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Sample records for nio oxide film

  1. Thickness dependent ferromagnetism in thermally decomposed NiO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ravikumar, Patta; Kisan, Bhagaban; Perumal, Alagarsamy, E-mail: perumal@iitg.ernet.in

    2016-11-15

    We report the effects of film thickness, annealing temperature and annealing environments on thermal decomposition behavior and resulting magnetic properties of NiO (t=50–300 nm) thin films. All the NiO films were prepared directly on thermally oxidized Si at ambient temperature using magnetron sputtering technique and post annealed at different temperatures (T{sub A}) under vacuum and oxygen atmospheres. As-deposited films exhibit face centered cubic structure with large lattice constant due to strain induced during sputtering process. With increasing T{sub A}, the lattice constant decreases due to the release of strain and thickness dependent thermal decomposition reaction of NiO into Ni has been observed for the NiO films annealed at 500 °C under vacuum condition. As a result, the antiferromagnetic nature of the as-deposited NiO films transforms into ferromagnetic one with dominant thickness dependent ferromagnetic behavior at room temperature. In addition, the existence of both Ni and NiO phases in the annealed NiO films shows noticeable exchange bias under field cooling condition. The behavior of thermal decomposition was not observed for the NiO films annealed under oxygen condition which results in no detectable change in the magnetic properties. The observed results are discussed on the basis of thickness dependent thermal decomposition in NiO films with increasing T{sub A} and changing annealing conditions. - Highlights: • Preparation of highly strained single layer NiO films with different thicknesses. • Study the effects of annealing under different environments on crystal structure. • Understanding the origin of thickness dependent thermal decomposition reaction. • Investigate the role of thermal decomposition reaction on the magnetic properties. • Study the interaction between NiO and Ni phases on the exchange bias mechanism.

  2. Surface properties of nanostructured NiO undergoing electrochemical oxidation in 3-methoxy-propionitrile

    Energy Technology Data Exchange (ETDEWEB)

    Bonomo, Matteo [Department of Chemistry, University of Rome “La Sapienza”, Piazzale Aldo Moro 5, 00185 Rome (Italy); Marrani, Andrea Giacomo, E-mail: andrea.marrani@uniroma1.it [Department of Chemistry, University of Rome “La Sapienza”, Piazzale Aldo Moro 5, 00185 Rome (Italy); Novelli, Vittoria [Department of Chemistry, University of Rome “La Sapienza”, Piazzale Aldo Moro 5, 00185 Rome (Italy); Awais, Muhammad [Department of Industrial Engineering, “King Abdulaziz” University, Rabigh (Saudi Arabia); Solar Energy Conversion Strategic Research Cluster, University College Dublin (UCD), Belfield, Dublin 4 (Ireland); Dowling, Denis P. [Solar Energy Conversion Strategic Research Cluster, University College Dublin (UCD), Belfield, Dublin 4 (Ireland); School of Mechanical and Materials Engineering, University College Dublin (UCD), Belfield, Dublin 4 (Ireland); Vos, Johannes G. [School of Chemical Sciences, Dublin City University (DCU), Glasnevin, Dublin 9 (Ireland); Dini, Danilo [Department of Chemistry, University of Rome “La Sapienza”, Piazzale Aldo Moro 5, 00185 Rome (Italy); Solar Energy Conversion Strategic Research Cluster, University College Dublin (UCD), Belfield, Dublin 4 (Ireland)

    2017-05-01

    Highlights: • NiO porous thin films were prepared via RDS technique. • NiO electrodes were characterized in a nitrile based electrochemical cell. • NiO electrodes were studied by means of XPS. • The XP spectra excluded the formation of phases other than NiO. • The presence of ClO{sub 4}{sup −} as charge balancing species was evidenced. - Abstract: Nanostructured nickel oxide (NiO) was deposited in the configuration of thin film (thickness, l = 2–6 μm) onto fluorine-doped tin oxide (FTO) substrates via plasma-assisted rapid discharge sintering (RDS). Electrochemical cycling of RDS NiO in 3-methoxy-propionitrile (3-MPN) revealed two characteristic peaks of NiO oxidation which were associated to the surface-confined redox processes Ni(II) → Ni(III) and Ni(III) → Ni(IV). Grazing angle X-ray photoelectron spectroscopy (XPS) was conducted ex-situ on NiO electrodes in both pristine and oxidized states. Oxidized NiO samples for XPS experiments were obtained in the potentiostatic mode through the polarization of NiO at its two characteristic potentials of oxidation. The XPS analysis allowed to ascertain the electronic structure of the nanoporous NiO framework, and verify the adsorption of perchlorate and chloride anions onto NiO surface due to the compensation of the charge stored in oxidized NiO. XPS also revealed that the spectrum within the region characteristic of Ni 2p ionization does not vary considerably with the state of charge of the nickel centres. This finding is in evident contrast to what has been observed for the same system when it undergoes electrochemical oxidation in aqueous electrolyte.

  3. Surface properties of nanostructured NiO undergoing electrochemical oxidation in 3-methoxy-propionitrile

    International Nuclear Information System (INIS)

    Bonomo, Matteo; Marrani, Andrea Giacomo; Novelli, Vittoria; Awais, Muhammad; Dowling, Denis P.; Vos, Johannes G.; Dini, Danilo

    2017-01-01

    Highlights: • NiO porous thin films were prepared via RDS technique. • NiO electrodes were characterized in a nitrile based electrochemical cell. • NiO electrodes were studied by means of XPS. • The XP spectra excluded the formation of phases other than NiO. • The presence of ClO 4 − as charge balancing species was evidenced. - Abstract: Nanostructured nickel oxide (NiO) was deposited in the configuration of thin film (thickness, l = 2–6 μm) onto fluorine-doped tin oxide (FTO) substrates via plasma-assisted rapid discharge sintering (RDS). Electrochemical cycling of RDS NiO in 3-methoxy-propionitrile (3-MPN) revealed two characteristic peaks of NiO oxidation which were associated to the surface-confined redox processes Ni(II) → Ni(III) and Ni(III) → Ni(IV). Grazing angle X-ray photoelectron spectroscopy (XPS) was conducted ex-situ on NiO electrodes in both pristine and oxidized states. Oxidized NiO samples for XPS experiments were obtained in the potentiostatic mode through the polarization of NiO at its two characteristic potentials of oxidation. The XPS analysis allowed to ascertain the electronic structure of the nanoporous NiO framework, and verify the adsorption of perchlorate and chloride anions onto NiO surface due to the compensation of the charge stored in oxidized NiO. XPS also revealed that the spectrum within the region characteristic of Ni 2p ionization does not vary considerably with the state of charge of the nickel centres. This finding is in evident contrast to what has been observed for the same system when it undergoes electrochemical oxidation in aqueous electrolyte.

  4. Effect of substrate temperature and oxygen partial pressure on RF sputtered NiO thin films

    Science.gov (United States)

    Cheemadan, Saheer; Santhosh Kumar, M. C.

    2018-04-01

    Nickel oxide (NiO) thin films were deposited by RF sputtering process and the physical properties were investigated for varying substrate temperatures and oxygen partial pressure. The variation of the crystallographic orientation and microstructure of the NiO thin films with an increase in substrate temperature were studied. It was observed that NiO thin films deposited at 350 °C shows relatively good crystalline characteristics with a preferential orientation along (111) plane. With the optimum substrate temperature of 350 °C, the NiO thin films were deposited under various oxygen partial pressures at the same experimental conditions. The structural, optical and electrical properties of NiO thin films under varying oxygen partial pressure of 10%–50% were investigated. From XRD it is clear that the films prepared in the pure argon atmosphere were amorphous while the films in oxygen partial pressure exhibited polycrystalline NiO phase. SEM and AFM investigations unveil that the higher substrate temperature improves the microstructure of the thin films. It is revealed that the NiO thin films deposited at oxygen partial pressure of 40% and a substrate temperature of 350 °C, showed higher electrical conductivity with p-type characteristics.

  5. Surface properties of nanostructured NiO undergoing electrochemical oxidation in 3-methoxy-propionitrile

    Science.gov (United States)

    Bonomo, Matteo; Marrani, Andrea Giacomo; Novelli, Vittoria; Awais, Muhammad; Dowling, Denis P.; Vos, Johannes G.; Dini, Danilo

    2017-05-01

    Nanostructured nickel oxide (NiO) was deposited in the configuration of thin film (thickness, l = 2-6 μm) onto fluorine-doped tin oxide (FTO) substrates via plasma-assisted rapid discharge sintering (RDS). Electrochemical cycling of RDS NiO in 3-methoxy-propionitrile (3-MPN) revealed two characteristic peaks of NiO oxidation which were associated to the surface-confined redox processes Ni(II) → Ni(III) and Ni(III) → Ni(IV). Grazing angle X-ray photoelectron spectroscopy (XPS) was conducted ex-situ on NiO electrodes in both pristine and oxidized states. Oxidized NiO samples for XPS experiments were obtained in the potentiostatic mode through the polarization of NiO at its two characteristic potentials of oxidation. The XPS analysis allowed to ascertain the electronic structure of the nanoporous NiO framework, and verify the adsorption of perchlorate and chloride anions onto NiO surface due to the compensation of the charge stored in oxidized NiO. XPS also revealed that the spectrum within the region characteristic of Ni 2p ionization does not vary considerably with the state of charge of the nickel centres. This finding is in evident contrast to what has been observed for the same system when it undergoes electrochemical oxidation in aqueous electrolyte.

  6. Improved Electrochromic Characteristics of a Honeycomb-Structured Film Composed of NiO.

    Science.gov (United States)

    Yang, Hyeeun; Lee, Yulhee; Kim, Dong In; Seo, Hyeon Jin; Yu, Jung-Hoon; Nam, Sang-Hun; Boo, Jin-Hyo

    2018-09-01

    Color changes controlled by electronic energies have been studied for many years in order to fabricate energy-efficient smart windows. Reduction and oxidization of nickel oxide under the appropriate voltage can change the color of a window. For a superior nickel oxide (NiO) electrochromic device (ECD), it is important to control the chemical and physical characteristics of the surface. In this study, we applied polystyrene bead templates to nickel oxide films to fabricate a honeycomb-structured electrochromic (EC) layer. We synthesized uniform polystyrene beads using the chemical wet method and placed them on substrates to create honeycomb-structured NiO films. Then, the EC characteristics of the nickel oxide films with a honeycomb structure were evaluated with UV-Visible and cyclic voltammetry. FE-SEM and AFM were used to measure the morphologies of the nanostructures and the efficiencies of the redox reactions related to the specific surface area.

  7. Effect of Precursor Concentration on Structural Optical and Electrical Properties of NiO Thin Films Prepared by Spray Pyrolysis

    Directory of Open Access Journals (Sweden)

    Rafia Barir

    2017-01-01

    Full Text Available Undoped nickel oxide (NiO thin films were deposited on 500°C heated glass substrates using spray pyrolysis method at (0.015–0.1 M range of precursor. The latter was obtained by decomposition of nickel nitrate hexahydrate in double distilled water. Effect of precursor concentration on structural, optical, and electrical properties of NiO thin films was investigated. X-ray diffraction (XRD shows the formation of NiO under cubic structure with single diffraction peak along (111 plane at 2θ=37.24°. When precursor concentration reaches 0.1 M, an increment in NiO crystallite size over 37.04 nm was obtained indicating the product nano structure. SEM images reveal that beyond 0.04 M as precursor concentration the substrate becomes completely covered with NiO and thin films exhibit formation of nano agglomerations at the top of the sample surface. Ni-O bonds vibrations modes in the product of films were confirmed by FT-IR analysis. Transparency of the films ranged from 57 to 88% and band gap energy of the films decreases from 3.68 to 3.60 eV with increasing precursor concentration. Electrical properties of the elaborated NiO thin films were correlated to the precursor concentration.

  8. Role of copper/vanadium on the optoelectronic properties of reactive RF magnetron sputtered NiO thin films

    Science.gov (United States)

    Panneerselvam, Vengatesh; Chinnakutti, Karthik Kumar; Thankaraj Salammal, Shyju; Soman, Ajith Kumar; Parasuraman, Kuppusami; Vishwakarma, Vinita; Kanagasabai, Viswanathan

    2018-04-01

    In this study, pristine nickel oxide (NiO), copper-doped NiO (Cu-NiO) and vanadium-doped NiO (V-NiO) thin films were deposited using reactive RF magnetron co-sputtering as a function of dopant sputtering power. Cu (0-8 at%) and V (0-1 at%) were doped into the NiO lattice by varying the sputtering power of Cu and V in the range of 5-15 W. The effect of dopant concentration on optoelectronic behavior is investigated by UV-Vis-NIR spectrophotometer and Hall measurements. XRD analysis showed that the preferred orientation of the cubic phase for undoped NiO changes from (200) to (111) plane when the sputtering parameters are varied. The observed changes in the lattice parameters and bonding states of the doped NiO indicate the substitution of Ni ions by monovalent Cu and trivalent V ions. The optical bandgap of pristine NiO, Cu-NiO, and V-NiO was found to be 3.6, 3.45, and 3.05 eV, respectively, with decreased transmittance and resistivity. Further analysis using SEM and AFM described the morphological behavior of doped NiO thin films and Raman spectroscopy indicated the structural changes on doping. These findings would be helpful in fabricating solid-state solar cells using doped NiO as efficient hole transporting material.

  9. Preparation and characterization of Eosin B- and Erythrosin J-sensitized nanostructured NiO thin film photocathodes

    Energy Technology Data Exchange (ETDEWEB)

    Vera, F. [Instituto de Quimica, Universidad Catolica de Valparaiso, Valparaiso (Chile); Schrebler, R. [Instituto de Quimica, Universidad Catolica de Valparaiso, Valparaiso (Chile); Munoz, E. [Instituto de Quimica, Universidad Catolica de Valparaiso, Valparaiso (Chile); Suarez, C. [Instituto de Quimica, Universidad Catolica de Valparaiso, Valparaiso (Chile); Cury, P. [Instituto de Quimica, Universidad Catolica de Valparaiso, Valparaiso (Chile); Gomez, H. [Instituto de Quimica, Universidad Catolica de Valparaiso, Valparaiso (Chile); Cordova, R. [Instituto de Quimica, Universidad Catolica de Valparaiso, Valparaiso (Chile); Marotti, R.E. [Instituto de Fisica, Facultad de Ingenieria, Universidad de la Republica, Herrera y Reissig 565, C.C. 30, 11000 Montevideo (Uruguay); Dalchiele, E.A. [Instituto de Fisica, Facultad de Ingenieria, Universidad de la Republica, Herrera y Reissig 565, C.C. 30, 11000 Montevideo (Uruguay)]. E-mail: dalchiel@fing.edu.uy

    2005-11-01

    Nickel oxide (NiO) thin films were prepared onto ITO/glass substrates by spin-coating, dipping and electrochemically. Studies of the morphological and structural properties of the films were done by atomic force microscopy (AFM). Photoelectrochemical and optical experiments were carried out in order to characterize the semiconductor properties of the nanostructured NiO thin films. The experiments were also done for Eosin B- and Erythrosin J-sensitized nanostructured NiO films, with the aim to visualize their potential application as photocatodes in tandem dye-sensitized solar cells (TDSSC). The NiO grown by dipping was the one presenting the best morphological properties. The photoelectrochemical results for all the bare NiO, NiO-Eosin B and NiO-Erythrosin J/electrolyte (I{sub 2}/I{sup -}) systems showed a p-type behavior. An enhancement in the photocurrent has been observed for the systems sensitized with the dyes. For the NiO/Erythrosin J system the enhancement of the current under illumination in comparison to the dark current was about 200%.

  10. Preparation and characterization of Eosin B- and Erythrosin J-sensitized nanostructured NiO thin film photocathodes

    International Nuclear Information System (INIS)

    Vera, F.; Schrebler, R.; Munoz, E.; Suarez, C.; Cury, P.; Gomez, H.; Cordova, R.; Marotti, R.E.; Dalchiele, E.A.

    2005-01-01

    Nickel oxide (NiO) thin films were prepared onto ITO/glass substrates by spin-coating, dipping and electrochemically. Studies of the morphological and structural properties of the films were done by atomic force microscopy (AFM). Photoelectrochemical and optical experiments were carried out in order to characterize the semiconductor properties of the nanostructured NiO thin films. The experiments were also done for Eosin B- and Erythrosin J-sensitized nanostructured NiO films, with the aim to visualize their potential application as photocatodes in tandem dye-sensitized solar cells (TDSSC). The NiO grown by dipping was the one presenting the best morphological properties. The photoelectrochemical results for all the bare NiO, NiO-Eosin B and NiO-Erythrosin J/electrolyte (I 2 /I - ) systems showed a p-type behavior. An enhancement in the photocurrent has been observed for the systems sensitized with the dyes. For the NiO/Erythrosin J system the enhancement of the current under illumination in comparison to the dark current was about 200%

  11. Effect of copper concentration on the physical properties of copper doped NiO thin films deposited by spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Mani Menaka, S., E-mail: manimenaka.phy@gmail.com [PG and Research Department of Physics, Government Arts College, Coimbatore, 641018, Tamilnadu (India); Umadevi, G. [PG and Research Department of Physics, Government Arts College, Coimbatore, 641018, Tamilnadu (India); Manickam, M. [SRMV College of Arts and Science, Coimbatore, 641020, Tamilnadu (India)

    2017-04-15

    The spray pyrolysis (SP) technique is an important and powerful method for the preparation of nickel oxide (NiO) and copper-doped nickel oxide thin films. The best films were obtained when the substrate temperature, T{sub s} = 450 °C on glass substrates. Copper (Cu) concentrations in the films were varied from 0 to 8%. The effect of Cu concentration on the structural, morphological, spectral, optical, and electrical properties of the thin films were studied by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Fourier transformed infrared spectroscopy (FTIR), UV–vis–NIR spectrophotometer, Hot probe and Hall system. The X-ray diffraction result shows the polycrystalline cubic structure of sprayed films with (200) preferred orientation. The variations of the structural parameters such as lattice parameters and grain sizes were investigated. The SEM image displays the surface morphology of the NiO and Cu:NiO thin films. The FTIR of the as-deposited films were associated with chemical identification. The optical transmittance and absorbance spectra of the films were measured by UV–vis–NIR spectrophotometer. The absorption coefficient and band gaps of the films were calculated using the optical method. All the NiO and Cu:NiO films were p-type. The resistivity of the above films decreases with the increase in copper concentration and so the conductivity of the films depend on the precursor concentration. - Highlights: • Pure and Cu:NiO films were deposited by Spray pyrolysis technique. • The XRD result shows the polycrystalline nature of pure and Cu:NiO films. • The formation of pure and Cu:NiO were confirmed by FTIR analysis. • Band gap values of pure and Cu:NiO decreases. • All the pure and Cu:NiO films were p-type.

  12. Effect of copper concentration on the physical properties of copper doped NiO thin films deposited by spray pyrolysis

    International Nuclear Information System (INIS)

    Mani Menaka, S.; Umadevi, G.; Manickam, M.

    2017-01-01

    The spray pyrolysis (SP) technique is an important and powerful method for the preparation of nickel oxide (NiO) and copper-doped nickel oxide thin films. The best films were obtained when the substrate temperature, T_s = 450 °C on glass substrates. Copper (Cu) concentrations in the films were varied from 0 to 8%. The effect of Cu concentration on the structural, morphological, spectral, optical, and electrical properties of the thin films were studied by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Fourier transformed infrared spectroscopy (FTIR), UV–vis–NIR spectrophotometer, Hot probe and Hall system. The X-ray diffraction result shows the polycrystalline cubic structure of sprayed films with (200) preferred orientation. The variations of the structural parameters such as lattice parameters and grain sizes were investigated. The SEM image displays the surface morphology of the NiO and Cu:NiO thin films. The FTIR of the as-deposited films were associated with chemical identification. The optical transmittance and absorbance spectra of the films were measured by UV–vis–NIR spectrophotometer. The absorption coefficient and band gaps of the films were calculated using the optical method. All the NiO and Cu:NiO films were p-type. The resistivity of the above films decreases with the increase in copper concentration and so the conductivity of the films depend on the precursor concentration. - Highlights: • Pure and Cu:NiO films were deposited by Spray pyrolysis technique. • The XRD result shows the polycrystalline nature of pure and Cu:NiO films. • The formation of pure and Cu:NiO were confirmed by FTIR analysis. • Band gap values of pure and Cu:NiO decreases. • All the pure and Cu:NiO films were p-type.

  13. Influence of discharge voltage on the sensitivity of the resultant sputtered NiO thin films toward hydrogen gas

    Energy Technology Data Exchange (ETDEWEB)

    Khalaf, Mohammed K. [Center of Applied Physics, Directorate of Materials Research, Ministry of Science and Technology, Baghdad (Iraq); Mutlak, Rajaa H. [Dept. of Physics, College of Science, University of Baghdad, Ministry of Higher Education and Scientific Research, Baghdad (Iraq); Khudiar, Ausama I., E-mail: ausamaikhudiar@yahoo.com [Center of Applied Physics, Directorate of Materials Research, Ministry of Science and Technology, Baghdad (Iraq); Hial, Qahtan G. [Dept. of Physics, College of Science, University of Baghdad, Ministry of Higher Education and Scientific Research, Baghdad (Iraq)

    2017-06-01

    Nickel oxide thin films were deposited on glass substrates as the main gas sensor for H{sub 2} by the DC sputtering technique at various discharge voltages within the range of 1.8–2.5 kV. Their structural, optical and gas sensing properties were investigated by XRD, AFM, SEM, ultraviolet visible spectroscopy and home-made gas sensing measurement units. A diffraction peak in the direction of NiO (200) was observed for the sputtered films, thereby indicating that these films were polycrystalline in nature. The optical band gap of the films decreased from 3.8 to 3.5 eV when the thickness of the films was increased from 83.5 to 164.4 nm in relation to an increase in the sputtering discharge voltage from 1.8 to 2.5 kV, respectively. The gas sensitivity performance of the NiO films that were formed was studied and the electrical responses of the NiO-based sensors toward different H{sub 2} concentrations were also considered. The sensitivity of the gas sensor increased with the working temperature and H{sub 2} gas concentration. The thickness of the NiO thin films was also an important parameter in determining the properties of the NiO films as H{sub 2} sensors. It was shown in this study that NiO films have the capability to detect H{sub 2} concentrations below 3% in wet air, a feature that allows this material to be used directly for the monitoring of the environment.

  14. Zn doping induced conductivity transformation in NiO films for realization of p-n homo junction diode

    Science.gov (United States)

    Dewan, Sheetal; Tomar, Monika; Tandon, R. P.; Gupta, Vinay

    2017-06-01

    Mixed transition metal oxide, zinc doped NiO, Z n x N i 1 - x O (x = 0, 0.01, 0.02, 0.05, and 0.10), thin films have been fabricated by the RF magnetron sputtering technique in an oxygen deficit ambience at a growth temperature of 400 °C. The present report highlights the effect of Zn doping in NiO thin films on its structural, optical, and electrical properties. Optical transmission enhancement and band gap engineering in a-axis oriented NiO films have been demonstrated via Zn substitution. Hall effect measurements of the prepared samples revealed a transition from p-type to n-type conductivity in NiO at 2% Zn doping. A NiO based transparent p-n homojunction diode has been fabricated successfully, and the conduction mechanism dominating the diode properties is reported in detail. Current-voltage (I-V) characteristics of the homojunction diode are found to obey the Space Charge Limited Conduction mechanism with non-ideal square law behaviour.

  15. Ultra smooth NiO thin films on flexible plastic (PET) substrate at room temperature by RF magnetron sputtering and effect of oxygen partial pressure on their properties

    International Nuclear Information System (INIS)

    Nandy, S.; Goswami, S.; Chattopadhyay, K.K.

    2010-01-01

    Transparent p-type nickel oxide thin films were grown on polyethylene terephthalate (PET) and glass substrates by RF magnetron sputtering technique in argon + oxygen atmosphere with different oxygen partial pressures at room temperature. The morphology of the NiO thin films grown on PET and glass substrates was studied by atomic force microscope. The rms surface roughnesses of the films were in the range 0.63-0.65 nm. These ultra smooth nanocrystalline NiO thin films are useful for many applications. High resolution transmission electron microscopic studies revealed that the grains of NiO films on the highly flexible PET substrate were purely crystalline and spherical in shape with diameters 8-10 nm. XRD analysis also supported these results. NiO films grown on the PET substrates were found to have better crystalline quality with fewer defects than those on the glass substrates. The sheet resistances of the NiO films deposited on PET and glass substrates were not much different; having values 5.1 and 5.3 kΩ/□ and decreased to 3.05, 3.1 kΩ/□ respectively with increasing oxygen partial pressure. The thicknesses of the films on both substrates were ∼700 nm. It was also noted that further increase in oxygen partial pressure caused increase in resistivity due to formation of defects in NiO.

  16. Metal oxides modified NiO catalysts for oxidative dehydrogenation of ethane to ethylene

    KAUST Repository

    Zhu, Haibo

    2014-06-01

    The sol-gel method was applied to the synthesis of Zr, Ti, Mo, W, and V modified NiO based catalysts for the ethane oxidative dehydrogenation reaction. The synthesized catalysts were characterized by XRD, N2 adsorption, SEM and TPR techniques. The results showed that the doping metals could be highly dispersed into NiO domains without the formation of large amount of other bulk metal oxide. The modified NiO materials have small particle size, larger surface area, and higher reduction temperature in contrast to pure NiO. The introduction of group IV, V and VI transition metals into NiO decreases the catalytic activity in ethane ODH. However, the ethylene selectivity is enhanced with the highest level for the Ni-W-O and Ni-Ti-O catalysts. As a result, these two catalysts show improved efficiency of ethylene production in the ethane ODH reaction. © 2014 Elsevier B.V. All rights reserved.

  17. Growth and Characteristic of Amorphous Nano-Granular TeO2-V2O5-NiO Thin Films

    Science.gov (United States)

    Hosseinzadeh, Sh.; Rahmati, A.; Bidadi, H.

    2016-12-01

    TeO2-V2O5-NiO thin films were deposited using thermal evaporation from 40TeO2-(60-y)V2O5-yNiO (y=0-30mol%) target. Structural analysis of the films was identified by X-ray diffractometry (XRD) and scanning electron microscopy (SEM). The amorphous TeO2-V2O5-NiO films have nanosized clear grain structure and sharp grain boundaries. DC conductivity and current-voltage (I-V) characteristic of TeO2-V2O5-NiO thin films were measured in the temperature range of 300-423K. As nickel oxide (NiO) content increases, the DC conductivity decreases up to two orders in value (10-9-10-11Sṡcm-1). Temperature dependence of conductivity is described using the small polaron hopping (SPH) model as well. Poole-Frenkel effect is observed at high external electric field. The optical absorption spectra of the TeO2-V2O5-NiO thin films were recorded in the wavelength range of 380-1100nm. The absorption coefficient revealed bandgap shrinkage (3.01-2.3eV) and band tail widening, due to an increase in NiO content. Energy dispersive X-ray spectroscopy (EDX) was used to determine elemental composition. In TeO2-V2O5-NiO thin films, the NiO content is around fifth of the initial target.

  18. Fabrication and characterization of NiO thin films prepared by SILAR method

    International Nuclear Information System (INIS)

    Akaltun, Yunus; Çayır, Tuba

    2015-01-01

    Highlights: • NiO thin films have been deposited on glass substrates using SILAR method for the first time. • The electron effective mass, refractive index were calculated by using the energy bandgap values. • The effect of film thickness on the structural, optical and electrical properties were studied. • The bandgap values of the films decreased from 3.71 to 3.67 eV. - Abstract: NiO thin films were synthesised on glass substrates at room temperature using the Successive Ionic Layer Adsorption and Reaction (SILAR) method. The effect of film thickness on the structural, morphological, optical and electrical properties of NiO thin films was investigated. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) studies showed that all the films exhibit polycrystalline structure are covered well with glass substrates. The crystalline and surface properties of the films improved with increasing film thickness. The energy band gap values were decreased from 3.71 to 3.67 eV depending on the film thickness. The refractive index (n), optical static (ε o ) and high frequency dielectric constant (ε ∞ ) values were calculated by using the energy band gap values as a function of the film thickness. The resistivity of the films varied between 4.1 and 802.1 Ω cm with increasing film thickness at room temperature

  19. Fabrication and characterization of NiO thin films prepared by SILAR method

    Energy Technology Data Exchange (ETDEWEB)

    Akaltun, Yunus [Department of Electrical and Electronic Engineering, Erzincan University, 24100 Erzincan (Turkey); Çayır, Tuba [Department of Biomedical Engineering, Erzincan University, 24100 Erzincan (Turkey)

    2015-03-15

    Highlights: • NiO thin films have been deposited on glass substrates using SILAR method for the first time. • The electron effective mass, refractive index were calculated by using the energy bandgap values. • The effect of film thickness on the structural, optical and electrical properties were studied. • The bandgap values of the films decreased from 3.71 to 3.67 eV. - Abstract: NiO thin films were synthesised on glass substrates at room temperature using the Successive Ionic Layer Adsorption and Reaction (SILAR) method. The effect of film thickness on the structural, morphological, optical and electrical properties of NiO thin films was investigated. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) studies showed that all the films exhibit polycrystalline structure are covered well with glass substrates. The crystalline and surface properties of the films improved with increasing film thickness. The energy band gap values were decreased from 3.71 to 3.67 eV depending on the film thickness. The refractive index (n), optical static (ε{sub o}) and high frequency dielectric constant (ε{sub ∞}) values were calculated by using the energy band gap values as a function of the film thickness. The resistivity of the films varied between 4.1 and 802.1 Ω cm with increasing film thickness at room temperature.

  20. Properties of NiO thin films deposited by chemical spray pyrolysis using different precursor solutions

    Energy Technology Data Exchange (ETDEWEB)

    Cattin, L. [Universite de Nantes, Nantes Atlantique Universites, LAMP, EA 3825, Faculte des Sciences et des Techniques, 2 rue de la Houssiniere, BP 92208, Nantes F-44000 (France); Reguig, B.A.; Khelil, A. [Universite d' Oran Es-Senia, LPCM2E (Algeria); Morsli, M. [Universite de Nantes, Nantes Atlantique Universites, LAMP, EA 3825, Faculte des Sciences et des Techniques, 2 rue de la Houssiniere, BP 92208, Nantes F-44000 (France); Benchouk, K. [Universite d' Oran Es-Senia, LPCM2E (Algeria); Bernede, J.C. [Universite de Nantes, Nantes Atlantique Universites, LAMP, EA 3825, Faculte des Sciences et des Techniques, 2 rue de la Houssiniere, BP 92208, Nantes F-44000 (France)], E-mail: Jean-Christian.Bernede@univ-nantes.fr

    2008-07-15

    NiO thin films have been deposited by chemical spray pyrolysis using a perfume atomizer to grow the aerosol. The influence of the precursor, nickel chloride hexahydrate (NiCl{sub 2}.6H{sub 2}O), nickel nitrate hexahydrate (Ni(NO{sub 3}){sub 2}.6H{sub 2}O), nickel hydroxide hexahydrate (Ni(OH){sub 2}.6H{sub 2}O), nickel sulfate tetrahydrate (NiSO{sub 4}.4H{sub 2}O), on the thin films properties has been studied. In the experimental conditions used (substrate temperature 350 deg. C, precursor concentration 0.2-0.3 M, etc.), pure NiO thin films crystallized in the cubic phase can be achieved only with NiCl{sub 2} and Ni(NO{sub 3}){sub 2} precursors. These films have been post-annealed at 425 deg. C for 3 h either in room atmosphere or under vacuum. If all the films are p-type, it is shown that the NiO films conductivity and optical transmittance depend on annealing process. The properties of the NiO thin films annealed under room atmosphere are not significantly modified, which is attributed to the fact that the temperature and the environment of this annealing is not very different from the experimental conditions during spray deposition. The annealing under vacuum is more efficient. This annealing being proceeded in a vacuum no better than 10{sup -2} Pa, it is supposed that the modifications of the NiO thin film properties, mainly the conductivity and optical transmission, are related to some interaction between residual oxygen and the films.

  1. Low temperature phase transition of the stoichiometric Ln2NiO4 oxides

    International Nuclear Information System (INIS)

    Fernandez, F.; Saez-Puche, R.; Botto, I.L.; Baran, E.J.

    1991-01-01

    In this paper we will present a comparative study of the structural phase transition in Ln 2 NiO 4 oxides, by means of neutron diffraction and infrared(IR) spectroscopy. In the Ln 2 NiO 4 oxides (Ln=La, Pr and Nd), there is a low temperature structural phase transition from the orthorhombic symmetry to a tetragonal phase, of first order character. The IR spectra show, at low temperature, a splitting of the bands related with the stretching Ni-O, strongly correlated with the phase transformation. From the neutron data, the phase transition can be visualized as a sudden tilt of the nickel octahedra

  2. Stabilized chromium oxide film

    Science.gov (United States)

    Garwin, Edward L.; Nyaiesh, Ali R.

    1988-01-01

    Stabilized air-oxidized chromium films deposited on high-power klystron ceramic windows and sleeves having a thickness between 20 and 150.ANG. are useful in lowering secondary electron emission yield and in avoiding multipactoring and window failure due to overheating. The ceramic substrate for the film is chosen from alumina, sapphire or beryllium oxide.

  3. Oxidation films morphology

    International Nuclear Information System (INIS)

    Paidassi, J.

    1960-01-01

    After studying the oxidation of several pure polyvalent metals (Fe, Cu, Mn, Ni, U) and of their oxides at high temperature and atmospheric pressure, the author suggests how to modify the usual representation of the oxide film (a piling of different oxide layers, homogeneous on a micrographic scale with a equi-axial crystallisation, free of mechanical tensions, with flat boundary surfaces) to have it nearer to reality. In this first part, the author exposes the study of the real micrographic structure of the oxidation film and gives examples of precipitation in the oxides during the cooling of the oxidised sample. (author) [fr

  4. Magnetic dichroism and spin structure of antiferromagnetic NiO(001) films

    NARCIS (Netherlands)

    Altieri, S; Finazzi, M; Hsieh, HH; Lin, HJ; Chen, CT; Hibma, T; Valeri, S; Sawatzky, GA

    2003-01-01

    We find that Ni L-2 edge x-ray magnetic linear dichroism is fully reversed for NiO(001) films on materials with reversed lattice mismatch. We relate this phenomenon to a preferential stabilization of magnetic S domains with main spin component either in or out of the plane, via dipolar interactions.

  5. Geometric structures of thin film: Pt on Pd(110) and NiO on Ni(100)

    Energy Technology Data Exchange (ETDEWEB)

    Warren, Oden L. [Iowa State Univ., Ames, IA (United States)

    1993-07-01

    This thesis is divided into 3 papers: dynamical low-energy electron- diffraction investigation of lateral displacements in topmost layer of Pd(110); determination of (1x1) and (1x2) structures of Pt thin films on Pd(110) by dynamical low-energy electron-diffraction analysis; and structural determination of a NiO(111) film on Ni(100) by dynamical low-energy electron-diffraction analysis.

  6. Hydrogen Gas Sensing Characteristics of Nanostructured NiO Thin Films Synthesized by SILAR Method

    Science.gov (United States)

    Karaduman, Irmak; Çorlu, Tugba; Yıldırım, M. Ali; Ateş, Aytunç; Acar, Selim

    2017-07-01

    Nanostructured NiO thin films have been synthesized by a facile, low-cost successive ionic layer adsorption and reaction (SILAR) method, and the effects of the film thickness on their hydrogen gas sensing properties investigated. The samples were characterized by scanning electron microscopy (SEM), x-ray diffraction (XRD) analysis, and energy-dispersive x-ray analysis. The XRD results revealed that the crystallinity improved with increasing thickness, exhibiting polycrystalline structure. SEM studies showed that all the films covered the glass substrate well. According to optical absorption measurements, the optical bandgap decreased with increasing film thickness. The gas sensing properties of the nanostructured NiO thin films were studied as a function of operating temperature and gas concentration. The samples showed good sensing performance of H2 gas with high response. The maximum response was 75% at operating temperature of 200°C for hydrogen gas concentration of 40 ppm. These results demonstrate that nanostructured NiO thin films synthesized by the SILAR method have potential for application in hydrogen detection.

  7. P-channel transparent thin-film transistor using physical-vapor-deposited NiO layer

    Science.gov (United States)

    Lin, Chiung-Wei; Chung, Wei-Chieh; Zhang, Zhao-De; Hsu, Ming-Chih

    2018-01-01

    The effect of oxygen (O) content on the electrical properties of physical-vapor-deposited nickel oxide (PVD-NiO) was studied. When the NiO target was sputtered, introducing O2 can lead to the formation of Ni3+ ions in the deposited film. These Ni3+ ions can act as acceptors. However, there were too many Ni3+ ions that were obtained following the introduction of O atoms. It resulted in intensive p-type conduction and made the O2-introduced PVD-NiO behave as a conductor. Thus, it was possible to reduce the O content of PVD-NiO to obtain a p-type semiconductor. In this study, a transparent PVD-NiO film with a carrier concentration of 1.62 × 1017 cm-3 and a resistivity of 3.74 Ω cm was sputter-deposited within pure argon plasma. The thin-film transistor (TFT) employing this proposed PVD-NiO can result in good current switching, and even operated at very low drain-source voltage. The ON/OFF current ratio, field-effect carrier mobility, and threshold voltage of the proposed NiO TFT were 3.61 × 104, 1.09 cm2 V-1 s-1 and -3.31 V, respectively.

  8. Thermal oxidation of InP surfaces modified with NiO + PbO mixtures

    International Nuclear Information System (INIS)

    Mittova, I.Ya.; Tomina, E.V.; Samsonov, A.A.; Lukin, A.N.; Simonov, S.P.

    2005-01-01

    The oxidation kinetics of (NiO + PbO)/InP, NiO/InP and PbO/InP structures in an oxygen flow is studied in the temperature range of 400-550 deg C. It is shown by IR spectroscopy that the thermal oxidation of (NiO + PbO)/InP structures leads to the formation of nickel and lead polyphosphates and indium ortho- and metaphosphates. The nickel phosphates may then gradually transform into diphosphates, depending on the oxidation temperature, whereas the lead phosphates undergo no changes [ru

  9. Fast electrochemical deposition of Ni(OH)2 precursor involving water electrolysis for fabrication of NiO thin films

    Science.gov (United States)

    Koyama, Miki; Ichimura, Masaya

    2018-05-01

    Ni(OH)2 precursor films were deposited by galvanostatic electrochemical deposition (ECD), and NiO thin films were fabricated by annealing in air. The effects of the deposition current densities were studied in a range that included current densities high enough to electrolyze water and generate hydrogen bubbles. The films fabricated by ECD involving water electrolysis had higher transparency and smoother surface morphology than those deposited with lower current densities. In addition, the annealed NiO films clearly had preferred (111) orientation when the deposition was accompanied by water electrolysis. p-type conduction was confirmed for the annealed films.

  10. Formation and microstructure of nickel oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Marcius, Marijan [Ruder Boskovic Institute, P.O. Box 180, HR-10002 Zagreb (Croatia); Ristic, Mira, E-mail: ristic@irb.hr [Ruder Boskovic Institute, P.O. Box 180, HR-10002 Zagreb (Croatia); Ivanda, Mile; Music, Svetozar [Ruder Boskovic Institute, P.O. Box 180, HR-10002 Zagreb (Croatia)

    2012-11-15

    Highlights: Black-Right-Pointing-Pointer Difference in NiO films formed on Ni plate or glass substrate were found. Black-Right-Pointing-Pointer NiO particle sizes on Ni plate changed from nano to micron dimensions. Black-Right-Pointing-Pointer NiO particle sizes on glass substrate changed from {approx}16 to {approx}27 nm. Black-Right-Pointing-Pointer Raman and UV/Vis/NIR spectra are related to the microstructure of NiO films. - Abstract: The formation and microstructure of NiO films on different substrates were monitored using XRD, Raman, UV/Vis/NIR and FE-SEM/EDS techniques. The formation of NiO films on Ni plates in air atmosphere between 400 and 800 Degree-Sign C was confirmed by XRD and Raman spectroscopy. The origin of Raman bands and corresponding Raman shifts in the samples are discussed. An increase in the size of NiO particles in the films from nano to micro dimensions was demonstrated. A change in the atomic ratio Ni:O with an increase in heating temperature was observed. Polished Ni plates coated with a thin Ni-acetate layer upon heating at high temperatures gave similar NiO microstructures on the surface like in the case of non-treated Ni plates. Glass substrates coated with thin Ni-acetate films upon heating between 400 and 800 Degree-Sign C yielded pseudospherical NiO nanoparticles. The dominant Raman band as an indicator of NiO formation on a glass substrate was shown. The formation of NiO nanoparticles on glass substrates with maximum size distribution from 16 to 27 nm in a broad temperature range from 400 to 800 Degree-Sign C can be explained by the absence of a constant source of metallic nickel which was present in the case of Ni plates.

  11. Fabrication of nickel oxide and Ni-doped indium tin oxide thin films using pyrosol process

    International Nuclear Information System (INIS)

    Nakasa, Akihiko; Adachi, Mami; Usami, Hisanao; Suzuki, Eiji; Taniguchi, Yoshio

    2006-01-01

    Organic light emitting diodes (OLEDs) need indium tin oxide (ITO) anodes with highly smooth surface. The work function of ITO, about 4.8 eV, is generally rather lower than the optimum level for application to OLEDs. In this work, NiO was deposited by pyrosol process on pyrosol ITO film to increase the work function of the ITO for improving the performance of OLEDs. It was confirmed that NiO was successfully deposited on pyrosol ITO film and the NiO deposition increased the work function of pyrosol ITO, using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM) and atmospheric photoelectron spectroscopy. Furthermore, doping ITO with Ni succeeded in producing the Ni-doped ITO film with high work function and lower sheet resistance

  12. Strain Influence on the Oxygen Electrocatalysis of the (100)-Oriented Epitaxial La 2 NiO 4+δ Thin Films at Elevated Temperatures

    KAUST Repository

    Lee, Dongkyu; Grimaud, Alexis; Crumlin, Ethan J.; Mezghani, Khaled; Habib, Mohamed A.; Feng, Zhenxing; Hong, Wesley T.; Biegalski, Michael D.; Christen, Hans M.; Shao-Horn, Yang

    2013-01-01

    Ruddlesden-Popper materials such as La2NiO4+δ (LNO) have high activities for surface oxygen exchange kinetics promising for solid oxide fuel cells and oxygen permeation membranes. Here we report the synthesis of the (100)tetragonal-oriented epitaxial LNO thin films prepared by pulsed laser deposition. The surface oxygen exchange kinetics determined from electrochemical impedance spectroscopy (EIS) were found to increase with decreasing film thickness from 390 to 14 nm. No significant change of the surface chemistry with different film thicknesses was observed using ex situ auger electron spectroscopy (AES). Increasing volumetric strains in the LNO films at elevated temperatures determined from in situ high-resolution X-ray diffraction (HRXRD) were correlated with increasing surface exchange kinetics and decreasing film thickness. Volumetric strains may alter the formation energy of interstitial oxygen and influence on the surface oxygen exchange kinetics of the LNO films. © 2013 American Chemical Society.

  13. Strain Influence on the Oxygen Electrocatalysis of the (100)-Oriented Epitaxial La 2 NiO 4+δ Thin Films at Elevated Temperatures

    KAUST Repository

    Lee, Dongkyu

    2013-09-19

    Ruddlesden-Popper materials such as La2NiO4+δ (LNO) have high activities for surface oxygen exchange kinetics promising for solid oxide fuel cells and oxygen permeation membranes. Here we report the synthesis of the (100)tetragonal-oriented epitaxial LNO thin films prepared by pulsed laser deposition. The surface oxygen exchange kinetics determined from electrochemical impedance spectroscopy (EIS) were found to increase with decreasing film thickness from 390 to 14 nm. No significant change of the surface chemistry with different film thicknesses was observed using ex situ auger electron spectroscopy (AES). Increasing volumetric strains in the LNO films at elevated temperatures determined from in situ high-resolution X-ray diffraction (HRXRD) were correlated with increasing surface exchange kinetics and decreasing film thickness. Volumetric strains may alter the formation energy of interstitial oxygen and influence on the surface oxygen exchange kinetics of the LNO films. © 2013 American Chemical Society.

  14. Sputtered indium oxide films

    International Nuclear Information System (INIS)

    Gillery, F.H.

    1986-01-01

    A method is described for depositing on a substrate multiple layer films comprising at least one primary layer of a metal oxide and at least one primary layer of a metal other than the metal of the oxide layer. The improvement described here comprises improving the adhesion between the metal oxide and metal layers by depositing between the layers an intermediate metal-containing layer having an affinity for both the metal and metal oxide layers. An article of manufacture is described comprising a nonmetallic substrate, and deposited thereon in any order: a. at least one coating layer of metal; b. at least one coating layer of an oxide of a metal other than the metal of the metal layer; and c. deposited between the metal and metal oxide layers an intermediate metal-containing layer having an affinity for both the metal and metal oxide layers

  15. Effect of different nickel precursors on capacitive behavior of electrodeposited NiO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kore, R. M.; Ghadge, T. S.; Ambare, R. C.; Lokhande, B. J., E-mail: bjlokhande@yahoo.com [School of Physical Sciences, Solapur University, Solapur-413 255, M.S. (India)

    2016-04-13

    In the present study, the effect of nickel precursors containing different anions like nitrate, chloride and sulphate on the morphology and pseudocapacitance behavior of NiO is investigated. The NiO samples were prepared by using a potentiondynamic electrodeposition technique in the three electrode cell. Cyclic voltammetry technique was exploited for potentiodynamic deposition of the films. The obtained samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), etc. The XRD reveals the cubic crystal structure for all samples. The SEM micrograph shows nanoflakelike, up grown nanoflakes and honeycomb like nanostructured morphologies for nitrate, chloride and sulphate precursors respectively. The capacitive behavior of these samples was recorded using cyclic voltammetry (CV), charge-discharge and electrochemical impedance spectroscopy (EIS) in 1 M KOH electrolyte. The specific capacitance values of NiO samples obtained using CV for nitrate, chloride and sulphate precursors were 136, 214 and 893 Fg{sup −1} respectively, at the scan rate of 5 mVs{sup −1}. The charge discharge study shows high specific energy for the sample obtained from sulphate (23.98 Whkg{sup −1}) as compared to chloride (9.67 Whkg{sup −1}) and nitrate (4.9 Whkg{sup −1}), whereas samples of cholride (13.9 kWkg{sup −1} and nitrate (10.5 kWkg{sup −1}) shows comparatively more specific power than samples obtained from sulphate (7.6 kWkg{sup −1}). The equivalent series resistance of NiO samples observed from EIS study are 1.34, 1.29 and 1.27 Ω respectively for nitrate, chloride and sulphate precursors. These results emphasizes that the samples obtained from sulphate precursors provides very low impedance through honeycomb like nanostructured morphology which supports good capacitive behavior of NiO.

  16. Thin film metal-oxides

    CERN Document Server

    Ramanathan, Shriram

    2009-01-01

    Presents an account of the fundamental structure-property relations in oxide thin films. This title discusses the functional properties of thin film oxides in the context of applications in the electronics and renewable energy technologies.

  17. Fabrication of Flexible Arrayed Lactate Biosensor Based on Immobilizing LDH-NAD+ on NiO Film Modified by GO and MBs

    Science.gov (United States)

    Yan, Siao-Jie; Liao, Yi-Hung; Lai, Chih-Hsien; Wu, You-Xiang; Wu, Cian-Yi; Chen, Hsiang-Yi; Huang, Hong-Yu; Wu, Tong-Yu

    2017-01-01

    We proposed the flexible arrayed lactate biosensor based on immobilizing l-lactate dehydrogenase (LDH) and nicotinamide adenine dinucleotide (NAD+) on nickel oxide (NiO) film, and which the average sensitivity could be enhanced by using graphene oxide (GO) and magnetic beads (MBs). By using GO and MBs, it exhibits excellent sensitivity (45.397 mV/mM) with a linearity of 0.992 in a range of 0.2 mM to 3 mM. According to the results of electrochemical impedance spectroscopy (EIS), the electron transfer resistance of LDH-NAD+-MBs/GPTS/GO/NiO film was smaller than those of LDH-NAD+/GPTS/GO/NiO film and LDH-NAD+/GPTS/NiO film, and it presented the outstanding electron transfer ability. After that, the limit of detection, anti-interference effect and bending test were also investigated. PMID:28704960

  18. Fabrication of Flexible Arrayed Lactate Biosensor Based on Immobilizing LDH-NAD+ on NiO Film Modified by GO and MBs

    Directory of Open Access Journals (Sweden)

    Jung-Chuan Chou

    2017-07-01

    Full Text Available We proposed the flexible arrayed lactate biosensor based on immobilizing l-lactate dehydrogenase (LDH and nicotinamide adenine dinucleotide ( NAD + on nickel oxide (NiO film, and which the average sensitivity could be enhanced by using graphene oxide (GO and magnetic beads (MBs. By using GO and MBs, it exhibits excellent sensitivity (45.397 mV/mM with a linearity of 0.992 in a range of 0.2 mM to 3 mM. According to the results of electrochemical impedance spectroscopy (EIS, the electron transfer resistance of LDH- NAD + -MBs/GPTS/GO/NiO film was smaller than those of LDH-NAD+/GPTS/GO/NiO film and LDH- NAD + /GPTS/NiO film, and it presented the outstanding electron transfer ability. After that, the limit of detection, anti-interference effect and bending test were also investigated.

  19. Synthesis and characterization of cobalt doped nickel oxide thin films by spray pyrolysis method

    Science.gov (United States)

    Sathisha, D.; Naik, K. Gopalakrishna

    2018-05-01

    Cobalt (Co) doped nickel oxide (NiO) thin films were deposited on glass substrates at a temperature of about 400 °C by spray pyrolysis method. The effect of Co doping concentration on structural, optical and compositional properties of NiO thin films was investigated. X-ray diffraction result shows that the deposited thin films are polycrystalline in nature. Surface morphologies of the deposited thin films were observed by FESEM and AFM. EDS spectra showed the incorporation of Co dopants in NiO thin films. Optical properties of the grown thin films were characterized by UV-visible spectroscopy. It was found that the optical band gap energy and transmittance of the films decrease with increasing Co doping concentration.

  20. Surfactant-assisted ultrasonic spray pyrolysis of nickel oxide and lithium-doped nickel oxide thin films, toward electrochromic applications

    Energy Technology Data Exchange (ETDEWEB)

    Denayer, Jessica [Group of Research in Energy and Environment for MATerials (GREENMAT), University of Liège, allée de la chimie 3, 4000 Liège (Belgium); Bister, Geoffroy [Environmental and Material Research Association (CRIBC-INISMa), avenue gouverneur cornez 4, 7000 Mons (Belgium); Simonis, Priscilla [Laboratory LPS, University of Namur, rue de bruxelles 61, 5000 Namur (Belgium); Colson, Pierre; Maho, Anthony [Group of Research in Energy and Environment for MATerials (GREENMAT), University of Liège, allée de la chimie 3, 4000 Liège (Belgium); Aubry, Philippe [Environmental and Material Research Association (CRIBC-INISMa), avenue gouverneur cornez 4, 7000 Mons (Belgium); Vertruyen, Bénédicte [Group of Research in Energy and Environment for MATerials (GREENMAT), University of Liège, allée de la chimie 3, 4000 Liège (Belgium); Henrist, Catherine, E-mail: catherine.henrist@ulg.ac.be [Group of Research in Energy and Environment for MATerials (GREENMAT), University of Liège, allée de la chimie 3, 4000 Liège (Belgium); Lardot, Véronique; Cambier, Francis [Environmental and Material Research Association (CRIBC-INISMa), avenue gouverneur cornez 4, 7000 Mons (Belgium); Cloots, Rudi [Group of Research in Energy and Environment for MATerials (GREENMAT), University of Liège, allée de la chimie 3, 4000 Liège (Belgium)

    2014-12-01

    Highlights: • Surfactant-assisted USP: a novel and low cost process to obtain high quality nickel oxide films, with or without lithium dopant. • Increased uniformity and reduced light scattering thanks to the addition of a surfactant. • Improved electrochromic performance (coloration efficiency and contrast) for lithium-doped films by comparison with the undoped NiO film. - Abstract: Lithium-doped nickel oxide and undoped nickel oxide thin films have been deposited on FTO/glass substrates by a surfactant-assisted ultrasonic spray pyrolysis. The addition of polyethylene glycol in the sprayed solution has led to improved uniformity and reduced light scattering compared to films made without surfactant. Furthermore, the presence of lithium ions in NiO films has resulted in improved electrochromic performances (coloration contrast and efficiency), but with a slight decrease of the electrochromic switching kinetics.

  1. Rare Earth Oxide Thin Films

    CERN Document Server

    Fanciulli, Marco

    2007-01-01

    Thin rare earth (RE) oxide films are emerging materials for microelectronic, nanoelectronic, and spintronic applications. The state-of-the-art of thin film deposition techniques as well as the structural, physical, chemical, and electrical properties of thin RE oxide films and of their interface with semiconducting substrates are discussed. The aim is to identify proper methodologies for the development of RE oxides thin films and to evaluate their effectiveness as innovative materials in different applications.

  2. Electrochemical investigation of electrochromic devices based on NiO and WO3 films using different lithium salts electrolytes

    International Nuclear Information System (INIS)

    Wei, Youxiu; Chen, Mu; Liu, Weiming; Li, Lei; Yan, Yue

    2017-01-01

    Highlights: •ECDs based on NiO and WO 3 films using different electrolytes were fabricated. •Effect of different electrolytes on films and ECDs was investigated. •Applied voltage distribution on NiO and WO 3 electrodes in an ECD was studied. •Voltage distribution on films was unbalanced and associated with electrolyte. •Films have different impedance behavior in different states and electrolytes. -- Abstract: Electrochromic devices (ECDs) with different liquid electrolytes were fabricated using NiO film as counter electrode, WO 3 film as working electrode. The effect of liquid electrolytes containing different lithium salts (LiClO 4 , LiPF 6 , LiTFSI) on films and ECDs was investigated, such as transmittance change, charge density, memory effect and cyclic stability. Films or ECDs using LiPF 6 electrolyte have excellent electrochromic properties but low cyclic stability, compared with LiClO 4 and LiTFSI electrolytes. In order to deeply understand the effect of electrolyte on films and devices, the voltage distribution of films based on an analog cell and electrochemical impedance spectroscopy (EIS) were measured and analyzed in different lithium salts electrolytes. Results show that voltage distribution and EIS characteristics of films have obvious difference in liquid LiClO 4 , LiPF 6 and LiTFSI electrolytes. Voltage distribution on NiO and WO 3 films is unbalanced and the impedance of films in bleached and colored states is different in the same electrolyte.

  3. Studies on resistive switching times in NiO thin films grown by pulsed laser deposition

    International Nuclear Information System (INIS)

    Misra, P; Sahu, V K; Ajimsha, R S; Das, A K; Singh, B

    2017-01-01

    The resistive switching dynamics of NiO thin films in Au/NiO/Pt device configuration have been investigated to measure the switching times of set and reset events and their dependence on compliance current and switching voltages. The set switching time was found to be ∼10 ns at the set voltage of ∼1.8 V, while reset switching time was much longer ∼150 µ s at reset voltage of 0.8 V. With increasing compliance current from 5 to 75 mA during set process, although the resistance contrast of two states improved due to the decrease in the resistance of the low resistance state, the reset switching time increased substantially up to ∼3 ms while set time remained nearly unchanged. The fast reset switching time of ∼27 ns, comparable to that of set switching time, was achieved by applying a higher reset voltage of ∼1.2 V. The observed dependence of reset time on compliance current and reset voltage in NiO thin films was explained in light of the conducting filamentary model in which reset process is of thermal nature and involves dissolution of conducting filaments as a consequence of Joule heating generated by the reset current. (paper)

  4. Abnormal resistance switching behaviours of NiO thin films: possible occurrence of both formation and rupturing of conducting channels

    Energy Technology Data Exchange (ETDEWEB)

    Liu Chunli; Chae, S C; Chang, S H; Lee, S B; Noh, T W [ReCOE and FPRD, Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of); Lee, J S; Kahng, B [Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of); Kim, D-W [Division of Nano Sciences and Department of Physics, Ewha Womens University, Seoul 120-750 (Korea, Republic of); Jung, C U [Department of Physics, Hankuk University of Foreign Studies, Yongin, Gyeonggi-do 449-791 (Korea, Republic of); Seo, S; Ahn, S-E [Samsung Advanced Institute of Technology, Suwon 440-600 (Korea, Republic of)], E-mail: twnoh@snu.ac.kr

    2009-01-07

    We report a detailed study on the abnormal resistance switching behaviours observed in NiO thin films which show unipolar resistance switching phenomena. During the RESET process, in which the NiO film changed from a low resistance state to a high resistance state, we sometimes observed that the resistance became smaller than the initial value. We simulated the resistance switching by using a random circuit breaker network model. We found that local conducting channels could be formed as well as ruptured during the RESET process, which result in the occurrence of such abnormal switching behaviours.

  5. Metal oxides modified NiO catalysts for oxidative dehydrogenation of ethane to ethylene

    KAUST Repository

    Zhu, Haibo; Dong, Hailin; Laveille, Paco; Saih, Youssef; Caps, Valerie; Basset, Jean-Marie

    2014-01-01

    in contrast to pure NiO. The introduction of group IV, V and VI transition metals into NiO decreases the catalytic activity in ethane ODH. However, the ethylene selectivity is enhanced with the highest level for the Ni-W-O and Ni-Ti-O catalysts. As a result

  6. Comparison of the Pulmonary Oxidative Stress Caused by Intratracheal Instillation and Inhalation of NiO Nanoparticles when Equivalent Amounts of NiO Are Retained in the Lung

    Directory of Open Access Journals (Sweden)

    Masanori Horie

    2016-01-01

    Full Text Available NiO nanoparticles were administered to rat lungs via intratracheal instillation or inhalation. During pulmonary toxicity caused by NiO nanoparticles, the induction of oxidative stress is a major factor. Both intratracheal instillation and inhalation of NiO nanoparticles induced pulmonary oxidative stress. The oxidative stress response protein, heme oxygenase-1 (HO-1, was induced by the administration of NiO nanoparticles at both the protein and gene expression level. Additionally, certain oxidative-stress markers in the lung, such as 8-iso-prostaglandin F2α, thioredoxin, and inducible nitric oxide synthase were increased. Furthermore, the concentration of myeloperoxidase (MPO in the lung was also increased by the administration of NiO nanoparticles. When the amount of NiO in the lung is similar, the responses against pulmonary oxidative stress of intratracheal instillation and inhalation are also similar. However, the state of pulmonary oxidative stress in the early phase was different between intratracheal instillation and inhalation, even if the amount of NiO in the lung was similar. Inhalation causes milder oxidative stress than that caused by intratracheal instillation. On evaluation of the nanoparticle-induced pulmonary oxidative stress in the early phase, we should understand the different states of oxidative stress induced by intratracheal instillation and inhalation.

  7. Electrochemistry of hydrous oxide films

    International Nuclear Information System (INIS)

    Burke, L.D.; Lyons, M.E.G.

    1986-01-01

    The formation, acid-base properties, structural aspects, and transport processes of hydrous oxide films are discussed. Classical and nonclassical theoretical models of the oxide-solution interface are compared. Monolayer oxidation, behavior, and crystal growth of oxides on platinum, palladium, gold, iridium, rhodium, ruthenium, and some non-noble metals, including tungsten, are reviewed and compared

  8. In situ Oxidation of Ultrathin Silver Films on Ni(111)

    International Nuclear Information System (INIS)

    Meyer, A.; Flege, I.; Senanayake, S.; Kaemena, B.; Rettew, R.; Alamgir, F.; Falta, J.

    2011-01-01

    Oxidation of silver films of one- and two-monolayer thicknesses on the Ni(111) surface was investigated by low-energy electron microscopy at temperatures of 500 and 600 K. Additionally, intensity-voltage curves were measured in situ during oxidation to reveal the local film structure on a nanometer scale. At both temperatures, we find that exposure to molecular oxygen leads to the destabilization of the Ag film with subsequent relocation of the silver atoms to small few-layer-thick silver patches and concurrent evolution of NiO(111) regions. Subsequent exposure of the oxidized surface to ethylene initiates the transformation of bilayer islands back into monolayer islands, demonstrating at least partial reversibility of the silver relocation process at 600 K.

  9. Oxide ultrathin films science and technology

    CERN Document Server

    Pacchioni, Gianfranco

    2012-01-01

    A wealth of information in one accessible book. Written by international experts from multidisciplinary fields, this in-depth exploration of oxide ultrathin films covers all aspects of these systems, starting with preparation and characterization, and going on to geometrical and electronic structure, as well as applications in current and future systems and devices. From the Contents: Synthesis and Preparation of Oxide Ultrathin Films Characterization Tools of Oxide Ultrathin Films Ordered Oxide Nanostructures on Metal Surfaces Unusual Properties of Oxides and Other Insulators in the Ultrathin Limit Silica and High-K Dielectrics Thin Films in Microelectronics Oxide Passive Films and Corrosion Protection Oxide Films as Catalytic Materials and as Models of Real Catalysts Oxide Films in Spintronics Oxide Ultrathin Films in Solid Oxide Fuel Cells Transparent Conducting and Chromogenic Oxide Films as Solar Energy Materials Oxide Ultrathin Films in Sensor Applications Ferroelectricity in Ultrathin Film Capacitors T...

  10. Electrospun N-Doped Porous Carbon Nanofibers Incorporated with NiO Nanoparticles as Free-Standing Film Electrodes for High-Performance Supercapacitors and CO2 Capture.

    Science.gov (United States)

    Li, Qi; Guo, Jiangna; Xu, Dan; Guo, Jianqiang; Ou, Xu; Hu, Yin; Qi, Haojun; Yan, Feng

    2018-04-01

    Carbon nanofibers (CNF) with a 1D porous structure offer promising support to encapsulate transition-metal oxides in energy storage/conversion relying on their high specific surface area and pore volume. Here, the preparation of NiO nanoparticle-dispersed electrospun N-doped porous CNF (NiO/PCNF) and as free-standing film electrode for high-performance electrochemical supercapacitors is reported. Polyacrylonitrile and nickel acetylacetone are selected as precursors of CNF and Ni sources, respectively. Dicyandiamide not only improves the specific surface area and pore volume, but also increases the N-doping level of PCNF. Benefiting from the synergistic effect between NiO nanoparticles (NPs) and PCNF, the prepared free-standing NiO/PCNF electrodes show a high specific capacitance of 850 F g -1 at a current density of 1 A g -1 in 6 m KOH aqueous solution, good rate capability, as well as excellent long-term cycling stability. Moreover, NiO NPs dispersed in PCNF and large specific surface area provide many electroactive sites, leading to high CO 2 uptake, and high-efficiency CO 2 electroreduction. The synthesis strategy in this study provides a new insight into the design and fabrication of promising multifunctional materials for high-performance supercapacitors and CO 2 electroreduction. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Chemically grown, porous, nickel oxide thin-film for electrochemical supercapacitors

    Energy Technology Data Exchange (ETDEWEB)

    Inamdar, A.I.; Kim, YoungSam; Im, Hyunsik [Department of Semiconductor Science, Dongguk University, Seoul 100-715 (Korea, Republic of); Pawar, S.M.; Kim, J.H. [Department of Materials Science and Engineering, Chonnam National University, Gwangju 500-757 (Korea, Republic of); Kim, Hyungsang [Department of Physics, Dongguk University, Seoul 100-715 (Korea, Republic of)

    2011-02-15

    A porous nickel oxide film is successfully synthesized by means of a chemical bath deposition technique from an aqueous nickel nitrate solution. The formation of a rock salt NiO structure is confirmed with XRD measurements. The electrochemical supercapacitor properties of the nickel oxide film are examined using cyclic voltammetery (CV), galvanostatic and impedance measurements in two different electrolytes, namely, NaOH and KOH. A specific capacitance of {proportional_to}129.5 F g{sup -1} in the NaOH electrolyte and {proportional_to}69.8 F g{sup -1} in the KOH electrolyte is obtained from a cyclic voltammetery study. The electrochemical stability of the NiO electrode is observed for 1500 charge-discharge cycles. The capacitative behaviour of the NiO electrode is confirmed from electrochemical impedance measurements. (author)

  12. Mesoporous Nickel Oxide (NiO) Nanopetals for Ultrasensitive Glucose Sensing

    Science.gov (United States)

    Mishra, Suryakant; Yogi, Priyanka; Sagdeo, P. R.; Kumar, Rajesh

    2018-01-01

    Glucose sensing properties of mesoporous well-aligned, dense nickel oxide (NiO) nanostructures (NSs) in nanopetals (NPs) shape grown hydrothermally on the FTO-coated glass substrate has been demonstrated. The structural study based investigations of NiO-NPs has been carried out by X-ray diffraction (XRD), electron and atomic force microscopies, energy dispersive X-ray (EDX), and X-ray photospectroscopy (XPS). Brunauer-Emmett-Teller (BET) measurements, employed for surface analysis, suggest NiO's suitability for surface activity based glucose sensing applications. The glucose sensor, which immobilized glucose on NiO-NPs@FTO electrode, shows detection of wide range of glucose concentrations with good linearity and high sensitivity of 3.9 μA/μM/cm2 at 0.5 V operating potential. Detection limit of as low as 1 μΜ and a fast response time of less than 1 s was observed. The glucose sensor electrode possesses good anti-interference ability, stability, repeatability & reproducibility and shows inert behavior toward ascorbic acid (AA), uric acid (UA) and dopamine acid (DA) making it a perfect non-enzymatic glucose sensor.

  13. Desempenho de um filme livre de cromo na proteção contra a corrosão de ligas de alumínio 2024.

    OpenAIRE

    Mayra Rúbia Silva Castro

    2001-01-01

    Este trabalho propõe o uso de um filme preparado a partir de solução aquosa alcalina contendo íons de lítio, borato e alumínio, no sentido de inibir a corrosão de ligas de alumínio de uso aeronáutico, buscando sempre comparações com filmes de sais de cromo, atualmente utilizados. Os filmes foram obtidos por dip coating (5 minutos) e por polarização anódica (5 e 45 minutos) de ligas de alumínio 2024-T3 na solução aquosa alcalina contendo íons de lítio, borato e alumínio. Foram feitas micrograf...

  14. Structure and optical properties of nanocrystalline NiO thin film synthesized by sol-gel spin-coating method

    Energy Technology Data Exchange (ETDEWEB)

    Al-Ghamdi, A.A. [King Abdulaziz University, Faculty of Science, Physics Department, Jeddah (Saudi Arabia); Mahmoud, Waleed E., E-mail: w_e_mahmoud@yahoo.co [King Abdulaziz University, Faculty of Science, Physics Department, Jeddah (Saudi Arabia); Suez Canal University, Faculty of Science, Physics Department, Ismailia (Egypt); Yaghmour, S.J.; Al-Marzouki, F.M. [King Abdulaziz University, Faculty of Science, Physics Department, Jeddah (Saudi Arabia)

    2009-11-03

    NiO thin film was prepared by sol-gel spin-coating method. This thin film annealed at T = 600 deg. C. The structure of NiO thin film was investigated by means of X-ray diffraction (XRD) technique and scanning electron microscopy (SEM). The optical properties of the deposited film were characterized from the analysis of the experimentally recorded transmittance and reflectance data in the spectral wavelength range of 300-800 nm. The values of some important parameters of the studied films are determined, such as refractive index (n), extinction coefficient (k), optical absorption coefficient (alpha) and band energy gap (E{sub g}). According to the analysis of dispersion curves, it has been found that the dispersion data obeyed the single oscillator of the Wemple-DiDomenico model, from which the dispersion parameters and high-frequency dielectric constant were determined. In such work, from the transmission spectra, the dielectric constant (epsilon{sub i}nfinity), the third-order optical nonlinear susceptibility chi{sup (3)}, volume energy loss function (VELF) and surface energy loss function (SELF) were determined.

  15. Improvement of in-plane alignment for surface oxidized NiO layer on textured Ni substrate by two-step heat-treatment

    International Nuclear Information System (INIS)

    Hasegawa, Katsuya; Izumi, Toru; Izumi, Teruo; Shiohara, Yuh; Maeda, Toshihiko

    2004-01-01

    Epitaxial growth of NiO on a textured Ni substrate as a template for an REBa 2 Cu 3 O y coated conductor was investigated. Highly in-plane aligned NiO layers were successfully fabricated using a new process of a two-step heat-treatment for oxidation. In the first-step, a highly in-plane aligned thin NiO layer was formed on a textured Ni substrate under a low driving force of oxidation. Then, in the second-step, a thick NiO layer was grown at a higher rate with maintaining its high in-plane grain alignment, as if the first NiO layer acts as a seed crystal layer. Further, growth rates and microstructures of the NiO layers were studied comparatively in the cases with and without the first layer. It was found that the oxidation rate in the case with the first layer was lower than that without the first layer. The microstructure observation revealed that the NiO without the first layer was poly-crystalline with many grain-boundaries. On the other hand, in the case with the first layer, grain-boundaries of the NiO were hardly observed. Hence, the reason for this difference of the growth rate and the microstructure of the NiO layers were discussed in view of a diffusivity path

  16. Preparation of p-type NiO films by reactive sputtering and their application to CdTe solar cells

    Science.gov (United States)

    Ishikawa, Ryousuke; Furuya, Yasuaki; Araki, Ryouichi; Nomoto, Takahiro; Ogawa, Yohei; Hosono, Aikyo; Okamoto, Tamotsu; Tsuboi, Nozomu

    2016-02-01

    Transparent p-type NiO films were prepared by reactive sputtering using the facing-target system under Ar-diluted O2 gas at Tsub of 30 and 200 °C. The increasing intensity of dominant X-ray diffraction (XRD) peaks indicates improvements in the crystallinity of NiO films upon Cu doping. In spite of the crystallographic and optical changes after Cu-doping, the electrical properties of Cu-doped NiO films were slightly improved. Upon Ag-doping at 30 °C under low O2 concentration, on the other hand, the intensity of the dominant (111) XRD peaks was suppressed and p-type conductivity increased from ˜10-3 to ˜10-1 S cm-1. Finally, our Ag-doped NiO films were applied as the back contact of CdTe solar cells. CdTe solar cells with a glass/ITO/CdS/CdTe/NiO structure exhibited an efficiency of 6.4%, suggesting the high potential of using p-type NiO for the back-contact film in thin-film solar cells.

  17. Electrodeposition of Manganese-Nickel Oxide Films on a Graphite Sheet for Electrochemical Capacitor Applications

    Directory of Open Access Journals (Sweden)

    Hae-Min Lee

    2014-01-01

    Full Text Available Manganese-nickel (Mn-Ni oxide films were electrodeposited on a graphite sheet in a bath consisting of manganese acetate and nickel chloride, and the structural, morphological, and electrochemical properties of these films were investigated. The electrodeposited Mn-Ni oxide films had porous structures covered with nanofibers. The X-ray diffractometer pattern revealed the presence of separate manganese oxide (g-MnO2 and nickel oxide (NiO in the films. The electrodeposited Mn-Ni oxide electrode exhibited a specific capacitance of 424 F/g in Na2SO4 electrolyte. This electrode maintained 86% of its initial specific capacitance over 2000 cycles of the charge-discharge operation, showing good cycling stability.

  18. Synthesis and characterization of n-type NiO:Al thin films for fabrication of p-n NiO homojunctions

    Science.gov (United States)

    Sun, Hui; Liao, Ming-Han; Chen, Sheng-Chi; Li, Zhi-Yue; Lin, Po-Chun; Song, Shu-Mei

    2018-03-01

    n-type NiO:Al thin films were deposited by RF magnetron sputtering. Their optoelectronic properties versus Al target power was investigated. The results show that with increasing Al target power, the conduction type of NiO films changes from p-type to n-type. The variation of the film’s electrical and optical properties depends on Al amount in the film. When Al target power is relatively low, Al3+ cations tend to enter nickel vacancy sites, which makes the lattice structure of NiO more complete. This improves the carrier mobility and film’s transmittance. However, when Al target power exceeds 40 W, Al atoms begin to enter into interstitial sites and form an Al cluster in the NiO film. This behavior is beneficial for improving the film’s n-type conductivity but degrades the film’s transmittance. Finally, Al/(p-type NiO)/(n-type NiO:Al)/ITO homojunctions were fabricated. Their performance was compared with Al/(p-type NiO)/ITO heterojunctions without an n-type NiO layer. Thanks to the better interface quality between the two NiO layers, the homojunctions present better performance.

  19. Iron-Treated NiO as a Highly Transparent p-Type Protection Layer for Efficient Si-Based Photoanodes

    DEFF Research Database (Denmark)

    Mei, Bastian Timo; Permyakova, Anastasia Aleksandrovna; Frydendal, Rasmus

    2014-01-01

    Sputter deposition of 50 nm thick NiO films on p+–n-Si and subsequent treatment in an Fe-containing electrolyte yielded highly transparent photoanodes capable of water oxidation (OER) in alkaline media (1 M KOH) with high efficiency and stability. The Fe treatment of NiO thin films enabled Si...

  20. Improvement of H2S Sensing Properties of SnO2-Based Thick Film Gas Sensors Promoted with MoO3 and NiO

    Directory of Open Access Journals (Sweden)

    In Sung Son

    2013-03-01

    Full Text Available The effects of the SnO2 pore size and metal oxide promoters on the sensing properties of SnO2-based thick film gas sensors were investigated to improve the detection of very low H2S concentrations (<1 ppm. SnO2 sensors and SnO2-based thick-film gas sensors promoted with NiO, ZnO, MoO3, CuO or Fe2O3 were prepared, and their sensing properties were examined in a flow system. The SnO2 materials were prepared by calcining SnO2 at 600, 800, 1,000 and 1,200 °C to give materials identified as SnO2(600, SnO2(800, SnO2(1000, and SnO2(1200, respectively. The Sn(12Mo5Ni3 sensor, which was prepared by physically mixing 5 wt% MoO3 (Mo5, 3 wt% NiO (Ni3 and SnO2(1200 with a large pore size of 312 nm, exhibited a high sensor response of approximately 75% for the detection of 1 ppm H2S at 350 °C with excellent recovery properties. Unlike the SnO2 sensors, its response was maintained during multiple cycles without deactivation. This was attributed to the promoter effect of MoO3. In particular, the Sn(12Mo5Ni3 sensor developed in this study showed twice the response of the Sn(6Mo5Ni3 sensor, which was prepared by SnO2(600 with the smaller pore size than SnO2(1200. The excellent sensor response and recovery properties of Sn(12Mo5Ni3 are believed to be due to the combined promoter effects of MoO3 and NiO and the diffusion effect of H2S as a result of the large pore size of SnO2.

  1. Optical and structural characterization of nickel oxide-based thin films obtained by chemical bath deposition

    International Nuclear Information System (INIS)

    Vidales-Hurtado, M.A.; Mendoza-Galvan, A.

    2008-01-01

    Nickel oxide-based thin films were obtained using the chemical bath deposition method on glass and silicon substrates. The precursor solution used was a mixture of nickel nitrate, urea, and deionized water. Molar concentration of nickel (0.3-1.0 M), deposition time, and immersing cycles were considered as deposition variables. Infrared spectroscopy and X-ray diffraction data reveal that all as-deposited films correspond to the transparent turbostratic phase α(II)-Ni(OH) 2 . However, the rate of deposition depends on nickel content in the solution. After annealing in air at temperatures above of 300 deg. C, the films are transformed to the NiO phase and show a grey/black color. In these films, scanning electron microscopy images show aggregates of thin stacked sheets on their surface, such aggregates can be easily removed leaving only a thin NiO layer of about 30 nm adhered firmly to the substrate, regardless of nickel concentration in the solution and deposition time. In order to obtain thicker NiO films with good optical properties a procedure is developed performing several immersing-annealing cycles

  2. Aluminum doped nickel oxide thin film with improved electrochromic performance from layered double hydroxides precursor in situ pyrolytic route

    International Nuclear Information System (INIS)

    Shi, Jingjing; Lai, Lincong; Zhang, Ping; Li, Hailong; Qin, Yumei; Gao, Yuanchunxue; Luo, Lei; Lu, Jun

    2016-01-01

    Electrochromic materials with unique performance arouse great interest on account of potential application values in smart window, low-power display, automobile anti-glare rearview mirror, and e-papers. In this paper, high-performing Al-doped NiO porous electrochromic film grown on ITO substrate has been prepared via a layered double hydroxides(LDHs) precursor in situ pyrolytic route. The Al 3+ ions distributed homogenously within the NiO matrix can significantly influence the crystallinity of Ni-Al LDH and NiO:Al 3+ films. The electrochromic performance of the films were evaluated by means of UV–vis absorption spectroscopy, cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS), and chronoamperometry(CA) measurements. In addition, the ratio of Ni 3+ /Ni 2+ also varies with Al content which can lead to different electrochemical performances. Among the as-prepared films, NiO film prepared from Ni-Al (19:1) LDH show the best electrochromic performance with a high transparency of 96%, large optical modulation range (58.4%), fast switching speed (bleaching/coloration times are 1.8/4.2 s, respectively) and excellent durability (30% decrease after 2000 cycles). The improved performance was owed to the synergy of large NiO film specific surface area and porous morphology, as well as Al doping stifled the formation of Ni 3+ making bleached state more pure. This LDHs precursor pyrolytic method is simple, low-cost and environmental benign and is feasible for the preparation of NiO:Al and other Al-doped oxide thin film. - Graphical abstract: The ratio of Ni 3+ /Ni 2+ varies with Al content which can lead to different electrochemical performances. Among the as-prepared films, NiO film prepared from Ni-Al (19:1) LDH show the best electrochromic performance with a high transparency of 96%, large optical modulation range, fast switching speed and excellent durability. Display Omitted

  3. Nickel Oxide (NiO nanoparticles prepared by solid-state thermal decomposition of Nickel (II schiff base precursor

    Directory of Open Access Journals (Sweden)

    Aliakbar Dehno Khalaji

    2015-06-01

    Full Text Available In this paper, plate-like NiO nanoparticles were prepared by one-pot solid-state thermal decomposition of nickel (II Schiff base complex as new precursor. First, the nickel (II Schiff base precursor was prepared by solid-state grinding using nickel (II nitrate hexahydrate, Ni(NO32∙6H2O, and the Schiff base ligand N,N′-bis-(salicylidene benzene-1,4-diamine for 30 min without using any solvent, catalyst, template or surfactant. It was characterized by Fourier Transform Infrared spectroscopy (FT-IR and elemental analysis (CHN. The resultant solid was subsequently annealed in the electrical furnace at 450 °C for 3 h in air atmosphere. Nanoparticles of NiO were produced and characterized by X-ray powder diffraction (XRD at 2θ degree 0-140°, FT-IR spectroscopy, scanning electron microscopy (SEM and transmission electron microscopy (TEM. The XRD and FT-IR results showed that the product is pure and has good crystallinity with cubic structure because no characteristic peaks of impurity were observed, while the SEM and TEM results showed that the obtained product is tiny, aggregated with plate-like shape, narrow size distribution with an average size between 10-40 nm. Results show that the solid state thermal decomposition method is simple, environmentally friendly, safe and suitable for preparation of NiO nanoparticles. This method can also be used to synthesize nanoparticles of other metal oxides.

  4. Co-sintering of CGO/NIO-CGO bilayers for solid oxide fuel cell

    International Nuclear Information System (INIS)

    Neto, P.P.B.; Grilo, J.P.F.; Souza, G.L.; Macedo, D.A.; Paskocimas, C.A.; Nascimento, R.M.

    2012-01-01

    Reducing the operating temperature of solid oxide fuel cells (SOFC) for the range between 500 and 700°C is one of the challenges which more has aroused the interest of research in SOFC in recent years. In this context, the bilayer anode/electrolyte composed of a porous support based on Ni-doped ceria (anode) and a ceria doped gadolinia (CGO) electrolyte, presents itself as one of the half-cell configurations of the most interest towards the production of electricity in the operating logic of a SOFC. In this work, CGO films were successfully prepared on NiO-CGO substrates using the resources of the screen-printing technique. The bi-layers were co-sintered between 1350 and 1450 ° C for 4 h and then characterized by scanning electron microscopy and energy dispersive X-ray spectroscopy (EDS). The results showed good adhesion at the film/substrate interface and no cracks in the films. (author)

  5. Controlled p-type to n-type conductivity transformation in NiO thin films by ultraviolet-laser irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Pranav; Dutta, Titas; Mal, Siddhartha; Narayan, Jagdish [Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27606 (United States)

    2012-01-01

    We report the systematic changes in structural, electrical, and optical properties of NiO thin films on c-sapphire introduced by nanosecond ultraviolet excimer laser pulses. Epitaxial nature of as deposited NiO was determined by x-ray diffraction phi scans and transmission electron microscopy (TEM) and it was established that NiO film growth takes place with twin domains on sapphire where two types of domains have 60 deg. in-plane rotation with respect to each other about the [111] growth direction. We determined that at pulsed laser energy density of 0.275 J/cm{sup 2}, NiO films exhibited conversion from p-type semiconducting to n-type conductive behavior with three orders of magnitude decrease in resistivity, while maintaining its cubic crystal structure and good epitaxial relationship. Our TEM and electron-energy-loss spectroscopy studies conclusively ruled out the presence of any Ni clustering or precipitation due to the laser treatment. The laser-induced n-type carrier transport and conductivity enhancement were shown to be reversible through subsequent thermal annealing in oxygen. This change in conductivity behavior was correlated with the nonequilibrium concentration of laser induced Ni{sup 0}-like defect states.

  6. Photoelectrochemical Water Oxidation by GaAs Nanowire Arrays Protected with Atomic Layer Deposited NiO x Electrocatalysts

    Science.gov (United States)

    Zeng, Joy; Xu, Xiaoqing; Parameshwaran, Vijay; Baker, Jon; Bent, Stacey; Wong, H.-S. Philip; Clemens, Bruce

    2018-02-01

    Photoelectrochemical (PEC) hydrogen production makes possible the direct conversion of solar energy into chemical fuel. In this work, PEC photoanodes consisting of GaAs nanowire (NW) arrays were fabricated, characterized, and then demonstrated for the oxygen evolution reaction (OER). Uniform and periodic GaAs nanowire arrays were grown on a heavily n-doped GaAs substrates by metal-organic chemical vapor deposition selective area growth. The nanowire arrays were characterized using cyclic voltammetry and impedance spectroscopy in a non-aqueous electrochemical system using ferrocene/ferrocenium (Fc/Fc+) as a redox couple, and a maximum oxidation photocurrent of 11.1 mA/cm2 was measured. GaAs NW arrays with a 36 nm layer of nickel oxide (NiO x ) synthesized by atomic layer deposition were then used as photoanodes to drive the OER. In addition to acting as an electrocatalyst, the NiO x layer served to protect the GaAs NWs from oxidative corrosion. Using this strategy, GaAs NW photoanodes were successfully used for the oxygen evolution reaction. This is the first demonstration of GaAs NW arrays for effective OER, and the fabrication and protection strategy developed in this work can be extended to study any other nanostructured semiconductor materials systems for electrochemical solar energy conversion.

  7. Corrosion behavior of TiO{sub 2}-NiO nanocomposite thin films on AISI 316L stainless steel prepared by sol-gel method

    Energy Technology Data Exchange (ETDEWEB)

    Cheraghi, H., E-mail: hoch2020@yahoo.com [Materials Science and Engineering Department, Iran University of Science and Technology (IUST), P.O. Box: 16765163, Narrmak Street, Tehran (Iran, Islamic Republic of); Shahmiri, M., E-mail: mshahmiri@iust.ac.ir [Materials Science and Engineering Department, Iran University of Science and Technology (IUST), P.O. Box: 16765163, Narrmak Street, Tehran (Iran, Islamic Republic of); Sadeghian, Z. [Research Institute of Petroleum Industry (RIPI), P.O. Box: 14857-3311, West Blvd. Azadi Sport Complex, Tehran (Iran, Islamic Republic of)

    2012-11-01

    TiO{sub 2}-NiO nanocomposite thin films were deposited on the 316L stainless steel using sol-gel method by a dip coating technique. Different techniques such as differential thermal analysis, thermogravimetric analysis, X-ray diffraction, Fourier transform infrared spectrometry, scanning electron microscopy and scanning probe microscopy were carried out in order to characterize the structure of the coatings. The corrosion resistance of the coatings was evaluated by using Tafel polarization and electrochemical impedance spectroscopy tests of uncoated and coated specimens in a 3.5% NaCl solution at room temperature. It was found that to obtain desirable structure in coatings, the coatings should be calcined at 600 Degree-Sign C for one and half hour. NiTiO{sub 3}, anatase and rutile were the phases obtained in different calcination conditions in air atmosphere. The results of corrosion tests indicated that with increasing the dipping times from 2 to 4, the corrosion current density first decreases but when increasing the dipping times to 6, it increases. Also the corrosion current density decreased from 186.7 nA.cm{sup -2} (uncoated steel) to 34.21 nA.cm{sup -2} (80%TiO{sub 2}-20%NiO) and corrosion potential increased from - 150.2 mV (uncoated steel) to - 107.3 mV (67%TiO{sub 2}-33%NiO). - Highlights: Black-Right-Pointing-Pointer TiO{sub 2}-NiO thin films were deposited on the 316L stainless steel using sol-gel method. Black-Right-Pointing-Pointer Different compositions, annealing times and temperatures resulted in various phases. Black-Right-Pointing-Pointer Films having different compositions showed various surface morphologies. Black-Right-Pointing-Pointer Films having a composition of 80%TiO{sub 2}-20%NiO showed a good corrosion protection.

  8. Lithium insertion in sputtered vanadium oxide film

    DEFF Research Database (Denmark)

    West, K.; Zachau-Christiansen, B.; Skaarup, S.V.

    1992-01-01

    were oxygen deficient compared to V2O5. Films prepared in pure argon were reduced to V(4) or lower. The vanadium oxide films were tested in solid-state lithium cells. Films sputtered in oxygen showed electrochemical properties similar to crystalline V2O5. The main differences are a decreased capacity...

  9. Filmes de titânio-silício preparados por "spin" e "dip-coating"

    Directory of Open Access Journals (Sweden)

    Nassar Eduardo J.

    2003-01-01

    Full Text Available The conditions for the preparation of luminescent materials, consisting of Eu3+ ions entrapped in a titanium matrix, in the forma of a thin film, using the sol-gel process, are described. The films were obtained from sols prepared with TEOS and TEOT, in the presence of acetylacetone as the hidrolysis-retarding agent, using the dip-coating and spin-coating techniques. The influence of these techniques on the films based on titanium and silicon are presented. The Eu3+ was used as a luminescent probe. The films have been characterized by luminescence, reflection and transmittance. The thickness of the films could be related to the preparation procedure. Transparent thin films have been prepared by dip-coating technique.

  10. Electrical conductivity and oxygen exchange kinetics of La2NiO4+delta thin films grown by chemical vapor deposition

    DEFF Research Database (Denmark)

    Garcia, G.; Burriel, M.; Bonanos, Nikolaos

    2008-01-01

    Epitaxial c-axis oriented La2NiO4+delta films were deposited onto SrTiO3 and NdGaO3 substrates by the pulsed injection metal organic chemical vapor deposition technique. Experimental conditions were optimized in order to accurately control the composition, thickness, and texture of the layers. X......-ray diffraction was used to confirm the high crystalline quality of the obtained material. Electrical characterizations were performed on thin (50 nm) and thick (335 nm) layers. The total specific conductivity, which is predominantly electronic, was found to be larger for the thinner films measured (50 nm......), probably due to the effect of the strain present in the layers. Those thin films (50 nm) showed values even larger than those observed for single crystals and, to our knowledge, are the largest conductivity values reported to date for the La2NiO4+delta material. The oxygen exchange kinetics was studied...

  11. In situ photoelectrochemistry and Raman spectroscopic characterization on the surface oxide film of nickel electrode in 30 wt.% KOH solution

    International Nuclear Information System (INIS)

    Nan Junmin; Yang Yong; Lin Zugeng

    2006-01-01

    The oxide films of nickel electrode formed in 30 wt.% KOH solution under potentiodynamic conditions were characterized by means of electrochemical, in situ PhotoElectrochemistry Measurement (PEM) and Confocal Microprobe Raman spectroscopic techniques. The results showed that a composite oxide film was produced on nickel electrode, in which aroused cathodic or anodic photocurrent depending upon polarization potentials. The cathodic photocurrent at -0.8 V was raised from the amorphous film containing nickel hydroxide and nickel monoxide, and mainly attributed to the formation of NiO through the separation of the cavity and electron when laser light irradiates nickel electrode. With the potential increasing to more positive values, Ni 3 O 4 and high-valence nickel oxides with the structure of NiO 2 were formed successively. The composite film formed in positive potential aroused anodic photocurrent from 0.33 V. The anodic photocurrent was attributed the formation of oxygen through the cavity reaction with hydroxyl on solution interface. In addition, it is demonstrated that the reduction resultants of high-valence nickel oxides were amorphous, and the oxide film could not be reduced completely. A stable oxide film could be gradually formed on the surface of nickel electrode with the cycling and aging in 30 wt.% KOH solution

  12. Effect of nickel oxide seed layers on annealed-amorphous titanium oxide thin films prepared using plasma-enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Wu, Cheng-Yang; Hong, Shao-Chyang; Hwang, Fu-Tsai; Lai, Li-Wen; Lin, Tan-Wei; Liu, Day-Shan

    2011-01-01

    The effect of a nickel oxide (NiO x ) seed layer on the crystallization and photocatalytic activity of the sequentially plasma-enhanced chemical vapor deposited amorphous titanium oxide (TiO x ) thin film processed by a post-annealing process was investigated. The evolution of the crystalline structures, chemical bond configurations, and surface/cross-sectional morphologies of the annealed TiO x films, with and without a NiO x seed layer, was examined using X-ray diffractometer, Fourier transform infrared spectrometry, X-ray photoelectron spectroscopy, atomic force microscopy, and field emission scanning electron microscope measurements. Thermo- and photo-induced hydrophilicity was determined by measuring the contact angle of water droplet. Photocatalytic activity after UV light irradiation was evaluated from the decolorization of a methylene blue solution. The crystallization temperature of the TiO x film, deposited on a NiO x seed layer, was found to be lower than that of a pure TiO x film, further improving the thermo- and photo-induced surface super-hydrophilicity. The TiO x film deposited onto the NiO x seed layer, resulting in significant cluster boundaries, showed a rough surface morphology and proved to alleviate the anatase crystal growth by increasing the post-annealing temperature, which yielded a more active surface area and prohibited the recombination of photogenerated electrons and holes. The photocatalytic activity of the NiO x /TiO x system with such a textured surface therefore was enhanced and optimized through an adequate post-annealing process.

  13. Well-dispersed NiO nanoparticles supported on nitrogen-doped carbon nanotube for methanol electrocatalytic oxidation in alkaline media

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Pengcheng; Zhou, Yingke, E-mail: zhouyk888@hotmail.com; Hu, Min; Chen, Jian

    2017-01-15

    Highlights: • Nitrogen-doped carbon nanotube supporting ultrafine NiO nanoparticles with high dispersity are facile synthesized. • The nitrogen doping, calcination temperature and NiO loading present great effects on the catalyst morphology, structure and electrochemical performance. • NiO-NCNT-3x-400 demonstrates remarkable catalytic activity and stability for the methanol electrolytic oxidation reaction. - Abstract: Nitrogen-doped carbon nanotube supporting NiO nanoparticles were synthesized by a chemical precipitation process coupled with subsequent calcination. The morphology and structure of the composites were characterized by transmission electron microscopy (TEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), and the electrochemical performance was evaluated using cyclic voltammetry and chronoamperometric technique. The effects of nitrogen doping, calcination temperature and content of NiO nanoparticles on the electrocatalytic activity toward methanol oxidation were systematically studied. The results show that the uniformly dispersed ultrafine NiO nanoparticles supported on nitrogen-doped carbon nanotube are obtained after calcination at 400 °C. The optimized composite catalysts present high electrocatalytic activity, fast charge-transfer process, excellent accessibility and stability for methanol oxidation reaction, which are promising for application in the alkaline direct methanol fuel cells.

  14. Structural, optical and electrical characteristics of nickel oxide thin films synthesised through chemical processing method

    Science.gov (United States)

    Akinkuade, Shadrach; Mwankemwa, Benanrd; Nel, Jacqueline; Meyer, Walter

    2018-04-01

    A simple and cheap chemical deposition method was used to produce a nickel oxide (NiO) thin film on glass substrates from a solution that contained Ni2+ and monoethanolamine. Thermal treatment of the film at temperatures above 350 °C for 1 h caused decomposition of the nickel hydroxide into nickel oxide. Structural, optical and electrical properties of the film were studied using X-ray diffraction (XRD), spectrophotometry, current-voltage measurements and scanning electron microscopy (SEM). The film was found to be polycrystalline with interplanar spacing of 0.241 nm, 0.208 nm and 0.148 nm for (111), (200) and (220) planes respectively, the lattice constant a was found to be 0.417 nm. The film had a porous surface morphology, formed from a network of nanowalls of average thickness of 66.67 nm and 52.00 nm for as-deposited and annealed films respectively. Transmittance of visible light by the as-deposited film was higher and the absorption edge of the film blue-shifted after annealing. The optical band gap of the annealed film was 3.8 eV. Electrical resistivity of the film was 378 Ωm.

  15. "Estudo comaparativo das densidades radiográficas de diferentes filmes periapicais obtidas por meio da análise computadorizada em valores de alumínio-equivalente"

    OpenAIRE

    Felipe Paes Varoli

    2004-01-01

    RESUMO O objetivo deste estudo foi obter as densidades radiográficas de diferentes filmes periapicais por meio de um programa computadorizado que utiliza a imagem equivalente em alumínio (alumínio-equivalente). Avaliaram-se os filmes Agfa Dentus M2 “Comfort”, Kodak InSight, Kodak Ektaspeed Plus, Kodak Ultra-speed e Kodak D. Todos foram expostos aos raios X juntamente com um escalímetro de Alumínio, variando-se o tempo de exposição (0,1 a 1 segundo). Após a leitura das densidades radiográfica...

  16. Excimer laser assisted re-oxidation of BaTiO3 thin films on Ni metal foils

    International Nuclear Information System (INIS)

    Bharadwaja, S. S. N.; Ko, S. W.; Qu, W.; Clark, T.; Rajashekhar, A.; Motyka, M.; Podraza, N.; Randall, C. A.; Trolier-McKinstry, S.

    2016-01-01

    Excimer laser assisted re-oxidation for reduced, crystallized BaTiO 3 thin films on Ni-foils was investigated. It was found that the BaTiO 3 can be re-oxidized at an oxygen partial pressure of ∼50 mTorr and substrate temperature of 350 °C without forming a NiO x interface layer between the film and base metal foil. The dielectric permittivity of re-oxidized films was >1000 with loss tangent values <2% at 100 Hz, 30 mV rms excitation signal. Electron Energy Loss Spectroscopy indicated that BaTiO 3 thin films can be re-oxidized to an oxygen stoichiometry close to ∼3 (e.g., stoichiometric). High resolution cross sectional transmission electron microscopy showed no evidence of NiO x formation between the BaTiO 3 and the Ni foil upon excimer laser re-oxidation. Spectroscopic ellipsometry studies on laser re-oxidized [001] C and [111] C BaTiO 3 single crystals indicate that the re-oxidation of BaTiO 3 single crystals is augmented by photo-excitation of the ozone, as well as laser pulse induced temperature and local stress gradients

  17. Pyro-Electrochemical Reduction of a Mixture of Rare Earth Oxides and NiO in LiCl molten Salt

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Min Woo; Jeong, Sang Mun [Department of Chemical Engineering, Chungbuk National University, Cheongju (Korea, Republic of)

    2017-06-15

    An electrochemical reduction of a mixture of NiO and rare earth oxides has been conducted to increase the reduction degree of rare earth oxides. Cyclic voltammetry (CV) measurement was carried out to determine the electrochemical reduction behavior of the mixed oxide in molten LiCl medium. Constant voltage electrolysis was performed with various supplied charges to understand the mechanism of electrochemical reduction of the mixed oxide as a working electrode. After completion of the electrochemical reduction, crystal structure of the reaction intermediates was characterized by using an X-ray diffraction method. The results clearly demonstrate that the rare earth oxide was converted to RE-Ni intermetallics via co-reduction with NiO.

  18. Water clustering on nanostructured iron oxide films

    DEFF Research Database (Denmark)

    Merte, Lindsay Richard; Bechstein, Ralf; Peng, G.

    2014-01-01

    , but it is not well-understood how these hydroxyl groups and their distribution on a surface affect the molecular-scale structure at the interface. Here we report a study of water clustering on a moire-structured iron oxide thin film with a controlled density of hydroxyl groups. While large amorphous monolayer...... islands form on the bare film, the hydroxylated iron oxide film acts as a hydrophilic nanotemplate, causing the formation of a regular array of ice-like hexameric nanoclusters. The formation of this ordered phase is localized at the nanometre scale; with increasing water coverage, ordered and amorphous...

  19. Electrical and optical properties of zinc oxide: thin films

    International Nuclear Information System (INIS)

    Zuhairusnizam Md Darus; Abdul Jalil Yeop Majlis; Anis Faridah Md Nor; Burhanuddin Kamaluddin

    1992-01-01

    Zinc oxide films have been prepared by high temperature oxidation of thermally evaporated zinc films on glass substrates. The resulting films are characterized using X-ray diffraction, optical absorption and electrical conductivity measurements. These zinc oxide films are very transparent and photoconductive

  20. Laser patterning of superconducting oxide films

    International Nuclear Information System (INIS)

    Gupta, A.; Hussey, B.W.; Koren, G.; Cooper, E.I.; Jagannathan, R.

    1988-01-01

    The focused output of an argon ion laser (514.5 nm) has been used for wiring superconducting lines of Y/sub 1/Ba/sub 2/CU/sub 3/O/sub 7-δ/ using films prepared from nitrate and trifluoroacetate solution precursors. A stoichiometric solution of the precursors is sprayed or spun on to the substrate to form a film. The film is patterned by irradiating in selected areas to convert the irradiated layers to an intermediate oxide or fluoride state, the nonirradiated areas being unchanged. The nonirradiated areas are then dissolved away, leaving a pattern of the oxide or fluoride material. This patterned layer is converted to the superconducting 1-2-3 oxide in a subsequent annealing step. Maskless patterning of superconducting films has also been demonstrated by laser-assisted etching of the films in aqueous KOH solution. Although superconductivity is destroyed when the films are placed in solution, it can be restored after a brief anneal in oxygen

  1. Swelling of a Zirconium Oxide Film

    International Nuclear Information System (INIS)

    Henderson, Mark; Hawley, Adrian; White, John; Rennie, Adrian

    2005-01-01

    Full text: The structural changes that cause the change in the interlayer spacing of a surfactanttemplated zirconium oxide film have been studied using neutron diffractometry. We report that the film after drying on a glass substrate swells slightly through the addition of benzene by up to 4 Aangstroem on a lattice parameter of about 36 Aangstroem. The (001) and (002) diffraction peaks positions, widths and areas of a swollen film were then monitored by neutron diffraction as a function of benzene desorption. Disorder of the lamellar mesophase is considered as a cause of the observed effects on the diffraction signals. (authors)

  2. Swelling of a mesostructured zirconium oxide film

    Energy Technology Data Exchange (ETDEWEB)

    Henderson, M.J. [Research School of Chemistry, Australian National University, Canberra, ACT 0200 (Australia); Rennie, A.R. [Uppsala University, Studsvik Neutron Research Laboratory, S-611 82 Nykoeping (Sweden); Hawley, A.M. [Research School of Chemistry, Australian National University, Canberra, ACT 0200 (Australia); White, J.W. [Research School of Chemistry, Australian National University, Canberra, ACT 0200 (Australia)]. E-mail: jww@rsc.anu.edu.au

    2006-11-15

    The structural changes that cause the change in interlayer spacing of a surfactant-templated zirconium oxide film have been studied using neutron diffractometry. We report that the film after drying on a glass substrate swells slightly through the addition of benzene by up to 4 A on a lattice parameter of about 36 A. The (0 0 1) and (0 0 2) diffraction peak widths, positions and areas of a swollen film were monitored as a function of benzene desorption. Disorder of the lamellar mesophase is considered as a cause of the observed effects on the diffraction signals.

  3. Aluminum doped nickel oxide thin film with improved electrochromic performance from layered double hydroxides precursor in situ pyrolytic route

    Energy Technology Data Exchange (ETDEWEB)

    Shi, Jingjing; Lai, Lincong; Zhang, Ping; Li, Hailong; Qin, Yumei; Gao, Yuanchunxue; Luo, Lei; Lu, Jun, E-mail: lujun@mail.buct.edu.cn

    2016-09-15

    Electrochromic materials with unique performance arouse great interest on account of potential application values in smart window, low-power display, automobile anti-glare rearview mirror, and e-papers. In this paper, high-performing Al-doped NiO porous electrochromic film grown on ITO substrate has been prepared via a layered double hydroxides(LDHs) precursor in situ pyrolytic route. The Al{sup 3+} ions distributed homogenously within the NiO matrix can significantly influence the crystallinity of Ni-Al LDH and NiO:Al{sup 3+} films. The electrochromic performance of the films were evaluated by means of UV–vis absorption spectroscopy, cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS), and chronoamperometry(CA) measurements. In addition, the ratio of Ni{sup 3+}/Ni{sup 2+} also varies with Al content which can lead to different electrochemical performances. Among the as-prepared films, NiO film prepared from Ni-Al (19:1) LDH show the best electrochromic performance with a high transparency of 96%, large optical modulation range (58.4%), fast switching speed (bleaching/coloration times are 1.8/4.2 s, respectively) and excellent durability (30% decrease after 2000 cycles). The improved performance was owed to the synergy of large NiO film specific surface area and porous morphology, as well as Al doping stifled the formation of Ni{sup 3+} making bleached state more pure. This LDHs precursor pyrolytic method is simple, low-cost and environmental benign and is feasible for the preparation of NiO:Al and other Al-doped oxide thin film. - Graphical abstract: The ratio of Ni{sup 3+}/Ni{sup 2+} varies with Al content which can lead to different electrochemical performances. Among the as-prepared films, NiO film prepared from Ni-Al (19:1) LDH show the best electrochromic performance with a high transparency of 96%, large optical modulation range, fast switching speed and excellent durability. Display Omitted.

  4. Swift heavy ion induced de wetting of metal oxide thin films on silicon

    International Nuclear Information System (INIS)

    Bolse, T.; Paulus, H.; Bolse, W.

    2006-01-01

    We have observed that thin oxide coatings (NiO, Fe 2 O 3 ) tend to dewet their Si substrate when being bombarded with swift heavy ions (350-600 MeV Au ions) even though the irradiation was carried out about 80 K and hence, the films never reached their melting point. Scanning electron and atomic force microscopy reveal a surprising similarity of the dewetting morphologies with those observed for molten polymer films on Si, which have recently been reported by others [S. Herminghaus, K. Jakobs, K. Mecke, J. Bischof, A. Fery, M. Ibn-Elhaj, S. Schlagowsky, Science 282 (1998) 916; R. Seemann, S. Herminghaus, K. Jacobs, J. Phys.: Condens. Matter 13 (2001) 4925]. Like in that cases also here heterogeneous and homogeneous hole nucleation could be identified. Heterogeneous nucleation is less pronounced in Fe 2 O 3 /Si than in NiO/Si. The occurrence of spinodal-like dewetting cannot be detected unambiguously. The dewetting kinetics were determined by means of Rutherford backscattering spectroscopy and found to slightly differ for the two compounds. The dewetting kinetics as well as the final dewetting pattern strongly depend on the initial film thicknesses. No dewetting occurs for film thicknesses above about 150 nm, while for very small thicknesses below about 40 nm the film decays into nm-sized spherical droplets. At intermediate film thicknesses percolated networks of small oxide bridges are formed

  5. Aluminum oxide film thickness and emittance

    International Nuclear Information System (INIS)

    Thomas, J.K.; Ondrejcin, R.S.

    1991-11-01

    Aluminum reactor components which are not actively cooled could be subjected to high temperatures due to gamma heating after the core coolant level dropped during the ECS phase of a hypothetical LOCA event. Radiative heat transfer is the dominant heat transfer process in this scenario and therefore the emittance of these components is of interest. Of particular interest are the safety rod thimbles and Mark 60B blanket assemblies; for the K Reactor, these components have been exposed to low temperature (< 55 degrees C) moderator for about a year. The average moderator temperature was assumed to be 30 degrees C. The Al oxide film thickness at this temperature, after one year of exposure, is predicted to be 6.4 μm ± 10%; insensitive to exposure time. Dehydration of the film during the gamma heating accident would result in a film thickness of 6.0 μm ± 11%. Total hemispherical emittance is predicted to be 0.69 at 96 degrees C, decreasing to 0.45 at 600 degrees C. Some phenomena which would tend to yield thicker oxide films in the reactor environment relative to those obtained under experimental conditions were neglected and the predicted film thickness values are therefore conservative. The emittance values predicted for a given film thickness are also conservative. The conservativisms inherent in the predicted emittance are particularly relevant for uncertainty analysis of temperatures generated using these values

  6. Magnetic properties of partially oxidized Fe films

    Science.gov (United States)

    Garcia, Miguel Angel; Lopez-Dominguez, Victor; Hernando, Antonio

    Hybrid magnetic nanostructures exhibit appealing properties due to interface and proximity effects. A simple and interesting system of hybrid magnetic nanomaterials are partially oxidized ferromagnetic films. We have fabricated Fe films by thermal evaporation and performed a partial oxidation to magnetite (Fe3O4) by annealing in air at different times and temperatures. The magnetic properties of the films evolve from those of pure metallic iron to pure magnetite, showing intermediate states where the proximity effects control the magnetic behavior. At some stages, the magnetization curves obtained by SQUID and MOKE magnetometry exhibit important differences due to the dissimilar contribution of both phases to the magneto-optical response of the system This work has been supported by the Ministerio Español de Economia y Competitividad (MINECO) MAT2013-48009-C4-1. V.L.D and M.A.G. acknowledges financial support from BBVA foundation.

  7. Sputtered tin oxide and titanium oxide thin films as alternative transparent conductive oxides

    Energy Technology Data Exchange (ETDEWEB)

    Boltz, Janika

    2011-12-12

    Alternative transparent conductive oxides to tin doped indium oxide have been investigated. In this work, antimony doped tin oxide and niobium doped titanium oxide have been studied with the aim to prepare transparent and conductive films. Antimony doped tin oxide and niobium doped titanium oxide belong to different groups of oxides; tin oxide is a soft oxide, while titanium oxide is a hard oxide. Both oxides are isolating materials, in case the stoichiometry is SnO{sub 2} and TiO{sub 2}. In order to achieve transparent and conductive films free carriers have to be generated by oxygen vacancies, by metal ions at interstitial positions in the crystal lattice or by cation doping with Sb or Nb, respectively. Antimony doped tin oxide and niobium doped titanium oxide films have been prepared by reactive direct current magnetron sputtering (dc MS) from metallic targets. The process parameters and the doping concentration in the films have been varied. The films have been electrically, optically and structurally analysed in order to analyse the influence of the process parameters and the doping concentration on the film properties. Post-deposition treatments of the films have been performed in order to improve the film properties. For the deposition of transparent and conductive tin oxide, the dominant parameter during the deposition is the oxygen content in the sputtering gas. The Sb incorporation as doping atoms has a minor influence on the electrical, optical and structural properties. Within a narrow oxygen content in the sputtering gas highly transparent and conductive tin oxide films have been prepared. In this study, the lowest resistivity in the as deposited state is 2.9 m{omega} cm for undoped tin oxide without any postdeposition treatment. The minimum resistivity is related to a transition to crystalline films with the stoichiometry of SnO{sub 2}. At higher oxygen content the films turn out to have a higher resistivity due to an oxygen excess. After post

  8. Photoconduction in silicon rich oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Luna-Lopez, J A; Carrillo-Lopez, J; Flores-Gracia, F J; Garcia-Salgado, G [CIDS-ICUAP, Benemerita Universidad Autonoma de Puebla. Ed. 103 D and C, col. San Manuel, Puebla, Pue. Mexico 72570 (Mexico); Aceves-Mijares, M; Morales-Sanchez, A, E-mail: jluna@buap.siu.m, E-mail: jluna@inaoep.m [INAOE, Luis Enrique Erro No. 1, Apdo. 51, Tonantzintla, Puebla, Mexico 72000 (Mexico)

    2009-05-01

    Photoconduction of silicon rich oxide (SRO) thin films were studied by current-voltage (I-V) measurements, where ultraviolet (UV) and white (Vis) light illumination were applied. SRO thin films were deposited by low pressure chemical vapour deposition (LPCVD) technique, using SiH{sub 4} (silane) and N{sub 2}O (nitrous oxide) as reactive gases at 700 {sup 0}. The gas flow ratio, Ro = [N{sub 2}O]/[SiH{sub 4}] was used to control the silicon excess. The thickness and refractive index of the SRO films were 72.0 nm, 75.5 nm, 59.1 nm, 73.4 nm and 1.7, 1.5, 1.46, 1.45, corresponding to R{sub o} = 10, 20, 30 and 50, respectively. These results were obtained by null ellipsometry. Si nanoparticles (Si-nps) and defects within SRO films permit to obtain interesting photoelectric properties as a high photocurrent and photoconduction. These effects strongly depend on the silicon excess, thickness and structure type. Two different structures (Al/SRO/Si and Al/SRO/SRO/Si metal-oxide-semiconductor (MOS)-like structures) were fabricated and used as devices. The photocurrent in these structures is dominated by the generation of carriers due to the incident photon energies ({approx}3.0-1.6 eV and 5 eV). These structures showed large photoconductive response at room temperature. Therefore, these structures have potential applications in optoelectronics devices.

  9. Au Nanoparticle Sub-Monolayers Sandwiched between Sol-Gel Oxide Thin Films

    Science.gov (United States)

    Della Gaspera, Enrico; Menin, Enrico; Sada, Cinzia

    2018-01-01

    Sub-monolayers of monodisperse Au colloids with different surface coverage have been embedded in between two different metal oxide thin films, combining sol-gel depositions and proper substrates functionalization processes. The synthetized films were TiO2, ZnO, and NiO. X-ray diffraction shows the crystallinity of all the oxides and verifies the nominal surface coverage of Au colloids. The surface plasmon resonance (SPR) of the metal nanoparticles is affected by both bottom and top oxides: in fact, the SPR peak of Au that is sandwiched between two different oxides is centered between the SPR frequencies of Au sub-monolayers covered with only one oxide, suggesting that Au colloids effectively lay in between the two oxide layers. The desired organization of Au nanoparticles and the morphological structure of the prepared multi-layered structures has been confirmed by Rutherford backscattering spectrometry (RBS), Secondary Ion Mass Spectrometry (SIMS), and Scanning Electron Microscopy (SEM) analyses that show a high quality sandwich structure. The multi-layered structures have been also tested as optical gas sensors. PMID:29538338

  10. Oxide films on magnesium and magnesium alloys

    International Nuclear Information System (INIS)

    Shih, T.-S.; Liu, J.-B.; Wei, P.-S.

    2007-01-01

    Magnesium alloys are very active and readily ignite during heating and melting. In this study, we discuss the combustion of magnesium and magnesium alloys and propose prospective anti-ignition mechanisms for magnesium alloys during the heating process. When magnesium and magnesium alloys were heated in air, the sample surfaces produced layers of thermally formed oxides. These thermally formed oxides played an important role in affecting the combustion of the magnesium and magnesium alloys. When magnesium was heated in air, brucite that formed in the early stage was then transformed into periclase by dehydroxylation. By extending the heating time, more periclase formed and increased in thickness which was associated with microcracks formation. When magnesium was heated in a protective atmosphere (SF 6 ), a film of MgF 2 formed at the interface between the oxide layer and the Mg substrate. This film generated an anti-ignition behavior which protected the substrate from oxidation. When solution-treated AZ80 alloy was heated, spinel developed at the interface between the thermally formed oxide layer and the Mg substrate, improving the anti-ignition properties of the substrate. In addition, we also explain the effects of beryllium in an AZB91 alloy on the ignition-proofing behavior

  11. Metallic oxide switches using thick film technology

    Science.gov (United States)

    Patel, D. N.; Williams, L., Jr.

    1974-01-01

    Metallic oxide thick film switches were processed on alumina substrates using thick film technology. Vanadium pentoxide in powder form was mixed with other oxides e.g., barium, strontium copper and glass frit, ground to a fine powder. Pastes and screen printable inks were made using commercial conductive vehicles and appropriate thinners. Some switching devices were processed by conventional screen printing and firing of the inks and commercial cermet conductor terminals on 96% alumina substrates while others were made by applying small beads or dots of the pastes between platinum wires. Static, and dynamic volt-ampere, and pulse tests indicate that the switching and self-oscillatory characteristics of these devices could make them useful in memory element, oscillator, and automatic control applications.

  12. Chemically abrupt interface between Ce oxide and Fe films

    International Nuclear Information System (INIS)

    Lee, H.G.; Lee, D.; Kim, S.; Kim, S.G.; Hwang, Chanyong

    2005-01-01

    A chemically abrupt Fe/Ce oxide interface can be formed by initial oxidation of an Fe film followed by deposition of Ce metal. Once a Ce oxide layer is formed on top of Fe, it acts a passivation barrier for oxygen diffusion. Further deposition of Ce metal followed by its oxidation preserve the abrupt interface between Ce oxide and Fe films. The Fe and Ce oxidation states have been monitored at each stage using X-ray photoelectron spectroscopy

  13. Dye-sensitized PS-b-P2VP-templated nickel oxide films for photoelectrochemical applications

    OpenAIRE

    Massin, Julien; Bräutigam, Maximilian; Kaeffer, Nicolas; Queyriaux, Nicolas; Field, Martin J.; Schacher, Felix H.; Popp, Jürgen; Chavarot-Kerlidou, Murielle; Dietzek, Benjamin; Artero, Vincent

    2015-01-01

    Moving from homogeneous water-splitting photocatalytic systems to photoelectrochemical devices requires the preparation and evaluation of novel p-type transparent conductive photoelectrode substrates. We report here on the sensitization of polystyrene-block-poly-(2-vinylpyridine) (PS-b-P2VP) diblock copolymer-templated NiO films with an organic push–pull dye. The potential of these new templated NiO film preparations for photoelectrochemical applications is compared with NiO material template...

  14. Photoconductivity of reduced graphene oxide and graphene oxide composite films

    International Nuclear Information System (INIS)

    Liang, Haifeng; Ren, Wen; Su, Junhong; Cai, Changlong

    2012-01-01

    A photoconductive device was fabricated by patterning magnetron sputtered Pt/Ti electrode and Reduced Graphene Oxide (RGO)/Graphene Oxide (GO) composite films with a sensitive area of 10 × 20 mm 2 . The surface morphology of as-deposited GO films was observed by scanning electronic microscopy, optical microscopy and atomic force microscopy, respectively. The absorption properties and chemical structure of RGO/GO composite films were obtained using a spectrophotometer and an X-ray photoelectron spectroscopy. The photoconductive properties of the system were characterized under white light irradiation with varied output power and biased voltage. The results show that the resistance decreased from 210 kΩ to 11.5 kΩ as the irradiation power increased from 0.0008 mW to 625 mW. The calculated responsiveness of white light reached 0.53 × 10 −3 A/W. Furthermore, the device presents a high photo-conductivity response and displays a photovoltaic response with an open circuit voltage from 0.017 V to 0.014 V with irradiation power. The sources of charge are attributed to efficient excitation dissociation at the interface of the RGO/GO composite film, coupled with cross-surface charge percolation.

  15. Investigation of ferromagnetism in oxygen deficient hafnium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hildebrandt, Erwin; Kurian, Jose; Krockenberger, Yoshiharu; Alff, Lambert [Institut fuer Materialwissenschaft, TU Darmstadt (Germany); Suter, Andreas [PSI, Villingen (Switzerland); Wilhelm, Fabrice; Rogalev, Andrei [ESRF, Grenoble (France)

    2008-07-01

    Oxygen deficient thin films of hafnium oxide were grown on single crystal r-cut and c-cut sapphire by reactive molecular beam epitaxy. RF-activated oxygen was used for the in situ oxidation of hafnium oxide thin films. Oxidation conditions were varied substantially in order to create oxygen deficiency in hafnium oxide films intentionally. The films were characterized by X-ray and magnetic measurements. X-ray diffraction studies show an increase in lattice parameter with increasing oxygen deficiency. Oxygen deficient hafnium oxide thin films also showed a decreasing bandgap with increase in oxygen deficiency. The magnetisation studies carried out with SQUID did not show any sign of ferromagnetism in the whole oxygen deficiency range. X-ray magnetic circular dichroism measurements also confirmed the absence of ferromagnetism in oxygen deficient hafnium oxide thin films.

  16. Synthesis of Octahedral-Shaped NiO and Approaches to an Anode Material of Manufactured Solid Oxide Fuel Cells Using the Decalcomania Method

    Directory of Open Access Journals (Sweden)

    Haeran Cho

    2013-01-01

    Full Text Available Micrometer-sized and octahedral-shaped NiO particles were synthesized by microwave thermal treatment at 300 watt power for 15 min in a microwave chamber to be used as an anode material in solid oxide fuel cells. SEM image and particle size distribution revealed near-perfect octahedral NiO microparticle with sizes ranging from 4.0~11.0 μm. The anode functional layer (AFL, 60 wt% NiO synthesized: commercial 40 wt% YSZ, electrolyte (commercial Yttria-stabilized zirconia, YSZ, and cathode (commercial La0.8Sr0.2MnO3, LSM layers were manufactured using the decalcomania method on a porous anode support, sequentially. The sintered electrolyte at 1450°C for 2 h using the decalcomania method was dense and had a thickness of about 10 μm. The cathode was sintered at 1250°C for 2 h, and it was porous. Using humidified hydrogen as a fuel, a coin cell with a 15 μm thick anode functional layer exhibited maximum power densities of 0.28, 0.38, and 0.65 W/cm2 at 700, 750, and 800°C, respectively. Otherwise, when a commercial YSZ anode functional layer was used, the maximum power density was 0.55 W/cm2 at 800°C.

  17. High photocurrent gain in NiO thin film/M-doped ZnO nanorods (M=Ag, Cd and Ni) heterojunction based ultraviolet photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Echresh, Ahmad, E-mail: ahmadechresh@gmail.com [Department of Science and Technology, Physical Electronics and Nanotechnology Division, Campus Norrköping, Linköping University, SE-601 74 Norrköping (Sweden); Echresh, Mohammad [Department of Physics, Sanati Hoveizeh University, Ahvaz (Iran, Islamic Republic of); Khranovskyy, Volodymyr [Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-5818358183 Linköping (Sweden); Nur, Omer; Willander, Magnus [Department of Science and Technology, Physical Electronics and Nanotechnology Division, Campus Norrköping, Linköping University, SE-601 74 Norrköping (Sweden)

    2016-10-15

    The thermal evaporation method has been used to deposit p-type NiO thin film, which was combined with hydrothermally grown n-type pure and M-doped ZnO nanorods (M=Ag, Cd and Ni) to fabricate a high performance p-n heterojunction ultraviolet photodiodes. The fabricated photodiodes show high rectification ratio and relatively low leakage current. The p-NiO/n-Zn{sub 0.94}Ag{sub 0.06}O heterojunction photodiode displays the highest photocurrent gain (~1.52×10{sup 4}), a photoresponsivity of ~4.48×10{sup 3} AW{sup −1} and a photosensitivity of ~13.56 compared with the other fabricated photodiodes. The predominated transport mechanisms of the p-n heterojunction ultraviolet photodiodes at low and high applied forward bias may be recombination-tunneling and space charge limited current, respectively.

  18. Deposition and characterisation of epitaxial oxide thin films for SOFCs

    KAUST Repository

    Santiso, José ; Burriel, Mó nica

    2010-01-01

    This paper reviews the recent advances in the use of thin films, mostly epitaxial, for fundamental studies of materials for solid oxide fuel cell (SOFC) applications. These studies include the influence of film microstructure, crystal orientation

  19. An investigation of thin-film Ni-Fe oxide catalysts for the electrochemical evolution of oxygen.

    Science.gov (United States)

    Louie, Mary W; Bell, Alexis T

    2013-08-21

    A detailed investigation has been carried out of the structure and electrochemical activity of electrodeposited Ni-Fe films for the oxygen evolution reaction (OER) in alkaline electrolytes. Ni-Fe films with a bulk and surface composition of 40% Fe exhibit OER activities that are roughly 2 orders of magnitude higher than that of a freshly deposited Ni film and about 3 orders of magnitude higher than that of an Fe film. The freshly deposited Ni film increases in activity by as much as 20-fold during exposure to the electrolyte (KOH); however, all films containing Fe are stable as deposited. The oxidation of Ni(OH)2 to NiOOH in Ni films occurs at potentials below the onset of the OER. Incorporation of Fe into the film increases the potential at which Ni(OH)2/NiOOH redox occurs and decreases the average oxidation state of Ni in NiOOH. The Tafel slope (40 mV dec(-1)) and reaction order in OH(-) (1) for the mixed Ni-Fe films (containing up to 95% Fe) are the same as those for aged Ni films. In situ Raman spectra acquired in 0.1 M KOH at OER potentials show two bands characteristic of NiOOH. The relative intensities of these bands vary with Fe content, indicating a change in the local environment of Ni-O. Similar changes in the relative intensities of the bands and an increase in OER activity are observed when pure Ni films are aged. These observations suggest that the OER is catalyzed by Ni in Ni-Fe films and that the presence of Fe alters the redox properties of Ni, causing a positive shift in the potential at which Ni(OH)2/NiOOH redox occurs, a decrease in the average oxidation state of the Ni sites, and a concurrent increase in the activity of Ni cations for the OER.

  20. Structural characterization of PbTi03, Sm0.6Nd0.4NiO3 and NdMnO3 multifunctional Perovskite thin films

    Directory of Open Access Journals (Sweden)

    Rapenne L.

    2012-06-01

    Full Text Available Different multifunctional (PbTiO3, Sm0.6Nd0.4NiO3, NdMnO3 thin films were grown by metalorganic chemical vapor deposition (MOCVD technique on SrTiO3 and LaAlO3 substrates. TEM and X-ray diffraction measurements reveal that almost single crystalline thin films can be epitaxially grown on the top of substrates. The relationship between the crystallographic orientation of the films and those of the substrates were determined by reciprocal space mapping and TEM analyses. PbTi03 thin films appear to be under tensile or compressive strain according to the different mismatch of their cell parameter with those of the substrate. Relaxation mechanism as a function of the film thickness arises from coexistence of different type of domains and size and strain effect are analyzed. SmNiO3 thin films present diffuse scattering strikes and are less well organized when compared to PbTi03 thin films. Different domains are observed as well as an additional parasitic phase close to NiO. Its regular distribution can be associated to reduced transport properties. Preliminary observations on NdMnO3 thin films show that an amorphous phase is obtained during MOCVD that can be transformed in a single crystalline film by annealing. The films are under tensile or compressive strain according to the different mismatch of their cell parameter with those of the substrate. Magnetic properties are investigated.

  1. K-edge resonant x-ray magnetic scattering from a transition-metal oxide: NiO

    DEFF Research Database (Denmark)

    Hill, J.P.; Kao, C.C.; McMorrow, D.F.

    1997-01-01

    We report the observation of resonant x-ray magnetic scattering in the vicinity of the Ni K edge in the antiferromagnet NiO. An approximately twofold increase in the scattering is observed as the incident photon energy is tuned through a pre-edge feature in the absorption spectrum, associated...

  2. Characterization of zirconium alloy oxidation films by alternating current impedance

    International Nuclear Information System (INIS)

    Rosecrans, P.M.

    1984-01-01

    Kinetics of zirconium alloy oxidation are highly nonlinear. The results of electrochemical measurements and electron microscopy support the existence of porosity in oxide films formed on zirconium alloys in high temperature aqueous environments. Analytical treatment is presented relating oxidation kinetics to the thickness and distribution of nonporous elements within the oxide. This analysis illustrates that both the level and distribution of porosity within the oxide factor into oxidation kinetics. The barrier layer model can provide a basis for predicting the effect of environmental changes on oxidation rate. In addition, it demonstrates the need for further research into porosity generation mechanisms in oxide films

  3. Characterization of zirconium alloy oxidation films by alternating current impedance

    International Nuclear Information System (INIS)

    Rosecrans, P.M.

    1983-11-01

    Kinetics of zirocnium alloy oxidation are highly nonlinear. The results of electrochemical measurements and electron microscopy support the existence of porosity in oxide films formed on zirconium alloys in high temperature aqueous environments. Analytical treatment is presented relating oxidation kinetics to the thickness and distribution of nonporous elements within the oxide. This analysis illustrates that both the level and distribution of porosity within the oxide factor into oxidation kinetics. The barrier layer model can provide a basis for predicting the effect of environmental changes on oxidation rate. In addition, it demonstrates the need for further research into porosity generation mechanisms in oxide films

  4. Characterization of ultrasonic spray pyrolysed ruthenium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Patil, P.S.; Ennaoui, E.A.; Lokhande, C.D.; Mueller, M.; Giersig, M.; Diesner, K.; Tributsch, H. [Hahn-Meitner-Institut Berlin GmbH (Germany). Bereich Physikalische Chemie

    1997-11-21

    The ultrasonic spray pyrolysis (USP) technique was employed to deposit ruthenium oxide thin films. The films were prepared at 190 C substrate temperature and further annealed at 350 C for 30 min in air. The films were 0.22 {mu} thick and black grey in color. The structural, compositional and optical properties of ruthenium oxide thin films are reported. Contactless transient photoconductivity measurement was carried out to calculate the decay time of excess charge carriers in ruthenium oxide thin films. (orig.) 28 refs.

  5. Ce doped NiO nanoparticles as selective NO2 gas sensor

    Science.gov (United States)

    Gawali, Swati R.; Patil, Vithoba L.; Deonikar, Virendrakumar G.; Patil, Santosh S.; Patil, Deepak R.; Patil, Pramod S.; Pant, Jayashree

    2018-03-01

    Metal oxide gas sensors are promising portable gas detection devices because of their advantages such as low cost, easy production and compact size. The performance of such sensors is strongly dependent on material properties such as morphology, structure and doping. In the present study, we report the effect of cerium (Ce) doping on nickel oxide (NiO) nano-structured thin film sensors towards various gases. Bare NiO and Ce doped NiO nanoparticles (Ce:NiO) were synthesized by sol-gel method. To understand the effect of Ce doping in nickel oxide, various molar percentages of Ce with respect to nickel were incorporated. The structure, phase, morphology and band-gap energy of as-synthesized nanoparticles were studied by XRD, SEM, EDAX and UV-vis spectroscopy. Thin film gas sensors of all the samples were prepared and subjected to various gases such as LPG, NH3, CH3COCH3 and NO2. A systematic and comparative study reveals an enhanced gas sensing performance of Ce:NiO sensors towards NO2 gas. The maximum sensitivity for NO2 gas is around 0.719% per ppm at moderate operating temperature of 150 °C for 0.5% Ce:NiO thin film gas sensor. The enhanced gas sensing performance for Ce:NiO is attributed to the distortion of crystal lattice caused by doping of Ce into NiO.

  6. Bridging exchange bias effect in NiO and Ni(core)@NiO(shell) nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Rinaldi-Montes, Natalia, E-mail: nataliarin@gmail.com [Departamento de Física, Universidad de Oviedo, E-33007 Oviedo (Spain); Gorria, Pedro [Departamento de Física & IUTA, EPI, Universidad de Oviedo, E-33203 Gijón (Spain); Martínez-Blanco, David [Servicios Científico-Técnicos, Universidad de Oviedo, E-33006 Oviedo (Spain); Fuertes, Antonio B. [Instituto Nacional del Carbón, CSIC, E-33080 Oviedo (Spain); Fernández Barquín, Luis [CITIMAC, Facultad de Ciencias, Universidad de Cantabria, E-39005 Santander (Spain); Puente-Orench, Inés [Instituto de Ciencia de Materiales de Aragón, CSIC-Universidad de Zaragoza and Institut Laue-Langevin, BP 156, F-38042 Grenoble Cedex 9 (France); Blanco, Jesús A. [Departamento de Física, Universidad de Oviedo, E-33007 Oviedo (Spain)

    2016-02-15

    Among all bi-magnetic core(transition metal)@shell(transition metal oxide) nanoparticles (NPs), Ni@NiO ones show an onset temperature for the exchange bias (EB) effect far below the Néel temperature of bulk antiferromagnetic NiO. In this framework, the role played by the magnetism of NiO at the nanoscale is investigated by comparing the microstructure and magnetic properties of NiO and Ni@NiO NPs. With the aim of bridging the two systems, the diameter of the NiO NPs (~4 nm) is chosen to be comparable to the shell thickness of Ni@NiO ones (~2 nm). The EB effect in Ni@NiO NPs is attributed to the exchange coupling between the core and the shell, with an interfacial exchange energy of ΔE~0.06 erg cm{sup −2}, thus comparable to previous reports on Ni/NiO interfaces both in thin film and NP morphologies. In contrast, the EB detected in NiO NPs is explained in a picture where uncompensated spins located on a magnetically disordered surface shell are exchange coupled to the antiferromagnetic core. In all the studied NPs, the variation of the EB field as a function of temperature is described according to a negative exponential law with a similar decay constant, yielding a vanishing EB effect around T~40–50 K. In addition, the onset temperature for the EB effect in both NiO and Ni@NiO NPs seems to follow a universal dependence with the NiO crystallite size. - Highlights: • Comparison of the exchange bias effect in NiO and Ni(core)@NiO(shell) nanoparticles. • Universal temperature dependence of the exchange bias effect. • Suggested similar physical origin of the effect in both systems. • Size and crystallinity of the NiO shell hold the key for exchange bias properties.

  7. UV photodissociation spectroscopy of oxidized undecylenic acid films.

    Science.gov (United States)

    Gomez, Anthony L; Park, Jiho; Walser, Maggie L; Lin, Ao; Nizkorodov, Sergey A

    2006-03-16

    Oxidation of thin multilayered films of undecylenic (10-undecenoic) acid by gaseous ozone was investigated using a combination of spectroscopic and mass spectrometric techniques. The UV absorption spectrum of the oxidized undecylenic acid film is significantly red-shifted compared to that of the initial film. Photolysis of the oxidized film in the tropospheric actinic region (lambda > 295 nm) readily produces formaldehyde and formic acid as gas-phase products. Photodissociation action spectra of the oxidized film suggest that organic peroxides are responsible for the observed photochemical activity. The presence of peroxides is confirmed by mass-spectrometric analysis of the oxidized sample and an iodometric test. Significant polymerization resulting from secondary reactions of Criegee radicals during ozonolysis of the film is observed. The data strongly imply the importance of photochemistry in aging of atmospheric organic aerosol particles.

  8. Electrochromism of the electroless deposited cuprous oxide films

    International Nuclear Information System (INIS)

    Neskovska, R.; Ristova, M.; Velevska, J.; Ristov, M.

    2007-01-01

    Thin cuprous oxide films were prepared by a low cost, chemical deposition (electroless) method onto glass substrates pre-coated with fluorine doped tin oxide. The X-ray diffraction pattern confirmed the Cu 2 O composition of the films. Visible transmittance spectra of the cuprous oxide films were studied for the as-prepared, colored and bleached films. The cyclic voltammetry study showed that those films exhibited cathode coloring electrochromism, i.e. the films showed change of color from yellowish to black upon application of an electric field. The transmittance across the films for laser light of 670 nm was found to change due to the voltage change for about 50%. The coloration memory of those films was also studied during 6 h, ex-situ. The coloration efficiency at 670 nm was calculated to be 37 cm 2 /C

  9. Oxidation phase growth diagram of vanadium oxides film fabricated by rapid thermal annealing

    Institute of Scientific and Technical Information of China (English)

    Tamura KOZO; Zheng-cao LI; Yu-quan WANG; Jie NI; Yin HU; Zheng-jun ZHANG

    2009-01-01

    Thermal evaporation deposited vanadium oxide films were annealed in air by rapid thermal annealing (RTP). By adjusting the annealing temperature and time, a series of vanadium oxide films with various oxidation phases and surface morphologies were fabricated, and an oxidation phase growth diagram was established. It was observed that different oxidation phases appear at a limited and continuous annealing condition range, and the morphologic changes are related to the oxidation process.

  10. Synergistic Effect between Metal-Nitrogen-Carbon Sheets and NiO Nanoparticles for Enhanced Electrochemical Water-Oxidation Performance.

    Science.gov (United States)

    Wang, Jun; Li, Kai; Zhong, Hai-xia; Xu, Dan; Wang, Zhong-li; Jiang, Zheng; Wu, Zhi-jian; Zhang, Xin-bo

    2015-09-01

    Identifying effective means to improve the electrochemical performance of oxygen-evolution catalysts represents a significant challenge in several emerging renewable energy technologies. Herein, we consider metal-nitrogen-carbon sheets which are commonly used for catalyzing the oxygen-reduction reaction (ORR), as the support to load NiO nanoparticles for the oxygen-evolution reaction (OER). FeNC sheets, as the advanced supports, synergistically promote the NiO nanocatalysts to exhibit superior performance in alkaline media, which is confirmed by experimental observations and density functional theory (DFT) calculations. Our findings show the advantages in considering the support effect for designing highly active, durable, and cost-effective OER electrocatalysts. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Dewetting of nickel oxide-films on silicon under swift heavy ion irradiation

    International Nuclear Information System (INIS)

    Bolse, Thunu; Elsanousi, Ammar; Paulus, Hartmut; Bolse, Wolfgang

    2006-01-01

    Dewetting, occurring when a thin film on a non-wettable substrate turns into its liquid state, has gained strong interest during the last decade, since it results in nano-scale, large-area covering pattern formation. Recently we found that swift heavy ion (SHI) irradiation of thin NiO films on Si substrates at 80 K results in similar dewetting pattern, although in this case the coating has never reached its melting point. Careful inspection of the SEM images clearly revealed that the same nucleation mechanisms as observed for molten polymer films on Si (heterogeneous and homogeneous nucleation) were active. AFM shows that the circular holes formed in the early stages of the dewetting process exhibit a high and asymmetric rim-structure. RBS analysis was used to measure the coverage of the surface by the oxide films and revealed that the holes grow at constant velocity. This, and the shape of the rims, indicate that the material removed from the substrate surface piles up by plastic deformation, which points at a balance of the capillary driving forces and the hindered material dissipation

  12. Ultraviolet light-absorbing and emitting diodes consisting of a p-type transparent-semiconducting NiO film deposited on an n-type GaN homoepitaxial layer

    Science.gov (United States)

    Nakai, Hiroshi; Sugiyama, Mutsumi; Chichibu, Shigefusa F.

    2017-05-01

    Gallium nitride (GaN) and related (Al,Ga,In)N alloys provide practical benefits in the production of light-emitting diodes (LEDs) and laser diodes operating in ultraviolet (UV) to green wavelength regions. However, obtaining low resistivity p-type AlN or AlGaN of large bandgap energies (Eg) is a critical issue in fabricating UV and deep UV-LEDs. NiO is a promising candidate for useful p-type transparent-semiconducting films because its Eg is 4.0 eV and it can be doped into p-type conductivity of sufficiently low resistivity. By using these technologies, heterogeneous junction diodes consisting of a p-type transparent-semiconducting polycrystalline NiO film on an n-type single crystalline GaN epilayer on a low threading-dislocation density, free-standing GaN substrate were fabricated. The NiO film was deposited by using the conventional RF-sputtering method, and the GaN homoepitaxial layer was grown by metalorganic vapor phase epitaxy. They exhibited a significant photovoltaic effect under UV light and also exhibited an electroluminescence peak at 3.26 eV under forward-biased conditions. From the conduction and valence band (EV) discontinuities, the NiO/GaN heterointerface is assigned to form a staggered-type (TYPE-II) band alignment with the EV of NiO higher by 2.0 eV than that of GaN. A rectifying property that is consistent with the proposed band diagram was observed in the current-voltage characteristics. These results indicate that polycrystalline NiO functions as a hole-extracting and injecting layer of UV optoelectronic devices.

  13. Formation of corrosion-resistant oxide film on uranium

    International Nuclear Information System (INIS)

    Petit, G.S.

    1976-01-01

    A vacuum heat-treatment method was developed for coating metallic uranium with an adherent protective film of uranium oxide. The film is prepared by vacuum heat-treating the metallic uranium at 625 0 C for 1 h while controlling the amount of oxygen being metered into the furnace. Uranium coupons with the protective film were exposed for several hundred hours in a corrosion test bath at 95 0 C and 100 percent RH without corroding. Film thicknesses ranging from 5 to 25 μm (0.0002 to 0.001 in.) were prepared and corrosion tested; the film thickness can be controlled to less than +-2.5 μm (+-0.0001 in.). The oxide film is hard, nonwetting, and very adherent. The resulting surface finish of the metal is equivalent to that of the original finish. The advantages of the oxide films over other protective coatings are given. 12 fig

  14. Preparation and characterization of vanadium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Monfort, O.; Plesch, G. [Comenius University of Bratislava, Faculty of Natural Sciences, Department of Inorganic Chemistry, 84215 Bratislava (Slovakia); Roch, T. [Comenius University of Bratislava, Faculty of Mathematics Physics and Informatics, Department of Experimental Physics, 84248 Bratislava (Slovakia)

    2013-04-16

    The thermotropic VO{sub 2} films have many applications, since they exhibit semiconductor-conductor switching properties at temperature around 70 grad C. Vanadium oxide thin films were prepared via sol-gel method. Spin coater was used to depose these films on Si/SiO{sub 2} and lime glass substrates. Thin films of V{sub 2}O{sub 5} can be reduced to metastable VO{sub 2} thin films at the temperature of 450 grad C under the pressure of 10{sup -2} Pa. These films are then converted to thermotropic VO{sub 2} at 700 grad C in argon under normal pressure. (authors)

  15. ELECTROCHEMICAL DETERMINATION OF ETHANOL, 2- PROPANOL AND 1-BUTANOL ON GLASSY CARBON ELECTRODE MODIFIED WITH NICKEL OXIDE FILM

    Directory of Open Access Journals (Sweden)

    A. Benchettara

    2014-12-01

    Full Text Available In this work, we present the modification of a glassy carbon electrode with nickel oxide film which is performed in two successive steps. In the first one, the electrochemical deposition of metallic nickel on the glassy carbon electrode (GCE is achieved in 0.1M boric acid; in the second step, the metallic deposit is anodically oxidized in 0.1M NaOH. These two operations were carried out in a three electrode cell with a filiform platinum auxiliary electrode, a SCE as potential reference and a working microelectrode of modified glassy carbon with nickel oxides. This electrode is characterized by several electrochemical techniques and is used for the catalytic determination of ethanol, 2-propanol and 1-butanol in 0.1 M NaOH. The proposed chemical mechanism shows that NiO2 acts as a mediator.

  16. ELECTROCHEMICAL DETERMINATION OF ETHANOL, 2- PROPANOL AND 1-BUTANOL ON GLASSY CARBON ELECTRODE MODIFIED WITH NICKEL OXIDE FILM

    Directory of Open Access Journals (Sweden)

    A. Benchettara

    2015-07-01

    Full Text Available In this work, we present the modification of a glassy carbon electrode with nickel oxide film which is performed in two successive steps. In the first one, the electrochemical deposition of metallic nickel on the glassy carbon electrode (GCE is achieved in 0.1M boric acid; in the second step, the metallic deposit is anodically oxidized in 0.1M NaOH. These two operations were carried out in a three electrode cell with a filiform platinum auxiliary electrode, a SCE as potential reference and a working microelectrode of modified glassy carbon with nickel oxides. This electrode is characterized by several electrochemical techniques and is used for the catalytic determination of ethanol, 2-propanol and 1-butanol in 0.1 M NaOH. The proposed chemical mechanism shows that NiO2 acts as a mediator.

  17. Structure and morphology of ultrathin NiO layers on Ag(001)

    Energy Technology Data Exchange (ETDEWEB)

    Giovanardi, C.; Di Bona, A.; Altieri, S.; Luches, P.; Liberati, M.; Rossi, F.; Valeri, S

    2003-03-20

    The structure and morphology of thin NiO films prepared on Ag(001) by reactive growth at 460 K has been investigated as a function of the film thickness in the 3-20 monolayers range. Emphasis was on the study of the oxide layer misfit strain. Primary beam diffraction modulated electron emission and low energy electron diffraction experiments allowed the determination of the in-plane and out-of-plane strain in the oxide layer, while scanning tunneling microscopy, X-ray photoelectron spectroscopy and secondary electron imaging have been used to monitor the film morphology, stoichiometry and structure, respectively. The film strain begins to be removed at a critical thickness of 10 ML, while at 20 ML the film is fully relaxed. Strain analysis indicates that the Poisson ratio of the oxide layer is nearly equal to that of the bulk material.

  18. Valence control of cobalt oxide thin films by annealing atmosphere

    International Nuclear Information System (INIS)

    Wang Shijing; Zhang Boping; Zhao Cuihua; Li Songjie; Zhang Meixia; Yan Liping

    2011-01-01

    The cobalt oxide (CoO and Co 3 O 4 ) thin films were successfully prepared using a spin-coating technique by a chemical solution method with CH 3 OCH 2 CH 2 OH and Co(NO 3 ) 2 .6H 2 O as starting materials. The grayish cobalt oxide films had uniform crystalline grains with less than 50 nm in diameter. The phase structure is able to tailor by controlling the annealing atmosphere and temperature, in which Co 3 O 4 thin film was obtained by annealing in air at 300-600, and N 2 at 300, and transferred to CoO thin film by raising annealing temperature in N 2 . The fitted X-ray photoelectron spectroscopy (XPS) spectra of the Co2p electrons are distinguishable from different valence states of cobalt oxide especially for their satellite structure. The valence control of cobalt oxide thin films by annealing atmosphere contributes to the tailored optical absorption property.

  19. Refractory oxides containing aluminium and barium Oxidos refratários contendo alumínio e bário

    Directory of Open Access Journals (Sweden)

    T. J. Davies

    1998-10-01

    Full Text Available Oxides containing aluminium and barium, optionally with chromium, are refractory with several possible industrial uses. A gel precursor of an oxide having the formula BaO.n(Al2xCr2yO3, where 1Oxidos contendo alumínio e bário, opcionalmente com crômio, são refratários com vários possíveis usos industriais. Foi preparado um gel precursor de um óxido de formula BaO.n(Al2xCr2yO3, com 1nio ou uma solução de um sal de alumínio e um sal de cromo III, formando então um gel que é queimado para se obter o óxido desejado. Filamentos podem ser estraídos duramente a formação do gel ou extrudados de um gel semi-rígido. Estudos de infravermelho com transformada de Fourier, difração de raios X e ressonância magnética nuclear com 27AL mostraram que o bário não é incorporado diretamente na estrutura do gel. Oxidos de alumínio e bário foram obtidos somente após liquefação de espécies de bário. Foi preparada uma mistura de pós adequada para queima para se obter um óxido de fórmula BaO.m[Al2x Cr2y O3] com 4,6nio e bário. É feito um sumário de trabalhos anteriormente publicados.

  20. Cuprous oxide thin films grown by hydrothermal electrochemical deposition technique

    International Nuclear Information System (INIS)

    Majumder, M.; Biswas, I.; Pujaru, S.; Chakraborty, A.K.

    2015-01-01

    Semiconducting cuprous oxide films were grown by a hydrothermal electro-deposition technique on metal (Cu) and glass (ITO) substrates between 60 °C and 100 °C. X-ray diffraction studies reveal the formation of cubic cuprous oxide films in different preferred orientations depending upon the deposition technique used. Film growth, uniformity, grain size, optical band gap and photoelectrochemical response were found to improve in the hydrothermal electrochemical deposition technique. - Highlights: • Cu 2 O thin films were grown on Cu and glass substrates. • Conventional and hydrothermal electrochemical deposition techniques were used. • Hydrothermal electrochemical growth showed improved morphology, thickness and optical band gap

  1. Oxidation of ruthenium thin films using atomic oxygen

    Energy Technology Data Exchange (ETDEWEB)

    McCoy, A.P.; Bogan, J.; Brady, A.; Hughes, G.

    2015-12-31

    In this study, the use of atomic oxygen to oxidise ruthenium thin films is assessed. Atomic layer deposited (ALD) ruthenium thin films (~ 3 nm) were exposed to varying amounts of atomic oxygen and the results were compared to the impact of exposures to molecular oxygen. X-ray photoelectron spectroscopy studies reveal substantial oxidation of metallic ruthenium films to RuO{sub 2} at exposures as low as ~ 10{sup 2} L at 575 K when atomic oxygen was used. Higher exposures of molecular oxygen resulted in no metal oxidation highlighting the benefits of using atomic oxygen to form RuO{sub 2}. Additionally, the partial oxidation of these ruthenium films occurred at temperatures as low as 293 K (room temperature) in an atomic oxygen environment. - Highlights: • X-ray photoelectron spectroscopy study of the oxidation of Ru thin filmsOxidation of Ru thin films using atomic oxygen • Comparison between atomic oxygen and molecular oxygen treatments on Ru thin films • Fully oxidised RuO{sub 2} thin films formed with low exposures to atomic oxygen.

  2. Films based on oxidized starch and cellulose from barley.

    Science.gov (United States)

    El Halal, Shanise Lisie Mello; Colussi, Rosana; Deon, Vinícius Gonçalves; Pinto, Vânia Zanella; Villanova, Franciene Almeida; Carreño, Neftali Lenin Villarreal; Dias, Alvaro Renato Guerra; Zavareze, Elessandra da Rosa

    2015-11-20

    Starch and cellulose fibers were isolated from grains and the husk from barley, respectively. Biodegradable films of native starch or oxidized starches and glycerol with different concentrations of cellulose fibers (0%, 10% and 20%) were prepared. The films were characterized by morphological, mechanical, barrier, and thermal properties. Cellulose fibers isolated from the barley husk were obtained with 75% purity and high crystallinity. The morphology of the films of the oxidized starches, regardless of the fiber addition, was more homogeneous as compared to the film of the native starch. The addition of cellulose fibers in the films increased the tensile strength and decreased elongation. The water vapor permeability of the film of oxidized starch with 20% of cellulose fibers was lower than the without fibers. However the films with cellulose fibers had the highest decomposition with the initial temperature and thermal stability. The oxidized starch and cellulose fibers from barley have a good potential for use in packaging. The addition of cellulose fibers in starch films can contribute to the development of films more resistant that can be applied in food systems to maintain its integrity. Copyright © 2015 Elsevier Ltd. All rights reserved.

  3. Films of double oxides of zirconium and iron

    International Nuclear Information System (INIS)

    Kozik, V.V.; Borilo, L.P.; Shul'pekov, A.M.

    2000-01-01

    Films of double oxides of zirconium and iron were prepared by the method of precipitation from film-forming alcohol solutions of zirconium oxychloride and iron chloride with subsequent thermal treatment. Using the methods of X-ray phase and differential thermal analyses, conductometry and optical spectroscopy, basic chemical processes occurring in the film-forming solutions and during thermal treatment are studied alongside with phase composition and optical characteristics of the films prepared. The composition-property diagrams of the given system in a thin-film state are plotted [ru

  4. Electrochromic nickel oxide films and their compatibility with potassium hydroxide and lithium perchlorate in propylene carbonate: Optical, electrochemical and stress-related properties

    Energy Technology Data Exchange (ETDEWEB)

    Wen, Rui-Tao, E-mail: Ruitao.Wen@angstrom.uu.se; Niklasson, Gunnar A.; Granqvist, Claes G.

    2014-08-28

    Porous nickel oxide films were deposited onto unheated indium tin oxide coated glass substrates by reactive dc magnetron sputtering. These films had a cubic NiO structure. Electrochromic properties were evaluated in 1 M potassium hydroxide (KOH) and in 1 M lithium perchlorate in propylene carbonate (Li–PC). Large optical modulation was obtained for ∼ 500-nm-thick films both in KOH and in Li–PC (∼ 70% and ∼ 50% at 550 nm, respectively). In KOH, tensile and compressive stresses, due to the expansion and contraction of the lattice, were found for films in their bleached and colored state, respectively. In Li–PC, compressive stress was seen both in colored and bleached films. Durability tests with voltage sweeps between − 0.5 and 0.65 V vs Ag/AgCl in KOH showed good durability for 10,000 cycles, whereas voltage sweeps between 2.0 and 4.7 V vs Li/Li{sup +} in Li–PC yielded significant degradation after 1000 cycles. - Highlights: • Ni oxide films were studied in KOH and in LiClO{sub 4} + propylene carbonate (Li–PC). • Good electrochromism was found in both electrolytes. • In KOH, tensile/compressive stresses were seen in bleached/colored films. • In Li–PC, compressive stress was seen both in colored and bleached films.

  5. Electrochromic nickel oxide films and their compatibility with potassium hydroxide and lithium perchlorate in propylene carbonate: Optical, electrochemical and stress-related properties

    International Nuclear Information System (INIS)

    Wen, Rui-Tao; Niklasson, Gunnar A.; Granqvist, Claes G.

    2014-01-01

    Porous nickel oxide films were deposited onto unheated indium tin oxide coated glass substrates by reactive dc magnetron sputtering. These films had a cubic NiO structure. Electrochromic properties were evaluated in 1 M potassium hydroxide (KOH) and in 1 M lithium perchlorate in propylene carbonate (Li–PC). Large optical modulation was obtained for ∼ 500-nm-thick films both in KOH and in Li–PC (∼ 70% and ∼ 50% at 550 nm, respectively). In KOH, tensile and compressive stresses, due to the expansion and contraction of the lattice, were found for films in their bleached and colored state, respectively. In Li–PC, compressive stress was seen both in colored and bleached films. Durability tests with voltage sweeps between − 0.5 and 0.65 V vs Ag/AgCl in KOH showed good durability for 10,000 cycles, whereas voltage sweeps between 2.0 and 4.7 V vs Li/Li + in Li–PC yielded significant degradation after 1000 cycles. - Highlights: • Ni oxide films were studied in KOH and in LiClO 4 + propylene carbonate (Li–PC). • Good electrochromism was found in both electrolytes. • In KOH, tensile/compressive stresses were seen in bleached/colored films. • In Li–PC, compressive stress was seen both in colored and bleached films

  6. Growth of anodic oxide films on oxygen-containing niobium

    Energy Technology Data Exchange (ETDEWEB)

    Habazaki, H. [Graduate School of Engineering, Hokkaido University, Sapporo 060-8628 (Japan)]. E-mail: habazaki@eng.hokudai.ac.jp; Ogasawara, T. [Graduate School of Engineering, Hokkaido University, Sapporo 060-8628 (Japan); Konno, H. [Graduate School of Engineering, Hokkaido University, Sapporo 060-8628 (Japan); Shimizu, K. [University Chemical Laboratory, Keio University, Yokohama 223-8522 (Japan); Asami, K. [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); Saito, K. [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); Nagata, S. [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); Skeldon, P. [Corrosion and Protection Centre, School of Materials, The University of Manchester, P.O. Box 88, Manchester M60 1QD (United Kingdom); Thompson, G.E. [Corrosion and Protection Centre, School of Materials, The University of Manchester, P.O. Box 88, Manchester M60 1QD (United Kingdom)

    2005-09-20

    The present study is directed at understanding of the influence of oxygen in the metal on anodic film growth on niobium, using sputter-deposited niobium containing from about 0-52 at.% oxygen, with anodizing carried out at high efficiency in phosphoric acid electrolyte. The findings reveal amorphous anodic niobia films, with no significant effect of oxygen on the field strength, transport numbers, mobility of impurity species and capacitance. However, since niobium is partially oxidized due to presence of oxygen in the substrate, less charge is required to form the films, hence reducing the time to reach a particular film thickness and anodizing voltage. Further, the relative thickness of film material formed at the metal/film interface is increased by the incorporation of oxygen species into the films from the substrate, with an associated altered depth of incorporation of phosphorus species into the films.

  7. Photoconductivity of oxidized nanostructured PbTe(In) films

    International Nuclear Information System (INIS)

    Dobrovolsky, A A; Ryabova, L I; Khokhlov, D R; Dashevsky, Z M; Kasiyan, V A

    2009-01-01

    Photoconductivity of as-grown and oxidized nanocrystalline PbTe(In) films has been studied in the dc and ac modes at temperatures 4.2–300 K. The electric transport in the films is defined by two mechanisms: conductivity through barriers at grain boundaries and transport along inversion channels at the grain surface. Modification of the transport mechanisms induced by oxidation is considered. Relatively weak oxidation results in an increase in the contribution of grain barriers to conductivity followed by an enhancement of the photoconductivity amplitude. Instead, this contribution drops in the case of deep oxidation resulting in a photoresponse reduction. It is shown that the main mechanism of charge transport in deeply oxidized films at low temperatures is hopping along inversion channels at the grain surface. It is demonstrated that the photoconductive response of nanocrystalline materials may be optimized by variation of the oxidation level, measurement frequency and temperature

  8. Modulating Hole Transport in Multilayered Photocathodes with Derivatized p-Type Nickel Oxide and Molecular Assemblies for Solar-Driven Water Splitting

    Energy Technology Data Exchange (ETDEWEB)

    Shan, Bing [Department; Sherman, Benjamin D. [Department; Klug, Christina M. [Center; Nayak, Animesh [Department; Marquard, Seth L. [Department; Liu, Qing [Department; Bullock, R. Morris [Center; Meyer, Thomas J. [Department

    2017-08-31

    We report here a new photocathode composed of a bi-layered doped NiO film topped by a macro-mesoporous ITO (ioITO) layer with molecular assemblies attached to the ioITO surface. The NiO film containing a 2% K+ doped NiO inner layer and a 2% Cu2+ doped NiO outer layer provides sufficient driving force for hole transport after injection to NiO by the molecular assembly. The tri-layered oxide, NiK0.02O | NiCu0.02O | ioITO, sensitized by a ruthenium polypyridyl dye and functionalized with a nickel-based hydrogen evolution catalyst, outperforms its counterpart, NiO | NiO | ioITO, in photocatalytic hydrogen evolution from water over a period of several hours with a Faradaic yield of ~90%.

  9. Deposition and characterisation of epitaxial oxide thin films for SOFCs

    KAUST Repository

    Santiso, José

    2010-10-24

    This paper reviews the recent advances in the use of thin films, mostly epitaxial, for fundamental studies of materials for solid oxide fuel cell (SOFC) applications. These studies include the influence of film microstructure, crystal orientation and strain in oxide ionic conducting materials used as electrolytes, such as fluorites, and in mixed ionic and electronic conducting materials used as electrodes, typically oxides with perovskite or perovskite-related layered structures. The recent effort towards the enhancement of the electrochemical performance of SOFC materials through the deposition of artificial film heterostructures is also presented. These thin films have been engineered at a nanoscale level, such as the case of epitaxial multilayers or nanocomposite cermet materials. The recent progress in the implementation of thin films in SOFC devices is also reported. © 2010 Springer-Verlag.

  10. Nanocomposite oxide thin films grown by pulsed energy beam deposition

    International Nuclear Information System (INIS)

    Nistor, M.; Petitmangin, A.; Hebert, C.; Seiler, W.

    2011-01-01

    Highly non-stoichiometric indium tin oxide (ITO) thin films were grown by pulsed energy beam deposition (pulsed laser deposition-PLD and pulsed electron beam deposition-PED) under low oxygen pressure. The analysis of the structure and electrical transport properties showed that ITO films with a large oxygen deficiency (more than 20%) are nanocomposite films with metallic (In, Sn) clusters embedded in a stoichiometric and crystalline oxide matrix. The presence of the metallic clusters induces specific transport properties, i.e. a metallic conductivity via percolation with a superconducting transition at low temperature (about 6 K) and the melting and freezing of the In-Sn clusters in the room temperature to 450 K range evidenced by large changes in resistivity and a hysteresis cycle. By controlling the oxygen deficiency and temperature during the growth, the transport and optical properties of the nanocomposite oxide films could be tuned from metallic-like to insulating and from transparent to absorbing films.

  11. Preparation of nickel oxide thin films at different annealing temperature by sol-gel spin coating method

    Energy Technology Data Exchange (ETDEWEB)

    Abdullah, M. A. R., E-mail: ameerridhwan89@gmail.com; Mamat, M. H., E-mail: hafiz-030@yahoo.com; Ismail, A. S., E-mail: kyrin-samaxi@yahoo.com [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Malek, M. F., E-mail: firz-solarzelle@yahoo.com [NANO-SciTech Centre (NST), Institute of Science (IOS), Universiti Teknologi MARA - UiTM, 40450 Shah Alam, Selangor (Malaysia); Alrokayan, Salman A. H., E-mail: dr.salman@alrokayan.com; Khan, Haseeb A., E-mail: khan-haseeb@yahoo.com [Chair of Targeting and Treatment of Cancer Using Nanoparticles, Deanship of Scientific Research, King Saud University (KSU), Riyadh 11451 (Saudi Arabia); Rusop, M., E-mail: rusop@salam.uitm.my [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); NANO-SciTech Centre (NST), Institute of Science (IOS), Universiti Teknologi MARA - UiTM, 40450 Shah Alam, Selangor (Malaysia)

    2016-07-06

    Preparation of NiO thin films at different annealing temperature by sol-gel method was conducted to synthesize the quality of the surface thin films. The effects of annealing temperature on the surface topology were systematically investigated. Our studies confirmed that the surface roughness of the thin films was increased whenever annealing temperature was increase. NiO thin films morphology structure analysis was confirmed by field emission scanning electron microscope. Surface roughness of the thin films was investigated by atomic force microscopy.

  12. Preparation of nickel oxide thin films at different annealing temperature by sol-gel spin coating method

    International Nuclear Information System (INIS)

    Abdullah, M. A. R.; Mamat, M. H.; Ismail, A. S.; Malek, M. F.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.

    2016-01-01

    Preparation of NiO thin films at different annealing temperature by sol-gel method was conducted to synthesize the quality of the surface thin films. The effects of annealing temperature on the surface topology were systematically investigated. Our studies confirmed that the surface roughness of the thin films was increased whenever annealing temperature was increase. NiO thin films morphology structure analysis was confirmed by field emission scanning electron microscope. Surface roughness of the thin films was investigated by atomic force microscopy.

  13. Free standing graphene oxide film for hydrogen peroxide sensing

    Science.gov (United States)

    Ranjan, Pranay; Balakrishnan, Jayakumar; Thakur, Ajay D.

    2018-05-01

    We report hydrogen peroxide (H2O2)sensing using free standing graphene oxide thin films prepared using a cost effective scalable approach. Such sensors may find application in pharmaceutical and food processing industries.

  14. Chemical solution deposition of functional oxide thin films

    CERN Document Server

    Schneller, Theodor; Kosec, Marija

    2014-01-01

    Chemical Solution Deposition (CSD) is a highly-flexible and inexpensive technique for the fabrication of functional oxide thin films. Featuring nearly 400 illustrations, this text covers all aspects of the technique.

  15. Multiferroic iron oxide thin films at room temperature

    Czech Academy of Sciences Publication Activity Database

    Gich, M.; Fina, I.; Morelli, Alessio; Sánchez, F.; Alexe, M.; Gazquez, J.; Fontcuberta, J.; Roig, A.

    2014-01-01

    Roč. 26, č. 27 (2014), s. 4645-4652 ISSN 0935-9648 Institutional support: RVO:68378271 Keywords : multiferroic * iron oxide * thin film Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 17.493, year: 2014

  16. Oxide film assisted dopant diffusion in silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Tin, Chin-Che, E-mail: cctin@physics.auburn.ed [Department of Physics, Auburn University, Alabama 36849 (United States); Mendis, Suwan [Department of Physics, Auburn University, Alabama 36849 (United States); Chew, Kerlit [Department of Electrical and Electronic Engineering, Faculty of Engineering and Science, Universiti Tunku Abdul Rahman, Kuala Lumpur (Malaysia); Atabaev, Ilkham; Saliev, Tojiddin; Bakhranov, Erkin [Physical Technical Institute, Uzbek Academy of Sciences, 700084 Tashkent (Uzbekistan); Atabaev, Bakhtiyar [Institute of Electronics, Uzbek Academy of Sciences, 700125 Tashkent (Uzbekistan); Adedeji, Victor [Department of Chemistry, Geology and Physics, Elizabeth City State University, North Carolina 27909 (United States); Rusli [School of Electrical and Electronic Engineering, Nanyang Technological University (Singapore)

    2010-10-01

    A process is described to enhance the diffusion rate of impurities in silicon carbide so that doping by thermal diffusion can be done at lower temperatures. This process involves depositing a thin film consisting of an oxide of the impurity followed by annealing in an oxidizing ambient. The process uses the lower formation energy of silicon dioxide relative to that of the impurity-oxide to create vacancies in silicon carbide and to promote dissociation of the impurity-oxide. The impurity atoms then diffuse from the thin film into the near-surface region of silicon carbide.

  17. Oxide film assisted dopant diffusion in silicon carbide

    International Nuclear Information System (INIS)

    Tin, Chin-Che; Mendis, Suwan; Chew, Kerlit; Atabaev, Ilkham; Saliev, Tojiddin; Bakhranov, Erkin; Atabaev, Bakhtiyar; Adedeji, Victor; Rusli

    2010-01-01

    A process is described to enhance the diffusion rate of impurities in silicon carbide so that doping by thermal diffusion can be done at lower temperatures. This process involves depositing a thin film consisting of an oxide of the impurity followed by annealing in an oxidizing ambient. The process uses the lower formation energy of silicon dioxide relative to that of the impurity-oxide to create vacancies in silicon carbide and to promote dissociation of the impurity-oxide. The impurity atoms then diffuse from the thin film into the near-surface region of silicon carbide.

  18. Altering properties of cerium oxide thin films by Rh doping

    International Nuclear Information System (INIS)

    Ševčíková, Klára; Nehasil, Václav; Vorokhta, Mykhailo; Haviar, Stanislav; Matolín, Vladimír

    2015-01-01

    Highlights: • Thin films of ceria doped by rhodium deposited by RF magnetron sputtering. • Concentration of rhodium has great impact on properties of Rh–CeO x thin films. • Intensive oxygen migration in films with low concentration of rhodium. • Oxygen migration suppressed in films with high amount of Rh dopants. - Abstract: Ceria containing highly dispersed ions of rhodium is a promising material for catalytic applications. The Rh–CeO x thin films with different concentrations of rhodium were deposited by RF magnetron sputtering and were studied by soft and hard X-ray photoelectron spectroscopies, Temperature programmed reaction and X-ray powder diffraction techniques. The sputtered films consist of rhodium–cerium mixed oxide where cerium exhibits a mixed valency of Ce 4+ and Ce 3+ and rhodium occurs in two oxidation states, Rh 3+ and Rh n+ . We show that the concentration of rhodium has a great influence on the chemical composition, structure and reducibility of the Rh–CeO x thin films. The films with low concentrations of rhodium are polycrystalline, while the films with higher amount of Rh dopants are amorphous. The morphology of the films strongly influences the mobility of oxygen in the material. Therefore, varying the concentration of rhodium in Rh–CeO x thin films leads to preparing materials with different properties

  19. Multiferroicity in oxide thin films and heterostructures

    International Nuclear Information System (INIS)

    Glavic, Artur

    2012-01-01

    In this work a variety of different systems of transition metal oxides ABO 3 (perovskite materials, where B stands for a transition metal and A for a rare earth element) were produced as thin films and heterostructures and analyzed for the structural, magnetic and ferroelectric properties. For the epitaxial film preparation mostly pulse laser deposition (PLD) was applied. For one series high pressure oxide sputter deposition was used as well. The bulk multiferroics TbMnO 3 and DyMnO 3 , which develop their electric polarization due to a cycloidal magnetic order, have been prepared as single layers with thicknesses between 2 and 200 nm on YAlO 3 substrates using PLD and sputter deposition. The structural characterization of the surfaces and crystal structure where performed using X-ray reflectometry and diffraction, respectively. These yielded low surface roughness and good epitaxial growth. The magnetic behavior was macroscopically measured with SQUID magnetometry and microscopically with polarized neutron diffraction and resonant magnetic X-ray scattering. While all investigated samples showed antiferromagnetic order, comparable with the collinear magnetic phase of their bulk materials, only the sputter deposited samples exhibited the multiferroic low temperature cycloidal order. The investigation of the optical second harmonic generation in a TbMnO 3 sample could proof the presence of a ferroelectric order in the low temperature phase. The respective transition temperatures of the thin films have been very similar to those of the bulk materials. In contrast an increase in the rare earth ordering temperature has been observed, which reduces the Mn order slightly, an effect not known from bulk TbMnO 3 crystals. The coupling of the antiferromagnetic order in TbMnO 3 to ferromagnetic layers of LaCoO 3 was investigated in super-lattices containing 20 bilayers produced with PLD on the same substrates. The SQUID magnetometry yielded a strong influence of the

  20. Thin film ionic conductors based on cerium oxide

    International Nuclear Information System (INIS)

    Haridoss, P.; Hellstrom, E.; Garzon, F.H.; Brown, D.R.; Hawley, M.

    1994-01-01

    Fluorite and perovskite structure cerium oxide based ceramics are a class of materials that may exhibit good oxygen ion and/or protonic conductivity. The authors have successfully deposited thin films of these materials on a variety of substrates. Interesting orientation relationships were noticed between cerium oxide films and strontium titanate bi-crystal substrates. Near lattice site coincidence theory has been used to study these relationships

  1. Y-Ba-Cu-O superconducting film on oxidized silicon

    International Nuclear Information System (INIS)

    Gupta, R.P.; Khokle, W.S.; Dubey, R.C.; Singhal, S.; Nagpal, K.C.; Rao, G.S.T.; Jain, J.D.

    1988-01-01

    We report thick superconducting films of Y-Ba-Cu-O on oxidized silicon substrates. The critical temperatures for onset and zero resistance are 96 and 77 K, respectively. X-ray diffraction analysis predicts 1, 2, 3 composition and orthorhombic phase of the film

  2. Determination of oxygen diffusion kinetics during thin film ruthenium oxidation

    NARCIS (Netherlands)

    Coloma Ribera, R.; van de Kruijs, Robbert Wilhelmus Elisabeth; Yakshin, Andrey; Bijkerk, Frederik

    2015-01-01

    In situ X-ray reflectivity was used to reveal oxygen diffusion kinetics for thermal oxidation of polycrystalline ruthenium thin films and accurate determination of activation energies for this process. Diffusion rates in nanometer thin RuO2 films were found to show Arrhenius behaviour. However, a

  3. Ellipsometric investigations of pyrolytically deposited thin indium oxide films

    International Nuclear Information System (INIS)

    Winkler, U.

    1980-01-01

    Ellipsometric measurements have been carried out of thin indium oxide films deposited pyrolytically on glass substrates. It was found that the roughness of the films affected the measuring results. Therefore, only after applying a two-layer model a reasonable interpretation of the measuring results became possible

  4. Synthesis and electrical characterization of Graphene Oxide films

    International Nuclear Information System (INIS)

    Yasin, Muhammad; Tauqeer, T.; Zaidi, Syed M.H.; San, Sait E.; Mahmood, Asad; Köse, Muhammet E.; Canimkurbey, Betul; Okutan, Mustafa

    2015-01-01

    In this work, we have synthesized Graphene Oxide (GO) using modified Hummers method and investigated its electrical properties using parallel plate impedance spectroscopic technique. Graphene Oxide films were prepared using drop casting method on Indium Tin Oxide (ITO) coated glass substrate. Atomic force microscopy was used to characterize the films' microstructure and surface topography. Electrical characterization was carried out using LCR meter in frequency regime (100 Hz to 10 MHz) at different temperatures. AC conductivity σ ac of the films was observed to be varied with angular frequency, ω as ω S , with S < 1. The electrical properties of GO were found to be both frequency and temperature dependent. Analysis showed that GO film contains direct current (DC) and Correlated Barrier Hopping (CBH) conductivity mechanisms at low and high frequency ranges, respectively. Photon absorption and transmittance capability in the visible range and excellent electrical parameters of solution processed Graphene Oxide suggest its suitability for the realization of low cost flexible organic solar cells and organic Thin Film Transistors, respectively. - Highlights: • Synthesize and electrical characterization of Graphene Oxide (GO) Film was undertaken. • Temperature dependent impedance spectroscopy was used for electrical analysis. • AFM was used to characterize films' microstructure and surface topography. • Electrical parameters were found to vary with both temperature and frequency. • GO showed DC and CBH conductivity mechanisms at low and high frequency, respectively

  5. Electrochemical investigations of ion-implanted oxide films

    International Nuclear Information System (INIS)

    Schultze, J.W.; Danzfuss, B.; Meyer, O.; Stimming, U.

    1985-01-01

    Oxide films (passive films) of 40-50 nm thickness were prepared by anodic polarization of hafnium and titanium electrodes up to 20 V. Multiple-energy ion implantation of palladium, iron and xenon was used in order to obtain modified films with constant concentration profiles of the implanted ions. Rutherford backscattering, X-ray photoelectron spectroscopy measurements and electrochemical charging curves prove the presence of implanted ions, but electrochemical and photoelectrochemical measurements indicate that the dominating effect of ion implantation is the disordering of the oxide film. The capacity of hafnium electrodes increases as a result of an increase in the dielectric constant D. For titanium the Schottky-Mott analysis shows that ion implantation causes an increase in D and the donor concentration N. Additional electronic states in the band gap which are created by the implantation improve the conductivity of the semiconducting or insulating films. This is seen in the enhancement of electron transfer reactions and its disappearance during repassivation and annealing. Energy changes in the band gap are derived from photoelectrochemical measurements; the absorption edge of hafnium oxide films decreases by approximately 2 eV because of ion implantation, but it stays almost constant for titanium oxide films. All changes in electrochemical behavior caused by ion implantation show little variation with the nature of the implanted ion. Hence the dominating effect seems to be a disordering of the oxide. (Auth.)

  6. Chitosan/graphene oxide biocomposite film from pencil rod

    Science.gov (United States)

    Gea, S.; Sari, J. N.; Bulan, R.; Piliang, A.; Amaturrahim, S. A.; Hutapea, Y. A.

    2018-03-01

    Graphene Oxide (GO) has been succesfully synthesized using Hummber method from graphite powder of pencil rod. The excellent solubility of graphene oxide (GO)in water imparts its feasibilty as new filler for reinforcement hydrophilic biopolymers. In this research, the biocomposite film was fabricated from chitosan/graphene oxide. The characteristics of graphene oxide were investigated using Fourier Transform Infrared (FT-IR) and X-ray Diffraction (XRD). The results of the XRD showed graphene structur in 2θ, appeared at 9.0715°with interlayer spacing was about 9.74063Å. Preparation films with several variations of chitosan/graphene oxide was done by casting method and characterized by mechanical and morphological analysis. The mechanical properties of the tensile test in the film show that the film CS/GO (85: 15)% has the optimum Young’s modulus size of 2.9 GPa compared to other variations of CS / GO film. Morphological analysis film CS/GO (85:15)% by Scanning Electron Microscopy (SEM), the obtained biocomposites film showed fine dispersion of GO in the CS matrix and could mix each other homogeneously.

  7. Effect of annealing temperature on physical properties of solution processed nickel oxide thin films

    Science.gov (United States)

    Sahoo, Pooja; Thangavel, R.

    2018-05-01

    In this report, NiO thin films were prepared at different annealing temperatures from nickel acetate precursor by sol-gel spin coating method. These films were characterized by different analytical techniques to obtain their structural, optical morphological and electrical properties using X-ray diffractometer (XRD), Field emission scanning electron microscopy (FESEM), UV-Vis NIR double beam spectrophotometer and Keithley 2450 source meter respectively. FESEM images clearly indicates the formation of a homogenous and porous films. Due to their porosity, they can be used in sensing applications. The optical absorption spectra elucidated that the films are highly transparent and have a suitable band gap which are in similar agreement with earlier reports. The current enhancement under illumination shows the suitability of nanostructured NiO thin films in its application in photovoltaics.

  8. Mild and Efficient Oxidation of Aromatic Alcohols and Other Substrates Using NiO2/CH3COOH System

    Directory of Open Access Journals (Sweden)

    Mohammad Kooti

    2008-01-01

    Full Text Available A variety of aromatic alcohols were efficiently oxidized to their corresponding aldehydes and ketones in good to excellent yields using nickel peroxide activated by acetic acid. Some thiols and amines were also readily oxidized by this oxidant under mild conditions.

  9. Study of film graphene/graphene oxide obtained by partial reduction chemical of oxide graphite

    International Nuclear Information System (INIS)

    Gascho, J.L.S.; Costa, S.F.; Hoepfner, J.C.; Pezzin, S.H.

    2014-01-01

    This study investigated the morphology of graphene/graphene oxide film obtained by partial chemical reduction of graphite oxide (OG) as well as its resistance to solvents. Films of graphene/graphene oxide are great candidates for replacement of indium oxide doped with tin (ITO) in photoelectric devices. The OG was obtained from natural graphite, by Hummer's method modified, and its reduction is made by using sodium borohydride. Infrared spectroscopy analysis of Fourier transform (FTIR), Xray diffraction (XRD) and scanning electron microscopy, high-resolution (SEM/FEG) for the characterization of graphene/graphene oxide film obtained were performed. This film proved to be resilient, not dispersing in any of the various tested solvents (such as ethanol, acetone and THF), even under tip sonication, this resistance being an important property for the applications. Furthermore, the film had a morphology similar to that obtained by other preparation methods.(author)

  10. Unidirectional oxide hetero-interface thin-film diode

    International Nuclear Information System (INIS)

    Park, Youngmin; Lee, Eungkyu; Lee, Jinwon; Lim, Keon-Hee; Kim, Youn Sang

    2015-01-01

    The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10 5 at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10 2  Hz < f < 10 6  Hz, providing a high feasibility for practical applications

  11. Unidirectional oxide hetero-interface thin-film diode

    Energy Technology Data Exchange (ETDEWEB)

    Park, Youngmin; Lee, Eungkyu; Lee, Jinwon; Lim, Keon-Hee [Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-742 (Korea, Republic of); Kim, Youn Sang, E-mail: younskim@snu.ac.kr [Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-742 (Korea, Republic of); Advanced Institute of Convergence Technology, Gyeonggi-do 443-270 (Korea, Republic of)

    2015-10-05

    The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10{sup 5} at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10{sup 2} Hz < f < 10{sup 6} Hz, providing a high feasibility for practical applications.

  12. Processing of composites based on NiO, samarium-doped ceria and carbonates (NiO-SDCC as anode support for solid oxide fuel cells

    Directory of Open Access Journals (Sweden)

    Lily Siong Mahmud

    2017-09-01

    Full Text Available NiO-SDCC composites consisting of NiO mixed with Sm-doped ceria (SDC and carbonates (Li2CO3 and Na2CO3 were sintered at different temperatures and reduced at 550 °C. The influence of reduction on structure of the NiO-SDCC anode support for solid oxide fuel cells (SOFCs was investigated. Raman spectra of the NiO-SDCC samples sintered at 500, 600 and 700 °C showed that after reducing at 550 °C NiO was reduced to Ni. In addition, SDC and carbonates (Li2CO3 and Na2CO3 did not undergo chemical transformation after reduction and were still detected in the samples. However, no Raman modes of carbonates were identified in the NiO-SDCC pellet sintered at 1000 °C and reduced at 550 °C. It is suspected that carbonates were decomposed at high sintering temperature and eliminated due to the reaction between the CO32– and hydrogen ions during reduction in humidified gases at 550 °C. The carbonate decomposition increased porosity in the Ni-SDCC pellets and consequently caused formation of brittle and fragile structure unappropriated for SOFC application. Because of that composite NiO-SDC samples without carbonates were also analysed to determine the factors affecting the crack formation. In addition, it was shown that the different reduction temperatures also influenced the microstructure and porosity of the pellets. Thus, it was observed that Ni-SDC pellet reduced at 800 °C has higher electrical conductivity of well-connected microstructures and sufficient porosity than the pellet reduced at 550 °C.

  13. Elucidation of the electrochromic mechanism of nanostructured iron oxides films

    Energy Technology Data Exchange (ETDEWEB)

    Garcia-Lobato, M.A.; Martinez, Arturo I.; Castro-Roman, M. [Center for Research and Advanced Studies of the National Polytechnic Institute, Cinvestav Campus Saltillo, Carr. Saltillo-Monterrey Km. 13, Ramos Arizpe, Coah. 25900 (Mexico); Perry, Dale L. [Mail Stop 70A1150, Lawrence Berkeley National Laboratory, University of California, Berkeley, CA 94720 (United States); Zarate, R.A. [Departamento de Fisica, Facultad de Ciencias, Universidad Catolica del Norte, Casilla 1280, Antofagasta (Chile); Escobar-Alarcon, L. (Departamento de Fisica, Instituto Nacional de Investigaciones Nucleares, A.P. 18-1027, 11801 Mexico)

    2011-02-15

    Nanostructured hematite thin films were electrochemically cycled in an aqueous solution of LiOH. Through optical, structural, morphological, and magnetic measurements, the coloration mechanism of electrochromic iron oxide thin films was elucidated. The conditions for double or single electrochromic behavior are given in this work. During the electrochemical cycling, it was found that topotactic transformations of hexagonal crystal structures are favored; i.e. {alpha}-Fe{sub 2}O{sub 3} to Fe(OH){sub 2} and subsequently to {delta}-FeOOH. These topotactic redox reactions are responsible for color changes of iron oxide films. (author)

  14. Study of NiO cathode modified by rare earth oxide additive for MCFC by electrochemical impedance spectroscopy

    International Nuclear Information System (INIS)

    Huang Bo; Chen Gang; Li Fei; Yu Qingchun; Hu Keao

    2004-01-01

    The preparation and subsequent oxidation of nickel cathodes modified by impregnation with rare earth oxide were evaluated by surface and bulk analysis. The electrochemical behaviors of rare earth oxide impregnated nickel oxide cathodes were also evaluated in a molten 62 mol% Li 2 CO 3 +38 mol% K 2 CO 3 eutectic at 650 deg. C by electrochemical impedance spectroscopy (EIS) as a function of rare earth oxide content and immersion time. The rare earth oxide-impregnated nickel cathodes show almost the similar porosity, pore size, and morphology to the reference nickel cathode. The stability tests of rare earth oxide-impregnated nickel oxide cathodes show that the rare earth oxide additive can dramatically reduce the solubility of nickel oxide in a eutectic carbonate mixture under the standard cathode gas condition. The impedance response of all cathode materials at different immersion time is characterized by the presence of depressed semicircles in the high frequency range changing over into the lines with the angles of which observed with the real axis differing 45 deg. or 90 deg. in the low frequency range. The experimental Nyquist plots can be well analyzed theoretically with a modified model based on the well-known Randles-Ershler equivalent circuit model. In the new model, the double layer capacity (C d ) is replaced by the parallel combination of C d and b/ω; therefore, this circuit is modified to be the parallel combination of (C d ), b/ω, and the charge transfer resistance (R ct ) based on the Randles-Ershler equivalent circuit, to take into consideration both the non-uniformity of electric field at the electrode/electrolyte interface owing to the roughness of electrode surface, and the variety of relaxation times with adsorbed species on the electrode surface. The impedance spectra for all cathode materials show important variations during the 200 h of immersion. The incorporation of lithium in its structure and the low dissolution of nickel oxide and rare

  15. Photoinduced hydrophobic surface of graphene oxide thin films

    International Nuclear Information System (INIS)

    Zhang Xiaoyan; Song Peng; Cui Xiaoli

    2012-01-01

    Graphene oxide (GO) thin films were deposited on transparent conducting oxide substrates and glass slides by spin coating method at room temperature. The wettability of GO thin films before and after ultraviolet (UV) irradiation was characterized with water contact angles, which increased from 27.3° to 57.6° after 3 h of irradiation, indicating a photo-induced hydrophobic surface. The UV–vis absorption spectra, Raman spectroscopy, X-ray photoelectron spectroscopy, and conductivity measurements of GO films before and after UV irradiation were taken to study the mechanism of photoinduced hydrophobic surface of GO thin films. It is demonstrated that the photoinduced hydrophobic surface is ascribed to the elimination of oxygen-containing functional groups on GO molecules. This work provides a simple strategy to control the wettability properties of GO thin films by UV irradiation. - Highlights: ► Photoinduced hydrophobic surface of graphene oxide thin films has been demonstrated. ► Elimination of oxygen-containing functional groups in graphene oxide achieved by UV irradiation. ► We provide novel strategy to control surface wettability of GO thin films by UV irradiation.

  16. Synthesis and characterization of zinc oxide thin films prepared by ...

    African Journals Online (AJOL)

    Zinc oxide thin films were prepared with ammonia/ammonium chloride buffer as the reaction moderating agent in the chemical bath deposition technique. An observable color change during the reaction due to variations in the reactants concentration indicated the existence of the cupric (CuO) and cuprous (Cu2O) oxides ...

  17. Synthesis and characterization of thermally oxidized ZnO films

    Indian Academy of Sciences (India)

    Administrator

    Synthesis and characterization of thermally oxidized ZnO films. A P RAMBU1,* and N IFTIMIE2 .... R. −. Δ. = = (1) where Ra is the sensor resistance in the air and Rg is the .... ple, Aida and coworkers (2006) reported that the total oxidation is ...

  18. Dye-sensitized PS-b-P2VP-templated nickel oxide films for photoelectrochemical applications.

    Science.gov (United States)

    Massin, Julien; Bräutigam, Maximilian; Kaeffer, Nicolas; Queyriaux, Nicolas; Field, Martin J; Schacher, Felix H; Popp, Jürgen; Chavarot-Kerlidou, Murielle; Dietzek, Benjamin; Artero, Vincent

    2015-06-06

    Moving from homogeneous water-splitting photocatalytic systems to photoelectrochemical devices requires the preparation and evaluation of novel p-type transparent conductive photoelectrode substrates. We report here on the sensitization of polystyrene-block-poly-(2-vinylpyridine) (PS-b-P2VP) diblock copolymer-templated NiO films with an organic push-pull dye. The potential of these new templated NiO film preparations for photoelectrochemical applications is compared with NiO material templated by F108 triblock copolymers. We conclude that NiO films are promising materials for the construction of dye-sensitized photocathodes to be inserted into photoelectrochemical (PEC) cells. However, a combined effort at the interface between materials science and molecular chemistry, ideally funded within a Global Artificial Photosynthesis Project, is still needed to improve the overall performance of the photoelectrodes and progress towards economically viable PEC devices.

  19. Determination of oxygen diffusion kinetics during thin film ruthenium oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Coloma Ribera, R., E-mail: r.colomaribera@utwente.nl; Kruijs, R. W. E. van de; Yakshin, A. E.; Bijkerk, F. [MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands)

    2015-08-07

    In situ X-ray reflectivity was used to reveal oxygen diffusion kinetics for thermal oxidation of polycrystalline ruthenium thin films and accurate determination of activation energies for this process. Diffusion rates in nanometer thin RuO{sub 2} films were found to show Arrhenius behaviour. However, a gradual decrease in diffusion rates was observed with oxide growth, with the activation energy increasing from about 2.1 to 2.4 eV. Further exploration of the Arrhenius pre-exponential factor for diffusion process revealed that oxidation of polycrystalline ruthenium joins the class of materials that obey the Meyer-Neldel rule.

  20. Topological properties and functionalities in oxide thin films and interfaces

    Science.gov (United States)

    Uchida, Masaki; Kawasaki, Masashi

    2018-04-01

    As symbolized by the Nobel Prize in Physics 2016, ‘topology’ has been recognized as an essential standpoint to understand and control the physics of condensed matter. This concept may be spreading even into application areas such as novel electronics. In this trend, there has been reported a number of studies for oxide films and heterostructures with topologically non-trivial electronic or magnetic states. In this review, we overview the trends of new topological properties and functionalities in oxide materials by sorting out a number of examples. The technological advances in oxide film growth achieved over the last few decades are now opening the door for harnessing novel topological properties.

  1. Non-enzymatic hydrogen peroxide detection at NiO nanoporous thin film- electrodes prepared by physical vapor deposition at oblique angles

    International Nuclear Information System (INIS)

    Salazar, Pedro; Rico, Victor; González-Elipe, Agustín R.

    2017-01-01

    Highlights: • A non-enzymatic sensor for H 2 O 2 detection based on nickel thin film is reported. • Nanostructured nickel thin films are prepared by physical vapor deposition at oblique angles. • Main analytical parameters were obtained under optimal operation conditions. • Sensors depict an outstanding selectivity and a high stability. • Sensors are successfully used to determine H 2 O 2 in antiseptic solutions. - Abstract: In this work we report a non-enzymatic sensor for hydrogen peroxide (H 2 O 2 ) detection based on nanostructured nickel thin films prepared by physical vapor deposition at oblique angles. Porous thin films deposited on ITO substrates were characterized by X-ray diffraction analysis, scanning electron microcopy (SEMs), X-ray photoelectron spectroscopy (XPS) and electrochemical techniques such as Cyclic Voltammetry (CV) and Constant Potential Amperometry (CPA). The microstructure of the thin films consisted of inclined and separated Ni nanocolumns forming a porous thin layer of about 500 nm thickness. Prior to their use, the films surface was electrochemically modified and the chemical state studied by CV and XPS analysis. These techniques also showed that Ni 2+ /Ni 3+ species were involved in the electrochemical oxidation and detection of H 2 O 2 in alkaline medium. Main analytical parameters such as sensitivity (807 mA M −1 cm −2 ), limit of detection (3.22 μM) and linear range (0.011–2.4 mM) were obtained under optimal operation conditions. Sensors depicted an outstanding selectivity and a high stability and they were successfully used to determine H 2 O 2 concentration in commercial antiseptic solutions.

  2. Characterizations of photoconductivity of graphene oxide thin films

    Directory of Open Access Journals (Sweden)

    Shiang-Kuo Chang-Jian

    2012-06-01

    Full Text Available Characterizations of photoresponse of a graphene oxide (GO thin film to a near infrared laser light were studied. Results showed the photocurrent in the GO thin film was cathodic, always flowing in an opposite direction to the initial current generated by the preset bias voltage that shows a fundamental discrepancy from the photocurrent in the reduced graphene oxide thin film. Light illumination on the GO thin film thus results in more free electrons that offset the initial current. By examining GO thin films reduced at different temperatures, the critical temperature for reversing the photocurrent from cathodic to anodic was found around 187°C. The dynamic photoresponse for the GO thin film was further characterized through the response time constants within the laser on and off durations, denoted as τon and τoff, respectively. τon for the GO thin film was comparable to the other carbon-based thin films such as carbon nanotubes and graphenes. τoff was, however, much larger than that of the other's. This discrepancy was attributable to the retardation of exciton recombination rate thanks to the existing oxygen functional groups and defects in the GO thin films.

  3. High stability mechanisms of quinary indium gallium zinc aluminum oxide multicomponent oxide films and thin film transistors

    International Nuclear Information System (INIS)

    Lee, Ching-Ting; Lin, Yung-Hao; Lin, Jhong-Ham

    2015-01-01

    Quinary indium gallium zinc aluminum oxide (IGZAO) multicomponent oxide films were deposited using indium gallium zinc oxide (IGZO) target and Al target by radio frequency magnetron cosputtering system. An extra carrier transport pathway could be provided by the 3 s orbitals of Al cations to improve the electrical properties of the IGZO films, and the oxygen instability could be stabilized by the strong Al-O bonds in the IGZAO films. The electron concentration change and the electron mobility change of the IGZAO films for aging time of 10 days under an air environment at 40 °C and 75% humidity were 20.1% and 2.4%, respectively. The experimental results verified the performance stability of the IGZAO films. Compared with the thin film transistors (TFTs) using conventional IGZO channel layer, in conducting the stability of TFTs with IGZAO channel layer, the transconductance g m change, threshold voltage V T change, and the subthreshold swing S value change under the same aging condition were improved to 7.9%, 10.5%, and 14.8%, respectively. Furthermore, the stable performances of the IGZAO TFTs were also verified by the positive gate bias stress. In this research, the quinary IGZAO multicomponent oxide films and that applied in TFTs were the first studied in the literature

  4. High stability mechanisms of quinary indium gallium zinc aluminum oxide multicomponent oxide films and thin film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Ching-Ting, E-mail: ctlee@ee.ncku.edu.tw; Lin, Yung-Hao; Lin, Jhong-Ham [Institute of Microelectronics, Department of Electrical Engineering, Research Center for Energy Technology and Strategy (RCETS), National Cheng Kung University, Tainan, Taiwan (China)

    2015-01-28

    Quinary indium gallium zinc aluminum oxide (IGZAO) multicomponent oxide films were deposited using indium gallium zinc oxide (IGZO) target and Al target by radio frequency magnetron cosputtering system. An extra carrier transport pathway could be provided by the 3 s orbitals of Al cations to improve the electrical properties of the IGZO films, and the oxygen instability could be stabilized by the strong Al-O bonds in the IGZAO films. The electron concentration change and the electron mobility change of the IGZAO films for aging time of 10 days under an air environment at 40 °C and 75% humidity were 20.1% and 2.4%, respectively. The experimental results verified the performance stability of the IGZAO films. Compared with the thin film transistors (TFTs) using conventional IGZO channel layer, in conducting the stability of TFTs with IGZAO channel layer, the transconductance g{sub m} change, threshold voltage V{sub T} change, and the subthreshold swing S value change under the same aging condition were improved to 7.9%, 10.5%, and 14.8%, respectively. Furthermore, the stable performances of the IGZAO TFTs were also verified by the positive gate bias stress. In this research, the quinary IGZAO multicomponent oxide films and that applied in TFTs were the first studied in the literature.

  5. Nuclear microanalysis of oxide films on structural steel

    International Nuclear Information System (INIS)

    Istomin, I.V.; Karabash, V.A.; Maisyukov, V.D.; Sosnin, A.N.; Shorin, V.S.

    1989-01-01

    Studies of the behavior of structural materials in nuclear power plants have indicated the important role of oxide films on metals, especially metals of the iron group. The films may be formed as a result of the corrosion of the metal in an aggressive coolant. At the same time, some oxide films have anticorrosive properties and can be produced specially by the introduction of inhibitor-passivators, e.g., molecular oxygen, into the aggressive medium. Experimental data on the film growth rate make it possible to determine the kinetics of the oxidation process, the nature of the diffusion of the main components through the film, and the role of the phase transitions (crystal-chemical transformations) and point defects during the migration of oxygen and metal ions through the oxide. In this study nuclear microanalysis is used to measure the parameters of oxide films formed on 10Cr2Mo and 1Cr18Ni10Ti steels in steam in the temperature range 320-620C. In this method the film parameters in the general analysis of the energy spectra of deuterons back-scattered from iron nuclei and protons in the case of the 16 O(d,p 1 ) 17 O nuclear reaction. With this approach and an initial deuteron energy E o = 0.9 MeV the range of the measurable thickness t of the films is 0.001-1.5 mg/cm 2 . The data obtained not only confirm the high sensitivity of the nuclear microanalysis method but also demonstrate that it can be used for nondestructive quality control of the surface

  6. Improved Electrochemical Cycling Durability in a Nickel Oxide Double-Layered Film.

    Science.gov (United States)

    Hou, Shuai; Zhang, Xiang; Tian, Yanlong; Zhao, Jiupeng; Geng, Hongbin; Qu, Huiying; Zhang, Hangchuan; Zhang, Kun; Wang, Binsheng; Gavrilyuk, Alexander; Li, Yao

    2017-11-16

    For the first time, a crystalline-amorphous double-layered NiO x film has been prepared by reactive radio frequency magnetron sputtering. This film has exhibited improved electrochemical cycling durability, whereas other electrochromic parameters have been maintained at the required level, namely, a short coloration/bleaching time (0.8 s/1.1 s) and an enhanced transmittance modulation range (62.2 %) at λ=550 nm. Additionally, the double-layered film has shown better reversibility than that of amorphous and crystalline single-layered films. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. SPH based modelling of oxide and oxide film formation in gravity die castings

    International Nuclear Information System (INIS)

    Ellingsen, K; M'Hamdi, M; Coudert, T

    2015-01-01

    Gravity die casting is an important casting process which has the capability of making complicated, high-integrity components for e.g. the automotive industry. Oxides and oxide films formed during filling affect the cast product quality. The Smoothed particle hydrodynamics (SPH) method is particularly suited to follow complex flows. The SPH method has been used to study filling of a gravity die including the formation and transport of oxides and oxide films for two different filling velocities. A low inlet velocity leads to a higher amount of oxides and oxide films in the casting. The study demonstrates the usefulness of the SPH method for an increased understanding of the effect of different filling procedures on the cast quality. (paper)

  8. A novel Graphene Oxide film: Synthesis and Dielectric properties

    Science.gov (United States)

    Canimkurbey, Betul; San, Sait Eren; Yasin, Muhammad; Köse, Muhammet Erkan

    In this work, we used Hummers method to synthesize Graphene Oxide (GO) and its parallel plate impedance spectroscopic technique to investigate dielectric properties. Graphene Oxide films were coated using drop casting method on ITO substrate. To analyze film morphology, atomic force microscopy was used. Dielectrics measurements of the samples were performed using impedance analyzer (HP-4194) in frequency range (100 Hz to 10MHz) at different temperatures. It was observed that the films' AC conductivity σac varied with angular frequency, ω as ωS, with Sdirect current (DC) and Correlated Barrier Hopping (CBH) conductivity mechanisms at low and high frequency ranges, respectively. Using solution processed Graphene Oxide will provide potential for organic electronic applications through its photon absorption and transmittance capability in the visible range and excellent electrical parameters.

  9. Ion beam analysis of PECVD silicon oxide thin films

    International Nuclear Information System (INIS)

    Fernandez-Lima, F.; Rodriguez, J.A.; Pedrero, E.; Fonseca Filho, H.D.; Llovera, A.; Riera, M.; Dominguez, C.; Behar, M.; Zawislak, F.C.

    2006-01-01

    A study of ion beam analysis techniques of plasma enhanced chemical vapor deposited (PECVD) silicon oxide thin films (1 μm thick) obtained from silane (SiH 4 ) and nitrous oxide (N 2 O) is reported. The film, elemental composition and surface morphology were determined as function of the reactant gas flow ratio, R = [N 2 O]/[SiH 4 ] in the 22-110 range using the Rutherford backscattering spectrometry, nuclear reaction analysis and atomic force microscopy techniques. The density of the films was determined by combining the RBS and thickness measurements. All the experiments were done at a deposition temperature of 300 deg. C. In all the cases almost stoichiometric oxides were obtained being the impurity content function of R. It was also observed that physical properties such as density, surface roughness and shape factor increase with R in the studied interval

  10. Superlubricating graphene and graphene oxide films

    Science.gov (United States)

    Sumant, Anirudha V.; Erdemir, Ali; Choi, Junho; Berman, Diana

    2018-02-13

    A system and method for forming at least one of graphene and graphene oxide on a substrate and an opposed wear member. The system includes graphene and graphene oxide formed by an exfoliation process or solution processing method to dispose graphene and/or graphene oxide onto a substrate. The system further includes an opposing wear member disposed on another substrate and a gas atmosphere of an inert gas like N2, ambient, a humid atmosphere and a water solution.

  11. Nanostructured manganese oxide thin films as electrode material for supercapacitors

    Science.gov (United States)

    Xia, Hui; Lai, Man On; Lu, Li

    2011-01-01

    Electrochemical capacitors, also called supercapacitors, are alternative energy storage devices, particularly for applications requiring high power densities. Recently, manganese oxides have been extensively evaluated as electrode materials for supercapacitors due to their low cost, environmental benignity, and promising supercapacitive performance. In order to maximize the utilization of manganese oxides as the electrode material for the supercapacitors and improve their supercapacitive performance, the nanostructured manganese oxides have therefore been developed. This paper reviews the synthesis of the nanostructured manganese oxide thin films by different methods and the supercapacitive performance of different nanostructures.

  12. Properties of Spray Pyrolysied Copper Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    S. S. Roy

    2017-02-01

    Full Text Available Copper oxide (CuO thin films were deposited on well cleaned glass substrates by spray pyrolysis technique (SPT from cupric acetate (Cu(CH3COO2.H2O precursor solutions of 0.05 – 0.15 M molar concentrations (MC at a substrate temperature of 350 °C and at an air pressure of 1 bar. Effect of varying MC on the surface morphology, structural optical and electrical properties of CuO thin films were investigated. XRD patterns of the prepared films revealed the formation of CuO thin films having monoclinic structure with the main CuO (111 orientation and crystalline size ranging from 8.02 to 9.05 nm was observed. The optical transmission of the film was found to decrease with the increase of MC. The optical band gap of the thin films for 0.10 M was fond to be 1.60 eV. The room temperature electrical resistivity varies from 31 and 24 ohm.cm for the films grown with MC of 0.05 and 0.10 M respectively. The change in resistivity of the films was studied with respect to the change in temperature was shown that semiconductor nature is present. This information is expected to underlie the successful development of CuO films for solar windows and other semi-conductor applications including gas sensors.

  13. LaSrMnO{sub 3} thin films on YSZ/YSZ - NiO by the spin coating method: synthesis and microstructural characterization

    Energy Technology Data Exchange (ETDEWEB)

    Garcia, Laurenia Martins Pereira; Souza, Graziele Lopes de [Universidade Federal do Rio Grande do Norte (NUPEG/UFRN), Natal, RN (Brazil). Nucleo de Pesquisa em Petroleo e Gas], Email: lauengmat@hotmail.com; Macedo, Daniel Araujo de; Cela, Beatriz; Paskocimas, Carlos Alberto; Nascimento, Rubens Maribondo do [Universidade Federal do Rio Grande do Norte (PPGCEM/UFRN), Natal, RN (Brazil). Programa de Pos Graduacao em Ciencia e Engenharia de Materiais; Cesario, Moises Romolos [Universidade Federal do Rio Grande do Norte (PPGQ/UFRN), Natal, RN (Brazil). Programa de Pos Graduacao em Quimica

    2010-07-01

    Fuel cells are devices which work by electrochemical mechanism directly converting the chemical energy, by fuel the oxidizing, in electric energy. The Solid Oxide Fuel Cell - SOFC consist an anode, an electrolyte and one cathode made with ceramic materials. The most widely known functional materials used in SOFC are Yttria-stabilized zirconia electrolyte (YSZ), composite anode of YSZ-Ni O and strontium-doped lanthanum manganite cathode (La{sub 1-x}Sr{sub x}MnO{sub 3} - LGSM). In this work the thin films of cathode LSM were deposited by spin coating in a half cell YSZ/YSZ - Ni O. The polymeric resin of 22% strontium-doped lanthanum manganite (LSM 22) was attained by the polymeric precursor method. This resin was directly used for the deposition process. The deposition of 2 or 4 layers occurred by spin coating method with the following conditions: 500 rpm during 15 s and 300 rpm during 40 s. Each layer was thermally treated at 500 deg C for 2 h and heating rate equal to 1 deg C/min. The multi layers were sintered at 1000 deg C for 2 h, heating rate of 3 deg C/min and characterized by X-ray diffraction (XRD) and scanning electronic microscopy (SEM). The LSM 22 thin films presented microstructure with thin particles and thickness of 1 {mu}m. The surface cracks' quantity and size reduction tendency was observed with the increase of the layers deposition number. (author)

  14. CuOX thin films by direct oxidation of Cu films deposited by physical vapor deposition

    Directory of Open Access Journals (Sweden)

    D. Santos-Cruz

    Full Text Available Thin films of Cu2O and CuO oxides were developed by direct oxidation of physical vapor deposited copper films in an open atmosphere by varying the temperature in the range between 250 and 400 °C. In this work, the influence of oxidation temperature on structural, optical and electrical properties of copper oxide films has been discussed. The characterization results revealed that at lower temperatures (<300 °C, it is feasible to obtained coper (I oxide whereas at temperatures higher than 300 °C, the copper (II oxide is formed. The band gap is found to vary in between 1.54 and 2.21 eV depending on the oxidation temperature. Both oxides present p-type electrical conductivity. The carrier concentration has been increased as a function of the oxidation temperature from 1.61 × 1012 at 250 °C to 6.8 × 1012 cm−3 at 400 °C. The mobility has attained its maximum of 34.5 cm2 V−1 s−1 at a temperature of 300 °C, and a minimum of 13.8 cm2 V−1 s−1 for 400 °C. Finally, the resistivity of copper oxide films decreases as a function of oxidation temperature from 5.4 × 106 to 2.4 × 105 Ω-cm at 250 and 400 °C, respectively. Keywords: PVD, Oxidizing annealed treatment, Non-toxic material

  15. Preparation of molybdenum oxide thin films by MOCVD

    International Nuclear Information System (INIS)

    Guerrero, R. Martinez; Garcia, J.R. Vargas; Santes, V.; Gomez, E.

    2007-01-01

    In this study, molybdenum oxide films were prepared in a horizontal hot-wall MOCVD apparatus using molybdenum dioxide acetylacetonate as precursor. The molybdenum precursor was synthesized from acetylacetone and molybdenum oxide powder. Thermal gravimetric (TG) and differential thermal analyses (DTA) of the precursor suggested the formation of molybdenum oxides around 430 o C (703 K). Thus, a range of deposition temperatures varying from 350 to 630 o C (623-903 K) was explored to investigate the effects on the nature of the molybdenum oxide films. X-ray diffraction (XRD) results showed that the films consisted of α-MoO 3 phase at deposition temperatures ranging from 400 to 560 o C (673-833 K). Crystalline α-MoO 3 films can be obtained from molybdenum dioxide acetylacetonate precursor, without need of a post-annealing treatment. The best crystalline quality was found in films having needle-like crystallites grown at deposition temperature of about 560 o C (833 K), which exhibit a strong (0 1 0) preferred orientation and a transparent visual appearance

  16. Preparation of molybdenum oxide thin films by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Guerrero, R. Martinez [Depto. de Ingenieria Metalurgica, ESIQIE-IPN, Mexico 07300, D.F. (Mexico); Garcia, J.R. Vargas [Depto. de Ingenieria Metalurgica, ESIQIE-IPN, Mexico 07300, D.F. (Mexico)]. E-mail: rvargasga@ipn.mx; Santes, V. [CIIEMAD-IPN, Miguel Othon de Mendizabal 485, Mexico 07700, D.F. (Mexico); Gomez, E. [Instituto de Quimica-UNAM, Circuito Exterior-Ciudad Universitaria, Mexico 04510, D.F. (Mexico)

    2007-05-31

    In this study, molybdenum oxide films were prepared in a horizontal hot-wall MOCVD apparatus using molybdenum dioxide acetylacetonate as precursor. The molybdenum precursor was synthesized from acetylacetone and molybdenum oxide powder. Thermal gravimetric (TG) and differential thermal analyses (DTA) of the precursor suggested the formation of molybdenum oxides around 430 {sup o}C (703 K). Thus, a range of deposition temperatures varying from 350 to 630 {sup o}C (623-903 K) was explored to investigate the effects on the nature of the molybdenum oxide films. X-ray diffraction (XRD) results showed that the films consisted of {alpha}-MoO{sub 3} phase at deposition temperatures ranging from 400 to 560 {sup o}C (673-833 K). Crystalline {alpha}-MoO{sub 3} films can be obtained from molybdenum dioxide acetylacetonate precursor, without need of a post-annealing treatment. The best crystalline quality was found in films having needle-like crystallites grown at deposition temperature of about 560 {sup o}C (833 K), which exhibit a strong (0 1 0) preferred orientation and a transparent visual appearance.

  17. Spark counting technique with an aluminium oxide film

    International Nuclear Information System (INIS)

    Kawai, H.; Koga, T.; Morishima, H.; Niwa, T.; Nishiwaki, Y.

    1980-01-01

    Automatic spark counting of etch-pits on a polycarbonate film produced by nuclear fission fragments is now used for neutron monitoring in several countries. A method was developed using an aluminium oxide film instead of a polycarbonate as the neutron detector. Aluminium oxide films were prepared as follows: A cleaned aluminium plate as an anode and a nickel plate as a cathode were immersed in dilute sulfuric acid solution and electric current flowed between the electrodes at 12degC for 10-30 minutes. Electric current density was about 10 mA/cm 2 . The aluminium plate was then kept in boiling water for 10-30 minutes for sealing. The thickness of the aluminium oxide layer formed was about 1μm. The aluminium plate attached to a plate of suitable fissionable material, such as uranium or thorium, was irradiated with neutrons and set in a usual spark counter for fission track counting. One electrode was the aluminium plate and the other was an aluminized polyester sheet. Sparked pulses were counted with a usual scaler. The advantage of using spark counting with an aluminium oxide film for neutron monitoring is rapid measurement of neutron exposure, since chemical etching which is indispensable for spark counting with a polycarbonate detector film, is not needed. (H.K.)

  18. Valence control of cobalt oxide thin films by annealing atmosphere

    Energy Technology Data Exchange (ETDEWEB)

    Wang Shijing [School of Materials Science and Engineering, University of Science and Technology Beijing, No. 30 Xueyuan Road, Beijing 100083 (China); Zhang Boping, E-mail: bpzhang@ustb.edu.cn [School of Materials Science and Engineering, University of Science and Technology Beijing, No. 30 Xueyuan Road, Beijing 100083 (China); Zhao Cuihua; Li Songjie; Zhang Meixia; Yan Liping [School of Materials Science and Engineering, University of Science and Technology Beijing, No. 30 Xueyuan Road, Beijing 100083 (China)

    2011-02-01

    The cobalt oxide (CoO and Co{sub 3}O{sub 4}) thin films were successfully prepared using a spin-coating technique by a chemical solution method with CH{sub 3}OCH{sub 2}CH{sub 2}OH and Co(NO{sub 3}){sub 2}.6H{sub 2}O as starting materials. The grayish cobalt oxide films had uniform crystalline grains with less than 50 nm in diameter. The phase structure is able to tailor by controlling the annealing atmosphere and temperature, in which Co{sub 3}O{sub 4} thin film was obtained by annealing in air at 300-600, and N{sub 2} at 300, and transferred to CoO thin film by raising annealing temperature in N{sub 2}. The fitted X-ray photoelectron spectroscopy (XPS) spectra of the Co2p electrons are distinguishable from different valence states of cobalt oxide especially for their satellite structure. The valence control of cobalt oxide thin films by annealing atmosphere contributes to the tailored optical absorption property.

  19. Comparison of topotactic fluorination methods for complex oxide films

    Science.gov (United States)

    Moon, E. J.; Choquette, A. K.; Huon, A.; Kulesa, S. Z.; Barbash, D.; May, S. J.

    2015-06-01

    We have investigated the synthesis of SrFeO3-αFγ (α and γ ≤ 1) perovskite films using topotactic fluorination reactions utilizing poly(vinylidene fluoride) as a fluorine source. Two different fluorination methods, a spin-coating and a vapor transport approach, were performed on as-grown SrFeO2.5 films. We highlight differences in the structural, compositional, and optical properties of the oxyfluoride films obtained via the two methods, providing insight into how fluorination reactions can be used to modify electronic and optical behavior in complex oxide heterostructures.

  20. Comparison of topotactic fluorination methods for complex oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Moon, E. J., E-mail: em582@drexel.edu; Choquette, A. K.; Huon, A.; Kulesa, S. Z.; May, S. J., E-mail: smay@coe.drexel.edu [Department of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104 (United States); Barbash, D. [Centralized Research Facilities, Drexel University, Philadelphia, Pennsylvania 19104 (United States)

    2015-06-01

    We have investigated the synthesis of SrFeO{sub 3−α}F{sub γ} (α and γ ≤ 1) perovskite films using topotactic fluorination reactions utilizing poly(vinylidene fluoride) as a fluorine source. Two different fluorination methods, a spin-coating and a vapor transport approach, were performed on as-grown SrFeO{sub 2.5} films. We highlight differences in the structural, compositional, and optical properties of the oxyfluoride films obtained via the two methods, providing insight into how fluorination reactions can be used to modify electronic and optical behavior in complex oxide heterostructures.

  1. Rf reactive sputtering of indium-tin-oxide films

    International Nuclear Information System (INIS)

    Tvarozek, V.; Novotny, I.; Harman, R.; Kovac, J.

    1986-01-01

    Films of indium-tin-oxide (ITO) have been deposited by rf reactive diode sputtering of metallic InSn alloy targets, or ceramic ITO targets, in an Ar and Ar+0 2 atmosphere. Electrical as well as optical properties of ITO films were controlled by varying sputtering parameters and by post-deposition heat-treatment in Ar, H 2 , N 2 , H 2 +N 2 ambients. The ITO films exhibited low resistivity approx. 2 x 10 -4 Ω cm, high transmittance approx. 90% in the visible spectral region and high reflectance approx. 80% in the near infra-red region. (author)

  2. Morphology selection for cupric oxide thin films by electrodeposition.

    Science.gov (United States)

    Dhanasekaran, V; Mahalingam, T; Chandramohan, R

    2011-10-01

    Polycrystalline cupric oxide thin films were deposited using alkaline solution bath employing cathodic electrodeposition method. The thin films were electrodeposited at various solution pH. The surface morphology and elemental analyzes of the films were studied using scanning electron microscopy (SEM) and energy dispersive X-ray analysis, respectively. SEM studies revealed that the surface morphology could be tailored suitably by adjusting the pH value during deposition. Mesh average on multiple lattice mode atomic force microscopy image was obtained and reported. Copyright © 2011 Wiley-Liss, Inc.

  3. Comparison of topotactic fluorination methods for complex oxide films

    Directory of Open Access Journals (Sweden)

    E. J. Moon

    2015-06-01

    Full Text Available We have investigated the synthesis of SrFeO3−αFγ (α and γ ≤ 1 perovskite films using topotactic fluorination reactions utilizing poly(vinylidene fluoride as a fluorine source. Two different fluorination methods, a spin-coating and a vapor transport approach, were performed on as-grown SrFeO2.5 films. We highlight differences in the structural, compositional, and optical properties of the oxyfluoride films obtained via the two methods, providing insight into how fluorination reactions can be used to modify electronic and optical behavior in complex oxide heterostructures.

  4. Surface and sub-surface thermal oxidation of thin ruthenium films

    Energy Technology Data Exchange (ETDEWEB)

    Coloma Ribera, R.; Kruijs, R. W. E. van de; Yakshin, A. E.; Bijkerk, F. [MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands); Kokke, S.; Zoethout, E. [FOM Dutch Institute for Fundamental Energy Research (DIFFER), P.O. Box 1207, 3430 BE Nieuwegein (Netherlands)

    2014-09-29

    A mixed 2D (film) and 3D (nano-column) growth of ruthenium oxide has been experimentally observed for thermally oxidized polycrystalline ruthenium thin films. Furthermore, in situ x-ray reflectivity upon annealing allowed the detection of 2D film growth as two separate layers consisting of low density and high density oxides. Nano-columns grow at the surface of the low density oxide layer, with the growth rate being limited by diffusion of ruthenium through the formed oxide film. Simultaneously, with the growth of the columns, sub-surface high density oxide continues to grow limited by diffusion of oxygen or ruthenium through the oxide film.

  5. Effects of Thermal Annealing Conditions on Cupric Oxide Thin Film

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hyo Seon; Oh, Hee-bong; Ryu, Hyukhyun [Inje University, Gimhae (Korea, Republic of); Lee, Won-Jae [Dong-Eui University, Busan (Korea, Republic of)

    2015-07-15

    In this study, cupric oxide (CuO) thin films were grown on fluorine doped tin oxide(FTO) substrate by using spin coating method. We investigated the effects of thermal annealing temperature and thermal annealing duration on the morphological, structural, optical and photoelectrochemical properties of the CuO film. From the results, we could find that the morphologies, grain sizes, crystallinity and photoelectrochemical properties were dependent on the annealing conditions. As a result, the maximum photocurrent density of -1.47 mA/cm{sup 2} (vs. SCE) was obtained from the sample with the thermal annealing conditions of 500 ℃ and 40 min.

  6. Oxygen partial pressure effects on the RF sputtered p-type NiO hydrogen gas sensors

    Science.gov (United States)

    Turgut, Erdal; Çoban, Ömer; Sarıtaş, Sevda; Tüzemen, Sebahattin; Yıldırım, Muhammet; Gür, Emre

    2018-03-01

    NiO thin films were grown by Radio Frequency (RF) Magnetron Sputtering method under different oxygen partial pressures, which are 0.6 mTorr, 1.3 mTorr and 2.0 mTorr. The effects of oxygen partial pressures on the thin films were analyzed through Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), X-ray Diffraction (XRD), X-ray Photoelectron Spectroscopy (XPS) and Hall measurements. The change in the surface morphology of the thin films has been observed with the SEM and AFM measurements. While nano-pyramids have been obtained on the thin film grown at the lowest oxygen partial pressure, the spherical granules lower than 60 nm in size has been observed for the samples grown at higher oxygen partial pressures. The shift in the dominant XRD peak is realized to the lower two theta angle with increasing the oxygen partial pressures. XPS measurements showed that the Ni2p peak involves satellite peaks and two oxidation states of Ni, Ni2+ and Ni3+, have been existed together with the corresponding splitting in O1s spectrum. P-type conductivity of the grown NiO thin films are confirmed by the Hall measurements with concentrations on the order of 1013 holes/cm-3. Gas sensor measurements revealed minimum of 10% response to the 10 ppm H2 level. Enhanced responsivity of the gas sensor devices of NiO thin films is shown as the oxygen partial pressure increases.

  7. Bismuth iron oxide thin films using atomic layer deposition of alternating bismuth oxide and iron oxide layers

    Energy Technology Data Exchange (ETDEWEB)

    Puttaswamy, Manjunath; Vehkamäki, Marko [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); Kukli, Kaupo, E-mail: kaupo.kukli@helsinki.fi [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); University of Tartu, Institute of Physics, W. Ostwald 1, EE-50411 Tartu (Estonia); Dimri, Mukesh Chandra [National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, EE-12618 Tallinn (Estonia); Kemell, Marianna; Hatanpää, Timo; Heikkilä, Mikko J. [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); Mizohata, Kenichiro [University of Helsinki, Department of Physics, P.O. Box 64, FI-00014 Helsinki (Finland); Stern, Raivo [National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, EE-12618 Tallinn (Estonia); Ritala, Mikko; Leskelä, Markku [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland)

    2016-07-29

    Bismuth iron oxide films with varying contributions from Fe{sub 2}O{sub 3} or Bi{sub 2}O{sub 3} were prepared using atomic layer deposition. Bismuth (III) 2,3-dimethyl-2-butoxide, was used as the bismuth source, iron(III) tert-butoxide as the iron source and water vapor as the oxygen source. The films were deposited as stacks of alternate Bi{sub 2}O{sub 3} and Fe{sub 2}O{sub 3} layers. Films grown at 140 °C to the thickness of 200–220 nm were amorphous, but crystallized upon post-deposition annealing at 500 °C in nitrogen. Annealing of films with intermittent bismuth and iron oxide layers grown to different thicknesses influenced their surface morphology, crystal structure, composition, electrical and magnetic properties. Implications of multiferroic performance were recognized in the films with the remanent charge polarization varying from 1 to 5 μC/cm{sup 2} and magnetic coercivity varying from a few up to 8000 A/m. - Highlights: • Bismuth iron oxide thin films were grown by atomic layer deposition at 140 °C. • The major phase formed in the films upon annealing at 500 °C was BiFeO{sub 3}. • BiFeO{sub 3} films and films containing excess Bi favored electrical charge polarization. • Slight excess of iron oxide enhanced saturative magnetization behavior.

  8. Tungsten oxide proton conducting films for low-voltage transparent oxide-based thin-film transistors

    International Nuclear Information System (INIS)

    Zhang, Hongliang; Wan, Qing; Wan, Changjin; Wu, Guodong; Zhu, Liqiang

    2013-01-01

    Tungsten oxide (WO x ) electrolyte films deposited by reactive magnetron sputtering showed a high room temperature proton conductivity of 1.38 × 10 −4 S/cm with a relative humidity of 60%. Low-voltage transparent W-doped indium-zinc-oxide thin-film transistors gated by WO x -based electrolytes were self-assembled on glass substrates by one mask diffraction method. Enhancement mode operation with a large current on/off ratio of 4.7 × 10 6 , a low subthreshold swing of 108 mV/decade, and a high field-effect mobility 42.6 cm 2 /V s was realized. Our results demonstrated that WO x -based proton conducting films were promising gate dielectric candidates for portable low-voltage oxide-based devices.

  9. Interface and oxide traps in high-κ hafnium oxide films

    International Nuclear Information System (INIS)

    Wong, H.; Zhan, N.; Ng, K.L.; Poon, M.C.; Kok, C.W.

    2004-01-01

    The origins of the interface trap generation and the effects of thermal annealing on the interface and bulk trap distributions are studied in detail. We found that oxidation of the HfO 2 /Si interface, removal of deep trap centers, and crystallization of the as-deposited film will take place during the post-deposition annealing (PDA). These processes will result in the removal of interface traps and deep oxide traps and introduce a large amount of shallow oxide traps at the grain boundaries of the polycrystalline film. Thus, trade-off has to be made in considering the interface trap density and oxide trap density when conducting PDA. In addition, the high interface trap and oxide trap densities of the HfO 2 films suggest that we may have to use the SiO 2 /HfO 2 stack or hafnium silicate structure for better device performance

  10. Monodispersed macroporous architecture of nickel-oxide film as an anode material for thin-film lithium-ion batteries

    International Nuclear Information System (INIS)

    Wu, Mao-Sung; Lin, Ya-Ping

    2011-01-01

    A nickel-oxide film with monodispersed open macropores was prepared on a stainless-steel substrate by electrophoretic deposition of a polystyrene-sphere monolayer followed by anodic electrodeposition of nickel oxy-hydroxide. The deposited films convert to cubic nickel oxide after annealing at 400 o C for 1 h. Galvanostatic charge and discharge results indicate that the nickel-oxide film with monodispersed open macropores is capable of delivering a higher capacity than the bare nickel-oxide film, especially in high-rate charge and discharge processes. The lithiation capacity of macroporous nickel oxide reaches 1620 mA h g -1 at 1 C current discharge and decreases to 990 mA h g -1 at 15 C current discharge. The presence of monodispersed open macropores in the nickel-oxide film might facilitate the electrolyte penetration, diffusion, and migration. Electrochemical reactions between nickel oxide and lithium ions are therefore markedly improved by this tailored film architecture.

  11. Ion beam-based characterization of multicomponent oxide thin films and thin film layered structures

    International Nuclear Information System (INIS)

    Krauss, A.R.; Rangaswamy, M.; Lin, Yuping; Gruen, D.M.; Schultz, J.A.; Schmidt, H.K.; Chang, R.P.H.

    1992-01-01

    Fabrication of thin film layered structures of multi-component materials such as high temperature superconductors, ferroelectric and electro-optic materials, and alloy semiconductors, and the development of hybrid materials requires understanding of film growth and interface properties. For High Temperature Superconductors, the superconducting coherence length is extremely short (5--15 Angstrom), and fabrication of reliable devices will require control of film properties at extremely sharp interfaces; it will be necessary to verify the integrity of thin layers and layered structure devices over thicknesses comparable to the atomic layer spacing. Analytical techniques which probe the first 1--2 atomic layers are therefore necessary for in-situ characterization of relevant thin film growth processes. However, most surface-analytical techniques are sensitive to a region within 10--40 Angstrom of the surface and are physically incompatible with thin film deposition and are typically restricted to ultra high vacuum conditions. A review of ion beam-based analytical methods for the characterization of thin film and multi-layered thin film structures incorporating layers of multicomponent oxides is presented. Particular attention will be paid to the use of time-of-flight techniques based on the use of 1- 15 key ion beams which show potential for use as nondestructive, real-time, in-situ surface diagnostics for the growth of multicomponent metal and metal oxide thin films

  12. Remote plasma-enhanced metalorganic chemical vapor deposition of aluminum oxide thin films

    NARCIS (Netherlands)

    Volintiru, I.; Creatore, M.; Hemmen, van J.L.; Sanden, van de M.C.M.

    2008-01-01

    Aluminum oxide films were deposited using remote plasma-enhanced metalorganic chemical vapor deposition from oxygen/trimethylaluminum mixtures. Initial studies by in situ spectroscopic ellipsometry demonstrated that the aluminum oxide films deposited at temperatures

  13. Structural and optical properties of electrodeposited molybdenum oxide thin films

    International Nuclear Information System (INIS)

    Patil, R.S.; Uplane, M.D.; Patil, P.S.

    2006-01-01

    Electrosynthesis of Mo(IV) oxide thin films on F-doped SnO 2 conducting glass (10-20/Ω/□) substrates were carried from aqueous alkaline solution of ammonium molybdate at room temperature. The physical characterization of as-deposited films carried by thermogravimetric/differential thermogravimetric analysis (TGA/DTA), infrared spectroscopy and X-ray diffraction (XRD) showed the formation of hydrous and amorphous MoO 2 . Scanning electron microscopy (SEM) revealed a smooth but cracked surface with multi-layered growth. Annealing of these films in dry argon at 450 deg. C for 1 h resulted into polycrystalline MoO 2 with crystallites aligned perpendicular to the substrate. Optical absorption study indicated a direct band gap of 2.83 eV. The band gap variation consistent with Moss rule and band gap narrowing upon crystallization was observed. Structure tailoring of as-deposited thin films by thermal oxidation in ambient air to obtain electrochromic Mo(VI) oxide thin films was exploited for the first time by this novel route. The results of this study will be reported elsewhere

  14. Electro-mechanical coupling of semiconductor film grown on stainless steel by oxidation

    Science.gov (United States)

    Lin, M. C.; Wang, G.; Guo, L. Q.; Qiao, L. J.; Volinsky, Alex A.

    2013-09-01

    Electro-mechanical coupling phenomenon in oxidation film on stainless steel has been discovered by using current-sensing atomic force microscopy, along with the I-V curves measurements. The oxidation films exhibit either ohmic, n-type, or p-type semiconductor properties, according to the obtained I-V curves. This technique allows characterizing oxidation films with high spatial resolution. Semiconductor properties of oxidation films must be considered as additional stress corrosion cracking mechanisms.

  15. Optical characterisation of thin film cadmium oxide prepared by a ...

    African Journals Online (AJOL)

    The optical transmission spectra of transparent conducting cadmium oxide (CdO) thin films deposited by a modified reactive evaporation process onto glass substrates have been measured. The interference fringes were used to calculate the refractive index, thickness variation, average thickness and absorption coefficient ...

  16. solution growth and characterization of copper oxide thin films ...

    African Journals Online (AJOL)

    Thin films of copper oxide (CuO) were grown on glass slides by using the solution growth technique. Copper cloride (CuCl ) and potassium telluride (K T O ) were used. Buffer 2 2e 3 solution was used as complexing agent. The solid state properties and optical properties were obtained from characterization done using PYE ...

  17. Nanoscale reduction of graphene oxide thin films and its characterization

    KAUST Repository

    Lorenzoni, M.; Giugni, Andrea; Di Fabrizio, Enzo M.; Pé rez-Murano, Francesc; Mescola, A.; Torre, Bruno

    2015-01-01

    In this paper, we report on a method to reduce thin films of graphene oxide (GO) to a spatial resolution better than 100 nm over several tens of micrometers by means of an electrochemical scanning probe based lithography. In situ tip

  18. Transparent conductive oxides for thin-film silicon solar cells

    NARCIS (Netherlands)

    Löffler, J.

    2005-01-01

    This thesis describes research on thin-film silicon solar cells with focus on the transparent conductive oxide (TCO) for such devices. In addition to the formation of a transparent and electrically conductive front electrode for the solar cell allowing photocurrent collection with low ohmic losses,

  19. Multiferroic oxide thin films and heterostructures

    KAUST Repository

    Lu, Chengliang

    2015-05-26

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  20. Effect of thermal annealing of lead oxide film

    International Nuclear Information System (INIS)

    Hwang, Oh Hyeon; Kim, Sang Su; Suh, Jong Hee; Cho, Shin Hang; Kim, Ki Hyun; Hong, Jin Ki; Kim, Sun Ung

    2011-01-01

    Oxygen partial pressure in a growth process of lead oxide determines chemical and physical properties as well as crystalline structure. In order to supply oxygen, two ring-shape suppliers have been installed in a growth chamber. Films have been deposited using vacuum thermal evaporation from a raw material of yellow lead oxide powder (5N). Growth rate is controlled to be about 400 A/s, and film thickness more than 50 μm has been achieved. After deposition, the film is annealed at various temperatures under an oxygen atmosphere. In this study, an optimum growth condition for a good X-ray detector has been achieved by fine control of oxygen flow-rate and by thermal treatment. An electrical resistivity of 4.5x10 12 Ω cm is measured, and is comparable with the best data of PbO.

  1. High mobility transparent conducting oxides for thin film solar cells

    International Nuclear Information System (INIS)

    Calnan, S.; Tiwari, A.N.

    2010-01-01

    A special class of transparent conducting oxides (TCO) with high mobility of > 65 cm 2 V -1 s -1 allows film resistivity in the low 10 -4 Ω cm range and a high transparency of > 80% over a wide spectrum, from 300 nm to beyond 1500 nm. This exceptional coincidence of desirable optical and electrical properties provides opportunities to improve the performance of opto-electronic devices and opens possibilities for new applications. Strategies to attain high mobility (HM) TCO materials as well as the current status of such materials based on indium and cadmium containing oxides are presented. Various concepts used to understand the underlying mechanisms for high mobility in HMTCO films are discussed. Examples of HMTCO layers used as transparent electrodes in thin film solar cells are used to illustrate possible improvements in solar cell performance. Finally, challenges and prospects for further development of HMTCO materials are discussed.

  2. Atomic layer deposition of calcium oxide and calcium hafnium oxide films using calcium cyclopentadienyl precursor

    International Nuclear Information System (INIS)

    Kukli, Kaupo; Ritala, Mikko; Sajavaara, Timo; Haenninen, Timo; Leskelae, Markku

    2006-01-01

    Calcium oxide and calcium hafnium oxide thin films were grown by atomic layer deposition on borosilicate glass and silicon substrates in the temperature range of 205-300 o C. The calcium oxide films were grown from novel calcium cyclopentadienyl precursor and water. Calcium oxide films possessed refractive index 1.75-1.80. Calcium oxide films grown without Al 2 O 3 capping layer occurred hygroscopic and converted to Ca(OH) 2 after exposure to air. As-deposited CaO films were (200)-oriented. CaO covered with Al 2 O 3 capping layers contained relatively low amounts of hydrogen and re-oriented into (111) direction upon annealing at 900 o C. In order to examine the application of CaO in high-permittivity dielectric layers, mixtures of Ca and Hf oxides were grown by alternate CaO and HfO 2 growth cycles at 230 and 300 o C. HfCl 4 was used as a hafnium precursor. When grown at 230 o C, the films were amorphous with equal amounts of Ca and Hf constituents (15 at.%). These films crystallized upon annealing at 750 o C, showing X-ray diffraction peaks characteristic of hafnium-rich phases such as Ca 2 Hf 7 O 16 or Ca 6 Hf 19 O 44 . At 300 o C, the relative Ca content remained below 8 at.%. The crystallized phase well matched with rhombohedral Ca 2 Hf 7 O 16 . The dielectric films grown on Si(100) substrates possessed effective permittivity values in the range of 12.8-14.2

  3. Perovskite Oxide Thin Film Growth, Characterization, and Stability

    Science.gov (United States)

    Izumi, Andrew

    Studies into a class of materials known as complex oxides have evoked a great deal of interest due to their unique magnetic, ferroelectric, and superconducting properties. In particular, materials with the ABO3 perovskite structure have highly tunable properties because of the high stability of the structure, which allows for large scale doping and strain. This also allows for a large selection of A and B cations and valences, which can further modify the material's electronic structure. Additionally, deposition of these materials as thin films and superlattices through techniques such as pulsed laser deposition (PLD) results in novel properties due to the reduced dimensionality of the material. The novel properties of perovskite oxide heterostructures can be traced to a several sources, including chemical intermixing, strain and defect formation, and electronic reconstruction. The correlations between microstructure and physical properties must be investigated by examining the physical and electronic structure of perovskites in order to understand this class of materials. Some perovskites can undergo phase changes due to temperature, electrical fields, and magnetic fields. In this work we investigated Nd0.5Sr 0.5MnO3 (NSMO), which undergoes a first order magnetic and electronic transition at T=158K in bulk form. Above this temperature NSMO is a ferromagnetic metal, but transitions into an antiferromagnetic insulator as the temperature is decreased. This rapid transition has interesting potential in memory devices. However, when NSMO is deposited on (001)-oriented SrTiO 3 (STO) or (001)-oriented (LaAlO3)0.3-(Sr 2AlTaO6)0.7 (LSAT) substrates, this transition is lost. It has been reported in the literature that depositing NSMO on (110)-oriented STO allows for the transition to reemerge due to the partial epitaxial growth, where the NSMO film is strained along the [001] surface axis and partially relaxed along the [11¯0] surface axis. This allows the NSMO film enough

  4. Optimum deposition, structure, and properties of tantalum oxide films

    International Nuclear Information System (INIS)

    Lin, Y.C.

    1985-01-01

    Amorphous, ductile, and uniform Ta 2 O 5 films that acted as diffusion barriers were developed by sputter depositing Ta metal on Al single crystals (99.99%) and subsequently anodizing these thin films. The morphology, microstructure, composition and properties were characterized by scanning and transmission electron microscopy, surface and Fourier transform infrared spectroscopy, X-ray diffraction, and fluorescence. Superior corrosion resistance in a water saturated Cl 2 atmosphere was provided by Ta 2 O 5 coating on Al single crystal substrates but not on Al alloys. The strong Ta-O bond, the non-porous nature of the film and good adhesion to the substrate are attributed to the outstanding corrosion resistance of these oxide coatings. Al alloy surfaces are not protected, since the anodic film formed over grain boundaries, processing lines and emergent precipitates is poorly adherent, thus providing loci for corrosion. These problems were eliminated by casting a 400 A layer of tantalum oxyhydroxide polymer from ethanol solution onto Al substrate and curing to a Ta 2 O 5 layer that effectively resisted attack by wet Cl 2 . The mechanical properties of Ta 2 O 5 films on Al alloys were studied at various pH's by in-situ fatigue loading coupled with electrochemical measurements of corrosion potential and corrosion current. These results indicate the fatigue resistance of this oxide film effectively protects the underlying metal from strong HCl solution attack. The very unusual ductility and high corrosion resistance of Ta 2 O 5 films could be related to the graphite-like structure that exists in the amorphous state of this oxide

  5. Indium oxide inverse opal films synthesized by structure replication method

    Science.gov (United States)

    Amrehn, Sabrina; Berghoff, Daniel; Nikitin, Andreas; Reichelt, Matthias; Wu, Xia; Meier, Torsten; Wagner, Thorsten

    2016-04-01

    We present the synthesis of indium oxide (In2O3) inverse opal films with photonic stop bands in the visible range by a structure replication method. Artificial opal films made of poly(methyl methacrylate) (PMMA) spheres are utilized as template. The opal films are deposited via sedimentation facilitated by ultrasonication, and then impregnated by indium nitrate solution, which is thermally converted to In2O3 after drying. The quality of the resulting inverse opal film depends on many parameters; in this study the water content of the indium nitrate/PMMA composite after drying is investigated. Comparison of the reflectance spectra recorded by vis-spectroscopy with simulated data shows a good agreement between the peak position and calculated stop band positions for the inverse opals. This synthesis is less complex and highly efficient compared to most other techniques and is suitable for use in many applications.

  6. Ferroelectric thin films using oxides as raw materials

    Directory of Open Access Journals (Sweden)

    E.B. Araújo

    1999-01-01

    Full Text Available This work describes an alternative method for the preparation of ferroelectric thin films based on pre-calcination of oxides, to be used as precursor material for a solution preparation. In order to show the viability of the proposed method, PbZr0.53Ti0.47O3 and Bi4Ti3O12 thin films were prepared on fused quartz and Si substrates. The results were analyzed by X-ray Diffraction (XRD, Scanning Electron Microscopy (SEM, Infrared Spectroscopy (IR and Rutherford Backscattering Spectroscopy (RBS. The films obtained show good quality, homogeneity and the desired stoichiometry. The estimated thickness for one layer deposition was approximately 1000 Å and 1500 Å for Bi4Ti3O12 and PbZr0.53Ti0.47O3 films, respectively.

  7. Structural transformation of nickel hydroxide films during anodic oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Crocker, Robert W. [Univ. of California, Berkeley, CA (United States); Muller, Rolf H. [Univ. of California, Berkeley, CA (United States)

    1992-05-01

    The transformation of anodically formed nickel hydroxide/oxy-hydroxide electrodes has been investigated. A mechanism is proposed for the anodic oxidation reaction, in which the reaction interface between the reduced and oxidized phases of the electrode evolves in a nodular topography that leads to inefficient utilization of the active electrode material. In the proposed nodular transformation model for the anodic oxidation reaction, nickel hydroxide is oxidized to nickel oxy-hydroxide in the region near the metal substrate. Since the nickel oxy-hydroxide is considerably more conductive than the surrounding nickel hydroxide, as further oxidation occurs, nodular features grow rapidly to the film/electrolyte interface. Upon emerging at the electrolyte interface, the reaction boundary between the nickel hydroxide and oxy-hydroxide phases spreads laterally across the film/electrolyte interface, creating an overlayer of nickel oxy-hydroxide and trapping uncharged regions of nickel hydroxide within the film. The nickel oxy-hydroxide overlayer surface facilitates the oxygen evolution side reaction. Scanning tunneling microscopy of the electrode in its charged state revealed evidence of 80 - 100 Angstrom nickel oxy-hydroxide nodules in the nickel hydroxide film. In situ spectroscopic ellipsometer measurements of films held at various constant potentials agree quantitatively with optical models appropriate to the nodular growth and subsequent overgrowth of the nickel oxy-hydroxide phase. A two-dimensional, numerical finite difference model was developed to simulate the current distribution along the phase boundary between the charged and uncharged material. The model was used to explore the effects of the physical parameters that govern the electrode behavior. The ratio of the conductivities of the nickel hydroxide and oxy-hydroxide phases was found to be the dominant parameter in the system.

  8. Structural transformation of nickel hydroxide films during anodic oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Crocker, R.W.; Muller, R.H.

    1992-05-01

    The transformation of anodically formed nickel hydroxide/oxy-hydroxide electrodes has been investigated. A mechanism is proposed for the anodic oxidation reaction, in which the reaction interface between the reduced and oxidized phases of the electrode evolves in a nodular topography that leads to inefficient utilization of the active electrode material. In the proposed nodular transformation model for the anodic oxidation reaction, nickel hydroxide is oxidized to nickel oxy-hydroxide in the region near the metal substrate. Since the nickel oxy-hydroxide is considerably more conductive than the surrounding nickel hydroxide, as further oxidation occurs, nodular features grow rapidly to the film/electrolyte interface. Upon emerging at the electrolyte interface, the reaction boundary between the nickel hydroxide and oxy-hydroxide phases spreads laterally across the film/electrolyte interface, creating an overlayer of nickel oxy-hydroxide and trapping uncharged regions of nickel hydroxide within the film. The nickel oxy-hydroxide overlayer surface facilitates the oxygen evolution side reaction. Scanning tunneling microscopy of the electrode in its charged state revealed evidence of 80 {endash} 100 Angstrom nickel oxy-hydroxide nodules in the nickel hydroxide film. In situ spectroscopic ellipsometer measurements of films held at various constant potentials agree quantitatively with optical models appropriate to the nodular growth and subsequent overgrowth of the nickel oxy-hydroxide phase. A two-dimensional, numerical finite difference model was developed to simulate the current distribution along the phase boundary between the charged and uncharged material. The model was used to explore the effects of the physical parameters that govern the electrode behavior. The ratio of the conductivities of the nickel hydroxide and oxy-hydroxide phases was found to be the dominant parameter in the system.

  9. Tantalum oxide thin films as protective coatings for sensors

    DEFF Research Database (Denmark)

    Christensen, Carsten; Reus, Roger De; Bouwstra, Siebe

    1999-01-01

    Reactively sputtered tantalum oxide thin films have been investigated as protective coatings for aggressive media exposed sensors. Tantalum oxide is shown to be chemically very robust. The etch rate in aqueous potassium hydroxide with pH 11 at 140°C is lower than 0.008 Å h-l. Etching in liquids...... with pH values in the range from pH 2 to 11 have generally given etch rates below 0.04 Å h-l. On the other hand patterning is possible in hydrofluoric acid. Further, the passivation behaviour of amorphous tantalum oxide and polycrystalline Ta2O5 is different in buffered hydrofluoric acid. By ex situ...... annealing O2 in the residual thin-film stress can be altered from compressive to tensile and annealing at 450°C for 30 minutes gives a stress-free film. The step coverage of the sputter deposited amorphous tantalum oxide is reasonable, but metallization lines are hard to cover. Sputtered tantalum oxide...

  10. Tantalum oxide thin films as protective coatings for sensors

    DEFF Research Database (Denmark)

    Christensen, Carsten; Reus, Roger De; Bouwstra, Siebe

    1999-01-01

    Reactively sputtered tantalum oxide thin-films have been investigated as protective coating for aggressive media exposed sensors. Tantalum oxide is shown to be chemically very robust. The etch rate in aqueous potassium hydroxide with pH 11 at 140°C is lower than 0.008 Å/h. Etching in liquids with p......H values in the range from pH 2-11 have generally given etch rates below 0.04 Å/h. On the other hand patterning is possible in hydrofluoric acid. Further, the passivation behaviour of amorphous tantalum oxide and polycrystalline Ta2O5 is different in buffered hydrofluoric acid. By ex-situ annealing in O2...... the residual thin-film stress can be altered from compressive to tensile and annealing at 450°C for 30 minutes gives a stress-free film. The step coverage of the sputter deposited amorphous tantalum oxide is reasonable, but metallisation lines are hard to cover. Sputtered tantalum oxide exhibits high...

  11. Albumin adsorption on oxide thin films studied by spectroscopic ellipsometry

    Energy Technology Data Exchange (ETDEWEB)

    Silva-Bermudez, P., E-mail: suriel21@yahoo.com [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito Exterior s/n, C.U., 04510, Mexico D.F. (Mexico); Unidad de Posgrado, Facultad de Odontologia, Universidad Nacional Autonoma de Mexico, CU, 04510, Mexico D.F. (Mexico); Rodil, S.E.; Muhl, S. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito Exterior s/n, C.U., 04510, Mexico D.F. (Mexico)

    2011-12-15

    Thin films of tantalum, niobium, zirconium and titanium oxides were deposited by reactive magnetron sputtering and their wettability and surface energy, optical properties, roughness, chemical composition and microstructure were characterized using contact angle measurements, spectroscopic ellipsometry, profilometry, X-ray photoelectron spectroscopy and X-ray diffraction, respectively. The purpose of the work was to correlate the surface properties of the films to the Bovine Serum Albumin (BSA) adsorption, as a first step into the development of an initial in vitro test of the films biocompatibility, based on standardized protein adsorption essays. The films were immersed into BSA solutions with different protein concentrations and protein adsorption was monitored in situ by dynamic ellipsometry; the adsorption-rate was dependent on the solution concentration and the immersion time. The overall BSA adsorption was studied in situ using spectroscopic ellipsometry and it was found to be influenced by the wettability of the films; larger BSA adsorption occurred on the more hydrophobic surface, the ZrO{sub 2} film. On the Ta{sub 2}O{sub 5}, Nb{sub 2}O{sub 5} and TiO{sub 2} films, hydrophilic surfaces, the overall BSA adsorption increased with the surface roughness or the polar component of the surface energy.

  12. The influence of Ac parameters in the process of micro-arc oxidation film electric breakdown

    Directory of Open Access Journals (Sweden)

    Ma Jin

    2016-01-01

    Full Text Available This paper studies the electric breakdown discharge process of micro-arc oxidation film on the surface of aluminum alloy. Based on the analysis of the AC parameters variation in the micro-arc oxidation process, the following conclusions can be drawn: The growth of oxide film can be divided into three stages, and Oxide film breakdown discharge occurs twice in the micro-arc oxidation process. The first stage is the formation and disruptive discharge of amorphous oxide film, producing the ceramic oxide granules, which belong to solid dielectric breakdown. In this stage the membrane voltage of the oxide film plays a key role; the second stage is the formation of ceramic oxide film, the ceramic oxide granules turns into porous structure oxide film in this stage; the third stage is the growth of ceramic oxide film, the gas film that forms in the oxide film’s porous structure is electric broken-down, which is the second breakdown discharge process, the current density on the oxide film surface could affect the breakdown process significantly.

  13. Carbon contaminant in the ion processing of aluminum oxide film

    International Nuclear Information System (INIS)

    Chaug, Y.; Roy, N.

    1989-01-01

    Ion processing can induce contamination on the bombarded surface. However, this process is essential for the microelectronics device fabrication. Auger electron spectroscopy has been used to study the simultaneous deposition of carbon impurity during ion bombardment of magnetron rf-sputtering deposited aluminum oxide film. Ion bombardment on aluminum oxide results in a preferential removal of surface oxygen and a formation of a metastable state of aluminum suboxide. Cosputtered implanted carbon contaminant appears to have formed a new state of stoichiometry on the surface of the ion bombarded aluminum oxide and existed as an aluminum carbide. This phase has formed due to the interaction of the implanted carbon and the aluminum suboxide. The Ar + ion sputter etching rate is reduced for the carbon contaminated oxide. The electrical resistance of the aluminum oxide between two gold strips has been measured. It is found that the electrical resistance is also reduced due to the formation of the new stoichiometry on the surface

  14. Direct Electrochemistry of Horseradish Peroxidase on NiO Nanoflower Modified Electrode and Its Electrocatalytic Activity

    Directory of Open Access Journals (Sweden)

    Lijun Yan

    2016-09-01

    Full Text Available In this paper nickel oxide (NiO nanoflower was synthesized and used for the realization of direct electrochemistry of horseradish peroxidase (HRP. By using carbon ionic liquid electrode (CILE as the substrate electrode, NiO-HRP composite was casted on the surface of CILE with chitosan (CTS as the film forming material and the modified electrode was denoted as CTS/NiO-HRP/CILE. UV-Vis absorption and FT-IR spectra confirmed that HRP retained its native structure after mixed with NiO nanoflower. Direct electron transfer of HRP on the modified electrode was investigated by cyclic voltammetry with a pair of quasi-reversible redox waves appeared, indicating that the presence of NiO nanoflower on the electrode surface could accelerate the electron transfer rate between the electroactive center of HRP and the substrate electrode. Electrochemical behaviors of HRP on the modified electrode were carefully investigated. The HRP modified electrode showed excellent electrocatalytic activity to the reduction of trichloroacetic acid with wider linear range and lower detection limit. Therefore the presence of NiO nanoflower could provide a friendly biocompatible interface for immobilizing biomolecules and keeping their native structure. The fabricated electrochemical biosensor displayed the advantages such as high sensitivity, good reproducibility and long-term stability. This work is licensed under a Creative Commons Attribution 4.0 International License.

  15. Review of Zinc Oxide Thin Films

    Science.gov (United States)

    2014-12-23

    remains more difficult [12, 13].    Recent  research on n‐type extrinsic doping with group  III elements  revealed  that  Aluminium   (Al), Boron (B) and...tuned by  alloying  with magnesium oxide or cadmium oxide   from 7.9 eV to 2.3 eV,  spanning from deep ultraviolet (UV) to visible regions of the...88].    Doping  to  increase  and/  or  control  n‐type  electrical  conductivity is commonly done with group III elements such as  aluminium , boron

  16. Growth and thermal oxidation of Ru and ZrO2 thin films as oxidation protective layers

    NARCIS (Netherlands)

    Coloma Ribera, R.

    2017-01-01

    This thesis focuses on the study of physical and chemical processes occurring during growth and thermal oxidation of Ru and ZrO2 thin films. Acting as oxidation resistant capping materials to prevent oxidation of layers underneath, these films have several applications, i.e., in microelectronics

  17. Electronic properties of thermally formed thin iron oxide films

    International Nuclear Information System (INIS)

    Wielant, J.; Goossens, V.; Hausbrand, R.; Terryn, H.

    2007-01-01

    The oxide layer, present between an organic coating and the substrate, guarantees adhesion of the coating and plays a determinating role in the delamination rate of the organic coating. The purpose of this study is to compare the resistive and semiconducting properties of thermal oxides formed on steel in two different atmospheres at 250 deg. C: an oxygen rich atmosphere, air, and an oxygen deficient atmosphere, N 2 . In N 2 , a magnetite layer grows while in air a duplex oxide film forms composed by an inner magnetite layer and a thin outer hematite scale. The heat treatment for different amounts of time at high temperature was used as method to sample the thickness variation and change in electronic and semiconducting properties of the thermal oxide layers. Firstly, linear voltammetric measurements were performed to have a first insight in the electrochemical behavior of the thermal oxides in a borate buffer solution. Electrochemical impedance spectroscopy in the same buffer combined with the Mott-Schottky analysis were used to determine the semiconducting properties of the thermal oxides. By spectroscopic ellipsometry (SE) and atomic force microscopy (AFM), respectively, the thickness and roughness of the oxide layers were determined supporting the physical interpretation of the voltammetric and EIS data. These measurements clearly showed that oxide layers with different constitution, oxide resistance, flatband potential and doping concentration can be grown by changing the atmosphere

  18. Compositional analysis of silicon oxide/silicon nitride thin films

    Directory of Open Access Journals (Sweden)

    Meziani Samir

    2016-06-01

    Full Text Available Hydrogen, amorphous silicon nitride (SiNx:H abbreviated SiNx films were grown on multicrystalline silicon (mc-Si substrate by plasma enhanced chemical vapour deposition (PECVD in parallel configuration using NH3/SiH4 gas mixtures. The mc-Si wafers were taken from the same column of Si cast ingot. After the deposition process, the layers were oxidized (thermal oxidation in dry oxygen ambient environment at 950 °C to get oxide/nitride (ON structure. Secondary ion mass spectroscopy (SIMS, Rutherford backscattering spectroscopy (RBS, Auger electron spectroscopy (AES and energy dispersive X-ray analysis (EDX were employed for analyzing quantitatively the chemical composition and stoichiometry in the oxide-nitride stacked films. The effect of annealing temperature on the chemical composition of ON structure has been investigated. Some species, O, N, Si were redistributed in this structure during the thermal oxidation of SiNx. Indeed, oxygen diffused to the nitride layer into Si2O2N during dry oxidation.

  19. Synthesis of tin oxide nanoparticle film by cathodic electrodeposition.

    Science.gov (United States)

    Kim, Seok; Lee, Hochun; Park, Chang Min; Jung, Yongju

    2012-02-01

    Three-dimensional SnO2 nanoparticle films were deposited onto a copper substrate by cathodic electrodeposition in a nitric acid solution. A new formation mechanism for SnO2 films is proposed based on the oxidation of Sn2+ ion to Sn4+ ion by NO+ ion and the hydrolysis of Sn4+. The particle size of SnO2 was controlled by deposition potential. The SnO2 showed excellent charge capacity (729 mAh/g) at a 0.2 C rate and high rate capability (460 mAh/g) at a 5 C rate.

  20. Nanoporous zinc oxide films prepared by magnetron sputtering

    International Nuclear Information System (INIS)

    Ghimpu, L.; Lupan, O.; Popescu, L.; Tiginyanu, I.M.

    2011-01-01

    In this paper we demonstrate an inexpensive approach for the fabrication of nanoporous zinc oxide films by using magnetron sputtering. Study of the structural properties proves the crystallographic perfection of porous nanostructures and the possibility of its controlling by adjusting the technological parameters in the growth process. The XRD pattern of nanoporous ZnO films exhibits high intensity of the peaks relative to the background signal which is indicative of the ZnO hexagonal phase and a good crystallinity of the samples grown by magnetron sputtering.

  1. Superconducting oxide thin films by ion beam sputtering

    International Nuclear Information System (INIS)

    Kobrin, P.H.; DeNatale, J.F.; Housley, R.M.; Flintoff, J.F.; Harker, A.B.

    1987-01-01

    Superconducting thin films of ternary copper oxides from the Y-Ba-Cu-O and La-Sr-Cu-O systems have been deposited by ion beam sputtering of ceramic targets. Crystallographic orientation of the polycrystalline films has been shown to vary with substrate identity, deposition temperature and annealing temperature. The onset of the superconductive transition occurs near 90K in the Y-Ba-Cu-O system. Fe impurities of < 0.2% have been found to inhibit the superconducting transition, probably by migrating to the grain boundaries

  2. Tin oxide transparent thin-film transistors

    International Nuclear Information System (INIS)

    Presley, R E; Munsee, C L; Park, C-H; Hong, D; Wager, J F; Keszler, D A

    2004-01-01

    A SnO 2 transparent thin-film transistor (TTFT) is demonstrated. The SnO 2 channel layer is deposited by RF magnetron sputtering and then rapid thermal annealed in O 2 at 600 deg. C. The TTFT is highly transparent, and enhancement-mode behaviour is achieved by employing a very thin channel layer (10-20 nm). Maximum field-effect mobilities of 0.8 cm 2 V -1 s -1 and 2.0 cm 2 V -1 s -1 are obtained for enhancement- and depletion-mode devices, respectively. The transparent nature and the large drain current on-to-off ratio of 10 5 associated with the enhancement-mode behaviour of these devices may prove useful for novel gas-sensor applications

  3. Oxide films in laser additive manufactured Inconel 718

    International Nuclear Information System (INIS)

    Zhang, Y.N.; Cao, X.; Wanjara, P.; Medraj, M.

    2013-01-01

    A continuous-wave 5 kW fiber laser welding system was used in conduction mode to deposit Inconel® alloy 718 (IN718) by employing filler wire on as-serviced IN718 parent material (PM) substrates. The direct laser deposited (DLD) coupons and as-serviced IN718 PM were then evaluated through tensile testing. To understand the failure mechanisms, the tensile fracture surfaces of the as-serviced IN718 PM, DLD and DLD-PM samples were analyzed using scanning electron microscopy. The fracture surfaces revealed the presence of both Al 2 O 3 and Cr 2 O 3 films, although the latter was reasoned to be the main oxide in IN718. Both the experimental observations and thermodynamic analysis indicated that oxidation of some alloying elements in IN718 cannot be completely avoided during manufacturing, whether in the liquid state under vacuum (for casting, the electron beam melting, welding and/or deposition) or with inert gas protection (for welding or laser deposition). The exposed surface of the oxide film on the fracture surface has poor wetting with the metal and thus can constitute a lack of bonding or a crack with either the metal and/or another non-wetted side of the oxide film. On the other hand, the wetted face of the oxide film has good atom-to-atom contact with the metal and may nucleate some intermetallic compounds, such as Laves, Ni 3 Nb-δ, Nb-rich MC and γ′ compounds. The potential of their nucleation on Cr 2 O 3 was assessed using planar disregistry. Coherent planes were found between these intermetallics and Cr 2 O 3

  4. Mn-implanted, polycrystalline indium tin oxide and indium oxide films

    International Nuclear Information System (INIS)

    Scarlat, Camelia; Vinnichenko, Mykola; Xu Qingyu; Buerger, Danilo; Zhou Shengqiang; Kolitsch, Andreas; Grenzer, Joerg; Helm, Manfred; Schmidt, Heidemarie

    2009-01-01

    Polycrystalline conducting, ca. 250 nm thick indium tin oxide (ITO) and indium oxide (IO) films grown on SiO 2 /Si substrates using reactive magnetron sputtering, have been implanted with 1 and 5 at.% of Mn, followed by annealing in nitrogen or in vacuum. The effect of the post-growth treatment on the structural, electrical, magnetic, and optical properties has been studied. The roughness of implanted films ranges between 3 and 15 nm and XRD measurements revealed a polycrystalline structure. A positive MR has been observed for Mn-implanted and post-annealed ITO and IO films. It has been interpreted by considering s-d exchange. Spectroscopic ellipsometry has been used to prove the existence of midgap electronic states in the Mn-implanted ITO and IO films reducing the transmittance below 80%.

  5. Oxide (CeO{sub 2}, NiO, Co{sub 3}O{sub 4} and Mn{sub 3}O{sub 4})-promoted Pd/C electrocatalysts for alcohol electrooxidation in alkaline media

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Changwei; Tian, Zhiqun; Jiang, San Ping [School of Mechanical and Aerospace Engineering, Nanyang Technological University (Singapore); Shen, Peikang [School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275 (China)

    2008-01-01

    This study investigated Pt/C, Pd/C and oxide (CeO{sub 2}, NiO, Co{sub 3}O{sub 4} and Mn{sub 3}O{sub 4})-promoted Pd/C for electrooxidation reactions of methanol, ethanol, ethylene glycol and glycerol in alkaline media. The results show that Pd/C electrocatalysts alone have low activity and very poor stability for the alcohol electrooxidation. However, addition of oxides like CeO{sub 2}, NiO, Co{sub 3}O{sub 4} and Mn{sub 3}O{sub 4} significantly promotes catalytic activity and stability of the Pd/C electrocatalysts for the alcohol electrooxidation. The Pd-Co{sub 3}O{sub 4} (2:1, w:w)/C shows the highest activity for the electrooxidation of methanol, EG and glycerol while the most active catalyst for the ethanol electrooxidation is Pd-NiO (6:1, w:w)/C. On the other hand, Pd-Mn{sub 3}O{sub 4}/C shows significantly better performance stability than other oxide-promoted Pd/C for the alcohol electrooxidation. The poor stability of the Pd-Co{sub 3}O{sub 4}/C electrocatalysts is most likely related to the limited solubility of cobalt oxides in alkaline solutions. (author)

  6. Thin copper oxide films prepared by ion beam sputtering with subsequent thermal oxidation: Application in chemiresistors

    Energy Technology Data Exchange (ETDEWEB)

    Horak, P., E-mail: phorak@ujf.cas.cz [Nuclear Physics Institute, Academy of Sciences of the Czech Republic, 250 68 Řež (Czech Republic); Bejsovec, V.; Vacik, J.; Lavrentiev, V. [Nuclear Physics Institute, Academy of Sciences of the Czech Republic, 250 68 Řež (Czech Republic); Vrnata, M. [Department of Physics and Measurements, The University of Chemistry and Technology, Prague, Technická 5, 166 28 Prague 6 (Czech Republic); Kormunda, M. [Department of Physics, Jan Evangelista Purkyně University in Ústí nad Labem, České mládeže 8, 400 96 Ústí nad Labem (Czech Republic); Danis, S. [Department of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 5, 121 16 Prague 2 (Czech Republic)

    2016-12-15

    Highlights: • A rapid oxidation process of thin copper films. • Sheet resistance up to 10{sup 9} Ω/◊. • Mixed oxide phase at 200 °C with significant hydroxide presence. • Gas sensing response to 1000 ppm of hydrogen and methanol vapours. • Increased sensitivity with Pd and Au catalyst to hydrogen and methanol, respectively. - Abstract: Copper oxide films were prepared by thermal oxidation of thin Cu films deposited on substrates by ion beam sputtering. The subsequent oxidation was achieved in the temperature range of 200 °C–600 °C with time of treatment from 1 to 7 h (with a 1-h step) in a furnace open to air. At temperatures 250 °C–600 °C, the dominant phase formed was CuO, while at 200 °C mainly the Cu{sub 2}O phase was identified. However, the oxidation at 200 °C led to a more complicated composition − in the depth Cu{sub 2}O phase was observed, though in the near-surface layer the CuO dominant phase was found with a significant presence of Cu(OH){sub 2}. A limited amount of Cu{sub 2}O was also found in samples annealed at 600 °C. The sheet resistance R{sub S} of the as-deposited Cu sample was 2.22 Ω/□, after gradual annealing R{sub S} was measured in the range 2.64 MΩ/□–2.45 GΩ/□. The highest R{sub S} values were obtained after annealing at 300 °C and 350 °C, respectively. Oxygen depth distribution was studied using the {sup 16}O(α,α) nuclear reaction with the resonance at energy 3032 keV. It was confirmed that the higher oxidation degree of copper is located in the near-surface region. Preliminary tests of the copper oxide films as an active layer of a chemiresistor were also performed. Hydrogen and methanol vapours, with a concentration of 1000 ppm, were detected by the sensor at an operating temperature of 300 °C and 350 °C, respectively. The response of the sensors, pointed at the p-type conductivity, was improved by the addition of thin Pd or Au catalytic films to the oxidic film surface. Pd-covered films showed

  7. Degradation of zinc oxide thin films in aqueous environment. Pt. II. Coated films

    Energy Technology Data Exchange (ETDEWEB)

    Rosa, L. de; Mitton, D.B.; Monetta, T.; Bellucci, F. [Naples Univ. (Italy). Dept. of Materials and Production Engineering; Springer, J. [Zentrum fuer Sonnenenergie- und Wasserstoff-Forschung Baden-Wuerttemberg (ZSW), Stuttgart (Germany)

    2001-12-01

    cn Part I of this research, the degradation mechanism of two different bare ZnO thin films was assessed. Degradation of the electrical properties of ZnO as well as changes in morphology were observed for both films. In the current paper, the degradation of zinc oxide thin films coated with protective acrylic paint is addressed during exposure to (i) an aqueous 3.5% NaCl solution at 85 C and (ii) a standard damp heat test at 85% R.H. and 85 C. Electrical and electrochemical techniques were employed to monitor zinc oxide degradation during exposure to the test environments. Electrochemical Impedance Spectroscopy was employed to investigate the delamination phenomena at the ZnO/coating interface and a simple equivalent circuit was developed to quantitatively measure the delamination ratio. The effect of different silane based adhesion promoters (glycidil-oxypropyl-trimethoxy-silane and aminopropyl-trimethoxy-silane) was also investigated. (orig.)

  8. Optical scattering characteristic of annealed niobium oxide films

    International Nuclear Information System (INIS)

    Lai Fachun; Li Ming; Wang Haiqian; Hu Hailong; Wang Xiaoping; Hou, J.G.; Song Yizhou; Jiang Yousong

    2005-01-01

    Niobium oxide (Nb 2 O 5 ) films with thicknesses ranging from 200 to 1600 nm were deposited on fused silica at room temperature by low frequency reactive magnetron sputtering system. In order to study the optical losses resulting from the microstructures, the films with 500 nm thickness were annealed at temperatures between 600 and 1100 deg. C, and films with thicknesses from 200 to 1600 nm were annealed at 800 deg. C. Scanning electron microscopy and atomic force microscopy images show that the root mean square of surface roughness, the grain size, voids, microcracks, and grain boundaries increase with increasing both the annealing temperature and the thickness. Correspondingly, the optical transmittance and reflectance decrease, and the optical loss increases. The mechanisms of the optical losses are discussed. The results suggest that defects in the volume and the surface roughness should be the major source for the optical losses of the annealed films by causing pronounced scattering. For samples with a determined thickness, there is a critical annealing temperature, above which the surface scattering contributes to the major optical losses. In the experimental scope, for the films annealed at temperatures below 900 deg. C, the major optical losses resulted from volume scattering. However, surface roughness was the major source for the optical losses when the 500-nm films were annealed at temperatures above 900 deg. C

  9. Indium tin oxide films prepared via wet chemical route

    International Nuclear Information System (INIS)

    Legnani, C.; Lima, S.A.M.; Oliveira, H.H.S.; Quirino, W.G.; Machado, R.; Santos, R.M.B.; Davolos, M.R.; Achete, C.A.; Cremona, M.

    2007-01-01

    In this work, indium tin oxide (ITO) films were prepared using a wet chemical route, the Pechini method. This consists of a polyesterification reaction between an α-hydroxicarboxylate complex (indium citrate and tin citrate) with a polyalcohol (ethylene glycol) followed by a post annealing at 500 deg. C. A 10 at.% of doping of Sn 4+ ions into an In 2 O 3 matrix was successfully achieved through this method. In order to characterize the structure, the morphology as well as the optical and electrical properties of the produced ITO films, they were analyzed using different experimental techniques. The obtained films are highly transparent, exhibiting transmittance of about 85% at 550 nm. They are crystalline with a preferred orientation of [222]. Microscopy discloses that the films are composed of grains of 30 nm average size and 0.63 nm RMS roughness. The films' measured resistivity, mobility and charge carrier concentration were 5.8 x 10 -3 Ω cm, 2.9 cm 2 /V s and - 3.5 x 10 20 /cm 3 , respectively. While the low mobility value can be related to the small grain size, the charge carrier concentration value can be explained in terms of the high oxygen concentration level resulting from the thermal treatment process performed in air. The experimental conditions are being refined to improve the electrical characteristics of the films while good optical, chemical, structural and morphological qualities already achieved are maintained

  10. Structural and Electrochemical Properties of Lithium Nickel Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Gyu-bong Cho

    2014-01-01

    Full Text Available LiNiO2 thin films were fabricated by RF magnetron sputtering. The microstructure of the films was determined by X-ray diffraction and field-emission scanning electron microscopy. The electrochemical properties were investigated with a battery cycler using coin-type half-cells. The LiNiO2 thin films annealed below 500°C had the surface carbonate. The results suggest that surface carbonate interrupted the Li intercalation and deintercalation during charge/discharge. Although the annealing process enhanced the crystallization of LiNiO2, the capacity did not increase. When the annealing temperature was increased to 600°C, the FeCrNiO4 oxide phase was generated and the discharge capacity decreased due to an oxygen deficiency in the LiNiO2 thin film. The ZrO2-coated LiNiO2 thin film provided an improved discharge capacity compared to bare LiNiO2 thin film suggesting that the improved electrochemical characteristic may be attributed to the inhibition of surface carbonate by ZrO2 coating layer.

  11. Microstructure and protection characteristics of the naturally formed oxide films on Mg–xZn alloys

    International Nuclear Information System (INIS)

    Song, Yingwei; Han, En-Hou; Dong, Kaihui; Shan, Dayong; Yim, Chang Dong; You, Bong Sun

    2013-01-01

    Highlights: •The oxide films on Mg–xZn alloys consist of similar chemical composition. •The higher Zn content results in the thicker but higher defect of the oxide films. •The oxide films exhibit different protection performance under various potentials. -- Abstract: The naturally formed oxide films on Mg–2Zn and Mg–5Zn alloys were investigated by atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and electrochemical measurements. The oxide films on the both alloys present a similar chemical composition, consisting of surface layer of basic magnesium carbonate and MgO following with MgO and ZnO, but the oxide film on Mg–5Zn is thicker and contains more defects. The protection performance of the oxide film on Mg–5Zn is worse under open circuit potential but better in a suitable anodic potential scope compared with that on Mg–2Zn alloy

  12. Reduction of graphene oxide and its effect on square resistance of reduced graphene oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Hou, Zhaoxia; Zhou, Yin; Li, Guang Bin; Wang, Shaohong; Wang, Mei Han; Hu, Xiaodan; Li, Siming [Liaoning Province Key Laboratory of New Functional Materials and Chemical Technology, School ofMechanical Engineering, Shenyang University, Shenyang (China)

    2015-06-15

    Graphite oxide was prepared via the modified Hummers’ method and graphene via chemical reduction. Deoxygenation efficiency of graphene oxide was compared among single reductants including sodium borohydride, hydrohalic acids, hydrazine hydrate, and vitamin C. Two-step reduction of graphene oxide was primarily studied. The reduced graphene oxide was characterized by XRD, TG, SEM, XPS, and Raman spectroscopy. Square resistance was measured as well. Results showed that films with single-step N2H4 reduction have the best transmittance and electrical conductivity with square resistance of ~5746 Ω/sq at 70% transmittance. This provided an experimental basis of using graphene for electronic device applications.

  13. Influence of oxidation state on the pH dependence of hydrous iridium oxide films

    International Nuclear Information System (INIS)

    Steegstra, Patrick; Ahlberg, Elisabet

    2012-01-01

    Many electrochemical reactions taking place in aqueous solution consume or produce protons. The pH in the diffusion layer can therefore be significantly altered during the reaction and there is a need for in situ pH measurements tracing this near surface pH. In the present paper the rotating ring disc technique was used to measure near surface pH changes during oxygen reduction, utilising hydrous iridium oxide as the pH sensing probe. Before such experiments a good understanding of the pH sensing properties of these films is required and the impact of the oxidation state of the film on the pH sensing properties was investigated as well as the influence of solution redox species. The pH sensitivity (depicted by dE/dpH) was found to depend on the average oxidation state of the film in a manner resembling the cyclic voltammetry response. In all cases the pH response is “supernernstian” with more than one proton per electron. The origin of this behaviour is discussed in the context of acid-base properties of the film and the existence of both hydrous and anhydrous oxide phases. The pH response depends also on the redox properties of the solution but can be optimised for various purposes by conditioning the film at different potentials. This was clearly illustrated by adding hydrogen peroxide, an intermediate in the oxygen reduction reaction, to the solution. It was shown that hydrous iridium oxide can be used as a reliable in situ pH sensor provided that care is taken to optimise the oxidation state of the film.

  14. Modification of graphene oxide films by radiofrequency N2 plasma

    Science.gov (United States)

    Neustroev, E. P.; Burtseva, E. K.; Soloviev, B. D.; Prokopiev, A. R.; Popov, V. I.; Timofeev, V. B.

    2018-04-01

    The effect of treatment in nitrogen plasma on the properties of partially reduced graphene oxide (rGO) was studied. A comparison is made between two different sample locations in the reaction chamber. It is shown that in the case when rGO films were turned towards the inductor of the plasma system, the etching rate is much higher. Effective nitrogen functionalization of rGO was established in the second position, when the rGO films were turned in the opposite direction. In this case, the nitrogen content increases to 5 at% of the initial value. The change in the current-voltage characteristics is observed under illumination, which is independent of the wavelength. On and off daylight changes the resistance to 30% of the initial value. The magnitude of the photocurrent increases depending on the applied voltage. The effect is most noticeable for thin rGO films 10-15 nm in thickness.

  15. Intrinsic defect oriented visible region absorption in zinc oxide films

    Science.gov (United States)

    Rakhesh, V.; Shankar, Balakrishnan

    2018-05-01

    Zinc Oxide films were deposited on the glass substrate using vacuum arc sputtering technology. Films were prepared in oxygen ambience for 10mA and 15 mA deposition current separately. The UV-Visible spectroscopy of the samples showed that both samples possess sharp absorption near 3.5eV which is the characteristic band gap absorption energy of ZnO films. The absorption coefficient were calculated for the samples and the (αℎϑ)2 vs energy plot is drawn. The plot suggested that in addition to the sharp band edge absorption, the sample prepared at 10mA deposition current showed sharp absorption edge near 1.51eV and that at 15 mA showed absorption edge near 1.47eV. This refers to the presence of an intrinsic defect level which is likely to be deep in the band gap.

  16. Nanoporous cerium oxide thin film for glucose biosensor.

    Science.gov (United States)

    Saha, Shibu; Arya, Sunil K; Singh, S P; Sreenivas, K; Malhotra, B D; Gupta, Vinay

    2009-03-15

    Nanoporous cerium oxide (CeO(2)) thin film deposited onto platinum (Pt) coated glass plate using pulsed laser deposition (PLD) has been utilized for immobilization of glucose oxidase (GOx). Atomic force microscopy studies reveal the formation of nanoporous surface morphology of CeO(2) thin film. Response studies carried out using differential pulsed voltammetry (DPV) and optical measurements show that the GOx/CeO(2)/Pt bio-electrode shows linearity in the range of 25-300 mg/dl of glucose concentration. The low value of Michaelis-Menten constant (1.01 mM) indicates enhanced enzyme affinity of GOx to glucose. The observed results show promising application of the nanoporous CeO(2) thin film for glucose sensing application without any surface functionalization or mediator.

  17. Fluorescence and thermoluminescence in silicon oxide films rich in silicon

    International Nuclear Information System (INIS)

    Berman M, D.; Piters, T. M.; Aceves M, M.; Berriel V, L. R.; Luna L, J. A.

    2009-10-01

    In this work we determined the fluorescence and thermoluminescence (TL) creation spectra of silicon rich oxide films (SRO) with three different silicon excesses. To study the TL of SRO, 550 nm of SRO film were deposited by Low Pressure Chemical Vapor Deposition technique on N-type silicon substrates with resistivity in the order of 3 to 5 Ω-cm with silicon excess controlled by the ratio of the gases used in the process, SRO films with Ro= 10, 20 and 30 (12-6% silicon excess) were obtained. Then, they were thermally treated in N 2 at high temperatures to diffuse and homogenize the silicon excess. In the fluorescence spectra two main emission regions are observed, one around 400 nm and one around 800 nm. TL creation spectra were determined by plotting the integrated TL intensity as function of the excitation wavelength. (Author)

  18. Combinatorial study of zinc tin oxide thin-film transistors

    Science.gov (United States)

    McDowell, M. G.; Sanderson, R. J.; Hill, I. G.

    2008-01-01

    Groups of thin-film transistors using a zinc tin oxide semiconductor layer have been fabricated via a combinatorial rf sputtering technique. The ZnO :SnO2 ratio of the film varies as a function of position on the sample, from pure ZnO to SnO2, allowing for a study of zinc tin oxide transistor performance as a function of channel stoichiometry. The devices were found to have mobilities ranging from 2to12cm2/Vs, with two peaks in mobility in devices at ZnO fractions of 0.80±0.03 and 0.25±0.05, and on/off ratios as high as 107. Transistors composed predominantly of SnO2 were found to exhibit light sensitivity which affected both the on/off ratios and threshold voltages of these devices.

  19. Manganese oxide nanowires, films, and membranes and methods of making

    Science.gov (United States)

    Suib, Steven Lawrence [Storrs, CT; Yuan, Jikang [Storrs, CT

    2008-10-21

    Nanowires, films, and membranes comprising ordered porous manganese oxide-based octahedral molecular sieves, and methods of making, are disclosed. A single crystal ultra-long nanowire includes an ordered porous manganese oxide-based octahedral molecular sieve, and has an average length greater than about 10 micrometers and an average diameter of about 5 nanometers to about 100 nanometers. A film comprises a microporous network comprising a plurality of single crystal nanowires in the form of a layer, wherein a plurality of layers is stacked on a surface of a substrate, wherein the nanowires of each layer are substantially axially aligned. A free standing membrane comprises a microporous network comprising a plurality of single crystal nanowires in the form of a layer, wherein a plurality of layers is aggregately stacked, and wherein the nanowires of each layer are substantially axially aligned.

  20. Tungsten oxide nanowires grown on amorphous-like tungsten films

    International Nuclear Information System (INIS)

    Dellasega, D; Pezzoli, A; Russo, V; Passoni, M; Pietralunga, S M; Nasi, L; Conti, C; Vahid, M J; Tagliaferri, A

    2015-01-01

    Tungsten oxide nanowires have been synthesized by vacuum annealing in the range 500–710 °C from amorphous-like tungsten films, deposited on a Si(100) substrate by pulsed laser deposition (PLD) in the presence of a He background pressure. The oxygen required for the nanowires formation is already adsorbed in the W matrix before annealing, its amount depending on deposition parameters. Nanowire crystalline phase and stoichiometry depend on annealing temperature, ranging from W_1_8O_4_9-Magneli phase to monoclinic WO_3. Sufficiently long annealing induces the formation of micrometer-long nanowires, up to 3.6 μm with an aspect ratio up to 90. Oxide nanowire growth appears to be triggered by the crystallization of the underlying amorphous W film, promoting their synthesis at low temperatures. (paper)

  1. Photocatalytic oxide films in the built environment

    Science.gov (United States)

    Österlund, Lars; Topalian, Zareh

    2014-11-01

    The possibility to increase human comfort in buildings is a powerful driving force for the introduction of new technology. Among other things our sense of comfort depends on air quality, temperature, lighting level, and the possibility of having visual contact between indoors and outdoors. Indeed there is an intimate connection between energy, comfort, and health issues in the built environment, leading to a need for intelligent building materials and green architecture. Photocatalytic materials can be applied as coatings, filters, and be embedded in building materials to provide self-cleaning, antibacterial, air cleaning, deodorizing, and water cleaning functions utilizing either solar light or artificial illumination sources - either already present in buildings, or by purposefully designed luminaries. Huge improvements in indoor comfort can thus be made, and also alleviate negative health effects associated with buildings, such as the sick-house syndrome. At the same time huge cost savings can be made by reducing maintenance costs. Photocatalytic oxides can be chemically modified by changing their acid-base surface properties, which can be used to overcome deactivation problems commonly encountered for TiO2 in air cleaning applications. In addition, the wetting properties of oxides can be tailored by surface chemical modifications and thus be made e.g. oleophobic and water repellent. Here we show results of surface acid modified TiO2 coatings on various substrates by means of photo-fixation of surface sulfate species by a method invented in our group. In particular, we show that such surface treatments of photocatalytic concrete made by mixing TiO2 nanoparticles in reactive concrete powders result in concrete surfaces with beneficial self-cleaning properties. We propose that such approaches are feasible for a number of applications in the built environment, including glass, tiles, sheet metals, plastics, etc.

  2. Photocatalytic oxide films in the built environment

    International Nuclear Information System (INIS)

    Österlund, Lars; Topalian, Zareh

    2014-01-01

    The possibility to increase human comfort in buildings is a powerful driving force for the introduction of new technology. Among other things our sense of comfort depends on air quality, temperature, lighting level, and the possibility of having visual contact between indoors and outdoors. Indeed there is an intimate connection between energy, comfort, and health issues in the built environment, leading to a need for intelligent building materials and green architecture. Photocatalytic materials can be applied as coatings, filters, and be embedded in building materials to provide self-cleaning, antibacterial, air cleaning, deodorizing, and water cleaning functions utilizing either solar light or artificial illumination sources – either already present in buildings, or by purposefully designed luminaries. Huge improvements in indoor comfort can thus be made, and also alleviate negative health effects associated with buildings, such as the sick-house syndrome. At the same time huge cost savings can be made by reducing maintenance costs. Photocatalytic oxides can be chemically modified by changing their acid-base surface properties, which can be used to overcome deactivation problems commonly encountered for TiO 2 in air cleaning applications. In addition, the wetting properties of oxides can be tailored by surface chemical modifications and thus be made e.g. oleophobic and water repellent. Here we show results of surface acid modified TiO 2 coatings on various substrates by means of photo-fixation of surface sulfate species by a method invented in our group. In particular, we show that such surface treatments of photocatalytic concrete made by mixing TiO 2 nanoparticles in reactive concrete powders result in concrete surfaces with beneficial self-cleaning properties. We propose that such approaches are feasible for a number of applications in the built environment, including glass, tiles, sheet metals, plastics, etc

  3. Glancing angle x-ray studies of oxide films

    International Nuclear Information System (INIS)

    Davenport, A.J.; Isaacs, H.S.

    1989-01-01

    High brightness synchrotron radiation incident at glancing angles has been used to study inhibiting species present in low concentrations in oxide films on aluminum. Glancing incident angle fluorescence measurements give surface-sensitive information on the valence state of elements from the shape of the x-ray absorption edge. Angle-resolved measurements show the depth distribution of the species present. 15 refs., 4 figs

  4. Bilayered Oxide thin films for transparent electrode application

    Science.gov (United States)

    Dutta, Titas; Narayan, Jagdish

    2008-10-01

    Ga doped ZnO films with electrical and optical properties comparable to indium tin oxide (ITO) is a promising candidate for transparent conducting oxides (TCOs) because of its superior stability in hydrogen environment, benign nature and relatively inexpensive supply. However, ZnO based TCO films suffer from low work function, which is a critical parameter for device applications. We report here the growth of a novel bilayered structure consisting of very thin (few monolayers) ITO, MoOx layer on Zn0.95Ga0.05O film for transparent electrode applications by using pulsed laser deposition technique at different temperatures and oxygen partial pressure. The characteristics of the ITO film and the heterostructure have been investigated in detail using XRD, TEM, XPS, and electrical and optical property measurements. It is envisaged that the overall transmittance and the resistivity are dictated by the thicker layer of ZnGa0.05O beneath the ITO layer. Hence, this study is aimed to improve the surface characteristics without affecting the overall transmittance and sheet resistance. This will enhance the transport of the carriers across the heterojunction in the device, thus, resulting in the increase in device efficiency.

  5. Hafnium carbide formation in oxygen deficient hafnium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Rodenbücher, C. [Forschungszentrum Jülich GmbH, Peter Grünberg Institute (PGI-7), JARA-FIT, 52425 Jülich (Germany); Hildebrandt, E.; Sharath, S. U.; Kurian, J.; Komissinskiy, P.; Alff, L. [Technische Universität Darmstadt, Institute of Materials Science, 64287 Darmstadt (Germany); Szot, K. [Forschungszentrum Jülich GmbH, Peter Grünberg Institute (PGI-7), JARA-FIT, 52425 Jülich (Germany); University of Silesia, A. Chełkowski Institute of Physics, 40-007 Katowice (Poland); Breuer, U. [Forschungszentrum Jülich GmbH, Central Institute for Engineering, Electronics and Analytics (ZEA-3), 52425 Jülich (Germany); Waser, R. [Forschungszentrum Jülich GmbH, Peter Grünberg Institute (PGI-7), JARA-FIT, 52425 Jülich (Germany); RWTH Aachen, Institute of Electronic Materials (IWE 2), 52056 Aachen (Germany)

    2016-06-20

    On highly oxygen deficient thin films of hafnium oxide (hafnia, HfO{sub 2−x}) contaminated with adsorbates of carbon oxides, the formation of hafnium carbide (HfC{sub x}) at the surface during vacuum annealing at temperatures as low as 600 °C is reported. Using X-ray photoelectron spectroscopy the evolution of the HfC{sub x} surface layer related to a transformation from insulating into metallic state is monitored in situ. In contrast, for fully stoichiometric HfO{sub 2} thin films prepared and measured under identical conditions, the formation of HfC{sub x} was not detectable suggesting that the enhanced adsorption of carbon oxides on oxygen deficient films provides a carbon source for the carbide formation. This shows that a high concentration of oxygen vacancies in carbon contaminated hafnia lowers considerably the formation energy of hafnium carbide. Thus, the presence of a sufficient amount of residual carbon in resistive random access memory devices might lead to a similar carbide formation within the conducting filaments due to Joule heating.

  6. Diode laser heat treatment of lithium manganese oxide films

    International Nuclear Information System (INIS)

    Pröll, J.; Kohler, R.; Mangang, A.; Ulrich, S.; Bruns, M.; Seifert, H.J.; Pfleging, W.

    2012-01-01

    The crystallization of lithium manganese oxide thin films prepared by radio frequency magnetron sputtering on stainless steel substrates under 10 Pa argon pressure is demonstrated by a laser annealing technique. Laser annealing processes were developed as a function of annealing time and temperature with the objective to form an electrochemically active lithium manganese oxide cathode. It is demonstrated, that laser annealing with 940 nm diode laser radiation and an annealing time of 2000 s at 600 °C delivers appropriate parameters for formation of a crystalline spinel-like phase. Characteristic features of this phase could be detected via Raman spectroscopy, showing the characteristic main Raman band at 627 cm -1 . Within cyclic voltammetric measurements, the two characteristic redox pairs for spinel lithium manganese oxide in the 4 V region could be detected, indicating that the film was well-crystallized and de-/intercalation processes were reversible. Raman post-analysis of a cycled cathode showed that the spinel-like structure was preserved within the cycling process but mechanical degradation effects such as film cracking were observed via scanning electron microscopy. Typical features for the formation of an additional surface reaction layer could be detected using X-ray photoelectron spectroscopy.

  7. Preparation of a Counter Electrode with P-Type NiO and Its Applications in Dye-Sensitized Solar Cell

    Directory of Open Access Journals (Sweden)

    Chuen-Shii Chou

    2010-01-01

    Full Text Available This study investigates the applicability of a counter electrode with a P-type semiconductor oxide (such as NiO on a dye-sensitized solar cell (DSSC. The counter electrode is fabricated by depositing an NiO film on top of a Pt film, which has been deposited on a Fluorine-doped tin oxide (FTO glass using an ion-sputtering coater (or E-beam evaporator, using a simple spin coating method. This study also examines the effect of the average thickness of TiO2 film deposited on a working electrode upon the power conversion efficiency of a DSSC. This study shows that the power conversion efficiency of a DSSC with a Pt(E/NiO counter electrode (4.28% substantially exceeds that of a conventional DSSC with a Pt(E counter electrode (3.16% on which a Pt film was deposited using an E-beam evaporator. This result is attributed to the fact that the NiO film coated on the Pt(E counter electrode improves the electrocatalytic activity of the counter electrode.

  8. Polymer thin film as coating layer to prevent corrosion of metal/metal oxide film

    Science.gov (United States)

    Sarkar, Suman; Kundu, Sarathi

    2018-04-01

    Thin film of polymer is used as coating layer and the corrosion of metal/metal oxide layer is studied with the variation of the thickness of the coating layer. The thin layer of polystyrene is fabricated using spin coating method on copper oxide (CuO) film which is deposited on glass substrate using DC magnetron sputtering technique. Thickness of the polystyrene and the CuO layers are determined using X-ray reflectivity (XRR) technique. CuO thin films coated with the polystyrene layer are exposed to acetic acid (2.5 v/v% aqueous CH3COOH solution) environments and are subsequently analyzed using UV-Vis spectroscopy and atomic force microscopy (AFM). Surface morphology of the film before and after interaction with the acidic environment is determined using AFM. Results obtained from the XRR and UV-Vis spectroscopy confirm that the thin film of polystyrene acts as an anticorrosion coating layer and the strength of the coating depends upon the polymer layer thickness at a constant acid concentration.

  9. Effect of mass density on surface morphology of electrodeposited manganese oxide films

    Science.gov (United States)

    Singh, Avtar; Kumar, Davinder; Thakur, Anup; Kaur, Raminder

    2018-05-01

    This work focus on high surface area morphology of manganese oxide films which are currently required for electrochemical capacitor electrode to enhance their performance. Electrodeposition of manganese oxide films was carried out using Chronoamperometry for different deposition time ranging from 30 to 120 sec. Cronoamperomertic I-T integrated data have been used to analyze active mass of all electrodeposited films. Morphological study of the deposited films with different mass was carried out through scanning electron microscopy. Film deposited for 30 sec time show highest porous morphology than others. Manganese oxide films with high porosity are suitable for electrochemical capacitor electrode.

  10. Stable solar-driven oxidation of water by semiconducting photoanodes protected by transparent catalytic nickel oxide films

    KAUST Repository

    Sun, Ke; Saadi, Fadl H.; Lichterman, Michael F.; Hale, William G.; Wang, Hsinping; Zhou, Xinghao; Plymale, Noah T.; Omelchenko, Stefan T.; He, Jr-Hau; Papadantonakis, Kimberly M.; Brunschwig, Bruce S.; Lewis, Nathan S.

    2015-01-01

    Reactively sputtered nickel oxide (NiOx) films provide transparent, antireflective, electrically conductive, chemically stable coatings that also are highly active electrocatalysts for the oxidation of water to O2(g). These NiOx coatings provide

  11. Strain-induced phenomenon in complex oxide thin films

    Science.gov (United States)

    Haislmaier, Ryan

    Complex oxide materials wield an immense spectrum of functional properties such as ferroelectricity, ferromagnetism, magnetoelectricity, optoelectricity, optomechanical, magnetoresistance, superconductivity, etc. The rich coupling between charge, spin, strain, and orbital degrees of freedom makes this material class extremely desirable and relevant for next generation electronic devices and technologies which are trending towards nanoscale dimensions. Development of complex oxide thin film materials is essential for realizing their integration into nanoscale electronic devices, where theoretically predicted multifunctional capabilities of oxides could add tremendous value. Employing thin film growth strategies such as epitaxial strain and heterostructure interface engineering can greatly enhance and even unlock novel material properties in complex oxides, which will be the main focus of this work. However, physically incorporating oxide materials into devices remains a challenge. While advancements in molecular beam epitaxy (MBE) of thin film oxide materials has led to the ability to grow oxide materials with atomic layer precision, there are still major limitations such as controlling stoichiometric compositions during growth as well as creating abrupt interfaces in multi-component layered oxide structures. The work done in this thesis addresses ways to overcome these limitations in order to harness intrinsic material phenomena. The development of adsorption-controlled stoichiometric growth windows of CaTiO3 and SrTiO3 thin film materials grown by hybrid MBE where Ti is supplied using metal-organic titanium tetraisopropoxide material is thoroughly outlined. These growth windows enable superior epitaxial strain-induced ferroelectric and dielectric properties to be accessed as demonstrated by chemical, structural, electrical, and optical characterization techniques. For tensile strained CaTiO3 and compressive strained SrTiO 3 films, the critical effects of

  12. Polycrystalline Mn-alloyed indium tin oxide films

    International Nuclear Information System (INIS)

    Scarlat, Camelia; Schmidt, Heidemarie; Xu, Qingyu; Vinnichenko, Mykola; Kolitsch, Andreas; Helm, Manfred; Iacomi, Felicia

    2008-01-01

    Magnetic ITO films are interesting for integrating ITO into magneto-optoelectronic devices. We investigated n-conducting indium tin oxide (ITO) films with different Mn doping concentration which have been grown by chemical vapour deposition using targets with the atomic ratio In:Sn:Mn=122:12:0,114:12:7, and 109:12:13. The average film roughness ranges between 30 and 50 nm and XRD patterns revealed a polycrystalline structure. Magnetotransport measurements revealed negative magnetoresistance for all the samples, but high field positive MR can be clearly observed at 5 K with increasing Mn doping concentration. Spectroscopic ellipsometry (SE) has been used to prove the existence of midgap states in the Mn-alloyed ITO films revealing a transmittance less than 80%. A reasonable model for the ca. 250 nm thick Mn-alloyed ITO films has been developed to extract optical constants from SE data below 3 eV. Depending on the Mn content, a Lorentz oscillator placed between 1 and 2 eV was used to model optical absorption below the band gap

  13. Electrochromic Properties of Tungsten Oxide Films Prepared by Reactive Sputtering

    Science.gov (United States)

    Kim, Min Hong; Kang, Tai Young; Jung, Yu Sup; Kim, Kyung Hwan

    2013-05-01

    WO3-x thin films were deposited on induim tin oxide (ITO) glass substrates with various oxygen flow ratios from 0.55 to 0.7 by the reactive facing-target sputtering method, at a power density of 4 W/cm2 and room temperature. The structural properties of the WO3-x thin films were measured by X-ray diffractometry and Raman spectral analysis. As-deposited WO3-x thin films had an amorphous structure. In the Raman spectra, WO3-x thin films exhibited two strong peaks at 770 and 950 cm-1 attributed to the vibrations of W6+-O and W6+=O bonds, respectively. The electrochemical and optical properties of WO3-x thin films were measured by cyclic voltammetry and UV/vis spectrometry. The results showed the highest charge density at an oxygen flow ratio of 0.7 and the highest transmittance in the visible range. The maximum coloration efficiency was 30.82 cm2/C at an oxygen flow ratio of 0.7.

  14. Porous Zinc Oxide Thin Films: Synthesis Approaches and Applications

    Directory of Open Access Journals (Sweden)

    Marco Laurenti

    2018-02-01

    Full Text Available Zinc oxide (ZnO thin films have been widely investigated due to their multifunctional properties, i.e., catalytic, semiconducting and optical. They have found practical use in a wide number of application fields. However, the presence of a compact micro/nanostructure has often limited the resulting material properties. Moreover, with the advent of low-dimensional ZnO nanostructures featuring unique physical and chemical properties, the interest in studying ZnO thin films diminished more and more. Therefore, the possibility to combine at the same time the advantages of thin-film based synthesis technologies together with a high surface area and a porous structure might represent a powerful solution to prepare ZnO thin films with unprecedented physical and chemical characteristics that may find use in novel application fields. Within this scope, this review offers an overview on the most successful synthesis methods that are able to produce ZnO thin films with both framework and textural porosities. Moreover, we discuss the related applications, mainly focused on photocatalytic degradation of dyes, gas sensor fabrication and photoanodes for dye-sensitized solar cells.

  15. Surface and sub-surface thermal oxidation of thin ruthenium films

    NARCIS (Netherlands)

    Coloma Ribera, R.; van de Kruijs, Robbert Wilhelmus Elisabeth; Kokke, S.; Zoethout, E.; Yakshin, Andrey; Bijkerk, Frederik

    2014-01-01

    A mixed 2D (film) and 3D (nano-column) growth of ruthenium oxide has been experimentally observed for thermally oxidized polycrystalline ruthenium thin films. Furthermore, in situ x-ray reflectivity upon annealing allowed the detection of 2D film growth as two separate layers consisting of low

  16. Thermal oxidation of Ni films for p-type thin-film transistors

    KAUST Repository

    Jiang, Jie; Wang, Xinghui; Zhang, Qing; Li, Jingqi; Zhang, Xixiang

    2013-01-01

    p-Type nanocrystal NiO-based thin-film transistors (TFTs) are fabricated by simply oxidizing thin Ni films at temperatures as low as 400 °C. The highest field-effect mobility in a linear region and the current on-off ratio are found to be 5.2 cm2 V-1 s-1 and 2.2 × 103, respectively. X-ray diffraction, transmission electron microscopy and electrical performances of the TFTs with "top contact" and "bottom contact" channels suggest that the upper parts of the Ni films are clearly oxidized. In contrast, the lower parts in contact with the gate dielectric are partially oxidized to form a quasi-discontinuous Ni layer, which does not fully shield the gate electric field, but still conduct the source and drain current. This simple method for producing p-type TFTs may be promising for the next-generation oxide-based electronic applications. © 2013 the Owner Societies.

  17. Solar absorption and thermal emission properties of multiwall carbon nanotube/nickel oxide nanocomposite thin films synthesized by sol-gel process

    CSIR Research Space (South Africa)

    Roro, Kittessa T

    2012-05-01

    Full Text Available Multiwall carbon nanotubes (MWCNTs)/nickel oxide (NiO) nanocomposites were successfully prepared by a sol–gel process and coated on an aluminium substrate. The MWCNTs were chemically functionalized and then added into NiO alcogels, and magnetic...

  18. Enhancement of Low-field Magnetoresistance in Self-Assembled Epitaxial La0.67Ca0.33MnO3:NiO and La0.67Ca0.33MnO3:Co3O4 Composite Films via Polymer-Assisted Deposition.

    Science.gov (United States)

    Zhou, Meng; Li, Yuling; Jeon, Il; Yi, Qinghua; Zhu, Xuebin; Tang, Xianwu; Wang, Haiyan; Fei, Ling; Sun, Yuping; Deng, Shuguang; Matsuo, Yutaka; Luo, Hongmei; Zou, Guifu

    2016-07-06

    Polymer-assisted deposition method has been used to fabricate self-assembled epitaxial La0.67Ca0.33MnO3:NiO and La0.67Ca0.33MnO3:Co3O4 films on LaAlO3 substrates. Compared to pulsed-laser deposition method, polymer-assisted deposition provides a simpler and lower-cost approach to self-assembled composite films with enhanced low-field magnetoresistance effect. After the addition of NiO or Co3O4, triangular NiO and tetrahedral Co3O4 nanoparticles remain on the surface of La0.67Ca0.33MnO3 films. This results in a dramatic increase in resistivity of the films from 0.0061 Ω•cm to 0.59 Ω•cm and 1.07 Ω•cm, and a decrease in metal-insulator transition temperature from 270 K to 180 K and 172 K by the addition of 10%-NiO and 10%-Co3O4, respectively. Accordingly, the maximum absolute magnetoresistance value is improved from -44.6% to -59.1% and -52.7% by the addition of 10%-NiO and 10%-Co3O4, respectively. The enhanced low-field magnetoresistance property is ascribed to the introduced insulating phase at the grain boundaries. The magnetism is found to be more suppressed for the La0.67Ca0.33MnO3:Co3O4 composite films than the La0.67Ca0.33MnO3:NiO films, which can be attributed to the antiferromagnetic properties of the Co3O4 phase. The solution-processed composite films show enhanced low-field magnetoresistance effect which are crucial in practical applications. We expect our polymer-assisted deposited films paving the pathway in the field of hole-doped perovskites with their intrinsic colossal magnetoresistance.

  19. Thin copper oxide films prepared by ion beam sputtering with subsequent thermal oxidation: Application in chemiresistors

    Science.gov (United States)

    Horak, P.; Bejsovec, V.; Vacik, J.; Lavrentiev, V.; Vrnata, M.; Kormunda, M.; Danis, S.

    2016-12-01

    Copper oxide films were prepared by thermal oxidation of thin Cu films deposited on substrates by ion beam sputtering. The subsequent oxidation was achieved in the temperature range of 200 °C-600 °C with time of treatment from 1 to 7 h (with a 1-h step) in a furnace open to air. At temperatures 250 °C-600 °C, the dominant phase formed was CuO, while at 200 °C mainly the Cu2O phase was identified. However, the oxidation at 200 °C led to a more complicated composition - in the depth Cu2O phase was observed, though in the near-surface layer the CuO dominant phase was found with a significant presence of Cu(OH)2. A limited amount of Cu2O was also found in samples annealed at 600 °C. The sheet resistance RS of the as-deposited Cu sample was 2.22 Ω/□, after gradual annealing RS was measured in the range 2.64 MΩ/□-2.45 GΩ/□. The highest RS values were obtained after annealing at 300 °C and 350 °C, respectively. Oxygen depth distribution was studied using the 16O(α,α) nuclear reaction with the resonance at energy 3032 keV. It was confirmed that the higher oxidation degree of copper is located in the near-surface region. Preliminary tests of the copper oxide films as an active layer of a chemiresistor were also performed. Hydrogen and methanol vapours, with a concentration of 1000 ppm, were detected by the sensor at an operating temperature of 300 °C and 350 °C, respectively. The response of the sensors, pointed at the p-type conductivity, was improved by the addition of thin Pd or Au catalytic films to the oxidic film surface. Pd-covered films showed an increased response to hydrogen at 300 °C, while Au-covered films were more sensitive to methanol vapours at 350 °C.

  20. Electrochemical Supercapacitive Performance of Spray-Deposited NiO Electrodes

    Science.gov (United States)

    Yadav, Abhijit A.; Chavan, U. J.

    2018-04-01

    Transition-metal oxides with porous structure are considered for use as promising electrodes for high-performance supercapacitors. Nanocrystalline nickel oxide (NiO) thin films have been prepared as active material for supercapacitors by spray pyrolysis. In this study, the effects of the film thickness on its structural, morphological, optical, electrical, and electrochemical properties were studied. X-ray diffraction analysis revealed cubic structure with average crystalline size of around 21 nm. Scanning electron microscopy showed porous morphology. The optical bandgap decreased from 3.04 eV to 2.97 eV with increase in the film thickness. Electrical resistivity measurements indicated semiconducting behavior. Cyclic voltammetry and galvanostatic charge/discharge study revealed good pseudocapacitive behavior. Specific capacitance of 564 F g-1 at scan rate of 5 mV s-1 and 553 F g-1 at current density of 1 A g-1 was observed. An NiO-based supercapacitor delivered specific energy of 22.8 W h kg-1 at specific power of 2.16 kW kg-1, and retained 93.01% specific capacitance at current density of 1 A g-1 after 1000 cycles. Therefore, taking advantage of the porous morphology that exists in the nanostructure, such NiO materials can be considered for use as promising electrodes for high-performance supercapacitors.

  1. Photocatalysis of zinc oxide nanotip array/titanium oxide film heterojunction prepared by aqueous solution deposition

    Science.gov (United States)

    Lee, Ming-Kwei; Lee, Bo-Wei; Kao, Chen-Yu

    2017-05-01

    A TiO2 film was prepared on indium tin oxide (ITO)/glass by aqueous solution deposition (ASD) with precursors of ammonium hexafluoro-titanate and boric acid at 40 °C. The photocatalysis of annealed TiO2 film increases with increasing growth time and decreases with increasing growth times longer than 60 min. A ZnO nanotip array was prepared on ZnO seed layer/TiO2 film/glass by aqueous solution deposition with precursors of zinc nitrate and ammonium hydroxide at 70 °C. The photocatalysis of ASD-ZnO/ASD-TiO2 film/ITO glass can be better than that of P25.

  2. Preparation of porous titanium oxide films onto indium tin oxide for application in organic photovoltaic devices

    Energy Technology Data Exchange (ETDEWEB)

    Macedo, Andreia G. [Laboratorio de Dispositivos Nanoestruturados, Departamento de Fisica, Universidade Federal do Parana, Curitiba, Parana (Brazil); Mattos, Luana L.; Spada, Edna R.; Serpa, Rafael B.; Campos, Cristiani S. [Laboratorio de Sistemas Nanoestruturados, Departamento de Fisica, Universidade Federal de Santa Catarina, Florianopolis, Santa Catarina (Brazil); Grova, Isabel R.; Ackcelrud, Leni [Laboratorio de Polimeros Paulo Scarpa, Departamento de Quimica, Universidade Federal do Parana, Curitiba, Parana (Brazil); Reis, Francoise T.; Sartorelli, Maria L. [Laboratorio de Sistemas Nanoestruturados, Departamento de Fisica, Universidade Federal de Santa Catarina, Florianopolis, Santa Catarina (Brazil); Roman, Lucimara S., E-mail: lsroman@fisica.ufpr.br [Laboratorio de Dispositivos Nanoestruturados, Departamento de Fisica, Universidade Federal do Parana, Curitiba, Parana (Brazil)

    2012-05-01

    In this work, porous ordered TiO{sub 2} films were prepared through sol gel route by using a monolayer of polystyrene spheres as template on indium-tin oxide/glass substrate. These films were characterized by SEM, AFM, Raman spectroscopy, UV-vis absorbance and XRD. The UV-vis absorbance spectrum show a pseudo band gap (PBG) with maxima at 460 nm arising from the light scattering and partial or total suppression of the photon density of states, this PBG can be controlled by the size of the pore. We also propose the use of this porous film as electron acceptor electrode in organic photovoltaic cells; we show that devices prepared with porous titania displayed higher efficiencies than devices using compact titania films as electrode. Such behaviour was observed in both bilayer and bulk heterojunction devices.

  3. Preparation of porous titanium oxide films onto indium tin oxide for application in organic photovoltaic devices

    International Nuclear Information System (INIS)

    Macedo, Andreia G.; Mattos, Luana L.; Spada, Edna R.; Serpa, Rafael B.; Campos, Cristiani S.; Grova, Isabel R.; Ackcelrud, Leni; Reis, Françoise T.; Sartorelli, Maria L.; Roman, Lucimara S.

    2012-01-01

    In this work, porous ordered TiO 2 films were prepared through sol gel route by using a monolayer of polystyrene spheres as template on indium-tin oxide/glass substrate. These films were characterized by SEM, AFM, Raman spectroscopy, UV-vis absorbance and XRD. The UV-vis absorbance spectrum show a pseudo band gap (PBG) with maxima at 460 nm arising from the light scattering and partial or total suppression of the photon density of states, this PBG can be controlled by the size of the pore. We also propose the use of this porous film as electron acceptor electrode in organic photovoltaic cells; we show that devices prepared with porous titania displayed higher efficiencies than devices using compact titania films as electrode. Such behaviour was observed in both bilayer and bulk heterojunction devices.

  4. Crystal orientation dependent thermoelectric properties of highly oriented aluminum-doped zinc oxide thin films

    KAUST Repository

    Abutaha, Anas I.; Sarath Kumar, S. R.; Alshareef, Husam N.

    2013-01-01

    We demonstrate that the thermoelectric properties of highly oriented Al-doped zinc oxide (AZO) thin films can be improved by controlling their crystal orientation. The crystal orientation of the AZO films was changed by changing the temperature

  5. Intrinsic charge trapping in amorphous oxide films: status and challenges

    Science.gov (United States)

    Strand, Jack; Kaviani, Moloud; Gao, David; El-Sayed, Al-Moatasem; Afanas’ev, Valeri V.; Shluger, Alexander L.

    2018-06-01

    We review the current understanding of intrinsic electron and hole trapping in insulating amorphous oxide films on semiconductor and metal substrates. The experimental and theoretical evidences are provided for the existence of intrinsic deep electron and hole trap states stemming from the disorder of amorphous metal oxide networks. We start from presenting the results for amorphous (a) HfO2, chosen due to the availability of highest purity amorphous films, which is vital for studying their intrinsic electronic properties. Exhaustive photo-depopulation spectroscopy measurements and theoretical calculations using density functional theory shed light on the atomic nature of electronic gap states responsible for deep electron trapping observed in a-HfO2. We review theoretical methods used for creating models of amorphous structures and electronic structure calculations of amorphous oxides and outline some of the challenges in modeling defects in amorphous materials. We then discuss theoretical models of electron polarons and bi-polarons in a-HfO2 and demonstrate that these intrinsic states originate from low-coordinated ions and elongated metal-oxygen bonds in the amorphous oxide network. Similarly, holes can be captured at under-coordinated O sites. We then discuss electron and hole trapping in other amorphous oxides, such as a-SiO2, a-Al2O3, a-TiO2. We propose that the presence of low-coordinated ions in amorphous oxides with electron states of significant p and d character near the conduction band minimum can lead to electron trapping and that deep hole trapping should be common to all amorphous oxides. Finally, we demonstrate that bi-electron trapping in a-HfO2 and a-SiO2 weakens Hf(Si)–O bonds and significantly reduces barriers for forming Frenkel defects, neutral O vacancies and O2‑ ions in these materials. These results should be useful for better understanding of electronic properties and structural evolution of thin amorphous films under carrier injection

  6. Highly conductive grain boundaries in copper oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Deuermeier, Jonas, E-mail: j.deuermeier@campus.fct.unl.pt [Department of Materials Science, Faculty of Science and Technology, i3N/CENIMAT, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica (Portugal); Department of Materials and Earth Sciences, Technische Universität Darmstadt, Jovanka-Bontschits-Straße 2, D-64287 Darmstadt (Germany); Wardenga, Hans F.; Morasch, Jan; Siol, Sebastian; Klein, Andreas, E-mail: aklein@surface.tu-darmstadt.de [Department of Materials and Earth Sciences, Technische Universität Darmstadt, Jovanka-Bontschits-Straße 2, D-64287 Darmstadt (Germany); Nandy, Suman; Calmeiro, Tomás; Martins, Rodrigo; Fortunato, Elvira [Department of Materials Science, Faculty of Science and Technology, i3N/CENIMAT, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica (Portugal)

    2016-06-21

    High conductivity in the off-state and low field-effect mobility compared to bulk properties is widely observed in the p-type thin-film transistors of Cu{sub 2}O, especially when processed at moderate temperature. This work presents results from in situ conductance measurements at thicknesses from sub-nm to around 250 nm with parallel X-ray photoelectron spectroscopy. An enhanced conductivity at low thickness is explained by the occurrence of Cu(II), which is segregated in the grain boundary and locally causes a conductivity similar to CuO, although the surface of the thick film has Cu{sub 2}O stoichiometry. Since grains grow with an increasing film thickness, the effect of an apparent oxygen excess is most pronounced in vicinity to the substrate interface. Electrical properties of Cu{sub 2}O grains are at least partially short-circuited by this effect. The study focuses on properties inherent to copper oxide, although interface effects cannot be ruled out. This non-destructive, bottom-up analysis reveals phenomena which are commonly not observable after device fabrication, but clearly dominate electrical properties of polycrystalline thin films.

  7. Formation and dissolution of the anodic oxide film on zirconium in alcoholic aqueous solutions

    International Nuclear Information System (INIS)

    Mogoda, A.S.

    1995-01-01

    The dissolution behavior of the anodic oxide film formed in alcoholic aqueous solutions was studied. Results indicated the dissolution mechanism of the duplex oxide film followed a zero-order rate equation. The increase in methanol concentration in the formation medium (phosphoric acid [H 3 PO 4 ]) resulted in formation of an oxide film that incorporated little phosphate ion and that dissolved at a low rate. The dissolution rate of the oxide film decreased with increasing methanol concentration in the dissolution medium. This was attributed to the increase in the viscosity of the medium, which led to a decrease in the diffusion coefficient of the dissolution product of the zirconium oxide film. Dissolution of the anodic oxide film also was investigated as a function of the chain length of alcohols

  8. Bismuth-doped La1.75Sr0.25NiO4+: δ as a novel cathode material for solid oxide fuel cells

    NARCIS (Netherlands)

    Zhu, Zhesheng; Li, Mei; Xia, Changrong; Bouwmeester, Henny J.M.

    2017-01-01

    Bismuth has been doped into mixed ionic-electronic conducting La1.75Sr0.25NiO4+δ (LSN) with the 2D K2NiF4-type structure to evaluate its influence on various properties of the host material, which include its potential use as a SOFC cathode. X-ray powder diffraction indicates that LSN retains its

  9. Polarized neutron reflectivity studies of magnetic oxidic Fe3O4/NiO and Fe3O4/CoO multilayers

    NARCIS (Netherlands)

    Ball, A.R.; Fredrikze, H.; Lind, D.M.; Wolf, R.M.; Bloemen, P.J.H.; Rekveldt, M.Th.; Zaag, van der P.J.

    1996-01-01

    The magnetic properties of [1 0 0] oriented Fe3O4/NiO and Fe3O4/CoO multilayers, MBE-grown on MgO(0 0 1) substrates, have been studied by polarized neutron reflectometry. In both samples, the Fe3O4 layer exhibits a depth-dependent magnetic profile characterized by a reduction in the magnetization

  10. Influence of O2 plasma treatment on NiO x layer in perovskite solar cells

    Science.gov (United States)

    Nishihara, Yoshihiko; Chikamatsu, Masayuki; Kazaoui, Said; Miyadera, Tetsuhiko; Yoshida, Yuji

    2018-04-01

    We fabricated perovskite solar cells (PSCs) with an inverted p-i-n planar structure using a NiO x film as a hole-transporting layer. Since the surface of the NiO x film fabricated by sputtering is hydrophobic, O2 plasma treatment under various conditions was performed to improve its wettability. Water contact angles after the treatment under both normal and weak conditions on the NiO x film reached approximately 15°. After the treatment, the valence band level of the NiO x film was deeper by about 0.15 eV. The maximum efficiency of the NiO x -based device under the optimized O2 plasma condition reached 12.3%.

  11. Amorphous Hafnium-Indium-Zinc Oxide Semiconductor Thin Film Transistors

    Directory of Open Access Journals (Sweden)

    Sheng-Po Chang

    2012-01-01

    Full Text Available We reported on the performance and electrical properties of co-sputtering-processed amorphous hafnium-indium-zinc oxide (α-HfIZO thin film transistors (TFTs. Co-sputtering-processed α-HfIZO thin films have shown an amorphous phase in nature. We could modulate the In, Hf, and Zn components by changing the co-sputtering power. Additionally, the chemical composition of α-HfIZO had a significant effect on reliability, hysteresis, field-effect mobility (μFE, carrier concentration, and subthreshold swing (S of the device. Our results indicated that we could successfully and easily fabricate α-HfIZO TFTs with excellent performance by the co-sputtering process. Co-sputtering-processed α-HfIZO TFTs were fabricated with an on/off current ratio of ~106, higher mobility, and a subthreshold slope as steep as 0.55 V/dec.

  12. Observation of the structural, optical and magnetic properties during the transformation from hexagonal NiS nano-compounds to cubic NiO nanostructures due to thermal oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Linganiso, E.C., E-mail: elinganiso@csir.co.za [National Centre for Nano-Structured Materials, Council for Scientific and Industrial Research, P.O. Box 395, Pretoria 0001 (South Africa); DST/NRF Centre of Excellence in Strong Materials, Molecular Sciences Institute, School of Chemistry, University of the Witwatersrand, Private Bag 3, Johannesburg, Wits 2050 (South Africa); Mwakikunga, B.W., E-mail: bmwakikunga@csir.co.za [National Centre for Nano-Structured Materials, Council for Scientific and Industrial Research, P.O. Box 395, Pretoria 0001 (South Africa); Coville, N.J. [DST/NRF Centre of Excellence in Strong Materials, Molecular Sciences Institute, School of Chemistry, University of the Witwatersrand, Private Bag 3, Johannesburg, Wits 2050 (South Africa); Mhlanga, S.D. [Department of Applied Chemistry, University of Johannesburg, PO Box 17011, Doornfontein, 2028 Johannesburg (South Africa)

    2015-04-25

    Graphical abstract: The transition temperature of 350 °C for the formation of c-NiO from h-NiS oxidation was obtained from structural and optical property studies and by calculating the number of spins obtained from the EPR data. Vibrating sample magnetometry (VSM) shows that this pure NiS has both ferromagnetic ordering and paramagnetic domains. Further, the transition temperature of −9 °C of the pure α-NiS nano-alloys was confirmed by performing electrical measurements on the as-synthesized material. - Highlights: • Single hexagonal phase NiS obtained by microwave assisted hydrothermal synthesis. • NiS nanoalloys show both ferromagnetic and paramagnetic domains by VSM. • Structural evolution of annealed NiS and temperature dependent NiS oxidation presented. • Phase transition from NiS to NiO studied and correlated to the EPR spin population data and crystallite size. • Ferromagnetic and paramagnetic ordering observed for the raw NiS nanostructures. - Abstract: Single phase α-NiS nano-compounds with uniformly distributed hierarchical networks were synthesized by a microwave-assisted hydrothermal technique. The materials were evaluated for thermal stability under an oxidative environment and at temperatures between 150 °C and 600 °C. NiS materials showed stability at 300 °C and NiO formation was observed from 350 °C to 600 °C. The annealing effect on the crystalline size and IR absorption of the annealed samples is reported by XRD and FTIR studied. The EPR properties of the annealed materials were studied and compared to the oxidized materials. The transition temperature of 350 °C for the formation of NiO from NiS oxidation was confirmed by calculating the number of spins obtained from the EPR data. Vibrating sample magnetometry (VSM) shows that this pure NiS has both ferromagnetic ordering and paramagnetic domains. Further, the transition temperature of −9 °C of the pure α-NiS nano-compounds was confirmed by performing electrical

  13. Effects of iron content on electrical resistivity of oxide films on Zr-base alloys

    International Nuclear Information System (INIS)

    Kubo, Toshio; Uno, Masayoshi

    1991-01-01

    Measurements of electrical resistivity were made for oxide films formed by anodic oxidation and steam oxidation (400degC/12 h) on Zr plates with different Fe contents. When the Fe content was higher than about 1,000 ppm the electrical resistivity of the steam oxide films was almost equivalent to that of the anodic oxide films, while at lower Fe content the former exhibited lower electrical resistivity than the latter by about 1∼3 orders of magnitude. The anodic oxide film was an almost homogeneous single oxide layer. The steam oxide films, on the other hand, were composed of duplex oxide layers. The oxide layer formed in the vicinity of the oxide/metal interface had higher electrical resistivity than the near-surface oxide layer by about 1∼4 orders of magnitude. The oxide layer in the vicinity of the interface could act as a protective film against corrosion and its electrical resistivity is one important factor controlling the layer protectiveness. The electrical resistivity of the oxide/metal interfacial layer was strongly dependent on the Fe content. One possible reason for Fe to improve the corrosion resistance is that Fe ions would tend to stabilize the tetragonal (or cubic) phase and consequently suppress the formation of open pores and cracks in the interfacial layer. (author)

  14. Electrical behavior of amide functionalized graphene oxide and graphene oxide films annealed at different temperatures

    International Nuclear Information System (INIS)

    Rani, Sumita; Kumar, Mukesh; Kumar, Dinesh; Sharma, Sumit

    2015-01-01

    Films of graphene oxide (GO) and amide functionalized graphene oxides (AGOs) were deposited on SiO 2 /Si(100) by spin coating and were thermally annealed at different temperatures. Sheet resistance of GO and AGOs films was measured using four probe resistivity method. GO an insulator at room temperature, exhibits decrease in sheet resistance with increase in annealing temperature. However, AGOs' low sheet resistance (250.43 Ω) at room temperature further decreases to 39.26 Ω after annealing at 800 °C. It was observed that the sheet resistance of GO was more than AGOs up to 700 °C, but effect was reversed after annealing at higher temperature. At higher annealing temperatures the oxygen functionality reduces in GO and sheet resistance decreases. Sheet resistance was found to be annealing time dependent. Longer duration of annealing at a particular temperature results in decrease of sheet resistance. - Highlights: • Amide functionalized graphene oxides (AGOs) were synthesized at room temperature (RT). • AGO films have low sheet resistance at RT as compared to graphene oxide (GO). • Fast decrease in the sheet resistance of GO with annealing as compared to AGOs • AGOs were found to be highly dispersible in polar solvents

  15. Releasing metal catalysts via phase transition: (NiO)0.05-(SrTi0.8Nb0.2O3)0.95 as a redox stable anode material for solid oxide fuel cells.

    Science.gov (United States)

    Xiao, Guoliang; Wang, Siwei; Lin, Ye; Zhang, Yanxiang; An, Ke; Chen, Fanglin

    2014-11-26

    Donor-doped perovskite-type SrTiO3 experiences stoichiometric changes at high temperatures in different Po2 involving the formation of Sr or Ti-rich impurities. NiO is incorporated into the stoichiometric strontium titanate, SrTi0.8Nb0.2O3-δ (STN), to form an A-site deficient perovskite material, (NiO)0.05-(SrTi0.8Nb0.2O3)0.95 (Ni-STN), for balancing the phase transition. Metallic Ni nanoparticles can be released upon reduction instead of forming undesired secondary phases. This material design introduces a simple catalytic modification method with good compositional control of the ceramic backbones, by which transport property and durability of solid oxide fuel cell anodes are largely determined. Using Ni-STN as anodes for solid oxide fuel cells, enhanced catalytic activity and remarkable stability in redox cycling have been achieved. Electrolyte-supported cells with the cell configuration of Ni-STN-SDC anode, La0.8Sr0.2Ga0.87Mg0.13O3 (LSGM) electrolyte, and La0.6Sr0.4Co0.2Fe0.8O3 (LSCF) cathode produce peak power densities of 612, 794, and 922 mW cm(-2) at 800, 850, and 900 °C, respectively, using H2 as the fuel and air as the oxidant. Minor degradation in fuel cell performance resulted from redox cycling can be recovered upon operating the fuel cells in H2. Such property makes Ni-STN a promising regenerative anode candidate for solid oxide fuel cells.

  16. Effect of hydrogen on stresses in anodic oxide film on titanium

    International Nuclear Information System (INIS)

    Kim, Joong-Do; Pyun, Su-Il; Seo, Masahiro

    2003-01-01

    Stresses in anodic oxide film on titanium thin film/glass electrode in pH 8.4 borate solution were investigated by a bending beam method. The increases in compressive stress observed with cathodic potential sweeps after formation of anodic oxide film were attributed to the volume expansion due to the compositional change of anodic oxide film from TiO 2 to TiO 2-x (OH) x . The instantaneous responses of changes in stress, Δσ, in the anodic oxide film to potential steps demonstrated the reversible characteristic of the TiO 2-x (OH) x formation reaction. In contrast, the transient feature of Δσ for the titanium without anodic oxide film represented the irreversible formation of TiH x at the metal/oxide interphase. The large difference in stress between with and without the oxide film, has suggested that most of stresses generated during the hydrogen absorption/desorption reside in the anodic oxide film. A linear relationship between changes in stress, Δ(Δσ) des , and electric charge, ΔQ des , during hydrogen desorption was found from the current and stress transients, manifesting that the stress changes were crucially determined by the amount of hydrogen desorbed from the oxide film. The increasing tendency of -Δ(Δσ) des with increasing number of potential steps and film formation potential were discussed in connection with the increase in desorption amount of hydrogen in the oxide film with increasing absorption/desorption cycles and oxide film thickness

  17. Electrical and optical performance of transparent conducting oxide films deposited by electrostatic spray assisted vapour deposition.

    Science.gov (United States)

    Hou, Xianghui; Choy, Kwang-Leong; Liu, Jun-Peng

    2011-09-01

    Transparent conducting oxide (TCO) films have the remarkable combination of high electrical conductivity and optical transparency. There is always a strong motivation to produce TCO films with good performance at low cost. Electrostatic Spray Assisted Vapor Deposition (ESAVD), as a variant of chemical vapour deposition (CVD), is a non-vacuum and low-cost deposition method. Several types of TCO films have been deposited using ESAVD process, including indium tin oxide (ITO), antimony-doped tin oxide (ATO), and fluorine doped tin oxide (FTO). This paper reports the electrical and optical properties of TCO films produced by ESAVD methods, as well as the effects of post treatment by plasma hydrogenation on these TCO films. The possible mechanisms involved during plasma hydrogenation of TCO films are also discussed. Reduction and etching effect during plasma hydrogenation are the most important factors which determine the optical and electrical performance of TCO films.

  18. Nanoscale reduction of graphene oxide thin films and its characterization.

    Science.gov (United States)

    Lorenzoni, M; Giugni, A; Di Fabrizio, E; Pérez-Murano, Francesc; Mescola, A; Torre, B

    2015-07-17

    In this paper, we report on a method to reduce thin films of graphene oxide (GO) to a spatial resolution better than 100 nm over several tens of micrometers by means of an electrochemical scanning probe based lithography. In situ tip-current measurements show that an edged drop in electrical resistance characterizes the reduced areas, and that the reduction process is, to a good approximation, proportional to the applied bias between the onset voltage and the saturation thresholds. An atomic force microscope (AFM) quantifies the drop of the surface height for the reduced profile due to the loss of oxygen. Complementarily, lateral force microscopy reveals a homogeneous friction coefficient of the reduced regions that is remarkably lower than that of native graphene oxide, confirming a chemical change in the patterned region. Micro Raman spectroscopy, which provides access to insights into the chemical process, allows one to quantify the restoration and de-oxidation of the graphitic network driven by the electrochemical reduction and to determine characteristic length scales. It also confirms the homogeneity of the process over wide areas. The results shown were obtained from accurate analysis of the shift, intensity and width of Raman peaks for the main vibrational bands of GO and reduced graphene oxide (rGO) mapped over large areas. Concerning multilayered GO thin films obtained by drop-casting we have demonstrated an unprecedented lateral resolution in ambient conditions as well as an improved control, characterization and understanding of the reduction process occurring in GO randomly folded multilayers, useful for large-scale processing of graphene-based material.

  19. Nanoscale reduction of graphene oxide thin films and its characterization

    KAUST Repository

    Lorenzoni, M.

    2015-06-29

    In this paper, we report on a method to reduce thin films of graphene oxide (GO) to a spatial resolution better than 100 nm over several tens of micrometers by means of an electrochemical scanning probe based lithography. In situ tip-current measurements show that an edged drop in electrical resistance characterizes the reduced areas, and that the reduction process is, to a good approximation, proportional to the applied bias between the onset voltage and the saturation thresholds. An atomic force microscope (AFM) quantifies the drop of the surface height for the reduced profile due to the loss of oxygen. Complementarily, lateral force microscopy reveals a homogeneous friction coefficient of the reduced regions that is remarkably lower than that of native graphene oxide, confirming a chemical change in the patterned region. Micro Raman spectroscopy, which provides access to insights into the chemical process, allows one to quantify the restoration and de-oxidation of the graphitic network driven by the electrochemical reduction and to determine characteristic length scales. It also confirms the homogeneity of the process over wide areas. The results shown were obtained from accurate analysis of the shift, intensity and width of Raman peaks for the main vibrational bands of GO and reduced graphene oxide (rGO) mapped over large areas. Concerning multilayered GO thin films obtained by drop-casting we have demonstrated an unprecedented lateral resolution in ambient conditions as well as an improved control, characterization and understanding of the reduction process occurring in GO randomly folded multilayers, useful for large-scale processing of graphene-based material. © 2015 IOP Publishing Ltd.

  20. Friction behaviour of anodic oxide film on aluminum impregnated with molybdenum sulfide compounds

    Energy Technology Data Exchange (ETDEWEB)

    Maejima, M.; Saruwatari, K. [Fujikura Ltd., Tokyo (Japan); Takaya, M. [Faculty of Engineering, Chiba Institute of Technology 17-1, Tsudanuma 2-Chome, 275-0016, Narasino-shi Chiba (Japan)

    2000-10-23

    In order to improve the lubricity and wear resistance of aluminum anodic oxide films, it is necessary to ensure the film layers are dense to prevent cracking, and to harden the films as well as reduce the shear stress of the film surfaces. From this view point, lubricious, hard anodic oxide films have been studied in the past, but fully satisfactory results have yet to be realized. In this paper, we report on our study of the re-anodizing of anodic oxide film in an aqueous solution of (NH)MoS. Molybdenum sulfide and compounds filled the 20-nm diameter pores of the film, creating internal stress which compressed the film, suppressing the occurrence of cracks and reducing the friction coefficient. (orig.)

  1. Amorphous Zinc Oxide Integrated Wavy Channel Thin Film Transistor Based High Performance Digital Circuits

    KAUST Repository

    Hanna, Amir; Hussain, Aftab M.; Omran, Hesham; Alshareef, Sarah; Salama, Khaled N.; Hussain, Muhammad Mustafa

    2015-01-01

    High performance thin film transistor (TFT) can be a great driving force for display, sensor/actuator, integrated electronics, and distributed computation for Internet of Everything applications. While semiconducting oxides like zinc oxide (Zn

  2. Intrinsic stress of bismuth oxide thin films: effect of vapour chopping and air ageing

    International Nuclear Information System (INIS)

    Patil, R B; Puri, R K; Puri, V

    2008-01-01

    Bismuth oxide thin films of thickness 1000 A 0 have been prepared by thermal oxidation (in air) of vacuum evaporated bismuth thin films (on glass substrate) at different oxidation temperatures and duration. Both the vapour chopped and nonchopped bismuth oxide thin films showed polycrystalline and polymorphic structure. The monoclinic bismuth oxide was found to be predominant in both the cases. The effect of vapour chopping and air exposure for 40 days on the intrinsic stress of bismuth oxide thin films has been studied. The vapour chopped films showed low (3.92 - 4.80 x 10 9 N/m 2 ) intrinsic stress than those of nonchopped bismuth oxide thin films (5.77 - 6.74 x 10 9 N/m 2 ). Intrinsic stress was found to increase due to air ageing. The effect of air ageing on the vapour chopped films was found low. The vapour chopped films showed higher packing density. Higher the packing density, lower the film will age. The process of chopping vapour flow creates films with less inhomogenety i.e. a low concentration of flaws and non-planar defects which results in lower intrinsic stress

  3. Thermally evaporated mechanically hard tin oxide thin films for opto-electronic apllications

    International Nuclear Information System (INIS)

    Tripathy, Sumanta K.; Rajeswari, V. P.

    2014-01-01

    Tungsten doped tin oxide (WTO) and Molybdenum doped tin oxide (MoTO) thin film were deposited on corn glass by thermal evaporation method. The films were annealed at 350°C for one hour. Structural analysis using Xray diffraction data shows both the films are polycrystalline in nature with monoclinic structure of tin oxide, Sn 3 O 4 , corresponding to JCPDS card number 01-078-6064. SEM photograph showed that both the films have spherical grains with size in the range of 20–30 nm. Compositional analysis was carried out using EDS which reveals the presence of Sn, O and the dopant Mo/W only thereby indicating the absence of any secondary phase in the films. The films are found to contain nearly 6 wt% of Mo, 8 wt% of W as dopants respectively. The transmission pattern for both the films in the spectral range 200 – 2000 nm shows that W doping gives a transparency of nearly 80% from 380 nm onwards while Mo doping has less transparency of 39% at 380nm. Film hardness measurement using Triboscope shows a film hardness of about 9–10 GPa for both the films. It indicates that W or M doping in tin oxide provides the films the added advantage of withstanding the mechanical wear and tear due to environmental fluctuations By optimizing the optical and electrical properties, W/Mo doped tin oxide films may be explored as window layers in opto-electronic applications such as solar cells

  4. Synthesis of electro-active manganese oxide thin films by plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Merritt, Anna R. [Energetics Research Division, Naval Air Warfare Center Weapons Division, China Lake, CA 93555 (United States); Rajagopalan, Ramakrishnan [Department of Engineering, The Pennsylvania State University, Dubois, PA 15801 (United States); Materials Research Institute, The Pennsylvania State University, University Park, PA 16802 (United States); Carter, Joshua D. [Energetics Research Division, Naval Air Warfare Center Weapons Division, China Lake, CA 93555 (United States)

    2014-04-01

    The good stability, cyclability and high specific capacitance of manganese oxide (MnO{sub x}) has recently promoted a growing interest in utilizing MnO{sub x} in asymmetric supercapacitor electrodes. Several literature reports have indicated that thin film geometries of MnO{sub x} provide specific capacitances that are much higher than bulk MnO{sub x} powders. Plasma enhanced chemical vapor deposition (PECVD) is a versatile technique for the production of metal oxide thin films with high purity and controllable thickness. In this work, MnO{sub x} thin films deposited by PECVD from a methylcyclopentadienyl manganese tricarbonyl precursor are presented and the effect of processing conditions on the quality of MnO{sub x} films is described. The film purity and oxidation state of the MnO{sub x} films were studied by Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. Preliminary electrochemical testing of MnO{sub x} films deposited on carbon fiber electrodes in aqueous electrolytes indicates that the PECVD synthesized films are electrochemically active. - Highlights: • Plasma enhanced chemical vapor deposition of manganese oxide thin films. • Higher plasma power and chamber pressure increase deposition rate. • Manganese oxide thin films are electrochemically active. • Best electrochemical performance observed for pure film with low stress • Lower capacitance observed at higher scan rates despite thin film geometry.

  5. Polycrystalline oxides formation during transient oxidation of (001) Cu-Ni binary alloys studied by in situ TEM and XRD

    International Nuclear Information System (INIS)

    Yang, J.C.; Li, Z.Q.; Sun, L.; Zhou, G.W.; Eastman, J.A.; Fong, D.D.; Fuoss, P.H.; Baldo, P.M.; Rehn, L.E.; Thompson, L.J.

    2009-01-01

    The nucleation and growth of Cu 2 O and NiO islands due to oxidation of Cu x Ni 1-x (001) films were monitored, at various temperatures, by in situ ultra-high vacuum (UHV) transmission electron microscopy (TEM) and in situ synchrotron X-ray diffraction (XRD). In remarkable contrast to our previous observations of Cu and Cu-Au oxidation, irregular-shaped polycrystalline oxide islands formed with respect to the Cu-Ni alloy film, and an unusual second oxide nucleation stage was noted. In situ XRD experiments revealed that NiO formed first epitaxially, then other orientations appeared, and finally polycrystalline Cu 2 O developed as the oxidation pressure was increased. The segregation of Ni and Cu towards or away, respectively, from the alloy surface during oxidation could disrupt the surface and cause polycrystalline oxide formation.

  6. Amorphous semiconducting and conducting transparent metal oxide thin films and production thereof

    Science.gov (United States)

    Perkins, John; Van Hest, Marinus Franciscus Antonius Maria; Ginley, David; Taylor, Matthew; Neuman, George A.; Luten, Henry A.; Forgette, Jeffrey A.; Anderson, John S.

    2010-07-13

    Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.

  7. Spray Pyrolyzed Polycrystalline Tin Oxide Thin Film as Hydrogen Sensor

    Directory of Open Access Journals (Sweden)

    Ganesh E. Patil

    2010-09-01

    Full Text Available Polycrystalline tin oxide (SnO2 thin film was prepared by using simple and inexpensive spray pyrolysis technique (SPT. The film was characterized for their phase and morphology by X-ray diffraction (XRD and scanning electron microscopy (SEM, respectively. The crystallite size calculated from the XRD pattern is 84 nm. Conductance responses of the polycrystalline SnO2 were measured towards gases like hydrogen (H2, liquefied petroleum gas (LPG, ethanol vapors (C2H5OH, NH3, CO, CO2, Cl2 and O2. The gas sensing characteristics were obtained by measuring the sensor response as a function of various controlling factors like operating temperature, operating voltages (1 V, 5 V, 10 V 15 V, 20 V and 25 V and concentration of gases. The sensor response measurement showed that the SnO2 has maximum response to hydrogen. Furthermore; the SnO2 based sensor exhibited fast response and good recovery towards hydrogen at temperature 150 oC. The result of response towards H2 reveals that SnO2 thin film prepared by SPT would be a suitable material for the fabrication of the hydrogen sensor.

  8. Electrochromic Devices Based on Porous Tungsten Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Y. Djaoued

    2012-01-01

    Full Text Available Recent developments in the synthesis of transition metal oxides in the form of porous thin films have opened up opportunities in the construction of electrochromic devices with enhanced properties. In this paper, synthesis, characterization and electrochromic applications of porous WO3 thin films with different nanocrystalline phases, such as hexagonal, monoclinic, and orthorhombic, are presented. Asymmetric electrochromic devices have been constructed based on these porous WO3 thin films. XRD measurements of the intercalation/deintercalation of Li+ into/from the WO3 layer of the device as a function of applied coloration/bleaching voltages show systematic changes in the lattice parameters associated with structural phase transitions in LixWO3. Micro-Raman studies show systematic crystalline phase changes in the spectra of WO3 layers during Li+ ion intercalation and deintercalation, which agree with the XRD data. These devices exhibit interesting optical modulation (up to ~70% due to intercalation/deintercalation of Li ions into/from the WO3 layer of the devices as a function of applied coloration/bleaching voltages. The obtained optical modulation of the electrochromic devices indicates that, they are suitable for applications in electrochromic smart windows.

  9. Chemical vapour deposition of vanadium oxide thermochromic thin films

    Science.gov (United States)

    Piccirillo, Clara

    Thermochromic materials change optical properties, such as transmittance or reflectance, with a variation in temperature. An ideal intelligent (smart) material will allow solar radiation in through a window in cold conditions, but reflect that radiation in warmer conditions. The variation in the properties is often associated with a phase change, which takes place at a definite temperature, and is normally reversible. Such materials are usually applied to window glass as thin films. This thesis presents the work on the development of thermochromic vanadium (IV) oxide (VO2) thin films - both undoped and doped with tungsten, niobium and gold nanoparticles - which could be employed as solar control coatings. The films were deposited using Chemical Vapour Deposition (CVD), using improved Atmospheric Pressure (APCVD), novel Aerosol Assisted (AACVD) and novel hybrid AP/AACVD techniques. The effects of dopants on the metalto- semiconductor transition temperature and transmittance/reflectance characteristics were also investigated. This work significantly increased the understanding of the mechanisms behind thermochromic behaviour, and resulted in thermochromic materials based on VO2 with greatly improved properties.

  10. Interfacial Shear Strength of Multilayer Graphene Oxide Films.

    Science.gov (United States)

    Daly, Matthew; Cao, Changhong; Sun, Hao; Sun, Yu; Filleter, Tobin; Singh, Chandra Veer

    2016-02-23

    Graphene oxide (GO) is considered as one of the most promising layered materials with tunable physical properties and applicability in many important engineering applications. In this work, the interfacial behavior of multilayer GO films was directly investigated via GO-to-GO friction force microscopy, and the interfacial shear strength (ISS) was measured to be 5.3 ± 3.2 MPa. Based on high resolution atomic force microscopy images and the available chemical data, targeted molecular dynamics simulations were performed to evaluate the influence of functional structure, topological defects, and interlayer registry on the shear response of the GO films. Theoretical values for shear strength ranging from 17 to 132 MPa were predicted for the different structures studied, providing upper bounds for the ISS. Computational results also revealed the atomic origins of the stochastic nature of friction measurements. Specifically, the wide scatter in experimental measurements was attributed to variations in functional structure and topological defects within the sliding volume. The findings of this study provide important insight for understanding the significant differences in strength between monolayer and bulk graphene oxide materials and can be useful for engineering topological structures with tunable mechanical properties.

  11. Electrical and optical properties of amorphous indium zinc oxide films

    International Nuclear Information System (INIS)

    Ito, N.; Sato, Y.; Song, P.K.; Kaijio, A.; Inoue, K.; Shigesato, Y.

    2006-01-01

    Valence electron control and electron transport mechanisms on the amorphous indium zinc oxide (IZO) films were investigated. The amorphous IZO films were deposited by dc magnetron sputtering using an oxide ceramic IZO target (89.3 wt.% In 2 O 3 and 10.7 wt.% ZnO). N-type impurity dopings, such as Sn, Al or F, could not lead to the increase in carrier density in the IZO. Whereas, H 2 introduction into the IZO deposition process was confirmed to be effective to increase carrier density. By 30% H 2 introduction into the deposition process, carrier density increased from 3.08 x 10 2 to 7.65 x 10 2 cm -3 , which must be originated in generations of oxygen vacancies or interstitial Zn 2+ ions. Decrease in the transmittance in the near infrared region and increase in the optical band gap were observed with the H 2 introduction, which corresponded to the increase in carrier density. The lowest resistivity of 3.39 x 10 -4 Ω cm was obtained by 10% H 2 introduction without substrate heating during the deposition

  12. Characterization for rbs of Titanium Oxide thin films grown by Dip Coating in a coloidal suspension of nano structured Titanium Oxide

    International Nuclear Information System (INIS)

    Pedrero, E.; Vigil, E.; Zumeta, I.

    1999-01-01

    The depth of Titanium Oxide thin films grown by Dip Coating in a coloidal suspension of nano structured Titanium Oxide was characterized using Rutherford Backscattering Spectrometry. Film depths are compared in function of bath and suspension parameters

  13. Amperometric detection and electrochemical oxidation of aliphatic amines and ammonia on silver-lead oxide thin-film electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Ge, Jisheng [Iowa State Univ., Ames, IA (United States)

    1996-01-08

    This thesis comprises three parts: Electrocatalysis of anodic oxygen-transfer reactions: aliphatic amines at mixed Ag-Pb oxide thin-film electrodes; oxidation of ammonia at anodized Ag-Pb eutectic alloy electrodes; and temperature effects on oxidation of ethylamine, alanine, and aquated ammonia.

  14. Cuprous oxide thin films prepared by thermal oxidation of copper layer. Morphological and optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Karapetyan, Artak, E-mail: karapetyan@cinam.univ-mrs.fr [Aix Marseille Université, CINaM, 13288, Marseille (France); Institute for Physical Research of NAS of Armenia, Ashtarak-2 0203 (Armenia); Reymers, Anna [Russian-Armenian (Slavonic) University, H.Emin st.123, Yerevan 375051 (Armenia); Giorgio, Suzanne; Fauquet, Carole [Aix Marseille Université, CINaM, 13288, Marseille (France); Sajti, Laszlo [Laser Zentrum Hannover e.V. Hollerithallee 8, 30419 Hannover (Germany); Nitsche, Serge [Aix Marseille Université, CINaM, 13288, Marseille (France); Nersesyan, Manuk; Gevorgyan, Vladimir [Russian-Armenian (Slavonic) University, H.Emin st.123, Yerevan 375051 (Armenia); Marine, Wladimir [Aix Marseille Université, CINaM, 13288, Marseille (France)

    2015-03-15

    Structural and optical characterization of crystalline Cu{sub 2}O thin films obtained by thermal oxidation of Cu films at two different temperatures 800 °C and 900 °C are investigated in this work. X-ray diffraction measurements indicate that synthesized films consist of single Cu{sub 2}O phase without any interstitial phase and show a nano-grain structure. Scanning Electron Microscopy observations indicate that the Cu{sub 2}O films have a micro-scale roughness whereas High Resolution Transmission Electron Microscopy highlights that the nanocrystalline structure is formed by superposition of nearly spherical nanocrystals smaller than 30 nm. Photoluminescence spectra of these films exhibit at room temperature two well-resolved emission peaks at 1.34 eV due to defects energy levels and at 1.97 eV due to phonon-assisted recombination of the 1s orthoexciton in both film series. Emission characteristics depending on the laser power is deeply investigated to determine the origin of recorded emissions. Time-integrated spectra of the 1s orthoexciton emission reveals the presence of oxygen defects below the conduction band edge under non-resonant two-photon excitation using a wide range of excitations wavelengths. Optical absorption coefficients at room temperature are obtained from an accurate analysis of their transmission and reflection spectra, whereas the optical band gap energy is estimated at about 2.11 eV. Results obtained are of high relevance especially for potential applications in semiconductor devices such as solar cells, optical sources and detectors. - Highlights: • Nanostructured Cu{sub 2}O thin films were synthesized by thermal oxidation of Cu films. • The PL spectra of nanostructured thin films revealed two well-resolved emission peaks. • The PL properties were investigated under a broad range of experimental conditions. • Inter-band transition in the infrared range has been associated to V{sub Cu} and V{sub O} vacancies. • Absorption

  15. Modification of oxide films by ion implantation: TiO2-films modified by Ti+ and O+ as example

    International Nuclear Information System (INIS)

    Schultze, J.W.; Elfenthal, L.; Leitner, K.; Meyer, O.

    1988-01-01

    Oxide films can be modified by ion implantation. Changes in the electrochemical properties of the films are due to the deposition profile of the implanted ion, ie doping and stoichiometric changes, as well as to the radiation damage. The latter is due to the formation of Frenkel defects and at high concentrations to a complete amorphization of the oxide film. TiOsub(x)-films with 1 + - and O + -ions into anodic oxide films on titanium. The electrode capacity shows always the behaviour of an n-type semiconductor with an almost constant flatband potential but a strong maximum donor concentration at about 3% Ti + concentration. Oxygen implantation, on the other hand, causes a small increase of donor concentration only at high concentration of O + . Electron transfer reactions show strong modifications of the electronic behaviour of the oxide film with a maximum again at 3% titanium. Photocurrent spectra prove the increasing amorphization and show interband states 2.6 eV above the VB or below the CB. During repassivation measurements at various potentials different defects formed by Ti + - and O + -implantation become mobile. A tentative model of the band structure is constructed which takes into account the interband states due to localised Ti + - and O + -ions. The modification of ion implanted oxide films is compared with the effects of other preparation techniques. (author)

  16. Oxidation mechanism of nickel particles studied in an environmental transmission electron microscope

    DEFF Research Database (Denmark)

    Jeangros, Q.; Hansen, Thomas Willum; Wagner, Jakob Birkedal

    2014-01-01

    The oxidation of nickel particles was studied in situ in an environmental transmission electron microscope in 3.2 mbar of O2 between ambient temperature and 600°C. Several different transmission electron microscopy imaging techniques, electron diffraction and electron energy-loss spectroscopy were...... diffusion of Ni2+ along NiO grain boundaries, self-diffusion of Ni2+ ions and vacancies, growth of NiO grains and nucleation of voids at Ni/NiO interfaces. We also observed the formation of transverse cracks in a growing NiO film in situ in the electron microscope....

  17. Solution processed metal oxide thin film hole transport layers for high performance organic solar cells

    Science.gov (United States)

    Steirer, K. Xerxes; Berry, Joseph J.; Chesin, Jordan P.; Lloyd, Matthew T.; Widjonarko, Nicodemus Edwin; Miedaner, Alexander; Curtis, Calvin J.; Ginley, David S.; Olson, Dana C.

    2017-01-10

    A method for the application of solution processed metal oxide hole transport layers in organic photovoltaic devices and related organic electronics devices is disclosed. The metal oxide may be derived from a metal-organic precursor enabling solution processing of an amorphous, p-type metal oxide. An organic photovoltaic device having solution processed, metal oxide, thin-film hole transport layer.

  18. Comment on "Tunable Design of Structural Colors Produced by Pseudo-1D Photonic Crystals of Graphene Oxide" and Thin-Film Interference from Dried Graphene Oxide Film.

    Science.gov (United States)

    Hong, Seung-Ho; Song, Jang-Kun

    2017-04-01

    The mechanism of the iridescent color reflection from dried thin graphene oxide (GO) film on Si wafer is clarified. Dissimilarly to the photonic crystalline reflection in aqueous GO dispersion, the color reflection in dried GO film originates from the thin film interference. The peak reflection can reach 23% by optimizing the GO thickness and the substrate. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Flexible Electronics Powered by Mixed Metal Oxide Thin Film Transistors

    Science.gov (United States)

    Marrs, Michael

    A low temperature amorphous oxide thin film transistor (TFT) and amorphous silicon PIN diode backplane technology for large area flexible digital x-ray detectors has been developed to create 7.9-in. diagonal backplanes. The critical steps in the evolution of the backplane process include the qualification and optimization of the low temperature (200 °C) metal oxide TFT and a-Si PIN photodiode process, the stability of the devices under forward and reverse bias stress, the transfer of the process to flexible plastic substrates, and the fabrication and assembly of the flexible detectors. Mixed oxide semiconductor TFTs on flexible plastic substrates suffer from performance and stability issues related to the maximum processing temperature limitation of the polymer. A novel device architecture based upon a dual active layer improves both the performance and stability. Devices are directly fabricated below 200 ºC on a polyethylene naphthalate (PEN) substrate using mixed metal oxides of either zinc indium oxide (ZIO) or indium gallium zinc oxide (IGZO) as the active semiconductor. The dual active layer architecture allows for adjustment to the saturation mobility and threshold voltage stability without the requirement of high temperature annealing, which is not compatible with flexible plastic substrates like PEN. The device performance and stability is strongly dependent upon the composition of the mixed metal oxide; this dependency provides a simple route to improving the threshold voltage stability and drive performance. By switching from a single to a dual active layer, the saturation mobility increases from 1.2 cm2/V-s to 18.0 cm2/V-s, while the rate of the threshold voltage shift decreases by an order of magnitude. This approach could assist in enabling the production of devices on flexible substrates using amorphous oxide semiconductors. Low temperature (200°C) processed amorphous silicon photodiodes were developed successfully by balancing the tradeoffs

  20. On the oxidation mechanism of microcrystalline silicon thin films studied by Fourier transform infrared spectroscopy

    NARCIS (Netherlands)

    Bronneberg, A. C.; Smets, A. H. M.; Creatore, M.; M. C. M. van de Sanden,

    2011-01-01

    Insight into the oxidation mechanism of microcrystalline silicon thin films has been obtained by means of Fourier transform infrared spectroscopy. The films were deposited by using the expanding thermal plasma and their oxidation upon air exposure was followed in time. Transmission spectra were

  1. Effect of micro-patterned fluorine-doped tin oxide films on electrochromic properties of Prussian blue films

    International Nuclear Information System (INIS)

    Lee, Kyuha; Kim, A-Young; Park, Ji Hun; Jung, Hun-Gi; Choi, Wonchang; Lee, Hwa Young; Lee, Joong Kee

    2014-01-01

    Graphical abstract: - Highlights: • PB-based ECD employed micro-patterned FTO electrode was fabricated. • Effect of interface morphology on electrochromic characteristics was examined. • Electrochromic properties were enhanced by employing a patterned interface. - Abstract: The effect of interface morphology on electrochromic characteristics was examined for an electrochromic device (ECD). Micro-patterned fluorine-doped tin oxide (FTO) films were fabricated using a photolithography process. Prussian blue (PB) films were then deposited on the patterned FTO films. The surface areas of both PB films and FTO films were increased by patterning. ECDs were assembled using patterned PB/FTO films as the electrochromic electrode, bare FTO films as the counter electrode, and an electrolyte containing LiClO 4 salt. The increased effective surface area of the patterned PB/FTO electrode boosted the mobility of ions at the interphase between the electrolyte and PB electrode, and the electron transfer between PB films and FTO films. As a result, electrochromic properties such as transmittance and response time were significantly improved by employing the patterned FTO films as the transparent conductive oxide layer of the electrochromic electrode

  2. Effect of micro-patterned fluorine-doped tin oxide films on electrochromic properties of Prussian blue films

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Kyuha [Center for Energy Convergence Research, Green City Technology Institute, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136-791 (Korea, Republic of); Kim, A-Young [Center for Energy Convergence Research, Green City Technology Institute, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136-791 (Korea, Republic of); Department of Material Science and Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Park, Ji Hun; Jung, Hun-Gi; Choi, Wonchang; Lee, Hwa Young [Center for Energy Convergence Research, Green City Technology Institute, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136-791 (Korea, Republic of); Lee, Joong Kee, E-mail: leejk@kist.re.kr [Center for Energy Convergence Research, Green City Technology Institute, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136-791 (Korea, Republic of)

    2014-09-15

    Graphical abstract: - Highlights: • PB-based ECD employed micro-patterned FTO electrode was fabricated. • Effect of interface morphology on electrochromic characteristics was examined. • Electrochromic properties were enhanced by employing a patterned interface. - Abstract: The effect of interface morphology on electrochromic characteristics was examined for an electrochromic device (ECD). Micro-patterned fluorine-doped tin oxide (FTO) films were fabricated using a photolithography process. Prussian blue (PB) films were then deposited on the patterned FTO films. The surface areas of both PB films and FTO films were increased by patterning. ECDs were assembled using patterned PB/FTO films as the electrochromic electrode, bare FTO films as the counter electrode, and an electrolyte containing LiClO{sub 4} salt. The increased effective surface area of the patterned PB/FTO electrode boosted the mobility of ions at the interphase between the electrolyte and PB electrode, and the electron transfer between PB films and FTO films. As a result, electrochromic properties such as transmittance and response time were significantly improved by employing the patterned FTO films as the transparent conductive oxide layer of the electrochromic electrode.

  3. Influence of indium doping on the properties of zinc tin oxide films and its application to transparent thin film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Mu Hee; Ma, Tae Young, E-mail: tyma@gnu.ac.kr

    2014-01-01

    In this study, the effects of indium (In) doping on the properties of zinc tin oxide (ZTO) films are reported. ZTO films were prepared by RF magnetron sputtering followed by In layer deposition, for use as the diffusion source. In order to protect the In layer from peeling, a second ZTO film was deposited on the In film. The annealing at 400 °C for 30 min was carried out to diffuse In atoms into the ZTO films. The structural, optical, and elemental properties of the annealed ZTO/In/ZTO films were investigated by X-ray diffraction, UV/vis spectrophotometry, and X-ray photoluminescence spectroscopy, respectively. The ZTO transparent thin film transistors employing the ZTO/In/ZTO films as the source/drain were prepared, and the effects of the In doped source/drain on the threshold voltage and mobility were characterized and analyzed. - Highlights: • We successfully doped zinc tin oxide (ZTO) films using In as a diffusion source. • Indium (In) was diffused in both directions with the diffusion coefficient of ∼ 4.3 × 10{sup −16} cm{sup 2}/s. • The mobility of ZTO thin film transistor was increased 1.6-times by adopting the In-diffused source/drain.

  4. A nanogravimmetric investigation of the charging processes on ruthenium oxide thin films and their effect on methanol oxidation

    International Nuclear Information System (INIS)

    Santos, M.C.; Cogo, L.; Tanimoto, S.T.; Calegaro, M.L.; Bulhoes, L.O.S

    2006-01-01

    The charging processes and methanol oxidation that occur during the oxidation-reduction cycles in a ruthenium oxide thin film electrode (deposited by the sol-gel method on Pt covered quartz crystals) were investigated by using cyclic voltammetry, chronoamperometry and electrochemical quartz crystal nanobalance techniques. The ruthenium oxide rutile phase structure was determined by X-ray diffraction analysis. The results obtained during the charging of rutile ruthenium oxide films indicate that in the anodic sweep the transition from Ru(II) to Ru(VI) occurs followed by proton de-intercalation. In the cathodic sweep, electron injection occurs followed by proton intercalation, leading to Ru(II). The proton intercalation/de-intercalation processes can be inferred from the mass/charge relationship which gives a slope close to 1 g mol -1 (multiplied by the Faraday constant) corresponding to the molar mass of hydrogen. From the chronoamperometric measurements, charge and mass saturation of the RuO 2 thin films was observed (440 ng cm -2 ) during the charging processes, which is related to the total number of active sites in these films. Using the electrochemical quartz crystal nanobalance technique to study the methanol oxidation reaction at these films was possible to demonstrate that bulk oxidation occurs without the formation of strongly adsorbed intermediates such as CO ads , demonstrating that Pt electrodes modified by ruthenium oxide particles can be promising catalysts for the methanol oxidation as already shown in the literature

  5. Semiconducting properties of oxide and passive films formed on AISI 304 stainless steel and Alloy 600

    Directory of Open Access Journals (Sweden)

    Ferreira M. G. S.

    2002-01-01

    Full Text Available The semiconducting properties of passive films formed on AISI 304 stainless steel and Alloy 600 in borate buffer solution were studied by capacitance (Mott-Schottky approach and photocurrent measurements. Oxide films formed on 304 stainless steel in air at 350 ºC have also been studied. The results obtained show that, in all cases the electronic structure of the films is comparable to that of a p-n heterojunction in which the space charges developed at the metal-film and film-electrolyte interfaces have also to be considered. This is in accordance with analytical results showing that the oxide films are in all cases composed of an inner region rich in chromium oxide and an outer region rich in iron oxide.

  6. Effects of oxygen gas pressure on properties of iron oxide films grown by pulsed laser deposition

    International Nuclear Information System (INIS)

    Guo, Qixin; Shi, Wangzhou; Liu, Feng; Arita, Makoto; Ikoma, Yoshifumi; Saito, Katsuhiko; Tanaka, Tooru; Nishio, Mitsuhiro

    2013-01-01

    Highlights: ► Pulsed laser deposition is a promising technique for growing iron oxide films. ► Crystal structure of the iron oxide films strongly depends on oxygen gas pressure. ► Optimum of the oxygen gas pressure leads single phase magnetite films with high crystal quality. -- Abstract: Iron oxide films were grown on sapphire substrates by pulsed laser deposition at oxygen gas pressures between 1 × 10 −5 and 1 × 10 −1 Pa with a substrate temperature of 600 °C. Atomic force microscope, X-ray diffraction, Raman spectroscopy, X-ray absorption fine structure, and vibrational sample magnetometer analysis revealed that surface morphology and crystal structure of the iron oxide films strongly depend on the oxygen gas pressure during the growth and the optimum oxygen gas pressure range is very narrow around 1 × 10 −3 Pa for obtaining single phase magnetite films with high crystal quality

  7. Local electrical properties of thermally grown oxide films formed on duplex stainless steel surfaces

    Science.gov (United States)

    Guo, L. Q.; Yang, B. J.; He, J. Y.; Qiao, L. J.

    2018-06-01

    The local electrical properties of thermally grown oxide films formed on ferrite and austenite surfaces of duplex stainless steel at different temperatures were investigated by Current sensing atomic force microscopy, X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). The current maps and XPS/AES analyses show that the oxide films covering austenite and ferrite surfaces formed at different temperatures exhibit different local electrical characteristics, thickness and composition. The dependence of electrical conductivity of oxide films covering austenite and ferrite surface on the formation temperature is attributed to the film thickness and semiconducting structures, which is intrinsically related to thermodynamics and kinetics process of film grown at different temperature. This is well elucidated by corresponding semiconductor band structures of oxide films formed on austenite and ferrite phases at different temperature.

  8. FIB-SEM investigation of trapped intermetallic particles in anodic oxide films on AA1050 aluminium

    DEFF Research Database (Denmark)

    Jariyaboon, Manthana; Møller, Per; Dunin-Borkowski, Rafal E.

    2011-01-01

    -containing intermetallic particles incorporated into the anodic oxide films on industrially pure aluminium (AA1050, 99.5 per cent) has been investigated. AA1050 aluminium was anodized in a 100?ml/l sulphuric acid bath with an applied voltage of 14?V at 20°C ±2°C for 10 or 120?min. The anodic film subsequently was analyzed......Purpose - The purpose of this investigation is to understand the structure of trapped intermetallics particles and localized composition changes in the anodized anodic oxide film on AA1050 aluminium substrates. Design/methodology/approach - The morphology and composition of Fe......-shaped particles were embedded in the anodic oxide film as a thin strip structure and located near the top surface of the film, whereas the round-shaped particles were trapped in the film with a spherical structure, but partially dissolved and were located throughout the thickness of the anodic film. The Fe...

  9. On the Design of Oxide Films, Nanomaterials, and Heterostructures for Solar Water Oxidation Photoanodes

    Science.gov (United States)

    Kronawitter, Coleman Xaver

    Photoelectrochemistry and its associated technologies show unique potential to facilitate the large-scale production of solar fuels—those energy-rich chemicals obtained through conversion processes driven by solar energy, mimicking the photosynthetic process of green plants. The critical component of photoelectrochemical devices designed for this purpose is the semiconductor photoelectrode, which must be optically absorptive, chemically stable, and possess the required electronic band alignment with respect to the redox couple of the electrolyte to drive the relevant electrochemical reactions. After many decades of investigation, the primary technological obstacle remains the development of photoelectrode structures capable of efficient and stable conversion of light with visible frequencies, which is abundant in the solar spectrum. Metal oxides represent one of the few material classes that can be made photoactive and remain stable to perform the required functions. The unique range of functional properties of oxides, and especially the oxides of transition metals, relates to their associated diversity of cation oxidation states, cation electronic configurations, and crystal structures. In this dissertation, the use of metal oxide films, nanomaterials, and heterostructures in photoelectrodes enabling the solar-driven oxidation of water and generation of hydrogen fuel is examined. A range of transition- and post-transition-metal oxide material systems and nanoscale architectures is presented. The first chapters present results related to electrodes based on alpha-phase iron(III) oxide, a promising visible-light-active material widely investigated for this application. Studies of porous films fabricated by physical vapor deposition reveal the importance of structural quality, as determined by the deposition substrate temperature, on photoelectrochemical performance. Heterostructures with nanoscale feature dimensionality are explored and reviewed in a later chapter

  10. Metal oxide semiconductor thin-film transistors for flexible electronics

    Energy Technology Data Exchange (ETDEWEB)

    Petti, Luisa; Vogt, Christian; Büthe, Lars; Cantarella, Giuseppe; Tröster, Gerhard [Electronics Laboratory, Swiss Federal Institute of Technology, Zürich (Switzerland); Münzenrieder, Niko [Electronics Laboratory, Swiss Federal Institute of Technology, Zürich (Switzerland); Sensor Technology Research Centre, University of Sussex, Falmer (United Kingdom); Faber, Hendrik; Bottacchi, Francesca; Anthopoulos, Thomas D. [Department of Physics and Centre for Plastic Electronics, Imperial College London, London (United Kingdom)

    2016-06-15

    The field of flexible electronics has rapidly expanded over the last decades, pioneering novel applications, such as wearable and textile integrated devices, seamless and embedded patch-like systems, soft electronic skins, as well as imperceptible and transient implants. The possibility to revolutionize our daily life with such disruptive appliances has fueled the quest for electronic devices which yield good electrical and mechanical performance and are at the same time light-weight, transparent, conformable, stretchable, and even biodegradable. Flexible metal oxide semiconductor thin-film transistors (TFTs) can fulfill all these requirements and are therefore considered the most promising technology for tomorrow's electronics. This review reflects the establishment of flexible metal oxide semiconductor TFTs, from the development of single devices, large-area circuits, up to entirely integrated systems. First, an introduction on metal oxide semiconductor TFTs is given, where the history of the field is revisited, the TFT configurations and operating principles are presented, and the main issues and technological challenges faced in the area are analyzed. Then, the recent advances achieved for flexible n-type metal oxide semiconductor TFTs manufactured by physical vapor deposition methods and solution-processing techniques are summarized. In particular, the ability of flexible metal oxide semiconductor TFTs to combine low temperature fabrication, high carrier mobility, large frequency operation, extreme mechanical bendability, together with transparency, conformability, stretchability, and water dissolubility is shown. Afterward, a detailed analysis of the most promising metal oxide semiconducting materials developed to realize the state-of-the-art flexible p-type TFTs is given. Next, the recent progresses obtained for flexible metal oxide semiconductor-based electronic circuits, realized with both unipolar and complementary technology, are reported. In

  11. Heat treatable indium tin oxide films deposited with high power pulse magnetron sputtering

    International Nuclear Information System (INIS)

    Horstmann, F.; Sittinger, V.; Szyszka, B.

    2009-01-01

    In this study, indium tin oxide (ITO) films were prepared by high power pulse magnetron sputtering [D. J. Christie, F. Tomasel, W. D. Sproul, D. C. Carter, J. Vac. Sci. Technol. A, 22 (2004) 1415. ] without substrate heating. The ITO films were deposited from a ceramic target at a deposition rate of approx. 5.5 nm*m/min kW. Afterwards, the ITO films were covered with a siliconoxynitride film sputtered from a silicon alloy target in order to prevent oxidation of the ITO film during annealing at 650 deg. C for 10 min in air. The optical and electrical properties as well as the texture and morphology of these films were investigated before and after annealing. Mechanical durability of the annealed films was evaluated at different test conditions. The results were compared with state-of-the art ITO films which were obtained at optimized direct current magnetron sputtering conditions

  12. The application of the barrier-type anodic oxidation method to thickness testing of aluminum films

    Science.gov (United States)

    Chen, Jianwen; Yao, Manwen; Xiao, Ruihua; Yang, Pengfei; Hu, Baofu; Yao, Xi

    2014-09-01

    The thickness of the active metal oxide film formed from a barrier-type anodizing process is directly proportional to its formation voltage. The thickness of the consumed portion of the metal film is also corresponding to the formation voltage. This principle can be applied to the thickness test of the metal films. If the metal film is growing on a dielectric substrate, when the metal film is exhausted in an anodizing process, because of the high electrical resistance of the formed oxide film, a sudden increase of the recorded voltage during the anodizing process would occur. Then, the thickness of the metal film can be determined from this voltage. As an example, aluminum films are tested and discussed in this work. This method is quite simple and is easy to perform with high precision.

  13. Oxidation of nickel particles in an environmental TEM

    DEFF Research Database (Denmark)

    Jeangros, Q.; Hansen, Thomas Willum; Wagner, Jakob Birkedal

    nanometres in size. These domains impinge and cover the particles surface. As the temperature increases under O2, the NiO film grows and creates irregular structures composed of many crystallites. The reaction kinetics are inferred by EELS using different techniques analyzing changes in shapes of the Ni L2...... temperature, providing new insights into oxidation/corrosion processes....

  14. Raman and XPS characterization of vanadium oxide thin films with temperature

    Energy Technology Data Exchange (ETDEWEB)

    Ureña-Begara, Ferran, E-mail: ferran.urena@uclouvain.be [Université catholique de Louvain, Institute of Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), Louvain-la-Neuve (Belgium); Crunteanu, Aurelian [XLIM Research Institute, UMR 7252, CNRS/Université de Limoges, Limoges (France); Raskin, Jean-Pierre [Université catholique de Louvain, Institute of Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), Louvain-la-Neuve (Belgium)

    2017-05-01

    Highlights: • Comprehensive study of the oxidation of VO{sub 2} thin films from R.T. up to 550 °C. • Phase changes and mixed-valence vanadium oxides formed during the oxidation process. • Reported Raman and XPS signatures for each vanadium oxide. • Monitoring of the current and resistance evolution at the surface of the films. • Oxidation model describing the evolution of the vanadium oxides and phase changes. - Abstract: The oxidation mechanisms and the numerous phase transitions undergone by VO{sub 2} thin films deposited on SiO{sub 2}/Si and Al{sub 2}O{sub 3} substrates when heated from room temperature (R.T.) up to 550 °C in air are investigated by Raman and X-ray photoelectron spectroscopy. The results show that the films undergo several intermediate phase transitions between the initial VO{sub 2} monoclinic phase at R.T. and the final V{sub 2}O{sub 5} phase at 550 °C. The information about these intermediate phase transitions is scarce and their identification is important since they are often found during the synthesis of vanadium dioxide films. Significant changes in the film conductivity have also been observed to occur associated to the phase transitions. In this work, current and resistance measurements performed on the surface of the films are implemented in parallel with the Raman measurements to correlate the different phases with the conductivity of the films. A model to explain the oxidation mechanisms and phenomena occurring during the oxidation of the films is proposed. Peak frequencies, full-width half-maxima, binding energies and oxidation states from the Raman and X-ray photoelectron spectroscopy experiments are reported and analyzed for all the phases encountered in VO{sub 2} films prepared on SiO{sub 2}/Si and Al{sub 2}O{sub 3} substrates.

  15. Thick-film effects in the oxidation and hydriding of zirconium alloys

    International Nuclear Information System (INIS)

    Johnson, A.B. Jr.

    1989-08-01

    One of the fundamental discoveries involving radiation effects on the oxidation of Zircaloy in low-oxygen aqueous environments is the influence of thick oxide films. Zircaloy oxidation rates in low-oxygen (hydrogen-rich) coolants initially proceed at relatively low rates, often almost uninfluenced by radiation. Marked upturns in oxidation rate have signaled the onset of radiation effects. The radiation effects appear to correlate with a threshold oxide thickness. Results of the test reactor experiments lead to formulation of the Thick-Film Hypothesis: beyond a threshold oxide thickness, radiolysis of water that infiltrates oxide cracks and pores controls the oxidation rate; radiation creates microenvironments inside the oxide film, producing highly oxidizing conditions, that are no longer suppressed by the coolant-borne hydrogen. Upturns in oxidation rate on high-exposure Zircaloy pressure tubes add confirmatory evidence for the thick-film effect. This paper summarizes the early evidence for thick-film behavior, including oxidation and hydriding trends, updates confirmatory evidence from Zircaloy reactor and fuel assembly components, and highlights other observations from the test reactor series that have potential fundamental significance to explanations of radiation effects on Zircaloy. 23 refs., 10 figs

  16. Investigation of structural, morphological and electrical properties of APCVD vanadium oxide thin films

    International Nuclear Information System (INIS)

    Papadimitropoulos, Georgios; Trantalidis, Stelios; Tsiatouras, Athanasios; Vasilopoulou, Maria; Davazoglou, Dimitrios; Kostis, Ioannis

    2015-01-01

    Vanadium oxide films were chemically vapor deposited (CVD) on oxidized Si substrates covered with CVD tungsten (W) thin films and on glass substrates covered with indium tin oxide (ITO) films, using vanadium(V) oxy-tri-isopropoxide (C 9 H 21 O 4 V) vapors. X-ray diffraction (XRD) measurements showed that the deposited films were composed of a mixture of vanadium oxides; the composition was determined mainly by the deposition temperature and less by the precursor temperature. At temperatures up to 450 C the films were mostly composed by monoclinic VO 2 . Other peaks corresponding to various vanadium oxides were also observed. X-ray microanalysis confirmed the composition of the films. The surface morphology was studied with atomic force microscopy (AFM) and scanning electron microscopy (SEM). These measurements revealed that the morphology strongly depends on the used substrate and the deposition conditions. The well-known metal-insulator transition was observed near 75 C for films mostly composed by monoclinic VO 2 . Films deposited at 450 C exhibited two transitions one near 50 C and the other near 60 C possibly related to the presence of other vanadium phases or of important stresses in them. Finally, the vanadium oxide thin films exhibited significant sensory capabilities decreasing their resistance in the presence of hydrogen gas with response times in the order of a few seconds and working temperature at 40 C. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. An electrochemical study of the flow rate effect on the oxide film of SA106 Gr.C piping

    International Nuclear Information System (INIS)

    Hong, S. M.; Kim, J. H.; Kim, I. S.

    2002-01-01

    Effect of water flow rate on the oxide film of SA106 Gr.C piping was evaluated quantitatively through electrochemical method. It was carried out with weight change experiments, polarization tests, and EIS tests with rig that simulates water flow. Without water flow, the oxide film is so stable that it effectively blocks current exchange. With water flow, the oxide film was damaged and electrochemical current density and oxide film properties, C dl and R p were significantly changed

  18. Tensile strain effect in ferroelectric perovskite oxide thin films on spinel magnesium aluminum oxide substrate

    Science.gov (United States)

    Zhou, Xiaolan

    Ferroelectrics are used in FeRAM (Ferroelectric random-access memory). Currently (Pb,Zr)TiO3 is the most common ferroelectric material. To get lead-free and high performance ferroelectric material, we investigated perovskite ferroelectric oxides (Ba,Sr)TiO3 and BiFeO3 films with strain. Compressive strain has been investigated intensively, but the effects of tensile strain on the perovskite films have yet to be explored. We have deposited (Ba,Sr)TiO3, BiFeO3 and related films by pulsed laser deposition (PLD) and analyzed the films by X-ray diffractometry (XRD), atomic force microscopy (AFM), etc. To obtain inherently fully strained films, the selection of the appropriate substrates is crucial. MgAl2O4 matches best with good quality and size, yet the spinel structure has an intrinsic incompatibility to that of perovskite. We introduced a rock-salt structure material (Ni 1-xAlxO1+delta) as a buffer layer to mediate the structural mismatch for (Ba,Sr)TiO3 films. With buffer layer Ni1-xAlxO1+delta, we show that the BST films have high quality crystallization and are coherently epitaxial. AFM images show that the films have smoother surfaces when including the buffer layer, indicating an inherent compatibility between BST-NAO and NAO-MAO. In-plane Ferroelectricity measurement shows double hysteresis loops, indicating an antiferroelectric-like behavior: pinned ferroelectric domains with antiparallel alignments of polarization. The Curie temperatures of the coherent fully strained BST films are also measured. It is higher than 900°C, at least 800°C higher than that of bulk. The improved Curie temperature makes the use of BST as FeRAM feasible. We found that the special behaviors of ferroelectricity including hysteresis loop and Curie temperature are due to inherent fully tensile strain. This might be a clue of physics inside ferroelectric stain engineering. An out-of-plane ferroelectricity measurement would provide a full whole story of the tensile strain. However, a

  19. An investigation of room temperature ''oxidized'' thin films of A1 for photovoltaic applications

    International Nuclear Information System (INIS)

    Adegboyega, G.A.

    1985-12-01

    Sheet resistance and transmittance changes of thin films of A1 evaporated in high vacuum were measured during sorption of oxygen at room atmosphere. An increase of both sheet resistance and transmittance with a tendency to saturation has been observed. Evaluation of various thicknesses of the films for possible use as transparent electrode material for photovoltaic applications shows that for very thin films ( = 200 A) the ''oxidized'' films are superior. (author)

  20. Energetic Surface Smoothing of Complex Metal-Oxide Thin Films

    International Nuclear Information System (INIS)

    Willmott, P.R.; Herger, R.; Schlepuetz, C.M.; Martoccia, D.; Patterson, B.D.

    2006-01-01

    A novel energetic smoothing mechanism in the growth of complex metal-oxide thin films is reported from in situ kinetic studies of pulsed laser deposition of La 1-x Sr x MnO 3 on SrTiO 3 , using x-ray reflectivity. Below 50% monolayer coverage, prompt insertion of energetic impinging species into small-diameter islands causes them to break up to form daughter islands. This smoothing mechanism therefore inhibits the formation of large-diameter 2D islands and the seeding of 3D growth. Above 50% coverage, islands begin to coalesce and their breakup is thereby suppressed. The energy of the incident flux is instead rechanneled into enhanced surface diffusion, which leads to an increase in the effective surface temperature of ΔT≅500 K. These results have important implications on optimal conditions for nanoscale device fabrication using these materials

  1. Nonequilibrium dephasing in two-dimensional indium oxide films

    International Nuclear Information System (INIS)

    Ovadyahu, Z.

    2001-01-01

    We report on results of resistance R and magnetoresistance in diffusive indium oxide films measured down to T=0.28K. Analyzing the data using weak-localization theory shows that the phase-coherent time τ v ar-phi increases without bound as T->0. However, this result is obtained only when the voltage applied to the sample V is sufficiently small. When V is not small, τ v ar-phi may appear to 'saturate' while R continues to increase as T->0. Possible reasons for this intriguing behavior are discussed. It is argued that in out-of-equilibrium situations R(T) and τ v ar-phi(T) need not behave similarly. We suggest a heuristic picture, involving two-level systems, which might be consistent with our observations

  2. Deformation of confined poly(ethylene oxide) in multilayer films.

    Science.gov (United States)

    Lai, Chuan-Yar; Hiltner, Anne; Baer, Eric; Korley, LaShanda T J

    2012-04-01

    The effect of confinement on the deformation behavior of poly(ethylene oxide) (PEO) was studied using melt processed coextruded poly(ethylene-co-acrylic acid) (EAA) and PEO multilayer films with varying PEO layer thicknesses from 3600 to 25 nm. The deformation mechanism was found to shift as layer thickness was decreased between 510 and 125 nm, from typical axial alignment of the crystalline fraction, as seen in bulk materials, to nonuniform micronecking mechanisms found in solution-grown single crystals. This change was evaluated via tensile testing, wide-angle X-ray diffraction (WAXD), atomic force microscopy (AFM), and differential scanning calorimetry (DSC). With the commercially relevant method of melt coextrusion, we were able to overcome the limitations to the testing of solution-grown single crystals, and the artifacts that occur from their handling, and bridged the gap in knowledge between thick bulk materials and thin single crystals.

  3. Datalogger usando nios ii

    OpenAIRE

    Campoverde Rugel, Luis Enrique; Velásquez Vargas, Washington Adrián; Ponguillo, Ronald

    2013-01-01

    El presente proyecto consiste en la implementación de un Datalogger utilizando el microprocesador NIOS II el cual fue embebido en el FPGA CYCLONE II que se encuentra integrada en la tarjeta de desarrollo ALTERA DE2, el cual obtiene datos de distintos sensores y los almacena en una tarjeta SD Card. Para la realización del proyecto se aplican cuatro etapas. La primera etapa está basada en obtener los datos mediante el uso de sensores y la transmisión usando un PIC, la siguiente etapa se basa...

  4. Hybrid dextran-iron oxide thin films deposited by laser techniques for biomedical applications

    Energy Technology Data Exchange (ETDEWEB)

    Predoi, D.; Ciobanu, C.S. [National Institute for Physics of Materials, P.O. Box MG 07, Bucharest, Magurele (Romania); Radu, M.; Costache, M.; Dinischiotu, A. [Molecular Biology Center, University of Bucharest, 91-95 Splaiul Independentei, 76201, Bucharest 5 (Romania); Popescu, C.; Axente, E.; Mihailescu, I.N. [National Institute for Lasers, Plasma and Radiations Physics, P. O. Box MG 36, 77125 Bucharest (Romania); Gyorgy, E., E-mail: egyorgy@cin2.es [National Institute for Lasers, Plasma and Radiations Physics, P. O. Box MG 36, 77125 Bucharest (Romania); Consejo Superior de Investigaciones Cientificas, Centre d' Investigacions en Nanociencia i Nanotecnologia (CSIC-CIN2), Campus UAB, 08193 Bellaterra (Spain)

    2012-02-01

    Iron oxide nanoparticles were prepared by chemical co-precipitation method. The nanoparticles were mixed with dextran in distilled water. The obtained solutions were frozen in liquid nitrogen and used as targets during matrix assisted pulsed laser evaporation for the growth of hybrid, iron oxide nanoparticles-dextran thin films. Fourier Transform Infrared Spectroscopy and X-ray diffraction investigations revealed that the obtained films preserve the structure and composition of the initial, non-irradiated iron oxide-dextran composite material. The biocompatibility of the iron oxide-dextran thin films was demonstrated by 3-(4.5 dimethylthiazol-2yl)-2.5-diphenyltetrazolium bromide-based colorimetric assay, using human liver hepatocellular carcinoma cells. - Highlights: Black-Right-Pointing-Pointer Hybrid, dextran-iron oxide nanoparticles and thin films. Black-Right-Pointing-Pointer Laser immobilization. Black-Right-Pointing-Pointer Biocompatibility of dextran-iron oxide nanoparticles.

  5. Hybrid dextran-iron oxide thin films deposited by laser techniques for biomedical applications

    International Nuclear Information System (INIS)

    Predoi, D.; Ciobanu, C.S.; Radu, M.; Costache, M.; Dinischiotu, A.; Popescu, C.; Axente, E.; Mihailescu, I.N.; Gyorgy, E.

    2012-01-01

    Iron oxide nanoparticles were prepared by chemical co-precipitation method. The nanoparticles were mixed with dextran in distilled water. The obtained solutions were frozen in liquid nitrogen and used as targets during matrix assisted pulsed laser evaporation for the growth of hybrid, iron oxide nanoparticles-dextran thin films. Fourier Transform Infrared Spectroscopy and X-ray diffraction investigations revealed that the obtained films preserve the structure and composition of the initial, non-irradiated iron oxide-dextran composite material. The biocompatibility of the iron oxide-dextran thin films was demonstrated by 3-(4.5 dimethylthiazol-2yl)-2.5-diphenyltetrazolium bromide-based colorimetric assay, using human liver hepatocellular carcinoma cells. - Highlights: ► Hybrid, dextran-iron oxide nanoparticles and thin films. ► Laser immobilization. ► Biocompatibility of dextran-iron oxide nanoparticles.

  6. Metal-Oxide Film Conversions Involving Large Anions

    International Nuclear Information System (INIS)

    Pretty, S.; Zhang, X.; Shoesmith, D.W.; Wren, J.C.

    2008-01-01

    The main objective of my research is to establish the mechanism and kinetics of metal-oxide film conversions involving large anions (I - , Br - , S 2- ). Within a given group, the anions will provide insight on the effect of anion size on the film conversion, while comparison of Group 6 and Group 7 anions will provide insight on the effect of anion charge. This research has a range of industrial applications, for example, hazardous radioiodine can be immobilized by reaction with Ag to yield AgI. From the perspective of public safety, radioiodine is one of the most important fission products from the uranium fuel because of its large fuel inventory, high volatility, and radiological hazard. Additionally, because of its mobility, the gaseous iodine concentration is a critical parameter for safety assessment and post-accident management. A full kinetic analysis using electrochemical techniques has been performed on the conversion of Ag 2 O to (1) AgI and (2) AgBr. (authors)

  7. Metal-Oxide Film Conversions Involving Large Anions

    Energy Technology Data Exchange (ETDEWEB)

    Pretty, S.; Zhang, X.; Shoesmith, D.W.; Wren, J.C. [The University of Western Ontario, Chemistry Department, 1151 Richmond St., N6A 5B7, London, Ontario (Canada)

    2008-07-01

    The main objective of my research is to establish the mechanism and kinetics of metal-oxide film conversions involving large anions (I{sup -}, Br{sup -}, S{sup 2-}). Within a given group, the anions will provide insight on the effect of anion size on the film conversion, while comparison of Group 6 and Group 7 anions will provide insight on the effect of anion charge. This research has a range of industrial applications, for example, hazardous radioiodine can be immobilized by reaction with Ag to yield AgI. From the perspective of public safety, radioiodine is one of the most important fission products from the uranium fuel because of its large fuel inventory, high volatility, and radiological hazard. Additionally, because of its mobility, the gaseous iodine concentration is a critical parameter for safety assessment and post-accident management. A full kinetic analysis using electrochemical techniques has been performed on the conversion of Ag{sub 2}O to (1) AgI and (2) AgBr. (authors)

  8. Pyroelectricity of silicon-doped hafnium oxide thin films

    Science.gov (United States)

    Jachalke, Sven; Schenk, Tony; Park, Min Hyuk; Schroeder, Uwe; Mikolajick, Thomas; Stöcker, Hartmut; Mehner, Erik; Meyer, Dirk C.

    2018-04-01

    Ferroelectricity in hafnium oxide thin films is known to be induced by various doping elements and in solid-solution with zirconia. While a wealth of studies is focused on their basic ferroelectric properties and memory applications, thorough studies of the related pyroelectric properties and their application potential are only rarely found. This work investigates the impact of Si doping on the phase composition and ferro- as well as pyroelectric properties of thin film capacitors. Dynamic hysteresis measurements and the field-free Sharp-Garn method were used to correlate the reported orthorhombic phase fractions with the remanent polarization and pyroelectric coefficient. Maximum values of 8.21 µC cm-2 and -46.2 µC K-1 m-2 for remanent polarization and pyroelectric coefficient were found for a Si content of 2.0 at%, respectively. Moreover, temperature-dependent measurements reveal nearly constant values for the pyroelectric coefficient and remanent polarization over the temperature range of 0 ° C to 170 ° C , which make the material a promising candidate for IR sensor and energy conversion applications beyond the commonly discussed use in memory applications.

  9. The disclosed transformation of pre-sputtered Ti films into nanoparticles via controlled thermal oxidation

    Science.gov (United States)

    Awad, M. A.; Raaif, M.

    2018-05-01

    Nanoparticles of TiO2 were successfully prepared from pre-sputtered Ti films using the controlled thermal oxidation. The effect of oxidation temperature on structural, morphological and optical properties in addition to photocatalysis activity of the sputtered films was tested and explained. Analysis of XRD and EDAX elucidated the enhancement in crystallization and oxygen content with the increase of oxidation temperature. SEM depicted the formation of very fine nanoparticles with no specific border on the films oxidized at 550 and 600 °C, whilst crystallites with larger size of approximately from 16 to 23 nm have been observed for the film oxidized at 650 °C. Both optical transmission and refractive index were increased with increasing the oxidation temperature. A red shift in the absorption edge was obtained for the films oxidized at 650 °C compared to that oxidized at 600 °C. The photocatalysis tests demonstrated the priority of 600 °C nanoparticle films to decompose methyl orange (MO) more than 650 °C treated film.

  10. Electrophoretic deposition of PTFE particles on porous anodic aluminum oxide film and its tribological properties

    International Nuclear Information System (INIS)

    Zhang, Dongya; Dong, Guangneng; Chen, Yinjuan; Zeng, Qunfeng

    2014-01-01

    Polytetrafluoroethylene (PTFE) composite film was successfully fabricated by depositing PTFE particles into porous anodic aluminum oxide film using electrophoretic deposition (EPD) process. Firstly, porous anodic aluminum oxide film was synthesized by anodic oxidation process in sulphuric acid electrolyte. Then, PTFE particles in suspension were directionally deposited into the porous substrate. Finally, a heat treatment at 300 °C for 1 h was utilized to enhance PTFE particles adhesion to the substrate. The influence of anodic oxidation parameters on the morphology and micro-hardness of the porous anodic aluminum oxide film was studied and the PTFE particles deposited into the pores were authenticated using energy-dispersive spectrometer (EDS) and scanning electron microscopy (SEM). Tribological properties of the PTFE composite film were investigated under dry sliding. The experimental results showed that the composite film exhibit remarkable low friction. The composite film had friction coefficient of 0.20 which deposited in 15% PTFE emulsion at temperature of 15 °C and current density of 3 A/dm 2 for 35 min. In addition, a control specimen of porous anodic aluminum oxide film and the PTFE composite film were carried out under the same test condition, friction coefficient of the PTFE composite film was reduced by 60% comparing with the control specimen at 380 MPa and 100 mm/s. The lubricating mechanism was that PTFE particles embedded in porous anodic aluminum oxide film smeared a transfer film on the sliding path and the micro-pores could support the supplement of solid lubricant during the sliding, which prolonged the lubrication life of the aluminum alloys.

  11. Combustion synthesized indium-tin-oxide (ITO) thin film for source/drain electrodes in all solution-processed oxide thin-film transistors

    International Nuclear Information System (INIS)

    Tue, Phan Trong; Inoue, Satoshi; Takamura, Yuzuru; Shimoda, Tatsuya

    2016-01-01

    We report combustion solution synthesized (SCS) indium-tin-oxide (ITO) thin film, which is a well-known transparent conductive oxide, for source/drain (S/D) electrodes in solution-processed amorphous zirconium-indium-zinc-oxide TFT. A redox-based combustion synthetic approach is applied to ITO thin film using acetylacetone as a fuel and metal nitrate as oxidizer. The structural and electrical properties of SCS-ITO precursor solution and thin films were systematically investigated with changes in tin concentration, indium metal precursors, and annealing conditions such as temperature, time, and ambient. It was found that at optimal conditions the SCS-ITO thin film exhibited high crystalline quality, atomically smooth surface (RMS ∝ 4.1 Aa), and low electrical resistivity (4.2 x 10 -4 Ω cm). The TFT using SCS-ITO film as the S/D electrodes showed excellent electrical properties with negligible hysteresis. The obtained ''on/off'' current ratio, subthreshold swing factor, subthreshold voltage, and field-effect mobility were 5 x 10 7 , 0.43 V/decade, 0.7 V, and 2.1 cm 2 /V s, respectively. The performance and stability of the SCS-ITO TFT are comparable to those of the sputtered-ITO TFT, emphasizing that the SCS-ITO film is a promising candidate for totally solution-processed oxide TFTs. (orig.)

  12. Study of thin metal films and oxide materials for nanoelectronics applications

    OpenAIRE

    De Los Santos Valladares, Luis

    2012-01-01

    Appendix A Pages 132-134 have been removed from this online version of the thesis for publisher copyright reasons. These had contained page images from the cover of Nanotechnology, Vol. 21, Nov 2010 and its corresponding web alert Different types of thin metal films and oxide materials are studied for their potential application in nanoelectronics: gold and copper films, nickel nanoelectrodes, oxide nanograin superconductors, carboxyl ferromagnetic microspheres and graphene oxide...

  13. Effect of post annealing treatment on electrochromic properties of spray deposited niobium oxide thin films

    International Nuclear Information System (INIS)

    Mujawar, S.H.; Inamdar, A.I.; Betty, C.A.; Ganesan, V.; Patil, P.S.

    2007-01-01

    Niobium oxide thin films were deposited on the glass and fluorine doped tin oxide (FTO) coated glass substrates using simple and inexpensive spray pyrolysis technique. During deposition of the films various process parameters like nozzle to substrate distance, spray rate, concentration of sprayed solution were optimized to obtain well adherent and transparent films. The films prepared were further annealed and effect of post annealing on the structural, morphological, optical and electrochromic properties was studied. Structural and morphological characterizations of the films were carried out using scanning electron microscopy, atomic force microscopy and X-ray diffraction techniques. Electrochemical properties of the niobium oxide thin films were studied by using cyclic-voltammetry, chronoamperometry and chronocoulometry

  14. Influence of titanium oxide films on copper nucleation during electrodeposition

    International Nuclear Information System (INIS)

    Chang, Hyun K.; Choe, Byung-Hak; Lee, Jong K.

    2005-01-01

    Copper electrodeposition has an important industrial role because of various interconnects used in electronic devices such as printed wire boards. With an increasing trend in device miniaturization, in demand are void-free, thin copper foils of 10 μm thick or less with a very low surface profile. In accordance, nucleation kinetics of copper was studied with titanium cathodes that were covered with thin, passive oxide films of 2-3 nm. Such an insulating oxide layer with a band gap of 3 eV is supposed to nearly block charge transfer from the cathode to the electrolyte. However, significant nucleation rates of copper were observed. Pipe tunneling mechanism along a dislocation core is reasoned to account for the high nucleation kinetics. A dislocation core is proposed to be a high electron tunneling path with a reduced energy barrier and a reduced barrier thickness. In supporting the pipe tunneling mechanism, both 'in situ' and 'ex situ' scratch tests were performed to introduce extra dislocations into the cathode surface, that is, more high charge paths via tunneling, before electrodeposition

  15. Oxidation behaviour of Ti2AIN films composed mainly of nanolaminated MAX phase.

    Science.gov (United States)

    Wang, Q M; Garkas, W; Renteria, A Flores; Leyens, C; Kim, K H

    2011-10-01

    In this paper, we reported the oxidation behaviour of Ti2AIN films on polycrystalline Al2O3 substrates. The Ti2AIN films composed mainly of nanolaminated MAX phase was obtained by first depositing Ti-Al-N films using reactive sputtering of two elemental Ti and Al targets in Ar/N2 atmosphere and subsequent vacuum annealing at 800 degrees C for 1 h. The Ti2AIN films exhibited excellent oxidation resistance and thermal stability at 600-900 degrees C in air. Very low mass gain was observed. At low temperature (600 degrees C), no oxide crystals were observed on film surface. Blade-like Theta-Al2O3 fine crystals formed on film surfaces at 700-800 degrees C. At high temperature (900 degrees C), firstly Theta-Al2O3 formed on film surface and then transformed into alpha-Al2O3. At 700-900 degrees C, a continuous Al2O3 layer formed on Ti2AIN films surface, acting as diffusion barrier preventing further oxidation attack. The mechanism of the excellent oxidation resistance of Ti2AIN films was discussed based on the experimental results.

  16. Anisotropic ferromagnetic behaviors in highly orientated epitaxial NiO-based thin films

    Directory of Open Access Journals (Sweden)

    Yu-Jun Zhang

    2015-07-01

    Full Text Available Antiferromagnetic materials attract a great amount of attention recently for promising antiferromagnet-based spintronics applications. NiO is a conventional antiferromagnetic semiconductor material and can show ferromagnetism by doping other magnetic elements. In this work, we synthesized epitaxial Fe-doped NiO thin films on SrTiO3 substrates with various crystal orientations by pulsed laser deposition. The room-temperature ferromagnetism of these films is anisotropic, including the saturated magnetization and the coercive field. The anisotropic magnetic behaviors of Fe-doped NiO diluted magnetic oxide system should be closely correlated to the magnetic structure of antiferromagnetic NiO base. Within the easy plane of NiO, the coercive field of the films becomes smaller, and larger coercive field while tested out of the easy plane of NiO. The saturated magnetization anisotropy is due to different strain applied by different substrates. These results lead us to more abundant knowledge of the exchange interactions in this conventional antiferromagnetic system.

  17. Impact of acid and oxidative modifications, single or dual, of sorghum starch on biodegradable films.

    Science.gov (United States)

    Biduski, Bárbara; Silva, Francine Tavares da; Silva, Wyller Max da; Halal, Shanise Lisie de Mello El; Pinto, Vania Zanella; Dias, Alvaro Renato Guerra; Zavareze, Elessandra da Rosa

    2017-01-01

    The objective of this study was to evaluate the effects of acid and oxidation modifications on sorghum starch, as well as the effect of dual modification of starch on the physical, morphological, mechanical, and barrier properties of biodegradable films. The acid modification was performed with 3% lactic acid and the oxidation was performed with 1.5% active chlorine. For dual modification, the acid modification was performed first, followed by oxidation under the same conditions as above. Both films of the oxidized starches, single and dual, had increased stiffness, providing a higher tensile strength and lower elongation when compared to films based on native and single acid modified starches. However, the dual modification increased the water vapor permeability of the films without changing their solubility. The increase in sorghum starch concentration in the filmogenic solution increased the thickness, water vapor permeability, and elongation of the films. Copyright © 2016. Published by Elsevier Ltd.

  18. Bloodcompatibility improvement of titanium oxide film modified by phosphorus ion implantation

    International Nuclear Information System (INIS)

    Yang, P.; Leng, Y.X.; Zhao, A.S.; Zhou, H.F.; Xu, L.X.; Hong, S.; Huang, N.

    2006-01-01

    Our recent investigation suggested that Ti-O thin film could be a newly developed antithrombotic material and its thromboresistance could be related to its physical properties of wide gap semiconductor. In this work, titanium oxide film was modified by phosphorus ion implantation and succeeding vacuum annealing. RBS were used to investigate phosphorus distribution profile. Contact angle test results show that phosphorus-doped titanium oxide film becomes more hydrophilic after higher temperature annealing, while its electric conductivity increases. Antithrombotic property of phosphorus-doped titanium oxide thin films was examined by clotting time and platelet adhesion tests. The results suggest that phosphorus doping is an effective way to improve the bloodcompatibility of titanium oxide film, and it is related to the changes of electron structure and surface properties caused by phosphorus doping

  19. Mechanical properties of bioplastics cassava starch film with Zinc Oxide nanofiller as reinforcement

    Science.gov (United States)

    Harunsyah; Yunus, M.; Fauzan, Reza

    2017-06-01

    This study focuses on investigating the influence of zinc oxide nanofiller on the mechanical properties of bioplastic cassava starch films. Bioplastic cassava starch film-based zinc oxide reinforced composite biopolymeric films were prepared by casting technique. The content of zinc oxide in the bioplastic films was varied from 0.2%, 0.4%, 0.6%, 0.8% and 1.0% (w/w) by weight of starch. Surface morphologies of the composites bioplastic films were examined by scanning electron microscope (SEM).The result showed that the Tensile strength (TS) was improved significantly with the additional of zinc oxide but the elongation at break (EB %) of the composites was decreased. The maximum tensile strength obtained was 22.30 kgf / mm on the additional of zinc oxide by 0.6% and plastilizer by 25%. Based on data of FTIR, the produced film plastic did not change the group function and it can be concluded that theinteraction in film plastic produced was only a physical interaction. Biodegradable plastic film based on cassava starch-zinc oxide and plasticizer glycerol showed that interesting mechanical properties being transparent, clear, homogeneous, flexible, and easily handled.

  20. Study of oxide/metal/oxide thin films for transparent electronics and solar cells applications by spectroscopic ellipsometry

    Directory of Open Access Journals (Sweden)

    Mihaela Girtan

    2017-05-01

    Full Text Available A comprehensive study of a class of Oxide/Metal/Oxide (Oxide = ITO, AZO, TiO2 and Bi2O3, Metal = Au thin films was done by correlating the spectrophotometric studies with the ellispometric models. Films were deposited by successive sputtering from metallic targets In:Sn, Zn:Al, Ti and Bi in reactive atmosphere (for the oxide films and respective inert atmosphere (for the metallic Au interlayer films on glass substrates. The measurements of optical constants n—the refractive index and k—the extinction coefficient, at different incident photon energies for single oxide films and also for the three layers films oxide/metal/oxide samples were made using the spectroscopic ellipsometry (SE technique. The ellipsometry modelling process was coupled with the recorded transmission spectra data of a double beam spectrophotometer and the best fitting parameters were obtained not only by fitting the n and k experimental data with the dispersion fitting curves as usual is practiced in the most reported data in literature, but also by comparing the calculated the transmission coefficient from ellipsometry with the experimental values obtained from direct spectrophotometry measurements. In this way the best dispersion model was deduced for each sample. Very good correlations were obtained for the other different thin films characteristics such as the films thickness, optical band gap and electrical resistivity obtained by other measurements and calculation techniques. The ellipsometric modelling, can hence give the possibility in the future to predict, by ellipsometric simulations, the proper device architecture in function of the preferred optical and electrical properties.

  1. Morphological Influence of Solution-Processed Zinc Oxide Films on Electrical Characteristics of Thin-Film Transistors

    Directory of Open Access Journals (Sweden)

    Hyeonju Lee

    2016-10-01

    Full Text Available We report on the morphological influence of solution-processed zinc oxide (ZnO semiconductor films on the electrical characteristics of ZnO thin-film transistors (TFTs. Different film morphologies were produced by controlling the spin-coating condition of a precursor solution, and the ZnO films were analyzed using atomic force microscopy, X-ray diffraction, X-ray photoemission spectroscopy, and Hall measurement. It is shown that ZnO TFTs have a superior performance in terms of the threshold voltage and field-effect mobility, when ZnO crystallites are more densely packed in the film. This is attributed to lower electrical resistivity and higher Hall mobility in a densely packed ZnO film. In the results of consecutive TFT operations, a positive shift in the threshold voltage occurred irrespective of the film morphology, but the morphological influence on the variation in the field-effect mobility was evident. The field-effect mobility in TFTs having a densely packed ZnO film increased continuously during consecutive TFT operations, which is in contrast to the mobility decrease observed in the less packed case. An analysis of the field-effect conductivities ascribes these results to the difference in energetic traps, which originate from structural defects in the ZnO films. Consequently, the morphological influence of solution-processed ZnO films on the TFT performance can be understood through the packing property of ZnO crystallites.

  2. Electrochemical characterization of oxide film formed at high temperature on Alloy 690

    Energy Technology Data Exchange (ETDEWEB)

    Abraham, Geogy J., E-mail: gja@barc.gov.in [Materials Science Division, BARC, Mumbai 400 085 (India); Bhambroo, Rajan [Deptt. of Metallurgical Engg. and Mat. Sci., IIT Bombay, Mumbai 400 076 (India); Kain, V. [Materials Science Division, BARC, Mumbai 400 085 (India); Shekhar, R. [CCCM, BARC, Hyderabad 500 062 (India); Dey, G.K. [Materials Science Division, BARC, Mumbai 400 085 (India); Raja, V.S. [Deptt. of Metallurgical Engg. and Mat. Sci., IIT Bombay, Mumbai 400 076 (India)

    2012-02-15

    Highlights: Black-Right-Pointing-Pointer GD-QMS studies of high temperature oxide film formed on Alloy 690. Black-Right-Pointing-Pointer Defect density reduced with increase in temperature. Black-Right-Pointing-Pointer Electrochemical behaviour of oxide film correlated to the Cr-content in oxide. - Abstract: High temperature passivation studies on Alloy 690 were carried out in lithiated water at 250 Degree-Sign C, 275 Degree-Sign C and 300 Degree-Sign C for 72 h. The passive films were characterized by glow discharge-quadrupole mass spectroscopy (GD-QMS) for compositional variation across the depth and micro laser Raman spectroscopy for oxide composition on the surface. The defect density in the oxide films was established from the Mott-Schottky analysis using electrochemical impedance spectroscopy. Electrochemical experiments at room temperature in chloride medium revealed best passivity behaviour by the oxide film formed at 300 Degree-Sign C for 72 h. The electrochemical studies were correlated to the chromium (and oxygen) content of the oxide films. Autoclaving at 300 Degree-Sign C resulted in the best passive film formation on Alloy 690 in lithiated water.

  3. The role of polymer films on the oxidation of magnetite nanoparticles

    Science.gov (United States)

    Letti, C. J.; Paterno, L. G.; Pereira-da-Silva, M. A.; Morais, P. C.; Soler, M. A. G.

    2017-02-01

    A detailed investigation about the role of polymer films on the oxidation process of magnetite nanoparticles (∼7 nm diameter), under laser irradiation is performed employing micro Raman spectroscopy. To support this investigation, Fe3O4-np are synthesized by the co-precipitation method and assembled layer-by-layer with sodium sulfonated polystyrene (PSS). Polymer films (Fe3O4-np/PSS)n with n=2,3,5,7,10 and 25 bilayers are employed as a model system to study the oxidation process under laser irradiation. Raman data are further processed by principal component analysis. Our findings suggest that PSS protects Fe3O4-np from oxidation when compared to powder samples, even for the sample with the greater number of bilayers. Further, the oxidation of magnetite to maghemite occurs preferably for thinner films up to 7 bilayers, while the onset for the formation of the hematite phase depends on the laser intensity for thicker films. Water takes part on the oxidation processes of magnetite, the oxidation/phase transformation of Fe3O4-np is intensified in films with more bilayers, since more water is included in those films. Encapsulation of Fe3O4-np by PSS in layer-by-layer films showed to be very efficient to avoid the oxidation process in nanosized magnetite.

  4. Mesoporous amorphous tungsten oxide electrochromic films: a Raman analysis of their good switching behavior

    International Nuclear Information System (INIS)

    Chatzikyriakou, Dafni; Krins, Natacha; Gilbert, Bernard; Colson, Pierre; Dewalque, Jennifer; Denayer, Jessica; Cloots, Rudi; Henrist, Catherine

    2014-01-01

    Graphical abstract: - Highlights: • Mesoporous films exhibit better electrochemical kinetics compared to the dense films. • Mesoporous films exhibit better reversibility compared to the dense films. • Li + cations disrupt WO 3 network in a reversible way in the mesoporous film. • Li + irreversibly intercalate in the voids of crystallites in the dense film. - Abstract: The intercalation and de-intercalation of lithium cations in electrochromic tungsten oxide thin films are significantly influenced by their structural and surface characteristics. In this study, we prepared two types of amorphous films via the sol-gel technique: one dense and one mesoporous in order to compare their response upon lithium intercalation and de-intercalation. According to chronoamperometric measurements, Li + intercalates/de-intercalates faster in the mesoporous film (24s/6s) than in the dense film (48s/10s). The electrochemical measurements (cyclic voltammetry and chronoamperometry) also showed worse reversibility for the dense film compared to the mesoporous film, giving rise to important Li + trapping and remaining coloration of the film. Raman analysis showed that the mesoporous film provides more accessible and various W-O surface bonds for Li + intercalation. On the contrary, in the first electrochemical insertion and de-insertion in the dense film, Li + selectively reacts with a few surface W-O bonds and preferentially intercalates into pre-existing crystallites to form stable irreversible Li x WO 3 bronze

  5. Degradation of superconducting Nb/NbN films by atmospheric oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Henry, Michael David; Wolfley, Steven L.; Young, Travis Ryan; Monson, Todd; Pearce, Charles Joseph; Lewis, Rupert M.; Clark, Blythe; Brunke, Lyle Brent; Missert, Nancy A.

    2017-03-01

    Niobium and niobium nitride thin films are transitioning from fundamental research toward wafer scale manufacturing with technology drivers that include superconducting circuits and electronics, optical single photon detectors, logic, and memory. Successful microfabrication requires precise control over the properties of sputtered superconducting films, including oxidation. Previous work has demonstrated the mechanism in oxidation of Nb and how film structure could have deleterious effects upon the superconducting properties. This study provides an examination of atmospheric oxidation of NbN films. By examination of the room temperature sheet resistance of NbN bulk oxidation was identified and confirmed by secondary ion mass spectrometry. As a result, Meissner magnetic measurements confirmed the bulk oxidation not observed with simple cryogenic resistivity measurements.

  6. Copper oxide thin films anchored on glass substrate by sol gel spin coating technique

    Science.gov (United States)

    Krishnaprabha, M.; Venu, M. Parvathy; Pattabi, Manjunatha

    2018-05-01

    Owing to the excellent optical, thermal, electrical and photocatalytic properties, copper oxide nanoparticles/films have found applications in optoelectronic devices like solar/photovoltaic cells, lithium ion batteries, gas sensors, catalysts, magnetic storage media etc. Copper oxide is a p-type semiconductor material having a band gap energy varying from 1.2 eV-2.1 eV. Syzygium Samarangense fruit extract was used as reducing agent to synthesize copper oxide nanostructures at room temperature from 10 mM copper sulphate pentahydrate solution. The synthesized nanostructures are deposited onto glass substrate by spin coating followed by annealing the film at 200 °C. Both the copper oxide colloid and films are characterized using UV-Vis spectroscopy, field emission scanning electron microscopy (FESEM) and energy dispersive spectroscopy (EDS) techniques. Presence of 2 peaks at 500 nm and a broad peak centered around 800 nm in the UV-Vis absorbance spectra of copper oxide colloid/films is indicative of the formation of anisotropic copper oxide nanostructures is confirmed by the FESEM images which showed the presence of triangular shaped and rod shaped particles. The rod shaped particles inside island like structures were found in unannealed films whereas the annealed films contained different shaped particles with reduced sizes. The elemental analysis using EDS spectra of copper oxide nanoparticles/films showed the presence of both copper and oxygen. Electrical properties of copper oxide nanoparticles are affected due to quantum size effect. The electrical studies carried out on both unannealed and annealed copper oxide films revealed an increase in resistivity with annealing of the films.

  7. Role of plasma activation in tailoring the nanostructure of multifunctional oxides thin films

    Energy Technology Data Exchange (ETDEWEB)

    Giangregorio, Maria M.; Losurdo, Maria; Capezzuto, Pio [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, and Department of Chemistry, University of Bari, via Orabona, 4-70125 Bari (Italy); Bruno, Giovanni [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, and Department of Chemistry, University of Bari, via Orabona, 4-70125 Bari (Italy)], E-mail: giovanni.bruno@ba.imip.cnr.it

    2009-03-01

    Potential of O{sub 2} remote plasmas for improving structural, morphological and optical properties of various multifunctional oxides thin films both during plasma assisted growth as well as by post-growth treatments is discussed. In particular, an O{sub 2} remote plasma metalorganic chemical vapor deposition (RP-MOCVD) route is presented for tailoring the structural, morphological and optical properties of Er{sub 2}O{sub 3} and ZnO films. Furthermore, post-growth room-temperature remote O{sub 2} plasma treatments of indium-tin-oxides (ITO) films are demonstrated to be effective in improving morphology of ITO films.

  8. Porous Aluminum Oxide and Magnesium Oxide Films Using Organic Hydrogels as Structure Matrices

    Directory of Open Access Journals (Sweden)

    Zimei Chen

    2018-03-01

    Full Text Available We describe the synthesis of mesoporous Al2O3 and MgO layers on silicon wafer substrates by using poly(dimethylacrylamide hydrogels as porogenic matrices. Hydrogel films are prepared by spreading the polymer through spin-coating, followed by photo-cross-linking and anchoring to the substrate surface. The metal oxides are obtained by swelling the hydrogels in the respective metal nitrate solutions and subsequent thermal conversion. Combustion of the hydrogel results in mesoporous metal oxide layers with thicknesses in the μm range and high specific surface areas up to 558 m2∙g−1. Materials are characterized by SEM, FIB ablation, EDX, and Kr physisorption porosimetry.

  9. Surface morphology study on chromium oxide growth on Cr films by Nd-YAG laser oxidation process

    International Nuclear Information System (INIS)

    Dong Qizhi; Hu Jiandong; Guo Zuoxing; Lian Jianshe; Chen Jiwei; Chen Bo

    2002-01-01

    Grain sized (60-100 nm) Cr 2 O 3 thin films were prepared on Cr thin film surfaces by Nd-YAG laser photothermal oxidation process. Surface morphology study showed crack-free short plateau-like oxide films formed. Increase of dislocation density after pulsed laser irradiation was found. Thin film external surfaces, grain boundaries and dislocations are main paths of laser surface oxidation. Pinning and sealing of grain boundary was the reason that deeper oxidation did not produce. Grain growth and agglomeration of Cr sub-layer yielded tensile stress on the surface Cr 2 O 3 thin film. It was the reason that short plateau-like surface morphology formed and cracks appeared sometimes. In oxygen annealing at 700 deg. C, grain boundaries were considered not to be pinned at the surface, mixture diffusion was main mechanism in growth of oxide. Compression stress development in whole film led to extrusion of grains that was the reason that multiple appearances such as pyramid-like and nutshell-like morphology formed

  10. Preparation, characterization and electrocatalytic behavior of zinc oxide/zinchexacyanoferrate and ruthenium oxide hexacyanoferrate hybrid film-modified electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Chu, H.-W.; Thangamuthu, R. [Department of Chemical Engineering and Biotechnology, National Taipei University of Technology, No. 1, Section 3, Chung-Hsiao East Road, Taipei 106, Taiwan (China); Chen, S.-M. [Department of Chemical Engineering and Biotechnology, National Taipei University of Technology, No. 1, Section 3, Chung-Hsiao East Road, Taipei 106, Taiwan (China)], E-mail: smchen78@ms15.hinet.net

    2008-02-15

    Polynuclear mixed-valent hybrid films of zinc oxide/zinchexacyanoferrate and ruthenium oxide hexacyanoferrate (ZnO/ZnHCF-RuOHCF) have been deposited on electrode surfaces from H{sub 2}SO{sub 4} solution containing Zn(NO{sub 3}){sub 2}, RuCl{sub 3} and K{sub 3}[Fe(CN){sub 6}] by potentiodynamic cycling method. Simultaneous cyclic voltammetry and electrochemical quartz crystal microbalance (EQCM) measurements demonstrate the steady growth of hybrid film. Surface morphology of hybrid film was investigated using scanning electron microscopy (SEM). Energy dispersive spectrometer (EDS) data confirm existence of zinc oxide and ruthenium oxide hexacyanoferrate (RuOHCF) in the hybrid film. The effect of type of monovalent cations on the redox behavior of hybrid film was investigated. In pure supporting electrolyte, electrochemical responses of Ru{sup II/III} redox transition occurring at negative potential region resemble with that of a surface immobilized redox couple. The electrocatalytic activity of ZnO/ZnHCF-RuOHCF hybrid film was investigated towards oxidation of epinephrine, dopamine and L-cysteine, and reduction of S{sub 2}O{sub 8}{sup 2-} and SO{sub 5}{sup 2-} as well as IO{sub 3}{sup -} using cyclic voltammetry and rotating ring disc electrode (RRDE) techniques.

  11. Thermal oxidation of Zr–Cu–Al–Ni amorphous metal thin films

    International Nuclear Information System (INIS)

    Oleksak, R.P.; Hostetler, E.B.; Flynn, B.T.; McGlone, J.M.; Landau, N.P.; Wager, J.F.; Stickle, W.F.; Herman, G.S.

    2015-01-01

    The initial stages of thermal oxidation for Zr–Cu–Al–Ni amorphous metal thin films were investigated using X-ray photoelectron spectroscopy, transmission electron microscopy and energy dispersive X-ray spectroscopy. The as-deposited films had oxygen incorporated during sputter deposition, which helped to stabilize the amorphous phase. After annealing in air at 300 °C for short times (5 min) this oxygen was found to segregate to the surface or buried interface. Annealing at 300 °C for longer times leads to significant composition variation in both vertical and lateral directions, and formation of a surface oxide layer that consists primarily of Zr and Al oxides. Surface oxide formation was initially limited by back-diffusion of Cu and Ni ( 30 min). The oxidation properties are largely consistent with previous observations of Zr–Cu–Al–Ni metallic glasses, however some discrepancies were observed which could be explained by the unique sample geometry of the amorphous metal thin films. - Highlights: • Thermal oxidation of amorphous Zr–Cu–Al–Ni thin films was investigated. • Significant short-range inhomogeneities were observed in the amorphous films. • An accumulation of Cu and Ni occurs at the oxide/metal interface. • Diffusion of Zr was found to limit oxide film growth.

  12. Controllable film densification and interface flatness for high-performance amorphous indium oxide based thin film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Ou-Yang, Wei, E-mail: OUYANG.Wei@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Mitoma, Nobuhiko; Kizu, Takio; Gao, Xu; Lin, Meng-Fang; Tsukagoshi, Kazuhito, E-mail: OUYANG.Wei@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp [International Center for Materials Nanoarchitectronics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Nabatame, Toshihide [MANA Foundry and MANA Advanced Device Materials Group, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

    2014-10-20

    To avoid the problem of air sensitive and wet-etched Zn and/or Ga contained amorphous oxide transistors, we propose an alternative amorphous semiconductor of indium silicon tungsten oxide as the channel material for thin film transistors. In this study, we employ the material to reveal the relation between the active thin film and the transistor performance with aid of x-ray reflectivity study. By adjusting the pre-annealing temperature, we find that the film densification and interface flatness between the film and gate insulator are crucial for achieving controllable high-performance transistors. The material and findings in the study are believed helpful for realizing controllable high-performance stable transistors.

  13. Structural and photoluminescent properties of a composite tantalum oxide and silicon nanocrystals embedded in a silicon oxide film

    International Nuclear Information System (INIS)

    Díaz-Becerril, T.; Herrera, V.; Morales, C.; García-Salgado, G.; Rosendo, E.; Coyopol, A.; Galeazzi, R.; Romano, R.; Nieto-Caballero, F.G.; Sarmiento, J.

    2017-01-01

    Tantalum oxide crystals encrusted in a silicon oxide matrix were synthesized by using a hot filament chemical vapor deposition system (HFCVD). A solid source composed by a mixture in different percentages of Ta 2 O 5 and silicon (Si) powders were used as reactants. The films were grown at 800 °C and 1000 °C under hydrogen ambient. The deposited films were characterized by X-ray photoelectron spectroscopy (XPS), high-resolution transmission electron microscopy (HRTEM) and photoluminescence (PL) at room temperature. From the XPS results it was confirmed the formation of a mixture of Tantalum oxide, silicon oxide and Si nanoparticles (Ta 2 O 5- SiO 2 -Si(nc)) as seen from the Si (2p) and Ta (4f) lines corresponding to Si + and Ta + states respectively. Ta 2 O 5 and Si nanocrystals (Si-NCs) embedded in the silicon oxide films were observed on HRTEM images which corroborate the XPS results. Finally the emission properties of the films exhibited a broad band from 400 to 850 nm caused by the independent PL properties of tantalum oxide and Si-NCs that compose the film. The intensity of the emissions was observed to be dependent on both temperature of deposition and the ratio Ta 2 O 5 /Si, used as initial reactants. Results from this work might supply useful data for the development of future light emitter devices.

  14. Influence of surface oxide films on the SCC of stainless steel in high temperature water

    Energy Technology Data Exchange (ETDEWEB)

    Tani, Junichi; Kato, Shunji; Hirano, Hideo [Central Research Inst. of Electric Power Industry, Komae, Tokyo (Japan). Komae Research Lab; Kushida, H.

    2000-06-01

    Effect of pre-filming conditions on the SCC susceptibility of stainless steels (SS) was investigated by SSRT and electrochemical measurement in high temperature water. The IGSCC ratio of a specimen with the oxide film formed in hydrogen-saturated water (R film specimen) was higher than that of a specimen with the oxide film formed in air-saturated water (O film specimen). When the pre-filmed specimens were coupled with a Cr-depleted SS that simulated weld-heat-affected zones, the galvanic couple between the R film specimen and Cr-depleted SS showed higher corrosion current than the couple between the O film specimen and Cr-depleted SS. The film thickness of the Cr-depleted SS was thinner in the couple with the R film specimen after the test. These results clearly show that the SCC susceptibility of R film specimen was higher than that of the O film specimen, in accordance with the SSRT results. (author)

  15. On the mechanism of self-deceleration of the thin oxide film growth

    CERN Document Server

    Mukhambetov, D G

    2002-01-01

    The objective of this work was to investigate the kinetics of the two-phase oxide film growth on the alpha-Fe surface at temperatures of 650-750 K. We experimentally determined that the film thickness (h)-time oxidation (tau) relationship in the range denoted above is a logarithmic function, whereas Cabrera and Mott's theory gives a square law of film growth. In our work, analytical treatment of experimental data was made based on this theory, but we propose that self-deceleration of the film growth is caused not by attenuation of the electric intensity in the film because of an increase of h but by the shielding influence of the space charge of diffusing ions and electrons in that oxide film. With that purpose in view, the Debye shielding distance for plasma substance state in the oxide film was taken into consideration. The logarithmic law of oxide film growth was derived. Estimated calculations of this law's parameters were made that quantitatively correspond with literature data. The results obtained were...

  16. Impedance measurements on oxide films on aluminium obtained by pulsed tensions

    Energy Technology Data Exchange (ETDEWEB)

    Belmokre, K. [Lab. of Applied Chemical, Dept. of Chemie, Skikda University, BP 26 - 21000 Skikda (Algeria); Azzouz, N. [Dept. of Industrial Chemie, Jijel University Center, 18000 Jijel (Algeria); Hannani, A. [Lab. Electrochem. Corros. Institute of Chemical USTHB Alger (Algeria); Pagetti, J. [Lab. LCMI, Franche-Comte - University UFR Sciences and Technical 16, Gray street - 25030 Besancon Cedex (France)

    2003-01-01

    We have performed this study on oxide films sealed or not in boiling water. The films are first obtained on type 1050 A aluminium substrate by pulsed tensions anodizing technique, in a sulfuric acid solution. Afterwards the, Electrochemical Impedance Spectroscopy (EIS) is employed to appreciate the films behaviour in a neutral solution of 3.5% K{sub 2}SO{sub 4}, in which the interface processes interest only the ageing phenomenon of the oxide films and not their corrosion. We have also attempted a correlation between pulse parameters of anodization and the electrical parameters characterizing these films. The sealing influence on ageing has been studied as well. For all films, ageing is appreciated using impedance diagrams evolution versus time. The results show: - the existence of two capacitive loops confirming the presence of two oxide layers characteristic of oxide films obtained in a sulfuric acid medium. The first loop, at high frequencies, is related to the external porous layer and the second one, at lower frequencies, is related to the internal barrier layer. - the thickness of the barrier layer varies between 25 and 40 nm in relation with the electrical pulse parameters. - the sealing acts favorably against anodic oxide films ageing. (Abstract Copyright [2003], Wiley Periodicals, Inc.)

  17. Growth and etching characteristics of gallium oxide thin films by pulsed laser deposition

    International Nuclear Information System (INIS)

    Ou, Sin-Liang; Wuu, Dong-Sing; Fu, Yu-Chuan; Liu, Shu-Ping; Horng, Ray-Hua; Liu, Lei; Feng, Zhe-Chuan

    2012-01-01

    Highlights: ► The β-Ga2O3 thin films are prepared by pulsed laser deposition. ► The substrate temperature affects the structural, optical and etching properties of the grown films. ► The optical transmittance and band gap of the films increased with increasing the substrate temperature. ► The etching treatments for gallium oxide are performed in 49 mol% HF solution at room temperature. ► The gallium oxide thin film grown at 400 °C has the highest etching rate of 490 nm s −1 . - Abstract: The gallium oxide films were deposited on (0 0 1) sapphire at various substrate temperatures from 400 to 1000 °C by pulsed laser deposition using a KrF excimer laser. The etching treatments for as-grown gallium oxide were performed in a 49 mol% HF solution at room temperature. The structural, optical and etching properties of the grown films were investigated in terms of high resolution X-ray diffraction, optical transmittance, atomic force microscopy, and X-ray photoelectron spectroscopy. The phase transition from amorphous to polycrystalline β-Ga 2 O 3 structure was observed with increasing growth temperature. From the optical transmittance measurements, the films grown at 550–1000 °C exhibit a clear absorption edge at deep ultraviolet region around 250–275 nm wavelength. It was found that the optical band gap of gallium oxide films increased from 4.56 to 4.87 eV when the substrate temperature increased from 400 to 1000 °C. As the substrate temperature increases, the crystallinity of gallium oxide film is enhanced and the etching rate is decreased. The high etching rate of 490 nm s −1 for gallium oxide film grown at 400 °C could be due to its amorphous phase, which is referred to higher void ratio and looser atomic structure.

  18. Anodic luminescence, structural, photoluminescent, and photocatalytic properties of anodic oxide films grown on niobium in phosphoric acid

    Energy Technology Data Exchange (ETDEWEB)

    Stojadinović, Stevan, E-mail: sstevan@ff.bg.ac.rs [University of Belgrade, Faculty of Physics, Studentski trg 12-16, 11000 Belgrade (Serbia); Tadić, Nenad [University of Belgrade, Faculty of Physics, Studentski trg 12-16, 11000 Belgrade (Serbia); Radić, Nenad [University of Belgrade, Institute of Chemistry, Technology and Metallurgy, Department of Catalysis and Chemical Engineering, Njegoševa 12, 11000 Belgrade (Serbia); Stefanov, Plamen [Institute of General and Inorganic Chemistry, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Block 11, 1113 Sofia (Bulgaria); Grbić, Boško [University of Belgrade, Institute of Chemistry, Technology and Metallurgy, Department of Catalysis and Chemical Engineering, Njegoševa 12, 11000 Belgrade (Serbia); Vasilić, Rastko [University of Belgrade, Faculty of Physics, Studentski trg 12-16, 11000 Belgrade (Serbia)

    2015-11-15

    Graphical abstract: - Highlights: • Anodic luminescence is correlated to the existence of morphological defects in the oxide. • Spectrum under spark discharging reveals only oxygen and hydrogen lines. • Oxide films formed under spark discharging are crystallized and composed of Nb{sub 2}O{sub 5}. • Photocatalytic activity and photoluminescence of Nb{sub 2}O{sub 5} films increase with time. - Abstract: This article reports on properties of oxide films obtained by anodization of niobium in phosphoric acid before and after the dielectric breakdown. Weak anodic luminescence of barrier oxide films formed during the anodization of niobium is correlated to the existence of morphological defects in the oxide layer. Small sized sparks generated by dielectric breakdown of formed oxide film cause rapid increase of luminescence intensity. The luminescence spectrum of obtained films on niobium under spark discharging is composed of continuum radiation and spectral lines caused by electronic spark discharging transitions in oxygen and hydrogen atoms. Oxide films formed before the breakdown are amorphous, while after the breakdown oxide films are partly crystalline and mainly composed of Nb{sub 2}O{sub 5} hexagonal phase. The photocatalytic activity of obtained oxide films after the breakdown was investigated by monitoring the degradation of methyl orange. Increase of the photocatalytic activity with time is related to an increase of oxygen vacancy defects in oxide films formed during the process. Also, higher concentration of oxygen vacancy defects in oxide films results in higher photoluminescence intensity.

  19. Thermally evaporated mechanically hard tin oxide thin films for opto-electronic apllications

    Energy Technology Data Exchange (ETDEWEB)

    Tripathy, Sumanta K.; Rajeswari, V. P. [Centre for Nano Science and Technology, GVP College of Engineering (Autonomous), Visakhapatnam- 530048 (India)

    2014-01-28

    Tungsten doped tin oxide (WTO) and Molybdenum doped tin oxide (MoTO) thin film were deposited on corn glass by thermal evaporation method. The films were annealed at 350°C for one hour. Structural analysis using Xray diffraction data shows both the films are polycrystalline in nature with monoclinic structure of tin oxide, Sn{sub 3}O{sub 4}, corresponding to JCPDS card number 01-078-6064. SEM photograph showed that both the films have spherical grains with size in the range of 20–30 nm. Compositional analysis was carried out using EDS which reveals the presence of Sn, O and the dopant Mo/W only thereby indicating the absence of any secondary phase in the films. The films are found to contain nearly 6 wt% of Mo, 8 wt% of W as dopants respectively. The transmission pattern for both the films in the spectral range 200 – 2000 nm shows that W doping gives a transparency of nearly 80% from 380 nm onwards while Mo doping has less transparency of 39% at 380nm. Film hardness measurement using Triboscope shows a film hardness of about 9–10 GPa for both the films. It indicates that W or M doping in tin oxide provides the films the added advantage of withstanding the mechanical wear and tear due to environmental fluctuations By optimizing the optical and electrical properties, W/Mo doped tin oxide films may be explored as window layers in opto-electronic applications such as solar cells.

  20. Thin films of metal oxides on metal single crystals: Structure and growth by scanning tunneling microscopy

    International Nuclear Information System (INIS)

    Galloway, H.C.

    1995-12-01

    Detailed studies of the growth and structure of thin films of metal oxides grown on metal single crystal surfaces using Scanning Tunneling Microscopy (STM) are presented. The oxide overlayer systems studied are iron oxide and titanium oxide on the Pt(III) surface. The complexity of the metal oxides and large lattice mismatches often lead to surface structures with large unit cells. These are particularly suited to a local real space technique such as scanning tunneling microscopy. In particular, the symmetry that is directly observed with the STM elucidates the relationship of the oxide overlayers to the substrate as well as distinguishing, the structures of different oxides

  1. Oxidant-Dependent Thermoelectric Properties of Undoped ZnO Films by Atomic Layer Deposition

    KAUST Repository

    Kim, Hyunho

    2017-02-27

    Extraordinary oxidant-dependent changes in the thermoelectric properties of undoped ZnO thin films deposited by atomic layer deposition (ALD) have been observed. Specifically, deionized water and ozone oxidants are used in the growth of ZnO by ALD using diethylzinc as a zinc precursor. No substitutional atoms have been added to the ZnO films. By using ozone as an oxidant instead of water, a thermoelectric power factor (σS) of 5.76 × 10 W m K is obtained at 705 K for undoped ZnO films. In contrast, the maximum power factor for the water-based ZnO film is only 2.89 × 10 W m K at 746 K. Materials analysis results indicate that the oxygen vacancy levels in the water- and ozone-grown ZnO films are essentially the same, but the difference comes from Zn-related defects present in the ZnO films. The data suggest that the strong oxidant effect on thermoelectric performance can be explained by a mechanism involving point defect-induced differences in carrier concentration between these two oxides and a self-compensation effect in water-based ZnO due to the competitive formations of both oxygen and zinc vacancies. This strong oxidant effect on the thermoelectric properties of undoped ZnO films provides a pathway to improve the thermoelectric performance of this important material.

  2. Effect of Target Density on Microstructural, Electrical, and Optical Properties of Indium Tin Oxide Thin Films

    Science.gov (United States)

    Zhu, Guisheng; Zhi, Li; Yang, Huijuan; Xu, Huarui; Yu, Aibing

    2012-09-01

    In this paper, indium tin oxide (ITO) targets with different densities were used to deposit ITO thin films. The thin films were deposited from these targets at room temperature and annealed at 750°C. Microstructural, electrical, and optical properties of the as-prepared films were studied. It was found that the target density had no effect on the properties or deposition rate of radiofrequency (RF)-sputtered ITO thin films, different from the findings for direct current (DC)-sputtered films. Therefore, when using RF sputtering, the target does not require a high density and may be reused.

  3. Growth and characterization of indium tin oxide thin films deposited on PET substrates

    International Nuclear Information System (INIS)

    Lee, Jaehyeong; Jung, Hakkee; Lee, Jongin; Lim, Donggun; Yang, Keajoon; Yi, Junsin; Song, Woo-Chang

    2008-01-01

    Transparent and conductive indium tin oxide (ITO) thin films were deposited onto polyethylene terephthalate (PET) by d.c. magnetron sputtering as the front and back electrical contact for applications in flexible displays and optoelectronic devices. In addition, ITO powder was used for sputter target in order to reduce the cost and time of the film formation processes. As the sputtering power and pressure increased, the electrical conductivity of ITO films decreased. The films were increasingly dark gray colored as the sputtering power increased, resulting in the loss of transmittance of the films. When the pressure during deposition was higher, however, the optical transmittance improved at visible region of light. ITO films deposited onto PET have shown similar optical transmittance and electrical resistivity, in comparison with films onto glass substrate. High quality films with resistivity as low as 2.5 x 10 -3 Ω cm and transmittance over 80% have been obtained on to PET substrate by suitably controlling the deposition parameters

  4. Vanadium Oxide Thin Films Alloyed with Ti, Zr, Nb, and Mo for Uncooled Infrared Imaging Applications

    Science.gov (United States)

    Ozcelik, Adem; Cabarcos, Orlando; Allara, David L.; Horn, Mark W.

    2013-05-01

    Microbolometer-grade vanadium oxide (VO x ) thin films with 1.3 Nb, Mo, and Zr using a second gun and radiofrequency (RF) reactive co-sputtering to probe the effects of the transition metals on the film charge transport characteristics. The results reveal that the temperature coefficient of resistance (TCR) and resistivity are unexpectedly similar for alloyed and unalloyed films up to alloy compositions in the ˜20 at.% range. Analysis of the film structures for the case of the 17% Nb-alloyed film by glancing-angle x-ray diffraction and transmission electron microscopy shows that the microstructure remains even with the addition of high concentrations of alloy metal, demonstrating the robust character of the VO x films to maintain favorable electrical transport properties for bolometer applications. Postdeposition thermal annealing of the alloyed VO x films further reveals improvement of electrical properties compared with unalloyed films, indicating a direction for further improvements in the materials.

  5. Fabrication of Au/graphene oxide/Ag sandwich structure thin film and its tunable energetics and tailorable optical properties

    OpenAIRE

    Ruijin Hong; Jialin Ji; Chunxian Tao; Daohua Zhang; Dawei Zhang

    2017-01-01

    Au/graphene oxide/Ag sandwich structure thin film was fabricated. The effects of graphene oxide (GO) and bimetal on the structure and optical properties of metal silver films were investigated by X-ray diffraction (XRD), optical absorption, and Raman intensity measurements, respectively. Compared to silver thin film, Au/graphene oxide/Ag sandwich structure composite thin films were observed with wider optical absorption peak and enhanced absorption intensity. The Raman signal for Rhodamine B ...

  6. Structure, stability and electrochromic properties of polyaniline film covalently bonded to indium tin oxide substrate

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Wenzhi, E-mail: zhangwz@xatu.edu.cn [Key Laboratory for Photoelectric Functional Materials and Devices of Shaanxi Province, School of Materials and Chemical Engineering, Xi’an Technological University, Xi’an 710021 (China); Ju, Wenxing; Wu, Xinming; Wang, Yan; Wang, Qiguan; Zhou, Hongwei; Wang, Sumin [Key Laboratory for Photoelectric Functional Materials and Devices of Shaanxi Province, School of Materials and Chemical Engineering, Xi’an Technological University, Xi’an 710021 (China); Hu, Chenglong [Key Laboratory of Optoelectronic Chemical Materials and Devices of Ministry of Education, School of Chemistry and Environmental Engineering, Jianghan University, Wuhan 430056 (China)

    2016-03-30

    Graphical abstract: A chemical bonding approach was proposed to prepare the PANI film covalently bonded to ITO substrate and the film exhibited high electrochemical activities and stability compared with that obtained by conventional film-forming approach. - Highlights: • The PANI film covalently bonded to ITO substrate was prepared using ABPA as modifier. • The oxidative potentials of the obtained PANI film were decreased. • The obtained PANI film exhibits high electrochemical activities and stability. - Abstract: Indium tin oxide (ITO) substrate was modified with 4-aminobenzylphosphonic acid (ABPA), and then the polyaniline (PANI) film covalently bonded to ITO substrate was prepared by the chemical oxidation polymerization. X-ray photoelectron spectroscopy (XPS), attenuated total reflection infrared (ATR-IR) spectroscopy, and atomic force microscopy (AFM) measurements demonstrated that chemical binding was formed between PANI and ABPA-modified ITO surface, and the maximum thickness of PANI layer is about 30 nm. The adhesive strength of PANI film on ITO substrate was tested by sonication. It was found that the film formed on the modified ITO exhibited a much better stability than that on bare one. Cyclic voltammetry (CV) and UV–vis spectroscopy measurements indicated that the oxidative potentials of PANI film on ABPA-modified ITO substrate were decreased and the film exhibited high electrochemical activities. Moreover, the optical contrast increased from 0.58 for PANI film (without ultrasound) to 1.06 for PANI film (after ultrasound for 60 min), which had an over 83% enhancement. The coloration time was 20.8 s, while the bleaching time was 19.5 s. The increase of electrochromic switching time was due to the lower ion diffusion coefficient of the large cation of (C{sub 4}H{sub 9}){sub 4}N{sup +} under the positive and negative potentials as comparison with the small Li{sup +} ion.

  7. Preparation of reduced graphene oxide/gelatin composite films with reinforced mechanical strength

    International Nuclear Information System (INIS)

    Wang, Wenchao; Wang, Zhipeng; Liu, Yu; Li, Nan; Wang, Wei; Gao, Jianping

    2012-01-01

    Highlights: ► We used and compared different proportion of gelatin and chitosan as reducing agents. ► The mechanical properties of the films are investigated, especially the wet films. ► The cell toxicity of the composite films as biomaterial is carried out. ► The water absorption capabilities of the composite films also studied. -- Abstract: Graphene oxide (GO) was reduced by chitosan/gelatin solution and added to gelatin (Gel) to fabricate reduced graphene oxide/gelatin (RGO/Gel) films by a solvent-casting method using genipin as cross-linking agent. The structure and properties of the films were characterized by scanning electron microscopy (SEM), X-ray powder diffraction (XRD), thermogravimetric analysis (TGA) and UV–vis spectroscopy. The addition of RGO increased the tensile strength of the RGO/Gel films in both dry and wet states, but decreased their elongation at break. The incorperation of RGO also decreased the swelling ability of the films in water. Cell cultures were carried out in order to test the cytotoxicity of the films. The cells grew and reproduced well on the RGO/Gel films, indicating that the addition of RGO has no negative effect on the compatibility of the gelatin. Therefore, the reduced graphene oxide/gelatin composite is a promising biomaterial with excellent mechanical properties and good cell compatibility.

  8. Inhibitory Effect Evaluation of Glycerol-Iron Oxide Thin Films on Methicillin-Resistant Staphylococcus aureus

    Directory of Open Access Journals (Sweden)

    C. L. Popa

    2015-01-01

    Full Text Available The main purpose of this study was to evaluate the inhibitory effect of glycerol- iron oxide thin films on Methicillin-Resistant Staphylococcus aureus (MRSA. Our results suggest that glycerol-iron oxide thin films could be used in the future for various biomedical and pharmaceutical applications. The glycerol-iron oxide thin films have been deposited by spin coating method on a silicon (111 substrate. The structural properties have been studied by X-ray diffraction (XRD and scanning electron spectroscopy (SEM. The XRD investigations of the prepared thin films demonstrate that the crystal structure of glycerol-iron oxide nanoparticles was not changed after spin coating deposition. On the other hand, the SEM micrographs suggest that the size of the glycerol-iron oxide microspheres increased with the increase of glycerol exhibiting narrow size distributions. The qualitative depth profile of glycerol-iron oxide thin films was identified by glow discharge optical emission spectroscopy (GDOES. The GDOES spectra revealed the presence of the main elements: Fe, O, C, H, and Si. The antimicrobial activity of glycerol-iron oxide thin films was evaluated by measuring the zone of inhibition. After 18 hours of incubation at 37°C, the diameters of the zones of complete inhibition have been measured obtaining values around 25 mm.

  9. Cholesterol photosensitised oxidation of horse meat slices stored under different packaging films.

    Science.gov (United States)

    Boselli, Emanuele; Rodriguez-Estrada, Maria Teresa; Ferioli, Federico; Caboni, Maria Fiorenza; Lercker, Giovanni

    2010-07-01

    The effect of the type of packaging film (transparent vs. light-protecting red film) was evaluated on the formation of cholesterol oxidation products (COPs) in refrigerated horse meat slices stored in retail conditions under light exposure for 8h. In meat wrapped with a transparent film, COPs increased from 233 (control) to 317 microg/g of fat, whereas the red film delayed cholesterol oxidation and offered protection against COPs formation, since COPs decreased from 173 (control) to 139 microg/g of fat after 8h of light exposure. In addition, light opened the epoxy ring and led to the formation of triol, which was actually absent at T(0.) A proper packaging film may represent a useful strategy to retard oxidative degradation in a light-sensitive, high pigment- and fat-containing food, such as horse meat. Copyright 2010. Published by Elsevier Ltd.

  10. Transparent indium zinc oxide thin films used in photovoltaic cells based on polymer blends

    International Nuclear Information System (INIS)

    Besleaga, Cristina; Ion, L.; Ghenescu, Veta; Socol, G.; Radu, A.; Arghir, Iulia; Florica, Camelia; Antohe, S.

    2012-01-01

    Indium zinc oxide (IZO) thin films were obtained using pulsed laser deposition. The samples were prepared by ablation of targets with In concentrations, In/(In + Zn), of 80 at.%, at low substrate temperatures under reactive atmosphere. IZO films were used as transparent electrodes in polymer-based – poly(3-hexylthiophene) and 1-(3-methoxycarbonyl)-propyl-1-phenyl-(6,6)C61 1:1 blend – photovoltaic cells. The action spectra measurements revealed that IZO-based photovoltaic structures have performances comparable with those using indium–tin–oxide as transparent electrode. - Highlights: ► Indium zinc oxide films were grown by pulsed laser deposition at room temperature. ► The films had large free carrier density and reasonably high mobility. ► These films fit for transparent electrodes in polymer-based photovoltaic cells.

  11. Effects of process parameters on sheet resistance uniformity of fluorine-doped tin oxide thin films

    Science.gov (United States)

    Hudaya, Chairul; Park, Ji Hun; Lee, Joong Kee

    2012-01-01

    An alternative indium-free material for transparent conducting oxides of fluorine-doped tin oxide [FTO] thin films deposited on polyethylene terephthalate [PET] was prepared by electron cyclotron resonance - metal organic chemical vapor deposition [ECR-MOCVD]. One of the essential issues regarding metal oxide film deposition is the sheet resistance uniformity of the film. Variations in process parameters, in this case, working and bubbler pressures of ECR-MOCVD, can lead to a change in resistance uniformity. Both the optical transmittance and electrical resistance uniformity of FTO film-coated PET were investigated. The result shows that sheet resistance uniformity and the transmittance of the film are affected significantly by the changes in bubbler pressure but are less influenced by the working pressure of the ECR-MOCVD system.

  12. Vanadium oxide thin films deposited on silicon dioxide buffer layers by magnetron sputtering

    International Nuclear Information System (INIS)

    Chen Sihai; Ma Hong; Wang Shuangbao; Shen Nan; Xiao Jing; Zhou Hao; Zhao Xiaomei; Li Yi; Yi Xinjian

    2006-01-01

    Thin films made by vanadium oxide have been obtained by direct current magnetron sputtering method on SiO 2 buffer layers. A detailed electrical and structural characterization has been performed on the deposited films by four-point probe method and scanning electron microscopy (SEM). At room temperature, the four-point probe measurement result presents the resistance of the film to be 25 kU/sheet. The temperature coefficient of resistance is - 2.0%/K. SEM image indicates that the vanadium oxide exhibits a submicrostructure with lamella size ranging from 60 nm to 300 nm. A 32 x 32-element test microbolometer was fabricated based on the deposited thin film. The infrared response testing showed that the response was 200 mV. The obtained results allow us to conclude that the vanadium oxide thin films on SiO 2 buffer layers is suitable for uncooled focal plane arrays applications

  13. Composition and corrosion properties of high-temperature oxide films on steel type 18-10

    International Nuclear Information System (INIS)

    Vakulenko, B.F.; Morozov, O.N.; Chernysheva, M.V.

    1985-01-01

    The composition and propeties of oxide films, formed in the process of tube production of steel type 18-10, as well as the behaviour of the steels coated with oxide films under operating conditions of NPP heat-exchange equipment at the 20-300 deg C temperatures are determined. It is found, that the films have a good adhesion to the steel surface and repeat the metal structure without interfering with, the surface defect determination. Introduction of the NaNO 2 corrosion inhibitor decreases the film destruction rate to the level of the base metal corrosion. It is found acceptable to use tubes of steel 18-10 coated with dense oxide films in the heat-exchange and water supply systems of NPP

  14. The Preparation and Property of Graphene /Tin Oxide Transparent Conductive Film

    Directory of Open Access Journals (Sweden)

    SUN Tao

    2017-02-01

    Full Text Available Graphene doped tin oxide composites were prepared with SnCIZ·2HZ 0 and graphene oxide as raw materials with sol-gel method and then spincoated on the quartz glass to manufacture a new transparent conductive film. The composite film was characterized with X-ray diffraction(XRDand scanning electron microscopy(SEM analysis. XRD results show that the graphene oxide was successfully prepared with Hummers method. The graphene layers and particulate SnOZ can be clearly observed in SEM photos. The transmittance and conductivity of the thin films were tested with ultraviolet visible spectrophotometer and Hall effect measurement. The results show that the transmittivity of composite film in visible region is more than 90% and surface square resistance is 41 S2/口.The graphene/ SnOZ film exhibits a higher performance in transparence and conductivity than commercial FTO glass.

  15. Spark counting technique of alpha tracks on an aluminium oxide film

    International Nuclear Information System (INIS)

    Morishima, Hiroshige; Koga, Taeko; Niwa, Takeo; Kawai, Hiroshi

    1984-01-01

    We have tried to use aluminium oxide film as a neutron detector film with a spark counter for neutron monitoring in the mixed field of neutron and gamma-rays near a reactor. The merits of this method are that (1) aluminium oxide is good electric insulator, (2) any desired thickness of the film can be prepared, (3) chemical etching of the thin film can be dispensed with. The relation between spark counts and numbers of alpha-particles which entered the aluminium oxide film 1 μm thick was linear in the range of 10 5 -10 7 alpha-particles. The sensitivity(ratio of the spark counts to irradiated numbers of alpha-particles) was approximately 10 -3 . (author)

  16. Assembly of tantalum porous films with graded oxidation profile from size-selected nanoparticles

    Science.gov (United States)

    Singh, Vidyadhar; Grammatikopoulos, Panagiotis; Cassidy, Cathal; Benelmekki, Maria; Bohra, Murtaza; Hawash, Zafer; Baughman, Kenneth W.; Sowwan, Mukhles

    2014-05-01

    Functionally graded materials offer a way to improve the physical and chemical properties of thin films and coatings for different applications in the nanotechnology and biomedical fields. In this work, design and assembly of nanoporous tantalum films with a graded oxidation profile perpendicular to the substrate surface are reported. These nanoporous films are composed of size-selected, amorphous tantalum nanoparticles, deposited using a gas-aggregated magnetron sputtering system, and oxidized after coalescence, as samples evolve from mono- to multi-layered structures. Molecular dynamics computer simulations shed light on atomistic mechanisms of nanoparticle coalescence, which govern the films porosity. Aberration-corrected (S) TEM, GIXRD, AFM, SEM, and XPS were employed to study the morphology, phase and oxidation profiles of the tantalum nanoparticles, and the resultant films.

  17. Transpassive Dissolution of Copper and Rapid Formation of Brilliant Colored Copper Oxide Films

    Science.gov (United States)

    Fredj, Narjes; Burleigh, T. David; New Mexico Tech Team

    2014-03-01

    This investigation describes an electrochemical technique for growing adhesive copper oxide films on copper with attractive colors ranging from gold-brown to pearl with intermediate colors from red violet to gold green. The technique consists of anodically dissolving copper at transpassive potentials in hot sodium hydroxide, and then depositing brilliant color films of Cu2O onto the surface of copper after the anodic potential has been turned off. The color of the copper oxide film depends on the temperature, the anodic potential, the time t1 of polarization, and the time t2, which is the time of immersion after potential has been turned off. The brilliant colored films were characterized using glancing angle x-ray diffraction, and the film was found to be primarily Cu2O. Cyclic voltammetry, chronopotentiometry, scanning electron microscopy, and x-ray photoelectron spectroscopy were also used to characterize these films.

  18. RBS and NRA of cobalt oxide thin films prepared by the sol-gel process

    International Nuclear Information System (INIS)

    Andrade, E.; Huerta, L.; Pineda, J.C.; Zavala, E.P.; Barrera, E.; Rocha, M. F.; Vargas, C.A.

    2001-01-01

    This work presents a study of cobalt oxide thin films produced by the sol-gel process on aluminum and glass substrates. These films have been analyzed using two ion beam analysis (IBA) techniques: a) a standard RBS 4 He 2 MeV and b) nuclear reaction analysis (NRA) using a 1 MeV deuterium beam. The 12 C(d,p 0 ) 13 C nuclear reaction provides information that carbon is incorporated into the film structure, which could be associated to the sinterization film process. Other film measurements such as optical properties, XRD, and SEM were performed in order to complement the IBA analysis. The results show that cobalt oxide film coatings prepared by this technique have good optical properties as solar absorbers and potential uses in solar energy applications

  19. Non-hydrolytic metal oxide films for perovskite halide overcoating and stabilization

    Science.gov (United States)

    Martinson, Alex B.; Kim, In Soo

    2017-09-26

    A method of protecting a perovskite halide film from moisture and temperature includes positioning the perovskite halide film in a chamber. The chamber is maintained at a temperature of less than 200 degrees Celsius. An organo-metal compound is inserted into the chamber. A non-hydrolytic oxygen source is subsequently inserted into the chamber. The inserting of the organo-metal compound and subsequent inserting of the non-hydrolytic oxygen source into the chamber is repeated for a predetermined number of cycles. The non-hydrolytic oxygen source and the organo-metal compound interact in the chamber to deposit a non-hydrolytic metal oxide film on perovskite halide film. The non-hydrolytic metal oxide film protects the perovskite halide film from relative humidity of greater than 35% and a temperature of greater than 150 degrees Celsius, respectively.

  20. CO2 gas sensitivity of sputtered zinc oxide thin films

    Indian Academy of Sciences (India)

    TECS

    Gas sensitivity; ZnO; sputtering; XRD patterns; structure; thin films. 1. Introduction. Because zinc ... voltage and absorption properties of those fabricated films have been ... tations are useful in many physical applications. The in- plane (Hegde ...

  1. Reduction of a thin chromium oxide film on Inconel surface upon treatment with hydrogen plasma

    Energy Technology Data Exchange (ETDEWEB)

    Vesel, Alenka, E-mail: alenka.vesel@guest.arnes.si [Jozef Stefan Institute, Jamova cesta 39, 1000 Ljubljana (Slovenia); Mozetic, Miran [Jozef Stefan Institute, Jamova cesta 39, 1000 Ljubljana (Slovenia); Balat-Pichelin, Marianne [PROMES-CNRS Laboratory, 7 Rue du four solaire, 66120 Font Romeu Odeillo (France)

    2016-11-30

    Highlights: • Oxidized Inconel alloy was exposed to hydrogen at temperatures up to 1500 K. • Oxide reduction in hydrogen plasma started at approximately 1300 K. • AES depth profiling revealed complete reduction of oxides in plasma. • Oxides were not reduced, if the sample was heated just in hydrogen atmosphere. • Surface of reduced Inconel preserved the same composition as the bulk material. - Abstract: Inconel samples with a surface oxide film composed of solely chromium oxide with a thickness of approximately 700 nm were exposed to low-pressure hydrogen plasma at elevated temperatures to determine the suitable parameters for reduction of the oxide film. The hydrogen pressure during treatment was set to 60 Pa. Plasma was created by a surfaguide microwave discharge in a quartz glass tube to allow for a high dissociation fraction of hydrogen molecules. Auger electron depth profiling (AES) was used to determine the decay of the oxygen in the surface film and X-ray diffraction (XRD) to measure structural modifications. During hydrogen plasma treatment, the oxidized Inconel samples were heated to elevated temperatures. The reduction of the oxide film started at temperatures of approximately 1300 K (considering the emissivity of 0.85) and the oxide was reduced in about 10 s of treatment as revealed by AES. The XRD showed sharper substrate peaks after the reduction. Samples treated in hydrogen atmosphere under the same conditions have not been reduced up to approximately 1500 K indicating usefulness of plasma treatment.

  2. Solid Oxide Fuel Cell Based Upon Colloidal Deposition of Thin Films for Lower Temperature Operation (Preprint)

    National Research Council Canada - National Science Library

    Reitz, T. L; Xiao, H

    2006-01-01

    In order to reduce the operating temperature of solid oxide fuel cells (SOFCs), anode-supported cells incorporating thin film electrolytes in conjunction with anode/electrolyte and cathode/electrolyte interlayers were studied...

  3. Preparation of polyvinyl alcohol graphene oxide phosphonate film and research of thermal stability and mechanical properties.

    Science.gov (United States)

    Li, Jihui; Song, Yunna; Ma, Zheng; Li, Ning; Niu, Shuai; Li, Yongshen

    2018-05-01

    In this article, flake graphite, nitric acid, peroxyacetic acid and phosphoric acid are used to prepare graphene oxide phosphonic and phosphinic acids (GOPAs), and GOPAs and polyvinyl alcohol (PVA) are used to synthesize polyvinyl alcohol graphene oxide phosphonate and phosphinate (PVAGOPs) in the case of faint acidity and ultrasound irradiation, and PVAGOPs are used to fabricate PVAGOPs film, and the structure and morphology of GOPAs, PVAGOPs and PVAGOPs film are characterized, and the thermal stability and mechanical properties of PVAGOPs film are investigated. Based on these, it has been proved that GOPAs consist of graphene oxide phosphonic acid and graphene oxide phosphinic acid, and there are CP covalent bonds between them, and PVAGOPs are composed of GOPAs and PVA, and there are six-member lactone rings between GOPAs and PVA, and the thermal stability and mechanical properties of PVAGOPs film are improved effectively. Copyright © 2018 Elsevier B.V. All rights reserved.

  4. High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric

    KAUST Repository

    Nayak, Pradipta K.

    2013-07-18

    We report high performance solution-deposited indium oxide thin film transistors with field-effect mobility of 127 cm2/Vs and an Ion/Ioff ratio of 106. This excellent performance is achieved by controlling the hydroxyl group content in chemically derived aluminum oxide (AlOx) thin-film dielectrics. The AlOx films annealed in the temperature range of 250–350 °C showed higher amount of Al-OH groups compared to the films annealed at 500 °C, and correspondingly higher mobility. It is proposed that the presence of Al-OH groups at the AlOx surface facilitates unintentional Al-doping and efficient oxidation of the indium oxide channel layer, leading to improved device performance.

  5. High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric

    KAUST Repository

    Nayak, Pradipta K.; Hedhili, Mohamed N.; Cha, Dong Kyu; Alshareef, Husam N.

    2013-01-01

    We report high performance solution-deposited indium oxide thin film transistors with field-effect mobility of 127 cm2/Vs and an Ion/Ioff ratio of 106. This excellent performance is achieved by controlling the hydroxyl group content in chemically derived aluminum oxide (AlOx) thin-film dielectrics. The AlOx films annealed in the temperature range of 250–350 °C showed higher amount of Al-OH groups compared to the films annealed at 500 °C, and correspondingly higher mobility. It is proposed that the presence of Al-OH groups at the AlOx surface facilitates unintentional Al-doping and efficient oxidation of the indium oxide channel layer, leading to improved device performance.

  6. Effect of Different Post Deposition Annealing Treatments on Properties of Zinc Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Arti Arora

    2010-06-01

    Full Text Available Two different post deposition annealing atmospheres of oxygen and forming gas have been investigated for the improvement of rf sputtered zinc oxide thin films. The results show that type of atmosphere (oxidant o reduction plays an important role in the changes observed in structural, electrical and optical properties. It has been found that the structural properties of rf sputtered zinc oxide films improve in all the annealing environments. The intensity and grain size increases as the annealing temperature increases. It has been found that films become stress free at lowest temperature in oxygen as compare to forming gas annealing. The zinc oxide films annealed in oxygen shows sufficient resistivity associated to high transmittance (83 % characteristics required for MEMS based acoustic devices.

  7. Hard X-ray photoemission spectroscopy of transition-metal oxide thin films and interfaces

    International Nuclear Information System (INIS)

    Wadati, H.; Fujimori, A.

    2013-01-01

    Highlights: •Photoemission spectroscopy is a powerful technique to study the electronic structures of transition-metal oxides. •Hard X-ray photoemission spectroscopy (HXPES) is a new type of photoemission spectroscopy which can probe bulk states. •HXPES is very suitable for studying oxide thin films such as the composition dependence and the film thickness dependence. -- Abstract: Photoemission spectroscopy is a powerful experimental technique to study the electronic structures of solids, especially of transition-metal oxides. Recently, hard X-ray photoemission spectroscopy (HXPES) has emerged as a more relevant experimental technique to obtain clear information about bulk states. Here, we describe how HXPES can be conveniently applied to study the interesting subjects on oxide thin films such as the composition dependence and the film thickness dependence of the electronic structures and the interfacial electronic structure of multilayers

  8. Fabrication of birnessite-type layered manganese oxide films for super capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Y.K.; Dorval-Douville, G.; Favier, F. [Montpellier-2 Univ., LAMMI, UMR CNRS 5072, 34 (France)

    2004-07-01

    Birnessite-type layered manganese oxide films were anodically deposited at the surface of an inexpensive stainless steel. MnSO{sub 4} plating solutions were used at various potentials and for various durations. X-ray diffraction and scanning electron microscopy were used to examine the material structure and surface morphologies of obtained manganese oxide films. The capacitive characteristics and stability of these oxides were systematically investigated by means of cyclic voltammetry method in aqueous electrolytes. Deposition conditions affected the oxides structure and morphologies, and consequently greatly affected their electrochemical capacitance performance. (authors)

  9. Hardness enhancement and oxidation resistance of nanocrystalline TiN/Mo xC multilayer films

    International Nuclear Information System (INIS)

    Liu, Q.; Wang, X.P.; Liang, F.J.; Wang, J.X.; Fang, Q.F.

    2006-01-01

    In this paper the influence of the layer's microstructure on the hardness enhancement in multilayer nanocrystalline films and the oxidation resistance are studied. The TiN/Mo x C multilayer films at different modulation period, and Mo x C and TiN monolayer films were deposited on the (0 0 1) silicon wafers and molybdenum sheets by rf and dc magnetron sputtering. The monolayer TiN films with a thickness of about 2 μm are of pure face-center cubic TiN phase, while the monolayer Mo x C films consist of two phases, one of which is body-center cubic Mo and the other is hexagonal Mo 2 C as determined by XRD. The coarse columnar grains of about 200 nm in the monolayer TiN films become much smaller or disappear in the multilayer films. The hardness enhancement of the multilayer films takes place at the modulation period of 320 nm, which can reach to 26 GPa and is much higher than the values of Mo x C and TiN monolayer films. This enhancement in hardness can be explained as the decrease in the size and/or disappearance of columnar grains in the TiN layer. The Young's modulus in the temperature range from 100 to 400 deg. C increases with decreasing modulation period. It is found that about 100 nm thick TiN films can increase largely the oxidation resistance of Mo x C films

  10. Mesoscopic Iron-Oxide Nanorod Polymer Nanocomposite Films

    Science.gov (United States)

    Ferrier, Robert; Ohno, Kohji; Composto, Russell

    2012-02-01

    Dispersion of nanostructures in polymer matrices is required in order to take advantage of the unique properties of the nano-sized filler. This work investigates the dispersion of mesoscopic (200 nm long) iron-oxide rods (FeNRs) grafted with poly(methyl methacrylate) (PMMA) brushes having molecular weights (MWs) of 3.7K, 32K and 160K. These rods were then dispersed in either a poly(methyl methacrylate) or poly(oxyethylene) (PEO) matrix film so that the matrix/brush interaction is either entropic (PMMA matrix) or enthalpic and entropic (PEO matrix). Transmission electron microscopy (TEM) was used to determine the dispersion of the FeNRs in the polymer matrix. The results show that the FeNRs with the largest brush were always dispersed in the matrix, whereas the rods with the shorter brushes always aggregated in the matrix. This suggests that the brush MW is a critical parameter to achieve dispersion of these mesoscopic materials. This work can be extended to understand the dispersion of other types of mesocopic particles

  11. Platinum-induced structural collapse in layered oxide polycrystalline films

    International Nuclear Information System (INIS)

    Wang, Jianlin; Liu, Changhui; Huang, Haoliang; Fu, Zhengping; Peng, Ranran; Zhai, Xiaofang; Lu, Yalin

    2015-01-01

    Effect of a platinum bottom electrode on the SrBi 5 Fe 1−x Co x Ti 4 O 18 layered oxide polycrystalline films was systematically studied. The doped cobalt ions react with the platinum to form a secondary phase of PtCoO 2 , which has a typical Delafossite structure with a weak antiferromagnetism and an exceptionally high in-plane electrical conductivity. Formation of PtCoO 2 at the interface partially consumes the cobalt dopant and leads to the structural collapsing from 5 to 4 layers, which was confirmed by X-ray diffraction and high resolution transmission electron microscopy measurements. Considering the weak magnetic contribution from PtCoO 2 , the observed ferromagnetism should be intrinsic of the Aurivillius compounds. Ferroelectric properties were also indicated by the piezoresponse force microscopy. In this work, the platinum induced secondary phase at the interface was observed, which has a strong impact on Aurivillius structural configuration and thus the ferromagnetic and ferroelectric properties

  12. Synthesis and luminescent properties of PEO/lanthanide oxide nanoparticle hybrid films

    International Nuclear Information System (INIS)

    Goubard, F.; Vidal, F.; Bazzi, R.; Tillement, O.; Chevrot, C.; Teyssie, D.

    2007-01-01

    In this study, we investigate the optical properties of lanthanide oxide nanoparticles dispersed in poly(ethylene oxide) (PEO) network as thermally stable polymeric films. The aim of this work is both to keep a good optical transparency in the visible domain and to obtain luminescent materials after incorporation of nanoparticles. For this purpose, we develop luminescent nanocrystals of oxides containing terbium ion as a doping element in Gd 2 O 3 . These sub-5-nm lanthanide oxides nanoparticles have been prepared by direct oxide precipitation in high-boiling polyalcohol solutions and characterized by luminescence spectroscopy. PEO/lanthanide oxide nanohybrid films are prepared by radical polymerization of poly(ethylene glycol) methacrylate after introduction of lanthanide oxide particles. As a first result; the obtained films present interesting luminescence properties with a very low lanthanide oxide content (up to 0.29 wt%). Furthermore, these films are still transparent and keep their original mechanical properties. Prior to describe the specific applications to optical use, we report here the dynamic mechanical analysis (DMA), X-ray diffraction (XRD) analysis, transmission electron microscopy (TEM), and luminescent properties of. nanohybrid films

  13. Synthesis and luminescent properties of PEO/lanthanide oxide nanoparticle hybrid films

    Energy Technology Data Exchange (ETDEWEB)

    Goubard, F. [LPPI, Universite de Cergy-Pontoise, 5 Mail Gay-Lussac, Neuville-sur-Oise, 95031 Cergy-Pontoise cedex (France)]. E-mail: fabrice.goubard@u-cergy.fr; Vidal, F. [LPPI, Universite de Cergy-Pontoise, 5 Mail Gay-Lussac, Neuville-sur-Oise, 95031 Cergy-Pontoise cedex (France); Bazzi, R. [LPCML, Universite Lyon 1, 43 Bd. du 11 Novembre 1918, 69622 Villeurbanne (France); Tillement, O. [LPCML, Universite Lyon 1, 43 Bd. du 11 Novembre 1918, 69622 Villeurbanne (France); Nano-H, 23 rue Royal, 69001 Lyon (France); Chevrot, C. [LPPI, Universite de Cergy-Pontoise, 5 Mail Gay-Lussac, Neuville-sur-Oise, 95031 Cergy-Pontoise cedex (France); Teyssie, D. [LPPI, Universite de Cergy-Pontoise, 5 Mail Gay-Lussac, Neuville-sur-Oise, 95031 Cergy-Pontoise cedex (France)

    2007-10-15

    In this study, we investigate the optical properties of lanthanide oxide nanoparticles dispersed in poly(ethylene oxide) (PEO) network as thermally stable polymeric films. The aim of this work is both to keep a good optical transparency in the visible domain and to obtain luminescent materials after incorporation of nanoparticles. For this purpose, we develop luminescent nanocrystals of oxides containing terbium ion as a doping element in Gd{sub 2}O{sub 3}. These sub-5-nm lanthanide oxides nanoparticles have been prepared by direct oxide precipitation in high-boiling polyalcohol solutions and characterized by luminescence spectroscopy. PEO/lanthanide oxide nanohybrid films are prepared by radical polymerization of poly(ethylene glycol) methacrylate after introduction of lanthanide oxide particles. As a first result; the obtained films present interesting luminescence properties with a very low lanthanide oxide content (up to 0.29 wt%). Furthermore, these films are still transparent and keep their original mechanical properties. Prior to describe the specific applications to optical use, we report here the dynamic mechanical analysis (DMA), X-ray diffraction (XRD) analysis, transmission electron microscopy (TEM), and luminescent properties of. nanohybrid films.

  14. Oxide film defects in Al alloys and the formation of hydrogen- related porosity

    International Nuclear Information System (INIS)

    Griffiths, W D; Yue, Y; Gerrard, A J

    2016-01-01

    Double oxide film defects have also been held responsible for the origins of hydrogen porosity, where hydrogen dissolved in the Al melt passes into the interior atmosphere of the double oxide film defect causing it to inflate. However, this is in opposition to long- established evidence that H cannot readily diffuse through aluminium oxide. To investigate this further, samples of commercial purity Al were first degassed to remove their initial H content, and then heated to above their melting point and held in atmospheres of air and nitrogen respectively, to determine any differences in H pick-up. The experiment showed that samples held in an oxidising atmosphere, and having an oxide skin, picked up significantly less H than when the samples were held in a nitrogen atmosphere, which resulted in the formation of AlN in cracks in the oxide skin of the sample. It is suggested that double oxide film defects can give rise to hydrogen-related porosity, but this occurs more quickly when the oxygen in the original oxide film defect has been consumed by reaction with the surrounding melt and nitrogen reacts to form AlN, which is more permeable to H than alumina, more easily allowing the oxide film defect to give rise to a hydrogen pore. This is used to interpret results from an earlier synchrotron experiment, in which a small pore was seen to grow into a larger pore, while an adjacent large pore remained at a constant size. (paper)

  15. Ultra-low power thin film transistors with gate oxide formed by nitric acid oxidation method

    International Nuclear Information System (INIS)

    Kobayashi, H.; Kim, W. B.; Matsumoto, T.

    2011-01-01

    We have developed a low temperature fabrication method of SiO 2 /Si structure by use of nitric acid, i.e., nitric acid oxidation of Si (NAOS) method, and applied it to thin film transistors (TFT). A silicon dioxide (SiO 2 ) layer formed by the NAOS method at room temperature possesses 1.8 nm thickness, and its leakage current density is as low as that of thermally grown SiO 2 layer with the same thickness formed at ∼900 deg C. The fabricated TFTs possess an ultra-thin NAOS SiO 2 /CVD SiO 2 stack gate dielectric structure. The ultrathin NAOS SiO 2 layer effectively blocks a gate leakage current, and thus, the thickness of the gate oxide layer can be decreased from 80 to 20 nm. The thin gate oxide layer enables to decrease the operation voltage to 2 V (cf. the conventional operation voltage of TFTs with 80 nm gate oxide: 12 V) because of the low threshold voltages, i.e., -0.5 V for P-ch TFTs and 0.5 V for N-ch TFTs, and thus the consumed power decreases to 1/36 of that of the conventional TFTs. The drain current increases rapidly with the gate voltage, and the sub-threshold voltage is ∼80 mV/dec. The low sub-threshold swing is attributable to the thin gate oxide thickness and low interface state density of the NAOS SiO 2 layer. (authors)

  16. Bioinspired, Ultrastrong, Highly Biocompatible, and Bioactive Natural Polymer/Graphene Oxide Nanocomposite Films.

    Science.gov (United States)

    Zhu, Wen-Kun; Cong, Huai-Ping; Yao, Hong-Bin; Mao, Li-Bo; Asiri, Abdullah M; Alamry, Khalid A; Marwani, Hadi M; Yu, Shu-Hong

    2015-09-09

    Tough and biocompatible nanocomposite films: A new type of bioinspired ultrastrong, highly biocompatible, and bioactive konjac glucomannan (KGM)/graphene oxide (GO) nanocomposite film is fabricated on a large scale by a simple solution-casting method. Such KGM-GO composite films exhibit much enhanced mechanical properties under the strong hydrogen-bonding interactions, showing great potential in the fields of tissue engineering and food package. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. ORDERED POROUS ANODIC ALUMINUM OXIDE FILMS MADE BY TWO-STEP ANODIZATION

    OpenAIRE

    HANSONG XUE; HUAJI LI; YU YI; HUIFANG HU

    2007-01-01

    Porous Anodic Aluminum Oxide (AAO) films were prepared by two-step anodizing in sulfuric and oxalic acid solutions and observed by transmission electron microscope (TEM) and X-ray diffraction. The results show that the form of AAO film is affected by the varieties and concentrations of electrolyte, anodizing voltage, and the anodizing time; the formation and evolution processes of the AAO film are relative with the anodizing voltage severely, and the appropriate voltage is helpful to the orde...

  18. Preparation of transparent conducting zinc oxide films by rf reactive sputtering

    International Nuclear Information System (INIS)

    Vasanelli, L.; Valentini, A.; Losacco, A.

    1986-01-01

    Transparent conducting zinc oxide films have been prepared by reactive sputtering in a Ar/H/sub 2/ mixture. The optical and electrical properties of the films are presented and discussed. The effects of some post-deposition thermal treatment have been also investigated. ZnO/CdTe heterojunctions have been prepared by sputtering ZnO films on CdTe single crystals. The photovoltaic conversion efficiencies of the obtained solar cells was 6.8%

  19. Active Bilayer PE/PCL Films for Food Packaging Modified with Zinc Oxide and Casein

    OpenAIRE

    Rešček, Ana; Kratofil Krehula, Ljerka; Katančić, Zvonimir; Hrnjak-Murgić, Zlata

    2015-01-01

    This paper studies the properties of active polymer food packaging bilayer polyethylene/polycaprolactone (PE/PCL) films. Such packaging material consists of primary PE layer coated with thin film of PCL coating modified with active component (zinc oxide or zinc oxide/casein complex) with intention to extend the shelf life of food and to maintain the quality and health safety. The influence of additives as active components on barrier, mechanical, thermal and antimicrobial properties of such m...

  20. Effect of Annealing on Tungsten Oxide Thin Films for Acetone Gas ...

    Indian Academy of Sciences (India)

    11

    Abstract: The gas sensing properties and topology of tungsten oxide thin films ..... Figure 3: Atomic force microscopy images of sensing film for (a) as-deposited (a) .... the surface, it forms compounds with the oxygen ions species present on the ...

  1. Electrical properties of vacuum-annealed titanium-doped indium oxide films

    NARCIS (Netherlands)

    Yan, L.T.; Rath, J.K.; Schropp, R.E.I.

    2011-01-01

    Titanium-doped indium oxide (ITiO) films were deposited on Corning glass 2000 substrates at room temperature by radio frequency magnetron sputtering followed by vacuum post-annealing. With increasing deposition power, the as-deposited films showed an increasingly crystalline nature. As-deposited

  2. Growth and surface characterization of sputter-deposited molybdenum oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ramana, C.V. [Nanoscience and Surface Chemistry Laboratory, Department of Geological Sciences, University of Michigan, Ann Arbor, MI 48109 (United States)]. E-mail: ramanacv@umich.edu; Atuchin, V.V. [Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Kesler, V.G. [Technical Centre, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Kochubey, V.A. [Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Pokrovsky, L.D. [Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Shutthanandan, V. [Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, WA 99352 (United States); Becker, U. [Nanoscience and Surface Chemistry Laboratory, Department of Geological Sciences, University of Michigan, Ann Arbor, MI 48109 (United States); Ewing, R.C. [Nanoscience and Surface Chemistry Laboratory, Department of Geological Sciences, University of Michigan, Ann Arbor, MI 48109 (United States)

    2007-04-15

    Molybdenum oxide thin films were produced by magnetron sputtering using a molybdenum (Mo) target. The sputtering was performed in a reactive atmosphere of an argon-oxygen gas mixture under varying conditions of substrate temperature (T {sub s}) and oxygen partial pressure (pO{sub 2}). The effect of T {sub s} and pO{sub 2} on the growth and microstructure of molybdenum oxide films was examined in detail using reflection high-energy electron diffraction (RHEED), Rutherford backscattering spectrometry (RBS), energy-dispersive X-ray spectrometry (EDS), X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM) measurements. The analyses indicate that the effect of T {sub s} and pO{sub 2} on the microstructure and phase of the grown molybdenum oxide thin films is remarkable. RHEED and RBS results indicate that the films grown at 445 deg. C under 62.3% O{sub 2} pressure were stoichiometric and polycrystalline MoO{sub 3}. Films grown at lower pO{sub 2} were non-stoichiometric MoO {sub x} films with the presence of secondary phase. The microstructure of the grown Mo oxide films is discussed and conditions were optimized to produce phase pure, stoichiometric, and highly textured polycrystalline MoO{sub 3} films.

  3. Growth and surface characterization of sputter-deposited molybdenum oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ramana, Chintalapalle V.; Atuchin, Victor V.; Kesler, V. G.; Kochubey, V. A.; Pokrovsky, L. D.; Shutthanandan, V.; Becker, U.; Ewing, Rodney C.

    2007-04-15

    Molybdenum oxide thin films were produced by magnetron sputtering using a molybdenum (Mo) target. The sputtering was performed in a reactive atmosphere of argon-oxygen gas mixture under varying conditions of substrate temperature (Ts) and oxygen partial pressure (pO2). The effect of Ts and pO2 on the growth and microstructure of molybdenum oxide films was examined in detail using reflection high-energy electron diffraction (RHEED), Rutherford backscattering spectrometry (RBS), energy dispersive X-ray spectrometry (EDS), X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM) measurements. The analyses indicate that the effect of Ts and pO2 on the microstructure and phase of the grown molybdenum oxide thin films is remarkable. RHEED and RBS results indicate that the films grown at 445 *C under 62.3% O2 pressure were stoichiometric and polycrystalline MoO3. Films grown at lower pO2 were nonstoichiometric MoOx films with the presence of secondary phase. The microstructure of the grown Mo oxide films is discussed and conditions were optimized to produce phase pure, stoichiometric, and highly textured polycrystalline MoO3 films.

  4. Study of Nb-oxide Nb-Pb film structures by tunnel scanning microscope

    International Nuclear Information System (INIS)

    Golyamina, E.M.; Troyanovskij, A.M.

    1986-01-01

    The surface of niobium films, which were earlier used to create niobium-niobium oxide-lead film structures on their base, was investigated, using tunnel scanning microscope. The results obtained agree well with the observed properties of these structures, containing josephson and tunnel junctions

  5. Optical and electrochromic properties of sol-gel deposited Ti- doped vanadium oxide films

    International Nuclear Information System (INIS)

    Oezer, N.; Sabuncu, S.

    1997-01-01

    Because of the yellowish color, vanadium oxide films in the as deposited state is not as favorable as transparent coatings for most elector chromic devices. an interesting possibility to alter the yellowish colours is the doping with other non-absorbing metal oxides. Ti doped vanadium oxide films with various amounts of titanium were synthesized and investigated as transparent counter electrodes for electrochromic transmissive device application. Electrochromic titanium doped vanadium pentoxide (V sub 2 O 5) coatings were prepared by the sol-gel dip coating technique. The coating solutions were synthesized from vanadium tri(isopropoxide) precursors. X-ray diffraction (XRD) studies showed that the sol-gel deposited doped films heat treated at temperatures below 350 degree centigrade, were amorphous, whereas hose heat treated at higher temperatures were slight y crystalline. The optical and electrochemical properties of the Ti doped vanadium oxide films has been investigated in 0.1 m LiClO sub 4 propylene carbonate solution color changes by dropping were noted for all investigated films exhibits good electrochemical cycling (CV) measurements also showed that Ti doped V sub 2 O sub 5 films exhibits good electrochemical cycling reversibility, 'in situ' optical measurement revealed that those films exhibits good electrochemical cycling the spectra range 300 < lambda < 800 nm and change color between yellow and light green. The change in visible transmittance was 25 % for 5% Ti doped film. (author)

  6. Simple Methods for Production of Nanoscale Metal Oxide Films from Household Sources

    Science.gov (United States)

    Campbell, Dean J.; Baliss, Michelle S.; Hinman, Jordan J.; Ziegenhorn, John W.; Andrews, Mark J.; Stevenson, Keith J.

    2013-01-01

    Production of thin metal oxide films was recently explored as part of an outreach program with a goal of producing nanoscale structures with household items. Household items coated with various metals or titanium compounds can be heated to produce colorful films with nanoscale thicknesses. As part of a materials chemistry laboratory experiment…

  7. Thin film bismuth iron oxides useful for piezoelectric devices

    Science.gov (United States)

    Zeches, Robert J.; Martin, Lane W.; Ramesh, Ramamoorthy

    2016-05-31

    The present invention provides for a composition comprising a thin film of BiFeO.sub.3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO.sub.3 thin film, and a second electrode in contact with the BiFeO.sub.3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.

  8. Characterization of quaternary metal oxide films by synchrotron x-ray fluorescence microprobe

    Energy Technology Data Exchange (ETDEWEB)

    Perry, D.L.; Thompson, A.C.; Russo, R.E. [Ernest Orlando Lawrence Berkeley National Lab., CA (United States)] [and others

    1997-04-01

    A high demand for thin films in industrial technology has been responsible for the creation of new techniques for the fabrication of such films. One highly effective method for the syntheses of variable composition thin films is pulsed-laser deposition (PLD). The technique has a large number of characteristics which make it an attractive approach for making films. It offers rapid deposition rates, congruent material transfer, simple target requirements from which to make the films, in situ multilayer deposition, and no gas composition or pressure requirements. Additionally, the technique can also afford crystalline films and films with novel structures. Pulsed-laser deposition can be used to make films of semiconductors, insulators, high-temperature superconductors, diamond-like films, and piezoelectric materials. Quaternary metal oxides involving calcium, nickel, and potassium have been shown to be quite effective in the catalysis of coal gasification and methane coupling. One approach to incorporating all three of the metal oxides into one phase is the use of laser ablation to prepare films of the catalysts so that they may be used for coatings, smooth surfaces on which to conduct detailed studies of gas-solid interface reactions that are involved in catalytic processes, and other applications. The problem of dissimilar boiling points of the three metal oxides system is overcome, since the laser ablation process effects the volatilization of all three components from the laser target essentially simultaneously. There is strong interest in gaining an understanding of the chemical and morphological aspects of the films that are deposited. Phenomena such as lattice defects and chemical heterogeneity are of interest. The experimental data discussed here are restricted to the matrix homogeneity of the films themselves for films which were void of microparticles.

  9. Systematic study of nickel oxide ceramic pigment using Ni C O3.2 Ni(O H)2.4 H2 O as precursor

    International Nuclear Information System (INIS)

    Azevedo, Emilio; Longo, Elson

    1997-01-01

    The ability of some ceramics silicate and oxides have to accommodate impurity in the crystal lattice to a large colors diversity. These impurities can be both interstitial or substitutional creating crystal fields in accordance with ion-impurity valence. The technical procedures used to characterize the pigments were: DRX, IV, MEV, and BET. To optimize this property systematic studies were done for nickel oxide with a composition of 0,3% to 30%. In this work it was studied nickel oxide synthesis based on feldspar using Pechini chemistry synthesis. To obtain this powder. (author)

  10. Micro-length anodic porous niobium oxide for lithium-ion thin film battery applications

    International Nuclear Information System (INIS)

    Yoo, Jeong Eun; Park, Jiyoung; Cha, Gihoon; Choi, Jinsub

    2013-01-01

    The anodization of niobium in an aqueous mixture of H 3 PO 4 and HF in the potential range from 2.5 to 30 V for 2 h at 5 °C was performed, demonstrating that anodic porous niobium oxide film with a thickness of up to 2000 nm, including a surface dissolution layer, can be obtained by controlling the applied potential and composition of the electrolytes. Specifically, surface dissolution-free porous niobium oxide film with a thickness of 800 nm can be prepared in a low electrolyte concentration. The surface dissolution is observed when the concentration ratio of HF (wt.%):H 3 PO 4 (M) was more than 2:1. The discontinuous layers in the niobium oxide film were observed when the thickness was higher than 500 nm, which was ascribed to the large volume expansion of the niobium oxide grown from the niobium metal. The anodic porous niobium oxide film was used as the cathode for lithium-ion batteries in the potential range from 1.2 to 3.0 V at a current density of 7.28 × 10 − 6 A cm −2 . The first discharge capacity of ca. 53 μA h cm − 2 was obtained in 800 nm thick niobium oxide without a surface dissolution layer. - Highlights: ► Anodic porous niobium oxide film with a thickness of 2000 nm was obtained. ► Surface dissolution-free porous niobium oxide film was prepared. ► The niobium oxide film was used as the cathode for lithium-ion batteries

  11. Determination of oxide film thickness on aluminium using 14-MeV neutron activation and BET method

    International Nuclear Information System (INIS)

    Foerster, H.

    1983-01-01

    A new method is described for the determination of the mean film thickness of aluminium oxides by 14-MeV neutron activation analysis of the oxygen and by BET measurement of the surface area. The mean film thickness obtained is independent of the surface roughness. Stable oxide films consisting of only a few atomic layers of oxygen are detected on aluminium. (author)

  12. Process for growing a film epitaxially upon an oxide surface and structures formed with the process

    Science.gov (United States)

    McKee, Rodney A.; Walker, Frederick J.

    1995-01-01

    A process and structure wherein a film comprised of a perovskite or a spinel is built epitaxially upon a surface, such as an alkaline earth oxide surface, involves the epitaxial build up of alternating constituent metal oxide planes of the perovskite or spinel. The first layer of metal oxide built upon the surface includes a metal element which provides a small cation in the crystalline structure of the perovskite or spinel, and the second layer of metal oxide built upon the surface includes a metal element which provides a large cation in the crystalline structure of the perovskite or spinel. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 .mu.m for optical device applications.

  13. Depth Profiling Analysis of Aluminum Oxidation During Film Deposition in a Conventional High Vacuum System

    Science.gov (United States)

    Kim, Jongmin; Weimer, Jeffrey J.; Zukic, Muamer; Torr, Douglas G.

    1994-01-01

    The oxidation of aluminum thin films deposited in a conventional high vacuum chamber has been investigated using x-ray photoelectron spectroscopy (XPS) and depth profiling. The state of the Al layer was preserved by coating it with a protective MgF2 layer in the deposition chamber. Oxygen concentrations in the film layers were determined as a function of sputter time (depth into the film). The results show that an oxidized layer is formed at the start of Al deposition and that a less extensively oxidized Al layer is deposited if the deposition rate is fast. The top surface of the Al layer oxidizes very quickly. This top oxidized layer may be thicker than has been previously reported by optical methods. Maximum oxygen concentrations measured by XPS at each Al interface are related to pressure to rate ratios determined during the Al layer deposition.

  14. Spectroscopic ellipsometry studies of index profile of indium tin oxide films prepared by spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    El Rhaleb, H.; Benamar, E.; Rami, M.; Roger, J.P.; Hakam, A.; Ennaoui, A

    2002-11-30

    Spectroscopic ellipsometry (SE) has proven to be a very powerful diagnostic for thin film characterisation. It was used to determine thin film parameters such as film thickness and optical functions of polycrystalline tin-doped indium oxide (ITO) films deposited by spray pyrol onto Pyrex substrates. Dielectric ITO films often present microstructures which give rise to a variation of the refractive index with the distance from substrate. In this work, it was found that the fit between ellipsometric data and optical models results could be significantly improved when it was assumed that the refractive index of ITO films varied across the upper 60 nm near the film surface. Also, the surface roughness was modelled and compared with that given by the atomic force microscope (AFM)

  15. Spectroscopic ellipsometry studies of index profile of indium tin oxide films prepared by spray pyrolysis

    International Nuclear Information System (INIS)

    El Rhaleb, H.; Benamar, E.; Rami, M.; Roger, J.P.; Hakam, A.; Ennaoui, A.

    2002-01-01

    Spectroscopic ellipsometry (SE) has proven to be a very powerful diagnostic for thin film characterisation. It was used to determine thin film parameters such as film thickness and optical functions of polycrystalline tin-doped indium oxide (ITO) films deposited by spray pyrolysis onto Pyrex substrates. Dielectric ITO films often present microstructures which give rise to a variation of the refractive index with the distance from substrate. In this work, it was found that the fit between ellipsometric data and optical models results could be significantly improved when it was assumed that the refractive index of ITO films varied across the upper 60 nm near the film surface. Also, the surface roughness was modelled and compared with that given by the atomic force microscope (AFM)

  16. Spectroscopic ellipsometry studies of index profile of indium tin oxide films prepared by spray pyrolysis

    Science.gov (United States)

    El Rhaleb, H.; Benamar, E.; Rami, M.; Roger, J. P.; Hakam, A.; Ennaoui, A.

    2002-11-01

    Spectroscopic ellipsometry (SE) has proven to be a very powerful diagnostic for thin film characterisation. It was used to determine thin film parameters such as film thickness and optical functions of polycrystalline tin-doped indium oxide (ITO) films deposited by spray pyrolysis onto Pyrex substrates. Dielectric ITO films often present microstructures which give rise to a variation of the refractive index with the distance from substrate. In this work, it was found that the fit between ellipsometric data and optical models results could be significantly improved when it was assumed that the refractive index of ITO films varied across the upper 60 nm near the film surface. Also, the surface roughness was modelled and compared with that given by the atomic force microscope (AFM).

  17. Laser micromachining of indium tin oxide films on polymer substrates by laser-induced delamination

    International Nuclear Information System (INIS)

    Willis, David A; Dreier, Adam L

    2009-01-01

    A Q-switched neodymium : yttrium-aluminium-garnet (Nd : YAG) laser was used to ablate indium tin oxide (ITO) thin films from polyethylene terephthalate substrates. Film damage and partial removal with no evidence of a melt zone was observed above 1.7 J cm -2 . Above the film removal threshold (3.3 J cm -2 ) the entire film thickness was removed without substrate damage, suggesting that ablation was a result of delamination of the film in the solid phase. Measurements of ablated fragment velocities near the ablation threshold were consistent with calculations of velocities caused by stress-induced delamination of the ITO film, except for a high velocity component at higher fluences. Nanosecond time-resolved shadowgraph photography revealed that the high velocity component was a shock wave induced by the rapid compression of ambient air when the film delaminated.

  18. Neurônios espelho

    Directory of Open Access Journals (Sweden)

    Allan Pablo Lameira

    2006-01-01

    Full Text Available Os neurônios espelho foram descritos inicialmente em macaco Rhesus. Estes neurônios disparavam quando o macaco realizava ações específicas (como pegar uvas passa ou quando ele observava a mesma ação realizada por outro macaco ou por um pesquisador. Assim, estes neurônios possibilitam a compreensão da ação e/ou da intenção de outro animal pela ativação subliminar desta ação nos circuitos fronto-parietais. Estes neurônios estariam envolvidos com a origem da linguagem humana e a sua disfunção poderia causar autismo. Nesta revisão, descrevemos, em humanos e em primatas não-humanos, as áreas corticais com atividade tipo “neurônio espelho” e as áreas envolvidas com o planejamento e a execução explícita e implícita de ações. Existe uma grande sobreposição entre estas áreas, bem como com as áreas envolvidas com o reconhecimento da lateralidade de partes do corpo. Sugerimos então que os neurônios espelho também podem estar envolvidos com o reconhecimento da lateralidade de partes do corpo.

  19. Optimisation of chemical solution deposition of indium tin oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sunde, Tor Olav Løveng; Einarsrud, Mari-Ann; Grande, Tor, E-mail: grande@ntnu.no

    2014-12-31

    An environmentally friendly aqueous sol–gel process has been optimised to deposit indium tin oxide (ITO) thin films, aiming to improve the film properties and reduce the deposition costs. It was demonstrated how parameters such as cation concentration and viscosity could be applied to modify the physical properties of the sol and thereby reduce the need for multiple coatings to yield films with sufficient conductivity. The conductivity of the thin films was enhanced by adjusting the heat treatment temperature and atmosphere. Both increasing the heat treatment temperature of the films from 530 to 800 °C and annealing in reducing atmosphere significantly improved the electrical conductivity, and conductivities close to the state of the art sputtered ITO films were obtained. A pronounced decreased conductivity was observed after exposing the thin films to air and the thermal reduction and ageing of the film was studied by in situ conductivity measurements. - Highlights: • Spin coating of indium tin oxide using an aqueous solution was optimised. • The conductivity was enhanced by thermal annealing in reducing atmosphere. • The conductivity of is comparable to the conductivity of sputtered films. • A relaxation process in the reduced thin film was observed after exposure in air.

  20. Thickness measurement of a thin hetero-oxide film with an interfacial oxide layer by X-ray photoelectron spectroscopy

    Science.gov (United States)

    Kim, Kyung Joong; Lee, Seung Mi; Jang, Jong Shik; Moret, Mona

    2012-02-01

    The general equation Tove = L cos θ ln(Rexp/R0 + 1) for the thickness measurement of thin oxide films by X-ray photoelectron spectroscopy (XPS) was applied to a HfO2/SiO2/Si(1 0 0) as a thin hetero-oxide film system with an interfacial oxide layer. The contribution of the thick interfacial SiO2 layer to the thickness of the HfO2 overlayer was counterbalanced by multiplying the ratio between the intensity of Si4+ from a thick SiO2 film and that of Si0 from a Si(1 0 0) substrate to the intensity of Si4+ from the HfO2/SiO2/Si(1 0 0) film. With this approximation, the thickness levels of the HfO2 overlayers showed a small standard deviation of 0.03 nm in a series of HfO2 (2 nm)/SiO2 (2-6 nm)/Si(1 0 0) films. Mutual calibration with XPS and transmission electron microscopy (TEM) was used to verify the thickness of HfO2 overlayers in a series of HfO2 (1-4 nm)/SiO2 (3 nm)/Si(1 0 0) films. From the linear relation between the thickness values derived from XPS and TEM, the effective attenuation length of the photoelectrons and the thickness of the HfO2 overlayer could be determined.

  1. Aluminum-doped zinc oxide films as transparent conductive electrode for organic light-emitting devices

    International Nuclear Information System (INIS)

    Jiang, X.; Wong, F.L.; Fung, M.K.; Lee, S.T.

    2003-01-01

    Highly transparent conductive, aluminum-doped zinc oxide (ZnO:Al) films were deposited on glass substrates by midfrequency magnetron sputtering of metallic aluminum-doped zinc target. ZnO:Al films with surface work functions between 3.7 and 4.4 eV were obtained by varying the sputtering conditions. Organic light-emitting diodes (OLEDs) were fabricated on these ZnO:Al films. A current efficiency of higher than 3.7 cd/A, was achieved. For comparison, 3.9 cd/A was achieved by the reference OLEDs fabricated on commercial indium-tin-oxide substrates

  2. Solid-phase electrochemical reduction of graphene oxide films in alkaline solution

    Science.gov (United States)

    Basirun, Wan J.; Sookhakian, Mehran; Baradaran, Saeid; Mahmoudian, Mohammad R.; Ebadi, Mehdi

    2013-09-01

    Graphene oxide (GO) film was evaporated onto graphite and used as an electrode to produce electrochemically reduced graphene oxide (ERGO) films by electrochemical reduction in 6 M KOH solution through voltammetric cycling. Fourier transformed infrared and Raman spectroscopy confirmed the presence of ERGO. Electrochemical impedance spectroscopy characterization of ERGO and GO films in ferrocyanide/ferricyanide redox couple with 0.1 M KCl supporting electrolyte gave results that are in accordance with previous reports. Based on the EIS results, ERGO shows higher capacitance and lower charge transfer resistance compared to GO.

  3. Thermoluminescent characterization of thin films of aluminium oxide submitted to beta and gamma radiation

    International Nuclear Information System (INIS)

    Villagran, E.; Escobar A, L.; Camps, E.; Gonzalez, P.R.; Martinez A, L.

    2002-01-01

    By mean of the laser ablation technique, thin films of aluminium oxide have been deposited on kapton substrates. These films present thermoluminescent response (Tl) when they are exposed to beta and gamma radiation. The brilliance curves show two peaks between 112 C and 180 C. A dose-response relationship study was realized and the Tl kinetic parameters were determined using the computerized deconvolution of the brilliance curve (CGCD). The thin films of aluminium oxide have potential applications as ultra.thin radiation dosemeters. (Author)

  4. Microstructural variation in titanium oxide thin films deposited by DC magnetron sputtering

    International Nuclear Information System (INIS)

    Pandian, Ramanathaswamy; Natarajan, Gomathi; Kamruddin, M.; Tyagi, A.K.

    2013-01-01

    We report on the microstructural evolution of titanium oxide thin films deposited by reactive DC magnetron sputtering using titanium metal target. By varying the ratio of sputter-gas mixture containing argon, oxygen and nitrogen various phases of titanium oxide, almost pure rutile, rutile-rich and anatase-rich nano-crystalline, were deposited on Si substrates at room temperature. Using high-resolution scanning electron microscopy, X-ray diffraction and micro-Raman techniques the microstructure of the films were revealed. The relationship between the microstructure of the films and the oxygen partial pressure during sputtering is discussed

  5. Post-deposition annealing effects in RF reactive magnetron sputtered indium tin oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, M A; Herrero, J; Gutierrez, M T [Inst. de Energias Renovables (CIEMAT), Madrid (Spain)

    1992-05-01

    Indium tin oxide films have been grown by RF reactive magnetron sputtering. The influence of the deposition parameters on the properties of the films has been investigated and optimized, obtaining a value for the figure of merit of 6700 ({Omega} cm){sup -1}. As-grown indium tin oxide films were annealed in vacuum and O{sub 2} atmosphere. After these heat treatments the electro-optical properties were improved, with values for the resistivity of 1.9x10{sup -4} {Omega} cm and the figure of merit of 26700 ({Omega} cm){sup -1}. (orig.).

  6. Epitaxial thin film growth and properties of unconventional oxide superconductors. Cuprates and cobaltates

    International Nuclear Information System (INIS)

    Krockenberger, Y.

    2006-01-01

    The discovery of high-temperature superconductors has strongly driven the development of suited thin film fabrication methods of complex oxides. One way is the adaptation of molecular beam epitaxy (MBE) for the growth of oxide materials. Another approach is the use of pulsed laser deposition (PLD) which has the advantage of good stoichiometry transfer from target to the substrate. Both techniques are used within this thesis. Epitaxial thin films of new materials are of course needed for future applications. In addition, the controlled synthesis of thin film matter which can be formed far away from thermal equilibrium allows for the investigation of fundamental physical materials properties. (orig.)

  7. Epitaxial thin film growth and properties of unconventional oxide superconductors. Cuprates and cobaltates

    Energy Technology Data Exchange (ETDEWEB)

    Krockenberger, Y.

    2006-07-01

    The discovery of high-temperature superconductors has strongly driven the development of suited thin film fabrication methods of complex oxides. One way is the adaptation of molecular beam epitaxy (MBE) for the growth of oxide materials. Another approach is the use of pulsed laser deposition (PLD) which has the advantage of good stoichiometry transfer from target to the substrate. Both techniques are used within this thesis. Epitaxial thin films of new materials are of course needed for future applications. In addition, the controlled synthesis of thin film matter which can be formed far away from thermal equilibrium allows for the investigation of fundamental physical materials properties. (orig.)

  8. Cathodic arc sputtering of functional titanium oxide thin films, demonstrating resistive switching

    Energy Technology Data Exchange (ETDEWEB)

    Shvets, Petr, E-mail: pshvets@innopark.kantiana.ru; Maksimova, Ksenia; Demin, Maxim; Dikaya, Olga; Goikhman, Alexander

    2017-05-15

    The formation of thin films of the different stable and metastable titanium oxide phases is demonstrated by cathode arc sputtering of a titanium target in an oxygen atmosphere. We also show that sputtering of titanium in vacuum yields the formation of titanium silicides on the silicon substrate. The crystal structure of the produced samples was investigated using Raman spectroscopy and X-ray diffraction. We conclude that cathode arc sputtering is a flexible method suitable for producing the functional films for electronic applications. The functionality is verified by the memory effect demonstration, based on the resistive switching in the titanium oxide thin film structure.

  9. Comparative study of zinc oxide and aluminum doped zinc oxide transparent thin films grown by direct current magnetron sputtering

    International Nuclear Information System (INIS)

    Suchea, M.; Christoulakis, S.; Katsarakis, N.; Kitsopoulos, T.; Kiriakidis, G.

    2007-01-01

    Pure and aluminum (Al) doped zinc oxide (ZnO and ZAO) thin films have been grown using direct current (dc) magnetron sputtering from pure metallic Zn and ceramic ZnO targets, as well as from Al-doped metallic ZnAl2at.% and ceramic ZnAl2at.%O targets at room temperature (RT). The effects of target composition on the film's surface topology, crystallinity, and optical transmission have been investigated for various oxygen partial pressures in the sputtering atmosphere. It has been shown that Al-doped ZnO films sputtered from either metallic or ceramic targets exhibit different surface morphology than the undoped ZnO films, while their preferential crystalline growth orientation revealed by X-ray diffraction remains always the (002). More significantly, Al-doping leads to a larger increase of the optical transmission and energy gap (E g ) of the metallic than of the ceramic target prepared films

  10. Effect of thermal processing on silver thin films of varying thickness deposited on zinc oxide and indium tin oxide

    International Nuclear Information System (INIS)

    Sivaramakrishnan, K.; Ngo, A. T.; Alford, T. L.; Iyer, S.

    2009-01-01

    Silver films of varying thicknesses (25, 45, and 60 nm) were deposited on indium tin oxide (ITO) on silicon and zinc oxide (ZnO) on silicon. The films were annealed in vacuum for 1 h at different temperatures (300-650 deg. C). Four-point-probe measurements were used to determine the resistivity of the films. All films showed an abrupt change in resistivity beyond an onset temperature that varied with thickness. Rutherford backscattering spectrometry measurements revealed agglomeration of the Ag films upon annealing as being responsible for the resistivity change. X-ray pole figure analysis determined that the annealed films took on a preferential texturing; however, the degree of texturing was significantly higher in Ag/ZnO/Si than in Ag/ITO/Si samples. This observation was accounted for by interface energy minimization. Atomic force microscopy (AFM) measurements revealed an increasing surface roughness of the annealed films with temperature. The resistivity behavior was explained by the counterbalancing effects of increasing crystallinity and surface roughness. Average surface roughness obtained from the AFM measurements were also used to model the agglomeration of Ag based on Ostwald ripening theory

  11. Electrical and optical properties of reactive DC magnetron sputtered silver oxide thin films: role of oxygen

    Energy Technology Data Exchange (ETDEWEB)

    Kumar Barik, Ullash; Srinivasan, S; Nagendra, C L; Subrahmanyam, A

    2003-04-01

    Silver oxide thin films have been prepared on soda lime glass substrates at room temperature (300 K) by reactive DC Magnetron sputtering technique using pure silver metal target; the oxygen flow rates have been varied in the range 0.00-2.01 sccm. The X-ray diffraction data on these films show a systematic change from metallic silver to silver (sub) oxides. The electrical resistivity increases with increasing oxygen flow. The films show a p-type behavior (by both Hall and Seebeck measurements) for the oxygen flow rates of 0.54, 1.09 and 1.43 sccm. The refractive index of the films (at 632.8 nm) decreases with increasing oxygen content and is in the range 1.167-1.145, whereas the p-type films show a higher refractive index (1.186-1.204). The work function of these silver oxide films has been measured by Kelvin Probe technique. The results, in specific, the p-type conductivity in the silver oxide films, have been explained on the basis of the theory of partial ionic charge proposed by Sanderson.

  12. Electrical and optical properties of reactive DC magnetron sputtered silver oxide thin films: role of oxygen

    International Nuclear Information System (INIS)

    Kumar Barik, Ullash; Srinivasan, S.; Nagendra, C.L.; Subrahmanyam, A.

    2003-01-01

    Silver oxide thin films have been prepared on soda lime glass substrates at room temperature (300 K) by reactive DC Magnetron sputtering technique using pure silver metal target; the oxygen flow rates have been varied in the range 0.00-2.01 sccm. The X-ray diffraction data on these films show a systematic change from metallic silver to silver (sub) oxides. The electrical resistivity increases with increasing oxygen flow. The films show a p-type behavior (by both Hall and Seebeck measurements) for the oxygen flow rates of 0.54, 1.09 and 1.43 sccm. The refractive index of the films (at 632.8 nm) decreases with increasing oxygen content and is in the range 1.167-1.145, whereas the p-type films show a higher refractive index (1.186-1.204). The work function of these silver oxide films has been measured by Kelvin Probe technique. The results, in specific, the p-type conductivity in the silver oxide films, have been explained on the basis of the theory of partial ionic charge proposed by Sanderson

  13. Physiochemical Characterization of Iodine (V Oxide Part II: Morphology and Crystal Structure of Particulate Films

    Directory of Open Access Journals (Sweden)

    Brian K. Little

    2015-11-01

    Full Text Available In this study, the production of particulate films of iodine (V oxides is investigated. The influence that sonication and solvation of suspended particles in various alcohol/ketone/ester solvents have on the physical structure of spin or drop cast films is examined in detail with electron microscopy, powder x-ray diffraction, and UV-visible absorption spectroscopy. Results indicate that sonicating iodine oxides in alcohol mixtures containing trace amounts of water decreases deposited particle sizes and produces a more uniform film morphology. UV-visible spectra of the pre-cast suspensions reveal that for some solvents, the iodine oxide oxidizes the solvent, producing I2 and lowering the pH of the suspension. Characterizing the crystals within the cast films reveal their composition to be primarily HI3O8, their orientations to exhibit a preferential orientation, and their growth to be primarily along the ac-plane of the crystal, enhanced at higher spin rates. Spin-coating at lower spin rates produces laminate-like particulate films versus higher density, one-piece films of stacked particles produced by drop casting. The particle morphology in these films consists of a combination of rods, plates, cubes, and rhombohedra structure.

  14. Electrodeposited porous and amorphous copper oxide film for application in supercapacitor

    Energy Technology Data Exchange (ETDEWEB)

    Patake, V.D. [Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, (M.S.) (India); Joshi, S.S. [Clean Energy Research Center, Korea Institute of Science and Technology, Cheongryang, Seoul 130-650 (Korea, Republic of); Lokhande, C.D. [Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, (M.S.) (India); Clean Energy Research Center, Korea Institute of Science and Technology, Cheongryang, Seoul 130-650 (Korea, Republic of)], E-mail: l_chandrakant@yahoo.com; Joo, Oh-Shim [Clean Energy Research Center, Korea Institute of Science and Technology, Cheongryang, Seoul 130-650 (Korea, Republic of)], E-mail: joocat@kist.rre.kr

    2009-03-15

    In present study, the porous amorphous copper oxide thin films have been deposited from alkaline sulphate bath. The cathodic electrodeposition method was employed to deposit copper oxide film at room temperature on stainless steel substrate. Their structural and surface morphological properties were investigated by means of X-ray diffraction (XRD) and scanning electron micrograph (SEM), respectively. To propose this as a new material for possible application in the supercapacitor, its electrochemical properties have been studied in aqueous 1 M Na{sub 2}SO{sub 4} electrolyte using cyclic voltammetry. The structural analysis from XRD pattern showed the formation of amorphous copper oxide film on the substrate. The surface morphological studies from scanning electron micrographs revealed the formation of porous cauliflower-like copper oxide film. The cyclic voltammetric curves showed symmetric nature and increase in capacitance with increase in film thickness. The maximum specific capacitance of 36 F g{sup -1} was exhibited for the 0.6959 mg cm{sup -2} film thickness. This shows that low-cost copper oxide electrode will be a potential application in supercapacitor.

  15. Tungsten oxide thin films obtained by anodisation in low electrolyte concentration

    Energy Technology Data Exchange (ETDEWEB)

    Costa, Nadja B.D. da [Centro de Ciências Químicas, Farmacêuticas e de Alimentos, Universidade Federal de Pelotas, Campus Capão do Leão, s/n, Pelotas, RS (Brazil); Pazinato, Julia C.O. [Instituto de Química, Universidade Federal do Rio Grande do Sul, Av. Bento Gonçalves, 9500 Porto Alegre, RS (Brazil); Sombrio, Guilherme; Pereira, Marcelo B.; Boudinov, Henri [Instituto de Física, Universidade Federal do Rio Grande do Sul, Av. Bento Gonçalves, 9500 Porto Alegre, RS (Brazil); Gündel, André; Moreira, Eduardo C. [Universidade Federal do Pampa, Travessa 45, 1650 Bagé, RS (Brazil); Garcia, Irene T.S., E-mail: irene.garcia@ufrgs.br [Instituto de Química, Universidade Federal do Rio Grande do Sul, Av. Bento Gonçalves, 9500 Porto Alegre, RS (Brazil)

    2015-03-02

    Tungsten oxide nanostructured films were grown on tungsten substrates by anodisation under a fixed voltage and with sodium fluoride as electrolyte. The effect of the anion chloride and the influence of the modifying agent disodium hydrogen phosphate in the tungsten oxide films were also investigated. The structural characterisation of the films was performed by scanning electron microscopy, atomic force microscopy and Raman spectroscopy. The band gap was determined through diffuse reflectance spectroscopy. The thin films were photoluminescent and emitted in the range of 300 to 630 nm when irradiated at 266 nm. The synthesised films efficiently degraded of methyl orange dye in the presence of hydrogen peroxide and 250 nm radiation. The modifying agent was responsible for the improvement of the photocatalytic activity. Films with similar photocatalytic performance were obtained when the system sodium fluoride and disodium hydrogen phosphate were replaced by sodium chloride. The porous structure and low band gap values were responsible for the photocatalytic behaviour. - Highlights: • Tungsten oxide thin films were obtained by anodisation of tungsten in aqueous media. • The performance of the NaCl, NaF and NaF/Na{sub 2}HPO{sub 4} as electrolytes was investigated. • The relation between structure and optical behaviour has been discussed. • Films obtained with NaCl and NaF/Na{sub 2}HPO{sub 4} present similar photocatalytic activity.

  16. Opto-electronic properties of bismuth oxide films presenting different crystallographic phases

    Energy Technology Data Exchange (ETDEWEB)

    Gomez, Celia L. [Instituto de Investigaciones en Materiales, UNAM, Circuito Exterior s/n CU, México D.F. 04510 (Mexico); Posgrado en Ciencia e Ingeniería de Materiales, UNAM, Unidad de Posgrado, Edificio C, Piso 1, Zona Cultural de CU, México, D.F. 04510 (Mexico); Depablos-Rivera, Osmary, E-mail: osmarydep@yahoo.com [Instituto de Investigaciones en Materiales, UNAM, Circuito Exterior s/n CU, México D.F. 04510 (Mexico); Posgrado en Ciencia e Ingeniería de Materiales, UNAM, Unidad de Posgrado, Edificio C, Piso 1, Zona Cultural de CU, México, D.F. 04510 (Mexico); Silva-Bermudez, Phaedra [Instituto de Investigaciones en Materiales, UNAM, Circuito Exterior s/n CU, México D.F. 04510 (Mexico); Instituto Nacional de Rehabilitación, Calz. México Xochimilco No. 289 Col. Arenal de Guadalupe, C.P.14389, Ciudad de México, D.F. (Mexico); Muhl, Stephen [Instituto de Investigaciones en Materiales, UNAM, Circuito Exterior s/n CU, México D.F. 04510 (Mexico); Zeinert, Andreas; Lejeune, Michael; Charvet, Stephane; Barroy, Pierre [Laboratoire de Physique de la Matière Condensée, Université de Picardie Jules Verne, 33 rue Saint Leu, 80039 Amiens Cedex 1 (France); Camps, Enrique [Instituto Nacional de Investigaciones Nucleares, Carretera México-Toluca S/N, kilómetro 36.5. La Marquesa, Municipio de Ocoyoacac, CP 52750, Estado de México (Mexico); Rodil, Sandra E. [Instituto de Investigaciones en Materiales, UNAM, Circuito Exterior s/n CU, México D.F. 04510 (Mexico)

    2015-03-02

    The optical, electrical and structural properties of bismuth oxide thin films deposited by radio frequency reactive magnetron sputtering were studied. The Bi{sub 2}O{sub 3} thin films were grown on Si and glass substrates under different power and substrate temperatures in an oxygen-enriched plasma leading to films with different crystalline phase as evidenced by X-ray diffraction and Raman spectroscopy. The optical properties of the films were measured using ellipsometric spectroscopy and optical transmission spectra. In order to parameterize the optical dispersion functions (n, k) of the films, the Tauc–Lorentz dispersion model was used. The optical bandgap was then assessed by different methods and the results are compared to the thermal variations of the electrical resistivity of the films. It was found that the refractive index, extinction coefficient and optical gap strongly depend on the deposition conditions and the crystalline phase; the fluorite defect cubic δ-Bi{sub 2}O{sub 3} phase showed the lowest optical gap and lower resistivity. - Highlights: • Different bismuth oxide phases were obtained by sputtering. • The power and substrate temperature were the two key parameters. • Room temperature delta-Bi{sub 2}O{sub 3} thin films were obtained. • The optical bandgap was around 1.5 and 2.2 eV, depending on the phase. • The bismuth oxide films presented activation energies around 1 eV.

  17. Titanium dioxide-coated fluorine-doped tin oxide thin films for improving overall photoelectric property

    International Nuclear Information System (INIS)

    Li, Bao-jia; Huang, Li-jing; Ren, Nai-fei; Zhou, Ming

    2014-01-01

    Titanium (Ti) layers were deposited by direct current (DC) magnetron sputtering on commercial fluorine-doped tin oxide (FTO) glasses, followed by simultaneous oxidation and annealing treatment in a tubular furnace to prepare titanium dioxide (TiO 2 )/FTO bilayer films. Large and densely arranged grains were observed on all TiO 2 /FTO bilayer films. The presence of TiO 2 tetragonal rutile phase in the TiO 2 /FTO bilayer films was confirmed by X-ray diffraction (XRD) analysis. The results of parameter optimization indicated that the TiO 2 /FTO bilayer film, which was formed by adopting a temperature of 400 °C and an oxygen flow rate of 15 sccm, had the optimal overall photoelectric property with a figure of merit of 2.30 × 10 −2 Ω −1 , higher than 1.78 × 10 −2 Ω −1 for the FTO single-layer film. After coating a 500 nm-thick AZO layer by DC magnetron sputtering on this TiO 2 /FTO bilayer film, the figure of merit of the trilayer film achieved to a higher figure of merit of 3.12 × 10 −2 Ω −1 , indicating further improvement of the overall photoelectric property. This work may provide a scientific basis and reference for improving overall photoelectric property of transparent conducting oxide (TCO) films.

  18. Opto-electronic properties of bismuth oxide films presenting different crystallographic phases

    International Nuclear Information System (INIS)

    Gomez, Celia L.; Depablos-Rivera, Osmary; Silva-Bermudez, Phaedra; Muhl, Stephen; Zeinert, Andreas; Lejeune, Michael; Charvet, Stephane; Barroy, Pierre; Camps, Enrique; Rodil, Sandra E.

    2015-01-01

    The optical, electrical and structural properties of bismuth oxide thin films deposited by radio frequency reactive magnetron sputtering were studied. The Bi 2 O 3 thin films were grown on Si and glass substrates under different power and substrate temperatures in an oxygen-enriched plasma leading to films with different crystalline phase as evidenced by X-ray diffraction and Raman spectroscopy. The optical properties of the films were measured using ellipsometric spectroscopy and optical transmission spectra. In order to parameterize the optical dispersion functions (n, k) of the films, the Tauc–Lorentz dispersion model was used. The optical bandgap was then assessed by different methods and the results are compared to the thermal variations of the electrical resistivity of the films. It was found that the refractive index, extinction coefficient and optical gap strongly depend on the deposition conditions and the crystalline phase; the fluorite defect cubic δ-Bi 2 O 3 phase showed the lowest optical gap and lower resistivity. - Highlights: • Different bismuth oxide phases were obtained by sputtering. • The power and substrate temperature were the two key parameters. • Room temperature delta-Bi 2 O 3 thin films were obtained. • The optical bandgap was around 1.5 and 2.2 eV, depending on the phase. • The bismuth oxide films presented activation energies around 1 eV

  19. Titanium dioxide-coated fluorine-doped tin oxide thin films for improving overall photoelectric property

    Energy Technology Data Exchange (ETDEWEB)

    Li, Bao-jia, E-mail: bjia_li@126.com [School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013 (China); Jiangsu Provincial Key Laboratory of Center for Photon Manufacturing Science and Technology, Jiangsu University, Zhenjiang 212013 (China); Huang, Li-jing [School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013 (China); Jiangsu Provincial Key Laboratory of Center for Photon Manufacturing Science and Technology, Jiangsu University, Zhenjiang 212013 (China); Ren, Nai-fei [Jiangsu Provincial Key Laboratory of Center for Photon Manufacturing Science and Technology, Jiangsu University, Zhenjiang 212013 (China); School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); Zhou, Ming [The State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China)

    2014-01-30

    Titanium (Ti) layers were deposited by direct current (DC) magnetron sputtering on commercial fluorine-doped tin oxide (FTO) glasses, followed by simultaneous oxidation and annealing treatment in a tubular furnace to prepare titanium dioxide (TiO{sub 2})/FTO bilayer films. Large and densely arranged grains were observed on all TiO{sub 2}/FTO bilayer films. The presence of TiO{sub 2} tetragonal rutile phase in the TiO{sub 2}/FTO bilayer films was confirmed by X-ray diffraction (XRD) analysis. The results of parameter optimization indicated that the TiO{sub 2}/FTO bilayer film, which was formed by adopting a temperature of 400 °C and an oxygen flow rate of 15 sccm, had the optimal overall photoelectric property with a figure of merit of 2.30 × 10{sup −2} Ω{sup −1}, higher than 1.78 × 10{sup −2} Ω{sup −1} for the FTO single-layer film. After coating a 500 nm-thick AZO layer by DC magnetron sputtering on this TiO{sub 2}/FTO bilayer film, the figure of merit of the trilayer film achieved to a higher figure of merit of 3.12 × 10{sup −2} Ω{sup −1}, indicating further improvement of the overall photoelectric property. This work may provide a scientific basis and reference for improving overall photoelectric property of transparent conducting oxide (TCO) films.

  20. Surface and sub-surface thermal oxidation of ruthenium thin films

    NARCIS (Netherlands)

    Coloma Ribera, R.; van de Kruijs, Robbert Wilhelmus Elisabeth; Zoethout, E.; Yakshin, Andrey; Bijkerk, Frederik

    2014-01-01

    For next generation Extreme UV photolithography, multilayer coatings may require protective capping layers against surface contamination. Ruthenium, as a low-oxidation metal, is often used as a reference material. The oxidation behaviour of Ru thin films has been studied using X-ray reflectometry

  1. Rare earth [beta]-diketonate and carboxylate metal complexes as precursors for MOCVD of oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Kuzmina, N.P. (Dept. of Chemistry, Moscow State Univ. (Russian Federation)); Martynenko, L.I. (Dept. of Chemistry, Moscow State Univ. (Russian Federation)); Tu, Z.A. (Dept. of Chemistry, Moscow State Univ. (Russian Federation)); Kaul, A.R. (Dept. of Chemistry, Moscow State Univ. (Russian Federation)); Girichev, G.V. (Dept. of Chemistry, Moscow State Univ. (Russian Federation)); Giricheva, N.I. (Dept. of Chemistry, Moscow State Univ. (Russian Federation)); Rykov, A.N. (Dept. of Chemistry, Moscow State Univ. (Russian Federation)); Korenev, Y.M. (Dept. of Chemistry, Moscow State Univ. (Russian Federation))

    1993-08-01

    Volatile and thermostable complexes of lanthanide acetylacetonates and pivalates were obtained and investigated by different methods. These compounds were used for lanthanide oxide containing film producing and for fabrication of silica optical fibers doped by lanthanide oxide. The properties of these and already known volatile precursors are compared. (orig.).

  2. Rare earth β-diketonate and carboxylate metal complexes as precursors for MOCVD of oxide films

    International Nuclear Information System (INIS)

    Kuzmina, N.P.; Martynenko, L.I.; Tu, Z.A.; Kaul, A.R.; Girichev, G.V.; Giricheva, N.I.; Rykov, A.N.; Korenev, Y.M.

    1993-01-01

    Volatile and thermostable complexes of lanthanide acetylacetonates and pivalates were obtained and investigated by different methods. These compounds were used for lanthanide oxide containing film producing and for fabrication of silica optical fibers doped by lanthanide oxide. The properties of these and already known volatile precursors are compared. (orig.)

  3. Thermoluminescent response of aluminium oxide thin films subject to gamma irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Arrieta, A.; Escobar A, L.; Camps, E.; Villagran, E.; Gonzalez, P.R

    2006-07-01

    The thermoluminescent (TL) properties of amorphous aluminium oxide thin films (thicknesses as low as 0.3 {mu}m) subjected to gamma (Co-60) irradiation are reported. Aluminium oxide thin films were prepared by laser ablation from an Al{sub 2}O{sub 3} target using a Nd: YAG laser with emission at the fundamental line. The films were exposed to gamma radiation (Co-60) in order to study their TL response. Thermoluminescence glow curves exhibited two peaks at 110 and 176 C. The high temperature peak shows good stability and 30% fading in the first 5 days after irradiation. A linear relationship between absorbed dose and the thermoluminescent response for doses span from 150 mGy to 100 Gy was observed. These results suggest that aluminium oxide thin films are suitable for detection and monitoring of gamma radiation. (Author)

  4. Fabrication and characterization of NiO based metal-insulator-metal diode using Langmuir-Blodgett method for high frequency rectification

    Science.gov (United States)

    Azad, Ibrahim; Ram, Manoj K.; Goswami, D. Yogi; Stefanakos, Elias

    2018-04-01

    Thin film metal-insulator-metal (MIM) diodes have attracted significant attention for use in infrared energy harvesting and detection applications. As demonstrated over the past decades, MIM or metal-insulator-insulator-metal (MIIM) diodes can operate at the THz frequencies range by quantum tunneling of electrons. The aim of this work is to synthesize required ultra-thin insulating layers and fabricate MIM diodes using the Langmuir-Blodgett (LB) technique. The nickel stearate (NiSt) LB precursor film was deposited on glass, silicon (Si), ITO glass and gold coated silicon substrates. The photodesorption (UV exposure) and the thermodesorption (annealing at 100 °C and 350 °C) methods were used to remove organic components from the NiSt LB film and to achieve a uniform homogenous nickel oxide (NiO) film. These ultrathin NiO films were characterized by EDS, AFM, FTIR and cyclic voltammetry methods, respectively. The MIM diode was fabricated by depositing nickel (Ni) on the NiO film, all on a gold (Au) plated silicon (Si) substrate. The current (I)-voltage (V) characteristics of the fabricated diode were studied to understand the conduction mechanism assumed to be tunneling of electron through the ultra-thin insulating layer. The sensitivity of the diode was measured to be as high as 35 V-1. The diode resistance was ˜100 ohms (at a bias voltage of 0.60 V), and the rectification ratio was about 22 (for a signal voltage of ±200 mV). At the bias point, the diode response demonstrated significant non-linearity and high asymmetry, which are very desirable characteristics for applications in infrared detection and harvesting.

  5. Fabrication and characterization of NiO based metal−insulator−metal diode using Langmuir-Blodgett method for high frequency rectification

    Directory of Open Access Journals (Sweden)

    Ibrahim Azad

    2018-04-01

    Full Text Available Thin film metal–insulator–metal (MIM diodes have attracted significant attention for use in infrared energy harvesting and detection applications. As demonstrated over the past decades, MIM or metal-insulator-insulator-metal (MIIM diodes can operate at the THz frequencies range by quantum tunneling of electrons. The aim of this work is to synthesize required ultra-thin insulating layers and fabricate MIM diodes using the Langmuir-Blodgett (LB technique. The nickel stearate (NiSt LB precursor film was deposited on glass, silicon (Si, ITO glass and gold coated silicon substrates. The photodesorption (UV exposure and the thermodesorption (annealing at 100 °C and 350 °C methods were used to remove organic components from the NiSt LB film and to achieve a uniform homogenous nickel oxide (NiO film. These ultrathin NiO films were characterized by EDS, AFM, FTIR and cyclic voltammetry methods, respectively. The MIM diode was fabricated by depositing nickel (Ni on the NiO film, all on a gold (Au plated silicon (Si substrate. The current (I-voltage (V characteristics of the fabricated diode were studied to understand the conduction mechanism assumed to be tunneling of electron through the ultra-thin insulating layer. The sensitivity of the diode was measured to be as high as 35 V-1. The diode resistance was ∼100 ohms (at a bias voltage of 0.60 V, and the rectification ratio was about 22 (for a signal voltage of ±200 mV. At the bias point, the diode response demonstrated significant non-linearity and high asymmetry, which are very desirable characteristics for applications in infrared detection and harvesting.

  6. Deposition of indium tin oxide films on acrylic substrates by radiofrequency magnetron sputtering

    International Nuclear Information System (INIS)

    Chiou, B.S.; Hsieh, S.T.; Wu, W.F.

    1994-01-01

    Indium tin oxide (ITO) films were deposited onto acrylic substrates by rf magnetron sputtering. Low substrate temperature (< 80 C) and low rf power (< 28 W) were maintained during sputtering to prevent acrylic substrate deformation. The influence of sputtering parameters, such as rf power, target-to-substrate distance, and chamber pressure, on the film deposition rate, the electrical properties, as well as the optical properties of the deposited films was investigated. Both the refractive index and the extinction coefficient were derived. The high reflection at wavelengths greater than 3 μm made these sputtered ITO films applicable to infrared mirrors

  7. Characteristics of tungsten oxide thin films prepared on the flexible substrates using pulsed laser deposition

    International Nuclear Information System (INIS)

    Suda, Yoshiaki; Kawasaki, Hiroharu; Ohshima, Tamiko; Yagyuu, Yoshihito

    2008-01-01

    Tungsten trioxide (WO 3 ) thin films have been prepared on the flexible indium tin oxide (ITO) substrates by pulsed laser deposition (PLD) using WO 3 targets in oxygen gas. Color of the WO 3 film on the flexible ITO substrates depends on the oxygen gas mixture. The plasma plume produced by PLD using a Nd:YAG laser and WO 3 target is investigated by temporal and spatial-resolved optical emission spectroscopy. WO 3 films prepared on the flexible ITO substrates show electrochromic properties, even when the substrates are bent. The film color changes from blue to transparent within 10-20 s after the applied DC voltage is turned off

  8. Electrochemical capacitance of nanocomposite films formed by loading carbon nanotubes with ruthenium oxide

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jae-Kyung [Department of Chemical Engineering, University of Seoul, 90 Chonnong-dong, Tongdaemun-gu, Seoul (Korea, Republic of); Pathan, Habib M.; Jung, Kwang-Deog; Joo, Oh-Shim [Eco-Nano Research Center, Korea Institute of Science and Technology (KIST), P.O. Box 131, Cheongryang, Seoul (Korea, Republic of)

    2006-09-22

    This work reports the supercapacitive properties of composite films of multiwalled carbon nanotubes (MWNT) and ruthenium oxide (RuO{sub 2}). Transmission and scanning electron microscopy, cyclic voltammetry, and electrochemical studies revealed that the nanoporous three-dimensional arrangement of RuO{sub 2}-coated MWNT in these films facilitated the improvement of electron and ion transfer relative to MWNT films. The capacitance was measured for films of different RuO{sub 2} loading, revealing specific capacitances per mass as high as 628Fg{sup -1}. The energy storage density of the electrode has increased about three times as compared to MWNT treated with piranha solution. (author)

  9. Highly Sensitive and Fast Response Colorimetric Humidity Sensors Based on Graphene Oxides Film.

    Science.gov (United States)

    Chi, Hong; Liu, Yan Jun; Wang, FuKe; He, Chaobin

    2015-09-16

    Uniform graphene oxide (GO) film for optical humidity sensing was fabricated by dip-coating technique. The resulting GO thin film shows linear optical shifts in the visible range with increase of humidity in the whole relative humidity range (from dry state to 98%). Moreover, GO films exhibit ultrafast sensing to moisture within 250 ms because of the unique atomic thinness and superpermeability of GO sheets. The humidity sensing mechanism was investigated using XRD and computer simulation. The ultrasensitive humidity colorimetric properties of GOs film may enable many potential applications such as disposable humidity sensors for packaging, health, and environmental monitoring.

  10. Optical and electrical characterizations of nanocomposite film of titania adsorbed onto oxidized multiwalled carbon nanotubes

    International Nuclear Information System (INIS)

    Feng Wei; Feng Yiyu; Wu Zigang; Fujii, Akihiko; Ozaki, Masanori; Yoshino, Katsumi

    2005-01-01

    Composite film containing titania electrostatically linked to oxidized multiwalled carbon nanotubes (TiO 2 -s-MWNTs) was prepared from a suspension of TiO 2 nanoparticles in soluble carbon nanotubes. The structure of the film was analysed principally by Fourier transform infrared spectroscopy, scanning electron micrography and x-ray diffraction. The optical and electrical characterizations of the film were investigated by UV-vis spectrum, photoluminescence and photoconductivity. The enhancement of photocurrent in the TiO 2 -s-MWNT film is discussed by taking the photoinduced charge transfer between the MWNT and TiO 2 into consideration

  11. Rapid deposition process for zinc oxide film applications in pyroelectric devices

    International Nuclear Information System (INIS)

    Hsiao, Chun-Ching; Yu, Shih-Yuan

    2012-01-01

    Aerosol deposition (AD) is a rapid process for the deposition of films. Zinc oxide is a low toxicity and environmentally friendly material, and it possesses properties such as semiconductivity, pyroelectricity and piezoelectricity without the poling process. Therefore, AD is used to accelerate the manufacturing process for applications of ZnO films in pyroelectric devices. Increasing the temperature variation rate in pyroelectric films is a useful method for enhancing the responsivity of pyroelectric devices. In the present study, a porous ZnO film possessing the properties of large heat absorption and high temperature variation rate is successfully produced by the AD rapid process and laser annealing for application in pyroelectric devices. (paper)

  12. Influence of air flow rate on structural and electrical properties of undoped indium oxide thin films

    International Nuclear Information System (INIS)

    Mirzapour, S.; Rozati, S.M.; Takwale, M.G.; Marathe, B.R.; Bhide, V.G.

    1993-01-01

    Using the spray pyrolysis technique thin films of indium oxide were prepared on Corning glass (7059) at a substrate temperature of 425 C at different flow rates. The electrical and structural properties of these films were studied. The Hall measurements at room temperature showed that the films prepared in an air flow rate of 7 litre min -1 have the highest mobility of 47 cm 2 V -1 s -1 and a minimum resistivity of 1.125 x 10 -3 Ω cm. The X-ray diffraction patterns showed that the films have a preferred orientation of [400] which peaks at the air flow rate of 7 litre min -1 . (orig.)

  13. Semiconducting properties of oxide films formed onto an Nb electrode in NaOH solutions

    Directory of Open Access Journals (Sweden)

    VLADIMIR D. JOVIC

    2008-03-01

    Full Text Available In this paper, the results of the potentiostatic formation of homogeneous and heterogeneous, nano-crystalline passive films of Nb2O5 onto an Nb electrode in NaOH solutions of different concentrations at potentials lower than 3.0 V vs. SCE are presented. The semiconducting properties of such films were investigated by EIS measurements. After fitting the EIS results by appropriate equivalent circuits, the space charge capacitance (Csc and space charge resistance (Rsc of these films were determined. The donor density (Nsc, flat band potential (Efb and thickness of the space charge layer (dsc for such oxide films were determined from the corresponding Mott–Schottky (M–S plots. It is shown that all oxide films were n-type semiconductors in a certain potential range.

  14. Indium Tin Oxide thin film gas sensors for detection of ethanol vapours

    International Nuclear Information System (INIS)

    Vaishnav, V.S.; Patel, P.D.; Patel, N.G.

    2005-01-01

    Indium Tin Oxide (ITO: In 2 O 3 + 17% SnO 2 ) thin films grown on alumina substrate at 648 K temperatures using direct evaporation method with two gold pads deposited on the top for electrical contacts were exposed to ethanol vapours (200-2500 ppm). The operating temperature of the sensor was optimized. The sensitivity variation of films having different thickness was studied. The sensitivity of the films deposited on Si substrates was studied. The response of the film with MgO catalytic layer on sensitivity and selectivity was observed. A novel approach of depositing thin stimulating layer of various metals/oxides below the ITO film was tried and tested

  15. Influence of gaseous annealing environment on the properties of indium-tin-oxide thin films

    International Nuclear Information System (INIS)

    Wang, R.X.; Beling, C.D.; Fung, S.; Djurisic, A.B.; Ling, C.C.; Li, S.

    2005-01-01

    The influence of postannealing in different gaseous environments on the optical properties of indiu-tin-oxide (ITO) thin films deposited on glass substrates using e-beam evaporation has been systematically investigated. It is found that the annealing conditions affect the optical and electrical properties of the films. Atomic force microscopy, x-ray diffraction, and x-ray photoemission spectroscopy (XPS) were employed to obtain information on the chemical state and crystallization of the films. These data suggest that the chemical states and surface morphology of the ITO film are strongly influenced by the gaseous environment during the annealing process. The XPS data indicate that the observed variations in the optical transmittance can be explained by oxygen incorporation into the film, decomposition of the indium oxide phases, as well as the removal of metallic In

  16. Optical and structural properties of FeSe2 thin films obtained by selenization of sprayed amorphous iron oxide films

    International Nuclear Information System (INIS)

    Ouertani, B.; Ouerfelli, J.; Saadoun, M.; Zribi, M.; Rabha, M.Ben; Bessais, B.; Ezzaouia, H.

    2006-01-01

    We report in this work the optical and structural properties of iron diselenide films (FeSe 2 ) obtained by selenization under vacuum of amorphous iron oxide films predeposited by spray pyrolysis. The structure of the FeSe 2 films was investigated by scanning electron microscopy (SEM), microprobe analyses, atomic force microscopy (AFM) and X-ray diffraction (XRD). XRD and micro-probe analyses showed that FeSe 2 as well as FeSe 2-x phases begin to appear at a selenization temperature of 500 deg. C. As the selenization temperature rises, the iron diselenide films become more stoichiometric with a dominance of the FeSe 2 phase. At 550 deg. C, a single FeSe 2 phase having good crystallinity was obtained. At 600 deg. C, two phases were detected: the major one corresponds to Fe 3 O 4 , and the minor one to FeSe 2 . SEM surface views show that FeSe 2 films have granular structure with small spherical crystallites. However, layered and clustered FeSe 2 films were found, respectively, at 550 deg. C and 600 deg. C. Absorption measurements show that iron diselenide films have a direct and an indirect gaps of about 1.03 eV and 0.3 eV, which were suggested to be due to the stoichiometric FeSe 2 phase and to a Fe-rich non-stoichiometric phase, respectively

  17. Synthesis, nanostructure and magnetic properties of FeCo-reduced graphene oxide composite films by one-step electrodeposition

    International Nuclear Information System (INIS)

    Cao, Derang; Li, Hao; Wang, Zhenkun; Wei, Jinwu; Wang, Jianbo; Liu, Qingfang

    2015-01-01

    FeCo-reduced graphene oxide (FeCo-RGO) composite film was fabricated on indium tin oxide substrate using one-step electrodeposition method. Raman spectroscopy and field emission scanning electron microscope results show that the reduced graphene oxide is coprecipitated with the FeCo film. The energy-dispersive spectrometer results demonstrate that the atomic ratio of Fe/Co in FeCo-RGO composite film is larger than that of the FeCo film under the same fabrication condition. As a result, the FeCo-RGO composite film exhibits good soft magnetic properties and high-frequency properties as well as the FeCo film. The magnetic anisotropy field and saturation magnetization of FeCo-RGO composite film are increased when compared with FeCo film. Furthermore, the ferromagnetic resonance frequency is improved from 2.15 GHz for the FeCo film to 3.9 GHz for the FeCo-RGO composite film. - Highlights: • FeCo-reduced graphene oxide composite film was fabricated on indium tin oxide substrate. • One step electrodeposition method was used. • Good soft magnetic properties were exhibited by the composite films. • Increase of resonance frequency from 2.15 GHz for FeCo film to 3.9 GHz for composite film

  18. Electrochromic and electrochemical capacitive properties of tungsten oxide and its polyaniline nanocomposite films obtained by chemical bath deposition method

    CSIR Research Space (South Africa)

    Nwanya, AC

    2014-05-01

    Full Text Available Polyanine and its nanocomposite WO3/PANI films were deposited on fluorine doped tin oxide (FTO) glassslides by simple chemical bath deposition method. The morphology structure of the composite film wasstudied using atomic force microscopy (AFM...

  19. Vacuum-free, maskless patterning of Ni electrodes by laser reductive sintering of NiO nanoparticle ink and its application to transparent conductors.

    Science.gov (United States)

    Lee, Daeho; Paeng, Dongwoo; Park, Hee K; Grigoropoulos, Costas P

    2014-10-28

    We introduce a method for direct patterning of Ni electrodes through selective laser direct writing (LDW) of NiO nanoparticle (NP) ink. High-resolution Ni patterns are generated from NiO NP thin films by a vacuum-free, lithography-free, and solution-processable route. In particular, a continuous wave laser is used for the LDW reductive sintering of the metal oxide under ambient conditions with the aid of reducing agents in the ink solvent. Thin (∼ 40 nm) Ni electrodes of glossy metallic surfaces with smooth morphology and excellent edge definition can be fabricated. By applying this method, we demonstrate a high transmittance (>87%), electrically conducting panel for a touch screen panel application. The resistivity of the Ni electrode is less than an order of magnitude higher compared to that of the bulk Ni. Mechanical bending test, tape-pull test, and ultrasonic bath test confirm the robust adhesion of the electrodes on glass and polymer substrates.

  20. Investigation of Zirconium Oxide Films in Different Dissolved Hydrogen Concentration

    International Nuclear Information System (INIS)

    Kim, Taeho; Choi, Kyoung Joon; Yoo, Seung Chang; Kim, Ji Hyun

    2016-01-01

    It has been reported that in pre-transition zirconium oxide, the volume fraction of tetragonal zirconium oxide increased near the oxide/metal (O/M) interface, and the sub-stoichiometric zirconium oxide layer was observed. The diffusion of oxygen ion through the oxide layer is the rate-limiting process during the pre-transition oxidation process, and this diffusion mainly occurs in the grain boundaries. The two layered oxide structure is formed in pre-transition oxide for the zirconium alloy in high-temperature water environment. It is known that the corrosion rate is related to the volume fraction of zirconium oxide and the pores in the oxides; therefore, the aim of this paper is to investigate the oxidation behavior in the pre-transition zirconium oxide in high-temperature water chemistry. In this study, in situ Raman and TEM analysis were conducted for investigating the phase transformation of zirconium alloy in primary water. From this study, the following conclusions are drawn: 1. The zirconium alloy was oxidized in primary water chemistry for 100 d, and Raman and TEM were measured after 30, 50, 80, and 100 d from start-up. 2. TEM and FFT analysis showed that the zirconium oxide mostly consisted of the monoclinic phase. The tetragonal zirconium oxide was just found near the O/M interface

  1. Ethanol Sensing Properties of Au-functionalized NiO Nanoparticles

    International Nuclear Information System (INIS)

    Park, Sunghoon; Kheel, Hyejoon; Sun, Gun-Joo; Hyun, Soong Keun; Park, Sang Eon; Lee, Chongmu

    2016-01-01

    Pristine and Au-functionalized nickel oxide (NiO) nanoparticles were synthesized via a simple solvo thermal route and the ethanol sensing properties of multiple-networked Au-doped and undoped NiO nanoparticle sensors were examined. The pristine and Au-functionalized NiO nanoparticle sensor showed responses of 442 and 273%, respectively, to 1000 ppm of ethanol at 325 .deg. C. The Au-functionalized NiO nanoparticle sensor showed faster response than the pristine NiO counterpart, whereas the recovery time of the former was similar to that of the latter. The optimal operating temperature of the pristine and Au-functionalized NiO nanoparticles was 325 and 350 .deg. C, respectively, by Au-doping. Both the pristine and Au-functionalized NiO nanoparticle sensors showed selectivity for ethanol gas over methanol, acetone, benzene, and toluene gases. The underlying mechanism of the enhanced sensing performance of the Au-functionalized NiO nanoparticles toward ethanol might be due to modulation of the depletion layer formed around Au particles and the Schottky barriers formed at the Au-NiO junction accompanying ethanol adsorption and desorption, the spill-over effect and high catalytic activity of Au nanoparticles and the smaller diameter of the particles in the Au-functionalized NiO sensor.

  2. Ethanol Sensing Properties of Au-functionalized NiO Nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Park, Sunghoon; Kheel, Hyejoon; Sun, Gun-Joo; Hyun, Soong Keun; Park, Sang Eon; Lee, Chongmu [Inha University, Incheon (Korea, Republic of)

    2016-05-15

    Pristine and Au-functionalized nickel oxide (NiO) nanoparticles were synthesized via a simple solvo thermal route and the ethanol sensing properties of multiple-networked Au-doped and undoped NiO nanoparticle sensors were examined. The pristine and Au-functionalized NiO nanoparticle sensor showed responses of 442 and 273%, respectively, to 1000 ppm of ethanol at 325 .deg. C. The Au-functionalized NiO nanoparticle sensor showed faster response than the pristine NiO counterpart, whereas the recovery time of the former was similar to that of the latter. The optimal operating temperature of the pristine and Au-functionalized NiO nanoparticles was 325 and 350 .deg. C, respectively, by Au-doping. Both the pristine and Au-functionalized NiO nanoparticle sensors showed selectivity for ethanol gas over methanol, acetone, benzene, and toluene gases. The underlying mechanism of the enhanced sensing performance of the Au-functionalized NiO nanoparticles toward ethanol might be due to modulation of the depletion layer formed around Au particles and the Schottky barriers formed at the Au-NiO junction accompanying ethanol adsorption and desorption, the spill-over effect and high catalytic activity of Au nanoparticles and the smaller diameter of the particles in the Au-functionalized NiO sensor.

  3. The growth and evolution of thin oxide films on delta-plutonium surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Garcia Flores, Harry G [Los Alamos National Laboratory; Pugmire, David L [Los Alamos National Laboratory

    2009-01-01

    The common oxides of plutonium are the dioxide (PuO{sub 2}) and the sesquioxide (Pu{sub 2}O{sub 3}). The structure of an oxide on plutonium metal under air at room temperature is typically described as a thick PuO{sub 2} film at the gas-oxide interface with a thinner PuO{sub 2} film near the oxide-metal substrate interface. In a reducing environment, such as ultra high vacuum, the dioxide (Pu{sup 4+}; O/Pu = 2.0) readily converts to the sesquioxide (Pu{sup 3+}; O/Pu = 1.5) with time. In this work, the growth and evolution of thin plutonium oxide films is studied with x-ray photoelectron spectroscopy (XPS) under varying conditions. The results indicate that, like the dioxide, the sesquioxide is not stable on a very clean metal substrate under reducing conditions, resulting in substoichiometric films (Pu{sub 2}O{sub 3-y}). The Pu{sub 2}O{sub 3-y} films prepared exhibit a variety of stoichiometries (y = 0.2-1) as a function of preparation conditions, highlighting the fact that caution must be exercised when studying plutonium oxide surfaces under these conditions and interpreting resulting data.

  4. Laser-Induced, Local Oxidation of Copper Nanoparticle Films During Raman Measurements

    Science.gov (United States)

    Hight Walker, Angela R.; Cheng, Guangjun; Calizo, Irene

    2011-03-01

    The optical properties of gold and silver nanoparticles and their films have been thoroughly investigated as surface enhanced Raman scattering (SERS) substrates and chemical reaction promoters. Similar to gold and silver nanoparticles, copper nanoparticles exhibit distinct plasmon absorptions in the visible region. The work on copper nanoparticles and their films is limited due to their oxidization in air. However, their high reactivity actually provides an opportunity to exploit the laser-induced thermal effect and chemical reactions of these nanoparticles. Here, we present our investigation of the local oxidation of a copper nanoparticle film induced by a visible laser source during Raman spectroscopic measurements. The copper nanoparticle film is prepared by drop-casting chemically synthesized copper colloid onto silicon oxide/silicon substrate. The local oxidation induced by visible lasers in Raman spectroscopy is monitored with the distinct scattering peaks for copper oxides. Optical microscopy and scanning electron microscopy have been used to characterize the laser-induced morphological changes in the film. The results of this oxidation process with different excitation wavelengths and different laser powers will be presented.

  5. XPS and SEM studies of chromium oxide films chemically formed on stainless steel 316 L

    International Nuclear Information System (INIS)

    Stefanov, P.; Marinova, T.

    2000-01-01

    The structure and composition of chromium oxide films formed on stainless steel by immersion in a chromium electrolyte have been studied by SEM and XPS. Cr 2 O 3 crystallites in the range 30-150 nm are fully developed and cover the whole surface. The chemical composition in the depth and the thickness of the oxide layer have been determined by XPS sputter profiles. The oxide film can be described within the framework of a double layer consisting of a thin outer hydrated layer and an inner layer of Cr 2 O 3 . (orig.)

  6. Preparation of Aluminum Nanomesh Thin Films from an Anodic Aluminum Oxide Template as Transparent Conductive Electrodes

    Science.gov (United States)

    Li, Yiwen; Chen, Yulong; Qiu, Mingxia; Yu, Hongyu; Zhang, Xinhai; Sun, Xiao Wei; Chen, Rui

    2016-02-01

    We have employed anodic aluminum oxide as a template to prepare ultrathin, transparent, and conducting Al films with a unique nanomesh structure for transparent conductive electrodes. The anodic aluminum oxide template is obtained through direct anodization of a sputtered Al layer on a glass substrate, and subsequent wet etching creates the nanomesh metallic film. The optical and conductive properties are greatly influenced by experimental conditions. By tuning the anodizing time, transparent electrodes with appropriate optical transmittance and sheet resistance have been obtained. The results demonstrate that our proposed strategy can serve as a potential method to fabricate low-cost TCEs to replace conventional indium tin oxide materials.

  7. Correlation of nanostructure and charge transport properties of oxidized a -SiC:H films

    Energy Technology Data Exchange (ETDEWEB)

    Gordienko, S.O.; Nazarov, A.N.; Vasin, A.V.; Rusavsky, A.V.; Lysenko, V.S. [Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospekt Nauki 41, 03028 Kyiv (Ukraine)

    2012-06-15

    This paper considers the influence of low temperature oxidation on structural and electrical properties of amorphous carbon-rich a -Si{sub 1-x}C{sub x}:H thin films fabricated by reactive RF magnetron sputtering. It is shown that oxidation leads to formation of SiO{sub x} matrix with graphite-like carbon inclusions. Such conductive precipitates has a strong effect on charge transport in oxidized a -Si{sub 1-x}C{sub x}:H films (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Assessing the antimicrobial activity of zinc oxide thin films using disk diffusion and biofilm reactor

    International Nuclear Information System (INIS)

    Gittard, Shaun D.; Perfect, John R.; Monteiro-Riviere, Nancy A.; Wei Wei; Jin Chunming; Narayan, Roger J.

    2009-01-01

    The electronic and chemical properties of semiconductor materials may be useful in preventing growth of microorganisms. In this article, in vitro methods for assessing microbial growth on semiconductor materials will be presented. The structural and biological properties of silicon wafers coated with zinc oxide thin films were evaluated using atomic force microscopy, X-ray photoelectron spectroscopy, and MTT viability assay. The antimicrobial properties of zinc oxide thin films were established using disk diffusion and CDC Biofilm Reactor studies. Our results suggest that zinc oxide and other semiconductor materials may play a leading role in providing antimicrobial functionality to the next-generation medical devices

  9. Transparent conductive zinc oxide basics and applications in thin film solar cells

    CERN Document Server

    Klein, Andreas; Rech, Bernd

    2008-01-01

    Zinc oxide (ZnO) belongs to the class of transparent conducting oxides which can be used as transparent electrodes in electronic devices or heated windows. In this book the material properties of, the deposition technologies for, and applications of zinc oxide in thin film solar cells are described in a comprehensive manner. Structural, morphological, optical and electronic properties of ZnO are treated in this review. The editors and authors of this book are specialists in deposition, analysis and fabrication of thin-film solar cells and especially of ZnO. This book is intended as an overview and a data collection for students, engineers and scientist.

  10. Study of structural and electrical properties of thin NiOx films prepared by ion beam sputtering of Ni and subsequent thermo-oxidation

    Czech Academy of Sciences Publication Activity Database

    Horák, Pavel; Lavrentiev, Vasyl; Bejšovec, Václav; Vacík, Jiří; Daniš, S.; Vrňata, M.; Khun, J.

    2013-01-01

    Roč. 86, č. 11 (2013), s. 470 ISSN 1434-6028 R&D Projects: GA ČR(CZ) GBP108/12/G108 Institutional support: RVO:61389005 Keywords : NiO film * electrical properties Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.463, year: 2013

  11. Epitaxial Oxide Thin Films Grown by Solid Source Metal-Organic Chemical Vapor Deposition.

    Science.gov (United States)

    Lu, Zihong

    1995-01-01

    The conventional liquid source metal-organic chemical vapor deposition (MOCVD) technique is capable of producing large area, high quality, single crystal semiconductor films. However, the growth of complex oxide films by this method has been hampered by a lack of suitable source materials. While chemists have been actively searching for new source materials, the research work reported here has demonstrated the successful application of solid metal-organic sources (based on tetramethylheptanedionate) to the growth of high quality thin films of binary compound cerium dioxide (CeO_2), and two more complex materials, the ternary compound lithium niobate (LiNbO_3), with two cations, and the quaternary compound strontium barium niobate (SBN), with three cations. The growth of CeO_2 thin films on (1012)Al_2O_3 substrates has been used as a model to study the general growth behavior of oxides. Factors affecting deposition rate, surface morphology, out-of-plane mosaic structure, and film orientation have been carefully investigated. A kinetic model based on gas phase prereaction is proposed to account for the substrate temperature dependence of film orientation found in this system. Atomically smooth, single crystal quality cerium dioxide thin films have been obtained. Superconducting YBCO films sputtered on top of solid source MOCVD grown thin cerium dioxide buffer layers on sapphire have been shown to have physical properties as good as those of YBCO films grown on single crystal MgO substrates. The thin film growth of LiNbO_3 and Sr_{1-x}Ba _{x}Nb_2 O_6 (SBN) was more complex and challenging. Phase purity, transparency, in-plane orientation, and the ferroelectric polarity of LiNbO _3 films grown on sapphire substrates was investigated. The first optical quality, MOCVD grown LiNbO _3 films, having waveguiding losses of less than 2 dB/cm, were prepared. An important aspect of the SBN film growth studies involved finding a suitable single crystal substrate material. Mg

  12. Effect of stress on NiO reduction in solid oxide fuel cells: A new application of energy-resolved neutron imaging

    DEFF Research Database (Denmark)

    Makowska, Malgorzata; Strobl, Markus; Lauridsen, Erik Mejdal

    2015-01-01

    Recently, two new phenomena linking stress field and reduction rates in anode-supported solid oxide fuel cells (SOFCs) have been demonstrated, so-called accelerated creep during reduction and reduction rate enhancement and nucleation due to stress (Frandsen et al., 2014). These complex phenomena...

  13. Influence of sputtering gas pressure on properties of transparent conducting Si-doped zinc oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Qin, Hua; Liu, Hunfa; Lei, Chengxin [Shandong Univ. of Technology, Zibo (China). Dept. of Sciences

    2013-10-15

    Si-doped zinc oxide (SZO, Si 3%) thin films were deposited on glass substrates by means of direct current magnetron sputtering under different pressures. The influence of sputtering pressure on structure, morphology, optical and electrical properties of SZO thin films was investigated. The results reveal that the sputtering pressures have a significant impact on the growth rate, crystal quality and electrical properties of the films, but have little impact on the optical properties of the films. SZO thin film samples grown on glasses are polycrystalline with a hexagonal wurtzite structure and have a preferred orientation along the c-axis perpendicular to the substrate. When the sputtering pressure increases from 2 to 8 Pa, the film surface becomes compact and smooth, the degree of crystallization of the films increases, and the resistivity of films decreases. However, when the sputtering pressure continues to increase from 8 to 10 Pa, the degree of crystallization of the films decreases, the grain size decreases, and the resistivity of the films increases. SZO(3%) thin film deposited at a sputtering pressure of 8 Pa shows the largest carrier concentration, the largest mobility, the lowest resistivity of 3.0 x 10{sup -4} {Omega} cm and a high overall transmission of 93.3% in the visible range. (orig.)

  14. Properties of indium tin oxide films deposited using High Target Utilisation Sputtering

    International Nuclear Information System (INIS)

    Calnan, S.; Upadhyaya, H.M.; Thwaites, M.J.; Tiwari, A.N.

    2007-01-01

    Indium tin oxide (ITO) films were deposited on soda lime glass and polyimide substrates using an innovative process known as High Target Utilisation Sputtering (HiTUS). The influence of the oxygen flow rate, substrate temperature and sputtering pressure, on the electrical, optical and thermal stability properties of the films was investigated. High substrate temperature, medium oxygen flow rate and moderate pressure gave the best compromise of low resistivity and high transmittance. The lowest resistivity was 1.6 x 10 -4 Ω cm on glass while that on the polyimide was 1.9 x 10 -4 Ω cm. Substrate temperatures above 100 deg. C were required to obtain visible light transmittance exceeding 85% for ITO films on glass. The thermal stability of the films was mainly influenced by the oxygen flow rate and thus the initial degree of oxidation. The film resistivity was either unaffected or reduced after heating in vacuum but generally increased for oxygen deficient films when heated in air. The greatest increase in transmittance of oxygen deficient films occurred for heat treatment in air while that of the highly oxidised films was largely unaffected by heating in both media. This study has demonstrated the potential of HiTUS as a favourable deposition method for high quality ITO suitable for use in thin film solar cells

  15. Damp heat stability and annealing behavior of aluminum doped zinc oxide films prepared by magnetron sputtering

    International Nuclear Information System (INIS)

    Tohsophon, T.; Huepkes, J.; Calnan, S.; Reetz, W.; Rech, B.; Beyer, W.; Sirikulrat, N.

    2006-01-01

    The damp heat stability and subsequent vacuum annealing behavior of aluminum doped zinc oxide (AZO) films was investigated using Hall effect measurements, X-ray diffraction (XRD) and optical spectrometry techniques. The AZO films were deposited on glass or silicon wafers using reactive and non-reactive magnetron sputtering from metallic and ceramic targets, respectively. Additionally, we characterized surface textured AZO films, which are used as light scattering transparent conductive oxide (TCO) in silicon thin film solar cells. For all films a degradation of the electrical film properties was found after the damp heat treatment. For thick compact films, with large grain size, only a small increase in the electrical resistivity was observed, whereas less compact films prepared at high deposition pressures or very thin films (< 300 nm) showed an increase in resistivity by up to a factor of three already after 300 h. The conductivity degradation during damp heat treatment could be largely reversed by annealing in vacuum. However, annealing temperatures of at least 150 deg. C were required. Possible mechanisms explaining the experimental results are discussed

  16. Surface chemistry and cytotoxicity of reactively sputtered tantalum oxide films on NiTi plates

    Energy Technology Data Exchange (ETDEWEB)

    McNamara, K. [Materials and Surface Science Institute, University of Limerick, Limerick (Ireland); Department of Physics & Energy, University of Limerick, Limerick (Ireland); Kolaj-Robin, O.; Belochapkine, S.; Laffir, F. [Materials and Surface Science Institute, University of Limerick, Limerick (Ireland); Gandhi, A.A. [Materials and Surface Science Institute, University of Limerick, Limerick (Ireland); Department of Physics & Energy, University of Limerick, Limerick (Ireland); Tofail, S.A.M., E-mail: tofail.syed@ul.ie [Materials and Surface Science Institute, University of Limerick, Limerick (Ireland); Department of Physics & Energy, University of Limerick, Limerick (Ireland)

    2015-08-31

    NiTi, an equiatomic alloy containing nickel and titanium, exhibits unique properties such as shape memory effect and superelasticity. NiTi also forms a spontaneous protective titanium dioxide (TiO{sub 2}) layer that allows its use in biomedical applications. Despite the widely perceived biocompatibility there remain some concerns about the sustainability of the alloy's biocompatibility due to the defects in the TiO{sub 2} protective layer and the presence of high amount of sub-surface Ni, which can give allergic reactions. Many surface treatments have been investigated to try to improve both the corrosion resistance and biocompatibility of this layer. For such purposes, we have sputter deposited tantalum (Ta) oxide thin films onto the surface of the NiTi alloy. Despite being one of the promising metals for biomedical applications, Ta, and its various oxides and their interactions with cells have received relatively less attention. The oxidation chemistry, crystal structure, morphology and biocompatibility of these films have been investigated. In general, reactive sputtering especially in the presence of a low oxygen mixture yields a thicker film with better control of the film quality. The sputtering power influenced the surface oxidation states of Ta. Both microscopic and quantitative cytotoxicity measurements show that Ta films on NiTi are biocompatible with little to no variation in cytotoxic response when the surface oxidation state of Ta changes. - Highlights: • Reactive sputtering in low oxygen mixture yields thicker better quality films. • Sputtering power influenced surface oxidation states of Ta. • Cytotoxicity measurements show Ta films on NiTi are biocompatible. • Little to no variation in cytotoxic response when oxidation state changes.

  17. The effect of hydrogen peroxide on uranium oxide films on 316L stainless steel

    Science.gov (United States)

    Wilbraham, Richard J.; Boxall, Colin; Goddard, David T.; Taylor, Robin J.; Woodbury, Simon E.

    2015-09-01

    For the first time the effect of hydrogen peroxide on the dissolution of electrodeposited uranium oxide films on 316L stainless steel planchets (acting as simulant uranium-contaminated metal surfaces) has been studied. Analysis of the H2O2-mediated film dissolution processes via open circuit potentiometry, alpha counting and SEM/EDX imaging has shown that in near-neutral solutions of pH 6.1 and at [H2O2] ⩽ 100 μmol dm-3 the electrodeposited uranium oxide layer is freely dissolving, the associated rate of film dissolution being significantly increased over leaching of similar films in pH 6.1 peroxide-free water. At H2O2 concentrations between 1 mmol dm-3 and 0.1 mol dm-3, formation of an insoluble studtite product layer occurs at the surface of the uranium oxide film. In analogy to corrosion processes on common metal substrates such as steel, the studtite layer effectively passivates the underlying uranium oxide layer against subsequent dissolution. Finally, at [H2O2] > 0.1 mol dm-3 the uranium oxide film, again in analogy to common corrosion processes, behaves as if in a transpassive state and begins to dissolve. This transition from passive to transpassive behaviour in the effect of peroxide concentration on UO2 films has not hitherto been observed or explored, either in terms of corrosion processes or otherwise. Through consideration of thermodynamic solubility product and complex formation constant data, we attribute the transition to the formation of soluble uranyl-peroxide complexes under mildly alkaline, high [H2O2] conditions - a conclusion that has implications for the design of both acid minimal, metal ion oxidant-free decontamination strategies with low secondary waste arisings, and single step processes for spent nuclear fuel dissolution such as the Carbonate-based Oxidative Leaching (COL) process.

  18. Screen-printed Tin-doped indium oxide (ITO) films for NH3 gas sensing

    International Nuclear Information System (INIS)

    Mbarek, Hedia; Saadoun, Moncef; Bessais, Brahim

    2006-01-01

    Gas sensors using metal oxides have several advantageous features such as simplicity in device structure and low cost fabrication. In this work, Tin-doped indium oxide (ITO) films were prepared by the screen printing technique onto glass substrates. The granular and porous structure of screen-printed ITO are suitable for its use in gas sensing devices. The resistance of the ITO films was found to be strongly dependent on working temperatures and the nature and concentration of the ambient gases. We show that screen-printed ITO films have good sensing properties toward NH 3 vapours. The observed behaviors are explained basing on the oxidizing or the reducer nature of the gaseous species that react on the surface of the heated semi-conducting oxide

  19. Pulsed laser deposition of transparent conductive oxide thin films on flexible substrates

    Science.gov (United States)

    Socol, G.; Socol, M.; Stefan, N.; Axente, E.; Popescu-Pelin, G.; Craciun, D.; Duta, L.; Mihailescu, C. N.; Mihailescu, I. N.; Stanculescu, A.; Visan, D.; Sava, V.; Galca, A. C.; Luculescu, C. R.; Craciun, V.

    2012-11-01

    The influence of target-substrate distance during pulsed laser deposition of indium zinc oxide (IZO), indium tin oxide (ITO) and aluminium-doped zinc oxide (AZO) thin films grown on polyethylene terephthalate (PET) substrates was investigated. It was found that the properties of such flexible transparent conductive oxide (TCO)/PET electrodes critically depend on this parameter. The TCO films that were deposited at distances of 6 and 8 cm exhibited an optical transmittance higher than 90% in the visible range and electrical resistivities around 5 × 10-4 Ω cm. In addition to these excellent electrical and optical characteristics the films grown at 8 cm distance were homogenous, smooth, adherent, and without cracks or any other extended defects, being suitable for opto-electronic device applications.

  20. Intrinsic stress evolution during amorphous oxide film growth on Al surfaces

    International Nuclear Information System (INIS)

    Flötotto, D.; Wang, Z. M.; Jeurgens, L. P. H.; Mittemeijer, E. J.

    2014-01-01

    The intrinsic stress evolution during formation of ultrathin amorphous oxide films on Al(111) and Al(100) surfaces by thermal oxidation at room temperature was investigated in real-time by in-situ substrate curvature measurements and detailed atomic-scale microstructural analyses. During thickening of the oxide a considerable amount of growth stresses is generated in, remarkably even amorphous, ultrathin Al 2 O 3 films. The surface orientation-dependent stress evolutions during O adsorption on the bare Al surfaces and during subsequent oxide-film growth can be interpreted as a result of (i) adsorption-induced surface stress changes and (ii) competing processes of free volume generation and structural relaxation, respectively

  1. Iron Oxide Films Prepared by Rapid Thermal Processing for Solar Energy Conversion.

    Science.gov (United States)

    Wickman, B; Bastos Fanta, A; Burrows, A; Hellman, A; Wagner, J B; Iandolo, B

    2017-01-16

    Hematite is a promising and extensively investigated material for various photoelectrochemical (PEC) processes for energy conversion and storage, in particular for oxidation reactions. Thermal treatments during synthesis of hematite are found to affect the performance of hematite electrodes considerably. Herein, we present hematite thin films fabricated via one-step oxidation of Fe by rapid thermal processing (RTP). In particular, we investigate the effect of oxidation temperature on the PEC properties of hematite. Films prepared at 750 °C show the highest activity towards water oxidation. These films show the largest average grain size and the highest charge carrier density, as determined from electron microscopy and impedance spectroscopy analysis. We believe that the fast processing enabled by RTP makes this technique a preferred method for investigation of novel materials and architectures, potentially also on nanostructured electrodes, where retaining high surface area is crucial to maximize performance.

  2. The role of polymer films on the oxidation of magnetite nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Letti, C.J. [Universidade de Brasilia, Instituto de Fisica, 70910-000 Brasilia, DF (Brazil); Paterno, L.G. [Universidade de Brasilia, Instituto de Quimica, 70910-000 Brasilia, DF (Brazil); Pereira-da-Silva, M.A. [Instituto de Fisica de São Carlos, USP, 13560-9700 São Carlos, SP (Brazil); Centro Universitario Central Paulista – UNICEP, 13563-470 São Carlos, SP (Brazil); Morais, P.C. [Universidade de Brasilia, Instituto de Fisica, 70910-000 Brasilia, DF (Brazil); Soler, M.A.G., E-mail: soler@unb.br [Universidade de Brasilia, Instituto de Fisica, 70910-000 Brasilia, DF (Brazil)

    2017-02-15

    A detailed investigation about the role of polymer films on the oxidation process of magnetite nanoparticles (∼7 nm diameter), under laser irradiation is performed employing micro Raman spectroscopy. To support this investigation, Fe{sub 3}O{sub 4}-np are synthesized by the co-precipitation method and assembled layer-by-layer with sodium sulfonated polystyrene (PSS). Polymer films (Fe{sub 3}O{sub 4}-np/PSS){sub n} with n=2,3,5,7,10 and 25 bilayers are employed as a model system to study the oxidation process under laser irradiation. Raman data are further processed by principal component analysis. Our findings suggest that PSS protects Fe{sub 3}O{sub 4}-np from oxidation when compared to powder samples, even for the sample with the greater number of bilayers. Further, the oxidation of magnetite to maghemite occurs preferably for thinner films up to 7 bilayers, while the onset for the formation of the hematite phase depends on the laser intensity for thicker films. Water takes part on the oxidation processes of magnetite, the oxidation/phase transformation of Fe{sub 3}O{sub 4}-np is intensified in films with more bilayers, since more water is included in those films. Encapsulation of Fe{sub 3}O{sub 4}-np by PSS in layer-by-layer films showed to be very efficient to avoid the oxidation process in nanosized magnetite. - Graphical abstract: Encapsulation of Fe{sub 3}O{sub 4}-np by PSS in layer-by-layer films avoids the oxidation and phase transformation of nanosized magnetite. - Highlights: • (Fe{sub 3}O{sub 4}-np/PSS){sub n} nanofilms, with n=2 up to 25, where layer-by-layer assembled. • The influence of film architecture on the Fe{sub 3}O{sub 4}-np oxidation was investigated through Raman spectroscopy. • Encapsulation of Fe{sub 3}O{sub 4}-np by PSS showed to be very efficient to avoid the Fe{sub 3}O{sub 4}-np oxidation.

  3. Thin-film method-XRF determination of the composition of rare earth oxides

    International Nuclear Information System (INIS)

    Xiao Deming

    1992-01-01

    The author describes the thin-film sample preparation by precipitation-pumping filtering method and the composition of rare earth oxide materials by XRF determination. The determination limits are 0.01% to 0.17%. The coefficients of variation are in the range of 0.85% to 14.9%. The analytical results of several kinds of rare earth oxide materials show that this method can be applied to the determination of the composition of rare earth oxide mixtures

  4. Aluminium oxide barrier films on polymeric web and their conversion for packaging applications

    OpenAIRE

    Struller, CF; Kelly, PJ; Copeland, NJ; Tobin, V; Assender, HE; Holliday, CW; Read, SJ

    2013-01-01

    In recent years, inorganic transparent barrier layers such as aluminium oxide or silicon oxide deposited onto polymer films have emerged as an attractive alternative to polymer based transparent barrier layers for flexible food packaging materials. For this application, barrier properties against water vapour and oxygen are critical. Aluminium oxide coatings can provide good barrier levels at thicknesses in the nanometre range, compared to several micrometres for polymer-based barrier layers....

  5. Ion beam and dual ion beam sputter deposition of tantalum oxide films

    Science.gov (United States)

    Cevro, Mirza; Carter, George

    1994-11-01

    Ion beam sputter deposition (IBS) and dual ion beam sputter deposition (DIBS) of tantalum oxide films was investigated at room temperature and compared with similar films prepared by e-gun deposition. Optical properties ie refractive index and extinction coefficient of IBS films were determined in the 250 - 1100 nm range by transmission spectrophotometry and at (lambda) equals 632.8 nm by ellipsometry. They were found to be mainly sensitive to the partial pressure of oxygen used as a reactive gas in the deposition process. The maximum value of the refractive index of IBS deposited tantalum oxide films was n equals 2.15 at (lambda) equals 550 nm and the extinction coefficient of order k equals 2 X 10-4. Films deposited by e-gun deposition had refractive index n equals 2.06 at (lambda) equals 550 nm. Films deposited using DIBS ie deposition assisted by low energy Ar and O2 ions (Ea equals 0 - 300 eV) and low current density (Ji equals 0 - 40 (mu) A/cm2) showed no improvement in the optical properties of the films. Preferential sputtering occurred at Ea(Ar) equals 300 eV and Ji equals 20 (mu) A/cm2 and slightly oxygen deficient films were formed. Different bonding states in the tantalum-oxide films were determined by x-ray spectroscopy while composition of the film and contaminants were determined by Rutherford scattering spectroscopy. Tantalum oxide films formed by IBS contained relatively high Ar content (approximately equals 2.5%) originating from the reflected argon neutrals from the sputtering target while assisted deposition slightly increased the Ar content. Stress in the IBS deposited films was measured by the bending technique. IBS deposited films showed compressive stress with a typical value of s equals 3.2 X 109 dyn/cm2. Films deposited by concurrent ion bombardment showed an increase in the stress as a function of applied current density. The maximum was s approximately equals 5.6 X 109 dyn/cm2 for Ea equals 300 eV and Ji equals 35 (mu) A/cm2. All

  6. Ion-beam and dual-ion-beam sputter deposition of tantalum oxide films

    Science.gov (United States)

    Cevro, Mirza; Carter, George

    1995-02-01

    Ion-beam sputter deposition (IBS) and dual-ion-beam sputter deposition (DIBS) of tantalum oxide films was investigated at room temperature and compared with similar films prepared by e-gun deposition. The optical properties, i.e., refractive index and extinction coefficient, of IBS films were determined in the 250- to 1100-nm range by transmission spectrophotometry and at (lambda) equals 632.8 nm by ellipsometry. They were found to be mainly sensitive to the partial pressure of oxygen used as a reactive gas in the deposition process. The maximum value of the refractive index of IBS deposited tantalum oxide films was n equals 2.15 at (lambda) equals 550 nm and the extinction coefficient of order k equals 2 X 10-4. Films deposited by e-gun deposition had refractive index n 2.06 at (lambda) equals 550 nm. Films deposited using DIBS, i.e., deposition assisted by low energy Ar and O2 ions (Ea equals 0 to 300 eV) and low current density (Ji equals 0 to 40 (mu) A/cm2), showed no improvement in the optical properties of the films. Preferential sputtering occurred at Ea(Ar) equals 300 eV and Ji equals 20 (mu) A/cm2 and slightly oxygen deficient films were formed. Different bonding states in the tantalum-oxide films were determined by x-ray spectroscopy, whereas composition of the film and contaminants were determined by Rutherford backscattering spectroscopy (RBS). Tantalum oxide films formed by IBS contained relatively high Ar content (approximately equals 2.5%) originating from the reflected argon neutrals from the sputtering target whereas assisted deposition slightly increased the Ar content. Stress in the IBS-deposited films was measured by the bending technique. IBS-deposited films showed compressive stress with a typical value of s equals 3.2 X 109 dyn/cm2. Films deposited by concurrent ion bombardment showed an increase in the stress as a function of applied current density. The maximum was s approximately equals 5.6 X 109 dyn/cm2 for Ea equals 300 eV and Ji equals

  7. Laser-Induced Reductive Sintering of Nickel Oxide Nanoparticles under Ambient Conditions

    KAUST Repository

    Paeng, Dongwoo; Lee, Daeho; Yeo, Junyeob; Yoo, Jae-Hyuck; Allen, Frances I.; Kim, Eunpa; So, Hongyun; Park, Hee K.; Minor, Andrew M.; Grigoropoulos, Costas P.

    2015-01-01

    © 2015 American Chemical Society. This work is concerned with the kinetics of laser-induced reductive sintering of nonstoichiometric crystalline nickel oxide (NiO) nanoparticles (NPs) under ambient conditions. The mechanism of photophysical reductive sintering upon irradiation using a 514.5 nm continuous-wave (CW) laser on NiO NP thin films has been studied through modulating the laser power density and illumination time. Protons produced due to high-temperature decomposition of the solvent present in the NiO NP ink, oxygen vacancies in the NiO NPs, and electronic excitation in the NiO NPs by laser irradiation all affect the early stage of the reductive sintering process. Once NiO NPs are reduced by laser irradiation to Ni, they begin to coalesce, forming a conducting material. In situ optical and electrical measurements during the reductive sintering process take advantage of the distinct differences between the oxide and the metallic phases to monitor the transient evolution of the process. We observe four regimes: oxidation, reduction, sintering, and reoxidation. A characteristic time scale is assigned to each regime.

  8. Laser-Induced Reductive Sintering of Nickel Oxide Nanoparticles under Ambient Conditions

    KAUST Repository

    Paeng, Dongwoo

    2015-03-19

    © 2015 American Chemical Society. This work is concerned with the kinetics of laser-induced reductive sintering of nonstoichiometric crystalline nickel oxide (NiO) nanoparticles (NPs) under ambient conditions. The mechanism of photophysical reductive sintering upon irradiation using a 514.5 nm continuous-wave (CW) laser on NiO NP thin films has been studied through modulating the laser power density and illumination time. Protons produced due to high-temperature decomposition of the solvent present in the NiO NP ink, oxygen vacancies in the NiO NPs, and electronic excitation in the NiO NPs by laser irradiation all affect the early stage of the reductive sintering process. Once NiO NPs are reduced by laser irradiation to Ni, they begin to coalesce, forming a conducting material. In situ optical and electrical measurements during the reductive sintering process take advantage of the distinct differences between the oxide and the metallic phases to monitor the transient evolution of the process. We observe four regimes: oxidation, reduction, sintering, and reoxidation. A characteristic time scale is assigned to each regime.

  9. Gas sensing of ruthenium implanted tungsten oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Tesfamichael, T., E-mail: t.tesfamichael@qut.edu.au [Institute for Future Environments, School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology, 2 George Street, Brisbane, QLD 4000 (Australia); Ahsan, M. [William A. Cook Australia, 95 Brandl Street Eight Mile Plains, Brisbane, QLD 4113 (Australia); Notarianni, M. [Institute for Future Environments, School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology, 2 George Street, Brisbane, QLD 4000 (Australia); Groß, A.; Hagen, G.; Moos, R. [University of Bayreuth, Faculty of Engineering Science, Department of Functional Materials, Universitätsstr. 30, 95440 Bayreuth (Germany); Ionescu, M. [ANSTO, Institute for Environmental Research, Locked Bag 2001, Kirrawee DC, NSW 2232 (Australia); Bell, J. [Institute for Future Environments, School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology, 2 George Street, Brisbane, QLD 4000 (Australia)

    2014-05-02

    Different amounts of Ru were implanted into thermally evaporated WO{sub 3} thin films by ion implantation. The films were subsequently annealed at 600 °C for 2 h in air to remove defects generated during the ion implantation. The Ru concentrations of four samples have been quantified by Rutherford Backscattering Spectrometry as 0.8, 5.5, 9 and 11.5 at.%. The un-implanted WO{sub 3} films were highly porous but the porosity decreased significantly after ion implantation as observed by Transmission Electron Microscopy and Scanning Electron Microscopy. The thickness of the films also decreased with increasing Ru-ion dose, which is mainly due to densification of the porous films during ion implantation. From Raman Spectroscopy two peaks at 408 and 451 cm{sup −1} (in addition to the typical vibrational peaks of the monoclinic WO{sub 3} phase) associated with Ru were observed. Their intensity increased with increasing Ru concentration. X-ray Photoelectron Spectroscopy showed a metallic state of Ru with binding energy of Ru 3d{sub 5/2} at 280.1 eV. This peak position remained almost unchanged with increasing Ru concentration. The resistances of the Ru-implanted films were found to increase in the presence of NO{sub 2} and NO with higher sensor response to NO{sub 2}. The effect of Ru concentration on the sensing performance of the films was not explicitly observed due to reduced film thickness and porosity with increasing Ru concentration. However, the results indicate that the implantation of Ru into WO{sub 3} films with sufficient film porosity and film thickness can be beneficial for NO{sub 2} sensing at temperatures in the range of 250 °C to 350 °C. - Highlights: • Densification of WO{sub 3} thin films has occurred after Ru ion implantation. • Thickness and porosity of the films decrease with increasing Ru ion dose. • The amount of oxygen vacancies and defects increases with increasing Ru ion dose. • Ru has shown a crucial role in enhancing sensor response

  10. Structural and photoluminescent properties of a composite tantalum oxide and silicon nanocrystals embedded in a silicon oxide film

    Energy Technology Data Exchange (ETDEWEB)

    Díaz-Becerril, T., E-mail: tomas.diaz.be@gmail.com; Herrera, V.; Morales, C.; García-Salgado, G.; Rosendo, E.; Coyopol, A., E-mail: acoyopol@gmail.com; Galeazzi, R.; Romano, R.; Nieto-Caballero, F.G.; Sarmiento, J.

    2017-04-15

    Tantalum oxide crystals encrusted in a silicon oxide matrix were synthesized by using a hot filament chemical vapor deposition system (HFCVD). A solid source composed by a mixture in different percentages of Ta{sub 2}O{sub 5} and silicon (Si) powders were used as reactants. The films were grown at 800 °C and 1000 °C under hydrogen ambient. The deposited films were characterized by X-ray photoelectron spectroscopy (XPS), high-resolution transmission electron microscopy (HRTEM) and photoluminescence (PL) at room temperature. From the XPS results it was confirmed the formation of a mixture of Tantalum oxide, silicon oxide and Si nanoparticles (Ta{sub 2}O{sub 5-}SiO{sub 2}-Si(nc)) as seen from the Si (2p) and Ta (4f) lines corresponding to Si{sup +} and Ta{sup +} states respectively. Ta{sub 2}O{sub 5} and Si nanocrystals (Si-NCs) embedded in the silicon oxide films were observed on HRTEM images which corroborate the XPS results. Finally the emission properties of the films exhibited a broad band from 400 to 850 nm caused by the independent PL properties of tantalum oxide and Si-NCs that compose the film. The intensity of the emissions was observed to be dependent on both temperature of deposition and the ratio Ta{sub 2}O{sub 5}/Si, used as initial reactants. Results from this work might supply useful data for the development of future light emitter devices.

  11. Indium doped zinc oxide thin films obtained by electrodeposition

    International Nuclear Information System (INIS)

    Machado, G.; Guerra, D.N.; Leinen, D.; Ramos-Barrado, J.R.; Marotti, R.E.; Dalchiele, E.A.

    2005-01-01

    Indium doped ZnO thin films were obtained by co-electrodeposition (precursor and dopant) from aqueous solution. XRD analysis showed typical patterns of the hexagonal ZnO structure for both doped and undoped films. No diffraction peaks of any other structure such as In 2 O 3 or In(OH) 3 were found. The incorporation of In into the ZnO film was verified by both EDS and XPS measurements. The bandgap energy of the films varied from 3.27 eV to 3.42 eV, increasing with the In concentration in the solution. This dependence was stronger for the less cathodic potentials. The incorporation of In into the film occurs as both, an In donor state in the ZnO grains and as an amorphous In 2 O 3 at the grain boundaries

  12. Synthesis and characterization of hafnium oxide films for thermo and photoluminescence applications

    International Nuclear Information System (INIS)

    Guzman Mendoza, J.; Aguilar Frutis, M.A.; Flores, G. Alarcon; Garcia Hipolito, M.; Maciel Cerda, A.; Azorin Nieto, J.; Rivera Montalvo, T.; Falcony, C.

    2010-01-01

    Hafnium oxide (HfO 2 ) films were deposited by the ultrasonic spray pyrolysis process. The films were synthesized from hafnium chloride as raw material in deionized water as solvent and were deposited on corning glass substrates at temperatures from 300 to 600 deg. C. For substrate temperatures lower than 400 deg. C the deposited films were amorphous, while for substrate temperatures higher than 450 deg. C, the monoclinic phase of HfO 2 appeared. Scanning electron microscopy showed that the film's surface resulted rough with semi-spherical promontories. The films showed a chemical composition close to HfO 2 , with an Hf/O ratio of about 0.5. UV radiation was used in order to achieve the thermoluminescent characterization of the films; the 240 nm wavelength induced the best response. In addition, preliminary photoluminescence spectra, as a function of the deposition temperatures, are shown.

  13. Crystal orientation dependent thermoelectric properties of highly oriented aluminum-doped zinc oxide thin films

    KAUST Repository

    Abutaha, Anas I.

    2013-02-06

    We demonstrate that the thermoelectric properties of highly oriented Al-doped zinc oxide (AZO) thin films can be improved by controlling their crystal orientation. The crystal orientation of the AZO films was changed by changing the temperature of the laser deposition process on LaAlO3 (100) substrates. The change in surface termination of the LaAlO3 substrate with temperature induces a change in AZO film orientation. The anisotropic nature of electrical conductivity and Seebeck coefficient of the AZO films showed a favored thermoelectric performance in c-axis oriented films. These films gave the highest power factor of 0.26 W m−1 K−1 at 740 K.

  14. Structural-optical study of high-dielectric-constant oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Losurdo, M. [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, Department of Chemistry and INSTM Universita di bari, Via Orabona 4, 70126 Bari (Italy)]. E-mail: maria.losurdo@ba.imip.cnr.it; Giangregorio, M.M. [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, Department of Chemistry and INSTM Universita di bari, Via Orabona 4, 70126 Bari (Italy); Luchena, M. [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, Department of Chemistry and INSTM Universita di bari, Via Orabona 4, 70126 Bari (Italy); Capezzuto, P. [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, Department of Chemistry and INSTM Universita di bari, Via Orabona 4, 70126 Bari (Italy); Bruno, G. [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, Department of Chemistry and INSTM Universita di bari, Via Orabona 4, 70126 Bari (Italy); Toro, R.G. [Dipartimento di Scienze Chimiche, Universita di Catania, and INSTM-UdR Catania, Viale A. Doria 6, I-95125 Catania (Italy); Malandrino, G. [Dipartimento di Scienze Chimiche, Universita di Catania, and INSTM-UdR Catania, Viale A. Doria 6, I-95125 Catania (Italy); Fragala, I.L. [Dipartimento di Scienze Chimiche, Universita di Catania, and INSTM-UdR Catania, Viale A. Doria 6, I-95125 Catania (Italy); Nigro, R. Lo [Istituto di Microelettronica e Microsistemi, IMM-CNR, Stradale Primosole 50, I-95121 Catania (Italy)

    2006-10-31

    High-k polycrystalline Pr{sub 2}O{sub 3} and amorphous LaAlO{sub 3} oxide thin films deposited on Si(0 0 1) are studied. The microstructure is investigated using X-ray diffraction and scanning electron microscopy. Optical properties are determined in the 0.75-6.5 eV photon energy range using spectroscopic ellipsometry. The polycrystalline Pr{sub 2}O{sub 3} films have an optical gap of 3.86 eV and a dielectric constant of 16-26, which increases with film thickness. Similarly, very thin amorphous LaAlO{sub 3} films have the optical gap of 5.8 eV, and a dielectric constant below 14 which also increases with film thickness. The lower dielectric constant compared to crystalline material is an intrinsic characteristic of amorphous films.

  15. MATERIAL AND PROCESS DEVELOPMENT LEADING TO ECONOMICAL HIGH-PERFORMANCE THIN-FILM SOLID OXIDE FUEL CELLS. Final Technical Report (October 2000 - December 2003)

    International Nuclear Information System (INIS)

    Jie Guan; Nguyen Minh

    2003-01-01

    This report summarizes the results of the work conducted under the program: ''Material and Process Development Leading to Economical High-Performance Thin-Film Solid Oxide Fuel Cells'' under contract number DE-AC26-00NT40711. The program goal is to advance materials and processes that can be used to produce economical, high-performance solid oxide fuel cells (SOFC) capable of achieving extraordinary high power densities at reduced temperatures. Under this program, anode-supported thin electrolyte based on lanthanum gallate (LSMGF) has been developed using tape-calendering process. The fabrication parameters such as raw materials characteristics, tape formulations and sintering conditions have been evaluated. Dense anode supported LSGMF electrolytes with thickness range of 10-50 micron have been fabricated. High performance cathode based on Sr 0.5 Sm 0.5 CoO 3 (SSC) has been developed. Polarization of ∼0.23 ohm-cm 2 has been achieved at 600 C with Sr 0.5 Sm 0.5 CoO 3 cathode. The high-performance SSC cathode and thin gallate electrolyte have been integrated into single cells and cell performance has been characterized. Tested cells to date generally showed low performance because of low cell OCVs and material interactions between NiO in the anode and lanthanum gallate electrolyte

  16. Effect of negative bias on the composition and structure of the tungsten oxide thin films deposited by magnetron sputtering

    Science.gov (United States)

    Wang, Meihan; Lei, Hao; Wen, Jiaxing; Long, Haibo; Sawada, Yutaka; Hoshi, Yoichi; Uchida, Takayuki; Hou, Zhaoxia

    2015-12-01

    Tungsten oxide thin films were deposited at room temperature under different negative bias voltages (Vb, 0 to -500 V) by DC reactive magnetron sputtering, and then the as-deposited films were annealed at 500 °C in air atmosphere. The crystal structure, surface morphology, chemical composition and transmittance of the tungsten oxide thin films were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), X-ray photoelectron spectroscopy (XPS) and UV-vis spectrophotometer. The XRD analysis reveals that the tungsten oxide films deposited at different negative bias voltages present a partly crystallized amorphous structure. All the films transfer from amorphous to crystalline (monoclinic + hexagonal) after annealing 3 h at 500 °C. Furthermore, the crystallized tungsten oxide films show different preferred orientation. The morphology of the tungsten oxide films deposited at different negative bias voltages is consisted of fine nanoscale grains. The grains grow up and conjunct with each other after annealing. The tungsten oxide films deposited at higher negative bias voltages after annealing show non-uniform special morphology. Substoichiometric tungsten oxide films were formed as evidenced by XPS spectra of W4f and O1s. As a result, semi-transparent films were obtained in the visible range for all films deposited at different negative bias voltages.

  17. Native oxidation of ultra high purity Cu bulk and thin films

    International Nuclear Information System (INIS)

    Iijima, J.; Lim, J.-W.; Hong, S.-H.; Suzuki, S.; Mimura, K.; Isshiki, M.

    2006-01-01

    The effect of microstructure and purity on the native oxidation of Cu was studied by using angle-resolved X-ray photoelectron spectroscopy (AR-XPS) and spectroscopic ellipsometry (SE). A high quality copper film prepared by ion beam deposition under a substrate bias voltage of -50 V (IBD Cu film at V s = -50 V) showed an oxidation resistance as high as an ultra high purity copper (UHP Cu) bulk, whereas a Cu film deposited without substrate bias voltage (IBD Cu film at V s = 0 V) showed lower oxidation resistance. The growth of Cu 2 O layer on the UHP Cu bulk and both types of the films obeyed in principle a logarithmic rate law. However, the growth of oxide layer on the IBD Cu films at V s = 0 and -50 V deviated upward from the logarithmic rate law after the exposure time of 320 and 800 h, respectively. The deviation from the logarithmic law is due to the formation of CuO on the Cu 2 O layer after a critical time

  18. Effects of sputtering power on properties of copper oxides thin films deposited on glass substrates

    Energy Technology Data Exchange (ETDEWEB)

    Ooi, P. K.; Ng, S. S.; Abdullah, M. J. [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia)

    2015-04-24

    Copper oxides are deposited by radio frequency sputtering using copper target in the mixture of argon and oxygen gasses. The structural and optical properties of the copper oxides deposited at different sputtering powers have been investigated. All the films are single phase polycrystalline. At low RF power (100 W), the film is monoclinic structure of cupric oxide (CuO). Meanwhile, the films are cubic structure of cuprous oxide (Cu2O) at higher RF power. Field emission scanning electron microscopy images show the films have different morphologies with small grain size and consist of a lot of voids. The analysis of energy dispersive X-ray spectroscopy shows that the ratio of Cu to O is increased as the RF power increased. From the ultraviolet–visible spectroscopy, the films have a broad absorption edge in the range of 300–500 nm. The band gap of the films grown at RF power of 100 W, and 120 W and above, were 1.18 eV and 2.16 eV, respectively.

  19. Influences of the main anodic electroplating parameters on cerium oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Yang; Yang, Yumeng; Du, Xiaoqing; Chen, Yu [Department of Chemistry, Zhejiang University, Hangzhou 310027, Zhejiang (China); Zhang, Zhao, E-mail: eaglezzy@zjuem.zju.edu.cn [Department of Chemistry, Zhejiang University, Hangzhou 310027, Zhejiang (China); Zhang, Jianqing [Department of Chemistry, Zhejiang University, Hangzhou 310027, Zhejiang (China); State Key Laboratory for Corrosion and Protection of Metals, Shenyang 110016 (China)

    2014-06-01

    Cerium oxide thin films were fabricated onto 316 L stainless steel via a potentiostatically anodic electrodeposition approach in the solutions containing cerium(III) nitrate (0.05 M), ammonia acetate (0.1 M) and ethanol (10% V/V). The electrochemical behaviors and deposition parameters (applied potential, bath temperature, dissolving O{sub 2} and bath pH) have been investigated. Results show that, the electrochemical oxidation of Ce{sup 3+} goes through one electrochemical step, which is under charge transfer control. The optimum applied potential for film deposition is 0.8 V. Bath temperature plays a significant effect on the deposition rate, composition (different colors of the film) and surface morphology of the deposits. Due to the hydrolysis of Ce{sup 3+}, cerous hydroxide is facility to form when the bath temperature is higher than 60 °C. The electroplating bath pH is another key role for the anodic deposition of cerium oxide thin films, and the best bath pH is around 6.20. N{sub 2} or O{sub 2} purged into the bath will result in film porosities and O{sub 2} favors cerium oxide particles and film generation.

  20. Thermal transport properties of polycrystalline tin-doped indium oxide films

    International Nuclear Information System (INIS)

    Ashida, Toru; Miyamura, Amica; Oka, Nobuto; Sato, Yasushi; Shigesato, Yuzo; Yagi, Takashi; Taketoshi, Naoyuki; Baba, Tetsuya

    2009-01-01

    Thermal diffusivity of polycrystalline tin-doped indium oxide (ITO) films with a thickness of 200 nm has been characterized quantitatively by subnanosecond laser pulse irradiation and thermoreflectance measurement. ITO films sandwiched by molybdenum (Mo) fil