WorldWideScience

Sample records for nichrome resistors final

  1. Ethanol oxidation on a nichrome-supported spherical platinum microparticle electrocatalyst prepared by electrodeposition

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Zhen-Hui; Li, Jing; Dong, Xiaoya; Wang, Dong; Chen, Tiwei; Qiao, Haiyan; Huang, Aiping [College of Chemistry and Environmental Science, Henan Key Laboratory for Environmental Pollution Control, Henan Normal University, Jianshe Road, Xinxiang 453007 (China)

    2008-11-15

    A novel electrode was rapidly prepared by depositing microparticle platinum onto a nichrome substrate in dilute chloroplatinic acid solution by cyclic voltammetry. The SEM results revealed that the deposits were composed of spherical Pt microparticles. Cyclic voltammetry and chronoamperometry were used for the characterization of the electrodes. Results of the electrochemical measurements showed that the spherical Pt microparticle electrodes retained the properties of metal platinum, increased the catalytic activity and promoted the electrocatalytic oxidation of ethanol. Moreover, the deposited Pt microparticles improved the electrochemical properties of the support material and reduced the dosage of noble metal platinum remarkably. The cost could be reduced dramatically by decreasing the contents of platinum. The spherical Pt microparticles deposited on the nichrome supports are likely a potential electrocatalyst for ethanol electrooxidation. (author)

  2. Investigation of the interaction between the components of a Nichrome-tungsten composite

    Energy Technology Data Exchange (ETDEWEB)

    Prokopov, I.P.; Logvinova, T.N.

    1980-01-01

    Experimental results are presented on the effect of Nichrome melting on tungsten in the case of different rates of solidification of the composite. Consideration is given to the effect of the volume fraction of reinforced materials on the size of the transition zone between the fibers and the die and on the microhardness distribution in the composite system.

  3. Resistor holder

    Science.gov (United States)

    Broadhurst, John H.

    1989-01-01

    A resistor device for use with electrostatic particle accelerators includes a resistor element positioned within a tubular housing having a fixed end cap at one end thereof and a movable end cap at the other end thereof. The tubular housing, fixed end cap, and movable end cap serve as an electromagnetic field for the resistor element. Conductive disks engage opposite ends of the resistor element and concentrically position the resistor element within the tubular housing. Helical springs engage the conductive disks and the end caps to yieldably support the movable end caps and resistor element for yieldable axial movement relative to the tubular housing. An annular conducting ring is secured to the tubular housing and is spaced radially from the movable end cap and cooperates with the latter to define an annular spark gap.

  4. A resistor interpretation of general anisotropic cardiac tissue.

    Science.gov (United States)

    Shao, Hai; Sampson, Kevin J; Pormann, John B; Rose, Donald J; Henriquez, Craig S

    2004-02-01

    This paper describes a spatial discretization scheme for partial differential equation systems that contain anisotropic diffusion. The discretization method uses unstructured finite volumes, or the boxes, that are formed as a secondary geometric structure from an underlying triangular mesh. We show how the discretization can be interpreted as a resistive circuit network, where each resistor is assigned at each edge of the triangular element. The resistor is computed as an anisotropy dependent geometric quantity of the local mesh structure. Finally, we show that under certain conditions, the discretization gives rise to negative resistors that can produce non-physical hyperpolarizations near depolarizing stimuli. We discuss how the proper choice of triangulation (anisotropic Delaunay triangulation) can ensure monotonicity (i.e. all resistors are positive).

  5. N-Bit Binary Resistor

    Science.gov (United States)

    Tcheng, Ping

    1989-01-01

    Binary resistors in series tailored to precise value of resistance. Desired value of resistance obtained by cutting appropriate traces across resistors. Multibit, binary-based, adjustable resistor with high resolution used in many applications where precise resistance required.

  6. Karakteristik Tcr Dan Vcr Resistor Pasta Resistor Pada Substrat Alumina Dengan Teknologi Film Tebal

    OpenAIRE

    Raden Arief Setyawan, ST., MT., Rhezananta Arya H., Ir. M. Julius St., MS

    2014-01-01

    Resistor merupakan komponen yang sangat berperan dalam rangkaian film tebal. Resistor berteknologi film tebal mempunyai karakteristik yang terdiri dari TCR (Temperature Coefficient of Resistance) dan VCR (Voltage Coefficient of Resistance). Dari alasan di atas maka perlu untuk mengetahui bagaimana pembuatan resistor film tebal dan mengetahui karakteristiknya.Penelitian ini menggunakan proses screen printing dalam pembuatan resistor yang kemudian melalui proses pengendapan (15 menit), drying (...

  7. Electrochemical characterization of liquid resistors

    International Nuclear Information System (INIS)

    Wilson, J.M.; Whiteley, R.V.

    1983-01-01

    During the first two years of operation of Sandia's Particle Beam Fusion Accelerator (PBFA I) the reliability of the CuSO 4 solution resistors in the Marx Generator Energy Storage System has been unsatisfactory. Resistor failure, which is characterized by a large increase in resistance, has been attributed to materials, production techniques, and operating parameters. The problems associated with materials and production techniques have been identified and solutions are proposed. Non-ideal operating parameters are shown to cause polarization of the cathode in the resistor. This initiates electrochemical reactions in the resistor. These reactions often lead to resistance changes and to eventual resistor failure

  8. Time-adjusted variable resistor

    Science.gov (United States)

    Heyser, R. C.

    1972-01-01

    Timing mechanism was developed effecting extremely precisioned highly resistant fixed resistor. Switches shunt all or portion of resistor; effective resistance is varied over time interval by adjusting switch closure rate.

  9. Surface scattering mechanisms of tantalum nitride thin film resistor.

    Science.gov (United States)

    Chen, Huey-Ru; Chen, Ying-Chung; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Chu, Tian-Jian; Shih, Chih-Cheng; Chuang, Nai-Chuan; Wang, Kao-Yuan

    2014-01-01

    In this letter, we utilize an electrical analysis method to develop a TaN thin film resistor with a stricter spec and near-zero temperature coefficient of resistance (TCR) for car-used electronic applications. Simultaneously, we also propose a physical mechanism mode to explain the origin of near-zero TCR for the TaN thin film resistor (TFR). Through current fitting, the carrier conduction mechanism of the TaN TFR changes from hopping to surface scattering and finally to ohmic conduction for different TaN TFRs with different TaN microstructures. Experimental data of current-voltage measurement under successive increasing temperature confirm the conduction mechanism transition. A model of TaN grain boundary isolation ability is eventually proposed to influence the carrier transport in the TaN thin film resistor, which causes different current conduction mechanisms.

  10. Vamistor resistor investigation

    Science.gov (United States)

    1973-01-01

    Results are presented of the failure investigation conducted on resistors produced by the Vamistor Divison, Wagner Electric Corporation. This failure investigation included; failure analyses, chemical and metallurgical analyses, failure mechanism studies, seal leak analyses, and nondestructive stress tests. The data, information, conclusions, and recommendation can be helpful in assessing current usage of these resistors.

  11. Discrete/PWM Ballast-Resistor Controller

    Science.gov (United States)

    King, Roger J.

    1994-01-01

    Circuit offers low switching loss and automatic compensation for failure of ballast resistor. Discrete/PWM ballast-resistor controller improved shunt voltage-regulator circuit designed to supply power from high-resistance source to low-impedance bus. Provides both coarse discrete voltage levels (by switching of ballast resistors) and continuous fine control of voltage via pulse-width modulation.

  12. 30 CFR 77.801 - Grounding resistors.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Grounding resistors. 77.801 Section 77.801 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR COAL MINE SAFETY AND HEALTH...-Voltage Distribution § 77.801 Grounding resistors. The grounding resistor, where required, shall be of the...

  13. High voltage load resistor array

    Science.gov (United States)

    Lehmann, Monty Ray [Smithfield, VA

    2005-01-18

    A high voltage resistor comprising an array of a plurality of parallel electrically connected resistor elements each containing a resistive solution, attached at each end thereof to an end plate, and about the circumference of each of the end plates, a corona reduction ring. Each of the resistor elements comprises an insulating tube having an electrode inserted into each end thereof and held in position by one or more hose clamps about the outer periphery of the insulating tube. According to a preferred embodiment, the electrode is fabricated from stainless steel and has a mushroom shape at one end, that inserted into the tube, and a flat end for engagement with the end plates that provides connection of the resistor array and with a load.

  14. Current limiting capability of diffused resistors

    International Nuclear Information System (INIS)

    Shedd, W.; Cappelli, J.

    1979-01-01

    An experimental evaluation of the current limiting capability of dielectrically isolated diffused resistors at transient ionizing dose rates up to 6*10 12 rads(Si)/sec is presented. Existing theoretical predictions of the transient response of diffused resistors are summarized and compared to the experimentally measured values. The test resistors used allow the effects of sheet resistance and geometry on the transient response to be determined. The experimental results show that typical dielectrically isolated diffused resistors maintain adequate current limiting capability for use in radiation hardened integrated circuits

  15. Dual design resistor for high voltage conditioning and transmission lines

    Science.gov (United States)

    Siggins, Timothy Lynn [Newport News, VA; Murray, Charles W [Hayes, VA; Walker, Richard L [Norfolk, VA

    2007-01-23

    A dual resistor for eliminating the requirement for two different value resistors. The dual resistor includes a conditioning resistor at a high resistance value and a run resistor at a low resistance value. The run resistor can travel inside the conditioning resistor. The run resistor is capable of being advanced by a drive assembly until an electrical path is completed through the run resistor thereby shorting out the conditioning resistor and allowing the lower resistance run resistor to take over as the current carrier.

  16. Improved switch-resistor packaging

    Science.gov (United States)

    Redmerski, R. E.

    1980-01-01

    Packaging approach makes resistors more accessible and easily identified with specific switches. Failures are repaired more quickly because of improved accessibility. Typical board includes one resistor that acts as circuit breaker, and others are positioned so that their values can be easily measured when switch is operated. Approach saves weight by using less wire and saves valuable panel space.

  17. Calculable resistors of coaxial design

    International Nuclear Information System (INIS)

    Kucera, J; Vollmer, E; Schurr, J; Bohacek, J

    2009-01-01

    1000 Ω and 1290.64 Ω coaxial resistors with calculable frequency dependence have been realized at PTB to be used in quantum Hall effect-based impedance measurements. In contradistinction to common designs of coaxial resistors, the design described in this paper makes it possible to remove the resistive element from the shield and to handle it without cutting the outer cylindrical shield of the resistor. Emphasis has been given to manufacturing technology and suppressing unwanted sources of frequency dependence. The adjustment accuracy is better than 10 µΩ Ω −1

  18. On load resistor noise in preamplifiers for semiconductor detectors

    International Nuclear Information System (INIS)

    Baldin, S.A.; Bajramashvili, I.A.; Gubin, S.F.

    1975-01-01

    The main causes resulting in the deterioration of energy resolution in preamplifiers for semiconductor detectors (scd) with a resistor in the feedback circuit are discussed. A comparison of noise characteristics has been carried out of a number of high-resistance commercial and experimental resistors. The resistor noise dependence on the nature of drop of the resistor impedance active part in the region up to 100 Kc, as well as on the resistor spurious capacitance in shown

  19. Studying the noise parameters of thin-film silicon resistors

    International Nuclear Information System (INIS)

    Belogurov, S.V.; Gostilo, V.V.; Yurov, A.S.

    1986-01-01

    The results of studies on spectral density and energy noise equivalent of thin-film resistors on the base of amorphous silicon and KIM and KVM commercial high-ohmic resistors are presented. Dependence of the active part of impedance on frequency is shown to be the main source of redundant noise in resistors. Dependence of spectral density of noise voltage of current noises of silicon resistors on applied voltage is described by the formula S T =B V 2 /f 1.6 with the values B=(1.4-1.7)x10 -12 Hz 0.6 . As to noise parameters the silicon resistor is superior to commercial resistors

  20. Critical exponents for diluted resistor networks.

    Science.gov (United States)

    Stenull, O; Janssen, H K; Oerding, K

    1999-05-01

    An approach by Stephen [Phys. Rev. B 17, 4444 (1978)] is used to investigate the critical properties of randomly diluted resistor networks near the percolation threshold by means of renormalized field theory. We reformulate an existing field theory by Harris and Lubensky [Phys. Rev. B 35, 6964 (1987)]. By a decomposition of the principal Feynman diagrams, we obtain diagrams which again can be interpreted as resistor networks. This interpretation provides for an alternative way of evaluating the Feynman diagrams for random resistor networks. We calculate the resistance crossover exponent phi up to second order in epsilon=6-d, where d is the spatial dimension. Our result phi=1+epsilon/42+4epsilon(2)/3087 verifies a previous calculation by Lubensky and Wang, which itself was based on the Potts-model formulation of the random resistor network.

  1. Suppressing Thermal Energy Drift In The LLNL Flash X-Ray Accelerator Using Linear Disk Resistor Stacks

    International Nuclear Information System (INIS)

    Kreitzer, B.R.; Houck, T.L.; Luchterhand, O.C.

    2011-01-01

    offering the desired low temperature coefficient of resistance compared to sodium thiosulfate. The characterization experiments and comparison with the sodium thiosulfate liquid resistors will be fully discussed and the final design described.

  2. Suppressing Thermal Energy Drift In The LLNL Flash X-Ray Accelerator Using Linear Disk Resistor Stacks

    Energy Technology Data Exchange (ETDEWEB)

    Kreitzer, B R; Houck, T L; Luchterhand, O C

    2011-07-19

    is minimized while still offering the desired low temperature coefficient of resistance compared to sodium thiosulfate. The characterization experiments and comparison with the sodium thiosulfate liquid resistors will be fully discussed and the final design described.

  3. 30 CFR 77.510 - Resistors; location and guarding.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Resistors; location and guarding. 77.510 Section 77.510 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR COAL MINE... COAL MINES Electrical Equipment-General § 77.510 Resistors; location and guarding. Resistors, heaters...

  4. Slew Rate Induced Distortion in Switched-Resistor Integrators

    NARCIS (Netherlands)

    Jiraseree-Amornkun, A.; Jiraseree-amornkun, A.; Worapishet, A.; Klumperink, Eric A.M.; Nauta, Bram; Surakampontorn, W.

    2006-01-01

    Abstract—OPAMP-RC integrators built with linear resistors and capacitors can achieve very high linearity. By means of a switched resistor, tuning of the RC time-constant is possible via the duty-cycle of the clock controlling the switched resistor. This paper analyzes the effect of OPAMP slew rate

  5. Multiple High Voltage Pulse Stressing of Polymer Thick Film Resistors

    Directory of Open Access Journals (Sweden)

    Busi Rambabu

    2014-01-01

    Full Text Available The purpose of this paper is to study high voltage interactions in polymer thick film resistors, namely, polyvinyl chloride- (PVC- graphite thick film resistors, and their applications in universal trimming of these resistors. High voltages in the form of impulses for various pulse durations and with different amplitudes have been applied to polymer thick film resistors and we observed the variation of resistance of these resistors with high voltages. It has been found that the resistance of polymer thick film resistors decreases in the case of higher resistivity materials and the resistance of polymer thick film resistor increases in the case of lower resistivity materials when high voltage impulses are applied to them. It has been also found that multiple high voltage pulse (MHVP stressing can be used to trim the polymer thick film resistors either upwards or downwards.

  6. Noise characteristics of resistors buried in low-temperature co-fired ceramics

    International Nuclear Information System (INIS)

    Kolek, A; Ptak, P; Dziedzic, A

    2003-01-01

    The comparison of noise properties of conventional thick film resistors prepared on alumina substrates and resistors embedded in low-temperature co-fired ceramics (LTCCs) is presented. Both types of resistors were prepared from commercially available resistive inks. Noise measurements of LTCC resistors below 1 kHz show Gaussian 1/f noise. This is concluded from the calculations of the second spectra as well as from studying the volume dependence of noise intensity. It has occurred that noise index of LTCC resistors on average is not worse than that of conventional resistors. A detailed study of co-fired surface resistors and co-fired buried resistors show that burying a resistor within LTCC substrate usually leads to (significant) enhancement of resistance but not of noise intensity. We interpret this behaviour as another argument in favour of tunnelling as the dominant conduction mechanism in LTCC resistors

  7. Solid-state resistor for pulsed power machines

    Science.gov (United States)

    Stoltzfus, Brian; Savage, Mark E.; Hutsel, Brian Thomas; Fowler, William E.; MacRunnels, Keven Alan; Justus, David; Stygar, William A.

    2016-12-06

    A flexible solid-state resistor comprises a string of ceramic resistors that can be used to charge the capacitors of a linear transformer driver (LTD) used in a pulsed power machine. The solid-state resistor is able to absorb the energy of a switch prefire, thereby limiting LTD cavity damage, yet has a sufficiently low RC charge time to allow the capacitor to be recharged without disrupting the operation of the pulsed power machine.

  8. For current viewing resistor loads

    Science.gov (United States)

    Lyons, Gregory R [Tijeras, NM; Hass, Jay B [Lee's Summit, MO

    2011-04-19

    The invention comprises a terminal unit for a flat cable comprising a BNC-PCB connector having a pin for electrically contacting one or more conducting elements of a flat cable, and a current viewing resistor having an opening through which the pin extends and having a resistor face that abuts a connector face of the BNC-PCB connector, wherein the device is a terminal unit for the flat cable.

  9. Measurements of fuse and resistor characteristics for multi-megajoule capacitor bank application

    International Nuclear Information System (INIS)

    McDonald, K.F.; Smith, T.; Golden, J.; Conley, B.

    1986-01-01

    Experimental tests have been conducted on commercially available fuses and resistors under fast high voltage pulsed (10 μsec) conditions to determine their ability to protect capacitor bank components during faults. NRL's Modified Betatron Accelerator uses two multi-megajoule capacitor banks to power the toroidal and betatron magnetic field coils. The expensive high energy density capacitors in these banks must be protected from excessive peak current, voltage reversal, or charging beyond their electrical ratings in the occurrence of a fault. Adequate protection can be obtained with fuses and resistors in series with each parallel connected capacitor. The fuses must open reliably and hold off high voltage D.C. (10 - 20 kV), and the resistors must conduct high current and di/dt without failing from energy deposition or magnetic forces. The performance of the commercial fuses is well documented at low AC frequencies and currents (60 Hz/100 A) but data was not previously available for the fast high current pulsed conditions that prevail under actual fault conditions. A 20 kV 200 kJ, low inductance capacitor bank and ignitron switch were used to conduct the experiments. Peak currents in the fuses were approximately 170 kA at t - 6.5 μs. The final fuse hold-off voltage exceeded 8 kV. Currents in the resistors ranged from - 20 - 40 kA per resistor. The experimental results have been compared to the manufacturers data from minimum melt and maximum let-through and to exploding bridge wire computer models

  10. Irreversible entropy model for damage diagnosis in resistors

    Energy Technology Data Exchange (ETDEWEB)

    Cuadras, Angel, E-mail: angel.cuadras@upc.edu; Crisóstomo, Javier; Ovejas, Victoria J.; Quilez, Marcos [Instrumentation, Sensor and Interfaces Group, Electronic Engineering Department, Escola d' Enginyeria de Telecomunicació i Aeronàutica de Castelldefels EETAC, Universitat Politècnica de Catalunya, Barcelona Tech (UPC), Castelldefels-Barcelona (Spain)

    2015-10-28

    We propose a method to characterize electrical resistor damage based on entropy measurements. Irreversible entropy and the rate at which it is generated are more convenient parameters than resistance for describing damage because they are essentially positive in virtue of the second law of thermodynamics, whereas resistance may increase or decrease depending on the degradation mechanism. Commercial resistors were tested in order to characterize the damage induced by power surges. Resistors were biased with constant and pulsed voltage signals, leading to power dissipation in the range of 4–8 W, which is well above the 0.25 W nominal power to initiate failure. Entropy was inferred from the added power and temperature evolution. A model is proposed to understand the relationship among resistance, entropy, and damage. The power surge dissipates into heat (Joule effect) and damages the resistor. The results show a correlation between entropy generation rate and resistor failure. We conclude that damage can be conveniently assessed from irreversible entropy generation. Our results for resistors can be easily extrapolated to other systems or machines that can be modeled based on their resistance.

  11. Irreversible entropy model for damage diagnosis in resistors

    International Nuclear Information System (INIS)

    Cuadras, Angel; Crisóstomo, Javier; Ovejas, Victoria J.; Quilez, Marcos

    2015-01-01

    We propose a method to characterize electrical resistor damage based on entropy measurements. Irreversible entropy and the rate at which it is generated are more convenient parameters than resistance for describing damage because they are essentially positive in virtue of the second law of thermodynamics, whereas resistance may increase or decrease depending on the degradation mechanism. Commercial resistors were tested in order to characterize the damage induced by power surges. Resistors were biased with constant and pulsed voltage signals, leading to power dissipation in the range of 4–8 W, which is well above the 0.25 W nominal power to initiate failure. Entropy was inferred from the added power and temperature evolution. A model is proposed to understand the relationship among resistance, entropy, and damage. The power surge dissipates into heat (Joule effect) and damages the resistor. The results show a correlation between entropy generation rate and resistor failure. We conclude that damage can be conveniently assessed from irreversible entropy generation. Our results for resistors can be easily extrapolated to other systems or machines that can be modeled based on their resistance

  12. Rancang Bangun Aplikasi Pendeteksi Tipe Dan Nilai Resistor Berbasis Android

    Directory of Open Access Journals (Sweden)

    I Putu Pratama Andika

    2015-11-01

    Full Text Available Android can be identified as the phone with the ability a high degree resembling computer, by making use of technological progress, an error in the determination of type and value of obstruction from resistors led a series of electronics result of the damage can be avoided, this is because of a resistor having the function of as parapet an electric current or as voltage divider of the series, detection so that the application of type and value of resistor able to contribute to the introduction of a resistor, by using processing tecnology digital image that is a method of hsv ( hue saturation value . Hsv useful as a limit of a color become a reference of the rings of color resistor, by applying this method application can do the introduction of against resistors diinputkan, to then give them the information relating to a type and value of a resistor. It has the percentage research success in the introduction of the value and type resistor by 57 %, to misidentified 30 % and not being recognized of 13 % .

  13. Thermal aspects of resistors embedded in dielectrics

    International Nuclear Information System (INIS)

    Caprari, R.S.

    1995-10-01

    This note presents a formula for estimating the temperature of a distributed resistor or resistor chain that is immersed in a dielectric medium, which in turn is surrounded by a heat reservoir. An example computation from an actual instrument in included. 6 refs

  14. Application to printed resistors

    International Nuclear Information System (INIS)

    Hachiyanagi, Yoshimi; Uraki, Hisatsugu; Sawamura, Masashi

    1989-01-01

    Most of printed circuit boards are made at present by etching copper foils which are laminated on insulating composite boards of paper/phenol resin or glass nonwoven fabric/epoxy rein. This is called subtractive process, and since this is a wet process, the problem of coping with the pollution due to etching solution, plating solution and others is involved. As the method of solving this problem, attention has been paid to the dry process which forms conductor patterns by screen printing using electro-conductive paste. For such resin substrates, generally polymer thick films (PTF) using thermosetting resin as the binder are used. Also the research on the formation of resistors, condensers and other parts by printing using the technology of cermet thick films (CTF) and PTF is active, and it is partially put in practical use. The problems are the deformation and deterioration of substrates, therefore, as the countermeasures, electron beam hardening type PTF has been studied, and various pastes have been developed. In this paper, electron beam hardening type printed resistors are reported. The features, resistance paste, and a number of the experiments on printed resistors are described. (K.I.)

  15. Evaluation of Pressure Generated by Resistors From Different Positive Expiratory Pressure Devices.

    Science.gov (United States)

    Fagevik Olsén, Monika; Carlsson, Maria; Olsén, Erik; Westerdahl, Elisabeth

    2015-10-01

    Breathing exercises with positive expiratory pressure (PEP) are used to improve pulmonary function and airway clearance. Different PEP devices are available, but there have been no studies that describe the pressure generated by different resistors. The purpose of this study was to compare pressures generated from the proprietary resistor components of 4 commercial flow-dependent PEP valves with all other parameters kept constant. Resistors from 4 flow-regulated PEP devices (Pep/Rmt system, Wellspect HealthCare; Pipe P breathing exerciser, Koo Medical Equipment; Mini-PEP, Philips Respironics [including resistors by Rüsch]; and 15-mm endo-adapter, VBM Medizintechnik) were tested randomly by a blinded tester at constant flows of 10 and 18 L/min from an external gas system. All resistors were tested 3 times. Resistors with a similar diameter produced statistically significant different pressures at the same flow. The differences were smaller when the flow was 10 L/min compared with 18 L/min. The differences were also smaller when the diameter of the resistor was increased. The pressures produced by the 4 resistors of the same size were all significantly different when measuring 1.5- and 2.0-mm resistors at a flow of 10 L/min and 2.0-mm resistors at a flow of 18 L/min (P < .001). There were no significant differences between any of the resistors when testing sizes of 4.5 and 5.0 mm at either flow. The Mini-PEP and adapter resistors gave the highest pressures. Pressures generated by the different proprietary resistor components of 4 commercial PEP devices were not comparable, even though the diameter of the resistors is reported to be the same. The pressures generated were significantly different, particularly when using small-diameter resistors at a high flow. Therefore, the resistors may not be interchangeable. This is important information for clinicians, particularly when considering PEP for patients who do not tolerate higher pressures. Copyright © 2015 by

  16. Stochastic Resonance Induced by Dichotomous Resistor in an Electric Circuit

    International Nuclear Information System (INIS)

    Li Jinghui; Han Yinxia

    2007-01-01

    An electric circuit with dichotomous resistor is investigated. It is shown that the amplitude of the average electric current washing the resistor represents the phenomenon of stochastic resonance, which is the response as a function of the correlation time of the dichotomous resistor.

  17. Process for forming synapses in neural networks and resistor therefor

    Science.gov (United States)

    Fu, Chi Y.

    1996-01-01

    Customizable neural network in which one or more resistors form each synapse. All the resistors in the synaptic array are identical, thus simplifying the processing issues. Highly doped, amorphous silicon is used as the resistor material, to create extremely high resistances occupying very small spaces. Connected in series with each resistor in the array is at least one severable conductor whose uppermost layer has a lower reflectivity of laser energy than typical metal conductors at a desired laser wavelength.

  18. Reliability growth of thin film resistors contact

    Directory of Open Access Journals (Sweden)

    Lugin A. N.

    2010-10-01

    Full Text Available Necessity of resistive layer growth under the contact and in the contact zone of resistive element is shown in order to reduce peak values of current flow and power dissipation in the contact of thin film resistor, thereby to increase the resistor stability to parametric and catastrophic failures.

  19. 30 CFR 57.12023 - Guarding electrical connections and resistor grids.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Guarding electrical connections and resistor... NONMETAL MINES Electricity Surface and Underground § 57.12023 Guarding electrical connections and resistor grids. Electrical connections and resistor grids that are difficult or impractical to insulate shall be...

  20. 30 CFR 56.12023 - Guarding electrical connections and resistor grids.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Guarding electrical connections and resistor... MINES Electricity § 56.12023 Guarding electrical connections and resistor grids. Electrical connections and resistor grids that are difficult or impractical to insulate shall be guarded, unless protection...

  1. Adjustable thermal resistor by reversibly folding a graphene sheet.

    Science.gov (United States)

    Song, Qichen; An, Meng; Chen, Xiandong; Peng, Zhan; Zang, Jianfeng; Yang, Nuo

    2016-08-11

    Phononic (thermal) devices such as thermal diodes, thermal transistors, thermal logic gates, and thermal memories have been studied intensively. However, tunable thermal resistors have not been demonstrated yet. Here, we propose an instantaneously adjustable thermal resistor based on folded graphene. Through theoretical analysis and molecular dynamics simulations, we study the phonon-folding scattering effect and the dependence of thermal resistivity on the length between two folds and the overall length. Furthermore, we discuss the possibility of realizing instantaneously adjustable thermal resistors in experiment. Our studies bring new insights into designing thermal resistors and understanding the thermal modulation of 2D materials by adjusting basic structure parameters.

  2. 30 CFR 77.801-1 - Grounding resistors; continuous current rating.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Grounding resistors; continuous current rating... OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.801-1 Grounding resistors; continuous current rating. The ground fault current rating of grounding resistors shall meet the “extended...

  3. 30 CFR 77.901-1 - Grounding resistor; continuous current rating.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Grounding resistor; continuous current rating. 77.901-1 Section 77.901-1 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF... resistor; continuous current rating. The ground fault current rating of grounding resistors shall meet the...

  4. Resistor cooling in a vacuum

    International Nuclear Information System (INIS)

    Crittenden, R.; Krider, J.

    1987-01-01

    This note describes thermal measurements which were done on a resistor operating both in air at one atmosphere pressure and in a vacuum of a few milliTorr. The motivation for this measurement was our interest in operating a BGO crystal-photomultiplier tube-base assembly in a vacuum, as a synchrotron radiation detector to tag electrons in the MT beam. We wished to determine what fraction of the total resistor power was dissipated by convection in air, in order to know whether there would be excessive heating of the detector assembly in a vacuum. 3 figs

  5. Babylonian Resistor Networks

    Science.gov (United States)

    Mungan, Carl E.; Lipscombe, Trevor C.

    2012-01-01

    The ancient Babylonians had an iterative technique for numerically approximating the values of square roots. Their method can be physically implemented using series and parallel resistor networks. A recursive formula for the equivalent resistance R[subscript eq] is developed and converted into a nonrecursive solution for circuits using…

  6. NuMI proton kicker extraction magnet termination resistor system

    Energy Technology Data Exchange (ETDEWEB)

    Reeves, S.R.; Jensen, C.C.; /Fermilab

    2005-05-01

    The temperature stability of the kicker magnet termination resistor assembly directly affects the field flatness and amplitude stability. Comprehensive thermal enhancements were made to the existing Main Injector resistor assembly design to satisfy NuMI performance specifications. Additionally, a fluid-processing system utilizing Fluorinert{reg_sign} FC-77 high-voltage dielectric was built to precisely control the setpoint temperature of the resistor assembly from 70 to 120F, required to maintain constant resistance during changing operational modes. The Fluorinert{reg_sign} must be continually processed to remove hazardous breakdown products caused by radiation exposure to prevent chemical attack of system components. Design details of the termination resistor assembly and Fluorinert{reg_sign} processing system are described. Early performance results will be presented.

  7. Temperature-controlled resistor

    Science.gov (United States)

    Perkins, T. G.

    1969-01-01

    Electrical resistance of a carbon-pile resistor is controlled by the compression or relaxation of a pile of carbon disks by a thermally actuated bimetallic spring. The concept is advantageous in that it is direct-acting, can cover a wide range of controllable characteristics, and can handle considerable power directly.

  8. Voltage-Controlled Floating Resistor Using DDCC

    Directory of Open Access Journals (Sweden)

    M. Kumngern

    2011-04-01

    Full Text Available This paper presents a new simple configuration to realize the voltage-controlled floating resistor, which is suitable for integrated circuit implementation. The proposed resistor is composed of three main components: MOS transistor operating in the non-saturation region, DDCC, and MOS voltage divider. The MOS transistor operating in the non-saturation region is used to configure a floating linear resistor. The DDCC and the MOS transistor voltage divider are used for canceling the nonlinear component term of MOS transistor in the non-saturation region to obtain a linear current/voltage relationship. The DDCC is employed to provide a simple summer of the circuit. This circuit offers an ease for realizing the voltage divider circuit and the temperature effect that includes in term of threshold voltage can be compensated. The proposed configuration employs only 16 MOS transistors. The performances of the proposed circuit are simulated with PSPICE to confirm the presented theory.

  9. Investigation of OSL signal of resistors from mobile phones for accidental dosimetry

    International Nuclear Information System (INIS)

    Mrozik, A.; Marczewska, B.; Bilski, P.; Gieszczyk, W.

    2014-01-01

    Resistors from mobile phones, usually located near the human body, are considered as individual dosimeters of ionizing radiation in emergency situations. The resistors contain Al 2 O 3 , which is optically stimulated luminescence (OSL) material sensitive to ionizing radiation. This work is focused on determination of dose homogeneity within mobile phones which was carried out by OSL measurements of resistors placed in different parts inside the mobile phone. Separate, commercially available resistors, similar in the shape and size to the resistors from circuit board of the studied mobile phone, were situated in different locations inside it. The irradiations were performed in uniform 60 Co and 137 Cs radiation fields, with the mobile phones connected and not connected to the cellular network. The dose decrease of 9% was measured for original resistors situated between circuit board and battery, in comparison to the dose at the front of the phone. The resistors showed the lower signal when the mobile phone was connected to the cellular network, due to higher temperature inside the housing. The profile of fading was investigated within 3 month period for resistors irradiated with 1 Gy of gamma rays to estimate of the fading coefficient. - Highlights: • Impact of a mobile phone mode (switched on/off) on absorbed dose by resistors was showed. • The influence of the temperature during irradiation on absorbed dose was measured. • Dose distribution inside of a mobile phone was performed. • Fading factor of resistors was calculated

  10. Thermal Characterization of the Overload Carbon Resistors

    Directory of Open Access Journals (Sweden)

    Ivana Kostić

    2013-01-01

    Full Text Available In many applications, the electronic component is not continuously but only intermittently overloaded (e.g., inrush current, short circuit, or discharging interference. With this paper, we provide insight into carbon resistors that have to hold out a rarely occurring transient overload. Using simple electrical circuit, the resistor is overheating with higher current than declared, and dissipation is observed by a thermal camera.

  11. TI--CR--AL--O thin film resistors

    Science.gov (United States)

    Jankowski, Alan F.; Schmid, Anthony P.

    2000-01-01

    Thin films of Ti--Cr--Al--O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti--Cr--Al--O film Ti--Cr--Al--O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti--Cr--Al--O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.

  12. Pinched hysteresis behavior in a PID-controlled resistor

    Directory of Open Access Journals (Sweden)

    M.A. Carrasco-Aguilar

    2018-06-01

    Full Text Available A current-controlled grounded resistor that exhibits a frequency-dependent pinched hysteresis loop is described. A mathematical model describing this behavior is derived and validated numerically, which has the form of a Proportional Integral-Derivative (PID controller. The proposed topology is build by using AD844 commercially available active device configured as second-generation current conveyor and experimental tests are compared with numerical simulations, showing a good agreement among them. Moreover, the proposed PID-controlled resistor can be reconfigured in order to be used in future applications such as programmable analog circuits. Keyword: Pinched hysteresis, Current conveyors, Nonlinear resistor, Proportional-Integral-Derivative Controller

  13. Restrictions on modeling spin injection by resistor networks

    OpenAIRE

    Rashba, Emmanuel

    2008-01-01

    Because of the technical difficulties of solving spin transport equations in inhomogeneous systems, different resistor networks are widely applied for modeling spin transport. By comparing an analytical solution for spin injection across a ferromagnet - paramagnet junction with a resistor model approach, its essential limitations stemming from inhomogeneous spin populations are clarified.

  14. Conceptual design of dump resistor for superconducting CS of SST-1

    International Nuclear Information System (INIS)

    Roy, Swati; Pradhan, Subrata; Panchal, Arun

    2015-01-01

    During the upgradation of SST-1, the resistive central solenoid (CS) coil has been planned to be replaced with Nb 3 Sn based superconducting coil. The superconducting CS will store upto 3.5MJ of magnetic energy per operation cycle with operating current upto 14kA. In case of coil quench, the energy stored in the coils is to be extracted rapidly with a time constant of 1.5s. This will be achieved by inserting a 20m Ohm dump resistor in series with the superconducting CS which is normally shorted by circuit breakers. As a vital part of the superconducting CS quench protection system, a conceptual design of the 20m Ohm dump resistor has been proposed. In this paper, the required design aspects and a dimensional layout of the dump resistor for the new superconducting CS has been presented. Natural air circulation is proposed as cooling method for this dump resistor. The basic structure of the proposed dump resistor comprises of stainless steel grids connected in series in the shape of meander to minimize the stray inductance and increase the surface area for cooling. The entire dump resistor will be an array of such grids connected in series and parallel to meet electrical as well as thermal parameters. The maximum temperature of the proposed dump resistor is upto 350 °C during dump 3.5MJ energy. The proposed design permits indigenous fabrication of the dump resistor using commercially available welding techniques. (author)

  15. Improvement of Transient Stability of Power System by System Damping Series Resistor (SDSR)

    OpenAIRE

    上里, 勝実; 千住, 智信; 当銘, 秀之; 高原, 景滋; Uezato, Katsumi; Senjyu, Tomonobu; Toume, Hideyuki; Takahara, Keiji

    1990-01-01

    The system damping resistor is one of the method for improving the transient stability of power systems. The main circuit is the simple construction so that is low cost and is few abnormal surge, and is superior in ability of economy, reliability and maintenance. Conventionally, most of all system damping resistors have adopted the paralleled resistor, whereas the series resistor is used little.In this paper, we investigate the characteristics of the series resistor by comparing with the para...

  16. Frequency dependence of the active impedance component of silicon thin-film resistors

    International Nuclear Information System (INIS)

    Belogurov, S.V.; Gostilo, V.V.; Yurov, A.S.

    1987-01-01

    A high-resistant resistor on the silicon thin-film substrate considerably superior in noise and frequency performance than commercial resistors is described. The frequency dependence of the active impedance component is tested for determining noise and frequency dependences of silicon thin-film resistors. The obtained results permit to calculate the energy equivalent of resistor noise in nuclear radiation detection units at any temperature according to its frequency characteristic at room temperature

  17. Alternative power supply and dump resistor connections for similar, mutually coupled, superconducting coils

    International Nuclear Information System (INIS)

    Owen, E.W.; Shimer, W.; Wang, S.T.

    1983-01-01

    Alternative methods of connecting similar mutually coupled coils to their power supplies and dump resistors are investigated. The circuits are evaluated for both operating and fault conditions. The factors considered are the voltage to ground during a dump, short circuits, open circuits, quenches, and failure of the protection system to detect a quench. Of particular interest are the currents induced in coils that remain superconducting when one or more coils quench. The alternative connections include combined power supplies, individual dump resistors, combined resistors and series and parallel dump resistors. A new circuit that contains ''coupling'' resistors is proposed. The coupling resistors do not affect normal fast dumps but reduce the peak induced currents while also reducing the energy rating of the dump resistors. Another novel circuit, the series circuit with diodes, is discussed. The MFTF-B central-cell solenoids are used as an example

  18. Alternative power supply and dump resistor connections for similar, mutally coupled, superconducting coils

    International Nuclear Information System (INIS)

    Owen, E.W.; Shimer, D.W.; Wang, S.T.

    1983-01-01

    Alternative methods of connecting similar mutually coupled coils to their power supplies and dump resistors are investigated. The circuits are evaluated for both operating and fault conditions. The factors considered are the voltage to ground during a dump, short circuits, open circuits, quenches, and failure of the protection system to detect a quench. Of particular interest are the currents induced in coils that remain superconducting when one or more coils quench. The alternative connections include combined power supplies, individual dump resistors, combined resistors and series and parallel dump resistors. A new circuit that contains coupling resistors is proposed. The coupling resistors do not affect normal fast dumps but reduce the peak induced currents while also reducing the energy rating of the dump resistors. Another novel circuit, the series circuit with diodes, is discussed. The MFTF-B central-cell solenoids are used as an example

  19. Studi Pengaruh Pengaman Galvanometer terhadap Keakuratan Hasil Pengukuran Resistor pada Jembatan Wheatstone Sederhana

    OpenAIRE

    Herlan, Dedeng

    2014-01-01

    Pengaman galvanometer pada penggunaan jembatan wheastone sebagai alat untuk mengukur besarkomponen resistor R dikembangkan pada penelitian ini. Pengaman galvanometer yang ditelitimemakai bahan resistor yang telah tersedia di pasaran dengan berbagai ukuran. . Berdasarkanbentuk strukturnya yang khas dari sebuah jembatan wheatstone, resistor yang digunakan sebagaipengaman galvanometer dalam penelitian ini, yaitu susunan resistor variabel R3 dan R4dengantipe L yang mengapit salah s...

  20. Air-cooled fast discharge resistors for ITER magnets

    International Nuclear Information System (INIS)

    Tanchuk, Victor; Grigoriev, Sergey; Lokiev, Vladimir; Roshal, Alexander; Song, Inho; Buzykin, Oleg

    2011-01-01

    The ITER superconducting magnets will store up to 50 GJ of magnetic energy per operation cycle. In case of coil quench the energy stored in the coils must be extracted rapidly with a time constant from 7.5 to 14 s. It will be achieved by fast discharge resistors (FDR) normally bridged by circuit breakers and inserted in series with the superconducting coils. The fast discharge of the coils results practically in adiabatic heating of the resistive elements up to 200-300 deg. C. The resistors need to be cooled to the initial temperature over 6-8 h. Natural air circulation is proposed as a cooling method. In order to simulate the temperature response of the resistors to energy released in the resistive plates and to demonstrate their cooling capability within the required time by natural air circulation the numerical model of the resistor cooling circuit has been developed. As the calculations have shown, the developed FDR cooling system based on cooling by natural air circulation is capable of providing the required temperature operation regime of FDRs, but the supply channels are to be optimized so that the cooling time does not exceed the permissible one.

  1. Biased resistor network model for electromigration failure and related phenomena in metallic lines

    Science.gov (United States)

    Pennetta, C.; Alfinito, E.; Reggiani, L.; Fantini, F.; Demunari, I.; Scorzoni, A.

    2004-11-01

    Electromigration phenomena in metallic lines are studied by using a biased resistor network model. The void formation induced by the electron wind is simulated by a stochastic process of resistor breaking, while the growth of mechanical stress inside the line is described by an antagonist process of recovery of the broken resistors. The model accounts for the existence of temperature gradients due to current crowding and Joule heating. Alloying effects are also accounted for. Monte Carlo simulations allow the study within a unified theoretical framework of a variety of relevant features related to the electromigration. The predictions of the model are in excellent agreement with the experiments and in particular with the degradation towards electrical breakdown of stressed Al-Cu thin metallic lines. Detailed investigations refer to the damage pattern, the distribution of the times to failure (TTFs), the generalized Black’s law, the time evolution of the resistance, including the early-stage change due to alloying effects and the electromigration saturation appearing at low current densities or for short line lengths. The dependence of the TTFs on the length and width of the metallic line is also well reproduced. Finally, the model successfully describes the resistance noise properties under steady state conditions.

  2. A low-cost DAC BIST structure using a resistor loop.

    Directory of Open Access Journals (Sweden)

    Jaewon Jang

    Full Text Available This paper proposes a new DAC BIST (digital-to-analog converter built-in self-test structure using a resistor loop known as a DDEM ADC (deterministic dynamic element matching analog-to-digital converter. Methods for both switch reduction and switch effect reduction are proposed for solving problems related to area overhead and accuracy of the conventional DAC BIST. The proposed BIST modifies the length of each resistor in the resistor loop via a merging operation and reduces the number of switches and resistors. In addition, the effect of switches is mitigated using the proposed switch effect reduction method. The accuracy of the proposed BIST is demonstrated by the reduction in the switch effect. The experimental results show that the proposed BIST reduces resource usages and the mismatch error caused by the switches.

  3. A low-cost DAC BIST structure using a resistor loop.

    Science.gov (United States)

    Jang, Jaewon; Kim, Heetae; Kang, Sungho

    2017-01-01

    This paper proposes a new DAC BIST (digital-to-analog converter built-in self-test) structure using a resistor loop known as a DDEM ADC (deterministic dynamic element matching analog-to-digital converter). Methods for both switch reduction and switch effect reduction are proposed for solving problems related to area overhead and accuracy of the conventional DAC BIST. The proposed BIST modifies the length of each resistor in the resistor loop via a merging operation and reduces the number of switches and resistors. In addition, the effect of switches is mitigated using the proposed switch effect reduction method. The accuracy of the proposed BIST is demonstrated by the reduction in the switch effect. The experimental results show that the proposed BIST reduces resource usages and the mismatch error caused by the switches.

  4. A controllable resistor and its applications in pole-zero tracking frequency compensation methods for LDOs

    Energy Technology Data Exchange (ETDEWEB)

    Wang Yi; He Lenian; Ning Zhihua; Shao Yali, E-mail: wangyi@vlsi.zju.edu.c [Institute of VLSI Design, Zhejiang University, Hangzhou 310027 (China)

    2009-09-15

    This paper presents a controllable resistor, which is formed by a MOS-resistor working in the deep triangle region and an auxiliary circuit. The auxiliary circuit can generate the gate-source voltage which is proportional to the output current of an low dropout regulator for the MOS-resistor. Thus, the equivalent output resistance of the MOS-resistor is inversely proportional to the output current, which is a suitable feature for pole-zero tracking frequency compensation methods. By switching the type of the MOS-resistor and current direction through the auxiliary circuit, the controllable resistor can be suitable for different applications. Three pole-zero tracking frequency compensation methods based on a single Miller capacitor with nulling resistor, unit-gain compensation cell and pseudo-ESR (equivalent serial resistor of load capacitor) power stage have been realized by this controllable resistor. Their advantages and limitations are discussed and verified by simulation results.

  5. A controllable resistor and its applications in pole-zero tracking frequency compensation methods for LDOs

    International Nuclear Information System (INIS)

    Wang Yi; He Lenian; Ning Zhihua; Shao Yali

    2009-01-01

    This paper presents a controllable resistor, which is formed by a MOS-resistor working in the deep triangle region and an auxiliary circuit. The auxiliary circuit can generate the gate-source voltage which is proportional to the output current of an low dropout regulator for the MOS-resistor. Thus, the equivalent output resistance of the MOS-resistor is inversely proportional to the output current, which is a suitable feature for pole-zero tracking frequency compensation methods. By switching the type of the MOS-resistor and current direction through the auxiliary circuit, the controllable resistor can be suitable for different applications. Three pole-zero tracking frequency compensation methods based on a single Miller capacitor with nulling resistor, unit-gain compensation cell and pseudo-ESR (equivalent serial resistor of load capacitor) power stage have been realized by this controllable resistor. Their advantages and limitations are discussed and verified by simulation results.

  6. Sliding wear studies of sprayed chromium carbide-nichrome coatings for gas-cooled reactor applications

    International Nuclear Information System (INIS)

    Li, C.C.; Lai, G.Y.

    1978-09-01

    Chromium carbide-nichrome coatings being considered for wear protection of some critical components in high-temperature gas-cooled reactors (HTGR's) were investigated. The coatings were deposited either by the detonation gun or the plasma-arc process. Sliding wear tests were conducted on specimens in a button-on-plate arrangement with sliding velocities of 7.1 x 10 -3 and 7.9 mm/s at 816 0 C in a helium environment simulates HTGR primary coolant chemistry. The coatings containing 75 or 80 wt % chromium carbide exhibited excellent wear resistance. As the chromium carbide content decreased from either 80 or 75 to 55 wt %, with a concurrent decrease in coating hardness, wear-resistance deteriorated. The friction and wear behavior of the soft coating was similar to that of the bare metal--showing severe galling and significant amounts of wear debris. The friction characteristics of the hard coating exhibited a strong velocity dependence with high friction coefficients in low sliding velocity tests ad vice versa. Both the soft coating and bare metal showed no dependence on sliding velocity. The wear behavior observed in this study is of adhesive type, and the wear damage is believed to be controlled primarily by the delamination process

  7. Resistors Improve Ramp Linearity

    Science.gov (United States)

    Kleinberg, L. L.

    1982-01-01

    Simple modification to bootstrap ramp generator gives more linear output over longer sweep times. New circuit adds just two resistors, one of which is adjustable. Modification cancels nonlinearities due to variations in load on charging capacitor and due to changes in charging current as the voltage across capacitor increases.

  8. Characteristics and Breakdown Behaviors of Polysilicon Resistors for High Voltage Applications

    Directory of Open Access Journals (Sweden)

    Xiao-Yu Tang

    2015-01-01

    Full Text Available With the rapid development of the power integrated circuit technology, polysilicon resistors have been widely used not only in traditional CMOS circuits, but also in the high voltage applications. However, there have been few detailed reports about the polysilicon resistors’ characteristics, like voltage and temperature coefficients and breakdown behaviors which are critical parameters of high voltage applications. In this study, we experimentally find that the resistance of the polysilicon resistor with a relatively low doping concentration shows negative voltage and temperature coefficients, while that of the polysilicon resistor with a high doping concentration has positive voltage and temperature coefficients. Moreover, from the experimental results of breakdown voltages of the polysilicon resistors, it could be deduced that the breakdown of polysilicon resistors is thermally rather than electrically induced. We also proposed to add an N-type well underneath the oxide to increase the breakdown voltage in the vertical direction when the substrate is P-type doped.

  9. A novel pseudo resistor structure for biomedical front-end amplifiers.

    Science.gov (United States)

    Yu-Chieh Huang; Tzu-Sen Yang; Shun-Hsi Hsu; Xin-Zhuang Chen; Jin-Chern Chiou

    2015-08-01

    This study proposes a novel pseudo resistor structure with a tunable DC bias voltage for biomedical front-end amplifiers (FEAs). In the proposed FEA, the high-pass filter composed of differential difference amplifier and a pseudo resistor is implemented. The FEA is manufactured by using a standard TSMC 0.35 μm CMOS process. In this study, three types FEAs included three different pseudo resistor are simulated, fabricated and measured for comparison and electrocorticography (ECoG) measurement, and all the results show the proposed pseudo resistor is superior to other two types in bandwidth. In chip implementation, the lower and upper cutoff frequencies of the high-pass filter with the proposed pseudo resistor are 0.15 Hz and 4.98 KHz, respectively. It also demonstrates lower total harmonic distortion performance of -58 dB at 1 kHz and higher stability with wide supply range (1.8 V and 3.3 V) and control voltage range (0.9 V and 1.65 V) than others. Moreover, the FEA with the proposed pseudo successfully recorded spike-and-wave discharges of ECoG signal in in vivo experiment on rat with pentylenetetrazol-induced seizures.

  10. Variable thermal resistor based on self-powered Peltier effect

    OpenAIRE

    Min, Gao; Yatim, N. M.

    2008-01-01

    Heat flow through a thermoelectric material or device can be varied by an electrical resistor connected in parallel to it. This phenomenon is exploited to design a novel thermal component-variable thermal resistor. The theoretical background to this novel application is provided and an experimental result to demonstrate its feasibility is reported.

  11. High-ohmic low-noise resistor for spectrometers with cooled semiconductor detectors

    International Nuclear Information System (INIS)

    Baldin, S.A.; Zhargal, Ch.; Zorin, G.N.; Laskus, T.; Osipenko, B.P.; Revenko, A.V.; Ryakhovskaya, T.I.

    1985-01-01

    BackgroUnd noise and energy resolution of a new type of resistors, designed to be used as a resistance in a feedback circuit of an X-ray spectrometer preamplifier are studied. The resistors are manufactured using the method of photolithography from high-resistance films, formed on the surface of lead-silicate glasses, as a result of redox processes during heat treatment in hydrogen atmosphere. Energy resolution of the spectrometer is measured on the line 55 FeKX(Mn) with the energy 5.8 keV. The conclusion is made, that the level of background noises in the resistors studied is approximately 4 times lower the level of noises in the KVM type resistors, which are commercially produced in industry

  12. Electrical properties and conduction mechanisms of Ru-based thick-film (cermet) resistors

    International Nuclear Information System (INIS)

    Pike, G.E.; Seager, C.H.

    1977-01-01

    This paper presents an experimental study of the electrical conduction mechanisms in thick-film (cermet) resistor. The resistors were made from one custom and three commercially formulated inks with sheet resistivities ranging from 10 2 to 10 6 Ω/D 7 Alembertian in decade increments. Their microstructure and composition have been examined using optical and scanning electron microscopy, electron microprobe analysis, x-ray diffraction, and various chemical analyses. This portion of our study shows that the resistors are heterogeneous mixtures of metallic metal oxide particles (approx.4 x 10 -5 cm in diameter) and a lead silicate glass. The metal oxide particles are ruthenium containing pyrochlores, and are joined to form a continuous three-dimensional network of chain segments. The principal experimental work reported here is an extensive study of the electrical transport properties of the resistors. The temperature dependence of conductance has been measured from 1.2 to 400 K, and two features common to all resistors are found. There is a pronounced decrease in conductance at low temperatures and a shallow maximum at several hundred Kelvin. Within the same range of temperatures the reversible conductance as a function of electric field from 0 to 28 kV/cm has been studied. The resistors are non-Ohmic at all temperatures, but particularly at cryogenic temperatures for low fields. At higher fields the conductance shows a linear variation with electric field. The thick-film resistors are found to have a small dielectric constant and a (nearly) frequency-independent conductance from dc to 50 MHz. The magnetoresistance to 100 kG, the Hall mobility, and the Seebeck coefficient of most of the resistors have been measured and discovered to be quite small. Many of the electrical transport properties have also been determined for the metal oxide particles which were extracted from the fired resistors

  13. Variable thermal resistor based on self-powered Peltier effect

    International Nuclear Information System (INIS)

    Min Gao; Yatim, N Md

    2008-01-01

    Heat flow through a thermoelectric material or device can be varied by an electrical resistor connected in parallel to it. This phenomenon is exploited to design a novel thermal component-variable thermal resistor. The theoretical background to this novel application is provided and an experimental result to demonstrate its feasibility is reported. (fast track communication)

  14. Contact materials for thermostable resistors on the base of Ni-Re alloy

    International Nuclear Information System (INIS)

    Yusipov, H.Yu.; Glasman, L.I.; Arskaya, E.P.; Lazarev, Eh.M.; Korotkov, N.A.

    1979-01-01

    Given are the electron diffraction analysis results and the operational characteristics of the contact materials, used in the heat-resistant thin-filmed resistors (TFR), made on the basis of the Ni-Re system alloy. The results are compared with the pure nickel. Operational tests of the thin-filmed resistors, having (NR10-VP) alloy contacts, showed that the departure of the resistors nominals is almost twice as small as that for the resistors, having pure nickel contacts. The use of this alloy permits to increase the thermal stability and durability of the TFRs, if they are used under extreme conditions

  15. Effects of surfaces on resistor percolation.

    Science.gov (United States)

    Stenull, O; Janssen, H K; Oerding, K

    2001-05-01

    We study the effects of surfaces on resistor percolation at the instance of a semi-infinite geometry. Particularly we are interested in the average resistance between two connected ports located on the surface. Based on general grounds as symmetries and relevance we introduce a field theoretic Hamiltonian for semi-infinite random resistor networks. We show that the surface contributes to the average resistance only in terms of corrections to scaling. These corrections are governed by surface resistance exponents. We carry out renormalization-group improved perturbation calculations for the special and the ordinary transition. We calculate the surface resistance exponents phiS and phiS(infinity) for the special and the ordinary transition, respectively, to one-loop order.

  16. Characteristics of burden resistors for high-precision DC current transducers

    CERN Document Server

    Fernqvist, G; Hudson, G; Pickering, J

    2007-01-01

    The DC current transducer (DCCT) and accompanying A/D converter determine the precision of a power converter in accelerator operation. In the LHC context this precision approaches 10-6 (1 ppm). Inside the DCCT a burden resistor is used to convert the current to an output voltage. The performance of this resistor is crucial for the accuracy, temperature behaviour, settling time and longterm drift of the DCCT. This paper reports on evaluations, a new parameter called â€ワpower coefficient” (PC) and test results from some different types of resistors available on the market.

  17. Pressure-Sensitive Resistor Material

    Science.gov (United States)

    Du Fresne, E. R.

    1986-01-01

    Low-conductivity particles in rubber offer wide dynamic range. Sensor consists of particles of relatively low conductivity embedded in rubber. Resistance of sensor decreases by about 100 times as pressure on it increases from zero to 0.8 MN/M to the second power. Resistor promising candidate as tactile sensor for robots and remote manipulators.

  18. An HIV feedback resistor: auto-regulatory circuit deactivator and noise buffer.

    Science.gov (United States)

    Weinberger, Leor S; Shenk, Thomas

    2007-01-01

    Animal viruses (e.g., lentiviruses and herpesviruses) use transcriptional positive feedback (i.e., transactivation) to regulate their gene expression. But positive-feedback circuits are inherently unstable when turned off, which presents a particular dilemma for latent viruses that lack transcriptional repressor motifs. Here we show that a dissipative feedback resistor, composed of enzymatic interconversion of the transactivator, converts transactivation circuits into excitable systems that generate transient pulses of expression, which decay to zero. We use HIV-1 as a model system and analyze single-cell expression kinetics to explore whether the HIV-1 transactivator of transcription (Tat) uses a resistor to shut off transactivation. The Tat feedback circuit was found to lack bi-stability and Tat self-cooperativity but exhibited a pulse of activity upon transactivation, all in agreement with the feedback resistor model. Guided by a mathematical model, biochemical and genetic perturbation of the suspected Tat feedback resistor altered the circuit's stability and reduced susceptibility to molecular noise, in agreement with model predictions. We propose that the feedback resistor is a necessary, but possibly not sufficient, condition for turning off noisy transactivation circuits lacking a repressor motif (e.g., HIV-1 Tat). Feedback resistors may be a paradigm for examining other auto-regulatory circuits and may inform upon how viral latency is established, maintained, and broken.

  19. A dc carpet cloak based on resistor networks.

    Science.gov (United States)

    Mei, Zhong Lei; Liu, Yu Sha; Yang, Fan; Cui, Tie Jun

    2012-11-05

    We propose, design, and implement a two-dimensional dc carpet cloak for steady electric field using the transformation optics (TO) method. Based on the circuit theory, we introduce a resistor network to mimic the resulting anisotropic conducting medium. The experimental prototype is fabricated using metal film resistors, and the measured results agree perfectly well with theoretical predictions. This study gives the first experimental verification of a dc carpet cloak, which expands the application of TO theory, and has potential applications in related areas.

  20. System and method of modulating electrical signals using photoconductive wide bandgap semiconductors as variable resistors

    Science.gov (United States)

    Harris, John Richardson; Caporaso, George J; Sampayan, Stephen E

    2013-10-22

    A system and method for producing modulated electrical signals. The system uses a variable resistor having a photoconductive wide bandgap semiconductor material construction whose conduction response to changes in amplitude of incident radiation is substantially linear throughout a non-saturation region to enable operation in non-avalanche mode. The system also includes a modulated radiation source, such as a modulated laser, for producing amplitude-modulated radiation with which to direct upon the variable resistor and modulate its conduction response. A voltage source and an output port, are both operably connected to the variable resistor so that an electrical signal may be produced at the output port by way of the variable resistor, either generated by activation of the variable resistor or propagating through the variable resistor. In this manner, the electrical signal is modulated by the variable resistor so as to have a waveform substantially similar to the amplitude-modulated radiation.

  1. New internal multi-range resistors for ac voltage calibration by using TVC

    International Nuclear Information System (INIS)

    Ali, Rasha S M

    2015-01-01

    Accurate calibration of ac voltages up to 1000 V by using thermal converters requires range resistors connected in series with the converter. The combination of a thermal converter and range resistor is known as the thermal voltage converter. In this paper, multi-range internal range resistors are designed and implemented in the National Institute for Standards (NIS), Egypt to cover the ac voltage ranges from 10 V to 750 V. The range resistor values are 2 kΩ, 10 kΩ, 20 kΩ, 40 kΩ, 100 kΩ, and 150 kΩ to cover the voltage ranges 10 V, 50 V, 100 V, 200 V, 500 V, and 750 V, respectively. The six range resistors are mounted in series with a single-junction thermo-element in the same box to provide a new thermal voltage converter. The required range resistor is selected by using a six-pin selector switch. Each resistor is connected to a selector pin. The new thermal voltage converter ranges are automatically calibrated against other standard thermal voltage converters at different frequencies by using a LabVIEW program to determine their ac–dc transfer difference at each range. The expanded uncertainties are estimated according to the GUM for all ranges at different frequencies. The performance of the new thermal voltage converter is also evaluated by comparing its ac–dc differences and its accuracy in measuring the ac voltage at different frequencies with a traditional thermal voltage converter. (paper)

  2. Improved cryo-resistors with low temperature coefficients

    International Nuclear Information System (INIS)

    Warnecke, P.; Braun, E.

    1989-01-01

    A new type of 10- and 12.9κΩ cryo-resistors operating in a liquid helium bath with small temperature coefficient of resistivity have been built. Details for the fabrication of these improved cryo-resistors are reported. Experimental evidence of their drift rates are on the order of a few parts in 10 9 per day. A reduction of the mean pressure of 98.7 kPa in the helium dewar to 86.1 kPa, corresponding to a temperature decrease from 4.19 to 4.07 Κ, did not change the resistance value by more than the experimental resolution of 4 parts in 10 8

  3. Scaling law of resistance fluctuations in stationary random resistor networks

    Science.gov (United States)

    Pennetta; Trefan; Reggiani

    2000-12-11

    In a random resistor network we consider the simultaneous evolution of two competing random processes consisting in breaking and recovering the elementary resistors with probabilities W(D) and W(R). The condition W(R)>W(D)/(1+W(D)) leads to a stationary state, while in the opposite case, the broken resistor fraction reaches the percolation threshold p(c). We study the resistance noise of this system under stationary conditions by Monte Carlo simulations. The variance of resistance fluctuations is found to follow a scaling law |p-p(c)|(-kappa(0)) with kappa(0) = 5.5. The proposed model relates quantitatively the defectiveness of a disordered media with its electrical and excess-noise characteristics.

  4. Sensitivity enhancement of polysilicon piezo-resistive pressure sensors with phosphorous diffused resistors

    International Nuclear Information System (INIS)

    Sivakumar, K; Dasgupta, N; Bhat, K N; Natarajan, K

    2006-01-01

    It is generally accepted that the piezo-resistive coefficient in single crystal silicon is higher when P-type impurities such as boron are used for doping the resistors. In this paper we demonstrate that the sensitivity of polycrystalline silicon piezo-resistive pressure sensors can be enhanced considerably when phosphorus diffusion source is used instead of boron dopant for realizing the piezo-resistors. Pressure sensors have been designed and fabricated with the polycrystalline piezo-resistors connected in the form of a Wheatstone bridge and laid out on thermal oxide grown on membranes obtained with a Silicon On Insulator (SOI) approach. The SOI wafers required for this purpose have been realized in-house by Silicon Fusion Bonding (SFB) and etch back technique in our laboratory. This approach provides excellent isolation between the resistors and enables zero temperature coefficient of the polysilicon resistor. The results obtained in our laboratory have clearly demonstrated that by optimizing the phosphorus diffusion temperature and duration, it is possible to achieve sensitivities in excess of 20mV /Bar for bridge input voltage of 10V, with linearity within 1% over a differential pressure range up to 10Bar (10 6 Pascal), and burst pressure in excess of 50 Bar as compared to the 10mV /Bar sensitivity obtained with boron doped polysilicon piezo-resistors. This enhancement is attributed to grain boundary passivation by phosphorous atoms

  5. Remote Experiments in Resistor Measurement

    Directory of Open Access Journals (Sweden)

    Popescu Viorel

    2009-10-01

    Full Text Available The paper describes blended learningapproach to teaching resistor measurement. It is basedon “Learning by Doing” paradigm: interacticesimulation, laboratory plants, real experimentsaccessed by Web Publishing Tools under LabVIEW.Studying and experimenting access is opened for 24hours a day, 7 days a week under Moodle bookingsystem.

  6. Defect tolerance in resistor-logic demultiplexers for nanoelectronics.

    Science.gov (United States)

    Kuekes, Philip J; Robinett, Warren; Williams, R Stanley

    2006-05-28

    Since defect rates are expected to be high in nanocircuitry, we analyse the performance of resistor-based demultiplexers in the presence of defects. The defects observed to occur in fabricated nanoscale crossbars are stuck-open, stuck-closed, stuck-short, broken-wire, and adjacent-wire-short defects. We analyse the distribution of voltages on the nanowire output lines of a resistor-logic demultiplexer, based on an arbitrary constant-weight code, when defects occur. These analyses show that resistor-logic demultiplexers can tolerate small numbers of stuck-closed, stuck-open, and broken-wire defects on individual nanowires, at the cost of some degradation in the circuit's worst-case voltage margin. For stuck-short and adjacent-wire-short defects, and for nanowires with too many defects of the other types, the demultiplexer can still achieve error-free performance, but with a smaller set of output lines. This design thus has two layers of defect tolerance: the coding layer improves the yield of usable output lines, and an avoidance layer guarantees that error-free performance is achieved.

  7. Rational and irrational numbers from unit resistors

    International Nuclear Information System (INIS)

    Kasperski, Maciej; Kłobus, Waldemar

    2014-01-01

    We address the problem of constructing a network of unit resistors such that it enables the retrieval of an arbitrary value of equivalent resistance. In particular, we employ the notion of continued fractions to construct a ladder network by which we can easily obtain any fractional value resistance. In addition, since any irrational number is associated with an infinite continued fraction, we discuss the convergence of the equivalent resistance of an infinite resistive ladder and various aspects concerning the approximations of arbitrary numbers attained by adding additional resistors successively to the network. The presented methods can be easily implemented in an educational laboratory and offer an interesting addition to the topic of Ohm’s law. (paper)

  8. Switching phase states in two van der Pol oscillators coupled by ttochastically time-varying resistor

    OpenAIRE

    Uwate, Y; Nishio, Y; Stoop, R

    2009-01-01

    We explore the synchronization and switching behavior of a system of two identical van der Pol oscillators coupled by a stochastically timevarying resistor. Triggered by the time-varying resistor, the system of oscillators switches between synchronized and anti-synchronized behavior. We find that the preference of the synchronized/antisynchronized state is determined by the ratio of the probabilities of the two resistor states. The length of the phases of maintained resistor states, however, ...

  9. Free-standing silicon micro machined resistors from (110) substrate

    International Nuclear Information System (INIS)

    Bernardini, R.; Diligenti, A.; Nannini, A.; Piotto, M.

    1998-01-01

    A simple process to obtain silicon planes released from the substrate and provided with large area pads for ohmic contacts is described. Resistors 500 μm long with a 40 μm x 1 μm cross section were obtained. Resistance measurements showed that the current flows in a reduced cross section, probably owing to the presence of a superficial depletion layer. Preliminary magnetoresistance measurements are presented. Reduction of the resistor cross section can be obtained by thermal oxidation

  10. SPICE Modeling of Body Bias Effect in 4H-SiC Integrated Circuit Resistors

    Science.gov (United States)

    Neudeck, Philip G.

    2017-01-01

    The DC electrical behavior of n-type 4H-SiC resistors used for realizing 500C durable integrated circuits (ICs) is studied as a function of substrate bias and temperature. Improved fidelity electrical simulation is described using SPICE NMOS model to simulate resistor substrate body bias effect that is absent from the SPICE semiconductor resistor model.

  11. Conceptual design of Dump resistor for Superconducting CS of SST-1

    Science.gov (United States)

    Roy, Swati; Raj, Piyush; Panchal, Arun; Pradhan, Subrata

    2017-04-01

    Under upgradation activities for SST-1, the existing resistive central solenoid (CS) coil will be replaced with Nb3Sn based superconducting coil. Design of Central solenoid had been completed and some of the initiative has already taken for its manufacturing. The superconducting CS will store upto 3 MJ of magnetic energy per operation cycle with operating current upto 14 kA. During quench, energy stored in the coils has to be extracted rapidly with a time constant of 1.5 s by inserting a 20 mΩ dump resistor in series with the superconducting CS which is normally shorted by circuit breakers. As a critical part of the superconducting CS quench protection system, a conceptual design of the 20 mΩ dump resistor has been proposed. The required design aspects and a dimensional layout of the dump resistor for the new superconducting CS has been presented and discussed. The basic structure of the proposed dump resistor comprises of stainless steel grids connected in series in the form of meander to minimize the stray inductance and increase the surface area for cooling. Such an array of grids connected in series and parallel will cater to the electrical as well as thermal parameters. It will be cooled by natural convection. During operation, the estimated maximum temperature of the proposed dump resistor will raise upto 600 K.

  12. Break-collapse method for resistor networks-renormalization group applications

    International Nuclear Information System (INIS)

    Tsallis, C.; Coniglio, A.; Redner, S.

    1982-01-01

    The break-collapse method recently introduced for the q-state Potts model is adapted for resistor networks. This method greatly simplifies the calculation of the conductance of an arbitrary two-terminal d-dimensional array of conductances, obviating the use of either Kirchhoff's laws or the star-triangle or similiar transformations. Related properties are discussed as well. An illustrative real-space renormalization-group treatment of the random resistor problem on the square lattice is presented; satisfactory results are obtained. (Author) [pt

  13. Recursion-transform method for computing resistance of the complex resistor network with three arbitrary boundaries.

    Science.gov (United States)

    Tan, Zhi-Zhong

    2015-05-01

    We develop a general recursion-transform (R-T) method for a two-dimensional resistor network with a zero resistor boundary. As applications of the R-T method, we consider a significant example to illuminate the usefulness for calculating resistance of a rectangular m×n resistor network with a null resistor and three arbitrary boundaries, a problem never solved before, since Green's function techniques and Laplacian matrix approaches are invalid in this case. Looking for the exact calculation of the resistance of a binary resistor network is important but difficult in the case of an arbitrary boundary since the boundary is like a wall or trap which affects the behavior of finite network. In this paper we obtain several general formulas of resistance between any two nodes in a nonregular m×n resistor network in both finite and infinite cases. In particular, 12 special cases are given by reducing one of the general formulas to understand its applications and meanings, and an integral identity is found when we compare the equivalent resistance of two different structures of the same problem in a resistor network.

  14. The Sponge Resistor Model--A Hydrodynamic Analog to Illustrate Ohm's Law, the Resistor Equation R=?l/A, and Resistors in Series and Parallel

    Science.gov (United States)

    Pfister, Hans

    2014-01-01

    Physics students encountering electric circuits for the first time often ask why adding more resistors to a circuit sometimes increases and sometimes decreases the resulting total resistance. It appears that these students have an inadequate understanding of current flow and resistance. Students who do not adopt a model of current, voltage, and…

  15. Effects of high voltage pulse trimming on structural properties of thick-film resistors

    Directory of Open Access Journals (Sweden)

    Stanimirović Zdravko

    2017-01-01

    Full Text Available Nowadays, compact and reliable electronic devices including up-to-date ceramic micro-electro-mechanical systems require thick-film resistors with significantly reduced dimensions and stable and precise resistance values. For that reason, instead of standard laser trimming method, high voltage pulse trimming of thick-film resistors is being introduced. This method allows controlled and reliable resistance adjustment regardless of resistor position or dimensions and without the presence of cuts. However, it causes irreversible structural changes in the pseudorandom network formed during sintering causing the changes in conducting mechanisms. In this paper results of the experimental investigation of high voltage pulse trimming of thick-film resistors are presented. Obtained results are analyzed and correlations between resistance and low-frequency noise changes and changes in conducting mechanisms in resistors due to high voltage pulse trimming are observed. Sources of measured fluctuations are identified and it is shown that this type of trimming is a valid alternative trimming method to the dominant laser trimming. [Project of the Serbian Ministry of Education, Science and Technological Development, Grant no. III44003 and III45007

  16. Laser Trimming of CuAlMo Thin-Film Resistors: Effect of Laser Processing Parameters

    Science.gov (United States)

    Birkett, Martin; Penlington, Roger

    2012-08-01

    This paper reports the effect of varying laser trimming process parameters on the electrical performance of a novel CuAlMo thin-film resistor material. The films were prepared on Al2O3 substrates by direct-current (DC) magnetron sputtering, before being laser trimmed to target resistance value. The effect of varying key laser parameters of power, Q-rate, and bite size on the resistor stability and tolerance accuracy were systematically investigated. By reducing laser power and bite size and balancing this with Q-rate setting, significant improvements in resistor stability and resistor tolerance accuracies of less than ±0.5% were achieved.

  17. X-Ray Characterization of Resistor/Dielectric Material for Low Temperature Co-Fired Ceramic Packages

    International Nuclear Information System (INIS)

    DIMOS, DUANE B.; KOTULA, PAUL G.; RODRIGUEZ, MARK A.; YANG, PIN

    1999-01-01

    High temperature XRD has been employed to monitor the devitrification of Dupont 951 low temperature co-fired ceramic (LTCC) and Dupont E84005 resistor ink. The LTCC underwent devitrification to an anorthite phase in the range of 835-875 C with activation energy of 180 kJ/mol as calculated from kinetic data. The resistor paste underwent devitrification in the 835-875 C range forming monoclinic and hexagonal celcian phases plus a phase believed to be a zinc-silicate. RuO(sub 2) appeared to be stable within this devitrified resistor matrix. X-ray radiography of a co-fired circuit indicated good structural/chemical compatibility between the resistor and LTCC

  18. Automated crack detection in conductive smart-concrete structures using a resistor mesh model

    Science.gov (United States)

    Downey, Austin; D'Alessandro, Antonella; Ubertini, Filippo; Laflamme, Simon

    2018-03-01

    Various nondestructive evaluation techniques are currently used to automatically detect and monitor cracks in concrete infrastructure. However, these methods often lack the scalability and cost-effectiveness over large geometries. A solution is the use of self-sensing carbon-doped cementitious materials. These self-sensing materials are capable of providing a measurable change in electrical output that can be related to their damage state. Previous work by the authors showed that a resistor mesh model could be used to track damage in structural components fabricated from electrically conductive concrete, where damage was located through the identification of high resistance value resistors in a resistor mesh model. In this work, an automated damage detection strategy that works through placing high value resistors into the previously developed resistor mesh model using a sequential Monte Carlo method is introduced. Here, high value resistors are used to mimic the internal condition of damaged cementitious specimens. The proposed automated damage detection method is experimentally validated using a 500 × 500 × 50 mm3 reinforced cement paste plate doped with multi-walled carbon nanotubes exposed to 100 identical impact tests. Results demonstrate that the proposed Monte Carlo method is capable of detecting and localizing the most prominent damage in a structure, demonstrating that automated damage detection in smart-concrete structures is a promising strategy for real-time structural health monitoring of civil infrastructure.

  19. Advanced ceramic composite for high energy resistors. Characterization of electrical and physical properties

    International Nuclear Information System (INIS)

    Farrokh, Fattahi; Navid, Tagizadegan; Naser, Tabatabaei; Ahmad, Rashtehizadeh

    2005-01-01

    There is a need to characterize and apply advanced materials to improve the performance of components used in pulse power systems. One area of innovation is the use of bulk electrically conductive ceramics for non-inductive, high energy and high power electrical resistors. Standard Ceramics Inc. has developed a unique silicon carbide structural ceramic composite which exhibits electrical conductivity. The new conductive bulk ceramic material has a controlled microstructure, which results in improved homogeneity, making the material suitable for use as a non-inductive high energy resistor. This paper describes characterization of the material's physical and electrical properties and relates them to improvements in low-inductance, high temperature, high power density and high energy density resistors. The bulk resistor approach offers high reliability through better mechanical properties and simplicity of construction

  20. Ruthenium oxide resistors as sensitive elements of composite bolometers

    International Nuclear Information System (INIS)

    Benassai, M.; Gallinaro, G.; Gatti, F.; Siri, S.; Vitale, S.

    1988-01-01

    Bolometers for particle detection made with Ruthenium oxide thermistors could be produced by means of a simple technique on a variety of different materials as substrata. Preliminary results on alpha particle detection with devices realized using commercial RuO 2 thick film resistor (Tfr) are considered positive for devices operating between. 3 and .1 k and determined us to pursue further the idea. Ruthenium oxide resistors on sapphire at the moment are being prepared. The behaviour of these devices st temperatures lower than .1 k has to be investigated in more detail

  1. 30 CFR 75.801 - Grounding resistors.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Grounding resistors. 75.801 Section 75.801 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR COAL MINE SAFETY AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Underground High-Voltage Distribution § 75.801 Grounding...

  2. The resistance changes of carbon and metal oxide film resistors by irradiation of 60Co γ rays

    International Nuclear Information System (INIS)

    Okamoto, Shinichi; Fujino, Takahiro; Furuta, Junichiro; Yoshida, Toshio

    1979-01-01

    The resistance changes of glass-sealed deposited-carbon-film and carbon-coated-film resitors and metal oxide glazed resistors made in USA were studied by gamma-ray irradiation. (1) The resistances of deposited-carbon-film resistors of 50, 100 and 200 megohm did not change by irradiation of gamma rays up to 1.9 x 10 9 R. (2) The carbon-coated-film resistors of 100, 1000, 10000 and 100000 megohm had negative resistance changes by irradiation of gamma rays up to 9.9 x 10 8 R. (3) The resistances of metal oxide glazed resistors of 100, 1000 and 10000 megohm did not change by irradiation of gamma rays up to 8.8 x 10 8 R. When radiation monitoring instruments with hi-meg resistors are used in a gamma field with high intensity, the resistors must not be exposed to gamma rays with high doses, or the resistors which do not change by gamma-ray irradiation must be selected. (author)

  3. Ceramic composite resistors of B4C modified by TIO2 and glass phase

    International Nuclear Information System (INIS)

    Klimiec, E.; Zaraska, W.; Stobiecki, T.

    1998-01-01

    Technical progress in the manufacturing technology of composite materials resulted in arising of new generation of bulk resistors, resistant to high levels of overloads and high temperature. These resistors can be applied in extremely heavy working conditions, for instance in cooperation with ignition circuits. The resistors investigated in our research were performed on the basis of ceramic composite consisted of semiconductor boron carbide B 4 C as conductive phase, aluminium oxide Al 2 O 3 and non-alkali glass as insulators and titanium dioxide TiO 2 . The technological procedure of the fabrication of resistors and the results of the tests, such as temperature dependence of the electrical resistance exploitation trials, are presented. (author)

  4. Comparison of boron and neon damage effects in boron ion-implanted resistors

    International Nuclear Information System (INIS)

    MacIver, B.A.

    1975-01-01

    Boron and neon damage implants were used in fabricating integrated-circuit resistors in silicon. Resistor properties were studied as functions of damaging ion species and dose. Sheet resistances in the 10 000 Ω/square range were obtained with low temperature and voltage sensitivities and d.c. isolation. (author)

  5. Random access memory immune to single event upset using a T-resistor

    Science.gov (United States)

    Ochoa, Jr., Agustin

    1989-01-01

    In a random access memory cell, a resistance "T" decoupling network in each leg of the cell reduces random errors caused by the interaction of energetic ions with the semiconductor material forming the cell. The cell comprises two parallel legs each containing a series pair of complementary MOS transistors having a common gate connected to the node between the transistors of the opposite leg. The decoupling network in each leg is formed by a series pair of resistors between the transistors together with a third resistor interconnecting the junction between the pair of resistors and the gate of the transistor pair forming the opposite leg of the cell.

  6. Method of preparing high-temperature-stable thin-film resistors

    Science.gov (United States)

    Raymond, L.S.

    1980-11-12

    A chemical vapor deposition method for manufacturing tungsten-silicide thin-film resistors of predetermined bulk resistivity and temperature coefficient of resistance (TCR) is disclosed. Gaseous compounds of tungsten and silicon are decomposed on a hot substrate to deposit a thin-film of tungsten-silicide. The TCR of the film is determined by the crystallinity of the grain structure, which is controlled by the temperature of deposition and the tungsten to silicon ratio. The bulk resistivity is determined by the tungsten to silicon ratio. Manipulation of the fabrication parameters allows for sensitive control of the properties of the resistor.

  7. Electrochemical Migration on Electronic Chip Resistors in Chloride Environments

    DEFF Research Database (Denmark)

    Minzari, Daniel; Jellesen, Morten Stendahl; Møller, Per

    2009-01-01

    Electrochemical migration behavior of end terminals on ceramic chip resistors (CCRs) was studied using a novel experimental setup in varying sodium chloride concentrations from 0 to 1000 ppm. The chip resistor used for the investigation was 10-kΩ CCR size 0805 with end terminals made of 97Sn3Pb...... rate of the Sn and stability of Sn ions in the solution layer play a significant role in the formation of dendrites, which is controlled by chloride concentration and potential bias. Morphology, composition, and resistance of the dendrites were dependent on chloride concentration and potential....

  8. Method of preparing high-temperature-stable thin-film resistors

    International Nuclear Information System (INIS)

    Raymond, L.S.

    1983-01-01

    A chemical vapor deposition method is disclosed for manufacturing tungsten-silicide thin-film resistors of predetermined bulk resistivity and temperature coefficient of resistance (TCR). Gaseous compounds of tungsten and silicon are decomposed on a hot substrate to deposit a thin-film of tungsten-silicide. The TCR of the film is determined by the crystallinity of the grain structure, which is controlled by the temperature of deposition and the tungsten to silicon ratio. The bulk resistivity is determined by the tungsten to silicon ratio. Manipulation of the fabrication parameters allows for sensitive control of the properties of the resistor

  9. Electrical properties of nano-resistors made from the Zr-doped HfO2 high-k dielectric film

    Science.gov (United States)

    Zhang, Shumao; Kuo, Yue

    2018-03-01

    Electrical properties of nano-sized resistors made from the breakdown of the metal-oxide-semiconductor capacitor composed of the amorphous high-k gate dielectric have been investigated under different stress voltages and temperatures. The effective resistance of nano-resistors in the device was estimated from the I-V curve in the high voltage range. It decreased with the increase of the number of resistors. The resistance showed complicated temperature dependence, i.e. it neither behaves like a conductor nor a semiconductor. In the low voltage operation range, the charge transfer was controlled by the Schottky barrier at the nano-resistor/Si interface. The barrier height decreased with the increase of stress voltage, which was probably caused by the change of the nano-resistor composition. Separately, it was observed that the barrier height was dependent on the temperature, which was probably due to the dynamic nano-resistor formation process and the inhomogeneous barrier height distribution. The unique electrical characteristics of this new type of nano-resistors are important for many electronic and optoelectronic applications.

  10. SEU simulation and testing of resistor-hardened D-latches in the SA3300 microprocessor

    International Nuclear Information System (INIS)

    Sexton, F.W.; Corbett, W.T.; Treece, R.K.; Hass, K.J.; Axness, C.L.; Hash, G.L.; Shaneyfelt, M.R.; Wunsch, T.F.; Hughes, K.L.

    1991-01-01

    In this paper the SEU tolerance of the SA3300 microprocessor with feedback resistors is presented and compared to the SA3300 without feedback resistors and to the commercial version (NS32016). Upset threshold at room temperature increased from 23 MeV-cm 2 /mg and 180 MeV-cm 2 /mg with feedback resistors of 50 kΩ and 160 kΩ, respectively. The performance goal of 10 MHz over the full temperature range of -55 degrees C to +125 degrees C is exceeded for feedback resistors of 160 kΩ and less. Error rate calculations for this design predict that the error rate is less than once every 100 years when 50 kΩ feedback resistors are used in the D-latch design. Analysis of the SEU response using a lumped-parameter circuit simulator imply a charge collection depth of 4.5 μm. This is much deeper than the authors would expect for prompt collection in the epi and funnel regions and has been explained in terms of diffusion current in the heavily doped substrate

  11. Design of a Compact Dump Resistor System for LCD Magnet

    CERN Document Server

    Gaddi, A

    2010-01-01

    In this technical note we suggest a possible solution for the choice of the detector magnet dump resistor. The push-pull scenario for Linear Collider Detectors imposes new solutions for magnet powering and protection lines, else than what developed for LHC detectors. The magnet dump resistor is the protecting equipment that has the function of extracting a significant amount of magnetic stored energy, from the coil winding to a dump. The LCD magnet has to move with the experiment from the garage to the beam position, so it has to be compact and reliable at the same time. We make here a proposal for a passive water-cooled dumper, we calculate the minimum amount of water required, the resistor hot-spot temperature, the overall mechanical design. The electrical part is not covered by this note, as it can be assumed that the solutions adopted by LHC detector magnets, in terms of quench instrumentation, energy extraction and maximum voltage, are not significantly affected by the push-pull scenario.

  12. Study and field verification of the effects of removing closing resistors from 500 kV circuit breakers

    International Nuclear Information System (INIS)

    Selin, D.A.; Agrawal, B.L.; Farmer, R.G.; Demcko, J.A.

    1992-01-01

    Closing resistors in EHV circuit breakers are frequently used to reduce switching transients on lines thus preventing flashovers during line energization. Maintenance and failures of such closing resistors can be costly and reduce transmission system reliability. For these reasons, APS conducted an investigation into the technical feasibility of operating its 500 kV without closing resistors. This paper describes study results of removing closing resistors from 500 kV breakers in a system which employs older technology silicon carbide type surge arresters. The paper also describes results of field tests of the expected flashover rates calculated in the study. These field tests involve repeatedly energizing a 258 mile 500 kV line using a breaker in which the closing resistors are disabled. Transient overvoltages captured during the tests are compared with predicted overvoltages. The study concludes that closing resistors may be removed from the subject system without unacceptable consequences

  13. Inclusion of Body Bias Effect in SPICE Modeling of 4H-SiC Integrated Circuit Resistors

    Science.gov (United States)

    Neudeck, Philip G.

    2017-01-01

    The DC electrical behavior of n-type 4H-SiC resistors used for realizing 500 degrees Celsius durable integrated circuits (ICs) is studied as a function of substrate bias and temperature. Improved fidelity electrical simulation is described using SPICE NMOS model to simulate resistor substrate body bias effect that is absent from the SPICE semiconductor resistor model.

  14. Inclusion of Body-Bias Effect in SPICE Modeling of 4H-SiC Integrated Circuit Resistors

    Science.gov (United States)

    Neudeck, Philip G.

    2017-01-01

    The DC electrical behavior of n-type 4H-SiC resistors used for realizing 500 C durable integrated circuits (ICs) is studied as a function of substrate bias and temperature. Improved fidelity electrical simulation is described using SPICE NMOS model to simulate resistor substrate body bias effect that is absent from the SPICE semiconductor resistor model.

  15. Ni-Cr thin film resistor fabrication for GaAs monolithic microwave integrated circuits

    International Nuclear Information System (INIS)

    Vinayak, Seema; Vyas, H.P.; Muraleedharan, K.; Vankar, V.D.

    2006-01-01

    Different Ni-Cr alloys were sputter-deposited on silicon nitride-coated GaAs substrates and covered with a spin-coated polyimide layer to develop thin film metal resistors for GaAs monolithic microwave integrated circuits (MMICs). The contact to the resistors was made through vias in the polyimide layer by sputter-deposited Ti/Au interconnect metal. The variation of contact resistance, sheet resistance (R S ) and temperature coefficient of resistance (TCR) of the Ni-Cr resistors with fabrication process parameters such as polyimide curing thermal cycles and surface treatment given to the wafer prior to interconnect metal deposition has been studied. The Ni-Cr thin film resistors exhibited lower R S and higher TCR compared to the as-deposited Ni-Cr film that was not subjected to thermal cycles involved in the MMIC fabrication process. The change in resistivity and TCR values of Ni-Cr films during the MMIC fabrication process was found to be dependent on the Ni-Cr alloy composition

  16. Effect of diffusion on percolation threshold in thick-film resistors

    International Nuclear Information System (INIS)

    Abdurakhmanov, G.

    2009-01-01

    Resistivity ρ(C) of thick-film resistors doped by metal oxides is simulated as a function of volume content C of the ligature, firing temperature T f and firing time τ. It is proved that the doping of a glass during firing of the thick film resistor is rather uniform. It is shown also, that conductance takes place in the whole volume of the sample, but not through the sole infinite cluster only, even the content of a conductive phase is below than the theoretical percolation threshold value.

  17. A random access memory immune to single event upset using a T-Resistor

    Science.gov (United States)

    Ochoa, A. Jr.

    1987-10-28

    In a random access memory cell, a resistance ''T'' decoupling network in each leg of the cell reduces random errors caused by the interaction of energetic ions with the semiconductor material forming the cell. The cell comprises two parallel legs each containing a series pair of complementary MOS transistors having a common gate connected to the node between the transistors of the opposite leg. The decoupling network in each leg is formed by a series pair of resistors between the transistors together with a third resistor interconnecting the junction between the pair of resistors and the gate of the transistor pair forming the opposite leg of the cell. 4 figs.

  18. Infant breathing rate counter based on variable resistor for pneumonia

    Science.gov (United States)

    Sakti, Novi Angga; Hardiyanto, Ardy Dwi; La Febry Andira R., C.; Camelya, Kesa; Widiyanti, Prihartini

    2016-03-01

    Pneumonia is one of the leading causes of death in new born baby in Indonesia. According to WHO in 2002, breathing rate is very important index to be the symptom of pneumonia. In the Community Health Center, the nurses count with a stopwatch for exactly one minute. Miscalculation in Community Health Center occurs because of long time concentration and focus on two object at once. This calculation errors can cause the baby who should be admitted to the hospital only be attended at home. Therefore, an accurate breathing rate counter at Community Health Center level is necessary. In this work, resistance change of variable resistor is made to be breathing rate counter. Resistance change in voltage divider can produce voltage change. If the variable resistance moves periodically, the voltage will change periodically too. The voltage change counted by software in the microcontroller. For the every mm shift at the variable resistor produce average 0.96 voltage change. The software can count the number of wave generated by shifting resistor.

  19. Thermometry using 1/8 W carbon resistors in a temperature region around 10 mK

    International Nuclear Information System (INIS)

    Kobayasi, S.; Shinohara, M.; Ono, K.

    1976-01-01

    The resistance-temperature characteristics of 1/8 W carbon resistors of grade ERC-18SG, manufactured by Matsushita, with the nominal values of 48, 82, 100, 220 and 330 Ω have been measured in the region 4.2 K to 25 mK and their application as thermometers in this region is confirmed. For the 82 Ω resistor, measurements were taken at temperatures below 10mK. The temperature dependence of the resistance was found to be linear on the log-log plot over a wide range below 50 mK. The sensitivity remains finite even at 6 mK, but below 10 mK rapid measurements were prevented by a considerable increase in the thermal relaxation time. Measurement of the characteristics of several 100 Ω resistors from two different sets showed that resistors from the same set separate into two groups with different characteristics. This become appreciable at temperatures below 4.2 K, so it is difficult to predict the behaviour of Matsushite resistors below 4.2 K from the characteristics at higher temperatures. (author)

  20. Improving the transient response of a bolt-clamped Langevin transducer using a parallel resistor.

    Science.gov (United States)

    Chang, Kuo Tsi

    2003-08-01

    This paper suggests a parallel resistor to reduce DC time constant and DC response time of the transient response, induced immediately after an AC voltage connected to a bolt-clamped Langevin transducer (BLT) is switched off. An equivalent circuit is first expressed. Then, an open-circuit transient response at the terminals induced by initial states is derived and measured, and thus parameters for losses of the BLT device are estimated by DC and AC time constants of the transient response. Moreover, a driving and measuring system is designed to determine transient response and steady-state responses of the BLT device, and a parallel resistor is connected to the BLT device to reduce the DC time constant. Experimental results indicate that the DC time constant greatly exceeds the AC time constant without the parallel resistor, and greatly decreases from 42 to 1 ms by a 100-kOmega parallel resistor.

  1. Split-cross-bridge resistor for testing for proper fabrication of integrated circuits

    Science.gov (United States)

    Buehler, M. G. (Inventor)

    1985-01-01

    An electrical testing structure and method is described whereby a test structure is fabricated on a large scale integrated circuit wafer along with the circuit components and has a van der Pauw cross resistor in conjunction with a bridge resistor and a split bridge resistor, the latter having two channels each a line width wide, corresponding to the line width of the wafer circuit components, and with the two channels separated by a space equal to the line spacing of the wafer circuit components. The testing structure has associated voltage and current contact pads arranged in a two by four array for conveniently passing currents through the test structure and measuring voltages at appropriate points to calculate the sheet resistance, line width, line spacing, and line pitch of the circuit components on the wafer electrically.

  2. Using an expiratory resistor, arterial pulse pressure variations predict fluid responsiveness during spontaneous breathing: an experimental porcine study.

    Science.gov (United States)

    Dahl, Michael K; Vistisen, Simon T; Koefoed-Nielsen, Jacob; Larsson, Anders

    2009-01-01

    Fluid responsiveness prediction is difficult in spontaneously breathing patients. Because the swings in intrathoracic pressure are minor during spontaneous breathing, dynamic parameters like pulse pressure variation (PPV) and systolic pressure variation (SPV) are usually small. We hypothesized that during spontaneous breathing, inspiratory and/or expiratory resistors could induce high arterial pressure variations at hypovolemia and low variations at normovolemia and hypervolemia. Furthermore, we hypothesized that SPV and PPV could predict fluid responsiveness under these conditions. Eight prone, anesthetized and spontaneously breathing pigs (20 to 25 kg) were subjected to a sequence of 30% hypovolemia, normovolemia, and 20% and 40% hypervolemia. At each volemic level, the pigs breathed in a randomized order either through an inspiratory and/or an expiratory threshold resistor (7.5 cmH2O) or only through the tracheal tube without any resistor. Hemodynamic and respiratory variables were measured during the breathing modes. Fluid responsiveness was defined as a 15% increase in stroke volume (DeltaSV) following fluid loading. Stroke volume was significantly lower at hypovolemia compared with normovolemia, but no differences were found between normovolemia and 20% or 40% hypervolemia. Compared with breathing through no resistor, SPV was magnified by all resistors at hypovolemia whereas there were no changes at normovolemia and hypervolemia. PPV was magnified by the inspiratory resistor and the combined inspiratory and expiratory resistor. Regression analysis of SPV or PPV versus DeltaSV showed the highest R2 (0.83 for SPV and 0.52 for PPV) when the expiratory resistor was applied. The corresponding sensitivity and specificity for prediction of fluid responsiveness were 100% and 100%, respectively, for SPV and 100% and 81%, respectively, for PPV. Inspiratory and/or expiratory threshold resistors magnified SPV and PPV in spontaneously breathing pigs during hypovolemia

  3. Advanced ceramic composite for high energy resistors. Characterization of electrical and physical properties

    International Nuclear Information System (INIS)

    Farrokh, Fattahi; Navid, Tagizadegan; Naser, Tabatabaei

    2005-01-01

    Full text : There is a need to characterize and apply advanced materials to improve the performance of components used in pulse power systems. One area for innovation is the use of bulk electrically conductive ceramics for non-inductive, high energy and high power electrical resistors. Standard Ceramics, Inc. has developed a unique silicon carbide structural ceramic composite which exhibits electrical conductivity. The new conductive bulk ceramic material has a controlled microstructure, which results an improved homogeneity, making the material suitable for use as a non-inductive, high energy resistor. The new material has higher density, highee peak of temperature limit and greater physical strength compared with bulk ceramics currently used for pulsed power resistors. This paper describes characterization of the material's physical and electrical properties and relates them to improvements in low-power density, as compared to existing components would be expected and derived from specific properties such as good thermal conductivity, high strength, thermal shock resistance and high temperature capability. The bulk resistor approach that weas proposed offers high reliability through better mechanical properties and simplicity of construction

  4. Architecture design of resistor/FET-logic demultiplexer for hybrid CMOS/nanodevice circuit interconnect

    Energy Technology Data Exchange (ETDEWEB)

    Li Shu; Zhang Tong [Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180 (United States)], E-mail: lis4@rpi.edu, E-mail: tzhang@ecse.rpi.edu

    2008-05-07

    Hybrid nanoelectronics consisting of nanodevice crossbars on top of CMOS backplane circuits is emerging as one viable option to sustain Moore's law after the CMOS scaling limit is reached. One main design challenge in such hybrid nanoelectronics is the interface between the highly dense nanowires in nanodevice crossbars and relatively coarse microwires in the CMOS domain. Such an interface can be realized through a logic circuit called a demultiplexer (demux). In this context, all the prior work on demux design uses a single type of device, such as resistor, diode or field effect transistor (FET), to realize the demultiplexing function. However, different types of devices have their own advantages and disadvantages in terms of functionality, manufacturability, speed and power consumption. This makes none of them provide a satisfactory solution. To tackle this challenge, this work proposes to combine resistor with FET to implement the demux, leading to the hybrid resistor/FET-logic demux. Such hybrid demux architecture can make these two types of devices complement each other well to improve the overall demux design effectiveness. Furthermore, due to the inevitable fabrication process variations at the nanoscale, the effects of resistor conductance and FET threshold voltage variability are analyzed and evaluated based on computer simulations. The simulation results provide the requirement on the fabrication process to ensure a high demux reliability, and promise the hybrid resistor/FET-logic demux an improved addressability and process variance tolerance.

  5. Architecture design of resistor/FET-logic demultiplexer for hybrid CMOS/nanodevice circuit interconnect.

    Science.gov (United States)

    Li, Shu; Zhang, Tong

    2008-05-07

    Hybrid nanoelectronics consisting of nanodevice crossbars on top of CMOS backplane circuits is emerging as one viable option to sustain Moore's law after the CMOS scaling limit is reached. One main design challenge in such hybrid nanoelectronics is the interface between the highly dense nanowires in nanodevice crossbars and relatively coarse microwires in the CMOS domain. Such an interface can be realized through a logic circuit called a demultiplexer (demux). In this context, all the prior work on demux design uses a single type of device, such as resistor, diode or field effect transistor (FET), to realize the demultiplexing function. However, different types of devices have their own advantages and disadvantages in terms of functionality, manufacturability, speed and power consumption. This makes none of them provide a satisfactory solution. To tackle this challenge, this work proposes to combine resistor with FET to implement the demux, leading to the hybrid resistor/FET-logic demux. Such hybrid demux architecture can make these two types of devices complement each other well to improve the overall demux design effectiveness. Furthermore, due to the inevitable fabrication process variations at the nanoscale, the effects of resistor conductance and FET threshold voltage variability are analyzed and evaluated based on computer simulations. The simulation results provide the requirement on the fabrication process to ensure a high demux reliability, and promise the hybrid resistor/FET-logic demux an improved addressability and process variance tolerance.

  6. Architecture design of resistor/FET-logic demultiplexer for hybrid CMOS/nanodevice circuit interconnect

    International Nuclear Information System (INIS)

    Li Shu; Zhang Tong

    2008-01-01

    Hybrid nanoelectronics consisting of nanodevice crossbars on top of CMOS backplane circuits is emerging as one viable option to sustain Moore's law after the CMOS scaling limit is reached. One main design challenge in such hybrid nanoelectronics is the interface between the highly dense nanowires in nanodevice crossbars and relatively coarse microwires in the CMOS domain. Such an interface can be realized through a logic circuit called a demultiplexer (demux). In this context, all the prior work on demux design uses a single type of device, such as resistor, diode or field effect transistor (FET), to realize the demultiplexing function. However, different types of devices have their own advantages and disadvantages in terms of functionality, manufacturability, speed and power consumption. This makes none of them provide a satisfactory solution. To tackle this challenge, this work proposes to combine resistor with FET to implement the demux, leading to the hybrid resistor/FET-logic demux. Such hybrid demux architecture can make these two types of devices complement each other well to improve the overall demux design effectiveness. Furthermore, due to the inevitable fabrication process variations at the nanoscale, the effects of resistor conductance and FET threshold voltage variability are analyzed and evaluated based on computer simulations. The simulation results provide the requirement on the fabrication process to ensure a high demux reliability, and promise the hybrid resistor/FET-logic demux an improved addressability and process variance tolerance

  7. Thermometric characteristics of some 1/8W carbon resistors in the millikelvin range

    International Nuclear Information System (INIS)

    Radebaugh, R.; Holste, J.C.; Siegwarth, J.D.

    1974-01-01

    Gotch and Awano (Cryogenic Engineering (Tokyo); 8:18 (1973)) have reported on the useful characteristics of 1/8W 100Ω Matsushita carbon resistors (grade ERC-18GK) as thermometers for the region 0.4K and 4.2K. Measurements on the resistance characteristics of this grade of resistors from 11mK to 1K are reported here. Nominal resistances of 56Ω, 68Ω, 82Ω, 100Ω, and 220Ω have been measured. It is found that the 56Ω, 68Ω and 82 Ω resistors make useful thermometers down to at least 11mK. A comparison of the resistance behaviour of units immersed in dilute He 3 -He 4 with those outside the liquid is also made. (author)

  8. Physical Analysis of an Electric Resistor Heating

    Science.gov (United States)

    Perea Martins, J. E. M.

    2018-01-01

    This work describes a simple experiment to measure the resistor temperature as a function of the applied power and proves that it is an efficient way to introduce some important physical concepts in classroom, including the Joule's first law, hot-spot temperature, thermal resistance, thermal dissipation constant, time constant and the Newton's law…

  9. Novel charge sensitive preamplifier without high-value feedback resistor

    International Nuclear Information System (INIS)

    Xi Deming

    1992-01-01

    A novel charge sensitive preamplifier is introduced. The method of removing the high value feedback resistor, the circuit design and analysis are described. A practical circuit and its measured performances are provided

  10. Electrical Switching of Perovskite Thin-Film Resistors

    Science.gov (United States)

    Liu, Shangqing; Wu, Juan; Ignatiev, Alex

    2010-01-01

    Electronic devices that exploit electrical switching of physical properties of thin films of perovskite materials (especially colossal magnetoresistive materials) have been invented. Unlike some related prior devices, these devices function at room temperature and do not depend on externally applied magnetic fields. Devices of this type can be designed to function as sensors (exhibiting varying electrical resistance in response to varying temperature, magnetic field, electric field, and/or mechanical pressure) and as elements of electronic memories. The underlying principle is that the application of one or more short electrical pulse(s) can induce a reversible, irreversible, or partly reversible change in the electrical, thermal, mechanical, and magnetic properties of a thin perovskite film. The energy in the pulse must be large enough to induce the desired change but not so large as to destroy the film. Depending on the requirements of a specific application, the pulse(s) can have any of a large variety of waveforms (e.g., square, triangular, or sine) and be of positive, negative, or alternating polarity. In some applications, it could be necessary to use multiple pulses to induce successive incremental physical changes. In one class of applications, electrical pulses of suitable shapes, sizes, and polarities are applied to vary the detection sensitivities of sensors. Another class of applications arises in electronic circuits in which certain resistance values are required to be variable: Incorporating the affected resistors into devices of the present type makes it possible to control their resistances electrically over wide ranges, and the lifetimes of electrically variable resistors exceed those of conventional mechanically variable resistors. Another and potentially the most important class of applications is that of resistance-based nonvolatile-memory devices, such as a resistance random access memory (RRAM) described in the immediately following article

  11. Resistor trimming geometry; past, present and future

    International Nuclear Information System (INIS)

    Alafogianni, M; Penlington, R; Birkett, M

    2016-01-01

    This paper explores the key developments in thin film resistive trimming geometry for use in the fabrication of discrete precision resistors. Firstly an introduction to the laser trimming process is given with respect to well established trim geometries such as the plunge, 'L' and serpentine cuts. The effect of these trim patterns on key electrical properties of resistance tolerance and temperature co-efficient of resistance (TCR) of the thin films is then discussed before the performance of more recent geometries such as the three-contact and random trim approaches are reviewed. In addition to the properties of the standard trim patterns, the concept of the heat affected zone (HAZ) and ablation energy and the effect of introducing a 'fine' trim in areas of low current density to improve device performance are also studied. It is shown how trimming geometry and laser parameters can be systematically controlled to produce thin film resistors of the required properties for varying applications such as high precision, long term stability and high power pulse performance

  12. Diffraction phase microscopy imaging and multi-physics modeling of the nanoscale thermal expansion of a suspended resistor.

    Science.gov (United States)

    Wang, Xiaozhen; Lu, Tianjian; Yu, Xin; Jin, Jian-Ming; Goddard, Lynford L

    2017-07-04

    We studied the nanoscale thermal expansion of a suspended resistor both theoretically and experimentally and obtained consistent results. In the theoretical analysis, we used a three-dimensional coupled electrical-thermal-mechanical simulation and obtained the temperature and displacement field of the suspended resistor under a direct current (DC) input voltage. In the experiment, we recorded a sequence of images of the axial thermal expansion of the central bridge region of the suspended resistor at a rate of 1.8 frames/s by using epi-illumination diffraction phase microscopy (epi-DPM). This method accurately measured nanometer level relative height changes of the resistor in a temporally and spatially resolved manner. Upon application of a 2 V step in voltage, the resistor exhibited a steady-state increase in resistance of 1.14 Ω and in relative height of 3.5 nm, which agreed reasonably well with the predicted values of 1.08 Ω and 4.4 nm, respectively.

  13. History of resistor array infrared projectors: hindsight is always 100% operability

    Science.gov (United States)

    Williams, Owen M.; Goldsmith, George C., II; Stockbridge, Robert G.

    2005-05-01

    Numerous infrared scene projection technologies have been investigated since the 1970s. Notably, from the late 1980s the development of the first resistor array infrared projectors gained leverage from the strong concurrent developments within focal plane array imaging technology, linked by the common need for large integrated circuits comprising a 2-dimensional array of interconnected unit cells. In the resistor array case, it is the unit cell comprising the resistively heated emitter and its dedicated drive circuit that determines the projector response to its associated scene generator commands. In this paper we review the development of resistor array technology from a historical perspective, concentrating on the unit cell developments. We commence by describing the technological innovations that forged the way, sharing along the way stories of the successes and failures, all of which contributed to the steady if somewhat eventful growth of the critical knowledge base that underpins the strength of today's array technology. We conclude with comments on the characteristics and limitations of the technology and on the prospects for future array development.

  14. Passive Resistor Temperature Compensation for a High-Temperature Piezoresistive Pressure Sensor.

    Science.gov (United States)

    Yao, Zong; Liang, Ting; Jia, Pinggang; Hong, Yingping; Qi, Lei; Lei, Cheng; Zhang, Bin; Li, Wangwang; Zhang, Diya; Xiong, Jijun

    2016-07-22

    The main limitation of high-temperature piezoresistive pressure sensors is the variation of output voltage with operating temperature, which seriously reduces their measurement accuracy. This paper presents a passive resistor temperature compensation technique whose parameters are calculated using differential equations. Unlike traditional experiential arithmetic, the differential equations are independent of the parameter deviation among the piezoresistors of the microelectromechanical pressure sensor and the residual stress caused by the fabrication process or a mismatch in the thermal expansion coefficients. The differential equations are solved using calibration data from uncompensated high-temperature piezoresistive pressure sensors. Tests conducted on the calibrated equipment at various temperatures and pressures show that the passive resistor temperature compensation produces a remarkable effect. Additionally, a high-temperature signal-conditioning circuit is used to improve the output sensitivity of the sensor, which can be reduced by the temperature compensation. Compared to traditional experiential arithmetic, the proposed passive resistor temperature compensation technique exhibits less temperature drift and is expected to be highly applicable for pressure measurements in harsh environments with large temperature variations.

  15. Measurement of small ion beams by thermal ionisation mass spectrometry using new 1013 Ohm resistors

    International Nuclear Information System (INIS)

    Koornneef, J.M.; Bouman, C.; Schwieters, J.B.; Davies, G.R.

    2014-01-01

    Highlights: • First data are presented using 10 13 Ohm resistors connected to Faraday collectors. • 5 prototype 10 13 Ohm resistors were installed in a TRITON-Plus TIMS. • Performance was tested by measuring Sr and Nd isotope ratios on  13 Ohm resistors perform better than ion counting and 10 11 Ohm resistors. • Fourth decimal variability can be resolved for Nd isotope ratios on 10 pg samples. - Abstract: We tested 5 newly manufactured – prototype – 10 13 Ohm resistors in the feedback loop of Faraday cup amplifiers to measure small ion beams by Thermal Ionisation Mass Spectrometry (TIMS). The high Ohmic resistors installed in the TRITON Plus at the VU University Amsterdam theoretically have 10 times lower noise levels relative to the default 10 11 Ohm resistors. To investigate the precision and accuracy of analyses using these new amplifiers we measured Sr and Nd isotopes of reference standards at a range of ion currents (3.2 × 10 −16 to 1 × 10 −12 A, corresponding to intensities of 32 μV to 100 mV on a default 10 11 Ohm amplifier) and on small amounts of material (100 and 10 pg). Internal precision and external reproducibility for Sr and Nd isotope ratios are both better when collected on 10 13 compared 10 12 Ohm resistors and to the default 10 11 Ohm resistors. At an 87 Sr ion current of 3 × 10 −14 A (3 mV on a 10 11 Ohm amplifier) the internal precision (2 SE) of 87 Sr/ 86 Sr is 5 times better for 10 13 Ohm resistors compared to 10 11 Ohm resistors. The external reproducibility (2 SD) at this beam intensity is 9 times better. Multiple 100 and 10 pg Sr standards, ran to exhaustion, yielded low 87 Sr/ 86 Sr compared to the long term average (e.g. 10 pg average = 0.710083 ± 164 (n = 11) instead of 0.710244 ± 12, n = 73). The average off-set for 10 pg standards can be explained by a loading blank contribution of 1.3 pg. In contrast, Nd data on 100 pg and 10 pg samples are accurate suggesting that Nd loading blanks do not compromise the

  16. Physical analysis of an electric resistor heating

    Science.gov (United States)

    Perea Martins, J. E. M.

    2018-05-01

    This work describes a simple experiment to measure the resistor temperature as a function of the applied power and proves that it is an efficient way to introduce some important physical concepts in classroom, including the Joule’s first law, hot-spot temperature, thermal resistance, thermal dissipation constant, time constant and the Newton’s law of cooling.

  17. Conductivity of a square-lattice bond-mixed resistor network

    International Nuclear Information System (INIS)

    Costa, U.M.S.; Tsallis, C.; Schwaccheim, G.

    1985-01-01

    Within a real-space renormalization-group framework based on self-dual clusters, the conductivity of a square-lattice quenched bond-random resistor network is calculated, the conductance on each bond being g 1 or g 2 with probabilities (1-p) and p respectively. The group recovers several already known exact results (including slopes), and is consequently believed to be numerically quite reliable for almost all values of p, and all ratios g 1 /g 2 (in particular, g 1 =0 and g 1 =infinite with finite g 2 respectively correspond to the insulator-resitor and superconductor-resistor mixtures). In addition to that, an heuristic analytic expression is proposed for the conductivity which is believed to be a quite satisfactory approximation everywhere not too close to the percolation point. (Author) [pt

  18. Ultra-high-ohmic microstripline resistors for Coulomb blockade devices

    International Nuclear Information System (INIS)

    Lotkhov, Sergey V

    2013-01-01

    In this paper, we report on the fabrication and low-temperature characterization of ultra-high-ohmic microstripline resistors made of a thin film of weakly oxidized titanium. Nearly linear voltage–current characteristics were measured at temperatures down to T ∼ 20 mK for films with sheet resistivities as high as ∼7 kΩ, i.e. about an order of magnitude higher than our previous findings for weakly oxidized Cr. Our analysis indicates that such an improvement can help to create an advantageous high-impedance environment for different Coulomb blockade devices. Further properties of the Ti film addressed in this work show the promise of low-noise behavior of the resistors when applied in different realizations of the quantum standard of current. (paper)

  19. Resistor Networks based on Symmetrical Polytopes

    Directory of Open Access Journals (Sweden)

    Jeremy Moody

    2015-03-01

    Full Text Available This paper shows how a method developed by Van Steenwijk can be generalized to calculate the resistance between any two vertices of a symmetrical polytope all of whose edges are identical resistors. The method is applied to a number of cases that have not been studied earlier such as the Archimedean polyhedra and their duals in three dimensions, the regular polytopes in four dimensions and the hypercube in any number of dimensions.

  20. Test of the Starling resistor model in the human upper airway during sleep.

    Science.gov (United States)

    Wellman, Andrew; Genta, Pedro R; Owens, Robert L; Edwards, Bradley A; Sands, Scott A; Loring, Stephen H; White, David P; Jackson, Andrew C; Pedersen, Ole F; Butler, James P

    2014-12-15

    The human pharyngeal airway during sleep is conventionally modeled as a Starling resistor. However, inspiratory flow often decreases with increasing effort (negative effort dependence, NED) rather than remaining fixed as predicted by the Starling resistor model. In this study, we tested a major prediction of the Starling resistor model--that the resistance of the airway upstream from the site of collapse remains fixed during flow limitation. During flow limitation in 24 patients with sleep apnea, resistance at several points along the pharyngeal airway was measured using a pressure catheter with multiple sensors. Resistance between the nose and the site of collapse (the upstream segment) was measured before and after the onset of flow limitation to determine whether the upstream dimensions remained fixed (as predicted by the Starling resistor model) or narrowed (a violation of the Starling resistor model). The upstream resistance from early to mid inspiration increased considerably during flow limitation (by 35 ± 41 cmH2O · liter(-1) · s(-1), P < 0.001). However, there was a wide range of variability between patients, and the increase in upstream resistance was strongly correlated with the amount of NED (r = 0.75, P < 0.001). Therefore, patients with little NED exhibited little upstream narrowing (consistent with the Starling model), and patients with large NED exhibited large upstream narrowing (inconsistent with the Starling model). These findings support the idea that there is not a single model of pharyngeal collapse, but rather that different mechanisms may dominate in different patients. These differences could potentially be exploited for treatment selection. Copyright © 2014 the American Physiological Society.

  1. Process for obtaining multiple sheet resistances for thin film hybrid microcircuit resistors

    International Nuclear Information System (INIS)

    Norwood, D.P.

    1989-01-01

    A standard thin film circuit containing Ta/sub 2/N (100 ohms/square) resistors is fabricated by depositing on a dielectric substrate successive layers of Ta/sub 2/N, Ti and Pd, with a gold layer to provide conductors. The addition of a few simple photoprocessing steps to the standard TFN manufacturing process enables the formation of Ta/sub 2/N + Ti (10 ohms/square) and Ta/sub 2/N + Ti + Pd (1 ohm/square) resistors in the same otherwise standard thin film circuit structure

  2. Transport behaviour of commercially available 100-Omega standard resistors

    CSIR Research Space (South Africa)

    Schumacher, B

    2001-04-01

    Full Text Available Several types of commercial 100-Omega resistors can be used with the cryogenic current comparator to maintain the resistance unit, derived from the Quantized Hall Effect (QHE), and to disseminate this unit to laboratory resistance standards. Up...

  3. Modeling of three-dimensional diffusible resistors with the one-dimensional tube multiplexing method

    International Nuclear Information System (INIS)

    Gillet, Jean-Numa; Degorce, Jean-Yves; Meunier, Michel

    2009-01-01

    Electronic-behavior modeling of three-dimensional (3D) p + -π-p + and n + -ν-n + semiconducting diffusible devices with highly accurate resistances for the design of analog resistors, which are compatible with the CMOS (complementary-metal-oxide-semiconductor) technologies, is performed in three dimensions with the fast tube multiplexing method (TMM). The current–voltage (I–V) curve of a silicon device is usually computed with traditional device simulators of technology computer-aided design (TCAD) based on the finite-element method (FEM). However, for the design of 3D p + -π-p + and n + -ν-n + diffusible resistors, they show a high computational cost and convergence that may fail with fully non-separable 3D dopant concentration profiles as observed in many diffusible resistors resulting from laser trimming. These problems are avoided with the proposed TMM, which divides the 3D resistor into one-dimensional (1D) thin tubes with longitudinal axes following the main orientation of the average electrical field in the tubes. The I–V curve is rapidly obtained for a device with a realistic 3D dopant profile, since a system of three first-order ordinary differential equations has to be solved for each 1D multiplexed tube with the TMM instead of three second-order partial differential equations in the traditional TCADs. Simulations with the TMM are successfully compared to experimental results from silicon-based 3D resistors fabricated by laser-induced dopant diffusion in the gaps of MOSFETs (metal-oxide-semiconductor field-effect transistors) without initial gate. Using thin tubes with other shapes than parallelepipeds as ring segments with toroidal lateral surfaces, the TMM can be generalized to electronic devices with other types of 3D diffusible microstructures

  4. Au/Ti resistors used for Nb/Pb-alloy Josephson junctions. I. Electrical stability

    International Nuclear Information System (INIS)

    Murakami, M.; Alessandrini, E.I.; Kim, K.K.

    1984-01-01

    Bilayered Au/Ti films are very attractive for use as resistor materials of experimental Nb/Pb-alloy Josephson junction devices. In order to predict the electrical stability of the Au/Ti resistors during storage at room temperature, changes in microstructure and electrical resistivity of Ti and Au/Ti films during isothermal annealing at temperatures ranging from 298--473 K were studied using transmission electron microscopy, x-ray diffraction, and electrical measurements. Growth of Ti grains during annealing was observed in these films. The activation energy for the grain growth was determined to be 1.51 eV. Decreases in the sheet resistance measured at 4.2 K were observed at the early stages of isothermal annealing. By analyzing the annealing temperature dependence of rates of resistance changes, the activation energy of 1.49 eV was obtained. This energy value is very close to that obtained for the grain growth and, therefore, one of the main causes in the resistance decrease is believed to be due to the growth of Ti grains. Based on the present results, a model to predict the electrical resistance change for the Au/Ti films during storage at room temperature was established. The model predicted that change in the resistance can be significantly reduced by preannealing the resistors at an elevated temperature. The prediction was supported by the experiment and an excellent quantitative agreement between measured resistance values and those predicted by the model was obtained. Based on this model, the change was predicted to be -1.5% after about 3 years at room temperature, if the resistors were preannealed at 353 K for 10 h. This resistor stability is satisfactory for designing logic and memory circuits of Josephson devices, and it can be increased simply by preannealing for longer times at 353 K

  5. Technical-economic evaluation of the utilization of closing resistor in CEMIG extra-high voltage circuit breakers

    Energy Technology Data Exchange (ETDEWEB)

    Rocha, Angelica C.O.; Pinto, Roberto del Giudice R.; Teixeira, Jose Cleber; Fonseca, Rodrigo Assuncao; F, Junior, Sebastiao V [Companhia Energetica de Minas Gerais (CEMIG), Belo Horizonte, MG (Brazil)

    1994-12-31

    This paper presents the technical and economic studies performed by CEMIG, Companhia Energetica de Minas Gerais, Brazil, concerning the use of closing resistor in its extra-high voltage (EHV) breakers. The analysis emphasizes the advantages which could be achieved with the elimination of the resistor as far as costs and reliability are concerned. This evaluation was motivated by two 500 kV breaker failures resulting from the breakdown of the closing resistor operation mechanism. These occurrences resulted in operative restriction for CEMIG EHV system. The analysis demanded a review of the capability criteria of silicon carbide (Si C) gap arresters, which are still greatly used in CEMIG EHV System, and of the procedures to be applied when carrying out the transient studies. The investigation resulted in the prompt removal of closing resistors from circuit breakers in CEMIG extra-high voltage system generating an economy of approximately U$ 840,00 and an improvement in safety and system reliability. (author) 13 refs., 4 figs., 1 tab.

  6. Flexible and twistable non-volatile memory cell array with all-organic one diode-one resistor architecture.

    Science.gov (United States)

    Ji, Yongsung; Zeigler, David F; Lee, Dong Su; Choi, Hyejung; Jen, Alex K-Y; Ko, Heung Cho; Kim, Tae-Wook

    2013-01-01

    Flexible organic memory devices are one of the integral components for future flexible organic electronics. However, high-density all-organic memory cell arrays on malleable substrates without cross-talk have not been demonstrated because of difficulties in their fabrication and relatively poor performances to date. Here we demonstrate the first flexible all-organic 64-bit memory cell array possessing one diode-one resistor architectures. Our all-organic one diode-one resistor cell exhibits excellent rewritable switching characteristics, even during and after harsh physical stresses. The write-read-erase-read output sequence of the cells perfectly correspond to the external pulse signal regardless of substrate deformation. The one diode-one resistor cell array is clearly addressed at the specified cells and encoded letters based on the standard ASCII character code. Our study on integrated organic memory cell arrays suggests that the all-organic one diode-one resistor cell architecture is suitable for high-density flexible organic memory applications in the future.

  7. Novel method for fabrication of integrated resistors on bilayer Ag/YBa2Cu3O7 films using Ni implantation

    International Nuclear Information System (INIS)

    LaGraff, J.R.; Chan, H.; Murduck, J.M.; Hong, S.H.; Ma, Q.Y.

    1997-01-01

    A novel ion implantation method is described for fabricating low inductance integrated resistors on Ag/YBa 2 Cu 3 O 7 (YBCO) bilayer thin films. Parallel high and low value resistors were simultaneously formed by patterning bilayer films into 10-μm-wide lines, then masking and implanting with Ni to selectively inhibit superconductivity in YBCO. Low value resistors (<1Ω/sq) were formed at 77 K as the supercurrent bypassed the Ni-doped nonsuperconducting YBCO and was shunted through the overlying low resistivity Ag metal. High value resistors (20 - 140 Ω/sq) were formed by removing Ag from above the implanted YBCO forcing the current through the implanted YBCO region. The sheet resistance of both types of resistors was found to increase systematically with increasing Ni implant energy. copyright 1997 American Institute of Physics

  8. Electrochemical, morphological and microstructural characterization of carbon film resistor electrodes for application in electrochemical sensors

    International Nuclear Information System (INIS)

    Gouveia-Caridade, Carla; Soares, David M.; Liess, Hans-Dieter; Brett, Christopher M.A.

    2008-01-01

    The electrochemical and microstructural properties of carbon film electrodes made from carbon film electrical resistors of 1.5, 15, 140 Ω and 2.0 kΩ nominal resistance have been investigated before and after electrochemical pre-treatment at +0.9 V vs SCE, in order to assess the potential use of these carbon film electrodes as electrochemical sensors and as substrates for sensors and biosensors. The results obtained are compared with those at electrodes made from previously investigated 2 Ω carbon film resistors. Cyclic voltammetry was performed in acetate buffer and phosphate buffer saline electrolytes and the kinetic parameters of the model redox system Fe(CN) 6 3-/4- obtained. The 1.5 Ω resistor electrodes show the best properties for sensor development with wide potential windows, similar electrochemical behaviour to those of 2 Ω and close-to-reversible kinetic parameters after electrochemical pre-treatment. The 15 and 140 Ω resistor electrodes show wide potential windows although with slower kinetics, whereas the 2.0 kΩ resistor electrodes show poor cyclic voltammetric profiles even after pre-treatment. Electrochemical impedance spectroscopy related these findings to the interfacial properties of the electrodes. Microstructural and morphological studies were carried out using contact mode Atomic Force Microscopy (AFM), Confocal Raman spectroscopy and X-ray diffraction. AFM showed more homogeneity of the films with lower nominal resistances, related to better electrochemical characteristics. X-ray diffraction and Confocal Raman spectroscopy indicate the existence of a graphitic structure in the carbon films

  9. Intermittency-induced criticality in a resistor-inductor-diode circuit.

    Science.gov (United States)

    Potirakis, Stelios M; Contoyiannis, Yiannis; Diakonos, Fotios K; Hanias, Michael P

    2017-04-01

    The current fluctuations of a driven resistor-inductor-diode circuit are investigated here looking for signatures of critical behavior monitored by the driving frequency. The experimentally obtained time series of the voltage drop across the resistor (as directly proportional to the current flowing through the circuit) were analyzed by means of the method of critical fluctuations in analogy to thermal critical systems. Intermittent criticality was revealed for a critical frequency band signifying the transition between the normal rectifier phase in the low frequencies and a full-wave conducting, capacitorlike phase in the high frequencies. The transition possesses critical characteristics with a characteristic exponent p_{l}=1.65. A fractal analysis in terms of the rescale range (R/RSS) and detrended fluctuation analysis methods yielded results fully compatible with the critical dynamics analysis. Suggestions for the interpretation of the observed behavior in terms of p-n junction operation are discussed.

  10. A fully integrated, monolithic, cryogenic charge sensitive preamplifier using N-channel JFETs and polysilicon resistors

    International Nuclear Information System (INIS)

    Jung, T.S.; Guckel, H.; Seefeldt, J.; Ott, G.; Ahn, Y.C.

    1994-01-01

    In this paper, an integrated charge preamplifier to be used with small (10--30 mm 2 ) Si(Li) and Ge(Li) X-ray detectors is described. The preamplifier is designed to operate at cryogenic temperatures (∼100 K to 160 K) for the best performance. An N-channel JFET process technology for integrated charge sensitive preamplifiers has been developed. The process integrates multiple pinch-off voltage JFETs fabricated in an n-type epitaxial layer on a low resistivity p-type substrate. The process also incorporates polysilicon resistors integrated on the same die as the JFETs. The optimized polysilicon resistors exhibit 1/f noise nearly as good as metal film resistors at the same current. Results for integrated amplifier are discussed

  11. Multifractal properties of resistor diode percolation.

    Science.gov (United States)

    Stenull, Olaf; Janssen, Hans-Karl

    2002-03-01

    Focusing on multifractal properties we investigate electric transport on random resistor diode networks at the phase transition between the nonpercolating and the directed percolating phase. Building on first principles such as symmetries and relevance we derive a field theoretic Hamiltonian. Based on this Hamiltonian we determine the multifractal moments of the current distribution that are governed by a family of critical exponents [psi(l)]. We calculate the family [psi(l)] to two-loop order in a diagrammatic perturbation calculation augmented by renormalization group methods.

  12. Method of triggering the vacuum arc in source with a resistor

    International Nuclear Information System (INIS)

    Zheng Le; Lan Zhaohui; Long Jidong; Peng Yufei; Li Jie; Yang Zhen; Dong Pan; Shi Jinshui

    2014-01-01

    Background: The metal vapor vacuum arc (MEVVA) ion source is a common source which provides strong metal ion flow. To trigger this ion source, a high-voltage trigger pulse generator and a high-voltage isolation pulse transformer are needed, which makes the power supply system complex. Purpose: To simplify the power supply system, a trigger method with a resistor was introduced, and some characteristics of this method were studied. Methods: The ion flow provided by different main arc current was measured, as well as the trigger current. The main arc current and the ion current were recorded with different trigger resistances. Results: Experimental results showed that, within a certain range of resistances, the larger the resistance value, the more difficult it was to success fully trigger the source. Meanwhile, the main arc rising edge became slower on the increasing in the trigger time. However, the resistance value increment had hardly impact on the intensity of ion flow extracted in the end, The ion flow became stronger with the increasing main arc current. Conclusion: The power supply system of ion source is simplified by using the trigger method with a resistor. Only a suitable resistor was needed to complete the conversion process from trigger to arc initiating. (authors)

  13. A new computer-aided simulation model for polycrystalline silicon film resistors

    Science.gov (United States)

    Ching-Yuan Wu; Weng-Dah Ken

    1983-07-01

    A general transport theory for the I-V characteristics of a polycrystalline film resistor has been derived by including the effects of carrier degeneracy, majority-carrier thermionic-diffusion across the space charge regions produced by carrier trapping in the grain boundaries, and quantum mechanical tunneling through the grain boundaries. Based on the derived transport theory, a new conduction model for the electrical resistivity of polycrystalline film resitors has been developed by incorporating the effects of carrier trapping and dopant segregation in the grain boundaries. Moreover, an empirical formula for the coefficient of the dopant-segregation effects has been proposed, which enables us to predict the dependence of the electrical resistivity of phosphorus-and arsenic-doped polycrystalline silicon films on thermal annealing temperature. Phosphorus-doped polycrystalline silicon resistors have been fabricated by using ion-implantation with doses ranged from 1.6 × 10 11 to 5 × 10 15/cm 2. The dependence of the electrical resistivity on doping concentration and temperature have been measured and shown to be in good agreement with the results of computer simulations. In addition, computer simulations for boron-and arsenic-doped polycrystalline silicon resistors have also been performed and shown to be consistent with the experimental results published by previous authors.

  14. Continuously forced ballast resistor model for superconducting hot spots

    International Nuclear Information System (INIS)

    Ausloos, M.

    1981-01-01

    To neglect the Thomson effect in the ballast resistor theory is an incorrect assumption since it measures the velocity of the thermal grain boundaries. Due to the constant rate of heating or cooling, large oscillations are predicted in dR/dT near Tsub(c). (orig.)

  15. Advanced ceramic composite for high energy resistors : Characterization of electrical and physical properties

    International Nuclear Information System (INIS)

    Farrokh, Fattahi; Navid, Tagizadegan; Naser, Tabatabaei; Ahmad, Rashtehizadeh

    2005-01-01

    There is a need to characterize and apply advanced materials to improve the performance of components used in pulse power systems. One area for innovation is the use of bulk electrically conductive ceramics for non-inductive, high energy and high power electrical resistors. Standard Ceramics Inc. has developed a unique silicon carbide structural ceramic composite which exhibits electrical conductivity. The new, new, conductive, bulk ceramic material has a controlled microstructure, which results in improved homogeneity, making the material suitable for use as a non-inductive, high energy resistor

  16. Biphase sinusoidal oscillator based on negative resistor.

    Science.gov (United States)

    Bayard, Jean

    2010-06-01

    This paper describes a biphase sinusoidal generator which provides two signals: v(ref)=V(M) sin(omegat) and v(out)=V(M) sin(omegat+DeltaPhi), where DeltaPhi is in the range 0, pi/2 or -pi/2, 0 and is not dependent on the frequency value. It is based on a negative resistor and it requires very few components. SPICE simulations and measurements on an experimental setup confirm the theoretical analysis.

  17. Chemical interaction in resistors based on lead ruthenite with additions of niobium(5) oxide compounds

    International Nuclear Information System (INIS)

    Lozinskij, N.S.; Shevtsova, N.A.; Gruba, A.I.; Volkov, V.I.

    1986-01-01

    The method of X-ray phase analysis was used to study chemical interaction in isothermal cross-section of Pb 2 RU 2 O 6 -Nb 2 O 5 , Rbsub(2)Rusub(2)Osub(6)-NbWOsub(5.5) and Rb 2 Ru 2 O 6 -Pb 2 Nb 2 O 7 systems at 850 deg C as well as in models of real ruthenium resistors. Chemical interaction is stated to take place in systems with niobium (5) oxide and NbWOsub(5.5). Niobium (5) and tungsten (6) displace ruthenium (4) from its compounds with formation of their lead salts. Similar chemical interactions between current-carrying phase of the resistor and modifiers representing niobium-containing take place in models of components of the studied systems take place in models of resistors

  18. High-precision ID-TIMS zircon U-Pb geochronology using new 1013 Ohm resistors

    Science.gov (United States)

    Von Quadt, A.; Buret, Y.; Large, S.; Peytcheva, I.; Trinquier, A.; Wotzlaw, J. F.

    2015-12-01

    Faraday cups equipped with high gain amplifiers provide a means to measure small ion beams in static mode without the limited linear range of ion counting systems. We tested the application of newly available 1013 Ohm resistors to ID-TIMS zircon U-Pb geochronology using a range of natural and synthetic reference materials. The TritonPlus-RPQ at the Institute of Geochemistry and Petrology, ETH Zurich, is equipped with five new 1013 Ohm resistors and one MasCom secondary electron multiplier, allowing to measure the 202-204-205-206-207-208Pb masses in static mode. U is measured subsequently as U-oxide (265-267-270UO2) during a second step, also in static Faraday mode. The gain calibration of the 1013 Ohm resistors was performed using the procedure of Trinquier (2014), with 144Nd-146Nd being measured using 1011 Ohm resistor and 142-143-145-148-150Nd being measured using 1013 Ohm resitors (Trinquier, 2014; Koornneef et al., 2014). Standard deviations of the noise in all five new 1013 Ohm resistors are lower than 5.0 x 10-6 over a 6 month period, with no shift occurring over this time interval. This new detector set-up was tested by analyzing natural zircon standard materials and synthetic U/Pb solutions (www.earthime.org), ranging in age from ~2 Ma to ~600 Ma. All natural zircon standards were chemically abraded (Mattinson, 2005) and all samples were spiked with the ET2535 tracer solution. U-Pb dates obtained using the static measurement routine are compared to measurements employing dynamic peak jumping routines on the MasCom multiplier. This study illustrates the benefits and current limitations of using high gain amplifiers to measure small ion beams for zircon U-Pb geochronology compared to conventional dynamic ion counting techniques. Mattinson, J.M. (2005) Chemical Geology 220:47-66; Trinquier, A. (2014) Application Note 30281; Koornneef, J. et al (2014) Analytica Chimica Acta 819:49-55.

  19. Thermal resistor on the base of silicon and some polymer semiconductors

    International Nuclear Information System (INIS)

    Marupov, R.; Kasimov, Sh.T.; Achilov, T.Kh.; Karimov, Kh.S.; Akhmedov, Kh.M.

    1995-01-01

    The purpose of present work is investigation electrical properties ofthermal resistors which was made from second cast poly-crystal silicon,poly-carbazole, and compositions of poly-crystal silicon and poly-carbazole

  20. Measurement of small ion beams by thermal ionisation mass spectrometry using new 10(13) Ohm resistors.

    Science.gov (United States)

    Koornneef, J M; Bouman, C; Schwieters, J B; Davies, G R

    2014-03-28

    We tested 5 newly manufactured - prototype - 10(13)Ohm resistors in the feedback loop of Faraday cup amplifiers to measure small ion beams by Thermal Ionisation Mass Spectrometry (TIMS). The high Ohmic resistors installed in the TRITON Plus at the VU University Amsterdam theoretically have 10 times lower noise levels relative to the default 10(11)Ohm resistors. To investigate the precision and accuracy of analyses using these new amplifiers we measured Sr and Nd isotopes of reference standards at a range of ion currents (3.2×10(-16) to 1×10(-12) A, corresponding to intensities of 32 μV to 100 mV on a default 10(11)Ohm amplifier) and on small amounts of material (100 and 10 pg). Internal precision and external reproducibility for Sr and Nd isotope ratios are both better when collected on 10(13) compared 10(12)Ohm resistors and to the default 10(11)Ohm resistors. At an (87)Sr ion current of 3×10(-14) A (3 mV on a 10(11)Ohm amplifier) the internal precision (2 SE) of (87)Sr/(86)Sr is 5 times better for 10(13)Ohm resistors compared to 10(11)Ohm resistors. The external reproducibility (2 SD) at this beam intensity is 9 times better. Multiple 100 and 10 pg Sr standards, ran to exhaustion, yielded low (87)Sr/(86)Sr compared to the long term average (e.g. 10 pg average=0.710083±164 (n=11) instead of 0.710244±12, n=73). The average off-set for 10 pg standards can be explained by a loading blank contribution of 1.3 pg. In contrast, Nd data on 100 pg and 10 pg samples are accurate suggesting that Nd loading blanks do not compromise the data. The external reproducibility of (143)Nd/(144)Nd on 100 pg samples is 125 ppm and 3.3‰ on 10 pg samples (2 RSD=relative standard deviation, n=10). Thus, variability in Nd and Sr isotope ratios in the 4th decimal place, e.g. (143)Nd/(144)Nd 0.5110-0.5119 or (87)Sr/(86)Sr 0.7100-0.7109, can be resolved in 10 to 100 pg samples provided that the procedural blanks and chemical separation are optimal. For measurements in the beam

  1. A study on embedded resistor components fabricated by laser micro-cladding and rapid prototype

    International Nuclear Information System (INIS)

    Li Huiling; Zeng Xiaoyan

    2006-01-01

    With the rapid development of IC and packaging, electronic devices are required to be smaller, to have a high-density integration, to become multifunction and to be of lower cost and high-reliability. Thick-film technology is not able to meet the current developing demands because of its shortcomings, such as the limit of pattern resolution, the severe torsion and delay of high-speed signal transmission. The speed and quality of signal transmission will be improved if embedded resistor components are directly integrated in the multiplayer substrate of multi-chip or laminated module, and high-density integration and reliability are achieved because the short interconnection and the less soldering point. In this paper, a technique named laser micro-cladding and rapid prototype is used to directly fabricate embedded resistor units on the multiplayer ceramic substrate without using a mask and high-temperature sintering, and without trimming resistor, which will simplify processing and decrease cost as well as improving high-speed and reliable performance

  2. Design and fabrication of carbon nanotube field-emission cathode with coaxial gate and ballast resistor.

    Science.gov (United States)

    Sun, Yonghai; Yeow, John T W; Jaffray, David A

    2013-10-25

    A low density vertically aligned carbon nanotube-based field-emission cathode with a ballast resistor and coaxial gate is designed and fabricated. The ballast resistor can overcome the non-uniformity of the local field-enhancement factor at the emitter apex. The self-aligned fabrication process of the coaxial gate can avoid the effects of emitter tip misalignment and height non-uniformity. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Nanoporous carbon tunable resistor/transistor and methods of production thereof

    Science.gov (United States)

    Biener, Juergen; Baumann, Theodore F; Dasgupta, Subho; Hahn, Horst

    2014-04-22

    In one embodiment, a tunable resistor/transistor includes a porous material that is electrically coupled between a source electrode and a drain electrode, wherein the porous material acts as an active channel, an electrolyte solution saturating the active channel, the electrolyte solution being adapted for altering an electrical resistance of the active channel based on an applied electrochemical potential, wherein the active channel comprises nanoporous carbon arranged in a three-dimensional structure. In another embodiment, a method for forming the tunable resistor/transistor includes forming a source electrode, forming a drain electrode, and forming a monolithic nanoporous carbon material that acts as an active channel and selectively couples the source electrode to the drain electrode electrically. In any embodiment, the electrolyte solution saturating the nanoporous carbon active channel is adapted for altering an electrical resistance of the nanoporous carbon active channel based on an applied electrochemical potential.

  4. Dispersive dielectric and conductive effects in 2D resistor-capacitor networks.

    Science.gov (United States)

    Hamou, R F; Macdonald, J R; Tuncer, E

    2009-01-14

    How to predict and better understand the effective properties of disordered material mixtures has been a long-standing problem in different research fields, especially in condensed matter physics. In order to address this subject and achieve a better understanding of the frequency-dependent properties of these systems, a large 2D L × L square structure of resistors and capacitors was used to calculate the immittance response of a network formed by random filling of binary conductor/insulator phases with 1000 Ω resistors and 10 nF capacitors. The effects of percolating clusters on the immittance response were studied statistically through the generation of 10 000 different random network samples at the percolation threshold. The scattering of the imaginary part of the immittance near the dc limit shows a clear separation between the responses of percolating and non-percolating samples, with the gap between their distributions dependent on both network size and applied frequency. These results could be used to monitor connectivity in composite materials. The effects of the content and structure of the percolating path on the nature of the observed dispersion were investigated, with special attention paid to the geometrical fractal concept of the backbone and its influence on the behavior of relaxation-time distributions. For three different resistor-capacitor proportions, the appropriateness of many fitting models was investigated for modeling and analyzing individual resistor-capacitor network dispersed frequency responses using complex-nonlinear-least-squares fitting. Several remarkable new features were identified, including a useful duality relationship and the need for composite fitting models rather than either a simple power law or a single Davidson-Cole one. Good fits of data for fully percolating random networks required two dispersive fitting models in parallel or series, with a cutoff at short times of the distribution of relaxation times of one of

  5. Processing, microstructure, and electric properties of buried resistors in low-temperature co-fired ceramics

    International Nuclear Information System (INIS)

    Yang, Pin; Rodriguez, Mark A.; Kotula, Paul; Miera, Brandon K.; Dimos, Duane

    2001-01-01

    The electrical properties of ruthenium oxide based devitrifiable resistors embedded within low-temperature co-fired ceramics were investigated from -100 o C to 100 o C. Special attention was given to the processing conditions and their effects on resistance and temperature coefficient of resistance (TCR). Results indicate that within this temperature range the conductance for these buried resistors is limited by tunneling of charge carriers through the thin glass layer between ruthenium oxide particles. A modified version of the tunneling barrier model is proposed to account for the microstructure ripening observed during thermal processing. The model parameters determined from curve fitting show that charging energy (i.e., the energy required for a charge carrier to tunnel through the glass barrier) is strongly dependent on particle size and particle--particle separation between ruthenium oxide grains. Initial coarsening of ruthenium oxide grains was found to reduce the charging energy and lower the resistance. However, when extended ripening occurs, the increase in particle--particle separation increases the charging energy, reduces the tunneling probability and gives rise to a higher resistance. The tradeoff between these two effects results in an optimum microstructure with a minimum resistance and TCR. Furthermore, the TCR of these buried resistors has been shown to be governed by the magnitude of the charging energy. Model parameters determined by our analysis appear to provide quantitative physical interpretations to the microstructural changes in the resistor, which in turn, are controlled by the processing conditions

  6. Design, development and evaluation of a resistor-based multiplexing circuit for a 20×20 SiPM array

    International Nuclear Information System (INIS)

    Wang, Zhonghai; Sun, Xishan; Lou, Kai; Meier, Joseph; Zhou, Rong; Yang, Chaowen; Zhu, Xiaorong; Shao, Yiping

    2016-01-01

    One technical challenge in developing a large-size scintillator detector with multiple Silicon Photomultiplier (SiPM) arrays is to read out a large number of detector output channels. To achieve this, different signal multiplexing circuits have been studied and applied with different performances and cost-effective tradeoffs. Resistor-based multiplexing circuits exhibit simplicity and signal integrity, but also present the disadvantage of timing shift among different channels. In this study, a resistor-based multiplexing circuit for a large-sized SiPM array readout was developed and evaluated by simulation and experimental studies. Similarly to a multiplexing circuit used for multi-anode PMT, grounding and branching resistors were connected to each SiPM output channel. The grounding resistor was used to simultaneously reduce the signal crosstalk among different channels and to improve timing performance. Both grounding and branching resistor values were optimized to maintain a balanced performance of the event energy, timing, and positioning. A multiplexing circuit was implemented on a compact PCB and applied for a flat-panel detector which consisted of a 32×32 LYSO scintillator crystals optically coupled to 5×5 SiPM arrays for a total 20×20 output channels. Test results showed excellent crystal identification for all 1024 LYSO crystals (each with 2×2×30 mm"3 size) with "2"2Na flood-source irradiation. The measured peak-to-valley ratio from typical crystal map profile is around 3:1 to 6.6:1, an average single crystal energy resolution of about 17.3%, and an average single crystal timing resolution of about 2 ns. Timing shift among different crystals, as reported in some other resistor-based multiplexing circuit designs, was not observed. In summary, we have designed and implemented a practical resistor-based multiplexing circuit that can be readily applied for reading out a large SiPM array with good detector performance.

  7. Design, development and evaluation of a resistor-based multiplexing circuit for a 20×20 SiPM array

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Zhonghai [College of Physical Science and Technology, Key Laboratory of Radiation Physics and Technology, Ministry of Education, Sichuan University, Chengdu (China); Department of Radiation Oncology, University of Texas Southwestern Medical Center, Dallas, Tx (United States); Sun, Xishan [Department of Radiation Oncology, University of Texas Southwestern Medical Center, Dallas, Tx (United States); Lou, Kai [Department of Electrical and Computer Engineering, Rice University, Houston, Tx (United States); Meier, Joseph [Department of Imaging Physics, The University of Texas MD Anderson Cancer Center, Houston, Tx (United States); Zhou, Rong; Yang, Chaowen [College of Physical Science and Technology, Key Laboratory of Radiation Physics and Technology, Ministry of Education, Sichuan University, Chengdu (China); Zhu, Xiaorong [Department of Radiation Physics, The University of Texas MD Anderson Cancer Center, Houston, Tx (United States); Shao, Yiping [Department of Radiation Oncology, University of Texas Southwestern Medical Center, Dallas, Tx (United States)

    2016-04-21

    One technical challenge in developing a large-size scintillator detector with multiple Silicon Photomultiplier (SiPM) arrays is to read out a large number of detector output channels. To achieve this, different signal multiplexing circuits have been studied and applied with different performances and cost-effective tradeoffs. Resistor-based multiplexing circuits exhibit simplicity and signal integrity, but also present the disadvantage of timing shift among different channels. In this study, a resistor-based multiplexing circuit for a large-sized SiPM array readout was developed and evaluated by simulation and experimental studies. Similarly to a multiplexing circuit used for multi-anode PMT, grounding and branching resistors were connected to each SiPM output channel. The grounding resistor was used to simultaneously reduce the signal crosstalk among different channels and to improve timing performance. Both grounding and branching resistor values were optimized to maintain a balanced performance of the event energy, timing, and positioning. A multiplexing circuit was implemented on a compact PCB and applied for a flat-panel detector which consisted of a 32×32 LYSO scintillator crystals optically coupled to 5×5 SiPM arrays for a total 20×20 output channels. Test results showed excellent crystal identification for all 1024 LYSO crystals (each with 2×2×30 mm{sup 3} size) with {sup 22}Na flood-source irradiation. The measured peak-to-valley ratio from typical crystal map profile is around 3:1 to 6.6:1, an average single crystal energy resolution of about 17.3%, and an average single crystal timing resolution of about 2 ns. Timing shift among different crystals, as reported in some other resistor-based multiplexing circuit designs, was not observed. In summary, we have designed and implemented a practical resistor-based multiplexing circuit that can be readily applied for reading out a large SiPM array with good detector performance.

  8. Resistor Extends Life Of Battery In Clocked CMOS Circuit

    Science.gov (United States)

    Wells, George H., Jr.

    1991-01-01

    Addition of fixed resistor between battery and clocked complementary metal oxide/semiconductor (CMOS) circuit reduces current drawn from battery. Basic idea to minimize current drawn from battery by operating CMOS circuit at lowest possible current consistent with use of simple, fixed off-the-shelf components. Prolongs lives of batteries in such low-power CMOS circuits as watches and calculators.

  9. Single pole rapid reclosing: effective damping of ehv switching surges through discharge resistors

    Energy Technology Data Exchange (ETDEWEB)

    Heinemann, T

    1965-04-30

    The stability of interconnecting circuits is very important and loss of synchronism of a complete network due to a temporary single-phase fault is operationally and economically undesirable. The use of grounding resistors together with load-break isolators which can be electrically or mechanically coupled to the circuit-breakers yield interesting possibilities in extra-high-voltage networks. The three problems, i.e., discharging of charged lines, damping of switching surges, and single-pole rapid-reclosing, can be solved through the use of a number of similar resistors and load-break isolators connected in series according to the voltage. The thermal and electrical stresses of the resistors can be kept within permissible limits. The time required for arc extinction and the limits in respect of length of lines will have to be determined by actual tests. For single-pole rapid-reclosing during a single-phase earth fault the switching operations on both sides of the line must be simultaneous. Because of the very small divergence of the opening and making times of modern circuit-breakers it will be sufficient only to synchronise the operating impulse.

  10. Pyramidal resistor networks for electrical impedance tomography with partial boundary measurements

    International Nuclear Information System (INIS)

    Borcea, L; Mamonov, A V; Druskin, V; Vasquez, F Guevara

    2010-01-01

    We introduce an inversion algorithm for electrical impedance tomography (EIT) with partial boundary measurements in two dimensions. It gives stable and fast reconstructions using sparse parameterizations of the unknown conductivity on optimal grids that are computed as part of the inversion. We follow the approach in Borcea et al (2008 Inverse Problems 24 035013) and Vasquez (2006 PhD thesis Rice University, Houston, TX, USA) that connects inverse discrete problems for resistor networks to continuum EIT problems, using optimal grids. The algorithm in Borcea et al (2008 Inverse Problems 24 035013) and Vasquez (2006 PhD Thesis Rice University, Houston, TX, USA) is based on circular resistor networks, and solves the EIT problem with full boundary measurements. It is extended in Borcea et al (2010 Inverse Problems 26 045010) to EIT with partial boundary measurements, using extremal quasi-conformal mappings that transform the problem to one with full boundary measurements. Here we introduce a different class of optimal grids, based on resistor networks with pyramidal topology, that is better suited for the partial measurements setup. We prove the unique solvability of the discrete inverse problem for these networks and develop an algorithm for finding them from the measurements of the Dirichlet to Neumann map. Then, we show how to use the networks to define the optimal grids and to approximate the unknown conductivity. We assess the performance of our approach with numerical simulations and compare the results with those in Borcea et al (2010)

  11. Analyses of power output of piezoelectric energy-harvesting devices directly connected to a load resistor using a coupled piezoelectric-circuit finite element method.

    Science.gov (United States)

    Zhu, Meiling; Worthington, Emma; Njuguna, James

    2009-07-01

    This paper presents, for the first time, a coupled piezoelectric-circuit finite element model (CPC-FEM) to analyze the power output of a vibration-based piezoelectric energy-harvesting device (EHD) when it is connected to a load resistor. Special focus is given to the effect of the load resistor value on the vibrational amplitude of the piezoelectric EHD, and thus on the current, voltage, and power generated by the device, which are normally assumed to be independent of the load resistor value to reduce the complexity of modeling and simulation. The presented CPC-FEM uses a cantilever with a sandwich structure and a seismic mass attached to the tip to study the following characteristics of the EHD as a result of changing the load resistor value: 1) the electric outputs: the current through and voltage across the load resistor; 2) the power dissipated by the load resistor; 3) the displacement amplitude of the tip of the cantilever; and 4) the shift in the resonant frequency of the device. It is found that these characteristics of the EHD have a significant dependence on the load resistor value, rather than being independent of it as is assumed in most literature. The CPC-FEM is capable of predicting the generated output power of the EHD with different load resistor values while simultaneously calculating the effect of the load resistor value on the displacement amplitude of the tip of the cantilever. This makes the CPC-FEM invaluable for validating the performance of a designed EHD before it is fabricated and tested, thereby reducing the recurring costs associated with repeat fabrication and trials. In addition, the proposed CPC-FEM can also be used for producing an optimized design for maximum power output.

  12. Determining the influence of temperature on various types of standard resistors

    CSIR Research Space (South Africa)

    Marais, EL

    2006-10-01

    Full Text Available Types of Standard Resistors Speaker / Author: E.L. Marais CSIR National Metrology Laboratory PO Box 395, Pretoria, 0001, South Africa Email: elmarais@csir.co.za Phone: 012 841 3013 Fax: 012 841 2131 Abstract The temperature coefficient...

  13. Studies of tantalum nitride thin film resistors

    International Nuclear Information System (INIS)

    Langley, R.A.

    1975-01-01

    Backscattering of 2-MeV He ions was used to correlate the electrical properties of sputtered TaN/sub x/ thin-film resistors with their N content. The properties measured were sheet resistance, differential Seebeck potential (DSP), thermal coefficient of resistance (TCR), and stability. Resistivity and DSP are linearly dependent on N content for N/Ta ratios of 0.25 to 0.55. TCR decreases sharply below N/Ta = 0.35 and is relatively constant from 0.35 to 0.55. Stability is independent of N content. (DLC)

  14. Leaf venation, as a resistor, to optimize a switchable IR absorber.

    Science.gov (United States)

    Alston, M E; Barber, R

    2016-08-24

    Leaf vascular patterns are the mechanisms and mechanical support for the transportation of fluidics for photosynthesis and leaf development properties. Vascular hierarchical networks in leaves have far-reaching functions in optimal transport efficiency of functional fluidics. Embedding leaf morphogenesis as a resistor network is significant in the optimization of a translucent thermally functional material. This will enable regulation through pressure equalization by diminishing flow pressure variation. This paper investigates nature's vasculature networks that exhibit hierarchical branching scaling applied to microfluidics. To enable optimum potential for pressure drop regulation by algorithm design. This code analysis of circuit conduit optimization for transport fluidic flow resistance is validated against CFD simulation, within a closed loop network. The paper will propose this self-optimization, characterization by resistance seeking targeting to determine a microfluidic network as a resistor. To advance a thermally function material as a switchable IR absorber.

  15. Nonlinear random resistor diode networks and fractal dimensions of directed percolation clusters.

    Science.gov (United States)

    Stenull, O; Janssen, H K

    2001-07-01

    We study nonlinear random resistor diode networks at the transition from the nonpercolating to the directed percolating phase. The resistor-like bonds and the diode-like bonds under forward bias voltage obey a generalized Ohm's law V approximately I(r). Based on general grounds such as symmetries and relevance we develop a field theoretic model. We focus on the average two-port resistance, which is governed at the transition by the resistance exponent straight phi(r). By employing renormalization group methods we calculate straight phi(r) for arbitrary r to one-loop order. Then we address the fractal dimensions characterizing directed percolation clusters. Via considering distinct values of the nonlinearity r, we determine the dimension of the red bonds, the chemical path, and the backbone to two-loop order.

  16. Random resistor network model of minimal conductivity in graphene.

    Science.gov (United States)

    Cheianov, Vadim V; Fal'ko, Vladimir I; Altshuler, Boris L; Aleiner, Igor L

    2007-10-26

    Transport in undoped graphene is related to percolating current patterns in the networks of n- and p-type regions reflecting the strong bipolar charge density fluctuations. Finite transparency of the p-n junctions is vital in establishing the macroscopic conductivity. We propose a random resistor network model to analyze scaling dependencies of the conductance on the doping and disorder, the quantum magnetoresistance and the corresponding dephasing rate.

  17. Maximum Bandwidth Enhancement of Current Mirror using Series-Resistor and Dynamic Body Bias Technique

    Directory of Open Access Journals (Sweden)

    V. Niranjan

    2014-09-01

    Full Text Available This paper introduces a new approach for enhancing the bandwidth of a low voltage CMOS current mirror. The proposed approach is based on utilizing body effect in a MOS transistor by connecting its gate and bulk terminals together for signal input. This results in boosting the effective transconductance of MOS transistor along with reduction of the threshold voltage. The proposed approach does not affect the DC gain of the current mirror. We demonstrate that the proposed approach features compatibility with widely used series-resistor technique for enhancing the current mirror bandwidth and both techniques have been employed simultaneously for maximum bandwidth enhancement. An important consequence of using both techniques simultaneously is the reduction of the series-resistor value for achieving the same bandwidth. This reduction in value is very attractive because a smaller resistor results in smaller chip area and less noise. PSpice simulation results using 180 nm CMOS technology from TSMC are included to prove the unique results. The proposed current mirror operates at 1Volt consuming only 102 µW and maximum bandwidth extension ratio of 1.85 has been obtained using the proposed approach. Simulation results are in good agreement with analytical predictions.

  18. Depth of interaction detection with enhanced position-sensitive proportional resistor network

    International Nuclear Information System (INIS)

    Lerche, Ch.W.; Benlloch, J.M.; Sanchez, F.; Pavon, N.; Gimenez, N.; Fernandez, M.; Gimenez, M.; Sebastia, A.; Martinez, J.; Mora, F.J.

    2005-01-01

    A new method of determining the depth of interaction of γ-rays in thick inorganic scintillation crystals was tested experimentally. The method uses the strong correlation between the width of the scintillation light distribution within large continuous crystals and the γ-ray's interaction depth. This behavior was successfully reproduced by a theoretical model distribution based on the inverse square law. For the determination of the distribution's width, its standard deviation σ is computed using an enhanced position-sensitive proportional resistor network which is often used in γ-ray-imaging devices. Minor changes of this known resistor network allow the analog and real-time determination of the light distribution's 2nd moment without impairing the measurement of the energy and centroid. First experimental results are presented that confirm that the described method works correctly. Since only some cheap electronic components, but no additional detectors or crystals are required, the main advantage of this method is its low cost

  19. Programmable diode/resistor-like behavior of nanostructured vanadium pentoxide xerogel thin film.

    Science.gov (United States)

    Wan, Zhenni; Darling, Robert B; Anantram, M P

    2015-11-11

    Electrical properties of a Cr/V2O5/Cr structure are investigated and switching of the device due to electrochemical reactions is observed at low bias (resistor (reverse sweep first). The switching is irreversible and persistent, lasting for more than one month. By performing environmental tests, we prove that water molecules in the atmosphere and intercalated in the xerogel film are involved in the electrochemical reactions. It is proposed that an interfacial layer with reduced oxidation state forms at the Cr/V2O5 interface, and creates a higher Schottky barrier due to rise of electron affinity. Different interfacial layer thicknesses in forward and reverse first sweeps are responsible for different I-V characteristics in subsequent sweeps. The results suggest future applications of these V2O5 thin films in low-power read-only memory devices and diode-resistor networks.

  20. Resistor capacitor, primitive variable solution of buoyant fluid flow within an enclosure with highly temperature dependent viscosity

    Energy Technology Data Exchange (ETDEWEB)

    Burns, S.P. [Texas Univ., Austin, TX (United States); Gianoulakis, S.E. [Sandia National Labs., Albuquerque, NM (United States)

    1995-07-01

    A numerical solution for buoyant natural convection within a square enclosure containing a fluid with highly temperature dependent viscosity is presented. Although the fluid properties employed do not represent any real fluid, the large variation in the fluid viscosity with temperature is characteristic of turbulent flow modeling with eddy-viscosity concepts. Results are obtained using a primitive variable formulation and the resistor method. The results presented include velocity, temperature and pressure distributions within the enclosure as well as shear stress and heat flux distributions along the enclosure walls. Three mesh refinements were employed and uncertainty values are suggested for the final mesh refinement. These solutions are part of a contributed benchmark solution set for the subject problem.

  1. Thermocapillary actuation by optimized resistor pattern: bubbles and droplets displacing, switching and trapping.

    Science.gov (United States)

    Selva, Bertrand; Miralles, Vincent; Cantat, Isabelle; Jullien, Marie-Caroline

    2010-07-21

    We report a novel method for bubble or droplet displacement, capture and switching within a bifurcation channel for applications in digital microfluidics based on the Marangoni effect, i.e. the appearance of thermocapillary tangential interface stresses stemming from local surface tension variations. The specificity of the reported actuation is that heating is provided by an optimized resistor pattern (B. Selva, J. Marchalot and M.-C. Jullien, An optimized resistor pattern for temperature gradient control in microfluidics, J. Micromech. Microeng., 2009, 19, 065002) leading to a constant temperature gradient along a microfluidic cavity. In this context, bubbles or droplets to be actuated entail a surface force originating from the thermal Marangoni effect. This actuator has been characterized (B. Selva, I. Cantat, and M.-C. Jullien, Migration of a bubble towards a higher surface tension under the effect of thermocapillary stress, preprint, 2009) and it was found that the bubble/droplet (called further element) is driven toward a high surface tension region, i.e. toward cold region, and the element velocity increases while decreasing the cavity thickness. Taking advantage of these properties three applications are presented: (1) element displacement, (2) element switching, detailed in a given range of working, in which elements are redirected towards a specific evacuation, (3) a system able to trap, and consequently stop on demand, the elements on an alveolus structure while the continuous phase is still flowing. The strength of this method lies in its simplicity: single layer system, in situ heating leading to a high level of integration, low power consumption (P < 0.4 W), low applied voltage (about 10 V), and finally this system is able to manipulate elements within a flow velocity up to 1 cm s(-1).

  2. Thermal analysis and temperature characteristics of a braking resistor for high-speed trains for changes in the braking current

    Science.gov (United States)

    Lee, Dae-Dong; Kang, Hyun-Il; Shim, Jae-Myung

    2015-09-01

    Electric brake systems are used in high-speed trains to brake trains by converting the kinetic energy of a railway vehicle to electric energy. The electric brake system consists of a regenerative braking system and a dynamic braking system. When the electric energy generated during the dynamic braking process is changed to heat through the braking resistor, the braking resistor can overheat; thus, failures can occur to the motor block. In this paper, a braking resistor for a high-speed train was used to perform thermal analyses and tests, and the results were analyzed. The analyzed data were used to estimate the dependence of the brake currents and the temperature rises on speed changes up to 300 km/h, at which a test could not be performed.

  3. Implanted Silicon Resistor Layers for Efficient Terahertz Absorption

    Science.gov (United States)

    Chervenak, J. A.; Abrahams, J.; Allen, C. A.; Benford, D. J.; Henry, R.; Stevenson, T.; Wollack, E.; Moseley, S. H.

    2005-01-01

    Broadband absorption structures are an essential component of large format bolometer arrays for imaging GHz and THz radiation. We have measured electrical and optical properties of implanted silicon resistor layers designed to be suitable for these absorbers. Implanted resistors offer a low-film-stress, buried absorber that is robust to longterm aging, temperature, and subsequent metals processing. Such an absorber layer is readily integrated with superconducting integrated circuits and standard micromachining as demonstrated by the SCUBA II array built by ROE/NIST (1). We present a complete characterization of these layers, demonstrating frequency regimes in which different recipes will be suitable for absorbers. Single layer thin film coatings have been demonstrated as effective absorbers at certain wavelengths including semimetal (2,3), thin metal (4), and patterned metal films (5,6). Astronomical instrument examples include the SHARC II instrument is imaging the submillimeter band using passivated Bi semimetal films and the HAWC instrument for SOFIA, which employs ultrathin metal films to span 1-3 THz. Patterned metal films on spiderweb bolometers have also been proposed for broadband detection. In each case, the absorber structure matches the impedance of free space for optimal absorption in the detector configuration (typically 157 Ohms per square for high absorption with a single or 377 Ohms per square in a resonant cavity or quarter wave backshort). Resonant structures with -20% bandwidth coupled to bolometers are also under development; stacks of such structures may take advantage of instruments imaging over a wide band. Each technique may enable effective absorbers in imagers. However, thin films tend to age, degrade or change during further processing, can be difficult to reproduce, and often exhibit an intrinsic granularity that creates complicated frequency dependence at THz frequencies. Thick metal films are more robust but the requirement for

  4. Scaling in small-world resistor networks

    International Nuclear Information System (INIS)

    Korniss, G.; Hastings, M.B.; Bassler, K.E.; Berryman, M.J.; Kozma, B.; Abbott, D.

    2006-01-01

    We study the effective resistance of small-world resistor networks. Utilizing recent analytic results for the propagator of the Edwards-Wilkinson process on small-world networks, we obtain the asymptotic behavior of the disorder-averaged two-point resistance in the large system-size limit. We find that the small-world structure suppresses large network resistances: both the average resistance and its standard deviation approaches a finite value in the large system-size limit for any non-zero density of random links. We also consider a scenario where the link conductance decays as a power of the length of the random links, l -α . In this case we find that the average effective system resistance diverges for any non-zero value of α

  5. A real time status monitor for transistor bank driver power limit resistor in boost injection kicker power supply

    Energy Technology Data Exchange (ETDEWEB)

    Mi, J.; Tan, Y.; Zhang, W.

    2011-03-28

    For years suffering of Booster Injection Kicker transistor bank driver regulator troubleshooting, a new real time monitor system has been developed. A simple and floating circuit has been designed and tested. This circuit monitor system can monitor the driver regulator power limit resistor status in real time and warn machine operator if the power limit resistor changes values. This paper will mainly introduce the power supply and the new designed monitoring system. This real time resistor monitor circuit shows a useful method to monitor some critical parts in the booster pulse power supply. After two years accelerator operation, it shows that this monitor works well. Previously, we spent a lot of time in booster machine trouble shooting. We will reinstall all 4 PCB into Euro Card Standard Chassis when the power supply system will be updated.

  6. A novel Silicon Photomultiplier with bulk integrated quench resistors: utilization in optical detection and tracking applications for particle physics

    Energy Technology Data Exchange (ETDEWEB)

    Petrovics, Stefan, E-mail: stp@hll.mpg.de [Halbleiterlabor der Max-Planck Gesellschaft, Otto-Hahn-Ring 6, D-81739 Munich (Germany); Andricek, Ladislav [Halbleiterlabor der Max-Planck Gesellschaft, Otto-Hahn-Ring 6, D-81739 Munich (Germany); Diehl, Inge; Hansen, Karsten [DESY, Notkestrasse 85, D-22607 Hamburg (Germany); Jendrysik, Christian [Infineon Technologies AG, Am Campeon 1-12, D-85579 Neubiberg (Germany); Krueger, Katja [DESY, Notkestrasse 85, D-22607 Hamburg (Germany); Lehmann, Raik; Ninkovic, Jelena [Halbleiterlabor der Max-Planck Gesellschaft, Otto-Hahn-Ring 6, D-81739 Munich (Germany); Reckleben, Christian [DESY, Notkestrasse 85, D-22607 Hamburg (Germany); Richter, Rainer; Schaller, Gerhard; Schopper, Florian [Halbleiterlabor der Max-Planck Gesellschaft, Otto-Hahn-Ring 6, D-81739 Munich (Germany); Sefkow, Felix [DESY, Notkestrasse 85, D-22607 Hamburg (Germany)

    2017-02-11

    Silicon Photomultipliers (SiPMs) are a promising candidate for replacing conventional photomultiplier tubes (PMTs) in many applications, thanks to ongoing developments and advances in their technology. Conventional SiPMs are generally an array of avalanche photo diodes, operated in Geiger mode and read out in parallel, thus leading to the necessity of a high ohmic quenching resistor. This resistor enables passive quenching and is usually located on top of the array, limiting the fill factor of the device. In this paper, a novel detector concept with a bulk integrated quenching resistor will be recapped. In addition, due to other advantages of this novel detector design, a new concept, in which these devices will be utilized as tracking detectors for particle physics applications will be introduced, as well as first simulation studies and experimental measurements of this new approach. - Highlights: • A novel SiPM concept with bulk integrated quenching resistor is shown. • First prototypes of these SiPMs as tracking detectors are proposed. • Simulations of the Geiger efficiency suggest feasible operations at low overbias. • First measurements of the electron detection efficiency show promising results. • Measurements are in good agreement with the simulations.

  7. Corrections to scaling in random resistor networks and diluted continuous spin models near the percolation threshold.

    Science.gov (United States)

    Janssen, Hans-Karl; Stenull, Olaf

    2004-02-01

    We investigate corrections to scaling induced by irrelevant operators in randomly diluted systems near the percolation threshold. The specific systems that we consider are the random resistor network and a class of continuous spin systems, such as the x-y model. We focus on a family of least irrelevant operators and determine the corrections to scaling that originate from this family. Our field theoretic analysis carefully takes into account that irrelevant operators mix under renormalization. It turns out that long standing results on corrections to scaling are respectively incorrect (random resistor networks) or incomplete (continuous spin systems).

  8. Random-Resistor-Random-Temperature Kirchhoff-Law-Johnson-Noise (RRRT-KLJN Key Exchange

    Directory of Open Access Journals (Sweden)

    Kish Laszlo B.

    2016-03-01

    Full Text Available We introduce two new Kirchhoff-law-Johnson-noise (KLJN secure key distribution schemes which are generalizations of the original KLJN scheme. The first of these, the Random-Resistor (RR- KLJN scheme, uses random resistors with values chosen from a quasi-continuum set. It is well-known since the creation of the KLJN concept that such a system could work in cryptography, because Alice and Bob can calculate the unknown resistance value from measurements, but the RR-KLJN system has not been addressed in prior publications since it was considered impractical. The reason for discussing it now is the second scheme, the Random Resistor Random Temperature (RRRT- KLJN key exchange, inspired by a recent paper of Vadai, Mingesz and Gingl, wherein security was shown to be maintained at non-zero power flow. In the RRRT-KLJN secure key exchange scheme, both the resistances and their temperatures are continuum random variables. We prove that the security of the RRRT-KLJN scheme can prevail at a non-zero power flow, and thus the physical law guaranteeing security is not the Second Law of Thermodynamics but the Fluctuation-Dissipation Theorem. Alice and Bob know their own resistances and temperatures and can calculate the resistance and temperature values at the other end of the communication channel from measured voltage, current and power-flow data in the wire. However, Eve cannot determine these values because, for her, there are four unknown quantities while she can set up only three equations. The RRRT-KLJN scheme has several advantages and makes all former attacks on the KLJN scheme invalid or incomplete.

  9. An evaluation of a translator for finite element data to resistor/capacitor data for the heat diffusion equation

    International Nuclear Information System (INIS)

    Manteufel, R.D.; Klein, D.E.; Yoshimura, H.R.

    1988-01-01

    This paper evaluates a translator for finite element data to resistor/capacitor data (FEM/RC) for the numerical solution of heat diffusion problems. The translator involves the derivation of thermal resistors and capacitors, implicit in the heat balance formulation of the finite difference method. It uses a finite element mesh, which consists of nodes and elements and is implicit in the Galerkin finite element method (GFEM). This hybrid translation method, FEM/RC, has been incorporated in Q/TRAN, a new thermal analysis computer code. This evaluation compares Q/TRAN, HEATING-6, and a research code employing GFEM on a purely mathematical, highly nonlinear steady-state conduction benchmark problem. The evaluation concludes that the FEM/RC technique has numerical characteristics that are consistent with comparable schemes for the benchmark problem. FEM/RC also accurately translates skewed meshes. Because FEM/RC generates resistors and capacitors, it appears to offer a more efficient method than the classical GFEM

  10. Effects of a parallel resistor on electrical characteristics of a piezoelectric transformer in open-circuit transient state.

    Science.gov (United States)

    Chang, Kuo-Tsai

    2007-01-01

    This paper investigates electrical transient characteristics of a Rosen-type piezoelectric transformer (PT), including maximum voltages, time constants, energy losses and average powers, and their improvements immediately after turning OFF. A parallel resistor connected to both input terminals of the PT is needed to improve the transient characteristics. An equivalent circuit for the PT is first given. Then, an open-circuit voltage, involving a direct current (DC) component and an alternating current (AC) component, and its related energy losses are derived from the equivalent circuit with initial conditions. Moreover, an AC power control system, including a DC-to-AC resonant inverter, a control switch and electronic instruments, is constructed to determine the electrical characteristics of the OFF transient state. Furthermore, the effects of the parallel resistor on the transient characteristics at different parallel resistances are measured. The advantages of adding the parallel resistor also are discussed. From the measured results, the DC time constant is greatly decreased from 9 to 0.04 ms by a 10 k(omega) parallel resistance under open output.

  11. Applicability of the lattice Boltzmann method to determine the ohmic resistance in equivalent resistor connections

    Science.gov (United States)

    Espinoza-Andaluz, Mayken; Barzola, Julio; Guarochico-Moreira, Víctor H.; Andersson, Martin

    2017-12-01

    Knowing the ohmic resistance in the materials allow to know in advance its electrical behavior when a potential difference is applied, and therefore the prediction of the electrical performance can be achieved in a most certain manner. Although the Lattice Boltzmann method (LBM) has been applied to solve several physical phenomena in complex geometries, it has only been used to describe the fluid phase, but applicability studies of LBM on the solid-electric-conducting material have not been carried out yet. The purpose of this paper is to demonstrate the accuracy of calculating the equivalent resistor connections using LBM. Several series and parallel resistor connections are effected. All the computations are carried out with 3D models, and the domain materials are designed by the authors.

  12. Cosmic Ray Measurements by Scintillators with Metal Resistor Semiconductor Avalanche Photo Diodes

    Science.gov (United States)

    Blanco, Francesco; La Rocca, Paola; Riggi, Francesco; Akindinov, Alexandre; Mal'kevich, Dmitry

    2008-01-01

    An educational set-up for cosmic ray physics experiments is described. The detector is based on scintillator tiles with a readout through metal resistor semiconductor (MRS) avalanche photo diode (APD) arrays. Typical measurements of the cosmic angular distribution at sea level and a study of the East-West asymmetry obtained by such a device are…

  13. Logic delays of 5-μm resistor coupled Josephson logic

    International Nuclear Information System (INIS)

    Sone, J.; Yoshida, T.; Tahara, S.; Abe, H.

    1982-01-01

    Logic delays of resistor coupled Josephson logic (RCJL) have been investigated. An experimental circuit with a cascade chain of ten RCJL OR gates was fabricated using Pb-alloy Josephson IC technology with 5-μm minimum linewidth. Logic delay was measured to be as low as 10.8 ps with power dissipation of 11.7 μW. This demonstrates a switching operation faster than those reported for other Josephson gate designs. Comparison with computer-simulation results is also presented

  14. Anisotropic generalization of Stinchcombe's solution for the conductivity of random resistor networks on a Bethe lattice

    Science.gov (United States)

    Semeriyanov, F.; Saphiannikova, M.; Heinrich, G.

    2009-11-01

    Our study is based on the work of Stinchcombe (1974 J. Phys. C: Solid State Phys. 7 179) and is devoted to the calculations of average conductivity of random resistor networks placed on an anisotropic Bethe lattice. The structure of the Bethe lattice is assumed to represent the normal directions of the regular lattice. We calculate the anisotropic conductivity as an expansion in powers of the inverse coordination number of the Bethe lattice. The expansion terms retained deliver an accurate approximation of the conductivity at resistor concentrations above the percolation threshold. We make a comparison of our analytical results with those of Bernasconi (1974 Phys. Rev. B 9 4575) for the regular lattice.

  15. Anisotropic generalization of Stinchcombe's solution for the conductivity of random resistor networks on a Bethe lattice

    International Nuclear Information System (INIS)

    Semeriyanov, F; Saphiannikova, M; Heinrich, G

    2009-01-01

    Our study is based on the work of Stinchcombe (1974 J. Phys. C: Solid State Phys. 7 179) and is devoted to the calculations of average conductivity of random resistor networks placed on an anisotropic Bethe lattice. The structure of the Bethe lattice is assumed to represent the normal directions of the regular lattice. We calculate the anisotropic conductivity as an expansion in powers of the inverse coordination number of the Bethe lattice. The expansion terms retained deliver an accurate approximation of the conductivity at resistor concentrations above the percolation threshold. We make a comparison of our analytical results with those of Bernasconi (1974 Phys. Rev. B 9 4575) for the regular lattice.

  16. A neutral grounding metallic resistor failure in a 35 kV network

    Directory of Open Access Journals (Sweden)

    Simić Ninoslav

    2011-01-01

    Full Text Available This paper presents the results of observations and measurements of the impedance of the metal resistor for grounding neutral of the 35 kV network, before and after damaging event. The proposed measures are to be taken in order to eliminate a failure in this particular case, as well as the prevention of similar events.

  17. Asymptotic expansion for the resistance between two maximally separated nodes on an M by N resistor network.

    Science.gov (United States)

    Izmailian, N Sh; Huang, Ming-Chang

    2010-07-01

    We analyze the exact formulas for the resistance between two arbitrary notes in a rectangular network of resistors under free, periodic and cylindrical boundary conditions obtained by Wu [J. Phys. A 37, 6653 (2004)]. Based on such expression, we then apply the algorithm of Ivashkevich, Izmailian, and Hu [J. Phys. A 35, 5543 (2002)] to derive the exact asymptotic expansions of the resistance between two maximally separated nodes on an M×N rectangular network of resistors with resistors r and s in the two spatial directions. Our results is 1/s (R(M×N))(r,s) = c(ρ)ln S + c(0)(ρ,ξ) + ∑(p=1)(∞) (c(2p)(ρ,ξ))/S(p) with S = MN, ρ = r/s and ξ = M/N. The all coefficients in this expansion are expressed through analytical functions. We have introduced the effective aspect ratio ξeff = square root(ρ)ξ for free and periodic boundary conditions and ξeff = square root(ρ)ξ/2 for cylindrical boundary condition and show that all finite-size correction terms are invariant under transformation ξeff→1/ξeff.

  18. An optimized resistor pattern for temperature gradient control in microfluidics

    Science.gov (United States)

    Selva, Bertrand; Marchalot, Julien; Jullien, Marie-Caroline

    2009-06-01

    In this paper, we demonstrate the possibility of generating high-temperature gradients with a linear temperature profile when heating is provided in situ. Thanks to improved optimization algorithms, the shape of resistors, which constitute the heating source, is optimized by applying the genetic algorithm NSGA-II (acronym for the non-dominated sorting genetic algorithm) (Deb et al 2002 IEEE Trans. Evol. Comput. 6 2). Experimental validation of the linear temperature profile within the cavity is carried out using a thermally sensitive fluorophore, called Rhodamine B (Ross et al 2001 Anal. Chem. 73 4117-23, Erickson et al 2003 Lab Chip 3 141-9). The high level of agreement obtained between experimental and numerical results serves to validate the accuracy of this method for generating highly controlled temperature profiles. In the field of actuation, such a device is of potential interest since it allows for controlling bubbles or droplets moving by means of thermocapillary effects (Baroud et al 2007 Phys. Rev. E 75 046302). Digital microfluidics is a critical area in the field of microfluidics (Dreyfus et al 2003 Phys. Rev. Lett. 90 14) as well as in the so-called lab-on-a-chip technology. Through an example, the large application potential of such a technique is demonstrated, which entails handling a single bubble driven along a cavity using simple and tunable embedded resistors.

  19. An optimized resistor pattern for temperature gradient control in microfluidics

    International Nuclear Information System (INIS)

    Selva, Bertrand; Marchalot, Julien; Jullien, Marie-Caroline

    2009-01-01

    In this paper, we demonstrate the possibility of generating high-temperature gradients with a linear temperature profile when heating is provided in situ. Thanks to improved optimization algorithms, the shape of resistors, which constitute the heating source, is optimized by applying the genetic algorithm NSGA-II (acronym for the non-dominated sorting genetic algorithm) (Deb et al 2002 IEEE Trans. Evol. Comput. 6 2). Experimental validation of the linear temperature profile within the cavity is carried out using a thermally sensitive fluorophore, called Rhodamine B (Ross et al 2001 Anal. Chem. 73 4117–23, Erickson et al 2003 Lab Chip 3 141–9). The high level of agreement obtained between experimental and numerical results serves to validate the accuracy of this method for generating highly controlled temperature profiles. In the field of actuation, such a device is of potential interest since it allows for controlling bubbles or droplets moving by means of thermocapillary effects (Baroud et al 2007 Phys. Rev. E 75 046302). Digital microfluidics is a critical area in the field of microfluidics (Dreyfus et al 2003 Phys. Rev. Lett. 90 14) as well as in the so-called lab-on-a-chip technology. Through an example, the large application potential of such a technique is demonstrated, which entails handling a single bubble driven along a cavity using simple and tunable embedded resistors

  20. Use of cermet thin film resistors with nitride passivated metal insulator field effect transistor

    Science.gov (United States)

    Brown, G. A.; Harrap, V.

    1971-01-01

    Film deposition of cermet resistors on same chip with metal nitride oxide silicon field effect transistors permits protection of contamination sensitive active devices from contaminants produced in cermet deposition and definition processes. Additional advantages include lower cost, greater reliability, and space savings.

  1. A new method of removing the high value feedback resistor in the charge sensitive preamplifier

    International Nuclear Information System (INIS)

    Xi Deming

    1993-01-01

    A new method of removing the high value feedback resistor in the charge sensitive preamplifier is introduced. The circuit analysis of this novel design is described and the measured performances of a practical circuit are provided

  2. Hand-Drawn Resistors and a Simple Tester Using a Light-Emitting Diode

    Science.gov (United States)

    Kamata, Masahiro; Abe, Mayumi

    2012-01-01

    A thick line drawn on a sheet of paper with a 6B pencil is electrically conductive and its resistance can be roughly estimated using a simple tester made of a light-emitting diode (LED) and a lithium coin-type cell. Using this hand-drawn resistor and the LED tester, we developed teaching materials that help students to understand how electrical…

  3. Indium Tin Oxide Resistor-Based Nitric Oxide Microsensors

    Science.gov (United States)

    Xu, Jennifer C.; Hunter, Gary W.; Gonzalez, Jose M., III; Liu, Chung-Chiun

    2012-01-01

    A sensitive resistor-based NO microsensor, with a wide detection range and a low detection limit, has been developed. Semiconductor microfabrication techniques were used to create a sensor that has a simple, robust structure with a sensing area of 1.10 0.99 mm. A Pt interdigitated structure was used for the electrodes to maximize the sensor signal output. N-type semiconductor indium tin oxide (ITO) thin film was sputter-deposited as a sensing material on the electrode surface, and between the electrode fingers. Alumina substrate (250 m in thickness) was sequentially used for sensor fabrication. The resulting sensor was tested by applying a voltage across the two electrodes and measuring the resulting current. The sensor was tested at different concentrations of NO-containing gas at a range of temperatures. Preliminary results showed that the sensor had a relatively high sensitivity to NO at 450 C and 1 V. NO concentrations from ppm to ppb ranges were detected with the low limit of near 159 ppb. Lower NO concentrations are being tested. Two sensing mechanisms were involved in the NO gas detection at ppm level: adsorption and oxidation reactions, whereas at ppb level of NO, only one sensing mechanism of adsorption was involved. The NO microsensor has the advantages of high sensitivity, small size, simple batch fabrication, high sensor yield, low cost, and low power consumption due to its microsize. The resistor-based thin-film sensor is meant for detection of low concentrations of NO gas, mainly in the ppb or lower range, and is being developed concurrently with other sensor technology for multispecies detection. This development demonstrates that ITO is a sensitive sensing material for NO detection. It also provides crucial information for future selection of nanostructured and nanosized NO sensing materials, which are expected to be more sensitive and to consume less power.

  4. 4-bit digital to analog converter using R-2R ladder and binary weighted resistors

    Science.gov (United States)

    Diosanto, J.; Batac, M. L.; Pereda, K. J.; Caldo, R.

    2017-06-01

    The use of a 4-bit digital-to-analog converter using two methods; Binary Weighted Resistors and R-2R Ladder is designed and presented in this paper. The main components that were used in constructing both circuits were different resistor values, operational amplifier (LM741) and single pole double throw switches. Both circuits were designed using MULTISIM software to be able to test the circuit for its ideal application and FRITZING software for the layout designing and fabrication to the printed circuit board. The implementation of both systems in an actual circuit benefits in determining and comparing the advantages and disadvantages of each. It was realized that the binary weighted circuit is more efficient DAC, having lower percentage error of 0.267% compared to R-2R ladder circuit which has a minimum of percentage error of 4.16%.

  5. Sizing of the Series Dynamic Breaking Resistor in a Doubly Fed Induction Generator Wind Turbine

    DEFF Research Database (Denmark)

    Soliman, Hammam; Wang, Huai; Zhou, Dao

    2014-01-01

    This paper investigates the effect of Series Dynamic Breaking Resistor (SDBR) sizing on a Doubly Fed Induction Generator (DFIG) based wind power conversion system. The boundary of the SDBR value is firstly derived by taking into account the controllability of the rotor side converter and the maxi......This paper investigates the effect of Series Dynamic Breaking Resistor (SDBR) sizing on a Doubly Fed Induction Generator (DFIG) based wind power conversion system. The boundary of the SDBR value is firstly derived by taking into account the controllability of the rotor side converter...... and the maximum allowable voltage of the stator. Then the impact of the SDBR value on the rotor current, stator voltage, DC-link voltage, reactive power capability and introduced power loss during voltage sag operation is evaluated by simulation. The presented study enables a trade-off sizing of the SDBR among...

  6. Implantable bladder volume sensor based on resistor ladder network composed of conductive hydrogel composite.

    Science.gov (United States)

    Mi Kyung Kim; Hyojung Kim; Jung, Yeon Su; Adem, Kenana M A; Bawazir, Sarah S; Stefanini, Cesare; Lee, Hyunjoo J

    2017-07-01

    An accurate bladder volume monitoring system is a critical component in diagnosis and treatment of urological disorders. Here, we report an implantable bladder volume sensor with a multi-level resistor ladder which estimates the bladder volume through discrete resistance values. Discretization allows the sensor output to be resilient to the long-term drift, hysteresis, and degradation of the sensor materials. Our sensor is composed of biocompatible polypyrrole/agarose hydrogel composite. Because Young's modulus of this composite is comparable to that of the bladder wall, the effect of mechanical loading of the sensor on the bladder movement is minimized which allows more accurate volume monitoring. We also demonstrate the patterning and molding capability of this material by fabrication various structures. Lastly, we successfully demonstrate the functionality of the multi-level resistor ladder sensor as a bladder volume sensor by attaching the sensor on the pig's bladder and observing the impedance change of the sensor.

  7. Suppression of Adverse Effects of GIC Using Controlled Variable Grounding Resistor

    Science.gov (United States)

    Abuhussein, A.; Ali, M. H.

    2016-12-01

    Geomagnetically induced current (GIC) has a harmful impact on power systems, with a large footprint. Mitigation strategies for the GIC are required to protect the integrity of the power system. To date, the adverse effects of GIC are being mitigated by either operational procedures or grounding fixed capacitors (GFCs). The operational procedures are uncertain, reduce systems' reliability, and increase energy losses. On the other hand, GFCs, incur voltage spikes, increase the transformer cost substantially, and require protection circuitry. This study investigates new possible approaches to cope with GIC, by using a controlled variable grounding resistor (CVGR), without interfering with the system's normal operation. In addition, the new techniques help suppress unsymmetrical faults in the power network. The controllability of the grounding resistor is applied using three different techniques: (1) a Parallel switch that is controlled by PI regulated duty cycle, (2) a Parallel switch that is triggered by a preset values in a look-up-table (LUT), and (3) a Mechanical resistor varied by a Fuzzy logic controller (FLC). The experimental results were obtained and validated using the MATLAB/SIMULINK software. A hypothetical power system that consists of a generator, a 765kv, 500 km long transmission lines connecting between a step-up, Δ-Yn, transformer, and a step-down, Yn-Δ, transformer, is considered. The performance of the CVGR is compared with that of the GFC under the cases of GIC event and unsymmetrical faults. From the simulation results, the following points are concluded: The CVGR effectively suppresses the GIC flowing in the system. Consequently, it protects the transformers from saturation and the rest of the system from collapsing. The CVGR also reduces the voltage and power swings associated with unsymmetrical faults and blocks the zero sequence current flowing through the neutral of the transformer. The performance of the CVGR surpasses that of the GFC in

  8. 30 CFR 77.802 - Protection of high-voltage circuits; neutral grounding resistors; disconnecting devices.

    Science.gov (United States)

    2010-07-01

    ... AND SURFACE WORK AREAS OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.802 Protection... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Protection of high-voltage circuits; neutral... grounded through a suitable resistor at the source transformers, and a grounding circuit, originating at...

  9. Effects of varying laser trimming geometries on thin film\\ud resistors

    OpenAIRE

    Alafogianni, Maria; Birkett, Martin; Penlington, Roger

    2017-01-01

    Purpose - This paper studies the effects of varying laser trim patterns on several performance parameters of thin film resistors such as the temperature coefficient of resistance (TCR) and target resistance value.\\ud \\ud Design/methodology/approach - The benefits and limitations of basic trim patterns are taken into consideration and the plunge cut, double plunge cut and the curved L-cut were selected to be modelled and tested experimentally. A computer simulation of the laser trim patterns h...

  10. 75 FR 32806 - Notice of Issuance of Final Determination Concerning Certain Upright and Recumbent Exercise Bikes

    Science.gov (United States)

    2010-06-09

    ... resistor/bracket/cable assembly; the PCB/ battery assembly; the reed switch/bracket subassembly; the shroud...; (alternator-pulley assembly) 9. Assembling resistor, resistor brackets, resistor rod and covering the assembly with cardboard insulator; (rear resistor/ bracket/cable assembly) 10. Installing wire harness to the...

  11. The Transition from Traditional to Whole Language Instruction: A Continuum from Reformers to Resistors.

    Science.gov (United States)

    Schweiker, Karyn E.; Barksdale-Ladd, Mary Alice

    Factors that influenced teachers to become reformers, reviewers, or resistors to whole language were investigated with specific examination of school culture. In this study three transitioning school sites were selected on the basis of their similarity in staffing and student size. Participants from each school involved three to four classroom…

  12. Low noise charge sensitive preamplifier DC stabilized without a physical resistor

    Science.gov (United States)

    Bertuccio, Giuseppe; Rehak, Pavel; Xi, Deming

    1994-09-13

    The invention is a novel charge sensitive preamplifier (CSP) which has no resistor in parallel with the feedback capacitor. No resetting circuit is required to discharge the feedback capacitor. The DC stabilization of the preamplifier is obtained by means of a second feedback loop between the preamplifier output and the common base transistor of the input cascode. The input transistor of the preamplifier is a Junction Field Transistor (JFET) with the gate-source junction forward biased. The detector leakage current flows into this junction. This invention is concerned with a new circuit configuration for a charge sensitive preamplifier and a novel use of the input Field Effect Transistor of the CSP itself. In particular this invention, in addition to eliminating the feedback resistor, eliminates the need for external devices between the detector and the preamplifier, and it eliminates the need for external circuitry to sense the output voltage and reset the CSP. Furthermore, the noise level of the novel CSP is very low, comparable with the performance achieved with other solutions. Experimental tests prove that this configuration for the charge sensitive preamplifier permits an excellent noise performance at temperatures including room temperature. An equivalent noise charge of less than 20 electrons r.m.s. has been measured at room temperature by using a commercial JFET as input device of the preamplifier.

  13. Resistance and resistance fluctuations in random resistor networks under biased percolation.

    Science.gov (United States)

    Pennetta, Cecilia; Reggiani, L; Trefán, Gy; Alfinito, E

    2002-06-01

    We consider a two-dimensional random resistor network (RRN) in the presence of two competing biased processes consisting of the breaking and recovering of elementary resistors. These two processes are driven by the joint effects of an electrical bias and of the heat exchange with a thermal bath. The electrical bias is set up by applying a constant voltage or, alternatively, a constant current. Monte Carlo simulations are performed to analyze the network evolution in the full range of bias values. Depending on the bias strength, electrical failure or steady state are achieved. Here we investigate the steady state of the RRN focusing on the properties of the non-Ohmic regime. In constant-voltage conditions, a scaling relation is found between /(0) and V/V(0), where is the average network resistance, (0) the linear regime resistance, and V0 the threshold value for the onset of nonlinearity. A similar relation is found in constant-current conditions. The relative variance of resistance fluctuations also exhibits a strong nonlinearity whose properties are investigated. The power spectral density of resistance fluctuations presents a Lorentzian spectrum and the amplitude of fluctuations shows a significant non-Gaussian behavior in the prebreakdown region. These results compare well with electrical breakdown measurements in thin films of composites and of other conducting materials.

  14. Electrical properties of thick-layer piezo resistors based on Bi2Ru2O7

    International Nuclear Information System (INIS)

    Golonka, L.; Tankiewicz, S.

    1997-01-01

    Piezoelectric effect and electrical properties of thick-layer resistors based on Bi 2 Ru 2 O 7 (on ceramic substrate) have been studied. The influence of selected technological parameters (sintering temperature, chemical composition, heat treatment) on system properties has been estimated. 4 refs, 7 figs

  15. A study of cross-bridge kelvin resistor structures for reliable measurement of low contact resistances

    NARCIS (Netherlands)

    Stavitski, N.; Klootwijk, J.H.; van Zeijl, H.W.; Kovalgin, Alexeij Y.; Wolters, Robertus A.M.

    2008-01-01

    The parasitic factors that strongly influence the measurement accuracy of Cross-Bridge Kelvin Resistor (CBKR) structures for low specific contact resistances (�?c) have been extensively discussed during last few decades and the minimum of the �?c value, which could be accurately extracted, was

  16. Anisotropic generalization of Stinchcombe's solution for the conductivity of random resistor networks on a Bethe lattice

    Energy Technology Data Exchange (ETDEWEB)

    Semeriyanov, F; Saphiannikova, M; Heinrich, G [Leibniz Institute of Polymer Research Dresden, Hohe str. 6, 01069 Dresden (Germany)], E-mail: fsemeriyanov@yahoo.de

    2009-11-20

    Our study is based on the work of Stinchcombe (1974 J. Phys. C: Solid State Phys. 7 179) and is devoted to the calculations of average conductivity of random resistor networks placed on an anisotropic Bethe lattice. The structure of the Bethe lattice is assumed to represent the normal directions of the regular lattice. We calculate the anisotropic conductivity as an expansion in powers of the inverse coordination number of the Bethe lattice. The expansion terms retained deliver an accurate approximation of the conductivity at resistor concentrations above the percolation threshold. We make a comparison of our analytical results with those of Bernasconi (1974 Phys. Rev. B 9 4575) for the regular lattice.

  17. Ultrathin microwave metamaterial absorber utilizing embedded resistors

    Science.gov (United States)

    Kim, Young Ju; Hwang, Ji Sub; Yoo, Young Joon; Khuyen, Bui Xuan; Rhee, Joo Yull; Chen, Xianfeng; Lee, YoungPak

    2017-10-01

    We numerically and experimentally studied an ultrathin and broadband perfect absorber by enhancing the bandwidth with embedded resistors into the metamaterial structure, which is easy to fabricate in order to lower the Q-factor and by using multiple resonances with the patches of different sizes. We analyze the absorption mechanism in terms of the impedance matching with the free space and through the distribution of surface current at each resonance frequency. The magnetic field, induced by the antiparallel surface currents, is formed strongly in the direction opposite to the incident electromagnetic wave, to cancel the incident wave, leading to the perfect absorption. The corresponding experimental absorption was found to be higher than 97% in 0.88-3.15 GHz. The agreement between measurement and simulation was good. The aspects of our proposed structure can be applied to future electronic devices, for example, advanced noise-suppression sheets in the microwave regime.

  18. Development of high voltage surge limiting resistor for protection of HV multiplier of 3 MeV DC accelerator

    International Nuclear Information System (INIS)

    Dewangan, S.; Sharma, D.K.; Bakhtsingh, R.I.

    2013-01-01

    A 3MeV, 10mA DC electron beam accelerator is in commissioning stages at EBC, Kharghar, Navi Mumbai. The accelerating potential of -3MV is generated by a Parallel Coupled Voltage Multiplier (PCVM) scheme using 74 stages of HV rectifier stacks in the 6 kg/cm 2 SF6 gas environment. The HV surges of order of 600kV, 42kA, 10ns is estimated across the rectifier stacks during sparking in the multiplier column. To limit the surge current and protect the rectifier diodes, a non inductive thick film surge limiting resistor (SLR) and protective spark gap is designed and developed. The rectifier stacks with surge limiting resistors at both the ends and protective spark gap in parallel has been successfully tested in simulated surge condition at an impulse voltage of 212kVp, 150ns FWHM and surge energy of 200J, 10ms, 20kV at 6kg/cm 2 SF6 gas environment and found satisfactorily. Subsequently the HV multiplier was installed with this surge protection scheme and is being tested at 1.2 MeV level. This paper describes the design features and test results of the non-inductive surge limiting resistor. (author)

  19. Current flow in random resistor networks: the role of percolation in weak and strong disorder.

    Science.gov (United States)

    Wu, Zhenhua; López, Eduardo; Buldyrev, Sergey V; Braunstein, Lidia A; Havlin, Shlomo; Stanley, H Eugene

    2005-04-01

    We study the current flow paths between two edges in a random resistor network on a L X L square lattice. Each resistor has resistance e(ax) , where x is a uniformly distributed random variable and a controls the broadness of the distribution. We find that: (a) The scaled variable u identical with u congruent to L/a(nu) , where nu is the percolation connectedness exponent, fully determines the distribution of the current path length l for all values of u . For u > 1, the behavior corresponds to the weak disorder limit and l scales as l approximately L, while for u < 1 , the behavior corresponds to the strong disorder limit with l approximately L(d(opt) ), where d(opt) =1.22+/-0.01 is the optimal path exponent. (b) In the weak disorder regime, there is a length scale xi approximately a(nu), below which strong disorder and critical percolation characterize the current path.

  20. "Weak quantum chaos" and its resistor network modeling.

    Science.gov (United States)

    Stotland, Alexander; Pecora, Louis M; Cohen, Doron

    2011-06-01

    Weakly chaotic or weakly interacting systems have a wide regime where the common random matrix theory modeling does not apply. As an example we consider cold atoms in a nearly integrable optical billiard with a displaceable wall (piston). The motion is completely chaotic but with a small Lyapunov exponent. The Hamiltonian matrix does not look like one taken from a Gaussian ensemble, but rather it is very sparse and textured. This can be characterized by parameters s and g which reflect the percentage of large elements and their connectivity, respectively. For g we use a resistor network calculation that has a direct relation to the semilinear response characteristics of the system, hence leading to a prediction regarding the energy absorption rate of cold atoms in optical billiards with vibrating walls.

  1. Resistor-less charge sensitive amplifier for semiconductor detectors

    Energy Technology Data Exchange (ETDEWEB)

    Pelczar, K., E-mail: krzysztof.pelczar@doctoral.uj.edu.pl; Panas, K.; Zuzel, G.

    2016-11-01

    A new concept of a Charge Sensitive Amplifier without a high-value resistor in the feedback loop is presented. Basic spectroscopic parameters of the amplifier coupled to a coaxial High Purity Germanium detector (HPGe) are discussed. The amplifier signal input is realized with an n-channel J-FET transistor. The feedback capacitor is discharged continuously by the second, forward biased n-channel J-FET, driven by an RC low–pass filter. Both the analog—with a standard spectroscopy amplifier and a multi-channel analyzer—and the digital—by applying a Flash Analog to Digital Converter—signal readouts were tested. The achieved resolution in the analog and the digital readouts was 0.17% and 0.21%, respectively, at the Full Width at Half Maximum of the registered {sup 60}Co 1332.5 keV gamma line.

  2. Improvement in the voltage grading (axial and radial) of the generator column of a Van de Graaf generator by the use of a resistor chain

    International Nuclear Information System (INIS)

    Prabhakar, B.R.

    1977-01-01

    It is well known that the use of a series of resistors, connected between the equipotential rings of a Van de Graaff generator, improves the axial voltage grading of the generator. The work reported in this paper shows how the resistor chain also improves the radial voltage gradient. The electrolytic field mapping technique was adopted in the present work. (Auth.)

  3. Investigation on powder metallurgy Cr-Si-Ta-Al alloy target for high-resistance thin film resistors with low temperature coefficient of resistance

    International Nuclear Information System (INIS)

    Wang, X.Y.; Zhang, Z.S.; Bai, T.

    2010-01-01

    The sputtering target for high-resistance thin film resistors plays a decisive role in temperature coefficient of resistance (TCR). Silicon-rich chromium (Cr)-silicon (Si) target was designed and smelted for high-resistance thin film resistors with low TCR. Valve metal tantalum (Ta) and aluminum (Al) were introduced to the Cr-Si target to improve the performance of the target prepared. The measures for grain refining in smelting Cr-Si-Ta-Al target were taken to improve the performance of the prepared target. The mechanism and role of grain refinement were discussed in the paper. The phase structure of the prepared target was detected by X-ray diffraction (XRD). Rate of temperature drop was studied to reduce the internal stress of alloy target and conquer the easy cracking disadvantage of silicon-rich target. The electrical properties of sputtered thin film resistors were tested to evaluate the performance of the prepared target indirectly.

  4. Update for nurse anesthetists. The Starling resistor: a model for explaining and treating obstructive sleep apnea.

    Science.gov (United States)

    Stalford, Catherine B

    2004-04-01

    Recent epidemiological research places the incidence of obstructive sleep apnea as high as 16% in the general population. Serious postoperative respiratory complications and death have been reported in this population. Anesthetic drugs contribute to these complications secondary to acute and residual influences on the complex orchestration of airway muscles and reflexes involved in airway patency. The Starling resistor model is a theoretical model that has application in explaining upper airway dynamics and the treatment and management of obstructive sleep apnea. The model postulates the oropharynx as a collapsible tube. The oropharynx remains open or partially or completely closed as a result of pressure upstream at the nose and mouth, pressure downstream at the trachea and below, or tissue pressure surrounding the oropharynx. This AANA Journal course provides an overview of the Starling resistor model, its application to obstructive sleep apnea, and preoperative and postoperative anesthetic considerations.

  5. The role of feedback resistors and tid effects in the ASET response of a high speed current feedback amplifier

    International Nuclear Information System (INIS)

    Roig, F.; Dusseau, L.; Privat, A.; Vaille, J.R.; Boch, J.; Saigne, F.; Ribeiro, P.; Auriel, G.; Roche, N.J.H.; Marec, R.; Calvel, P.; Bezerra, F.; Ecoffet, R.; Azais, B.

    2014-01-01

    The influence of external circuit designs on ASET shapes in a high speed current feedback amplifier (CFA) (AD844) is investigated by means of the pulsed laser single event effect (PLSEE) simulation technique. Changes of the feedback resistors modify circuit's electrical parameters such as closed-loop gain and bandwidth, affecting amplifier stability and so ASET shapes. Qualitative explanations based on general electronic rules and feedback theories enable the understanding of a CFA operation establishing a correlation between the evolution of external feedback resistor values and ASET parameters. TID effects on the ASET sensitivity in AD844 CFA are also investigated in this work highlighting different behaviors according to the impacted bipolar transistor in the integrated circuit. (authors)

  6. Array of Chemosensitive Resistors with Composites of Gas Chromatography (GC) Materials and Carbon Black for Detection and Recognition of VOCs: A Basic Study

    Science.gov (United States)

    Wyszynski, Bartosz; Yatabe, Rui; Nakao, Atsuo; Nakatani, Masaya; Oki, Akio; Oka, Hiroaki; Toko, Kiyoshi

    2017-01-01

    Mimicking the biological olfaction, large odor-sensor arrays can be used to acquire a broad range of chemical information, with a potentially high degree of redundancy, to allow for enhanced control over the sensitivity and selectivity of artificial olfaction systems. The arrays should consist of the largest possible number of individual sensing elements while being miniaturized. Chemosensitive resistors are one of the sensing platforms that have a potential to satisfy these two conditions. In this work we test viability of fabricating a 16-element chemosensitive resistor array for detection and recognition of volatile organic compounds (VOCs). The sensors were fabricated using blends of carbon black and gas chromatography (GC) stationary-phase materials preselected based on their sorption properties. Blends of the selected GC materials with carbon black particles were subsequently coated over chemosensitive resistor devices and the resulting sensors/arrays evaluated in exposure experiments against vapors of pyrrole, benzenal, nonanal, and 2-phenethylamine at 150, 300, 450, and 900 ppb. Responses of the fabricated 16-element array were stable and differed for each individual odorant sample, proving the blends of GC materials with carbon black particles can be effectively used for fabrication of large odor-sensing arrays based on chemosensitive resistors. The obtained results suggest that the proposed sensing devices could be effective in discriminating odor/vapor samples at the sub-ppm level. PMID:28696353

  7. Compact chromium oxide thin film resistors for use in nanoscale quantum circuits

    Energy Technology Data Exchange (ETDEWEB)

    Nash, C. R.; Fenton, J. C.; Constantino, N. G. N.; Warburton, P. A. [London Centre for Nanotechnology, UCL, 17–19 Gordon Street, London WC1H 0AH (United Kingdom)

    2014-12-14

    We report on the electrical characterisation of a series of thin amorphous chromium oxide (CrO{sub x}) films, grown by dc sputtering, to evaluate their suitability for use as on-chip resistors in nanoelectronics. By increasing the level of oxygen doping, the room-temperature sheet resistance of the CrO{sub x} films was varied from 28 Ω/◻ to 32.6 kΩ/◻. The variation in resistance with cooling to 4.2 K in liquid helium was investigated; the sheet resistance at 4.2 K varied with composition from 65 Ω/◻ to above 20 GΩ/◻. All of the films measured displayed linear current–voltage characteristics at all measured temperatures. For on-chip devices for quantum phase-slip measurements using niobium–silicon nanowires, interfaces between niobium–silicon and chromium oxide are required. We also characterised the contact resistance for one CrO{sub x} composition at an interface with niobium–silicon. We found that a gold intermediate layer is favourable: the specific contact resistivity of chromium-oxide-to-gold interfaces was 0.14 mΩcm{sup 2}, much lower than the value for direct CrO{sub x} to niobium–silicon contact. We conclude that these chromium oxide films are suitable for use in nanoscale circuits as high-value resistors, with resistivity tunable by oxygen content.

  8. Microstructure and electrical properties of slug-type resistors based on B4C and TiC - ESCA - XPS and impedance spectroscopy investigations

    International Nuclear Information System (INIS)

    Klimiec, E.; Zaraska, W.; Stobiecki, T.; Bak, W.; Starzyk, F.

    2000-01-01

    The microstructure and electrical properties of slug-type resistors based on B 4 C and TiC were investigated. From XPS measurements was deducted that Ti in TiO 2 is in intermediate oxidation number between Ti +4 and Ti +3 . The impedance of both type of resistors is independent on frequency in the range from 10 3 to 10 4 Hz, only very subtle differences above 10 4 Hz are observed. The metallic type conductivity in TiC and semiconducting in B 4 C was established. (author)

  9. Cross-Bridge Kelvin resistor structures for reliable measurement of low contact resistances and contact interface characterization

    NARCIS (Netherlands)

    Stavitski, N.; Klootwijk, J.H.; van Zeijl, H.W.; Kovalgin, Alexeij Y.; Wolters, Robertus A.M.

    2009-01-01

    The parasitic factors that strongly influence the measurement accuracy of Cross-Bridge Kelvin Resistor (CBKR) structures for low specific contact resistances (�?�c) have been extensively discussed during last few decades and the minimum of the �?�c value, which could be accurately extracted, was

  10. Development of resistor assemblies at 14 UD pelletron accelerator facility BARC-TIFR, Mumbai

    International Nuclear Information System (INIS)

    Ramlal; Ekambaram, M.; Matkar, U.V.; Lokare, R.N.; Gore, J.A.; Tambwekar, V.V.; Kulkarni, S.G.; Gupta, A.K.; Bhagwat, P.V.; Kailas, S.; Karande, J.N.; Kurup, M.B.

    2002-01-01

    An important consideration in high voltage design of an electrostatic accelerator is the potential grading system used to divide the terminal potential equitably (or as required) across the column or tube electrode gaps. This is generally accomplished by tapping the electrode potentials from across a resistor-chain or from a series of corona gaps as in the Pelletron Accelerator. However, each potential grading system has its own set of advantages and disadvantages

  11. High linearity current communicating passive mixer employing a simple resistor bias

    International Nuclear Information System (INIS)

    Liu Rongjiang; Guo Guiliang; Yan Yuepeng

    2013-01-01

    A high linearity current communicating passive mixer including the mixing cell and transimpedance amplifier (TIA) is introduced. It employs the resistor in the TIA to reduce the source voltage and the gate voltage of the mixing cell. The optimum linearity and the maximum symmetric switching operation are obtained at the same time. The mixer is implemented in a 0.25 μm CMOS process. The test shows that it achieves an input third-order intercept point of 13.32 dBm, conversion gain of 5.52 dB, and a single sideband noise figure of 20 dB. (semiconductor integrated circuits)

  12. Carbon resistor pressure gauge calibration at low stresses

    International Nuclear Information System (INIS)

    Cunningham, Bruce; Vandersall, Kevin S.; Niles, Angela M.; Greenwood, Daniel W.; Garcia, Frank; Forbes, Jerry W.; Wilson, William H.

    2002-01-01

    The 470 Ohm carbon resistor gauge has been used in the stress range up to 4-5 GPa for highly heterogeneous materials and/or divergent flow experiments. The attractiveness of the gauge is its rugged nature, simple construction, low cost, reproducibility, and survivability in dynamic events. Gauge drawbacks are the long time response to pressure equilibration and gauge resistance hysteresis. In the regime below 0.4 GPa, gauge calibration has been extrapolated. Because of the need for calibration data within this low stress regime, calibration experiments were performed using a split-Hopkinson bar, drop tower apparatus, and gas pressure chamber. Since the performance of the gauge at elevated temperatures is a concern, the change in resistance due to heating at atmospheric pressure was also investigated. Details of the various calibration arrangements and the results are discussed and compared to a calibration curve fit to previously published calibration data

  13. Resistor-logic demultiplexers for nanoelectronics based on constant-weight codes.

    Science.gov (United States)

    Kuekes, Philip J; Robinett, Warren; Roth, Ron M; Seroussi, Gadiel; Snider, Gregory S; Stanley Williams, R

    2006-02-28

    The voltage margin of a resistor-logic demultiplexer can be improved significantly by basing its connection pattern on a constant-weight code. Each distinct code determines a unique demultiplexer, and therefore a large family of circuits is defined. We consider using these demultiplexers for building nanoscale crossbar memories, and determine the voltage margin of the memory system based on a particular code. We determine a purely code-theoretic criterion for selecting codes that will yield memories with large voltage margins, which is to minimize the ratio of the maximum to the minimum Hamming distance between distinct codewords. For the specific example of a 64 × 64 crossbar, we discuss what codes provide optimal performance for a memory.

  14. A novel charge sensitive preamplifier without the feedback resistor

    International Nuclear Information System (INIS)

    Bertuccio, G.

    1992-01-01

    A novel charge sensitive preamplifier which has no resistor in parallel with the feedback capacitor is presented. No external device or circuit is required to discharge the feedback capacitor. The detector leakage and signal current flows away through the gate of the first JFET which works with its gate to source junction slightly forward biased. The DC stabilization of the preamplifier is accomplished by an additional feedback loop, which permits to equalize the current flowing through the forward baised gate to source junction and the current coming from the detector. An equivalent noise charge of less than 20 electrons r.m.s. has been measured at room temperature by using an input JFET with a transconductance to gate capacitance ratio of 4 mS/5.4 pF

  15. Use of a Pre-Insertion Resistor to Minimize Zero-Missing Phenomenon and Switching Overvoltages

    DEFF Research Database (Denmark)

    Bak, Claus Leth; da Silva, Filipe Miguel Faria; Gudmundsdottir, Unnur Stella

    2009-01-01

    With the increasing use of High-Voltage Cables, which have different electric characteristics from Overhead Lines, phenomenon like current zero-missing start to appear more often on the transmission systems. Methods to prevent zero-missing phenomenon are still being studied and compared to see wh...... an optimal value of the resistance of the pre-insertion resistor that results in minimizing both the zero-missing phenomenon and switching overvoltages simultaneously....

  16. The classical Starling resistor model often does not predict inspiratory airflow patterns in the human upper airway.

    Science.gov (United States)

    Owens, Robert L; Edwards, Bradley A; Sands, Scott A; Butler, James P; Eckert, Danny J; White, David P; Malhotra, Atul; Wellman, Andrew

    2014-04-15

    The upper airway is often modeled as a classical Starling resistor, featuring a constant inspiratory airflow, or plateau, over a range of downstream pressures. However, airflow tracings from clinical sleep studies often show an initial peak before the plateau. To conform to the Starling model, the initial peak must be of small magnitude or dismissed as a transient. We developed a method to simulate fast or slow inspirations through the human upper airway, to test the hypothesis that this initial peak is a transient. Eight subjects [4 obstructive sleep apnea (OSA), 4 controls] slept in an "iron lung" and wore a nasal mask connected to a continuous/bilevel positive airway pressure machine. Downstream pressure was measured using an epiglottic catheter. During non-rapid eye movement (NREM) sleep, subjects were hyperventilated to produce a central apnea, then extrathoracic pressure was decreased slowly (∼2-4 s) or abruptly (resistor model, the upper airway exhibits marked NED in some subjects.

  17. Room-temperature antiferromagnetic memory resistor.

    Science.gov (United States)

    Marti, X; Fina, I; Frontera, C; Liu, Jian; Wadley, P; He, Q; Paull, R J; Clarkson, J D; Kudrnovský, J; Turek, I; Kuneš, J; Yi, D; Chu, J-H; Nelson, C T; You, L; Arenholz, E; Salahuddin, S; Fontcuberta, J; Jungwirth, T; Ramesh, R

    2014-04-01

    The bistability of ordered spin states in ferromagnets provides the basis for magnetic memory functionality. The latest generation of magnetic random access memories rely on an efficient approach in which magnetic fields are replaced by electrical means for writing and reading the information in ferromagnets. This concept may eventually reduce the sensitivity of ferromagnets to magnetic field perturbations to being a weakness for data retention and the ferromagnetic stray fields to an obstacle for high-density memory integration. Here we report a room-temperature bistable antiferromagnetic (AFM) memory that produces negligible stray fields and is insensitive to strong magnetic fields. We use a resistor made of a FeRh AFM, which orders ferromagnetically roughly 100 K above room temperature, and therefore allows us to set different collective directions for the Fe moments by applied magnetic field. On cooling to room temperature, AFM order sets in with the direction of the AFM moments predetermined by the field and moment direction in the high-temperature ferromagnetic state. For electrical reading, we use an AFM analogue of the anisotropic magnetoresistance. Our microscopic theory modelling confirms that this archetypical spintronic effect, discovered more than 150 years ago in ferromagnets, is also present in AFMs. Our work demonstrates the feasibility of fabricating room-temperature spintronic memories with AFMs, which in turn expands the base of available magnetic materials for devices with properties that cannot be achieved with ferromagnets.

  18. Versatile tunable current-mode universal biquadratic filter using MO-DVCCs and MOSFET-based electronic resistors.

    Science.gov (United States)

    Chen, Hua-Pin

    2014-01-01

    This paper presents a versatile tunable current-mode universal biquadratic filter with four-input and three-output employing only two multioutput differential voltage current conveyors (MO-DVCCs), two grounded capacitors, and a well-known method for replacement of three grounded resistors by MOSFET-based electronic resistors. The proposed configuration exhibits high-output impedance which is important for easy cascading in the current-mode operations. The proposed circuit can be used as either a two-input three-output circuit or a three-input single-output circuit. In the operation of two-input three-output circuit, the bandpass, highpass, and bandreject filtering responses can be realized simultaneously while the allpass filtering response can be easily obtained by connecting appropriated output current directly without using additional stages. In the operation of three-input single-output circuit, all five generic filtering functions can be easily realized by selecting different three-input current signals. The filter permits orthogonal controllability of the quality factor and resonance angular frequency, and no inverting-type input current signals are imposed. All the passive and active sensitivities are low. Postlayout simulations were carried out to verify the functionality of the design.

  19. Versatile Tunable Current-Mode Universal Biquadratic Filter Using MO-DVCCs and MOSFET-Based Electronic Resistors

    Directory of Open Access Journals (Sweden)

    Hua-Pin Chen

    2014-01-01

    Full Text Available This paper presents a versatile tunable current-mode universal biquadratic filter with four-input and three-output employing only two multioutput differential voltage current conveyors (MO-DVCCs, two grounded capacitors, and a well-known method for replacement of three grounded resistors by MOSFET-based electronic resistors. The proposed configuration exhibits high-output impedance which is important for easy cascading in the current-mode operations. The proposed circuit can be used as either a two-input three-output circuit or a three-input single-output circuit. In the operation of two-input three-output circuit, the bandpass, highpass, and bandreject filtering responses can be realized simultaneously while the allpass filtering response can be easily obtained by connecting appropriated output current directly without using additional stages. In the operation of three-input single-output circuit, all five generic filtering functions can be easily realized by selecting different three-input current signals. The filter permits orthogonal controllability of the quality factor and resonance angular frequency, and no inverting-type input current signals are imposed. All the passive and active sensitivities are low. Postlayout simulations were carried out to verify the functionality of the design.

  20. A novel water resistor divider with a coaxial low-voltage arm.

    Science.gov (United States)

    Jia, Wei; Chen, Weiqing; Mao, Congguang; Zeng, Jiangtao

    2010-03-01

    A new style high voltage resistor divider made of saline solution has been constructed and tested. A coaxial construction is used on the low-voltage arm, as the signal extraction electrode, which can increase the attenuation ratio of the divider. The time response of divider limited by the stray parameter also can be improved. Comparing the results of calibrated experiment with the commonly used equal size copper sulfate dividers, the new probe has nearly five times increase in the attenuation ratio. The time response of the new style divider in the dimension of 30 mm in diameter and 400 mm in length can reach to 1 ns.

  1. Designing a Signal Conditioning System with Software Calibration for Resistor-feedback Patch Clamp Amplifier.

    Science.gov (United States)

    Hu, Gang; Zhu, Quanhui; Qu, Anlian

    2005-01-01

    In this paper, a programmable signal conditioning system based on software calibration for resistor-feedback patch clamp amplifier (PCA) has been described, this system is mainly composed of frequency correction, programmable gain and filter whose parameters are configured by software automatically to minimize the errors, A lab-designed data acquisition system (DAQ) is used to implement data collections and communications with PC. The laboratory test results show good agreement with design specifications.

  2. Micromachined force sensors using thin film nickel–chromium piezoresistors

    International Nuclear Information System (INIS)

    Nadvi, Gaviraj S; Butler, Donald P; Çelik-Butler, Zeynep; Gönenli, İsmail Erkin

    2012-01-01

    Micromachined force/tactile sensors using nickel–chromium piezoresistors have been investigated experimentally and through finite-element analysis. The force sensors were designed with a suspended aluminum oxide (Al 2 O 3 ) membrane and optimally placed piezoresistors to measure the strain in the membrane when deflected with an applied force. Different devices, each with varying size and shape of both the membrane and the piezoresistors, were designed, fabricated and characterized. The piezoresistors were placed into a half-Wheatstone bridge configuration with two active and two passive nickel–chromium resistors to provide temperature drift compensation. The force sensors were characterized using a load cell and a nanopositioner to measure the sensor response with applied load. Piezoresistive gauge factors in the range of 1–5.2 have been calculated for the thin film nichrome (NiCr 80/20 wt%) from the measured results. The force sensors were calculated to have a noise equivalent force of 65–245 nN. (paper)

  3. Silicon avalanche photodiodes on the base of metal-resistor-semiconductor (MRS) structures

    CERN Document Server

    Saveliev, V

    2000-01-01

    The development of a high quantum efficiency, fast photodetector, with internal gain amplification for the wavelength range 450-600 nm is one of the critical issues for experimental physics - registration of low-intensity light photons flux. The new structure of Silicon Avalanche Detectors with high internal amplification (10 sup 5 -10 sup 6) has been designed, manufactured and tested for registration of visible light photons and charge particles. The main features of Metal-Resistor-Semiconductor (MRS) structures are the high charge multiplication in nonuniform electric field near the 'needle' pn-junction and negative feedback for stabilization of avalanche process due to resistive layer.

  4. Simulasi Dinamika untuk Menentukan Stabilitas Sistem Tenaga Listrik Menggunakan Thyristor Controlled Braking Resistor pada Sistem IEEE 34 Node Test Feeder

    Directory of Open Access Journals (Sweden)

    Andi Taufiq

    2012-09-01

    Full Text Available Terdapat berbagai macam metode untuk meningkatkan stabilitas sistem  tenaga listrik. Salah satunya adalah dengan menggunakan metode pengereman dinamis (dynamic braking. Generator sinkron sebagai distributed generator yang digerakkan oleh mesin diesel. Pada saat terjadi gangguan pada sistem, digunakan sebuah Thyristor Controlled Braking Resistor (TCBR untuk meredam osilasi yang terjadi. Sistem yang hendak dianalisis dinamika dan stabilitasnnya adalah IEEE 34 node test feeder. Dengan sistem ini diilustrasikan karakteristik dan keefektifan TCBR untuk meredam osilasi frekuensi rendah dan mencegah terjadinya ketidakstabilan transien sistem. Dari hasil analisis diperoleh bahwa dengan adanya penambahan TCBR (Thyristor Controlled Braking Resistor maka respon transien sistem akan menjadi lebih baik. Hal ini ditunjukkan dengan adanya penurunan overshoot dan settling timenya. Dengan demikian sistem akan menuju kondisi stabil dengan lebih cepat setelah terjadi gangguan.

  5. DVCCs Based High Input Impedance Voltage-Mode First-Order Filters Employing Grounded Capacitor and Resistor

    Directory of Open Access Journals (Sweden)

    J. W. Horng

    2010-12-01

    Full Text Available A voltage-mode high input impedance first-order highpass, lowpass and allpass filters using two differential voltage current conveyors (DVCCs, one grounded capacitor and one grounded resistor is presented. The highpass, lowpass and allpass signals can be obtained simultaneously from the circuit configuration. The suggested filter uses a canonical number of passive components without requiring any component matching condition. The simulation results confirm the theoretical analysis.

  6. High-performance and low-power rewritable SiOx 1 kbit one diode-one resistor crossbar memory array.

    Science.gov (United States)

    Wang, Gunuk; Lauchner, Adam C; Lin, Jian; Natelson, Douglas; Palem, Krishna V; Tour, James M

    2013-09-14

    An entire 1-kilobit crossbar device based upon SiOx resistive memories with integrated diodes has been made. The SiOx -based one diode-one resistor device system has promise to satisfy the prerequisite conditions for next generation non-volatile memory applications. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Conduction in rectangular quasi-one-dimensional and two-dimensional random resistor networks away from the percolation threshold.

    Science.gov (United States)

    Kiefer, Thomas; Villanueva, Guillermo; Brugger, Jürgen

    2009-08-01

    In this study we investigate electrical conduction in finite rectangular random resistor networks in quasione and two dimensions far away from the percolation threshold p(c) by the use of a bond percolation model. Various topologies such as parallel linear chains in one dimension, as well as square and triangular lattices in two dimensions, are compared as a function of the geometrical aspect ratio. In particular we propose a linear approximation for conduction in two-dimensional systems far from p(c), which is useful for engineering purposes. We find that the same scaling function, which can be used for finite-size scaling of percolation thresholds, also applies to describe conduction away from p(c). This is in contrast to the quasi-one-dimensional case, which is highly nonlinear. The qualitative analysis of the range within which the linear approximation is legitimate is given. A brief link to real applications is made by taking into account a statistical distribution of the resistors in the network. Our results are of potential interest in fields such as nanostructured or composite materials and sensing applications.

  8. Experimental verification of temperature coefficients of resistance for uniformly doped P-type resistors in SOI

    Science.gov (United States)

    Olszacki, M.; Maj, C.; Bahri, M. Al; Marrot, J.-C.; Boukabache, A.; Pons, P.; Napieralski, A.

    2010-06-01

    Many today's microsystems like strain-gauge-based piezoresistive pressure sensors contain doped resistors. If one wants to predict correctly the temperature impact on the performance of such devices, the accurate data about the temperature coefficients of resistance (TCR) are essential. Although such data may be calculated using one of the existing mobility models, our experiments showed that we can observe the huge mismatch between the calculated and measured values. Thus, in order to investigate the TCR values, a set of the test structures that contained doped P-type resistors was fabricated. As the TCR value also depends on the doping profile shape, we decided to use the very thin, 340 nm thick SOI wafers in order to fabricate the quasi-uniformly doped silicon layers ranging from 2 × 1017 at cm-3 to 1.6 × 1019 at cm-3. The results showed that the experimental data for the first-order TCR are quite far from the calculated ones especially over the doping range of 1018-1019 at cm-3 and quite close to the experimental ones obtained by Bullis about 50 years ago for bulk silicon. Moreover, for the first time, second-order coefficients that were not very consistent with the calculations were obtained.

  9. Experimental verification of temperature coefficients of resistance for uniformly doped P-type resistors in SOI

    International Nuclear Information System (INIS)

    Olszacki, M; Maj, C; Al Bahri, M; Marrot, J-C; Boukabache, A; Pons, P; Napieralski, A

    2010-01-01

    Many today's microsystems like strain-gauge-based piezoresistive pressure sensors contain doped resistors. If one wants to predict correctly the temperature impact on the performance of such devices, the accurate data about the temperature coefficients of resistance (TCR) are essential. Although such data may be calculated using one of the existing mobility models, our experiments showed that we can observe the huge mismatch between the calculated and measured values. Thus, in order to investigate the TCR values, a set of the test structures that contained doped P-type resistors was fabricated. As the TCR value also depends on the doping profile shape, we decided to use the very thin, 340 nm thick SOI wafers in order to fabricate the quasi-uniformly doped silicon layers ranging from 2 × 10 17 at cm −3 to 1.6 × 10 19 at cm −3 . The results showed that the experimental data for the first-order TCR are quite far from the calculated ones especially over the doping range of 10 18 –10 19 at cm −3 and quite close to the experimental ones obtained by Bullis about 50 years ago for bulk silicon. Moreover, for the first time, second-order coefficients that were not very consistent with the calculations were obtained.

  10. Interface analysis of embedded chip resistor device package and its effect on drop shock reliability.

    Science.gov (United States)

    Park, Se-Hoon; Kim, Sun Kyoung; Kim, Young-Ho

    2012-04-01

    In this study, the drop reliability of an embedded passive package is investigated under JESD22-B111 condition. Chip resistors were buried in a PCB board, and it was electrically interconnected by electroless and electrolytic copper plating on a tin pad of a chip resistor without intermetallic phase. However tin, nickel, and copper formed a complex intermetallic phase, such as (Cu, Ni)6Sn5, (Cu, Ni)3Sn, and (Ni, Cu)3Sn2, at the via interface and via wall after reflow and aging. Since the amount of the tin layer was small compared with the solder joint, excessive intermetallic layer growth was not observed during thermal aging. Drop failures are always initiated at the IMC interface, and as aging time increases Cu-Sn-Ni IMC phases are transformed continuously due to Cu diffusion. We studied the intermetallic formation of the Cu via interface and simulated the stress distribution of drop shock by using material properties and board structure of embedded passive boards. The drop simulation was conducted according to the JEDEC standard. It was revealed that the crack starting point related to failure fracture changed due to intermetallic phase transformation along the via interface, and the position where failure occurs experimentally agrees well with our simulation results.

  11. Elimination of voltage reversal in multiple membrane electrode assembly installed microbial fuel cells (mMEA-MFCs) stacking system by resistor control.

    Science.gov (United States)

    Kim, Bongkyu; Chang, In Seop

    2018-08-01

    Voltage reversal (VR) in series connection of multiple membrane electrode assembly installed microbial fuel cells (mMEA-MFC) is eliminated by manipulating the resistor control. Discharge test results collected from two mMEA-MFCs initially operated (designated as P1 and P2) confirm that the performance of P2 exceeds that of P1. Thus, driving P1 and P2 as serially stacked MFCs generate the VR in P1. Controlling the inserted resistor adjust the current production of P2 to maintain balance with P1, and the VR in P1 is eliminated in the operation of stacking mode. Thus, manipulating the internal resistance provide an applicable approach to suppress VR in the stacking of mMEA-MFCs system. Copyright © 2018 Elsevier Ltd. All rights reserved.

  12. Logarithmic corrections to scaling in critical percolation and random resistor networks.

    Science.gov (United States)

    Stenull, Olaf; Janssen, Hans-Karl

    2003-09-01

    We study the critical behavior of various geometrical and transport properties of percolation in six dimensions. By employing field theory and renormalization group methods we analyze fluctuation induced logarithmic corrections to scaling up to and including the next-to-leading order correction. Our study comprehends the percolation correlation function, i.e., the probability that two given points are connected, and some of the fractal masses describing percolation clusters. To be specific, we calculate the mass of the backbone, the red bonds, and the shortest path. Moreover, we study key transport properties of percolation as represented by the random resistor network. We investigate the average two-point resistance as well as the entire family of multifractal moments of the current distribution.

  13. Minimum spanning trees and random resistor networks in d dimensions.

    Science.gov (United States)

    Read, N

    2005-09-01

    We consider minimum-cost spanning trees, both in lattice and Euclidean models, in d dimensions. For the cost of the optimum tree in a box of size L , we show that there is a correction of order L(theta) , where theta or =1 . The arguments all rely on the close relation of Kruskal's greedy algorithm for the minimum spanning tree, percolation, and (for some arguments) random resistor networks. The scaling of the entropy and free energy at small nonzero T , and hence of the number of near-optimal solutions, is also discussed. We suggest that the Steiner tree problem is in the same universality class as the minimum spanning tree in all dimensions, as is the traveling salesman problem in two dimensions. Hence all will have the same value of theta=-3/4 in two dimensions.

  14. Alpha- and gamma-detection by the avalanche detectors with metal-resistor-semiconductor structure

    International Nuclear Information System (INIS)

    Vetokhin, S.S.; Evtushenko, V.P.; Zalesskij, V.B.; Malyshev, S.A.; Chudakov, V.A.; Shunevich, S.A.

    1992-01-01

    Possibility to use silicon avalanche photodetectors with metal-resistor-semiconductor structure with 0.12 cm 2 photosensitive area as detectors of α-particles, as well as, photodetector of γ-quanta scintillation detector is shown. When detection of α-particles the energy resolution reaches 10%. R energy resolution for avalanche photodetector-CsI(Tl) scintillator system cooled up to - 60 deg C at 59 keV ( 241 Am) and 662 keV ( 137 Cs) energy of γ-quanta constitutes 60% and 80%, respectively. R minimal value in the conducted experiments is determined by the degree of irregularity of avalanche amplification along the photodetector area

  15. Quantum resistor-capacitor circuit with Majorana fermion modes in a chiral topological superconductor.

    Science.gov (United States)

    Lee, Minchul; Choi, Mahn-Soo

    2014-08-15

    We investigate the mesoscopic resistor-capacitor circuit consisting of a quantum dot coupled to spatially separated Majorana fermion modes in a chiral topological superconductor. We find substantially enhanced relaxation resistance due to the nature of Majorana fermions, which are their own antiparticles and are composed of particle and hole excitations in the same abundance. Further, if only a single Majorana mode is involved, the zero-frequency relaxation resistance is completely suppressed due to a destructive interference. As a result, the Majorana mode opens an exotic dissipative channel on a superconductor which is typically regarded as dissipationless due to its finite superconducting gap.

  16. Two-point resistance of a resistor network embedded on a globe.

    Science.gov (United States)

    Tan, Zhi-Zhong; Essam, J W; Wu, F Y

    2014-07-01

    We consider the problem of two-point resistance in an (m-1) × n resistor network embedded on a globe, a geometry topologically equivalent to an m × n cobweb with its boundary collapsed into one single point. We deduce a concise formula for the resistance between any two nodes on the globe using a method of direct summation pioneered by one of us [Z.-Z. Tan, L. Zhou, and J. H. Yang, J. Phys. A: Math. Theor. 46, 195202 (2013)]. This method is contrasted with the Laplacian matrix approach formulated also by one of us [F. Y. Wu, J. Phys. A: Math. Gen. 37, 6653 (2004)], which is difficult to apply to the geometry of a globe. Our analysis gives the result in the form of a single summation.

  17. IDENTIFIKASI NILAI HAMBAT JENIS ARANG KAYU, ARANG KULIT MANGGA, DAN ARANG KULIT PISANG: BAHAN ALTERNATIF PENGGANTI RESISTOR FILM KARBON

    Directory of Open Access Journals (Sweden)

    Intan Kusumawati

    2014-05-01

    Full Text Available Penelitian ini bertujuan untuk mengetahui nilai hambat jenis pada arang kayu, arang kulit mangga, dan arang kulit pisang sebagai bahan alternatif pengganti resistor film karbon. Pada penelitian ini dilakukan penumbukkan arang kayu, arang kulit mangga, dan kulit pisang sehingga dihasilkan bubuk arang yang halus melalui proses penyaringan. Setelah itu dilakukan pemampatan arang kayu dalam pipet/sedotan plastik dengan luas permukaan (A = 4,08 x 10-4 cm. Kemudian hambatan diukur menggunakan multimeter dan dilakukan perhitungan hambat jenis arang tersebut. Hasil penelitian menunjukkan bahwa arang kayu (0,73 x 106 m memiliki nilai hambat yang tinggi sehingga hambat jenisnya juga lebih tinggi dibandingkan dengan arang kulit mangga (0,28 x 106  m dan arang kulit pisang (0,24 x 106 m. Hal ini dikarenakan terjadi proses karbonisasi sempurna dalam pembuatan arang kayu. Oleh karena nilai hambatan yang dapat terbaca pada multimeter hanya menggunakan batas skala yang besar (Mega Ohm, maka arang kulit kayu, arang kulit mangga, dan arang kulit pisang hanya dapat dijadikan sebagai bahan alternatif pengganti resistor film karbon dengan ukuran nilai hambatan besar.

  18. Calculating electronic tunnel currents in networks of disordered irregularly shaped nanoparticles by mapping networks to arrays of parallel nonlinear resistors

    Energy Technology Data Exchange (ETDEWEB)

    Aghili Yajadda, Mir Massoud [CSIRO Manufacturing Flagship, P.O. Box 218, Lindfield NSW 2070 (Australia)

    2014-10-21

    We have shown both theoretically and experimentally that tunnel currents in networks of disordered irregularly shaped nanoparticles (NPs) can be calculated by considering the networks as arrays of parallel nonlinear resistors. Each resistor is described by a one-dimensional or a two-dimensional array of equal size nanoparticles that the tunnel junction gaps between nanoparticles in each resistor is assumed to be equal. The number of tunnel junctions between two contact electrodes and the tunnel junction gaps between nanoparticles are found to be functions of Coulomb blockade energies. In addition, the tunnel barriers between nanoparticles were considered to be tilted at high voltages. Furthermore, the role of thermal expansion coefficient of the tunnel junction gaps on the tunnel current is taken into account. The model calculations fit very well to the experimental data of a network of disordered gold nanoparticles, a forest of multi-wall carbon nanotubes, and a network of few-layer graphene nanoplates over a wide temperature range (5-300 K) at low and high DC bias voltages (0.001 mV–50 V). Our investigations indicate, although electron cotunneling in networks of disordered irregularly shaped NPs may occur, non-Arrhenius behavior at low temperatures cannot be described by the cotunneling model due to size distribution in the networks and irregular shape of nanoparticles. Non-Arrhenius behavior of the samples at zero bias voltage limit was attributed to the disorder in the samples. Unlike the electron cotunneling model, we found that the crossover from Arrhenius to non-Arrhenius behavior occurs at two temperatures, one at a high temperature and the other at a low temperature.

  19. Microstructure development in RuO2-glass thick-film resistors and its effect on the electrical resistivity

    International Nuclear Information System (INIS)

    Yamaguchi, T.; Iizuka, K.

    1990-01-01

    Microstructure development in RuO 2 -glass thick-film resistors has been studied by optical microscopy with special emphasis on the effect of glass particle size and mixing and firing conditions. The microstructure development has been characterized by the coalescence of glass grains, infiltration of glass into RuO 2 particle aggregates, and agglomeration of RuO 2 particles. The resistivity-firing temperature relationship has been correlated with the microstructure development

  20. Current redistribution in resistor networks: Fat-tail statistics in regular and small-world networks.

    Science.gov (United States)

    Lehmann, Jörg; Bernasconi, Jakob

    2017-03-01

    The redistribution of electrical currents in resistor networks after single-bond failures is analyzed in terms of current-redistribution factors that are shown to depend only on the topology of the network and on the values of the bond resistances. We investigate the properties of these current-redistribution factors for regular network topologies (e.g., d-dimensional hypercubic lattices) as well as for small-world networks. In particular, we find that the statistics of the current redistribution factors exhibits a fat-tail behavior, which reflects the long-range nature of the current redistribution as determined by Kirchhoff's circuit laws.

  1. Comparison of three resistor network division circuits for the readout of 4×4 pixel SiPM arrays

    International Nuclear Information System (INIS)

    Stratos, David; Maria, Georgiou; Eleftherios, Fysikopoulos; George, Loudos

    2013-01-01

    The purpose of this study is to investigate the behavior of a flexible SensL's silicon photomultiplier array (SPMArray4) photodetector for possible applications in PET imaging. We have designed and evaluated three different resistor network division circuits to read out the signal outputs of a 4×4 pixel SiPM array. We have applied firstly (i) a symmetric resistive voltage division circuit, secondly (ii) a symmetric resistive charge division circuit and thirdly (iii) a charge division multiplexing resistor network reducing the 16 pixel outputs to 4 position signals. In the first circuit the SensL SPMArray4-A0 preamplification electronics and a SPMArray4-A1 evaluation board providing the 16 pixels voltage outputs were used, before the symmetric resistive voltage network. We reduced the 16 voltage signals firstly to 4X and 4Y coordinate signals. Then those signals were further reduced to 2X and 2Y position signals connected via a resistor network. In the second readout circuit we have used the same technique but without the preamplification stage. The third circuit is based on a discretized positioning circuit, which multiplexes the 16 signals from the SiPM array to 4 position signals. The 4 position signals (Xa, Xb, Yc and Yd) were digitized using a free running sampling technique. An FPGA (Spartan 6 LX16) was used for triggering and signal processing of the pulses. We acquired raw images and energy histograms of a BGO and a CsI:Na pixilated scintillator under 22 Na excitation. A clear visualization of the discrete 2×2×5 mm 3 pixilated BGO scintillator elements as well as the 1×1×5 mm 3 pixilated CsI:Na crystal array was achieved with all applied readout circuits. The symmetric resistive charge division circuit provides higher peak to valley ratio than the other readout circuits. Τhe sensitivity and the energy resolution remained almost constant for the three circuits

  2. Degradation of GaAs/AlGaAs Quantized Hall Resistors With Alloyed AuGe/Ni Contacts

    OpenAIRE

    Lee, Kevin C.

    1998-01-01

    Careful testing over a period of 6 years of a number of GaAs/AlGaAs quantized Hall resistors (QHR) made with alloyed AuGe/Ni contacts, both with and without passivating silicon nitride coatings, has resulted in the identification of important mechanisms responsible for degradation in the performance of the devices as resistance standards. Covering the contacts with a film, such as a low-temperature silicon nitride, that is impervious to humidity and other contaminants in the atmosphere preven...

  3. Nanoelectronics «bottom – up»: current generation, generalized Ohm’s law, elastic resistors, conductivity modes, thermoelectricity

    Directory of Open Access Journals (Sweden)

    Юрій Олексійович Кругляк

    2015-07-01

    Full Text Available General questions of electronic conductivity, current generation with the use of electrochemical potentials and Fermi functions, elastic resistor model, ballistic and diffusion transport, conductivity modes, n- and p-conductors and graphene, formulation of the generalized Ohm’s law, thermoelectric phenomena of Seebeck and Peltier, quality indicators and thermoelectric optimization, ballistic and diffusive phonon heat current are discussed in the frame of the «bottom – up» approach of modern nanoelectronics

  4. Model of 1/f noise in ion implanted resistors as a function of the resistance, determined by a reverse bias voltage

    International Nuclear Information System (INIS)

    Beck, H.G.E.

    1979-01-01

    A model is presented for the 1/f noise in ion-implanted resistors. The resistance was changed by a reverse bias voltage. The model explains the experimentally found square dependence between the relative 1/f noise intensity C/C 0 and the relative change in resistance R/R 0 . (author)

  5. Experimental Modeling of Monolithic Resistors for Silicon ICS with a Robust Optimizer-Driving Scheme

    Directory of Open Access Journals (Sweden)

    Philippe Leduc

    2002-06-01

    Full Text Available Today, an exhaustive library of models describing the electrical behavior of integrated passive components in the radio-frequency range is essential for the simulation and optimization of complex circuits. In this work, a preliminary study has been done on Tantalum Nitride (TaN resistors integrated on silicon, and this leads to a single p-type lumped-element circuit. An efficient extraction technique will be presented to provide a computer-driven optimizer with relevant initial model parameter values (the "guess-timate". The results show the unicity in most cases of the lumped element determination, which leads to a precise simulation of self-resonant frequencies.

  6. A Novel Read Scheme for Large Size One-Resistor Resistive Random Access Memory Array.

    Science.gov (United States)

    Zackriya, Mohammed; Kittur, Harish M; Chin, Albert

    2017-02-10

    The major issue of RRAM is the uneven sneak path that limits the array size. For the first time record large One-Resistor (1R) RRAM array of 128x128 is realized, and the array cells at the worst case still have good Low-/High-Resistive State (LRS/HRS) current difference of 378 nA/16 nA, even without using the selector device. This array has extremely low read current of 9.7 μA due to both low-current RRAM device and circuit interaction, where a novel and simple scheme of a reference point by half selected cell and a differential amplifier (DA) were implemented in the circuit design.

  7. Integrated one diode-one resistor architecture in nanopillar SiOx resistive switching memory by nanosphere lithography.

    Science.gov (United States)

    Ji, Li; Chang, Yao-Feng; Fowler, Burt; Chen, Ying-Chen; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chen, Min-Chen; Chang, Ting-Chang; Sze, Simon M; Yu, Edward T; Lee, Jack C

    2014-02-12

    We report on a highly compact, one diode-one resistor (1D-1R) nanopillar device architecture for SiOx-based ReRAM fabricated using nanosphere lithography (NSL). The intrinsic SiOx-based resistive switching element and Si diode are self-aligned on an epitaxial silicon wafer using NSL and a deep-Si-etch process without conventional photolithography. AC-pulse response in 50 ns regime, multibit operation, and good reliability are demonstrated. The NSL process provides a fast and economical approach to large-scale patterning of high-density 1D-1R ReRAM with good potential for use in future applications.

  8. Effects of skull thickness, anisotropy, and inhomogeneity on forward EEG/ERP computations using a spherical three-dimensional resistor mesh model.

    Science.gov (United States)

    Chauveau, Nicolas; Franceries, Xavier; Doyon, Bernard; Rigaud, Bernard; Morucci, Jean Pierre; Celsis, Pierre

    2004-02-01

    Bone thickness, anisotropy, and inhomogeneity have been reported to induce important variations in electroencephalogram (EEG) scalp potentials. To study this effect, we used an original three-dimensional (3-D) resistor mesh model described in spherical coordinates, consisting of 67,464 elements and 22,105 nodes arranged in 36 different concentric layers. After validation of the model by comparison with the analytic solution, potential variations induced by geometric and electrical skull modifications were investigated at the surface in the dipole plane and along the dipole axis, for several eccentricities and bone thicknesses. The resistor mesh permits one to obtain various configurations, as local modifications are introduced very easily. This has allowed several head models to be designed to study the effects of skull properties (thickness, anisotropy, and heterogeneity) on scalp surface potentials. Results show a decrease of potentials in bone, depending on bone thickness, and a very small decrease through the scalp layer. Nevertheless, similar scalp potentials can be obtained using either a thick scalp layer and a thin skull layer, and vice versa. It is thus important to take into account skull and scalp thicknesses, because the drop of potential in bone depends on both. The use of three different layers for skull instead of one leads to small differences in potential values and patterns. In contrast, the introduction of a hole in the skull highly increases the maximum potential value (by a factor of 11.5 in our case), because of the absence of potential drop in the corresponding volume. The inverse solution without any a priori knowledge indicates that the model with the hole gives the largest errors in both position and dipolar moment. Our results indicate that the resistor mesh model can be used as a robust and user-friendly simulation tool in EEG or event-related potentials. It makes it possible to build up real head models directly from anatomic magnetic

  9. Low temperature gaseous nitriding of Ni based superalloys

    DEFF Research Database (Denmark)

    Eliasen, K. M.; Christiansen, Thomas Lundin; Somers, Marcel A. J.

    2010-01-01

    In the present work the nitriding response of selected Ni based superalloys at low temperatures is addressed. The alloys investigated are nimonic series nos. 80, 90, 95 and 100 and nichrome (Ni/Cr......In the present work the nitriding response of selected Ni based superalloys at low temperatures is addressed. The alloys investigated are nimonic series nos. 80, 90, 95 and 100 and nichrome (Ni/Cr...

  10. Characteristics research of pressure sensor based on nanopolysilicon thin films resistors

    Science.gov (United States)

    Zhao, Xiaofeng; Li, Dandan; Wen, Dianzhong

    2017-10-01

    To further improve the sensitivity temperature characteristics of pressure sensor, a kind of pressure sensor taking nanopolysilicon thin films as piezoresistors is proposed in this paper. On the basis of the microstructure analysis by X-ray diffraction (XRD) and scanning electron microscope (SEM) tests, the preparing process of nanopolysilicon thin films is optimized. The effects of film thickness and annealing temperature on the micro-structure of nanopolysilicon thin films were studied, respectively. In order to realize the measurement of external pressure, four nanopolysilicon thin films resistors were arranged at the edges of square silicon diaphragm connected to a Wheatstone bridge, and the chip of the sensor was designed and fabricated on a 〈100〉 orientation silicon wafer by microelectromechanical system (MEMS) technology. Experimental result shows that when I = 6.80 mA, the sensitivity of the sensor PS-1 is 0.308 mV/kPa, and the temperature coefficient of sensitivity (TCS) is about -1742 ppm/∘C in the range of -40-140∘C. It is possible to obviously improve the sensitivity temperature characteristics of pressure sensor by the proposed sensors.

  11. Combined TiN- and TaN temperature compensated thin film resistors

    International Nuclear Information System (INIS)

    Malmros, Anna; Andersson, Kristoffer; Rorsman, Niklas

    2012-01-01

    The opposite signs of the temperature coefficient of resistance (TCR) of two thin film materials, titanium nitride (TiN) and tantalum nitride (TaN), were used to form temperature compensated thin film resistors (TFRs). The principle of designing temperature compensated TFRs by connecting TFRs of each compound in series or in parallel was demonstrated. TiN, TaN, and combined TiN and TaN TFRs for monolithic microwave integrated circuits (MMICs) were fabricated by reactive sputtering. DC characterization was performed over the temperature range of 30–200 °C. The TiN TFRs exhibited an increase in resistivity with temperature with TCRs of 540 and 750 ppm/°C. The TaN TFR on the other hand exhibited a negative TCR of − 470 ppm/°C. The shunted TFRs were fabricated by serial deposition of TiN and TaN to form a bilayer component. The TCRs of the series- and shunt configurations were experimentally reduced to − 60 and 100 ppm/°C, respectively. The concept of temperature compensation was used to build a Wheatstone bridge with an application in on-chip temperature sensing.

  12. The 'emergent scaling' phenomenon and the dielectric properties of random resistor-capacitor networks

    CERN Document Server

    Bouamrane, R

    2003-01-01

    An efficient algorithm, based on the Frank-Lobb reduction scheme, for calculating the equivalent dielectric properties of very large random resistor-capacitor (R-C) networks has been developed. It has been used to investigate the network size and composition dependence of dielectric properties and their statistical variability. The dielectric properties of 256 samples of random networks containing: 512, 2048, 8192 and 32 768 components distributed randomly in the ratios 60% R-40% C, 50% R-50% C and 40% R-60% C have been computed. It has been found that these properties exhibit the anomalous power law dependences on frequency known as the 'universal dielectric response' (UDR). Attention is drawn to the contrast between frequency ranges across which percolation determines dielectric response, where considerable variability is found amongst the samples, and those across which power laws define response where very little variability is found between samples. It is concluded that the power law UDRs are emergent pr...

  13. Carbon film resistor electrode for amperometric determination of acetaminophen in pharmaceutical formulations.

    Science.gov (United States)

    Felix, Fabiana S; Brett, Christopher M A; Angnes, Lúcio

    2007-04-11

    Flow injection analysis (FIA) with amperometric detection was employed for acetaminophen quantification in pharmaceutical formulations using a carbon film resistor electrode. This sensor exhibited sharp and reproducible current peaks for acetaminophen without chemical modification of its surface. A wide linear working range (8.0x10(-7) to 5.0x10(-4) mol L(-1)) in phosphate buffer solution as well as high sensitivity (0.143 A mol(-1) L cm(-2)) and low submicromolar detection limit (1.36x10(-7) mol L(-1)) were achieved. The repeatability (R.S.D. for 10 successive injections of 5.0x10(-6) and 5.0x10(-5) mol L(-1) acetaminophen solutions) was 3.1 and 1.3%, respectively, without any memory effect between injections. The new procedure was applied to the analyses of commercial pharmaceutical products and the results were in good agreement with those obtained utilizing a spectrophotometric method. Consequently, this amperometric method has been shown to be very suitable for quality control analyses and other applications with similar requirements.

  14. Force Sensing Resistor and Evaluation of Technology for Wearable Body Pressure Sensing

    Directory of Open Access Journals (Sweden)

    Davide Giovanelli

    2016-01-01

    Full Text Available Wearable technologies are gaining momentum and widespread diffusion. Thanks to devices such as activity trackers, in form of bracelets, watches, or anklets, the end-users are becoming more and more aware of their daily activity routine, posture, and training and can modify their motor-behavior. Activity trackers are prevalently based on inertial sensors such as accelerometers and gyroscopes. Loads we bear with us and the interface pressure they put on our body also affect posture. A contact interface pressure sensing wearable would be beneficial to complement inertial activity trackers. What is precluding force sensing resistors (FSR to be the next best seller wearable? In this paper, we provide elements to answer this question. We build an FSR based on resistive material (Velostat and printed conductive ink electrodes on polyethylene terephthalate (PET substrate; we test its response to pressure in the range 0–2.7 kPa. We present a state-of-the-art review, filtered by the need to identify technologies adequate for wearables. We conclude that the repeatability is the major issue yet unsolved.

  15. Highly tunable local gate controlled complementary graphene device performing as inverter and voltage controlled resistor.

    Science.gov (United States)

    Kim, Wonjae; Riikonen, Juha; Li, Changfeng; Chen, Ya; Lipsanen, Harri

    2013-10-04

    Using single-layer CVD graphene, a complementary field effect transistor (FET) device is fabricated on the top of separated back-gates. The local back-gate control of the transistors, which operate with low bias at room temperature, enables highly tunable device characteristics due to separate control over electrostatic doping of the channels. Local back-gating allows control of the doping level independently of the supply voltage, which enables device operation with very low VDD. Controllable characteristics also allow the compensation of variation in the unintentional doping typically observed in CVD graphene. Moreover, both p-n and n-p configurations of FETs can be achieved by electrostatic doping using the local back-gate. Therefore, the device operation can also be switched from inverter to voltage controlled resistor, opening new possibilities in using graphene in logic circuitry.

  16. Study on transient stability of asynchronous wind turbine based on series dynamic braking resistor%基于串联动态制动电阻的异步风电机组暂态稳定性研究

    Institute of Scientific and Technical Information of China (English)

    肖兰; 赵斌; 李建; 范镇南

    2011-01-01

    以并网笼型异步风电机组为例,分析了利用串联动态制动电阻提高并网异步风电机组在电网故障下暂态稳定性的作用机理以及效果.建立了并网异步风电机组的数学模型,基于Matlab/Simulink仿真平台,对比分析了采用串联动态制动电阻、并联动态制动电阻以及无功补偿装置的作用效果.仿真结果表明,采用串联动态制动电阻可以有效改善并网异步风力发电机组的暂态稳定性;同时,采用串联动态制动电阻和无功补偿装置,可显著提高机组的暂态稳定性,减少对无功补偿的需求,降低风电场的运行成本.%Take the squirrel-cage type asynchronous wind turbine as example, the mechanism and efficiency of the improvement on the transient stability of wind turbine with grid-connected used by series dynamic braking resistor under the power grid fault is analyzed, the mathematical model of asynchronous wind turbine.with grid-connected is established, the transient behaviors of the wind turbine generator system using series dynamic breaking resistor, parallel dynamic breaking resistor and reactive compensation device are analyzed and compared based on Matlab/Simulink,. The simulation results have shown that the series dynamic breaking resistor can effectively improve the transient stability of asynchronous wind turbine system. Using series dynamic breaking resistor and reactive compensation device simultaneously can improve the transient stability of wind turbine generator system significantly , which reducing the reactive compensation requirement and cost of wind farm.

  17. Directly writing resistor, inductor and capacitor to composite functional circuits: a super-simple way for alternative electronics.

    Science.gov (United States)

    Gao, Yunxia; Li, Haiyan; Liu, Jing

    2013-01-01

    The current strategies for making electronic devices are generally time, water, material and energy consuming. Here, the direct writing of composite functional circuits through comprehensive use of GaIn10-based liquid metal inks and matching material is proposed and investigated, which is a rather easy going and cost effective electronics fabrication way compared with the conventional approaches. Owing to its excellent adhesion and electrical properties, the liquid metal ink was demonstrated as a generalist in directly making various basic electronic components such as planar resistor, inductor and capacitor or their combination and thus composing circuits with expected electrical functions. For a precise control of the geometric sizes of the writing, a mask with a designed pattern was employed and demonstrated. Mechanisms for justifying the chemical components of the inks and the magnitudes of the target electronic elements so as to compose various practical circuits were disclosed. Fundamental tests on the electrical components including capacitor and inductor directly written on paper with working time up to 48 h and elevated temperature demonstrated their good stability and potential widespread adaptability especially when used in some high frequency circuits. As the first proof-of-concept experiment, a typical functional oscillating circuit including an integrated chip of 74HC04 with a supply voltage of 5 V, a capacitor of 10 nF and two resistors of 5 kΩ and 1 kΩ respectively was directly composed on paper through integrating specific electrical elements together, which presented an oscillation frequency of 8.8 kHz. The present method significantly extends the roles of the metal ink in recent works serving as only a single electrical conductor or interconnecting wires. It opens the way for directly writing out complex functional circuits or devices on different substrates. Such circuit composition strategy has generalized purpose and can be extended to more

  18. Internal resistor of multi-functional tunnel barrier for selectivity and switching uniformity in resistive random access memory.

    Science.gov (United States)

    Lee, Sangheon; Woo, Jiyong; Lee, Daeseok; Cha, Euijun; Hwang, Hyunsang

    2014-01-01

    In this research, we analyzed the multi-functional role of a tunnel barrier that can be integrated in devices. This tunnel barrier, acting as an internal resistor, changes its resistance with applied bias. Therefore, the current flow in the devices can be controlled by a tunneling mechanism that modifies the tunnel barrier thickness for non-linearity and switching uniformity of devices. When a device is in a low-resistance state, the tunnel barrier controls the current behavior of the device because most of the bias is applied to the tunnel barrier owing to its higher resistance. Furthermore, the tunnel barrier induces uniform filament formation during set operation with the tunnel barrier controlling the current flow.

  19. Noise properties of Pb/Cd-free thick film resistors

    International Nuclear Information System (INIS)

    Stadler, Adam Witold; Kolek, Andrzej; Zawislak, Zbigniew; Mleczko, Krzysztof; Jakubowska, Malgorzata; Kielbasinski, Konrad Rafal; Mlozniak, Anna

    2010-01-01

    Low-frequency noise spectroscopy has been used to examine noise properties of Pb/Cd-free RuO 2 - and CaRuO 3 -based thick films screen printed on alumina substrates. Experiments were performed in the temperature range 77-300 K and the frequency range 0.5-5000 Hz with multiterminal devices. The measured noise has been recognized as resistance noise that consists of background 1/f noise and components generated by several thermally activated noise sources (TANSs) of different activation energies. The total noise has been composed of the contributions generated in the resistive layer and in the resistive/conductive layers interface. These noise sources are non-uniformly distributed in the resistor volume. Noise intensity of new-resistive layers has been described by the noise parameter C bulk . Pb/Cd-free layers turned out to be noisier than their Pb-containing counterparts; however, the removal of Pb and Cd from resistive composition is hardly responsible for the increase in the noise. In the case of RuO 2 layers noise increases most likely due to larger grain size of RuO 2 powder used to prepare resistive pastes. Information on the quality of the resistive-to-conductive layers interface occurred to be stored in the values of noise parameter C int . Pb/Cd-free RuO 2 -based resistive pastes form well-behaved interfaces with various Ag-based conductive pastes. In contrast, CaRuO 3 -based paste forms bad contacts with AgPd terminations because the density of TANSs increases in the interface area.

  20. Doped nanocrystalline ZnO powders for non-linear resistor applications by spray pyrolysis method.

    Science.gov (United States)

    Hembram, Kaliyan; Vijay, R; Rao, Y S; Rao, T N

    2009-07-01

    Homogeneous and doped nanocrystalline ZnO powders (30-200 nm) were synthesized by spray pyrolysis technique. The spray pyrolysed powders were calcined in the temperature range of 500-750 degrees C. Formation of insulating pyrochlore phase started from 700 degrees C during the calcination itself. The calcined powders were compacted and sintered at different temperatures ranging from 900-1200 degrees C for 0.5-4 h. The densification behavior was found to be dependent on calcination temperature of the nanopowder. The resulting discs were found to have density (5.34-5.62 g/cc) in the range of 96-99% of theoretical density. The breakdown voltage value obtained for the nanopowder based non-linear resistor is 10.3 kV/cm with low leakage current density of 0.7 microA/cm2 and coefficient of nonlinearity as high as 193. The activation energy for grain growth of the doped ZnO nanopowder powders is 449.4 +/- 15 kJ/mol.

  1. Three-dimensional random resistor-network model for solid oxide fuel cell composite electrodes

    International Nuclear Information System (INIS)

    Abbaspour, Ali; Luo Jingli; Nandakumar, K.

    2010-01-01

    A three-dimensional reconstruction of solid oxide fuel cell (SOFC) composite electrodes was developed to evaluate the performance and further investigate the effect of microstructure on the performance of SOFC electrodes. Porosity of the electrode is controlled by adding pore former particles (spheres) to the electrode and ignoring them in analysis step. To enhance connectivity between particles and increase the length of triple-phase boundary (TPB), sintering process is mimicked by enlarging particles to certain degree after settling them inside the packing. Geometrical characteristics such as length of TBP and active contact area as well as porosity can easily be calculated using the current model. Electrochemical process is simulated using resistor-network model and complete Butler-Volmer equation is used to deal with charge transfer process on TBP. The model shows that TPBs are not uniformly distributed across the electrode and location of TPBs as well as amount of electrochemical reaction is not uniform. Effects of electrode thickness, particle size ratio, electron and ion conductor conductivities and rate of electrochemical reaction on overall electrochemical performance of electrode are investigated.

  2. Modeling error and stability of endothelial cytoskeletal membrane parameters based on modeling transendothelial impedance as resistor and capacitor in series.

    Science.gov (United States)

    Bodmer, James E; English, Anthony; Brady, Megan; Blackwell, Ken; Haxhinasto, Kari; Fotedar, Sunaina; Borgman, Kurt; Bai, Er-Wei; Moy, Alan B

    2005-09-01

    Transendothelial impedance across an endothelial monolayer grown on a microelectrode has previously been modeled as a repeating pattern of disks in which the electrical circuit consists of a resistor and capacitor in series. Although this numerical model breaks down barrier function into measurements of cell-cell adhesion, cell-matrix adhesion, and membrane capacitance, such solution parameters can be inaccurate without understanding model stability and error. In this study, we have evaluated modeling stability and error by using a chi(2) evaluation and Levenberg-Marquardt nonlinear least-squares (LM-NLS) method of the real and/or imaginary data in which the experimental measurement is compared with the calculated measurement derived by the model. Modeling stability and error were dependent on current frequency and the type of experimental data modeled. Solution parameters of cell-matrix adhesion were most susceptible to modeling instability. Furthermore, the LM-NLS method displayed frequency-dependent instability of the solution parameters, regardless of whether the real or imaginary data were analyzed. However, the LM-NLS method identified stable and reproducible solution parameters between all types of experimental data when a defined frequency spectrum of the entire data set was selected on the basis of a criterion of minimizing error. The frequency bandwidth that produced stable solution parameters varied greatly among different data types. Thus a numerical model based on characterizing transendothelial impedance as a resistor and capacitor in series and as a repeating pattern of disks is not sufficient to characterize the entire frequency spectrum of experimental transendothelial impedance.

  3. Ion-implanted capacitively coupled silicon strip detectors with integrated polysilicon bias resistors processed on a 100 mm wafer

    International Nuclear Information System (INIS)

    Hietanen, I.; Lindgren, J.; Orava, R.; Tuuva, T.; Voutilainen, M.; Brenner, R.; Andersson, M.; Leinonen, K.; Ronkainen, H.

    1991-01-01

    Double-sided silicon strip detectors with integrated coupling capacitors and polysilicon resistors have been processed on a 100 mm wafer. A detector with an active area of 19x19 mm 2 was connected to LSI readout electronics and tested. The strip pitch of the detector is 25 μm on the p-side and 50 μm on the n-side. The readout pitch is 50 μm on both sides. The number of readout strips is 774 and the total number of strips is 1161. On the p-side a signal-to-noise of 35 has been measured using a 90 Sr β-source. The n-side has been studied using a laser. (orig.)

  4. Development and characterisation of silicon photomultipliers with bulk-integrated quench resistors for future applications in particle and astroparticle physics

    International Nuclear Information System (INIS)

    Jendrysik, Christian

    2014-01-01

    This thesis deals with the development and characterisation of a novel silicon photomultiplier concept with bulk-integrated quench resistors. The approach allows the realisation of a free entrance window and high fill factors, which leads to an improvement of the detection efficiency. With first prototype productions a proof of concept was possible. A full characterisation provided promising results, in particular with respect to the photon detection efficiency. By customising the simulation tools, a reliable description of the devices was achieved. In addition, conceptual studies of the next device generation demonstrated the possibility of single cell readout, expanding the application range of those detectors to particle tracking.

  5. Effect of electric-spark alloying and subsequent annealing on the thermal stability of metallic structural materials

    International Nuclear Information System (INIS)

    Vdovin, S.F.; Reshetnikov, S.M.

    2000-01-01

    The effect of annealing on resistive properties of electric-spark coatings on the carbon steels is studied. The steels 10 and 20 samples with electric spark coatings of various compositions and control ones without annealing and coating are chosen for the study. The steels cr27 and 12cr18ni10ti, the nichrome (cr20ni80) alloy, aluminium as well as compositions of these materials: aluminium + cr27 and aluminium + nichrome were used as coating materials. It is shown that aluminium coatings increase the steel 10 heat resistance more them by 4 times, the aluminium + nichrome coatings - more than by 6 times and aluminium + cr27 coatings - more than by 6 times. In contrast to the electric-spark coating of the carbon steel surface by chromium-nickel alloys, the composition aluminium-containing coatings with annealing in vacuum provide for reliability of long-term protection of these steels from air oxidation with the temperature above the aluminium melting [ru

  6. Directly writing resistor, inductor and capacitor to composite functional circuits: a super-simple way for alternative electronics.

    Directory of Open Access Journals (Sweden)

    Yunxia Gao

    Full Text Available BACKGROUND: The current strategies for making electronic devices are generally time, water, material and energy consuming. Here, the direct writing of composite functional circuits through comprehensive use of GaIn10-based liquid metal inks and matching material is proposed and investigated, which is a rather easy going and cost effective electronics fabrication way compared with the conventional approaches. METHODS: Owing to its excellent adhesion and electrical properties, the liquid metal ink was demonstrated as a generalist in directly making various basic electronic components such as planar resistor, inductor and capacitor or their combination and thus composing circuits with expected electrical functions. For a precise control of the geometric sizes of the writing, a mask with a designed pattern was employed and demonstrated. Mechanisms for justifying the chemical components of the inks and the magnitudes of the target electronic elements so as to compose various practical circuits were disclosed. RESULTS: Fundamental tests on the electrical components including capacitor and inductor directly written on paper with working time up to 48 h and elevated temperature demonstrated their good stability and potential widespread adaptability especially when used in some high frequency circuits. As the first proof-of-concept experiment, a typical functional oscillating circuit including an integrated chip of 74HC04 with a supply voltage of 5 V, a capacitor of 10 nF and two resistors of 5 kΩ and 1 kΩ respectively was directly composed on paper through integrating specific electrical elements together, which presented an oscillation frequency of 8.8 kHz. CONCLUSIONS: The present method significantly extends the roles of the metal ink in recent works serving as only a single electrical conductor or interconnecting wires. It opens the way for directly writing out complex functional circuits or devices on different substrates. Such circuit

  7. Accurate calibration of resistance ratios between 1 MΩ and 1 GΩ using series resistors

    International Nuclear Information System (INIS)

    Yu, Kwang Min; Ihm, G

    2011-01-01

    As shown in high-resistance key comparisons carried out by the Consultative Committee for Electricity and Magnetism (CCEM), Inter-American Metrology System (SIM) and European Association of National Metrology Institutes (EURAMET), the accuracy of 10 MΩ and 1 GΩ resistances depends on ratio values between the reference resistance and unknown resistance and the accuracy of the reference resistance, which is determined with a quantized Hall resistance standard. This paper presents a method for calibrating 10:1 ratios in a high-resistance bridge using series resistors simply and accurately. By applying the 10:1 ratio errors determined using the presented method, the combined relative standard uncertainty for 1 GΩ resistance measurements using a modified Wheatstone bridge was estimated to be on the 1 × 10 −6 level. The method was also applied to 1 GΩ resistance measurements using a direct-current comparator resistance bridge. It was found that the 1 GΩ resistances determined by the two bridges agreed within 2.4 × 10 −6 Ω/Ω. We expect that the presented method can also be used to calibrate arbitrary resistance ratios

  8. Second Sound Measurement using SMD resistors to simulate Quench locations on the 704 MHZ Single-Cell Cavity at CERN

    CERN Document Server

    Liao, K; Ciapala, E; Junginger, T; Weingarten, W

    2012-01-01

    Oscillating Superleak Transducers (OSTs) containing flexible porous membranes are widely used to detect the so-called second sound temperature wave when a quench event occurs in a superconducting RF cavity. In principle, from the measured speed of this wave and the travel time between the quench event and several OSTs, the location of the quench sites can be derived by triangulation. Second sound behaviour has been simulated through different surface mount (SMD) resistors setups on a Superconducting Proton Linac (SPL) test cavity, to help understanding the underlying physics and improve quench localisation. Experiments are described that have been conducted to search for explanation of heat transfer during cavity quench that causes contradictory triangulation results.

  9. Resistor mesh model of a spherical head: part 2: a review of applications to cortical mapping.

    Science.gov (United States)

    Chauveau, N; Morucci, J P; Franceries, X; Celsis, P; Rigaud, B

    2005-11-01

    A resistor mesh model (RMM) has been validated with reference to the analytical model by consideration of a set of four dipoles close to the cortex. The application of the RMM to scalp potential interpolation was detailed in Part 1. Using the RMM and the same four dipoles, the different methods of cortical mapping were compared and have shown the potentiality of this RMM for obtaining current and potential cortical distributions. The lead-field matrices are well-adapted tools, but the use of a square matrix of high dimension does not permit the inverse solution to be improved in the presence of noise, as a regularisation technique is necessary with noisy data. With the RMM, the transfer matrix and the cortical imaging technique proved to be easy to implement. Further development of the RMM will include application to more realistic head models with more accurate conductivities.

  10. Circular resistor networks for electrical impedance tomography with partial boundary measurements

    International Nuclear Information System (INIS)

    Borcea, L; Mamonov, A V; Druskin, V

    2010-01-01

    We introduce an algorithm for the numerical solution of electrical impedance tomography (EIT) in two dimensions, with partial boundary measurements. The algorithm is an extension of the one in Borcea et al (2008 Inverse Problems 24 035013 (31pp)) and Vasquez (2006 PhD Thesis Rice University, Houston, TX, USA) for EIT with full boundary measurements. It is based on resistor networks that arise in finite volume discretizations of the elliptic partial differential equation for the potential on so-called optimal grids that are computed as part of the problem. The grids are adaptively refined near the boundary, where we measure and expect better resolution of the images. They can be used very efficiently in inversion, by defining a reconstruction mapping that is an approximate inverse of the forward map, and acts therefore as a preconditioner in any iterative scheme that solves the inverse problem via optimization. The main result in this paper is the construction of optimal grids for EIT with partial measurements by extremal quasiconformal (Teichmüller) transformations of the optimal grids for EIT with full boundary measurements. We present the algorithm for computing the reconstruction mapping on such grids, and we illustrate its performance with numerical simulations. The results show an interesting trade-off between the resolution of the reconstruction in the domain of the solution and distortions due to artificial anisotropy induced by the distribution of the measurement points on the accessible boundary

  11. RANCANGAN RANGKAIAN SIMULASI LUXMETER DENGAN MENGGUNAKAN SENSOR LIGHT DEPENDENT RESISTOR (LDR BERBASIS MIKROKONTROLER AT89S52 DENGAN PROGRAM PROTEUS 7.0

    Directory of Open Access Journals (Sweden)

    I Kadek Widiantara

    2016-08-01

    Full Text Available It has been designed a series of simulations using sensors Luxmeter Light Dependent Resistor (LDR based Microcontroller AT89S52 with proteus 7.0 program that has a variety of functions and can be used to assist the people work. One of its functions can be applied as a measure of light intensity. Program into the controller of the system Lux Meter work and most of the performance is determined by a given program. Speed performance of a device based mikrokontroler also very dependent on the value of the frequency of the crystal oscillator is used.

  12. Label-free electrical determination of trypsin activity by a silicon-on-insulator based thin film resistor.

    Science.gov (United States)

    Neff, Petra A; Serr, Andreas; Wunderlich, Bernhard K; Bausch, Andreas R

    2007-10-08

    A silicon-on-insulator (SOI) based thin film resistor is employed for the label-free determination of enzymatic activity. We demonstrate that enzymes, which cleave biological polyelectrolyte substrates, can be detected by the sensor. As an application, we consider the serine endopeptidase trypsin, which cleaves poly-L-lysine (PLL). We show that PLL adsorbs quasi-irreversibly to the sensor and is digested by trypsin directly at the sensor surface. The created PLL fragments are released into the bulk solution due to kinetic reasons. This results in a measurable change of the surface potential allowing for the determination of trypsin concentrations down to 50 ng mL(-1). Chymotrypsin is a similar endopeptidase with a different specificity, which cleaves PLL with a lower efficiency as compared to trypsin. The activity of trypsin is analyzed quantitatively employing a kinetic model for enzyme-catalyzed surface reactions. Moreover, we have demonstrated the specific inactivation of trypsin by a serine protease inhibitor, which covalently binds to the active site of the enzyme.

  13. Field effect of screened charges: electrical detection of peptides and proteins by a thin-film resistor.

    Science.gov (United States)

    Lud, Simon Q; Nikolaides, Michael G; Haase, Ilka; Fischer, Markus; Bausch, Andreas R

    2006-02-13

    For many biotechnological applications the label-free detection of biomolecular interactions is becoming of outstanding importance. In this Article we report the direct electrical detection of small peptides and proteins by their intrinsic charges using a biofunctionalized thin-film resistor. The label-free selective and quantitative detection of small peptides and proteins is achieved using hydrophobized silicon-on-insulator (SOI) substrates functionalized with lipid membranes that incorporate metal-chelating lipids. The response of the nanometer-thin conducting silicon film to electrolyte screening effects is taken into account to determine quantitatively the charges of peptides. It is even possible to detect peptides with a single charge and to distinguish single charge variations of the analytes even in physiological electrolyte solutions. As the device is based on standard semiconductor technologies, parallelization and miniaturization of the SOI-based biosensor is achievable by standard CMOS technologies and thus a promising basis for high-throughput screening or biotechnological applications.

  14. Functional characteristics of a new electrolarynx "Evada" having a force sensing resistor sensor.

    Science.gov (United States)

    Choi, H S; Park, Y J; Lee, S M; Kim, K M

    2001-12-01

    Electrolarynxes have been used as one of the rehabilitation methods for laryngectomees. Earlier electrolarynxes could not alter frequency and intensity simultaneously during conversation. Recently, we developed an electrolarynx named "Evada" (prototype so far) using a force sensing resistor (FSR) sensor that can control both frequency and intensity simultaneously during conversation. Employing three types of electrolarynxes (Evada, Servox-inton, Nu-vois), this study was undertaken to examine the functional characteristics of Evada for the normal control group and for laryngectomess. Five laryngectomees and five normal adults were asked to express three sentences (declarative sentence, "You stay here.", interrogative sentence, "You stay here?", and imperative sentence, "You! Stay here.") using three types of electrolarynxes. Frequency and intensity changes between the first and last vowels in the three sentences were calculated and analyzed statistically by paired t test. The frequency changes in the interrogative and imperative sentences were more prominent in Evada than in Servox-inton and Nu-vois. The intensity changes in the interrogative and imperative sentences were also more prominent in Evada than in Servox-inton and Nu-vois. Evada controls frequency and/or intensity by having the subject press the control button(s). Therefore, Evada appears to be better at producing intonation and contrastive stress than Nu-vois and Servox-inton.

  15. Mechanisms of Low-Temperature Nitridation Technology on a TaN Thin Film Resistor for Temperature Sensor Applications.

    Science.gov (United States)

    Chen, Huey-Ru; Chen, Ying-Chung; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Chu, Tian-Jian; Shih, Chih-Cheng; Chuang, Nai-Chuan; Wang, Kao-Yuan

    2016-12-01

    In this letter, we propose a novel low-temperature nitridation technology on a tantalum nitride (TaN) thin film resistor (TFR) through supercritical carbon dioxide (SCCO2) treatment for temperature sensor applications. We also found that the sensitivity of temperature of the TaN TFR was improved about 10.2 %, which can be demonstrated from measurement of temperature coefficient of resistance (TCR). In order to understand the mechanism of SCCO2 nitridation on the TaN TFR, the carrier conduction mechanism of the device was analyzed through current fitting. The current conduction mechanism of the TaN TFR changes from hopping to a Schottky emission after the low-temperature SCCO2 nitridation treatment. A model of vacancy passivation in TaN grains with nitrogen and by SCCO2 nitridation treatment is eventually proposed to increase the isolation ability in TaN TFR, which causes the transfer of current conduction mechanisms.

  16. Prediction of multiple resonance characteristics by an extended resistor-inductor-capacitor circuit model for plasmonic metamaterials absorbers in infrared.

    Science.gov (United States)

    Xu, Xiaolun; Li, Yongqian; Wang, Binbin; Zhou, Zili

    2015-10-01

    The resonance characteristics of plasmonic metamaterials absorbers (PMAs) are strongly dependent on geometric parameters. A resistor-inductor-capacitor (RLC) circuit model has been extended to predict the resonance wavelengths and the bandwidths of multiple magnetic polaritons modes in PMAs. For a typical metallic-dielectric-metallic structure absorber working in the infrared region, the developed model describes the correlation between the resonance characteristics and the dimensional sizes. In particular, the RLC model is suitable for not only the fundamental resonance mode, but also for the second- and third-order resonance modes. The prediction of the resonance characteristics agrees fairly well with those calculated by the finite-difference time-domain simulation and the experimental results. The developed RLC model enables the facilitation of designing multi-band PMAs for infrared radiation detectors and thermal emitters.

  17. Resistor mesh model of a spherical head: part 1: applications to scalp potential interpolation.

    Science.gov (United States)

    Chauveau, N; Morucci, J P; Franceries, X; Celsis, P; Rigaud, B

    2005-11-01

    A resistor mesh model (RMM) has been implemented to describe the electrical properties of the head and the configuration of the intracerebral current sources by simulation of forward and inverse problems in electroencephalogram/event related potential (EEG/ERP) studies. For this study, the RMM representing the three basic tissues of the human head (brain, skull and scalp) was superimposed on a spherical volume mimicking the head volume: it included 43 102 resistances and 14 123 nodes. The validation was performed with reference to the analytical model by consideration of a set of four dipoles close to the cortex. Using the RMM and the chosen dipoles, four distinct families of interpolation technique (nearest neighbour, polynomial, splines and lead fields) were tested and compared so that the scalp potentials could be recovered from the electrode potentials. The 3D spline interpolation and the inverse forward technique (IFT) gave the best results. The IFT is very easy to use when the lead-field matrix between scalp electrodes and cortex nodes has been calculated. By simple application of the Moore-Penrose pseudo inverse matrix to the electrode cap potentials, a set of current sources on the cortex is obtained. Then, the forward problem using these cortex sources renders all the scalp potentials.

  18. Microstructure and temperature coefficient of resistance of thin cermet resistor films deposited from CrSi2-Cr-SiC targets by S-gun magnetron

    International Nuclear Information System (INIS)

    Felmetsger, Valery V.

    2010-01-01

    Technological solutions for producing nanoscale cermet resistor films with sheet resistances above 1000 Ω/□ and low temperature coefficients of resistance (TCR) have been investigated. 2-40 nm thick cermet films were sputter deposited from CrSi 2 -Cr-SiC targets by a dual cathode dc S-gun magnetron. In addition to studying film resistance versus temperature, the nanofilm structural features and composition were analyzed using scanning electron microscopy, atomic force microscopy, high-resolution transmission electron microscopy, energy-dispersive x-ray spectroscopy, and electron energy loss spectroscopy. This study has revealed that all cermet resistor films deposited at ambient and elevated temperatures were amorphous. The atomic ratio of Si to Cr in these films was about 2 to 1. The film TCR displayed a significant increase when the deposited film thickness was reduced below 2.5 nm. An optimized sputter process consisting of wafer degassing, cermet film deposition at elevated temperature with rf substrate bias, and a double annealing in vacuum, consisting of in situ annealing following the film sputtering and an additional annealing following the exposure of the wafers to air, has been found to be very effective for the film thermal stabilization and for fine tuning the film TCR. Cermet films with thicknesses in the range of 2.5-4 nm deposited using this technique had sheet resistances ranging from 1800 to 1200 Ω/□ and TCR values from -50 ppm/ deg. C to near zero, respectively. A possible mechanism responsible for the high efficiency of annealing the cermet films in vacuum (after preliminary exposure to air), resulting in resistance stabilization and TCR reduction, is also discussed.

  19. Detection and quantification through a lipid membrane using the molecularly controlled semiconductor resistor.

    Science.gov (United States)

    Bavli, Danny; Tkachev, Maria; Piwonski, Hubert; Capua, Eyal; de Albuquerque, Ian; Bensimon, David; Haran, Gilad; Naaman, Ron

    2012-01-10

    The detection of covalent and noncovalent binding events between molecules and biomembranes is a fundamental goal of contemporary biochemistry and analytical chemistry. Currently, such studies are performed routinely using fluorescence methods, surface-plasmon resonance spectroscopy, and electrochemical methods. However, there is still a need for novel sensitive miniaturizable detection methods where the sample does not have to be transferred to the sensor, but the sensor can be brought into contact with the sample studied. We present a novel approach for detection and quantification of processes occurring on the surface of a lipid bilayer membrane, by monitoring the current change through the n-type GaAs-based molecularly controlled semiconductor resistor (MOCSER), on which the membrane is adsorbed. Since GaAs is susceptible to etching in an aqueous environment, a protective thin film of methoxysilane was deposited on the device. The system was found to be sensitive enough to allow monitoring changes in pH and in the concentration of amino acids in aqueous solution on top of the membrane. When biotinylated lipids were incorporated into the membrane, it was possible to monitor the binding of streptavidin or avidin. The device modified with biotin-streptavidin complex was capable of detecting the binding of streptavidin antibodies to immobilized streptavidin with high sensitivity and selectivity. The response depends on the charge on the analyte. These results open the way to facile electrical detection of protein-membrane interactions.

  20. Electrical and Gas Sensing Properties of SnO2 Thick Film Resistors Prepared by Screen-printing Method

    Directory of Open Access Journals (Sweden)

    R. Y. BORSE

    2008-10-01

    Full Text Available Thick films of tin-oxide (SnO2 were deposited on alumina substrates employing screen-printing technique. The films were dried and fired at 680 0C for 30 minutes. The variation of D.C. resistance of thick films was measured in air as well as in H2S gas atmosphere as a function of temperature. The SnO2 films exhibit semiconducting behaviour. The SnO2 thick films studied were also showing decrease in resistance with increase of concentration of H2S gas. The film resistors showed the highest sensitivity to H2S gas at 350 0C. The XRD studies of the thick film indicate the presence of different phases of SnO2. The elemental analysis was confirmed by EDX spectra. The surface morphological study of the films was analyzed by SEM. The microstructure of the films was porous resulting from loosely interconnected small crystallites. The parameters such as grain size, activation energy, sensitivity and response time were described.

  1. A non-destructive crossbar architecture of multi-level memory-based resistor

    Science.gov (United States)

    Sahebkarkhorasani, Seyedmorteza

    Nowadays, researchers are trying to shrink the memory cell in order to increase the capacity of the memory system and reduce the hardware costs. In recent years, there has been a revolution in electronics by using fundamentals of physics to build a new memory for computer application in order to increase the capacity and decrease the power consumption. Increasing the capacity of the memory causes a growth in the chip area. From 1971 to 2012 semiconductor manufacturing process improved from 6mum to 22 mum. In May 2008, S.Williams stated that "it is time to stop shrinking". In his paper, he declared that the process of shrinking memory element has recently become very slow and it is time to use another alternative in order to create memory elements [9]. In this project, we present a new design of a memory array using the new element named Memristor [3]. Memristor is a two-terminal passive electrical element that relates the charge and magnetic flux to each other. The device remained unknown since 1971 when it was discovered by Chua and introduced as the fourth fundamental passive element like capacitor, inductor and resistor [3]. Memristor has a dynamic resistance and it can retain its previous value even after disconnecting the power supply. Due to this interesting behavior of the Memristor, it can be a good replacement for all of the Non-Volatile Memories (NVMs) in the near future. Combination of this newly introduced element with the nanowire crossbar architecture would be a great structure which is called Crossbar Memristor. Some frameworks have recently been introduced in literature that utilized Memristor crossbar array, but there are many challenges to implement the Memristor crossbar array due to fabrication and device limitations. In this work, we proposed a simple design of Memristor crossbar array architecture which uses input feedback in order to preserve its data after each read operation.

  2. Antares prototype 300-kJ, 250-kA Marx generator. Final report

    International Nuclear Information System (INIS)

    Riepe, K.B.; Barrone, L.L.; Bickford, K.J.; Livermore, G.H.

    1981-01-01

    A high-energy, low-inductance, low prefire rate, low trigger jitter, high-voltage, pulsed-power supply was needed to drive the gas discharge in the Antares laser power amplifier. This report describes the design and testing of a Marx generator that meets these requirements, the development and testing of a high-capacity spark gap, and the selection of suitable capacitors and resistors

  3. An anthropomorphic transhumeral prosthesis socket developed based on an oscillometric pump and controlled by force-sensitive resistor pressure signals.

    Science.gov (United States)

    Razak, N A Abd; Gholizadeh, H; Hasnan, N; Osman, N A Abu; Fadzil, S S Mohd; Hashim, N A

    2017-02-01

    While considering the importance of the interface between amputees and prosthesis sockets, we study an anthropomorphic prosthesis socket whose size can be dynamically changed according to the requirements of the residual limb. First, we introduce the structure and function of the anthropomorphic prosthesis socket. Second, we study the dynamic model of the prosthesis system and analyze the dynamic characteristics of the prosthesis socket system, the inputs of an oscillometric pump, and the control mechanism of force-sensitive resistor (FSR) pressure signals. Experiments on 10 healthy subjects using the designed system yield an average detection result between 102 and 112 kPa for the FSR pressure sensor and 39 and 41 kPa for the oscillometric pump. Results show the function of the FSR pressure signal in maintaining the contact pressure between the sockets and the residual limb. The potential development of an auto-adjusted socket that uses an oscillometric pump system will provide prosthetic sockets with controllable contact pressure at the residual limb. Moreover, this development is an attractive research area for researchers involved in rehabilitation engineering, prosthetics, and orthotics.

  4. Formation and dielectric properties of polyelectrolyte multilayers studied by a silicon-on-insulator based thin film resistor.

    Science.gov (United States)

    Neff, Petra A; Wunderlich, Bernhard K; Klitzing, Regine V; Bausch, Andreas R

    2007-03-27

    The formation of polyelectrolyte multilayers (PEMs) is investigated using a silicon-on-insulator based thin film resistor which is sensitive to variations of the surface potential. The buildup of the PEMs at the silicon oxide surface of the device can be observed in real time as defined potential shifts. The influence of polymer charge density is studied using the strong polyanion poly(styrene sulfonate), PSS, combined with the statistical copolymer poly(diallyl-dimethyl-ammoniumchloride-stat-N-methyl-N-vinylacetamide), P(DADMAC-stat-NMVA), at various degrees of charge (DC). The multilayer formation stops after a few deposition steps for a DC below 75%. We show that the threshold of surface charge compensation corresponds to the threshold of multilayer formation. However, no reversion of the preceding surface charge was observed. Screening of polyelectrolyte charges by mobile ions within the polymer film leads to a decrease of the potential shifts with the number of layers deposited. This decrease is much slower for PEMs consisting of P(DADMAC-stat-NMVA) and PSS as compared to PEMs consisting of poly(allylamine-hydrochloride), PAH, and PSS. From this, significant differences in the dielectric constants of the polyelectrolyte films and in the concentration of mobile ions within the films can be derived.

  5. The effect of biomechanical variables on force sensitive resistor error: Implications for calibration and improved accuracy.

    Science.gov (United States)

    Schofield, Jonathon S; Evans, Katherine R; Hebert, Jacqueline S; Marasco, Paul D; Carey, Jason P

    2016-03-21

    Force Sensitive Resistors (FSRs) are commercially available thin film polymer sensors commonly employed in a multitude of biomechanical measurement environments. Reasons for such wide spread usage lie in the versatility, small profile, and low cost of these sensors. Yet FSRs have limitations. It is commonly accepted that temperature, curvature and biological tissue compliance may impact sensor conductance and resulting force readings. The effect of these variables and degree to which they interact has yet to be comprehensively investigated and quantified. This work systematically assesses varying levels of temperature, sensor curvature and surface compliance using a full factorial design-of-experiments approach. Three models of Interlink FSRs were evaluated. Calibration equations under 12 unique combinations of temperature, curvature and compliance were determined for each sensor. Root mean squared error, mean absolute error, and maximum error were quantified as measures of the impact these thermo/mechanical factors have on sensor performance. It was found that all three variables have the potential to affect FSR calibration curves. The FSR model and corresponding sensor geometry are sensitive to these three mechanical factors at varying levels. Experimental results suggest that reducing sensor error requires calibration of each sensor in an environment as close to its intended use as possible and if multiple FSRs are used in a system, they must be calibrated independently. Copyright © 2016 Elsevier Ltd. All rights reserved.

  6. Development of high temperature strain gage, (5)

    International Nuclear Information System (INIS)

    Yuuki, Hiroshi; Kobayashi, Yukio; Kanai, Kenji; Yamaura, Yoshio

    1976-01-01

    Development and improvement of resistance wire type strain gages usable for experimental measurement of thermal strains generated at high temperature in various structures and equipments that consist of a Fast Breeder Reactor have been carried out, and various characteristics of the strain gages have been investigated. Based on the results obtained up to now, development and research of this time mainly aim to improve strain and fatigue characteristics. As the results, characteristics of strain gages with sensing elements of nichrome V are improved, specifically mechanical hysteresis is decreased, strain limit is increased, etc. Also, improvement is recognized in thermal output, and it becomes clear that dummy gages work effectively. However, a filling method of MgO and an inserting method of active-dummy elements are selected as primary objects to improve strain characteristics, and many hours are taken for these objects, so confirmations of characteristics of platinum-tungsten strain gages, strain sensing elements of which are troublesome to produce, have not been completely done, though the performance of the gages has been improved in several points. As to nichrome V strain gages, there is a fair prospect of obtaining ones, specifications of which are quite close to the goal, though problems in manufacturing technics remain for future. As to platinum-tungsten strain gages, it is expected that similar strain gages to nichrome V are obtainable by improvement in manufacturing of sensing elements. (auth.)

  7. Final Assembly, Testing and Processing of the Rigidizable Inflatable Get-Away-Special Experiment (RIGEX) for Spaceflight Qualification

    Science.gov (United States)

    2007-09-01

    Determined heating profile of tubes, Verified Piezo patch funtionability after heating, Full Scale Deployment Test, Pressure System Test, SERB - Moody...Ohm Resistor (Vishay Dale) 1 704.910.3 EAO Impulse Switch 1 H335111200 Current Display (Simpson) 1 MB 2061SS1W01- CA Bushing Mount Miniature

  8. Underlying Physics of Conductive Polymer Composites and Force Sensing Resistors (FSRs). A Study on Creep Response and Dynamic Loading.

    Science.gov (United States)

    Paredes-Madrid, Leonel; Matute, Arnaldo; Bareño, Jorge O; Parra Vargas, Carlos A; Gutierrez Velásquez, Elkin I

    2017-11-21

    Force Sensing Resistors (FSRs) are manufactured by sandwiching a Conductive Polymer Composite (CPC) between metal electrodes. The piezoresistive property of FSRs has been exploited to perform stress and strain measurements, but the rheological property of polymers has undermined the repeatability of measurements causing creep in the electrical resistance of FSRs. With the aim of understanding the creep phenomenon, the drift response of thirty two specimens of FSRs was studied using a statistical approach. Similarly, a theoretical model for the creep response was developed by combining the Burger's rheological model with the equations for the quantum tunneling conduction through thin insulating films. The proposed model and the experimental observations showed that the sourcing voltage has a strong influence on the creep response; this observation-and the corresponding model-is an important contribution that has not been previously accounted. The phenomenon of sensitivity degradation was also studied. It was found that sensitivity degradation is a voltage-related phenomenon that can be avoided by choosing an appropriate sourcing voltage in the driving circuit. The models and experimental observations from this study are key aspects to enhance the repeatability of measurements and the accuracy of FSRs.

  9. Limiting oxygen concentration for extinction of upward spreading flames over inclined thin polyethylene-insulated NiCr electrical wires with opposed-flow under normal- and micro-gravity

    KAUST Repository

    Hu, Longhua; Lu, Yong; Yoshioka, Kosuke; Zhang, Yangshu; Fernandez-Pello, Carlos; Chung, Suk-Ho; Fujita, Osamu

    2016-01-01

    . The experiments reported here used polyethylene (PE)-insulated (thickness of 0.15 mm) Nichrome (NiCr)-core (diameter of 0.5 mm) electrical wires. Limiting oxygen concentrations (LOC) at extinction were measured for upward spreading flame at various forced opposed-flow

  10. LPG and NH3 Sensing Properties of SnO2 Thick Film Resistors Prepared by Screen Printing Technique

    Directory of Open Access Journals (Sweden)

    A. S. GARDE

    2010-11-01

    Full Text Available The gas sensing behavior of SnO2 thick film resistors deposited on alumina substrates has been investigated for LPG and NH3 gas. The standard screen printing technology was used to prepare the thick films. The films were fired at optimized temperature of 780 0C for 30 minutes. The material characterization was performed by XRD, SEM, FTIR, UV and EDAX for elemental analysis. IR spectroscopy analysis at 2949.26 cm-1 showed the peak assigned to the –Sn-H vibration due to the effect of hybridization i.e. sp3 and the sharp peak at 3734.31 cm-1 assigned to –Sn-OH stretching vibration due to hydrogen bonding. The variation of D.C electrical resistance of SnO2 film samples was measured in air as well as in LPG and NH3 gas atmosphere as a function of temperature. The SnO2 film samples show negative temperature coefficient of résistance. The SnO2 film samples showed the highest sensitivity to 600 ppm of LPG at 230 0C and NH3 at 370 0C. The effect of microstructure on sensitivity, response time and recovery time of the sensor in the presence of LPG and NH3 gases were studied and discussed.

  11. A noble technique a using force-sensing resistor for immobilization-device quality assurance: A feasibility study

    Science.gov (United States)

    Cho, Min-Seok; Kim, Tae-Ho; Kang, Seong-Hee; Kim, Dong-Su; Kim, Kyeong-Hyeon; Shin, Dong-Seok; Noh, Yu-Yun; Koo, Hyun-Jae; Cheon, Geum Seong; Suh, Tae Suk; Kim, Siyong

    2016-03-01

    Many studies have reported that a patient can move even when an immobilization device is used. Researchers have developed an immobilization-device quality-assurance (QA) system that evaluates the validity of immobilization devices. The QA system consists of force-sensing-resistor (FSR) sensor units, an electric circuit, a signal conditioning device, and a control personal computer (PC) with in-house software. The QA system is designed to measure the force between an immobilization device and a patient's skin by using the FSR sensor unit. This preliminary study aimed to evaluate the feasibility of using the QA system in radiation-exposure situations. When the FSR sensor unit was irradiated with a computed tomography (CT) beam and a treatment beam from a linear accelerator (LINAC), the stability of the output signal, the image artifact on the CT image, and changing the variation on the patient's dose were tested. The results of this study demonstrate that this system is promising in that it performed within the error range (signal variation on CT beam < 0.30 kPa, root-mean-square error (RMSE) of the two CT images according to presence or absence of the FSR sensor unit < 15 HU, signal variation on the treatment beam < 0.15 kPa, and dose difference between the presence and the absence of the FSR sensor unit < 0.02%). Based on the obtained results, we will volunteer tests to investigate the clinical feasibility of the QA system.

  12. Degradation of GaAs/AlGaAs Quantized Hall Resistors With Alloyed AuGe/Ni Contacts.

    Science.gov (United States)

    Lee, Kevin C

    1998-01-01

    Careful testing over a period of 6 years of a number of GaAs/AlGaAs quantized Hall resistors (QHR) made with alloyed AuGe/Ni contacts, both with and without passivating silicon nitride coatings, has resulted in the identification of important mechanisms responsible for degradation in the performance of the devices as resistance standards. Covering the contacts with a film, such as a low-temperature silicon nitride, that is impervious to humidity and other contaminants in the atmosphere prevents the contacts from degrading. The devices coated with silicon nitride used in this study, however, showed the effects of a conducting path in parallel with the 2-dimensional electron gas (2-DEG) at temperatures above 1.1 K which interferes with their use as resistance standards. Several possible causes of this parallel conduction are evaluated. On the basis of this work, two methods are proposed for protecting QHR devices with alloyed AuGe/Ni contacts from degradation: the heterostructure can be left unpassivated, but the alloyed contacts can be completely covered with a very thick (> 3 μm) coating of gold; or the GaAs cap layer can be carefully etched away after alloying the contacts and prior to depositing a passivating silicon nitride coating over the entire sample. Of the two, the latter is more challenging to effect, but preferable because both the contacts and the heterostructure are protected from corrosion and oxidation.

  13. Self-folding miniature elastic electric devices

    International Nuclear Information System (INIS)

    Miyashita, Shuhei; Meeker, Laura; Rus, Daniela; Tolley, Michael T; Wood, Robert J

    2014-01-01

    Printing functional materials represents a considerable impact on the access to manufacturing technology. In this paper we present a methodology and validation of print-and-self-fold miniature electric devices. Polyvinyl chloride laminated sheets based on metalized polyester film show reliable self-folding processes under a heat application, and it configures 3D electric devices. We exemplify this technique by fabricating fundamental electric devices, namely a resistor, capacitor, and inductor. Namely, we show the development of a self-folded stretchable resistor, variable resistor, capacitive strain sensor, and an actuation mechanism consisting of a folded contractible solenoid coil. Because of their pre-defined kinematic design, these devices feature elasticity, making them suitable as sensors and actuators in flexible circuits. Finally, an RLC circuit obtained from the integration of developed devices is demonstrated, in which the coil based actuator is controlled by reading a capacitive strain sensor. (paper)

  14. INCREASED RELIABILITY OF ELECTRIC BLASTING

    OpenAIRE

    Kashuba, Oleh Ivanovych; Skliarov, L I; Skliarov, A L

    2017-01-01

    The problems of improving reliability of an electric blasting method using electric detonators with nichrome filament bridges. It was revealed that in the calculation of the total resistance of the explosive network it is necessary to increase to 24% of the nominal value

  15. Resistive switching mechanism in the one diode-one resistor memory based on p+-Si/n-ZnO heterostructure revealed by in-situ TEM

    Science.gov (United States)

    Zhang, Lei; Zhu, Liang; Li, Xiaomei; Xu, Zhi; Wang, Wenlong; Bai, Xuedong

    2017-03-01

    One diode-one resistor (1D1R) memory is an effective architecture to suppress the crosstalk interference, realizing the crossbar network integration of resistive random access memory (RRAM). Herein, we designed a p+-Si/n-ZnO heterostructure with 1D1R function. Compared with the conventional multilayer 1D1R devices, the structure and fabrication technique can be largely simplified. The real-time imaging of formation/rupture process of conductive filament (CF) process demonstrated the RS mechanism by in-situ transmission electron microscopy (TEM). Meanwhile, we observed that the formed CF is only confined to the outside of depletion region of Si/ZnO pn junction, and the formation of CF does not degrade the diode performance, which allows the coexistence of RS and rectifying behaviors, revealing the 1D1R switching model. Furthermore, it has been confirmed that the CF is consisting of the oxygen vacancy by in-situ TEM characterization.

  16. Resistive switching mechanism in the one diode-one resistor memory based on p+-Si/n-ZnO heterostructure revealed by in-situ TEM.

    Science.gov (United States)

    Zhang, Lei; Zhu, Liang; Li, Xiaomei; Xu, Zhi; Wang, Wenlong; Bai, Xuedong

    2017-03-21

    One diode-one resistor (1D1R) memory is an effective architecture to suppress the crosstalk interference, realizing the crossbar network integration of resistive random access memory (RRAM). Herein, we designed a p + -Si/n-ZnO heterostructure with 1D1R function. Compared with the conventional multilayer 1D1R devices, the structure and fabrication technique can be largely simplified. The real-time imaging of formation/rupture process of conductive filament (CF) process demonstrated the RS mechanism by in-situ transmission electron microscopy (TEM). Meanwhile, we observed that the formed CF is only confined to the outside of depletion region of Si/ZnO pn junction, and the formation of CF does not degrade the diode performance, which allows the coexistence of RS and rectifying behaviors, revealing the 1D1R switching model. Furthermore, it has been confirmed that the CF is consisting of the oxygen vacancy by in-situ TEM characterization.

  17. Cortical imaging on a head template: a simulation study using a resistor mesh model (RMM).

    Science.gov (United States)

    Chauveau, Nicolas; Franceries, Xavier; Aubry, Florent; Celsis, Pierre; Rigaud, Bernard

    2008-09-01

    The T1 head template model used in Statistical Parametric Mapping Version 2000 (SPM2), was segmented into five layers (scalp, skull, CSF, grey and white matter) and implemented in 2 mm voxels. We designed a resistor mesh model (RMM), based on the finite volume method (FVM) to simulate the electrical properties of this head model along the three axes for each voxel. Then, we introduced four dipoles of high eccentricity (about 0.8) in this RMM, separately and simultaneously, to compute the potentials for two sets of conductivities. We used the direct cortical imaging technique (CIT) to recover the simulated dipoles, using 60 or 107 electrodes and with or without addition of Gaussian white noise (GWN). The use of realistic conductivities gave better CIT results than standard conductivities, lowering the blurring effect on scalp potentials and displaying more accurate position areas when CIT was applied to single dipoles. Simultaneous dipoles were less accurately localized, but good qualitative and stable quantitative results were obtained up to 5% noise level for 107 electrodes and up to 10% noise level for 60 electrodes, showing that a compromise must be found to optimize both the number of electrodes and the noise level. With the RMM defined in 2 mm voxels, the standard 128-electrode cap and 5% noise appears to be the upper limit providing reliable source positions when direct CIT is used. The admittance matrix defining the RMM is easy to modify so as to adapt to different conductivities. The next step will be the adaptation of individual real head T2 images to the RMM template and the introduction of anisotropy using diffusion imaging (DI).

  18. High current density and nonlinearity combination of selection device based on TaO(x)/TiO2/TaO(x) structure for one selector-one resistor arrays.

    Science.gov (United States)

    Lee, Wootae; Park, Jubong; Kim, Seonghyun; Woo, Jiyong; Shin, Jungho; Choi, Godeuni; Park, Sangsu; Lee, Daeseok; Cha, Euijun; Lee, Byoung Hun; Hwang, Hyunsang

    2012-09-25

    We demonstrate a high-performance selection device by utilizing the concept of crested oxide barrier to suppress the sneak current in bipolar resistive memory arrays. Using a TaO(x)/TiO(2)/TaO(x) structure, high current density over 10(7) A cm(-2) and excellent nonlinear characteristics up to 10(4) were successfully demonstrated. On the basis of the defect chemistry and SIMS depth profile result, we found that some Ta atoms gradually diffused into TiO(2) film, and consequently, the energy band of the TiO(2) film was symmetrically bent at the top and bottom TaO(x)/TiO(2) interfaces and modified as a crested oxide barrier. Furthermore, the one selector-one resistor device exhibited significant suppression of the leakage current, indicating excellent selector characteristics.

  19. Plasma metallization of aluminium oxide powder

    International Nuclear Information System (INIS)

    Smirnov, A.I.; Petrunichev, V.A.

    1981-01-01

    The sintering ability of cermets of metallized granulas of aluminium and matrix materials, such as chromium, nickel and nichrome is studied. Deformation tests of samples of cermets with molybdenum coated granules show satisfactory results at normal and high temperatures without fracture of metall-oxide interfaces [ru

  20. Microscopic analysis of nanostructured plasma coatings

    Science.gov (United States)

    Ageev, E. V.; Altukhov, A. Yu; Ageeva, E. V.; Khardikov, S. V.

    2018-03-01

    In the course of the study, it was found that plasma nanocomposite coating obtained from a mixture of powders of BRS, VK8 and nichrome with a portable plasma device “ALPES-02M” has high performance properties, which significantly expands the scope of its application.

  1. General Voltage Feedback Circuit Model in the Two-Dimensional Networked Resistive Sensor Array

    Directory of Open Access Journals (Sweden)

    JianFeng Wu

    2015-01-01

    Full Text Available To analyze the feature of the two-dimensional networked resistive sensor array, we firstly proposed a general model of voltage feedback circuits (VFCs such as the voltage feedback non-scanned-electrode circuit, the voltage feedback non-scanned-sampling-electrode circuit, and the voltage feedback non-scanned-sampling-electrode circuit. By analyzing the general model, we then gave a general mathematical expression of the effective equivalent resistor of the element being tested in VFCs. Finally, we evaluated the features of VFCs with simulation and test experiment. The results show that the expression is applicable to analyze the VFCs’ performance of parameters such as the multiplexers’ switch resistors, the nonscanned elements, and array size.

  2. Radiation detector arrangements and methods

    International Nuclear Information System (INIS)

    Jackson, J.

    1989-01-01

    The patent describes a radiation detector arrangement. It comprises at least one detector element in the form of a temperature-sensitive resistor whose electrical resistance changes in response to radiation incident on the detector element, the resistor having a high positive temperature coefficient of electrical resistance at a transition in its electrical conductance, circuit means for applying a voltage across the resistor during operation of the detector arrangement, and temperature-regulation means for regulating the temperature of the resistor so as to operate the resistor in the transition, characterised in that the temperature-regulation means comprises the resistor and the circuit means which passes sufficient current through the resistor by resistance heating to a position in the transition at which a further increase in its temperature in response to incident radiation reduces the resistance heating by reducing the current, thereby stabilizing the temperature of the resistor at the position. The positive temperature coefficient at the position being sufficiently high that the change in the resistance heating produced by a change in the temperature of the resistor at the position is larger than a change in power of the incident radiation required to produce that same change in temperature of the resistor in the absence of any change in resistance heating

  3. Research in radiation monitoring survey instrumentation. Final report

    International Nuclear Information System (INIS)

    Blalock, T.V.; Kennedy, E.J.; Phillips, R.G.; Walker, E.W. Jr.

    1978-01-01

    Two low-power solid-state prototype readout units were developed, an LED display and a LCD display. This display output was in a bar-graph format, covering four-decades of information, with 10-segments per decade. The displays accept a frequency input, which is standardly available from several portable radiation-survey instruments. Both readout units will operate on two D-cell batteries (3.0 Volt), with a typical current drain requirement of 0.3 MA for the LED display and 30μA for the LCD display. A wide-range electrometer circuit was also developed. The circuit covers an input current range from 10 -13 A to 10 -8 A. The output signal is a pulse whose frequency is directly proportional to input current. The circuit requires no high-megohm resistors, and is autoranging. Several candidate input amplifiers were analyzed and evaluated for use with the electrometer circuit

  4. Thermosetting polyimide resin matrix composites with interpenetrating polymer networks for precision foil resistor chips based on special mechanical performance requirements

    Energy Technology Data Exchange (ETDEWEB)

    Wang, X.Y., E-mail: wxy@tju.edu.cn [School of Electronic Information Engineering, Tianjin University, Tianjin 300072 (China); Ma, J.X.; Li, C.G. [School of Electronic Information Engineering, Tianjin University, Tianjin 300072 (China); Wang, H.X. [ZHENGHE electronics Co., Ltd, Jining 272023 (China)

    2014-04-01

    Highlights: • Macromolecular materials were chosen to modify thermosetting polyimide (TSPI). • The formation of IPN structure in TSPI composite polymers was discussed. • The special mechanical properties required were the main study object. • The desired candidate materials should have proper hardness and toughness. • The specific mechanical data are quantitatively determined by experiments. - Abstract: Based on interpenetrating networks (IPNs) different macromolecular materials such as epoxy, phenolic, and silicone resin were chosen to modify thermosetting polyimide (TSPI) resin to solve the lack of performance when used for protecting precision foil resistor chips. Copolymerization modification, controlled at curing stage, was used to prepare TSPI composites considering both performance and process requirements. The mechanical properties related to trimming process were mainly studied due to the special requirements of the regularity of scratch edges caused by a tungsten needle. The analysis on scratch edges reveals that the generation and propagation of microcracks caused by scratching together with crack closure effect may lead to regular scratch traces. Experiments show that the elongation at break of TSPI composites is the main reason that determines the special mechanical properties. The desired candidate materials should have proper hardness and toughness, and the specific mechanical data are that the mean elongation at break and tensile strength of polymer materials are in the range of 9.2–10.4% and 100–107 MPa, respectively. Possible reasons for the effect of the modifiers chosen on TSPI polymers, the reaction mechanisms on modified TSPI resin and the IPN structure in TSPI composite polymers were discussed based on IR and TG analysis.

  5. Thermosetting polyimide resin matrix composites with interpenetrating polymer networks for precision foil resistor chips based on special mechanical performance requirements

    International Nuclear Information System (INIS)

    Wang, X.Y.; Ma, J.X.; Li, C.G.; Wang, H.X.

    2014-01-01

    Highlights: • Macromolecular materials were chosen to modify thermosetting polyimide (TSPI). • The formation of IPN structure in TSPI composite polymers was discussed. • The special mechanical properties required were the main study object. • The desired candidate materials should have proper hardness and toughness. • The specific mechanical data are quantitatively determined by experiments. - Abstract: Based on interpenetrating networks (IPNs) different macromolecular materials such as epoxy, phenolic, and silicone resin were chosen to modify thermosetting polyimide (TSPI) resin to solve the lack of performance when used for protecting precision foil resistor chips. Copolymerization modification, controlled at curing stage, was used to prepare TSPI composites considering both performance and process requirements. The mechanical properties related to trimming process were mainly studied due to the special requirements of the regularity of scratch edges caused by a tungsten needle. The analysis on scratch edges reveals that the generation and propagation of microcracks caused by scratching together with crack closure effect may lead to regular scratch traces. Experiments show that the elongation at break of TSPI composites is the main reason that determines the special mechanical properties. The desired candidate materials should have proper hardness and toughness, and the specific mechanical data are that the mean elongation at break and tensile strength of polymer materials are in the range of 9.2–10.4% and 100–107 MPa, respectively. Possible reasons for the effect of the modifiers chosen on TSPI polymers, the reaction mechanisms on modified TSPI resin and the IPN structure in TSPI composite polymers were discussed based on IR and TG analysis

  6. The influence of printed electronics on the recyclability of paper: A case study for smart envelopes in courier and postal services

    Energy Technology Data Exchange (ETDEWEB)

    Aliaga, C., E-mail: caliaga@itene.com [Sustainability Division, Packaging, Transport and Logistics Research Centre, C/Albert Einstein 1, 46980 Paterna, Valencia (Spain); Zhang, H.; Dobon, A.; Hortal, M. [Sustainability Division, Packaging, Transport and Logistics Research Centre, C/Albert Einstein 1, 46980 Paterna, Valencia (Spain); Beneventi, D. [Laboratory of Pulp & Paper Science, Grenoble INP Pagora, 461, Rue de la Papeterie, F-38400 Saint-Martin d’Hères Cedex (France)

    2015-04-15

    Highlights: • Study of the influence of components of printed electronics in paper recycling. • Comparison between paper recycled with and without resistors, batteries and layouts. • Mechanical and optical properties are evaluated in paper handsheets obtained. • Tensile strength of recycled paper is slighted reduced by layouts. • Optical properties of recycled paper slightly varies with layouts and batteries. - Abstract: The aim of this paper is to analyse the effects of the presence of printed electronics on the paper waste streams and specifically on paper recyclability. The analysis is based on a case study focussed on envelopes for postal and courier services provided with these intelligent systems. The smart printed envelope of the study includes a combination of both conventional (thin flexible batteries and resistors) and printed electronic components (conductive track layout based on nanosilver ink). For this purpose, a comparison between envelopes with and without these components (batteries, resistors and conductive track layouts) was carried out through pilot scale paper recycling tests. The generation of rejects during the recycling process as well as the final quality of the recycled paper (mechanical and optical properties) were tested and quantitatively evaluated. The results show that resistors are retained during the screening process in the sieves and consequently they cannot end up in the final screened pulp. Therefore, mechanical and optical properties of the recycled paper are not affected. Nevertheless, inks from the conductive track layouts and batteries were partially dissolved in the process water. These substances were not totally retained in the sieving systems resulting in slight changes in the optical properties of the final recycled paper (variations are 7.2–7.5% in brightness, 8.5–10.7% in whiteness, 1.2–2.2% in L{sup ∗} values, 3.3–3.5% in opacity and 16.1–27% in yellowness). These variations are not in ranges

  7. The influence of printed electronics on the recyclability of paper: A case study for smart envelopes in courier and postal services

    International Nuclear Information System (INIS)

    Aliaga, C.; Zhang, H.; Dobon, A.; Hortal, M.; Beneventi, D.

    2015-01-01

    Highlights: • Study of the influence of components of printed electronics in paper recycling. • Comparison between paper recycled with and without resistors, batteries and layouts. • Mechanical and optical properties are evaluated in paper handsheets obtained. • Tensile strength of recycled paper is slighted reduced by layouts. • Optical properties of recycled paper slightly varies with layouts and batteries. - Abstract: The aim of this paper is to analyse the effects of the presence of printed electronics on the paper waste streams and specifically on paper recyclability. The analysis is based on a case study focussed on envelopes for postal and courier services provided with these intelligent systems. The smart printed envelope of the study includes a combination of both conventional (thin flexible batteries and resistors) and printed electronic components (conductive track layout based on nanosilver ink). For this purpose, a comparison between envelopes with and without these components (batteries, resistors and conductive track layouts) was carried out through pilot scale paper recycling tests. The generation of rejects during the recycling process as well as the final quality of the recycled paper (mechanical and optical properties) were tested and quantitatively evaluated. The results show that resistors are retained during the screening process in the sieves and consequently they cannot end up in the final screened pulp. Therefore, mechanical and optical properties of the recycled paper are not affected. Nevertheless, inks from the conductive track layouts and batteries were partially dissolved in the process water. These substances were not totally retained in the sieving systems resulting in slight changes in the optical properties of the final recycled paper (variations are 7.2–7.5% in brightness, 8.5–10.7% in whiteness, 1.2–2.2% in L ∗ values, 3.3–3.5% in opacity and 16.1–27% in yellowness). These variations are not in ranges able

  8. Significant improvement in the thermal annealing process of optical resonators

    Science.gov (United States)

    Salzenstein, Patrice; Zarubin, Mikhail

    2017-05-01

    Thermal annealing performed during process improves the quality of the roughness of optical resonators reducing stresses at the periphery of their surface thus allowing higher Q-factors. After a preliminary realization, the design of the oven and the electronic method were significantly improved thanks to nichrome resistant alloy wires and chopped basalt fibers for thermal isolation during the annealing process. Q-factors can then be improved.

  9. Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition.

    Science.gov (United States)

    Niu, Gang; Kim, Hee-Dong; Roelofs, Robin; Perez, Eduardo; Schubert, Markus Andreas; Zaumseil, Peter; Costina, Ioan; Wenger, Christian

    2016-06-17

    With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO2-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm complementary-metal-oxide-semiconductor (CMOS) process line, using a batch atomic layer deposition (ALD) tool, which is particularly designed for mass production. We demonstrate a systematic study on TiN/Ti/HfO2/TiN/Si RRAM devices to correlate key material factors (nano-crystallites and carbon impurities) with the filament type resistive switching (RS) behaviours. The augmentation of the nano-crystallites density in the film increases the forming voltage of devices and its variation. Carbon residues in HfO2 films turn out to be an even more significant factor strongly impacting the RS behaviour. A relatively higher deposition temperature of 300 °C dramatically reduces the residual carbon concentration, thus leading to enhanced RS performances of devices, including lower power consumption, better endurance and higher reliability. Such thorough understanding on physical mechanism of RS and the correlation between material and device performances will facilitate the realization of high density and reliable embedded RRAM devices with low power consumption.

  10. Elektrische apparaten van de ‘Nederlandsche Optiek- en Instrumentenfabriek Dr. C.E. Bleeker’

    Directory of Open Access Journals (Sweden)

    Kees Ruitenbeek

    2015-02-01

    Full Text Available Bleeker’s Electrical Instruments Mrs. Dr. C.E. Bleeker (1897–1985 led a company in optical and electrical instruments since 1932. While her optical instruments – including Prof. Frits Zernike’s Nobel Prize-winning phase contrast microscope – are well known, she also made a name in electrical devices. In addition to a series of highly accurate resistors – normal resistors, precision resistors and resistor banks – a range of electrical instruments were developed, such as Wheatstone bridges and compensators. In 1963, Dr Bleeker retired, but her firm continued until 1978, when nearly all activities ceased. Only the interests in Bleeker’s range of resistors continued. The current manufacturer still refers to ‘Bleeker’s principle’ in rela- tion to the quality of the resistors.

  11. A 2-megawatt load for testing high voltage DC power supplies

    International Nuclear Information System (INIS)

    Horan, D.; Kustom, R.; Ferguson, M.; Primdahl, K.

    1993-01-01

    A high power water-cooled resistive load, capable of dissipating 2 Megawatts at 95 kilovolts is being designed and built. The load utilizes wirewound resistor elements suspended inside insulating tubing contained within a pressure vessel which is supplied a continuous flow of deionized water for coolant. A sub-system of the load is composed of non-inductive resistor elements in an oil tank. Power tests conducted on various resistor types indicate that dissipation levels as high as 22 times the rated dissipation in air can be achieved when the resistors are placed in a turbulent water flow of at least 15 gallons per minute. Using this data, the load was designed using 100 resistor elements in a series arrangement. A single-wall 316 stainless steel pressure vessel with flanged torispherical heads is built to contain the resistor assembly and deionized water. The resistors are suspended within G-11 tubing which span the cylindrical length of the vessel. These tubes are supported by G-10 baffles which also increase convection from the tubes by promoting turbulence within the surrounding water

  12. Degenerated differential pair with controllable transconductance

    NARCIS (Netherlands)

    Mensink, Clemens; Mensink, Clemens H.J.; Nauta, Bram

    1998-01-01

    A differential pair with input transistors and provided with a variable degeneration resistor. The degeneration resistor comprises a series arrangement of two branches of coupled resistors which are shunted in mutually corresponding points by respective control transistors whose gates are

  13. The Development Of Windows Service Based Data Log System Using Light Dependent Resistor And Thingspeak IOT Cloud Platform

    Directory of Open Access Journals (Sweden)

    Tristan Jay P. Calaguas

    2017-03-01

    Full Text Available Microcontrollers are using in control and information processing it can be used in wide application such as agriculture health care commercial facilities robotics and education. These micro controllers are computers in chip that comprises of input and output ports central processing unit registers and main memory as well as communication interface such as Ethernet interface serial interface High Definition Multimedia Interface power source and many existing interface that can be found in this type of computer. In this study the researcher decided to conceptualize an innovative application of this type of computer where it has a potential to use as tracking system in specific individuals activities. Since some of office people are complaining in CCTV camera about their privacy this innovative concept of technology is in similar purpose but if we will compare the application concept in closed circuit camera the researcher decided to use visual graph instead video data that is in high exposure In the first phase the researcher made a concept on how the simple Light Dependent Resistor will apply in Schools Office Environment Application domain using microcontroller that was used as data log system and how this can be optimized without forcing the Dean or any designated person in office to operate it in hand due to their busy working hours. In the second phase the researcher develop the proposed data log system that are acquiring data through light luminance from fluorescent light of deans office and sending it in the IOT cloud platform. The researcher used fuzzy logic theory to model the operation of the proposed data log system. This study used experimental type of research when the prototype was developed during second phase the researcher simulated the operation. As the result the proposed data log system is sending data to Thingspeak IOT Cloud platform it displays the correct output which based from the rules and it is in column graph content

  14. Modern electronic materials

    CERN Document Server

    Watkins, John B

    2013-01-01

    Modern Electronic Materials focuses on the development of electronic components. The book first discusses the history of electronic components, including early developments up to 1900, developments up to World War II, post-war developments, and a comparison of present microelectric techniques. The text takes a look at resistive materials. Topics include resistor requirements, basic properties, evaporated film resistors, thick film resistors, and special resistors. The text examines dielectric materials. Considerations include basic properties, evaporated dielectric materials, ceramic dielectri

  15. Braided multi-electrode probes: mechanical compliance characteristics and recordings from spinal cords

    Science.gov (United States)

    Kim, Taegyo; Branner, Almut; Gulati, Tanuj; Giszter, Simon F.

    2013-08-01

    Objective. To test a novel braided multi-electrode probe design with compliance exceeding that of a 50 µm microwire, thus reducing micromotion- and macromotion-induced tissue stress. Approach. We use up to 24 ultra-fine wires interwoven into a tubular braid to obtain a highly flexible multi-electrode probe. The tether-portion wires are simply non-braided extensions of the braid structure, allowing the microprobe to follow gross neural tissue movements. Mechanical calculation and direct measurements evaluated bending stiffness and axial compression forces in the probe and tether system. These were compared to 50 µm nichrome microwire standards. Recording tests were performed in decerebrate animals. Main results. Mechanical bending tests on braids comprising 9.6 or 12.7 µm nichrome wires showed that implants (braided portions) had 4 to 21 times better mechanical compliance than a single 50 µm wire and non-braided tethers were 6 to 96 times better. Braided microprobes yielded robust neural recordings from animals' spinal cords throughout cord motions. Significance. Microwire electrode arrays that can record and withstand tissue micro- and macromotion of spinal cord tissues are demonstrated. This technology may provide a stable chronic neural interface into spinal cords of freely moving animals, is extensible to various applications, and may reduce mechanical tissue stress.

  16. Research for Forming up the Controlling Diagram Utilizing the Connection of a LV Resistor on Voltage Transformer’s Open-Triagle Coil to Reduce over Voltage Caused by Earth Fault in 6 kV Grid of QuangNinh Underground Mines

    Directory of Open Access Journals (Sweden)

    Viet Bun Ho

    2018-01-01

    Full Text Available Single phase earth-fault in MV grids usually causes overvoltage that harm to human being and electric equipment. If the magnitude of over voltage is so great, many grids’ eco-technical parameters will be affected. The paper analyzes all possible consequences of over voltage occurred in 6 kV grid of QuangNinh underground mines. Base on the analysis, a controlling diagram utilizing the connection of a LV resistor on voltage transformer’s open-triangle coil to reduce over voltage is recommended. The simulation results of the diagram are used to prove the effectiveness of solution: the over voltage magnitude is only in the range of (2,1–2,4.Uf. Other advantage that solution brings to relay system will be pointed out.

  17. OSL and TL of Resistors of Mobile Phones for Retrospective Accident Dosimetry

    Energy Technology Data Exchange (ETDEWEB)

    Lee, J. I.; Kim, J. L.; Pradhan, A. S.; Chang, I.; Kim, B. H. [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2012-05-15

    work place and in the public rather than actual health hazard due to radiation exposure. Therefore, a quick demonstration of measurement of doses following the accident is needed to reassure those receiving insignificant or low level of exposures that they are quite safe and need no treatment. This confidence building also becomes an important aspect of dosimetry. As the ranges of doses which could be encountered in such situations may vary from the background level to significantly high doses depending on the type of accident / incident and the location of personnel, it becomes important that the techniques used in retrospective dosimetry should be very sensitive and should be able to measure doses in a wide range from background level to several Gy. More recently, with the increasing apprehensions of nuclear terrorism / dirty bomb, research and developments in retrospective dosimetry has gained a new momentum the world over. Among the TL and OSL sensitive materials, the extraction and the processing of the materials from bricks and roof tiles is a very time consuming process and gives indirect estimate of individual doses. On the other hand, TL and OSL properties of components of electronic devices mobile phones, i-pods, black-berries, mp3 players and USB sticks containing ceramics with luminescence properties (e.g resistors, capacitors, resonators, antenna switches, transistors etc.) and chip cards containing silica epoxy (e.g. credit cards, bank cards, social security card, telephone card, SIM cards, ID cards e.g) are being considered very attractive and being evaluated. In this study, the TL and OSL properties of the electronic components of mobile phones are investigated and dose recovery potential is evaluated with a presumption that a mobile phone has become a part of body belongings masses of almost ages

  18. OSL and TL of Resistors of Mobile Phones for Retrospective Accident Dosimetry

    International Nuclear Information System (INIS)

    Lee, J. I.; Kim, J. L.; Pradhan, A. S.; Chang, I.; Kim, B. H.

    2012-01-01

    and in the public rather than actual health hazard due to radiation exposure. Therefore, a quick demonstration of measurement of doses following the accident is needed to reassure those receiving insignificant or low level of exposures that they are quite safe and need no treatment. This confidence building also becomes an important aspect of dosimetry. As the ranges of doses which could be encountered in such situations may vary from the background level to significantly high doses depending on the type of accident / incident and the location of personnel, it becomes important that the techniques used in retrospective dosimetry should be very sensitive and should be able to measure doses in a wide range from background level to several Gy. More recently, with the increasing apprehensions of nuclear terrorism / dirty bomb, research and developments in retrospective dosimetry has gained a new momentum the world over. Among the TL and OSL sensitive materials, the extraction and the processing of the materials from bricks and roof tiles is a very time consuming process and gives indirect estimate of individual doses. On the other hand, TL and OSL properties of components of electronic devices mobile phones, i-pods, black-berries, mp3 players and USB sticks containing ceramics with luminescence properties (e.g resistors, capacitors, resonators, antenna switches, transistors etc.) and chip cards containing silica epoxy (e.g. credit cards, bank cards, social security card, telephone card, SIM cards, ID cards e.g) are being considered very attractive and being evaluated. In this study, the TL and OSL properties of the electronic components of mobile phones are investigated and dose recovery potential is evaluated with a presumption that a mobile phone has become a part of body belongings masses of almost ages

  19. Predictors of response to a nasal expiratory resistor device and its potential mechanisms of action for treatment of obstructive sleep apnea.

    Science.gov (United States)

    Patel, Amit V; Hwang, Dennis; Masdeu, Maria J; Chen, Guo-Ming; Rapoport, David M; Ayappa, Indu

    2011-02-15

    A one-way nasal resistor has recently been shown to reduce sleep disordered breathing (SDB) in a subset of patients with Obstructive Sleep Apnea Hypopnea Syndrome (OSAHS). The purpose of this study was to examine characteristics predictive of therapeutic response to the device and provide pilot data as to its potential mechanisms of action. PATIENTS, INTERVENTIONS, AND MEASUREMENTS: 20 subjects (15M/5F, age 54 ± 12 years, BMI 33.5 ± 5.6 kg/m²) with OSAHS underwent 3 nocturnal polysomnograms (NPSG) including diagnostic, therapeutic (with a Provent® nasal valve device), and CPAP. Additional measurements included intranasal pressures and PCO₂, closing pressures (Pcrit), and awake lung volumes in different body positions. In 19/20 patients who slept with the device, RDI was significantly reduced with the nasal valve device compared to the diagnostic NPSG (27 ± 29/h vs 49 ± 28/h), with 50% of patients having an acceptable therapeutic response. Among demographic, lung volume, or diagnostic NPSG measures or markers of collapsibility, no significant predictors of therapeutic response were found. There was a suggestion that patients with position-dependent SDB (supine RDI > lateral RDI) were more likely to have an acceptable therapeutic response to the device. Successful elimination of SDB was associated with generation and maintenance of an elevated end expiratory pressure. No single definitive mechanism of action was elucidated. The present study shows that the nasal valve device can alter SDB across the full spectrum of SDB severity. There was a suggestion that subjects with positional or milder SDB in the lateral position were those most likely to respond.

  20. Physicomechanical properties of porous fiber materials and prediction of them

    International Nuclear Information System (INIS)

    Kostornov, A.G.; Galstyan, L.G.

    1985-01-01

    A comparison is presented of the experimentally determined values of certain properties of porous fiber materials obtained by the optimum method from monodisperse fibers of copper, nickel, and Nichrome of different diameters with the corresponding theoretical values. The electrical conductivity, tensile strength, and modulus of elasticity, the basic properties of a porous body, which are determined both by the structural characteristics of the elements and by the condition of the interparticle contacts, were considered

  1. Heater design for reading radiation dosimeters

    International Nuclear Information System (INIS)

    Seidel, J.G.; Felice, P.E.

    1982-01-01

    The nichrome heating element of a conventional dosimeter reading apparatus has been redesigned to include a flat-bottomed depression big enough to hold a thermoluminescent dosimeter. A thin glass plate is positioned in the recess on top of the dosimeter to retain it in the recess during the heating and reading process. This technique of securing the dosimeter in contact with the heating element avoids physical scratching or damage to the dosimeter

  2. Alternative connections for the large MFTF-B solenoids

    International Nuclear Information System (INIS)

    Owen, E.W.; Shimer, D.W.; Wang, S.T.

    1983-01-01

    The MFTF-B central-cell solenoids are a set of twelve closely coupled, large superconducting magnets with similar but not exactly equal currents. Alternative methods of connecting them to their power supplies and dump resistors are investigated. The circuits are evaluated for operating conditions and fault conditions. The factors considered are the voltage to ground during a dump, short circuits, open circuits, quenches, and failure of the protection system to detect a quench. Of particular interest are the current induced in coils that remain superconducting when one or more coils quench. The alternative connections include separate power supplies, combined power supplies, individual dump resistors, series dump resistors and combinations of these. A new circuit that contains coupling resistors is proposed. The coupling resistors do not affect normal fast dumps but reduce the peak induced currents while also reducing the energy rating of the dump resistors. Another novel circuit, the series circuit with diodes, is discussed in detail

  3. A Study of Photoreceivers for Free-Space, Analog, Intensity-Modulated, Direct-Detection Optical Links Operating at Microwave Frequencies

    Science.gov (United States)

    2010-09-10

    photodiode with internal resistor followed by a high-gain RF amplifier , and c) a p-i-n photodiode followed by a transimpedance amplifier (TIA). We...gain, RF electrical amplifier ; and 3) a p-i-n photodiode followed by a transimpedance amplifier . Finally, we perform calculations to predict the...common photoreceiver is a p-i-n or avalanche photodiode with a built-in transimpedance amplifier (TIA) and often incorporating automatic gain control

  4. An automatic device for charging a storage battery

    Energy Technology Data Exchange (ETDEWEB)

    Pasyukov, A A

    1984-01-01

    The purpose of the invention is to increase the service life of storage batteries (AB) through ensuring automatic protection of the device from overloads with short circuits (KZ) and from incorrect switching polarity of the storage batteries. The device contains a transformer, a rectifier, a smoothing capacitor, a trigger capacitor, a charge current control transistor, a controllable transistor, a shielding transistor, two resistors, a diode, a resistor and a voltage divider, another resistor, a reference voltage stabilitron, a resistor and another diode and the storage battery.

  5. High density microelectronics package using low temperature cofirable ceramics

    International Nuclear Information System (INIS)

    Fu, S.-L.; Hsi, C.-S.; Chen, L.-S.; Lin, W. K.

    1997-01-01

    Low Temperature Cofired Ceramics (LTCC) is a relative new thick film process and has many engineering and manufacturing advantages over both the sequential thick film process and high temperature cofired ceramic modules. Because of low firing temperature, low sheet resistance metal conductors, commercial thick film resistors, and thick film capacitors can be buried in or printed on the substrates. A 3-D multilayer ceramic substrate can be prepared via laminating and co-firing process. The packing density of the LTCC substrates can be increased by this 3-D packing technology. At Kaohsiung Polytechnic Institute (KPI), a LTCC substrate system has been developed for high density packaging applications, which had buried surface capacitors and resistors. The developed cordierite-glass ceramic substrate, which has similar thermal expansion as silicon chip, is a promising material for microelectronic packaging. When the substrates were sintered at temperatures between 850-900 degree centigrade, a relative density higher than 96 % can be obtained. The substrate had a dielectric constant between 5.5 and 6.5. Ruthenium-based resistor pastes were used for resistors purposes. The resistors fabricated in/on the LTCC substrates were strongly depended on the microstructures developed in the resistor films. Surface resistors were laser trimmed in order to obtain specific values for the resistors. Material with composition Pb(Fe 2/3 W 1/3 ) x (Fe l/2 Nb l/2 ) y Ti 2 O 3 was used as dielectric material of the capacitor in the substrate. The material can be sintered at temperatures between 850-930 degree centigrade, and has dielectric constant as high as 26000. After cofiring, good adhesion between dielectric and substrate layers was obtained. Combing the buried resistors and capacitors together with the lamination of LTCC layer, a 3-dimensional multilayered ceramic package was fabricated. (author)

  6. High density microelectronics package using low temperature cofirable ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Fu, S -L; Hsi, C -S; Chen, L -S; Lin, W K [Kaoshiung Polytechnic Institute Ta-Hsu, Kaoshiung (China)

    1998-12-31

    Low Temperature Cofired Ceramics (LTCC) is a relative new thick film process and has many engineering and manufacturing advantages over both the sequential thick film process and high temperature cofired ceramic modules. Because of low firing temperature, low sheet resistance metal conductors, commercial thick film resistors, and thick film capacitors can be buried in or printed on the substrates. A 3-D multilayer ceramic substrate can be prepared via laminating and co-firing process. The packing density of the LTCC substrates can be increased by this 3-D packing technology. At Kaohsiung Polytechnic Institute (KPI), a LTCC substrate system has been developed for high density packaging applications, which had buried surface capacitors and resistors. The developed cordierite-glass ceramic substrate, which has similar thermal expansion as silicon chip, is a promising material for microelectronic packaging. When the substrates were sintered at temperatures between 850-900 degree centigrade, a relative density higher than 96 % can be obtained. The substrate had a dielectric constant between 5.5 and 6.5. Ruthenium-based resistor pastes were used for resistors purposes. The resistors fabricated in/on the LTCC substrates were strongly depended on the microstructures developed in the resistor films. Surface resistors were laser trimmed in order to obtain specific values for the resistors. Material with composition Pb(Fe{sub 2/3}W{sub 1/3}){sub x}(Fe{sub l/2}Nb{sub l/2}){sub y}Ti{sub 2}O{sub 3} was used as dielectric material of the capacitor in the substrate. The material can be sintered at temperatures between 850-930 degree centigrade, and has dielectric constant as high as 26000. After cofiring, good adhesion between dielectric and substrate layers was obtained. Combing the buried resistors and capacitors together with the lamination of LTCC layer, a 3-dimensional multilayered ceramic package was fabricated. (author)

  7. Strand Burner Results of AFP-001 Propellant with Inert Coating for Temperature Compensation

    Science.gov (United States)

    2015-10-01

    there were 4 different configurations: baseline, a C-100 coated, an SC-11 coated, and a urethane acrylate (UA) coated. C-100 is a polyurea based...coating, SC-11 is an epoxy-based coating, and UA is a urethane- acrylate -based coating. These coatings were chosen to target a specific strength...Ignition was achieved by running current through a nichrome wire placed on top of the sample. Events were recorded with a Phantom high-speed camera

  8. Integral Battery Power Limiting Circuit for Intrinsically Safe Applications

    Science.gov (United States)

    Burns, Bradley M.; Blalock, Norman N.

    2010-01-01

    switch and the inductor configuration. In the fault condition, both the resistor and the inductor react immediately. The resistor reacts by allowing more current to flow and dropping the voltage. Initially, the inductor reacts by dropping the voltage, and then by not allowing the current to change. When the comparator detects the drop in voltage, it opens the switch, thus preventing any further current flow. The inductor alone is not sufficient protection, because after the voltage drop has settled, the inductor would then allow the current to change, in this example, the current would be 3.7 A. In the fault condition, the resistor is flowing 200 mA until the fuse blows (anywhere from 1 ms to 100 s), while the switch and inductor combination is flowing about 2 A test current while monitoring for the fault to be corrected. Finally, as an additional safety feature, the circuit can be configured to hold the switch opened until both the load and source are disconnected.

  9. TU-CD-304-09: Feasibility Study for Thermoplastic Mask Set Up Monitoring Using Force Sensing Resistor (FSR) Sensor

    International Nuclear Information System (INIS)

    Kim, T; Cho, M; Kang, S; Kim, D; Kim, K; Shin, D; Suh, T; Kim, S

    2015-01-01

    Purpose: To improve the setup accuracy of thermoplastic mask, we developed a new monitoring method based on force sensing technology and evaluated its feasibility. Methods: The thermoplastic mask setup monitoring system consists of a force sensing resistor sensor unit, a signal transport device, a control PC and an in-house software. The system is designed to monitor pressure variation between the mask and patient in real time. It also provides a warning to the user when there is a possibility of movement. A preliminary study was performed to evaluate the reliability of the sensor unit and developed monitoring system with a head phantom. Then, a simulation study with volunteers was conducted to evaluate the feasibility of the monitoring system. Note that the sensor unit can have multiple end-sensors and every end-sensor was confirmed to be within 2% reliability in pressure reading through a screening test. Results: To evaluate the reproducibility of the proposed monitoring system in practice, we simulated a mask setup with the head phantom. FRS sensors were attached on the face of the head phantom and pressure was monitored. For 3 repeated mask setups on the phantom, the variation of the pressure was less than 3% (only 1% larger than 2% potential uncertainty confirmed in the screening test). In the volunteer study, we intended to verify that the system could detect patient movements within the mask. Thus, volunteers were asked to turn their head or lift their chin. The system was able to detect movements effectively, confirming the clinical feasibility of the monitoring system developed. Conclusion: Through the proposed setup monitoring method, it is possible to monitor patient motion inside a mask in real time, which has never been possible with most commonly used systems using non-radiographic technology such as infrared camera system and surface imaging system. This work was supported by the Radiation Technology R&D program (No. 2013M2A2A7043498) and the Mid

  10. TU-CD-304-09: Feasibility Study for Thermoplastic Mask Set Up Monitoring Using Force Sensing Resistor (FSR) Sensor

    Energy Technology Data Exchange (ETDEWEB)

    Kim, T; Cho, M; Kang, S; Kim, D; Kim, K; Shin, D; Suh, T [The Catholic University of Korea College of Medicine, Seoul (Korea, Republic of); Kim, S [Virginia Commonwealth University, Richmond, VA (United States)

    2015-06-15

    Purpose: To improve the setup accuracy of thermoplastic mask, we developed a new monitoring method based on force sensing technology and evaluated its feasibility. Methods: The thermoplastic mask setup monitoring system consists of a force sensing resistor sensor unit, a signal transport device, a control PC and an in-house software. The system is designed to monitor pressure variation between the mask and patient in real time. It also provides a warning to the user when there is a possibility of movement. A preliminary study was performed to evaluate the reliability of the sensor unit and developed monitoring system with a head phantom. Then, a simulation study with volunteers was conducted to evaluate the feasibility of the monitoring system. Note that the sensor unit can have multiple end-sensors and every end-sensor was confirmed to be within 2% reliability in pressure reading through a screening test. Results: To evaluate the reproducibility of the proposed monitoring system in practice, we simulated a mask setup with the head phantom. FRS sensors were attached on the face of the head phantom and pressure was monitored. For 3 repeated mask setups on the phantom, the variation of the pressure was less than 3% (only 1% larger than 2% potential uncertainty confirmed in the screening test). In the volunteer study, we intended to verify that the system could detect patient movements within the mask. Thus, volunteers were asked to turn their head or lift their chin. The system was able to detect movements effectively, confirming the clinical feasibility of the monitoring system developed. Conclusion: Through the proposed setup monitoring method, it is possible to monitor patient motion inside a mask in real time, which has never been possible with most commonly used systems using non-radiographic technology such as infrared camera system and surface imaging system. This work was supported by the Radiation Technology R&D program (No. 2013M2A2A7043498) and the Mid

  11. Electronic circuit for control rod attracting electromagnet

    International Nuclear Information System (INIS)

    Ito, Koji.

    1991-01-01

    The present invention provides a discharging circuit for control rod attracting electromagnet used for a reactor which is highly reliable and has high performance. The resistor of the circuit comprises a non-linear resistor element and a blocking rectification element connected in series. The discharging circuit can be prevented from short-circuit by selecting a resistor having a resistance value about ten times as great as the coil resistance, even in a case where the blocking rectification element and the non-linear resistor element are failed. Accordingly, reduction of attracting force and the increase of scream releasing time can be minimized. (I.S.)

  12. Analogue network for the study of electric and magnetic fields with cylindrical symmetry

    International Nuclear Information System (INIS)

    Sanchez del Rio, C.; Santiago, S.; Verdaguer, F.

    1960-01-01

    A resistor network is described which can be used to solve the partial differential equations for the scalar potential and for the only component of the vector potential in problems with cylindrical symmetry. To calculate the values of the resistors a general method is presented valid for any equation which can be solved by the resistor network analogy. (Author) 2 refs

  13. Electromagnetic Component Research

    Science.gov (United States)

    2009-12-01

    19 15: (a) 94 GHz Antenna Feeds Suspended Resistor (b) Thermopile Test Structure (c) Thermopile DC Voltage-Power Response...EMTs by implementing a fully coupled electro-mechanical formulation based upon the piezoe lectric constitutive equations for stress and electric... resistor , thermally isolated from the underlying substrate by micromachining. Energy received by the antenna is dissipated in the resistor causing the

  14. Analogue network for the study of electric and magnetic fields with cylindrical symmetry

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez del Rio, C; Santiago, S; Verdaguer, F

    1960-07-01

    A resistor network is described which can be used to solve the partial differential equations for the scalar potential and for the only component of the vector potential in problems with cylindrical symmetry. To calculate the values of the resistors a general method is presented valid for any equation which can be solved by the resistor network analogy. (Author) 2 refs.

  15. Device for flame combustion of liquid or solid samples in radioactive isotope trace indication

    International Nuclear Information System (INIS)

    Kaartinen, N.H.

    1979-01-01

    The plant or animal tissue containing T and/or 14 C isotope indicator is in a small ignition cage within the combustion chamber. The ignition cage consists of Nichrome which supports the ignition procedure. The combustion chamber is maintained at a temperature above the condensation temperature of the vapours escaping from the tissue (e.g. H 2 O). The thimble type ignition cage burns uniformly together with the sample. It is no longer necessary to make pellets of the sample. (DG) [de

  16. The dual cycle bridge detection of piezoresistive triaxial accelerometer based on MEMS technology

    International Nuclear Information System (INIS)

    Zhang Juanting; He Changde; Zhang Hui; Li Yuping; Du Chunhui; Zhang Wendong; Zhang Yongping

    2014-01-01

    A cycle bridge detection method, which uses a piezoresistive triaxial accelerometer, has been described innovatively. This method just uses eight resistors to form a cycle detection bridge, which can detect the signal of the three directions for real time. It breaks the law of the ordinary independent Wheatstone bridge detection method, which uses at least 12 resistors and each four resistors connected as a Wheatstone bridge to detect the output signal from a specific direction. In order to verify the feasibility of this method, the modeling and simulating of the sensor structure have been conducted by ANSYS, then the dual cycle bridge detection method and independent Wheatstone bridge detection method are compared, the result shows that the former method can improve the sensitivity of the sensor effectively. The sensitivity of the x, y-axis used in the former method is two times that of the sensor used in the latter method, and the sensitivity of the z-axis is four times. At the same time, it can also reduce the cross-axis coupling degree of the sensor used in the dual cycle bridge detection method. In addition, a signal amplifier circuit and adder circuit have been provided. Finally, the test result of the “eight-beams/mass” triaxial accelerometer, which is based on the dual cycle bridge detection method and the related circuits, have been provided. The results of the test and the theoretical analysis are consistent, on the whole. (semiconductor devices)

  17. Improved voltage gradient control system for electrostatic accelerators

    International Nuclear Information System (INIS)

    Jones, N.L.; Dittner, P.F.

    1993-01-01

    An improved voltage gradient control system has been designed and installed in the EN tandem at the Oak Ridge National Laboratory. An improved design was sought due to high failure rates, increasing replacement parts and labor costs, and decreasing availability of the original carbon film resistor systems supplied for the EN-12 at ORNL. The resulting system utilizes two inexpensive, readily available, metal oxide resistors in series between each plane. They are protected by coaxial stainless steel shielding tubes, and spark gaps across individual resistors and adjacent pairs. The new resistors mount atop the column bridge in a compact configuration. This permits easy access both to the resistors and to the interior column components such as the belt. Well controlled gradients now provide improved machine performance. Both initial capital outlay and future maintenance result in reduced costs. Design, installation, performance, and cost details are reported. (orig.)

  18. The influence of printed electronics on the recyclability of paper: a case study for smart envelopes in courier and postal services.

    Science.gov (United States)

    Aliaga, C; Zhang, H; Dobon, A; Hortal, M; Beneventi, D

    2015-04-01

    The aim of this paper is to analyse the effects of the presence of printed electronics on the paper waste streams and specifically on paper recyclability. The analysis is based on a case study focussed on envelopes for postal and courier services provided with these intelligent systems. The smart printed envelope of the study includes a combination of both conventional (thin flexible batteries and resistors) and printed electronic components (conductive track layout based on nanosilver ink). For this purpose, a comparison between envelopes with and without these components (batteries, resistors and conductive track layouts) was carried out through pilot scale paper recycling tests. The generation of rejects during the recycling process as well as the final quality of the recycled paper (mechanical and optical properties) were tested and quantitatively evaluated. The results show that resistors are retained during the screening process in the sieves and consequently they cannot end up in the final screened pulp. Therefore, mechanical and optical properties of the recycled paper are not affected. Nevertheless, inks from the conductive track layouts and batteries were partially dissolved in the process water. These substances were not totally retained in the sieving systems resulting in slight changes in the optical properties of the final recycled paper (variations are 7.2-7.5% in brightness, 8.5-10.7% in whiteness, 1.2-2.2% in L(∗) values, 3.3-3.5% in opacity and 16.1-27% in yellowness). These variations are not in ranges able to cause problems in current paper recycling processes and restrict the use of recycled paper in current applications. Moreover, real impacts on industrial recycling are expected to be even significantly lower since the proportion of paper product with printed circuits in the current paper waste streams are much lower than the ones tested in this work. However, it should be underlined the fact that this situation may change over the next

  19. Ethical aspects of final disposal. Final report

    International Nuclear Information System (INIS)

    Baltes, B.; Leder, W.; Achenbach, G.B.; Spaemann, R.; Gerhardt, V.

    2003-01-01

    In fulfilment of this task the Federal Environmental Ministry has commissioned GRS to summarise the current national and international status of ethical aspects of the final disposal of radioactive wastes as part of the project titled ''Final disposal of radioactive wastes as seen from the viewpoint of ethical objectives''. The questions arising from the opinions, positions and publications presented in the report by GRS were to serve as a basis for an expert discussion or an interdisciplinary discussion forum for all concerned with the ethical aspects of an answerable approach to the final disposal of radioactive wastes. In April 2001 GRS held a one-day seminar at which leading ethicists and philosophers offered statements on the questions referred to above and joined in a discussion with experts on issues of final disposal. This report documents the questions that arose ahead of the workshop, the specialist lectures held there and a summary of the discussion results [de

  20. On the use of new generation mobile phone (smart phone) for retrospective accident dosimetry

    International Nuclear Information System (INIS)

    Lee, J.I.; Chang, I.; Pradhan, A.S.; Kim, J.L.; Kim, B.H.; Chung, K.S.

    2015-01-01

    Optically stimulated luminescence (OSL) characteristics of resistors, inductors and integrated-circuit (IC) chips, extracted from new generation smart phones, were investigated for the purpose of retrospective accident dosimetry. Inductor samples were found to exhibit OSL sensitivity about 5 times and 40 times higher than that of the resistors and the IC chips, respectively. On post-irradiation storage, the resistors exhibited a much higher OSL fading (about 80 % in 36 h as compared to the value 3 min after irradiation) than IC chips (about 20 % after 36 h) and inductors (about 50 % in 36 h). Higher OSL sensitivity, linear dose response (from 8.7 mGy up to 8.9 Gy) and acceptable fading make inductors more attractive for accident dosimetry than widely studied resistors. - Highlights: • OSL properties of electronic components from a smart phone were investigated. • OSL Sensitivity of inductor was estimated to 5 times higher than that of resistor. • Inductor exhibits most attractive properties for retrospective accident dosimetry.

  1. Quadrupole magnetic lens

    International Nuclear Information System (INIS)

    Piskunov, V.A.

    1981-01-01

    The following connection of windings of electromagnet is suggested for simplification of the design of qUadrupole magnetic lens intended for use in radiotechnical and electron-optical devices. The mentioned windings are connected with each other by a bridge scheme and the variable resistors are switched in its diagonals in the lens containing four electromagnet with windings connected with two variable resistors the mobile contacts of which are connected with a direct current source. Current redistribution between left windings and right windings takes place at shift of mobile contact of variable resistor, and current redistribution between upper and low coils of electromagnets takes place at shifting mobile contact of the other variable resistor. In this case smooth and independent electron-optical misalignment of lens by two mutually perpendicular directions proceeds. Use of the given design of the lens in the oscillograph permits to use printing assembly for alignment plate and to reduce the number of connections at the expense of decreasing the number of resistors

  2. Single ICCII Sinusoidal Oscillators Employing Grounded Capacitors

    Directory of Open Access Journals (Sweden)

    J. W. Horng

    2011-09-01

    Full Text Available Two inverting second-generation current conveyors (ICCII based sinusoidal oscillators are presented. The first sinusoidal oscillator is composed of one ICCII, two grounded capacitors and two resistors. The oscillation condition and oscillation frequency can be orthogonally controllable. The second sinusoidal oscillator is composed of one ICCII, two grounded capacitors and three resistors. The oscillation condition and oscillation frequency can be independently controllable through different resistors.

  3. Parts, Materials, and Processes Control Program for Expendable Launch Vehicles

    Science.gov (United States)

    2015-07-31

    Resistors 1. All hollow glass or hollow ceramic core devices 2. Unpassivated Nicrome film resistors F-6 3. All hermetic hollow ceramic core film...be the core material, the insulation of the magnet, etc. 2/ Current rating for each winding shall be less than or equal to the rating for a bundle...Instrument Type, General Specification for MIL-PRF-23648 Resistors, Thermal (Thermistor) Insulated , General Specification for MIL-DTL-24308

  4. Temperature measuring device

    International Nuclear Information System (INIS)

    Brixy, H.

    1977-01-01

    The temperature measuring device is equipped with an electric resistor installed within a metal shroud tube so as to be insulated from it, the noise voltage of which resistor is fed to a measuring unit. The measuring junctions of one or two thermocouples are connected with the electric resistor and the legs of one or both thermocouples can be connected to the measuring unit by means of a switch. (orig.) [de

  5. Thermal noise engines

    OpenAIRE

    Kish, Laszlo B.

    2010-01-01

    Electrical heat engines driven by the Johnson-Nyquist noise of resistors are introduced. They utilize Coulomb's law and the fluctuation-dissipation theorem of statistical physics that is the reverse phenomenon of heat dissipation in a resistor. No steams, gases, liquids, photons, combustion, phase transition, or exhaust/pollution are present here. In these engines, instead of heat reservoirs, cylinders, pistons and valves, resistors, capacitors and switches are the building elements. For the ...

  6. Development of Localized Arc Filament RF Plasma Actuators for High-Speed and High Reynolds Number Flow Control

    Science.gov (United States)

    2010-01-01

    high-speed flows is problematic due to their low forcing frequency (for mechanical actuators) and low forcing amplitude (for piezo actuators...very low fraction of DC power is coupled to the actuators (5-10%), with the rest of the power dissipated in massive ballast resistors acting as heat... resistors . The use of high-power resistors also significantly increases the weight and size of the plasma generator and makes scaling to a large number of

  7. Passive and active elements using fractional Lβ C α circuit

    KAUST Repository

    Radwan, Ahmed G.

    2011-10-01

    This paper introduces a qualitative revision of the traditional LC tank circuit in the fractional domain. The paper can be divided into six major parts, aiming in turn to establish the various conditions under which L βCα impedance may act as a resistor, negative resistor, or a positive or negative pure imaginary inductor or capacitor, in accordance to new frequency definitions; illustrate the process by which the phase response chooses the shortest path from initial to final phase, and use this illustration to verify the cases discussed in part one; develop the generalized parameters for the bandpass filter response of the L βCα circuit, such as the resonance frequency and quality factor versus α-β plane; discuss sensitivity analyses with respect to the fractional orders, as well as the time domain analyses for the impulse and step responses with their analytical formulas; and lastly, to propose some possible applications for this generalized circuit. Mathematical and PSpice simulation results are included to validate the discussion. © 2011 IEEE.

  8. The ITER poloidal field system: control and power supplies

    International Nuclear Information System (INIS)

    Mondino, P.L.; Benfatto, I.; Gribov, Y.; Matsukawa, M.; Odajima, K.; Portone, A.; Roshal, A.; Bareyt, B.; Bertolini, E.; Bottereau, J.M.; Huart, M.; Maschio, A.; Bulgakov, S.; Kuchinski, V.

    1995-01-01

    The paper reports the preliminary scenario of the ITER Poloidal Field (PF) system operation, the method used to evaluate the installed power, the basic structure of the circuits and finally the concepts of the preliminary design of control and power supply. The superconducting coils are energized from the HV Grid with conventional AC/DC converters. R and D is required for circuit breakers, make switches and resistors, the basic components of both the switching networks and the discharge circuits. (orig.)

  9. Ultrafast Silicon-based Modulators using Optical Switching of Vanadium Dioxide

    Science.gov (United States)

    2014-12-04

    away from the central device, and mounted on an XY positioning stage. Piezo -controled XYZ stages were used to position and couple light to/from...circuit consisting of our device in series with a current limiting resistor of 50Ω (see Fig. 10c inset) [23]. The voltage across this resistor was...across the current limiting resistor when two different 10ns voltage pulses are applied: one below the threshold voltage needed to induce the VO2

  10. Performance Testing of Thermal Cutting Systems for Sweet Pepper Harvesting Robot in Greenhouse Horticulture

    Science.gov (United States)

    Bachche, Shivaji; Oka, Koichi

    2013-03-01

    This paper proposes design of end-effector and prototype of thermal cutting system for harvesting sweet peppers. The design consists of two parallel gripper bars mounted on a frame connected by specially designed notch plate and operated by servo motor. Based on voltage and current, two different types of thermal cutting system prototypes; electric arc and temperature arc respectively were developed and tested for performance. In electric arc, a special electric device was developed to obtain high voltage to perform cutting operation. At higher voltage, electrodes generate thermal arc which helps to cut stem of sweet pepper. In temperature arc, nichrome wire was mounted between two electrodes and current was provided directly to electrodes which results in generation of high temperature arc between two electrodes that help to perform cutting operation. In both prototypes, diameters of basic elements were varied and the effect of this variation on cutting operation was investigated. The temperature arc thermal system was found significantly suitable for cutting operation than electric arc thermal system. In temperature arc thermal cutting system, 0.5 mm nichrome wire shows significant results by accomplishing harvesting operation in 1.5 seconds. Also, thermal cutting system found suitable to increase shelf life of fruits by avoiding virus and fungal transformation during cutting process and sealing the fruit stem. The harvested sweet peppers by thermal cutting system can be preserved at normal room temperature for more than 15 days without any contamination.

  11. Technique for the comparison of light spectra from natural and laboratory generated lightning current arcs

    International Nuclear Information System (INIS)

    Mitchard, D.; Clark, D.; Carr, D.; Haddad, A.

    2016-01-01

    A technique was developed for the comparison of observed emission spectra from lightning current arcs generated through self-breakdown in air and the use of two types of initiation wire, aluminum bronze and nichrome, against previously published spectra of natural lightning events. A spectrograph system was used in which the wavelength of light emitted by the lightning arc was analyzed to derive elemental interactions. A lightning impulse of up to 100 kA was applied to a two hemispherical tungsten electrode configuration which allowed the effect of the lightning current and lightning arc length to be investigated. A natural lightning reference spectrum was reconstructed from literature, and generated lightning spectra were obtained from self-breakdown across a 14.0 mm air gap and triggered along initiation wires of length up to 72.4 mm. A comparison of the spectra showed that the generated lightning arc induced via self-breakdown produced a very similar spectrum to that of natural lightning, with the addition of only a few lines from the tungsten electrodes. A comparison of the results from the aluminum bronze initiation wire showed several more lines, whereas results from the nichrome initiation wire differed greatly across large parts of the spectrum. This work highlights the potential use for spectrographic techniques in the study of lightning interactions with surrounding media and materials, and in natural phenomena such as recently observed ball lightning.

  12. Influence of the heater material on the critical heat load at boiling of liquids on surfaces with different sizes

    Science.gov (United States)

    Anokhina, E. V.

    2010-05-01

    Data on critical heat loads q cr for the saturated and unsaturated pool boiling of water and ethanol under atmospheric pressure are reported. It is found experimentally that the critical heat load does not necessarily coincide with the heat load causing burnout of the heater, which should be taken into account. The absolute values of q cr for the boiling of water and ethanol on copper surfaces 65, 80, 100, 120, and 200 μm in diameter; tungsten surface 100 μm in diameter; and nichrome surface 100 μm in diameter are obtained experimentally.

  13. High Speed Imaging using Nanoprobe Arrays

    Science.gov (United States)

    2010-06-23

    resistance was (2.01 ± 0.04) × 10−3 Ω/Ω · ◦C. When biased at 2 V in a Wheatstone bridge, the deflection sensitivity of the piezo - resistor was (4.25...for both the piezo - resistor and the heater using a low noise preamplifier (SR560, Stanford research systems) and a spectrum analyzer (SR770...noninductive resistors were used for the Wheatstone bridge. III. RESULTS AND DISCUSSION Before operating the cantilever in tapping mode, the can

  14. Increase in operation safety of high-current pulsed accelerators by means of nonlinear resistances

    International Nuclear Information System (INIS)

    Demidov, B.A.; Ivkin, M.V.; Petrov, V.A.; Fanchenko, S.D.

    1975-01-01

    A circuit for connecting a shaping line through a nonlinear resistor in a high-current pulsed accelerator is proposed and investigated experimentally. For experimental purposes standard resistors are used as nonlinear resistors, they are made in the form of cylinders 100 mm in dia and 60 mm long. The results obtained show that if two resistors are connected in series, the reduction in an initial potential is less than 5% at the logarithmic damping coefficient equal to 1.3. It is also shown that such a method allows elimination of the reverse pumpover of energy to the storage device for untimely actuation of a spark gap that results in the prolongation of the time of potential applying thereby it permits a substantial increase in the reliability of a high-voltage insulation [ru

  15. Narrative Finality

    Directory of Open Access Journals (Sweden)

    Armine Kotin Mortimer

    1981-01-01

    Full Text Available The cloturai device of narration as salvation represents the lack of finality in three novels. In De Beauvoir's Tous les hommes sont mortels an immortal character turns his story to account, but the novel makes a mockery of the historical sense by which men define themselves. In the closing pages of Butor's La Modification , the hero plans to write a book to save himself. Through the thrice-considered portrayal of the Paris-Rome relationship, the ending shows the reader how to bring about closure, but this collective critique written by readers will always be a future book. Simon's La Bataille de Pharsale , the most radical attempt to destroy finality, is an infinite text. No new text can be written. This extreme of perversion guarantees bliss (jouissance . If the ending of De Beauvoir's novel transfers the burden of non-final world onto a new victim, Butor's non-finality lies in the deferral to a future writing, while Simon's writer is stuck in a writing loop, in which writing has become its own end and hence can have no end. The deconstructive and tragic form of contemporary novels proclaims the loss of belief in a finality inherent in the written text, to the profit of writing itself.

  16. Final Report

    Energy Technology Data Exchange (ETDEWEB)

    Gurney, Kevin R. [Arizona Univ., Mesa, AZ (United States)

    2015-01-12

    This document constitutes the final report under DOE grant DE-FG-08ER64649. The organization of this document is as follows: first, I will review the original scope of the proposed research. Second, I will present the current draft of a paper nearing submission to Nature Climate Change on the initial results of this funded effort. Finally, I will present the last phase of the research under this grant which has supported a Ph.D. student. To that end, I will present the graduate student’s proposed research, a portion of which is completed and reflected in the paper nearing submission. This final work phase will be completed in the next 12 months. This final workphase will likely result in 1-2 additional publications and we consider the results (as exemplified by the current paper) high quality. The continuing results will acknowledge the funding provided by DOE grant DE-FG-08ER64649.

  17. Transcranial extracellular impedance control (tEIC modulates behavioral performances.

    Directory of Open Access Journals (Sweden)

    Ayumu Matani

    Full Text Available Electric brain stimulations such as transcranial direct current stimulation (tDCS, transcranial random noise stimulation (tRNS, and transcranial alternating current stimulation (tACS electrophysiologically modulate brain activity and as a result sometimes modulate behavioral performances. These stimulations can be viewed from an engineering standpoint as involving an artificial electric source (DC, noise, or AC attached to an impedance branch of a distributed parameter circuit. The distributed parameter circuit is an approximation of the brain and includes electric sources (neurons and impedances (volume conductors. Such a brain model is linear, as is often the case with the electroencephalogram (EEG forward model. Thus, the above-mentioned current stimulations change the current distribution in the brain depending on the locations of the electric sources in the brain. Now, if the attached artificial electric source were to be replaced with a resistor, or even a negative resistor, the resistor would also change the current distribution in the brain. In light of the superposition theorem, which holds for any linear electric circuit, attaching an electric source is different from attaching a resistor; the resistor affects each active electric source in the brain so as to increase (or decrease in some cases of a negative resistor the current flowing out from each source. From an electrophysiological standpoint, the attached resistor can only control the extracellular impedance and never causes forced stimulation; we call this technique transcranial extracellular impedance control (tEIC. We conducted a behavioral experiment to evaluate tEIC and found evidence that it had real-time enhancement and depression effects on EEGs and a real-time facilitation effect on reaction times. Thus, tEIC could be another technique to modulate behavioral performance.

  18. Final Technical Report

    Energy Technology Data Exchange (ETDEWEB)

    Schuur, Edward [Northern Arizona Univ., Flagstaff, AZ (United States); Luo, Yiqi [Univ. of Oklahoma, Norman, OK (United States)

    2016-12-01

    This final grant report is a continuation of the final grant report submitted for DE-SC0006982 as the Principle Investigator (Schuur) relocated from the University of Florida to Northern Arizona University. This report summarizes the original project goals, as well as includes new project activities that were completed in the final period of the project.

  19. 40 CFR 61.134 - Standard: Naphthalene processing, final coolers, and final-cooler cooling towers.

    Science.gov (United States)

    2010-07-01

    ... coolers, and final-cooler cooling towers. 61.134 Section 61.134 Protection of Environment ENVIRONMENTAL... Standard: Naphthalene processing, final coolers, and final-cooler cooling towers. (a) No (“zero”) emissions are allowed from naphthalene processing, final coolers and final-cooler cooling towers at coke by...

  20. Platonic Relationships among Resistors

    Science.gov (United States)

    Allen, Bradley; Liu, Tongtian

    2015-01-01

    Calculating the effective resistance of an electrical network is a common problem in introductory physics courses. Such calculations are typically restricted to two-dimensional networks, though even such networks can become increasingly complex, leading to several studies on their properties. Furthermore, several authors have used advanced…

  1. Electronically Controlled Resistor Bank

    Science.gov (United States)

    Ross, Walter L.

    1987-01-01

    Resistance quickly varied in small steps over wide range. Device with no moving parts provides variable electrical resistance. Used with analog or digital circuity to provide electronic selection of large number of resistance values for testing, simulation, control, or other purposes. Nearest electromechanical equivalent of all-electronic device is potentiometer driven by servomotor.

  2. Cross-Quint-Bridge Resistor

    Science.gov (United States)

    Hannaman, David J.; Lieneweg, Udo; Buehler, Martin G.; Mantalas, Linda

    1991-01-01

    Integrated-circuit conductive test pattern intended to provide data on effects of design widths and design spacings upon actual widths of conductive lines. Provides for electrical measurements both on lines of unknown width and on features having known dimensions. Data from measurements on five bridges used to determine four parameters of mathematical model describing system. In principle, pattern determines effects of width and spacing and interaction between them.

  3. Energy extraction system using dual-capacitor switching for quench protection of HTS magnet

    Energy Technology Data Exchange (ETDEWEB)

    Chi, Yo Jong; Song, Seung Hyun; Jeon, Hae Ryong; Ko, Tae Kuk [Yonsei University, Seoul (Korea, Republic of); Lee, Woo Seung [JH ENGINEERING CO., LTD., Anyang (Korea, Republic of); Kang, Hyoung Ku [Korea National University of Transportation, Chungju (Korea, Republic of)

    2017-09-15

    The superconducting magnets have a large inductance as well as high operating current. Therefore, mega-joule scale energy can be stored in the magnet. The energy stored in the magnet is sufficient to damage the magnet when a quench occurs. Quench heater and dump resistor can be used to protect the magnet. However, using quench heater to create quench resistors through heat transfer can be slower than instantly switching resistors. Also, electrical short, overheating and breakdown can occur due to quench heater. Moreover, the number of dump resistor should be limited to avoid large terminal voltage. Therefore, in this paper, we propose a quench protection method for extracting the energy stored in a magnet by charging and discharging energy through a capacitor switching without increasing resistance. The simulation results show that the proposed system has a faster current decay within the allowable voltage level.

  4. Energy extraction system using dual-capacitor switching for quench protection of HTS magnet

    International Nuclear Information System (INIS)

    Chi, Yo Jong; Song, Seung Hyun; Jeon, Hae Ryong; Ko, Tae Kuk; Lee, Woo Seung; Kang, Hyoung Ku

    2017-01-01

    The superconducting magnets have a large inductance as well as high operating current. Therefore, mega-joule scale energy can be stored in the magnet. The energy stored in the magnet is sufficient to damage the magnet when a quench occurs. Quench heater and dump resistor can be used to protect the magnet. However, using quench heater to create quench resistors through heat transfer can be slower than instantly switching resistors. Also, electrical short, overheating and breakdown can occur due to quench heater. Moreover, the number of dump resistor should be limited to avoid large terminal voltage. Therefore, in this paper, we propose a quench protection method for extracting the energy stored in a magnet by charging and discharging energy through a capacitor switching without increasing resistance. The simulation results show that the proposed system has a faster current decay within the allowable voltage level

  5. Temperature detectors on irradiated silicon base

    International Nuclear Information System (INIS)

    Karimov, M.; Dzhalelov, M.A.; Kurbanov, A.O.

    2005-01-01

    It is well known, that the most suitable for thermal resistors production is compensated silicon with impurities forming deep lying in forbidden zone, having big negative resistance temperature coefficients (RTC). In the capacity of initial materials for thermal resistors with negative RTC the n-type monocrystalline silicon with specific resistance ∼30 Ω·cm at 300 K is applied. Before the irradiation the phosphorus diffusion is realizing at temperature ∼1000 deg. C for 10 min. Irradiation is putting into practise by WWR-SM reactor fast neutrons within the range (7-10)·10 13 cm -2 . The produced resistors have nominal resistance range (8-20)·10 3 Ω·cm, coefficient of the thermal sensitivity B=4000-6000 deg. C., RTC α 300K =4-6.6 %/grad. It is shown, that offered method allows to obtain same type resistors characteristics on the base of neutron-irradiated material

  6. Multiphase soft switched DC/DC converter and active control technique for fuel cell ripple current elimination

    Science.gov (United States)

    Lai, Jih-Sheng; Liu, Changrong; Ridenour, Amy

    2009-04-14

    DC/DC converter has a transformer having primary coils connected to an input side and secondary coils connected to an output side. Each primary coil connects a full-bridge circuit comprising two switches on two legs, the primary coil being connected between the switches on each leg, each full-bridge circuit being connected in parallel wherein each leg is disposed parallel to one another, and the secondary coils connected to a rectifying circuit. An outer loop control circuit that reduces ripple in a voltage reference has a first resistor connected in series with a second resistor connected in series with a first capacitor which are connected in parallel with a second capacitor. An inner loop control circuit that reduces ripple in a current reference has a third resistor connected in series with a fourth resistor connected in series with a third capacitor which are connected in parallel with a fourth capacitor.

  7. SiGe BiCMOS manufacturing platform for mmWave applications

    Science.gov (United States)

    Kar-Roy, Arjun; Howard, David; Preisler, Edward; Racanelli, Marco; Chaudhry, Samir; Blaschke, Volker

    2010-10-01

    TowerJazz offers high volume manufacturable commercial SiGe BiCMOS technology platforms to address the mmWave market. In this paper, first, the SiGe BiCMOS process technology platforms such as SBC18 and SBC13 are described. These manufacturing platforms integrate 200 GHz fT/fMAX SiGe NPN with deep trench isolation into 0.18μm and 0.13μm node CMOS processes along with high density 5.6fF/μm2 stacked MIM capacitors, high value polysilicon resistors, high-Q metal resistors, lateral PNP transistors, and triple well isolation using deep n-well for mixed-signal integration, and, multiple varactors and compact high-Q inductors for RF needs. Second, design enablement tools that maximize performance and lowers costs and time to market such as scalable PSP and HICUM models, statistical and Xsigma models, reliability modeling tools, process control model tools, inductor toolbox and transmission line models are described. Finally, demonstrations in silicon for mmWave applications in the areas of optical networking, mobile broadband, phased array radar, collision avoidance radar and W-band imaging are listed.

  8. Cement Based Batteries and their Potential for Use in Low Power Operations

    Science.gov (United States)

    Byrne, A.; Holmes, N.; Norton, B.

    2015-11-01

    This paper presents the development of an innovative cement-electrolyte battery for low power operations such as cathodic protection of reinforced concrete. A battery design was refined by altering different constituents and examining the open circuit voltage, resistor loaded current and lifespan. The final design consisted of a copper plate cathode, aluminium plate anode, and a cement electrolyte which included additives of carbon black, plasticiser, Alum salt and Epsom salt. A relationship between age, temperature and hydration of the cell and the current it produced was determined. It was found that sealing the battery using varnish increased the moisture retention and current output. Current was also found to increase with internal temperature of the electrolyte and connecting two cells in parallel further doubled or even tripled the current. Parallel-connected cells could sustain an average current of 0.35mA through a 10Ω resistor over two weeks of recording. The preliminary findings demonstrate that cement-based batteries can produce sufficient sustainable electrical outputs with the correct materials and arrangement of components. Work is ongoing to determine how these batteries can be recharged using photovoltaics which will further enhance their sustainability properties.

  9. Non-inductive current probe

    DEFF Research Database (Denmark)

    Bak, Christen Kjeldahl

    1977-01-01

    The current probe described is a low-cost, shunt resistor for monitoring current pulses in e.g., pulsed lasers. Rise time is......The current probe described is a low-cost, shunt resistor for monitoring current pulses in e.g., pulsed lasers. Rise time is...

  10. N Channel JFET Based Digital Logic Gate Structure

    Science.gov (United States)

    Krasowski, Michael J (Inventor)

    2013-01-01

    An apparatus is provided that includes a first field effect transistor with a source tied to zero volts and a drain tied to voltage drain drain (Vdd) through a first resistor. The apparatus also includes a first node configured to tie a second resistor to a third resistor and connect to an input of a gate of the first field effect transistor in order for the first field effect transistor to receive a signal. The apparatus also includes a second field effect transistor configured as a unity gain buffer having a drain tied to Vdd and an uncommitted source.

  11. Rotor Field Oriented Control with adaptive Iron Loss Compensation

    DEFF Research Database (Denmark)

    Rasmussen, Henrik; Vadstrup, P.; Børsting, H.

    1999-01-01

    of the motor referenced to the rotor magnetizing current, and with the extension of an iron loss resistor added in parallel to the magnetizing inductance. The resistor estimator is based on the observation that the actual applied stator voltages deviates from the voltage estimated, when a motor is current......It is well known from the literature that iron loses in an induction motor implies field angle estimation errors and hence detuning problems. In this paper a new method for estimating the iron loss resistor in an induction motor is presented. The method is based on a traditional dynamic model...

  12. New pastes with high gauge factor for piezoresistive pressure sensors

    International Nuclear Information System (INIS)

    Szczepanski, Z.; Kalenik, J.; Gonciara, P.; Jakubowska, M.

    1999-01-01

    The thick film resistors with gauge factor exhibit high reversible changes of resistance under the influence of external load. The piezoresistivity of thick film resistors is utilized in piezoresistive pressure sensors as well as sensors, those allow force detection. The results of studies concerning piezoresistivity in thick film resistors made of pastes elaborated by the authors are presented in this paper. The GF measurement method has been designed and several resistive pastes were tested. The values of gauge factor for these resistive compositions have been evaluated and piezoresistive properties were compared with ESL resistive composition designed for sensor application. (author)

  13. Schedulability Analysis for Java Finalizers

    DEFF Research Database (Denmark)

    Bøgholm, Thomas; Hansen, Rene Rydhof; Søndergaard, Hans

    2010-01-01

    Java finalizers perform clean-up and finalisation of objects at garbage collection time. In real-time Java profiles the use of finalizers is either discouraged (RTSJ, Ravenscar Java) or even disallowed (JSR-302), mainly because of the unpredictability of finalizers and in particular their impact...... on the schedulability analysis. In this paper we show that a controlled scoped memory model results in a structured and predictable execution of finalizers, more reminiscent of C++ destructors than Java finalizers. Furthermore, we incorporate finalizers into a (conservative) schedulability analysis for Predictable Java...... programs. Finally, we extend the SARTS tool for automated schedulability analysis of Java bytecode programs to handle finalizers in a fully automated way....

  14. HDCFC Performance as a Function of Anode Atmosphere (N2-CO2)

    DEFF Research Database (Denmark)

    Deleebeeck, Lisa; Kammer Hansen, Kent

    2014-01-01

    . The majority of the impedance data could be modeled using an equivalent circuit consisting of a resistor (Rs) in series with three resistor-constant phase element units (RQ, in parallel), depending on anode gas atmosphere. An explanation was proposed for each impedance element, and the literature relating...

  15. Use of 1012 ohm current amplifiers in Sr and Nd isotope analyses by TIMS for application to sub-nanogram samples

    NARCIS (Netherlands)

    Koornneef, J.M.; Bouman, C.; Schwieters, J.B.; Davies, G.R.

    2013-01-01

    We have investigated the use of current amplifiers equipped with 10 12 ohm feedback resistors in thermal ionisation mass spectrometry (TIMS) analyses of sub-nanogram sample aliquots for Nd and Sr isotope ratios. The results of analyses using the 1012 ohm resistors were compared to those obtained

  16. DIMEC - Final Report

    DEFF Research Database (Denmark)

    Conrad, Finn

    1997-01-01

    Final report of the research project DIMEC - Danish InfoMechatronic Control supported by the Danish Technical Research Council, STVF.......Final report of the research project DIMEC - Danish InfoMechatronic Control supported by the Danish Technical Research Council, STVF....

  17. Disassembly Properties of Cementitious Finish Joints Using an Induction Heating Method

    Science.gov (United States)

    Ahn, Jaecheol; Noguchi, Takafumi; Kitagaki, Ryoma

    2015-01-01

    Efficient maintenance and upgrading of a building during its lifecycle are difficult because a cementitious finish uses materials and parts with low disassembly properties. Additionally, the reuse and recycling processes during building demolition also present numerous problems from the perspective of environmental technology. In this study, an induction heating (IH) method was used to disassemble cementitious finish joints, which are widely used to join building members and materials. The IH rapidly and selectively heated and weakened these joints. The temperature elevation characteristics of the cementitious joint materials were measured as a function of several resistor types, including wire meshes and punching metals, which are usually used for cementitious finishing. The disassembly properties were evaluated through various tests using conductive resistors in cementitious joints such as mortar. When steel fiber, punching metal, and wire mesh were used as conductive resistors, the cementitious modifiers could be weakened within 30 s. Cementitious joints with conductive resistors also showed complete disassembly with little residual bond strength.

  18. Thermosensitive gas flow sensor

    International Nuclear Information System (INIS)

    Berlicki, T.; Osadnik, S.; Prociow, E.

    1997-01-01

    Results of investigations on thermal gas flow sensor have been presented. The sensor consists of three thin film resistors Si+Ta. The circuit was designed in the form of two bridges; one of them serves for measurement of the heater temperature, the second one for the measurement of temperature difference of peripheral resistors. The measurement of output voltage versus the rate of nitrogen flow at various power levels dissipated at the heater and various temperatures have been made. The measurements were carried out in three versions; (a) at constant temperature of the heater, (b) at constant power dissipated in the heater, controlled by the power of the heater, (c) at constant temperature of the heater controlled by the power dissipated in the peripheral resistors of the sensor. Due to measurement range it is advantageous to stabilize the temperature of the heater, especially by means of the power supplied to the peripheral resistors. In this case the wider measurement range can be obtained. (author)

  19. Two integrator loop quadrature oscillators: A review

    Directory of Open Access Journals (Sweden)

    Ahmed M. Soliman

    2013-01-01

    Full Text Available A review of the two integrator loop oscillator circuits providing two quadrature sinusoidal output voltages is given. All the circuits considered employ the minimum number of capacitors namely two except one circuit which uses three capacitors. The circuits considered are classified to four different classes. The first class includes floating capacitors and floating resistors and the active building blocks realizing these circuits are the Op Amp or the OTRA. The second class employs grounded capacitors and includes floating resistors and the active building blocks realizing these circuits are the DCVC or the unity gain cells or the CFOA. The third class employs grounded capacitors and grounded resistors and the active building blocks realizing these circuits are the CCII. The fourth class employs grounded capacitors and no resistors and the active building blocks realizing these circuits are the TA. Transformation methods showing the generation of different classes from each other is given in details and this is one of the main objectives of this paper.

  20. Final Technical Report

    Energy Technology Data Exchange (ETDEWEB)

    Glasser, Alan H. [Fusion Theory and Computation Inc., Kingston, WA (United States)

    2018-02-02

    Final technical report on DE-SC0016106. This is the final technical report for a portion of the multi-institutional CEMM project. This report is centered around 3 publications and a seminar presentation, which have been submitted to E-Link.

  1. Method and apparatus for neutron radiation monitoring

    International Nuclear Information System (INIS)

    Schwarzmann, A.

    1985-01-01

    A self-calibrated neutron radiation monitor includes a flux responsive element comprised of intrinsic silicon neutron detectors and self-calibration resistors in a single structure. As the resistance of the flux responsive element increases to the value of successive calibration resistors, known increments of flux have been encountered

  2. Determination of packaging induced 3D stress utilizing a piezocoefficient mapping device

    DEFF Research Database (Denmark)

    Richter, Jacob; Hyldgård, A.; Birkelund, Karen

    2007-01-01

    piezoresistor by contacts located near the perimeter of the resistor and do high impedance voltage measurements on contacts located near the centre of the resistor. By measuring the potential drops in these contacts we can determine the stress in the chip. The epoxy is potted in a polystyrene tube using...

  3. Evaluation of a continuous-positive pressure generating system

    Directory of Open Access Journals (Sweden)

    Herrera N

    2016-03-01

    Full Text Available Nestor Herrera,1,2 Roberto Regnícoli,1,2 Mariel Murad1,2 1Neonatology Unit, Italian Hospital Garibaldi, Rosario, Argentina; 2Experimental Medicine and Surgery Unit, Italian University Institute of Rosario, Argentina Abstract: The use of systems that apply continuous-positive airway pressure by means of noninvasive methods is widespread in the neonatal care practice and has been associated with a decrease in the use of invasive mechanical ventilation, less administration of exogenous surfactant, and bronchopulmonary dysplasia. Few experimental studies on the functioning of the neonatology systems that generate continuous-positive airway pressure have been reported. A flow resistor system associated with an underwater seal resistor in a lung test model was described, and it was compared with an underwater seal threshold resistor system. Important differences in the pressures generated in the different systems studied were verified. The generation of pressure was associated with the immersion depth and the diameter of the bubble tubing. The flow resistor associated with an underwater seal, with small bubble tubing, showed no important differences in the evaluated pressures, exerting a stabilizing effect on the generated pressures. The importance of measuring the pressure generated by the different systems studied was verified, due to the differences between the working pressures set and the pressures measured. Keywords: continuous-positive pressure, flow and threshold resistor, BCPAP

  4. Removal of copper from aqueous solution by electrodeposition in cathode chamber of microbial fuel cell.

    Science.gov (United States)

    Tao, Hu-Chun; Liang, Min; Li, Wei; Zhang, Li-Juan; Ni, Jin-Ren; Wu, Wei-Min

    2011-05-15

    Based on energetic analysis, a novel approach for copper electrodeposition via cathodic reduction in microbial fuel cells (MFCs) was proposed for the removal of copper and recovery of copper solids as metal copper and/or Cu(2)O in a cathode with simultaneous electricity generation with organic matter. This was examined by using dual-chamber MFCs (chamber volume, 1L) with different concentrations of CuSO(4) solution (50.3 ± 5.8, 183.3 ± 0.4, 482.4 ± 9.6, 1007.9 ± 52.0 and 6412.5 ± 26.7 mg Cu(2+)/L) as catholyte at pH 4.7, and different resistors (0, 15, 390 and 1000 Ω) as external load. With glucose as a substrate and anaerobic sludge as an inoculum, the maximum power density generated was 339 mW/m(3) at an initial 6412.5 ± 26.7 mg Cu(2+)/L concentration. High Cu(2+) removal efficiency (>99%) and final Cu(2+) concentration below the USA EPA maximum contaminant level (MCL) for drinking water (1.3mg/L) was observed at an initial 196.2 ± 0.4 mg Cu(2+)/L concentration with an external resistor of 15 Ω, or without an external resistor. X-ray diffraction analysis confirmed that Cu(2+) was reduced to cuprous oxide (Cu(2)O) and metal copper (Cu) on the cathodes. Non-reduced brochantite precipitates were observed as major copper precipitates in the MFC with a high initial Cu(2+) concentration (0.1M) but not in the others. The sustainability of high Cu(2+) removal (>96%) by MFC was further examined by fed-batch mode for eight cycles. Copyright © 2011 Elsevier B.V. All rights reserved.

  5. Landauer-Datta-Lundstrom Generalized Transport Model for Nano electronics

    International Nuclear Information System (INIS)

    Kruglyak, Y.

    2014-01-01

    The Landauer-Datta-Lundstrom electron transport model is briefly summarized. If a band structure is given, the number of conduction modes can be evaluated and if a model for a mean-free-path for backscattering can be established, then the near-equilibrium thermoelectric transport coefficients can be calculated using the final expressions listed below for 1D, 2D, and 3D resistors in ballistic, quasi ballistic, and diffusive linear response regimes when there are differences in both voltage and temperature across the device. The final expressions of thermoelectric transport coefficients through the Fermi-Dirac integrals are collected for 1D, 2D, and 3D semiconductors with parabolic band structure and for 2D graphene linear dispersion in ballistic and diffusive regimes with the power law scattering.

  6. The meek cry or the importance of resisting multiple forms

    Directory of Open Access Journals (Sweden)

    Diego Alejandro Muñoz Gaviria

    2011-07-01

    Full Text Available First step, seeks to broadly down some of the known theories of resistance. The idea in this item will be the statement configured stress field around the idea of resistance as a political option. In a second step, seeks to identify the key ideas of Paulo Freire around the resistor, as a Latin American perspective able to shed light on the "other" ways to act politically in our territories, from a critical or resistance. Finally, some conclusions are proposed that will synthesize the above and leave open questions for further reflection exercises and thematic depth.

  7. Dissipation, Voltage Profile and Levy Dragon in a Special Ladder Network

    Science.gov (United States)

    Ucak, C.

    2009-01-01

    A ladder network constructed by an elementary two-terminal network consisting of a parallel resistor-inductor block in series with a parallel resistor-capacitor block sometimes is said to have a non-dispersive dissipative response. This special ladder network is created iteratively by replacing the elementary two-terminal network in place of the…

  8. SU-E-T-258: Development of a New Patient Set-Up Monitoring System Using Force Sensing Resistor (FSR) Sensor for the Radiation Therapy

    International Nuclear Information System (INIS)

    Cho, M; Kim, T; Kang, S; Kim, D; Kim, K; Shin, D; Suh, T

    2015-01-01

    Purpose: The purpose of this work is to develop a new patient set-up monitoring system using force sensing resistor (FSR) sensors that can confirm pressure of contact surface and evaluate its feasibility. Methods: In this study, we focused on develop the patient set-up monitoring system to compensate for the limitation of existing optical based monitoring system, so the developed system can inform motion in the radiation therapy. The set-up monitoring system was designed consisting of sensor units (FSR sensor), signal conditioning devices (USB cable/interface electronics), a control PC, and a developed analysis software. The sensor unit was made by attaching FSR sensor and dispersing pressure sponge to prevent error which is caused by concentrating specific point. Measured signal from the FSR sensor was sampled to arduino mega 2560 microcontroller, transferred to control PC by using serial communication. The measured data went through normalization process. The normalized data was displayed through the developed graphic user interface (GUI) software. The software was designed to display a single sensor unit intensity (maximum 16 sensors) and display 2D pressure distribution (using 16 sensors) according to the purpose. Results: Changes of pressure value according to motion was confirmed by the developed set-up monitoring system. Very small movement such as little physical change in appearance can be confirmed using a single unit and using 2D pressure distribution. Also, the set-up monitoring system can observe in real time. Conclusion: In this study, we developed the new set-up monitoring system using FSR sensor. Especially, we expect that the new set-up monitoring system is suitable for motion monitoring of blind area that is hard to confirm existing optical system and compensate existing optical based monitoring system. As a further study, an integrated system will be constructed through correlation of existing optical monitoring system. This work was supported by

  9. SU-E-T-258: Development of a New Patient Set-Up Monitoring System Using Force Sensing Resistor (FSR) Sensor for the Radiation Therapy

    Energy Technology Data Exchange (ETDEWEB)

    Cho, M; Kim, T; Kang, S; Kim, D; Kim, K; Shin, D; Suh, T [The Catholic University of Korea College of Medicine, Seoul (Korea, Republic of)

    2015-06-15

    Purpose: The purpose of this work is to develop a new patient set-up monitoring system using force sensing resistor (FSR) sensors that can confirm pressure of contact surface and evaluate its feasibility. Methods: In this study, we focused on develop the patient set-up monitoring system to compensate for the limitation of existing optical based monitoring system, so the developed system can inform motion in the radiation therapy. The set-up monitoring system was designed consisting of sensor units (FSR sensor), signal conditioning devices (USB cable/interface electronics), a control PC, and a developed analysis software. The sensor unit was made by attaching FSR sensor and dispersing pressure sponge to prevent error which is caused by concentrating specific point. Measured signal from the FSR sensor was sampled to arduino mega 2560 microcontroller, transferred to control PC by using serial communication. The measured data went through normalization process. The normalized data was displayed through the developed graphic user interface (GUI) software. The software was designed to display a single sensor unit intensity (maximum 16 sensors) and display 2D pressure distribution (using 16 sensors) according to the purpose. Results: Changes of pressure value according to motion was confirmed by the developed set-up monitoring system. Very small movement such as little physical change in appearance can be confirmed using a single unit and using 2D pressure distribution. Also, the set-up monitoring system can observe in real time. Conclusion: In this study, we developed the new set-up monitoring system using FSR sensor. Especially, we expect that the new set-up monitoring system is suitable for motion monitoring of blind area that is hard to confirm existing optical system and compensate existing optical based monitoring system. As a further study, an integrated system will be constructed through correlation of existing optical monitoring system. This work was supported by

  10. EPG waveform library for Graphocephala atropunctata (Hemiptera: Cicadellidae): Effect of adhesive, input resistor, and voltage levels on waveform appearance and stylet probing behaviors.

    Science.gov (United States)

    Cervantes, Felix A; Backus, Elaine A

    2018-05-31

    Blue-green sharpshooter, Graphocephala atropunctata, is a native California vector of Xylella fastidiosa (Xf), a foregut-borne bacterium that is the causal agent of Pierce's disease in grapevines. A 3rd-generation, AC-DC electropenetrograph (EPG monitor) was used to record stylet probing and ingestion behaviors of adult G. atropunctata on healthy grapevines. This study presents for the first time a complete, updated waveform library for this species, as well as effects of different electropenetrograph settings and adhesives on waveform appearances. Both AC and DC applied signals were used with input resistor (Ri) levels (amplifier sensitivities) of 10 6 , 10 7 , 10 8 and 10 9  Ohms, as well as two type of adhesives, conducting silver paint and handmade silver glue. Waveform description, characterization of electrical origins (R versus emf components), and proposed biological meanings of waveforms are reported, as well as qualitative differences in waveform appearances observed with different electropenetrograph settings and adhesives. In addition, a quantitative study with AC signal, using two applied voltage levels (50 and 200 mV) and two Ri levels (10 7 and 10 9  Ohms) was performed. Intermediate Ri levels 10 7 and 10 8  Ohms provided EPG waveforms with the greatest amount of information, because both levels captured similar proportions of R and emf components, as supported by appearance, clarity, and definition of waveforms. Similarly, use of a gold wire loop plus handmade silver glue provided more definition of waveforms than a gold wire loop plus commercial conducting silver paint. Qualitative/observational evidence suggested that AC applied signal caused fewer aberrant behaviors/waveforms than DC applied signal. In the quantitative study, behavioral components of the sharpshooter X wave were the most affected by changes in Ri and voltage level. Because the X wave probably represents X. fastidiosa inoculation behavior, future studies of X. fastidiosa

  11. Power supply connection for ionizing radiation detection probes

    International Nuclear Information System (INIS)

    Zajic, J.

    1990-01-01

    One wire of the supply line is connected, through a diode in the forward direction, to the input terminal of the voltage stabilizer, and through the first resistor to the current limiter terminal of the voltage stabilizer, and also directly to the pulse separator terminal. The current limiter terminal of the voltage stabilizer is connected, through the second resistor, to the output terminal of the voltage stabilizer, and through the first capacitor to the voltage stabilizer earthing terminal, the earthing terminal of the pulse separator and through the other wire of the supply line to the earthing terminal of the detection probe. Furthermore, the input terminal of the voltage stabilizer is connected to a parallel combination of the third resistor with the second capacitor, whose other end is connected to the earthing terminal of the voltage stabilizer. The main asset of this connection consists in the high-frequency matching of the supply line being accomplished by a suitable choice of the resistor value without affecting the voltage for the detection probe. (M.D.)

  12. Development of an on-site calibration method for a current transformer testing system and its application

    International Nuclear Information System (INIS)

    Jung, Jae Kap; Lee, Sang Hwa; Kwon, Sung Won; Park, Young Tae

    2008-01-01

    The ratio error and phase displacement of a current transformer (CT) are measured by using a CT testing system, which consists of a current source, a standard CT, a CT under test, a CT comparator and a CT burden. Methods for on-site calibration of the components in CT testing systems in industry have been developed recently, which do not require any component to be detached from the systems. The method utilizes several travelling transfer standards: standard CTs, non-reactive standard resistors, a calculable wide-ratio error CT and non-reactive shunt resistors. The travelling standard CT is used for absolute evaluation of a current source and a standard CT of industry. The non-reactive standard resistors and the calculable wide-ratio error CT are used to evaluate the linearity of the errors in the CT comparator. The shunt resistors are used to evaluate the CT burden of industry. The on-site calibration method using these travelling transfer standards has been successfully applied to calibration of CT testing systems in industries

  13. Thick film hydrogen sensor

    Science.gov (United States)

    Hoffheins, Barbara S.; Lauf, Robert J.

    1995-01-01

    A thick film hydrogen sensor element includes an essentially inert, electrically-insulating substrate having deposited thereon a thick film metallization forming at least two resistors. The metallization is a sintered composition of Pd and a sinterable binder such as glass frit. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors.

  14. Capacitor charging FET switcher with controller to adjust pulse width

    Science.gov (United States)

    Mihalka, Alex M.

    1986-01-01

    A switching power supply includes an FET full bridge, a controller to drive the FETs, a programmable controller to dynamically control final output current by adjusting pulse width, and a variety of protective systems, including an overcurrent latch for current control. Power MOSFETS are switched at a variable frequency from 20-50 kHz to charge a capacitor load from 0 to 6 kV. A ferrite transformer steps up the DC input. The transformer primary is a full bridge configuration with the FET switches and the secondary is fed into a high voltage full wave rectifier whose output is connected directly to the energy storage capacitor. The peak current is held constant by varying the pulse width using predetermined timing resistors and counting pulses. The pulse width is increased as the capacitor charges to maintain peak current. A digital ripple counter counts pulses, and after the desired number is reached, an up-counter is clocked. The up-counter output is decoded to choose among different resistors used to discharge a timing capacitor, thereby determining the pulse width. A current latch shuts down the supply on overcurrent due to either excessive pulse width causing transformer saturation or a major bridge fault, i.e., FET or transformer failure, or failure of the drive circuitry.

  15. Radiation damage in components

    International Nuclear Information System (INIS)

    Takano, Tomehachi

    1977-01-01

    The performance change of typical capacitors and resistors in electronic components by Co-60 γ-irradiation from the 1320 Ci source was examined in the range of 10 5 to 10 8 R. Specifically, the characteristic change during irradiation and the recovery after irradiation were continuously observed. The capacity change is +2.4% at maximum in ceramic and metallized paper capacitors, and -2.4% at maximum in mylar and paper capacitors. It is also +-0.4% at maximum in mica and polystyrene capacitors. Some of these capacitors showed the recovery of the capacity change, but the others did not. Dielectric loss varied by 15% at larger dose in some capacitors, and the recovery was not observed. While, the insulation resistance of the resistors of 10 15 Ω or more lowered to 10 13 Ω or less after 10 to 30 sec. irradiation, but recovered soon nearly to the initial values after irradiation was interrupted. The resistance change of carbon film resistors is about 0.2 to 2%, and recovered to the initial values in 100 hours after irradiation. The resistance change of composition resistors is large over the range of -13 to +35%, besides, no sign of recovery was seen. In carbon film resistors, the surface insulated type indicated far better results which are assumed to be caused by the selection of element materials and the forming of coating materials. (Wakatsuki, Y.)

  16. TARGET 2 and Settlement Finality

    Directory of Open Access Journals (Sweden)

    Ivan MANGATCHEV

    2011-03-01

    Full Text Available This article examines how TARGET 2 as system implements the idea of settlement finality regulated by Directive 98/26 EC of the European parliament and of the Council of 19 May 1998 on settlement finality in payment and securities settlement systems (Settlement Finality Directive and Directive 2009/44/EC of the European parliament and of the Council of 6 May 2009 amending Directive 98/26/EC on settlement finality in payment and securities settlement systems and Directive 2002/47/EC on financial collateral arrangements as regards linked systems and credit claims (Directive 2009/44/EC. As the title of the arti and finality of the settlement in this system.

  17. Optimization of Nanowire-Resistance Load Logic Inverter.

    Science.gov (United States)

    Hashim, Yasir; Sidek, Othman

    2015-09-01

    This study is the first to demonstrate characteristics optimization of nanowire resistance load inverter. Noise margins and inflection voltage of transfer characteristics are used as limiting factors in this optimization. Results indicate that optimization depends on resistance value. Increasing of load resistor tends to increasing in noise margins until saturation point, increasing load resistor after this point will not improve noise margins significantly.

  18. Design Of Load-klystron Equivalent For Jlc

    CERN Document Server

    Grishanov, B I

    2004-01-01

    In this paper a design of a resistive load - an equivalent of a klystron for the Japan Linear Collider JLC is described. The load should operate in a pulse mode at high voltage and high averege power. Different design variants were considered. The choice in favour of ceramic bulk resistor with longitudinal conductivity was done. A caloric and hydraulic calculation was executed. A mesurements of ceramics thermal conductivity of the bulk resistor and of a single radiator produced warmth remooval were done. Unfortunataly the last events on JLC forbad us to realys the project "in metall". But authours houp that this design experience could be usefull for another accelerating centers. The load can find an application as a absorbing resistor in high voltage schemes.

  19. A Novel Crosstalk Suppression Method of the 2-D Networked Resistive Sensor Array

    Directory of Open Access Journals (Sweden)

    Jianfeng Wu

    2014-07-01

    Full Text Available The 2-D resistive sensor array in the row–column fashion suffered from the crosstalk problem for parasitic parallel paths. Firstly, we proposed an Improved Isolated Drive Feedback Circuit with Compensation (IIDFCC based on the voltage feedback method to suppress the crosstalk. In this method, a compensated resistor was specially used to reduce the crosstalk caused by the column multiplexer resistors and the adjacent row elements. Then, a mathematical equivalent resistance expression of the element being tested (EBT of this circuit was analytically derived and verified by the circuit simulations. The simulation results show that the measurement method can greatly reduce the influence on the EBT caused by parasitic parallel paths for the multiplexers’ channel resistor and the adjacent elements.

  20. Room-temperature antiferromagnetic memory resistor

    Czech Academy of Sciences Publication Activity Database

    Martí, Xavier; Fina, I.; Frontera, C.; Liu, J.; Wadley, P.; He, P.; Paull, R.J.; Clarkson, J.D.; Kudrnovský, Josef; Turek, Ilja; Kuneš, Jan; Yi, D.; Chu, J.-H.; Nelson, C.T.; You, L.; Arenholz, E.; Salahuddin, S.; Fontcuberta, J.; Jungwirth, Tomáš; Ramesh, R.

    2014-01-01

    Roč. 13, č. 4 (2014), s. 367-374 ISSN 1476-1122 R&D Projects: GA MŠk(CZ) LM2011026; GA ČR(CZ) GAP204/11/1228 EU Projects: European Commission(XE) 268066 - 0MSPIN Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Institutional support: RVO:68378271 ; RVO:68081723 Keywords : spintronics * antiferromagnets * memories Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 36.503, year: 2014

  1. Semiconducting oxide gas-sensitive resistors

    International Nuclear Information System (INIS)

    Dusastre, V.J.

    1998-01-01

    The overall aim of this thesis is to describe the gas sensing behaviour of a wide range of metal oxide semiconductors which exhibit tremendous changes in their electrical resistance at high temperatures (typically > 300 deg. C) upon exposure to traces (ppm) of reactive gases present in the air. The effects of surface segregation in antimony-doped tin dioxide (Sn 1-y Sb y O 2 ) on both the electrical response to water vapour and the catalytic combustion of methane in the presence of water vapour were demonstrated. Effects of microstructure, and especially particle size, on the behaviour (sensitivity and selectivity) of these compounds to carbon monoxide and methane were also demonstrated. A change in behaviour correlating with the Debye length was shown. Theoretical calculation methods were used to model surface segregation and surface defects. Antimony segregates as Sb 3+ and the complex (Sn(II).V o ) is a stable surface species. A model for gas response and surface reaction involving this complex is proposed. The properties of solid solution series prepared by systematic cation substitution as a way of understanding the gas response mechanism linked to the surface chemistry has been examined in (CrNbO 4 )x(Sn 1-y Sb y O 2 ) 1-x , Ti x (Sn 1-y Sb y ) 1-x O 2 , and (MWO 4 )x([Sn-Ti]O 2 ) 1x [with M: Mn, Fe, Co, Ni, Cu, Zn]. Effects of stoichiometry, microstructure, combustion gradient and surface segregation on gas (water, carbon monoxide, methane, propane and ammonia) sensitivity and selectivity have been observed and discussed. (author)

  2. Resistor Combinations for Parallel Circuits.

    Science.gov (United States)

    McTernan, James P.

    1978-01-01

    To help simplify both teaching and learning of parallel circuits, a high school electricity/electronics teacher presents and illustrates the use of tables of values for parallel resistive circuits in which total resistances are whole numbers. (MF)

  3. Nonequilibrium fluctuations in a resistor.

    Science.gov (United States)

    Garnier, N; Ciliberto, S

    2005-06-01

    In small systems where relevant energies are comparable to thermal agitation, fluctuations are of the order of average values. In systems in thermodynamical equilibrium, the variance of these fluctuations can be related to the dissipation constant in the system, exploiting the fluctuation-dissipation theorem. In nonequilibrium steady systems, fluctuations theorems (FT) additionally describe symmetry properties of the probability density functions (PDFs) of the fluctuations of injected and dissipated energies. We experimentally probe a model system: an electrical dipole driven out of equilibrium by a small constant current I, and show that FT are experimentally accessible and valid. Furthermore, we stress that FT can be used to measure the dissipated power P = R I2 in the system by just studying the PDFs' symmetries.

  4. Platinum-Resistor Differential Temperature Sensor

    Science.gov (United States)

    Kolbly, R. B.; Britcliffe, M. J.

    1985-01-01

    Platinum resistance elements used in bridge circuit for measuring temperature difference between two flowing liquids. Temperature errors with circuit are less than 0.01 degrees C over range of 100 degrees C.

  5. Farey sequences and resistor networks

    Indian Academy of Sciences (India)

    Green's function, while the perturbation of a network is investigated in [3]. ... In Theorem 1 below, we employ the Farey sequence to establish a strict .... We next show that the Farey sequence method is applicable for circuits with n or fewer.

  6. 75 FR 62133 - Notice of Availability of Final Environmental Assessment (FINAL EA) and a Finding of No...

    Science.gov (United States)

    2010-10-07

    ... Availability of Final Environmental Assessment (FINAL EA) and a Finding of No Significant Impact (FONSI) for... of No Significant Impact (FONSI) for Land Purchase, Access Road Construction and Access Tunnel... Impact (FONSI) based on the Final Environmental Assessment (FINAL EA) for Land Purchase, Access Road...

  7. 14 CFR 1214.1105 - Final ranking.

    Science.gov (United States)

    2010-01-01

    ... 14 Aeronautics and Space 5 2010-01-01 2010-01-01 false Final ranking. 1214.1105 Section 1214.1105... Recruitment and Selection Program § 1214.1105 Final ranking. Final rankings will be based on a combination of... preference will be included in this final ranking in accordance with applicable regulations. ...

  8. Low-cost and versatile thermal test chip for power assemblies assessment and thermometric calibration purposes

    International Nuclear Information System (INIS)

    Jorda, X.; Perpina, X.; Vellvehi, M.; Madrid, F.; Flores, D.; Hidalgo, S.; Millan, J.

    2011-01-01

    Chips specifically designed for thermal tests such as the assessment of packages, are of main interest in Microelectronics. Nevertheless, these test dies are required in relatively low quantities and their price is a limiting factor. This work describes a low-cost thermal test chip, specifically developed for the needs of power electronics. It is based on a poly-silicon heating resistor and a decoupled Pt temperature sensing resistor on the top, allowing to dissipate more than 60 W (170 W/cm 2 ) and reaching temperatures up to 200 o C. Its simple structure allows an easy simulation and modeling. These features have been taken in profit for packaging materials assessment, calibration of temperature measurement apparatus and methods, and validation of thermal models and simulations. - Highlights: → We describe a low-cost thermal test chip developed for power electronics applications. → It integrates a poly-silicon heating resistor and a Pt temperature sensing resistor on the top. → It can dissipate up to 200 W/cm 2 and work up to 200 o C. → It has been used for thermal resistance and conductivity measurement of substrates. → It allowed also the calibration of advanced thermometric equipments.

  9. Hydrogen pellet injection device

    International Nuclear Information System (INIS)

    Kanno, Masahiro.

    1992-01-01

    In a hydrogen pellet injection device, a nozzle block having a hydrogen gas supply channel is disposed at the inner side of a main cryogenic housing, and an electric resistor is attached to the block. Further, a nozzle block and a hydrogen gas introduction pipe are attached by way of a thermal insulating spacer. Electric current is supplied to the resistor to positively heat the nozzle block and melt remaining solid hydrogen in the hydrogen gas supply channel. Further, the effect of temperature elevation due to the resistor is prevented from reaching the side of the hydrogen gas introduction pipe by the thermal insulation spacer. That is, the temperature of the nozzle block is directly and positively elevated, to melt the solid hydrogen rapidly. Preparation operation from the injection of the hydrogen pellet to the next injection can be completed in a shorter period of time compared with a conventional case thereby enabling to make the test more efficient. Further, only the temperature of the nozzle block is elevated with no effect of temperature elevation due to the resistor to other components by the thermal insulation flange. (N.H.)

  10. 78 FR 43912 - Final Candidate Conservation Agreement with Assurances, Final Environmental Assessment, and...

    Science.gov (United States)

    2013-07-22

    ...-FF02ENEH00] Final Candidate Conservation Agreement with Assurances, Final Environmental Assessment, and Finding of No Significant Impact; Rio Grande Cutthroat Trout, New Mexico and Colorado AGENCY: Fish and... environmental assessment (EA) and the draft Finding of No Significant Impact (FONSI) under the National...

  11. Design and implementation of EP-based PID controller for chaos synchronization of Rikitake circuit systems.

    Science.gov (United States)

    Hou, Yi-You

    2017-09-01

    This article addresses an evolutionary programming (EP) algorithm technique-based and proportional-integral-derivative (PID) control methods are established to guarantee synchronization of the master and slave Rikitake chaotic systems. For PID synchronous control, the evolutionary programming (EP) algorithm is used to find the optimal PID controller parameters k p , k i , k d by integrated absolute error (IAE) method for the convergence conditions. In order to verify the system performance, the basic electronic components containing operational amplifiers (OPAs), resistors, and capacitors are used to implement the proposed chaotic Rikitake systems. Finally, the experimental results validate the proposed Rikitake chaotic synchronization approach. Copyright © 2017. Published by Elsevier Ltd.

  12. Analysis of Paralleling Limited Capacity Voltage Sources by Projective Geometry Method

    Directory of Open Access Journals (Sweden)

    Alexandr Penin

    2014-01-01

    Full Text Available The droop current-sharing method for voltage sources of a limited capacity is considered. Influence of equalizing resistors and load resistor is investigated on uniform distribution of relative values of currents when the actual loading corresponds to the capacity of a concrete source. Novel concepts for quantitative representation of operating regimes of sources are entered with use of projective geometry method.

  13. Exact asymptotic expansion for the resistance between the center node and a node on the cobweb network boundary

    Directory of Open Access Journals (Sweden)

    R. Kenna

    2014-09-01

    Full Text Available We analyze the resistance between two nodes in a cobweb network of resistors. Based on an exact expression, we derive the asymptotic expansions for the resistance between the center node and a node on the boundary of the M x N cobweb network with resistors r and s in the two spatial directions. All coefficients in this expansion are expressed through analytical functions.

  14. Device for remote control of monitoring of a conveyor line

    Energy Technology Data Exchange (ETDEWEB)

    Shubin, N F; Rybak, Yu I

    1981-01-01

    The known device under mine conditions because of the decrease of resistance of the insulation of the current-carrying lines of the transfer line does not guarantee reliable protection from false triggering. The purpose of the invention is to improve the reliability of monitoring and control by improving interference-resistance of the device. This goal is achieved because the compensation block is equipped with a transistor, seven diodes, three stabilitrons and resistors united into two compensation circuits which are connected in parallel. The first of them is formed by two stabilitrons connected in series, where the cathode of one of them through a resistor and the counter-connected first diode is connected to a common lead and to the first pole of the block of monitoring and control. The anode of the other through the second counter-connected diode is connected to the second pole of the block of monitoring and control. The second compensation circuit is formed of a transistor, whose collector is connected to the common lead. The emitter is connected through the resistor to the cathode of the third diode whose anode is connected to the lead of the communications line and to the anodes of the fourth diode directly, and the fifth through the resistor, and with the cathode of the third stabilitron whose anode is connected to the transistor base and through the resistor to the common lead. The cathode of the fourth diode is connected to the common point of the first and second stabilitrons through the resistor, connected through the sixth diode, connected by cathode to the cathode of the fourth diode, parallel to the information block. The cathode of the fifth diode is connected to the anode of the second diode, and the second pole of the block of monitoring and control is connected to the communications lead through the seventh diode, connected counter to the fourth and fifth diodes.

  15. 10 CFR 51.93 - Distribution of final environmental impact statement and supplement to final environmental impact...

    Science.gov (United States)

    2010-01-01

    ... 10 Energy 2 2010-01-01 2010-01-01 false Distribution of final environmental impact statement and supplement to final environmental impact statement; news releases. 51.93 Section 51.93 Energy NUCLEAR... Environmental Impact Statements-General Requirements § 51.93 Distribution of final environmental impact...

  16. Electric circuits and signals

    CERN Document Server

    Sabah, Nassir H

    2007-01-01

    Circuit Variables and Elements Overview Learning Objectives Electric Current Voltage Electric Power and Energy Assigned Positive Directions Active and Passive Circuit Elements Voltage and Current Sources The Resistor The Capacitor The Inductor Concluding Remarks Summary of Main Concepts and Results Learning Outcomes Supplementary Topics on CD Problems and Exercises Basic Circuit Connections and Laws Overview Learning Objectives Circuit Terminology Kirchhoff's Laws Voltage Division and Series Connection of Resistors Current Division and Parallel Connection of Resistors D-Y Transformation Source Equivalence and Transformation Reduced-Voltage Supply Summary of Main Concepts and Results Learning Outcomes Supplementary Topics and Examples on CD Problems and Exercises Basic Analysis of Resistive Circuits Overview Learning Objectives Number of Independent Circuit Equations Node-Voltage Analysis Special Considerations in Node-Voltage Analysis Mesh-Current Analysis Special Conside...

  17. Noise Considerations in Resistance Bridges

    DEFF Research Database (Denmark)

    Diamond, Joseph M.

    1963-01-01

    A signal-to-noise analysis is made of the Wheatstone bridge, where the unknown and standard resistors may be at different temperatures, a situation which occurs in resistance thermometry. The limiting condition is assumed to be dissipation in the unknown resistor. It is shown that the ratio arms...... thermometry, where the noise in the unknown resistor will predominate strongly. An impedance step-up device (transformer or tuned circuit) is valuable in raising the bridge signal and noise level above the noise of the first amplifier tube. However, as the step-up ratio is increased, two counterfactors appear....... With certain assumptions about the noise and grid current of the first tube it is found that the equivalent temperature of a unity ratio (Mueller) bridge used for liquid helium measurements may be 400°K....

  18. Suppression of the high-frequency disturbances in low-voltage circuits caused by disconnector operation in high-voltage open-air substations

    Energy Technology Data Exchange (ETDEWEB)

    Savic, M.S.

    1986-07-01

    The switching off and on of small capacitive currents charging busbar capacitances, connection conductors and open circuit breakers with disconnectors causes high-frequency transients in high-voltage networks. In low voltage circuits, these transient processes induce dangerous overvoltages for the electronic equipment in the substation. A modified construction of the disconnector with a damping resistor was investigated. Digital simulation of the transient process in a high-voltage network during the arcing period between the disconnector contacts with and without damping resistor were performed. A significant decrease of the arcing duration and the decrease of the electromagnetic field magnitude in the vicinity of the operating disconnector were noticed. In the low voltage circuit protected with the surge arrester, the overvoltage magnitude was not affected by the damping resistor due to the arrester protection effect.

  19. Final Report

    Energy Technology Data Exchange (ETDEWEB)

    DeTar, Carleton [P.I.

    2012-12-10

    This document constitutes the Final Report for award DE-FC02-06ER41446 as required by the Office of Science. It summarizes accomplishments and provides copies of scientific publications with significant contribution from this award.

  20. Effect of Ni Doping on Gas Sensing Performance of ZnO Thick Film Resistor

    Directory of Open Access Journals (Sweden)

    M. K. DEORE

    2010-11-01

    Full Text Available This work investigates the use of ZnO-NiO as a H2S metal oxide thick film gas sensor. To find the optimum ratio of NiO to ZnO, two compositions were prepared using different molecular percentages and prepared as a thick film paste. These pastes were then screen-printed onto glass substrates with suitable binder. The final composition of each film was determined using SEM analysis. The films were used to detect CO, CL2, ethanol, Amonia and H2S. For each composition tested, the highest responses where displayed for H2S gas. The Thick film having composition of equal molar ZnO and NiO shows the highest response at operating temp. 350 0C for 100 ppm level. The gas response, selectivity, response and recovery time of the sensor were measured and presented. The role played by NiO species is to improve the gas sensing performance is discussed.

  1. Temperature dependence of the beam-foil interaction

    International Nuclear Information System (INIS)

    Gay, T.J.; Berry, H.G.

    1978-01-01

    The beam energy dependence between 50 and 200 keV of the linear polarization fraction (M/I) of the 2s 1 S--3p 1 P, 5016 A transition in He I on temperature was measured. The thin carbon exciter foils were heated externally by nichrome resistance elements. The measurements of Hight et al. are duplicated; the energy and current dependences are the same for corresponding between beam heating and external heating. It was also observed that γ, the number of slow secondary electrons produced per incident ion, decreases with increasing foil temperature. These two effects, in conjunction, offer a plausible explanation for the variation of polarization with beam current density. 5 figures

  2. Effect Of Resistance Modification On EML Capacitor Bank Performance

    Science.gov (United States)

    2009-06-01

    calculated diode action was 13.75 MA2 ·sec with the short and 3.90 MA2 ·sec with the resistor, which is 28.4% of the action in the shorted shot. This...calculated diode action was 28.4 MA2 ·sec with the short and 9.0 MA2 ·sec with the resistor, which is 31.7% of the action in the shorted shot. This series

  3. Design and Analysis of Blast Induced Traumatic Brain Injury Mechanism Using a Surrogate Headform: Instrumentation and Outcomes

    Science.gov (United States)

    2011-05-01

    www.allaboutcircuits.com) 46 [35]. This resistance change is measured using a Wheatstone bridge. A Wheatstone bridge consists of 4 resistors in two circuit...measuring the strains and the precision resistors incorporated in the measuring instrument for completing the circuit. A more symmetrical, balanced... Piezo -Electric” and defines a class of accelerometer with low impedance output and built-in electronics that works on a two-wire constant current

  4. Microstructure-Evolution and Reliability Assessment Tool for Lead-Free Component Insertion in Army Electronics

    Science.gov (United States)

    2008-10-01

    millions of transistors on a silicon chip in addition to many discrete components such as resistors , inductors and capacitors. All these different... resistors [36]. They have defined an Ag3Sn phase growth parameter, S, and have observed that when subjected to periodic thermal loading, the phase growth...moiré interferometry. The process involves moving the whole interferometer parallel to the specimen grating in small increments, using a piezo

  5. Metastable Packaging For Transient Electronics

    Science.gov (United States)

    2014-09-01

    26  Figure 27. Raman Spectra of PPA Thermal Degradation Products, PPA, oPA and Coating ....... 27  List of Tables Table Page... magnesium (Mg) resistors onto the PPA/PAG substrates. Using Mg resistors as a model system, two different PAGs were investigated, triphenylsulfonium...during casting. 3.1.3 Effect of Polymer on Mg Circuit Traces To demonstrate the effect of polymer on the chemical stability of magnesium (Mg) circuits

  6. Modular high voltage power supply for chemical analysis

    Science.gov (United States)

    Stamps, James F [Livermore, CA; Yee, Daniel D [Dublin, CA

    2008-07-15

    A high voltage power supply for use in a system such as a microfluidics system, uses a DC-DC converter in parallel with a voltage-controlled resistor. A feedback circuit provides a control signal for the DC-DC converter and voltage-controlled resistor so as to regulate the output voltage of the high voltage power supply, as well as, to sink or source current from the high voltage supply.

  7. 5 CFR 1216.206 - Final determination.

    Science.gov (United States)

    2010-01-01

    ... 5 Administrative Personnel 3 2010-01-01 2010-01-01 false Final determination. 1216.206 Section... PROCEEDINGS Demands or Requests for Testimony and Production of Documents § 1216.206 Final determination. The General Counsel makes the final determination on demands to requests to employees for production of...

  8. 45 CFR 150.219 - Final determination.

    Science.gov (United States)

    2010-10-01

    ... 45 Public Welfare 1 2010-10-01 2010-10-01 false Final determination. 150.219 Section 150.219... Are Failing To Substantially Enforce HIPAA Requirements § 150.219 Final determination. If, after... the State a written notice of its final determination. The notice includes the following: (a...

  9. Lowcost automated control for steel heat treatments

    International Nuclear Information System (INIS)

    Zambaldi, Edimilson; Magalhães, Ricardo R.; Barbosa, Bruno H.G.; Silva, Sandro P. da; Ferreira, Danton D.

    2017-01-01

    Highlights: • Control the furnace temperature measured by thermocouple and adjusts it. • Activating the furnace resistors through Pulse Width Modulation. • Appling heat treatments to steels by a low-cost controller. - Abstract: The aim of this paper is to propose a low cost, automated furnace control system for the heat treatment of steel. We used an open source electronic prototyping platform to control the furnace temperature, thus reducing human interaction during the heat process. The platform can be adapted to non-controlled commercial furnaces, which are often used by small businesses. A Proportional-Integral-Derivative (PID) controller was implemented to regulate the furnace temperature based on a defined heat treatment cycle. The embedded system activates the furnace resistors through Pulse Width Modulation (PWM), allowing for control of electrical power supplied to the furnace. Hardening and tempering were performed on standard steel samples using a traditional method (visual inspection without temperature control) as well the embedded system with PID feedback control. The results show that the proposed system can reproduce an arbitrary heat treatment curve with accuracy and provide the desired final hardness as inferred through metallographic analysis. In addition, we observed a 6% saving in energy consumption using the proposed control system. Furthermore, the estimated cost to implement the system is 42% lower than a commercial controller model implemented in commercial furnaces.

  10. Implementation of chaotic secure communication systems based on OPA circuits

    International Nuclear Information System (INIS)

    Huang, C.-K.; Tsay, S.-C.; Wu, Y.-R.

    2005-01-01

    In this paper, we proposed a novel three-order autonomous circuit to construct a chaotic circuit with double scroll characteristic. The design idea is to use RLC elements and a nonlinear resistor. The one of salient features of the chaotic circuit is that the circuit with two flexible breakpoints of nonlinear element, and the advantage of the flexible breakpoint is that it increased complexity of the dynamical performance. Here, if we take a large and suitable breakpoint value, then the chaotic state can masking a large input signal in the circuit. Furthermore, we proposed a secure communication hyperchaotic system based on the proposed chaotic circuits, where the chaotic communication system is constituted by a chaotic transmitter and a chaotic receiver. To achieve the synchronization between the transmitter and the receiver, we are using a suitable Lyapunov function and Lyapunov theorem to design the feedback control gain. Thus, the transmitting message masked by chaotic state in the transmitter can be guaranteed to perfectly recover in the receiver. To achieve the systems performance, some basic components containing OPA, resistor and capacitor elements are used to implement the proposed communication scheme. From the viewpoints of circuit implementation, this proposed chaotic circuit is superior to the Chua chaotic circuits. Finally, the test results containing simulation and the circuit measurement are shown to demonstrate that the proposed method is correct and feasible

  11. 78 FR 69817 - Polyethylene Retail Carrier Bags From Thailand: Final Court Decision and Amended Final Results of...

    Science.gov (United States)

    2013-11-21

    ... Bags From Thailand: Final Court Decision and Amended Final Results of Administrative Review of the..., which recalculated the weighted-average duty margin for polyethylene retail carrier bags (PRCBs) from... Packaging at the CIT. \\2\\ See Polyethylene Retail Carrier Bags from Thailand: Final Results and Partial...

  12. Programmable System-on-Chip (PSoC) Embedded Readout Designs for Liquid Helium Level Sensors.

    Science.gov (United States)

    Parasakthi, C; Gireesan, K; Usha Rani, R; Sheela, O K; Janawadkar, M P

    2014-08-01

    This article reports the development of programmable system-on-chip (PSoC)-based embedded readout designs for liquid helium level sensors using resistive liquid vapor discriminators. The system has been built for the measurement of liquid helium level in a concave-bottomed, helmet-shaped, fiber-reinforced plastic cryostat for magnetoencephalography. This design incorporates three carbon resistors as cost-effective sensors, which are mounted at desired heights inside the cryostat and were used to infer the liquid helium level by measuring their temperature-dependent resistance. Localized electrical heating of the carbon resistors was used to discriminate whether the resistor is immersed in liquid helium or its vapor by exploiting the difference in the heat transfer rates in the two environments. This report describes a single PSoC chip for the design and development of a constant current source to drive the three carbon resistors, a multiplexer to route the sensor outputs to the analog-to-digital converter (ADC), a buffer to avoid loading of the sensors, an ADC for digitizing the data, and a display using liquid crystal display cum light-emitting diode modules. The level sensor readout designed with a single PSoC chip enables cost-effective and reliable measurement system design. © 2014 Society for Laboratory Automation and Screening.

  13. Final Report

    DEFF Research Database (Denmark)

    Heiselberg, Per; Brohus, Henrik; Nielsen, Peter V.

    This final report for the Hybrid Ventilation Centre at Aalborg University describes the activities and research achievement in the project period from August 2001 to August 2006. The report summarises the work performed and the results achieved with reference to articles and reports published...

  14. 11 CFR 9409.9 - Final determination.

    Science.gov (United States)

    2010-01-01

    ... 11 Federal Elections 1 2010-01-01 2010-01-01 false Final determination. 9409.9 Section 9409.9... INFORMATION AND PRODUCTION OF OFFICIAL RECORDS IN LEGAL PROCEEDINGS § 9409.9 Final determination. The General Counsel will make the final determination on demands and requests to employees for production of official...

  15. 48 CFR 32.605 - Final decisions.

    Science.gov (United States)

    2010-10-01

    ... REQUIREMENTS CONTRACT FINANCING Contract Debts 32.605 Final decisions. (a) The contracting officer shall issue a final decision as required by 33.211 if— (1) The contracting officer and the contractor are unable... 48 Federal Acquisition Regulations System 1 2010-10-01 2010-10-01 false Final decisions. 32.605...

  16. Logarithmic circuit with wide dynamic range

    Science.gov (United States)

    Wiley, P. H.; Manus, E. A. (Inventor)

    1978-01-01

    A circuit deriving an output voltage that is proportional to the logarithm of a dc input voltage susceptible to wide variations in amplitude includes a constant current source which forward biases a diode so that the diode operates in the exponential portion of its voltage versus current characteristic, above its saturation current. The constant current source includes first and second, cascaded feedback, dc operational amplifiers connected in negative feedback circuit. An input terminal of the first amplifier is responsive to the input voltage. A circuit shunting the first amplifier output terminal includes a resistor in series with the diode. The voltage across the resistor is sensed at the input of the second dc operational feedback amplifier. The current flowing through the resistor is proportional to the input voltage over the wide range of variations in amplitude of the input voltage.

  17. Development of an Algorithm for Automatic Analysis of the Impedance Spectrum Based on a Measurement Model

    Science.gov (United States)

    Kobayashi, Kiyoshi; Suzuki, Tohru S.

    2018-03-01

    A new algorithm for the automatic estimation of an equivalent circuit and the subsequent parameter optimization is developed by combining the data-mining concept and complex least-squares method. In this algorithm, the program generates an initial equivalent-circuit model based on the sampling data and then attempts to optimize the parameters. The basic hypothesis is that the measured impedance spectrum can be reproduced by the sum of the partial-impedance spectra presented by the resistor, inductor, resistor connected in parallel to a capacitor, and resistor connected in parallel to an inductor. The adequacy of the model is determined by using a simple artificial-intelligence function, which is applied to the output function of the Levenberg-Marquardt module. From the iteration of model modifications, the program finds an adequate equivalent-circuit model without any user input to the equivalent-circuit model.

  18. Fabrication Effects on Polysilicon-based Micro cantilever Piezo resistivity for Biological Sensing Application

    International Nuclear Information System (INIS)

    Nina Korlina Madzhi; Balkish Natra; Mastura Sidek; Khuan, L.Y.; Anuar Ahmad

    2011-01-01

    In principle, adsorption of biological molecules on a functionalized surface of a micro fabricated cantilever will cause a surface stress and consequently the cantilever bending. In this work, four different type of polysilicon-based piezo resistive micro cantilever sensors were designed to increase the sensitivity of the micro cantilevers sensor because the forces involved is very small. The design and optimization was performed by using finite element analysis to maximize the relative resistance changes of the piezo resistors as a function of the cantilever vertical displacements. The resistivity of the piezo resistivity micro cantilevers was analyzed before and after dicing process. The maximum resistance changes were systematically investigated by varying the piezo resistor length. The results show that although the thickness of piezo resistor was the same at 0.5 μm the resistance value was varied. (author)

  19. Reduction of characteristic RL time for fast, efficient magnetic levitation

    Directory of Open Access Journals (Sweden)

    Yuqing Li

    2017-09-01

    Full Text Available We demonstrate the reduction of characteristic time in resistor-inductor (RL circuit for fast, efficient magnetic levitation according to Kirchhoff’s circuit laws. The loading time is reduced by a factor of ∼4 when a high-power resistor is added in series with the coils. By using the controllable output voltage of power supply and voltage of feedback circuit, the loading time is further reduced by ∼ 3 times. The overshoot loading in advance of the scheduled magnetic field gradient is equivalent to continuously adding a resistor without heating. The magnetic field gradient with the reduced loading time is used to form the upward magnetic force against to the gravity of the cooled Cs atoms, and we obtain an effectively levitated loading of the Cs atoms to a crossed optical dipole trap.

  20. Comparative analysis of the selective resonant LCL and LCL plus trap filters

    DEFF Research Database (Denmark)

    Beres, Remus Narcis; Wang, Xiongfei; Blaabjerg, Frede

    2014-01-01

    In this paper two promising LCL based filter topologies are evaluated against the well-known LCL with a damping resistor. The filters are designed for high power applications where the frequency modulation index is relatively low. The first topology is the selective resonant LCL filter which aim...... is to minimize the damping losses by bypassing the resistor at the fundamental and switching frequencies while preserving high attenuation at higher frequencies. A new design procedure is proposed for the selective resonant LCL filter. The presence of multi-tuned traps in the second topology aims to decrease...... the total size of the filter reactive elements while meeting current harmonic standards. It is found that selective resonant LCL filter provide much lower damping losses compared to the LCL filter with simple resistor topology. Additionally, for the trap topology a minimum switching frequency is determined...

  1. 75 FR 50930 - Final Determination To Approve Alternative Final Cover Request for the Lake County, Montana Landfill

    Science.gov (United States)

    2010-08-18

    ... Determination To Approve Alternative Final Cover Request for the Lake County, Montana Landfill AGENCY... VIII is making a final determination to approve an alternative final cover for the Lake County landfill, a municipal solid waste landfill (MSWLF) owned and operated by Lake County, Montana on the...

  2. 32 CFR 536.64 - Final offers.

    Science.gov (United States)

    2010-07-01

    ... 32 National Defense 3 2010-07-01 2010-07-01 true Final offers. 536.64 Section 536.64 National... UNITED STATES Investigation and Processing of Claims § 536.64 Final offers. (a) When claims personnel... less than the amount claimed, a settlement authority will make a written final offer within his or her...

  3. Flow through collapsible tubes at low Reynolds numbers. Applicability of the waterfall model.

    Science.gov (United States)

    Lyon, C K; Scott, J B; Wang, C Y

    1980-07-01

    The applicability of the waterfall model was tested using the Starling resistor and different viscosities of fluids to vary the Reynolds number. The waterfall model proved adequate to describe flow in the Starling resistor model only at very low Reynolds numbers (Reynolds number less than 1). Blood flow characterized by such low Reynolds numbers occurs only in the microvasculature. Thus, it is inappropriate to apply the waterfall model indiscriminately to flow through large collapsible veins.

  4. A novel CMOS SRAM feedback element for SEU environments

    International Nuclear Information System (INIS)

    Verghese, S.; Wortman, J.J.; Kerns, S.E.

    1987-01-01

    A hardened CMOS SRAM has been proposed which utilizes a leaky polysilicon Schottky diode placed in the feedback path to attain the SEU immunity of resistor-coupled SRAMs while improving the access speed of the cell. Novel polysilicon hybrid Schottky-resistor structures which emulate the leaky diodes have been designed and fabricated. The elements' design criteria and methods of fulfilling them are presented along with a practical implementation scheme for CMOS SRAM cells

  5. Definitions of Frequency and Timing Terms, Satellite Navigation and Timing Systems, and the Behavior and Analyses of Precision Crystal and Atomic Frequency Standards and their Characteristics

    Science.gov (United States)

    2009-05-01

    expected value of a measurement or property when operating in a normal expected environment. For example, the nominal value of a 51 ohm, 20% resistor ...operating at room temperature is 51 ohms. However, the actual resistance of any single 51 ohm, 20% resistor may be any value between 46 and 56...NIST Technical Note 1337, March 1990. 6. Piezo Crystal Company, (September 1990). Frequency Sources That Set the Standard. RCC Document 214-09

  6. Study of the Synchronous Operation of an Annular Field Reversed Configuration Plasma Device

    Science.gov (United States)

    2008-05-05

    ondly, a gravity dump switch automatically (in the case of power failure) discharges the capacitors across a 5-kJ, 14 Ω electrolytic resistor network [2...bank discharge 31 Fiber Optic Trigger Module Main Discharge Coils Ignitron Electrolytic Dump Resistors Capacitor Bank Charging Supply Isolated DC...Additionally, the flange connects to a MKS Series 910 Dual Trans combination Micro Pirani/ Piezo Pressure Transducer that is accurate from 10−5 to 103 Torr

  7. Comparison of Electrostatic Fins with Piezoelectric Impact Hammer Techniques to Extend Impulse Calibration Range of a Torsional Thrust Stand (Preprint)

    Science.gov (United States)

    2011-03-23

    prac- tical max impulse to 1mNs. The newly developed Piezo - electric Impact Hammer (PIH) calibration system over- comes geometric limits of ESC...the fins to behave as part of an LRC circuit which results in voltage oscillations. By adding a resistor in series between the pulse generator and...series resistor as well as the effects of no loading on the pulse generator. III. PIEZOELECTRIC IMPACT HAMMER SYSTEM The second calibration method tested

  8. dc illusion and its experimental verification

    Science.gov (United States)

    Liu, Min; Lei Mei, Zhong; Ma, Xiang; Cui, Tie Jun

    2012-07-01

    Based on the transformation optics method, we propose a dc illusion device, which can transform a metallic object into a magnified dielectric object using anisotropic conducting materials. Utilizing the analogy between electric conductivities and resistor networks, we design and fabricate the device using metal film resistors. The practical measurement data agree very well with simulation results. The proposed dc illusion device is easy to process and measure, and thus has potential applications in various sectors.

  9. Deep inelastic final states

    International Nuclear Information System (INIS)

    Girardi, G.

    1980-11-01

    In these lectures we attempt to describe the final states of deep inelastic scattering as given by QCD. In the first section we shall briefly comment on the parton model and give the main properties of decay functions which are of interest for the study of semi-inclusive leptoproduction. The second section is devoted to the QCD approach to single hadron leptoproduction. First we recall basic facts on QCD log's and derive after that the evolution equations for the fragmentation functions. For this purpose we make a short detour in e + e - annihilation. The rest of the section is a study of the factorization of long distance effects associated with the initial and final states. We then show how when one includes next to leading QCD corrections one induces factorization breaking and describe the double moments useful for testing such effects. The next section contains a review on the QCD jets in the hadronic final state. We begin by introducing the notion of infrared safe variable and defining a few useful examples. Distributions in these variables are studied to first order in QCD, with some comments on the resummation of logs encountered in higher orders. Finally the last section is a 'gaullimaufry' of jet studies

  10. 36 CFR 908.33 - Final determination.

    Science.gov (United States)

    2010-07-01

    ... 36 Parks, Forests, and Public Property 3 2010-07-01 2010-07-01 false Final determination. 908.33... DEVELOPMENT AREA Review Procedure § 908.33 Final determination. (a) The Chairman or designee(s) shall make a final determination on the claim within 45 days of receipt of the file from the Director of Real Estate...

  11. Data breaches. Final rule.

    Science.gov (United States)

    2008-04-11

    This document adopts, without change, the interim final rule that was published in the Federal Register on June 22, 2007, addressing data breaches of sensitive personal information that is processed or maintained by the Department of Veterans Affairs (VA). This final rule implements certain provisions of the Veterans Benefits, Health Care, and Information Technology Act of 2006. The regulations prescribe the mechanisms for taking action in response to a data breach of sensitive personal information.

  12. Final focus system for TLC

    International Nuclear Information System (INIS)

    Oide, K.

    1988-11-01

    A limit of the chromaticity correction for the final focus system of a TeV Linear Collider (TLC) is investigated. As the result, it becomes possible to increase the aperture of the final doublet with a small increase of the horizontal β function. The new optics design uses a final doublet of 0.5 mm half-aperture and 1.4 T pole-tip field. The length of the system is reduced from 400 m to 200 m by several optics changes. Tolerances for various machine errors with this optics are also studied. 5 refs., 7 figs., 2 tabs

  13. Cassini's Grand Finale Overview

    Science.gov (United States)

    Spilker, L. J.

    2017-12-01

    After 13 years in orbit, the Cassini-Huygens Mission to Saturn ended in a science-rich blaze of glory. Cassini sent back its final bits of unique science data on September 15, 2017, as it plunged into Saturn's atmosphere, vaporizing and satisfying planetary protection requirements. Cassini's final phase covered roughly ten months and ended with the first time exploration of the region between the rings and planet. In late 2016 Cassini transitioned to a series of 20 Ring Grazing orbits with peripases just outside Saturn's F ring, providing close flybys of tiny ring moons, including Pan, Daphnis and Atlas, and high-resolution views of Saturn's A and F rings. A final Titan flyby in late April 2017 propelled Cassini across Saturn's main rings and into its Grand Finale orbits. Comprised of 22 orbits, Cassini repeatedly dove between Saturn's innermost rings and upper atmosphere to answer fundamental questions unattainable earlier in the mission. The last orbit turned the spacecraft into the first Saturn atmosphere probe. The Grand Finale orbits provided highest resolution observations of both the rings and Saturn, and in-situ sampling of the ring particle composition, Saturn's atmosphere, plasma, and innermost radiation belts. The gravitational field was measured to unprecedented accuracy, providing information on the interior structure of the planet, winds in the deeper atmosphere, and mass of the rings. The magnetic field provided insight into the physical nature of the magnetic dynamo and structure of the internal magnetic field. The ion and neutral mass spectrometer sampled the upper atmosphere for molecules that escape the atmosphere in addition to molecules originating from the rings. The cosmic dust analyzer directly sampled the composition from different parts of the main rings for the first time. Fields and particles instruments directly measured the plasma environment between the rings and planet. Science highlights and new mysteries collected in the Grand

  14. Performance of new generation pole light

    International Nuclear Information System (INIS)

    Foo, K C; Karunanithi, S; Thio, G

    2013-01-01

    This paper describes the design and implementation of a standalone photovoltaic power supply which caters for garden lighting scheme. New Generation Pole Light (NGPL) consists of three parts which are light dependent resistor (LDR) and pyroelectric infrared (PIR) sensors, microcontroller and light emitting diode (LED) and finally, solar charging system. During the night, LED is switched on with two operating modes which are ultra-bright lighting for a predetermine period (when human presence is detected) and dim lighting. Meanwhile, LED is switched off at day time and solar charging system will recover the capacity of discharged battery. NGPL provides portable, sustainable, environmental friendly and requires minimal maintenance for outdoor lighting scheme for both urban and rural areas.

  15. 77 FR 14416 - Notice of Availability of a Final Environmental Impact Statement and Final Environmental Impact...

    Science.gov (United States)

    2012-03-09

    ...In accordance with the National Environmental Policy Act of 1969, as amended (NEPA), and the Federal Land Policy and Management Act of 1976, as amended (FLPMA), the Bureau of Land Management (BLM) has prepared a Proposed California Desert Conservation Area (CDCA) Plan Amendment (PA)/Final Environmental Impact Statement (EIS) and Final Environmental Impact Report (EIR) for the Ocotillo Express Wind Energy Facility (OWEF) and by this notice is announcing the availability of the Proposed PA and Final EIS/EIR.

  16. A 1.7 MHz Chua's circuit using VMs and CF+s

    OpenAIRE

    Sánchez López, C

    2012-01-01

    In this paper, a high-frequency Chua's chaotic oscillator based on unity gain cells (UGCs) is introduced. Leveraging the internal buffers of the integrated circuit AD844, a voltage mirror (VM) and a positive current follower (CF+) are designed, taking into account the parasitic elements associated to each UGC. Afterwards, the behavior of the nonlinear resistor and of the grounded inductor are designed by using several VMs, CF+s, discrete capacitors and resistors. In this way, Chua's circuit i...

  17. Manned Certification Tests of the Modernized MK 16 MOD 1

    Science.gov (United States)

    2013-11-01

    three oxygen sensors in the breathing loop and add oxygen via a piezo -electric valve if oxygen partial pressure (PO2) drops below a designated...approved for use in the MK 16 requires that a 6 kΩ resistor be present (no tolerance given) for best 5 function of the sensor’s temperature...external 6.0 kΩ resistor was then inserted between the voltage source and the sensor connector and the secondary reading was noted. RESULTS A

  18. The P3 Power Generation System for Advanced Missile Defense Applications

    Science.gov (United States)

    2008-11-01

    circuit. This increased the output power to the load resistor . The inductor couples with the piezo element to form an electrical LC tuned circuit and...of RMS power was generated with an efficiency of 40 % when an inductor of 250 mH was connected in series to a 100 ohm resistor . From power density...per cycle for generating electrical energy in a piezo -crystal membrane. Steady-state heat transfer measurements have been made previously with a

  19. An electronically tunable current-mode quadrature oscillator using PCAs

    OpenAIRE

    Herencsár, Norbert; Lahiri, Abhirup; Vrba, Kamil; Koton, Jaroslav

    2012-01-01

    The paper presents a new realization of active RC sinusoidal oscillator with electronically tunable condition and frequency of oscillation. As compared to the class of three resistors, two capacitors (3R-2C) based canonic oscillators, the proposed circuit here uses only two resistors and two capacitors as the passive components and still provides non-interactive tuning laws for the condition of oscillation (CO) and the frequency of oscillation (FO). The proposed circuit employs new bipolar pr...

  20. Analisis Pengaturan Putaran Motor Satu Fasa dengan Parameter Frekuensi Menggunakan Power Simulator (PSIM)

    OpenAIRE

    Rasjid, Dwi Hadidjaja

    2015-01-01

    -The Setting of a single-phase motor rotation can be performed in various ways, such as by adjusting the frequency of the motor, the voltage, motor resistor or increasing the number of motor poles.By using astable oscillator circuit, setting a single-phase motor rotation frequency parameters can be done by setting the value variabel resistor. Thyristor trigger circuit can be used to control a single-phase motor rotation. Thyristor trigger phase angle changes, caused changes in the frequency, ...

  1. A Cost-Effective 10-Bit D/A Converter for Digital-Input MOEMS Micromirror Actuation

    Directory of Open Access Journals (Sweden)

    Sergio Saponara

    2010-01-01

    Full Text Available The design of a 10-bit resistor-string digital-to-analog converter (DAC for MOEMS micromirror interfacing is addressed in this paper. The proposed DAC, realized in a 0.18-μm BCD technology, features a folded resistor-string stage with a switch matrix and address decoders plus an output voltage buffer stage. The proposed DAC and buffer circuitry are key elements of an innovative scanning micromirror actuator, characterized by direct digital input, full differential driving, and linear response. With respect to the the state-of-the-art resistor-string converters in similar technologies, the proposed DAC has comparable nonlinearity (INL, DNL performances while it has the advantage of a smaller area occupation, 0.17 mm2, including output buffer, and relatively low-power consumption, 200 μW at 500 kSPS and few μW in idle mode.

  2. Evaluation of Ferrite Chip Beads as Surge Current Limiters in Circuits with Tantalum Capacitors

    Science.gov (United States)

    Teverovsky, Alexander

    2014-01-01

    Limiting resistors are currently required to be connected in series with tantalum capacitors to reduce the risk of surge current failures. However, application of limiting resistors decreases substantially the efficiency of the power supply systems. An ideal surge current limiting device should have a negligible resistance for DC currents and high resistance at frequencies corresponding to transients in tantalum capacitors. This work evaluates the possibility of using chip ferrite beads (FB) as such devices. Twelve types of small size FBs from three manufacturers were used to evaluate their robustness under soldering stresses and at high surge current spikes associated with transients in tantalum capacitors. Results show that FBs are capable to withstand current pulses that are substantially greater than the specified current limits. However, due to a sharp decrease of impedance with current, FBs do not reduce surge currents to the required level that can be achieved with regular resistors.

  3. Structure and properties of joints of two-ply steel using ''elastic'' explosives

    International Nuclear Information System (INIS)

    Gel'man, A.S.; Savel'ev, S.A.; Kulakevich, Ya.S.; Sharypov, N.A.; Drogovejko, I.Z.; Domolego, I.E.

    1980-01-01

    Some experimental data on structure and properties of compounds during cladding of sheets made of St3 with sheets of nichrome and steel 12Kh18N10T with the use of ''elastic'' explosives are presented. It is shown that the use of ''elastic'' explosives permits to decrease r parameter sufficiently, (where r - is the ratio of explosive mass to the mass of throwen phate) that reduces considerably the specific consumption explosives in comparison with the consumption conventional mixture explosives. Peculiarities of tested ''elastic'' explosives make their application perspective in two cases - at cladding of complex curved surfaces (drums, tube blanks etc.), as sell as at applications of burst chambers, where explosive mass limits dimensions of cladding blanks and details [ru

  4. Effect of substrate temperature in the structural, optical and ferroelectric properties of thin films of BaTiO{sub 3} deposited by RF sputtering; Efecto de la temperatura de substrato en las propiedades estructurales, opticas y ferroelectricas de peliculas delgadas de BaTiO{sub 3} depositadas por RF sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Marquez H, A. [Universidad Autonoma de San Luis Potosi, Coordinacion Academica Region Altiplano, Carretera a Cedral Km. 5 -600, Matehuala, 78800 San Luis Potosi (Mexico); Hernandez R, E.; Zapata T, M. [IPN, Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada, Unidad Legaria, Calz. Legaria 694, Col. Irrigacion, 11500 Mexico D. F. (Mexico); Calzadilla A, O. [Universidad de la Habana, Facultad de Fisica-IMRE, San Lazaro y L. Municipio Plaza de la Revolucion, La Habana (Cuba); Melendez L, M. [IPN, Centro de Investigacion y de Estudios Avanzados, Departamento de Fisica, Apdo. Postal 14-740, 07000 Mexico D. F. (Mexico)

    2012-07-01

    Thin films of Barium Titanate (BaTiO{sub 3}) were grown on nichrome and quartz substrates, using a BaTiO{sub 3} target, by RF sputtering technique. We varied the substrate temperature in order to study its effect on the structural, optical and ferroelectric properties of the samples. The results of the X-ray diffraction showed tetragonal structure with increases of the crystallinity as increases the substrate temperature. Furthermore, it observed by ultraviolet-visible spectroscopy that the band gap decreased as the substrate temperature increases showing abrupt sharp decrease at 494.8{sup o} C. The ferroelectric properties of the films showed a dependence with substrate temperature, the best ferroelectric answer was obtained at 494.8{sup o} C. (Author)

  5. Final Focus Systems in Linear Colliders

    International Nuclear Information System (INIS)

    Raubenheimer, Tor

    1998-01-01

    In colliding beam facilities, the ''final focus system'' must demagnify the beams to attain the very small spot sizes required at the interaction points. The first final focus system with local chromatic correction was developed for the Stanford Linear Collider where very large demagnifications were desired. This same conceptual design has been adopted by all the future linear collider designs as well as the SuperConducting Supercollider, the Stanford and KEK B-Factories, and the proposed Muon Collider. In this paper, the over-all layout, physics constraints, and optimization techniques relevant to the design of final focus systems for high-energy electron-positron linear colliders are reviewed. Finally, advanced concepts to avoid some of the limitations of these systems are discussed

  6. Computer simulation of current percolation in polycrystalline high-temperature superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Zeimetz, B [Department of Materials Science and Interdisciplinary Research Centre in Superconductivity, Cambridge University, Pembroke Street, Cambridge (United Kingdom); Rutter, N A; Glowacki, B A; Evetts, J E [Department of Materials Science and Interdisciplinary Research Centre in Superconductivity, Cambridge University, Pembroke Street, Cambridge (United Kingdom)

    2001-09-01

    YBCO-coated conductors were modelled in a computer simulation using a resistor network concept, with the resistors representing the grain boundaries. Dissipation above the critical current, accompanied by flux penetration into the grain boundaries, was described by a linear (flux-flow) resistivity. The model allowed calculation of the combined percolation of current and magnetic flux. Current-voltage data showed scaling in agreement with percolation theory for two-dimensional systems. The influence of grain alignment and electromagnetic parameters on conductor performance was investigated. (author)

  7. A Simple Square Rooting Circuit Based on Operational Amplifiers (OPAMPs

    Directory of Open Access Journals (Sweden)

    K. C. Selvam

    2013-02-01

    Full Text Available A simple circuit which accepts a negative voltage as input and provides an output voltage equal to the square root of the input voltage is described in this paper. The square rooting operation is dependent only on the ratio of two resistors and a DC voltage. Hence, the required accuracy can be obtained by employing precision resistors and a stable reference voltage. The feasibility of the circuit is examined by testing the results on a proto type.

  8. Piezoelectric, Solar and Thermal Energy Harvesting for Hybrid Low-Power Generator Systems With Thin-Film Batteries

    Science.gov (United States)

    2012-01-01

    are approximately 93 mm × 25 mm × 1.5 mm (while the region with the battery layers has slightly different thickness as compared to that with the piezo ...temperature difference between the sink and the ambient for the maximum power transfer). Having chosen the heat sink, resistor sweep measurements are...of resistors in each curve). range from 5.0 to 40.7 ◦C. The term average is used for the T values because the temperature difference across the

  9. Transition Delay in a Hypervelocity Boundary Layer using Nonequilibrium CO2 Injection

    Science.gov (United States)

    2008-10-28

    which is more than the voltage necessary to trigger the timing circuit. A large (1MΩ) resistor , R3, was placed to draw down the voltage once the...pulse ended, otherwise the op amp would continue to output the amplified TTL pulse until the power supply was switched off. This resistor can be seen in...Data files from the new DAS are transferred to the GALCIT server and copied to this folder. Two PCB piezo -electric pressure transducers mounted at

  10. Expanded studies of linear collider final focus systems at the Final Focus Test Beam

    International Nuclear Information System (INIS)

    Tenenbaum, P.G.

    1995-12-01

    In order to meet their luminosity goals, linear colliders operating in the center-of-mass energy range from 3,50 to 1,500 GeV will need to deliver beams which are as small as a few Manometers tall, with x:y aspect ratios as large as 100. The Final Focus Test Beam (FFTB) is a prototype for the final focus demanded by these colliders: its purpose is to provide demagnification equivalent to those in the future linear collider, which corresponds to a focused spot size in the FFTB of 1.7 microns (horizontal) by 60 manometers (vertical). In order to achieve the desired spot sizes, the FFTB beam optics must be tuned to eliminate aberrations and other errors, and to ensure that the optics conform to the desired final conditions and the measured initial conditions of the beam. Using a combination of incoming-beam diagnostics. beam-based local diagnostics, and global tuning algorithms, the FFTB beam size has been reduced to a stable final size of 1.7 microns by 70 manometers. In addition, the chromatic properties of the FFTB have been studied using two techniques and found to be acceptable. Descriptions of the hardware and techniques used in these studies are presented, along with results and suggestions for future research

  11. Expanded studies of linear collider final focus systems at the Final Focus Test Beam

    Energy Technology Data Exchange (ETDEWEB)

    Tenenbaum, Peter Gregory [Stanford Univ., CA (United States)

    1995-12-01

    In order to meet their luminosity goals, linear colliders operating in the center-of-mass energy range from 3,50 to 1,500 GeV will need to deliver beams which are as small as a few Manometers tall, with x:y aspect ratios as large as 100. The Final Focus Test Beam (FFTB) is a prototype for the final focus demanded by these colliders: its purpose is to provide demagnification equivalent to those in the future linear collider, which corresponds to a focused spot size in the FFTB of 1.7 microns (horizontal) by 60 manometers (vertical). In order to achieve the desired spot sizes, the FFTB beam optics must be tuned to eliminate aberrations and other errors, and to ensure that the optics conform to the desired final conditions and the measured initial conditions of the beam. Using a combination of incoming-beam diagnostics. beam-based local diagnostics, and global tuning algorithms, the FFTB beam size has been reduced to a stable final size of 1.7 microns by 70 manometers. In addition, the chromatic properties of the FFTB have been studied using two techniques and found to be acceptable. Descriptions of the hardware and techniques used in these studies are presented, along with results and suggestions for future research.

  12. Final focus nomenclature

    International Nuclear Information System (INIS)

    Erickson, R.

    1986-01-01

    The formal names and common names for all devices in the final focus system of the SLC are listed. The formal names consist of a device type designator, microprocessor designator, and a four-digit unit number

  13. FameLab - Swiss Semi Finals

    CERN Multimedia

    Corinne Pralavorio

    2012-01-01

    Twenty-two young scientists participated in the FameLab semi-final at CERN's Globe of Science and Innovation on 4 February, supported by a large audience and by more than 100 fans following via webcast. A panel of judges chose Lemmer and four other candidates to join five other semi-finalists at the national finals in Zurich on 30 March.

  14. Catarse e Final Feliz

    Directory of Open Access Journals (Sweden)

    Myriam Ávila

    2001-12-01

    Full Text Available Resumo: É a certeza de que nada mais – ou nada importante – pode acontecer após o final de um conto que permite o acontecimento da catarse. Se na maioria das narrativas existe algum tipo de dénouement, em algumas delas isso acontece de maneira especialmente satisfatória e afirmativa. O conto de fadas é uma dessas formas narrativas onde o efeito catártico é extremo e preenche objetivos específicos, de acordo com Bruno Bettelheim. Hollywood mimetizou essa forma como estratégia de sedução, iniciando a tradição do final feliz no cinema. A partir do conto de fadas Cinderela, em diferentes versões, juntamente com a animação homônima da Disney e ainda duas versões do filme Sabrina, será traçada aqui uma relação entre a catarse e o final feliz nos contos de fada, bem como seu uso pela indústria cultural. Palavras-chave: catarse, contos de fada, Hollywood

  15. Beryllium thin films for resistor applications

    Science.gov (United States)

    Fiet, O.

    1972-01-01

    Beryllium thin films have a protective oxidation resistant property at high temperature and high recrystallization temperature. However, the experimental film has very low temperature coefficient of resistance.

  16. Temperature-independent resistor for microelectronic circuits

    Science.gov (United States)

    Aegerter, S.; Libby, W. F.

    1970-01-01

    Heat treating insulating crystals in gaseous hydrogen atmosphere produce resistive device which is temperature-independent from 77 to 295 degrees K. Increasing the concentration of hydrogen within the crystal yields semiconductor, hybrid, and metallic conduction characteristics which are combined with a depletion layer at the surface.

  17. doped ZnO thick film resistors

    Indian Academy of Sciences (India)

    The characterization and ethanol gas sensing properties of pure and doped ZnO thick films were investigated. Thick films of pure zinc oxide were prepared by the screen printing technique. Pure zinc oxide was almost insensitive to ethanol. Thick films of Al2O3 (1 wt%) doped ZnO were observed to be highly sensitive to ...

  18. Final focus nomenclature

    Energy Technology Data Exchange (ETDEWEB)

    Erickson, R.

    1986-08-08

    The formal names and common names for all devices in the final focus system of the SLC are listed. The formal names consist of a device type designator, microprocessor designator, and a four-digit unit number. (LEW)

  19. 10 CFR 603.890 - Final performance report.

    Science.gov (United States)

    2010-01-01

    ... to Other Administrative Matters Financial and Programmatic Reporting § 603.890 Final performance report. A TIA must require a final performance report that addresses all major accomplishments under the... 10 Energy 4 2010-01-01 2010-01-01 false Final performance report. 603.890 Section 603.890 Energy...

  20. SLC Final Performance and Lessons

    International Nuclear Information System (INIS)

    Phinney, Nan

    2000-01-01

    The Stanford Linear Collider (SLC) was the first prototype of a new type of accelerator, the electron-positron linear collider. Many years of dedicated effort were required to understand the physics of this new technology and to develop the techniques for maximizing performance. Key issues were emittance dilution, stability, final beam optimization and background control. Precision, non-invasive diagnostics were required to measure and monitor the beams throughout the machine. Beam-based feedback systems were needed to stabilize energy, trajectory, intensity and the final beam size at the interaction point. variety of new tuning techniques were developed to correct for residual optical or alignment errors. The final focus system underwent a series of refinements in order to deliver sub-micron size beams. It also took many iterations to understand the sources of backgrounds and develop the methods to control them. The benefit from this accumulated experience was seen in the performance of the SLC during its final run in 1997-98. The luminosity increased by a factor of three to 3*10 30 and the 350,000 Z data sample delivered was nearly double that from all previous runs combined