Metal Nitrides for Plasmonic Applications

DEFF Research Database (Denmark)

Naik, Gururaj V.; Schroeder, Jeremy; Guler, Urcan

2012-01-01

Metal nitrides as alternatives to metals such as gold could offer many advantages when used as plasmonic material. We show that transition metal nitrides can replace metals providing equally good optical performance for many plasmonic applications.......Metal nitrides as alternatives to metals such as gold could offer many advantages when used as plasmonic material. We show that transition metal nitrides can replace metals providing equally good optical performance for many plasmonic applications....

Nitridation and contrast of B4C/La interfaces and X-ray multilayer optics

NARCIS (Netherlands)

Tsarfati, T.; van de Kruijs, Robbert Wilhelmus Elisabeth; Zoethout, E.; Bijkerk, Frederik

2010-01-01

Chemical diffusion and interlayer formation in thin layers and at interfaces is of increasing influence in nanoscopic devices such as nano-electronics, magneto-optical storage and multilayer X-ray optics. We show that with the nitridation of reactive B4C/La interfaces, both the chemical and optical

Enhancement of thermal conductive pathway of boron nitride coated polymethylsilsesquioxane composite.

Science.gov (United States)

Kim, Gyungbok; Ryu, Seung Han; Lee, Jun-Tae; Seong, Ki-Hun; Lee, Jae Eun; Yoon, Phil-Joong; Kim, Bum-Sung; Hussain, Manwar; Choa, Yong-Ho

2013-11-01

We report here in the fabrication of enhanced thermal conductive pathway nanocomposites of boron nitride (BN)-coated polymethylsilsesquioxane (PMSQ) composite beads using isopropyl alcohol (IPA) as a mixing medium. Exfoliated and size-reduced boron nitride particles were successfully coated on the PMSQ beads and explained by surface charge differences. A homogeneous dispersion and coating of BN on the PMSQ beads using IPA medium was confirmed by SEM. Each condition of the composite powder was carried into the stainless still mould and then hot pressed in an electrically heated hot press machine. Three-dimensional percolation networks and conductive pathways created by exfoliated BN were precisely formed in the nanocomposites. The thermal conductivity of nanocomposites was measured by multiplying specific gravity, specific heat, and thermal diffusivity, based upon the laser flash method. Densification of the composite resulted in better thermal properties. For an epoxy reinforced composite with 30 vol% BN and PMSQ, a thermal conductivity of nine times higher than that of pristine PMSQ was observed.

Thermal conductivity of polymer composites with oriented boron nitride

International Nuclear Information System (INIS)

Ahn, Hong Jun; Eoh, Young Jun; Park, Sung Dae; Kim, Eung Soo

2014-01-01

Highlights: • Thermal conductivity depended on the orientation of BN in the polymer matrices. • Hexagonal boron nitride (BN) particles were treated by C 27 H 27 N 3 O 2 and C 14 H 6 O 8 . • Amphiphilic-agent-treated BN particles are more easily oriented in the composite. • BN/PVA composites with C 14 H 6 O 8 -treated BN showed the highest thermal conductivity. • Thermal conductivity of the composites was compared with several theoretical models. - Abstract: Thermal conductivity of boron nitride (BN) with polyvinyl alcohol (PVA) and/or polyvinyl butyral (PVB) was investigated as a function of the degree of BN orientation, the numbers of hydroxyl groups in the polymer matrices and the amphiphilic agents used. The composites with in-plane orientation of BN showed a higher thermal conductivity than the composites with out-of-plane orientation of BN due to the increase of thermal pathway. For a given BN content, the composites with in-plane orientation of BN/PVA showed higher thermal conductivity than the composites with in-plane orientation of BN/PVB. This result could be attributed to the improved degree of orientation of BN, caused by a larger number of hydroxyl groups being present. Those treated with C 14 H 6 O 8 amphiphilic agent demonstrated a higher thermal conductivity than those treated by C 27 H 27 N 3 O 2 . The measured thermal conductivity of the composites was compared with that predicted by the several theoretical models

Titanium Matrix Composite Ti/TiN Produced by Diode Laser Gas Nitriding

Directory of Open Access Journals (Sweden)

Aleksander Lisiecki

2015-01-01

Full Text Available A high power direct diode laser, emitting in the range of near infrared radiation at wavelength 808–940 nm, was applied to produce a titanium matrix composite on a surface layer of titanium alloy Ti6Al4V by laser surface gas nitriding. The nitrided surface layers were produced as single stringer beads at different heat inputs, different scanning speeds, and different powers of laser beam. The influence of laser nitriding parameters on the quality, shape, and morphology of the surface layers was investigated. It was found that the nitrided surface layers consist of titanium nitride precipitations mainly in the form of dendrites embedded in the titanium alloy matrix. The titanium nitrides are produced as a result of the reaction between molten Ti and gaseous nitrogen. Solidification and subsequent growth of the TiN dendrites takes place to a large extent at the interface of the molten Ti and the nitrogen gas atmosphere. The direction of TiN dendrites growth is perpendicular to the surface of molten Ti. The roughness of the surface layers depends strongly on the heat input of laser nitriding and can be precisely controlled. In spite of high microhardness up to 2400 HV0.2, the surface layers are crack free.

Optical characterization of gallium nitride

NARCIS (Netherlands)

Kirilyuk, Victoria

2002-01-01

Group III-nitrides have been considered a promising system for semiconductor devices since a few decades, first for blue- and UV-light emitting diodes, later also for high-frequency/high-power applications. Due to the lack of native substrates, heteroepitaxially grown III-nitride layers are usually

Metallurgical response of an AISI 4140 steel to different plasma nitriding gas mixtures

Directory of Open Access Journals (Sweden)

Adão Felipe Oliveira Skonieski

2013-01-01

Full Text Available Plasma nitriding is a surface modification process that uses glow discharge to diffuse nitrogen atoms into the metallic matrix of different materials. Among the many possible parameters of the process, the gas mixture composition plays an important role, as it impacts directly the formed layer's microstructure. In this work an AISI 4140 steel was plasma nitrided under five different gas compositions. The plasma nitriding samples were characterized using optical and scanning electron microscopy, microhardness test, X-ray diffraction and GDOES. The results showed that there are significant microstructural and morphological differences on the formed layers depending on the quantity of nitrogen and methane added to the plasma nitriding atmosphere. Thicknesses of 10, 5 and 2.5 µm were obtained when the nitrogen content of the gas mixtures were varied. The possibility to obtain a compound layer formed mainly by γ'-Fe4N nitrides was also shown. For all studied plasma nitriding conditions, the presence of a compound layer was recognized as being the responsible to hinder the decarburization on the steel surface. The highest value of surface hardness - 1277HV - were measured in the sample which were nitrided with 3vol.% of CH4.

Modelling the evolution of composition-and stress-depth profiles in austenitic stainless steels during low-temperature nitriding

DEFF Research Database (Denmark)

Jespersen, Freja Nygaard; Hattel, Jesper Henri; Somers, Marcel A. J.

2016-01-01

. In the present paper solid mechanics was combined with thermodynamics and diffusion kinetics to simulate the evolution of composition-depth and stress-depth profiles resulting from nitriding. The model takes into account a composition-dependent diffusion coefficient of nitrogen in expanded austenite, short range......Nitriding of stainless steel causes a surface zone of expanded austenite, which improves the wear resistance of the stainless steel while preserving the stainless behaviour. During nitriding huge residual stresses are introduced in the treated zone, arising from the volume expansion...... that accompanies the dissolution of high nitrogen contents in expanded austenite. An intriguing phenomenon during low-temperature nitriding is that the residual stresses evoked by dissolution of nitrogen in the solid state, affect the thermodynamics and the diffusion kinetics of nitrogen dissolution...

Effect of cold working on nitriding process of AISI 304 and 316 austenitic stainless steel

International Nuclear Information System (INIS)

Pereira, Silvio Andre de Lima

2012-01-01

The nitriding behavior of AISI 304 and 316 austenitic stainless steel was studied by different cold work degree before nitriding processes. The microstructure, thickness, microhardness and chemical micro-composition were evaluated through optical microscopy, microhardness, scanner electronic microscopy and x ray diffraction techniques. Through them, it was observed that previous plastic deformations do not have influence on layer thickness. However, a nitrided layer thicker can be noticed in the AISI 304 steel. In addition, two different layers can be identified as resulted of the nitriding, composed for austenitic matrix expanded by nitrogen atoms and another thinner immediately below expanded by Carbon atoms. (author)

Low Working-Temperature Acetone Vapor Sensor Based on Zinc Nitride and Oxide Hybrid Composites.

Science.gov (United States)

Qu, Fengdong; Yuan, Yao; Guarecuco, Rohiverth; Yang, Minghui

2016-06-01

Transition-metal nitride and oxide composites are a significant class of emerging materials that have attracted great interest for their potential in combining the advantages of nitrides and oxides. Here, a novel class of gas sensing materials based on hybrid Zn3 N2 and ZnO composites is presented. The Zn3 N2 /ZnO (ZnNO) composites-based sensor exhibits selectivity and high sensitivity toward acetone vapor, and the sensitivity is dependent on the nitrogen content of the composites. The ZnNO-11.7 described herein possesses a low working temperature of 200 °C. The detection limit (0.07 ppm) is below the diabetes diagnosis threshold (1.8 ppm). In addition, the sensor shows high reproducibility and long-term stability. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Nitride alloy layer formation of duplex stainless steel using nitriding process

Science.gov (United States)

Maleque, M. A.; Lailatul, P. H.; Fathaen, A. A.; Norinsan, K.; Haider, J.

2018-01-01

Duplex stainless steel (DSS) shows a good corrosion resistance as well as the mechanical properties. However, DSS performance decrease as it works under aggressive environment and at high temperature. At the mentioned environment, the DSS become susceptible to wear failure. Surface modification is the favourable technique to widen the application of duplex stainless steel and improve the wear resistance and its hardness properties. Therefore, the main aim of this work is to nitride alloy layer on the surface of duplex stainless steel by the nitriding process temperature of 400°C and 450°C at different time and ammonia composition using a horizontal tube furnace. The scanning electron microscopy and x-ray diffraction analyzer are used to analyse the morphology, composition and the nitrided alloy layer for treated DSS. The micro hardnesss Vickers tester was used to measure hardness on cross-sectional area of nitrided DSS. After nitriding, it was observed that the hardness performance increased until 1100 Hv0.5kgf compared to substrate material of 250 Hv0.5kgf. The thickness layer of nitride alloy also increased from 5μm until 100μm due to diffusion of nitrogen on the surface of DSS. The x-ray diffraction results showed that the nitride layer consists of iron nitride, expanded austenite and chromium nitride. It can be concluded that nitride alloy layer can be produced via nitriding process using tube furnace with significant improvement of microstructural and hardness properties.

Optical properties of aluminum nitride thin films grown by direct-current magnetron sputtering close to epitaxy

Energy Technology Data Exchange (ETDEWEB)

Stolz, A. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Soltani, A., E-mail: ali.soltani@iemn.univ-lille1.fr [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Abdallah, B. [Department of Materials Physics, Atomic Energy Commission of Syria, Damascus, P.O. Box 6091 (Syrian Arab Republic); Charrier, J. [Fonctions Optiques pour les Technologies de l' informatiON (FOTON), UMR CNRS 6082, 6, rue de Kerampont CS 80518, 22305 Lannion Cedex (France); Deresmes, D. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Jouan, P.-Y.; Djouadi, M.A. [Institut des Matériaux Jean Rouxel – IMN, UMR CNRS 6502, 2, rue de la Houssinère BP 32229, 44322 Nantes (France); Dogheche, E.; De Jaeger, J.-C. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France)

2013-05-01

Low-temperature Aluminum Nitride (AlN) thin films with a thickness of 3 μm were deposited by Direct-Current magnetron sputtering on sapphire substrate. They present optical properties similar to those of epitaxially grown films. Different characterization methods such as X-Ray Diffraction, Transmission Electron Microscopy and Atomic Force Microscopy were used to determine the structural properties of the films such as its roughness and crystallinity. Newton interferometer was used for stress measurement of the films. Non-destructive prism-coupling technique was used to determine refractive index and thickness homogeneity by a mapping on the whole sample area. Results show that AlN films grown on AlGaN layer have a high crystallinity close to epitaxial films, associated to a low intrinsic stress for low thickness. These results highlight that it is possible to grow thick sample with microstructure and optical properties close to epitaxy, even on a large surface. - Highlights: ► Aluminum Nitride sputtering technique with a low temperature growth process ► Epitaxial quality of two microns sputtered Aluminum Nitride film ► Optics as a non-destructive accurate tool for acoustic wave investigation.

Transient Nonlinear Optical Properties of Thin Film Titanium Nitride

Science.gov (United States)

2017-03-23

13] • Chemical composition • Crystal structure and lattice parameters • Defect structure This tuneability will be useful in future engineering ...Nitride SarahKatie Thomas Follow this and additional works at: https://scholar.afit.edu/etd Part of the Materials Science and Engineering Commons This... Thesis is brought to you for free and open access by AFIT Scholar. It has been accepted for inclusion in Theses and Dissertations by an authorized

Tuning the optical response in carbon doped boron nitride nanodots

KAUST Repository

Mokkath, Junais Habeeb

2014-09-04

Time dependent density functional theory and the hybrid B3LYP functional are used to investigate the structural and optical properties of pristine and carbon doped hexagonal boron nitride nanodots. In agreement with recent experiments, the embedded carbon atoms are found to favor nucleation. Our results demonstrate that carbon clusters of different shapes promote an early onset of absorption by generating in-gap states. The nanodots are interesting for opto-electronics due to their tunable optical response in a wide energy window. We identify cluster sizes and shapes with optimal conversion efficiency for solar radiation and a wide absorption range form infrared to ultraviolet. This journal is

Discontinuous precipitation in a nickel-free high nitrogen austenitic stainless steel on solution nitriding

DEFF Research Database (Denmark)

Mohammadzadeh, Roghayeh; Akbari, Alireza; Grumsen, Flemming Bjerg

2017-01-01

Chromium-rich nitride precipitates in production of nickel-free austenitic stainless steel plates via pressurised solution nitriding of Fe–22.7Cr–2.4Mo ferritic stainless steel at 1473 K (1200 °C) under a nitrogen gas atmosphere was investigated. The microstructure, chemical and phase composition......, morphology and crystallographic orientation between the resulted austenite and precipitates were investigated using optical microscopy, X-ray Diffraction (XRD), Scanning and Transmission Electron Microscopy (TEM) and Electron Back Scatter Diffraction (EBSD). On prolonged nitriding, Chromium-rich nitride...... precipitates were formed firstly close to the surface and later throughout the sample with austenitic structure. Chromium-rich nitride precipitates with a rod or strip-like morphology was developed by a discontinuous cellular precipitation mechanism. STEM-EDS analysis demonstrated partitioning of metallic...

Effects of Interface Coating and Nitride Enhancing Additive on Properties of Hi-Nicalon SiC Fiber Reinforced Reaction-Bonded Silicon Nitride Composites

Science.gov (United States)

Bhatt, Ramakrishana T.; Hull, David R.; Eldridge, Jeffrey I.; Babuder, Raymond

2000-01-01

Strong and tough Hi-Nicalon SiC fiber reinforced reaction-bonded silicon nitride matrix composites (SiC/ RBSN) have been fabricated by the fiber lay-up approach. Commercially available uncoated and PBN, PBN/Si-rich PBN, and BN/SiC coated SiC Hi-Nicalon fiber tows were used as reinforcement. The composites contained approximately 24 vol % of aligned 14 micron diameter SiC fibers in a porous RBSN matrix. Both one- and two-dimensional composites were characterized. The effects of interface coating composition, and the nitridation enhancing additive, NiO, on the room temperature physical, tensile, and interfacial shear strength properties of SiC/RBSN matrix composites were evaluated. Results indicate that for all three coated fibers, the thickness of the coatings decreased from the outer periphery to the interior of the tows, and that from 10 to 30 percent of the fibers were not covered with the interface coating. In the uncoated regions, chemical reaction between the NiO additive and the SiC fiber occurs causing degradation of tensile properties of the composites. Among the three interface coating combinations investigated, the BN/SiC coated Hi-Nicalon SiC fiber reinforced RBSN matrix composite showed the least amount of uncoated regions and reasonably uniform interface coating thickness. The matrix cracking stress in SiC/RBSN composites was predicted using a fracture mechanics based crack bridging model.

Self-assembly of graphitic carbon nitride nanosheets–carbon nanotube composite for electrochemical simultaneous determination of catechol and hydroquinone

International Nuclear Information System (INIS)

Zhang, Hanqiang; Huang, Yihong; Hu, Shirong; Huang, Qitong; Wei, Chan; Zhang, Wuxiang; Yang, Weize; Dong, Peihui; Hao, Aiyou

2015-01-01

Graphical abstract: Schematic diagram of hydrothermal synthesis graphitic carbon nitride nanosheets-carbon nanotube composite and theirs application for electrochemical sensing catechol and hydroquinone. - Highlights: • Self-assembly of graphitic carbon nitride nanosheets-carbon nanotube composite. • CNNS-CNT show more stronger conductivity than CNNS and CNT. • CNNS-CNT has been performed for detection of catechol and hydroquinone. • The probe was applied to detect practical samples with satisfactory results. - Abstract: In this paper, three-dimensional (3D) graphitic carbon nitride nanosheets-carbon nanotube (CNNS-CNT) composite was synthesized via hydrothermal reaction of 2D CNNS and 1D CNT-COOH by π-π stacking and electrostatic interactions. This CNNS-CNT composite was characterized by transmission electron microscope, scanning electron microscope, x-ray diffraction and fourier-transform infrared. In addition, the CNNS-CNT composite displayed excellent conductivity comparing with CNNS and CNT-COOH monomer. This composite was applied for electrochemical simultaneous determination of catechol (CC) and hydroquinone (HQ) with good sensitivity, wide linear range and low detection limit. In addition, this CNNS-CNT composite modified electrode was also applied to detect practical samples with satisfactory results

Large-scale fabrication and utilization of novel hexagonal/turbostratic composite boron nitride nanosheets

KAUST Repository

Zhong, Bo

2017-02-15

In this report, we have developed a scalable approach to massive synthesis of hexagonal/turbostratic composite boron nitride nanosheets (h/t-BNNSs). The strikingly effective, reliable, and high-throughput (grams) synthesis is performed via a facile chemical foaming process at 1400°C utilizing ammonia borane (AB) as precursor. The characterization results demonstrate that high quality of h/t-BNNSs with lateral size of tens of micrometers and thickness of tens of nanometers are obtained. The growth mechanism of h/t-BNNSs is also discussed based on the thermogravimetric analysis of AB which clearly shows two step weight loss. The h/t-BNNSs are further used for making thermoconductive h/t-BNNSs/epoxy resin composites. The thermal conductivity of the composites is obviously improved due to the introduction of h/t-BNNSs. Consideration of the unique properties of boron nitride, these novel h/t-BNNSs are envisaged to be very valuable for future high performance polymer based material fabrication.

Investigations on the structural and optical properties of sphere-shaped indium nitride (InN)

Energy Technology Data Exchange (ETDEWEB)

Bagavath, C.; Kumar, J. [Anna University, Crystal Growth Centre, Chennai, Tamil Nadu (India); Nasi, L. [IMEM-CNR, Parma (Italy)

2017-04-15

Indium nitride (InN) sphere-shaped micro crystals and nano crystals were made using sol-gel method. The crystalline size of the samples were calculated using X-ray diffraction, which were found to increase with the increase of nitridation temperature and time. High resolution-transmission electron microscopy images exhibited the distinct sphere shape of InN with different size of micro and nanometers. The calculated band gap of InN spheres using photo luminescence and UV-visible absorption spectra, was found to be 1.2 eV. Optical phonon modes of InN were determined from micro-Raman studies. (orig.)

Colloidal Plasmonic Titanium Nitride Nanoparticles: Properties and Applications

DEFF Research Database (Denmark)

Guler, Urcan; Suslov, Sergey; Kildishev, Alexander V.

2015-01-01

Optical properties of colloidal plasmonic titanium nitride nanoparticles are examined with an eye on their photothermal and photocatalytic applications via transmission electron microscopy and optical transmittance measurements. Single crystal titanium nitride cubic nanoparticles with an average ...

Preparation and thermal properties of polyacrylonitrile/hexagonal boron nitride composites

International Nuclear Information System (INIS)

Madakbaş, Seyfullah; Çakmakçı, Emrah; Kahraman, Memet Vezir

2013-01-01

Highlights: ► PAN/h-BN composites with improved thermal stability were prepared. ► Thermal properties of composites were analysed by TGA and DSC. ► Flame retardancy of the composites increased up to 27%. - Abstract: Polyacrylonitrile is a thermoplastic polymer with unique properties and it has several uses. However its flammability is a major drawback for certain applications. In this study it was aimed to prepare polyacrylonitrile (PAN)/hexagonal boron nitride (h-BN) composites with improved flame retardancy and thermal stability. Chemical structures of the composites were characterized by FTIR analysis. Thermal properties of these novel composites were analysed by TGA and DSC measurements. Glass transition temperatures and char yields increased with increasing h-BN percentage. Flame retardancy of the PAN composite materials improved with the addition of h-BN and the LOI value reached to 27% from 18%. Furthermore, the surface morphology of the composites was investigated by SEM analysis.

Optical properties of indium nitride films

International Nuclear Information System (INIS)

Tyagaj, V.A.; Evstigneev, A.M.; Krasiko, A.N.; Andreeva, A.F.; Malakhov, V.Ya.

1977-01-01

Reflection and transmission spectra of heavily doped indium nitride are studied at lambda=0.5-5 μm. Dispersion of the refractive index near the plasma resonance frequency, h.f. dielectric constant (epsilonsub(infinity)=9.3), and extinction coefficient near the transmission maximum of films have been determined from the analysis of interference pattern. The reflection spectrum exhibits maximum in the infrared range and optical effective mass is found through its position (msub(opt)*=0.11msub(0)). Free carrier absorption coefficient is shown to vary according to the law K approximately lambdasup(2.9+-0.1) which is characteristic of electron scattering by charged impurities. The analysis of absorption spectra near the threshold of interband transitions has lead to the conclusion that free carriers are localized in the lateral extremum of conduction band (or out of the center of the Brillouin zone), therefore the Burstein-Moss effect is absent

Microstructural characterization of an AISI-SAE 4140 steel without nitridation and nitrided

International Nuclear Information System (INIS)

Medina F, A.; Naquid G, C.

2000-01-01

It was micro structurally characterized an AISI-SAE 4140 steel before and after of nitridation through the nitridation process by plasma post-unloading microwaves through Optical microscopy (OM), Scanning electron microscopy (SEM) by means of secondary electrons and retrodispersed, X-ray diffraction (XRD), Energy dispersion spectra (EDS) and mapping of elements. (Author)

Optical properties of nitride nanostructures

Energy Technology Data Exchange (ETDEWEB)

Cantarero, A.; Cros, A.; Garro, N.; Gomez-Gomez, M.I.; Garcia, A.; Lima, M.M. de [Materials Science Institute, University of Valencia, PO Box 22085, 46071 Valencia (Spain); Daudin, B. [Departement de Recherche Fondamentale sur la Matiere Condensee, SPMM, CEA/Grenoble, 17 Rue des Martyrs, 38054 Grenoble (France); Rizzi, A.; Denker, C.; Malindretos, J. [IV. Physikalisches Institut, Georg August Universitaet Goettingen, 37073 Goettingen (Germany)

2011-01-15

In this paper we review some recent results on the optical properties of nitride nanostructures, in particular on GaN quantum dots (QDs) and InN nanocolumns (NCs). First, we will give a brief introduction on the particularities of vibrational modes of wurtzite. The GaN QDs, embedded in AlN, were grown by molecular beam epitaxy (MBE) in the Stransky-Krastanov mode on c- and a-plane 6H-SiC. We have studied the optical properties by means of photoluminescence (PL) and performed Raman scattering measurements to analyze the strain relaxation in the dots and the barrier, the effect of the internal electric fields, and the influence of specific growth parameters, like the influence of capping or the spacer on the relaxation of the QDs. A theoretical model, based on continuous elastic theory, were developed to interpret the Raman scattering results. On the other hand, InN NCs have been grown by MBE in the vapor-liquid-solid mode using Au as a catalyst. The nanocolumns have different morphology depending on the growth conditions. The optical properties can be correlated to the morphology of the samples and the best growth conditions can be selected. We observe, from the analysis of the Raman data in InN NCs, the existence of two space regions contributing to the scattering: the surface and the inner region. From the inner region, uncoupled phonon modes are clearly observed, showing the high crystal quality and the complete relaxation of the NCs (no strain). The observation of a LO-phonon-plasmon couple in the same spectra is a fingerprint of the accumulation layer predicted at the surface of the nanocolumns. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Optical and Temporal Carrier Dynamics Investigations of III-Nitrides for Semiconductor Lighting

KAUST Repository

Ajia, Idris A.

2018-05-22

III-nitride semiconductors suffer significant efficiency limitations; ‘efficiency’ being an umbrella term that covers an extensive list of challenges that must be overcome if they are to fulfil their vast potential. To this end, it is imperative to understand the underlying phenomena behind such limitations. In this dissertation, I combine powerful optical and structural characterization techniques to investigate the effect of different defects on the carrier dynamics in III-nitride materials for light emitting devices. The results presented herein will enhance the current understanding of the carrier mechanisms in such devices, which will lead to device efficiency improvements. In the first part of this dissertation, the effects of some important types of crystal defects present in III-nitride structures are investigated. Here, two types of defects are studied in two different III-nitride-based light emitting structures. The first defects of interest are V-pit defects in InGaN/GaN multiple quantum well (MQW) blue LEDs, where their contribution to the high-efficiency of such LEDs is discussed. In addition, the effect of these defects on the efficiency droop phenomenon in these LEDs is elucidated. Secondly, the optical effects of grain boundary defects in AlN-rich AlGaN/AlGaN MQWs is studied. In this study, it is shown that grain boundary defects may result in abnormal carrier localization behavior in these deep ultraviolet (UV) structures. While both defects are treated individually, it is evident from these studies that threading dislocation (TD) defects are an underlying contributor to the more undesirable outcomes of the said defects. In the second part, the dissertation reports on the carrier dynamics of III-nitride LED structures grown on emerging substrates—as possible efficiency enhancing techniques—aimed at mitigating the effects of TD defects. Thus, the carrier dynamics of GaN/AlGaN UV MQWs grown, for the first time, on (2̅01) – oriented β-Ga2O

Optical absorption of zigzag single walled boron nitride nanotubes

Science.gov (United States)

Moradian, Rostam; Chegel, Raad; Behzad, Somayeh

2010-11-01

In a realistic three-dimensional model, optical matrix element and linear optical absorption of zigzag single walled boron nitride nanotubes (BNNTs) in the tight binding approximation are studied. In terms of absolute value of dipole matrix elements of the first three direct transitions at kz=0, we divided the zigzag BNNTs into three groups and investigated their optical absorption spectrum in energy ranges E7.5 eV. We found that in lower energies, E7.5 eV, their behaviors depend on their even or odd nanotube index. We also found that in the energy range 7

Optical polarization based logic functions (XOR or XNOR) with nonlinear Gallium nitride nanoslab.

Science.gov (United States)

Bovino, F A; Larciprete, M C; Giardina, M; Belardini, A; Centini, M; Sibilia, C; Bertolotti, M; Passaseo, A; Tasco, V

2009-10-26

We present a scheme of XOR/XNOR logic gate, based on non phase-matched noncollinear second harmonic generation from a medium of suitable crystalline symmetry, Gallium nitride. The polarization of the noncollinear generated beam is a function of the polarization of both pump beams, thus we experimentally investigated all possible polarization combinations, evidencing that only some of them are allowed and that the nonlinear interaction of optical signals behaves as a polarization based XOR. The experimental results show the peculiarity of the nonlinear optical response associated with noncollinear excitation, and are explained using the expression for the effective second order optical nonlinearity in noncollinear scheme.

Thermochemical stability of zirconia-titanium nitride as mixed ionic-electronic composites

DEFF Research Database (Denmark)

Silva, P. S. M.; Esposito, V.; Marani, D.

2018-01-01

Dense zirconia (8% molar yttria-stabilized ZrO2)-titanium nitride (TiN) composites are fabricated to obtain mixed ionic-electronic conducting ceramic systems with high degree of electronic and thermal conductivity. The composites are consolidated by spark plasma sintering (SPS), starting from pure...... the composites, high electrical conductivity is attained. Samples exhibit metallic behavior, showing an unexpected percolation of TiN in the YSZ matrix for volume fraction ≤ 25 wt% (27 vol%). Chemical degradation and electrical properties of the compounds were monitored under oxidative (air) and inert (Ar...... transport properties of the composite can be tuned by both the relative volume fraction of phases and controlled oxidative treatments. Adjusting such parameters different electric behaviors were observed ranging from predominant electronic conductors, to temperature-independent resistivity...

Facile synthesis and enhanced visible-light photocatalysis of graphitic carbon nitride composite semiconductors.

Science.gov (United States)

Li, Huiquan; Liu, Yuxing; Gao, Xing; Fu, Cong; Wang, Xinchen

2015-04-13

The semiconductor heterojunction has been an effective architecture to enhance photocatalytic activity by promoting photogenerated charge separation. Here, graphitic carbon nitride (CN) and B-modified graphitic carbon nitride (CNB) composite semiconductors were fabricated by a facile calcination process using cheap, sustainable, and easily available sodium tetraphenylboron and urea as precursors. The synthetic CN-CNB-25 semiconductor with a suitable CNB content showed the highest visible-light activity. Its degradation ratio for methyl orange and phenol was more than twice that of CN and CNB and its H2 evolution rate was ∼3.4 and ∼1.8 times higher than that of CN and CNB, respectively. It also displayed excellent stability and reusability. The enhanced activity of CN-CNB-25 was attributed predominantly to the efficient separation of photoinduced electrons and holes. This paper describes a visible-light-responsive CN composite semiconductor with great potential in environmental and energy applications. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Second-harmonic generation in substoichiometric silicon nitride layers

Science.gov (United States)

Pecora, Emanuele; Capretti, Antonio; Miano, Giovanni; Dal Negro, Luca

2013-03-01

Harmonic generation in optical circuits offers the possibility to integrate wavelength converters, light amplifiers, lasers, and multiple optical signal processing devices with electronic components. Bulk silicon has a negligible second-order nonlinear optical susceptibility owing to its crystal centrosymmetry. Silicon nitride has its place in the microelectronic industry as an insulator and chemical barrier. In this work, we propose to take advantage of silicon excess in silicon nitride to increase the Second Harmonic Generation (SHG) efficiency. Thin films have been grown by reactive magnetron sputtering and their nonlinear optical properties have been studied by femtosecond pumping over a wide range of excitation wavelengths, silicon nitride stoichiometry and thermal processes. We demonstrate SHG in the visible range (375 - 450 nm) using a tunable 150 fs Ti:sapphire laser, and we optimize the SH emission at a silicon excess of 46 at.% demonstrating a maximum SHG efficiency of 4x10-6 in optimized films. Polarization properties, generation efficiency, and the second order nonlinear optical susceptibility are measured for all the investigated samples and discussed in terms of an effective theoretical model. Our findings show that the large nonlinear optical response demonstrated in optimized Si-rich silicon nitride materials can be utilized for the engineering of nonlinear optical functions and devices on a Si chip.

Improvement of Thermal and Electrical Conductivity of Epoxy/boron Nitride/silver Nanoparticle Composite

Energy Technology Data Exchange (ETDEWEB)

Kim, Seungyong; Lim, Soonho [Korea Institute of Science and Technology, Wanju (Korea, Republic of)

2017-06-15

In this study, we investigated the effect of BN (boron nitride) on the thermal and the electrical conductivity of composites. In case of epoxy/BN composites, the thermal conductivity was increased as the BN contents were increased. Epoxy/AgNP (Ag nanoparticle) nanocomposites exhibited a slight change of thermal conductivity and showed a electrical percolation threshold at 20 vol% of Ag nanoparticles. At the fixed Ag nanoparticle content below the electrical percolation threshold, increasing the amount of BN enhanced the electrical conductivity as well as thermal conductivity for the epoxy/AgNP/BN composites.

Fabrication and properties of graphene reinforced silicon nitride composite materials

International Nuclear Information System (INIS)

Yang, Yaping; Li, Bin; Zhang, Changrui; Wang, Siqing; Liu, Kun; Yang, Bei

2015-01-01

Silicon nitride (Si 3 N 4 ) ceramic composites reinforced with graphene platelets (GPLs) were prepared by hot pressed sintering and pressureless sintering respectively. Adequate intermixing of the GPLs and the ceramic powders was achieved in nmethyl-pyrrolidone (NMP) under ultrasonic vibration followed by ball-milling. The microstructure and phases of the Si 3 N 4 ceramic composites were investigated by Field Emission Scanning Electron Microscopy (SEM) and X-ray diffraction (XRD). The effects of GPLs on the composites' mechanical properties were analyzed. The results showed that GPLs were well dispersed in the Si 3 N 4 ceramic matrix. β-Si 3 N 4, O′-sialon and GPLs were present in the hot-pressed composites while pressureless sintered composites contain β-Si 3 N 4 , Si, SiC and GPLs. Graphene has the potential to improve the mechanical properties of both the hot pressed and pressureless sintered composites. Toughening effect of GPLs on the pressureless sintered composites appeared more effective than that on the hot pressed composites. Toughening mechanisms, such as pull-out, crack bridging and crack deflection induced by GPLs were observed in the composites prepared by the two methods

High Kinetic Energy Penetrator Shielding and High Wear Resistance Materials Fabricated with Boron Nitride Nanotubes (BNNTS) and BNNT Polymer Composites

Science.gov (United States)

Kang, Jin Ho (Inventor); Sauti, Godfrey (Inventor); Smith, Michael W. (Inventor); Jordan, Kevin C. (Inventor); Park, Cheol (Inventor); Bryant, Robert George (Inventor); Lowther, Sharon E. (Inventor)

2015-01-01

Boron nitride nanotubes (BNNTs), boron nitride nanoparticles (BNNPs), carbon nanotubes (CNTs), graphites, or combinations, are incorporated into matrices of polymer, ceramic or metals. Fibers, yarns, and woven or nonwoven mats of BNNTs are used as toughening layers in penetration resistant materials to maximize energy absorption and/or high hardness layers to rebound or deform penetrators. They can be also used as reinforcing inclusions combining with other polymer matrices to create composite layers like typical reinforcing fibers such as Kevlar.RTM., Spectra.RTM., ceramics and metals. Enhanced wear resistance and usage time are achieved by adding boron nitride nanomaterials, increasing hardness and toughness. Such materials can be used in high temperature environments since the oxidation temperature of BNNTs exceeds 800.degree. C. in air. Boron nitride based composites are useful as strong structural materials for anti-micrometeorite layers for spacecraft and space suits, ultra strong tethers, protective gear, vehicles, helmets, shields and safety suits/helmets for industry.

Deformation potentials in AlGaN and InGaN alloys and their impact on optical polarization properties of nitride quantum wells

DEFF Research Database (Denmark)

Łepkowski, S. P.; Gorczyca, I.; Stefańska-Skrobas, K.

2013-01-01

The deformation potentials acz−D1, act−D2, D3, D4, and D5 are determined for random AlGaN and InGaN alloys using electronic band structure calculations based on the density functional theory. A sublinear composition dependence is obtained for acz−D1 and D3 in AlGaN, and D3 in InGaN, whereas...... superlinear behavior on composition is found foract−D2, D4, and D5 in AlGaN, and act−D2and D5 in InGaN. The optical polarization properties of nitride quantum wells are very well described by the k·p method when the obtained deformation potentials are included. In m-plane AlGaN/AlN and InGaN/GaN quantum wells...

Fabrication and properties of ceramic composites with a boron nitride matrix

International Nuclear Information System (INIS)

Kim, D.P.; Cofer, C.G.; Economy, J.

1995-01-01

Boron nitride (BN) matrix composites reinforced by a number of different ceramic fibers have been prepared using a low-viscosity, borazine oligomer which converts in very high yield to a stable BN matrix when heated to 1,200 C. Fibers including Nicalon (SiC), FP (Al 2 O 3 ), Sumica and Nextel 440 (Al 2 O 3 -SiO 2 ) were evaluated. The Nicalon/BN and Sumica/BN composites displayed good flexural strengths of 380 and 420 MPa, respectively, and modulus values in both cases of 80 GPa. On the other hand, FP/BN and Nextel/BN composites exhibited very brittle behavior. Nicalon fiber with a carbon coating as a buffer barrier improved the strength by 30%, with a large amount of fiber pullout from the BN matrix. In all cases except for Nicalon, the composites showed low dielectric constant and loss

High performance corrosion and wear resistant composite titanium nitride layers produced on the AZ91D magnesium alloy by a hybrid method

Directory of Open Access Journals (Sweden)

Michał Tacikowski

2014-09-01

Full Text Available Composite, diffusive titanium nitride layers formed on a titanium and aluminum sub-layer were produced on the AZ91D magnesium alloy. The layers were obtained using a hybrid method which combined the PVD processes with the final sealing by a hydrothermal treatment. The microstructure, resistance to corrosion, mechanical damage, and frictional wear of the layers were examined. The properties of the AZ91D alloy covered with these layers were compared with those of the untreated alloy and of some engineering materials such as 316L stainless steel, 100Cr6 bearing steel, and the AZ91D alloy subjected to commercial anodizing. It has been found that the composite diffusive nitride layer produced on the AZ91D alloy and then sealed by the hydrothermal treatment ensures the corrosion resistance comparable with that of 316L stainless steel. The layers are characterized by higher electrochemical durability which is due to the surface being overbuilt with the titanium oxides formed, as shown by the XPS examinations, from titanium nitride during the hydrothermal treatment. The composite titanium nitride layers exhibit high resistance to mechanical damage and wear, including frictional wear which is comparable with that of 100Cr6 bearing steel. The performance properties of the AZ91D magnesium alloy covered with the composite titanium nitride coating are substantially superior to those of the alloy subjected to commercial anodizing which is the dominant technique employed in industrial practice.

Optical characterisation of III-V nitride-based multiphase and diluted magnetic semiconductors

International Nuclear Information System (INIS)

Wegscheider, M.

2009-01-01

The present work is devoted to the investigation of the optical properties of transition metal doped Gallium nitride. The Gallium nitride layers are epitaxially grown in a full metalorganic chemical vapour deposition process whereas the transition metals iron or manganese as well as the n and p-type dopants silicon and magnesium are incorporated simultaneously. Background and driving force of the realization of such material systems is basically the evocation of ferromagnetic spin alignment where free carriers ensure the correspondence between the localized spin state provided by the metal ions. The production of completely new devices for semiconductor industries based on the possibility to switch on or off the ferrimagnetic alignment by changing the free carrier concentration can be expected in the near future. In this context photoluminescence studies in the ultraviolet and mid infrared spectral range at temperatures between the liquid helium point and room temperature at atmospheric pressure were made. These measurements basically provide information on optical transitions between the conduction and valence band and deep defects as well as on crystal field forced transitions within the d-orbitals of the metal ion involved. In this context valuable knowledge could have been gained on doping concentrations, growth fashions and parameters, formation of secondary phases as well as on the doping efficiency and incorporation sites of the metal atoms. (author) [de

Fabrication and properties of graphene reinforced silicon nitride composite materials

Energy Technology Data Exchange (ETDEWEB)

Yang, Yaping; Li, Bin, E-mail: libin@nudt.edu.cn; Zhang, Changrui; Wang, Siqing; Liu, Kun; Yang, Bei

2015-09-17

Silicon nitride (Si{sub 3}N{sub 4}) ceramic composites reinforced with graphene platelets (GPLs) were prepared by hot pressed sintering and pressureless sintering respectively. Adequate intermixing of the GPLs and the ceramic powders was achieved in nmethyl-pyrrolidone (NMP) under ultrasonic vibration followed by ball-milling. The microstructure and phases of the Si{sub 3}N{sub 4} ceramic composites were investigated by Field Emission Scanning Electron Microscopy (SEM) and X-ray diffraction (XRD). The effects of GPLs on the composites' mechanical properties were analyzed. The results showed that GPLs were well dispersed in the Si{sub 3}N{sub 4} ceramic matrix. β-Si{sub 3}N{sub 4,} O′-sialon and GPLs were present in the hot-pressed composites while pressureless sintered composites contain β-Si{sub 3}N{sub 4}, Si, SiC and GPLs. Graphene has the potential to improve the mechanical properties of both the hot pressed and pressureless sintered composites. Toughening effect of GPLs on the pressureless sintered composites appeared more effective than that on the hot pressed composites. Toughening mechanisms, such as pull-out, crack bridging and crack deflection induced by GPLs were observed in the composites prepared by the two methods.

Sub-micron silicon nitride waveguide fabrication using conventional optical lithography.

Science.gov (United States)

Huang, Yuewang; Zhao, Qiancheng; Kamyab, Lobna; Rostami, Ali; Capolino, Filippo; Boyraz, Ozdal

2015-03-09

We demonstrate a novel technique to fabricate sub-micron silicon nitride waveguides using conventional contact lithography with MEMS-grade photomasks. Potassium hydroxide anisotropic etching of silicon facilitates line reduction and roughness smoothing and is key to the technique. The fabricated waveguides is measured to have a propagation loss of 0.8dB/cm and nonlinear coefficient of γ = 0.3/W/m. A low anomalous dispersion of <100ps/nm/km is also predicted. This type of waveguide is highly suitable for nonlinear optics. The channels naturally formed on top of the waveguide also make it promising for plasmonics and quantum efficiency enhancement in sensing applications.

Gallium nitride on gallium oxide substrate for integrated nonlinear optics

KAUST Repository

Awan, Kashif M.; Dolgaleva, Ksenia; Mumthaz Muhammed, Mufasila; Roqan, Iman S.

2017-01-01

Gallium Nitride (GaN), being a direct bandgap semiconductor with a wide bandgap and high thermal stability, is attractive for optoelectronic and electronic applications. Furthermore, due to its high optical nonlinearity — the characteristic of all 111-V semiconductors — GaN is also expected to be a suitable candidate for integrated nonlinear photonic circuits for a plethora of apphcations, ranging from on-chip wavelength conversion to quantum computing. Although GaN devices are in commercial production, it still suffers from lack of a suitable substrate material to reduce structural defects like high densities of threading dislocations (TDs), stacking faults, and grain boundaries. These defects significandy deteriorate the optical quality of the epi-grown GaN layer, since they act as non-radiative recombination centers. Recent studies have shown that GaN grown on (−201) β-Gallium Oxide (Ga2O3) has superior optical quality due to a better lattice matching as compared to GaN grown on Sapphire (Al2O3) [1-3]. In this work, we report on the fabrication of GaN waveguides on GaiOj substrate and their optical characterization to assess their feasibihty for efficient four-wave mixing (FWM).

Gallium nitride on gallium oxide substrate for integrated nonlinear optics

KAUST Repository

Awan, Kashif M.

2017-11-22

Gallium Nitride (GaN), being a direct bandgap semiconductor with a wide bandgap and high thermal stability, is attractive for optoelectronic and electronic applications. Furthermore, due to its high optical nonlinearity — the characteristic of all 111-V semiconductors — GaN is also expected to be a suitable candidate for integrated nonlinear photonic circuits for a plethora of apphcations, ranging from on-chip wavelength conversion to quantum computing. Although GaN devices are in commercial production, it still suffers from lack of a suitable substrate material to reduce structural defects like high densities of threading dislocations (TDs), stacking faults, and grain boundaries. These defects significandy deteriorate the optical quality of the epi-grown GaN layer, since they act as non-radiative recombination centers. Recent studies have shown that GaN grown on (−201) β-Gallium Oxide (Ga2O3) has superior optical quality due to a better lattice matching as compared to GaN grown on Sapphire (Al2O3) [1-3]. In this work, we report on the fabrication of GaN waveguides on GaiOj substrate and their optical characterization to assess their feasibihty for efficient four-wave mixing (FWM).

Optical and passivating properties of hydrogenated amorphous silicon nitride deposited by plasma enhanced chemical vapour deposition for application on silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Wight, Daniel Nilsen

2008-07-01

Within this thesis, several important subjects related to the use of amorphous silicon nitride made by plasma enhanced chemical vapour deposition as an anti-reflective coating on silicon solar cells are presented. The first part of the thesis covers optical simulations to optimise single and double layer anti-reflective coatings with respect to optical performance when situated on a silicon solar cell. The second part investigates the relationship between important physical properties of silicon nitride films when deposited under different conditions. The optical simulations were either based on minimising the reflectance off a silicon nitride/silicon wafer stack or maximising the transmittance through the silicon nitride into the silicon wafer. The former method allowed consideration of the reflectance off the back surface of the wafer, which occurs typically at wavelengths above 1000 nm due to the transparency of silicon at these wavelengths. However, this method does not take into consideration the absorption occurring in the silicon nitride, which is negligible at low refractive indexes but quite significant when the refractive index increases above 2.1. For high-index silicon nitride films, the latter method is more accurate as it considers both reflectance and absorbance in the film to calculate the transmittance into the Si wafer. Both methods reach similar values for film thickness and refractive index for optimised single layer anti-reflective coatings, due to the negligible absorption occurring in these films. For double layer coatings, though, the reflectance based simulations overestimated the optimum refractive index for the bottom layer, which would have lead to excessive absorption if applied to real anti-reflective coatings. The experimental study on physical properties for silicon nitride films deposited under varying conditions concentrated on the estimation of properties important for its applications, such as optical properties, passivation

Synthesis and Thermal Conductivity of Exfoliated Hexagonal Boron Nitride/Alumina Ceramic Composite

Science.gov (United States)

Hung, Ching-cheh; Hurst, Janet; Santiago, Diana; Lizcano, Maricela; Kelly, Marisabel

2017-01-01

Exfoliated hexagonal boron nitride (hBN)/alumina composite can be fabricated by following the process of (1) heating a mixture of hBN, AlCl3, and NaF in nitrogen for intercalation; (2) heating the intercalated product in air for exfoliation and at the same time converting the intercalate (AlCl3) into Al2O3, (3) rinsing the oxidized product, (4) coating individual exfoliated hBN platelets that contain Al2O3 with new layers of aluminum oxide, and finally, (5) hot pressing the product into the composite. The composite thus obtained has a composition of approximately 60 percent by weight hBN and 40 percent by weight alumina. Its in-plane and through-plane thermal conductivity were measured to be 86 and 18 watts per meter Kelvin, respectively, at room temperature.

Electrochemical behavior of rare earth metals and their nitrides

International Nuclear Information System (INIS)

Ito, Yasuhiko; Goto, Takuya

2004-01-01

Pyrometallurgical recycle process using molten salts is considered to be a high potential in pyro-reprocess technologies for spent nitride fuels, and it is important to understand chemical and electro-chemical behavior of nitrides and metals in molten salts. In this study, cadmium nitrates deposited on the anode Cd plate in motlen salt (LiCl-KCl) with addition of Li 3 N are examined. The cadmium nitrates deposited have various compositions corresponding to polarization potentials and then, the relationship between the deposition potential of nitride Cd and their composition is cleared. Their standard chemical potential of CdN is estimated from electrochemical measurement. And then, potential-pH 3- diagram is drawn by voltametry examination of nitride resolution behavior with using thermochemical data of nitrides. (A. Hishinuma)

Structure and phase composition of titanium nitride coating on austenitic steel

International Nuclear Information System (INIS)

Dubovitskaya, N.V.; Kolenchenko, L.D.; Larikov, L.N.

1989-01-01

Structure and phase composition of titanium nitride coating deposited on 08Kh18N10T steel substrate using ''Bulat'' device are studied. Use of complex investigation methods permitted despite small coating thickness (1μm) to aquire information on hardness, porosity, to study phase composition in all coating thickness. The surface layer (∼0.1 μm) consists of ε-Ti 2 N, TiN 0.6 , TiC 0.35 , that is formed with carbon participation from oil vacuum. In more deeper layers beside ε-Ti 2 N TiC 0.14 N 0.77 is present. Effect of carbon diffusion from substrate to forming coating is stated. Gradient of element concentrations in the substrate-coating interface causes recrystallization of austenite

Discontinuous precipitation in a nickel-free high nitrogen austenitic stainless steel on solution nitriding

Science.gov (United States)

Mohammadzadeh, Roghayeh; Akbari, Alireza; Grumsen, Flemming B.; Somers, Marcel A. J.

2017-10-01

Chromium-rich nitride precipitates in production of nickel-free austenitic stainless steel plates via pressurised solution nitriding of Fe-22.7Cr-2.4Mo ferritic stainless steel at 1473 K (1200 °C) under a nitrogen gas atmosphere was investigated. The microstructure, chemical and phase composition, morphology and crystallographic orientation between the resulted austenite and precipitates were investigated using optical microscopy, X-ray Diffraction (XRD), Scanning and Transmission Electron Microscopy (TEM) and Electron Back Scatter Diffraction (EBSD). On prolonged nitriding, Chromium-rich nitride precipitates were formed firstly close to the surface and later throughout the sample with austenitic structure. Chromium-rich nitride precipitates with a rod or strip-like morphology was developed by a discontinuous cellular precipitation mechanism. STEM-EDS analysis demonstrated partitioning of metallic elements between austenite and nitrides, with chromium contents of about 80 wt.% in the precipitates. XRD analysis indicated that the Chromium-rich nitride precipitates are hexagonal (Cr, Mo)2N. Based on the TEM studies, (Cr, Mo)2N precipitates presented a (1 1 1)γ//(0 0 2)(Cr, Mo)2N, ?γ//?(Cr, Mo)2N orientation relationship with respect to the austenite matrix. EBSD studies revealed that the austenite in the regions that have transformed into austenite and (Cr, Mo)2N have no orientation relation to the untransformed austenite.

EDITORIAL: Non-polar and semipolar nitride semiconductors Non-polar and semipolar nitride semiconductors

Science.gov (United States)

Han, Jung; Kneissl, Michael

2012-02-01

Throughout the history of group-III-nitride materials and devices, scientific breakthroughs and technological advances have gone hand-in-hand. In the late 1980s and early 1990s, the discovery of the nucleation of smooth (0001) GaN films on c-plane sapphire and the activation of p-dopants in GaN led very quickly to the realization of high-brightness blue and green LEDs, followed by the first demonstration of GaN-based violet laser diodes in the mid 1990s. Today, blue InGaN LEDs boast record external quantum efficiencies exceeding 80% and the emission wavelength of the InGaN-based laser diode has been pushed into the green spectral range. Although these tremenduous advances have already spurred multi-billion dollar industries, there are still a number of scientific questions and technological issues that are unanswered. One key challenge is related to the polar nature of the III-nitride wurtzite crystal. Until a decade ago all research activities had almost exclusively concentrated on (0001)-oriented polar GaN layers and heterostructures. Although the device characteristics seem excellent, the strong polarization fields at GaN heterointerfaces can lead to a significant deterioration of the device performance. Triggered by the first demonstration non-polar GaN quantum wells grown on LiAlO2 by Waltereit and colleagues in 2000, impressive advances in the area of non-polar and semipolar nitride semiconductors and devices have been achieved. Today, a large variety of heterostructures free of polarization fields and exhibiting exceptional electronic and optical properties have been demonstrated, and the fundamental understanding of polar, semipolar and non-polar nitrides has made significant leaps forward. The contributions in this Semiconductor Science and Technology special issue on non-polar and semipolar nitride semiconductors provide an impressive and up-to-date cross-section of all areas of research and device physics in this field. The articles cover a wide range of

Nanostructured silicon nitride from wheat and rice husks

Energy Technology Data Exchange (ETDEWEB)

Qadri, S. B.; Rath, B. B.; Gorzkowski, E. P.; Wollmershauser, J. A.; Feng, C. R. [Materials Science and Component Technology Directorate, Naval Research Laboratory, Washington, D.C. 20375 (United States)

2016-04-07

Nanoparticles, submicron-diameter tubes, and rods of Si{sub 3}N{sub 4} were synthesized from the thermal treatment of wheat and rice husks at temperatures at and above 1300 °C in a nitrogen atmosphere. The whole pattern Rietveld analysis of the observed diffraction data from treatments at 1300 °C showed the formation of only hexagonal α-phase of Si{sub 3}N{sub 4} with an R-factor of 1%, whereas samples treated at 1400 °C and above showed both α- and β-phases with an R-factor of 2%. Transmission electron microscopy showed the presence of tubes, rods, and nanoparticles of Si{sub 3}N{sub 4}. In a two-step process, where pure SiC was produced first from rice or wheat husk in an argon atmosphere and subsequently treated in a nitrogen atmosphere at 1450 °C, a nanostructured composite material having α- and β-phases of Si{sub 3}N{sub 4} combined with cubic phase of SiC was formed. The thermodynamics of the formation of silicon nitride is discussed in terms of the solid state reaction between organic matter (silica content), which is inherently present in the wheat and rice husks, with the nitrogen from the furnace atmosphere. Nanostructures of silicon nitride formed by a single direct reaction or their composites with SiC formed in a two-step process of agricultural byproducts provide an uncomplicated sustainable synthesis route for silicon nitride used in mechanical, biotechnology, and electro-optic nanotechnology applications.

Surface analysis in steel nitrides by using Moessbauer spectroscopy

International Nuclear Information System (INIS)

Figueiredo, R.S. de.

1991-07-01

The formation of iron nitride layer at low temperatures, 600-700 K, by Moessbauer spectroscopy is studied. These layers were obtained basically through two different processes: ion nitriding and ammonia gas nitriding. A preliminary study about post-discharge nitriding was made using discharge in hollow cathode as well as microwave excitation. The assembly of these chambers is also described. The analysis of the nitrided samples was done by CEMS and CXMS, aided by optical microscopy, and the CEMS and CXMS detectors were constructed by ourselves. We also made a brief study about these detectors, testing as acetone as the mixture 80% He+10% C H 4 as detection gases for the use of CEMS. The surface analysis of the samples showed that in the ammonia gas process nitriding the nitrided layer starts by the superficial formation of an iron nitride rich nitrogen. By thermal evolution this nitride promotes the diffusion of nitrogen and the formation of other more stable nitrides. (author)

Martensitic Stainless Steels Low-temperature Nitriding: Dependence of Substrate Composition

OpenAIRE

Ferreira, Lauro Mariano; Brunatto, Silvio Francisco; Cardoso, Rodrigo Perito

2015-01-01

Low-temperature plasma assisted nitriding is a very promising technique to improve surface mechanical properties of stainless steels, keeping unaltered or even improving their surface corrosion resistance. During treatment, nitrogen diffuses into the steel surface, increasing its hardness and wear resistance. In the present work the nitriding process of different martensitic stainless steels was studied. As-quenched AISI 410, 410NiMo, 416 and 420 stainless steel samples were plasma nitrided a...

Surface functionalization of hexagonal boron nitride and its effect on the structure and performance of composites

Energy Technology Data Exchange (ETDEWEB)

Jin, Wenqin; Zhang, Wei; Gao, Yuwen [Jiangsu Key Laboratory of Advanced Functional Polymer Design and Application, Department of Materials Science and Engineering, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123 (China); Liang, Guozheng, E-mail: lgzheng@suda.edu.cn [Jiangsu Key Laboratory of Advanced Functional Polymer Design and Application, Department of Materials Science and Engineering, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123 (China); Gu, Aijuan, E-mail: ajgu@suda.edu.cn [Jiangsu Key Laboratory of Advanced Functional Polymer Design and Application, Department of Materials Science and Engineering, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123 (China); Yuan, Li [Jiangsu Key Laboratory of Advanced Functional Polymer Design and Application, Department of Materials Science and Engineering, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123 (China)

2013-04-01

A new organized hexagonal boron nitride (OhBN) with significantly increased amount of amine groups was synthesized, and characterized by Fourier Transform Infrared (FTIR), X-ray Photoelectron Spectroscopy (XPS), Thermogravimetric (TG) analysis, UV–vis Transmittance Spectra, Transmission Electron Microscope (TEM) and the potentiometric titration. The content of amine groups for OhBN is about 5 times of that for original hexagonal boron nitride (hBN). Based on the preparation of OhBN, new composites consisting of OhBN and bismaleimide (BD) resin were developed, which show greatly improved integrated performance (including dynamic mechanical, dielectric and thermal properties) compared with BD resin and the hBN/BD composites. In the case of the OhBN/BD composite with 15 wt% OhBN, its storage modulus, dielectric loss, thermal conductivity and coefficient of thermal expansion are about 1.2, 0.56, 1.11 and 0.92 times of the corresponding values of hBN/BD composite, respectively; moreover, the glass transition temperature of the former is 15 °C higher than that of the latter. These interesting results suggest that the integrated performance of the composites is closely related to the surface nature of the fillers because the change in the surface nature not only varies the chemical structure, free volume and crosslinking density of the composite, but also determines the interfacial nature between inorganic fillers and the resin matrix. This investigation demonstrates that the method proposed herein provides a new approach to prepare organized inorganic fillers as well as corresponding composites with controlled structure and expected performances for cutting-edge industries.

Innovative boron nitride-doped propellants

Directory of Open Access Journals (Sweden)

Thelma Manning

2016-04-01

Full Text Available The U.S. military has a need for more powerful propellants with balanced/stoichiometric amounts of fuel and oxidants. However, balanced and more powerful propellants lead to accelerated gun barrel erosion and markedly shortened useful barrel life. Boron nitride (BN is an interesting potential additive for propellants that could reduce gun wear effects in advanced propellants (US patent pending 2015-026P. Hexagonal boron nitride is a good lubricant that can provide wear resistance and lower flame temperatures for gun barrels. Further, boron can dope steel, which drastically improves its strength and wear resistance, and can block the formation of softer carbides. A scalable synthesis method for producing boron nitride nano-particles that can be readily dispersed into propellants has been developed. Even dispersion of the nano-particles in a double-base propellant has been demonstrated using a solvent-based processing approach. Stability of a composite propellant with the BN additive was verified. In this paper, results from propellant testing of boron nitride nano-composite propellants are presented, including closed bomb and wear and erosion testing. Detailed characterization of the erosion tester substrates before and after firing was obtained by electron microscopy, inductively coupled plasma and x-ray photoelectron spectroscopy. This promising boron nitride additive shows the ability to improve gun wear and erosion resistance without any destabilizing effects to the propellant. Potential applications could include less erosive propellants in propellant ammunition for large, medium and small diameter fire arms.

Atomic Resolution Microscopy of Nitrides in Steel

DEFF Research Database (Denmark)

Danielsen, Hilmar Kjartansson

2014-01-01

MN and CrMN type nitride precipitates in 12%Cr steels have been investigated using atomic resolution microscopy. The MN type nitrides were observed to transform into CrMN both by composition and crystallography as Cr diffuses from the matrix into the MN precipitates. Thus a change from one...

Plasma nitriding monitoring reactor: A model reactor for studying plasma nitriding processes using an active screen

Science.gov (United States)

Hamann, S.; Börner, K.; Burlacov, I.; Spies, H.-J.; Strämke, M.; Strämke, S.; Röpcke, J.

2015-12-01

A laboratory scale plasma nitriding monitoring reactor (PLANIMOR) has been designed to study the basics of active screen plasma nitriding (ASPN) processes. PLANIMOR consists of a tube reactor vessel, made of borosilicate glass, enabling optical emission spectroscopy (OES) and infrared absorption spectroscopy. The linear setup of the electrode system of the reactor has the advantages to apply the diagnostic approaches on each part of the plasma process, separately. Furthermore, possible changes of the electrical field and of the heat generation, as they could appear in down-scaled cylindrical ASPN reactors, are avoided. PLANIMOR has been used for the nitriding of steel samples, achieving similar results as in an industrial scale ASPN reactor. A compact spectrometer using an external cavity quantum cascade laser combined with an optical multi-pass cell has been applied for the detection of molecular reaction products. This allowed the determination of the concentrations of four stable molecular species (CH4, C2H2, HCN, and NH3). With the help of OES, the rotational temperature of the screen plasma could be determined.

Plasma nitriding monitoring reactor: A model reactor for studying plasma nitriding processes using an active screen

International Nuclear Information System (INIS)

Hamann, S.; Röpcke, J.; Börner, K.; Burlacov, I.; Spies, H.-J.; Strämke, M.; Strämke, S.

2015-01-01

A laboratory scale plasma nitriding monitoring reactor (PLANIMOR) has been designed to study the basics of active screen plasma nitriding (ASPN) processes. PLANIMOR consists of a tube reactor vessel, made of borosilicate glass, enabling optical emission spectroscopy (OES) and infrared absorption spectroscopy. The linear setup of the electrode system of the reactor has the advantages to apply the diagnostic approaches on each part of the plasma process, separately. Furthermore, possible changes of the electrical field and of the heat generation, as they could appear in down-scaled cylindrical ASPN reactors, are avoided. PLANIMOR has been used for the nitriding of steel samples, achieving similar results as in an industrial scale ASPN reactor. A compact spectrometer using an external cavity quantum cascade laser combined with an optical multi-pass cell has been applied for the detection of molecular reaction products. This allowed the determination of the concentrations of four stable molecular species (CH 4 , C 2 H 2 , HCN, and NH 3 ). With the help of OES, the rotational temperature of the screen plasma could be determined

Plasma nitriding monitoring reactor: A model reactor for studying plasma nitriding processes using an active screen

Energy Technology Data Exchange (ETDEWEB)

Hamann, S., E-mail: hamann@inp-greifswald.de; Röpcke, J. [INP-Greifswald, Felix-Hausdorff-Str. 2, 17489 Greifswald (Germany); Börner, K.; Burlacov, I.; Spies, H.-J. [TU Bergakademie Freiberg, Institute of Materials Engineering, Gustav-Zeuner-Str. 5, 09599 Freiberg (Germany); Strämke, M.; Strämke, S. [ELTRO GmbH, Arnold-Sommerfeld-Ring 3, 52499 Baesweiler (Germany)

2015-12-15

A laboratory scale plasma nitriding monitoring reactor (PLANIMOR) has been designed to study the basics of active screen plasma nitriding (ASPN) processes. PLANIMOR consists of a tube reactor vessel, made of borosilicate glass, enabling optical emission spectroscopy (OES) and infrared absorption spectroscopy. The linear setup of the electrode system of the reactor has the advantages to apply the diagnostic approaches on each part of the plasma process, separately. Furthermore, possible changes of the electrical field and of the heat generation, as they could appear in down-scaled cylindrical ASPN reactors, are avoided. PLANIMOR has been used for the nitriding of steel samples, achieving similar results as in an industrial scale ASPN reactor. A compact spectrometer using an external cavity quantum cascade laser combined with an optical multi-pass cell has been applied for the detection of molecular reaction products. This allowed the determination of the concentrations of four stable molecular species (CH{sub 4}, C{sub 2}H{sub 2}, HCN, and NH{sub 3}). With the help of OES, the rotational temperature of the screen plasma could be determined.

Microstructural Characterization of Low Temperature Gas Nitrided Martensitic Stainless Steel

DEFF Research Database (Denmark)

Fernandes, Frederico Augusto Pires; Christiansen, Thomas Lundin; Somers, Marcel A. J.

2015-01-01

The present work presents microstructural investigations of the surface zone of low temperature gas nitrided precipitation hardening martensitic stainless steel AISI 630. Grazing incidence X-ray diffraction was applied to investigate the present phases after successive removal of very thin sections...... of the sample surface. The development of epsilon nitride, expanded austenite and expanded martensite resulted from the low temperature nitriding treatments. The microstructural features, hardness and phase composition are discussed with emphasis on the influence of nitriding duration and nitriding potential....

Thermal Conductivity Performance of Polypropylene Composites Filled with Polydopamine-Functionalized Hexagonal Boron Nitride.

Science.gov (United States)

Chen, Lin; Xu, Hong-Fei; He, Shao-Jian; Du, Yi-Hang; Yu, Nan-Jie; Du, Xiao-Ze; Lin, Jun; Nazarenko, Sergei

2017-01-01

Mussel-inspired approach was attempted to non-covalently functionalize the surfaces of boron nitride (BN) with self-polymerized dopamine coatings in order to reduce the interfacial thermal barrier and enhance the thermal conductivity of BN-containing composites. Compared to the polypropylene (PP) composites filled with pristine BN at the same filler content, thermal conductivity was much higher for those filled with both functionalized BN (f-BN) and maleic anhydride grafted PP (PP-g-ma) due to the improved filler dispersion and better interfacial filler-matrix compatibility, which facilitated the development of more thermal paths. Theoretical models were also applied to predict the composite thermal conductivity in which the Nielsen model was found to fit well with the experimental results, and the estimated effective aspect ratio of fillers well corresponded to the degree of filler aggregation as observed in the morphological study.

Optical and Temporal Carrier Dynamics Investigations of III-Nitrides for Semiconductor Lighting

KAUST Repository

Ajia, Idris A.

2018-01-01

In the first part of this dissertation, the effects of some important types of crystal defects present in III-nitride structures are investigated. Here, two types of defects are studied in two different III-nitride-based light emitting structures. The first defects of interest are V-pit defects in InGaN/GaN multiple quantum well (MQW) blue LEDs, where their contribution to the high-efficiency of such LEDs is discussed. In addition, the effect of these defects on the efficiency droop phenomenon in these LEDs is elucidated. Secondly, the optical effects of grain boundary defects in AlN-rich AlGaN/AlGaN MQWs is studied. In this study, it is shown that grain boundary defects may result in abnormal carrier localization behavior in these deep ultraviolet (UV) structures. While both defects are treated individually, it is evident from these studies that threading dislocation (TD) defects are an underlying contributor to the more undesirable outcomes of the said defects. In the second part, the dissertation reports on the carrier dynamics of III-nitride LED structures grown on emerging substrates—as possible efficiency enhancing techniques—aimed at mitigating the effects of TD defects. Thus, the carrier dynamics of GaN/AlGaN UV MQWs grown, for the first time, on (2̅01) – oriented β-Ga2O3 is studied. It is shown to be a candidate substrate for highly efficient vertical UV devices. Finally, results from the carrier dynamics investigation of an AlGaN/AlGaN MQW LED structure homoepitaxially grown on AlN substrate are discussed, where it is shown that its high-efficiency is sustained at high temperatures through the thermal redistribution of carriers to highly efficient recombination sites.

Critical fields of niobium nitride films of various granularity

International Nuclear Information System (INIS)

Antonova, E.A.; Sukhov, V.A.

1983-01-01

The behaviour of lattice parameter, specific electrical resistivity, critical temperature, and temperature dependence of upper critical field near Tsub(cr) of sputtered niobium nitride films is investigated versus the substrate temperature and gas mixture composition in the process of reactive cathode sputtering. The relation between extrapolated value of the upper critical field and granularity of niobium nitride films, close as to composition to the stoichiometric one, has been found. Values of the kappa parameter of the Ginsburg-Landau theory and of the coherence length for niobium nitride films of various granularity are estimated in an approximation of uniform distribution of impurities in a sample

Low-Crosstalk Composite Optical Crosspoint Switches

Science.gov (United States)

Pan, Jing-Jong; Liang, Frank

1993-01-01

Composite optical switch includes two elementary optical switches in tandem, plus optical absorbers. Like elementary optical switches, composite optical switches assembled into switch matrix. Performance enhanced by increasing number of elementary switches. Advantage of concept: crosstalk reduced to acceptably low level at moderate cost of doubling number of elementary switches rather than at greater cost of tightening manufacturing tolerances and exerting more-precise control over operating conditions.

Preparation and chemical stability of iron-nitride-coated iron microparticles

International Nuclear Information System (INIS)

Luo Xin; Liu Shixiong

2007-01-01

Iron-nitride-coated iron microparticles were prepared by nitridation of the surface of iron microparticles with ammonia gas at a temperature of 510 deg. C. The phases, composition, morphology, magnetic properties, and chemical stability of the particles were studied. The phases were α-Fe, ε-Fe 3 N, and γ-Fe 4 N. The composition varied from the core to the surface, with 99.8 wt% Fe in the core, and 93.8 wt% Fe and 6 wt% N in the iron-nitride coating. The thickness of the iron-nitride coating was about 0.28 μm. The chemical stability of the microparticles was greatly improved, especially the corrosion resistance in corrosive aqueous media. The saturation magnetization and the coercive force were 17.1x10 3 and 68 kA/m, respectively. It can be concluded that iron-nitride-coated iron microparticles will be very useful in many fields, such as water-based magnetorheological fluids and polishing fluids

Formation of oriented nitrides by N+ ion implantation in iron single crystals

International Nuclear Information System (INIS)

Costa, A.R.G.; Silva, R.C. da; Ferreira, L.P.; Carvalho, M.D.; Silva, C.; Franco, N.; Godinho, M.

2014-01-01

Iron single crystals were implanted with nitrogen at room temperature, with a fluence of 5×10 17 cm −2 and 50 keV energy, to produce iron nitride phases and characterize the influence of the crystal orientation. The stability and evolution of the nitride phases and diffusion of implanted nitrogen were studied as a function of successive annealing treatments at 250 °C in vacuum. The composition, structure and magnetic properties were characterized using RBS/channeling, X-Ray Diffraction, Magnetic Force Microscopy, Magneto-optical Kerr Effect and Conversion Electron Mössbauer Spectroscopy. In the as-implanted state the formation of Fe 2 N phase was clearly identified in all single crystals. This phase is not stable at 250 °C and annealing at this temperature promotes the formation of ε-Fe 3 N, or γ′-Fe 4 N, depending on the orientation of the substrate. - Highlights: • Oriented magnetic iron nitrides were obtained by nitrogen implantation into iron single crystals. • The stable magnetic nitride phase at 250 °C depends on the orientation of the host single crystal, being γ'-Fe 4 N or ε-Fe 3 N. • The easy magnetization axis was found to lay in the (100) plane for cubic γ'-Fe 4 N and out of (100) plane for hexagonal ε-Fe 3 N

Electronic structure and optical properties of boron nitride nanotube bundles from first principles

Science.gov (United States)

Behzad, Somayeh

2015-06-01

The electronic and optical properties of bundled armchair and zigzag boron nitride nanotubes (BNNTs) are investigated by using density functional theory. Owing to the inter-tube coupling, the dispersions along the tube axis and in the plane perpendicular to the tube axis of BNNT bundles are significantly varied, which are characterized by the decrease of band gap, the splitting of the doubly degenerated states, the expansions of valence and conduction bands. The calculated dielectric functions of the armchair and zigzag bundles are similar to that of the isolated tubes, except for the appearance of broadened peaks, small shifts of peak positions about 0.1 eV and increasing of peak intensities.

Preparing microspheres of actinide nitrides from carbon containing oxide sols

International Nuclear Information System (INIS)

Triggiani, L.V.

1975-01-01

A process is given for preparing uranium nitride, uranium oxynitride, and uranium carboxynitride microspheres and the microspheres as compositions of matter. The microspheres are prepared from carbide sols by reduction and nitriding steps. (Official Gazette)

Microstructural characterization of an AISI-SAE 4140 steel without nitridation and nitrided; Caracterizacion microestructural de un acero AISI-SAE 4140 sin nitrurar y nitrurado

Energy Technology Data Exchange (ETDEWEB)

Medina F, A.; Naquid G, C. [Gerencia de Ciencia de Materiales, Depto. de Sintesis y Caracterizacion de Materiales, A.P. 18-1027, 11801 Mexico D.F. (Mexico)

2000-07-01

It was micro structurally characterized an AISI-SAE 4140 steel before and after of nitridation through the nitridation process by plasma post-unloading microwaves through Optical microscopy (OM), Scanning electron microscopy (SEM) by means of secondary electrons and retrodispersed, X-ray diffraction (XRD), Energy dispersion spectra (EDS) and mapping of elements. (Author)

Steel bonded dense silicon nitride compositions and method for their fabrication

Science.gov (United States)

Landingham, Richard L.; Shell, Thomas E.

1987-01-01

A two-stage bonding technique for bonding high density silicon nitride and other ceramic materials to stainless steel and other hard metals, and multilayered ceramic-metal composites prepared by the technique are disclosed. The technique involves initially slurry coating a surface of the ceramic material at about 1500.degree. C. in a vacuum with a refractory material and the stainless steel is then pressure bonded to the metallic coated surface by brazing it with nickel-copper-silver or nickel-copper-manganese alloys at a temperature in the range of about 850.degree. to 950.degree. C. in a vacuum. The two-stage bonding technique minimizes the temperature-expansion mismatch between the dissimilar materials.

Colloidal Plasmonic Titanium Nitride Nanoparticles: Properties and Applications

Directory of Open Access Journals (Sweden)

Guler Urcan

2015-01-01

Full Text Available Optical properties of colloidal plasmonic titanium nitride nanoparticles are examined with an eye on their photothermal and photocatalytic applications via transmission electron microscopy and optical transmittance measurements. Single crystal titanium nitride cubic nanoparticles with an average size of 50 nm, which was found to be the optimum size for cellular uptake with gold nanoparticles [1], exhibit plasmon resonance in the biological transparency window and demonstrate a high absorption efficiency. A self-passivating native oxide at the surface of the nanoparticles provides an additional degree of freedom for surface functionalization. The titanium oxide shell surrounding the plasmonic core can create new opportunities for photocatalytic applications.

First principles calculations of interstitial and lamellar rhenium nitrides

Energy Technology Data Exchange (ETDEWEB)

Soto, G., E-mail: gerardo@cnyn.unam.mx [Universidad Nacional Autonoma de Mexico, Centro de Nanociencias y Nanotecnologia, Km 107 Carretera Tijuana-Ensenada, Ensenada Baja California (Mexico); Tiznado, H.; Reyes, A.; Cruz, W. de la [Universidad Nacional Autonoma de Mexico, Centro de Nanociencias y Nanotecnologia, Km 107 Carretera Tijuana-Ensenada, Ensenada Baja California (Mexico)

2012-02-15

Highlights: Black-Right-Pointing-Pointer The possible structures of rhenium nitride as a function of composition are analyzed. Black-Right-Pointing-Pointer The alloying energy is favorable for rhenium nitride in lamellar arrangements. Black-Right-Pointing-Pointer The structures produced by magnetron sputtering are metastable variations. Black-Right-Pointing-Pointer The structures produced by high-pressure high-temperature are stable configurations. Black-Right-Pointing-Pointer The lamellar structures are a new category of interstitial dissolutions. - Abstract: We report here a systematic first principles study of two classes of variable-composition rhenium nitride: i, interstitial rhenium nitride as a solid solution and ii, rhenium nitride in lamellar structures. The compounds in class i are cubic and hexagonal close-packed rhenium phases, with nitrogen in the octahedral and tetrahedral interstices of the metal, and they are formed without changes to the structure, except for slight distortions of the unit cells. In the compounds in class ii, by contrast, the nitrogen inclusion provokes stacking faults in the parent metal structure. These faults create trigonal-prismatic sites where the nitrogen residence is energetically favored. This second class of compounds produces lamellar structures, where the nitrogen lamellas are inserted among multiple rhenium layers. The Re{sub 3}N and Re{sub 2}N phases produced recently by high-temperature and high-pressure synthesis belong to this class. The ratio of the nitrogen layers to the rhenium layers is given by the composition. While the first principle calculations point to higher stability for the lamellar structures as opposed to the interstitial phases, the experimental evidence presented here demonstrates that the interstitial classes are synthesizable by plasma methods. We conclude that rhenium nitrides possess polymorphism and that the two-dimensional lamellar structures might represent an emerging class of materials

First principles calculations of interstitial and lamellar rhenium nitrides

International Nuclear Information System (INIS)

Soto, G.; Tiznado, H.; Reyes, A.; Cruz, W. de la

2012-01-01

Highlights: ► The possible structures of rhenium nitride as a function of composition are analyzed. ► The alloying energy is favorable for rhenium nitride in lamellar arrangements. ► The structures produced by magnetron sputtering are metastable variations. ► The structures produced by high-pressure high-temperature are stable configurations. ► The lamellar structures are a new category of interstitial dissolutions. - Abstract: We report here a systematic first principles study of two classes of variable-composition rhenium nitride: i, interstitial rhenium nitride as a solid solution and ii, rhenium nitride in lamellar structures. The compounds in class i are cubic and hexagonal close-packed rhenium phases, with nitrogen in the octahedral and tetrahedral interstices of the metal, and they are formed without changes to the structure, except for slight distortions of the unit cells. In the compounds in class ii, by contrast, the nitrogen inclusion provokes stacking faults in the parent metal structure. These faults create trigonal-prismatic sites where the nitrogen residence is energetically favored. This second class of compounds produces lamellar structures, where the nitrogen lamellas are inserted among multiple rhenium layers. The Re 3 N and Re 2 N phases produced recently by high-temperature and high-pressure synthesis belong to this class. The ratio of the nitrogen layers to the rhenium layers is given by the composition. While the first principle calculations point to higher stability for the lamellar structures as opposed to the interstitial phases, the experimental evidence presented here demonstrates that the interstitial classes are synthesizable by plasma methods. We conclude that rhenium nitrides possess polymorphism and that the two-dimensional lamellar structures might represent an emerging class of materials within binary nitride chemistry.

III-nitride semiconductors and their modern devices

CERN Document Server

2013-01-01

This book is dedicated to GaN and its alloys AlGaInN (III-V nitrides), semiconductors with intrinsic properties well suited for visible and UV light emission and electronic devices working at high temperature, high frequency, and harsh environments. There has been a rapid growth in the industrial activity relating to GaN, with GaN now ranking at the second position (after Si) among all semiconductors. This is mainly thanks to LEDs, but also to the emergence of lasers and high power and high frequency electronics. GaN-related research activities are also diversifying, ranging from advanced optical sources and single electron devices to physical, chemical, and biological sensors, optical detectors, and energy converters. All recent developments of nitrides and of their technology are gathered here in a single volume, with chapters written by world leaders in the field. This third book of the series edited by B. Gil is complementary to the preceding two, and is expected to offer a modern vision of nitrides and...

High Dielectric Performance of Solution-Processed Aluminum Oxide-Boron Nitride Composite Films

Science.gov (United States)

Yu, Byoung-Soo; Ha, Tae-Jun

2018-04-01

The material compositions of oxide films have been extensively investigated in an effort to improve the electrical characteristics of dielectrics which have been utilized in various electronic devices such as field-effect transistors, and storage capacitors. Significantly, solution-based compositions have attracted considerable attention as a highly effective and practical technique to replace vacuum-based process in large-area. Here, we demonstrate solution-processed composite films consisting of aluminum oxide (Al2O3) and boron nitride (BN), which exhibit remarkable dielectric properties through the optimization process. The leakage current of the optimized Al2O3-BN thin films was decreased by a factor of 100 at 3V, compared to pristine Al2O3 thin film without a loss of the dielectric constant or degradation of the morphological roughness. The characterization by X-ray photoelectron spectroscopy measurements revealed that the incorporation of BN with an optimized concentration into the Al2O3 dielectric film reduced the density of oxygen vacancies which act as defect states, thereby improving the dielectric characteristics.

Erosion resistance of composite materials on titanium, zirconium and aluminium nitride base under the electron beam effect

International Nuclear Information System (INIS)

Verkhoturov, A.D.; Kuzenkova, M.A.; Slutskin, M.G.; Kravchuk, L.A.

1977-01-01

Erosion resistance of composites based on nitrides of titanium, zirconium and aluminium to spark and electron beam processing has been studied. The erosion resistance in spark processing is shown to depend on specific electric resistance of the alloys. TiN-AlN and ZrN-AlN alloys containing more than 70% AlN (with specific electric resistance more than 10 6 -10 7 ohm/cm) caot be processed by spark method. It is shown that erosion of the composites by an electron beam depends primarily on the rate of evaporation of the components

Multifunctional fiber reinforced polymer composites using carbon and boron nitride nanotubes

Science.gov (United States)

Ashrafi, Behnam; Jakubinek, Michael B.; Martinez-Rubi, Yadienka; Rahmat, Meysam; Djokic, Drazen; Laqua, Kurtis; Park, Daesun; Kim, Keun-Su; Simard, Benoit; Yousefpour, Ali

2017-12-01

Recent progress in nanotechnology has made several nano-based materials available with the potential to address limitations of conventional fiber reinforced polymer composites, particularly in reference to multifunctional structures. Carbon nanotubes (CNTs) are the most prevalent case and offer amazing properties at the individual nanotube level. There are already a few high-profile examples of the use of CNTs in space structures to provide added electrical conductivity for static dissipation and electromagnetic shielding. Boron nitride nanotubes (BNNTs), which are structurally analogous to CNTs, also present a range of attractive properties. Like the more widely explored CNTs, individual BNNTs display remarkable mechanical properties and high thermal conductivity but with contrasting functional attributes including substantially higher thermal stability, high electrical insulation, polarizability, high neutron absorption and transparency to visible light. This presents the potential of employing either or both BNNTs and CNTs to achieve a range of lightweight, functional composites for space structures. Here we present the case for application of BNNTs, in addition to CNTs, in space structures and describe recent advances in BNNT production at the National Research Council Canada (NRC) that have, for the first time, provided sufficiently large quantities to enable commercialization of high-quality BNNTs and accelerate development of chemistry, composites and applications based on BNNTs. Early demonstrations showing the fabrication and limited structural testing of polymer matrix composites, including glass fiber-reinforced composite panels containing BNNTs will be discussed.

Investigation of phase separated polyimide blend films containing boron nitride using FTIR imaging

Science.gov (United States)

Chae, Boknam; Hong, Deok Gi; Jung, Young Mee; Won, Jong Chan; Lee, Seung Woo

2018-04-01

Immiscible aromatic polyimide (PI) blend films and a PI blend film incorporated with thermally conductive boron nitride (BN) were prepared, and their phase separation behaviors were examined by optical microscopy and FTIR imaging. The 2,2‧-bis(trifluoromethyl)benzidine (TFMB)-containing and 4,4‧-thiodianiline (TDA)-containing aromatic PI blend films and a PI blend/BN composite film show two clearly separated regions; one region is the TFMB-rich phase, and the other region is the TDA-rich phase. The introduction of BN induces morphological changes in the immiscible aromatic PI blend film without altering the composition of either domain. In particular, the BN is selectively incorporated into the TDA-rich phase in this study.

Estimation of sensing characteristics for refractory nitrides based gain assisted core-shell plasmonic nanoparticles

Science.gov (United States)

Shishodia, Manmohan Singh; Pathania, Pankaj

2018-04-01

Refractory transition metal nitrides such as zirconium nitride (ZrN), hafnium nitride (HfN) and titanium nitride (TiN) have emerged as viable alternatives to coinage metals based plasmonic materials, e.g., gold (Au) and silver (Ag). The present work assesses the suitability of gain assisted ZrN-, HfN- and TiN-based conventional core-shell nanoparticles (CCSNPs) and multilayered core-shell nanoparticles (MCSNPs) for refractive index sensing. We report that the optical gain incorporation in the dielectric layer leads to multifold enhancement of the scattering efficiency (Qsca), substantial reduction of the spectral full width at half maximum, and a higher figure of merit (FOM). In comparison with CCSNPs, the MCSNP system exhibits superior sensing characteristics such as higher FOM, ˜ 45% reduction in the critical optical gain, response shift towards the biological window, and higher degree of tunability. Inherent biocompatibility, growth compatibility, chemical stability and flexible spectral tuning of refractory nitrides augmented by superior sensing properties in the present work may pave the way for refractory nitrides based low cost sensing.

Synthesis of graphitic carbon nitride by reaction of melamine and uric acid

International Nuclear Information System (INIS)

Dante, Roberto C.; Martin-Ramos, Pablo; Correa-Guimaraes, Adriana; Martin-Gil, Jesus

2011-01-01

Highlights: → Graphitic carbon nitrides by CVD of melamine and uric acid on alumina. → The building blocks of carbon nitrides are heptazine nuclei. → Composite particles with alumina core and carbon nitride coating. - Abstract: Graphitic carbon nitrides were synthesized starting from melamine and uric acid. Uric acid was chosen because it thermally decomposes, and reacts with melamine by condensation at temperatures in the range of 400-600 deg. C. The reagents were mixed with alumina and subsequently the samples were treated in an oven under nitrogen flux. Alumina favored the deposition of the graphitic carbon nitrides layers on the exposed surface. This method can be assimilated to an in situ chemical vapor deposition (CVD). Infrared (IR) spectra, as well as X-ray diffraction (XRD) patterns, are in accordance with the formation of a graphitic carbon nitride with a structure based on heptazine blocks. These carbon nitrides exhibit poor crystallinity and a nanometric texture, as shown by transmission electron microscopy (TEM) analysis. The thermal degradation of the graphitic carbon nitride occurs through cyano group formation, and involves the bridging tertiary nitrogen and the bonded carbon, which belongs to the heptazine ring, causing the ring opening and the consequent network destruction as inferred by connecting the IR and X-ray photoelectron spectroscopy (XPS) results. This seems to be an easy and promising route to synthesize graphitic carbon nitrides. Our final material is a composite made of an alumina core covered by carbon nitride layers.

High-rate silicon nitride deposition for photovoltaics : from fundamentals to industrial application

NARCIS (Netherlands)

Kessels, W.M.M.; Oever, van den P.J.; Bosch, R.C.M.; Bijker, M.D.; Evers, M.F.J.; Schram, D.C.; Sanden, van de M.C.M.

2005-01-01

The development of a novel plasma technique for high rate (> 1 nm/s) silicon nitride deposition for multifunctional antireflection coatings on crystalline silicon solar cells is described. The research has involved the analysis of the structural and optical properties of the silicon nitride films as

High-rate silicon nitride deposition for photovoltaics : from fundamentals to industrial application

NARCIS (Netherlands)

Kessels, W.M.M.; Oever, van den P.J.; Bosch, R.C.M.; Bijker, M.D.; Evers, M.F.J.; Schram, D.C.; Sanden, van de M.C.M.

2004-01-01

The development of a novel plasma technique for high rate (> 1 nm/s) silicon nitride deposition for multifunctional antireflection coatings on crystalline silicon solar cells is described. The research has involved the analysis of the structural and optical properties of the silicon nitride films as

Analysis of mechanical properties of steel 1045 plasma nitriding: with and without tempering

International Nuclear Information System (INIS)

Machado, N.T.B.; Passos, M.L.M. dos; Riani, J.C.; Recco, A.A.C.

2014-01-01

The purpose of this study was to evaluate the possibility of tempering during the nitriding of AISI 1045 steel. The objective was to evaluate the possibility of eliminating this phase, with the nitriding properties remaining unaltered. For this, three parameter samples were compared: quenched, tempered and nitrided for 2h; quenching and nitrided for 2h and quenching and nitrided for 4h. The analysis techniques used for characterizing the samples before and after nitriding were optical microscopy, hardness Rockwell C (HRC), scanning electron microscopy (SEM), X-ray diffraction (XRD). Results showed that phase γ is the most favorable of all parameters tested. The hardness assays showed that samples with different initial hardness (with and without tempering) and even nitriding time showed similar mechanical properties. This fact suggests that the tempering process occurred parallel to the nitriding process. (author)

Bacterial adhesion studies on titanium, titanium nitride and modified hydroxyapatite thin films

Energy Technology Data Exchange (ETDEWEB)

Jeyachandran, Y L [Department of Physics, Bharathiar University, Coimbatore 641 046, Tamil Nadu (India); Venkatachalam, S [Department of Physics, Bharathiar University, Coimbatore 641 046, Tamil Nadu (India); Karunagaran, B [Department of Physics, Bharathiar University, Coimbatore 641 046, Tamil Nadu (India); Narayandass, Sa K [Department of Physics, Bharathiar University, Coimbatore 641 046, Tamil Nadu (India); Mangalaraj, D [Department of Physics, Bharathiar University, Coimbatore 641 046, Tamil Nadu (India); Bao, C Y [West China College of Stomatology, Sichuan University, Chengdu 610041 (China); Zhang, C L [West China College of Stomatology, Sichuan University, Chengdu 610041 (China)

2007-01-15

A qualitative study on adhesion of the oral bacteria Porphyromonas gingivalis on titanium (Ti), titanium nitride (TiN), fluorine modified hydroxyapatite (FHA) and zinc modified FHA (Zn-FHA) thin films is investigated. Ti and TiN thin films were deposited by DC magnetron sputtering and hydroxyapatite-based films were prepared by solgel method. The crystalline structure, optical characteristics, chemical composition and surface topography of the films were studied by XRD, optical transmission, XPS, EDAX and AFM measurements. The predominant crystallite orientation in the Ti and TiN films was along (002) and (111) of hcp and cubic structures, respectively. The Ti : O : N composition ratio in the surface of the Ti and TiN films was found to be 7 : 21 : 1 and 3 : 8 : 2, respectively. The atomic concentration ratio (Zn + Ca) / P in Zn-FHA film was found to be 1.74 whereby the Zn replaced 3.2% of Ca. The rough surface feature in modified HA films was clearly observed in the SEM images and the surface roughness (rms) of Ti and TiN films was 2.49 and 3.5 nm, respectively, as observed using AFM. The film samples were sterilized, treated in the bacteria culture medium, processed and analyzed using SEM. Surface roughness of the films was found to have least influence on the bacterial adhesion. More bacteria were observed on the TiN film with oxide nitride surface layer and less number of adhered bacteria was noticed on the Ti film with native surface oxide layer and on Zn-FHA film.

Bacterial adhesion studies on titanium, titanium nitride and modified hydroxyapatite thin films

International Nuclear Information System (INIS)

Jeyachandran, Y.L.; Venkatachalam, S.; Karunagaran, B.; Narayandass, Sa.K.; Mangalaraj, D.; Bao, C.Y.; Zhang, C.L.

2007-01-01

A qualitative study on adhesion of the oral bacteria Porphyromonas gingivalis on titanium (Ti), titanium nitride (TiN), fluorine modified hydroxyapatite (FHA) and zinc modified FHA (Zn-FHA) thin films is investigated. Ti and TiN thin films were deposited by DC magnetron sputtering and hydroxyapatite-based films were prepared by solgel method. The crystalline structure, optical characteristics, chemical composition and surface topography of the films were studied by XRD, optical transmission, XPS, EDAX and AFM measurements. The predominant crystallite orientation in the Ti and TiN films was along (002) and (111) of hcp and cubic structures, respectively. The Ti : O : N composition ratio in the surface of the Ti and TiN films was found to be 7 : 21 : 1 and 3 : 8 : 2, respectively. The atomic concentration ratio (Zn + Ca) / P in Zn-FHA film was found to be 1.74 whereby the Zn replaced 3.2% of Ca. The rough surface feature in modified HA films was clearly observed in the SEM images and the surface roughness (rms) of Ti and TiN films was 2.49 and 3.5 nm, respectively, as observed using AFM. The film samples were sterilized, treated in the bacteria culture medium, processed and analyzed using SEM. Surface roughness of the films was found to have least influence on the bacterial adhesion. More bacteria were observed on the TiN film with oxide nitride surface layer and less number of adhered bacteria was noticed on the Ti film with native surface oxide layer and on Zn-FHA film

Thermodynamics, kinetics and process control of nitriding

DEFF Research Database (Denmark)

Mittemeijer, Eric J.; Somers, Marcel A. J.

1999-01-01

As a prerequisite for predictability of properties obtained by a nitriding treatment of iron-based workpieces, the relation between the process parameters and the composition and structure of the surface layer produced must be known. At present (even) the description of thermodynamic equilibrium...... of pure iron-nitrogen phases has not been achieved fully. It has been shown that taking into account ordering of nitrogen in the epsilon and gamma' iron-nitride phases, leads to an improved understanding of the Fe-N phase diagram. Although thermodynamics indicate the state the system strives for......, the nitriding result is determined largely by the kinetics of the process. The nitriding kinetics have been shown to be characterised by the occurring local near-equilibria and stationary states at surfaces and interfaces, and the diffusion coefficient of nitrogen in the various phases, for which new data have...

Inverse magnetostrictive characteristics of Fe-Co composite materials using gas-nitriding process

Science.gov (United States)

Nakajima, Kenya; Yang, Zhenjun; Narita, Fumio

2018-03-01

The inverse magnetostrictive response, known as the Villari effect, of magnetostrictive materials is a change in magnetization due to an applied stress. It is commonly used for sensor applications. This work deals with the inverse magnetostrictive characteristics of Fe-Co bimetal plates that were subjected gas-nitriding process. Gas-nitriding was performed on bimetal plates for 30 min at 853 K as a surface heat treatment process. The specimens were cooled to room temperature after completing the nitriding treatment. Three-point bending tests were performed on the plates under a magnetic field. The changes on the magnetic induction of the plates due to the applied load are discussed. The effect of the nitriding treatment on the inverse magnetostrictive characteristics, magnetostrictive susceptibility, and magnetic hysteresis loop was examined. Our work represents an important step forward in the development of magnetostrictive sensor materials.

Oxidation effects on the mechanical properties of SiC fiber-reinforced reaction-bonded silicon nitride matrix composites

Science.gov (United States)

Bhatt, Ramakrishna T.

1989-01-01

The room temperature mechanical properties of SiC fiber reinforced reaction bonded silicon nitride composites were measured after 100 hrs exposure at temperatures to 1400 C in nitrogen and oxygen environments. The composites consisted of approx. 30 vol percent uniaxially aligned 142 micron diameter SiC fibers in a reaction bonded Si3N4 matrix. The results indicate that composites heat treated in a nitrogen environment at temperatures to 1400 C showed deformation and fracture behavior equivalent to that of the as-fabricated composites. Also, the composites heat treated in an oxidizing environment beyond 400 C yielded significantly lower tensile strength values. Specifically in the temperature range from 600 to 1000 C, composites retained approx. 40 percent of their as-fabricated strength, and those heat treated in the temperatures from 1200 to 1400 C retained 70 percent. Nonetheless, for all oxygen heat treatment conditions, composite specimens displayed strain capability beyond the matrix fracture stress; a typical behavior of a tough composite.

White light-emitting diodes (LEDs) using (oxy)nitride phosphors

International Nuclear Information System (INIS)

Xie, R-J; Hirosaki, N; Sakuma, K; Kimura, N

2008-01-01

(Oxy)nitride phosphors have attracted great attention recently because they are promising luminescent materials for phosphor-converted white light-emitting diodes (LEDs). This paper reports the luminescent properties of (oxy)nitride phosphors in the system of M-Si-Al-O-N (M = Li, Ca or Sr), and optical properties of white LEDs using a GaN-based blue LED and (oxy)nitride phosphors. The phosphors show high conversion efficiency of blue light, suitable emission colours and small thermal quenching. The bichromatic white LEDs exhibit high luminous efficacy (∼55 lm W -1 ) and the multi-phosphor converted white LEDs show high colour rendering index (Ra 82-95). The results indicate that (oxy)nitride phosphors demonstrate their superior suitability to use as down-conversion luminescent materials in white LEDs

Cathodoluminescence of cubic boron nitride

International Nuclear Information System (INIS)

Tkachev, V.D.; Shipilo, V.B.; Zajtsev, A.M.

1985-01-01

Three optically active defects are detected in mono- and polycrystal cubic boron nitride (β-BN). Analysis of intensity of temperature dependences, halfwidth and energy shift of 1.76 eV narrow phononless line (center GC-1) makes it possible to interprete the observed cathodoluminescence spectra an optical analog of the Moessbaner effect. Comparison of the obtained results with the known data for diamond monocrystals makes it possible to suggest that the detected center GC-1 is a nitrogen vacancy . The conclusion, concerning the Moessbauer optical spectra application, is made to analyze structural perfection of β-BN crystal lattice

Boron nitride nanosheets reinforced glass matrix composites

Czech Academy of Sciences Publication Activity Database

Saggar, Richa; Porwal, H.; Tatarko, P.; Dlouhý, Ivo; Reece, M. J.

2015-01-01

Roč. 114, SEP (2015), S26-S32 ISSN 1743-6753 R&D Projects: GA MŠk(CZ) 7AMB14SK155 EU Projects: European Commission(XE) 264526 Institutional support: RVO:68081723 Keywords : Boron nitride nanosheets * Borosilicate glass * Mechanical properties Subject RIV: JL - Materials Fatigue, Friction Mechanics Impact factor: 1.162, year: 2015

Comparison of ferritic and austenitic plasma nitriding and nitrocarburizing behavior of AISI 4140 low alloy steel

International Nuclear Information System (INIS)

Fattah, M.; Mahboubi, F.

2010-01-01

This paper compares the ferritic and austenitic plasma nitriding and nitrocarburizing behavior of AISI 4140 low alloy steel carried out to improve the surface corrosion resistance. The gas composition for plasma nitriding was 85% N 2 -15% H 2 and that for plasma nitrocarburizing was 85% N 2 -12% H 2 -3% CO 2 . Both treatments were performed for 5 h, for different process temperatures of 570 and 620 o C for ferritic and austenitic plasma treatment, respectively. Optical microscopy, X-ray diffraction and potentiodynamic polarization technique in 3.5% NaCl solution, were used to study the treated surfaces. The results of X-ray analysis revealed that with increasing the treatment temperature from 570 to 620 o C for both treatments, the amount of ε phase decreased and γ' phase increased. Nitrocarburizing treatment resulted in formation of a more amount of ε phase with respect to nitriding treatment. However, the highest amount of ε phase was observed in the ferritic nitrocarburized sample at 570 o C. The sample nitrided at 620 o C exhibited the thickest layer. The potentiodynamic polarization results revealed that after plasma nitriding and nitrocarburizing at 570 o C, corrosion potential increased with respect to the untreated sample due to the noble nitride and carbonitride phases formed on the surface. After increasing the treatment temperature from 570 to 620 o C, corrosion potential decreased due to the less ε phase development in the compound layer and more porous compound layer formed at 620 o C with respect to the treated samples at 570 o C.

Structural and optical properties of amorphous oxygenated iron boron nitride thin films produced by reactive co-sputtering

International Nuclear Information System (INIS)

Essafti, A.; Abouelaoualim, A.; Fierro, J.L.G.; Ech-chamikh, E.

2009-01-01

Amorphous oxygenated iron boron nitride (a-FeBN:O) thin films were prepared by reactive radio-frequency (RF) sputtering, from hexagonal boron nitride chips placed on iron target, under a total pressure of a gas mixture of argon and oxygen maintained at 1 Pa. The films were deposited onto silicon and glass substrates, at room temperature. The power of the generator RF was varied from 150 to 350 W. The chemical and structural analyses were investigated using X-ray photoelectron spectroscopy (XPS), energy dispersive of X-ray and X-ray reflectometry (XRR). The optical properties of the films were obtained from the optical transmittance and reflectance measurements in the ultraviolet-visible-near infrared wavelengths range. XPS reveals the presence of boron, nitrogen, iron and oxygen atoms and also the formation of different chemical bonds such as Fe-O, B-N, B-O and the ternary BNO phase. This latter phase is predominant in the deposited films as observed in the B 1s and N 1s core level spectra. As the RF power increases, the contribution of N-B bonds in the as-deposited films decreases. The XRR results show that the mass density of a-FeBN:O thin films increases from 2.6 to 4.12 g/cm 3 with increasing the RF power from 150 to 350 W. This behavior is more important for films deposited at RF power higher than 150 W, and has been associated with the enhancement of iron atoms in the film structure. The optical band gap decreases from 3.74 to 3.12 eV with increasing the RF power from 150 to 350 W.

Surface enrichment with chrome and nitriding of IF steel under an abnormal glow discharge

International Nuclear Information System (INIS)

Meira, S.R.; Borges, P.C.; Bernardelli, E.A.

2014-01-01

The objective of this work is to evaluate the influence of surface enrichment of IF steel with chrome, and nitriding, the formation of the nitrided layer. Thus, IF steel samples were subjected to surface enrichment process, using 409 stainless steel as a target for sputtering, followed by plasma nitriding, both under a dc abnormal glow discharge. The enrichment treatment was operated at 1200 ° C for 3h. The nitriding treatment was operated at 510 ° C for 2 h. The influence of the treatments on the layers formed was studied through optical microscopy (OM), scan electron microscopy (SEM), X-ray diffraction (XRD) and Vickers microindentation. The results show that the enrichment is effective to enrich the IF surface, furthermore, improves the characteristics of nitriding, comparing nitriding samples to nitriding and enriched, was observed needles of nitrides, as well as a higher hardness, which is associated with the nitrides of chrome, on the nitriding and enriched samples. (author)

Electrochemical properties of lanthanum nitride with calcium nitride additions

International Nuclear Information System (INIS)

Lesunova, R.P.; Fishman, L.S.

1986-01-01

This paper reports on the electrochemical properties of lanthanum nitride with calcium nitride added. The lanthanum nitride was obtained by nitriding metallic lanthanum at 870 K in an ammonia stream. The product contained Cl, Pr, Nd, Sm, Fe, Ca, Cu, Mo, Mg, Al, Si, and Be. The calcium nitride was obtained by nitriding metallic calcium in a nitrogen stream. The conductivity on the LaN/C 3 N 2 system components are shown as a function of temperature. A table shows the solid solutions to be virtually electronic conductors and the lanthanum nitride a mixed conductor

Aluminum Nitride Ceramic as an Optically Stimulable Luminescence Dosimeter Plate

Directory of Open Access Journals (Sweden)

Go Okada

2016-04-01

Full Text Available Photostimulable storage phosphors have been used in a wide range of applications including radiation measurements in one- and two-dimensional spaces, called point dosimetry and radiography. In this work, we report that an aluminum nitride (AlN ceramic plate, which is practically used as a heat sink (SHAPAL®, Tokuyama Corp., Yamaguchi, Japan, shows good optically-stimulated luminescence (OSL properties with sufficiently large signal and capability for imaging applications, and we have characterized the AlN plate for OSL applications. Upon interaction with X-rays, the sample color turns yellowish, due to a radiation-induced photoabsorption band in the UV-blue range below ~500 nm. After irradiating the sample with X-rays, an intense OSL emission can be observed in the UV (360 nm spectral region during stimulation by red light. Although our measurement setup is not optimized, dose detection was confirmed as low as ~3 mGy to over 20 Gy. Furthermore, we have successfully demonstrated that the SHAPAL® AlN ceramic plate has great potential to be used as an imaging plate in radiography.

Optical properties of bulk semiconductors and graphene/boron nitride: the Bethe-Salpeter equation with derivative discontinuity-corrected density functional energies

DEFF Research Database (Denmark)

Yan, Jun; Jacobsen, Karsten W.; Thygesen, Kristian S.

2012-01-01

-dimensional systems of graphene and hexagonal boron-nitride (h-BN) we find good agreement with previous many-body calculations. For the graphene/h-BN interface we find that the fundamental and optical gaps of the h-BN layer are reduced by 2.0 and 0.7 eV, respectively, compared to freestanding h-BN. This reduction......We present an efficient implementation of the Bethe-Salpeter equation (BSE) for optical properties of materials in the projector augmented wave method Grid-based projector-augmented wave method (GPAW). Single-particle energies and wave functions are obtained from the Gritsenko, Leeuwen, Lenthe...

Silicon Nitride Photonic Integration Platforms for Visible, Near-Infrared and Mid-Infrared Applications

Science.gov (United States)

Micó, Gloria; Pastor, Daniel; Pérez, Daniel; Doménech, José David; Fernández, Juan; Baños, Rocío; Alemany, Rubén; Sánchez, Ana M.; Cirera, Josep M.; Mas, Roser

2017-01-01

Silicon nitride photonics is on the rise owing to the broadband nature of the material, allowing applications of biophotonics, tele/datacom, optical signal processing and sensing, from visible, through near to mid-infrared wavelengths. In this paper, a review of the state of the art of silicon nitride strip waveguide platforms is provided, alongside the experimental results on the development of a versatile 300 nm guiding film height silicon nitride platform. PMID:28895906

Optical property of silicon quantum dots embedded in silicon nitride by thermal annealing

Energy Technology Data Exchange (ETDEWEB)

Kim, Baek Hyun, E-mail: bhkim@andrew.cmu.ed [Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, United Sates (United States); Davis, Robert F. [Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, United Sates (United States); Park, Seong-Ju [Nanophotonic Semiconductors Laboratory, Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, 500-712 (Korea, Republic of)

2010-01-01

We present the effects on the thermal annealing of silicon quantum dots (Si QDs) embedded in silicon nitride. The improved photoluminescence (PL) intensities and the red-shifted PL spectra were obtained with annealing treatment in the range of 700 to 1000 {sup o}C. The shifts of PL spectra were attributed to the increase in the size of Si QDs. The improvement of the PL intensities was also attributed to the reduction of point defects at Si QD/silicon nitride interface and in the silicon nitride due to hydrogen passivation effects.

Ion-bombardment-induced reduction in vacancies and its enhanced effect on conductivity and reflectivity in hafnium nitride films

Energy Technology Data Exchange (ETDEWEB)

Gu, Zhiqing; Wang, Jiafu; Hu, Chaoquan; Zhang, Xiaobo; Dang, Jianchen; Gao, Jing; Zheng, Weitao [Jilin University, School of Materials Science and Engineering, Key Laboratory of Mobile Materials, MOE, and State Key Laboratory of Superhard Materials, Changchun (China); Zhang, Sam [Nanyang Technological University, School of Mechanical and Aerospace Engineering, Singapore (Singapore); Wang, Xiaoyi [Chinese Academy of Sciences, Key Laboratory of Optical System Advanced Manufacturing Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Changchun (China); Chen, Hong [Jilin University, Department of Control Science and Engineering, Changchun (China)

2016-08-15

Although the role of ion bombardment on electrical conductivity and optical reflectivity of transition metal nitrides films was reported previously, the results were controversial and the mechanism was not yet well explored. Here, we show that proper ion bombardment, induced by applying the negative bias voltage (V{sub b}), significantly improves the electrical conductivity and optical reflectivity in rocksalt hafnium nitride films regardless of level of stoichiometry (i.e., in both near-stoichiometric HfN{sub 1.04} and over-stoichiometric HfN{sub 1.17} films). The observed improvement arises from the increase in the concentration of free electrons and the relaxation time as a result of reduction in nitrogen and hafnium vacancies in the films. Furthermore, HfN{sub 1.17} films have always much lower electrical conductivity and infrared reflectance than HfN{sub 1.04} films for a given V{sub b}, owing to more hafnium vacancies because of larger composition deviation from HfN exact stoichiometry (N:Hf = 1:1). These new insights are supported by good agreement between experimental results and theoretical calculations. (orig.)

Iron Carbides and Nitrides: Ancient Materials with Novel Prospects.

Science.gov (United States)

Ye, Zhantong; Zhang, Peng; Lei, Xiang; Wang, Xiaobai; Zhao, Nan; Yang, Hua

2018-02-07

Iron carbides and nitrides have aroused great interest in researchers, due to their excellent magnetic properties, good machinability and the particular catalytic activity. Based on these advantages, iron carbides and nitrides can be applied in various areas such as magnetic materials, biomedical, photo- and electrocatalysis. In contrast to their simple elemental composition, the synthesis of iron carbides and nitrides still has great challenges, particularly at the nanoscale, but it is usually beneficial to improve performance in corresponding applications. In this review, we introduce the investigations about iron carbides and nitrides, concerning their structure, synthesis strategy and various applications from magnetism to the catalysis. Furthermore, the future prospects are also discussed briefly. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Chemical exfoliation and optical characterization of threading-dislocation-free gallium-nitride ultrathin nanomembranes

KAUST Repository

Elafandy, Rami T.

2014-11-13

Semiconductor nanostructures have generated tremendous scientific interests as well as practical applications stemming from the engineering of low dimensional physics phenomena. Unlike 0D and 1D nanostructures, such as quantum dots and nanowires, respectively, 2D structures, such as nanomembranes, are unrivalled in their scalability for high yield manufacture and are less challenging in handling with the current transfer techniques. Furthermore, due to their planar geometry, nanomembranes are compatible with the current complementary metal oxide semiconductor (CMOS) technology. Due to these superior characteristics, there are currently different techniques in exfoliating nanomembranes with different crystallinities, thicknesses and compositions. In this work we demonstrate a new facile technique of exfoliating gallium nitride (GaN) nanomembranes with novel features, namely with the non-radiative cores of their threading-dislocations (TDs) being etched away. The exfoliation process is based on engineering the gallium vacancy (VGa) density during the GaN epitaxial growth with subsequent preferential etching. Based on scanning and transmission electron microscopies, as well as micro-photoluminescence measurements, a model is proposed to uncover the physical processes underlying the formation of the nanomembranes. Raman measurements are also performed to reveal the internal strain within the nanomembranes. After transferring these freely suspended 25 nm thin GaN nanomembranes to other substrates, we demonstrate the temperature dependence of their bandgap by photoluminescence technique, in order to shed light on the internal carrier dynamics. © (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Preparation and characterization of silicon nitride (Si−N)-coated carbon fibers and their effects on thermal properties in composites

Energy Technology Data Exchange (ETDEWEB)

Kim, Hyeon-Hye [R& D Division, Korea Institute of Carbon Convergence Technology, Jeonju 561-844 (Korea, Republic of); Nano& Advanced Materials Engineering, Jeonju University, Jeonju 560-759 (Korea, Republic of); Han, Woong [R& D Division, Korea Institute of Carbon Convergence Technology, Jeonju 561-844 (Korea, Republic of); Lee, Hae-seong [Nano& Advanced Materials Engineering, Jeonju University, Jeonju 560-759 (Korea, Republic of); Min, Byung-Gak [Department of Polymer Science & Engineering, Korea National University of Transportation, Chungju 380-702 (Korea, Republic of); Kim, Byung-Joo, E-mail: ap2-kbj@hanmail.net [R& D Division, Korea Institute of Carbon Convergence Technology, Jeonju 561-844 (Korea, Republic of)

2015-10-15

Graphical abstract: We report preparation and characterization of silicon nitride (Si−N)-coated carbon fibers and their effects on thermal properties in composites. Thermally composites showed enhanced thermal conductivity increasing from up to 59% by the thermal network. - Highlights: • A new method of Si−N coating on carbon fibers was reported. • Silane layer were successfully converted to Si−N layer on carbon fiber surface. • Si−N formation was confirmed by FT-IR, XPS, and EDX. • Thermal conductivity of Si−N coated CF composites were enhanced to 0.59 W/mK. - Abstract: This study investigates the effect of silicon nitride (Si−N)-coated carbon fibers on the thermal conductivity of carbon-fiber-reinforced epoxy composite. The surface properties of the Si−N-coated carbon fibers (SiNCFs) were observe using Fourier transform infrared spectroscopy, scanning electron microscopy, energy dispersive spectroscopy, and X-ray photoelectron spectroscopy, and the thermal stability was analyzed using thermogravimetric analysis. SiNCFs were fabricated through the wet thermal treatment of carbon fibers (Step 1: silane finishing of the carbon fibers; Step 2: high-temperature thermal treatment in a N{sub 2}/NH{sub 3} environment). As a result, the Si−N belt was exhibited by SEM. The average thickness of the belt were 450–500 nm. The composition of Si−N was the mixture of Si−N, Si−O, and C−Si−N as confirmed by XPS. Thermal residue of the SiNCFs in air was enhanced from 3% to 50%. Thermal conductivity of the composites increased from 0.35 to 0.59 W/mK after Si−N coating on carbon surfaces.

Semipolar III-nitride laser diodes with zinc oxide cladding.

Science.gov (United States)

Myzaferi, Anisa; Reading, Arthur H; Farrell, Robert M; Cohen, Daniel A; Nakamura, Shuji; DenBaars, Steven P

2017-07-24

Incorporating transparent conducting oxide (TCO) top cladding layers into III-nitride laser diodes (LDs) improves device design by reducing the growth time and temperature of the p-type layers. We investigate using ZnO instead of ITO as the top cladding TCO of a semipolar (202¯1) III-nitride LD. Numerical modeling indicates that replacing ITO with ZnO reduces the internal loss in a TCO clad LD due to the lower optical absorption in ZnO. Lasing was achieved at 453 nm with a threshold current density of 8.6 kA/cm 2 and a threshold voltage of 10.3 V in a semipolar (202¯1) III-nitride LD with ZnO top cladding.

Optical and electronic properties of InGaAs and nitride quantum dots

Energy Technology Data Exchange (ETDEWEB)

Baer, N.

2006-06-15

In the present thesis, the electronic and optical properties of such nanostructures have been investigated for the well established III-V and the new group-III nitride material system. The influence of Coulomb correlations on the optical spectra of InGaAs QDs are studied using a full configuration interaction approach. The resulting multi-exciton spectra for up to twelve excitons are investigated in detail. Characteristic features of the spectra are explained using simplified Hamiltonians that are derived taking into account the relative importance of various interaction contributions. Additionally, we study the electronic and optical properties of self-assembled InN/GaN quantum dots. The existence of an exactly degenerate p-shell is discussed in detail. Dipole and Coulomb matrix elements are calculated from these one-particle wave functions and serve as an input for configuration interaction calculations. We present multi-exciton emission spectra and investigate how Coulomb correlations and oscillator strengths are altered by the built-in electrostatic fields present in these structures. From our results, we predict vanishing exciton and biexciton ground state emission for small lens-shaped dots, which is explained by a careful analysis of the underlying symmetry group. To study the photoluminescence dynamics of an initially excited QD system, we employ a microscopic semiconductor theory. Carrier-carrier correlations beyond the Hartee-Fock level are included within a cluster expansion truncation scheme up to the singlet-doublet level. The influence of these correlations on the spectrum and the photoluminescence dynamics is investigated for the emission into free space as well as for QDs embedded in an optical microcavity. (orig.)

Optical and electronic properties of InGaAs and nitride quantum dots

International Nuclear Information System (INIS)

Baer, N.

2006-06-01

In the present thesis, the electronic and optical properties of such nanostructures have been investigated for the well established III-V and the new group-III nitride material system. The influence of Coulomb correlations on the optical spectra of InGaAs QDs are studied using a full configuration interaction approach. The resulting multi-exciton spectra for up to twelve excitons are investigated in detail. Characteristic features of the spectra are explained using simplified Hamiltonians that are derived taking into account the relative importance of various interaction contributions. Additionally, we study the electronic and optical properties of self-assembled InN/GaN quantum dots. The existence of an exactly degenerate p-shell is discussed in detail. Dipole and Coulomb matrix elements are calculated from these one-particle wave functions and serve as an input for configuration interaction calculations. We present multi-exciton emission spectra and investigate how Coulomb correlations and oscillator strengths are altered by the built-in electrostatic fields present in these structures. From our results, we predict vanishing exciton and biexciton ground state emission for small lens-shaped dots, which is explained by a careful analysis of the underlying symmetry group. To study the photoluminescence dynamics of an initially excited QD system, we employ a microscopic semiconductor theory. Carrier-carrier correlations beyond the Hartee-Fock level are included within a cluster expansion truncation scheme up to the singlet-doublet level. The influence of these correlations on the spectrum and the photoluminescence dynamics is investigated for the emission into free space as well as for QDs embedded in an optical microcavity. (orig.)

Graphitic carbon nitride nanosheets doped graphene oxide for electrochemical simultaneous determination of ascorbic acid, dopamine and uric acid

International Nuclear Information System (INIS)

Zhang, Hanqiang; Huang, Qitong; Huang, Yihong; Li, Feiming; Zhang, Wuxiang; Wei, Chan; Chen, Jianhua; Dai, Pingwang; Huang, Lizhang; Huang, Zhouyi; Kang, Lianping; Hu, Shirong; Hao, Aiyou

2014-01-01

Graphical abstract: Schematic drawing of electrochemical oxidize AA, DA and UA on graphitic carbon nitride nanosheets-graphene oxide composite modified electrode. - Highlights: • Synthesize g-C 3 N 4 , GO and CNNS-GO composite. • CNNS-GO composite was the first time for simultaneous determination of AA, DA and UA. • CNNS-GO/GCE displays fantastic selectivity and sensitivity for AA, DA and UA. • CNNS-GO/GCE was applied to detect real sample with satisfactory results. - Abstract: Graphitic carbon nitride nanosheets with a graphite-like structure have strong covalent bonds between carbon and nitride atoms, and nitrogen atoms in the carbon architecture can accelerate the electron transfer and enhance electrical properties effectually. The graphitic carbon nitride nanosheets-graphene oxide composite was synthesized. And the electrochemical performance of the composite was investigated by cyclic voltammetry and differential pulse voltammetry ulteriorly. Due to the synergistic effects of layer-by-layer structures by π-π stacking or charge-transfer interactions, graphitic carbon nitride nanosheets-graphene oxide composite can improved conductivity, electro-catalytic and selective oxidation performance. The proposed graphitic carbon nitride nanosheets-graphene oxide composite modified electrode was employed for simultaneous determination of ascorbic acid, dopamine and uric acid in their mixture solution, it exhibited distinguished sensitivity, wide linear range and low detection limit. Moreover, the modified electrode was applied to detect urine and dopamine injection sample, and then the samples were spiked with certain concentration of three substances with satisfactory recovery results

Alignment of Boron Nitride Nanofibers in Epoxy Composite Films for Thermal Conductivity and Dielectric Breakdown Strength Improvement.

Science.gov (United States)

Wang, Zhengdong; Liu, Jingya; Cheng, Yonghong; Chen, Siyu; Yang, Mengmeng; Huang, Jialiang; Wang, Hongkang; Wu, Guanglei; Wu, Hongjing

2018-04-15

Development of polymer-based composites with simultaneously high thermal conductivity and breakdown strength has attracted considerable attention owing to their important applications in both electronic and electric industries. In this work, boron nitride (BN) nanofibers (BNNF) are successfully prepared as fillers, which are used for epoxy composites. In addition, the BNNF in epoxy composites are aligned by using a film casting method. The composites show enhanced thermal conductivity and dielectric breakdown strength. For instance, after doping with BNNF of 2 wt%, the thermal conductivity of composites increased by 36.4% in comparison with that of the epoxy matrix. Meanwhile, the breakdown strength of the composite with 1 wt% BNNF is 122.9 kV/mm, which increased by 6.8% more than that of neat epoxy (115.1 kV/mm). Moreover, the composites have maintained a low dielectric constant and alternating current conductivity among the range of full frequency, and show a higher thermal decomposition temperature and glass-transition temperature. The composites with aligning BNNF have wide application prospects in electronic packaging material and printed circuit boards.

Superconducting structure with layers of niobium nitride and aluminum nitride

International Nuclear Information System (INIS)

Murduck, J.M.; Lepetre, Y.J.; Schuller, I.K.; Ketterson, J.B.

1989-01-01

A superconducting structure is formed by depositing alternate layers of aluminum nitride and niobium nitride on a substrate. Deposition methods include dc magnetron reactive sputtering, rf magnetron reactive sputtering, thin-film diffusion, chemical vapor deposition, and ion-beam deposition. Structures have been built with layers of niobium nitride and aluminum nitride having thicknesses in a range of 20 to 350 Angstroms. Best results have been achieved with films of niobium nitride deposited to a thickness of approximately 70 Angstroms and aluminum nitride deposited to a thickness of approximately 20 Angstroms. Such films of niobium nitride separated by a single layer of aluminum nitride are useful in forming Josephson junctions. Structures of 30 or more alternating layers of niobium nitride and aluminum nitride are useful when deposited on fixed substrates or flexible strips to form bulk superconductors for carrying electric current. They are also adaptable as voltage-controlled microwave energy sources. 8 figs

Influence of the structural and compositional properties of PECVD silicon nitride layers on the passivation of AIGaN/GaN HEMTs

NARCIS (Netherlands)

Karouta, F.; Krämer, M.C.J.C.M.; Kwaspen, J.J.M.; Grzegorczyk, A.; Hageman, P.R.; Hoex, B.; Kessels, W.M.M.; Klootwijk, J.H.; Timmering, E.C.; Smit, M.K.; Wang, J.; Shiojima, K.

2008-01-01

We have investigated the influence of the structural and compositional properties of silicon nitride layers on the passivation of AlGaN/GaN HEMTs grown on sapphire substrates by assessing their continuous wave (CW) and pulsed current-voltage (I-V) characteristics. We have looked at the effect of

Boron nitride nanoparticle enhanced prepregs: A novel route for manufacturing aerospace structural composite laminate

Energy Technology Data Exchange (ETDEWEB)

Kelkar, Ajit D., E-mail: kelkar@ncat.edu [Joint School of Nanoscience and Nanoengineering, North Carolina Agricultural and Technical State University, Greensboro, NC, 27401 (United States); Tian, Qiong [Joint School of Nanoscience and Nanoengineering, North Carolina Agricultural and Technical State University, Greensboro, NC, 27401 (United States); School of Science, Xi' an Jiaotong University, Xi' an, 710049 (China); Yu, Demei [School of Science, Xi' an Jiaotong University, Xi' an, 710049 (China); Zhang, Lifeng, E-mail: lzhang@ncat.edu [Joint School of Nanoscience and Nanoengineering, North Carolina Agricultural and Technical State University, Greensboro, NC, 27401 (United States)

2016-06-15

Boron nitride nanoparticles (BNNPs) were surface functionalized and subsequently applied to surface of fiberglass prepregs to fabricate hybrid BNNPs/fiberglass/epoxy composite laminate. A systematic and comparative study on BNNPs functionalization routes and their effects on morphology, mechanical property and thermal conductivity of final BNNPs enhanced composite laminates was performed. The functionalized BNNPs were characterized by Fourier-transform infrared spectroscopy (FT-IR), thermogravimetric analysis (TGA), and scanning electron microscopy (SEM). The composite laminates with surface functionalized BNNPs demonstrated improvement in tensile and flexural strength and modulus as well as in thermal conductivity compared to the composite laminate with pristine BNNPs while physically functionalized BNNPs outperformed chemically functionalized BNNPs in all cases. SEM images indicated better compatibility and dispersion of BNNPs in epoxy matrix following either of functionalization route. BNNPs bear great radiation-shielding capability. This investigation revealed a novel and industrially feasible route to incorporate BNNPs in aerospace structural materials. - Highlights: • BNNPs were surface functionalized and applied onto fiberglass prepreg. • The BNNPs enhanced prepreg was employed to make hybrid BNNPs/fiberglass/epoxy composite laminate. • The hybrid laminate presented significant improvement in mechanical strength and thermal conductivity. • This investigation revealed a novel and industrially feasible route to incorporate BNNPs in aerospace structural materials.

Boron nitride nanoparticle enhanced prepregs: A novel route for manufacturing aerospace structural composite laminate

International Nuclear Information System (INIS)

Kelkar, Ajit D.; Tian, Qiong; Yu, Demei; Zhang, Lifeng

2016-01-01

Boron nitride nanoparticles (BNNPs) were surface functionalized and subsequently applied to surface of fiberglass prepregs to fabricate hybrid BNNPs/fiberglass/epoxy composite laminate. A systematic and comparative study on BNNPs functionalization routes and their effects on morphology, mechanical property and thermal conductivity of final BNNPs enhanced composite laminates was performed. The functionalized BNNPs were characterized by Fourier-transform infrared spectroscopy (FT-IR), thermogravimetric analysis (TGA), and scanning electron microscopy (SEM). The composite laminates with surface functionalized BNNPs demonstrated improvement in tensile and flexural strength and modulus as well as in thermal conductivity compared to the composite laminate with pristine BNNPs while physically functionalized BNNPs outperformed chemically functionalized BNNPs in all cases. SEM images indicated better compatibility and dispersion of BNNPs in epoxy matrix following either of functionalization route. BNNPs bear great radiation-shielding capability. This investigation revealed a novel and industrially feasible route to incorporate BNNPs in aerospace structural materials. - Highlights: • BNNPs were surface functionalized and applied onto fiberglass prepreg. • The BNNPs enhanced prepreg was employed to make hybrid BNNPs/fiberglass/epoxy composite laminate. • The hybrid laminate presented significant improvement in mechanical strength and thermal conductivity. • This investigation revealed a novel and industrially feasible route to incorporate BNNPs in aerospace structural materials.

Application of wetting to fabrication of boron nitride/aluminum composites

International Nuclear Information System (INIS)

Fujii, Hidetoshi; Nakae, Hideo; Okada, Koji

1993-01-01

The focus of this paper is the establishment of a cheap and easy method of manufacturing metal matrix composites by optimizing the wetting and structural properties of the materials used, (i.e. boron nitride/aluminum). Although aluminum is one of the most prominent metals in the fabrication of metal matrix composites, the oxidation of aluminum prevents us from precisely measuring the wetting of ceramics. Therefore, an improved sessile drop method was devised to prevent the oxidation of the aluminum. Using this method, the contact angle between h-BN (hexagonal-BN) and molten Al was measured in a purified He+3%H 2 atmosphere and in a very high vacuum in a temperature range of 1173-1373K. The contact angle progressed through four phases similar to typical ceramics. However, the contact angle became 0 degree in phase 4 at and over 1273K. This contact angle is extremely lower than the contact angles for typical ceramics and it indicates that h-BN is an ideal material for manufacturing a metal matrix composite from the viewpoint of wetting. It was also confirmed that AlN was produced at the solid/liquid interface and caused the contact angle to decrease to 0 degree. AlN has good structural properties whereas h-BN does not. Accordingly, it is suggested that h-BN particles, which have good wetting, be inserted into the Al melt. This will cause the surface of the h-BN to be converted into AlN which has good structural properties. Using this process, a metal matrix composite, which has good structural properties, should be produced. Further, since h-BN is lubricious, a material should be produced which has high wear resistance and good lubricating properties

The influence of surface layer nitriding on phase composition and tribological properties of cast steel

International Nuclear Information System (INIS)

Brzozka, K; Gorka, B; Gawronski, M; Budzynowski, T W

2010-01-01

The effect of two-stage low-temperature nitriding on atomic structure and mechanical properties of selected cast steels is investigated. Conversion electron Moessbauer spectroscopy has been used to investigate nitrides formation. In order to study tribological characteristics, tests of friction and reflecting electron microscopy measurements have been performed. It has been found that thin nitrides layer (composed mainly of γ'-Fe 4 N) arises in the course of the nitriding procedure in most of investigated cast steels, what considerably affects their microstructure and tribological properties.

Low temperature high density plasma nitriding of stainless steel molds for stamping of oxide glasses

Directory of Open Access Journals (Sweden)

Aizawa Tatsuhiko

2016-01-01

Full Text Available Various kinds of stainless steels have been widely utilized as a die for mold- and direct-stamping processes of optical oxide glasses. Since they suffered from high temperature transients and thermal cycles in practice, they must be surface-treated by dry and wet coatings, or, by plasma nitriding. Martensitic stainless steel mold was first wet plated by the nickel phosphate (NiP, which was unstable at the high temperature stamping condition; and, was easy to crystalize or to fracture by itself. This issue of nuisance significantly lowered the productivity in fabrication of optical oxide-glass elements. In the present paper, the stainless steel mold was surface-treated by the low-temperature plasma nitriding. The nitrided layer by this surface modification had higher nitrogen solute content than 4 mass%; the maximum solid-solubility of nitrogen is usually 0.1 mass% in the equilibrium phase diagram. Owing to this solid-solution with high nitrogen concentration, the nitrided layer had high hardness over 1400 HV within its thickness of 50 μm without any formation of nitrides after plasma nitriding at 693 K for 14.4 ks. This plasma-nitrided mold was utilized for mold-stamping of two colored oxide glass plates at 833 K; these plates were successfully deformed and joined into a single glass plate by this stamping without adhesion or galling of oxide glasses onto the nitrided mold surface.

Precipitation of Chromium Nitrides in the Super Duplex Stainless Steel 2507

Science.gov (United States)

Pettersson, Niklas; Pettersson, Rachel F. A.; Wessman, Sten

2015-03-01

Precipitation of chromium nitrides during cooling from temperatures in the range 1373 K to 1523 K (1100 °C to 1250 °C) has been studied for the super duplex stainless steel 2507 (UNS S32750). Characterization with optical, scanning and transmission electron microscopy was combined to quantify the precipitation process. Primarily Cr2N nitrides were found to precipitate with a high density in the interior of ferrite grains. An increased cooling rate and/or an increased austenite spacing clearly promoted nitride formation, resulting in precipitation within a higher fraction of the ferrite grains, and lager nitride particles. Furthermore, formation of the meta-stable CrN was induced by higher cooling rates. The toughness seemed unaffected by nitrides. A slight decrease in pitting resistance was, however, noticed for quenched samples with large amounts of precipitates. The limited adverse effect on pitting resistance is attributed to the small size (~200 nm) of most nitrides. Slower cooling of duplex stainless steels to allow nitrogen partitioning is suggested in order to avoid large nitrides, and thereby produce a size distribution with a smaller detrimental effect on pitting resistance.

The effects of composition and firing cycle on sintering of aluminium nitride

International Nuclear Information System (INIS)

Hewett, C.; Trigg, M.B.

1992-01-01

A central composite design was used to evaluate the relative effects of temperature, time and Y 2 O 3 content on the densification behaviour of a commercial aluminium nitride (AIN). Over the range of the independent variables studied, temperature was found to exert the dominate influence. Low levels of Y 2 O 3 were found to be effective for the densification of AIN. After firing, cubic 3Y 2 O 3.5 Al 2O3 (YAG) was detected for the lower levels of Y 2 O 3 addition. At the higher levels both YAG and 2Y 2 O 3 .Al 2 O 3 were detected. For a dense sample the values obtained for hardness and fracture toughness were comparable to those reported in the literature. 11 refs., 1 tab

Silicon nitride films fabricated by a plasma-enhanced chemical vapor deposition method for coatings of the laser interferometer gravitational wave detector

Science.gov (United States)

Pan, Huang-Wei; Kuo, Ling-Chi; Huang, Shu-Yu; Wu, Meng-Yun; Juang, Yu-Hang; Lee, Chia-Wei; Chen, Hsin-Chieh; Wen, Ting Ting; Chao, Shiuh

2018-01-01

Silicon is a potential substrate material for the large-areal-size mirrors of the next-generation laser interferometer gravitational wave detector operated in cryogenics. Silicon nitride thin films uniformly deposited by a chemical vapor deposition method on large-size silicon wafers is a common practice in the silicon integrated circuit industry. We used plasma-enhanced chemical vapor deposition to deposit silicon nitride films on silicon and studied the physical properties of the films that are pertinent to application of mirror coatings for laser interferometer gravitational wave detectors. We measured and analyzed the structure, optical properties, stress, Young's modulus, and mechanical loss of the films, at both room and cryogenic temperatures. Optical extinction coefficients of the films were in the 10-5 range at 1550-nm wavelength. Room-temperature mechanical loss of the films varied in the range from low 10-4 to low 10-5 within the frequency range of interest. The existence of a cryogenic mechanical loss peak depended on the composition of the films. We measured the bond concentrations of N - H , Si - H , Si - N , and Si - Si bonds in the films and analyzed the correlations between bond concentrations and cryogenic mechanical losses. We proposed three possible two-level systems associated with the N - H , Si - H , and Si - N bonds in the film. We inferred that the dominant source of the cryogenic mechanical loss for the silicon nitride films is the two-level system of exchanging position between a H+ and electron lone pair associated with the N - H bond. Under our deposition conditions, superior properties in terms of high refractive index with a large adjustable range, low optical absorption, and low mechanical loss were achieved for films with lower nitrogen content and lower N - H bond concentration. Possible pairing of the silicon nitride films with other materials in the quarter-wave stack is discussed.

Cathodoluminescence of cubic boron nitride

International Nuclear Information System (INIS)

Tkachev, V.D.; Shipilo, V.B.; Zaitsev, A.M.

1985-01-01

Three types of optically active defect were observed in single-crystal and polycrystalline cubic boron nitride (β-BN). An analysis of the temperature dependences of the intensity, half-width, and energy shift of a narrow zero-phonon line at 1.76 eV (GC-1 center) made it possible to interpret the observed cathodoluminescence spectra as an optical analog of the Moessbauer effect. A comparison of the results obtained in the present study with the available data on diamond single crystals made it possible to identify the observed GC-1 center as a nitrogen vacancy. It was concluded that optical Moessbauer-type spectra can be used to analyze structure defects in the crystal lattice of β-BN

UN2−x layer formed on uranium metal by glow plasma nitriding

International Nuclear Information System (INIS)

Long, Zhong; Hu, Yin; Chen, Lin; Luo, Lizhu; Liu, Kezhao; Lai, Xinchun

2015-01-01

Highlights: • We used a very simple method to prepare nitride layer on uranium metal surface. • This modified layer is nitrogen-rich nitride, which should be written as UN 2−x . • TEM images show the nitride layer is composed of nano-sized grains. • XPS analysis indicates there is uranium with abnormal low valence in the nitride. - Abstract: Glow plasma nitriding is a simple and economical surface treatment method, and this technology was used to prepare nitride layer on the surface of uranium metal with thickness of several microns. The composition and structure of the nitride layer were analyzed by AES and XRD, indicating that this modified layer is nitrogen-rich uranium nitride, which should be written as UN 2−x . TEM images show the nitride layer is composed of nano-sized grains, with compact structure. And XPS analysis indicates there is uranium with abnormal low valence existing in the nitride. After the treated uranium storage in air for a long time, oxygen just entered the surface several nanometers, showing the nitride layer has excellent oxidation resistance. The mechanism of nitride layer formation and low valence uranium appearance is discussed

Optical properties of zirconium oxynitride films: The effect of composition, electronic and crystalline structures

Energy Technology Data Exchange (ETDEWEB)

Carvalho, P. [Centro de Física, Universidade do Minho, 4710-057 Braga (Portugal); Borges, J., E-mail: joelborges@fisica.uminho.pt [Centro de Física, Universidade do Minho, 4710-057 Braga (Portugal); Department of Control Engineering, Faculty of Electrical Engineering, Czech Technical University in Prague, Technická 2, Prague 6 (Czech Republic); Rodrigues, M.S. [Centro de Física, Universidade do Minho, 4710-057 Braga (Portugal); Barradas, N.P. [Centro de Ciências e Tecnologias Nucleares, Instituto Superior Técnico, Universidade de Lisboa, E.N. 10 (km 139,7), 2695-066 Bobadela LRS (Portugal); Alves, E. [Instituto de Plasmas e Fusão Nuclear, Instituto Superior Técnico, Universidade de Lisboa, Av. Rovisco Pais, 1049-001 Lisbon (Portugal); Espinós, J.P.; González-Elipe, A.R. [Instituto de Ciencia de Materiales de Sevilla (CSIC-University Sevilla), Avda. Américo Vespucio 49, 41092 Sevilla (Spain); Cunha, L.; Marques, L.; Vasilevskiy, M.I.; Vaz, F. [Centro de Física, Universidade do Minho, 4710-057 Braga (Portugal)

2015-12-15

Highlights: • Optical behaviour of ZrO{sub x}N{sub y} films were correlated with structural properties. • A continuous depopulation of the d-band and an opening of an energy gap was observed. • Drude–Lorentz parameters changed for the metallic samples. • Optical bandgap of the films increases with non-metallic elements incorporation. - Abstract: This work is devoted to the investigation of zirconium oxynitride (ZrO{sub x}N{sub y}) films with varied optical responses prompted by the variations in their compositional and structural properties. The films were prepared by dc reactive magnetron sputtering of Zr, using Ar and a reactive gas mixture of N{sub 2} + O{sub 2} (17:3). The colour of the films changed from metallic-like, very bright yellow-pale and golden yellow, for low gas flows to red-brownish for intermediate gas flows. Associated to this colour change there was a significant decrease of brightness. With further increase of the reactive gas flow, the colour of the samples changed from red-brownish to dark blue or even to interference colourations. The variations in composition disclosed the existence of four different zones, which were found to be closely related with the variations in the crystalline structure. XRD analysis revealed the change from a B1 NaCl face-centred cubic zirconium nitride-type phase for films prepared with low reactive gas flows, towards a poorly crystallized over-stoichiometric nitride phase, which may be similar to that of Zr{sub 3}N{sub 4} with some probable oxygen inclusions within nitrogen positions, for films prepared with intermediate reactive gas flows. For high reactive gas flows, the films developed an oxynitride-type phase, similar to that of γ-Zr{sub 2}ON{sub 2} with some oxygen atoms occupying some of the nitrogen positions, evolving to a ZrO{sub 2} monoclinic type structure within the zone where films were prepared with relatively high reactive gas flows. The analysis carried out by reflected electron energy

Optical and Micro-Structural Characterization of MBE Grown Indium Gallium Nitride Polar Quantum Dots

KAUST Repository

El Afandy, Rami

2011-01-01

Gallium nitride and related materials have ushered in scientific and technological breakthrough for lighting, mass data storage and high power electronic applications. These III-nitride materials have found their niche in blue light emitting diodes

High temperature resistant cermet and ceramic compositions

Science.gov (United States)

Phillips, W. M. (Inventor)

1978-01-01

Cermet compositions having high temperature oxidation resistance, high hardness and high abrasion and wear resistance, and particularly adapted for production of high temperature resistant cermet insulator bodies are presented. The compositions are comprised of a sintered body of particles of a high temperature resistant metal or metal alloy, preferably molybdenum or tungsten particles, dispersed in and bonded to a solid solution formed of aluminum oxide and silicon nitride, and particularly a ternary solid solution formed of a mixture of aluminum oxide, silicon nitride and aluminum nitride. Also disclosed are novel ceramic compositions comprising a sintered solid solution of aluminum oxide, silicon nitride and aluminum nitride.

Mobility in n-doped wurtzite III-Nitrides

Directory of Open Access Journals (Sweden)

C.G. Rodrigues

2003-01-01

Full Text Available A study of the mobility of n-doped wurtzite III-Nitrides is reported. We have determined the nonequilibrium thermodynamic state of the III-Nitrides systems driven far away from equilibrium by a strong electric field in the steady state, which follows after a very fast transient. The dependence of the mobility (which depends on the nonequilibrium thermodynamic state of the sample on the electric field strength is derived, which decreases with the strength of electric field. We analyzed the contributions to the mobility arising out of the different channels of electron scattering, namely, the polar optic, deformation, piezoelectric, interactions with the phonons, and with impurities. The case of n-InN, n-GaN, and n-AlN have been analyzed: as expected the main contribution comes from the polar-optic interactions in these strongly polar semiconductors. The other interactions are in decreasing order, the deformation acoustic, the piezoelectric, and the one due to impurities.

Characterization of nitrides in an AISI 1010 steel

International Nuclear Information System (INIS)

Naquid G, C.

1998-01-01

It was characterized the phase formation in the 1010 carbon steel nitrided in a plasma reactor nearby to eutectoid point. The microstructure and identification of these ones were evaluated by Optical microscopy (OM), Dilatometry and X-ray diffraction (XRD). (Author)

Correlations between optical properties, microstructure, and processing conditions of Aluminum nitride thin films fabricated by pulsed laser deposition

International Nuclear Information System (INIS)

Baek, Jonghoon; Ma, James; Becker, Michael F.; Keto, John W.; Kovar, Desiderio

2007-01-01

Aluminum nitride (AlN) films were deposited using pulsed laser deposition (PLD) onto sapphire (0001) substrates with varying processing conditions (temperature, pressure, and laser fluence). We have studied the dependence of optical properties, structural properties and their correlations for these AlN films. The optical transmission spectra of the produced films were measured, and a numerical procedure was applied to accurately determine the optical constants for films of non-uniform thickness. The microstructure and texture of the films were studied using various X-ray diffraction techniques. The real part of the refractive index was found to not vary significantly with processing parameters, but absorption was found to be strongly dependent on the deposition temperature and the nitrogen pressure in the deposition chamber. We report that low optical absorption, textured polycrystalline AlN films can be produced by PLD on sapphire substrates at both low and high laser fluence using a background nitrogen pressure of 6.0 x 10 -2 Pa (4.5 x 10 -4 Torr) of 99.9% purity

Hexagonal Boron Nitride Impregnated Silane Composite Coating for Corrosion Resistance of Magnesium Alloys for Temporary Bioimplant Applications

Directory of Open Access Journals (Sweden)

Saad Al-Saadi

2017-11-01

Full Text Available Magnesium and its alloys are attractive potential materials for construction of biodegradable temporary implant devices. However, their rapid degradation in human body fluid before the desired service life is reached necessitate the application of suitable coatings. To this end, WZ21 magnesium alloy surface was modified by hexagonal boron nitride (hBN-impregnated silane coating. The coating was chemically characterised by Raman spectroscopy. Potentiodynamic polarisation and electrochemical impedance spectroscopy (EIS of the coated alloy in Hanks’ solution showed a five-fold improvement in the corrosion resistance of the alloy due to the composite coating. Post-corrosion analyses corroborated the electrochemical data and provided a mechanistic insight of the improvement provided by the composite coating.

Plasma nitriding of CA-6NM steel: effect of H2 + N2 gas mixtures in nitride layer formation for low N2 contents at 500 ºC

Directory of Open Access Journals (Sweden)

Angela Nardelli Allenstein

2010-12-01

Full Text Available This work aims to characterize the phases, thickness, hardness and hardness profiles of the nitride layers formed on the CA-6NM martensitic stainless steel which was plasma nitrided in gas mixtures containing different nitrogen amounts. Nitriding was performed at 500 ºC temperature, and 532 Pa (4 Torr pressure, for gas mixtures of 5% N2 + 95% H2, 10% N2 + 90% H2, and 20% N2 + 80% H2, and 2 hours nitriding time. A 6 hours nitriding time condition for gas mixture of 5% N2 + 95% H2 was also studied. Nitrided samples results were compared with non-nitrided condition. Thickness and microstructure of the nitrided layers were characterized by optical microscopy (OM, using Villela and Nital etchants, and the phases were identified by X-ray diffraction. Hardness profiles and hardness measured on surface steel were determined using Vickers hardness and nanoindentation tester, respectively. It was verified that nitrided layer produced in CA-6NM martensitc stainless steel is constituted of compound layer, being that formation of the diffusion zone was not observed for the studied conditions. The higher the nitrogen amounts in gas mixture the higher is the thickness of the nitrided layer and the probability to form different nitride phases, in the case γ'-Fe4N, ε-Fe2-3N and CrN phases. Intrinsic hardness of the nitrided layers produced in the CA-6NM stainless steel is about 12-14 GPa (~1200-1400 HV.

Surface modification of austenitic steel by various glow-discharge nitriding methods

Directory of Open Access Journals (Sweden)

Tomasz Borowski

2015-09-01

Full Text Available Recent years have seen intensive research on modifying glow-discharge nitriding processes. One of the most commonly used glow-discharge methods includes cathodic potential nitriding (conventional method, and active screen plasma nitriding. Each of these methods has a number of advantages. One very important, common feature of these techniques is full control of the microstructure, chemical and phase composition, thickness and the surface topography of the layers formed. Another advantage includes the possibility of nitriding such materials as: austenitic steels or nickel alloys, i.e. metallic materials which do not diffuse nitrogen as effectively as ferritic or martensitic steels. However, these methods have some disadvantages as well. In the case of conventional plasma nitriding, engineers have to deal with the edge effect, which makes it difficult to use this method for complexly shaped components. In turn, in the case of active screen plasma nitriding, the problem disappears. A uniform, smooth layer forms, but is thinner, softer and is not as resistant to friction compared to layers formed using the conventional method. Research is also underway to combine these methods, i.e. use an active screen in conventional plasma nitriding at cathodic potential. However, there is a lack of comprehensive data presenting a comparison between these three nitriding processes and the impact of pulsating current on the formation of the microstructure and functional properties of austenitic steel surfaces. The article presents a characterisation of nitrided layers produced on austenitic X2CrNiMo17-12-2 (AISI 316L stainless steel in the course of glow-discharge nitriding at cathodic potential, at plasma potential and at cathodic potential incorporating an active screen. All processes were carried out at 440 °C under DC glow-discharge conditions and in 100 kHz frequency pulsating current. The layers were examined in terms of their microstructure, phase and

Linear and nonlinear characterization of low-stress high-confinement silicon-rich nitride waveguides.

Science.gov (United States)

Krückel, Clemens J; Fülöp, Attila; Klintberg, Thomas; Bengtsson, Jörgen; Andrekson, Peter A; Torres-Company, Víctor

2015-10-05

In this paper we introduce a low-stress silicon enriched nitride platform that has potential for nonlinear and highly integrated optics. The manufacturing process of this platform is CMOS compatible and the increased silicon content allows tensile stress reduction and crack free layer growth of 700 nm. Additional benefits of the silicon enriched nitride is a measured nonlinear Kerr coefficient n(2) of 1.4·10(-18) m(2)/W (5 times higher than stoichiometric silicon nitride) and a refractive index of 2.1 at 1550 nm that enables high optical field confinement allowing high intensity nonlinear optics and light guidance even with small bending radii. We analyze the waveguide loss (∼1 dB/cm) in a spectrally resolved fashion and include scattering loss simulations based on waveguide surface roughness measurements. Detailed simulations show the possibility for fine dispersion and nonlinear engineering. In nonlinear experiments we present continuous-wave wavelength conversion and demonstrate that the material does not show nonlinear absorption effects. Finally, we demonstrate microfabrication of resonators with high Q-factors (∼10(5)).

Effect of gas pressure on active screen plasma nitriding response

International Nuclear Information System (INIS)

Nishimoto, Akio; Nagatsuka, Kimiaki; Narita, Ryota; Nii, Hiroaki; Akamatsu, Katsuya

2010-01-01

An austenitic stainless steel AISI 304 was active screen plasma nitrided using a 304 steel screen to investigate the effect of the gas pressure on the ASPN response. The sample was treated for 18 ks at 723 K in 25% N2 + 75% H2 gases. The gas pressure was changed to 100, 600 and 1200 Pa. The distance between screen and sample was also changed to 10, 30 and 50 mm. The nitrided samples were characterized by appearance observation, surface roughness, optical microscopy, X-ray diffraction, and microhardness testing. After nitriding, polygonal particles with a normal distribution were observed at the center and edges of all the ASPN-treated sample surfaces. Particles on the sample surfaces were finer with an increase in the gas pressure. The nitrided layer with a greater and homogeneous thickness was obtained at a low gas pressure of 100 Pa. (author)

Polymeric carbon nitride/mesoporous silica composites as catalyst support for Au and Pt nanoparticles.

Science.gov (United States)

Xiao, Ping; Zhao, Yanxi; Wang, Tao; Zhan, Yingying; Wang, Huihu; Li, Jinlin; Thomas, Arne; Zhu, Junjiang

2014-03-03

Small and homogeneously dispersed Au and Pt nanoparticles (NPs) were prepared on polymeric carbon nitride (CNx )/mesoporous silica (SBA-15) composites, which were synthesized by thermal polycondensation of dicyandiamide-impregnated preformed SBA-15. By changing the condensation temperature, the degree of condensation and the loading of CNx can be controlled to give adjustable particle sizes of the Pt and Au NPs subsequently formed on the composites. In contrast to the pure SBA-15 support, coating of SBA-15 with polymeric CNx resulted in much smaller and better-dispersed metal NPs. Furthermore, under catalytic conditions the CNx coating helps to stabilize the metal NPs. However, metal NPs on CNx /SBA-15 can show very different catalytic behaviors in, for example, the CO oxidation reaction. Whereas the Pt NPs already show full CO conversion at 160 °C, the catalytic activity of Au NPs seems to be inhibited by the CNx support. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Silicon nitride photonics: from visible to mid-infrared wavelengths

Science.gov (United States)

Micó, Gloria; Bru, Luis A.; Pastor, Daniel; Doménech, David; Fernández, Juan; Sánchez, Ana; Cirera, Josep M.; Domínguez, Carlos; Muñoz, Pascual

2018-02-01

Silicon nitride has received a lot of attention during the last ten years, for applications such as bio-photonics, tele/datacom, optical signal processing and sensing. In this paper, firstly an updated review of the state of the art of silicon nitride photonics integration platforms will be provided. Secondly, our developments on a moderate confinement Si3N4 platform in the near-infrared will be presented. Finally, our steps towards establishing a Si3N4 based platform for broadband operation spanning from visible to mid-infrared wavelengths will be introduced.

Improving optical properties of silicon nitride films to be applied in the middle infrared optics by a combined high-power impulse/unbalanced magnetron sputtering deposition technique.

Science.gov (United States)

Liao, Bo-Huei; Hsiao, Chien-Nan

2014-02-01

Silicon nitride films are prepared by a combined high-power impulse/unbalanced magnetron sputtering (HIPIMS/UBMS) deposition technique. Different unbalance coefficients and pulse on/off ratios are applied to improve the optical properties of the silicon nitride films. The refractive indices of the Si3N4 films vary from 2.17 to 2.02 in the wavelength ranges of 400-700 nm, and all the extinction coefficients are smaller than 1×10(-4). The Fourier transform infrared spectroscopy and x-ray diffractometry measurements reveal the amorphous structure of the Si3N4 films with extremely low hydrogen content and very low absorption between the near IR and middle IR ranges. Compared to other deposition techniques, Si3N4 films deposited by the combined HIPIMS/UBMS deposition technique possess the highest refractive index, the lowest extinction coefficient, and excellent structural properties. Finally a four-layer coating is deposited on both sides of a silicon substrate. The average transmittance from 3200 to 4800 nm is 99.0%, and the highest transmittance is 99.97% around 4200 nm.

The effect of the phase composition of compound layer on the growth kinetics of the nitrided layer

International Nuclear Information System (INIS)

Ratajski, J.; Olik, R.; Suszko, T.; Tacikowski, J.

2001-01-01

This paper presents a part of research work on the kinetics of formation and growth of nitrided layers on 40HM steel that was conducted within the research project devoted to the control of gaseous nitriding processes. The purpose of the research was to find answers to still opened questions connected with the optimization of the growth kinetics of nitrided layer. It has been demonstrated in particular how important in diffusion layer kinetics of growth on steel is the role-played by compound layer phase composition. Mainly, this refers to designing changes of parameters in processes where accurate formation of layer on precise parts with required tolerance of size changes is demanded. It comes out of the presented research that proper diffusion layer growth kinetics can be achieved when phase ε dominates in the compound layer. This domination of the phase ε influences speed of growth of the compound layer and first of all growth of diffusion layer. The obtained results are also a starting point of for working-out of good functional relations which could create good basis for design of algorithms of potential values changes in the function of the process time which provides the optimal kinetics of the growth of the layers. In this respect it has been achieved very good qualitative relation between the simulated distribution of nitrogen concentration in the layer and experimentally established distribution of hardness. (author)

Effect of microstructure on the high temperature strength of nitride

Indian Academy of Sciences (India)

Effect of microstructure on the high temperature strength of nitride bonded silicon carbide composite. J Rakshit P K Das. Composites Volume ... The effect of these parameters on room temperature and high temperature strength of the composite up to 1300°C in ambient condition were studied. The high temperature flexural ...

UN{sub 2−x} layer formed on uranium metal by glow plasma nitriding

Energy Technology Data Exchange (ETDEWEB)

Long, Zhong [China Academy of Engineering Physics, P.O. Box 919-71, Mianyang 621907 (China); Hu, Yin [Science and Technology on Surface Physics and Chemistry Laboratory, P.O. Box 718-35, Mianyang 621907 (China); Chen, Lin [China Academy of Engineering Physics, P.O. Box 919-71, Mianyang 621907 (China); Luo, Lizhu [Science and Technology on Surface Physics and Chemistry Laboratory, P.O. Box 718-35, Mianyang 621907 (China); Liu, Kezhao, E-mail: liukz@hotmail.com [Science and Technology on Surface Physics and Chemistry Laboratory, P.O. Box 718-35, Mianyang 621907 (China); Lai, Xinchun, E-mail: lai319@yahoo.com [Science and Technology on Surface Physics and Chemistry Laboratory, P.O. Box 718-35, Mianyang 621907 (China)

2015-01-25

Highlights: • We used a very simple method to prepare nitride layer on uranium metal surface. • This modified layer is nitrogen-rich nitride, which should be written as UN{sub 2−x}. • TEM images show the nitride layer is composed of nano-sized grains. • XPS analysis indicates there is uranium with abnormal low valence in the nitride. - Abstract: Glow plasma nitriding is a simple and economical surface treatment method, and this technology was used to prepare nitride layer on the surface of uranium metal with thickness of several microns. The composition and structure of the nitride layer were analyzed by AES and XRD, indicating that this modified layer is nitrogen-rich uranium nitride, which should be written as UN{sub 2−x}. TEM images show the nitride layer is composed of nano-sized grains, with compact structure. And XPS analysis indicates there is uranium with abnormal low valence existing in the nitride. After the treated uranium storage in air for a long time, oxygen just entered the surface several nanometers, showing the nitride layer has excellent oxidation resistance. The mechanism of nitride layer formation and low valence uranium appearance is discussed.

An Amorphous Carbon Nitride Composite Derived from ZIF-8 as Anode Material for Sodium-Ion Batteries.

Science.gov (United States)

Fan, Jing-Min; Chen, Jia-Jia; Zhang, Qian; Chen, Bin-Bin; Zang, Jun; Zheng, Ming-Sen; Dong, Quan-Feng

2015-06-08

An composite comprising amorphous carbon nitride (ACN) and zinc oxide is derived from ZIF-8 by pyrolysis. The composite is a promising anode material for sodium-ion batteries. The nitrogen content of the ACN composite is as high as 20.4 %, and the bonding state of nitrogen is mostly pyridinic, as determined by X-ray photoelectron spectroscopy (XPS). The composite exhibits an excellent Na(+) storage performance with a reversible capacity of 430 mA h g(-1) and 146 mA h g(-1) at current densities of 83 mA g(-1) and 8.33 A g(-1) , respectively. A specific capacity of 175 mA h g(-1) was maintained after 2000 cycles at 1.67 A g(-1) , with only 0.016 % capacity degradation per cycle. Moreover, an accelerating rate calorimetry (ARC) test demonstrates the excellent thermal stability of the composite, with a low self heating rate and high onset temperature (210 °C). These results shows its promise as a candidate material for high-capacity, high-rate anodes for sodium-ion batteries. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

III-nitrides, 2D transition metal dichalcogenides, and their heterojunctions

KAUST Repository

Mishra, Pawan

2017-04-01

Group III-nitride materials have attracted great attention for applications in high efficiency electronic and optoelectronics devices such as high electron mobility transistors, light emitting diodes, and laser diodes. On the other hand, group VI transition metal dichalcogenides (TMDs) in the form of MX2 has recently emerged as a novel atomic layered material system with excellent thermoelectric, electronic and optoelectronic properties. Also, the recent investigations reveal that the dissimilar heterojunctions formed by TMDs and III-nitrides provide the route for novel devices in the area of optoelectronic, electronics, and water splitting applications. In addition, integration of III-nitrides and TMDs will enable high density integrated optoelectronic circuits and the development of hybrid integration technologies. In this work, we have demonstrated kinetically controlled growth processes in plasma assisted molecular beam epitaxy (PAMBE) for the III-nitrides and their engineered heterostructures. Techniques such as Ga irradiation and nitrogen plasma exposure has been utilized to implement bulk GaN, InGaN and their heterostructures in PAMBE. For the growth of III-nitride based heterostructures, the in-situ surface stoichiometry monitoring (i-SSM) technique was developed and used for implementing stepped and compositionally graded InGaN-based multiple quantum wells (MQWs). Their optical and microstrain analysis in conjunction with theoretical studies confirmed improvement in the radiative recombination rate of the graded-MQWs as compared to that of stepped-MQWs, owing to the reduced strain in graded-MQWs. Our achievement also includes the realization of the p-type MoS2 by engineering pristine MoS2 layers in PAMBE. Mainly, Ga and nitrogen plasma irradiation on the pristine MoS2 in PAMBE has resulted in the realization of the p-type MoS2. Also, GaN epitaxial thin layers were deposited on MoS2/c-sapphire, WSe2/c-sapphire substrates by PAMBE to study the band

Modification of Low-Alloy Steel Surface by High-Temperature Gas Nitriding Plus Tempering

Science.gov (United States)

Jiao, Dongling; Li, Minsong; Ding, Hongzhen; Qiu, Wanqi; Luo, Chengping

2018-02-01

The low-alloy steel was nitrided in a pure NH3 gas atmosphere at 640 660 °C for 2 h, i.e., high-temperature gas nitriding (HTGN), followed by tempering at 225 °C, which can produce a high property surface coating without brittle compound (white) layer. The steel was also plasma nitriding for comparison. The composition, microstructure and microhardness of the nitrided and tempered specimens were examined, and their tribological behavior investigated. The results showed that the as-gas-nitrided layer consisted of a white layer composed of FeN0.095 phase (nitrided austenite) and a diffusional zone underneath the white layer. After tempering, the white layer was decomposed to a nano-sized (α-Fe + γ'-Fe4N + retained austenite) bainitic microstructure with a high hardness of 1150HV/25 g. Wear test results showed that the wear resistance and wear coefficient yielded by the complex HTGN plus tempering were considerably higher and lower, respectively, than those produced by the conventional plasma nitriding.

Bio-functionalization of silicon nitride-based piezo-resistive ...

Indian Academy of Sciences (India)

Methods of bio-functionalize silicon nitride involve process steps to ... substance in applications such as clinical analysis, environmental control and industrial pro- ... anisms could be optical (measure the deflection), or measurement of a change in ... point of care (PoC), and the instrumentation involved is quite sophisticated.

Formation of zirconium nitride via mechanochemical decomposition of zircon

International Nuclear Information System (INIS)

Puclin, T.; Kaczmarek, W.A.

1996-01-01

In this paper we report some results of the mechanochemical reduction of zircon, and for the first time subsequent reaction with nitrogen to form zirconium nitride (ZrN). This process can be described by the equation: 3ZrSiO 4 + 8Al + 1.5N 2 = 4Al 2 O 3 + 3ZrN + 3Si. Milling was carried out in three steps: 1) low speed grinding of Al+ZrSiO 4 in vacuum, 2) high speed milling to effect the reduction, and 3) continued milling after the addition of nitrogen. Powders produced were examined by X-ray diffraction. The first step showed no reaction occurred during low speed grinding. The second step proved to be a slow reaction without the 'ignition' often seen in other mechanochemical reduction works. The final step was also gradual, and did not always go to full nitridation over the duration of the experiment, giving a product of composition ZrN 0.6 to ZrN l.0 . This is quite acceptable as transition metal nitrides are often non-stoichiometric. These results show that the formation of a useful hard material such as ZrN can be formed from a raw mineral by two stage mechanochemical processing. Further investigations are currently being undertaken to eliminate Fe contamination and produce pure ceramic oxide-nitride composites

Transferrable monolithic III-nitride photonic circuit for multifunctional optoelectronics

Science.gov (United States)

Shi, Zheng; Gao, Xumin; Yuan, Jialei; Zhang, Shuai; Jiang, Yan; Zhang, Fenghua; Jiang, Yuan; Zhu, Hongbo; Wang, Yongjin

2017-12-01

A monolithic III-nitride photonic circuit with integrated functionalities was implemented by integrating multiple components with different functions into a single chip. In particular, the III-nitride-on-silicon platform is used as it integrates a transmitter, a waveguide, and a receiver into a suspended III-nitride membrane via a wafer-level procedure. Here, a 0.8-mm-diameter suspended device architecture is directly transferred from silicon to a foreign substrate by mechanically breaking the support beams. The transferred InGaN/GaN multiple-quantum-well diode (MQW-diode) exhibits a turn-on voltage of 2.8 V with a dominant electroluminescence peak at 453 nm. The transmitter and receiver share an identical InGaN/GaN MQW structure, and the integrated photonic circuit inherently works for on-chip power monitoring and in-plane visible light communication. The wire-bonded monolithic photonic circuit on glass experimentally demonstrates in-plane data transmission at 120 Mb/s, paving the way for diverse applications in intelligent displays, in-plane light communication, flexible optical sensors, and wearable III-nitride optoelectronics.

Gallium nitride-based micro-opto-electro-mechanical systems

Science.gov (United States)

Stonas, Andreas Robert

Gallium Nitride and its associated alloys InGaN and AlGaN have many material properties that are highly desirable for micro-electro-mechanical systems (MEMS), and more specifically micro-opto-electro-mechanical systems (MOEMS). The group III-nitrides are tough, stiff, optically transparent, direct bandgap, chemically inert, highly piezoelectric, and capable of functioning at high temperatures. There is currently no other semiconductor system that possesses all of these properties. Taken together, these attributes make the nitrides prime candidates not only for creating new versions of existing device structures, but also for creating entirely unique devices which combine these properties in novel ways. Unfortunately, their chemical resiliency also makes the group III-nitrides extraordinarily difficult to shape into devices. In particular, until this research, no undercut etch technology existed that could controllably separate a selected part of a MEMS device from its sapphire or silicon carbide substrate. This has effectively prevented GaN-based MEMS from being developed. This dissertation describes how this fabrication obstacle was overcome by a novel etching geometry (bandgap-selective backside-illuminated photoelectochemical (BS-BIPEC) etching) and its resulting morphologies. Several gallium-nitride based MEMS devices were created, actuated, and modelled, including cantilevers and membranes. We describe in particular our pursuit of one of the many novel device elements that is possible only in this material system: a transducer that uses an externally applied strain to dynamically change the optical transition energy of a quantum well. While the device objective of a dynamically tunable quantum well was not achieved, we have demonstrated sufficient progress to believe that such a device will be possible soon. We have observed a shift (5.5meV) of quantum well transition energies in released structures, and we have created structures that can apply large biaxial

Thermodynamics, kinetics and process control of nitriding

DEFF Research Database (Denmark)

Mittemeijer, Eric J.; Somers, Marcel A. J.

1997-01-01

As a prerequisite for the predictability of properties obtained by a nitriding treatment of iron based workpieces, the relation between the process parameters and the composition and structure of the surface layer produced must be known. At present, even the description of thermodynamic equilibrium...... of pure Fe-N phases has not been fully achieved. It is shown that taking into account the ordering of nitrogen in the epsilon and gamma' iron nitride phases leads to an improved understanding of the Fe-N phase diagram. Although consideration of thermodynamics indicates the state the system strives for...... for process control of gaseous nitriding by monitoring the partial pressure of oxygen in the furnace using a solid state electrolyte is provided. At the time the work was carried out the authors were in the Laboratory of Materials Science, Delft University of Technology, Rotterdamseweg 137, 2628 AL Delft...

Simple process to fabricate nitride alloy powders

International Nuclear Information System (INIS)

Yang, Jae Ho; Kim, Dong-Joo; Kim, Keon Sik; Rhee, Young Woo; Oh, Jang-Soo; Kim, Jong Hun; Koo, Yang Hyun

2013-01-01

Uranium mono-nitride (UN) is considered as a fuel material [1] for accident-tolerant fuel to compensate for the loss of fissile fuel material caused by adopting a thickened cladding such as SiC composites. Uranium nitride powders can be fabricated by a carbothermic reduction of the oxide powders, or the nitriding of metal uranium. Among them, a direct nitriding process of metal is more attractive because it has advantages in the mass production of high-purity powders and the reusing of expensive 15 N 2 gas. However, since metal uranium is usually fabricated in the form of bulk ingots, it has a drawback in the fabrication of fine powders. The Korea Atomic Energy Research Institute (KAERI) has a centrifugal atomisation technique to fabricate uranium and uranium alloy powders. In this study, a simple reaction method was tested to fabricate nitride fuel powders directly from uranium metal alloy powders. Spherical powder and flake of uranium metal alloys were fabricated using a centrifugal atomisation method. The nitride powders were obtained by thermal treating the metal particles under nitrogen containing gas. The phase and morphology evolutions of powders were investigated during the nitriding process. A phase analysis of nitride powders was also part of the present work. KAERI has developed the centrifugal rotating disk atomisation process to fabricate spherical uranium metal alloy powders which are used as advanced fuel materials for research reactors. The rotating disk atomisation system involves the tasks of melting, atomising, and collecting. A nozzle in the bottom of melting crucible introduces melt at the center of a spinning disk. The centrifugal force carries the melt to the edge of the disk and throws the melt off the edge. Size and shape of droplets can be controlled by changing the nozzle size, the disk diameter and disk speed independently or simultaneously. By adjusting the processing parameters of the centrifugal atomiser, a spherical and flake shape

Boron nitride nanotube reinforced polylactide-polycaprolactone copolymer composite: mechanical properties and cytocompatibility with osteoblasts and macrophages in vitro.

Science.gov (United States)

Lahiri, Debrupa; Rouzaud, Francois; Richard, Tanisha; Keshri, Anup K; Bakshi, Srinivasa R; Kos, Lidia; Agarwal, Arvind

2010-09-01

Biodegradable polylactide-polycaprolactone copolymer (PLC) has been reinforced with 0, 2 and 5wt.% boron nitride nanotubes (BNNTs) for orthopedic scaffold application. Elastic modulus of the PLC-5wt.% BNNT composite, evaluated through nanoindentation technique, shows a 1370% increase. The same amount of BNNT addition to PLC enhances the tensile strength by 109%, without any adverse effect on the ductility up to 240% elongation. Interactions of the osteoblasts and macrophages with bare BNNTs prove them to be non-cytotoxic. PLC-BNNT composites displayed increased osteoblast cell viability as compared to the PLC matrix. The addition of BNNTs also resulted in an increase in the expression levels of the Runx2 gene, the main regulator of osteoblast differentiation. These results indicate that BNNT is a potential reinforcement for composites for orthopedic applications. 2010 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Microstructure characterization of fluidized bed nitrided Fe–Si and ...

Indian Academy of Sciences (India)

Unknown

The investi- gations on the nitrided samples were carried out by optical and SEM microscopic observations, X-ray ... Many studies have been carried out in the past to improve ... Experimental. The Fe .... The same is true for the FeSiAl sample.

A new quantitative analysis on nitriding kinetics in the oxidized Zry-4 at 900-1200 .deg. C

Energy Technology Data Exchange (ETDEWEB)

Park, Sanggi [ACT Co. Ltd., Daejeon (Korea, Republic of)

2016-10-15

Two major roles of nitrogen on the zirconium based cladding degradation were identified: mechanical degradation of the cladding, and the additional chemical heat release. It has long been known that accelerated oxidation can occur in air due to the nitrogen. In addition, significant uptake of nitrogen can also occur. The nitriding of pre-oxidized zirconium based alloys leads to micro porous and less coherent oxide scales. This paper aims to quantitatively investigate the nitriding mechanism and kinetics by proposing a new methodology that is coupled with the mass balance analysis and the optical microscope image processing analysis. A new quantitative analysis methodology is described in chapter 2 and the investigation of the nitriding kinetics is performed in chapter 3. The experimental details are previously reported in. Previously only qualitative analysis was performed in, and hence the quantitative analysis will be performed in this paper. In this paper, the nitriding kinetics and mechanism were quantitatively analyzed by the new proposed analysis methods: the mass balance analysis and the optical microscope image processing analysis. Using these combined methods, the mass gain curves and the optical microscopes are analyzed in very detail, and the mechanisms of nitriding accelerated, stabilized and saturated behaviors were well understood. This paper has two very distinctive achievements as follows: 1) Development of very effective quantitative analysis methods only using two main results of oxidation tests: No detailed analytical sample measurements (e.g. TEM, EPMA and so on.) were required. These methods can effectively reduce the cost and effort of the post-test investigation. 2) The first identification of the nitriding behaviors and its very accurate analysis in a quantitative way. Based on this quantitative analysis results on the nitriding kinetics, these new findings will contribute significantly the understanding the air oxidation behaviors and model

Nanostructured and nanolayer coatings based on nitrides of the metals structure study and structure and composition standard samples set development

Directory of Open Access Journals (Sweden)

E. B. Chabina

2014-01-01

Full Text Available Researches by methods of analytical microscopy and the x-ray analysis have allowed to develop a set of standard samples of composition and structure of the strengthening nanostructured and nanolayer coatings for control of the strengthening nanostructured and nanolayer coatings based on nitrides of the metals used to protect critical parts of the compressor of the gas turbine engine from dust erosion, corrosion and oxidation.

Thermally conductive, dielectric PCM-boron nitride nanosheet composites for efficient electronic system thermal management.

Science.gov (United States)

Yang, Zhi; Zhou, Lihui; Luo, Wei; Wan, Jiayu; Dai, Jiaqi; Han, Xiaogang; Fu, Kun; Henderson, Doug; Yang, Bao; Hu, Liangbing

2016-11-24

Phase change materials (PCMs) possessing ideal properties, such as superior mass specific heat of fusion, low cost, light weight, excellent thermal stability as well as isothermal phase change behavior, have drawn considerable attention for thermal management systems. Currently, the low thermal conductivity of PCMs (usually less than 1 W mK -1 ) greatly limits their heat dissipation performance in thermal management applications. Hexagonal boron nitride (h-BN) is a two-dimensional material known for its excellent thermally conductive and electrically insulating properties, which make it a promising candidate to be used in electronic systems for thermal management. In this work, a composite, consisting of h-BN nanosheets (BNNSs) and commercialized paraffin wax was developed, which inherits high thermally conductive and electrically insulating properties from BNNSs and substantial heat of fusion from paraffin wax. With the help of BNNSs, the thermal conductivity of wax-BNNS composites reaches 3.47 W mK -1 , which exhibits a 12-time enhancement compared to that of pristine wax (0.29 W mK -1 ). Moreover, an 11.3-13.3 MV m -1 breakdown voltage of wax-BNNS composites was achieved, which shows further improved electrical insulating properties. Simultaneously enhanced thermally conductive and electrically insulating properties of wax-BNNS composites demonstrate their promising application for thermal management in electronic systems.

Optical Absorption and Emission Mechanisms of Single Defects in Hexagonal Boron Nitride

Science.gov (United States)

Jungwirth, Nicholas R.; Fuchs, Gregory D.

2017-08-01

We investigate the polarization selection rules of sharp zero-phonon lines (ZPLs) from isolated defects in hexagonal boron nitride (HBN) and compare our findings with the predictions of a Huang-Rhys model involving two electronic states. Our survey, which spans the spectral range ˜550 - 740 nm , reveals that, in disagreement with a two-level model, the absorption and emission dipoles are often misaligned. We relate the dipole misalignment angle (Δ θ ) of a ZPL to its energy shift from the excitation energy (Δ E ) and find that Δ θ ≈0 ° when Δ E corresponds to an allowed HBN phonon frequency and that 0 ° ≤Δ θ ≤90 ° when Δ E exceeds the maximum allowed HBN phonon frequency. Consequently, a two-level Huang-Rhys model succeeds at describing excitations mediated by the creation of one optical phonon but fails at describing excitations that require the creation of multiple phonons. We propose that direct excitations requiring the creation of multiple phonons are inefficient due to the low Huang-Rhys factors in HBN and that these ZPLs are instead excited indirectly via an intermediate electronic state. This hypothesis is corroborated by polarization measurements of an individual ZPL excited with two distinct wavelengths that indicate a single ZPL may be excited by multiple mechanisms. These findings provide new insight on the nature of the optical cycle of novel defect-based single-photon sources in HBN.

Quantitative Auger depth profiling of LPCVD and PECVD silicon nitride films

International Nuclear Information System (INIS)

Keim, E.G.; Aite, K.

1989-01-01

Thin silicon nitride films (100-210 nm) with refractive indices varying from 1.90 to 2.10 were deposited on silicon substrates by low pressure chemical vapour deposition (LPCVD) and plasma enhanced chemical vapour deposition (PECVD). Rutherford backscattering spectrometry (RBS), ellipsometry, surface profiling measurements and Auger electron spectroscopy (AES) in combination with Ar + sputtering were used to characterize these films. We have found that the use of (p-p)heights of the Si LVV and N KLL Auger transitions in the first derivative of the energy distribution (dN(E)/dE) leads to an accurate determination of the silicon nitride composition in Auger depth profiles over a wide range of atomic Si/N ratios. Moreover, we have shown that the Si KLL Auger transition, generally considered to be a better probe than the low energy Si LVV Auger transition in determining the chemical composition of silicon nitride layers, leads to deviating results. (orig.)

Control of emitted light polarization in a 1310 nm dilute nitride spin-vertical cavity surface emitting laser subject to circularly polarized optical injection

Energy Technology Data Exchange (ETDEWEB)

Alharthi, S. S., E-mail: ssmalh@essex.ac.uk; Hurtado, A.; Al Seyab, R. K.; Henning, I. D.; Adams, M. J. [School of Computer Science and Electronic Engineering, University of Essex, Wivenhoe Park, Colchester CO4 3SQ (United Kingdom); Korpijarvi, V.-M.; Guina, M. [Optoelectronics Research Centre (ORC), Tampere University of Technology, P.O. Box 692, FIN-33101 Tampere (Finland)

2014-11-03

We experimentally demonstrate the control of the light polarization emitted by a 1310 nm dilute nitride spin-Vertical Cavity Surface Emitting Laser (VCSEL) at room temperature. This is achieved by means of a combination of polarized optical pumping and polarized optical injection. Without external injection, the polarization of the optical pump controls that of the spin-VCSEL. However, the addition of the externally injected signal polarized with either left- (LCP) or right-circular polarization (RCP) is able to control the polarization of the spin-VCSEL switching it at will to left- or right-circular polarization. A numerical model has been developed showing a very high degree of agreement with the experimental findings.

Thermal conductivity of bulk boron nitride nanotube sheets and their epoxy-impregnated composites

International Nuclear Information System (INIS)

Jakubinek, Michael B.; Kim, Keun Su; Simard, Benoit; Niven, John F.; Johnson, Michel B.; Ashrafi, Behnam; White, Mary Anne

2016-01-01

The thermal conductivity of bulk, self-supporting boron nitride nanotube (BNNT) sheets composed of nominally 100% BNNTs oriented randomly in-plane was measured by a steady-state, parallel thermal conductance method. The sheets were either collected directly during synthesis or produced by dispersion and filtration. Differences between the effective thermal conductivities of filtration-produced BNNT buckypaper (∝1.5 W m -1 K -1 ) and lower-density as-synthesized sheets (∝0.75 W m -1 K -1 ), which are both porous materials, were primarily due to their density. The measured results indicate similar thermal conductivity, in the range of 7-12 W m -1 K -1 , for the BNNT network in these sheets. High BNNT-content composites (∝30 wt.% BNNTs) produced by epoxy impregnation of the porous BNNT network gave 2-3 W m -1 K -1 , more than 10 x the baseline epoxy. The combination of manufacturability, thermal conductivity, and electrical insulation offers exciting potential for electrically insulating, thermally conductive coatings and packaging. Thermal conductivity of free-standing BNNT buckypaper, buckypaper composites, and related materials at room temperature. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Preparation and properties of bisphenol-F based boron-phenolic resin/modified silicon nitride composites and their usage as binders for grinding wheels

International Nuclear Information System (INIS)

Lin, Chun-Te; Lee, Hsun-Tsing; Chen, Jem-Kun

2015-01-01

Highlights: • Bisphenol-F based boron-phenolic resins (B-BPF) with B−O bonds were synthesized. • The modified silicon nitride (m-SiN) was well dispersed and adhered in the B-BPF. • B-BPF/m-SiN composites have good thermal resistance and mechanical properties. • The grinding wheels bound by B-BPF/m-SiN have excellent grinding quality. - Abstract: In this study, phenolic resins based on bisphenol-F (BPF) were synthesized. Besides, ammonium borate was added in the synthesis process of BPF to form the bisphenol-F based boron-phenolic resins (B-BPF). The glass transition temperature, thermal resistance, flexural strength and hardness of B-BPF are respectively higher than those of BPF. This is due to the presence of new cross-link B−O bonds in the B-BPF. In addition, the 3-aminopropyltriethoxysilane modified silicon nitride powders (m-SiN) were fully mixed with B-BPF to form the B-BPF/m-SiN composites. The thermal resistance and mechanical properties of the B-BPF/m-SiN are promoted by the well-dispersed and well-adhered m-SiN in these novel polymer/ceramics composites. The results of grinding experiments indicate that the grinding wheels bound by the B-BPF/m-SiN have better grinding quality than those bound by the BPF. Thus the B-BPF/m-SiN composites are better binding media than the BPF resins

The effect of surface nanocrystallization on plasma nitriding behaviour of AISI 4140 steel

International Nuclear Information System (INIS)

Li Yang; Wang Liang; Zhang Dandan; Shen Lie

2010-01-01

A plastic deformation surface layer with nanocrystalline grains was produced on AISI 4140 steel by means of surface mechanical attrition treatment (SMAT). Plasma nitriding of SMAT and un-SMAT AISI 4140 steel was carried out by a low-frequency pulse excited plasma unit. A series of nitriding experiments has been conducted at temperatures ranging from 380 to 500 deg. C for 8 h in an NH 3 gas. The samples were characterized using X-ray diffraction, scanning electron microscopy, optical microscopy and Vickers microhardness tester. The results showed that a much thicker compound layer with higher hardness was obtained for the SMAT samples when compared with un-SMAT samples after nitriding at the low temperature. In particular, plasma nitriding SMAT AISI 4140 steel at 380 deg. C for 8 h can produced a compound layer of 2.5 μm thickness with very high hardness on the surface, which is similar to un-SMAT samples were plasma nitrided at approximately 430 deg. C within the same time.

The effect of surface nanocrystallization on plasma nitriding behaviour of AISI 4140 steel

Science.gov (United States)

Li, Yang; Wang, Liang; Zhang, Dandan; Shen, Lie

2010-11-01

A plastic deformation surface layer with nanocrystalline grains was produced on AISI 4140 steel by means of surface mechanical attrition treatment (SMAT). Plasma nitriding of SMAT and un-SMAT AISI 4140 steel was carried out by a low-frequency pulse excited plasma unit. A series of nitriding experiments has been conducted at temperatures ranging from 380 to 500 °C for 8 h in an NH 3 gas. The samples were characterized using X-ray diffraction, scanning electron microscopy, optical microscopy and Vickers microhardness tester. The results showed that a much thicker compound layer with higher hardness was obtained for the SMAT samples when compared with un-SMAT samples after nitriding at the low temperature. In particular, plasma nitriding SMAT AISI 4140 steel at 380 °C for 8 h can produced a compound layer of 2.5 μm thickness with very high hardness on the surface, which is similar to un-SMAT samples were plasma nitrided at approximately 430 °C within the same time.

Optical and structural properties of SiOxNyHz films deposited by electron cyclotron resonance and their correlation with composition

International Nuclear Information System (INIS)

Prado, A. del; San Andres, E.; Martil, I.; Gonzalez-Diaz, G.; Bravo, D.; Lopez, F. J.; Bohne, W.; Roehrich, J.; Selle, B.; Martinez, F. L.

2003-01-01

SiO x N y H z films were deposited from O 2 , N 2 , and SiH 4 gas mixtures at room temperature using the electron cyclotron resonance plasma method. The absolute concentrations of all the species present in the films (Si, O, N, and H) were measured with high precision by heavy-ion elastic recoil detection analysis. The composition of the films was controlled over the whole composition range by adjusting the precursor gases flow ratio during deposition. The relative incorporation of O and N is determined by the ratio Q=φ(O 2 )/φ(SiH 4 ) and the relative content of Si is determined by R=[φ(O 2 )+φ(N 2 )]/φ(SiH 4 ) where φ(SiH 4 ), φ(O 2 ), and φ(N 2 ) are the SiH 4 , O 2 , and N 2 gas flows, respectively. The optical properties (infrared absorption and refractive index) and the density of paramagnetic defects were analyzed in dependence on the film composition. Single-phase homogeneous films were obtained at low SiH 4 partial pressure during deposition; while those samples deposited at high SiH 4 partial pressure show evidence of separation of two phases. The refractive index was controlled over the whole range between silicon nitride and silicon oxide, with values slightly lower than in stoichiometric films due to the incorporation of H, which results in a lower density of the films. The most important paramagnetic defects detected in the films were the K center and the E ' center. Defects related to N were also detected in some samples. The total density of defects in SiO x N y H z films was higher than in SiO 2 and lower than in silicon nitride films

Low-temperature direct synthesis of mesoporous vanadium nitrides for electrochemical capacitors

Energy Technology Data Exchange (ETDEWEB)

Lee, Hae-Min [Institute of NT-IT Fusion Technology, Ajou University, 206 Worldcup-ro, Yeongtong-gu, Suwon 16499 (Korea, Republic of); Jeong, Gyoung Hwa [Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Banyeon 100, Ulsan 44919 (Korea, Republic of); Kim, Sang-Wook [Department of Molecular Science and Technology, Ajou University, 206 Worldcup-ro, Yeongtong-gu, Suwon 16499 (Korea, Republic of); Kim, Chang-Koo, E-mail: changkoo@ajou.ac.kr [Department of Chemical Engineering and Department of Energy Systems Research, Ajou University, 206 Worldcup-ro, Yeongtong-gu, Suwon 16499 (Korea, Republic of)

2017-04-01

Highlights: • Vanadium nitrides were directly synthesized by a one-step chemical precipitation method. • This method was carried out at a low temperature of 70 °C. • Vanadium nitrides had a specific capacitance of 598 F/g. • The equivalent series resistance of the vanadium nitride electrode was 1.42 Ω after 5000 cycles. - Abstract: Mesoporous vanadium nitrides are directly synthesized by a one-step chemical precipitation method at a low temperature (70 °C). Structural and morphological analyses reveal that vanadium nitride consist of long and slender nanowhiskers, and mesopores with diameters of 2–5 nm. Compositional analysis confirms the presence of vanadium in the VN structure, along with oxidized vanadium. The cyclic voltammetry and charge-discharge tests indicate that the obtained material stores charges via a combination of electric double-layer capacitance and pseudocapacitance mechanisms. The vanadium nitride electrode exhibits a specific capacitance of 598 F/g at a current density of 4 A/g. After 5000 charge-discharge cycles, the electrode has an equivalent series resistance of 1.42 Ω and retains 83% of its initial specific capacitance. This direct low-temperature synthesis of mesoporous vanadium nitrides is a simple and promising method to achieve high specific capacitance and low equivalent series resistance for electrochemical capacitor applications.

Computational and experimental study of copper–gold nitride formation

Energy Technology Data Exchange (ETDEWEB)

Ponce-Cázares, I., E-mail: iponce@cnyn.unam.mx [Centro de Investigación Científica y de Educación Superior de Ensenada (CICESE), Carretera Tijuana-Ensenada No. 3918, A. Postal 360, 22860 Ensenada, B.C. (Mexico); Soto, G., E-mail: gerardo@cnyn.unam.mx [Universidad Nacional Autónoma de México, Centro de Nanociencias y Nanotecnología, Km. 107 Carretera Tijuana-Ensenada, C.P. 22860 Ensenada, B.C. (Mexico); Moreno-Armenta, Ma. Guadalupe, E-mail: moreno@cnyn.unam.mx [Universidad Nacional Autónoma de México, Centro de Nanociencias y Nanotecnología, Km. 107 Carretera Tijuana-Ensenada, C.P. 22860 Ensenada, B.C. (Mexico); De la Cruz, W., E-mail: wencel@cnyn.unam.mx [Universidad Nacional Autónoma de México, Centro de Nanociencias y Nanotecnología, Km. 107 Carretera Tijuana-Ensenada, C.P. 22860 Ensenada, B.C. (Mexico)

2015-08-25

Highlights: • The new Cu{sub 3}Au-nitride compound was successfully grown by the sputtering method. • This material is Cu{sub 3}Au{sub 0.5}N with cubic system (Pm3m space group), where the gold randomly occupies half of the 1a Wyckoff sites. • The material was a pseudo-gap conductor with conductance as good as a heavily-doped semiconductor at room temperature. - Abstract: This work investigates the formation of a Cu{sub 3}Au-nitride alloy using experimental and computational methods. For this purpose, we prepared a custom-made Cu–Au target and then hit it with argon ions in the presence of molecular nitrogen that produced a film on Corning glass. This film was analyzed using spectroscopic and diffraction techniques. The four-point-probe method and Tauc plots were applied to determine the electrical and optical properties of this thin film. Using first principle calculations a structural model was constructed that validated our observations. The crystalline system that we used was cubic (Pm3m space group) with half the sites filled with Au randomly. The composition was close to Cu{sub 3}Au{sub 0.5}N. In agreement with the electrical measurements and calculations, the Cu{sub 3}Au{sub 0.5}N band structure was highly affected by the Au incorporation since the electrical resistance and carrier density were in the 10{sup −3} Ω cm and 10{sup 22} cm{sup −3} ranges, respectively, and the optical gap decreased 0.61 eV with respect to the Cu{sub 3}N. The material was a pseudo-gap conductor with conductance as good as a heavily-doped semiconductor at room temperature; this should give it great potential for use in the optoelectronics industry.

Computational and experimental study of copper–gold nitride formation

International Nuclear Information System (INIS)

Ponce-Cázares, I.; Soto, G.; Moreno-Armenta, Ma. Guadalupe; De la Cruz, W.

2015-01-01

Highlights: • The new Cu 3 Au-nitride compound was successfully grown by the sputtering method. • This material is Cu 3 Au 0.5 N with cubic system (Pm3m space group), where the gold randomly occupies half of the 1a Wyckoff sites. • The material was a pseudo-gap conductor with conductance as good as a heavily-doped semiconductor at room temperature. - Abstract: This work investigates the formation of a Cu 3 Au-nitride alloy using experimental and computational methods. For this purpose, we prepared a custom-made Cu–Au target and then hit it with argon ions in the presence of molecular nitrogen that produced a film on Corning glass. This film was analyzed using spectroscopic and diffraction techniques. The four-point-probe method and Tauc plots were applied to determine the electrical and optical properties of this thin film. Using first principle calculations a structural model was constructed that validated our observations. The crystalline system that we used was cubic (Pm3m space group) with half the sites filled with Au randomly. The composition was close to Cu 3 Au 0.5 N. In agreement with the electrical measurements and calculations, the Cu 3 Au 0.5 N band structure was highly affected by the Au incorporation since the electrical resistance and carrier density were in the 10 −3 Ω cm and 10 22 cm −3 ranges, respectively, and the optical gap decreased 0.61 eV with respect to the Cu 3 N. The material was a pseudo-gap conductor with conductance as good as a heavily-doped semiconductor at room temperature; this should give it great potential for use in the optoelectronics industry

Discrete Charge Storage Nonvolatile Memory Based on Si Nanocrystals with Nitridation Treatment

International Nuclear Information System (INIS)

Xian-Gao, Zhang; Kun-Ji, Chen; Zhong-Hui, Fang; Xin-Ye, Qian; Guang-Yuan, Liu; Xiao-Fan, Jiang; Zhong-Yuan, Ma; Jun, Xu; Xin-Fan, Huang; Jian-Xin, Ji; Fei, He; Kuang-Bao, Song; Jun, Zhang; Hui, Wan; Rong-Hua, Wang

2010-01-01

A nonvolatile memory device with nitrided Si nanocrystals embedded in a Boating gate was fabricated. The uniform Si nanocrystals with high density (3 × 10 11 cm −2 ) were deposited on ultra-thin tunnel oxide layer (∼ 3 nm) and followed by a nitridation treatment in ammonia to form a thin silicon nitride layer on the surface of nanocrystals. A memory window of 2.4 V was obtained and it would be larger than 1.3 V after ten years from the extrapolated retention data. The results can be explained by the nitrogen passivation of the surface traps of Si nanocrystals, which slows the charge loss rate. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Radiofrequency cold plasma nitrided carbon steel: Microstructural and micromechanical characterizations

International Nuclear Information System (INIS)

Bouanis, F.Z.; Bentiss, F.; Bellayer, S.; Vogt, J.B.; Jama, C.

2011-01-01

Highlights: → C38 carbon steel samples were plasma nitrided using a radiofrequency (rf) nitrogen plasma discharge. → RF plasma treatment enables nitriding for non-heated substrates. → The morphological and chemical analyses show the formation of a uniform thickness on the surface of the nitrided C38 steel. → Nitrogen plasma active species diffuse into the samples and lead to the formation of Fe x N. → The increase in microhardness values for nitrided samples with plasma processing time is interpreted by the formation of a thicker nitrided layer on the steel surface. - Abstract: In this work, C38 carbon steel was plasma nitrided using a radiofrequency (rf) nitrogen plasma discharge on non-heated substrates. General characterizations were performed to compare the chemical compositions, the microstructures and hardness of the untreated and plasma treated surfaces. The plasma nitriding was carried out on non-heated substrates at a pressure of 16.8 Pa, using N 2 gas. Surface characterizations before and after N 2 plasma treatment were performed by means of the electron probe microanalysis (EPMA), X-ray photoelectron spectroscopy (XPS) and Vickers microhardness measurements. The morphological and chemical analysis showed the formation of a uniform structure on the surface of the nitrided sample with enrichment in nitrogen when compared to untreated sample. The thickness of the nitride layer formed depends on the treatment time duration and is approximately 14 μm for 10 h of plasma treatment. XPS was employed to obtain chemical-state information of the plasma nitrided steel surfaces. The micromechanical results show that the surface microhardness increases as the plasma-processing time increases to reach, 1487 HV 0.005 at a plasma processing time of 8 h.

Radiofrequency cold plasma nitrided carbon steel: Microstructural and micromechanical characterizations

Energy Technology Data Exchange (ETDEWEB)

Bouanis, F.Z. [Universite Lille Nord de France, F-59000 Lille (France); Unite Materiaux et Transformations (UMET), Ingenierie des Systemes Polymeres, CNRS UMR 8207, ENSCL, BP 90108, F-59652 Villeneuve d' Ascq Cedex (France); Bentiss, F. [Laboratoire de Chimie de Coordination et d' Analytique, Faculte des Sciences, Universite Chouaib Doukkali, B.P. 20, M-24000 El Jadida (Morocco); Bellayer, S.; Vogt, J.B. [Universite Lille Nord de France, F-59000 Lille (France); Unite Materiaux et Transformations (UMET), Ingenierie des Systemes Polymeres, CNRS UMR 8207, ENSCL, BP 90108, F-59652 Villeneuve d' Ascq Cedex (France); Jama, C., E-mail: charafeddine.jama@ensc-lille.fr [Universite Lille Nord de France, F-59000 Lille (France); Unite Materiaux et Transformations (UMET), Ingenierie des Systemes Polymeres, CNRS UMR 8207, ENSCL, BP 90108, F-59652 Villeneuve d' Ascq Cedex (France)

2011-05-16

Highlights: {yields} C38 carbon steel samples were plasma nitrided using a radiofrequency (rf) nitrogen plasma discharge. {yields} RF plasma treatment enables nitriding for non-heated substrates. {yields} The morphological and chemical analyses show the formation of a uniform thickness on the surface of the nitrided C38 steel. {yields} Nitrogen plasma active species diffuse into the samples and lead to the formation of Fe{sub x}N. {yields} The increase in microhardness values for nitrided samples with plasma processing time is interpreted by the formation of a thicker nitrided layer on the steel surface. - Abstract: In this work, C38 carbon steel was plasma nitrided using a radiofrequency (rf) nitrogen plasma discharge on non-heated substrates. General characterizations were performed to compare the chemical compositions, the microstructures and hardness of the untreated and plasma treated surfaces. The plasma nitriding was carried out on non-heated substrates at a pressure of 16.8 Pa, using N{sub 2} gas. Surface characterizations before and after N{sub 2} plasma treatment were performed by means of the electron probe microanalysis (EPMA), X-ray photoelectron spectroscopy (XPS) and Vickers microhardness measurements. The morphological and chemical analysis showed the formation of a uniform structure on the surface of the nitrided sample with enrichment in nitrogen when compared to untreated sample. The thickness of the nitride layer formed depends on the treatment time duration and is approximately 14 {mu}m for 10 h of plasma treatment. XPS was employed to obtain chemical-state information of the plasma nitrided steel surfaces. The micromechanical results show that the surface microhardness increases as the plasma-processing time increases to reach, 1487 HV{sub 0.005} at a plasma processing time of 8 h.

Ultra-compact silicon nitride grating coupler for microscopy systems

OpenAIRE

Zhu, Yunpeng; Wang, Jie; Xie, Weiqiang; Tian, Bin; Li, Yanlu; Brainis, Edouard; Jiao, Yuqing; Van Thourhout, Dries

2017-01-01

Grating couplers have been widely used for coupling light between photonic chips and optical fibers. For various quantum-optics and bio-optics experiments, on the other hand, there is a need to achieve good light coupling between photonic chips and microscopy systems. Here, we propose an ultra-compact silicon nitride (SiN) grating coupler optimized for coupling light from a waveguide to a microscopy system. The grating coupler is about 4 by 2 mu m(2) in size and a 116 nm 1 dB bandwidth can be...

Nanometric resolution in glow discharge optical emission spectroscopy and Rutherford backscattering spectrometry depth profiling of metal (Cr, Al) nitride multilayers

International Nuclear Information System (INIS)

Escobar Galindo, R.; Gago, R.; Fornies, E.; Munoz-Martin, A.; Climent Font, A.; Albella, J.M.

2006-01-01

In this work, we address the capability of glow discharge optical emission spectroscopy (GDOES) for fast and accurate depth profiling of multilayer nitride coatings down to the nanometer range. This is shown by resolving the particular case of CrN/AlN structures with individual thickness ranging from hundreds to few nanometers. In order to discriminate and identify artefacts in the GDOES depth profile due to the sputtering process, the layered structures were verified by Rutherford backscattering spectrometry (RBS) and scanning electron microscopy (SEM). The interfaces in the GDOES profiles for CrN/AlN structures are sharper than the ones measured for similar metal multilayers due to the lower sputtering rate of the nitrides. However, as a consequence of the crater shape, there is a linear degradation of the depth resolution with depth (approximately 40 nm/μm), saturating at a value of approximately half the thickness of the thinner layer. This limit is imposed by the simultaneous sputtering of consecutive layers. The ultimate GDOES depth resolution at the near surface region was estimated to be of 4-6 nm

Thermoconductive Thermosetting Composites Based on Boron Nitride Fillers and Thiol-Epoxy Matrices

Directory of Open Access Journals (Sweden)

Isaac Isarn

2018-03-01

Full Text Available In this work, the effect of the addition of boron nitride (BN fillers in a thiol-cycloaliphatic epoxy formulation has been investigated. Calorimetric studies put into evidence that the kinetics of the curing has been scarcely affected and that the addition of particles does not affect the final structure of the network. Rheologic studies have shown the increase in the viscoelastic properties on adding the filler and allow the percolation threshold to be calculated, which was found to be 35.5%. The use of BN agglomerates of bigger size increases notably the viscosity of the formulation. Glass transition temperatures are not affected by the filler added, but Young’s modulus and hardness have been notably enhanced. Thermal conductivity of the composites prepared shows a linear increase with the proportion of BN particle sheets added, reaching a maximum of 0.97 W/K·m. The addition of 80 μm agglomerates, allowed to increase this value until 1.75 W/K·m.

Single-layer ZnMN2 (M = Si, Ge, Sn) zinc nitrides as promising photocatalysts.

Science.gov (United States)

Bai, Yujie; Luo, Gaixia; Meng, Lijuan; Zhang, Qinfang; Xu, Ning; Zhang, Haiyang; Wu, Xiuqiang; Kong, Fanjie; Wang, Baolin

2018-05-30

Searching for two-dimensional semiconductor materials that are suitable for visible-light photocatalytic water splitting provides a sustainable solution to deal with the future energy crisis and environmental problems. Herein, based on first-principles calculations, single-layer ZnMN2 (M = Si, Ge, Sn) zinc nitrides are proposed as efficient photocatalysts for water splitting. Stability analyses show that the single-layer ZnMN2 zinc nitrides exhibit energetic and dynamical stability. The electronic properties reveal that all of the single-layer ZnMN2 zinc nitrides are semiconductors. Interestingly, single-layer ZnSnN2 is a direct band gap semiconductor with a desirable band gap (1.74 eV), and the optical adsorption spectrum confirms its optical absorption in the visible light region. The hydrogen evolution reaction (HER) calculations show that the catalytic activity for single-layer ZnMN2 (M = Ge, Sn) is better than that of single-layer ZnSiN2. Furthermore, the band gaps and band edge positions for the single-layer ZnMN2 zinc nitrides can be effectively tuned by biaxial strain. Especially, single-layer ZnGeN2 can be effectively tuned to match better with the redox potentials of water and enhance the light absorption in the visible light region at a tensile strain of 5%, which is confirmed by the corresponding optical absorption spectrum. Our results provide guidance for experimental synthesis efforts and future searches for single-layer materials suitable for photocatalytic water splitting.

Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride

Energy Technology Data Exchange (ETDEWEB)

Korolev, D. S.; Mikhaylov, A. N.; Belov, A. I.; Vasiliev, V. K.; Guseinov, D. V.; Okulich, E. V. [Nizhny Novgorod State University (Russian Federation); Shemukhin, A. A. [Moscow State University, Skobeltsyn Institute of Nuclear Physics (Russian Federation); Surodin, S. I.; Nikolitchev, D. E.; Nezhdanov, A. V.; Pirogov, A. V.; Pavlov, D. A.; Tetelbaum, D. I., E-mail: tetelbaum@phys.unn.ru [Nizhny Novgorod State University (Russian Federation)

2016-02-15

The composition and structure of silicon surface layers subjected to combined gallium and nitrogen ion implantation with subsequent annealing have been studied by the X-ray photoelectron spectroscopy, Rutherford backscattering, electron spin resonance, Raman spectroscopy, and transmission electron microscopy techniques. A slight redistribution of the implanted atoms before annealing and their substantial migration towards the surface during annealing depending on the sequence of implantations are observed. It is found that about 2% of atoms of the implanted layer are replaced with gallium bonded to nitrogen; however, it is impossible to detect the gallium-nitride phase. At the same time, gallium-enriched inclusions containing ∼25 at % of gallium are detected as candidates for the further synthesis of gallium-nitride inclusions.

Electronic structure calculations on nitride semiconductors and their alloys

International Nuclear Information System (INIS)

Dugdale, D.

2000-09-01

Calculations of the electronic properties of AIN, GaN, InN and their alloys are presented. Initial calculations are performed using the first principles pseudopotential method to obtain accurate lattice constants. Further calculations then investigate bonding in the nitrides through population analysis and density of state calculations. The empirical pseudopotential method is also used in this work. Pseudopotentials for each of the nitrides are constructed using a functional form that allows strained material and alloys to be studied. The conventional k.p valence band parameters for both zincblende and wurtzite are obtained from the empirical band structure using two different methods. A Monte-Carlo fitting of the k.p band structure to the pseudopotential data (or an effective mass method for the zincblende structure) is used to produce one set. Another set is obtained directly from the momentum matrix elements and energy eigenvalues at the centre of the Brillouin zone. Both methods of calculating k.p parameters produce band structure in excellent agreement with the original empirical band calculations near the centre of the Brillouin zone. The advantage of the direct method is that it produces consistent sets of parameters, and can be used in studies involving a series of alloy compositions. Further empirical pseudopotential method calculations are then performed for alloys of the nitrides. In particular, the variation of the band gap with alloy composition is investigated, and good agreement with theory and experiment is found. The direct method is used to obtain k.p parameters for the alloys, and is contrasted with the fitting approach. The behaviour of the nitrides under strain is also studied. In particular. valence band offsets for nitride heterojunctions are calculated, and a strong forward- backward asymmetry in the band offset is found, in good agreement with other results in the literature. (author)

Plasma nitriding of steels

CERN Document Server

Aghajani, Hossein

2017-01-01

This book focuses on the effect of plasma nitriding on the properties of steels. Parameters of different grades of steels are considered, such as structural and constructional steels, stainless steels and tools steels. The reader will find within the text an introduction to nitriding treatment, the basis of plasma and its roll in nitriding. The authors also address the advantages and disadvantages of plasma nitriding in comparison with other nitriding methods. .

Phonon and free-charge carrier properties in group-III nitride heterostructures investigated by spectroscopic ellipsometry and optical Hall effect

Science.gov (United States)

Schoeche, Stefan

The material class of group-III nitrides gained tremendous technological importance for optoelectronic and high-power/high-frequency amplification devices. Tunability of the direct band gap from 0.65 eV (InN) to 6.2 eV (AlN) by alloying, high breakthrough voltages and intrinsic mobilities, as well as the formation of highly mobile 2d electron gases (2DEG) at heterointerfaces make these compounds ideal for many applications. GaN and Ga-rich alloys are well studied and current research is mainly device-oriented. For example, choice and quality of the gate dielectric significantly influence device performance in high-electron mobility transistors (HEMT) which utilize highly mobile 2DEGs at heterointerfaces. Experimental access to the 2DEG channel properties without influence from parasitic currents or contact properties are desirable. In- and Al-rich ternary alloys are less explored than Ga-rich compounds. For InN and In-rich alloys, while many material parameters such as stiffness constants or effective mass values are largely unknown, reliable p-type doping is a major challenge, also because p-type conducting channels are buried within highly conductive n-type material formed at the surface and interfaces preventing electrical characterization. For AlN and high-Al content alloys, doping mechanisms are not understood and reliable fabrication of material with high free-charge carrier (FCC) concentrations was achieved just recently. Difficulties to form ohmic contacts impair electrical measurements and optical characterization is impeded by lack of high-energy excitation sources. In this work, spectroscopic ellipsometry over the wide spectral range from the THz to VUV in combination with optical Hall effect (generalized ellipsometry with applied magnetic field) from THz to MIR are applied in order to investigate the phonon modes and FCC properties in group-III nitride heterostructures. Adequate model descriptions and analysis strategies are introduced which allow

The atomic and electronic structure of amorphous silicon nitride

International Nuclear Information System (INIS)

Alvarez, F.; Valladares, A.A.

2002-01-01

Using a novel approach to the ab initio generation of random networks we constructed two nearly stoichiometric samples of amorphous silicon nitride with the same content x= 1.29. The two 64-atom periodically-continued cubic diamond-like cells contain 28 silicons and 36 nitrogens randomly substituted, and were amorphized with a 6 f s time step by heating them to just below their melting temperature with a Harris-functional based, molecular dynamics code in the LDA approximation. The averaged total radial distribution function (RDF) obtained is compared with some existing Tersoff-like potential simulations and with experiment; ours agree with experiment. All the partial radial features are calculated and the composition of the second peak also agrees with experiment. The electronic structure is calculated and the optical gaps obtained using both a HOMO-LUMO approach and the Tauc-like procedure developed recently that gives reasonable gaps. (Author)

Hydrotreatment activities of supported molybdenum nitrides and carbides

Energy Technology Data Exchange (ETDEWEB)

Dolce, G.M.; Savage, P.E.; Thompson, L.T. [University of Michigan, Ann Arbor, MI (United States). Dept. of Chemical Engineering

1997-05-01

The growing need for alternative sources of transportation fuels encourages the development of new hydrotreatment catalysts. These catalysts must be active and more hydrogen efficient than the current commercial hydrotreatment catalysts. Molybdenum nitrides and carbides are attractive candidate materials possessing properties that are comparable or superior to those of commercial sulfide catalysts. This research investigated the catalytic properties of {gamma}-Al{sub 2}O{sub 3}-supported molybdenum nitrides and carbides. These catalysts were synthesized via temperature-programmed reaction of supported molybdenum oxides with ammonia or methane/hydrogen mixtures. Phase constituents and compositions were determined by X-ray diffraction, elemental analysis, and neutral activation analysis. Oxygen chemisorption was used to probe the surface properties of the catalysts. Specific activities of the molybdenum nitrides and carbides were competitive with those of a commercial sulfide catalyst for hydrodenitrogenation (HDN), hydrodesulfurization (HDS), and hydrodeoxygenation (HDO). For HDN and HDS, the catalytic activity on a molybdenum basis was a strong inverse function of the molybdenum loading. Product distributions of the HDN, HDO and HDS of a variety of heteroatom compounds indicated that several of the nitrides and carbides were more hydrogen efficient than the sulfide catalyst. 35 refs., 8 figs., 7 tabs.

Studies of the composition, tribology and wetting behavior of silicon nitride films formed by pulsed reactive closed-field unbalanced magnetron sputtering

International Nuclear Information System (INIS)

Yao, Zh.Q.; Yang, P.; Huang, N.; Wang, J.; Wen, F.; Leng, Y.X.

2006-01-01

Silicon nitride films were formed by pulsed reactive closed-field unbalanced magnetron sputtering of high purity Si targets in an Ar-N 2 mixture. The effects of N 2 fraction on the chemical composition, and tribological and wetting behaviors were investigated. The films deposited at a high N 2 fraction were consistently N-rich. The surface microstructure changed from continuous granular surrounded by tiny void regions to a homogeneous and dense microstructure, and densitied as the N 2 fraction is increased. The as-deposited films have a relatively low friction coefficient and better wear resistance than 316L stainless steel under dry sliding friction and experienced only abrasive wear. The decreased surface roughness and increased nitrogen incorporation in the film give rise to increased contact angle with double-stilled water from 24 deg. to 49.6 deg. To some extent, the silicon nitride films deposited are hydrophilic in nature

Electrophoretic deposition of hydroxyapatite-hexagonal boron nitride composite coatings on Ti substrate.

Science.gov (United States)

Göncü, Yapıncak; Geçgin, Merve; Bakan, Feray; Ay, Nuran

2017-10-01

In this study, commercial pure titanium samples were coated with nano hydroxyapatite-nano hexagonal boron nitride (nano HA-nano hBN) composite by electrophoretic deposition (EPD). The effect of process parameters (applied voltage, deposition time and solid concentration) on the coating morphology, thickness and the adhesion behavior were studied systematically and crack free nano hBN-nano HA composite coating production was achieved for developing bioactive coatings on titanium substrates for orthopedic applications. For the examination of structural and morphological characteristics of the coating surfaces, various complementary analysis methods were performed. For the structural characterization, XRD and Raman Spectroscopy were used while, Scanning Electron Microscopy (SEM) equipped with an energy dispersive spectrometer (EDS) and Transmission Electron Microscopy (TEM) techniques were carried out for revealing the morphological characterization. The results showed that nano HA-nano hBN were successfully deposited on Ti surface with uniform, crack-free coating by EPD. The amounts of hBN in suspension are considered to have no effect on coating thickness. By adding hBN into HA, the morphology of HA did not change and hBN has no significant effect on porous structure. These nanostructured surfaces are expected to be suitable for proliferation of cells and have high potential for bioactive materials. Copyright © 2017 Elsevier B.V. All rights reserved.

Dielectric and thermal properties of isotactic polypropylene/hexagonal boron nitride composites for high-frequency applications

International Nuclear Information System (INIS)

Takahashi, Susumu; Imai, Yusuke; Kan, Akinori; Hotta, Yuji; Ogawa, Hirotaka

2014-01-01

Highlights: • The degree of orientation of the hBN could be controlled by the fabrication process. • The dielectric constants of composites ranged between 2.25 and 3.39. • The dielectric loss of composites was on the order of 10 −4 for all compositions. • The thermal conductivity were improved by controlling orientation of hBN. - Abstract: Dielectric composites aimed for high frequency applications were prepared by using anisotropic hexagonal boron nitride (hBN) particles as a fillers and isotactic polypropylene (iPP) as polymer matrix. Dielectric and thermal properties of the composites were studied, focusing on the filler orientation in the plate-shape specimens and filler concentration up to 40 vol%. The degree of orientation of the filler was controlled by the composite fabrication process. Hot-pressing gave relatively random orientation of the filler in the matrix, while injection molding induced a high orientation. Dielectric constant (ε r ) of the composites ranged between 2.25 and 3.39. The estimation of ε r based on the Bruggeman mixing model agreed well with the measured value. Low dielectric losses (tan δ) at microwave frequencies, on the order of 10 −4 , were obtained for all the compositions. Through-thickness thermal conductivity (k) of the hot-pressed samples showed a drastic increase with increasing the filler concentration, reaching up to 2.1 W/m K at 40 vol% of hBN. The filler concentration dependence of k was less significant for the injection molded composites. In-plane thermal expansion was almost independent on the filler orientation, while the coefficient of thermal expansion for the thickness direction of the hot-pressed sample was reduced to approximately half of the injection molded counterpart. These differences in thermal conductivity and thermal expansion are thought to arise from the difference in hBN filler orientation

Structurally integrated fiber optic damage assessment system for composite materials.

Science.gov (United States)

Measures, R M; Glossop, N D; Lymer, J; Leblanc, M; West, J; Dubois, S; Tsaw, W; Tennyson, R C

1989-07-01

Progress toward the development of a fiber optic damage assessment system for composite materials is reported. This system, based on the fracture of embedded optical fibers, has been characterized with respect to the orientation and location of the optical fibers in the composite. Together with a special treatment, these parameters have been tailored to yield a system capable of detecting the threshold of damage for various impacted Kevlar/epoxy panels. The technique has been extended to measure the growth of a damage region which could arise from either impact, manufacturing flaws, or static overloading. The mechanism of optical fiber fracture has also been investigated. In addition, the influence of embedded optical fibers on the tensile and compressive strength of the composite material has been studied. Image enhanced backlighting has been shown to be a powerful and convenient method of assessing internal damage to translucent composite materials.

The effect of surface nanocrystallization on plasma nitriding behaviour of AISI 4140 steel

Energy Technology Data Exchange (ETDEWEB)

Li Yang [Department of Materials Science and Engineering, Dalian Maritime University, Institute of Metals and Technology, 1 Linghai Street, Dalian 116026 (China); Wang Liang, E-mail: wlimt@yahoo.com [Department of Materials Science and Engineering, Dalian Maritime University, Institute of Metals and Technology, 1 Linghai Street, Dalian 116026 (China); Zhang Dandan; Shen Lie [Department of Materials Science and Engineering, Dalian Maritime University, Institute of Metals and Technology, 1 Linghai Street, Dalian 116026 (China)

2010-11-15

A plastic deformation surface layer with nanocrystalline grains was produced on AISI 4140 steel by means of surface mechanical attrition treatment (SMAT). Plasma nitriding of SMAT and un-SMAT AISI 4140 steel was carried out by a low-frequency pulse excited plasma unit. A series of nitriding experiments has been conducted at temperatures ranging from 380 to 500 deg. C for 8 h in an NH{sub 3} gas. The samples were characterized using X-ray diffraction, scanning electron microscopy, optical microscopy and Vickers microhardness tester. The results showed that a much thicker compound layer with higher hardness was obtained for the SMAT samples when compared with un-SMAT samples after nitriding at the low temperature. In particular, plasma nitriding SMAT AISI 4140 steel at 380 deg. C for 8 h can produced a compound layer of 2.5 {mu}m thickness with very high hardness on the surface, which is similar to un-SMAT samples were plasma nitrided at approximately 430 deg. C within the same time.

Discovery of earth-abundant nitride semiconductors by computational screening and high-pressure synthesis

Science.gov (United States)

Hinuma, Yoyo; Hatakeyama, Taisuke; Kumagai, Yu; Burton, Lee A.; Sato, Hikaru; Muraba, Yoshinori; Iimura, Soshi; Hiramatsu, Hidenori; Tanaka, Isao; Hosono, Hideo; Oba, Fumiyasu

2016-01-01

Nitride semiconductors are attractive because they can be environmentally benign, comprised of abundant elements and possess favourable electronic properties. However, those currently commercialized are mostly limited to gallium nitride and its alloys, despite the rich composition space of nitrides. Here we report the screening of ternary zinc nitride semiconductors using first-principles calculations of electronic structure, stability and dopability. This approach identifies as-yet-unreported CaZn2N2 that has earth-abundant components, smaller carrier effective masses than gallium nitride and a tunable direct bandgap suited for light emission and harvesting. High-pressure synthesis realizes this phase, verifying the predicted crystal structure and band-edge red photoluminescence. In total, we propose 21 promising systems, including Ca2ZnN2, Ba2ZnN2 and Zn2PN3, which have not been reported as semiconductors previously. Given the variety in bandgaps of the identified compounds, the present study expands the potential suitability of nitride semiconductors for a broader range of electronic, optoelectronic and photovoltaic applications. PMID:27325228

Electro–optical properties of poly(vinyl acetate)/polyindole composite film

International Nuclear Information System (INIS)

Bhagat, D. J.; Dhokane, G. R.; Bajaj, N. S.

2016-01-01

In present work, electrical and optical properties of poly(vinyl acetate)/polyindole (PVAc/PIN) composite film are reported. The prepared composite was characterized via X–ray diffraction (XRD), UV–Vis spectroscopy and DC conductivity measurements. The polymer chain separation was determined using XRD analysis. An attempt has been made to study the temperature dependence of DC conductivity of PVAc/PIN composite in temperature range 308–373 K. The DC conductivity initially increases and reaches to 2.45×10–7 S/cm. The optical band gap value of composite is determined as 4.77 eV. The semiconducting nature of composite observed from electronic as well as optical band gap and Arrhenius behavior of DC plot.

Electro–optical properties of poly(vinyl acetate)/polyindole composite film

Energy Technology Data Exchange (ETDEWEB)

Bhagat, D. J., E-mail: bhagatd@rediffmail.com; Dhokane, G. R. [Arts, Science and Commerce College, Chikhaldara, 444807, Maharashtra (India); Bajaj, N. S. [Toshniwal Arts, Science and Commerce College, Sengaon, Maharashtra (India)

2016-05-06

In present work, electrical and optical properties of poly(vinyl acetate)/polyindole (PVAc/PIN) composite film are reported. The prepared composite was characterized via X–ray diffraction (XRD), UV–Vis spectroscopy and DC conductivity measurements. The polymer chain separation was determined using XRD analysis. An attempt has been made to study the temperature dependence of DC conductivity of PVAc/PIN composite in temperature range 308–373 K. The DC conductivity initially increases and reaches to 2.45×10–7 S/cm. The optical band gap value of composite is determined as 4.77 eV. The semiconducting nature of composite observed from electronic as well as optical band gap and Arrhenius behavior of DC plot.

Thermal conductivity of bulk boron nitride nanotube sheets and their epoxy-impregnated composites

Energy Technology Data Exchange (ETDEWEB)

Jakubinek, Michael B.; Kim, Keun Su; Simard, Benoit [Security and Disruptive Technologies, Division of Emerging Technologies, National Research Council Canada, Ottawa, ON (Canada); Niven, John F. [Department of Physics and Atmospheric Science, Dalhousie University, Halifax, NS (Canada); Johnson, Michel B. [Institute for Research in Materials, Dalhousie University, Halifax, NS (Canada); Ashrafi, Behnam [Aerospace, Division of Engineering, National Research Council Canada, Montreal, QC (Canada); White, Mary Anne [Department of Physics and Atmospheric Science, Dalhousie University, Halifax, NS (Canada); Institute for Research in Materials, Dalhousie University, Halifax, NS (Canada); Department of Chemistry, Dalhousie University, Halifax, NS (Canada)

2016-08-15

The thermal conductivity of bulk, self-supporting boron nitride nanotube (BNNT) sheets composed of nominally 100% BNNTs oriented randomly in-plane was measured by a steady-state, parallel thermal conductance method. The sheets were either collected directly during synthesis or produced by dispersion and filtration. Differences between the effective thermal conductivities of filtration-produced BNNT buckypaper (∝1.5 W m{sup -1} K{sup -1}) and lower-density as-synthesized sheets (∝0.75 W m{sup -1} K{sup -1}), which are both porous materials, were primarily due to their density. The measured results indicate similar thermal conductivity, in the range of 7-12 W m{sup -1} K{sup -1}, for the BNNT network in these sheets. High BNNT-content composites (∝30 wt.% BNNTs) produced by epoxy impregnation of the porous BNNT network gave 2-3 W m{sup -1} K{sup -1}, more than 10 x the baseline epoxy. The combination of manufacturability, thermal conductivity, and electrical insulation offers exciting potential for electrically insulating, thermally conductive coatings and packaging. Thermal conductivity of free-standing BNNT buckypaper, buckypaper composites, and related materials at room temperature. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Molybdenum Nitride Films: Crystal Structures, Synthesis, Mechanical, Electrical and Some Other Properties

Directory of Open Access Journals (Sweden)

Isabelle Jauberteau

2015-10-01

Full Text Available Among transition metal nitrides, molybdenum nitrides have been much less studied even though their mechanical properties as well as their electrical and catalytic properties make them very attractive for many applications. The δ-MoN phase of hexagonal structure is a potential candidate for an ultra-incompressible and hard material and can be compared with c-BN and diamond. The predicted superconducting temperature of the metastable MoN phase of NaCl-B1-type cubic structure is the highest of all refractory carbides and nitrides. The composition of molybdenum nitride films as well as the structures and properties depend on the parameters of the process used to deposit the films. They are also strongly correlated to the electronic structure and chemical bonding. An unusual mixture of metallic, covalent and ionic bonding is found in the stoichiometric compounds.

Characterization of multilayer nitride coatings by electron microscopy and modulus mapping

International Nuclear Information System (INIS)

Pemmasani, Sai Pramod; Rajulapati, Koteswararao V.; Ramakrishna, M.; Valleti, Krishna; Gundakaram, Ravi C.; Joshi, Shrikant V.

2013-01-01

This paper discusses multi-scale characterization of physical vapour deposited multilayer nitride coatings using a combination of electron microscopy and modulus mapping. Multilayer coatings with a triple layer structure based on TiAlN and nanocomposite nitrides with a nano-multilayered architecture were deposited by Cathodic arc deposition and detailed microstructural studies were carried out employing Energy Dispersive Spectroscopy, Electron Backscattered Diffraction, Focused Ion Beam and Cross sectional Transmission Electron Microscopy in order to identify the different phases and to study microstructural features of the various layers formed as a result of the deposition process. Modulus mapping was also performed to study the effect of varying composition on the moduli of the nano-multilayers within the triple layer coating by using a Scanning Probe Microscopy based technique. To the best of our knowledge, this is the first attempt on modulus mapping of cathodic arc deposited nitride multilayer coatings. This work demonstrates the application of Scanning Probe Microscopy based modulus mapping and electron microscopy for the study of coating properties and their relation to composition and microstructure. - Highlights: • Microstructure of a triple layer nitride coating studied at multiple length scales. • Phases identified by EDS, EBSD and SAED (TEM). • Nanolayered, nanocomposite structure of the coating studied using FIB and TEM. • Modulus mapping identified moduli variation even in a nani-multilayer architecture

Optically and non-optically excited thermography for composites: A review

Science.gov (United States)

Yang, Ruizhen; He, Yunze

2016-03-01

Composites, such as glass fiber reinforced polymer (GFRP) and carbon fiber reinforced polymer (CFRP), and adhesive bonding are being increasingly used in fields of aerospace, renewable energy, civil and architecture, and other industries. Flaws and damages are inevitable during either fabrication or lifetime of composites structures or components. Thus, nondestructive testing (NDT) are extremely required to prevent failures and to increase reliability of composite structures or components in both manufacture and in-service inspection. Infrared thermography techniques including pulsed thermography, pulsed phase thermography, and lock-in thermography have shown the great potential and advantages. Besides conventional optical thermography, other sources such as laser, eddy current, microwave, and ultrasound excited thermography are drawing increasingly attentions for composites. In this work, a fully, in-depth and comprehensive review of thermography NDT techniques for composites inspection was conducted based on an orderly and concise literature survey and detailed analysis. Firstly, basic concepts for thermography NDT were defined and introduced, such as volume heating thermography. Next, the developments of conventional optic, laser, eddy current, microwave, and ultrasound thermography for composite inspection were reviewed. Then, some case studies for scanning thermography were also reviewed. After that, the strengths and limitations of thermography techniques were concluded through comparison studies. At last, some research trends were predicted. This work containing critical overview, detailed comparison and extensive list of references will disseminates knowledge between users, manufacturers, designers and researchers involved in composite structures or components inspection by means of thermography NDT techniques.

Charge carrier transport properties in layer structured hexagonal boron nitride

Directory of Open Access Journals (Sweden)

T. C. Doan

2014-10-01

Full Text Available Due to its large in-plane thermal conductivity, high temperature and chemical stability, large energy band gap (˜ 6.4 eV, hexagonal boron nitride (hBN has emerged as an important material for applications in deep ultraviolet photonic devices. Among the members of the III-nitride material system, hBN is the least studied and understood. The study of the electrical transport properties of hBN is of utmost importance with a view to realizing practical device applications. Wafer-scale hBN epilayers have been successfully synthesized by metal organic chemical deposition and their electrical transport properties have been probed by variable temperature Hall effect measurements. The results demonstrate that undoped hBN is a semiconductor exhibiting weak p-type at high temperatures (> 700 °K. The measured acceptor energy level is about 0.68 eV above the valence band. In contrast to the electrical transport properties of traditional III-nitride wide bandgap semiconductors, the temperature dependence of the hole mobility in hBN can be described by the form of μ ∝ (T/T0−α with α = 3.02, satisfying the two-dimensional (2D carrier transport limit dominated by the polar optical phonon scattering. This behavior is a direct consequence of the fact that hBN is a layer structured material. The optical phonon energy deduced from the temperature dependence of the hole mobility is ħω = 192 meV (or 1546 cm-1, which is consistent with values previously obtained using other techniques. The present results extend our understanding of the charge carrier transport properties beyond the traditional III-nitride semiconductors.

Heterostructures for Increased Quantum Efficiency in Nitride LEDs

Energy Technology Data Exchange (ETDEWEB)

Davis, Robert F. [Carnegie Mellon Univ., Pittsburgh, PA (United States)

2010-09-30

Task 1. Development of an advanced LED simulator useful for the design of efficient nitride-based devices. Simulator will contain graphical interface software that can be used to specify the device structure, the material parameters, the operating conditions and the desired output results. Task 2. Theoretical and experimental investigations regarding the influence on the microstructure, defect concentration, mechanical stress and strain and IQE of controlled changes in the chemistry and process route of deposition of the buffer layer underlying the active region of nitride-based blue- and greenemitting LEDs. Task 3. Theoretical and experimental investigations regarding the influence on the physical properties including polarization and IQE of controlled changes in the geometry, chemistry, defect density, and microstructure of components in the active region of nitride-based blue- and green-emitting LEDs. Task 4. Theoretical and experimental investigations regarding the influence on IQE of novel heterostructure designs to funnel carriers into the active region for enhanced recombination efficiency and elimination of diffusion beyond this region. Task 5. Theoretical and experimental investigations regarding the influence of enhanced p-type doping on the chemical, electrical, and microstructural characteristics of the acceptor-doped layers, the hole injection levels at Ohmic contacts, the specific contact resistivity and the IQE of nitride-based blue- and green-emitting LEDs. Development and optical and electrical characterization of reflective Ohmic contacts to n- and p-type GaN films.

Ultra-low threshold gallium nitride photonic crystal nanobeam laser

Energy Technology Data Exchange (ETDEWEB)

Niu, Nan, E-mail: nanniu@fas.harvard.edu; Woolf, Alexander; Wang, Danqing; Hu, Evelyn L. [School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138 (United States); Zhu, Tongtong; Oliver, Rachel A. [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Quan, Qimin [Rowland Institute at Harvard University, Cambridge, Massachusetts 02142 (United States)

2015-06-08

We report exceptionally low thresholds (9.1 μJ/cm{sup 2}) for room temperature lasing at ∼450 nm in optically pumped Gallium Nitride (GaN) nanobeam cavity structures. The nanobeam cavity geometry provides high theoretical Q (>100 000) with small modal volume, leading to a high spontaneous emission factor, β = 0.94. The active layer materials are Indium Gallium Nitride (InGaN) fragmented quantum wells (fQWs), a critical factor in achieving the low thresholds, which are an order-of-magnitude lower than obtainable with continuous QW active layers. We suggest that the extra confinement of photo-generated carriers for fQWs (compared to QWs) is responsible for the excellent performance.

Ultra-low threshold gallium nitride photonic crystal nanobeam laser

International Nuclear Information System (INIS)

Niu, Nan; Woolf, Alexander; Wang, Danqing; Hu, Evelyn L.; Zhu, Tongtong; Oliver, Rachel A.; Quan, Qimin

2015-01-01

We report exceptionally low thresholds (9.1 μJ/cm 2 ) for room temperature lasing at ∼450 nm in optically pumped Gallium Nitride (GaN) nanobeam cavity structures. The nanobeam cavity geometry provides high theoretical Q (>100 000) with small modal volume, leading to a high spontaneous emission factor, β = 0.94. The active layer materials are Indium Gallium Nitride (InGaN) fragmented quantum wells (fQWs), a critical factor in achieving the low thresholds, which are an order-of-magnitude lower than obtainable with continuous QW active layers. We suggest that the extra confinement of photo-generated carriers for fQWs (compared to QWs) is responsible for the excellent performance

Microstructural evolution during nitriding, finite element simulation and experimental assessment

Energy Technology Data Exchange (ETDEWEB)

Hassani-Gangaraj, S.M. [Politecnico di Milano, Dipartimento di Meccanica, Via La Masa, 1, 20156 Milano (Italy); Guagliano, M., E-mail: mario.guagliano@polimi.it [Politecnico di Milano, Dipartimento di Meccanica, Via La Masa, 1, 20156 Milano (Italy)

2013-04-15

A finite element simulation of nitriding is proposed in this paper, using the analogy between diffusion and heat conduction, to overcome the shortcomings of the classical internal oxidation model in predicting the kinetics of layer growth and nitrogen distribution during nitriding. To verify the model, a typical gas nitriding has been carried out on an axisymmetric specimen. Treated specimen has been characterized using optical microscopy (OM), scanning electron microscopy (SEM), micro-hardness and X-Ray diffraction (XRD) measurements. It was found that the so-called diffusion zone can be divided into two parts with different influence on the mechanical characteristics including residual stress and hardening. First layer which is a two phase region of ferritic matrix and γ′ (Fe{sub 4}N) makes further improvement with respect to the second layer which is a solid solution of nitrogen in ferrite. The formation of that two phase region, which is not predicted by classical model, can be efficiently recognized by the proposed model. It is also proved that the model has the ability to consider the geometry dependency of layer growth and formation in nitriding.

Experimental study of optical fibers influence on composite

Science.gov (United States)

Liu, Rong-Mei; Liang, Da-Kai

2010-03-01

Bending strength and elasticity modulus of composite, with and without embedded optical fibers, were experimentally studied. Two kinds of laminates, which were denoted as group 1 and group 2, were fabricated from an orthogonal woven glass/epoxy prepreg. Since the normal stress value becomes the biggest at the surface of a beam, the optical fibers were embedded at the outmost layer and were all along the loading direction. Four types of materials, using each kind of laminated prepreg respectively, were manufactured. The embedded optical fibers for the 4 material types were 0, 10, 30 and 50 respectively. Three-point bending tests were carried out on the produced specimens to study the influence of embedded optical fiber on host composite. The experimental results indicated that the materials in group 2 were more sensitive to the embedded optical fibers.

Ion nitriding of aluminium

International Nuclear Information System (INIS)

Fitz, T.

2002-09-01

The present study is devoted to the investigation of the mechanism of aluminium nitriding by a technique that employs implantation of low-energy nitrogen ions and diffusional transport of atoms. The nitriding of aluminium is investigated, because this is a method for surface modification of aluminium and has a potential for application in a broad spectrum of fields such as automobile, marine, aviation, space technologies, etc. However, at present nitriding of aluminium does not find any large scale industrial application, due to problems in the formation of stoichiometric aluminium nitride layers with a sufficient thickness and good quality. For the purposes of this study, ion nitriding is chosen, as an ion beam method with the advantage of good and independent control over the process parameters, which thus can be related uniquely to the physical properties of the resulting layers. Moreover, ion nitriding has a close similarity to plasma nitriding and plasma immersion ion implantation, which are methods with a potential for industrial application. (orig.)

Low-temperature direct synthesis of mesoporous vanadium nitrides for electrochemical capacitors

Science.gov (United States)

Lee, Hae-Min; Jeong, Gyoung Hwa; Kim, Sang-Wook; Kim, Chang-Koo

2017-04-01

Mesoporous vanadium nitrides are directly synthesized by a one-step chemical precipitation method at a low temperature (70 °C). Structural and morphological analyses reveal that vanadium nitride consist of long and slender nanowhiskers, and mesopores with diameters of 2-5 nm. Compositional analysis confirms the presence of vanadium in the VN structure, along with oxidized vanadium. The cyclic voltammetry and charge-discharge tests indicate that the obtained material stores charges via a combination of electric double-layer capacitance and pseudocapacitance mechanisms. The vanadium nitride electrode exhibits a specific capacitance of 598 F/g at a current density of 4 A/g. After 5000 charge-discharge cycles, the electrode has an equivalent series resistance of 1.42 Ω and retains 83% of its initial specific capacitance. This direct low-temperature synthesis of mesoporous vanadium nitrides is a simple and promising method to achieve high specific capacitance and low equivalent series resistance for electrochemical capacitor applications.

Multi-Functional All BN-BN Composites

Data.gov (United States)

National Aeronautics and Space Administration — Development of multifunctional Boron Nitride nanotube-Boron Nitride (BN-BN) composites to provide novel energy transducers, thermal conductors, anti-penetrator/wear...

Multifunctional Electroactive Nanocomposites Based on Piezoelectric Boron Nitride Nanotubes

Science.gov (United States)

Kang, Jin Ho; Sauti, Godfrey; Park, Cheol; Yamakov, Vesselin I.; Wise, Kristopher E.; Lowther, Sharon E.; Fay, Catharine C.; Thibeault, Sheila A.; Bryant, Robert G.

2015-01-01

Space exploration missions require sensors and devices capable of stable operation in harsh environments such as those that include high thermal fluctuation, atomic oxygen, and high-energy ionizing radiation. However, conventional or state-of-the-art electroactive materials like lead zirconate titanate, poly(vinylidene fluoride), and carbon nanotube (CNT)-doped polyimides have limitations on use in those extreme applications. Theoretical studies have shown that boron nitride nanotubes (BNNTs) have strength-to-weight ratios comparable to those of CNTs, excellent high-temperature stability (to 800 C in air), large electroactive characteristics, and excellent neutron radiation shielding capability. In this study, we demonstrated the experimental electroactive characteristics of BNNTs in novel multifunctional electroactive nanocomposites. Upon application of an external electric field, the 2 wt % BNNT/polyimide composite was found to exhibit electroactive strain composed of a superposition of linear piezoelectric and nonlinear electrostrictive components. When the BNNTs were aligned by stretching the 2 wt % BNNT/polyimide composite, electroactive characteristics increased by about 460% compared to the nonstretched sample. An all-nanotube actuator consisting of a BNNT buckypaper layer between two single-walled carbon nanotube buck-paper electrode layers was found to have much larger electroactive properties. The additional neutron radiation shielding properties and ultraviolet/visible/near-infrared optical properties of the BNNT composites make them excellent candidates for use in the extreme environments of space missions. utilizing the unique characteristics of BNNTs.

Wear monitoring of protective nitride coatings using image processing

DEFF Research Database (Denmark)

Rasmussen, Inge Lise; Guibert, M.; Belin, M.

2010-01-01

-meter with up to 105 19 repetitive cycles, eventually leaving the embedded TiN signal layer uncovered at the bottom the wear scar. 20 The worn surface was characterized by subsequent image processing. A color detection of the wear scar with 21 the exposed TiN layer by a simple optical imaging system showed......A double-layer model system, consisting of a thin layer of tribological titanium aluminum nitride (TiAlN) on 17 top of titanium nitride (TiN), was deposited on polished 100Cr6 steel substrates. The TiAlN top-coatings 18 were exposed to abrasive wear by a reciprocating wear process in a linear tribo...... a significant increase up to a factor of 2 of 22 the relative color values from the TiAlN top layers to the embedded TiN signal layers. This behavior agrees 23 well with the results of reflectance detection experiment with a red laser optical system on the same system. 24 Thus we have demonstrated that image...

Improvement of the fatigue strength of AISI 4140 steel by an ion nitriding process

Energy Technology Data Exchange (ETDEWEB)

Celik, A. [Atatuerk Univ., Erzurum (Turkey). Dept. of Mech. Eng.; Karadeniz, S. [Dokuz Eyluel Univ., Izmir (Turkey). Dept. of Mech. Eng.

1995-06-01

The influence of plasma nitriding on the fatigue behaviour of AISI 4140 low-alloy steel was investigated under varying process conditions of temperature (500-600 C), time (1-12 h), heat treatment before ion nitriding (quenched and tempered, normalized) and gas mixture (50% H{sub 2}-50% N{sub 2}). A rotating bending fatigue machine was used to determine the fatigue strength. It was found that the plasma nitriding improves the fatigue strength and increases the fatigue limit depending on the surface hardness of the case depth. The microstructure of surface and diffusion layers was examined by optical microscopy. The fracture surface of specimens and the origin of fatigue cracks were observed by scanning electron microscopy.

Diffusion of nitrogen in austenitic phase: Application to nitriding of stainless steels

Directory of Open Access Journals (Sweden)

Torchane Lazhar

2014-04-01

Full Text Available The nitriding treatment of the martensitic stainless steels aims to harden and to introduce compressive stresses on the surface of steel. Hardening is resulting of the martensitic transformation of the austenitic matrix enriched into nitrogen during cooling and of the germination and the nitride growth. In order to preserve the stainless character of the nitrided layer, it is imperative to control precipitation within the zone affected by the treatment. Our task consists in showing that is possible to control the composition of the gas atmosphere containing ammonia and argon and to carry out on the surface of nitrided samples at 1050°C two types of configuration of layers : a single phase layer made up by martensite enriched in nitrogen α’N and or a two phase layer made up by austenite γN and martensite α’N enriched in nitrogen.

A Modified Nitride-Based Fuel for Long Core Life and Proliferation Resistance

International Nuclear Information System (INIS)

Ebbinghaus, B; Choi, J; Meier, T

2003-01-01

A modified nitride-based uranium fuel to support the small, secured, transportable, and autonomous reactor (SSTAR) concept is initiated at Lawrence Livermore National laboratory (LLNL). This project centers on the evaluation of modified uranium nitride fuels imbedded with other inert (e.g. ZrN), neutron-absorbing (e.g. HfN) , or breeding (e.g. ThN) nitrides to enhance the fuel properties to achieve long core life with a compact reactor design. A long-life fuel could minimize the need for on-site refueling and spent-fuel storage. As a result, it could significantly improve the proliferation resistance of the reactor/fuel systems. This paper discusses the potential benefits and detriments of modified nitride-based fuels using the criteria of compactness, long-life, proliferation resistance, fuel safety, and waste management. Benefits and detriments are then considered in recommending a select set of compositions for further study

Influence of the alloy composition on the oxidation and internal-nitridation behaviour of nickel-base superalloys

International Nuclear Information System (INIS)

Krupp, U.; Christ, H.-J.

1999-01-01

Internal nitridation of nickel-base superalloys takes place as a consequence of the failure of protecting oxide scales (Al 2 O 3 and Cr 2 O 3 , respectively) and leads to a deterioration of the material properties due to near-surface embrittlement caused by the nitrides precipitated (TiN and AlN, respectively) and due to near-surface dissolution of the γ' phase. By using thermogravimetric methods in a temperature range between 800 C and 1100 C supplemented by microstructural examinations, the failure potential due to internal nitridation could be documented. A quantification was carried out by extending the experimental program to thermogravimetric studies in a nearly oxygen-free nitrogen atmosphere which was also applied to various model alloys of the system Ni-Cr-Al-Ti. It could be shown that the nitrogen diffusivity and solubility in nickel-base alloys is influenced particularly by the chromium concentration. An increasing chromium content leads to an enhanced internal-nitridation attack. (orig.)

Corrosion-electrochemical characteristics of oxide-carbide and oxide-nitride coatings formed by electrolytic plasma

International Nuclear Information System (INIS)

Tomashov, N.D.; Chukalovskaya, T.V.; Medova, I.L.; Duradzhi, V.N.; Plavnik, G.M.

1990-01-01

The composition, structure, microhardness and corrosion-electrochemical properties of oxide-carbide and oxide-nitride coatings on titanium in 5n H 2 SO 4 , 50 deg, produced by the method of chemical-heat treatment in electrolytic plasma, containing saturation components of nitrogen and carbon, were investigated. It is shown that the coatings produced have increased hardness, possess high corrosion resistance in sulfuric acid solution at increased temperature, as to their electrochemcial behaviour they are similar to titanium carbide and nitride respectively. It is shown that high corrosion resistance is ensured by electrochemical mechanism of the oxide-carbide and oxide-nitride coating protection

Room-temperature ballistic transport in III-nitride heterostructures.

Science.gov (United States)

Matioli, Elison; Palacios, Tomás

2015-02-11

Room-temperature (RT) ballistic transport of electrons is experimentally observed and theoretically investigated in III-nitrides. This has been largely investigated at low temperatures in low band gap III-V materials due to their high electron mobilities. However, their application to RT ballistic devices is limited by their low optical phonon energies, close to KT at 300 K. In addition, the short electron mean-free-path at RT requires nanoscale devices for which surface effects are a limitation in these materials. We explore the unique properties of wide band-gap III-nitride semiconductors to demonstrate RT ballistic devices. A theoretical model is proposed to corroborate experimentally their optical phonon energy of 92 meV, which is ∼4× larger than in other III-V semiconductors. This allows RT ballistic devices operating at larger voltages and currents. An additional model is described to determine experimentally a characteristic dimension for ballistic transport of 188 nm. Another remarkable property is their short carrier depletion at device sidewalls, down to 13 nm, which allows top-down nanofabrication of very narrow ballistic devices. These results open a wealth of new systems and basic transport studies possible at RT.

Fiber Optic Thermal Health Monitoring of Composites

Science.gov (United States)

Wu, Meng-Chou; Winfree, William P.; Moore, Jason P.

2010-01-01

A recently developed technique is presented for thermographic detection of flaws in composite materials by performing temperature measurements with fiber optic Bragg gratings. Individual optical fibers with multiple Bragg gratings employed as surface temperature sensors were bonded to the surfaces of composites with subsurface defects. The investigated structures included a 10-ply composite specimen with subsurface delaminations of various sizes and depths. Both during and following the application of a thermal heat flux to the surface, the individual Bragg grating sensors measured the temporal and spatial temperature variations. The data obtained from grating sensors were analyzed with thermal modeling techniques of conventional thermography to reveal particular characteristics of the interested areas. Results were compared with the calculations using numerical simulation techniques. Methods and limitations for performing in-situ structural health monitoring are discussed.

Nitride stabilized core/shell nanoparticles

Science.gov (United States)

Kuttiyiel, Kurian Abraham; Sasaki, Kotaro; Adzic, Radoslav R.

2018-01-30

Nitride stabilized metal nanoparticles and methods for their manufacture are disclosed. In one embodiment the metal nanoparticles have a continuous and nonporous noble metal shell with a nitride-stabilized non-noble metal core. The nitride-stabilized core provides a stabilizing effect under high oxidizing conditions suppressing the noble metal dissolution during potential cycling. The nitride stabilized nanoparticles may be fabricated by a process in which a core is coated with a shell layer that encapsulates the entire core. Introduction of nitrogen into the core by annealing produces metal nitride(s) that are less susceptible to dissolution during potential cycling under high oxidizing conditions.

Composition and optical properties tunability of hydrogenated silicon carbonitride thin films deposited by reactive magnetron sputtering

Science.gov (United States)

Bachar, A.; Bousquet, A.; Mehdi, H.; Monier, G.; Robert-Goumet, C.; Thomas, L.; Belmahi, M.; Goullet, A.; Sauvage, T.; Tomasella, E.

2018-06-01

Radiofrequency reactive magnetron sputtering was used to deposit hydrogenated amorphous silicon carbonitride (a-SiCxNy:H) at 400 °C by sputtering a silicon target under CH4 and N2 reactive gas mixture. Rutherford backscattering spectrometry revealed that the change of reactive gases flow rate (the ratio R = FN2/(FN2+FCH4)) induced a smooth chemical composition tunability from a silicon carbide-like film for R = 0 to a silicon nitride-like one at R = 1 with a large area of silicon carbonitrides between the two regions. The deconvolution of Fourier Transform InfraRed and X-ray photoelectron spectroscopy spectrum highlighted a shift of the chemical environment of the deposited films corresponding to the changes seen by RBS. The consequence of these observations is that a control of refractive index in the range of [1.9-2.5] at λ = 633 nm and optical bandgap in the range [2 eV-3.8 eV] have been obtained which induces that these coatings can be used as antireflective coatings in silicon photovoltaic cells.

Fabrication of vanadium nitride by carbothermal nitridation reaction

International Nuclear Information System (INIS)

Wang Xitang; Wang Zhuofu; Zhang Baoguo; Deng Chengji

2005-01-01

Vanadium nitride is produced from V 2 O 5 by carbon-thermal reduction and nitridation. When the sintered temperature is above 1273 K, VN can be formed, and the nitrogen content of the products increased with the firing temperature raised, and then is the largest when the sintered temperature is 1573 K. The C/V 2 O 5 mass ratio of the green samples is the other key factor affecting on the nitrogen contents of the products. The nitrogen content of the products reaches the most when the C/V 2 O 5 mass ratio is 0.33, which is the theoretical ratio of the carbothermal nitridation of V 2 O 5 . (orig.)

Tuning the electronic and optical properties of hexagonal boron-nitride nanosheet by inserting graphene quantum dots

Science.gov (United States)

Ding, Yi-Min; Shi, Jun-Jie; Zhang, Min; Wu, Meng; Wang, Hui; Cen, Yu-Lang; Pan, Shu-Hang; Guo, Wen-Hui

2018-02-01

It is difficult to integrate two-dimensional (2D) graphene and hexagonal boron-nitride (h-BN) in optoelectronic nanodevices, due to the semi-metal and insulator characteristic of graphene and h-BN, respectively. Using the state-of-the-art first-principles calculations based on many-body perturbation theory, we investigate the electronic and optical properties of h-BN nanosheet embedded with graphene dots. We find that C atom impurities doped in h-BN nanosheet tend to phase-separate into graphene quantum dots (QD), and BNC hybrid structure, i.e. a graphene dot within a h-BN background, can be formed. The band gaps of BNC hybrid structures have an inverse relationship with the size of graphene dot. The calculated optical band gaps for BNC structures vary from 4.71 eV to 3.77 eV, which are much smaller than that of h-BN nanosheet. Furthermore, the valence band maximum is located in C atoms bonded to B atoms and conduction band minimum is located in C atoms bonded to N atoms, which means the electron and hole wave functions are closely distributed around the graphene dot. The bound excitons, localized around the graphene dot, determine the optical spectra of the BNC hybrid structures, in which the exciton binding energies decrease with increase in the size of graphene dots. Our results provide an important theoretical basis for the design and development of BNC-based optoelectronic nanodevices.

Thermodynamics of silicon nitridation - Effect of hydrogen

Science.gov (United States)

Shaw, N. J.; Zeleznik, F. J.

1982-01-01

Equilibrium compositions for the nitridization of Si were calculated to detect the effectiveness of H2 in removal of the oxide film and in increasing the concentration of SiO and reducing the proportions of O2. Gibbs free energy for the formation of SiN2O was computed above 1685 K, and at lower temperatures. The thermodynamic properties of SiN2O2 were then considered from 1000-3000 K, taking into account the known thermodynamic data for 39 molecular combinations of the Si, Ni, and O. The gases formed were assumed ideal mixtures with pure phase condensed species. The mole fractions were obtained for a system of SiO2 with each Si particle covered with a thin layer of SiO2 before nitridation, and a system in which the nitriding atmosphere had access to the Si. The presence of H2 was determined to enhance the removal of NiO2 in the first system, decrease the partial pressure of O2, increase the partial pressures of SiO, Si, H2O, NH3, and SiH4, while its effects were negligible in the Si system.

Aspects of the practical application of titanium alloys after low temperature nitriding glow discharge in hydrogen- free -gas media

International Nuclear Information System (INIS)

Mashovets, N.S.; Pastukh, I.M.; Voloshko, S.M.

2017-01-01

Highlights: • Surface modification of titanium alloys were carried out by low-temperature nitriding in a glow discharge in hydrogen-free environment. • Research into the phase composition was performed by X-ray diffraction, X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). • The above material shows the promise of the technology of low-temperature hydrogen-nitriding by glow discharge. This greatly expands the range of practical applications of titanium alloys. - Abstract: X-ray diffraction analysis, X-ray photoelectron spectroscopy, and Electron Auger-spectroscopy investigation of phase transformation on the surface of the VT8 titanium alloy after a low temperature hydrogen-free nitriding in a glow discharge. Operational characteristics of titanium alloys defined physical-mechanical characteristics of the surface and their phase composition, which depend on the process parameters of nitriding. Surface modification of titanium alloys were carried out by low-temperature nitriding in a glow discharge in hydrogen-free environment. The main advantage of this method lies in the absence of hydrogen embrittlement and complete environmental safety process. Application of the glow discharge can not only speed up the process by the order of the diffusion surface saturation with nitrogen, but also significantly alters the kinetics of the process and quality of the nitrided layer, in particular its physio-mechanical properties and phase composition. For research purposes, the standards from an α + β alloy Ti-Al6-Cr2-Mo2,5 (VT8) were used. Research into the phase composition was performed by X-ray diffraction, X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). Stratified analysis by AES was conducted by etching the surface of the samples’ argon ion beam with diameters of 1.5 mm with an energy of 3000 eV and a current density of 400 mA/cm 2 . The above material shows the promise of the technology of low

Aspects of the practical application of titanium alloys after low temperature nitriding glow discharge in hydrogen- free -gas media

Energy Technology Data Exchange (ETDEWEB)

Mashovets, N.S., E-mail: mashovets@rambler.ru [Khmelnickiy National University (Ukraine); Pastukh, I.M., E-mail: pastim@mail.ru [Khmelnickiy National University (Ukraine); Voloshko, S.M. [Khmelnickiy National University (Ukraine); National Technical University of Ukraine “Kyiv Polytechnic Institute” (Ukraine)

2017-01-15

Highlights: • Surface modification of titanium alloys were carried out by low-temperature nitriding in a glow discharge in hydrogen-free environment. • Research into the phase composition was performed by X-ray diffraction, X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). • The above material shows the promise of the technology of low-temperature hydrogen-nitriding by glow discharge. This greatly expands the range of practical applications of titanium alloys. - Abstract: X-ray diffraction analysis, X-ray photoelectron spectroscopy, and Electron Auger-spectroscopy investigation of phase transformation on the surface of the VT8 titanium alloy after a low temperature hydrogen-free nitriding in a glow discharge. Operational characteristics of titanium alloys defined physical-mechanical characteristics of the surface and their phase composition, which depend on the process parameters of nitriding. Surface modification of titanium alloys were carried out by low-temperature nitriding in a glow discharge in hydrogen-free environment. The main advantage of this method lies in the absence of hydrogen embrittlement and complete environmental safety process. Application of the glow discharge can not only speed up the process by the order of the diffusion surface saturation with nitrogen, but also significantly alters the kinetics of the process and quality of the nitrided layer, in particular its physio-mechanical properties and phase composition. For research purposes, the standards from an α + β alloy Ti-Al6-Cr2-Mo2,5 (VT8) were used. Research into the phase composition was performed by X-ray diffraction, X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). Stratified analysis by AES was conducted by etching the surface of the samples’ argon ion beam with diameters of 1.5 mm with an energy of 3000 eV and a current density of 400 mA/cm{sup 2}. The above material shows the promise of the technology of low

Tuning the properties of visible-light-responsive tantalum (oxy)nitride photocatalysts by non-stoichiometric compositions: A first-principles viewpoint

KAUST Repository

Harb, Moussab

2014-01-01

Finding an ideal photocatalyst for achieving efficient overall water splitting still remains a great challenge. By applying accurate first-principles quantum calculations based on DFT with the screened non-local hybrid HSE06 functional, we bring rational insights at the atomic level into the influence of non-stoichiometric compositions on essential properties of tantalum (oxy)nitride compounds as visible-light-responsive photocatalysts for water splitting. Indeed, recent experiments show that such non-stoichiometry is inherent to the nitridation methods of tantalum oxide with unavoidable oxygen impurities. We considered here O-enriched Ta3N5 and N-enriched TaON materials. Although their structural parameters are found to be very similar to those of pure compounds and in good agreement with available experimental studies, their photocatalytic features for visible-light-driven overall water splitting reactions show different behaviors. Further partial nitration of TaON leads to a narrowed band gap, but partially oxidizing Ta3N5 causes only subtle changes in the gap. The main influence, however, is on the band edge positions relative to water redox potentials. The pure Ta3N5 is predicted to be a good candidate only for H+ reduction and H2 evolution, while the pure TaON is predicted to be a good candidate for water oxidation and O2 evolution. Non-stoichiometry has here a positive influence, since partially oxidized tantalum nitride, Ta(3-x)N(5-5x)O5x (for x ≥ 0.16) i.e. with a composition in between TaON and Ta3N5, reveals suitable band edge positions that correctly bracket the water redox potentials for visible-light-driven overall water splitting reactions. Among the various explored Ta(3-x)N(5-5x)O5x structures, a strong stabilization is obtained for the configuration displaying a strong interaction between the O-impurities and the created Ta-vacancies. In the lowest-energy structure, each created Ta-vacancy is surrounded by five O-impurity species substituting

Method for producing polycrystalline boron nitride

International Nuclear Information System (INIS)

Alexeevskii, V.P.; Bochko, A.V.; Dzhamarov, S.S.; Karpinos, D.M.; Karyuk, G.G.; Kolomiets, I.P.; Kurdyumov, A.V.; Pivovarov, M.S.; Frantsevich, I.N.; Yarosh, V.V.

1975-01-01

A mixture containing less than 50 percent of graphite-like boron nitride treated by a shock wave and highly defective wurtzite-like boron nitride obtained by a shock-wave method is compressed and heated at pressure and temperature values corresponding to the region of the phase diagram for boron nitride defined by the graphite-like compact modifications of boron nitride equilibrium line and the cubic wurtzite-like boron nitride equilibrium line. The resulting crystals of boron nitride exhibit a structure of wurtzite-like boron nitride or of both wurtzite-like and cubic boron nitride. The resulting material exhibits higher plasticity as compared with polycrystalline cubic boron nitride. Tools made of this compact polycrystalline material have a longer service life under impact loads in machining hardened steel and chilled iron. (U.S.)

High temperature resistant cermet and ceramic compositions. [for thermal resistant insulators and refractory coatings

Science.gov (United States)

Phillips, W. M. (Inventor)

1978-01-01

High temperature oxidation resistance, high hardness and high abrasion and wear resistance are properties of cermet compositions particularly to provide high temperature resistant refractory coatings on metal substrates, for use as electrical insulation seals for thermionic converters. The compositions comprise a sintered body of particles of a high temperature resistant metal or metal alloy, preferably molybdenum or tungsten particles, dispersed in and bonded to a solid solution formed of aluminum oxide and silicon nitride, and particularly a ternary solid solution formed of a mixture of aluminum oxide, silicon nitride and aluminum nitride. Ceramic compositions comprising a sintered solid solution of aluminum oxide, silicon nitride and aluminum nitride are also described.

Electronic and optical properties of titanium nitride bulk and surfaces from first principles calculations

Science.gov (United States)

Mehmood, Faisal; Pachter, Ruth; Murphy, Neil R.; Johnson, Walter E.

2015-11-01

Prediction of the frequency-dependent dielectric function of thin films poses computational challenges, and at the same time experimental characterization by spectroscopic ellipsometry remains difficult to interpret because of changes in stoichiometry and surface morphology, temperature, thickness of the film, or substrate. In this work, we report calculations for titanium nitride (TiN), a promising material for plasmonic applications because of less loss and other practical advantages compared to noble metals. We investigated structural, electronic, and optical properties of stoichiometric bulk TiN, as well as of the TiN(100), TiN(110), and TiN(111) outermost surfaces. Density functional theory (DFT) and many-body GW methods (Green's (G) function-based approximation with screened Coulomb interaction (W)) were used, ranging from G0W0, GW0 to partially self-consistent sc-GW0, as well as the GW-BSE (Bethe-Salpeter equation) and time-dependent DFT (TDDFT) methods for prediction of the optical properties. Structural parameters and the band structure for bulk TiN were shown to be consistent with previous work. Calculated dielectric functions, plasma frequencies, reflectivity, and the electron energy loss spectrum demonstrated consistency with experiment at the GW0-BSE level. Deviations from experimental data are expected due to varying experimental conditions. Comparison of our results to spectroscopic ellipsometry data for realistic nanostructures has shown that although TDDFT may provide a computationally feasible level of theory in evaluation of the dielectric function, application is subject to validation with GW-BSE calculations.

X-ray photoelectron spectroscopy and Auger electron spectroscopy studies on the passivation behavior of plasma-nitrided low alloy steel in nitric acid

Energy Technology Data Exchange (ETDEWEB)

Chyou, S.D.; Shih, H.C. (Dept. of Materials Science and Engineering, National Tsing Hua Univ., Hsinchu (Taiwan))

1991-12-14

Nitrided SAE 4140 steel has been passivated by concentrated nitric acid. The resulting film was characterized using a combination of surface-analytical techniques, such as X-ray photoelectron spectroscopy (XPS) to evaluate the chemical composition of the passive film. Auger electron spectroscopy (AES) combined with ion etching was used to determine the composition depth profiles of nitrided surface. It was found that preferential dissolution of iron leads to enhanced nitrogen and chromium concentrations within the oxynitrided layer. A dense protective oxynitrided layer was found to be formed on the nitrided surface when the concentration of nitric acid was as high as 8 M. The results of X-ray diffraction, XPS and AES analyses conclude that the protective nitride layer is composed of (Fe,Cr){sub 4}N, (Fe,Cr){sub 2-3}N and CrN in the inner layer, Fe{sub 2}O{sub 3}, Cr{sub 2}O{sub 3} and remnant nitrides in the middle layer and nitrides accompanying Cr(OH){sub 3}.H{sub 2}O and {gamma}'-FeOOH in the outermost layer. (orig.).

Ionic nitriding of high chromium martensitic stainless steels

International Nuclear Information System (INIS)

Bruhl, S.P; Charadia, R; Vaca, L.S; Cimetta, J

2008-01-01

Martensitic stainless steels are used in industrial applications where resistance to corrosion and mechanical resistance are needed simultaneously. These steels are normally used in tempering and annealing condition which gives them hardnesses of 500 and 600 HV (about 54 HRC). Ionic nitriding is an assisted diffusion technique that has recently been successfully applied to harden austenitic stainless steels without reducing their resistance to corrosion. The application with AISI 420 martensitic steels has not given good results yet, because in most cases, it affects their corrosion resistance. This work presents the results of the pulsed nitriding of martensitic steels with a higher chrome content, such as the M340 and M333 Boehler steels and they are compared with the same materials after tempering and annealing, without nitriding. The influence of the variations in the parameters of the process, such as the percentage of active time in the pulsed wave, partial nitrogen pressure, current density and effective tension in the microstructure, hardness and wear and corrosion resistance was studied. The microstructure was studied with an optic microscope; the wear resistance with abrasion tests following ASTM G-65 and corrosion with 100 hour long saline haze tests, in a device built according to ASTM B117. Hardness was found to rise to values of 1000 to 1350 HV in all the steels after ionic nitriding, the modified layers oscillated from 3 to 15 microns. As a result, wear resistance also increased, with differences depending on the microstructure and the thickness of the modified layer. However, corrosion resistance was not good, except in the case of the M333 steel test piece with less hardness and a less thick nitrided layer without a noticeable interphase (au)

A micro-spectroscopy study on the influence of chemical residues from nanofabrication on the nitridation chemistry of Al nanopatterns

Energy Technology Data Exchange (ETDEWEB)

Qi, B., E-mail: bing@raunvis.hi.is [Physics Department, Science Institute, University of Iceland, Dunhaga 3,107 Reykjavik (Iceland); Olafsson, S. [Physics Department, Science Institute, University of Iceland, Dunhaga 3,107 Reykjavik (Iceland); Zakharov, A.A. [MAX-lab, Lund University, S-22100 Lund (Sweden); Agnarsson, B. [Physics Department, Science Institute, University of Iceland, Dunhaga 3,107 Reykjavik (Iceland); Department of Applied Physics, Chalmers University of Technology, S-41296 Gothenburg (Sweden); Gislason, H.P. [Physics Department, Science Institute, University of Iceland, Dunhaga 3,107 Reykjavik (Iceland); Goethelid, M. [Materialfysik, MAP, ICT, KTH, ELECTRUM 229, 16440 Kista (Sweden)

2012-03-01

We applied spatially resolved photoelectron spectroscopy implemented with an X-ray photoemission electron microscopy (XPEEM) using soft X-ray synchrotron radiation to identify the compositional and morphological inhomogeneities of a SiO{sub 2}/Si substrate surface nanopatterned with Al before and after nitridation. The nanofabrication was conducted by a polymethylmethacrylate (PMMA)-based e-beam lithography and a fluorine-based reactive ion etching (RIE), followed by Al metalization and acetone lift-off. Three types of chemical residues were identified before nitridation: (1) fluorocarbons produced and accumulated mainly during RIE process on the sidewalls of the nanopatterns; (2) a thick Al-bearing PMMA layer and/or (3) a thin PMMA residue layer owing to unsuccessful or partial lift-off of the e-beam unexposed PMMA between the nanopatterns. The fluorocarbons actively influenced the surface chemical composition of the nanopatterns by forming Al-F compounds. After nitridation, in the PMMA residue-free area, the Al-F compounds on the sidewalls were decomposed and transformed to AlN. The PMMA residues between the nanopatterns had no obvious influence on the surface chemical composition and nitridation properties of the Al nanopatterns. They were only partially decomposed by the nitridation. The regional surface morphology of the nanopatterns revealed by the secondary electron XPEEM was consistent with the scanning electron microscopy results.

Effect of ion nitriding on the crystal structure of 3 mol% Y2O3-doped ZrO2 thin-films prepared by the sol-gel method

International Nuclear Information System (INIS)

Ortiz, A.L.; Diaz-Parralejo, A.; Borrero-Lopez, O.; Guiberteau, F.

2006-01-01

We investigated the effect of ion nitriding on the crystal structure of 3 mol% Y 2 O 3 -doped ZrO 2 (3YSZ) thin-films prepared by the sol-gel method. For this purpose, we used X-ray diffractometry to determine the crystalline phases, the lattice parameters, the crystal sizes, and the lattice microstrains, and glow discharge-optical emission spectroscopy to obtain the depth profiles of the elemental chemical composition. We found that nitrogen atoms substitute oxygen atoms in the 3YSZ crystal, thus leading to the formation of unsaturated-substitutional solid solutions with reduced lattice parameters and Zr 0.94 Y 0.06 O 1.72 N 0.17 stoichiometric formula. We also found that ion nitriding does not affect the grain size, but does generate lattice microstrains due to the increase in point defects in the crystalline lattice

Enhancing the Hardness of Sintered SS 17-4PH Using Nitriding Process for Bracket Orthodontic Application

Science.gov (United States)

Suharno, B.; Supriadi, S.; Ayuningtyas, S. T.; Widjaya, T.; Baek, E. R.

2018-01-01

Brackets orthodontic create teeth movement by applying force from wire to bracket then transferred to teeth. However, emergence of friction between brackets and wires reduces load for teeth movement towards desired area. In order to overcome these problem, surface treatment like nitriding chosen as a process which could escalate efficiency of transferred force by improving material hardness since hard materials have low friction levels. This work investigated nitriding treatment to form nitride layer which affecting hardness of sintered SS 17-4PH. The nitride layers produced after nitriding process at various temperature i.e. 470°C, 500°C, 530°C with 8hr holding time under 50% NH3 atmosphere. Optical metallography was conducted to compare microstructure of base and surface metal while the increasing of surface hardness then observed using vickers microhardness tester. Hardened surface layer was obtained after gaseous nitriding process because of nitride layer that contains Fe4N, CrN and Fe-αN formed. Hardness layers can achieved value 1051 HV associated with varies thickness from 53 to 119 μm. The presence of a precipitation process occurring in conjunction with nitriding process can lead to a decrease in hardness due to nitrogen content diminishing in solid solution phase. This problem causes weakening of nitrogen expansion in martensite lattice.

Preparation of uranium nitride

International Nuclear Information System (INIS)

Potter, R.A.; Tennery, V.J.

1976-01-01

A process is described for preparing actinide-nitrides from massive actinide metal which is suitable for sintering into low density fuel shapes by partially hydriding the massive metal and simultaneously dehydriding and nitriding the dehydrided portion. The process is repeated until all of the massive metal is converted to a nitride

Expanded austenite in nitrided layers deposited on austenitic and super austenitic stainless steel grades

International Nuclear Information System (INIS)

Casteletti, L.C.; Fernandes, F.A.P.; Heck, S.C.; Gallego, J.

2010-01-01

In this work nitrided layers deposited on austenitic and super austenitic stainless steels were analyzed through optical microscopy and X-rays diffraction analysis (XRD). It was observed that the formation of N supersaturated phase, called expanded austenite, has promoted significant increment of hardness (> 1000HV). XRD results have indicated the anomalous displacement of the diffracted peaks, in comparison with the normal austenite. This behavior, combined with peaks broadening, it was analyzed in different nitriding temperatures which results showed good agreement with the literature. (author)

Reactive sputter deposition of boron nitride

International Nuclear Information System (INIS)

Jankowski, A.F.; Hayes, J.P.; McKernan, M.A.; Makowiecki, D.M.

1995-10-01

The preparation of fully dense, boron targets for use in planar magnetron sources has lead to the synthesis of Boron Nitride (BN) films by reactive rf sputtering. The deposition parameters of gas pressure, flow and composition are varied along with substrate temperature and applied bias. The films are characterized for composition using Auger electron spectroscopy, for chemical bonding using Raman spectroscopy and for crystalline structure using transmission electron microscopy. The deposition conditions are established which lead to the growth of crystalline BN phases. In particular, the growth of an adherent cubic BN coating requires 400--500 C substrate heating and an applied -300 V dc bias

Electrospun Gallium Nitride Nanofibers

International Nuclear Information System (INIS)

Melendez, Anamaris; Morales, Kristle; Ramos, Idalia; Campo, Eva; Santiago, Jorge J.

2009-01-01

The high thermal conductivity and wide bandgap of gallium nitride (GaN) are desirable characteristics in optoelectronics and sensing applications. In comparison to thin films and powders, in the nanofiber morphology the sensitivity of GaN is expected to increase as the exposed area (proportional to the length) increases. In this work we present electrospinning as a novel technique in the fabrication of GaN nanofibers. Electrospinning, invented in the 1930s, is a simple, inexpensive, and rapid technique to produce microscopically long ultrafine fibers. GaN nanofibers are produced using gallium nitrate and dimethyl-acetamide as precursors. After electrospinning, thermal decomposition under an inert atmosphere is used to pyrolyze the polymer. To complete the preparation, the nanofibers are sintered in a tube furnace under a NH 3 flow. Both scanning electron microscopy and profilometry show that the process produces continuous and uniform fibers with diameters ranging from 20 to a few hundred nanometers, and lengths of up to a few centimeters. X-ray diffraction (XRD) analysis shows the development of GaN nanofibers with hexagonal wurtzite structure. Future work includes additional characterization using transmission electron microscopy and XRD to understand the role of precursors and nitridation in nanofiber synthesis, and the use of single nanofibers for the construction of optical and gas sensing devices.

Optical Bistability in Graded Core-Shell Granular Composites

International Nuclear Information System (INIS)

Wu Ya-Min; Chen Guo-Qing; Xue Si-Zhong; Zhu Zhuo-Wei; Ma Chao-Qun

2012-01-01

The intrinsic optical bistability (OB) of graded core-shell granular composites is investigated. The coated particles are made of cores with gradient dielectric function in c (r) = A(r/a) k and nonlinear shells. In view of the exponential distribution of the core dielectric constant, the potential functions of each region are obtained by solving the Maxwell equations, and the mathematical expressions of electric field in the shells and cores are determined. Numerical study reveals that the optical bistable threshold and the threshold width of the composite medium are dependent on the shell thickness, core dielectric exponent, and power function coefficient. The optical bistable width increases with the decreasing shell thickness and the power exponent and with the increasing power function coefficient

Process for the production of metal nitride sintered bodies and resultant silicon nitride and aluminum nitride sintered bodies

Science.gov (United States)

Yajima, S.; Omori, M.; Hayashi, J.; Kayano, H.; Hamano, M.

1983-01-01

A process for the manufacture of metal nitride sintered bodies, in particular, a process in which a mixture of metal nitrite powders is shaped and heated together with a binding agent is described. Of the metal nitrides Si3N4 and AIN were used especially frequently because of their excellent properties at high temperatures. The goal is to produce a process for metal nitride sintered bodies with high strength, high corrosion resistance, thermal shock resistance, thermal shock resistance, and avoidance of previously known faults.

Aluminum powder size and microstructure effects on properties of boron nitride reinforced aluminum matrix composites fabricated by semi-solid powder metallurgy

International Nuclear Information System (INIS)

Chen, Cunguang; Guo, Leichen; Luo, Ji; Hao, Junjie; Guo, Zhimeng; Volinsky, Alex A.

2015-01-01

Al matrix composite reinforced by hexagonal boron nitride (h-BN) with nearly full densification was successfully fabricated by the semi-solid powder metallurgy technique. The h-BN/Al composites were synthesized with elemental pure Al powder size of d_5_0=35, 12 and 2 μm. The powder morphology and the structural characteristics of the composites were analyzed using X-ray diffraction, scanning and transmission electron microscopy. The density, Brinell hardness and compressive behavior of the samples were characterized. Density measurement of the Al composites revealed that the composite densification can be effectively promoted by plenty of embedded liquid phase under pressure. Composites prepared using Al powder with varying granularity showed different grain characteristics, and in situ recrystallization occurred inside the original grains with 35 μm Al powder. A sharp interface consisting of Al/Al_2O_3/h-BN was present in the composites. Both the compressive strength and the fracture strain of the investigated composites increased with the decrease of the Al powder size, along with the Brinell hardness. The composite with 2 μm Al powder exhibited the highest relative density (99.3%), Brinell harness (HB 128), compressive strength (763 MPa) and fracture strain (0.299).

Magnesium acceptor in gallium nitride. II. Koopmans-tuned Heyd-Scuseria-Ernzerhof hybrid functional calculations of its dual nature and optical properties

Science.gov (United States)

Demchenko, D. O.; Diallo, I. C.; Reshchikov, M. A.

2018-05-01

The problem of magnesium acceptor in gallium nitride is that experimental photoluminescence measurements clearly reveal a shallow defect state, while most theoretical predictions favor a localized polaronic defect state. To resolve this contradiction, we calculate properties of magnesium acceptor using the Heyd-Scuseria-Ernzerhof (HSE) hybrid functional, tuned to fulfill the generalized Koopmans condition. We test Koopmans tuning of HSE for defect calculations in GaN using two contrasting test cases: a deep state of gallium vacancy and a shallow state of magnesium acceptor. The obtained parametrization of HSE allows calculations of optical properties of acceptors using neutral defect-state eigenvalues, without relying on corrections due to charged defects in periodic supercells. Optical transitions and vibrational properties of M gGa defect are analyzed to bring the dual (shallow and deep) nature of this defect into accord with experimental photoluminescence measurements of the ultraviolet band in Mg-doped GaN samples.

Fiber Optic Thermal Detection of Composite Delaminations

Science.gov (United States)

Wu, Meng-Chou; Winfree, William P.

2011-01-01

A recently developed technique is presented for thermographic detection of delaminations in composites by performing temperature measurements with fiber optic Bragg gratings. A single optical fiber with multiple Bragg gratings employed as surface temperature sensors was bonded to the surface of a composite with subsurface defects. The investigated structure was a 10-ply composite specimen with prefabricated delaminations of various sizes and depths. Both during and following the application of a thermal heat flux to the surface, the individual Bragg grating sensors measured the temporal and spatial temperature variations. The data obtained from grating sensors were analyzed with thermal modeling techniques of conventional thermography to reveal particular characteristics of the interested areas. Results were compared and found to be consistent with the calculations using numerical simulation techniques. Also discussed are methods including various heating sources and patterns, and their limitations for performing in-situ structural health monitoring.

Plasmonic Titanium Nitride Nanostructures via Nitridation of Nanopatterned Titanium Dioxide

DEFF Research Database (Denmark)

Guler, Urcan; Zemlyanov, Dmitry; Kim, Jongbum

2017-01-01

Plasmonic titanium nitride nanostructures are obtained via nitridation of titanium dioxide. Nanoparticles acquired a cubic shape with sharper edges following the rock-salt crystalline structure of TiN. Lattice constant of the resulting TiN nanoparticles matched well with the tabulated data. Energy...

Silicon-Nitride-based Integrated Optofluidic Biochemical Sensors using a Coupled-Resonator Optical Waveguide

Directory of Open Access Journals (Sweden)

Jiawei eWANG

2015-04-01

Full Text Available Silicon nitride (SiN is a promising material platform for integrating photonic components and microfluidic channels on a chip for label-free, optical biochemical sensing applications in the visible to near-infrared wavelengths. The chip-scale SiN-based optofluidic sensors can be compact due to a relatively high refractive index contrast between SiN and the fluidic medium, and low-cost due to the complementary metal-oxide-semiconductor (CMOS-compatible fabrication process. Here, we demonstrate SiN-based integrated optofluidic biochemical sensors using a coupled-resonator optical waveguide (CROW in the visible wavelengths. The working principle is based on imaging in the far field the out-of-plane elastic-light-scattering patterns of the CROW sensor at a fixed probe wavelength. We correlate the imaged pattern with reference patterns at the CROW eigenstates. Our sensing algorithm maps the correlation coefficients of the imaged pattern with a library of calibrated correlation coefficients to extract a minute change in the cladding refractive index. Given a calibrated CROW, our sensing mechanism in the spatial domain only requires a fixed-wavelength laser in the visible wavelengths as a light source, with the probe wavelength located within the CROW transmission band, and a silicon digital charge-coupled device (CCD / CMOS camera for recording the light scattering patterns. This is in sharp contrast with the conventional optical microcavity-based sensing methods that impose a strict requirement of spectral alignment with a high-quality cavity resonance using a wavelength-tunable laser. Our experimental results using a SiN CROW sensor with eight coupled microrings in the 680nm wavelength reveal a cladding refractive index change of ~1.3 × 10^-4 refractive index unit (RIU, with an average sensitivity of ~281 ± 271 RIU-1 and a noise-equivalent detection limit (NEDL of 1.8 ×10^-8 RIU ~ 1.0 ×10^-4 RIU across the CROW bandwidth of ~1 nm.

EXPERIMENTAL INVESTIGATION ON TRIBOLOGICAL CHARACTERISTICS OF SILICON NITRIDE REINFORCED ALUMINIUM METAL MATRIX COMPOSITES

Directory of Open Access Journals (Sweden)

D. BHUVANESH

2017-05-01

Full Text Available Aluminium alloy (LM25 reinforced with silicon nitride was fabricated by liquid metallurgy route. The fabricated composite was investigated for dry sliding wear behaviour by conducting experiments using pin-on-disc tribometer. Set of experiments were planned using Taguchi’s technique and data analysis was carried out using L27 orthogonal array. Analysis of Variance (ANOVA technique was used to determine the significance of parameter with respect to wear rate. Signal-to-Noise ratio was employed to detect the most and least influential parameter as well as their level of influence. ‘Smaller the wear’ characteristic was chosen for the analysis of dry sliding wear. Results implied that, the load has the primary effect on the wear succeeded by the effect of sliding velocity and sliding distance. Scanning Electronic Microscopic studies were carried out on worn surfaces to understand the wear mechanism.Tribological results indicated that LM25 aluminium alloy could be better utilized as a material for piston, rotor and bearings for long life in low speed applications.

Electro-optics of novel polymer-liquid crystalline composites

International Nuclear Information System (INIS)

Ibragimov, T.D.; Bayramov, G.M.; Imamaliyev, A.R.; Bayramov, G.M.

2014-01-01

The polymer network liquid crystals based on the liquid crystals H37 and 5CB with PMVP and PEG have been developed. Mesogene substance HOBA is served for stabilization of obtaining composites. Kinetics of network formation is investigated by methods of polarization microscopy and integrated small-angle scattering. It is shown that gel-like states of the composite H-37+PMVP+HOBA and 5CB+PEG+HOBA are formed at polymer concentration above 7 percent and 9 percent, correspondingly. The basic electro-optic parameters of the obtained composites are determined at room temperature. Experimental results are explained by phase separation of the system, diminution of a working area of electro-optical effects and influence of areas with high polymer concentration on areas with their low concentration

Joining and Integration of Silicon Nitride Ceramics for Aerospace and Energy Systems

Science.gov (United States)

Singh, M.; Asthana, R.

2009-01-01

Light-weight, creep-resistant silicon nitride ceramics possess excellent high-temperature strength and are projected to significantly raise engine efficiency and performance when used as turbine components in the next-generation turbo-shaft engines without the extensive cooling that is needed for metallic parts. One key aspect of Si3N4 utilization in such applications is its joining response to diverse materials. In an ongoing research program, the joining and integration of Si3N4 ceramics with metallic, ceramic, and composite materials using braze interlayers with the liquidus temperature in the range 750-1240C is being explored. In this paper, the self-joining behavior of Kyocera Si3N4 and St. Gobain Si3N4 using a ductile Cu-based active braze (Cu-ABA) containing Ti will be presented. Joint microstructure, composition, hardness, and strength as revealed by optical microscopy, scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), Knoop microhardness test, and offset compression shear test will be presented. Additionally, microstructure, composition, and joint strength of Si3N4/Inconel 625 joints made using Cu-ABA, will be presented. The results will be discussed with reference to the role of chemical reactions, wetting behavior, and residual stresses in joints.

Hot pressing of uranium nitride and mixed uranium plutonium nitride

International Nuclear Information System (INIS)

Chang, J.Y.

1975-01-01

The hot pressing characteristics of uranium nitride and mixed uranium plutonium nitride were studied. The utilization of computer programs together with the experimental technique developed in the present study may serve as a useful purpose of prediction and fabrication of advanced reactor fuel and other high temperature ceramic materials for the future. The densification of nitrides follow closely with a plastic flow theory expressed as: d rho/ dt = A/T(t) (1-rho) [1/1-(1-rho)/sup 2/3/ + B1n (1-rho)] The coefficients, A and B, were obtained from experiment and computer curve fitting. (8 figures) (U.S.)

Iron nitride films formed in a r. f. glow discharge

Energy Technology Data Exchange (ETDEWEB)

Li, J.L.; O' Keefe, T.J.; James, W.J. (Depts. of Chemistry and Metallurgical Engineering and Graduate Center for Materials Research, Univ. of Missouri-Rolla (United States))

1992-12-30

Fe[sub 2]N and Fe[sub 3]N films were deposited on an r.f. glow discharge by introducing Fe(CO)[sub 5] and NH[sub 3] into the reactor. The iron nitride films thus formed exhibited sheet conductivities in the range of 10[sup 2]-10[sup 3] ohm[sup -1] cm[sup -1]. They exhibited microhardness ranging from 578 to 659 kg mm[sup -2] on glass slides. The effects of the deposition temperature and the nature of the substrate material on the structure and composition of the films were investigated. An Fe[sub 4]N layer was formed on iron substrates at 400degC in the plasma nitriding process using NH[sub 3] as the gas source. The Fe[sub 4]N layer exhibited a microhardness of 230 kg mm[sup -2]. The effect of the temperature on the formation of the nitrided layer is discussed. (orig.).

Investigation of Ternary Transition-Metal Nitride Systems by Reactive Cosputtering

NARCIS (Netherlands)

Dover, R.B. Van; Hessen, B.; Werder, D.; Chen, C.-H.; Felder, R.J.

1993-01-01

A reactive dc cosputtering technique has been used to evaluate compound formation in bimetallic transition-metal nitride systems. A wide range in M-M’ composition can be studied in a single deposition run, and the method is applicable to nonalloying metal combinations. Using this technique, it was

Remote PECVD silicon nitride films with improved electrical properties for GaAs P-HEMT passivation

CERN Document Server

Sohn, M K; Kim, K H; Yang, S G; Seo, K S

1998-01-01

In order to obtain thin silicon nitride films with excellent electrical and mechanical properties, we employed RPECVD (Remote Plasma Enhanced Chemical Vapor Deposition) process which produces less plasma-induced damage than the conventional PECVD. Through the optical and electrical measurements of the deposited films, we optimized the various RPECVD process parameters. The optimized silicon nitride films showed excellent characteristics such as small etch rate (approx 33 A/min by 7:1 BHF), high breakdown field (>9 MV/cm), and low compressive stress (approx 3.3x10 sup 9 dyne/cm sup 2). We successfully applied thin RPECVD silicon nitride films to the surface passivation of GaAs pseudomorphic high electron mobility transistors (P-HEMTs) with negligible degradations in DC and RF characteristics.

First principles examination of electronic structure and optical features of 4H-GaN1-xPx polytype alloys

Science.gov (United States)

Laref, A.; Hussain, Z.; Laref, S.; Yang, J. T.; Xiong, Y. C.; Luo, S. J.

2018-04-01

By using first-principles calculations, we compute the electronic band structures and typical aspects of the optical spectra of hexagonally structured GaN1-xPx alloys. Although a type III-V semiconductor, GaP commonly possesses a zinc-blende structure with an indirect band gap; as such, it may additionally form hexagonal polytypes under specific growth conditions. The electronic structures and optical properties are calculated by combining a non-nitride III-V semiconductor and a nitride III-V semiconductor, as GaP and GaN crystallizing in a 4H polytype, with the N composition ranging between x = 0-1. For all studied materials, the energy gap is found to be direct. The optical properties of the hexagonal materials may illustrate the strong polarization dependence owing to the crystalline anisotropy. This investigation for GaN1-xPx alloys is anticipated to supply paramount information for applications in the visible/ultraviolet spectral regions. At a specific concentration, x, these alloys would be exclusively appealing candidates for solar-cell applications.

Broadband wavelength conversion in hydrogenated amorphous silicon waveguide with silicon nitride layer

Science.gov (United States)

Wang, Jiang; Li, Yongfang; Wang, Zhaolu; Han, Jing; Huang, Nan; Liu, Hongjun

2018-01-01

Broadband wavelength conversion based on degenerate four-wave mixing is theoretically investigated in a hydrogenated amorphous silicon (a-Si:H) waveguide with silicon nitride inter-cladding layer (a-Si:HN). We have found that enhancement of the non-linear effect of a-Si:H waveguide nitride intermediate layer facilitates broadband wavelength conversion. Conversion bandwidth of 490 nm and conversion efficiency of 11.4 dB were achieved in a numerical simulation of a 4 mm-long a-Si:HN waveguide under 1.55 μm continuous wave pumping. This broadband continuous-wave wavelength converter has potential applications in photonic networks, a type of readily manufactured low-cost highly integrated optical circuits.

Point defects in dilute nitride III-N-As and III-N-P

International Nuclear Information System (INIS)

Chen, W.M.; Buyanova, I.A.; Tu, C.W.; Yonezu, H.

2006-01-01

We provide a brief review of our recent results from optically detected magnetic resonance studies of grown-in non-radiative defects in two most important dilute nitride systems-Ga(In)NAs grown on GaAs substrates and Ga(Al,In)NP grown on Si and GaP substrates. These results have led to the identification of defect complexes in the alloys, involving intrinsic defects such as As Ga antisites and Ga i self-interstitials. They have also shed light on formation mechanisms of the defects and on their role in non-radiative carrier recombination that is harmful to the performance of potential optoelectronic and photonic devices based on these dilute nitrides

Deposition of titanium nitride layers by electric arc – Reactive plasma spraying method

International Nuclear Information System (INIS)

Şerban, Viorel-Aurel; Roşu, Radu Alexandru; Bucur, Alexandra Ioana; Pascu, Doru Romulus

2013-01-01

Highlights: ► Titanium nitride layers deposited by electric arc – reactive plasma spraying method. ► Deposition of titanium nitride layers on C45 steel at different spraying distances. ► Characterization of the coatings hardness as function of the spraying distances. ► Determination of the corrosion behavior of titanium nitride layers obtained. - Abstract: Titanium nitride (TiN) is a ceramic material which possesses high mechanical properties, being often used in order to cover cutting tools, thus increasing their lifetime, and also for covering components which are working in corrosive environments. The paper presents the experimental results on deposition of titanium nitride coatings by a new combined method (reactive plasma spraying and electric arc thermal spraying). In this way the advantages of each method in part are combined, obtaining improved quality coatings in the same time achieving high productivity. Commercially pure titanium wire and C45 steel as substrate were used for experiments. X-ray diffraction analysis shows that the deposited coatings are composed of titanium nitride (TiN, Ti 2 N) and small amounts of Ti 3 O. The microstructure of the deposited layers, investigated both by optical and scanning electron microscopy, shows that the coatings are dense, compact, without cracks and with low porosity. Vickers microhardness of the coatings presents maximum values of 912 HV0.1. The corrosion tests in 3%NaCl solution show that the deposited layers have a high corrosion resistance compared to unalloyed steel substrate.

High mobility two-dimensional electron gases in nitride heterostructures with high Al composition AlGaN alloy barriers

International Nuclear Information System (INIS)

Li Guowang; Cao Yu; Xing Huili Grace; Jena, Debdeep

2010-01-01

We report high-electron mobility nitride heterostructures with >70% Al composition AlGaN alloy barriers grown by molecular beam epitaxy. Direct growth of such AlGaN layers on GaN resulted in hexagonal trenches and a low mobility polarization-induced charge. By applying growth interruption at the heterojunction, the surface morphology improved dramatically and the room temperature two-dimensional electron gas (2DEG) mobility increased by an order of magnitude, exceeding 1300 cm 2 /V s. The 2DEG density was tunable at 0.4-3.7x10 13 /cm 2 by varying the total barrier thickness (t). Surface barrier heights of the heterostructures were extracted and exhibited dependence on t.

Physical and Tribological Properties of Nitrided AISI 316 Stainless Steel Balls

Directory of Open Access Journals (Sweden)

Yang Shicai

2016-01-01

Full Text Available AISI 316 austenitic stainless steel balls (diameters 5.0 and 12.0 mm, typical hardness 250 HV0.3 and flat samples (20×20×2.0 mm were nitrided by a pulsed glow discharge Ar/N2 plasma. Hardness of the ball surfaces was analysed using Vickers indentation. Thermal stability of the nitrided balls (diameter 12.0 mm was studied using a furnace to heat them in air for 8 hours at temperatures up to 700.0°C and then, after cooling to room temperature, the surface hardness of the heated balls was re-measured. Scanning electron microscopy and X-ray diffraction were used to study the microstructures, composition and phase formation of the nitrided sublayers. Unlubricated pin-on-disc wear testing was used to evaluate the wear resistance of nitrided stainless steel balls (5.0 mm diameter and the results were compared with similar testing on hardened Cr-Steel balls (5 mm diameter with hardness of about 650 HV0.3. All the test results indicated that the nitrided AISI 316 austenitic stainless steel balls have advantages over the hardened Cr-Steel balls in terms of retaining high hardness after heat treatment and high resistance to sliding wear at room temperature under higher counterpart stress. These properties are expected to be beneficial for wide range of bearing applications.

Doping of III-nitride materials

OpenAIRE

Pampili, Pietro; Parbrook, Peter J.

2016-01-01

In this review paper we will report the current state of research regarding the doping of III-nitride materials and their alloys. GaN is a mature material with both n-type and p-type doping relatively well understood, and while n-GaN is easily achieved, p-type doping requires much more care. There are significant efforts to extend the composition range that can be controllably doped for AlGaInN alloys. This would allow application in shorter and longer wavelength optoelectronics as well as ex...

Electronic and optical properties of titanium nitride bulk and surfaces from first principles calculations

International Nuclear Information System (INIS)

Mehmood, Faisal; Pachter, Ruth; Murphy, Neil R.; Johnson, Walter E.

2015-01-01

Prediction of the frequency-dependent dielectric function of thin films poses computational challenges, and at the same time experimental characterization by spectroscopic ellipsometry remains difficult to interpret because of changes in stoichiometry and surface morphology, temperature, thickness of the film, or substrate. In this work, we report calculations for titanium nitride (TiN), a promising material for plasmonic applications because of less loss and other practical advantages compared to noble metals. We investigated structural, electronic, and optical properties of stoichiometric bulk TiN, as well as of the TiN(100), TiN(110), and TiN(111) outermost surfaces. Density functional theory (DFT) and many-body GW methods (Green's (G) function-based approximation with screened Coulomb interaction (W)) were used, ranging from G 0 W 0 , GW 0 to partially self-consistent sc-GW 0 , as well as the GW-BSE (Bethe-Salpeter equation) and time-dependent DFT (TDDFT) methods for prediction of the optical properties. Structural parameters and the band structure for bulk TiN were shown to be consistent with previous work. Calculated dielectric functions, plasma frequencies, reflectivity, and the electron energy loss spectrum demonstrated consistency with experiment at the GW 0 -BSE level. Deviations from experimental data are expected due to varying experimental conditions. Comparison of our results to spectroscopic ellipsometry data for realistic nanostructures has shown that although TDDFT may provide a computationally feasible level of theory in evaluation of the dielectric function, application is subject to validation with GW-BSE calculations

Characteristics of Au/PZT/TiO2/Nitride/Si structure capacitors with ICP nitride treatments

International Nuclear Information System (INIS)

Min, Hyung Seob; Kim, Tae Ho; Jeon, Chang Bae; Lee, Jae Gab; Kim, Ji Young

2002-01-01

In this study, the characteristics of PZT/TiO 2 ferroelectric gate stack capacitors with Inductively Coupled Plasma (ICP) nitridation were investigated for field effect transistor (FET)-type Ferroelectric Random Access Memory (FeRAM) applications. If a high accumulation capacitance is to be had, the ICP nitridation time needs to be optimized. While a short ICP treatment time results in thermal oxide growth due to lack of nitrogen, a long nitridation time causes a nitride layer which is too thick. Au/PZT(200 nm)/TiO 2 (40 nm)/Nitride/Si (MeFINS) structure capacitors show a memory window (ΔV) of 1.6 V under ±3-V operation while Au/PZT(200 nm)/TiO 2 (40 nm)/Si (MeFIS) capacitors without nitride treatment exhibit a small memory window of 0.6 V. At the same time, the capacitance of the MeFINS device is almost twice that of the MeFIS capacitor. This result implies that the ICP nitride treatment suppresses the formation of a low dielectric constant interfacial SiO x layer and alleviates the series capacitance problem

Laser sintered thin layer graphene and cubic boron nitride reinforced nickel matrix nanocomposites

Science.gov (United States)

Hu, Zengrong; Tong, Guoquan

2015-10-01

Laser sintered thin layer graphene (Gr)-cubic boron nitride (CBN)-Ni nanocomposites were fabricated on AISI 4140 plate substrate. The composites fabricating process, composites microstructure and mechanical properties were studied. Scanning electron microscopy (SEM), X-ray diffraction (XRD) and Raman spectroscopy were employed to study the micro structures and composition of the composites. XRD and Raman tests proved that graphene and CBN were dispersed in the nanocomposites. Nanoindentation test results indicate the significant improvements were achieved in the composites mechanical properties.

Properties of minor actinide nitrides

International Nuclear Information System (INIS)

Takano, Masahide; Itoh, Akinori; Akabori, Mitsuo; Arai, Yasuo; Minato, Kazuo

2004-01-01

The present status of the research on properties of minor actinide nitrides for the development of an advanced nuclear fuel cycle based on nitride fuel and pyrochemical reprocessing is described. Some thermal stabilities of Am-based nitrides such as AmN and (Am, Zr)N were mainly investigated. Stabilization effect of ZrN was cleary confirmed for the vaporization and hydrolytic behaviors. New experimental equipments for measuring thermal properties of minor actinide nitrides were also introduced. (author)

LETTER TO THE EDITOR: Fabrication and structure of an opal-gallium nitride nanocomposite

Science.gov (United States)

Davydov, V. Yu; Dunin-Borkovski, R. E.; Golubev, V. G.; Hutchison, J. L.; Kartenko, N. F.; Kurdyukov, D. A.; Pevtsov, A. B.; Sharenkova, N. V.; Sloan, J.; Sorokin, L. M.

2001-02-01

A three-dimensional gallium nitride lattice has been synthesized within the void sublattice of an artificial opal. The composite structure has been characterized using X-ray diffraction, Raman spectroscopy and transmission electron microscopy.

Effects of gaseous nitriding AISI4140 alloy steel on corrosion and hardness properties

Science.gov (United States)

Tamil Moli, L.; Wahab, N.; Gopinathan, M.; Karmegam, K.; Maniyarasi, M.

2016-10-01

Corrosion is one of the major problems in the industry especially on machinery since it weakens the structure of the machinery part and causes the mechanical failure. This will stop the production and increase the maintenance cost. In this study, the corrosion behaviour of gas nitriding on a screw press machine shaft made from AISI 4140 steel was investigated. Pitting corrosion was identified as a major cause of the shaft failure and this study was conducted to improve the corrosion resistance on the AISI 4140 alloy steel shaft by gas nitriding as a surface hardening treatment. Gas nitriding was performed with composition of 15% ammonia and 85% nitrogen at temperatures of 525 °C, 550 °C and 575 °C and with the soaking time of 30, 45 and 60 minutes, respectively. The samples were prepared as rectangular sized of 30mm x 12mm x 3mm for immersion testing. The results showed that corrosion rate of untreated samples was 77% higher compared to the nitrided samples. It was also found that hardness of the nitrided samples was higher than untreated sample. All in all, it can be concluded that gaseous nitriding can significantly improve the surface hardness and the corrosion resistance of the shaft made of AISI 4140 alloy steel, hence reduces the pitting that is the root cause of failure.

III-Nitride Membranes for Thermal Bio-Sensing and Solar Hydrogen Generation

KAUST Repository

Elafandy, Rami Tarek Mahmoud

2017-09-01

III-nitride nanostructures have generated tremendous scientific and technological interests in studying and engineering their low dimensional physics phenomena. Among these, 2D planar, free standing III-nitride nanomembranes are unrivalled in their scalability for high yield manufacture and can be mechanically manipulated. Due to the increase in their surface to volume ratio and the manifestation of quantum phenomena, these nanomembranes acquire unique physical properties. Furthermore, III-nitride membranes are chemically stable and biocompatible. Finally, nanomembranes are highly flexible and can follow curvilinear surfaces present in biological systems. However, being free-standing, requires especially new techniques for handling nanometers or micrometers thick membrane devices. Furthermore, effectively transferring these membrane devices to other substrates is not a direct process which requires the use of photoresists, solvents and/or elastomers. Finally, as the membranes are transferred, they need to be properly attached for subsequent device fabrications, which often includes spin coating and rinsing steps. These engineering complications have impeded the development of novel devices based on III-nitride membranes. In this thesis, we demonstrate the versatility of III-nitride membranes where we develop a thermal bio-sensor nanomembrane and solar energy photo-anode membrane. First, we present a novel preparation technique of nanomembranes with new characteristics; having no threading dislocation cores. We then perform optical characterization to reveal changes in their defect densities compared to the bulk crystal. We also study their mechanical properties where we successfully modulate their bandgap emission by 55 meV through various external compressive and tensile strain fields. Furthermore, we characterize the effect of phonon-boundary scattering on their thermal properties where we report a reduction of thermal conductivity from 130 to 9 W/mK. We employ

Development of III-nitride semiconductors by molecular beam epitaxy and cluster beam epitaxy and fabrication of LEDs based on indium gallium nitride MQWs

Science.gov (United States)

Chen, Tai-Chou Papo

The family of III-Nitrides (the binaries InN, GaN, AIN, and their alloys) is one of the most important classes of semiconductor materials. Of the three, Indium Nitride (InN) and Aluminum Nitride (AIN) have been investigated much less than Gallium Nitride (GaN). However, both of these materials are important for optoelectronic infrared and ultraviolet devices. In particular, since InN was found recently to be a narrow gap semiconductor (Eg=0.7eV), its development should extend the applications of nitride semiconductors to the spectral region appropriate to fiber optics communication and photovoltaic applications. Similarly, the development of AIN should lead to deep UV light emitting diodes (LEDs). The first part of this work addresses the evaluation of structural, optical and transport properties of InN films grown by two different deposition methods. In one method, active nitrogen was produced in the form of nitrogen radicals by a radio frequency (RF) plasma-assisted source. In an alternative method, active nitrogen was produced in the form of clusters containing approximately 2000 nitrogen molecules. These clusters were produced by adiabatic expansion from high stagnation pressure through a narrow nozzle into vacuum. The clusters were singly or doubly ionized with positive charge by electron impact and accelerated up to approximately 20 to 25 KV prior to their disintegration on the substrate. Due to the high local temperature produced during the impact of clusters with the substrate, this method is suitable for the deposition of InN at very low temperatures. The films are auto-doped n-type with carrier concentrations varying from 3 x 1018 to 1020 cm-3 and the electron effective mass of these films was determined to be 0.09m0. The majority of the AIN films was grown by the cluster beam epitaxy method and was doped n- and p- type by incorporating silicon (Si) and magnesium (Mg) during the film deposition. All films were grown under Al-rich conditions at relatively

Optical spectroscopic determination of human meniscus composition.

Science.gov (United States)

Ala-Myllymäki, Juho; Honkanen, Juuso T J; Töyräs, Juha; Afara, Isaac O

2016-02-01

This study investigates the correlation between the composition of human meniscus and its absorption spectrum in the visible (VIS) and near infrared (NIR) spectral range. Meniscus samples (n = 24) were obtained from nonarthritic knees of human cadavers with no history of joint diseases. Specimens (n = 72) were obtained from three distinct sections of the meniscus, namely; anterior, center, posterior. Absorption spectra were acquired from each specimen in the VIS and NIR spectral range (400-1,100 nm). Following spectroscopic probing, the specimens were subjected to biochemical analyses to determine the matrix composition, that is water, hydroxyproline, and uronic acid contents. Multivariate analytical techniques, including principal component analysis (PCA) and partial least squares (PLS) regression, were then used to investigate the correlation between the matrix composition and it spectral response. Our results indicate that the optical absorption of meniscus matrix is related to its composition, and this relationship is optimal in the NIR spectral range (750-1,100 nm). High correlations (R(2) (uronic)  = 86.9%, R(2) (water)  = 83.8%, R(2) (hydroxyproline)  = 81.7%, p meniscus composition, thus suggesting that spectral data in the NIR range can be utilized for estimating the matrix composition of human meniscus. In conclusion, optical spectroscopy, particularly in the NIR spectral range, is a potential method for evaluating the composition of human meniscus. This presents a promising technique for rapid and nondestructive evaluation of meniscus integrity in real-time during arthroscopic surgery. © 2015 Orthopaedic Research Society. Published by Wiley Periodicals, Inc.

Metal surface nitriding by laser induced plasma

Science.gov (United States)

Thomann, A. L.; Boulmer-Leborgne, C.; Andreazza-Vignolle, C.; Andreazza, P.; Hermann, J.; Blondiaux, G.

1996-10-01

We study a nitriding technique of metals by means of laser induced plasma. The synthesized layers are composed of a nitrogen concentration gradient over several μm depth, and are expected to be useful for tribological applications with no adhesion problem. The nitriding method is tested on the synthesis of titanium nitride which is a well-known compound, obtained at present by many deposition and diffusion techniques. In the method of interest, a laser beam is focused on a titanium target in a nitrogen atmosphere, leading to the creation of a plasma over the metal surface. In order to understand the layer formation, it is necessary to characterize the plasma as well as the surface that it has been in contact with. Progressive nitrogen incorporation in the titanium lattice and TiN synthesis are studied by characterizing samples prepared with increasing laser shot number (100-4000). The role of the laser wavelength is also inspected by comparing layers obtained with two kinds of pulsed lasers: a transversal-excited-atmospheric-pressure-CO2 laser (λ=10.6 μm) and a XeCl excimer laser (λ=308 nm). Simulations of the target temperature rise under laser irradiation are performed, which evidence differences in the initial laser/material interaction (material heated thickness, heating time duration, etc.) depending on the laser features (wavelength and pulse time duration). Results from plasma characterization also point out that the plasma composition and propagation mode depend on the laser wavelength. Correlation of these results with those obtained from layer analyses shows at first the important role played by the plasma in the nitrogen incorporation. Its presence is necessary and allows N2 dissociation and a better energy coupling with the target. Second, it appears that the nitrogen diffusion governs the nitriding process. The study of the metal nitriding efficiency, depending on the laser used, allows us to explain the differences observed in the layer features

Effect of component's geometry on the plasma nitriding behavior of AISI 4340 steel

International Nuclear Information System (INIS)

Asadi, Z. Soltani; Mahboubi, F.

2012-01-01

Highlights: → The thickness of the compound layer increases with increasing in temperature and groove width. → Surface layer at the remote regions from the edge is thinner than that of closer regions. → The hardness and the case depth of the nitrided layer increase with increasing the width of the groove. → Intensity of ε phase increases with increasing the width of the groove in both methods. → The ASPN specimens are covered by hexagonal particles and for the CPN by cauliflower shape nitrides. -- Abstract: The main aim of this work was to investigate the effect of the sample geometry on properties of the conventional plasma nitrided (CPN) and active screen plasma nitrided (ASPN) steel. Sample assemblies consisting of rectangular grooved steel blocks with different groove dimensions of 2, 4, 6, 8 and 10 (W) x 40 (H) x 20 (L) mm 3 and AISI 4340 steel plates (substrates) with dimensions of 10 x 40 x 60 mm 3 , to serve as groove cover, were prepared. The sample assemblies were conventional and active screen plasma nitrided under the gas mixture of 75%N 2 + 25%H 2 , at temperatures of 500 o C and 540 o C, pressure of 4 torr, for 5 h. Properties of the nitrided substrates were investigated by evaluating compound layer thickness, case depth, phase composition and hardness profile. Results of the experiments showed that the thickness of the compound layer, hardness and nitrided case depth increased with increasing the width of the groove for both methods. Also, in each sample, nitrogen atoms penetrated more deeply in the regions of the groove closer to the edge. Hallow cathode effect occurred at the sample with 2 mm width groove, in the CPN method, leading to the overheating of the sample. In ASPN, the hardness and the nitrided case depth are lower in comparison with CPN. The surface morphology of the CPN treated samples consists of cauliflower shape surface nitrides while the surface of the AS plasma nitrided samples are covered by the hexagonal particles with

Epitaxial ternary nitride thin films prepared by a chemical solution method

Energy Technology Data Exchange (ETDEWEB)

Luo, Hongmei [Los Alamos National Laboratory; Feldmann, David M [Los Alamos National Laboratory; Wang, Haiyan [TEXAS A& M; Bi, Zhenxing [TEXAS A& M

2008-01-01

It is indispensable to use thin films for many technological applications. This is the first report of epitaxial growth of ternary nitride AMN2 films. Epitaxial tetragonal SrTiN2 films have been successfully prepared by a chemical solution approach, polymer-assisted deposition. The structural, electrical, and optical properties of the films are also investigated.

Electro-optic and magneto-dielectric properties of multifunctional nitride and oxide materials

Science.gov (United States)

Dixit, Ambesh

Materials that simultaneously exhibit different physical properties provide a rich area of research leading to the development of new devices. For example, materials having a strong coupling between charge and spin degrees of freedom are essential to realizing a new class of devices referred to generally as spintronics. However, these multifunctional systems pose new scientific challenges in understanding the origin and mechanisms for cross-control of different functionalities. The core of this Ph.D. dissertation deals with multifunctional nitride and oxide compound semiconductors as well as multiferroic magnetic oxide systems by investigating structural, optical, electrical, magnetic, magnetodielectric and magnetoelectric properties. Thin films of InN nitride compound semiconductors and closely related alloys have been investigated to understand the effects of intrinsic defects on the materials properties while considering possible applications of highly degenerate InN thin films. As grown rf sputtered InN films on c-axis (0001) sapphire exhibit highly degenerate n-type behaviour due to oxygen defects introduced during growth. The effect of oxygen in InN matrix has been further investigated by intentionally adding oxygen into the films. These studies confirm that oxygen is one of the main sources of donor electrons in degenerate InN. Above some critical concentration of oxygen, secondary phases of In 2O3 and In-O-N complexes were formed. It was also possible to tune the carrier concentration to produce changes in the plasmon frequency, which varied from 0.45 eV to 0.8 eV. This characteristic energy scale suggests that these highly degenerate InN thin films could be used for thermophotovoltaic cells, optical filters, and other IR electro-optic applications. To probe the magnetism in transition metal doped InN system, In 0.98Cr0.02N and In0.95Cr0.05N thin films were fabricated. Our results suggest that these films develop ferromagnetic order above room temperature

The usage of optical fibers for damage detection in ballistic protection composite laminates

Directory of Open Access Journals (Sweden)

Živković Irena D.

2006-01-01

Full Text Available This paper describes the procedure of embedding fiber optic sensors in laminar thermoplastic composite material, as well as damage investigation after ballistic loading. Thermoplastic-reinforced composite materials were made for increased material damage resistance during ballistic loading. Damage inside the composite material was detected by observing the intensity drop of the light signal transmitted through the optical fibers. Experimental testing was carried out in order to observe and analyze the response of the material under various load conditions. Different types of Kevlar reinforced composite materials (thermoplastic, thermo reactive and thermoplastic with ceramic plate as the impact face were made. Material damage resistance during ballistic loading was investigated and compared. Specimens were tested under multiple load conditions. The opto-electronic part of the measurement system consists of two light-emitting diodes as light sources for the optical fibers, and two photo detectors for the light intensity measurement. The output signal was acquired from photo detectors by means of a data acquisition board and personal computer. The measurements showed an intensity drop of the transmitted light signal as a result of the applied loading on composite structure for all the optical fibers. All the diagrams show similar behavior of the light signal intensity. In fact, all of them may be divided into three zones: the zone of penetration of the first composite layer, the bullet traveling zone through the composite material till its final stop, and the material relaxation zone. The attenuation of the light signal intensity during impact is caused by the influence of the applied dynamic stress on the embedded optical fibers. The applied stress caused micro bending of the optical fiber, changes in the shape of the cross-section and the unequal changes of the indices of refraction of the core and cladding due to the stress-optic effect. The

Reassembling Solid Materials by Femtosecond Laser Ablation: Case of Aluminum Nitride

Science.gov (United States)

Kobayashi, Tohru; Matsuo, Yukari

2013-06-01

Through atomization and ionization, we could completely alter the composition of a nonconductive material, aluminum nitride, by femtosecond laser ablation. Preferential production of pure aluminum cluster cations Aln+ (n≤32) reflects not only their higher energetic stability compared with mixed clusters AlnNm+ but also completion of thermal relaxation in ablation plasma. Observation of metastable dissociation of Aln+ indicates that cluster cations have still enough internal energy for dissociation to occur, although the process is much slower than the cluster formation. Almost no cluster formation has been observed after nanosecond laser ablation of aluminum nitride, which highlights the distinct nature of ablation plasma produced by femtosecond laser ablation.

Investigation of Microstructure and Corrosion Propagation Behaviour of Nitrided Martensitic Stainless Steel Plates

Directory of Open Access Journals (Sweden)

Abidin Kamal Ariff Zainal

2014-07-01

Full Text Available Martensitic stainless steels are commonly used for fabricating components. For many applications, an increase in surface hardness and wear resistance can be beneficial to improve performance and extend service life. However, the improvement in hardness of martensitic steels is usually accompanied by a reduction in corrosion strength. The objective of this study is to investigate the effects of nitriding on AISI 420 martensitic stainless steel, in terms of microstructure and corrosion propagation behavior. The results indicate that the microstructure and phase composition as well as corrosion resistance were influenced by nitriding temperatures.

Damage and failure detection of composites using optical fiber vibration sensor

International Nuclear Information System (INIS)

Yang, Y. C.; Han, K. S.

2001-01-01

An intensity-based optical fiber vibration sensor is applied to detect and evaluate damages and fiber failure of composites. The optical fiber vibration sensor is constructed by placing two cleaved fiber end, one of which is cantilevered in a hollow glass tube. The movement of the cantilevered section lags behind the rest of the sensor in response to an applied vibration and the amount of light coupled between the two fibers is thereby modulated. Vibration characteristics of the optical fiber vibration sensor are investigated. Surface mounted optical fiber vibration sensor is used in tensile and indentation test. Experimental results show that the optical fiber sensor can detect damages and fiber failure of composites correctly

Brillouin optical correlation domain analysis in composite material beams

DEFF Research Database (Denmark)

Stern, Yonatan; London, Yosef; Preter, Eyal

2017-01-01

Structural health monitoring is a critical requirement in many composites. Numerous monitoring strategies rely on measurements of temperature or strain (or both), however these are often restricted to point-sensing or to the coverage of small areas. Spatially-continuous data can be obtained...... with optical fiber sensors. In this work, we report high-resolution distributed Brillouin sensing over standard fibers that are embedded in composite structures. A phase-coded, Brillouin optical correlation domain analysis (B-OCDA) protocol was employed, with spatial resolution of 2 cm and sensitivity of 1 °K...... or 20 micro-strain. A portable measurement setup was designed and assembled on the premises of a composite structures manufacturer. The setup was successfully utilized in several structural health monitoring scenarios: (a) monitoring the production and curing of a composite beam over 60 h; (b...

The effect of the boron source composition ratio on the adsorption performance of hexagonal boron nitride without a template

Energy Technology Data Exchange (ETDEWEB)

Zhang, Ning, E-mail: zhangning5832@163.com; Zhang, Tong; Kan, Hongmin; Wang, Xiaoyang; Long, Haibo; Cui, Xingyu

2015-08-01

An inexpensive boric acid (H{sub 3}BO{sub 3}) and borax (Na{sub 2}B{sub 4}O{sub 7}·10H{sub 2}O) mix was used as a source of boron with different composition ratios, and urea was used as a nitrogen source, in flowing ammonia atmosphere, for the preparation of hexagonal boron nitride (h-BN) with different micro-morphologies. Under a certain synthesis process, the effects of the molar ratio of borax and boric acid (or simply the boron source composition ratio for short) on the phase composition of the sample were studied; the work also explored the effect of boron source composition ratio on the micro-morphology, adsorption desorption isotherm and specific surface area of the h-BN powder. The main purpose of this work was to determine the optimum composition ratio of preparing spherical mesoporous h-BN and ensure that the micro-mechanism underpinning the formation of spherical mesoporous h-BN was understood. The results showed that at the optimum boron source composition ratio of 1:1, globular mesoporous spheres with a diameter of approximately 600–800 nm could be obtained with the highest pore volume and specific surface area (230.2 m{sup 2}/g). - Graphical abstract: Display Omitted - Highlights: • Spherical h-BN was synthesized by controlling the boron source composition ratio. • Without extra spherical template, solid Na{sub 2}O was equal to a spherical template. • At boron source composition ratio of 1:1, h-BN had best adsorption performance.

Three-Axis Distributed Fiber Optic Strain Measurement in 3D Woven Composite Structures

Science.gov (United States)

Castellucci, Matt; Klute, Sandra; Lally, Evan M.; Froggatt, Mark E.; Lowry, David

2013-01-01

Recent advancements in composite materials technologies have broken further from traditional designs and require advanced instrumentation and analysis capabilities. Success or failure is highly dependent on design analysis and manufacturing processes. By monitoring smart structures throughout manufacturing and service life, residual and operational stresses can be assessed and structural integrity maintained. Composite smart structures can be manufactured by integrating fiber optic sensors into existing composite materials processes such as ply layup, filament winding and three-dimensional weaving. In this work optical fiber was integrated into 3D woven composite parts at a commercial woven products manufacturing facility. The fiber was then used to monitor the structures during a VARTM manufacturing process, and subsequent static and dynamic testing. Low cost telecommunications-grade optical fiber acts as the sensor using a high resolution commercial Optical Frequency Domain Reflectometer (OFDR) system providing distributed strain measurement at spatial resolutions as low as 2mm. Strain measurements using the optical fiber sensors are correlated to resistive strain gage measurements during static structural loading. Keywords: fiber optic, distributed strain sensing, Rayleigh scatter, optical frequency domain reflectometry

Zr{sub 2}N{sub 2}Se. The first zirconium(IV) nitride selenide by the oxidation of zirconium(III) nitride with selenium

Energy Technology Data Exchange (ETDEWEB)

Lissner, Falk; Hack, Bettina; Schleid, Thomas [Institute for Inorganic Chemistry, University of Stuttgart (Germany); Lerch, Martin [Institute for Chemistry, Technical University of Berlin (Germany)

2012-08-15

The oxidation of zirconium(III) nitride (ZrN) with suitable amounts of selenium (Se) in the presence of sodium chloride (NaCl) as flux yields small yellow brownish platelets of the first zirconium(IV) nitride selenide with the composition Zr{sub 2}N{sub 2}Se. The new compound crystallizes in the hexagonal space group P6{sub 3}/mmc (no. 194) with a = 363.98(2) pm, c = 1316.41(9) pm (c/a = 3.617) and two formula units per unit cell. The crystallographically unique Zr{sup 4+} cations are surrounded by three selenide and four nitride anions in the shape of a capped trigonal antiprism. The Se{sup 2-} anions are coordinated by six Zr{sup 4+} cations as trigonal prism and the N{sup 3-} anions reside in tetrahedral surrounding of Zr{sup 4+} cations. These [NZr{sub 4}]{sup 13+} tetrahedra become interconnected via three edges each to form {sup 2}{sub ∞}{[(NZr_4_/_4)_2]"2"+} double layers parallel to the (001) plane, which are held together by monolayers of Se{sup 2-} anions. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Synthesis of metal free ultrathin graphitic carbon nitride sheet for photocatalytic dye degradation of Rhodamine B under visible light irradiation

Science.gov (United States)

Rahman, Shakeelur; Momin, Bilal; Higgins M., W.; Annapure, Uday S.; Jha, Neetu

2018-04-01

In recent times, low cost and metal free photocatalyts driven under visible light have attracted a lot of interest. One such photo catalyst researched extensively is bulk graphitic carbon nitride sheets. But the low surface area and weak mobility of photo generated electrons limits its photocatalytic performance in the visible light spectrum. Here we present the facile synthesis of ultrathin graphitic carbon nitride using a cost effective melamine precursor and its application in highly efficient photocatalytic dye degradation of Rhodamine B molecules. Compared to bulk graphitic carbon nitride, the synthesized ultrathin graphitic carbon nitride shows an increase in surface area, a a decrease in optical band gap and effective photogenerated charge separation which facilitates the harvest of visible light irradiation. Due to these optimal properties of ultrathin graphitic carbon nitride, it shows excellent photocatalytic activity with photocatalytic degradation of about 95% rhodamine B molecules in 1 hour.

Niobium nitride Josephson junctions with silicon and germanium barriers

International Nuclear Information System (INIS)

Cukauskas, E.J.; Carter, W.L.

1988-01-01

Niobium nitride based junctions with silicon, germanium, and composite silicon/germanium barriers were fabricated and characterized for several barrier compositions. The current-voltage characteristics were analyzed at several temperatures using the Simmons model and numerical integration of the WKB approximation for the average barrier height and effective thickness. The zero voltage conductance was measured from 1.5 K to 300 K and compared to the Mott hopping conductivity model and the Stratton tunneling temperature dependence. Conductivity followed Mott conductivity at temperatures above 60 K for junctions with less than 100 angstrom thick barriers

Boron nitride nanotubes as a reinforcement for brittle matrices

Czech Academy of Sciences Publication Activity Database

Tatarko, Peter; Grasso, S.; Porwal, H.; Saggar, Richa; Chlup, Zdeněk; Dlouhý, Ivo; Reece, M.J.

2014-01-01

Roč. 34, č. 14 (2014), s. 3339-3349 ISSN 0955-2219 R&D Projects: GA MŠk(CZ) ED1.1.00/02.0068 EU Projects: European Commission(XE) 264526 - GLACERCO Institutional support: RVO:68081723 Keywords : Amorphous borosilicate glass * Boron nitride nanotubes * Composite * Toughening mechanisms * Scratch resistance Subject RIV: JH - Ceramics, Fire-Resistant Materials and Glass Impact factor: 2.947, year: 2014

Facile fabrication of boron nitride nanosheets-amorphous carbon hybrid film for optoelectronic applications

KAUST Repository

Wan, Shanhong

2015-01-01

A novel boron nitride nanosheets (BNNSs)-amorphous carbon (a-C) hybrid film has been deposited successfully on silicon substrates by simultaneous electrochemical deposition, and showed a good integrity of this B-C-N composite film by the interfacial bonding. This synthesis can potentially provide the facile control of the B-C-N composite film for the potential optoelectronic devices. This journal is

Investigation of Emerging Materials for Optoelectronic Devices Based on III-Nitrides

KAUST Repository

Muhammed, Mufasila Mumthaz

2018-03-11

III-nitride direct bandgap semiconductors have attracted significant research interest due to their outstanding potential for modern optoelectronic and electronic applications. However, the high cost of III-nitride devices, along with low performance due to dislocation defects, remains an obstacle to their further improvement. In this dissertation, I present a significant enhancement of III-nitride devices based on emerging materials. A promising substrate, (-201)-oriented β-Ga2O3 with unique properties that combine high transparency and conductivity, is used for the first time in the development of high-quality vertical III-nitride devices, which can be cost-effective for large-scale production. In addition, hybridizing GaN with emerging materials, mainly perovskite, is shown to extend the functionality of III-nitride applications. As a part of this investigation, high-performance and high-responsivity fast perovskite/GaN-based UV-visible broadband photodetectors were developed. State-of-the-art GaN epilayers grown on (-201)-oriented β-Ga2O3 using AlN and GaN buffer layers are discussed, and their high optical quality without using growth enhancement techniques is demonstrated. In particular, a low lattice mismatch (⁓4.7%) between GaN and the substrate results in a low density of dislocations ~4.8Å~107 cm−2. To demonstrates the effect of (-201)-oriented β-Ga2O3 substrate on the quality of III-nitride alloys, high-quality ternary alloy InxGa1−xN film is studied, followed by the growth of high quality InxGa1−xN/GaN single and multiple quantum wells (QWs). The optical characterization and carrier dynamics by photoluminescence (PL) and time-resolved PL measurements were subsequently performed. Lastly, to investigate the performance of a vertical emitting device based on InGaN/GaN multiple QWs grown on (-201)-oriented β-Ga2O3 substrate, high-efficiency vertical-injection emitting device is developed and extensively investigated. The conductive nature of

2D metal carbides and nitrides (MXenes) for energy storage

KAUST Repository

Anasori, Babak; Lukatskaya, Maria R.; Gogotsi, Yury

2017-01-01

The family of 2D transition metal carbides, carbonitrides and nitrides (collectively referred to as MXenes) has expanded rapidly since the discovery of Ti3C2 in 2011. The materials reported so far always have surface terminations, such as hydroxyl, oxygen or fluorine, which impart hydrophilicity to their surfaces. About 20 different MXenes have been synthesized, and the structures and properties of dozens more have been theoretically predicted. The availability of solid solutions, the control of surface terminations and a recent discovery of multi-transition-metal layered MXenes offer the potential for synthesis of many new structures. The versatile chemistry of MXenes allows the tuning of properties for applications including energy storage, electromagnetic interference shielding, reinforcement for composites, water purification, gas- and biosensors, lubrication, and photo-, electro- and chemical catalysis. Attractive electronic, optical, plasmonic and thermoelectric properties have also been shown. In this Review, we present the synthesis, structure and properties of MXenes, as well as their energy storage and related applications, and an outlook for future research.

2D metal carbides and nitrides (MXenes) for energy storage

KAUST Repository

Anasori, Babak

2017-01-17

The family of 2D transition metal carbides, carbonitrides and nitrides (collectively referred to as MXenes) has expanded rapidly since the discovery of Ti3C2 in 2011. The materials reported so far always have surface terminations, such as hydroxyl, oxygen or fluorine, which impart hydrophilicity to their surfaces. About 20 different MXenes have been synthesized, and the structures and properties of dozens more have been theoretically predicted. The availability of solid solutions, the control of surface terminations and a recent discovery of multi-transition-metal layered MXenes offer the potential for synthesis of many new structures. The versatile chemistry of MXenes allows the tuning of properties for applications including energy storage, electromagnetic interference shielding, reinforcement for composites, water purification, gas- and biosensors, lubrication, and photo-, electro- and chemical catalysis. Attractive electronic, optical, plasmonic and thermoelectric properties have also been shown. In this Review, we present the synthesis, structure and properties of MXenes, as well as their energy storage and related applications, and an outlook for future research.

Optical properties of silver composite metamaterials

Energy Technology Data Exchange (ETDEWEB)

Orbons, S.M. [School of Physics, University of Melbourne, Victoria 3010 (Australia)]. E-mail: sorbons@ph.unimelb.edu.au; Freeman, D. [Centre for Ultrahigh-bandwidth Devices for Optical Systems, Laser Physics Centre, Australian National University, ACT 0200 (Australia); Luther-Davies, B. [Centre for Ultrahigh-bandwidth Devices for Optical Systems, Laser Physics Centre, Australian National University, ACT 0200 (Australia); Gibson, B.C. [Quantum Communications Victoria, School of Physics, University of Melbourne, Victoria 3010 (Australia); Huntington, S.T. [Quantum Communications Victoria, School of Physics, University of Melbourne, Victoria 3010 (Australia); Jamieson, D.N. [School of Physics, University of Melbourne, Victoria 3010 (Australia); Roberts, A. [School of Physics, University of Melbourne, Victoria 3010 (Australia)

2007-05-15

We present a computational and experimental study investigating the optical properties of nanoscale silver composite metamaterials fabricated by ion beam lithography. Both simulations and experimental results demonstrate high transmission efficiencies in the near infra-red through these devices. Implications for experimentally verifying the calculated near-field distributions of these materials are also discussed.

The influence of plasma nitriding on the fatigue behavior of austenitic stainless steel types AISI 316 and AISI 304

International Nuclear Information System (INIS)

Varavallo, Rogerio; Manfrinato, Marcos Dorigao; Rossino, Luciana Sgarbi; Spinelli, Dirceu; Riofano, Rosamel Melita Munoz

2010-01-01

The plasma nitriding process has been used as an efficient method to optimize the surface properties of steel and alloy in order to increase their wear, fatigue and corrosion resistance. This paper reports on a study of the composition and influence of the nitrided layer on the high-cycle fatigue properties of the AISI 316 and 304 type austenitic stainless steels. Test specimens of AISI 316 and 304 steel were nitrided at 400 deg C for 6 hours under a pressure of 4.5 mbar, using a gas mixture of 80% volume of H 2 and 20% volume of N 2 . The rotary fatigue limit of both nitrided and non-nitrided steels was determined, and the effect of the treatment on the fatigue limit of the two steels was evaluated. The mechanical properties of the materials were evaluated based on tensile tests, and the nitrided layer was characterized by microhardness tests, scanning electron microscopy and X-ray diffraction. The resulting nitride layer showed high hardness and mechanical strength, increasing the fatigue limit of the nitrided material in comparison with the non-nitrided one. The fatigue limit of the 316 steel increased from 400 MPa to 510 MPa in response to nitriding, while that of the 304 steel increased from 380 MPa to 560 MPa. One of the contributing factors of this increase was the introduction of residual compressive stresses during the surface hardening process, which reduce the onset of crack formation underneath the nitride layer. (author)

Structure analysis of aluminium silicon manganese nitride precipitates formed in grain-oriented electrical steels

International Nuclear Information System (INIS)

Bernier, Nicolas; Xhoffer, Chris; Van De Putte, Tom; Galceran, Montserrat; Godet, Stéphane

2013-01-01

We report a detailed structural and chemical characterisation of aluminium silicon manganese nitrides that act as grain growth inhibitors in industrially processed grain-oriented (GO) electrical steels. The compounds are characterised using energy dispersive X-ray spectrometry (EDX) and energy filtered transmission electron microscopy (EFTEM), while their crystal structures are analysed using X-ray diffraction (XRD) and TEM in electron diffraction (ED), dark-field, high-resolution and automated crystallographic orientation mapping (ACOM) modes. The chemical bonding character is determined using electron energy loss spectroscopy (EELS). Despite the wide variation in composition, all the precipitates exhibit a hexagonal close-packed (h.c.p.) crystal structure and lattice parameters of aluminium nitride. The EDX measurement of ∼ 900 stoichiometrically different precipitates indicates intermediate structures between pure aluminium nitride and pure silicon manganese nitride, with a constant Si/Mn atomic ratio of ∼ 4. It is demonstrated that aluminium and silicon are interchangeably precipitated with the same local arrangement, while both Mn 2+ and Mn 3+ are incorporated in the h.c.p. silicon nitride interstitial sites. The oxidation of the silicon manganese nitrides most likely originates from the incorporation of oxygen during the decarburisation annealing process, thus creating extended planar defects such as stacking faults and inversion domain boundaries. The chemical composition of the inhibitors may be written as (AlN) x (SiMn 0.25 N y O z ) 1−x with x ranging from 0 to 1. - Highlights: • We study the structure of (Al,Si,Mn)N inhibitors in grain oriented electrical steels. • Inhibitors have the hexagonal close-packed symmetry with lattice parameters of AlN. • Inhibitors are intermediate structures between pure AlN and (Si,Mn)N with Si/Mn ∼ 4. • Al and Si share the same local arrangement; Mn is incorporated in both Mn 2+ and Mn 3+ . • Oxygen

Reactive radio frequency sputtering deposition and characterization of zinc nitride and oxynitride thin films

International Nuclear Information System (INIS)

Jiang, Nanke; Georgiev, Daniel G.; Wen, Ting; Jayatissa, Ahalapitiya H.

2012-01-01

Zinc nitride films were deposited on glass or silicon substrates by reactive magnetron radio frequency sputtering of zinc in either N 2 –Ar or N 2 –Ar–O 2 ambient. The effects of varying the nitrogen contents and the substrate temperature were investigated. X-ray diffraction data showed that the as-deposited films contain the zinc nitride cubic crystalline phase with a preferred orientation, and Raman scattering measurements revealed Zn-N related modes. According to energy-dispersive X-ray spectroscopy analysis, the as-deposited films were nitrogen-rich and contained only a small fraction of oxygen. Hall-effect measurements showed that p-type zinc nitride with carrier concentration of ∼ 10 19 cm −3 , mobility of ∼ 10 1 cm 2 /Vs, resistivity of ∼ 10 −2 Ω ∗ cm, was obtained. The photon energy dependence of optical transmittance suggested that the material has an indirect bandgap.

Surface enrichment with chrome and nitriding of IF steel under an abnormal glow discharge; Enriquecimento superficial com cromo e nitretacao do aco IF em descarga eletrica em regime anormal

Energy Technology Data Exchange (ETDEWEB)

Meira, S.R.; Borges, P.C., E-mail: sabrina.r.meira@gmail.com [Universidade Tecnologica Federal do Parana (UTFPR), Curitiba, PR (Brazil). Grupo de Materiais; Bernardelli, E.A. [Instituto Federal do Parana (IFPR), Paranagua, PR (Brazil). Laboratorio de Materiais

2014-07-01

The objective of this work is to evaluate the influence of surface enrichment of IF steel with chrome, and nitriding, the formation of the nitrided layer. Thus, IF steel samples were subjected to surface enrichment process, using 409 stainless steel as a target for sputtering, followed by plasma nitriding, both under a dc abnormal glow discharge. The enrichment treatment was operated at 1200 ° C for 3h. The nitriding treatment was operated at 510 ° C for 2 h. The influence of the treatments on the layers formed was studied through optical microscopy (OM), scan electron microscopy (SEM), X-ray diffraction (XRD) and Vickers microindentation. The results show that the enrichment is effective to enrich the IF surface, furthermore, improves the characteristics of nitriding, comparing nitriding samples to nitriding and enriched, was observed needles of nitrides, as well as a higher hardness, which is associated with the nitrides of chrome, on the nitriding and enriched samples. (author)

Growth of cubic GaN on a nitrided AlGaAs (001) substrate by using hydried vapor phase epitaxy

International Nuclear Information System (INIS)

Lee, H. J.; Yang, M.; Ahn, H. S.; Kim, K. H.; Yi, J. Y.; Jang, K. S.; Chang, J. H.; Kim, H. S.; Cho, C. R.; Kim, S. W.

2006-01-01

GaN layers were grown on AlGaAs (001) substrates by using hydride vapor phase epitaxy (HVPE). Growth parameters such as the nitridation temperature of the AlGaAs substrate and the growth rate of the GaN layer were found to be critical determinants for the growth of cubic GaN layer. Nitridation of the AlGaAs surface was performed in a NH 3 atmosphere at a temperature range of 550 - 700 .deg. C. GaN layers were grown at different growth rates on the nitrided AlGaAs substrates. The surface morphologies and the chemical constituents of the nitrided AlGaAs layers were characterized with scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). For the optical and the crystalline characterization of the GaN films, cathodoluminescence (CL) and X-ray diffraction (XRD) were carried out.

Structural materialization of stainless steel molds and dies by the low temperature high density plasma nitriding

Directory of Open Access Journals (Sweden)

Aizawa Tatsuhiko

2015-01-01

Full Text Available Various kinds of stainless steels have been widely utilized as a mold substrate material for injection molding and as a die for mold-stamping and direct stamping processes. Since they suffered from high temperature transients and thermal cycles in practice, they must be surface-treated by dry and wet coatings, or, by plasma nitriding. Martensitic stainless steel mold was first wet plated by the nickel phosphate (NiP, which was unstable at the high temperature stamping condition; and, was easy to crystalize or to fracture by itself. This issue of nuisance significantly lowered the productivity in fabrication of optical elements at present. In the present paper, the stainless steel mold was surface-treated by the low-temperature plasma nitriding. The nitrided layer by this surface modification had higher nitrogen solute content than 4 mass%; the maximum solid-solubility of nitrogen is usually 0.1 mass% in the equilibrium phase diagram. Owing to this solid-solution with high nitrogen concentration, the nitrided layer had high hardness of 1400 Hv within its thickness of 40 μm without any formation of nitrides after 14.4 ks plasma nitriding at 693 K. This nitrogen solid-solution treated stainless steel had thermal resistivity even at the mold-stamping conditions up to 900 K.

Effect of ion nitriding on the crystal structure of 3 mol% Y{sub 2}O{sub 3}-doped ZrO{sub 2} thin-films prepared by the sol-gel method

Energy Technology Data Exchange (ETDEWEB)

Ortiz, A.L. [Departamento de Electronica e Ingenieria Electromecanica, Escuela de Ingenierias Industriales, Universidad de Extremadura, Badajoz 06071 (Spain)]. E-mail: alortiz@unex.es; Diaz-Parralejo, A. [Departamento de Electronica e Ingenieria Electromecanica, Escuela de Ingenierias Industriales, Universidad de Extremadura, Badajoz 06071 (Spain); Borrero-Lopez, O. [Departamento de Electronica e Ingenieria Electromecanica, Escuela de Ingenierias Industriales, Universidad de Extremadura, Badajoz 06071 (Spain); Guiberteau, F. [Departamento de Electronica e Ingenieria Electromecanica, Escuela de Ingenierias Industriales, Universidad de Extremadura, Badajoz 06071 (Spain)

2006-06-30

We investigated the effect of ion nitriding on the crystal structure of 3 mol% Y{sub 2}O{sub 3}-doped ZrO{sub 2} (3YSZ) thin-films prepared by the sol-gel method. For this purpose, we used X-ray diffractometry to determine the crystalline phases, the lattice parameters, the crystal sizes, and the lattice microstrains, and glow discharge-optical emission spectroscopy to obtain the depth profiles of the elemental chemical composition. We found that nitrogen atoms substitute oxygen atoms in the 3YSZ crystal, thus leading to the formation of unsaturated-substitutional solid solutions with reduced lattice parameters and Zr{sub 0.94}Y{sub 0.06}O{sub 1.72}N{sub 0.17} stoichiometric formula. We also found that ion nitriding does not affect the grain size, but does generate lattice microstrains due to the increase in point defects in the crystalline lattice.

Surface modification of 17-4PH stainless steel by DC plasma nitriding and titanium nitride film duplex treatment

International Nuclear Information System (INIS)

Qi, F.; Leng, Y.X.; Huang, N.; Bai, B.; Zhang, P.Ch.

2007-01-01

17-4PH stainless steel was modified by direct current (DC) plasma nitriding and titanium nitride film duplex treatment in this study. The microstructure, wear resistance and corrosion resistance were characterized by X-ray diffraction (XRD), pin-on-disk tribological test and polarization experiment. The results revealed that the DC plasma nitriding pretreatment was in favor of improving properties of titanium nitride film. The corrosion resistance and wear resistance of duplex treatment specimen was more superior to that of only coated titanium nitride film

Brillouin Optical Correlation Domain Analysis in Composite Material Beams.

Science.gov (United States)

Stern, Yonatan; London, Yosef; Preter, Eyal; Antman, Yair; Diamandi, Hilel Hagai; Silbiger, Maayan; Adler, Gadi; Levenberg, Eyal; Shalev, Doron; Zadok, Avi

2017-10-02

Structural health monitoring is a critical requirement in many composites. Numerous monitoring strategies rely on measurements of temperature or strain (or both), however these are often restricted to point-sensing or to the coverage of small areas. Spatially-continuous data can be obtained with optical fiber sensors. In this work, we report high-resolution distributed Brillouin sensing over standard fibers that are embedded in composite structures. A phase-coded, Brillouin optical correlation domain analysis (B-OCDA) protocol was employed, with spatial resolution of 2 cm and sensitivity of 1 °K or 20 micro-strain. A portable measurement setup was designed and assembled on the premises of a composite structures manufacturer. The setup was successfully utilized in several structural health monitoring scenarios: (a) monitoring the production and curing of a composite beam over 60 h; (b) estimating the stiffness and Young's modulus of a composite beam; and (c) distributed strain measurements across the surfaces of a model wing of an unmanned aerial vehicle. The measurements are supported by the predictions of structural analysis calculations. The results illustrate the potential added values of high-resolution, distributed Brillouin sensing in the structural health monitoring of composites.

Brillouin Optical Correlation Domain Analysis in Composite Material Beams

Directory of Open Access Journals (Sweden)

Yonatan Stern

2017-10-01

Full Text Available Structural health monitoring is a critical requirement in many composites. Numerous monitoring strategies rely on measurements of temperature or strain (or both, however these are often restricted to point-sensing or to the coverage of small areas. Spatially-continuous data can be obtained with optical fiber sensors. In this work, we report high-resolution distributed Brillouin sensing over standard fibers that are embedded in composite structures. A phase-coded, Brillouin optical correlation domain analysis (B-OCDA protocol was employed, with spatial resolution of 2 cm and sensitivity of 1 °K or 20 micro-strain. A portable measurement setup was designed and assembled on the premises of a composite structures manufacturer. The setup was successfully utilized in several structural health monitoring scenarios: (a monitoring the production and curing of a composite beam over 60 h; (b estimating the stiffness and Young’s modulus of a composite beam; and (c distributed strain measurements across the surfaces of a model wing of an unmanned aerial vehicle. The measurements are supported by the predictions of structural analysis calculations. The results illustrate the potential added values of high-resolution, distributed Brillouin sensing in the structural health monitoring of composites.

One-step route to a hybrid TiO2/TixW1−xN nanocomposite by in situ selective carbothermal nitridation

Directory of Open Access Journals (Sweden)

Zoë Schnepp, Martin J Hollamby, Masahiko Tanaka, Yoshitaka Matsushita, Yoshio Katsuya and Yoshio Sakka

2012-01-01

Full Text Available Metal oxide/nitride nanocomposites have many existing and potential applications, e.g. in energy conversion or ammonia synthesis. Here, a hybrid oxide/nitride nanocomposite (anatase/TixW1−xN was synthesized by an ammonia-free sol–gel route. Synchrotron x-ray diffraction, complemented with electron microscopy and thermogravimetric analysis, was used to study the structure, composition and mechanism of formation of the nanocomposite. The nanocomposite contained nanoparticles (<5 nm diameter of two highly intermixed phases. This was found to arise from controlled nucleation and growth of a single oxide intermediate from the gel precursor, followed by phase separation and in situ selective carbothermal nitridation. Depending on the preparation conditions, the composition varied from anatase/TixW1−xN at low W content to an isostructural mixture of Ti-rich and W-rich TixW1−xN at high W content. In situ selective carbothermal nitridation offers a facile route to the synthesis of nitride-oxide nanocomposites. This conceptually new approach is a significant advance from previous methods, which generally require ammonolysis of a pre-synthesized oxide.

Single-layer graphene on silicon nitride micromembrane resonators

Energy Technology Data Exchange (ETDEWEB)

Schmid, Silvan; Guillermo Villanueva, Luis; Amato, Bartolo; Boisen, Anja [Department of Micro- and Nanotechnology, Technical University of Denmark, DTU Nanotech, Building 345 East, 2800 Kongens Lyngby (Denmark); Bagci, Tolga; Zeuthen, Emil; Sørensen, Anders S.; Usami, Koji; Polzik, Eugene S. [QUANTOP, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen (Denmark); Taylor, Jacob M. [Joint Quantum Institute/NIST, College Park, Maryland 20899 (United States); Herring, Patrick K.; Cassidy, Maja C. [School of Engineering and Applied Science, Harvard University, Cambridge, Massachusetts 02138 (United States); Marcus, Charles M. [Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen (Denmark); Cheol Shin, Yong; Kong, Jing [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

2014-02-07

Due to their low mass, high quality factor, and good optical properties, silicon nitride (SiN) micromembrane resonators are widely used in force and mass sensing applications, particularly in optomechanics. The metallization of such membranes would enable an electronic integration with the prospect for exciting new devices, such as optoelectromechanical transducers. Here, we add a single-layer graphene on SiN micromembranes and compare electromechanical coupling and mechanical properties to bare dielectric membranes and to membranes metallized with an aluminium layer. The electrostatic coupling of graphene covered membranes is found to be equal to a perfectly conductive membrane, without significantly adding mass, decreasing the superior mechanical quality factor or affecting the optical properties of pure SiN micromembranes. The concept of graphene-SiN resonators allows a broad range of new experiments both in applied physics and fundamental basic research, e.g., for the mechanical, electrical, or optical characterization of graphene.

Microstructure and corrosion behaviour of pulsed plasma-nitrided AISI H13 tool steel

International Nuclear Information System (INIS)

Basso, Rodrigo L.O.; Pastore, Heloise O.; Schmidt, Vanessa; Baumvol, Israel J.R.; Abarca, Silvia A.C.; Souza, Fernando S. de; Spinelli, Almir; Figueroa, Carlos A.; Giacomelli, Cristiano

2010-01-01

The effect of pulsed plasma nitriding temperature and time on the pitting corrosion behaviour of AISI H13 tool steel in 0.9% NaCl solutions was investigated by cyclic polarization. The pitting potential (E pit ) was found to be dependent on the composition, microstructure and morphology of the surface layers, whose properties were determined by X-ray diffraction and scanning electron microscopy techniques. The best corrosion protection was observed for samples nitrided at 480 o C and 520 o C. Under such experimental conditions the E pit -values shifted up to 1.25 V in the positive direction.

Nitriding of high speed steel

International Nuclear Information System (INIS)

Doyle, E.D.; Pagon, A.M.; Hubbard, P.; Dowey, S.J.; Pilkington, A.; McCulloch, D.G.; Latham, K.; DuPlessis, J.

2010-01-01

Current practice when nitriding HSS cutting tools is to avoid embrittlement of the cutting edge by limiting the depth of the diffusion zone. This is accomplished by reducing the nitriding time and temperature and eliminating any compound layer formation. However, in many applications there is an argument for generating a compound layer with beneficial tribological properties. In this investigation results are presented of a metallographic, XRD and XPS analysis of nitrided surface layers generated using active screen plasma nitriding and reactive vapour deposition using cathodic arc. These results are discussed in the context of built up edge formation observed while machining inside a scanning electron microscope. (author)

Tribological Characteristic of Titanium Alloy Surface Layers Produced by Diode Laser Gas Nitriding

Directory of Open Access Journals (Sweden)

Lisiecki A.

2016-06-01

Full Text Available In order to improve the tribological properties of titanium alloy Ti6Al4V composite surface layers Ti/TiN were produced during laser surface gas nitriding by means of a novel high power direct diode laser with unique characteristics of the laser beam and a rectangular beam spot. Microstructure, surface topography and microhardness distribution across the surface layers were analyzed. Ball-on-disk tests were performed to evaluate and compare the wear and friction characteristics of surface layers nitrided at different process parameters, base metal of titanium alloy Ti6Al4V and also the commercially pure titanium. Results showed that under dry sliding condition the commercially pure titanium samples have the highest coefficient of friction about 0.45, compared to 0.36 of titanium alloy Ti6Al4V and 0.1-0.13 in a case of the laser gas nitrided surface layers. The volume loss of Ti6Al4V samples under such conditions is twice lower than in a case of pure titanium. On the other hand the composite surface layer characterized by the highest wear resistance showed almost 21 times lower volume loss during the ball-on-disk test, compared to Ti6Al4V samples.

Corrosion resistant composite materials

International Nuclear Information System (INIS)

Ul'yanin, E.A.

1986-01-01

Foundations for corrosion-resistant composite materials design are considered with account of components compatibility. Fibrous and lamellar composites with metal matrix, dispersion-hardened steels and alloys, refractory metal carbides-, borides-, nitrides-, silicides-based composites are described. Cermet compositions and fields of their application, such as protective coatings for operation in agressive media at high temperatures, are presented

Hydrogenated dilute nitride semiconductors theory, properties, and applications

CERN Document Server

Ciatto, Gianluca

2015-01-01

""The electrical and optical properties of the technologically and scientifically important dilute nitride semiconductors are strongly influenced by the introduction of atomic hydrogen. This volume is an excellent summary and resource for the most recent understanding of experimental results and state-of-the-art theoretical studies of the formation, reversibility, and microscopic structure of nitrogen-hydrogen complexes in these materials. The book details how a wide variety of experimental techniques have provided a detailed understanding of the role of hydrogen. It is the premier sourc

Single-layer graphene on silicon nitride micromembrane resonators

DEFF Research Database (Denmark)

Schmid, Silvan; Bagci, Tolga; Zeuthen, Emil

2014-01-01

Due to their low mass, high quality factor, and good optical properties, silicon nitride (SiN) micromembrane resonators are widely used in force and mass sensing applications, particularly in optomechanics. The metallization of such membranes would enable an electronic integration with the prospect...... for exciting new devices, such as optoelectromechanical transducers. Here, we add a single-layer graphene on SiN micromembranes and compare electromechanical coupling and mechanical properties to bare dielectric membranes and to membranes metallized with an aluminium layer. The electrostatic coupling...

Solvothermal synthesis: a new route for preparing nitrides

CERN Document Server

Demazeau, G; Denis, A; Largeteau, A

2002-01-01

Solvothermal synthesis appears to be an interesting route for preparing nitrides such as gallium nitride and aluminium nitride, using ammonia as solvent. A nitriding additive is used to perform the reaction and, in the case of gallium nitride, is encapsulated by melt gallium. The syntheses are performed in the temperature range 400-800 deg. C and in the pressure range 100-200 MPa. The synthesized powders are characterized by x-ray diffraction and scanning electron microscopy. Finely divided gallium nitride GaN and aluminium nitride AlN, both with wurtzite-type structure, can be obtained by this route.

Characterizing AISI 1045 steel surface duplex-treated by alternating current field enhanced pack aluminizing and nitriding

Science.gov (United States)

Xie, Fei; Zhang, Ge; Pan, Jianwei

2018-02-01

Thin cases and long treating time are shortcomings of conventional duplex treatment of aluminizing followed by nitriding (DTAN). Alternating current field (ACF) enhanced DTAN was carried out on AISI 1045 steel by applying an ACF to treated samples and treating agents with a pair of electrodes for overcoming those shortcomings. By investigating cases' structures, phases, composition and hardness distributions of differently treated samples, preliminary studies were made on characterizations of the ACF enhanced duplex treatment to AISI 1045 steel. The results show that, with the help of the ACF, the surface Al-rich phase Al5Fe2 formed in conventional pack aluminizing can be easily avoided and the aluminizing process is dramatically promoted. The aluminizing case can be nitrided either with conventional pack nitriding or ACF enhanced pack nitriding. By applying ACF to pack nitriding, the diffusion of nitrogen into the aluminizing case is promoted. AlN, Fe2∼3N and solid solution of N in iron are efficiently formed as a result of reactions of N with the aluminizing case. A duplex treated case with an effective thickness of more than 170 μm can be obtained by the alternating current field enhanced 4 h pack aluminizing plus 4 h pack nitriding.

Germanium nitride and oxynitride films for surface passivation of Ge radiation detectors

Energy Technology Data Exchange (ETDEWEB)

Maggioni, G., E-mail: maggioni@lnl.infn.it [Dipartimento di Fisica e Astronomia G. Galilei, Università di Padova, Via Marzolo 8, I-35131 Padova (Italy); Laboratori Nazionali di Legnaro, Istituto Nazionale di Fisica Nucleare, Viale dell’Universita’2, I-35020 Legnaro, Padova (Italy); Carturan, S. [Dipartimento di Fisica e Astronomia G. Galilei, Università di Padova, Via Marzolo 8, I-35131 Padova (Italy); Laboratori Nazionali di Legnaro, Istituto Nazionale di Fisica Nucleare, Viale dell’Universita’2, I-35020 Legnaro, Padova (Italy); Fiorese, L. [Laboratori Nazionali di Legnaro, Istituto Nazionale di Fisica Nucleare, Viale dell’Universita’2, I-35020 Legnaro, Padova (Italy); Dipartimento di Ingegneria dei Materiali e delle Tecnologie Industriali, Università di Trento, Via Mesiano 77, I-38050 Povo, Trento (Italy); Pinto, N.; Caproli, F. [Scuola di Scienze e Tecnologie, Sezione di Fisica, Università di Camerino, Via Madonna delle Carceri 9, Camerino (Italy); INFN, Sezione di Perugia, Perugia (Italy); Napoli, D.R. [Laboratori Nazionali di Legnaro, Istituto Nazionale di Fisica Nucleare, Viale dell’Universita’2, I-35020 Legnaro, Padova (Italy); Giarola, M.; Mariotto, G. [Dipartimento di Informatica—Università di Verona, Strada le Grazie 15, I-37134 Verona (Italy)

2017-01-30

Highlights: • A surface passivation method for HPGe radiation detectors is proposed. • Highly insulating GeNx- and GeOxNy-based layers are deposited at room temperature. • Deposition parameters affect composition and electrical properties of the layers. • The improved performance of a GeNx-coated HPGe diode is assessed. - Abstract: This work reports a detailed investigation of the properties of germanium nitride and oxynitride films to be applied as passivation layers to Ge radiation detectors. All the samples were deposited at room temperature by reactive RF magnetron sputtering. A strong correlation was found between the deposition parameters, such as deposition rate, substrate bias and atmosphere composition, and the oxygen and nitrogen content in the film matrix. We found that all the films were very poorly crystallized, consisting of very small Ge nitride and oxynitride nanocrystallites, and electrically insulating, with the resistivity changing from three to six orders of magnitude as a function of temperature. A preliminary test of these films as passivation layers was successfully performed by depositing a germanium nitride film on the intrinsic surface of a high-purity germanium (HPGe) diode and measuring the improved performance, in terms of leakage current, with respect to a reference passivated diode. All these interesting results allow us to envisage the application of this coating technology to the surface passivation of germanium-based radiation detectors.

Preparation of aluminum nitride-silicon carbide nanocomposite powder by the nitridation of aluminum silicon carbide

NARCIS (Netherlands)

Itatani, K.; Tsukamoto, R.; Delsing, A.C.A.; Hintzen, H.T.J.M.; Okada, I.

2002-01-01

Aluminum nitride (AlN)-silicon carbide (SiC) nanocomposite powders were prepared by the nitridation of aluminum-silicon carbide (Al4SiC4) with the specific surface area of 15.5 m2·g-1. The powders nitrided at and above 1400°C for 3 h contained the 2H-phases which consisted of AlN-rich and SiC-rich

Determination of lattice parameters, strain state and composition in semipolar III-nitrides using high resolution X-ray diffraction

Energy Technology Data Exchange (ETDEWEB)

Frentrup, Martin, E-mail: frentrup@physik.tu-berlin.de; Wernicke, Tim; Stellmach, Joachim; Kneissl, Michael [Institute of Solid State Physics, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin (Germany); Hatui, Nirupam; Bhattacharya, Arnab [Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India)

2013-12-07

In group-III-nitride heterostructures with semipolar or nonpolar crystal orientation, anisotropic lattice and thermal mismatch with the buffer or substrate lead to a complex distortion of the unit cells, e.g., by shearing of the lattice. This makes an accurate determination of lattice parameters, composition, and strain state under assumption of the hexagonal symmetry impossible. In this work, we present a procedure to accurately determine the lattice constants, strain state, and composition of semipolar heterostructures using high resolution X-ray diffraction. An analysis of the unit cell distortion shows that four independent lattice parameters are sufficient to describe this distortion. Assuming only small deviations from an ideal hexagonal structure, a linear expression for the interplanar distances d{sub hkl} is derived. It is used to determine the lattice parameters from high resolution X-ray diffraction 2ϑ-ω-scans of multiple on- and off-axis reflections via a weighted least-square fit. The strain and composition of ternary alloys are then evaluated by transforming the elastic parameters (using Hooke's law) from the natural crystal-fixed coordinate system to a layer-based system, given by the in-plane directions and the growth direction. We illustrate our procedure taking an example of (112{sup ¯}2) Al{sub κ}Ga{sub 1−κ}N epilayers with Al-contents over the entire composition range. We separately identify the in-plane and out-of-plane strains and discuss origins for the observed anisotropy.

Characterization of nitrides in an AISI 1010 steel; Caracterizacion de nitruros en un acero AISI 1010

Energy Technology Data Exchange (ETDEWEB)

Naquid G, C. [Instituto Nacional de Investigaciones Nucleares, Gerencia de Ciencia de Materiales, A.P. 18-1027, 11801 Mexico D.F. (Mexico)

1998-07-01

It was characterized the phase formation in the 1010 carbon steel nitrided in a plasma reactor nearby to eutectoid point. The microstructure and identification of these ones were evaluated by Optical microscopy (OM), Dilatometry and X-ray diffraction (XRD). (Author)

Production of AlN films: ion nitriding versus PVD coating

International Nuclear Information System (INIS)

Figueroa, U.; Salas, O.; Oseguera, J.

2004-01-01

The properties of AlN render this material very attractive for optical, electronic, and tribological applications; thus, a great interest exists for the production of thin AlN films on a variety of substrates. Many methods have been developed for this purpose where two processes stand out: plasma-assisted nitriding (PAN) and PVD coating. In the present paper, we compare the processing advantages and disadvantages of both methods in terms of the characteristics of the layers formed. AlN production by ion nitriding is very sensitive to presputtering cleaning and working pressure. Layers several micrometers thick can be produced in a few hours, which are formed by a fine mixture of Al+AlN. The surface morphology of the layers is rather rough. On the other hand, formation of PVD AlN coatings by DC reactive magnetron sputtering is more readily performed and better controlled than in ion nitriding. PVD results in macroscopically smoother AlN films and with similar thickness than the ion nitrided layers but produced in shorter processing times. The morphology of the PVD AlN layers is columnar with a fairly flat surface. Mechanisms for the formation of both types of AlN layers are proposed. One of the main differences between the two processes that explain the different AlN layer morphologies is the energy of the particles that arrive at the substrate. Considering only the processing advantages and the morphology of the AlN layers formed, PVD performs better than PAN processing

Influence of the ion nitriding temperature in the wear resistance of AISI H13 tool steel

International Nuclear Information System (INIS)

Heck, Stenio Cristaldo; Fernandes, Frederico Augusto Pires; Pereira, Ricardo Gomes; Casteletti, Luiz Carlos; Totten, George Edward

2010-01-01

The AISI H13 tool steel for hot work is the most used in its category. This steel was developed for injection molds and extrusion of hot metals as well as for conformation in hot presses and hammers. Plasma nitriding can improve significantly the surface properties of these steels, but the treatments conditions, such as temperature, must be optimized. In this work the influence of nitriding treatment temperature on the wear behavior of this steel is investigated. Samples of AISI H13 steel were quenched and tempered and then ion nitrided in the temperatures of 450, 550 and 650 deg C, at 4mbar pressure, during 5 hours. Samples of the treated material were characterized by optical microscopy, Vickers microhardness, x-ray analysis and wear tests. Plasma nitriding formed hard diffusion zones in all the treated samples. White layers were formed in samples treated at 550 deg C and 650 deg C. The treatment temperature of 450 deg C produced the highest hardness. Treatment temperature showed great influence in the diffusion layer thickness. X-ray analysis indicated the formation of the Fe_3N, Fe_4N and CrN phases for all temperatures, but with different concentrations. Nitriding increased significantly the AISI H13 wear resistance. (author)

Argon plasma treatment of silicon nitride (SiN) for improved antireflection coating on c-Si solar cells

Energy Technology Data Exchange (ETDEWEB)

Ghosh, Hemanta; Mitra, Suchismita; Saha, Hiranmay; Datta, Swapan Kumar; Banerjee, Chandan, E-mail: chandanbanerjee74@gmail.com

2017-01-15

Highlights: • Antireflection properties of argon plasma treated silicon nitride layer and its effect on crystalline silicon solar cell. • The reduction in reflection due to the formation of a silicon oxynitride/silicon nitride double layer. • EQE reveals a relative increase of 2.72% in J{sub sc} and 4.46% in conversion efficiency. - Abstract: Antireflection properties of argon plasma treated silicon nitride layer and its effect on crystalline silicon solar cell is presented here. Hydrogenated silicon nitride (a-SiN:H) layer has been deposited on a silicon substrate by Plasma Enhanced Chemical Vapour Deposition (PECVD) using a mixture of silane (SiH{sub 4}), ammonia (NH{sub 3}) and hydrogen (H{sub 2}) gases followed by a argon plasma treatment. Optical analysis reveals a significant reduction in reflectance after argon plasma treatment of silicon nitride layer. While FESEM shows nanostructures on the surface of the silicon nitride film, FTIR reveals a change in Si−N, Si−O and N−H bonds. On the other hand, ellipsometry shows the variation of refractive index and formation of double layer. Finally, a c-Si solar cell has been fabricated with the said anti-reflection coating. External quantum efficiency reveals a relative increase of 2.72% in the short circuit current density and 4.46% in conversion efficiency over a baseline efficiency of 16.58%.

Effect of hexagonal boron nitride and calcined petroleum coke on friction and wear behavior of phenolic resin-based friction composites

International Nuclear Information System (INIS)

Yi Gewen; Yan Fengyuan

2006-01-01

Calcined petroleum coke (CPC) and hexagonal boron nitride (h-BN) were used as the friction modifiers to improve the friction and wear properties of phenolic resin-based friction composites. Thus, the composites with different relative amounts of CPC and h-BN as the friction modifiers were prepared by compression molding. The hardness and bending strength of the friction composites were measured. The friction and wear behaviors of the composites sliding against cast iron at various temperatures were evaluated using a pin-on-disc test rig. The worn surfaces and wear debris of the friction composites were analyzed by means of scanning electron microscopy, energy dispersive spectroscopy, and X-ray photoelectron spectroscopy. It was found that the hybrid of the two friction modifiers was effective to significantly decrease the wear rate and stabilize the friction coefficient of the friction composites at various temperatures by forming a uniform lubricating and/or transferred film on the rubbing surfaces. The uniform and durable transfer films were also able to effectively diminish the direct contact between the friction composite and the cast iron counterpart and hence prevent severe wear of the latter as well. The effectiveness of the hybrid of CPC and h-BN in improving the friction and wear behavior of the phenolic resin-based friction modifiers could be attributed to the complementary action of the 'low temperature' lubricity of CPC and the 'high temperature' lubricity of h-BN. The optimum ratio of the two friction modifiers CPC and h-BN in the friction composites was suggested to be 1:1, and the corresponding friction composite showed the best friction-reducing and antiwear abilities

Plasma nitriding and simultaneous tempering of VF 800AT tool steel; Nitretacao por plasma com revenimento simultaneo do aco ferramenta VF 800AT

Energy Technology Data Exchange (ETDEWEB)

Prass, Andre Ricardo; Fontana, Luis Cesar; Recco, Abel Andre Candido, E-mail: prass.andrericardo@gmail.com, E-mail: luis.fontana@udesc.br, E-mail: abel.recco@udesc.br [Universidade do Estado de Santa Catarina (UDESC), Joinville, SC (Brazil)

2017-04-15

Plasma nitriding of tool steels improves the surface hardness due to formation of diffusion zone and/or compound layer. The process parameters such as temperature, gas composition and dwell time, allow to control the layer thickness, the microstructure, the crystalline phases and the type of layer (for example white layer or diffusion zone). This paper discusses an alternative procedure for the heat treatment of tempering and surface treatment, both in plasma or combining conventional heat treatment with subsequent plasma nitriding. Carrying out both treatments in plasma could enable reduction in manufacturing costs, lower energy consumption and less time for tools manufacturing. Samples of VF800AT steel were treated and characterized (at surface and core of samples) through the following technique: X-ray diffraction, optical microscopy, scanning electron microscopy, micro-hardness profile and Rockwell C measurement. Temperature measurements during the plasma treatment, show that arise thermal gradient between the surface and the core of the samples. In this work, it was observed that the surface was up to 7% hotter than the core of sample, during the plasma treatment with temperature of magnitude about 5 x 10{sup 2} °C. This thermal gradient seems inherent to the plasma process, so that it can produce different microstructure, hardness and crystalline phases between core and edge of samples. However, when two tempering operations are prior carried out in a muffle furnace and the third tempering treatment is subsequently carried out simultaneously with the plasma nitriding, it is observed that the microstructure, the crystalline phases, hardness and micro hardness (in both, edge and core) are similar to treatments done in conventional mode cycle (in muffle furnace) with subsequent plasma nitriding. (author)

Selective layer disordering in III-nitrides with a capping layer

Science.gov (United States)

Wierer, Jr., Jonathan J.; Allerman, Andrew A.

2016-06-14

Selective layer disordering in a doped III-nitride superlattice can be achieved by depositing a dielectric capping layer on a portion of the surface of the superlattice and annealing the superlattice to induce disorder of the layer interfaces under the uncapped portion and suppress disorder of the interfaces under the capped portion. The method can be used to create devices, such as optical waveguides, light-emitting diodes, photodetectors, solar cells, modulators, laser, and amplifiers.

Polymer/boron nitride nanocomposite materials for superior thermal transport performance.

Science.gov (United States)

Song, Wei-Li; Wang, Ping; Cao, Li; Anderson, Ankoma; Meziani, Mohammed J; Farr, Andrew J; Sun, Ya-Ping

2012-06-25

Boron nitride nanosheets were dispersed in polymers to give composite films with excellent thermal transport performances approaching the record values found in polymer/graphene nanocomposites. Similarly high performance at lower BN loadings was achieved by aligning the nanosheets in poly(vinyl alcohol) matrix by simple mechanical stretching (see picture). Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effects of hexagonal boron nitride and sintering temperature on mechanical and tribological properties of SS316L/h-BN composites

International Nuclear Information System (INIS)

Mahathanabodee, S.; Palathai, T.; Raadnui, S.; Tongsri, R.; Sombatsompop, N.

2013-01-01

Highlights: ► 20 vol% h-BN in stainless steel gave the lowest friction coefficient. ► Sintering temperature of 1200 °C was recommended for optimum friction coefficient. ► h-BN in stainless steel transformed to a boride liquid phase at 1250 °C. - Abstract: In this work, hexagonal boron nitride (h-BN)-embedded 316L stainless steel (SS316L/h-BN) composites were prepared using a conventional powder metallurgy process. In order to produce self-lubricating composites, various amounts of h-BN (10, 15 and 20 vol%) were incorporated. Effects of h-BN content and sintering temperature on the mechanical and tribological properties were of primary interest. The results suggested that an increase in h-BN content reduced the hardness of the composites, but that the hardness could be improved by increasing the sintering temperature. Addition of h-BN up to 20 vol% improved the friction coefficient of the composites. At a sintering temperature of 1250 °C, h-BN transformed into a boride liquid phase, which formed a eutectic during cooling and exhibited a deterioration effect on lubricating film formation of the h-BN, resulting in an increase in the friction coefficient of the composites. The specific wear rate was greatly reduced when the composites were sintered at 1200 °C. The lowest friction coefficient and specific wear rate in the composites could be found under the experimental conditions used in this work when using 20 vol% of h-BN at a sintering temperature of 1200 °C

Precipitation of metal nitrides from chloride melts

International Nuclear Information System (INIS)

Slater, S.A.; Miller, W.E.; Willit, J.L.

1996-01-01

Precipitation of actinides, lanthanides, and fission products as nitrides from molten chloride melts is being investigated for use as a final cleanup step in treating radioactive salt wastes generated by electrometallurgical processing of spent nuclear fuel. The radioactive components (eg, fission products) need to be removed to reduce the volume of high-level waste that requires disposal. To extract the fission products from the salt, a nitride precipitation process is being developed. The salt waste is first contacted with a molten metal; after equilibrium is reached, a nitride is added to the metal phase. The insoluble nitrides can be recovered and converted to a borosilicate glass after air oxidation. For a bench-scale experimental setup, a crucible was designed to contact the salt and metal phases. Solubility tests were performed with candidate nitrides and metal nitrides for which there are no solubility data. Experiments were performed to assess feasibility of precipitation of metal nitrides from chloride melts

Epitaxially-grown Gallium Nitride on Gallium Oxide substrate for photon pair generation in visible and telecomm wavelengths

KAUST Repository

Awan, Kashif M.

2016-08-11

Gallium Nitride (GaN), along with other III-Nitrides, is attractive for optoelectronic and electronic applications due to its wide direct energy bandgap, as well as high thermal stability. GaN is transparent over a wide wavelength range from infra-red to the visible band, which makes it suitable for lasers and LEDs. It is also expected to be a suitable candidate for integrated nonlinear photonic circuits for a wide range of applications from all-optical signal processing to quantum computing and on-chip wavelength conversion. Despite its abundant use in commercial devices, there is still need for suitable substrate materials to reduce high densities of threading dislocations (TDs) and other structural defects like stacking faults, and grain boundaries. All these defects degrade the optical quality of the epi-grown GaN layer as they act as non-radiative recombination centers.

Epitaxially-grown Gallium Nitride on Gallium Oxide substrate for photon pair generation in visible and telecomm wavelengths

KAUST Repository

Awan, Kashif M.; Dolgaleva, Ksenia; Mumthaz Muhammed, Mufasila; Roqan, Iman S.

2016-01-01

Gallium Nitride (GaN), along with other III-Nitrides, is attractive for optoelectronic and electronic applications due to its wide direct energy bandgap, as well as high thermal stability. GaN is transparent over a wide wavelength range from infra-red to the visible band, which makes it suitable for lasers and LEDs. It is also expected to be a suitable candidate for integrated nonlinear photonic circuits for a wide range of applications from all-optical signal processing to quantum computing and on-chip wavelength conversion. Despite its abundant use in commercial devices, there is still need for suitable substrate materials to reduce high densities of threading dislocations (TDs) and other structural defects like stacking faults, and grain boundaries. All these defects degrade the optical quality of the epi-grown GaN layer as they act as non-radiative recombination centers.

Analysis and Optimization of Thermodiffusion of an FBG Sensor in the Gas Nitriding Process

Directory of Open Access Journals (Sweden)

Tso-Sheng Hsieh

2016-12-01

Full Text Available In this paper, we report the numerical calculations for a thermo-optical model and the temperature sensitivity of a fiber Bragg grating (FBG sensor. The thermally-induced behaviors of a FBG sensor in the gas nitriding process were analyzed for temperatures ranging from 100–650 °C. The FBG consisted of properly chosen photosensitive fiber materials with an optimized thermo-optic coefficient. The experimental and optimized thermo-optic coefficient results were consistent in terms of temperature sensitivity. In these experiments, the temperature sensitivity of the FBG was found to be 11.9 pm/°C.

Aluminum nitride nanophotonic circuits operating at ultraviolet wavelengths

Energy Technology Data Exchange (ETDEWEB)

Stegmaier, M.; Ebert, J.; Pernice, W. H. P., E-mail: wolfram.pernice@kit.edu [Institute of Nanotechnology, Karlsruhe Institute of Technology, 76133 Karlsruhe (Germany); Meckbach, J. M.; Ilin, K.; Siegel, M. [Institute of Micro- und Nanoelectronic Systems, Karlsruhe Institute of Technology, 76187 Karlsruhe (Germany)

2014-03-03

Aluminum nitride (AlN) has recently emerged as a promising material for integrated photonics due to a large bandgap and attractive optical properties. Exploiting the wideband transparency, we demonstrate waveguiding in AlN-on-Insulator circuits from near-infrared to ultraviolet wavelengths using nanophotonic components with dimensions down to 40 nm. By measuring the propagation loss over a wide spectral range, we conclude that both scattering and absorption of AlN-intrinsic defects contribute to strong attenuation at short wavelengths, thus providing guidelines for future improvements in thin-film deposition and circuit fabrication.

Composition-controlled optical properties of colloidal CdSe quantum dots

Energy Technology Data Exchange (ETDEWEB)

Ayele, Delele Worku [Department of Chemical Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Department of Chemistry, Bahir Dar University, Bahir Dar (Ethiopia); Su, Wei-Nien, E-mail: wsu@mail.ntust.edu.tw [Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Chou, Hung-Lung [Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Pan, Chun-Jern [Department of Chemical Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Hwang, Bing-Joe, E-mail: bjh@mail.ntust.edu.tw [Department of Chemical Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan (China)

2014-12-15

Graphical abstract: - Highlights: • The surface of CdSe QDs are modified with cadmium followed by selenium. • The optical properties of CdSe QDs can be controlled by manipulating the composition. • Surface compositional change affects the surface defects or traps and recombination. • The surface trapping state can be controlled by tuning the surface composition. • A change in composition shows a change in the carrier life time. - Abstract: A strategy with respect to band gap engineering by controlling the composition of CdSe quantum dots (QDs) is reported. After the CdSe QDs are prepared, their compositions can be effectively manipulated from 1:1 (Cd:Se) CdSe QDs to Cd-rich and then to Se-rich QDs. To obtain Cd-rich CdSe QDs, Cd was deposited on equimolar CdSe QDs. Further deposition of Se on Cd-rich CdSe QDs produced Se-rich CdSe QDs. The compositions (Cd:Se) of the as-prepared CdSe quantum dots were acquired by Energy-dispersive X-ray spectroscopy (EDX). By changing the composition, the overall optical properties of the CdSe QDs can be manipulated. It was found that as the composition of the QDs changes from 1:1 (Cd:Se) CdSe to Cd-rich and then Se-rich CdSe, the band gap decreases along with a red shift of UV–vis absorption edges and photoluminescence (PL) peaks. The quantum yield also decreases with surface composition from 1:1 (Cd:Se) CdSe QDs to Cd-rich and then to Se-rich, largely due to the changes in the surface state. Because of the involvement of the surface defect or trapping state, the carrier life time increased from the 1:1 (Cd:Se) CdSe QDs to the Cd-rich to the Se-rich CdSe QDs. We have shown that the optical properties of CdSe QDs can be controlled by manipulating the composition of the surface atoms. This strategy can potentially be extended to other semiconductor nanocrystals to modify their properties.

Composition-controlled optical properties of colloidal CdSe quantum dots

International Nuclear Information System (INIS)

Ayele, Delele Worku; Su, Wei-Nien; Chou, Hung-Lung; Pan, Chun-Jern; Hwang, Bing-Joe

2014-01-01

Graphical abstract: - Highlights: • The surface of CdSe QDs are modified with cadmium followed by selenium. • The optical properties of CdSe QDs can be controlled by manipulating the composition. • Surface compositional change affects the surface defects or traps and recombination. • The surface trapping state can be controlled by tuning the surface composition. • A change in composition shows a change in the carrier life time. - Abstract: A strategy with respect to band gap engineering by controlling the composition of CdSe quantum dots (QDs) is reported. After the CdSe QDs are prepared, their compositions can be effectively manipulated from 1:1 (Cd:Se) CdSe QDs to Cd-rich and then to Se-rich QDs. To obtain Cd-rich CdSe QDs, Cd was deposited on equimolar CdSe QDs. Further deposition of Se on Cd-rich CdSe QDs produced Se-rich CdSe QDs. The compositions (Cd:Se) of the as-prepared CdSe quantum dots were acquired by Energy-dispersive X-ray spectroscopy (EDX). By changing the composition, the overall optical properties of the CdSe QDs can be manipulated. It was found that as the composition of the QDs changes from 1:1 (Cd:Se) CdSe to Cd-rich and then Se-rich CdSe, the band gap decreases along with a red shift of UV–vis absorption edges and photoluminescence (PL) peaks. The quantum yield also decreases with surface composition from 1:1 (Cd:Se) CdSe QDs to Cd-rich and then to Se-rich, largely due to the changes in the surface state. Because of the involvement of the surface defect or trapping state, the carrier life time increased from the 1:1 (Cd:Se) CdSe QDs to the Cd-rich to the Se-rich CdSe QDs. We have shown that the optical properties of CdSe QDs can be controlled by manipulating the composition of the surface atoms. This strategy can potentially be extended to other semiconductor nanocrystals to modify their properties

Alginic Acid-Aided Dispersion of Carbon Nanotubes, Graphene, and Boron Nitride Nanomaterials for Microbial Toxicity Testing.

Science.gov (United States)

Wang, Ying; Mortimer, Monika; Chang, Chong Hyun; Holden, Patricia A

2018-01-30

Robust evaluation of potential environmental and health risks of carbonaceous and boron nitride nanomaterials (NMs) is imperative. However, significant agglomeration of pristine carbonaceous and boron nitride NMs due to strong van der Waals forces renders them not suitable for direct toxicity testing in aqueous media. Here, the natural polysaccharide alginic acid (AA) was used as a nontoxic, environmentally relevant dispersant with defined composition to disperse seven types of carbonaceous and boron nitride NMs, including multiwall carbon nanotubes, graphene, boron nitride nanotubes, and hexagonal boron nitride flakes, with various physicochemical characteristics. AA's biocompatibility was confirmed by examining AA effects on viability and growth of two model microorganisms (the protozoan Tetrahymena thermophila and the bacterium Pseudomonas aeruginosa ). Using 400 mg·L -1 AA, comparably stable NM (200 mg·L -1 ) stock dispersions were obtained by 30-min probe ultrasonication. AA non-covalently interacted with NM surfaces and improved the dispersibility of NMs in water. The dispersion stability varied with NM morphology and size rather than chemistry. The optimized dispersion protocol established here can facilitate preparing homogeneous NM dispersions for reliable exposures during microbial toxicity testing, contributing to improved reproducibility of toxicity results.

Alginic Acid-Aided Dispersion of Carbon Nanotubes, Graphene, and Boron Nitride Nanomaterials for Microbial Toxicity Testing

Directory of Open Access Journals (Sweden)

Ying Wang

2018-01-01

Full Text Available Robust evaluation of potential environmental and health risks of carbonaceous and boron nitride nanomaterials (NMs is imperative. However, significant agglomeration of pristine carbonaceous and boron nitride NMs due to strong van der Waals forces renders them not suitable for direct toxicity testing in aqueous media. Here, the natural polysaccharide alginic acid (AA was used as a nontoxic, environmentally relevant dispersant with defined composition to disperse seven types of carbonaceous and boron nitride NMs, including multiwall carbon nanotubes, graphene, boron nitride nanotubes, and hexagonal boron nitride flakes, with various physicochemical characteristics. AA’s biocompatibility was confirmed by examining AA effects on viability and growth of two model microorganisms (the protozoan Tetrahymena thermophila and the bacterium Pseudomonas aeruginosa. Using 400 mg·L−1 AA, comparably stable NM (200 mg·L−1 stock dispersions were obtained by 30-min probe ultrasonication. AA non-covalently interacted with NM surfaces and improved the dispersibility of NMs in water. The dispersion stability varied with NM morphology and size rather than chemistry. The optimized dispersion protocol established here can facilitate preparing homogeneous NM dispersions for reliable exposures during microbial toxicity testing, contributing to improved reproducibility of toxicity results.

Effective Duration of Gas Nitriding Process on AISI 316L for the Formation of a Desired Thickness of Surface Nitrided Layer

Directory of Open Access Journals (Sweden)

Mahmoud Hassan R. S.

2014-07-01

Full Text Available High temperature gas nitriding performed on AISI 316L at the temperature of 1200°C. The microstructure of treated AISI 316L samples were observed to identify the formation of the microstructure of nitrided surface layer. The grain size of austenite tends to be enlarged when the nitriding time increases, but the austenite single phase structure is maintained even after the long-time solution nitriding. Using microhardness testing, the hardness values drop to the center of the samples. The increase in surface hardness is due to the high nitrogen concentration at or near the surface. At 245HV, the graph of the effective duration of nitriding process was plotted to achieve the maximum depth of nitrogen diffuse under the surface. Using Sigma Plot software best fit lines of the experimental result found and plotted to find out effective duration of nitriding equation as Y=1.9491(1-0.7947x, where Y is the thickness of nitrided layer below the surface and X is duration of nitriding process. Based on this equation, the duration of gas nitriding process can be estimated to produce desired thickness of nitrided layer.

Adsorption of sugars on Al- and Ga-doped boron nitride surfaces: A computational study

Energy Technology Data Exchange (ETDEWEB)

Darwish, Ahmed A. [Center for Nanotechnology, Zewail City of Science and Technology, Giza 12588 (Egypt); Department of Nuclear and Radiation Engineering, Faculty of Engineering, Alexandria University, Alexandria (Egypt); Fadlallah, Mohamed M. [Center for Fundamental Physics, Zewail City of Science and Technology, Giza 12588 (Egypt); Department of Physics, Faculty of Science, Benha University, Benha (Egypt); Badawi, Ashraf [Center for Nanotechnology, Zewail City of Science and Technology, Giza 12588 (Egypt); Maarouf, Ahmed A., E-mail: ahmed.maarouf@egnc.gov.eg [Center for Fundamental Physics, Zewail City of Science and Technology, Giza 12588 (Egypt); Egypt Nanotechnology Center & Department of Physics, Faculty of Science, Cairo University, Giza 12613 (Egypt)

2016-07-30

Highlights: • Doping boron nitride sheets with aluminum or gallium atoms significantly enhances their molecular adsorption properties. • Adsorption of glucose or glucosamine on Al- and Ga-doped boron nitride sheets changes the band gap. • Doping concentration changes the bad gap, but has a minor effect on the adsorption energy. - Abstract: Molecular adsorption on surfaces is a key element for many applications, including sensing and catalysis. Non-invasive sugar sensing has been an active area of research due to its importance to diabetes care. The adsorption of sugars on a template surface study is at the heart of matter. Here, we study doped hexagonal boron nitride sheets (h-BNNs) as adsorbing and sensing template for glucose and glucosamine. Using first principles calculations, we find that the adsorption of glucose and glucosamine on h-BNNs is significantly enhanced by the substitutional doping of the sheet with Al and Ga. Including long range van der Waals corrections gives adsorption energies of about 2 eV. In addition to the charge transfer occurring between glucose and the Al/Ga-doped BN sheets, the adsorption alters the size of the band gap, allowing for optical detection of adsorption. We also find that Al-doped boron nitride sheet is better than Ga-doped boron nitride sheet to enhance the adsorption energy of glucose and glucosamine. The results of our work can be potentially utilized when designing support templates for glucose and glucosamine.

Separation of zirconium--hafnium by nitride precipitation

International Nuclear Information System (INIS)

Anderson, R.N.; Parlee, N.A.

1977-01-01

A method is described for the separation of a light reactive metal (e.g., zirconium) from a heavy reactive metal (e.g., hafnium) by forming insoluble nitrides of the metals in a molten metal solvent (e.g., copper) inert to nitrogen and having a suitable density for the light metal nitride to form a separate phase in the upper portion of the solvent and for the heavy metal nitride to form a separate phase in the lower portion of the solvent. Nitriding is performed by maintaining a nitrogen-containing atmosphere over the bath. The light and heavy metals may be an oxide mixture and carbothermically reduced to metal form in the same bath used for nitriding. The nitrides are then separately removed and decomposed to form the desired separate metals. 16 claims, 1 figure

Nitride fuels irradiation performance data base

International Nuclear Information System (INIS)

Brozak, D.E.; Thomas, J.K.; Peddicord, K.L.

1987-01-01

An irradiation performance data base for nitride fuels has been developed from an extensive literature search and review that emphasized uranium nitride, but also included performance data for mixed nitrides [(U,Pu)N] and carbonitrides [(U,Pu)C,N] to increase the quantity and depth of pin data available. This work represents a very extensive effort to systematically collect and organize irradiation data for nitride-based fuels. The data base has many potential applications. First, it can facilitate parametric studies of nitride-based fuels to be performed using a wide range of pin designs and operating conditions. This should aid in the identification of important parameters and design requirements for multimegawatt and SP-100 fuel systems. Secondly, the data base can be used to evaluate fuel performance models. For detailed studies, it can serve as a guide to selecting a small group of pin specimens for extensive characterization. Finally, the data base will serve as an easily accessible and expandable source of irradiation performance information for nitride fuels

Study of optical properties of Erbium doped Tellurite glass-polymer composite

Science.gov (United States)

Sushama, D.

2014-10-01

Chalcogenide glasses have wide applications in optical device technology. But it has some disadvantages like thermal instability. Among them Tellurite glasses exhibits high thermal Stability. Doping of rare earth elements into the Tellurite glasses improve its optical properties. To improve its mechanical properties composites of this Tellurite glasses with polymer are prepared. Bulk samples of Er2O3 doped TeO2-WO3-La2O3 Tellurite glasses are prepared from high purity oxide mixtures, melting in an alumina crucible in air atmosphere. Composites of this Tellurite glasses with polymer are prepared by powder mixing method and the thin films of these composites are prepared using polymer press. Variations in band gap of these composites are studied from the UV/Vis/NIR absorption.

[Experimental study on the corrosion behavior of a type of oral near β-type titanium alloys modified with double glow plasma nitriding].

Science.gov (United States)

Wen, Ke; Li, Fenglan

2015-12-01

To study the electrochemical corrosion performance of a type of biomedical materials near beta titanium alloy(Ti-3Zr-2Sn-3Mo-25Nb, TLM) in artificial saliva before and after nitride changing, and to provide clinical basis for clinical application of titanium alloy TLM. The double glow plasma alloying technology was used to nitride the surface of titanium alloy TLM. The surface properties of the modified layer were observed and tested by optical microscope, scanning electron microscope, glow discharge spectrum analyzer, X-ray diffraction and micro hardness tester. Then, electrochemical measurement system was used to test and compare titanium alloy TLM's electrochemical corrosion in artificial saliva before and after its surface change. Finally, the surface morphology of the original titanium alloy and the modified layer was compared by scanning electron microscope. By the technology of double glow plasma nitriding, the surface of the titanium alloy TLM had been successfully nitrided with a modified layer of 4-5 µm in thickness, uniform and compact. Its main compositions were Ti and Ti(2)N. The Microhardness of modified layer also had been improved from (236.8 ± 5.4) to (871.8 ± 5.2) HV. The self-corrosion potential in electrochemical corrosion tests had been increased from -0.559 V to -0.540 V, while the self- corrosion current density had been reduced from 2.091 × 10(-7) A/cm(2) to 7.188 × 10(-8) A/cm(2). Besides, alternating-current impedance(AC Impedance) had also been increased. With the scanning electron microscope, it's obvious that the diameter of corrosion holes on modified layer were approximately 10 µm. As to the diameter and number of corrosion holes on modified layer, they had been decreased comparing with the original titanium alloy. The type of near beta titanium alloy TLM can construct a nitriding modified layer on its surface. Meanwhile, the performance of its anti- corrosion in artificial saliva has been improved, comparing to the original

Superstructure of self-aligned hexagonal GaN nanorods formed on nitrided Si(111) surface

Energy Technology Data Exchange (ETDEWEB)

Kumar, Praveen; Tuteja, Mohit; Kesaria, Manoj; Waghmare, U. V.; Shivaprasad, S. M. [Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore 560 064 (India)

2012-09-24

We present here the spontaneous formation of catalyst-free, self-aligned crystalline (wurtzite) nanorods on Si(111) surfaces modified by surface nitridation. Nanorods grown by molecular beam epitaxy on bare Si(111) and non-stoichiometric silicon nitride interface are found to be single crystalline but disoriented. Those grown on single crystalline Si{sub 3}N{sub 4} intermediate layer are highly dense c-oriented hexagonal shaped nanorods. The morphology and the self-assembly of the nanorods shows an ordered epitaxial hexagonal superstructure, suggesting that they are nucleated at screw dislocations at the interface and grow spirally in the c-direction. The aligned nanorod assembly shows high-quality structural and optical emission properties.

Titanium nitride plasma-chemical synthesis with titanium tetrachloride raw material in the DC plasma-arc reactor

Science.gov (United States)

Kirpichev, D. E.; Sinaiskiy, M. A.; Samokhin, A. V.; Alexeev, N. V.

2017-04-01

The possibility of plasmochemical synthesis of titanium nitride is demonstrated in the paper. Results of the thermodynamic analysis of TiCl4 - H2 - N2 system are presented; key parameters of TiN synthesis process are calculated. The influence of parameters of plasma-chemical titanium nitride synthesis process in the reactor with an arc plasmatron on characteristics on the produced powders is experimentally investigated. Structure, chemical composition and morphology dependencies on plasma jet enthalpy, stoichiometric excess of hydrogen and nitrogen in a plasma jet are determined.

Effect of temperature and pressure on wear properties of ion nitrided AISI 316 and 409 stainless steels

International Nuclear Information System (INIS)

Fernandes, Frederico Augusto Pires; Heck, Stenio Cristaldo; Pereira, Ricardo Gomes; Casteletti, Luiz Carlos; Nascente, Pedro Augusto de Paula

2010-01-01

Stainless steels are widely used in chemical and other industries due to their corrosion resistance property. However, because of their low hardness and wear properties, their applications are limited. Many attempts have been made to increase the surface hardness of these materials by using plasma techniques. Plasma nitriding is distinguished by its effectiveness, and for presenting a relatively low cost and being a clean process, producing hard surface layers on stainless steels. Aiming to verify the influence of the temperature and pressure on the modified resultant layers, samples of AISI 316 and 409 stainless steels were plasma nitrided in two different temperatures (450 and 500°C) and pressures of 400, 500, and 600Pa for 5h. After the nitriding treatment, the layers were analyzed by means of optical microscopy and wear tests. Wear tests were conducted in a fixed-ball micro-wear machine without lubrication. After the plasma nitriding treatment on AISI 316 and 409 samples, homogeneous and continuous layers were produced and their thicknesses increased as the temperature increased, and as the pressure decreased. The nitriding treatment on the AISI 316 steel sample resulted on the formation of expanded austenite layers at 450°C, and chromium nitrides (CrN and Cr_2N) phases at 500°C. The nitriding treatment on AISI 409 sample yielded the formation of similar layers for both treatment temperatures; these layers constituted mainly by chromium (Cr_2N) and iron (Fe_2N, Fe3_N, and Fe_4N) nitrides. After the nitriding treatment, the AISI 316 steel sample presented higher wear resistance for lower temperature and pressure values. The increase on layer fragility, for higher temperature and pressure values can be responsible for this inverse tendency. The wear resistance of the nitrided AISI 409 sample followed a logic tendency: the harder the layer the better the performance, i.e. the performance was improved with the increase in both the temperature and pressure

Thermal expansion of TRU nitride solid solutions as fuel materials for transmutation of minor actinides

International Nuclear Information System (INIS)

Takano, Masahide; Akabori, Mitsuo; Arai, Yasuo; Minato, Kazuo

2009-01-01

The lattice thermal expansion of the transuranium nitride solid solutions was measured to investigate the composition dependence. The single-phase solid solution samples of (Np 0.55 Am 0.45 )N, (Pu 0.59 Am 0.41 )N, (Np 0.21 Pu 0.52 Am 0.22 Cm 0.05 )N and (Pu 0.21 Am 0.18 Zr 0.61 )N were prepared by carbothermic nitridation of the respective transuranium dioxides and nitridation of Zr metal through hydride. The lattice parameters were measured by the high temperature X-ray diffraction method from room temperature up to 1478 K. The linear thermal expansion of each sample was determined as a function of temperature. The average thermal expansion coefficients over the temperature range of 293-1273 K for the solid solution samples were 10.1, 11.5, 10.8 and 8.8 x 10 -6 K -1 , respectively. Comparison of these values with those for the constituent nitrides showed that the average thermal expansion coefficients of the solid solution samples could be approximated by the linear mixture rule within the error of 2-3%.

Effect of the low temperature ion nitriding on the wear and corrosion resistance of 316L austenitic stainless steel biomaterials

International Nuclear Information System (INIS)

Sudjatmoko; Bambang Siswanto; Wirjoadi; Lely Susita RM

2012-01-01

In the present study has been completed done the ion nitriding process and characterization of the 316L SS samples. The ion nitriding process has been conducted on the samples for nitriding temperature variation of 350, 400, 450, 500, and 550 °C, the optimum nitrogen gas pressure of 1.8 mbar and optimum nitriding time of 3 hours. The micro-structure, elemental composition and the phase structure of the nitride layer formed on the surface of samples were observed using the techniques of SEM-EDAX and XRD, respectively. It is known that a thin layer of iron nitrides has been formed on the surface of the samples. Iron nitride layer has a phase structure including ε-Fe_2_-_3N, γ'-Fe_4N, CrN, Cr_2N and expanded austenite γN. The characterization results of the wear resistance of the 316L SS samples showed an increasing of about 2.6 times the wear resistance of standard samples after nitriding temperature of 350 °C. From the corrosion test by using the Hanks solution was obtained 29.87 mpy corrosion rate or the increasing of corrosion resistance of about 137%. Thus it can be seen that by using ion nitriding technique the iron nitride layer has been formed on the surface of the 316L SS samples, and they have an excellent properties of wear resistance and corrosion resistance, which were caused especially due to the formation of an expanded austenite γN. Properties of the high hardness and has the good corrosion resistance, especially due to the formation of iron nitride and expanded austenite phases γN at low temperature nitriding process. (author)

The Influence of Hot-Rolled Temperature on Plasma Nitriding Behavior of Iron-Based Alloys

Science.gov (United States)

El-Hossary, F. M.; Khalil, S. M.; Lotfy, Kh.; Kassem, M. A.

2009-07-01

Experiments were performed with an aim of studying the effect of hot-rolled temperature (600 and 900°C) on radio frequency (rf) plasma nitriding of Fe93Ni4Zr3 alloy. Nitriding was carried out for 10 min in a nitrogen atmosphere at a base pressure of 10-2 mbarr. Different continuous plasma processing powers of 300-550 W in steps 50 W or less were applied. Nitrided hot-rolled specimens were characterized by optical microscopy (OM), X-ray diffraction (XRD) and microhardness measurements. The results reveal that the surface of hot-rolled rf plasma nitrided specimens at 600°C is characterized with a fine microstructure as a result of the high nitrogen solubility and diffusivity. Moreover, the hot-rolled treated samples at 600°C exhibit higher microhardness value than the associated values of hot-rolled treated samples at 900°C. The enhancement of microhardness is due to precipitation and predominance of new phases ( γ and ɛ phases). Mainly, this conclusion has been attributed to the high defect densities and small grain sizes of the samples hot-rolled at 600°C. Generally, the refinement of grain size plays a dramatic role in improvement of mechanical properties of tested samples.

Microhardness and microplasticity of zirconium nitride

International Nuclear Information System (INIS)

Neshpor, V.S.; Eron'yan, M.A.; Petrov, A.N.; Kravchik, A.E.

1978-01-01

To experimentally check the concentration dependence of microhardness of 4 group nitrides, microhardness of zirconium nitride compact samples was measured. The samples were obtained either by bulk saturation of zirconium iodide plates or by chemical precipitation from gas. As nitrogen content decreased within the limits of homogeneity of zirconium nitride samples where the concentration of admixed oxygen was low, the microhardness grew from 1500+-100 kg/mm 2 for ZrNsub(1.0) to 27000+-100 kg/mm 2 for ZrNsub(0.78). Microplasticity of zirconium nitride (resistance to fracture) decreased, as the concentration of nitrogen vacancies was growing

III-nitride Photonic Integrated Circuit: Multi-section GaN Laser Diodes for Smart Lighting and Visible Light Communication

KAUST Repository

Shen, Chao

2017-01-01

The past decade witnessed the rapid development of III-nitride light-emitting diodes (LEDs) and laser diodes (LDs), for smart lighting, visible-light communication (VLC), optical storage, and internet-of-things. Recent studies suggested that the Ga

Chemical vapor deposition of refractory ternary nitrides for advanced diffusion barriers

Energy Technology Data Exchange (ETDEWEB)

Custer, Jonathan S.; Fleming, James G.; Roherty-Osmun, Elizabeth; Smith, Paul Martin

1998-09-22

Refractory ternary nitride films for diffusion barriers in microelectronics have been grown using chemical vapor deposition. Thin films of titanium-silicon-nitride, tungsten-boron-nitride, and tungsten-silicon-nitride of various compositions have been deposited on 150 mm Si wafers. The microstructure of the films are either fully amorphous for the tungsten based films, or nauocrystalline TiN in an amorphous matrix for titanium-silicon-nitride. All films exhibit step coverages suitable for use in future microelectronics generations. Selected films have been tested as diffusion barriers between copper and silicon, and generally perform extremely weH. These fiIms are promising candidates for advanced diffusion barriers for microelectronics applications. The manufacturing of silicon wafers into integrated circuits uses many different process and materials. The manufacturing process is usually divided into two parts: the front end of line (FEOL) and the back end of line (BEOL). In the FEOL the individual transistors that are the heart of an integrated circuit are made on the silicon wafer. The responsibility of the BEOL is to wire all the transistors together to make a complete circuit. The transistors are fabricated in the silicon itself. The wiring is made out of metal, currently aluminum and tungsten, insulated by silicon dioxide, see Figure 1. Unfortunately, silicon will diffuse into aluminum, causing aluminum spiking of junctions, killing transistors. Similarly, during chemical vapor deposition (CVD) of tungsten from ~fj, the reactivity of the fluorine can cause "worn-holes" in the silicon, also destroying transistors. The solution to these problems is a so-called diffusion barrier, which will allow current to pass from the transistors to the wiring, but will prevent reactions between silicon and the metal.

Polyethylene/boron-containing composites for radiation shielding

Energy Technology Data Exchange (ETDEWEB)

Shin, Ji Wook [Center for Materials Architecturing, Institute for Multi-Disciplinary Convergence of Materials, Korea Institute of Science and Technology (KIST), Seoul 136-791 (Korea, Republic of); Department of Chemical and Biological Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Lee, Jang-Woo; Yu, Seunggun; Baek, Bum Ki; Hong, Jun Pyo [Center for Materials Architecturing, Institute for Multi-Disciplinary Convergence of Materials, Korea Institute of Science and Technology (KIST), Seoul 136-791 (Korea, Republic of); Seo, Yongsok [School of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); Kim, Woo Nyon [Department of Chemical and Biological Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Hong, Soon Man, E-mail: smhong@kist.re.kr [Center for Materials Architecturing, Institute for Multi-Disciplinary Convergence of Materials, Korea Institute of Science and Technology (KIST), Seoul 136-791 (Korea, Republic of); Nanomaterials Science and Engineering, University of Science and Technology, Daejeon 305-350 (Korea, Republic of); Koo, Chong Min, E-mail: koo@kist.re.kr [Center for Materials Architecturing, Institute for Multi-Disciplinary Convergence of Materials, Korea Institute of Science and Technology (KIST), Seoul 136-791 (Korea, Republic of); Nanomaterials Science and Engineering, University of Science and Technology, Daejeon 305-350 (Korea, Republic of)

2014-06-01

Graphical abstract: - Highlights: • HDPE/silane-treated boron nitride (mBN) composites were fabricated. • The HDPE/mBN composites revealed a strong adhesion behavior at the interface of matrix/filler. • The HDPE/mBN composites show superior radiation shielding, thermoconductive and mechanical properties to the composites containing pristine BN and B{sub 4}C fillers. - Abstract: High-density polyethylene (HDPE) composites with modified boron nitride (mBN) fillers, functionalized with an organosilane, were fabricated through conventional melt-extrusion processing techniques. The properties and performances of these composites were compared with those of the composites containing pristine BN and boron carbide (B{sub 4}C) fillers. The silane functionalization of the BN fillers strongly improved the interfacial adhesion between the polymer matrix and the filler. As a result, the HDPE/mBN composites showed a better dispersion state of the filler particles, larger tensile modulus, greater effective thermal conductivity, and better neutron shielding property compared with the HDPE/BN and HDPE/B{sub 4}C composites.

Polyethylene/boron-containing composites for radiation shielding

International Nuclear Information System (INIS)

Shin, Ji Wook; Lee, Jang-Woo; Yu, Seunggun; Baek, Bum Ki; Hong, Jun Pyo; Seo, Yongsok; Kim, Woo Nyon; Hong, Soon Man; Koo, Chong Min

2014-01-01

Graphical abstract: - Highlights: • HDPE/silane-treated boron nitride (mBN) composites were fabricated. • The HDPE/mBN composites revealed a strong adhesion behavior at the interface of matrix/filler. • The HDPE/mBN composites show superior radiation shielding, thermoconductive and mechanical properties to the composites containing pristine BN and B 4 C fillers. - Abstract: High-density polyethylene (HDPE) composites with modified boron nitride (mBN) fillers, functionalized with an organosilane, were fabricated through conventional melt-extrusion processing techniques. The properties and performances of these composites were compared with those of the composites containing pristine BN and boron carbide (B 4 C) fillers. The silane functionalization of the BN fillers strongly improved the interfacial adhesion between the polymer matrix and the filler. As a result, the HDPE/mBN composites showed a better dispersion state of the filler particles, larger tensile modulus, greater effective thermal conductivity, and better neutron shielding property compared with the HDPE/BN and HDPE/B 4 C composites

Silicon nitride gradient film as the underlayer of ultra-thin tetrahedral amorphous carbon overcoat for magnetic recording slider

Energy Technology Data Exchange (ETDEWEB)

Wang Guigen, E-mail: wanggghit@yahoo.com [Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055 (China); Kuang Xuping; Zhang Huayu; Zhu Can [Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055 (China); Han Jiecai [Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055 (China); Center for Composite Materials, Harbin Institute of Technology, Harbin 150080 (China); Zuo Hongbo [Center for Composite Materials, Harbin Institute of Technology, Harbin 150080 (China); Ma Hongtao [SAE Technologies Development (Dongguan) Co., Ltd., Dongguan 523087 (China)

2011-12-15

Highlights: Black-Right-Pointing-Pointer The ultra-thin carbon films with different silicon nitride (Si-N) film underlayers were prepared. Black-Right-Pointing-Pointer It highlighted the influences of Si-N underlayers. Black-Right-Pointing-Pointer The carbon films with Si-N underlayers obtained by nitriding especially at the substrate bias of -150 V, can exhibit better corrosion protection properties - Abstract: There are higher technical requirements for protection overcoat of magnetic recording slider used in high-density storage fields for the future. In this study, silicon nitride (Si-N) composition-gradient films were firstly prepared by nitriding of silicon thin films pre-sputtered on silicon wafers and magnetic recording sliders, using microwave electron cyclotron resonance plasma source. The ultra-thin tetrahedral amorphous carbon films were then deposited on the Si-N films by filtered cathodic vacuum arc method. Compared with amorphous carbon overcoats with conventional silicon underlayers, the overcoats with Si-N underlayers obtained by plasma nitriding especially at the substrate bias of -150 V, can provide better corrosion protection for high-density magnetic recording sliders.

Silicon nitride gradient film as the underlayer of ultra-thin tetrahedral amorphous carbon overcoat for magnetic recording slider

International Nuclear Information System (INIS)

Wang Guigen; Kuang Xuping; Zhang Huayu; Zhu Can; Han Jiecai; Zuo Hongbo; Ma Hongtao

2011-01-01

Highlights: ► The ultra-thin carbon films with different silicon nitride (Si-N) film underlayers were prepared. ► It highlighted the influences of Si-N underlayers. ► The carbon films with Si-N underlayers obtained by nitriding especially at the substrate bias of −150 V, can exhibit better corrosion protection properties - Abstract: There are higher technical requirements for protection overcoat of magnetic recording slider used in high-density storage fields for the future. In this study, silicon nitride (Si-N) composition-gradient films were firstly prepared by nitriding of silicon thin films pre-sputtered on silicon wafers and magnetic recording sliders, using microwave electron cyclotron resonance plasma source. The ultra-thin tetrahedral amorphous carbon films were then deposited on the Si-N films by filtered cathodic vacuum arc method. Compared with amorphous carbon overcoats with conventional silicon underlayers, the overcoats with Si-N underlayers obtained by plasma nitriding especially at the substrate bias of −150 V, can provide better corrosion protection for high-density magnetic recording sliders.

Leachability of nitrided ilmenite in hydrochloric acid

OpenAIRE

Swanepoel, J.J.; van Vuuren, D.S.; Heydenrych, M.

2011-01-01

Titanium nitride in upgraded nitrided ilmenite (bulk of iron removed) can selectively be chlorinated to produce titanium tetrachloride. Except for iron, most other components present during this low temperature (ca. 200°C) chlorination reaction will not react with chlorine. It is therefore necessary to remove as much iron as possible from the nitrided ilmenite. Hydrochloric acid leaching is a possible process route to remove metallic iron from nitrided ilmenite without excessive dissolution o...

3D optical printing of piezoelectric nanoparticle-polymer composite materials.

Science.gov (United States)

Kim, Kanguk; Zhu, Wei; Qu, Xin; Aaronson, Chase; McCall, William R; Chen, Shaochen; Sirbuly, Donald J

2014-10-28

Here we demonstrate that efficient piezoelectric nanoparticle-polymer composite materials can be optically printed into three-dimensional (3D) microstructures using digital projection printing. Piezoelectric polymers were fabricated by incorporating barium titanate (BaTiO3, BTO) nanoparticles into photoliable polymer solutions such as polyethylene glycol diacrylate and exposing to digital optical masks that could be dynamically altered to generate user-defined 3D microstructures. To enhance the mechanical-to-electrical conversion efficiency of the composites, the BTO nanoparticles were chemically modified with acrylate surface groups, which formed direct covalent linkages with the polymer matrix under light exposure. The composites with a 10% mass loading of the chemically modified BTO nanoparticles showed piezoelectric coefficients (d(33)) of ∼ 40 pC/N, which were over 10 times larger than composites synthesized with unmodified BTO nanoparticles and over 2 times larger than composites containing unmodified BTO nanoparticles and carbon nanotubes to boost mechanical stress transfer efficiencies. These results not only provide a tool for fabricating 3D piezoelectric polymers but lay the groundwork for creating highly efficient piezoelectric polymer materials via nanointerfacial tuning.

Aluminum nitride integrated photonics platform for the ultraviolet to visible spectrum.

Science.gov (United States)

Lu, Tsung-Ju; Fanto, Michael; Choi, Hyeongrak; Thomas, Paul; Steidle, Jeffrey; Mouradian, Sara; Kong, Wei; Zhu, Di; Moon, Hyowon; Berggren, Karl; Kim, Jeehwan; Soltani, Mohammad; Preble, Stefan; Englund, Dirk

2018-04-30

We demonstrate a wide-bandgap semiconductor photonics platform based on nanocrystalline aluminum nitride (AlN) on sapphire. This photonics platform guides light at low loss from the ultraviolet (UV) to the visible spectrum. We measure ring resonators with intrinsic quality factor (Q) exceeding 170,000 at 638 nm and Q >20,000 down to 369.5 nm, which shows a promising path for low-loss integrated photonics in UV and visible spectrum. This platform opens up new possibilities in integrated quantum optics with trapped ions or atom-like color centers in solids, as well as classical applications including nonlinear optics and on-chip UV-spectroscopy.

Chemical-vapor-infiltrated silicon nitride, boron nitride, and silicon carbide matrix composites

International Nuclear Information System (INIS)

Ventri, R.D.; Galasso, F.S.

1990-01-01

This paper reports composites of carbon/chemical-vapor-deposited (CVD) Si 3 N 4 , carbon/CVD BN, mullite/CVD SiC, and SiC yarn/CVD SiC prepared to determine if there were inherent toughness in these systems. The matrices were deposited at high enough temperatures to ensure that they were crystalline, which should make them more stable at high temperatures. The fiber-matrix bonding in the C/Si 3 N 4 composite appeared to be too strong; the layers of BN in the matrix of the C/BN were too weakly bonded; and the mullite/SiC composite was not as tough as the SiC/SiC composites. Only the SiC yarn/CVD SiC composite exhibited both strength and toughness

Synthesis and Study of Optical Properties of Graphene/TiO2 Composites Using UV-VIS Spectroscopy

Science.gov (United States)

Rathod, P. B.; Waghuley, S. A.

2016-09-01

Graphene and TiO2 were synthesized using electrochemical exfoliation and co-precipitation methods, respectively. An ex situ approach was adopted for the graphene/TiO2 composites. The conformation of graphene in the TiO2 samples was examined through X-ray diffraction. Optical properties of the as-synthesised composites such as optical absorption, extinction coefficient, refractive index, real dielectric constant, imaginary dielectric constant, dissipation factor, and optical conductivity were measured using UV-Vis spectroscopy. The varying concentration of graphene in TiO2 affects the optical properties which appear different for 10 wt.% as compared to 5 wt.% graphene/ TiO2 composite. The composites exhibit an absorption peak at 300 nm with a decrease in band gap for 10 wt.% as compared to 5 wt.% graphene/TiO2 composite. The maximum optical conductivity for the graphene/TiO2 composite of 10 wt.% was found to be 1.86·10-2 Ω-1·m-1 at 300 nm.

Process monitoring of fibre reinforced composites using optical fibre sensors

Energy Technology Data Exchange (ETDEWEB)

Fernando, G.F.; Degamber, B.

2006-04-15

The deployment of optical fibre based sensor systems for process monitoring of advanced fibre reinforced organic matrix composites is reviewed. The focus is on thermosetting resins and the various optical and spectroscopy-based techniques that can be used to monitor the processing of these materials. Following brief consideration of the manufacturing methods commonly used in the production of thermoset based composites, a discussion is presented on sensor systems that can be used to facilitate real-time chemical process monitoring. Although the focus is on thermosets, the techniques described can be adapted for chemical monitoring of organic species in general. (author)

The influence of powder composition and sintering temperature on transformation kinetics, structure and mechanical properties of hot-pressed silicon nitride

International Nuclear Information System (INIS)

Knoch, H.; Ziegler, G.

1977-01-01

The strength at room temperature of hot-pressed silicon nitride is strongly dependent on the structure which in turn depends on powder composition and process parameters. Connections between production conditions (MgO content, pressing temperature, pressing time), structure (α/β content and morphology), and the properties at room temperature are discussed. The growth of oblong β grains - as a direct result of phase transition from α- to β-Si 3 N 4 - results in microstructural meshing and thus in a higher strength. Optimum mechanical properties are achieved after full phase transformation and with a microstructure as fine as possible. The direct connection between strength and transformed β fraction indicates a possible way for a relatively fast determination of optimum properties for a given initial powder. (orig.) [de

Implementation of Fiber Optic Sensing System on Sandwich Composite Cylinder Buckling Test

Science.gov (United States)

Pena, Francisco; Richards, W. Lance; Parker, Allen R.; Piazza, Anthony; Schultz, Marc R.; Rudd, Michelle T.; Gardner, Nathaniel W.; Hilburger, Mark W.

2018-01-01

The National Aeronautics and Space Administration (NASA) Engineering and Safety Center Shell Buckling Knockdown Factor Project is a multicenter project tasked with developing new analysis-based shell buckling design guidelines and design factors (i.e., knockdown factors) through high-fidelity buckling simulations and advanced test technologies. To validate these new buckling knockdown factors for future launch vehicles, the Shell Buckling Knockdown Factor Project is carrying out structural testing on a series of large-scale metallic and composite cylindrical shells at the NASA Marshall Space Flight Center (Marshall Space Flight Center, Alabama). A fiber optic sensor system was used to measure strain on a large-scale sandwich composite cylinder that was tested under multiple axial compressive loads up to more than 850,000 lb, and equivalent bending loads over 22 million in-lb. During the structural testing of the composite cylinder, strain data were collected from optical cables containing distributed fiber Bragg gratings using a custom fiber optic sensor system interrogator developed at the NASA Armstrong Flight Research Center. A total of 16 fiber-optic strands, each containing nearly 1,000 fiber Bragg gratings, measuring strain, were installed on the inner and outer cylinder surfaces to monitor the test article global structural response through high-density real-time and post test strain measurements. The distributed sensing system provided evidence of local epoxy failure at the attachment-ring-to-barrel interface that would not have been detected with conventional instrumentation. Results from the fiber optic sensor system were used to further refine and validate structural models for buckling of the large-scale composite structures. This paper discusses the techniques employed for real-time structural monitoring of the composite cylinder for structural load introduction and distributed bending-strain measurements over a large section of the cylinder by

Direct bonding of ALD Al₂O₃ to silicon nitride thin films

DEFF Research Database (Denmark)

Laganà, Simone; Mikkelsen, E. K.; Marie, Rodolphe

2017-01-01

microscopy (TEM) by improving low temperature annealing bonding strength when using atomic layer deposition of aluminum oxide. We have investigated and characterized bonding of Al2O3-SixNy (low stress silicon rich nitride) and Al2O3-Si3N4 (stoichiometric nitride) thin films annealed from room temperature up......O3 can be bonded to. Preliminary tests demonstrating a well-defined nanochannel system with-100 nm high channels successfully bonded and tests against leaks using optical fluorescence technique and transmission electron microscopy (TEM) characterization of liquid samples are also reported. Moreover...

Recombination and photosensitivity centres in boron nitride irradiated with ions

International Nuclear Information System (INIS)

Kabyshev, A.; Konusov, F.; Lopatin, V.

2001-01-01

The physical-chemical processes, taking place during the irradiation of dielectrics with ions distort the electron structure of the compounds and generate additional localise state in the forbidden zone (FZ). Consequently, the semiconductor layer with the specific surface density of σ ≥ 10 -10 S/ forms on the surface of the dielectric. In addition to his, the high concentration of the radiation-induced defects changes the optical and photoelectric properties of the materials and also the energy characteristics. Analysis of the photoelectric properties indicates that the recombination processes take part in electric transport. These processes restricted the increase of the photosensitivity and changing the kinetics of relaxation of photo conductivity (σ hv ). The practical application of the boron nitride (BN) the in the thermonuclear systems (for example, Ref. 7), stimulates research into the reasons for the deceleration of its properties under the effect of radiation of various types. The conductivity of non-irradiated boron nitride is of the electron-hole nature with a large fraction of the activation component in exchange of the charge carriers between the levels of the defects and the forbidden zones. On the basis of the correlation of the energy and kinetic parameters of luminescence and , the authors of Ref. 8 constructed a model of electron transfers accompanying the electric transport of the boron nitride. In addition to ion-thermal modification, the conductivity of boron nitride is also of the electron-hole nature and is accompanied by luminescence. Examination of the characteristics of luminescence may be useful for obtaining more information on the transport mechanism. In this work, in order to clarify the main parameters of the forbidden band, detailed investigations were carried out into the spectrum of the electronic states of radiation defects which determine the photoelectric and luminescence properties of the modified boron nitride. The

Band gap effects of hexagonal boron nitride using oxygen plasma

International Nuclear Information System (INIS)

Sevak Singh, Ram; Leong Chow, Wai; Yingjie Tay, Roland; Hon Tsang, Siu; Mallick, Govind; Tong Teo, Edwin Hang

2014-01-01

Tuning of band gap of hexagonal boron nitride (h-BN) has been a challenging problem due to its inherent chemical stability and inertness. In this work, we report the changes in band gaps in a few layers of chemical vapor deposition processed as-grown h-BN using a simple oxygen plasma treatment. Optical absorption spectra show a trend of band gap narrowing monotonically from 6 eV of pristine h-BN to 4.31 eV when exposed to oxygen plasma for 12 s. The narrowing of band gap causes the reduction in electrical resistance by ∼100 fold. The x-ray photoelectron spectroscopy results of plasma treated hexagonal boron nitride surface show the predominant doping of oxygen for the nitrogen vacancy. Energy sub-band formations inside the band gap of h-BN, due to the incorporation of oxygen dopants, cause a red shift in absorption edge corresponding to the band gap narrowing

Band gap effects of hexagonal boron nitride using oxygen plasma

Energy Technology Data Exchange (ETDEWEB)

Sevak Singh, Ram; Leong Chow, Wai [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Yingjie Tay, Roland [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Temasek Laboratories-NTU, 50 Nanyang Avenue, Singapore 639798 (Singapore); Hon Tsang, Siu [Temasek Laboratories-NTU, 50 Nanyang Avenue, Singapore 639798 (Singapore); Mallick, Govind [Temasek Laboratories-NTU, 50 Nanyang Avenue, Singapore 639798 (Singapore); Weapons and Materials Research Directorate, U.S. Army Research Laboratory, Aberdeen Proving Ground, Maryland 21005 (United States); Tong Teo, Edwin Hang, E-mail: htteo@ntu.edu.sg [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)

2014-04-21

Tuning of band gap of hexagonal boron nitride (h-BN) has been a challenging problem due to its inherent chemical stability and inertness. In this work, we report the changes in band gaps in a few layers of chemical vapor deposition processed as-grown h-BN using a simple oxygen plasma treatment. Optical absorption spectra show a trend of band gap narrowing monotonically from 6 eV of pristine h-BN to 4.31 eV when exposed to oxygen plasma for 12 s. The narrowing of band gap causes the reduction in electrical resistance by ∼100 fold. The x-ray photoelectron spectroscopy results of plasma treated hexagonal boron nitride surface show the predominant doping of oxygen for the nitrogen vacancy. Energy sub-band formations inside the band gap of h-BN, due to the incorporation of oxygen dopants, cause a red shift in absorption edge corresponding to the band gap narrowing.

Study of optical properties of Erbium doped Tellurite glass-polymer composite

Energy Technology Data Exchange (ETDEWEB)

Sushama, D., E-mail: sushasukumar@gmail.com [Research Awardee, LAMP, Dept. of Physics, Nit, Calicut, India and Dept. of Physics, M.S.M. College, Kayamkulam, Kerala (India)

2014-10-15

Chalcogenide glasses have wide applications in optical device technology. But it has some disadvantages like thermal instability. Among them Tellurite glasses exhibits high thermal Stability. Doping of rare earth elements into the Tellurite glasses improve its optical properties. To improve its mechanical properties composites of this Tellurite glasses with polymer are prepared. Bulk samples of Er{sub 2}O{sub 3} doped TeO{sub 2}‐WO{sub 3}‐La{sub 2}O{sub 3} Tellurite glasses are prepared from high purity oxide mixtures, melting in an alumina crucible in air atmosphere. Composites of this Tellurite glasses with polymer are prepared by powder mixing method and the thin films of these composites are prepared using polymer press. Variations in band gap of these composites are studied from the UV/Vis/NIR absorption.

Study of optical properties of Erbium doped Tellurite glass-polymer composite

International Nuclear Information System (INIS)

Sushama, D.

2014-01-01

Chalcogenide glasses have wide applications in optical device technology. But it has some disadvantages like thermal instability. Among them Tellurite glasses exhibits high thermal Stability. Doping of rare earth elements into the Tellurite glasses improve its optical properties. To improve its mechanical properties composites of this Tellurite glasses with polymer are prepared. Bulk samples of Er 2 O 3 doped TeO 2 ‐WO 3 ‐La 2 O 3 Tellurite glasses are prepared from high purity oxide mixtures, melting in an alumina crucible in air atmosphere. Composites of this Tellurite glasses with polymer are prepared by powder mixing method and the thin films of these composites are prepared using polymer press. Variations in band gap of these composites are studied from the UV/Vis/NIR absorption

Nitriding behavior of Ni and Ni-based binary alloys

Energy Technology Data Exchange (ETDEWEB)

Fonovic, Matej

2015-01-15

Gaseous nitriding is a prominent thermochemical surface treatment process which can improve various properties of metallic materials such as mechanical, tribological and/or corrosion properties. This process is predominantly performed by applying NH{sub 3}+H{sub 2} containing gas atmospheres serving as the nitrogen donating medium at temperatures between 673 K and 873 K (400 C and 600 C). NH{sub 3} decomposes at the surface of the metallic specimen and nitrogen diffuses into the surface adjacent region of the specimen whereas hydrogen remains in the gas atmosphere. One of the most important parameters characterizing a gaseous nitriding process is the so-called nitriding potential (r{sub N}) which determines the chemical potential of nitrogen provided by the gas phase. The nitriding potential is defined as r{sub N} = p{sub NH{sub 3}}/p{sub H{sub 2}{sup 3/2}} where p{sub NH{sub 3}} and p{sub H{sub 2}} are the partial pressures of the NH{sub 3} and H{sub 2} in the nitriding atmosphere. In contrast with nitriding of α-Fe where the nitriding potential is usually in the range between 0.01 and 1 atm{sup -1/2}, nitriding of Ni and Ni-based alloys requires employing nitriding potentials higher than 100 atm{sup -1/2} and even up to ∞ (nitriding in pure NH{sub 3} atmosphere). This behavior is compatible with decreased thermodynamic stability of the 3d-metal nitrides with increasing atomic number. Depending on the nitriding conditions (temperature, nitriding potential and treatment time), different phases are formed at the surface of the Ni-based alloys. By applying very high nitriding potential, formation of hexagonal Ni{sub 3}N at the surface of the specimen (known as external nitriding) leads to the development of a compound layer, which may improve tribological properties. Underneath the Ni{sub 3}N compound layer, two possibilities exist: (i) alloying element precipitation within the nitrided zone (known as internal nitriding) and/or (ii) development of metastable and

Performance analysis and simulation of vertical gallium nitride nanowire transistors

Science.gov (United States)

Witzigmann, Bernd; Yu, Feng; Frank, Kristian; Strempel, Klaas; Fatahilah, Muhammad Fahlesa; Schumacher, Hans Werner; Wasisto, Hutomo Suryo; Römer, Friedhard; Waag, Andreas

2018-06-01

Gallium nitride (GaN) nanowire transistors are analyzed using hydrodynamic simulation. Both p-body and n-body devices are compared in terms of threshold voltage, saturation behavior and transconductance. The calculations are calibrated using experimental data. The threshold voltage can be tuned from enhancement to depletion mode with wire doping. Surface states cause a shift of threshold voltage and saturation current. The saturation current depends on the gate design, with a composite gate acting as field plate in the p-body device. He joined Bell Laboratories, Murray Hill, NJ, as a Technical Staff Member. In October 2001, he joined the Optical Access and Transport Division, Agere Systems, Alhambra, CA. In 2004, he was appointed an Assistant Professor at ETH Zurich,. Since 2008, at the University of Kassel, Kassel, Germany, and he has been a Professor the Head of the Computational Electronics and Photonics Group, and co-director of CINSaT since 2010. His research interests include computational optoelectronics, process and device design of semiconductor photonic devices, microwave components, and electromagnetics modeling for nanophotonics. Dr. Witzigmann is a senior member of the SPIE and IEEE.

Effect of carbo-nitride-rich and oxide-rich inclusions on the pitting susceptibility of depleted uranium

International Nuclear Information System (INIS)

Pu, Zhen; Chen, Xianglin; Meng, Xiandong; Wu, Yanping; Shen, Liang; Wang, Qingfu; Liu, Tianwei; Shuai, Maobing

2017-01-01

Highlights: •The Volta potential differences relative to the matrix are positive for both types of inclusions. •Both types of inclusions are cathodic in the “inclusion/matrix” microgalvanic couples. •The oxide-rich inclusions show a larger Volta potential value of about 115 mV than the carbo-nitride-rich inclusions. •The oxide-rich inclusions give stronger local galvanic coupling with the matrix. •The oxide-rich inclusions are more predisposed to initiate pitting corrosion. -- Abstract: The effects of carbo-nitride-rich and oxide-rich inclusions on the pitting susceptibility of depleted uranium were investigated by electrochemical corrosion measurements, optical microscopy, scanning Kelvin probe force microscopy (SKPFM), and SEM. The results of the potentiodynamic polarization tests suggest that oxide-rich inclusions are more likely to induce pitting corrosion than carbo-nitride-rich inclusions. This enhanced corrosion may be explained by the strong local galvanic coupling between the oxide-rich inclusion and the surrounding matrix, which, from the sight of SKPFM analysis, exhibits a 115 V higher Volta potential than the coupling between the carbo-nitride-rich inclusions and the matrix, respectively.

Optical constants of Cu(In, Ga)Se{sub 2} for arbitrary Cu and Ga compositions

Energy Technology Data Exchange (ETDEWEB)

Minoura, Shota; Kodera, Keita; Nakane, Akihiro; Fujiwara, Hiroyuki, E-mail: fujiwara@gifu-u.ac.jp [Center of Innovative Photovoltaic Systems (CIPS), Gifu University, 1-1 Yanagido, Gifu 501-1193 (Japan); Maekawa, Takuji [Research and Development Headquarters, ROHM Co., Ltd., 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585 (Japan); Niki, Shigeru [Research Center for Photovoltaic Technologies, National Institute of Advanced Industrial Science and Technology (AIST), Central2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568 (Japan)

2015-05-21

The optical constants of Cu(In, Ga)Se{sub 2} (CIGS)-based polycrystalline layers with different Cu and Ga compositions are parameterized completely up to a photon energy of 6.5 eV assuming several Tauc-Lorentz transition peaks. Based on the modeled optical constants, we establish the calculation procedure for the CIGS optical constants in a two-dimensional compositional space of (Cu, Ga) by taking the composition-induced shift of the critical point energies into account. In particular, we find that the variation of the CIGS optical constants with the Cu composition can be modeled quite simply by a spectral-averaging method in which the dielectric function of the target Cu composition is estimated as a weighted average of the dielectric functions with higher and lower Cu compositions. To express the effect of the Ga composition, on the other hand, an energy shift model reported earlier is adopted. Our model is appropriate for a wide variety of CIGS-based materials having different Cu and Ga compositions, although the modeling error increases slightly at lower Cu compositions [Cu/(In + Ga) < 0.69]. From our model, the dielectric function, refractive index, extinction coefficient, and absorption coefficient for the arbitrary CIGS composition can readily be obtained. The optical database developed in this study is applied further for spectroscopic ellipsometry analyses of CIGS layers fabricated by single and multi-stage coevaporation processes. We demonstrate that the compositional and structural characterizations of the CIGS-based layers can be performed from established analysis methods.

Alloy Effects on the Gas Nitriding Process

Science.gov (United States)

Yang, M.; Sisson, R. D.

2014-12-01

Alloy elements, such as Al, Cr, V, and Mo, have been used to improve the nitriding performance of steels. In the present work, plain carbon steel AISI 1045 and alloy steel AISI 4140 were selected to compare the nitriding effects of the alloying elements in AISI 4140. Fundamental analysis is carried out by using the "Lehrer-like" diagrams (alloy specific Lehrer diagram and nitriding potential versus nitrogen concentration diagram) and the compound layer growth model to simulate the gas nitriding process. With this method, the fundamental understanding for the alloy effect based on the thermodynamics and kinetics becomes possible. This new method paves the way for the development of new alloy for nitriding.

Ion nitridation - physical and technological aspects

International Nuclear Information System (INIS)

Elbern, A.W.

1980-01-01

Ion nitridation, is a technique which allows the formation of a controlled thickness of nitrides in the surface of the material, using this material as the cathode in a low pressure glow discharge, which presents many advantages over the conventional method. A brief review of the ion nitriding technique, the physical fenomena involved, and we discuss technological aspects of this method, are presented. (Author) [pt

Silicon nitride-fabrication, forming and properties

International Nuclear Information System (INIS)

Yehezkel, O.

1983-01-01

This article, which is a literature survey of the recent years, includes description of several methods for the formation of silicone nitride, and five methods of forming: Reaction-bonded silicon nitride, sintering, hot pressing, hot isostatic pressing and chemical vapour deposition. Herein are also included data about mechanical and physical properties of silicon nitride and the relationship between the forming method and the properties. (author)

Optically induced paramagnetism in amorphous hydrogenated silicon nitride thin films

International Nuclear Information System (INIS)

Warren, W.L.; Kanicki, J.; Buchwald, W.R.; Rong, F.C.; Harmatz, M.

1992-01-01

This paper reports that the creation mechanisms of Si and N dangling bond defect centers in amorphous hydrogenated silicon nitride thin films by ultra-violet (UV) illumination are investigated. The creation efficiency and density of Si centers in the N-rich films are independent of illumination temperature, strongly suggesting that the creation mechanism of the spins in electronic in nature, i.e., a charge transfer mechanism. However, our results suggest that the creation of the Si dangling bond in the Si-rich films are different. Last, we find that the creation of the N dangling-bond in N-rich films can be fit to a stretched exponential time dependence, which is characteristic of dispersive charge transport

Optical appearance of AC anodized Al/TiO2 composite coatings

DEFF Research Database (Denmark)

Bordo, Kirill; Gudla, Visweswara Chakravarthy; Ambat, Rajan

2014-01-01

amplitudes. The microstructure and composition of the obtained anodic films were determined by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX) and transmission electron microscopy (TEM). The optical appearance of the films was characterized by optical reflectance spectroscopy...

Formation and properties of chromium nitride coatings on martensitic steels

International Nuclear Information System (INIS)

Mendala, B.; Swadzba, L.; Hetmanczyk, M.

1999-01-01

In this paper the results of investigation of coatings obtained by ARC-PVD method on martensitic E1961 (13H12NWMFA) steel, which is used on compressor blades in the aircraft engines, were presented. The chemical composition of E1961 was given. The PVT-550 device was used for coating. The protective chromium nitride coatings were tested. The influence of ARC-PVD method parameters for example: bias, pressure and flow rate of reactive gases on the structure and properties of the CrN coatings in corrosion tests were investigated. Technical parameters of obtained CrN coatings were given. The phase analysis of chromium nitride coatings obtained with different technical parameters were tested. The results of phase analysis are given. The pitting corrosion resistance tests in 10% FeCl 3 solution was conducted. The corrosion rate for CrN coated samples were defined. It was found that 50 V and 100 V bias, about 0.5 and 0.7 Pa pressure and 140 sccm (standard cubic centimeter) flow rate of nitride during coating favour the CrN monophase structure while increasing bias to 150 V, decreasing the pressure to about 0.5 Pa and 0.3 Pa and increasing the flow rate of nitride to 160 - 180 sccm favour the CrN+Cr 2 N diphase structure. On the basis of corrosion investigations for CrN coatings obtained with different ARC-PVD parameters the best corrosion resistance in 10% FeCl 3 solution for CrN+Cr 2 N diphase structure was found. (author)

Synthesis of reduced carbon nitride at the reduction by hydroquinone of water-soluble carbon nitride oxide (g-C{sub 3}N{sub 4})O

Energy Technology Data Exchange (ETDEWEB)

Kharlamov, Alexey [Frantsevich Institute for Problems of Materials Science of NASU, Krzhyzhanovsky St. 3, 03680 Kiev (Ukraine); Bondarenko, Marina, E-mail: mebondarenko@ukr.net [Frantsevich Institute for Problems of Materials Science of NASU, Krzhyzhanovsky St. 3, 03680 Kiev (Ukraine); Kharlamova, Ganna [Taras Shevchenko National University of Kiev, Volodymyrs' ka St. 64, 01601 Kiev (Ukraine); Fomenko, Veniamin [Frantsevich Institute for Problems of Materials Science of NASU, Krzhyzhanovsky St. 3, 03680 Kiev (Ukraine)

2016-09-15

For the first time at the reduction by hydroquinone of water-soluble carbon nitride oxide (g-C{sub 3}N{sub 4})O reduced carbon nitride (or reduced multi-layer azagraphene) is obtained. It is differed from usually synthesized carbon nitride by a significantly large (on 0.09 nm) interplanar distance is. At the same time, the chemical bonds between atoms in a heteroatomic plane of reduced carbon nitride correspond to the bonds in a synthesized g-C{sub 3}N{sub 4}. The samples of water-soluble carbon nitride oxide were synthesized under the special reactionary conditions of a pyrolysis of melamine and urea. We believe that reduced carbon nitride consists of weakly connected carbon-nitrogen monosheets (azagraphene sheets) as well as reduced (from graphene oxide) graphene contains weakly connected graphene sheets. - Graphical abstract: XRD pattern and schematic atomic model of one layer of reduced carbon nitride, carbon nitride oxide and synthesized carbon nitride. For the first time at the reduction by hydroquinone of the water-soluble carbon nitride oxide (g-C{sub 3}N{sub 4})O is obtained the reduced carbon nitride (or reduced multi-layer azagraphene). Display Omitted - Highlights: • First the reduced carbon nitride (RCN) at the reduction of the carbon nitride oxide was obtained. • Water-soluble carbon nitride oxide was reduced by hydroquinone. • The chemical bonds in a heteroatomic plane of RCN correspond to the bonds in a synthesized g-C{sub 3}N{sub 4}. • Reduced carbon nitride consists of poorly connected heteroatomic azagraphene layers.

Processing development for ceramic structural components: the influence of a presintering of silicon on the final properties of reaction bonded silicon nitride. Final technical report

Energy Technology Data Exchange (ETDEWEB)

1982-03-01

The influence of a presintering of silicon on the final properties of reaction bonded silicon nitride has been studied using scanning electron and optical microscopy, x-ray diffraction analysis, 4 pt. bend test, and mecury intrusion porosimetry. It has been shown that presintering at 1050/sup 0/C will not affect the final nitrided properties. At 1200/sup 0/C, the oxide layer is removed, promoting the formation of B-phase silicon nitride. Presintering at 1200/sup 0/C also results in compact weight loss due to the volatilization of silicon, and the formation of large pores which severely reduce nitrided strength. The development of the structure of sintered silicon compacts appears to involve a temperature gradient, with greater sintering observed near the surface.

Electrical and optical properties of indium tin oxide/epoxy composite film

International Nuclear Information System (INIS)

Guo Xia; Guo Chun-Wei; Chen Yu; Su Zhi-Ping

2014-01-01

The electrical and optical properties of the indium tin oxide (ITO)/epoxy composite exhibit dramatic variations as functions of the ITO composition and ITO particle size. Sharp increases in the conductivity in the vicinity of a critical volume fraction have been found within the framework of percolation theory. A conductive and insulating transition model is extracted by the ITO particle network in the SEM image, and verified by the resistivity dependence on the temperature. The dependence of the optical transmittance on the particle size was studied. Further decreasing the ITO particle size could further improve the percolation threshold and light transparency of the composite film. (condensed matter: structural, mechanical, and thermal properties)

Mechanical, dielectric and optical assessment of glass composites ...

Indian Academy of Sciences (India)

The band gap, Urbach energy and the extinction coefficient of the glass composites have been ... icate glasses during our previous studies.7 Lanthanum oxide. (La2O3) .... vs. incident photon energy hν are used to determine the type of optical ...

Fabrication of a silicon oxide stamp by edge lithography reinforced with silicon nitride for nanoimprint lithography

NARCIS (Netherlands)

Zhao, Yiping; Berenschot, Johan W.; de Boer, M.; de Boer, Meint J.; Jansen, Henricus V.; Tas, Niels Roelof; Huskens, Jurriaan; Elwenspoek, Michael Curt

2008-01-01

The fabrication of a stamp reinforced with silicon nitride is presented for its use in nanoimprint lithography. The fabrication process is based on edge lithography using conventional optical lithography and wet anisotropic etching of 110 silicon wafers. SiO2 nano-ridges of 20 nm in width were

Topotactic synthesis of vanadium nitride solid foams

International Nuclear Information System (INIS)

Oyama, S.T.; Kapoor, R.; Oyama, H.T.; Hofmann, D.J.; Matijevic, E.

1993-01-01

Vanadium nitride has been synthesized with a surface area of 120 m 2 g -1 by temperature programmed nitridation of a foam-like vanadium oxide (35 m 2 g -1 ), precipitated from vanadate solutions. The nitridation reaction was established to be topotactic and pseudomorphous by x-ray powder diffraction and scanning electron microscopy. The crystallographic relationship between the nitride and oxide was {200}//{001}. The effect of precursor geometry on the product size and shape was investigated by employing vanadium oxide solids of different morphologies

Microstructure and mechanical properties of silicon nitride structural ceramics of silicon nitride

International Nuclear Information System (INIS)

Strohaecker, T.R.; Nobrega, M.C.S.

1989-01-01

The utilization of direct evaluation technic of tenacity for fracturing by hardness impact in silicon nitride ceramics is described. The microstructure were analysied, by Scanning Electron Microscopy, equiped with a microanalysis acessory by X ray energy dispersion. The difference between the values of K IC measure for two silicon nitride ceramics is discussed, in function of the microstructures and the fracture surfaces of the samples studied. (C.G.C.) [pt

Zirconium nitride hard coatings

International Nuclear Information System (INIS)

Roman, Daiane; Amorim, Cintia Lugnani Gomes de; Soares, Gabriel Vieira; Figueroa, Carlos Alejandro; Baumvol, Israel Jacob Rabin; Basso, Rodrigo Leonardo de Oliveira

2010-01-01

Zirconium nitride (ZrN) nanometric films were deposited onto different substrates, in order to study the surface crystalline microstructure and also to investigate the electrochemical behavior to obtain a better composition that minimizes corrosion reactions. The coatings were produced by physical vapor deposition (PVD). The influence of the nitrogen partial pressure, deposition time and temperature over the surface properties was studied. Rutherford backscattering spectrometry (RBS), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), scanning electron microscopy (SEM) and corrosion experiments were performed to characterize the ZrN hard coatings. The ZrN films properties and microstructure changes according to the deposition parameters. The corrosion resistance increases with temperature used in the films deposition. Corrosion tests show that ZrN coating deposited by PVD onto titanium substrate can improve the corrosion resistance. (author)

Growth and characterisation of group-III nitride-based nanowires for devices

Energy Technology Data Exchange (ETDEWEB)

Meijers, R J

2007-08-30

One of the main goals of this thesis was to get more insight into the mechanisms driving the growth of nitride nanowires by plasma-assisted molecular beam epitaxy (PA-MBE). The influence of the group-III and group-V flux as well as the substrate temperature T{sub sub} has been studied leading to the conclusion that the III-V ratio determines the growth mode. Ga desorption limits the temperature range to grow GaN nanowires and dissociation of InN is the limiting factor for InN nanowire growth. A reduction of the surface diffusivity on polar surfaces under N-rich conditions explains the anisotropic growth. Growth kinetics of the nanowires show that there are two important contributions to the growth. The first is growth by direct impingement and its contribution is independent of the nanowire diameter. The second contribution comes from atoms, which absorb on the substrate or wire sidewalls and diffuse along the sidewalls to the top of the wire, which acts as an effective sink for the adatoms due to a reduced surface mobility on the polar top of the wires. This diffusion channel, which is enhanced at higher T{sub sub}, becomes more significant for smaller wire diameters, because its contribution scales like 1/d. Experiments with an interruption of the growth and sharp interfaces in TEM images of heterostructures show that the suggestion in literature of a droplet-mediated PA-MBE nitride growth has to be discarded. Despite a thin amorphous silicon nitride wetting layer on the substrate surface, both GaN and InN nanowires grow in the wurtzite structure and epitaxially in a one-to-one relation to the Si(111) substrate surface. There is no evidence for cubic phases. TEM images and optical studies display a high crystalline and optical quality of GaN and InN nanowires. The substrate induces some strain in the bottom part of the nanowires, especially in InN due to the lower T{sub sub} than for GaN, which is released without the formation of dislocations. Only some stacking

Evolution of magnetism by rolling up hexagonal boron nitride nanosheets tailored with superparamagnetic nanoparticles.

Science.gov (United States)

Hwang, Da Young; Choi, Kyoung Hwan; Park, Jeong Eon; Suh, Dong Hack

2017-02-01

Controlling tunable properties by rolling up two dimensional nanomaterials is an exciting avenue for tailoring the electronic and magnetic properties of materials at the nanoscale. We demonstrate the tailoring of a magnetic nanocomposite through hybridization with magnetic nanomaterials using hexagonal boron nitride (h-BN) templates as an effective way to evolve magnetism for the first time. Boron nitride nanosheets exhibited their typical diamagnetism, but rolled-up boron nitride sheets (called nanoscrolls) clearly have para-magnetism in the case of magnetic susceptibility. Additionally, the Fe 3 O 4 NP sample shows a maximum ZFC curve at about 103 K, which indicates well dispersed superparamagnetic nanoparticles. The ZFC curve for the h-BN-Fe 3 O 4 NP scrolls exhibited an apparent rounded maximum blocking temperature at 192 K compared to the Fe 3 O 4 NPs, leading to a dramatic increase in T B . These magnetic nanoscroll derivatives are remarkable materials and should be suitable for high-performance composites and nano-, medical- and electromechanical-devices.

Anti corrosion layer for stainless steel in molten carbonate fuel cell - comprises phase vapour deposition of titanium nitride, aluminium nitride or chromium nitride layer then oxidising layer in molten carbonate electrolyte

DEFF Research Database (Denmark)

2000-01-01

Forming an anticorrosion protective layer on a stainless steel surface used in a molten carbonate fuel cell (MCFC) - comprises the phase vapour deposition (PVD) of a layer comprising at least one of titanium nitride, aluminium nitride or chromium nitride and then forming a protective layer in situ...

Optical properties study of nano-composite filled D shape photonic crystal fibre

Directory of Open Access Journals (Sweden)

R. Udaiyakumar

2018-06-01

Full Text Available With the nano-composite materials gaining momentum in the optical field, a new nano-composite filled D shape Photonic Crystal Fiber (PCF is designed and the various optical properties are investigated with help of Finite Element Method. In the proposed structure the D-shape PCF is made up of silica with embedded silver nanoparticles and air holes are distributed along the fibre. The designed fibre shows various optical properties such as dispersion, birefringence, beat length and loss with respect to wavelength and compared with different filling factor like 0.1, 0.3 and 0.5. From our estimation and comparative analysis, it has been proved that the fibre loss has been decreased with increasing filling factor. Further this also showed flat dispersion at maximum filling factor. Keywords: Nanoparticles, Nano-composite, Dispersion, Birefringence, Beat length

The prospect of uranium nitride (UN) and mixed nitride fuel (UN-PuN) for pressurized water reactor

International Nuclear Information System (INIS)

Syarifah, Ratna Dewi; Suud, Zaki

2015-01-01

Design study of small Pressurized Water Reactors (PWRs) core loaded with uranium nitride fuel (UN) and mixed nitride fuel (UN-PuN), Pa-231 as burnable poison, and Americium has been performed. Pa-231 known as actinide material, have large capture cross section and can be converted into fissile material that can be utilized to reduce excess reactivity. Americium is one of minor actinides with long half life. The objective of adding americium is to decrease nuclear spent fuel in the world. The neutronic analysis results show that mixed nitride fuel have k-inf greater than uranium nitride fuel. It is caused by the addition of Pu-239 in mixed nitride fuel. In fuel fraction analysis, for uranium nitride fuel, the optimum volume fractions are 45% fuel fraction, 10% cladding and 45% moderator. In case of UN-PuN fuel, the optimum volume fractions are 30% fuel fraction, 10% cladding and 60% coolant/ moderator. The addition of Pa-231 as burnable poison for UN fuel, enrichment U-235 5%, with Pa-231 1.6% has k-inf more than one and excess reactivity of 14.45%. And for mixed nitride fuel, the lowest value of reactivity swing is when enrichment (U-235+Pu) 8% with Pa-231 0.4%, the excess reactivity value 13,76%. The fuel pin analyze for the addition of Americium, the excess reactivity value is lower than before, because Americium absorb the neutron. For UN fuel, enrichment U-235 8%, Pa-231 1.6% and Am 0.5%, the excess reactivity is 4.86%. And for mixed nitride fuel, when enrichment (U-235+Pu) 13%, Pa-231 0.4% and Am 0.1%, the excess reactivity is 11.94%. For core configuration, it is better to use heterogeneous than homogeneous core configuration, because the radial power distribution is better

The prospect of uranium nitride (UN) and mixed nitride fuel (UN-PuN) for pressurized water reactor

Science.gov (United States)

Syarifah, Ratna Dewi; Suud, Zaki

2015-09-01

Design study of small Pressurized Water Reactors (PWRs) core loaded with uranium nitride fuel (UN) and mixed nitride fuel (UN-PuN), Pa-231 as burnable poison, and Americium has been performed. Pa-231 known as actinide material, have large capture cross section and can be converted into fissile material that can be utilized to reduce excess reactivity. Americium is one of minor actinides with long half life. The objective of adding americium is to decrease nuclear spent fuel in the world. The neutronic analysis results show that mixed nitride fuel have k-inf greater than uranium nitride fuel. It is caused by the addition of Pu-239 in mixed nitride fuel. In fuel fraction analysis, for uranium nitride fuel, the optimum volume fractions are 45% fuel fraction, 10% cladding and 45% moderator. In case of UN-PuN fuel, the optimum volume fractions are 30% fuel fraction, 10% cladding and 60% coolant/ moderator. The addition of Pa-231 as burnable poison for UN fuel, enrichment U-235 5%, with Pa-231 1.6% has k-inf more than one and excess reactivity of 14.45%. And for mixed nitride fuel, the lowest value of reactivity swing is when enrichment (U-235+Pu) 8% with Pa-231 0.4%, the excess reactivity value 13,76%. The fuel pin analyze for the addition of Americium, the excess reactivity value is lower than before, because Americium absorb the neutron. For UN fuel, enrichment U-235 8%, Pa-231 1.6% and Am 0.5%, the excess reactivity is 4.86%. And for mixed nitride fuel, when enrichment (U-235+Pu) 13%, Pa-231 0.4% and Am 0.1%, the excess reactivity is 11.94%. For core configuration, it is better to use heterogeneous than homogeneous core configuration, because the radial power distribution is better.

Effect of Plasma Nitriding Process Conditions on Corrosion Resistance of 440B Martensitic Stainless Steel

Directory of Open Access Journals (Sweden)

Łępicka Magdalena

2014-09-01

Full Text Available Martensitic stainless steels are used in a large number of various industrial applications, e.g. molds for plastic injections and glass moldings, automotive components, cutting tools, surgical and dental instruments. The improvement of their tribological and corrosion properties is a problem of high interest especially in medical applications, where patient safety becomes a priority. The paper covers findings from plasma nitrided AISI 440B (PN-EN or DIN X90CrMoV18 stainless steel corrosion resistance studies. Conventionally heat treated and plasma nitrided in N2:H2 reaction gas mixture (50:50, 65:35 and 80:20, respectively in two different temperature ranges (380 or 450°C specimens groups were examined. Microscopic observations and electrochemical corrosion tests were performed using a variety of analytical techniques. As obtained findings show, plasma nitriding of AISI 440B stainless steel, regardless of the process temperature, results in reduction of corrosion current density. Nevertheless, applying thermo-chemical process which requires exceeding temperature of about 400°C is not recommended due to increased risk of steel sensitization to intergranular and stress corrosion. According to the results, material ion nitrided in 450°C underwent leaching corrosion processes, which led to significant disproportion in chemical composition of the corroded and corrosion-free areas. The authors suggest further research into corrosion process of plasma nitrided materials and its degradation products.

Humidity-dependent stability of amorphous germanium nitrides fabricated by plasma nitridation

International Nuclear Information System (INIS)

Kutsuki, Katsuhiro; Okamoto, Gaku; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

2007-01-01

We have investigated the stability of amorphous germanium nitride (Ge 3 N 4 ) layers formed by plasma nitridation of Ge(100) surfaces using x-ray photoelectron spectroscopy and atomic force microscopy. We have found that humidity in the air accelerates the degradation of Ge 3 N 4 layers and that under 80% humidity condition, most of the Ge-N bonds convert to Ge-O bonds, producing a uniform GeO 2 layer, within 12 h even at room temperature. After this conversion of nitrides to oxides, the surface roughness drastically increased by forming GeO 2 islands on the surfaces. These findings indicate that although Ge 3 N 4 layers have superior thermal stability compared to the GeO 2 layers, Ge 3 N 4 reacts readily with hydroxyl groups and it is therefore essential to take the best care of the moisture in the fabrication of Ge-based devices with Ge 3 N 4 insulator or passivation layers

Electronic structure of nitride-based quantum dots

Energy Technology Data Exchange (ETDEWEB)

Winkelnkemper, Momme

2008-11-07

In the present work the electronic and optical properties of In{sub x}Ga{sub 1-x}N/GaN and GaN/AlN QDs are studied by means of eight-band k.p theory. Experimental results are interpreted in detail using the theoretical results. The k.p model for the QD electronicstructure calculations accounts for strain, piezo- and pyroelectric effects, spin-orbit and crystal-field splitting, and is implemented for arbitrarily shaped QDs on a finite differences grid. Few-particle corrections are included using the self-consistent Hartree method. Band parameters for the wurtzite and zinc-blende phases of GaN, AlN, and InN are derived from first-principle G{sub 0}W{sub 0} band-structure calculations. Reliable values are also provided for parameters that have not been determined experimentally yet. The electronic properties of nitride QDs are dominated by the large built-in piezo- and pyroelectric fields, which lead to a pronounced red-shift of excitonic transition energies and extremely long radiative lifetimes in large GaN/AlN QDs. In In{sub x}Ga{sub 1-x}N/GaN QDs these fields induce a pronounced dependence of the radiative excitonic lifetimes on the exact QD shape and composition. It is demonstrated that the resulting variations of the radiative lifetimes in an inhomogeneous QD ensemble are the origin of the multi-exponential luminescence decay frequently observed in time-resolved ensemble measurements on In{sub x}Ga{sub 1-x}N/GaN QDs. A polarization mechanism in nitride QDs based on strain-induced valence-band mixing effects is discovered. Due to the valence-band structure of wurtzite group-III nitrides and the specific strain situation in c-plane QDs, the confined hole states are formed predominantly by the two highest valence bands. In particular, the hole ground state (h{sub 0} {identical_to} h{sub A}) is formed by the A band, and the first excited hole state (h{sub 1} {identical_to} h{sub B}) by the B band. It is shown that the interband transitions involving h{sub A} or h

High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies

Energy Technology Data Exchange (ETDEWEB)

Reddy, Pramod; Washiyama, Shun; Kaess, Felix; Hernandez-Balderrama, Luis H.; Haidet, Brian B.; Alden, Dorian; Franke, Alexander; Sarkar, Biplab; Kohn, Erhard; Collazo, Ramon; Sitar, Zlatko [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919 (United States); Hayden Breckenridge, M. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919 (United States); REU, Physics Department at Wofford College, Spartanburg, South Carolina 29303 (United States)

2016-04-14

In this work, we employed X-ray photoelectron spectroscopy to determine the band offsets and interface Fermi level at the heterojunction formed by stoichiometric silicon nitride deposited on Al{sub x}Ga{sub 1-x}N (of varying Al composition “x”) via low pressure chemical vapor deposition. Silicon nitride is found to form a type II staggered band alignment with AlGaN for all Al compositions (0 ≤ x ≤ 1) and present an electron barrier into AlGaN even at higher Al compositions, where E{sub g}(AlGaN) > E{sub g}(Si{sub 3}N{sub 4}). Further, no band bending is observed in AlGaN for x ≤ 0.6 and a reduced band bending (by ∼1 eV in comparison to that at free surface) is observed for x > 0.6. The Fermi level in silicon nitride is found to be at 3 eV with respect to its valence band, which is likely due to silicon (≡Si{sup 0/−1}) dangling bonds. The presence of band bending for x > 0.6 is seen as a likely consequence of Fermi level alignment at Si{sub 3}N{sub 4}/AlGaN hetero-interface and not due to interface states. Photoelectron spectroscopy results are corroborated by current-voltage-temperature and capacitance-voltage measurements. A shift in the interface Fermi level (before band bending at equilibrium) from the conduction band in Si{sub 3}N{sub 4}/n-GaN to the valence band in Si{sub 3}N{sub 4}/p-GaN is observed, which strongly indicates a reduction in mid-gap interface states. Hence, stoichiometric silicon nitride is found to be a feasible passivation and dielectric insulation material for AlGaN at any composition.

Formation and characterization of titanium nitride and titanium carbide films prepared by reactive sputtering

International Nuclear Information System (INIS)

Sundgren, J.-E.

1982-01-01

Titanium has been reactively r.f. sputtered in mixed Ar-N 2 and Ar-CH 4 discharges on to substrates held at 775 K. The films obtained have been characterized by scanning electron microscopy, X-ray diffraction and by measurements of hardness and electrical resistivity. The compositions of the films have been determined using Auger electron spectroscopy. The processes occurring both on substrates and target surfaces have been studied and it is shown that the latter is of great importance for the composition and structure of deposited films. Titanium nitride films of full density and with electrical resistivity and hardness values close to those of bulk TiN were only obtained in a narrow range close to the stoichiometric composition. Titanium carbide films grown on non-biased substrates were found to have an open structure and thus a low density. A bias applied to the substrate, however, improved the quality of the films. It is also shown that the heat of formation of the compounds plays an important role in the formation of carbides and nitrides. A large value promotes the development of large grains and dense structures. (Auth.)

Characterization of polymethyl methacrylate/polyethylene glycol/aluminum nitride composite as form-stable phase change material prepared by in situ polymerization method

International Nuclear Information System (INIS)

Zhang, Lei; Zhu, Jiaoqun; Zhou, Weibin; Wang, Jun; Wang, Yan

2011-01-01

Highlights: → Form-stable PMMA/PEG/AlN PCMs were prepared by in situ polymerization method. → AlN additive effectively enhanced the heat transfer property of composite PCMs. → The composites exhibited desirable thermal performance and electric insulativity. → The composites were available for the thermal management of electronic device. - Abstract: This work was focused on the preparation and characterization of a new type of form-stable phase change material (PCM) employed in thermal management. Using the method of in situ polymerization, polyethylene glycol (PEG) acting as the PCM and aluminum nitride (AlN) serving as the thermal conductivity promoter were uniformly encapsulated and embedded inside the three-dimensional network structure of PMMA matrix. When the mass fraction of PEG was below 70%, the prepared composite PCMs remained solid without leakage above the melting point of the PEG. XRD and FT-IR results indicated that the PEG was physically combined with PMMA matrix and AlN additive and did not participate in the polymerization. Thermal analysis results showed that the prepared composite PCMs possess available latent heat capacity and thermal stability, and the AlN additive was able to effectively enhance the heat transfer property of organic PCM. Moreover, the volume resistivity of composite achieved (5.92 ± 0.16) x 10 10 Ω cm when the mass ratio of AlN was 30%. To sum up, the prepared form-stable PCMs were competent for the thermal management of electronic device due to their acceptable thermal performance and electric insulativity.

Highly stable porous silicon-carbon composites as label-free optical biosensors.

Science.gov (United States)

Tsang, Chun Kwan; Kelly, Timothy L; Sailor, Michael J; Li, Yang Yang

2012-12-21

A stable, label-free optical biosensor based on a porous silicon-carbon (pSi-C) composite is demonstrated. The material is prepared by electrochemical anodization of crystalline Si in an HF-containing electrolyte to generate a porous Si template, followed by infiltration of poly(furfuryl) alcohol (PFA) and subsequent carbonization to generate the pSi-C composite as an optically smooth thin film. The pSi-C sensor is significantly more stable toward aqueous buffer solutions (pH 7.4 or 12) compared to thermally oxidized (in air, 800 °C), hydrosilylated (with undecylenic acid), or hydrocarbonized (with acetylene, 700 °C) porous Si samples prepared and tested under similar conditions. Aqueous stability of the pSi-C sensor is comparable to related optical biosensors based on porous TiO(2) or porous Al(2)O(3). Label-free optical interferometric biosensing with the pSi-C composite is demonstrated by detection of rabbit IgG on a protein-A-modified chip and confirmed with control experiments using chicken IgG (which shows no affinity for protein A). The pSi-C sensor binds significantly more of the protein A capture probe than porous TiO(2) or porous Al(2)O(3), and the sensitivity of the protein-A-modified pSi-C sensor to rabbit IgG is found to be ~2× greater than label-free optical biosensors constructed from these other two materials.

Monitoring Pre-Stressed Composites Using Optical Fibre Sensors.

Science.gov (United States)

Krishnamurthy, Sriram; Badcock, Rodney A; Machavaram, Venkata R; Fernando, Gerard F

2016-05-28

Residual stresses in fibre reinforced composites can give rise to a number of undesired effects such as loss of dimensional stability and premature fracture. Hence, there is significant merit in developing processing techniques to mitigate the development of residual stresses. However, tracking and quantifying the development of these fabrication-induced stresses in real-time using conventional non-destructive techniques is not straightforward. This article reports on the design and evaluation of a technique for manufacturing pre-stressed composite panels from unidirectional E-glass/epoxy prepregs. Here, the magnitude of the applied pre-stress was monitored using an integrated load-cell. The pre-stressing rig was based on a flat-bed design which enabled autoclave-based processing. A method was developed to end-tab the laminated prepregs prior to pre-stressing. The development of process-induced residual strain was monitored in-situ using embedded optical fibre sensors. Surface-mounted electrical resistance strain gauges were used to measure the strain when the composite was unloaded from the pre-stressing rig at room temperature. Four pre-stress levels were applied prior to processing the laminated preforms in an autoclave. The results showed that the application of a pre-stress of 108 MPa to a unidirectional [0]16 E-glass/913 epoxy preform, reduced the residual strain in the composite from -600 µε (conventional processing without pre-stress) to approximately zero. A good correlation was observed between the data obtained from the surface-mounted electrical resistance strain gauge and the embedded optical fibre sensors. In addition to "neutralising" the residual stresses, superior axial orientation of the reinforcement can be obtained from pre-stressed composites. A subsequent publication will highlight the consequences of pres-stressing on fibre alignment, the tensile, flexural, compressive and fatigue performance of unidirectional E-glass composites.

Monitoring Pre-Stressed Composites Using Optical Fibre Sensors

Directory of Open Access Journals (Sweden)

Sriram Krishnamurthy

2016-05-01

Full Text Available Residual stresses in fibre reinforced composites can give rise to a number of undesired effects such as loss of dimensional stability and premature fracture. Hence, there is significant merit in developing processing techniques to mitigate the development of residual stresses. However, tracking and quantifying the development of these fabrication-induced stresses in real-time using conventional non-destructive techniques is not straightforward. This article reports on the design and evaluation of a technique for manufacturing pre-stressed composite panels from unidirectional E-glass/epoxy prepregs. Here, the magnitude of the applied pre-stress was monitored using an integrated load-cell. The pre-stressing rig was based on a flat-bed design which enabled autoclave-based processing. A method was developed to end-tab the laminated prepregs prior to pre-stressing. The development of process-induced residual strain was monitored in-situ using embedded optical fibre sensors. Surface-mounted electrical resistance strain gauges were used to measure the strain when the composite was unloaded from the pre-stressing rig at room temperature. Four pre-stress levels were applied prior to processing the laminated preforms in an autoclave. The results showed that the application of a pre-stress of 108 MPa to a unidirectional [0]16 E-glass/913 epoxy preform, reduced the residual strain in the composite from −600 µε (conventional processing without pre-stress to approximately zero. A good correlation was observed between the data obtained from the surface-mounted electrical resistance strain gauge and the embedded optical fibre sensors. In addition to “neutralising” the residual stresses, superior axial orientation of the reinforcement can be obtained from pre-stressed composites. A subsequent publication will highlight the consequences of pres-stressing on fibre alignment, the tensile, flexural, compressive and fatigue performance of unidirectional E

Monitoring Pre-Stressed Composites Using Optical Fibre Sensors

Science.gov (United States)

Krishnamurthy, Sriram; Badcock, Rodney A.; Machavaram, Venkata R.; Fernando, Gerard F.

2016-01-01

Residual stresses in fibre reinforced composites can give rise to a number of undesired effects such as loss of dimensional stability and premature fracture. Hence, there is significant merit in developing processing techniques to mitigate the development of residual stresses. However, tracking and quantifying the development of these fabrication-induced stresses in real-time using conventional non-destructive techniques is not straightforward. This article reports on the design and evaluation of a technique for manufacturing pre-stressed composite panels from unidirectional E-glass/epoxy prepregs. Here, the magnitude of the applied pre-stress was monitored using an integrated load-cell. The pre-stressing rig was based on a flat-bed design which enabled autoclave-based processing. A method was developed to end-tab the laminated prepregs prior to pre-stressing. The development of process-induced residual strain was monitored in-situ using embedded optical fibre sensors. Surface-mounted electrical resistance strain gauges were used to measure the strain when the composite was unloaded from the pre-stressing rig at room temperature. Four pre-stress levels were applied prior to processing the laminated preforms in an autoclave. The results showed that the application of a pre-stress of 108 MPa to a unidirectional [0]16 E-glass/913 epoxy preform, reduced the residual strain in the composite from −600 µε (conventional processing without pre-stress) to approximately zero. A good correlation was observed between the data obtained from the surface-mounted electrical resistance strain gauge and the embedded optical fibre sensors. In addition to “neutralising” the residual stresses, superior axial orientation of the reinforcement can be obtained from pre-stressed composites. A subsequent publication will highlight the consequences of pres-stressing on fibre alignment, the tensile, flexural, compressive and fatigue performance of unidirectional E-glass composites. PMID

Hydrogen diffusion between plasma-deposited silicon nitride-polyimide polymer interfaces

International Nuclear Information System (INIS)

Nguyen, S.V.; Kerbaugh, M.

1988-01-01

This paper reports a nuclear reaction analysis (NRA) for hydrogen technique used to analyze the hydrogen concentration near plasma enhanced chemical vapor deposition (PECVD) silicon nitride-polyimide interfaces at various nitride-deposition and polyimide-polymer-curing temperatures. The CF 4 + O 2 (8% O 2 ) plasma-etch-rate variation of PECVD silicon nitride films deposited on polyimide appeared to correlate well with the variation of hydrogen-depth profiles in the nitride films. The NRA data indicate that hydrogen-depth-profile fluctuation in the nitride films is due to hydrogen diffusion between the nitride-polyimide interfaces during deposition. Annealing treatment of polyimide films in a hydrogen atmosphere prior to the nitride film deposition tends to enhance the hydrogen-depth-profile uniformity in the nitride films, and thus substantially reduces or eliminates variation in the nitride plasma-etch rate

Enhanced mechanical properties of epoxy nanocomposites by mixing noncovalently functionalized boron nitride nanoflakes.

Science.gov (United States)

Lee, Dongju; Song, Sung Ho; Hwang, Jaewon; Jin, Sung Hwan; Park, Kwang Hyun; Kim, Bo Hyun; Hong, Soon Hyung; Jeon, Seokwoo

2013-08-12

The influence of surface modifications on the mechanical properties of epoxy-hexagonal boron nitride nanoflake (BNNF) nanocomposites is investigated. Homogeneous distributions of boron nitride nanoflakes in a polymer matrix, preserving intrinsic material properties of boron nitride nanoflakes, is the key to successful composite applications. Here, a method is suggested to obtain noncovalently functionalized BNNFs with 1-pyrenebutyric acid (PBA) molecules and to synthesize epoxy-BNNF nanocomposites with enhanced mechanical properties. The incorporation of noncovalently functionalized BNNFs into epoxy resin yields an elastic modulus of 3.34 GPa, and 71.9 MPa ultimate tensile strength at 0.3 wt%. The toughening enhancement is as high as 107% compared to the value of neat epoxy. The creep strain and the creep compliance of the noncovalently functionalized BNNF nanocomposite is significantly less than the neat epoxy and the nonfunctionalized BNNF nanocomposite. Noncovalent functionalization of BNNFs is effective to increase mechanical properties by strong affinity between the fillers and the matrix. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Nucleation of iron nitrides during gaseous nitriding of iron; the effect of a preoxidation treatment

DEFF Research Database (Denmark)

Friehling, Peter B.; Poulsen, Finn Willy; Somers, Marcel A.J.

2001-01-01

grains. On prolonged nitriding, immediate nucleation at the surface of iron grains becomes possible. Calculated incubation times for the nucleation of gamma'-Fe4N1-x during nitriding are generally longer than those observed experimentally in the present work. The incubation time is reduced dramatically...

RF plasma nitriding of severely deformed iron-based alloys

International Nuclear Information System (INIS)

Ferkel, H.; Glatzer, M.; Estrin, Y.; Valiev, R.Z.; Blawert, C.; Mordike, B.L.

2003-01-01

The effect of severe plastic deformation by cold high pressure torsion (HPT) on radio frequency (RF) plasma nitriding of pure iron, as well as St2K50 and X5CrNi1810 steels was investigated. Nitriding was carried out for 3 h in a nitrogen atmosphere at a pressure of 10 -5 bar and temperatures of 350 and 400 deg. C. Nitrided specimens were analysed by scanning electron microscopy (SEM), X-ray diffraction and micro hardness measurements. It was found that HPT enhances the effect of nitriding leading almost to doubling of the thickness of the nitrided layer for pure iron and the high alloyed steel. The largest increase in hardness was observed when HPT was combined with RF plasma nitriding at 350 deg. C. In the case of pure iron, the X-ray diffraction spectra showed the formation of ε and γ' nitrides in the compound layer, with a preferential formation of γ' at the expense of the α-phase at the higher nitriding temperature. The corresponding surface hardness was up to 950 HV0.01. While the HPT-processed St2K50 exhibits both nitride phases after nitriding at 350 deg. C, only the γ'-phase was observed after nitriding at 400 deg. C. A surface hardness of up to 1050 HV0.01 was measured for this steel. The high alloyed steel X5CrNi1810 exhibited the highest increase in surface hardness when HPT was combined with nitriding at 350 deg. C. The surface hardness of this steel was greater than 1400 HV0.025. The XRD analyses indicate the formation of the expanded austenite (S-phase) in the surface layer as a result of RF plasma nitriding. Furthermore, after HPT X5CrNi1810 was transformed completely into deformation martensite which did not transform back to austenite under thermochemical treatment. However, in the case of nitriding of the HPT-processed high alloyed steel at 400 deg. C, the formation of the S-phase was less pronounced. In view of the observed XRD peak broadening, the formation of nitrides, such as e.g. CrN, cannot be ruled out

Fabrication and microstructural analysis of UN-U_3Si_2 composites for accident tolerant fuel applications

International Nuclear Information System (INIS)

Johnson, Kyle D.; Raftery, Alicia M.; Lopes, Denise Adorno; Wallenius, Janne

2016-01-01

In this study, U_3Si_2 was synthesized via the use of arc-melting and mixed with UN powders, which together were sintered using the SPS method. The study revealed a number of interesting conclusions regarding the stability of the system – namely the formation of a probable but as yet unidentified ternary phase coupled with the reduction of the stoichiometry in the nitride phase – as well as some insights into the mechanics of the sintering process itself. By milling the silicide powders and reducing its particle size ratio compared to UN, it was possible to form a high density UN-U_3Si_2 composite, with desirable microstructural characteristics for accident tolerant fuel applications. - Highlights: • U_3Si_2 fabricated from elemental uranium and silicon through arc melting. • Homogeneity of the silicides assessed through densitometry, XRD, SEM and EDS, chemical etching and optical microscopy. • UN powder fabricated using hydriding-nitriding method. • No phase transformations detected when sintering using silicide particle sizes less than UN particle size. • High density composite (98%TD) fabricated with silicide grain coating using spark plasma sintering at 1450 °C.

Titanium nitride coatings synthesized by IPD method with eliminated current oscillations

Directory of Open Access Journals (Sweden)

Chodun Rafał

2016-09-01

Full Text Available This paper presents the effects of elimination of current oscillations within the coaxial plasma accelerator during IPD deposition process on the morphology, phase structure and properties of synthesized TiN coatings. Current observations of waveforms have been made by use of an oscilloscope. As a test material for experiments, titanium nitride TiN coatings synthesized on silicon and high-speed steel substrates were used. The coatings morphology, phase composition and wear resistance properties were determined. The character of current waveforms in the plasma accelerator electric circuit plays a crucial role during the coatings synthesis process. Elimination of the current oscillations leads to obtaining an ultrafine grained structure of titanium nitride coatings and to disappearance of the tendency to structure columnarization. The coatings obtained during processes of a non-oscillating character are distinguished by better wear-resistance properties.

Development of pseudocapacitive molybdenum oxide–nitride for electrochemical capacitors

Energy Technology Data Exchange (ETDEWEB)

Ting, Yen-Jui Bernie [Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada); Wu, Haoran [Department of Materials Science and Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada); Kherani, Nazir P. [Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada); Department of Materials Science and Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada); Lian, Keryn, E-mail: keryn.lian@utoronto.ca [Department of Materials Science and Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada)

2015-03-15

A thin film Mo oxide–nitride pseudocapacitive electrode was synthesized by electrodeposition of Mo oxide on Ti and a subsequent low-temperature (400 °C) thermal nitridation. Two nitridation environments, N{sub 2} and NH{sub 3}, were used and the results were compared. Surface analyses of these nitrided films showed partial conversion of Mo oxide to nitrides, with a lower conversion percentage being the film produced in N{sub 2}. However, the electrochemical analyses showed that the surface of the N{sub 2}-treated film had better pseudocapacitive behaviors and outperformed that nitrided in NH{sub 3}. Cycle life of the resultant N{sub 2}-treated Mo oxide–nitride was also much improved over Mo oxide. A two-electrode cell using Mo oxide–nitride electrodes was demonstrated and showed high rate performance. - Highlights: • Mo(O,N){sub x} was developed by electrodeposition and nitridation in N{sub 2} or NH{sub 3}. • N{sub 2} treated Mo(O,N){sub x} showed a capacitive performance superior to that treated by NH{sub 3}. • The promising electrochemical performance was due to the formation of γ-Mo{sub 2}N.

New Routes to Lanthanide and Actinide Nitrides

Energy Technology Data Exchange (ETDEWEB)

Butt, D.P.; Jaques, B.J.; Osterberg, D.D. [Boise State University, 1910 University Dr., Boise, Idaho 83725-2075 (United States); Marx, B.M. [Concurrent Technologies Corporation, Johnstown, PA (United States); Callahan, P.G. [Carnegie Mellon University, Pittsburgh, PA (United States); Hamdy, A.S. [Central Metallurgical R and D Institute, Helwan, Cairo (Egypt)

2009-06-15

The future of nuclear energy in the U.S. and its expansion worldwide depends greatly on our ability to reduce the levels of high level waste to minimal levels, while maintaining proliferation resistance. Implicit in the so-called advanced fuel cycle is the need for higher levels of fuel burn-up and consequential use of complex nuclear fuels comprised of fissile materials such as Pu, Am, Np, and Cm. Advanced nitride fuels comprised ternary and quaternary mixtures of uranium and these actinides have been considered for applications in advanced power plants, but there remain many processing challenges as well as necessary qualification testing. In this presentation, the advantages and disadvantages of nitride fuels are discussed. Methods of synthesizing the raw materials and sintering of fuels are described including a discussion of novel, low cost routes to nitrides that have the potential for reducing the cost and footprint of a fuel processing plant. Phase pure nitrides were synthesized via four primary methods; reactive milling metal flakes in nitrogen at room temperature, directly nitriding metal flakes in a pure nitrogen atmosphere, hydriding metal flakes prior to nitridation, and carbo-thermically reducing the metal oxide and carbon mixture prior to nitridation. In the present study, the sintering of UN, DyN, and their solid solutions (U{sub x}, Dy{sub 1-x}) (x = 1 to 0.7) were also studied. (authors)

Deuterated silicon nitride photonic devices for broadband optical frequency comb generation

Science.gov (United States)

Chiles, Jeff; Nader, Nima; Hickstein, Daniel D.; Yu, Su Peng; Briles, Travis Crain; Carlson, David; Jung, Hojoong; Shainline, Jeffrey M.; Diddams, Scott; Papp, Scott B.; Nam, Sae Woo; Mirin, Richard P.

2018-04-01

We report and characterize low-temperature, plasma-deposited deuterated silicon nitride thin films for nonlinear integrated photonics. With a peak processing temperature less than 300$^\\circ$C, it is back-end compatible with pre-processed CMOS substrates. We achieve microresonators with a quality factor of up to $1.6\\times 10^6 $ at 1552 nm, and $>1.2\\times 10^6$ throughout $\\lambda$ = 1510 -- 1600 nm, without annealing or stress management. We then demonstrate the immediate utility of this platform in nonlinear photonics by generating a 1 THz free spectral range, 900-nm-bandwidth modulation-instability microresonator Kerr comb and octave-spanning, supercontinuum-broadened spectra.

Synthesis of carbon nitride powder by selective etching of TiC0.3N0.7 in chlorine-containing atmosphere at moderate temperature

International Nuclear Information System (INIS)

Sui Jian; Lu Jinjun

2010-01-01

We reported the synthesis of carbon nitride powder by extracting titanium from single inorganic precursor TiC 0.3 N 0.7 in chlorine-containing atmosphere at ambient pressure and temperature not exceeding 500 deg. C. The TiC 0.3 N 0.7 crystalline structure acted as a template, supplying active carbon and nitrogen atoms for carbon nitride when it was destroyed in chlorination. X-ray diffraction data showed that the obtained carbon nitride powders were amorphous, which was in good agreement with transmission electron microscope analysis. The composition and structure of carbon nitride powders were analyzed by employing Fourier transform infrared spectroscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy. Results indicated that disorder structure was most likely for the carbon nitride powders and the N content depended greatly on the chlorination temperature. Thermal analysis in flowing N 2 indicated that the mass loss started from 300 deg. C and the complete decomposition occurred at around 650 deg. C, confirming the low thermal stability of the carbon nitride material.

Anomalous composition dependence of the band gap pressure coefficients in In-containing nitride semiconductors

DEFF Research Database (Denmark)

Gorczyca, I.; Kamińska, A.; Staszczak, G.

2010-01-01

The pressure-induced changes in the electronic band structures of In-containing nitride alloys, InxGa1-xN and InxAl1-xN are examined experimentally as well as by ab initio calculations. It is found that the band gap pressure coefficients, dEg/dp, exhibit very large bowing with x, and calculations...

Mesoporous WN/WO3-Composite Nanosheets for the Chemiresistive Detection of NO2 at Room Temperature

OpenAIRE

Fengdong Qu; Bo He; Rohiverth Guarecuco; Minghui Yang

2016-01-01

Composite materials, which can optimally use the advantages of different materials, have been studied extensively. Herein, hybrid tungsten nitride and oxide (WN/WO3) composites were prepared through a simple aqueous solution route followed by nitriding in NH3, for application as novel sensing materials. We found that the introduction of WN can improve the electrical properties of the composites, thus improving the gas sensing properties of the composites when compared with bare WO3. The highe...

Toughening effect of multi-walled boron nitride nanotubes and their influence on the sintering behaviour of 3Y-TZP zirconia ceramics

Czech Academy of Sciences Publication Activity Database

Tatarko, Peter; Grasso, S.; Chlup, Zdeněk; Porwal, H.; Kasiarova, M.; Dlouhý, Ivo; Reece, M.J.

2014-01-01

Roč. 34, č. 7 (2014), s. 1829-1843 ISSN 0955-2219 EU Projects: European Commission(XE) 264526 - GLACERCO Institutional support: RVO:68081723 Keywords : Zirconia * Boron nitride nanotubes * Composite * Spark plasma sintering * Toughening mechanism Subject RIV: JI - Composite Materials Impact factor: 2.947, year: 2014

Plasma nitriding - an eco friendly surface hardening process

International Nuclear Information System (INIS)

Mukherjee, S.

2015-01-01

Surface hardening is a process of heating the metal such that the surface gets only hardened. This process is adopted for many components like gears, cams, and crankshafts, which desire high hardness on the outer surface with a softer core to withstand the shocks. So, to attain such properties processes like carburising, nitriding, flame hardening and induction hardening are employed. Amongst these processes nitriding is the most commonly used process by many industries. In nitriding process the steel material is heated to a temperature of around 550 C and then exposed to atomic nitrogen. This atomic nitrogen reacts with iron and other alloying elements and forms nitrides, which are very hard in nature. By this process both wear resistance and hardness of the product can be increased. The atomic nitrogen required for this process can be obtained using ammonia gas (gas nitriding), cyanide based salt bath (liquid nitriding) and plasma medium (plasma nitriding). However, plasma nitriding has recently received considerable industrial interest owing to its characteristic of faster nitrogen penetration, short treatment time, low process temperature, minimal distortion, low energy use and easier control of layer formation compared with conventional techniques such as gas and liquid nitriding. This process can be used for all ferrous materials including stainless steels. Plasma nitriding is carried out using a gas mixture of nitrogen and hydrogen gas at sub atmospheric pressures hence, making it eco-friendly in nature. Plasma nitriding allows modification of the surface layers and hardness profiles by changing the gas mixture and temperature. The wide applicable temperature range enables a multitude of applications, beyond the possibilities of gas or salt bath processes. This has led to numerous applications of this process in industries such as the manufacture of machine parts for plastics and food processing, packaging and tooling as well as pumps and hydraulic, machine

Compositional dependence thermal and optical properties of a novel germanate glass

International Nuclear Information System (INIS)

El-Rabaie, S.; Taha, T.A.; Higazy, A.A.

2014-01-01

A series of zinc lithium germanate glasses of the composition (45−x)Li 2 O–xZnO–55GeO 2 have been synthesized via melt quenching technique. Dependencies of their thermal and optical properties on composition were investigated. It is found that the gradual replacement of Li 2 O by ZnO, decreases the glass transition temperature from 430 to 280 °C and increases the thermal stability (ΔT) of the studied glasses. The optical band gap E opt also decreases from 2.31 to 1.40 eV with increasing the mole content of ZnO

Advancing liquid metal reactor technology with nitride fuels

International Nuclear Information System (INIS)

Lyon, W.F.; Baker, R.B.; Leggett, R.D.; Matthews, R.B.

1991-08-01

A review of the use of nitride fuels in liquid metal fast reactors is presented. Past studies indicate that both uranium nitride and uranium/plutonium nitride possess characteristics that may offer enhanced performance, particularly in the area of passive safety. To further quantify these effects, the analysis of a mixed-nitride fuel system utilizing the geometry and power level of the US Advanced Liquid Metal Reactor as a reference is described. 18 refs., 2 figs., 2 tabs

Rebar graphene from functionalized boron nitride nanotubes.

Science.gov (United States)

Li, Yilun; Peng, Zhiwei; Larios, Eduardo; Wang, Gunuk; Lin, Jian; Yan, Zheng; Ruiz-Zepeda, Francisco; José-Yacamán, Miguel; Tour, James M

2015-01-27

The synthesis of rebar graphene on Cu substrates is described using functionalized boron nitride nanotubes (BNNTs) that were annealed or subjected to chemical vapor deposition (CVD) growth of graphene. Characterization shows that the BNNTs partially unzip and form a reinforcing bar (rebar) network within the graphene layer that enhances the mechanical strength through covalent bonds. The rebar graphene is transferrable to other substrates without polymer assistance. The optical transmittance and conductivity of the hybrid rebar graphene film was tested, and a field effect transistor was fabricated to explore its electrical properties. This method of synthesizing 2D hybrid graphene/BN structures should enable the hybridization of various 1D nanotube and 2D layered structures with enhanced mechanical properties.

Waveguide silicon nitride grating coupler

Science.gov (United States)

Litvik, Jan; Dolnak, Ivan; Dado, Milan

2016-12-01

Grating couplers are one of the most used elements for coupling of light between optical fibers and photonic integrated components. Silicon-on-insulator platform provides strong confinement of light and allows high integration. In this work, using simulations we have designed a broadband silicon nitride surface grating coupler. The Fourier-eigenmode expansion and finite difference time domain methods are utilized in design optimization of grating coupler structure. The fully, single etch step grating coupler is based on a standard silicon-on-insulator wafer with 0.55 μm waveguide Si3N4 layer. The optimized structure at 1550 nm wavelength yields a peak coupling efficiency -2.6635 dB (54.16%) with a 1-dB bandwidth up to 80 nm. It is promising way for low-cost fabrication using complementary metal-oxide- semiconductor fabrication process.

Exploring electrolyte preference of vanadium nitride supercapacitor electrodes

Energy Technology Data Exchange (ETDEWEB)

Wang, Bo; Chen, Zhaohui; Lu, Gang [Department of Electrical Engineering and Automation, Luoyang Institute of Science and Technology, Luoyang 471023 (China); Wang, Tianhu [School of Electrical Information and Engineering, Jiangsu University of Technology, Changzhou 213001 (China); Ge, Yunwang, E-mail: ywgelit@126.com [Department of Electrical Engineering and Automation, Luoyang Institute of Science and Technology, Luoyang 471023 (China)

2016-04-15

Highlights: • Hierarchical VN nanostructures were prepared on graphite foam. • Electrolyte preference of VN supercapacitor electrodes was explored. • VN showed better capacitive property in organic and alkaline electrolytes than LiCl. - Abstract: Vanadium nitride hierarchical nanostructures were prepared through an ammonia annealing procedure utilizing vanadium pentoxide nanostructures grown on graphite foam. The electrochemical properties of hierarchical vanadium nitride was tested in aqueous and organic electrolytes. As a result, the vanadium nitride showed better capacitive energy storage property in organic and alkaline electrolytes. This work provides insight into the charge storage process of vanadium nitride and our findings can shed light on other transition metal nitride-based electrochemical energy storage systems.

Boron Nitride Nanotube: Synthesis and Applications

Science.gov (United States)

Tiano, Amanda L.; Park, Cheol; Lee, Joseph W.; Luong, Hoa H.; Gibbons, Luke J.; Chu, Sang-Hyon; Applin, Samantha I.; Gnoffo, Peter; Lowther, Sharon; Kim, Hyun Jung;

Synthesis and Optical Properties of Au-Ag Alloy Nanoclusters with Controlled Composition

Directory of Open Access Journals (Sweden)

J. F. Sánchez-Ramírez

2008-01-01

Full Text Available Colloidal solid-solution-like Au-Ag alloy nanoclusters of different compositions were synthesized through citrate reduction of mixed metal ions of low concentrations, without using any other protective or capping agents. Optical absorption of the alloy nanoclusters was studied both theoretically and experimentally. The position of the surface plasmon resonance (SPR absorption band of the nanoclusters could be tuned from 419 nm to 521 nm through the variation of their composition. Considering effective dielectric constant of the alloy, optical absorption spectra for the nanoclusters were calculated using Mie theory, and compared with the experimentally obtained spectra. Theoretically obtained optical spectra well resembled the experimental spectra when the true size distribution of the nanoparticles was considered. High-resolution transmission electron microscopy (HREM, high-angle annular dark field (HAADF imaging, and energy dispersive spectroscopy (EDS revealed the true alloy nature of the nanoparticles with nominal composition being preserved. The synthesis technique can be extended to other bimetallic alloy nanoclusters containing Ag.

Modeling the Gas Nitriding Process of Low Alloy Steels

Science.gov (United States)

Yang, M.; Zimmerman, C.; Donahue, D.; Sisson, R. D.

2013-07-01

The effort to simulate the nitriding process has been ongoing for the last 20 years. Most of the work has been done to simulate the nitriding process of pure iron. In the present work a series of experiments have been done to understand the effects of the nitriding process parameters such as the nitriding potential, temperature, and time as well as surface condition on the gas nitriding process for the steels. The compound layer growth model has been developed to simulate the nitriding process of AISI 4140 steel. In this paper the fundamentals of the model are presented and discussed including the kinetics of compound layer growth and the determination of the nitrogen diffusivity in the diffusion zone. The excellent agreements have been achieved for both as-washed and pre-oxided nitrided AISI 4140 between the experimental data and simulation results. The nitrogen diffusivity in the diffusion zone is determined to be constant and only depends on the nitriding temperature, which is ~5 × 10-9 cm2/s at 548 °C. It proves the concept of utilizing the compound layer growth model in other steels. The nitriding process of various steels can thus be modeled and predicted in the future.

Synthesis of Uranium nitride powders using metal uranium powders

International Nuclear Information System (INIS)

Yang, Jae Ho; Kim, Dong Joo; Oh, Jang Soo; Rhee, Young Woo; Kim, Jong Hun; Kim, Keon Sik

2012-01-01

Uranium nitride (UN) is a potential fuel material for advanced nuclear reactors because of their high fuel density, high thermal conductivity, high melting temperature, and considerable breeding capability in LWRs. Uranium nitride powders can be fabricated by a carbothermic reduction of the oxide powders, or the nitriding of metal uranium. The carbothermic reduction has an advantage in the production of fine powders. However it has many drawbacks such as an inevitable engagement of impurities, process burden, and difficulties in reusing of expensive N 15 gas. Manufacturing concerns issued in the carbothermic reduction process can be solved by changing the starting materials from oxide powder to metals. However, in nitriding process of metal, it is difficult to obtain fine nitride powders because metal uranium is usually fabricated in the form of bulk ingots. In this study, a simple reaction method was tested to fabricate uranium nitride powders directly from uranium metal powders. We fabricated uranium metal spherical powder and flake using a centrifugal atomization method. The nitride powders were obtained by thermal treating those metal particles under nitrogen containing gas. We investigated the phase and morphology evolutions of powders during the nitriding process. A phase analysis of nitride powders was also a part of the present work

The oxidation of titanium nitride- and silicon nitride-coated stainless steel in carbon dioxide environments

International Nuclear Information System (INIS)

Mitchell, D.R.G.; Stott, F.H.

1992-01-01

A study has been undertaken into the effects of thin titanium nitride and silicon nitride coatings, deposited by physical vapour deposition and chemical vapour deposition processes, on the oxidation resistance of 321 stainless steel in a simulated advanced gas-cooled reactor carbon dioxide environment for long periods at 550 o C and 700 o C under thermal-cycling conditions. The uncoated steel contains sufficient chromium to develop a slow-growing chromium-rich oxide layer at these temperatures, particularly if the surfaces have been machine-abraded. Failure of this layer in service allows formation of less protective iron oxide-rich scales. The presence of a thin (3-4 μm) titanium nitride coating is not very effective in increasing the oxidation resistance since the ensuing titanium oxide scale is not a good barrier to diffusion. Even at 550 o C, iron oxide-rich nodules are able to develop following relatively rapid oxidation and breakdown of the coating. At 700 o C, the coated specimens oxidize at relatively similar rates to the uncoated steel. A thin silicon nitride coating gives improved oxidation resistance, with both the coating and its slow-growing oxide being relatively electrically insulating. The particular silicon nitride coating studied here was susceptible to spallation on thermal cycling, due to an inherently weak coating/substrate interface. (Author)

On the difference between optically and electrically determined resistivity of ultra-thin titanium nitride films

NARCIS (Netherlands)

Van Hao, B.; Kovalgin, Alexeij Y.; Wolters, Robertus A.M.

2013-01-01

This work reports on the determination and comparison of the resistivity of ultra-thin atomic layer deposited titanium nitride films in the thickness range 0.65–20 nm using spectroscopic ellipsometry and electrical test structures. We found that for films thicker than 4 nm, the resistivity values

Surface modification of titanium by plasma nitriding

Directory of Open Access Journals (Sweden)

Kapczinski Myriam Pereira

2003-01-01

Full Text Available A systematic investigation was undertaken on commercially pure titanium submitted to plasma nitriding. Thirteen different sets of operational parameters (nitriding time, sample temperature and plasma atmosphere were used. Surface analyses were performed using X-ray diffraction, nuclear reaction and scanning electron microscopy. Wear tests were done with stainless steel Gracey scaler, sonic apparatus and pin-on-disc machine. The obtained results indicate that the tribological performance can be improved for samples treated with the following conditions: nitriding time of 3 h; plasma atmosphere consisting of 80%N2+20%H2 or 20%N2+80%H2; sample temperature during nitriding of 600 or 800 degreesC.

Demonstration of slot-waveguide structures on silicon nitride / silicon oxide platform.

Science.gov (United States)

Barrios, C A; Sánchez, B; Gylfason, K B; Griol, A; Sohlström, H; Holgado, M; Casquel, R

2007-05-28

We report on the first demonstration of guiding light in vertical slot-waveguides on silicon nitride/silicon oxide material system. Integrated ring resonators and Fabry-Perot cavities have been fabricated and characterized in order to determine optical features of the slot-waveguides. Group index behavior evidences guiding and confinement in the low-index slot region at O-band (1260-1370nm) telecommunication wavelengths. Propagation losses of <20 dB/cm have been measured for the transverse-electric mode of the slot-waveguides.

Progress in efficient doping of high aluminum-containing group III-nitrides

Science.gov (United States)

Liang, Y.-H.; Towe, E.

2018-03-01

The group III-nitride (InN, GaN, and AlN) class of semiconductors has become one of two that are critical to a number of technologies in modern life—the other being silicon. Light-emitting diodes made from (In,Ga)N, for example, dominate recent innovations in general illumination and signaling. Even though the (In,Ga)N materials system is fairly well established and widely used in advanced devices, challenges continue to impede development of devices that include aluminum-containing nitride films such as (Al,Ga)N. The main difficulty is efficient doping of films with aluminum-rich compositions; the problem is particularly severe for p-type doping, which is essential for Ohmic contacts to bipolar device structures. This review briefly summarizes the fundamental issues related to p-type doping, and then discusses a number of approaches that are being pursued to resolve the doping problem or for circumventing the need for p-type doping. Finally, we discuss an approach to doping under liquid-metal-enabled growth by molecular beam epitaxy. Recent results from a number of groups appear to indicate that p-type doping of nitride films under liquid-metal-enabled growth conditions might offer a solution to the doping problem—at least for materials grown by molecular beam epitaxy.

Doped indium nitride thin film by sol-gel spin coating method

Science.gov (United States)

Lee, Hui San; Ng, Sha Shiong; Yam, Fong Kwong

2017-12-01

In this study, magnesium doped indium nitride (InN:Mg) thin films grown on silicon (100) substrate were prepared via sol-gel spin coating method followed by nitridation process. A custom-made tube furnace was used to perform the nitridation process. Through this method, the low dissociation temperature issue of InN:Mg thin films can be solved. The deposited InN:Mg thin films were investigated using various techniques. The X-rays diffraction results revealed that two intense diffraction peaks correspond to wurtzite structure InN (100), and InN (101) were observed at 29° and 33.1° respectively. Field emission scanning electron microscopy images showed that the surface of the films exhibits densely packed grains. The elemental composition of the deposited thin films was analyzed using energy dispersive X-rays spectroscopy. The detected atomic percentages for In, N, and Mg were 43.22 %, 3.28 %, and 0.61 % respectively. The Raman spectra showed two Raman- and infrared-active modes of E2 (High) and A1 (LO) of the wurtzite InN. The band gap obtained from the Tauc plot showed around 1.74 eV. Lastly, the average surface roughness measured by AFM was around 0.133 µm.

Optical Properties and Surface Morphology of Nano-composite PMMA: TiO2 Thin Films

International Nuclear Information System (INIS)

Lyly Nyl Ismail; Ahmad Fairoz Aziz; Habibah Zulkefle

2011-01-01

There are two nano-composite PMMA: TiO 2 solutions were prepared in this research. First solution is nano-composite PMMA commercially available TiO 2 nanopowder and the second solution is nano-composite PMMA with self-prepared TiO 2 powder. The self-prepared TiO 2 powder is obtained by preparing the TiO 2 sol-gel. Solvo thermal method were used to dry the TiO 2 sol-gel and obtained TiO 2 crystal. Ball millers were used to grind the TiO 2 crystal in order to obtained nano sized powder. Triton-X was used as surfactant to stabilizer the composite between PMMA: TiO 2 . Besides comparing the nano-composite solution, we also studied the effect of the thin films thickness on the optical properties and surface morphology of the thin films. The thin films were deposited by sol-gel spin coating method on glass substrates. The optical properties and surface characterization were measured with UV-VIS spectrometer equipment and atomic force microscopy (AFM). The result showed that nano-composite PMMA with self prepared TiO 2 give high optical transparency than nano-composite PMMA with commercially available TiO 2 nano powder. The results also indicate as the thickness is increased the optical transparency are decreased. Both AFM images showed that the agglomerations of TiO 2 particles are occurred on the thin films and the surface roughness is increased when the thickness is increased. High agglomeration particles exist in the AFM images for nano-composite PMMA: TiO 2 with TiO 2 nano powder compare to the other nano-composite solution. (author)

Electrochemical Solution Growth of Magnetic Nitrides

Energy Technology Data Exchange (ETDEWEB)

Monson, Todd C. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Pearce, Charles [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

2014-10-01

Magnetic nitrides, if manufactured in bulk form, would provide designers of transformers and inductors with a new class of better performing and affordable soft magnetic materials. According to experimental results from thin films and/or theoretical calculations, magnetic nitrides would have magnetic moments well in excess of current state of the art soft magnets. Furthermore, magnetic nitrides would have higher resistivities than current transformer core materials and therefore not require the use of laminates of inactive material to limit eddy current losses. However, almost all of the magnetic nitrides have been elusive except in difficult to reproduce thin films or as inclusions in another material. Now, through its ability to reduce atmospheric nitrogen, the electrochemical solution growth (ESG) technique can bring highly sought after (and previously inaccessible) new magnetic nitrides into existence in bulk form. This method utilizes a molten salt as a solvent to solubilize metal cations and nitrogen ions produced electrochemically and form nitrogen compounds. Unlike other growth methods, the scalable ESG process can sustain high growth rates (~mm/hr) even under reasonable operating conditions (atmospheric pressure and 500 °C). Ultimately, this translates into a high throughput, low cost, manufacturing process. The ESG process has already been used successfully to grow high quality GaN. Below, the experimental results of an exploratory express LDRD project to access the viability of the ESG technique to grow magnetic nitrides will be presented.

Solid composite electrolytes for lithium batteries

Science.gov (United States)

Kumar, Binod; Scanlon, Jr., Lawrence G.

2000-01-01

Solid composite electrolytes are provided for use in lithium batteries which exhibit moderate to high ionic conductivity at ambient temperatures and low activation energies. In one embodiment, a ceramic-ceramic composite electrolyte is provided containing lithium nitride and lithium phosphate. The ceramic-ceramic composite is also preferably annealed and exhibits an activation energy of about 0.1 eV.

Study of the dissolution of uranium nitrides in nitric acid by measuring the isotope ratios, 15N/14N, of the formed products

International Nuclear Information System (INIS)

Hadibi-Olschewski, Nathalie

1991-01-01

The aim of this study was to investigate the dissolution behavior of nitride fuels in nitric acid. The use of nitride fuels in nuclear reactor has many advantages compared with the oxide fuels. One problem in employing nitrides as fuels is the formation of radio-toxic 14 C upon irradiation of natural nitrogen ( 14 N:99.64 pc, 15 N:0.36 pc) in a nuclear reactor ( 14 N (n,p) 14 C reaction). The use of 15 N-enriched fuels avoids these drawbacks. This study was undertaken so as to better understand the mechanisms of the dissolution process and also to follow the distribution of the expensive nitrogen isotope 15 N from the point of view of its behaviour during the recycling process. This study is based on previous work, where the evolution of the nitrogen compounds formed during the dissolution was measured as a function of time for different dissolution parameters. Using 15 N-enriched uranium nitrides or 15 N-enriched nitric acid, two methods were developed to study the influence of the dissolution parameters, nitric acid temperature and concentration, on the 15 N/ 14 N ratios of the nitrogen, nitrogen oxides and ammonium ions utilising a coupled gas-chromatograph/mass spectrometer. The main results are: - similar isotopic composition for NH 4 + and UN; - mixed 14 N/ 15 N composition for N 2 and N 2 O; - similar isotopic composition for NO, NO 2 and HNO 3 ; - no influence of the dissolution parameters on the isotopic composition of the products; an exception maybe made for the N 2 case, which contains more 15 N with increasing acidity and temperature. This work confirms that the first dissolution step is the oxidation of UN with HNO 3 to form NH 4 + and HNO 2 and that HNO 2 has a catalytic role in the dissolution to form other products. And we can conclude that to recycle 15 N, the ammonium ions must be recycled, at least for the case where nitrides are dissolved directly in HNO 3 . (author) [fr

Simulation of the Nitriding Process

Science.gov (United States)

Krukovich, M. G.

2004-01-01

Simulation of the nitriding process makes it possible to solve many practical problems of process control, prediction of results, and development of new treatment modes and treated materials. The presented classification systematizes nitriding processes and processes based on nitriding, enables consideration of the theory and practice of an individual process in interrelation with other phenomena, outlines ways for intensification of various process variants, and gives grounds for development of recommendations for controlling the structure and properties of the obtained layers. The general rules for conducting the process and formation of phases in the layer and properties of the treated surfaces are used to create a prediction computational model based on analytical, numerical, and empirical approaches.

The anharmonic phonon decay rate in group-III nitrides

International Nuclear Information System (INIS)

Srivastava, G P

2009-01-01

Measured lifetimes of hot phonons in group-III nitrides have been explained theoretically by considering three-phonon anharmonic interaction processes. The basic ingredients of the theory include full phonon dispersion relations obtained from the application of an adiabatic bond charge model and crystal anharmonic potential within the isotropic elastic continuum model. The role of various decay routes, such as Klemens, Ridley, Vallee-Bogani and Barman-Srivastava channels, in determining the lifetimes of the Raman active zone-centre longitudinal optical (LO) modes in BN (zincblende structure) and A 1 (LO) modes in AlN, GaN and InN (wurtzite structure) has been quantified.

Lattice dynamics and electron/phonon interactions in epitaxial transition-metal nitrides

Science.gov (United States)

Mei, Antonio Rodolph Bighetti

the films are completely dense with smooth surfaces (roughness = 1.3 nm, consistent with atomic-force microscopy analyses). Based upon temperature-dependent electronic transport measurements, epitaxial ZrN/MgO(001) layers have a room-temperature resistivity rho 300K of 12.0 muO-cm, a temperature coefficient of resistivity between 100 and 300 K of 5.6x10-8 O-cm K -1, a residual resistivity rhoo below 30 K of 0.78 muO-cm (corresponding to a residual resistivity ratio rho300K/rho 15K = 15), and the layers exhibit a superconducting transition temperature Tc = 10.4 K. The relatively high residual resistivity ratio, combined with long in-plane and out-of-plane x-ray coherence lengths, xi|| = 18 nm and xi⊥ = 161 nm, indicates high crystalline quality with low mosaicity. The reflectance of ZrN(001), as determined by variable-angle spectroscopic ellipsometry, decreases slowly from 95% at 1 eV to 90% at 2 eV with a reflectance edge at 3.04 eV. Interband transitions dominate the dielectric response above 2 eV. The ZrN(001) nanoindentation hardness and modulus are 22.7+/-1.7 and 450+/-25 GPa. Transport electron/phonon coupling parameters and Eliashberg spectral functions alphatr2F(ho) are determined for Group-IV TM nitrides TiN, ZrN, and HfN, and the rare-earth (RE) nitride CeN using an inversion procedure based upon temperature-dependent (4 electron/phonon coupling parameters lambdatr vary from 1.11 for ZrN to 0.82 for HfN, 0.73 for TiN, and 0.44 for CeN. The small variation in lambda tr among the TM nitrides and the weak coupling in CeN are consistent with measured Tc values: 10.4 (ZrN), 9.18 (HfN), 5.35 (TiN), and electron/phonon coupling in conventional superconductors. Spectral peaks in alpha2F(ho), corresponding to regions in energy-space for which electrons couple to acoustic hoac and optical ho op phonon modes, are centered at ho ac = 33 and hoop = 57 meV for TiN, 25 and 60 meV for ZrN, 18 and 64 meV for HfN, and 21 and 39 meV for CeN. The acoustic modes soften with

Characterization of plasma nitrided layers produced on sintered iron

Directory of Open Access Journals (Sweden)

Marcos Alves Fontes

2014-07-01

Full Text Available Plasma nitriding is a thermo-physical-chemical treatment process, which promotes surface hardening, caused by interstitial diffusion of atomic nitrogen into metallic alloys. In this work, this process was employed in the surface modification of a sintered ferrous alloy. Scanning electron microscopy (SEM, X-ray diffraction (XRD analyses, and wear and microhardness tests were performed on the samples submitted to ferrox treatment and plasma nitriding carried out under different conditions of time and temperature. The results showed that the nitride layer thickness is higher for all nitrided samples than for ferrox treated samples, and this layer thickness increases with nitriding time and temperature, and temperature is a more significant variable. The XRD analysis showed that the nitrided layer, for all samples, near the surface consists in a mixture of γ′-Fe4N and ɛ-Fe3N phases. Both wear resistance and microhardness increase with nitriding time and temperature, and temperature influences both the characteristics the most.

Combined angle-resolved X-ray photoelectron spectroscopy, density functional theory and kinetic study of nitridation of gallium arsenide

Science.gov (United States)

Mehdi, H.; Monier, G.; Hoggan, P. E.; Bideux, L.; Robert-Goumet, C.; Dubrovskii, V. G.

2018-01-01

The high density of interface and surface states that cause the strong Fermi pinning observed on GaAs surfaces can be reduced by depositing GaN ultra-thin films on GaAs. To further improve this passivation, it is necessary to investigate the nitridation phenomena by identifying the distinct steps occurring during the process and to understand and quantify the growth kinetics of GaAs nitridation under different conditions. Nitridation of the cleaned GaAs substrate was performed using N2 plasma source. Two approaches have been combined. Firstly, an AR-XPS (Angle Resolved X-ray Photoelectron Spectroscopy) study is carried out to determine the chemical environments of the Ga, As and N atoms and the composition depth profile of the GaN thin film which allow us to summarize the nitridation process in three steps. Moreover, the temperature and time treatment have been investigated and show a significant impact on the formation of the GaN layer. The second approach is a refined growth kinetic model which better describes the GaN growth as a function of the nitridation time. This model clarifies the exchange mechanism of arsenic with nitrogen atoms at the GaN/GaAs interface and the phenomenon of quasi-saturation of the process observed experimentally.

Optical properties study of nano-composite filled D shape photonic crystal fibre

Science.gov (United States)

Udaiyakumar, R.; Mohamed Junaid, K. A.; Janani, T.; Maheswar, R.; Yupapin, P.; Amiri, I. S.

2018-06-01

With the nano-composite materials gaining momentum in the optical field, a new nano-composite filled D shape Photonic Crystal Fiber (PCF) is designed and the various optical properties are investigated with help of Finite Element Method. In the proposed structure the D-shape PCF is made up of silica with embedded silver nanoparticles and air holes are distributed along the fibre. The designed fibre shows various optical properties such as dispersion, birefringence, beat length and loss with respect to wavelength and compared with different filling factor like 0.1, 0.3 and 0.5. From our estimation and comparative analysis, it has been proved that the fibre loss has been decreased with increasing filling factor. Further this also showed flat dispersion at maximum filling factor.

Fatigue Damage Monitoring of a Composite Step Lap Joint Using Distributed Optical Fibre Sensors

Science.gov (United States)

Wong, Leslie; Chowdhury, Nabil; Wang, John; Chiu, Wing Kong; Kodikara, Jayantha

2016-01-01

Over the past few decades, there has been a considerable interest in the use of distributed optical fibre sensors (DOFS) for structural health monitoring of composite structures. In aerospace-related work, health monitoring of the adhesive joints of composites has become more significant, as they can suffer from cracking and delamination, which can have a significant impact on the integrity of the joint. In this paper, a swept-wavelength interferometry (SWI) based DOFS technique is used to monitor the fatigue in a flush step lap joint composite structure. The presented results will show the potential application of distributed optical fibre sensor for damage detection, as well as monitoring the fatigue crack growth along the bondline of a step lap joint composite structure. The results confirmed that a distributed optical fibre sensor is able to enhance the detection of localised damage in a structure. PMID:28773496

Light propagation studies on laser modified waveguides using scanning near-field optical microscopy

DEFF Research Database (Denmark)

Borrise, X.; Berini, Abadal Gabriel; Jimenez, D.

2001-01-01

By means of direct laser writing on Al, a new method to locally modify optical waveguides is proposed. This technique has been applied to silicon nitride waveguides, allowing modifications of the optical propagation along the guide. To study the formed structures, a scanning near-held optical mic...

Evaluations of parameters peculiar to the third group nitrides: BN, AIN, GaN and InN

CERN Document Server

Davydov, S Y

2002-01-01