Prolonged inhibition of luteinizing hormone and testosterone levels in male rats with the luteinizing hormone-releasing hormone antagonist SB-75.

Science.gov (United States)

Bokser, L; Bajusz, S; Groot, K; Schally, A V

1990-09-01

Inhibitory effects of the potent antagonist of luteinizing hormone-releasing hormone N-Ac-[3-(2-naphthyl)-D-alanine1,4-chloro-D-phenylalanine2,3- (3-pyridyl)-D- alanine3,D-citrulline6,D-alanine10]luteinizing hormone-releasing hormone (SB-75) free of edematogenic effects were investigated in male rats. In a study to determine the effect on luteinizing hormone levels in castrated male rats, SB-75 was injected s.c. in doses of 0.625, 1.25, 2.5, 5.0, and 10 micrograms. Blood samples were taken at different intervals for 48 hr. All doses of SB-75 significantly decreased luteinizing hormone levels for greater than 6 hr (P less than 0.01); this inhibition lasted for greater than 24 hr (P less than 0.01) with a dose of 5.0 micrograms and greater than 48 hr with 10 micrograms (P less than 0.05). Serum testosterone levels were also measured in intact male rats injected with SB-75 in doses of 25, 50, and 100 micrograms. All doses produced a dramatic fall in testosterone to castration levels 6 hr after injection (P less than 0.01); this inhibition of serum testosterone was maintained for greater than 72 hr, but only the 100-micrograms dose could keep testosterone in the castration range for greater than 24 hr (P less than 0.01). In another study using a specific RIA, we obtained the pharmacokinetic release pattern of SB-75 from two sustained delivery formulations of SB-75 pamoate microgranules and examined their effect on serum testosterone. After a single i.m. injection of 20 mg of one batch of microgranules, a large peak corresponding to SB-75 at 45.8 ng/ml was observed, corresponding to the "burst" effect. Levels of the analog decreased to 19.6 ng/ml on day 2, gradually reached a concentration of 4.7 ng/ml on day 7, and kept declining thereafter. Testosterone levels were reduced on day 1 (P less than 0.01) and were maintained at low values for greater than 7 days (P less than 0.05). In rats injected with 10 mg of SB-75 pamoate microgranules of the second batch, SB-75 serum

Yield of 117Sb, 118mSb, 120mSb, 122Sb, 124Sb in reactions Sn (p, xn)

International Nuclear Information System (INIS)

Dmitriev, P.P.; Konstantinov, I.O.

1993-01-01

Yield of 117 Sb, 118m Sb, 120m Sb, 122 Sb, 124 Sb from thick target depending on proton energy is measured. The maximum proton energy is 21.7±0.2 MeV. Antimony isotopes yield in separate reactions when irradiating of tin isotopes with 100% enrichment is determined using the method published earlier. The methods for production of 117 Sb, 118m Sb, 120m Sb, 122 Sb, 124 Sb with high radioisotope purity are shown. 13 refs., 1 fig., 3 tabs

4G/5G polymorphism modulates PAI-1 circulating levels in obese women.

Science.gov (United States)

Fernandes, Karla S; Sandrim, Valéria C

2012-05-01

The increase in plasminogen activator inhibitor type 1 (PAI-1) has been described as a risk factor to thrombosis-related diseases. In addition, it has been demonstrated that the variant 4G of polymorphism 4G/5G located in promoter region of PAI-1 gene is associated with higher PAI-1 levels. We investigate the role of this polymorphism on circulating PAI-1 concentration in a population of 57 obese women (23%, 4G/4G; 49%, 4G/5G and 28%, 5G/5G genotypes). Our results demonstrate a genotype-specific modulation on PAI-1 levels in obese women, thus 5G/5G genotype presented significantly lower levels of plasma PAI-1 when compared to 4G/4G group (46 ± 19 ng/mL vs. 63 ± 13 ng/mL, respectively). Our findings indicate that obese carriers of 4G/4G genotype may have increased risk to develop thrombotic diseases.

Optimization of growth parameters for MOVPE-grown GaSb and Ga1−xInxSb

International Nuclear Information System (INIS)

Miya, S.S.; Wagener, V.; Botha, J.R.

2012-01-01

The triethylgallium/trimethylantimony (TEGa/TMSb) precursor combination was used for the metal-organic vapour phase epitaxial growth of GaSb at a growth temperature of 520 °C at atmospheric pressure. Trimethylindium was added in the case of Ga 1−x In x Sb growth. The effects of group V flux to group III flux ratio (V/III ratio) on the crystallinity and optical properties of GaSb layers are reported. It has been observed from the crystalline quality and optical properties that nominal V/III ratios of values greater than unity are required for GaSb epitaxial layers grown at this temperature. It has also been shown that Ga 1−x In x Sb can be grown using TEGa as a source of gallium species at atmospheric pressure. The relationship between Ga 1−x In x Sb vapour composition and solid composition has been studied at a V/III ratio of 0.78.

Effect of InSb/In0.9Al0.1Sb superlattice buffer layer on the structural and electronic properties of InSb films

Science.gov (United States)

Zhao, Xiaomeng; Zhang, Yang; Guan, Min; Cui, Lijie; Wang, Baoqiang; Zhu, Zhanping; Zeng, Yiping

2017-07-01

The effect of InSb/In0.9Al0.1Sb buffer layers on InSb thin films grown on GaAs (0 0 1) substrate by molecular beam epitaxy (MBE) is investigated. The crystal quality and the surface morphology of InSb are characterized by XRD and AFM. The carrier transport property is researched through variable temperature hall test. The sharp interface between InSb/In0.9Al0.1Sb is demonstrated important for the high quality InSb thin film. We try different superlattice buffer layers by changing ratios, 2-0.5, thickness, 300-450 nm, and periods, 20-50. According to the function of the dislocation density to the absolute temperature below 150 K with different periods of SL buffers, we can find that the number of periods of superlattice is a major factor to decrease the density of threading dislocations. With the 50 periods SL buffer layer, the electron mobility of InSb at the room temperature and liquid nitrogen cooling temperature is ∼63,000 and ∼4600 cm2/V s, respectively. We deduce that the interface in the SL structure works as a filter layer to prevent the dislocation propagating to the upper InSb thin films.

'The Maggot Within': The state security apparatus in Ngũgĩ's Wizard ...

African Journals Online (AJOL)

'The Maggot Within': The state security apparatus in Ngũgĩ's Wizard of the Crow. ... the state security apparatus in Wizard of the Crow promote shady business deals and as well systematize corruption. ... AJOL African Journals Online. HOW TO ...

In As{sub 1–x}Sb{sub x} heteroepitaxial structures on compositionally graded GaInSb and AlGaInSb buffer layers

Energy Technology Data Exchange (ETDEWEB)

Guseynov, R. R.; Tanriverdiyev, V. A. [National Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan); Kipshidze, G., E-mail: gela.kishidze@stonybrook.ede [Stony Brook, Stony Brook University (United States); Aliyeva, Ye. N.; Aliguliyeva, Kh. V.; Abdullayev, N. A., E-mail: abnadir@mail.ru; Mamedov, N. T. [National Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan)

2017-04-15

Unrelaxed InAs{sub 1–x}Sb{sub x} (x = 0.43 and 0.38) alloy layers are produced by molecular-beam epitaxy on compositionally graded GaInSb and AlGaInSb buffer layers. The high quality of the thin films produced is confirmed by the results of high-resolution X-ray diffraction analysis and micro-Raman studies. The twomode type of transformation of the phonon spectra of InAs{sub 1–x}Sb{sub x} alloys is established.

Comparisons of TRAC-PF-1 calculations with semiscale Mod-3 small-break tests S-SB-P1 and S-SB-P7

International Nuclear Information System (INIS)

Sahota, M.S.

1982-01-01

Semiscale Tests S-SB-P1 and S-SB-P7 conducted in the Semiscale Mod-3 facility at the Idaho National Engineering Laboratory are analyzed using the latest released version of the Transient Reactor Analysis Code (TRAC-PF1). The results are used to assess TRAC-PF1 predictions of thermal-hydraulic phenomena and the effects of break size and pump operation on system response during slow transients. Tests S-SB-P1 and S-SB-P7 simulated an equivalent pressurized-water-reactor (PWR) 2.5% communicative cold-leg break for early and late pump trips, respectively, with only high-pressure injection (HPI) into the cold legs. The parameters examined include break flow, primary-system pressure response, primary-system mass distribution, and core characteristics

Role of hydrogen in Sb film deposition and characterization of Sb and GexSby films deposited by cyclic plasma enhanced chemical vapor deposition using metal-organic precursors

International Nuclear Information System (INIS)

Kim, Hyung Keun; Jung, Jin Hwan; Choi, Doo Jin

2012-01-01

To meet increasing demands for chemical vapor deposition methods for high performance phase-change memory, cyclic plasma enhanced chemical vapor deposition of Sb and Ge x Sb y phase-change films and characterization of their properties were performed. Two cycle sequences were designed to investigate the role of hydrogen gas as a reduction gas during Sb film deposition. Hydrogen gas was not introduced into the reaction chamber during the purge step in cycle sequence A and was introduced during the purge step for cycle sequence B. The role of hydrogen gas was investigated by comparing the results obtained from these two cycle sequences and was concluded to exert an effect by a combination of precursor decomposition, surface maintenance as a hydrogen termination agent, and surface etching. These roles of hydrogen gas are discussed through consideration of changes in deposition rates, the oxygen concentration on the surface of the Sb film, and observations of film surface morphology. Based on these results, Ge x Sb y phase-change films were deposited with an adequate flow rate of hydrogen gas. The Ge and Sb composition of the film was controlled with the designed cycle sequences. A strong oxygen affinity for Ge was observed during the X-ray photoelectron spectroscopy analysis of Sb 3d, Sb 4d, and Ge 3d orbitals. Based on the XPS results, the ratios of Ge to Sb were calculated to be Ge 0.32 Sb 0.68 , Ge 0.38 Sb 0.62 , Ge 0.44 Sb 0.56 , Ge 0.51 Sb 0.49 and Ge 0.67 Sb 0.33 for the G1S7, G1S3, G1S2, G1S1, and G2S1 cycles, respectively. Crystal structures of Sb, Ge, and the GeSb metastable phase were observed with various Ge x Sb y film compositions. Sb crystallinity decreased with respect to Ge crystallinity by increasing the Ge fraction. A current–voltage curve was introduced, and an electro-switching phenomenon was clearly generated at a typical voltage, V th . V th values increased in conjunction with an increased proportion of Ge. The Sb crystallinity decrease and V

Optimization of growth parameters for MOVPE-grown GaSb and Ga{sub 1-x}In{sub x}Sb

Energy Technology Data Exchange (ETDEWEB)

Miya, S.S.; Wagener, V. [Department of Physics, Private Bag X 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6001 (South Africa); Botha, J.R., E-mail: reinhardt.botha@nmmu.ac.za [Department of Physics, Private Bag X 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6001 (South Africa)

2012-05-15

The triethylgallium/trimethylantimony (TEGa/TMSb) precursor combination was used for the metal-organic vapour phase epitaxial growth of GaSb at a growth temperature of 520 Degree-Sign C at atmospheric pressure. Trimethylindium was added in the case of Ga{sub 1-x}In{sub x}Sb growth. The effects of group V flux to group III flux ratio (V/III ratio) on the crystallinity and optical properties of GaSb layers are reported. It has been observed from the crystalline quality and optical properties that nominal V/III ratios of values greater than unity are required for GaSb epitaxial layers grown at this temperature. It has also been shown that Ga{sub 1-x}In{sub x}Sb can be grown using TEGa as a source of gallium species at atmospheric pressure. The relationship between Ga{sub 1-x}In{sub x}Sb vapour composition and solid composition has been studied at a V/III ratio of 0.78.

GaSb solar cells grown on GaAs via interfacial misfit arrays for use in the III-Sb multi-junction cell

Science.gov (United States)

Nelson, George T.; Juang, Bor-Chau; Slocum, Michael A.; Bittner, Zachary S.; Laghumavarapu, Ramesh B.; Huffaker, Diana L.; Hubbard, Seth M.

2017-12-01

Growth of GaSb with low threading dislocation density directly on GaAs may be possible with the strategic strain relaxation of interfacial misfit arrays. This creates an opportunity for a multi-junction solar cell with access to a wide range of well-developed direct bandgap materials. Multi-junction cells with a single layer of GaSb/GaAs interfacial misfit arrays could achieve higher efficiency than state-of-the-art inverted metamorphic multi-junction cells while forgoing the need for costly compositionally graded buffer layers. To develop this technology, GaSb single junction cells were grown via molecular beam epitaxy on both GaSb and GaAs substrates to compare homoepitaxial and heteroepitaxial GaSb device results. The GaSb-on-GaSb cell had an AM1.5g efficiency of 5.5% and a 44-sun AM1.5d efficiency of 8.9%. The GaSb-on-GaAs cell was 1.0% efficient under AM1.5g and 4.5% at 44 suns. The lower performance of the heteroepitaxial cell was due to low minority carrier Shockley-Read-Hall lifetimes and bulk shunting caused by defects related to the mismatched growth. A physics-based device simulator was used to create an inverted triple-junction GaInP/GaAs/GaSb model. The model predicted that, with current GaSb-on-GaAs material quality, the not-current-matched, proof-of-concept cell would provide 0.5% absolute efficiency gain over a tandem GaInP/GaAs cell at 1 sun and 2.5% gain at 44 suns, indicating that the effectiveness of the GaSb junction was a function of concentration.

First-principles study of Sb adsorption on Ag(1 1 0)(2 x 2)

International Nuclear Information System (INIS)

Nie, J.L.; Xiao, H.Y.; Zu, X.T.; Gao Fei

2006-01-01

The adsorption of antimony atom on the Ag(1 1 0) surface has been studied within the density functional theory framework. It was turned out that Sb-Ag surface alloy was formed in which Sb atoms substitute Ag atom in the outermost layer and subsurface site absorption was not preferred, suggesting that Sb is well segregated to the surface. Geometric analysis showed that rumpling between substitutional Sb and Ag in the alloy surface is negligible. These results are found to agree well with the experimental finding of Nascimento et al. [Surf. Sci. 572 (2004) 337]. In addition, investigation of the diffusion of Ag atom on bare and Sb-covered Ag(1 1 0) surface showed that Ag adatoms will jump along the so call in-channel direction and Sb substitution has little effect on the diffusion of Ag adatoms on Ag(1 1 0) surface. Such diffusion behavior was found to be different from that of Ag adatoms on Ag(1 1 1) surface, where the diffusion energy barrier was reported to be significantly increased upon Sb substitution [Phys. Rev. Lett. 73 (1993) 2437

Lead-free soldering: Investigation of the Cu-Sn-Sb system along the Sn:Sb = 1:1 isopleth

Energy Technology Data Exchange (ETDEWEB)

Yuan, Y. [State Key Laboratory of Powder Metallurgy, Central South University, Changsha, Hunan 410083 (China); Department of Chemistry and Industrial Chemistry, University of Genoa, INSTM UdR Genoa, Via Dodecaneso 31, I-16146 Genoa (Italy); Borzone, G., E-mail: borzone@chimica.unige.it [Department of Chemistry and Industrial Chemistry, University of Genoa, INSTM UdR Genoa, Via Dodecaneso 31, I-16146 Genoa (Italy); Zanicchi, G.; Delsante, S. [Department of Chemistry and Industrial Chemistry, University of Genoa, INSTM UdR Genoa, Via Dodecaneso 31, I-16146 Genoa (Italy)

2011-02-03

Research highlights: > In the electronics industry, the solder alloys commonly used for assembly belong to the Sn-Pb system. Fulfilment of the EU RoHS (reduction of hazardous substances) requires the development of new lead-free alloys for applications in electronics, with the same or possibly better characteristics than the traditional Sn-Pb alloys. > This research concerns the investigation of the constitutional properties of the Cu-Sn-Sb system which is considered as lead-free replacement for high-temperature applications. - Abstract: The Cu-Sn-Sb system has been experimentally investigated by a combination of optical microscopy, differential scanning calorimetry (DSC) and electron probe microanalysis (EPMA). DSC was used to identify a total number of five invariant ternary reactions and the Sn:Sb = 1:1 isopleth section up to 65 at.% Cu was constructed by combining the DSC data with the EPMA analyses of annealed alloys and literature information. The composition limits of the binary phases were detected.

Evaporation of tetramers in Sb4n clusters and conditions for the formation of Sb2n+1 clusters

International Nuclear Information System (INIS)

Rayane, D.; Tribollet, B.; Broyer, M.; Melinon, P.; Cabaud, B.; Hoareau, A.

1989-01-01

Antimony clusters are produced by the inert gas condensation technique. They are found to be built from Sb 4 units. The fragmentation by evaporation of Sb 4 units is studied as a function of the excess energy in the cluster. By this way the binding energy of the Sb 4 units in the cluster is found to be about 1.5 eV, well below the binding energy of a Sb atom in the bulk and in Sb 4 (≅3 eV). The evolution of ionization potentials of Sb 4n clusters confirms that their structure is probably non metallic. Finally the possible metastable character of this Sb 4n structure is discussed. (orig.)

Are Sb4n (n>1) clusters weakly interacting tetrahedra?

International Nuclear Information System (INIS)

Kumar, V.

1993-03-01

The electronic and atomic structure of Sb 4 and Sb 8 clusters is studied using the ab-initio molecular dynamics method in the local density approximation. While for Sb 4 we obtain a regular tetrahedron to be about 2.0 eV lower in energy than a bent rhombus, for Sb 8 two structures, (1) two weakly interaction tetrahedra and (2) a bent rhombus interacting with a stretched tetrahedron, obtained from the simulated annealing lie only within about 0.1 eV indicating the importance of the bent rhombus structure for larger clusters. As compared to two isolated tetrahedra, the binding energy of Sb 8 is about 0.5 eV. Our results are thus in excellent agreement with the experimental data which show predominantly the abundance of tetramers above room temperature. (author). 18 refs, 5 figs, 1 tab

Thermoelectric properties of p-type pseudo-binary (Ag0.365Sb0.558Te) x -(Bi0.5Sb1.5Te3)1-x (x=0-1.0) alloys prepared by spark plasma sintering

International Nuclear Information System (INIS)

Cui, J.L.; Xue, H.F.; Xiu, W.J.; Jiang, L.; Ying, P.Z.

2006-01-01

In this paper, pseudo-binary (Ag 0.365 Sb 0.558 Te) x -(Bi 0.5 Sb 1.5 Te 3 ) 1- x (x=0-1.0) alloys were prepared using spark plasma sintering technique, and the composition-dependent thermoelectric properties were evaluated. Electrical conductivities range from 7.9x10 4 to 15.6x10 4 Ω -1 m -1 at temperatures of 507 and 318 K, respectively, being about 3.0 and 8.5 times those of Bi 0.5 Sb 1.5 Te 3 alloy at the corresponding temperatures. The optimal dimensionless figure of merit (ZT) of the sample with molar fraction x=0.025 reaches 1.1 at 478 K, whereas that of the ternary Bi 0.5 Sb 1.5 Te 3 alloy is 0.58 near room temperature. The results also reveal that a direct introduction of Ag 0.365 Sb 0.558 Te in the Bi-Sb-Te system is much more effective to the property improvement than naturally precipitated Ag 0.365 Sb 0.558 Te in the Ag-doped Ag-Bi-Sb-Te system. - Graphical abstract: The temperature dependence of the dimensionless thermoelectric figure of merit ZT for different (Ag 0.365 Sb 0.558 Te) x -(Bi 0.5 Sb 1.5 Te 3 ) 1- x (x=0-1.0) alloys prepared by spark plasma sintering

Flake structured SnSbCo/MCMB/C composite as high performance anodes for lithium ion battery

Energy Technology Data Exchange (ETDEWEB)

Chen, Xiaoqiu [School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510006 (China); Engineering Research Center of Materials and Technology for Electrochemical Energy Storage (Ministry of Education), Guangzhou 510006 (China); Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510006 (China); Guangdong Engineering Technology Research Center of Low Carbon and Advanced Energy Materials, Guangzhou 510631 (China); Ru, Qiang, E-mail: rq7702@yeah.net [School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510006 (China); Engineering Research Center of Materials and Technology for Electrochemical Energy Storage (Ministry of Education), Guangzhou 510006 (China); Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510006 (China); Guangdong Engineering Technology Research Center of Low Carbon and Advanced Energy Materials, Guangzhou 510631 (China); Zhao, Doudou; Mo, Yudi; Hu, Shejun [School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510006 (China); Engineering Research Center of Materials and Technology for Electrochemical Energy Storage (Ministry of Education), Guangzhou 510006 (China); Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510006 (China); Guangdong Engineering Technology Research Center of Low Carbon and Advanced Energy Materials, Guangzhou 510631 (China)

2015-10-15

SnSbCo/MCMB/C composite with flake structure were prepared by stepwise synthesis method. Firstly, SnSbCo nanoparticles were fabricated by co-precipitation, and then nanosized SnSbCo alloy were embedded in mesocarbon microbeads (MCMB) by ball-milling to synthesize primitive SnSbCo/MCMB hybrids, followed by carbonization of phenolic resin to produce an outer layer of carbon coating. The crystal structure, morphology and electrochemical properties of the SnSbCo/MCMB/C composite were evaluated by X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), transmission electron microscopy (TEM) and galvanostatical cycling tests. Compared with bare SnSbCo alloy and SnSbCo/MCMB hybrids, the efficiently enhanced electrochemical performance of SnSbCo/MCMB/C composite were mainly ascribed to the improved electron conductivity and volume buffering effect provided by the amorphous carbon coating. The resultant SnSbCo/MCMB/C composite delivered an initial discharge capacity of 848 mAh g{sup −1} under 100 mA g{sup −1}, with a good capacity retention of 85.6% after 70 cycles. The composite also exhibited excellent rate capability of 603 mAh g{sup −1} and 405 mAh g{sup −1} at the current density of 200 mA g{sup −1} and 1000 mA g{sup −1}, respectively. - Highlights: • Flake structured SnSbCo/MCMB/C composite have been prepared by stepwise synthesis method. • SnSbCo/MCMB/C composite show good cycle performance and rate capability. • Using both MCMB and phenolic resin as dual carbon sources.

Liquid epitaxy of Gasub(1-x)Alsub(x)Sb varizone structures

International Nuclear Information System (INIS)

Dedegkaev, T.T.; Kryukov, I.I.; Lidejkis, T.P.; Tsarenkov, B.V.; Yakovlev, Yu.P.

1980-01-01

To produce Gasub (1-x)Alsub(x)Sb varizon structures with preset limits for the change of the width of Eg forbidden zone and preset Eg gradient value and sign, epitaxy growth from the liquid phase of solid solutions of GaSb-AlSb system was investigated. The epitaxy was realized in two ways: by cooling the saturated solution of Ga-Al-Sb melt and using the isometric contineous mixing of two solution-melts with different Al content. As a result it was ascertained that: 1 the epitaxy by cooling a solution-melt permitted to produce Gasub(1-x)Alsub(x)Sb varizon structures only with small Eg gradients (<=30eV/cm); 2 the epitaxy by contineously mixing the solution-melts permitted to produce Gasub(1-x)Alsub(x)Sb varizon structures with increasing and decreasing Eg in the direction of layer growth in the whole interval of compositions. Eg gradient can be as great as thousands of eV/cm

Slurry sampling flow injection chemical vapor generation inductively coupled plasma mass spectrometry for the determination of trace Ge, As, Cd, Sb, Hg and Bi in cosmetic lotions

Energy Technology Data Exchange (ETDEWEB)

Chen, Wei-Ni [Department of Chemistry, National Sun Yat-sen University, Kaohsiung 80424, Taiwan (China); Jiang, Shiuh-Jen, E-mail: sjjiang@faculty.nsysu.edu.tw [Department of Chemistry, National Sun Yat-sen University, Kaohsiung 80424, Taiwan (China); Department of Medical Laboratory Science and Biotechnology, Kaohsiung Medical University, Kaohsiung 80708, Taiwan (China); Chen, Yen-Ling [Department of Fragrance and Cosmetic Science, Kaohsiung Medical University, Kaohsiung 80708, Taiwan (China); Sahayam, A.C. [National Centre for Compositional Characterisation of Materials (CCCM), Hyderabad (India)

2015-02-20

Highlights: • Determination of Ge, As, Cd, Sb, Hg and Bi in cosmetic lotions in a single run. • Accurate analysis using isotope dilution and standard addition methods. • Vapor generation ICP-MS yielded superior detection limits compared to ETV-ICP-MS. • No sample dissolution increased sample through put. • Analysis of GBW09305 Cosmetic (Cream) reference material for accuracy. - Abstract: A slurry sampling inductively coupled plasma mass spectrometry (ICP-MS) method has been developed for the determination of Ge, As, Cd, Sb, Hg and Bi in cosmetic lotions using flow injection (FI) vapor generation (VG) as the sample introduction system. A slurry containing 2% m/v lotion, 2% m/v thiourea, 0.05% m/v L-cysteine, 0.5 μg mL{sup −1} Co(II), 0.1% m/v Triton X-100 and 1.2% v/v HCl was injected into a VG-ICP-MS system for the determination of Ge, As, Cd, Sb, Hg and Bi without dissolution and mineralization. Because the sensitivities of the analytes in the slurry and that of aqueous solution were quite different, an isotope dilution method and a standard addition method were used for the determination. This method has been validated by the determination of Ge, As, Cd, Sb, Hg and Bi in GBW09305 Cosmetic (Cream) reference material. The method was also applied for the determination of Ge, As, Cd, Sb, Hg and Bi in three cosmetic lotion samples obtained locally. The analysis results of the reference material agreed with the certified value and/or ETV-ICP-MS results. The detection limit estimated from the standard addition curve was 0.025, 0.1, 0.2, 0.1, 0.15, and 0.03 ng g{sup −1} for Ge, As, Cd, Sb, Hg and Bi, respectively, in original cosmetic lotion sample.

Slurry sampling flow injection chemical vapor generation inductively coupled plasma mass spectrometry for the determination of trace Ge, As, Cd, Sb, Hg and Bi in cosmetic lotions

International Nuclear Information System (INIS)

Chen, Wei-Ni; Jiang, Shiuh-Jen; Chen, Yen-Ling; Sahayam, A.C.

2015-01-01

Highlights: • Determination of Ge, As, Cd, Sb, Hg and Bi in cosmetic lotions in a single run. • Accurate analysis using isotope dilution and standard addition methods. • Vapor generation ICP-MS yielded superior detection limits compared to ETV-ICP-MS. • No sample dissolution increased sample through put. • Analysis of GBW09305 Cosmetic (Cream) reference material for accuracy. - Abstract: A slurry sampling inductively coupled plasma mass spectrometry (ICP-MS) method has been developed for the determination of Ge, As, Cd, Sb, Hg and Bi in cosmetic lotions using flow injection (FI) vapor generation (VG) as the sample introduction system. A slurry containing 2% m/v lotion, 2% m/v thiourea, 0.05% m/v L-cysteine, 0.5 μg mL −1 Co(II), 0.1% m/v Triton X-100 and 1.2% v/v HCl was injected into a VG-ICP-MS system for the determination of Ge, As, Cd, Sb, Hg and Bi without dissolution and mineralization. Because the sensitivities of the analytes in the slurry and that of aqueous solution were quite different, an isotope dilution method and a standard addition method were used for the determination. This method has been validated by the determination of Ge, As, Cd, Sb, Hg and Bi in GBW09305 Cosmetic (Cream) reference material. The method was also applied for the determination of Ge, As, Cd, Sb, Hg and Bi in three cosmetic lotion samples obtained locally. The analysis results of the reference material agreed with the certified value and/or ETV-ICP-MS results. The detection limit estimated from the standard addition curve was 0.025, 0.1, 0.2, 0.1, 0.15, and 0.03 ng g −1 for Ge, As, Cd, Sb, Hg and Bi, respectively, in original cosmetic lotion sample

High quality InAsSb grown on InP substrates using AlSb/AlAsSb buffer layers

International Nuclear Information System (INIS)

Wu, B.-R.; Liao, C.; Cheng, K. Y.

2008-01-01

High quality InAsSb grown on semi-insulating InP substrates by molecular beam epitaxy was achieved using AlSb/AlAsSb structure as the buffer layer. A 1000 A InAsSb layer grown on top of 1 μm AlSb/AlAsSb buffer layer showed a room temperature electron mobility of ∼12 000 cm 2 /V s. High structural quality and low misfit defect density were also demonstrated in the InAsSb layer. This novel AlSb/AlAsSb buffer layer structure with the AlAsSb layer lattice matched to InP substrates could enhance the performance of optoelectronic devices utilizing 6.1 A family of compound semiconductor alloys

Simultaneous removal of Cd(II) and Sb(V) by Fe–Mn binary oxide: Positive effects of Cd(II) on Sb(V) adsorption

Energy Technology Data Exchange (ETDEWEB)

Liu, Ruiping [Key Laboratory of Drinking Water Science and Technology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085 (China); Liu, Feng [Key Laboratory of Drinking Water Science and Technology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Hu, Chengzhi, E-mail: czhu@rcees.ac.cn [Key Laboratory of Drinking Water Science and Technology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085 (China); He, Zan [Key Laboratory of Drinking Water Science and Technology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Liu, Huijuan; Qu, Jiuhui [Key Laboratory of Drinking Water Science and Technology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085 (China)

2015-12-30

Highlights: • Fe–Mn binary oxide achieves the simultaneous removal of Cd(II) and Sb(V). • Cd(II) at above 0.25 mmol/L improves Sb(V) adsorption onto FMBO. • Cd(II) improves more significant Sb(V) adsorption than Ca{sup 2+} and Mn{sup 2+}. • Sb(V) adsorption decreases whereas Cd(II) adsorption increases with elevated pH. • The increased ζ-potential and Cd(II)–Sb(V) precipitation favors Sb(V) adsorption. - Abstract: The coexistence of cadmium ion (Cd(II)) and antimonate (Sb(V)) creates the need for their simultaneous removal. This study aims to investigate the effects of positively-charged Cd(II) on the removal of negative Sb(V) ions by Fe–Mn binary oxide (FMBO) and associated mechanisms. The maximum Sb(V) adsorption density (Q{sub max,Sb(V)}) increased from 1.02 to 1.32 and 2.01 mmol/g in the presence of Cd(II) at 0.25 and 0.50 mmol/L. Cd{sup 2+} exhibited a more significant positive effect than both calcium ion (Ca{sup 2+}) and manganese ion (Mn{sup 2+}). Cd{sup 2+} showed higher affinity towards FMBO and increased its ζ-potential more significantly compared to Ca{sup 2+} and Mn{sup 2+}. The simultaneous adsorption of Sb(V) and Cd(II) onto FMBO can be achieved over a wide initial pH (pH{sub i}) range from 2 to 9, and Q{sub Sb(V)} decreases whereas Q{sub Cd(II)} increases with elevated pH{sub i}. Their combined values, as expressed by Q{sub Sb(V)+Cd(II)}, amount to about 2 mmol/g and vary slightly in the pH{sub i} range 4–9. FTIR and XPS spectra indicate the significant synergistic effect of Cd(II) on Sb(V) adsorption onto FMBO, and that little chemical valence transformation occurs. These results may be valuable for the treatment of wastewater with coexisting heavy metals such as Cd(II) and Sb(V).

Sb(III)-Imprinted Organic-Inorganic Hybrid Sorbent Prepared by Hydrothermal-Assisted Surface Imprinting Technique for Selective Adsorption of Sb(III)

Science.gov (United States)

Zhang, Dan; Zhao, Yue; Xu, Hong-Bo

2018-03-01

Sb(III)-imprinted organic-inorganic hybrid sorbent was prepared by hydrothermal-assisted surface imprinting technique and was characterized by Fourier transform infrared spectroscopy, scanning electron microscopy coupled to an energy dispersive spectrometer and N2 adsorption/desorption isotherms. Hydrothermal-assisted process can improve the selectivity of the Sb(III)-imprinted hybrid sorbent for Sb(III) due to stable control of temperature and pressure. The Sb(III)-imprinted hybrid sorbent IIS indicated higher selectivity for Sb(III), had high static adsorption capacity of 37.3 mg g-1 for Sb(III), displayed stable adsorption capacity in pH range from 4 to 8, reached an rapid adsorption equilibrium within 30 min. According to the correlation coefficient ( r 2 > 0.99), the experimental data fitted better the pseudo-second-order kinetic model and Langmuir equilibrium isotherm.

Growth of GaSb1-xBix by molecular beam epitaxy

DEFF Research Database (Denmark)

Song, Yuxin; Wang, Shumin; Roy, Ivy Saha

2012-01-01

Molecular beam epitaxy for GaSb1-xBix is investigated in this article. The growth window for incorporation of Bi in GaSb was found. Strategies of avoiding formation of Bi droplets and enhancing Bi incorporation were studied. The Bi incorporation was confirmed by SIMS and RBS measurements. The Bi ......As substrates were compared and no apparent difference for Bi incorporation was found.......Molecular beam epitaxy for GaSb1-xBix is investigated in this article. The growth window for incorporation of Bi in GaSb was found. Strategies of avoiding formation of Bi droplets and enhancing Bi incorporation were studied. The Bi incorporation was confirmed by SIMS and RBS measurements. The Bi...... concentration in the samples was found to increase with increasing growth temperature and Bi flux. The position of GaSb1-xBix layer peak in XRD rocking curves is found to be correlated to Bi composition. Surface and structural properties of the samples were also investigated. Samples grown on GaSb and Ga...

Microstructure analyses and thermoelectric properties of Ag1−xPb18Sb1+yTe20

International Nuclear Information System (INIS)

Perlt, S.; Höche, Th.; Dadda, J.; Müller, E.; Bauer Pereira, P.; Hermann, R.; Sarahan, M.; Pippel, E.; Brydson, R.

2012-01-01

This study reports microstructural investigations of long-term annealed Ag 1−x Pb m Sb 1+y Te 2+m (m=18, x=y=0, hereinafter referred to as AgPb 18 SbTe 20 ) (Lead–Antimony–Silver–Tellurium, LAST-18) as well as of Ag 1−x Pb 18 Sb 1+y Te 20 , i.e. Ag-deficient and Sb-excess LAST-18 (x≠0,y≠0), respectively. Two different length scales are explored. The micrometer scale was evaluated by SEM to analyze the volume fraction and the number of secondary phases as well as the impact of processing parameters on the homogeneity of bulk samples. For AgPb 18 SbTe 20 , site-specific FIB liftout of TEM lamellae from thermoelectrically characterized samples was accomplished to investigate the structure on the nanometer scale. High-resolution TEM and energy-filtered TEM were performed to reveal shape and size distribution of nanoprecipitates, respectively. A hypothesis concerning the structure–property relationship is set out within the frame of a gradient annealing experiment. This study is completed by results dealing with inhomogeneities on the micrometer scale of Ag 1−x Pb 18 Sb 1+y Te 20 and its electronic properties. Highlights: ► SEM and TEM microstructure investigation of long-term annealed AgPb 18 SbTe 20 . ► SEM and thermoelectric studies on Ag 1−x Pb 18 Sb 1+y Te 20 . ► Discussion concerning structure–property relationship in long-term annealed AgPb 18 SbTe 20 . ► Correlation between Ag 1−x Pb 18 Sb 1+y Te 20 microscale structure and electronic properties.

Transport and magnetic properties of CezLa1-zFe4Sb12

International Nuclear Information System (INIS)

Viennois, R; Charar, S; Ravot, D; Mauger, A; Haen, P; Tedenac, J C

2006-01-01

Transport and magnetic properties of Ce z La 1-z Fe 4 Sb 12 have been investigated in the whole range of substitution 0 Ce to the resistivity goes through a maximum at temperature ∼ 140K, close to the spin fluctuation temperature T sf for CeFe 4 Sb 12 . T sf is the single magnetic energy scale which accounts for the magnetic properties of the Ce Kondo lattice. At low temperature, the resistivity shows a T 2 -deviation from saturation. At z≤0.7 this is the behaviour expected for Ce impurities in metals in the Kondo limit. At z = 1, however, Hall effect measurements show that this behaviour is due to a decrease of the free carrier concentration which we can attribute to the formation of a hybridization pseudogap E g ∼ 25 meV. Upon dilution of the cerium, E g decreases and this pseudogap is smeared out, replaced by the Kondo resonance at the Fermi level characteristic of Kondo impurities in the small z limit

SB225002 Induces Cell Death and Cell Cycle Arrest in Acute Lymphoblastic Leukemia Cells through the Activation of GLIPR1

Science.gov (United States)

Leal, Paulo C.; Bhasin, Manoj K.; Zenatti, Priscila Pini; Nunes, Ricardo J.; Yunes, Rosendo A.; Nowill, Alexandre E.; Libermann, Towia A.; Zerbini, Luiz Fernando; Yunes, José Andrés

2015-01-01

Acute Lymphoblastic Leukemia (ALL) is the most frequent childhood malignancy. In the effort to find new anti-leukemic agents, we evaluated the small drug SB225002 (N-(2-hydroxy-4-nitrophenyl)-N’-(2-bromophenyl)urea). Although initially described as a selective antagonist of CXCR2, later studies have identified other cellular targets for SB225002, with potential medicinal use in cancer. We found that SB225002 has a significant pro-apoptotic effect against both B- and T-ALL cell lines. Cell cycle analysis demonstrated that treatment with SB225002 induces G2-M cell cycle arrest. Transcriptional profiling revealed that SB225002-mediated apoptosis triggered a transcriptional program typical of tubulin binding agents. Network analysis revealed the activation of genes linked to the JUN and p53 pathways and inhibition of genes linked to the TNF pathway. Early cellular effects activated by SB225002 included the up-regulation of GLIPR1, a p53-target gene shown to have pro-apoptotic activities in prostate and bladder cancer. Silencing of GLIPR1 in B- and T-ALL cell lines resulted in increased resistance to SB225002. Although SB225002 promoted ROS increase in ALL cells, antioxidant N-Acetyl Cysteine pre-treatment only modestly attenuated cell death, implying that the pro-apoptotic effects of SB225002 are not exclusively mediated by ROS. Moreover, GLIPR1 silencing resulted in increased ROS levels both in untreated and SB225002-treated cells. In conclusion, SB225002 induces cell cycle arrest and apoptosis in different B- and T-ALL cell lines. Inhibition of tubulin function with concurrent activation of the p53 pathway, in particular, its downstream target GLIPR1, seems to underlie the anti-leukemic effect of SB225002. PMID:26302043

Sb{sup III} - Sb{sup V} Exchange Reaction in Hydrochloric: Acid Solutions; Echange Sb{sup III}-Sb{sup V} dans des Solutions d'Acide Chlorhydrique; Reaktsiya obmena Sb(III) - Sb(V) v rastvorakh khloristovodorodnoj kisloty; Intercambio Sb{sup III}-Sb{sup V} en Soluciones de HCl

Energy Technology Data Exchange (ETDEWEB)

Kambara, T.; Yamaguchi, K.; Yasuba, S. [Shizuoka University, Shizuoka City (Japan)

1965-10-15

The exchange reaction of Sb{sup III} - Sb{sup V} in solutions of low HCl concentrations was studied using {sup 124}Sb as a tracer. The effects of HCl concentrations and chemical forms of antimony on the exchange rate were investigated. The HCl concentrations of the antimony solutions ((Sb{sup III}) =(Sb{sup V}) = 6.8 x 10{sup -4}M) were changed from 0.8 to 4.0M and the half-time for the exchange was measured by plotting log (1 - F) versus time t to calculate the exchange rate assuming the second-ordet reaction. It was found that the exchange rate was sharply increased with the increase of HCl concentrations (at 25 Degree-Sign C, from 0.8 to 2.0M) and at 2.0M HCl concentration the rate reached the maximum, from which the rate was decreased with the increase of HCl concentrations (at 25 Degree-Sign C, from 2.0 to 4.0M). Two sorts of Sb{sup V} species were used for our investigations, i.e. one was used directly after the dilution of 10M HCl Sb{sup V} solution with water and the other was used after 24 hours standing at room temperature from the dilution. (The Sb{sup III} species were also kept standing after preparation from 10M HCl Sb{sup III} solution.) In both cases the maximum rates were found to exist at 2.0M HCl concentration. The rate R{sub 1} for the former (directly after dilution) was 4.5 x 10{sup -6} mole litre{sup -1} min{sup -1} and the rate R{sub 2} for the latter (24 hours standing) was 1.2 x 10{sup -}{sub 6} mole litre. Also the activation energy for these cases was found to be 12.2 kcal/mole and 19.1 kcal/mole. By spectrophotometric studies, the Sb{sup V} species of the former type were found to be mainly consisting of SbCl{sup -}{sub 6} and the species of the latter type to be of SbCl{sub 4}(OH){sup -}{sub 2}, etc. Besides these facts the form of Sb{sup III} species was found to have no influence on the exchange rate. A much sharper increase of the exchange rate was observed when the HCl concentration of the antimony solution was fixed at 0.8M and

Quaternary InGaAsSb Thermophotovoltaic Diodes

International Nuclear Information System (INIS)

MW Dashiell; JF Beausang; H Ehsani; GJ Nichols; DM Depoy; LR Danielson; P Talamo; KD Rahner; EJ Brown; SR Burger; PM Foruspring; WF Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; J Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryi

2006-01-01

In x Ga 1-x As y Sb 1-y thermophotovoltaic (TPV) diodes were grown lattice-matched to GaSb substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) in the bandgap range of E G = 0.5 to 0.6eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density of η TPV = 19.7% and PD =0.58 W/cm 2 respectively for a radiator temperature of T radiator = 950 C, diode temperature of T diode = 27 C, and diode bandgap of E G = 0.53eV. Practical limits to TPV energy conversion efficiency are established using measured recombination coefficients and optical properties of front surface spectral control filters, which for 0.53eV InGaAsSb TPV energy conversion is η TPV = 28% and PD = 0.85W/cm 2 at the above operating temperatures. The most severe performance limits are imposed by (1) diode open-circuit voltage (VOC) limits due to intrinsic Auger recombination and (2) parasitic photon absorption in the inactive regions of the module. Experimentally, the diode V OC is 15% below the practical limit imposed by intrinsic Auger recombination processes. Analysis of InGaAsSb diode electrical performance vs. diode architecture indicate that the V OC and thus efficiency is limited by extrinsic recombination processes such as through bulk defects

Simultaneous speciation and preservation of aqueous As, Sb and Se redox couples

Science.gov (United States)

Wu, D.; Pichler, T.

2014-12-01

We developed a new method for the simultaneous speciation analysis of inorganic arsenic (III, V), antimony (III, V) and selenium (IV, VI) in water samples via double-focusing sector field-inductively coupled plasma-mass spectrometry (SF-ICP-MS) coupled to high performance liquid chromatography (HPLC). A Hamilton PRX-X100 anion exchange column with EDTA (pH of 4.7) and 3% methanol as mobile phase was used for species separation. The flow rate was set to 1.5 mL min-1 and a solvent gradient (linear ramp from 5 mM to 30 mM) was applied. The overall analysis time for all six desired species was 11 minutes. The detection limits for As(III), As(V), Sb(III), Sb(V), Se(VI) and Se(IV) were 0.02 μg L-1, 0.06 μg L-1, 0.2 μg L-1, 0.02 μg L-1, 0.2 μg L-1 and 0.4 μg L-1 respectively. The retention times for As(III), As(V), Sb(III), Sb(V), Se(IV) and Se(VI) were 1.70, 2.94, 7.14, 2.28, 3.38 and 9.36 min, respectively. Subsequently, the stability of inorganic As(III, V), Sb(III, V) and Se(IV, VI) species in different water samples (groundwater, lake water and river water) was studied over a time scale of 11 weeks. High concentrations of Fe (25.0 mg/L) and Mn (25.0 mg/L) were added to different matrices to simulate Fe and Mn rich environments. All samples were spiked with 5.0 μg/L As(III, V) and Sb(III, V) and 15.0 μg/L Se(IV, VI).. We investigated several strategies for species preservation, i.e., EDTA only, EDTA combined with acidification (HCl, HNO3, formic acid and acetic acid). The preserved samples were stored at 4 °C in the dark. For comparison, another subsample without any preservation was stored at room temperature in the presence of light. The results showed that a combination EDTA acidified to pH of 3 can be used to preserve all species for at least 11 weeks. While EDTA only (pH = 6) failed to preserve As and Sb species, although Se species were preserved.

Structural and optical studies of FeSb{sub 2} under high pressure

Energy Technology Data Exchange (ETDEWEB)

Poffo, C.M.; Souza, S.M.; Triches, D.M. [Departamento de Engenharia Mecanica, Universidade Federal de Santa Catarina, Campus Universitario Trindade, S/N, C.P. 476, 88040-900 Florianopolis, Santa Catarina (Brazil); Lima, J.C. de, E-mail: fsc1jcd@fisica.ufsc.br [Departamento de Fisica, Universidade Federal de Santa Catarina, Campus Universitario Trindade, S/N, C.P. 476, 88040-900 Florianopolis, Santa Catarina (Brazil); Grandi, T.A. [Departamento de Fisica, Universidade Federal de Santa Catarina, Campus Universitario Trindade, S/N, C.P. 476, 88040-900 Florianopolis, Santa Catarina (Brazil); Polian, A.; Gauthier, M. [Physique des Milieux Denses, IMPMC, CNRS-UMR 7590, Universite Pierre et Marie Curie-Paris 6, B115, 4 Place Jussieu, 75252 Paris Cedex 05 (France)

2012-12-15

Nanostructured orthorhombic FeSb{sub 2} was formed along with an amorphous phase, by mechanical alloying from a mixture of Fe and Sb powders. The influence of pressure on the structural and optical properties of the material was investigated by X-ray diffraction (XRD) and Raman spectroscopy (RS) up to 28.2 and 45.2 GPa, respectively. The volume fraction of the amorphous phase increased with increasing pressure. For pressures above 14.3 GPa, a tetragonal FeSb{sub 2} phase was also observed. For the orthorhombic FeSb{sub 2} phase, the pressure dependence of the volume fitted to a Birch-Murnaghan equation of state gave a bulk modulus B{sub 0}=75.5{+-}3.2 GPa, and its derivative B{sub 0}{sup Prime }=7.2{+-}0.7. For the orthorhombic FeSb{sub 2} phase, the Raman active A{sub g}{sup 2} mode was observed up to 28.3 GPa, while the B{sub 1g}{sup 2} mode was not for pressures larger than 14 GPa. For pressures above 21 GPa, the Raman active A{sub 1g} mode of a tetragonal FeSb{sub 2} phase was observed.

Simultaneous removal of Cd(II) and Sb(V) by Fe–Mn binary oxide: Positive effects of Cd(II) on Sb(V) adsorption

International Nuclear Information System (INIS)

Liu, Ruiping; Liu, Feng; Hu, Chengzhi; He, Zan; Liu, Huijuan; Qu, Jiuhui

2015-01-01

Highlights: • Fe–Mn binary oxide achieves the simultaneous removal of Cd(II) and Sb(V). • Cd(II) at above 0.25 mmol/L improves Sb(V) adsorption onto FMBO. • Cd(II) improves more significant Sb(V) adsorption than Ca"2"+ and Mn"2"+. • Sb(V) adsorption decreases whereas Cd(II) adsorption increases with elevated pH. • The increased ζ-potential and Cd(II)–Sb(V) precipitation favors Sb(V) adsorption. - Abstract: The coexistence of cadmium ion (Cd(II)) and antimonate (Sb(V)) creates the need for their simultaneous removal. This study aims to investigate the effects of positively-charged Cd(II) on the removal of negative Sb(V) ions by Fe–Mn binary oxide (FMBO) and associated mechanisms. The maximum Sb(V) adsorption density (Q_m_a_x_,_S_b_(_V_)) increased from 1.02 to 1.32 and 2.01 mmol/g in the presence of Cd(II) at 0.25 and 0.50 mmol/L. Cd"2"+ exhibited a more significant positive effect than both calcium ion (Ca"2"+) and manganese ion (Mn"2"+). Cd"2"+ showed higher affinity towards FMBO and increased its ζ-potential more significantly compared to Ca"2"+ and Mn"2"+. The simultaneous adsorption of Sb(V) and Cd(II) onto FMBO can be achieved over a wide initial pH (pH_i) range from 2 to 9, and Q_S_b_(_V_) decreases whereas Q_C_d_(_I_I_) increases with elevated pH_i. Their combined values, as expressed by Q_S_b_(_V_)_+_C_d_(_I_I_), amount to about 2 mmol/g and vary slightly in the pH_i range 4–9. FTIR and XPS spectra indicate the significant synergistic effect of Cd(II) on Sb(V) adsorption onto FMBO, and that little chemical valence transformation occurs. These results may be valuable for the treatment of wastewater with coexisting heavy metals such as Cd(II) and Sb(V).

Interference-free determination of sub ng kg-1 levels of long-lived 93Zr in the presence of high concentrations (μg kg-1) of 93Mo and 93Nb using ICP-MS/MS.

Science.gov (United States)

Petrov, Panayot; Russell, Ben; Douglas, David N; Goenaga-Infante, Heidi

2018-01-01

Long-lived high abundance radionuclides are of increasing interest with regard to decommissioning of nuclear sites and longer term nuclear waste storage and disposal. In many cases, no routine technique is available for their measurement in nuclear waste and low-level (ng kg -1 ) environmental samples. Recent advances in ICP-MS technology offer attractive features for the selective and sensitive determination of a wide range of long-lived radionuclides. In this work, inductively coupled plasma-tandem mass spectrometry (ICP-MS/MS)-based methodology, suitable for accurate routine determinations of 93 Zr at very low (ng kg -1 ) levels in the presence of high levels (μg kg -1 ) of the isobaric interferents 93 Nb and 93 Mo (often present in nuclear waste samples), is reported for the first time. Additionally, a novel and systematic strategy for method development based on the use of non-radioactive isotopes is proposed. It relies on gas-phase chemical reactions for different molecular ion formation to achieve isobaric interference removal. Using cell gas mixtures of NH 3 /He/H 2 or H 2 /O 2 , and suitable mass shifts, the signal from the 93 Nb and 93 Mo isobaric interferences on 93 Zr were suppressed by up to 5 orders of magnitude. The achieved limit of detection for 93 Zr was 1.3 × 10 -5  Bq g -1 (equivalent to 0.14 ng kg -1 ). The sample analysis time is 2 min, which represents a significant improvement in terms of sample throughput, compared to liquid scintillation counting methods. The method described here can be used for routine measurements of 93 Zr at environmentally relevant levels. It can also be combined with radiometric techniques for use towards the standardisation of 93 Zr measurements. Graphical abstract Interference-free determination of 93 Zr in the presence of high concentrations of isobaric 93 Mo and 93 Nb by ICP-MS/MS.

Density functional simulations of Sb-rich GeSbTe phase change alloys

International Nuclear Information System (INIS)

Gabardi, S; Bernasconi, M; Caravati, S; Parrinello, M

2012-01-01

We generated models of the amorphous phase of Sb-rich GeSbTe phase change alloys by quenching from the melt within density functional molecular dynamics. We considered the two compositions Ge 1 Sb 1 Te 1 and Ge 2 Sb 4 Te 5 . Comparison with previous results on the most studied Ge 2 Sb 2 Te 5 allowed us to draw some conclusions on the dependence of the structural properties of the amorphous phase on the alloy composition. Vibrational and electronic properties were also scrutinized. Phonons at high frequencies above 200 cm -1 are localized in tetrahedra around Ge atoms in Sb-rich compounds as well as in Ge 2 Sb 2 Te 5 . All compounds are semiconducting in the amorphous phase, with a band gap in the range 0.7-1.0 eV.

Density functional simulations of Sb-rich GeSbTe phase change alloys

Science.gov (United States)

Gabardi, S.; Caravati, S.; Bernasconi, M.; Parrinello, M.

2012-09-01

We generated models of the amorphous phase of Sb-rich GeSbTe phase change alloys by quenching from the melt within density functional molecular dynamics. We considered the two compositions Ge1Sb1Te1 and Ge2Sb4Te5. Comparison with previous results on the most studied Ge2Sb2Te5 allowed us to draw some conclusions on the dependence of the structural properties of the amorphous phase on the alloy composition. Vibrational and electronic properties were also scrutinized. Phonons at high frequencies above 200 cm-1 are localized in tetrahedra around Ge atoms in Sb-rich compounds as well as in Ge2Sb2Te5. All compounds are semiconducting in the amorphous phase, with a band gap in the range 0.7-1.0 eV.

Solvothermal synthesis of graphene-Sb2S3 composite and the degradation activity under visible light

International Nuclear Information System (INIS)

Tao, Wenguang; Chang, Jiuli; Wu, Dapeng; Gao, Zhiyong; Duan, Xiaoli; Xu, Fang; Jiang, Kai

2013-01-01

Graphical abstract: Display Omitted Highlights: ► Graphene-Sb 2 S 3 composites were synthesized through a facile solvothermal method. ► Hydroxyl radicals are the main species responsible for the photodegradation activity. ► Graphene-Sb 2 S 3 demonstrated dramatically improved visible light degradation activity. -- Abstract: Novel graphene-Sb 2 S 3 (G-Sb 2 S 3 ) composites were synthesized via a facile solvothermal method with graphene oxide (GO), SbCl 3 and thiourea as the reactants. GO played an important role in controlling the size and the distribution of the formed Sb 2 S 3 nanoparticles on the graphene sheets with different density. Due to the negative surface charge, smaller Sb 2 S 3 particles size and efficient electrons transfer from Sb 2 S 3 to graphene, the composites demonstrated improved photodegradation activity on rhodamine B (RhB). Among these composites, the product G-Sb 2 S 3 0.1, which was synthesized with the GO concentration of 0.1 mg/mL, exhibited the highest photodegradation activity owing to the considerable density of Sb 2 S 3 nanoparticles onto graphene sheet free of aggregation. Hydroxyl radicals (·OH) derived from conduction band (CB) electrons of Sb 2 S 3 is suggested to be responsible for the photodegradation of RhB. The high visible light degradation activity and the satisfactory cycling stability made the as-prepared G-Sb 2 S 3 0.1 an applicable photocatalyst.

MBE growth and characterization of GaAs1-x Sb x epitaxial layers on Si (0 0 1) substrates

International Nuclear Information System (INIS)

Toda, T.; Nishino, F.; Kato, A.; Kambayashi, T.; Jinbo, Y.; Uchitomi, N.

2006-01-01

We investigated the growth of GaAs 1- x Sb x (x=1.0, 0.82, 0.69, 0.44, 0.0) layers on Si (0 0 1) substrates using AlSb as a buffer layer. Epilayers were grown as a function of As beam equivalent pressure (BEP) under a constant Sb BEP, and they were then characterized by atomic force microscopy (AFM), X-ray diffraction (XRD), and micro-Raman scattering analysis. We confirmed that GaAs 1- x Sb x layers have been successfully grown on Si substrates by introducing AlSb layers

4G/5G Polymorphism of the plasminogen activator inhibitor-1 gene is associated with multiple organ dysfunction in critically ill patients.

Science.gov (United States)

Huq, Muhammad Aminul; Takeyama, Naoshi; Harada, Makoto; Miki, Yasuo; Takeuchi, Akinori; Inoue, Sousuke; Nakagawa, Takashi; Kanou, Hideki; Hirakawa, Akihiko; Noguchi, Hiroshi

2012-01-01

Impaired fibrinolysis is associated with a higher incidence of both multiple organ dysfunction and mortality in the intensive care unit (ICU). Plasminogen activator inhibitor (PAI)-1 is the chief inhibitor of fibrinolysis. We investigated the influence of the 4G/5G polymorphism (rs1799768) of the PAI-1 gene on the plasma PAI-1 level and the outcome of critically ill patients. In 41 consecutive patients admitted to the ICU, PAI-1 gene polymorphism was assessed, plasma PAI-1 and arterial lactate concentrations were measured and clinical severity scores were recorded. Homozygotes for the 4G allele had higher plasma levels of PAI-1 antigen. The mean ± SD PAI-1 antigen level was 193.31 ± 167.93 ng/ml for the 4G/4G genotype, 100.67 ± 114.16 ng/ml for the 4G/5G genotype and 0.43 ± 0.53 ng/ml for the 5G/5G genotype. There was a significant correlation between plasma PAI-1 and arterial lactate concentrations, as well as between PAI-1 and severity scores. The mortality rate was 63, 33 and 0% for patients with the 4G/4G, 4G/5G and 5G/5G genotypes, respectively. These results demonstrate that the 4G/5G polymorphism of the PAI-1 gene affects the plasma PAI-1 concentration, which could impair fibrinolysis and cause organ failure, and thus the presence of the 4G allele increases the risk of death. Copyright © 2011 S. Karger AG, Basel.

Dissimilatory Sb(V) reduction by microorganisms isolated from Sb-contaminated sediment

Science.gov (United States)

Dovick, M. A.; Kulp, T. R.

2013-12-01

this isolate exhibited Sb(V)-dependent heterotrophic growth. These results suggest that the endogenous microbial community from this Sb-contaminated site includes anaerobic microorganisms capable of obtaining energy for growth by oxidizing heterotrophic electron donors using Sb(V) as the terminal electron acceptor. Ongoing work includes identification of the isolated organism using 16S rDNA phylogenetic markers as well as an inventory of known functional genes (e.g., arrA) within this isolate that may more typically encode for As(V)-reduction. These results elucidate the potentially significant role of microbiological transformations in controlling the speciation of Sb in the environment, and may help to identify potential bioremediation strategies for Sb contaminated waters.

The crystal structure of Cu9.1(1)TeSb3, a stuffed derivative of Cr3Si

DEFF Research Database (Denmark)

Søtofte, Inger; Makovicky, E.; Karup-Møller, Sven

1998-01-01

The intermetallic compound Cu9.1(1)TeSb3 prepared at 973 K is an ordered member of the solid solution Cu64Te31Sb5-Cu70Te8Sb22 which also exists, for more limited composition ranges, between 673 K and 1173 K. It is a stuffed derivative of the structure type A15 (Cr3Si). Te is surrounded by twelve 3....../4-occupied Cu-positions in the vertices of a cubically-deformed icosahedron (Cu-Te = 2.614 Å) which itself is nested in an Sb-icosahedron (Cu-Sb = 2.777 Å (x2) and 2.603 Å). The Sb array corresponds to the Cr array in Cr3Si....

Density functional simulations of Sb-rich GeSbTe phase change alloys

OpenAIRE

Gabardi, S; Caravati, S; Bernasconi, M; Parrinello, M

2012-01-01

We generated models of the amorphous phase of Sb rich GeSbTe phase change alloys by quenching from the melt within density functional molecular dynamics. We considered the two compositions Ge 1Sb 1Te 1 and Ge 2Sb 4Te 5. Comparison with previous results on the most studied Ge 2Sb 2Te 5 allowed us to draw some conclusions on the dependence of the structural properties of the amorphous phase on the alloy composition. Vibrational and electronic properties were also scrutinized. Phonons at high fr...

TRAC-PF1 MOD1 post test calculations of the OECD LOFT Experiment LP-SB-1

International Nuclear Information System (INIS)

Allen, E.J.

1990-04-01

Analysis of the small, hot leg break, OECD LOFT Experiment LP-SB-1. using the ''best-estimate'' computer code TRAC-PF1/MOD1 is presented. Descriptions of the LOFT facility and the LP-SB-1 experiment are given and development of the TRAC-PF1/MOD1 input model is detailed. The calculations performed in achieving the steady state conditions, from which the experiment was initiated, and the specification of experimental boundary conditions are outlined. 24 refs., 66 figs., 12 tabs

Peripheral Injection of SB203580 Inhibits the Inflammatory-Dependent Synthesis of Proinflammatory Cytokines in the Hypothalamus

Directory of Open Access Journals (Sweden)

Andrzej P. Herman

2014-01-01

Full Text Available The study was designed to determine the effects of peripheral injection of SB203580 on the synthesis of interleukin- (IL- 1β, IL-6, and tumor necrosis factor (TNF α in the hypothalamus of ewes during prolonged inflammation. Inflammation was induced by the administration of lipopolysaccharide (LPS (400 ng/kg over 7 days. SB203580 is a selective ATP-competitive inhibitor of the p38 mitogen-activated protein kinase (MAPK, which is involved in the regulation of proinflammatory cytokines IL-1β, IL-6 and TNFα synthesis. Intravenous injection of SB203580 successfully inhibited (P<0.01 synthesis of IL-1β and reduced (P<0.01 the production of IL-6 in the hypothalamus. The p38 MAPK inhibitor decreased (P<0.01 gene expression of TNFα but its effect was not observed at the level of TNFα protein synthesis. SB203580 also reduced (P<0.01 LPS-stimulated IL-1 receptor type 1 gene expression. The conclusion that inhibition of p38 MAPK blocks LPS-induced proinflammatory cytokine synthesis seems to initiate new perspectives in the treatment of chronic inflammatory diseases also within the central nervous system. However, potential proinflammatory effects of SB203580 treatment suggest that all therapies using p38 MAPK inhibitors should be introduced very carefully with analysis of all expected and unexpected consequences of treatment.

Growth and characterization of an InSb infrared photoconductor on Si via an AlSb/GaSb buffer

Science.gov (United States)

Jia, Bo Wen; Tan, Kian Hua; Loke, Wan Khai; Wicaksono, Satrio; Yoon, Soon Fatt

2018-05-01

A 99.6% relaxed InSb layer is grown on a 6° offcut (1 0 0) Si substrate via an AlSb/GaSb buffer using molecular beam epitaxy (MBE). A 200 nm GaSb buffer is first grown on Si and the lattice mismatch between them is accommodated by an interfacial misfit (IMF) array consisting of uniformly distributed 90° misfit dislocations. Si delta doping is introduced during the growth of GaSb to reduce the density of threading dislocation. Subsequently, a 50 nm AlSb buffer is grown followed by a 0.8 μm InSb layer. The InSb layer exhibits a 300 K electron mobility of 22,300 cm2/Vs. An InSb photoconductor on Si is demonstrated with a photoconductive gain from 77 K to 200 K under a 700 °C maintained blackbody.

Crystal growth and characterization of bulk Sb2Te3 topological insulator

Science.gov (United States)

Sultana, Rabia; Gurjar, Ganesh; Patnaik, S.; Awana, V. P. S.

2018-04-01

The Sb2Te3 crystals are grown using the conventional self flux method via solid state reaction route, by melting constituent elements (Sb and Te) at high temperature (850 °C), followed by slow cooling (2 °C/h). As grown Sb2Te3 crystals are analysed for various physical properties by x-ray diffraction (XRD), Raman Spectroscopy, Scanning Electron Microscopy (SEM) coupled with Energy Dispersive x-ray Spectroscopy (EDAX) and electrical measurements under magnetic field (6 Tesla) down to low temperature (2.5 K). The XRD pattern revealed the growth of synthesized Sb2Te3 sample along (00l) plane, whereas the SEM along with EDAX measurements displayed the layered structure with near stoichiometric composition, without foreign contamination. The Raman scattering studies displayed known ({{{{A}}}1{{g}}}1, {{{{E}}}{{g}}}2 and {{{{A}}}1{{g}}}2) vibrational modes for the studied Sb2Te3. The temperature dependent electrical resistivity measurements illustrated the metallic nature of the as grown Sb2Te3 single crystal. Further, the magneto—transport studies represented linear positive magneto-resistance (MR) reaching up to 80% at 2.5 K under an applied field of 6 Tesla. The weak anti localization (WAL) related low field (±2 Tesla) magneto-conductance at low temperatures (2.5 K and 20 K) has been analysed and discussed using the Hikami—Larkin—Nagaoka (HLN) model. Summarily, the short letter reports an easy and versatile method for crystal growth of bulk Sb2Te3 topological insulator (TI) and its brief physical property characterization.

Electrochemical studies of CNT/Si–SnSb nanoparticles for lithium ion batteries

Energy Technology Data Exchange (ETDEWEB)

Nithyadharseni, P. [Department of Physics, Bannari Amman Institute of Technology, Sathyamangalam 638402 (India); Department of Physics, Advanced Batteries Lab, National University of Singapore, 117542 (Singapore); Reddy, M.V., E-mail: phymvvr@nus.edu.sg [Department of Physics, Advanced Batteries Lab, National University of Singapore, 117542 (Singapore); Nalini, B., E-mail: lalin99@rediffmail.com [Department of Physics, Avinashilingam University for Women, Coimbatore 641043 (India); Ravindran, T.R. [Centre for Research in Nanotechnology, Karunya University, Coimbatore 641114 (India); Pillai, B.C.; Kalpana, M. [Indira Gandhi Centre for Atomic Research (IGCAR), Kalpakkam 603102 (India); Chowdari, B.V.R. [Department of Physics, Advanced Batteries Lab, National University of Singapore, 117542 (Singapore)

2015-10-15

Highlights: • Si added SnSb and CNT exhibits very low particle size of below 30 nm • A strong PL quenching due to the addition of Si to SnSb. • Electrochemical studies show CNT added SnSb shows good capacity retention. - Abstract: Nano-structured SnSb, SnSb–CNT, Si–SnSb and Si–SnSb–CNT alloys were synthesized from metal chlorides of Sn, Sb and Si via reductive co-precipitation technique using NaBH{sub 4} as reducing agent. The as prepared compounds were characterized by various techniques such as X-ray diffraction (XRD), scanning electron microscope (SEM), Raman, Fourier transform infra-red (FTIR) and photoluminescence (PL) spectroscopy. The electrochemical performances of the compounds were characterized by galvanostatic cycling (GC) and cyclic voltammetry (CV). The Si–SnSb–CNT compound shows a high reversible capacity of 1200 mAh g{sup −1}. However, the rapid capacity fading was observed during cycling. In contrast, SnSb–CNT compound showed a high reversible capacity of 568 mAh g{sup −1} at 30th cycles with good cycling stability. The improved reversible capacity and cyclic performance of the SnSb–CNT compound could be attributed to the nanosacle dimension of SnSb particles and the structural advantage of CNTs.

Breakdown of the quantum Hall effect in InAs/AlSb quantum wells due to counterflowing edge channels

NARCIS (Netherlands)

Wees, B.J. van; Meijer, G.I.; Kuipers, J.J.; Klapwijk, T.M.; Graaf, W. van de; Borghs, G.

1995-01-01

We investigated magnetotransport in the two-dimensional electron gas (2DEG) present in InAs/AlSb quantum wells. The filling factor Ng underneath a gate electrode was reduced relative to the bulk filling factor Nb. For Ng

Introgression of the SbASR-1 Gene Cloned from a Halophyte Salicornia brachiata Enhances Salinity and Drought Endurance in Transgenic Groundnut (Arachis hypogaea) and Acts as a Transcription Factor

Science.gov (United States)

Tiwari, Vivekanand; Chaturvedi, Amit Kumar; Mishra, Avinash; Jha, Bhavanath

2015-01-01

The SbASR-1 gene, cloned from a halophyte Salicornia brachiata, encodes a plant-specific hydrophilic and stress responsive protein. The genome of S. brachiata has two paralogs of the SbASR-1 gene (2549 bp), which is comprised of a single intron of 1611 bp, the largest intron of the  abscisic acid stress ripening [ASR] gene family yet reported. In silico analysis of the 843-bp putative promoter revealed the presence of ABA, biotic stress, dehydration, phytohormone, salinity, and sugar responsive cis-regulatory motifs. The SbASR-1 protein belongs to Group 7 LEA protein family with different amino acid composition compared to their glycophytic homologs. Bipartite Nuclear Localization Signal (NLS) was found on the C-terminal end of protein and localization study confirmed that SbASR-1 is a nuclear protein. Furthermore, transgenic groundnut (Arachis hypogaea) plants over-expressing the SbASR-1 gene constitutively showed enhanced salinity and drought stress tolerance in the T1 generation. Leaves of transgenic lines exhibited higher chlorophyll and relative water contents and lower electrolyte leakage, malondialdehyde content, proline, sugars, and starch accumulation under stress treatments than wild-type (Wt) plants. Also, lower accumulation of H2O2 and O2.- radicals was detected in transgenic lines compared to Wt plants under stress conditions. Transcript expression of APX (ascorbate peroxidase) and CAT (catalase) genes were higher in Wt plants, whereas the SOD (superoxide dismutase) transcripts were higher in transgenic lines under stress. Electrophoretic mobility shift assay (EMSA) confirmed that the SbASR-1 protein binds at the consensus sequence (C/G/A)(G/T)CC(C/G)(C/G/A)(A/T). Based on results of the present study, it may be concluded that SbASR-1 enhances the salinity and drought stress tolerance in transgenic groundnut by functioning as a LEA (late embryogenesis abundant) protein and a transcription factor. PMID:26158616

Hole-dominated transport in InSb nanowires grown on high-quality InSb films

Energy Technology Data Exchange (ETDEWEB)

Algarni, Zaina; George, David; Singh, Abhay; Lin, Yuankun; Philipose, U., E-mail: usha.philipose@unt.edu [University of North Texas, Department of Physics (United States)

2016-12-15

We have developed an effective strategy for synthesizing p-type indium antimonide (InSb) nanowires on a thin film of InSb grown on glass substrate. The InSb films were grown by a chemical reaction between Sb{sub 2}S{sub 3} and In and were characterized by structural, compositional, and optical studies. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) studies reveal that the surface of the substrate is covered with a polycrystalline InSb film comprised of sub-micron sized InSb islands. Energy dispersive X-ray (EDX) results show that the film is stoichiometric InSb. The optical constants of the InSb film, characterized using a variable-angle spectroscopic ellipsometer (VASE) shows a maximum value for refractive index at 3.7 near 1.8 eV, and the extinction coefficient (k) shows a maximum value 3.3 near 4.1 eV. InSb nanowires were subsequently grown on the InSb film with 20 nm sized Au nanoparticles functioning as the metal catalyst initiating nanowire growth. The InSb nanowires with diameters in the range of 40–60 nm exhibit good crystallinity and were found to be rich in Sb. High concentrations of anions in binary semiconductors are known to introduce acceptor levels within the band gap. This un-intentional doping of the InSb nanowire resulting in hole-dominated transport in the nanowires is demonstrated by the fabrication of a p-channel nanowire field effect transistor. The hole concentration and field effect mobility are estimated to be ≈1.3 × 10{sup 17} cm{sup −3} and 1000 cm{sup 2} V{sup −1} s{sup −1}, respectively, at room temperature, values that are particularly attractive for the technological implications of utilizing p-InSb nanowires in CMOS electronics.

Yolk-shell structured Sb@C anodes for high energy Na-ion batteries

Energy Technology Data Exchange (ETDEWEB)

Song, Junhua; Yan, Pengfei; Luo, Langli; Qi, Xingguo; Rong, Xiaohui; Zheng, Jianming; Xiao, Biwei; Feng, Shuo; Wang, Chongmin; Hu, Yong-Sheng; Lin, Yuehe; Sprenkle, Vincent L.; Li, Xiaolin

2017-10-01

Despite great advances in sodium-ion battery developments, the search for high energy and stable anode materials remains a challenge. Alloy or conversion-typed anode materials are attractive candidates of high specific capacity and low voltage potential, yet their applications are hampered by the large volume expansion and hence poor electrochemical reversibility and fast capacity fade. Here, we use antimony (Sb) as an example to demonstrate the use of yolk-shell structured anodes for high energy Na-ion batteries. The Sb@C yolk-shell structure prepared by controlled reduction and selective removal of Sb2O3 from carbon coated Sb2O3 nanoparticles can accommodate the Sb swelling upon sodiation and improve the structural/electrical integrity against pulverization. It delivers a high specific capacity of ~554 mAh•g-1, good rate capability (315 mhA•g-1 at 10C rate) and long cyclability (92% capacity retention over 200 cycles). Full-cells of O3-Na0.9[Cu0.22Fe0.30Mn0.48]O2 cathodes and Sb@C-hard carbon composite anodes demonstrate a high specific energy of ~130 Wh•kg-1 (based on the total mass of cathode and anode) in the voltage range of 2.0-4.0 V, ~1.5 times energy of full-cells with similar design using hard carbon anodes.

Influence of PAI-1 gene promoter-675 (4G/5G) polymorphism on fibrinolytic activity after cardiac surgery employing cardiopulmonary bypass.

Science.gov (United States)

Ozolina, Agnese; Strike, Eva; Jaunalksne, Inta; Serova, Jelena; Romanova, Tatjana; Zake, Liene Nikitina; Sabelnikovs, Olegs; Vanags, Indulis

2012-01-01

The plasminogen activator inhibitor type-1 (PAI-1) gene promoter contains 675 (4G/5G) polymorphism. The aim of this study was evaluate the effect of the PAI-1 promoter-675 (4G/5G) polymorphism on the concentrations of PAI-1 and tissue plasminogen activator/PAI-1 (t-PA/PAI-1) complex and bleeding volume after on-pump cardiac surgery. A total of 90 patients were included in the study at Pauls Stradins Clinical University Hospital. Seven patients were excluded due to surgical bleeding. Eighty-three patients were classified according to the PAI-1 genotype: 21 patients had the 4G/4G genotype; 42, the 4G/5G genotype; and 20, the 5G/5G genotype. The following fibrinolysis parameters were recorded: the PAI-1 level preoperatively, D-dimer level at 0, 6, and 24 hours after surgery, and t-PA/PAI-1 complex level 24 hours postoperatively. A postoperative bleeding volume was registered in mL 24 hours after surgery. The patients with the 5G/5G genotype had significantly lower preoperative PAI-1 levels (17 [SD, 10.8] vs. 24 ng/mL [SD, 9.6], P=0.04), higher D-dimer levels at 6 hours (371 [SD, 226] vs. 232 ng/mL [SD, 185], P=0.03) and 24 hours (326 [SD, 207] vs. 209 ng/mL [SD, 160], P=0.04), and greater postoperative blood loss (568 [SD, 192] vs. 432 mL [168], P=0.02) compared with the 4G/4G carriers. There were no significant differences in the levels of the t-PA/PAI-1 complex comparing different genotype groups. The carriers of the 5G/5G genotype showed the lower preoperative PAI-1 levels, greater chest tube blood loss, and higher D-dimer levels indicating that the 5G/5G carriers may have enhanced fibrinolysis.

Ionothermal Synthesis, Structure, and Bonding of the Catena -Heteropolycation 1 ∞ [Sb 2 Se 2 ] +

KAUST Repository

Groh, Matthias F.

2015-01-26

The reaction of antimony and selenium in the Lewis-acidic ionic liquid 1-butyl-3-methyl-imidazolium tetrachloridoaluminate, [BMIm]Cl•4.7AlCl3, yielded dark-red crystals of [Sb2Se2]AlCl4. The formation starts above 160 ° C; at about 190 ° C, irreversible decomposition takes place. The compound crystallizes in the triclinic space group P 1¯ with a = 919.39(2) pm, b = 1137.92(3) pm, c = 1152.30(3) pm, α = 68.047(1)° , β = 78.115(1)° , γ = 72.530(1)° , and Z = 4. The structure is similar to that of [Sb2Te2]AlCl4 but has only half the number of crystallographically independent atoms. Polycationic chains 1∞ [Sb2Se2]+ form a pseudo-hexagonal arrangement along [011¯] ], which is interlaced by tetrahedral AlCl4 - groups. The catena-heteropolycation 1∞ [Sb2Se2]+ is a sequence of three different four-membered [Sb2Se2 ] rings. The chemical bonding scheme, established from the topological analysis of the real-space bonding indicator ELI-D, includes significantly polar covalent bonding in four-member rings withinthepolycation.Theringsareconnectedintoaninfinitechainbyhomonuclear non-polar Sb-Sb bonds and highly polar Sb-Se bonds. Half of the selenium atoms are three-bonded.

Effect of sulfur passivation of InSb (0 0 1) substrates on molecular-beam homoepitaxy

Energy Technology Data Exchange (ETDEWEB)

Solov’ev, V.A., E-mail: vasol@beam.ioffe.ru; Sedova, I.V.; Lvova, T.V.; Lebedev, M.V.; Dement’ev, P.A.; Sitnikova, A.A.; Semenov, A.N.; Ivanov, S.V.

2015-11-30

Highlights: • Treatment of InSb (0 0 1) substrate with 1 M aqueous Na{sub 2}S solution results in nearly complete removal of native oxides. • A sulfide protective layer formed by the S-treatment is desorbed at much lower temperatures than the native oxide layer. • The bulk InSb epilayers grown on the S-treated substrates have very smooth surface (RMS ∼0.1 nm). • Good structural quality of the homointerfaces formed at the S-treated substrates is confirmed by TEM. - Abstract: The aqueous sodium sulfide solution has been used for pre-epitaxial preparation of epi-ready InSb (0 0 1) substrates for molecular beam epitaxy (MBE) of InSb layers. X-ray photoemission spectroscopy study shows that the S-treated surface of InSb (0 0 1) substrate generally does not contain a native oxide layer and is covered with a sulfide protecting overlayer. Atomic-force microscopy and transmission electron microscopy have been applied to compare surface topography and structural properties of InSb layers grown by MBE on S-treated and untreated epi-ready InSb (0 0 1) substrates. The MBE growth of InSb layers with very smooth surface possessing the root-mean-square roughness as low as 0.1 nm and good structural quality has been demonstrated on the S-treated substrates.

Graphene supported Sn-Sb rate at carbon core-shell particles as a superior anode for lithium ion batteries

Energy Technology Data Exchange (ETDEWEB)

Chen, Shuangqiang; Chen, Peng; Wang, Yong [Department of Chemical Engineering, School of Environmental and Chemical Engineering, Shanghai University (China); Wu, Minghong; Pan, Dengyu [Institute of Nanochemistry and Nanobiology, Shanghai Univ. (China)

2010-10-15

This paper reports the preparation and Li-storage properties of graphene nanosheets(GNS), GNS supported Sn-Sb rate at carbon (50-150 nm) and Sn-Sb nanoparticles (5-10 nm). The best cycling performance and excellent high rate capabilities were observed for GNS-supported Sn-Sb rate at carbon core-shell particles, which exhibited initial capacities of 978, 850 and 668 mAh/g respectively at 0.1C, 2C and 5C (1C = 800 mA/g) with good cyclability. Besides the GNS support, the carbon skin around Sn-Sb particles is believed to be a key factor to improve electrochemical properties of Sn-Sb. (author)

Syntheses, and crystal and electronic structures of the new Zintl phases Na2ACdSb2 and K2ACdSb2 (A=Ca, Sr, Ba, Eu, Yb): Structural relationship with Yb2CdSb2 and the solid solutions Sr2-xAxCdSb2, Ba2-xAxCdSb2 and Eu2-xYbxCdSb2

International Nuclear Information System (INIS)

Saparov, Bayrammurad; Saito, Maia; Bobev, Svilen

2011-01-01

Presented are the details of the syntheses, crystal and electronic structures of a new family of Zintl phases Na 2 ACdSb 2 and K 2 ACdSb 2 (A=Ca, Sr, Ba, Eu, Yb), as well as the solid solutions Sr 2-x A x CdSb 2 , Ba 2-x A x CdSb 2 and Eu 2-x Yb x CdSb 2 . The structures of Na 2 ACdSb 2 and K 2 ACdSb 2 (A=Ca, Sr, Ba, Eu, Yb) were determined to be of a new type with the non-centrosymmetric space group Pmc2 1 (no. 26), Pearson symbol oP12, with lattice parameters a=4.684(1)-4.788(1) A; b=9.099(3)-9.117(2) A; c=7.837(1)-8.057(2) A for the Na 2 ACdSb 2 series, and a=4.6637(9)-5.0368(8) A; b=9.100(2)-9.8183(15) A; and c=7.7954(15)-8.4924(13) A for K 2 ACdSb 2 , respectively. The solid solutions Sr 2-x A x CdSb 2 , Ba 2-x A x CdSb 2 and Eu 2-x Yb x CdSb 2 (x∼1) are isostructural and isoelectronic to the recently reported Yb 2 CdSb 2 (space group Cmc2 1 (no. 36), Pearson symbol cP20). All discussed structures are based upon CdSb 2 4- polyanionic layers, similar to the ones observed in Yb 2 CdSb 2 , with various alkali- and/or alkaline-earth cations coordinated to them. Magnetic susceptibility and Seebeck coefficient measurements on selected Eu 2-x Yb x CdSb 2 samples, taken at low temperatures up to 300 K, are also reported. -- Graphical abstract: The quaternary Zintl phases Na 2 ACdSb 2 and K 2 ACdSb 2 (A=Ca, Sr, Ba, Eu, Yb) with novel layered structures have been synthesized for the first time and structurally characterized by single-crystal X-ray diffraction. Reported as well are the results from crystallographic and property studies of the closely related solid solutions Sr 2-x A x CdSb 2 , Ba 2-x A x CdSb 2 (x∼1), and Eu 2-x Yb x CdSb 2 (1 2 ACdSb 2 and K 2 ACdSb 2 (A=Ca, Sr, Ba, Eu, Yb) are new quaternary Zintl phases. → Sr 2-x A x CdSb 2 , Ba 2-x A x CdSb 2 (x∼1), and Eu 2-x Yb x CdSb 2 (1 4 tetrahedra. → Eu 2-x Yb x CdSb 2 (1< x<2) exhibit high Seebeck coefficient (217 μV/K at RT).

Hole-dominated transport in InSb nanowires grown on high-quality InSb films

Science.gov (United States)

Algarni, Zaina; George, David; Singh, Abhay; Lin, Yuankun; Philipose, U.

2016-12-01

We have developed an effective strategy for synthesizing p-type indium antimonide (InSb) nanowires on a thin film of InSb grown on glass substrate. The InSb films were grown by a chemical reaction between S b 2 S 3 and I n and were characterized by structural, compositional, and optical studies. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) studies reveal that the surface of the substrate is covered with a polycrystalline InSb film comprised of sub-micron sized InSb islands. Energy dispersive X-ray (EDX) results show that the film is stoichiometric InSb. The optical constants of the InSb film, characterized using a variable-angle spectroscopic ellipsometer (VASE) shows a maximum value for refractive index at 3.7 near 1.8 eV, and the extinction coefficient (k) shows a maximum value 3.3 near 4.1 eV. InSb nanowires were subsequently grown on the InSb film with 20 nm sized Au nanoparticles functioning as the metal catalyst initiating nanowire growth. The InSb nanowires with diameters in the range of 40-60 nm exhibit good crystallinity and were found to be rich in Sb. High concentrations of anions in binary semiconductors are known to introduce acceptor levels within the band gap. This un-intentional doping of the InSb nanowire resulting in hole-dominated transport in the nanowires is demonstrated by the fabrication of a p-channel nanowire field effect transistor. The hole concentration and field effect mobility are estimated to be ≈1.3 × 1017 cm-3 and 1000 cm2 V-1 s-1, respectively, at room temperature, values that are particularly attractive for the technological implications of utilizing p-InSb nanowires in CMOS electronics.

Spatial organization of NG2 glial cells and astrocytes in rat hippocampal CA1 region.

Science.gov (United States)

Xu, Guangjin; Wang, Wei; Zhou, Min

2014-04-01

Similar to astrocytes, NG2 glial cells are uniformly distributed in the central nervous system (CNS). However, little is known about the interspatial relationship, nor the functional interactions between these two star-shaped glial subtypes. Confocal morphometric analysis showed that NG2 immunostained cells are spatially organized as domains in rat hippocampal CA1 region and that each NG2 glial domain occupies a spatial volume of ∼178, 364 μm(3) . The processes of NG2 glia and astrocytes overlap extensively; each NG2 glial domain interlaces with the processes deriving from 5.8 ± 0.4 neighboring astrocytes, while each astrocytic domain accommodates processes stemming from 4.5 ± 0.3 abutting NG2 glia. In CA1 stratum radiatum, the cell bodies of morphologically identified glial cells often appear to make direct somatic-somata contact, termed as doublets. We used dual patch recording and postrecording NG2/GFAP double staining to determine the glial identities of these doublets. We show that among 44 doublets, 50% were NG2 glia-astrocyte pairs, while another 38.6% and 11.4% were astrocyte-astrocyte and NG2 glia-NG2 glia pairs, respectively. In dual patch recording, neither electrical coupling nor intercellular biocytin transfer was detected in astrocyte-NG2 glia or NG2 glia-NG2 glia doublets. Altogether, although NG2 glia and astrocytes are not gap junction coupled, their cell bodies and processes are interwoven extensively. The anatomical and physiological relationships revealed in this study should facilitate future studies to understand the metabolic coupling and functional communication between NG2 glia and astrocytes. Copyright © 2013 Wiley Periodicals, Inc.

Polaronic transport and thermoelectricity in Fe1 -xCoxSb2S4 (x =0 , 0.1, and 0.2)

Science.gov (United States)

Liu, Yu; Kang, Chang-Jong; Stavitski, Eli; Du, Qianheng; Attenkofer, Klaus; Kotliar, G.; Petrovic, C.

2018-04-01

We report a study of Co-doped berthierite Fe1 -xCoxSb2S4 (x =0 , 0.1, and 0.2). The alloy series of Fe1 -xCoxSb2S4 crystallize in an orthorhombic structure with the Pnma space group, similar to FeSb2, and show semiconducting behavior. The large discrepancy between activation energy for conductivity, Eρ (146 ˜270 meV ), and thermopower, ES (47 ˜108 meV ), indicates the polaronic transport mechanism. Bulk magnetization and heat-capacity measurements of pure FeSb2S4 (x =0 ) exhibit a broad antiferromagnetic transition (TN=46 K ) followed by an additional weak transition (T*=50 K ). Transition temperatures (TN and T*) slightly decrease with increasing Co content x . This is also reflected in the thermal conductivity measurement, indicating strong spin-lattice coupling. Fe1 -xCoxSb2S4 shows relatively high value of thermopower (up to ˜624 μ V K-1 at 300 K) and thermal conductivity much lower when compared to FeSb2, a feature desired for potential applications based on FeSb2 materials.

Limiting scattering processes in high-mobility InSb quantum wells grown on GaSb buffer systems

Science.gov (United States)

Lehner, Ch. A.; Tschirky, T.; Ihn, T.; Dietsche, W.; Keller, J.; Fält, S.; Wegscheider, W.

2018-05-01

We present molecular beam epitaxial grown single- and double-side δ -doped InAlSb/InSb quantum wells with varying distances down to 50 nm to the surface on GaSb metamorphic buffers. We analyze the surface morphology as well as the impact of the crystalline quality on the electron transport. Comparing growth on GaSb and GaAs substrates indicates that the structural integrity of our InSb quantum wells is solely determined by the growth conditions at the GaSb/InAlSb transition and the InAlSb barrier growth. The two-dimensional electron gas samples show high mobilities of up to 349 000 cm2/Vs at cryogenic temperatures and 58 000 cm2/Vs at room temperature. With the calculated Dingle ratio and a transport lifetime model, ionized impurities predominantly remote from the quantum well are identified as the dominant source of scattering events. The analysis of the well-pronounced Shubnikov-de Haas oscillations reveals a high spin-orbit coupling with an effective g -factor of -38.4 in our samples. Along with the smooth surfaces and long mean free paths demonstrated, our InSb quantum wells are increasingly competitive for nanoscale implementations of Majorana mode devices.

Structural and electrical properties of high-quality 0.41 μm-thick InSb films grown on GaAs (1 0 0) substrate with InxAl1−xSb continuously graded buffer

International Nuclear Information System (INIS)

Shin, Sang Hoon; Song, Jin Dong; Lim, Ju Young; Koo, Hyun Cheol; Kim, Tae Geun

2012-01-01

High-quality InSb was grown on a GaAs (1 0 0) substrate with an InAlSb continuously graded buffer (CGB). The temperatures of In, Al K-cells and substrate were modified during the growth of InAlSb CGB. The cross-section TEM image reveals that the defects due to lattice-mismatch disappear near lateral structures in CGB. The measured electron mobility of 0.41 μm-thick InSb was 46,300 cm 2 /Vs at 300 K. These data surpass the electron mobility of state-of-the-art InSb grown by other methods with similar thickness of InSb.

Smooth interface effects on the confinement properties of GaSb/Al xGa 1- xSb quantum wells

Science.gov (United States)

Adib, Artur B.; de Sousa, Jeanlex S.; Farias, Gil A.; Freire, Valder N.

2000-10-01

A theoretical investigation on the confinement properties of GaSb/Al xGa 1- xSb single quantum wells (QWs) with smooth interfaces is performed. Error function ( erf)-like interfacial aluminum molar fraction variations in the QWs, from which it is possible to obtain the carriers effective masses and confinement potential profiles, are assumed. It is shown that the existence of smooth interfaces blue shifts considerably the confined carriers and exciton energies, an effect which is stronger in thin QWs.

Structural and physical properties of Mg3-xZnxSb2 (x=0-1.34)

International Nuclear Information System (INIS)

Ahmadpour, Faraz; Kolodiazhnyi, Taras; Mozharivskyj, Yurij

2007-01-01

The Mg 3-x Zn x Sb 2 phases with x=0-1.34 were prepared by direct reactions of the elements in tantalum tubes. According to the X-ray single crystal and powder diffraction, the Mg 3-x Zn x Sb 2 phases crystallize in the same P3-bar m1 space group as the parent Mg 3 Sb 2 phase. The Mg 3-x Zn x Sb 2 structure is different from the other substituted structures of Mg 3 Sb 2 , such as (Ca, Sr, Ba) Mg 2 Sb 2 or Mg 5.23 Sm 0.77 Sb 4 , in a way that in Mg 3-x Zn x Sb 2 the Mg atoms on the tetrahedral sites are replaced, while in the other structures Mg on the octahedral sites is replaced. Thermoelectric performance for the two members of the series, Mg 3 Sb 2 and Mg 2.36 Zn 0.64 Sb 2 , was evaluated from low to room temperatures through resistivity, Seebeck coefficient and thermal conductivity measurements. In contrast to Mg 3 Sb 2 which is a semiconductor, Mg 2.36 Zn 0.64 Sb 2 is metallic and exhibits an 18-times larger dimensionless figure-of-merit, ZT, at room temperature. However, thermoelectric performance of Mg 2.36 Zn 0.64 Sb 2 is still poor and it is mostly due to its large electrical resistivity. - Graphical abstract: The Mg atoms in Mg 3 Sb 2 were successfully substituted with Zn, with Zn going exclusively into the tetrahedral sites. Zn substitution increases the electrical conductivity in Mg 2.36 Zn 0.64 Sb 2 by closing the band gap. This change combined with a decrease in the thermal conductivity improves the ZT value

Trace and minor elements in four commercial honey brands

International Nuclear Information System (INIS)

Iskander, F.Y.

1995-01-01

Instrumental neutron activation analysis was used to measure the concentrations of 24 elements in four honey brands commercially available in Austin, Texas (USA). The measured elements (and concentration) were: As, (<30 ng/g); Ba, (<2 μg/g); Br, (0.24-0.49 μg/g); Ce, (<20 ng/g); Co, (9-180 ng/g); Cr, (37-64 ng/g); Cs, (<3-45 ng/g); Fe, (<4-15.9 μg/g); Hf, (<3 ng/g); Hg, (1 ng/g); K, (91-230 μg/g); La, (<4 ng/g); Na, (20.3-25.3 μg/g); Ni, (0.39-0.77 μg/g); Rb, (68-340 ng/g); Sb, (13-61 ng/g); Sc, (<0.3-200 ng/g); Se, (<20 ng/g); Sm, (<9 ng/g); Sr, (<2 ng/g); Th, (<4 ng/g); U, (<30 ng/g); Zn, (3.36-4.61 μg/g); and Zr, (<0.5-0.84 μg/g). The results obtained were compared to the concentration of the same elements in honey produced or commercially available in Turkey, Mexico, El-Salvador, China, Czechoslovakia and Yugoslavia. (author). 10 refs., 1 tab

Antimony speciation analysis in sediment reference materials using high-performance liquid chromatography coupled to hydride generation atomic fluorescence spectrometry

International Nuclear Information System (INIS)

Potin-Gautier, M.; Pannier, F.; Quiroz, W.; Pinochet, H.; Gregori, I. de

2005-01-01

This work presents the development of suitable methodologies for determination of the speciation of antimony in sediment reference samples. Liquid chromatography with a post-column photo-oxidation step and hydride generation atomic fluorescence spectrometry as detection system is applied to the separation and determination of Sb(III), Sb(V) and trimethylantimony species. Post-column decomposition and hydride generation steps were studied for sensitive detection with the AFS detector. This method was applied to investigate the conditions under which speciation analysis of antimony in sediment samples can be carried out. Stability studies of Sb species during the extraction processes of solid matrices, using different reagents solutions, were performed. Results demonstrate that for the extraction yield and the stability of Sb species in different marine sediment extracts, citric acid in ascorbic acid medium was the best extracting solution for antimony speciation analysis in this matrix (between 55% and 65% of total Sb was recovered from CRMs, Sb(III) being the predominant species). The developed method allows the separation of the three compounds within 6 min with detection limits of 30 ng g -1 for Sb(III) and TMSbCl2 and 40 ng g -1 for Sb(V) in sediment samples

Distribution, speciation and availability of antimony (Sb) in soils and terrestrial plants from an active Sb mining area

International Nuclear Information System (INIS)

Okkenhaug, Gudny; Zhu Yongguan; Luo Lei; Lei Ming; Li Xi; Mulder, Jan

2011-01-01

Here, we present one of the first studies investigating the mobility, solubility and the speciation-dependent in-situ bioaccumulation of antimony (Sb) in an active Sb mining area (Xikuangshan, China). Total Sb concentrations in soils are high (527-11,798 mg kg -1 ), and all soils, including those taken from a paddy field and a vegetable garden, show a high bioavailable Sb fraction (6.3-748 mg kg -1 ), dominated by Sb(V). Elevated concentrations in native plant species (109-4029 mg kg -1 ) underpin this. Both chemical equilibrium studies and XANES data suggest the presence of Ca[Sb(OH) 6 ] 2 , controlling Sb solubility. A very close relationship was found between the citric acid extractable Sb in plants and water or sulfate extractable Sb in soil, indicating that citric acid extractable Sb content in plants may be a better predictor for bioavailable Sb in soil than total acid digestible Sb plant content. - Highlights: → Antimony (Sb) in soils from an active Sb mining area is highly bioavailable. → Sb occurs mainly as Sb(V) in Sb mining impacted soils and plants. → Sb solubility in Sb mining impacted soils is governed by Ca[Sb(OH) 6 ] 2 . → Citric acid extractable Sb in plants and bioavailable Sb in soils are strongly correlated. - Antimony (Sb) in soils from an active Sb mining area is highly bioavailable and controlled by the solubility of calcium antimonate.

One step hydrothermal synthesis of 3D CoS2@MoS2-NG for high performance supercapacitors.

Science.gov (United States)

Meng, Qi; Chen, Yizhi; Zhu, Wenkun; Zhang, Ling; Yang, Xiaoyong; Duan, Tao

2018-05-03

A three-dimensional (3D) MoS 2 coated CoS 2 -nitrogen doped graphene (NG) (CoS 2 @MoS 2 -NG) hybrid has been synthesized by a one step hydrothermal method as supercapacitor (SC) electrode material for the first time. Such a composite consists of NG embedded with stacked CoS 2 @MoS 2 sheets. With a 3D skeleton, it prevents the agglomeration of CoS 2 @MoS 2 nanoparticles, resulting in sound conductivity, rich porous structures and a large surface area. The results indicate that CoS 2 @MoS 2 -NG has higher specific capacitance (198 F g -1 at 1 A g -1 ), better rate performance (with about 56.57% from 1 to 16 A g -1 ) and an improved cycle stability (with about 96.97% after 1000 cycles). It is an ideal candidate for SC electrode materials.

Defect Structure of High-Temperature-Grown GaMnSb/GaSb

International Nuclear Information System (INIS)

Romanowski, P.; Bak-Misiuk, J.; Dynowska, E.; Domagala, J.Z.; Wojciechowski, T.; Jakiela, R.; Sadowski, J.; Barcz, A.; Caliebe, W.

2010-01-01

GaMnSb/GaSb(100) layers with embedded MnSb inclusions have been grown at 720 K using MBE technique. This paper presents the investigation of the defect structure of Ga1-xMnxSb layers with different content of manganese (up to x = 0.07). X-ray diffraction method using conventional and synchrotron radiation was applied. Dimensions and shapes of inclusions were detected by scanning electron microscopy. Depth profiles of elements were measured using secondary ion mass spectroscopy technique. (authors)

Determination of sub-ng g-1 levels of total inorganic arsenic and selenium in foods by hydride-generation atomic absorption spectrometry after pre-concentration.

Science.gov (United States)

Altunay, Nail; Gürkan, Ramazan

2017-03-01

A new and simple ultrasonic-assisted extraction (UAE) procedure was developed for the determination of inorganic arsenic and selenium in foods by hydride-generation atomic absorption spectrometry (HG-AAS). The various analytical variables affecting complex formation and extraction efficiency were investigated and optimised. The method is based on selective complex formation of As(III) and Se(IV) in the presence of excess As(V) and Se(VI) with toluidine red in the presence of tartaric acid at pH 4.5, and then extraction of the resulting condensation products into the micellar phase of non-ionic surfactant, polyethylene glycol dodecyl ether, Brij 35. Under optimised conditions, good linear relationships were obtained in the ranges of 4-225 and 12-400 ng l - 1 with limits of detection of 1.1 and 3.5 ng l - 1 for As(III) and Se(IV), respectively. The repeatability was better than 3.9% for both analytes (n = 10, 25 ng l - 1 ) while reproducibility ranged from 4.2% to 4.8%. The recoveries of As(III) and Se(IV) spiked at 25-100 ng l - 1 were in the range of 94.2-104.8%. After pre-concentration of a 5.0 ml sample, the sensitivity enhancement factors for As(III) and Se(IV) were 185 and 140, respectively. Accuracy was assessed by analysis of two standard reference materials (SRMs) and spiked recovery experiments. The method was successfully applied to the accurate and reliable determination of total As and total Se by HG-AAS after pre-reduction with a mixture of L-cysteine and tartaric acid. Finally, the method was shown to be rapid and sensitive, with good results for extraction, pre-concentration and determination of total As and Se contents (as As(III) and Se(IV)) from food samples.

Radiosynthesis of [11C]SB-705498, a selective transient receptor potential Vanilloid 1 (TRPV1) receptor antagonist

International Nuclear Information System (INIS)

Dolle, F.; Bramoulle, Y.; Deverre, J.R.; Bottlaender, M.; Passchier, J.

2011-01-01

Complete text of publication follows: Objectives: The transient receptor potential vanilloid 1 (TRPV1) receptor, previously known as the vanilloid receptor 1 (VR1), is a non-selective cation channel activated by a range of noxious stimuli and highly expressed in nociceptive fibres. TRPV1 receptor is involved in pain and sensitisation associated with tissue injury and inflammation and therefore represents a pharmacological target of choice for the development of novel therapeutic agents for the treatment of chronic pain, migraine and gastrointestinal disorders. Among a novel series of pyrrolidinyl ureas recently discovered by GSK, SB-705498 (1, namely 1-(2-bromophenyl)-3-[(R)-1-(5- trifluoromethylpyridin-2-yl)pyrrolidin-3-yl]urea) has been identified as a potent, selective and orally bioavailable TRPV1 antagonist and considered for positron emission tomography studies. SB-705498 (1) has therefore been isotopically labelled with the short-lived positron-emitter carbon-11 (t1/2: 20.38 min) at its urea site using [ 11 C]phosgene in a one-pot two-step process, via the intermediate preparation of 2-bromophenyl [ 11 C]isocyanate. Methods: Carbon-11-labeling of SB-705498 comprises: (A) Trapping of [ 11 C]phosgene (radio-synthesized from cyclotron-produced [ 11 C]methane via [ 11 C]carbon tetrachloride using minor modifications of published processes) at room temperature for 1 to 2 minutes in 250 μL of acetonitrile containing 0.6 μmole of 2-bromoaniline (2) giving 2-bromophenyl [ 11 C]isocyanate ([ 11 C]-3), followed by (B) addition of an excess of chiral (R)-1-(5- trifluoromethylpyridin-2-yl)pyrrolidin-3-ylamine (4, 40 μmoles in 500 μL of acetonitrile) as the second amine and reaction at room temperature for an additional one minute giving the desired urea derivative ([ 11 C]SB-705498 ([ 11 C]-1)), (C) dilution of the crude reaction mixture with water (500 μL) containing 4% (v:v) of DEA, injection and purification on a semi-preparative Waters Symmetry R C18 HPLC

Thermoelectrical properties of the compounds ScM{sup VIII}Sb and YM{sup VIII}Sb (M{sup VIII} = Ni, Pd, Pt)

Energy Technology Data Exchange (ETDEWEB)

Oestreich, J; Probst, U; Richardt, F; Bucher, E [University of Konstanz, PO Box X916, D-78457 Konstanz (Germany)

2003-02-05

The research into new materials with good thermoelectric properties has revealed new compounds consisting of metallic elements (Bando Y, Suemitsu T, Takagi K, Tokushima H, Echizen Y, Katoh K, Umeo K, Maeda Y and Takabatake T 2000 J. Alloys Compounds 313 1-6, Ghelani N, Loo S, Chung D, Sportouch S, Nardi S, Kanatzidis M, Hogan T and Nolas G 2000 Mater. Res. Soc. 626 Z8.6.1). The half-Heusler compound ZrNiSn, in particular, shows promising thermoelectric properties and has been studied by many scientists during recent years (Uher C, Hu S, Yang J, Meisner G P and Morelli D T 1997 Proc. ICT'97: 16th Int. Conf. on Thermoelectrics pp 485-8, Romaka L P, Stadnyk Yu V, Goryn A M, Gorelenko Yu K and Skolozdra R V 1997 Proc. ICT'97: 16th Int. Conf. on Thermoelectrics pp 516-19, Hohl H, Ramirez A P, Goldmann C, Ernst G, Woelfing B and Bucher E 1998 J. Phys.: Condens. Matter 11 1697-709, Oestreich J, Kaefer W, Richardt F, Probst U and Bucher E 1999 Proc. 5th European Workshop on Thermoelectrics pp 192-5). In an effort to find new thermoelectric materials, the half-Heusler compounds of the groups ScM{sup VIII}Sb and YM{sup VIII}Sb (M{sup VIII} = Ni, Pd, Pt) were synthesized by arc melting and the thermoelectric properties were examined by standard characterization methods. Doping experiments showed that it is possible to change the electrical properties of the compounds while retaining the half-Heusler structure. Within the two groups, YPtSb showed the best thermoelectrical properties. At a temperature of 400 K the electrical conductivity of YPtSb is 748{omega}{sup -1} cm{sup -1} and the Seebeck coefficient is 116.3{mu}V K{sup -1}. The thermal conductivity at 400 K extrapolated using the Wiedemann-Franz law is 2.87 W K{sup -1} m{sup -1}. This leads to a dimensionless figure of merit of 0.14.

Effect of lanthanide contraction on the mixed polyamine systems Ln/Sb/Se/(en+dien) and Ln/Sb/Se/(en+trien): Syntheses and characterizations of lanthanide complexes with a tetraelenidoantimonate ligand

International Nuclear Information System (INIS)

Zhao Jing; Liang Jingjing; Pan Yingli; Zhang Yong; Jia Dingxian

2011-01-01

Mixed polyamine systems Ln/Sb/Se/(en+dien) and Ln/Sb/Se/(en+trien) (Ln=lanthanide, en=ethylenediamine, dien=diethylenetriamine, trien=triethylenetetramine) were investigated under solvothermal conditions, and novel mixed-coordinated lanthanide(III) complexes [Ln(en) 2 (dien)(η 2 -SbSe 4 )] (Ln=Ce(1a), Nd(1b)), [Ln(en) 2 (dien)(SbSe 4 )] (Ln=Sm(2a), Gd(2b), Dy(2c)), [Ln(en)(trien)(μ-η 1 ,η 2 -SbSe 4 )] ∞ (Ln=Ce(3a), Nd(3b)) and [Sm(en)(trien)(η 2 -SbSe 4 )] (4a) were prepared. Two structural types of lanthanide selenidoantimonates were obtained across the lanthanide series in both en+dien and en+trien systems. The tetrahedral anion [SbSe 4 ] 3- acts as a monodentate ligand mono-SbSe 4 , a bidentate chelating ligand η 2 -SbSe 4 or a tridentate bridging ligand μ-η 1 ,η 2 -SbSe 4 to the lanthanide(III) center depending on the Ln 3+ ions and the mixed ethylene polyamines, indicating the effect of lanthanide contraction on the structures of the lanthanide(III) selenidoantimonates. The lanthanide selenidoantimonates exhibit semiconducting properties with E g between 2.08 and 2.51 eV. - Graphical Abstract: Two structural types of lanthanide(III) selenidoantimonates are formed in both en-dien and en-trien mixed polyamines across lanthanide series, indicating the lanthanide contraction effect on the structures of the lanthanide(III) selenidoantimonates. Highlights: → Two structural types of lanthanide selenidoantimonates are prepared across the lanthanide series in both Ln/Sb/Se/(en+dien) and Ln/Sb/Se/(en+trien) systems. → The [SbSe 4 ] 3- anion acts as a mono-SbSe 4 , a η 2 -SbSe 4 or a μ-η 1 ,η 2 -SbSe 4 ligand to the Ln 3+ ions. → The soft base ligand [SbSe 4 ] 3- can be controlled to coordinate to the Ln 3+ ions with en+dien and en+trien as co-ligands.

Two-band superlinear electroluminescence in GaSb based nanoheterostructures with AlSb/InAs.sub.1-x./sub.Sb.sub.x./sub./AlSb deep quantum well

Czech Academy of Sciences Publication Activity Database

Mikhailova, M. P.; Ivanov, E.V.; Danilov, L.V.; Petukhov, A.A.; Kalinina, K.V.; Slobozhanyuk, S.I.; Zegrya, G.G.; Stoyanov, N. D.; Yakovlev, Yu. P.; Hospodková, Alice; Pangrác, Jiří; Oswald, Jiří; Zíková, Markéta; Hulicius, Eduard

2014-01-01

Roč. 115, č. 22 (2014), "223102-1"-"223102-5" ISSN 0021-8979 R&D Projects: GA ČR GA13-15286S Institutional support: RVO:68378271 Keywords : MOVPE * GaSb * InAs * electroluminescence * quantum well Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.183, year: 2014

Illumination dependence of I-V and C-V characterization of Au/InSb/InP(1 0 0) Schottky structure

International Nuclear Information System (INIS)

Akkal, B.; Benamara, Z.; Bouiadjra, N. Bachir; Tizi, S.; Gruzza, B.

2006-01-01

The effects of surface preparation and illumination on electric parameters of Au/InSb/InP(100) Schottky diode were investigated, in the later diode InSb forms a fine restructuration layer allowing to block In atoms migration to surface. In order to study the electric characteristics under illumination, we make use of an He-Ne laser of 1 mW power and 632.8 nm wavelength. The current-voltage I(V G ), the capacitance-voltage C(V G ) measurements were plotted and analysed. The saturation current I s , the serial resistance R s and the mean ideality factor n are, respectively, equal to 2.03 x 10 -5 A, 85 Ω, 1.7 under dark and to 3.97 x 10 -5 A, 67 Ω, 1.59 under illumination. The analysis of I(V G ) and C(V G ) characteristics allows us to determine the mean interfacial state density N ss and the transmission coefficient θ n equal, respectively, to 4.33 x 10 12 eV -1 cm -2 , 4.08 x 10 -3 under dark and 3.79 x 10 12 eV -1 cm -2 and 5.65 x 10 -3 under illumination. The deep discrete donor levels presence in the semiconductor bulk under dark and under illumination are responsible for the non-linearity of the C -2 (V G ) characteristic

Zr3NiSb7: a new antimony-enriched ZrSb2 derivative

Directory of Open Access Journals (Sweden)

V. Romaka

2008-08-01

Full Text Available Single crystals of trizirconium nickel heptaantimonide were synthesized from the constituent elements by arc-melting. The compound crystallizes in a unique structure type and belongs to the family of two-layer structures. All crystallographically unique atoms (3 × Zr, 1 × Ni and 7 × Sb are located at sites with m symmetry. The structure contains `Zr2Ni2Sb5' and `Zr4Sb9' fragments and might be described as a new ZrSb2 derivative with a high Sb content.

InSb semiconductors and (In,Mn)Sb diluted magnetic semiconductors. Growth and properties

Energy Technology Data Exchange (ETDEWEB)

Tran, Lien

2011-04-13

This dissertation describes investigations of the growth by molecular beam epitaxy and the characterization of the semiconductor InSb as well as the diluted magnetic semiconductor (DMS) In{sub 1-x}Mn{sub x}Sb. The InSb films were grown on GaAs (001) substrate and Si (001) offcut by 4 toward (110) substrate up to a thickness of about 2 {mu}m, in spite of a large lattice mismatch between the epi-layer and substrate (14.6% between InSb and GaAs, and 19.3% between InSb and Si). After optimizing the growth conditions, the best InSb films grown directly on GaAs without any special technique results in a high crystal quality, low noise, and an electron mobility of 41100 cm{sup 2}/V s Vs with associated electron concentration of 2.9.10{sup 6} cm{sup -3} at 300 K. Such structures could be used, for example, for infrared detector structures. The growth of InSb on Si, however, is a challenge. In order to successfully grow InSb on Si, tilted substrates and the insertion of buffer layers were used, which helps to reduce the lattice mismatch as well as the formation of defects, and hence to improve the crystal quality. An electron mobility of 24000 cm{sup 2}/V s measured at 300 K, with an associated carrier concentration of 2.6.10{sup 1}6 cm{sup -3} is found for the best sample that was grown at 340 C with a 0.06 {mu}m-thick GaSb/AlSb superlattice buffer layer. The smaller value of electron mobility (compared to the best GaAsbased sample) is related to a higher density of microtwins and stacking faults as well as threading dislocations in the near-interface region as shown by transmission electron microscopy. Deep level noise spectra indicate the existence of deep levels in both GaAs and Si-based samples. The samples grown on Si exhibit the lowest Hooge factor at 300 K, lower than the samples grown on GaAs. Taking the optimized growth conditions of InSb/GaAs, the diluted magnetic semiconductor In{sub 1-x}Mn{sub x}Sb/GaAs (001) is prepared by adding a few percent of Mn into the

Self-assembly of a 1-eicosanethiolate layer on InSb(100)

Energy Technology Data Exchange (ETDEWEB)

Contreras, Yissel; Muscat, Anthony J., E-mail: muscat@email.arizona.edu

2016-05-01

Highlights: • 1-Eicosanethiolate molecules form weak bonds with InSb(100) limiting order in the SAM. • The low interaction energy of the molecules is shown by ATR-FTIR and desorption. • The bond that S makes with the substrate determines the cohesiveness of the molecules. - Abstract: 1-Eicosanethiolate molecules form relatively weak bonds with the surface of InSb(100) limiting the order of the self-assembled monolayer despite the long length of the alkyl chain. Heating to only 225 °C in vacuum completely desorbed the eicosanethiolate layer from the surface based on X-ray photoelectron spectroscopy. Even after deposition times as long as 20 h in ethanol, the asymmetric methylene stretch was at 2925 cm{sup −1} in the attenuated total reflection Fourier transform infrared spectrum, which is indicative of alkane chains that are incompletely ordered. Atomic force microscopy images combined with ellipsometry showed that the eicosanethiolate layer conformed to the rough InSb(100) starting surface (2.3 ± 0.2 nm RMS). The reoxidation kinetics in air of InSb(100) and InSb(111)B covered with eicosanethiolate layers was the same despite the lower surface roughness of the latter (0.64 ± 0.14 nm). The bond that the S head group makes with the substrate is the primary factor that determines the cohesiveness of the molecules on the surface. Although interactions between the alkane chains in the layer are sufficient to form a self-assembled layer, the fluidity of the molecules in the layer compromised the chemical passivation of the surface resulting in reoxidation in air after 20 min.

Comparison of the electrochemical performance of mesoscopic Cu2Sb, SnSb and Sn/SnSb alloy powders

International Nuclear Information System (INIS)

Zhang Ge; Huang Kelong; Liu Suqin; Zhang Wei; Gong Benli

2006-01-01

Cu 2 Sb, SnSb and Sn/SnSb mesoscopic alloy powders were prepared by chemical reduction, respectively. The crystal structures and particle morphology of Cu 2 Sb, SnSb and Sn/SnSb were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM). The electrochemical performances of the Cu 2 Sb, SnSb and Sn/SnSb electrodes were investigated by galvanostatic charge and discharge cycling and electrochemical impedance spectroscopy (EIS). The results showed the first charge and discharge capacities of SnSb and Sn/SnSb were higher than Cu 2 Sb, but after 15 cycles, the charge capacity fading rates of Cu 2 Sb, Sn/SnSb and Sn/SnSb were 26.16%, 55.33% and 47.39%, respectively. Cu 2 Sb had a better cycle performance, and Sn/SnSb multiphase alloy was prior to pure SnSb due to the existence of excessive Sn in Sn/SnSb system

Peculiarities of magnetoresistance in InSb whiskers at cryogenic temperatures

Energy Technology Data Exchange (ETDEWEB)

Druzhinin, A., E-mail: druzh@polynet.lviv.ua [Lviv Polytechnic National University, Bandera Str., 12, 79013 Lviv (Ukraine); International Laboratory of High Magnetic Fields and Low Temperatures, Gajowicka 95, Wroclaw (Poland); Ostrovskii, I.; Khoverko, Yu. [Lviv Polytechnic National University, Bandera Str., 12, 79013 Lviv (Ukraine); International Laboratory of High Magnetic Fields and Low Temperatures, Gajowicka 95, Wroclaw (Poland); Liakh-Kaguy, N.; Khytruk, I. [Lviv Polytechnic National University, Bandera Str., 12, 79013 Lviv (Ukraine); Rogacki, K. [International Laboratory of High Magnetic Fields and Low Temperatures, Gajowicka 95, Wroclaw (Poland)

2015-12-15

Highlights: • Magnetoresistance in InSb whiskers with impurity concentration near MIT is studied. • SdH oscillations of transverse and longitudinal magnetoresistance are examined. • Mechanisms of electron scattering are determined • Main crystal parameters of InSb whiskers are determined. - Abstract: The study of the magnetoresistance in InSb whiskers with an impurity concentration in the vicinity to the metal-insulator phase transition, at low temperature range 4.2–77 K, and in fields, with induction up to 14 T, was conducted. The presence of Shubnikov-de Haas oscillations in both transverse and longitudinal magnetoresistance was observed. The following parameters of InSb whiskers were defined: period of oscillations 0.1 T{sup −1}, cyclotron effective mass of electrons m{sub c} ≈ 0.14m{sub o,} concentration of charge carriers 2.3 × 10{sup 17} cm{sup −3}, g-factor g{sup *} ≈ 30 and Dingle temperature T{sub D} = 14.5 K. To determine the nature of crystal defects, the electron scattering processes on the short-range potential, caused by interaction with polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain centers and ionized impurities in n-InSb whiskers, with defect concentration 2.9 × 10{sup 17} cm{sup −3}, are considered. The temperature dependences of electron mobility in the range 4.2–500 K were calculated.

Structure and thermoelectric property of Te doped paracostibite CoSb1-xTexS compounds

Science.gov (United States)

You, Yonghui; Su, Xianli; Liu, Wei; Yan, Yonggao; Fu, Jiefei; Cheng, Xin; Zhang, Cheng; Tang, Xinfeng

2018-06-01

Paracostibite (CoSbS), a newly developed thermoelectric material, has aroused lots of interest due to its highly earth abundant and inexpensive constituent elements and potential application for thermoelectric power generation in the intermediate temperature range. Herein, a series of CoSb1-xTexS (x = 0-0.09) compounds were prepared by vacuum melting and annealing followed by SPS processing, and the effects of Te doping on the structure and thermoelectric properties were systematically investigated. Doping Te on the Sb site increases the carrier concentration up to 7.24 × 1020 cm-3 for CoSb0.93Te0.07S compound which is several orders of magnitude higher than that of un-doped CoSbS, and enhances the power factor. The maximum power factor of 14.07 μW cm-1 K-2 is attained at 900 K. Concomitantly, doping with Te on the Sb site leads to effective scattering of heat carrying phonon, accompanying with a strong suppression of the thermal conductivity with the increase of Te content, resulting in an increase of the ZT. A maximum ZT of 0.43 at 900 K is attained for CoSb0.93Te0.07S compound, which is 139% higher than that of un-doped CoSbS compound.

Constructing anisotropic single-Dirac-cones in Bi(1-x)Sb(x) thin films.

Science.gov (United States)

Tang, Shuang; Dresselhaus, Mildred S

2012-04-11

The electronic band structures of Bi(1-x)Sb(x) thin films can be varied as a function of temperature, pressure, stoichiometry, film thickness, and growth orientation. We here show how different anisotropic single-Dirac-cones can be constructed in a Bi(1-x)Sb(x) thin film for different applications or research purposes. For predicting anisotropic single-Dirac-cones, we have developed an iterative-two-dimensional-two-band model to get a consistent inverse-effective-mass-tensor and band gap, which can be used in a general two-dimensional system that has a nonparabolic dispersion relation as in the Bi(1-x)Sb(x) thin film system. © 2012 American Chemical Society

Influence of the nucleobase on the physicochemical characteristics and biological activities of Sb{sup V}-ribonucleoside complexes

Energy Technology Data Exchange (ETDEWEB)

Ferreira, Claudio S.; Demicheli, Cynthia, E-mail: demichel@netuno.lcc.ufmg.b [Universidade Federal de Minas Gerais (UFMG), Belo Horizonte, MG (Brazil). Dept. de Quimica; Rocha, Iara C.M. da; Melo, Maria N. [Universidade Federal de Minas Gerais (UFMG), Belo Horizonte, MG (Brazil). Dept. de Parasitologia; Monte Neto, Rubens L.; Frezard, Frederic [Universidade Federal de Minas Gerais (UFMG), Belo Horizonte, MG (Brazil). Dept. de Fisiologia e Biofisica

2010-07-01

The influence of the nucleobase (uracyl, U; cytosine, C; adenine, A; guanine, G) on the physicochemical characteristics and in vitro biological activities of Sb{sup V}-ribonucleoside complexes has been investigated. The 1:1 Sb-U and Sb-C complexes were characterized by NMR and ESI-MS spectroscopies and elemental analysis. The stability constant and the apparent association and dissociation rate constants of 1:1 Sb{sup V}-U, Sb{sup V}-C and Sb{sup V}-A complexes were determined. Although Sb{sup V} most probably binds via oxygen atoms to the same 2' and 3' positions in the different nucleosides, the ribose conformational changes and the physicochemical characteristics of the complex depend on the nucleobase. The nucleobase had a strong influence on the cytotoxicity against macrophages and the antileishmanial activity of the Sb{sup V}-ribonucleoside complexes. The Sb{sup V}-purine complexes were more cytotoxic and more effective against Leishmania chagasi than the Sb{sup V}-pyrimidine complexes, supporting the model that the interaction of Sb{sup V} with purine nucleosides may mediate the antileishmanial activity of pentavalent antimonial drugs. (author)

Ultrasonic dispersion and off-center rattling in heavy fermion superconductor PrOs4Sb12

International Nuclear Information System (INIS)

Nemoto, Yuichi; Ueno, Takafumi; Takeda, Naoya; Yamaguchi, Takashi; Yanagisawa, Tatsuya; Goto, Terutaka; Sugawara, Hitoshi; Sato, Hideyuki

2006-01-01

Ultrasonic attenuation measurements have been firstly performed for a large single crystal of PrOs 4 Sb 12 with the dimensions of 5.97x0.6x0.6mm 3 . Remarkable frequency dependence around 20-40K has been observed in the elastic constant and attenuation coefficient of the longitudinal C 11 mode associated with E g symmetry strain in part, which results from a thermally activated off-center rattling with E g symmetry of a Pr ion inside a Sb icosahedron cage. Parameters of a characteristic time τ 0 =3.1x10 -11 s and an activation energy E=225K were obtained. This E g rattling involving a local charge fluctuation inside a Sb cage periodically arranged may couple to the conduction electrons. As a result, the electron-phonon coupling would lead to heavy fermion and its superconductivity in PrOs 4 Sb 12

Compositional and structural characterisation of GaSb and GaInSb

International Nuclear Information System (INIS)

Corregidor, V.; Alves, E.; Alves, L.C.; Barradas, N.P.; Duffar, Th.; Franco, N.; Marques, C.; Mitric, A.

2005-01-01

Low band gap III-V semiconductors are researched for applications in thermophotovoltaic technology. GaSb crystal is often used as a substrate. Ga 1-x In x Sb is also a promising substrate material, because its lattice parameters can be adjusted by controlling x. We used a new method to synthesise GaSb and GaInSb, in which a high frequency alternate magnetic field is used to heat, to melt and to mix the elements. We present a compositional and structural characterisation of the materials using a combination of complementary techniques. Rutherford backscattering was used to determine accurately the composition of the GaSb. With proton induced X-ray emission in conjunction with a 3 x 3 μm 2 micro-beam we studied the homogeneity of the samples. Structural analysis and phase identification were done with X-ray diffraction. The results for GaSb show a homogeneous composition while the GaInSb samples were found to be strongly heterogeneous at the end of the ingot. The ingots produced are competitive feed material, when compared to other growth techniques, to be used in a second step for the production of good quality ternary crystals

Local structural environments of Ge doped in eutectic Sb-Te film before and after crystallization

Science.gov (United States)

Shin, Sang Yeol; Cheong, Byung-ki; Choi, Yong Gyu

2018-06-01

Electrical phase change device using the Ge-doped eutectic Sb-Te (e.g., Ge1Sb8Te2) film is known to exhibit improved energy efficiency thanks to lowered threshold voltage as well as decreased power consumption for the reset operation, as compared with Ge2Sb2Te5 film. Ge K-edge EXAFS analysis is employed in this study in an effort to elucidate such merits of Ge1Sb8Te2 film in connection with its local atomic arrangements. It is then verified that a Ge atom is four-fold coordinated in its nearest-neighboring shell both in the as-deposited and in the annealed films. It needs to be highlighted that approximately two Sb atoms constitute the Ge tetrahedral units in its amorphous state; however, after being crystallized, heteropolar Ge-Sb bonds hardly exist in this Ge1Sb8Te2 film. It has been known that crystallization temperature and activation energy for crystallization of this Ge1Sb8Te2 composition are greater than those of Ge2Sb2Te5 composition. In addition, these two phase change materials exhibit distinctly different crystallization mechanisms, i.e., nucleation-dominant for Ge2Sb2Te5 film but growth-dominant for Ge1Sb8Te2 film. These discrepancies in the crystallization-related properties are delineated in terms of the local structural changes verified from the present EXAFS analysis.

InSb semiconductors and (In,Mn)Sb diluted magnetic semiconductors: Growth and properties

International Nuclear Information System (INIS)

Tran, Lien

2011-01-01

This dissertation describes investigations of the growth by molecular beam epitaxy and the characterization of the semiconductor InSb as well as the diluted magnetic semiconductor (DMS) In 1-x Mn x Sb. The InSb films were grown on GaAs (001) substrate and Si (001) offcut by 4 toward (110) substrate up to a thickness of about 2 μm, in spite of a large lattice mismatch between the epi-layer and substrate (14.6% between InSb and GaAs, and 19.3% between InSb and Si). After optimizing the growth conditions, the best InSb films grown directly on GaAs without any special technique results in a high crystal quality, low noise, and an electron mobility of 41100 cm 2 /V s Vs with associated electron concentration of 2.9.10 6 cm -3 at 300 K. Such structures could be used, for example, for infrared detector structures. The growth of InSb on Si, however, is a challenge. In order to successfully grow InSb on Si, tilted substrates and the insertion of buffer layers were used, which helps to reduce the lattice mismatch as well as the formation of defects, and hence to improve the crystal quality. An electron mobility of 24000 cm 2 /V s measured at 300 K, with an associated carrier concentration of 2.6.10 1 6 cm -3 is found for the best sample that was grown at 340 C with a 0.06 μm-thick GaSb/AlSb superlattice buffer layer. The smaller value of electron mobility (compared to the best GaAsbased sample) is related to a higher density of microtwins and stacking faults as well as threading dislocations in the near-interface region as shown by transmission electron microscopy. Deep level noise spectra indicate the existence of deep levels in both GaAs and Si-based samples. The samples grown on Si exhibit the lowest Hooge factor at 300 K, lower than the samples grown on GaAs. Taking the optimized growth conditions of InSb/GaAs, the diluted magnetic semiconductor In 1-x Mn x Sb/GaAs (001) is prepared by adding a few percent of Mn into the host material InSb during growth. I have

The single crystal structure determination of Ln{sub 6}MnSb{sub 15} (Ln=La, Ce), Ln{sub 6}Mn{sub 1-x}Zn{sub x}Sb{sub 15} (x∝0.5), and Ln{sub 6}ZnSb{sub 15} (Ln=La-Pr)

Energy Technology Data Exchange (ETDEWEB)

Benavides, Katherine A.; McCandless, Gregory T.; Chan, Julia Y. [Texas Univ., Dallas, Richardson, TX (United States). Dept. of Chemistry and Biochemistry

2017-09-01

Single crystals of Ln{sub 6}MnSb{sub 15} (Ln=La, Ce), Ln{sub 6}Mn{sub 1-x}Zn{sub x}Sb{sub 15} (x∝0.5), and Ln{sub 6}ZnSb{sub 15} (Ln=La-Pr) have been successfully grown and the compounds adopt the orthorhombic Ln{sub 6}MnSb{sub 15} structure type (space group Immm), with a∝4.3 Aa, b∝15 Aa, and c∝19 Aa. This structure is comprised of antimony nets and antimony ribbons which exhibit positional disorder at connecting points between antimony substructures, in addition to two partially occupied transition metal sites. The unit cell volumes of the La analogs displayed a systematic decrease upon Zn substitution. However, for the Ce{sub 6}Mn{sub 1-x}Zn{sub x}Sb{sub 15} and Pr{sub 6}Mn{sub 1-x}Zn{sub x}Sb{sub 15} (x∝0.5), the volumes deviate from linearity as observed in the parent compounds.

Facile synthesis of one-dimensional hollow Sb2O3@TiO2 composites as anode materials for lithium ion batteries

Science.gov (United States)

Wang, Zhaomin; Cheng, Yong; Li, Qian; Chang, Limin; Wang, Limin

2018-06-01

Metallic Sb is deemed as a promising anode material for lithium ion batteries (LIBs) due to its flat voltage platform and high security. Nevertheless, the limited capacity restricts its large-scale application. Therefore, a simple and effective method to explore novel antimony trioxide with high capacity used as anode material for LIBs is imperative. In this work, we report a facile and efficient strategy to fabricate 1D hollow Sb2O3@TiO2 composites by using the Kirkendall effect. When used as an anode material for LIBs, the optimal Sb2O3@TiO2 composite displays a high reversible discharge capacity of 593 mAh g-1 at a current density of 100 mA g-1 after 100 cycles and a relatively superior discharge capacity of 439 mAh g-1 at a current density of 500 mA g-1 even after 600 cycles. In addition, a reversible discharge capacity of 334 mAh g-1 can also be obtained even at a current density of 2000 mA g-1. The excellent cycling stability and rate performance of the Sb2O3@TiO2 composite can be attributed to the synergistic effect of TiO2 shell and hollow structure of Sb2O3, both of which can effectively buffer the volume expansion and maintain the integrity of the electrode during the repeated charge-discharge cycles.

Preclinical and first clinical experience with the gastrin-releasing peptide receptor-antagonist [68Ga]SB3 and PET/CT

International Nuclear Information System (INIS)

Maina, Theodosia; Charalambidis, David; Nock, Berthold A.; Bergsma, Hendrik; Krenning, Eric P.; Kulkarni, Harshad R.; Mueller, Dirk; Baum, Richard P.; Jong, Marion de

2016-01-01

Gastrin-releasing peptide receptors (GRPR) represent attractive targets for tumor diagnosis and therapy because of their overexpression in major human cancers. Internalizing GRPR agonists were initially proposed for prolonged lesion retention, but a shift of paradigm to GRPR antagonists has recently been made. Surprisingly, radioantagonists, such as [ 99m Tc]DB1 ( 99m Tc-N 4 '-DPhe 6 ,Leu-NHEt 13 BBN(6-13)), displayed better pharmacokinetics than radioagonists, in addition to their higher inherent biosafety. We introduce here [ 68 Ga]SB3, a [ 99m Tc]DB1 mimic-carrying, instead of the 99m Tc-binding tetraamine, the chelator DOTA for labeling with the PET radiometal 68 Ga. Competition binding assays of SB3 and [ nat Ga]SB3 were conducted against [ 125 I-Tyr 4 ]BBN in PC-3 cell membranes. Blood samples collected 5 min postinjection (pi) of the [ 67 Ga]SB3 surrogate in mice were analyzed using high-performance liquid chromatography (HPLC) for degradation products. Likewise, biodistribution was performed after injection of [ 67 Ga]SB3 (37 kBq, 100 μL, 10 pmol peptide) in severe combined immunodeficiency (SCID) mice bearing PC-3 xenografts. Eventually, [ 68 Ga]SB3 (283 ± 91 MBq, 23 ± 7 nmol) was injected into 17 patients with breast (8) and prostate (9) cancer. All patients had disseminated disease and had received previous therapies. PET/CT fusion images were acquired 60-115 min pi. SB3 and [ nat Ga]SB3 bound to the human GRPR with high affinity (IC 50 : 4.6 ± 0.5 nM and 1.5 ± 0.3 nM, respectively). [ 67 Ga]SB3 displayed good in vivo stability (>85 % intact at 5 min pi). [ 67 Ga]SB3 showed high, GRPR-specific and prolonged retention in PC-3 xenografts (33.1 ± 3.9%ID/g at 1 h pi - 27.0 ± 0.9%ID/g at 24 h pi), but much faster clearance from the GRPR-rich pancreas (∼160%ID/g at 1 h pi to <17%ID/g at 24 h pi) in mice. In patients, [ 68 Ga]SB3 elicited no adverse effects and clearly visualized cancer lesions. Thus, 4 out of 8 (50 %) breast cancer and 5 out of 9

Epitaxial Growth and Electronic Structure of Half Heuslers Co1-xNixTiSb (001), Ni1-xCoxTiSn, and PtLuSb

Science.gov (United States)

2016-01-09

lineup of CoTiSb with conventional III/V’s, the valence-band discontinuities in abrupt CoTiSb/InGaAs(001) and CoTiSb/InAlAs(001) heterojunctions were...confirm identification of a topological surface state: first, the state must be confined and show no out-of-plane dispersion; second, the state

High-spin, multiparticle isomers in 121,123Sb

International Nuclear Information System (INIS)

Jones, G. A.; Walker, P. M.; Podolyak, Zs.; Cullen, I. J.; Garnsworthy, A. B.; Liu, Z.; Thompson, N. J.; Williams, S. J.; Zhu, S.; Carpenter, M. P.; Janssens, R. V. F.; Khoo, T. L.; Seweryniak, D.; Carroll, J. J.; Chakrawarthy, R. S.; Hackman, G.; Chowdhury, P.; Dracoulis, G. D.; Lane, G. J.; Kondev, F. G.

2008-01-01

Isomers in near-spherical Z=51, antimony isotopes are reported here for the first time using fusion-fission reactions between 27 Al and a pulsed 178 Hf beam of energy, 1150 MeV. γ rays were observed from the decay of isomeric states with half-lives, T 1/2 =200(30) and 52(3)μs, and angular momenta I=((25/2)) and I π =(23/2) + , in 121,123 Sb, respectively. These states are proposed to correspond to ν(h (11/2) ) 2 configurations, coupled to an odd d (5/2) or g (7/2) proton. Nanosecond isomers were also identified at I π =(19/2) - [T 1/2 =8.5(5) ns] in 121 Sb and I π =((15/2) - ) [T 1/2 =37(4) ns] in 123 Sb. Information on spins and parities of states in these nuclei was obtained using a combination of angular correlation and intensity-balance measurements. The configurations of states in these nuclei are discussed using a combination of spin/energy systematics and shell-model calculations for neighboring tin isotones and antimony isotopes

Three-Dimensional Reduced Graphene Oxide Coupled with Mn3O4 for Highly Efficient Removal of Sb(III) and Sb(V) from Water.

Science.gov (United States)

Zou, Jian-Ping; Liu, Hui-Long; Luo, Jinming; Xing, Qiu-Ju; Du, Hong-Mei; Jiang, Xun-Heng; Luo, Xu-Biao; Luo, Sheng-Lian; Suib, Steven L

2016-07-20

Highly porous, three-dimensional (3D) nanostructured composite adsorbents of reduced graphene oxides/Mn3O4 (RGO/Mn3O4) were fabricated by a facile method of a combination of reflux condensation and solvothermal reactions and systemically characterized. The as-prepared RGO/Mn3O4 possesses a mesoporous 3D structure, in which Mn3O4 nanoparticles are uniformly deposited on the surface of the reduced graphene oxide. The adsorption properties of RGO/Mn3O4 to antimonite (Sb(III)) and antimonate (Sb(V)) were investigated using batch experiments of adsorption isotherms and kinetics. Experimental results show that the RGO/Mn3O4 composite has fast liquid transport and superior adsorption capacity toward antimony (Sb) species in comparison to six recent adsorbents reported in the literature and summarized in a table in this paper. Theoretical maximum adsorption capacities of RGO/Mn3O4 toward Sb(III) and Sb(V) are 151.84 and 105.50 mg/g, respectively, modeled by Langmuir isotherms. The application of RGO/Mn3O4 was demonstrated by using drinking water spiked with Sb (320 μg/L). Fixed-bed column adsorption experiments indicate that the effective breakthrough volumes were 859 and 633 mL bed volumes (BVs) for the Sb(III) and Sb(V), respectively, until the maximum contaminant level of 5 ppb was reached, which is below the maximum limits allowed in drinking water according to the most stringent regulations. The advantages of being nontoxic, highly stable, and resistant to acid and alkali and having high adsorption capacity toward Sb(III) and Sb(V) confirm the great potential application of RGO/Mn3O4 in Sb-spiked water treatment.

¹¹¹In-DOTA-Annexin V for imaging of apoptosis during HSV1-tk/GCV prodrug activation gene therapy in mice with NG4TL4 sarcoma.

Science.gov (United States)

Lin, Ming-Hsien; Wu, Shih-Yen; Wang, Hsin-Ell; Liu, Ren-Shyan; Chen, Jyh-Cheng

2016-02-01

Apoptosis has been suggested as a cytocidal mechanism of the HSV1-tk-expressing cells when exposed to ganciclovir (GCV). This study evaluated the efficacy of (111)In-labeled Annexin V for monitoring tumor responses during prodrug activation gene therapy with HSV1-tk and GCV. Annexin V was conjugated to DOTA using N-hydroxysulfosuccinimide (sulfo-NHS) and 1-ethyl-3-[3-(dimethylamino)propyl]carbodiimide (EDC), labeled with (111)In-InCl3 and purified using size exclusion chromatography to give (111)In-DOTA-Annexin V conjugate. The radiochemical yield and the radiochemical purity of (111)In-DOTA-Annexin V were 74±12% and 98±3%, respectively (n=10). (111)In-DOTA-BSA was prepared similarly. An in vitro study to demonstrate the apoptosis of NG4TL4-STK cells after GCV treatment has been performed. Mice bearing NG4TL4-STK and NG4TL4-WT tumors were treated with GCV (10 mg/kg daily) by i.p. injection for 7 consecutive days. Before and during the GCV treatment, biodistribution studies and scintigraphic imaging were performed at 2h post injection of the radiotracers. The uptake of (111)In-DOTA-Annexin V in treated cells (13.41±1.30%) was 4.1 times higher than that in untreated cells (3.21±0.37%). The GCV-induced cell apoptosis in NG4TL4-STK tumor resulted in a significantly increasing accumulation of (111)In-DOTA-Annexin V (1.92±0.32%ID/g at day 0, 4.79±0.86%ID/g at day 2, 4.56±0.58%ID/g at day 4) was observed, but not for that of (111)In-DOTA-BSA. During consecutive GCV treatment, scintigraphic imaging with (111)In-DOTA-Annexin V revealed high uptake in NG4TL4-STK tumor compared with that in NG4TL4-WT tumor. However, no specific (111)In-DOTA-BSA accumulation in NG4TL4-STK and NG4TL4-WT tumors was observed throughout the course of GCV treatment. This study demonstrated that (111)In-DOTA-Annexin V can be used for monitoring tumor cell apoptosis during prodrug activation gene therapy with HSV1-tk and GCV for cancer treatment. Copyright © 2015 Elsevier Ltd. All rights

Preparation and Thermoelectric Properties of Graphite/Bi0.5Sb1.5Te3 Composites

Science.gov (United States)

Hu, Wenhua; Zhou, Hongyu; Mu, Xin; He, Danqi; Ji, Pengxia; Hou, Weikang; Wei, Ping; Zhu, Wanting; Nie, Xiaolei; Zhao, Wenyu

2018-06-01

Bismuth telluride zone-melting alloys are the most commercially used thermoelectric materials. However, the zone-melting ingots have weak machinability due to the strong preferred orientation. Here, non-textured graphite/Bi0.5Sb1.5Te3 (G/BST) composites were prepared by a powder metallurgy method combined with cold-pressing and annealing treatments. The composition, microstructure, and thermoelectric properties of the G/BST composites with different mass percentages of G were investigated. It was found that G addition could effectively reduce the thermal conductivity and slightly improve the electrical properties of the BST, which resulted in a large enhancement in the figure-of-merit, ZT. The largest ZT for the xG/BST composites with x = 0.05% reached 1.05 at 320 K, which is increased by 35% as compared with that of the G-free BST materials. This work provided an effective method for preparing non-textured Bi2Te3-based TE materials with a simple process, low cost, and large potential in scale production.

Porous carbon-free SnSb anodes for high-performance Na-ion batteries

Science.gov (United States)

Choi, Jeong-Hee; Ha, Choong-Wan; Choi, Hae-Young; Seong, Jae-Wook; Park, Cheol-Min; Lee, Sang-Min

2018-05-01

A simple melt-spinning/chemical-etching process is developed to create porous carbon-free SnSb anodes. Sodium ion batteries (SIBs) incorporating these anodes exhibit excellent electrochemical performances by accomodating large volume changes during repeated cycling. The porous carbon-free SnSb anode produced by the melt-spinning/chemical-etching process shows a high reversible capacity of 481 mAh g-1, high ICE of 80%, stable cyclability with a high capacity retention of 99% after 100 cycles, and a fast rate capability of 327 mAh g-1 at 4C-rate. Ex-situ X-ray diffraction and high resolution-transmission electron microscopy analyses demonstrate that the synthesized porous carbon-free SnSb anodes involve the highly reversible reaction with sodium through the conversion and recombination reactions during sodiation/desodiation process. The novel and simple melt-spinning/chemical-etching synthetic process represents a technological breakthrough in the commercialization of Na alloy-able anodes for SIBs.

121Sb-NMR study of filled skutterudite CeOs4Sb12

International Nuclear Information System (INIS)

Yogi, M.; Niki, H.; Mukuda, H.; Kitaoka, Y.; Sugawara, H.; Sato, H.

2007-01-01

121 Sb nuclear magnetic resonance (NMR) of filled skutterudite compound CeOs 4 Sb 12 has been carried out to investigate a spin fluctuation below T∼25K. In spite of a powdered sample, many sharp peaks, similar to a data for single crystal, were observed because of an orientation of the sample from the anisotropy of the magnetization. A numerical calculation well reproduces resonance fields for Sb(1) sites with H parallel V zz . The nuclear spin-lattice relaxation rate divided by temperature 1/T 1 T shows continuous decrease with increasing magnetic field, indicating a suppression of the spin fluctuation by the field

Molecular beam epitaxial growth and characterization of GaSb layers on GaAs (0 0 1) substrates

International Nuclear Information System (INIS)

Li Yanbo; Zhang Yang; Zhang Yuwei; Wang Baoqiang; Zhu Zhanping; Zeng Yiping

2012-01-01

We report on the growth of GaSb layers on GaAs (0 0 1) substrates by molecular beam epitaxy (MBE). We investigate the influence of the GaAs substrate surface treatment, growth temperature, and V/III flux ratios on the crystal quality and the surface morphology of GaSb epilayers. Comparing to Ga-rich GaAs surface preparation, the Sb-rich GaAs surface preparation can promote the growth of higher-quality GaSb material. It is found that the crystal quality, electrical properties, and surface morphology of the GaSb epilayers are highly dependent on the growth temperature, and Sb/Ga flux ratios. Under the optimized growth conditions, we demonstrate the epitaxial growth of high quality GaSb layers on GaAs substrates. The p-type nature of the unintentionally doped GaSb is studied and from the growth conditions dependence of the hole concentrations of the GaSb, we deduce that the main native acceptor in the GaSb is the Ga antisite (Ga Sb ) defect.

The Enzyme Activity and Substrate Specificity of Two Major Cinnamyl Alcohol Dehydrogenases in Sorghum (Sorghum bicolor), SbCAD2 and SbCAD4.

Science.gov (United States)

Jun, Se-Young; Walker, Alexander M; Kim, Hoon; Ralph, John; Vermerris, Wilfred; Sattler, Scott E; Kang, ChulHee

2017-08-01

Cinnamyl alcohol dehydrogenase (CAD) catalyzes the final step in monolignol biosynthesis, reducing sinapaldehyde, coniferaldehyde, and p -coumaraldehyde to their corresponding alcohols in an NADPH-dependent manner. Because of its terminal location in monolignol biosynthesis, the variation in substrate specificity and activity of CAD can result in significant changes in overall composition and amount of lignin. Our in-depth characterization of two major CAD isoforms, SbCAD2 (Brown midrib 6 [bmr6]) and SbCAD4, in lignifying tissues of sorghum ( Sorghum bicolor ), a strategic plant for generating renewable chemicals and fuels, indicates their similarity in both structure and activity to Arabidopsis ( Arabidopsis thaliana ) CAD5 and Populus tremuloides sinapyl alcohol dehydrogenase, respectively. This first crystal structure of a monocot CAD combined with enzyme kinetic data and a catalytic model supported by site-directed mutagenesis allows full comparison with dicot CADs and elucidates the potential signature sequence for their substrate specificity and activity. The L119W/G301F-SbCAD4 double mutant displayed its substrate preference in the order coniferaldehyde > p -coumaraldehyde > sinapaldehyde, with higher catalytic efficiency than that of both wild-type SbCAD4 and SbCAD2. As SbCAD4 is the only major CAD isoform in bmr6 mutants, replacing SbCAD4 with L119W/G301F-SbCAD4 in bmr6 plants could produce a phenotype that is more amenable to biomass processing. © 2017 American Society of Plant Biologists. All Rights Reserved.

Synthesis and electrochemical characteristics of Sn-Sb-Ni alloy composite anode for Li-ion rechargeable batteries

International Nuclear Information System (INIS)

Guo Hong; Zhao Hailei; Jia Xidi; Qiu Weihua; Cui Fenge

2007-01-01

Micro-scaled Sn-Sb-Ni alloy composite was synthesized from oxides of Sn, Sb and Ni via carbothermal reduction. The phase composition and electrochemical properties of the Sn-Sb-Ni alloy composite anode material were studied. The prepared alloy composite electrode exhibits a high specific capacity and a good cycling stability. The lithiation capacity was 530 mAh g -1 in the first cycle and maintained at 370-380 mAh g -1 in the following cycles. The good electrochemical performance may be attributed to its relatively large particle size and multi-phase characteristics. The former reason leads to the lower surface impurity and thus the lower initial capacity loss, while the latter results in a stepwise lithiation/delithiation behavior and a smooth volume change of electrode in cycles. The Sn-Sb-Ni alloy composite material shows a good candidate anode material for the rechargeable lithium ion batteries

Roles of Cu in the Enhanced Thermoelectric Properties in Bi0.5Sb1.5Te₃.

Science.gov (United States)

Hao, Feng; Qiu, Pengfei; Song, Qingfeng; Chen, Hongyi; Lu, Ping; Ren, Dudi; Shi, Xun; Chen, Lidong

2017-03-01

Recently, Cu-containing p-type Bi 0.5 Sb 1.5 Te₃ materials have shown high thermoelectric performances and promising prospects for practical application in low-grade waste heat recovery. However, the position of Cu in Bi 0.5 Sb 1.5 Te₃ is controversial, and the roles of Cu in the enhancement of thermoelectric performance are still not clear. In this study, via defects analysis and stability test, the possibility of Cu intercalation in p-type Bi 0.5 Sb 1.5 Te₃ materials has been excluded, and the position of Cu is identified as doping at the Sb sites. Additionally, the effects of Cu dopants on the electrical and thermal transport properties have been systematically investigated. Besides introducing additional holes, Cu dopants can also significantly enhance the carrier mobility by decreasing the Debye screen length and weakening the interaction between carriers and phonons. Meanwhile, the Cu dopants interrupt the periodicity of lattice vibration and bring stronger anharmonicity, leading to extremely low lattice thermal conductivity. Combining the suppression on the intrinsic excitation, a high thermoelectric performance-with a maximum thermoelectric figure of merit of around 1.4 at 430 K-has been achieved in Cu 0.005 Bi 0.5 Sb 1.495 Te₃, which is 70% higher than the Bi 0.5 Sb 1.5 Te₃ matrix.

Ab initio study of domain structures in half-metallic CoTi{sub 1−x}Mn{sub x}Sb and thermoelectric CoTi{sub 1−x}Sc{sub x}Sb half-Heusler alloys

Energy Technology Data Exchange (ETDEWEB)

Miranda Mena, Joaquin, E-mail: joaquin.miranda@uni-bayreuth.de; Schoberth, Heiko G.; Gruhn, Thomas; Emmerich, Heike

2015-11-25

We present first-principles calculations of the electronic density of state, the structures in CoTi{sub 1−x}Sc{sub x}Sb and CoTi{sub 1−x}Mn{sub x}Sb. In addition for the latter we calculate magnetic moments. Systems with different stoichiometries are compared and low energy configurations are determined using a cluster expansion procedure. For all studied manganese concentrations, x > 0, CoTi{sub 1−x}Mn{sub x}Sb is half-metallic and magnetic, which make it interesting for spintronic applications. In contrast, with increasing scandium concentration, the band gap of CoTi{sub x}Sc{sub 1-x}Sb closes continuously, while the material changes from a semiconductor to a non-magnetic metal. For low Sc doping this material is well suited for thermoelectric applications. The electronic states close to the Fermi energy are strongly influenced by the distribution of Ti and Mn (or Ti and Sc). This has important consequences for the usage of materials in application fields like spintronics and thermoelectrics. In general, a phase separation of the alloys into a Ti rich and a Ti poor phase is energetically favored. Using mean field theory we create a phase diagram that shows the coexistence and the spinodal region. A spontaneous demixing can be used for the creation of nanodomains within the material. In the case of CoTi{sub 1−x}Sc{sub x}Sb, the resulting reduced lattice thermal conductivity is beneficial for thermoelectric applications, while in CoTi{sub 1−x}Mn{sub x}Sb the nanodomains are detrimental for polarization.

Adducts of UF5 with SbF5 and structure of UF5 . 2SbF5

International Nuclear Information System (INIS)

Sawodny, W.; Rediess, K.

1980-01-01

Both α-UF 5 and β-UF 5 form only a 1:2 compound UF 5 . 2SbF 5 reacting directly with SbF 5 , from which UF 5 . SbF 5 can be obtained by thermal decomposition. UF 5 . 2SbF 5 crystallizes in the monoclinic space group P2 1 /c with the following lattice constants a = 8.110(4), b = 14.129(6), c = 10.032(6) A and β = 96.97(5) 0 ; Z = 4. An X-ray study shows centrosymmetric four-membered rings of alternating UF 8 and SbF 6 polyhedra connected by other SbF 6 entities. This structure is similar to that of UOF 5 . 2SbF 5 , but the distorted pentagonal-bipyramidal coordination of the U atom found there is increased to a dodecahedral coordination by an additional U-F-Sb bridge, though with a somewaht larger UF distance. (author)

Preclinical and first clinical experience with the gastrin-releasing peptide receptor-antagonist [⁶⁸Ga]SB3 and PET/CT.

Science.gov (United States)

Maina, Theodosia; Bergsma, Hendrik; Kulkarni, Harshad R; Mueller, Dirk; Charalambidis, David; Krenning, Eric P; Nock, Berthold A; de Jong, Marion; Baum, Richard P

2016-05-01

Gastrin-releasing peptide receptors (GRPR) represent attractive targets for tumor diagnosis and therapy because of their overexpression in major human cancers. Internalizing GRPR agonists were initially proposed for prolonged lesion retention, but a shift of paradigm to GRPR antagonists has recently been made. Surprisingly, radioantagonists, such as [(99m)Tc]DB1 ((99m)Tc-N4'-DPhe(6),Leu-NHEt(13)]BBN(6-13)), displayed better pharmacokinetics than radioagonists, in addition to their higher inherent biosafety. We introduce here [(68)Ga]SB3, a [(99m)Tc]DB1 mimic-carrying, instead of the (99m)Tc-binding tetraamine, the chelator DOTA for labeling with the PET radiometal (68)Ga. Competition binding assays of SB3 and [(nat)Ga]SB3 were conducted against [(125)I-Tyr(4)]BBN in PC-3 cell membranes. Blood samples collected 5 min postinjection (pi) of the [(67)Ga]SB3 surrogate in mice were analyzed using high-performance liquid chromatography (HPLC) for degradation products. Likewise, biodistribution was performed after injection of [(67)Ga]SB3 (37 kBq, 100 μL, 10 pmol peptide) in severe combined immunodeficiency (SCID) mice bearing PC-3 xenografts. Eventually, [(68)Ga]SB3 (283 ± 91 MBq, 23 ± 7 nmol) was injected into 17 patients with breast (8) and prostate (9) cancer. All patients had disseminated disease and had received previous therapies. PET/CT fusion images were acquired 60-115 min pi. SB3 and [(nat)Ga]SB3 bound to the human GRPR with high affinity (IC50: 4.6 ± 0.5 nM and 1.5 ± 0.3 nM, respectively). [(67)Ga]SB3 displayed good in vivo stability (>85 % intact at 5 min pi). [(67)Ga]SB3 showed high, GRPR-specific and prolonged retention in PC-3 xenografts (33.1 ± 3.9%ID/g at 1 h pi - 27.0 ± 0.9%ID/g at 24 h pi), but much faster clearance from the GRPR-rich pancreas (≈160%ID/g at 1 h pi to <17%ID/g at 24 h pi) in mice. In patients, [(68)Ga]SB3 elicited no adverse effects and clearly visualized cancer lesions. Thus, 4 out of 8 (50 %) breast

Treatment of air pollution control residues with iron rich waste sulfuric acid: does it work for antimony (Sb)?

Science.gov (United States)

Okkenhaug, Gudny; Breedveld, Gijs D; Kirkeng, Terje; Lægreid, Marit; Mæhlum, Trond; Mulder, Jan

2013-03-15

Antimony (Sb) in air pollution control (APC) residues from municipal solid waste incineration has gained increased focus due to strict Sb leaching limits set by the EU landfill directive. Here we study the chemical speciation and solubility of Sb at the APC treatment facility NOAH Langøya (Norway), where iron (Fe)-rich sulfuric acid (∼3.6M, 2.3% Fe(II)), a waste product from the industrial extraction of ilmenite, is used for neutralization. Antimony in water extracts of untreated APC residues occurred exclusively as pentavalent antimonate, even at low pH and Eh values. The Sb solubility increased substantially at pH<10, possibly due to the dissolution of ettringite (at alkaline pH) or calcium (Ca)-antimonate. Treated APC residues, stored anoxically in the laboratory, simulating the conditions at the NOAH Langøya landfill, gave rise to decreasing concentrations of Sb in porewater, occurring exclusively as Sb(V). Concentrations of Sb decreased from 87-918μgL(-1) (day 3) to 18-69μgL(-1) (day 600). We hypothesize that an initial sorption of Sb to Fe(II)-Fe(III) hydroxides (green rust) and eventually precipitation of Ca- and Fe-antimonates (tripuhyite; FeSbO4) occurred. We conclude that Fe-rich, sulfuric acid waste is efficient to immobilize Sb in APC residues from waste incineration. Copyright © 2013 Elsevier B.V. All rights reserved.

Structure and composition of chemically prepared and vacuum annealed InSb(0 0 1) surfaces

International Nuclear Information System (INIS)

Tereshchenko, O.E.

2006-01-01

The InSb(0 0 1) surfaces chemically treated in HCl-isopropanol solution and annealed in vacuum were studied by means of X-ray photoelectron spectroscopy (XPS), low energy electron diffraction (LEED) and electron energy-loss spectroscopy (EELS). The HCl-isopropanol treatment removes indium and antimony oxides and leaves on the surface about 3 ML of physisorbed overlayer, containing indium chlorides and small amounts of antimony, which can be thermally desorbed at 230 deg. C. The residual carbon contaminations were around 0.2-0.4 ML and consisted of the hydrocarbon molecules. These hydrocarbon contaminations were removed from the surface together with the indium chlorides and antimony overlayer. With increased annealing temperature, a sequence of reconstructions were identified by LEED: (1 x 1), (1 x 3), (4 x 3), and (4 x 1)/c(8 x 2), in the order of decreasing Sb/In ratio. The structural properties of chemically prepared InSb(0 0 1) surface were found to be similar to those obtained by decapping of Sb-capped epitaxial layers

Synthesis and electrochemical performance of hierarchical Sb2S3 nanorod-bundles for lithium-ion batteries

Directory of Open Access Journals (Sweden)

XIAOZHONG ZHOU

2014-05-01

Full Text Available Uniform hierarchical Sb2S3 nanorod-bundles were synthesised successfully by L-cysteine hydrochloride-assisted solvothermal treatment, and were then characterised by X-ray diffraction, field emission scanning electron microscopy, and high-resolution transmission electron microscopy, respectively. The electrochemical performance of the synthesised Sb2S3 nanorod-bundles was investigated by cyclic voltammetry and galvanostatic charge−discharge technique, respectively. This material was found to exhibit a high initial charge specific capacity of 803 mA h g-1 at a rate of 100 mA g-1, a good cyclability of 614 mA h g-1 at a rate of 100 mA g-1 after 30 cycles, and a good rate capability of 400 mA h g-1 at a rate of 500 mA g-1 when evaluated as an electrode candidate material for lithium-ion batteries.

Analysis of the FIST integral tests 4DBA1, 6SB2C and T1QUV with TRAC-BFl/v2001.2

International Nuclear Information System (INIS)

Analytis, G.Th.

2004-01-01

As part of the assessment of the frozen version of the PSU TRAC-BFl/v2001.2 and its qualification as a LB-LOCA and SB-LOCA code, in this work, we shall outline the comparisons between measurements and code predictions for three FIST tests: The LB-LOCA test 4DBA1, the SB-LOCA test 6SB2C and the failure to maintain water level test T1QUV. We shall study the effect of the number of axial levels in the active core as well as (in the case of the SB-LOCA test 6SB2C) the effect of the timing of the activation of the reflooding options/heat transfer package on the code predictions. Furthermore, we shall show that by using the upwinding option of some terms of the three-dimensional momentum equations, severe mass-error problems appearing in the analysis of the test T1QUV can be resolved. Generally, we shall show that although there are some differences between measurements and predictions, TRAC-BF1 captures quite well the overall behaviour of the LB-LOCA transient (depending on the number of axial nodes in the core) but underpredicts the rod surface temperatures of the SB-LOCA test 6SB2C

Synthesis and characterization of Bi{sub 1.56}Sb{sub 1.48}Co{sub 0.96}O{sub 7} pyrochlore sun-light-responsive photocatalyst

Energy Technology Data Exchange (ETDEWEB)

Naceur, Benhadria, E-mail: nacer1974@yahoo.fr [Laboratory of Inorganic Materials Chemistry and Application, Department of Materials Engineering, University of Science and Technology of Oran (USTO M.B), BP 1505, El M’naouar, 31000 Oran (Algeria); Abdelkader, Elaziouti, E-mail: elaziouti_a@yahoo.com [Laboratory of Inorganic Materials Chemistry and Application, Department of Materials Engineering, University of Science and Technology of Oran (USTO M.B), BP 1505, El M’naouar, 31000 Oran (Algeria); Dr Moulay Tahar University, Saida (Algeria); Nadjia, Laouedj, E-mail: nlaouedj@yahoo.fr [Laboratory of Inorganic Materials Chemistry and Application, Department of Materials Engineering, University of Science and Technology of Oran (USTO M.B), BP 1505, El M’naouar, 31000 Oran (Algeria); Dr Moulay Tahar University, Saida (Algeria); Sellami, Mayouf, E-mail: Mourad7dz@yahoo.fr [Laboratory of Inorganic Materials Chemistry and Application, Department of Materials Engineering, University of Science and Technology of Oran (USTO M.B), BP 1505, El M’naouar, 31000 Oran (Algeria); Noureddine, Bettahar, E-mail: nbettahar2001@yahoo.fr [Laboratory of Inorganic Materials Chemistry and Application, Department of Materials Engineering, University of Science and Technology of Oran (USTO M.B), BP 1505, El M’naouar, 31000 Oran (Algeria)

2016-02-15

Graphical abstract: Heterogeneous photo Fenton process with dye sensitized mechanism of RhB by Bi{sub 1.56}Sb{sub 1.48}Co{sub 0.96}O{sub 7} compound. - Highlights: • Bi{sub 1.56}Sb{sub 1.48}Co{sub 0.96}O{sub 7} (BSCO) catalyst was synthesized by improved solid state reaction method. • BSCO/H{sub 2}O{sub 2}/UVA and BSCO/H{sub 2}O{sub 2}/SL catalyst systems exhibit excellent photocatalytic activities for rhodamine B. • The photocatalytic degradation was preceded via heterogeneous photo Fenton mechanism process. • ·OH radicals are the main reactive species for the degradation of RhB. - Abstract: Novel nanostructure pyrochlore Bi{sub 1.56}Sb{sub 1.48}Co{sub 0.96}O{sub 7} was successfully synthesized via solid state reaction method in air. The as-synthesized photocatalyst was characterized by X-ray diffraction, Scanning electron microscopy and UV–vis diffuse reflectance spectroscopy techniques. The results showed that the BSCO was crystallized with the pyrochlore-type structure, cubic crystal system and space group Fd3m. The average particle size and band gap for BSCO were D = 76.29 nm and E{sub g} = 1.50 eV respectively. Under the optimum conditions for discoloration of the dye: initial concentration of 20 mg L{sup −1} RhB, pH 7, 25 °C, 0.5 mL H{sub 2}O{sub 2} and BSCO/dye mass ration of 1 g L{sup −1}, 97.77 and 90.16% of RhB were removed with BSCO/H{sub 2}O{sub 2} photocatalytic system within 60 min of irradiation time under UVA- and SL irradiations respectively. Pseudo-second-order kinetic model gave the best fit, with highest correlation coefficients (R{sup 2} ≥ 0.99). On the base of these results, the mechanism of the enhancement of the discoloration efficiency was discussed. .

Phase equilibria melt-solid in the systems Pb-InSb-CaSb and Pb-InCs-GaAs

International Nuclear Information System (INIS)

Grebenyuk, A.M.; Charykov, N.A.; Puchkov, L.V.

1992-01-01

Results of experimental investigation and thermodynamic calculation of fusibility curves of Pb-InSb-GaSb and Pb-InAs-GaAs thernary systems, which haven't been investigated earlier, are presented. Fusibility curves of Pb-InSb-GaSb and Pb-InAs-GaAs systems contain two crystallization fields: solid solutions of In x Ga 1-x Sb and Pb, In x Ga 1-x As and Pb. The latter fields are retained against Pb figurative point and conform to 582 K < T < 593 K crystallization temperatures

In Vivo Stabilized SB3, an Attractive GRPR Antagonist, for Pre- and Intra-Operative Imaging for Prostate Cancer.

Science.gov (United States)

Bakker, Ingrid L; van Tiel, Sandra T; Haeck, Joost; Doeswijk, Gabriela N; de Blois, Erik; Segbers, Marcel; Maina, Theodosia; Nock, Berthold A; de Jong, Marion; Dalm, Simone U

2018-03-19

The gastrin-releasing peptide receptor (GRPR), overexpressed on various tumor types, is an attractive target for receptor-mediated imaging and therapy. Another interesting approach would be the use of GRPR radioligands for pre-operative imaging and subsequent radio-guided surgery, with the goal to improve surgical outcome. GRPR radioligands were successfully implemented in clinical studies, especially Sarabesin 3 (SB3) is an appealing GRPR antagonist with high receptor affinity. Gallium-68 labeled SB3 has good in vivo stability, after labeling with Indium-111; however, the molecule shows poor in vivo stability, which negatively impacts tumor-targeting capacity. A novel approach to increase in vivo stability of radiopeptides is by co-administration of the neutral endopeptidase (NEP) inhibitor, phosphoramidon (PA). We studied in vivo stability and biodistribution of [ 111 In]SB3 without/with (-/+) PA in mice. Furthermore, SPECT/MRI on a novel, state-of-the-art platform was performed. GRPR affinity of SB3 was determined on PC295 xenograft sections using [ 125 I]Tyr 4 -bombesin with tracer only or with increasing concentrations of SB3. For in vivo stability, mice were injected with 200/2000 pmol [ 111 In]SB3 -/+ 300 μg PA. Blood was collected and analyzed. Biodistribution and SPECT/MRI studies were performed at 1, 4, and 24 h postinjection (p.i.) of 2.5 MBq/200 pmol or 25 MBq/200 pmol [ 111 In]SB3 -/+ 300 μg PA in PC-3-xenografted mice. SB3 showed high affinity for GRPR (IC 50 3.5 nM). Co-administration of PA resulted in twice higher intact peptide in vivo vs [ 111 In]SB3 alone. Biodistribution studies at 1, 4, and 24 h p.i. show higher tumor uptake values with PA co-administration (19.7 ± 3.5 vs 10.2 ± 1.5, 17.6 ± 5.1 vs 8.3 ± 1.1, 6.5 ± 3.3 vs 3.1 ± 1.9 % ID/g tissue (P < 0.0001)). Tumor imaging with SPECT/MRI clearly improved after co-injection of PA. Co-administration of PA increased in vivo tumor targeting capacity of

Characterization and complete genome sequence of a novel N4-like bacteriophage, pSb-1 infecting Shigella boydii.

Science.gov (United States)

Jun, Jin Woo; Yun, Sae Kil; Kim, Hyoun Joong; Chai, Ji Young; Park, Se Chang

2014-10-01

Shigellosis is one of major foodborne pathogens in both developed and developing countries. Although antibiotic therapy is considered an effective treatment for shigellosis, the imprudent use of antibiotics has led to the increase of multiple-antibiotic-resistant Shigella species globally. In this study, we isolated a virulent Podoviridae bacteriophage (phage), pSb-1, that infects Shigella boydii. One-step growth analysis revealed that this phage has a short latent period (15 min) and a large burst size (152.63 PFU/cell), indicating that pSb-1 has good host infectivity and effective lytic activity. The double-stranded DNA genome of pSb-1 is composed of 71,629 bp with a G + C content of 42.74%. The genome encodes 103 putative ORFs, 9 putative promoters, 21 transcriptional terminators, and one tRNA region. Genome sequence analysis of pSb-1 and comparative analysis with the homologous phage EC1-UPM, N4-like phage revealed that there is a high degree of similarity (94%, nucleotide sequence identity) between pSb-1 and EC1-UPM in 73 of the 103 ORFs of pSb-1. The results of this investigation indicate that pSb-1 is a novel virulent N4-like phage infecting S. boydii and that this phage might have potential uses against shigellosis. Copyright © 2014 Institut Pasteur. Published by Elsevier Masson SAS. All rights reserved.

Lower lattice thermal conductivity in SbAs than As or Sb monolayers: a first-principles study.

Science.gov (United States)

Guo, San-Dong; Liu, Jiang-Tao

2017-12-06

Phonon transport in group-VA element (As, Sb and Bi) monolayer semiconductors has been widely investigated in theory, and, of them, monolayer Sb (antimonene) has recently been synthesized. In this work, phonon transport in monolayer SbAs is investigated with a combination of first-principles calculations and the linearized phonon Boltzmann equation. It is found that the lattice thermal conductivity of monolayer SbAs is lower than those of both monolayer As and Sb, and the corresponding sheet thermal conductance is 28.8 W K -1 at room temperature. To understand the lower lattice thermal conductivity in monolayer SbAs than those in monolayer As and Sb, the group velocities and phonon lifetimes of monolayer As, SbAs and Sb are calculated. The calculated results show that the group velocities of monolayer SbAs are between those of monolayer As and Sb, but that the phonon lifetimes of SbAs are smaller than those of both monolayer As and Sb. Hence, the low lattice thermal conductivity in monolayer SbAs is attributed to very small phonon lifetimes. Unexpectedly, the ZA branch has very little contribution to the total thermal conductivity, only 2.4%, which is obviously different from those of monolayer As and Sb with very large contributions. This can be explained by very small phonon lifetimes for the ZA branch of monolayer SbAs. The lower lattice thermal conductivity of monolayer SbAs compared to that of monolayer As or Sb can be understood by the alloying of As (Sb) with Sb (As), which should introduce phonon point defect scattering. We also consider the isotope and size effects on the lattice thermal conductivity. It is found that isotope scattering produces a neglectful effect, and the lattice thermal conductivity with a characteristic length smaller than 30 nm can reach a decrease of about 47%. These results may offer perspectives on tuning the lattice thermal conductivity by the mixture of multiple elements for applications of thermal management and

KFeSbTe3: A quaternary chalcogenide aerogel for preferential adsorption of polarizable hydrocarbons and gases

KAUST Repository

Ahmed, Ejaz; Rothenberger, Alexander

2015-01-01

The first telluride-based quaternary aerogel KFeSbTe3 is synthesized by a sol-gel metathesis reaction between Fe(OAc)2 and K3SbTe3 in dimethyl formamide. The aerogel has an exceptionally large surface area 652 m2 g-1 which is amongst the highest

Crystalline-electric field of Pr(Os1-xRux)4Sb12

International Nuclear Information System (INIS)

Akita, H.; Yoshino, G.; Ochiai, A.

2006-01-01

High-quality single crystals of Pr(Os 1-x Ru x ) 4 Sb 12 were grown by the Sb self-flux method. Magnetic susceptibility χ(T) was measured precisely. The characteristic temperature T max , where χ(T) exhibits a maximum, varies as a function of Ru-content x but its functional form changes at around x=0.6 where competition of two types of superconductivity is suggested. Since T max is thought to be relevant to the splitting energy between a ground state and a first excited state, we analyzed χ(T) considering the crystalline electric field (CEF) of the T h symmetry. χ(T) is well fitted assuming a Γ 1 singlet ground state for all x values. As expected from T max , the energy of the first excited state (Γ 4 (2) ) changes its functional form at around x=0.6. Furthermore, the energies of the second and third excited states (Γ 4 (1) and Γ 23 ) exhibit a minimum at almost the same value of x=0.6. These results suggest that the CEF is related to the superconductivity in Pr(Os 1-x Ru x ) 4 Sb 12

Temperature dependence of thermal properties of Ag8In14Sb55Te23 phase-change memory materials

International Nuclear Information System (INIS)

Jiao, Xinbing; Gan, Fuxi; Wei, Jingsong; Xiao, Mufei

2009-01-01

The dependence of thermal properties of Ag 8 In 14 Sb 55 Te 23 phase-change memory materials in crystalline and amorphous states on temperature was measured and analyzed. The results show that in the crystalline state, the thermal properties monotonically decrease with the temperature and present obvious crystalline semiconductor characteristics. The heat capacity, thermal diffusivity, and thermal conductivity decrease from 0.35 J/gK, 1.85 mm 2 /s, and 4.0 W/mK at 300 K to 0.025 J/gK, 1.475 mm 2 /s, and 0.25 W/mK at 600 K, respectively. In the amorphous state, while the dependence of thermal properties on temperature does not present significant changes, the materials retain the glass-like thermal characteristics. Within the temperature range from 320 K to 440 K, the heat capacity fluctuates between 0.27 J/gK and 0.075 J/gK, the thermal diffusivity basically maintains at 0.525 mm 2 /s, and the thermal conductivity decreases from 1.02 W/mK at 320 K to 0.2 W/mK at 440 K. Whether in the crystalline or amorphous state, Ag 8 In 14 Sb 55 Te 23 are more thermally active than Ge 2 Sb 2 Te 5 , that is, the Ag 8 In 14 Sb 55 Te 23 composites bear stronger thermal conduction and diffusion than the Ge 2 Sb 2 Te 5 phase-change memory materials. (orig.)

Hard magnetic off-stoichiometric (Fe,Sb){sub 2+x}Hf{sub 1-x} intermetallic phase

Energy Technology Data Exchange (ETDEWEB)

Goll, D.; Gross, T.; Loeffler, R.; Pflanz, U.; Vogel, T.; Kopp, A.; Grubesa, T.; Schneider, G. [Aalen University, Materials Research Institute (Germany)

2017-09-15

By high-throughput screening the ternary Fe-Hf-Sb system, off-stoichiometric (Fe,Sb){sub 2+x}Hf{sub 1-x} with a composition of Fe60.0-Hf26.5-Sb13.5 with high potential as hard magnetic phase is discovered. By quantitative domain structure analysis, promising intrinsic properties of J{sub s} ∝ 1 T, K{sub 1} ∝ 1.5 MJ m{sup -3} are found at room temperature. By magnetometry, bulk intrinsic properties of J{sub s} ∝ 0.7 T, K{sub 1} ∝ 1.4 MJ m{sup -3} are found. Alloying elements like Co or Mn turns out to be an effective adjusting screw on the crystal structure and ferromagnetic behavior. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Pressure dependence of resistivity and magnetic properties in a Mn1.9Cr0.1Sb alloy

Directory of Open Access Journals (Sweden)

D. V. Maheswar Repaka

2017-12-01

Full Text Available We report magnetic-field and hydrostatic pressure dependent electrical resistivity and magnetic properties of a Mn1.9Cr0.1Sb alloy. Upon cooling, the magnetization of Mn1.9Cr0.1Sb exhibits a first-order ferrimagnetic to antiferromagnetic transition at the exchange inversion temperature, TS = 261 K under a 0.1 T magnetic field. Our experimental results show that TS decreases with increasing magnetic field but increase with increasing hydrostatic pressure. The pressure induced transition is accompanied by a large positive baro-resistance of 30.5% for a hydrostatic pressure change of 0.69 GPa. These results show that the lattice parameters as well as the bond distance between Mn-Mn atoms play a crucial role in the magnetic and electronic transport properties of Mn1.9Cr0.1Sb. This sample also exhibits a large inverse magnetocaloric effect with a magnetic entropy change of ΔSm = +6.75 J/kg.K and negative magnetoresistance (44.5% for a field change of 5 T at TS in ambient pressure which may be useful for magnetic cooling and spintronics applications.

Roles of Cu in the Enhanced Thermoelectric Properties in Bi0.5Sb1.5Te3

Directory of Open Access Journals (Sweden)

Feng Hao

2017-03-01

Full Text Available Recently, Cu-containing p-type Bi0.5Sb1.5Te3 materials have shown high thermoelectric performances and promising prospects for practical application in low-grade waste heat recovery. However, the position of Cu in Bi0.5Sb1.5Te3 is controversial, and the roles of Cu in the enhancement of thermoelectric performance are still not clear. In this study, via defects analysis and stability test, the possibility of Cu intercalation in p-type Bi0.5Sb1.5Te3 materials has been excluded, and the position of Cu is identified as doping at the Sb sites. Additionally, the effects of Cu dopants on the electrical and thermal transport properties have been systematically investigated. Besides introducing additional holes, Cu dopants can also significantly enhance the carrier mobility by decreasing the Debye screen length and weakening the interaction between carriers and phonons. Meanwhile, the Cu dopants interrupt the periodicity of lattice vibration and bring stronger anharmonicity, leading to extremely low lattice thermal conductivity. Combining the suppression on the intrinsic excitation, a high thermoelectric performance—with a maximum thermoelectric figure of merit of around 1.4 at 430 K—has been achieved in Cu0.005Bi0.5Sb1.495Te3, which is 70% higher than the Bi0.5Sb1.5Te3 matrix.

Preclinical and first clinical experience with the gastrin-releasing peptide receptor-antagonist [{sup 68}Ga]SB3 and PET/CT

Energy Technology Data Exchange (ETDEWEB)

Maina, Theodosia; Charalambidis, David; Nock, Berthold A. [INRASTES, NCSR ' ' Demokritos' ' , Molecular Radiopharmacy, Athens (Greece); Bergsma, Hendrik; Krenning, Eric P. [Erasmus MC, Department of Nuclear Medicine, Rotterdam (Netherlands); Kulkarni, Harshad R.; Mueller, Dirk; Baum, Richard P. [Zentralklinik, Molecular Radiotherapy and Molecular Imaging, Bad Berka (Germany); Jong, Marion de [Erasmus MC, Department of Nuclear Medicine, Rotterdam (Netherlands); Erasmus MC, Department of Radiology, Rotterdam (Netherlands)

2016-05-15

Gastrin-releasing peptide receptors (GRPR) represent attractive targets for tumor diagnosis and therapy because of their overexpression in major human cancers. Internalizing GRPR agonists were initially proposed for prolonged lesion retention, but a shift of paradigm to GRPR antagonists has recently been made. Surprisingly, radioantagonists, such as [{sup 99m}Tc]DB1 ({sup 99m}Tc-N{sub 4}'-DPhe{sup 6},Leu-NHEt{sup 13}BBN(6-13)), displayed better pharmacokinetics than radioagonists, in addition to their higher inherent biosafety. We introduce here [{sup 68}Ga]SB3, a [{sup 99m}Tc]DB1 mimic-carrying, instead of the {sup 99m}Tc-binding tetraamine, the chelator DOTA for labeling with the PET radiometal {sup 68}Ga. Competition binding assays of SB3 and [{sup nat}Ga]SB3 were conducted against [{sup 125}I-Tyr{sup 4}]BBN in PC-3 cell membranes. Blood samples collected 5 min postinjection (pi) of the [{sup 67}Ga]SB3 surrogate in mice were analyzed using high-performance liquid chromatography (HPLC) for degradation products. Likewise, biodistribution was performed after injection of [{sup 67}Ga]SB3 (37 kBq, 100 μL, 10 pmol peptide) in severe combined immunodeficiency (SCID) mice bearing PC-3 xenografts. Eventually, [{sup 68}Ga]SB3 (283 ± 91 MBq, 23 ± 7 nmol) was injected into 17 patients with breast (8) and prostate (9) cancer. All patients had disseminated disease and had received previous therapies. PET/CT fusion images were acquired 60-115 min pi. SB3 and [{sup nat}Ga]SB3 bound to the human GRPR with high affinity (IC{sub 50}: 4.6 ± 0.5 nM and 1.5 ± 0.3 nM, respectively). [{sup 67}Ga]SB3 displayed good in vivo stability (>85 % intact at 5 min pi). [{sup 67}Ga]SB3 showed high, GRPR-specific and prolonged retention in PC-3 xenografts (33.1 ± 3.9%ID/g at 1 h pi - 27.0 ± 0.9%ID/g at 24 h pi), but much faster clearance from the GRPR-rich pancreas (∼160%ID/g at 1 h pi to <17%ID/g at 24 h pi) in mice. In patients, [{sup 68}Ga]SB3 elicited no adverse effects and

Electric Properties of Pb(Sb1/2Nb1/2)O3 PbTiO3 PbZrO3 Ceramics

Science.gov (United States)

Kawamura, Yasushi; Ohuchi, Hiromu

1994-09-01

Solid-solution ceramics of ternary system xPb(Sb1/2Nb1/2)O3 yPbTiO3 zPbZrO3 were prepared by the solid-state reaction of powder materials. Ceramic, electric, dielectric and piezoelectric properties and crystal structures of the system were studied. Sintering of the system xPb(Sb1/2Nb1/2)O3 yPbTiO3 zPbZrO3 is much easier than that of each end composition, and well-sintered high-density ceramics were obtained for the compositions near the morphotropic transformation. Piezoelectric ceramics with high relative dielectric constants, high radial coupling coefficient and low resonant resistance were obtained for the composition near the morphotropic transformation. The composition Pb(Sb1/2Nb1/2)0.075Ti0.45Zr0.475O3 showed the highest dielectric constant (ɛr=1690), and the composition Pb(Sb1/2Nb1/2)0.05Ti0.45Zr0.5O3 showed the highest radial coupling coefficient (kp=64%).

AgSb(S{sub x}Se{sub 1−x}){sub 2} thin films for solar cell applications

Energy Technology Data Exchange (ETDEWEB)

González, J.O. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León 66450, México (Mexico); Shaji, S.; Avellaneda, D. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León 66450, México (Mexico); Universidad Autónoma de Nuevo León-CIIDIT, Apodaca, Nuevo León, México (Mexico); Castillo, A.G.; Roy, T.K. Das [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León 66450, México (Mexico); and others

2013-05-15

Highlights: ► AgSb(S{sub x}Se{sub 1−x}){sub 2} thin films were formed by heating Na{sub 2}SeSO{sub 3} dipped Sb{sub 2}S{sub 3}/Ag layers. ► S/Se ratio was varied by changing the dipping time in Na{sub 2}SeSO{sub 3} solution. ► Characterized the films using XRD, XPS, SEM, Optical and electrical measurements. ► Band gap engineering of 1−1.1 eV for x = 0.51 and 0.52 respectively. ► PV Glass/FTO/CdS/AgSb(S{sub x}Se{sub 1−x}){sub 2}/C were prepared showing V{sub oc} = 410 mV, J{sub sc} = 5.7 mA/cm{sup 2}. - Abstract: Silver antimony sulfoselenide (AgSb(S{sub x}Se{sub 1−x}){sub 2}) thin films were prepared by heating glass/Sb{sub 2}S{sub 3}/Ag layers after selenization using sodium selenosulphate solution. First, Sb{sub 2}S{sub 3} thin films were deposited on glass substrates from a chemical bath containing SbCl{sub 3} and Na{sub 2}S{sub 2}O{sub 3}. Then Ag thin films were thermally evaporated onto glass/Sb{sub 2}S{sub 3}, followed by selenization by dipping in an acidic solution of Na{sub 2}SeSO{sub 3}. The duration of selenium dipping was varied as 30 min and 2 h. The heating condition was at 350 °C for 1 h in vacuum. Analysis of X-ray diffraction pattern of the thin films formed after heating showed the formation of AgSb(S{sub x}Se{sub 1−x}){sub 2}. Morphology and elemental analysis were done by scanning electron microscopy and energy dispersive X-ray detection. Depth profile of composition of the thin films was performed by X-ray Photoelectron Spectroscopy. The spectral study showed the presence of Ag, Sb, S, and Se, and the corresponding binding energy analysis confirmed the formation of AgSb(S{sub x}Se{sub 1−x}){sub 2}. Photovoltaic structures (PV) were prepared using AgSb(S{sub x}Se{sub 1−x}){sub 2} thin films as absorber and CdS thin films as window layers on FTO coated glass substrates. The PV structures were heated at 60–80 °C in air for 1 h to improve ohmic contact. Analysis of J–V characteristics of the PV structures showed V

Electrochemical performance of Sn-Sb-Cu film anodes prepared by layer-by-layer electrodeposition

International Nuclear Information System (INIS)

Jiang Qianlei; Xue Ruisheng; Jia Mengqiu

2012-01-01

A novel layer-by-layer electrodeposition and heat-treatment approach was attempted to obtain Sn-Sb-Cu film anode for lithium ion batteries. The preparation of Sn-Sb-Cu anodes started with galvanostatic electrochemically depositing antimony and tin sequentially on the substrate of copper foil collector. Sn-Sb and Cu-Sb alloys were formed when heated. The SEM analysis showed that the crystalline grains become bigger and the surface of the Sn-Sb-Cu anode becomes more denser after annealing. The energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD) analysis showed the antimony, tin and copper were alloyed to form SnSb and Cu 2 Sb after heat treatment. The X-ray photoelectron spectroscopy (XPS) analysis showed the surface of the Sn-Sb-Cu electrode was covered by a thin oxide layer. Electrochemical measurements showed that the annealed Sn-Sb-Cu anode has high reversible capacity and good capacity retention. It exhibited a reversible capacity of about 962 mAh/g in the initial cycle, which still remained 715 mAh/g after 30 cycles.

Fe-Doping Effect on Thermoelectric Properties of p-Type Bi0.48Sb1.52Te3

Directory of Open Access Journals (Sweden)

Hyeona Mun

2015-03-01

Full Text Available The substitutional doping approach has been shown to be an effective strategy to improve ZT of Bi2Te3-based thermoelectric raw materials. We herein report the Fe-doping effects on electronic and thermal transport properties of polycrystalline bulks of p-type Bi0.48Sb1.52Te3. After a small amount of Fe-doping on Bi/Sb-sites, the power factor could be enhanced due to the optimization of carrier concentration. Additionally, lattice thermal conductivity was reduced by the intensified point-defect phonon scattering originating from the mass difference between the host atoms (Bi/Sb and dopants (Fe. An enhanced ZT of 1.09 at 300 K was obtained in 1.0 at% Fe-doped Bi0.48Sb1.52Te3 by these synergetic effects.

Structure determination of Ga As (110) p (1 x 1) - Sb using scanned-energy photoelectron diffraction

International Nuclear Information System (INIS)

Ascolani, H.; Asensio, M.C.; Fritzsche, W.

1996-01-01

Photoelectron diffraction (PD) in the scanned-energy mode has proven to be a powerfull tool for structural determination of the first few surface layers. The scanned-energy mode involves the measurement of the intensity of photoelectrons emitted from a core level as a function of the incident photon energy for different emission directions. The atom specificity of PD allows the investigation of the local structure of adsorbed atoms without interference of the substrate. In addition, if a measurable chemical shift exists, this technique is also able to discriminate between atoms of the same species adsorbed in inequivalent sites. The Ga As (110) p (1x1)-Sb (1 ML) surface represents a prototype system to study atom adsorption on III-V semiconductors. The epitaxial continued layer structure (ECLS) is generally accepted as the geometry corresponding to this surface, although some authors have claimed that the p 3 model forms a stable geometry equivalent to the ECLS, and that it provides an equally good description of their experimental results. So far, the conclusions about the atomic structure of this surface had been derived on the basis of indirect methods. This work exploits to the utmost the possibilities of analysis offered by the scanned-energy PD technique, namely, chemical shift analysis and direct inversion. The energy spectrum of Sb-4d photoelectrons emitted from the Ga As (110)-p (1x1) Sb surface has two chemically-shifted components. We have inverted the scanned-energy photoelectron diffraction data corresponding to these two components to obtain the positions of the Ga and As atoms which are nearest neighbors of two inequivalent Sb atoms. Our results contradict various models proposed for this surface and are consistent only with the ECLS. For a more detailed atomic structure determination, the best fit between experiment and multiple-scattering calculations was determined by a trial-and-error procedure. (author)

Electronic and magnetic properties of SmCrSb3 and GdCrSb3: A first principles study

International Nuclear Information System (INIS)

Sandeep; Ghimire, M.P.; Thapa, R.K.

2011-01-01

The density of states (DOS) and the magnetic moments of SmCrSb 3 and GdCrSb 3 have been studied by first principles full-potential linearized augmented plane wave (FP-LAPW) method based on density functional theory (DFT). For the exchange-correlation potential, the local-spin density approximations with correlation energy (LSDA+U) method have been used. Total and partial DOS have been computed using the WIEN2k code. DOS result shows the exchange-splittings of Cr-3d and rare-earth (R) 4f states electrons, which are responsible for the ground state ferromagnetic (FM) behavior of the systems. The FM behavior of these systems is strongly influenced by the average number of Cr-3d and Sm (Gd) 4f-electrons. The effective moment of SmCrSb 3 is found to be 7.07 μ B while for GdCrSb 3 it is 8.27 μ B . The Cr atom plays a significant role on the magnetic properties due to the hybridization between Cr-3d and Sb-5p states. - Highlights: → DOS and the magnetic moments of SmCrSb 3 and GdCrSb 3 are studied by full-FP-LAPW method. → Exchange splitting of eg and t2g of Cr-3d states and the rare-earth 4f state electrons are responsible for ground state ferromagnetism. → Rare-earth magnetic moments are greater than Cr moment indicating presence of 4f states.

Oral administration of the 5-HT6 receptor antagonists SB-357134 and SB-399885 improves memory formation in an autoshaping learning task.

Science.gov (United States)

Perez-García, Georgina; Meneses, Alfredo

2005-07-01

In this work we aimed to re-examine the 5-HT6 receptor role, by testing the selective antagonists SB-357134 (1-30 mg/kg p.o.) and SB-399885 (1-30 mg/kg p.o.) during memory consolidation of conditioned responses (CR%), in an autoshaping Pavlovian/instrumental learning task. Bioavailability, half-life and minimum effective dose to induce inappetence for SB-357134 were 65%, 3.4 h, and 30 mg/kg p.o., and for SB-399885 were 52%, 2.2 h, and 50 mg/kg p.o., respectively. Oral acute and chronic administration of either SB-357134 or SB-399885 improved memory consolidation compared to control groups. Acute administration of SB-357134, at 1, 3, 10 and 30 mg/kg, produced a CR% inverted-U curve, eliciting the latter dose a 7-fold increase relative to saline group. Acute injection of SB-399885 produced significant CR% increments, being 1 mg/kg the most effective dose. Repeated administration (7 days) of either SB-357134 (10 mg/kg) or SB-399885 (1 mg/kg) elicited the most significant CR% increments. Moreover, modeling the potential therapeutic benefits of 5-HT6 receptor blockade, acute or repeated administration of SB-399885, at 10 mg/kg reversed memory deficits produced by scopolamine or dizocilpine, and SB-357134 (3 and 10 mg/kg) prevented amnesia and even improved performance. These data support the notion that endogenously 5-HT acting, via 5-HT6 receptor, improves memory consolidation.

Cloning and characterization of the Salicornia brachiata Na(+)/H(+) antiporter gene SbNHX1 and its expression by abiotic stress.

Science.gov (United States)

Jha, Anupama; Joshi, Mukul; Yadav, Narendra Singh; Agarwal, Pradeep K; Jha, Bhavanath

2011-03-01

Salinity causes multifarious adverse effects to plants. Plants response to salt stress involves numerous processes that function in coordination to alleviate both cellular hyperosmolarity and ion disequilibrium. A Na(+)/H(+) antiporter NHX1 gene has been isolated from a halophytic plant Salicornia brachiata in this study. Predicted amino acid sequence similarity, protein topology and the presence of functional domains conserved in SbNHX1 classify it as a plant vacuolar NHX gene. The SbNHX1 cDNA has an open reading frame of 1,683 bp, encoding a polypeptide of 560 amino acid residues with an estimated molecular mass 62.44 kDa. The SbNHX1 shows high amino acid similarity with other halophytic NHX gene and belongs to Class-I type NHXs. TMpred suggests that SbNHX1 contains 11 strong transmembrane (TM). Real time PCR analysis revealed that SbNHX1 transcript expresses maximum at 0.5 M. Transcript increases gradually by increasing the treatment duration at 0.5 M NaCl, however, maximum expression was observed at 48 h. The overexpression of SbNHX1 gene in tobacco plant showed NaCl tolerance. This study shows that SbNHX1 is a potential gene for salt tolerance, and can be used in future for developing salt tolerant crops.

Raman spectra, microstructure and superconducting properties of Sb(III)-YBCO composite superconductor

Energy Technology Data Exchange (ETDEWEB)

Elsabawy, Khaled M. [Chemistry Department, Faculty of Science, Tanta University, Tanta (Egypt)]. E-mail: ksabawy@yahoo.com

2005-11-15

The pure YBCO (YBa{sub 2}Cu{sub 3}O{sub 7}) and its variant antimony containing composites with general formula; Y{sub 1+x}Sb {sub x}Ba{sub 2}Cu{sub 3}O {sub z}, where x = 0.1, 0.2, 0.4 and 0.6 mol%, respectively, were prepared by the solid-state reaction route. X-ray measurements indicated that Sb{sup 3+} ions have a negligible effect on the main crystalline structure and substitutes Y-sites successfully in lattice structure of 123-YBCO at low concentrations of doping (x = 0.1 {sup {yields}} 0.2). From SE-microscopy mapping and EDX elemental analysis, Sb{sup 3+} was detected qualitatively with good approximation to the actual molar ratio but not observed at 123-YBCO grain boundaries which confirm that antimony (III) has diffused regularly into material bulk of superconducting 123-YBCO-phase at low concentrations. Additions of Sb(III) affected sharply on the main vibrating modes of YBCO regime particularly, on the apical oxygen (O{sub 4}) vibrational mode A {sub 1g}. Magnetic susceptibility measurements proved that antimony oxide additions have slight effect on the transport properties of YBCO-composites regime.

Synthesis and electrochemistry properties of Sn-Sb ultrafine particles as anode of lithium-ion batteries

International Nuclear Information System (INIS)

Wang, Zhong; Tian, Wenhuai; Li, Xingguo

2007-01-01

Ultrafine particles of Sn-Sb alloys with different chemical composition have been prepared by hydrogen plasma-metal reaction. Structure, morphology, size and chemical composition of the Sn-Sb ultrafine particles were investigated by transmission electron microscopy, X-ray diffraction, BET gas adsorption, and induction-coupled plasma spectroscopy. It was found that all the particles have spherical shapes, with average particle size in the range of 100-300 nm. The electrochemistry properties as an alternative anode material for lithium-ion batteries have been characterized by constant current cycling and cyclic voltammetry. Electrochemical measurements showed that the alloys with Sn-46.5 at.% Sb have best reversible capacity and capacity retention. It exhibited a high reversible lithium-ion storage capacity of 701 mAh g -1 in the initial cycle, which has remained at 81% (i.e., 566 mAh g -1 ) of its original capacity after 20 cycles

The use of hogdahl convention k0 neutron activation analysis (NAA) standardization method and atomic absortion spectroscopy (ASS) for determination of toxic elements in foodstuffs

International Nuclear Information System (INIS)

Ahiamadie, H.

2008-06-01

Copper, cadmium, tin, chromium, arsenic, antimony, vanadium and mercury contents were determined in various foodstuffs (Mussa paradisiaca (plantains), Manihot esculentus (cassavas), Vantosoma sagittifolium (cocoyam). Vantosoma sagittifolium leaves (kontomire), Lycopersicum esculentus (tomatoes), Capsicum species (peppers), Solanum melongena (garden eggs), Nbelmoschus esculentus (okro), and Colocasia esculenta (kooko or taro)) produced in the Wassa West District, Ghana. These plants are the basis of human nutrition in the study area. These elements were determined using Hogdahl convention k 0 Instrumental Neutron Activation Analysis (NAA) Standardization Method and Atomic Absorption Spectroscopy (AAS). The elements in the various foodstuffs and their concentration ranges were Cu (16.87-180.06) mg/kg, As (2.68-9.84) µg/g, Cd (0.63-5.64) µg/g, Hg (0.01-67) ng/g, Cr (0.03-3.66) µg/g, Sb (1.1- 18.6) ng/g, Sn (3.4-58.4) ng/g, and V (12-99) ng/g. The study showed that there are high levels of toxic elements in the foodstuffs grown in the mining areas as compared to that of the non-mining area (i.e., control area). This could be attributed to gold mines pollution. Compared to the World Health Organization (WHO) permissible levels of toxic elements in foods, Cu, Cr and Hg were above the permissible levels whereas the concentrations of As, Cd. Sb, Sn and V fall within the permissible levels. (au)

Formation Mechanism of Self Assembled Horizontal ErSb Nanowires Embedded in a GaSb(001) Matrix

Science.gov (United States)

Wilson, Nathaniel; Kraemer, Stephan; PalmstrøM, Chris

The ErxGa1-xSb exhibits a variety of self-assembling nanostructures. In order to harness these nanostructures for use in devices and other material systems it is important to understand their formation. We have characterized the growth mechanism of self-assembled horizontal ErSb nanowires in a GaSb(001) matrix through the use of in-situ Scanning Tunneling Microscopy (STM) as well as ex-situ Transmission Electron Microscopy (TEM). We observe large GaSb macrosteps on the growth surface of Er.3Ga.7Sb samples. The areas near the ledge and base of the macrosteps show significant differences in size and distribution of ErSb nanowires. Results suggest that the formation of macrosteps drives the transition from vertical to horizontal nanowires in the ErxGa1-xSb system. We also observe a low temperature growth mode, which results in horizontal nanowire formation under a wide range of flux conditions. This new growth mode does not exhibit the embedded growth observed in the formation of nanowires at higher temperatures and may allow for horizontal nanowire formation without the presence of macrosteps, as well as the formation of smaller nanoparticles which may be useful for achieving smaller nanoparticle dimensions and electron confinement effects. This work was supported by NSF-DMR under 1507875.

[Replication of Streptomyces plasmids: the DNA nucleotide sequence of plasmid pSB 24.2].

Science.gov (United States)

Bolotin, A P; Sorokin, A V; Aleksandrov, N N; Danilenko, V N; Kozlov, Iu I

1985-11-01

The nucleotide sequence of DNA in plasmid pSB 24.2, a natural deletion derivative of plasmid pSB 24.1 isolated from S. cyanogenus was studied. The plasmid amounted by its size to 3706 nucleotide pairs. The G-C composition was equal to 73 per cent. The analysis of the DNA structure in plasmid pSB 24.2 revealed the protein-encoding sequence of DNA, the continuity of which was significant for replication of the plasmid containing more than 1300 nucleotide pairs. The analysis also revealed two A-T-rich areas of DNA, the G-C composition of which was less than 55 per cent and a DNA area with a branched pin structure. The results may be of value in investigation of plasmid replication in actinomycetes and experimental cloning of DNA with this plasmid as a vector.

Neuron-NG2 Cell Synapses: Novel Functions for Regulating NG2 Cell Proliferation and Differentiation

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Qian-Kun Yang

2013-01-01

Full Text Available NG2 cells are a population of CNS cells that are distinct from neurons, mature oligodendrocytes, astrocytes, and microglia. These cells can be identified by their NG2 proteoglycan expression. NG2 cells have a highly branched morphology, with abundant processes radiating from the cell body, and express a complex set of voltage-gated channels, AMPA/kainate, and GABA receptors. Neurons notably form classical and nonclassical synapses with NG2 cells, which have varied characteristics and functions. Neuron-NG2 cell synapses could fine-tune NG2 cell activities, including the NG2 cell cycle, differentiation, migration, and myelination, and may be a novel potential therapeutic target for NG2 cell-related diseases, such as hypoxia-ischemia injury and periventricular leukomalacia. Furthermore, neuron-NG2 cell synapses may be correlated with the plasticity of CNS in adulthood with the synaptic contacts passing onto their progenies during proliferation, and synaptic contacts decrease rapidly upon NG2 cell differentiation. In this review, we highlight the characteristics of classical and nonclassical neuron-NG2 cell synapses, the potential functions, and the fate of synaptic contacts during proliferation and differentiation, with the emphasis on the regulation of the NG2 cell cycle by neuron-NG2 cell synapses and their potential underlying mechanisms.

Production of 122Sb for the study of environmental pollution

International Nuclear Information System (INIS)

Mahdi Sadeghi; Mohammadreza Aboudzadeh; Parvin Sarabadani; Milad Enferadi

2011-01-01

This article presents, 122 Sb (T 1/2 = 2.723 days, I β- 97.59%) was produced via the nat Sn(p,xn) nuclear process at the AMIRS (Cyclone-30, IBA, Belgium). The electrodeposition experiments were carried out by potassium stannate trihydrate (K 2 Sn(OH) 6 ) and potassium hydroxide. The optimum conditions of the electrodeposition of tin were as follows: 40 g/L nat Sn, 20 g/L KOH, 115 g/L K 2 Sn(OH) 6 , DC current density of 5 A/dm 2 with a bath temperature of 75 deg C. The electroplated Tin-target was irradiated with 26.5 MeV protons at current of 180 μA for 20 min. Solvent extraction of no-carrier-added 122 Sb from irradiated Tin-natural target hydrochloric solution was investigated using di-n-butyl ether (C 8 H 18 O). Yields of about 3.61 MBq/μAh were experimentally obtained. (author)

Electrodeposition and electrochemical characterisation of thick and thin coatings of Sb and Sb/Sb2O3 particles for Li-ion battery anodes

International Nuclear Information System (INIS)

Bryngelsson, Hanna; Eskhult, Jonas; Edstroem, Kristina; Nyholm, Leif

2007-01-01

The possibilities to electrodeposit thick coatings composed of nanoparticles of Sb and Sb 2 O 3 for use as high-capacity anode materials in Li-ion batteries have been investigated. It is demonstrated that the stability of the coatings depends on their Sb 2 O 3 concentrations as well as microstructure. The electrodeposition reactions in electrolytes with different pH and buffer capacities were studied using chronopotentiometry and electrochemical quartz crystal microbalance measurements. The obtained deposits, which were characterised with XRD and SEM, were also tested as anode materials in Li-ion batteries. The influence of the pH and buffer capacity of the deposition solution on the composition and particle size of the deposits were studied and it is concluded that depositions from a poorly buffered solution of antimony-tartrate give rise to good anode materials due to the inclusion of precipitated Sb 2 O 3 nanoparticles in the Sb coatings. Depositions under conditions yielding pure Sb coatings give rise to deposits composed of large crystalline particles with poor anode stabilities. The presence of a plateau at about 0.8 V versus Li + /Li due to SEI forming reactions and the origin of another plateau at about 0.4 V versus Li + /Li seen during the lithiation of thin Sb coatings are also discussed. It is demonstrated that the 0.4 V plateau is present for Sb coatings for which the (0 1 2) peak is the main peak in the XRD diffractogram

Defect-induced magnetic structure of CuMnSb

Czech Academy of Sciences Publication Activity Database

Máca, František; Kudrnovský, Josef; Drchal, Václav; Turek, I.; Stelmakhovych, O.; Beran, Přemysl; Llobet, A.; Martí, Xavier

2016-01-01

Roč. 94, č. 9 (2016), 1-9, č. článku 094407. ISSN 2469-9950 R&D Projects: GA ČR GB14-37427G Institutional support: RVO:68378271 ; RVO:61389005 Keywords : CuMnSb * electronic structure * defects * magnetic order * ab initio calculations * neutron diffraction analysis Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.836, year: 2016

[Sb{sub 4}Au{sub 4}Sb{sub 4}]{sup 2−}: A designer all-metal aromatic sandwich

Energy Technology Data Exchange (ETDEWEB)

Tian, Wen-Juan; You, Xue-Rui [Nanocluster Laboratory, Institute of Molecular Science, Shanxi University, Taiyuan 030006 (China); Guo, Jin-Chang [Department of Chemistry, Xinzhou Teachers University, Xinzhou 034000 (China); Li, Da-Zhi, E-mail: hj.zhai@sxu.edu.cn, E-mail: ldz005@126.com [Department of Chemical Engineering, Binzhou University, Binzhou 256603 (China); Wang, Ying-Jin [Nanocluster Laboratory, Institute of Molecular Science, Shanxi University, Taiyuan 030006 (China); Department of Chemistry, Xinzhou Teachers University, Xinzhou 034000 (China); Sun, Zhong-Ming [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Zhai, Hua-Jin, E-mail: hj.zhai@sxu.edu.cn, E-mail: ldz005@126.com [Nanocluster Laboratory, Institute of Molecular Science, Shanxi University, Taiyuan 030006 (China); State Key Laboratory of Quantum Optics and Quantum Optics Devices, Shanxi University, Taiyuan 030006 (China)

2016-07-28

We report on the computational design of an all-metal aromatic sandwich, [Sb{sub 4}Au{sub 4}Sb{sub 4}]{sup 2−}. The triple-layered, square-prismatic sandwich complex is the global minimum of the system from Coalescence Kick and Minima Hopping structural searches. Following a standard, qualitative chemical bonding analysis via canonical molecular orbitals, the sandwich complex can be formally described as [Sb{sub 4}]{sup +}[Au{sub 4}]{sup 4−}[Sb{sub 4}]{sup +}, showing ionic bonding characters with electron transfers in between the Sb{sub 4}/Au{sub 4}/Sb{sub 4} layers. For an in-depth understanding of the system, one needs to go beyond the above picture. Significant Sb → Au donation and Sb ← Au back-donation occur, redistributing electrons from the Sb{sub 4}/Au{sub 4}/Sb{sub 4} layers to the interlayer Sb–Au–Sb edges, which effectively lead to four Sb–Au–Sb three-center two-electron bonds. The complex is a system with 30 valence electrons, excluding the Sb 5s and Au 5d lone-pairs. The two [Sb{sub 4}]{sup +} ligands constitute an unusual three-fold (π and σ) aromatic system with all 22 electrons being delocalized. An energy gap of ∼1.6 eV is predicted for this all-metal sandwich. The complex is a rare example for rational design of cluster compounds and invites forth-coming synthetic efforts.

Soluble HLA-G in pregnancies complicated by autoimmune rheumatic diseases.

Science.gov (United States)

Beneventi, Fausta; Badulli, Carla; Locatelli, Elena; Caporali, Roberto; Ramoni, Véronique; Cavagnoli, Chiara; Simonetta, Margherita; Garbin, Giulia; Tinelli, Carmine; Alpini, Claudia; Montecucco, CarloMaurizio; Martinetti, Miryam; Spinillo, Arsenio

2015-08-01

Autoimmune rheumatic diseases in pregnancies are associated with increased adverse obstetric outcomes. We compared maternal soluble human leucocyte antigen-G (sHLA-G) blood levels in subjects with a rheumatic disease preexisting pregnancy and unaffected controls. Third-trimester blood maternal sHLA-G concentrations were significantly higher in subjects with rheumatic diseases than in controls (mean 93.1ng/ml [SD 42.1] vs 58.1ng/ml [SD 96.3], p=0.003). Cord blood sHLA-G concentrations were significantly higher in rheumatic disease than in those born to control mothers (median 41.2ng/ml [IQR: 3.3-44.0] vs 17.9ng/ml [IQR: 17.2-88.1], p=0.007). A strict positive correlation (r=0.88, prheumatic disease DEL/DEL homozygous for a polymorphism of the 3' untranslated regulatory region of HLA-G (HLA-G 14bp) than in the corresponding healthy controls (mean values 141.5ng/ml [SD: 166] vs 54.2ng/ml [SD: 35], p=0.009). Increasing maternal and cord blood levels of s-HLA-G concentrations among pregnant subjects with rheumatic diseases compared with controls suggest that autoimmune diseases prompt a maternal and fetal immune response that favors pregnancy immune tolerance. Copyright © 2015 Elsevier Ireland Ltd. All rights reserved.

Self-diffusion in 69Ga121Sb/71Ga123Sb isotope heterostructures

Science.gov (United States)

Bracht, H.; Nicols, S. P.; Haller, E. E.; Silveira, J. P.; Briones, F.

2001-05-01

Gallium and antimony self-diffusion experiments have been performed in undoped 69Ga121Sb/71Ga123Sb isotope heterostructures at temperatures between 571 and 708 °C under Sb- and Ga-rich ambients. Ga and Sb profiles measured with secondary ion mass spectrometry reveal that Ga diffuses faster than Sb by several orders of magnitude. This strongly suggests that the two self-atom species diffuse independently on their own sublattices. Experimental results lead us to conclude that Ga and Sb diffusion are mediated by Ga vacancies and Sb interstitials, respectively, and not by the formation of a triple defect proposed earlier by Weiler and Mehrer [Philos. Mag. A 49, 309 (1984)]. The extremely slow diffusion of Sb up to the melting temperature of GaSb is proposed to be a consequence of amphoteric transformations between native point defects which suppress the formation of those native defects which control Sb diffusion. Preliminary experiments exploring the effect of Zn indiffusion at 550 °C on Ga and Sb diffusion reveal an enhanced intermixing of the Ga isotope layers compared to undoped GaSb. However, under the same conditions the diffusion of Sb was not significantly affected.

Electron and positron characteristics in Al_xIn_1_−_xSb: A comparative study performed by using a pseudopotential approach

International Nuclear Information System (INIS)

Fares, Nour El-Houda; Bouarissa, Nadir

2016-01-01

Highlights: • Electron band structure and related properties in Al_xIn_1_−_xSb. • Positron characteristics in Al_xIn_1_−_xSb. • Differences and similarities between electronic and positronic properties in Al_xIn_1_−_xSb. • Investigation of positron annihilation in Al_xIn_1_−_xSb semiconductor alloys. - Abstract: Based on a pseudopotential approach under the virtual-crystal approximation, the electron and positron band structures and their derived properties have been investigated for zinc-blende Al_xIn_1_−_xSb ternary semiconductor alloys. The effect of compositional disorder on electron and positron band structures has been examined and discussed. Moreover, the differences and the similarities between electron and positron characteristics in the material system of interest have been analyzed. The present study reveals possibilities for the investigation of the positron annihilation in Al_xIn_1_−_xSb.

Template-Free Synthesis of Sb2S3 Hollow Microspheres as Anode Materials for Lithium-Ion and Sodium-Ion Batteries

Science.gov (United States)

Xie, Jianjun; Liu, Li; Xia, Jing; Zhang, Yue; Li, Min; Ouyang, Yan; Nie, Su; Wang, Xianyou

2018-03-01

Hierarchical Sb2S3 hollow microspheres assembled by nanowires have been successfully synthesized by a simple and practical hydrothermal reaction. The possible formation process of this architecture was investigated by X-ray diffraction, focused-ion beam-scanning electron microscopy dual-beam system, and transmission electron microscopy. When used as the anode material for lithium-ion batteries, Sb2S3 hollow microspheres manifest excellent rate property and enhanced lithium-storage capability and can deliver a discharge capacity of 674 mAh g-1 at a current density of 200 mA g-1 after 50 cycles. Even at a high current density of 5000 mA g-1, a discharge capacity of 541 mAh g-1 is achieved. Sb2S3 hollow microspheres also display a prominent sodium-storage capacity and maintain a reversible discharge capacity of 384 mAh g-1 at a current density of 200 mA g-1 after 50 cycles. The remarkable lithium/sodium-storage property may be attributed to the synergetic effect of its nanometer size and three-dimensional hierarchical architecture, and the outstanding stability property is attributed to the sufficient interior void space, which can buffer the volume expansion. [Figure not available: see fulltext.

Optimization of chromatographic conditions for determination of aflatoxin B1, B2, G1 and G2 by using liquid chromatography-mass Spectrometry

Science.gov (United States)

Ramadhaningtyas, Dillani Putri; Aryana, Nurhani; Aristiawan, Yosi; Styarini, Dyah

2017-11-01

The optimization of instrument condition and chromatographic separation for analysis of aflatoxin B1, B2, G1 and G2 using liquid chromatography tandem with mass spectrometer detector was conducted in the aim to provide more accurate and reliable analysis results. The aflatoxin known to be serious threat for human health as it is classified as the carcinogenic compounds. The aflatoxin B1, B2, G1 and G2 were selected due to its extensive contamination in various agricultural commodities. The best chromatographic separation was obtained using C-18 column with gradient elution of solvent 5 mM ammonium acetate and 0.1% formic acid in methanol at 7 minutes runtime analysis. The linearity of the detector showed satisfied results as the coefficient determination found to be 0.9994, 0.9996, 0.9998 and 0.9987 for aflatoxin B1, G1, B2, and G2 respectively in the range concentration from 1 to 20 ng/g. The quantifier ion selected for the aflatoxin B1, B2, G1 and G2 was m/z 285.1, 259, 243 and 313 respectively. The instrument precision at these quantifier ions also showed satisfied result with %RSD was around 3.4 to 6.8%. The optimized method present in this study can be used for further sample analysis.

The electronic structure of Ga As1-xPx and Ga Sb1-xPx calculated using the recursion method

International Nuclear Information System (INIS)

El-Hasan, M.; Tomak, M.

1988-10-01

The electronic structure calculation of Ga As 1-x P x and Ga Sb 1-x P x alloys using the recursion method is reported. A five orbitals, sp 3 s*, per atom model is used in the tight-binding representation of the Hamiltonian. The local density of states are calculated for Ga, As, Sb and P-sites, in a cluster of 216 atoms, the results are reasonably in good agreement with previous calculations. (author). 12 refs, 8 figs, 1 tab

Optical response of confined excitons in GaInAsSb/GaSb Quantum Dots heterostructures

Energy Technology Data Exchange (ETDEWEB)

Sanchez-Cano, R [Departamento de Fisica, Universidad Autonoma de Occidente, A.A. 2790, Cali (Colombia); Tirado-Mejia, L; Fonthal, G; Ariza-Calderon, H [Laboratorio de Optoelectronica, Universidad del Quindio, A.A. 4603 Armenia (Colombia); Porras-Montenegro, N, E-mail: rsanchez40@gmail.co [Departamento de Fisica, Universidad del Valle, A.A. 25360, Cali (Colombia)

2009-05-01

The narrow-gap Ga{sub 1-x}In{sub x}As{sub y}Sb{sub 1-y} compounds are suitable materials for heterostructure devices operating in the infrared wavelength range. In these compounds grown by liquid phase epitaxy over GaSb single crystals, for x and y values in the range of 0.10 to 0.14 for both variables, the photoluminescence optical response at 12K is blue-shifted by 20 meV related to the photoreflectance response. We believe this behavior is due to possible higher electronic confinement in some places of the heterostructure, possibly formed in the interface during the growth process. In order to explain this behavior, in this work we study the exciton recombination energy in spherical Quantum Dots (QDs) on Ga{sub 1-x}In{sub x}As{sub y}Sb{sub 1-y}/GaSb, using the variational procedure within the effective-mass approximation and considering an electron in a Type I band alignment formed by two semiconductors with similar parabolic conduction bands. Our results are in good agreement with recent experimental results.

Analysis of the dimerized Sb/Si(001)-(2x1) surface by x-ray standing waves

International Nuclear Information System (INIS)

Lyman, P.F.; Qian, Y.; Bedzyk, M.J.

1994-12-01

X-ray standing wave measurements were undertaken to study the bonding position of Sb adatoms on the Sb-saturated Si(001)-(2x1) surface. Using the (004) and (022) Bragg reflections, the authors find that the Sb atoms form dimers, and that the center of the Sb ad-dimers lies 1.64 angstrom above the bulk-like Si(004) surface atomic plane. These in-plane results are compared to two structural models consisting of dimers whose bonds are parallel to the surface plane and whose centers are either shifted or unshifted (parallel to the dimer bond direction) relative to the underlying substrate planes. The authors thus find two special cases consistent with these data: one with symmetric (unshifted) dimers having a dimer bond length of 2.81 angstrom, and the other with midpoint-shifted dimers, having a bond length of 2.88 angstrom and a lateral shift of 0.21 angstrom

Improved electrochemical performance of natural honeycomb templated LiSbO3 as an anode in lithium-ion battery

International Nuclear Information System (INIS)

Kundu, M.; Mahanty, S.; Basu, R.N.

2011-01-01

Highlights: → LiSbO 3 powders are synthesized by using honeycomb from natural beehive as template. → Agglomeration-free morphology with discrete cubic shaped 40-80 nm particles. → Electrochemically active anode in lithium-ion coin cells. → Improved capacity retention and rate performance in templated LiSbO 3 . - Abstract: LiSbO 3 has been synthesized by wet-chemical route using natural honeycomb as template, followed by thermal treatment at 850 deg. C. X-ray powder diffraction (XRD) confirms a single phase material having an orthorhombic crystal structure with lattice parameters of a = 4.912 A, b = 8.679 A and c = 5.089 A. Field emission scanning electron microscopy (FESEM) revealed that while conventional LiSbO 3 synthesized without using any template (C-LiSbO 3 ) consists of softly agglomerated clusters of bar-shaped multifaceted micrometer-sized grains (0.5-4.0 μm long and 0.5-1.0 μm wide), templated LiSbO 3 (T-LiSbO 3 ) consists of an agglomeration-free morphology with discrete cubic shaped particles of sizes 40-80 nm. Electrochemical investigation in 2032 type coin cells vs Li/Li + shows that Li insertion in LiSbO 3 takes place at 0.78 V while Li extraction occurs in two stages at 1.1 and 1.4 V with initial capacities of 178 and 196 mAh g -1 for C-LiSbO 3 and T-LiSbO 3 respectively. While C-LiSbO 3 shows a drastic capacity fading retaining only 28% of initial capacity after 100 cycles, T-LiSbO 3 retains ∼48% of the initial capacity due to the faceted morphology of the nanoparticles.

High-density expression of Ca2+-permeable ASIC1a channels in NG2 glia of rat hippocampus.

Directory of Open Access Journals (Sweden)

Yen-Chu Lin

Full Text Available NG2 cells, a fourth type of glial cell in the mammalian CNS, undergo reactive changes in response to a wide variety of brain insults. Recent studies have demonstrated that neuronally expressed acid-sensing ion channels (ASICs are implicated in various neurological disorders including brain ischemia and seizures. Acidosis is a common feature of acute neurological conditions. It is postulated that a drop in pH may be the link between the pathological process and activation of NG2 cells. Such postulate immediately prompts the following questions: Do NG2 cells express ASICs? If so, what are their functional properties and subunit composition? Here, using a combination of electrophysiology, Ca2+ imaging and immunocytochemistry, we present evidence to demonstrate that NG2 cells of the rat hippocampus express high density of Ca2+-permeable ASIC1a channels compared with several types of hippocampal neurons. First, nucleated patch recordings from NG2 cells revealed high density of proton-activated currents. The magnitude of proton-activated current was pH dependent, with a pH for half-maximal activation of 6.3. Second, the current-voltage relationship showed a reversal close to the equilibrium potential for Na+. Third, psalmotoxin 1, a blocker specific for the ASIC1a channel, largely inhibited proton-activated currents. Fourth, Ca2+ imaging showed that activation of proton-activated channels led to an increase of [Ca2+]i. Finally, immunocytochemistry showed co-localization of ASIC1a and NG2 proteins in the hippocampus. Thus the acid chemosensor, the ASIC1a channel, may serve for inducing membrane depolarization and Ca2+ influx, thereby playing a crucial role in the NG2 cell response to injury following ischemia.

Quantum Hall effect in InAs/AlSb double quantum well

International Nuclear Information System (INIS)

Yakunin, M.V.; Podgornykh, S.M.; Sadof'ev, Yu.G.

2009-01-01

Double quantum wells (DQWs) were first implemented in the InAs/AlSb heterosystem, which is characterized by a large Lande g factor |g|=15 of the InAs layers forming the well, much larger than the bulk g factor |g|=0.4 of the GaAs in conventional GaAs/AlGaAs DQWs. The quality of the samples is good enough to permit observation of a clear picture of the quantum Hall effect (QHE). Despite the small tunneling gap, which is due to the large barrier height (1.4 eV), features with odd filling factors ν=3,5,7, ... are present in the QHE, due to collectivized interlayer states of the DQW. When the field is rotated relative to the normal to the layers, the ν=3 state is suppressed, confirming the collectivized nature of that state and denying that it could owe its existence to a strong asymmetry of the DQW. Previously the destruction of the collectivized QHE states by a parallel field had been observed only for the ν=1 state. The observation of a similar effect for ν=3 in an InAs/AlSb DQW may be due to the large bulk g factor of InAs

Effect of tungsten on the phase-change properties of Ge_8Sb_2Te_1_1 Thin Films for the Phase-change device

International Nuclear Information System (INIS)

Park, Cheol-Jin; Kong, Heon; Lee, Hyun-Yong; Yeo, Jong-Bin

2017-01-01

In this study, the electrical, optical, and structural properties of tungsten (W)-doped Ge_8Sb_2Te_1_1 thin films were investigated. Previously, GeSbTe alloys were doped with various materials in an attempt to improve the thermal stability. Ge_8Sb_2Te_1_1 and W-doped Ge_8Sb_2Te_1_1 films with a thickness of 200 nm were fabricated by using an RF magnetron reactive co-sputtering system at room temperature on Si (p-type, 100) and glass substrate. The fabricated thin films were annealed in a furnace in the ∼ 0 - 400 ℃ temperature range. The optical properties were analyzed using a UV-Vis-IR spectrophotometer, and by using Beer’s Law equation, the optical-energy band gap (E_o_p), slope B"1"/"2, and slope 1/F were calculated. For the crystalline materials, an increase in the slope B"1"/"2 and 1/F was observed, exhibiting a good effect on the thermal stability in the amorphous state after the phase change. The structural properties were analyzed by X-ray diffraction, and the result showed that the W-doped Ge_8Sb_2Te_1_1 had a face-centered-cubic (fcc) crystalline structure increased crystallization temperature (T_c). An increase in the T_c increased the thermal stability in the amorphous state. The electrical properties were analyzed using a 4-point probe, exhibiting an increase in the sheet resistance (R_s) in the amorphous and the crystalline states indicating a reduced programming current in the memory device.

Self-diffusion in 69Ga121Sb/71Ga123Sb isotope heterostructures

OpenAIRE

Bracht, H.; Nicols, S. P.; Haller, E. E.; Silveira, Juan Pedro; Briones Fernández-Pola, Fernando

2001-01-01

Gallium and antimony self-diffusion experiments have been performed in undoped 69Ga121Sb/71Ga123Sb isotope heterostructures at temperatures between 571 and 708 °C under Sb- and Ga-rich ambients. Ga and Sb profiles measured with secondary ion mass spectrometry reveal that Ga diffuses faster than Sb by several orders of magnitude. This strongly suggests that the two self-atom species diffuse independently on their own sublattices. Experimental results lead us to conclude that Ga and Sb diffusio...

(In)GaSb/AlGaSb quantum wells grown on Si substrates

International Nuclear Information System (INIS)

Akahane, Kouichi; Yamamoto, Naokatsu; Gozu, Shin-ichiro; Ueta, Akio; Ohtani, Naoki

2007-01-01

We have successfully grown GaSb and InGaSb quantum wells (QW) on a Si(001) substrate, and evaluated their optical properties using photoluminescence (PL). The PL emissions from the QWs at room temperature were observed at around 1.55 μm, which is suitable for fiber optic communications systems. The measured ground state energy of each QW matched well with the theoretical value calculated by solving the Schroedinger equation for a finite potential QW. The temperature dependence of the PL intensity showed large activation energy (∼ 77.6 meV) from QW. The results indicated that the fabricated QW structure had a high crystalline quality, and the GaSb QW on Si for optical devices operating at temperatures higher than room temperature will be expected

Roles of G1359A polymorphism of the cannabinoid receptor gene (CNR1) on weight loss and adipocytokines after a hypocaloric diet.

Science.gov (United States)

De Luis, D A; González Sagrado, M; Aller, R; Conde, R; Izaola, O; de la Fuente, B; Primo, D

2011-01-01

A intragenic biallelic polymorphism (1359 G/A) of the CB1 gene resulting in the substitution of the G to A at nucleotide position 1359 in codon 435 (Thr), was reported as a common polymorphism in Caucasian populations. Intervention studies with this polymorphism have not been realized. We decided to investigate the role of the polymorphism (G1359A) of CB1 receptor gene on adipocytokines response and weight loss secondary to a lifestyle modification (Mediterranean hypocaloric diet and exercise) in obese patients. A population of 94 patients with obesity was analyzed. Before and after 3 months on a hypocaloric diet, an anthropometric evaluation, an assessment of nutritional intake and a biochemical analysis were performed. The statistical analysis was performed for the combined G1359A and A1359A as a group and wild type G1359G as second group, with a dominant model. Forty seven patients (50%) had the genotype G1359G (wild type group) and 47 (50%) patients G1359A (41 patients, 43.6%) or A1359A (6 patients, 6.4%) (mutant type group) had the genotype. In wild and mutant type groups, weight, body mass index, fat mass, waist circumference and systolic blood pressure decreased. In mutant type group, resistin (4.15 ± 1.7 ng/ml vs. 3.90 ± 2.1 ng/ml: P < 0.05), leptin (78.4 ± 69 ng/ml vs 66.2 ± 32 ng/ml: P < 0.05) and IL-6 (1.40 ± 1.9 pg/ml vs 0.81 ± 1.5 pg/ml: P < 0.05) levels decreased after dietary treatment. The novel finding of this study is the association of the mutant allele (A1359) with a decrease of resistin, leptin and interleukin-6 secondary to weight loss.

As-free pnictide LaNi{sub 1-x}Sb{sub 2} thin films grown by reactive molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Retzlaff, Reiner; Buckow, Alexander; Kurian, Jose; Alff, Lambert [Institute of Materials Science, Technische Universitaet Darmstadt, Petersenstr. 23, 64287 Darmstadt (Germany)

2012-07-01

We use reactive molecular beam epitaxy (RMBE) as synthesis technique for the search of arsenic free pnictide superconductors. Epitaxial thin films of LaNi{sub 1-x}Sb{sub 2} were grown on (100)MgO substrates from elemental sources by simultaneous evaporation of high purity La, Ni and Sb metals by e-gun. The LaNi{sub 1-x}Sb{sub 2} thin films grow epitaxially and are (00l) oriented with high crystalline quality, as evident from RHEED and X-Ray diffraction studies. The Ni deficient LaNi{sub 1-x}Sb{sub 2} thin films show metallic behavior with a room temperature resistivity of 110 {mu}{Omega} cm, while the stoichiometric compound is a semiconductor/insulator. The isostructural compound with Bi as pnictide shows a superconducting transition with a T{sub C}(0) of 3.1 K.

Radiation-modified structure of Ge25Sb15S60 and Ge35Sb5S60 glasses

International Nuclear Information System (INIS)

Kavetskyy, T.; Shpotyuk, O.; Kaban, I.; Hoyer, W.

2008-01-01

Atomic structures of Ge 25 Sb 15 S 60 and Ge 35 Sb 5 S 60 glasses are investigated in the γ-irradiated and annealed after γ-irradiation states by means of high-energy synchrotron x-ray diffraction technique. The first sharp diffraction peak (FSDP) is detected at around 1.1 A -1 in the structure factors of both alloys studied. The FSDP position is found to be stable for radiation/annealing treatment of the samples, while the FSDP intensity shows some changes between γ-irradiated and annealed states. The peaks in the pair distribution functions observed between 2 and 4 A are related to the Ge-S, Ge-Sb, and Sb-Sb first neighbor correlations and Ge-Ge second neighbor correlations in the edge-shared GeS 4/2 tetrahedra, and S-S and/or Ge-Ge second neighbor correlations in the corner-shared GeS 4/2 tetrahedra. Three mechanisms of the radiation-/annealing-induced changes are discussed in the framework of coordination topological defect formation and bond-free solid angle concepts

The Path from VLITE to ngLOBO: A Roadmap for Evolving a Low Frequency Commensal System from the JVLA to the ngVLA

Science.gov (United States)

Kassim, Namir E.; Clarke, Tracy; Giacintucci, Simona; Helmboldt, Joseph; Ray, Paul S.; Peters, Wendy; Polisensky, Emil; hicks, Brian C.; Brisken, Walter; hyman, Scott D.; Deneva, Julia; Kerr, Matthew T.; Taylor, Gregory; Dowell, Jayce; Schinzel, Frank K.

2018-01-01

The VLA Low-band Ionosphere and Transient Experiment (VLITE, ) is a commensal observing system on the NRAO Karl G. Jansky Very Large Array (VLA). The separate optical path of the prime-focus sub-GHz dipole feeds and the Cassegrain-focus GHz feeds provided an opportunity to expand the simultaneous frequency operation of the VLA through joint observations across both systems. 16 VLA antennas are outfitted with dedicated samplers and use spare fibers to transport the 320-384 MHz band to the VLITE CPU-based correlator. Initial goals included exploring the scientific potential of a commensal low frequency system for ionospheric remote sensing, astrophysics and transients. VLITE operates at nearly 70% wall time with roughly 6200 hours of VLA time recorded each year.Several papers at this meeting review VLITE science and early results. Here we consider how the project could evolve in the future. Over the next 10 years, a straightforward evolutionary path calls for an expansion of VLITE to all 27 VLA antennas and to the maximum available low band receiver bandwidth (224-480 MHz). The GPU-based correlator for this LOw Band Observatory (LOBO) would also incorporate lower frequency signals from the new VLA 74 MHz system, including from VLA dishes (60-80 MHz) and standalone Long Wavelength Array (LWA) aperture array stations (20-80 MHz).In the longer term, we look towards leveraging the vast infrastructure of the ngVLA to include a commensal low frequency capability, called ngLOBO. As described in our community white paper (Taylor et al. 2018; arXiv:1708.00090), ngLOBO has three primary scientific missions: (1) Radio Large Synoptic Survey Telescope (Radio-LSST): one naturally wide beam, commensal with ngVLA, will conduct a continuous synoptic survey of large swaths of the sky for both slow and fast transients; (2) This same commensal beam will provide complementary low frequency images of all ngVLA targets when such data enhances their value. (3) Independent beams from the ng

Comparison of electrochemical performance of as-cast Pb-1 wt.% Sn and Pb-1 wt.% Sb alloys for lead-acid battery components

Energy Technology Data Exchange (ETDEWEB)

Osorio, Wislei R.; Peixoto, Leandro C.; Garcia, Amauri [Department of Materials Engineering, University of Campinas - UNICAMP, PO Box 612, 13083-970 Campinas, SP (Brazil)

2010-03-15

A comparative experimental study of the electrochemical features of as-cast Pb-1 wt.% Sn and Pb-1 wt.% Sb alloys is carried out with a view to applications in the manufacture of lead-acid battery components. The as-cast samples are obtained using a water-cooled unidirectional solidification system. Pb-Sn and Pb-Sb alloy samples having similar coarse cell arrays are subjected to corrosion tests in order to assess the effect of Sn or Sb segregation in the cell boundary on the electrochemical performance. Electrochemical impedance spectroscopy (EIS) diagrams, potentiodynamic polarization curves and an equivalent circuit analysis are used to evaluate the electrochemical parameters in a 0.5 M H{sub 2}SO{sub 4} solution at 25 C. Both the experimental and simulated EIS parameters evidence different kinetics of corrosion. The Pb-1 wt.% Sn alloy is found to have a current density which is of about three times lower than that of the Pb-1 wt.% Sb alloy which indicates that dilute Pb-Sn alloys have higher potential for application as positive grid material in maintenance-free Pb-acid batteries. (author)

Pushing X-ray charge densities to the limit: Comparative study of CoSb3

DEFF Research Database (Denmark)

Schmøkel, Mette Stokkebro; Larsen, Finn Krebs; Overgaard, Jacob

CoSb3 is a highly important host-guest material for the engineering of high-performance thermoelectric materials.[1] Its crystal structure has empty cavities and when guest atoms are added to CoSb3, its thermoelectric properties are greatly enhanced due to decreased thermal conductivity.[2] In or......] M. Schmøkel, L. Bjerg, F.K. Larsen, J. Overgaard, S. Cenedese, M. Christensen, G.K.H. Madsen, C. Gatti, A. Pinkerton, E. Nishibori, K. Sugimoto, M. Takata, B.B. Iversen. In preparation....

AgSbSe2 and AgSb(S,Se)2 thin films for photovoltaic applications

International Nuclear Information System (INIS)

Garza, J.G.; Shaji, S.; Rodriguez, A.C.; Das Roy, T.K.; Krishnan, B.

2011-01-01

Silver antimony selenide (AgSbSe 2 ) thin films were prepared by heating sequentially deposited multilayers of antimony sulphide (Sb 2 S 3 ), silver selenide (Ag 2 Se), selenium (Se) and silver (Ag). Sb 2 S 3 thin film was prepared from a chemical bath containing SbCl 3 and Na 2 S 2 O 3 , Ag 2 Se from a solution containing AgNO 3 and Na 2 SeSO 3 and Se thin films from an acidified solution of Na 2 SeSO 3 , at room temperature on glass substrates. Ag thin film was deposited by thermal evaporation. The annealing temperature was 350 deg. C in vacuum (10 -3 Torr) for 1 h. X-ray diffraction analysis showed that the thin films formed were polycrystalline AgSbSe 2 or AgSb(S,Se) 2 depending on selenium content in the precursor films. Morphology and elemental analysis of these films were done using scanning electron microscopy and energy dispersive X-ray spectroscopy. Optical band gap was evaluated from the UV-visible absorption spectra of these films. Electrical characterizations were done using Hall effect and photocurrent measurements. A photovoltaic structure: glass/ITO/CdS/AgSbSe 2 /Al was formed, in which CdS was deposited by chemical bath deposition. J-V characteristics of this structure showed V oc = 435 mV and J sc = 0.08 mA/cm 2 under illumination using a tungsten halogen lamp. Preparation of a photovoltaic structure using AgSbSe 2 as an absorber material by a non-toxic selenization process is achieved.

Exploring the Nature of Silicon-Noble Gas Bonds in H3SiNgNSi and HSiNgNSi Compounds (Ng = Xe, Rn

Directory of Open Access Journals (Sweden)

Sudip Pan

2015-03-01

Full Text Available Ab initio and density functional theory-based computations are performed to investigate the structure and stability of H3SiNgNSi and HSiNgNSi compounds (Ng = Xe, Rn. They are thermochemically unstable with respect to the dissociation channel producing Ng and H3SiNSi or HSiNSi. However, they are kinetically stable with respect to this dissociation channel having activation free energy barriers of 19.3 and 23.3 kcal/mol for H3SiXeNSi and H3SiRnNSi, respectively, and 9.2 and 12.8 kcal/mol for HSiXeNSi and HSiRnNSi, respectively. The rest of the possible dissociation channels are endergonic in nature at room temperature for Rn analogues. However, one three-body dissociation channel for H3SiXeNSi and one two-body and one three-body dissociation channels for HSiXeNSi are slightly exergonic in nature at room temperature. They become endergonic at slightly lower temperature. The nature of bonding between Ng and Si/N is analyzed by natural bond order, electron density and energy decomposition analyses. Natural population analysis indicates that they could be best represented as (H3SiNg+(NSi− and (HSiNg+(NSi−. Energy decomposition analysis further reveals that the contribution from the orbital term (ΔEorb is dominant (ca. 67%–75% towards the total attraction energy associated with the Si-Ng bond, whereas the electrostatic term (ΔEelstat contributes the maximum (ca. 66%–68% for the same in the Ng–N bond, implying the covalent nature of the former bond and the ionic nature of the latter.

Crystal structure and magnetic properties of Tb6FeSb2

International Nuclear Information System (INIS)

Cai Gemei; Zhang Jiliang; He Wei; Qin Pingli; Zeng Lingmin

2006-01-01

The crystal structure and magnetic properties of Tb 6 FeSb 2 has been investigated for the first time. The compound crystallizes in the hexagonal, space group P6-bar 2m (No. 189) with the Ho 6 FeSb 2 structure type and lattice parameters a=8.1942(5)A, c=4.1758(3)A, z=1 and D calc =8.564g/cm 3 . Its magnetic properties were measured between 85 and 420K. The Curie temperature T c =256K was obtained using the method of intersecting tangents, and the effective paramagnetic moment was μ eff =9.32μ B per Tb atom

Synthesis and crystal structure of Cd2SbBr2

International Nuclear Information System (INIS)

Reshetova, L.N.; Shevel'kov, A.V.; Popovkin, B.A.

1999-01-01

A new cadmium antimonidobromide, i.e. Cd 2 SbBr 2 , has been synthesized by the standard ampoule method. The compound is crystallized in monoclinic system of sp. gr. P2 1 :a=8.244 (1), b=9.920(1), c=8.492(1) A, Β=116.80(1) deg. Binuclear anions of Sb 2 4- (Sb-Sb 2.78 A), octahedrically surrounded by six cadmium atoms, are a basic specific feature of the structure. Octahedrons of Sb 2 Cd 6 , by collectivizing the equatorial vertices. form layers, the alternation mode of which is similar to the one described for cadmium and mercury arsenidochlorides

Effect of solidification rate on the microstructure and microhardness of a melt-spun Al-8Si-1Sb alloy

International Nuclear Information System (INIS)

Karakoese, E.; Keskin, M.

2009-01-01

The properties of rapidly solidified hypoeutectic Al-8Si-1Sb alloy, produced by melt-spinning technique at a different solidification rates, were investigated using the X-ray diffraction (XRD), the optical microscopy (OM), the scanning electron microscopy (SEM) together with the energy dispersive spectroscopy (EDS), the differential scanning calorimetry (DSC) and the microhardness technique. The properties of rapidly solidified ribbons were then compared with those of the chill-casting alloy. The results show that rapid solidification has influence on the phase constitution of the hypoeutectic Al-8Si-1Sb alloy. The phases present in the hypoeutectic Al-8Si-1Sb ingot alloy were determined to be α-Al, fcc Si and intermetallic AlSb phases whereas only α-Al and fcc Si phases were identified in the melt-spinning alloy. The rapid solidification has a significant effect on the microstructure of the hypoeutectic Al-8Si-1Sb alloy. Particle size in the microstructure of the ribbons is too small to compare with particle size in the microstructure of the ingot alloy. Moreover, the significant change in hardness occurs that is attributed to changes in the microstructure.

Effect of solidification rate on the microstructure and microhardness of a melt-spun Al-8Si-1Sb alloy

Energy Technology Data Exchange (ETDEWEB)

Karakoese, E. [Erciyes University, Institute of Science, 38039 Kayseri (Turkey); Keskin, M. [Erciyes University, Institute of Science, 38039 Kayseri (Turkey); Erciyes University, Physics Department, 38039 Kayseri (Turkey)], E-mail: keskin@erciyes.edu.tr

2009-06-24

The properties of rapidly solidified hypoeutectic Al-8Si-1Sb alloy, produced by melt-spinning technique at a different solidification rates, were investigated using the X-ray diffraction (XRD), the optical microscopy (OM), the scanning electron microscopy (SEM) together with the energy dispersive spectroscopy (EDS), the differential scanning calorimetry (DSC) and the microhardness technique. The properties of rapidly solidified ribbons were then compared with those of the chill-casting alloy. The results show that rapid solidification has influence on the phase constitution of the hypoeutectic Al-8Si-1Sb alloy. The phases present in the hypoeutectic Al-8Si-1Sb ingot alloy were determined to be {alpha}-Al, fcc Si and intermetallic AlSb phases whereas only {alpha}-Al and fcc Si phases were identified in the melt-spinning alloy. The rapid solidification has a significant effect on the microstructure of the hypoeutectic Al-8Si-1Sb alloy. Particle size in the microstructure of the ribbons is too small to compare with particle size in the microstructure of the ingot alloy. Moreover, the significant change in hardness occurs that is attributed to changes in the microstructure.

Post treatment PSA nadirs support continuing dose escalation study in patients with pretreatment PSA levels >10 ng/ml, but not in those with PSA <10 NG/ML

International Nuclear Information System (INIS)

Herold, D.H.; Hanlon, A.L.; Movsas, B.; Hanks, G.E.

1996-01-01

Purpose: We have recently shown that ICRU reporting point radiation doses above 71 Gy are not associated with improved bNED survival in prostate cancer patients with pretreatment PSA level 20 ng/ml we found a strong correlation between dose and nadir values < 1.0 ng/ml (p=.003) as well as for nadir's < 0.5 ng/ml (p=.04). This dose/nadir effect held at several dose levels, but 74 Gy for nadir values < 1.0 ng/ml and 72 Gy for nadir's < 0.5 ng/ml remained the most significant. 32% of these patients achieved a nadir < 1.0ng/ml and 15% < 0.5ng/ml. Conclusions: This analysis provides strong additional support that patients with pretreatment PSA values of < 10 ng/ml do not benefit from dose escalation beyond an ICRU reporting point dose of 71 Gy. For patients with pretreatment PSA's of 10-19.9 ng/ml there is no dose/nadir response evaluated at a nadir of 1.0 ng/ml; however, there is a borderline effect observed at a nadir of 0.5 ng/ml. Patients with pretreatment PSA's of 20 ng/ml or greater clearly benefit from higher doses as evaluated by PSA nadirs of 1.0 ng/ml, and 0.5 ng/ml. These studies support the continued investigation of dose escalation in treating patients with PSA levels over 10 ng/ml, they do not support continued investigation of dose escalation beyond 71 Gy in patients with pretreatment PSA levels < 10 ng/ml. The failure to demonstrate any dose response for the low PSA group and the finding of only a borderline effect for the intermediate PSA group may be influenced by the relatively small number of patients in our series treated to doses < 70 Gy and the fact that none of our patients were treated to doses below 65.98 Gy. The lower limit of acceptible dose has yet to be defined

Characterization of Si(1 1 1) crystals implanted with Sb{sup +} ions and annealed by rapid thermal processing

Energy Technology Data Exchange (ETDEWEB)

Labbani, R.; Halimi, R.; Laoui, T.; Vantomme, A.; Pipeleers, B.; Roebben, G

2003-09-15

Monocrystalline Si(1 1 1) targets are implanted (at room temperature) with antimony ions at 120 keV energy to 5x10{sup 14} or 5x10{sup 15} Sb{sup +} cm{sup -2} dose. The samples are heat treated by means of rapid thermal processing (RTP) at 1000 deg. C during 60 s, under nitrogen atmosphere. In this work, we report the measured evolution of the silicon surface damage and the radiation damage recovery in relation to antimony dose and RTP processing. We also study the behavior of antimony dopant into Si(1 1 1) specimens. The investigation is carried out by He{sup +} Rutherford backscattering spectrometry (RBS; operating at 1.57 MeV energy in both random and channeling modes), X-ray diffraction (XRD) and atomic force microscopy (AFM) techniques. It is shown that a good surface damage recovery is obtained for all the annealed samples. However, after RTP, a significant loss of antimony has occurred for the specimens which are implanted with 5x10{sup 15} Sb{sup +} cm{sup -2} dose. This suggests an antimony out-diffusion. Finally, a good morphological characterization of the specimens is provided by AFM.

Superconducting thin films of As-free pnictide LaPd{sub 1-x}Sb{sub 2} grown by reactive molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Retzlaff, Reiner; Buckow, Alexander; Kurian, Jose; Alff, Lambert [Institute of Materials Science, Technische Universitaet Darmstadt, Petersenstr. 23, 64287 Darmstadt (Germany)

2013-07-01

We use reactive molecular beam epitaxy as synthesis technique for the search of arsenic free pnictide superconductors. Epitaxial thin films of LaPd{sub 1-x}Sb{sub 2} were grown on (100) MgO substrates from elemental sources by simultaneous evaporation of high purity La, Pd and Sb metals by e-gun. LaPd{sub 1-x}Sb{sub 2} belongs to a novel class of pnictide superconductors with a peculiar pnictide square net layer. Previously, we have reported epitaxial growth of isostructural Bi based compounds. The substitution of Bi by Sb leads to thin films with metallic behavior and room temperature resistivity of about 85 μΩ cm. The highest observed transition temperature T{sub c} inLaPd{sub 1-x}Sb{sub 2} is 3.1 K and does not depend on x. We discuss strategies to increase T{sub c} in this pnictide subfamily.

Thermoelectric and mechanical properties of spark plasma sintered Cu3SbSe3 and Cu3SbSe4: Promising thermoelectric materials

Science.gov (United States)

Tyagi, Kriti; Gahtori, Bhasker; Bathula, Sivaiah; Toutam, Vijaykumar; Sharma, Sakshi; Singh, Niraj Kumar; Dhar, Ajay

2014-12-01

We report the synthesis of thermoelectric compounds, Cu3SbSe3 and Cu3SbSe4, employing the conventional fusion method followed by spark plasma sintering. Their thermoelectric properties indicated that despite its higher thermal conductivity, Cu3SbSe4 exhibited a much larger value of thermoelectric figure-of-merit as compared to Cu3SbSe3, which is primarily due to its higher electrical conductivity. The thermoelectric compatibility factor of Cu3SbSe4 was found to be ˜1.2 as compared to 0.2 V-1 for Cu3SbSe3 at 550 K. The results of the mechanical properties of these two compounds indicated that their microhardness and fracture toughness values were far superior to the other competing state-of-the-art thermoelectric materials.

Sequential and simultaneous adsorption of Sb(III) and Sb(V) on ferrihydrite: Implications for oxidation and competition.

Science.gov (United States)

Qi, Pengfei; Pichler, Thomas

2016-02-01

Antimony (Sb) is a naturally occurring element of growing environmental concern whose toxicity, adsorption behavior and other chemical properties are similar to that of arsenic (As). However, less is known about Sb compared to As. Individual and simultaneous adsorption experiments with Sb(III) and Sb(V) were conducted in batch mode with focus on the Sb speciation of the remaining liquid phase during individual Sb(III) adsorption experiments. The simultaneous adsorption and oxidation of Sb(III) was confirmed by the appearance of Sb(V) in the solution at varying Fe/Sb ratios (500, 100 and 8) and varying pH values (3.8, 7 and 9). This newly formed Sb(V) was subsequently removed from solution at a Fe/Sb ratio of 500 or at a pH of 3.8. However, more or less only Sb(V) was observed in the liquid phase at the end of the experiments at lower Fe/Sb ratios and higher pH, indicating that competition took place between the newly formed Sb(V) and Sb(III), and that Sb(III) outcompeted Sb(V). This was independently confirmed by simultaneous adsorption experiments of Sb(III) and Sb(V) in binary systems. Under such conditions, the presence of Sb(V) had no influence on the adsorption of Sb(III) while Sb(V) adsorption was significantly inhibited by Sb(III) over a wide pH range (4-10). Thus, in the presence of ferrihydrite and under redox conditions, which allow the presence of both Sb species, Sb(V) should be the dominant species in aquatic environments, since Sb(III) is adsorbed preferentially and at the same time oxidized to Sb(V). Copyright © 2015 Elsevier Ltd. All rights reserved.

New uranium chalcoantimonates, RbU{sub 2}SbS{sub 8} and KU{sub 2}SbSe{sub 8}, with a polar noncentrosymmetric structure

Energy Technology Data Exchange (ETDEWEB)

Choi, K S; Kanatzidis, M G

1999-09-01

The new compounds, RbU{sub 2}SbS{sub 8} and KU{sub 2}SbSe{sub 8}, were prepared as golden-black, blocklike crystals by the polychalcogenide molten flux method. RbU{sub 2}SbS{sub 8} has a two-dimensional character with layers running perpendicular to the c-axis. The coordination geometry around the U{sup 4+} atoms is best described as a bicapped trigonal prism. The trigonal prisms share triangular faces with neighboring prisms, forming one-dimensional columns along the a-axis. The columns are then joined to construct sheets by sharing capping S atoms. Sb{sup 3+} ions are sitting at the center of a slightly distorted seesaw coordination environment (CN = 4). Rb{sup +} ions are stabilized in 8-coordinate bicapped trigonal prismatic sites. KU{sub 2}SbSe{sub 8} has essentially the same structure as RbU{sub 2}SbS{sub 8}. However, Sb{sup 3+} and K{sup +} ions appear disordered in every other layer resulting in a different unit cell. RbU{sub 2}SbS{sub 8} is a semiconductor with a band gap of 1.38 eV. The band gap of KU{sub 2}SbSe{sub 8} could not be determined precisely due to the presence of overlapping intense f-f transitions in the region (0.5--1.1 eV). The Raman spectra show the disulfide stretching vibration in RbU{sub 2}SbS{sub 8} at 479 cm{sup {minus}1} and the diselenide stretching vibration in KU{sub 2}SbSe{sub 8} at 252 cm{sup {minus}1}. Magnetic susceptibility measurements indicate the presence of U{sup 4+} centers in the compounds. The compounds do not melt below 1,000 C under vacuum.

The crystal structure of ferdowsiite Ag8Sb4(As,Sb)4S16 and its relations to other ABX2 (A=Ag; B=As,Sb,Bi; X=S,Se) structures

DEFF Research Database (Denmark)

Makovicky, Emil; Topa, Dan

2014-01-01

arsenic. The crystal structure of ferdowsiite is a superstructure of a PbS like motif. The {100} planes of the PbS-like substructure are the (105̅), (301) and (010) planes in terms of the ferdowsiite lattice. The structure contains zig-zag chains of Sb1 connected via short Sb-S bonds and flanked by (Sb...

Semiotics of Power and Dictatorship in Ngũgĩ wa Thiong’o’s Later Novels

Directory of Open Access Journals (Sweden)

Yémalo, C. AMOUSSOU

2016-10-01

Full Text Available This paper explores the different uses of symbols to express power and interpersonal relationship in Ngũgĩ’s bulkiest novel Wizard of the Crow (2006, with a few illustrations from Matigari (1987. It draws on the semiotic approach and identifies about a hundred discourse strings in which signs are used to express tenor between characters. In the main, supernatural, faunal and floral symbols are found to be main vehicles of power, though many other such avenues as ‘vocations’, ‘social and gender-related symbols’ and ‘biblical characterisation and numerology’, etc are unexplored here for space constraints. Before the analysis, it is deemed necessary to overview the theoretical background to the study in which relevant concepts have been clarified. It has been concluded that there is no other work in which power is so much expressed through the explored devices as in Wizard of the Crow. Keywords: tenor, symbol, index, proverb, modality metaphor, modaliser/ weakener, modulator/strengthener

Synthesis and thermoelectric properties of Sb{sub 0.20}CoSb{sub 2.80} skutterudite

Energy Technology Data Exchange (ETDEWEB)

Figueirêdo, C.A., E-mail: camila_fig@hotmail.com [Universidade Federal do Rio Grande do Sul, PGCIMAT, Instituto de Física, 91501-970 Porto Alegre, RS (Brazil); Gallas, M.R. [Universidade Federal do Rio Grande do Sul, PGCIMAT, Instituto de Física, 91501-970 Porto Alegre, RS (Brazil); Institute for Multiscale Simulations, Friedrich-Alexander-Universität, Nägelsbachstrasse 49b, 91052 Erlangen (Germany); Zorzi, J.E. [Universidade de Caxias do Sul, Instituto de Materiais Cerâmicos, 95765-000 Bom Princípio, RS (Brazil); Perottoni, C.A. [Universidade Federal do Rio Grande do Sul, PGCIMAT, Instituto de Física, 91501-970 Porto Alegre, RS (Brazil); Universidade de Caxias do Sul, Instituto de Materiais Cerâmicos, 95765-000 Bom Princípio, RS (Brazil)

2014-06-15

Highlights: • A HP-HT Sb{sub 0.20}CoSb{sub 2.80} phase was prepared by processing cobalt antimonide at 7.7 GPa and 550 °C, for (at least) 5 min. • The mechanism of formation of this phase involves (i) decomposition of cobalt antimonide into CoSb{sub 2} and Sb, and (ii) insertion of Sb into the remaining cobalt antimonide. • The mechanism of formation is qualitatively different from that responsible for the formation of the high pressure (greater than 20 GPa) phase. - Abstract: Polycrystalline samples of cobalt antimonide (CoSb{sub 2.79}) were submitted to different conditions of pressure, temperature and processing time, in a high-pressure toroidal-type chamber, aiming to maximize the production of the high pressure phase previously observed in experiments with a diamond anvil cell. Rietveld refinements of X-ray powder diffraction data were performed to determine the phase composition and structural parameters. The maximum yield, 89(2) wt.% of Sb{sub x}CoSb{sub 3−x} phase, was obtained at 7.7 GPa, 550 °C and (at least) 5 min of processing time. The mechanism behind the formation of Sb{sub x}CoSb{sub 3−x} at high pressure and high temperature is actually not the same as that previously inferred from experiments at higher pressures (20 GPa) and room temperature with the diamond anvil cell. Indeed, evidences suggest that, at high pressure and high temperature, Sb{sub x}CoSb{sub 3−x} is formed by insertion of Sb resulting from decomposition of cobalt antimonide. Thermal conductivity, Seebeck coefficient and electrical conductivity were estimated for CoSb{sub 2.79} and Sb{sub 0.20}CoSb{sub 2.80}. The thermoelectric figure of merit at room temperature for Sb{sub 0.20}CoSb{sub 2.80} resulted 33% greater than that for CoSb{sub 2.79}.

In planta Transformed Cumin (Cuminum cyminum L.) Plants, Overexpressing the SbNHX1 Gene Showed Enhanced Salt Endurance.

Science.gov (United States)

Pandey, Sonika; Patel, Manish Kumar; Mishra, Avinash; Jha, Bhavanath

2016-01-01

Cumin is an annual, herbaceous, medicinal, aromatic, spice glycophyte that contains diverse applications as a food and flavoring additive, and therapeutic agents. An efficient, less time consuming, Agrobacterium-mediated, a tissue culture-independent in planta genetic transformation method was established for the first time using cumin seeds. The SbNHX1 gene, cloned from an extreme halophyte Salicornia brachiata was transformed in cumin using optimized in planta transformation method. The SbNHX1 gene encodes a vacuolar Na+/H+ antiporter and is involved in the compartmentalization of excess Na+ ions into the vacuole and maintenance of ion homeostasis Transgenic cumin plants were confirmed by PCR using gene (SbNHX1, uidA and hptII) specific primers. The single gene integration event and overexpression of the gene were confirmed by Southern hybridization and competitive RT-PCR, respectively. Transgenic lines L3 and L13 showed high expression of the SbNHX1 gene compared to L6 whereas moderate expression was detected in L5 and L10 transgenic lines. Transgenic lines (L3, L5, L10 and L13), overexpressing the SbNHX1 gene, showed higher photosynthetic pigments (chlorophyll a, b and carotenoid), and lower electrolytic leakage, lipid peroxidation (MDA content) and proline content as compared to wild type plants under salinity stress. Though transgenic lines were also affected by salinity stress but performed better compared to WT plants. The ectopic expression of the SbNHX1 gene confirmed enhanced salinity stress tolerance in cumin as compared to wild type plants under stress condition. The present study is the first report of engineering salt tolerance in cumin, so far and the plant may be utilized for the cultivation in saline areas.

In planta Transformed Cumin (Cuminum cyminum L. Plants, Overexpressing the SbNHX1 Gene Showed Enhanced Salt Endurance.

Directory of Open Access Journals (Sweden)

Sonika Pandey

Full Text Available Cumin is an annual, herbaceous, medicinal, aromatic, spice glycophyte that contains diverse applications as a food and flavoring additive, and therapeutic agents. An efficient, less time consuming, Agrobacterium-mediated, a tissue culture-independent in planta genetic transformation method was established for the first time using cumin seeds. The SbNHX1 gene, cloned from an extreme halophyte Salicornia brachiata was transformed in cumin using optimized in planta transformation method. The SbNHX1 gene encodes a vacuolar Na+/H+ antiporter and is involved in the compartmentalization of excess Na+ ions into the vacuole and maintenance of ion homeostasis Transgenic cumin plants were confirmed by PCR using gene (SbNHX1, uidA and hptII specific primers. The single gene integration event and overexpression of the gene were confirmed by Southern hybridization and competitive RT-PCR, respectively. Transgenic lines L3 and L13 showed high expression of the SbNHX1 gene compared to L6 whereas moderate expression was detected in L5 and L10 transgenic lines. Transgenic lines (L3, L5, L10 and L13, overexpressing the SbNHX1 gene, showed higher photosynthetic pigments (chlorophyll a, b and carotenoid, and lower electrolytic leakage, lipid peroxidation (MDA content and proline content as compared to wild type plants under salinity stress. Though transgenic lines were also affected by salinity stress but performed better compared to WT plants. The ectopic expression of the SbNHX1 gene confirmed enhanced salinity stress tolerance in cumin as compared to wild type plants under stress condition. The present study is the first report of engineering salt tolerance in cumin, so far and the plant may be utilized for the cultivation in saline areas.

Spin 1/2 Delafossite Honeycomb Compound Cu5SbO6

DEFF Research Database (Denmark)

Climent-Pascual, E.; Norby, Poul; Andersen, Niels Hessel

2012-01-01

Cu5SbO6 is found to have a monoclinic, Delafossite-derived structure consisting of alternating layers of O–Cu(I)–O sticks and magnetic layers of Jahn–Teller distorted Cu(II)O6 octahedra in an edge sharing honeycomb arrangement with Sb(V)O6 octahedra. This yields the structural formula Cu(I)3Cu(II...

Structural, electrical and magnetic properties of Sb-doped Pr2/3Ba1/3MnO3 perovskite manganites

International Nuclear Information System (INIS)

Sen, Vikram; Panwar, Neeraj; Bhalla, G.L.; Agarwal, S.K.

2007-01-01

We report here the electrical, magnetic and micro-structural features of the Sb-doped (nominally at Mn-sites) Pr 2/3 Ba 1/3 MnO 3 perovskite manganites. Pristine material shows two insulator-metal (I-M) like transitions in the resistivity-temperature (ρ-T) behaviour. While the higher temperature transition (T P1 ) at ∼195 K is reminiscent of the usual metal-insulator transition, the lower temperature transition (T P2 ) at ∼160 K has been ascribed to the grain boundary (GB) effects arising out of the ionic size mismatch between the ions present at the rare-earth site (Pr and Ba). With Sb doping at the Mn-site, both the resistivity peaks are seen to shift to lower temperatures. Room temperature resistivity and the peak values are also successively increasing with Sb doping. Scanning electron micrographs of the samples indicate a gradual increase in their grain sizes with Sb which indicates a gradual decrease in the GB density. The higher temperature insulator-metal transition (T P1 ) shift is explained on the basis of a competition between double-exchange and super-exchange mechanisms. The observed overall resistivity increase and the shift in the resistivity hump (T P2 ) with Sb are found related to the gradually decreasing GB density and the ensuing lattice strain increase at the grain boundaries. The intrinsic MR gets suppressed and the extrinsic MR gets enhanced with Sb doping. The observed low temperature resistivity upturn related to the localization of carriers, is also seen to increase with Sb

The SbASR-1 gene cloned from an extreme halophyte Salicornia brachiata enhances salt tolerance in transgenic tobacco.

Science.gov (United States)

Jha, Bhavanath; Lal, Sanjay; Tiwari, Vivekanand; Yadav, Sweta Kumari; Agarwal, Pradeep K

2012-12-01

Salinity severely affects plant growth and development. Plants evolved various mechanisms to cope up stress both at molecular and cellular levels. Halophytes have developed better mechanism to alleviate the salt stress than glycophytes, and therefore, it is advantageous to study the role of different genes from halophytes. Salicornia brachiata is an extreme halophyte, which grows luxuriantly in the salty marshes in the coastal areas. Earlier, we have isolated SbASR-1 (abscisic acid stress ripening-1) gene from S. brachiata using cDNA subtractive hybridisation library. ASR-1 genes are abscisic acid (ABA) responsive, whose expression level increases under abiotic stresses, injury, during fruit ripening and in pollen grains. The SbASR-1 transcript showed up-regulation under salt stress conditions. The SbASR-1 protein contains 202 amino acids of 21.01-kDa molecular mass and has 79 amino acid long signatures of ABA/WDS gene family. It has a maximum identity (73 %) with Solanum chilense ASR-1 protein. The SbASR-1 has a large number of disorder-promoting amino acids, which make it an intrinsically disordered protein. The SbASR-1 gene was over-expressed under CaMV 35S promoter in tobacco plant to study its physiological functions under salt stress. T(0) transgenic tobacco seeds showed better germination and seedling growth as compared to wild type (Wt) in a salt stress condition. In the leaf tissues of transgenic lines, Na(+) and proline contents were significantly lower, as compared to Wt plant, under salt treatment, suggesting that transgenic plants are better adapted to salt stress.

Redundant Sb condensation on GaSb epilayers grown by molecular beam epitaxy during cooling procedure

International Nuclear Information System (INIS)

Arpapay, B.; Şahin, S.; Arıkan, B.; Serincan, U.

2014-01-01

The effect of four different cooling receipts on the surface morphologies of unintentionally-doped GaSb epilayers on GaSb (100) substrates grown by molecular beam epitaxy is reported. Those receipts include three different Sb beam equivalent pressure (BEP) levels and two different termination temperatures. Surface morphologies of epilayers were examined by wet etching, surface profiler, atomic force microscopy, scanning electron microscopy and Raman spectroscopy. The results demonstrate that during the cooling period, a Sb BEP of 4.00 × 10 −4 Pa at a termination temperature of 400 °C induces a smooth surface without Sb condensation whereas same Sb BEP at a termination temperature of 350 °C forms a 300 nm thick Sb layer on the surface. In addition, it is revealed that by applying a wet etching procedure and using a surface profiler it is possible to identify this condensed layer from the two-sloped feature of mesa profile. - Highlights: • Sb beam flux termination temperature is crucial for redundant Sb condensation. • Sb beam flux level has a role on the thickness of redundant condensed Sb layer. • Redundant Sb layer thickness can be measured by two-sloped mesa structure

Analytical evaluation of the novel Lumipulse G BRAHMS procalcitonin immunoassay.

Science.gov (United States)

Ruzzenente, Orazio; Salvagno, Gian Luca; Gelati, Matteo; Lippi, Giuseppe

2016-12-01

This study was designed to evaluate the analytical performance of the novel Lumipulse G1200 BRAHMS procalcitonin (PCT) immunoassay. This analytical evaluation encompassed the calculation of the limit of blank (LOB), limit of detection (LOD), functional sensitivity, intra- and inter-assay imprecision, confirmation of linearity and a comparison with the Vidas BRAHMS PCT assay. The LOB, LOD and functional sensitivity were 0.0010 ng/mL, 0.0016 ng/mL and 0.008 ng/mL, respectively. The total analytical imprecision was found to be 2.1% and the linearity was excellent (r=1.00) in the range of concentrations between 0.006-75.5 ng/mL. The correlation coefficient with Vidas BRAHMS PCT was 0.995 and the equation of the Passing and Bablok regression analysis was [Lumipulse G BRAHMS PCT]=0.76×[Vidas BRAHMS PCT]+0.04. The mean overall bias of Lumipulse G BRAHMS PCT versus Vidas BRAHMS PCT was -3.03 ng/mL (95% confidence interval [CI]: -4.32 to -1.74 ng/mL), whereas the mean bias in samples with PCT concentration between 0-10 ng/mL was -0.49 ng/mL (95% CI: -0.77 to -0.24 ng/mL). The diagnostic agreement was 100% at 0.5 ng/mL, 97% at 2.0 ng/mL and 95% at 10 ng/mL, respectively. These results attest that Lumipulse G BRAHMS PCT exhibits excellent analytical performance, among the best of the methods currently available on the diagnostic market. However, the significant bias compared to the Vidas BRAHMS PCT suggests that the methods cannot be used interchangeably.

Gel-combustion synthesis of CoSb2O6 and its reduction to powdery Sb2Co alloy

Directory of Open Access Journals (Sweden)

MAJA JOVIC

2009-01-01

Full Text Available Sb2Co alloy in powdery form was synthesized via reduction with gaseous hydrogen of the oxide CoSb2O6, obtained by the citrate gel-combustion technique. The precursor was an aqueous solution of antimony nitrate, cobalt nitrate and citric acid. The precursor solution with mole ratio Co(II/Sb(V of 1:2 was gelatinized by evaporation of water. The gel was heated in air up to the temperature of self-ignition. The product of gel combustion was a mixture of oxides and it had to be additionally thermally treated in order to be converted to pure CoSb2O6. The reduction of CoSb2O6 by gaseous hydrogen yielded powdery Sb2Co as the sole phase. The process of oxide reduction to alloy was controlled by thermogravimetry, while X-ray diffractometry was used to control the phase compositions of both the oxides and alloys.

Sb{sub 7}Te{sub 3}/ZnSb multilayer thin films for high thermal stability and long data retention phase-change memory

Energy Technology Data Exchange (ETDEWEB)

Chen, Shiyu; Wu, Weihua [Functional Materials Research Laboratory, School of Materials Science & Engineering, Tongji University, Shanghai 201804 (China); Zhai, Jiwei, E-mail: apzhai@tongji.edu.cn [Functional Materials Research Laboratory, School of Materials Science & Engineering, Tongji University, Shanghai 201804 (China); Song, Sannian; Song, Zhitang [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Science, Shanghai 200050 (China)

2017-04-15

Highlights: • Sb{sub 7}Te{sub 3} (ST) provides a fast crystallization speed, low melting temperature. • The Sb{sub 7}Te{sub 3}/ZnSb films exhibits faster crystallization speed, high thermal stability. • The calculated temperature for 10-year data retention is about 127 {sup o}C. • The Sb{sub 7}Te{sub 3}/ZnSb multilayer configuration with low power consumption. - Abstract: Phase-change memory is regard as one of the most promising candidates for the next-generation non-volatile memory. In this work, we proposed a Sb{sub 7}Te{sub 3}/ZnSb multilayer thin films to improve the thermal stability of Sb-rich Sb{sub 3}Te{sub 7}. The sheet resistance ratio between amorphous and crystalline states reached up to 4 orders of magnitude. With regard to the thermal stability, the calculated temperature for 10-year data retention is about 127 °C. The threshold current and threshold voltage of a cell based on Sb{sub 7}Te{sub 3}/ZnSb are 6.9 μA and 1.9 V, respectively. The lower RESET power is presented in the PCM cells of Sb{sub 7}Te{sub 3}/ZnSb films, benefiting from its high resistivity.

Optical and structural properties of MOVPE-grown GaInSb/GaSb quantum wells

Energy Technology Data Exchange (ETDEWEB)

Wagener, Viera, E-mail: viera.wagener@nmmu.ac.z [Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Olivier, E.J.; Botha, J.R. [Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa)

2009-12-15

This paper reports on the optical and structural properties of strained type-I Ga{sub 1-x}In{sub x}Sb quantum wells embedded in GaSb from a metal-organic vapour phase epitaxial growth perspective. Photoluminescence measurements and transmission electron microscopy were used to evaluate the effect of the growth temperature on the quality of Ga{sub 1-x}In{sub x}Sb strained layers with varied alloy compositions and thicknesses. Although the various factors contributing to the overall quality of the strained layers are difficult to separate, the quantum well characteristics are significantly altered by the growth temperature. Despite the high growth rates (approx2 nm/s), quantum wells grown at 607 deg. C display photoluminescence emissions with full-width at half-maximum of 3.5-5.0 meV for an indium solid content (x) up to 0.15.

Optical and structural properties of MOVPE-grown GaInSb/GaSb quantum wells

International Nuclear Information System (INIS)

Wagener, Viera; Olivier, E.J.; Botha, J.R.

2009-01-01

This paper reports on the optical and structural properties of strained type-I Ga 1-x In x Sb quantum wells embedded in GaSb from a metal-organic vapour phase epitaxial growth perspective. Photoluminescence measurements and transmission electron microscopy were used to evaluate the effect of the growth temperature on the quality of Ga 1-x In x Sb strained layers with varied alloy compositions and thicknesses. Although the various factors contributing to the overall quality of the strained layers are difficult to separate, the quantum well characteristics are significantly altered by the growth temperature. Despite the high growth rates (∼2 nm/s), quantum wells grown at 607 deg. C display photoluminescence emissions with full-width at half-maximum of 3.5-5.0 meV for an indium solid content (x) up to 0.15.

Dislocation-limited electron transport in InSb grown on GaAs(0 0 1)

Energy Technology Data Exchange (ETDEWEB)

Sato, T. [Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan)]. E-mail: taku-s@jaist.ac.jp; Suzuki, T. [Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); Tomiya, S. [Materials Analysis Laboratory, Sony Corporation, 4-16-1 Okata, Atugi, Kanagawa 243-0021 (Japan); Yamada, S. [Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan)

2006-04-01

We investigated dislocations and electrical properties in InSb thin films with various thickness grown on GaAs(0 0 1). It is found that both the threading dislocation density and the local donor concentration decrease in proportion to the inverse of the distance from the InSb/GaAs interface, which indicates that the former is the origin of the latter. This behavior is well explained by pair annihilation mechanism of the threading dislocations. The electron mobility is limited by ionized donor scattering, i.e. charged dislocation scattering.

Thermoelectric properties of p-type Ag{sub 1−x}(Pb{sub 1−y}Sn{sub y}){sub m}Sb{sub 1−z}Te{sub m+2}

Energy Technology Data Exchange (ETDEWEB)

Ahn, Kyunghan [Department of Chemistry, Northwestern University, Evanston, IL 60208 (United States); Center for Nanoparticle Research, Institute for Basic Science, (IBS), Seoul 151-742 (Korea, Republic of); Kong, Huijun; Uher, Ctirad [Department of Physics, University of Michigan, Ann Arbor, MI 48109 (United States); Kanatzidis, Mercouri G., E-mail: m-kanatzidis@northwestern.edu [Department of Chemistry, Northwestern University, Evanston, IL 60208 (United States)

2016-10-15

The thermoelectric properties of Ag{sub 1−x}(Pb{sub 1−y}Sn{sub y}){sub m}Sb{sub 1−z}Te{sub m+2} (4≤m≤16, −0.1≤x≤0.3, 1/3≤y≤2/3, 0.2≤z≤0.4; Lead Antimony Silver Tellurium Tin, LASTT-m) compositions were investigated in the temperature range of 300 to ~670 K. All samples crystallize in the average NaCl-type structure without any noticeable second phase and exhibit very narrow bandgaps of <0.1 eV. We studied a range of m values, silver concentrations (x), Pb/Sn ratios (y), and antimony concentrations (z) to determine their effects on the thermoelectric properties. The samples were investigated as melt grown polycrystalline ingots. Varying the Ag contents, the Pb/Sn ratios, and the Sb contents off-stoichiometry allowed us to control the electrical conductivity, the Seebeck coefficient, and the thermal conductivity. The electrical conductivity tends to decrease with decreasing m values. The highest ZT of ~1.1 was achieved at ~660 K for Ag{sub 0.9}Pb{sub 5}Sn{sub 5}Sb{sub 0.8}Te{sub 12} mainly due to the very low lattice thermal conductivity of ~0.4 W/(m K) around 660 K. Also, samples with charge-balanced stoichiometries, Ag(Pb{sub 1−y}Sn{sub y}){sub m}SbTe{sub m+2}, were studied and found to exhibit a lower power factor and higher lattice thermal conductivity than the Ag{sub 1−x}(Pb{sub 1−y}Sn{sub y}){sub m}Sb{sub 1−z}Te{sub m+2} compositions. - Graphical abstract: The Ag{sub 1−x}(Pb{sub 1−y}Sn{sub y}){sub m}Sb{sub 1−z}Te{sub m+2} system defines a complex and flexible class of tunable thermoelectric class of materials with high performance.

Structure and Chemical Bond of Thermoelectric Ce-Co-Sb Skutterudites

Institute of Scientific and Technical Information of China (English)

无

2001-01-01

The correlations among composition,structure,chemical bond and thermoelectric property of skutterudites CoSb3 and CeCo5Fe3Sb12 have been studied by using density function and discrete variation (DFT-DVM) method.Three models for this study were proposed and calculated by which the "rattling" pattern was described.Model 1 is with Ce in the center,model 2 is with Ce away the center and near to Sb,and model 3 is also with Ce away the center but near to Fe.The calculated results show that in model 3,the ionic bond is the strongest,but the covalent bond is the weakest.Due to the different changes between ionic and covalent bond,there is less difference in the stability among the models 1,2 and 3.Therefore,these different models can exist at the same time,or can translate from one to another more easily.In other words,the "rattling" pattern has taken place.Unfilled model of CoSb3,without Ce and Fe,is called model 4.The covalent bond of Co-Sb or Fe-Sb in models 1,2 and 3 is weaker than that of Co-Sb in model 4,as some electrical cloud of Sb takes part in the covalent bond of Ce-Sb in the filled models.The result is consistent with the experimental result that the thermal conductivity of CeCo5Fe3Sb12 is lower than that of CoSb3,and the thermoelectric property of CeCo5Fe3Sb12 is superior to that of CoSb3.

Enhanced separation efficiency of photoinduced charges for antimony-doped tin oxide (Sb-SnO{sub 2})/TiO{sub 2} heterojunction semiconductors with varied Sb doping concentration

Energy Technology Data Exchange (ETDEWEB)

Zhang, Zhen-Long [School of Physics and Electronics, Henan University, Kaifeng 475004 (China); Ma, Wen-Hai [School of Physical Education, Henan University, Kaifeng 475004 (China); Mao, Yan-Li, E-mail: ylmao1@163.com [School of Physics and Electronics, Henan University, Kaifeng 475004 (China); Institute for Computational Materials Science, Henan University, Kaifeng 475004 (China)

2014-09-07

In this paper, antimony-doped tin oxide (Sb-SnO{sub 2}) nanoparticles were synthesized with varied Sb doping concentration, and the Sb-SnO{sub 2}/TiO{sub 2} heterojunction semiconductors were prepared with Sb-SnO{sub 2} and TiO{sub 2}. The separation efficiency of photoinduced charges was characterized with surface photovoltage (SPV) technique. Compared with Sb-SnO{sub 2} and TiO{sub 2}, Sb-SnO{sub 2}/TiO{sub 2} presents an enhanced separation efficiency of photoinduced charges, and the SPV enhancements were estimated to be 1.40, 1.43, and 1.99 for Sb-SnO{sub 2}/TiO{sub 2} composed of Sb-SnO{sub 2} with the Sb doping concentration of 5%, 10%, and 15%, respectively. To understand the enhancement, the band structure of Sb-SnO{sub 2} and TiO{sub 2} in the heterojunction semiconductor was determined, and the conduction band offsets (CBO) between Sb-SnO{sub 2} and TiO{sub 2} were estimated to be 0.56, 0.64, and 0.98 eV for Sb-SnO{sub 2}/TiO{sub 2} composed of Sb-SnO{sub 2} with the Sb doping concentration of 5%, 10%, and 15%, respectively. These results indicate that the separation efficiency enhancement is resulting from the energy level matching, and the increase of enhancement is due to the rising of CBO.

Raman spectra of the system TeCl4-SbCl5

International Nuclear Information System (INIS)

Brockner, W.; Demiray, A.F.

1980-01-01

Raman spectra of the solid and molten TeCl 4 . SbCl 5 addition compound and of some TeCl 4 -SbCl 5 mixtures have been recorded. Two modifications of the crystalline TeCl 4 -SbCl 5 compound have been found. The structure of the melt can be described by the equilibrium TeCl 3 + + SbCl 6 - reversible TeCl 4 + SbCl 5 lying on the left side. Mixtures with other stoichiometry contain the 1:1 adduct only and excess TeCl 4 or SbCl 5 , respectively. Such melts are built up by the ionic species TeCl 3 + and SbCl 6 - also and TeCl 4 or SbCl 5 according to stoichiometry. (author)

Long-range order in InAsSb

Science.gov (United States)

Jen, H. R.; Ma, K. Y.; Stringfellow, G. B.

1989-03-01

Results are presented of transmission electron diffraction (TED) observations, demonstrating, for the first time, a CuPt-type ordering in InAs(1-x)Sb(x) alloys, over a wide range of x values (from x = 0.22 to 0.88). The InAsSb alloys were prepared by OMVPE on (001) oriented undoped InSb or InAs substrates. The ordering-induced spots on the TED patterns show the highest intensity for x of about 0.5 and the lowest intensity toward each binary end compound. Only two of the four variants are formed during growth. In some areas, the degree of order for these two variants, 1/2(-1 1 1) and 1/2(1 -1 1), is equal, and in other areas, one variant dominates.

SB265610 is an allosteric, inverse agonist at the human CXCR2 receptor

Science.gov (United States)

Bradley, ME; Bond, ME; Manini, J; Brown, Z; Charlton, SJ

2009-01-01

Background and purpose: In several previous studies, the C-X-C chemokine receptor (CXCR)2 antagonist 1-(2-bromo-phenyl)-3-(7-cyano-3H-benzotriazol-4-yl)-urea (SB265610) has been described as binding competitively with the endogenous agonist. This is in contrast to many other chemokine receptor antagonists, where the mechanism of antagonism has been described as allosteric. Experimental approach: To determine whether it displays a unique mechanism among the chemokine receptor antagonists, the mode of action of SB265610 was investigated at the CXCR2 receptor using radioligand and [35S]-GTPγS binding approaches in addition to chemotaxis of human neutrophils. Key results: In equilibrium saturation binding studies, SB265610 depressed the maximal binding of [125I]-interleukin-8 ([125I]-IL-8) without affecting the Kd. In contrast, IL-8 was unable to prevent binding of [3H]-SB265610. Kinetic binding experiments demonstrated that this was not an artefact of irreversible or slowly reversible binding. In functional experiments, SB265610 caused a rightward shift of the concentration-response curves to IL-8 and growth-related oncogene α, but also a reduction in maximal response elicited by each agonist. Fitting these data to an operational allosteric ternary complex model suggested that, once bound, SB265610 completely blocks receptor activation. SB265610 also inhibited basal [35S]-GTPγS binding in this preparation. Conclusions and implications: Taken together, these data suggest that SB265610 behaves as an allosteric inverse agonist at the CXCR2 receptor, binding at a region distinct from the agonist binding site to prevent receptor activation, possibly by interfering with G protein coupling. PMID:19422399

ROSA-V/LSTF vessel top head LOCA tests SB-PV-07 and SB-PV-08 with break sizes of 1.0 and 0.1% and operator recovery actions for core cooling

International Nuclear Information System (INIS)

Suzuki, Mitsuhiro; Takeda, Takeshi; Nakamura, Hideo

2010-02-01

A series of break size parameter tests (SB-PV-07 and SB-PV-08) were conducted at the Large Scale Test Facility (LSTF) of ROSA-V Program by simulating a vessel top small break loss-of-coolant accident (SBLOCA) at a pressurized water reactor (PWR). Typical phenomena to the vessel top break LOCA and effectiveness of operator recovery actions on core cooling were studied under an assumption of total failure of high pressure injection (HPI) system. The LSTF simulates a 4-loop 3423 MWt PWR by a full-height, full-pressure and 1/48 volume scaling two-loop system. Typical phenomena of vessel top break LOCA are clarified for the cases with break sizes of 1.0 and 0.1% cold leg break equivalent. The results from a 0.5% top break LOCA test (SB-PV-02) in the early ROSA-IV Program was referred during discussion. Operator actions of HPI recovery in the 1.0% top break test and steam generator (SG) depressurization in the 0.1% top break test were initiated when temperature at core exit thermocouple (CET) reached 623 K during core boil-off. Both operator actions resulted in immediate recovery of core cooling. Based on the obtained data, several thermal-hydraulic phenomena were discussed further such as relations between vessel top head water level and steam discharge at the break, and between coolant mass inventory transient and core heat-up and quench behavior, and CET performances to detect core heat-up under influences of three-dimensional (3D) steam flows in the core and core exit. (author)

The effects of p38 MAPK inhibition combined with G-CSF administration on the hematoimmune system in mice with irradiation injury.

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Deguan Li

Full Text Available The acute and residual (or long-term bone marrow (BM injury induced by ionizing radiation (IR is a major clinic concern for patients receiving conventional radiotherapy and victims accidentally exposed to a moderate-to-high dose of IR. In this study, we investigated the effects of the treatment with the p38 inhibitor SB203580 (SB and/or granulocyte colony-stimulating factor (G-CSF on the hematoimmune damage induced by IR in a mouse model. Specifically, C57BL/6 mice were exposed to a sublethal dose (6 Gy of total body irradiation (TBI and then treated with vehicle, G-CSF, SB, and G-CSF plus SB. G-CSF (1 µg/mouse was administrated to mice by intraperitoneal (ip injection twice a day for six successive days; SB (15 mg/kg by ip injection every other day for 10 days. It was found that the treatment with SB and/or G-CSF significantly enhanced the recovery of various peripheral blood cell counts and the number of BM mononuclear cells 10 and 30 days after the mice were exposed to TBI compared with vehicle treatment. Moreover, SB and/or G-CSF treatment also increased the clonogenic function of BM hematopoietic progenitor cells (HPCs and the frequency of BM lineage -Sca1+c-kit+ cells (LSK cells and short-term and long term hematopoietic stem cells (HSCs 30 days after TBI, in comparison with vehicle treated controls. However, the recovery of peripheral blood B cells and CD4+ and CD8+ T cells was not significantly affected by SB and/or G-CSF treatment. These results suggest that the treatment with SB and/or G-CSF can reduce IR-induced BM injury probably in part via promoting HSC and HPC regeneration.

Effect of Sb content on the thermoelectric properties of annealed CoSb_3 thin films deposited via RF co-sputtering

International Nuclear Information System (INIS)

Ahmed, Aziz; Han, Seungwoo

2017-01-01

Graphical abstract: The X-ray diffraction patterns and temperature dependence of the Seebeck coefficient of the annealed Co–Sb thin films. - Highlights: • CoSb_3 phase thin films were prepared using RF co sputtering method. • Thin film thermoelectric properties were hugely dependent on Sb content. • All thin films shows n-type conduction behavior at high temperatures. • The thin films with excess Sb possess the largest Seebeck coefficient. • The thin films with CoSb_2 phase possess the largest power factor. - Abstract: A series of CoSb_3 thin films with Sb contents in the range 70–79 at.% were deposited at room temperature via RF co-sputtering. The thin films were amorphous in the as-deposited state and annealed at 300 °C for 3 h to obtain crystalline samples. The annealed thin films were characterized using scanning electron microscopy and X-ray diffraction (XRD), and these data indicate that the films exhibited good crystallinity. The XRD patterns indicate single-phase CoSb_3 thin films in the Sb-rich samples. For the Sb-deficient samples, however, mixed-phase thin films consisting of CoSb_2 and CoSb_3 components were obtained. The electrical and thermoelectric properties were measured at temperatures up to 760 K and found to be highly sensitive to the phases that were present. We observed a change in the thermoelectric properties of the films from p-type at low temperatures to n-type at high temperatures, which indicates potential applications as n-type thermoelectric thin films. A large Seebeck coefficient and power factor was obtained for the single-phase CoSb_3 thin films. The CoSb_2 phase thin films were also found to possess a significant Seebeck coefficient, which coupled with the much smaller electrical resistivity, provided a larger power factor than the single-phase CoSb_3 thin films. We report maximum power factor of 7.92 mW/m K"2 for the CoSb_2-containing mixed phase thin film and 1.26 mW/m K"2 for the stoichiometric CoSb_3 thin film.

5HT(1A) and 5HT(1B) receptors of medial prefrontal cortex modulate anxiogenic-like behaviors in rats.

Science.gov (United States)

Solati, Jalal; Salari, Ali-Akbar; Bakhtiari, Amir

2011-10-31

Medial prefrontal cortex (MPFC) is one of the brain regions which play an important role in emotional behaviors. The purpose of the present study was to evaluate the role of 5HT(1A) and 5HT(1B) receptors of the MPFC in modulation of anxiety behaviors in rats. The elevated plus maze (EPM) which is a useful test to investigate the effects of anxiogenic or anxiolytic drugs in rodents, was used. Bilateral intra-MPFC administration of 5HT(1A) receptor agonist, 8-OH-DPAT (5, 10, and 50 ng/rat) decreased the percentages of open arm time (OAT%) and open arm entries (OAE%), indicating an anxiogenic response. Moreover, administration of 5HT(1A) receptor antagonist, NAN-190 (0.25, 0.5, and 1 μg/rat) significantly increased OAT% and OAE%. Pre-treatment administration of NAN-190 (0.5 μg/rat), which was injected into the MPFC, reversed the anxiogenic effects of 8-OH-DPAT (5, 10, and 50 ng/rat). Intra-MPFC microinjection of 5HT(1B) receptor agonist, CGS-12066A (0.25, 0.5, and 1 μg/rat) significantly decreased OAT% and OAE%, without any change in locomotor activity, indicating an anxiogenic effect. However, injection of 5HT(1B) receptor antagonist, SB-224289 (0.5, 1, and 2 μg/rat) into the MPFC showed no significant effect. In conclusion, these findings suggest that 5HT(1A) and 5HT(1B) receptors of the MPFC region modulate anxiogenic-like behaviors in rats. Copyright © 2011 Elsevier Ireland Ltd. All rights reserved.

The SbSOS1 gene from the extreme halophyte Salicornia brachiata enhances Na(+) loading in xylem and confers salt tolerance in transgenic tobacco.

Science.gov (United States)

Yadav, Narendra Singh; Shukla, Pushp Sheel; Jha, Anupama; Agarwal, Pradeep K; Jha, Bhavanath

2012-10-11

Soil salinity adversely affects plant growth and development and disturbs intracellular ion homeostasis resulting cellular toxicity. The Salt Overly Sensitive 1 (SOS1) gene encodes a plasma membrane Na(+)/H(+) antiporter that plays an important role in imparting salt stress tolerance to plants. Here, we report the cloning and characterisation of the SbSOS1 gene from Salicornia brachiata, an extreme halophyte. The SbSOS1 gene is 3774 bp long and encodes a protein of 1159 amino acids. SbSOS1 exhibited a greater level of constitutive expression in roots than in shoots and was further increased by salt stress. Overexpressing the S. brachiata SbSOS1 gene in tobacco conferred high salt tolerance, promoted seed germination and increased root length, shoot length, leaf area, fresh weight, dry weight, relative water content (RWC), chlorophyll, K(+)/Na(+) ratio, membrane stability index, soluble sugar, proline and amino acid content relative to wild type (WT) plants. Transgenic plants exhibited reductions in electrolyte leakage, reactive oxygen species (ROS) and MDA content in response to salt stress, which probably occurred because of reduced cytosolic Na(+) content and oxidative damage. At higher salt stress, transgenic tobacco plants exhibited reduced Na(+) content in root and leaf and higher concentrations in stem and xylem sap relative to WT, which suggests a role of SbSOS1 in Na(+) loading to xylem from root and leaf tissues. Transgenic lines also showed increased K(+) and Ca(2+) content in root tissue compared to WT, which reflect that SbSOS1 indirectly affects the other transporters activity. Overexpression of SbSOS1 in tobacco conferred a high degree of salt tolerance, enhanced plant growth and altered physiological and biochemical parameters in response to salt stress. In addition to Na(+) efflux outside the plasma membrane, SbSOS1 also helps to maintain variable Na(+) content in different organs and also affect the other transporters activity indirectly. These

Reduction in thermal conductivity of BiSbTe lump

Energy Technology Data Exchange (ETDEWEB)

Ahmad, Kaleem [King Saud University, Sustainable Energy Technologies Center, College of Engineering, PO Box 800, Riyadh (Saudi Arabia); Wan, C. [Tsinghua University, State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Beijing (China); Al-Eshaikh, M.A.; Kadachi, A.N. [King Saud University, Research Center, College of Engineering, PO Box 800, Riyadh (Saudi Arabia)

2017-03-15

In this work, systematic investigations on the thermal conductivities of BiSbTe lump, microstructured pristine BiSbTe bulk and single wall carbon nanotubes (SWCNTs)/BiSbTe bulk nanocomposites were performed. BiSbTe lumps were crushed to form a coarse powder (200 μm) and effect of particle size reduction on the effective thermal conductivity of BiSbTe (200 μm) bulk were analyzed. For further reduction in the conductivity, a two pronged strategy has been employed. First, additional refinement of BiSbTe (200 μm) were performed through ball milling in an inert environment. Second, SWCNTs in 0.75, and 1.0 vol% were distributed uniformly in the fine BiSbTe ball milled powder. The results showed that the effective thermal conductivities decrease with the reduction in the particle size from lump to BiSbTe (200 μm) bulk as well as with the addition of SWCNTs accompanied by further refinement of BiSbTe particles. The significant reduction in thermal conductivities of the lump was achieved for pure BiSbTe (200 μm) bulk and 0.75 vol% of SWCNTs/BiSbTe composite. This can be ascribed to the enhanced phonon scattering by the grain boundaries between the nanostructured BiSbTe particles as well as the interfaces between BiSbTe and the low dimensional carbon nanotubes. (orig.)

Heterogeneous nucleation of Mg2Si on Sr11Sb10 nucleus in Mg–x(3.5, 5 wt.%)Si–1Al alloys

International Nuclear Information System (INIS)

Wang, Hui-Yuan; Chen, Lei; Liu, Bo; Li, Xiao-Ran; Wang, Jin-Guo; Jiang, Qi-Chuan

2012-01-01

After combined additions of Sr and Sb, most primary Mg 2 Si crystals in Mg–3.5Si–1Al and Mg–5Si–1Al alloys transformed from equiaxed-dendritic shapes to octahedral morphologies; while eutectic phases also changed from Chinese script to short rod-shapes. The mechanisms of complex modification of Sr and Sb were attributed to the heterogeneous nucleation of primary Mg 2 Si on Sr 11 Sb 10 nucleus, together with change in growth manners caused by incorporation of Sb in Mg 2 Si crystals. -- Highlights: ► The Sr 11 Sb 10 is the heterogeneous nucleation of primary Mg 2 Si in Mg–3.5Si–1Al alloys. ► Some Sb atoms were incorporated by substituting Si which changed growth manners of primary Mg 2 Si. ► Primary Mg 2 Si transformed from equiaxed-dendritic to octahedral after modification. ► Eutectic phases changed from Chinese script to short rod-shapes after modification.

Crystallographic study of the intermediate compounds SbZn, Sb3Zn4 and Sb2Zn3

International Nuclear Information System (INIS)

Adjadj, Fouzia; Belbacha, El-djemai; Bouharkat, Malek; Kerboub, Abdellah

2006-01-01

The processes of development of semiconductor ceramics made up of bismuth, antimony and zinc often require during their preparation to know the nature of the involved phases. For that, it is always essential to refer to the diagrams of balance between phases of the binary systems or ternary. We presented in this work the study by X-rays diffraction relating to the intermediate compounds SbZn, Sb 3 Zn 4 and Sb 2 Zn 3 . The analysis by X-rays is often useful to give supplement the results of the other experimental methods

The Effect of SbI3 Doping on the Structure and Electrical Properties of n-Type Bi1.8Sb0.2Te2.85Se0.15 Alloy Prepared by the Free Growth Method

Science.gov (United States)

Wang, Xiaoyu; Yu, Yuan; Zhu, Bin; Gao, Na; Huang, Zhongyue; Xiang, Bo; Zu, Fangqiu

2018-02-01

Thermoelectric technology is regarded as one of the most promising direct power generation techniques via thermoelectric materials. However, the batch production and scale-up application are hindered because of the high-cost and poor performance. In this work, we adopt the free growth method to synthesize a series of the bulk materials of SbI3-doped Bi1.8Sb0.2Te2.85Se0.15 alloys. The structural and component investigations as well as the electrical properties characterization are carried out. The results show that SbI3 promotes the formation of Te-rich regions in the matrix. In addition, the synergistically optimized electrical conductivity and Seebeck coefficient are attained by controlling the SbI3 doping concentration. Thus, the sample with 0.30 wt.% SbI3 displays a highly increased power factor of ˜ 13.57 μW cm-1 K-2, which is nearly 21 times higher than that of the undoped one. Moreover, the free growth method is reproducible, convenient and economical. Therefore, it has great potential as a promising technology for the batch synthesis.

Sb-related defects in Sb-doped ZnO thin film grown by pulsed laser deposition

Science.gov (United States)

Luo, Caiqin; Ho, Lok-Ping; Azad, Fahad; Anwand, Wolfgang; Butterling, Maik; Wagner, Andreas; Kuznetsov, Andrej; Zhu, Hai; Su, Shichen; Ling, Francis Chi-Chung

2018-04-01

Sb-doped ZnO films were fabricated on c-plane sapphire using the pulsed laser deposition method and characterized by Hall effect measurement, X-ray photoelectron spectroscopy, X-ray diffraction, photoluminescence, and positron annihilation spectroscopy. Systematic studies on the growth conditions with different Sb composition, oxygen pressure, and post-growth annealing were conducted. If the Sb doping concentration is lower than the threshold ˜8 × 1020 cm-3, the as-grown films grown with an appropriate oxygen pressure could be n˜4 × 1020 cm-3. The shallow donor was attributed to the SbZn related defect. Annealing these samples led to the formation of the SbZn-2VZn shallow acceptor which subsequently compensated for the free carrier. For samples with Sb concentration exceeding the threshold, the yielded as-grown samples were highly resistive. X-ray diffraction results showed that the Sb dopant occupied the O site rather than the Zn site as the Sb doping exceeded the threshold, whereas the SbO related deep acceptor was responsible for the high resistivity of the samples.

Photoelectrochemical cell including Ga(Sb.sub.x)N.sub.1-x semiconductor electrode

Science.gov (United States)

Menon, Madhu; Sheetz, Michael; Sunkara, Mahendra Kumar; Pendyala, Chandrashekhar; Sunkara, Swathi; Jasinski, Jacek B.

2017-09-05

The composition of matter comprising Ga(Sb.sub.x)N.sub.1-x where x=0.01 to 0.06 is characterized by a band gap between 2.4 and 1.7 eV. A semiconductor device includes a semiconductor layer of that composition. A photoelectric cell includes that semiconductor device.

KFeSbTe3: A quaternary chalcogenide aerogel for preferential adsorption of polarizable hydrocarbons and gases

KAUST Repository

Ahmed, Ejaz

2015-01-01

The first telluride-based quaternary aerogel KFeSbTe3 is synthesized by a sol-gel metathesis reaction between Fe(OAc)2 and K3SbTe3 in dimethyl formamide. The aerogel has an exceptionally large surface area 652 m2 g-1 which is amongst the highest reported for chalcogenide-based aerogels. This predominantly mesoporous material shows preferential adsorption for toluene vapors over cyclohexane or cyclopentane and CO2 over CH4 or H2. The remarkably high adsorption capacity for toluene (9.31 mmol g-1) and high selectivity for gases (CO2/H2: 121 and CO2/CH4: 75) suggest a potential use of such materials in adsorption-based separation processes for the effective purification of hydrocarbons and gases. © The Royal Society of Chemistry 2015.

Thermoelectric properties of p-type (Bi{sub 1{minus}x}Sb{sub x}){sub 2}Te{sub 3} fabricated by mechanical alloying process

Energy Technology Data Exchange (ETDEWEB)

Jung, B Y; Choi, J S; Oh, T S; Hyun, D B

1997-07-01

Thermoelectric properties of polycrystalline (Bi{sub 1{minus}x}Sb{sub x}){sub 2}Te{sub 3} (0.75 {le} x {le} 0.85), fabricated by mechanical alloying and hot pressing methods, have been investigated. Formation of (Bi{sub 0.25}Sb{sub 0.75}){sub 2}Te{sub 3} alloy powder was completed by mechanical alloying for 5 hours at ball-to-material ratio of 5:1, and processing time for (Bi{sub 1{minus}sub x}Sb{sub x}){sub 2}Te{sub 3} formation increased with Sb{sub 2}Te{sub 3} content x. When (Bi{sub 0.25}Sb{sub 0.75}){sub 2}Te{sub 3} was hot pressed at temperatures ranging from 300 C to 550 C for 30 minutes, figure-of-merit increased with hot pressing temperature and maximum value of 2.8 x 10{sup {minus}3}/K could be obtained by hot pressing at 550 C. When hot pressed at 550 C, (Bi{sub 0.2}Sb{sub 0.8}){sub 2}Te{sub 3} exhibited figure-of-merit of 2.92 x 10{sup {minus}3}/K, which could be improved to 2.97 x 10{sup {minus}3}/K with addition of 1 wt% Sb as acceptor dopant.

Analytical evaluation of the novel Lumipulse G BRAHMS procalcitonin immunoassay

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Orazio Ruzzenente

2016-12-01

Full Text Available Objectives: This study was designed to evaluate the analytical performance of the novel Lumipulse G1200 BRAHMS procalcitonin (PCT immunoassay. Design and methods: This analytical evaluation encompassed the calculation of the limit of blank (LOB, limit of detection (LOD, functional sensitivity, intra- and inter-assay imprecision, confirmation of linearity and a comparison with the Vidas BRAHMS PCT assay. Results: The LOB, LOD and functional sensitivity were 0.0010 ng/mL, 0.0016 ng/mL and 0.008 ng/mL, respectively. The total analytical imprecision was found to be 2.1% and the linearity was excellent (r=1.00 in the range of concentrations between 0.006–75.5 ng/mL. The correlation coefficient with Vidas BRAHMS PCT was 0.995 and the equation of the Passing and Bablok regression analysis was [Lumipulse G BRAHMS PCT]=0.76×[Vidas BRAHMS PCT]+0.04. The mean overall bias of Lumipulse G BRAHMS PCT versus Vidas BRAHMS PCT was −3.03 ng/mL (95% confidence interval [CI]: −4.32 to −1.74 ng/mL, whereas the mean bias in samples with PCT concentration between 0–10 ng/mL was −0.49 ng/mL (95% CI: −0.77 to −0.24 ng/mL. The diagnostic agreement was 100% at 0.5 ng/mL, 97% at 2.0 ng/mL and 95% at 10 ng/mL, respectively. Conclusions: These results attest that Lumipulse G BRAHMS PCT exhibits excellent analytical performance, among the best of the methods currently available on the diagnostic market. However, the significant bias compared to the Vidas BRAHMS PCT suggests that the methods cannot be used interchangeably. Keywords: Sepsis, Infection, Procalcitonin, Immunoassay

Modelling of aflatoxin G1 reduction by kefir grain using response surface methodology.

Science.gov (United States)

Ansari, Farzaneh; Khodaiyan, Faramarz; Rezaei, Karamatollah; Rahmani, Anosheh

2015-01-01

Aflatoxin G1 (AFG1) is one of the main toxic contaminants in pistachio nuts and causes potential health hazards. Hence, AFG1 reduction is one of the main concerns in food safety. Kefir-grains contain symbiotic association of microorganisms well known for their aflatoxin decontamination effects. In this study, a central composite design (CCD) using response surface methodology (RSM) was applied to develop a model in order to predict AFG1 reduction in pistachio nuts by kefir-grain (already heated at 70 and 110°C). The independent variables were: toxin concentration (X1: 5, 10, 15, 20 and 25 ng/g), kefir-grain level (X2: 5, 10, 20, 10 and 25%), contact time (X3: 0, 2, 4, 6 and 8 h), and incubation temperature (X4: 20, 30, 40, 50 and 60°C). There was a significant reduction in AFG1 (p kefir-grain used. The variables including X1, X3 and the interactions between X2-X4 as well as X3-X4 have significant effects on AFG1 reduction. The model provided a good prediction of AFG1 reduction under the assay conditions. Optimization was used to enhance the efficiency of kefir-grain on AFG1 reduction. The optimum conditions for the highest AFG1 reduction (96.8%) were predicted by the model as follows: toxin concentration = 20 ng/g, kefir-grain level = 10%, contact time = 6 h, and incubation temperature = 30°C which validated practically in six replications.

Broad antibody mediated cross-neutralization and preclinical immunogenicity of new codon-optimized HIV-1 clade CRF02_AG and G primary isolates.

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Simon M Agwale

Full Text Available Creation of an effective vaccine for HIV has been an elusive goal of the scientific community for almost 30 years. Neutralizing antibodies are assumed to be pivotal to the success of a prophylactic vaccine but previous attempts to make an immunogen capable of generating neutralizing antibodies to primary "street strain" isolates have resulted in responses of very limited breadth and potency. The objective of the study was to determine the breadth and strength of neutralizing antibodies against autologous and heterologous primary isolates in a cohort of HIV-1 infected Nigerians and to characterize envelopes from subjects with particularly broad or strong immune responses for possible use as vaccine candidates in regions predominated by HIV-1 CRF02_AG and G subtypes. Envelope vectors from a panel of primary Nigerian isolates were constructed and tested with plasma/sera from the same cohort using the PhenoSense HIV neutralizing antibody assay (Monogram Biosciences Inc, USA to assess the breadth and potency of neutralizing antibodies. The immediate goal of this study was realized by the recognition of three broadly cross-neutralizing sera: (NG2-clade CRF02_AG, NG3-clade CRF02_AG and NG9- clade G. Based on these findings, envelope gp140 sequences from NG2 and NG9, complemented with a gag sequence (Clade G and consensus tat (CRF02_AG and G antigens have been codon-optimized, synthesized, cloned and evaluated in BALB/c mice. The intramuscular administration of these plasmid DNA constructs, followed by two booster DNA immunizations, induced substantial specific humoral response against all constructs and strong cellular responses against the gag and tat constructs. These preclinical findings provide a framework for the design of candidate vaccine for use in regions where the HIV-1 epidemic is driven by clades CRF02_AG and G.

Broad antibody mediated cross-neutralization and preclinical immunogenicity of new codon-optimized HIV-1 clade CRF02_AG and G primary isolates.

Science.gov (United States)

Agwale, Simon M; Forbi, Joseph C; Notka, Frank; Wrin, Terri; Wild, Jens; Wagner, Ralf; Wolf, Hans

2011-01-01

Creation of an effective vaccine for HIV has been an elusive goal of the scientific community for almost 30 years. Neutralizing antibodies are assumed to be pivotal to the success of a prophylactic vaccine but previous attempts to make an immunogen capable of generating neutralizing antibodies to primary "street strain" isolates have resulted in responses of very limited breadth and potency. The objective of the study was to determine the breadth and strength of neutralizing antibodies against autologous and heterologous primary isolates in a cohort of HIV-1 infected Nigerians and to characterize envelopes from subjects with particularly broad or strong immune responses for possible use as vaccine candidates in regions predominated by HIV-1 CRF02_AG and G subtypes. Envelope vectors from a panel of primary Nigerian isolates were constructed and tested with plasma/sera from the same cohort using the PhenoSense HIV neutralizing antibody assay (Monogram Biosciences Inc, USA) to assess the breadth and potency of neutralizing antibodies. The immediate goal of this study was realized by the recognition of three broadly cross-neutralizing sera: (NG2-clade CRF02_AG, NG3-clade CRF02_AG and NG9- clade G). Based on these findings, envelope gp140 sequences from NG2 and NG9, complemented with a gag sequence (Clade G) and consensus tat (CRF02_AG and G) antigens have been codon-optimized, synthesized, cloned and evaluated in BALB/c mice. The intramuscular administration of these plasmid DNA constructs, followed by two booster DNA immunizations, induced substantial specific humoral response against all constructs and strong cellular responses against the gag and tat constructs. These preclinical findings provide a framework for the design of candidate vaccine for use in regions where the HIV-1 epidemic is driven by clades CRF02_AG and G.

Removal of Sb(III and Sb(V by Ferric Chloride Coagulation: Implications of Fe Solubility

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Muhammad Ali Inam

2018-04-01

Full Text Available Coagulation and precipitation appear to be the most efficient and economical methods for the removal of antimony from aqueous solution. In this study, antimony removal from synthetic water and Fe solubility with ferric chloride (FC coagulation has been investigated. The effects of pH, FC dosage, initial antimony loading and mixed Sb(III, Sb(V proportions on Fe solubility and antimony removal were studied. The results showed that the Sb(III removal efficiency increased with the increase of solution pH particularly due to an increase in Fe precipitation. The Sb(V removal was influenced by the solution pH due to a change in Fe solubility. However, the Fe solubility was only impaired by the Sb(III species at optimum pH 7. The removal efficiencies of both Sb species were enhanced with an increase in FC dose. The quantitative analysis of the isotherm study revealed the strong adsorption potential of Sb(III on Fe precipitates as compared to Sb(V. Furthermore, the removal behavior of antimony was inhibited in mixed proportion with high Sb(V fraction. In conclusion, this study contributes to better understanding the fate of Sb species, their mobilities, and comparative removal behavior, with implications for Fe solubility using ferric chloride in different aqueous environments.

Effects of Dăoyĭn Qìgōng in postpolio syndrome patients with cold intolerance

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Paulo Eduardo Ramos

2012-09-01

Full Text Available Postpolio syndrome (PPS is characterized by progressive muscle weakness due to former infection with poliomyelitis and can be associated with other symptoms such as cold intolerance (CI. Dăoyĭn Qìgōng (DQ is a technique in Traditional Chinese Medicine that impacts the circulation of energy and blood. OBJECTIVE: It was to verify the effects of DQ in PPS patients complaining of cold intolerance. METHODS: Ten PPS patients were assessed using the visual analogue scale (VAS adapted for CI before and after intervention with DQ; patients practiced it in a sitting position for 40 minutes, 3 times per week over 3 consecutive months. Patients were reassessed three months after ceasing DQ. RESULTS: There was a statistically significant difference in local and systemic VAS-Cold both at the end of DQ training and three months past the end of this. CONCLUSION: The DQ technique ameliorated CI complaints in patients with PPS.

The direct determination, by differential pulse anodic-stripping voltammetry at the thin mercury-film electrode, of cadmium, lead and copper

International Nuclear Information System (INIS)

Lee, A.F.

1981-01-01

This report describes the development and application of a voltammetric procedure for the direct, simultaneous determination of cadmium, lead, and copper in three SAROC reference materials (carbonatite, magnesite, and quartz). The electrolyte was a mixture of 1 M ammonium chloride, 0,1 M citric acid, and 0,025 M ascorbic acid. No interferences were encountered from Fe(III), As(III), Sb(V), Tl(I), or In(III) at the concentrations present in the samples. Intermetallic interferences were eliminated by the use of thin mercury-film electrodes not less than 80nm thick. Limits of detection were determined by the degree to which the supporting electrolyte could be purified, and were estimated to be 10ng/g, 250ng/g, and 150ng/g for cadmium, lead, and copper respectively

Oxidation of 1-butene over uranium oxide (UO3)-antimony oxide (Sb2O3) catalysts

NARCIS (Netherlands)

Simons, T.; Houtman, P.N.; Schuit, G.C.A.

1971-01-01

The oxidative dehydrogenation of butene to butadiene over U-Sb catalysts was investigated. The presence of two compds., (UO2)Sb3O7 and Sb3U3O14, reported by Grasselli and Callahan (1969), was confirmed with (UO2)Sb3O7 being the actual catalyst. The reaction is first order in butene and zero order in

New Insights into the Origins of Sb-Induced Effects on Self-Catalyzed GaAsSb Nanowire Arrays.

Science.gov (United States)

Ren, Dingding; Dheeraj, Dasa L; Jin, Chengjun; Nilsen, Julie S; Huh, Junghwan; Reinertsen, Johannes F; Munshi, A Mazid; Gustafsson, Anders; van Helvoort, Antonius T J; Weman, Helge; Fimland, Bjørn-Ove

2016-02-10

Ternary semiconductor nanowire arrays enable scalable fabrication of nano-optoelectronic devices with tunable bandgap. However, the lack of insight into the effects of the incorporation of Vy element results in lack of control on the growth of ternary III-V(1-y)Vy nanowires and hinders the development of high-performance nanowire devices based on such ternaries. Here, we report on the origins of Sb-induced effects affecting the morphology and crystal structure of self-catalyzed GaAsSb nanowire arrays. The nanowire growth by molecular beam epitaxy is changed both kinetically and thermodynamically by the introduction of Sb. An anomalous decrease of the axial growth rate with increased Sb2 flux is found to be due to both the indirect kinetic influence via the Ga adatom diffusion induced catalyst geometry evolution and the direct composition modulation. From the fundamental growth analyses and the crystal phase evolution mechanism proposed in this Letter, the phase transition/stability in catalyst-assisted ternary III-V-V nanowire growth can be well explained. Wavelength tunability with good homogeneity of the optical emission from the self-catalyzed GaAsSb nanowire arrays with high crystal phase purity is demonstrated by only adjusting the Sb2 flux.

Effect of Sb content on the thermoelectric properties of annealed CoSb{sub 3} thin films deposited via RF co-sputtering

Energy Technology Data Exchange (ETDEWEB)

Ahmed, Aziz, E-mail: aziz_ahmed@ust.ac.kr [Department of Nano-Mechatronics, Korea University of Science and Technology (UST), 217 Gajeong-ro, Yuseong-gu, Daejeon, 305-350 (Korea, Republic of); Department of Nano-Mechanics, Korea Institute of Machinery and Materials (KIMM), 156 Gajeongbuk-ro, Yuseong-gu, Daejeon, 305-343 (Korea, Republic of); Han, Seungwoo, E-mail: swhan@kimm.re.kr [Department of Nano-Mechatronics, Korea University of Science and Technology (UST), 217 Gajeong-ro, Yuseong-gu, Daejeon, 305-350 (Korea, Republic of); Department of Nano-Mechanics, Korea Institute of Machinery and Materials (KIMM), 156 Gajeongbuk-ro, Yuseong-gu, Daejeon, 305-343 (Korea, Republic of)

2017-06-30

Graphical abstract: The X-ray diffraction patterns and temperature dependence of the Seebeck coefficient of the annealed Co–Sb thin films. - Highlights: • CoSb{sub 3} phase thin films were prepared using RF co sputtering method. • Thin film thermoelectric properties were hugely dependent on Sb content. • All thin films shows n-type conduction behavior at high temperatures. • The thin films with excess Sb possess the largest Seebeck coefficient. • The thin films with CoSb{sub 2} phase possess the largest power factor. - Abstract: A series of CoSb{sub 3} thin films with Sb contents in the range 70–79 at.% were deposited at room temperature via RF co-sputtering. The thin films were amorphous in the as-deposited state and annealed at 300 °C for 3 h to obtain crystalline samples. The annealed thin films were characterized using scanning electron microscopy and X-ray diffraction (XRD), and these data indicate that the films exhibited good crystallinity. The XRD patterns indicate single-phase CoSb{sub 3} thin films in the Sb-rich samples. For the Sb-deficient samples, however, mixed-phase thin films consisting of CoSb{sub 2} and CoSb{sub 3} components were obtained. The electrical and thermoelectric properties were measured at temperatures up to 760 K and found to be highly sensitive to the phases that were present. We observed a change in the thermoelectric properties of the films from p-type at low temperatures to n-type at high temperatures, which indicates potential applications as n-type thermoelectric thin films. A large Seebeck coefficient and power factor was obtained for the single-phase CoSb{sub 3} thin films. The CoSb{sub 2} phase thin films were also found to possess a significant Seebeck coefficient, which coupled with the much smaller electrical resistivity, provided a larger power factor than the single-phase CoSb{sub 3} thin films. We report maximum power factor of 7.92 mW/m K{sup 2} for the CoSb{sub 2}-containing mixed phase thin film and 1

Grain boundary engineering with nano-scale InSb producing high performance InxCeyCo4Sb12+z skutterudite thermoelectrics

Directory of Open Access Journals (Sweden)

Han Li

2017-12-01

Full Text Available Thermoelectric semiconductors based on CoSb3 hold the best promise for recovering industrial or automotive waste heat because of their high efficiency and relatively abundant, lead-free constituent elements. However, higher efficiency is needed before thermoelectrics reach economic viability for widespread use. In this study, n-type InxCeyCo4Sb12+z skutterudites with high thermoelectric performance are produced by combining several phonon scattering mechanisms in a panoscopic synthesis. Using melt spinning followed by spark plasma sintering (MS-SPS, bulk InxCeyCo4Sb12+z alloys are formed with grain boundaries decorated with nano-phase of InSb. The skutterudite matrix has grains on a scale of 100–200 nm and the InSb nano-phase with a typical size of 5–15 nm is evenly dispersed at the grain boundaries of the skutterudite matrix. Coupled with the presence of defects on the Sb sublattice, this multi-scale nanometer structure is exceptionally effective in scattering phonons and, therefore, InxCeyCo4Sb12/InSb nano-composites have very low lattice thermal conductivity and high zT values reaching in excess of 1.5 at 800 K.

Very smooth FeSb.sub.2./sub.Te and Ce.sub.0.1./sub.Fe.sub.0.7./sub.Co.sub.3.3./sub.Sb.sub.12./sub. layers prepared by modified PLD

Czech Academy of Sciences Publication Activity Database

Remsa, Jan; Jelínek, Miroslav; Kocourek, Tomáš; Zeipl, Radek; Navrátil, Jiří

2016-01-01

Roč. 45, č. 3 (2016), s. 1921-1926 ISSN 0361-5235 R&D Projects: GA ČR(CZ) GA13-33056S Institutional support: RVO:68378271 ; RVO:61389013 Keywords : PLD * RTA * thermoelectric layer * Harman * FeSb 2 Te * Ce 0.1 Fe 0.7 Co 3.3 Sb 12 Subject RIV: BM - Solid Matter Physics ; Magnetism; CD - Macromolecular Chemistry (UMCH-V) Impact factor: 1.579, year: 2016

Electronic structure and high pressure phase transition in LaSb and CeSb

International Nuclear Information System (INIS)

Mathi Jaya, S.; Sanyal, S.P.

1992-09-01

The electronic structure and high pressure structural phase transition in cerium and lanthanum antimonides have been investigated using the tight binding LMTO method. The calculation of total energy reveals that the simple tetragonal structure is found to be stable at high pressures for both the compounds. In the case of LaSb, the calculated value of the equilibrium cell volume and the cell volume at which phase transition occurs are found to have a fairly good agreement with the experimental results. However, in the case of CeSb, the agreement is not as good as in LaSb. We also predicted the most favoured c/a value in the high pressure phase (simple tetragonal) for these compounds. Further we present the calculated results on the electronic structure of these systems at the equilibrium as well as at the reduced cell volumes. (author). 8 refs, 11 figs, 1 tab

The SbSOS1 gene from the extreme halophyte Salicornia brachiata enhances Na+ loading in xylem and confers salt tolerance in transgenic tobacco

Directory of Open Access Journals (Sweden)

Yadav Narendra

2012-10-01

Full Text Available Abstract Background Soil salinity adversely affects plant growth and development and disturbs intracellular ion homeostasis resulting cellular toxicity. The Salt Overly Sensitive 1 (SOS1 gene encodes a plasma membrane Na+/H+ antiporter that plays an important role in imparting salt stress tolerance to plants. Here, we report the cloning and characterisation of the SbSOS1 gene from Salicornia brachiata, an extreme halophyte. Results The SbSOS1 gene is 3774 bp long and encodes a protein of 1159 amino acids. SbSOS1 exhibited a greater level of constitutive expression in roots than in shoots and was further increased by salt stress. Overexpressing the S. brachiata SbSOS1 gene in tobacco conferred high salt tolerance, promoted seed germination and increased root length, shoot length, leaf area, fresh weight, dry weight, relative water content (RWC, chlorophyll, K+/Na+ ratio, membrane stability index, soluble sugar, proline and amino acid content relative to wild type (WT plants. Transgenic plants exhibited reductions in electrolyte leakage, reactive oxygen species (ROS and MDA content in response to salt stress, which probably occurred because of reduced cytosolic Na+ content and oxidative damage. At higher salt stress, transgenic tobacco plants exhibited reduced Na+ content in root and leaf and higher concentrations in stem and xylem sap relative to WT, which suggests a role of SbSOS1 in Na+ loading to xylem from root and leaf tissues. Transgenic lines also showed increased K+ and Ca2+ content in root tissue compared to WT, which reflect that SbSOS1 indirectly affects the other transporters activity. Conclusions Overexpression of SbSOS1 in tobacco conferred a high degree of salt tolerance, enhanced plant growth and altered physiological and biochemical parameters in response to salt stress. In addition to Na+ efflux outside the plasma membrane, SbSOS1 also helps to maintain variable Na+ content in different organs and also affect the other

The SbSOS1 gene from the extreme halophyte Salicornia brachiata enhances Na+ loading in xylem and confers salt tolerance in transgenic tobacco

Science.gov (United States)

2012-01-01

Background Soil salinity adversely affects plant growth and development and disturbs intracellular ion homeostasis resulting cellular toxicity. The Salt Overly Sensitive 1 (SOS1) gene encodes a plasma membrane Na+/H+ antiporter that plays an important role in imparting salt stress tolerance to plants. Here, we report the cloning and characterisation of the SbSOS1 gene from Salicornia brachiata, an extreme halophyte. Results The SbSOS1 gene is 3774 bp long and encodes a protein of 1159 amino acids. SbSOS1 exhibited a greater level of constitutive expression in roots than in shoots and was further increased by salt stress. Overexpressing the S. brachiata SbSOS1 gene in tobacco conferred high salt tolerance, promoted seed germination and increased root length, shoot length, leaf area, fresh weight, dry weight, relative water content (RWC), chlorophyll, K+/Na+ ratio, membrane stability index, soluble sugar, proline and amino acid content relative to wild type (WT) plants. Transgenic plants exhibited reductions in electrolyte leakage, reactive oxygen species (ROS) and MDA content in response to salt stress, which probably occurred because of reduced cytosolic Na+ content and oxidative damage. At higher salt stress, transgenic tobacco plants exhibited reduced Na+ content in root and leaf and higher concentrations in stem and xylem sap relative to WT, which suggests a role of SbSOS1 in Na+ loading to xylem from root and leaf tissues. Transgenic lines also showed increased K+ and Ca2+ content in root tissue compared to WT, which reflect that SbSOS1 indirectly affects the other transporters activity. Conclusions Overexpression of SbSOS1 in tobacco conferred a high degree of salt tolerance, enhanced plant growth and altered physiological and biochemical parameters in response to salt stress. In addition to Na+ efflux outside the plasma membrane, SbSOS1 also helps to maintain variable Na+ content in different organs and also affect the other transporters activity indirectly

Photoreduction of Carbon Dioxide to Methane Over Sb1.5Sn8.5-x Ti x O19.0 with High Conductivity.

Science.gov (United States)

Do, Jeong Yeon; Kwak, Byeong Sub; Kang, Misook

2018-09-01

In order to enhance the photoreduction of CO2 to CH4, a new type of photocatalyst, Sb1.5Sn8.5-xTixO19.0, with high conductivity and low bandgap was developed by partially incorporating Ti into the framework of Sb1.5Sn8.5O19.0 (antimony-doped tin oxide, ATO) using a controlled hydrothermal method. XRD and TEM analyses indicated that the Sb1.5Sn8.5-xTixO19.0 particles exhibited a tetragonal crystal structure and were approximately 20 nm in size. Furthermore, the bandgap and conductivity of these materials increased with increasing Ti content. A study of the photoreduction of CO2 with H2O revealed a remarkable increase in the generation of CH4 over the Sb1.5Sn8.5-xTixO19.0 catalysts. In particular, CH4 generation was the highest when Sb1.5Sn8.5Ti1.0O19.0 was used as the photocatalyst, and was three-fold higher than that achieved by using anatase TiO2. Photoluminescence studies showed that the enhanced photocatalytic activity of the Sb1.5Sn8.5-xTixO19.0 materials could be attributed to the interfacial transfer of photogenerated charges, which led to an effective charge separation and inhibition of the recombination of photogenerated electron-hole (e-/h+) pairs.

Phase transitions in thin films of Sn-Sb-Se system

International Nuclear Information System (INIS)

Samsudi Sakrani; Abdalla Belal Adam; Yussof Wahab

1998-01-01

The preparation and formation of covalent ternary Sn-Sb-Se system were investigated. A solid state reaction technique was employed whereby the evaporated multilayers of Sn/Se/Sb/Sn reacted chemically at a fixed temperature of 240 o C and were allowed to a room temperature slow-cooling. X-ray diffraction analysis showed that phase changes occurred in the system, with indication of amorphization for the predicted Sn 9 .3Sb 8 .1Se 4 4.9 and Sn 1 3.2Sb 4 3.4Se 4 3.4 compositions. These enabled the preliminary topological phase transitions of Sn-Sb-Se system according to the Gibb's triangle in which the areas of crystalline-amorphous were located. (Author)

SULFURIC ACID CORROSION OF LOW Sb - Pb BATTERY ALLOYS

African Journals Online (AJOL)

user

1983-09-01

Sep 1, 1983 ... (Manuscript received February,1983). ABSTRACT. The corrosion properties of low Sb - Pb alloys developed for maintenance free motive power industrial batteries was studied by a bare grid constant current method and compared to those of the conventional. Pb- 6% Sb alloy. Low Sb-Pb alloys with Se and ...

Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/p(n)-GaSb type II heterostructures with deep quantum wells at the interface

Czech Academy of Sciences Publication Activity Database

Mikhailova, M. P.; Ivanov, E.V.; Moiseev, K. D.; Yakovlev, Yu. P.; Hulicius, Eduard; Hospodková, Alice; Pangrác, Jiří; Šimeček, Tomislav

2010-01-01

Roč. 44, č. 1 (2010), 66-71 ISSN 1063-7826 Institutional research plan: CEZ:AV0Z10100521 Keywords : electroluninescence * MOVPE * GaSb * InAs * quantum well Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.603, year: 2010

Percent free prostate-specific antigen is effective to predict prostate biopsy outcome in Chinese men with prostate-specific antigen between 10.1 and 20.0 ng ml−1

Science.gov (United States)

Chen, Rui; Zhou, Li-Qun; Cai, Xiao-Bing; Xie, Li-Ping; Huang, Yi-Ran; He, Da-Lin; Gao, Xu; Xu, Chuan-Liang; Ding, Qiang; Wei, Qiang; Yin, Chang-Jun; Ren, Shan-Cheng; Wang, Fu-Bo; Tian, Ye; Sun, Zhong-Quan; Fu, Qiang; Ma, Lu-Lin; Zheng, Jun-Hua; Ye, Zhang-Qun; Ye, Ding-Wei; Xu, Dan-Feng; Hou, Jian-Quan; Xu, Ke-Xin; Yuan, Jian-Lin; Gao, Xin; Liu, Chun-Xiao; Pan, Tie-Jun; Sun, Ying-Hao

2015-01-01

Percent free prostatic-specific antigen (%fPSA) has been introduced as a tool to avoid unnecessary biopsies in patients with a serum PSA level of 4.0–10.0 ng ml−1, however, it remains controversial whether %fPSA is effective in PSA range of 10.1–20.0 ng ml−1 in both Chinese and Western population. In this study, the diagnostic performance of %fPSA and serum PSA in predicting prostate cancer (PCa) and high-grade PCa (HGPCa) was analyzed in a multi-center biopsy cohort of 5915 consecutive Chinese patients who underwent prostate biopsy in 22 hospitals across China from January 1, 2010 to December 31, 2013. The indication for biopsy was PSA>4.0 ng ml−1 or/and suspicious digital rectal examination. Total and free serum PSA determinations were performed by three types of electrochemiluminescence immunoassays with recalibration to the World Health Organization standards. The diagnostics accuracy of PSA, %fPSA and %fPSA in combination with PSA (%fPSA + PSA) was determined by the area under the receivers operating characteristic curve (AUC). %fPSA was more effective than PSA in men aged ≥60 years old. The AUC was 0.584 and 0.635 in men aged ≥60 years old with a PSA of 4.0–10.0 ng ml−1 and 10.1–20.0 ng ml−1, respectively. The AUC of %fPSA was superior to that of PSA in predicting HGPCa in patients ≥60 years old in these two PSA range. Our results indicated that %fPSA is both statistically effective and clinical applicable to predict prostate biopsy outcome in Chinese patients aged ≥60 years old with a PSA of 4.0–10.0 ng ml−1 and 10.1–20.0 ng ml−1. PMID:25926603

Percent free prostate-specific antigen is effective to predict prostate biopsy outcome in Chinese men with prostate-specific antigen between 10.1 and 20.0 ng ml(-1).

Science.gov (United States)

Chen, Rui; Zhou, Li-Qun; Cai, Xiao-Bing; Xie, Li-Ping; Huang, Yi-Ran; He, Da-Lin; Gao, Xu; Xu, Chuan-Liang; Ding, Qiang; Wei, Qiang; Yin, Chang-Jun; Ren, Shan-Cheng; Wang, Fu-Bo; Tian, Ye; Sun, Zhong-Quan; Fu, Qiang; Ma, Lu-Lin; Zheng, Jun-Hua; Ye, Zhang-Qun; Ye, Ding-Wei; Xu, Dan-Feng; Hou, Jian-Quan; Xu, Ke-Xin; Yuan, Jian-Lin; Gao, Xin; Liu, Chun-Xiao; Pan, Tie-Jun; Sun, Ying-Hao

2015-01-01

Percent free prostatic-specific antigen (%fPSA) has been introduced as a tool to avoid unnecessary biopsies in patients with a serum PSA level of 4.0-10.0 ng ml-1 , however, it remains controversial whether %fPSA is effective in PSA range of 10.1-20.0 ng ml-1 in both Chinese and Western population. In this study, the diagnostic performance of %fPSA and serum PSA in predicting prostate cancer (PCa) and high-grade PCa (HGPCa) was analyzed in a multi-center biopsy cohort of 5915 consecutive Chinese patients who underwent prostate biopsy in 22 hospitals across China from January 1, 2010 to December 31, 2013. The indication for biopsy was PSA>4.0 ng ml-1 or/and suspicious digital rectal examination. Total and free serum PSA determinations were performed by three types of electrochemiluminescence immunoassays with recalibration to the World Health Organization standards. The diagnostics accuracy of PSA, %fPSA and %fPSA in combination with PSA (%fPSA + PSA) was determined by the area under the receivers operating characteristic curve (AUC). %fPSA was more effective than PSA in men aged ≥60 years old. The AUC was 0.584 and 0.635 in men aged ≥60 years old with a PSA of 4.0-10.0 ng ml-1 and 10.1-20.0 ng ml-1 , respectively. The AUC of %fPSA was superior to that of PSA in predicting HGPCa in patients ≥60 years old in these two PSA range. Our results indicated that %fPSA is both statistically effective and clinical applicable to predict prostate biopsy outcome in Chinese patients aged ≥60 years old with a PSA of 4.0-10.0 ng ml-1 and 10.1-20.0 ng ml-1 .

Near-surface depletion of antimony during the growth of GaAsSb and GaAs/GaAsSb nanowires

Energy Technology Data Exchange (ETDEWEB)

Kauko, H.; Helvoort, A. T. J. van, E-mail: a.helvoort@ntnu.no [Department of Physics, Norwegian University of Science and Technology (NTNU), Trondheim (Norway); Fimland, B. O.; Munshi, A. M. [Department of Electronics and Telecommunications, NTNU, Trondheim (Norway); Grieb, T.; Müller, K.; Rosenauer, A. [Institut für Festkörperphysik, Universität Bremen, Bremen (Germany)

2014-10-14

The near-surface reduction of the Sb mole fraction during the growth of GaAsSb nanowires (NWs) and GaAs NWs with GaAsSb inserts has been studied using quantitative high-angle annular dark field scanning transmission electron microscopy (STEM). A model for diffusion of Sb in the hexagonal NWs was developed and employed in combination with the quantitative STEM analysis. GaAsSb NWs grown by Ga-assisted molecular beam epitaxy (MBE) and GaAs/GaAsSb NWs grown by Ga- and Au-assisted MBE were investigated. At the high temperatures employed in the NW growth, As-Sb exchange at and outward diffusion of Sb towards the surface take place, resulting in reduction of the Sb concentration at and near the surface in the GaAsSb NWs and the GaAsSb inserts. In GaAsSb NWs, an increasing near-surface depletion of Sb was observed towards the bottom of the NW due to longer exposure to the As beam flux. In GaAsSb inserts, an increasing change in the Sb concentration profile was observed with increasing post-insert axial GaAs growth time, resulting from a combined effect of radial GaAs overgrowth and diffusion of Sb. The effect of growth temperature on the diffusion of Sb in the GaAsSb inserts was identified. The consequences of these findings for growth optimization and the optoelectronic properties of GaAsSb are discussed.

The Influence of Growth Temperature on Sb Incorporation in InAsSb, and the Temperature-dependent Impact of Bi Surfactants

Science.gov (United States)

2014-01-01

temperature was set to give a beam equivalent pressure ( BEP ) of 4.8x10-7 Torr, as measured in this configuration. 10 4 We have shown in prior...to the value needed to grow lattice matched InAsSb on GaSb without using Bi surfactant at 415 C. The In growth rate was 1 m/hr. The Sb BEP was...1.2x10-7 Torr and the As BEP was 5.71x10-7 Torr. The absolute flux of all the constituents and the V/III ratios were kept constant for both layers of

Ferro electrical properties of GeSbTe thin films; Propiedades ferroelectricas de peliculas delgadas de GeSbTe

Energy Technology Data Exchange (ETDEWEB)

Gervacio A, J. J.; Prokhorov, E.; Espinoza B, F. J., E-mail: jgervacio@qro.cinvestav.m [IPN, Centro de Investigacion y de Estudios Avanzados, Unidad Queretaro, Libramiento Norponiente No. 2000, Juriquilla, 76230 Queretaro (Mexico)

2011-07-01

The aim of this work is to investigate and compare ferro electrical properties of thin GeSbTe films with composition Ge{sub 4}Sb{sub 1}Te{sub 5} (with well defined ferro electrical properties) and Ge{sub 2}Sb{sub 2}Te{sub 5} using impedance, optical reflection, XRD, DSc and Piezo response Force Microscopy techniques. The temperature dependence of the capacitance in both materials shows an abrupt change at the temperature corresponding to ferroelectric-paraelectric transition and the Curie-Weiss dependence. In Ge{sub 2}Sb{sub 2}Te{sub 5} films this transition corresponds to the end from a NaCl-type to a hexagonal transformation. Piezo response Force Microscopy measurements found ferroelectric domains with dimension approximately equal to the dimension of grains. (Author)

Infrared absorption in pseudobinary InSb1-xBix compounds

International Nuclear Information System (INIS)

El-Den, M.B.; Mina, N.K.; Samy, A.M.; El-Mously, M.K.

1988-08-01

The group III-V pseudobinary InSb 1-x Bi x compounds, with x = 0, 0.2 and 0.04, were prepared in thin ribbon forms (30 μ) by splat cooling in air. The optical absorption α(λ) was measured in the wavelength range from 4 to 15 μm. The optical energy gap E opt. , was calculated for the three compounds. A shift of the absorption edge towards longer wavelengths with increasing Bi content was observed. (author). 7 refs, 4 figs

The equilibrium diagram and some properties of alloys Gd5Sb3-Tb5Sb3 system

International Nuclear Information System (INIS)

Azizov, Yu.S.; Abulkhaev, V.D.; Ganiev, I.N.

2001-01-01

The purpose of present work is investigation equilibrium diagram of Gd 5 Sb 3 -Tb 5 Sb 3 system in total range of concentrations. Equilibrium diagram of Gd 5 Sb 3 -Tb 5 Sb 3 system investigated by methods of difference-thermal, roentgen-phase and metallographic analyses. For the first time on the base of difference-thermal, roentgen-phase and metallographic analyses was formed the equilibrium diagram of Gd 5 Sb 3 -Tb 5 Sb 3 system. Was determined the cristal-chemical parameters of solid solutions with general formula Gd x Tb 5 - x Sb 3

AgSbSe{sub 2} and AgSb(S,Se){sub 2} thin films for photovoltaic applications

Energy Technology Data Exchange (ETDEWEB)

Garza, J.G. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Shaji, S. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Facultad de Ingenieria Mecanica y Electrica, CIIDIT - Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico); Rodriguez, A.C.; Das Roy, T.K. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Krishnan, B., E-mail: kbindu_k@yahoo.com [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Facultad de Ingenieria Mecanica y Electrica, CIIDIT - Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico)

2011-10-01

Silver antimony selenide (AgSbSe{sub 2}) thin films were prepared by heating sequentially deposited multilayers of antimony sulphide (Sb{sub 2}S{sub 3}), silver selenide (Ag{sub 2}Se), selenium (Se) and silver (Ag). Sb{sub 2}S{sub 3} thin film was prepared from a chemical bath containing SbCl{sub 3} and Na{sub 2}S{sub 2}O{sub 3}, Ag{sub 2}Se from a solution containing AgNO{sub 3} and Na{sub 2}SeSO{sub 3} and Se thin films from an acidified solution of Na{sub 2}SeSO{sub 3}, at room temperature on glass substrates. Ag thin film was deposited by thermal evaporation. The annealing temperature was 350 deg. C in vacuum (10{sup -3} Torr) for 1 h. X-ray diffraction analysis showed that the thin films formed were polycrystalline AgSbSe{sub 2} or AgSb(S,Se){sub 2} depending on selenium content in the precursor films. Morphology and elemental analysis of these films were done using scanning electron microscopy and energy dispersive X-ray spectroscopy. Optical band gap was evaluated from the UV-visible absorption spectra of these films. Electrical characterizations were done using Hall effect and photocurrent measurements. A photovoltaic structure: glass/ITO/CdS/AgSbSe{sub 2}/Al was formed, in which CdS was deposited by chemical bath deposition. J-V characteristics of this structure showed V{sub oc} = 435 mV and J{sub sc} = 0.08 mA/cm{sup 2} under illumination using a tungsten halogen lamp. Preparation of a photovoltaic structure using AgSbSe{sub 2} as an absorber material by a non-toxic selenization process is achieved.

Peptide-derivatized SB105-A10 dendrimer inhibits the infectivity of R5 and X4 HIV-1 strains in primary PBMCs and cervicovaginal histocultures.

Directory of Open Access Journals (Sweden)

Isabella Bon

Full Text Available Peptide dendrimers are a class of molecules that exhibit a large array of biological effects including antiviral activity. In this report, we analyzed the antiviral activity of the peptide-derivatized SB105-A10 dendrimer, which is a tetra-branched dendrimer synthetized on a lysine core, in activated peripheral blood mononuclear cells (PBMCs that were challenged with reference and wild-type human immunodeficiency virus type 1 (HIV-1 strains. SB105-A10 inhibited infections by HIV-1 X4 and R5 strains, interfering with the early phases of the viral replication cycle. SB105-A10 targets heparan sulfate proteoglycans (HSPGs and, importantly, the surface plasmon resonance (SPR assay revealed that SB105-A10 strongly binds gp41 and gp120, most likely preventing HIV-1 attachment/entry through multiple mechanisms. Interestingly, the antiviral activity of SB105-A10 was also detectable in an organ-like structure of human cervicovaginal tissue, in which SB105-A10 inhibited the HIV-1ada R5 strain infection without altering the tissue viability. These results demonstrated the strong antiviral activity of SB105-A10 and suggest a potential microbicide use of this dendrimer to prevent the heterosexual transmission of HIV-1.

Structural and Electronic Features of Sb-Based Electrode Materials: 121Sb Moessbauer Spectrometry

International Nuclear Information System (INIS)

Ionica, C. M.; Aldon, L.; Lippens, P. E.; Morato, F.; Olivier-Fourcade, J.; Jumas, J.-C.

2004-01-01

Lithium insertion mechanisms in two antimony based compounds: CoSb 3 and CoSb have been studied by means of 121 Sb Moessbauer spectrometry. Structural and electronic modifications induced by insertion of lithium have been characterised for different depths of discharge. In all cases the insertion mechanisms can be described from several steps. In the first step antimony is partially dispersed in the metallic matrix with amorphisation of the electrode material and in a second step we can observe the alloy forming (Li 3 Sb). However this amorphous alloy remains in interaction with the matrix allowing then a good reversibility.

Photoemission study of the skutterudite compounds CoSb sub 3 and RhSb sub 3

CERN Document Server

Ishii, H; Fujimori, A; Nagamoto, Y; Koyanagi, T; Sofo, J O

2002-01-01

We have studied the electronic structure of the skutterudite compounds CoSb sub 3 and Co(Sb sub 0 sub . sub 9 sub 6 Te sub 0 sub . sub 0 sub 4) sub 3 by photoemission spectroscopy. Valence-band spectra revealed that a significant amount Sb 5p states are present near the Fermi level and are hybridized with Co 3d states just below it. The spectra are well reproduced by the band-structure calculation, suggesting that the effect of electron correlations is not important. When Te is substituted for Sb and n-type carriers are doped into CoSb sub 3 , the spectra are shifted to higher binding energies as described by the rigid-band model. From this shift and the free-electron model for the conduction and valence bands, we have estimated the band gap of CoSb sub 3 to be 0.03-0.04 eV, consistent with transport measurements. Photoemission spectra of RhSb sub 3 have also been measured and revealed expected similarities to and differences from those of CoSb sub 3. Unusual temperature dependence has been observed for the s...

Investigations on the electrodeposition behaviors of Bi0.5Sb1.5Te3 thin film from nitric acid baths

International Nuclear Information System (INIS)

Li Feihui; Huang Qinghua; Wang Wei

2009-01-01

The electrochemical reduction process of Bi 3+ , HTeO 2 + , Sb III and their mixtures in nitric acid medium was investigated by means of cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) measurements. The reduction products electrodeposited at various potentials were examined using X-ray diffraction (XRD) and energy dispersive spectroscopy (EDS). The results show that cathodic process in the nitric acid solution containing Bi 3+ , HTeO 2 + and Sb III involves the following reduction reactions in different polarizing potential ranges: In low polarizing potential ranges, Te 0 is formed firstly on the electrode surface through the electrochemical reduction of HTeO 2 + ; with the negative shift of the cathodic polarizing potential, the reduction reaction of Bi 3+ with Te 0 to form Bi 2 Te 3 takes place; when the cathodic polarizing potential is negative enough, Bi 3+ and Sb III react with Te 0 to form Bi 0.5 Sb 1.5 Te 3 . The results indicate that Bi 0.5 Sb 1.5 Te 3 films can be fabricated by controlling the electrodepositing potential in a proper high potential ranges.

Effect of antimony concentration on structural and transport properties of (Bi{sub 1-x}Sb{sub x}){sub 2}Te{sub 3} mixed crystal

Energy Technology Data Exchange (ETDEWEB)

Malik, K.; Das, Diptasikha; Bandyopadhyay, S.; Banerjee, S.; Banerjee, Aritra, E-mail: aritrabanerjee.cu@gmail.com [Department of Physics, University of Calcutta, 92 A P C Road, Kolkata-700009 (India)

2015-06-24

Polycrystalline (Bi{sub 1-x}Sb{sub x}){sub 2}Te{sub 3} (0.60≤x≤0.68) alloys have been synthesized by solid state reaction method. Structural characterizations have been done using X-Ray Diffraction (XRD). Lattice parameter decreases with antimony (Sb) concentration. Sb doping leads to the modification in band structure and Fermi surface geometry. Band gap calculated from thermal variation of resistivity (ρ-T) data, decreases with Sb concentration. Sb concentration dependent power factor near room temperature have been calculated from obtained resistivity and thermopower data. Highest power factor obtained for (Bi{sub 0.40}Sb{sub 0.60}){sub 2}Te{sub 3} alloy.

Growth and electrical characterization of Zn-doped InAs and InAs{sub 1-x}Sb{sub x}

Energy Technology Data Exchange (ETDEWEB)

Venter, A., E-mail: andre.venter@nmmu.ac.z [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth (South Africa); Shamba, P.; Botha, L.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth (South Africa)

2009-06-01

The electrical properties of Zn doped InAs and InAsSb layers grown on semi-insulating GaAs by metal organic vapour phase epitaxy, using dimethyl zinc as the p-type dopant source, have been studied. The influence of dopant flow rate, V/III ratio and substrate orientation on the electrical properties of these InAs and InAs{sub 1-x}Sb{sub x} layers have been studied at a few appropriate growth temperatures. A promising group V source, tertiary butyl arsenic was used as an alternative to arsenic hydride in the case of InAs growth. The electrical properties of the InAs and InAs{sub 1-x}Sb{sub x} epitaxial layers were mainly studied by the Hall effect. However, surface accumulation in these materials results in deceptive Hall results being extracted. A two layer model (assuming the layer to consist of two parallel conducting paths viz. surface and bulk) has therefore been used to extract sensible transport properties. In addition, conventional Hall measurements ignores the high electron to hole mobility ratio in InAs and InAsSb leading to erroneous transport properties.

Microbiological reduction of Sb(V) in anoxic freshwater sediments

Science.gov (United States)

Oremland, Ronald S.; Kulp, Thomas R.; Miller, Laurence G.; Braiotta, Franco; Webb, Samuel M.; Kocar, Benjamin D; Blum, Jodi S.

2014-01-01

Microbiological reduction of millimolar concentrations of Sb(V) to Sb(III) was observed in anoxic sediments from two freshwater settings: (1) a Sb- and As-contaminated mine site (Stibnite Mine) in central Idaho and 2) an uncontaminated suburban lake (Searsville Lake) in the San Francisco Bay Area. Rates of Sb(V) reduction in anoxic sediment microcosms and enrichment cultures were enhanced by amendment with lactate or acetate as electron donors but not by H2, and no reduction occurred in sterilized controls. Addition of 2-14C-acetate to Stibnite Mine microcosms resulted in the production of 14CO2 coupled to Sb(V) reduction, suggesting that this process proceeds by a dissimilatory respiratory pathway in those sediments. Antimony(V) reduction in Searsville Lake sediments was not coupled to acetate mineralization and may be associated with Sb-resistance. The microcosms and enrichment cultures also reduced sulfate, and the precipitation of insoluble Sb(III)-sulfide complexes was a major sink for reduced Sb. The reduction of Sb(V) by Stibnite Mine sediments was inhibited by As(V), suggesting that As(V) is a preferred electron acceptor for the indigenous community. These findings indicate a novel pathway for anaerobic microbiological respiration and suggest that communities capable of reducing high concentrations of Sb(V) commonly occur naturally in the environment.

Observation of chemical separation of In{sub 3}Sb{sub 1}Te{sub 2} thin film during phase transition

Energy Technology Data Exchange (ETDEWEB)

Lee, Y.M.; Baik, J.; Shin, H.-J. [Beamline Division, Pohang Accelerator Laboratory, POSTECH, Pohang 790-784 (Korea, Republic of); Kim, Y.S. [Department of Physics and Energy Harvest-Storage Research Center (EHSRC), University of Ulsan, Ulsan 680-749 (Korea, Republic of); Yoon, S.G., E-mail: sgyoon@cnu.ac.kr [Brain Korea 21 Project (BK21) and Department of Materials Engineering, Chungnam University, Daejeon 305-764 (Korea, Republic of); Jung, M.-C., E-mail: mcjung@oist.jp [Energy Materials and Surface Sciences Unit, Okinawa Institute of Science and Technology Graduate University, Okinawa 904-0495 (Japan); Qi, Y.B. [Energy Materials and Surface Sciences Unit, Okinawa Institute of Science and Technology Graduate University, Okinawa 904-0495 (Japan)

2014-02-15

We investigated the chemical states of In{sub 3}Sb{sub 1}Te{sub 2} (IST) thin film using high-resolution X-ray photoelectron spectroscopy (HRXPS) with the synchrotron radiation during in-situ annealing in ultra-high vacuum. To obtain the oxygen-free amorphous IST (a-IST), we performed the mild Ne{sup +} ion sputtering. And also we confirmed the relative a-IST stoichiometry to be 54%:17%:29% based on HRXPS data. At the first and second phase transition temperatures of 350 and 400 °C, we observed the dramatic changes of chemical states from a-IST to InSb and the mixture of crystalline-IST and InTe, respectively. There was a depletion of Sb atoms on the surface after annealing at 750 °C. We assume that Sb atom is a key for the phase transition in IST. However, chemical state of the Sb in IST is unstable during the phase transition and it will be caused with the non-reversible process by this structural instability.

Residual carrier density in GaSb grown on Si substrates

International Nuclear Information System (INIS)

Akahane, Kouichi; Yamamoto, Naokatsu; Gozu, Shin-ichiro; Ueta, Akio; Ohtani, Naoki

2006-01-01

The relationships between the densities of residual carriers and those of dislocation in GaSb films grown on Si substrates were investigated. Dislocation density was evaluated by cross-sectional transmission electron microscopy (TEM). The TEM images indicated that the dislocation density after a 5-μm-thick GaSb film was grown was below 1 x 10 8 /cm 2 although the density near the interface between the Si substrate and the GaSb film was about 3 x 10 9 /cm 2 . Forming a dislocation loop by growing a thick GaSb layer may decrease the dislocation density. The density and mobility of the residual carrier were investigated by Hall measurement using the van der Pauw method. The residual carriers in GaSb grown on Si substrates were holes, and their densities decreased significantly from 4.2 x 10 18 to 1.4 x 10 17 /cm 3 as GaSb thickness was increased from 500 to 5500 nm

Investigations in MnAs{sub 1−x}Sb{sub x}: Experimental validation of a new magnetocaloric composite

Energy Technology Data Exchange (ETDEWEB)

Campos, A. de, E-mail: acampos@icte.uftm.edu.br [Instituto de Ciências Tecnológicas e Exatas, Universidade Federal do Triângulo Mineiro (UFTM), 38066-200 Uberaba (Brazil); Luz, M.S. da; Campos, Adriana de [Instituto de Ciências Tecnológicas e Exatas, Universidade Federal do Triângulo Mineiro (UFTM), 38066-200 Uberaba (Brazil); Coelho, A.A.; Cardoso, L.P. [Instituto deFísica Gleb Wataghin, Universidade Estadual de Campinas (UNICAMP), 13083-970 Campinas (Brazil); Santos, A.O. dos [Centro de Ciências Sociais, Saúde e Tecnologia, Universidade Federal do Maranhão – (UFMA), 65900-000 Imperatriz, MA (Brazil); Gama, S. [Departamento de Ciências Exatas e da Terra, Universidade Federal de São Paulo (UNIFESP), Diadema, 09971-270 SP (Brazil)

2015-01-15

An overview of the magnetocaloric properties of the MnAs{sub 1−x}Sb{sub x} is presented. The temperature dependence of the isothermal magnetic entropy, ΔS{sub mag}, and the refrigerant capacity, RC, have been investigated theoretically and experimentally in a composite based on second order MnAs{sub 1−x}Sb{sub x} phases. This work demonstrates the outstanding agreement between the experimental results and the continuous curves predicted by numerical calculations, indicating that this approach can be used to design magnetic refrigerant materials with enhanced magnetocaloric response in magnetic refrigerator performing an Ericsson cycle near room temperature. - Highlights: • This is the first report showing the magnetocaloric properties of the MnAs{sub 1−x}Sb{sub x} composite. • This work demonstrates a good agreement between experimental and the predicted by numerical calculations. The results indicating that this approach can be used to design magnetic refrigerant materials.

InAs/GaSb/AlSb composite quantum well structure preparation with help of reflectance anisotropy spectroscopy

Czech Academy of Sciences Publication Activity Database

Hospodková, Alice; Hulicius, Eduard; Pangrác, Jiří; Dominec, Filip; Mikhailova, M. P.; Veinger, A.I.; Kochman, I.V.

2017-01-01

Roč. 464, Apr (2017), s. 206-210 ISSN 0022-0248 R&D Projects: GA MŠk LM2015087; GA MŠk LO1603 Institutional support: RVO:68378271 Keywords : low dimensional structures * MOVPE * InAs/GaSb composite quantum wells * AlSb Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 1.751, year: 2016

TestNG beginner's guide

CERN Document Server

Menon, Varun

2013-01-01

This book is written in a friendly, beginner's guide style with plenty of step-by-step instructions with appropriate examples.This book is great for developers and testers who are new to TestNg and want to learn how to use TestNG for writing their application as well as functional tests. This book assumes that you have experience in Java and OOPs concepts and have worked with certain IDE.

Thermoelectric properties of c-GeSb{sub 0.75}Te{sub 0.5} to h-GeSbTe{sub 0.5} thin films through annealing treatment effects

Energy Technology Data Exchange (ETDEWEB)

Vora-ud, Athorn, E-mail: athornvora-ud@snru.ac.th [Program of Physics, Faculty of Science and Technology, Sakon Nakhon Rajabhat University, Mueang District, Sakon Nakhon 47000 (Thailand); Thermoelectrics Research Center, Research and Development Institution, Sakon Nakhon Rajabhat University, Mueang District, Sakon Nakhon 47000 (Thailand); Horprathum, Mati, E-mail: mati.horprathum@nectec.or.th [National Electronics and Computer Technology Center, National Science and Technology Development Agency, Pathumthani 12120 (Thailand); Eiamchai, Pitak [National Electronics and Computer Technology Center, National Science and Technology Development Agency, Pathumthani 12120 (Thailand); Muthitamongkol, Pennapa; Chayasombat, Bralee; Thanachayanont, Chanchana [National Metal and Materials Technology Center, National Science and Technology Development Agency, Pathumthani 12120 (Thailand); Pankiew, Apirak [National Electronics and Computer Technology Center, National Science and Technology Development Agency, Pathumthani 12120 (Thailand); Klamchuen, Annop [National Nanotechnology Center, National Science and Technology Development Agency, Pathumthani 12120 (Thailand); Naenkieng, Daengdech; Plirdpring, Theerayuth; Harnwunggmoung, Adul [Thermoelectric and Nanotechnology Research Center, Faculty of Science and Technology, Rajamangala University of Technology Suvarnabhumi, Huntra Phranakhon, Si Ayutthaya 13000 (Thailand); Charoenphakdee, Anek [NANO-Thermoelectrics Research Center, Division of Applied Physics, Faculty of Sciences and Liberal Arts, Rajamangala University of Technology Isan, Mueng Nakorn Ratchasima 30000 Thailand (Thailand); Somkhunthot, Weerasak [Program of Physics, Faculty of Science and Technology, Loei Rajabhat University, Muang District, Loei 42000 (Thailand); and others

2015-11-15

Germanium–Antimony–Tellurium (Ge–Sb–Te) thin films were deposited on silicon wafers with 1-μm silicon dioxide (SiO{sub 2}/Si) by pulsed dc magnetron sputtering from a 99.99% GeSbTe target of 1:1:1 ratio at ambient temperature. The samples were annealed at 573, 623, 673, and 723 K for 3600 s in a vacuum state. The effects of the annealing treatment on phase identification, atomic composition, morphology and film thickness, carrier concentration, mobility, and Seebeck coefficient of the Ge–Sb–Te samples have been investigated by grazing-incidence X-ray diffraction, auger electron spectroscopy, field-emission scanning electron microscopy, Hall-effect measurements, and steady state method, respectively. The results demonstrated that the as-deposited Ge–Sb–Te sample was amorphous. Atomic composition of as-deposited and annealed films at 573 K and 623 K were GeSb{sub 0.75}Te{sub 0.5} while annealed films at 673 K and 723 K were GeSbTe{sub 0.5} due to Sb-rich GeSb{sub 0.75}Te{sub 0.5}. The samples annealed at 573 K and 623 K showed the crystal phases of cubic structure (c-GeSb{sub 0.75}Te{sub 0.5}) into hexagonal structure (h-GeSbTe{sub 0.5}) after annealing at 673 K and 723 K. The study demonstrated the insulating condition from the as-deposited GeSbTe film, and the changes towards the thermoelectric properties from the annealing treatments. The GeSbTe films annealed at 673 K yielded excellent thermoelectric properties with the electrical resistivity, Seebeck coefficient, and power factor at approximately 1.45 × 10{sup −5} Ωm, 71.07 μV K{sup −1}, and 3.48 × 10{sup −4} W m{sup −1} K{sup −2}, respectively. - Highlights: • GeSbTe thin films were successfully sputtered for thermoelectric properties. • GeSbTe films were examined among physical, electrical and thermoelectric properties. • Thermoelectric properties were discussed based on composition of the films.

Development of half metallicity within mixed magnetic phase of Cu1‑x Co x MnSb alloy

Science.gov (United States)

Bandyopadhyay, Abhisek; Neogi, Swarup Kumar; Paul, Atanu; Meneghini, Carlo; Bandyopadhyay, Sudipta; Dasgupta, Indra; Ray, Sugata

2018-05-01

Cubic half-Heusler Cu1‑x Co x MnSb () compounds have been investigated both experimentally and theoretically for their magnetic, transport and electronic properties in search of possible half metallic antiferromagnetism. The systems (Cu,Co)MnSb are of particular interest as the end member alloys CuMnSb and CoMnSb are semi metallic (SM) antiferromagnetic (AFM) and half metallic (HM) ferromagnetic (FM), respectively. Clearly, Co-doping at the Cu-site of CuMnSb introduces changes in the carrier concentration at the Fermi level that may lead to half metallic ground state but there remains a persistent controversy whether the AFM to FM transition occurs simultaneously. Our experimental results reveal that the AFM to FM magnetic transition occurs through a percolation mechanism where Co-substitution gradually suppresses the AFM phase and forces FM polarization around every dopant cobalt. As a result a mixed magnetic phase is realized within this composition range while a nearly HM band structure is developed already at the 10% Co-doping. Absence of T 2 dependence in the resistivity variation at low T-region serves as an indirect proof of opening up an energy gap at the Fermi surface in one of the spin channels. This is further corroborated by the ab initio electronic structure calculations that suggests that a nearly ferromagnetic half-metallic ground state is stabilized by Sb-p holes produced upon Co doping.

Processing and characterization of new oxy-sulfo-telluride glasses in the Ge-Sb-Te-S-O system

International Nuclear Information System (INIS)

Smith, C.; Jackson, J.; Petit, L.; Rivero-Baleine, C.; Richardson, K.

2010-01-01

New oxy-sulfo-telluride glasses have been prepared in the Ge-Sb-Te-S-O system employing a two-step melting process which involves the processing of a chalcogenide glass (ChG) and subsequent melting with TeO 2 or Sb 2 O 3 . The progressive incorporation of O at the expense of S was found to increase the density and the glass transition temperature and to decrease the molar volume of the investigated oxy-sulfo-telluride glasses. We also observed a shift of the vis-NIR cut-off wavelength to longer wavelength probably due to changes in Sb coordination within the glass matrix and overall matrix polarizability. Using Raman spectroscopy, correlations have been shown between the formation of Ge- and Sb-based oxysulfide structural units and the S/O ratio. Lastly, two glasses with similar composition (Ge 20 Sb 6 S 64 Te 3 O 7 ) processed by melting the Ge 23 Sb 7 S 70 glass with TeO 2 or the Ge 23 Sb 2 S 72 Te 4 glass with Sb 2 O 3 were found to have slightly different physical, thermal, optical and structural properties. These changes are thought to result mainly from the higher moisture content and sensitivity of the TeO 2 starting materials as compared to that of the Sb 2 O 3 . - Graphical abstract: In this paper, we discuss our most recent findings on the processing and characterization of new ChG glasses prepared with small levels of Te, melted either with TeO 2 or Sb 2 O 3 powders. We explain how these new oxy-sulfo-telluride glasses are prepared and we correlate the physical, thermal and optical properties of the investigated glasses to the structure changes induced by the addition of oxygen in the Ge-Sb-S-Te glass network.

Bismuth-induced restructuring of the GaSb(110) surface

DEFF Research Database (Denmark)

Gemmeren, T. van; Lottermoser, L.; Falkenberg, G.

1998-01-01

The structure of the GaSb(110)(1 x 2)-Bi reconstruction has been solved using surface x-ray diffraction, scanning tunneling microscopy, and photoelectron spectroscopy. The ideal GaSb(110) surface is terminated with zigzag chains of anions and cations running in the [1 (1) over bar 0] direction...

N-doped Sb2Te phase change materials for higher data retention

International Nuclear Information System (INIS)

Zhu Min; Wu Liangcai; Rao Feng; Song Zhitang; Li Xuelai; Peng Cheng; Zhou Xilin; Ren Kun; Yao Dongning; Feng Songlin

2011-01-01

Highlights: → Crystallization temperatures of the N-doped Sb 2 Te films increase remarkably. → The E a of N-doped Sb 2 Te films increase first, and then decrease. → The best 10-years lifetime at temperature up to 141 deg. C is found in Sb 2 TeN1 films. → The power consumption of PCRAM test cell based on Sb 2 TeN1 film is low. - Abstract: Crystallization temperatures of the Sb 2 Te films increase remarkably from 139.4 deg. C to 223.0 deg. C as the N 2 flow rates increasing from 0 sccm to 1.5 sccm. Electrical conduction activation energies for amorphous and crystalline states increase by doping nitrogen. A small amount of nitrogen atoms can locate at interstitial sites in the hexagonal structure, generating a strain field, and improving the thermal stability of amorphous state. The best 10-years lifetime at temperature up to 141 deg. C is found in Sb 2 TeN 1 films. Doping excessively high nitrogen in Sb 2 Te film will form nitride and make Te separate out. As a result, the activation energy for crystallization decreases instead, accompanying with the deterioration of thermal stability. The power consumption of PCRAM test cell based on Sb 2 TeN 1 film is ten times lower than that of PCRAM device using Ge 2 Sb 2 Te 5 films.

Osmoregulatory effects of hypophysectomy and homologous prolactin replacement in hybrid striped bass

DEFF Research Database (Denmark)

Jackson, Leslie F; McCormick, Stephen D; Madsen, Steffen S

2005-01-01

The effects of ovine prolactin (oPRL) and striped bass prolactin (sbPRL; Morone saxatilis) on plasma osmolality, electrolyte balance, and gill Na+,K+-ATPase activity were investigated in hypophysectomized (Hx), freshwater (FW)-acclimated, hybrid striped bass (M. saxatilis x Morone chrysops...... or 100 ng/g), or hormone vehicle (0.9% NaCl) at 48-h intervals (days 0, 2, 4, and 6) in FW and then sampled for blood plasma 24 h after the fourth injection (day 7). In Hx fish, oPRL (5 and 20 microg/g) and sbPRL (10 and 100 ng/g) were effective in maintaining plasma osmolality and levels of Na+, Cl...... balance in FW-adapted hybrid striped bass, and that this may involve downregulation of branchial Na+,K+-ATPase activity....

Microwave radiation absorption and Shubnikov-de Haas oscillations in semimetal InAs/GaSb/AlSb composite quantum wells

Czech Academy of Sciences Publication Activity Database

Mikhailova, M. P.; Veinger, A.I.; Kochman, I.V.; Semenikhin, P.V.; Kalinina, K.V.; Parfeniev, R.V.; Berezovets, V.A.; Safonchik, M.O.; Hospodková, Alice; Pangrác, Jiří; Zíková, Markéta; Hulicius, Eduard

2016-01-01

Roč. 10, č. 4 (2016), 1-8, č. článku 046013. ISSN 1934-2608 R&D Projects: GA ČR GA13-15286S; GA MŠk LO1603 Institutional support: RVO:68378271 Keywords : Shubnikov-de Haas oscillations * microwave absorption * electron-paramagnetic resonance * composite quantum wells * InAs/GaSb/AlSb * MOVPE Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.325, year: 2016

Observation of coherent optical phonons excited by femtosecond laser radiation in Sb films by ultrafast electron diffraction method

Energy Technology Data Exchange (ETDEWEB)

Mironov, B. N.; Kompanets, V. O.; Aseev, S. A., E-mail: isanfemto@yandex.ru [Russian Academy of Sciences, Institute of Spectroscopy (Russian Federation); Ischenko, A. A. [Moscow Technological University, Institute of High Chemical Technologies (Russian Federation); Kochikov, I. V. [Moscow State University (Russian Federation); Misochko, O. V. [Russian Academy of Sciences, Institute of Solid State Physics (Russian Federation); Chekalin, S. V.; Ryabov, E. A. [Russian Academy of Sciences, Institute of Spectroscopy (Russian Federation)

2017-03-15

The generation of coherent optical phonons in a polycrystalline antimony film sample has been investigated using femtosecond electron diffraction method. Phonon vibrations have been induced in the Sb sample by the main harmonic of a femtosecond Ti:Sa laser (λ = 800 nm) and probed by a pulsed ultrashort photoelectron beam synchronized with the pump laser. The diffraction patterns recorded at different times relative to the pump laser pulse display oscillations of electron diffraction intensity corresponding to the frequencies of vibrations of optical phonons: totally symmetric (A{sub 1g}) and twofold degenerate (E{sub g}) phonon modes. The frequencies that correspond to combinations of these phonon modes in the Sb sample have also been experimentally observed.

A new solid solution compound with the Sr{sub 21}Mn{sub 4}Sb{sub 18} structure type. Sr{sub 13}Eu{sub 8}Cd{sub 3}Mn{sub 1}Sb{sub 18}

Energy Technology Data Exchange (ETDEWEB)

Kunz Wille, Elizabeth L.; Cooley, Joya A.; Fettinger, James C.; Kazem, Nasrin; Kauzlarich, Susan M. [California Univ., Davis, CA (United States). Dept. of Chemistry

2017-09-01

The title compound with the nominal formula, Sr{sub 13}Eu{sub 8}Cd{sub 3}Mn{sub 1}Sb{sub 18}, was synthesized by Sn-flux. Structure refinement was based on single-crystal X-ray diffractometer data. Employing the exact composition, the formula is Sr{sub 13.23}Eu{sub 7.77}Cd{sub 3.12}Mn{sub 0.88}Sb{sub 18} for the solid solution Sr{sub 21-x}Eu{sub x}Cd{sub 4-y}Mn{sub y}Sb{sub 18}. This phase adopts the Sr{sub 21}Mn{sub 4}Sb{sub 18} type structure with site preferences for both Eu and Cd. The structure crystallizes in the monoclinic system in space group C2/m and Z=4: a=18.1522(11), b=17.3096(10), c=17.7691(10) Aa, β=91.9638(8) , 6632 F{sup 2} values, 216 variables, R1=0.0254 and wR2=0.0563. Site selectivity of the elements in this new compound will be discussed in relationship with the Sr{sub 21}Mn{sub 4}Sb{sub 18} type structure and other related structure types. Temperature dependent magnetic susceptibility data reveal Curie-Weiss paramagnetism with an experimental moment of 19.3 μ{sub B}/f.u. and a Weiss constant of 0.4 K. Magnetic ordering is seen at low temperatures, with a transition temperature of 3.5 K.

Thermoelectric and mechanical properties of spark plasma sintered Cu{sub 3}SbSe{sub 3} and Cu{sub 3}SbSe{sub 4}: Promising thermoelectric materials

Energy Technology Data Exchange (ETDEWEB)

Tyagi, Kriti; Gahtori, Bhasker; Bathula, Sivaiah; Toutam, Vijaykumar; Sharma, Sakshi; Singh, Niraj Kumar; Dhar, Ajay, E-mail: adhar@nplindia.org [CSIR-Network of Institutes for Solar Energy, Materials Physics and Engineering, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012 (India)

2014-12-29

We report the synthesis of thermoelectric compounds, Cu{sub 3}SbSe{sub 3} and Cu{sub 3}SbSe{sub 4}, employing the conventional fusion method followed by spark plasma sintering. Their thermoelectric properties indicated that despite its higher thermal conductivity, Cu{sub 3}SbSe{sub 4} exhibited a much larger value of thermoelectric figure-of-merit as compared to Cu{sub 3}SbSe{sub 3}, which is primarily due to its higher electrical conductivity. The thermoelectric compatibility factor of Cu{sub 3}SbSe{sub 4} was found to be ∼1.2 as compared to 0.2 V{sup −1} for Cu{sub 3}SbSe{sub 3} at 550 K. The results of the mechanical properties of these two compounds indicated that their microhardness and fracture toughness values were far superior to the other competing state-of-the-art thermoelectric materials.

First-principles study of electronic structure of CuSbS{sub 2} and CuSbSe{sub 2} photovoltaic semiconductors

Energy Technology Data Exchange (ETDEWEB)

Maeda, T., E-mail: tmaeda@ad.ryukoku.ac.jp; Wada, T.

2015-05-01

We studied the features of CuSbS{sub 2} (CAS) and CuSbSe{sub 2} (CASe), two proposed photovoltaic compounds, and clarified their electronic structures by first-principles calculations and compared them to the chalcopyrite-type CuInSe{sub 2} results. For both CAS and CASe, the calculated enthalpies of formation of the chalcostibite phases were considerably lower than those of the chalcopyrite phases. Therefore, we considered that the chalcostibite phase is more stable for CAS and CASe. In their band structure calculated with the HSE06 hybrid functional, the valence band maxima of CAS and CASe were located at the Γ-point, and the conduction band minima were located at the R-point. Their second lowest conduction band was located at the Γ-point, whose energy level nearly equaled the R-point. For CAS (CASe), the partial density of the states shows the character of the Cu 3d and S 3p (Se 4p) orbitals at the top of the valence bands and the Sb 5p and S 3p (Se 4p) orbitals at the bottom of the conduction bands. The conduction bands of CAS and CASe have a p-orbital character (Sb 5p) that differs from the s-orbital character (In 5s) of CuInSe{sub 2}. It is for the reason that CAS and CASe do not have a chalcopyrite structure but a chalcostibite-type structure. The calculated absorption coefficient of CuSbS{sub 2} (10{sup 4}-10{sup 5} cm{sup −1}) is comparable to that of CuInSe{sub 2}. - Highlights: • We studied the features of CuSbS{sub 2} and CuSbSe{sub 2}, newly proposed photovoltaic compounds. • Chalcostibite phase is more stable in CuSbS{sub 2} and CuSbSe{sub 2}. • Band structures of CuSbS{sub 2} and CuSbS{sub 2} were calculated with HSE06 hybrid functional. • Absorption coefficient of chalcostibite-type CuSbS{sub 2} is comparable to that of CuInSe{sub 2}.

Effect of Sb{sub 2}O{sub 3} on the electrical properties of Ba{sub 0.9}Ca{sub 0.1}Zr{sub 0.1}Ti{sub 0.9}O{sub 3} ceramics fabricated using nanocrystals seed

Energy Technology Data Exchange (ETDEWEB)

Parjansri, P. [Rajamangala University of Technology Krungthep, Physics Division, Faculty of Science and Technology, Bangkok (Thailand); Intatha, U. [Mae Fah Luang University, School of Science, Chiang Rai (Thailand); Guo, R.; Bhalla, A.S. [University of Texas at San Antonio, Department of Electrical and Computer Engineering, Faculty of Engineering, San Antonio, TX (United States); Eitssayeam, S. [Chiang Mai University, Department of Physics and Materials Science, Faculty of Science, Chiang Mai (Thailand); Chiang Mai University, Materials Science Research Center, Faculty of Science, Chiang Mai (Thailand)

2016-09-15

This work was to investigate the effects of antimony oxide (Sb{sub 2}O{sub 3}) on the electrical properties of Ba{sub 0.9}Ca{sub 0.1}Zr{sub 0.1}Ti{sub 0.9}O{sub 3} (BCZT) ceramics and was prepared by adding 1 mol% of BCZT nanocrystals. The seed is nanocrystals of BCZT which was synthesized by the molten salt method. The ceramics powders were prepared by the mixed oxide method using BaCO{sub 3}, CaCO{sub 3}, ZrO{sub 2}, TiO{sub 2} as starting materials, and the BCZT seed was added as nanocrystal for induce phase transition. They were doped with x mol% Sb{sub 2}O{sub 3} (x = 0.0-0.5). Results indicated that all samples show pure perovskite phase. The Sb{sub 2}O{sub 3} enhanced the electrical properties of the ceramic systems. Excellent values of a dielectric constant (ε {sub r}) at room temperature (T{sub r}) were 4086 with sample of x = 0.5, and at Curie temperature (T{sub c}) was 15,485 for samples with x = 0.1. The highest remnant polarization (P{sub r}), piezoelectric charge coefficient (d{sub 33}), piezoelectric voltage coefficient (g{sub 33}), electromechanical coefficient for planar mode (k{sub p}) and thickness mode (k{sub t}) values were 6.3 μC/cm{sup 2}, 346 pC/N, 15.6 x 10{sup -3} Vm/N, 42 and 41 %, respectively, which were obtained for the sample of x = 0.2 mol% Sb. (orig.)

Low temperature photoluminescence and photoacoustic characterization of Zn-doped InxGa1-xAsySb1-y epitaxial layers for photovoltaic applications

International Nuclear Information System (INIS)

Gomez-Herrera, M.L.; Herrera-Perez, J.L.; Rodriguez-Fragoso, P.; Riech, I.; Mendoza-Alvarez, J.G.

2008-01-01

In this paper we present results on the characterization of Zn-doped InGaAsSb epitaxial layers to be used in the development of stacked solar cells. Using the liquid phase epitaxy technique we have grown p-type InGaAsSb layers, using Zn as the dopant, and n-type Te-doped GaSb wafers as substrates. A series of Zn-doped InGaAsSb samples were prepared by changing the amount of Zn in the melt in the range: 0.1-0.9 mg to obtain different p-type doping levels, and consequently, different p-n region characteristics. Low temperature photoluminescence spectra (PL) were measured at 15 K using at various excitation powers in the range 80-160 mW. PL spectra show the presence of an exciton-related band emission around 0.642 eV and a band at 0.633 eV which we have related to radiative emission involving Zn-acceptors. Using the photoacoustic technique we measured the interface recombination velocities related to the interface crystalline quality, showing that the layer-substrate interface quality degrades as the Zn concentration in the layers increases

Evaluation of Glass Density to Support the Estimation of Fissile Mass Loadings from Iron Concentrations in SB6 Glasses

Energy Technology Data Exchange (ETDEWEB)

Edwards, T.; Peeler, D.

2010-12-15

The Department of Energy - Savannah River (DOE-SR) previously provided direction to Savannah River Remediation (SRR) to maintain fissile concentration in glass below 897 g/m{sup 3}. In support of the guidance, the Savannah River National Laboratory (SRNL) provided a technical basis and a supporting Microsoft{reg_sign} Excel{reg_sign} spreadsheet for the evaluation of fissile loading in Sludge Batch 5 glass based on the Fe concentration in glass as determined by the measurements from the Slurry Mix Evaporator (SME) acceptability analysis. SRR has since requested that SRNL provide the necessary information to allow SRR to update the Excel spreadsheet so that it may be used to maintain fissile concentration in glass below 897 g/m{sup 3} during the processing of Sludge Batch 6 (SB6). One of the primary inputs into the fissile loading spreadsheet includes a bounding density for SB6-based glasses. Based on the measured density data of select SB6 variability study glasses, SRNL recommends that SRR utilize the 99/99 Upper Tolerance Limit (UTL) density value at 38% WL (2.823 g/cm{sup 3}) as a bounding density for SB6 glasses to assess the fissile concentration in this glass system. That is, the 2.823 g/cm{sup 3} is recommended as a key (and fixed) input into the fissile concentration spreadsheet for SB6 processing. It should be noted that no changes are needed to the underlying structure of the Excel based spreadsheet to support fissile assessments for SB6. However, SRR should update the other key inputs to the spreadsheet that are based on fissile and Fe concentrations reported from the SB6 Waste Acceptance Product Specification (WAPS) sample. The purpose of this technical report is to present the density measurements that were determined for the SB6 variability study glasses and to conduct a statistical evaluation of these measurements to provide a bounding density value that may be used as input to the Excel{reg_sign} spreadsheet to be employed by SRR to maintain the

Study of conformational changes and protein aggregation of bovine serum albumin in presence of Sb(III) and Sb(V).

Science.gov (United States)

Verdugo, Marcelo; Ruiz Encinar, Jorge; Costa-Fernández, José Manuel; Menendez-Miranda, Mario; Bouzas-Ramos, Diego; Bravo, Manuel; Quiroz, Waldo

2017-01-01

Antimony is a metalloid that affects biological functions in humans due to a mechanism still not understood. There is no doubt that the toxicity and physicochemical properties of Sb are strongly related with its chemical state. In this paper, the interaction between Sb(III) and Sb(V) with bovine serum albumin (BSA) was investigated in vitro by fluorescence spectroscopy, and circular dichroism (CD) under simulated physiological conditions. Moreover, the coupling of the separation technique, asymmetric flow field-flow fractionation, with elemental mass spectrometry to understand the interaction of Sb(V) and Sb(III) with the BSA was also used. Our results showed a different behaviour of Sb(III) vs. Sb(V) regarding their effects on the interaction with the BSA. The effects in terms of protein aggregates and conformational changes were higher in the presence of Sb(III) compared to Sb(V) which may explain the differences in toxicity between both Sb species in vivo. Obtained results demonstrated the protective effect of GSH that modifies the degree of interaction between the Sb species with BSA. Interestingly, in our experiments it was possible to detect an interaction between BSA and Sb species, which may be related with the presence of labile complex between the Sb and a protein for the first time.

Molecular beam epitaxy growth of InSb1−xBix thin films

DEFF Research Database (Denmark)

Song, Yuxin; Wang, Shumin; Saha Roy, Ivy

2013-01-01

Molecular beam epitaxy growth for InSb1−xBix thin films on (100) GaAs substrates is reported. Successful Bi incorporation for 2% is achieved, and up to 70% of the incorporated Bi atoms are at substitutional sites. The effects of growth parameters on Bi incorporation and surface morphology are stu...

Phytoremediation of Sb, As, Cu, and Zn from contaminated water by the aquatic macrophyte eleocharis acicularis

Energy Technology Data Exchange (ETDEWEB)

Sakakibara, Masayuki [Graduate School of Science and Engineering, Ehime University, Ehime (Japan); Sano, Sakae [Faculty of Education, Ehime University, Ehime (Japan); Ha, Nguyen Thi Hoang

2009-09-15

Sb, As, Cu, and Zn toxicity and contamination have become a growing concern in recent years. Phytoremediation, a plant based and cost effective technology, may be an effective approach in the cleanup of water contaminated by these metals. In this study, the aquatic macrophyte Eleocharis acicularis was used in laboratory and field experiments to assess its capability to accumulate Sb, As, Cu, and Zn, and thereby investigate its potential application in phytoremediation. The results showed that E. acicularis adapted well to water contaminated by these metals. The removal rates of Sb, As, Cu, and Zn in the laboratory experiment were 3.04, 2.75, 0.417, and 1.49 {mu}g/L/day, respectively. The highest concentrations of these metals accumulated in E. acicularis after 10 days of the laboratory experiment were 6.29, 6.44, 20.5, and 73.5 mg/kg dry weight, respectively. Only 8% of As, 12% of Sb, 87% of Cu and 93% of Zn removed from the water were used by E. acicularis. The highest concentrations of Sb, As, Cu, and Zn accumulated in E. acicularis after 10 wk of the field experiment were 76.0, 22.4, 33.9, and 266 mg/kg dry weight, respectively. The results indicate that E. acicularis has the ability to accumulate Sb, As, Cu, and Zn from contaminated water. (Abstract Copyright [2009], Wiley Periodicals, Inc.)

Structural characterization of half-metallic Heusler compound NiMnSb

Energy Technology Data Exchange (ETDEWEB)

Nowicki, L. E-mail: lech.nowicki@fuw.edu.pl; Abdul-Kader, A.M.; Bach, P.; Schmidt, G.; Molenkamp, L.W.; Turos, A.; Karczewski, G

2004-06-01

High resolution X-ray diffraction (HRXRD) and Rutherford backscattering/channeling (RBS/c) techniques were used to characterize layers of NiMnSb grown by molecular beam epitaxy (MBE) on InP with a In{sub x}Ga{sub 1-x}As buffer. Angular scans in the channeling mode reveal that the crystal structure of NiMnSb is tetragonally deformed with c/a=1.010{+-}0.002, in agreement with HRXRD data. Although HRXRD demonstrates the good quality of the pseudomorphic NiMnSb layers the channeling studies show that about 20% of atoms in the layers do not occupy lattice sites in the [0 0 1] rows of NiMnSb. The possible mechanisms responsible for the observed disorder are discussed.

Hans Küng: "Projekt Weltethos "

OpenAIRE

Altmanninger, Maria

2002-01-01

Bei dieser Arbeit werde ich mich vor Allem auf zwei Werke beziehen: Küng,Hans:Projekt Weltethos.Piper.München 1990. Küng,Hans;Kuschel,Karl-Josef (Hg.):Weltfrieden durch Religionsfrieden.Die unter Punkt Acht aufgeführte Stellungnahme wurde ausschließlich von mir verfasst.

Crystal structure and bonding characteristics of In-doped β-Zn4Sb3

International Nuclear Information System (INIS)

Tang, Dingguo; Zhao, Wenyu; Cheng, Sudan; Wei, Ping; Yu, Jian; Zhang, Qingjie

2012-01-01

The effects of indium impurity on the crystal structure and bonding characteristics of In-doped β-Zn 4 Sb 3 were investigated by powder X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The XRD Rietveld refinement indicates that the indium impurity preferentially substitutes one of Sb atoms in Sb–Sb dimer at the 12c Sb(2) site and simultaneously leads to the increase of Zn occupancy. The observations of binding energy shift and a new valence state in Sb 3d core-level XPS spectra can be attributed to the charge transfer from In and Zn to Sb. As a result, more electropositive Zn atoms are needed to maintain the charge balance. The reduction of the lattice thermal conductivity is ascribed to the formation of the asymmetric Sb–In bond, resulting in much low lattice thermal conductivity of 0.49 W −1 K −1 of Zn 4 Sb 2.96 In 0.04 . - Graphical abstract: The indium impurity substitutes one of Sb atoms in Sb–Sb dimer, resulting the charge transfer from In to Sb, which leads to the binding energy of Sb 3d core level XPS spectra shift to low value. Highlights: ► The indium impurity preferentially substitutes one of Sb atoms in Sb–Sb dimer at the 12c Sb(2) site. ► The occupancy of Zn increases by the In substitution for Sb, whereas that of Sb keeps constant. ► The binding energy of Sb 3d shifts to low value. ► The charge transfer occurs from In and Zn to Sb.

A Summary of Rheology Data For SB3 and SB2/3 Blend Simulant Savannah River Site Wastes

International Nuclear Information System (INIS)

KOOPMAN, DAVIDC.

2004-01-01

The purpose of this study was to document the rheological measurements made for Sludge Batch 3 (SB3) and the blend of SB3 with Sludge Batch 2 (SB2). These measurements were primarily made on Slurry Mix Evaporator (SME) products, i.e. melter feeds. Some measurements were made on SB2/3 blend Sludge Receipt and Adjustment Tank (SRAT) products. Measurements on radioactive SB3 and SB2/3 samples have been limited to sludge characterization. SB2/3 measurements studied the impact of changing the SRAT acid addition strategy on the SRAT and SME product rheology. SB2/3 measurements also studied the impact of changing the waste loading target (sludge oxides content in glass) of the SME product. SB3 measurements studied the impact of changes in the wash end point and acid addition strategy on the SME product (melter feed) rheology. A summary of the significant findings is given below: SB3 radioactive sludge and blended SB2/3 radioactive sludge were less viscous than SB2 radioactive sludge. SB2/3 b lend sludge is more viscous than SB3 sludge. SB3 simulant SME product rheology was strongly impacted by changing the noble metal concentrations to more closely match those of the qualification sample. This reduction in noble metals produced a lower pH product that was also considerably less viscous. Increased acid addition in the SB2/3 SRAT generally led to less viscous simulant SRAT products. This trend did not persist in the SME products. SME products became more viscous when increased acid was used in the SRAT cycle from 135 per cent up to 170 per cent of stoichiometry, then became less viscous as total acid was increased further to 185 per cent. A significant increase in hydrogen generation occurred between 170 per cent and 185 per cent. The impact of acid addition on SB3 SME products was also variable. The impact of waste loading changes from 31 to 35 to 40 per cent on SB2/3 simulant SME products led to more viscous melter feeds as waste loading increased at constant wt. per cent

Generation of Reactive Astrocytes from NG2 Cells is Regulated by Sonic Hedgehog

Czech Academy of Sciences Publication Activity Database

Honsa, Pavel; Valný, Martin; Kriška, Ján; Matušková, Hana; Harantová, Lenka; Kirdajová, Denisa; Valihrach, Lukáš; Kubista, Mikael; Anděrová, Miroslava

2016-01-01

Roč. 64, č. 9 (2016), s. 1518-1531 ISSN 0894-1491 R&D Projects: GA ČR(CZ) GBP304/12/G069; GA ČR(CZ) GA16-10214S; GA MŠk(CZ) ED1.1.00/02.0109; GA MŠk(CZ) LQ1604; GA MŠk(CZ) EE2.3.30.0045 Institutional support: RVO:68378041 ; RVO:86652036 Keywords : ischemia * NG2 cells * glial scar Subject RIV: EB - Genetics ; Molecular Biology; EI - Biotechnology ; Bionics (BTO-N) Impact factor: 6.200, year: 2016

New antiferromagnetic semiconductor CuCr1.5Sb0.5S4

International Nuclear Information System (INIS)

Kesler, Ya.A.; Koroleva, L.I.; Mikheev, M.G.; Odintsov, A.G.; Filimonov, D.S.

1993-01-01

New halcogenide compound with spinel-antiferromagnetic semiconductor CuCr 1.5 Sb 0.5 S 4 are obtained and studied for the first time. Magnetic properties of this compound, namely, magnetization linear dependence, maximum on PHI(T) curve in the low-temperature area and realization of the Curie-Weis law for paramagnetic susceptibility with negative paramagnetic temperature testiby to the fact that this compound is antiferromagnetic

Stage T1-2 prostate cancer with pretreatment PSA 10 ng/ml or less: radiotherapy or surgery?

International Nuclear Information System (INIS)

Keyser, Douglas; Kupelian, Patrick; Zippe, Craig; Klein, Eric

1996-01-01

Purpose: Presently, patients with pretreatment PSA levels ≤10 ng/ml constitute the majority of cases presenting for definitive treatment. Our aim was to determine whether the type of treatment (radiotherapy versus surgery) affected biochemical failure rates in this group of patients. This study is based on 389 patients treated at a single institution. Material and Methods: The charts of all patients treated with either radiotherapy or prostatectomy alone between 1987 and 1993 were reviewed (n=811). Patients with clinical stage T1 or T2 disease, and a pretreatment PSA level (iPSA) of 10.0 or less were analyzed (n=389). Two hundred forty nine (64%) received radical prostatectomy and 140 (36%) received radiotherapy (median dose 66.6 Gy). Pretreatment patient characteristics including clinical stage, biopsy Gleason score (GS) and iPSA level were not significantly different between the radiation and surgery groups (Table 1). The patients treated with radiation were significantly older (median age 70 years vs. 64 years, p<0.05). A total of 37% of the prostatectomy patients had a positive margin. The median follow-up time was 33 months; 1458 follow-up PSA levels were available for analysis. Biochemical failure was defined as a rise in PSA level of 1.0 ng/ml above the nadir PSA level in radiotherapy cases, or any value above 0.2 ng/ml in the prostatectomy cases. Results: The overall 5 year actuarial biochemical relapse free survival (bRFS) rate was 70%. The 5-year bRFS rates for prostatectomy and radiotherapy were identical (70%) (Fig.1). The significant factors affecting bRFS rates were iPSA level (≤4 vs. 4-10 ng/ml) and Gleason score (≤6 vs. ≥7) (Table 2). The 5-year bRFS rates of patients with iPSA ≤4 vs. iPSA 4-10 ng/ml were 92% vs. 61% respectively, p<0.01. The 5-year clinical relapse free survival was 93%. All clinical failures were preceded by biochemical failure. Patients with positive surgical margins did significantly worse than those with negative

Neutron scattering study of Ce3Au3Sb4

International Nuclear Information System (INIS)

Kasaya, Mitsuo; Katoh, Kenichi; Kohgi, Masahumi; Osakabe, Toyotaka

1993-01-01

Rare-earth compounds with an Y 3 Au 3 Sb 4 -type crystal structure are semiconductors or semi-metals. Among them, Ce 3 Au 3 Sb 4 is a semiconductor with an activation energy of about 640 K and shows no magnetic order down to 1.5 K. The magnetic part of the specific heat for Ce 3 Au 3 Sb 4 obtained by subtracting the value for La 3 Au 3 Sb 4 from the total specific heat of Ce 3 Au 3 Sb 4 shows a broad peak at around 10 K, the origin of which is well explained by the crystalline-field splitting determined by neutron scattering. (author)

Characterization of Cu3SbS3 thin films grown by thermally diffusing Cu2S and Sb2S3 layers

OpenAIRE

Hussain, Arshad; Ahmed, Rashid; Ali, N.; Shaari, A.; Luo, Jing-Ting; Fu, Yong Qing

2017-01-01

Copper antimony sulphide (Cu3SbS3) with a p-type conductivity and optical band gaps in the range of 1.38 to 1.84 eV is considered to be a promising solar harvesting material with non-toxic and economical elements. In this study, we reported the fabrication of Cu3SbS3 thin films using successive thermal evaporation of Cu2S and Sb2S3 layers followed by annealing in an argon atmosphere at a temperature range of 300-375°C. The structural and optical properties of the as-deposited and annealed fil...

(_1-xPu_x)Sb solid solutions. 1. Magnetic configurations

DEFF Research Database (Denmark)

Normile, P.S.; Stirling, W.G.; Mannix, D.

2002-01-01

Neutron and resonant x-ray magnetic scattering studies have been performed on single crystals of three compositions, x=0.25, 0.50, and 0.75 of the (U1-xPux)Sb solid solution. Neutron diffraction has established the ordering wave vector (k=1 for x=0.25 and 0.50, as in x=0, USb, and k=0.25 for x=0....

ABCB1 haplotype and OPRM1 118A > G genotype interaction in methadone maintenance treatment pharmacogenetics

Directory of Open Access Journals (Sweden)

Barratt DT

2012-04-01

deviation 35 ± 5 versus 180 ± 65 mg/day, P < 0.01 and Ctrough (78 ± 22 versus 177 ± 97 ng/mL, P < 0.05 than ABCB1 wild-type subjects. Among subjects with the most common ABCB1 haplotype combination (wild-type with 61A:1199G:1236T:2677T:3435T, the OPRM1 118 A/G genotype was associated with a significantly higher Ctrough than 118 A/A (250 ± 126 versus 108 ± 36 ng/mL, P = 0.016. No ABCB1 haplotype group or OPRM1 genotype was associated with dose or Ctrough without taking into account confounding genetic variability at the other locus. Therefore, two interacting pharmacogenetic determinants of methadone maintenance treatment response were identified, ie, ABCB1, where variants are associated with lower methadone requirements, and OPRM1, where the variant is associated with higher methadone requirements.Conclusion: These opposing pharmacogenetic effects therefore need to be considered in combination when assessing methadone maintenance treatment pharmacogenetics.Keywords: methadone, opiate substitution treatment, ABCB1, P-glycoprotein, OPRM1, receptors, opioid, mu

[Effect of sucralfate on cytokines in rat with paraquat poisoning].

Science.gov (United States)

Zhu, Junbo; Yu, Yongtao; Li, Hongbo; Zheng, Fenshuang; Lin, Ruyun; Yang, Chun'ai

2018-03-01

To explore the effect of sucralfate on cytokines in rats with paraquat (PQ) poisoning. Seventy-two healthy male Sprague-Dawley (SD) rats were randomly divided into PQ model group, sodium bicarbonate intervention group (SB group) and sucralfate suspension gel group (LTL group), with 24 rats in each group. The rat model of PQ poisoning was reproduced by one-time intragastric administration of PQ solution 25 mg/kg. The rats in SB group and LTL group were intragastricly administrated with 5 mL×kg -1 ×d -1 of 100 g/L sodium bicarbonate or 200 g/L sucralfate at 2 hours after exposing to PQ, and the rats in PQ model group were given the same amount of sterile saline. The abdominal aortic blood of rats was collected at 1, 3, 6, and 10 days after PQ poisoning, and the levels of serum tumor necrosis factor-α (TNF-α), interleukin-10 (IL-10) and transforming growth factor-β1 (TGF-β1) were determined by enzyme-linked immunosorbent assay (ELISA). The left lung tissue was harvested, and lung wet/dry weight (W/D) ratio was assessed. With prolonged exposure, lung W/D ratios in all the groups were increased gradually, reached the peak at 10 days, but in the SB group and LTL group, the amplitude of increase was obviously reduced, the ratios were significantly decreased at 6 days and 10 days as compared with those in PQ model group (SB group vs. PQ model group: 4.99±0.79 vs. 6.98±0.86 at 6 days, 5.61±0.36 vs. 7.36±0.95 at 10 days; LTL group vs. PQ model group: 4.61±0.24 vs. 6.98±0.86 at 6 days, 4.24±0.20 vs. 7.36±0.95 at 10 days, all P 0.05). After PQ poisoning, the levels of TNF-α, IL-10 and TGF-β1 were elevated, and reached the peak at 3 days and then decreased gradually. Compared with the PQ model group, serum TNF-α, IL-10 and TGF-β1 levels in SB group and LTL group were decreased significantly [SB group vs. PQ model group: 3-day TNF-α (ng/L) was 147.6±12.3 vs. 168.2±11.3, 3-day IL-10 (ng/L) was 65.4±3.2 vs. 115.1±9.2, 3-day TGF-β1 (ng/L) was 356.3±50.3 vs

Infrared Spectra of Novel NgBeSO2 Complexes (Ng = Ne, Ar, Kr, Xe) in Low Temperature Matrixes.

Science.gov (United States)

Yu, Wenjie; Liu, Xing; Xu, Bing; Xing, Xiaopeng; Wang, Xuefeng

2016-11-03

The novel noble-gas complexes NgBeSO 2 (Ng = Ne, Ar, Kr, Xe) have been prepared in the laser-evaporated beryllium atom reactions with SO 2 in low-temperature matrixes. Doped with heavier noble gas, the guest (Ar, Kr, Xe) atom can substitute neon to form more stable complex. Infrared spectroscopy and theoretical calculations are used to confirm the band assignment. The dissociation energies are calculated at 0.9, 4.0, 4.7, and 6.0 kcal/mol for NeBeSO 2 , ArBeSO 2 , KrBeSO 2 , and XeBeSO 2 , respectively, at the CCSD(T) level. Quantum chemical calculations demonstrate that the Ng-Be bonds in NgBeSO 2 could be formed by the combination of electron-donation and ion-induced dipole interactions. The Wiberg bond index (WBI) values of Ng-Be bonds and LOL (localized orbital locator) profile indicate that the Ng-Be bond exhibits a gradual increase in covalent character along Ne to Xe.

Can iron plaque affect Sb(III) and Sb(V) uptake by plants under hydroponic conditions

NARCIS (Netherlands)

Ji, Ying; Lenz, Markus; Lenz, Markus; Schulin, Rainer; Tandy, Susan

2018-01-01

Antimony (Sb) contamination of soils is of concern due to h uman activities such as recycling of Sb containing Pb acid batteries, shooting and mining. However Sb uptake by plants is poorly documented, especially when plants are growing on waterlogged soils and iron plaques form on their roots. The

(Ga,Fe)Sb: A p-type ferromagnetic semiconductor

Energy Technology Data Exchange (ETDEWEB)

Tu, Nguyen Thanh; Anh, Le Duc; Tanaka, Masaaki [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Hai, Pham Nam [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-0033 (Japan)

2014-09-29

A p-type ferromagnetic semiconductor (Ga{sub 1−x},Fe{sub x})Sb (x = 3.9%–13.7%) has been grown by low-temperature molecular beam epitaxy (MBE) on GaAs(001) substrates. Reflection high energy electron diffraction patterns during the MBE growth and X-ray diffraction spectra indicate that (Ga,Fe)Sb layers have the zinc-blende crystal structure without any other crystallographic phase of precipitates. Magnetic circular dichroism (MCD) spectroscopy characterizations indicate that (Ga,Fe)Sb has the zinc-blende band structure with spin-splitting induced by s,p-d exchange interactions. The magnetic field dependence of the MCD intensity and anomalous Hall resistance of (Ga,Fe)Sb show clear hysteresis, demonstrating the presence of ferromagnetic order. The Curie temperature (T{sub C}) increases with increasing x and reaches 140 K at x = 13.7%. The crystal structure analyses, magneto-transport, and magneto-optical properties indicate that (Ga,Fe)Sb is an intrinsic ferromagnetic semiconductor.

In planta Transformed Cumin (Cuminum cyminum L.) Plants, Overexpressing the SbNHX1 Gene Showed Enhanced Salt Endurance

OpenAIRE

Pandey, Sonika; Patel, Manish Kumar; Mishra, Avinash; Jha, Bhavanath

2016-01-01

Cumin is an annual, herbaceous, medicinal, aromatic, spice glycophyte that contains diverse applications as a food and flavoring additive, and therapeutic agents. An efficient, less time consuming, Agrobacterium-mediated, a tissue culture-independent in planta genetic transformation method was established for the first time using cumin seeds. The SbNHX1 gene, cloned from an extreme halophyte Salicornia brachiata was transformed in cumin using optimized in planta transformation method. The SbN...

Peculiarities of thermoelectric half-Heusler phase formation in Zr–Co–Sb ternary system

Energy Technology Data Exchange (ETDEWEB)

Romaka, V.V., E-mail: romakav@lp.edu.ua [Department of Applied Material Science and Materials Engineering, Lviv Polytechnic National University, Ustyyanovycha Str. 5, 79013 Lviv (Ukraine); Institut für Physikalische Chemie, Universität Wien, Währingerstr. 42, A-1090 Wien (Austria); Romaka, L. [Inorganic Chemistry Department, Ivan Franko Lviv National University, Kyryla and Mefodiya Str. 6, 79005 Lviv (Ukraine); Rogl, P. [Institut für Physikalische Chemie, Universität Wien, Währingerstr. 42, A-1090 Wien (Austria); Stadnyk, Yu. [Inorganic Chemistry Department, Ivan Franko Lviv National University, Kyryla and Mefodiya Str. 6, 79005 Lviv (Ukraine); Melnychenko, N. [Inorganic Chemistry Department, Ivan Franko Lviv National University, Kyryla and Mefodiya Str. 6, 79005 Lviv (Ukraine); Army Academy named after Hetman Petro Sahaydachnyi, Gvardijska Str. 32, 79012 Lviv (Ukraine); Korzh, R.; Duriagina, Z. [Department of Applied Material Science and Materials Engineering, Lviv Polytechnic National University, Ustyyanovycha Str. 5, 79013 Lviv (Ukraine); Horyn, A. [Inorganic Chemistry Department, Ivan Franko Lviv National University, Kyryla and Mefodiya Str. 6, 79005 Lviv (Ukraine)

2014-02-05

Highlights: • Phase relations for the Zr–Co–Sb system at 500 °C. • Homogeneity region for half-Heusler phase. • The distribution of DOS for Zr{sub 1+x}Co{sub 1−x}Sb predicts transition from semiconductor (x = 0) to metallic (x = 0.13) like behavior. • The existence of the solid solution Zr{sub 5}Co{sub x}Sb{sub 3+y} (x = 0.0–1.0, y = 0.0–1.0). -- Abstract: The phase equilibria in the Zr–Co–Sb ternary system were studied at 873 K by means of X-ray and metallographic analyses in the whole concentration range. The interaction between the elements results the formation of four ternary compounds at investigated temperature: ZrCoSb (MgAgAs-type), Zr{sub 6}CoSb{sub 2} (K{sub 2}UF{sub 6}-type), Zr{sub 5}CoSb{sub 3} (Hf{sub 5}CuSn{sub 3}-type) and Zr{sub 5}Co{sub 0.5}Sb{sub 2.5} (W{sub 5}Si{sub 3}-type). The limited composition Zr{sub 5}CoSb{sub 3} of the solid solution based on the Zr{sub 5}Sb{sub 3−4} binaries is considered as compound with Hf{sub 5}CuSn{sub 3} structure type. The influence of the disordering and defects in the crystal structure of ZrCoSb on the physical properties was analyzed. The performed electronic structure calculations are in good agreement with electrical and magnetic studies.

MOCVD growth and structural characterization of In-Sb-Te nanowires

International Nuclear Information System (INIS)

Selmo, S.; Fanciulli, M.; Cecchi, S.; Cecchini, R.; Wiemer, C.; Longo, M.; Rotunno, E.; Lazzarini, L.

2016-01-01

In this work, the self-assembly of In 3 Sb 1 Te 2 and In-doped Sb 4 Te 1 nanowires (NWs) for phase change memories application was achieved by metal organic chemical vapor deposition, coupled with vapor-liquid-solid (VLS) mechanism, catalyzed by Au nanoparticles. Single crystal In 3 Sb 1 Te 2 and In-doped Sb 4 Te 1 NWs were obtained for different reactor pressures at 325 C. The parameters influencing the NW self-assembly were studied and the compositional, morphological, and structural analysis of the grown structures was performed, also comparing the effect of the used substrate (crystalline Si and SiO 2 ). In both cases, NWs of several micrometer in length and with diameters as small as 15 nm were obtained. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Microstructures and thermoelectric properties of GeSbTe based layered compounds

Energy Technology Data Exchange (ETDEWEB)

Yan, F.; Zhu, T.J.; Zhao, X.B. [Zhejiang University, State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Hangzhou (China); Dong, S.R. [Zhejiang University, Department of Information and Electronics Engineering, Hangzhou (China)

2007-08-15

Microstructures and thermoelectric properties of Ge{sub 1}Sb{sub 2}Te{sub 4} and Ge{sub 2}Sb{sub 2}Te{sub 5} chalcogenide semiconductors have been investigated to explore the possibility of their thermoelectric applications. The phase transformation from the face-centered cubic to hexagonal structure was observed in Ge{sub 2}Sb{sub 2}Te{sub 5} compounds prepared by the melt spinning technique. The Seebeck coefficient and electrical resistivity of the alloys were increased due to the enhanced scattering of charge carriers at grain boundaries. The maximum power factors of the rapidly solidified Ge{sub 1}Sb{sub 2}Te{sub 4} and Ge{sub 2}Sb{sub 2}Te{sub 5} attained 0.975 x 10{sup -3} Wm{sup -1}K{sup -2} at 750 K and 0.767 x 10{sup -3} Wm{sup -1}K{sup -2} at 643 K respectively, higher than those of water quenched counterparts, implying that thermoelectric properties of GeSbTe based layered compounds can be improved by grain refinement. The present results show this class of chalcogenide semiconductors is promising for thermoelectric applications. (orig.)

Crystallization and memory programming characteristics of Ge-doped SbTe materials of varying Sb : Te ratio

International Nuclear Information System (INIS)

Jeong, Jeung-hyun; Lee, Hyun Seok; Lee, Suyoun; Lee, Taek Sung; Kim, Won Mok; Wu Zhe; Cheong, Byung-ki; Kim, Seul Cham; Oh, Kyu Hwan

2009-01-01

A phase change memory (PCM) utilizes resistivity changes accompanying fast transitions from an amorphous to a crystalline phase (SET) and vice versa (RESET). An investigation was made on the SET characteristics of PCM cells with Ge-doped SbTe (Ge-ST) materials of two different Sb : Te ratios (4.53 and 2.08). For the material of higher Sb : Te (4.53), a SET operation was completed within several tens of nanoseconds via nucleation-free crystallization whereas the material of lower Sb : Te (2.08) rendered a slower SET operation requiring several hundred nanoseconds for a nucleation-mediated crystallization. From measurements of nucleation and growth kinetics via laser-induced crystallization, the observed SET characteristics of the former case were found to derive from a growth time about 10 3 times shorter than the nucleation time and those of the latter from a much shorter nucleation time as well as a longer growth time than in the former case. The measured nucleation kinetics of the lower Sb : Te (2.08) material is unexpected from the existing data, which has led us to advance an interesting finding that there occurs a trend-reversing change in the nucleation kinetics of the Ge-ST materials around the eutectic composition (Sb : Te ∼2.6); nucleation is accelerated with the increase in the Sb : Te ratio above Sb : Te of 2.6, but with a decrease in the Sb : Te ratio below it.

Polarity-dependent resistance switching in GeSbTe phase-change thin films : The importance of excess Sb in filament formation

NARCIS (Netherlands)

Pandian, Ramanathaswamy; Kooi, Bart J.; Oosthoek, Jasper L. M.; van den Dool, Pim; Palasantzas, George; Pauza, Andrew

2009-01-01

We show that polarity-dependent resistance switching in GeSbTe thin films depends strongly on Sb composition by comparing current-voltage characteristics in Sb-excess Ge(2)Sb(2+x)Te(5) and stoichiometric Ge(2)Sb(2)Te(5) samples. This type of switching in Ge(2)Sb(2+x)Te(5) films is reversible with

Three dimensional atom probe imaging of GaAsSb quantum rings

International Nuclear Information System (INIS)

Beltran, A.M.; Marquis, E.A.; Taboada, A.G.; Ripalda, J.M.; Garcia, J.M.; Molina, S.I.

2011-01-01

Unambiguous evidence of ring-shaped self-assembled GaSb nanostructures grown by molecular beam epitaxy is presented on the basis of atom-probe tomography reconstructions and dark field transmission electron microscopy imaging. The GaAs capping process causes a strong segregation of Sb out of the center of GaSb quantum dots, leading to the self-assembled GaAs x Sb 1-x quantum rings of 20-30 nm in diameter with x∼0.33. -- Highlights: → Atom-probe tomography resolves QR morphology of GaSb self-assembled GaSb buried nanostructures. → From atom-probe tomography compositional distribution has been obtained. → Strong segregation and morphological changes are observed with respect to uncapped QR.

On possibility of superconductivity in SnSb: A first principle study

Energy Technology Data Exchange (ETDEWEB)

Dabhi, Shweta D. [Department of Physics, M. K. Bhavnagar University, Bhavnagar 364001 (India); Shrivastava, Deepika [Department of Physics, Barkatullah University, Bhopal 462026 (India); Jha, Prafulla K., E-mail: prafullaj@yahoo.com [Department of Physics, Faculty of Science, The M. S. University of Baroda, Vadodara 390002 (India); Sanyal, Sankar P. [Department of Physics, Barkatullah University, Bhopal 462026 (India)

2016-09-15

Highlights: • Superconducting property of SnSb is predicted by ab-initio calculations. • Electronic properties of SnSb in RS phase shows metallic behaviour similar to SnAs. • Phonon dispersion confirms the dynamical stability of SnSb in RS phase. • Superconducting transition temperature is 3.1 K, slightly lower than that of SnAs. • Calculated thermodynamic properties are also reported. - Abstract: The electronic, phonon structure and superconducting properties of tin antimonide (SnSb) in rock-salt (RS) structure are calculated using first-principles density functional theory. The electronic band structure and density of states show metallic behavior. The phonon frequencies are positive throughout the Brillouin zone in rock-salt structure indicating its stability in that phase. Superconductivity of SnSb in RS phase is discussed in detail by calculating phonon linewidths, Eliashberg spectral function, electron-phonon coupling constant and superconducting transition temperature. SnSb is found to have a slightly lower T{sub C} (3.1 K), as compared to SnAs.

Passive mode locking of a GaSb-based quantum well diode laser emitting at 2.1 μm

Energy Technology Data Exchange (ETDEWEB)

Merghem, K.; Aubin, G.; Ramdane, A. [CNRS, Laboratory for Photonics and Nanostructures, Route de Nozay, 91460 Marcoussis (France); Teissier, R.; Baranov, A. N. [Institute of Electronics and Systems, CNRS UMR 5214, University of Montpellier, 34095 Montpellier (France); Monakhov, A. M. [Ioffe Institute, 194021 Saint Petersburg (Russian Federation)

2015-09-14

We demonstrate passive mode locking of a GaSb-based diode laser emitting at 2.1 μm. The active region of the studied device consists in two 10-nm-thick GaInSbAs/GaAlSbAs quantum wells. Passive mode locking has been achieved in a two-section laser with one of the sections used as a saturable absorber. A microwave signal at 20.6 GHz, measured in the electrical circuit of the absorber, corresponds to the fundamental photon round-trip frequency in the laser resonator. The linewidth of this signal as low as ∼10 kHz has been observed at certain operating conditions, indicating low phase noise mode-locked operation.

Passive mode locking of a GaSb-based quantum well diode laser emitting at 2.1 μm

International Nuclear Information System (INIS)

Merghem, K.; Aubin, G.; Ramdane, A.; Teissier, R.; Baranov, A. N.; Monakhov, A. M.

2015-01-01

We demonstrate passive mode locking of a GaSb-based diode laser emitting at 2.1 μm. The active region of the studied device consists in two 10-nm-thick GaInSbAs/GaAlSbAs quantum wells. Passive mode locking has been achieved in a two-section laser with one of the sections used as a saturable absorber. A microwave signal at 20.6 GHz, measured in the electrical circuit of the absorber, corresponds to the fundamental photon round-trip frequency in the laser resonator. The linewidth of this signal as low as ∼10 kHz has been observed at certain operating conditions, indicating low phase noise mode-locked operation

A surface-gated InSb quantum well single electron transistor

International Nuclear Information System (INIS)

Orr, J M S; Buckle, P D; Fearn, M; Storey, C J; Buckle, L; Ashley, T

2007-01-01

Single electron charging effects in a surface-gated InSb/AlInSb QW structure are reported. This material, due to its large g-factor and light effective mass, offers considerable advantages over more commonly used materials, such as GaAs, for quantum information processing devices. However, differences in material and device technology result in significant processing challenges. Simple Coulomb blockade and quantized confinement models are considered to explain the observation of conductance oscillations in these structures. The charging energy (e 2 /C) is found to be comparable with the energy spectrum for single particle states (ΔE)

TANK 40 FINAL SB4 CHEMICAL CHARACTERIZATION RESULTS

International Nuclear Information System (INIS)

Best, J.

2008-01-01

A sample of Sludge Batch 4 (SB4) was pulled from Tank 40 in order to obtain radionuclide inventory analyses necessary for compliance with the Waste Acceptance Product Specifications (WAPS). This sample was also analyzed for elemental and chemical composition including noble metals. These analyses along with the WAPS analyses will help define the composition of the sludge currently in Tank 40 which is currently being fed to DWPF and will become part of Sludge Batch 5 (SB5). At SRNL the 3-L Tank 40 SB4 sample was transferred from the shipping container into a 4-L vessel and solids allowed to settle overnight. Supernate was then siphoned off and circulated through the shipping container to complete the transfer of the sample. Following thorough mixing of the 3-L sample, a 280 g sub-sample was removed. This sub-sample was then utilized for all subsequent analytical samples. Eight separate aliquots of the slurry were digested, four with HNO 3 /HCl in sealed Teflon(reg s ign) vessels and four in Na 2 O 2 using Zr crucibles. Due to the use of Zr crucibles and Na in the peroxide fusions, Na and Zr cannot be determined from this preparation. Three glass standards were digested along with a blank for each preparation. Each aqua regia digestion and blank was diluted and submitted to Analytical Development (AD) for inductively coupled plasma-atomic emission spectroscopy (ICP-AES) analysis, inductively coupled plasma-mass spectrometry (ICP-MS) analysis, and cold vapor atomic absorption (CV-AA) analysis. Equivalent dilutions of the peroxide fusion digestions and blank were submitted to AD for ICP-AES analysis. Tank 40 SB4 supernate was collected from a mixed slurry sample in the SRNL Shielded Cells and submitted to AD for ICP-AES and ICP-MS. Weighted dilutions of slurry were submitted for ion chromatography (IC), total inorganic carbon/total organic carbon (TIC/TOC), and total base analyses. A sample of Tank 40 SB4 decant was collected by carefully removing the supernate phase

Structural, electric and kinetic parameters of ternary alloys of GeSbTe

Energy Technology Data Exchange (ETDEWEB)

Morales-Sanchez, E. [Centro de Investigacion y de Estudios Avanzados del IPN, Unidad Queretaro, Libramiento Norponiente 2000, Ap. Postal 13, Juriquilla, Queretaro, C. P. 76230, (Mexico)]. E-mail: m6007@ciateq.net.mx; Prokhorov, E.F. [Centro de Investigacion y de Estudios Avanzados del IPN, Unidad Queretaro, Libramiento Norponiente 2000, Ap. Postal 13, Juriquilla, Queretaro, C. P. 76230, (Mexico); Gonzalez-Hernandez, J. [Centro de Investigacion y de Estudios Avanzados del IPN, Unidad Queretaro, Libramiento Norponiente 2000, Ap. Postal 13, Juriquilla, Queretaro, C. P. 76230, (Mexico); Mendoza-Galvan, A. [Centro de Investigacion y de Estudios Avanzados del IPN, Unidad Queretaro, Libramiento Norponiente 2000, Ap. Postal 13, Juriquilla, Queretaro, C. P. 76230, (Mexico)

2005-01-03

Thin amorphous films of GeSbTe have been widely employed in the technology used for phase change optical memory or compact disks. In this article, we report on measurements of resistance, transmittance, and X-ray diffraction in thin films with stoichiometric compositions of Ge{sub 1}Sb{sub 4}Te{sub 7}, Ge{sub 1}Sb{sub 2}Te{sub 4}, Ge{sub 2}Sb{sub 2}Te{sub 5}, and Ge{sub 4}Sb{sub 1}Te{sub 5.} The resistivity, lattice constant, and the temperature at which transformation from the amorphous phase to the cubic crystalline structure occurs were calculated for each stoichiometric composition, and the energy activation was determined, applying Kissinger's model. It was found that the Ge{sub 4}Sb{sub 1}Te{sub 5} composition has the highest crystallization temperature (425 K), the highest resistivity (0.178 {omega} cm), the greatest E{sub a} (3.09 eV), and the lowest lattice constant (a=5.975 A) in the cubic phase at 170 deg C.

Lattice vibrations study of Ga1-xInxAsySb1-y quaternary alloys with low (In, As) content grown by liquid phase epitaxy

International Nuclear Information System (INIS)

Olvera-Herandez, J; Olvera-Cervantes, J; Rojas-Lopez, M; Navarro-Contreras, H; Vidal, M A; Anda, F de

2006-01-01

Raman scattering spectroscopy was used to measure and analyze the lattice vibrations in some quaternary Ga 1-x In x As y Sb 1-y alloys with low (In, As) contents (0.03 0 C. High Resolution X-Ray Diffraction results showed profiles associated with a quaternary layer lattice matched to the GaSb substrate as obtained from the (004) reflection. The experimental diffractograms were simulated to estimate alloy composition, thickness and lattice mismatch of the layer. Raman scattering results show phonon frequencies associated to the TO and LO GaAs-like modes as well as GaSb + InAs-like mode, which are characteristic of this quaternary alloy. The As content dependence of the phonon frequency measured in this alloy for low (In, As) contents agree well with the modified Random-Element Isodisplacement (REI) model and also with other available experimental reports. This method can also be used to estimate alloy compositions for this kind of quaternary alloys

Photoconductivity in the chalcohalide semiconductor, SbSeI: a new candidate for hard radiation detection.

Science.gov (United States)

Wibowo, Arief C; Malliakas, Christos D; Liu, Zhifu; Peters, John A; Sebastian, Maria; Chung, Duck Young; Wessels, Bruce W; Kanatzidis, Mercouri G

2013-06-17

We investigated an antimony chalcohalide compound, SbSeI, as a potential semiconductor material for X-ray and γ-ray detection. SbSeI has a wide band gap of 1.70 eV with a density of 5.80 g/cm(3), and it crystallizes in the orthorhombic Pnma space group with a one-dimensional chain structure comprised of infinite zigzag chains of dimers [Sb2Se4I8]n running along the crystallographic b axis. In this study, we investigate conditions for vertical Bridgman crystal growth using combinations of the peak temperature and temperature gradients as well as translation rate set in a three-zone furnace. SbSeI samples grown at 495 °C peak temperature and 19 °C/cm temperature gradient with 2.5 mm/h translation rate produced a single phase of columnar needlelike crystals aligned along the translational direction of the growth. The ingot sample exhibited an n-type semiconductor with resistivity of ∼10(8) Ω·cm. Photoconductivity measurements on these specimens allowed us to determine mobility-lifetime (μτ) products for electron and hole carriers that were found to be of similar order of magnitude (∼10(-4) cm(2)/V). Further, the SbSeI ingot with well-aligned, one-dimensional columnar needlelike crystals shows an appreciable response of Ag Kα X-ray.

Prediction of Curve Correction Using Alternate Level Pedicle Screw Placement in Patients With Adolescent Idiopathic Scoliosis (AIS) Lenke 1 and 2 Using Supine Side Bending (SB) and Fulcrum Bending (FB) Radiograph.

Science.gov (United States)

Kwan, Mun Keong; Zeyada, Hassan E; Chan, Chris Yin Wei

2015-10-15

Prospective cohort study. To compare side bending (SB) and fulcrum bending (FB) radiographs in patients with adolescent idiopathic scoliosis (AIS) and effect of magnitude and AR curves on curve correctability. The prediction of correction using side bending flexibility (SBF) and fulcrum bending flexibility (FBF) in alternate level pedicle screw (PS) configuration and effect of curve magnitude and AR curves are not well understood. 100 AIS Lenke 1 and 2 were recruited. Curve magnitude was stratified to G1 (41°-60°), G2 (61°-80°), G3 (>80°). The main thoracic (MT) curves were subclassified to AR curves [Miyanji F, Pawelek JB, Van Valin SE, et al. Is the lumbar modifier useful in surgical decision making? Defining two distinct Lenke 1A curve patterns. Spine 2008;33:2545-51]. Preoperatively SBF and FBF were determined whereas postoperative parameters were correction rate (CR), fulcrum bending correction index (FBCI), and side bending correction index (SBCI). Correlation test were carried out between SBF, FBF versus CR for the cohort. There were 38 (G1), 42 (G2), and 20 (G3) patients. 34% were AR curves. SBF for G1, G2, and G3 were 61.3 ± 14.4, 59.2 ± 16.2 and 43.1 ± 13.1% (P = 0.000) whereas FBF for G1, G2, and G3 were 71.1 ± 16.5, 58.3 ± 18.1 and 52.7 ± 17.1% (P = 0.000). The CR was G1 (74.5 ± 11.5%), G2 (69.2 ± 12.7%), and G3 (70.2 ± 8.6%). FBCI was 1.11 ± 0.3 (G1), 1.28 ± 0.4 (G2) and 1.48 ± 0.6 for G3. SBCI was 1.26 ± 0.2 (G1), 1.50 ± 0.5 (G2), and 1.72 ± 0.4 for G3. There was strong correlation for SBF and FBF versus CR for G1 and G2. For G3, a very strong correlation was established between SBF (r = 0.846, r = 0.716) and FBF versus CR (r = 0.700, r = 0.540). AR curves demonstrated higher SBF and FBF. CR remains almost constant in G1, G2, and G3. SBCI and FBCI increase significantly in G1, G2, and G3. Correlation between SBF and FBF and CR was strong for G1, G2, and very strong for G3. AR curves showed better correctability with SB and FB films.

MOCVD growth and structural characterization of In-Sb-Te nanowires

Energy Technology Data Exchange (ETDEWEB)

Selmo, S.; Fanciulli, M. [Laboratorio MDM, IMM-CNR, Unita di Agrate Brianza (Italy); Dipartimento di Scienza dei Materiali, University of Milano Bicocca, Milano (Italy); Cecchi, S.; Cecchini, R.; Wiemer, C.; Longo, M. [Laboratorio MDM, IMM-CNR, Unita di Agrate Brianza (Italy); Rotunno, E.; Lazzarini, L. [IMEM-CNR, Parma (Italy)

2016-02-15

In this work, the self-assembly of In{sub 3}Sb{sub 1}Te{sub 2} and In-doped Sb{sub 4}Te{sub 1} nanowires (NWs) for phase change memories application was achieved by metal organic chemical vapor deposition, coupled with vapor-liquid-solid (VLS) mechanism, catalyzed by Au nanoparticles. Single crystal In{sub 3}Sb{sub 1}Te{sub 2} and In-doped Sb{sub 4}Te{sub 1} NWs were obtained for different reactor pressures at 325 C. The parameters influencing the NW self-assembly were studied and the compositional, morphological, and structural analysis of the grown structures was performed, also comparing the effect of the used substrate (crystalline Si and SiO{sub 2}). In both cases, NWs of several micrometer in length and with diameters as small as 15 nm were obtained. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Reactive ion etching of GaSb, (Al,Ga)Sb, and InAs for novel device applications

International Nuclear Information System (INIS)

LaTulipe, D.C.; Frank, D.J.; Munekata, H.

1991-01-01

Although a variety of novel device proposals for GaSb/(Al,Ga)Sb/InAs heterostructures have been made, relatively little is known about processing these materials. The authors of this paper have studied the reactive ion etching characteristics of GaSb, (Al,Ga)Sb, and InAs in both methane/hydrogen and chlorine gas chemistries. At conditions similar to those reported elsewhere for RIE of InP and GaAs in CH 4 /H 2 , the etch rate of (Al,Ga)Sb was found to be near zero, while GaSb and InAs etched at 200 Angstrom/minute. Under conditions where the etch mechanism is primarily physical sputtering, the three compounds etch at similar rates. Etching in Cl 2 was found to yield anistropic profiles, with the etch rate of (Al,Ga)Sb increasing with Al mole fraction, while InAs remains unetched. Damage to the InAs stop layer was investigated by sheet resistance and mobility measurements. These etching techniques were used to fabricate a novel InAs- channel FET composed of these materials. Several scanning electron micrographs of etching results are shown along with preliminary electrical characteristics

Safety and Immunogenicity of EBA-175 RII-NG Malaria Vaccine Administered Intramuscularly in Semi-Immune Adults: A Phase 1, Double-Blinded Placebo Controlled Dosage Escalation Study.

Science.gov (United States)

Koram, Kwadwo A; Adu, Bright; Ocran, Josephine; Karikari, Yaa S; Adu-Amankwah, Susan; Ntiri, Michael; Abuaku, Benjamin; Dodoo, Daniel; Gyan, Ben; Kronmann, Karl C; Nkrumah, Francis

2016-01-01

The erythrocyte binding antigen region II (EBA-175 RII) is a Plasmodium falciparum ligand that mediates erythrocyte invasion and is considered an important malaria vaccine candidate. A phase Ia trial in malaria naïve adults living in the United States found the recombinant non-glycosylated vaccine antigen, EBA-175 RII-NG adjuvanted with aluminium phosphate to be safe, immunogenic and capable of inducing biologically active antibodies that can inhibit parasite growth in vitro. The aim of the current study was to assess the safety and immunogenicity of this vaccine in malaria exposed semi-immune healthy adults living in a malaria endemic country, Ghana. In this double-blinded, placebo controlled, dose escalation phase I trial, eighteen subjects per group received ascending dose concentrations (5 μg, 20 μg or 80 μg) of the vaccine intramuscularly at 0, 1 and 6 months, while 6 subjects received placebo (normal saline). The primary end point was the number of subjects experiencing Grade 3 systemic or local adverse events within 14 days post-vaccination. Serious adverse events were assessed throughout the study period. Blood samples for immunological analyses were collected at days 0, 14, 28, 42, 180 and 194. A total of 52 subjects received three doses of the vaccine in the respective groups. No serious adverse events were reported. The majority of all adverse events reported were mild to moderate in severity, with local pain and tenderness being the most common. All adverse events, irrespective of severity, resolved without any sequelae. Subjects who received any of the EBA-175 RII-NG doses had high immunoglobulin G levels which moderately inhibited P. falciparum growth in vitro, compared to those in the placebo group. In conclusion, the EBA-175 RII-NG vaccine was safe, well tolerated and immunogenic in malaria semi-immune Ghanaian adults. Its further development is recommended. ClinicalTrials.gov. Identifier: NCT01026246.

Safety and Immunogenicity of EBA-175 RII-NG Malaria Vaccine Administered Intramuscularly in Semi-Immune Adults: A Phase 1, Double-Blinded Placebo Controlled Dosage Escalation Study.

Directory of Open Access Journals (Sweden)

Kwadwo A Koram

Full Text Available The erythrocyte binding antigen region II (EBA-175 RII is a Plasmodium falciparum ligand that mediates erythrocyte invasion and is considered an important malaria vaccine candidate. A phase Ia trial in malaria naïve adults living in the United States found the recombinant non-glycosylated vaccine antigen, EBA-175 RII-NG adjuvanted with aluminium phosphate to be safe, immunogenic and capable of inducing biologically active antibodies that can inhibit parasite growth in vitro. The aim of the current study was to assess the safety and immunogenicity of this vaccine in malaria exposed semi-immune healthy adults living in a malaria endemic country, Ghana. In this double-blinded, placebo controlled, dose escalation phase I trial, eighteen subjects per group received ascending dose concentrations (5 μg, 20 μg or 80 μg of the vaccine intramuscularly at 0, 1 and 6 months, while 6 subjects received placebo (normal saline. The primary end point was the number of subjects experiencing Grade 3 systemic or local adverse events within 14 days post-vaccination. Serious adverse events were assessed throughout the study period. Blood samples for immunological analyses were collected at days 0, 14, 28, 42, 180 and 194. A total of 52 subjects received three doses of the vaccine in the respective groups. No serious adverse events were reported. The majority of all adverse events reported were mild to moderate in severity, with local pain and tenderness being the most common. All adverse events, irrespective of severity, resolved without any sequelae. Subjects who received any of the EBA-175 RII-NG doses had high immunoglobulin G levels which moderately inhibited P. falciparum growth in vitro, compared to those in the placebo group. In conclusion, the EBA-175 RII-NG vaccine was safe, well tolerated and immunogenic in malaria semi-immune Ghanaian adults. Its further development is recommended.ClinicalTrials.gov. Identifier: NCT01026246.

Tuning the magnetocaloric response in half-Heusler/Heusler MnNi1 +xSb solid solutions

Science.gov (United States)

Levin, Emily E.; Bocarsly, Joshua D.; Wyckoff, Kira E.; Pollock, Tresa M.; Seshadri, Ram

2017-12-01

Materials with a large magnetocaloric response are associated with a temperature change upon the application of a magnetic field and are of interest for applications in magnetic refrigeration and thermomagnetic power generation. The usual metric of this response is the gravimetric isothermal entropy change Δ SM . The use of a simple proxy for the Δ SM that is based on density functional theory (DFT) calculations of the magnetic electronic structure suggests that half-Heusler MnNiSb should be a better magnetocaloric than the corresponding Heusler compound MnNi2Sb . Guided by this observation, we present a study of MnNi1 +xSb (x =0 , 0.25, 0.5, 0.75, and 1.0) to evaluate relevant structural and magnetic properties. DFT stability calculations suggest that the addition of Ni takes place at a symmetrically distinct Ni site in the half-Heusler structure and support the observation using synchrotron x-ray diffraction of a homogeneous solid solution between the half-Heusler and Heusler end members. There is a maximum in the saturation magnetization at x =0.5 and the Curie temperature systematically decreases with increasing x . Δ SM for a maximum magnetic field change of Δ H =5 T monotonically decreases in magnitude from -2.93 J kg-1K-1 in the half-Heusler to -1.35 J kg-1K-1 in the Heusler compound. The concurrent broadening of the magnetic transition results in a maximum in the refrigerant capacity at x =0.75 . The Curie temperature of this system is highly tunable between 350 K and 750 K, making it ideal for low grade waste heat recovery via thermomagnetic power generation. The increase in Δ SM with decreasing x may be extendable to other MnNi2Z Heusler systems that are currently under investigation for use in magnetocaloric refrigeration applications.

Sb,123121 nuclear quadrupole resonance as a microscopic probe in the Te-doped correlated semimetal FeSb2: Emergence of electronic Griffith phase, magnetism, and metallic behavior

Science.gov (United States)

Gippius, A. A.; Zhurenko, S. V.; Hu, R.; Petrovic, C.; Baenitz, M.

2018-02-01

Sb,123121 nuclear quadrupole resonance (NQR) was applied to Fe(Sb1-xTex)2 in the low doping regime (x =0 , 0.01, and 0.05) as a microscopic zero field probe to study the evolution of 3 d magnetism and the emergence of metallic behavior. Whereas the NQR spectra itself reflects the degree of local disorder via the width of the individual NQR lines, the spin lattice relaxation rate (SLRR) 1 /T1(T ) probes the fluctuations at the Sb site. The fluctuations originate either from conduction electrons or from magnetic moments. In contrast to the semimetal FeSb2 with a clear signature of the charge and spin gap formation in 1 /T1(T ) T [˜exp/(Δ kBT ) ] , the 1% Te-doped system exhibits almost metallic conductivity and the SLRR nicely confirms that the gap is almost filled. A weak divergence of the SLRR coefficient 1 /T1(T ) T ˜T-n˜T-0.2 points towards the presence of electronic correlations towards low temperatures. This is supported by the electronic specific heat coefficient γ =(Cel/T ) showing a power-law divergence γ (T ) ˜T-m˜(1/T1T ) 1 /2˜T-n /2˜Cel/T which is expected in the renormalized Landau Fermi liquid theory for correlated electrons. In contrast to that the 5% Te-doped sample exhibits a much larger divergence in the SLRR coefficient showing 1 /T1(T ) T ˜T-0.72 . According to the specific heat divergence a power law with n =2 m =0.56 is expected for the SLRR. This dissimilarity originates from admixed critical magnetic fluctuations in the vicinity of antiferromagnetic long range order with 1 /T1(T ) T ˜T-3 /4 behavior. Furthermore Te-doped FeSb2 as a disordered paramagnetic metal might be a platform for the electronic Griffith phase scenario. NQR evidences a substantial asymmetric broadening of the Sb,123121 NQR spectrum for the 5% sample. This has a predominant electronic origin in agreement with the electronic Griffith phase and stems probably from an enhanced Sb-Te bond polarization and electronic density shift towards the Te atom inside Sb

NG2 proteoglycan increases mesangial cell proliferation and extracellular matrix production

International Nuclear Information System (INIS)

Xiong Jing; Wang Yang; Zhu, Zhonghua; Liu Jianshe; Wang Yumei; Zhang Chun; Hammes, Hans-Peter; Lang, Florian; Feng Yuxi

2007-01-01

As a membrane-spanning protein, NG2 chondroitin sulfate proteoglycan interacts with molecules on both sides of plasma membrane. The present study explored the role of NG2 in the pathogenesis of diabetic nephropathy. In the normal kidneys, NG2 was observed predominantly in glomerular mesangium, Bowman's capsule and interstitial vessels. Both mRNA and protein expression in kidneys was significantly higher in strepozotocin-induced diabetic rats than that in normal rats. In the cultured rat mesangial cell line HBZY-1, overexpression of NG2 promoted mesangial cell proliferation and extracellular matrix (ECM) production, such as type VI collagen and laminin. Furthermore, target knockdown of NG2 resulted in decreased cell proliferation and ECM formation. The observations suggest that NG2 is up-regulated in diabetic nephropathy. It actively participates in the development and progression of glomerulosclerosis by stimulating proliferation of mesangial cells and deposition of ECM

In situ study of the formation kinetics of InSb quantum dots grown in an InAs(Sb) matrix

International Nuclear Information System (INIS)

Semenov, A. N.; Lyublinskaya, O. G.; Solov’ev, V. A.; Mel’tser, B. Ya.; Ivanov, S. V.

2008-01-01

Formation of InSb quantum dots grown in an InAs matrix by molecular-beam epitaxy that does not involve forced deposition of InSb is studied. Detection of intensity oscillations in the reflection of high-energy electron diffraction patterns was used to study in situ the kinetics of the formation of InSb quantum dots and an InAsSb wetting layer. The effects of the substrate temperature, the shutter operation sequence, and the introduction of growth interruptions on the properties of the array of InSb quantum dots are examined. Introduction of a growth interruption immediately after completing the exposure of the InAs surface to the antimony flux leads to a reduction in the nominal thickness of InSb and to an enhancement in the uniformity of the quantum-dot array. It is shown that, in the case of deposition of submonolayer-thickness InSb/InAs quantum dots, the segregation layer of InAsSb plays the role of the wetting layer. The Sb segregation length and segregation ratio, as well as their temperature dependences, are determined.

Antagonistic activity of Bacillus subtilis SB1 and its biocontrol effect on tomato bacterial wilt

Science.gov (United States)

A potential biocontrol agent of bacterial wilt, Bacillus subtilis SB1, isolated from tomato roots, showed a broad-spectrum of antimicrobial activity in in vitro experiments. It inhibited the growth of many plant pathogens, including Ralstonia solanacearum, Xanthomonas oryzae pv. oryzae, Fusarium ox...

Positron annihilation studies of high dose Sb implanted silicon

International Nuclear Information System (INIS)

Schut, H.; Eijt, S.W.H.; Beling, C.D.; Ho, K.; Takamura, Y.

2005-01-01

The formation and evolution of vacancies and precipitates created by implantation of 60 keV, 2 x 10 16 cm -2 Sb + in pre-amorphized (0 0 1) Cz-Si is studied using the Doppler broadening (DB) and two-dimensional angular correlation of annihilation radiation (2D-ACAR) positron beam techniques. After implantation, samples were laser annealed (LTA) and subsequently thermal annealed at temperatures ranging from 400 to 1000 deg. C. Implantation-induced vacancy-type defects were detected up to a depth of 280 nm. After LTA, positron annihilation related to both Sb and remaining defects is observed in the first 100 nm below the surface. The deeper region only shows positron trapping at vacancy-type defects with strong reduced concentration. Complete removal is obtained after 600 deg. C anneal. At this temperature, the positron data for the upper region reveals trapping at Sb and Si sites only. With increasing annealing time (at 600 deg. C) or increasing temperature (up to 1000 deg. C) positron annihilation at Sb-sites associated with neighboring vacancies becomes apparent. Results are correlated with the observed Sb electrical deactivation above 600 deg. C, the shift from small Sb aggregates to precipitates and out-diffusion of Sb from the implantation region at higher temperatures

Calculations with THYDE-B1 for the test PO-SB-7 in PIPER-1, Pisa, Italy

International Nuclear Information System (INIS)

Sonneck, G.; Pfau, H.

1988-01-01

The test PO-SB-7 from the BWR test facility PIPER-1 in Pisa, Italy, was chosen as the International Standart Problem (ISP) 21 by CSNI, OECD. The Department for Energy and Engineering is participating in this exercise. This report describes the input and the calculations using the Japanese code THYDE-B1. As the experiment has not yet been run the results can only be compared to counterpart test in USA and Japan. They seem to be reasonable. Additionally THYDE-B1 proves to have advantages over similar codes. 10 refs., 8 figs., 4 tabs. (Author)

Counter-current acid leaching process for the removal of Cu, Pb, Sb and Zn from shooting range soil.

Science.gov (United States)

Lafond, Stéphanie; Blais, Jean-François; Mercier, Guy; Martel, Richard

2013-01-01

This research explores the performance of a counter-current leaching process (CCLP) for Cu, Pb, Sb and Zn extraction in a polluted shooting range soil. The initial metal concentrations in the soil were 1790 mg Cu/kg, 48,300 mg Pb/kg, 840 mg Sb/kg and 368 mg Zn/kg. The leaching process consisted of five one-hour acid leaching steps, which used 1 M H2SO4 + 4 M NaCl (20 degrees C, soil suspension = 100 g/L) followed by two water rinsing steps. Ten counter-current remediation cycles were completed and the average metal removal yields were 98.3 +/- 0.3% of Cu, 99.5 +/- 0.1% of Pb, 75.5 +/- 5.1% of Sb and 29.1 +/- 27.2% of Zn. The quality of metal leaching did not deteriorate throughout the 10 remediation cycles completed for this study. The CCLP reduced acid and salt use by approximately 68% and reduced water consumption by approximately 60%, exceeding reductions achieved by a standard acid leaching process.

Magnetic structure of the YbMn2SbBi compound

International Nuclear Information System (INIS)

Morozkin, A.V.; Manfrinetti, P.

2011-01-01

Graphical abstract: Display Omitted Research highlights: → A neutron diffraction investigation in zero applied field of La 2 O 2 S-type YbMn 2 SbBi shows antiferromagnetic ordering below 138(3) K and ferrimagnetic ordering below 112(3) K. → Between 138 and 112 K, the magnetic structure of YbMn 2 SbBi consists of antiferromagnetically coupled ab-plane magnetic moments of the manganese atoms (D 1d magnetic point group). → Below 112(3) K, the magnetic structure of YbMn 2 SbBi becames the sum antiferromagnetic component with D 1d magnetic point group and ferromagnetic one with C 2 magnetic point group. → The magnitude of Yb and Mn magnetic moments in YbMn 2 SbBi at 2 K (M Yb = 3.6(2) μ B , M Mn = 3.5(2) μ B ) correspond to the trivalent state of the Yb ions and tetravalent state of the Mn ions. - Abstract: A neutron diffraction investigation has been carried out on the trigonal La 2 O 2 S-type (hP5, space group P3-bar ml, No. 164; also CaAl 2 Si 2 -type) YbMn 2 SbBi intermetallic compound. The YbMn 2 SbBi presents antiferromagnetic ordering below 138(3) K and ferrimagnetic ordering below 112(3) K. Between 138 and 112 K, the magnetic structure of YbMn 2 SbBi consists of antiferromagnetically coupled ab-plane magnetic moments of the manganese atoms (D 1d magnetic point group). Below 112(3) K, the ferromagnetic components of Yb and Mn begin to develop, and the magnetic structure of YbMn 2 SbBi becames the sum antiferromagnetic component with D 1d magnetic point group and ferromagnetic one with C 2 magnetic point group. The magnitude of Yb and Mn magnetic moments in YbMn 2 SbBi at 2 K (M Yb = 3.6(2) μ B , M Mn = 3.5(2) μ B ) correspond to the trivalent state of the Yb ions and tetravalent state of the Mn ions.

Influence of nanoinclusions on scattering of holes and phonons and transport coefficients in BixSb1−xTe3 bulk nanostructures

International Nuclear Information System (INIS)

Bulat, Lev P.; Osvenskii, Vladimir B.; Parkhomenko, Yurii N.; Pshenay-Severin, Dmitry A.

2012-01-01

One of the possible ways to increase the thermoelectric figure of merit is the use of bulk nanostructured materials fabricated by melt spinning with subsequent hot pressing or spark plasma sintering. Among a variety of nanostructure types these materials contain regions of initial solid solution with nanometer sized inclusions of different compositions. In the present work the scattering of holes and phonons on nanoinclusions in such p-Bi x Sb 1−x Te 3 based materials is considered. The change of transport coefficients due to this scattering mechanism is theoretically estimated. The estimations showed that the reduction of lattice thermal conductivity (about 12–13%) for nanoinclusions of Bi 2 Te 3 –Sb 2 Te 3 solid solution with different compositions is much greater than the change in power factor. Therefore the corresponding increase of the thermoelectric figure of merit for this case is determined mainly by phonon scattering. Also it is shown that the results of estimations depend on phonon spectrum approximation, e.g. in the case of sine-shaped instead of linear phonon spectrum the estimations give two times higher thermal conductivity reduction. - Graphical abstract: Relative phonon thermal conductivity κ ph change (black line) due to nanoinclusion scattering versus nanoinclusion radius a, and relative thermoelectric power factor change (red line) due to nanoinclusion scattering versus chemical potential μ at nanoinclusion size a=1.5 nm and U 0 =−0.146 eV. Highlights: ► p-Bi x Sb 1−x Te 3 solid solutions with nanosized inclusions were considered. ► Selective hole scattering can increase power factor at high carrier concentrations. ► Lattice thermal conductivity estimations depend on phonon spectrum approximation. ► Phonon scattering can reduce lattice thermal conductivity by about 12–13%. ► The latter factor mainly determines the increase of thermoelectric efficiency.

Interfacial intermixing in InAs/GaSb short-period-superlattices grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Luna, E.; Satpati, B.; Trampert, A.; Rodriguez, J. B.; Baranov, A. N.; Tournie, E.

2010-01-01

The unique properties of the noncommon-atom InAs/GaSb short-period-superlattices (SPSL) strongly depend on the interface structure. These interfaces are characterized using transmission electron microscopy (TEM). The compositional sharpness is obtained from the comparison of the experimental contrast in g 002 two-beam dark-field TEM images with simulated intensity profiles, which are calculated assuming that the element distribution profiles are described by sigmoidal functions. The interfacial intermixing, defined by the chemical width, is obtained for SPSL with different periods and layer thicknesses, even in the extreme case of nominally less than 3 ML thick InAs layers. Nominal 1 ML InSb layers intentionally inserted are also identified.

N Güngör

Indian Academy of Sciences (India)

Home; Journals; Bulletin of Materials Science. N Güngör. Articles written in Bulletin of Materials Science. Volume 27 Issue 3 June 2004 pp 317-322 Surfactants. Effect of sodium dodecyl sulfate on flow and electrokinetic properties of Na-activated bentonite dispersions · E Günıster S İşçı A Alemdar N Güngör · More Details ...

The Cu-Sb-Se phase system at temperatures between 350 and 700 degree C

DEFF Research Database (Denmark)

Karup-Møller, Sven

1999-01-01

Phase relations were determined in the Cu-Sb-Se phase system at 300o, 400o, 450o, 500o, 600o and 700oC. Five three-component phases are present at 300oC: permingeatite (Cu3SbSe4), phase A (Cu3SbSe3, the Se-equivalent to skinnerite Cu3SbS3), phase B (CuSbSe2, the Se-equivalent to chalcostibite Cu......SbS2), phase C (Cu5.04Sb35.9Se59.1) and phase D (Cu38.8Sb6.10Se55.1). An X-ray crystallographic study is currently in progress on phase C. Phase D is present in insufficient amounts for such a study. At 400oC phase C and D does not exist and at 500oC all solid ternary phase are absent. At 450oC two...

Quantum spin Hall effect and topological phase transition in InN x Bi y Sb1-x-y /InSb quantum wells

Science.gov (United States)

Song, Zhigang; Bose, Sumanta; Fan, Weijun; Zhang, Dao Hua; Zhang, Yan Yang; Shen Li, Shu

2017-07-01

Quantum spin Hall (QSH) effect, a fundamentally new quantum state of matter and topological phase transitions are characteristics of a kind of electronic material, popularly referred to as topological insulators (TIs). TIs are similar to ordinary insulator in terms of their bulk bandgap, but have gapless conducting edge-states that are topologically protected. These edge-states are facilitated by the time-reversal symmetry and they are robust against nonmagnetic impurity scattering. Recently, the quest for new materials exhibiting non-trivial topological state of matter has been of great research interest, as TIs find applications in new electronics and spintronics and quantum-computing devices. Here, we propose and demonstrate as a proof-of-concept that QSH effect and topological phase transitions can be realized in {{InN}}x{{Bi}}y{{Sb}}1-x-y/InSb semiconductor quantum wells (QWs). The simultaneous incorporation of nitrogen and bismuth in InSb is instrumental in lowering the bandgap, while inducing opposite kinds of strain to attain a near-lattice-matching conducive for lattice growth. Phase diagram for bandgap shows that as we increase the QW thickness, at a critical thickness, the electronic bandstructure switches from a normal to an inverted type. We confirm that such transition are topological phase transitions between a traditional insulator and a TI exhibiting QSH effect—by demonstrating the topologically protected edge-states using the bandstructure, edge-localized distribution of the wavefunctions and edge-state spin-momentum locking phenomenon, presence of non-zero conductance in spite of the Fermi energy lying in the bandgap window, crossover points of Landau levels in the zero-mode indicating topological band inversion in the absence of any magnetic field and presence of large Rashba spin-splitting, which is essential for spin-manipulation in TIs.

Nonpeptidic urotensin-II receptor antagonists I: in vitro pharmacological characterization of SB-706375

Science.gov (United States)

Douglas, Stephen A; Behm, David J; Aiyar, Nambi V; Naselsky, Diane; Disa, Jyoti; Brooks, David P; Ohlstein, Eliot H; Gleason, John G; Sarau, Henry M; Foley, James J; Buckley, Peter T; Schmidt, Dulcie B; Wixted, William E; Widdowson, Katherine; Riley, Graham; Jin, Jian; Gallagher, Timothy F; Schmidt, Stanley J; Ridgers, Lance; Christmann, Lisa T; Keenan, Richard M; Knight, Steven D; Dhanak, Dashyant

2005-01-01

SB-706375 potently inhibited [125I]hU-II binding to both mammalian recombinant and ‘native' UT receptors (Ki 4.7±1.5 to 20.7±3.6 nM at rodent, feline and primate recombinant UT receptors and Ki 5.4±0.4 nM at the endogenous UT receptor in SJRH30 cells). Prior exposure to SB-706375 (1 μM, 30 min) did not alter [125I]hU-II binding affinity or density in recombinant cells (KD 3.1±0.4 vs 5.8±0.9 nM and Bmax 3.1±1.0 vs 2.8±0.8 pmol mg−1) consistent with a reversible mode of action. The novel, nonpeptidic radioligand [3H]SB-657510, a close analogue of SB-706375, bound to the monkey UT receptor (KD 2.6±0.4 nM, Bmax 0.86±0.12 pmol mg−1) in a manner that was inhibited by both U-II isopeptides and SB-706375 (Ki 4.6±1.4 to 17.6±5.4 nM) consistent with the sulphonamides and native U-II ligands sharing a common UT receptor binding domain. SB-706375 was a potent, competitive hU-II antagonist across species with pKb 7.29–8.00 in HEK293-UT receptor cells (inhibition of [Ca2+]i-mobilization) and pKb 7.47 in rat isolated aorta (inhibition of contraction). SB-706375 also reversed tone established in the rat aorta by prior exposure to hU-II (Kapp∼20 nM). SB-706375 was a selective U-II antagonist with ⩾100-fold selectivity for the human UT receptor compared to 86 distinct receptors, ion channels, enzymes, transporters and nuclear hormones (Ki/IC50>1 μM). Accordingly, the contractile responses induced in isolated aortae by KCl, phenylephrine, angiotensin II and endothelin-1 were unaltered by SB-706375 (1 μM). In summary, SB-706375 is a high-affinity, surmountable, reversible and selective nonpeptide UT receptor antagonist with cross-species activity that will assist in delineating the pathophysiological actions of U-II in mammals. PMID:15852036

Fermi-level tuning of the Dirac surface state in (Bi1-x Sb x )2Se3 thin films

Science.gov (United States)

Satake, Yosuke; Shiogai, Junichi; Takane, Daichi; Yamada, Keiko; Fujiwara, Kohei; Souma, Seigo; Sato, Takafumi; Takahashi, Takashi; Tsukazaki, Atsushi

2018-02-01

We report on the electronic states and the transport properties of three-dimensional topological insulator (Bi1-x Sb x )2Se3 ternary alloy thin films grown on an isostructural Bi2Se3 buffer layer on InP substrates. By angle-resolved photoemission spectroscopy, we clearly detected Dirac surface states with a large bulk band gap of 0.2-0.3 eV in the (Bi1-x Sb x )2Se3 film with x  =  0.70. In addition, we observed by Hall effect measurements that the dominant charge carrier converts from electron (n-type) to hole (p-type) at around x  =  0.7, indicating that the Fermi level can be controlled across the Dirac point. Indeed, the carrier transport was shown to be governed by Dirac surface state in 0.63  ⩽  x  ⩽  0.75. These features suggest that Fermi-level tunable (Bi1-x Sb x )2Se3-based heterostructures provide a platform for extracting exotic topological phenomena.

Sb interactions with TaC precipitates and Cu in ion-implanted α-Fe

International Nuclear Information System (INIS)

Follstaedt, D.M.; Myers, S.M.

1980-01-01

The interactions of Sb with the other species implanted into Fe to form Fe-Ta-C-Sb and Fe-Cu-Sb alloys have been examined with transmission electron microscopy and Rutherford backscattering following annealing at 873 0 K. Trapping of Sb at TaC precipitates is observed in the former alloy just as was previously observed in Fe-Ti-C-Sb. In Fe-Cu-Sb, Sb interactions are governed by the atomic ratio of Sb to Cu. For ratios between 0.2 to 0.4, the compound β-Cu 3 Sb was observed to form. For Sb to Cu ratios approx.< 0.1, fcc Cu precipitates were observed. In addition to the expected Sb dissolution in Cu, Sb trapping by Cu precipitates is also observed. The binding enthalpy of Sb at both TaC and Cu precipitates with respect to a solution site in the bcc Fe is the same as observed for TiC, approx. 0.4 eV. The constancy of the binding enthalpy at such chemically dissimilar precipitates supports the hypothesis that the trapping is due to the structural discontinuity of the precipitate-host interface. The observed Sb trapping at precipitates is of potential significance for the control of temper embrittlement in bcc steels

Three dimensional atom probe imaging of GaAsSb quantum rings.

Science.gov (United States)

Beltrán, A M; Marquis, E A; Taboada, A G; Ripalda, J M; García, J M; Molina, S I

2011-07-01

Unambiguous evidence of ring-shaped self-assembled GaSb nanostructures grown by molecular beam epitaxy is presented on the basis of atom-probe tomography reconstructions and dark field transmission electron microscopy imaging. The GaAs capping process causes a strong segregation of Sb out of the center of GaSb quantum dots, leading to the self-assembled GaAs(x)Sb(1-x) quantum rings of 20-30 nm in diameter with x ∼ 0.33. Copyright © 2011 Elsevier B.V. All rights reserved.

Effect of antimony nano-scale surface-structures on a GaSb/AlAsSb distributed Bragg reflector

International Nuclear Information System (INIS)

Husaini, S.; Shima, D.; Ahirwar, P.; Rotter, T. J.; Hains, C. P.; Dang, T.; Bedford, R. G.; Balakrishnan, G.

2013-01-01

Effects of antimony crystallization on the surface of GaSb during low temperature molecular beam epitaxy growth are investigated. The geometry of these structures is studied via transmission electron and atomic force microscopies, which show the surface metal forms triangular-shaped, elongated nano-wires with a structured orientation composed entirely of crystalline antimony. By depositing antimony on a GaSb/AlAsSb distributed Bragg reflector, the field is localized within the antimony layer. Polarization dependent transmission measurements are carried out on these nano-structures deposited on a GaSb/AlAsSb distributed Bragg reflector. It is shown that the antimony-based structures at the surface favor transmission of light polarized perpendicular to the wires.

InAsSb for IR detection at 12 μm

International Nuclear Information System (INIS)

Dawson, L.R.

1989-01-01

The authors report the molecular beam epitaxial (MBE) growth of InAsSb alloys and superlattices on InSb substrates with intervening buffer layers designed to provide a lattice match to the SLS. Efficient incorporation of As is achieved by using an As 2 (thermally cracked) source in conjunction with an Sb 2 source at growth temperature of 425-450 0 C. At these temperatures desorption of excess Sb from the surface is limited and careful control of the Sb:In ratio is required. Even though the growth temperature is quite near the melting point of the alloys involved (525-550 0 C), TEM reveals abrupt, planar interfaces in superlattices with layer thicknesses less than 150 A. Undoped InSb layers are very pure, with n(77K) -- 1 x 10 14 cm -3 and μ(77K) --280,000 cm 2 V -1 sec -1 . Doping is easily controlled up to -- 10 18 using Be and PbSe. The entire structure (buffer plus SLS) is in tension with respect to the parent substrate, leading to extensive cracking for conventional buffer layers. More complex buffers, designed to more effectively relax the material to its equilibrium lattice constant, are used to solve this cracking problem. InAsSb SLSs grown on such buffer layers are crack-free and show marked reduction in dislocation density relative to that of the buffer layer. FTIR measurements made on SLSs with different compositions and differing amounts of strain in the active regions show optical absorption that is strain-shifted to wavelengths beyond λ c for bulk alloys, with substantial absorption beyond 12 μm

Impact of Nb vacancies and p-type doping of the NbCoSn-NbCoSb half-Heusler thermoelectrics.

Science.gov (United States)

Ferluccio, Daniella A; Smith, Ronald I; Buckman, Jim; Bos, Jan-Willem G

2018-02-07

The half-Heuslers NbCoSn and NbCoSb have promising thermoelectric properties. Here, an investigation of the NbCo 1+y Sn 1-z Sb z (y = 0, 0.05; 0 ≤ z ≤ 1) solid-solution is presented. In addition, the p-type doping of NbCoSn using Ti and Zr substitution is investigated. Rietveld analysis reveals the gradual creation of Nb vacancies to compensate for the n-type doping caused by the substitution of Sb in NbCoSn. This leads to a similar valence electron count (∼18.25) for the NbCo 1+y Sn 1-z Sb z samples (z > 0). Mass fluctuation disorder due to the Nb vacancies strongly decreases the lattice thermal conductivity from 10 W m -1 K -1 (z = 0) to 4.5 W m -1 K -1 (z = 0.5, 1). This is accompanied by a transition to degenerate semiconducting behaviour leading to large power factors, S 2 /ρ = 2.5-3 mW m -1 K -2 and figures of merit, ZT = 0.25-0.33 at 773 K. Ti and Zr can be used to achieve positive Seebeck values, e.g. S = +150 μV K -1 for 20% Zr at 773 K. However, the electrical resistivity, ρ 323K = 27-35 mΩ cm, remains too large for these materials to be considered useful p-type materials.