluated at this temperature. In order to study the association of polar molecules in such a non-polar solvent, the Kirkwood correlation factor (g) between molecular pairs, which exists due to the hydrogen bond association suggesting the presence of some dimension in the liquid phase with a number of dimmers, was determined. The refractive index and dielectric constant measurements are expected to shed some light on the configuration of molecules in various mixtures, and give some idea about the specific interactions between components, which decrese with the increase in the concentration of alcohol. All the three mixtures showed different behaviour for the value of correlation factor (g) as a function of concentration. The response of 1-pentanol was broadly identical to that of small chain alcohols. The different behaviour of the correlation factor (g) was interpreted in terms of the Kirkwood-Frohlich theory, as it takes into account, explicitly, such type of short and long range interactions of a mixture of polar molecules with non-polar solvents. (author)

  19. AlN nanoparticle-reinforced nanocrystalline Al matrix composites: Fabrication and mechanical properties

    International Nuclear Information System (INIS)

    Liu, Y.Q.; Cong, H.T.; Wang, W.; Sun, C.H.; Cheng, H.M.

    2009-01-01

    To improve the specific strength and stiffness of Al-based composites, AlN/Al nanoparticles were in-situ synthesized by arc plasma evaporation of Al in nitrogen atmosphere and consolidated by hot-pressing to fabricate AlN nanoparticle-reinforced nanocrystalline Al composites (0-39 vol.% AlN). Microstructure characterization shows that AlN nanoparticles homogeneously distribute in the matrix of Al nanocrystalline, which forms atomically bonded interfaces of AlN/Al. The hardness and the elastic modulus of the nanocomposite have been improved dramatically, up to 3.48 GPa and 142 GPa, respectively. Such improvement is believed to result from the grain refinement strengthening and the interface strengthening (load transfer) between the Al matrix and AlN nanoparticles

  20. AlN metal-semiconductor field-effect transistors using Si-ion implantation

    Science.gov (United States)

    Okumura, Hironori; Suihkonen, Sami; Lemettinen, Jori; Uedono, Akira; Zhang, Yuhao; Piedra, Daniel; Palacios, Tomás

    2018-04-01

    We report on the electrical characterization of Si-ion implanted AlN layers and the first demonstration of metal-semiconductor field-effect transistors (MESFETs) with an ion-implanted AlN channel. The ion-implanted AlN layers with Si dose of 5 × 1014 cm-2 exhibit n-type characteristics after thermal annealing at 1230 °C. The ion-implanted AlN MESFETs provide good drain current saturation and stable pinch-off operation even at 250 °C. The off-state breakdown voltage is 2370 V for drain-to-gate spacing of 25 µm. These results show the great potential of AlN-channel transistors for high-temperature and high-power applications.

  1. Valence and conduction band offsets of β-Ga2O3/AlN heterojunction

    KAUST Repository

    Sun, Haiding; Torres Castanedo, C. G.; Liu, Kaikai; Li, Kuang-Hui; Guo, Wenzhe; Lin, Ronghui; Liu, Xinwei; Li, Jingtao; Li, Xiaohang

    2017-01-01

    Both β-Ga2O3 and wurtzite AlN have wide bandgaps of 4.5–4.9 and 6.1 eV, respectively. We calculated the in-plane lattice mismatch between the (−201) plane of β-Ga2O3 and the (0002) plane of AlN, which was found to be 2.4%. This is the smallest

  2. Cathodoluminescence of cubic boron nitride

    International Nuclear Information System (INIS)

    Tkachev, V.D.; Shipilo, V.B.; Zaitsev, A.M.

    1985-01-01

    Three types of optically active defect were observed in single-crystal and polycrystalline cubic boron nitride (β-BN). An analysis of the temperature dependences of the intensity, half-width, and energy shift of a narrow zero-phonon line at 1.76 eV (GC-1 center) made it possible to interpret the observed cathodoluminescence spectra as an optical analog of the Moessbauer effect. A comparison of the results obtained in the present study with the available data on diamond single crystals made it possible to identify the observed GC-1 center as a nitrogen vacancy. It was concluded that optical Moessbauer-type spectra can be used to analyze structure defects in the crystal lattice of β-BN

  3. Martensitic cubic → tetragonal transition

    International Nuclear Information System (INIS)

    Schumann, H.

    1983-01-01

    Indium-thallium alloys containing 14 to 30% At. Tl have a cubic face-centred beta phase wich changes into a tetragonal face-centred alpha martensite during solidification. The martensite contains twin crystals that are large enough to be seen by means of a light microscope. The phenomenological crystallographic martensite theory was used to calculate Miller's index of the habit plane, the formation of the surface relief, the orientation relations and the critical thickness ratio of the twins. In a beta monocrystal frequently only one of the 24 crystallographic possible habit planes are formed at one end of the sample and migrate through the whole crystal when the temperature drops. Externally applied tension and compression influence in different ways the direction in which the habit plane moves and can even destroy the twinned structure, i.e. they can modify the substructure of the martensite crystal. This induces superelasticity, an effect that has also been described quantitatively. (author)

  4. Flexible-CMOS and biocompatible piezoelectric AlN material for MEMS applications

    International Nuclear Information System (INIS)

    Jackson, Nathan; Keeney, Lynette; Mathewson, Alan

    2013-01-01

    The development of a CMOS compatible flexible piezoelectric material is desired for numerous applications and in particular for biomedical MEMS devices. Aluminum nitride (AlN) is the most commonly used CMOS compatible piezoelectric material, which is typically deposited on Si in order to enhance the c-axis (002) crystal orientation which gives AlN its high piezoelectric properties. This paper reports on the successful deposition of AlN on polyimide (PI-2611) material. The AlN deposited has a FWHM (002) value of 5.1° and a piezoelectric d 33 value of 1.12 pm V −1 , and SEM images show high quality columnar grains. The highly crystalline AlN material is due to the semi-crystalline properties of the polyimide film used. Cytotoxicity testing showed the AlN/polyimide material to be non-toxic to 3T3 cells and primary neurons. Surface properties of the AlN/polyimide film were evaluated as they have a significant effect on the adhesion of cells to the film. The results show neurons adhering to the AlN surface. The results of this paper show the characterization of a new flexible-CMOS and biocompatible AlN/polyimide material for MEMS devices with improved crystallinity and piezoelectric properties. (paper)

  5. Synthesis of c-axis oriented AlN thin films on different substrates: A review

    International Nuclear Information System (INIS)

    Iriarte, G.F.; Rodriguez, J.G.; Calle, F.

    2010-01-01

    Highly c-axis oriented AlN thin films have been deposited by reactive sputtering on different substrates. The crystallographic properties of layered film structures consisting of a piezoelectric layer, aluminum nitride (AlN), synthesized on a variety of substrates, have been examined. Aluminum nitride thin films have been deposited by reactive pulsed-DC magnetron sputtering using an aluminum target in an Ar/N 2 gas mixture. The influence of the most critical deposition parameters on the AlN thin film crystallography has been investigated by means of X-ray diffraction (XRD) analysis of the rocking curve Full-Width at Half Maximum (FWHM) of the AlN-(0 0 0 2) peak. The relationship between the substrate, the synthesis parameters and the crystallographic orientation of the AlN thin films is discussed. A guide is provided showing how to optimize these conditions to obtain highly c-axis oriented AlN thin films on substrates of different nature.

  6. First-principles study on stability, and growth strategies of small AlnZr (n=1-9) clusters

    Science.gov (United States)

    Li, Zhi; Zhou, Zhonghao; Wang, Hongbin; Li, Shengli; Zhao, Zhen

    2016-09-01

    The geometries, relative stability as well as growth strategies of the AlnZr (n=1-9) clusters are investigated with spin polarized density functional theory: BLYP. The results reveal that the AlnZr clusters are more likely to form the dense accumulation structures than the AlN (N=1-10) clusters. The average binding energies of AlnZr are higher than those of AlN clusters. The AlnZr (n=3, 5, and 7) clusters are more stable than others by the differences of the total binding energies. Mülliken population analysis for the AlnZr clusters shows that the electron's adsorption ability of Zr is slightly lower than that of Al except for AlZr cluster. Local peaks of the HOMO-LUMO gap curve are found at n=3, 5, and 7. The reaction energies of AlnZr are higher, which means that AlnZr clusters are easier to react with Al clusters. Zr atom preferential reacts with Al2 cluster. Local peaks of the magnetic dipole moments are found at n=2, 5, and 8.

  7. Topics in Cubic Special Geometry

    CERN Document Server

    Bellucci, Stefano; Roychowdhury, Raju

    2011-01-01

    We reconsider the sub-leading quantum perturbative corrections to N=2 cubic special Kaehler geometries. Imposing the invariance under axion-shifts, all such corrections (but the imaginary constant one) can be introduced or removed through suitable, lower unitriangular symplectic transformations, dubbed Peccei-Quinn (PQ) transformations. Since PQ transformations do not belong to the d=4 U-duality group G4, in symmetric cases they generally have a non-trivial action on the unique quartic invariant polynomial I4 of the charge representation R of G4. This leads to interesting phenomena in relation to theory of extremal black hole attractors; namely, the possibility to make transitions between different charge orbits of R, with corresponding change of the supersymmetry properties of the supported attractor solutions. Furthermore, a suitable action of PQ transformations can also set I4 to zero, or vice versa it can generate a non-vanishing I4: this corresponds to transitions between "large" and "small" charge orbit...

  8. Non-polar InGaN quantum dot emission with crystal-axis oriented linear polarization

    Energy Technology Data Exchange (ETDEWEB)

    Reid, Benjamin P. L., E-mail: benjamin.reid@physics.ox.ac.uk; Chan, Christopher C. S.; Taylor, Robert A. [Clarendon Laboratory, Department of Physics, University of Oxford, Oxford OX1 3PU (United Kingdom); Kocher, Claudius [Department of Physics, University of Konstanz, Konstanz 78457 (Germany); Zhu, Tongtong; Oehler, Fabrice; Oliver, Rachel A. [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)

    2015-04-27

    Polarization sensitive photoluminescence is performed on single non-polar InGaN quantum dots. The studied InGaN quantum dots are found to have linearly polarized emission with a common polarization direction defined by the [0001] crystal axis. Around half of ∼40 studied dots have a polarization degree of 1. For those lines with a polarization degree less than 1, we can resolve fine structure splittings between −800 μeV and +800 μeV, with no clear correlation between fine structure splitting and emission energy.

  9. M-CARS and EFISHG study of the influence of a static electric field on a non-polar molecule

    Science.gov (United States)

    Capitaine, E.; Louot, C.; Ould-Moussa, N.; Lefort, C.; Kaneyasu, J. F.; Kano, H.; Pagnoux, D.; Couderc, V.; Leproux, P.

    2016-03-01

    The influence of a static electric field on a non-polar molecule has been studied by means of multiplex coherent anti-Stokes Raman scattering (M-CARS). A parallel measurement of electric field induced second harmonic generation (EFISHG) has also been led. Both techniques suggest a reorientation of the molecule due to the presence of an electric field. This phenomenon can be used to increase the chemical selectivity and the signal to non-resonant background ratio, namely, the sensitivity of the M-CARS spectroscopy.

  10. The flotation of Roşia Poieni copper ore in column machine, with non-polar oils addition

    Directory of Open Access Journals (Sweden)

    Ciocani V.

    2005-11-01

    Full Text Available The most important natural resource of copper in Romania is the ore deposit of Roşia Poieni. At present, the utilization of Roşia Poieni poorphyry copper ore is possible by extraction in quarry of the mass ore and mineral processing into a technological flux with modest results for the value of metal recovery in concentrate 70-72 % and an average contents of 16,5 % Cu. Our researches were directed to studies regarding test and utilisation of special procedure of flotation – addition of the non-polar oil – applied to advanced grinding ore with column type machines.

  11. Cubical local partial orders on cubically subdivided spaces - existence and construction

    DEFF Research Database (Denmark)

    Fajstrup, Lisbeth

    The geometric models of Higher Dimensional Automata and Dijkstra's PV-model are cubically subdivided topological spaces with a local partial order. If a cubicalization of a topological space is free of immersed cubic Möbius bands, then there are consistent choices of direction in all cubes, such ...... that the underlying geometry of an HDA may be quite complicated....

  12. Cubical local partial orders on cubically subdivided spaces - Existence and construction

    DEFF Research Database (Denmark)

    Fajstrup, Lisbeth

    2006-01-01

    The geometric models of higher dimensional automata (HDA) and Dijkstra's PV-model are cubically subdivided topological spaces with a local partial order. If a cubicalization of a topological space is free of immersed cubic Möbius bands, then there are consistent choices of direction in all cubes...... that the underlying geometry of an HDA may be quite complicated....

  13. Valence and conduction band offsets of β-Ga2O3/AlN heterojunction

    Science.gov (United States)

    Sun, Haiding; Torres Castanedo, C. G.; Liu, Kaikai; Li, Kuang-Hui; Guo, Wenzhe; Lin, Ronghui; Liu, Xinwei; Li, Jingtao; Li, Xiaohang

    2017-10-01

    Both β-Ga2O3 and wurtzite AlN have wide bandgaps of 4.5-4.9 and 6.1 eV, respectively. We calculated the in-plane lattice mismatch between the (-201) plane of β-Ga2O3 and the (0002) plane of AlN, which was found to be 2.4%. This is the smallest mismatch between β-Ga2O3 and binary III-nitrides which is beneficial for the formation of a high quality β-Ga2O3/AlN heterojunction. However, the valence and conduction band offsets (VBO and CBO) at the β-Ga2O3/AlN heterojunction have not yet been identified. In this study, a very thin (less than 2 nm) β-Ga2O3 layer was deposited on an AlN/sapphire template to form the heterojunction by pulsed laser deposition. High-resolution X-ray photoelectron spectroscopy revealed the core-level (CL) binding energies of Ga 3d and Al 2p with respect to the valence band maximum in individual β-Ga2O3 and AlN layers, respectively. The separation between Ga 3d and Al 2p CLs at the β-Ga2O3/AlN interface was also measured. Eventually, the VBO was found to be -0.55 ± 0.05 eV. Consequently, a staggered-gap (type II) heterojunction with a CBO of -1.75 ± 0.05 eV was determined. The identification of the band alignment of the β-Ga2O3/AlN heterojunction could facilitate the design of optical and electronic devices based on these and related alloys.

  14. Valence and conduction band offsets of β-Ga2O3/AlN heterojunction

    KAUST Repository

    Sun, Haiding

    2017-10-16

    Both β-Ga2O3 and wurtzite AlN have wide bandgaps of 4.5–4.9 and 6.1 eV, respectively. We calculated the in-plane lattice mismatch between the (−201) plane of β-Ga2O3 and the (0002) plane of AlN, which was found to be 2.4%. This is the smallest mismatch between β-Ga2O3 and binary III-nitrides which is beneficial for the formation of a high quality β-Ga2O3/AlN heterojunction. However, the valence and conduction band offsets (VBO and CBO) at the β-Ga2O3/AlN heterojunction have not yet been identified. In this study, a very thin (less than 2 nm) β-Ga2O3 layer was deposited on an AlN/sapphire template to form the heterojunction by pulsed laser deposition. High-resolution X-ray photoelectron spectroscopy revealed the core-level (CL) binding energies of Ga 3d and Al 2p with respect to the valence band maximum in individual β-Ga2O3 and AlN layers, respectively. The separation between Ga 3d and Al 2p CLs at the β-Ga2O3/AlN interface was also measured. Eventually, the VBO was found to be −0.55 ± 0.05 eV. Consequently, a staggered-gap (type II) heterojunction with a CBO of −1.75 ± 0.05 eV was determined. The identification of the band alignment of the β-Ga2O3/AlN heterojunction could facilitate the design of optical and electronic devices based on these and related alloys.

  15. On the interplay of point defects and Cd in non-polar ZnCdO films

    International Nuclear Information System (INIS)

    Zubiaga, A.; Reurings, F.; Tuomisto, F.; Plazaola, F.; García, J. A.; Kuznetsov, A. Yu.; Egger, W.; Zúñiga-Pérez, J.; Muñoz-Sanjosé, V.

    2013-01-01

    Non-polar ZnCdO films, grown over m- and r-sapphire with a Cd concentration ranging between 0.8% and 5%, have been studied by means of slow positron annihilation spectroscopy (PAS) combined with chemical depth profiling by secondary ion mass spectroscopy and Rutherford back-scattering. Vacancy clusters and Zn vacancies with concentrations up to 10 17 cm −3 and 10 18 cm −3 , respectively, have been measured inside the films. Secondary ion mass spectroscopy results show that most Cd stays inside the ZnCdO film but the diffused atoms can penetrate up to 1.3 μm inside the ZnO buffer. PAS results give an insight to the structure of the meta-stable ZnCdO above the thermodynamical solubility limit of 2%. A correlation between the concentration of vacancy clusters and Cd has been measured. The concentration of Zn vacancies is one order of magnitude larger than in as-grown non-polar ZnO films and the vacancy cluster are, at least partly, created by the aggregation of smaller Zn vacancy related defects. The Zn vacancy related defects and the vacancy clusters accumulate around the Cd atoms as a way to release the strain induced by the substitutional Cd Zn in the ZnO crystal.

  16. On the interplay of point defects and Cd in non-polar ZnCdO films

    Energy Technology Data Exchange (ETDEWEB)

    Zubiaga, A.; Reurings, F.; Tuomisto, F. [Department of Applied Physics, Aalto University, P.O. Box 11100, 00076 Aalto, Espoo (Finland); Plazaola, F. [Elektrizitatea eta Elektronika/Fisika Aplikatua II Sailak, Euskal Herriko Unibertsitatea, Posta Kutxatila 644, 48080 Bilbao (Spain); Garcia, J. A. [Fisika Aplikatua II Saila, Euskal Herriko Unibertsitatea, Posta Kutxatila 644, 48080 Bilbao (Spain); Kuznetsov, A. Yu. [Department of Physics, University of Oslo, P.O. Box 1048 Blindern, NO-0316 Oslo (Norway); Egger, W. [Inst. fuer Angewandte Physik und Messtechnik, Univ. der Bundeswehr Muenchen, 87755 Neubiberg (Germany); Zuniga-Perez, J. [CRHEA CNRS, F-06560 Valbonne (France); Munoz-Sanjose, V. [Dept. de Fisica Aplicada i Electromagnetisme, c/ Doctor Moliner 50, E-46100 Burjassot (Valencia) (Spain)

    2013-01-14

    Non-polar ZnCdO films, grown over m- and r-sapphire with a Cd concentration ranging between 0.8% and 5%, have been studied by means of slow positron annihilation spectroscopy (PAS) combined with chemical depth profiling by secondary ion mass spectroscopy and Rutherford back-scattering. Vacancy clusters and Zn vacancies with concentrations up to 10{sup 17} cm{sup -3} and 10{sup 18} cm{sup -3}, respectively, have been measured inside the films. Secondary ion mass spectroscopy results show that most Cd stays inside the ZnCdO film but the diffused atoms can penetrate up to 1.3 {mu}m inside the ZnO buffer. PAS results give an insight to the structure of the meta-stable ZnCdO above the thermodynamical solubility limit of 2%. A correlation between the concentration of vacancy clusters and Cd has been measured. The concentration of Zn vacancies is one order of magnitude larger than in as-grown non-polar ZnO films and the vacancy cluster are, at least partly, created by the aggregation of smaller Zn vacancy related defects. The Zn vacancy related defects and the vacancy clusters accumulate around the Cd atoms as a way to release the strain induced by the substitutional Cd{sub Zn} in the ZnO crystal.

  17. On the interplay of point defects and Cd in non-polar ZnCdO films

    Science.gov (United States)

    Zubiaga, A.; Reurings, F.; Tuomisto, F.; Plazaola, F.; García, J. A.; Kuznetsov, A. Yu.; Egger, W.; Zúñiga-Pérez, J.; Muñoz-Sanjosé, V.

    2013-01-01

    Non-polar ZnCdO films, grown over m- and r-sapphire with a Cd concentration ranging between 0.8% and 5%, have been studied by means of slow positron annihilation spectroscopy (PAS) combined with chemical depth profiling by secondary ion mass spectroscopy and Rutherford back-scattering. Vacancy clusters and Zn vacancies with concentrations up to 1017 cm-3 and 1018 cm-3, respectively, have been measured inside the films. Secondary ion mass spectroscopy results show that most Cd stays inside the ZnCdO film but the diffused atoms can penetrate up to 1.3 μm inside the ZnO buffer. PAS results give an insight to the structure of the meta-stable ZnCdO above the thermodynamical solubility limit of 2%. A correlation between the concentration of vacancy clusters and Cd has been measured. The concentration of Zn vacancies is one order of magnitude larger than in as-grown non-polar ZnO films and the vacancy cluster are, at least partly, created by the aggregation of smaller Zn vacancy related defects. The Zn vacancy related defects and the vacancy clusters accumulate around the Cd atoms as a way to release the strain induced by the substitutional CdZn in the ZnO crystal.

  18. Tip-induced domain growth on the non-polar cuts of lithium niobate single-crystals

    Science.gov (United States)

    Alikin, D. O.; Ievlev, A. V.; Turygin, A. P.; Lobov, A. I.; Kalinin, S. V.; Shur, V. Ya.

    2015-05-01

    Currently, ferroelectric materials with designed domain structures are considered as a perspective material for new generation of photonic, data storage, and data processing devices. Application of external electric field is the most convenient way of the domain structure formation. Lots of papers are devoted to the investigation of domain kinetics on polar surface of crystals while the forward growth remains one of the most mysterious stages due to lack of experimental methods allowing to study it. Here, we performed tip-induced polarization reversal on X- and Y-non-polar cuts in single-crystal of congruent lithium niobate which allows us to study the forward growth with high spatial resolution. The revealed difference in the shape and length of domains induced on X- and Y-cuts is beyond previously developed theoretical approaches used for the theoretical consideration of the domains growth at non-polar ferroelectric surfaces. To explain experimental results, we used kinetic approach with anisotropy of screening efficiency along different crystallographic directions.

  19. An AlN cantilever for a wake-up switch triggered by air pressure change

    International Nuclear Information System (INIS)

    Kaiho, Y; Itoh, T; Maeda, R; Takahashi, H; Matsumoto, K; Shimoyama, I; Tomimatsu, Y; Kobayashi, T

    2013-01-01

    This research reports an AlN cantilever with an air chamber for a wake-up switch triggered by air pressure change. The proposed sensor is designed to fulfil both high sensitivity and low power consumption. By combining an air chamber to the one side of the AlN cantilever surface, the barometric pressure change generates a piezoelectric voltage. Thus, a wake-up switch triggered by air pressure change can be achieved using an AlN cantilever. The size of the fabricated AlN cantilever was 2000 μm × 1000 μm × 2 μm. The sensitivity to static differential pressure was 11.5 mV/Pa at the range of −20 Pa to 20 Pa. We evaluated the response of the sensor, which was composed of the AlN cantilever and the chamber of 60 ml in volume, when air pressure change was applied. The output voltage increased with increasing the applied air pressure change. It was observed that the maximum output voltage of 50 mV was generated when the air pressure change was 13 Pa

  20. Understanding AlN Obtaining Through Computational Thermodynamics Combined with Experimental Investigation

    Science.gov (United States)

    Florea, R. M.

    2017-06-01

    Basic material concept, technology and some results of studies on aluminum matrix composite with dispersive aluminum nitride reinforcement was shown. Studied composites were manufactured by „in situ” technique. Aluminum nitride (AlN) has attracted large interest recently, because of its high thermal conductivity, good dielectric properties, high flexural strength, thermal expansion coefficient matches that of Si and its non-toxic nature, as a suitable material for hybrid integrated circuit substrates. AlMg alloys are the best matrix for AlN obtaining. Al2O3-AlMg, AlN-Al2O3, and AlN-AlMg binary diagrams were thermodynamically modelled. The obtained Gibbs free energies of components, solution parameters and stoichiometric phases were used to build a thermodynamic database of AlN- Al2O3-AlMg system. Obtaining of AlN with Liquid-phase of AlMg as matrix has been studied and compared with the thermodynamic results. The secondary phase microstructure has a significant effect on the final thermal conductivity of the obtained AlN. Thermodynamic modelling of AlN-Al2O3-AlMg system provided an important basis for understanding the obtaining behavior and interpreting the experimental results.

  1. Lattice damage induced by Tb-implanted AlN crystalline films

    International Nuclear Information System (INIS)

    Lu Fei; Hu Hui; Rizzi, A.

    2002-01-01

    AlN films with thickness from 100 to 1000 nm were grown on SiC substrate by MBE. AlN crystalline films were doped by implantation with 160 keV Tb ions to fluences of 5x10 14 , 1.5x10 15 , 3x10 15 and 6x10 15 ions/cm 2 , respectively. The damage profiles in AlN films induced by Tb implantation were investigated using RBS/channeling technique. A procedure developed by Feldman and Rodgers was used to extract damage profile by considering the dechanneling mechanism of multiple. The comparison of the extracted profile with TRIM prediction shows a significant difference in the shape and in the position of damage profile. The damage profile in AlN film is similar as Tb distribution. The RBS/channeling of Tb-implanted AlN film before and after 950 deg. C annealing treatments show a good consistency, which indicate that high temperature annealing cannot result in a significant change in both crystal damage and in Tb distribution

  2. Electro-acoustic sensors based on AlN thin film: possibilities and limitations

    Science.gov (United States)

    Wingqvist, Gunilla

    2011-06-01

    The non-ferroelectric polar wurtzite aluminium nitride (AlN) material has been shown to have potential for various sensor applications both utilizing the piezoelectric effect directly for pressure sensors or indirectly for acoustic sensing of various physical, chemical and biochemical sensor applications. Especially, sputter deposited AlN thin films have played a central role for successful development of the thin film electro-acoustic technology. The development has been primarily driven by one device - the thin film bulk acoustic resonator (FBAR or TFBAR), with its primary use for high frequency filter applications for the telecom industry. AlN has been the dominating choice for commercial application due to compatibility with the integrated circuit technology, low acoustic and dielectric losses, high acoustic velocity in combination with comparably high (but still for some applications limited) electromechanical coupling. Recently, increased piezoelectric properties (and also electromechanical coupling) in the AlN through the alloying with scandium nitride (ScN) have been identified both experimentally and theoretically. Inhere, the utilization of piezoelectricity in electro-acoustic sensing will be discussed together with expectation on acoustic FBAR sensor performance with variation in piezoelectric material properties in the parameter space around AlN due to alloying, in view of the ScxAl1-xN (0

  3. Cubical sets as a classifying topos

    DEFF Research Database (Denmark)

    Spitters, Bas

    Coquand’s cubical set model for homotopy type theory provides the basis for a computational interpretation of the univalence axiom and some higher inductive types, as implemented in the cubical proof assistant. We show that the underlying cube category is the opposite of the Lawvere theory of De...... Morgan algebras. The topos of cubical sets itself classifies the theory of ‘free De Morgan algebras’. This provides us with a topos with an internal ‘interval’. Using this interval we construct a model of type theory following van den Berg and Garner. We are currently investigating the precise relation...

  4. Generalized Vaidya spacetime for cubic gravity

    Science.gov (United States)

    Ruan, Shan-Ming

    2016-03-01

    We present a kind of generalized Vaidya solution of a new cubic gravity in five dimensions whose field equations in spherically symmetric spacetime are always second order like the Lovelock gravity. We also study the thermodynamics of its spherically symmetric apparent horizon and get its entropy expression and generalized Misner-Sharp energy. Finally, we present the first law and second law hold in this gravity. Although all the results are analogous to those in Lovelock gravity, we in fact introduce the contribution of a new cubic term in five dimensions where the cubic Lovelock term is just zero.

  5. DFT study on the adsorption behavior and electronic response of AlN nanotube and nanocage toward toxic halothane gas

    Science.gov (United States)

    Mohammadi, R.; Hosseinian, A.; Khosroshahi, E. Saedi; Edjlali, L.; Vessally, E.

    2018-04-01

    We have investigated the adsorption of a halothane molecule on the AlN nanotube, and nanocage using density functional theory calculations. We predicted that the halothane molecule tends to be physically adsorbed on the surface of AlN nanotube with adsorption energy (Ead) of -4.2 kcal/mol. The electronic properties of AlN nanotube are not affected by the halothane, and it is not a sensor. But the AlN nanocage is more reactive than the AlN nanotube because of its higher curvature. The halothane tends to be adsorbed on a hexagonal ring, an Alsbnd N bond, and a tetragonal ring of the AlN nanocage. The adsorption ability order is as follows: tetragonal ring (Ead = -14.7 kcal/mol) > Alsbnd N bond (Ead = -12.3 kcal/mol) > hexagonal ring (Ead = -10.1 kcal/mol). When a halothane molecule is adsorbed on the AlN nanocage, its electrical conductivity is increased, demonstrating that it can yield an electronic signal at the presence of this molecule, and can be employed in chemical sensors. The AlN nanocage benefits from a short recovery time of about 58 ms at room temperature.

  6. Polarity inversion of AlN film grown on nitrided a-plane sapphire substrate with pulsed DC reactive sputtering

    Directory of Open Access Journals (Sweden)

    Marsetio Noorprajuda

    2018-04-01

    Full Text Available The effect of oxygen partial pressure (PO2 on polarity and crystalline quality of AlN films grown on nitrided a-plane sapphire substrates by pulsed direct current (DC reactive sputtering was investigated as a fundamental study. The polarity inversion of AlN from nitrogen (−c-polarity to aluminum (+c-polarity occurred during growth at a high PO2 of 9.4×103 Pa owing to Al-O octahedral formation at the interface of nitrided layer and AlN sputtered film which reset the polarity of AlN. The top part of the 1300 nm-thick AlN film sputtered at the high PO2 was polycrystallized. The crystalline quality was improved owing to the high kinetic energy of Al sputtered atom in the sputtering phenomena. Thinner AlN films were also fabricated at the high PO2 to eliminate the polycrystallization. For the 200 nm-thick AlN film sputtered at the high PO2, the full width at half-maximum values of the AlN (0002 and (10−12 X-ray diffraction rocking curves were 47 and 637 arcsec, respectively.

  7. A novel surface micromachining process to fabricate AlN unimorph suspensions and its application for RF resonators

    NARCIS (Netherlands)

    Saravanan, S.; Saravanan, S.; Berenschot, Johan W.; Krijnen, Gijsbertus J.M.; Elwenspoek, Michael Curt

    2006-01-01

    A novel surface micromachining process is reported for aluminum nitride (AlN) thin films to fabricate piezoelectric unimorph suspension devices for micro actuator applications. Wet anisotropic etching of AlN thin film is used with a Cr metal mask layer in the microfabrication process. Tetra methyl

  8. Brazing of AlN to SiC by a Pr silicide: Physicochemical aspects

    Energy Technology Data Exchange (ETDEWEB)

    Koltsov, A. [SIMAP - UMR CNRS 5266, INP Grenoble-UJF, Domaine Universitaire, BP 75, 1130 rue de la Piscine, 38402 Saint Martin d' Heres, Cedex (France)], E-mail: alexey.koltsov@arcelor.com; Hodaj, F.; Eustathopoulos, N. [SIMAP - UMR CNRS 5266, INP Grenoble-UJF, Domaine Universitaire, BP 75, 1130 rue de la Piscine, 38402 Saint Martin d' Heres, Cedex (France)

    2008-11-15

    In view of their very different thermomechanical properties, joining of metals to ceramics by brazing is usually performed by means of one or more interlayers. In a recent investigation AlN was chosen as interlayer material for brazing SiC to a superalloy. The aim of the present study is to determine an alloy with a high melting point (close to 1200 deg. C) enabling brazing of AlN to SiC. Two types of experiments are performed with a Si-17 at.% Pr eutectic alloy (T{sub m} = 1212 deg. C): sessile drop experiments to determine wetting and brazing of AlN and SiC plates to determine gap filling. Experiments are carried out in high vacuum to promote deoxidation. Interfacial reactivity, joint microstructure and type of failure occurring during cooling are examined by optical and scanning electron microscopy.

  9. Brazing of AlN to SiC by a Pr silicide: Physicochemical aspects

    International Nuclear Information System (INIS)

    Koltsov, A.; Hodaj, F.; Eustathopoulos, N.

    2008-01-01

    In view of their very different thermomechanical properties, joining of metals to ceramics by brazing is usually performed by means of one or more interlayers. In a recent investigation AlN was chosen as interlayer material for brazing SiC to a superalloy. The aim of the present study is to determine an alloy with a high melting point (close to 1200 deg. C) enabling brazing of AlN to SiC. Two types of experiments are performed with a Si-17 at.% Pr eutectic alloy (T m = 1212 deg. C): sessile drop experiments to determine wetting and brazing of AlN and SiC plates to determine gap filling. Experiments are carried out in high vacuum to promote deoxidation. Interfacial reactivity, joint microstructure and type of failure occurring during cooling are examined by optical and scanning electron microscopy

  10. Ab initio study of M2AlN (M = Ti,V,Cr)

    International Nuclear Information System (INIS)

    Sun, Zhimei; Music, Denis; Ahuja, Rajeev; Schneider, Jochen M

    2005-01-01

    We have studied M 2 AlN phases, where M = Ti, V, and Cr, by means of ab initio total energy calculations. The bulk modulus of M 2 AlN increases as Ti is replaced with V and Cr by 19.0% and 26.5%, respectively, which can be understood on the basis of the increased number of valence electrons filling the p-d hybridized bonding states. The bulk modulus of M 2 AlN is generally higher than that of the corresponding M 2 AlC phase, which may be explained by an extra electron in the former phases contributing to stronger chemical bonding. This work is important for fundamental understanding of elastic properties of these ternary nitrides and may inspire future experimental research. (letter to the editor)

  11. Oxidation behaviour of a Ti2AlN MAX-phase coating

    International Nuclear Information System (INIS)

    Wang Qimin; Kim, Kwangho; Garkas, W; Renteria, A Flores; Leyens, C; Sun Chao

    2011-01-01

    In this paper, we reported the oxidation behaviour of Ti 2 AlN coatings on a -TiAl substrate. The coatings composed mainly of Ti 2 AlN MAX phase were obtained by magnetron sputtering and subsequent vacuum annealing. Isothermal oxidation tests at 700-900 deg. C were performed in air. The results indicated that the oxidation resistance of the -TiAl alloy can be improved by depositing a Ti 2 AlN layer on the alloy surface, especially at high temperatures. An Al-rich oxide scale formed on the coating surfaces during oxidation. This scale acts as diffusion barrier blocking the ingress of oxidation, and effectively protects the coated alloys from further oxidation attack.

  12. Oxidation behaviour of a Ti{sub 2}AlN MAX-phase coating

    Energy Technology Data Exchange (ETDEWEB)

    Wang Qimin; Kim, Kwangho [National Core Research Center for Hybrid Materials Solution, Pusan National University, Busan 609-735 (Korea, Republic of); Garkas, W; Renteria, A Flores [Chair of Physical Metallurgy and Materials Technology, Technical University of Brandenburg at Cottbus, 03046 Cottbus (Germany); Leyens, C [Institute of Materials Science, Technical University of Dresden, Helmholtzstrasse 7, 01069 Dresden (Germany); Sun Chao, E-mail: qmwang@pusan.ac.kr, E-mail: kwhokim@pusan.ac.kr [Division of Surface Engineering of Materials, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China)

    2011-10-29

    In this paper, we reported the oxidation behaviour of Ti{sub 2}AlN coatings on a -TiAl substrate. The coatings composed mainly of Ti{sub 2}AlN MAX phase were obtained by magnetron sputtering and subsequent vacuum annealing. Isothermal oxidation tests at 700-900 deg. C were performed in air. The results indicated that the oxidation resistance of the -TiAl alloy can be improved by depositing a Ti{sub 2}AlN layer on the alloy surface, especially at high temperatures. An Al-rich oxide scale formed on the coating surfaces during oxidation. This scale acts as diffusion barrier blocking the ingress of oxidation, and effectively protects the coated alloys from further oxidation attack.

  13. Quantitative Evaluation of Strain in Epitaxial 2H AlN Layers

    International Nuclear Information System (INIS)

    Nader, N.; Pezoldt, J.

    2011-01-01

    To improve the quality of AlN layer deposit on SiC/Si, different Ge amounts (0.25, 0.5, 1, 2ML) were deposited before the carbonization process at the silicon substrate in order to reduce the lattice parameters mismatch between Si and SiC grown layers. The residual stress of the hexagonal AlN layers derives from the phonon frequency shifts of the E1(TO) phonon mode. The crystalline quality of the AlN layer is correlated to and investigated by the full width of the half maximum (FWHM) and the intensity of E1(TO) mode of the 2H-AlN. Best crystalline quality and lower stress value are found in the case where 1ML of Ge amount is predeposited. The E1(TO) mode phonon frequency shifts-down by 3 cm-1/GPa with respect to an unstrained layer. (author)

  14. Structure and chemistry of the Si(111)/AlN interface

    Science.gov (United States)

    Radtke, G.; Couillard, M.; Botton, G. A.; Zhu, D.; Humphreys, C. J.

    2012-01-01

    We investigate the atomic structure and the chemistry of the Si(111)/AlN interface for an AlN film grown at low-temperature (735 °C) by metalorganic vapor phase epitaxy. A heterogeneous interface is formed from the alternation of crystallographically abrupt and partly amorphous regions. The polarity of the AlN film, along with the projected atomic structure of the crystalline interface, is retrieved using high-angle annular dark field imaging, and a model, based on these experimental observations, is proposed for the bonding at the interface. Electron energy-loss spectrum-imaging, however, also reveals a chemical intermixing, placing our growth conditions at the onset of SiNx interlayer formation.

  15. Preliminary comparison of three processes of AlN oxidation: dry, wet and mixed ones

    Directory of Open Access Journals (Sweden)

    Korbutowicz R.

    2016-03-01

    Full Text Available Three methods of AlN layers oxidation: dry, wet and mixed (wet with oxygen were compared. Some physical parameters of oxidized thin films of aluminum nitride (AlN layers grown on silicon Si(1 1 1 were investigated by means Energy-Dispersive X-ray Spectroscopy (EDS and Spectroscopic Ellipsometry (SE. Three series of the thermal oxidations processes were carried out at 1012 °C in pure nitrogen as carrying gas and various gas ambients: (a dry oxidation with oxygen, (b wet oxidation with water steam and (c mixed atmosphere with various process times. All the research methods have shown that along with the rising of the oxidation time, AlN layer across the aluminum oxide nitride transforms to aluminum oxide. The mixed oxidation was a faster method than the dry or wet ones.

  16. Cubic Pencils and Painlev\\'e Hamiltonians

    OpenAIRE

    Kajiwara, Kenji; Masuda, Tetsu; Noumi, Masatoshi; Ohta, Yasuhiro; Yamada, Yasuhiko

    2004-01-01

    We present a simple heuristic method to derive the Painlev\\'e differential equations from the corresponding geometry of rational surafces. We also give a direct relationship between the cubic pencils and Seiberg-Witten curves.

  17. Investigation of blue luminescence in Mg doped AlN films

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Xiliang; Xiong, Juan, E-mail: xiongjuana@163.com; Zhang, Weihai; Liu, Lei; Gu, Haoshuang, E-mail: guhsh@hubu.edu.cn

    2015-02-05

    Highlights: • AlN films doped with 0.8–4.4 at.% Mg were deposited by magnetron sputtering. • Structural and photoluminescence properties of Mg-doped AlN films were synthesized in detailed. • A broad blue band centered at 420 nm and 440 nm was observed in Mg-doped AlN films. • An enhancement of A1 (TO) mod and a slightly blue-shift of E2 (high) mode were observed. - Abstract: The Al{sub 1−x}Mg{sub x}N thin films were deposited on (1 0 0) silicon substrates by magnetron sputtering. The structural and photoluminescence properties of the films with varying Mg concentrations were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), Raman spectra and photoluminescence (PL), respectively. The results clearly showed that the Mg atoms successfully incorporated into AlN, while the crystal structure of the films was maintained. The Raman spectra of Al{sub 1−x}Mg{sub x}N films reveals the enhancement of A{sub 1} (TO) mode, a slightly blue-shift and an augment in FWHM for E{sub 2} (high) phonon mode with increasing Mg content, which can be associated with the deterioration of (0 0 2) orientation and the appearance of (1 0 0) orientation. A broad blue band centered at 420 nm and 440 nm was observed in Mg-doped AlN films. It was suggested that the transitions from the shallow donor level not only to the ground state but also to the excited states of the deep level was responsible for the broad blue emission band. This work indicates the AlN film for the application in lighting emission devices.

  18. A Note on Cubic Convolution Interpolation

    OpenAIRE

    Meijering, E.; Unser, M.

    2003-01-01

    We establish a link between classical osculatory interpolation and modern convolution-based interpolation and use it to show that two well-known cubic convolution schemes are formally equivalent to two osculatory interpolation schemes proposed in the actuarial literature about a century ago. We also discuss computational differences and give examples of other cubic interpolation schemes not previously studied in signal and image processing.

  19. Cubical version of combinatorial differential forms

    DEFF Research Database (Denmark)

    Kock, Anders

    2010-01-01

    The theory of combinatorial differential forms is usually presented in simplicial terms. We present here a cubical version; it depends on the possibility of forming affine combinations of mutual neighbour points in a manifold, in the context of synthetic differential geometry.......The theory of combinatorial differential forms is usually presented in simplicial terms. We present here a cubical version; it depends on the possibility of forming affine combinations of mutual neighbour points in a manifold, in the context of synthetic differential geometry....

  20. Fabrication of AlN thin films on different substrates at ambient temperature

    CERN Document Server

    Cai, W X; Wu, P H; Yang, S Z; Ji, Z M

    2002-01-01

    Aluminium nitride (AlN) is very useful as a barrier in superconductor-insulator-superconductor (SIS) device or as an insulating layer in many other applications. At ambient temperature, we deposit AlN thin films onto different substrates (such as MgO, LaAlO sub 3 and Si) by using radio-frequency magnetron sputtering and pure Al target. X-ray diffraction (XRD) and PHI-scan patterns show that the films grown on MgO substrates are excellent epitaxial films with (101) orientation of a hexagonal lattice. A possible structure of the interface between the film and the substrate is suggested and discussed.

  1. Single-crystalline AlN growth on sapphire using physical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Cardenas-Valencia, Andres M., E-mail: andres.cardenas@sri.co [SRI International (United States); Onishi, Shinzo; Rossie, Benjamin [SRI International (United States)

    2011-02-07

    A novel technique for growing single crystalline aluminum nitride (AlN) films is presented. The novelty of the technique, specifically, comes from the use of an innovative physical vapor deposition magnetron sputtering tool, which embeds magnets into the target material. A relatively high deposition rates is achieved ({approx}0.2 {mu}m/min), at temperatures between 860 and 940 {sup o}C. The AlN, grown onto sapphire, is single-crystalline as evidenced by observation using transmission electron microscopy. Tool configuration and growth conditions are discussed, as well as a first set of other analytical results, namely, x-ray diffraction and ultraviolet-visible transmission spectrophotometry.

  2. Properties of planar structures based on Policluster films of diamond and AlN

    Science.gov (United States)

    Belyanin, A. F.; Luchnikov, A. P.; Nalimov, S. A.; Bagdasarian, A. S.

    2018-01-01

    AlN films doped with zinc were grown on Si substrates by RF magnetron reactive sputtering of a compound target. Policluster films of diamond doped with boron were formed on layered Si/AlN substrates from the gas phase hydrogen and methane, activated arc discharge. By electron microscopy, X-ray diffraction and Raman spectroscopy the composition and structure of synthetic policluster films of diamond and AlN films were studied. Photovoltaic devices based on the AlN/PFD layered structure are presented.

  3. High molecular weight non-polar hydrocarbons as pure model substances and in motor oil samples can be ionized without fragmentation by atmospheric pressure chemical ionization mass spectrometry.

    Science.gov (United States)

    Hourani, Nadim; Kuhnert, Nikolai

    2012-10-15

    High molecular weight non-polar hydrocarbons are still difficult to detect by mass spectrometry. Although several studies have targeted this problem, lack of good self-ionization has limited the ability of mass spectrometry to examine these hydrocarbons. Failure to control ion generation in the atmospheric pressure chemical ionization (APCI) source hampers the detection of intact stable gas-phase ions of non-polar hydrocarbon in mass spectrometry. Seventeen non-volatile non-polar hydrocarbons, reported to be difficult to ionize, were examined by an optimized APCI methodology using nitrogen as the reagent gas. All these analytes were successfully ionized as abundant and intact stable [M-H](+) ions without the use of any derivatization or adduct chemistry and without significant fragmentation. Application of the method to real-life hydrocarbon mixtures like light shredder waste and car motor oil was demonstrated. Despite numerous reports to the contrary, it is possible to ionize high molecular weight non-polar hydrocarbons by APCI, omitting the use of additives. This finding represents a significant step towards extending the applicability of mass spectrometry to non-polar hydrocarbon analyses in crude oil, petrochemical products, waste or food. Copyright © 2012 John Wiley & Sons, Ltd.

  4. Cubic AlGaN/GaN structures for device application

    Energy Technology Data Exchange (ETDEWEB)

    Schoermann, Joerg

    2007-05-15

    The aim of this work was the growth and the characterization of cubic GaN, cubic AlGaN/GaN heterostructures and cubic AlN/GaN superlattice structures. Reduction of the surface and interface roughness was the key issue to show the potential for the use of cubic nitrides in futur devices. All structures were grown by plasma assisted molecular beam epitaxy on free standing 3C-SiC (001) substrates. In situ reflection high energy electron diffraction was first investigated to determine the Ga coverage of c-GaN during growth. Using the intensity of the electron beam as a probe, optimum growth conditions were found when a 1 monolayer coverage is formed at the surface. GaN samples grown under these conditions reveal excellent structural properties. On top of the c-GaN buffer c-AlGaN/GaN single and multiple quantum wells were deposited. The well widths ranged from 2.5 to 7.5 nm. During growth of Al{sub 0.15}Ga{sub 0.85}N/GaN quantum wells clear reflection high energy electron diffraction oscillations were observed indicating a two dimensional growth mode. We observed strong room-temperature, ultraviolet photoluminescence at about 3.3 eV with a minimum linewidth of 90 meV. The peak energy of the emission versus well width is reproduced by a square-well Poisson- Schroedinger model calculation. We found that piezoelectric effects are absent in c-III nitrides with a (001) growth direction. Intersubband transition in the wavelength range from 1.6 {mu}m to 2.1 {mu}m was systematically investigated in AlN/GaN superlattices (SL), grown on 100 nm thick c-GaN buffer layers. The SLs consisted of 20 periods of GaN wells with a thickness between 1.5 nm and 2.1 nm and AlN barriers with a thickness of 1.35 nm. The first intersubband transitions were observed in metastable cubic III nitride structures in the range between 1.6 {mu}m and 2.1 {mu}m. (orig.)

  5. Extraction estimation and gas chromatographic mass spectrometric analysis of the non polar fraction of the pistia stratiotes

    International Nuclear Information System (INIS)

    Hussain, Z.

    2013-01-01

    The non-polar compounds of the Pistia stratiotes were extracted using n-hexane as solvent. The extraction yields were determined both for the cold and hot extraction procedure as 8.50 +- 0.05% and 12.00 +- 0.05%, respectively. The extract was analyzed and separated into its components using GC equipped with FID and GC mass in separate experiments. The most important compounds identified in n-hexane extract of leaves of P. stratiotes are long chain compound of the nitrogenous nature and oxygenated compounds of mixed functional groups. The antibacterial activity of this fraction was investigated against eight pathogenic bacteria using disc diffusion method. Larger zones of inhibition were observed for Bacillus subtilis, Pseudomonas aeruginosa and Agrobacterium tumefaciens as compared to Klebsiella pneumoniaee and Staphylococcus aureus where the activity was relatively less. No activity was observed against Escherichia coli, Salmonella typhi and Bacillus atrophaeus. (author)

  6. Basal-plane stacking faults in non-polar GaN studied by off-axis electron holography

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Lewis Z-Y; Rao, D V Sridhara; Kappers, M J; Humphreys, C J [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ (United Kingdom); Geiger, D, E-mail: ZL249@cam.ac.u [Triebenberg Laboratory, Institute for Structure Physics, Technische Universitaet Dresden, D-01062 Dresden (Germany)

    2010-02-01

    We have studied basal-plane stacking faults in a non-polar (11-20) GaN epilayer using high-resolution electron microscopy and off-axis electron holography. The microstructure of the basal-plane stacking faults (BSFs) has been determined to be I{sub 1} type from high-resolution TEM images. High-resolution holograms along the [11-20] zone axis were obtained by off-axis electron holography on a Cs-corrected TEM, providing {approx}2 A spatial resolution in the reconstructed amplitude and phase images. Phase fluctuations across the stacking faults were detected, suggesting the presence of a built-in electric field. The uncertainties in the experiments and their interpretation are discussed.

  7. Measuring polarization dependent dispersion of non-polarizing beam splitter cubes with spectrally resolved white light interferometry

    Science.gov (United States)

    Csonti, K.; Hanyecz, V.; Mészáros, G.; Kovács, A. P.

    2017-06-01

    In this work we have measured the group-delay dispersion of an empty Michelson interferometer for s- and p-polarized light beams applying two different non-polarizing beam splitter cubes. The interference pattern appearing at the output of the interferometer was resolved with two different spectrometers. It was found that the group-delay dispersion of the empty interferometer depended on the polarization directions in case of both beam splitter cubes. The results were checked by inserting a glass plate in the sample arm of the interferometer and similar difference was obtained for the two polarization directions. These results show that to reach high precision, linearly polarized white light beam should be used and the residual dispersion of the empty interferometer should be measured at both polarization directions.

  8. Effect of asymmetrical transfer coefficients of a non-polarizing beam splitter on the nonlinear error of the polarization interferometer

    Science.gov (United States)

    Zhao, Chen-Guang; Tan, Jiu-Bin; Liu, Tao

    2010-09-01

    The mechanism of a non-polarizing beam splitter (NPBS) with asymmetrical transfer coefficients causing the rotation of polarization direction is explained in principle, and the measurement nonlinear error caused by NPBS is analyzed based on Jones matrix theory. Theoretical calculations show that the nonlinear error changes periodically, and the error period and peak values increase with the deviation between transmissivities of p-polarization and s-polarization states. When the transmissivity of p-polarization is 53% and that of s-polarization is 48%, the maximum error reaches 2.7 nm. The imperfection of NPBS is one of the main error sources in simultaneous phase-shifting polarization interferometer, and its influence can not be neglected in the nanoscale ultra-precision measurement.

  9. X-ray diffraction study of A- plane non-polar InN epilayer grown by MOCVD

    Science.gov (United States)

    Moret, Matthieu; Briot, Olivier; Gil, Bernard

    2015-03-01

    Strong polarisation-induced electric fields in C-plane oriented nitrides semiconductor layers reduce the performance of devices. Eliminating the polarization fields can be achieved by growing nitrides along non polar direction. We have grown non polar A-plane oriented InN on R-plane (1‾102) nitridated sapphire substrate by MOCVD. We have studied the structural anisotropy observed in these layers by analyzing High Resolution XRay Diffraction rocking curve (RC) experiments as a function of the in-plane beam orientation. A-plane InN epilayer have a unique epitaxial relationship on R-Plane sapphire and show a strong structural anisotropy. Full width at half maximum (FWHM) of the InN(11‾20) XRD RC values are contained between 44 and 81 Arcmin. FWHM is smaller when the diffraction occurs along the [0001] and the largest FWHM values, of the (11‾20) RC, are obtained when the diffraction occurs along the [1‾100] in-plane direction. Atomic Force Microscopy imaging revealed morphologies with well organized crystallites. The grains are structured along a unique crystallographic orientation of InN, leading to larger domains in this direction. This structural anisotropy can be, in first approximation, attributed to the difference in the domain sizes observed. XRD reciprocal space mappings (RSM) were performed in asymmetrical configuration on (13‾40) and (2‾202) diffraction plane. RSM are measured with a beam orientation corresponding to a maximal and a minimal width of the (11‾20) Rocking curves, respectively. A simple theoretical model is exposed to interpret the RSM. We concluded that the dominant contribution to the anisotropy is due to the scattering coherence length anisotropy present in our samples.

  10. Material and device studies for the development of ultra-violet light emitting diodes (UV-LEDS) along polar, non-polar and semi-polar directions

    Science.gov (United States)

    Chandrasekaran, Ramya

    Over the past few years, significant effort was dedicated to the development of ultraviolet light emitting diodes (UV-LEDs) for a variety of applications. Such applications include chemical and biological detection, water purification and solid-state lighting. III-Nitride LEDs based on multiple quantum wells (MQWs) grown along the conventional [0001] (polar) direction suffer from the quantum confined Stark effect (QCSE), due to the existence of strong electric fields that arise from spontaneous and piezoelectric polarization. Thus, there is strong motivation to develop MQW-based III-nitride LED structures grown along non-polar and semi-polar directions. The goal of this dissertation is to develop UV-LEDs along the [0001] polar and [11 2¯ 0] non-polar directions by the method of Molecular Beam Epitaxy (MBE). The polar and non-polar LEDs were grown on the C-plane and R-plane sapphire substrates respectively. This work is a combination of materials science studies related to the nucleation, growth and n- and p-type doping of III-nitride films on these two substrates, as well as device studies related to fabrication and characterization of UV-LEDs. It was observed that the crystallographic orientation of the III-nitride films grown on R-plane sapphire depends strongly on the kinetic conditions of growth of the Aluminum Nitride (AIN) buffer. Specifically, growth of the AIN buffer under group III-rich conditions leads to nitride films having the (11 2¯ 0) non polar planes parallel to the sapphire surface, while growth of the buffer under nitrogen rich conditions leads to nitride films with the (11 2¯ 6) semi-polar planes parallel to the sapphire surface. The electron concentration and mobility for the films grown along the polar, non-polar and semi-polar directions were investigated. P-type doping of Gallium Nitride (GaN) films grown on the nonpolar (11 2¯ 0) plane do not suffer from polarity inversion and thus the material was doped p-type with a hole concentration

  11. Enhanced field emission from Si doped nanocrystalline AlN thin films

    International Nuclear Information System (INIS)

    Thapa, R.; Saha, B.; Chattopadhyay, K.K.

    2009-01-01

    Si doped and undoped nanocrystalline aluminum nitride thin films were deposited on various substrates by direct current sputtering technique. X-ray diffraction analysis confirmed the formation of phase pure hexagonal aluminum nitride with a single peak corresponding to (1 0 0) reflection of AlN with lattice constants, a = 0.3114 nm and c = 0.4986 nm. Energy dispersive analysis of X-rays confirmed the presence of Si in the doped AlN films. Atomic force microscopic studies showed that the average particle size of the film prepared at substrate temperature 200 deg. C was 9.5 nm, but when 5 at.% Si was incorporated the average particle size increased to ∼21 nm. Field emission study indicated that, with increasing Si doping concentration, the emission characteristics have been improved. The turn-on field (E to ) was 15.0 (±0.7) V/μm, 8.0 (±0.4) V/μm and 7.8 (±0.5) V/μm for undoped, 3 at.% and 5 at.% Si doped AlN films respectively and the maximum current density of 0.27 μA/cm 2 has been observed for 5 at.% Si doped nanocrystalline AlN film. It was also found that the dielectric properties were highly dependent on Si doping.

  12. Structure of AlN films deposited by magnetron sputtering method

    Directory of Open Access Journals (Sweden)

    Nowakowska-Langier K.

    2015-09-01

    Full Text Available AlN films on a Si substrate were synthesized by magnetron sputtering method. A dual magnetron system operating in AC mode was used in the experiment. Processes of synthesis were carried out in the atmosphere of a mixture of Ar/N2. Morphology and phase structure of the AlN films were investigated at different pressures. Structural characterizations were performed by means of SEM and X-ray diffraction methods. Our results show that the use of magnetron sputtering method in a dual magnetron sputtering system is an effective way to produce AlN layers which are characterized by a good adhesion to the silicon substrate. The morphology of the films is strongly dependent on the Ar/N2 gas mixture pressure. An increase of the mixture pressure is accompanied by a columnar growth of the layers. The films obtained at the pressure below 1 Pa are characterized by finer and compacter structure. The AlN films are characterized by a polycrystalline hexagonal (wurtzite structure in which the crystallographic orientation depends on the gas mixture pressure.

  13. Early and Late Retrieval of the ALN Removable Vena Cava Filter: Results from a Multicenter Study

    International Nuclear Information System (INIS)

    Pellerin, O.; Barral, F. G.; Lions, C.; Novelli, L.; Beregi, J. P.; Sapoval, M.

    2008-01-01

    Retrieval of removable inferior vena cava (IVC) filters in selected patients is widely practiced. The purpose of this multicenter study was to evaluate the feasibility and results of percutaneous removal of the ALN removable filter in a large patient cohort. Between November 2003 and June 2006, 123 consecutive patients were referred for percutaneous extraction of the ALN filter at three centers. The ALN filter is a removable filter that can be implanted through a femoral/jugular vein approach and extracted by the jugular vein approach. Filter removal was attempted after an implantation period of 93 ± 15 days (range, 6-722 days) through the right internal jugular vein approach using the dedicated extraction kit after control inferior vena cavography. Following filter removal, vena cavograms were obtained in all patients. Successful extraction was achieved in all but one case. Among these successful retrievals, additional manipulation using a femoral approach was needed when the apex of the filter was close to the IVC wall in two patients. No immediate IVC complications were observed according to the postimplantation cavography. Neither technical nor clinical differences between early and late filter retrieval were noticed. Our data confirm the safety of ALN filter retrieval up to 722 days after implantation. In infrequent cases, additional endovenous filter manipulation is needed to facilitate extraction.

  14. Cd doping of AlN via ion implantation studied with perturbed angular correlation

    CERN Document Server

    Kessler, Patrick; Miranda, Sérgio MC; Simon, R; Correia, João Guilherme; Johnston, Karl; Vianden, Reiner

    2012-01-01

    AlN with a wide bandgap of 6.2 eV is a promising candidate for ultraviolet light-emitting diodes and laser diodes. However, the production of the required p-type AlN is still challenging. As a possible dopant Cd was suggested among other Group II atoms (Be, Mg, and Zn). In this study the annealing condition of implanted Cd in AlN was investigated with the method of the perturbed angular correlation (PAC). Therefore radioactive $^{117}$Cd or $^{111m}$Cd ions were implanted into thin AlN films on sapphire substrate with an energy of 30 keV and fluences in the range of 10$^{11}$ ions/cm$^{2}$. After thorough annealing with a proximity cap of the same material most of the Cd-probes occupy substitutional lattice sites and almost all implantation damage can be annealed. This results in a distinct frequency in the PAC spectra which increases with temperature. In contrast to the formation of an indium nitrogen-vacancy complex observed with the probe $^{111}$In on substitutional Al-sites no defects are bound to substi...

  15. SAP-like ultrafine-grained Al composites dispersion strengthened with nanometric AlN

    International Nuclear Information System (INIS)

    Balog, M.; Krizik, P.; Yan, M.; Simancik, F.; Schaffer, G.B.; Qian, M.

    2013-01-01

    This paper reports the development of novel Sinter-Aluminum-Pulver (SAP)-like Al–AlN nanocomposites via replacing the native Al 2 O 3 thin films on fine Al powder with a large volume fraction of in situ formed nanometric AlN dispersoids. Fine gas-atomized Al powder (d 50 =1.3 µm) compacts were first partially nitrided at 590 °C in flowing nitrogen, controlled by a small addition of Sn (0.3–0.4 wt%), and subsequently consolidated by hot direct extrusion. The resulting Al–AlN composites consisted of submicrometric Al grains reinforced with nanometric AlN dispersoids together with some nanometric Al 2 O 3 dispersoids. An Al–13 vol% AlN nanocomposite fabricated this way achieved exceptional ultimate tensile strength of 227 MPa, yield strength of 195 MPa and Young's modulus of 66 GPa at 300 °C, superior to typical SAP materials and coarse grained Al–AlN composites. In addition, the Al–13 vol% AlN nanocomposite exhibited good thermal stability up to 500 °C. The strengthening mechanism is discussed

  16. Structural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrate

    KAUST Repository

    Sun, Haiding; Wu, Feng; Altahtamouni, Talal Mohammed Ahmad; Alfaraj, Nasir; Li, Kun; Detchprohm, Theeradetch; Dupuis, Russell; Li, Xiaohang

    2017-01-01

    The growth of high quality AlN epitaxial films relies on precise control of the initial growth stages. In this work, we examined the influence of the trimethylaluminum (TMAl) pretreatment of sapphire substrates on the structural properties, crystal quality and growth modes of heteroepitaxial AlN films on (0001) sapphire substrates. Without the pretreatment, the AlN films nucleated on the smooth surface but exhibited mixed crystallographic Al- (N-) polarity, resulting in rough AlN film surfaces. With increasing the pretreatment time from 1 to 5 s, the N-polarity started to be impeded. However, small islands were formed on sapphire surface due to the decompostion of TMAl. As a result, small voids became noticeable at the nucleation layer (NL) because the growth started as quasi three-dimensional (3D) but transformed to 2D mode as the film grew thicker and got coalesced, leading to smoother and Al-polar films. On the other hand, longer pretreatment time of 40 s formed large 3D islands on sapphire, and thus initiated a 3D-growth mode of the AlN film, generating Al-polar AlN nanocolumns with different facets, which resulted into rougher film surfaces. The epitaxial growth modes and their correlation with the AlN film crystal quality under different TMAl pretreatments are also discussed.

  17. Effects of AlN on the densification and mechanical properties of pressureless-sintered SiC ceramics

    Directory of Open Access Journals (Sweden)

    Qisong Li

    2016-02-01

    Full Text Available In the present work, SiC ceramics was fabricated with AlN using B4C and C as sintering aids by a solid-state pressureless-sintered method. The effects of AlN contents on the densification, mechanical properties, phase compositions, and microstructure evolutions of as-obtained SiC ceramics were thoroughly investigated. AlN was found to promote further densification of the SiC ceramics due to its evaporation over 1800 °C, transportation, and solidification in the pores resulted from SiC grain coarsening. The highest relative density of 99.65% was achieved for SiC sample with 15.0 wt% AlN by the pressureless-sintered method at 2130 °C for 1 h in Ar atmosphere. Furthermore, the fracture mechanism for SiC ceramics containing AlN tended to transfer from single transgranular fracture mode to both transgranular fracture and intergranular fracture modes when the sample with 30.0 wt% AlN sintered at 1900 °C for 1 h in Ar. Also, SiC ceramics with 30.0 wt% AlN exhibited the highest fracture toughness of 5.23 MPa m1/2 when sintered at 1900 °C.

  18. A computational study on the electronic and field emission properties of Mg and Si doped AlN nanocones

    Science.gov (United States)

    Saedi, Leila; Soleymanabadi, Hamed; Panahyab, Ataollah

    2018-05-01

    Following an experimental work, we explored the effect of replacing an Al atom of an AlN nanocone by Si or Mg atom on its electronic and field emission properties using density functional theory calculations. We found that both Si-doping and Mg-doping increase the electrical conductivity of AlN nanocone, but their influences on the filed emission properties are significantly different. The Si-doping increases the electron concentration of AlN nanocone and results in a large electron mobility and a low work function, whereas Mg-doping leads to a high hole concentration below the conduction level and increases the work function in agreement with the experimental results. It is predicted that Si-doped AlN nanocones show excellent filed emission performance with higher emitted electron current density compared to the pristine AlN nanocone. But the Mg-doping meaningfully decreases the emitted electron current density from the surface of AlN nanocone. The Mg-doping can increase the work function about 41.9% and the Si-doping can decrease it about 6.3%. The Mg-doping and Si-doping convert the AlN nanocone to a p-type and n-type semiconductors, respectively. Our results explain in a molecular level what observed in the experiment.

  19. Structural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrate

    KAUST Repository

    Sun, Haiding

    2017-08-08

    The growth of high quality AlN epitaxial films relies on precise control of the initial growth stages. In this work, we examined the influence of the trimethylaluminum (TMAl) pretreatment of sapphire substrates on the structural properties, crystal quality and growth modes of heteroepitaxial AlN films on (0001) sapphire substrates. Without the pretreatment, the AlN films nucleated on the smooth surface but exhibited mixed crystallographic Al- (N-) polarity, resulting in rough AlN film surfaces. With increasing the pretreatment time from 1 to 5 s, the N-polarity started to be impeded. However, small islands were formed on sapphire surface due to the decompostion of TMAl. As a result, small voids became noticeable at the nucleation layer (NL) because the growth started as quasi three-dimensional (3D) but transformed to 2D mode as the film grew thicker and got coalesced, leading to smoother and Al-polar films. On the other hand, longer pretreatment time of 40 s formed large 3D islands on sapphire, and thus initiated a 3D-growth mode of the AlN film, generating Al-polar AlN nanocolumns with different facets, which resulted into rougher film surfaces. The epitaxial growth modes and their correlation with the AlN film crystal quality under different TMAl pretreatments are also discussed.

  20. Coating of Si3N4 fine particles with AlN by fluidized bed-CVD; Ryudoso CVD ho ni yoru Si3N4 biryushi no AlN hifuku

    Energy Technology Data Exchange (ETDEWEB)

    Chiba, S.; Oyama, Y. [Hokkaido National Industrial Research Institute, Sapporo (Japan); Harima, K.; Kondo, K.; Shinohara, K. [Hokkaido University, Sapporo (Japan)

    1996-03-10

    Agglomerates of 100-250 {mu}m consisting of Si3N4 primary particles of 0.76 {mu}m were made with a rotary vibrating sieve. Si3N4 fine particles were coated with AlN by gas phase reaction with AlCl3 and NH3 in some fluidized beds of the agglomerates. The cross sectional distribution of AlN in the agglomerate was measured by EPMA analysis. As a result, uniform deposition of AlN was obtained at a relatively low reaction temperature and low gas velocity. 4 refs., 3 figs.

  1. A Novel Fully Depleted Air AlN Silicon-on-Insulator Metal-Oxide-Semiconductor Field Effect Transistor

    International Nuclear Information System (INIS)

    Yuan, Yang; Yong, Gao; Peng-Liang, Gong

    2008-01-01

    A novel fully depleted air AlN silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistor (MOS-FET) is presented, which can eliminate the self-heating effect and solve the problem that the off-state current of SOI MOSFETs increases and the threshold voltage characteristics become worse when employing a high thermal conductivity material as a buried layer. The simulation results reveal that the lattice temperature in normal SOI devices is 75 K higher than the atmosphere temperature, while the lattice temperature is just 4K higher than the atmosphere temperature resulting in less severe self-heating effect in air AlN SOI MOSFETs and AlN SOI MOSFETs. The on-state current of air AlN SOI MOSFETs is similar to the AlN SOI structure, and improves 12.3% more than that of normal SOI MOSFETs. The off-state current of AlN SOI is 6.7 times of normal SOI MOSFETs, while the counterpart of air AlN SOI MOSFETs is lower than that of SOI MOSFETs by two orders of magnitude. The threshold voltage change of air AlN SOI MOSFETs with different drain voltage is much less than that of AlN SOI devices, when the drain voltage is biased at 0.8 V, this difference is 28mV, so the threshold voltage change induced by employing high thermal conductivity material is cured. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  2. Local heteroepitaxy as an adhesion mechanism in aluminium coatings cold gas sprayed on AlN substrates

    International Nuclear Information System (INIS)

    Wüstefeld, Christina; Rafaja, David; Motylenko, Mykhaylo; Ullrich, Christiane; Drehmann, Rico; Grund, Thomas; Lampke, Thomas; Wielage, Bernhard

    2017-01-01

    Cold gas sprayed Al coatings deposited onto wurtzitic AlN substrates show excellent adhesion. As a possible adhesion mechanism, the local heteroepitaxy between Al and AlN was considered and verified experimentally in Al coatings, which were deposited using magnetron sputtering or cold gas spraying on single-crystalline and polycrystalline AlN substrates. Analysis of the local orientation relationships at the Al/AlN interfaces revealed that preferentially such lattice planes of Al align parallel with the upright lattice planes of AlN, which possess similar interplanar distances. The matching lattice planes in the Al coatings grew as continuations of the lattice planes in the AlN substrates. In all samples under study, the parallel alignment of the lattice planes {220}_A_l and {110}_A_l_N was found. Additional orientation relationships between Al and AlN arose if parallel lattice planes with similar interplanar spacing could be found in both counterparts via rotation of the lattice planes {220}_A_l around their normal direction. Still, the oriented growth of Al on AlN is only possible if Al atoms in the deposited coatings are mobile enough to rearrange along the AlN surface. Whereas the mobility of Al atoms in a magnetron sputtering process is expected to be sufficiently high, the intrinsic mobility of Al atoms in the cold gas sprayed particles is anticipated to be low. However, the auxiliary microstructure analyses have shown that local recrystallization and partial melting are two phenomena, which can facilitate the rearrangement of Al atoms within the cold gas sprayed coating.

  3. C-axis orientated AlN films deposited using deep oscillation magnetron sputtering

    International Nuclear Information System (INIS)

    Lin, Jianliang; Chistyakov, Roman

    2017-01-01

    Highlights: • Highly orientated AlN films were deposited by DOMS technique. • Controlled ion flux bombardment improved the texture and crystalline quality. • Excessive ion bombardment showed a detrimental effect on the c-axis orientation growth. • Improved c-axis alignment accompanied with stress relaxation with increasing film thickness. - Abstract: Highly c-axis orientated aluminum nitride (AlN) films were deposited on silicon (100) substrates by reactive deep oscillation magnetron sputtering (DOMS). No epitaxial favored bond layer and substrate heating were applied for assisting texture growth. The effects of the peak target current density (varied from 0.39 to 0.8 Acm"−"2) and film thickness (varied from 0.25 to 3.3 μm) on the c-axis orientation, microstructure, residual stress and mechanical properties of the AlN films were investigated by means of X-ray diffraction rocking curve methodology, transmission electron microscopy, optical profilometry, and nanoindentation. All AlN films exhibited a preferred orientation and compressive residual stresses. At similar film thicknesses, an increase in the peak target current density to 0.53 Acm"−"2 improved the orientation. Further increasing the peak target current density to above 0.53 Acm"−"2 showed limited contribution to the texture development. The study also showed that an increase in the thickness of the AlN films deposited by DOMS improved the c-axis alignment accompanied with a reduction in the residual stress.

  4. C-axis orientated AlN films deposited using deep oscillation magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Jianliang, E-mail: Jianliang.lin@swri.org [Southwest Research Institute, San Antonio, TX 78238 (United States); Chistyakov, Roman [Zpulser LLC, Mansfield, MA 02048 (United States)

    2017-02-28

    Highlights: • Highly <0001> orientated AlN films were deposited by DOMS technique. • Controlled ion flux bombardment improved the <0001> texture and crystalline quality. • Excessive ion bombardment showed a detrimental effect on the c-axis orientation growth. • Improved c-axis alignment accompanied with stress relaxation with increasing film thickness. - Abstract: Highly <0001> c-axis orientated aluminum nitride (AlN) films were deposited on silicon (100) substrates by reactive deep oscillation magnetron sputtering (DOMS). No epitaxial favored bond layer and substrate heating were applied for assisting texture growth. The effects of the peak target current density (varied from 0.39 to 0.8 Acm{sup −2}) and film thickness (varied from 0.25 to 3.3 μm) on the c-axis orientation, microstructure, residual stress and mechanical properties of the AlN films were investigated by means of X-ray diffraction rocking curve methodology, transmission electron microscopy, optical profilometry, and nanoindentation. All AlN films exhibited a <0001> preferred orientation and compressive residual stresses. At similar film thicknesses, an increase in the peak target current density to 0.53 Acm{sup −2} improved the <0001> orientation. Further increasing the peak target current density to above 0.53 Acm{sup −2} showed limited contribution to the texture development. The study also showed that an increase in the thickness of the AlN films deposited by DOMS improved the c-axis alignment accompanied with a reduction in the residual stress.

  5. Purely cubic action for string field theory

    Science.gov (United States)

    Horowitz, G. T.; Lykken, J.; Rohm, R.; Strominger, A.

    1986-01-01

    It is shown that Witten's (1986) open-bosonic-string field-theory action and a closed-string analog can be written as a purely cubic interaction term. The conventional form of the action arises by expansion around particular solutions of the classical equations of motion. The explicit background dependence of the conventional action via the Becchi-Rouet-Stora-Tyutin operator is eliminated in the cubic formulation. A closed-form expression is found for the full nonlinear gauge-transformation law.

  6. Nonlinear dynamics of quadratically cubic systems

    International Nuclear Information System (INIS)

    Rudenko, O V

    2013-01-01

    We propose a modified form of the well-known nonlinear dynamic equations with quadratic relations used to model a cubic nonlinearity. We show that such quadratically cubic equations sometimes allow exact solutions and sometimes make the original problem easier to analyze qualitatively. Occasionally, exact solutions provide a useful tool for studying new phenomena. Examples considered include nonlinear ordinary differential equations and Hopf, Burgers, Korteweg–de Vries, and nonlinear Schrödinger partial differential equations. Some problems are solved exactly in the space–time and spectral representations. Unsolved problems potentially solvable by the proposed approach are listed. (methodological notes)

  7. Direct Detection of the Ion Pair to Free Ions Transformation upon Complexation with an Ion Receptor in Non-Polar Solvents by using Conductometry.

    Science.gov (United States)

    Iseda, Kazuya; Kokado, Kenta; Sada, Kazuki

    2018-03-01

    In this study, we performed conductometry in various organic solvents to directly detect the transformation from tetrabutylammonium chloride ( TBACl ) ion-pair salt to the free ions through complexation with meso -octamethylcalix[4]pyrrole ( CP ), which is a well-known receptor for chloride anions. In the presence of CP , the conductivity of TBACl increases in various non-polar solvents, indicating that complexation with CP enhances the ionic dissociation of TBACl in such non-polar solvents. In other words, CP recognizes chloride as an ion-paired salt as well as a free anion in non-polar solvents. Additionally, the TBA(CP - Cl ) complex exhibited a considerably lower ion-pairing constant ( K ip ) than TBACl in non-polar solvents, resulting in enhanced conductivity. Based on these findings, we can conclude that complexation of an anion with a hydrophobic anion receptor will be useful for creating functional and stimuli-responsive soft materials in organic solvents using coulombic forces.

  8. Study of excess carrier dynamics in polar, semi-polar, and non-polar (In,Ga)N epilayers and QWs

    Energy Technology Data Exchange (ETDEWEB)

    Aleksiejunas, R. [Institute of Applied Research, Vilnius University, Sauletekio Ave. 9-III, 10222 Vilnius (Lithuania); Laser Research Center, Vilnius University, Sauletekio Ave. 10, 10222 Vilnius (Lithuania); Lubys, L.; Jarasiunas, K. [Institute of Applied Research, Vilnius University, Sauletekio Ave. 9-III, 10222 Vilnius (Lithuania); Vengris, M. [Laser Research Center, Vilnius University, Sauletekio Ave. 10, 10222 Vilnius (Lithuania); Wernicke, T.; Hoffmann, V.; Netzel, C.; Knauer, A.; Weyers, M. [Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12498 Berlin (Germany); Kneissl, M. [Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12498 Berlin (Germany); Institute of Solid State Physics, Technische Universitaet Berlin, Hardenbergstr. 36, 10623 Berlin (Germany)

    2011-07-15

    We studied carrier recombination and diffusion in GaN/sapphire templates, (In,Ga)N layers, and (In,Ga)N quantum well structures oriented along the polar [0001], semi-polar [11-22], and non-polar [11-20] orientations by means of light induced transient grating, differential transmission, and photoluminescence optical techniques. We show that the lifetime of excess carriers drops by orders of magnitude when changing the orientation from polar to non-polar, both in GaN templates and (In,Ga)N layers. We attribute the shorter lifetime to carrier trapping by extended structural defects that are more abundant in non-polar grown samples. In addition, we observe pronounced carrier localization effects in the semi- and non-polar layers. We show that thick (In,Ga)N layers inherit the properties of the GaN templates. However, the thin quantum well structures show a lower carrier trapping activity. So, a better electrical quality can be assumed as compared to the thick (In,Ga)N layers. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Ab initio density functional theory study of non-polar (10-10), (11-20) and semipolar {20-21} GaN surfaces

    Czech Academy of Sciences Publication Activity Database

    Mutombo, Pingo; Romanyuk, Olexandr

    2014-01-01

    Roč. 115, č. 20 (2014), "203508-1"-"203508-5" ISSN 0021-8979 Grant - others:AVČR(CZ) M100101201 Institutional support: RVO:68378271 Keywords : non-polar GaN * semipolar GaN * surface reconstructions * DFT Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.183, year: 2014

  10. An on-line normal-phase high performance liquid chromatography method for the rapid detection of radical scavengers in non-polar food matrixes

    NARCIS (Netherlands)

    Zhang, Q.; Klift, van der E.J.C.; Janssen, H.G.; Beek, van T.A.

    2009-01-01

    An on-line method for the rapid pinpointing of radical scavengers in non-polar mixtures like vegetable oils was developed. To avoid problems with dissolving the sample, normal-phase chromatography on bare silica gel was used with mixtures of hexane and methyl tert-butyl ether as the eluent. The high

  11. Dipaths and dihomotopies in a cubical complex

    DEFF Research Database (Denmark)

    Fajstrup, Lisbeth

    2005-01-01

    In the geometric realization of a cubical complex without degeneracies, a $\\Box$-set, dipaths and dihomotopies may not be combinatorial, i.e., not geometric realizations of combinatorial dipaths and equivalences. When we want to use geometric/topological tools to classify dipaths on the 1-skeleton...

  12. Some elements go cubic under pressure

    Czech Academy of Sciences Publication Activity Database

    Legut, Dominik

    2007-01-01

    Roč. 60, č. 10 (2007), s. 17-17 ISSN 0031-9228 Institutional research plan: CEZ:AV0Z20410507 Keywords : ab initio * polonium * cubic structure Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 5.133, year: 2007

  13. The Exact Limit of Some Cubic Towers

    DEFF Research Database (Denmark)

    Anbar Meidl, Nurdagül; Beelen, Peter; Nguyen, Nhut

    2017-01-01

    Recently, a new explicit tower of function fields was introduced by Bassa, Beelen, Garcia and Stichtenoth (BBGS). This resulted in currently the best known lower bound for Ihara’s constant in the case of non-prime finite fields. In particular over cubic fields, the tower’s limit is at least as go...

  14. Human Cytotoxic T Lymphocytes Form Dysfunctional Immune Synapses with B Cells Characterized by Non-Polarized Lytic Granule Release

    Directory of Open Access Journals (Sweden)

    Anna Kabanova

    2016-04-01

    Full Text Available Suppression of the cytotoxic T cell (CTL immune response has been proposed as one mechanism for immune evasion in cancer. In this study, we have explored the underlying basis for CTL suppression in the context of B cell malignancies. We document that human B cells have an intrinsic ability to resist killing by freshly isolated cytotoxic T cells (CTLs, but are susceptible to lysis by IL-2 activated CTL blasts and CTLs isolated from immunotherapy-treated patients with chronic lymphocytic leukemia (CLL. Impaired killing was associated with the formation of dysfunctional non-lytic immune synapses characterized by the presence of defective linker for activation of T cells (LAT signaling and non-polarized release of the lytic granules transported by ADP-ribosylation factor-like protein 8 (Arl8. We propose that non-lytic degranulation of CTLs are a key regulatory mechanism of evasion through which B cells may interfere with the formation of functional immune synapses by CTLs.

  15. Improved crystalline quality of AlN epitaxial layer on sapphire by introducing TMGa pulse flow into the nucleation stage

    Science.gov (United States)

    Wu, Hualong; Wang, Hailong; Chen, Yingda; Zhang, Lingxia; Chen, Zimin; Wu, Zhisheng; Wang, Gang; Jiang, Hao

    2018-05-01

    The crystalline quality of AlN epitaxial layers on sapphire substrates was improved by introducing trimethylgallium (TMGa) pulse flow into the growth of AlN nucleation layers. It was found that the density of both screw- and edge-type threading dislocations could be significantly reduced by introducing the TMGa pulse flow. With increasing TMGa pulse flow times, the lateral correlation length (i.e. the grain size) increases and the strain in the AlN epilayers changes from tensile state to compressive state. Unstrained AlN with the least dislocations and a smooth surface was obtained by introducing 2-times TMGa pulse flow. The crystalline improvement is attributed to enhanced lateral growth and improved crystalline orientation by the TMGa pulse flow.

  16. Electrochemical formation of AlN in molten LiCl-KCl-Li{sub 3}N systems

    Energy Technology Data Exchange (ETDEWEB)

    Goto, Takuya [Department of Fundamental Energy Science, Graduate School of Energy Science, Kyoto University, Sakyo, Kyoto 606-8501 (Japan)]. E-mail: goto@energy.kyoto-u.ac.jp; Iwaki, Takayuki [Department of Fundamental Energy Science, Graduate School of Energy Science, Kyoto University, Sakyo, Kyoto 606-8501 (Japan); Ito, Yasuhiko [Department of Fundamental Energy Science, Graduate School of Energy Science, Kyoto University, Sakyo, Kyoto 606-8501 (Japan)

    2005-01-30

    Electrochemical formation of aluminum nitride was investigated in molten LiCl-KCl-Li{sub 3}N systems at 723 K. When Al was anodically polarized at 1.0 V (versus Li{sup +}/Li), oxidation of nitride ions proceeded to form adsorbed nitrogen atoms, which reacted with the surface to form AlN film. The obtained nitrided film had a thickness of sub-micron order. The obtained nitrided layer consisted of two regions; the outer layer involving AlN and aluminum oxynitride and the inner layer involving metallic Al and AlN. When Al electrode was anodically polarized at 2.0 V, anodic dissolution of Al electrode occurred to give aluminum ions, which reacted with nitride ions in the melt to produce AlN particles (1-5 {mu}m of diameter) of wurtzite structure.

  17. Investigation of different mechanisms of GaN growth induced on AlN and GaN nucleation layers

    International Nuclear Information System (INIS)

    Tasco, V.; Campa, A.; Tarantini, I.; Passaseo, A.; Gonzalez-Posada, F.; Munoz, E.; Redondo-Cubero, A.; Lorenz, K.; Franco, N.

    2009-01-01

    The evolution of GaN growth on AlN and GaN nucleation layers is compared through morphological and structural analyses, including ion beam analysis. By using AlN nucleation layer grown at high temperature, improved crystalline quality is exhibited by 300 nm thin GaN epilayers. GaN (002) x-ray rocking curve as narrow as 168 arc sec and atomic-step surface morphology characterize such a thin GaN film on AlN. Defects are strongly confined into the first 50 nm of growth, whereas a fast laterally coherent growth is observed when increasing thickness, as an effect of high temperature AlN surface morphology and Ga adatom dynamics over this template

  18. Improved performance of GaN based light emitting diodes with ex-situ sputtered AlN nucleation layers

    Directory of Open Access Journals (Sweden)

    Shuo-Wei Chen

    2016-04-01

    Full Text Available The crystal quality, electrical and optical properties of GaN based light emitting diodes (LEDs with ex-situ sputtered physical vapor deposition (PVD aluminum nitride (AlN nucleation layers were investigated. It was found that the crystal quality in terms of defect density and x-ray diffraction linewidth was greatly improved in comparison to LEDs with in-situ low temperature GaN nucleation layer. The light output power was 3.7% increased and the reverse bias voltage of leakage current was twice on LEDs with ex-situ PVD AlN nucleation layers. However, larger compressive strain was discovered in LEDs with ex-situ PVD AlN nucleation layers. The study shows the potential and constrain in applying ex-situ PVD AlN nucleation layers to fabricate high quality GaN crystals in various optoelectronics.

  19. The role of Si as surfactant and donor in molecular-beam epitaxy of AlN

    International Nuclear Information System (INIS)

    Lebedev, V.; Morales, F.M.; Romanus, H.; Krischok, S.; Ecke, G.; Cimalla, V.; Himmerlich, M.; Stauden, T.; Cengher, D.; Ambacher, O.

    2005-01-01

    The growth of Si-doped AlN(0001) thin films on Al 2 O 3 (0001) substrates by plasma-induced molecular-beam epitaxy is reported. We have found that Si positively affects the epitaxy being an effective surfactant for AlN growth with a remarkable impact on the crystal quality. It was proven that the characteristic surface reconstruction sequences frequently related to the Al adatoms are obviously Si induced on AlN(0001) surfaces. It was also observed that heavy doping conditions result in volume segregation of Si on the threading dislocation network and in the formation of an amorphous (AlO)(SiO)N cap layer caused by surface oxidation of the accumulated Al and segregated Si. The electron affinity was measured to be smaller than 0.5 eV on the clean AlN surface after removing of the cap layer using Ar + sputtering

  20. Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma

    International Nuclear Information System (INIS)

    Goerke, Sebastian; Ziegler, Mario; Ihring, Andreas; Dellith, Jan; Undisz, Andreas; Diegel, Marco; Anders, Solveig; Huebner, Uwe; Rettenmayr, Markus; Meyer, Hans-Georg

    2015-01-01

    Highlights: • AlN films grown at 150 °C by ALD using trimethylaluminum and H 2 /N 2 -plasma. • Nearly stoichiometric AlN films (ratio Al:N = 0.938), polycrystalline by XRD/TEM. • Refractive index of n = 1.908 and low thermal conductivity of κ = 1.66 W/(m K). • Free-standing AlN membranes mechanically stable and buckling free (tensile strain). • Membrane patterning by focused ion beam etching possible. - Abstract: Aluminum nitride (AlN) thin films with thicknesses from 20 to 100 nm were deposited on silicon, amorphous silica, silicon nitride, and vitreous carbon by plasma enhanced atomic layer deposition (PE-ALD). Trimethylaluminum (TMA) and a H 2 /N 2 plasma mixture were used as precursors. We investigated the influence of deposition temperature and plasma parameters on the growth characteristics and the film properties of AlN. Stable PE-ALD growth conditions were obtained from 150 °C to the highest tested temperature of 300 °C. The growth rate, refractive index, and thickness homogeneity on 4″ wafers were determined by spectroscopic ellipsometry. X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM) and Rutherford backscattering spectrometry (RBS) were carried out to analyze crystallinity and composition of the films. Furthermore, the thermal conductivity and the film stress were determined. The stress was sufficiently low to fabricate mechanically stable free-standing AlN membranes with lateral dimensions of up to 2.2 × 2.2 mm 2 . The membranes were patterned with focused ion beam etching. Thus, these AlN membranes qualify as dielectric support material for a variety of potential applications

  1. Band alignment of HfO{sub 2}/AlN heterojunction investigated by X-ray photoelectron spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Ye, Gang [School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Wang, Hong, E-mail: ewanghong@ntu.edu.sg [School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); CNRS-International-NTU-THALES Research Alliances/UMI 3288, 50 Nanyang Drive, Singapore 637553 (Singapore); Ji, Rong [Data Storage Institute, Agency for Science Technology and Research (A-STAR), Singapore 117608 (Singapore)

    2016-04-18

    The band alignment between AlN and Atomic-Layer-Deposited (ALD) HfO{sub 2} was determined by X-ray photoelectron spectroscopy (XPS). The shift of Al 2p core-levels to lower binding energies with the decrease of take-off angles θ indicated upward band bending occurred at the AlN surface. Based on the angle-resolved XPS measurements combined with numerical calculations, valence band discontinuity ΔE{sub V} of 0.4 ± 0.2 eV at HfO{sub 2}/AlN interface was determined by taking AlN surface band bending into account. By taking the band gap of HfO{sub 2} and AlN as 5.8 eV and 6.2 eV, respectively, a type-II band line-up was found between HfO{sub 2} and AlN.

  2. Memory and Electrical Properties of (100-Oriented AlN Thin Films Prepared by Radio Frequency Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Maw-Shung Lee

    2014-01-01

    Full Text Available The (100-oriented aluminum nitride (AlN thin films were well deposited onto p-type Si substrate by radio frequency (RF magnetron sputtering method. The optimal deposition parameters were the RF power of 350 W, chamber pressure of 9 mTorr, and nitrogen concentration of 50%. Regarding the physical properties, the microstructure of as-deposited (002- and (100-oriented AlN thin films were obtained and compared by XRD patterns and TEM images. For electrical properties analysis, we found that the memory windows of (100-oriented AlN thin films are better than those of (002-oriented thin films. Besides, the interface and interaction between the silicon and (100-oriented AlN thin films was serious important problem. Finally, the current transport models of the as-deposited and annealed (100-oriented AlN thin films were also discussed. From the results, we suggested and investigated that large memory window of the annealed (100-oriented AlN thin films was induced by many dipoles and large electric field applied.

  3. Structural and optical studies of GaN pn-junction with AlN buffer layer grown on Si (111) by RF plasma enhanced MBE

    Energy Technology Data Exchange (ETDEWEB)

    Yusoff, Mohd Zaki Mohd; Hassan, Zainuriah; Woei, Chin Che; Hassan, Haslan Abu; Abdullah, Mat Johar [Nano-Optoelectronics Research and Technology Laboratory School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia and Department of Applied Sciences Universiti Teknologi MARA (UiTM) 13500 Permatang Pauh, Penang (Malaysia); Department of Applied Sciences Universiti Teknologi MARA (UiTM) 13500 Permatang Pauh, Penang (Malaysia)

    2012-06-29

    GaN pn-junction grown on silicon substrates have been the focus in a number of recent reports and further effort is still necessary to improve its crystalline quality for practical applications. GaN has the high n-type background carrier concentration resulting from native defects commonly thought to be nitrogen vacancies. In this work, we present the growth of pn-junction of GaN on Si (111) substrate using RF plasma-enhanced molecular beam epitaxy (MBE). Both of the layers show uniformity with an average thickness of 0.709 {mu}m and 0.095 {mu}m for GaN and AlN layers, respectively. The XRD spectra indicate that no sign of cubic phase of GaN are found, so it is confirmed that the sample possessed hexagonal structure. It was found that all the allowed Raman optical phonon modes of GaN, i.e. the E2 (low), E1 (high) and A1 (LO) are clearly visible.

  4. Luminescence dynamics in AlGaN with AlN content of 20%

    KAUST Repository

    Soltani, Sonia; Bouzidi, Mouhamed; Touré , Alhousseynou; Gerhard, Marina; Halidou, Ibrahim; Chine, Zied; El Jani, Belgacem; Shakfa, Mohammad Khaled

    2016-01-01

    Optical properties and carrier dynamics of an AlGaN layer with an AlN content of 20% have been studied using time-resolved photoluminescence (TR-PL). Despite the high density of defects due to the relatively high AlN content, an intense PL emission from the sample has been detected. Low-temperature PL spectra exhibit several features, accompanied by a strong emission-wavelength dependence of the PL decay time. A significant red-shift of more than 200 meV from the band edge is recorded for the PL emission from localized states. Temperature-dependent PL spectra of the sample are dominated by the emission from localized states and, furthermore, show a relatively slight decrease by almost an order of magnitude with increasing temperature from 45 to 300 K. Our observations indicate strong, spatial localization effects of carriers, resulting in an increase in the radiative recombination rate.

  5. Luminescence dynamics in AlGaN with AlN content of 20%

    KAUST Repository

    Soltani, Sonia

    2016-12-15

    Optical properties and carrier dynamics of an AlGaN layer with an AlN content of 20% have been studied using time-resolved photoluminescence (TR-PL). Despite the high density of defects due to the relatively high AlN content, an intense PL emission from the sample has been detected. Low-temperature PL spectra exhibit several features, accompanied by a strong emission-wavelength dependence of the PL decay time. A significant red-shift of more than 200 meV from the band edge is recorded for the PL emission from localized states. Temperature-dependent PL spectra of the sample are dominated by the emission from localized states and, furthermore, show a relatively slight decrease by almost an order of magnitude with increasing temperature from 45 to 300 K. Our observations indicate strong, spatial localization effects of carriers, resulting in an increase in the radiative recombination rate.

  6. Polar and non-polar heterocyclic amines in cooked fish and meat products and their corresponding pan residues.

    Science.gov (United States)

    Skog, K; Augustsson, K; Steineck, G; Stenberg, M; Jägerstad, M

    1997-06-01

    Fourteen cooked dishes with their corresponding pan residues were analysed for polar and non-polar heterocyclic amines using HPLC. The choice of foods, including beef, pork, poultry, game, fish, egg and sausages, was based on an investigation of an elderly population in Stockholm participating in an analytical epidemiological case-control study on cancer risks after intake of heterocyclic amines. The food items were prepared using normal household cooking practices, and to reflect the wide range of surface browning of the cooked dishes that would be encountered in this population, four cooking temperatures were used in the range 150-225 degrees C. For all food samples, the total amount of heterocyclic amines formed at 150 degrees C was less than 1 ng/g cooked product, and at 175 degrees C less than 2 ng/g. The highest concentrations of heterocyclic amines were detected in fillet of pork, reindeer meat and chicken breast fried at 200 and 225 degrees C and their corresponding pan residues. The total sum of 2-amino-3,8-dimethylimidazo-[4,5-f]quinoxaline, 2-amino-3,4,8-trimethylimidazo[4,5-f]quinoxaline and 2-amino-1-methyl-6-phenylimidazo[4,5-b]pyridine was about 1 microgram per 100 g portion (including pan residues) for reindeer meat and chicken breast, and between 1.9 and 6.3 micrograms per 100-g portion for fillet of pork. PhIP was the most abundant heterocyclic amine, identified in 73 of 84 samples, and the highest concentration of PhIP, 32.0 ng/g, was found in the pan residue from fillet of pork cooked at 225 degrees C. The non-polar heterocyclic amines 3-amino-1,4-dimethyl-5H-pyrido[4,3-b]indole and 3-amino-1-methyl-5H-pyrido[4,3-b]indole were detected in the range of 0.5-7.4 ng/g in most foods cooked at 225 degrees C, and also in meat sauce prepared at 200 and 175 degrees C. The other heterocyclic amines tested for: 2-amino-3-methylimidazo-[4,5-f]quinoline, 2-amino-3,4-dimethylimidazo[4,5-f]quinoline, 2-amino-6-methyl-pyrido-[1,2-a:3',2'-d]-imidazole and 2

  7. Non-polar organic compounds in marine aerosols over the northern South China Sea: Influence of continental outflow.

    Science.gov (United States)

    Zhao, Yan; Zhang, Yingyi; Fu, Pingqing; Ho, Steven Sai Hang; Ho, Kin Fai; Liu, Fobang; Zou, Shichun; Wang, Shan; Lai, Senchao

    2016-06-01

    Filter samples of total suspended particle (TSP) collected during a cruise campaign over the northern South China Sea (SCS) from September to October 2013 were analyzed for non-polar organic compounds (NPOCs) as well as organic carbon (OC), elemental carbon (EC) and water-soluble ions. A total of 115 NPOCs species in groups of n-alkanes, polycyclic aromatic hydrocarbons (PAHs), iso-/antiso-alkanes, hopanes, steranes, methylalkanes, branched alkanes, cycloalkanes, alkenes and phthalates were detected. The characteristics of NPOCs in marine TSP samples were investigated to understand the sources from the Asian continent and other regions. The concentrations of total NPOCs ranged from 19.8 to 288.2 ng/m(3) with an average of 87.9 ng/m(3), which accounted for 0.8-1.7% (average 1.0%) of organic matter (OM). n-Alkanes was the predominant group, accounting for 43.1-79.5%, followed by PAHs (5.5-44.4%) and hopanes (1.6-11.4%). We found that primary combustion (biomass burning/fossil fuel combustion) was the dominant source for the majority of NPOCs (89.1%). Biomass burning in southern/southeastern China via long-range transport was proposed to be a major contributor of NPOCs in marine aerosols over the northern SCS, suggested by the significant correlations between nss-K(+) and NPOCs groups as well as the analysis of air mass back-trajectory and fire spots. For the samples with strong continental influence, the strong enhancement in concentrations of n-alkanes, PAHs, hopanes and steranes were attributed to fossil fuel (coal/petroleum) combustion. In addition, terrestrial plants waxes were another contributor to NPOCs. Copyright © 2016 Elsevier Ltd. All rights reserved.

  8. Antidiabetic, cytotoxic, antioxidant and antitrematodal medicinal efficacy of polar and non-polar phytochemicals of Balanites aegyptiaca Del.

    Directory of Open Access Journals (Sweden)

    Hanan Abd Al-Hay Saied Al-Ashaal

    2017-11-01

    Full Text Available Objective: To investigate the biological activities of polar and non-polar extracts of Balanites aegyptiaca fruits. Methods: Antihyperglycemic activity using alloxan induced diabetic rats was evaluated. In vitro cytotoxicity against human carcinoma cell lines activity in addition to antioxidant and antitrematodal effects were investigated. Phytochemicals were determined using chromatographic and spectral analyses including TLC, GC and LC/MS/MS methods. Results: The reduction in blood glucose level reached 64.13%, 69.07% and 77.01% for hexane, chloroform and methanol extract, respectively. Isolated organs and histopathological examination illustrated improvement in treated animal's pancreas which is the master gland in controlling glucose level. The highest in vitro free radical scavenging capacity was achieved by chloroform extract (75.72%. Meanwhile, hexane and methanol extracts exhibited 44.01% and 41.77% scavenging capacity, respectively. Cytotoxic activity against human carcinoma cell lines illustrated efficacious influence against brain, liver, lung, breast and lymphoblastic leukemia cell lines. Brain cell line was the most susceptible cell line by both chloroform and methanol extracts. In vitro antitrematodal effectiveness showed that 100% mortality of Schistosoma worms was induced at the 3rd and 5th days for methanol and chloroform extracts. Meanwhile, both extracts exhibited antifasciolosis activity with LC50 of 63.19 and 55.15 mg/L, respectively. Conclusions: The current results illustrated that Balanites aegyptiaca phytochemicals induced potent hypoglycemic activity and potent to moderate antioxidant and cytotoxic effects. Chloroform and methanol extracts were found to have antitrematodal efficacy against Schistosoma mansoni and Fasciola gigantica hepatic worms.

  9. Integrable peakon equations with cubic nonlinearity

    International Nuclear Information System (INIS)

    Hone, Andrew N W; Wang, J P

    2008-01-01

    We present a new integrable partial differential equation found by Vladimir Novikov. Like the Camassa-Holm and Degasperis-Procesi equations, this new equation admits peaked soliton (peakon) solutions, but it has nonlinear terms that are cubic, rather than quadratic. We give a matrix Lax pair for V Novikov's equation, and show how it is related by a reciprocal transformation to a negative flow in the Sawada-Kotera hierarchy. Infinitely many conserved quantities are found, as well as a bi-Hamiltonian structure. The latter is used to obtain the Hamiltonian form of the finite-dimensional system for the interaction of N peakons, and the two-body dynamics (N = 2) is explicitly integrated. Finally, all of this is compared with some analogous results for another cubic peakon equation derived by Zhijun Qiao. (fast track communication)

  10. Quasiparticle Interference on Cubic Perovskite Oxide Surfaces.

    Science.gov (United States)

    Okada, Yoshinori; Shiau, Shiue-Yuan; Chang, Tay-Rong; Chang, Guoqing; Kobayashi, Masaki; Shimizu, Ryota; Jeng, Horng-Tay; Shiraki, Susumu; Kumigashira, Hiroshi; Bansil, Arun; Lin, Hsin; Hitosugi, Taro

    2017-08-25

    We report the observation of coherent surface states on cubic perovskite oxide SrVO_{3}(001) thin films through spectroscopic-imaging scanning tunneling microscopy. A direct link between the observed quasiparticle interference patterns and the formation of a d_{xy}-derived surface state is supported by first-principles calculations. We show that the apical oxygens on the topmost VO_{2} plane play a critical role in controlling the coherent surface state via modulating orbital state.

  11. HRTEM studies of dislocations in cubic BN

    International Nuclear Information System (INIS)

    Nistor, L.C.; Tendeloo, G. van; Dinca, G.

    2004-01-01

    The atomic structure of dislocations in cubic boron nitride has been investigated by high resolution transmission electron microscopy. Most of the perfect dislocations, screw and 60 edge, are dissociated. A 60 dislocation which was undissociated has been analysed. Computer simulation is performed in an attempt to characterise the core structure. Twinning dislocations and dislocations resulting from the intersection of stacking faults are also revealed. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. HRTEM studies of dislocations in cubic BN

    Energy Technology Data Exchange (ETDEWEB)

    Nistor, L.C. [National Institute for Materials Physics, P.O. Box MG-7 Magurele, 077125 Bucharest (Romania); Tendeloo, G. van [University of Antwerp, EMAT, Groenenborgerlaan 171, 2020 Antwerp (Belgium); Dinca, G. [Dacia Synthetic Diamond Factory, Timisoara av. 5, P.O. Box 58-52, 077350 Bucharest (Romania)

    2004-09-01

    The atomic structure of dislocations in cubic boron nitride has been investigated by high resolution transmission electron microscopy. Most of the perfect dislocations, screw and 60 edge, are dissociated. A 60 dislocation which was undissociated has been analysed. Computer simulation is performed in an attempt to characterise the core structure. Twinning dislocations and dislocations resulting from the intersection of stacking faults are also revealed. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. AFM imaging and fractal analysis of surface roughness of AlN epilayers on sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Dallaeva, Dinara, E-mail: dinara.dallaeva@yandex.ru [Brno University of Technology, Faculty of Electrical Engineering and Communication, Physics Department, Technická 8, 616 00 Brno (Czech Republic); Ţălu, Ştefan [Technical University of Cluj-Napoca, Faculty of Mechanical Engineering, Department of AET, Discipline of Descriptive Geometry and Engineering Graphics, 103-105 B-dul Muncii Street, Cluj-Napoca 400641, Cluj (Romania); Stach, Sebastian [University of Silesia, Faculty of Computer Science and Materials Science, Institute of Informatics, Department of Biomedical Computer Systems, ul. Będzińska 39, 41-205 Sosnowiec (Poland); Škarvada, Pavel; Tománek, Pavel; Grmela, Lubomír [Brno University of Technology, Faculty of Electrical Engineering and Communication, Physics Department, Technická 8, 616 00 Brno (Czech Republic)

    2014-09-01

    Graphical abstract: - Highlights: • We determined the complexity of 3D surface roughness of aluminum nitride layers. • We used atomic force microscopy and analyzed their fractal geometry. • We determined the fractal dimension of surface roughness of aluminum nitride layers. • We determined the dependence of layer morphology on substrate temperature. - Abstract: The paper deals with AFM imaging and characterization of 3D surface morphology of aluminum nitride (AlN) epilayers on sapphire substrates prepared by magnetron sputtering. Due to the effect of temperature changes on epilayer's surface during the fabrication, a surface morphology is studied by combination of atomic force microscopy (AFM) and fractal analysis methods. Both methods are useful tools that may assist manufacturers in developing and fabricating AlN thin films with optimal surface characteristics. Furthermore, they provide different yet complementary information to that offered by traditional surface statistical parameters. This combination is used for the first time for measurement on AlN epilayers on sapphire substrates, and provides the overall 3D morphology of the sample surfaces (by AFM imaging), and reveals fractal characteristics in the surface morphology (fractal analysis)

  14. CVD of SiC and AlN using cyclic organometallic precursors

    Science.gov (United States)

    Interrante, L. V.; Larkin, D. J.; Amato, C.

    1992-01-01

    The use of cyclic organometallic molecules as single-source MOCVD precursors is illustrated by means of examples taken from our recent work on AlN and SiC deposition, with particular focus on SiC. Molecules containing (AlN)3 and (SiC)2 rings as the 'core structure' were employed as the source materials for these studies. The organoaluminum amide, (Me2AlNH2)3, was used as the AlN source and has been studied in a molecular beam sampling apparatus in order to determine the gas phase species present in a hot-wall CVD reactor environment. In the case of SiC CVD, a series of disilacyclobutanes (Si(XX')CH2)2 (with X and X' = H, CH3, and CH2SiH2CH3), were examined in a cold-wall, hot-stage CVD reactor in order to compare their relative reactivities and prospective utility as single-source CVD precursors. The parent compound, disilacyclobutane, (SiH2CH2)2, was found to exhibit the lowest deposition temperature (ca. 670 C) and to yield the highest purity SiC films. This precursor gave a highly textured, polycrystalline film on the Si(100) substrates.

  15. Influence of TMAl preflow on AlN epitaxy on sapphire

    KAUST Repository

    Sun, Haiding; Wu, Feng; Park, Young Jae; Al tahtamouni, T. M.; Li, Kuang-Hui; Alfaraj, Nasir; Detchprohm, Theeradetch; Dupuis, Russell D.; Li, Xiaohang

    2017-01-01

    The trimethylaluminum (TMAl) preflow process has been widely applied on sapphire substrates prior to growing Al-polar AlN films by metalorganic chemical vapor deposition. However, it has been unclear how the TMAl preflow process really works. In this letter, we reported on carbon's significance in the polarity and growth mode of AlN films due to the TMAl preflow. Without the preflow, no trace of carbon was found at the AlN/sapphire interface and the films possessed mixed Al- and N-polarity. With the 5 s preflow, carbon started to precipitate due to the decomposition of TMAl, forming scattered carbon-rich clusters which were graphitic carbon. It was discovered that the carbon attracted surrounding oxygen impurity atoms and consequently suppressed the formation of AlxOyNz and thus N-polarity. With the 40 s preflow, the significant presence of carbon clusters at the AlN/sapphire interface was observed. While still attracting oxygen and preventing the N-polarity, the carbon clusters served as randomly distributed masks to further induce a 3D growth mode for the AlN growth. The corresponding epitaxial growth mode change is discussed.

  16. An Experimental Study on Heat Conduction and Thermal Contact Resistance for the AlN Flake

    Directory of Open Access Journals (Sweden)

    Huann-Ming Chou

    2013-01-01

    Full Text Available The electrical technology has been a fast development over the past decades. Moreover, the tendency of microelements and dense division multiplex is significantly for the electrical industries. Therefore, the high thermal conductible and electrical insulating device will be popular and important. It is well known that AlN still maintains stablility in the high temperature. This is quite attractive for the research and development department. Moreover, the thermal conduct coefficient of AlN is several times larger than the others. Therefore, it has been thought to play an important role for the radiator of heat source in the future. Therefore, this paper is focused on the studies of heat conduction and thermal contact resistance between the AlN flake and the copper specimens. The heating temperatures and the contact pressures were selected as the experimental parameters. According to the experimental results, the materials are soft and the real contact areas between the interfaces significantly increase under higher temperatures. As a result, the thermal contact resistance significantly decreases and the heat transfer rate increases with increasing the heating temperature or the contact pressures.

  17. Optical Properties Dependence with Gas Pressure in AlN Films Deposited by Pulsed Laser Ablation

    International Nuclear Information System (INIS)

    Perez, J A; Riascos, H; Caicedo, J C; Cabrera, G; Yate, L

    2011-01-01

    AlN films were deposited by pulsed laser deposition technique (PLD) using an Nd: YAG laser (λ = 1064 nm). The films were deposited in a nitrogen atmosphere as working gas; the target was an aluminum high purity (99.99%). The films were deposited with a laser fluence of 7 J/cm2 for 10 minutes on silicon (100) substrates. The substrate temperature was 300 deg. C and the working pressure was varied from 3 mtorr to 11 mtorr. The thickness measured by profilometer was 150 nm for all films. The crystallinity was observed via XRD pattern, the morphology and composition of the films were studied using scanning electron microscopy (SEM) and Energy Dispersive X-ray analysis (EDX), respectively. The optical reflectance spectra and color coordinates of the films were obtained by optical spectral reflectometry technique in the range of 400 cm-1- 900 cm-1 by an Ocean Optics 2000 spectrophotometer. In this work, a clear dependence of the reflectance, dominant wavelength and color purity was found in terms of the applied pressure to the AlN films. A reduction in reflectance of about 55% when the pressure was increased from 3 mtorr to 11 mtorr was observed. This paper deals with the formation of AlN thin films as promising materials for the integration of SAW devices on Si substrates due to their good piezoelectric properties and the possibility of deposition at low temperature compatible with the manufacturing of Si integrated circuits.

  18. Influence of TMAl preflow on AlN epitaxy on sapphire

    KAUST Repository

    Sun, Haiding

    2017-05-12

    The trimethylaluminum (TMAl) preflow process has been widely applied on sapphire substrates prior to growing Al-polar AlN films by metalorganic chemical vapor deposition. However, it has been unclear how the TMAl preflow process really works. In this letter, we reported on carbon\\'s significance in the polarity and growth mode of AlN films due to the TMAl preflow. Without the preflow, no trace of carbon was found at the AlN/sapphire interface and the films possessed mixed Al- and N-polarity. With the 5 s preflow, carbon started to precipitate due to the decomposition of TMAl, forming scattered carbon-rich clusters which were graphitic carbon. It was discovered that the carbon attracted surrounding oxygen impurity atoms and consequently suppressed the formation of AlxOyNz and thus N-polarity. With the 40 s preflow, the significant presence of carbon clusters at the AlN/sapphire interface was observed. While still attracting oxygen and preventing the N-polarity, the carbon clusters served as randomly distributed masks to further induce a 3D growth mode for the AlN growth. The corresponding epitaxial growth mode change is discussed.

  19. Optical Properties Dependence with Gas Pressure in AlN Films Deposited by Pulsed Laser Ablation

    Energy Technology Data Exchange (ETDEWEB)

    Perez, J A; Riascos, H [Departamento de Fisica, Universidad Tecnologica de Pereira, Grupo plasma Laser y Aplicaciones A.A 097 (Colombia); Caicedo, J C [Grupo pelIculas delgadas, Universidad del Valle, Cali (Colombia); Cabrera, G; Yate, L, E-mail: jcaicedoangulo@gmail.com [Department de Fisica Aplicada i Optica, Universitat de Barcelona, Catalunya (Spain)

    2011-01-01

    AlN films were deposited by pulsed laser deposition technique (PLD) using an Nd: YAG laser ({lambda} = 1064 nm). The films were deposited in a nitrogen atmosphere as working gas; the target was an aluminum high purity (99.99%). The films were deposited with a laser fluence of 7 J/cm2 for 10 minutes on silicon (100) substrates. The substrate temperature was 300 deg. C and the working pressure was varied from 3 mtorr to 11 mtorr. The thickness measured by profilometer was 150 nm for all films. The crystallinity was observed via XRD pattern, the morphology and composition of the films were studied using scanning electron microscopy (SEM) and Energy Dispersive X-ray analysis (EDX), respectively. The optical reflectance spectra and color coordinates of the films were obtained by optical spectral reflectometry technique in the range of 400 cm-1- 900 cm-1 by an Ocean Optics 2000 spectrophotometer. In this work, a clear dependence of the reflectance, dominant wavelength and color purity was found in terms of the applied pressure to the AlN films. A reduction in reflectance of about 55% when the pressure was increased from 3 mtorr to 11 mtorr was observed. This paper deals with the formation of AlN thin films as promising materials for the integration of SAW devices on Si substrates due to their good piezoelectric properties and the possibility of deposition at low temperature compatible with the manufacturing of Si integrated circuits.

  20. Optical, Structural and Paramagnetic Properties of Eu-Doped Ternary Sulfides ALnS2 (A = Na, K, Rb; Ln = La, Gd, Lu, Y

    Directory of Open Access Journals (Sweden)

    Vítězslav Jarý

    2015-10-01

    Full Text Available Eu-doped ternary sulfides of general formula ALnS2 (A = Na, K, Rb; Ln = La, Gd, Lu, Y are presented as a novel interesting material family which may find usage as X-ray phosphors or solid state white light emitting diode (LED lighting. Samples were synthesized in the form of transparent crystalline hexagonal platelets by chemical reaction under the flow of hydrogen sulfide. Their physical properties were investigated by means of X-ray diffraction, time-resolved photoluminescence spectroscopy, electron paramagnetic resonance, and X-ray excited fluorescence. Corresponding characteristics, including absorption, radioluminescence, photoluminescence excitation and emission spectra, and decay kinetics curves, were measured and evaluated in a broad temperature range (8–800 K. Calculations including quantum local crystal field potential and spin-Hamiltonian for a paramagnetic particle in D3d local symmetry and phenomenological model dealing with excited state dynamics were performed to explain the experimentally observed features. Based on the results, an energy diagram of lanthanide energy levels in KLuS2 is proposed. Color model xy-coordinates are used to compare effects of dopants on the resulting spectrum. The application potential of the mentioned compounds in the field of white LED solid state lighting or X-ray phosphors is thoroughly discussed.

  1. Minimal knotted polygons in cubic lattices

    International Nuclear Information System (INIS)

    Van Rensburg, E J Janse; Rechnitzer, A

    2011-01-01

    In this paper we examine numerically the properties of minimal length knotted lattice polygons in the simple cubic, face-centered cubic, and body-centered cubic lattices by sieving minimal length polygons from a data stream of a Monte Carlo algorithm, implemented as described in Aragão de Carvalho and Caracciolo (1983 Phys. Rev. B 27 1635), Aragão de Carvalho et al (1983 Nucl. Phys. B 215 209) and Berg and Foester (1981 Phys. Lett. B 106 323). The entropy, mean writhe, and mean curvature of minimal length polygons are computed (in some cases exactly). While the minimal length and mean curvature are found to be lattice dependent, the mean writhe is found to be only weakly dependent on the lattice type. Comparison of our results to numerical results for the writhe obtained elsewhere (see Janse van Rensburg et al 1999 Contributed to Ideal Knots (Series on Knots and Everything vol 19) ed Stasiak, Katritch and Kauffman (Singapore: World Scientific), Portillo et al 2011 J. Phys. A: Math. Theor. 44 275004) shows that the mean writhe is also insensitive to the length of a knotted polygon. Thus, while these results for the mean writhe and mean absolute writhe at minimal length are not universal, our results demonstrate that these values are quite close the those of long polygons regardless of the underlying lattice and length

  2. Neutrosophic Cubic MCGDM Method Based on Similarity Measure

    Directory of Open Access Journals (Sweden)

    Surapati Pramanik

    2017-06-01

    Full Text Available The notion of neutrosophic cubic set is originated from the hybridization of the concept of neutrosophic set and interval valued neutrosophic set. We define similarity measure for neutrosophic cubic sets and prove some of its basic properties.

  3. Spinning solitons in cubic-quintic nonlinear media

    Indian Academy of Sciences (India)

    Spinning solitons in cubic-quintic nonlinear media ... features of families of bright vortex solitons (doughnuts, or 'spinning' solitons) in both conservative and dissipative cubic-quintic nonlinear media. ... Pramana – Journal of Physics | News.

  4. Chemical characterization by GC-MS and phytotoxic potential of non-polar and polar fractions of seeds of Dioteryx odorata (Aubl. Willd. from Venezuelan regions

    Directory of Open Access Journals (Sweden)

    Alberto de J. Oliveros-Bastidas

    2013-01-01

    Full Text Available Dipteryx odorata (Aubl. Willd. is a tall arboreal species native to Central and Northern South America. This paper describes the chemical characterization and phytotoxic potential of polar and non-polar extracts from D. odorata seeds. Structural determinations were accomplished by chemical derivatization and analyzed by GC/MS. The chemical composition of the non-polar fraction (hexane and dichloromethane presented fatty acids as major constituent. Medium polar and polar fractions (ethyl acetate and ethanol: water contained carboxylic acid and high 6,7-Dyhidroxycoumarin-β-D-glucopyranoside content, not previously reported for seeds of D. odorata. Extracts showed a significant level of phytotoxic activity, correlated to the content of coumarin derivatives, predominantly in the polar fraction.

  5. On flotation separation of oxo-anions of transition metals by the use of fine-emulsified solutions of cationic collector in non-polar liquids

    International Nuclear Information System (INIS)

    Skrylev, L.D.; Purich, A.N.; Babinets, S.K.

    1980-01-01

    Experimentally shown is a principle possibility of flotation separation of oxo-anions of transition metals by the use of fine-emulsified solutions of cationic collector in non-polar liquids. Ammonium vanadate and sodium tuno.state solutions have been the objects of study. Hexadezilamine has been used as collector. The collector has been introduced in the form of hexadecylamine emulsions in n-decane, in tetrachloromethane or alcohol. Optimum pH value ranges are determined for separation processes

  6. Conversion of polar and non-polar algae oil lipids to fatty acid methyl esters with solid acid catalysts--A model compound study.

    Science.gov (United States)

    Asikainen, Martta; Munter, Tony; Linnekoski, Juha

    2015-09-01

    Bio-based fuels are becoming more and more important due to the depleting fossil resources. The production of biodiesel from algae oil is challenging compared to terrestrial vegetable oils, as algae oil consists of polar fatty acids, such as phospholipids and glycolipids, as well as non-polar triglycerides and free fatty acids common in vegetable oils. It is shown that a single sulphonated solid acid catalyst can perform the esterification and transesterification reactions of both polar and non-polar lipids. In mild reaction conditions (60-70 °C) Nafion NR50 catalyst produces methyl palmitate (FAME) from the palmitic acid derivatives of di-, and tri-glyceride, free fatty acid, and phospholipid with over 80% yields, with the glycolipid derivative giving nearly 40% yields of FAME. These results demonstrate how the polar and non-polar lipid derivatives of algal oil can be utilised as feedstocks for biodiesel production with a single catalyst in one reaction step. Copyright © 2015 Elsevier Ltd. All rights reserved.

  7. Thermal properties of some small peptides (N-acetyl-amino acid-N′-methylamides) with non-polar side groups

    International Nuclear Information System (INIS)

    Badea, Elena; Della Gatta, Giuseppe; Pałecz, Bartłomiej

    2014-01-01

    Highlights: • T fus and Δ fus H m of methylamides of N-acetyl substituted non-polar amino acids were measured. • T fus and Δ fus H m increased as a function of the molar mass of the alkyl side chains. • DL racemates showed T fus of about 40 °C lower than those of the corresponding pure L enantiomers. • Ideal solubility of solids at T = 298.15 K was estimated based on their T fus and Δ fus S m . - Abstract: Temperatures and molar enthalpies of fusion of a series of uncharged small peptides, namely the methylamides of N-acetyl substituted glycine, α-amino-butyric acid, alanine, valine, norvaline, leucine, isoleucine, norleucine, and proline, were measured by differential scanning calorimetry (d.s.c.), and molar entropies of fusion were derived. Both L- and DL-compunds were taken into account for the chiral molecules. No solid-to-solid transitions were detected from room temperature to fusion except for N-acetyl-N′-methyl alaninamide. Comparisons were made with the values for the N-acetyl amides of the corresponding amino acids previously reported. Both L enantiomers and DL racemates of α-aminobutyric acid, alanine, valine and isoleucine methylamides displayed temperatures of fusion sharply increasing as a function of molar mass, whereas much lower values, in countertendency with their molar mass increase, were found for proline and leucine methylamides. The racemic DL crystals showed temperatures of fusion of about 40 °C lower than those of the corresponding pure L enantiomers, except for proline and leucine derivatives. The enthalpies and entropies of fusion also varied as a function of molar mass following a similar trend with that of temperatures of fusion, except for alanine derivatives which showed lower values than expected. The values of ideal solubility of solids at T = 298.15 K were estimated based on their temperatures and molar entropies of fusion. Results were discussed with reference to the packing patterns based on hydrogen bonding and

  8. Reservoir simulation with the cubic plus (cross-) association equation of state for water, CO2, hydrocarbons, and tracers

    Science.gov (United States)

    Moortgat, Joachim

    2018-04-01

    This work presents an efficient reservoir simulation framework for multicomponent, multiphase, compressible flow, based on the cubic-plus-association (CPA) equation of state (EOS). CPA is an accurate EOS for mixtures that contain non-polar hydrocarbons, self-associating polar water, and cross-associating molecules like methane, ethane, unsaturated hydrocarbons, CO2, and H2S. While CPA is accurate, its mathematical formulation is highly non-linear, resulting in excessive computational costs that have made the EOS unfeasible for large scale reservoir simulations. This work presents algorithms that overcome these bottlenecks and achieve an efficiency comparable to the much simpler cubic EOS approach. The main applications that require such accurate phase behavior modeling are 1) the study of methane leakage from high-pressure production wells and its potential impact on groundwater resources, 2) modeling of geological CO2 sequestration in brine aquifers when one is interested in more than the CO2 and H2O components, e.g. methane, other light hydrocarbons, and various tracers, and 3) enhanced oil recovery by CO2 injection in reservoirs that have previously been waterflooded or contain connate water. We present numerical examples of all those scenarios, extensive validation of the CPA EOS with experimental data, and analyses of the efficiency of our proposed numerical schemes. The accuracy, efficiency, and robustness of the presented phase split computations pave the way to more widespread adoption of CPA in reservoir simulators.

  9. Electrical properties of MBE grown Si{sub 3}N{sub 4}-cubic GaN MIS structures

    Energy Technology Data Exchange (ETDEWEB)

    Zado, A.; Lischka, K.; As, D.J. [University of Paderborn, Faculty of Science, Department of Physics, Warburger Str. 100, 33098 Paderborn (Germany)

    2012-03-15

    In this work we report on the electrical characterization of non-polar cubic GaN metal-insulator-semiconductor (MIS) structures. Si{sub 3}N{sub 4} layers were deposited in-situ on top of cubic GaN grown on 3C-SiC (001) substrates. The electric characteristics of the MIS structures are measured by capacitance and admittance spectroscopy techniques. From the hysteresis in the capacitance-voltage curves and the peak height of the conductance G{sub p} -{omega} frequency curves the interface state densities are calculated. We find interface traps about 0.3 eV below the conduction band. The density of these traps is D{sub it} = 2.5x10{sup 11} cm{sup -2}eV{sup -1}. This is one order of magnitude lower than in MIS structures with a Si{sub 3}N{sub 4} insulator produced by plasma enhanced vapour deposition and two orders of magnitude lower than in MIS structures on c-GaN with SiO{sub 2} as insulator (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Barrier effect of AlN film in flexible Cu(In,Ga)Se{sub 2} solar cells on stainless steel foil and solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Li, Boyan; Li, Jianjun [Institute of Photo-electronic Thin Film Devices and Technology, Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Nankai University, Tianjin 300071 (China); Wu, Li [The MOE Key Laboratory of Weak-Light Nonlinear Photonics, School of Physics, Nankai University, Tianjin 300071 (China); Liu, Wei; Sun, Yun [Institute of Photo-electronic Thin Film Devices and Technology, Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Nankai University, Tianjin 300071 (China); Zhang, Yi, E-mail: yizhang@nankai.edu.cn [Institute of Photo-electronic Thin Film Devices and Technology, Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Nankai University, Tianjin 300071 (China)

    2015-04-05

    Highlights: • The adhension between AlN film and Mo are verygood. • AlN film can be effectively used as the barrier of flexible CIGS solar cell on SS substrate. • AlN film is suitable as the insulation barrier of flexible CIGS solar cell on SS substrate. - Abstract: The AlN film deposited by DC magnetron sputtering on stainless steel (SS) foils was used as the barrier in flexible Cu(In,Ga)Se{sub 2} (CIGS) solar cells on stainless steel foil and characterized comprehensively by X-ray diffraction (XRD), scanning electron microscopy (SEM), I–V, and QE measurements study. The study of AlN as insulation barrier in the flexible CIGS solar cell showed that the adhesion strength between the SS foil and the deposited AlN film was very strong even after annealing at high temperature at 530 °C. More importantly, a high resistance of over 10 MΩ was remained with the film with thickness of around 200 nm after annealing. This indicates that the AlN film is suitable as an effective insulation barrier in flexible CIGS solar cells based on SS foil. In addition, the XRD and SEM results showed that the AlN film did not influence the crystal structure of the Mo film which was deposited upon the AlN layer and used as the electrical contact in CIGS solar cells. It was found that the AlN film contributed to an improved crystallinity of the Mo contact layer compared to the bare SS foil. The combined results of secondary ion mass spectrometry, I–V and EQE measurements of the corresponding flexible CIGS solar cells confirmed that 1 μm-thick AlN film could be used as an efficient barrier layer in CIGS solar cells on SS foil.

  11. Microstructure and mechanical properties of stress-tailored piezoelectric AlN thin films for electro-acoustic devices

    Energy Technology Data Exchange (ETDEWEB)

    Reusch, Markus, E-mail: markus.reusch@iaf.fraunhofer.de [Laboratory for Compound Semiconductor Microsystems, IMTEK - Department of Microsystems Engineering, University of Freiburg, Georges-Koehler-Allee 103, 79110 Freiburg (Germany); Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg (Germany); Cherneva, Sabina [Institute of Mechanics, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 4, 1113 Sofia (Bulgaria); Lu, Yuan; Žukauskaitė, Agnė; Kirste, Lutz; Holc, Katarzyna [Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg (Germany); Datcheva, Maria [Institute of Mechanics, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 4, 1113 Sofia (Bulgaria); Stoychev, Dimitar [Institute of Physical Chemistry, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 11, 1113 Sofia (Bulgaria); Lebedev, Vadim [Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg (Germany); Ambacher, Oliver [Laboratory for Compound Semiconductor Microsystems, IMTEK - Department of Microsystems Engineering, University of Freiburg, Georges-Koehler-Allee 103, 79110 Freiburg (Germany); Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg (Germany)

    2017-06-15

    Highlights: • Sputtered AlN thin films with minimized intrinsic stress gradient. • Gradual increase of N{sub 2} concentration during film growth. • No degradation of AlN film properties by changing process conditions. • 2D Raman mapping of nanoindentation area. - Abstract: Nanoindentation measurements along with atomic force microscopy, X-ray diffraction, and residual stress analyses on the basis of Raman measurements have been performed to characterize stress-tailored AlN thin films grown using reactive RF magnetron sputtering. The intrinsic stress gradient caused by the growing in-plane grain size along film thickness was minimized by increasing the N{sub 2} concentration in the Ar/N{sub 2} gas mixture during the growth process. The increase of N{sub 2} concentration did not degrade the device-relevant material properties such as crystallographic orientation, surface morphology, piezoelectric response, or indentation modulus. Due to comparable crystallographic film properties for all investigated samples it was concluded that mainly the AlN crystallites contribute to the mechanical film properties such as indentation modulus and hardness, while the film stress or grain boundaries had only a minor influence. Therefore, by tailoring the stress gradient in the AlN films, device performance, fabrication yield, and the design flexibility of electro-acoustic devices can be greatly improved.

  12. Occurrence and elimination of in-plane misoriented crystals in AlN epilayers on sapphire via pre-treatment control

    International Nuclear Information System (INIS)

    Wang Hu; Xiong Hui; Wu Zhi-Hao; Yu Chen-Hui; Tian Yu; Dai Jiang-Nan; Fang Yan-Yan; Zhang Jian-Bao; Chen Chang-Qing

    2014-01-01

    AlN epilayers are grown directly on sapphire (0001) substrates each of which has a low temperature AlN nucleation layer. The effects of pretreatments of sapphire substrates, including exposures to NH 3 /H 2 and to H 2 only ambients at different temperatures, before the growth of AlN epilayers is investigated. In-plane misoriented crystals occur in N-polar AlN epilayers each with pretreatment in a H 2 only ambient, and are characterized by six 60°-apart peaks with splits in each peak in (101-bar 2) phi scan and two sets of hexagonal diffraction patterns taken along the [0001] zone axis in electron diffraction. These misoriented crystals can be eliminated in AlN epilayers by the pretreatment of sapphire substrates in the NH 3 /H 2 ambient. AlN epilayers by the pretreatment of sapphire substrates in the NH 3 /H 2 ambient are Al-polar. Our results show the pretreatments and the nucleation layers are responsible for the polarities of the AlN epilayers. We ascribe these results to the different strain relaxation mechanisms induced by the lattice mismatch of AlN and sapphire. (interdisciplinary physics and related areas of science and technology)

  13. Enhanced Piezoelectric Response of AlN via CrN Alloying

    Science.gov (United States)

    Manna, Sukriti; Talley, Kevin R.; Gorai, Prashun; Mangum, John; Zakutayev, Andriy; Brennecka, Geoff L.; Stevanović, Vladan; Ciobanu, Cristian V.

    2018-03-01

    Since AlN has emerged as an important piezoelectric material for a wide variety of applications, efforts have been made to increase its piezoelectric response via alloying with transition metals that can substitute for Al in the wurtzite lattice. We report on density functional theory calculations of structure and properties of the Crx Al1 -x N system for Cr concentrations ranging from zero to beyond the wurtzite-rocksalt transition point. By studying the different contributions to the longitudinal piezoelectric coefficient, we propose that the physical origin of the enhanced piezoelectricity in Crx Al1 -x N alloys is the increase of the internal parameter u of the wurtzite structure upon substitution of Al with the larger Cr ions. Among a set of wurtzite-structured materials, we find that Crx Al1 -x N has the most sensitive piezoelectric coefficient with respect to alloying concentration. Based on these results, we propose that Crx Al1 -x N is a viable piezoelectric material whose properties can be tuned via Cr composition. We support this proposal by combinatorial synthesis experiments, which show that Cr can be incorporated in the AlN lattice up to 30% before a detectable transition to rocksalt occurs. At this Cr content, the piezoelectric modulus d33 is approximately 4 times larger than that of pure AlN. This finding, combined with the relative ease of synthesis under nonequilibrium conditions, may position Crx Al1 -x N as a prime piezoelectric material for applications such as resonators and acoustic wave generators.

  14. Enhanced Piezoelectric Response of AlN via CrN Alloying

    Energy Technology Data Exchange (ETDEWEB)

    Manna, Sukriti; Talley, Kevin R.; Gorai, Prashun; Mangum, John; Zakutayev, Andriy; Brennecka, Geoff L.; Stevanović, Vladan; Ciobanu, Cristian V.

    2018-03-01

    Since AlN has emerged as an important piezoelectric material for a wide variety of applications, efforts have been made to increase its piezoelectric response via alloying with transition metals that can substitute for Al in the wurtzite lattice. We report on density functional theory calculations of structure and properties of the CrxAl1-xN system for Cr concentrations ranging from zero to beyond the wurtzite-rocksalt transition point. By studying the different contributions to the longitudinal piezoelectric coefficient, we propose that the physical origin of the enhanced piezoelectricity in CrxAl1-xN alloys is the increase of the internal parameter u of the wurtzite structure upon substitution of Al with the larger Cr ions. Among a set of wurtzite-structured materials, we find that CrxAl1-xN has the most sensitive piezoelectric coefficient with respect to alloying concentration. Based on these results, we propose that CrxAl1-xN is a viable piezoelectric material whose properties can be tuned via Cr composition. We support this proposal by combinatorial synthesis experiments, which show that Cr can be incorporated in the AlN lattice up to 30% before a detectable transition to rocksalt occurs. At this Cr content, the piezoelectric modulus d33 is approximately 4 times larger than that of pure AlN. This finding, combined with the relative ease of synthesis under nonequilibrium conditions, may position CrxAl1-xN as a prime piezoelectric material for applications such as resonators and acoustic wave generators.

  15. Growth and characterization of cubic AlGaN/GaN based devices

    Energy Technology Data Exchange (ETDEWEB)

    Potthast, S.

    2006-11-15

    Cubic GaN and AlGaN layers are grown by radio frequency plasma assisted molecular beam epitaxy on freestanding 3C-SiC (001) substrates. Detailed analysis of the substrate quality reveal a direct dependence of the roughness of the 3C-SiC on the dislocation density. Additionally a strong influence of the substrate quality on the quality of cubic GaN layers is found. GaN, AlGaN and AlN buffer layers grown at different temperatures are used to improve the structural properties of the c-GaN buffer. Best values are obtained for AlN buffers deposited at T{sub Subs}=720 C. Furthermore, the growth temperature of the buffer itself is varied. Optimized results are found for T{sub Subs}=720 C grown under a Ga coverage of one monolayer. On top of the GaN buffer, AlGaN films (0

  16. Local thermal conductivity of polycrystalline AlN ceramics measured by scanning thermal microscopy and complementary scanning electron microscopy techniques

    International Nuclear Information System (INIS)

    Zhang Yue-Fei; Wang Li; Wei Bin; Ji Yuan; Han Xiao-Dong; Zhang Ze; Heiderhoff, R.; Geinzer, A. K.; Balk, L. J.

    2012-01-01

    The local thermal conductivity of polycrystalline aluminum nitride (AlN) ceramics is measured and imaged by using a scanning thermal microscope (SThM) and complementary scanning electron microscope (SEM) based techniques at room temperature. The quantitative thermal conductivity for the AlN sample is gained by using a SThM with a spatial resolution of sub-micrometer scale through using the 3ω method. A thermal conductivity of 308 W/m·K within grains corresponding to that of high-purity single crystal AlN is obtained. The slight differences in thermal conduction between the adjacent grains are found to result from crystallographic misorientations, as demonstrated in the electron backscattered diffraction. A much lower thermal conductivity at the grain boundary is due to impurities and defects enriched in these sites, as indicated by energy dispersive X-ray spectroscopy. (condensed matter: structural, mechanical, and thermal properties)

  17. The influence of ALN-Al gradient material gradient index on ballistic performance

    International Nuclear Information System (INIS)

    Wang Youcong; Liu Qiwen; Li Yao; Shen Qiang

    2013-01-01

    Ballistic performance of the gradient material is superior to laminated material, and gradient materials have different gradient types. Using ls-dyna to simulate the ballistic performance of ALN-AL gradient target plates which contain three gradient index (b = 1, b = 0.5, b = 2). Through Hopkinson bar numerical simulation to the target plate materials, we obtained the reflection stress wave and transmission stress wave state of gradient material to get the best gradient index. The internal stress state of gradient material is simulated by amplification processing of the target plate model. When the gradient index b is equal to 1, the gradient target plate is best of all.

  18. Local lattice environment of indium in GaN, AlN, and InN

    International Nuclear Information System (INIS)

    Penner, J.

    2007-01-01

    After an introduction to the physical properties of the nitrides, their preparation, and the state of studies on the implantation in the nitrides the experimental method (PAC) applied in this thesis and the data analysis are presented. The next chapter describes then the applied materials and the sample preparation. The following chapters contain the PAC measurements on the annealing behaviout of GaN, AlN, and InN after the implantation as well as dose- and temperature dependent PAC studies. Finally the most important results are summarized

  19. Surface state of GaN after rapid-thermal-annealing using AlN cap-layer

    Energy Technology Data Exchange (ETDEWEB)

    El-Zammar, G., E-mail: georgio.elzammar@univ-tours.fr [Université François Rabelais, Tours, GREMAN, CNRS UMR 7347, 10 rue Thalès de Milet CS 97155, 37071 Tours Cedex 2 (France); Khalfaoui, W. [Université François Rabelais, Tours, GREMAN, CNRS UMR 7347, 10 rue Thalès de Milet CS 97155, 37071 Tours Cedex 2 (France); Oheix, T. [Université François Rabelais, Tours, GREMAN, CNRS UMR 7347, 10 rue Thalès de Milet CS 97155, 37071 Tours Cedex 2 (France); STMicroelectronics, 10 rue Thalès de Milet CS 97155, 37071 Tours Cedex 2 (France); Yvon, A.; Collard, E. [STMicroelectronics, 10 rue Thalès de Milet CS 97155, 37071 Tours Cedex 2 (France); Cayrel, F.; Alquier, D. [Université François Rabelais, Tours, GREMAN, CNRS UMR 7347, 10 rue Thalès de Milet CS 97155, 37071 Tours Cedex 2 (France)

    2015-11-15

    Graphical abstract: Surface state of a crack-free AlN cap-layer reactive sputtered on GaN and annealed at high temperature showing a smooth, pit-free surface. - Highlights: • We deposit a crystalline AlN layer by reactive magnetron sputtering on GaN. • We show the effect of deposition parameters of AlN by reactive magnetron sputtering on the quality of the grown layer. • We demonstrate the efficiency of double cap-layer for GaN protection during high temperature thermal treatments. • We show an efficient selective etch of AlN without damaging GaN surface. - Abstract: Critical issues need to be overcome to produce high performance Schottky diodes on gallium nitride (GaN). To activate dopant, high temperature thermal treatments are required but damage GaN surface where hexagonal pits appear and prevent any device processing. In this paper, we investigated the efficiency of cap-layers on GaN during thermal treatments to avoid degradation. Aluminum nitride (AlN) and silicon oxide (SiO{sub x}) were grown on GaN by direct current reactive magnetron sputtering and plasma-enhanced chemical vapor deposition, respectively. AlN growth parameters were studied to understand their effect on the grown layers and their protection efficiency. Focused ion beam was used to measure AlN layer thickness. Crystalline quality and exact composition were verified using X-ray diffraction and energy dispersive X-ray spectroscopy. Two types of rapid thermal annealing at high temperatures were investigated. Surface roughness and pits density were evaluated using atomic force microscopy and scanning electron microscopy. Cap-layers wet etching was processed in H{sub 3}PO{sub 4} at 120 °C for AlN and in HF (10%) for SiO{sub x}. This work reveals effective protection of GaN during thermal treatments at temperatures as high as 1150 °C. Low surface roughness was obtained. Furthermore, no hexagonal pit was observed on the surface.

  20. Structural characteristics of single crystalline GaN films grown on (111) diamond with AlN buffer

    DEFF Research Database (Denmark)

    Pécz, Béla; Tóth, Lajos; Barna, Árpád

    2013-01-01

    Hexagonal GaN films with the [0001] direction parallel to the surface normal were grown on (111) oriented single crystalline diamond substrates by plasma-assisted molecular beam epitaxy. Pre-treatments of the diamond surface with the nitrogen plasma beam, prior the nucleation of a thin AlN layer......, eliminated the inversion domains and reduced the density of threading dislocations in the GaN epilayers. The films have an in-plane epitaxial relationship [1010]GaN//[110]diamond. Thus GaN (0001) thin films of single epitaxial relationship and of single polarity were realised on diamond with AlN buffer....

  1. Black holes in a cubic Galileon universe

    Energy Technology Data Exchange (ETDEWEB)

    Babichev, E.; Charmousis, C.; Lehébel, A.; Moskalets, T., E-mail: eugeny.babichev@th.u-psud.fr, E-mail: christos.charmousis@th.u-psud.fr, E-mail: antoine.lehebel@th.u-psud.fr, E-mail: tetiana.moskalets@th.u-psud.fr [Laboratoire de Physique Théorique, CNRS, Univ. Paris-Sud, Université Paris-Saclay, 91405 Orsay (France)

    2016-09-01

    We find and study the properties of black hole solutions for a subclass of Horndeski theory including the cubic Galileon term. The theory under study has shift symmetry but not reflection symmetry for the scalar field. The Galileon is assumed to have linear time dependence characterized by a velocity parameter. We give analytic 3-dimensional solutions that are akin to the BTZ solutions but with a non-trivial scalar field that modifies the effective cosmological constant. We then study the 4-dimensional asymptotically flat and de Sitter solutions. The latter present three different branches according to their effective cosmological constant. For two of these branches, we find families of black hole solutions, parametrized by the velocity of the scalar field. These spherically symmetric solutions, obtained numerically, are different from GR solutions close to the black hole event horizon, while they have the same de-Sitter asymptotic behavior. The velocity parameter represents black hole primary hair.

  2. Cubic phase control of ultrashort laser pulses

    International Nuclear Information System (INIS)

    Mecseki, K.; Erdelyi, M.; Kovacs, A.P.; Szabo, G.

    2006-01-01

    Complete test of publication follows. The temporal shape of an ultrashort laser pulse may change upon propagating through a linear dispersive medium having a phase shift ψω. The change can be characterized by the Taylor-coefficients of the phase shift which are calculated around the central frequency ω 0 of the pulse. Measurements and independent control of the group delay dispersion (GDD, ψ'(ω 0 )) and the third order dispersion (TOD, ψ'(ω 0 )) are important in several research fields, particularly in the generation of ultrashort laser pulses by chirped pulse amplification (CPA) and pulse shaping for molecular control. The GDD and the TOD of an ideal pulse compressor are equal to the negative of the corresponding dispersion coefficients of the medium. However, in the case of prism-pair and grating-pair compressor is different from the ratio of the coefficients of the medium to be compensated for. Therefore it is necessary to develop so-called cubic compressors that are able to control the TOD of the pulse, yet, do not affect the GDD. In this paper a new cubic compressor setup is investigated theoretically and experimentally, which resembles the set-up proposed by White, however, we control the GDD and the TOD by the position of a birefringent, semi-cylinder crystal place around the focal point of an achromatic lens. For the evaluation of the phase shift introduced by the proposed cubic compressor, a ray tracing program was written. The program allows optimizing the compressor parameters, such as the radius of the crystal, magnification of the lens etc. Calcite was applied because it is a strong birefringent material. Calculations showed that there is a trajectory, along which shifting the crystal the TOD can be tuned independently of the GDD. The value of the TOD changed in a relatively wide range between -3.15 x 10 5 fs 3 and -1.67 x 10 5 fs 3 . Although the defocus also affects the angular dispersion of the pulse leaving the compressor, if does not exceed

  3. Cubic martensite in high carbon steel

    Science.gov (United States)

    Chen, Yulin; Xiao, Wenlong; Jiao, Kun; Ping, Dehai; Xu, Huibin; Zhao, Xinqing; Wang, Yunzhi

    2018-05-01

    A distinguished structural characteristic of martensite in Fe-C steels is its tetragonality originating from carbon atoms occupying only one set of the three available octahedral interstitial sites in the body-centered-cubic (bcc) Fe lattice. Such a body-centered-tetragonal (bct) structure is believed to be thermodynamically stable because of elastic interactions between the interstitial carbon atoms. For such phase stability, however, there has been a lack of direct experimental evidence despite extensive studies of phase transformations in steels over one century. In this Rapid Communication, we report that the martensite formed in a high carbon Fe-8Ni-1.26C (wt%) steel at room temperature induced by applied stress/strain has actually a bcc rather than a bct crystal structure. This finding not only challenges the existing theories on the stability of bcc vs bct martensite in high carbon steels, but also provides insights into the mechanism for martensitic transformation in ferrous alloys.

  4. Expansion into lattice harmonics in cubic symmetries

    Science.gov (United States)

    Kontrym-Sznajd, G.

    2018-05-01

    On the example of a few sets of sampling directions in the Brillouin zone, this work shows how important the choice of the cubic harmonics is on the quality of approximation of some quantities by a series of such harmonics. These studies led to the following questions: (1) In the case that for a given l there are several independent harmonics, can one use in the expansion only one harmonic with a given l?; (2) How should harmonics be ordered: according to l or, after writing them in terms of (x4 + y4 + z4)n (x2y2z2)m, according to their degree q = n + m? To enable practical applications of such harmonics, they are constructed in terms of the associated Legendre polynomials up to l = 26. It is shown that electron momentum densities, reconstructed from experimental data for ErGa3 and InGa3, are described much better by harmonics ordered with q.

  5. Polar and non-polar organic aerosols from large-scale agricultural-waste burning emissions in Northern India: Implications to organic mass-to-organic carbon ratio.

    Science.gov (United States)

    Rajput, Prashant; Sarin, M M

    2014-05-01

    This study focuses on characteristics of organic aerosols (polar and non-polar) and total organic mass-to-organic carbon ratio (OM/OC) from post-harvest agricultural-waste (paddy- and wheat-residue) burning emissions in Northern India. Aerosol samples from an upwind location (Patiala: 30.2°N, 76.3°E) in the Indo-Gangetic Plain were analyzed for non-polar and polar fractions of organic carbon (OC1 and OC2) and their respective mass (OM1 and OM2). On average, polar organic aerosols (OM2) contribute nearly 85% of the total organic mass (OM) from the paddy- and wheat-residue burning emissions. The water-soluble-OC (WSOC) to OC2 ratio, within the analytical uncertainty, is close to 1 from both paddy- and wheat-residue burning emissions. However, temporal variability and relatively low WSOC/OC2 ratio (Av: 0.67±0.06) is attributed to high moisture content and poor combustion efficiency during paddy-residue burning, indicating significant contribution (∼30%) of aromatic carbon to OC2. The OM/OC ratio for non-polar (OM1/OC1∼1.2) and polar organic aerosols (OM2/OC2∼2.2), hitherto unknown for open agricultural-waste burning emissions, is documented in this study. The total OM/OC ratio is nearly identical, 1.9±0.2 and 1.8±0.2, from paddy- and wheat-residue burning emissions. Copyright © 2013 Elsevier Ltd. All rights reserved.

  6. Behavioral and electroencephalographic evaluation of the anticonvulsive activity of Moringa oleifera leaf non-polar extracts and one metabolite in PTZ-induced seizures.

    Science.gov (United States)

    González-Trujano, María Eva; Martínez-González, Claudia Lizbeth; Flores-Carrillo, Maricela; Luna-Nophal, Sara Ibeth; Contreras-Murillo, Gerardo; Magdaleno-Madrigal, Víctor Manuel

    2018-01-15

    Moringa oleifera Lamarck is a species that has long been used in high demand in folk medicine, including for the treatment of epilepsy. Nevertheless, scientific studies demonstrating its anticonvulsant properties and the nature of the bioactive constituents are lacking. The aim of this study was to evaluate the anticonvulsant activities of the Moringa oleifera leaves in non-polar vs. polar extracts using behavioral and electroencephalographic (EEG) analyses in rodents. First, PTZ (80 mg/kg, i.p.)-induced tonic-clonic seizures were assayed via a dose-response (100, 200 and 300 mg/kg, i.p.) evaluation in mice. Then, a dosage of the extracts (100 or 300 mg/kg) and one metabolite (30 mg/kg, i.p.) was selected to evaluate its effect on PTZ (35 mg/kg, i.p.)-induced EEG paroxystic activities in rats compared to the effects of ethosuximide (reference anticonvulsant drug, 100 mg/kg, i.p.). Latent onset of the first paroxystic spike, first seizure and frequency as well as seizure severity, were determined using Racine's scale. Moringa oleifera ethanol and hexane extracts produced a delay in the seizure latency in mice and rats; this effect was improved in the presence of the hexane extract containing the active metabolite hexadecanoic acid. The anticonvulsant effects were corroborated in the spectral analysis by the potency of the EEG due to a reduction in the spike frequency and amplitude, as well as in the duration and severity of the seizures. The effects of the hexane extract resembled those observed in the reference antiepileptic drug ethosuximide. Moringa oleifera leaves possess anticonvulsant activities due to the complementary of the non-polar and polar constituents. However, the non-polar constituents appear to exert an important influence via the partial participation of fatty acids, providing evidence of the effects of this plant in epilepsy therapy. Copyright © 2017. Published by Elsevier GmbH.

  7. Comparison of Chlamydia trachomatis serovar L2 growth in polarized genital epithelial cells grown in three-dimensional culture with non-polarized cells

    OpenAIRE

    Dessus-Babus, Sophie; Moore, Cheryl G.; Whittimore, Judy D.; Wyrick, Priscilla B.

    2008-01-01

    A common model for studying Chlamydia trachomatis and growing chlamydial stocks uses Lymphogranuloma venereum serovar L2 and non-polarized HeLa cells. However, recent publications indicate that the growth rate and progeny yields can vary considerably for a particular strain depending on the cell line/type used, and seem to be partially related to cell tropism. In the present study, the growth of invasive serovar L2 was compared in endometrial HEC-1B and endocervical HeLa cells polarized on co...

  8. Influence of metallic surface states on electron affinity of epitaxial AlN films

    Energy Technology Data Exchange (ETDEWEB)

    Mishra, Monu; Krishna, Shibin; Aggarwal, Neha [Advanced Materials and Devices Division, CSIR-National Physical Laboratory, Dr. K.S. Krishnan Marg, New Delhi110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Gupta, Govind, E-mail: govind@nplindia.org [Advanced Materials and Devices Division, CSIR-National Physical Laboratory, Dr. K.S. Krishnan Marg, New Delhi110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India)

    2017-06-15

    The present article investigates surface metallic states induced alteration in the electron affinity of epitaxial AlN films. AlN films grown by plasma-assisted molecular beam epitaxy system with (30% and 16%) and without metallic aluminium on the surface were probed via photoemission spectroscopic measurements. An in-depth analysis exploring the influence of metallic aluminium and native oxide on the electronic structure of the films is performed. It was observed that the metallic states pinned the Fermi Level (FL) near valence band edge and lead to the reduction of electron affinity (EA). These metallic states initiated charge transfer and induced changes in surface and interface dipoles strength. Therefore, the EA of the films varied between 0.6–1.0 eV due to the variation in contribution of metallic states and native oxide. However, the surface barrier height (SBH) increased (4.2–3.5 eV) adversely due to the availability of donor-like surface states in metallic aluminium rich films.

  9. Design and Optimization of AlN based RF MEMS Switches

    Science.gov (United States)

    Hasan Ziko, Mehadi; Koel, Ants

    2018-05-01

    Radio frequency microelectromechanical system (RF MEMS) switch technology might have potential to replace the semiconductor technology in future communication systems as well as communication satellites, wireless and mobile phones. This study is to explore the possibilities of RF MEMS switch design and optimization with aluminium nitride (AlN) thin film as the piezoelectric actuation material. Achieving low actuation voltage and high contact force with optimal geometry using the principle of piezoelectric effect is the main motivation for this research. Analytical and numerical modelling of single beam type RF MEMS switch used to analyse the design parameters and optimize them for the minimum actuation voltage and high contact force. An analytical model using isotropic AlN material properties used to obtain the optimal parameters. The optimized geometry of the device length, width and thickness are 2000 µm, 500 µm and 0.6 µm respectively obtained for the single beam RF MEMS switch. Low actuation voltage and high contact force with optimal geometry are less than 2 Vand 100 µN obtained by analytical analysis. Additionally, the single beam RF MEMS switch are optimized and validated by comparing the analytical and finite element modelling (FEM) analysis.

  10. Using Mosaicity to Tune Thermal Transport in Polycrystalline AlN Thin Films

    KAUST Repository

    Singh, Shivkant

    2018-05-17

    The effect of controlling the c-axis alignment (mosaicity) to the cross-plane thermal transport in textured polycrystalline aluminum nitride (AlN) thin films is experimentally and theoretically investigated. We show that by controlling the sputtering conditions we are able to deposit AlN thin films with varying c-axis grain tilt (mosaicity) from 10° to 0°. Microstructural characterization shows that the films are nearly identical in thickness and grain size, and the difference in mosaicity alters the grain interface quality. This has a significant effect to thermal transport where a thermal conductivity of 4.22 W/mK vs. 8.09 W/mK are measured for samples with tilt angles of 10° vs. 0° respectively. The modified Callaway model was used to fit the theoretical curves to the experimental results using various phonon scattering mechanisms at the grain interface. It was found that using a non-gray model gives an overview of the phonon scattering at the grain boundaries, whereas treating the grain boundary as an array of dislocation lines with varying angle relative to the heat flow, best describes the mechanism of the thermal transport. Lastly, our results show that controlling the quality of the grain interface provides a tuning knob to control thermal transport in polycrystalline materials.

  11. Respiration and Heartbeat Measurement for Sleep Monitoring Using a Flexible AlN Piezoelectric Film Sensor

    Directory of Open Access Journals (Sweden)

    Nan BU

    2009-11-01

    Full Text Available Respiratory and heartbeat monitoring during sleep provides basic physiological information for diagnosis of sleep disorders. This paper proposes a new method for non-invasive and unconstrained measurement of respiration and heartbeat during sleep. A flexible piezoelectric film sensor made of aluminum nitride (AlN material is used for signal acquisition. The total thickness of this sensor is less than 40 μm; the thin thickness makes it imperceptible when integrated into a bed. In addition, the AlN film sensor has good sensitivity, so that pressure fluctuation due to respiration and heartbeat can be measured when a subject is lying on this sensor. The pressure fluctuation measured can be further separated into signals corresponding to respiration and heartbeat, respectively. In the proposed method, the signal separation is achieved using an algorithm based on empirical mode decomposition (EMD. From the experimental results, it was found that respiration and heartbeat signals can be successfully obtained with the proposed method.

  12. GaN growth on silane exposed AlN seed layers

    Energy Technology Data Exchange (ETDEWEB)

    Ruiz-Zepeda, F. [Posgrado en Fisica de Materiales, Centro de Investigacion Cientifica y de Educacion Superior de Ensenada, Km. 107 Carret, Tijuana-Ensenada, C.P. 22860, Ensenada, B.C. (Mexico); Contreras, O. [Centro de Ciencias de la Materia Condesada, Universidad Nacional Autonoma de Mexico, Apdo. Postal 356, C.P. 22800, Ensenada, B.C. (Mexico); Dadgar, A.; Krost, A. [Otto-von-Guericke-Universitaet Magdeburg, FNW-IEP, Universitaetsplatz 2, 39106 Magdeburg (Germany)

    2008-07-01

    The microstructure and surface morphology of GaN films grown on AlN seed layers exposed to silane flow has been studied by TEM and AFM. The epilayers were grown on silicon(111) substrates by MOCVD. The AlN seed layer surface was treated at different SiH{sub 4} exposure times prior to the growth of the GaN film. A reduction in the density of threading dislocations is observed in the GaN films and their surface roughness is minimized for an optimal SiH{sub 4} exposure time between 75-90 sec. At this optimal condition a step-flow growth mode of GaN film is predominant. The improvement of the surface and structure quality of the epilayers is observed to be related to an annihilation process of threading dislocations done by SiN{sub x} masking. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Magma transport in sheet intrusions of the Alnö carbonatite complex, central Sweden.

    Science.gov (United States)

    Andersson, Magnus; Almqvist, Bjarne S G; Burchardt, Steffi; Troll, Valentin R; Malehmir, Alireza; Snowball, Ian; Kübler, Lutz

    2016-06-10

    Magma transport through the Earth's crust occurs dominantly via sheet intrusions, such as dykes and cone-sheets, and is fundamental to crustal evolution, volcanic eruptions and geochemical element cycling. However, reliable methods to reconstruct flow direction in solidified sheet intrusions have proved elusive. Anisotropy of magnetic susceptibility (AMS) in magmatic sheets is often interpreted as primary magma flow, but magnetic fabrics can be modified by post-emplacement processes, making interpretation of AMS data ambiguous. Here we present AMS data from cone-sheets in the Alnö carbonatite complex, central Sweden. We discuss six scenarios of syn- and post-emplacement processes that can modify AMS fabrics and offer a conceptual framework for systematic interpretation of magma movements in sheet intrusions. The AMS fabrics in the Alnö cone-sheets are dominantly oblate with magnetic foliations parallel to sheet orientations. These fabrics may result from primary lateral flow or from sheet closure at the terminal stage of magma transport. As the cone-sheets are discontinuous along their strike direction, sheet closure is the most probable process to explain the observed AMS fabrics. We argue that these fabrics may be common to cone-sheets and an integrated geology, petrology and AMS approach can be used to distinguish them from primary flow fabrics.

  14. DLC and AlN thin films influence the thermal conduction of HPLED light

    Science.gov (United States)

    Hsu, Ming Seng; Hsu, Ching Yao; Huang, Jen Wei; Shyu, Feng Lin

    2015-08-01

    Thermal dissipation had an important influence in the effect and life of light emitting diodes (LED) because it enables transfer the heat away from electric device to the aluminum plate that can be used for heat removal. In the industrial processing, the quality of the thermal dissipation decides by the gumming technique between the PCB and aluminum plate. In this study, we fabricated double layer ceramic thin films of diamond like carbon (DLC) and alumina nitride (AlN) by vacuum sputtering soldered the substrate of high power light emitting diodes (HPLED) light to check the heat conduction. The ceramic dielectric coatings were characterized by several subsequent analyses, especially the measurement of real work temperature. The X-Ray photoelectron spectroscopy (XPS) patterns reveal those ceramic phases were successfully grown onto the substrate. The work temperatures show DLC and AlN films coating had limited the heat transfer by the lower thermal conductivity of these ceramic films. Obviously, it hadn't transferred heat and limited work temperature of HPLED better than DLC thin film only.

  15. Using Mosaicity to Tune Thermal Transport in Polycrystalline AlN Thin Films

    KAUST Repository

    Singh, Shivkant; Shervin, Shahab; Sun, Haiding; Yarali, Milad; Chen, Jie; Lin, Ronghui; Li, Kuang-Hui; Li, Xiaohang; Ryou, Jae-Hyun; Mavrokefalos, Anastassios

    2018-01-01

    The effect of controlling the c-axis alignment (mosaicity) to the cross-plane thermal transport in textured polycrystalline aluminum nitride (AlN) thin films is experimentally and theoretically investigated. We show that by controlling the sputtering conditions we are able to deposit AlN thin films with varying c-axis grain tilt (mosaicity) from 10° to 0°. Microstructural characterization shows that the films are nearly identical in thickness and grain size, and the difference in mosaicity alters the grain interface quality. This has a significant effect to thermal transport where a thermal conductivity of 4.22 W/mK vs. 8.09 W/mK are measured for samples with tilt angles of 10° vs. 0° respectively. The modified Callaway model was used to fit the theoretical curves to the experimental results using various phonon scattering mechanisms at the grain interface. It was found that using a non-gray model gives an overview of the phonon scattering at the grain boundaries, whereas treating the grain boundary as an array of dislocation lines with varying angle relative to the heat flow, best describes the mechanism of the thermal transport. Lastly, our results show that controlling the quality of the grain interface provides a tuning knob to control thermal transport in polycrystalline materials.

  16. Early stages of interface reactions between AlN and Ti thin films

    CERN Document Server

    Pinkas, M; Froumin, N; Pelleg, J; Dariel, M P

    2002-01-01

    The early stages of interface reactions between AlN and Ti thin films were investigated using x-ray diffractions, Auger electron spectroscopy, cross section transmission electron microscopy (XTEM), and high resolution XTEM. The AlN/Ti bilayers were deposited on a molybdenum substrate using reactive and nonreactive magnetron sputtering techniques. After deposition, the bilayers were heat treated for 1-10 h at 600 deg. C in a nitrogen atmosphere. Decomposition of the AlN layer took place at the AlN/Ti interface and its products, Al and N, reacted with Ti to produce a AlN/Al sub 3 Ti/Ti sub 2 N/Ti sub 3 Al/alpha-(Ti, Al)ss phase sequence. This phase sequence is not consistent with the Ti-Al-N phase diagram and is believed to be the outcome of the particular conditions that prevail in the thin film and correspond to a particular set of kinetic parameters. A model that explains the development of the phase sequence and predicts its evolution after prolonged heat treatments is put forward. The applicability of such...

  17. Growth dynamics of reactive-sputtering-deposited AlN films

    International Nuclear Information System (INIS)

    Auger, M.A.; Vazquez, L.; Sanchez, O.; Jergel, M.; Cuerno, R.; Castro, M.

    2005-01-01

    We have studied the surface kinetic roughening of AlN films grown on Si(100) substrates by dc reactive sputtering within the framework of the dynamic scaling theory. Films deposited under the same experimental conditions for different growth times were analyzed by atomic force microscopy and x-ray diffraction. The AlN films display a (002) preferred orientation. We have found two growth regimes with a crossover time of 36 min. In the first regime, the growth dynamics is unstable and the films present two types of textured domains, well textured and randomly oriented, respectively. In contrast, in the second regime the films are homogeneous and well textured, leading to a relative stabilization of the surface roughness characterized by a growth exponent β=0.37±0.03. In this regime a superrough scaling behavior is found with the following exponents: (i) Global exponents: roughness exponent α=1.2±0.2 and β=0.37±0.03 and coarsening exponent 1/z=0.32±0.05; (ii) local exponents: α loc =1, β loc =0.32±0.01. The differences between the growth modes are found to be related to the different main growth mechanisms dominating their growth dynamics: sticking anisotropy and shadowing, respectively

  18. Effect of AlN doping on the growth morphology of SiC

    Energy Technology Data Exchange (ETDEWEB)

    Singh, N.B.; Jones, E.; Berghmans, A.; Wagner, B.P.; Jelen, E.; McLaughlin, S.; Knuteson, D.J.; Fitelson, M.; King, M.; Kahler, D. [Northrop Grumman Corporation, ES-ATL, Linthicum, MD (United States)

    2009-09-15

    AlN doped SiC films were deposited on on-axis Si-face 4H-SiC(0001) substrates by the physical vapor transport (PVT) method. Thick film in the range of 20 {mu}m range was grown and morphology was characterized. Films were grown by physical vapor deposition (PVD) in a vertical geometry in the nitrogen atmosphere. We observed that nucleation occurred in the form of discs and growth occurred in hexagonal geometry. The X-ray studies showed (001)orientation and full width of half maxima (FWHM) was less than 0.1 indicating good crystallinity. We also observed that film deposited on the carbon crucible had long needles with anisotropic growth very similar to that of pure AlN. Some of the needles grew up to sizes of 200{mu}m in length and 40 to 50 {mu}m in width. It is clear that annealing of SiC-AlN powder or high temperature physical vapor deposition produces similar crystal structure for producing AlN-SiC solid solution. SEM studies indicated that facetted hexagons grew on the top of each other and coarsened and merged to form cm size grains on the substrate. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Atmospheric pressure chemical ionization studies of non-polar isomeric hydrocarbons using ion mobility spectrometry and mass spectrometry with different ionization techniques

    Science.gov (United States)

    Borsdorf, H.; Nazarov, E. G.; Eiceman, G. A.

    2002-01-01

    The ionization pathways were determined for sets of isomeric non-polar hydrocarbons (structural isomers, cis/trans isomers) using ion mobility spectrometry and mass spectrometry with different techniques of atmospheric pressure chemical ionization to assess the influence of structural features on ion formation. Depending on the structural features, different ions were observed using mass spectrometry. Unsaturated hydrocarbons formed mostly [M - 1]+ and [(M - 1)2H]+ ions while mainly [M - 3]+ and [(M - 3)H2O]+ ions were found for saturated cis/trans isomers using photoionization and 63Ni ionization. These ionization methods and corona discharge ionization were used for ion mobility measurements of these compounds. Different ions were detected for compounds with different structural features. 63Ni ionization and photoionization provide comparable ions for every set of isomers. The product ions formed can be clearly attributed to the structures identified. However, differences in relative abundance of product ions were found. Although corona discharge ionization permits the most sensitive detection of non-polar hydrocarbons, the spectra detected are complex and differ from those obtained with 63Ni ionization and photoionization. c. 2002 American Society for Mass Spectrometry.

  20. Comparison of Chlamydia trachomatis serovar L2 growth in polarized genital epithelial cells grown in three-dimensional culture with non-polarized cells.

    Science.gov (United States)

    Dessus-Babus, Sophie; Moore, Cheryl G; Whittimore, Judy D; Wyrick, Priscilla B

    2008-04-01

    A common model for studying Chlamydia trachomatis and growing chlamydial stocks uses Lymphogranuloma venereum serovar L2 and non-polarized HeLa cells. However, recent publications indicate that the growth rate and progeny yields can vary considerably for a particular strain depending on the cell line/type used, and seem to be partially related to cell tropism. In the present study, the growth of invasive serovar L2 was compared in endometrial HEC-1B and endocervical HeLa cells polarized on collagen-coated microcarrier beads, as well as in HeLa cells grown in tissue culture flasks. Microscopy analysis revealed no difference in chlamydial attachment/entry patterns or in inclusion development throughout the developmental cycle between cell lines. Very comparable growth curves in both cell lines were also found using real-time PCR analysis, with increases in chlamydial DNA content of 400-500-fold between 2 and 36 h post-inoculation. Similar progeny yields with comparable infectivity were recovered from HEC-1B and HeLa cell bead cultures, and no difference in chlamydial growth was found in polarized vs. non-polarized HeLa cells. In conclusion, unlike other C. trachomatis strains such as urogenital serovar E, invasive serovar L2 grows equally well in physiologically different endometrial and endocervical environments, regardless of the host cell polarization state.

  1. Exciplex fluorescence emission from simple organic intramolecular constructs in non-polar and highly polar media as model systems for DNA-assembled exciplex detectors.

    Science.gov (United States)

    Bichenkova, Elena V; Sardarian, Ali R; Wilton, Amanda N; Bonnet, Pascal; Bryce, Richard A; Douglas, Kenneth T

    2006-01-21

    Organic intramolecular exciplexes, N-(4-dimethylaminobenzyl)-N-(1-pyrenemethyl)amine (1) and N'-4-dimethylaminonaphthyl-N-(1-pyrenemethyl)amine (2), were used as model systems to reveal major factors affecting their exciplex fluorescence, and thus lay the basis for developing emissive target-assembled exciplexes for DNA-mounted systems in solution. These models with an aromatic pyrenyl hydrocarbon moiety as an electron acceptor appropriately connected to an aromatic dimethylamino electron donor component (N,N-dimethylaminophenyl or N,N-dimethylaminonaphthyl) showed strong intramolecular exciplex emission in both non-polar and highly polar solvents. The effect of dielectric constant on the maximum wavelength for exciplex emission was studied, and emission was observed for 1 and 2 over the full range of solvent from non-polar hydrocarbons up to N-methylformamide with a dielectric constant of 182. Quantum yields were determined for these intramolecular exciplexes in a range of solvents relative to that for Hoechst 33,258. Conformational analysis of 1 was performed both computationally and via qualitative 2D NMR using (1)H-NOESY experiments. The results obtained indicated the contribution of pre-folded conformation(s) to the ground state of 1 conducive to exciplex emission. This research provides the initial background for design of self-assembled, DNA-mounted exciplexes and underpins further development of exciplex-based hybridisation bioassays.

  2. Interfacial B-site atomic configuration in polar (111) and non-polar (001) SrIrO3/SrTiO3 heterostructures

    Science.gov (United States)

    Anderson, T. J.; Zhou, H.; Xie, L.; Podkaminer, J. P.; Patzner, J. J.; Ryu, S.; Pan, X. Q.; Eom, C. B.

    2017-09-01

    The precise control of interfacial atomic arrangement in ABO3 perovskite heterostructures is paramount, particularly in cases where the subsequent electronic properties of the material exhibit geometrical preferences along polar crystallographic directions that feature inevitably complex surface reconstructions. Here, we present the B-site interfacial structure in polar (111) and non-polar (001) SrIrO3/SrTiO3 interfaces. The heterostructures were examined using scanning transmission electron microscopy and synchrotron-based coherent Bragg rod analysis. Our results reveal the preference of B-site intermixing across the (111) interface due to the polarity-compensated SrTiO3 substrate surface prior to growth. By comparison, the intermixing at the non-polar (001) interface is negligible. This finding suggests that the intermixing may be necessary to mitigate epitaxy along heavily reconstructed and non-stoichiometric (111) perovskite surfaces. Furthermore, this preferential B-site configuration could allow the geometric design of the interfacial perovskite structure and chemistry to selectively engineer the correlated electronic states of the B-site d-orbital.

  3. Interfacial B-site atomic configuration in polar (111 and non-polar (001 SrIrO3/SrTiO3 heterostructures

    Directory of Open Access Journals (Sweden)

    T. J. Anderson

    2017-09-01

    Full Text Available The precise control of interfacial atomic arrangement in ABO3 perovskite heterostructures is paramount, particularly in cases where the subsequent electronic properties of the material exhibit geometrical preferences along polar crystallographic directions that feature inevitably complex surface reconstructions. Here, we present the B-site interfacial structure in polar (111 and non-polar (001 SrIrO3/SrTiO3 interfaces. The heterostructures were examined using scanning transmission electron microscopy and synchrotron-based coherent Bragg rod analysis. Our results reveal the preference of B-site intermixing across the (111 interface due to the polarity-compensated SrTiO3 substrate surface prior to growth. By comparison, the intermixing at the non-polar (001 interface is negligible. This finding suggests that the intermixing may be necessary to mitigate epitaxy along heavily reconstructed and non-stoichiometric (111 perovskite surfaces. Furthermore, this preferential B-site configuration could allow the geometric design of the interfacial perovskite structure and chemistry to selectively engineer the correlated electronic states of the B-site d-orbital.

  4. A comparative study on magnetism in Zn-doped AlN and GaN from first-principles

    International Nuclear Information System (INIS)

    Xu, Liang; Wang, Lingling; Huang, Weiqing; Xiao, Wenzhi; Xiao, Gang

    2014-01-01

    First-principles calculations have been used to comparatively investigate electronic and magnetic properties of Zn-doped AlN and GaN. A total magnetic moment of 1.0 μ B induced by Zn is found in AlN, but not in GaN. Analyses show that the origin of spontaneous polarization not only depend on the localized atomic orbitals of N and sufficient hole concentration, but also the relative intensity of the covalency of matrix. The relatively stronger covalent character of GaN with respect to AlN impedes forming local magnetic moment in GaN matrix. Our study offers a fresh sight of spontaneous spin polarization in d 0 magnetism. The much stronger ferromagnetic coupling in c-plane of AlN means that it is feasible to realize long-range ferromagnetic order via monolayer delta-doping. This can apply to other wide band-gap semiconductors in wurtzite structure.

  5. The optical properties and applications of AlN thin films prepared by a helicon sputtering system

    CERN Document Server

    Chiu, W Y; Kao, H L; Jeng, E S; Chen, J S; Jaing, C C

    2002-01-01

    AlN thin films were grown on SiO sub 2 /Si and quartz substrates using a helicon sputtering system. The dependence of film quality on growth parameters, such as total sputtering pressure, substrate temperature, and nitrogen concentration has been studied. There is a good correlation of thin film crystallinity addressed by x-ray diffraction (XRD) and spectroscopic ellipsometer. The optimized films exhibit highly oriented, with only (002) peak shown in a theta-2 theta scan XRD pattern, and extremely smooth surface with rms roughness of 2 Aa. The extinction coefficient of the film was 4x10 sup - sup 4 , which is lower than that of AlN films grown by conventional sputtering. Double-layer antireflection (DLAR) coating using AlN and Al sub 3 O sub 3 grown on quartz has been demonstrated. The transmittance of DLAR was high as 96% compared to 93% of bare substrates with the measurement error less than 0.2%. AlN films prepared by Helicon sputtering thus are potential for optical application.

  6. Crystallinity and superconductivity of as-grown MgB2 thin films with AlN buffer layers

    International Nuclear Information System (INIS)

    Tsujimoto, K.; Shimakage, H.; Wang, Z.; Kaya, N.

    2005-01-01

    The effects of aluminum nitride (AlN) buffer layers on the superconducting properties of MgB 2 thin film were investigated. The AlN buffer layers and as-grown MgB 2 thin films were deposited in situ using the multiple-target sputtering system. The best depositing condition for the AlN/MgB 2 bi-layer occurred when the AlN was deposited on c-cut sapphire substrates at 290 deg. C. The crystallinity of the AlN/MgB 2 bi-layer was studied using the XRD φ-scan and it showed that AlN and MgB 2 had the same in-plane alignment rotated at an angle of 30 deg. as compared to c-cut sapphire. The critical temperature of the MgB 2 film was 29.8 K and the resistivity was 50.0 μΩ cm at 40 K

  7. Low-temperature growth of high quality AlN films on carbon face 6H-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Myunghee [Department of General Systems Studies, The University of Tokyo, 3-8-1 Komaba, Meguro-ku, Tokyo 153-8902 (Japan); Ohta, Jitsuo; Fujioka, Hiroshi [Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Tokyo 153-8505 (Japan); Kanagawa Academy of Science and Technology (KAST), 3-2-1 Sakado, Kawasaki 213-0012 (Japan); Kobayashi, Atsushi [Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Tokyo 153-8505 (Japan); Oshima, Masaharu [Department of General Systems Studies, The University of Tokyo, 3-8-1 Komaba, Meguro-ku, Tokyo 153-8902 (Japan); Department of Applied Chemistry, The University of Tokyo, 4-3-1 Hongo, Tokyo 113-8656 (Japan); Core Research for Evolutional Science and Technology (CREST), Japan Science and Technology Agency (JST), Chiyoda-ku, Tokyo 102-0075 (Japan)

    2008-01-15

    AlN films have been grown on atomically flat carbon face 6H-SiC (000 anti 1) substrates by pulsed laser deposition and their structural properties have been investigated. In-situ reflection high-energy electron diffraction observations have revealed that growth of AlN at 710 C proceeds in a Stranski-Krastanov mode, while typical layer-by-layer growth occurs at room temperature (RT) with atomically flat surfaces. It has been revealed that the crystalline quality of the AlN film is dramatically improved by the reduction in growth temperature down to RT and the full width at half maximum values in the X-ray rocking curves for 0004 and 10 anti 12 diffractions of the RT-grown AlN film are 0.05 and 0.07 , respectively. X-ray reciprocal space mapping has revealed that the introduction of misfit dislocations is suppressed in the case of RT growth, which is probably responsible for the improvement in crystalline quality. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Fabrication and structural properties of AlN submicron periodic lateral polar structures and waveguides for UV-C applications

    Energy Technology Data Exchange (ETDEWEB)

    Alden, D. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin (Germany); Guo, W.; Kaess, F.; Bryan, I.; Reddy, P.; Hernandez-Balderrama, Luis H.; Franke, A.; Collazo, R.; Sitar, Z. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Kirste, R.; Mita, S. [Adroit Materials, Inc., 2054 Kildaire Farm Rd., Suite 205, Cary, North Carolina 27518 (United States); Troha, T.; Zgonik, M. [Faculty of Mathematics and Physics, University of Ljubljana, Jadranska 19, 1000 Ljubljana (Slovenia); Bagal, A.; Chang, C.-H. [Department of Mechanical and Aerospace Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Hoffmann, A. [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin (Germany)

    2016-06-27

    Periodically poled AlN thin films with submicron domain widths were fabricated for nonlinear applications in the UV-VIS region. A procedure utilizing metalorganic chemical vapor deposition growth of AlN in combination with laser interference lithography was developed for making a nanoscale lateral polarity structure (LPS) with domain size down to 600 nm. The Al-polar and N-polar domains were identified by wet etching the periodic LPS in a potassium hydroxide solution and subsequent scanning electron microscopy (SEM) characterization. Fully coalesced and well-defined vertical interfaces between the adjacent domains were established by cross-sectional SEM. AlN LPSs were mechanically polished and surface roughness with a root mean square value of ∼10 nm over a 90 μm × 90 μm area was achieved. 3.8 μm wide and 650 nm thick AlN LPS waveguides were fabricated. The achieved domain sizes, surface roughness, and waveguides are suitable for second harmonic generation in the UVC spectrum.

  9. AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique.

    Science.gov (United States)

    Liu, Xiao-Yong; Zhao, Sheng-Xun; Zhang, Lin-Qing; Huang, Hong-Fan; Shi, Jin-Shan; Zhang, Chun-Min; Lu, Hong-Liang; Wang, Peng-Fei; Zhang, David Wei

    2015-01-01

    Recently, AlN plasma-enhanced atomic layer deposition (ALD) passivation technique had been proposed and investigated for suppressing the dynamic on-resistance degradation behavior of high-electron-mobility transistors (HEMTs). In this paper, a novel gate dielectric and passivation technique for GaN-on-Si AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) is presented. This technique features the AlN thin film grown by thermal ALD at 400°C without plasma enhancement. A 10.6-nm AlN thin film was grown upon the surface of the HEMT serving as the gate dielectric under the gate electrode and as the passivation layer in the access region at the same time. The MISHEMTs with thermal ALD AlN exhibit enhanced on/off ratio, reduced channel sheet resistance, reduction of gate leakage by three orders of magnitude at a bias of 4 V, reduced threshold voltage hysteresis of 60 mV, and suppressed current collapse degradation.

  10. Superconducting NbN single-photon detectors on GaAs with an AlN buffer layer

    Energy Technology Data Exchange (ETDEWEB)

    Schmidt, Ekkehart; Merker, Michael; Ilin, Konstantin; Siegel, Michael [Institut fuer Mikro- und Nanoelektronische Systeme (IMS), Karlsruher Institut fuer Technologie, Hertzstrasse 16, 76187 Karlsruhe (Germany)

    2015-07-01

    GaAs is the material of choice for photonic integrated circuits. It allows the monolithic integration of single-photon sources like quantum dots, waveguide based optical circuits and detectors like superconducting nanowire single-photon detectors (SNSPDs) onto one chip. The growth of high quality NbN films on GaAs is challenging, due to natural occurring surface oxides and the large lattice mismatch of about 27%. In this work, we try to overcome these problems by the introduction of a 10 nm AlN buffer layer. Due to the buffer layer, the critical temperature of 6 nm thick NbN films was increased by about 1.5 K. Furthermore, the critical current density at 4.2 K of NbN flim deposited onto GaAs with AlN buffer is 50% higher than of NbN film deposited directly onto GaAs substrate. We successfully fabricated NbN SNSPDs on GaAs with a AlN buffer layer. SNSPDs were patterned using electron-beam lithography and reactive-ion etching techniques. Results on the study of detection efficiency and jitter of a NbN SNSPD on GaAs, with and without AlN buffer layer will be presented and discussed.

  11. Mesostructured germanium with cubic pore symmetry

    Energy Technology Data Exchange (ETDEWEB)

    Armatas, G S; Kanatzidis, M G [Michigan State Univ., Michigan (United States), Dept. of Chemistry

    2006-11-15

    Regular mesoporous oxide materials have been widely studied and have a range of potential applications, such as catalysis, absorption and separation. They are not generally considered for their optical and electronic properties. Elemental semiconductors with nanopores running through them represent a different form of framework material with physical characteristics contrasting with those of the more conventional bulk, thin film and nanocrystalline forms. Here we describe cubic meso structured germanium, MSU-Ge-l, with gyroidal channels containing surfactant molecules, separated by amorphous walls that lie on the gyroid (G) minimal surface as in the mesoporous silica MCM-48. Although Ge is a high-meltin covalent semiconductor that is difficult to prepare from solution polymerization, we succeeded in assembling a continuous Ge network using a suitable precursor for Ge{sup 4-} atoms. Our results indicate that elemental semiconductors from group 14 of the periodic table can be made to adopt meso structured forms such as MSU-Ge-1, which features two three-dimensional labyrinthine tunnels obeying la3d space group symmetry and separated by a continuous germanium minimal surface that is otherwise amorphous. A consequence of this new structure for germanium, which has walls only one nanometre thick, is a wider electronic energy bandgap (1.4 eV versus 0.66 eV) than has crystalline or amorphous Ge. Controlled oxidation of MSU-Ge-1 creates a range of germanium suboxides with continuously varying Ge:O ratio and a smoothly increasing energy gap. (author)

  12. Topological Oxide Insulator in Cubic Perovskite Structure

    Science.gov (United States)

    Jin, Hosub; Rhim, Sonny H.; Im, Jino; Freeman, Arthur J.

    2013-01-01

    The emergence of topologically protected conducting states with the chiral spin texture is the most prominent feature at the surface of topological insulators. On the application side, large band gap and high resistivity to distinguish surface from bulk degrees of freedom should be guaranteed for the full usage of the surface states. Here, we suggest that the oxide cubic perovskite YBiO3, more than just an oxide, defines itself as a new three-dimensional topological insulator exhibiting both a large bulk band gap and a high resistivity. Based on first-principles calculations varying the spin-orbit coupling strength, the non-trivial band topology of YBiO3 is investigated, where the spin-orbit coupling of the Bi 6p orbital plays a crucial role. Taking the exquisite synthesis techniques in oxide electronics into account, YBiO3 can also be used to provide various interface configurations hosting exotic topological phenomena combined with other quantum phases. PMID:23575973

  13. Bifurcation of limit cycles for cubic reversible systems

    Directory of Open Access Journals (Sweden)

    Yi Shao

    2014-04-01

    Full Text Available This article is concerned with the bifurcation of limit cycles of a class of cubic reversible system having a center at the origin. We prove that this system has at least four limit cycles produced by the period annulus around the center under cubic perturbations

  14. Kinks in systems with cubic and quartic anharmonicity

    International Nuclear Information System (INIS)

    Kashcheev, V.N.

    1988-01-01

    For a classical system of interacting particles with on-site cubic or quartic anharmonicity explicit analytic solutions of the d'Alembert equation are obtained in the form of kinks in the presence of dissipation (viscous or Rayleigh) and a constant force. These kinks will be asymptotically stable in the case of quartic anharmonicity and unstable in the case cubic anharmonicity

  15. Synthesis of AlN fine particles by surface corona discharge-CVD; Enmen corona hoden CVD ni yoru AlN biryushi no gosei

    Energy Technology Data Exchange (ETDEWEB)

    Oyama, Y.; Chiba, S. [Hokkaido National Industrial Research Institute, Sapporo (Japan); Harima, K> ; Kondo, K.; Shinohara, K. [Hokkaido University, Sapporo (Japan)

    1994-09-15

    With an objective to improve insulating and heat dissipating substrates substituting for the conventional alumina substrates, discussions been given on synthesis of AlN fine particles by means of gaseous phase reaction between AlCl3 and NH3 using surface corona discharge as a reaction exciting source. AIN particles should be highly pure to acquire high-heat conductivity, and fine and uniform particles to obtain dense sinters at low temperatures. The particles obtained by using the present method were amorphous particles having nearly spherical form and smooth surface. The particle diameter depends on the initial concentration of AlCl3, and is proportional to 0.4 square of the concentration. Within the range in the present experiment, the diameters ranged from 208 nm to 431 nm. The particle diameter increased in proportion to 0.2 square of an average gas stagnating time within the plasma generating region. The particle size distribution consisted of highly uniform fine particles having the standard deviation at about the same degree as that in the conventional thermal CVD process. The alumina-based oxygen was removed completely by reduction due to graphite powder, but the re-oxidation during removal of the remaining graphite using combustion had oxygen remained at 7.4% by weight. 16 refs., 7 figs.

  16. Influence of SrF_2-doping in AlN ceramics on scintillation and dosimeter properties

    International Nuclear Information System (INIS)

    Kojima, Kaori; Okada, Go; Fukuda, Kentaro; Yanagida, Takayuki

    2016-01-01

    In this study, we synthesized undoped AlN and SrF_2-doped AlN (AlN-SrF_2) ceramics by Spark Plasma Sintering (SPS), and we characterized their optical, scintillation and dosimeter properties. The prepared undoped AlN ceramic had gray color and visually non-transparent whereas, with an addition of SrF_2, the transparency improved and became translucent. The measured in-line transmittance was approximately 0.2% at wavelengths longer than 500 nm. While the addition of SrF_2 decreased the scintillation intensity, the decay time was significantly fastened, which is a great advantage for fast photon counting-based measurements. Both the thermally-stimulated luminescence (TSL) and optically-stimulated luminescence (OSL) showed good linear response from the milli-gray range to over 10 Gy. The sensitivity seems to decrease by an addition of SrF_2 as it suppresses structural defect centers which are responsible for dosimeter properties. However, the main TSL glow peak position shifts to higher temperature with the addition of SrF_2, which indicates that inclusion of SrF_2 improves the TSL signal stability. - Highlights: • We synthesized undoped and SrF_2-doped AlN ceramics by Spark Plasma Sintering. • We evaluated scintillator and dosimeter properties of undoped and SrF_2-doped AlN. • By doping with SrF_2, the decay time is shortened. • By doping with SrF_2, the stability of TSL and OSL is improved.

  17. Study of the 27Al(n,2,)26Al reaction via accelerator mass spectrometry

    International Nuclear Information System (INIS)

    Wallner, A.

    2000-06-01

    The excitation function for the 27 Al(n,2n) 26 Al reaction is expected to show a strongly non-linear behavior in the neutron-energy region around 14 MeV, the neutron energy in D-T plasmas; thus the production rate of 26 Al (t 1/2 =7.2*10 5 a) in D-T fusion environments can in principle be used to measure the temperature of such plasmas. Existing measurements, however, are strongly discordant. Therefore, a new accurate measurement of the 27 Al(n,2n) 26 Al cross sections in the near threshold region (E n =13.5-14.8 MeV) was performed with the goal to achieve relative cross sections with the highest accuracy possible. In addition, the measurements were also designed to provide good absolute cross-section values, as absolute cross sections are important for radioactive waste predictions. Samples of Al metal were irradiated with neutrons in the energy range near threshold (E th =13.55 MeV) at the Radiuminstitutes of both Vienna and St. Petersburg, and in Tokai-mura, Japan. In Tuebingen irradiations with neutrons of higher energies (17 and 19 MeV) were performed. The amount of 26 Al produced during the irradiations was measured via accelerator mass spectrometry (AMS) at the Vienna Environmental Research Accelerator (VERA). This work represents the first 26 Al measurements for this new facility. With this system, a background as low as 3*10 -15 for 26 Al/ 27 Al isotope ratios was obtained, corresponding to a (n,2n) cross section of 0.04 mb. Utilizing AMS, cross sections with much higher precision and considerably closer to the threshold than in previous investigations could be measured. The prerequisite for its application as a temperature monitor, namely a very well known shape of the excitation function was met. A quantitative prediction of the sensitivity of this method for monitoring the temperature in a D-T fusion plasma was therefore possible. For thermal plasmas temperature changes in the order of 5 to 15 % should be detectable. An even higher sensitivity was found

  18. Optical characterisation of cubic silicon carbide

    International Nuclear Information System (INIS)

    Jackson, S.M.

    1998-09-01

    The varied properties of Silicon Carbide (SiC) are helping to launch the material into many new applications, particularly in the field of novel semiconductor devices. In this work, the cubic form of SiC is of interest as a basis for developing integrated optical components. Here, the formation of a suitable SiO 2 buried cladding layer has been achieved by high dose oxygen ion implantation. This layer is necessary for the optical confinement of propagating light, and hence optical waveguide fabrication. Results have shown that optical propagation losses of the order of 20 dB/cm are obtainable. Much of this loss can be attributed to mode leakage and volume scattering. Mode leakage is a function of the effective oxide thickness, and volume scattering related to the surface layer damage. These parameters have been shown to be controllable and so suggests that further reduction in the waveguide loss is feasible. Analysis of the layer growth mechanism by RBS, XTEM and XPS proves that SiO 2 is formed, and that the extent, of formation depends on implant dose and temperature. The excess carbon generated is believed to exit the oxide layer by a number of varying mechanisms. The result of this appears to be a number of stable Si-C-O intermediaries that, form regions to either depth extreme of the SiO 2 layer. Early furnace tests suggest a need to anneal at, temperatures approaching the melting point of the silicon substrate, and that the quality of the virgin material is crucial in controlling the resulting oxide growth. (author)

  19. Neutron Dose Measurement Using a Cubic Moderator

    International Nuclear Information System (INIS)

    Sheinfeld, M.; Mazor, T.; Cohen, Y.; Kadmon, Y.; Orion, I.

    2014-01-01

    The Bonner Sphere Spectrometer (BSS), introduced In July 1960 by a research group from Rice University, Texas, is a major approach to neutron spectrum estimation. The BSS, also known as multi-sphere spectrometer, consists of a set of a different diameters polyethylene spheres, carrying a small LiI(Eu) scintillator in their center. What makes this spectrometry method such widely used, is its almost isotropic response, covering an extraordinary wide range of energies, from thermal up to even hundreds of MeVs. One of the most interesting and useful consequences of the above study is the 12'' sphere characteristics, as it turned out that the response curve of its energy dependence, have a similar shape compared with the neutron's dose equivalent as a function of energy. This inexplicable and happy circumstance makes it virtually the only monitoring device capable providing realistic neutron dose estimates over such a wide energy range. However, since the detection mechanism is not strictly related to radiation dose, one can expect substantial errors when applied to widely different source conditions. Although the original design of the BSS included a small 4mmx4mmO 6LiI(Eu) scintillator, other thermal neutron detectors has been used over the years: track detectors, activation foils, BF3 filled proportional counters, etc. In this study we chose a Boron loaded scintillator, EJ-254, as the thermal neutron detector. The neutron capture reaction on the boron has a Q value of 2.78 MeV of which 2.34 MeV is shared by the alpha and lithium particles. The high manufacturing costs, the encasement issue, the installation efficiency and the fabrication complexity, led us to the idea of replacing the sphere with a cubic moderator. This article describes the considerations, as well as the Monte-Carlo simulations done in order to examine the applicability of this idea

  20. Ion implantation of Cd and Ag into AlN and GaN

    CERN Document Server

    Miranda, Sérgio M C; Correia, João Guilherme; Vianden, Reiner; Johnston, Karl; Alves, Eduardo; Lorenz, Katharina

    2012-01-01

    GaN and AlN thin films were implanted with cadmium (Cd) or silver (Ag), to fluences ranging from 1×1013 to 1.7 × 1015 at/cm$^{2}$. The implanted samples were annealed at 950 ºC under flowing nitrogen. While implantation damage could be fully removed for the lowest fluences, for higher fluences the crystal quality was only partially recovered. For the high fluence samples the lattice site location of the ions was studied by Rutherford Backscattering/ channelling (RBS/C). Cd ions are found to be incorporated in substitutional cation sites (Al or Ga) while Ag is slightly displaced from this position. To further investigate the incorporation sites, Perturbed Angular Correlation (PAC) measurements were performed and the electric field gradients at the site of the probe nuclei were determined.

  1. Emission spectra from AlN and GaN doped with rare earth elements

    International Nuclear Information System (INIS)

    Choi, Sung Woo; Emura, Shuichi; Kimura, Shigeya; Kim, Moo Seong; Zhou Yikai; Teraguchi, Nobuaki; Suzuki, Akira; Yanase, Akira; Asahi, Hajime

    2006-01-01

    Luminescent properties of GaN and AlN based semiconductors containing rare earth metals of Gd and Dy are studied. Cathodoluminescent spectra from AlGdN show a clear and sharp peak at 318 nm following LO phonon satellites. Photoluminescence spectra from GaDyN by the above-gap excitation also show several peaks in addition to the broad luminescence band emission. For GaGdN, the sharp PL peaks are also observed at 650 and 670 nm, and they are assigned to the intra-f orbital transitions by their time decay measurements. The broad band at around 365 nm for AlGdN, 505 nm for GaGdN and GaDyN are commonly observed. The origin of these broad bands is discussed

  2. Nonradiative recombination in GaN quantum dots formed in the AlN matrix

    International Nuclear Information System (INIS)

    Aleksandrov, I. A.; Zhuravlev, K. S.; Mansurov, V. G.

    2009-01-01

    The mechanisms of temperature quenching of steady-state photoluminescence are studied for structures with hexagonal GaN quantum dots embedded in the AlN matrix. The structures are grown by molecular beam epitaxy. The study is conducted for structures with differently sized quantum dots, for which the peak of the photoluminescence band is in the range from 2.5 to 4.0 eV. It is found that the activation energy of thermal quenching of photoluminescence varies from 27 to 110 meV, as the quantum-dot height is decreased from 5 to 2 nm. A model is suggested to interpret the results. According to the model, the photo-luminescence signal is quenched because of the transfer of charge carriers from energy levels in the quantum dots to defect levels in the matrix.

  3. Drop and recovery of thermal conductivity of AlN upon UV irradiation

    International Nuclear Information System (INIS)

    AlShaikhi, A; Srivastava, G P

    2007-01-01

    We have performed calculations of the room-temperature thermal conductivity of oxygen contaminated aluminium nitride (AlN) by employing the Callaway model with a detailed account of three-phonon scattering processes. The role of Al vacancy and O substitution of N has been examined in the form of extended defects (clusters) and point defects. Our work provides support for the theoretical model proposed by Harris et al. [Phys. Rev. B. 47, 5428 (1993)] to explain the experimentally observed drop in the conductivity upon UV irradiation and its recovery upon UV removal and subsequent illumination of the sample with visible light at room temperature. With the reported oxygen concentration in the sample, the scattering of phonons from oxygen-related extended defects is found to be ineffective. Within the picture presented by Harris et al., the point impurity scattering parameter increases by around 17% upon UV irradiation of the sample at room temperature

  4. Electronic and atomic structure of the AlnHn+2 clusters

    DEFF Research Database (Denmark)

    Martinez, Jose Ignacio; Alonso, J.A.

    2008-01-01

    The electronic and atomic structure of the family of hydrogenated Al clusters AlnHn+2 with n=4-11 has been studied using the density functional theory with the generalized gradient approximation (GGA) for exchange and correlation. All these clusters have substantial gaps between the highest...... a polyhedron of n vertices and n H atoms form strong H-Al terminal bonds; one pair of electrons is involved in each of those bonds. The remaining n+1 electron pairs form a delocalized cloud over the surface of the Al cage. The clusters fulfilling the Wade-Mingos rule have wider HOMO-LUMO gaps...... and are chemically more stable. The trends in the gap have some reflections in the form of the photoabsorption spectra, calculated in the framework of time-dependent density functional theory using the GGA single-particle energies and orbitals and a local density approximation exchange-correlation kernel....

  5. Polycrystalline AlN films with preferential orientation by plasma enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Sanchez, G.; Wu, A.; Tristant, P.; Tixier, C.; Soulestin, B.; Desmaison, J.; Bologna Alles, A.

    2008-01-01

    AlN thin films for acoustic wave devices were prepared by Microwave Plasma Enhanced Chemical Vapor Deposition under different process conditions, employing Si (100) and Pt (111)/SiO 2 /Si (100) substrates. The films were characterized by X-ray diffraction, Fourier transform infrared transmission spectroscopy, atomic force microscopy, scanning electron microscopy, and transmission electron microscopy. The values of the distance between the plasma and the tri-methyl-aluminum precursor injector, the radiofrequency bias potential, and the substrate temperature were central in the development of polycrystalline films. The choice of the chamber total pressure during deposition allowed for the development of two different crystallographic orientations, i.e., or . The film microstructures exhibited in general a column-like growth with rounded tops, an average grain size of about 40 nm, and a surface roughness lower than 20 nm under the best conditions

  6. Anomalous band-gap bowing of AlN1−xPx alloy

    International Nuclear Information System (INIS)

    Winiarski, M.J.; Polak, M.; Scharoch, P.

    2013-01-01

    Highlights: •Structural and electronic properties of AlN 1−x P x from first principles. •The supercell and the virtual crystall approximation methods applied and compared. •Anomalously high band-gap bowing found. •Similarities of band-gap behavior to that in BN 1−x P x noticed. •Performance of MBJLDA with the pseudopotential approach discussed. -- Abstract: Electronic structure of zinc blende AlN 1−x P x alloy has been calculated from first principles. Structural optimization has been performed within the framework of LDA and the band-gaps calculated with the modified Becke–Jonson (MBJLDA) method. Two approaches have been examined: the virtual crystal approximation (VCA) and the supercell-based calculations (SC). The composition dependence of the lattice parameter obtained from the SC obeys Vegard’s law whereas the volume optimization in the VCA leads to an anomalous bowing of the lattice constant. A strong correlation between the band-gaps and the structural parameter in the VCA method has been observed. On the other hand, in the SC method the supercell size and atoms arrangement (clustered vs. uniform) appear to have a great influence on the computed band-gaps. In particular, an anomalously big band-gap bowing has been found in the case of a clustered configuration with relaxed geometry. Based on the performed tests and obtained results some general features of MBJLDA are discussed and its performance for similar systems predicted

  7. Shape Preserving Interpolation Using C2 Rational Cubic Spline

    Directory of Open Access Journals (Sweden)

    Samsul Ariffin Abdul Karim

    2016-01-01

    Full Text Available This paper discusses the construction of new C2 rational cubic spline interpolant with cubic numerator and quadratic denominator. The idea has been extended to shape preserving interpolation for positive data using the constructed rational cubic spline interpolation. The rational cubic spline has three parameters αi, βi, and γi. The sufficient conditions for the positivity are derived on one parameter γi while the other two parameters αi and βi are free parameters that can be used to change the final shape of the resulting interpolating curves. This will enable the user to produce many varieties of the positive interpolating curves. Cubic spline interpolation with C2 continuity is not able to preserve the shape of the positive data. Notably our scheme is easy to use and does not require knots insertion and C2 continuity can be achieved by solving tridiagonal systems of linear equations for the unknown first derivatives di, i=1,…,n-1. Comparisons with existing schemes also have been done in detail. From all presented numerical results the new C2 rational cubic spline gives very smooth interpolating curves compared to some established rational cubic schemes. An error analysis when the function to be interpolated is ft∈C3t0,tn is also investigated in detail.

  8. Study of the motion of electrons in non polar classical liquids. Measurement of Hall effect and f.i.r. search for low energy traps. Progress report

    International Nuclear Information System (INIS)

    1981-01-01

    Progress is reported on experiments aimed at the measurement of the Hall mobility of injected electrons in classical non polar insulating liquids and the optical absorption associated with electrons captured by shallow traps in the liquefied rare gases. Theoretical work aimed at a better understanding of the trapping kinetics of electrons by SF 6 and O 2 dissolved in rare gas liquids was also carried out. Its conclusion is that the electric field dependence of the trapping probability can be explained, basically without adjustable parameters, by considering the Poole-Frenkel-Schotky ionization of the excited state of the traps. From the analysis of published data on the motion of electrons in liquid ethane it is tentatively concluded that at low temperatures the trapping of electrons in the liquid involves a Jahn-Teller like distortion of a single ethane molecule while at higher temperatures it is necessary to consider a small molecular cluster, possibly made up of 2 molecules

  9. Design of a 50/50 splitting ratio non-polarizing beam splitter based on the modal method with fused-silica transmission gratings

    Science.gov (United States)

    Zhao, Huajun; Yuan, Dairong; Ming, Hai

    2011-04-01

    The optical design of a beam splitter that has a 50/50 splitting ratio regardless of the polarization is presented. The non-polarizing beam splitter (NPBS) is based on the fused-silica rectangular transmission gratings with high intensity tolerance. The modal method has been used to estimate the effective index of the modes excited in the grating region for TE and TM polarizations. If a phase difference equals an odd multiples of π/2 for the first two modes (i.e. modes 0 and 1), the incident light will be diffracted into the 0 and -1 orders with about 50% and 50% diffraction efficiency for TM and TE polarizations, respectively.

  10. Polarization-independent rapidly tunable optical add-drop multiplexer utilizing non-polarizing beam splitters in Ti:LiNbO3

    Science.gov (United States)

    Shin, Yong-Wook; Sung, Won Ju; Eknoyan, O.; Madsen, C. K.; Taylor, H. F.

    2012-04-01

    A polarization-independent four-port wavelength-tunable optical add drop multiplexer (OADM) that utilizes non-polarizing relaxed beam splitters has been analyzed and demonstrated in Ti:LiNbO3 at the 1530 nm wavelength regime. The design utilizes an asymmetric interferometer configuration with strain induced index grating for polarization coupling along its arms that are shifted in position relative to each other. Experimental results of the filter response agree with theoretical predictions. Electrooptic tuning over a range of 15.7 nm at a rate of 0.08 nm/V has been measured. A temporal response < 46 ns to a 20 V step change in tuning voltage has been demonstrated. Fiber-to-fiber insertion loss is ~ 6.5 dB.

  11. An absorbing microwave micro-solid-phase extraction device used in non-polar solvent microwave-assisted extraction for the determination of organophosphorus pesticides

    International Nuclear Information System (INIS)

    Wang Ziming; Zhao Xin; Xu Xu; Wu Lijie; Su Rui; Zhao Yajing; Jiang Chengfei; Zhang Hanqi; Ma Qiang; Lu Chunmei; Dong Deming

    2013-01-01

    Highlights: ► An absorbing microwave μ-SPE device packed with activated carbon was used. ► Absorbing microwave μ-SPE device was made and used to enrich the analytes. ► Absorbing microwave μ-SPE device was made and used to heat samples directly. ► MAE-μ-SPE was applied to the extraction of OPPs with non-polar solvent only. - Abstract: A single-step extraction-cleanup method, including microwave-assisted extraction (MAE) and micro-solid-phase extraction (μ-SPE), was developed for the extraction of ten organophosphorus pesticides in vegetable and fruit samples. Without adding any polar solvent, only one kind of non-polar solvent (hexane) was used as extraction solvent in the whole extraction step. Absorbing microwave μ-SPE device, was prepared by packing activated carbon with microporous polypropylene membrane envelope, and used as not only the sorbent in μ-SPE, but also the microwave absorption medium. Some experimental parameters effecting on extraction efficiency was investigated and optimized. 1.0 g of sample, 8 mL of hexane and three absorbing microwave μ-SPE devices were added in the microwave extraction vessel, the extraction was carried out under 400 W irradiation power at 60 °C for 10 min. The extracts obtained by MAE-μ-SPE were directly analyzed by GC–MS without any clean-up process. The recoveries were in the range of 93.5–104.6%, and the relative standard deviations were lower than 8.7%.

  12. Transfection efficiency and uptake process of polyplexes in human lung endothelial cells: a comparative study in non-polarized and polarized cells.

    Science.gov (United States)

    Mennesson, Eric; Erbacher, Patrick; Piller, Véronique; Kieda, Claudine; Midoux, Patrick; Pichon, Chantal

    2005-06-01

    Following systemic administration, polyplexes must cross the endothelium barrier to deliver genes to the target cells underneath. To design an efficient gene delivery system into lung epithelium, we evaluated capture and transfection efficiencies of DNA complexed with either Jet-PEI (PEI-polyplexes) or histidylated polylysine (His-polyplexes) in human lung microvascular endothelial cells (HLMEC) and tracheal epithelial cells. After optimizing growth conditions to obtain a tight HLMEC monolayer, we characterized uptake of polyplexes by flow cytometry and evaluated their transfection efficiency. Polyplexes were formulated as small particles. YOYO-labelled plasmid fluorescence intensity and luciferase activity were used as readouts for uptake and gene expression, respectively. PEI-polyplexes were more efficiently taken up than His-polyplexes by both non-polarized (2-fold) and polarized HLMEC (10-fold). They were mainly internalized by a clathrin-dependent pathway whatever the cell state. In non-polarized cells, His-polyplexes entered also mainly via a clathrin-dependent pathway but with an involvement of cholesterol. The cell polarization decreased this way and a clathrin-independent pathway became predominant. PEI-polyplexes transfected more efficiently HLMEC than His-polyplexes (10(7) vs. 10(5) relative light units (RLU)/mg of proteins) with a more pronounced difference in polarized cells. In contrast, no negative effect of the cell polarization was observed with tracheal epithelial cells in which both polyplexes had comparable efficiency. We show that the efficiency of polyplex uptake by HLMEC and their internalization mechanism are polymer-dependent. By contrast with His-polyplexes, the HLMEC polarization has little influence on the uptake process and on the transfection efficiency of PEI-polyplexes. Copyright (c) 2005 John Wiley & Sons, Ltd.

  13. An absorbing microwave micro-solid-phase extraction device used in non-polar solvent microwave-assisted extraction for the determination of organophosphorus pesticides

    Energy Technology Data Exchange (ETDEWEB)

    Wang Ziming, E-mail: wangziming@jlu.edu.cn [College of Chemistry, Jilin University, 2699 Qianjin Street, Changchun 130012 (China); College of Environment and Resources, Jilin University, 2699 Qianjin Street, Changchun 130012 (China); Zhao Xin; Xu Xu; Wu Lijie; Su Rui; Zhao Yajing; Jiang Chengfei; Zhang Hanqi [College of Chemistry, Jilin University, 2699 Qianjin Street, Changchun 130012 (China); Ma Qiang [Chinese Academy of Inspection and Quarantine, Beijing 100123 (China); Lu Chunmei [College of Technology Center, Jilin Entry-Exit Inspection and Quarantine Bureau, Changchun 130062 (China); Dong Deming [College of Environment and Resources, Jilin University, 2699 Qianjin Street, Changchun 130012 (China)

    2013-01-14

    Highlights: Black-Right-Pointing-Pointer An absorbing microwave {mu}-SPE device packed with activated carbon was used. Black-Right-Pointing-Pointer Absorbing microwave {mu}-SPE device was made and used to enrich the analytes. Black-Right-Pointing-Pointer Absorbing microwave {mu}-SPE device was made and used to heat samples directly. Black-Right-Pointing-Pointer MAE-{mu}-SPE was applied to the extraction of OPPs with non-polar solvent only. - Abstract: A single-step extraction-cleanup method, including microwave-assisted extraction (MAE) and micro-solid-phase extraction ({mu}-SPE), was developed for the extraction of ten organophosphorus pesticides in vegetable and fruit samples. Without adding any polar solvent, only one kind of non-polar solvent (hexane) was used as extraction solvent in the whole extraction step. Absorbing microwave {mu}-SPE device, was prepared by packing activated carbon with microporous polypropylene membrane envelope, and used as not only the sorbent in {mu}-SPE, but also the microwave absorption medium. Some experimental parameters effecting on extraction efficiency was investigated and optimized. 1.0 g of sample, 8 mL of hexane and three absorbing microwave {mu}-SPE devices were added in the microwave extraction vessel, the extraction was carried out under 400 W irradiation power at 60 Degree-Sign C for 10 min. The extracts obtained by MAE-{mu}-SPE were directly analyzed by GC-MS without any clean-up process. The recoveries were in the range of 93.5-104.6%, and the relative standard deviations were lower than 8.7%.

  14. On q-power cycles in cubic graphs

    DEFF Research Database (Denmark)

    Bensmail, Julien

    2017-01-01

    In the context of a conjecture of Erdos and Gyárfás, we consider, for any q ≥ 2, the existence of q-power cycles (i.e. with length a power of q) in cubic graphs. We exhibit constructions showing that, for every q ≥ 3, there exist arbitrarily large cubic graphs with no q-power cycles. Concerning...... the remaining case q = 2 (which corresponds to the conjecture of Erdos and Gyárfás), we show that there exist arbitrarily large cubic graphs whose only 2-power cycles have length 4 only, or 8 only....

  15. AlN and Al oxy-nitride gate dielectrics for reliable gate stacks on Ge and InGaAs channels

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Y.; Li, H.; Robertson, J. [Engineering Department, Cambridge University, Cambridge CB2 1PZ (United Kingdom)

    2016-05-28

    AlN and Al oxy-nitride dielectric layers are proposed instead of Al{sub 2}O{sub 3} as a component of the gate dielectric stacks on higher mobility channels in metal oxide field effect transistors to improve their positive bias stress instability reliability. It is calculated that the gap states of nitrogen vacancies in AlN lie further away in energy from the semiconductor band gap than those of oxygen vacancies in Al{sub 2}O{sub 3}, and thus AlN might be less susceptible to charge trapping and have a better reliability performance. The unfavourable defect energy level distribution in amorphous Al{sub 2}O{sub 3} is attributed to its larger coordination disorder compared to the more symmetrically bonded AlN. Al oxy-nitride is also predicted to have less tendency for charge trapping.

  16. Characterization of N-polar AlN in GaN/AlN/(Al,Ga)N heterostructures grown by metal-organic chemical vapor deposition

    Science.gov (United States)

    Li, Haoran; Mazumder, Baishakhi; Bonef, Bastien; Keller, Stacia; Wienecke, Steven; Speck, James S.; Denbaars, Steven P.; Mishra, Umesh K.

    2017-11-01

    In GaN/(Al,Ga)N high-electron-mobility transistors (HEMT), AlN interlayer between GaN channel and AlGaN barrier suppresses alloy scattering and significantly improves the electron mobility of the two-dimensional electron gas. While high concentrations of gallium were previously observed in Al-polar AlN interlayers grown by metal-organic chemical vapor deposition, the N-polar AlN (Al x Ga1-x N) films examined by atom probe tomography in this study exhibited aluminum compositions (x) equal to or higher than 95% over a wide range of growth conditions. The also investigated AlN interlayer in a N-polar GaN/AlN/AlGaN/ S.I. GaN HEMT structure possessed a similarly high x content.

  17. AlGaN-based deep-ultraviolet light-emitting diodes grown on high-quality AlN template using MOVPE

    KAUST Repository

    Yan, Jianchang; Wang, Junxi; Zhang, Yun; Cong, Peipei; Sun, Lili; Tian, Yingdong; Zhao, Chao; Li, Jinmin

    2015-01-01

    In this article, we report the growth of high-quality AlN film using metal-organic vapor phase epitaxy. Three layers of middle-temperature (MT) AlN were introduced during the high-temperature (HT) AlN growth. During the MT-AlN layer growth, aluminum and nitrogen sources were closed for 6 seconds after every 5-nm MT-AlN, while H2 carrier gas was always on. The threading dislocation density in an AlN epi-layer on a sapphire substrate was reduced by almost half. AlGaN-based deep-ultraviolet light-emitting diodes were further fabricated based on the AlN/sapphire template. At 20 mA driving current, the emitted peak wavelength is 284.5 nm and the light output power exceeds 3 mW.

  18. AlGaN-based deep-ultraviolet light-emitting diodes grown on high-quality AlN template using MOVPE

    KAUST Repository

    Yan, Jianchang

    2015-03-01

    In this article, we report the growth of high-quality AlN film using metal-organic vapor phase epitaxy. Three layers of middle-temperature (MT) AlN were introduced during the high-temperature (HT) AlN growth. During the MT-AlN layer growth, aluminum and nitrogen sources were closed for 6 seconds after every 5-nm MT-AlN, while H2 carrier gas was always on. The threading dislocation density in an AlN epi-layer on a sapphire substrate was reduced by almost half. AlGaN-based deep-ultraviolet light-emitting diodes were further fabricated based on the AlN/sapphire template. At 20 mA driving current, the emitted peak wavelength is 284.5 nm and the light output power exceeds 3 mW.

  19. Extended analysis of the frequency dependence of the admittance of MIS structures with pulsed-laser-deposited AlN films

    Energy Technology Data Exchange (ETDEWEB)

    Simeonov, S; Bakalova, S; Szekeres, A; Kafedjiijska, E [Georgi Nadjakov Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 1784 Sofia (Bulgaria); Grigorescu, S; Socol, G; Mihailescu, I N [Lasers Department, National Institute for Lasers, Plasma and Radiation Physics, PO Box MG-54, RO-77125, Bucharest-Magurele (Romania)], E-mail: sbakalova@issp.bas.bg

    2008-05-01

    MIS structures with AlN films deposited on p-Si by pulsed laser deposition were prepared and admittance measurements were carried out in the frequency range of 100 Hz - 10 MHz. The density of traps in the AlN film and at the AlN/Si interface was evaluated using the electrical characteristics obtained, and the hopping mechanism of charge transport was determined from the dispersion of the a.c. conductance.

  20. Plastic fluctuations in empty crystals formed by cubic wireframe particles

    Science.gov (United States)

    McBride, John M.; Avendaño, Carlos

    2018-05-01

    We present a computer simulation study of the phase behavior of colloidal hard cubic frames, i.e., particles with nonconvex cubic wireframe geometry interacting purely by excluded volume. Despite the propensity of cubic wireframe particles to form cubic phases akin to their convex counterparts, these particles exhibit unusual plastic fluctuations in which a random and dynamic fraction of particles rotate around their lattice positions in the crystal lattice while the remainder of the particles remains fully ordered. We argue that this unexpected effect stems from the nonconvex geometry of the particles in which the faces of a particle can be penetrated by the vertices of the nearest neighbors even at high number densities.

  1. Bicontinuous cubic liquid crystalline nanoparticles for oral delivery of Doxorubicin

    DEFF Research Database (Denmark)

    Swarnakar, Nitin K; Thanki, Kaushik; Jain, Sanyog

    2014-01-01

    PURPOSE: The present study explores the potential of bicontinous cubic liquid crystalline nanoparticles (LCNPs) for improving therapeutic potential of doxorubicin. METHODS: Phytantriol based Dox-LCNPs were prepared using hydrotrope method, optimized for various formulation components, process...

  2. Spinor bose gases in cubic optical lattice

    International Nuclear Information System (INIS)

    Mobarak, Mohamed Saidan Sayed Mohamed

    2014-01-01

    In recent years the quantum simulation of condensed-matter physics problems has resulted from exciting experimental progress in the realm of ultracold atoms and molecules in optical lattices. In this thesis we analyze theoretically a spinor Bose gas loaded into a three-dimensional cubic optical lattice. In order to account for different superfluid phases of spin-1 bosons with a linear Zeeman effect, we work out a Ginzburg-Landau theory for the underlying spin-1 Bose-Hubbard model. To this end we add artificial symmetry-breaking currents to the spin-1 Bose-Hubbard Hamiltonian in order to break the global U (1) symmetry. With this we determine a diagrammatic expansion of the grand-canonical free energy up to fourth order in the symmetry-breaking currents and up to the leading non-trivial order in the hopping strength which is of first order. As a cross-check we demonstrate that the resulting grand-canonical free energy allows to recover the mean-field theory. Applying a Legendre transformation to the grand-canonical free energy, where the symmetry-breaking currents are transformed to order parameters, we obtain the effective Ginzburg-Landau action. With this we calculate in detail at zero temperature the Mott insulator-superfluid quantum phase boundary as well as condensate and particle number density in the superfluid phase. We find that both mean-field and Ginzburg-Landau theory yield the same quantum phase transition between the Mott insulator and superfluid phases, but the range of validity of the mean-field theory turns out to be smaller than that of the Ginzburg-Landau theory. Due to this finding we expect that the Ginzburg-Landau theory gives better results for the superfluid phase and, thus, we restrict ourselves to extremize only the effective Ginzburg-Landau action with respect to the order parameters. Without external magnetic field the superfluid phase is a polar (ferromagnetic) state for anti-ferromagnetic (ferromagnetic) interactions, i.e. only the

  3. Nanodefects in ultrahard crystalline cubic boron nitride

    International Nuclear Information System (INIS)

    Nistor, S. V.; Stefan, M.; Goovaerts, E.; Schoemaker, D.

    2002-01-01

    Cubic boron nitride (cBN), the second hardest known material after diamond, exhibits high thermal conductivity and an excellent ability to be n or p doped, which makes it a strong candidate for the next generation of high-temperature micro optical and micro electronic devices. According to recent studies, cBN exhibits a better resistance to radiation damage than diamond, which suggests potential applications in extreme radiation environments. Crystalline cBN powders of up to 0.5 mm linear size is obtained in a similar way as diamond, by catalytic conversion of hexagonal BN (hBN) to cBN at even higher pressures (> 5GPa) and temperatures (∼ 1900 K). Considering the essential role played by the nanodefects (point defects and impurities) in determining its physical properties, it is surprising how limited is the amount of published data concerning the properties of nanodefects in this material, especially by Electron Paramagnetic Resonance (EPR) spectroscopy, the most powerful method for identification and characterization of nanodefects in both insulators and semiconductors. This seems to be due mainly to the absence of natural cBN gems and the extreme difficulties in producing even mm 3 sized synthetic crystals. We shall present our recent EPR studies on cBN crystalline powders, performed in a broad temperature range from room temperature (RT) down to 1.2 K on several sorts of large size cBN powder grits of yellow and amber color for industrial applications. Previous multifrequency (9.3 GHz and 95 GHz) EPR studies of brown to black cBN crystallites prepared with excess of boron, resulted in the discovery of two new types of paramagnetic point defects with different spectral properties, called the D1 and D2 centers. Our X(9.3 GHz)-band EPR investigations resulted in the observation in amber cBN crystalline powders of a spectrum with a strong temperature dependence of the lineshape. It was found that for high and low temperatures, respectively, the numerical

  4. The Combinatorial Rigidity Conjecture is False for Cubic Polynomials

    DEFF Research Database (Denmark)

    Henriksen, Christian

    2003-01-01

    We show that there exist two cubic polynomials with connected Julia sets which are combinatorially equivalent but not topologically conjugate on their Julia sets. This disproves a conjecture by McMullen from 1995.......We show that there exist two cubic polynomials with connected Julia sets which are combinatorially equivalent but not topologically conjugate on their Julia sets. This disproves a conjecture by McMullen from 1995....

  5. Interaction of dispersed cubic phases with blood components

    DEFF Research Database (Denmark)

    Bode, J C; Kuntsche, Judith; Funari, S S

    2013-01-01

    The interaction of aqueous nanoparticle dispersions, e.g. based on monoolein/poloxamer 407, with blood components is an important topic concerning especially the parenteral way of administration. Therefore, the influence of human and porcine plasma on dispersed cubic phases was investigated. Part...... activity of cubic phases based on monoolein and poloxamer 188, on soy phosphatidylcholine, glycerol dioleate and polysorbate 80 or the parenteral fat emulsion Lipofundin MCT 20%....

  6. Transdermal delivery of paeonol using cubic gel and microemulsion gel

    Science.gov (United States)

    Luo, Maofu; Shen, Qi; Chen, Jinjin

    2011-01-01

    Background The aim of this study was to develop new systems for transdermal delivery of paeonol, in particular microemulsion gel and cubic gel formulations. Methods Various microemulsion vehicles were prepared using isopropyl myristate as an oil phase, polyoxyethylated castor oil (Cremophor® EL) as a surfactant, and polyethylene glycol 400 as a cosurfactant. In the optimum microemulsion gel formulation, carbomer 940 was selected as the gel matrix, and consisted of 1% paeonol, 4% isopropyl myristate, 28% Cremophor EL/polyethylene glycol 400 (1:1), and 67% water. The cubic gel was prepared containing 3% paeonol, 30% water, and 67% glyceryl monooleate. Results A skin permeability test using excised rat skins indicated that both the cubic gel and microemulsion gel formulations had higher permeability than did the paeonol solution. An in vivo pharmacokinetic study done in rats showed that the relative bioavailability of the cubic gel and microemulsion gel was enhanced by about 1.51-fold and 1.28-fold, respectively, compared with orally administered paeonol suspension. Conclusion Both the cubic gel and microemulsion gel formulations are promising delivery systems to enhance the skin permeability of paeonol, in particular the cubic gel. PMID:21904450

  7. Generating Tunable Magnetism in AlN Nanoribbons Using Anion/Cation Vacancies:a First-Principles Prediction

    Science.gov (United States)

    Chegeni, Mahdieh; Beiranvand, Razieh; Valedbagi, Shahoo

    2017-04-01

    Using first-principles approach, we theoretically study the effect of anion/cation vacancies on structural and electro-magnetic properties of zigzag AlN nanoribbons (ZAlNNRs). Calculations were performed using a full spin-polarized method within the density functional theory (DFT). Our findings shed light on how the edge states combined with vacancy engineering can affect electro-magnetic properties of ZAlNNRs. We found that depending on the nature and number of vacancies, ZAlNNRs can design as half-metal or semiconductor. Our results reveal a significant amount of spin magnetic moment for ZAlNNR with Al vacancies (VAl). These results may open new applications of AlN nano-materials in spintronics.

  8. Indium hexagonal island as seed-layer to boost a-axis orientation of AlN thin films

    Science.gov (United States)

    Redjdal, N.; Salah, H.; Azzaz, M.; Menari, H.; Manseri, A.; Guedouar, B.; Garcia-Sanchez, A.; Chérif, S. M.

    2018-06-01

    Highly a-axis oriented aluminum nitride films have been grown on Indium coated (100) Si substrate by DC reactive magnetron sputtering. It is shown that In incorporated layer improve the extent of preferential growth along (100) axis and form dense AlN films with uniform surface and large grains, devoid of micro-cracks. As revealed by SEM cross section images, AlN structure consists of oriented columnar grains perpendicular to the Si surface, while AlN/In structure results in uniformely tilted column. SEM images also revealed the presence of In hexagonal islands persistent throughout the entire growth. Micro -Raman spectroscopy of the surface and the cross section of the AlN/In grown films evidenced their high degree of homogeneity and cristallinity.

  9. Cu-doped AlN: A possible spinaligner at room-temperature grown by molecular beam epitaxy?

    Science.gov (United States)

    Ganz, P. R.; Schaadt, D. M.

    2011-12-01

    Cu-doped AlN was prepared by plasma assisted molecular beam epitaxy on C-plane sapphire substrates. The growth conditions were investigated for different Cu to Al flux ratios from 1.0% to 4.0%. The formation of Cu-Al alloys on the surface was observed for all doping level. In contrast to Cu-doped GaN, all samples showed diamagnetic behavior determined by SQUID measurements.

  10. The impact of electrode materials on 1/f noise in piezoelectric AlN contour mode resonators

    Science.gov (United States)

    Kim, Hoe Joon; Jung, Soon In; Segovia-Fernandez, Jeronimo; Piazza, Gianluca

    2018-05-01

    This paper presents a detailed analysis on the impact of electrode materials and dimensions on flicker frequency (1/f) noise in piezoelectric aluminum nitride (AlN) contour mode resonators (CMRs). Flicker frequency noise is a fundamental noise mechanism present in any vibrating mechanical structure, whose sources are not generally well understood. 1 GHz AlN CMRs with three different top electrode materials (Al, Au, and Pt) along with various electrode lengths and widths are fabricated to control the overall damping acting on the device. Specifically, the use of different electrode materials allows control of thermoelastic damping (TED), which is the dominant damping mechanism for high frequency AlN CMRs and largely depends on the thermal properties (i.e. thermal diffusivities and expansion coefficients) of the metal electrode rather than the piezoelectric film. We have measured Q and 1/f noise of 68 resonators and the results show that 1/f noise decreases with increasing Q, with a power law dependence that is about 1/Q4. Interestingly, the noise level also depends on the type of electrode materials. Devices with Pt top electrode demonstrate the best noise performance. Our results help unveiling some of the sources of 1/f noise in these resonators, and indicate that a careful selection of the electrode material and dimensions could reduce 1/f noise not only in AlN-CMRs, but also in various classes of resonators, and thus enable ultra-low noise mechanical resonators for sensing and radio frequency applications.

  11. The impact of electrode materials on 1/f noise in piezoelectric AlN contour mode resonators

    Directory of Open Access Journals (Sweden)

    Hoe Joon Kim

    2018-05-01

    Full Text Available This paper presents a detailed analysis on the impact of electrode materials and dimensions on flicker frequency (1/f noise in piezoelectric aluminum nitride (AlN contour mode resonators (CMRs. Flicker frequency noise is a fundamental noise mechanism present in any vibrating mechanical structure, whose sources are not generally well understood. 1 GHz AlN CMRs with three different top electrode materials (Al, Au, and Pt along with various electrode lengths and widths are fabricated to control the overall damping acting on the device. Specifically, the use of different electrode materials allows control of thermoelastic damping (TED, which is the dominant damping mechanism for high frequency AlN CMRs and largely depends on the thermal properties (i.e. thermal diffusivities and expansion coefficients of the metal electrode rather than the piezoelectric film. We have measured Q and 1/f noise of 68 resonators and the results show that 1/f noise decreases with increasing Q, with a power law dependence that is about 1/Q4. Interestingly, the noise level also depends on the type of electrode materials. Devices with Pt top electrode demonstrate the best noise performance. Our results help unveiling some of the sources of 1/f noise in these resonators, and indicate that a careful selection of the electrode material and dimensions could reduce 1/f noise not only in AlN-CMRs, but also in various classes of resonators, and thus enable ultra-low noise mechanical resonators for sensing and radio frequency applications.

  12. Structural stabilities and electronic properties of Mg28-nAln clusters: A first-principles study

    Directory of Open Access Journals (Sweden)

    Bao-Juan Lu

    2017-09-01

    Full Text Available In this paper, we have constructed the alloy configurations of Mg28-nAln by replacing atoms at various possible positions, starting from the stable structures of Mg28 and Al28 clusters. According to the symmetry of the cluster structure, the isomers of these initial structures have been screened with the congruence check, which would reduce computational hours and improve efficiency. Using the first-principles method, the structural evolution, mixing behavior and electronic properties of Mg28-nAln clusters are investigated for all compositions. We conclude that Al atoms prefer to reside in the central positions of Mg−Al clusters and Mg atoms tend to occupy the peripheral location. The negative mixing enthalpies imply the stabilities of these Mg-Al clusters and thus possible applications in catalysis and hydrogen storage materials. Among Mg28-nAln clusters, Mg24Al4, Mg21Al7, Mg14Al14, Mg26Al2 and Mg27Al1 present relatively high thermodynamic stabilities, and the electronic properties of these stable structures are discussed with the charge distributions around the Fermi level.

  13. Oblique-angle sputtered AlN nanocolumnar layer as a buffer layer in GaN-based LED

    International Nuclear Information System (INIS)

    Chen, Lung-Chien; Tien, Ching-Ho; Liao, Wei-Chian; Luo, Yi-Min

    2011-01-01

    This work presents an aluminum nitride (AlN) nanocolumnar layer sputtered at various oblique angles and its application as a buffer layer for GaN-based light-emitting diodes (LEDs) that are fabricated on sapphire substrates. The OA-AlN nanocolumnar layer has a diameter of about 30-60 nm. The GaN-based LED structure is perpendicularly extended from the OA-AlN nanocolumnar layer. Then, the nanocolumnar structure is merged into p-GaN layer to form a mesa structure with a diameter of about 200-600 nm on the surface of the GaN-based LED. Moreover, optical characteristics of the LED were studied using photoluminescence, along with the blue-shifts observed as well. - Research highlights: → An AlN nanocolumnar buffer layer prepared by oblique-angle (OA) deposition. → GaN-based LED structures were grown on a sapphire substrate with an AlN nanocolumnar buffer layer. → The OA-AlN nanocolumnar layer has a diameter of about 30-60 nm.

  14. Roles of kinetics and energetics in the growth of AlN by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Im, I. H.; Minegishi, T.; Hanada, T.; Lee, S. W.; Cho, M. W.; Yao, T.; Oh, D. C.; Chang, J. H.

    2006-01-01

    The roles of kinetics and energetics in the growth processes of AlN on c-sapphire by plasma assisted molecular beam epitaxy are investigated by varying the growth rate from 1 to 31 A/min and the substrate temperature from 800 to 1000 .deg. C. The energetics is found to govern the growth of AlN in the low-growth rate region even at a low substrate temperature of 800 .deg. C owing to the enhanced residence time of adatoms, thereby increasing the surface migration length. As the growth rate increases, the growth tends to be governed by kinetics because of a reduction in the residence time of adatoms. Consequently, the surface roughness and crystal quality are greatly improved for the low-growth-rate case. In addition, the lattice strain relaxation is completed from the beginning of epitaxy for energetics-limiting growth while lattice strain relaxation is retarded for kinetics-limiting growth because of pre-existing partial strain relaxation. Energetics becomes more favorable as the substrate temperature is raised because of an increase in the surface diffusion length owing to an enhanced diffusion coefficient. Consequently high-crystal-quality AlN layers are grown under the energetics-limiting growth condition with a screw dislocation density of 7.4 x 10 8 cm -2 even for a thin 42-nm thick film.

  15. Emerging methanol-tolerant AlN nanowire oxygen reduction electrocatalyst for alkaline direct methanol fuel cell.

    Science.gov (United States)

    Lei, M; Wang, J; Li, J R; Wang, Y G; Tang, H L; Wang, W J

    2014-08-11

    Replacing precious and nondurable Pt catalysts with cheap materials is a key issue for commercialization of fuel cells. In the case of oxygen reduction reaction (ORR) catalysts for direct methanol fuel cell (DMFC), the methanol tolerance is also an important concern. Here, we develop AlN nanowires with diameters of about 100-150 nm and the length up to 1 mm through crystal growth method. We find it is electrochemically stable in methanol-contained alkaline electrolyte. This novel material exhibits pronounced electrocatalytic activity with exchange current density of about 6.52 × 10(-8) A/cm(2). The single cell assembled with AlN nanowire cathodic electrode achieves a power density of 18.9 mW cm(-2). After being maintained at 100 mA cm(-2) for 48 h, the AlN nanowire-based single cell keeps 92.1% of the initial performance, which is in comparison with 54.5% for that assembled with Pt/C cathode. This discovery reveals a new type of metal nitride ORR catalyst that can be cheaply produced from crystal growth method.

  16. Indentation-Induced Mechanical Deformation Behaviors of AlN Thin Films Deposited on c-Plane Sapphire

    International Nuclear Information System (INIS)

    Jian, Sh.R.; Juang, J.Y.

    2012-01-01

    The mechanical properties and deformation behaviors of AlN thin films deposited on c-plane sapphire substrates by helicon sputtering method were determined using the Berkovich nano indentation and cross-sectional transmission electron microscopy (XTEM). The load-displacement curves show the 'pop-ins' phenomena during nano indentation loading, indicative of the formation of slip bands caused by the propagation of dislocations. No evidence of nano indentation-induced phase transformation or cracking patterns was observed up to the maximum load of 80 mN, from either XTEM or atomic force microscopy (AFM) of the mechanically deformed regions. Instead, XTEM revealed that the primary deformation mechanism in AlN thin films is via propagation of dislocations on both basal and pyramidal planes. Furthermore, the hardness and Young's modulus of AlN thin films estimated using the continuous contact stiffness measurements (CSMs) mode provided with the nanoindenter are 16.2 GPa and 243.5 GPa, respectively.

  17. Studying the response of CR-39 to radon in non-polar liquids above water by Monte Carlo simulation and measurement

    International Nuclear Information System (INIS)

    Rezaie, Mohammad Reza; Sohrabi, Mehdi; Negarestani, Ali

    2013-01-01

    The application of CR-39 has been extensive for measurement of radon and progeny in air of dwellings, but limited as regards to measurements of radon in water. In this paper, a new method is introduced for efficient measurement of radon in water by registering alpha particle tracks in a CR-39 detector placed in a non-polar medium such as cyclohexane, hexane and olive oil when each mixed with water, then separated and fixed above water, as a two-phase media. The method introduced here is however different from the widely used liquid - liquid extraction technique by liquid scintillation spectrometry since it is a passive detection method (CR-39) in a non-polar liquid with enhanced absorption of radon in the liquid, it has a capability for long sample counting to decrease the minimum detection limit (MDL), it does not require sophisticated low light counting systems, and it has the potential for simultaneous measurements of large number of samples for large-scale applications. It also has a low cost and is readily available. A new Monte Carlo calculation of energy-distance travelled by alphas from radon and progeny in a medium was also investigated. The sensitivity of CR-39 detector to radon and progeny in water was determined under two conditions; in a single-phase and two-phase media. In a single-phase medium, CR-39 is directly placed either in air, water, cyclohexane, hexane or olive oil. When CR-39 is placed directly in water, its sensitivity is (2.4 ± 0.1) × 10 −4 (track/cm 2 )/(Bq.d/m 3 ). In the two-phase media, CR-39 is placed either in cyclohexane, hexane or olive oil when each is fixed above water. The sensitivities in the two-phase media are significantly enhanced and are respectively (1.98 ± 0.10) × 10 −2 , (2.8 ± 0.15) × 10 −2 and (2.86 ± 0.15) × 10 −2 (track/cm 2 )/(Bq.d/m 3 ). The sensitivies are about 76, 82 and 110 times more than that of when CR-39 is directly placed in water. The new method is a novel alternative for radon

  18. Preparation of a Non-Polar ZnO Film on a Single-Crystal NdGaO3 Substrate by the RF Sputtering Method

    Science.gov (United States)

    Kashiwaba, Y.; Tanaka, Y.; Sakuma, M.; Abe, T.; Imai, Y.; Kawasaki, K.; Nakagawa, A.; Niikura, I.; Kashiwaba, Y.; Osada, H.

    2018-04-01

    Preparation of non-polar ZnO ( 11\\overline{2} 0 ) films on single-crystal NdGaO3 (NGO) (001) substrates was successfully achieved by the radio frequency (RF) sputtering method. Orientation, deposition rate, and surface roughness of ZnO films strongly depend on the working pressure. Characteristics of ZnO films deposited on single-crystal NGO (001) substrates were compared with those of ZnO films deposited on single-crystal sapphire ( 01\\overline{1} 2 ) substrates. An x-ray diffraction peak of the ZnO ( 11\\overline{2} 0 ) plane was observed on ZnO films deposited on single-crystal NGO (001) substrates under working pressure of less than 0.5 Pa. On the other hand, uniaxially oriented ZnO ( 11\\overline{2} 0 ) films on single-crystal sapphire ( 01\\overline{1} 2 ) substrates were observed under working pressure of 0.1 Pa. The mechanism by which the diffraction angle of the ZnO ( 11\\overline{2} 0 ) plane on single-crystal NGO (001) substrates was shifted is discussed on the basis of anisotropic stress of lattice mismatch. The deposition rate of ZnO films decreased with an increase in working pressure, and the deposition rate on single-crystal NGO (001) substrates was larger than that on single-crystal sapphire ( 01\\overline{1} 2 ) substrates. Root mean square (RMS) roughness of ZnO films increased with an increase in working pressure, and RMS roughness of ZnO films on single-crystal NGO (001) substrates was smaller than that of ZnO films on single-crystal sapphire ( 01\\overline{1} 2 ) substrates even though the film thickness on single-crystal NGO (001) substrates was greater than that on sapphire substrates. It is thought that a single-crystal NGO (001) substrate is useful for deposition of non-polar ZnO ( 11\\overline{2} 0 ) films.

  19. Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes

    Science.gov (United States)

    Hu, Hongpo; Zhou, Shengjun; Liu, Xingtong; Gao, Yilin; Gui, Chengqun; Liu, Sheng

    2017-03-01

    We report on the demonstration of GaN-based ultraviolet light-emitting diodes (UV LEDs) emitting at 375 nm grown on patterned sapphire substrate (PSS) with in-situ low temperature GaN/AlGaN nucleation layers (NLs) and ex-situ sputtered AlN NL. The threading dislocation (TD) densities in GaN-based UV LEDs with GaN/AlGaN/sputtered AlN NLs were determined by high-resolution X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (TEM), which revealed that the TD density in UV LED with AlGaN NL was the highest, whereas that in UV LED with sputtered AlN NL was the lowest. The light output power (LOP) of UV LED with AlGaN NL was 18.2% higher than that of UV LED with GaN NL owing to a decrease in the absorption of 375 nm UV light in the AlGaN NL with a larger bandgap. Using a sputtered AlN NL instead of the AlGaN NL, the LOP of UV LED was further enhanced by 11.3%, which is attributed to reduced TD density in InGaN/AlInGaN active region. In the sputtered AlN thickness range of 10-25 nm, the LOP of UV LED with 15-nm-thick sputtered AlN NL was the highest, revealing that optimum thickness of the sputtered AlN NL is around 15 nm.

  20. Methods of optimization of reactive sputtering conditions of Al target during AlN films deposition

    Directory of Open Access Journals (Sweden)

    Chodun Rafal

    2015-12-01

    Full Text Available Encouraged by recent studies and considering the well-documented problems occurring during AlN synthesis, we have chosen two diagnostic methods which would enable us to fully control the process of synthesis and characterize the synthesized aluminum nitride films. In our experiment we have compared the results coming from OES measurements of plasma and circulating power characteristics of the power supply with basic features of the deposited layers. The dual magnetron system operating in AC mode was used in our studies. Processes of aluminum target sputtering were carried out in an atmosphere of a mixture of argon and nitrogen. The plasma emission spectra were measured with the use of a monochromator device. Analyses were made by comparing the positions and intensities of spectral lines of the plasma components. The results obtained allowed us to characterize the sputtering process under various conditions of gas mixture compositions as well as power distribution more precisely, which is reported in this work. The measured spectra were related to the deposition rate, the structure morphology of the films and chemical composition. Our work proved that the use of plasma OES and circulating power measurements make possible to control the process of sputtering and synthesis of deposited films in situ.

  1. White Noise Responsiveness of an AlN Piezoelectric MEMS Cantilever Vibration Energy Harvester

    International Nuclear Information System (INIS)

    Jia, Y; Seshia, A A

    2014-01-01

    This paper reports the design, analysis and experimental characterisation of a piezoelectric MEMS cantilever vibration energy harvester, the enhancement of its power output by adding various values of end mass, as well as assessing the responsiveness towards white noise. Devices are fabricated using a 0.5 μm AlN on 10 μm doped Si process. Cantilevers with 5 mm length and 2 mm width were tested at either unloaded condition (MC0: f n 577 Hz) or subjected to estimated end masses of 2 mg (MC2: f n 129 Hz) and 5 mg (MC5: f n 80 Hz). While MC0 was able to tolerate a higher drive acceleration prior to saturation (7 g with 0.7 μW), MC5 exhibited higher peak power attainable at a lower input vibration (2.56 μW at 3 ms −2 ). MC5 was also subjected to band-limited (10 Hz to 2 kHz) white noise vibration, where the power response was only a fraction of its resonant counterpart for the same input: peak instantaneous power >1 μW was only attainable beyond 2 g of white noise, whereas single frequency resonant response only required 2.5 ms −2 . Both the first resonant response and the band-limited white noise response were also compared to a numerical model, showing close agreements

  2. Cathodoluminescence study of Mg activation in non-polar and semi-polar faces of undoped/Mg-doped GaN core-shell nanorods

    Science.gov (United States)

    Hortelano, V.; Martínez, O.; Cuscó, R.; Artús, L.; Jiménez, J.

    2016-03-01

    Spectrally and spatially resolved cathodoluminescence (CL) measurements were carried out at 80 K on undoped/Mg-doped GaN core-shell nanorods grown by selective area growth metalorganic vapor phase epitaxy in order to investigate locally the optical activity of the Mg dopants. A study of the luminescence emission distribution over the different regions of the nanorods is presented. We have investigated the CL fingerprints of the Mg incorporation into the non-polar lateral prismatic facets and the semi-polar facets of the pyramidal tips. The amount of Mg incorporation/activation was varied by using several Mg/Ga flow ratios and post-growth annealing treatment. For lower Mg/Ga flow ratios, the annealed nanorods clearly display a donor-acceptor pair band emission peaking at 3.26-3.27 eV and up to 4 LO phonon replicas, which can be considered as a reliable indicator of effective p-type Mg doping in the nanorod shell. For higher Mg/Ga flow ratios, a substantial enhancement of the yellow luminescence emission as well as several emission subbands are observed, which suggests an increase of disorder and the presence of defects as a consequence of the excess Mg doping.

  3. Optical properties of InN nanocolumns: Electron accumulation at InN non-polar surfaces and dependence on the growth conditions

    Energy Technology Data Exchange (ETDEWEB)

    Segura-Ruiz, J.; Cantarero, A. [Materials Science Institute, University of Valencia (Spain); Garro, N. [Materials Science Institute, University of Valencia (Spain); Fundacio General de la Universitat de Valencia, Valencia (Spain); Iikawa, F. [Instituto de Fisica ' ' Gleb Wataghin' ' , UNICAMP, Campinas-SP (Brazil); Denker, C.; Malindretos, J.; Rizzi, A. [IV. Physikalisches Institut, Georg-August Universitaet Goettingen (Germany)

    2009-06-15

    InN nanocolumns grown by plasma-assisted molecular beam epitaxy have been studied by photoluminescence (PL) and photoluminescence excitation (PLE). The PL peak energy was red-shifted with respect to the PLE onset and both energies were higher than the low temperature band-gap reported for InN. PL and PLE experiments for different excitation and detection energies indicated that the PL peaks were homogeneously broadened. This overall phenomenology has been attributed to the effects of an electron accumulation layer present at the non-polar surfaces of the InN nanocolumns. Variations in the growth conditions modify the edge of the PLE spectra and the PL peak energies evidencing that the density of free electrons can be somehow controlled by the growth parameters. It was observed that In-BEP and substrate temperature leading to shorter In diffusion lengths diminished the effects of the electron accumulation layer on the optical properties. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Optical properties of InN nanocolumns: Electron accumulation at InN non-polar surfaces and dependence on the growth conditions

    International Nuclear Information System (INIS)

    Segura-Ruiz, J.; Cantarero, A.; Garro, N.; Iikawa, F.; Denker, C.; Malindretos, J.; Rizzi, A.

    2009-01-01

    InN nanocolumns grown by plasma-assisted molecular beam epitaxy have been studied by photoluminescence (PL) and photoluminescence excitation (PLE). The PL peak energy was red-shifted with respect to the PLE onset and both energies were higher than the low temperature band-gap reported for InN. PL and PLE experiments for different excitation and detection energies indicated that the PL peaks were homogeneously broadened. This overall phenomenology has been attributed to the effects of an electron accumulation layer present at the non-polar surfaces of the InN nanocolumns. Variations in the growth conditions modify the edge of the PLE spectra and the PL peak energies evidencing that the density of free electrons can be somehow controlled by the growth parameters. It was observed that In-BEP and substrate temperature leading to shorter In diffusion lengths diminished the effects of the electron accumulation layer on the optical properties. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. An absorbing microwave micro-solid-phase extraction device used in non-polar solvent microwave-assisted extraction for the determination of organophosphorus pesticides.

    Science.gov (United States)

    Wang, Ziming; Zhao, Xin; Xu, Xu; Wu, Lijie; Su, Rui; Zhao, Yajing; Jiang, Chengfei; Zhang, Hanqi; Ma, Qiang; Lu, Chunmei; Dong, Deming

    2013-01-14

    A single-step extraction-cleanup method, including microwave-assisted extraction (MAE) and micro-solid-phase extraction (μ-SPE), was developed for the extraction of ten organophosphorus pesticides in vegetable and fruit samples. Without adding any polar solvent, only one kind of non-polar solvent (hexane) was used as extraction solvent in the whole extraction step. Absorbing microwave μ-SPE device, was prepared by packing activated carbon with microporous polypropylene membrane envelope, and used as not only the sorbent in μ-SPE, but also the microwave absorption medium. Some experimental parameters effecting on extraction efficiency was investigated and optimized. 1.0 g of sample, 8 mL of hexane and three absorbing microwave μ-SPE devices were added in the microwave extraction vessel, the extraction was carried out under 400 W irradiation power at 60°C for 10 min. The extracts obtained by MAE-μ-SPE were directly analyzed by GC-MS without any clean-up process. The recoveries were in the range of 93.5-104.6%, and the relative standard deviations were lower than 8.7%. Copyright © 2012 Elsevier B.V. All rights reserved.

  6. Stir bar sorptive extraction and liquid chromatography-tandem mass spectrometry determination of polar and non-polar emerging and priority pollutants in environmental waters.

    Science.gov (United States)

    Aparicio, Irene; Martín, Julia; Santos, Juan Luis; Malvar, José Luis; Alonso, Esteban

    2017-06-02

    An analytical method based on stir bar sorptive extraction (SBSE) was developed and validated for the determination of environmental concern pollutants in environmental waters by liquid chromatography-tandem mass spectrometry (LC-MS/MS). Target compounds include six water and oil repellents (perfluorinated compounds), four preservatives (butylated hydroxytoluene and three parabens), two plasticizers (bisphenol A and di(2-ethylhexyl)phthalate), seven surfactants (four linear alkylbenzene sulfonates, nonylphenol and two nonylphenol ethoxylates), a flame retardant (hexabromocyclododecane), four hormones, fourteen pharmaceutical compounds, an UV-filter (2-ethylhexyl 4-methoxycinnamate) and nine pesticides. To achieve the simultaneous extraction of polar and non-polar pollutants two stir bar coatings were tested, the classic polydimethylsiloxane (PDMS) coating and the novel ethylene glycol modified silicone (EG-silicone). The best extraction recoveries were obtained using EG-silicone coating. The effects of sample pH, volume and ionic strength and extraction time on extraction recoveries were evaluated. The analytical method was validated for surface water and tap water samples. The method quantification limits ranged from 7.0ngL -1 to 177ngL -1 . The inter-day precision, expressed as relative standard deviation, was lower than 20%. Accuracy, expressed as relative recovery values, was in the range from 61 to 130%. The method was applied for the determination of the 48 target compounds in surface and tap water samples. Copyright © 2017 Elsevier B.V. All rights reserved.

  7. In vitro biocompatibility and proliferative effects of polar and non-polar extracts of cucurbita ficifolia on human mesenchymal stem cells.

    Science.gov (United States)

    Aristatile, Balakrishnan; Alshammari, Ghedeir M

    2017-05-01

    Cucurbita ficifolia (C. ficifolia) has been traditionally known for its medicinal properties as an antioxidant, anti-diabetic and anti-inflammatory agent. However, there has been an enduring attention towards the identification of unique method, to isolate the natural components for therapeutic applications. Our study focuses on different polar and non-polar solvents (methanol, hexane and chloroform) to extract the bioactive components from C. ficifolia (pumpkin) and to study the biocompatibility and cytotoxicity effects on human bone marrow-mesenchymal stem cells (hBM-MSCs). The extracts were screened for their effects on cytotoxicity, cell proliferation and cell cycle on the hBM-MSCs cell line. The assays demonstrated that the chloroform extract was highly biocompatible, with less cytotoxic effect, and enhanced the cell proliferation. The methanol extract did not exhibit significant cytotoxicity when compare to the control. Concordantly, the cell cycle analysis confirmed that chloroform extract enhances the proliferation at lower concentrations. On the other hand, hexane extract showed high level of cytotoxicity with apoptotic and necrotic changes in hBM-MSCs. Collectively, our data revealed that chloroform is a good candidate to extract the bioactive components from C. ficifolia. Furthermore, our results suggest that specific gravity and density of the solvent might play a crucial role in the extraction process, which warrants further investigations. Copyright © 2017 Elsevier Masson SAS. All rights reserved.

  8. Comparison of methods for calculating thermodynamic properties of binary mixtures in the sub and super critical state: Lee-Kesler and cubic equations of state for binary mixtures containing either CO2 or H2S

    International Nuclear Information System (INIS)

    Yang, Jyisy; Griffiths, Peter R.; Goodwin, Anthony R.H.

    2003-01-01

    The (ρ,T,p) and (vapor + liquid) equilibria for fluid mixtures containing either CO 2 or H 2 S have been determined from 13 equations of state. The estimated values have been compared with published experimental results. CO 2 and H 2 S were used to represent non-polar and polar fluids, respectively. The equations of state investigated were as follows: (a) the Lee-Kesler equation; (b) two equations that included new reference fluids for the Lee-Kesler method; (c) three so-called extended equations of state; and (d) seven cubic equations of state. After adjustment of the binary interaction parameters the predicted values differed from the experimental data by about 0.8% for CO 2 mixtures while for H 2 S mixtures the uncertainty was about ±2.8%. Somewhat larger errors, although still lower than ±5%, were obtained for co-existing phase densities; the Lee-Kesler method provided results of the highest accuracy. The cubic equations proposed by Schmidt and Wenzel and Valderrama provide the most reliable predictions of both single and co-existing phase densities. Comparison of the predicted (vapor + liquid) equilibrium with experiment shows that each of the seven cubic equations provides results of similar accuracy and all within ±6%

  9. [Multimodal medical image registration using cubic spline interpolation method].

    Science.gov (United States)

    He, Yuanlie; Tian, Lianfang; Chen, Ping; Wang, Lifei; Ye, Guangchun; Mao, Zongyuan

    2007-12-01

    Based on the characteristic of the PET-CT multimodal image series, a novel image registration and fusion method is proposed, in which the cubic spline interpolation method is applied to realize the interpolation of PET-CT image series, then registration is carried out by using mutual information algorithm and finally the improved principal component analysis method is used for the fusion of PET-CT multimodal images to enhance the visual effect of PET image, thus satisfied registration and fusion results are obtained. The cubic spline interpolation method is used for reconstruction to restore the missed information between image slices, which can compensate for the shortage of previous registration methods, improve the accuracy of the registration, and make the fused multimodal images more similar to the real image. Finally, the cubic spline interpolation method has been successfully applied in developing 3D-CRT (3D Conformal Radiation Therapy) system.

  10. Deformation of the cubic open string field theory

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Taejin, E-mail: taejin@kangwon.ac.kr

    2017-05-10

    We study a consistent deformation of the cubic open bosonic string theory in such a way that the non-planar world sheet diagrams of the perturbative string theory are mapped onto their equivalent planar diagrams of the light-cone string field theory with some length parameters fixed. An explicit evaluation of the cubic string vertex in the zero-slope limit yields the correct relationship between the string coupling constant and the Yang–Mills coupling constant. The deformed cubic open string field theory is shown to produce the non-Abelian Yang–Mills action in the zero-slope limit if it is defined on multiple D-branes. Applying the consistent deformation systematically to multi-string world sheet diagrams, we may be able to calculate scattering amplitudes with an arbitrary number of external open strings.

  11. Deformation of the cubic open string field theory

    Directory of Open Access Journals (Sweden)

    Taejin Lee

    2017-05-01

    Full Text Available We study a consistent deformation of the cubic open bosonic string theory in such a way that the non-planar world sheet diagrams of the perturbative string theory are mapped onto their equivalent planar diagrams of the light-cone string field theory with some length parameters fixed. An explicit evaluation of the cubic string vertex in the zero-slope limit yields the correct relationship between the string coupling constant and the Yang–Mills coupling constant. The deformed cubic open string field theory is shown to produce the non-Abelian Yang–Mills action in the zero-slope limit if it is defined on multiple D-branes. Applying the consistent deformation systematically to multi-string world sheet diagrams, we may be able to calculate scattering amplitudes with an arbitrary number of external open strings.

  12. Cubic interactions of Maxwell-like higher spins

    Energy Technology Data Exchange (ETDEWEB)

    Francia, Dario [Scuola Normale Superiore and INFN,Piazza dei Cavalieri, 7 I-56126 Pisa (Italy); Monaco, Gabriele Lo [Dipartimento di Fisica, Università di Pisa,Piazza Fibonacci, 3, I-56126, Pisa (Italy); Dipartimento di Fisica, Università di Milano-Bicocca,Piazza della Scienza 3, I-20126 Milano (Italy); Mkrtchyan, Karapet [Max Planck Institut für Gravitationsphysik,Am Mühlenberg 1, Potsdam 14476 (Germany)

    2017-04-12

    We study the cubic vertices for Maxwell-like higher-spins in flat and (A)dS background spaces of any dimension. Reducibility of their free spectra implies that a single cubic vertex involving any three fields subsumes a number of couplings among different particles of various spins. The resulting vertices do not involve traces of the fields and in this sense are simpler than their Fronsdal counterparts. We propose an extension of both the free theory and of its cubic deformation to a more general class of partially reducible systems, that one can obtain from the original theory upon imposing trace constraints of various orders. The key to our results is a version of the Noether procedure allowing to systematically account for the deformations of the transversality conditions to be imposed on the gauge parameters at the free level.

  13. Deformation of the cubic open string field theory

    International Nuclear Information System (INIS)

    Lee, Taejin

    2017-01-01

    We study a consistent deformation of the cubic open bosonic string theory in such a way that the non-planar world sheet diagrams of the perturbative string theory are mapped onto their equivalent planar diagrams of the light-cone string field theory with some length parameters fixed. An explicit evaluation of the cubic string vertex in the zero-slope limit yields the correct relationship between the string coupling constant and the Yang–Mills coupling constant. The deformed cubic open string field theory is shown to produce the non-Abelian Yang–Mills action in the zero-slope limit if it is defined on multiple D-branes. Applying the consistent deformation systematically to multi-string world sheet diagrams, we may be able to calculate scattering amplitudes with an arbitrary number of external open strings.

  14. Generalized Born-Infeld actions and projective cubic curves

    Energy Technology Data Exchange (ETDEWEB)

    Ferrara, S. [Department of Physics, CERN Theory Division, CH - 1211 Geneva 23 (Switzerland); INFN - Laboratori Nazionali di Frascati, Via Enrico Fermi 40, I-00044, Frascati (Italy); Porrati, M. [CCPP, Department of Physics, NYU, 4 Washington Pl., New York, NY, 10003 (United States); Sagnotti, A. [Department of Physics, CERN Theory Division, CH - 1211 Geneva 23 (Switzerland); Stora, R. [Department of Physics, CERN Theory Division, CH - 1211 Geneva 23 (Switzerland); Laboratoire d' Annecy-le-Vieux de Physique Theorique (LAPTH), F-74941, Annecy-le-Vieux, Cedex (France); Yeranyan, A. [INFN - Laboratori Nazionali di Frascati, Via Enrico Fermi 40, I-00044, Frascati (Italy); Centro Studi e Ricerche Enrico Fermi, Via Panisperna 89A, 00184, Roma (Italy)

    2015-04-01

    We investigate U(1){sup n} supersymmetric Born-Infeld Lagrangians with a second non-linearly realized supersymmetry. The resulting non-linear structure is more complex than the square root present in the standard Born-Infeld action, and nonetheless the quadratic constraints determining these models can be solved exactly in all cases containing three vector multiplets. The corresponding models are classified by cubic holomorphic prepotentials. Their symmetry structures are associated to projective cubic varieties. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  15. 3D confocal imaging in CUBIC-cleared mouse heart

    Energy Technology Data Exchange (ETDEWEB)

    Nehrhoff, I.; Bocancea, D.; Vaquero, J.; Vaquero, J.J.; Lorrio, M.T.; Ripoll, J.; Desco, M.; Gomez-Gaviro, M.V.

    2016-07-01

    Acquiring high resolution 3D images of the heart enables the ability to study heart diseases more in detail. Here, the CUBIC (clear, unobstructed brain imaging cocktails and computational analysis) clearing protocol was adapted for thick mouse heart sections to increase the penetration depth of the confocal microscope lasers into the tissue. The adapted CUBIC clearing of the heart lets the antibody penetrate deeper into the tissue by a factor of five. The here shown protocol enables deep 3D highresolution image acquisition in the heart. This allows a much more accurate assessment of the cellular and structural changes that underlie heart diseases. (Author)

  16. Eisenstein Series Identities Involving the Borweins' Cubic Theta Functions

    Directory of Open Access Journals (Sweden)

    Ernest X. W. Xia

    2012-01-01

    Full Text Available Based on the theories of Ramanujan's elliptic functions and the (p, k-parametrization of theta functions due to Alaca et al. (2006, 2007, 2006 we derive certain Eisenstein series identities involving the Borweins' cubic theta functions with the help of the computer. Some of these identities were proved by Liu based on the fundamental theory of elliptic functions and some of them may be new. One side of each identity involves Eisenstein series, the other products of the Borweins' cubic theta functions. As applications, we evaluate some convolution sums. These evaluations are different from the formulas given by Alaca et al.

  17. Regularizing cubic open Neveu-Schwarz string field theory

    International Nuclear Information System (INIS)

    Berkovits, Nathan; Siegel, Warren

    2009-01-01

    After introducing non-minimal variables, the midpoint insertion of Y Y-bar in cubic open Neveu-Schwarz string field theory can be replaced with an operator N ρ depending on a constant parameter ρ. As in cubic open superstring field theory using the pure spinor formalism, the operator N ρ is invertible and is equal to 1 up to a BRST-trivial quantity. So unlike the linearized equation of motion Y Y-bar QV = 0 which requires truncation of the Hilbert space in order to imply QV = 0, the linearized equation N ρ QV = 0 directly implies QV = 0.

  18. 3D confocal imaging in CUBIC-cleared mouse heart

    International Nuclear Information System (INIS)

    Nehrhoff, I.; Bocancea, D.; Vaquero, J.; Vaquero, J.J.; Lorrio, M.T.; Ripoll, J.; Desco, M.; Gomez-Gaviro, M.V.

    2016-01-01

    Acquiring high resolution 3D images of the heart enables the ability to study heart diseases more in detail. Here, the CUBIC (clear, unobstructed brain imaging cocktails and computational analysis) clearing protocol was adapted for thick mouse heart sections to increase the penetration depth of the confocal microscope lasers into the tissue. The adapted CUBIC clearing of the heart lets the antibody penetrate deeper into the tissue by a factor of five. The here shown protocol enables deep 3D highresolution image acquisition in the heart. This allows a much more accurate assessment of the cellular and structural changes that underlie heart diseases. (Author)

  19. Total Positivity of the Cubic Trigonometric Bézier Basis

    Directory of Open Access Journals (Sweden)

    Xuli Han

    2014-01-01

    Full Text Available Within the general framework of Quasi Extended Chebyshev space, we prove that the cubic trigonometric Bézier basis with two shape parameters λ and μ given in Han et al. (2009 forms an optimal normalized totally positive basis for λ,μ∈(-2,1]. Moreover, we show that for λ=-2 or μ=-2 the basis is not suited for curve design from the blossom point of view. In order to compute the corresponding cubic trigonometric Bézier curves stably and efficiently, we also develop a new corner cutting algorithm.

  20. Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing.

    Science.gov (United States)

    Shih, Huan-Yu; Lee, Wei-Hao; Kao, Wei-Chung; Chuang, Yung-Chuan; Lin, Ray-Ming; Lin, Hsin-Chih; Shiojiri, Makoto; Chen, Miin-Jang

    2017-01-03

    Low-temperature epitaxial growth of AlN ultrathin films was realized by atomic layer deposition (ALD) together with the layer-by-layer, in-situ atomic layer annealing (ALA), instead of a high growth temperature which is needed in conventional epitaxial growth techniques. By applying the ALA with the Ar plasma treatment in each ALD cycle, the AlN thin film was converted dramatically from the amorphous phase to a single-crystalline epitaxial layer, at a low deposition temperature of 300 °C. The energy transferred from plasma not only provides the crystallization energy but also enhances the migration of adatoms and the removal of ligands, which significantly improve the crystallinity of the epitaxial layer. The X-ray diffraction reveals that the full width at half-maximum of the AlN (0002) rocking curve is only 144 arcsec in the AlN ultrathin epilayer with a thickness of only a few tens of nm. The high-resolution transmission electron microscopy also indicates the high-quality single-crystal hexagonal phase of the AlN epitaxial layer on the sapphire substrate. The result opens a window for further extension of the ALD applications from amorphous thin films to the high-quality low-temperature atomic layer epitaxy, which can be exploited in a variety of fields and applications in the near future.

  1. Predicted energetics and properties of rare-earth ferrites films grown on cubic (1 1 1)- and hexagonal (0 0 0 1)-oriented substrates

    International Nuclear Information System (INIS)

    Zhao, Hong Jian; Chen, Xiang Ming; Xu, Changsong; Duan, Wenhui; Yang, Yurong; Bellaiche, L

    2015-01-01

    First-principles calculations are performed to compare the energetics of several phases, including hexagonal polar P6 3 cm and perovskite non-polar Pbnm-like states, of epitaxial RFeO 3 films (with R  =  Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er and Lu) grown on different cubic (1 1 1)- and hexagonal (0 0 0 1)-oriented substrates. The P6 3 cm phase is found to be the ground state for large enough in-plane lattice parameters in all investigated RFeO 3 films, and its polarization is tunable by the amount of epitaxial strain. Series of available substrates allowing the growth of hexagonal polar RFeO 3 films, as well as other phenomena of fundamental and technological importance (e.g. different ground states and coexistence between several phases) are also predicted. (paper)

  2. Local lattice environment of indium in GaN, AlN, and InN; Lokale Gitterumgebung von Indium in GaN, AlN und InN

    Energy Technology Data Exchange (ETDEWEB)

    Penner, J

    2007-12-20

    After an introduction to the physical properties of the nitrides, their preparation, and the state of studies on the implantation in the nitrides the experimental method (PAC) applied in this thesis and the data analysis are presented. The next chapter describes then the applied materials and the sample preparation. The following chapters contain the PAC measurements on the annealing behaviout of GaN, AlN, and InN after the implantation as well as dose- and temperature dependent PAC studies. Finally the most important results are summarized.

  3. Specific heat of the simple-cubic Ising model

    NARCIS (Netherlands)

    Feng, X.; Blöte, H.W.J.

    2010-01-01

    We provide an expression quantitatively describing the specific heat of the Ising model on the simple-cubic lattice in the critical region. This expression is based on finite-size scaling of numerical results obtained by means of a Monte Carlo method. It agrees satisfactorily with series expansions

  4. Higher-Order Approximation of Cubic-Quintic Duffing Model

    DEFF Research Database (Denmark)

    Ganji, S. S.; Barari, Amin; Babazadeh, H.

    2011-01-01

    We apply an Artificial Parameter Lindstedt-Poincaré Method (APL-PM) to find improved approximate solutions for strongly nonlinear Duffing oscillations with cubic-quintic nonlinear restoring force. This approach yields simple linear algebraic equations instead of nonlinear algebraic equations...

  5. C2-rational cubic spline involving tension parameters

    Indian Academy of Sciences (India)

    preferred which preserves some of the characteristics of the function to be interpolated. In order to tackle such ... Shape preserving properties of the rational (cubic/quadratic) spline interpolant have been studied ... tension parameters which is used to interpolate the given monotonic data is described in. [6]. Shape preserving ...

  6. Initial post dynamic buckling of a quadratic-cubic column ...

    African Journals Online (AJOL)

    In this investigation, we determine the dynamic buckling load of an imperfect finite column resting on a mixed quadratic-cubic nonlinear elastic foundation trapped by an explicitly time dependent sinusoidally slowly varying dynamic load .The resultant coefficients are dynamically slowly varying and the formulation contains ...

  7. Phonons in face-centred cubic calcium and strontium

    International Nuclear Information System (INIS)

    Singh, S.P.; Rathore, R.P.S.

    1984-01-01

    The axially symmetric and unpaired forces are employed to analyse the phonon dispersion and elastic behaviour of face centred cubic calcium and strontium which have so far not been studied adequately. The model with three parameters predicts the results which agree marvellously with the recently measured data. (author)

  8. One billion cubic meters of gas produced in Kikinda area

    Energy Technology Data Exchange (ETDEWEB)

    Vicicevic, M; Duric, N

    1969-10-01

    The Kikinda gas reservoir has just passed a milestone in producing one billion cubic meters of natural gas. The reservoir was discovered in 1962, and its present production amounts to 26 million cu m. One of the biggest problems was formation of hydrates, which has successfully been solved by using methanol. Four tables show production statistics by years and productive formations.

  9. Physical vapor deposition of cubic boron nitride thin films

    International Nuclear Information System (INIS)

    Kester, D.J.

    1991-01-01

    Cubic boron nitride was successfully deposited using physical vapor-deposition methods. RF-sputtering, magnetron sputtering, dual-ion-beam deposition, and ion-beam-assisted evaporation were all used. The ion-assisted evaporation, using boron evaporation and bombardment by nitrogen and argon ions, led to successful cubic boron nitride growth over the widest and most controllable range of conditions. It was found that two factors were important for c-BN growth: bombardment of the growing film and the presence of argon. A systematic study of the deposition conditions was carried out. It was found that the value of momentum transferred into the growing from by the bombarding ions was critical. There was a very narrow transition range in which mixed cubic and hexagonal phase films were prepared. Momentum-per-atom value took into account all the variables involved in ion-assisted deposition: deposition rate, ion energy, ion flux, and ion species. No other factor led to the same control of the process. The role of temperature was also studied; it was found that at low temperatures only mixed cubic and hexagonal material are deposited

  10. Particle Creation in Oscillating Cavities with Cubic and Cylindrical Geometry

    Science.gov (United States)

    Setare, M. R.; Dinani, H. T.

    2008-04-01

    In the present paper we study the creation of massless scalar particles from the quantum vacuum due to the dynamical Casimir effect by oscillating cavities with cubic and cylindrical geometry. To the first order of the amplitude we derive the expressions for the number of the created particles.

  11. Global Well-Posedness for Cubic NLS with Nonlinear Damping

    KAUST Repository

    Antonelli, Paolo

    2010-11-04

    We study the Cauchy problem for the cubic nonlinear Schrödinger equation, perturbed by (higher order) dissipative nonlinearities. We prove global in-time existence of solutions for general initial data in the energy space. In particular we treat the energy-critical case of a quintic dissipation in three space dimensions. © Taylor & Francis Group, LLC.

  12. Influence of strontium on the cubic to ordered hexagonal phase

    Indian Academy of Sciences (India)

    ... Refresher Courses · Symposia · Live Streaming. Home; Journals; Bulletin of Materials Science; Volume 23; Issue 6. Influence of strontium on the cubic to ordered hexagonal phase transformation in barium magnesium niobate. M Thirumal A K Ganguli. Phase Transitions Volume 23 Issue 6 December 2000 pp 495-498 ...

  13. Exact solutions for the cubic-quintic nonlinear Schroedinger equation

    International Nuclear Information System (INIS)

    Zhu Jiamin; Ma Zhengyi

    2007-01-01

    In this paper, the cubic-quintic nonlinear Schroedinger equation is solved through the extended elliptic sub-equation method. As a consequence, many types of exact travelling wave solutions are obtained which including bell and kink profile solitary wave solutions, triangular periodic wave solutions and singular solutions

  14. Estimating the board foot to cubic foot ratio

    Science.gov (United States)

    Steve P. Verrill; Victoria L. Herian; Henry N. Spelter

    2004-01-01

    Certain issues in recent softwood lumber trade negotiations have centered on the method for converting estimates of timber volumes reported in cubic meters to board feet. Such conversions depend on many factors; three of the most important of these are log length, diameter, and taper. Average log diameters vary by region and have declined in the western United States...

  15. Temperature dependence of critical resolved shear stress for cubic metals

    International Nuclear Information System (INIS)

    Rashid, H.; Fazal-e-Aleem; Ali, M.

    1996-01-01

    The experimental measurements for critical resolved shear stress of various BCC and FCC metals have been explained by using Radiation Model. The temperature dependence of CRSS for different cubic metals is found to the first approximation, to upon the type of the crystal. A good agreement between experimental observations and predictions of the Radiation Model is found. (author)

  16. A Unified Approach to Teaching Quadratic and Cubic Equations.

    Science.gov (United States)

    Ward, A. J. B.

    2003-01-01

    Presents a simple method for teaching the algebraic solution of cubic equations via completion of the cube. Shows that this method is readily accepted by students already familiar with completion of the square as a method for quadratic equations. (Author/KHR)

  17. Tangent Lines without Derivatives for Quadratic and Cubic Equations

    Science.gov (United States)

    Carroll, William J.

    2009-01-01

    In the quadratic equation, y = ax[superscript 2] + bx + c, the equation y = bx + c is identified as the equation of the line tangent to the parabola at its y-intercept. This is extended to give a convenient method of graphing tangent lines at any point on the graph of a quadratic or a cubic equation. (Contains 5 figures.)

  18. Hardness and thermal stability of cubic silicon nitride

    DEFF Research Database (Denmark)

    Jiang, Jianzhong; Kragh, Flemming; Frost, D. J.

    2001-01-01

    The hardness and thermal stability of cubic spinel silicon nitride (c-Si3N4), synthesized under high-pressure and high-temperature conditions, have been studied by microindentation measurements, and x-ray powder diffraction and scanning electron microscopy, respectively The phase at ambient...

  19. Impacts of Thermal Atomic Layer-Deposited AlN Passivation Layer on GaN-on-Si High Electron Mobility Transistors.

    Science.gov (United States)

    Zhao, Sheng-Xun; Liu, Xiao-Yong; Zhang, Lin-Qing; Huang, Hong-Fan; Shi, Jin-Shan; Wang, Peng-Fei

    2016-12-01

    Thermal atomic layer deposition (ALD)-grown AlN passivation layer is applied on AlGaN/GaN-on-Si HEMT, and the impacts on drive current and leakage current are investigated. The thermal ALD-grown 30-nm amorphous AlN results in a suppressed off-state leakage; however, its drive current is unchanged. It was also observed by nano-beam diffraction method that thermal ALD-amorphous AlN layer barely enhanced the polarization. On the other hand, the plasma-enhanced chemical vapor deposition (PECVD)-deposited SiN layer enhanced the polarization and resulted in an improved drive current. The capacitance-voltage (C-V) measurement also indicates that thermal ALD passivation results in a better interface quality compared with the SiN passivation.

  20. Engineering of nearly strain-free ZnO films on Si(1 1 1) by tuning AlN buffer thickness

    International Nuclear Information System (INIS)

    Venkatachalapathy, Vishnukanthan; Galeckas, Augustinas; Lee, In-Hwan; Kuznetsov, Andrej Yu.

    2012-01-01

    ZnO properties were investigated as a function of AlN buffer layer thickness (0–100 nm) in ZnO/AlN/Si(1 1 1) structures grown by metal organic vapor phase epitaxy. A significant improvement of ZnO film crystallinity by tuning AlN buffer thickness was confirmed by x-ray diffraction, topography and photoluminescence measurements. An optimal AlN buffer layer thickness of 50 nm is defined, which allows for growth of nearly strain-free ZnO films. The presence of free excitons at 10 K suggests high crystal quality for all ZnO samples grown on AlN/Si(1 1 1) templates. The intensities of neutral and ionized donor bound exciton lines are found to correlate with the in-plane and out-of-plane strain in the films, respectively.

  1. Growth of GaN on SiC/Si substrates using AlN buffer layer by hot-mesh CVD

    International Nuclear Information System (INIS)

    Tamura, Kazuyuki; Kuroki, Yuichiro; Yasui, Kanji; Suemitsu, Maki; Ito, Takashi; Endou, Tetsuro; Nakazawa, Hideki; Narita, Yuzuru; Takata, Masasuke; Akahane, Tadashi

    2008-01-01

    GaN films were grown on SiC/Si (111) substrates by hot-mesh chemical vapor deposition (CVD) using ammonia (NH 3 ) and trimetylgallium (TMG) under low V/III source gas ratio (NH 3 /TMG = 80). The SiC layer was grown by a carbonization process on the Si substrates using propane (C 3 H 8 ). The AlN layer was deposited as a buffer layer using NH 3 and trimetylaluminum (TMA). GaN films were formed and grown by the reaction between NH x radicals, generated on a tungsten hot mesh, and the TMG molecules. The GaN films with the AlN buffer layer showed better crystallinity and stronger near-band-edge emission compared to those without the AlN layer

  2. Growth of GaN on SiC/Si substrates using AlN buffer layer by hot-mesh CVD

    Energy Technology Data Exchange (ETDEWEB)

    Tamura, Kazuyuki [Nagaoka University of Technology, Nagaoka 940-2188 (Japan)], E-mail: kazuyuki@stn.nagaokaut.ac.jp; Kuroki, Yuichiro; Yasui, Kanji [Nagaoka University of Technology, Nagaoka 940-2188 (Japan); Suemitsu, Maki; Ito, Takashi [Center of Interdisciplinary Research, Tohoku University, Sendai 980-8578 (Japan); Endou, Tetsuro [Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577 (Japan); Nakazawa, Hideki [Faculty of Science and Technology, Hirosaki University, Hirosaki 036-8561 (Japan); Narita, Yuzuru [Center of Interdisciplinary Research, Tohoku University, Sendai 980-8578 (Japan); Takata, Masasuke; Akahane, Tadashi [Nagaoka University of Technology, Nagaoka 940-2188 (Japan)

    2008-01-15

    GaN films were grown on SiC/Si (111) substrates by hot-mesh chemical vapor deposition (CVD) using ammonia (NH{sub 3}) and trimetylgallium (TMG) under low V/III source gas ratio (NH{sub 3}/TMG = 80). The SiC layer was grown by a carbonization process on the Si substrates using propane (C{sub 3}H{sub 8}). The AlN layer was deposited as a buffer layer using NH{sub 3} and trimetylaluminum (TMA). GaN films were formed and grown by the reaction between NH{sub x} radicals, generated on a tungsten hot mesh, and the TMG molecules. The GaN films with the AlN buffer layer showed better crystallinity and stronger near-band-edge emission compared to those without the AlN layer.

  3. Engineering of nearly strain-free ZnO films on Si(1 1 1) by tuning AlN buffer thickness

    Energy Technology Data Exchange (ETDEWEB)

    Venkatachalapathy, Vishnukanthan, E-mail: vishnukanthan.venkatachalapathy@smn.uio.no [Department of Physics/Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, NO-0316 Oslo (Norway); Galeckas, Augustinas [Department of Physics/Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, NO-0316 Oslo (Norway); Lee, In-Hwan [School of Advanced Materials Engineering, Research Centre for Advanced Materials Development (RCAMD), Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Kuznetsov, Andrej Yu. [Department of Physics/Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, NO-0316 Oslo (Norway)

    2012-05-15

    ZnO properties were investigated as a function of AlN buffer layer thickness (0-100 nm) in ZnO/AlN/Si(1 1 1) structures grown by metal organic vapor phase epitaxy. A significant improvement of ZnO film crystallinity by tuning AlN buffer thickness was confirmed by x-ray diffraction, topography and photoluminescence measurements. An optimal AlN buffer layer thickness of 50 nm is defined, which allows for growth of nearly strain-free ZnO films. The presence of free excitons at 10 K suggests high crystal quality for all ZnO samples grown on AlN/Si(1 1 1) templates. The intensities of neutral and ionized donor bound exciton lines are found to correlate with the in-plane and out-of-plane strain in the films, respectively.

  4. The influence of the AlN barrier thickness on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors

    International Nuclear Information System (INIS)

    Lv, Yuanjie; Feng, Zhihong; Gu, Guodong; Han, Tingting; Yin, Jiayun; Liu, Bo; Cai, Shujun; Lin, Zhaojun; Ji, Ziwu; Zhao, Jingtao

    2014-01-01

    The electron mobility scattering mechanisms in AlN/GaN heterostuctures with 3 nm and 6 nm AlN barrier thicknesses were investigated by temperature-dependent Hall measurements. The effect of interface roughness (IFR) scattering on the electron mobility was found to be enhanced by increasing AlN barrier thickness. Moreover, using the measured capacitance-voltage and current-voltage characteristics of the fabricated heterostructure field-effect transistors (HFETs) with different Schottky areas on the two heterostuctures, the variations of electron mobility with different gate biases were investigated. Due to enhanced IFR scattering, the influence of polarization Coulomb field (PCF) scattering on electron mobility was found to decrease with increasing AlN barrier layer thickness. However, the PCF scattering remained an important scattering mechanism in the AlN/GaN HFETs.

  5. Molecular-beam epitaxial growth of insulating AlN on surface-controlled 6H-SiC substrate by HCl gas etching

    International Nuclear Information System (INIS)

    Onojima, Norio; Suda, Jun; Matsunami, Hiroyuki

    2002-01-01

    Insulating AlN layers were grown on surface-controlled 6H-SiC subtrates by molecular-beam epitaxy (MBE) using elemental Al and rf plasma-excited nitrogen (N*). HCl gas etching was introduced as an effective pretreatment method of substrate for MBE growth of AlN. 6H-SiC substrates pretreated by HCl gas etching had no surface polishing scratches and an atomically flat surface. In addition, evident ( 3 √x 3 √)R30 deg. surface reconstruction was observed even before thermal cleaning. AlN layers grown on this substrate had no defects related to surface polishing scratches and excellent insulating characteristics

  6. Cationic Phospholipids Forming Cubic Phases: Lipoplex Structure and Transfection Efficiency

    Energy Technology Data Exchange (ETDEWEB)

    Koynova, Rumiana; Wang, Li; MacDonald, Robert C. (NWU)

    2008-10-29

    The transfection activity and the phase behavior of two novel cationic O-alkyl-phosphatidylcholines, 1,2-dioleoyl-sn-glycero-3-hexylphosphocholine (C6-DOPC) and 1,2-dierucoyl-sn-glycero-3-ethylphosphocholine (di22:1-EPC), have been examined with the aim of more completely understanding the mechanism of lipid-mediated DNA delivery. Both lipids form cubic phases: C6-DOPC in the entire temperature range from -10 to 90 C, while di22:1-EPC exhibits an irreversible lamellar-cubic transition between 50 and 70 C on heating. The lipoplexes formed by C6-DOPC arrange into hexagonal phase, while the lipoplexes of di22:1-EPC are lamellar. Both lipids exhibit lower transfection activity than the lamellar-forming 1,2-dioleoyl-sn-glycero-3-ethylphosphocholine (EDOPC). Thus, for the studied cationic phospholipid-DNA systems, the lipoplex phase state is a factor that does not seem to correlate with transfection activity. The parameter that exhibits better correlation with the transfection activity within the present data set is the phase state of the lipid dispersion prior to the addition of DNA. Thus, the lamellar lipid dispersion (EDOPC) produces more efficient lipoplexes than the dispersion with coexisting lamellar and cubic aggregates (diC22:1-EPC), which is even more efficient than the purely cubic dispersions (C6-DOPC; diC22:1-EPC after heating). It could be inferred from these data and from previous research that cubic phase lipid aggregates are unlikely to be beneficial to transfection. The lack of correlation between the phase state of lipoplexes and their transfection activity observed within the present data set does not mean that lipid phase state is generally unimportant for lipofection: a viewpoint now emerging from our previous studies is that the critical factor in lipid-mediated transfection is the structural evolution of lipoplexes within the cell, upon interacting and mixing with cellular lipids.

  7. Cationic phospholipids forming cubic phases: lipoplex structure and transfection efficiency.

    Science.gov (United States)

    Koynova, Rumiana; Wang, Li; Macdonald, Robert C

    2008-01-01

    The transfection activity and the phase behavior of two novel cationic O-alkyl-phosphatidylcholines, 1,2-dioleoyl- sn-glycero-3-hexylphosphocholine (C6-DOPC) and 1,2-dierucoyl- sn-glycero-3-ethylphosphocholine (di22:1-EPC), have been examined with the aim of more completely understanding the mechanism of lipid-mediated DNA delivery. Both lipids form cubic phases: C6-DOPC in the entire temperature range from -10 to 90 degrees C, while di22:1-EPC exhibits an irreversible lamellar-cubic transition between 50 and 70 degrees C on heating. The lipoplexes formed by C6-DOPC arrange into hexagonal phase, while the lipoplexes of di22:1-EPC are lamellar. Both lipids exhibit lower transfection activity than the lamellar-forming 1,2-dioleoyl- sn-glycero-3-ethylphosphocholine (EDOPC). Thus, for the studied cationic phospholipid-DNA systems, the lipoplex phase state is a factor that does not seem to correlate with transfection activity. The parameter that exhibits better correlation with the transfection activity within the present data set is the phase state of the lipid dispersion prior to the addition of DNA. Thus, the lamellar lipid dispersion (EDOPC) produces more efficient lipoplexes than the dispersion with coexisting lamellar and cubic aggregates (diC22:1-EPC), which is even more efficient than the purely cubic dispersions (C6-DOPC; diC22:1-EPC after heating). It could be inferred from these data and from previous research that cubic phase lipid aggregates are unlikely to be beneficial to transfection. The lack of correlation between the phase state of lipoplexes and their transfection activity observed within the present data set does not mean that lipid phase state is generally unimportant for lipofection: a viewpoint now emerging from our previous studies is that the critical factor in lipid-mediated transfection is the structural evolution of lipoplexes within the cell, upon interacting and mixing with cellular lipids.

  8. INVESTIGATION OF CURVES SET BY CUBIC DISTRIBUTION OF CURVATURE

    Directory of Open Access Journals (Sweden)

    S. A. Ustenko

    2014-03-01

    Full Text Available Purpose. Further development of the geometric modeling of curvelinear contours of different objects based on the specified cubic curvature distribution and setpoints of curvature in the boundary points. Methodology. We investigate the flat section of the curvilinear contour generating under condition that cubic curvature distribution is set. Curve begins and ends at the given points, where angles of tangent slope and curvature are also determined. It was obtained the curvature equation of this curve, depending on the section length and coefficient c of cubic curvature distribution. The analysis of obtained equation was carried out. As well as, it was investigated the conditions, in which the inflection points of the curve are appearing. One should find such an interval of parameter change (depending on the input data and the section length, in order to place the inflection point of the curvature graph outside the curve section borders. It was determined the dependence of tangent slope of angle to the curve at its arbitrary point, as well as it was given the recommendations to solve a system of integral equations that allow finding the length of the curve section and the coefficient c of curvature cubic distribution. Findings. As the result of curves research, it is found that the criterion for their selection one can consider the absence of inflection points of the curvature on the observed section. Influence analysis of the parameter c on the graph of tangent slope angle to the curve showed that regardless of its value, it is provided the same rate of angle increase of tangent slope to the curve. Originality. It is improved the approach to geometric modeling of curves based on cubic curvature distribution with its given values at the boundary points by eliminating the inflection points from the observed section of curvilinear contours. Practical value. Curves obtained using the proposed method can be used for geometric modeling of curvilinear

  9. Growth and characterization of a-axis oriented Cr-doped AlN films by DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Panda, Padmalochan; Ramaseshan, R., E-mail: seshan@igcar.gov.in; Dash, S. [Materials Science Group, IGCAR, Kalpakkam, 603102 (India); Krishna, Nanda Gopala [Corrosion Science and Technology Group, IGCAR, Kalpakkam, 603102 (India)

    2016-05-23

    Wurtzite type Cr-doped AlN thin films were grown on Si (100) substrates using DC reactive magnetron sputtering with a function of N{sub 2} concentration (15 to 25%). Evolution of crystal structure of these films was studied by GIXRD where a-axis preferred orientation was observed. The electronic binding energy and concentration of Cr in these films were estimated by X-ray photoemission spectroscopy (XPS). We have observed indentation hardness (H{sub IT}) of around 28.2 GPa for a nitrogen concentration of 25%.

  10. Catalytic effect of Al and AlN interlayer on the growth and properties of containing carbon films

    International Nuclear Information System (INIS)

    Zhou, Bing; Liu, Zhubo; Tang, Bin; Rogachev, A.V.

    2015-01-01

    Highlights: • DLC and CN x bilayers with Al (AlN) interlayer were fabricated by cathode arc technique. • Complete diffusion of Al and C atoms occurs at the interface of Al/DLC (CN x ) bilayer. • Al/CN x bilayer presents a higher content of Csp 3 /Csp 2 bonds. • The hardness of Al/DLC bilayer decreases but increases for the other bilayers. • Morphology of the bilayers was explained by growth mechanism of DLC and surface state of substrate. - Abstract: Diamond-like carbon (DLC) and carbon nitride (CN x ) bilayer films with Al and AlN interlayer were fabricated by pulse cathode arc technique. The structure, composition, morphology and mechanical properties of the films were investigated by Raman, Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), Knoop sclerometer and surface profilometer. The results indicated that the complete diffusion between C and Al atoms occurs in the Al/DLC and Al/CN x bilayer. Al interlayer induces the increase of the size and ordering of Csp 2 clusters in the films but AlN interlayer increases the disordering degree of Csp 2 clusters. XPS results showed that a higher content of Csp 3 /Csp 2 bonds presents in the Al/CN x bilayer, and Al and AlN interlayer decreases the atomic ratio of N/C. AFM with phase contrast mode illustrated the morphologic characteristics of the bilayer films. All the bilayers show a nano-structural surface. The morphology changes of the bilayer were well explained by the surface state of the substrate and the growth mechanism of DLC films. The hardness of Al/DLC bilayer decreases but it increases for the other bilayers compared to the corresponding DLC (CN x ) monolayer. The internal stress of the bilayer is significantly lower than that of the monolayer except for the AlN/CN x bilayer. These studies could make the difference at the time of choosing a suitable functional film for certain application

  11. High energy ion irradiated III-N semiconductors (AlN, GaN, InN): study of point defect and extended defect creation

    International Nuclear Information System (INIS)

    Sall, Mamour

    2013-01-01

    Nitride semiconductors III N (AlN, GaN, InN) have interesting properties for micro-and opto-electronic applications. In use, they may be subjected to different types of radiation in a wide range of energy. In AlN, initially considered insensitive to electronic excitations (Se), we have demonstrated a novel type of synergy between Se and nuclear collisions (Sn) for the creation of defects absorbing at 4.7 eV. In addition, another effect of Se is highlighted in AlN: climb of screw dislocations under the influence of Se, at high fluence. In GaN, two mechanisms can explain the creation of defects absorbing at 2.8 eV: a synergy between Se and Sn, or a creation only due to Sn but with a strong effect of the size of displacement cascades. The study, by TEM, of the effects of Se in the three materials, exhibits behaviors highly dependent on the material while they all belong to the same family with the same atomic structure. Under monoatomic ion irradiations (velocity between 0.4 and 5 MeV/u), while discontinuous tracks are observed in GaN and InN, no track is observed in AlN with the highest electronic stopping power (33 keV/nm). Only fullerene clusters produce tracks in AlN. The inelastic thermal spike model was used to calculate the energies required to produce track in AlN, GaN and InN, they are 4.2 eV/atom, 1.5 eV/atom and 0.8 eV/atom, respectively. This sensitivity difference according to Se, also occurs at high fluence. (author)

  12. Investigation of AlN films grown by molecular beam epitaxy on vicinal Si(111) as templates for GaN quantum dots

    International Nuclear Information System (INIS)

    Benaissa, M.; Vennegues, P.; Tottereau, O.; Nguyen, L.; Semond, F.

    2006-01-01

    The use of AlN epitaxial films deposited on vicinal Si(111) as templates for the growth of GaN quantum dots is investigated by transmission electron microscopy and atomic force microscopy. It is found that the substrate vicinality induces both a slight tilt of the AlN (0001) direction with respect to the [111] direction and a step bunching mechanism. As a consequence, a dislocation dragging behavior is observed giving rise to dislocation-free areas well suited for the nucleation of GaN quantum dots

  13. Characterization of a smartphone size haptic rendering system based on thin-film AlN actuators on glass substrates

    Science.gov (United States)

    Bernard, F.; Casset, F.; Danel, J. S.; Chappaz, C.; Basrour, S.

    2016-08-01

    This paper presents for the first time the characterization of a smartphone-size haptic rendering system based on the friction modulation effect. According to previous work and finite element modeling, the homogeneous flexural modes are needed to get the haptic feedback effect. The device studied consists of a thin film AlN transducers deposited on an 110  ×  65 mm2 glass substrate. The transducer’s localization on the glass plate allows a transparent central area of 90  ×  49 mm2. Electrical and mechanical parameters of the system are extracted from measurement. From this extraction, the electrical impedance matching reduced the applied voltage to 17.5 V AC and the power consumption to 1.53 W at the resonance frequency of the vibrating system to reach the haptic rendering specification. Transient characterizations of the actuation highlight a delay under the dynamic tactile detection. The characterization of the AlN transducers used as sensors, including the noise rejection, the delay or the output charge amplitude allows detections with high accuracy of any variation due to external influences. Those specifications are the first step to a low-power-consumption feedback-looped system.

  14. Characterization of a smartphone size haptic rendering system based on thin-film AlN actuators on glass substrates

    International Nuclear Information System (INIS)

    Bernard, F; Basrour, S; Casset, F; Danel, J S; Chappaz, C

    2016-01-01

    This paper presents for the first time the characterization of a smartphone-size haptic rendering system based on the friction modulation effect. According to previous work and finite element modeling, the homogeneous flexural modes are needed to get the haptic feedback effect. The device studied consists of a thin film AlN transducers deposited on an 110  ×  65 mm 2 glass substrate. The transducer’s localization on the glass plate allows a transparent central area of 90  ×  49 mm 2 . Electrical and mechanical parameters of the system are extracted from measurement. From this extraction, the electrical impedance matching reduced the applied voltage to 17.5 V AC and the power consumption to 1.53 W at the resonance frequency of the vibrating system to reach the haptic rendering specification. Transient characterizations of the actuation highlight a delay under the dynamic tactile detection. The characterization of the AlN transducers used as sensors, including the noise rejection, the delay or the output charge amplitude allows detections with high accuracy of any variation due to external influences. Those specifications are the first step to a low-power-consumption feedback-looped system. (paper)

  15. The Variations of Thermal Contact Resistance and Heat Transfer Rate of the AlN Film Compositing with PCM

    Directory of Open Access Journals (Sweden)

    Huann-Ming Chou

    2015-01-01

    Full Text Available The electrical industries have been fast developing over the past decades. Moreover, the trend of microelements and packed division multiplex is obviously for the electrical industry. Hence, the high heat dissipative and the electrical insulating device have been popular and necessary. The thermal conduct coefficient of aluminum nitride (i.e., AlN is many times larger than the other materials. Moreover, the green technology of composite with phase change materials (i.e., PCMs is worked as a constant temperature cooler. Therefore, PCMs have been used frequently for saving energy and the green environment. Based on the above statements, it does show great potential in heat dissipative for the AlN film compositing with PCM. Therefore, this paper is focused on the research of thermal contact resistance and heat transfer between the AlN/PCM pairs. According to the experimental results, the heat transfer decreases and the thermal contact resistance increases under the melting process of PCM. However, the suitable parameters such as contact pressures can be used to improve the above defects.

  16. Frequency response improvement of a two-port surface acoustic wave device based on epitaxial AlN thin film

    Science.gov (United States)

    Gao, Junning; Hao, Zhibiao; Luo, Yi; Li, Guoqiang

    2018-01-01

    This paper presents an exploration on improving the frequency response of the symmetrical two-port AlN surface acoustic wave (SAW) device, using epitaxial AlN thin film on (0001) sapphire as the piezoelectric substrate. The devices were fabricated by lift-off processes with Ti/Al composite electrodes as interleaved digital transducers (IDT). The impact of DL and the number of the IDT finger pairs on the frequency response was carefully investigated. The overall properties of the device are found to be greatly improved with DL elongation, indicated by the reduced pass band ripple and increased stop band rejection ratio. The rejection increases by 8.3 dB when DL elongates from 15.5λ to 55.5λ and 4.4 dB further accompanying another 50λ elongation. This is because larger DL repels the stray acoustic energy out of the propagation path and provides a cleaner traveling channel for functional SAW, and at the same time restrains electromagnetic feedthrough. It is also found that proper addition of the IDT finger pairs is beneficial for the device response, indicated by the ripple reduction and the insertion loss drop.

  17. Effect of Ga2O3 addition on the properties of Y2O3-doped AlN ceramics

    Directory of Open Access Journals (Sweden)

    Shin H.

    2015-01-01

    Full Text Available Effect Ga2O3 addition on the densification and properties of Y2O3-doped AlN ceramics was investigated under the constraint of total sintering additives (Y2O3 and Ga2O3 of 4.5 wt%. Ga was detected in the AlN grain as well as the grain boundary phases. YAlO3 and Y4Al2O9 were observed as the secondary crystalline phases in all of the investigated compositions. As the substitution of Ga2O3 for Y2O3 increased, the quantity of the Y4Al2O9 phase decreased while that of YAlO3 was more or less similar. Neither additional secondary phases was identified, nor was the sinterability inhibited by the Ga2O3 addition; the linear shrinkage and apparent density were above 20 percent and 3.34-3.37 g/cm3, respectively. However, the optical reflectance and the elastic modulus generally decreased whereas the Poisson ratio increased significantly. The dielectric constant and the loss tangent of 4.0Y2O3-0.5Ga2O3-95.5Y2O3 at the resonant frequency of 8.22 GHz were 8.63 and 0.003, respectively.

  18. High temperature electron cyclotron resonance etching of GaN, InN, and AlN

    International Nuclear Information System (INIS)

    Shul, R.J.; Kilcoyne, S.P.; Hagerott Crawford, M.; Parmeter, J.E.; Vartuli, C.B.; Abernathy, C.R.; Pearton, S.J.

    1995-01-01

    Electron cyclotron resonance etch rates for GaN, InN, and AlN are reported as a function of temperature for Cl 2 /H 2 /CH 4 /Ar and Cl 2 /H 2 /Ar plasmas. Using Cl 2 /H 2 /CH 4 /Ar plasma chemistry, GaN etch rates remain relatively constant from 30 to 125 degree C and then increase to a maximum of 2340 A/min at 170 degree C. The InN etch rate decreases monotonically from 30 to 150 degree C and then rapidly increases to a maximum of 2300 A/min at 170 degree C. This is the highest etch rate reported for this material. The AlN etch rate decreases throughout the temperature range studied with a maximum of 960 A/min at 30 degree C. When CH 4 is removed from the plasma chemistry, the GaN and InN etch rates are slightly lower, with less dramatic changes with temperature. The surface composition of the III--V nitrides remains unchanged after exposure to the Cl 2 /H 2 /CH 4 /Ar plasma over the temperatures studied

  19. Point-Defect Nature of the Ultraviolet Absorption Band in AlN

    Science.gov (United States)

    Alden, D.; Harris, J. S.; Bryan, Z.; Baker, J. N.; Reddy, P.; Mita, S.; Callsen, G.; Hoffmann, A.; Irving, D. L.; Collazo, R.; Sitar, Z.

    2018-05-01

    We present an approach where point defects and defect complexes are identified using power-dependent photoluminescence excitation spectroscopy, impurity data from SIMS, and density-functional-theory (DFT)-based calculations accounting for the total charge balance in the crystal. Employing the capabilities of such an experimental computational approach, in this work, the ultraviolet-C absorption band at 4.7 eV, as well as the 2.7- and 3.9-eV luminescence bands in AlN single crystals grown via physical vapor transport (PVT) are studied in detail. Photoluminescence excitation spectroscopy measurements demonstrate the relationship between the defect luminescent bands centered at 3.9 and 2.7 eV to the commonly observed absorption band centered at 4.7 eV. Accordingly, the thermodynamic transition energy for the absorption band at 4.7 eV and the luminescence band at 3.9 eV is estimated at 4.2 eV, in agreement with the thermodynamic transition energy for the CN- point defect. Finally, the 2.7-eV PL band is the result of a donor-acceptor pair transition between the VN and CN point defects since nitrogen vacancies are predicted to be present in the crystal in concentrations similar to carbon-employing charge-balance-constrained DFT calculations. Power-dependent photoluminescence measurements reveal the presence of the deep donor state with a thermodynamic transition energy of 5.0 eV, which we hypothesize to be nitrogen vacancies in agreement with predictions based on theory. The charge state, concentration, and type of impurities in the crystal are calculated considering a fixed amount of impurities and using a DFT-based defect solver, which considers their respective formation energies and the total charge balance in the crystal. The presented results show that nitrogen vacancies are the most likely candidate for the deep donor state involved in the donor-acceptor pair transition with peak emission at 2.7 eV for the conditions relevant to PVT growth.

  20. Plasma simulation with the Differential Algebraic Cubic Interpolated Propagation scheme

    Energy Technology Data Exchange (ETDEWEB)

    Utsumi, Takayuki [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment

    1998-03-01

    A computer code based on the Differential Algebraic Cubic Interpolated Propagation scheme has been developed for the numerical solution of the Boltzmann equation for a one-dimensional plasma with immobile ions. The scheme advects the distribution function and its first derivatives in the phase space for one time step by using a numerical integration method for ordinary differential equations, and reconstructs the profile in phase space by using a cubic polynomial within a grid cell. The method gives stable and accurate results, and is efficient. It is successfully applied to a number of equations; the Vlasov equation, the Boltzmann equation with the Fokker-Planck or the Bhatnagar-Gross-Krook (BGK) collision term and the relativistic Vlasov equation. The method can be generalized in a straightforward way to treat cases such as problems with nonperiodic boundary conditions and higher dimensional problems. (author)

  1. Highly Aminated Mesoporous Silica Nanoparticles with Cubic Pore Structure

    KAUST Repository

    Suteewong, Teeraporn

    2011-01-19

    Mesoporous silica with cubic symmetry has attracted interest from researchers for some time. Here, we present the room temperature synthesis of mesoporous silica nanoparticles possessing cubic Pm3n symmetry with very high molar ratios (>50%) of 3-aminopropyl triethoxysilane. The synthesis is robust allowing, for example, co-condensation of organic dyes without loss of structure. By means of pore expander molecules, the pore size can be enlarged from 2.7 to 5 nm, while particle size decreases. Adding pore expander and co-condensing fluorescent dyes in the same synthesis reduces average particle size further down to 100 nm. After PEGylation, such fluorescent aminated mesoporous silica nanoparticles are spontaneously taken up by cells as demonstrated by fluorescence microscopy.

  2. Polarization Change in Face-Centered Cubic Opal Films

    Science.gov (United States)

    Wolff, Christian; Romanov, Sergei; Küchenmeister, Jens; Peschel, Ulf; Busch, Kurt

    2011-10-01

    Artificial opals are a popular platform for investigating fundamental properties of Photonic Crystals (PhC). In this work, we provide a theoretical analysis of polarization-resolved transmission experiments through thin opal films. Despite the full cubic symmetry of the PhC, this system provides a very efficient mechanism for manipulating the polarization state of light. Based on band structure calculations and Bloch mode analysis, we find that this effect closely resembles classical birefringence. Due to the cubic symmetry, however, a description using tensorial quantities is not possible. This indicates fundamental limitations of effective material models for Photonic Crystals and demonstrates the importance of accurately modelling the microscopic geometry of such systems.

  3. Highly Aminated Mesoporous Silica Nanoparticles with Cubic Pore Structure

    KAUST Repository

    Suteewong, Teeraporn; Sai, Hiroaki; Cohen, Roy; Wang, Suntao; Bradbury, Michelle; Baird, Barbara; Gruner, Sol M.; Wiesner, Ulrich

    2011-01-01

    Mesoporous silica with cubic symmetry has attracted interest from researchers for some time. Here, we present the room temperature synthesis of mesoporous silica nanoparticles possessing cubic Pm3n symmetry with very high molar ratios (>50%) of 3-aminopropyl triethoxysilane. The synthesis is robust allowing, for example, co-condensation of organic dyes without loss of structure. By means of pore expander molecules, the pore size can be enlarged from 2.7 to 5 nm, while particle size decreases. Adding pore expander and co-condensing fluorescent dyes in the same synthesis reduces average particle size further down to 100 nm. After PEGylation, such fluorescent aminated mesoporous silica nanoparticles are spontaneously taken up by cells as demonstrated by fluorescence microscopy.

  4. Trace spaces in a pre-cubical complex

    DEFF Research Database (Denmark)

    Raussen, Martin

    2009-01-01

    In directed algebraic topology, directed irreversible (d)-paths and spaces consisting of d-paths are studied from a topological and from a categorical point of view. Motivated by models for concurrent computation, we study in this paper spaces of d-paths in a pre-cubical complex. Such paths...... are equipped with a natural arc length which moreover is shown to be invariant under directed homotopies. D-paths up to reparametrization (called traces) can thus be represented by arc length parametrized d-paths. Under weak additional conditions, it is shown that trace spaces in a pre-cubical complex...... are separable metric spaces which are locally contractible and locally compact. Moreover, they have the homotopy type of a CW-complex....

  5. A local cubic smoothing in an adaptation mode

    International Nuclear Information System (INIS)

    Dikoussar, N.D.

    2001-01-01

    A new approach to a local curve approximation and the smoothing is proposed. The relation between curve points is defined using a special cross-ratio weight functions. The coordinates of three curve points are used as parameters for both the weight functions and the tree-point cubic model (TPS). A very simple in computing and stable to random errors cubic smoother in an adaptation mode (LOCUS) is constructed. The free parameter of TPS is estimated independently of the fixed parameters by recursion with the effective error suppression and can be controlled by the cross-ratio parameters. Efficiency and the noise stability of the algorithm are confirmed by examples and by comparison with other known non-parametric smoothers

  6. 3D Medical Image Interpolation Based on Parametric Cubic Convolution

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    In the process of display, manipulation and analysis of biomedical image data, they usually need to be converted to data of isotropic discretization through the process of interpolation, while the cubic convolution interpolation is widely used due to its good tradeoff between computational cost and accuracy. In this paper, we present a whole concept for the 3D medical image interpolation based on cubic convolution, and the six methods, with the different sharp control parameter, which are formulated in details. Furthermore, we also give an objective comparison for these methods using data sets with the different slice spacing. Each slice in these data sets is estimated by each interpolation method and compared with the original slice using three measures: mean-squared difference, number of sites of disagreement, and largest difference. According to the experimental results, we present a recommendation for 3D medical images under the different situations in the end.

  7. Perfect 3-colorings of the cubic graphs of order 10

    Directory of Open Access Journals (Sweden)

    Mehdi Alaeiyan

    2017-10-01

    Full Text Available Perfect coloring is a generalization of the notion of completely regular codes, given by Delsarte. A perfect m-coloring of a graph G with m colors is a partition of the vertex set of G into m parts A_1, A_2, ..., A_m such that, for all $ i,j \\in \\lbrace 1, ... , m \\rbrace $, every vertex of A_i is adjacent to the same number of vertices, namely, a_{ij} vertices, of A_j. The matrix $A=(a_{ij}_{i,j\\in \\lbrace 1,... ,m\\rbrace }$, is called the parameter matrix. We study the perfect 3-colorings (also known as the equitable partitions into three parts of the cubic graphs of order 10. In particular, we classify all the realizable parameter matrices of perfect 3-colorings for the cubic graphs of order 10.

  8. Global Sufficient Optimality Conditions for a Special Cubic Minimization Problem

    Directory of Open Access Journals (Sweden)

    Xiaomei Zhang

    2012-01-01

    Full Text Available We present some sufficient global optimality conditions for a special cubic minimization problem with box constraints or binary constraints by extending the global subdifferential approach proposed by V. Jeyakumar et al. (2006. The present conditions generalize the results developed in the work of V. Jeyakumar et al. where a quadratic minimization problem with box constraints or binary constraints was considered. In addition, a special diagonal matrix is constructed, which is used to provide a convenient method for justifying the proposed sufficient conditions. Then, the reformulation of the sufficient conditions follows. It is worth noting that this reformulation is also applicable to the quadratic minimization problem with box or binary constraints considered in the works of V. Jeyakumar et al. (2006 and Y. Wang et al. (2010. Finally some examples demonstrate that our optimality conditions can effectively be used for identifying global minimizers of the certain nonconvex cubic minimization problem.

  9. Epitaxial AlN layers on sapphire and diamond; Epitaktische AlN-Schichten auf Saphir und Diamant

    Energy Technology Data Exchange (ETDEWEB)

    Hermann, Martin

    2009-04-27

    In this work, epitaxial AlN layers deposited by molecular beam epitaxy on sapphire and diamond substrates were investigated. Starting from this AlN, the dopant silicon was added. The influence of the silicon doping on the structural properties of the host AlN crystal was investigated using high resolution X-ray diffraction. Once the silicon concentration exceeds 1 x 10{sup 19} cm{sup -3}, a significant change of the AlN:Si crystal can be observed: increasing the silicon concentration up to 5 x 10{sup 20} cm{sup -3} results in a decrease of the a lattice parameter by approximately 1.2 pm and an increase of the c lattice parameter by about 1.0 pm. The crystal is stressed additionally by adding silicon resulting in a increase of the biaxial compressive stress of up to 2.0 GPa. Further increase of the silicon concentration leads to lattice relaxation. This result from X-ray diffraction was independently confirmed by Raman spectroscopy investigations. Further increase of the silicon concentration leads to the generation of polycrystalline phases within the epitaxial layer. XTEM measurements detected these polycrystalline phases. In addition, XTEM investigations confirmed also the increase of the lateral crystal size with increasing silicon concentration, as well as a great reduction of the screw dislocation density by more than one order of magnitude as found by X-ray diffraction: in undoped, nitrogen rich grown AlN layers the screw dislocation density is about 3 x 10{sup 8} cm{sup -2}, while AlN layers with a silicon concentration of 5 x 10{sup 20} cm{sup -3} show a screw dislocation density of only 1 x 10{sup 7} cm{sup -2}. In low-doped AlN:Si ([Si]{approx}2 x 10{sup 19} cm{sup -3}) the activation energy of the electronic conductivity is about 250 meV. Increasing the silicon concentration to about 1 x 10{sup 21} cm{sup -3} leads to an increase of the activation energy up to more than 500 meV in the now much more stressed AlN:Si epilayer. Studies of the absorption

  10. Magnetic ground states in nanocuboids of cubic magnetocrystalline anisotropy

    Energy Technology Data Exchange (ETDEWEB)

    Bonilla, F.J., E-mail: fbonilla@cicenergigune.com; Lacroix, L.-M.; Blon, T., E-mail: thomas.blon@insa-toulouse.fr

    2017-04-15

    Flower and easy-axis vortex states are well-known magnetic configurations that can be stabilized in small particles. However, <111> vortex (V<111>), i.e. a vortex state with its core axis along the hard-axis direction, has been recently evidenced as a stable configuration in Fe nanocubes of intermediate sizes in the flower/vortex transition. In this context, we present here extensive micromagnetic simulations to determine the different magnetic ground states in ferromagnetic nanocuboids exhibiting cubic magnetocrystalline anisotropy (MCA). Focusing our study in the single-domain/multidomain size range (10–50 nm), we showed that V<111> is only stable in nanocuboids exhibiting peculiar features, such as a specific size, shape and magnetic environment, contrarily to the classical flower and easy-axis vortex states. Thus, to track experimentally these V<111> states, one should focused on (i) nanocuboids exhibiting a nearly perfect cubic shape (size distorsion <12%) made of (ii) a material which combines a zero or positive MCA and a high saturation magnetization, such as Fe or FeCo; and (iii) a low magnetic field environment, V<111> being only observed in virgin or remanent states. - Highlights: • The <111> vortex is numerically determined in nanocubes of cubic anisotropy. • It constitutes an intermediate state in the single-domain limit. • Such a vortex can only be stabilized in perfect or slightly deformed nanocuboids. • It exists in nanocuboids made of materials with zero or positive cubic anisotropy. • The associated magnetization reversal is described by a rotation of the vortex axis.

  11. Synthesis and Optical Properties of Cubic Gold Nanoframes

    OpenAIRE

    Au, Leslie; Chen, Yeechi; Zhou, Fei; Camargo, Pedro H. C.; Lim, Byungkwon; Li, Zhi-Yuan; Ginger, David S.; Xia, Younan

    2008-01-01

    This paper describes a facile method of preparing cubic Au nanoframes with open structures via the galvanic replacement reaction between Ag nanocubes and AuCl2−. A mechanistic study of the reaction revealed that the formation of Au nanoframes relies on the diffusion of both Au and Ag atoms. The effect of the edge length and ridge thickness of the nanoframes on the localized surface plasmon resonance peak was explored by a combination of discrete dipole approximation calculations and single na...

  12. Orientational anharmonicity of interatomic interaction in cubic monocrystals

    International Nuclear Information System (INIS)

    Belomestnykh, Vladimir N.; Tesleva, Elena P.

    2010-01-01

    Anharmonicity of interatomic interaction from a position of physical acoustics under the standard conditions is investigated. It is shown that the measure of anharmonicity of interatomic interaction (Grilneisen parameter) is explicitly expressed through velocities of sound. Calculation results of orientation anharmonicity are shown on the example of 116 cubic monocrystals with different lattice structural type and type of chemical bond. Two types of anharmonicity interatomic interaction anisotropy are determined. Keywords: acoustics, orientational anharmonicity, Gruneisen parameter, velocity of sound

  13. Light scattering by cubical particle in the WKB approximation

    Directory of Open Access Journals (Sweden)

    redouane lamsoudi

    2017-11-01

    Full Text Available In this work, we determined the analytical expressions of the form factor of a cubical particle in the WKB approximation. We adapted some variables (size parameter, refractive index, the scattering angle and found the form factor in the approximation of Rayleigh-Gans-Debye (RGD, Anomalous Diffraction (AD, and determined the efficiency factor of the extinction. Finally, to illustrate our formalism, we analyzed some numerical examples

  14. Bifurcation of rupture path by linear and cubic damping force

    Science.gov (United States)

    Dennis L. C., C.; Chew X., Y.; Lee Y., C.

    2014-06-01

    Bifurcation of rupture path is studied for the effect of linear and cubic damping. Momentum equation with Rayleigh factor was transformed into ordinary differential form. Bernoulli differential equation was obtained and solved by the separation of variables. Analytical or exact solutions yielded the bifurcation was visible at imaginary part when the wave was non dispersive. For the dispersive wave, bifurcation of rupture path was invisible.

  15. Dry Powder Precursors of Cubic Liquid Crystalline Nanoparticles (cubosomes)

    International Nuclear Information System (INIS)

    Spicer, Patrick T.; Small, William B.; Small, William B.; Lynch, Matthew L.; Burns, Janet L.

    2002-01-01

    Cubosomes are dispersed nanostructured particles of cubic phase liquid crystal that have stimulated significant research interest because of their potential for application in controlled-release and drug delivery. Despite the interest, cubosomes can be difficult to fabricate and stabilize with current methods. Most of the current work is limited to liquid phase processes involving high shear dispersion of bulk cubic liquid crystalline material into sub-micron particles, limiting application flexibility. In this work, two types of dry powder cubosome precursors are produced by spray-drying: (1) starch-encapsulated monoolein is produced by spray-drying a dispersion of cubic liquid crystalline particles in an aqueous starch solution and (2) dextran-encapsulated monoolein is produced by spray-drying an emulsion formed by the ethanol-dextran-monoolein-water system. The encapsulants are used to decrease powder cohesion during drying and to act as a soluble colloidal stabilizer upon hydration of the powders. Both powders are shown to form (on average) 0.6 μm colloidally-stable cubosomes upon addition to water. However, the starch powders have a broader particle size distribution than the dextran powders because of the relative ease of spraying emulsions versus dispersions. The developed processes enable the production of nanostructured cubosomes by end-users rather than just specialized researchers and allow tailoring of the surface state of the cubosomes for broader application

  16. Dispersion properties and low infrared optical losses in epitaxial AlN on sapphire substrate in the visible and infrared range

    Czech Academy of Sciences Publication Activity Database

    Soltani, A.; Stolz, A.; Charrier, J.; Mattalah, M.; Gerbedoen, J.-C.; Barkad, H.A.; Mortet, Vincent; Rousseau, M.; Bourzgui, N.; BenMoussa, A.; De Jaeger, J.-C.

    2014-01-01

    Roč. 115, č. 16 (2014), "163515-1"-"163515-6" ISSN 0021-8979 Institutional support: RVO:68378271 Keywords : III-V semiconductors * AlN films * surface scattering * refractive index * optical properties Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.183, year: 2014

  17. The temperature dependence of the Young's modulus of MgSiN2, AlN and Si3N4

    NARCIS (Netherlands)

    Bruls, R.J.; Hintzen, H.T.J.M.; With, de G.; Metselaar, R.

    2001-01-01

    The temperature dependence of the Young's modulus of MgSiN2 and AlN was measured between 293 and 973 K using the impulse excitation method and compared with literature data reported for Si3N4. The data could be fitted with . The values of the fitting parameters E0 and T0 are related to the Debye

  18. A first-principles study of the SCN− chemisorption on the surface of AlN, AlP, and BP nanotubes

    International Nuclear Information System (INIS)

    Soltani, Alireza; Taghartapeh, Mohammad Ramezani; Mighani, Hossein; Pahlevani, Amin Allah; Mashkoor, Reza

    2012-01-01

    Graphical abstract: Adsorption properties of SCN − on AlN, AlP, and BP nanotubes based on density functional theory. ▶ We demonstrate the most stable configurations (N-side) of SCN − on AlN, AlP, and BP nanotubes models. Highlights: ► The SCN − Adsorption on surface of AlN, AlP, and BP nanotubes were studied via density functional theory (DFT). ► The interaction of SCN − on the electronic properties and the NBO charge distribution of mentioned configurations are investigated. ► The studies suggest that the adsorption energies of SCN − on AlPNT is most notable in comparison with AlNNT and BPNT. - Abstract: We have performed first-principles calculations to explore the adsorption behavior of the SCN − on electronic properties of AlN, AlP, and BP nanotubes. The adsorption value of SCN − for the most stable formation on the AlPNT is about −318.16 kJ mol −1 , which is reason via the chemisorptions of SCN anion. The computed density of states (DOS) indicates that a notable orbital hybridization take place between SCN − and AlP nanotube in adsorption process. Finally, the AlP nanotube can be used to design as useful sensor for nanodevice applications.

  19. Microstructural analysis in the depth direction of a heteroepitaxial AlN thick film grown on a trench-patterned template by nanobeam X-ray diffraction

    Science.gov (United States)

    Shida, K.; Takeuchi, S.; Tohei, T.; Miyake, H.; Hiramatsu, K.; Sumitani, K.; Imai, Y.; Kimura, S.; Sakai, A.

    2018-04-01

    This work quantitatively assessed the three-dimensional distribution of crystal lattice distortions in an epitaxial AlN thick film grown on a trench-patterned template, using nanobeam X-ray diffraction. Position-dependent ω-2θ-φ mapping clearly demonstrated local tilting, spacing and twisting of lattice planes as well as fluctuations in these phenomena on a sub-micrometer scale comparable to the pitch of the trench-and-terrace patterning. Analysis of the crystal lattice distortion in the depth direction was performed using a newly developed method in which the X-ray nanobeam diffracted from the sample surface to specific depths can be selectively detected by employing a Pt wire profiler. This technique generated depth-resolved ω-2θ-φ maps confirming that fluctuations in lattice plane tilting and spacing greatly depend on the dislocation distribution and the history of the AlN epitaxial growth on the trench-patterned structure. It was also found that both fluctuations were reduced on approaching the AlN surface and, in particular, were sharply reduced at specific depths in the terrace regions. These sharp reductions are attributed to the formation of sacrificial zones with degraded crystal quality around the trenches and possibly lead to raising the crystal quality near the surface of the AlN film.

  20. Efficient Reservoir Simulation with Cubic Plus Association and Cross-Association Equation of State for Multicomponent Three-Phase Compressible Flow with Applications in CO2 Storage and Methane Leakage

    Science.gov (United States)

    Moortgat, J.

    2017-12-01

    We present novel simulation tools to model multiphase multicomponent flow and transport in porous media for mixtures that contain non-polar hydrocarbons, self-associating polar water, and cross-associating molecules like methane, ethane, unsaturated hydrocarbons, CO2 and H2S. Such mixtures often occur when CO2 is injected and stored in saline aquifers, or when methane is leaking into groundwater. To accurately predict the species transfer between aqueous, gaseous and oleic phases, and the subsequent change in phase properties, the self- and cross-associating behavior of molecules needs to be taken into account, particularly at the typical temperatures and pressures in deep formations. The Cubic-Plus-Association equation-of-state (EOS) has been demonstrated to be highly accurate for such problems but its excessive computational cost has prevented widespread use in reservoir simulators. We discuss the thermodynamical framework and develop sophisticated numerical algorithms that allow reservoir simulations with efficiencies comparable to a simple cubic EOS. This approach improves our predictive powers for highly nonlinear fluid behavior related to geological carbon sequestration, such as density driven flow and natural convection (solubility trapping), evaporation of water into the CO2-rich gas phase, and competitive dissolution-evaporation when CO2 is injected in, e.g., methane saturated aquifers. Several examples demonstrate the accuracy and robustness of this EOS framework for complex applications.

  1. X-Ray Elastic Constants for Cubic Materials

    Energy Technology Data Exchange (ETDEWEB)

    Malen, K

    1974-10-15

    The stress-strain relation to be used in X-ray stress measurements in anisotropic texture-free media is studied. The method for evaluation of appropriate elastic constants for a cubic medium is described. Some illustrative numerical examples have been worked out including line broadening due to elastic anisotropy. The elastic stress and strain compatibility at grain boundaries is taken into account using Kroner's method. These elastic constants obviously only apply when no internal stresses due to plastic deformation are present. The case of reorientation of free interstitials in the stress field can be taken into account

  2. Inhomogeneous atomic Bose-Fermi mixtures in cubic lattices

    International Nuclear Information System (INIS)

    Cramer, M.; Eisert, J.; Illuminati, F.

    2004-01-01

    We determine the ground state properties of inhomogeneous mixtures of bosons and fermions in cubic lattices and parabolic confining potentials. For finite hopping we determine the domain boundaries between Mott-insulator plateaux and hopping-dominated regions for lattices of arbitrary dimension within mean-field and perturbation theory. The results are compared with a new numerical method that is based on a Gutzwiller variational approach for the bosons and an exact treatment for the fermions. The findings can be applied as a guideline for future experiments with trapped atomic Bose-Fermi mixtures in optical lattices

  3. Inhomogeneous atomic Bose-Fermi mixtures in cubic lattices.

    Science.gov (United States)

    Cramer, M; Eisert, J; Illuminati, F

    2004-11-05

    We determine the ground state properties of inhomogeneous mixtures of bosons and fermions in cubic lattices and parabolic confining potentials. For finite hopping we determine the domain boundaries between Mott-insulator plateaux and hopping-dominated regions for lattices of arbitrary dimension within mean-field and perturbation theory. The results are compared with a new numerical method that is based on a Gutzwiller variational approach for the bosons and an exact treatment for the fermions. The findings can be applied as a guideline for future experiments with trapped atomic Bose-Fermi mixtures in optical lattices.

  4. Universal centers in the cubic trigonometric Abel equation

    Directory of Open Access Journals (Sweden)

    Jaume Giné

    2014-02-01

    Full Text Available We study the center problem for the trigonometric Abel equation $d \\rho/ d \\theta= a_1 (\\theta \\rho^2 + a_2(\\theta \\rho^3,$ where $a_1(\\theta$ and $a_2(\\theta$ are cubic trigonometric polynomials in $\\theta$. This problem is closely connected with the classical Poincaré center problem for planar polynomial vector fields. A particular class of centers, the so-called universal centers or composition centers, is taken into account. An example of non-universal center and a characterization of all the universal centers for such equation are provided.

  5. X-Ray Elastic Constants for Cubic Materials

    Energy Technology Data Exchange (ETDEWEB)

    Malen, K.

    1974-10-15

    The stress-strain relation to be used in X-ray stress measurements in anisotropic texture-free media is studied. The method for evaluation of appropriate elastic constants for a cubic medium is described. Some illustrative numerical examples have been worked out including line broadening due to elastic anisotropy. The elastic stress and strain compatibility at grain boundaries is taken into account using Kroner's method. These elastic constants obviously only apply when no internal stresses due to plastic deformation are present. The case of reorientation of free interstitials in the stress field can be taken into account

  6. X-Ray Elastic Constants for Cubic Materials

    International Nuclear Information System (INIS)

    Malen, K.

    1974-10-01

    The stress-strain relation to be used in X-ray stress measurements in anisotropic texture-free media is studied. The method for evaluation of appropriate elastic constants for a cubic medium is described. Some illustrative numerical examples have been worked out including line broadening due to elastic anisotropy. The elastic stress and strain compatibility at grain boundaries is taken into account using Kroner's method. These elastic constants obviously only apply when no internal stresses due to plastic deformation are present. The case of reorientation of free interstitials in the stress field can be taken into account

  7. Trapping of cubic ZnO nanocrystallites at ambient conditions

    DEFF Research Database (Denmark)

    Decremps, F.; Pellicer-Porres, J.; Datchi, F.

    2002-01-01

    Dense powder of nanocrystalline ZnO has been recovered at ambient conditions in the metastable cubic structure after a heat treatment at high pressure (15 GPa and 550 K). Combined x-ray diffraction (XRD) and x-ray absorption spectroscopy (XAS) experiments have been performed to probe both long......-range order and local crystallographic structure of the recovered sample. Within uncertainty of these techniques (about 5%), all the crystallites are found to adopt the NaCl structure. From the analysis of XRD and XAS spectra, the cell volume per chemical formula unit is found to be 19.57(1) and 19...

  8. Synthesis and Optical Properties of Cubic Gold Nanoframes.

    Science.gov (United States)

    Au, Leslie; Chen, Yeechi; Zhou, Fei; Camargo, Pedro H C; Lim, Byungkwon; Li, Zhi-Yuan; Ginger, David S; Xia, Younan

    2008-12-01

    This paper describes a facile method of preparing cubic Au nanoframes with open structures via the galvanic replacement reaction between Ag nanocubes and AuCl(2) (-). A mechanistic study of the reaction revealed that the formation of Au nanoframes relies on the diffusion of both Au and Ag atoms. The effect of the edge length and ridge thickness of the nanoframes on the localized surface plasmon resonance peak was explored by a combination of discrete dipole approximation calculations and single nanoparticle spectroscopy. With their hollow and open structures, the Au nanoframes represent a novel class of substrates for applications including surface plasmonics and surface-enhanced Raman scattering.

  9. Topological Characterization of Carbon Graphite and Crystal Cubic Carbon Structures.

    Science.gov (United States)

    Siddiqui, Wei Gao Muhammad Kamran; Naeem, Muhammad; Rehman, Najma Abdul

    2017-09-07

    Graph theory is used for modeling, designing, analysis and understanding chemical structures or chemical networks and their properties. The molecular graph is a graph consisting of atoms called vertices and the chemical bond between atoms called edges. In this article, we study the chemical graphs of carbon graphite and crystal structure of cubic carbon. Moreover, we compute and give closed formulas of degree based additive topological indices, namely hyper-Zagreb index, first multiple and second multiple Zagreb indices, and first and second Zagreb polynomials.

  10. The cyclicity of a cubic system with nonradical Bautin ideal

    Science.gov (United States)

    Levandovskyy, Viktor; Romanovski, Valery G.; Shafer, Douglas S.

    We present a method for investigating the cyclicity of an elementary focus or center of a polynomial system of differential equations by means of complexification of the system and application of algorithms of computational algebra, showing an approach to treating the case that the Bautin ideal B of focus quantities is not a radical ideal (more precisely, when the ideal B is not radical, where B is the ideal generated by the shortest initial string of focus quantities that, like the Bautin ideal, determines the center variety). We illustrate the method with a family of cubic systems.

  11. Multi-dimensional cubic interpolation for ICF hydrodynamics simulation

    International Nuclear Information System (INIS)

    Aoki, Takayuki; Yabe, Takashi.

    1991-04-01

    A new interpolation method is proposed to solve the multi-dimensional hyperbolic equations which appear in describing the hydrodynamics of inertial confinement fusion (ICF) implosion. The advection phase of the cubic-interpolated pseudo-particle (CIP) is greatly improved, by assuming the continuities of the second and the third spatial derivatives in addition to the physical value and the first derivative. These derivatives are derived from the given physical equation. In order to evaluate the new method, Zalesak's example is tested, and we obtain successfully good results. (author)

  12. Method of forming an abrasive compact of cubic boron nitride

    International Nuclear Information System (INIS)

    Bell, F.R.

    1976-01-01

    This patent concerns an abrasive compact comprising diamond or cubic boron nitride or mixtures thereof held in a matrix of a refractory substance and a substance which dissolves the abrasive particle to at least a limited extent. The compact may be made by subjecting a powdered mixture of the ingredients to conditions of temperature and pressure at which the abrasive particle is crystallographically stable and the solvent substance acts to dissolve the abrasive particle. The refractory substance and solvent substance are preferably so chosen that during compact manufacture there is interaction resulting in the formation of a hard material

  13. Cubic Plus Association Equation of State for Flow Assurance Projects

    DEFF Research Database (Denmark)

    dos Santos, Leticia Cotia; Abunahman, Samir Silva; Tavares, Frederico Wanderley

    2015-01-01

    Thermodynamic hydrate inhibitors such as methanol, ethanol, (mono) ethylene glycol (MEG), and triethylene glycol (TEG) are widely used in the oil and gas industry. On modeling these compounds, we show here how the CPA equation of state was implemented in an in-house process simulator as an in......-built model: To validate the implementation, we show calulations for binary systems containing hydrate inhibitors and water or hydrocarbons using the Cubic Plus Association (CPA) and Soave-Redlich-Kwong (SRK) equation of states, also comparing against experimental data. For streams containing natural gas...

  14. Rotary Ultrasonic Machining of Poly-Crystalline Cubic Boron Nitride

    Directory of Open Access Journals (Sweden)

    Kuruc Marcel

    2014-12-01

    Full Text Available Poly-crystalline cubic boron nitride (PCBN is one of the hardest material. Generally, so hard materials could not be machined by conventional machining methods. Therefore, for this purpose, advanced machining methods have been designed. Rotary ultrasonic machining (RUM is included among them. RUM is based on abrasive removing mechanism of ultrasonic vibrating diamond particles, which are bonded on active part of rotating tool. It is suitable especially for machining hard and brittle materials (such as glass and ceramics. This contribution investigates this advanced machining method during machining of PCBN.

  15. Soliton interaction in quadratic and cubic bulk media

    DEFF Research Database (Denmark)

    Johansen, Steffen Kjær; Bang, Ole

    2000-01-01

    Summary form only given. The understanding of how and to what extend the cubic nonlinearity affects beam propagation and spatial soliton formation in quadratic media is of vital importance in fundamental and applied nonlinear physics. We consider beam propagation under type-I SHG conditions...... in lossless bulk second order nonlinear optical materials with a nonvanishing third order nonlinearity. It is known that in pure second order systems a single soliton can never collapse whereas in systems with both nonlinearities and that stable single soliton propagation can only in some circumstances...

  16. Bistable Helmholtz solitons in cubic-quintic materials

    International Nuclear Information System (INIS)

    Christian, J. M.; McDonald, G. S.; Chamorro-Posada, P.

    2007-01-01

    We propose a nonlinear Helmholtz equation for modeling the evolution of broad optical beams in media with a cubic-quintic intensity-dependent refractive index. This type of nonlinearity is appropriate for some semiconductor materials, glasses, and polymers. Exact analytical soliton solutions are presented that describe self-trapped nonparaxial beams propagating at any angle with respect to the reference direction. These spatially symmetric solutions are, to the best of our knowledge, the first bistable Helmholtz solitons to be derived. Accompanying conservation laws (both integral and particular forms) are also reported. Numerical simulations investigate the stability of the solitons, which appear to be remarkably robust against perturbations

  17. Compressibility and thermal expansion of cubic silicon nitride

    DEFF Research Database (Denmark)

    Jiang, Jianzhong; Lindelov, H.; Gerward, Leif

    2002-01-01

    The compressibility and thermal expansion of the cubic silicon nitride (c-Si3N4) phase have been investigated by performing in situ x-ray powder-diffraction measurements using synchrotron radiation, complemented with computer simulations by means of first-principles calculations. The bulk...... compressibility of the c-Si3N4 phase originates from the average of both Si-N tetrahedral and octahedral compressibilities where the octahedral polyhedra are less compressible than the tetrahedral ones. The origin of the unit cell expansion is revealed to be due to the increase of the octahedral Si-N and N-N bond...

  18. In Situ Synthesis of Al-Based MMCs Reinforced with AlN by Mechanical Alloying under NH3 Gas

    Directory of Open Access Journals (Sweden)

    E. S. Caballero

    2018-05-01

    Full Text Available Aluminum matrix composites (AMCs reinforced by aluminum nitride were prepared by mechanical alloying followed by a simple press and sintering method. Milling began under vacuum and after a period of between 1 and 4 h, NH3 gas flow (1 cm3/s was incorporated until the total milling time of 5 h was reached. Results show that in addition to the strain hardening taking place during mechanical alloying, NH3 plays an additional role in powder hardening. Thereby, the properties of the sintered compacts are strongly influenced by the amount of N incorporated into the powders during milling and the subsequent formation of AlN during the consolidation process. The obtained AMC reaches tensile strengths as high as 459 MPa and hardness much higher than that of the as-received aluminum compact.

  19. Plastic deformation of cubic zirconia single crystals at 1400 C

    International Nuclear Information System (INIS)

    Baufeld, B.; Baither, D.; Bartsch, M.; Messerschmidt, U.

    1998-01-01

    Cubic zirconia single crystals stabilized with 11 mol% yttria were deformed in air at 1400 C and around 1200 C at different strain rates along [1 anti 12] and [100] compression directions. The strain rate sensitivity of the flow stress was determined by strain rate cycling and stress relaxation tests. The microstructure of the deformed specimens was investigated by transmission high-voltage electron microscopy, including contrast extinction analysis for determining the Burgers vectors as well as stereo pairs and wide-angle tilting experiments to find the active slip planes. At deformation along [1 anti 12], the primary and secondary slip planes are of {100} type. Previous experiments had shown that the dislocations move easily on these planes in an athermal way. During deformation along [100], mainly dislocations on {100} planes are activated, which move in a viscous way by the aid of thermal activation. The discussion of the different deformation behaviours during deformation along [1 anti 12] and [100] is based on the different dynamic properties of dislocations and the fact that recovery is an essential feature of the deformation of cubic zirconia at 1400 C. The results on the shape of the deformation curve and the strain rate sensitivity of the flow stress are partly at variance with those of previous authors. (orig.)

  20. Efficient LBM visual simulation on face-centered cubic lattices.

    Science.gov (United States)

    Petkov, Kaloian; Qiu, Feng; Fan, Zhe; Kaufman, Arie E; Mueller, Klaus

    2009-01-01

    The Lattice Boltzmann method (LBM) for visual simulation of fluid flow generally employs cubic Cartesian (CC) lattices such as the D3Q13 and D3Q19 lattices for the particle transport. However, the CC lattices lead to suboptimal representation of the simulation space. We introduce the face-centered cubic (FCC) lattice, fD3Q13, for LBM simulations. Compared to the CC lattices, the fD3Q13 lattice creates a more isotropic sampling of the simulation domain and its single lattice speed (i.e., link length) simplifies the computations and data storage. Furthermore, the fD3Q13 lattice can be decomposed into two independent interleaved lattices, one of which can be discarded, which doubles the simulation speed. The resulting LBM simulation can be efficiently mapped to the GPU, further increasing the computational performance. We show the numerical advantages of the FCC lattice on channeled flow in 2D and the flow-past-a-sphere benchmark in 3D. In both cases, the comparison is against the corresponding CC lattices using the analytical solutions for the systems as well as velocity field visualizations. We also demonstrate the performance advantages of the fD3Q13 lattice for interactive simulation and rendering of hot smoke in an urban environment using thermal LBM.

  1. Defect ordering in aliovalently doped cubic zirconia from first principles

    International Nuclear Information System (INIS)

    Bogicevic, A.; Wolverton, C.; Crosbie, G.M.; Stechel, E.B.

    2001-01-01

    Defect ordering in aliovalently doped cubic-stabilized zirconia is studied using gradient corrected density-functional calculations. Intra- and intersublattice ordering interactions are investigated for both cation (Zr and dopant ions) and anion (oxygen ions and vacancies) species. For yttria-stabilized zirconia, the crystal structure of the experimentally identified, ordered compound δ-Zr 3 Y 4 O 12 is established, and we predict metastable zirconia-rich ordered phases. Anion vacancies repel each other at short separations, but show an energetic tendency to align as third-nearest neighbors along directions. Calculations with divalent (Be, Mg, Ca, Sr, Ba) and trivalent (Y, Sc, B, Al, Ga, In) oxides show that anion vacancies prefer to be close to the smaller of the cations (Zr or dopant ion). When the dopant cation is close in size to Zr, the vacancies show no particular preference, and are thus less prone to be bound preferentially to any particular cation type when the vacancies traverse such oxides. This ordering tendency offers insight into the observed high conductivity of Y 2 O 3 - and Sc 2 O 3 -stabilized zirconia, as well as recent results using, e.g., lanthanide oxides. The calculations point to In 2 O 3 as a particularly promising stabilizer for high ionic conductivity. Thus we are able to directly link (thermodynamic) defect ordering to (kinetic) ionic conductivity in cubic-stabilized zirconia using first-principles atomistic calculations

  2. Zigzag and Helical AlN Layer Prepared by Glancing Angle Deposition and Its Application as a Buffer Layer in a GaN-Based Light-Emitting Diode

    Directory of Open Access Journals (Sweden)

    Lung-Chien Chen

    2012-01-01

    Full Text Available This study investigates an aluminum nitride (AlN nanorod structure sputtered by glancing angle deposition (GLAD and its application as a buffer layer for GaN-based light-emitting diodes (LEDs that are fabricated on sapphire substrates. The ray tracing method is adopted with a three-dimensional model in TracePro software. Simulation results indicate that the zigzag AlN nanorod structure is an optimal buffer layer in a GaN-based LED. Furthermore, the light output power of a GaN-based LED with a zigzag AlN nanorod structure improves to as much as 28.6% at a forward current of 20 mA over that of the GaN-based LED with a normal AlN buffer layer.

  3. Effect of the nand p-type Si(100) substrates with a SiC buffer layer on the growth mechanism and structure of epitaxial layers of semipolar AlN and GaN

    Science.gov (United States)

    Bessolov, V. N.; Grashchenko, A. S.; Konenkova, E. V.; Myasoedov, A. V.; Osipov, A. V.; Red'kov, A. V.; Rodin, S. N.; Rubets, V. P.; Kukushkin, S. A.

    2015-10-01

    A new effect of the n-and p-type doping of the Si(100) substrate with a SiC film on the growth mechanism and structure of AlN and GaN epitaxial layers has been revealed. It has been experimentally shown that the mechanism of AlN and GaN layer growth on the surface of a SiC layer synthesized by substituting atoms on n- and p-Si substrates is fundamentally different. It has been found that semipolar AlN and GaN layers on the SiC/Si(100) surface grow in the epitaxial and polycrystalline structures on p-Si and n-Si substrates, respectively. A new method for synthesizing epitaxial semipolar AlN and GaN layers by chloride-hydride epitaxy on silicon substrates has been proposed.

  4. Estudo da viabilidade de obtenção de cerâmicas de SiC por infiltração espontânea de misturas eutéticas de Y2O3-AlN, Y2O3-Al2O3, R2O3-AlN Study of the viability to produce SiC ceramics by Y2O3-AlN, Y2O3-Al2O3, R2O3-AlN spontaneous infiltration

    Directory of Open Access Journals (Sweden)

    G. C. R. Garcia

    2008-06-01

    Full Text Available As cerâmicas de carbeto de silício, SiC, apresentam excelentes propriedades quando obtidas por infiltração de determinados líquidos. Na infiltração o tempo de contato entre o líquido e o SiC a temperaturas elevadas é muito curto, diminuindo a probabilidade de formação dos produtos gasosos que interferem negativamente na resistência da peça final, como ocorre na sinterização via fase líquida. O objetivo deste trabalho é mostrar uma correlação entre molhabilidade e capacidade de infiltração de alguns aditivos em compactos de SiC. Foram preparados compactos de SiC por prensagem isostática a frio e posterior pré-sinterização via fase sólida. Nesses compactos foram infiltradas misturas de Y2O3-AlN, Y2O3-Al2O3, R2O3-AlN, nas composições eutéticas, 10 ºC acima da temperatura de fusão das respectivas misturas por 4, 8 e 12 min. Após infiltração, as amostras foram analisadas quanto à densidade aparente e real, fases cristalinas, microestrutura e grau de infiltração, sendo que as amostras infiltradas com Y2O3-AlN apresentaram melhores resultados.Silicon carbide ceramics, SiC, obtained by liquid infiltration have shown excellent properties. In infiltration process the contact time of the liquid with SiC at elevated temperature is short, decreasing the probability to form gaseous products that contribute negatively in the final product properties. This phenomenon occurs during SiC liquid phase sintering. The purpose of the present study was to investigate the correlation between wettability and infiltration tendency of some additives in SiC compacts. SiC compacts were prepared by cold isostatic pressing followed by solid phase pre-sintering. Into the compacts were introduced Y2O3-AlN, Y2O3-Al2O3, R2O3-AlN liquids with eutectic compositions at a temperature 10 ºC higher than the melting point of each mixture for 4, 8 and 12 min. Before infiltration, the samples were analyzed by determining densities, crystalline phases

  5. Effect of III/V ratio on the polarity of AlN and GaN layers grown in the metal rich growth regime on Si(111) by plasma assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Agrawal, Manvi; Dharmarasu, Nethaji; Radhakrishnan, K.; Pramana, Stevin Snellius

    2015-01-01

    Wet chemical etching, reflection high energy electron diffraction, scanning electron microscope and convergent beam electron diffraction have been employed to study the polarities of AlN and the subsequently grown GaN as a function of metal flux in the metal rich growth regime. Both AlN and GaN exhibited metal polarity in the intermediate growth conditions. However, in the droplet growth regime, the polarity of AlN and GaN were N polar and Ga polar, respectively. It was observed that Ga polar GaN could be obtained on both Al and N polar AlN. AlGaN/GaN high electron mobility transistor (HEMT) heterostructure exhibiting hall mobility of 900 cm 2 V -1 s -1 and sheet carrier density of 1.2 × 10 13 cm -2 was demonstrated using N polar AlN which confirmed Ga polarity of GaN. Al metal flux was likely to play an important role in controlling the polarity of AlN and determining the polarity of the subsequent GaN grown on Si(111) by plasma assisted molecular beam epitaxy (PA-MBE). (author)

  6. Hairy black holes in cubic quasi-topological gravity

    Energy Technology Data Exchange (ETDEWEB)

    Dykaar, Hannah [Department of Physics and Astronomy, University of Waterloo,200 University Avenue West, Waterloo, ON, N2L 3G1 (Canada); Department of Physics, McGill University,3600 rue University, Montreal, QC, H3A 2T8 (Canada); Hennigar, Robie A.; Mann, Robert B. [Department of Physics and Astronomy, University of Waterloo,200 University Avenue West, Waterloo, ON, N2L 3G1 (Canada)

    2017-05-09

    We construct a class of five dimensional black hole solutions to cubic quasi-topological gravity with conformal scalar hair and study their thermodynamics. We find these black holes provide the second example of black hole λ-lines: a line of second order (continuous) phase transitions, akin to the fluid/superfluid transition of {sup 4}He. Examples of isolated critical points are found for spherical black holes, marking the first in the literature to date. We also find various novel and interesting phase structures, including an isolated critical point occurring in conjunction with a double reentrant phase transition. The AdS vacua of the theory are studied, finding ghost-free configurations where the scalar field takes on a non-zero constant value, in notable contrast to the five dimensional Lovelock case.

  7. Bifurcation diagram of a cubic three-parameter autonomous system

    Directory of Open Access Journals (Sweden)

    Lenka Barakova

    2005-07-01

    Full Text Available In this paper, we study the cubic three-parameter autonomous planar system $$displaylines{ dot x_1 = k_1 + k_2x_1 - x_1^3 - x_2,cr dot x_2 = k_3 x_1 - x_2, }$$ where $k_2, k_3$ are greater than 0. Our goal is to obtain a bifurcation diagram; i.e., to divide the parameter space into regions within which the system has topologically equivalent phase portraits and to describe how these portraits are transformed at the bifurcation boundaries. Results may be applied to the macroeconomical model IS-LM with Kaldor's assumptions. In this model existence of a stable limit cycles has already been studied (Andronov-Hopf bifurcation. We present the whole bifurcation diagram and among others, we prove existence of more difficult bifurcations and existence of unstable cycles.

  8. Supersymmetry breaking and Nambu-Goldstone fermions with cubic dispersion

    Science.gov (United States)

    Sannomiya, Noriaki; Katsura, Hosho; Nakayama, Yu

    2017-03-01

    We introduce a lattice fermion model in one spatial dimension with supersymmetry (SUSY) but without particle number conservation. The Hamiltonian is defined as the anticommutator of two nilpotent supercharges Q and Q†. Each supercharge is built solely from spinless fermion operators and depends on a parameter g . The system is strongly interacting for small g , and in the extreme limit g =0 , the number of zero-energy ground states grows exponentially with the system size. By contrast, in the large-g limit, the system is noninteracting and SUSY is broken spontaneously. We study the model for modest values of g and show that under certain conditions spontaneous SUSY breaking occurs in both finite and infinite chains. We analyze the low-energy excitations both analytically and numerically. Our analysis suggests that the Nambu-Goldstone fermions accompanying the spontaneous SUSY breaking have cubic dispersion at low energies.

  9. Lipidic cubic phase serial millisecond crystallography using synchrotron radiation

    Directory of Open Access Journals (Sweden)

    Przemyslaw Nogly

    2015-03-01

    Full Text Available Lipidic cubic phases (LCPs have emerged as successful matrixes for the crystallization of membrane proteins. Moreover, the viscous LCP also provides a highly effective delivery medium for serial femtosecond crystallography (SFX at X-ray free-electron lasers (XFELs. Here, the adaptation of this technology to perform serial millisecond crystallography (SMX at more widely available synchrotron microfocus beamlines is described. Compared with conventional microcrystallography, LCP-SMX eliminates the need for difficult handling of individual crystals and allows for data collection at room temperature. The technology is demonstrated by solving a structure of the light-driven proton-pump bacteriorhodopsin (bR at a resolution of 2.4 Å. The room-temperature structure of bR is very similar to previous cryogenic structures but shows small yet distinct differences in the retinal ligand and proton-transfer pathway.

  10. A cubic autocatalytic reaction in a continuous stirred tank reactor

    Energy Technology Data Exchange (ETDEWEB)

    Yakubu, Aisha Aliyu; Yatim, Yazariah Mohd [School of Mathematical Sciences, Universiti Sains Malaysia, 11800 USM, Penang Malaysia (Malaysia)

    2015-10-22

    In the present study, the dynamics of the cubic autocatalytic reaction model in a continuous stirred tank reactor with linear autocatalyst decay is studied. This model describes the behavior of two chemicals (reactant and autocatalyst) flowing into the tank reactor. The behavior of the model is studied analytically and numerically. The steady state solutions are obtained for two cases, i.e. with the presence of an autocatalyst and its absence in the inflow. In the case with an autocatalyst, the model has a stable steady state. While in the case without an autocatalyst, the model exhibits three steady states, where one of the steady state is stable, the second is a saddle point while the last is spiral node. The last steady state losses stability through Hopf bifurcation and the location is determined. The physical interpretations of the results are also presented.

  11. The electric field of a uniformly charged cubic shell

    Science.gov (United States)

    McCreery, Kaitlin; Greenside, Henry

    2018-01-01

    As an integrative and insightful example for undergraduates learning about electrostatics, we discuss how to use symmetry, Coulomb's law, superposition, Gauss's law, and visualization to understand the electric field E (x ,y ,z ) produced by a uniformly charged cubic shell. We first discuss how to deduce qualitatively, using freshman-level physics, the perhaps surprising fact that the interior electric field is nonzero and has a complex structure, pointing inwards from the middle of each face of the shell and pointing outwards towards each edge and corner. We then discuss how to understand the quantitative features of the electric field by plotting an analytical expression for E along symmetry lines and on symmetry surfaces of the shell.

  12. Quantum-Carnot engine for particle confined to cubic potential

    Energy Technology Data Exchange (ETDEWEB)

    Sutantyo, Trengginas Eka P., E-mail: trengginas.eka@gmail.com; Belfaqih, Idrus H., E-mail: idrushusin21@gmail.com; Prayitno, T. B., E-mail: teguh-budi@unj.ac.id [Department of Physics, State University of Jakarta, Jl. Pemuda No.10, Rawamangun, Jakarta Timur 13220 (Indonesia)

    2015-09-30

    Carnot cycle consists of isothermal and adiabatic processes which are reversible. Using analogy in quantum mechanics, these processes can be well explained by replacing variables in classical process with a quantum system. Quantum system which is shown in this paper is a particle that moves under the influence of a cubic potential which is restricted only to the state of the two energy levels. At the end, the efficiency of the system is shown as a function of the width ratio between the initial conditions and the farthest wall while expanding. Furthermore, the system efficiency will be considered 1D and 2D cases. The providing efficiencies are different due to the influence of the degeneration of energy and the degrees of freedom of the system.

  13. Quantum-Carnot engine for particle confined to cubic potential

    International Nuclear Information System (INIS)

    Sutantyo, Trengginas Eka P.; Belfaqih, Idrus H.; Prayitno, T. B.

    2015-01-01

    Carnot cycle consists of isothermal and adiabatic processes which are reversible. Using analogy in quantum mechanics, these processes can be well explained by replacing variables in classical process with a quantum system. Quantum system which is shown in this paper is a particle that moves under the influence of a cubic potential which is restricted only to the state of the two energy levels. At the end, the efficiency of the system is shown as a function of the width ratio between the initial conditions and the farthest wall while expanding. Furthermore, the system efficiency will be considered 1D and 2D cases. The providing efficiencies are different due to the influence of the degeneration of energy and the degrees of freedom of the system

  14. Quantum corrections for the cubic Galileon in the covariant language

    Energy Technology Data Exchange (ETDEWEB)

    Saltas, Ippocratis D. [Institute of Astrophysics and Space Sciences, Faculty of Sciences, Campo Grande, PT1749-016 Lisboa (Portugal); Vitagliano, Vincenzo, E-mail: isaltas@fc.ul.pt, E-mail: vincenzo.vitagliano@ist.utl.pt [Multidisciplinary Center for Astrophysics and Department of Physics, Instituto Superior Técnico, University of Lisbon, Av. Rovisco Pais 1, 1049-001 Lisboa (Portugal)

    2017-05-01

    We present for the first time an explicit exposition of quantum corrections within the cubic Galileon theory including the effect of quantum gravity, in a background- and gauge-invariant manner, employing the field-reparametrisation approach of the covariant effective action at 1-loop. We show that the consideration of gravitational effects in combination with the non-linear derivative structure of the theory reveals new interactions at the perturbative level, which manifest themselves as higher-operators in the associated effective action, which' relevance is controlled by appropriate ratios of the cosmological vacuum and the Galileon mass scale. The significance and concept of the covariant approach in this context is discussed, while all calculations are explicitly presented.

  15. Explosive attractor solutions to a universal cubic delay equation

    Science.gov (United States)

    Sanz-Orozco, D.; Berk, H. L.

    2017-05-01

    New explosive attractor solutions have been found in a universal cubic delay equation that has been studied in both the plasma and the fluid mechanics literature. Through computational simulations and analytic approximations, it is found that the oscillatory component of the explosive mode amplitude solutions are described through multi-frequency Fourier expansions with respect to a pseudo-time variable. The spectral dependence of these solutions as a function of a system parameter, ϕ , is studied. The mode amplitude that is described in the explosive regime has two main features: a well-known envelope ( t 0 - t ) - 5 / 2 , with t0 the blow-up time of the amplitude, and a spectrum of discrete oscillations with ever-increasing frequencies, which may give experimental information about the properties of a system's equilibrium.

  16. THERMODYNAMIC PARAMETERS OF LEAD SULFIDE CRYSTALS IN THE CUBIC PHASE

    Directory of Open Access Journals (Sweden)

    T. O. Parashchuk

    2016-07-01

    Full Text Available Geometric and thermodynamic parameters of cubic PbS crystals were obtained using the computer calculations of the thermodynamic parameters within density functional theory method DFT. Cluster models for the calculation based on the analysis of the crystal and electronic structure. Temperature dependence of energy ΔE and enthalpy ΔH, Gibbs free energy ΔG, heat capacity at constant pressure CP and constant volume CV, entropy ΔS were determined on the basis of ab initio calculations of the crystal structure of molecular clusters. Analytical expressions of temperature dependences of thermodynamic parameters which were approximated with quantum-chemical calculation points have been presented. Experimental results compared with theoretically calculated data.

  17. Perbaikan Metode Penghitungan Debit Sungai Menggunakan Cubic Spline Interpolation

    Directory of Open Access Journals (Sweden)

    Budi I. Setiawan

    2007-09-01

    Full Text Available Makalah ini menyajikan perbaikan metode pengukuran debit sungai menggunakan fungsi cubic spline interpolation. Fungi ini digunakan untuk menggambarkan profil sungai secara kontinyu yang terbentuk atas hasil pengukuran jarak dan kedalaman sungai. Dengan metoda baru ini, luas dan perimeter sungai lebih mudah, cepat dan tepat dihitung. Demikian pula, fungsi kebalikannnya (inverse function tersedia menggunakan metode. Newton-Raphson sehingga memudahkan dalam perhitungan luas dan perimeter bila tinggi air sungai diketahui. Metode baru ini dapat langsung menghitung debit sungaimenggunakan formula Manning, dan menghasilkan kurva debit (rating curve. Dalam makalah ini dikemukaan satu canton pengukuran debit sungai Rudeng Aceh. Sungai ini mempunyai lebar sekitar 120 m dan kedalaman 7 m, dan pada saat pengukuran mempunyai debit 41 .3 m3/s, serta kurva debitnya mengikuti formula: Q= 0.1649 x H 2.884 , dimana Q debit (m3/s dan H tinggi air dari dasar sungai (m.

  18. Experimental core electron density of cubic boron nitride

    DEFF Research Database (Denmark)

    Wahlberg, Nanna; Bindzus, Niels; Bjerg, Lasse

    as well as experimental result. The redistribution of electron density will, if not accounted for, result in increased thermal parameters. It is estimated that 1.7-2 electrons is transferred from boron to nitrogen. [1]: N. Bindzus, T. Straasø, N. Wahlberg, J. Becker, L. Bjerg, N. Lock, A.-C. Dippel, and B......Experimental core electron density of cubic boron nitride Nanna Wahlberg*, Niels Bindzus*, Lasse Bjerg*, Jacob Becker*, and Bo B. Iversen* *Aarhus University, Department of Chemistry, CMC, Langelandsgade 140, 8000 Århus, Denmark The resent progress in powder diffraction provides data of quality...... obtained. The displacement parameters reported here are significantly lower than those previously reported, stressing the importance of an adequate description of the core density. The charge transfer from boron to nitrogen clearly affects the inner electron density, which is evident from theoretical...

  19. Electron–soliton dynamics in chains with cubic nonlinearity

    International Nuclear Information System (INIS)

    Sales, M O; Moura, F A B F de

    2014-01-01

    In our work, we consider the problem of electronic transport mediated by coupling with solitonic elastic waves. We study the electronic transport in a 1D unharmonic lattice with a cubic interaction between nearest neighboring sites. The electron-lattice interaction was considered as a linear function of the distance between neighboring atoms in our study. We numerically solve the dynamics equations for the electron and lattice and compute the dynamics of an initially localized electronic wave-packet. Our results suggest that the solitonic waves that exist within this nonlinear lattice can control the electron dynamics along the chain. Moreover, we demonstrate that the existence of a mobile electron–soliton pair exhibits a counter-intuitive dependence with the value of the electron-lattice coupling. (paper)

  20. Scattering of quantized solitary waves in the cubic Schrodinger equation

    International Nuclear Information System (INIS)

    Dolan, L.

    1976-01-01

    The quantum mechanics for N particles interacting via a delta-function potential in one space dimension and one time dimension is known. The second-quantized description of this system has for its Euler-Lagrange equations of motion the cubic Schrodinger equation. This nonlinear differential equation supports solitary wave solutions. A quantization of these solitons reproduces the weak-coupling limit to the known quantum mechanics. The phase shift for two-body scattering and the energy of the N-body bound state is derived in this approximation. The nonlinear Schrodinger equation is contrasted with the sine-Gordon theory in respect to the ideas which the classical solutions play in the description of the quantum states

  1. Linear electro-optic effect in cubic silicon carbide

    Science.gov (United States)

    Tang, Xiao; Irvine, Kenneth G.; Zhang, Dongping; Spencer, Michael G.

    1991-01-01

    The first observation is reported of the electrooptic effect of cubic silicon carbide (beta-SiC) grown by a low-pressure chemical vapor deposition reactor using the hydrogen, silane, and propane gas system. At a wavelength of 633 nm, the value of the electrooptic coefficient r41 in beta-SiC is determined to be 2.7 +/- 0.5 x 10 (exp-12) m/V, which is 1.7 times larger than that in gallium arsenide measured at 10.6 microns. Also, a half-wave voltage of 6.4 kV for beta-SiC is obtained. Because of this favorable value of electrooptic coefficient, it is believed that silicon carbide may be a promising candidate in electrooptic applications for high optical intensity in the visible region.

  2. Point defects in cubic boron nitride after neutron irradiation

    International Nuclear Information System (INIS)

    Atobe, Kozo; Honda, Makoto; Ide, Munetoshi; Yamaji, Hiromichi; Matsukawa, Tokuo; Fukuoka, Noboru; Okada, Moritami; Nakagawa, Masuo.

    1993-01-01

    The production of point defects induced by reactor neutrons and the thermal behavior of defects in sintered cubic boron nitride are investigated using the optical absorption and electron spin resonance (ESR) methods. A strong structureless absorption over the visible region was observed after fast neutron irradiation to a dose of 5.3 x 10 16 n/cm 2 (E > 0.1 MeV) at 25 K. This specimen also shows an ESR signal with g-value 2.006 ± 0.001, which can be tentatively identified as an electron trapped in a nitrogen vacancy. On examination of the thermal decay of the signal, the activation energy for recovery of the defects was determined to be about 1.79 eV. (author)

  3. Spatial 't Hooft loop to cubic order in hot QCD

    CERN Document Server

    Giovannangeli, P.

    2002-01-01

    Spatial 't Hooft loops of strength k measure the qualitative change in the behaviour of electric colour flux in confined and deconfined phase of SU (N) gauge theory. They show an area law in the deconfined phase, known analytica lly to two loop order with a ``k-scaling'' law k(N-k). In this paper we comput e the O(g^3) correction to the tension. It is due to neutral gluon fields that get their mass through interaction with the wall. The simple k-scaling is lost in cubic order. The generic problem of non-convexity shows up in this order an d the cure is provided. The result for large N is explicitely given. We show tha t nonperturbative effects appear at O(g^5).

  4. Bistable dark solitons of a cubic-quintic Helmholtz equation

    International Nuclear Information System (INIS)

    Christian, J. M.; McDonald, G. S.; Chamorro-Posada, P.

    2010-01-01

    We provide a report on exact analytical bistable dark spatial solitons of a nonlinear Helmholtz equation with a cubic-quintic refractive-index model. Our analysis begins with an investigation of the modulational instability characteristics of Helmholtz plane waves. We then derive a dark soliton by mapping the desired asymptotic form onto a uniform background field and obtain a more general solution by deploying rotational invariance laws in the laboratory frame. The geometry of the new soliton is explored in detail, and a range of new physical predictions is uncovered. Particular attention is paid to the unified phenomena of arbitrary-angle off-axis propagation and nondegenerate bistability. Crucially, the corresponding solution of paraxial theory emerges in a simultaneous multiple limit. We conclude with a set of computer simulations that examine the role of Helmholtz dark solitons as robust attractors.

  5. G2 cubic transition between two circles with shape control

    Science.gov (United States)

    Habib, Zulfiqar; Sakai, Manabu

    2009-01-01

    This paper describes a method for joining two circles with an S-shaped or with a broken back C-shaped transition curve, composed of at most two spiral segments. In highway and railway route design or car-like robot path planning, it is often desirable to have such a transition. It is shown that a single cubic curve can be used for blending or for a transition curve preserving G2 continuity with local shape control parameter and more flexible constraints. Provision of the shape parameter and flexibility provide freedom to modify the shape in a stable manner which is an advantage over previous work by Meek, Walton, Sakai and Habib.

  6. Dynamic Displacement Disorder of Cubic BaTiO3

    Science.gov (United States)

    Paściak, M.; Welberry, T. R.; Kulda, J.; Leoni, S.; Hlinka, J.

    2018-04-01

    The three-dimensional distribution of the x-ray diffuse scattering intensity of BaTiO3 has been recorded in a synchrotron experiment and simultaneously computed using molecular dynamics simulations of a shell model. Together, these have allowed the details of the disorder in paraelectric BaTiO3 to be clarified. The narrow sheets of diffuse scattering, related to the famous anisotropic longitudinal correlations of Ti ions, are shown to be caused by the overdamped anharmonic soft phonon branch. This finding demonstrates that the occurrence of narrow sheets of diffuse scattering agrees with a displacive picture of the cubic phase of this textbook ferroelectric material. The presented methodology allows one to go beyond the harmonic approximation in the analysis of phonons and phonon-related scattering.

  7. Principal spectra describing magnetooptic permittivity tensor in cubic crystals

    Energy Technology Data Exchange (ETDEWEB)

    Hamrlová, Jana [Nanotechnology Centre, VSB – Technical University of Ostrava, listopadu 15, Ostrava, 708 33 Czech Republic (Czech Republic); IT4Innovations Centre, VSB – Technical University of Ostrava, listopadu 15, Ostrava, 708 33 Czech Republic (Czech Republic); Legut, Dominik [IT4Innovations Centre, VSB – Technical University of Ostrava, listopadu 15, Ostrava, 708 33 Czech Republic (Czech Republic); Veis, Martin [Faculty of Mathematics and Physics, Charles University, Ke Karlovu 3, Prague, 121 16 Czech Republic (Czech Republic); Pištora, Jaromír [Nanotechnology Centre, VSB – Technical University of Ostrava, listopadu 15, Ostrava, 708 33 Czech Republic (Czech Republic); Hamrle, Jaroslav, E-mail: jaroslav.hamrle@vsb.cz [IT4Innovations Centre, VSB – Technical University of Ostrava, listopadu 15, Ostrava, 708 33 Czech Republic (Czech Republic); Faculty of Mathematics and Physics, Charles University, Ke Karlovu 3, Prague, 121 16 Czech Republic (Czech Republic); Department of Physics, VSB – Technical University of Ostrava, 17. listopadu 15, Ostrava, 708 33 Czech Republic (Czech Republic)

    2016-12-15

    We provide unified phenomenological description of magnetooptic effects being linear and quadratic in magnetization. The description is based on few principal spectra, describing elements of permittivity tensor up to the second order in magnetization. Each permittivity tensor element for any magnetization direction and any sample surface orientation is simply determined by weighted summation of the principal spectra, where weights are given by crystallographic and magnetization orientations. The number of principal spectra depends on the symmetry of the crystal. In cubic crystals owning point symmetry we need only four principal spectra. Here, the principal spectra are expressed by ab initio calculations for bcc Fe, fcc Co and fcc Ni in optical range as well as in hard and soft x-ray energy range, i.e. at the 2p- and 3p-edges. We also express principal spectra analytically using modified Kubo formula.

  8. Structure and energetics of nanotwins in cubic boron nitrides

    Energy Technology Data Exchange (ETDEWEB)

    Zheng, Shijian, E-mail: sjzheng@imr.ac.cn, E-mail: zrf@buaa.edu.cn; Ma, Xiuliang [Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China); Zhang, Ruifeng, E-mail: sjzheng@imr.ac.cn, E-mail: zrf@buaa.edu.cn [School of Materials Science and Engineering, and International Research Institute for Multidisciplinary Science, Beihang University, Beijing 100191 (China); Huang, Rong [Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200062 (China); Taniguchi, Takashi [National Institute for Materials Science, Tsukuba, Ibaraki 305-0044 (Japan); Ikuhara, Yuichi [Nanostructures Research Laboratory, Japan Fine Ceramics Center, Nagoya 456-8587 (Japan); Institute of Engineering Innovation, The University of Tokyo, Tokyo 113-8656 (Japan); Beyerlein, Irene J. [Theoretical Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

    2016-08-22

    Recently, nanotwinned cubic boron nitrides (NT c-BN) have demonstrated extraordinary leaps in hardness. However, an understanding of the underlying mechanisms that enable nanotwins to give orders of magnitude increases in material hardness is still lacking. Here, using transmission electron microscopy, we report that the defect density of twin boundaries depends on nanotwin thickness, becoming defect-free, and hence more stable, as it decreases below 5 nm. Using ab initio density functional theory calculations, we reveal that the Shockley partials, which may dominate plastic deformation in c-BNs, show a high energetic barrier. We also report that the c-BN twin boundary has an asymmetrically charged electronic structure that would resist migration of the twin boundary under stress. These results provide important insight into possible nanotwin hardening mechanisms in c-BN, as well as how to design these nanostructured materials to reach their full potential in hardness and strength.

  9. Effects of external surface charges on the enhanced piezoelectric potential of ZnO and AlN nanowires and nanotubes

    Directory of Open Access Journals (Sweden)

    Seong Min Kim

    2012-12-01

    Full Text Available We theoretically investigate external surface charge effects on piezoelectric potential of ZnO and AlN nanowires (NWs and nanotubes (NTs under uniform compression. The free carrier depletion caused by negative surface charges via surface functionalization on vertically compressed ZnO and AlN NWs/NTs is simulated using finite element calculation; this indicates the enhancement of piezoelectric potential is due to the free carriers (electrons being fully depleted at the critical surface charge density. Numerical simulations reveal that full coverage of surface charges surrounding the NTs increases the piezoelectric output potential exponentially within a relatively smaller range of charge density compared to the case of NWs for a typical donor concentration (∼1017 cm−3. The model can be used to design functional high-power semiconducting piezoelectric nanogenerators.

  10. Control of two-dimensional growth of AlN and high Al-content AlGaN-based MQWs for deep-UV LEDs

    Directory of Open Access Journals (Sweden)

    Weihuang Yang

    2013-05-01

    Full Text Available Dense and atomically flat AlN film with root-mean-square roughness value of 0.32 nm was grown on sapphire substrate at a relatively lower temperature by using a three-step epitaxy technique. On the basis of this AlN template, AlGaN-based multiple quantum wells (MQWs with atomically flat hetero-interfaces were epitaxially grown to suppress nonradiative recombination by introducing In as a surfactant during simultaneous source supply. As a result, single intense- and narrow-peaked photoluminescence was obtained from the MQWs. Finally, the deep ultraviolet light emitting diodes with well-behaved I-V characteristic and strong electroluminescence in the range of 256–312 nm were fabricated successfully.

  11. Control over the morphology of AlN during molecular beam epitaxy with the plasma activation of nitrogen on Si (111) substrates

    International Nuclear Information System (INIS)

    Mizerov, A. M.; Kladko, P. N.; Nikitina, E. V.; Egorov, A. Yu.

    2015-01-01

    The results of studies of the growth kinetics of AlN layers during molecular beam epitaxy with the plasma activation of nitrogen using Si (111) substrates are presented. The possibility of the growth of individual AlN/Si (111) nanocolumns using growth conditions with enrichment of the surface with metal near the formation mode of Al drops, at a substrate temperature close to maximal, during molecular beam epitaxy with the plasma activation of nitrogen (T s ≈ 850°C) is shown. The possibility of growing smooth AlN layers on a nanocolumnar AlN/Si (111) buffer with the use of T s ≈ 750°C and growth conditions providing enrichment with metal is shown

  12. Control over the morphology of AlN during molecular beam epitaxy with the plasma activation of nitrogen on Si (111) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Mizerov, A. M., E-mail: mizerov@beam.ioffe.ru; Kladko, P. N.; Nikitina, E. V.; Egorov, A. Yu. [Russian Academy of Sciences, St. Petersburg Academic University-Nanotechnology Research and Education Centre (Russian Federation)

    2015-02-15

    The results of studies of the growth kinetics of AlN layers during molecular beam epitaxy with the plasma activation of nitrogen using Si (111) substrates are presented. The possibility of the growth of individual AlN/Si (111) nanocolumns using growth conditions with enrichment of the surface with metal near the formation mode of Al drops, at a substrate temperature close to maximal, during molecular beam epitaxy with the plasma activation of nitrogen (T{sub s} ≈ 850°C) is shown. The possibility of growing smooth AlN layers on a nanocolumnar AlN/Si (111) buffer with the use of T{sub s} ≈ 750°C and growth conditions providing enrichment with metal is shown.

  13. Processing simulated high-level liquid waste by heat treatment with addition of TiN and AlN or Al2O3

    International Nuclear Information System (INIS)

    Uno, Masayoshi; Kinoshita, Hajime; Sakai, Etsuro; Ikeda, Akira; Matsumoto, Y.; Yamanaka, Shinsuke

    1999-01-01

    The present study aims to decrease the melting temperature of the oxide phase by the addition of the mixture of TiN and AlN or Al 2 O 3 for reduction of the treatment temperature of super high temperature method. The addition of the mixture of TiN and AlN or Al 2 O 3 with the atomic ratio of Al to Ti of 1:9 caused the melting of both the alloy phase and oxide phase at 1673 K. The measured values of density and hardness for thus obtained oxide phase were same as those for the oxide phase obtained at 1873 K without Al. Thus, above mentioned method is achieved at 1673 K without degradation of the properties of the oxide phase as an waste. (author)

  14. Stoichiometric control for heteroepitaxial growth of smooth ɛ-Ga2O3 thin films on c-plane AlN templates by mist chemical vapor deposition

    Science.gov (United States)

    Tahara, Daisuke; Nishinaka, Hiroyuki; Morimoto, Shota; Yoshimoto, Masahiro

    2017-07-01

    Epitaxial ɛ-Ga2O3 thin films with smooth surfaces were successfully grown on c-plane AlN templates by mist chemical vapor deposition. Using X-ray diffraction 2θ-ω and φ scans, the out-of-plane and in-plane epitaxial relationship was determined to be (0001) ɛ-Ga2O3 [10\\bar{1}0] ∥ (0001)AlN[10\\bar{1}0]. The gallium/oxygen ratio was controlled by varying the gallium precursor concentration in the solution. While scanning electron microscopy showed the presence of large grains on the surfaces of the films formed for low concentrations of oxygen species, no large grains were observed under stoichiometric conditions. Cathodoluminescence measurements showed a deep-level emission ranging from 1.55-3.7 eV; however, no band-edge emission was observed.

  15. Multilayer gyroid cubic membrane organization in green alga Zygnema.

    Science.gov (United States)

    Zhan, Ting; Lv, Wenhua; Deng, Yuru

    2017-09-01

    Biological cubic membranes (CM), which are fluid membranes draped onto the 3D periodic parallel surface geometries with cubic symmetry, have been observed within subcellular organelles, including mitochondria, endoplasmic reticulum, and thylakoids. CM transition tends to occur under various stress conditions; however, multilayer CM organizations often appear associated with light stress conditions. This report is about the characterization of a projected gyroid CM in a transmission electron microscopy study of the chloroplast membranes within green alga Zygnema (LB923) whose lamellar form of thylakoid membrane started to fold into multilayer gyroid CM in the culture at the end of log phase of cell growth. Using the techniques of computer simulation of transmission electron microscopy (TEM) and a direct template matching method, we show that these CM are based on the gyroid parallel surfaces. The single, double, and multilayer gyroid CM morphologies are observed in which space is continuously divided into two, three, and more subvolumes by either one, two, or several parallel membranes. The gyroid CM are continuous with varying amount of pseudo-grana with lamellar-like morphology. The relative amount and order of these two membrane morphologies seem to vary with the age of cell culture and are insensitive to ambient light condition. In addition, thylakoid gyroid CM continuously interpenetrates the pyrenoid body through stalk, bundle-like, morphologies. Inside the pyrenoid body, the membranes re-folded into gyroid CM. The appearance of these CM rearrangements due to the consequence of Zygnema cell response to various types of environmental stresses will be discussed. These stresses include nutrient limitation, temperature fluctuation, and ultraviolet (UV) exposure.

  16. Cubic phase nanoparticles for sustained release of ibuprofen: formulation, characterization, and enhanced bioavailability study

    Science.gov (United States)

    Dian, Linghui; Yang, Zhiwen; Li, Feng; Wang, Zhouhua; Pan, Xin; Peng, Xinsheng; Huang, Xintian; Guo, Zhefei; Quan, Guilan; Shi, Xuan; Chen, Bao; Li, Ge; Wu, Chuanbin

    2013-01-01

    In order to improve the oral bioavailability of ibuprofen, ibuprofen-loaded cubic nanoparticles were prepared as a delivery system for aqueous formulations. The cubic inner structure was verified by cryogenic transmission electron microscopy. With an encapsulation efficiency greater than 85%, the ibuprofen-loaded cubic nanoparticles had a narrow size distribution around a mean size of 238 nm. Differential scanning calorimetry and X-ray diffraction determined that ibuprofen was in an amorphous and molecular form within the lipid matrix. The in vitro release of ibuprofen from cubic nanoparticles was greater than 80% at 24 hours, showing sustained characteristics. The pharmacokinetic study in beagle dogs showed improved absorption of ibuprofen from cubic nanoparticles compared to that of pure ibuprofen, with evidence of a longer half-life and a relative oral bioavailability of 222% (P ibuprofen-loaded cubic nanoparticles provide a promising carrier candidate with an efficient drug delivery for therapeutic treatment. PMID:23468008

  17. Dense and high-stability Ti2AlN MAX phase coatings prepared by the combined cathodic arc/sputter technique

    Science.gov (United States)

    Wang, Zhenyu; Liu, Jingzhou; Wang, Li; Li, Xiaowei; Ke, Peiling; Wang, Aiying

    2017-02-01

    Ti2AlN belongs to a family of ternary nano-laminate alloys known as the MAX phases, which exhibit a unique combination of metallic and ceramic properties. In the present work, the dense and high-stability Ti2AlN coating has been successfully prepared through the combined cathodic arc/sputter deposition, followed by heat post-treatment. It was found that the as-deposited Ti-Al-N coating behaved a multilayer structure, where (Ti, N)-rich layer and Al-rich layer grew alternately, with a mixed phase constitution of TiN and TiAlx. After annealing at 800 °C under vacuum condition for 1.5 h, although the multilayer structure still was found, part of multilayer interfaces became indistinct and disappeared. In particular, the thickness of the Al-rich layer decreased in contrast to that of as-deposited coating due to the inner diffusion of the Al element. Moreover, the Ti2AlN MAX phase emerged as the major phase in the annealed coatings and its formation mechanism was also discussed in this study. The vacuum thermal analysis indicated that the formed Ti2AlN MAX phase exhibited a high-stability, which was mainly benefited from the large thickness and the dense structure. This advanced technique based on the combined cathodic arc/sputter method could be extended to deposit other MAX phase coatings with tailored high performance like good thermal stability, high corrosion and oxidation resistance etc. for the next protective coating materials.

  18. Structure and lattice dynamics of GaN and AlN. Ab-initio investigations of strained polytypes and superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Wagner, Jan-Martin

    2004-10-14

    In this dissertation, ab-initio investigations of the strain influence on vibrational properties of GaN and AlN as well as of short-period GaN/AlN superlattices are presented. Based on densityfunctional theory and density-functional perturbation theory, for differently strained structures complete phonon spectra and related properties are calculated using the local-density approximation and norm-conserving pseudopotentials. (orig.)

  19. Effect of Solution Treatment on Precipitation Behaviors, Age Hardening Response and Creep Properties of Elektron21 Alloy Reinforced by AlN Nanoparticles.

    Science.gov (United States)

    Saboori, Abdollah; Padovano, Elisa; Pavese, Matteo; Dieringa, Hajo; Badini, Claudio

    2017-12-02

    In the present study, the solution and ageing treatments behavior of Mg-RE-Zr-Zn alloy (Elektron21) and its nano-AlN reinforced nanocomposites have been evaluated. The properties of the thermal-treated materials were investigated in terms of Vickers hardness, the area fraction of precipitates, microstructure and phase composition. The solution treatments were performed by treating at 520 °C, 550 °C and 580 °C in argon atmosphere. The outcomes show that the hardness of the solutionized alloys was slightly affected by the solution temperature. X-ray diffraction and image analysis revealed that the complete dissolution of precipitates was not possible, neither for Elektron21 (El21) nor for its AlN containing nanocomposites. The ageing treatment of El21 led to a significant improvement in hardness after 20 h, while for longer times, it progressively decreased. The effect of ageing on the hardness of El21-AlN composites was found to be much less than this effect on the hardness of the host alloy. Electron backscatter diffraction (EBSD) analysis of El21 and El21-1%AlN after solution treatment confirm the random orientation of grains with a typical texture of random distribution. The as-cast creep results showed that the incorporation of nanoparticles could effectively improve the creep properties, while the results after solution treatment at 520 °C for 12 h followed by ageing treatment at 200 °C for 20 h confirmed that the minimum creep rate of T6-El21 was almost equal to the as-cast El21-AlN.

  20. Reduction of the Mg acceptor activation energy in GaN, AlN, Al0.83Ga0.17N and MgGa δ-doping (AlN)5/(GaN)1: the strain effect

    Science.gov (United States)

    Jiang, Xin-He; Shi, Jun-Jie; Zhang, Min; Zhong, Hong-Xia; Huang, Pu; Ding, Yi-Min; He, Ying-Ping; Cao, Xiong

    2015-12-01

    To resolve the p-type doping problem of Al-rich AlGaN alloys, we investigate the influence of biaxial and hydrostatic strains on the activation energy, formation energy and band gap of Mg-doped GaN, AlN, Al0.83Ga0.17N disorder alloy and (AlN)5/(GaN)1 superlattice based on first-principles calculations by combining the standard DFT and hybrid functional. We find that the Mg acceptor activation energy {{E}\\text{A}} , the formation energy {{E}\\text{f}} and the band gap {{E}\\text{g}} decrease with increasing the strain ɛ. The hydrostatic strain has a more remarkable impact on {{E}\\text{g}} and {{E}\\text{A}} than the biaxial strain. Both {{E}\\text{A}} and {{E}\\text{g}} have a linear dependence on the hydrostatic strain. For the biaxial strain, {{E}\\text{g}} shows a parabolic dependence on ɛ if \\varepsilon ≤slant 0 while it becomes linear if \\varepsilon ≥slant 0 . In GaN and (AlN)5/(GaN)1, {{E}\\text{A}} parabolically depends on the biaxial compressive strain and linearly depends on the biaxial tensible strain. However, the dependence is approximately linear over the whole biaxial strain range in AlN and Al0.83Ga0.17N. The Mg acceptor activation energy in (AlN)5/(GaN)1 can be reduced from 0.26 eV without strain to 0.16 (0.22) eV with the hydrostatic (biaxial) tensible strain 3%.

  1. Influence of substrate biasing on the growth of c-axis oriented AlN thin films by RF reactive sputtering in pure nitrogen

    Energy Technology Data Exchange (ETDEWEB)

    Monteagudo-Lerma, L.; Naranjo, F.B.; Gonzalez-Herraez, M. [Departamento de Electronica, Escuela Politecnica, Universidad de Alcala, Campus Universitario, 28871 Alcala de Henares (Spain); Fernandez, S. [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Avda. Complutense 22, 28040 Madrid (Spain)

    2012-03-15

    We report on the investigation of the influence of deposition conditions on structural, morphological and optical properties of AlN thin films deposited on sapphire (Al{sub 2}O{sub 3}) substrates by radio-frequency (RF) reactive sputtering. The deposition parameters studied are RF power, substrate temperature and substrate bias, while using pure nitrogen as reactive gas. The effect of such deposition parameters on AlN film properties are analyzed by different characterization methods as high resolution X-ray diffraction (HRXRD), field emission scanning electron microscopy (FESEM) and linear optical transmission. AlN thin films with a full-width at half-maximum (FWHM) of the rocking curve obtained for the (0002) diffraction peak of 1.2 are achieved under optimized conditions. The time resolved evolution of the self and externally-induced biasing of the substrate during deposition process is monitored and analyzed in terms of the rate of atomic species incorporation into the layer. The bias-induced change of the atomic incorporation leads to an enhancement in the structural quality of the layer and an increase of the deposition rate. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Electrical and materials properties of AlN/ HfO{sub 2} high-k stack with a metal gate

    Energy Technology Data Exchange (ETDEWEB)

    Reid, Kimberly G. [Tokyo Electron U.S., 14338 FM 1826, Austin, TX 78737 (United States)], E-mail: kim@ireid.com; Dip, Anthony [Tokyo Electron U.S., 2400 Grove Blvd., Austin, TX 78747 (United States)], E-mail: anthony.dip@us.tel.com; Sasaki, Sadao [Tokyo Electron U.S. (United States)], E-mail: Sadao.sasaki@us.tel.com; Triyoso, Dina [Freescale Semiconductor Inc., 3501 Ed Bluestein Blvd, Austin, TX 78721 (United States)], E-mail: Dina.Triyoso@freescale.com; Samavedam, Sri [Freescale Semiconductor Inc., 3501 Ed Bluestein Blvd, Austin, TX 78721 (United States)], E-mail: Sri.Samavedam@freescale.com; Gilmer, David [SEMATECH 2706 Montopolis Drive, Austin, TX 78741 (United States)], E-mail: David.Gilmer@sematech.org; Gondran, Carolyn F.H. [Process Characterization Laboratory, ATDF/SEMATECH, 2706 Montopolis Drive, Austin, Texas 78741 (United States)], E-mail: Carolyn.Gondran@atdf.com

    2009-02-27

    In this study, aluminum nitride (AlN) was grown by molecular layer deposition on HfO{sub 2} that had been deposited on 200 mm Si (100) substrates. The AlN was grown on HfO{sub 2} using sequential exposures of trimethyl-aluminum and ammonia (NH{sub 3}) in a batch vertical furnace. Excellent thickness uniformity on test wafers from the top of the furnace to the bottom of the furnace (across the furnace load) was obtained. The equivalent oxide thickness was 16.5-18.8 A for the AlN/HfO{sub 2} stack on patterned device wafers with a molybdenum oxynitride metal gate with leakage current densities from low 10{sup -5} to mid 10{sup -6} A/cm{sup 2} at threshold voltage minus one volt. There was no change in the work function with the AlN cap on HfO{sub 2} with the MoN metal gate, even with a 1000 deg. C anneal.

  3. The effect of ammonia flow in the AlN spacer on the electrical properties of InAlN/AlN/GaN HEMT structures

    International Nuclear Information System (INIS)

    Gamarra, Piero; Lacam, Cedric; Magis, Michelle; Tordjman, Maurice; Di Forte Poisson, Marie-Antoinette

    2012-01-01

    During the past few years it has been reported that a thin AlN spacer of few nanometers needs to be inserted in InAlN/GaN high electron mobility transistors (HEMTs) to obtain high 2DEG carrier mobility. This work presents a systematic study of the effects of varying the ammonia flow in the AlN spacer of InAlN/AlN/GaN HEMTs grown by low pressure metalorganic vapour phase epitaxy (LP-MOVPE). The strain state, the surface roughness and the growth rate of AlN were found to be dependent on the V/III ratio. In addition the ammonia flow in the interlayer has a strong impact on the structural properties of the subsequent InAlN barrier layer and on the electrical properties of the structure. A sheet resistance as low as 327 Ω/□ with a sheet carrier density of 1.5 x 10 13 cm -2 has been obtained at room temperature. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. The effect of ammonia flow in the AlN spacer on the electrical properties of InAlN/AlN/GaN HEMT structures

    Energy Technology Data Exchange (ETDEWEB)

    Gamarra, Piero; Lacam, Cedric; Magis, Michelle; Tordjman, Maurice; Di Forte Poisson, Marie-Antoinette [III-V Lab., Marcussis (France)

    2012-01-15

    During the past few years it has been reported that a thin AlN spacer of few nanometers needs to be inserted in InAlN/GaN high electron mobility transistors (HEMTs) to obtain high 2DEG carrier mobility. This work presents a systematic study of the effects of varying the ammonia flow in the AlN spacer of InAlN/AlN/GaN HEMTs grown by low pressure metalorganic vapour phase epitaxy (LP-MOVPE). The strain state, the surface roughness and the growth rate of AlN were found to be dependent on the V/III ratio. In addition the ammonia flow in the interlayer has a strong impact on the structural properties of the subsequent InAlN barrier layer and on the electrical properties of the structure.istance as low as 327 {omega}/{open_square} with a sheet carrier density of 1.5 x 10{sup 13} cm{sup -2} has been obtained at room temperature. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Fernandez-Garrido, S.; Pereiro, J.; Munoz, E.; Calleja, E.; Redondo-Cubero, A.; Gago, R.; Bertram, F.; Christen, J.; Luna, E.; Trampert, A.

    2008-01-01

    Indium incorporation into wurtzite (0001)-oriented In x Al y Ga 1-x-y N layers grown by plasma-assisted molecular beam epitaxy was studied as a function of the growth temperature (565-635 deg. C) and the AlN mole fraction (0.01< y<0.27). The layer stoichiometry was determined by Rutherford backscattering spectrometry (RBS). RBS shows that indium incorporation decreased continuously with increasing growth temperature due to thermally enhanced dissociation of In-N bonds and for increasing AlN mole fractions. High resolution x-ray diffraction and transmission electron microscopy (TEM) measurements did not show evidence of phase separation. The mosaicity of the quaternary layers was found to be mainly determined by the growth temperature and independent on alloy composition within the range studied. However, depending on the AlN mole fraction, nanometer-sized composition fluctuations were detected by TEM. Photoluminescence spectra showed a single broad emission at room temperature, with energy and bandwidth S- and W-shaped temperature dependences typical of exciton localization by alloy inhomogeneities. Cathodoluminescence measurements demonstrated that the alloy inhomogeneities, responsible of exciton localization, occur on a lateral length scale below 150 nm, which is corroborated by TEM

  6. High-temperature carrier density and mobility enhancements in AlGaN/GaN HEMT using AlN spacer layer

    Science.gov (United States)

    Ko, Tsung-Shine; Lin, Der-Yuh; Lin, Chia-Feng; Chang, Che-Wei; Zhang, Jin-Cheng; Tu, Shang-Ju

    2017-04-01

    In this paper, we experimentally studied the effect of AlN spacer layer on optical and electrical properties of AlGaN/GaN high electric mobility transistors (HEMTs) grown by metal organic chemical vapor deposition method. For AlGaN layer in HEMT structure, the Al composition of the sample was determined using x-ray diffraction and photoluminescence. Electrolyte electro-reflectance (EER) measurement not only confirmed the aluminum composition of AlGaN layer, but also determined the electric field strength on the AlGaN layer through the Franz-Keldysh oscillation phenomenon. This result indicated that the electric field on the AlGaN layer could be improved from 430 to 621 kV/cm when AlN spacer layer was inserted in HEMT structure, which increased the concentration of two dimensional electron gas (2DEG) and improve the mobility. The temperature dependent Hall results show that both the mobility and the carrier concentration of 2DEG would decrease abruptly causing HEMT loss of function due to phonon scattering and carrier thermal escape when temperature increases above a specific value. Meanwhile, our study also demonstrates using AlN spacer layer could be beneficial to allow the mobility and carrier density of 2DEG sustaining at high temperature region.

  7. Electric quadrupole interaction in cubic BCC α-Fe

    Energy Technology Data Exchange (ETDEWEB)

    Błachowski, A.; Komędera, K. [Mössbauer Spectroscopy Division, Institute of Physics, Pedagogical University, ul. Podchorążych 2, PL-30-084 Kraków (Poland); Ruebenbauer, K., E-mail: sfrueben@cyf-kr.edu.pl [Mössbauer Spectroscopy Division, Institute of Physics, Pedagogical University, ul. Podchorążych 2, PL-30-084 Kraków (Poland); Cios, G.; Żukrowski, J. [AGH University of Science and Technology, Academic Center for Materials and Nanotechnology, Av. A. Mickiewicza 30, PL-30-059 Kraków (Poland); Górnicki, R. [RENON, ul. Gliniana 15/15, PL-30-732 Kraków (Poland)

    2016-07-15

    Mössbauer transmission spectra for the 14.41-keV resonant line in {sup 57}Fe have been collected at room temperature by using {sup 57}Co(Rh) commercial source and α-Fe strain-free single crystal as an absorber. The absorber was magnetized to saturation in the absorber plane perpendicular to the γ-ray beam axis applying small external magnetic field. Spectra were collected for various orientations of the magnetizing field, the latter lying close to the [110] crystal plane. A positive electric quadrupole coupling constant was found practically independent on the field orientation. One obtains the following value V{sub zz} = +1.61(4) × 10{sup 19} Vm{sup −2} for the (average) principal component of the electric field gradient (EFG) tensor under assumption that the EFG tensor is axially symmetric and the principal axis is aligned with the magnetic hyperfine field acting on the {sup 57}Fe nucleus. The nuclear spectroscopic electric quadrupole moment for the first excited state of the {sup 57}Fe nucleus was adopted as +0.17 b. Similar measurement was performed at room temperature using as-rolled polycrystalline α-Fe foil of high purity in the zero external field. Corresponding value for the principal component of the EFG was found as V{sub zz} = +1.92(4) × 10{sup 19} Vm{sup −2}. Hence, it seems that the origin of the EFG is primarily due to the local (atomic) electronic wave function distortion caused by the spin–orbit interaction between effective electronic spin S and incompletely quenched electronic angular momentum L. It seems as well that the lowest order term proportional to the product L·λ·S dominates, as no direction dependence of the EFG principal component is seen. The lowest order term is isotropic for a cubic symmetry as one has λ=λ 1 for cubic systems with the symbol 1 denoting unit operator and λ being the coupling parameter. - Highlights: • Precision of MS the same as MAPON • Real scans versus magnetization direction • A challenge

  8. Electric quadrupole interaction in cubic BCC α-Fe

    International Nuclear Information System (INIS)

    Błachowski, A.; Komędera, K.; Ruebenbauer, K.; Cios, G.; Żukrowski, J.; Górnicki, R.

    2016-01-01

    Mössbauer transmission spectra for the 14.41-keV resonant line in "5"7Fe have been collected at room temperature by using "5"7Co(Rh) commercial source and α-Fe strain-free single crystal as an absorber. The absorber was magnetized to saturation in the absorber plane perpendicular to the γ-ray beam axis applying small external magnetic field. Spectra were collected for various orientations of the magnetizing field, the latter lying close to the [110] crystal plane. A positive electric quadrupole coupling constant was found practically independent on the field orientation. One obtains the following value V_z_z = +1.61(4) × 10"1"9 Vm"−"2 for the (average) principal component of the electric field gradient (EFG) tensor under assumption that the EFG tensor is axially symmetric and the principal axis is aligned with the magnetic hyperfine field acting on the "5"7Fe nucleus. The nuclear spectroscopic electric quadrupole moment for the first excited state of the "5"7Fe nucleus was adopted as +0.17 b. Similar measurement was performed at room temperature using as-rolled polycrystalline α-Fe foil of high purity in the zero external field. Corresponding value for the principal component of the EFG was found as V_z_z = +1.92(4) × 10"1"9 Vm"−"2. Hence, it seems that the origin of the EFG is primarily due to the local (atomic) electronic wave function distortion caused by the spin–orbit interaction between effective electronic spin S and incompletely quenched electronic angular momentum L. It seems as well that the lowest order term proportional to the product L·λ·S dominates, as no direction dependence of the EFG principal component is seen. The lowest order term is isotropic for a cubic symmetry as one has λ=λ 1 for cubic systems with the symbol 1 denoting unit operator and λ being the coupling parameter. - Highlights: • Precision of MS the same as MAPON • Real scans versus magnetization direction • A challenge for ab initio calculations

  9. Characterization, Microstructure, and Dielectric properties of cubic pyrochlore structural ceramics

    KAUST Repository

    Li, Yangyang

    2013-05-01

    The (BMN) bulk materials were sintered at 1050°C, 1100°C, 1150°C, 1200°C by the conventional ceramic process, and their microstructure and dielectric properties were investigated by Scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy, Transmission electron microscopy (TEM) (including the X-ray energy dispersive spectrometry EDS and high resolution transmission electron microscopy HRTEM) and dielectric impedance analyzer. We systematically investigated the structure, dielectric properties and voltage tunable property of the ceramics prepared at different sintering temperatures. The XRD patterns demonstrated that the synthesized BMN solid solutions had cubic phase pyrochlore-type structure when sintered at 1050°C or higher, and the lattice parameter (a) of the unit cell in BMN solid solution was calculated to be about 10.56Å. The vibrational peaks observed in the Raman spectra of BMN solid solutions also confirmed the cubic phase pyrochlore-type structure of the synthesized BMN. According to the Scanning Electron Microscope (SEM) images, the grain size increased with increasing sintering temperature. Additionally, it was shown that the densities of the BMN ceramic tablets vary with sintering temperature. The calculated theoretical density for the BMN ceramic tablets sintered at different temperatures is about 6.7521 . The density of the respective measured tablets is usually amounting more than 91% and 5 approaching a maximum value of 96.5% for sintering temperature of 1150°C. The microstructure was investigated by using Scanning Transmission Electron Microscope (STEM), X-ray diffraction (XRD). Combined with the results obtained from the STEM and XRD, the impact of sintering temperature on the macroscopic and microscopic structure was discussed. The relative dielectric constant ( ) and dielectric loss ( ) of the BMN solid solutions were measured to be 161-200 and (at room temperature and 100Hz-1MHz), respectively. The BMN solid

  10. Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system

    Directory of Open Access Journals (Sweden)

    Takeshi Aoki

    2015-08-01

    Full Text Available This paper presents a compressive study on the fabrication and optimization of GaAs metal–oxide–semiconductor (MOS structures comprising a Al2O3 gate oxide, deposited via atomic layer deposition (ALD, with an AlN interfacial passivation layer prepared in situ via metal–organic chemical vapor deposition (MOCVD. The established protocol afforded self-limiting growth of Al2O3 in the atmospheric MOCVD reactor. Consequently, this enabled successive growth of MOCVD-formed AlN and ALD-formed Al2O3 layers on the GaAs substrate. The effects of AlN thickness, post-deposition anneal (PDA conditions, and crystal orientation of the GaAs substrate on the electrical properties of the resulting MOS capacitors were investigated. Thin AlN passivation layers afforded incorporation of optimum amounts of nitrogen, leading to good capacitance–voltage (C–V characteristics with reduced frequency dispersion. In contrast, excessively thick AlN passivation layers degraded the interface, thereby increasing the interfacial density of states (Dit near the midgap and reducing the conduction band offset. To further improve the interface with the thin AlN passivation layers, the PDA conditions were optimized. Using wet nitrogen at 600 °C was effective to reduce Dit to below 2 × 1012 cm−2 eV−1. Using a (111A substrate was also effective in reducing the frequency dispersion of accumulation capacitance, thus suggesting the suppression of traps in GaAs located near the dielectric/GaAs interface. The current findings suggest that using an atmosphere ALD process with in situ AlN passivation using the current MOCVD system could be an efficient solution to improving GaAs MOS interfaces.

  11. Evaluation of resonating Si cantilevers sputter-deposited with AlN piezoelectric thin films for mass sensing applications

    Science.gov (United States)

    Sökmen, Ü.; Stranz, A.; Waag, A.; Ababneh, A.; Seidel, H.; Schmid, U.; Peiner, E.

    2010-06-01

    We report on a micro-machined resonator for mass sensing applications which is based on a silicon cantilever excited with a sputter-deposited piezoelectric aluminium nitride (AlN) thin film actuator. An inductively coupled plasma (ICP) cryogenic dry etching process was applied for the micro-machining of the silicon substrate. A shift in resonance frequency was observed, which was proportional to a mass deposited in an e-beam evaporation process on top. We had a mass sensing limit of 5.2 ng. The measurements from the cantilevers of the two arrays revealed a quality factor of 155-298 and a mass sensitivity of 120.34 ng Hz-1 for the first array, and a quality factor of 130-137 and a mass sensitivity of 104.38 ng Hz-1 for the second array. Furthermore, we managed to fabricate silicon cantilevers, which can be improved for the detection in the picogram range due to a reduction of the geometrical dimensions.

  12. Texture of the nano-crystalline AlN thin films and the growth conditions in DC magnetron sputtering

    Directory of Open Access Journals (Sweden)

    Shakil Khan

    2015-08-01

    Full Text Available DC reactive magnetron sputtering technique has been used for the preparation of AlN thin films. The deposition temperature and the flow ratio of N2/Ar were varied and subsequent dependency of the films crystallites orientation/texture has been addressed. In general, deposited films were found hexagonal polycrystalline with a (002 preferred orientation. The X-ray diffraction (XRD data revealed that the film crystallinity improves, with the increase of substrate temperature from 300 °C to 500 °C. The dropped in full width half maximum (FWHM of the XRD rocking curve value further confirmed it. However, increasing substrate temperature above 500 °C or reducing the nitrogen condition (from 60 to 30% in the environment induced the growth of crystallites with (102 and (103 orientations. The rise of rocking curve FWHM for the corresponding conditions depicted that the films texture quality deteriorated. A further confirmation of the variation in film texture/orentation with the growth conditions has been obtained from the variation in FWHM values of a dominant E1 (TO mode in the Fourier transform infrared (FTIR spectra and the E2 (high mode in Raman spectra. We have correlated the columnar structure in AFM surface analyses with the (002 or c-axis orientation as well. Spectroscopic ellipsometry of the samples have shown a higher refractive index at 500 °C growth temperature.

  13. Statistical analysis of the effect of deposition parameters on the preferred orientation of sputtered AlN thin films

    International Nuclear Information System (INIS)

    Pantojas, V.M.; Otano-Rivera, W.; Caraballo, Jose N.

    2005-01-01

    A response surface statistical method was used to study the effects of deposition pressure, power and substrate temperature on the degree of preferred orientation of aluminum nitride films grown on Si (111) by dc magnetron sputtering. The AlN films were deposited at gas pressures ranging from 0.66 to 1.33 Pa, substrate temperature from 300 to 400 deg. C and power from 100 to 200 W. The degree of preferred orientation was evaluated and quantified using two-dimensional X-ray diffraction, which provides information on the out of plane (002) crystal alignment. The statistical method yielded a surface response curve in the parameter space and a correlation equation between the deposition parameters was obtained. Substrate temperature showed no significant effect upon texture quality for the temperature range studied. A surface response graph as a function of pressure and power was obtained. The main factor affecting texture quality was found to be a pressure-power interaction. The possible mechanisms that contribute to such correlation are discussed. Our best films yielded a rocking curve with full width at half maximum of 6.3 deg

  14. Anisotropically biaxial strain in non-polar (112-0) plane In x Ga1-x N/GaN layers investigated by X-ray reciprocal space mapping.

    Science.gov (United States)

    Zhao, Guijuan; Li, Huijie; Wang, Lianshan; Meng, Yulin; Ji, Zesheng; Li, Fangzheng; Wei, Hongyuan; Yang, Shaoyan; Wang, Zhanguo

    2017-07-03

    In this study, the indium composition x as well as the anisotropically biaxial strain in non-polar a-plane In x Ga 1-x N on GaN is studied by X-ray diffraction (XRD) analysis. In accordance with XRD reciprocal lattice space mapping, with increasing indium composition, the maximum of the In x Ga 1-x N reciprocal lattice points progressively shifts from a fully compressive strained to a fully relaxed position, then to reversed tensile strained. To fully understand the strain in the ternary alloy layers, it is helpful to grow high-quality device structures using a-plane nitrides. As the layer thickness increases, the strain of In x Ga 1-x N layer releases through surface roughening and the 3D growth-mode.

  15. Experimental evidence of body centered cubic iron in Earth's core

    Science.gov (United States)

    Hrubiak, R.; Meng, Y.; Shen, G.

    2017-12-01

    The Earth's core is mainly composed of iron. While seismic evidence has shown a liquid outer core and a solid inner core, the crystalline nature of the solid iron at the core condition remains debated, largely due to the difficulties in experimental determination of exact polymorphs at corresponding pressure-temperature conditions. We have examined crystal structures of iron up to 220 GPa and 6000 K with x-ray diffraction using a double-sided laser heating system at HPCAT, Advanced Photon Source. The iron sample is confined in a small chamber surrounded by single crystal MgO. The laser power can be modulated together with temperature measurements. The modulated heating of iron in an MgO single crystal matrix allows for microstructure analysis during heating and after the sample is quenched. We present experimental evidence of a body-centered-cubic (BCC) iron from about 100 GPa and 3000 K to at least 220 GPa and 4000 K. The observed BCC phase may be consistent with a theoretically predicted BCC phase that is dynamically stable in similar pressure-temperature conditions [1]. We will discuss the stability region of the BCC phase and the melting curve of iron and their implications in the nature of the Earth's inner core. References: A. B. Belonoshko et al., Nat. Geosci., 1-6 (2017).

  16. Cubic-quintic solitons in the checkerboard potential

    International Nuclear Information System (INIS)

    Driben, Rodislav; Zyss, Joseph; Malomed, Boris A.; Gubeskys, Arthur

    2007-01-01

    We introduce a two-dimensional (2D) model which combines a checkerboard potential, alias the Kronig-Penney (KP) lattice, with the self-focusing cubic and self-defocusing quintic nonlinear terms. The beam-splitting mechanism and soliton multistability are explored in this setting, following the recently considered 1D version of the model. Families of single- and multi-peak solitons (in particular, five- and nine-peak species naturally emerge in the 2D setting) are found in the semi-infinite gap, with both branches of bistable families being robust against perturbations. For single-peak solitons, the variational approximation (VA) is developed, providing for a qualitatively correct description of the transition from monostability to the bistability. 2D solitons found in finite band gaps are unstable. Also constructed are two different species of stable vortex solitons, arranged as four-peak patterns ('oblique' and 'straight' ones). Unlike them, compact 'crater-shaped' vortices are unstable, transforming themselves into randomly walking fundamental beams

  17. Tunable surface configuration of skyrmion lattices in cubic helimagnets

    Science.gov (United States)

    Wan, Xuejin; Hu, Yangfan; Wang, Biao

    2018-06-01

    In bulk helimagnets, the presence of magnetic skyrmion lattices is always accompanied by a periodic stress field due to the intrinsic magnetoelastic coupling. The release of this nontrivial stress field at the surface causes a periodic displacement field, which characterizes a novel particle-like property of skyrmion: its surface configuration. Here, we derive the analytical solution of this displacement field for semi-infinite cubic helimagnet with the skyrmion magnetization approximated by the triple-Q representation. For MnSi, we show that the skyrmion lattices have a bumpy surface configuration characterized by periodically arranged peaks with a characteristic height of about 10‑13 m. The pattern of the peaks can be controlled by varying the strength of the applied magnetic field. Moreover, we prove that the surface configuration varies together with the motion and deformation of the skyrmion lattices. As a result, the surface configuration can be tuned by application of electric current, mechanical loads, as well as any other effective external fields for skyrmion lattices.

  18. Plasmon polaritons in cubic lattices of spherical metallic nanoparticles

    Science.gov (United States)

    Lamowski, Simon; Mann, Charlie-Ray; Hellbach, Felicitas; Mariani, Eros; Weick, Guillaume; Pauly, Fabian

    2018-03-01

    We theoretically investigate plasmon polaritons in cubic lattices of spherical metallic nanoparticles. The nanoparticles, each supporting triply-degenerate localized surface plasmons, couple through the Coulomb dipole-dipole interaction, giving rise to collective plasmons that extend over the whole metamaterial. The latter hybridize with photons forming plasmon polaritons, which are the hybrid light-matter eigenmodes of the system. We derive general analytical expressions to evaluate both plasmon and plasmon-polariton dispersions and the corresponding eigenstates. These are obtained within a Hamiltonian formalism, which takes into account retardation effects in the dipolar interaction between the nanoparticles and considers the dielectric properties of the nanoparticles as well as their surrounding. Within this model we predict polaritonic splittings in the near-infrared to the visible range of the electromagnetic spectrum that depend on polarization, lattice symmetry, and wave-vector direction. Finally, we show that the predictions of our model are in excellent quantitative agreement with conventional finite-difference frequency-domain simulations, but with the advantages of analytical insight and significantly reduced computational cost.

  19. Twinning of cubic diamond explains reported nanodiamond polymorphs

    Science.gov (United States)

    Németh, Péter; Garvie, Laurence A. J.; Buseck, Peter R.

    2015-12-01

    The unusual physical properties and formation conditions attributed to h-, i-, m-, and n-nanodiamond polymorphs has resulted in their receiving much attention in the materials and planetary science literature. Their identification is based on diffraction features that are absent in ordinary cubic (c-) diamond (space group: Fd-3m). We show, using ultra-high-resolution transmission electron microscope (HRTEM) images of natural and synthetic nanodiamonds, that the diffraction features attributed to the reported polymorphs are consistent with c-diamond containing abundant defects. Combinations of {113} reflection and rotation twins produce HRTEM images and d-spacings that match those attributed to h-, i-, and m-diamond. The diagnostic features of n-diamond in TEM images can arise from thickness effects of c-diamonds. Our data and interpretations strongly suggest that the reported nanodiamond polymorphs are in fact twinned c-diamond. We also report a new type of twin ( rotational), which can give rise to grains with dodecagonal symmetry. Our results show that twins are widespread in diamond nanocrystals. A high density of twins could strongly influence their applications.

  20. Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon

    Science.gov (United States)

    Pradeepkumar, Aiswarya; Zielinski, Marcin; Bosi, Matteo; Verzellesi, Giovanni; Gaskill, D. Kurt; Iacopi, Francesca

    2018-06-01

    Heteroepitaxial 3C-SiC films on silicon substrates are of technological interest as enablers to integrate the excellent electrical, electronic, mechanical, thermal, and epitaxial properties of bulk silicon carbide into well-established silicon technologies. One critical bottleneck of this integration is the establishment of a stable and reliable electronic junction at the heteroepitaxial interface of the n-type SiC with the silicon substrate. We have thus investigated in detail the electrical and transport properties of heteroepitaxial cubic silicon carbide films grown via different methods on low-doped and high-resistivity silicon substrates by using van der Pauw Hall and transfer length measurements as test vehicles. We have found that Si and C intermixing upon or after growth, particularly by the diffusion of carbon into the silicon matrix, creates extensive interstitial carbon traps and hampers the formation of a stable rectifying or insulating junction at the SiC/Si interface. Although a reliable p-n junction may not be realistic in the SiC/Si system, we can achieve, from a point of view of the electrical isolation of in-plane SiC structures, leakage suppression through the substrate by using a high-resistivity silicon substrate coupled with deep recess etching in between the SiC structures.

  1. Anisotropic cubic lattice potts ferromagnet: renormalisation group treatment

    International Nuclear Information System (INIS)

    Tsallis, C.; Schwaccheim, G.; Silva, L.R. da; Rio Grande do Norte Univ., Natal

    1983-01-01

    Within a real space renormalisation group framework, the criticality of the fully anisotropic (arbitrary J sub(x), J sub(y) and J sub(z)) q-state Potts ferromagnet in simple cubic lattice is discussed. Several already known exact results for the d=1 and d=2 particular cases are recovered. Furthermore it is obtained: (i) the q-dependence of the d=3 correlation length critical exponent ν 3 (in particular, if q→0, ν 3 (q) approximatelly ν 3 (0)+ν 3 '(0)q) where the present approximate values are ν 3 (0) or approx.= 1.105 and ν 3 '(0) or approx.=-0.66; (ii) the q-dependence d=2 d=3 crossover critical exponent phi 23 (in particular, phi 23 varies as 1/√q if q Q→0); (iii) through a convenient numerical extrapolation, a quite accurate proposal for the critical temperatures corresponding to arbitrary ratios J sub(y)/ J sub(x) and J sub(z) / J sub(x) and values of q. (Author) [pt

  2. Hyperfine interactions in the cubic semiconductor CdO

    International Nuclear Information System (INIS)

    Desimoni, J.; Bibiloni, A.G.; Massolo, C.P.; Renteria, M.

    1990-01-01

    The time-differential perturbed angular correlation technique has been applied using 111 In probes, which decay through electron capture to 111 Cd, to study the hyperfine interaction in cubic cadmium oxide, in the temperature range RT--740 degree C (RT denotes room temperature). The main fraction of probes are located in perfect-lattice sites, with null electric field gradient in agreement with crystalline-structure considerations. Around 25% of the total intensity shows an electric-field-gradient distribution around V zz =0. This corresponds to probes located in sites perturbed by the vicinity of oxygen vacancies in the lattice. The temperature-independent behavior of the measured hyperfine parameters is discussed in terms of conductivity and band-structure properties of the semiconductor. No time-dependent interaction arising from nuclear electron-capture aftereffects are seen in this experiment. This is in agreement with a previously reported model of aftereffect processes which states that only holes trapped in impurity levels inside the band gap of the semiconductor can give rise to detectable fluctuating interactions

  3. Hyperfine interactions in the cubic semiconductor CdO

    Energy Technology Data Exchange (ETDEWEB)

    Desimoni, J.; Bibiloni, A.G.; Massolo, C.P.; Renteria, M. (Departamento de Fisica, Facultad de Ciencias Exactas, Universidad Nacional de La Plata, Casilla de Correo No. 67, 1900 La Plata, Argentina (AR))

    1990-01-15

    The time-differential perturbed angular correlation technique has been applied using {sup 111}In probes, which decay through electron capture to {sup 111}Cd, to study the hyperfine interaction in cubic cadmium oxide, in the temperature range RT--740 {degree}C (RT denotes room temperature). The main fraction of probes are located in perfect-lattice sites, with null electric field gradient in agreement with crystalline-structure considerations. Around 25% of the total intensity shows an electric-field-gradient distribution around {ital V}{sub {ital zz}}=0. This corresponds to probes located in sites perturbed by the vicinity of oxygen vacancies in the lattice. The temperature-independent behavior of the measured hyperfine parameters is discussed in terms of conductivity and band-structure properties of the semiconductor. No time-dependent interaction arising from nuclear electron-capture aftereffects are seen in this experiment. This is in agreement with a previously reported model of aftereffect processes which states that only holes trapped in impurity levels inside the band gap of the semiconductor can give rise to detectable fluctuating interactions.

  4. Cubic Interactions of Massless Bosonic Fields in Three Dimensions

    Science.gov (United States)

    Mkrtchyan, Karapet

    2018-06-01

    In this Letter, we take the first step towards construction of nontrivial Lagrangian theories of higher-spin gravity in a metriclike formulation in three dimensions. The crucial feature of a metriclike formulation is that it is known how to incorporate matter interactions into the description. We derive a complete classification of cubic interactions for arbitrary triples s1 , s2 , s3 of massless fields, which are the building blocks of any interacting theory with massless higher spins. We find that there is, at most, one vertex for any given triple of spins in 3D (with one exception, s1=s2=s3=1 , which allows for two vertices). Remarkably, there are no vertices for spin values that do not respect strict triangle inequalities and contain at least two spins greater than one. This translates into selection rules for three-point functions of higher-spin conserved currents in two dimensional conformal field theory. Furthermore, universal coupling to gravity for any spin is derived. Last, we argue that this classification persists in arbitrary Einstein backgrounds.

  5. STROPHOIDS, A FAMILY OF CUBIC CURVES WITH REMARKABLE PROPERTIES

    Directory of Open Access Journals (Sweden)

    STACHEL Hellmuth

    2015-06-01

    On each strophoid there is a symmetric relation of points, so-called ‘associated’ points, with a series of properties: The lines connecting associated points P and P’ are tangent of the negative pedal curve. Tangents at associated points intersect at a point which again lies on the cubic. For all pairs (P, P’ of associated points, the midpoints lie on a line through the node N. For any two pairs (P, P’ and (Q, Q’ of associated points, the points of intersection between the lines PQ and P’Q’ as well as between PQ’ and P’Q are again placed on the strophoid and mutually associated. The lines PQ and PQ’ are symmetric with respect to the line connecting P with the node. Thus, strophoids generalize Apollonian circles: For given non-collinear points A, A’ and N the locus of points X such that one angle bisector of the lines XA and XA’ passes through N is a strophoid.

  6. Research of Cubic Bezier Curve NC Interpolation Signal Generator

    Directory of Open Access Journals (Sweden)

    Shijun Ji

    2014-08-01

    Full Text Available Interpolation technology is the core of the computer numerical control (CNC system, and the precision and stability of the interpolation algorithm directly affect the machining precision and speed of CNC system. Most of the existing numerical control interpolation technology can only achieve circular arc interpolation, linear interpolation or parabola interpolation, but for the numerical control (NC machining of parts with complicated surface, it needs to establish the mathematical model and generate the curved line and curved surface outline of parts and then discrete the generated parts outline into a large amount of straight line or arc to carry on the processing, which creates the complex program and a large amount of code, so it inevitably introduce into the approximation error. All these factors affect the machining accuracy, surface roughness and machining efficiency. The stepless interpolation of cubic Bezier curve controlled by analog signal is studied in this paper, the tool motion trajectory of Bezier curve can be directly planned out in CNC system by adjusting control points, and then these data were put into the control motor which can complete the precise feeding of Bezier curve. This method realized the improvement of CNC trajectory controlled ability from the simple linear and circular arc to the complex project curve, and it provides a new way for economy realizing the curve surface parts with high quality and high efficiency machining.

  7. Nature and strength of defect interactions in cubic stabilized zirconia

    International Nuclear Information System (INIS)

    Bogicevic, A.; Wolverton, C.

    2003-01-01

    The intrinsic ordering tendencies that limit ionic conduction in doped zirconia electrolytes are fully elucidated using first-principles calculations. A detailed analysis of nearly 300 yttria- and scandia-stabilized cubic-zirconia-ordered vacancy compounds reveals a delicate balance between competing elastic and electrostatic interactions. These results explain several outstanding experimental observations and provide substantial insight needed for improving ionic conduction and enabling low-temperature operation of zirconia-based electrolytes. We show that the surprising vacancy ordering in dilute solid solutions is a consequence of repulsive electrostatic and attractive elastic interactions that balance at third-neighbor vacancy separations. In contrast, repulsive elastic vacancy-dopant interactions prevail over electrostatic attraction at all probed defect separations in YSZ and lead to very weak ordering preferences in ScSZ. The total electronic contribution to the defect interactions is shown to be strongly dominated by simple point-charge electrostatics, leaving speciation of defect ordering for a given class of aliovalent dopants to the elastic term. Thus, ion size becomes a critical parameter in controlling the ionic conductivity of doped oxide electrolytes

  8. Cubic mesoporous Ag@CN: a high performance humidity sensor.

    Science.gov (United States)

    Tomer, Vijay K; Thangaraj, Nishanthi; Gahlot, Sweta; Kailasam, Kamalakannan

    2016-12-01

    The fabrication of highly responsive, rapid response/recovery and durable relative humidity (%RH) sensors that can precisely monitor humidity levels still remains a considerable challenge for realizing the next generation humidity sensing applications. Herein, we report a remarkably sensitive and rapid %RH sensor having a reversible response using a nanocasting route for synthesizing mesoporous g-CN (commonly known as g-C 3 N 4 ). The 3D replicated cubic mesostructure provides a high surface area thereby increasing the adsorption, transmission of charge carriers and desorption of water molecules across the sensor surfaces. Owing to its unique structure, the mesoporous g-CN functionalized with well dispersed catalytic Ag nanoparticles exhibits excellent sensitivity in the 11-98% RH range while retaining high stability, negligible hysteresis and superior real time %RH detection performances. Compared to conventional resistive sensors based on metal oxides, a rapid response time (3 s) and recovery time (1.4 s) were observed in the 11-98% RH range. Such impressive features originate from the planar morphology of g-CN as well as unique physical affinity and favourable electronic band positions of this material that facilitate water adsorption and charge transportation. Mesoporous g-CN with Ag nanoparticles is demonstrated to provide an effective strategy in designing high performance %RH sensors and show great promise for utilization of mesoporous 2D layered materials in the Internet of Things and next generation humidity sensing applications.

  9. Twinning of cubic diamond explains reported nanodiamond polymorphs.

    Science.gov (United States)

    Németh, Péter; Garvie, Laurence A J; Buseck, Peter R

    2015-12-16

    The unusual physical properties and formation conditions attributed to h-, i-, m-, and n-nanodiamond polymorphs has resulted in their receiving much attention in the materials and planetary science literature. Their identification is based on diffraction features that are absent in ordinary cubic (c-) diamond (space group: Fd-3m). We show, using ultra-high-resolution transmission electron microscope (HRTEM) images of natural and synthetic nanodiamonds, that the diffraction features attributed to the reported polymorphs are consistent with c-diamond containing abundant defects. Combinations of {113} reflection and rotation twins produce HRTEM images and d-spacings that match those attributed to h-, i-, and m-diamond. The diagnostic features of n-diamond in TEM images can arise from thickness effects of c-diamonds. Our data and interpretations strongly suggest that the reported nanodiamond polymorphs are in fact twinned c-diamond. We also report a new type of twin ( rotational), which can give rise to grains with dodecagonal symmetry. Our results show that twins are widespread in diamond nanocrystals. A high density of twins could strongly influence their applications.

  10. Defect structure of cubic solid solutions of alkaline earth and rare earth fluorides

    NARCIS (Netherlands)

    DenHartog, HW

    1996-01-01

    In this paper we will consider the disorder in some cubic solid solutions consisting of one of the alkaline earth fluorides and one of the rare earth fluorides. This is an attractive group of model materials, because these materials have a rather simple overall cubic structure. We will discuss the

  11. Eliminating cubic terms in the pseudopotential lattice Boltzmann model for multiphase flow

    Science.gov (United States)

    Huang, Rongzong; Wu, Huiying; Adams, Nikolaus A.

    2018-05-01

    It is well recognized that there exist additional cubic terms of velocity in the lattice Boltzmann (LB) model based on the standard lattice. In this work, elimination of these cubic terms in the pseudopotential LB model for multiphase flow is investigated, where the force term and density gradient are considered. By retaining high-order (≥3 ) Hermite terms in the equilibrium distribution function and the discrete force term, as well as introducing correction terms in the LB equation, the additional cubic terms of velocity are entirely eliminated. With this technique, the computational simplicity of the pseudopotential LB model is well maintained. Numerical tests, including stationary and moving flat and circular interface problems, are carried out to show the effects of such cubic terms on the simulation of multiphase flow. It is found that the elimination of additional cubic terms is beneficial to reduce the numerical error, especially when the velocity is relatively large. Numerical results also suggest that these cubic terms mainly take effect in the interfacial region and that the density-gradient-related cubic terms are more important than the other cubic terms for multiphase flow.

  12. On the number of longest and almost longest cycles in cubic graphs

    DEFF Research Database (Denmark)

    Chia, Gek Ling; Thomassen, Carsten

    2012-01-01

    We consider the questions: How many longest cycles must a cubic graph have, and how many may it have? For each k >= 2 there are infinitely many p such that there is a cubic graph with p vertices and precisely one longest cycle of length p-k. On the other hand, if G is a graph with p vertices, all...

  13. Cubic Invariant Spherical Surface Harmonics in Conjunction With Diffraction Strain Pole-Figures

    NARCIS (Netherlands)

    Brakman, C.M.

    1986-01-01

    Four kinds of cubic invariant spherical surface harmonics are introduced. It has been shown previously that these harmonics occur in the equations relating measured diffraction (line-shift) elastic strain and macro-stresses generating these strains for the case of textured cubic materials. As a

  14. Non-spherical micelles in an oil-in-water cubic phase

    DEFF Research Database (Denmark)

    Leaver, M.; Rajagopalan, V.; Ulf, O.

    2000-01-01

    phase, both with and without SDS, was established by NMR self-diffusion. In addition H-2 NMR relaxation experiments have demonstrated that the micelles in the cubic phase are non-spherical, having grown and changed shape upon formation of the cubic phase from the micellar solution. Small angle...... associated with the micellar cubic phase, Pm3n and Fd3m. The micellar volumes calculated for these space groups are similar and are consistent with a change in micellar geometry from spherical to prolate.......The cubic phase formed between the microemulsion and hexagonal phases of the ternary pentaethylene glycol dodecyl ether (C12E5)-decane-water system and that doped with small amounts of sodium dodecylsulfate (SDS) have been investigated. The presence of discrete oil-swollen micelles in the cubic...

  15. Atomistic simulation of fatigue in face centred cubic metals

    International Nuclear Information System (INIS)

    Fan, Zhengxuan

    2016-01-01

    Fatigue is one of the major damage mechanisms of metals. It is characterized by strong environmental effects and wide lifetime dispersions which must be better understood. Different face centred cubic metals, al, Cu, Ni, and Ag are analyzed. The mechanical behaviour of surface steps naturally created by the glide of dislocations subjected to cyclic loading is examined using molecular dynamics simulations in vacuum and in air for Cu and Ni. an atomistic reconstruction phenomenon is observed at these surface steps which can induce strong irreversibility. Three different mechanisms of reconstruction are defined. Surface slip irreversibility under cyclic loading is analyzed. all surface steps are intrinsically irreversible under usual fatigue laboratory loading amplitude without the arrival of opposite sign dislocations on direct neighbor plane.With opposite sign dislocations on non direct neighbour planes, irreversibility cumulates cycle by cycle and a micro-notch is produced whose depth gradually increases.Oxygen environment affects the surface (first stage of oxidation) but does not lead to higher irreversibility as it has no major influence on the different mechanisms linked to surface relief evolution.a rough estimation of surface irreversibility is carried out for pure edge dislocations in persistent slip bands in so-called wavy materials. It gives an irreversibility fraction between 0.5 and 0.75 in copper in vacuum and in air, in agreement with recent atomic force microscopy measurements.Crack propagation mechanisms are simulated in inert environment. Cracks can propagate owing to the irreversibility of generated dislocations because of their mutual interactions up to the formation of dislocation junctions. (author) [fr

  16. Role of Adsorption Phenomena in Cubic Tricalcium Aluminate Dissolution.

    Science.gov (United States)

    Myers, Rupert J; Geng, Guoqing; Li, Jiaqi; Rodríguez, Erich D; Ha, Juyoung; Kidkhunthod, Pinit; Sposito, Garrison; Lammers, Laura N; Kirchheim, Ana Paula; Monteiro, Paulo J M

    2017-01-10

    The workability of fresh Portland cement (PC) concrete critically depends on the reaction of the cubic tricalcium aluminate (C 3 A) phase in Ca- and S-rich pH >12 aqueous solution, yet its rate-controlling mechanism is poorly understood. In this article, the role of adsorption phenomena in C 3 A dissolution in aqueous Ca-, S-, and polynaphthalene sulfonate (PNS)-containing solutions is analyzed. The zeta potential and pH results are consistent with the isoelectric point of C 3 A occurring at pH ∼12 and do not show an inversion of its electric double layer potential as a function of S or Ca concentration, and PNS adsorbs onto C 3 A, reducing its zeta potential to negative values at pH >12. The S and Ca K-edge X-ray absorption spectroscopy (XAS) data obtained do not indicate the structural incorporation or specific adsorption of SO 4 2- on the partially dissolved C 3 A solids analyzed. Together with supporting X-ray ptychography and scanning electron microscopy results, a model for C 3 A dissolution inhibition in hydrated PC systems is proposed whereby the formation of an Al-rich leached layer and the complexation of Ca-S ion pairs onto this leached layer provide the key inhibiting effect(s). This model reconciles the results obtained here with the existing literature, including the inhibiting action of macromolecules such as PNS and polyphosphonic acids upon C 3 A dissolution. Therefore, this article advances the understanding of the rate-controlling mechanism in hydrated C 3 A and thus PC systems, which is important to better controlling the workability of fresh PC concrete.

  17. Study of nonlinear waves described by the cubic Schroedinger equation

    International Nuclear Information System (INIS)

    Walstead, A.E.

    1980-01-01

    The cubic Schroedinger equation (CSE) is ubiquitous as a model equation for the long-time evolution of finite-amplitude near-monochromatic dispersive waves. It incorporates the effects of the radiation field pressure on the constitutive properties of the supporting medium in a self-consistent manner. The properties of the uniformly transiating periodic wave solutions of the one-dimensional CSE are studied here. These (so-called cnoidal) waves are characterized by the values of four parameters. Whitham's averaged variational principle is used to derive a system of quasilinear evolution equations (the modulational equations) for the values of these parameters when they are slowly varying in space and time. Explicit expressions for the characteristic velocities of the modulational equations are obtained for the full set of cnoidal waves. Riemann invariants are obtained for several limits for the stable case, and growth rates are obtained for several limits, including the solitary wave chain, for the unstable case. The results for several nontrivial limiting cases agree with those obtained by independent methods by others. The dynamics of the CSE generalized to two spatial dimensions are studied for the unstable case. A large class of similarity solutions with cylindrical symmetry are obtained systematically using infinitesimal transformation group techniques. The methods are adapted to obtain the symmetries of the action functional of the CSE and to deduce nine integral invariants. A numerical study of the self-similar solutions reveals that they are modulationally unstable and that singularities dominate the dynamics of the CSE in two dimensions. The CSE is derived using perturbation theory for a specific problem in plasma physics: the evolution of the envelope of a near-monochromatic electromagnetic wave in a cold magnetized plasma. 13 figures, 2 tables

  18. Study of nonlinear waves described by the cubic Schroedinger equation

    Energy Technology Data Exchange (ETDEWEB)

    Walstead, A.E.

    1980-03-12

    The cubic Schroedinger equation (CSE) is ubiquitous as a model equation for the long-time evolution of finite-amplitude near-monochromatic dispersive waves. It incorporates the effects of the radiation field pressure on the constitutive properties of the supporting medium in a self-consistent manner. The properties of the uniformly transiating periodic wave solutions of the one-dimensional CSE are studied here. These (so-called cnoidal) waves are characterized by the values of four parameters. Whitham's averaged variational principle is used to derive a system of quasilinear evolution equations (the modulational equations) for the values of these parameters when they are slowly varying in space and time. Explicit expressions for the characteristic velocities of the modulational equations are obtained for the full set of cnoidal waves. Riemann invariants are obtained for several limits for the stable case, and growth rates are obtained for several limits, including the solitary wave chain, for the unstable case. The results for several nontrivial limiting cases agree with those obtained by independent methods by others. The dynamics of the CSE generalized to two spatial dimensions are studied for the unstable case. A large class of similarity solutions with cylindrical symmetry are obtained systematically using infinitesimal transformation group techniques. The methods are adapted to obtain the symmetries of the action functional of the CSE and to deduce nine integral invariants. A numerical study of the self-similar solutions reveals that they are modulationally unstable and that singularities dominate the dynamics of the CSE in two dimensions. The CSE is derived using perturbation theory for a specific problem in plasma physics: the evolution of the envelope of a near-monochromatic electromagnetic wave in a cold magnetized plasma. 13 figures, 2 tables.

  19. Calculations of and evidence for chain packing stress in inverse lyotropic bicontinuous cubic phases.

    Science.gov (United States)

    Shearman, Gemma C; Khoo, Bee J; Motherwell, Mary-Lynn; Brakke, Kenneth A; Ces, Oscar; Conn, Charlotte E; Seddon, John M; Templer, Richard H

    2007-06-19

    Inverse bicontinuous cubic lyotropic phases are a complex solution to the dilemma faced by all self-assembled water-amphiphile systems: how to satisfy the incompatible requirements for uniform interfacial curvature and uniform molecular packing. The solution reached in this case is for the water-amphiphile interfaces to deform hyperbolically onto triply periodic minimal surfaces. We have previously suggested that although the molecular packing in these structures is rather uniform the relative phase behavior of the gyroid, double diamond, and primitive inverse bicontinuous cubic phases can be understood in terms of subtle differences in packing frustration. In this work, we have calculated the packing frustration for these cubics under the constraint that their interfaces have constant mean curvature. We find that the relative packing stress does indeed differ between phases. The gyroid cubic has the least packing stress, and at low water volume fraction, the primitive cubic has the greatest packing stress. However, at very high water volume fraction, the double diamond cubic becomes the structure with the greatest packing stress. We have tested the model in two ways. For a system with a double diamond cubic phase in excess water, the addition of a hydrophobe may release packing frustration and preferentially stabilize the primitive cubic, since this has previously been shown to have lower curvature elastic energy. We have confirmed this prediction by adding the long chain alkane tricosane to 1-monoolein in excess water. The model also predicts that if one were able to hydrate the double diamond cubic to high water volume fractions, one should destabilize the phase with respect to the primitive cubic. We have found that such highly swollen metastable bicontinuous cubic phases can be formed within onion vesicles. Data from monoelaidin in excess water display a well-defined transition, with the primitive cubic appearing above a water volume fraction of 0.75. Both of

  20. Influence of ion/atom arrival ratio on structure and optical properties of AlN films by ion beam assisted deposition

    Energy Technology Data Exchange (ETDEWEB)

    Meng, Jian-ping [Department of Energy Material and Technology, General Research Institute for Nonferrous Metals, Beijing 100088 (China); School of Engineering and Technology, China University of Geosciences, Beijing 100083 (China); Fu, Zhi-qiang, E-mail: fuzq@cugb.edu.cn [School of Engineering and Technology, China University of Geosciences, Beijing 100083 (China); Liu, Xiao-peng [Department of Energy Material and Technology, General Research Institute for Nonferrous Metals, Beijing 100088 (China); Yue, Wen; Wang, Cheng-biao [School of Engineering and Technology, China University of Geosciences, Beijing 100083 (China)

    2014-10-30

    Highlights: • AlN films were fabricated by dual ion beam sputtering. • Chemical bond status and phase composition of the films were studied by XPS and XRD. • Optical constants were measured by spectroscopic ellipsometry. • Influence of ion/atom arrival ratio on the films was studied. - Abstract: In order to improve the optical properties of AlN films, the influence of the ion/atom arrival ratio on the structure and optical characteristics of AlN films deposited by dual ion beam sputtering was studied by using X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, spectroscopic ellipsometry and UV–vis spectroscopy. The films prepared at the ion/atom arrival ratio of 1.4 are amorphous while the crystalline quality is improved with the increase of the ion/atom arrival ratio. The films deposited at the ion/atom arrival ratio of no less than 1.8 have an approximately stoichiometric ratio and mainly consist of aluminum nitride with little aluminum oxynitride, while metallic aluminum component appears in the films deposited at the ion/atom arrival ratio of 1.4. When the ion/atom arrival ratio is not less than 1.8, films are smooth, high transmitting and dense. The films prepared with high ion/atom arrival ratio (≥1.8) display the characteristic of a dielectric. The films deposited at the ion/atom arrival ratio of 1.4 are coarse, opaque and show characteristic of cermet.

  1. Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer.

    Science.gov (United States)

    Qian, Qingkai; Li, Baikui; Hua, Mengyuan; Zhang, Zhaofu; Lan, Feifei; Xu, Yongkuan; Yan, Ruyue; Chen, Kevin J

    2016-06-09

    Transistors based on MoS2 and other TMDs have been widely studied. The dangling-bond free surface of MoS2 has made the deposition of high-quality high-k dielectrics on MoS2 a challenge. The resulted transistors often suffer from the threshold voltage instability induced by the high density traps near MoS2/dielectric interface or inside the gate dielectric, which is detrimental for the practical applications of MoS2 metal-oxide-semiconductor field-effect transistor (MOSFET). In this work, by using AlN deposited by plasma enhanced atomic layer deposition (PEALD) as an interfacial layer, top-gate dielectrics as thin as 6 nm for single-layer MoS2 transistors are demonstrated. The AlN interfacial layer not only promotes the conformal deposition of high-quality Al2O3 on the dangling-bond free MoS2, but also greatly enhances the electrical stability of the MoS2 transistors. Very small hysteresis (ΔVth) is observed even at large gate biases and high temperatures. The transistor also exhibits a low level of flicker noise, which clearly originates from the Hooge mobility fluctuation instead of the carrier number fluctuation. The observed superior electrical stability of MoS2 transistor is attributed to the low border trap density of the AlN interfacial layer, as well as the small gate leakage and high dielectric strength of AlN/Al2O3 dielectric stack.

  2. Radiation response of cubic mesoporous silicate and borosilicate thin films

    Science.gov (United States)

    Manzini, Ayelén; Alurralde, Martín; Luca, Vittorio

    2018-01-01

    The radiation response has been studied of cubic mesoporous silicate and borosilicate thin films having different boron contents prepared using the block copolymer template Brij 58 and the dip coating technique. The degree of pore ordering of the films was analysed using low-angle X-ray diffraction and film thickness measured by X-ray reflectivity. For films calcined at 350 °C, the incorporation of boron resulted in a reproducible oscillatory variation in the d-spacing and intensity of the primary reflection as a function of boron content. A clear peak was observed in the d-spacing at 5-10 mol% boron incorporation. For borosilicate films of a given composition an overall suppression of d-spacing was observed as a function of aging time relative to films that did not contain boron. This was ascribed to a slow condensation process. The films were irradiated in pile with neutrons and with iodine ions at energies of 180 keV and 70 MeV. Neutron irradiation of the silicate thin films for periods up to 30 days and aged for 400 days resulted in little reduction in either d-spacing or intensity of the primary low-angle X-ray reflection indicating that the films retained their mesopore ordering. In contrast borosilicate films for which the B (n, α) reaction was expected to result in enhanced displacement damage showed much larger variations in X-ray parameters. For these films short irradiation times resulted in a reduction of the d-spacing and intensity of the primary reflections considerably beyond that observed through aging. It is concluded that prolonged neutron irradiation and internal α irradiation have only a small, although measurable, impact on mesoporous borosilicate thin films increasing the degree of condensation and increasing unit cell contraction. When these borosilicate films were irradiated with iodine ions, more profound changes occurred. The pore ordering of the films was significantly degraded when low energy ions were used. In some cases the degree

  3. Study of the cubic - to - monoclinic transformation in magnesia partially stabilized zirconia

    International Nuclear Information System (INIS)

    Muccillo, R.

    1988-01-01

    The transformation of the cubic phase to the stable monoclinic phase in ZrO 2 : 3%MgO quenched from 1450 0 C to RT has been studied by X-ray diffractometry in order to explain the thermal hysteresis in the electrical conductivity. The monoclinic-to-cubic ratio has been measured for samples annealed in the 500 0 C-1000 0 C temperature range. The results show that the decrease in the cubic phase content is the main responsible for the thermal hysteresis in the electrical conductivity of the magnesia partially stabilized zirconia solid electrolytes. (author) [pt

  4. P-union and P-intersection of neutrosophic cubic sets

    OpenAIRE

    Florentin Smarandache; Chang Su Kim

    2015-01-01

    Conditions for the P-intersection and P-intersection of falsity-external (resp. indeterminacy-external and truth-external) neutrosophic cubic sets to be an falsity-external (resp. indeterminacy-external and truth- external) neutrosophic cubic set are provided. Conditions for the P-union and the P-intersection of two truth-external (resp. indeterminacy-external and falsity-external) neutrosophic cubic sets to be a truth-internal (resp. indeterminacy-internal and falsity-internal) neutrosoph...

  5. Structural study on cubic-tetragonal transition of CH3NH3PbI3

    International Nuclear Information System (INIS)

    Kawamura, Yukihiko; Mashiyama, Hiroyuki; Hasebe, Katsuhiko

    2002-01-01

    The cubic-tetragonal phase transition of CH 3 NH 3 PbI 3 was investigated by single crystal X-ray diffractometry. The crystal structure was refined at five temperatures in the tetragonal phase. The PbI 6 octahedron rotates around the c-axis alternatively to construct the SrTiO 3 -type tetragonal structure. A methylammonium ion is partially ordered; 24 disordered states in the cubic phase are reduced to 8. With decreasing temperature, the rotation angle of the octahedron increases monotonically, which indicates it is an order parameter of the cubic-tetragonal transition. (author)

  6. d and f electrons in a qp-quantized cubical field

    International Nuclear Information System (INIS)

    Kibler, M.; Sztucki, J.

    1993-03-01

    A procedure for qp-quantizing a crystal-field potential V with an arbitrary symmetry G is developed. Such a procedure is applied to the case where V involves cubic components (G=0) of the degrees 4 and 6. This case corresponds to d and f electrons in a qp-quantized cubical potential. It is shown that the qp-quantization of the considered cubical potential is equivalent to a symmetry breaking of type O→D 4 . A general conjecture about this symmetry breaking phenomenon is given. (author) 21 refs

  7. Use of the Primitive Unit Cell in Understanding Subtle Features of the Cubic Closest-Packed Structure

    Science.gov (United States)

    Hawkins, John A.; Rittenhouse, Jeffrey L.; Soper, Linda M.; Rittenhouse, Robert C.

    2008-01-01

    One of the most important crystal structures adopted by metals is characterized by the "abcabc"...stacking of close-packed layers. This structure is commonly referred to in textbooks as the cubic close-packed (ccp) or face-centered cubic (fcc) structure, since the entire lattice can be generated by replication of a face-centered cubic unit cell…

  8. TNF-α decreases VEGF secretion in highly polarized RPE cells but increases it in non-polarized RPE cells related to crosstalk between JNK and NF-κB pathways.

    Directory of Open Access Journals (Sweden)

    Hiroto Terasaki

    Full Text Available Asymmetrical secretion of vascular endothelial growth factor (VEGF by retinal pigment epithelial (RPE cells in situ is critical for maintaining the homeostasis of the retina and choroid. VEGF is also involved in the development and progression of age-related macular degeneration (AMD. We studied the effect of tumor necrosis factor-α (TNF-α on the secretion of VEGF in polarized and non-polarized RPE cells (P-RPE cells and N-RPE cells, respectively in culture and in situ in rats. A subretinal injection of TNF-α caused a decrease in VEGF expression and choroidal atrophy. Porcine RPE cells were seeded on Transwell™ filters, and their maturation and polarization were confirmed by the asymmetrical VEGF secretion and trans electrical resistance. Exposure to TNF-α decreased the VEGF secretion in P-RPE cells but increased it in N-RPE cells in culture. TNF-α inactivated JNK in P-RPE cells but activated it in N-RPE cells, and TNF-α activated NF-κB in P-RPE cells but not in N-RPE cells. Inhibition of NF-κB activated JNK in both types of RPE cells indicating crosstalk between JNK and NF-κB. TNF-α induced the inhibitory effects of NF-κB on JNK in P-RPE cells because NF-κB is continuously inactivated. In N-RPE cells, however, it was not evident because NF-κB was already activated. The basic activation pattern of JNK and NF-κB and their crosstalk led to opposing responses of RPE cells to TNF-α. These results suggest that VEGF secretion under inflammatory conditions depends on cellular polarization, and the TNF-α-induced VEGF down-regulation may result in choroidal atrophy in polarized physiological RPE cells. TNF-α-induced VEGF up-regulation may cause neovascularization by non-polarized or non-physiological RPE cells.

  9. Explicit Gaussian quadrature rules for C^1 cubic splines with symmetrically stretched knot sequence

    KAUST Repository

    Ait-Haddou, Rachid; Barton, Michael; Calo, Victor M.

    2015-01-01

    We provide explicit expressions for quadrature rules on the space of C^1 cubic splines with non-uniform, symmetrically stretched knot sequences. The quadrature nodes and weights are derived via an explicit recursion that avoids an intervention

  10. Modeling the dispersion of atmospheric pollution using cubic splines and chapeau functions

    Energy Technology Data Exchange (ETDEWEB)

    Pepper, D W; Kern, C D; Long, P E

    1979-01-01

    Two methods that can be used to solve complex, three-dimensional, advection-diffusion transport equations are investigated. A quasi-Lagrangian cubic spline method and a chapeau function method are compared in advecting a passive scalar. The methods are simple to use, computationally fast, and reasonably accurate. Little numerical dissipation is manifested by the schemes. In simple advection tests with equal mesh spacing, the chapeau function method maintains slightly more accurate peak values than the cubic spline method. In tests with unequal mesh spacing, the cubic spline method has less noise, but slightly more damping than the standard chapeau method has. Both cubic splines and chapeau functions can be used to solve the three-dimensional problem of gaseous emissions dispersion without excessive programing complexity or storage requirements. (10 diagrams, 39 references, 2 tables)

  11. Unified treatment of coupled optical and acoustic phonons in piezoelectric cubic materials

    DEFF Research Database (Denmark)

    Willatzen, Morten; Wang, Zhong Lin

    2015-01-01

    A unified treatment of coupled optical and acoustic phonons in piezoelectric cubic materials is presented whereby the lattice displacement vector and the internal ionic displacement vector are found simultaneously. It is shown that phonon couplings exist in pairs only; either between the electric...... piezoelectricity in a cubic structured material slab. First, it is shown that isolated optical phonon modes generally cannot exist in piezoelectric cubic slabs. Second, we prove that confined acousto-optical phonon modes only exist for a discrete set of in-plane wave numbers in piezoelectric cubic slabs. Third...... potential and the lattice displacement coordinate perpendicular to the phonon wave vector or between the two other lattice displacement components. The former leads to coupled acousto-optical phonons by virtue of the piezoelectric effect. We then establish three new conjectures that entirely stem from...

  12. Physics and Technology of Transparent Ceramic Armor: Sintered Al2O3 vs Cubic Materials

    National Research Council Canada - National Science Library

    Krell, Andreas; Hutzler, Thomas; Klimke, Jens

    2006-01-01

    Sintered sub-micrometer alumina (alpha-Al2O3) is the hardest transparent armor. However, its trigonal structure gives rise to a strong thickness effect that makes thicker components translucent. Cubic ceramics (no birefringence...

  13. Effects of quadratic and cubic nonlinearities on a perfectly tuned parametric amplifier

    DEFF Research Database (Denmark)

    Neumeyer, Stefan; Sorokin, Vladislav; Thomsen, Jon Juel

    2016-01-01

    We consider the performance of a parametric amplifier with perfect tuning (two-to-one ratio between the parametric and direct excitation frequencies) and quadratic and cubic nonlinearities. A forced Duffing–Mathieu equation with appended quadratic nonlinearity is considered as the model system......, and approximate analytical steady-state solutions and corresponding stabilities are obtained by the method of varying amplitudes. Some general effects of pure quadratic, and mixed quadratic and cubic nonlinearities on parametric amplification are shown. In particular, the effects of mixed quadratic and cubic...... nonlinearities may generate additional amplitude–frequency solutions. In this case an increased response and a more phase sensitive amplitude (phase between excitation frequencies) is obtained, as compared to the case with either pure quadratic or cubic nonlinearity. Furthermore, jumps and bi...

  14. Energy landscape of defects in body-centered cubic metals

    International Nuclear Information System (INIS)

    Alexander, Rebecca

    2016-01-01

    The structural materials in nuclear reactors are subjected to severe irradiation conditions, leading to changes in their mechanical properties. The aging of these materials raises important issues such as those related to the safety of existing plants and future reactors. In many cases, materials with body-centered cubic bcc crystal structure are used with iron, tungsten, vanadium and tantalum as base metal. Collisions between irradiating particles and atoms constituting materials generate point defects whose migration leads to the formation of clusters responsible for aging. In this thesis, we studied the energetic properties of point defects in the bcc metals mentioned above at the atomic scale. Modeling point defects at the atomic scale can be achieved with different methods that differ only in the quality of the description of the interaction between atoms. Studies using accurate atomic interactions such ab initio calculations are computationally costly making it impossible to directly study clusters of large sizes. The modeling of atomic interactions using semi-empirical potentials reduces the reliability of predictive calculations but allow calculations for large-sized clusters. In this thesis we have developed a unique energy model for dislocation loops as well as for three-dimensional interstitial cluster of type C15. The resulting model has no size limit and can be set entirely by ab initio calculations. To test its robustness for large sizes of clusters we also set this model with semi-empirical potentials calculations and compared the predictions of the model to atomic simulations. With our development we have determined: (i) The relative stability of interstitial dislocation loops according to their Burgers vectors. (ii) The stability of the clusters C15 compared to the type of cluster loop. We showed that the C15 type clusters are more stable when they involve less than 41 interstitials in iron. (iii) In Ta we were able to show the same stability till

  15. Cubic and quartic planar differential systems with exact algebraic limit cycles

    Directory of Open Access Journals (Sweden)

    Ahmed Bendjeddou

    2011-01-01

    Full Text Available We construct cubic and quartic polynomial planar differential systems with exact limit cycles that are ovals of algebraic real curves of degree four. The result obtained for the cubic case generalizes a proposition of [9]. For the quartic case, we deduce for the first time a class of systems with four algebraic limit cycles and another for which nested configurations of limit cycles occur.

  16. Forbidden transitions in the EPR spectrum of the ferric ion cubic symmetry in magesium oxide

    Energy Technology Data Exchange (ETDEWEB)

    de Biasi, R S [Instituto Militar de Engenharia, Rio de Janeiro (Brazil). Secao de Engenharia e Ciencia dos Materiais

    1979-03-01

    The spectrum of the ..delta..m /sub s/=2 transitions of Fe/sup 3 +/ in cubic symmetry sites in MgO has been measured at 9.25GHz. The orientation dependence of the transitions is found to be consistent with a spin Hamiltonian of cubic symmetry with g=2.0037(isotropic), a=0.0205/sup +/-0.00005 cm/sup -1/.

  17. Investigation of Room Temperature Synthesis of Titanium Dioxide Nanoclusters Dispersed on Cubic MCM-48 Mesoporous Materials

    OpenAIRE

    Sridhar Budhi; Chia-Ming Wu; Dan Zhao; Ranjit T. Koodali

    2015-01-01

    Titania containing cubic MCM-48 mesoporous materials were synthesized successfully at room temperature by a modified Stöber method. The integrity of the cubic mesoporous phase was retained even at relatively high loadings of titania. The TiO2-MCM-48 materials were extensively characterized by a variety of physico-chemical techniques. The physico-chemical characterization indicate that Ti4+ ions can be substituted in framework tetrahedral positions. The relative amount of Ti4+ ions in tetrahe...

  18. On Application of Non-cubic EoS to Compositional Reservoir Simulation

    DEFF Research Database (Denmark)

    Yan, Wei; Michelsen, Michael Locht; Stenby, Erling Halfdan

    Compositional reservoir simulation uses almost exclusively cubic equations of state (EoS) such as the SRK EoS and the PR EoS. This is in contrast with process simulation in the downstream industry where more recent and advanced thermodynamic models are quickly adopted. Many of these models are non-cubic...... EoS, such as the PC-SAFT EoS. A major reason for the use of the conventional cubic EoS in reservoir simulation is the concern over computation time. Flash computation is the most time consuming part in compositional reservoir simulation, and the extra complexity of the non-cubic EoS may significantly...... increase the time consumption. In addition to this, the non-cubic EoS also needs a C7+ characterization. The main advantage of the non-cubic EoS is that it provides for a more accurate descrition of fluid properties, and it is therefore of interest to investigate the computational aspects of using...

  19. Electrochemical properties and diffusion of a redox active surfactant incorporated in bicontinuous cubic and lamellar phase

    International Nuclear Information System (INIS)

    Kostela, J.; Elmgren, M.; Almgren, M.

    2005-01-01

    The objective of this study was to investigate the electrochemical behaviour of the divalent redox active surfactant, N-cetyl-N'-methylviologen (CMV), in bicontinuous cubic and lamellar phases. The liquid crystalline phases were prepared from the system glycerolmonooleate (GMO)-water (and brine)-cationic surfactant. A comparison of the phase behaviour of GMO with the monovalent cetyltrimethylammonium bromide (CTAB) and the divalent CMV surfactant showed that the surfactants gave about the same effect at the same surface charge density. The electrochemical measurements were made with a mixture of CTAB and CMV as the surfactant. Cyclic voltammetry was used to study the electrochemistry of CMV incorporated in the cubic and lamellar phases that were spread on a gold electrode. The E 0 -values in the cubic samples were more negative (-0.55 V versus SCE) than in the lamellar samples (-0.53 V versus SCE). This can be explained by the higher charge density in the lamellar phase. The diffusion coefficients were also measured in the cubic phase. The mass transport is slowed down about fifty times in the cubic phase compared to in the pure electrolyte. The concentration dependence on the diffusion coefficient was also investigated. No electron hopping could be observed, which suggest that diffusional movement of the redox probe is the main source of charge transport. By placing the samples on a conducting glass slide, spectroelectrochemical investigations were performed. In the lamellar phase strong dimerization was detected at high concentration of viologen, but much less in the cubic phase

  20. Indirect improvement of high temperature mechanical properties of a Mg-based alloy Elektron21 by addition of AlN nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Daudin, R. [Univ. Grenoble Alpes, CNRS, SIMaP, F-38000 Grenoble (France); Terzi, S. [European Space Agency, ESTEC, TEC-TS, EPN Campus, CS20156, 38042 Grenoble Cedex 9 (France); Mallmann, C. [Univ. Grenoble Alpes, CNRS, SIMaP, F-38000 Grenoble (France); Martín, R. Sánchez [IMDEA Materials Institute, Tecnogetafe C/ Eric Kandel, 2, 28906 Getafe, Madrid (Spain); Lhuissier, P. [Univ. Grenoble Alpes, CNRS, SIMaP, F-38000 Grenoble (France); Boller, E.; Pacureanu, A. [European Synchrotron Radiation Facility, 71 Avenue des Martyrs, 38000 Grenoble (France); Katsarou, L.; Dieringa, H. [Helmholtz-Zentrum Geesthacht, Magnesium Innovation Centre – MagIC, Max-Planck-Str. 1, 21502 Geesthacht (Germany); Salvo, L. [Univ. Grenoble Alpes, CNRS, SIMaP, F-38000 Grenoble (France)

    2017-03-14

    Magnesium being the lightest metal on earth used as a structural material, the design of the chemistry and the microstructures of Mg-based alloys has been developed over the years to always further ameliorate their mechanical properties. A supplementary option consists in adding ceramic nanoparticles to such alloys to design Mg-based metal matrix nanocomposites (MMNCs) displaying improvement of both strength and ductility. In practice however, careful attention is required to understand the fundamental mechanisms at the heart of the enhancement of these properties as they still remain quite uncertain and subjected to misleading interpretations. Here, high temperature (350 °C) strain rate jump tests in compression reveal an enhancement of 20–60% of the mechanical properties when AlN nano-particles are added to the Elektron21 alloy (Mg-2.8Nd-1.2Gd-0.4Zr-0.3Zn, in wt%). At the same time, nano-indentation investigations suppose that forest or Orowan strengthening, due to particles-dislocations interactions, is unlikely to occur. Instead, using complementary microstructural characterization techniques (scanning electron macroscopy, energy dispersive spectroscopy as well as micro- and nano-tomography), we show that AlN nano-particles physically and chemically interact with the alloy and modify the overall microstructure, in particular the intermetallic phase, at the origin of the improvement of the mechanical properties.