Propriété de soi et indifférence morale du rapport à soi

Directory of Open Access Journals (Sweden)

Nathalie Maillard Romagnoli

2011-05-01

Full Text Available Je m’interroge dans cet article sur les implications du principe libertarien de la pleine propriété de soi sur la question du rapport moral à soi-même. À travers le principe de la pleine propriété de soi, les libertariens défendent la liberté entière de chacun de vivre comme il l���entend, pourvu que les droits des autres soient respectés. Apparemment, ce principe n’a pas grand-chose à nous dire sur ce que nous sommes moralement autorisés à nous faire à nous-mêmes ou non. Certains libertariens, comme Vallentyne, soutiennent toutefois que le principe de la pleine propriété de soi est incompatible avec l’existence de devoirs envers soi. La pleine propriété de soi impliquerait l’indifférence morale du rapport à soi. Je soutiens dans cet article que le principe de la pleine propriété de soi n’implique pas que ce que nous nous faisons à nous-mêmes soit moralement indifférent. Je veux aussi montrer que même si les libertariens, et en particulier Vallentyne, soutiennent la thèse de l’indifférence morale du rapport à soi, celle-ci n’est pas liée à la thèse de la pleine propriété de soi, mais bien plutôt à leur subjectivisme moral.ABSTRACTI ask in this article what the libertarian principle of full self-ownership has to say about volontary actions directed towards oneself. Through the principle of full self-ownership, libertarians defend the persons’ individual liberty to live as they choose to do, as long as they don’t infringe on the rights of others. Apparently, this principle doesn’t have much to say about what we are morally allowed to do to ourselves or not. Some libertarians, however, like Vallentyne, maintain that, if we have duties or obligations to ourselves, then we cannot be full self-owner. In this perspective, full self-ownership would imply that what we do to ourselves is morally indifferent. I want to show in this article that full self-ownership is compatible with the

Structural makeup, biopolymer conformation, and biodegradation characteristics of a newly developed super genotype of oats (CDC SO-I versus conventional varieties): a novel approach.

Science.gov (United States)

Damiran, Daalkhaijav; Yu, Peiqiang

2010-02-24

Recently, a new "super" genotype of oats (CDC SO-I or SO-I) has been developed. The objectives of this study were to determine structural makeup (features) of oat grain in endosperm and pericarp regions and to reveal and identify differences in protein amide I and II and carbohydrate structural makeup (conformation) between SO-I and two conventional oats (CDC Dancer and Derby) grown in western Canada in 2006, using advanced synchrotron radiation based Fourier transform infrared microspectroscopy (SRFTIRM). The SRFTIRM experiments were conducted at National Synchrotron Light Sources, Brookhaven National Laboratory (NSLS, BNL, U.S. Department of Energy). From the results, it was observed that comparison between the new genotype oats and conventional oats showed (1) differences in basic chemical and protein subfraction profiles and energy values with the new SO-I oats containing lower lignin (21 g/kg of DM) and higher soluble crude protein (530 g/kg CP), crude fat (59 g/kg of DM), and energy values (TDN, 820 g/kg of DM; NE(L3x), 7.8 MJ/kg of DM); (2) significant differences in rumen biodegradation kinetics of dry matter, starch, and protein with the new SO-I oats containing lower EDDM (638 g/kg of DM) and higher EDCP (103 g/kg of DM); (3) significant differences in nutrient supply with highest truly absorbed rumen undegraded protein (ARUP, 23 g/kg of DM) and total metabolizable protein supply (MP, 81 g/kg of DM) from the new SO-I oats; and (4) significant differences in structural makeup in terms of protein amide I in the endosperm region (with amide I peak height from 0.13 to 0.22 IR absorbance unit) and cellulosic compounds to carbohydrate ratio in the pericarp region (ratio from 0.02 to 0.06). The results suggest that with the SRFTIRM technique, the structural makeup differences between the new genotype oats (SO-I) and two conventional oats (Dancer and Derby) could be revealed.

The overlapped radial basis function-finite difference (RBF-FD) method: A generalization of RBF-FD

Science.gov (United States)

Shankar, Varun

2017-08-01

We present a generalization of the RBF-FD method that computes RBF-FD weights in finite-sized neighborhoods around the centers of RBF-FD stencils by introducing an overlap parameter δ ∈ (0 , 1 ] such that δ = 1 recovers the standard RBF-FD method and δ = 0 results in a full decoupling of stencils. We provide experimental evidence to support this generalization, and develop an automatic stabilization procedure based on local Lebesgue functions for the stable selection of stencil weights over a wide range of δ values. We provide an a priori estimate for the speedup of our method over RBF-FD that serves as a good predictor for the true speedup. We apply our method to parabolic partial differential equations with time-dependent inhomogeneous boundary conditions - Neumann in 2D, and Dirichlet in 3D. Our results show that our method can achieve as high as a 60× speedup in 3D over existing RBF-FD methods in the task of forming differentiation matrices.

Method to improve commercial bonded SOI material

Science.gov (United States)

Maris, Humphrey John; Sadana, Devendra Kumar

2000-07-11

A method of improving the bonding characteristics of a previously bonded silicon on insulator (SOI) structure is provided. The improvement in the bonding characteristics is achieved in the present invention by, optionally, forming an oxide cap layer on the silicon surface of the bonded SOI structure and then annealing either the uncapped or oxide capped structure in a slightly oxidizing ambient at temperatures greater than 1200.degree. C. Also provided herein is a method for detecting the bonding characteristics of previously bonded SOI structures. According to this aspect of the present invention, a pico-second laser pulse technique is employed to determine the bonding imperfections of previously bonded SOI structures.

Emerging pharmacological therapy for functional dyspepsia.

Science.gov (United States)

Hojo, Mariko; Nagahara, Akihito; Asaoka, Daisuke; Watanabe, Sumio

2013-10-01

Functional dyspepsia (FD) is a multifactorial disease with complex underlying pathophysiology. To date, there is no established treatment for FD. This review summarizes recent progress in pharmacological therapy for the disease. A newly developed drug, acotiamide, is expected to improve symptoms of postprandial distress syndrome. Herbal medicines are also expected to become options for FD treatment.

Performance analysis of SOI MOSFET with rectangular recessed channel

Science.gov (United States)

Singh, M.; Mishra, S.; Mohanty, S. S.; Mishra, G. P.

2016-03-01

In this paper a two dimensional (2D) rectangular recessed channel-silicon on insulator metal oxide semiconductor field effect transistor (RRC-SOI MOSFET), using the concept of groove between source and drain regions, which is one of the channel engineering technique to suppress the short channel effect (SCE). This suppression is mainly due to corner potential barrier of the groove and the simulation is carried out by using ATLAS 2D device simulator. To have further improvement of SCE in RRC-SOI MOSFET, three more devices are designed by using dual material gate (DMG) and gate dielectric technique, which results in formation of devices i.e. DMRRC-SOI,MLSMRRC-SOI, MLDMRRC-SOI MOSFET. The effect of different structures of RRC-SOI on AC and RF parameters are investigated and the importance of these devices over RRC MOSFET regarding short channel effect is analyzed.

Performance analysis of SOI MOSFET with rectangular recessed channel

International Nuclear Information System (INIS)

Singh, M; Mishra, G P; Mishra, S; Mohanty, S S

2016-01-01

In this paper a two dimensional (2D) rectangular recessed channel–silicon on insulator metal oxide semiconductor field effect transistor (RRC-SOI MOSFET), using the concept of groove between source and drain regions, which is one of the channel engineering technique to suppress the short channel effect (SCE). This suppression is mainly due to corner potential barrier of the groove and the simulation is carried out by using ATLAS 2D device simulator. To have further improvement of SCE in RRC-SOI MOSFET, three more devices are designed by using dual material gate (DMG) and gate dielectric technique, which results in formation of devices i.e. DMRRC-SOI,MLSMRRC-SOI, MLDMRRC-SOI MOSFET. The effect of different structures of RRC-SOI on AC and RF parameters are investigated and the importance of these devices over RRC MOSFET regarding short channel effect is analyzed. (paper)

BUSFET -- A radiation-hardened SOI transistor

International Nuclear Information System (INIS)

Schwank, J.R.; Shaneyfelt, M.R.; Draper, B.L.; Dodd, P.E.

1999-01-01

The total-dose hardness of SOI technology is limited by radiation-induced charge trapping in gate, field, and SOI buried oxides. Charge trapping in the buried oxide can lead to back-channel leakage and makes hardening SOI transistors more challenging than hardening bulk-silicon transistors. Two avenues for hardening the back-channel are (1) to use specially prepared SOI buried oxides that reduce the net amount of trapped positive charge or (2) to design transistors that are less sensitive to the effects of trapped charge in the buried oxide. In this work, the authors propose a partially-depleted SOI transistor structure for mitigating the effects of trapped charge in the buried oxide on radiation hardness. They call this structure the BUSFET--Body Under Source FET. The BUSFET utilizes a shallow source and a deep drain. As a result, the silicon depletion region at the back channel caused by radiation-induced charge trapping in the buried oxide does not form a conducting path between source and drain. Thus, the BUSFET structure design can significantly reduce radiation-induced back-channel leakage without using specially prepared buried oxides. Total dose hardness is achieved without degrading the intrinsic SEU or dose rate hardness of SOI technology. The effectiveness of the BUSFET structure for reducing total-dose back-channel leakage depends on several variables, including the top silicon film thickness and doping concentration, and the depth of the source. 3-D simulations show that for a body doping concentration of 10 18 cm -3 , a drain bias of 3 V, and a source depth of 90 nm, a silicon film thickness of 180 nm is sufficient to almost completely eliminate radiation-induced back-channel leakage. However, for a doping concentration of 3 x 10 17 cm -3 , a thicker silicon film (300 nm) must be used

BUSFET - A Novel Radiation-Hardened SOI Transistor

International Nuclear Information System (INIS)

Dodd, P.E.; Draper, B.L.; Schwank, J.R.; Shaneyfelt, M.R.

1999-01-01

A partially-depleted SOI transistor structure has been designed that does not require the use of specially-processed hardened buried oxides for total-dose hardness and maintains the intrinsic SEU and dose rate hardness advantages of SOI technology

Flat-detector computed tomography (FD-CT)

International Nuclear Information System (INIS)

Kalender, Willi A.; Kyriakou, Yiannis

2007-01-01

Flat-panel detectors or, synonymously, flat detectors (FDs) have been developed for use in radiography and fluoroscopy with the defined goal to replace standard X-ray film, film-screen combinations and image intensifiers by an advanced sensor system. FD technology in comparison to X-ray film and image intensifiers offers higher dynamic range, dose reduction, fast digital readout and the possibility for dynamic acquisitions of image series, yet keeping to a compact design. It appeared logical to employ FD designs also for computed tomography (CT) imaging. Respective efforts date back a few years only, but FD-CT has meanwhile become widely accepted for interventional and intra-operative imaging using C-arm systems. FD-CT provides a very efficient way of combining two-dimensional (2D) radiographic or fluoroscopic and 3D CT imaging. In addition, FD technology made its way into a number of dedicated CT scanner developments, such as scanners for the maxillo-facial region or for micro-CT applications. This review focuses on technical and performance issues of FD technology and its full range of applications for CT imaging. A comparison with standard clinical CT is of primary interest. It reveals that FD-CT provides higher spatial resolution, but encompasses a number of disadvantages, such as lower dose efficiency, smaller field of view and lower temporal resolution. FD-CT is not aimed at challenging standard clinical CT as regards to the typical diagnostic examinations; but it has already proven unique for a number of dedicated CT applications, offering distinct practical advantages, above all the availability of immediate CT imaging in the interventional suite or the operating room. (orig.)

Automotive SOI-BCD Technology Using Bonded Wafers

International Nuclear Information System (INIS)

Himi, H.; Fujino, S.

2008-01-01

The SOI-BCD device is excelling in high temperature operation and noise immunity because the integrated elements can be electrically separated by dielectric isolation. We have promptly paid attention to this feature and have concentrated to develop SOI-BCD devices seeking to match the automotive requirement. In this paper, the feature technologies specialized for automotive SOI-BCD devices, such as buried N + layer for impurity gettering and noise shielding, LDMOS with improved ESD robustness, crystal defect-less process, and wafer direct bonding through the amorphous layer for intelligent power IC are introduced.

BUSFET - A Novel Radiation-Hardened SOI Transistor

International Nuclear Information System (INIS)

Schwank, J.R.; Shaneyfelt, M.R.; Draper, B.L.; Dodd, P.E.

1999-01-01

The total-dose hardness of SOI technology is limited by radiation-induced charge trapping in gate, field, and SOI buried oxides. Charge trapping in the buried oxide can lead to back-channel leakage and makes hardening SOI transistors more challenging than hardening bulk-silicon transistors. Two avenues for hardening the back-channel are (1) to use specially prepared SOI buried oxides that reduce the net amount of trapped positive charge or (2) to design transistors that are less sensitive to the effects of trapped charge in the buried oxide. In this work, we propose a new partially-depleted SOI transistor structure that we call the BUSFET--Body Under Source FET. The BUSFET utilizes a shallow source and a deep drain. As a result, the silicon depletion region at the back channel caused by radiation-induced charge trapping in the buried oxide does not form a conducting path between source and drain. Thus, the BUSFET structure design can significantly reduce radiation-induced back-channel leakage without using specially prepared buried oxides. Total dose hardness is achieved without degrading the intrinsic SEU and dose rate hardness of SOI technology. The effectiveness of the BUSFET structure for reducing total-dose back-channel leakage depends on several variables, including the top silicon film thickness and doping concentration and the depth of the source. 3-D simulations show that for a doping concentration of 10 18 cm -3 and a source depth of 90 nm, a silicon film thickness of 180 nm is sufficient to almost completely eliminate radiation-induced back-channel leakage. However, for a doping concentration of 3x10 17 cm -3 , a thicker silicon film (300 nm) must be used

Heterojunction fully depleted SOI-TFET with oxide/source overlap

Science.gov (United States)

Chander, Sweta; Bhowmick, B.; Baishya, S.

2015-10-01

In this work, a hetero-junction fully depleted (FD) Silicon-on-Insulator (SOI) Tunnel Field Effect Transistor (TFET) nanostructure with oxide overlap on the Germanium-source region is proposed. Investigations using Synopsys Technology Computer Aided Design (TCAD) simulation tools reveal that the simple oxide overlap on the Germanium-source region increases the tunneling area as well as the tunneling current without degrading the band-to-band tunneling (BTBT) and improves the device performance. More importantly, the improvement is independent of gate overlap. Simulation study shows improvement in ON current, subthreshold swing (SS), OFF current, ION/IOFF ration, threshold voltage and transconductance. The proposed device with hafnium oxide (HfO2)/Aluminium Nitride (AlN) stack dielectric material offers an average subthreshold swing of 22 mV/decade and high ION/IOFF ratio (∼1010) at VDS = 0.4 V. Compared to conventional TFET, the Miller capacitance of the device shows the enhanced performance. The impact of the drain voltage variation on different parameters such as threshold voltage, subthreshold swing, transconductance, and ION/IOFF ration are also found to be satisfactory. From fabrication point of view also it is easy to utilize the existing CMOS process flows to fabricate the proposed device.

Hemodynamic Changes Caused by Flow Diverters in Rabbit Aneurysm Models: Comparison of Virtual and Realistic FD Deployments Based on Micro-CT Reconstruction

Science.gov (United States)

Fang, Yibin; Yu, Ying; Cheng, Jiyong; Wang, Shengzhang; Wang, Kuizhong; Liu, Jian-Min; Huang, Qinghai

2013-01-01

Adjusting hemodynamics via flow diverter (FD) implantation is emerging as a novel method of treating cerebral aneurysms. However, most previous FD-related hemodynamic studies were based on virtual FD deployment, which may produce different hemodynamic outcomes than realistic (in vivo) FD deployment. We compared hemodynamics between virtual FD and realistic FD deployments in rabbit aneurysm models using computational fluid dynamics (CFD) simulations. FDs were implanted for aneurysms in 14 rabbits. Vascular models based on rabbit-specific angiograms were reconstructed for CFD studies. Real FD configurations were reconstructed based on micro-CT scans after sacrifice, while virtual FD configurations were constructed with SolidWorks software. Hemodynamic parameters before and after FD deployment were analyzed. According to the metal coverage (MC) of implanted FDs calculated based on micro-CT reconstruction, 14 rabbits were divided into two groups (A, MC >35%; B, MC 0.05). The normalized mean WSS in Group A after realistic FD implantation was significantly lower than that of Group B. All parameters in Group B exhibited no significant difference between realistic and virtual FDs. This study confirmed MC-correlated differences in hemodynamic parameters between realistic and virtual FD deployment. PMID:23823503

Le soi et l’estime de soi chez l’enfant: Une revue systématique de la littérature

OpenAIRE

Pinto, Alexandra Maria Pereira Inácio Sequeira; Gatinho, Ana Rita dos Santos; Tereno, Susana; Veríssimo, Manuela

2016-01-01

Cette étude vise : a) à analyser les différentes méthodes utilisées pour l’étude du Soi et chez les enfants, en ce que concerne sa qualité et son potentiel et b) à synthétiser les résultats déjà obtenus en termes de Soi/d’estime de soi/d’autoconcept, pour les enfants en âge préscolaire. Après avoir établi des critères rigoureux d’inclusion et d’exclusion, 33 articles ont été sélectionnés, dans plusieurs bases de données, nationales et international...

Ultrabroadband Hybrid III-V/SOI Grating Reflector for On-chip Lasers

DEFF Research Database (Denmark)

Park, Gyeong Cheol; Taghizadeh, Alireza; Chung, Il-Sug

2016-01-01

We report on a new type of III-V/SOI grating reflector with a broad stopband of 350 nm. This reflector has promising prospects for applications in high-speed III-V/SOI vertical cavity lasers with an improved heat dissipation capability.......We report on a new type of III-V/SOI grating reflector with a broad stopband of 350 nm. This reflector has promising prospects for applications in high-speed III-V/SOI vertical cavity lasers with an improved heat dissipation capability....

Monolithic integration of SOI waveguide photodetectors and transimpedance amplifiers

Science.gov (United States)

Li, Shuxia; Tarr, N. Garry; Ye, Winnie N.

2018-02-01

In the absence of commercial foundry technologies offering silicon-on-insulator (SOI) photonics combined with Complementary Metal Oxide Semiconductor (CMOS) transistors, monolithic integration of conventional electronics with SOI photonics is difficult. Here we explore the implementation of lateral bipolar junction transistors (LBJTs) and Junction Field Effect Transistors (JFETs) in a commercial SOI photonics technology lacking MOS devices but offering a variety of n- and p-type ion implants intended to provide waveguide modulators and photodetectors. The fabrication makes use of the commercial Institute of Microelectronics (IME) SOI photonics technology. Based on knowledge of device doping and geometry, simple compact LBJT and JFET device models are developed. These models are then used to design basic transimpedance amplifiers integrated with optical waveguides. The devices' experimental current-voltage characteristics results are reported.

Investigation of veritcal graded channel doping in nanoscale fully-depleted SOI-MOSFET

Science.gov (United States)

Ramezani, Zeinab; Orouji, Ali A.

2016-10-01

For achieving reliable transistor, we investigate an amended channel doping (ACD) engineering which improves the electrical and thermal performances of fully-depleted silicon-on-insulator (SOI) MOSFET. We have called the proposed structure with the amended channel doping engineering as ACD-SOI structure and compared it with a conventional fully-depleted SOI MOSFET (C-SOI) with uniform doping distribution using 2-D ATLAS simulator. The amended channel doping is a vertical graded doping that is distributed from the surface of structure with high doping density to the bottom of channel, near the buried oxide, with low doping density. Short channel effects (SCEs) and leakage current suppress due to high barrier height near the source region and electric field modification in the ACD-SOI in comparison with the C-SOI structure. Furthermore, by lower electric field and electron temperature near the drain region that is the place of hot carrier generation, we except the improvement of reliability and gate induced drain lowering (GIDL) in the proposed structure. Undesirable Self heating effect (SHE) that become a critical challenge for SOI MOSFETs is alleviated in the ACD-SOI structure because of utilizing low doping density near the buried oxide. Thus, refer to accessible results, the ACD-SOI structure with graded distribution in vertical direction is a reliable device especially in low power and high temperature applications.

Croire en soi, croire en l'autre

Directory of Open Access Journals (Sweden)

Eugène Enriquez

2014-04-01

Full Text Available La croyance aux Dieux ou en un Dieu unique c'est-à-dire à l'incroyable est fort répandue et semble normale comme avoir confiance en soi et en l'autre. Mais croire en soi et en l'autre apparaît étonnant car ce serait se mettre sur le même rang que Dieu. Effectivement l'homme essaie de ressembler à Dieu. Mais à Dieu blessé, faillible, s'interrogeant constamment. Ce Dieu nouveau est un "sujet amoureux" amoureux de soi, de l'autre et de la vie. Il se conduit comme un "Dichter" assumant une responsabilité morale. Il est difficile, voire souvent impossible de se situer comme un "Dichter". C'est pourtant la tâche à laquelle l'homme contemporain est confronté.

Characterizing SOI Wafers By Use Of AOTF-PHI

Science.gov (United States)

Cheng, Li-Jen; Li, Guann-Pyng; Zang, Deyu

1995-01-01

Developmental nondestructive method of characterizing layers of silicon-on-insulator (SOI) wafer involves combination of polarimetric hyperspectral imaging by use of acousto-optical tunable filters (AOTF-PHI) and computational resources for extracting pertinent data on SOI wafers from polarimetric hyperspectral images. Offers high spectral resolution and both ease and rapidity of optical-wavelength tuning. Further efforts to implement all of processing of polarimetric spectral image data in special-purpose hardware for sake of procesing speed. Enables characterization of SOI wafers in real time for online monitoring and adjustment of production. Also accelerates application of AOTF-PHI to other applications in which need for high-resolution spectral imaging, both with and without polarimetry.

A novel partial SOI LDMOSFET with periodic buried oxide for breakdown voltage and self heating effect enhancement

Science.gov (United States)

Jamali Mahabadi, S. E.; Rajabi, Saba; Loiacono, Julian

2015-09-01

In this paper a partial silicon on insulator (PSOI) lateral double diffused metal oxide semiconductor field effect transistor (LDMOSFET) with periodic buried oxide layer (PBO) for enhancing breakdown voltage (BV) and self-heating effects (SHEs) is proposed for the first time. This new structure is called periodic buried oxide partial silicon on insulator (PBO-PSOI). In this structure, periodic small pieces of SiO2 were used as the buried oxide (BOX) layer in PSOI to modulate the electric field in the structure. It was demonstrated that the electric field is distributed more evenly by producing additional electric field peaks, which decrease the common peaks near the drain and gate junctions in the PBO-PSOI structure. Hence, the area underneath the electric field curve increases which leads to higher breakdown voltage. Also a p-type Si window was introduced in the source side to force the substrate to share the vertical voltage drop, leading to a higher vertical BV. Furthermore, the Si window under the source and those between periodic pieces of SiO2 create parallel conduction paths between the active layer and substrate thereby alleviating the SHEs. Simulations with the two dimensional ATLAS device simulator from the Silvaco suite of simulation tools show that the BV of PBO-PSOI is 100% higher than that of the conventional partial SOI (C-PSOI) structure. Furthermore the PBO-PSOI structure alleviates SHEs to a greater extent than its C-PSOI counterpart. The achieved drain current for the PBO-PSOI structure (100 μA), at drain-source voltage of VDS = 100 V and gate-source voltage of VGS = 25 V, is shown to be significantly larger than that in C-PSOI and fully depleted SOI (FD-SOI) structures (87 μA and 51 μA respectively). Drain current can be further improved at the expense of BV by increasing the doping of the drift region.

VCSELs and silicon light sources exploiting SOI grating mirrors

DEFF Research Database (Denmark)

Chung, Il-Sug; Mørk, Jesper

2012-01-01

In this talk, novel vertical-cavity laser structure consisting of a dielectric Bragg reflector, a III-V active region, and a high-index-contrast grating made in the Si layer of a silicon-on-insulator (SOI) wafer will be presented. In the Si light source version of this laser structure, the SOI...... the Bragg reflector. Numerical simulations show that both the silicon light source and the VCSEL exploiting SOI grating mirrors have superior performances, compared to existing silicon light sources and long wavelength VCSELs. These devices are highly adequate for chip-level optical interconnects as well...

Hybrid III-V/SOI Resonant Cavity Photodetector

DEFF Research Database (Denmark)

Learkthanakhachon, Supannee; Taghizadeh, Alireza; Park, Gyeong Cheol

2016-01-01

A hybrid III-V/SOI resonant cavity photo detector has been demonstrated, which comprises an InP grating reflectorand a Si grating reflector. It can selectively detects an incident light with 1.54-µm wavelength and TM polarization.......A hybrid III-V/SOI resonant cavity photo detector has been demonstrated, which comprises an InP grating reflectorand a Si grating reflector. It can selectively detects an incident light with 1.54-µm wavelength and TM polarization....

21 CFR 201.20 - Declaration of presence of FD&C Yellow No. 5 and/or FD&C Yellow No. 6 in certain drugs for human...

Science.gov (United States)

2010-04-01

... eye, containing FD&C Yellow No. 5 as a color additive using the names FD&C Yellow No. 5 and tartrazine... “Contains FD&C Yellow No. 5 (tartrazine) as a color additive” or “Contains color additives including FD&C Yellow No. 5 (tartrazine)”. The labels of certain drug products subject to this labeling requirement that...

Database marketing practices and opportunities in a newly emerging African market

NARCIS (Netherlands)

Paas, L.J.

2009-01-01

In this paper, qualitative research is conducted to gain insight into the current application and potential of database marketing in a newly emerging African economy, Tanzania. It is found that database marketing applications in Tanzania are currently limited, but that there is potential. The most

21 CFR 74.1705 - FD&C Yellow No. 5.

Science.gov (United States)

2010-04-01

... listing the color additive using the names FD&C Yellow No. 5 and tartrazine. The label shall bear a statement such as “Contains FD&C Yellow No. 5 (tartrazine) as a color additive” or “Contains color additives including FD&C Yellow No. 5 (tartrazine).” The labels of certain drug products subject to this labeling...

Molecular Characterization of FT and FD homologs from Eriobotrya deflexa Nakai forma koshunensis

Directory of Open Access Journals (Sweden)

Ling eZhang

2016-01-01

Full Text Available In angiosperms, regulation of flowering is a vital process for successful reproduction. To date, the molecular mechanism of flowering is well studied in the model plant, Arabidopsis, in which key genes such as FLOWERING LOCUST (FTor FD have been identified to regulate flowering. However, the flowering mechanisms are still largely unknown in fruit trees like loquat. To this end, we first cloned one FT- and two FD-like genes from the loquat (E. deflexa Nakai f. koshunensis and referred to as EdFT, EdFD1 and EdFD2, respectively. Phylogenetic analysis has shown that EdFT, EdFD1 and EdFD2 are conserved during the evolution process. EdFT is mainly expressed in reproductive tissues (e.g. flower buds, flowers and fruits, while EdFD1 and EdFD2 are mainly expressed in apical buds including leaf buds and flower buds. EdFT is localized in the whole cell, while EdFD1 or EdFD2 is localized in the nucleus. Ectopic expression of EdFT, EdFD1 and EdFD2 in Arabidopsis results in early flowering. In addition, we have also revealed that the EdFT interacts with both EdFD1 and EdFD2. Overall, these data suggest that the EdFT, EdFD1 and EdFD2 are the functional homologs of FT and FD, respectively, which might act together to regulate loquat flowering through a similar mechanism found in Arabidopsis.

FinFET and UTBB for RF SOI communication systems

Science.gov (United States)

Raskin, Jean-Pierre

2016-11-01

Performance of RF integrated circuit (IC) is directly linked to the analog and high frequency characteristics of the transistors, the quality of the back-end of line process as well as the electromagnetic properties of the substrate. Thanks to the introduction of the trap-rich high-resistivity Silicon-on-Insulator (SOI) substrate on the market, the ICs requirements in term of linearity are fulfilled. Today partially depleted SOI MOSFET is the mainstream technology for RF SOI systems. Future generations of mobile communication systems will require transistors with better high frequency performance at lower power consumption. The advanced MOS transistors in competition are FinFET and Ultra Thin Body and Buried oxide (UTBB) SOI MOSFETs. Both devices have been intensively studied these last years. Most of the reported data concern their digital performance. In this paper, their analog/RF behavior is described and compared. Both show similar characteristics in terms of transconductance, Early voltage, voltage gain, self-heating issue but UTBB outperforms FinFET in terms of cutoff frequencies thanks to their relatively lower fringing parasitic capacitances.

A novel nanoscale SOI MOSFET by embedding undoped region for improving self-heating effect

Science.gov (United States)

Ghaffari, Majid; Orouji, Ali A.

2018-06-01

Because of the low thermal conductivity of the SiO2 (oxide), the Buried Oxide (BOX) layer in a Silicon-On-Insulator Metal-Oxide Semiconductor Field-Effect Transistor (SOI MOSFET) prevents heat dissipation in the silicon layer and causes increase in the device lattice temperature. In this paper, a new technique is proposed for reducing Self-Heating Effects (SHEs). The key idea in the proposed structure is using a Silicon undoped Region (SR) in the nanoscale SOI MOSFET under the drain and channel regions in order to decrease the SHE. The novel transistor is named Silicon undoped Region SOI-MOSFET (SR-SOI). Due to the embedded silicon undoped region in the suitable place, the proposed structure has decreased the device lattice temperature. The location and dimensions of the proposed region have been carefully optimized to achieve the best results. This work has explored enhancement such as decreased maximum lattice temperature, increased electron mobility, increased drain current, lower DC drain conductance and higher DC transconductance and also decreased bandgap energy variations. Also, for modeling of the structure in the SPICE tools, the main characterizations have been extracted such as thermal resistance (RTH), thermal capacitance (CTH), and SHE characteristic frequency (fTH). All parameters are extracted in relation with the AC operation indicate excellent performance of the SR-SOI device. The results show that proposed region is a suitable alternative to oxide as a part of the buried oxide layer in SOI structures and has better performance in high temperature. Using two-dimensional (2-D) and two-carrier device simulation is done comparison of the SR-SOI structure with a Conventional SOI (C-SOI). As a result, the SR-SOI device can be regarded as a useful substitution for the C-SOI device in nanoscale integrated circuits as a reliable device.

Technology development for SOI monolithic pixel detectors

International Nuclear Information System (INIS)

Marczewski, J.; Domanski, K.; Grabiec, P.; Grodner, M.; Jaroszewicz, B.; Kociubinski, A.; Kucharski, K.; Tomaszewski, D.; Caccia, M.; Kucewicz, W.; Niemiec, H.

2006-01-01

A monolithic detector of ionizing radiation has been manufactured using silicon on insulator (SOI) wafers with a high-resistivity substrate. In our paper the integration of a standard 3 μm CMOS technology, originally designed for bulk devices, with fabrication of pixels in the bottom wafer of a SOI substrate is described. Both technological sequences have been merged minimizing thermal budget and providing suitable properties of all the technological layers. The achieved performance proves that fully depleted monolithic active pixel matrix might be a viable option for a wide spectrum of future applications

Worst-Case Bias During Total Dose Irradiation of SOI Transistors

International Nuclear Information System (INIS)

Ferlet-Cavrois, V.; Colladant, T.; Paillet, P.; Leray, J.-L; Musseau, O.; Schwank, James R.; Shaneyfelt, Marty R.; Pelloie, J.L.; Du Port de Poncharra, J.

2000-01-01

The worst case bias during total dose irradiation of partially depleted SOI transistors (from SNL and from CEA/LETI) is correlated to the device architecture. Experiments and simulations are used to analyze SOI back transistor threshold voltage shift and charge trapping in the buried oxide

Monolithic integration of micromachined sensors and CMOS circuits based on SOI technologies

International Nuclear Information System (INIS)

Yu Xiaomei; Tang Yaquan; Zhang Haitao

2008-01-01

This note presents a novel way to monolithically integrate micro-cantilever sensors and signal conditioning circuits by combining SOI CMOS and SOI micromachining technologies. In order to improve the sensor performance and reduce the system volume, an integrated sensor system composed of a piezoresistive cantilever array, a temperature-compensation current reference, a digitally controlled multiplexer and an instrument amplifier is designed and finally fabricated. A post-SOI CMOS process is developed to realize the integrated sensor system which is based on a standard CMOS process with one more mask to define the cantilever structure at the end of the process. Measurements on the finished SOI CMOS devices and circuits show that the integration process has good compatibility both for the cantilever sensors and for the CMOS circuits, and the SOI CMOS integration process can decrease about 25% sequences compared with the bulk silicon CMOS process. (note)

iSIGHT-FD scalability test report.

Energy Technology Data Exchange (ETDEWEB)

Clay, Robert L.; Shneider, Max S.

2008-07-01

The engineering analysis community at Sandia National Laboratories uses a number of internal and commercial software codes and tools, including mesh generators, preprocessors, mesh manipulators, simulation codes, post-processors, and visualization packages. We define an analysis workflow as the execution of an ordered, logical sequence of these tools. Various forms of analysis (and in particular, methodologies that use multiple function evaluations or samples) involve executing parameterized variations of these workflows. As part of the DART project, we are evaluating various commercial workflow management systems, including iSIGHT-FD from Engineous. This report documents the results of a scalability test that was driven by DAKOTA and conducted on a parallel computer (Thunderbird). The purpose of this experiment was to examine the suitability and performance of iSIGHT-FD for large-scale, parameterized analysis workflows. As the results indicate, we found iSIGHT-FD to be suitable for this type of application.

The Bridges SOI Model School Program at Palo Verde School, Palo Verde, Arizona.

Science.gov (United States)

Stock, William A.; DiSalvo, Pamela M.

The Bridges SOI Model School Program is an educational service based upon the SOI (Structure of Intellect) Model School curriculum. For the middle seven months of the academic year, all students in the program complete brief daily exercises that develop specific cognitive skills delineated in the SOI model. Additionally, intensive individual…

A novel self-aligned oxygen (SALOX) implanted SOI MOSFET device structure

Science.gov (United States)

Tzeng, J. C.; Baerg, W.; Ting, C.; Siu, B.

The morphology of the novel self-aligned oxygen implanted SOI (SALOX SOI) [1] MOSFET was studied. The channel silicon of SALOX SOI was confirmed to be undamaged single crystal silicon and was connected with the substrate. Buried oxide formed by oxygen implantation in this SALOX SOI structure was shown by a cross section transmission electron micrograph (X-TEM) to be amorphous. The source/drain silicon on top of the buried oxide was single crystal, as shown by the transmission electron diffraction (TED) pattern. The source/drain regions were elevated due to the buried oxide volume expansion. A sharp silicon—silicon dioxide interface between the source/drain silicon and buried oxide was observed by Auger electron spectroscopy (AES). Well behaved n-MOS transistor current voltage characteristics were obtained and showed no I-V kink.

Micromachined thin-film sensors for SOI-CMOS co-integration

CERN Document Server

Laconte, Jean; Raskin, Jean-Pierre

2006-01-01

Co-integration of MEMS and MOS in SOI technology is promising and well demonstrated hereThe impact of Micromachining on SOI devices is deeply analyzed for the first timeInclude extensive TMAH etching, residual stress, microheaters, gas-flow sensors reviewResidual stresses in thin films need to be more and more monitored in MEMS designsTMAH micromachining is an attractive alternative to KOH.

First results of a Double-SOI pixel chip for X-ray imaging

Energy Technology Data Exchange (ETDEWEB)

Lu, Yunpeng, E-mail: yplu@ihep.ac.cn [State Key Laboratory of Particle Detection and Electronics (Institute of High Energy Physics, CAS), Beijing 100049 (China); Ouyang, Qun [State Key Laboratory of Particle Detection and Electronics (Institute of High Energy Physics, CAS), Beijing 100049 (China); Arai, Yasuo [Institute of Particle and Nuclear Studies, High Energy Accelerator Research Org., KEK, Tsukuba 305-0801 (Japan); Liu, Yi; Wu, Zhigang; Zhou, Yang [State Key Laboratory of Particle Detection and Electronics (Institute of High Energy Physics, CAS), Beijing 100049 (China)

2016-09-21

Aiming at low energy X-ray imaging, a prototype chip based on Double-SOI process was designed and tested. The sensor and pixel circuit were characterized. The long lasting crosstalk issue in SOI technology was understood. The operation of pixel was verified with a pulsed infrared laser beam. The depletion of sensor revealed by signal amplitudes is consistent with the one revealed by I–V curve. An s-curve fitting resulted in a sigma of 153 e{sup −} among which equivalent noise charge (ENC) contributed 113 e{sup −}. It's the first time that the crosstalk issue in SOI technology was solved and a counting type SOI pixel demonstrated the detection of low energy radiation quantitatively.

Translocation of radiocesium from stems and leaves of plants and the effect on radiocesium concentrations in newly emerged plant tissues

International Nuclear Information System (INIS)

Tagami, Keiko; Uchida, Shigeo; Ishii, Nobuyoshi; Kagiya, Shigeo

2012-01-01

An accident occurred at the Fukushima Dai-ichi Nuclear Power Plant in March 2011 at which time large amounts of radionuclides were released into the atmosphere and the sea. In early May 2011, it was found that newly emerged tea (Camellia sinensis) leaves contained radiocesium, both 134 Cs and 137 Cs in some areas more than 300 km away from the Fukushima plant. To understand the mechanisms of radiocesium transfer to newly emerged tissues (shoots, leaves and fruits) of other plants in the future, radiocesium concentrations in newly emerged leaves of 14 plant species collected from the sampling areas in and near National Institute of Radiological Sciences in Chiba, Japan. The studied plant types were: (1) herbaceous plants, (2) woody plants with no old leaves at the time of the March accident, and (3) woody plants with old leaves out before the accident. About 40–50 d after the start of the accident, newly emerged leaves from woody plant with old leaves tended to show higher values than other woody or herbaceous plants. Concentrations of radiocesium in newly emerged tissues of trees decreased with time, but they did not decrease to the level of herbaceous plants. The type of the plant and presence of old leaves at the time of the heavy deposition period affected the radiocesium concentrations in newly emerged tissues.

Second Harmonic Generation characterization of SOI wafers: Impact of layer thickness and interface electric field

Science.gov (United States)

Damianos, D.; Vitrant, G.; Lei, M.; Changala, J.; Kaminski-Cachopo, A.; Blanc-Pelissier, D.; Cristoloveanu, S.; Ionica, I.

2018-05-01

In this work, we investigate Second Harmonic Generation (SHG) as a non-destructive characterization method for Silicon-On-Insulator (SOI) materials. For thick SOI stacks, the SHG signal is related to the thickness variations of the different layers. However, in thin SOI films, the comparison between measurements and optical modeling suggests a supplementary SHG contribution attributed to the electric fields at the SiO2/Si interfaces. The impact of the electric field at each interface of the SOI on the SHG is assessed. The SHG technique can be used to evaluate interfacial electric fields and consequently interface charge density in SOI materials.

Newly approved antibiotics and antibiotics reserved for resistant infections: Implications for emergency medicine.

Science.gov (United States)

Mazer-Amirshahi, Maryann; Pourmand, Ali; May, Larissa

2017-01-01

Millions of patients are evaluated every year in the emergency department (ED) for bacterial infections. Emergency physicians often diagnose and prescribe initial antibiotic therapy for a variety of bacterial infections, ranging from simple urinary tract infections to severe sepsis. In life-threatening infections, inappropriate choice of initial antibiotic has been shown to increase morbidity and mortality. As such, initiation of appropriate antibiotic therapy on the part of the emergency physician is critical. Increasing rates of antibiotic resistance, drug allergies, and antibiotic shortages further complicates the choice of antibiotics. Patients may have a history of prior resistant infections or culture data indicating that common first-line antibiotics used in the ED may be ineffective. In recent years, there have been several new antibiotic approvals as well as renewed interest in second and third line antibiotics because of the aforementioned concerns. In addition, several newly approved antibiotics have the advantage of being administered once weekly or even as a single infusion, which has the potential to decrease hospitalizations and healthcare costs. This article reviews newly approved antibiotics and antibiotics used to treat resistant infections with a focus on implications for emergency medicine. Copyright © 2016 Elsevier Inc. All rights reserved.

An SEU resistant 256K SOI SRAM

Science.gov (United States)

Hite, L. R.; Lu, H.; Houston, T. W.; Hurta, D. S.; Bailey, W. E.

1992-12-01

A novel SEU (single event upset) resistant SRAM (static random access memory) cell has been implemented in a 256K SOI (silicon on insulator) SRAM that has attractive performance characteristics over the military temperature range of -55 to +125 C. These include worst-case access time of 40 ns with an active power of only 150 mW at 25 MHz, and a worst-case minimum WRITE pulse width of 20 ns. Measured SEU performance gives an Adams 10 percent worst-case error rate of 3.4 x 10 exp -11 errors/bit-day using the CRUP code with a conservative first-upset LET threshold. Modeling does show that higher bipolar gain than that measured on a sample from the SRAM lot would produce a lower error rate. Measurements show the worst-case supply voltage for SEU to be 5.5 V. Analysis has shown this to be primarily caused by the drain voltage dependence of the beta of the SOI parasitic bipolar transistor. Based on this, SEU experiments with SOI devices should include measurements as a function of supply voltage, rather than the traditional 4.5 V, to determine the worst-case condition.

Classical emergence of intrinsic spin-orbit interaction of light at the nanoscale

Science.gov (United States)

Vázquez-Lozano, J. Enrique; Martínez, Alejandro

2018-03-01

Traditionally, in macroscopic geometrical optics intrinsic polarization and spatial degrees of freedom of light can be treated independently. However, at the subwavelength scale these properties appear to be coupled together, giving rise to the spin-orbit interaction (SOI) of light. In this work we address theoretically the classical emergence of the optical SOI at the nanoscale. By means of a full-vector analysis involving spherical vector waves we show that the spin-orbit factorizability condition, accounting for the mutual influence between the amplitude (spin) and phase (orbit), is fulfilled only in the far-field limit. On the other side, in the near-field region, an additional relative phase introduces an extra term that hinders the factorization and reveals an intricate dynamical behavior according to the SOI regime. As a result, we find a suitable theoretical framework able to capture analytically the main features of intrinsic SOI of light. Besides allowing for a better understanding into the mechanism leading to its classical emergence at the nanoscale, our approach may be useful to design experimental setups that enhance the response of SOI-based effects.

SOI MESFETs on high-resistivity, trap-rich substrates

Science.gov (United States)

Mehr, Payam; Zhang, Xiong; Lepkowski, William; Li, Chaojiang; Thornton, Trevor J.

2018-04-01

The DC and RF characteristics of metal-semiconductor field-effect-transistors (MESFETs) on conventional CMOS silicon-on-insulator (SOI) substrates are compared to nominally identical devices on high-resistivity, trap-rich SOI substrates. While the DC transfer characteristics are statistically identical on either substrate, the maximum available gain at GHz frequencies is enhanced by ∼2 dB when using the trap-rich substrates, with maximum operating frequencies, fmax, that are approximately 5-10% higher. The increased fmax is explained by the reduced substrate conduction at GHz frequencies using a lumped-element, small-signal model.

Development of monolithic pixel detector with SOI technology for the ILC vertex detector

Science.gov (United States)

Yamada, M.; Ono, S.; Tsuboyama, T.; Arai, Y.; Haba, J.; Ikegami, Y.; Kurachi, I.; Togawa, M.; Mori, T.; Aoyagi, W.; Endo, S.; Hara, K.; Honda, S.; Sekigawa, D.

2018-01-01

We have been developing a monolithic pixel sensor for the International Linear Collider (ILC) vertex detector with the 0.2 μm FD-SOI CMOS process by LAPIS Semiconductor Co., Ltd. We aim to achieve a 3 μm single-point resolution required for the ILC with a 20×20 μm2 pixel. Beam bunch crossing at the ILC occurs every 554 ns in 1-msec-long bunch trains with an interval of 200 ms. Each pixel must record the charge and time stamp of a hit to identify a collision bunch for event reconstruction. Necessary functions include the amplifier, comparator, shift register, analog memory and time stamp implementation in each pixel, and column ADC and Zero-suppression logic on the chip. We tested the first prototype sensor, SOFIST ver.1, with a 120 GeV proton beam at the Fermilab Test Beam Facility in January 2017. SOFIST ver.1 has a charge sensitive amplifier and two analog memories in each pixel, and an 8-bit Wilkinson-type ADC is implemented for each column on the chip. We measured the residual of the hit position to the reconstructed track. The standard deviation of the residual distribution fitted by a Gaussian is better than 3 μm.

A MEMS SOI-based piezoresistive fluid flow sensor

Science.gov (United States)

Tian, B.; Li, H. F.; Yang, H.; Song, D. L.; Bai, X. W.; Zhao, Y. L.

2018-02-01

In this paper, a SOI (silicon-on-insulator)-based piezoresistive fluid flow sensor is presented; the presented flow sensor mainly consists of a nylon sensing head, stainless steel cantilever beam, SOI sensor chip, printed circuit board, half-cylinder gasket, and stainless steel shell. The working principle of the sensor and some detailed contrastive analysis about the sensor structure were introduced since the nylon sensing head and stainless steel cantilever beam have distinct influence on the sensor performance; the structure of nylon sensing head and stainless steel cantilever beam is also discussed. The SOI sensor chip was fabricated using micro-electromechanical systems technologies, such as reactive ion etching and low pressure chemical vapor deposition. The designed fluid sensor was packaged and tested; a calibration installation system was purposely designed for the sensor experiment. The testing results indicated that the output voltage of the sensor is proportional to the square of the fluid flow velocity, which is coincident with the theoretical derivation. The tested sensitivity of the sensor is 3.91 × 10-4 V ms2/kg.

L’estime de soi : un cas particulier d’estime sociale ?

OpenAIRE

Santarelli, Matteo

2016-01-01

Un des traits plus originaux de la théorie intersubjective de la reconnaissance d’Axel Honneth, consiste dans la façon dont elle discute la relation entre estime sociale et estime de soi. En particulier, Honneth présente l’estime de soi comme un reflet de l’estime sociale au niveau individuel. Dans cet article, je discute cette conception, en posant la question suivante : l’estime de soi est-elle un cas particulier de l’estime sociale ? Pour ce faire, je me concentre sur deux problèmes crucia...

Improved operation of graded-channel SOI nMOSFETs down to liquid helium temperature

Science.gov (United States)

Pavanello, Marcelo Antonio; de Souza, Michelly; Ribeiro, Thales Augusto; Martino, João Antonio; Flandre, Denis

2016-11-01

This paper presents the operation of Graded-Channel (GC) Silicon-On-Insulator (SOI) nMOSFETs at low temperatures down to liquid helium temperature in comparison to standard uniformly doped transistors. Devices from two different technologies have been measured and show that the mobility increase rate with temperature for GC SOI transistors is similar to uniformly doped devices for temperatures down to 90 K. However, at liquid helium temperature the rate of mobility increase is larger in GC SOI than in standard devices because of the different mobility scattering mechanisms. The analog properties of GC SOI devices have been investigated down to 4.16 K and show that because of its better transconductance and output conductance, an intrinsic voltage gain improvement with temperature is also obtained for devices in the whole studied temperature range. GC devices are also capable of reducing the impact ionization due to the high electric field in the drain region, increasing the drain breakdown voltage of fully-depleted SOI MOSFETs at any studied temperature and the kink voltage at 4.16 K.

21 CFR 866.5540 - Immunoglobulin G (Fd fragment specific) immunological test system.

Science.gov (United States)

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Immunoglobulin G (Fd fragment specific... Test Systems § 866.5540 Immunoglobulin G (Fd fragment specific) immunological test system. (a) Identification. An immunoglobulin G (Fd fragment specific) immunological test system is a device that consists of...

Single-Event Upset and Scaling Trends in New Generation of the Commercial SOI PowerPC Microprocessors

Science.gov (United States)

Irom, Farokh; Farmanesh, Farhad; Kouba, Coy K.

2006-01-01

Single-event upset effects from heavy ions are measured for Motorola silicon-on-insulator (SOI) microprocessor with 90 nm feature sizes. The results are compared with previous results for SOI microprocessors with feature sizes of 130 and 180 nm. The cross section of the 90 nm SOI processors is smaller than results for 130 and 180 nm counterparts, but the threshold is about the same. The scaling of the cross section with reduction of feature size and core voltage for SOI microprocessors is discussed.

21 CFR 74.1203 - FD&C Green No. 3.

Science.gov (United States)

2010-04-01

... of § 74.203(a)(1) and (b). (2) Color additive mixtures for drug use made with FD&C Green No. 3 may... use in color additive mixtures for coloring drugs. (b) Uses and restrictions. The color additive FD&C... Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL LISTING OF COLOR...

Basics principles of flat detector computed tomography (FD-CT)

International Nuclear Information System (INIS)

Kyriakou, Y.; Struffert, T.; Doerfler, A.; Kalender, W.A.

2009-01-01

Flat detectors (FDs) have been developed for use in radiography and fluoroscopy to replace standard X-ray film, film-screen combinations and image intensifiers (II). In comparison to X-ray film and II, FD technology offers higher dynamic range, dose reduction, fast digital readout and the possibility for dynamic acquisitions of image series, yet keeping to a compact design. It appeared logical to employ FD designs also for computed tomography (CT) imaging. FDCT has meanwhile become widely accepted for interventional and intra-operative imaging using C-arm systems. Additionally, the introduction of FD technology was a milestone for soft-tissue CT imaging in the interventional suite which was not possible with II systems in the past. This review focuses on technical and performance issues of FD technology and its wide range of applications for CT imaging. FDCT is not aimed at challenging standard clinical CT as regards to the typical diagnostic examinations, but it has already proven unique for a number of dedicated CT applications offering distinct practical advantages, above all the availability of immediate CT imaging during an intervention. (orig.) [de

Conceptualizing the Use of Translanguaging in Initial Content Assessments for Newly Arrived Emergent Bilingual Students. Research Report. ETS RR-17-07

Science.gov (United States)

Lopez, Alexis A.; Turkan, Sultan; Guzman-Orth, Danielle

2017-01-01

"Translanguaging" refers to the flexible use of the bilingual repertoire. In this report, we provide a theoretical framework to support the use of translanguaging to assess the academic content knowledge of newly arrived emergent bilingual students. In this report, we argue that translanguaging offers newly arrived emergent bilingual…

Acute care surgery: defining mortality in emergency general surgery in the state of Maryland.

Science.gov (United States)

Narayan, Mayur; Tesoriero, Ronald; Bruns, Brandon R; Klyushnenkova, Elena N; Chen, Hegang; Diaz, Jose J

2015-04-01

Emergency general surgery (EGS) is a major component of acute care surgery, however, limited data exist on mortality with respect to trauma center (TC) designation. We hypothesized that mortality would be lower for EGS patients treated at a TC vs non-TC (NTC). A retrospective review of the Maryland Health Services Cost Review Commission database from 2009 to 2013 was performed. The American Association for the Surgery of Trauma EGS ICD-9 codes were used to identify EGS patients. Data collected included demographics, TC designation, emergency department admissions, and All Patients Refined Severity of Illness (APR_SOI). Trauma center designation was used as a marker of a formal acute care surgery program. Primary outcomes included in-hospital mortality. Multivariable logistic regression analysis was performed controlling for age. There were 817,942 EGS encounters. Mean ± SD age of patients was 60.1 ± 18.7 years, 46.5% were males; 71.1% of encounters were at NTCs; and 75.8% were emergency department admissions. Overall mortality was 4.05%. Mortality was calculated based on TC designation controlling for age across APR_SOI strata. Multivariable logistic regression analysis did not show statistically significant differences in mortality between hospital levels for minor APR_SOI. For moderate APR_SOI, mortality was significantly lower for TCs compared with NTCs (p surgery patients treated at TCs had lower mortality for moderate APR_SOI, but increased mortality for extreme APR_SOI when compared with NTCs. Additional investigation is required to better evaluate this unexpected finding. Copyright © 2015 American College of Surgeons. Published by Elsevier Inc. All rights reserved.

Output-Conductance Transition-Free Method for Improving Radio-Frequency Linearity of SOI MOSFET Circuits

Directory of Open Access Journals (Sweden)

A. Daghighi

2013-09-01

Full Text Available In this article, a novel concept is introduced to improve the radio frequency (RF linearity of partially-depleted (PD silicon-on-insulator (SOI MOSFET circuits. The transition due to the non-zero body resistance (RBody in output conductance of PD SOI devices leads to linearity degradation. A relation for RBody is defined to eliminate the transition and a method to obtain transition-free circuit is shown. 3-D Simulations of various body-contacted devices are carried out to extract the transition-free body resistances. To identify the output conductance transition-free concept and its application to RF circuits, a 2.4 GHz low noise amplifier (LNA is analyzed. Mixed mode device-circuit analysis is carried out to simultaneously solve device transport equations and circuit spice models. FFT calculations are performed on the output signal to compute harmonic distortion figures. Comparing the conventional body-contacted and transition-free SOI LNAs, third harmonic distortion (HD3 and total harmonic distortion (THD are improved by 16% and 24%, respectively. Two-tone test is used to analyze third order intermodulation distortions. OIP3 is improved in transition-free SOI LNA by 17% comparing with the conventional body-contacted SOI LNA. These results show the possibility of application of transition-free design concept to improve linearity of RF SOI MOSFET circuits.

A multi-level capacitor-less memory cell fabricated on a nano-scale strained silicon-on-insulator

International Nuclear Information System (INIS)

Park, Jea-Gun; Kim, Seong-Je; Shin, Mi-Hee; Song, Seung-Hyun; Shim, Tae-Hun; Chung, Sung-Woong; Enomoto, Hirofumi

2011-01-01

A multi-level capacitor-less memory cell was fabricated with a fully depleted n-metal-oxide-semiconductor field-effect transistor on a nano-scale strained silicon channel on insulator (FD sSOI n-MOSFET). The 0.73% biaxial tensile strain in the silicon channel of the FD sSOI n-MOSFET enhanced the effective electron mobility to ∼ 1.7 times that with an unstrained silicon channel. This thereby enables both front- and back-gate cell operations, demonstrating eight-level volatile memory-cell operation with a 1 ms retention time and 12 μA memory margin. This is a step toward achieving a terabit volatile memory cell.

A Comparison of Traditional and Newly Emerging Forms of Cooperative Capitalization

OpenAIRE

Barton, David G.

2004-01-01

This paper compares the traditional forms of capitalization used by American co-ops to newly emerging forms. It is based on an in-depth review of several case co-ops. A broad framework is provided that may be beneficial in more extensive studies of capitalization practices of cooperatives and similar organizations. It is divided into three parts. Part One outlines the alternative capitalization forms being used by cooperatives and their antecedents, where conversions to other structures and f...

A high voltage SOI pLDMOS with a partial interface equipotential floating buried layer

International Nuclear Information System (INIS)

Wu Lijuan; Zhang Wentong; Zhang Bo; Li Zhaoji

2013-01-01

A novel silicon-on-insulator (SOI) high-voltage pLDMOS is presented with a partial interface equipotential floating buried layer (FBL) and its analytical model is analyzed in this paper. The surface heavily doped p-top layers, interface floating buried N + /P + layers, and three-step field plates are designed carefully in the FBL SOI pLDMOS to optimize the electric field distribution of the drift region and reduce the specific resistance. On the condition of ESIMOX (epoxy separated by implanted oxygen), it has been shown that the breakdown voltage of the FBL SOI pLDMOS is increased from −232 V of the conventional SOI to −425 V and the specific resistance R on,sp is reduced from 0.88 to 0.2424 Ω·cm 2 . (semiconductor devices)

SOI MESFETs for Extreme Environment Electronics, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — We are proposing a new extreme environment electronics (EEE) technology based on silicon-on-insulator (SOI) metal-semiconductor field-effect transistors (MESFETs)....

Analytical Subthreshold Current and Subthreshold Swing Models for a Fully Depleted (FD) Recessed-Source/Drain (Re-S/D) SOI MOSFET with Back-Gate Control

Science.gov (United States)

Saramekala, Gopi Krishna; Tiwari, Pramod Kumar

2017-08-01

Two-dimensional (2D) analytical models for the subthreshold current and subthreshold swing of the back-gated fully depleted recessed-source/drain (Re-S/D) silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) are presented. The surface potential is determined by solving the 2D Poisson equation in both channel and buried-oxide (BOX) regions, considering suitable boundary conditions. To derive closed-form expressions for the subthreshold characteristics, the virtual cathode potential expression has been derived in terms of the minimum of the front and back surface potentials. The effect of various device parameters such as gate oxide and Si film thicknesses, thickness of source/drain penetration into BOX, applied back-gate bias voltage, etc. on the subthreshold current and subthreshold swing has been analyzed. The validity of the proposed models is established using the Silvaco ATLAS™ 2D device simulator.

Electrical characterization of thin SOI wafers using lateral MOS transient capacitance measurements

International Nuclear Information System (INIS)

Wang, D.; Ueda, A.; Takada, H.; Nakashima, H.

2006-01-01

A novel electrical evaluation method was proposed for crystal quality characterization of thin Si on insulator (SOI) wafers, which was done by measurement of minority carrier generation lifetime (τ g ) using transient capacitance method for lateral metal-oxide-semiconductor (MOS) capacitor. The lateral MOS capacitors were fabricated on three kinds of thin SOI wafers. The crystal quality difference among these three wafers was clearly shown by the τ g measurement results and discussed from a viewpoint of SOI fabrication. The series resistance influence on the capacitance measurement for this lateral MOS capacitor was discussed in detail. The validity of this method was confirmed by comparing the intensities of photoluminescence signals due to electron-hole droplet in the band-edge emission

Simulation of dual-gate SOI MOSFET with different dielectric layers

Science.gov (United States)

Yadav, Jyoti; Chaudhary, R.; Mukhiya, R.; Sharma, R.; Khanna, V. K.

2016-04-01

The paper presents the process design and simulation of silicon-on-insulator (SOI)-based dual-gate metal oxide field-effect transistor (DG-MOSFET) stacked with different dielectric layers on the top of gate oxide. A detailed 2D process simulation of SOI-MOSFETs and its electrical characterization has been done using SILVACO® TCAD tool. A variation in transconductance was observed with different dielectric layers, AlN-gate MOSFET having the highest tranconductance value as compared to other three dielectric layers (SiO2, Si3N4 and Al2O3).

Micromachined Thin-Film Sensors for SOI-CMOS Co-Integration

Science.gov (United States)

Laconte, Jean; Flandre, D.; Raskin, Jean-Pierre

Co-integration of sensors with their associated electronics on a single silicon chip may provide many significant benefits regarding performance, reliability, miniaturization and process simplicity without significantly increasing the total cost. Micromachined Thin-Film Sensors for SOI-CMOS Co-integration covers the challenges and interests and demonstrates the successful co-integration of gas flow sensors on dielectric membrane, with their associated electronics, in CMOS-SOI technology. We firstly investigate the extraction of residual stress in thin layers and in their stacking and the release, in post-processing, of a 1 μm-thick robust and flat dielectric multilayered membrane using Tetramethyl Ammonium Hydroxide (TMAH) silicon micromachining solution.

High performance flexible CMOS SOI FinFETs

KAUST Repository

Fahad, Hossain M.; Sevilla, Galo T.; Ghoneim, Mohamed T.; Hussain, Muhammad Mustafa

2014-01-01

We demonstrate the first ever CMOS compatible soft etch back based high performance flexible CMOS SOI FinFETs. The move from planar to non-planar FinFETs has enabled continued scaling down to the 14 nm technology node. This has been possible due

A novel δ-doped partially insulated dopant-segregated Schottky barrier SOI MOSFET for analog/RF applications

International Nuclear Information System (INIS)

Patil, Ganesh C; Qureshi, S

2011-01-01

In this paper, a comparative analysis of single-gate dopant-segregated Schottky barrier (DSSB) SOI MOSFET and raised source/drain ultrathin-body SOI MOSFET (RSD UTB) has been carried out to explore the thermal efficiency, scalability and analog/RF performance of these devices. A novel p-type δ-doped partially insulated DSSB SOI MOSFET (DSSB Pi-OX-δ) has been proposed to reduce the self-heating effect and to improve the high-frequency performance of DSSB SOI MOSFET over RSD UTB. The improved analog/RF figures of merit such as transconductance, transconductance generation factor, unity-gain frequency, maximum oscillation frequency, short-circuit current gain and unilateral power gain in DSSB Pi-OX-δ MOSFET show the suitability of this device for analog/RF applications. The reduced drain-induced barrier lowering, subthreshold swing and parasitic capacitances also make this device highly scalable. By using mixed-mode simulation capability of MEDICI simulator a cascode amplifier has been implemented using all the structures (RSD UTB, DSSB SOI and DSSB Pi-OX-δ MOSFETs). The results of this implementation show that the gain-bandwidth product in the case of DSSB Pi-OX-δ MOSFET has improved by 50% as compared to RSD UTB and by 20% as compared to DSSB SOI MOSFET. The detailed fabrication flow of DSSB Pi-OX-δ MOSFET has been proposed which shows that with the bare minimum of steps the performance of DSSB SOI MOSFET can be improved significantly in comparison to RSD UTB

Evaluation of a High Temperature SOI Half-Bridge MOSFET Driver, Type CHT-HYPERION

Science.gov (United States)

Patterson, Richard; Hammoud, Ahmad

2010-01-01

Silicon-On-Insulator (SOI) technology utilizes the addition of an insulation layer in its structure to reduce leakage currents and to minimize parasitic junctions. As a result, SOIbased devices exhibit reduced internal heating as compared to the conventional silicon devices, consume less power, and can withstand higher operating temperatures. In addition, SOI electronic integrated circuits display good tolerance to radiation by virtue of introducing barriers or lengthening the path for penetrating particles and/or providing a region for trapping incident ionization. The benefits of these parts make them suitable for use in deep space and planetary exploration missions where extreme temperatures and radiation are encountered. Although designed for high temperatures, very little data exist on the operation of SOI devices and circuits at cryogenic temperatures. In this work, the performance of a commercial-off-the-shelf (COTS) SOI half-bridge driver integrated circuit was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to establish a baseline on the functionality and to determine suitability of this device for use in space exploration missions under extreme temperature conditions.

Pineapple Fruit Collapse: Newly Emerging Disease of Pineapple Fruit in Lampung, Indonesia

OpenAIRE

Joko Prasetyo; Titik Nur Aeny

2014-01-01

ABSTRACT Pineapple fruit collapse: newly emerging disease of pineapple fruit in Lampung, Indonesia Recently, a new disease on pineapple fruit has occurred in Lampung. Symptoms of the disease are complex. Fruits rotted and exuded copious liquid from the inter- fruitlet tissues accompanied by gas bubbles. Open spaces were formed inside the rotten fruit. Dissection of diseased fruit showed many cavities within its sceletal fibres and bad odour was exerted from the rotten tissues. A bacterial...

Indium arsenide-on-SOI MOSFETs with extreme lattice mismatch

Science.gov (United States)

Wu, Bin

Both molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD) have been used to explore the growth of InAs on Si. Despite 11.6% lattice mismatch, planar InAs structures have been observed by scanning electron microscopy (SEM) when nucleating using MBE on patterned submicron Si-on-insulator (SOI) islands. Planar structures of size as large as 500 x 500 nm 2 and lines of width 200 nm and length a few microns have been observed. MOCVD growth of InAs also generates single grain structures on Si islands when the size is reduced to 100 x 100 nm2. By choosing SOI as the growth template, selective growth is enabled by MOCVD. Post-growth pattern-then-anneal process, in which MOCVD InAs is deposited onto unpatterned SOI followed with patterning and annealing of InAs-on-Si structure, is found to change the relative lattice parameters of encapsulated 17/5 nm InAs/Si island. Observed from transmission electron diffraction (TED) patterns, the lattice mismatch of 17/5 nm InAs/Si island reduces from 11.2 to 4.2% after being annealed at 800°C for 30 minutes. High-k Al2O3 dielectrics have been deposited by both electron-beam-enabled physical vapor deposition (PVD) and atomic layer deposition (ALD). Films from both techniques show leakage currents on the order of 10-9A/cm2, at ˜1 MV/cm electric field, breakdown field > ˜6 MV/cm, and dielectric constant > 6, comparable to those of reported ALD prior arts by Groner. The first MOSFETs with extreme lattice mismatch InAs-on-SOI channels using PVD Al2O3 as the gate dielectric are characterized. Channel recess was used to improve the gate control of the drain current.

Formation of SIMOX–SOI structure by high-temperature oxygen implantation

International Nuclear Information System (INIS)

Hoshino, Yasushi; Kamikawa, Tomohiro; Nakata, Jyoji

2015-01-01

We have performed oxygen ion implantation in silicon at very high substrate-temperatures (⩽1000 °C) for the purpose of forming silicon-on-insulator (SOI) structure. We have expected that the high-temperature implantation can effectively avoids ion-beam-induced damages in the SOI layer and simultaneously stabilizes the buried oxide (BOX) and SOI-Si layer. Such a high-temperature implantation makes it possible to reduce the post-implantation annealing temperature. In the present study, oxygen ions with 180 keV are incident on Si(0 0 1) substrates at various temperatures from room temperature (RT) up to 1000 °C. The ion-fluencies are in order of 10"1"7–10"1"8 ions/cm"2. Samples have been analyzed by atomic force microscope, Rutherford backscattering, and micro-Raman spectroscopy. It is found in the AFM analysis that the surface roughness of the samples implanted at 500 °C or below are significantly small with mean roughness of less than 1 nm, and gradually increased for the 800 °C-implanted sample. On the other hand, a lot of dents are observed for the 1000 °C-implanted sample. RBS analysis has revealed that stoichiometric SOI-Si and BOX-SiO_2 layers are formed by oxygen implantation at the substrate temperatures of RT, 500, and 800 °C. However, SiO_2-BOX layer has been desorbed during the implantation. Raman spectra shows that the ion-beam-induced damages are fairly suppressed by such a high-temperatures implantation.

A novel SOI pressure sensor for high temperature application

International Nuclear Information System (INIS)

Li Sainan; Liang Ting; Wang Wei; Hong Yingping; Zheng Tingli; Xiong Jijun

2015-01-01

The silicon on insulator (SOI) high temperature pressure sensor is a novel pressure sensor with high-performance and high-quality. A structure of a SOI high-temperature pressure sensor is presented in this paper. The key factors including doping concentration and power are analyzed. The process of the sensor is designed with the critical process parameters set appropriately. The test result at room temperature and high temperature shows that nonlinear error below is 0.1%, and hysteresis is less than 0.5%. High temperature measuring results show that the sensor can be used for from room temperature to 350 °C in harsh environments. It offers a reference for the development of high temperature piezoresistive pressure sensors. (semiconductor devices)

Towards Polarization Diversity on the SOI Platform With Simple Fabrication Process

DEFF Research Database (Denmark)

Ding, Yunhong; Liu, Liu; Peucheret, Christophe

2011-01-01

We present a polarization diversity circuit built on the silicon-on-insulator (SOI) platform, which can be fabricated by a simple process. The polarization diversity is based on two identical air-clad asymmetrical directional couplers, which simultaneously play the roles of polarization splitter...... and rotator. A silicon polarization diversity circuit with a single microring resonator is fabricated on the SOI platform. Only ${1-dB polarization-dependent loss is demonstrated. A significant improvement of the polarization dependence is obtained for 20-Gb/s nonreturn-to-zero differential phase-shift keying...

Test-beam results of a SOI pixel detector prototype

CERN Document Server

Bugiel, Roma; Dannheim, Dominik; Fiergolski, Adrian; Hynds, Daniel; Idzik, Marek; Kapusta, P; Kucewicz, Wojciech; Munker, Ruth Magdalena; Nurnberg, Andreas Matthias

2018-01-01

This paper presents the test-beam results of a monolithic pixel-detector prototype fabricated in 200 nm Silicon-On-Insulator (SOI) CMOS technology. The SOI detector was tested at the CERN SPS H6 beam line. The detector is fabricated on a 500 μm thick high-resistivity float- zone n-type (FZ-n) wafer. The pixel size is 30 μm × 30 μm and its readout uses a source- follower configuration. The test-beam data are analysed in order to compute the spatial resolution and detector efficiency. The analysis chain includes pedestal and noise calculation, cluster reconstruction, as well as alignment and η-correction for non-linear charge sharing. The results show a spatial resolution of about 4.3 μm.

An Analytical Threshold Voltage Model of Fully Depleted (FD) Recessed-Source/Drain (Re-S/D) SOI MOSFETs with Back-Gate Control

Science.gov (United States)

Saramekala, Gopi Krishna; Tiwari, Pramod Kumar

2016-10-01

This paper presents an analytical threshold voltage model for back-gated fully depleted (FD), recessed-source drain silicon-on-insulator metal-oxide-semiconductor field-effect transistors (MOSFETs). Analytical surface potential models have been developed at front and back surfaces of the channel by solving the two-dimensional (2-D) Poisson's equation in the channel region with appropriate boundary conditions assuming a parabolic potential profile in the transverse direction of the channel. The strong inversion criterion is applied to the front surface potential as well as on the back one in order to find two separate threshold voltages for front and back channels of the device, respectively. The device threshold voltage has been assumed to be associated with the surface that offers a lower threshold voltage. The developed model was analyzed extensively for a variety of device geometry parameters like the oxide and silicon channel thicknesses, the thickness of the source/drain extension in the buried oxide, and the applied bias voltages with back-gate control. The proposed model has been validated by comparing the analytical results with numerical simulation data obtained from ATLAS™, a 2-D device simulator from SILVACO.

An analysis of radiation effects on electronics and soi-mos devices as an alternative

International Nuclear Information System (INIS)

Ikraiam, F. A.

2013-01-01

The effects of radiation on semiconductors and electronic components are analyzed. The performance of such circuitry depends upon the reliability of electronic devices where electronic components will be unavoidably exposed to radiation. This exposure can be detrimental or even fatal to the expected function of the devices. Single event effects (SEE), in particular, which lead to sudden device or system failure and total dose effects can reduce the lifetime of electronic devices in such systems are discussed. Silicon-on-insulator (SOI) technology is introduced as an alternative for radiation-hardened devices. I-V Characteristics Curves for SOI-MOS devices subjected to a different total radiation doses are illustrated. In addition, properties of some semiconductor materials such as diamond, diamond-like carbon films, SiC, GaP, and AlGaN/GaN are compared with those of SOI devices. The recognition of the potential usefulness of SOI-MOS semiconductor materials for harsh environments is discussed. A summary of radiation effects, impacts and mitigation techniques is also presented. (authors)

Generation and confinement of mobile charges in buried oxide of SOI substrates; Generation et confinement de charges mobiles dans les oxydes enterres de substrats SOI

Energy Technology Data Exchange (ETDEWEB)

Gruber, O.; Krawiec, S.; Musseau, O.; Paillet, Ph.; Courtot-Descharles, A. [CEA Bruyeres-le-Chatel, DIF, 91 (France)

1999-07-01

We analyze the mechanisms of generation and confinement of mobile protons resulting from hydrogen annealing of SOI buried oxides. This study of the mechanisms of generation and confinement of mobile protons in the buried oxide of SOI wafers emphasizes the importance of H+ diffusion in the oxide in the formation of a mobile charge. Under specific electric field conditions the irradiation of these devices results in a pinning of this mobile charge at the bottom Si-SiO{sub 2} interface. Ab initio calculations are in progress to investigate the possible precursor defects in the oxide and detail the mechanism for mobile proton generation and confinement. (authors)

Ultra-low specific on-resistance SOI double-gate trench-type MOSFET

International Nuclear Information System (INIS)

Lei Tianfei; Luo Xiaorong; Ge Rui; Chen Xi; Wang Yuangang; Yao Guoliang; Jiang Yongheng; Zhang Bo; Li Zhaoji

2011-01-01

An ultra-low specific on-resistance (R on,sp ) silicon-on-insulator (SOI) double-gate trench-type MOSFET (DG trench MOSFET) is proposed. The MOSFET features double gates and an oxide trench: the oxide trench is in the drift region, one trench gate is inset in the oxide trench and one trench gate is extended into the buried oxide. Firstly, the double gates reduce R on,sp by forming dual conduction channels. Secondly, the oxide trench not only folds the drift region, but also modulates the electric field, thereby reducing device pitch and increasing the breakdown voltage (BV). ABV of 93 V and a R on,sp of 51.8 mΩ·mm 2 is obtained for a DG trench MOSFET with a 3 μm half-cell pitch. Compared with a single-gate SOI MOSFET (SG MOSFET) and a single-gate SOI MOSFET with an oxide trench (SG trench MOSFET), the R on,sp of the DG trench MOSFET decreases by 63.3% and 33.8% at the same BV, respectively. (semiconductor devices)

Electron mobility in the inversion layers of fully depleted SOI films

Energy Technology Data Exchange (ETDEWEB)

Zaitseva, E. G., E-mail: ZaytsevaElza@yandex.ru; Naumova, O. V.; Fomin, B. I. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

2017-04-15

The dependences of the electron mobility μ{sub eff} in the inversion layers of fully depleted double–gate silicon-on-insulator (SOI) metal–oxide–semiconductor (MOS) transistors on the density N{sub e} of induced charge carriers and temperature T are investigated at different states of the SOI film (inversion–accumulation) from the side of one of the gates. It is shown that at a high density of induced charge carriers of N{sub e} > 6 × 10{sup 12} cm{sup –2} the μeff(T) dependences allow the components of mobility μ{sub eff} that are related to scattering at surface phonons and from the film/insulator surface roughness to be distinguished. The μ{sub eff}(N{sub e}) dependences can be approximated by the power functions μ{sub eff}(N{sub e}) ∝ N{sub e}{sup −n}. The exponents n in the dependences and the dominant mechanisms of scattering of electrons induced near the interface between the SOI film and buried oxide are determined for different N{sub e} ranges and film states from the surface side.

Cometabolism of Fluoroanilines in the Presence of 4-Fluoroaniline by Ralstonia sp. FD-1

Directory of Open Access Journals (Sweden)

Wenling Cao

2015-01-01

Full Text Available A strain of Ralstonia sp. FD-1 capable of using 4-fluoroaniline (4-FA as the sole carbon and nitrogen source was investigated for its ability to utilize 4-FA isomers (2-FA, 3-FA and homologs (2,4-DFA, 3,4-DFA, and 2,3,4-TFA. Both 4-FA and 3-FA could be mineralized as the sole carbon and nitrogen source by FD-1. 2-FA, 2,4-DFA, 3,4-DFA, and 2,3,4-TFA could not be degraded by FD-1, respectively, and were selected as secondary substrates for cometabolism with 500 mg/L 4-FA as growth substrate. Bacterial growth (OD600, F− concentrations, and fluoroanilines contents were measured to determinate the degradation ability of 4-FA isomers and homologs by FD-1. FD-1 growth was inhibited by 2,4-DFA, 3,4-DFA, and 2,3,4-TFA at higher concentrations (400 mg/L, except for 2-FA. Complete fluoroanilines degradation was achieved while incomplete defluorination was characterized by the stoichiometric fluoride release indicating partial degradation but not total mineralization. When fluoroaniline was supplied to the resting cells of strain FD-1, a relatively effective removal was showed. Strain FD-1 had broadened application prospect of toxicity and low nutrition fluoroanilines wastewater.

Charge collection mechanisms in MOS/SOI transistors irradiated by energetic heavy ions

International Nuclear Information System (INIS)

Musseau, O.; Leray, J.L.; Ferlet, V.; Umbert, A.; Coic, Y.M.; Hesto, P.

1991-01-01

We have investigated with both experimental and numerical methods (Monte Carlo and drift-diffusion models) various charge collection mechanisms in NMOS/SOI transistors irradiated by single energetic heavy ions. Our physical interpretations of data emphasize the influence of various parasitic structures of the device. Two charge collection mechanisms are detailed: substrate funneling in buried MOS capacitor and latching of the parasitic bipolar transistor. Based on carrier transport and charge collection, the sensitivity of future scaled down CMOS/SOI technologies is finally discussed

Efficient fdCas9 Synthetic Endonuclease with Improved Specificity for Precise Genome Engineering

KAUST Repository

Aouida, Mustapha

2015-07-30

The Cas9 endonuclease is used for genome editing applications in diverse eukaryotic species. A high frequency of off-target activity has been reported in many cell types, limiting its applications to genome engineering, especially in genomic medicine. Here, we generated a synthetic chimeric protein between the catalytic domain of the FokI endonuclease and the catalytically inactive Cas9 protein (fdCas9). A pair of guide RNAs (gRNAs) that bind to sense and antisense strands with a defined spacer sequence range can be used to form a catalytically active dimeric fdCas9 protein and generate double-strand breaks (DSBs) within the spacer sequence. Our data demonstrate an improved catalytic activity of the fdCas9 endonuclease, with a spacer range of 15–39 nucleotides, on surrogate reporters and genomic targets. Furthermore, we observed no detectable fdCas9 activity at known Cas9 off-target sites. Taken together, our data suggest that the fdCas9 endonuclease variant is a superior platform for genome editing applications in eukaryotic systems including mammalian cells.

Efficient fdCas9 Synthetic Endonuclease with Improved Specificity for Precise Genome Engineering

KAUST Repository

Aouida, Mustapha; Eid, Ayman; Ali, Zahir; Cradick, Thomas; Lee, Ciaran; Deshmukh, Harshavardhan; Atef, Ahmed; Abu Samra, Dina Bashir Kamil; Gadhoum, Samah Zeineb; Merzaban, Jasmeen; Bao, Gang; Mahfouz, Magdy M.

2015-01-01

The Cas9 endonuclease is used for genome editing applications in diverse eukaryotic species. A high frequency of off-target activity has been reported in many cell types, limiting its applications to genome engineering, especially in genomic medicine. Here, we generated a synthetic chimeric protein between the catalytic domain of the FokI endonuclease and the catalytically inactive Cas9 protein (fdCas9). A pair of guide RNAs (gRNAs) that bind to sense and antisense strands with a defined spacer sequence range can be used to form a catalytically active dimeric fdCas9 protein and generate double-strand breaks (DSBs) within the spacer sequence. Our data demonstrate an improved catalytic activity of the fdCas9 endonuclease, with a spacer range of 15–39 nucleotides, on surrogate reporters and genomic targets. Furthermore, we observed no detectable fdCas9 activity at known Cas9 off-target sites. Taken together, our data suggest that the fdCas9 endonuclease variant is a superior platform for genome editing applications in eukaryotic systems including mammalian cells.

Advanced Liquid-Free, Piezoresistive, SOI-Based Pressure Sensors for Measurements in Harsh Environments

Directory of Open Access Journals (Sweden)

Ha-Duong Ngo

2015-08-01

Full Text Available In this paper we present and discuss two innovative liquid-free SOI sensors for pressure measurements in harsh environments. The sensors are capable of measuring pressures at high temperatures. In both concepts media separation is realized using a steel membrane. The two concepts represent two different strategies for packaging of devices for use in harsh environments and at high temperatures. The first one is a “one-sensor-one-packaging_technology” concept. The second one uses a standard flip-chip bonding technique. The first sensor is a “floating-concept”, capable of measuring pressures at temperatures up to 400 °C (constant load with an accuracy of 0.25% Full Scale Output (FSO. A push rod (mounted onto the steel membrane transfers the applied pressure directly to the center-boss membrane of the SOI-chip, which is placed on a ceramic carrier. The chip membrane is realized by Deep Reactive Ion Etching (DRIE or Bosch Process. A novel propertied chip housing employing a sliding sensor chip that is fixed during packaging by mechanical preloading via the push rod is used, thereby avoiding chip movement, and ensuring optimal push rod load transmission. The second sensor can be used up to 350 °C. The SOI chips consists of a beam with an integrated centre-boss with was realized using KOH structuring and DRIE. The SOI chip is not “floating” but bonded by using flip-chip technology. The fabricated SOI sensor chip has a bridge resistance of 3250 Ω. The realized sensor chip has a sensitivity of 18 mV/µm measured using a bridge current of 1 mA.

Advanced Liquid-Free, Piezoresistive, SOI-Based Pressure Sensors for Measurements in Harsh Environments.

Science.gov (United States)

Ngo, Ha-Duong; Mukhopadhyay, Biswaijit; Ehrmann, Oswin; Lang, Klaus-Dieter

2015-08-18

In this paper we present and discuss two innovative liquid-free SOI sensors for pressure measurements in harsh environments. The sensors are capable of measuring pressures at high temperatures. In both concepts media separation is realized using a steel membrane. The two concepts represent two different strategies for packaging of devices for use in harsh environments and at high temperatures. The first one is a "one-sensor-one-packaging_technology" concept. The second one uses a standard flip-chip bonding technique. The first sensor is a "floating-concept", capable of measuring pressures at temperatures up to 400 °C (constant load) with an accuracy of 0.25% Full Scale Output (FSO). A push rod (mounted onto the steel membrane) transfers the applied pressure directly to the center-boss membrane of the SOI-chip, which is placed on a ceramic carrier. The chip membrane is realized by Deep Reactive Ion Etching (DRIE or Bosch Process). A novel propertied chip housing employing a sliding sensor chip that is fixed during packaging by mechanical preloading via the push rod is used, thereby avoiding chip movement, and ensuring optimal push rod load transmission. The second sensor can be used up to 350 °C. The SOI chips consists of a beam with an integrated centre-boss with was realized using KOH structuring and DRIE. The SOI chip is not "floating" but bonded by using flip-chip technology. The fabricated SOI sensor chip has a bridge resistance of 3250 Ω. The realized sensor chip has a sensitivity of 18 mV/µm measured using a bridge current of 1 mA.

Ultra compact triplexing filters based on SOI nanowire AWGs

Science.gov (United States)

Jiashun, Zhang; Junming, An; Lei, Zhao; Shijiao, Song; Liangliang, Wang; Jianguang, Li; Hongjie, Wang; Yuanda, Wu; Xiongwei, Hu

2011-04-01

An ultra compact triplexing filter was designed based on a silicon on insulator (SOI) nanowire arrayed waveguide grating (AWG) for fiber-to-the-home FTTH. The simulation results revealed that the design performed well in the sense of having a good triplexing function. The designed SOI nanowire AWGs were fabricated using ultraviolet lithography and induced coupler plasma etching. The experimental results showed that the crosstalk was less than -15 dB, and the 3 dB-bandwidth was 11.04 nm. The peak wavelength output from ports a, c, and b were 1455, 1510 and 1300 nm, respectively, which deviated from our original expectations. The deviation of the wavelength is mainly caused by 45 nm width deviation of the arrayed waveguides during the course of the fabrication process and partly caused by material dispersion.

Design and fabrication of piezoresistive p-SOI Wheatstone bridges for high-temperature applications

Science.gov (United States)

Kähler, Julian; Döring, Lutz; Merzsch, Stephan; Stranz, Andrej; Waag, Andreas; Peiner, Erwin

2011-06-01

For future measurements while depth drilling, commercial sensors are required for a temperature range from -40 up to 300 °C. Conventional piezoresistive silicon sensors cannot be used at higher temperatures due to an exponential increase of leakage currents which results in a drop of the bridge voltage. A well-known procedure to expand the temperature range of silicon sensors and to reduce leakage currents is to employ Silicon-On-Insulator (SOI) instead of standard wafer material. Diffused resistors can be operated up to 200 °C, but show the same problems beyond due to leakage of the p-njunction. Our approach is to use p-SOI where resistors as well as interconnects are defined by etching down to the oxide layer. Leakage is suppressed and the temperature dependence of the bridges is very low (TCR = (2.6 +/- 0.1) μV/K@1 mA up to 400 °C). The design and process flow will be presented in detail. The characteristics of Wheatstone bridges made of silicon, n- SOI, and p-SOI will be shown for temperatures up to 300 °C. Besides, thermal FEM-simulations will be described revealing the effect of stress between silicon and the silicon-oxide layer during temperature cycling.

Extra source implantation for suppression floating-body effect in partially depleted SOI MOSFETs

International Nuclear Information System (INIS)

Chen Jing; Luo Jiexin; Wu Qingqing; Chai Zhan; Huang Xiaolu; Wei Xing; Wang Xi

2012-01-01

Silicon-on-insulate (SOI) MOSFETs offer benefits over bulk competitors for fully isolation and smaller junction capacitance. The performance of partially depleted (PD) SOI MOSFETs, though, is not good enough. Since the body is floating, the extra holes (for nMOSFETs) in this region accumulate, causing body potential arise, which of course degrades the performance of the device. How to suppress the floating-body effect becomes critical. There are mainly two ways for the goal. One is to employ body-contact structures, and the other SiGe source/drain structures. However, the former consumes extra area, not welcomed in the state-of-the-art chips design. The latter is not compatible with the traditional CMOS technology. Finding a structure both saving area and compatible technology is the most urgent for PD SOI MOSFETs. Recently, we have developed a new structure with extra heavy boron implantation in the source region for PD SOI nMOSFETs. It consumes no extra area and is also compatible with CMOS technology. The device is found to be free of kink effect in simulation, which implies the floating-body effect is greatly suppressed. In addition, the mechanisms of the kink-free, as well as the impact of different implanting conditions are interpreted.

Impact of back-gate bias on the hysteresis effect in partially depleted SOI MOSFETs

International Nuclear Information System (INIS)

Luo Jie-Xin; Chen Jing; Zhou Jian-Hua; Wu Qing-Qing; Chai Zhan; Yu Tao; Wang Xi

2012-01-01

The hysteresis effect in the output characteristics, originating from the floating body effect, has been measured in partially depleted (PD) silicon-on-insulator (SOI) MOSFETs at different back-gate biases. I D hysteresis has been developed to clarify the hysteresis characteristics. The fabricated devices show the positive and negative peaks in the I D hysteresis. The experimental results show that the I D hysteresis is sensitive to the back gate bias in 0.13-μm PD SOI MOSFETs and does not vary monotonously with the back-gate bias. Based on the steady-state Shockley-Read-Hall (SRH) recombination theory, we have successfully interpreted the impact of the back-gate bias on the hysteresis effect in PD SOI MOSFETs. (condensed matter: structural, mechanical, and thermal properties)

Performance of the INTPIX6 SOI pixel detector

International Nuclear Information System (INIS)

Arai, Y.; Miyoshi, T.; Bugiel, Sz.; Dasgupta, R.; Idzik, M.; Kapusta, P.; Turala, M.; Kucewicz, W.

2017-01-01

Characterization of the monolithic pixel detector INPTIX6, designed at KEK and fabricated in Lapis 0.2 μ  m Fully-Depleted, Low-Leakage Silicon-On-Insulator (SOI) CMOS technology, was performed. The INTPIX6 comprises a large area of 1408 × 896 integrating type squared pixels of 12 micron pitch. In this work the performance and measurement results of the prototypes produced on lower resistivity Czochralski type (CZ-n) and high resistivity floating zone (FZ-n) sensor wafers are presented. Using 241 Am radioactive source the noise of INTPIX6 was measured, showing the ENC (Equivalent Noise Charge) of about 70 e − . The resolution calculated from the FWHM of the Iron-55 X-ray peak was about 100 e − . The radiation hardness of the SOI pixel detector was also investigated. The CZ-n type INTPIX6 received a dose of 60 krad and its performance has been continuously monitored during the irradiation.

Performance of the INTPIX6 SOI pixel detector

Science.gov (United States)

Arai, Y.; Bugiel, Sz.; Dasgupta, R.; Idzik, M.; Kapusta, P.; Kucewicz, W.; Miyoshi, T.; Turala, M.

2017-01-01

Characterization of the monolithic pixel detector INPTIX6, designed at KEK and fabricated in Lapis 0.2 μ m Fully-Depleted, Low-Leakage Silicon-On-Insulator (SOI) CMOS technology, was performed. The INTPIX6 comprises a large area of 1408 × 896 integrating type squared pixels of 12 micron pitch. In this work the performance and measurement results of the prototypes produced on lower resistivity Czochralski type (CZ-n) and high resistivity floating zone (FZ-n) sensor wafers are presented. Using 241Am radioactive source the noise of INTPIX6 was measured, showing the ENC (Equivalent Noise Charge) of about 70 e-. The resolution calculated from the FWHM of the Iron-55 X-ray peak was about 100 e-. The radiation hardness of the SOI pixel detector was also investigated. The CZ-n type INTPIX6 received a dose of 60 krad and its performance has been continuously monitored during the irradiation.

Ultra compact triplexing filters based on SOI nanowire AWGs

Energy Technology Data Exchange (ETDEWEB)

Zhang Jiashun; An Junming; Zhao Lei; Song Shijiao; Wang Liangliang; Li Jianguang; Wang Hongjie; Wu Yuanda; Hu Xiongwei, E-mail: junming@red.semi.ac.cn [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

2011-04-15

An ultra compact triplexing filter was designed based on a silicon on insulator (SOI) nanowire arrayed waveguide grating (AWG) for fiber-to-the-home FTTH. The simulation results revealed that the design performed well in the sense of having a good triplexing function. The designed SOI nanowire AWGs were fabricated using ultraviolet lithography and induced coupler plasma etching. The experimental results showed that the crosstalk was less than -15 dB, and the 3 dB-bandwidth was 11.04 nm. The peak wavelength output from ports a, c, and b were 1455, 1510 and 1300 nm, respectively, which deviated from our original expectations. The deviation of the wavelength is mainly caused by 45 nm width deviation of the arrayed waveguides during the course of the fabrication process and partly caused by material dispersion. (semiconductor devices)

Ultra compact triplexing filters based on SOI nanowire AWGs

International Nuclear Information System (INIS)

Zhang Jiashun; An Junming; Zhao Lei; Song Shijiao; Wang Liangliang; Li Jianguang; Wang Hongjie; Wu Yuanda; Hu Xiongwei

2011-01-01

An ultra compact triplexing filter was designed based on a silicon on insulator (SOI) nanowire arrayed waveguide grating (AWG) for fiber-to-the-home FTTH. The simulation results revealed that the design performed well in the sense of having a good triplexing function. The designed SOI nanowire AWGs were fabricated using ultraviolet lithography and induced coupler plasma etching. The experimental results showed that the crosstalk was less than -15 dB, and the 3 dB-bandwidth was 11.04 nm. The peak wavelength output from ports a, c, and b were 1455, 1510 and 1300 nm, respectively, which deviated from our original expectations. The deviation of the wavelength is mainly caused by 45 nm width deviation of the arrayed waveguides during the course of the fabrication process and partly caused by material dispersion. (semiconductor devices)

Comparative study of SOI/Si hybrid substrates fabricated using high-dose and low-dose oxygen implantation

International Nuclear Information System (INIS)

Dong Yemin; Chen Meng; Chen Jing; Wang Xiang; Wang Xi

2004-01-01

Hybrid substrates comprising both silicon-on-insulator (SOI) and bulk Si regions have been fabricated using the technique of patterned separation by implantation of oxygen (SIMOX) with high-dose (1.5 x 10 18 cm -2 ) and low-dose ((1.5-3.5) x 10 17 cm -2 ) oxygen ions, respectively. Cross-sectional transmission electron microscopy (XTEM) was employed to examine the microstructures of the resulting materials. Experimental results indicate that the SOI/Si hybrid substrate fabricated using high-dose SIMOX is of inferior quality with very large surface height step and heavily damaged transitions between the SOI and bulk regions. However, the quality of the SOI/Si hybrid substrate is enhanced dramatically by reducing the implant dose. The defect density in transitions is reduced considerably. Moreover, the expected surface height difference does not exist and the surface is exceptionally flat. The possible mechanisms responsible for the improvements in quality are discussed

Too Fresh Is Unattractive! The Attraction of Newly Emerged Nicrophorus vespilloides Females to Odour Bouquets of Large Cadavers at Various Stages of Decomposition

OpenAIRE

von Hoermann, Christian; Steiger, Sandra; M?ller, Josef K.; Ayasse, Manfred

2013-01-01

The necrophagous burying beetle Nicrophorus vespilloides reproduces on small carcasses that are buried underground to serve as food for their offspring. Cadavers that are too large to bury have previously been postulated to be important food sources for newly emerged beetles; however, the attractiveness of distinct successive stages of decomposition were not further specified. Therefore, we investigated the potential preference of newly emerged N. vespilloides females for odour bouquets of pi...

SOI Digital Accelerometer Based on Pull-in Time Configuration

NARCIS (Netherlands)

Pakula, L.S.; Rajaraman, V.; French, P.J.

2009-01-01

The operation principle, design, fabrication and measurement results of a quasi digital accelerometer fabricated on a thin silicon-on-insulator (SOI) substrate is presented. The accelerometer features quasi-digital output, therefore eliminating the need for analogue signal conditioning. The

Performance study of double SOI image sensors

Science.gov (United States)

Miyoshi, T.; Arai, Y.; Fujita, Y.; Hamasaki, R.; Hara, K.; Ikegami, Y.; Kurachi, I.; Nishimura, R.; Ono, S.; Tauchi, K.; Tsuboyama, T.; Yamada, M.

2018-02-01

Double silicon-on-insulator (DSOI) sensors composed of two thin silicon layers and one thick silicon layer have been developed since 2011. The thick substrate consists of high resistivity silicon with p-n junctions while the thin layers are used as SOI-CMOS circuitry and as shielding to reduce the back-gate effect and crosstalk between the sensor and the circuitry. In 2014, a high-resolution integration-type pixel sensor, INTPIX8, was developed based on the DSOI concept. This device is fabricated using a Czochralski p-type (Cz-p) substrate in contrast to a single SOI (SSOI) device having a single thin silicon layer and a Float Zone p-type (FZ-p) substrate. In the present work, X-ray spectra of both DSOI and SSOI sensors were obtained using an Am-241 radiation source at four gain settings. The gain of the DSOI sensor was found to be approximately three times that of the SSOI device because the coupling capacitance is reduced by the DSOI structure. An X-ray imaging demonstration was also performed and high spatial resolution X-ray images were obtained.

A Demonstrator Analog Signal Processing Circuit in a Radiation Hard SOI-CMOS Technology

CERN Multimedia

2002-01-01

% RD-9 A Demonstrator Analog Signal Processing Circuit in a Radiation Hard SOI-CMOS Technology \\\\ \\\\Radiation hardened SOI-CMOS (Silicon-On-Insulator, Complementary Metal-Oxide- \\linebreak Semiconductor planar microelectronic circuit technology) was a likely candidate technology for mixed analog-digital signal processing electronics in experiments at the future high luminosity hadron colliders. We have studied the analog characteristics of circuit designs realized in the Thomson TCS radiation hard technologies HSOI3-HD. The feature size of this technology was 1.2 $\\mu$m. We have irradiated several devices up to 25~Mrad and 3.10$^{14}$ neutrons cm$^{-2}$. Gain, noise characteristics and speed have been measured. Irradiation introduces a degradation which in the interesting bandwidth of 0.01~MHz~-~1~MHz is less than 40\\%. \\\\ \\\\Some specific SOI phenomena have been studied in detail, like the influence on the noise spectrum of series resistence in the thin silicon film that constitutes the body of the transistor...

A technique for simultaneously improving the product of cutoff frequency–breakdown voltage and thermal stability of SOI SiGe HBT

International Nuclear Information System (INIS)

Fu Qiang; Zhang Wan-Rong; Jin Dong-Yue; Zhao Yan-Xiao; Wang Xiao

2016-01-01

The product of the cutoff frequency and breakdown voltage ( f T ×BV CEO ) is an important figure of merit (FOM) to characterize overall performance of heterojunction bipolar transistor (HBT). In this paper, an approach to introducing a thin N + -buried layer into N collector region in silicon-on-insulator (SOI) SiGe HBT to simultaneously improve the FOM of f T ×BV CEO and thermal stability is presented by using two-dimensional (2D) numerical simulation through SILVACO device simulator. Firstly, in order to show some disadvantages of the introduction of SOI structure, the effects of SOI insulation layer thickness ( T BOX ) on f T , BV CEO , and the FOM of f T ×BV CEO are presented. The introduction of SOI structure remarkably reduces the electron concentration in collector region near SOI substrate insulation layer, obviously reduces f T , slightly increases BV CEO to some extent, but ultimately degrades the FOM of f T ×BV CEO . Although the f T , BV CEO , and the FOM of f T ×BV CEO can be improved by increasing SOI insulator SiO 2 layer thickness T BOX in SOI structure, the device temperature and collector current are increased due to lower thermal conductivity of SiO 2 layer, as a result, the self-heating effect of the device is enhanced, and the thermal stability of the device is degraded. Secondly, in order to alleviate the foregoing problem of low electron concentration in collector region near SOI insulation layer and the thermal stability resulting from thick T BOX , a thin N + -buried layer is introduced into collector region to not only improve the FOM of f T ×BV CEO , but also weaken the self-heating effect of the device, thus improving the thermal stability of the device. Furthermore, the effect of the location of the thin N + -buried layer in collector region is investigated in detail. The result show that the FOM of f T ×BV CEO is improved and the device temperature decreases as the N + -buried layer shifts toward SOI substrate insulation layer

Can the exposure of Apis mellifera (Hymenoptera, Apiadae) larvae to a field concentration of thiamethoxam affect newly emerged bees?

Science.gov (United States)

Friol, Priscila Sepúlveda; Catae, Aline Fernanda; Tavares, Daiana Antonia; Malaspina, Osmar; Roat, Thaisa Cristina

2017-10-01

The use of insecticides on crops can affect non-target insects, such as bees. In addition to the adult bees, larvae can be exposed to the insecticide through contaminated floral resources. Therefore, this study aimed to investigate the possible effects of the exposure of A. mellifera larvae to a field concentration of thiamethoxam (0.001 ng/μL thiamethoxam) on larval and pupal survival and on the percentage of adult emergence. Additionally, its cytotoxic effects on the digestive cells of midgut, Malpighian tubules cells and Kenyon cells of the brain of newly emerged A. mellifera bees were analyzed. The results showed that larval exposure to this concentration of thiamethoxam did not influence larval and pupal survival or the percentage of adult bee emergence. However, this exposure caused ultra-structural alterations in the target and non-target organs of newly emerged bees. The digestive cell of bees that were exposed to the insecticide exhibited a basal labyrinth without long and thin channels and compromised mitochondria. In Malpighian tubules cells, disorganized basal labyrinth, dilated mitochondria with a deformed shape and a loss of cristae, and disorganized microvilli were observed. The results showed that the exposed bees presented Kenyon cells with alterations in the nucleus and mitochondria. These alterations indicate possible tissue degeneration, demonstrating the cytotoxicity of thiamethoxam in the target and non-target organs of newly emerged bees. Such results suggest cellular organelle impairment that can compromise cellular function of the midgut cells, Malpighian tubules cells and Kenyon cells, and, consequently, can compromise the longevity of the bees of the whole colony. Copyright © 2017 Elsevier Ltd. All rights reserved.

A graphene spin diode based on Rashba SOI

International Nuclear Information System (INIS)

Mohammadpour, Hakimeh

2015-01-01

In this paper a graphene-based two-terminal electronic device is modeled for application in spintronics. It is based on a gapped armchair graphene nanoribbon (GNR). The electron transport is considered through a scattering or channel region which is sandwiched between two lateral semi-infinite ferromagnetic leads. The two ferromagnetic leads, being half-metallic, are supposed to be in either parallel or anti-parallel magnetization. Meanwhile, the central channel region is a normal layer under the influence of the Rashba SOI, induced e.g., by the substrate. The device operation is based on modulating the (spin-) current by tuning the strength of the RSOI. The resultant current, being spin-polarized, is controlled by the RSOI in mutual interplay with the channel length. Inverting alternating bias voltage to a fully rectified spin-current is the main achievement of this paper. - Highlights: • Graphene-based electronic device is modeled with ferromagnetic leads. • The device operation is based on modulating the (spin-) current by Rashba SOI. • Inverting alternating bias voltage to rectified spin-current is the main achievement

Gate Engineering in SOI LDMOS for Device Reliability

Directory of Open Access Journals (Sweden)

Aanand

2016-01-01

Full Text Available A linearly graded doping drift region with step gate structure, used for improvement of reduced surface field (RESURF SOI LDMOS transistor performance has been simulated with 0.35µm technology in this paper. The proposed device has one poly gate and double metal gate arranged in a stepped manner, from channel to drift region. The first gate uses n+ poly (near source where as other two gates of aluminium. The first gate with thin gate oxide has good control over the channel charge. The third gate with thick gate oxide at drift region reduce gate to drain capacitance. The arrangement of second and third gates in a stepped manner in drift region spreads the electric field uniformly. Using two dimensional device simulations, the proposed SOI LDMOS is compared with conventional structure and the extended metal structure. We demonstrate that the proposed device exhibits significant enhancement in linearity, breakdown voltage, on-resistance and HCI. Double metal gate reduces the impact ionization area which helps to improve the Hot Carrier Injection effect..

On the identification of fractionally cointegrated VAR models with the F(d) condition

DEFF Research Database (Denmark)

Carlini, Federico; Santucci de Magistris, Paolo

with different fractional integration and cointegration parameters. The properties of these multiple non-identified sub-models are studied and a necessary and sufficient condition for the identification of the fractional parameters of the system is provided. The condition is named F(d). The assessment of the F(d...

Network software of FD-NET local network for the RT-11 operational system

International Nuclear Information System (INIS)

Bobyshev, A.N.; Kutsenko, V.A.; Kravtsov, A.I.; Korzhavin, A.I.; Rozhkov, A.B.; Semenov, Yu.A.; Fedotov, O.P.

1987-01-01

Description of software of FD-Net ring local network based on the ''Elektronika-60'' and ''MERA-60'' microcomputers as well as on SM-3, SM-4 and ''MERA-125'' minicomputers is given. FD-Net local network is aimed at automatization of complex and labour-consuming physical experiments carried out at the THEP. It permits to carry out simultaneous application of external devices, files and programs as well as data exchange between problems solved by different computers. The architecture of FD-Net network hardware is considered as well as a general structure of software. Certain modules of network software and their interaction with each other are described

A multi-method approach to curriculum development for in-service training in China's newly established health emergency response offices.

Directory of Open Access Journals (Sweden)

Yadong Wang

Full Text Available To describe an innovative approach for developing and implementing an in-service curriculum in China for staff of the newly established health emergency response offices (HEROs, and that is generalisable to other settings.The multi-method training needs assessment included reviews of the competency domains needed to implement the International Health Regulations (2005 as well as China's policies and emergency regulations. The review, iterative interviews and workshops with experts in government, academia, the military, and with HERO staff were reviewed critically by an expert technical advisory panel.Over 1600 participants contributed to curriculum development. Of the 18 competency domains identified as essential for HERO staff, nine were developed into priority in-service training modules to be conducted over 2.5 weeks. Experts from academia and experienced practitioners prepared and delivered each module through lectures followed by interactive problem-solving exercises and desktop simulations to help trainees apply, experiment with, and consolidate newly acquired knowledge and skills.This study adds to the emerging literature on China's enduring efforts to strengthen its emergency response capabilities since the outbreak of SARS in 2003. The multi-method approach to curriculum development in partnership with senior policy-makers, researchers, and experienced practitioners can be applied in other settings to ensure training is responsive and customized to local needs, resources and priorities. Ongoing curriculum development should reflect international standards and be coupled with the development of appropriate performance support systems at the workplace for motivating staff to apply their newly acquired knowledge and skills effectively and creatively.

A multi-method approach to curriculum development for in-service training in China's newly established health emergency response offices.

Science.gov (United States)

Wang, Yadong; Li, Xiangrui; Yuan, Yiwen; Patel, Mahomed S

2014-01-01

To describe an innovative approach for developing and implementing an in-service curriculum in China for staff of the newly established health emergency response offices (HEROs), and that is generalisable to other settings. The multi-method training needs assessment included reviews of the competency domains needed to implement the International Health Regulations (2005) as well as China's policies and emergency regulations. The review, iterative interviews and workshops with experts in government, academia, the military, and with HERO staff were reviewed critically by an expert technical advisory panel. Over 1600 participants contributed to curriculum development. Of the 18 competency domains identified as essential for HERO staff, nine were developed into priority in-service training modules to be conducted over 2.5 weeks. Experts from academia and experienced practitioners prepared and delivered each module through lectures followed by interactive problem-solving exercises and desktop simulations to help trainees apply, experiment with, and consolidate newly acquired knowledge and skills. This study adds to the emerging literature on China's enduring efforts to strengthen its emergency response capabilities since the outbreak of SARS in 2003. The multi-method approach to curriculum development in partnership with senior policy-makers, researchers, and experienced practitioners can be applied in other settings to ensure training is responsive and customized to local needs, resources and priorities. Ongoing curriculum development should reflect international standards and be coupled with the development of appropriate performance support systems at the workplace for motivating staff to apply their newly acquired knowledge and skills effectively and creatively.

Non-destructive, preclinical evaluation of root canal anatomy of human teeth with flat-panel detector volume CT (FD-VCT); Zerstoerungsfreie praeklinische Evaluation der Wurzelkanalanatomie menschlicher Zaehne mittels Flaechendetektor-Volumen-CT (FD-VCT)

Energy Technology Data Exchange (ETDEWEB)

Heidrich, G.; Hassepass, F.; Dullin, C.; Grabbe, E. [Universitaetsklinikum Goettingen, Abt. Diagnostische Radiologie (Germany); Attin, T.; Hannig, C. [Universitaetsklinikum Goettingen, Abt. fuer Zahnerhaltung, Praeventive Zahnheilkunde und Paradontologie (Germany)

2005-12-15

Purpose: Successful endodontic diagnostics and therapy call for adequate depiction of the root canal anatomy with multimodal diagnostic imaging. The aim of the present study is to evaluate visualization of the endodont with flat-panel detector volume CT (FD-VCT). Materials and methods: 13 human teeth were examined with the prototype of a FD-VCT. After data acquisition and generation of volume data sets in volume rendering technology (VRT), the findings obtained were compared to conventional X-rays and cross-section preparations of the teeth. Results: The anatomical structures of the endodont such as root canals, side canals and communications between different root canals as well as dentricles could be detected precisely with FD-VCT. The length of curved root canals was also determined accurately. The spatial resolution of the system is around 140 {mu}m. Only around 73% of the main root canals detected with FD-VCT and 87% of the roots could be visualized with conventional dental X-rays. None of the side canals, shown with FD-VCT, was detectable on conventional X-rays. In all cases the enamel and dentin of the teeth could be well delineated. No differences in image quality could be discerned between stored and freshly extracted teeth, or between primary and adult teeth. (orig.)

Generation and confinement of mobile charges in buried oxide of SOI substrates

International Nuclear Information System (INIS)

Gruber, O.; Krawiec, S.; Musseau, O.; Paillet, Ph.; Courtot-Descharles, A.

1999-01-01

We analyze the mechanisms of generation and confinement of mobile protons resulting from hydrogen annealing of SOI buried oxides. This study of the mechanisms of generation and confinement of mobile protons in the buried oxide of SOI wafers emphasizes the importance of H+ diffusion in the oxide in the formation of a mobile charge. Under specific electric field conditions the irradiation of these devices results in a pinning of this mobile charge at the bottom Si-SiO 2 interface. Ab initio calculations are in progress to investigate the possible precursor defects in the oxide and detail the mechanism for mobile proton generation and confinement. (authors)

A technique for simultaneously improving the product of cutoff frequency-breakdown voltage and thermal stability of SOI SiGe HBT

Science.gov (United States)

Fu, Qiang; Zhang, Wan-Rong; Jin, Dong-Yue; Zhao, Yan-Xiao; Wang, Xiao

2016-12-01

The product of the cutoff frequency and breakdown voltage (fT×BVCEO) is an important figure of merit (FOM) to characterize overall performance of heterojunction bipolar transistor (HBT). In this paper, an approach to introducing a thin N+-buried layer into N collector region in silicon-on-insulator (SOI) SiGe HBT to simultaneously improve the FOM of fT×BVCEO and thermal stability is presented by using two-dimensional (2D) numerical simulation through SILVACO device simulator. Firstly, in order to show some disadvantages of the introduction of SOI structure, the effects of SOI insulation layer thickness (TBOX) on fT, BVCEO, and the FOM of fT×BVCEO are presented. The introduction of SOI structure remarkably reduces the electron concentration in collector region near SOI substrate insulation layer, obviously reduces fT, slightly increases BVCEO to some extent, but ultimately degrades the FOM of fT×BVCEO. Although the fT, BVCEO, and the FOM of fT×BVCEO can be improved by increasing SOI insulator SiO2 layer thickness TBOX in SOI structure, the device temperature and collector current are increased due to lower thermal conductivity of SiO2 layer, as a result, the self-heating effect of the device is enhanced, and the thermal stability of the device is degraded. Secondly, in order to alleviate the foregoing problem of low electron concentration in collector region near SOI insulation layer and the thermal stability resulting from thick TBOX, a thin N+-buried layer is introduced into collector region to not only improve the FOM of fT×BVCEO, but also weaken the self-heating effect of the device, thus improving the thermal stability of the device. Furthermore, the effect of the location of the thin N+-buried layer in collector region is investigated in detail. The result show that the FOM of fT×BVCEO is improved and the device temperature decreases as the N+-buried layer shifts toward SOI substrate insulation layer. The approach to introducing a thin N+-buried layer

Anomalous radiation effects in fully depleted SOI MOSFETs fabricated on SIMOX

Science.gov (United States)

Li, Ying; Niu, Guofu; Cressler, J. D.; Patel, J.; Marshall, C. J.; Marshall, P. W.; Kim, H. S.; Reed, R. A.; Palmer, M. J.

2001-12-01

We investigate the proton tolerance of fully depleted silicon-on-insulator (SOI) MOSFETs with H-gate and regular-gate structural configurations. For the front-gate characteristics, the H-gate does not show the edge leakage observed in the regular-gate transistor. An anomalous kink in the back-gate linear I/sub D/-V/sub GS/ characteristics of the fully depleted SOI nFETs has been observed at high radiation doses. This kink is attributed to charged traps generated in the bandgap at the buried oxide/silicon film interface during irradiation. Extensive two-dimensional simulations with MEDICI were used to understand the physical origin of this kink. We also report unusual self-annealing effects in the devices when they are cooled to liquid nitrogen temperature.

Jean-Pierre Famose et Jean Bertsch, L’estime de soi : une controverse éducative, Paris, PUF, 2009, 192 p

OpenAIRE

Benamar, Aïcha

2015-01-01

L’ouvrage porte sur l’estime de soi, dans la sphère sociale en général et le monde éducatif en particulier. L’estime de soi est au cœur du comportement individuel, apportant confiance et assurance, permettant de progresser et in fine de réussir. Une faible estime de soi est fréquemment à l’origine de difficultés pour un individu : doutes, hésitations, ou à l’inverse vanité et arrogance. Un bon niveau d’estime de soi confère à la personnalité : capacité à s’affirmer et respect des autres. Cent...

SOI Transistor measurement techniques using body contacted transistors

International Nuclear Information System (INIS)

Worley, E.R.; Williams, R.

1989-01-01

Measurements of body contacted SOI transistors are used to isolate parameters of the back channel and island edge transistor. Properties of the edge and back channel transistor have been measured before and after X-ray irradiation (ARACOR). The unique properties of the edge transistor are shown to be a result of edge geometry as confirmed by a two dimensional transistor simulator

FdC1 and Leaf-Type Ferredoxins Channel Electrons From Photosystem I to Different Downstream Electron Acceptors.

Science.gov (United States)

Guan, Xiaoqian; Chen, Shuai; Voon, Chia Pao; Wong, Kam-Bo; Tikkanen, Mikko; Lim, Boon L

2018-01-01

Plant-type ferredoxins in Arabidopsis transfer electrons from the photosystem I to multiple redox-driven enzymes involved in the assimilation of carbon, nitrogen, and sulfur. Leaf-type ferredoxins also modulate the switch between the linear and cyclic electron routes of the photosystems. Recently, two novel ferredoxin homologs with extra C-termini were identified in the Arabidopsis genome (AtFdC1, AT4G14890; AtFdC2, AT1G32550). FdC1 was considered as an alternative electron acceptor of PSI under extreme ferredoxin-deficient conditions. Here, we showed that FdC1 could interact with some, but not all, electron acceptors of leaf-type Fds, including the ferredoxin-thioredoxin reductase (FTR), sulfite reductase (SiR), and nitrite reductase (NiR). Photoreduction assay on cytochrome c and enzyme assays confirmed its capability to receive electrons from PSI and donate electrons to the Fd-dependent SiR and NiR but not to the ferredoxin-NADP + oxidoreductase (FNR). Hence, FdC1 and leaf-type Fds may play differential roles by channeling electrons from photosystem I to different downstream electron acceptors in photosynthetic tissues. In addition, the median redox potential of FdC1 may allow it to receive electrons from FNR in non-photosynthetic plastids.

Performance of an SOI Boot-Strapped Full-Bridge MOSFET Driver, Type CHT-FBDR, under Extreme Temperatures

Science.gov (United States)

Patterson, Richard; Hammoud, Ahmad

2009-01-01

Electronic systems designed for use in deep space and planetary exploration missions are expected to encounter extreme temperatures and wide thermal swings. Silicon-based devices are limited in their wide-temperature capability and usually require extra measures, such as cooling or heating mechanisms, to provide adequate ambient temperature for proper operation. Silicon-On-Insulator (SOI) technology, on the other hand, lately has been gaining wide spread use in applications where high temperatures are encountered. Due to their inherent design, SOI-based integrated circuit chips are able to operate at temperatures higher than those of the silicon devices by virtue of reducing leakage currents, eliminating parasitic junctions, and limiting internal heating. In addition, SOI devices provide faster switching, consume less power, and offer improved radiation-tolerance. Very little data, however, exist on the performance of such devices and circuits under cryogenic temperatures. In this work, the performance of an SOI bootstrapped, full-bridge driver integrated circuit was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to establish a baseline on the functionality and to determine suitability of this device for use in space exploration missions under extreme temperature conditions.

A high efficiency lateral light emitting device on SOI

NARCIS (Netherlands)

Hoang, T.; Le Minh, P.; Holleman, J.; Zieren, V.; Goossens, M.J.; Schmitz, Jurriaan

2005-01-01

The infrared light emission of lateral p/sup +/-p-n/sup +/ diodes realized on SIMOX-SOI (separation by implantation of oxygen - silicon on insulator) substrates has been studied. The confinement of the free carriers in one dimension due to the buried oxide was suggested to be a key point to increase

Split-Capacitance and Conductance-Frequency Characteristics of SOI Wafers in Pseudo-MOSFET Configuration

KAUST Repository

Pirro, Luca

2015-09-01

Recent experimental results have demonstrated the possibility of characterizing silicon-on-insulator (SOI) wafers through split C-V measurements in the pseudo-MOSFET configuration. This paper analyzes the capacitance and conductance versus frequency characteristics. We discuss the conditions under which it is possible to extract interface trap density in bare SOI wafers. The results indicate, through both measurements and simulations, that the signature due to interface trap density is present in small-area samples, but is masked by the RC response of the channel in regular, large-area ones, making the extraction in standard samples problematic. © 1963-2012 IEEE.

Split-Capacitance and Conductance-Frequency Characteristics of SOI Wafers in Pseudo-MOSFET Configuration

KAUST Repository

Pirro, Luca; Diab, Amer El Hajj; Ionica, Irina; Ghibaudo, Gerard; Faraone, Lorenzo; Cristoloveanu, Sorin

2015-01-01

Recent experimental results have demonstrated the possibility of characterizing silicon-on-insulator (SOI) wafers through split C-V measurements in the pseudo-MOSFET configuration. This paper analyzes the capacitance and conductance versus frequency characteristics. We discuss the conditions under which it is possible to extract interface trap density in bare SOI wafers. The results indicate, through both measurements and simulations, that the signature due to interface trap density is present in small-area samples, but is masked by the RC response of the channel in regular, large-area ones, making the extraction in standard samples problematic. © 1963-2012 IEEE.

Solution to PDEs using radial basis function finite-differences (RBF-FD) on multiple GPUs

International Nuclear Information System (INIS)

Bollig, Evan F.; Flyer, Natasha; Erlebacher, Gordon

2012-01-01

This paper presents parallelization strategies for the radial basis function-finite difference (RBF-FD) method. As a generalized finite differencing scheme, the RBF-FD method functions without the need for underlying meshes to structure nodes. It offers high-order accuracy approximation and scales as O(N) per time step, with N being with the total number of nodes. To our knowledge, this is the first implementation of the RBF-FD method to leverage GPU accelerators for the solution of PDEs. Additionally, this implementation is the first to span both multiple CPUs and multiple GPUs. OpenCL kernels target the GPUs and inter-processor communication and synchronization is managed by the Message Passing Interface (MPI). We verify our implementation of the RBF-FD method with two hyperbolic PDEs on the sphere, and demonstrate up to 9x speedup on a commodity GPU with unoptimized kernel implementations. On a high performance cluster, the method achieves up to 7x speedup for the maximum problem size of 27,556 nodes.

Biology and natural enemies of Agrilus fleischeri (Coleoptera:Buprestidae), a newly emerging destructive buprestid pest in Northeast China

Science.gov (United States)

The jewel beetle Agrilus fleischeri Obenberger (Coleoptera: Buprestidae) is a newly emerging major pest of poplar trees (Populus spp.) in northeast China and is responsible for the poplar mortality throughout its distribution range. In order to determine how to manage this pest effectively, we stud...

Low-Power RF SOI-CMOS Technology for Distributed Sensor Networks

Science.gov (United States)

Dogan, Numan S.

2003-01-01

The objective of this work is to design and develop Low-Power RF SOI-CMOS Technology for Distributed Sensor Networks. We briefly report on the accomplishments in this work. We also list the impact of this work on graduate student research training/involvement.

Process Optimization for Monolithic Integration of Piezoresistive Pressure Sensor and MOSFET Amplifier with SOI Approach

International Nuclear Information System (INIS)

Kumar, V Vinoth; Dasgupta, A; Bhat, K N; KNatarajan

2006-01-01

In this paper we present the design and process optimization for fabricating piezoresitive pressure sensor and MOSFET Differential Amplifier simultaneously on the same chip. Silicon On Insulator approach has been used for realizing the membrane as well as the electronics on the same chip. The amplifier circuit has been configured in the common source connection and it has been designed with PSPICE simulation to achieve a voltage gain of about 5. In the initial set of experiments the Pressure sensor and the amplifier were fabricated on separate chips to optimize the process steps and tested in the hybrid mode. In the next set of experiments, SOI wafer having the SOI layer thickness of about 11 microns was used for realizing the membrane by anisotropic etching from the backside. The piezo-resistive pressure sensor was realized on this membrane by connecting the polysilicon resistors in the form of a Wheatstone bridge. The MOSFET source follower amplifier was also fabricated on the same SOI wafer by tailoring the process steps to suit the requirement of simultaneous fabrication of piezoresistors and the amplifier for achieving MOSFET Integrated Pressure Sensor. Reproducible results have been achieved on the SOI wafers, with the process steps developed in the laboratory. Sensitivity of 270 mV /Bar/10V, with the on chip amplifier gain of 4.5, has been achieved with this process

Too fresh is unattractive! The attraction of newly emerged Nicrophorus vespilloides females to odour bouquets of large cadavers at various stages of decomposition.

Directory of Open Access Journals (Sweden)

Christian von Hoermann

Full Text Available The necrophagous burying beetle Nicrophorus vespilloides reproduces on small carcasses that are buried underground to serve as food for their offspring. Cadavers that are too large to bury have previously been postulated to be important food sources for newly emerged beetles; however, the attractiveness of distinct successive stages of decomposition were not further specified. Therefore, we investigated the potential preference of newly emerged N. vespilloides females for odour bouquets of piglet cadavers at specific stages of decomposition. Analyses of walking tracks on a Kramer sphere revealed a significantly higher mean walking speed and, consequently, a higher mean total track length when beetles were confronted with odour plumes of the decomposition stages 'post-bloating', 'advanced decay' or 'dry remains' in comparison with the solvent control. Such a change of the walking speed of newly emerged N. vespilloides females indicates a higher motivation to locate such food sources. In contrast to less discriminating individuals this behaviour provides the advantage of not wasting time at unsuitable food sources. Furthermore, in the advanced decay stage, we registered a significantly higher preference of beetles for upwind directions to its specific odour plume when compared with the solvent control. Such a change to upwind walking behaviour increases the likelihood that a large cadaver will be quickly located. Our findings are of general importance for applied forensic entomology: newly emerged N. vespilloides females on large cadavers can and should be regarded as potential indicators of prolonged post mortem intervals as our results clearly show that they prefer emitted odour bouquets of later decomposition stages.

Silicon-on-insulator (SOI) active pixel sensors with the photosite implemented in the substrate

Science.gov (United States)

Zheng, Xinyu (Inventor); Pain, Bedabrata (Inventor)

2005-01-01

Active pixel sensors for a high quality imager are fabricated using a silicon-on-insulator (SOI) process by integrating the photodetectors on the SOI substrate and forming pixel readout transistors on the SOI thin-film. The technique can include forming silicon islands on a buried insulator layer disposed on a silicon substrate and selectively etching away the buried insulator layer over a region of the substrate to define a photodetector area. Dopants of a first conductivity type are implanted to form a signal node in the photodetector area and to form simultaneously drain/source regions for a first transistor in at least a first one of the silicon islands. Dopants of a second conductivity type are implanted to form drain/source regions for a second transistor in at least a second one of the silicon islands. Isolation rings around the photodetector also can be formed when dopants of the second conductivity type are implanted. Interconnections among the transistors and the photodetector are provided to allow signals sensed by the photodetector to be read out via the transistors formed on the silicon islands.

A low on-resistance SOI LDMOS using a trench gate and a recessed drain

International Nuclear Information System (INIS)

Ge Rui; Luo Xiaorong; Jiang Yongheng; Zhou Kun; Wang Pei; Wang Qi; Wang Yuangang; Zhang Bo; Li Zhaoji

2012-01-01

An integrable silicon-on-insulator (SOI) power lateral MOSFET with a trench gate and a recessed drain (TGRD MOSFET) is proposed to reduce the on-resistance. Both of the trench gate extended to the buried oxide (BOX) and the recessed drain reduce the specific on-resistance (R on,sp ) by widening the vertical conduction area and shortening the extra current path. The trench gate is extended as a field plate improves the electric field distribution. Breakdown voltage (BV) of 97 V and R on,sp of 0.985 mΩ·cm 2 (V GS = 5 V) are obtained for a TGRD MOSFET with 6.5 μm half-cell pitch. Compared with the trench gate SOI MOSFET (TG MOSFET) and the conventional MOSFET, R on,sp of the TGRD MOSFET decreases by 46% and 83% at the same BV, respectively. Compared with the SOI MOSFET with a trench gate and a trench drain (TGTD MOSFET), BV of the TGRD MOSFET increases by 37% at the same R on,sp . (semiconductor devices)

Fully etched apodized grating coupler on the SOI platform with −058 dB coupling efficiency

DEFF Research Database (Denmark)

Ding, Yunhong; Peucheret, Christophe; Ou, Haiyan

2014-01-01

We design and fabricate an ultrahigh coupling efficiency (CE) fully etched apodized grating coupler on the silicon- on-insulator (SOI) platform using subwavelength photonic crystals and bonded aluminum mirror. Fabrication error sensitivity andcoupling angle dependence are experimentally investiga......We design and fabricate an ultrahigh coupling efficiency (CE) fully etched apodized grating coupler on the silicon- on-insulator (SOI) platform using subwavelength photonic crystals and bonded aluminum mirror. Fabrication error sensitivity andcoupling angle dependence are experimentally...

Inhibition of cell signaling by the combi-nitrosourea FD137 in the androgen independent DU145 prostate cancer cell line.

Science.gov (United States)

Qiu, Qiyu; Dudouit, Fabienne; Banerjee, Ranjita; McNamee, James P; Jean-Claude, Bertrand J

2004-04-01

FD137, a nitrosourea appended to a quinazoline ring, was designed to simultaneously block epidermal growth factor receptor (EGFR)-mediated signaling and damage genomic DNA in refractory EGF-dependent prostate tumors. The mixed inhibition of cell signaling and DNA damage by FD137 were determined by Western blotting, RT-PCR, flow cytometry, sulforhodamine B (SRB), and comet assay. FD137 and its metabolite FD110 induced a dose-dependent increase in inhibition of EGF-stimulated EGFR autophosphorylation and this translated into blockade of c-fos gene expression in DU145 cells. FD137 induced significant levels of DNA damage and showed 150-fold greater anti-proliferative activity than BCNU, a classical nitrosourea. In contrast to BCNU, complete inhibition of EGF-induced cell transition to S-phase was observed at concentrations of FD137 as low as 3 microM. FD137 could not only damage DNA, but also significantly block downstream EGFR-mediated signaling. The superior activity of FD137 may be imputable to the combined effect of its mixed EGFR/DNA targeting properties. This novel strategy may well represent a new approach to target nitrosoureas to EGFR-overexpressing carcinomas of the prostate. Copyright 2004 Wiley-Liss, Inc.

A new SOI high-voltage device with a step-thickness drift region and its analytical model for the electric field and breakdown voltage

International Nuclear Information System (INIS)

Luo Xiaorong; Zhang Wei; Zhang Bo; Li Zhaoji; Yang Shouguo; Zhan Zhan; Fu Daping

2008-01-01

A new SOI high-voltage device with a step-thickness drift region (ST SOI) and its analytical model for the two-dimension electric field distribution and the breakdown voltage are proposed. The electric field in the drift region is modulated and that of the buried layer is enhanced by the variable thickness SOI layer, thereby resulting in the enhancement of the breakdown voltage. Based on the Poisson equation, the expression for the two-dimension electric field distribution is presented taking the modulation effect into account, from which the RESURF (REduced SURface Field) condition and the approximate but explicit expression for the maximal breakdown voltage are derived. The analytical model can explain the effects of the device parameters, such as the step height and the step length of the SOI layer, the doping concentration and the buried oxide thickness, on the electric field distribution and the breakdown voltage. The validity of this model is demonstrated by a comparison with numerical simulations. Improvement on both the breakdown voltage and the on-resistance (R on ) for the ST SOI is obtained due to the variable thickness SOI layer

Influence of edge effects on single event upset susceptibility of SOI SRAMs

International Nuclear Information System (INIS)

Gu, Song; Liu, Jie; Zhao, Fazhan; Zhang, Zhangang; Bi, Jinshun; Geng, Chao; Hou, Mingdong; Liu, Gang; Liu, Tianqi; Xi, Kai

2015-01-01

An experimental investigation of the single event upset (SEU) susceptibility for heavy ions at tilted incidence was performed. The differences of SEU cross-sections between tilted incidence and normal incidence at equivalent effective linear energy transfer were 21% and 57% for the silicon-on-insulator (SOI) static random access memories (SRAMs) of 0.5 μm and 0.18 μm feature size, respectively. The difference of SEU cross-section raised dramatically with increasing tilt angle for SOI SRAM of deep-submicron technology. The result of CRÈME-MC simulation for tilted irradiation of the sensitive volume indicates that the energy deposition spectrum has a substantial tail extending into the low energy region. The experimental results show that the influence of edge effects on SEU susceptibility cannot be ignored in particular with device scaling down

An SOI CMOS-Based Multi-Sensor MEMS Chip for Fluidic Applications.

Science.gov (United States)

Mansoor, Mohtashim; Haneef, Ibraheem; Akhtar, Suhail; Rafiq, Muhammad Aftab; De Luca, Andrea; Ali, Syed Zeeshan; Udrea, Florin

2016-11-04

An SOI CMOS multi-sensor MEMS chip, which can simultaneously measure temperature, pressure and flow rate, has been reported. The multi-sensor chip has been designed keeping in view the requirements of researchers interested in experimental fluid dynamics. The chip contains ten thermodiodes (temperature sensors), a piezoresistive-type pressure sensor and nine hot film-based flow rate sensors fabricated within the oxide layer of the SOI wafers. The silicon dioxide layers with embedded sensors are relieved from the substrate as membranes with the help of a single DRIE step after chip fabrication from a commercial CMOS foundry. Very dense sensor packing per unit area of the chip has been enabled by using technologies/processes like SOI, CMOS and DRIE. Independent apparatuses were used for the characterization of each sensor. With a drive current of 10 µA-0.1 µA, the thermodiodes exhibited sensitivities of 1.41 mV/°C-1.79 mV/°C in the range 20-300 °C. The sensitivity of the pressure sensor was 0.0686 mV/(V excit kPa) with a non-linearity of 0.25% between 0 and 69 kPa above ambient pressure. Packaged in a micro-channel, the flow rate sensor has a linearized sensitivity of 17.3 mV/(L/min) -0.1 in the tested range of 0-4.7 L/min. The multi-sensor chip can be used for simultaneous measurement of fluid pressure, temperature and flow rate in fluidic experiments and aerospace/automotive/biomedical/process industries.

Dimensional effects and scalability of Meta-Stable Dip (MSD) memory effect for 1T-DRAM SOI MOSFETs

Science.gov (United States)

Hubert, A.; Bawedin, M.; Cristoloveanu, S.; Ernst, T.

2009-12-01

The difficult scaling of bulk Dynamic Random Access Memories (DRAMs) has led to various concepts of capacitor-less single-transistor (1T) architectures based on SOI transistor floating-body effects. Amongst them, the Meta-Stable Dip RAM (MSDRAM), which is a double-gate Fully Depleted SOI transistor, exhibits attractive performances. The Meta-Stable Dip effect results from the reduced junction leakage current and the long carrier generation lifetime in thin silicon film transistors. In this study, various devices with different gate lengths, widths and silicon film thicknesses have been systematically explored, revealing the impact of transistor dimensions on the MSD effect. These experimental results are discussed and validated by two-dimensional numerical simulations. It is found that MSD is maintained for small dimensions even in standard SOI MOSFETs, although specific optimizations are expected to enhance MSDRAM performances.

Analyses of the radiation-caused characteristics change in SOI MOSFETs using field shield isolation

International Nuclear Information System (INIS)

Hirano, Yuuichi; Maeda, Shigeru; Fernandez, Warren; Iwamatsu, Toshiaki; Yamaguchi, Yasuo; Maegawa, Shigeto; Nishimura, Tadashi

1999-01-01

Reliability against radiation ia an important issue in silicon on insulator metal oxide semiconductor field effect transistors (SOI MOSFETs) used in satellites and nuclear power plants and so forth which are severely exposed to radiation. Radiation-caused characteristic change related to the isolation-edge in an irradiated environment was analyzed on SOI MOSFETs. Moreover short channel effects for an irradiated environment were investigated by simulations. It was revealed that the leakage current which was observed in local oxidation of silicon (LOCOS) isolated SOI MOSFETs was successfully suppressed by using field shield isolation. Simulated potential indicated that the potential rise at the LOCOS edge can not be seen in the case of field shield isolation edge which does not have physical isolation. Also it was found that the threshold voltage shift caused by radiation in short channel regime is severer than that in long regime channel. In transistors with a channel length of 0.18μm, a potential rise of the body region by radiation-induced trapped holes can be seen in comparison with that of 1.0μm. As a result, we must consider these effects for designing deep submicron devices used in an irradiated environment. (author)

Density dependence of electron mobility in the accumulation mode for fully depleted SOI films

Energy Technology Data Exchange (ETDEWEB)

Naumova, O. V., E-mail: naumova@isp.nsc.ru; Zaitseva, E. G.; Fomin, B. I.; Ilnitsky, M. A.; Popov, V. P. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

2015-10-15

The electron mobility µ{sub eff} in the accumulation mode is investigated for undepleted and fully depleted double-gate n{sup +}–n–n{sup +} silicon-on-insulator (SOI) metal–oxide–semiconductor field-effect transistors (MOSFET). To determine the range of possible values of the mobility and the dominant scattering mechanisms in thin-film structures, it is proposed that the field dependence of the mobility µ{sub eff} be replaced with the dependence on the density N{sub e} of induced charge carriers. It is shown that the dependences µ{sub eff}(N{sub e}) can be approximated by the power functions µ{sub eff}(N{sub e}) ∝ N{sub e}{sup -n}, where the exponent n is determined by the chargecarrier scattering mechanism as in the mobility field dependence. The values of the exponent n in the dependences µ{sub eff}(N{sub e}) are determined when the SOI-film mode near one of its surfaces varies from inversion to accumulation. The obtained results are explained from the viewpoint of the electron-density redistribution over the SOI-film thickness and changes in the scattering mechanisms.

New Insights into Fully-Depleted SOI Transistor Response During Total Dose Irradiation

International Nuclear Information System (INIS)

Burns, J.A.; Dodd, P.E.; Keast, C.L.; Schwank, J.R.; Shaneyfelt, M.R.; Wyatt, P.W.

1999-01-01

Worst-case bias configuration for total-dose testing fully-depleted SOI transistors was found to be process dependent. No evidence was found for total-dose induced snap back. These results have implications for hardness assurance testing

HARM processing techniques for MEMS and MOEMS devices using bonded SOI substrates and DRIE

Science.gov (United States)

Gormley, Colin; Boyle, Anne; Srigengan, Viji; Blackstone, Scott C.

2000-08-01

Silicon-on-Insulator (SOI) MEMS devices (1) are rapidly gaining popularity in realizing numerous solutions for MEMS, especially in the optical and inertia application fields. BCO recently developed a DRIE trench etch, utilizing the Bosch process, and refill process for high voltage dielectric isolation integrated circuits on thick SOI substrates. In this paper we present our most recently developed DRIE processes for MEMS and MOEMS devices. These advanced etch techniques are initially described and their integration with silicon bonding demonstrated. This has enabled process flows that are currently being utilized to develop optical router and filter products for fiber optics telecommunications and high precision accelerometers.

Electrical activation of solid-phase epitaxially regrown ultra-low energy boron implants in Ge preamorphised silicon and SOI

International Nuclear Information System (INIS)

Hamilton, J.J.; Collart, E.J.H.; Colombeau, B.; Jeynes, C.; Bersani, M.; Giubertoni, D.; Sharp, J.A.; Cowern, N.E.B.; Kirkby, K.J.

2005-01-01

The formation of highly activated ultra-shallow junctions (USJ) is one of the key requirements for the next generation of CMOS devices. One promising method for achieving this is the use of Ge preamorphising implants (PAI) prior to ultra-low energy B implantation. In future technology nodes, bulk silicon wafers may be supplanted by Silicon-on-Insulator (SOI), and an understanding of the Solid Phase Epitaxial (SPE) regrowth process and its correlation to dopant electrical activation in both bulk silicon and SOI is essential in order to understand the impact of this potential technology change. This kind of understanding will also enable tests of fundamental models for defect evolution and point-defect reactions at silicon/oxide interfaces. In the present work, B is implanted into Ge PAI silicon and SOI wafers with different PAI conditions and B doses, and resulting samples are annealed at various temperatures and times. Glancing-exit Rutherford Backscattering Spectrometry (RBS) is used to monitor the regrowth of the amorphous silicon, and the resulting redistribution and electrical activity of B are monitored by SIMS and Hall measurements. The results confirm the expected enhancement of regrowth velocity by B doping, and show that this velocity is otherwise independent of the substrate type and the Ge implant distribution within the amorphised layer. Hall measurements on isochronally annealed samples show that B deactivates less in SOI material than in bulk silicon, in cases where the Ge PAI end-of-range defects are close to the SOI back interface

Functional dyspepsia (FD) and non-erosive reflux disease (NERD): overlapping or discrete entities?

LENUS (Irish Health Repository)

Quigley, Eamonn M M

2012-02-03

As the incidence of both gastric cancer and peptic ulcer disease have declined, that of gastro-oesophageal reflux disease (GORD) and non-ulcer, or functional dyspepsia (FD) have reached virtually epidemic proportions. As we come to appreciate the expression of these disorders in the community, the real spectrum of each disease has become evident. FD and non-erosive reflux disease (NERD), the most prevalent manifestation of GORD, frequently overlap. Where then does GORD end and FD begin? Is it realistic, or even clinically relevant, to attempt a clear separation between these entities? These are more than issues of mere semantics; therapeutic options may be dictated by the classification of the patient as one or the other. Recent work indicates clearly that NERD is a heterogeneous disorder incorporating some patients who may well harbour subtle manifestations of oesophagitis and others who have entirely normal 24-hour pH studies. These differences may be crucial to the concept of NERD\\/FD overlap. While evidence in support of this concept is far from complete, it would appear that this overlap is most relevant to those NERD patients who do not exhibit abnormal esophageal acid exposure. These patients truly belong in the spectrum of functional gastrointestinal disorders rather than in GORD; attempts to shoe-horn these individuals into the spectrum of GORD will result in therapeutic disappointment and surgical disaster.

'BRICS without straw'? A systematic literature review of newly emerging economies' influence in global health.

Science.gov (United States)

Harmer, Andrew; Xiao, Yina; Missoni, Eduardo; Tediosi, Fabrizio

2013-04-15

Since 2010, five newly emerging economies collectively known as 'BRICS' (Brazil, India, Russia, China and South Africa) have caught the imagination, and scholarly attention, of political scientists, economists and development specialists. The prospect of a unified geopolitical bloc, consciously seeking to re-frame international (and global) health development with a new set of ideas and values, has also, if belatedly, begun to attract the attention of the global health community. But what influence, if any, do the BRICS wield in global health, and, if they do wield influence, how has that influence been conceptualized and recorded in the literature? We conducted a systematic literature review in (March-December 2012) of documents retrieved from the databases EMBASE, PubMed/Medline, Global Health, and Google Scholar, and the websites of relevant international organisations, research institutions and philanthropic organisations. The results were synthesised using a framework of influence developed for the review from the political science literature. Our initial search of databases and websites yielded 887 documents. Exclusion criteria narrowed the number of documents to 71 journal articles and 23 reports. Two researchers using an agreed set of inclusion criteria independently screened the 94 documents, leaving just 7 documents. We found just one document that provided sustained analysis of the BRICS' collective influence; the overwhelming tendency was to describe individual BRICS countries influence. Although influence was predominantly framed by BRICS countries' material capability, there were examples of institutional and ideational influence - particularly from Brazil. Individual BRICS countries were primarily 'opportunity seekers' and region mobilisers but with potential to become 'issue leaders' and region organisers. Though small in number, the written output on BRICS influence in global health has increased significantly since a similar review conducted in

78 FR 67038 - FD&C Green No. 3; Exemption From the Requirement of a Tolerance

Science.gov (United States)

2013-11-08

... petition to EPA under the Federal Food, Drug, and Cosmetic Act (FFDCA), requesting establishment of an.... FD&C Green No. 3 is not acutely toxic via the oral route in rats and dogs. In a long-term study in...). Multiple long-term studies in mice, dogs and rats fed diets containing FD&C Green No. 3 were conducted...

The role of infections and coinfections with newly identified and emerging respiratory viruses in children

Directory of Open Access Journals (Sweden)

Debiaggi Maurizia

2012-10-01

Full Text Available Abstract Acute respiratory infections are a major cause of morbidity in children both in developed and developing countries. A wide range of respiratory viruses, including respiratory syncytial virus (RSV, influenza A and B viruses, parainfluenza viruses (PIVs, adenovirus, rhinovirus (HRV, have repeatedly been detected in acute lower respiratory tract infections (LRTI in children in the past decades. However, in the last ten years thanks to progress in molecular technologies, newly discovered viruses have been identified including human Metapneumovirus (hMPV, coronaviruses NL63 (HcoV-NL63 and HKU1 (HcoV-HKU1, human Bocavirus (HBoV, new enterovirus (HEV, parechovirus (HpeV and rhinovirus (HRV strains, polyomaviruses WU (WUPyV and KI (KIPyV and the pandemic H1N1v influenza A virus. These discoveries have heavily modified previous knowledge on respiratory infections mainly highlighting that pediatric population is exposed to a variety of viruses with similar seasonal patterns. In this context establishing a causal link between a newly identified virus and the disease as well as an association between mixed infections and an increase in disease severity can be challenging. This review will present an overview of newly recognized as well as the main emerging respiratory viruses and seek to focus on the their contribution to infection and co-infection in LRTIs in childhood.

Studies on the antigenic properties of the Fd-fragment of a human G-myeloma protein (Daw)

NARCIS (Netherlands)

Zegers, Ben J.M.; Ballieux, R.E.

The present investigation deals with an immunochemical approach in studies on the structure of Fd-fragments of human immunoglobulins. Rabbits were immunized with a preparation of Fd-fragment of a human G-myeloma protein (Daw) [1]. Detailed studies on the reactions of the rabbit antiserum with a

Superconducting nanowire single-photon detectors (SNSPDs) on SOI for near-infrared range

Energy Technology Data Exchange (ETDEWEB)

Trojan, Philipp; Il' in, Konstantin; Henrich, Dagmar; Hofherr, Matthias; Doerner, Steffen; Siegel, Michael [Institut fuer Mikro- und Nanoelektronische Systeme (IMS), Karlsruher Institut fuer Technologie (KIT) (Germany); Semenov, Alexey [Institut fuer Planetenforschung, DLR, Berlin-Adlershof (Germany); Huebers, Heinz-Wilhelm [Institut fuer Planetenforschung, DLR, Berlin-Adlershof (Germany); Institut fuer Optik und Atomare Physik, Technische Universitaet Berlin (Germany)

2013-07-01

Superconducting nanowire single-photon detectors are promising devices for photon detectors with high count rates, low dark count rates and low dead times. At wavelengths beyond the visible range, the detection efficiency of today's SNSPDs drops significantly. Moreover, the low absorption in ultra-thin detector films is a limiting factor over the entire spectral range. Solving this problem requires approaches for an enhancement of the absorption range in feeding the light to the detector element. A possibility to obtain a better absorption is the use of multilayer substrate materials for photonic waveguide structures. We present results on development of superconducting nanowire single-photon detectors made from niobium nitride on silicon-on-insulator (SOI) multilayer substrates. Optical and superconducting properties of SNSPDs on SOI will be discussed and compared with the characteristics of detectors on common substrates.

The effect of gate length on SOI-MOSFETS operation | Baedi ...

African Journals Online (AJOL)

The effect of gate length on the operation of silicon-on-insulator (SOI) MOSFET structure with a layer of buried silicon oxide added to isolate the device body has been simulated. Three transistors with gate lengths of 100, 200 and 500 nm were simulated. Simulations showed that with a fixed channel length, when the gate ...

Design and optimization of different P-channel LUDMOS architectures on a 0.18 µm SOI-CMOS technology

International Nuclear Information System (INIS)

Cortés, I; Toulon, G; Morancho, F; Hugonnard-Bruyere, E; Villard, B; Toren, W J

2011-01-01

This paper focuses on the design and optimization of different power P-channel LDMOS transistors (V BR > 120 V) to be integrated in a new generation of smart-power technology based upon a 0.18 µm SOI-CMOS technology. Different drift architectures have been envisaged in this work with the purpose of optimizing the transistor static (R on-sp /V BR trade-off) and dynamic (R on × Q g ) characteristics to improve their switching performance. Conventional single-RESURF P-channel LUDMOS architectures on thin-SOI substrates show very poor R on-sp /V BR trade-off due to their low RESURF effectiveness. Alternative drift configurations such as the addition of an N-type buried layer deep inside the SOI layer or the application of the superjunction concept by alternatively placing stacked P- and N-type pillars could highly improve the RESURF effectiveness and the P-channel device switching performance

A new partial SOI-LDMOSFET with a modified buried oxide layer for improving self-heating and breakdown voltage

International Nuclear Information System (INIS)

Jamali Mahabadi, S E; Orouji, Ali A; Keshavarzi, P; Moghadam, Hamid Amini

2011-01-01

In this paper, for the first time, we propose a partial silicon-on-insulator (P-SOI) lateral double-diffused metal-oxide-semiconductor-field-effect-transistor (LDMOSFET) with a modified buried layer in order to improve breakdown voltage (BV) and self-heating effects (SHEs). The main idea of this work is to control the electric field by shaping the buried layer. With two steps introduced in the buried layer, the electric field distribution is modified. Also a P-type window introduced makes the substrate share the vertical voltage drop, leading to a high vertical BV. Moreover, four interface electric field peaks are introduced by the buried P-layer, the Si window and two steps, which modulate the electric field in the SOI layer and the substrate. Hence, a more uniform electric field is obtained; consequently, a high BV is achieved. Furthermore, the Si window creates a conduction path between the active layer and substrate and alleviates the SHE. Two-dimensional simulations show that the BV of double step partial silicon on insulator is nearly 69% higher and alleviates SHEs 17% in comparison with its single step partial SOI counterpart and nearly 265% higher and alleviate SHEs 18% in comparison with its conventional SOI counterpart

A 680 V LDMOS on a thin SOI with an improved field oxide structure and dual field plate

International Nuclear Information System (INIS)

Wang Zhongjian; Cheng Xinhong; Xia Chao; Xu Dawei; Cao Duo; Song Zhaorui; Yu Yuehui; Shen Dashen

2012-01-01

A 680 V LDMOS on a thin SOI with an improved field oxide (FOX) and dual field plate was studied experimentally. The FOX structure was formed by an 'oxidation-etch-oxidation' process, which took much less time to form, and had a low protrusion profile. A polysilicon field plate extended to the FOX and a long metal field plate was used to improve the specific on-resistance. An optimized drift region implant for linear-gradient doping was adopted to achieve a uniform lateral electric field. Using a SimBond SOI wafer with a 1.5 μm top silicon and a 3 μm buried oxide layer, CMOS compatible SOI LDMOS processes are designed and implemented successfully. The off-state breakdown voltage reached 680 V, and the specific on-resistance was 8.2 Ω·mm 2 . (semiconductor devices)

Research on SOI-based micro-resonator devices

Science.gov (United States)

Xiao, Xi; Xu, Haihua; Hu, Yingtao; Zhou, Liang; Xiong, Kang; Li, Zhiyong; Li, Yuntao; Fan, Zhongchao; Han, Weihua; Yu, Yude; Yu, Jinzhong

2010-10-01

SOI (silicon-on-insulator)-based micro-resonator is the key building block of silicon photonics, which is considered as a promising solution to alleviate the bandwidth bottleneck of on-chip interconnects. Silicon-based sub-micron waveguide, microring and microdisk devices are investigated in Institute of Semiconductors, Chinese Academy of Sciences. The main progress in recent years is presented in this talk, such as high Q factor single mode microdisk filters, compact thirdorder microring filters with the through/drop port extinctions to be ~ 30/40 dB, fast microring electro-optical switches with the switch time of 10 Gbit/s high speed microring modulators.

The Development of Computer Code for Safety Injection Tank (SIT) with Fluidic Device(FD) Blowdown Test

International Nuclear Information System (INIS)

Lee, Joo Hee; Kim, Tae Han; Choi, Hae Yun; Lee, Kwang Won; Chung, Chang Kyu

2007-01-01

Safety Injection Tanks (SITs) with the Fluidic Device (FD) of APR1400 provides a means of rapid reflooding of the core following a large break Loss Of Coolant Accident (LOCA), and keeping it covered until flow from the Safety Injection Pump (SIP) becomes available. A passive FD can provide two operation stages of a safety water injection into the RCS and allow more effective use of borated water in case of LOCA. Once a large break LOCA occurs, the system will deliver a high flow rate of cooling water for a certain period of time, and thereafter, the flow rate is reduced to a lower flow rate. The conventional computer code 'TURTLE' used to simulate the blowdown of OPR1000 SIT can not be directly applied to simulate a blowdown process of the SIT with FD. A new computer code is needed to be developed for the blowdown test evaluation of the APR1400 SIT with FD. Korea Power Engineering Company (KOPEC) has developed a new computer code to analyze the characteristics of the SIT with FD and validated the code through the comparison of the calculation results with the test results obtained by Ulchin 5 and 6 units pre-operational test and VAlve Performance Evaluation Rig (VAPER) tests performed by The Korea Atomic Energy Research Institute (KAERI)

Total dose radiation effects of pressure sensors fabricated on uni-bond-SOI materials

International Nuclear Information System (INIS)

Zhu Shiyang; Huang Yiping; Wang Jin; Li Anzhen; Shen Shaoqun; Bao Minhang

2001-01-01

Piezoresistive pressure sensors with a twin-island structure were successfully fabricated using high quality Uni-bond-SOI (On Insulator) materials. Since the piezoresistors were structured by the single crystalline silicon overlayer of the SOI wafer and were totally isolated by the buried SiO 2 , the sensors are radiation-hard. The sensitivity and the linearity of the pressure sensors keep their original values after being irradiated by 60 Co γ-rays up to 2.3 x 10 4 Gy(H 2 O). However, the offset voltage of the sensor has a slight drift, increasing with the radiation dose. The absolute value of the offset voltage deviation depends on the pressure sensor itself. For comparison, corresponding polysilicon pressure sensors were fabricated using the similar process and irradiated at the same condition

Electrical properties and radiation hardness of SOI systems with multilayer buried dielectric

International Nuclear Information System (INIS)

Barchuk, I.P.; Kilchitskaya, V.I.; Lysenko, V.S.

1997-01-01

In this work SOI structures with buried SiO 2 -Si 3 N 4 -SiO 2 layers have been fabricated by the ZMR-technique with the aim of improving the total dose radiation hardness of the buried dielectric layer. To optimize the fabrication process, buried layers were investigated by secondary ion mass spectrometry before and after the ZMR process, and the obtained results were compared with electrical measurements. It is shown that optimization of the preparation processes of the initial buried dielectric layers provides ZMR SOI structures with multilayer buried isolation, which are of high quality for both Si film interfaces. Particular attention is paid to the investigation of radiation-induced charge trapping in buried insulators. Buried isolation structures with a nitride layer exhibit significant reduction of radiation-induced positive charge as compared to classical buried SiO 2 layers produced by either the ZMR or the SIMOX technique

New insights into fully-depleted SOI transistor response during total-dose irradiation

International Nuclear Information System (INIS)

Schwank, J.R.; Shaneyfelt, M.R.; Dodd, P.E.; Burns, J.A.; Keast, C.L.; Wyatt, P.W.

1999-01-01

In this paper, we present irradiation results on 2-fully depleted processes (HYSOI6, RKSOI) that show SOI (silicon on insulator) device response can be more complicated than originally suggested by others. The major difference between the 2 process versions is that the RKSOI process incorporates special techniques to minimize pre-irradiation parasitic leakage current from trench sidewalls. Transistors were irradiated at room temperature using 10 keV X-ray source. Worst-case bias configuration for total-dose testing fully-depleted SOI transistors was found to be process dependent. It appears that the worst-case bias for HYPOI6 process is the bias that causes the largest increase in sidewall leakage. The RKSOI process shows a different response during irradiation, the transition response appears to be dominated by charge trapping in the buried oxide. These results have implications for hardness assurance testing. (A.C.)

Novel technique of source and drain engineering for dual-material double-gate (DMDG) SOI MOSFETS

Science.gov (United States)

Yadav, Himanshu; Malviya, Abhishek Kumar; Chauhan, R. K.

2018-04-01

The dual-metal dual-gate (DMDG) SOI has been used with Dual Sided Source and Drain Engineered 50nm SOI MOSFET with various high-k gate oxide. It has been scrutinized in this work to enhance its electrical performance. The proposed structure is designed by creating Dual Sided Source and Drain Modification and its characteristics are evaluated on ATLAS device simulator. The consequence of this dual sided assorted doping on source and drain side of the DMDG transistor has better leakage current immunity and heightened ION current with higher ION to IOFF Ratio. Which thereby vesting the proposed device appropriate for low power digital applications.

Development of a pixel sensor with fine space-time resolution based on SOI technology for the ILC vertex detector

Energy Technology Data Exchange (ETDEWEB)

Ono, Shun, E-mail: s-ono@champ.hep.sci.osaka-u.ac.jp [Osaka University, 1-1 Machikaneyama, Toyonaka (Japan); Togawa, Manabu; Tsuji, Ryoji; Mori, Teppei [Osaka University, 1-1 Machikaneyama, Toyonaka (Japan); Yamada, Miho; Arai, Yasuo; Tsuboyama, Toru; Hanagaki, Kazunori [Institute of Particle and Nuclear Studies, High Energy Accelerator Research Org. (KEK), 1-1 Oho, Tsukuba (Japan)

2017-02-11

We have been developing a new monolithic pixel sensor with silicon-on-insulator (SOI) technology for the International Linear Collider (ILC) vertex detector system. The SOI monolithic pixel detector is realized using standard CMOS circuits fabricated on a fully depleted sensor layer. The new SOI sensor SOFIST can store both the position and timing information of charged particles in each 20×20 μm{sup 2} pixel. The position resolution is further improved by the position weighted with the charges spread to multiple pixels. The pixel also records the hit timing with an embedded time-stamp circuit. The sensor chip has column-parallel analog-to-digital conversion (ADC) circuits and zero-suppression logic for high-speed data readout. We are designing and evaluating some prototype sensor chips for optimizing and minimizing the pixel circuit.

An SOI CMOS-Based Multi-Sensor MEMS Chip for Fluidic Applications †

Science.gov (United States)

Mansoor, Mohtashim; Haneef, Ibraheem; Akhtar, Suhail; Rafiq, Muhammad Aftab; De Luca, Andrea; Ali, Syed Zeeshan; Udrea, Florin

2016-01-01

An SOI CMOS multi-sensor MEMS chip, which can simultaneously measure temperature, pressure and flow rate, has been reported. The multi-sensor chip has been designed keeping in view the requirements of researchers interested in experimental fluid dynamics. The chip contains ten thermodiodes (temperature sensors), a piezoresistive-type pressure sensor and nine hot film-based flow rate sensors fabricated within the oxide layer of the SOI wafers. The silicon dioxide layers with embedded sensors are relieved from the substrate as membranes with the help of a single DRIE step after chip fabrication from a commercial CMOS foundry. Very dense sensor packing per unit area of the chip has been enabled by using technologies/processes like SOI, CMOS and DRIE. Independent apparatuses were used for the characterization of each sensor. With a drive current of 10 µA–0.1 µA, the thermodiodes exhibited sensitivities of 1.41 mV/°C–1.79 mV/°C in the range 20–300 °C. The sensitivity of the pressure sensor was 0.0686 mV/(Vexcit kPa) with a non-linearity of 0.25% between 0 and 69 kPa above ambient pressure. Packaged in a micro-channel, the flow rate sensor has a linearized sensitivity of 17.3 mV/(L/min)−0.1 in the tested range of 0–4.7 L/min. The multi-sensor chip can be used for simultaneous measurement of fluid pressure, temperature and flow rate in fluidic experiments and aerospace/automotive/biomedical/process industries. PMID:27827904

Méditation et pratique de soi chez Malebranche.

Directory of Open Access Journals (Sweden)

Éric Dubreucq

2004-04-01

Full Text Available Une étude des Méditations pour se disposer à l’Humilité et à la pénitence qui les replace dans le cadre des pratiques de son époque, par exemple, chez François de Sales, celles de l’oraison, de la méditation et de la contemplation, permet d’apercevoir que l’une des thèses majeures du malebranchisme, la vision en Dieu, est un effet instauré dans le destinataire par un dispositif textuel. Celui-ci tire sa puissance prescriptive de l’a priori pratique où il s’inscrit. C’est à une opération de production de soi que l’exercice spirituel donne lieu : l’analyse des quatre premières Méditations chrétiennes et métaphysiques, en particulier, montre que c’est une organisation de la substance personnelle que provoque le travail spirituel sur soi. Celui-ci consiste à déterminer le rapport à soi comme relation d’une vision attentive à une activité illuminante, par un décentrement textuel du « je » vers le « tu ».One of the major Malebranche’s assertion, that we see truth in God, is not a mere theoretical thesis. I study first the Méditations pour se disposer à l’Humilité et à la pénitence and compare them with François de Sales’ spiritual exercitations, and show that prayer, meditation and contemplation constitute the practical frameworks of this period. The text of the Méditations is an apparatus which is fit to cause an effect in its target – the self of the reader : the vision in God. The practical a priori of the meditation provides the text with prescriptive power to transform the self. Then I study the Méditations chrétiennes et métaphysiques i-iv : we see that Malebranche set his textual apparatus so that it prescribes its receiver a form of « work-on-one’s-self ». The self is here produced by the organisation of relationship between attentive vision and lighting action, and this structure is built in the self by a movement, induced by the text, which leads the self from

‘BRICS without straw’? A systematic literature review of newly emerging economies’ influence in global health

Science.gov (United States)

2013-01-01

Background Since 2010, five newly emerging economies collectively known as ‘BRICS’ (Brazil, India, Russia, China and South Africa) have caught the imagination, and scholarly attention, of political scientists, economists and development specialists. The prospect of a unified geopolitical bloc, consciously seeking to re-frame international (and global) health development with a new set of ideas and values, has also, if belatedly, begun to attract the attention of the global health community. But what influence, if any, do the BRICS wield in global health, and, if they do wield influence, how has that influence been conceptualized and recorded in the literature? Methods We conducted a systematic literature review in (March-December 2012) of documents retrieved from the databases EMBASE, PubMed/Medline, Global Health, and Google Scholar, and the websites of relevant international organisations, research institutions and philanthropic organisations. The results were synthesised using a framework of influence developed for the review from the political science literature. Results Our initial search of databases and websites yielded 887 documents. Exclusion criteria narrowed the number of documents to 71 journal articles and 23 reports. Two researchers using an agreed set of inclusion criteria independently screened the 94 documents, leaving just 7 documents. We found just one document that provided sustained analysis of the BRICS’ collective influence; the overwhelming tendency was to describe individual BRICS countries influence. Although influence was predominantly framed by BRICS countries’ material capability, there were examples of institutional and ideational influence - particularly from Brazil. Individual BRICS countries were primarily ‘opportunity seekers’ and region mobilisers but with potential to become ‘issue leaders’ and region organisers. Conclusion Though small in number, the written output on BRICS influence in global health has

Characterization of ultrathin SOI film and application to short channel MOSFETs.

Science.gov (United States)

Tang, Xiaohui; Reckinger, Nicolas; Larrieu, Guilhem; Dubois, Emmanuel; Flandre, Denis; Raskin, Jean-Pierre; Nysten, Bernard; Jonas, Alain M; Bayot, Vincent

2008-04-23

In this study, a very dilute solution (NH(4)OH:H(2)O(2):H(2)O 1:8:64 mixture) was employed to reduce the thickness of commercially available SOI wafers down to 3 nm. The etch rate is precisely controlled at 0.11 Å s(-1) based on the self-limited etching speed of the solution. The thickness uniformity of the thin film, evaluated by spectroscopic ellipsometry and by high-resolution x-ray reflectivity, remains constant through the thinning process. Moreover, the film roughness, analyzed by atomic force microscopy, slightly improves during the thinning process. The residual stress in the thin film is much smaller than that obtained by sacrificial oxidation. Mobility, measured by means of a bridge-type Hall bar on 15 nm film, is not significantly reduced compared to the value of bulk silicon. Finally, the thinned SOI wafers were used to fabricate Schottky-barrier metal-oxide-semiconductor field-effect transistors with a gate length down to 30 nm, featuring state-of-the-art current drive performance.

Hybrid III-V/SOI resonant cavity enhanced photodetector

DEFF Research Database (Denmark)

Learkthanakhachon, Supannee; Taghizadeh, Alireza; Park, Gyeong Cheol

2016-01-01

A hybrid III–V/SOI resonant-cavity-enhanced photodetector (RCE-PD) structure comprising a high-contrast grating (HCG) reflector, a hybrid grating (HG) reflector, and an air cavity between them, has been proposed and investigated. In the proposed structure, a light absorbing material is integrated...... as part of the HG reflector, enabling a very compact vertical cavity. Numerical investigations show that a quantum efficiency close to 100 % and a detection linewidth of about 1 nm can be achieved, which are desirable for wavelength division multiplexing applications. Based on these results, a hybrid RCE...

On the identification of fractionally cointegrated VAR models with the F(d) condition

DEFF Research Database (Denmark)

Santucci de Magistris, Paolo; Carlini, Federico

for any choice of the lag-length when the true cointegration rank is known. The properties of these multiple non-identified models are studied and a necessary and sufficient condition for the identification of the fractional parameters of the system is provided. The condition is named F(d......). This is a generalization of the well-known I(1) condition to the fractional case. Imposing a proper restriction on the fractional integration parameter, d, is sufficient to guarantee identification of all model parameters and the validity of the F(d) condition. The paper also illustrates the indeterminacy between...

Photonic bandpass filter characteristics of multimode SOI waveguides integrated with submicron gratings.

Science.gov (United States)

Sah, Parimal; Das, Bijoy Krishna

2018-03-20

It has been shown that a fundamental mode adiabatically launched into a multimode SOI waveguide with submicron grating offers well-defined flat-top bandpass filter characteristics in transmission. The transmitted spectral bandwidth is controlled by adjusting both waveguide and grating design parameters. The bandwidth is further narrowed down by cascading two gratings with detuned parameters. A semi-analytical model is used to analyze the filter characteristics (1500  nm≤λ≤1650  nm) of the device operating in transverse-electric polarization. The proposed devices were fabricated with an optimized set of design parameters in a SOI substrate with a device layer thickness of 250 nm. The pass bandwidth of waveguide devices integrated with single-stage gratings are measured to be ∼24  nm, whereas the device with two cascaded gratings with slightly detuned periods (ΔΛ=2  nm) exhibits a pass bandwidth down to ∼10  nm.

A 2D simulation study and characterization of a novel vertical SOI MOSFET with a smart source/body tie

International Nuclear Information System (INIS)

Lin, Jyi-Tsong; Lee, Tai-Yi; Lin, Kao-Cheng

2008-01-01

A novel vertical silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) with a smart source/body contact, SSBVMOS, is presented here for the first time. 2D simulations reveal that the SSBVMOS reduces self-heating effects, with the lattice temperature reduced by 14% and the hole temperature reduced by 25%. The SSBVMOS also eliminates the floating body effect, something that other SOI vertical MOSFETs are unable to accomplish, regardless of the thickness of the thin film. The SSBVMOS is further found to have a better drain-induced barrier lowering and subthreshold swing than either a conventional vertical MOSFET or an SOI vertical MOSFET. Moreover, these results are achieved using typical pillar heights and buried oxide thicknesses. Should future technological advances allow for lower pillars or thinner buried oxides, the SSBVMOS performance would further increase

Emergency pediatric surgery: Comparing the economic burden in specialized versus nonspecialized children's centers.

Science.gov (United States)

Kvasnovsky, Charlotte L; Lumpkins, Kimberly; Diaz, Jose J; Chun, Jeannie Y

2018-05-01

The American College of Surgeons has developed a verification program for children's surgery centers. Highly specialized hospitals may be verified as Level I, while those with fewer dedicated resources as Level II or Level III, respectively. We hypothesized that more specialized children's centers would utilize more resources. We performed a retrospective study of the Maryland Health Services Cost Review Commission (HSCRC) database from 2009 to 2013. We assessed total charge, length of stay (LOS), and charge per day for all inpatients with an emergency pediatric surgery diagnosis, controlling for severity of illness (SOI). Using published resources, we assigned theoretical level designations to each hospital. Two hospitals would qualify as Level 1 hospitals, with 4593 total emergency pediatric surgery admissions (38.5%) over the five-year study period. Charges were significantly higher for children treated at Level I hospitals (all P<0.0001). Across all SOI, children at Level I hospitals had significantly longer LOS (all P<0.0001). Hospitals defined as Level II and Level III provided the majority of care and were able to do so with shorter hospitalizations and lower charges, regardless of SOI. As care shifts towards specialized centers, this charge differential may have significant impact on future health care costs. Level III Cost Effectiveness Study. Copyright © 2018 Elsevier Inc. All rights reserved.

Charge accumulation in the buried oxide of SOI structures with the bonded Si/SiO2 interface under γ-irradiation: effect of preliminary ion implantation

International Nuclear Information System (INIS)

Naumova, O V; Fomin, B I; Ilnitsky, M A; Popov, V P

2012-01-01

In this study, we examined the effect of preliminary boron or phosphorous implantation on charge accumulation in the buried oxide of SOI-MOSFETs irradiated with γ-rays in the total dose range (D) of 10 5 –5 × 10 7 rad. The buried oxide was obtained by high-temperature thermal oxidation of Si, and it was not subjected to any implantation during the fabrication process of SOI structures. It was found that implantation with boron or phosphorous ions, used in fabrication technologies of SOI-MOSFETs, increases the concentration of precursor traps in the buried oxide of SOI structures. Unlike in the case of boron implantation, phosphorous implantation leads to an increased density of states at the Si/buried SiO 2 interface during subsequent γ-irradiation. In the γ-irradiated SOI-MOSFETs, the accumulated charge density and the density of surface states in the Si/buried oxide layer systems both vary in proportion to k i ln D. The coefficients k i for as-fabricated and ion-implanted Si/buried SiO 2 systems were evaluated. From the data obtained, it was concluded that a low density of precursor hole traps was a factor limiting the positive charge accumulation in the buried oxide of as-fabricated (non-implanted) SOI structures with the bonded Si/buried SiO 2 interface. (paper)

Physics Simulations of fluids - a brief overview of Phoenix FD

CERN Multimedia

CERN. Geneva; Nikolov, Svetlin

2014-01-01

The presentation will briefly describe the simulation and rendering of fluids with Phoenix FD, and then proceed into implementation details. We will present our methods of parallelizing the core simulation algorithms and our utilization of the GPU. We will also show how we take advantage of computational fluid dynamics specifics in order to speed up the preview and final rendering, thus achieving a quick pipeline for the creation of various visual effects. About the speakers Ivaylo Iliev is a Senior Software developer at Chaos Group and is the creator of the Phoenix FD simulator for fluid effects. He has a strong interest in physics and has worked on military simulators before focusing on visual effects. He has a Master?s degree from the Varna Technical University. Svetlin Nikolov is a Senior Software developer at Chaos Group with keen interest in physics and artificial intelligence and 7 years of experience in the software industry. He comes from a game development background with a focu...

A Temperature Sensor using a Silicon-on-Insulator (SOI) Timer for Very Wide Temperature Measurement

Science.gov (United States)

Patterson, Richard L.; Hammoud, Ahmad; Elbuluk, Malik; Culley, Dennis E.

2008-01-01

A temperature sensor based on a commercial-off-the-shelf (COTS) Silicon-on-Insulator (SOI) Timer was designed for extreme temperature applications. The sensor can operate under a wide temperature range from hot jet engine compartments to cryogenic space exploration missions. For example, in Jet Engine Distributed Control Architecture, the sensor must be able to operate at temperatures exceeding 150 C. For space missions, extremely low cryogenic temperatures need to be measured. The output of the sensor, which consisted of a stream of digitized pulses whose period was proportional to the sensed temperature, can be interfaced with a controller or a computer. The data acquisition system would then give a direct readout of the temperature through the use of a look-up table, a built-in algorithm, or a mathematical model. Because of the wide range of temperature measurement and because the sensor is made of carefully selected COTS parts, this work is directly applicable to the NASA Fundamental Aeronautics/Subsonic Fixed Wing Program--Jet Engine Distributed Engine Control Task and to the NASA Electronic Parts and Packaging (NEPP) Program. In the past, a temperature sensor was designed and built using an SOI operational amplifier, and a report was issued. This work used an SOI 555 timer as its core and is completely new work.

Pineapple Fruit Collapse: Newly Emerging Disease of Pineapple Fruit in Lampung, Indonesia

Directory of Open Access Journals (Sweden)

Joko Prasetyo

2014-03-01

Full Text Available ABSTRACT Pineapple fruit collapse: newly emerging disease of pineapple fruit in Lampung, Indonesia Recently, a new disease on pineapple fruit has occurred in Lampung. Symptoms of the disease are complex. Fruits rotted and exuded copious liquid from the inter- fruitlet tissues accompanied by gas bubbles. Open spaces were formed inside the rotten fruit. Dissection of diseased fruit showed many cavities within its sceletal fibres and bad odour was exerted from the rotten tissues. A bacterial entity was isolated  from the diseased materials. In a pathogenicity test, the isolated bacteria caused the same symptom as mentioned. In the growing-on test the crown of the heavily infected fruit  showed  heart rot symptom.  Those  indicated that the disease was pineapple fruit collapse. Both symptoms were known related to the same causal agent, Erwinia chrysanthemi (pineapple strain Dickeya sp.. In our opinion, this is the first report of pineapple fruit collapse in Indonesia.

Process optimization of a deep trench isolation structure for high voltage SOI devices

International Nuclear Information System (INIS)

Zhu Kuiying; Qian Qinsong; Zhu Jing; Sun Weifeng

2010-01-01

The process reasons for weak point formation of the deep trench on SOI wafers have been analyzed in detail. An optimized trench process is also proposed. It is found that there are two main reasons: one is over-etching laterally of the silicon on the surface of the buried oxide caused by a fringe effect; and the other is the slow growth rate of the isolation oxide in the concave silicon corner of the trench bottom. In order to improve the isolation performance of the deep trench, two feasible ways for optimizing the trench process are proposed. The improved process thickens the isolation oxide and rounds sharp silicon corners at their weak points, increasing the applied voltage by 15-20 V at the same leakage current. The proposed new trench isolation process has been verified in the foundry's 0.5-μm HV SOI technology. (semiconductor devices)

Emerging heterogeneous integrated photonic platforms on silicon

Directory of Open Access Journals (Sweden)

Fathpour Sasan

2015-05-01

Full Text Available Silicon photonics has been established as a mature and promising technology for optoelectronic integrated circuits, mostly based on the silicon-on-insulator (SOI waveguide platform. However, not all optical functionalities can be satisfactorily achieved merely based on silicon, in general, and on the SOI platform, in particular. Long-known shortcomings of silicon-based integrated photonics are optical absorption (in the telecommunication wavelengths and feasibility of electrically-injected lasers (at least at room temperature. More recently, high two-photon and free-carrier absorptions required at high optical intensities for third-order optical nonlinear effects, inherent lack of second-order optical nonlinearity, low extinction ratio of modulators based on the free-carrier plasma effect, and the loss of the buried oxide layer of the SOI waveguides at mid-infrared wavelengths have been recognized as other shortcomings. Accordingly, several novel waveguide platforms have been developing to address these shortcomings of the SOI platform. Most of these emerging platforms are based on heterogeneous integration of other material systems on silicon substrates, and in some cases silicon is integrated on other substrates. Germanium and its binary alloys with silicon, III–V compound semiconductors, silicon nitride, tantalum pentoxide and other high-index dielectric or glass materials, as well as lithium niobate are some of the materials heterogeneously integrated on silicon substrates. The materials are typically integrated by a variety of epitaxial growth, bonding, ion implantation and slicing, etch back, spin-on-glass or other techniques. These wide range of efforts are reviewed here holistically to stress that there is no pure silicon or even group IV photonics per se. Rather, the future of the field of integrated photonics appears to be one of heterogenization, where a variety of different materials and waveguide platforms will be used for

On the identification of fractionally cointegrated VAR models with the F(d) condition

DEFF Research Database (Denmark)

Carlini, Federico; Santucci de Magistris, Paolo

for any choice of the lag length, also when the true cointegration rank is known. The properties of these multiple non-identified models are studied and a necessary and sufficient condition for the identification of the fractional parameters of the system is provided. The condition is named F(d......) and it is a generalization to the fractional case of the I(1) condition in the VECM model. The assessment of the F(d) condition in the empirical analysis is relevant for the determination of the fractional parameters as well as the number of lags. The paper also illustrates the indeterminacy between the cointegration rank...

[In vitro study on intrathecal application of 5-fluoro-2'-deoxyuridine (FdUrd) for meningeal dissemination of malignant tumor].

Science.gov (United States)

Nakagawa, H; Yamada, M; Fukushima, M; Shimizu, K; Ikenaka, K

1998-09-01

To evaluate the possible clinical intrathecal use of 5-fluoro-2'-deoxyuridine (FdUrd) for malignant brain tumors, its anti-tumor activity and neurotoxicity were compared with that of 5-fluorouracil (5-FU) and 5-fluorouridine (FUrd) in vitro. FdUrd showed good tumoricidal activity against cultured mouse 203 glioma cells and rat Walker 256 carcinoma cells as well as A172 human glioblastoma cells. Daoy human medulloblastoma cells and CADO-LC4 human lung cancer cells. It also showed less toxicity for primary cultures of neurons from C57/BL6 mouse and human embryo compared to 5-FU and FUrd. Thymidine phosphorylase (TPase) and thymidine kinase (TK), key enzymes for metabolism of 5-FU derivatives, were measured in cerebrospinal fluid (CSF). TPase or TK activity was detected in the CSF of hardly any patients with malignant brain tumors including meningeal carcinomatosis. These data indicated that the CSF is a favorable site for FdUrd chemotherapy, because the rate of conversion of FdUrd injected to 5-FU would be minimal. In conclusion, FdUrd may be potentially useful for intrathecal treatment of meningeal carcinomatosis.

The founder of the Friends Foundation--Tessie Soi.

Science.gov (United States)

Topurua, Ore

2013-01-01

Tessie Soi is well known in Papua New Guinea and beyond for her work with HIV/AIDS (human immunodeficiency virus/acquired immune deficiency syndrome) patients, including through the Friends Foundation, an organization that focuses on helping families affected by HIV and AIDS. This article explores Tessie's early life and childhood, providing insight into some of the values she learned from her parents. Providing details about the Friends Foundation and the Orphan Buddy Systems program, a program Tessie established to support AIDS orphans, the article offers insight into Tessie's beliefs and compassion, simultaneously highlighting the value she places on her family.

Special Issue: Planar Fully-Depleted SOI technology

Science.gov (United States)

Allibert, F.; Hiramoto, T.; Nguyen, B. Y.

2016-03-01

We are in the era of mobile computing with smart handheld devices and remote data storage "in the cloud," with devices that are almost always on and driven by needs of high data transmission rate, instant access/connection and long battery life. With all the ambitious requirements for better performance with lower power consumption, the SoC solution must also be cost-effective in order to capture the large, highly-competitive consumer mobile and wearable markets. The Fully-Depleted SOI device/circuit is a unique option that can satisfy all these requirements and has made tremendous progress in development for various applications and adoption by foundries, integrated device manufacturers (IDM), and fabless companies in the last 3 years.

Development of an X-ray imaging system with SOI pixel detectors

Energy Technology Data Exchange (ETDEWEB)

Nishimura, Ryutaro, E-mail: ryunishi@post.kek.jp [School of High Energy Accelerator Science, SOKENDAI (The Graduate University for Advanced Studies), Oho 1-1, Tsukuba, Ibaraki 305-0801 (Japan); Arai, Yasuo; Miyoshi, Toshinobu [Institute of Particle and Nuclear Studies, High Energy Accelerator Research Organization (KEK-IPNS), Oho 1-1, Tsukuba, Ibaraki 305-0801 (Japan); Hirano, Keiichi; Kishimoto, Shunji; Hashimoto, Ryo [Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK-IMSS), Oho 1-1, Tsukuba, Ibaraki 305-0801 (Japan)

2016-09-21

An X-ray imaging system employing pixel sensors in silicon-on-insulator technology is currently under development. The system consists of an SOI pixel detector (INTPIX4) and a DAQ system based on a multi-purpose readout board (SEABAS2). To correct a bottleneck in the total throughput of the DAQ of the first prototype, parallel processing of the data taking and storing processes and a FIFO buffer were implemented for the new DAQ release. Due to these upgrades, the DAQ throughput was improved from 6 Hz (41 Mbps) to 90 Hz (613 Mbps). The first X-ray imaging system with the new DAQ software release was tested using 33.3 keV and 9.5 keV mono X-rays for three-dimensional computerized tomography. The results of these tests are presented. - Highlights: • The X-ray imaging system employing the SOI pixel sensor is currently under development. • The DAQ of the first prototype has the bottleneck in the total throughput. • The new DAQ release solve the bottleneck by parallel processing and FIFO buffer. • The new DAQ release was tested using 33.3 keV and 9.5 keV mono X-rays.

Comparison of short-circuit characteristics of trench gate and planar gate U-shaped channel SOI-LIGBTs

Science.gov (United States)

Zhang, Long; Zhu, Jing; Sun, Weifeng; Zhao, Minna; Huang, Xuequan; Chen, Jiajun; Shi, Longxing; Chen, Jian; Ding, Desheng

2017-09-01

Comparison of short-circuit (SC) characteristics of 500 V rated trench gate U-shaped channel (TGU) SOI-LIGBT and planar gate U-shaped channel (PGU) SOI-LIGBT is made for the first time in this paper. The on-state carrier profile of the TGU structure is reshaped by the dual trenches (a gate trench G1 and a hole barrier trench G2), which leads to a different conduction behavior from that of the PGU structure. The TGU structure exhibits a higher latchup immunity but a severer self-heating effect. At current density (JC) 640 A/cm2. Comparison of layouts and fabrication processes are also made between the two types of devices.

Non-destructive, preclinical evaluation of root canal anatomy of human teeth with flat-panel detector volume CT (FD-VCT)

International Nuclear Information System (INIS)

Heidrich, G.; Hassepass, F.; Dullin, C.; Grabbe, E.; Attin, T.; Hannig, C.

2005-01-01

Purpose: Successful endodontic diagnostics and therapy call for adequate depiction of the root canal anatomy with multimodal diagnostic imaging. The aim of the present study is to evaluate visualization of the endodont with flat-panel detector volume CT (FD-VCT). Materials and methods: 13 human teeth were examined with the prototype of a FD-VCT. After data acquisition and generation of volume data sets in volume rendering technology (VRT), the findings obtained were compared to conventional X-rays and cross-section preparations of the teeth. Results: The anatomical structures of the endodont such as root canals, side canals and communications between different root canals as well as dentricles could be detected precisely with FD-VCT. The length of curved root canals was also determined accurately. The spatial resolution of the system is around 140 μm. Only around 73% of the main root canals detected with FD-VCT and 87% of the roots could be visualized with conventional dental X-rays. None of the side canals, shown with FD-VCT, was detectable on conventional X-rays. In all cases the enamel and dentin of the teeth could be well delineated. No differences in image quality could be discerned between stored and freshly extracted teeth, or between primary and adult teeth. (orig.)

Inverse Design of a SOI T-junction Polarization Beamsplitter

Science.gov (United States)

Ye, Zi; Qiu, Jifang; Meng, Chong; Zheng, Li; Dong, Zhenli; Wu, Jian

2017-06-01

A SOI T-junction polarization beamsplitter with an ultra-compact footprint of 2.8×2.8μm2 is designed based on the method of inverse design. Simulated results show that the conversion efficiencies for TE and TM lights are 73.34% (simulated insertion loss of 2dB) and 80.4% (simulated insertion loss of 1.7dB) at 1550nm, respectively; the simulated extinction ratios for TE and TM lights are 19.3dB and 13.99dB at 1558nm, respectively.

A simple and rapid identification method for newly emerged porcine Deltacoronavirus with loop-mediated isothermal amplification

Directory of Open Access Journals (Sweden)

Fanfan Zhang

2017-10-01

Full Text Available Abstract Background Porcine Deltacoronavirus (PDCoV is a newly emerged enteropathogenic coronavirus that causes diarrhea and mortality in neonatal piglets. PDCoV has spread to many countries around the world, leading to significant economic losses in the pork industry. Therefore, a rapid and sensitive method for detection of PDCoV in clinical samples is urgently needed. Results In this study, we developed a single-tube one-step reverse transcription loop-mediated isothermal amplification (RT-LAMP assay specific for nucleocapsid gene to diagnose and monitor PDCoV infections. The detection limit of RT-LAMP assay was 1 × 101 copies of PDCoV, which was approximately 100-fold more sensitive than gel-based one-step reverse transcription polymerase chain reaction (RT-PCR. This assay could specifically amplify PDCoV and had no cross amplification with porcine epidemic diarrhea virus (PEDV, transmissible gastroenteritis virus (TGEV, porcine kobuvirus (PKoV, porcine astrovirus (PAstV, porcine reproductive and respiratory syndrome virus (PRRSV, classic swine fever virus (CSFV, and porcine circovirus type 2 (PCV2. By screening a panel of clinical specimens (N = 192, this method presented a similar sensitivity with nested RT-PCR and was 1–2 log more sensitive than conventional RT-PCR in detection of PDCoV. Conclusions The RT-LAMP assay established in this study is a potentially valuable tool, especially in low-resource laboratories and filed settings, for a rapid diagnosis, surveillance, and molecular epidemiology investigation of PDCoV infections. To the best of our knowledge, this is the first work for detection of newly emerged PDCoV with LAMP technology.

Juan Goytisolo: Le soi, le monde et la création littéraire

Directory of Open Access Journals (Sweden)

Pablo Romero Alegría

2010-01-01

Full Text Available Reseña de la obra: Yannick Llored. Le soi, le monde et la création littéraire. Presses Universitaires du Septentrion. Villeneuve d’Ascq (Francia. 2009. 421 págs. ISBN: 978-2-75740-0089-0

Nonlinear Parasitic Capacitance Modelling of High Voltage Power MOSFETs in Partial SOI Process

DEFF Research Database (Denmark)

Fan, Lin; Knott, Arnold; Jørgensen, Ivan Harald Holger

2016-01-01

: off-state, sub-threshold region, and on-state in the linear region. A high voltage power MOSFET is designed in a partial Silicon on Insulator (SOI) process, with the bulk as a separate terminal. 3D plots and contour plots of the capacitances versus bias voltages for the transistor summarize...

Total dose induced latch in short channel NMOS/SOI transistors

International Nuclear Information System (INIS)

Ferlet-Cavrois, V.; Quoizola, S.; Musseau, O.; Flament, O.; Leray, J.L.; Pelloie, J.L.; Raynaud, C.; Faynot, O.

1998-01-01

A latch effect induced by total dose irradiation is observed in short channel SOI transistors. This effect appears on NMOS transistors with either a fully or a partially depleted structure. It is characterized by a hysteresis behavior of the Id-Vg characteristics at high drain bias for a given critical dose. Above this dose, the authors still observe a limited leakage current at low drain bias (0.1 V), but a high conduction current at high drain bias (2 V) as the transistor should be in the off-state. The critical dose above which the latch appears strongly depends on gate length, transistor structure (fully or partially depleted), buried oxide thickness and supply voltage. Two-dimensional (2D) numerical simulations indicate that the parasitic condition is due to the latch of the back gate transistor triggered by charge trapping in the buried oxide. To avoid the latch induced by the floating body effect, different techniques can be used: doping engineering, body contacts, etc. The study of the main parameters influencing the latch (gate length, supply voltage) shows that the scaling of technologies does not necessarily imply an increased latch sensitivity. Some technological parameters like the buried oxide hardness and thickness can be used to avoid latch, even at high cumulated dose, on highly integrated SOI technologies

A novel Botrytis species is associated with a newly emergent foliar disease in cultivated Hemerocallis.

Directory of Open Access Journals (Sweden)

Robert T Grant-Downton

Full Text Available Foliar tissue samples of cultivated daylilies (Hemerocallis hybrids showing the symptoms of a newly emergent foliar disease known as 'spring sickness' were investigated for associated fungi. The cause(s of this disease remain obscure. We isolated repeatedly a fungal species which proved to be member of the genus Botrytis, based on immunological tests. DNA sequence analysis of these isolates, using several different phyogenetically informative genes, indicated that they represent a new Botrytis species, most closely related to B. elliptica (lily blight, fire blight which is a major pathogen of cultivated Lilium. The distinction of the isolates was confirmed by morphological analysis of asexual sporulating cultures. Pathogenicity tests on Hemerocallis tissues in vitro demonstrated that this new species was able to induce lesions and rapid tissue necrosis. Based on this data, we infer that this new species, described here as B. deweyae, is likely to be an important contributor to the development of 'spring sickness' symptoms. Pathogenesis may be promoted by developmental and environmental factors that favour assault by this necrotrophic pathogen. The emergence of this disease is suggested to have been triggered by breeding-related changes in cultivated hybrids, particularly the erosion of genetic diversity. Our investigation confirms that emergent plant diseases are important and deserve close monitoring, especially in intensively in-bred plants.

A two dimensional analytical modeling of surface potential in triple metal gate (TMG) fully-depleted Recessed-Source/Drain (Re-S/D) SOI MOSFET

Science.gov (United States)

Priya, Anjali; Mishra, Ram Awadh

2016-04-01

In this paper, analytical modeling of surface potential is proposed for new Triple Metal Gate (TMG) fully depleted Recessed-Source/Dain Silicon On Insulator (SOI) Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The metal with the highest work function is arranged near the source region and the lowest one near the drain. Since Recessed-Source/Drain SOI MOSFET has higher drain current as compared to conventional SOI MOSFET due to large source and drain region. The surface potential model developed by 2D Poisson's equation is verified by comparison to the simulation result of 2-dimensional ATLAS simulator. The model is compared with DMG and SMG devices and analysed for different device parameters. The ratio of metal gate length is varied to optimize the result.

300 nm bandwidth adiabatic SOI polarization splitter-rotators exploiting continuous symmetry breaking.

Science.gov (United States)

Socci, Luciano; Sorianello, Vito; Romagnoli, Marco

2015-07-27

Adiabatic polarization splitter-rotators are investigated exploiting continuous symmetry breaking thereby achieving significant device size and losses reduction in a single mask fabrication process for both SOI channel and ridge waveguides. A crosstalk lower than -25 dB is expected over 300nm bandwidth, making the device suitable for full grid CWDM and diplexer/triplexer FTTH applications at 1310, 1490 and 1550nm.

Room to high temperature measurements of flexible SOI FinFETs with sub-20-nm fins

KAUST Repository

Diab, Amer El Hajj

2014-12-01

We report the temperature dependence of the core electrical parameters and transport characteristics of a flexible version of fin field-effect transistor (FinFET) on silicon-on-insulator (SOI) with sub-20-nm wide fins and high-k/metal gate-stacks. For the first time, we characterize them from room to high temperature (150 °C) to show the impact of temperature variation on drain current, gate leakage current, and transconductance. Variation of extracted parameters, such as low-field mobility, subthreshold swing, threshold voltage, and ON-OFF current characteristics, is reported too. Direct comparison is made to a rigid version of the SOI FinFETs. The mobility degradation with temperature is mainly caused by phonon scattering mechanism. The overall excellent devices performance at high temperature after release is outlined proving the suitability of truly high-performance flexible inorganic electronics with such advanced architecture.

Electrical characteristics of SiGe-base bipolar transistors on thin-film SOI substrates

International Nuclear Information System (INIS)

Liao, Shu-Hui; Chang, Shu-Tong

2010-01-01

This paper, based on two-dimensional simulations, provides a comprehensive analysis of the electrical characteristics of the Silicon germanium (SiGe)-base bipolar transistors on thin-film siliconon-insulator (SOI) substrates. The impact of the buried oxide thickness (T OX ), the emitter width (W E ), and the lateral distance between the edge of the intrinsic base and the reach-through region (L col ) on both the AC and DC device characteristics was analyzed in detail. Regarding the DC characteristics, the simulation results suggest that a thicker T OX gives a larger base-collector breakdown voltage (BV CEO ), whereas reducing the T OX leads to an enhanced maximum electric field at the B-C junction. As for the AC characteristics, cut-off frequency (f T ) increases slightly with increasing buried oxide thickness and finally saturates to a constant value when the buried oxide thickness is about 0.15 μm. The collector-substrate capacitance (C CS ) decreases with increasing buried oxide thickness while the maximum oscillation frequency (f max ) increases with increasing buried oxide thickness. Furthermore, the impact of self-heating effects in the device was analyzed in various areas. The thermal resistance as a function of the buried oxide thickness indicates that the thermal resistance of the SiGe-base bipolar transistor on a SOI substrate is slightly higher than that of a bulk SiGe-base bipolar transistor. The thermal resistance is reduced by ∼37.89% when the emitter width is increased by a factor of 5 for a fixed buried oxide thickness of 0.1 μm. All the results can be used to design and optimize SiGe-base bipolar transistors on SOI substrates with minimum thermal resistance to enhance device performance.

SSR-CE/FD assessment of Guizhou approved sugarcane cultivars and regional materials

Science.gov (United States)

Twelve sugarcane genotypes (three cultivars and nine clones involved in regional tests) from Guizhou Province, China were analyzed using SSR-capillary electrophoresis/fluorescence detection (SSR-CE/FD) technology to construct the SSR fingerprints and assess the genetic diversity. A total of 131 DNA ...

A Lateral Differential Resonant Pressure Microsensor Based on SOI-Glass Wafer-Level Vacuum Packaging

Directory of Open Access Journals (Sweden)

Bo Xie

2015-09-01

Full Text Available This paper presents the fabrication and characterization of a resonant pressure microsensor based on SOI-glass wafer-level vacuum packaging. The SOI-based pressure microsensor consists of a pressure-sensitive diaphragm at the handle layer and two lateral resonators (electrostatic excitation and capacitive detection on the device layer as a differential setup. The resonators were vacuum packaged with a glass cap using anodic bonding and the wire interconnection was realized using a mask-free electrochemical etching approach by selectively patterning an Au film on highly topographic surfaces. The fabricated resonant pressure microsensor with dual resonators was characterized in a systematic manner, producing a quality factor higher than 10,000 (~6 months, a sensitivity of about 166 Hz/kPa and a reduced nonlinear error of 0.033% F.S. Based on the differential output, the sensitivity was increased to two times and the temperature-caused frequency drift was decreased to 25%.

A CMOS/SOI Single-input PWM Discriminator for Low-voltage Body-implanted Applications

Directory of Open Access Journals (Sweden)

Jader A. De Lima

2002-01-01

Full Text Available A CMOS/SOI circuit to decode Pulse-Width Modulation (PWM signals is presented as part of a body-implanted neurostimulator for visual prosthesis. Since encoded data is the sole input to the circuit, the decoding technique is based on a novel double-integration concept and does not require low-pass filtering. Non-overlapping control phases are internally derived from the incoming pulses and a fast-settling comparator ensures good discrimination accuracy in the megahertz range. The circuit was integrated on a 2 μm single-metal thin-film CMOS/SOI fabrication process and has an effective area of 2 mm2. Measured resolution of encoding parameter α is better than 10% at 6 MHz and VDD = 3.3 V. Idle-mode consumption is 340 μW. Pulses of frequencies up to15 MHz and α =10% can be discriminated for 2.3 V ≤ VDD ≤ 3.3 V. Such an excellent immunity to VDD deviations meets a design specification with respect to inherent coupling losses on transmitting data and power by means of a transcutaneous link.

Study of CMOS-SOI Integrated Temperature Sensing Circuits for On-Chip Temperature Monitoring.

Science.gov (United States)

Malits, Maria; Brouk, Igor; Nemirovsky, Yael

2018-05-19

This paper investigates the concepts, performance and limitations of temperature sensing circuits realized in complementary metal-oxide-semiconductor (CMOS) silicon on insulator (SOI) technology. It is shown that the MOSFET threshold voltage ( V t ) can be used to accurately measure the chip local temperature by using a V t extractor circuit. Furthermore, the circuit's performance is compared to standard circuits used to generate an accurate output current or voltage proportional to the absolute temperature, i.e., proportional-to-absolute temperature (PTAT), in terms of linearity, sensitivity, power consumption, speed, accuracy and calibration needs. It is shown that the V t extractor circuit is a better solution to determine the temperature of low power, analog and mixed-signal designs due to its accuracy, low power consumption and no need for calibration. The circuit has been designed using 1 µm partially depleted (PD) CMOS-SOI technology, and demonstrates a measurement inaccuracy of ±1.5 K across 300 K⁻500 K temperature range while consuming only 30 µW during operation.

Thin NbN film structures on SOI for SNSPD

Energy Technology Data Exchange (ETDEWEB)

Il' in, Konstantin; Kurz, Stephan; Henrich, Dagmar; Hofherr, Matthias; Siegel, Michael [IMS, KIT, Karlsruhe (Germany); Semenov, Alexei; Huebers, Heinz-Wilhelm [DLR, Berlin (Germany)

2012-07-01

Superconducting Nanowire Single-Photon Detectors (SNSPD) made from ultra-thin NbN films on sapphire demonstrate almost 100% intrinsic detection efficiency (DE). However the system DE values is less than 10% mostly limited by a very low absorptance of NbN films thinner than 5 nm. Integration of SNSPD in Si photonic circuit is a promising way to overcome this problem. We present results on optimization of technology of thin NbN film nanostructures on SOI (Silicon on Insulator) substrate used in Si photonics technology. Superconducting and normal state properties of these structures important for SNSPD development are presented and discussed.

A study of process-related electrical defects in SOI lateral bipolar transistors fabricated by ion implantation

Science.gov (United States)

Yau, J.-B.; Cai, J.; Hashemi, P.; Balakrishnan, K.; D'Emic, C.; Ning, T. H.

2018-04-01

We report a systematic study of process-related electrical defects in symmetric lateral NPN transistors on silicon-on-insulator (SOI) fabricated using ion implantation for all the doped regions. A primary objective of this study is to see if pipe defects (emitter-collector shorts caused by locally enhanced dopant diffusion) are a show stopper for such bipolar technology. Measurements of IC-VCE and Gummel currents in parallel-connected transistor chains as a function of post-fabrication rapid thermal anneal cycles allow several process-related electrical defects to be identified. They include defective emitter-base and collector-base diodes, pipe defects, and defects associated with a dopant-deficient region in an extrinsic base adjacent its intrinsic base. There is no evidence of pipe defects being a major concern in SOI lateral bipolar transistors.

The activity of carbohydrate-degrading enzymes in the development of brood and newly emerged workers and drones of the Carniolan honeybee, Apis mellifera carnica.

Science.gov (United States)

Żółtowska, Krystyna; Lipiński, Zbigniew; Łopieńska-Biernat, Elżbieta; Farjan, Marek; Dmitryjuk, Małgorzata

2012-01-01

The activity of glycogen Phosphorylase and carbohydrate hydrolyzing enzymes α-amylase, glucoamylase, trehalase, and sucrase was studied in the development of the Carniolan honey bee, Apis mellifera carnica Pollman (Hymenoptera: Apidae), from newly hatched larva to freshly emerged imago of worker and drone. Phosphorolytic degradation of glycogen was significantly stronger than hydrolytic degradation in all developmental stages. Developmental profiles of hydrolase activity were similar in both sexes of brood; high activity was found in unsealed larvae, the lowest in prepupae followed by an increase in enzymatic activity. Especially intensive increases in activity occurred in the last stage of pupae and newly emerged imago. Besides α-amylase, the activities of other enzymes were higher in drone than in worker broods. Among drones, activity of glucoamylase was particularly high, ranging from around three times higher in the youngest larvae to 13 times higher in the oldest pupae. This confirms earlier suggestions about higher rates of metabolism in drone broods than in worker broods.

Band to Band Tunneling (BBT) Induced Leakage Current Enhancement in Irradiated Fully Depleted SOI Devices

Science.gov (United States)

Adell, Phillipe C.; Barnaby, H. J.; Schrimpf, R. D.; Vermeire, B.

2007-01-01

We propose a model, validated with simulations, describing how band-to-band tunneling (BBT) affects the leakage current degradation in some irradiated fully-depleted SOI devices. The dependence of drain current on gate voltage, including the apparent transition to a high current regime is explained.

Suicide epidemics: the impact of newly emerging methods on overall suicide rates - a time trends study

Directory of Open Access Journals (Sweden)

Chang Shu-Sen

2011-05-01

Full Text Available Abstract Background The impact of newly emerging, popular suicide methods on overall rates of suicide has not previously been investigated systematically. Understanding these effects may have important implications for public health surveillance. We examine the emergence of three novel methods of suicide by gassing in the 20th and 21st centuries and determine the impact of emerging methods on overall suicide rates. Methods We studied the epidemic rises in domestic coal gas (1919-1935, England and Wales, motor vehicle exhaust gas (1975-1992, England and Wales and barbecue charcoal gas (1999-2006, Taiwan suicide using Poisson and joinpoint regression models. Joinpoint regression uses contiguous linear segments and join points (points at which trends change to describe trends in incidence. Results Epidemic increases in the use of new methods of suicide were generally associated with rises in overall suicide rates of between 23% and 71%. The recent epidemic of barbecue charcoal suicides in Taiwan was associated with the largest rise in overall rates (40-50% annual rise, whereas the smallest rise was seen for car exhaust gassing in England and Wales (7% annual rise. Joinpoint analyses were only feasible for car exhaust and charcoal burning suicides; these suggested an impact of the emergence of car exhaust suicides on overall suicide rates in both sexes in England and Wales. However there was no statistical evidence of a change in the already increasing overall suicide trends when charcoal burning suicides emerged in Taiwan, possibly due to the concurrent economic recession. Conclusions Rapid rises in the use of new sources of gas for suicide were generally associated with increases in overall suicide rates. Suicide prevention strategies should include strengthening local and national surveillance for early detection of novel suicide methods and implementation of effective media guidelines and other appropriate interventions to limit the spread of

DC Characterization of Different Advanced MOSFET Architectures

International Nuclear Information System (INIS)

Jomaah, J.; Fadlallah, M.; Ghibaudo, G.

2011-01-01

A review of recent results concerning the DC characterization of FD- and Double Gate SOI MOSFET's and FinFETs in modern CMOS technologies is given. By proper extraction techniques, distinction between the different interaction mechanisms is done. Parameter extraction conducted at room and low temperature clearly indicates that the mobility is directly impacted by shrinking the gate length in sub 100nm architectures. (author)

DOUBLE BOSS SCULPTURED DIAPHRAGM EMPLOYED PIEZORESISTIVE MEMS PRESSURE SENSOR WITH SILICON-ON-INSULATOR (SOI

Directory of Open Access Journals (Sweden)

D. SINDHANAISELVI

2017-07-01

Full Text Available This paper presents the detailed study on the measurement of low pressure sensor using double boss sculptured diaphragm of piezoresistive type with MEMS technology in flash flood level measurement. The MEMS based very thin diaphragms to sense the low pressure is analyzed by introducing supports to achieve linearity. The simulation results obtained from Intellisuite MEMS CAD design tool show that very thin diaphragms with rigid centre or boss give acceptable linearity. Further investigations on very thin diaphragms embedded with piezoresistor for low pressure measurement show that it is essential to analyse the piezoresistor placement and size of piezoresistor to achieve good sensitivity. A modified analytical modelling developed in this study for double boss sculptured diaphragm results were compared with simulated results. Further the enhancement of sensitivity is analyzed using non uniform thickness diaphragm and Silicon-On-Insulator (SOI technique. The simulation results indicate that the double boss square sculptured diaphragm with SOI layer using 0.85μm thickness yields the higher voltage sensitivity, acceptable linearity with Small Scale Deflection.

Impact of technology scaling in SOI back-channel total dose tolerance. A 2-D numerical study using a self-consistent oxide code; Effet du facteur d'echelle sur la tolerance en dose de rayonnement dans le cas du courant de fuite arriere des transistors MOS/SOI. Une etude d'un oxyde utilise un code auto coherent en deux dimensions

Energy Technology Data Exchange (ETDEWEB)

Leray, J.L.; Paillet, Ph.; Ferlet-Cavrois, V. [CEA Bruyeres le Chatel DRIF, 91 (France); Tavernier, C.; Belhaddad, K. [ISE Integrated System Engineering AG (Switzerland); Penzin, O. [ISE Integrated System Engineering Inc., San Jose (United States)

1999-07-01

A new 2-D and 3-D self-consistent code has been developed and is applied to understanding the charge trapping in SOI buried oxide causing back-channel MOS leakage in SOI transistors. Clear indications on scaling trends are obtained with respect to supply voltage and oxide thickness. (authors)

Effects of diet on growth and survival of rats fed toxic levels of tartrazine (FD & C Yellow No. 5) and sunset yellow FCF (FD & C Yellow No. 6).

Science.gov (United States)

Ershoff, B H

1977-05-01

Tests were conducted on the effects of diet on the response of immature male rats to massive doses of tartrazine (FD&C Yellow No.5) and Sunset Yellow FCF (FD&C Yellow No. 6). When incorporated at a 5% level in a stock diet, tartrazine and Sunset Yellow FCF had no grossly observable toxic effects. When fed with a purified diet, however, both tartrazine and Sunset Yellow FCF at 5% level in the diet resulted in a marked retardation in growth, an unthrifty appearance of the fur and death of 50% or more of the rats within an experimental period of 14 days. The toxic effects obtained by feeding the latter diets were counteracted by the concurrent feeding of blond psyllium seed powder, carrot root powder, alfalfa leaf meal and wheat bran. Supplements of the known nutrients had little if any protective effect. Supplements of purified cellulose were without protective effect for the rats fed tartrazine but had a moderate protective effect for those fed Sunset Yellow FCF.

Seasonal climate effects anemotaxis in newly emerged adult Anopheles gambiae Giles in Mali, West Africa.

Science.gov (United States)

Manoukis, Nicholas C; Baber, Ibrahima; Diallo, Moussa; Sogoba, Nafomon; Ribeiro, José M C

2011-01-01

The direction and magnitude of movement by the malaria vector Anopheles gambiae Giles has been of great interest to medical entomologists for over 70 years. This direction of movement is likely to be affected by many factors, from environmental conditions and stage of life history of the mosquito to the existence of attractants in the vicinity. We report here the direction of movement of newly emerged An. gambiae in nature, around the village of Donéguébougou, Mali. We assessed the direction of movement for individual mosquitoes by placing them in a novel enclosure with exit traps oriented in the direction of the cardinal and intermediate points of the compass. We consistently found predominantly Southward directions of movement during 2009 and 2010, with an additional Eastward component during the dry season and a Westward one during the wet season. Our data indicate that wind has an important effect on the direction of movement, but that this effect varied by season: Average directions of movement were downwind during the dry season and upwind during the wet season. A switch in anemotactic response suggests that the direction of movement of An. gambiae relative to the wind immediately after emergence under varying conditions of humidity should be further investigated under controlled conditions.

Seasonal climate effects anemotaxis in newly emerged adult Anopheles gambiae Giles in Mali, West Africa.

Directory of Open Access Journals (Sweden)

Nicholas C Manoukis

Full Text Available The direction and magnitude of movement by the malaria vector Anopheles gambiae Giles has been of great interest to medical entomologists for over 70 years. This direction of movement is likely to be affected by many factors, from environmental conditions and stage of life history of the mosquito to the existence of attractants in the vicinity. We report here the direction of movement of newly emerged An. gambiae in nature, around the village of Donéguébougou, Mali. We assessed the direction of movement for individual mosquitoes by placing them in a novel enclosure with exit traps oriented in the direction of the cardinal and intermediate points of the compass. We consistently found predominantly Southward directions of movement during 2009 and 2010, with an additional Eastward component during the dry season and a Westward one during the wet season. Our data indicate that wind has an important effect on the direction of movement, but that this effect varied by season: Average directions of movement were downwind during the dry season and upwind during the wet season. A switch in anemotactic response suggests that the direction of movement of An. gambiae relative to the wind immediately after emergence under varying conditions of humidity should be further investigated under controlled conditions.

Glass transition of repulsive charged rods (fd-viruses).

Science.gov (United States)

Kang, Kyongok

2014-05-14

It has recently been shown that suspensions of long and thin charged fibrous viruses (fd) form a glass at low ionic strengths. The corresponding thick electric double layers give rise to long-ranged repulsive electrostatic interactions, which lead to caging and structural arrest at concentrations far above the isotropic-nematic coexistence region. Structural arrest and freezing of the orientational texture are found to occur at the same concentration. In addition, various types of orientational textures are equilibrated below the glass transition concentration, ranging from a chiral-nematic texture with a large pitch (of about 100 μm), an X-pattern, and a tightly packed domain texture, consisting of helical domains with a relatively small pitch (of about 10 μm) and twisted boundaries. The dynamics of both particles as well as the texture are discussed, below and above the glass transition. Dynamic light scattering correlation functions exhibit two dynamical modes, where the slow mode is attributed to the elasticity of helical domains. On approach of the glass-transition concentration, the slow mode increases in amplitude, while as the amplitudes of the fast and slow mode become equal at the glass transition. Finally, interesting features of the "transient" behaviors of charged fd-rod glass are shown as the initial caging due to structural arrest, the propagation of flow originating from stress release, and the transition to the final metastable glass state. In addition to the intensity correlation function, power spectra are presented as a function of the waiting time, at the zero-frequency limit that may access to the thermal anomalities in a charged system.

Evaluation of COTS SiGe, SOI, and Mixed Signal Electronic Parts for Extreme Temperature Use in NASA Missions

Science.gov (United States)

Patterson, Richard L.; Hammoud, Ahmad

2010-01-01

The NASA Electronic Parts and Packaging (NEPP) Program sponsors a task at the NASA Glenn Research Center titled "Reliability of SiGe, SOI, and Advanced Mixed Signal Devices for Cryogenic Space Missions." In this task COTS parts and flight-like are evaluated by determining their performance under extreme temperatures and thermal cycling. The results from the evaluations are published on the NEPP website and at professional conferences in order to disseminate information to mission planners and system designers. This presentation discusses the task and the 2010 highlights and technical results. Topics include extreme temperature operation of SiGe and SOI devices, all-silicon oscillators, a floating gate voltage reference, a MEMS oscillator, extreme temperature resistors and capacitors, and a high temperature silicon operational amplifier.

Extreme group index measured and calculated in 2D SOI-based photonic crystal waveguides

DEFF Research Database (Denmark)

Lavrinenko, Andrei; Jacobsen, Rune Shim; Fage-Pedersen, Jacob

2005-01-01

lattice of air-holes in the 216-nm thick silicon layer in an SOI material. Experimental transmission spectra show a mode cut-off around 1562.5 nm for the fundamental photonic bandgap mode. In order to measure and model the group index of modes in the PCW, a time-of-flight (ToF) method is applied....

Quantification, modelling and design for signal history dependent effects in mixed-signal SOI/SOS circuits; Quantification, modelisation et conception prenant en compte les etats anterieurs des signaux dans les circuits mixtes SOI/SOS

Energy Technology Data Exchange (ETDEWEB)

Edwards, C.F.; Redman-White, W.; Bracey, M.; Tenbroek, B.M.; Lee, M.S. [Southampton Univ., Dept. of Electronics and Computer Sciences (United Kingdom); Uren, M.J.; Brunson, K.M. [DERA Farnborough, GU, Hants (United Kingdom)

1999-07-01

This paper deals with how the radiation hardness of mixed signal SOI/SOS CMOS circuits is taken into account at both architectural terms as well as the the transistor level cell designs. The primary issue is to deal with divergent transistor threshold shifts, and to understand the effects of large amplitude non stationary signals on analogue cell behaviour. (authors)

Directly Modulated and ER Enhanced Hybrid III-V/SOI DFB Laser Operating up to 20 Gb/s for Extended Reach Applications in PONs

DEFF Research Database (Denmark)

Cristofori, Valentina; Da Ros, Francesco; Chaibi, Mohamed E.

2017-01-01

We demonstrate error-free performance of an MRR filtered DML on the SOI platform over 40- and 81-km of SSW. The device operates up to 17.5 Gb/s over 81 km and 20 Gb/s over 40 km.......We demonstrate error-free performance of an MRR filtered DML on the SOI platform over 40- and 81-km of SSW. The device operates up to 17.5 Gb/s over 81 km and 20 Gb/s over 40 km....

SOI N-Channel Field Effect Transistors, CHT-NMOS80, for Extreme Temperatures

Science.gov (United States)

Patterson, Richard L.; Hammoud, Almad

2009-01-01

Extreme temperatures, both hot and cold, are anticipated in many of NASA space exploration missions as well as in terrestrial applications. One can seldom find electronics that are capable of operation under both regimes. Even for operation under one (hot or cold) temperature extreme, some thermal controls need to be introduced to provide appropriate ambient temperatures so that spacecraft on-board or field on-site electronic systems work properly. The inclusion of these controls, which comprise of heating elements and radiators along with their associated structures, adds to the complexity in the design of the system, increases cost and weight, and affects overall reliability. Thus, it would be highly desirable and very beneficial to eliminate these thermal measures in order to simplify system's design, improve efficiency, reduce development and launch costs, and improve reliability. These requirements can only be met through the development of electronic parts that are designed for proper and efficient operation under extreme temperature conditions. Silicon-on-insulator (SOI) based devices are finding more use in harsh environments due to the benefits that their inherent design offers in terms of reduced leakage currents, less power consumption, faster switching speeds, good radiation tolerance, and extreme temperature operability. Little is known, however, about their performance at cryogenic temperatures and under wide thermal swings. The objective of this work was to evaluate the performance of a new commercial-off-the-shelf (COTS) SOI parts over an extended temperature range and to determine the effects of thermal cycling on their performance. The results will establish a baseline on the suitability of such devices for use in space exploration missions under extreme temperatures, and will aid mission planners and circuit designers in the proper selection of electronic parts and circuits. The electronic part investigated in this work comprised of a CHT-NMOS80

Population Pharmacokinetics of Gemcitabine and dFdU in Pancreatic Cancer Patients Using an Optimal Design, Sparse Sampling Approach.

Science.gov (United States)

Serdjebi, Cindy; Gattacceca, Florence; Seitz, Jean-François; Fein, Francine; Gagnière, Johan; François, Eric; Abakar-Mahamat, Abakar; Deplanque, Gael; Rachid, Madani; Lacarelle, Bruno; Ciccolini, Joseph; Dahan, Laetitia

2017-06-01

Gemcitabine remains a pillar in pancreatic cancer treatment. However, toxicities are frequently observed. Dose adjustment based on therapeutic drug monitoring might help decrease the occurrence of toxicities. In this context, this work aims at describing the pharmacokinetics (PK) of gemcitabine and its metabolite dFdU in pancreatic cancer patients and at identifying the main sources of their PK variability using a population PK approach, despite a sparse sampled-population and heterogeneous administration and sampling protocols. Data from 38 patients were included in the analysis. The 3 optimal sampling times were determined using KineticPro and the population PK analysis was performed on Monolix. Available patient characteristics, including cytidine deaminase (CDA) status, were tested as covariates. Correlation between PK parameters and occurrence of severe hematological toxicities was also investigated. A two-compartment model best fitted the gemcitabine and dFdU PK data (volume of distribution and clearance for gemcitabine: V1 = 45 L and CL1 = 4.03 L/min; for dFdU: V2 = 36 L and CL2 = 0.226 L/min). Renal function was found to influence gemcitabine clearance, and body surface area to impact the volume of distribution of dFdU. However, neither CDA status nor the occurrence of toxicities was correlated to PK parameters. Despite sparse sampling and heterogeneous administration and sampling protocols, population and individual PK parameters of gemcitabine and dFdU were successfully estimated using Monolix population PK software. The estimated parameters were consistent with previously published results. Surprisingly, CDA activity did not influence gemcitabine PK, which was explained by the absence of CDA-deficient patients enrolled in the study. This work suggests that even sparse data are valuable to estimate population and individual PK parameters in patients, which will be usable to individualize the dose for an optimized benefit to risk ratio.

Blog : un journal intime comme mémoire de soi

Directory of Open Access Journals (Sweden)

Nolwenn Hénaff

2011-08-01

Full Text Available Tenir un journal est devenu, pour un individu, une manière possible de vivre, ou d’accompagner un moment de sa vie (Lejeune, 2006. Les usages sont donc multiples : construction d’une identité narrative, fixation du temps, libération du moi, introspection, outil de contrôle, de soutien, méthode d’organisation de la pensée, plaisir d’écrire. Si l’écriture papier reste la forme la plus courante du récit biographique, d’autres supports médiatiques comme la télévision ou la radio sont venus offrir de nouveaux terrains d’expérimentation de ces récits de soi. Plus récemment, l’avènement d’Internet et de ses outils simplifiés de publication ont fait émerger des formes biographiques innovantes. Pourtant, qu’il s’agisse de traverser une crise, de garder la mémoire d’une expérience forte, ou, plus ordinairement, de relater ses vacances et ses voyages, le journal se positionne avant tout, et résolument, comme un espace de liberté : on écrit quand on veut, comme on veut. Le « Souci de soi » comme dirait Foucault, l’espace dominé par les sensations, et la temporalité marquée par la notion d’instants, de moments ayant une connotation expressément personnelle sont autant d’indices révélant la pratique de l’écriture intime en ligne. Le blog apparaît à des moments de vie et accompagne souvent des tournants biographiques (ruptures, questionnement mais aussi nouveaux apprentissages, nouvelles rencontres, etc.. Nous proposons dans cet article d’analyser le blog en tant que support de mémoire personnelle et d’étudier à travers des exemples concrets les stratégies développées par les blogueurs pour se créer via ce dispositif communicationnel innovant un « espace de conserverie de soi » en ligne.Keeping a journal has become a way of live, or to moment a moment in one’s life (Lejeune, 2006. It has multiple uses: construction of a narrative identity, marking time, liberating the

Quantification, modelling and design for signal history dependent effects in mixed-signal SOI/SOS circuits

International Nuclear Information System (INIS)

Edwards, C.F.; Redman-White, W.; Bracey, M.; Tenbroek, B.M.; Lee, M.S.; Uren, M.J.; Brunson, K.M.

1999-01-01

This paper deals with how the radiation hardness of mixed signal SOI/SOS CMOS circuits is taken into account at both architectural terms as well as the the transistor level cell designs. The primary issue is to deal with divergent transistor threshold shifts, and to understand the effects of large amplitude non stationary signals on analogue cell behaviour. (authors)

Modulation of the SSTA decadal variation on ENSO events and relationships of SSTA With LOD,SOI, etc

Science.gov (United States)

Liao, D. C.; Zhou, Y. H.; Liao, X. H.

2007-01-01

Interannual and decadal components of the length of day (LOD), Southern Oscillation Index (SOI) and Sea Surface Temperature anomaly (SSTA) in Nino regions are extracted by band-pass filtering, and used for research of the modulation of the SSTA on the ENSO events. Results show that besides the interannual components, the decadal components in SSTA have strong impacts on monitoring and representing of the ENSO events. When the ENSO events are strong, the modulation of the decadal components of the SSTA tends to prolong the life-time of the events and enlarge the extreme anomalies of the SST, while the ENSO events, which are so weak that they can not be detected by the interannual components of the SSTA, can also be detected with the help of the modulation of the SSTA decadal components. The study further draws attention to the relationships of the SSTA interannual and decadal components with those of LOD, SOI, both of the sea level pressure anomalies (SLPA) and the trade wind anomalies (TWA) in tropic Pacific, and also with those of the axial components of the atmospheric angular momentum (AAM) and oceanic angular momentum (OAM). Results of the squared coherence and coherent phases among them reveal close connections with the SSTA and almost all of the parameters mentioned above on the interannual time scales, while on the decadal time scale significant connections are among the SSTA and SOI, SLPA, TWA, ?3w and ?3w+v as well, and slight weaker connections between the SSTA and LOD, ?3pib and ?3bp

Career Motivation in Newly Licensed Registered Nurses: What Makes Them Remain

Science.gov (United States)

Banks, Zarata Mann; Bailey, Jessica H.

2010-01-01

Despite vast research on newly licensed registered nurses (RNs), we don't know why some newly licensed registered nurses remain in their current jobs and others leave the nursing profession early in their career. Job satisfaction, the most significant factor emerging from the literature, plays a significant role in nurses' decisions to remain in…

Boron impurity at the Si/SiO2 interface in SOI wafers and consequences for piezoresistive MEMS devices

International Nuclear Information System (INIS)

Nafari, A; Karlen, D; Enoksson, P; Rusu, C; Svensson, K

2009-01-01

In this work, the electrical performance of piezoresistive devices fabricated on thinned SOI wafers has been investigated. Specifically, SOI wafers manufactured with the standard bond-and-etch back method (BESOI), commonly used for MEMS fabrication, have been studied. Results from electrical measurements and SIMS characterization show the presence of a boron impurity close to the buried oxide, even on unprocessed wafers. If the boron impurity overlaps with the piezoresistors on the device, it can create non-defined pn-junctions and thus allow conduction through the substrate, leading to stray connections and excessive noise. The thickness of the boron impurity can extend up to several µm, thus setting a thickness limit for the thinnest parts of a MEMS device. This work shows how this impurity can fundamentally affect the functionality of piezoresistive devices. Design rules of how to avoid this are presented

Monolithic integration of InGaAs/InP multiple quantum wells on SOI substrates for photonic devices

Science.gov (United States)

Li, Zhibo; Wang, Mengqi; Fang, Xin; Li, Yajie; Zhou, Xuliang; Yu, Hongyan; Wang, Pengfei; Wang, Wei; Pan, Jiaoqing

2018-02-01

A direct epitaxy of III-V nanowires with InGaAs/InP multiple quantum wells on v-shaped trenches patterned silicon on insulator (SOI) substrates was realized by combining the standard semiconductor fabrication process with the aspect ratio trapping growth technique. Silicon thickness as well as the width and gap of each nanowire were carefully designed to accommodate essential optical properties and appropriate growth conditions. The III-V element ingredient, crystalline quality, and surface topography of the grown nanowires were characterized by X-ray diffraction spectroscopy, photoluminescence, and scanning electron microscope. Geometrical details and chemical information of multiple quantum wells were revealed by transmission electron microscopy and energy dispersive spectroscopy. Numerical simulations confirmed that the optical guided mode supported by one single nanowire was able to propagate 50 μm with ˜30% optical loss. This proposed integration scheme opens up an alternative pathway for future photonic integrations of III-V devices on the SOI platform at nanoscale.

The Activity of Carbohydrate-Degrading Enzymes in the Development of Brood and Newly Emerged workers and Drones of the Carniolan Honeybee, Apis mellifera carnica

OpenAIRE

Żółtowska, Krystyna; Lipiński, Zbigniew; Łopieńska-Biernat, Elżbieta; Farjan, Marek; Dmitryjuk, Małgorzata

2012-01-01

The activity of glycogen Phosphorylase and carbohydrate hydrolyzing enzymes α-amylase, glucoamylase, trehalase, and sucrase was studied in the development of the Carniolan honey bee, Apis mellifera carnica Pollman (Hymenoptera: Apidae), from newly hatched larva to freshly emerged imago of worker and drone. Phosphorolytic degradation of glycogen was significantly stronger than hydrolytic degradation in all developmental stages. Developmental profiles of hydrolase activity were similar in both ...

Measuring the nematic order of suspensions of colloidal fd virus by x-ray diffraction and optical birefringence

International Nuclear Information System (INIS)

Purdy, Kirstin R.; Dogic, Zvonimir; Fraden, Seth; Ruehm, Adrian; Lurio, Lawrence; Mochrie, Simon G. J.

2003-01-01

The orientational distribution function of the nematic phase of suspensions of the semiflexible rodlike virus fd is measured by x-ray diffraction as a function of concentration and ionic strength. X-ray diffraction from a single-domain nematic phase of fd is influenced by interparticle correlations at low angle, while only intraparticle scatter contributes at high angle. Consequently, the angular distribution of the scattered intensity arises from only the single-particle orientational distribution function at high angle but it also includes spatial and orientational correlations at low angle. Experimental measurements of the orientational distribution function from both the interparticle (structure factor) and intraparticle (form factor) scattering were made to test whether the correlations present in interparticle scatter influence the measurement of the single-particle orientational distribution function. It was found that the two types of scatter yield consistent values for the nematic order parameter. It was also found that x-ray diffraction is insensitive to the orientational distribution function's precise form, and the measured angular intensity distribution is described equally well by both Onsager's trial function and a Gaussian. At high ionic strength, the order parameter S of the nematic phase coexisting with the isotropic phase approaches theoretical predictions for long semiflexible rods S=0.55, but deviations from theory increase with decreasing ionic strength. The concentration dependence of the nematic order parameter also better agrees with theoretical predictions at high ionic strength indicating that electrostatic interactions have a measurable effect on the nematic order parameter. The x-ray order parameters are shown to be proportional to the measured birefringence, and the saturation birefringence of fd is determined enabling a simple, inexpensive way to measure the order parameter. Additionally, the spatial ordering of nematic fd was probed

Insulator photocurrents: Application to dose rate hardening of CMOS/SOI integrated circuits

International Nuclear Information System (INIS)

Dupont-Nivet, E.; Coiec, Y.M.; Flament, O.; Tinel, F.

1998-01-01

Irradiation of insulators with a pulse of high energy x-rays can induce photocurrents in the interconnections of integrated circuits. The authors present, here, a new method to measure and analyze this effect together with a simple model. They also demonstrate that these insulator photocurrents have to be taken into account to obtain high levels of dose-rate hardness with CMOS on SOI integrated circuits, especially flip-flops or memory blocks of ASICs. They show that it explains some of the upsets observed in a SRAM embedded in an ASIC

Isolation, Genome Phylogenetic Analysis and In vitro Rescue of a Newly Emerging Porcine Circovirus Type 2

Directory of Open Access Journals (Sweden)

Weijuan Zhu and Xiaofeng Ren*

2012-05-01

Full Text Available Porcine circovirus type 2 (PCV2 is the major causative agent of post-weaning multisystemic wasting syndrome (PMWS. Infection by PCV2 may cause heavy losses in pig industry. In this study, we report the isolation of a newly emerging PCV2 from northeastern China. The complete genome of the PCV2 isolate named PCV2-LJR contains 1766 nucleotides and was compared with reference sequences published in GenBank followed by topology analysis of the resulting phylogenetic tree. The data indicated that the prevalent PCV2 isolates in the northeastern China had close relationship, although various genotypes of PCV2 existed. In addition, by gene recombination and transfection techniques, the PCV2 infectious clone was achieved and was able to rescue virus in vitro determined by indirect immunofluorescence assay and PCR. The obtained biological materials may be used for biological characterization of PCV2.

The Microwave Noise Behaviour Of Dual Material Gate Silicon On Insulator

Science.gov (United States)

Jafar, N.; Soin, N.

2009-06-01

This work presents the noise behaviour due to the applied Dual Material Gate (DMG) on the 75 nm n-channel Silicon On Insulator (SOI) device operating in the fully depletion mode, particularly for microwave circuit design. Influences of DMG properties namely the gate length ratio (L1:L2) and gate material workfunction difference (ΔΦM) as well as structural and operational parameters which are silicon thickness (TSi) and threshold voltage (VTH) setting variation on the noise performance were carried out on simulation basis using ATLAS 2D. Results show better noise performance in DMG as compare to the standard gate structure of FD-SOI devices. Higher VTH for DMG design is recommended for minimized noise figure in line with the advantage of inverse VTH roll-off characteristics for short channel effects suppression.

LightFD: A Lightweight Flow Detection Mechanism for Traffic Grooming in Optical Wireless DCNs

KAUST Repository

Al-Ghadhban, Amer

2018-05-05

State of the art wireless technologies have recently shown a great potential for enabling re-configurable data center network (DCN) topologies by augmenting the cabling complexity and link inflexibility of traditional wired data centers (DCs). In this paper, we propose an optical traffic grooming (TG) method for mice flows (MFs) and elephant flows (EFs) in wireless DCNs which are interconnected with wavelength division multiplexing (WDM) capable free-space optical (FSO) links. Since handling the bandwidth-hungry EFs along with delay-sensitive MFs over the same network resources have undesirable consequences, proposed TG policy handles MFs and EFs over distinctive network resources. MFs/EFs destined to the same rack are groomed into larger rack-to-rack MF/EF flows over dedicated lightpaths whose routes and capacities are jointly determined in a load balancing manner. Performance evaluations of proposed TG policy show a significant throughput improvement thanks to efficient bandwidth utilization of the WDM-FSO links. As MFs and EFs are needed to be separated, proposed TG requires expeditious flow detection mechanisms which can immediately classify EFs with very high accuracy. Since these cannot be met by existing packet-sampling and port-mirroring based solutions, we propose a fast and lightweight in-network flow detection (LightFD) mechanism with perfect accuracy. LightFD is designed as a module on the Virtual-Switch/Hypervisor, which detects EFs based on acknowledgment sequence number of flow packets. Emulation results show that LightFD can provide up to 500 times faster detection speeds than the sampling-based methods with %100 detection precision. We also demonstrate that the EF detection speed has a considerable impact on achievable EF throughput.

High performance flexible CMOS SOI FinFETs

KAUST Repository

Fahad, Hossain M.

2014-06-01

We demonstrate the first ever CMOS compatible soft etch back based high performance flexible CMOS SOI FinFETs. The move from planar to non-planar FinFETs has enabled continued scaling down to the 14 nm technology node. This has been possible due to the reduction in off-state leakage and reduced short channel effects on account of the superior electrostatic charge control of multiple gates. At the same time, flexible electronics is an exciting expansion opportunity for next generation electronics. However, a fully integrated low-cost system will need to maintain ultra-large-scale-integration density, high performance and reliability - same as today\\'s traditional electronics. Up until recently, this field has been mainly dominated by very weak performance organic electronics enabled by low temperature processes, conducive to low melting point plastics. Now however, we show the world\\'s highest performing flexible version of 3D FinFET CMOS using a state-of-the-art CMOS compatible fabrication technique for high performance ultra-mobile consumer applications with stylish design. © 2014 IEEE.

LORINE: Neutron emission Locator by SOI detectors

Energy Technology Data Exchange (ETDEWEB)

Hamrita, H.; Kondrasovs, V.; Borbotte, J. M.; Normand, S. [CEA, LIST, Laboratoire Capteurs et Architectures Electronique, F-91191 Gif-sur-Yvette Cedex (France); Saurel, N. [CEA, DAM, VALDUC, F-21120 Is sur Tille (France)

2009-07-01

The aim of this work is to develop a fast Neutron Emission Locator based on silicon on Insulator detector (LORINE). This locator can be used in the presence of significant flux of gamma radiation. LORINE was developed to locate areas containing a significant amount of actinide during the dismantling operations of equipment. From the results obtained in laboratory, we have proposed the prototype of neutron emission locator as follows: the developed design consists of 5 SOI (Silicon-on-insulator) detectors (1*1 cm{sup 2}) with their charge preamplifiers and their respective converters. All are installed on 5 faces of a boron polyethylene cube (5*5*5 cm{sup 3}). This cube plays the role of neutron shielding between the several detectors. The design must be so compact for use in glove boxes. An electronic card based on micro-controller has been made to control sensors and to send the necessary information to the computer. Location of fast neutron sources does not yet exist in a so compact design and it can be operated in the presence of very important gamma radiation flux

Collaborative Approaches in Emerging Markets

DEFF Research Database (Denmark)

Søberg, Peder Veng; Han, Yang

2011-01-01

, in order to increase innovation performance. The theoretical framework is based on theories on trust, as well as institutional theory. The findings suggest that cognition-based trust as well as affect-based trust is needed for successful innovative collaboration, however, in emerging markets affect......The paper investigates innovative collaboration undertaken by newly established foreign invested R&D units in emerging markets. In particular, the paper investigates how foreign invested newly established R&D centers in emerging markets can leverage local knowledge networks, such as universities......-based trust is more important than Westerners are used to. This is due to the different institutional backgrounds, in emerging markets and developed markets respectively....

On-chip grating coupler array on the SOI platform for fan-in/fan-out of multi-core fibers with low insertion loss and crosstalk

DEFF Research Database (Denmark)

Ding, Yunhong; Ye, Feihong; Peucheret, Christophe

2014-01-01

We design and fabricate a compact multi-core fiber fan-in/fan-out using a fully-etched grating coupler array on the SOI platform. Lowest coupling loss of 6.8 dB with 3 dB bandwidth of 48 nm and crosstalk lower than ×32 dB are demonstrated.......We design and fabricate a compact multi-core fiber fan-in/fan-out using a fully-etched grating coupler array on the SOI platform. Lowest coupling loss of 6.8 dB with 3 dB bandwidth of 48 nm and crosstalk lower than ×32 dB are demonstrated....

Improving breakdown voltage performance of SOI power device with folded drift region

Science.gov (United States)

Qi, Li; Hai-Ou, Li; Ping-Jiang, Huang; Gong-Li, Xiao; Nian-Jiong, Yang

2016-07-01

A novel silicon-on-insulator (SOI) high breakdown voltage (BV) power device with interlaced dielectric trenches (IDT) and N/P pillars is proposed. In the studied structure, the drift region is folded by IDT embedded in the active layer, which results in an increase of length of ionization integral remarkably. The crowding phenomenon of electric field in the corner of IDT is relieved by the N/P pillars. Both traits improve two key factors of BV, the ionization integral length and electric field magnitude, and thus BV is significantly enhanced. The electric field in the dielectric layer is enhanced and a major portion of bias is borne by the oxide layer due to the accumulation of inverse charges (holes) at the corner of IDT. The average value of the lateral electric field of the proposed device reaches 60 V/μm with a 10 μm drift length, which increases by 200% in comparison to the conventional SOI LDMOS, resulting in a breakdown voltage of 607 V. Project supported by the Guangxi Natural Science Foundation of China (Grant Nos. 2013GXNSFAA019335 and 2015GXNSFAA139300), Guangxi Experiment Center of Information Science of China (Grant No. YB1406), Guangxi Key Laboratory of Wireless Wideband Communication and Signal Processing of China, Key Laboratory of Cognitive Radio and Information Processing (Grant No. GXKL061505), Guangxi Key Laboratory of Automobile Components and Vehicle Technology of China (Grant No. 2014KFMS04), and the National Natural Science Foundation of China (Grant Nos. 61361011, 61274077, and 61464003).

A New Nonlinear Model of Body Resistance in Nanometer PD SOI MOSFETs

Directory of Open Access Journals (Sweden)

Arash Daghighi

2011-01-01

Full Text Available In this paper, a nonlinear model for the body resistance of a 45nm PD SOI MOSFET is developed. This model verified on the base of the small signal three-dimensional simulation results. In this paper by using the three-dimensional simulation of ISE-TCAD software, the indicating factors of body resistance in nanometer transistors and then are shown, using the surface potential model. A mathematical relation to calculat the body resistance incorporating device width and body potential was derived. Excellent agreement was obtained by comparing the model outputs and three-dimensional simulation results.

One-dimensional breakdown voltage model of SOI RESURF lateral power device based on lateral linearly graded approximation

International Nuclear Information System (INIS)

Zhang Jun; Guo Yu-Feng; Xu Yue; Lin Hong; Yang Hui; Hong Yang; Yao Jia-Fei

2015-01-01

A novel one-dimensional (1D) analytical model is proposed for quantifying the breakdown voltage of a reduced surface field (RESURF) lateral power device fabricated on silicon on an insulator (SOI) substrate. We assume that the charges in the depletion region contribute to the lateral PN junctions along the diagonal of the area shared by the lateral and vertical depletion regions. Based on the assumption, the lateral PN junction behaves as a linearly graded junction, thus resulting in a reduced surface electric field and high breakdown voltage. Using the proposed model, the breakdown voltage as a function of device parameters is investigated and compared with the numerical simulation by the TCAD tools. The analytical results are shown to be in fair agreement with the numerical results. Finally, a new RESURF criterion is derived which offers a useful scheme to optimize the structure parameters. This simple 1D model provides a clear physical insight into the RESURF effect and a new explanation on the improvement in breakdown voltage in an SOI RESURF device. (paper)

Vibrational deactivation on chemically reactive potential surfaces: An exact quantum study of a low barrier collinear model of H + FH, D + FD, H + FD and D + FH

International Nuclear Information System (INIS)

Schatz, G.C.; Kuppermann, A.

1980-01-01

We study vibrational deactivation processes on chemically reactive potential energy surfaces by examining accurate quantum mechanical transition probabilities and rate constants for the collinear H + FH(v), D + FD(v), H + FD(v), and D + FH(v) reactions. A low barrier (1.7 kcal/mole) potential surface is used in these calculations, and we find that for all four reactions, the reactive inelastic rate constants are larger than the nonreactive ones for the same initial and final vibrational states. However, the ratios of these reactive and nonreactive rate constants depend strongly on the vibrational quantum number v and the isotopic composition of the reagents. Nonreactive and reactive transition probabilities for multiquantum jump transitions are generally comparable to those for single quantum transitions. This vibrationally nonadiabatic behavior is a direct consequence of the severe distortion of the diatomic that occurs in a collision on a low barrier reactive surface, and can make chemically reactive atoms like H or D more efficient deactivators of HF or DF than nonreactive collision partners. Many conclusions are in at least qualitative agreement with those of Wilkin's three dimensional quasiclassical trajectory study on the same systems using a similar surface. We also present results for H + HF(v) collisions which show that for a higher barrier potential surface (33 rather than 1.7 kcal/mole), the deactivation process becomes similar in character to that for nonreactive partners, with v→v-1 processes dominating

Fully-etched apodized fiber-to-chip grating coupler on the SOI platform with -0.78 dB coupling efficiency using photonic crystals and bonded Al mirror

DEFF Research Database (Denmark)

Ding, Yunhong; Ou, Haiyan; Peucheret, Christophe

2014-01-01

We design and fabricate an ultra-high coupling efficiency fully-etched apodized grating coupler on the SOI platform using photonic crystals and bonded aluminum mirror. Ultra-high coupling efficiency of -0.78 dB with a 3 dB bandwidth of 74 nm are demonstrated.......We design and fabricate an ultra-high coupling efficiency fully-etched apodized grating coupler on the SOI platform using photonic crystals and bonded aluminum mirror. Ultra-high coupling efficiency of -0.78 dB with a 3 dB bandwidth of 74 nm are demonstrated....

A low specific on-resistance SOI MOSFET with dual gates and a recessed drain

International Nuclear Information System (INIS)

Luo Xiao-Rong; Hu Gang-Yi; Zhang Zheng-Yuan; Luo Yin-Chun; Fan Ye; Wang Xiao-Wei; Fan Yuan-Hang; Cai Jin-Yong; Wang Pei; Zhou Kun

2013-01-01

A low specific on-resistance (R on,sp ) integrable silicon-on-insulator (SOI) metal-oxide semiconductor field-effect transistor (MOSFET) is proposed and investigated by simulation. The MOSFET features a recessed drain as well as dual gates, which consist of a planar gate and a trench gate extended to the buried oxide layer (BOX) (DGRD MOSFET). First, the dual gates form dual conduction channels, and the extended trench gate also acts as a field plate to improve the electric field distribution. Second, the combination of the trench gate and the recessed drain widens the vertical conduction area and shortens the current path. Third, the P-type top layer not only enhances the drift doping concentration but also modulates the surface electric field distributions. All of these sharply reduce R on,sp and maintain a high breakdown voltage (BV). The BV of 233 V and R on,sp of 4.151 mΩ·cm 2 (V GS = 15 V) are obtained for the DGRD MOSFET with 15-μm half-cell pitch. Compared with the trench gate SOI MOSFET and the conventional MOSFET, R on,sp of the DGRD MOSFET decreases by 36% and 33% with the same BV, respectively. The trench gate extended to the BOX synchronously acts as a dielectric isolation trench, simplifying the fabrication processes. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Enhancement of the incorporation of 5-fluorodeoxyuridylate into DNA of HL-60 cells by metabolic modulations

International Nuclear Information System (INIS)

Tanaka, M.; Kimura, K.; Yoshida, S.

1983-01-01

The exposure of HL-60 human promyelocytic leukemia cells to 0.5 microM 5-fluoro-2'-[ 3 H]deoxyuridine (FdUrd) for 16 hr resulted in the incorporation of 5.14 +/- 0.31 (S.D.) X 10(-7) mol FdUrd into DNA per mol of DNA nucleotide, which corresponds to 0.146 +/- 0.082 pmol FdUrd per 10(7) cells. Pretreatment with 50 microM deoxythymidine for 24 hr led to a 2.7-fold increase in the incorporation of this analogue into newly synthesized DNA during the ensuing 16-hr exposure to 0.5 microM [ 3 H]FdUrd. Pretreatment with 0.5 microM methotrexate for 3 hr also increased the [ 3 H]FdUrd incorporation into newly synthesized DNA approximately 5-fold. The coexistence of deoxythymidine or methotrexate with [ 3 H]FdUrd, however, led to decreased incorporation of FdUrd into DNA. More than 50% of the radioactivity in DNA separated by Cs2SO4 equilibrium density gradient centrifugation was proven to be fluorodeoxyuridylate by means of its binding to Lactobacillus casei deoxythymidine monophosphate synthetase

Mapping the broadband polarization properties of linear 2D SOI photonic crystal waveguides

DEFF Research Database (Denmark)

Canning, John; Skivesen, Nina; Kristensen, Martin

2007-01-01

Both quasi-TE and TM polarisation spectra for a silicon- on-insulator (SOI) waveguide are recorded over (1100-1700) nm using a broadband supercontinuum source. By studying both the input and output polarisation eigenstates we observe narrowband resonant cross coupling near the lowest quasi-TE mode...... cut-off. We also observe relatively broadband mixing between the two eigenstates to generate a complete photonic bandgap. By careful analysis of the output polarisation state we report on an inherent non-reciprocity between quasi TE and TM fundamental mode cross coupling. The nature of polarisation...

Study of the teratogenic potential of FD & C Yellow No. 5 when given by gavage to rats.

Science.gov (United States)

Collins, T F; Black, T N; Brown, L H; Bulhack, P

1990-12-01

FD & C Yellow No. 5 (tartrazine) was given to Osborne-Mendel rats by gavage at dose levels of 0, 60, 100, 200, 400, 600 or 1000 mg/kg body weight/day on days 0-19 of gestation. No maternal or developmental toxicity was observed when the rats were killed on day 20. The mean daily food consumption for the entire period of gestation was significantly greater in the females given 1000 mg/kg body weight/day than in the controls, but maternal body-weight gain was not affected. No dose-related effects were observed in implantations, foetal viability or external foetal development. Foetal skeletal and visceral development was similar among foetuses from all groups. At the doses given, FD & C Yellow No. 5 was neither toxic nor teratogenic.

Universal trench design method for a high-voltage SOI trench LDMOS

Institute of Scientific and Technical Information of China (English)

Hu Xiarong; Zhang Bo; Luo Xiaorong; Li Zhaoji

2012-01-01

The design method for a high-voltage SOl trench LDMOS for various trench permittivities,widths and depths is introduced.A universal method for efficient design is presented for the first time,taking the trade-off between breakdown voltage (BV) and specific on-resistance (Rs,on) into account.The high-k (relative permittivity)dielectric is suitable to fill a shallow and wide trench while the low-k dielectric is suitable to fill a deep and narrow trench.An SOI LDMOS with a vacuum trench in the drift region is also discussed.Simulation results show that the high FOM BV2/Rs,on can be achieved with a trench filled with the low-k dielectric due to its shortened cell-pitch.

Functional nanomaterials and devices for electronics, sensors and energy harvesting

CERN Document Server

Balestra, Francis; Kilchytska, Valeriya; Flandre, Denis

2014-01-01

This book contains reviews of recent experimental and theoretical results related to nanomaterials. It focuses on novel functional materials and nanostructures in combination with silicon on insulator (SOI) devices, as well as on the physics of new devices and sensors, nanostructured materials and nano scaled device characterization. Special attention is paid to fabrication and properties of modern low-power, high-performance, miniaturized, portable sensors in a wide range of applications such as telecommunications, radiation control, biomedical instrumentation and chemical analysis. In this book, new approaches exploiting nanotechnologies (such as UTBB FD SOI, Fin FETs, nanowires, graphene or carbon nanotubes on dielectric) to pave a way between “More Moore” and “More than Moore” are considered, in order to create different kinds of sensors and devices which will consume less electrical power, be more portable and totally compatible with modern microelectronics products.

Ballistic spin interferometer based on the Rashba and Dresselhaus spin-orbit interactions

International Nuclear Information System (INIS)

Ni Jiating; Chen Bin; Koga, T.

2008-01-01

By using the Al'tshuler-Aronov-Spivak (AAS) model, we give the amplitude changing with Rashba spin-orbit interaction (SOI) and Dresselhaus SOI strength. In the first idea 1D square loop (SL), Rashba SOI acts on two sides while Dresselhaus SOI acts on the other two sides. In the second SL, we consume Rashba SOI and Dresselhaus SOI act on four sides simultaneously. This model can be replaced by another one that Rashba SOI and Dresselhaus SOI act on every side independently, and each side is twice long. We theoretically illustrate the influence of the Dresselhaus SOI on node position and number. To explain the 'half oscillation' phenomenon found in experiment, we apply Dresselhaus SOI to the ideal 1D SL. The conclusion is that the Dresselhaus SOI has a strong effect on the emergence of 'half oscillation'

Pain in Fabry Disease: Practical Recommendations for Diagnosis and Treatment.

Science.gov (United States)

Politei, Juan M; Bouhassira, Didier; Germain, Dominique P; Goizet, Cyril; Guerrero-Sola, Antonio; Hilz, Max J; Hutton, Elspeth J; Karaa, Amel; Liguori, Rocco; Üçeyler, Nurcan; Zeltzer, Lonnie K; Burlina, Alessandro

2016-07-01

Patients with Fabry disease (FD) characteristically develop peripheral neuropathy at an early age, with pain being a crucial symptom of underlying pathology. However, the diagnosis of pain is challenging due to the heterogeneous and nonspecific symptoms. Practical guidance on the diagnosis and management of pain in FD is needed. In 2014, experts met to discuss recent advances on this topic and update clinical guidance. Emerging disease-specific tools, including FabryScan, Fabry-specific Pediatric Health and Pain Questionnaire, and Würzburg Fabry Pain Questionnaire, and more general tools like the Total Symptom Score can aid diagnosis, characterization, and monitoring of pain in patients with FD. These tools can be complemented by more objective and quantifiable sensory testing. In male and female patients of any age, pain related to FD can be an early indication to start disease-specific enzyme replacement therapy before potentially irreversible organ damage to the kidneys, heart, or brain occurs. To improve treatment outcomes, pain should be diagnosed early in unrecognized or newly identified FD patients. Treatment should include: (a) enzyme replacement therapy controlling the progression of underlying pathology; (b) adjunctive, symptomatic pain management with analgesics for chronic neuropathic and acute nociceptive, and inflammatory or mixed pain; and (c) lifestyle modifications. © 2016 The Authors. CNS Neuroscience & Therapeutics published by John Wiley & Sons Ltd.

arXiv Charge collection properties in an irradiated pixel sensor built in a thick-film HV-SOI process

CERN Document Server

INSPIRE-00541780; Cindro, V.; Gorišek, A.; Hemperek, T.; Kishishita, T.; Kramberger, G.; Krüger, H.; Mandić, I.; Mikuž, M.; Wermes, N.; Zavrtanik, M.

2017-10-25

Investigation of HV-CMOS sensors for use as a tracking detector in the ATLAS experiment at the upgraded LHC (HL-LHC) has recently been an active field of research. A potential candidate for a pixel detector built in Silicon-On-Insulator (SOI) technology has already been characterized in terms of radiation hardness to TID (Total Ionizing Dose) and charge collection after a moderate neutron irradiation. In this article we present results of an extensive irradiation hardness study with neutrons up to a fluence of 1x10e16 neq/cm2. Charge collection in a passive pixelated structure was measured by Edge Transient Current Technique (E-TCT). The evolution of the effective space charge concentration was found to be compliant with the acceptor removal model, with the minimum of the space charge concentration being reached after 5x10e14 neq/cm2. An investigation of the in-pixel uniformity of the detector response revealed parasitic charge collection by the epitaxial silicon layer characteristic for the SOI design. The r...

Integrated circuits of silicon on insulator S.O.I. technologies: State of the art and perspectives

International Nuclear Information System (INIS)

Leray, J.L.; Dupont-Nivet, E.; Raffaelli, M.; Coic, Y.M.; Musseau, O.; Pere, J.F.; Lalande, P.; Bredy, J.; Auberton-Herve, A.J.; Bruel, M.; Giffard, B.

1989-01-01

Silicon On Insulator technologies have been proposed to increase the integrated circuits performances in radiation operation. Active researches are conducted, in France and abroad. This paper reviews briefly radiation effects phenomenology in that particular type of structure S.O.I. New results are presented that show very good radiation behaviour in term of speed, dose (10 to 100 megarad (Si)), dose rate and S.E.U. performances [fr

Optimal Design of an Ultrasmall SOI-Based 1 × 8 Flat-Top AWG by Using an MMI

Directory of Open Access Journals (Sweden)

Hongqiang Li

2013-01-01

Full Text Available Four methods based on a multimode interference (MMI structure are optimally designed to flatten the spectral response of silicon-on-insulator- (SOI- based arrayed-waveguide grating (AWG applied in a demodulation integration microsystem. In the design for each method, SOI is selected as the material, the beam propagation method is used, and the performances (including the 3 dB passband width, the crosstalk, and the insertion loss of the flat-top AWG are studied. Moreover, the output spectrum responses of AWGs with or without a flattened structure are compared. The results show that low insertion loss, crosstalk, and a flat and efficient spectral response are simultaneously achieved for each kind of structure. By comparing the four designs, the design that combines a tapered MMI with tapered input/output waveguides, which has not been previously reported, was shown to yield better results than others. The optimized design reduced crosstalk to approximately −21.9 dB and had an insertion loss of −4.36 dB and a 3 dB passband width, that is, approximately 65% of the channel spacing.

A PD-SOI based DTI-LOCOS combined cross isolation technique for minimizing TID radiation induced leakage in high density memory

International Nuclear Information System (INIS)

Qiao Fengying; Pan Liyang; Wu Dong; Liu Lifang; Xu Jun

2014-01-01

In order to minimize leakage current increase under total ionizing dose (TID) radiation in high density memory circuits, a new isolation technique, combining deep trench isolation (DTI) between the wells, local oxidation of silicon (LOCOS) isolation between the devices within the well, and a P-diffused area in order to limit leakage at the isolation edge is implemented in partly-depleted silicon-on-insulator (PD-SOI) technology. This radiation hardening technique can minimize the layout area by more than 60%, and allows flexible placement of the body contact. Radiation hardened transistors and 256 Kb flash memory chips are designed and fabricated in a 0.6 μm PD-SOI process. Experiments show that no obvious increase in leakage current is observed for single transistors under 1 Mrad(Si) radiation, and that the 256 Kb memory chip still functions well after a TID of 100 krad(Si), with only 50% increase of the active power consumption in read mode. (semiconductor devices)

Impact of underlap spacer region variation on electrostatic and analog performance of symmetrical high-k SOI FinFET at 20 nm channel length

Science.gov (United States)

Jain, Neeraj; Raj, Balwinder

2017-12-01

Continued scaling of CMOS technology to achieve high performance and low power consumption of semiconductor devices in the complex integrated circuits faces the degradation in terms of electrostatic integrity, short channel effects (SCEs), leakage currents, device variability and reliability etc. Nowadays, multigate structure has become the promising candidate to overcome these problems. SOI FinFET is one of the best multigate structures that has gained importance in all electronic design automation (EDA) industries due to its improved short channel effects (SCEs), because of its more effective gate-controlling capabilities. In this paper, our aim is to explore the sensitivity of underlap spacer region variation on the performance of SOI FinFET at 20 nm channel length. Electric field modulation is analyzed with spacer length variation and electrostatic performance is evaluated in terms of performance parameter like electron mobility, electric field, electric potential, sub-threshold slope (SS), ON current (I on), OFF current (I off) and I on/I off ratio. The potential benefits of SOI FinFET at drain-to-source voltage, V DS = 0.05 V and V DS = 0.7 V towards analog and RF design is also evaluated in terms of intrinsic gain (A V), output conductance (g d), trans-conductance (g m), gate capacitance (C gg), and cut-off frequency (f T = g m/2πC gg) with spacer region variations.

Growth and characterization of InP/GaAs on SOI by MOCVD

International Nuclear Information System (INIS)

Karam, N.H.; Haven, V.; Vernon, S.M.; Namavar, F.; El-Masry, N.; Haegel, N.; Al-Jassin, M.M.

1990-01-01

This paper reports that epitaxial InP films have been successfully deposited on GaAs coated silicon wafers with a buried oxide for the first time by MOCVD. The SOI wafers were prepared using the Separation by Implantation of Oxygen (SIMOX) process. The quality of InP on SIMOX is comparable to the best of InP on Si deposited in the same reactor. Preliminary results on defect reduction techniques such as Thermal Cycle Growth (TCG) show an order of magnitude increase in the photoluminescence intensity and a factor of five reduction in the defect density. TCG has been found more effective than Thermal Cycle Annealing (TCA) in improving the crystalline perfection and optical properties of the deposited films

Drug abuse: newly-emerging drugs and trends.

Science.gov (United States)

Davis, Gregory G

2012-09-01

Drug abusers have access to new, more potent compounds that evade existing laws by virtue of their novel chemical structures. These drugs are available for purchase at stores and over the internet. The drugs are not illegal because they are so new that laws have not yet been passed to ban them. These drugs are leading to emergency department visits for cardiovascular, neurologic, and psychiatric complications. Standard drug screens are not designed to detect these new substances. The internet provides access to drugs for substance abusers but also provides physicians speed of access to the habits of substance abusers.

Mixed logic style adder circuit designed and fabricated using SOI substrate for irradiation-hardened experiment

Science.gov (United States)

Yuan, Shoucai; Liu, Yamei

2016-08-01

This paper proposed a rail to rail swing, mixed logic style 28-transistor 1-bit full adder circuit which is designed and fabricated using silicon-on-insulator (SOI) substrate with 90 nm gate length technology. The main goal of our design is space application where circuits may be damaged by outer space radiation; so the irradiation-hardened technique such as SOI structure should be used. The circuit's delay, power and power-delay product (PDP) of our proposed gate diffusion input (GDI)-based adder are HSPICE simulated and compared with other reported high-performance 1-bit adder. The GDI-based 1-bit adder has 21.61% improvement in delay and 18.85% improvement in PDP, over the reported 1-bit adder. However, its power dissipation is larger than that reported with 3.56% increased but is still comparable. The worst case performance of proposed 1-bit adder circuit is also seen to be less sensitive to variations in power supply voltage (VDD) and capacitance load (CL), over a wide range from 0.6 to 1.8 V and 0 to 200 fF, respectively. The proposed and reported 1-bit full adders are all layout designed and wafer fabricated with other circuits/systems together on one chip. The chip measurement and analysis has been done at VDD = 1.2 V, CL = 20 fF, and 200 MHz maximum input signal frequency with temperature of 300 K.

Operation of SOI P-Channel Field Effect Transistors, CHT-PMOS30, under Extreme Temperatures

Science.gov (United States)

Patterson, Richard; Hammoud, Ahmad

2009-01-01

Electronic systems are required to operate under extreme temperatures in NASA planetary exploration and deep space missions. Electronics on-board spacecraft must also tolerate thermal cycling between extreme temperatures. Thermal management means are usually included in today s spacecraft systems to provide adequate temperature for proper operation of the electronics. These measures, which may include heating elements, heat pipes, radiators, etc., however add to the complexity in the design of the system, increases its cost and weight, and affects its performance and reliability. Electronic parts and circuits capable of withstanding and operating under extreme temperatures would reflect in improvement in system s efficiency, reducing cost, and improving overall reliability. Semiconductor chips based on silicon-on-insulator (SOI) technology are designed mainly for high temperature applications and find extensive use in terrestrial well-logging fields. Their inherent design offers advantages over silicon devices in terms of reduced leakage currents, less power consumption, faster switching speeds, and good radiation tolerance. Little is known, however, about their performance at cryogenic temperatures and under wide thermal swings. Experimental investigation on the operation of SOI, N-channel field effect transistors under wide temperature range was reported earlier [1]. This work examines the performance of P-channel devices of these SOI transistors. The electronic part investigated in this work comprised of a Cissoid s CHT-PMOS30, high temperature P-channel MOSFET (metal-oxide semiconductor field-effect transistor) device [2]. This high voltage, medium-power transistor is designed for geothermal well logging applications, aerospace and avionics, and automotive industry, and is specified for operation in the temperature range of -55 C to +225 C. Table I shows some specifications of this transistor [2]. The CHT-PMOS30 device was characterized at various temperatures

Error-free Dispersion-uncompensated Transmission at 20 Gb/s over SSMF using a Hybrid III-V/SOI DML with MRR Filtering

DEFF Research Database (Denmark)

Cristofori, Valentina; Kamchevska, Valerija; Ding, Yunhong

2016-01-01

Error-free 20-Gb/s directly-modulated transmission is achieved by enhancing the dispersion tolerance of a III-V/SOI DFB laser with a silicon micro-ring resonator. Low (∼0.4 dB) penalty compared to back-to-back without ring is demonstrated after 5-km SSMF....

Summary Report for ASC L2 Milestone #4782: Assess Newly Emerging Programming and Memory Models for Advanced Architectures on Integrated Codes

Energy Technology Data Exchange (ETDEWEB)

Neely, J. R. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Hornung, R. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Black, A. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Robinson, P. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

2014-09-29

This document serves as a detailed companion to the powerpoint slides presented as part of the ASC L2 milestone review for Integrated Codes milestone #4782 titled “Assess Newly Emerging Programming and Memory Models for Advanced Architectures on Integrated Codes”, due on 9/30/2014, and presented for formal program review on 9/12/2014. The program review committee is represented by Mike Zika (A Program Project Lead for Kull), Brian Pudliner (B Program Project Lead for Ares), Scott Futral (DEG Group Lead in LC), and Mike Glass (Sierra Project Lead at Sandia). This document, along with the presentation materials, and a letter of completion signed by the review committee will act as proof of completion for this milestone.

Optical signal processing by silicon photonics

CERN Document Server

Ahmed, Jameel; Adeel, Freeha; Hussain, Ashiq

2014-01-01

The main objective of this book is to make respective graduate students understand the nonlinear effects inside SOI waveguide and possible applications of SOI waveguides in this emerging research area of optical fibre communication. This book focuses on achieving successful optical frequency shifting by Four Wave Mixing (FWM) in silicon-on-insulator (SOI) waveguide by exploiting a nonlinear phenomenon.

Emerging contaminants in groundwater

OpenAIRE

Lapworth, Dan; Stuart, Marianne; Hart, Alwyn; Crane, Emily; Baran, Nicole

2011-01-01

The term ‘emerging contaminants’ (ECs) is used to cover not only newly developed compounds but also includes newly discovered compounds in the environment (often due to analytical developments), and compounds that have been recently categorised as contaminants. ECs include a huge array of different compounds (and their metabolites) that are used by society for a range of purposes and include; pharmaceuticals, pesticides, personal care products, veterinary medicines, engineered nano-materials,...

Newly Emerging Immune Checkpoints: Promises for Future Cancer Therapy

Directory of Open Access Journals (Sweden)

Robert J. Torphy

2017-12-01

Full Text Available Cancer immunotherapy has been a great breakthrough, with immune checkpoint inhibitors leading the way. Despite the clinical effectiveness of certain immune checkpoint inhibitors, the overall response rate remains low, and the effectiveness of immunotherapies for many tumors has been disappointing. There is substantial interest in looking for additional immune checkpoint molecules that may act as therapeutic targets for cancer. Recent advances during the last decade have identified several novel immune checkpoint targets, including lymphocyte activation gene-3 (LAG-3, B and T lymphocyte attenuator (BTLA, programmed death-1 homolog (PD-1H, T-cell immunoglobulin and immunoreceptor tyrosine-based inhibitory motif domain (TIM-3/carcinoembryonic antigen cell adhesion molecule 1 (CEACAM1, and the poliovirus receptor (PVR-like receptors. The investigations into these molecules have generated promising results in preclinical studies. Herein, we will summarize our current progress and understanding of these newly-characterized immune checkpoints and their potential application in cancer immunotherapy.

VARIABILITY OF FORCED OSCILLATION (SIEMENS SIREGNOST FD-5) MEASUREMENTS OF TOTAL RESPIRATORY RESISTANCE IN PATIENTS AND HEALTHY-SUBJECTS

NARCIS (Netherlands)

GIMENO, F; VANDERWEELE, LT; KOETER, GH; DEMONCHY, JGR; VANALTENA, R

The reproducibility of total respiratory resistance (R(rs)) measured with a simplified forced oscillatory method (Siemens Siregnost FD 5) was measured and compared with that of slow inspiratory vital capacity (IVC) and forced expiratory volume in one second (FEV1). The former technique has the

Fabrication and simulation of single crystal p-type Si nanowire using SOI technology

International Nuclear Information System (INIS)

Dehzangi, Arash; Larki, Farhad; Naseri, Mahmud G.; Navasery, Manizheh; Majlis, Burhanuddin Y.; Razip Wee, Mohd F.; Halimah, M.K.; Islam, Md. Shabiul; Md Ali, Sawal H.; Saion, Elias

2015-01-01

Highlights: • Single crystal silicon nanowire is fabricated on Si on insulator substrate, using atomic force microscope (AFM) nanolithography and KOH + IPA chemical wet etching. • Some of major parameters in fabrication process, such as writing speed and applied voltage along with KOH etching depth are investigated, and then the I–V characteristic of Si nanowires is measured. • For better understanding of the charge transmission through the nanowire, 3D-TCAD simulation is performed to simulate the Si nanowires with the same size of the fabricated ones, and variation of majority and minority carriers, hole quasi-Fermi level and generation/recombination rate are investigated. - Abstract: Si nanowires (SiNWs) as building blocks for nanostructured materials and nanoelectronics have attracted much attention due to their major role in device fabrication. In the present work a top-down fabrication approach as atomic force microscope (AFM) nanolithography was performed on Si on insulator (SOI) substrate to fabricate a single crystal p-type SiNW. To draw oxide patterns on top of the SOI substrate local anodic oxidation was carried out by AFM in contact mode. After the oxidation procedure, an optimized solution of 30 wt.% KOH with 10 vol.% IPA for wet etching at 63 °C was applied to extract the nanostructure. The fabricated SiNW had 70–85 nm full width at half maximum width, 90 nm thickness and 4 μm length. The SiNW was simulated using Sentaurus 3D software with the exact same size of the fabricated device. I–V characterization of the SiNW was measured and compared with simulation results. Using simulation results variation of carrier's concentrations, valence band edge energy and recombination generation rate for different applied voltage were investigated

Fabrication and simulation of single crystal p-type Si nanowire using SOI technology

Energy Technology Data Exchange (ETDEWEB)

Dehzangi, Arash, E-mail: arashd53@hotmail.com [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Larki, Farhad [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Naseri, Mahmud G. [Department of Physics, Faculty of Science, Malayer University, Malayer, Hamedan (Iran, Islamic Republic of); Navasery, Manizheh [Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Majlis, Burhanuddin Y.; Razip Wee, Mohd F. [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Halimah, M.K. [Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Islam, Md. Shabiul; Md Ali, Sawal H. [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Saion, Elias [Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia)

2015-04-15

Highlights: • Single crystal silicon nanowire is fabricated on Si on insulator substrate, using atomic force microscope (AFM) nanolithography and KOH + IPA chemical wet etching. • Some of major parameters in fabrication process, such as writing speed and applied voltage along with KOH etching depth are investigated, and then the I–V characteristic of Si nanowires is measured. • For better understanding of the charge transmission through the nanowire, 3D-TCAD simulation is performed to simulate the Si nanowires with the same size of the fabricated ones, and variation of majority and minority carriers, hole quasi-Fermi level and generation/recombination rate are investigated. - Abstract: Si nanowires (SiNWs) as building blocks for nanostructured materials and nanoelectronics have attracted much attention due to their major role in device fabrication. In the present work a top-down fabrication approach as atomic force microscope (AFM) nanolithography was performed on Si on insulator (SOI) substrate to fabricate a single crystal p-type SiNW. To draw oxide patterns on top of the SOI substrate local anodic oxidation was carried out by AFM in contact mode. After the oxidation procedure, an optimized solution of 30 wt.% KOH with 10 vol.% IPA for wet etching at 63 °C was applied to extract the nanostructure. The fabricated SiNW had 70–85 nm full width at half maximum width, 90 nm thickness and 4 μm length. The SiNW was simulated using Sentaurus 3D software with the exact same size of the fabricated device. I–V characterization of the SiNW was measured and compared with simulation results. Using simulation results variation of carrier's concentrations, valence band edge energy and recombination generation rate for different applied voltage were investigated.

Advanced TEM Characterization for the Development of 28-14nm nodes based on fully-depleted Silicon-on-Insulator Technology

International Nuclear Information System (INIS)

Servanton, G; Clement, L; Lepinay, K; Lorut, F; Pantel, R; Pofelski, A; Bicais, N

2013-01-01

The growing demand for wireless multimedia applications (smartphones, tablets, digital cameras) requires the development of devices combining both high speed performances and low power consumption. A recent technological breakthrough making a good compromise between these two antagonist conditions has been proposed: the 28-14nm CMOS transistor generations based on a fully-depleted Silicon-on-Insulator (FD-SOI) performed on a thin Si film of 5-6nm. In this paper, we propose to review the TEM characterization challenges that are essential for the development of extremely power-efficient System on Chip (SoC)

A silicon doped hafnium oxide ferroelectric p–n–p–n SOI tunneling field–effect transistor with steep subthreshold slope and high switching state current ratio

Directory of Open Access Journals (Sweden)

Saeid Marjani

2016-09-01

Full Text Available In this paper, a silicon–on–insulator (SOI p–n–p–n tunneling field–effect transistor (TFET with a silicon doped hafnium oxide (Si:HfO2 ferroelectric gate stack is proposed and investigated via 2D device simulation with a calibrated nonlocal band–to–band tunneling model. Utilization of Si:HfO2 instead of conventional perovskite ferroelectrics such as lead zirconium titanate (PbZrTiO3 and strontium bismuth tantalate (SrBi2Ta2O9 provides compatibility to the CMOS process as well as improved device scalability. By using Si:HfO2 ferroelectric gate stack, the applied gate voltage is effectively amplified that causes increased electric field at the tunneling junction and reduced tunneling barrier width. Compared with the conventional p–n–p–n SOI TFET, the on–state current and switching state current ratio are appreciably increased; and the average subthreshold slope (SS is effectively reduced. The simulation results of Si:HfO2 ferroelectric p–n–p–n SOI TFET show significant improvement in transconductance (∼9.8X enhancement at high overdrive voltage and average subthreshold slope (∼35% enhancement over nine decades of drain current at room temperature, indicating that this device is a promising candidate to strengthen the performance of p–n–p–n and conventional TFET for a switching performance.

L’empathie comme outil herméneutique du soi: Note sur Paul Ricœur et Heinz Kohut

Directory of Open Access Journals (Sweden)

Michel Dupuis

2011-01-01

Full Text Available Le bref texte que Paul Ricœur consacre en 1986 à la psychanalyse développée par Heinz Kohut révèle une réinterprétation phénoménologique à la fois du contenu et des fonctions de l'empathie, au total considérée comme un véritable outil à l'œuvre dans l'herméneutique du soi. La vision kohutienne de la constitution du soi et du processus thérapeutique analytique produit une espèce de “dé-sentimentalisation” de l'empathie, en soulignant le rôle crucial du transfert intersubjectif, fort à distance de la théorie (freudienne solipsiste de l'ego.The short text published in 1986 by Paul Ricoeur about Heinz Kohut's psychoanalysis of the self reveals a phenomenological reinterpretation of the content and the functions of empathy, finally considered as an effective tool of the hermeneutics of the self. Kohut's model of constitution of the self and of the therapeutic analytical process produces a kind of “de-sentimentalization” of empathy, pointing to the crucial role of intersubjective transfer, far from a (Freudian solipsistic theory of the ego.

A three-dimensional breakdown model of SOI lateral power transistors with a circular layout

International Nuclear Information System (INIS)

Guo Yufeng; Wang Zhigong; Sheu Gene

2009-01-01

This paper presents an analytical three-dimensional breakdown model of SOI lateral power devices with a circular layout. The Poisson equation is solved in cylindrical coordinates to obtain the radial surface potential and electric field distributions for both fully- and partially-depleted drift regions. The breakdown voltages for N + N and P + N junctions are derived and employed to investigate the impact of cathode region curvature. A modified RESURF criterion is proposed to provide a design guideline for optimizing the breakdown voltage and doping concentration in the drift region in three dimensional space. The analytical results agree well with MEDICI simulation results and experimental data from earlier publications. (semiconductor devices)

Analysis of silicon on insulator (SOI) optical microring add-drop filter based on waveguide intersections

Science.gov (United States)

Kaźmierczak, Andrzej; Bogaerts, Wim; Van Thourhout, Dries; Drouard, Emmanuel; Rojo-Romeo, Pedro; Giannone, Domenico; Gaffiot, Frederic

2008-04-01

We present a compact passive optical add-drop filter which incorporates two microring resonators and a waveguide intersection in silicon-on-insulator (SOI) technology. Such a filter is a key element for designing simple layouts of highly integrated complex optical networks-on-chip. The filter occupies an area smaller than 10μm×10μm and exhibits relatively high quality factors (up to 4000) and efficient signal dropping capabilities. In the present work, the influence of filter parameters such as the microring-resonators radii and the coupling section shape are analyzed theoretically and experimentally

Intrinsic Nonlinearities and Layout Impacts of 100 V Integrated Power MOSFETs in Partial SOI Process

DEFF Research Database (Denmark)

Fan, Lin; Knott, Arnold; Jørgensen, Ivan Harald Holger

Parasitic capacitances of power semiconductors are a part of the key design parameters of state-of-the-art very high frequency (VHF) power supplies. In this poster, four 100 V integrated power MOSFETs with different layout structures are designed, implemented, and analyzed in a 0.18 ȝm partial...... Silicon-on-Insulator (SOI) process with a die area 2.31 mm2.  A small-signal model of power MOSFETs is proposed to systematically analyze the nonlinear parasitic capacitances in different transistor states: off-state, sub-threshold region, and on-state in the linear region. 3D plots are used to summarize...

An analytical threshold voltage model for a short-channel dual-metal-gate (DMG) recessed-source/drain (Re-S/D) SOI MOSFET

Science.gov (United States)

Saramekala, G. K.; Santra, Abirmoya; Dubey, Sarvesh; Jit, Satyabrata; Tiwari, Pramod Kumar

2013-08-01

In this paper, an analytical short-channel threshold voltage model is presented for a dual-metal-gate (DMG) fully depleted recessed source/drain (Re-S/D) SOI MOSFET. For the first time, the advantages of recessed source/drain (Re-S/D) and of dual-metal-gate structure are incorporated simultaneously in a fully depleted SOI MOSFET. The analytical surface potential model at Si-channel/SiO2 interface and Si-channel/buried-oxide (BOX) interface have been developed by solving the 2-D Poisson’s equation in the channel region with appropriate boundary conditions assuming parabolic potential profile in the transverse direction of the channel. Thereupon, a threshold voltage model is derived from the minimum surface potential in the channel. The developed model is analyzed extensively for a variety of device parameters like the oxide and silicon channel thicknesses, thickness of source/drain extension in the BOX, control and screen gate length ratio. The validity of the present 2D analytical model is verified with ATLAS™, a 2D device simulator from SILVACO Inc.

Fabrication of SGOI material by oxidation of an epitaxial SiGe layer on an SOI wafer with H ions implantation

International Nuclear Information System (INIS)

Cheng Xinli; Chen Zhijun; Wang Yongjin; Jin Bo; Zhang Feng; Zou Shichang

2005-01-01

SGOI materials were fabricated by thermal dry oxidation of epitaxial H-ion implanted SiGe layers on SOI wafers. The hydrogen implantation was found to delay the oxidation rate of SiGe layer and to decrease the loss of Ge atoms during oxidation. Further, the H implantation did not degrade the crystallinity of SiGe layer during fabrication of the SGOI

Morphometric study of newly emerged unmated queens of honey bee Apis mellifera L. in Ismailia Governorate, Egypt

Directory of Open Access Journals (Sweden)

S.M. Kamel

2013-06-01

Full Text Available Recently, morphometric analysis is being a very good tool for identification of honey bee races and characterization of genetic materials. This fact has motivated the present work to investigate the effects of two grafting methods, three types of artificial queen wax cups and four periods of queen rearing on some morphological characters of newly emerged queens. The developed technique used in the present study depends on the integration between Scanner unit and Photoshop program, called Scan Photo Method (SPM. The measurements of 23 morphological characteristics of reared queens were estimated by using SPM. Results indicated significant differences between periods in the measurements of the studied characteristics on forewing such as cubital index, distance C, distance D, radial field, inner wing length, inner wing width, dumb bell index, distance I, II, III and IV, except cubital A and cubital B. Regarding the effects of cup types and grafting methods, data also revealed significant differences in all measurements of studied characteristics, except tibial length, hind wing length, cubital B, radial field and distance IV. Further works in this area were recommended to find out a relation between some morphometric characters and important of some quantitative characters.

Mechanisms of Low-Energy Operation of XCT-SOI CMOS Devices—Prospect of Sub-20-nm Regime

Directory of Open Access Journals (Sweden)

Yasuhisa Omura

2014-01-01

Full Text Available This paper describes the performance prospect of scaled cross-current tetrode (XCT CMOS devices and demonstrates the outstanding low-energy aspects of sub-30-nm-long gate XCT-SOI CMOS by analyzing device operations. The energy efficiency improvement of such scaled XCT CMOS circuits (two orders higher stems from the “source potential floating effect”, which offers the dynamic reduction of effective gate capacitance. It is expected that this feature will be very important in many medical implant applications that demand a long device lifetime without recharging the battery.

Newly democratic Mongolia offering exploration contracts

International Nuclear Information System (INIS)

Penttila, W.C.

1992-01-01

This paper reports that Mongolia, formerly the Mongolian People's Republic, is working to open its exploration prospects to international operators as it emerges as the world's 15th largest independent nation. The country, about the same size as Alaska with a population of 2 million, held its first free election in July 1990. The newly elected government drafted a constitution that took effect Feb. 12, 1992. The document modifies the previous government's structures to eliminate bureaucracy and allows for political pluralism. At the same time, the government is formulating energy policies, state oil company structure, and resource development philosophy

Nano-Medicine as a Newly Emerging Approach to Combat Human Immunodeficiency Virus (HIV).

Science.gov (United States)

Saravanan, Muthupandian; Asmalash, Tsehaye; Gebrekidan, Atsebaha; Gebreegziabiher, Dawit; Araya, Tadele; Hilekiros, Haftamu; Barabadi, Hamed; Ramanathan, Kumaresan

2018-01-01

Human Immuno deficiency Virus (HIV) infection has attained pandemic level due to its complexity on both the HIV infection cycle and on the targets for drug delivery. This limits medication and consequently requires prominent and promising drug delivery systems to be invented. Notably, various nanomaterial have been studied to enhance effective delivery of the antiretroviral drugs for HIV prevention, diagnosis and cure. Some of these nanomaterials are liposomes, dendrimers, inorganic nanoparticles (NPs), polymeric micelles, natural and synthetic polymers. The present study aimed to review the recent progress in nanomedicine as a newly emerging approach to combat HIV. The scientific data bases reviewed carefully to find both in vitro and in vivo studies representing the role of nonomedicine to combat HIV. Impressively, nanomedicine drug delivery systems have been commendable in various models ranging from in vitro to in vivo. It gives notion about the application of nano-carrier systems for the delivery of anti-retroviral drugs which ideally should provide better distribution to surpass Blood- Brain Barrier (BBB) and other tissue or to overcome innate barriers such as mucus. Considerably, nanomaterials such as dendrimers and many other inorganic NPs such as silver, gold, iron, and zinc can be used for HIV treatment by interfering in varying stages of HIV life cycle. Furthermore, NPs could best act as adjuvants, convoys during vaccine delivery, as intra-vaginal microbicides and for the early detection of HIV-1 p24 antigen. Nanomedicine may be a proper approach in HIV/AIDS therapy by means of offering lower dosage and side effect, better patient-to-patient consistency, bioavailability, target specificity and improved sensitivity of HIV diagnosis. Copyright© Bentham Science Publishers; For any queries, please email at epub@benthamscience.org.

Effect of the Ion Mass and Energy on the Response of 70-nm SOI Transistors to the Ion Deposited Charge by Direct Ionization

International Nuclear Information System (INIS)

Raine, M.; Gaillardin, M.; Sauvestre, J.E.; Flament, O.; Bournel, A.; Aubry-Fortuna, V.

2010-01-01

The response of SOI transistors under heavy ion irradiation is analyzed using Geant4 and Synopsys Sentaurus device simulations. The ion mass and energy have a significant impact on the radial ionization profile of the ion deposited charge. For example, for an identical LET, the higher the ion energy per nucleon, the wider the radial ionization track. For a 70-nm SOI technology, the track radius of high energy ions (≥ 10 MeV/a) is larger than the transistor sensitive volume; part of the ion charge recombines in the highly doped source or drain regions and does not participate to the transistor electric response. At lower energy (≤ 10 MeV/a), as often used for ground testing, the track radius is smaller than the transistor sensitive volume, and the entire charge is used for the transistor response. The collected charge is then higher, corresponding to a worst-case response of the transistor. Implications for the hardness assurance of highly-scaled generations are discussed. (authors)

Investigation of AWG demultiplexer based SOI for CWDM application

Directory of Open Access Journals (Sweden)

Juhari Nurjuliana

2017-01-01

Full Text Available 9-channel Arrayed Waveguide Grating (AWG demultiplexer for conventional and tapered structure were simulated using beam propagation method (BPM with channel spacing of 20 nm. The AWG demultiplexer was design using high refractive index (n~3.47 material namely silicon-on-insulator (SOI with rib waveguide structure. The characteristics of insertion loss, adjacent crosstalk and output spectrum response at central wavelength of 1.55 μm for both designs were compared and analyzed. The conventional AWG produced a minimum insertion loss of 6.64 dB whereas the tapered AWG design reduced the insertion loss by 2.66 dB. The lowest adjacent crosstalk value of -16.96 dB was obtained in the conventional AWG design and this was much smaller compared to the tapered AWG design where the lowest crosstalk value is -17.23 dB. Hence, a tapered AWG design significantly reduces the insertion loss but has a slightly higher adjacent crosstalk compared to the conventional AWG design. On the other hand, the output spectrum responses that are obtained from both designs were close to the Coarse Wavelength Division Multiplexing (CWDM wavelength grid.

Three-dimensional dynamo-thermo-elastic analysis of a functionally graded cylindrical shell with piezoelectric layers by DQ-FD coupled

International Nuclear Information System (INIS)

Akbari Alashti, R.; Khorsand, M.

2012-01-01

Three-dimensional elastic analysis is carried out for functionally graded cylindrical shells bonded with piezoelectric layers subjected to dynamic and thermal loads. Material properties are assumed to be graded in the radial direction obeying a simple power law with constant Poisson's ratio. Two versions of differential quadrature (DQ) method coupled with the finite difference (FD) method are employed to discretize the governing differential equations in space and time domains. The convergence is studied and results of the axisymmetric loadings are verified with reported results. Effects of the grading index of material properties, thermal gradient, boundary conditions, thickness of piezoelectric layers and electric excitation on stress, displacement, electric and temperature fields are presented. Highlights: ► Dynamo-thermo-elastic analysis of an FGM shell with piezoelectric layer is carried out. ► Governing equations are solved by DQ-FD coupled. ► Effects of grading index, temperature difference and piezoelectric thickness are presented.

FD_BH: a program for simulating electromagnetic waves from a borehole antenna

Science.gov (United States)

Ellefsen, Karl J.

2002-01-01

Program FD_BH is used to simulate the electromagnetic waves generated by an antenna in a borehole. The model representing the antenna may include metallic parts, a coaxial cable as a feed to the driving point, and resistive loading. The program is written in the C programming language, and the program has been tested on both the Windows and the UNIX operating systems. This Open-File Report describes • The contents and organization of the Zip file (section 2). • The program files, the installation of the program, the input files, and the execution of the program (section 3). • Address to which suggestions for improving the program may be sent (section 4).

Clustering of Emerging Flux

Science.gov (United States)

Ruzmaikin, A.

1997-01-01

Observations show that newly emerging flux tends to appear on the Solar surface at sites where there is flux already. This results in clustering of solar activity. Standard dynamo theories do not predict this effect.

A chronic toxicity/carcinogenicity study of FD & C Yellow No. 5 (tartrazine) in mice.

Science.gov (United States)

Borzelleca, J F; Hallagan, J B

1988-03-01

Charles River CD-1 mice were fed FD & C Yellow No. 5 in the diet at levels of 0.0, 0.0, 0.5, 1.5 or 5.0% in a long-term toxicity/carcinogenicity study. Each group consisted of 60 males and 60 females. Maximum exposure was 104 wk for both males and females. No consistent, significant compound-related adverse effects were noted. The no-observed-adverse effect level established in this study was 5.0% (8103 mg/kg/day and 9735 mg/kg/day for male and female mice, respectively.)

Preparative separation of two subsidiary colors of FD&C Yellow No. 5 (Tartrazine) using spiral high-speed counter-current chromatography◊

Science.gov (United States)

Roque, Jose A.; Mazzola, Eugene P.; Ito, Yoichiro

2014-01-01

Specifications in the U.S. Code of Federal Regulations for the color additive FD&C Yellow No. 5 (Colour Index No. 19140) limit the level of the tetrasodium salt of 4-[(4',5-disulfo[1,1'-biphenyl]-2-yl)hydrazono]-4,5-dihydro-5-oxo-1-(4-sulfophenyl)-1H-pyrazole-3-carboxylic acid and that of the trisodium salt of 4,4'-[4,5-dihydro-5-oxo-4-[(4-sulfophenyl)hydrazono]-1H-pyrazol-1,3-diyl]bis[benzenesulfonic acid], which are subsidiary colors abbreviated as Pk5 and Pk7, respectively. Small amounts of Pk5 and Pk7 are needed by the U.S. Food and Drug Administration for confirmatory analyses and for development of analytical methods. The present study describes the use of spiral high-speed counter-current chromatography (HSCCC) with the recently introduced highly polar organic/high-ionic strength aqueous solvent systems to separate Pk5 and Pk7 from a sample of FD&C Yellow No. 5 containing ~3.5% Pk5 and ~0.7% Pk7. Multiple ~1.0 g portions of FD&C Yellow No. 5 (totaling 6.4 g dye) were separated, using the upper phase of the solvent system 1-BuOH/EtOHabs/saturated ammonium sulfate/water, 1.7:0.3:1:1, v/v/v/v, as the mobile phase. After applying a specially developed method for removing the ammonium sulfate from the HSCCC-collected fractions, these separations resulted in an enriched mixture (~160 mg) of Pk5 and Pk7 (~46% and ~21%, respectively). Separation of the enriched mixture, this time using the lower phase of that solvent system as the mobile phase, resulted in ~ 61 mg of Pk5 collected in fractions whose purity ranged from 88.0% to 92.7% (by HPLC at 254 nm). Pk7 (20.7 mg, ~83% purity) was recovered from the upper phase of the column content. Application of this procedure also resulted in purifying the major component of FD&C Yellow No. 5 to >99% purity. The separated compounds were characterized by high-resolution mass spectrometry and several 1H and 13C nuclear magnetic resonance spectroscopic techniques (COSY, NOESY, HSQC, and HMBC). PMID:24755184

Design and simulation of resistive SOI CMOS micro-heaters for high temperature gas sensors

International Nuclear Information System (INIS)

Iwaki, T; Covington, J A; Udrea, F; Ali, S Z; Guha, P K; Gardner, J W

2005-01-01

This paper describes the design of doped single crystal silicon (SCS) microhotplates for gas sensors. Resistive heaters are formed by an n+/p+ implantation into a Silicon-On-Insulator (SOI) wafer with a post-CMOS deep reactive ion etch to remove the silicon substrate. Hence they are fully compatible with CMOS technologies and allows for the integration of associated drive/detection circuitry. 2D electro-thermal models have been constructed and the results of numerical simulations using FEMLAB[reg] are given. Simulations show these micro-hotplates can operate at temperatures of 500 deg. C with a drive voltage of only 5 V and a power consumption of less than 100 mW

Characterization of three newly established rat sarcoma cell clones

Czech Academy of Sciences Publication Activity Database

Holubová, Monika; Leba, M.; Sedmíková, M.; Vannucci, Luca; Horák, Vratislav

2012-01-01

Roč. 48, č. 10 (2012), s. 610-618 ISSN 1071-2690 R&D Projects: GA MŠk 2B08063 Institutional support: RVO:67985904 Keywords : sarcoma * cell clones * lewis rat Subject RIV: FD - Oncology ; Hematology Impact factor: 1.289, year: 2012

Food security among individuals experiencing homelessness and mental illness in the At Home/Chez Soi Trial.

Science.gov (United States)

O'Campo, Patricia; Hwang, Stephen W; Gozdzik, Agnes; Schuler, Andrée; Kaufman-Shriqui, Vered; Poremski, Daniel; Lazgare, Luis Ivan Palma; Distasio, Jino; Belbraouet, Slimane; Addorisio, Sindi

2017-08-01

Individuals experiencing homelessness are particularly vulnerable to food insecurity. The At Home/Chez Soi study provides a unique opportunity to first examine baseline levels of food security among homeless individuals with mental illness and second to evaluate the effect of a Housing First (HF) intervention on food security in this population. At Home/Chez Soi was a 2-year randomized controlled trial comparing the effectiveness of HF compared with usual care among homeless adults with mental illness, stratified by level of need for mental health services (high or moderate). Logistic regressions tested baseline associations between food security (US Food Security Survey Module), study site, sociodemographic variables, duration of homelessness, alcohol/substance use, physical health and service utilization. Negative binomial regression determined the impact of the HF intervention on achieving levels of high or marginal food security over an 18-month follow-up period (6 to 24 months). Community settings at five Canadian sites (Moncton, Montreal, Toronto, Winnipeg and Vancouver). Homeless adults with mental illness (n 2148). Approximately 41 % of our sample reported high or marginal food security at baseline, but this figure varied with gender, age, mental health issues and substance use problems. High need participants who received HF were more likely to achieve marginal or high food security than those receiving usual care, but only at the Toronto and Moncton sites. Our large multi-site study demonstrated low levels of food security among homeless experiencing mental illness. HF showed promise for improving food security among participants with high levels of need for mental health services, with notable site differences.

Curcumin stably interacts with DNA hairpin through minor groove binding and demonstrates enhanced cytotoxicity in combination with FdU nucleotides.

Science.gov (United States)

Ghosh, Supratim; Mallick, Sumana; Das, Upasana; Verma, Ajay; Pal, Uttam; Chatterjee, Sabyasachi; Nandy, Abhishek; Saha, Krishna D; Maiti, Nakul Chandra; Baishya, Bikash; Suresh Kumar, G; Gmeiner, William H

2018-03-01

We report, based on biophysical studies and molecular mechanical calculations that curcumin binds DNA hairpin in the minor groove adjacent to the loop region forming a stable complex. UV-Vis and fluorescence spectroscopy indicated interaction of curcumin with DNA hairpin. In this novel binding motif, two ɣ H of curcumin heptadiene chain are closely positioned to the A 16 -H8 and A 17 -H8, while G 12 -H8 is located in the close proximity of curcumin α H. Molecular dynamics (MD) simulations suggest, the complex is stabilized by noncovalent forces including; π-π stacking, H-bonding and hydrophobic interactions. Nuclear magnetic resonance (NMR) spectroscopy in combination with molecular dynamics simulations indicated curcumin is bound in the minor groove, while circular dichroism (CD) spectra suggested minute enhancement in base stacking and a little change in DNA helicity, without significant conformational change of DNA hairpin structure. The DNA:curcumin complex formed with FdU nucleotides rather than Thymidine, demonstrated enhanced cytotoxicity towards oral cancer cells relative to the only FdU substituted hairpin. Fluorescence co-localization demonstrated stability of the complex in biologically relevant conditions, including its cellular uptake. Acridine orange/EtBr staining further confirmed the enhanced cytotoxic effects of the complex, suggesting apoptosis as mode of cell death. Thus, curcumin can be noncovalently complexed to small DNA hairpin for cellular delivery and the complex showed increased cytotoxicity in combination with FdU nucleotides, demonstrating its potential for advanced cancer therapy. Copyright © 2017 Elsevier B.V. All rights reserved.

A conceptual demonstration of freeze desalination-membrane distillation (FD-MD) hybrid desalination process utilizing liquefied natural gas (LNG) cold energy.

Science.gov (United States)

Wang, Peng; Chung, Tai-Shung

2012-09-01

The severe global water scarcity and record-high fossil oil price have greatly stimulated the research interests on new desalination technologies which can be driven by renewable energy or waste energy. In this study, a hybrid desalination process comprising freeze desalination and membrane distillation (FD-MD) processes was developed and explored in an attempt to utilize the waste cold energy released from re-gasification of liquefied natural gas (LNG). The concept of this technology was demonstrated using indirect-contact freeze desalination (ICFD) and direct-contact membrane distillation (DCMD) configurations. By optimizing the ICFD operation parameters, namely, the usage of nucleate seeds, operation duration and feed concentration, high quality drinkable water with a low salinity ∼0.144 g/L was produced in the ICFD process. At the same time, using the optimized hollow fiber module length and packing density in the DCMD process, ultra pure water with a low salinity of 0.062 g/L was attained at a condition of high energy efficiency (EE). Overall, by combining FD and MD processes and adopting the optimized operation parameters, the hybrid FD-MD system has been successfully demonstrated. A high total water recovery of 71.5% was achieved, and the water quality obtained met the standard for drinkable water. In addition, with results from specific energy calculation, it was proven that the hybrid process is an energy-saving process and utilization of LNG cold energy could greatly reduce the total energy consumption. Copyright © 2012 Elsevier Ltd. All rights reserved.

Design of novel SOI 1 × 4 optical power splitter using seven horizontally slotted waveguides

Science.gov (United States)

Katz, Oded; Malka, Dror

2017-07-01

In this paper, we demonstrate a compact silicon on insulator (SOI) 1 × 4 optical power splitter using seven horizontal slotted waveguides. Aluminum nitride (AIN) surrounded by silicon (Si) was used to confine the optical field in the slot region. All of the power analysis has been done in transverse magnetic (TM) polarization mode and a compact optical power splitter as short as 14.5 μm was demonstrated. The splitter was designed by using full vectorial beam propagation method (FV-BPM) simulations. Numerical investigations show that this device can work across the whole C-band (1530-1565 nm) with excess loss better than 0.23 dB.

Une dialectique de la pudeur : les pratiques de mise en visibilité de soi sur Facebook

OpenAIRE

Mell , Laurent

2017-01-01

L’amplification des usages des technologies de l’information et de la communication (TIC), et plus particulièrement des réseaux socionumériques, ont induit des évolutions significatives dans le rapport des individus aux normes relatives à la pudeur. Dans cet article, nous proposons de discuter des pratiques de mise en visibilité de soi sur le réseau socionumérique Facebook. Tout d’abord, nous montrons que l’augmentation de la considération pour la vie privée amène à une sélection des informat...

Intratumoral pharmacokinetic analysis by 19F-magnetic resonance spectroscopy and cytostatic in vivo activity of gemcitabine (dFdC) in two small cell lung cancer xenografts

DEFF Research Database (Denmark)

Kristjansen, P E; Quistorff, B; Spang-Thomsen, M

1993-01-01

BACKGROUND: Gemcitabine, 2'2'difluoro-deoxycytidine (dFdC), has shown activity in several preclinical models, and presently the compound is being clinically evaluated in patients with lung cancer and other solid tumors. DESIGN: The cytostatic in vivo activity of dFdC was tested in the two human.......p. every third day, four times were applied. RESULTS AND CONCLUSION: Significant activity of gemcitabine was demonstrated in both SCLC tumor lines. The tumor line 54A is the most sensitive to radiotherapy, doxorubicin, and nitrosoureas; but in this case the 54B tumors were more sensitive to gemcitabine...

Sugar administration to newly emerged Aedes albopictus males increases their survival probability and mating performance.

Science.gov (United States)

Bellini, Romeo; Puggioli, Arianna; Balestrino, Fabrizio; Brunelli, Paolo; Medici, Anna; Urbanelli, Sandra; Carrieri, Marco

2014-04-01

Aedes albopictus male survival in laboratory cages is no more than 4-5 days when kept without any access to sugar indicating their need to feed on a sugar source soon after emergence. We therefore developed a device to administer energetic substances to newly emerged males when released as pupae as part of a sterile insect technique (SIT) programme, made with a polyurethane sponge 4 cm thick and perforated with holes 2 cm in diameter. The sponge was imbibed with the required sugar solution and due to its high retention capacity the sugar solution was available for males to feed for at least 48 h. When evaluated in lab cages, comparing adults emerged from the device with sugar solution vs the device with water only (as negative control), about half of the males tested positive for fructose using the Van Handel anthrone test, compared to none of males in the control cage. We then tested the tool in semi-field and in field conditions with different sugar concentrations (10%, 15%, and 20%) and compared results to the controls fed with water only. Males were recaptured by a battery operated manual aspirator at 24 and 48 h after pupae release. Rather high share 10-25% of captured males tested positive for fructose in recollections in the vicinity of the control stations, while in the vicinity of the sugar stations around 40-55% of males were positive, though variability between replicates was large. The sugar positive males in the control test may have been released males that had access to natural sugar sources found close to the release station and/or wild males present in the environment. Only a slight increase in the proportion of positive males was obtained by increasing the sugar concentration in the feeding device from 10% to 20%. Surprisingly, modification of the device to add a black plastic inverted funnel above the container reduced rather than increased the proportion of fructose positive males collected around the station. No evidence of difference in the

Factors Influencing Self-Regulation in E-learning 2.0: Confirmatory Factor Model | Facteurs qui influencent la maîtrise de soi en cyberapprentissage 2.0 : modèle de facteur confirmative

Directory of Open Access Journals (Sweden)

Hong Zhao

2016-04-01

Full Text Available The importance of self-regulation in e-learning has been well noted in research. Relevant studies have shown a consistent positive correlation between learners’ self-regulation and their success rate in e-learning. Increasing attention has been paid to developing learners’ self-regulated abilities in e-learning. For students, what and how to learn are largely predetermined by the learning environment provided by their institutions. Environmental determinants play a key role in shaping self-regulation in the learning process. This paper reports a study on the influences of the e-learning 2.0 environment on self-regulation. The study identified the factors that influence self-regulation in such an environment and determine the relationships between the factors and self-regulation. A theoretical model to categorize the success factors for self-regulated learning was proposed for this kind of environment. Based on the model, a questionnaire was designed and administered to more than two hundred and fifty distance learning students in Beijing and Hong Kong. Through structural equation modeling (SEM technique, relationships between environmental factors and self-regulation were analyzed. Statistical results showed that several factors affect self-regulation in the e-learning 2.0 environment. They include system quality, information quality, service quality, and user satisfaction. L’importance de la maîtrise de soi en cyberapprentissage a été bien étudiée. Les études pertinentes ont démontré une corrélation positive uniforme entre la maîtrise de soi des apprenants et leurs taux de réussite en apprentissage en ligne. Une attention croissante a été portée au développement des aptitudes de maîtrise de soi des élèves en cyberapprentissage. Pour les élèves, quoi apprendre et comment sont des questions principalement prédéterminées par l’environnement d’apprentissage qu’offrent leurs établissements. Les d

New insights on SOI Tunnel FETs with low-temperature process flow for CoolCube™ integration

Science.gov (United States)

Diaz Llorente, C.; Le Royer, C.; Batude, P.; Fenouillet-Beranger, C.; Martinie, S.; Lu, C.-M. V.; Allain, F.; Colinge, J.-P.; Cristoloveanu, S.; Ghibaudo, G.; Vinet, M.

2018-06-01

This paper reports the fabrication and electrical characterization of planar SOI Tunnel FETs (TFETs) made using a Low-Temperature (LT) process designed for 3D sequential integration. These proof-of-concept TFETs feature junctions obtained by Solid Phase Epitaxy Regrowth (SPER). Their electrical behavior is analyzed and compared to reference samples (regular process using High-Temperature junction formation, HT). Dual ID-VDS measurements verify that the TFET structures present Band-to-Band tunnelling (BTBT) carrier injection and not Schottky Barrier tunnelling. P-mode operating LT TFETs deliver an ON state current similar to that of the HT reference, opening the door towards optimized devices operating with very low threshold voltage VTH and low supply voltage VDD.

Preparative separation of two subsidiary colors of FD&C Yellow No. 5 (Tartrazine) using spiral high-speed counter-current chromatography.

Science.gov (United States)

Weisz, Adrian; Ridge, Clark D; Roque, Jose A; Mazzola, Eugene P; Ito, Yoichiro

2014-05-23

Specifications in the U.S. Code of Federal Regulations for the color additive FD&C Yellow No. 5 (Color Index No. 19140) limit the level of the tetrasodium salt of 4-[(4',5-disulfo[1,1'-biphenyl]-2-yl)hydrazono]-4,5-dihydro-5-oxo-1-(4-sulfophenyl)-1H-pyrazole-3-carboxylic acid and that of the trisodium salt of 4,4'-[4,5-dihydro-5-oxo-4-[(4-sulfophenyl)hydrazono]-1H-pyrazol-1,3-diyl]bis[benzenesulfonic acid], which are subsidiary colors abbreviated as Pk5 and Pk7, respectively. Small amounts of Pk5 and Pk7 are needed by the U.S. Food and Drug Administration for confirmatory analyses and for development of analytical methods. The present study describes the use of spiral high-speed counter-current chromatography (HSCCC) to separate the closely related minor components Pk5 and Pk7 from a sample of FD&C Yellow No. 5 containing ∼3.5% Pk5 and ∼0.7% Pk7. The separations were performed with highly polar organic/high-ionic strength aqueous two-phase solvent systems that were chosen by applying the recently introduced method known as graphic optimization of partition coefficients (Zeng et al., 2013). Multiple ∼1.0g portions of FD&C Yellow No. 5 (totaling 6.4g dye) were separated, using the upper phase of the solvent system 1-butanol/abs. ethanol/saturated ammonium sulfate/water, 1.7:0.3:1:1, v/v/v/v, as the mobile phase. After removing the ammonium sulfate from the HSCCC-collected fractions, these separations resulted in an enriched dye mixture (∼160mg) of which Pk5 represented ∼46% and Pk7, ∼21%. Separation of the enriched mixture, this time using the lower phase of that solvent system as the mobile phase, resulted in ∼61mg of Pk5 collected in fractions whose purity ranged from 88.0% to 92.7%. Pk7 (20.7mg, ∼83% purity) was recovered from the upper phase of the column contents. Application of this procedure also resulted in purifying the major component of FD&C Yellow No. 5 to >99% purity. The separated compounds were characterized by high-resolution mass

Assessment of metal retention in newly constructed highway embankments.

Science.gov (United States)

Werkenthin, Moritz; Kluge, Björn; Wessolek, Gerd

2016-12-01

Newly constructed embankments should provide both a specific bearing capacity to enable trafficability in emergency cases and a sufficient pollutant retention capacity to protect the groundwater. A number of lysimeters were installed along the A115 highway to determine total and dissolved metal concentrations in road runoff and in the soil solution of newly constructed embankments. Dissolved concentrations in soil solution of the embankments did not exceed the trigger values of the German legislation. Depending on the metal, total concentrations in soil solution were more than twice as high as dissolved concentrations. The high infiltration rates lead to increased groundwater recharge beneath the embankments (up to 4100 mm a -1 ). Although metal concentrations were not problematic from the legislators' point of view, the elevated infiltration rates beside the road facilitated the transfer of high metal loads into deeper soil layers and potentially into the groundwater as well.

NEWLY-PACKAGED BALI TOURIST PERFORMING ARTS IN THE PERSPECTIVE OF CULTURAL STUDIES

Directory of Open Access Journals (Sweden)

Ni Made Ruastiti

2012-11-01

Full Text Available This research is focused on the newly packaged tourist performing arts; they are anew concept and seem to be different from the general tourist performing arts. They arepackaged from various components of Balinese arts and managed as large scale-touristperforming arts in terms of materials, space, and time of their performances. The researchercalls them new types of Bali tourist performing arts because how they are presented isnew and different from the traditional tourist performing arts which are simply performed.In this research, the newly-packaged performing arts are analyzed in the perspective ofcultural studies.The research was carried out at three palaces in Bali; they are Mengwi Palace inBadung regency, Anyar Palace at Kerambitan, Tabanan regency, and Banyuning Palace atBongkasa, Badung regency. There are three main problems to be discussed: firstly, how dothe tourist performing arts emerge in all the palaces? Secondly, are they related to thetourist industry developed in the palaces?, thirdly, what is the impact and meaning of themfor the sake of the palaces, society, and Balinese culture? The researcher uses a qualitativemethod and an interdisciplinary approach as characteristics of cultural studies. The theoriesused are hegemony, deconstruction, and structuration.The result shows that the tourism development at all the palaces has made the localsociety become more critical. The money-oriented economy based on the spirit of gettingbenefit has made the emergence of comodification in all sectors of life. The emergence oftourist industry at the palaces has led to the idea of showing all of the useful art and culturalpotentials which at the palaces and their surroundings. Theoretically, the palaces can bestated to have deconstructed the concept of presenting the Bali tourist performing arts into anew one, that is, “the newly packaged Bali tourist performing arts”.It has been observed that all the palaces have developed t “Newly

Modeling and analysis of surface potential of single gate fully depleted SOI MOSFET using 2D-Poisson's equation

Science.gov (United States)

Mani, Prashant; Tyagi, Chandra Shekhar; Srivastav, Nishant

2016-03-01

In this paper the analytical solution of the 2D Poisson's equation for single gate Fully Depleted SOI (FDSOI) MOSFET's is derived by using a Green's function solution technique. The surface potential is calculated and the threshold voltage of the device is minimized for the low power consumption. Due to minimization of threshold voltage the short channel effect of device is suppressed and after observation we obtain the device is kink free. The structure and characteristics of SingleGate FDSOI MOSFET were matched by using MathCAD and silvaco respectively.

A linear 180 nm SOI CMOS antenna switch module using integrated passive device filters for cellular applications

Science.gov (United States)

Jie, Cui; Lei, Chen; Peng, Zhao; Xu, Niu; Yi, Liu

2014-06-01

A broadband monolithic linear single pole, eight throw (SP8T) switch has been fabricated in 180 nm thin film silicon-on-insulator (SOI) CMOS technology with a quad-band GSM harmonic filter in integrated passive devices (IPD) technology, which is developed for cellular applications. The antenna switch module (ASM) features 1.2 dB insertion loss with filter on 2G bands and 0.4 dB insertion loss in 3G bands, less than -45 dB isolation and maximum -103 dB intermodulation distortion for mobile front ends by applying distributed architecture and adaptive supply voltage generator.

Coordinative compounds of molybdenum and vanadium as possible stimulators of extracellular cellulases biosynthesis of micromycetes Penicillium expansum CNMN FD 05 C

International Nuclear Information System (INIS)

Chilochi, A.A.; Tyurina, Zh.P.; Klapko, S.F.; Lablyuk, S.V.; Pasha, L.I.; Bologa, O.A.; Koropchanu, Eh.B.; Rizha, A.P.

2012-01-01

The effect of coordinative compounds of molybdenum and vanadium on the biosynthesis of cellulosolytic enzymatic complex (endoglucanases, celobiohydrolases, β-glucosidases) of the fungal strain Penicillium expansum CNMN FD 05C was investigated. It was established that complexes of molybdenum, which contain amino acids in its composition, have a neutral effect on the activity of endoglucanases, inhibit celobiohydrolases (80-90%) and stimulate the activity of β-glucosidases. Among the most effective stimulators of β-glucosidases synthesis, the complex MoO 2 (ac.ac.)Gly may be mentioned, that increases the enzymatic activity by 47.8-67.0%. This complex can be used to obtain an enzymatic preparation with a high content of β-glucosidases. The metal complex (NH 4 ) 2 VO 3 Gly stimulates the activity of enzymes of the cellulosolytic complex of the fungi Penicillium expansum CNMN FD 05C, increasing the endogluconasic activity by 45%, cellobiohydrolasic by 32% and β-glucosidasic by 40%.

An emerging indication of FDG-PET: pleural tumours

International Nuclear Information System (INIS)

Balogova, S.; Kerrou, K.; Montravers, F.; Grahek, D.; Aide, N.; Jacob, T.; Younsi, N.; Cailleux, N.; Talbot, J.N.

2003-01-01

The diagnosis and staging of malignant pleural tumours is difficult by means of radiology and also histology. Nevertheless an early diagnose, in particular in those people exposed to asbestos, and an accurate staging are key factors for a better survival. There is thus a potential role for FD G imaging in these relatively rare cancers. In our series, were are currently able to evaluate 22 FD G examinations performed in 16 patients referred for apparently isolated pleural lesions. Twelve FD G examinations were performed with a dedicated PET machine (C-PET, Adac) and ten with a coincidence detection gamma camera (Irix, Picker). The precise clinical settings were the following: characterisation of pleural masses or search for the unknown primary tumour in case of adenocarcinoma (6 cases), staging of a mesothelioma (5 cases), suspicion of recurrence and/or residual lesions (11 cases). The pleural lesions took-up FD G in all cases. By adding our results to data of the five previously published studies, the sensitivity for detecting malignant pleural lesions that are not yet characterised as primary pleural cancer is 99% and the specificity 79%. There was in our series one false positive result due to an inflammatory lesion. False negative results for the detection of lymph node invasion occurred in three patients and were in relation with an infra-centimetric size and the difficulty to distinguish, on FD G images, mediastinal lymph nodes from a widespread pleural and pulmonary extension of cancer. A change in patient management was induced by the FD G examination in 4 patients (25%) and the evolution confirmed that the choice was appropriate. Unknown lesions that could have modified the management were discovered in two other patients. This study highlights the fact that FD G imaging has an impact on the management of patients with solitary pleural lesions and can detect recurrences, in some cases even more accurately than invasive procedures with histology. From our

Estimated daily intake and safety of FD&C food-colour additives in the US population.

Science.gov (United States)

Bastaki, Maria; Farrell, Thomas; Bhusari, Sachin; Bi, Xiaoyu; Scrafford, Carolyn

2017-06-01

A refined exposure assessment was undertaken to calculate the estimated daily intake (EDI) of the seven FD&C straight-colour additives and five FD&C colour lakes ('synthetic' food colours) approved in the United States. The EDIs were calculated for the US population as a whole and specific age groups, including children aged 2-5 and 6-12 years, adolescents aged 13-18 years, and adults aged 19 or more y. Actual use data were collected from an industry survey of companies that are users of these colour additives in a variety of products, with additional input from food colour manufacturers. Food-consumption data were obtained from the National Health and Nutrition Examination Survey (NHANES). The assessment was further refined by adjusting the intake to more realistic scenarios based on the fraction of products containing colour within specific food categories using data provided by the Mintel International Group Ltd. The results of the analysis indicate that (1) the use levels reported by the industry are consistent with the concentrations measured analytically by the US Food and Drug Administration; and (2) exposure to food-colour additives in the United States by average and high-intake consumers is well below the acceptable daily intake (ADI) of each colour additive as published by the Joint WHO/FAO Committee on Food Additives (JECFA) and allows wide margins of safety. It is concluded that food colour use as currently practised in the United States is safe and does not result in excessive exposure to the population, even at conservative ranges of food consumption and levels of use.

Emergency preparedness

International Nuclear Information System (INIS)

1997-01-01

In 1996 the Nuclear Regulatory Authority of the Slovak Republic (NRA SR) continued in systematic development of its activities in the field of emergency planning according to the concept adopted by the Authority and according to the concept for building Emergency headquarters (EH) adopted after establishing of Emergency Response Centre (ERC). Major efforts were focused not only on building up a quality EH, but also tasks associated with completion and incorporation of ERC into emergency planning and emergency managing. An important role in building ERC was played by international missions. Significant position among these missions was taken by missions from Great Britain, which in the past years made a significant contribution to building up ERC. These missions focused on review of newly created standard procedures, preparation and implementation of first emergency exercises of the EH. The emergency exercises in which NRA SR took place in 1996 are reviewed. In order to make the co-operation of the Authority with the selected Army units of SR more effective in solving extraordinary situations in nuclear energy, an agreement was signed between NRA SR and the Headquarters of the Army of SR, which will help significantly to the objective

Eksempler på bruk av koblinger mellom helseundersøkelser og FD-trygd for forskning under den trygdemedisinske modellen, attraksjonsmodellen og utstøtningsmodellen

Directory of Open Access Journals (Sweden)

Arnstein Mykletun

2010-01-01

Full Text Available Vi har i løpet av de siste fem årene jobbet med datakoblinger mellom Helseundersøkelsene i Hordaland (HUSK, 1997-99 og Nord-Trøndelag (HUNT, 1984-86, 1995-97, 2006-08 til FD-trygd (fra 1992. Ved kombinasjoner av helseundersøkelser og FD-trygd kan epidemiologiske studier med tverrsnittsdesign, prospektive design eller retrospektive design gjennomføres. Det eksisterer imidlertid utfordringer både formelt og datateknisk ved etablering av slike koblinger. Vi har erfart at koblingene er anvendelige for forskning på årsaker til uføretrygd, og at vi treffer et internasjonalt publikum med publikasjoner basert på disse data. I det følgende vil det bli gitt noen eksempler på hvordan disse dataressursene kan utnyttes i studier av årsaker til arbeidsuførhet i henhold til den trygdemedisinske modellen, attraksjonsmodellen og utstøtningsmodellen. Mykletun A, Øverland S. Examples of uses of linkages between health surveys and FD-trygd for research using medical models and theoretical push and pull models. Nor J Epidemiol 2009; 19 (2: 127-137. ENGLISH SUMMARYOver the last five years, we have employed data from the Hordaland Health Study (HUSK, 1997-99 and the Nord-Trøndelag Health Studies (HUNT, 1984-86, 1995-97, 2006-08 in linkage with national registries of disability benefits (FD-trygd, running from 1992. The combination of these resources, allows studies using cross-sectional, prospective or retrospective designs. The establishing of these combined datasets involves numerous formal and technical challenges, but the resulting data are useful in disability benefit research and publications employing them have been welcomed by an international readership. In the following, we will provide examples of how these data can be used to broaden our understanding of disability benefits in perspectives of the medical model, as well as theoretical push,- and pull models.

Mechanism of floating body effect mitigation via cutting off source injection in a fully-depleted silicon-on-insulator technology

International Nuclear Information System (INIS)

Huang Pengcheng; Chen Shuming; Chen Jianjun

2016-01-01

In this paper, the effect of floating body effect (FBE) on a single event transient generation mechanism in fully depleted (FD) silicon-on-insulator (SOI) technology is investigated using three-dimensional technology computer-aided design (3D-TCAD) numerical simulation. The results indicate that the main SET generation mechanism is not carrier drift/diffusion but floating body effect (FBE) whether for positive or negative channel metal oxide semiconductor (PMOS or NMOS). Two stacking layout designs mitigating FBE are investigated as well, and the results indicate that the in-line stacking (IS) layout can mitigate FBE completely and is area penalty saving compared with the conventional stacking layout. (paper)

Proposal for fabrication-tolerant SOI polarization splitter-rotator based on cascaded MMI couplers and an assisted bi-level taper.

Science.gov (United States)

Wang, Jing; Qi, Minghao; Xuan, Yi; Huang, Haiyang; Li, You; Li, Ming; Chen, Xin; Jia, Qi; Sheng, Zhen; Wu, Aimin; Li, Wei; Wang, Xi; Zou, Shichang; Gan, Fuwan

2014-11-17

A novel silicon-on-insulator (SOI) polarization splitter-rotator (PSR) with a large fabrication tolerance is proposed based on cascaded multimode interference (MMI) couplers and an assisted mode-evolution taper. The tapers are designed to adiabatically convert the input TM(0) mode into the TE(1) mode, which will output as the TE(0) mode after processed by the subsequent MMI mode converter, 90-degree phase shifter (PS) and MMI 3 dB coupler. The numerical simulation results show that the proposed device has a silicon photonics technology.

A linear 180 nm SOI CMOS antenna switch module using integrated passive device filters for cellular applications

International Nuclear Information System (INIS)

Cui Jie; Chen Lei; Liu Yi; Zhao Peng; Niu Xu

2014-01-01

A broadband monolithic linear single pole, eight throw (SP8T) switch has been fabricated in 180 nm thin film silicon-on-insulator (SOI) CMOS technology with a quad-band GSM harmonic filter in integrated passive devices (IPD) technology, which is developed for cellular applications. The antenna switch module (ASM) features 1.2 dB insertion loss with filter on 2G bands and 0.4 dB insertion loss in 3G bands, less than −45 dB isolation and maximum −103 dB intermodulation distortion for mobile front ends by applying distributed architecture and adaptive supply voltage generator. (semiconductor integrated circuits)

Reduced nonlinearities in 100-nm high SOI waveguides

Science.gov (United States)

Lacava, C.; Marchetti, R.; Vitali, V.; Cristiani, I.; Giuliani, G.; Fournier, M.; Bernabe, S.; Minzioni, P.

2016-03-01

Here we show the results of an experimental analysis dedicated to investigate the impact of optical non linear effects, such as two-photon absorption (TPA), free-carrier absorption (FCA) and free-carrier dispersion (FCD), on the performance of integrated micro-resonator based filters for application in WDM telecommunication systems. The filters were fabricated using SOI (Silicon-on-Insulator) technology by CEA-Leti, in the frame of the FP7 Fabulous Project, which aims to develop low-cost and high-performance integrated optical devices to be used in new generation passive optical- networks (NG-PON2). Different designs were tested, including both ring-based structures and racetrack-based structures, with single-, double- or triple- resonator configuration, and using different waveguide cross-sections (from 500 x 200 nm to 825 x 100 nm). Measurements were carried out using an external cavity tunable laser source operating in the extended telecom bandwidth, using both continuous wave signals and 10 Gbit/s modulated signals. Results show that the use 100-nm high waveguide allows reducing the impact of non-linear losses, with respect to the standard waveguides, thus increasing by more than 3 dB the maximum amount of optical power that can be injected into the devices before causing significant non-linear effects. Measurements with OOK-modulated signals at 10 Gbit/s showed that TPA and FCA don't affect the back-to-back BER of the signal, even when long pseudo-random-bit-sequences (PRBS) are used, as the FCD-induced filter-detuning increases filter losses but "prevents" excessive signal degradation.

Probing the nanoscale interaction forces and elastic properties of organic and inorganic materials using force-distance (F-D) spectroscopy

Science.gov (United States)

Vincent, Abhilash

Due to their therapeutic applications such as radical scavenging, MRI contrast imaging, Photoluminescence imaging, drug delivery, etc., nanoparticles (NPs) have a significant importance in bio-nanotechnology. The reason that prevents the utilizing NPs for drug delivery in medical field is mostly due to their biocompatibility issues (incompatibility can lead to toxicity and cell death). Changes in the surface conditions of NPs often lead to NP cytotoxicity. Investigating the role of NP surface properties (surface charges and surface chemistry) on their interactions with biomolecules (Cells, protein and DNA) could enhance the current understanding of NP cytotoxicity. Hence, it is highly beneficial to the nanotechnology community to bring more attention towards the enhancement of surface properties of NPs to make them more biocompatible and less toxic to biological systems. Surface functionalization of NPs using specific ligand biomolecules have shown to enhance the protein adsorption and cellular uptake through more favorable interaction pathways. Cerium oxide NPs (CNPs also known as nanoceria) are potential antioxidants in cell culture models and understanding the nature of interaction between cerium oxide NPs and biological proteins and cells are important due to their therapeutic application (especially in site specific drug delivery systems). The surface charges and surface chemistry of CNPs play a major role in protein adsorption and cellular uptake. Hence, by tuning the surface charges and by selecting proper functional molecules on the surface, CNPs exhibiting strong adhesion to biological materials can be prepared. By probing the nanoscale interaction forces acting between CNPs and protein molecules using Atomic Force Microscopy (AFM) based force-distance (F-D) spectroscopy, the mechanism of CNP-protein adsorption and CNP cellular uptake can be understood more quantitatively. The work presented in this dissertation is based on the application of AFM in

Design and application of 8-channel SOI-based AWG demultiplexer for CWDM-system

International Nuclear Information System (INIS)

Juhari, Nurjuliana; Menon, P. Susthitha; Ehsan, Abang Annuar; Shaari, Sahbudin

2015-01-01

Arrayed Waveguide Grating (AWG) serving as a demultiplexer (demux) has been designed on SOI platform and was utilized in a Coarse Wavelength Division Multiplexing (CWDM) system ranging from 1471 nm to 1611 nm. The investigation was carried out at device and system levels. At device level, 20 nm (∼ 2500 GHz) channel spacing was successfully simulated using beam propagation method (BPM) under TE mode polarization with a unique double S-shape pattern at arrays region. The performance of optical properties gave the low values of 0.96 dB dB for insertion loss and – 22.38 dB for optical crosstalk. AWG device was then successfully used as demultiplexer in CWDM system when 10 Gb/s data rate was applied in the system. Limitation of signal power due to attenuation and fiber dispersion detected by BER analyzer =10 −9 of the system was compared with theoretical value. Hence, the maximum distance of optical fiber can be achieved

Design and application of 8-channel SOI-based AWG demultiplexer for CWDM-system

Energy Technology Data Exchange (ETDEWEB)

Juhari, Nurjuliana; Menon, P. Susthitha; Ehsan, Abang Annuar; Shaari, Sahbudin [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia (UKM), 43600 UKM Bangi, Selangor (Malaysia)

2015-04-24

Arrayed Waveguide Grating (AWG) serving as a demultiplexer (demux) has been designed on SOI platform and was utilized in a Coarse Wavelength Division Multiplexing (CWDM) system ranging from 1471 nm to 1611 nm. The investigation was carried out at device and system levels. At device level, 20 nm (∼ 2500 GHz) channel spacing was successfully simulated using beam propagation method (BPM) under TE mode polarization with a unique double S-shape pattern at arrays region. The performance of optical properties gave the low values of 0.96 dB dB for insertion loss and – 22.38 dB for optical crosstalk. AWG device was then successfully used as demultiplexer in CWDM system when 10 Gb/s data rate was applied in the system. Limitation of signal power due to attenuation and fiber dispersion detected by BER analyzer =10{sup −9} of the system was compared with theoretical value. Hence, the maximum distance of optical fiber can be achieved.

Effects of ultra-thin Si-fin body widths upon SOI PMOS FinFETs

Science.gov (United States)

Liaw, Yue-Gie; Chen, Chii-Wen; Liao, Wen-Shiang; Wang, Mu-Chun; Zou, Xuecheng

2018-05-01

Nano-node tri-gate FinFET devices have been developed after integrating a 14 Å nitrided gate oxide upon the silicon-on-insulator (SOI) wafers established on an advanced CMOS logic platform. These vertical double gate (FinFET) devices with ultra-thin silicon fin (Si-fin) widths ranging from 27 nm to 17 nm and gate length down to 30 nm have been successfully developed with a 193 nm scanner lithography tool. Combining the cobalt fully silicidation and the CESL strain technology beneficial for PMOS FinFETs was incorporated into this work. Detailed analyses of Id-Vg characteristics, threshold voltage (Vt), and drain-induced barrier lowering (DIBL) illustrate that the thinnest 17 nm Si-fin width FinFET exhibits the best gate controllability due to its better suppression of short channel effect (SCE). However, higher source/drain resistance (RSD), channel mobility degradation due to dry etch steps, or “current crowding effect” will slightly limit its transconductance (Gm) and drive current.

Hypersensitivity to tartrazine (FD&C Yellow No. 5) and other dyes and additives present in foods and pharmaceutical products.

Science.gov (United States)

Lockey, S D

1977-03-01

Tartrazine (FD&C Yellow No. 5) and other allowed certified color additives may have an exacerbating effect in chronic urticaria and asthma sufferers. In the individual patient the only way to determine their relevance is to administer test doses. By altering doses, timing and substances and by interspacing controls a battery of tests has been developed. Methods of testing for sensitization to food additives and analgesics are described.

Hope pictured in drawings by women newly diagnosed with gynecological cancer

DEFF Research Database (Denmark)

Hammer, Kristianna; Hall, Elisabeth; Mogensen, Ole

2013-01-01

BACKGROUND:: In mysterious ways, hope makes life meaningful even in chaotic and uncontrolled situations. When a woman is newly diagnosed with gynecologic cancer, hope is ineffable and needs exploring. Drawings help express ineffable phenomena. OBJECTIVE:: The aim of the study was to explore how...... women newly diagnosed with gynecologic cancer express the meaning of hope in drawings. METHOD:: Participants were 15 women who on the same day had received the diagnosis of gynecologic cancer. They were between 24 and 87 years (median, 52 years) with a variety of gynecologic cancer diagnoses. Data from...... 15 drawings and postdrawing interviews with the women were analyzed using visual and hermeneutic phenomenology. RESULTS:: Three themes emerged: hope as a spirit to move on, hope as energy through nature, and hope as a communion with families. CONCLUSION:: Hope as pictured in drawings often appears...

Design and fabrication of two kind of SOI-based EA-type VOAs

Science.gov (United States)

Yuan, Pei; Wang, Yue; Wu, Yuanda; An, Junming; Hu, Xiongwei

2018-06-01

SOI-based variable optical attenuators based on electro-absorption mechanism are demonstrated in this paper. Two different doping structures are adopted to realize the attenuation: a structure with a single lateral p-i-n diode and a structure with several lateral p-i-n diodes connected in series. The VOAs with lateral p-i-n diodes connected in series (series VOA) can greatly improve the device attenuation efficiency compared to VOAs with a single lateral p-i-n diode structure (single VOA), which is verified by the experimental results that the attenuation efficiency of the series VOA and the single VOA is 3.76 dB/mA and 0.189 dB/mA respectively. The corresponding power consumption at 20 dB attenuation is 202 mW (series VOA) and 424 mW (single VOA) respectively. The raise time is 34.5 ns (single VOA) and 45.5 ns (series VOA), and the fall time is 37 ns (single VOA) and 48.5 ns (series VOA).

Spacer engineered Trigate SOI TFET: An investigation towards harsh temperature environment applications

Science.gov (United States)

Mallikarjunarao; Ranjan, Rajeev; Pradhan, K. P.; Artola, L.; Sahu, P. K.

2016-09-01

In this paper, a novel N-channel Tunnel Field Effect Transistor (TFET) i.e., Trigate Silicon-ON-Insulator (SOI) N-TFET with high-k spacer is proposed for better Sub-threshold swing (SS) and OFF-state current (IOFF) by keeping in mind the sensitivity towards temperature. The proposed model can achieve a Sub-threshold swing less than 35 mV/decade at various temperatures, which is desirable for designing low power CTFET for digital circuit applications. In N-TFET source doping has a significant effect on the ON-state current (ION) level; therefore more electrons will tunnel from source to channel region. High-k Spacer i.e., HfO2 is used to enhance the device performance and also it avoids overlapping of transistors in an integrated circuits (IC's). We have designed a reliable device by performing the temperature analysis on Transfer characteristics, Drain characteristics and also on various performance metrics like ON-state current (ION), OFF-state current (IOFF), ION/IOFF, Trans-conductance (gm), Trans-conductance Generation Factor (TGF), Sub-threshold Swing (SS) to observe the applications towards harsh temperature environment.

The transfer and creation of knowledge within foreign invested R&D in emerging markets

DEFF Research Database (Denmark)

Søberg, Peder Veng

2011-01-01

for transfer - and creation of innovation related knowledge, within newly established foreign invested R&D units in emerging markets, in particular China and India. The paper utilizes extensive empirical data, collected in a holistic multiple case study, including three globally leading MNCs, originating from...... foreign invested R&D units in these countries. Implications, especially relevant for managers, working with newly established foreign invested R&D units in emerging markets, are outlined....

Electrophoresis of fd-virus particles: experiments and an analysis of the effect of finite rod lengths.

Science.gov (United States)

Buitenhuis, Johan

2012-09-18

The electrophoretic mobility of rodlike fd viruses is measured and compared to theory, with the theoretical calculations performed according to Stigter (Stigter, D. Charged Colloidal Cylinder with a Gouy Double-Layer. J. Colloid Interface Sci. 1975, 53, 296-306. Stigter, D. Electrophoresis of Highly Charged Colloidal Cylinders in Univalent Salt- Solutions. 1. Mobility in Transverse Field. J. Phys. Chem. 1978, 82, 1417-1423. Stigter, D. Electrophoresis of Highly Charged Colloidal Cylinders in Univalent Salt Solutions. 2. Random Orientation in External Field and Application to Polyelectrolytes. J. Phys. Chem. 1978, 82, 1424-1429. Stigter, D. Theory of Conductance of Colloidal Electrolytes in Univalent Salt Solutions. J. Phys. Chem. 1979, 83, 1663-1670), who describes the electrophoretic mobility of infinite cylinders including relaxation effects. Using the dissociation constants of the ionizable groups on the surfaces of the fd viruses, we can calculate the mobility without any adjustable parameter (apart from the possible Stern layer thickness). In addition, the approximation in the theoretical description of Stigter (and others) of using a model of infinitely long cylinders, which consequently is independent of the aspect ratio, is examined by performing more elaborate numerical calculations for finite cylinders. It is shown that, although the electrophoretic mobility of cylindrical particles in the limit of low ionic strength depends on the aspect ratio much more than "end effects", at moderate and high ionic strengths the finite and infinite cylinder models differ only to a degree that can be attributed to end effects. Furthermore, the range of validity of the Stokes regime is systematically calculated.

Diversity and strain specificity of plant cell wall degrading enzymes revealed by the draft genome of Ruminococcus flavefaciens FD-1.

Directory of Open Access Journals (Sweden)

Margret E Berg Miller

Full Text Available BACKGROUND: Ruminococcus flavefaciens is a predominant cellulolytic rumen bacterium, which forms a multi-enzyme cellulosome complex that could play an integral role in the ability of this bacterium to degrade plant cell wall polysaccharides. Identifying the major enzyme types involved in plant cell wall degradation is essential for gaining a better understanding of the cellulolytic capabilities of this organism as well as highlighting potential enzymes for application in improvement of livestock nutrition and for conversion of cellulosic biomass to liquid fuels. METHODOLOGY/PRINCIPAL FINDINGS: The R. flavefaciens FD-1 genome was sequenced to 29x-coverage, based on pulsed-field gel electrophoresis estimates (4.4 Mb, and assembled into 119 contigs providing 4,576,399 bp of unique sequence. As much as 87.1% of the genome encodes ORFs, tRNA, rRNAs, or repeats. The GC content was calculated at 45%. A total of 4,339 ORFs was detected with an average gene length of 918 bp. The cellulosome model for R. flavefaciens was further refined by sequence analysis, with at least 225 dockerin-containing ORFs, including previously characterized cohesin-containing scaffoldin molecules. These dockerin-containing ORFs encode a variety of catalytic modules including glycoside hydrolases (GHs, polysaccharide lyases, and carbohydrate esterases. Additionally, 56 ORFs encode proteins that contain carbohydrate-binding modules (CBMs. Functional microarray analysis of the genome revealed that 56 of the cellulosome-associated ORFs were up-regulated, 14 were down-regulated, 135 were unaffected, when R. flavefaciens FD-1 was grown on cellulose versus cellobiose. Three multi-modular xylanases (ORF01222, ORF03896, and ORF01315 exhibited the highest levels of up-regulation. CONCLUSIONS/SIGNIFICANCE: The genomic evidence indicates that R. flavefaciens FD-1 has the largest known number of fiber-degrading enzymes likely to be arranged in a cellulosome architecture. Functional

Device fabrication and transport measurements of FinFETs built with 28Si SOI wafers towards donor qubits in silicon

Energy Technology Data Exchange (ETDEWEB)

Lo, Cheuk Chi; Persaud, Arun; Dhuey, Scott; Olynick, Deirdre; Borondics, Ferenc; Martin, Michael C.; Bechtel, Hans A.; Bokor, Jeffrey; Schenkel, Thomas

2009-06-10

We report fabrication of transistors in a FinFET geometry using isotopically purified silicon-28 -on-insulator (28-SOI) substrates. Donor electron spin coherence in natural silicon is limited by spectral diffusion due to the residual 29Si nuclear spin bath, making isotopically enriched nuclear spin-free 28Si substrates a promising candidate for forming spin quantum bit devices. The FinFET architecture is fully compatible with single-ion implant detection for donor-based qubits, and the donor spin-state readout through electrical detection of spin resonance. We describe device processing steps and discuss results on electrical transport measurements at 0.3 K.

Clinical Overview and Emergency-Department Whiteboards

DEFF Research Database (Denmark)

Hertzum, Morten; Simonsen, Jesper

2010-01-01

In Denmark emergency departments are newly established and still in a process of devising their procedures and technology support. Electronic whiteboards are a means of supporting clinicians in creating and maintaining the overview necessary to provide quality treatment of patients. The concrete ...

Emerging and Re-Emerging Zoonoses of Dogs and Cats

Directory of Open Access Journals (Sweden)

Bruno B. Chomel

2014-07-01

Full Text Available Since the middle of the 20th century, pets are more frequently considered as “family members” within households. However, cats and dogs still can be a source of human infection by various zoonotic pathogens. Among emerging or re-emerging zoonoses, viral diseases, such as rabies (mainly from dog pet trade or travel abroad, but also feline cowpox and newly recognized noroviruses or rotaviruses or influenza viruses can sicken our pets and be transmitted to humans. Bacterial zoonoses include bacteria transmitted by bites or scratches, such as pasteurellosis or cat scratch disease, leading to severe clinical manifestations in people because of their age or immune status and also because of our closeness, not to say intimacy, with our pets. Cutaneous contamination with methicillin-resistant Staphylococcus aureus, Leptospira spp., and/or aerosolization of bacteria causing tuberculosis or kennel cough are also emerging/re-emerging pathogens that can be transmitted by our pets, as well as gastro-intestinal pathogens such as Salmonella or Campylobacter. Parasitic and fungal pathogens, such as echinococcosis, leishmaniasis, onchocercosis, or sporotrichosis, are also re-emerging or emerging pet related zoonoses. Common sense and good personal and pet hygiene are the key elements to prevent such a risk of zoonotic infection.

Mapping Best and Emerging Practices of Project Management

OpenAIRE

Thuesen, Christian; Aaris Boas, Charlotte; Thorslund, Michael V.; Marmier, Francois; Grex, Sara; Lybecker, Søren

2013-01-01

This paper presents results of a study of the connection between Best and Emerging practices of project management. Drawing upon network mapping as an analytical strategy, cases of Best and Emerging practices is analysed and juxtaposed. The case of Best practice is represented by the newly published ISO 21500 standard and the case for the Emerging practices by a deconstruction of the practices of a group of experienced project managers. The network analysis reveals a substantial difference be...

Analysis of the rectangular resonator with butterfly MMI coupler using SOI

Science.gov (United States)

Kim, Sun-Ho; Park, Jun-Hee; Kim, Eudum; Jeon, Su-Jin; Kim, Ji-Hoon; Choi, Young-Wan

2018-02-01

We propose a rectangular resonator sensor structure with butterfly MMI coupler using SOI. It consists of the rectangular resonator, total internal reflection (TIR) mirror, and the butterfly MMI coupler. The rectangular resonator is expected to be used as bio and chemical sensors because of the advantages of using MMI coupler and the absence of bending loss unlike ring resonators. The butterfly MMI coupler can miniaturize the device compared to conventional MMI by using a linear butterfly shape instead of a square in the MMI part. The width, height, and slab height of the rib type waveguide are designed to be 1.5 μm, 1.5 μm, and 0.9 μm, respectively. This structure is designed as a single mode. When designing a TIR mirror, we considered the Goos-Hänchen shift and critical angle. We designed 3:1 MMI coupler because rectangular resonator has no bending loss. The width of MMI is designed to be 4.5 μm and we optimize the length of the butterfly MMI coupler using finite-difference time-domain (FDTD) method for higher Q-factor. It has the equal performance with conventional MMI even though the length is reduced by 1/3. As a result of the simulation, Qfactor of rectangular resonator can be obtained as 7381.

Plasmodium knowlesi from archival blood films: Further evidence that human infections are widely distributed and not newly emergent in Malaysian Borneo

Science.gov (United States)

Lee, Kim-Sung; Cox-Singh, Janet; Brooke, George; Matusop, Asmad; Singh, Balbir

2009-01-01

Human infections with Plasmodium knowlesi have been misdiagnosed by microscopy as Plasmodium malariae due to their morphological similarities. Although microscopy-identified P. malariae cases have been reported in the state of Sarawak (Malaysian Borno) as early as 1952, recent epidemiological studies suggest the absence of indigenous P. malariae infections. The present study aimed to determine the past incidence and distribution of P. knowlesi infections in the state of Sarawak based on archival blood films from patients diagnosed by microscopy as having P. malariae infections. Nested PCR assays were used to identify Plasmodium species in DNA extracted from 47 thick blood films collected in 1996 from patients in seven different divisions throughout the state of Sarawak. Plasmodium knowlesi DNA was detected in 35 (97.2%) of 36 blood films that were positive for Plasmodium DNA, with patients originating from all seven divisions. Only one sample was positive for P. malariae DNA. This study provides further evidence of the widespread distribution of human infections with P. knowlesi in Sarawak and its past occurrence. Taken together with data from previous studies, our findings suggest that P. knowlesi malaria is not a newly emergent disease in humans. PMID:19358848

Ultra-low power high temperature and radiation hard complementary metal-oxide-semiconductor (CMOS) silicon-on-insulator (SOI) voltage reference.

Science.gov (United States)

Boufouss, El Hafed; Francis, Laurent A; Kilchytska, Valeriya; Gérard, Pierre; Simon, Pascal; Flandre, Denis

2013-12-13

This paper presents an ultra-low power CMOS voltage reference circuit which is robust under biomedical extreme conditions, such as high temperature and high total ionized dose (TID) radiation. To achieve such performances, the voltage reference is designed in a suitable 130 nm Silicon-on-Insulator (SOI) industrial technology and is optimized to work in the subthreshold regime of the transistors. The design simulations have been performed over the temperature range of -40-200 °C and for different process corners. Robustness to radiation was simulated using custom model parameters including TID effects, such as mobilities and threshold voltages degradation. The proposed circuit has been tested up to high total radiation dose, i.e., 1 Mrad (Si) performed at three different temperatures (room temperature, 100 °C and 200 °C). The maximum drift of the reference voltage V(REF) depends on the considered temperature and on radiation dose; however, it remains lower than 10% of the mean value of 1.5 V. The typical power dissipation at 2.5 V supply voltage is about 20 μW at room temperature and only 75 μW at a high temperature of 200 °C. To understand the effects caused by the combination of high total ionizing dose and temperature on such voltage reference, the threshold voltages of the used SOI MOSFETs were extracted under different conditions. The evolution of V(REF) and power consumption with temperature and radiation dose can then be explained in terms of the different balance between fixed oxide charge and interface states build-up. The total occupied area including pad-ring is less than 0.09 mm2.

Line-edge roughness induced single event transient variation in SOI FinFETs

International Nuclear Information System (INIS)

Wu Weikang; An Xia; Jiang Xiaobo; Chen Yehua; Liu Jingjing; Zhang Xing; Huang Ru

2015-01-01

The impact of process induced variation on the response of SOI FinFET to heavy ion irradiation is studied through 3-D TCAD simulation for the first time. When FinFET biased at OFF state configuration (V gs = 0, V ds = V dd ) is struck by a heavy ion, the drain collects ionizing charges under the electric field and a current pulse (single event transient, SET) is consequently formed. The results reveal that with the presence of line-edge roughness (LER), which is one of the major variation sources in nano-scale FinFETs, the device-to-device variation in terms of SET is observed. In this study, three types of LER are considered: type A has symmetric fin edges, type B has irrelevant fin edges and type C has parallel fin edges. The results show that type A devices have the largest SET variation while type C devices have the smallest variation. Further, the impact of the two main LER parameters, correlation length and root mean square amplitude, on SET variation is discussed as well. The results indicate that variation may be a concern in radiation effects with the down scaling of feature size. (paper)

High temperature piezoresistive {beta}-SiC-on-SOI pressure sensor for combustion engines

Energy Technology Data Exchange (ETDEWEB)

Berg, J. von; Ziermann, R.; Reichert, W.; Obermeier, E. [Tech. Univ. Berlin (Germany). Microsensor and Actuator Technol. Center; Eickhoff, M.; Kroetz, G. [Daimler Benz AG, Munich (Germany); Thoma, U.; Boltshauser, T.; Cavalloni, C. [Kistler Instrumente AG, Winterthur (Switzerland); Nendza, J.P. [TRW Deutschland GmbH, Barsinghausen (Germany)

1998-08-01

For measuring the cylinder pressure in combustion engines of automobiles a high temperature pressure sensor has been developed. The sensor is made of a membrane based piezoresistive {beta}-SiC-on-SOI (SiCOI) sensor chip and a specially designed housing. The SiCOI sensor was characterized under static pressures of up to 200 bar in the temperature range between room temperature and 300 C. The sensitivity of the sensor at room temperature is approximately 0.19 mV/bar and decreases to about 0.12 mV/bar at 300 C. For monitoring the dynamic cylinder pressure the sensor was placed into the combustion chamber of a gasoline engine. The measurements were performed at 1500 rpm under different loads, and for comparison a quartz pressure transducer from Kistler AG was used as a reference. The maximum pressure at partial load operation amounts to about 15 bar. The difference between the calibrated SiCOI sensor and the reference sensor is significantly less than 1 bar during the whole operation. (orig.) 8 refs.

Investigation of the stability of polysilicon layers in SOI-structures under irradiation by electrons and hard magnetic field influence

Directory of Open Access Journals (Sweden)

Khoverko Yu. N.

2010-10-01

Full Text Available The properties of recrystallized polysilicon on insulator layers of p-type conductive SOI-structures with different carrier concentration irradiated with high-energy electrons flow about 1017 сm–2 in temperature range 4,2—300 К and high magnetic fields were investigated. It was found that heavily doped laser recrystallized polysilicon on insulator layers show its radiation resistance under irradiation with high-energy electrons and magnetoresistance of such material remains quite low in magnetic field about 14 T does not exceed 1—2%. Such qulity can be applied in designing of microelectronic sensors of mechanical values operable in hard conditions of exploitation.

Simulating Photons and Plasmons in a Three-dimensional Lattice

International Nuclear Information System (INIS)

Pletzer, A.; Shvets, G.

2002-01-01

Three-dimensional metallic photonic structures are studied using a newly developed mixed finite element-finite difference (FE-FD) code, Curly3d. The code solves the vector Helmholtz equation as an eigenvalue problem in the unit cell of a triply periodic lattice composed of conductors and/or dielectrics. The mixed FE-FD discretization scheme ensures rapid numerical convergence of the eigenvalue and allows the code to run at low resolution. Plasmon and photonic band structure calculations are presented

A proteomics method using immunoaffinity fluorogenic derivatization-liquid chromatography/tandem mass spectrometry (FD-LC-MS/MS) to identify a set of interacting proteins.

Science.gov (United States)

Nakata, Katsunori; Saitoh, Ryoichi; Ishigai, Masaki; Imai, Kazuhiro

2018-02-01

Biological functions in organisms are usually controlled by a set of interacting proteins, and identifying the proteins that interact is useful for understanding the mechanism of the functions. Immunoprecipitation is a method that utilizes the affinity of an antibody to isolate and identify the proteins that have interacted in a biological sample. In this study, the FD-LC-MS/MS method, which involves fluorogenic derivatization followed by separation and quantification by HPLC and finally identification of proteins by HPLC-tandem mass spectrometry, was used to identify proteins in immunoprecipitated samples, using heat shock protein 90 (HSP90) as a model of an interacting protein in HepaRG cells. As a result, HSC70 protein, which was known to form a complex with HSP90, was isolated, together with three different types of HSP90-beta. The results demonstrated that the proposed immunoaffinity-FD-LC-MS/MS method could be useful for simultaneously detecting and identifying the proteins that interact with a certain protein. Copyright © 2017 John Wiley & Sons, Ltd.

Single halo SDODEL n-MOSFET: an alternative low-cost pseudo-SOI with better analog performance

Science.gov (United States)

Sarkar, Partha; Mallik, Abhijit; Sarkar, Chandan Kumar

2009-03-01

In this paper, with the help of extensive TCAD simulations, we investigate the analog performance of source/drain on depletion layer (SDODEL) MOSFETs with a single-halo (SH) implant near the source side of the channel. We use the SH implant in such a structure for the first time. The analog performance parameters in SH SDODEL MOSFETs are compared to those in SH MOSFETs as well as in SH SOI MOSFETs. In addition to reduced junction capacitance for the SH SDODEL structure as compared to that in bulk SH devices, it has been shown that such devices lead to improved performance and lower power dissipation for sub-100 nm CMOS technologies. Our results show that, in SH SDODEL MOSFETs, there is significant improvement in the intrinsic device performance for analog applications (such as device gain, gm/ID, etc) for the sub-100 nm technologies.

Single halo SDODEL n-MOSFET: an alternative low-cost pseudo-SOI with better analog performance

International Nuclear Information System (INIS)

Sarkar, Partha; Mallik, Abhijit; Sarkar, Chandan Kumar

2009-01-01

In this paper, with the help of extensive TCAD simulations, we investigate the analog performance of source/drain on depletion layer (SDODEL) MOSFETs with a single-halo (SH) implant near the source side of the channel. We use the SH implant in such a structure for the first time. The analog performance parameters in SH SDODEL MOSFETs are compared to those in SH MOSFETs as well as in SH SOI MOSFETs. In addition to reduced junction capacitance for the SH SDODEL structure as compared to that in bulk SH devices, it has been shown that such devices lead to improved performance and lower power dissipation for sub-100 nm CMOS technologies. Our results show that, in SH SDODEL MOSFETs, there is significant improvement in the intrinsic device performance for analog applications (such as device gain, g m /I D , etc) for the sub-100 nm technologies

The subject of pedagogy from theory to practice--the view of newly registered nurses.

Science.gov (United States)

Ivarsson, Bodil; Nilsson, Gunilla

2009-07-01

The aim was to describe, from the newly registered nurses' perspective, specific events when using their pedagogical knowledge in their everyday clinical practice. The design was qualitative and the critical incident technique was used. Data was collected via interviews with ten newly registered nurses who graduated from the same University program 10 months earlier and are now employed at a university hospital. Two categories emerged in the analyses. The first category was "Pedagogical methods in theory" with the sub-categories Theory and the application of the course in practice, Knowledge of pedagogy and Information as a professional competence. The second category was "Pedagogical methods in everyday clinical practice" with sub-categories Factual knowledge versus pedagogical knowledge, Information and relatives, Difficulties when giving information, Understanding information received, Pedagogical tools, Collaboration in teams in pedagogical situations, and Time and giving information. By identifying specific events regarding pedagogical methods the findings can be useful for everyone from teachers and health-care managers to nurse students and newly registered nurses, to improve teaching methods in nurse education.

Monolithic silicon photonics in a sub-100nm SOI CMOS microprocessor foundry: progress from devices to systems

Science.gov (United States)

Popović, Miloš A.; Wade, Mark T.; Orcutt, Jason S.; Shainline, Jeffrey M.; Sun, Chen; Georgas, Michael; Moss, Benjamin; Kumar, Rajesh; Alloatti, Luca; Pavanello, Fabio; Chen, Yu-Hsin; Nammari, Kareem; Notaros, Jelena; Atabaki, Amir; Leu, Jonathan; Stojanović, Vladimir; Ram, Rajeev J.

2015-02-01

We review recent progress of an effort led by the Stojanović (UC Berkeley), Ram (MIT) and Popović (CU Boulder) research groups to enable the design of photonic devices, and complete on-chip electro-optic systems and interfaces, directly in standard microelectronics CMOS processes in a microprocessor foundry, with no in-foundry process modifications. This approach allows tight and large-scale monolithic integration of silicon photonics with state-of-the-art (sub-100nm-node) microelectronics, here a 45nm SOI CMOS process. It enables natural scale-up to manufacturing, and rapid advances in device design due to process repeatability. The initial driver application was addressing the processor-to-memory communication energy bottleneck. Device results include 5Gbps modulators based on an interleaved junction that take advantage of the high resolution of the sub-100nm CMOS process. We demonstrate operation at 5fJ/bit with 1.5dB insertion loss and 8dB extinction ratio. We also demonstrate the first infrared detectors in a zero-change CMOS process, using absorption in transistor source/drain SiGe stressors. Subsystems described include the first monolithically integrated electronic-photonic transmitter on chip (modulator+driver) with 20-70fJ/bit wall plug energy/bit (2-3.5Gbps), to our knowledge the lowest transmitter energy demonstrated to date. We also demonstrate native-process infrared receivers at 220fJ/bit (5Gbps). These are encouraging signs for the prospects of monolithic electronics-photonics integration. Beyond processor-to-memory interconnects, our approach to photonics as a "More-than- Moore" technology inside advanced CMOS promises to enable VLSI electronic-photonic chip platforms tailored to a vast array of emerging applications, from optical and acoustic sensing, high-speed signal processing, RF and optical metrology and clocks, through to analog computation and quantum technology.

A FD/DAMA network architecture for the first generation land mobile satellite services

Science.gov (United States)

Yan, T.-Y.; Wang, C.; Cheng, U.; Dessouky, K.; Rafferty, W.

1989-01-01

A frequency division/demand assigned multiple access (FD/DAMA) network architecture for the first-generation land mobile satellite services is presented. Rationales and technical approaches are described. In this architecture, each mobile subscriber must follow a channel access protocol to make a service request to the network management center before transmission for either open-end or closed-end services. Open-end service requests will be processed on a blocked call cleared basis, while closed-end requests will be processed on a first-come-first-served basis. Two channel access protocols are investigated, namely, a recently proposed multiple channel collision resolution scheme which provides a significantly higher useful throughput, and the traditional slotted Aloha scheme. The number of channels allocated for either open-end or closed-end services can be adaptively changed according to aggregated traffic requests. Both theoretical and simulation results are presented. Theoretical results have been verified by simulation on the JPL network testbed.

Measurement of the external doses at low and high exposures by Agfa personal monitoring film, FD-III-B badge

International Nuclear Information System (INIS)

Mihai, F.; Stochioiu, A.; Bercea, S.; Udup, E.; Tudor, I.

2008-01-01

Full text: A growing number of papers report occupational exposure monitoring by different dosemeter devices. Researches into improvement of the personal dosemeter systems are encouraged. Dose measurement and especially skin dose measurement, are therefore increasingly important. Methods and acceptable dosemeter are not clearly defined and differ from a dosimetry laboratory to other depending on their specifically work procedure and type of dosemeter utilized. Taking into account the characteristic of the work place (industry, research, medical application) dosemeter have to cover a large dose range. The dose assessment problems are manly in low doses range (under 0.2 mSv) and higher doses range. For example, typical for radiation oncology and nuclear accident dosimetry the dose ranges are on the order of 2-70 Gy and 0.1-5 Gy. This work presents the performance of the Agfa personal monitoring film, badge FD-III-B type used in the most of the occupational exposure monitoring from Romania. The FD-III-B dosimeter, manufactured in Romania, is used for monitoring personnel working in radioactive environment - the photodosimetric method is the one of the most reliable method presenting the advantage that the film may be considered as master probe over 30 year and may be utilized during litigation. The dosimeter contains metallic filters of Al, Cu, Pb with different thicknesses, a plastic filter and a open window. The badge FD-III-B is a class B dosimeter according to the dose range and an indices 3 dosimeter from energy range of the radiations in conformity with Romanian Standard in force. Film Agfa 'personal monitoring', tacked in this experiment, consists of a low speed film (D2) and a very sensitive film (D10) designed for recording X-ray, gamma and beta radiation over the doses range 0.1 mSv to 1 Sv. The experiments have been effectuated at different background optical density (base fog) of the films and at different sources of radiation: 13 :7Cs, 60 Co and 24 : 1 Am

Radiation Emergency Preparedness Tools: Psychological First Aid

Centers for Disease Control (CDC) Podcasts

This podcast is an overview of the Clinician Outreach and Communication Activity (COCA) Call: Practical Tools for Radiation Emergency Preparedness. A specialist working with CDC's Radiation Studies Branch describes Psychological First Aid and a newly developed multimedia training program, entitled "Psychological First Aid in Radiation Disasters."

Practicing on Newly Dead

Directory of Open Access Journals (Sweden)

Jewel Abraham

2015-07-01

Full Text Available A newly dead cadaver simulation is practiced on the physical remains of the dead before the onset of rigor mortis. This technique has potential benefits for providing real-life in-situ experience for novice providers in health care practices. Evolving ethical views in health care brings into question some of the ethical aspects associated with newly dead cadaver simulation in terms of justification for practice, autonomy, consent, and the need of disclosure. A clear statement of policies and procedures on newly dead cadaver simulation has yet to be implemented. Although there are benefits and disadvantages to an in-situ cadaver simulation, such practices should not be carried out in secrecy as there is no compelling evidence that suggests such training as imperative. Secrecy in these practices is a violation of honor code of nursing ethics. As health care providers, practitioners are obliged to be ethically honest and trustworthy to their patients. The author explores the ethical aspects of using newly dead cadaver simulation in training novice nursing providers to gain competency in various lifesaving skills, which otherwise cannot be practiced on a living individual. The author explores multiple views on cadaver simulation in relation to ethical theories and practices such as consent and disclosure to family.

On substrate dopant engineering for ET-SOI MOSFETs with UT-BOX

International Nuclear Information System (INIS)

Wu Hao; Xu Miao; Wan Guangxing; Zhu Huilong; Zhao Lichuan; Tong Xiaodong; Zhao Chao; Chen Dapeng; Ye Tianchun

2014-01-01

The importance of substrate doping engineering for extremely thin SOI MOSFETs with ultra-thin buried oxide (ES-UB-MOSFETs) is demonstrated by simulation. A new substrate/backgate doping engineering, lateral non-uniform dopant distributions (LNDD) is investigated in ES-UB-MOSFETs. The effects of LNDD on device performance, V t -roll-off, channel mobility and random dopant fluctuation (RDF) are studied and optimized. Fixing the long channel threshold voltage (V t ) at 0.3 V, ES-UB-MOSFETs with lateral uniform doping in the substrate and forward back bias can scale only to 35 nm, meanwhile LNDD enables ES-UB-MOSFETs to scale to a 20 nm gate length, which is 43% smaller. The LNDD degradation is 10% of the carrier mobility both for nMOS and pMOS, but it is canceled out by a good short channel effect controlled by the LNDD. Fixing V t at 0.3 V, in long channel devices, due to more channel doping concentration for the LNDD technique, the RDF in LNDD controlled ES-UB-MOSFETs is worse than in back-bias controlled ES-UB-MOSFETs, but in the short channel, the RDF for LNDD controlled ES-UB-MOSFET is better due to its self-adaption of substrate doping engineering by using a fixed thickness inner-spacer. A novel process flow to form LNDD is proposed and simulated. (semiconductor devices)

Characterization of pixel sensor designed in 180 nm SOI CMOS technology

Science.gov (United States)

Benka, T.; Havranek, M.; Hejtmanek, M.; Jakovenko, J.; Janoska, Z.; Marcisovska, M.; Marcisovsky, M.; Neue, G.; Tomasek, L.; Vrba, V.

2018-01-01

A new type of X-ray imaging Monolithic Active Pixel Sensor (MAPS), X-CHIP-02, was developed using a 180 nm deep submicron Silicon On Insulator (SOI) CMOS commercial technology. Two pixel matrices were integrated into the prototype chip, which differ by the pixel pitch of 50 μm and 100 μm. The X-CHIP-02 contains several test structures, which are useful for characterization of individual blocks. The sensitive part of the pixel integrated in the handle wafer is one of the key structures designed for testing. The purpose of this structure is to determine the capacitance of the sensitive part (diode in the MAPS pixel). The measured capacitance is 2.9 fF for 50 μm pixel pitch and 4.8 fF for 100 μm pixel pitch at -100 V (default operational voltage). This structure was used to measure the IV characteristics of the sensitive diode. In this work, we report on a circuit designed for precise determination of sensor capacitance and IV characteristics of both pixel types with respect to X-ray irradiation. The motivation for measurement of the sensor capacitance was its importance for the design of front-end amplifier circuits. The design of pixel elements, as well as circuit simulation and laboratory measurement techniques are described. The experimental results are of great importance for further development of MAPS sensors in this technology.

Voluntary emergence and water detection in a newly recognized amphibious fish.

Science.gov (United States)

Magellan, K

2015-06-01

Galaxias 'nebula', a small fish which has adaptations for air-breathing but is not known to be amphibious, voluntarily emerged from water and, in an unfamiliar environment, moved preferentially towards an alternative water source. Nebula may thus be considered one of the few truly amphibious fishes, and their ability to detect water provides a selective advantage which aids their survival in unpredictable natural environments. © 2015 The Fisheries Society of the British Isles.

Determined Initial lead for South Of Isua (SOI) terrain suggests a single homogeneous source for it and possibly other archaean rocks

Science.gov (United States)

Tera, F.

2011-12-01

A Thorogenic-Uranogenic Lead Isotope Plane (TULIP), which entails plotting 206/208 (or its reverse) vs 207/208 (or its reverse), was applied to the Pb data on South of Isua (SOI) by Kamber et al., (1). When the data on 20 samples of these rocks and feldspars are plotted in pairs (each pair is a rock and its feldspar) on TULIP, they fall on 10 mixing lines that converge on a single spot (Fig. 1). This is the end member initial lead (EMIL). The 206/208 & 207/208 so determined are 0.3675 and 0.43525, respectively. From these values one calculates 207/206 = 1.1843 ± 0.0007, for EMIL. This pattern requires either: A) each pair has a singular kappa, K = 232Th/238U, different from others, or B) a pair's in situ decay Pb was homogenized in recent times. On 204/206 vs 207/206 diagram, the whole rocks of SOI define a 3.776 Ga isochron (2). From this and EMIL's 207/206, one obtains: 206/204 = 10.977, 207/204 = 12.974; and 208/204 = 29.756. This singularity of initial Pb contrasts with a deduced variability by the original authors (1). EMIL's radiogenic *(207/206) = 1.6220, gives a single-stage age = 5.9 Ga, indicating inapplicability of its evolution in one stage. Also, the μ calculated from 238U-206Pb for the single stage is different from that inferred from 235U-207Pb, confirming disqualification of this scenario. Reconciliation of the two decay schemes necessitates assumption of EMIL evolution in a minimum of two stages. Starting at 4.563 Ga, five scenarios were assumed: First stage ends and second starts at 4.55, 4.54, 4.53, 4.52 or 4.51 Ga. Second stages end at 3.776 Ga. The calculated μ1 for the first stage are 106, 59.5, 44.6, 36.3 and 30.9 respectively. For μ2 the change is limited, from 5.45 to 5.28. Only an average calculated K for both stages is possible. For the five outlined scenarios it ranges from 1.118 to 1.111. Earlier, Tera (3) observed that initial Pb of the oldest terrestrial reservoir requires evolution in two stages. There too μ1 >> μ2. Data on

Competence of newly qualified registered nurses from a nursing college

Directory of Open Access Journals (Sweden)

BG Morolong

2005-09-01

Full Text Available The South African education and training system, through its policy of outcomesbased education and training, has made competency a national priority. In compliance to this national requirement of producing competent learners, the South African Nursing Council ( 1999 B require that the beginner professional nurse practitioners and midwives have the necessary knowledge, skills, attitudes and values which will enable them to render efficient professional service. The health care system also demands competent nurse practitioners to ensure quality in health care. In the light of competency being a national priority and a statutory demand, the research question that emerges is, how competent are the newly qualified registered nurses from a specific nursing college in clinical nursing education? A quantitative, non-experimental contextual design was used to evaluate the competence of newly qualified registered nurses from a specific nursing college. The study was conducted in two phases. The first phase dealt with the development of an instrument together with its manual through the conceptualisation process. The second phase focused on the evaluation of the competency of newly qualified nurses using the instrument based on the steps of the nursing process. A pilot study was conducted to test the feasibility of the items of the instrument. During the evaluation phase, a sample of twenty-six newly qualified nurses was selected by simple random sampling from a target population of thirty-six newly qualified registered nurses. However, six participants withdrew from the study. Data was collected in two general hospitals where the newly qualified registered nurses were working. Observation and questioning were used as data collection techniques in accordance with the developed instrument. Measures were taken to ensure internal validity and reliability of the results. To protect the rights of the participants, the researcher adhered to DENOSA’S (1998

The effectiveness of newly developed written asthma action plan in improvement of asthma outcome in children.

Science.gov (United States)

Lakupoch, Kingthong; Manuyakorn, Wiparat; Preutthipan, Aroonwan; Kamalaporn, Harutai

2017-09-17

Providing asthma education about controller medication use and appropriate management of asthma exacerbation are the keys to improving the disease outcome. Many asthma guidelines recommend that physicians provide written asthma action plan (WAAP) to all of their asthmatic patients. However, the benefit of WAAP is unclear. Thus, we have created a new WAAP which is simplified in Thai and more user friendly. To determine the effectiveness of the newly developed asthma action plan in management of children with asthma. Asthmatic children who meet inclusion criteria all received the WAAP and they were followed up for 6 months with measurement of outcome variables, such as asthma exacerbation that required emergency room visit, unscheduled OPD visit, admission and school absence in order to compare with the past 6 months before receiving the WAAP. The analyzed outcomes of forty-nine children show significantly reduced emergency room visit (P-value 0.005), unscheduled OPD visit (P-value 0.046), admission days (P-value 0.026) and school absence days (P-value 0.022). Well controlled group and mild severity group were not the factors that contribute to decreased emergency room visit but step up therapy may be the co-factor to decreased ER visit. The results of this study suggest that the provision of newly developed WAAP is useful for improving self-care of asthma patients and reducing asthma exacerbation.

The role of advocacy coalitions in a project implementation process: the example of the planning phase of the At Home/Chez Soi project dealing with homelessness in Montreal.

Science.gov (United States)

Fleury, Marie-Josée; Grenier, Guy; Vallée, Catherine; Hurtubise, Roch; Lévesque, Paul-André

2014-08-01

This study analyzed the planning process (summer 2008 to fall 2009) of a Montreal project that offers housing and community follow-up to homeless people with mental disorders, with or without substance abuse disorders. With the help of the Advocacy Coalition Framework (ACF), advocacy groups that were able to navigate a complex intervention implementation process were identified. In all, 25 people involved in the Montreal At Home/Chez Soi project were surveyed through interviews (n=18) and a discussion group (n=7). Participant observations and documentation (minutes and correspondence) were also used for the analysis. The start-up phase of the At Home/Chez may be broken down into three separate periods qualified respectively as "honeymoon;" "clash of cultures;" and "acceptance & commitment". In each of the planning phases of the At Home/Chez Soi project in Montreal, at least two advocacy coalitions were in confrontation about their specific belief systems concerning solutions to address the recurring homelessness social problem, while a third, more moderate one contributed in rallying most key actors under specified secondary aspects. The study confirms the importance of policy brokers in achieving compromises acceptable to all advocacy coalitions. Copyright © 2014 Elsevier Ltd. All rights reserved.

Athermal and wavelength-trimmable photonic filters based on TiO₂-cladded amorphous-SOI.

Science.gov (United States)

Lipka, Timo; Moldenhauer, Lennart; Müller, Jörg; Trieu, Hoc Khiem

2015-07-27

Large-scale integrated silicon photonic circuits suffer from two inevitable issues that boost the overall power consumption. First, fabrication imperfections even on sub-nm scale result in spectral device non-uniformity that require fine-tuning during device operation. Second, the photonic devices need to be actively corrected to compensate thermal drifts. As a result significant amount of power is wasted if no athermal and wavelength-trimmable solutions are utilized. Consequently, in order to minimize the total power requirement of photonic circuits in a passive way, trimming methods are required to correct the device inhomogeneities from manufacturing and athermal solutions are essential to oppose temperature fluctuations of the passive/active components during run-time. We present an approach to fabricate CMOS backend-compatible and athermal passive photonic filters that can be corrected for fabrication inhomogeneities by UV-trimming based on low-loss amorphous-SOI waveguides with TiO2 cladding. The trimming of highly confined 10 μm ring resonators is proven over a free spectral range retaining athermal operation. The athermal functionality of 2nd-order 5 μm add/drop microrings is demonstrated over 40°C covering a broad wavelength interval of 60 nm.

Compact Si-based asymmetric MZI waveguide on SOI as a thermo-optical switch

Science.gov (United States)

Rizal, C. S.; Niraula, B.

2018-03-01

A compact low power consuming asymmetric MZI based optical modulator with fast response time has been proposed on SOI platform. The geometrical and performance characteristics were analyzed in depth and optimized using coupled mode analysis and FDTD simulation tools, respectively. It was tested with and without implementation of thermo-optic (TO) effect. The device showed good frequency modulating characteristics when tested without the implementation of the TO effect. The fabricated device showed quality factor, Q ≈ 10,000, and this value is comparable to the Q of the device simulated with 25% transmission loss, showing FSR of 0.195 nm, FWHM ≈ 0.16 nm, and ER of 13 dB. With TO effect, it showed temperature sensitivity of 0.01 nm/°C and FSR of 0.19 nm. With the heater length of 4.18 mm, the device required 0.26 mW per π shift power with a switching voltage of 0.309 V, response time of 10 μ, and figure-of-merit of 2.6 mW μs. All of these characteristics make this device highly attractive for use in integrated Si photonics network as optical switch and wavelength modulator.

Newly graduated nurses' use of knowledge sources

DEFF Research Database (Denmark)

Voldbjerg, Siri Lygum; Grønkjaer, Mette; Sørensen, Erik Elgaard

2016-01-01

AIM: To advance evidence on newly graduated nurses' use of knowledge sources. BACKGROUND: Clinical decisions need to be evidence-based and understanding the knowledge sources that newly graduated nurses use will inform both education and practice. Qualitative studies on newly graduated nurses' use...... underscoring progression in knowledge use and perception of competence and confidence among newly graduated nurses. CONCLUSION: The transition phase, feeling of confidence and ability to use critical thinking and reflection, has a great impact on knowledge sources incorporated in clinical decisions....... The synthesis accentuates that for use of newly graduated nurses' qualifications and skills in evidence-based practice, clinical practice needs to provide a supportive environment which nurtures critical thinking and questions and articulates use of multiple knowledge sources....

Radiation Emergency Preparedness Tools: Psychological First Aid

Centers for Disease Control (CDC) Podcasts

2010-12-30

This podcast is an overview of the Clinician Outreach and Communication Activity (COCA) Call: Practical Tools for Radiation Emergency Preparedness. A specialist working with CDC's Radiation Studies Branch describes Psychological First Aid and a newly developed multimedia training program, entitled "Psychological First Aid in Radiation Disasters.".  Created: 12/30/2010 by National Center for Environmental Health (NCEH) Radiation Studies Branch and Emergency Risk Communication Branch (ERCB)/Joint Information Center (JIC); Office of Public Health Preparedness and Response (OPHPR).   Date Released: 1/13/2011.

Characterization of dielectric materials in thin layers for the development of S.O.I. (Silicon on Insulator) substrates

International Nuclear Information System (INIS)

Gruber, Olivier

1999-01-01

This thesis deals with the characterization of oxide layer placed inside S.O.I. substrates and submitted to irradiation. This type of material is used for the development of hardened electronic components, that is to say components able to be used in a radiative environment. The irradiation induces charges (electrons or holes) in the recovered oxide. A part of these charges is trapped which leads to changes of the characteristics of the electronic components made on these substrates. The main topic of this study is the characterization of trapping properties of recovered oxides and more particularly of 'Unibond' material carried out with a new fabrication process: the 'smart-cut' process. This work is divided into three parts: - study with one carrier: this case is limited to low radiation doses where is only observed holes trapping. The evolution of the physical and chemical properties of the 'Unibond' material recovered oxide has been revealed, this evolution being due to the fabrication process. - Study with two carriers: in this case, there is trapping of holes and electrons. This type of trapping is observed in the case of strong radiation doses. A new type of electrons traps has been identified with the 'Unibond' material oxide. The transport and the trapping of holes and electrons have been studied in the case of transient phenomena created by short radiative pulses. This study has been carried out using a new measurement method. - Study with three carriers: here are added to holes and electrons the protons introduced in the recovered oxide by the annealing under hydrogen. These protons are movable when they are submitted to the effect of an electric field and they induce a memory effect according to their position in the oxide. These different works show that the 'Unibond' material is a very good solution for the future development of S.O.I. (author) [fr

Shared decision making in the management of children with newly diagnosed immune thrombocytopenia.

Science.gov (United States)

Beck, Carolyn E; Boydell, Katherine M; Stasiulis, Elaine; Blanchette, Victor S; Llewellyn-Thomas, Hilary; Birken, Catherine S; Breakey, Vicky R; Parkin, Patricia C

2014-10-01

This study aimed to examine the treatment decision-making process for children hospitalized with newly diagnosed immune thrombocytopenia (ITP). Using focus groups, we studied children with ITP, parents of children with ITP, and health care professionals, inquiring about participants' experience with decision support and decision making in newly diagnosed ITP. Data were examined using thematic analysis. Themes that emerged from children were feelings of "anxiety, fear, and confusion"; the need to "understand information"; and "treatment choice," the experience of which was age dependent. For parents, "anxiety, fear, and confusion" was a dominant theme; "treatment choice" revealed that participants felt directed toward intravenous immune globulin (IVIG) for initial treatment. For health care professionals, "comfort level" highlighted factors contributing to professionals' comfort with offering options; "assumptions" were made about parental desire for participation in shared decision making (SDM) and parental acceptance of treatment options; "providing information" was informative regarding modes of facilitating SDM; and "treatment choice" revealed a discrepancy between current practice (directed toward IVIG) and the ideal of SDM. At our center, families of children with newly diagnosed ITP are not experiencing SDM. Our findings support the implementation of SDM to facilitate patient-centered care for the management of pediatric ITP.

Maintaining Professional Commitment as a Newly Credentialed Athletic Trainer in the Secondary School Setting.

Science.gov (United States)

Mazerolle, Stephanie M; Myers, Sarah L; Walker, Stacy E; Kirby, Jessica

2018-03-01

  Professional commitment, or one's affinity and loyalty to a career, has become a topic of interest in athletic training. The expanding research on the topic, however, has omitted newly credentialed athletic trainers (ATs). For an impressionable group of practitioners, transitioning to clinical practice can be stressful.   To explore the professional commitment of newly credentialed ATs in the secondary school setting.   Secondary school.   Qualitative study.   A total of 31 newly credentialed ATs (6 men, 25 women; mean age = 24 ± 3 years) participated. Of these, 17 ATs (4 men, 13 women; mean age = 25 ± 4 years) were employed full time in the secondary school setting, and 14 ATs (2 men, 12 women; mean age = 23.0 ± 2.0 years) were graduate assistant students in the secondary school setting.   All participants completed semistructured interviews, which focused on their experiences in the secondary school setting and transitioning into the role and setting. Transcripts were analyzed using the phenomenologic approach. Creditability was established by peer review, member checks, and researcher triangulation.   Four main findings related to the professional commitment of newly credentialed ATs in the secondary school setting were identified. Work-life balance, professional relationships formed with the student-athletes, enjoyment gained from working in the secondary school setting, and professional responsibility emerged as factors facilitating commitment.   Affective commitment is a primary facilitator of professional commitment. Newly credentialed ATs who enjoy their jobs and have time to engage in nonwork roles are able to maintain a positive professional commitment. Our findings align with the previous literature and help strengthen our understanding that rejuvenation and passion are important to professional commitment.

The Re-Emergence and Emergence of Vector-Borne Rickettsioses in Taiwan

Directory of Open Access Journals (Sweden)

Nicholas T. Minahan

2017-12-01

Full Text Available Rickettsial diseases, particularly vector-borne rickettsioses (VBR, have a long history in Taiwan, with studies on scrub typhus and murine typhus dating back over a century. The climatic and geographic diversity of Taiwan’s main island and its offshore islands provide many ecological niches for the diversification and maintenance of rickettsiae alike. In recent decades, scrub typhus has re-emerged as the most prevalent type of rickettsiosis in Taiwan, particularly in eastern Taiwan and its offshore islands. While murine typhus has also re-emerged on Taiwan’s western coast, it remains neglected. Perhaps more alarming than the re-emergence of these rickettsioses is the emergence of newly described VBR. The first case of human infection with Rickettsia felis was confirmed in 2005, and undetermined spotted fever group rickettsioses have recently been detected. Taiwan is at a unique advantage in terms of detecting and characterizing VBR, as it has universal health coverage and a national communicable disease surveillance system; however, these systems have not been fully utilized for this purpose. Here, we review the existing knowledge on the eco-epidemiology of VBR in Taiwan and recommend future courses of action.

Interpretation manual of emergency cranial tomography

International Nuclear Information System (INIS)

Mejias Soto, Carolina

2012-01-01

A manual has been prepared for the correct evaluation of tomographic studies in emergencies. The literature review was developed selecting printed books, journal articles, electronic of cases in etiopathogenesis, and neuroimaging findings frequently made emergencies. The information has been consulted in major bibliographic databases such as MD-Consult and Med-Line, radiology journals such as: Radiology, Radiographics, Clinics of North America, American Journal of Roetnology and newly available texts on neuroimaging. The manual has been a guide for radiology resident physicians, of the topics of greatest interest to collaborate in the diagnosis, monitoring of patients and therapeutic decisions [es

FDI from Emerging Economies in EU27

DEFF Research Database (Denmark)

Jindra, Björn

This paper scrutinizes FDI from a wide range of emerging economies (including newly industrializing Asian countries, Latin American countries and East European transition economies) that adopted different growth models in the past. The overarching research question of this paper is to which...... the integration of firms from different emerging economies via FDI into the global economy is linked to technological upgrading. We assume that technology seeking in advanced economies should be reflected in the relevance of particular location factors such as knowledge spillover. We analyses a large firm level...

SOI detector with drift field due to majority carrier flow - an alternative to biasing in depletion

Energy Technology Data Exchange (ETDEWEB)

Trimpl, M.; Deptuch, G.; Yarema, R.; /Fermilab

2010-11-01

This paper reports on a SOI detector with drift field induced by the flow of majority carriers. It is proposed as an alternative method of detector biasing compared to standard depletion. N-drift rings in n-substrate are used at the front side of the detector to provide charge collecting field in depth as well as to improve the lateral charge collection. The concept was verified on a 2.5 x 2.5 mm{sup 2} large detector array with 20 {micro}m and 40 {micro}m pixel pitch fabricated in August 2009 using the OKI semiconductor process. First results, obtained with a radioactive source to demonstrate spatial resolution and spectroscopic performance of the detector for the two different pixel sizes will be shown and compared to results obtained with a standard depletion scheme. Two different diode designs, one using a standard p-implantation and one surrounded by an additional BPW implant will be compared as well.

SOI detector with drift field due to majority carrier flow - an alternative to biasing in depletion

International Nuclear Information System (INIS)

Trimpl, M.; Deptuch, G.; Yarema, R.

2010-01-01

This paper reports on a SOI detector with drift field induced by the flow of majority carriers. It is proposed as an alternative method of detector biasing compared to standard depletion. N-drift rings in n-substrate are used at the front side of the detector to provide charge collecting field in depth as well as to improve the lateral charge collection. The concept was verified on a 2.5 x 2.5 mm 2 large detector array with 20 (micro)m and 40 (micro)m pixel pitch fabricated in August 2009 using the OKI semiconductor process. First results, obtained with a radioactive source to demonstrate spatial resolution and spectroscopic performance of the detector for the two different pixel sizes will be shown and compared to results obtained with a standard depletion scheme. Two different diode designs, one using a standard p-implantation and one surrounded by an additional BPW implant will be compared as well.

Mapping Best and Emerging Practices of Project Management

DEFF Research Database (Denmark)

Thuesen, Christian; Aaris Boas, Charlotte; Thorslund, Michael V.

2013-01-01

This paper presents results of a study of the connection between Best and Emerging practices of project management. Drawing upon network mapping as an analytical strategy, cases of Best and Emerging practices is analysed and juxtaposed. The case of Best practice is represented by the newly...... published ISO 21500 standard and the case for the Emerging practices by a deconstruction of the practices of a group of experienced project managers. The network analysis reveals a substantial difference between the Best and Emerging practices. Only two central concepts where shared namely Communication...... and Planning. Of these two concepts Communication where found to be the most central to both the Emerging and Best practices. The analysis further reveals a soft side of project management that is central in the Emerging practice but absent from the Best practices. Although this soft side might be interpreted...

Virtually Nursing: Emerging Technologies in Nursing Education.

Science.gov (United States)

Foronda, Cynthia L; Alfes, Celeste M; Dev, Parvati; Kleinheksel, A J; Nelson, Douglas A; OʼDonnell, John M; Samosky, Joseph T

Augmented reality and virtual simulation technologies in nursing education are burgeoning. Preliminary evidence suggests that these innovative pedagogical approaches are effective. The aim of this article is to present 6 newly emerged products and systems that may improve nursing education. Technologies may present opportunities to improve teaching efforts, better engage students, and transform nursing education.

FD&C Yellow No. 5 (tartrazine) degradation via reactive oxygen species triggered by TiO2 and Au/TiO2 nanoparticles exposed to simulated sunlight.

Science.gov (United States)

Li, Meng; He, Weiwei; Liu, Yi; Wu, Haohao; Wamer, Wayne G; Lo, Y Martin; Yin, Jun-Jie

2014-12-10

When exposed to light, TiO2 nanoparticles (NPs) become photoactivated and create electron/hole pairs as well as reactive oxygen species (ROS). We examined the ROS production and degradation of a widely used azo dye, FD&C Yellow No. 5 (tartrazine), triggered by photoactivated TiO2 NPs. Degradation was found to follow pseudo-first order reaction kinetics where the rate constant increased with TiO2 NP concentration. Depositing Au on the surface of TiO2 largely enhanced electron transfer and ROS generation, which consequently accelerated dye degradation. Alkaline conditions promoted ROS generation and dye degradation. Results from electron spin resonance spin-trap spectroscopy suggested that at pH 7.4, both hydroxyl radical (•OH) and singlet oxygen ((1)O2) were responsible for dye discoloration, whereas at pH 5, the consumption of (1)O2 became dominant. Implications for dye degradation in foods and other consumer products that contain both TiO2 and FD&C Yellow No. 5 as ingredients are discussed.

Towards accurate emergency response behavior

International Nuclear Information System (INIS)

Sargent, T.O.

1981-01-01

Nuclear reactor operator emergency response behavior has persisted as a training problem through lack of information. The industry needs an accurate definition of operator behavior in adverse stress conditions, and training methods which will produce the desired behavior. Newly assembled information from fifty years of research into human behavior in both high and low stress provides a more accurate definition of appropriate operator response, and supports training methods which will produce the needed control room behavior. The research indicates that operator response in emergencies is divided into two modes, conditioned behavior and knowledge based behavior. Methods which assure accurate conditioned behavior, and provide for the recovery of knowledge based behavior, are described in detail

Temperature characteristics research of SOI pressure sensor based on asymmetric base region transistor

Science.gov (United States)

Zhao, Xiaofeng; Li, Dandan; Yu, Yang; Wen, Dianzhong

2017-07-01

Based on the asymmetric base region transistor, a pressure sensor with temperature compensation circuit is proposed in this paper. The pressure sensitive structure of the proposed sensor is constructed by a C-type silicon cup and a Wheatstone bridge with four piezoresistors ({R}1, {R}2, {R}3 and {R}4) locating on the edge of a square silicon membrane. The chip was designed and fabricated on a silicon on insulator (SOI) wafer by micro electromechanical system (MEMS) technology and bipolar transistor process. When the supply voltage is 5.0 V, the corresponding temperature coefficient of the sensitivity (TCS) for the sensor before and after temperature compensation are -1862 and -1067 ppm/°C, respectively. Through varying the ratio of the base region resistances {r}1 and {r}2, the TCS for the sensor with the compensation circuit is -127 ppm/°C. It is possible to use this compensation circuit to improve the temperature characteristics of the pressure sensor. Project supported by the National Natural Science Foundation of China (No. 61471159), the Natural Science Foundation of Heilongjiang Province (No. F201433), the University Nursing Program for Young Scholars with Creative Talents in Heilongjiang Province (No. 2015018), and the Special Funds for Science and Technology Innovation Talents of Harbin in China (No. 2016RAXXJ016).

Si-nanowire-based multistage delayed Mach-Zehnder interferometer optical MUX/DeMUX fabricated by an ArF-immersion lithography process on a 300 mm SOI wafer.

Science.gov (United States)

Jeong, Seok-Hwan; Shimura, Daisuke; Simoyama, Takasi; Horikawa, Tsuyoshi; Tanaka, Yu; Morito, Ken

2014-07-01

We report good phase controllability and high production yield in Si-nanowire-based multistage delayed Mach-Zehnder interferometer-type optical multiplexers/demultiplexers (MUX/DeMUX) fabricated by an ArF-immersion lithography process on a 300 mm silicon-on-insulator (SOI) wafer. Three kinds of devices fabricated in this work exhibit clear 1×4 Ch wavelength filtering operations for various optical frequency spacing. These results are promising for their applications in high-density wavelength division multiplexing-based optical interconnects.

Chemical Composition and Characteristic Odor Compounds in Essential Oil from Alismatis Rhizoma (Tubers of Alisma orientale).

Science.gov (United States)

Miyazawa, Mitsuo; Yoshinaga, Seiji; Kashima, Yusei; Nakahashi, Hiroshi; Hara, Nobuyuki; Nakagawa, Hiroki; Usami, Atsushi

2016-01-01

Chemical composition and potent odorants that contribute to the characteristic odor of essential oil from Alismatis Rhizoma (tubers of Alisma orientale) were investigated by gas chromatography-mass spectrometry (GC-MS), GC-olfactometry (GC-O), aroma extract dilution analysis (AEDA) and relative flavor activity (RFA) methods. Fifty components, representing 94.5% of the total oil, were identified. In this study, we newly identified thirty-nine compounds in the oil from tubers of A. orientale. The major constituents of the essential oil were khusinol (36.2%), δ-elemene (12.4%), germacron (4.1%), alismol (3.8%), β-elemene (3.1%), and α-bisabolol (1.9%). Through sensory analysis, sixteen aroma-active compounds were detected and the key contributing aroma-active compounds were δ-elemene (woody, flavor dilution (FD)-factor = 4, RFA = 0.3) β-elemene (spicy, FD = 5, RFA = 0.7), spathulenol (green, FD = 5, RFA = 1.0), γ-eudesmol (woody, FD = 6, RFA = 1.5), and γ-cadinol (woody, FD = 5, RFA = 1.0). These compounds are thought to contribute to the odor from tubers of A. orientale. These results imply that the essential oil from the tubers of A. orientale deserve further investigations in the phytochemical and medicinal fields.

Plastic and non-plastic variation in growth of newly established clones of Scirpus (Bolboschoenus) maritimus L. grown at different water depths

NARCIS (Netherlands)

Clevering, O.A.; Hundscheid, M.P.J.

1998-01-01

The importance of plastic responses to water depth as compared to non-plastic (developmental) changes in ramet (consisting of a culm e.g., stem with leaves, rhizome spacers and - tuber, and roots) characteristics of newly established clones of the emergent macrophyte Scirpus maritimus L. was

On-chip grating coupler array on the SOI platform for fan-in/fan-out of MCFs with low insertion loss and crosstalk

DEFF Research Database (Denmark)

Ding, Yunhong; Ye, Feihong; Peucheret, Christophe

2015-01-01

We report the design and fabrication of a compact multi-core fiber fan-in/fan-out using a grating coupler array on the SOI platform. The grating couplers are fully-etched, enabling the whole circuit to be fabricated in a single lithography and etching step. Thanks to the apodized design...... for the grating couplers and the introduction of an aluminum reflective mirror, a highest coupling efficiency of -3.8 dB with 3 dB coupling bandwidth of 48 nm and 1.5 dB bandwidth covering the whole C band, together with crosstalk lower than -32 dB are demonstrated. (C)2015 Optical Society of America...

Vibrational imaging of newly synthesized proteins in live cells by stimulated Raman scattering microscopy

Science.gov (United States)

Wei, Lu; Yu, Yong; Shen, Yihui; Wang, Meng C.; Min, Wei

2013-01-01

Synthesis of new proteins, a key step in the central dogma of molecular biology, has been a major biological process by which cells respond rapidly to environmental cues in both physiological and pathological conditions. However, the selective visualization of a newly synthesized proteome in living systems with subcellular resolution has proven to be rather challenging, despite the extensive efforts along the lines of fluorescence staining, autoradiography, and mass spectrometry. Herein, we report an imaging technique to visualize nascent proteins by harnessing the emerging stimulated Raman scattering (SRS) microscopy coupled with metabolic incorporation of deuterium-labeled amino acids. As a first demonstration, we imaged newly synthesized proteins in live mammalian cells with high spatial–temporal resolution without fixation or staining. Subcellular compartments with fast protein turnover in HeLa and HEK293T cells, and newly grown neurites in differentiating neuron-like N2A cells, are clearly identified via this imaging technique. Technically, incorporation of deuterium-labeled amino acids is minimally perturbative to live cells, whereas SRS imaging of exogenous carbon–deuterium bonds (C–D) in the cell-silent Raman region is highly sensitive, specific, and compatible with living systems. Moreover, coupled with label-free SRS imaging of the total proteome, our method can readily generate spatial maps of the quantitative ratio between new and total proteomes. Thus, this technique of nonlinear vibrational imaging of stable isotope incorporation will be a valuable tool to advance our understanding of the complex spatial and temporal dynamics of newly synthesized proteome in vivo. PMID:23798434

Cross-Linking Mast Cell Specific Gangliosides Stimulates the Release of Newly Formed Lipid Mediators and Newly Synthesized Cytokines

Directory of Open Access Journals (Sweden)

Edismauro Garcia Freitas Filho

2016-01-01

Full Text Available Mast cells are immunoregulatory cells that participate in inflammatory processes. Cross-linking mast cell specific GD1b derived gangliosides by mAbAA4 results in partial activation of mast cells without the release of preformed mediators. The present study examines the release of newly formed and newly synthesized mediators following ganglioside cross-linking. Cross-linking the gangliosides with mAbAA4 released the newly formed lipid mediators, prostaglandins D2 and E2, without release of leukotrienes B4 and C4. The effect of cross-linking these gangliosides on the activation of enzymes in the arachidonate cascade was then investigated. Ganglioside cross-linking resulted in phosphorylation of cytosolic phospholipase A2 and increased expression of cyclooxygenase-2. Translocation of 5-lipoxygenase from the cytosol to the nucleus was not induced by ganglioside cross-linking. Cross-linking of GD1b derived gangliosides also resulted in the release of the newly synthesized mediators, interleukin-4, interleukin-6, and TNF-α. The effect of cross-linking the gangliosides on the MAP kinase pathway was then investigated. Cross-linking the gangliosides induced the phosphorylation of ERK1/2, JNK1/2, and p38 as well as activating both NFκB and NFAT in a Syk-dependent manner. Therefore, cross-linking the mast cell specific GD1b derived gangliosides results in the activation of signaling pathways that culminate with the release of newly formed and newly synthesized mediators.

Newly Homeless Youth Typically Return Home

OpenAIRE

Milburn, Norweeta G.; Rosenthal, Doreen; Rotheram-Borus, Mary Jane; Mallett, Shelley; Batterham, Philip; Rice, Eric; Solorio, Rosa

2007-01-01

165 newly homeless adolescents from Melbourne, Australia and 261 from Los Angeles, United States were surveyed and followed for two years. Most newly homeless adolescents returned home (70% U.S., 47% Australia) for significant amounts of time (39% U.S., 17% Australia more than 12 months) within two years of becoming homeless.

Chronic toxicity/carcinogenicity studies of FD & C Yellow No. 5 (tartrazine) in rats.

Science.gov (United States)

Borzelleca, J F; Hallagan, J B

1988-03-01

FD & C Yellow No. 5 was fed to Charles River CD rats as a dietary admixture in two long-term toxicity/carcinogenicity studies. The studies were conducted with an in utero phase in which the compound was administered to the F0 generation rats (60/sex/group) at levels of 0.0, 0.0, 0.1, 1.0 or 2.0% ('original study') and 0.0 or 5.0% ('high-dose study'). The concurrent control groups received the basal diet. After random selection of the F1 animals, the long-term phase was initiated using the same dietary levels with 70 rats of each sex/group, including the three control groups. The maximum exposure to the colouring was 113 and 114 wk for males and females, respectively, in the 'original' study and 122 and 125 wk for males and females, respectively, in the 'high-dose' study. No compound-related effects were noted. The no-adverse-effect level found in this study was 5.0% in the diet providing an average intake of 2641 and 3348 mg/kg/day for male and female rats, respectively.

Molecular and Morphological Characterization of Fasciola spp. Isolated from Different Host Species in a Newly Emerging Focus of Human Fascioliasis in Iran

Science.gov (United States)

Shafiei, Reza; Sarkari, Bahador; Sadjjadi, Seyed Mahmuod; Mowlavi, Gholam Reza; Moshfe, Abdolali

2014-01-01

The current study aimed to find out the morphometric and genotypic divergences of the flukes isolated from different hosts in a newly emerging focus of human fascioliasis in Iran. Adult Fasciola spp. were collected from 34 cattle, 13 sheep, and 11 goats from Kohgiluyeh and Boyer-Ahmad province, southwest of Iran. Genomic DNA was extracted from the flukes and PCR-RFLP was used to characterize the isolates. The ITS1, ITS2, and mitochondrial genes (mtDNA) of NDI and COI from individual liver flukes were amplified and the amplicons were sequenced. Genetic variation within and between the species was evaluated by comparing the sequences. Moreover, morphometric characteristics of flukes were measured through a computer image analysis system. Based on RFLP profile, from the total of 58 isolates, 41 isolates (from cattle, sheep, and goat) were identified as Fasciola hepatica, while 17 isolates from cattle were identified as Fasciola gigantica. Comparison of the ITS1 and ITS2 sequences showed six and seven single-base substitutions, resulting in segregation of the specimens into two different genotypes. The sequences of COI markers showed seven DNA polymorphic sites for F. hepatica and 35 DNA polymorphic sites for F. gigantica. Morphological diversity of the two species was observed in linear, ratios, and areas measurements. The findings have implications for studying the population genetics, epidemiology, and control of the disease. PMID:25018891

Molecular and Morphological Characterization of Fasciola spp. Isolated from Different Host Species in a Newly Emerging Focus of Human Fascioliasis in Iran

Directory of Open Access Journals (Sweden)

Reza Shafiei

2014-01-01

Full Text Available The current study aimed to find out the morphometric and genotypic divergences of the flukes isolated from different hosts in a newly emerging focus of human fascioliasis in Iran. Adult Fasciola spp. were collected from 34 cattle, 13 sheep, and 11 goats from Kohgiluyeh and Boyer-Ahmad province, southwest of Iran. Genomic DNA was extracted from the flukes and PCR-RFLP was used to characterize the isolates. The ITS1, ITS2, and mitochondrial genes (mtDNA of NDI and COI from individual liver flukes were amplified and the amplicons were sequenced. Genetic variation within and between the species was evaluated by comparing the sequences. Moreover, morphometric characteristics of flukes were measured through a computer image analysis system. Based on RFLP profile, from the total of 58 isolates, 41 isolates (from cattle, sheep, and goat were identified as Fasciola hepatica, while 17 isolates from cattle were identified as Fasciola gigantica. Comparison of the ITS1 and ITS2 sequences showed six and seven single-base substitutions, resulting in segregation of the specimens into two different genotypes. The sequences of COI markers showed seven DNA polymorphic sites for F. hepatica and 35 DNA polymorphic sites for F. gigantica. Morphological diversity of the two species was observed in linear, ratios, and areas measurements. The findings have implications for studying the population genetics, epidemiology, and control of the disease.

Vécu des situations scolaires, estime de soi et Développement : du jugement moral a la période de la latence

Directory of Open Access Journals (Sweden)

Emile-Henri Riard

2011-06-01

Full Text Available Suivant une approche de psychologie sociale clinique, le point de vue adopté dans cet article est triple : 1- considérer les situations scolaires “ ordinaires ” comme potentiellement génératrices de difficultés; 2- s’inscrire en amont de l’adolescence afin d’améliorer la compréhension de cette dernière; 3 – considérer le vécu des élèves. La recherche menée en France (enfants de 6 à 11 ans, par questionnaire (48 situations relevant de la scolarité : classe, cour de récréation, trajet domicile/école et domicile ont été proposées ; test d’estime de soi (Coopersmith ; développement moral (Kohlberg. Variables : âge, sexe, mode d’habitat, position scolaire, classement, département. Les résultats (analyse de variance démontrent un fonctionnement “ en bloc ” du niveau de vécu de difficulté. Ressortent comme variables significatives, par ordre d’importance décroissante: le sexe (les garçons ressentent davantage les difficultés que les filles; l’âge (le niveau de difficulté vécue décroît avec l’âge mais concerne surtout la cour de récréation ; le mode d’habitat (collectif. La classe est l’espace le plus porteur de différences de vécu de difficultés indépendamment des variables. Le niveau d’autonomie et l’estime de soi sont schématiquement inversement proportionnés au niveau de difficulté vécu. La conclusion met l’accent sur l’importance des effets interactif et d’accumulation des situations.

Influence of Bipolar Pulse Poling Technique for Piezoelectric Vibration Energy Harvesters using Pb(Zr,Ti)O3 Films on 200 mm SOI Wafers

International Nuclear Information System (INIS)

Moriwaki, N; Fujimoto, K; Suzuki, K; Kobayashi, T; Itoh, T; Maeda, R; Suzuki, Y; Makimoto, N

2013-01-01

Piezoelectric vibration energy harvester arrays using Pb(Zr,Ti)O 3 thin films on 200 mm SOI wafers were fabricated. In-plane distribution of influence of bipolar pulse poling technique on direct current (DC) power output from the harvesters was investigated. The results indicate that combination poling treatment of DC and bipolar pulse poling increases a piezoelectric property and reduces a dielectric constant. It means that this poling technique improves the figure of merit of sensors and harvesters. Maximum DC power from a harvester treated by DC poling after bipolar pulse poling is about five times larger than a one treated by DC poling only

HYPERDIRE. HYPERgeometric functions DIfferential REduction. MATEMATICA based packages for differential reduction of generalized hypergeometric functions. FD and FS Horn-type hypergeometric functions of three variables

International Nuclear Information System (INIS)

Bytev, Vladimir V.; Kalmykov, Mikhail Yu.; Moch, Sven-Olaf; Hamburg Univ.

2013-12-01

HYPERDIRE is a project devoted to the creation of a set of Mathematica based programs for the differential reduction of hypergeometric functions. The current version includes two parts: the first one, FdFunction, for manipulations with Appell hypergeometric functions F D of r variables; and the second one, FsFunction, for manipulations with Lauricella-Saran hypergeometric functions F S of three variables. Both functions are related with one-loop Feynman diagrams.

Immunoparesis in newly diagnosed Multiple Myeloma patients

DEFF Research Database (Denmark)

Sorrig, Rasmus; Klausen, Tobias W.; Salomo, Morten

2017-01-01

Immunoparesis (hypogammaglobulinemia) is associated to an unfavorable prognosis in newly diagnosed Multiple myeloma (MM) patients. However, this finding has not been validated in an unselected population-based cohort. We analyzed 2558 newly diagnosed MM patients in the Danish Multiple Myeloma...

Molecular sensing using monolayer floating gate, fully depleted SOI MOSFET acting as an exponential transducer.

Science.gov (United States)

Takulapalli, Bharath R

2010-02-23

Field-effect transistor-based chemical sensors fall into two broad categories based on the principle of signal transduction-chemiresistor or Schottky-type devices and MOSFET or inversion-type devices. In this paper, we report a new inversion-type device concept-fully depleted exponentially coupled (FDEC) sensor, using molecular monolayer floating gate fully depleted silicon on insulator (SOI) MOSFET. Molecular binding at the chemical-sensitive surface lowers the threshold voltage of the device inversion channel due to a unique capacitive charge-coupling mechanism involving interface defect states, causing an exponential increase in the inversion channel current. This response of the device is in opposite direction when compared to typical MOSFET-type sensors, wherein inversion current decreases in a conventional n-channel sensor device upon addition of negative charge to the chemical-sensitive device surface. The new sensor architecture enables ultrahigh sensitivity along with extraordinary selectivity. We propose the new sensor concept with the aid of analytical equations and present results from our experiments in liquid phase and gas phase to demonstrate the new principle of signal transduction. We present data from numerical simulations to further support our theory.

Emerging tropical diseases in Australia. Part 5. Hendra virus

DEFF Research Database (Denmark)

Tulsiani, Suhella; Graham, G C; Moore, P R

2011-01-01

gene of the virus and the discovery that the virus had an exceptionally large genome subsequently led to HeV being assigned to a new genus, Henipavirus, along with Nipah virus (a newly emergent virus in pigs). The regular outbreaks of HeV-related disease that have occurred in Australia since 1994 have...

Emergence of visceral leishmaniasis in Sri Lanka: a newly established health threat.

Science.gov (United States)

Siriwardana, H V Y D; Karunanayake, P; Goonerathne, L; Karunaweera, N D

2017-09-01

Sri Lanka is a new focus of human cutaneous leishmaniasis caused by a genetic variant of usually visceralizing parasite Leishmania donovani. Over 3000 cases have been reported to our institution alone, during the past two decades. Recent emergence of visceral leishmaniasis is of concern. Patients suspected of having visceral leishmaniasis (n = 120) fulfilling at least two of six criteria (fever > 2 weeks, weight loss, tiredness affecting daily functions, splenomegaly, hepatomegaly and anemia) were studied using clinic-epidemiological, immunological and haematological parameters. Seven cases (four progressive, treated (group A) and 3 non- progressive, potentially asymptomatic and observed (group B) were identified. Clinical cases were treated with systemic sodium stibogluconate or amphotericin B and all were followed up at the leishmaniasis clinic of University of Colombo for 3 years with one case followed up for 9 years. All treated cases responded well to anti leishmanial treatment. Relapses were not noticed. Clinical features subsided in all non-progressive cases and did not develop suggestive clinical features or change of laboratory parameters. Visceral leishmaniasis cases have been originated from different districts within the country. Majority had a travel history to identified local foci of cutaneous leishmaniasis. Visceral leishmaniasis is recognized as an emerging health threat in Sri Lanka. At least a proportion of locally identified strains of L. donovani possess the ability to visceralize. Apparent anti leishmanial sensitivity is encouraging. Timely efforts in disease containment will be important in which accurate understanding of transmission characteristics, increased professional and community awareness, improved diagnostics and availability of appropriate treatment regimens.

Universal modeling of weak antilocalization corrections in quasi-two-dimensional electron systems using predetermined return orbitals

Science.gov (United States)

Sawada, A.; Koga, T.

2017-02-01

We have developed a method to calculate the weak localization and antilocalization corrections based on the real-space simulation, where we provide 147 885 predetermined return orbitals of quasi-two-dimensional electrons with up to 5000 scattering events that are repeatedly used. Our model subsumes that of Golub [L. E. Golub, Phys. Rev. B 71, 235310 (2005), 10.1103/PhysRevB.71.235310] when the Rashba spin-orbit interaction (SOI) is assumed. Our computation is very simple, fast, and versatile, where the numerical results, obtained all at once, cover wide ranges of the magnetic field under various one-electron interactions H' exactly. Thus, it has straightforward extensibility to incorporate interactions other than the Rashba SOI, such as the linear and cubic Dresselhaus SOIs, Zeeman effect, and even interactions relevant to the valley and pseudo spin degrees of freedom, which should provide a unique tool to study new classes of materials like emerging 2D materials. Using our computation, we also demonstrate the robustness of a persistent spin helix state against the cubic Dresselhaus SOI.

Generational differences among newly licensed registered nurses.

Science.gov (United States)

Keepnews, David M; Brewer, Carol S; Kovner, Christine T; Shin, Juh Hyun

2010-01-01

Responses of 2369 newly licensed registered nurses from 3 generational cohorts-Baby Boomers, Generation X, and Generation Y-were studied to identify differences in their characteristics, work-related experiences, and attitudes. These responses revealed significant differences among generations in: job satisfaction, organizational commitment, work motivation, work-to-family conflict, family-to-work conflict, distributive justice, promotional opportunities, supervisory support, mentor support, procedural justice, and perceptions of local job opportunities. Health organizations and their leaders need to anticipate intergenerational differences among newly licensed nurses and should provide for supportive working environments that recognize those differences. Orientation and residency programs for newly licensed nurses should be tailored to the varying needs of different generations. Future research should focus on evaluating the effectiveness of orientation and residency programs with regard to different generations so that these programs can be tailored to meet the varying needs of newly licensed nurses at the start of their careers. Copyright 2010 Mosby, Inc. All rights reserved.

Compliments, motivation et estime de soi : l'effet paradoxal de féliciter les capacités des enfants

DEFF Research Database (Denmark)

Hansen, Mikkel

2014-01-01

motivation may suffer when given feedback that evaluates their person. We discuss links between different types of feedback and children’s motivational frameworks, including their self-esteem. // RÉSUMÉ L’objectif de compliments tels que « T’es très fort, très intelligent » est d’encourager les enfants, mais...... des recherches récentes montrent que de telles propositions en feedback peuvent dissuader les enfants de s’engager dans des tâches difficiles, réduisant ainsi leurs apprentissages. Nous exposerons les travaux de Dweck (e.g., 2000) qui démontrent comment les compliments centrés sur l’évaluation de la...... personne influent négativement sur la motivation intrinsèque du sujet. Nous discuterons des liens existant entre différents types de feedback et les cadres motivationnels où évoluent les enfants, ainsi que de leur estime de soi....

The effect of experience on the hunting success of newly emerged spiderlings.

Science.gov (United States)

Morse

2000-12-01

Initial interactions with prey may affect a predator's subsequent foraging success. With experience, second-instar Misumena vatia spiderlings (Thomisidae) that had recently emerged from their egg sacs oriented faster to fruit flies (Drosophila melanogaster) than näive individuals. Orientation time of these spiderlings decreased rapidly for the first two to three runs (every third day) in a simple laboratory setting, and then remained low and relatively constant. Time to capture a fly also declined initially, but subsequently became extremely variable, increasing prior to moult. Increase in capture time and the failure to capture prey appeared associated with impending moult, rather than satiation. Spiderlings oriented to prey more rapidly at the beginning of the third instar than at the start of the second instar, suggesting that experience still enhanced performance after a moult cycle. Overall capture times at the beginning of the third instar decreased from those at the end of the second instar, but did not differ significantly from the beginning of the second instar, although spiderlings gaining the most biomass had the shortest mean capture times. In a second experiment, time to orient and time to capture prey did not differ in näive, second-instar siblings run 1 and 3 days after emergence from their egg sacs. However, 3-day individuals that had captured prey each day (confiscated before they could feed) oriented faster than näive 3-day-old siblings, but did not differ in the time taken to capture prey. Experience, rather than age or energetic condition, best explains these changes in performance. Copyright 2000 The Association for the Study of Animal Behaviour.

Building Food Democracy: Exploring Civic Food Networks and Newly Emerging Forms of Food Citizenship

NARCIS (Netherlands)

Renting, H.; Schermer, M.; Rossi, A.

2012-01-01

In recent years new types of consumer-producer cooperation in food networks have emerged in which consumers play an active role in the operation and thereby clearly go beyond food provisioning as such. Examples include consumer co-ops and solidarity buying groups of local and organic food,

Ulipristal acetate: a new emergency contraceptive.

Science.gov (United States)

Sullivan, Jade L; Bulloch, Marilyn N

2011-07-01

Ulipristal acetate (UPA) is a newly developed emergency contraceptive currently available in the USA and Europe. It is approved as a 30 mg one-time dose taken within 120 h (5 days) of unprotected intercourse or failed contraception. This selective progesterone receptor modulator appears to be more effective than the levonorgestrel-containing emergency contraceptive, which must be taken within 72 h of unprotected intercourse. According to pharmacodynamic trials, UPA delays follicular maturation and ovulation. In addition, UPA may modulate the endometrium. Both Phase III clinical trials found that UPA does not lose efficacy within the 120-h dosing interval. Throughout all phases of clinical studies, UPA was shown to be well tolerated with only minimal adverse drug reactions, all of which are similar to competitor therapies.

Photographie et représentation de soi dans W ou le Souvenir d’enfance de Georges Perec

Directory of Open Access Journals (Sweden)

Siriki Ouattara

2014-04-01

Full Text Available W ou le souvenir d’enfance convoque ouvertement en son sein des éléments paralittéraires comme la photographie qui le déconstruit. Le désir de Georges Perec de reconstituer ou de reconstruire son histoire est si ardent qu’il lui a consacré ce roman particulier. Dans cette œuvre autobiographique atypique, l’auteur fait appel à diverses techniques de représentation de soi, la photographie. Cette dernière est un élément nouveau en littérature (même s´elle y est prise en compte depuis le dix-neuvième siècle qui redéfinit nombre d´habitudes littéraires. Ainsi, elle occasionne un renouvellement de l´écriture à travers l´institution de nouveaux rapports qui, tout en changeant les vieux rôles narratifs, invitent à dire autrement, voire à raconter différemment. La photographie offre alors l´occasion d´expérimenter une nouvelle discursivité de la représentation.

From iTE to NQT: Evaluating Newly Qualified Teachers' Use of Mobile Technology in Their First Two Years of Teaching

Science.gov (United States)

Mac Mahon, Brendan; Ó'Grádaigh, Seán; Ghuidhir, Sinéad Ni

2018-01-01

This article outlines a study to examine if newly qualified teachers (NQTs) who had incorporated iPad within pedagogical practice during initial teacher education, continued to do so in their first two years of teaching, and also to identify the challenges to integration that emerged. Findings show that use of iPad in teaching, learning and…

Establishment probability in newly founded populations

Directory of Open Access Journals (Sweden)

Gusset Markus

2012-06-01

Full Text Available Abstract Background Establishment success in newly founded populations relies on reaching the established phase, which is defined by characteristic fluctuations of the population’s state variables. Stochastic population models can be used to quantify the establishment probability of newly founded populations; however, so far no simple but robust method for doing so existed. To determine a critical initial number of individuals that need to be released to reach the established phase, we used a novel application of the “Wissel plot”, where –ln(1 – P0(t is plotted against time t. This plot is based on the equation P0t=1–c1e–ω1t, which relates the probability of extinction by time t, P0(t, to two constants: c1 describes the probability of a newly founded population to reach the established phase, whereas ω1 describes the population’s probability of extinction per short time interval once established. Results For illustration, we applied the method to a previously developed stochastic population model of the endangered African wild dog (Lycaon pictus. A newly founded population reaches the established phase if the intercept of the (extrapolated linear parts of the “Wissel plot” with the y-axis, which is –ln(c1, is negative. For wild dogs in our model, this is the case if a critical initial number of four packs, consisting of eight individuals each, are released. Conclusions The method we present to quantify the establishment probability of newly founded populations is generic and inferences thus are transferable to other systems across the field of conservation biology. In contrast to other methods, our approach disaggregates the components of a population’s viability by distinguishing establishment from persistence.

Forum on Emerging Infectious Diseases Highlights Leading-Edge Research | Poster

Science.gov (United States)

Scientists and professionals from multiple governmental agencies recently gathered at NCI at Frederick for a forum on newly emerging infectious diseases, threats to public health, and ongoing efforts to study high-risk pathogens. During the one-day event, which was sponsored by the National Interagency Confederation for Biological Research’s Scientific Interaction

Readout ASIC of pair-monitor for international linear collider

International Nuclear Information System (INIS)

Sato, Yutaro; Ikeda, Hirokazu; Ito, Kazutoshi; Miyamoto, Akiya; Nagamine, Tadashi; Sasaki, Rei; Takubo, Yosuke; Tauchi, Toshiaki; Yamamoto, Hitoshi

2010-01-01

The pair-monitor is a beam profile monitor at the interaction point of the international linear collider. A prototype of the readout ASIC for the pair-monitor has been designed and tested. Since the pair-monitor uses the hit distribution of electrons and positrons generated by the beam-crossing to measure the beam profile, the readout ASIC is designed to count the number of hits. In a prototype ASIC, 36 readout cells were implemented by TSMC 0.25-μm CMOS process. Each readout cell is equipped with an amplifier, comparator, 8-bit counter and 16 count-registers. By the operation test, all the ASIC component were confirmed to work correctly. As the next step, we develop the prototype ASIC with the silicon on insulator technology. It is produced with OKI 0.2-μm FD-SOI CMOS process.

Validation of the Large Interface Method of NEPTUNE{sub C}FD 1.0.8 for Pressurized Thermal Shock (PTS) applications

Energy Technology Data Exchange (ETDEWEB)

Coste, P., E-mail: pierre.coste@cea.fr [CEA, DEN, DER/SSTH, F-38054 Grenoble (France); Lavieville, J. [Electricite de France, Chatou (France); Pouvreau, J. [CEA, DEN, DER/SSTH, F-38054 Grenoble (France); Baudry, C.; Guingo, M.; Douce, A. [Electricite de France, Chatou (France)

2012-12-15

Highlights: Black-Right-Pointing-Pointer The two-phase Pressurized Thermal Shock (PTS) is a key thermohydraulics issue for PWR safety. Black-Right-Pointing-Pointer The dynamic and condensation models are firstly validated separately. Black-Right-Pointing-Pointer Then the global validation is done with the COSI experiment. Black-Right-Pointing-Pointer All the calculations performed with the same set of models both in the Large Interface Method and in the k-{epsilon} approach for turbulence substantiate the application of the tool to PTS. - Abstract: NEPTUNE{sub C}FD is a code based on a 3D transient Eulerian two-fluid model. One of the main application targets is the two-phase Pressurized Thermal Shock (PTS), which is related to PWR Reactor Pressure Vessel (RPV) lifetime safety studies, when sub-cooled water from Emergency Core Cooling (ECC) system is injected into the possibly uncovered cold leg and penetrates into the RPV downcomer. Five experiments were selected for the validation, a selection reviewed by a panel of European experts. The dynamic models are validated with a co-current smooth and wavy air-water stratified flow in a rectangular channel with detailed measurements of turbulence and velocities. The condensation models are validated with a co-current smooth and wavy steam-water stratified flow in a rectangular channel with measurements of the steam flow rates. The dynamic models are validated in the situation of a jet impinging a pool free surface with two experiments dealing with a water jet impingement on a water pool free surface in air environment. Finally, all the models involved in the reactor conditions are validated with the COSI experiment. The calculations are done with the same set of Large Interface Method models and a RANS (k-{epsilon}) approach for turbulence. They substantiate the application of the tool to PTS studies.

Nuclear emergency preparedness and management the international nuclear emergency exercise Inex 2000

International Nuclear Information System (INIS)

Mundigl, St.

2003-01-01

With the initiation of the first international nuclear emergency exercise INEX 1, performed as a table-top exercise in 1993, the international community tested, for the first time, approaches and policies in place to manage a nuclear or radiological emergency. INEX 1 with its related workshops led to a wealth of lessons learned and to an improvement in nuclear emergency management. The INEX 2 exercise series, initiated by the NEA and performed between 1996 and 1999, established an international nuclear emergency 'exercise culture' leading to a clear improvement of the international aspects of nuclear emergency preparedness and management. INEX 2 was a series of four command post exercises based on national nuclear emergency exercises in Switzerland, Finland, Hungary and Canada. Simulated accidents at nuclear power plants were used to test existing procedures in emergency response and management, and to analyse local, regional, national and international emergency plans under realistic conditions. In addition, the exercises allowed the participating countries to gain experience using new concepts and tools. The most significant result of INEX 2 and a major step forward in nuclear emergency management was the development of a new communication and information exchange strategy, which is currently implemented by various NEA member countries as well as by the international community in general. The objective of this new strategy is to assist the decision-maker by improving the selection of the data transmitted, by encouraging the transmission and reception of such data and information using modern communication methods, e.g. secure world wide web technologies, and by defining emergency monitoring and modelling needs. To test the validity and usefulness of the newly-developed strategy, the NEA proposed to organize an international nuclear emergency exercise, INEX 2000, similar in scope to the INEX 2 exercises. In addition, the NEA suggested to include, for the first

Emerging Evidence for Platelets as Immune and Inflammatory Effector Cells

Directory of Open Access Journals (Sweden)

Matthew Thomas Rondina

2014-12-01

Full Text Available While traditionally recognized for their roles in hemostatic pathways, emerging evidence demonstrates that platelets have previously unrecognized, dynamic roles that span the immune continuum. These newly-recognized platelet functions, including the secretion of immune mediators, interactions with endothelial cells, monocytes, and neutrophils, toll-like receptor (TLR mediated responses, and induction of neutrophil extracellular trap (NET formation, bridge thrombotic and inflammatory pathways and contribute to host defense mechanisms against invading pathogens. In this focused review, we highlight several of these emerging aspects of platelet biology and their implications in clinical infectious syndromes.

The emergence of shared leadership in newly-formed teams with an initial structure of vertical leadership: A longitudinal analysis

OpenAIRE

Fransen, Katrien; Delvaux, Ellen; Mesquita, Batja; Van Puyenbroeck, Stef

2018-01-01

The importance of high-quality leadership for team effectiveness is widely recognized, with recent viewpoints arguing shared leadership to be a more powerful predictor than vertical leadership. To identify changes in leadership structures over time, we longitudinally tracked the leadership structure of 27 newly-formed teams (N = 195), all having an initial structure of vertical leadership. Our findings demonstrated that the average team leadership strengthened over the course of the 24-week p...

Experimental verification of temperature coefficients of resistance for uniformly doped P-type resistors in SOI

Science.gov (United States)

Olszacki, M.; Maj, C.; Bahri, M. Al; Marrot, J.-C.; Boukabache, A.; Pons, P.; Napieralski, A.

2010-06-01

Many today's microsystems like strain-gauge-based piezoresistive pressure sensors contain doped resistors. If one wants to predict correctly the temperature impact on the performance of such devices, the accurate data about the temperature coefficients of resistance (TCR) are essential. Although such data may be calculated using one of the existing mobility models, our experiments showed that we can observe the huge mismatch between the calculated and measured values. Thus, in order to investigate the TCR values, a set of the test structures that contained doped P-type resistors was fabricated. As the TCR value also depends on the doping profile shape, we decided to use the very thin, 340 nm thick SOI wafers in order to fabricate the quasi-uniformly doped silicon layers ranging from 2 × 1017 at cm-3 to 1.6 × 1019 at cm-3. The results showed that the experimental data for the first-order TCR are quite far from the calculated ones especially over the doping range of 1018-1019 at cm-3 and quite close to the experimental ones obtained by Bullis about 50 years ago for bulk silicon. Moreover, for the first time, second-order coefficients that were not very consistent with the calculations were obtained.

Experimental verification of temperature coefficients of resistance for uniformly doped P-type resistors in SOI

International Nuclear Information System (INIS)

Olszacki, M; Maj, C; Al Bahri, M; Marrot, J-C; Boukabache, A; Pons, P; Napieralski, A

2010-01-01

Many today's microsystems like strain-gauge-based piezoresistive pressure sensors contain doped resistors. If one wants to predict correctly the temperature impact on the performance of such devices, the accurate data about the temperature coefficients of resistance (TCR) are essential. Although such data may be calculated using one of the existing mobility models, our experiments showed that we can observe the huge mismatch between the calculated and measured values. Thus, in order to investigate the TCR values, a set of the test structures that contained doped P-type resistors was fabricated. As the TCR value also depends on the doping profile shape, we decided to use the very thin, 340 nm thick SOI wafers in order to fabricate the quasi-uniformly doped silicon layers ranging from 2 × 10 17 at cm −3 to 1.6 × 10 19 at cm −3 . The results showed that the experimental data for the first-order TCR are quite far from the calculated ones especially over the doping range of 10 18 –10 19 at cm −3 and quite close to the experimental ones obtained by Bullis about 50 years ago for bulk silicon. Moreover, for the first time, second-order coefficients that were not very consistent with the calculations were obtained.

Polymorphism of a lipid extract from Pseudomonas fluorescens: Structure analysis of a hexagonal phase and of a novel cubic phase of extinction symbol Fd--

International Nuclear Information System (INIS)

Mariani, P.; Rivas, E.; Delacroix, H.; Luzzati, V.

1990-01-01

The phase diagram of the Pseudomonas fluorescens lipid extract is unusual, in the sense that it displays a cubic phase straddled by a hexagonal phase. The hexagonal phase was studied over an extended concentration range, and the reflections were phased on the assumption that the structure contains circular cylinders of known radius. The cubic phase, whose extinction symbol is Fd--, was analyzed by reference to space group No. 227 (Fd3m). The phases of the reflections were determined by using a novel pattern recognition approach, based upon the notion that the average fourth power of the electron density contrast 4 > is dependent on chemical composition but not on physical structure, provided that the function Δr(r) satisfies the constraints = 0 and 2 > = 1. The authors analyzed two cubic samples of different composition: for each of them they generated all the phase combinations compatible with the X-ray scattering data and they searched for those whose 4 > best agrees with the hexagonal phase. They concluded that the chemical composition of the phases being compared must be identical, that the X-ray scattering data should not be truncated artificially, and that the apodization must be mild so that the curvature takes a value intermediate between those corresponding to the raw data of the two phases. The structure may be visualized as a 3D generalization of the lipid monolayer. The structure, moreover, does not belong to the class of the infinite periodic surfaces without intersections

SU-E-T-571: Newly Emerging Integrated Transmission Detector Systems Provide Online Quality Assurance of External Beam Radiation Therapy

International Nuclear Information System (INIS)

Hoffman, D; Chung, E; Hess, C; Stern, R; Benedict, S

2015-01-01

Purpose: Two newly emerging transmission detectors positioned upstream from the patient have been evaluated for online quality assurance of external beam radiotherapy. The prototype for the Integral Quality Monitor (IQM), developed by iRT Systems GmbH (Koblenz, Germany) is a large-area ion chamber mounted on the linac accessory tray to monitor photon fluence, energy, beam shape, and gantry position during treatment. The ion chamber utilizes a thickness gradient which records variable response dependent on beam position. The prototype of Delta4 Discover™, developed by ScandiDos (Uppsala, Sweden) is a linac accessory tray mounted 4040 diode array that measures photon fluence during patient treatment. Both systems are employable for patient specific QA prior to treatment delivery. Methods: Our institution evaluated the reproducibility of measurements using various beam types, including VMAT treatment plans with both the IQM ion chamber and the Delta4 Discover diode array. Additionally, the IQM’s effect on photon fluence, dose response, simulated beam error detection, and the accuracy of the integrated barometer, thermometer, and inclinometer were characterized. The evaluated photon beam errors are based on the annual tolerances specified in AAPM TG-142. Results: Repeated VMAT treatments were measured with 0.16% reproducibility by the IQM and 0.55% reproducibility by the Delta4 Discover. The IQM attenuated 6, 10, and 15 MV photon beams by 5.43±0.02%, 4.60±0.02%, and 4.21±0.03% respectively. Photon beam profiles were affected <1.5% in the non-penumbra regions. The IQM’s ion chamber’s dose response was linear and the thermometer, barometer, and inclinometer agreed with other calibrated devices. The device detected variations in monitor units delivered (1%), field position (3mm), single MLC leaf positions (13mm), and photon energy. Conclusion: We have characterized two new transmissions detector systems designed to provide in-vivo like measurements upstream

SU-E-T-571: Newly Emerging Integrated Transmission Detector Systems Provide Online Quality Assurance of External Beam Radiation Therapy

Energy Technology Data Exchange (ETDEWEB)

Hoffman, D; Chung, E; Hess, C; Stern, R; Benedict, S [UC Davis Cancer Center, Sacramento, CA (United States)

2015-06-15

Purpose: Two newly emerging transmission detectors positioned upstream from the patient have been evaluated for online quality assurance of external beam radiotherapy. The prototype for the Integral Quality Monitor (IQM), developed by iRT Systems GmbH (Koblenz, Germany) is a large-area ion chamber mounted on the linac accessory tray to monitor photon fluence, energy, beam shape, and gantry position during treatment. The ion chamber utilizes a thickness gradient which records variable response dependent on beam position. The prototype of Delta4 Discover™, developed by ScandiDos (Uppsala, Sweden) is a linac accessory tray mounted 4040 diode array that measures photon fluence during patient treatment. Both systems are employable for patient specific QA prior to treatment delivery. Methods: Our institution evaluated the reproducibility of measurements using various beam types, including VMAT treatment plans with both the IQM ion chamber and the Delta4 Discover diode array. Additionally, the IQM’s effect on photon fluence, dose response, simulated beam error detection, and the accuracy of the integrated barometer, thermometer, and inclinometer were characterized. The evaluated photon beam errors are based on the annual tolerances specified in AAPM TG-142. Results: Repeated VMAT treatments were measured with 0.16% reproducibility by the IQM and 0.55% reproducibility by the Delta4 Discover. The IQM attenuated 6, 10, and 15 MV photon beams by 5.43±0.02%, 4.60±0.02%, and 4.21±0.03% respectively. Photon beam profiles were affected <1.5% in the non-penumbra regions. The IQM’s ion chamber’s dose response was linear and the thermometer, barometer, and inclinometer agreed with other calibrated devices. The device detected variations in monitor units delivered (1%), field position (3mm), single MLC leaf positions (13mm), and photon energy. Conclusion: We have characterized two new transmissions detector systems designed to provide in-vivo like measurements upstream

Total dose behavior of partially depleted SOI dynamic threshold voltage MOS (DTMOS) for very low supply voltage applications (0.6 - 1 V)

International Nuclear Information System (INIS)

Ferlet-Cavrois, V.; Musseau, O.; Leray, J.L.; Faynot, O.; Raynaud, C.; Pelloie, J.L.

1999-01-01

In this paper, we presented two DTMOS architectures processed with a partially depleted SOI technology. The first architecture, DTMOS without limiting transistor, is dedicated to ultra-low voltage applications, at 0.6 V. For 1V applications, the second architecture, DTMOS with limiting transistor, needs an additional transistor to limit the body-source diode current. The total dose irradiation of both DTMOS architectures induces no change of the drain current, but an increase of the body-source diode current. Total dose induced trapped charge in the buried oxide increases the body potential of the DTMOS transistor. It induces an increase of the current flow at the back interface of the silicon film. Irradiation of complex circuits using DTMOS transistors would lead to a degradation of the stand-by consumption. (authors)

Effects of land use on taxonomic and functional diversity

DEFF Research Database (Denmark)

Hevia, Violeta; Carmona, Carlos P.; Azcárate, Francisco M.

2016-01-01

Land-use change is the major driver of biodiversity loss. However, taxonomic diversity (TD) and functional diversity (FD) might respond differently to land-use change, and this response might also vary depending on the biotic group being analysed. In this study, we compare the TD and FD of four......: the sampling unit scale and the site scale. Land-use intensity effects on TD and FD were quite different and highly varied among the four biotic groups, with no single clear pattern emerging that could be considered general for all organisms. Additive partitioning of species diversity revealed clear...... contrasting patterns between TD and FD in the percentage of variability observed at each spatial scale. While most variability in TD was found at the larger scales, irregardless of organism group and land-use type, most variability in FD was found at the smallest scale, indicating that species turnover among...

Seismic modeling with radial basis function-generated finite differences (RBF-FD) – a simplified treatment of interfaces

Energy Technology Data Exchange (ETDEWEB)

Martin, Bradley, E-mail: brma7253@colorado.edu; Fornberg, Bengt, E-mail: Fornberg@colorado.edu

2017-04-15

In a previous study of seismic modeling with radial basis function-generated finite differences (RBF-FD), we outlined a numerical method for solving 2-D wave equations in domains with material interfaces between different regions. The method was applicable on a mesh-free set of data nodes. It included all information about interfaces within the weights of the stencils (allowing the use of traditional time integrators), and was shown to solve problems of the 2-D elastic wave equation to 3rd-order accuracy. In the present paper, we discuss a refinement of that method that makes it simpler to implement. It can also improve accuracy for the case of smoothly-variable model parameter values near interfaces. We give several test cases that demonstrate the method solving 2-D elastic wave equation problems to 4th-order accuracy, even in the presence of smoothly-curved interfaces with jump discontinuities in the model parameters.

Dynamic changes of photorecrptor layer in eyes with acute central serous chorioretinopathy after laser treatment by fourier-domain optical coherence tomography%应用 FD-OCT 动态观察急性 CSCR激光后光感受器层的变化

Institute of Scientific and Technical Information of China (English)

周丽琴; 王毅; 王晟; 孔琛柯

2014-01-01

AIM:To dynamically observe the feeling change of the photorecrptor layer in the eyes with acute central serous chorioretinopathy ( CSCR ) krypton laser treatment by fourier- domain optical coherence tomography ( FD -OCT ), and to study their correlation with the chang of vision. METHODS: This is a retrospective case series study. The clinical diagnosis of 52 patients with monocular initial onset of central serous chorioretinopathy, krypton laser photocoagulation before treatment, after 1,2,4,6,8wk,6mo, FD - OCT were performed to observe the morphological changes characteristic of photoreceptor layer and changes in vision. RESULTS: After 1wk treatment, all cases were improved;2wk,6 cases were cured;4wk,38 cases were cured;6wk,41 cases were cured;8wk,45 cases were cured, the OCT showed macular retinal neuroepithelial layer ( RNL ) from fully absorbed;6mo with the same 8wk. Before and after treatment in patients with best corrected visual acuity and from the height difference between the macular region of RNL was statistically significant (P CONCLUSION:FD-OCT can dynamicaly observed acute central serous chorioretinopathy krypton laser treatment of photoreceptor ultrastruture changes. Photoreceptor layer of complete and incomplete best corrected visual acuity difference was statistically significant (P METHODS: This is a retrospective case series study. The clinical diagnosis of 52 patients with monocular initial onset of central serous chorioretinopathy, krypton laser photocoagulation before treatment, after 1, 2, 4, 6, 8wk, 6mo, FD - OCT were performed to observe the morphological changes characteristic of photoreceptor layer and changes in vision. RESULTS: After 1wk treatment, all cases were improved; 2wk, 6 cases were cured; 4wk, 38 cases were cured; 6wk, 41 cases were cured; 8wk, 45 cases were cured, the OCT showed macular retinal neuroepithelial layer ( RNL ) from fully absorbed; 6mo with the same 8wk. Before and after treatment in patients with best corrected

Une affaire de générations : la construction d’un entre-soi à l’épreuve de la mixité intergénérationnelle.

Directory of Open Access Journals (Sweden)

François Madoré

2010-06-01

Full Text Available Depuis les années 2000 en France, un nouveau type d’environnement résidentiel sécurisé (et souvent fermé mais pas de façon systématique se développe, incarné par les multiples figures du village senior. Ce phénomène soulève l’hypothèse d’une transposition d’un modèle d’entre-soi générationnel des États-Unis, où, dès les années 1950, des retirement communities ou active adults communities sont apparues, qui ont depuis proliféré vers la France. Il pose aussi la question de la construction d’un entre-soi et de sa confrontation à la mixité mais aussi à l’altérité. C’est cette interrogation qui sous-tend cet article. Celui-ci observe les modes d’habiter dans une résidence construite à l’origine exclusivement pour les seniors mais ouverte depuis à des ménages plus jeunes pour combattre la vacance d’une partie des logements. Il s’agit de la Villa Vermeil de Biscarrosse (Landes, complexe résidentiel fermé avec contrôle des accès, composé d’une résidence locative de 108 maisons gérée par le groupe Omnium Finance. Des entretiens longs et semi-directifs ont été conduits en 2008 auprès de résidants de cet ensemble d’habitat et du gestionnaire du club Villa Vermeil. Cette méthode permet de faire émerger les discours d’existence, donnant accès aux images et aux représentations des habitants dans la construction de leur rapport à l’habiter. L’intérêt de cette approche monographique est de bien illustrer la façon dont peut se construire ou non l’entre-soi générationnel et le rapport aux autres classes d’âge, dans un contexte où la mixité intergénérationnelle, étrangère à la conception du projet, a été imposée « après coup », ce qui n’est pas toujours bien perçu par les seniors, loin s’en faut, certains vivant cette mixité imposée comme une trahison et en décalage avec ce qu’ils étaient venus chercher en s’installant dans ce lieu. Since the

Modeling of the Channel Thickness Influence on Electrical Characteristics and Series Resistance in Gate-Recessed Nanoscale SOI MOSFETs

Directory of Open Access Journals (Sweden)

A. Karsenty

2013-01-01

Full Text Available Ultrathin body (UTB and nanoscale body (NSB SOI-MOSFET devices, sharing a similar W/L but with a channel thickness of 46 nm and lower than 5 nm, respectively, were fabricated using a selective “gate-recessed” process on the same silicon wafer. Their current-voltage characteristics measured at room temperature were found to be surprisingly different by several orders of magnitude. We analyzed this result by considering the severe mobility degradation and the influence of a huge series resistance and found that the last one seems more coherent. Then the electrical characteristics of the NSB can be analytically derived by integrating a gate voltage-dependent drain source series resistance. In this paper, the influence of the channel thickness on the series resistance is reported for the first time. This influence is integrated to the analytical model in order to describe the trends of the saturation current with the channel thickness. This modeling approach may be useful to interpret anomalous electrical behavior of other nanodevices in which series resistance and/or mobility degradation is of a great concern.

Using spatiotemporal models and distance sampling to map the space use and abundance of newly metamorphosed Western Toads (Anaxyrus boreas)

Science.gov (United States)

Chelgren, Nathan D.; Samora, Barbara; Adams, Michael J.; McCreary, Brome

2011-01-01

High variability in abundance, cryptic coloration, and small body size of newly metamorphosed anurans have limited demographic studies of this life-history stage. We used line-transect distance sampling and Bayesian methods to estimate the abundance and spatial distribution of newly metamorphosed Western Toads (Anaxyrus boreas) in terrestrial habitat surrounding a montane lake in central Washington, USA. We completed 154 line-transect surveys from the commencement of metamorphosis (15 September 2009) to the date of first snow accumulation in fall (1 October 2009), and located 543 newly metamorphosed toads. After accounting for variable detection probability associated with the extent of barren habitats, estimates of total surface abundance ranged from a posterior median of 3,880 (95% credible intervals from 2,235 to 12,600) in the first week of sampling to 12,150 (5,543 to 51,670) during the second week of sampling. Numbers of newly metamorphosed toads dropped quickly with increasing distance from the lakeshore in a pattern that differed over the three weeks of the study and contradicted our original hypotheses. Though we hypothesized that the spatial distribution of toads would initially be concentrated near the lake shore and then spread outward from the lake over time, we observed the opposite. Ninety-five percent of individuals occurred within 20, 16, and 15 m of shore during weeks one, two, and three respectively, probably reflecting continued emergence of newly metamorphosed toads from the lake and mortality or burrow use of dispersed individuals. Numbers of toads were highest near the inlet stream of the lake. Distance sampling may provide a useful method for estimating the surface abundance of newly metamorphosed toads and relating their space use to landscape variables despite uncertain and variable probability of detection. We discuss means of improving the precision of estimates of total abundance.

Sample preparation and UHPLC-FD analysis of pteridines in human urine.

Science.gov (United States)

Tomšíková, H; Solich, P; Nováková, L

2014-07-01

Elevated levels of pteridines can indicate the activation of cellular immune system by certain diseases. No work dealing with the simultaneous determination of urinary neopterin, biopterin and their reduced forms has been published. Therefore, a new SPE-UHPLC-FD method for the analysis of these compounds has been developed. The main emphasis was put on the stability of dihydroforms during the sample processing and storage. As a stabilizing agent, dithiothreitol, at various concentrations, and various pH values (3.8-9.8) of working solutions were tested. Chromatographic separation was performed under HILIC isocratic conditions on BEH Amide column. The method was linear for the calibration standard solutions in the range of 10-10,000 ng/ml (dihydroforms) and 0.5-1000 ng/ml (oxidized forms), and for real samples in the range of 25-1000 ng/ml (dihydroforms) and 1-100 ng/ml (oxidized forms). The development of a new SPE sample preparation method was carried out on different types of sorbents (based on a mixed-mode cation exchange, porous graphitic carbon and a polymer comprising hydrophilic and hydrophobic components). Final validation was performed on a MCAX SPE column. Method accuracy ranged from 76.9 to 121.9%. The intra- and inter-day precision did not exceed 10.7%. The method provided high sensitivity for the use in routine clinical measurements of urine (LLOQ 1 ng/ml for oxidized forms and 25 ng/ml for dihydroforms). Average concentrations of biopterin, neopterin, and dihydrobiopterin found in urine of healthy persons were related to the mol of creatinine (66.8, 142.3, and 257.3 μmol/mol of creatinine, respectively) which corresponded to the literature data. The concentration of dihydroneopterin obtained using our method was 98.8 μmol/mol of creatinine. Copyright © 2014 Elsevier B.V. All rights reserved.

Design and fabrication process of silicon micro-calorimeters on simple SOI technology for X-ray spectral imaging

International Nuclear Information System (INIS)

Aliane, A.; Agnese, P.; Pigot, C.; Sauvageot, J.-L.; Moro, F. de; Ribot, H.; Gasse, A.; Szeflinski, V.; Gobil, Y.

2008-01-01

Several successful development programs have been conducted on infra-red bolometer arrays at the 'Commissariat a l'Energie Atomique' (CEA-LETI Grenoble) in collaboration with the CEA-SAp (Saclay); taking advantage of this background, we are now developing an X-ray spectro-imaging camera for next generation space astronomy missions, using silicon only technology. We have developed monolithic silicon micro-calorimeters based on implanted thermistors in an improved array that could be used for future space missions. The 8x8 array consists of a grid of 64 suspended pixels fabricated on a silicon on insulator (SOI) wafer. Each pixel of this detector array is made of a tantalum (Ta) absorber, which is bound by means of indium bump hybridization, to a silicon thermistor. The absorber array is bound to the thermistor array in a collective process. The fabrication process of our detector involves a combination of standard technologies and silicon bulk micro-machining techniques, based on deposition, photolithography and plasma etching steps. Finally, we present the results of measurements performed on these four primary building blocks that are required to create a detector array up to 32x32 pixels in size

Synthesis of Fe3O4 poly(styrene-glycidyl methacrylate) magnetic porous microspheres and application in the immobilization of Klebsiella sp. FD-3 to reduce Fe(III)EDTA in a NO(x) scrubbing solution.

Science.gov (United States)

Wang, Xiaoyan; Zhou, Zuoming; Jing, Guohua

2013-02-01

Magnetic poly(styrene-glycidyl methacrylate) porous microspheres (MPPM) with high magnetic contents were prepared by surfactant reverse micelles and emulsion polymerization of monomers, in which the well-dispersed Fe(3)O(4) nanoparticles were modified by polyethylene glycol (PEG) and oleic acid (OA) respectively. The characterizations showed that both of the OA-MPPM and the PEG-MPPM were ferromagnetic, however, the OA-MPPM was used to immobilize the bacteria for more advantages. Therefore, the effects of monomer ratio, surfactant, crosslinker and amount of Fe(3)O(4) on the structure, morphology and magnetic contents of the OA-MPPM were investigated. Then, the OA-MPPM was utilized to immobilize Klebsiella sp. FD-3, an iron-reducing bacterium for Fe(III)EDTA reduction applied in NO(x) removal. Compared with free bacteria, the immobilized FD-3 showed a better tolerance to the unbeneficial pH and temperature conditions. Copyright © 2012 Elsevier Ltd. All rights reserved.

Lithium-Rich Nanoscale Li _1.2 Mn _0.54 Ni _0.13 Co _0.13 O ₂ Cathode Material Prepared by Co-Precipitation Combined Freeze Drying (CP-FD) for Lithium-Ion Batteries

Energy Technology Data Exchange (ETDEWEB)

Bai, Ying; Li, Yu; Wu, Chuan; Lu, Jun; Li, Hui; Liu, Zhaolin; Zhong, Yunxia; Chen, Shi; Zhang, Cunzhong; Amine, Khalil; Wu, Feng

2015-07-14

Nanoscale Li-rich Li1.2Mn0.54Ni0.13Co0.13O2 material is synthesized by a co-precipitation combined freeze drying (CP-FD) method, and compared with a conventional co-precipitation method combined vacuum drying (CP-VD). With the combination of X-ray diffraction (XRD) and scanning electron microscopy (SEM), it is found that the sample from CP-FD method consists of a pure phase with good crystallinity and small, homogenous particles (100-300 nm) with uniform particle size distribution. Inductively coupled plasma spectroscopy (ICP) shows that the sample has a stoichiometric ratio of n((Li)): n((Mn)): n((Ni)): n((Co))=9: 4: 1: 1; and its Brunauer-Emmett-Teller (BET) specific surface area is 5.749 m(2)g(-1). This sample achieves excellent electrochemical properties: its initial discharge capacities are 298.9 mAhg(-1) at 0.1C (20 mAg(-1)), 246.1 mAhg(-1) at 0.5C, 215.8 mAhg(-1) at 1C, and 154.2 mAhg(-1) at 5C (5C charge and 5C discharge), as well as good cycling performance. In addition, the Li+ chemical diffusion coefficient of Li1.2Mn0.54Ni0.13Co0.13O2 material prepared by the CP-FD method is 4.59 x 10(-11) cm(2) s(-1), which is higher than that of the Li1.2Mn0.54Ni0.13Co0.13O2 material prepared by CP-VD. This phenomenon illustrates the potential for Li1.2Mn0.54Ni0.13Co0.13O2 with good rate performance synthesized by CP-FD method.

Newly emerging opportunity for pollution reduction using hydrogen as vehicular fuel

International Nuclear Information System (INIS)

Krepec, T.; Hong, H.

1998-01-01

There is a new important development in automotive technology in recent years which is aimed towards more efficient and less polluting vehicles. This is one of the goals of the Partnership for a New Generation of Vehicles (PNGV) launched in 1993 by the USA Government in cooperation with the three big auto makers Chrysler, Ford and General Motors. The objective is to achieve 80 miles per gallon of gasoline by a mid size sedan, i.e. to triple the existing mileage and to reduce proportionally the emissions. Similar activity was undertaken in Europe with the goal of a 3 liter/100 km car, and also in Japan. The recent demonstration results are confirming the feasibility of such a car in the near future. This is creating new opportunity for hydrogen fueled cars where the hydrogen storage limitations could be overcome with an acceptable size of hydrogen tank and additional energy from the electric battery. Such hybrid hydrogen electric vehicle would be a zero emission vehicle. Still, the commercialization of such a car, which would also provide the customer with adequate performance, drive ability and comfort, requires several advanced solutions which are already emerging from the R and D work initiated by the PNGV. (author)

A Systematic Transport and Thermodynamic Study of Heavy Transition Metal Oxides with Hexagonal Structure

Science.gov (United States)

Butrouna, Kamal

There is no apparent, dominant interaction in heavy transition metal oxides (TMO), especially in 5d-TMO, where all relevant interactions are of comparable energy scales, and therefore strongly compete. In particular, the spin-orbit interaction (SOI) strongly competes with the electron-lattice and on-site Coulomb interaction (U). Therefore, any tool that allows one to tune the relative strengths of SOI and U is expected to offer an opportunity for the discovery and study of novel materials. BaIrO3 is a magnetic insulator driven by SOI, whereas the isostructural BaRuO3 is a paramagnetic metal. The contrasting ground states have been shown to result from the critical role of SOI in the iridate. This dissertation thoroughly examines a wide array of newly observed novel phenomena induced by adjusting the relative strengths of SOI and U via a systematic chemical substitution of the Ru4+(4d 4) ions for Ir4+(5d5) ions in BaIrO3, i.e., in high quality single crystals of BaIr1--x RuxO3(0.0 ≤ x ≤ 1.0). Our investigation of structural, magnetic, transport and thermal properties reveals that Ru substitution directly rebalances the competing energies so profoundly that it generates a rich phase diagram for BaIr 1--xRuxO 3 featuring two major effects: (1) Light Ru doping (0 ≤ x ≤ 0.15) prompts a simultaneous and precipitous drop in both the magnetic ordering temperature TC and the electrical resistivity, which exhibits metal-insulator transition at around TC. (2) Heavier Ru doping (0.41 ≤ x ≤ 0.82) induces a robust metallic and spin frustration state. For comparison and contrast, we also substituted Rh4+(4d 5) ions for Ir4+(5d5) ions in BaIrO3, i.e. in BaIr1--xRhxO 3(0.0 ≤ x ≤ 0.1), where Rh only reduces the SOI, but without altering the band filling. Hence, this system remains tuned at the Mott instability and is very susceptible to disorder scattering which gives rise to Anderson localization. KEYWORDS: spin-orbit interaction, heavy transition metal oxides

Confidence in leadership among the newly qualified.

Science.gov (United States)

Bayliss-Pratt, Lisa; Morley, Mary; Bagley, Liz; Alderson, Steven

2013-10-23

The Francis report highlighted the importance of strong leadership from health professionals but it is unclear how prepared those who are newly qualified feel to take on a leadership role. We aimed to assess the confidence of newly qualified health professionals working in the West Midlands in the different competencies of the NHS Leadership Framework. Most respondents felt confident in their abilities to demonstrate personal qualities and work with others, but less so at managing or improving services or setting direction.

Improvement of SOI microdosimeter performance using pulse shape discrimination techniques

International Nuclear Information System (INIS)

Cornelius, I.

2002-01-01

Full text: Microdosimetry is used to study the radiobiological properties of densely ionising radiations encountered in hadron therapy and space environments by measuring energy deposition in microscopic volumes. The creation of a solid state microdosimeter to replace the traditional tissue equivalent proportional counter is a topic of ongoing research. The Centre for Medical Radiation Physics has been investigating a technique using microscopic arrays of reverse biased pn junctions to measure the linear energy transfer of ions. A prototype silicon-on-insulator (SOI) microdosimeter was developed and measurements were conducted at boron neutron capture therapy, proton therapy, and fast neutron therapy facilities. Previous studies have shown the current microdosimeter possesses a poorly defined sensitive volume, a consequence of charge collection events being measured for ion strikes outside the pn junction via the diffusion of charge carriers. As a result, the amount of charge collected by the microdosimeter following an ion strike has a strong dependence on the location of the strike on the device and the angle of incidence of the ion. The aim of this work was to investigate the use of pulse shape discrimination (PSD) techniques to preclude the acquisition of events resulting from ion strikes outside the depletion region of the pn junction. Experiments were carried out using the Heavy Ion Microprobe (HIMP) at the Australian Nuclear Science and Technology Organisation, Lucas Heights, Australia. The HIMP was used to measure the charge collection time as a function of ion strike location on the microdosimeter array. As expected, the charge collection time was seen to increase monotonically as the distance of the ion strike from the junction increased. The charge collection time corresponding to ion strikes within the junction was determined. Through use of suitable electronics it was possible to gate the charge collection signal based on simultaneous measurements of

In-core fuel disruption experiments simulating LOF accidents for homogeneous and heterogeneous core LMFBRs: FD2/4 series

International Nuclear Information System (INIS)

Wright, S.A.; Mast, P.K.; Schumacher, Gustav; Fischer, E.A.

1982-01-01

A series of Fuel Disruption (FD) experiments simulating LOF accidents transients for homogeneous- and heterogeneous-core LMFBRs is currently being performed in the Annular Core Research Reactor at SNL. The test fuel is observed with high-speed cinematography to determine the timing and the mode of the fuel disruption. The five experiments performed to date show that the timing and mode of fuel disruption depend on the power level, fuel temperature (after preheat and at disruption), and the fuel temperature gradient. Two basic modes of fuel disruption were observed; solid-state disruption and liquid-state swelling followed by slumping. Solid-state dispersive fuel behavior (several hundred degrees prior to fuel melting) is only observed at high power levels (6P 0 ), low preheat temperatures (2000 K), and high thermal gradients (2800 K/mm). The swelling/slumping behavior was observed in all cases near the time of fuel melting. Computational models have been developed that predict the fuel disruption modes and timing observed in the experiments

A hybrid magnetic/complementary metal oxide semiconductor three-context memory bit cell for non-volatile circuit design

International Nuclear Information System (INIS)

Jovanović, B.; Brum, R. M.; Torres, L.

2014-01-01

After decades of continued scaling to the beat of Moore's law, it now appears that conventional silicon based devices are approaching their physical limits. In today's deep-submicron nodes, a number of short-channel and quantum effects are emerging that affect the manufacturing process, as well as, the functionality of the microelectronic systems-on-chip. Spintronics devices that exploit both the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, are promising solutions to circumvent these scaling threats. Being compatible with the CMOS technology, such devices offer a promising synergy of radiation immunity, infinite endurance, non-volatility, increased density, etc. In this paper, we present a hybrid (magnetic/CMOS) cell that is able to store and process data both electrically and magnetically. The cell is based on perpendicular spin-transfer torque magnetic tunnel junctions (STT-MTJs) and is suitable for use in magnetic random access memories and reprogrammable computing (non-volatile registers, processor cache memories, magnetic field-programmable gate arrays, etc). To demonstrate the potential our hybrid cell, we physically implemented a small hybrid memory block using 45 nm × 45 nm round MTJs for the magnetic part and 28 nm fully depleted silicon on insulator (FD-SOI) technology for the CMOS part. We also report the cells measured performances in terms of area, robustness, read/write speed and energy consumption

A hybrid magnetic/complementary metal oxide semiconductor three-context memory bit cell for non-volatile circuit design

Energy Technology Data Exchange (ETDEWEB)

Jovanović, B., E-mail: bojan.jovanovic@lirmm.fr, E-mail: lionel.torres@lirmm.fr; Brum, R. M.; Torres, L. [LIRMM—University of Montpellier 2/UMR CNRS 5506, 161 Rue Ada, 34095 Montpellier (France)

2014-04-07

After decades of continued scaling to the beat of Moore's law, it now appears that conventional silicon based devices are approaching their physical limits. In today's deep-submicron nodes, a number of short-channel and quantum effects are emerging that affect the manufacturing process, as well as, the functionality of the microelectronic systems-on-chip. Spintronics devices that exploit both the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, are promising solutions to circumvent these scaling threats. Being compatible with the CMOS technology, such devices offer a promising synergy of radiation immunity, infinite endurance, non-volatility, increased density, etc. In this paper, we present a hybrid (magnetic/CMOS) cell that is able to store and process data both electrically and magnetically. The cell is based on perpendicular spin-transfer torque magnetic tunnel junctions (STT-MTJs) and is suitable for use in magnetic random access memories and reprogrammable computing (non-volatile registers, processor cache memories, magnetic field-programmable gate arrays, etc). To demonstrate the potential our hybrid cell, we physically implemented a small hybrid memory block using 45 nm × 45 nm round MTJs for the magnetic part and 28 nm fully depleted silicon on insulator (FD-SOI) technology for the CMOS part. We also report the cells measured performances in terms of area, robustness, read/write speed and energy consumption.

Quantitation of polycyclic aromatic hydrocarbons (PAH4) in cocoa and chocolate samples by an HPLC-FD method.

Science.gov (United States)

Raters, Marion; Matissek, Reinhard

2014-11-05

As a consequence of the PAH4 (sum of four different polycyclic aromatic hydrocarbons, named benzo[a]anthracene, chrysene, benzo[b]fluoranthene, and benzo[a]pyrene) maximum levels permitted in cocoa beans and derived products as of 2013, an high-performance liquid chromatography with fluorescence detection method (HPLC-FD) was developed and adapted to the complex cocoa butter matrix to enable a simultaneous determination of PAH4. The resulting analysis method was subsequently successfully validated. This method meets the requirements of Regulation (EU) No. 836/2011 regarding analysis methods criteria for determining PAH4 and is hence most suitable for monitoring the observance of the maximum levels applicable under Regulation (EU) No. 835/2011. Within the scope of this work, a total of 218 samples of raw cocoa, cocoa masses, and cocoa butter from several sample years (1999-2012), of various origins and treatments, as well as cocoa and chocolate products were analyzed for the occurrence of PAH4. In summary, it is noted that the current PAH contamination level of cocoa products can be deemed very slight overall.

Emerging solid-state laser technology by lidar/DIAL remote sensing

Science.gov (United States)

Killinger, Dennis

1992-01-01

Significant progress has been made in recent years in the development of new, solid-state laser sources. This talk will present an overview of some of the new developments in solid-state lasers, and their application toward lidar/DIAL measurements of the atmosphere. Newly emerging lasers such as Ho:YAG, Tm:YAG, OPO, and Ti:Sapphire will be covered, along with the spectroscopic parameters required for differential operational modes of atmospheric remote sensing including Doppler-Windshear lidar, Tunable laser detection of water/CO2, and broad linewidth OPO's for open path detection of pollutant hydrocarbon gases. Additional considerations of emerging laser technology for lidar/DIAL will also be covered.

InP on SOI devices for optical communication and optical network on chip

Science.gov (United States)

Fedeli, J.-M.; Ben Bakir, B.; Olivier, N.; Grosse, Ph.; Grenouillet, L.; Augendre, E.; Phillippe, P.; Gilbert, K.; Bordel, D.; Harduin, J.

2011-01-01

For about ten years, we have been developing InP on Si devices under different projects focusing first on μlasers then on semicompact lasers. For aiming the integration on a CMOS circuit and for thermal issue, we relied on SiO2 direct bonding of InP unpatterned materials. After the chemical removal of the InP substrate, the heterostructures lie on top of silicon waveguides of an SOI wafer with a separation of about 100nm. Different lasers or photodetectors have been achieved for off-chip optical communication and for intra-chip optical communication within an optical network. For high performance computing with high speed communication between cores, we developed InP microdisk lasers that are coupled to silicon waveguide and produced 100μW of optical power and that can be directly modulated up to 5G at different wavelengths. The optical network is based on wavelength selective circuits with ring resonators. InGaAs photodetectors are evanescently coupled to the silicon waveguide with an efficiency of 0.8A/W. The fabrication has been demonstrated at 200mm wafer scale in a microelectronics clean room for CMOS compatibility. For off-chip communication, silicon on InP evanescent laser have been realized with an innovative design where the cavity is defined in silicon and the gain localized in the QW of bonded InP hererostructure. The investigated devices operate at continuous wave regime with room temperature threshold current below 100 mA, the side mode suppression ratio is as high as 20dB, and the fibercoupled output power is {7mW. Direct modulation can be achieved with already 6G operation.

A further evaluation of herbicides for post-emergence use in short rotation coppice

Energy Technology Data Exchange (ETDEWEB)

Turnbull, D.J.

2002-07-01

This report summarises the findings of a project evaluating the safety and efficiency of eleven herbicides for controlling weeds in newly plated willow short rotation coppices, and provides growers with information on post-emergence herbicide options, control of problem weeds, and emergency treatments. Weed germination, crop safety, and the encouraging results obtained using Reflex T and Impuls are discussed. It is suggested that a Technical Register of herbicide applications with contributions by growers and advisers should be considered by the British Biogen trade industry body.

Ff-nano, Short Functionalized Nanorods Derived from Ff (f1, fd or M13 Filamentous Bacteriophage

Directory of Open Access Journals (Sweden)

Sadia eSattar

2015-04-01

Full Text Available F-specific filamentous phage of Escherichia coli (Ff: f1, M13 or fd are long thin filaments (860 nm x 6 nm. They have been a major workhorse in display technologies and bionanotechnology; however, some applications are limited by the high length-to-diameter ratio of Ff. Furthermore, use of functionalized Ff outside of laboratory containment is in part hampered by the fact that they are genetically modified viruses. We have now developed a system for production and purification of very short functionalized Ff-phage-derived nanorods, named Ff-nano, that are only 50 nm in length. In contrast to standard Ff-derived vectors that replicate in E. coli and contain antibiotic-resistance genes, Ff-nano are protein DNA complexes that cannot replicate on their own and do not contain any coding sequences. These nanorods show an increased resistance to heating at 70 °C in 1 % SDS in comparison to the full-length Ff phage of the same coat composition. We demonstrate that functionalized Ff-nano particles are suitable for application as detection particles in sensitive and quantitative dipstick lateral flow diagnostic assay for human plasma fibronectin.

Deconvolution of ferredoxin, plastocyanin, and P700 transmittance changes in intact leaves with a new type of kinetic LED array spectrophotometer.

Science.gov (United States)

Klughammer, Christof; Schreiber, Ulrich

2016-05-01

A newly developed compact measuring system for assessment of transmittance changes in the near-infrared spectral region is described; it allows deconvolution of redox changes due to ferredoxin (Fd), P700, and plastocyanin (PC) in intact leaves. In addition, it can also simultaneously measure chlorophyll fluorescence. The major opto-electronic components as well as the principles of data acquisition and signal deconvolution are outlined. Four original pulse-modulated dual-wavelength difference signals are measured (785-840 nm, 810-870 nm, 870-970 nm, and 795-970 nm). Deconvolution is based on specific spectral information presented graphically in the form of 'Differential Model Plots' (DMP) of Fd, P700, and PC that are derived empirically from selective changes of these three components under appropriately chosen physiological conditions. Whereas information on maximal changes of Fd is obtained upon illumination after dark-acclimation, maximal changes of P700 and PC can be readily induced by saturating light pulses in the presence of far-red light. Using the information of DMP and maximal changes, the new measuring system enables on-line deconvolution of Fd, P700, and PC. The performance of the new device is demonstrated by some examples of practical applications, including fast measurements of flash relaxation kinetics and of the Fd, P700, and PC changes paralleling the polyphasic fluorescence rise upon application of a 300-ms pulse of saturating light.

Problems faced by newly diagnosed diabetes mellitus patients at ...

African Journals Online (AJOL)

Diabetes mellitus can be a frightening experience for newly diagnosed patients. The aim of this study was to determine and describe the problems faced by newly diagnosed diabetes mellitus patients at primary healthcare facilities at Mopani district, Limpopo Province. A qualitative, descriptive and contextual research ...

High-speed LWR transients simulation for optimizing emergency response

International Nuclear Information System (INIS)

Wulff, W.; Cheng, H.S.; Lekach, S.V.; Mallen, A.N.; Stritar, A.

1984-01-01

The purpose of computer-assisted emergency response in nuclear power plants, and the requirements for achieving such a response, are presented. An important requirement is the attainment of realistic high-speed plant simulations at the reactor site. Currently pursued development programs for plant simulations are reviewed. Five modeling principles are established and a criterion is presented for selecting numerical procedures and efficient computer hardware to achieve high-speed simulations. A newly developed technology for high-speed power plant simulation is described and results are presented. It is shown that simulation speeds ten times greater than real-time process-speeds are possible, and that plant instrumentation can be made part of the computational loop in a small, on-site minicomputer. Additional technical issues are presented which must still be resolved before the newly developed technology can be implemented in a nuclear power plant

Freedom to explore the self: How emerging adults use leisure to develop identity.

Science.gov (United States)

Layland, Eric K; Hill, Brian J; Nelson, Larry J

2018-01-01

During a period of newly attained freedom preceding commitments expected in adulthood, emerging adults are faced with the major task of identity development. Leisure provides a context with relative freedom wherein emerging adults explore new experiences and access opportunities not always available in more constrained environments like work and school. In this case study of 40 emerging adults from 18 countries ( M age =23.14 years), qualitative interviews were used to investigate the role of leisure as a context for identity development. Results indicate five major themes for leisure-based identity development in emerging adulthood: discovering identity, forming identity, defining identity, positioning identity, and forgoing opportunities. These themes support leisure as an additional context wherein emerging adults may flourish on the pathway toward adulthood. Access to both novel and familiar leisure provide a context for emerging adults to actively direct their identity development through decisions made in leisure time.

Freedom to explore the self: How emerging adults use leisure to develop identity

Science.gov (United States)

Layland, Eric K.; Hill, Brian J.; Nelson, Larry J.

2017-01-01

During a period of newly attained freedom preceding commitments expected in adulthood, emerging adults are faced with the major task of identity development. Leisure provides a context with relative freedom wherein emerging adults explore new experiences and access opportunities not always available in more constrained environments like work and school. In this case study of 40 emerging adults from 18 countries (Mage=23.14 years), qualitative interviews were used to investigate the role of leisure as a context for identity development. Results indicate five major themes for leisure-based identity development in emerging adulthood: discovering identity, forming identity, defining identity, positioning identity, and forgoing opportunities. These themes support leisure as an additional context wherein emerging adults may flourish on the pathway toward adulthood. Access to both novel and familiar leisure provide a context for emerging adults to actively direct their identity development through decisions made in leisure time. PMID:29276528

Voltage-driven versus current-driven spin torque in anisotropic tunneling junctions

KAUST Repository

Manchon, Aurelien

2011-01-01

Nonequilibrium spin transport in a magnetic tunnel junction comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is studied theoretically. The interfacial SOI generates a spin torque of the form T=T∥ M×(z× M)+T⊥ z× M, even in the absence of an external spin polarizer. For thick and large tunnel barriers, the torque reduces to the perpendicular component T⊥, which can be electrically tuned by applying a voltage across the insulator. In the limit of thin and low tunnel barriers, the in-plane torque T∥ emerges, proportional to the tunneling current density. Experimental implications on magnetic devices are discussed. © 2011 IEEE.

Voltage-driven versus current-driven spin torque in anisotropic tunneling junctions

KAUST Repository

Manchon, Aurelien

2011-10-01

Nonequilibrium spin transport in a magnetic tunnel junction comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is studied theoretically. The interfacial SOI generates a spin torque of the form T=T∥ M×(z× M)+T⊥ z× M, even in the absence of an external spin polarizer. For thick and large tunnel barriers, the torque reduces to the perpendicular component T⊥, which can be electrically tuned by applying a voltage across the insulator. In the limit of thin and low tunnel barriers, the in-plane torque T∥ emerges, proportional to the tunneling current density. Experimental implications on magnetic devices are discussed. © 2011 IEEE.

Newly graduated nurses' use of knowledge sources in clinical decision-making

DEFF Research Database (Denmark)

Voldbjerg, Siri Lygum; Grønkjaer, Mette; Wiechula, Rick

2017-01-01

AIMS AND OBJECTIVES: To explore which knowledge sources newly graduated nurses' use in clinical decision-making and why and how they are used. BACKGROUND: In spite of an increased educational focus on skills and competencies within evidence based practice newly graduated nurses' ability to use...... approaches to strengthen the knowledgebase used in clinical decision-making. DESIGN AND METHODS: Ethnographic study using participant-observation and individual semi-structured interviews of nine Danish newly graduated nurses in medical and surgical hospital settings. RESULTS: Newly graduates use...... in clinical decision-making. If newly graduates are to be supported in an articulate and reflective use of a variety of sources, they have to be allocated to experienced nurses who model a reflective, articulate and balanced use of knowledge sources. This article is protected by copyright. All rights reserved....

Using decision analysis to support proactive management of emerging infectious wildlife diseases

Science.gov (United States)

Grant, Evan H. Campbell; Muths, Erin L.; Katz, Rachel A.; Canessa, Stefano; Adams, Michael J.; Ballard, Jennifer R.; Berger, Lee; Briggs, Cheryl J.; Coleman, Jeremy; Gray, Matthew J.; Harris, M. Camille; Harris, Reid N.; Hossack, Blake R.; Huyvaert, Kathryn P.; Kolby, Jonathan E.; Lips, Karen R.; Lovich, Robert E.; McCallum, Hamish I.; Mendelson, Joseph R.; Nanjappa, Priya; Olson, Deanna H.; Powers, Jenny G.; Richgels, Katherine L. D.; Russell, Robin E.; Schmidt, Benedikt R.; Spitzen-van der Sluijs, Annemarieke; Watry, Mary Kay; Woodhams, Douglas C.; White, C. LeAnn

2017-01-01

Despite calls for improved responses to emerging infectious diseases in wildlife, management is seldom considered until a disease has been detected in affected populations. Reactive approaches may limit the potential for control and increase total response costs. An alternative, proactive management framework can identify immediate actions that reduce future impacts even before a disease is detected, and plan subsequent actions that are conditional on disease emergence. We identify four main obstacles to developing proactive management strategies for the newly discovered salamander pathogen Batrachochytrium salamandrivorans (Bsal). Given that uncertainty is a hallmark of wildlife disease management and that associated decisions are often complicated by multiple competing objectives, we advocate using decision analysis to create and evaluate trade-offs between proactive (pre-emergence) and reactive (post-emergence) management options. Policy makers and natural resource agency personnel can apply principles from decision analysis to improve strategies for countering emerging infectious diseases.

Value of a newly sequenced bacterial genome

DEFF Research Database (Denmark)

Barbosa, Eudes; Aburjaile, Flavia F; Ramos, Rommel Tj

2014-01-01

and annotation will not be undertaken. It is important to know what is lost when we settle for a draft genome and to determine the "scientific value" of a newly sequenced genome. This review addresses the expected impact of newly sequenced genomes on antibacterial discovery and vaccinology. Also, it discusses...... heightened expectations that NGS would boost antibacterial discovery and vaccine development. Although many possible drug and vaccine targets have been discovered, the success rate of genome-based analysis has remained below expectations. Furthermore, NGS has had consequences for genome quality, resulting...

Contributions of incidence and persistence to the prevalence of childhood obesity during the emerging epidemic in Denmark

DEFF Research Database (Denmark)

Andersen, Lise Geisler; Baker, Jennifer L; Sørensen, Thorkild I A

2012-01-01

Prevalence of obesity is the result of preceding incidence of newly developed obesity and persistence of obesity. We investigated whether increasing incidence and/or persistence during childhood drove the prevalence of childhood obesity during the emerging epidemic....

Identification and functional analysis of delta-9 desaturase, a key enzyme in PUFA Synthesis, isolated from the oleaginous diatom Fistulifera.

Directory of Open Access Journals (Sweden)

Masaki Muto

Full Text Available Oleaginous microalgae are one of the promising resource of nonedible biodiesel fuel (BDF feed stock alternatives. Now a challenge task is the decrease of the long-chain polyunsaturated fatty acids (PUFAs content affecting on the BDF oxidative stability by using gene manipulation techniques. However, only the limited knowledge has been available concerning the fatty acid and PUFA synthesis pathways in microalgae. Especially, the function of Δ9 desaturase, which is a key enzyme in PUFA synthesis pathway, has not been determined in diatom. In this study, 4 Δ(9 desaturase genes (fD9desA, fD9desB, fD9desC and fD9desD from the oleaginous diatom Fistulifera were newly isolated and functionally characterized. The putative Δ(9 acyl-CoA desaturases in the endoplasmic reticulum (ER showed 3 histidine clusters that are well-conserved motifs in the typical Δ(9 desaturase. Furthermore, the function of these Δ(9 desaturases was confirmed in the Saccharomyces cerevisiae ole1 gene deletion mutant (Δole1. All the putative Δ(9 acyl-CoA desaturases showed Δ(9 desaturation activity for C16∶0 fatty acids; fD9desA and fD9desB also showed desaturation activity for C18∶0 fatty acids. This study represents the first functional analysis of Δ(9 desaturases from oleaginous microalgae and from diatoms as the first enzyme to introduce a double bond in saturated fatty acids during PUFA synthesis. The findings will provide beneficial insights into applying metabolic engineering processes to suppressing PUFA synthesis in this oleaginous microalgal strain.

Identification and functional analysis of delta-9 desaturase, a key enzyme in PUFA Synthesis, isolated from the oleaginous diatom Fistulifera.

Science.gov (United States)

Muto, Masaki; Kubota, Chihiro; Tanaka, Masayoshi; Satoh, Akira; Matsumoto, Mitsufumi; Yoshino, Tomoko; Tanaka, Tsuyoshi

2013-01-01

Oleaginous microalgae are one of the promising resource of nonedible biodiesel fuel (BDF) feed stock alternatives. Now a challenge task is the decrease of the long-chain polyunsaturated fatty acids (PUFAs) content affecting on the BDF oxidative stability by using gene manipulation techniques. However, only the limited knowledge has been available concerning the fatty acid and PUFA synthesis pathways in microalgae. Especially, the function of Δ9 desaturase, which is a key enzyme in PUFA synthesis pathway, has not been determined in diatom. In this study, 4 Δ(9) desaturase genes (fD9desA, fD9desB, fD9desC and fD9desD) from the oleaginous diatom Fistulifera were newly isolated and functionally characterized. The putative Δ(9) acyl-CoA desaturases in the endoplasmic reticulum (ER) showed 3 histidine clusters that are well-conserved motifs in the typical Δ(9) desaturase. Furthermore, the function of these Δ(9) desaturases was confirmed in the Saccharomyces cerevisiae ole1 gene deletion mutant (Δole1). All the putative Δ(9) acyl-CoA desaturases showed Δ(9) desaturation activity for C16∶0 fatty acids; fD9desA and fD9desB also showed desaturation activity for C18∶0 fatty acids. This study represents the first functional analysis of Δ(9) desaturases from oleaginous microalgae and from diatoms as the first enzyme to introduce a double bond in saturated fatty acids during PUFA synthesis. The findings will provide beneficial insights into applying metabolic engineering processes to suppressing PUFA synthesis in this oleaginous microalgal strain.

In vivo real-time monitoring system of electroporation mediated control of transdermal and topical drug delivery.

Science.gov (United States)

Blagus, Tanja; Markelc, Bostjan; Cemazar, Maja; Kosjek, Tina; Preat, Veronique; Miklavcic, Damijan; Sersa, Gregor

2013-12-28

Electroporation (EP) is a physical method for the delivery of molecules into cells and tissues, including the skin. In this study, in order to control the degree of transdermal and topical drug delivery, EP at different amplitudes of electric pulses was evaluated. A new in vivo real-time monitoring system based on fluorescently labeled molecules was developed, for the quantification of transdermal and topical drug delivery. EP of the mouse skin was performed with new non-invasive multi-array electrodes, delivering different amplitudes of electric pulses ranging from 70 to 570 V, between the electrode pin pairs. Patches, soaked with 4 kDa fluorescein-isothiocyanate labeled dextran (FD), doxorubicin (DOX) or fentanyl (FEN), were applied to the skin before and after EP. The new monitoring system was developed based on the delivery of FD to and through the skin. FD relative quantity was determined with fluorescence microscopy imaging, in the treated region of the skin for topical delivery and in a segment of the mouse tail for transdermal delivery. The application of electric pulses for FD delivery resulted in enhanced transdermal delivery. Depending on the amplitude of electric pulses, it increased up to the amplitude of 360 V, and decreased at higher amplitudes (460 and 570 V). Topical delivery steadily enhanced with increasing the amplitude of the delivered electric pulses, being even higher than after tape stripping used as a positive control. The non-invasive monitoring of the delivery of DOX, a fluorescent chemotherapeutic drug, qualitatively and quantitatively confirmed the effects of EP at 360 and 570 V pulse amplitudes on topical and transdermal drug delivery. Delivery of FEN at 360 and 570 V pulse amplitudes verified the observed effects as obtained with FD and DOX, by the measured physiological responses of the mice as well as FEN plasma concentration. This study demonstrates that with the newly developed non-invasive multi-array electrodes and with the

A Newly Emergent Turkey Arthritis Reovirus Shows Dominant Enteric Tropism and Induces Significantly Elevated Innate Antiviral and T Helper-1 Cytokine Responses.

Directory of Open Access Journals (Sweden)

Tamer A Sharafeldin

Full Text Available Newly emergent turkey arthritis reoviruses (TARV were isolated from tendons of lame 15-week-old tom turkeys that occasionally had ruptured leg tendons. Experimentally, these TARVs induced remarkable tenosynovitis in gastrocnemius tendons of turkey poults. The current study aimed to characterize the location and the extent of virus replication as well as the cytokine response induced by TARV during the first two weeks of infection. One-week-old male turkeys were inoculated orally with TARV (O'Neil strain. Copy numbers of viral genes were estimated in intestines, internal organs and tendons at ½, 1, 2, 3, 4, 7, 14 days Post inoculation (dpi. Cytokine profile was measured in intestines, spleen and leg tendons at 0, 4, 7 and 14 dpi. Viral copy number peaked in jejunum, cecum and bursa of Fabricius at 4 dpi. Copy numbers increased dramatically in leg tendons at 7 and 14 dpi while minimal copies were detected in internal organs and blood during the same period. Virus was detected in cloacal swabs at 1-2 dpi, and peaked at 14 dpi indicating enterotropism of the virus and its early shedding in feces. Elevation of IFN-α and IFN-β was observed in intestines at 7 dpi as well as a prominent T helper-1 response (IFN-γ at 7 and 14 dpi. IFN-γ and IL-6 were elevated in gastrocnemius tendons at 14 dpi. Elevation of antiviral cytokines in intestines occurred at 7dpi when a significant decline of viral replication in intestines was observed. T helper-1 response in intestines and leg tendons was the dominant T-helper response. These results suggest the possible correlation between viral replication and cytokine response in early infection of TARV in turkeys. Our findings provide novel insights which help elucidate viral pathogenesis in turkey tendons infected with TARV.

First report of two rapid-onset fatal infections caused by a newly emerging hypervirulent K. Pneumonia ST86 strain of serotype K2 in China.

Science.gov (United States)

Zhang, Yibo; Sun, Jingyong; Mi, Chenrong; Li, Wenhui; Zhao, Shengyuan; Wang, Qun; Shi, Dake; Liu, Luo; Ding, Bingyu; Chang, Yung-Fu; Guo, Hongxiong; Guo, XiaoKui; Li, Qingtian; Zhu, Yongzhang

2015-01-01

Here, we present the first report of one suspected dead case and two confirmed rapid-onset fatal infections caused by a newly emerging hypervirulent Klebsiella pneumoniae ST86 strain of serotype K2. The three cases occurred in a surgery ward during 2013 in Shanghai, China. A combination of multilocus sequence typing, pulsed-field gel electrophoresis, phenotypic and PCR tests for detecting virulence factors (VFs) was used to identify the isolates as K2 ST86 strains with common VFs, including Aerobactin and rmpA. Furthermore, the two K2 ST86 strains additionally harbored a distinct VF kfu (responsible for iron uptake system), which commonly existed in invasive K1 strains only. Thus, the unusual presence of both K1 and K2 VFs in the lethal ST86 strain might further enhance its hypervirulence and cause rapid onset of a life-threatening infection. Nevertheless, despite the administration of a combined antibiotic treatment, these three patients all died within 24 h of acute onset, thereby highlighting that the importance of early diagnosis to determine whether the ST86 strains harbor key K2 VF and unusual K1 kfu and whether patients should receive a timely and targeted antibiotic therapy to prevent ST86 induced fatal pneumonia. Finally, even though these patients are clinically improved, keeping on with oral antibiotic treatment for additional 2-3 weeks will be also vital for successfully preventing hvKP reinfection or relapse.

Performance Analysis of Compact FD-MIMO Antenna Arrays in a Correlated Environment

KAUST Repository

Nadeem, Qurrat-Ul-Ain

2017-03-06

Full dimension multiple-input-multiple-output (FDMIMO) is one of the key technologies proposed in the 3rd Generation Partnership Project (3GPP) for the fifth generation (5G) communication systems. The reason can be attributed to its ability to yield significant performance gains through the deployment of active antenna elements at the base station in the vertical as well as the conventional horizontal directions, enabling several elevation beamforming strategies. The resulting improvement in spectral efficiency largely depends on the orthogonality of the sub-channels constituting the FD-MIMO system. Accommodating a large number of antenna elements with sufficient spacing poses several constraints for practical implementation, making it imperative to consider compact antenna arrangements that minimize the overall channel correlation. Two such configurations considered in this work are the uniform linear array (ULA) and the uniform circular array (UCA) of antenna ports, where each port is mapped to a group of physical antenna elements arranged in the vertical direction. The generalized analytical expression for the spatial correlation function (SCF) for the UCA is derived, exploiting results on spherical harmonics and Legendre polynomials. The mutual coupling between antenna dipoles is accounted for and the resulting SCF is also presented. The second part of this work compares the spatial correlation and mutual information (MI) performance of the ULA and UCA configurations in the 3GPP 3D urban-macro and urban-micro cell scenarios, utilizing results from Random Matrix Theory (RMT) on the deterministic equivalent of the MI for the Kronecker channel model. Simulation results study the performance patterns of the two arrays as a function of several channel and array parameters and identify applications and environments suitable for the deployment of each array.

An evaluation of herbicides for post-emergence use in short rotation coppice

Energy Technology Data Exchange (ETDEWEB)

Turnbull, D.J.

2000-07-01

The objective of the project was to evaluate the safety and efficacy of a range of herbicides and mixtures of herbicides, with both contact and residual activity, for the post-emergence control of weeds in newly planted willow short rotation coppice (SRC). This report provides growers and advisers of short rotation coppice with important (but still limited) information on how to achieve improved weed control of problem weeds increasingly prevalent in SRC fields. This may provide guidance towards often-essential emergency treatments when the crop establishment is under considerable pressure and the potential safety, or otherwise, of certain weed-specific herbicides. (author)

Newly Generated Liquid Waste Processing Alternatives Study, Volume 1

Energy Technology Data Exchange (ETDEWEB)

Landman, William Henry; Bates, Steven Odum; Bonnema, Bruce Edward; Palmer, Stanley Leland; Podgorney, Anna Kristine; Walsh, Stephanie

2002-09-01

This report identifies and evaluates three options for treating newly generated liquid waste at the Idaho Nuclear Technology and Engineering Center of the Idaho National Engineering and Environmental Laboratory. The three options are: (a) treat the waste using processing facilities designed for treating sodium-bearing waste, (b) treat the waste using subcontractor-supplied mobile systems, or (c) treat the waste using a special facility designed and constructed for that purpose. In studying these options, engineers concluded that the best approach is to store the newly generated liquid waste until a sodium-bearing waste treatment facility is available and then to co-process the stored inventory of the newly generated waste with the sodium-bearing waste. After the sodium-bearing waste facility completes its mission, two paths are available. The newly generated liquid waste could be treated using the subcontractor-supplied system or the sodium-bearing waste facility or a portion of it. The final decision depends on the design of the sodium-bearing waste treatment facility, which will be completed in coming years.

Benchmark and parametric study of a passive flow controller (fluidic device) for the development of optimal designs using a CFD code

International Nuclear Information System (INIS)

Lim, Sang-Gyu; Lee, Seok-Ho; Kim, Han-Gon

2010-01-01

A passive flow controller or a fluidic device (FD) is used for a safety injection system (SIS) for efficient use of nuclear reactor emergency cooling water since it can control the injection flow rate in a passive and optimal way. The performance of the FD is represented by pressure loss coefficient (K-factor) which is further affected by the configuration of the components such as a control port direction and a nozzle angle. The flow control mechanism that is varied according to the water level inside a vortex chamber determines the duration of the safety injection. This paper deals with a computational fluid dynamics (CFD) analysis for simulating the flow characteristics of the FD using the ANSYS CFX 11.0. The CFD analysis is benchmarked against existing experimental data to obtain applicability to the prediction of the FD performance in terms of K-factor. The CFD calculation is implemented with Shear Stress Transport (SST) model for a swirling flow and a strong streamline curvature in the vortex chamber of the FD, considering a numerical efficiency. Based on the benchmark results, parametric analyses are performed for an optimal design of the FD by varying the control port direction and the nozzle angle. Consequently, the FD performance is enhanced according to the angle of the control port nozzle.

Une genese du «parler de soi » du deja-la a l’evocation de l’absent dans l’activite dialogique du tout jeune enfant

Directory of Open Access Journals (Sweden)

Amina Bensalah

2010-12-01

Full Text Available

L’analyse porte sur des productions langagières verbales et non-verbales les plus ordinaires entre des adultes et de très jeunes enfants âgés de moins de deux ans. En articulant les notions de l’évocation de l’absent et du déjà-là, notions qui mettent en avant le processus d’une «temporalité-spatialisée», je problématise la genèse d’un soi comme objet qui se donne à voir dans et par l’activité discursive. Mon hypothèse est que, s’agissant du tout jeune enfant qui ne peut donc s’auto-thématiser ni référer à lui-même de façon explicite, c’est bien dans l’évocation d’autrui et d’autres objets du monde qu’indirectement, il nous «parle» de lui. Trois éléments viennent étayer ma réfl exion pour répondre à la problématique posée : les notions de temporalité, de spatialité et d’affect. Elles sont clairement présentes dans les initiatives de demande, dans les mouvements des échanges et dans les séquences «pré-narratives» produites par l’enfant. Au vu des corpus, ces trois notions m’ont paru inséparables du lieu même où elles font ancrage, à savoir : l’interaction et le dialogue avec l’autre. L’approche adoptée dans l’analyse pour argumenter l’idée de l’expression d’un «parler de soi» chez le tout jeune enfant n’est pas tant, au sens strict, de type linguistique que de type pragmatique. Aussi, j’analyse les effets réciproques entre l’interaction et les échanges qui la modèlent.

Optical Characterization of Tissue Phantoms Using a Silicon Integrated fdNIRS System on Chip.

Science.gov (United States)

Sthalekar, Chirag C; Miao, Yun; Koomson, Valencia Joyner

2017-04-01

An interface circuit with signal processing and digitizing circuits for a high frequency, large area avalanche photodiode (APD) has been integrated in a 130 nm BiCMOS chip. The system enables the absolute oximetry of tissue using frequency domain Near Infrared Spectroscopy (fdNIRS). The system measures the light absorbed and scattered by the tissue by measuring the reduction in the amplitude of signal and phase shift introduced between the light source and detector which are placed a finite distance away from each other. The received 80 MHz RF signal is downconverted to a low frequency and amplified using a heterodyning scheme. The front-end transimpedance amplifier has a 3-level programmable gain that increases the dynamic range to 60 dB. The phase difference between an identical reference channel and the optical channel is measured with a 0.5° accuracy. The detectable current range is [Formula: see text] and with a 40 A/W reponsivity using the APD, power levels as low as 500 pW can be detected. Measurements of the absorption and reduced scattering coefficients of solid tissue phantoms using this system are compared with those using a commercial instrument with differences within 30%. Measurement of a milk based liquid tissue phantom show an increase in absorption coefficient with addition of black ink. The miniaturized circuit serves as an efficiently scalable system for multi-site detection for applications in neonatal cerebral oximetry and optical mammography.

Survey of Munitions Response Technologies

Science.gov (United States)

2006-06-01

item. EMI detectors are operated in either time domain (TD) or frequency domain (FD). A common example of a hand-held EMI sensor is the 3-1 metal ...held Digital Emerging Fisher 1266-X Metal Detector Hand-held Analog Established Foerster MINEX 2FD 4.500 Hand-held Analog Established Minelab...ferrous and nonferrous metallic objects. • Effective in detecting near-surface objects. • Can be effective in geology that challenges magnetometers

The science and fiction of emerging rickettsioses.

Science.gov (United States)

Paddock, Christopher D

2009-05-01

As newly recognized rickettsial diseases and rickettsial pathogens increase in scope and magnitude, several elements related to the concept of emerging rickettsioses deserve consideration. Newly identified rickettsiae may be mildly pathogenic, or perhaps even nonpathogenic, and have little direct impact on human or animal health, yet nonetheless wield considerable influence on the epidemiology and ecology of historically recognized diseases. In this context "new" rickettsioses provide a lens through which "old" rickettsioses are more accurately represented. Predicting pathogen from nonpathogen is not an exact science, particularly as so few rickettsiae have been broadly accepted as nonpathogenic by contemporary rickettsiologists. However, various factors relating to specific physiologic requirements and molecular machinery of the particular rickettsia, as well as characteristics of its invertebrate host that either position or exclude the rickettsia from infecting a human host, must be considered. Close inspection of mild or atypical forms of historically recognized rickettsioses and a greater emphasis on culture- and molecular-based diagnostic techniques are the keys to identifying future rickettsial agents of disease.

Forum on Emerging Infectious Diseases Highlights Leading-Edge Research | Poster

Science.gov (United States)

Scientists and professionals from multiple governmental agencies recently gathered at NCI at Frederick for a forum on newly emerging infectious diseases, threats to public health, and ongoing efforts to study high-risk pathogens. During the one-day event, which was sponsored by the National Interagency Confederation for Biological Research’s Scientific Interaction Subcommittee, nine speakers from four agencies shared their research and their agencies’ endeavors to address current and future biological threats.

Observation of the bone mineral density of newly formed bone using rabbits. Compared with newly formed bone around implants and cortical bone

International Nuclear Information System (INIS)

Nakada, Hiroshi; Numata, Yasuko; Sakae, Toshiro; Tamaki, Hiroyuki; Kato, Takao

2009-01-01

There have been many studies reporting that newly formed bone around implants is spongy bone. However, although the morphology is reported as being like spongy bone, it is difficult to discriminate whether the bone quality of newly formed bone appears similar to osteoid or cortical bone; therefore, evaluation of bone quality is required. The aims of this study were to measure the bone mineral density (BMD) values of newly formed bone around implants after 4, 8, 16, 24 and 48 weeks, to represent these values on three-dimensional color mapping (3Dmap), and to evaluate the change in bone quality associated with newly formed bone around implants. The animal experimental protocol of this study was approved by the Ethics Committee for Animal Experiments of our University. This experiment used 20 surface treatment implants (Ti-6Al-4V alloy: 3.1 mm in diameter and 30.0 mm in length) by grit-blasting. They were embedded into surgically created flaws in femurs of 20 New Zealand white rabbits (16 weeks old, male). The rabbits were sacrificed with an ear intravenous overdose of pentobarbital sodium under general anesthesia each period, and the femurs were resected. We measured BMD of newly formed bone around implants and cortical bone using Micro-CT, and the BMD distribution map of 3Dmap (TRI/3D Bon BMD, Ratoc System Engineering). The BMD of cortical bone was 1,026.3±44.3 mg/cm 3 at 4 weeks, 1,023.8±40.9 mg/cm 3 at 8 weeks, 1,048.2±45.6 mg/cm 3 at 16 weeks, 1,067.2±60.2 mg/cm 3 at 24 weeks, and 1,069.3±50.7 mg/cm 3 at 48 weeks after implantation, showing a non-significant increase each period. The BMD of newly formed bone around implants was 296.8±25.6 mg/cm 3 at 4 weeks, 525.0±72.4 mg/cm 3 at 8 weeks, 691.2±26.0 mg/cm 3 at 16 weeks, 776.9±27.7 mg/cm 3 at 24 weeks, and 845.2±23.1 mg/cm 3 at 48 weeks after implantation, showing a significant increase after each period. It was revealed that the color scale of newly formed bone was Low level at 4 weeks, and then it

A 3D DLM/FD method for simulating the motion of spheres and ellipsoids under creeping flow conditions

Science.gov (United States)

Pan, Tsorng-Whay; Guo, Aixia; Chiu, Shang-Huan; Glowinski, Roland

2018-01-01

We present in this article a novel distributed Lagrange multiplier/fictitious domain (DLM/FD) method for simulating fluid-particle interaction in three-dimensional (3D) Stokes flow. The methodology is validated by comparing the numerical results for a neutrally buoyant particle, of either spherical or prolate shape, with the associated Jeffrey's solutions for a simple shear flow. The results concerning two balls, interacting under creeping flow conditions in a bounded shear flow, are consistent with those available in the literature. We will discuss also the interactions of two balls in a bounded shear flow, when these balls are very close initially. For a prolate ellipsoid rotating in a shear flow under the sole effect of the particle inertia, shear plane tumbling is stable, while log-rolling is unstable. For two prolate ellipsoids interacting in a bounded shear flow, the results are similar to those for two balls if the major axes are initially orthogonal to the shear plane (a result not at all surprising considering that the intersections of the ellipsoids with the shear pane are circular).

The practical skills of newly qualified nurses.

Science.gov (United States)

Danbjørg, Dorthe Boe; Birkelund, Regner

2011-02-01

This paper reports the findings from a study of newly qualified nurses and which subjects the nurses regarded as the most important in order to be able to live up to the requirements of clinical practice, and how they experience their potential for developing practical and moral skills, after the decrease in practical training. A qualitative approach guided the research process and the analysis of the data. The data was collected by participant observation and qualitative interviews with four nurses as informants. The conclusions made in this study are based on the statements and the observations of the newly qualified nurses. Our findings are discussed in relation to the Aristotelian concept and other relevant literature. The main message is that the newly qualified nurses did not feel equipped when they finished their training. This could be interpreted as a direct consequence of the decrease in practical training. Our study also underlines that the way nursing theory is perceived and taught is problematic. The interviews revealed that the nurses think that nursing theories should be applied directly in practice. This misunderstanding is probably also applicable to the teachers of the theories. Copyright © 2010 Elsevier Ltd. All rights reserved.

Newly graduated nurses' use of knowledge sources: a meta-ethnography.

Science.gov (United States)

Voldbjerg, Siri Lygum; Grønkjaer, Mette; Sørensen, Erik Elgaard; Hall, Elisabeth O C

2016-08-01

To advance evidence on newly graduated nurses' use of knowledge sources. Clinical decisions need to be evidence-based and understanding the knowledge sources that newly graduated nurses use will inform both education and practice. Qualitative studies on newly graduated nurses' use of knowledge sources are increasing though generated from scattered healthcare contexts. Therefore, a metasynthesis of qualitative research on what knowledge sources new graduates use in decision-making was conducted. Meta-ethnography. Nineteen reports, representing 17 studies, published from 2000-2014 were identified from iterative searches in relevant databases from May 2013-May 2014. Included reports were appraised for quality and Noblit and Hare's meta-ethnography guided the interpretation and synthesis of data. Newly graduated nurses' use of knowledge sources during their first 2-year postgraduation were interpreted in the main theme 'self and others as knowledge sources,' with two subthemes 'doing and following' and 'knowing and doing,' each with several elucidating categories. The metasynthesis revealed a line of argument among the report findings underscoring progression in knowledge use and perception of competence and confidence among newly graduated nurses. The transition phase, feeling of confidence and ability to use critical thinking and reflection, has a great impact on knowledge sources incorporated in clinical decisions. The synthesis accentuates that for use of newly graduated nurses' qualifications and skills in evidence-based practice, clinical practice needs to provide a supportive environment which nurtures critical thinking and questions and articulates use of multiple knowledge sources. © 2016 John Wiley & Sons Ltd.

'These reforms killed me': doctors' perceptions of family medicine during the transition from communism to capitalism.

Science.gov (United States)

Czachowski, Slawomir; Pawlikowska, Teresa

2011-08-01

The establishment of family medicine (FM) in Poland following political reform. To describe family doctors' (FD) experiences during the introduction of FM. A qualitative study of 25 FDs in Poland, using thematic analysis of semi-structured interviews. Open-structured narrative-based interviews with five FDs were then used to deepen understanding of the major emergent themes. Fifteen of 25 had a different initial specialization to FM; 10 of 25 overseas work experience. Many doctors were driven by personal circumstances to engage with this new discipline, which provided a better fit with their life circumstances and a chance to escape from hierarchical structures characterizing the old regime. Personal experience of role models helped embrace FM, whereas adherence to ingrained biomedical approaches led to difficulty with exposure to common problems and could facilitate burnout. Shifting relationships in the reformed system caused tensions between primary and secondary care. While relationships with patients and specialists were being renegotiated, the concept of an independent FD practice surfaced. We observed that the most serious problems that the doctors encountered were circumstances related to the former health care system, in contrast to any lack of professional skills. This is a rare qualitative study exploring Polish doctors' perspectives of the health care reform after the collapse of communism in Central and Eastern Europe. This analysis of newly qualified FDs has provided an insight into the authentic experiences, and motivation of grass roots FM pioneers in Poland.

Pea VEGETATIVE2 Is an FD Homolog That Is Essential for Flowering and Compound Inflorescence Development.

Science.gov (United States)

Sussmilch, Frances C; Berbel, Ana; Hecht, Valérie; Vander Schoor, Jacqueline K; Ferrándiz, Cristina; Madueño, Francisco; Weller, James L

2015-04-01

As knowledge of the gene networks regulating inflorescence development in Arabidopsis thaliana improves, the current challenge is to characterize this system in different groups of crop species with different inflorescence architecture. Pea (Pisum sativum) has served as a model for development of the compound raceme, characteristic of many legume species, and in this study, we characterize the pea VEGETATIVE2 (VEG2) locus, showing that it is critical for regulation of flowering and inflorescence development and identifying it as a homolog of the bZIP transcription factor FD. Through detailed phenotypic characterizations of veg2 mutants, expression analyses, and the use of protein-protein interaction assays, we find that VEG2 has important roles during each stage of development of the pea compound inflorescence. Our results suggest that VEG2 acts in conjunction with multiple FLOWERING LOCUS T (FT) proteins to regulate expression of downstream target genes, including TERMINAL FLOWER1, LEAFY, and MADS box homologs, and to facilitate cross-regulation within the FT gene family. These findings further extend our understanding of the mechanisms underlying compound inflorescence development in pea and may have wider implications for future manipulation of inflorescence architecture in related legume crop species. © 2015 American Society of Plant Biologists. All rights reserved.

Écritures de soi en souffrance: une lecture des régimes structurant l’imaginaire du texte social vivant

Directory of Open Access Journals (Sweden)

Orazio Maria Valastro

2010-02-01

Full Text Available Les études ici réunies vont nous permettre d’examiner différentes genres d’écritures et typologies d’écrivains (poétique et épistolaire, roman autobiographique et autofiction, narratif et témoignage, explorant un corpus considérable (œuvres littéraires et littératures personnelles et des pratiques significatives (activités narratives et autobiographiques. Le thème proposé, les écritures de soi en souffrance, se dénoue sollicitant une réflexion sur les rapports entre les œuvres et les différents contextes sociaux et historiques. Nous pouvons envisager et saisir l’ensemble du corpus et des pratiques considérées en tant que texte social vivant, inscrivant l’expérience de l’existence et du monde dans la pratique de l’écriture. (... Nous allons solliciter et proposer une lecture sociologique et anthropologique de l’ensemble des études proposés au sein du numéro monographique, privilégiant une analyse de la matrice du discours social structurant la conscience individuelle et collective.

Emerging interpretations of quantum mechanics and recent progress in quantum measurement

International Nuclear Information System (INIS)

Clarke, M L

2014-01-01

The focus of this paper is to provide a brief discussion on the quantum measurement process, by reviewing select examples highlighting recent progress towards its understanding. The areas explored include an outline of the measurement problem, the standard interpretation of quantum mechanics, quantum to classical transition, types of measurement (including weak and projective measurements) and newly emerging interpretations of quantum mechanics (decoherence theory, objective reality, quantum Darwinism and quantum Bayesianism). (paper)

New around-the-clock radiology coverage system for the emergency department: a satisfaction survey among clinicians

International Nuclear Information System (INIS)

Choi, Young Hun; Jae, Hwan Jun; Shin, Cheong Il; Song, Su Jin; Cha, Won Cheol; Na, Dong Gyu

2008-01-01

The purpose of this study was to assess the clinician satisfaction of a newly introduced around-the-clock radiology coverage system for the emergency department. Seventeen emergency physicians (8 board certified physicians, 9 residents) were invited to fill out a survey pertaining to the newly introduced radiology coverage system for the emergency department. The questionnaire included 10 questions covering three major topics. The first topic related to the around-the-clock radiology coverage by two full-time radiology residents. The second topic focused on the preliminary interpretations of radiology residents. The last topic included the interpretation assistance system by board-certified radiologists. The answers to each question were assessed using a scoring system of 1 to 5. The mean satisfaction score of the around-the-clock radiology coverage system by the two full-time radiology residents was 4.6 (range 3-5). The mean score for the preliminary interpretation system by the radiology residents was 4.8 (range 4-5). The score for the reliability of the preliminary versus the final interpretation was 4.1 (range 4-5). Lastly, the mean score for the interpretation assistance system by board-certified radiologists was 4.9 (range 4-5). The results of this study indicate a high satisfaction rating among clinicians' of the new around-the-clock radiology coverage system for the emergency department

The impact of organisational culture on the adaptation of newly ...

African Journals Online (AJOL)

Usually newly employed nurses find adjusting to a work setting a challenging experience. Their successful adaptation to their work situation is greatly influenced by the socialisation process inherent in the organisational culture. The newly employed nurse often finds that the norms are unclear, confusing and restrictive.

A trigger mechanism for the emerging flux model of solar flares

International Nuclear Information System (INIS)

Tur, T.J.; Priest, E.R.

1978-01-01

The energetics of a current sheet that forms between newly emerging flux and an ambient field are considered. As more and more flux emerges, so the sheet rises in the solar atmosphere. The various contributions to the thermal energy balance in the sheet approximated and the resulting equation solved for the internal temperature of the sheet. It is found that, for certain choices of the ambient magnetic field strength and velocity, the internal temperature increases until, when the sheet reaches some critical height, no neighbouring equilibrium state exists. The temperature than increases rapidly, seeking a hotter branch of the solution curve. During this dynamic heating the threshold temperature for the onset of plasma microinstabilities may be attained. It is suggested that this may be a suitable trigger mechanism for the recently proposed 'emerging flux' model of a solar flare. (Auth.)

Assessment for markers of nephropathy in newly diagnosed type 2 ...

African Journals Online (AJOL)

Objective: To assess for markers of nephropathy in newly diagnosed type 2 diabetics, using blood pressure levels, endogenous creatinine clearance and urinary protein excretion as markers of renal disease. Study design: Ninety newly diagnosed type 2 diabetics were studied within 6 weeks of diagnosis. They were in ...

Emerging Persistent Organic Pollutants in Chinese Bohai Sea and Its Coastal Regions

Science.gov (United States)

Wang, Yawei; Pan, Yuanyuan

2014-01-01

Emerging persistent organic pollutants (POPs) have widely aroused public concern in recent years. Polybrominated diphenyl ethers (PBDEs) and perfluorooctane sulfonyl fluoride/perfluorooctane sulfonic acid (POSF/PFOS) had been newly listed in Stockholm Convention in 2009, and short chain chlorinated paraffins (SCCPs) and hexabromocyclododecanes (HBCDs) were listed as candidate POPs. Bohai Sea is located in the arms of numbers of industrial cities, the semienclosed location of which makes it an ideal sink of emerging pollutants. In the present paper, latest contamination status of emerging POPs in Bohai Sea was reviewed. According to the literature data, Bohai Sea areas are not heavily contaminated by emerging POPs (PBDE: 0.01–720 ng/g; perfluorinated compounds: 0.1–304 ng/g; SCCPs: 64.9–5510 ng/g; HBCDs: nd-634 ng/g). Therefore, humans are not likely to be under serious risk of emerging POPs exposure through consuming seafood from Bohai Sea. However, the ubiquitous occurrence of emerging POPs in Bohai Sea region might indicate that more work should be done to expand the knowledge about potential risk of emerging POPs pollution. PMID:24688410

Emerging Persistent Organic Pollutants in Chinese Bohai Sea and Its Coastal Regions

Directory of Open Access Journals (Sweden)

Xiaomin Li

2014-01-01

Full Text Available Emerging persistent organic pollutants (POPs have widely aroused public concern in recent years. Polybrominated diphenyl ethers (PBDEs and perfluorooctane sulfonyl fluoride/perfluorooctane sulfonic acid (POSF/PFOS had been newly listed in Stockholm Convention in 2009, and short chain chlorinated paraffins (SCCPs and hexabromocyclododecanes (HBCDs were listed as candidate POPs. Bohai Sea is located in the arms of numbers of industrial cities, the semienclosed location of which makes it an ideal sink of emerging pollutants. In the present paper, latest contamination status of emerging POPs in Bohai Sea was reviewed. According to the literature data, Bohai Sea areas are not heavily contaminated by emerging POPs (PBDE: 0.01–720 ng/g; perfluorinated compounds: 0.1–304 ng/g; SCCPs: 64.9–5510 ng/g; HBCDs: nd-634 ng/g. Therefore, humans are not likely to be under serious risk of emerging POPs exposure through consuming seafood from Bohai Sea. However, the ubiquitous occurrence of emerging POPs in Bohai Sea region might indicate that more work should be done to expand the knowledge about potential risk of emerging POPs pollution.

Possible Influences on the Interpretation of Functional Domain (FD) Near-Infrared Spectroscopy (NIRS): An Explorative Study.

Science.gov (United States)

Celie, Bert M; Boone, Jan; Dumortier, Jasmien; Derave, Wim; De Backer, Tine; Bourgois, Jan G

2016-02-01

The influence of subcutaneous adipose tissue (ATT) and oxygen (O2) delivery has been poorly defined in frequency domain (FD) near-infrared spectroscopy (NIRS). Therefore, the aim of this study was to investigate the possible influence of these variables on all FD NIRS responses using a reliable protocol. Moreover, these influences were also investigated when using relative oxy- and deoxyhemoglobin and -myoglobin (oxy[Hb + Mb] and deoxy[Hb + Mb]) values (in %). A regression analysis was carried out for ATT and maximal-minimum oxy[Hb + Mb], deoxy[Hb + Mb], oxygen saturation (SmO2), and total hemoglobin (totHb) amplitudes during an incremental cyclic contraction protocol (ICCP) in a group of 45 participants. Moreover, the same analysis was carried out between subcutaneous ATT and the relative oxy- and deoxy[Hb + Mb] values (in %). In the second part of this study, a regression analysis was performed for peak forearm blood flow (FBF) during ICCP and the absolute and relative NIRS values in a group of 37 participants. Significant exponential correlation coefficients were found between ATT and deoxy[Hb + Mb] (r = 0.53; P < 0.001), oxy[Hb + Mb] (r = 0.57; P < 0.001), and SmO2 amplitudes (r = 0.57; P < 0.001). No significant relations were found between ATT and relative oxy[Hb + Mb] (r = 0.37; P = 0.07) and deoxy[Hb + Mb] (r = 0.09; P = 0.82). Significant positive correlation coefficients were found between force at exhaustion and maximal FBF (r = 0.66; P < 0.001), maximal differences in deoxy[Hb + Mb] (r = 0.353; P = 0.032) and totHb (r = 0.512; P = 0.002) while no significant correlation coefficients were found between these maximal force values and maximal differences in oxy[Hb + Mb] (r = -0.267; P = 0.111) and SmO2 (r = -0.267; P = 0.111). Significant linear correlation coefficients were found between FBF and deoxy[Hb + Mb] (r = 0.51; P�

14 CFR 26.39 - Newly produced airplanes: Fuel tank flammability.

Science.gov (United States)

2010-01-01

... 14 Aeronautics and Space 1 2010-01-01 2010-01-01 false Newly produced airplanes: Fuel tank... Tank Flammability § 26.39 Newly produced airplanes: Fuel tank flammability. (a) Applicability: This... Series 767 Series (b) Any fuel tank meeting all of the criteria stated in paragraphs (b)(1), (b)(2) and...

Invention de soi et compétences à l’ère des réseaux sociaux

Directory of Open Access Journals (Sweden)

Daniel Apollon

2011-06-01

Full Text Available Les réseaux sociaux en ligne encouragent de nouvelles approches de la compétence centrées sur la construction biographique de l’individu et l’invention de soi. Ce nouvel art de faire des « produsagers », répond au besoin d’inventer une réponse individuelle et collective au sentiment aliénant de vacuité des sociétés post-industrielles et post-traditionnelles. Combinant opposition et soumission aux éléments structurants et aliénants de cette modernité tardive, ces produsagers réactualisent diverses ruses, tactiques et schèmes immémoriaux déjà explorés par divers auteurs avant Internet. Sur cette toile de fond, l’auteur propose une réinterprétation plus large de la notion de compétence.Social media practices encourage new approaches and visions of competence focusing on the construction of individual biography and the "invention of oneself". The new "artful skills" of "produsers" address the need to invent individual and collective responses to the sense of alienating emptiness pervading postindustrial and posttraditional societies. Combining and submission and opposition to both structuring and alienating aspects of late modernity, these produsagers actualize various tricks, tactics and immemorial schemes already mapped by various authors before the Internet. On this backdrop the author proposes a broader reinterpretation of the concept of competence.

Chrysosplenium japonicum (Saxifragaceae, Newly Recorded from Taiwan

Directory of Open Access Journals (Sweden)

Tian-Chuan Hsu

2011-11-01

Full Text Available Chrysosplenium japonicum (Maxim. Makino (Saxifragaceae is newly recorded from northeastern Taiwan. Description, color photos and a key to the Chrysosplenium species in Taiwan are provided.

Being a team leader: newly registered nurses relate their experiences.

Science.gov (United States)

Ekström, Louise; Idvall, Ewa

2015-01-01

This paper presents a study that explores how newly qualified registered nurses experience their leadership role in the ward-based nursing care team. A nurse's clinical leadership affects the quality of care provided. Newly qualified nurses experience difficulties during the transition period from student to qualified professional and find it challenging to lead nursing care. Twelve nurses were interviewed and the transcribed texts analysed using qualitative content analysis to assess both manifest and latent content. Five themes were identified: feeling stranded; forming well-functioning teams; learning to lead; having the courage, strength, and desire to lead; and ensuring appropriate care. The findings indicate that many factors limit nurses' leadership but some circumstances are supportive. The leadership prerequisites for newly registered nurses need to improve, emphasizing different ways to create a supportive atmosphere that promotes professional development and job satisfaction. To increase nurse retention and promote quality of care, nurse managers need to clarify expectations and guide and support newly qualified nurses in a planned way. © 2013 John Wiley & Sons Ltd.

People newly in love are more responsive to positive feedback.

Science.gov (United States)

Brown, Cassandra L; Beninger, Richard J

2012-06-01

Passionate love is associated with increased activity in dopamine-rich regions of the brain. Increased dopamine in these regions is associated with a greater tendency to learn from reward in trial-and-error learning tasks. This study examined the prediction that individuals who were newly in love would be better at responding to reward (positive feedback). In test trials, people who were newly in love selected positive outcomes significantly more often than their single (not in love) counterparts but were no better at the task overall. This suggests that people who are newly in love show a bias toward responding to positive feedback, which may reflect a general bias towards reward-seeking.

A Novel Fully Depleted Air AlN Silicon-on-Insulator Metal-Oxide-Semiconductor Field Effect Transistor

International Nuclear Information System (INIS)

Yuan, Yang; Yong, Gao; Peng-Liang, Gong

2008-01-01

A novel fully depleted air AlN silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistor (MOS-FET) is presented, which can eliminate the self-heating effect and solve the problem that the off-state current of SOI MOSFETs increases and the threshold voltage characteristics become worse when employing a high thermal conductivity material as a buried layer. The simulation results reveal that the lattice temperature in normal SOI devices is 75 K higher than the atmosphere temperature, while the lattice temperature is just 4K higher than the atmosphere temperature resulting in less severe self-heating effect in air AlN SOI MOSFETs and AlN SOI MOSFETs. The on-state current of air AlN SOI MOSFETs is similar to the AlN SOI structure, and improves 12.3% more than that of normal SOI MOSFETs. The off-state current of AlN SOI is 6.7 times of normal SOI MOSFETs, while the counterpart of air AlN SOI MOSFETs is lower than that of SOI MOSFETs by two orders of magnitude. The threshold voltage change of air AlN SOI MOSFETs with different drain voltage is much less than that of AlN SOI devices, when the drain voltage is biased at 0.8 V, this difference is 28mV, so the threshold voltage change induced by employing high thermal conductivity material is cured. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Electric current precedes emergence of a lateral root in higher plants.

Science.gov (United States)

Hamada, S; Ezaki, S; Hayashi, K; Toko, K; Yamafuji, K

1992-10-01

Stable electrochemical patterns appear spontaneously around roots of higher plants and are closely related to growth. An electric potential pattern accompanied by lateral root emergence was measured along the surface of the primary root of adzuki bean (Phaseolus angularis) over 21 h using a microelectrode manipulated by a newly developed apparatus. The electric potential became lower at the point where a lateral root emerged. This change preceded the emergence of the lateral root by about 10 h. A theory is presented for calculating two-dimensional patterns of electric potential and electric current density around the primary root (and a lateral root) using only data on the one-dimensional electric potential measured near the surface of the primary root. The development of the lateral root inside the primary root is associated with the influx of electric current of about 0.7 muA.cm(-2) at the surface.

Workplace Violence and Job Outcomes of Newly Licensed Nurses

OpenAIRE

Chang, Hyoung Eun; Cho, Sung-Hyun

2016-01-01

Purpose: The purpose of this study was to examine the prevalence of workplace violence toward newly licensed nurses and the relationship between workplace violence and job outcomes. Methods: An online survey was conducted of newly licensed registered nurses who had obtained their license in 2012 or 2013 in South Korea and had been working for 5–12 months after first being employed. The sample consisted of 312 nurses working in hospitals or clinics. The Copenhagen Psychosocial Questionnaire...

Emerging drugs for secondary hyperparathyroidism.

Science.gov (United States)

Cozzolino, Mario; Tomlinson, James; Walsh, Liron; Bellasi, Antonio

2015-06-01

Secondary hyperparathyroidism (SHPT), a common, serious, and progressive complication of chronic kidney disease (CKD), is characterized by elevated serum parathyroid hormone (PTH), parathyroid gland hyperplasia, and mineral metabolism abnormalities. These disturbances may result in CKD-mineral and bone disorder (CKD-MBD), which is associated with poor quality of life and short life expectancy. The goal of SHPT treatment is to maintain PTH, calcium, and phosphorus within accepted targeted ranges. This review highlights the pathogenesis of SHPT and current SHPT therapeutic approaches, including the use of low-phosphate diets, phosphate binders, 1,25-dihydroxyvitamin D3 (calcitriol) and its analogs, calcimimetics, and parathyroidectomy in addition to discussing emerging drugs in development for SHPT. Numerous studies indicate that mineral abnormalities occur early in the course of CKD, are prevalent by the time patients enter dialysis, and foreshadow a risk of cardiovascular and all-cause mortality. Several newly developed compounds may potentially overcome the limitations of current SHPT therapies. If emerging therapies can reduce PTH, normalize mineral metabolism, promote treatment adherence, and reduce the risk of side effects, they may provide the requisite features for improving long-term outcomes in patients with SHPT receiving dialysis and reduce the risks of CKD-MBD.

Tropilaelaps mite: an emerging threat to European honey bee.

Science.gov (United States)

Chantawannakul, Panuwan; Ramsey, Samuel; vanEngelsdorp, Dennis; Khongphinitbunjong, Kitiphong; Phokasem, Patcharin

2018-04-01

The risk of transmission of honey bee parasites has increased substantially as a result of trade globalization and technical developments in transportation efficacy. Great concern over honey bee decline has accelerated research on newly emerging bee pests and parasites. These organisms are likely to emerge from Asia as it is the only region where all 10 honey bee species co-occur. Varroa destructor, an ectoparasitic mite, is a classic example of a pest that has shifted from A. cerana, a cavity nesting Asian honey bee to A. mellifera, the European honey bee. In this review, we will describe the potential risks to global apiculture of the global expansion of Tropilaelaps mercedesae, originally a parasite of the open-air nesting Asian giant honey bee, compared to the impact of V. destructor. Copyright © 2018 Elsevier Inc. All rights reserved.

Exercise recommendations in patients with newly diagnosed fibromyalgia.

Science.gov (United States)

Wilson, Brad; Spencer, Horace; Kortebein, Patrick

2012-04-01

To evaluate exercise recommendations in patients newly diagnosed with fibromyalgia. A retrospective chart review. A public university rheumatology clinic. Patients newly diagnosed with fibromyalgia (N = 122). Frequency and type of exercise recommendations. The mean (standard deviation) age of these patients with fibromyalgia was 45 ± 12 years; 91% were women. Exercise was recommended as part of the documented treatment plan in 47% of these patients (57/122); only 3 patients had a documented contraindication for exercise. Aquatic exercise was most frequently recommended (56% [32/57]), followed by combined aquatic-aerobic exercise (26% [15/57]), and, infrequently, aerobic exercise only (5% [3/57]); only 7% of these patients (4/57) were referred for physical therapy. The primary method of communication was verbal discussion (94% [54/57]). Although there is well-documented evidence that exercise is beneficial for patients with fibromyalgia, we found that less than half of patients with newly diagnosed fibromyalgia in our study were provided recommendations to initiate an exercise program as part of their treatment plan. Further investigation of these findings are warranted, including evaluation of other university and community rheumatology practices as well as that of other physicians caring for patients with fibromyalgia. However, our findings indicate that there appears to be an opportunity to provide more specific and practical education regarding the implementation of an exercise regimen for patients with newly diagnosed fibromyalgia. Physiatrists may be particularly well suited to manage the exercise component of patients with fibromyalgia because of their specialized training in exercise prescription. Copyright © 2012 American Academy of Physical Medicine and Rehabilitation. Published by Elsevier Inc. All rights reserved.

110 GHz hybrid mode-locked fiber laser with enhanced extinction ratio based on nonlinear silicon-on-insulator micro-ring-resonator (SOI MRR)

International Nuclear Information System (INIS)

Liu, Yang; Hsu, Yung; Chow, Chi-Wai; Yang, Ling-Gang; Lai, Yin-Chieh; Yeh, Chien-Hung; Tsang, Hon-Ki

2016-01-01

We propose and experimentally demonstrate a new 110 GHz high-repetition-rate hybrid mode-locked fiber laser using a silicon-on-insulator microring-resonator (SOI MRR) acting as the optical nonlinear element and optical comb filter simultaneously. By incorporating a phase modulator (PM) that is electrically driven at a fraction of the harmonic frequency, an enhanced extinction ratio (ER) of the optical pulses can be produced. The ER of the optical pulse train increases from 3 dB to 10 dB. As the PM is only electrically driven by the signal at a fraction of the harmonic frequency, in this case 22 GHz (110 GHz/5 GHz), a low bandwidth PM and driving circuit can be used. The mode-locked pulse width and the 3 dB spectral bandwidth of the proposed mode-locked fiber laser are measured, showing that the optical pulses are nearly transform limited. Moreover, stability evaluation for an hour is performed, showing that the proposed laser can achieve stable mode-locking without the need for optical feedback or any other stabilization mechanism. (letter)

The future of emerging disease

International Nuclear Information System (INIS)

Debell, R. M.

2009-01-01

A recent study has demonstrated that the numbers of emerging infectious diseases has risen dramatically since 1940. Two processes are responsible: microbial adaptation that results in human infection and human exposure to newly adapted microbes that occurs for several reasons including increased human intrusion into tropical forests, lack of access to health care, population growth and changes in demographics, inadequate and deteriorating public health infrastructure, misuse of antimicrobial drugs, urbanization and crowding, modern travel, and increased trade and expanded markets for imported foods. For more than 40 years, methicillin-resistant Staphylococcus aureus (MRSA) has been almost impossible to treat. In a recent worldwide study, 54.3 percent of emerging bacterial infections resulted from drug adaptation resistance. Serious diarrheal infections caused by Escherichia coli O157:H7 have become frequent in the U.S. From May 27th to July 1st, 2008, 49 infections occurred in the U.S., and 27 were hospitalized. From its inception in 2003, SARS has resulted in more than 8000 cases and 774 deaths. In 1999, West Nile virus appeared initially in New York City. By 2004 this virus was found in birds and mosquitoes in 48 states and by 2007 in the U.S., there were 3,630 cases including 124 deaths. Before December 1st, 1981, no one ever heard of HIV. It is estimated that 25 million people have died of AIDS. Each emergent disease has its own history of recognition, spread, and severity. Through this review, the future of emergent disease is characterized as highly dependent upon the convergence of human exposures in a modern world and microbial adaptation.(author)

A rugged 650 V SOI-based high-voltage half-bridge IGBT gate driver IC for motor drive applications

Science.gov (United States)

Hua, Qing; Li, Zehong; Zhang, Bo; Chen, Weizhong; Huang, Xiangjun; Feng, Yuxiang

2015-05-01

This paper proposes a rugged high-voltage N-channel insulated gate bipolar transistor (IGBT) gate driver integrated circuit. The device integrates a high-side and a low-side output stages on a single chip, which is designed specifically for motor drive applications. High-voltage level shift technology enables the high-side stage of this device to operate up to 650 V. The logic inputs are complementary metal oxide semiconductor (CMOS)/transistor transistor logic compatible down to 3.3 V. Undervoltage protection functionality with hysteresis characteristic has also been integrated to enhance the device reliability. The device is fabricated in a 1.0 μm, 650 V high-voltage bipolar CMOS double-diffused metal oxide semiconductor (BCD) on silicon-on-insulator (SOI) process. Deep trench dielectric isolation technology is employed to provide complete electrical isolation with advantages such as reduced parasitic effects, excellent noise immunity and low leakage current. Experimental results show that the isolation voltage of this device can be up to approximately 779 V at 25°C, and the leakage current is only 5 nA at 650 V, which is 15% higher and 67% lower than the conventional ones. In addition, it delivers an excellent thermal stability and needs very low quiescent current and offers a high gate driver capability which is needed to adequately drive IGBTs that have large input capacitances.

Nilotinib versus imatinib for newly diagnosed chronic myeloid leukemia

DEFF Research Database (Denmark)

Saglio, Giuseppe; Kim, Dong-Wook; Issaragrisil, Surapol

2010-01-01

Nilotinib has been shown to be a more potent inhibitor of BCR-ABL than imatinib. We evaluated the efficacy and safety of nilotinib, as compared with imatinib, in patients with newly diagnosed Philadelphia chromosome-positive chronic myeloid leukemia (CML) in the chronic phase.......Nilotinib has been shown to be a more potent inhibitor of BCR-ABL than imatinib. We evaluated the efficacy and safety of nilotinib, as compared with imatinib, in patients with newly diagnosed Philadelphia chromosome-positive chronic myeloid leukemia (CML) in the chronic phase....

Transformation of organic N newly added to red soil treated with different cultural practices

Institute of Scientific and Technical Information of China (English)

ZhangQin－Zheng; YeQing－Fu; 等

1998-01-01

By using 15N tracer method,transformation of organic N,which wqas newly added to red soil treated with different cultural practices,was studied under thelaboratory incubation condition.The experimental results showed that the transformation of N from newly added organic matter and soil native pool during incubation was influenced by cultural practice treatment beforeincubation.Fallow was favorable to the mineralization of newly added organic N and soil N compared with the planting wheat treatment.Planting wheat greatly increased the loss of soil N.Application of fertilizers stimulated the mineralization of newly added organic N and application of organic matter reduced the mineralization,but stimulated microbialtransformation of newly adde4d organic N.

Using artificial intelligence and web media data to evaluate the growth potential of companies in emerging industry sectors

DEFF Research Database (Denmark)

Tanev, Stoyan; Droll, Andrew; Khan, Shahzad

2017-01-01

In this article, we describe our efforts to adapt and validate a web search and analytics tool – the Gnowit Cognitive Insight Engine – to evaluate the growth and competitive potential of new technology startups and existing firms in the newly emerging precision medicine sector. The results are ba...

Space and military radiation effects in silicon-on-insulator devices

International Nuclear Information System (INIS)

Schwank, J.R.

1996-09-01

Advantages in transient ionizing and single-event upset (SEU) radiation hardness of silicon-on-insulator (SOI) technology spurred much of its early development. Both of these advantages are a direct result of the reduced charge collection volume inherent to SOI technology. The fact that SOI transistor structures do not include parasitic n-p-n-p paths makes them immune to latchup. Even though considerable improvement in transient and single-event radiation hardness can be obtained by using SOI technology, there are some attributes of SOI devices and circuits that tend to limit their overall hardness. These attributes include the bipolar effect that can ultimately reduce the hardness of SOI ICs to SEU and transient ionizing radiation, and charge buildup in buried and sidewall oxides that can degrade the total-dose hardness of SOI devices. Nevertheless, high-performance SOI circuits can be fabricated that are hardened to both space and nuclear radiation environments, and radiation-hardened systems remain an active market for SOI devices. The effects of radiation on SOI MOS devices are reviewed

Trends in Video Game Play through Childhood, Adolescence, and Emerging Adulthood

Directory of Open Access Journals (Sweden)

Geoffrey L. Ream

2013-01-01

Full Text Available This study explored the relationship between video gaming and age during childhood, adolescence, and emerging adulthood. It also examined whether “role incompatibility,” the theory that normative levels of substance use decrease through young adulthood as newly acquired adult roles create competing demands, generalizes to video gaming. Emerging adult video gamers (n=702 recruited from video gaming contexts in New York City completed a computer-assisted personal interview and life-history calendar. All four video gaming indicators—days/week played, school/work day play, nonschool/work day play, and problem play—had significant curvilinear relationships with age. The “shape” of video gaming’s relationship with age is, therefore, similar to that of substance use, but video gaming appears to peak earlier in life than substance use, that is, in late adolescence rather than emerging adulthood. Of the four video gaming indicators, role incompatibility only significantly affected school/work day play, the dimension with the clearest potential to interfere with life obligations.

Trends in Video Game Play through Childhood, Adolescence, and Emerging Adulthood.

Science.gov (United States)

Ream, Geoffrey L; Elliott, Luther C; Dunlap, Eloise

2013-01-01

This study explored the relationship between video gaming and age during childhood, adolescence, and emerging adulthood. It also examined whether "role incompatibility," the theory that normative levels of substance use decrease through young adulthood as newly acquired adult roles create competing demands, generalizes to video gaming. Emerging adult video gamers (n = 702) recruited from video gaming contexts in New York City completed a computer-assisted personal interview and life-history calendar. All four video gaming indicators-days/week played, school/work day play, nonschool/work day play, and problem play-had significant curvilinear relationships with age. The "shape" of video gaming's relationship with age is, therefore, similar to that of substance use, but video gaming appears to peak earlier in life than substance use, that is, in late adolescence rather than emerging adulthood. Of the four video gaming indicators, role incompatibility only significantly affected school/work day play, the dimension with the clearest potential to interfere with life obligations.

Molecular detection of HIV-1 subtype B, CRF01_AE, CRF33_01B, and newly emerging recombinant lineages in Malaysia.

Science.gov (United States)

Chook, Jack Bee; Ong, Lai Yee; Takebe, Yutaka; Chan, Kok Gan; Choo, Martin; Kamarulzaman, Adeeba; Tee, Kok Keng

2015-03-01

A molecular genotyping assay for human immunodeficiency virus type 1 (HIV-1) circulating in Southeast Asia is difficult to design because of the high level of genetic diversity. We developed a multiplex real-time polymerase chain reaction (PCR) assay to detect subtype B, CRF01_AE, CRF33_01B, and three newly described circulating recombinant forms, (CRFs) (CRF53_01B, CRF54_01B, and CRF58_01B). A total of 785 reference genomes were used for subtype-specific primers and TaqMan probes design targeting the gag, pol, and env genes. The performance of this assay was compared and evaluated with direct sequencing and phylogenetic analysis. A total of 180 HIV-infected subjects from Kuala Lumpur, Malaysia were screened and 171 samples were successfully genotyped, in agreement with the phylogenetic data. The HIV-1 genotype distribution was as follows: subtype B (16.7%); CRF01_AE (52.8%); CRF33_01B (24.4%); CRF53_01B (1.1%); CRF54_01B (0.6%); and CRF01_AE/B unique recombinant forms (4.4%). The overall accuracy of the genotyping assay was over 95.0%, in which the sensitivities for subtype B, CRF01_AE, and CRF33_01B detection were 100%, 100%, and 97.7%, respectively. The specificity of genotyping was 100%, inter-subtype specificities were > 95% and the limit of detection of 10(3) copies/mL for plasma. The newly developed real-time PCR assay offers a rapid and cost-effective alternative for large-scale molecular epidemiological surveillance for HIV-1. © The American Society of Tropical Medicine and Hygiene.

Revision of criteria for foodstuffs control following a nuclear or radiological emergency

Energy Technology Data Exchange (ETDEWEB)

Park, Sang Hyun; Lee, Young Min; Jeong, Seung Young [Korea Institute of Nuclear Safety, Daejeon (Korea, Republic of)

2015-10-15

GAL(generic action level)s were derived using cost-benefit methods. But the factors used to derive GALs, such as Gross National Product (GNP) and cost of foodstuff, have been changed for last 10 years. Moreover the standards did not consider exposure situation change from emergency exposure to existing exposure situation. In this study, two ways to revise existing standards for foodstuff control were considered; 1st, revision of GAL, 2nd, newly derived reference level. In this study, two methods to revise food control criteria following nuclear emergency were suggested. GAL based on recent GNI and cost of foodstuff would be revised and decreased up to 30 % than existing criteria. DRLs reflecting exposure situation and consumption pattern were smaller than existing criteria for group 1 nuclides. The approach considered in the study would be applied to set up domestic criteria for food control during and following nuclear or radiological emergency.

Revision of criteria for foodstuffs control following a nuclear or radiological emergency

International Nuclear Information System (INIS)

Park, Sang Hyun; Lee, Young Min; Jeong, Seung Young

2015-01-01

GAL(generic action level)s were derived using cost-benefit methods. But the factors used to derive GALs, such as Gross National Product (GNP) and cost of foodstuff, have been changed for last 10 years. Moreover the standards did not consider exposure situation change from emergency exposure to existing exposure situation. In this study, two ways to revise existing standards for foodstuff control were considered; 1st, revision of GAL, 2nd, newly derived reference level. In this study, two methods to revise food control criteria following nuclear emergency were suggested. GAL based on recent GNI and cost of foodstuff would be revised and decreased up to 30 % than existing criteria. DRLs reflecting exposure situation and consumption pattern were smaller than existing criteria for group 1 nuclides. The approach considered in the study would be applied to set up domestic criteria for food control during and following nuclear or radiological emergency

Combined multi-distance frequency domain and diffuse correlation spectroscopy system with simultaneous data acquisition and real-time analysis.

Science.gov (United States)

Carp, Stefan A; Farzam, Parisa; Redes, Norin; Hueber, Dennis M; Franceschini, Maria Angela

2017-09-01

Frequency domain near infrared spectroscopy (FD-NIRS) and diffuse correlation spectroscopy (DCS) have emerged as synergistic techniques for the non-invasive assessment of tissue health. Combining FD-NIRS oximetry with DCS measures of blood flow, the tissue oxygen metabolic rate can be quantified, a parameter more closely linked to underlying physiology and pathology than either NIRS or DCS estimates alone. Here we describe the first commercially available integrated instrument, called the "MetaOx", designed to enable simultaneous FD-NIRS and DCS measurements at rates of 10 + Hz, and offering real-time data evaluation. We show simultaneously acquired characterization data demonstrating performance equivalent to individual devices and sample in vivo measurements of pulsation resolved blood flow, forearm occlusion hemodynamic changes and muscle oxygen metabolic rate monitoring during stationary bike exercise.

Possible origin of Saturn's newly discovered outer ring

International Nuclear Information System (INIS)

Moehlmann, D.

1986-01-01

Within a planetogonic model the self-gravitationally caused formation of pre-planetary and pre-satellite rings from an earlier thin disk is reported. The theoretically derived orbital radii of these rings are compared with the orbital levels in the planetary system and the satellite systems of Jupiter, Saturn and Uranus. From this comparison it is concluded that at the radial position of Saturn's newly discovered outer ring an early pre-satellite ring of more or less evolved satellites could have existed. These satellites should have been disturbed in their evolution by the gravitation of the neighbouring massive satellite Titan. The comparison also may indicate similarities between the asteroidal belt and the newly discovered outer ring of Saturn

Oral Cancer Knowledge Assessment: Newly Graduated versus Senior Dental Clinicians

Science.gov (United States)

Salgado de Souza, Ricardo; Gallego Arias Pecorari, Vanessa; Lauria Dib, Luciano

2018-01-01

The present study assessed the level of dentists' knowledge regarding oral cancer in the city of São Paulo, Brazil. A questionnaire was used to compare the level of knowledge among newly graduated and senior clinicians. A total of 20,154 e-mails were correctly delivered to the dentists registered in the database of the Regional Dentistry Council of São Paulo, and 477 (2.36%) responses were received. This sample consisted of 84 newly graduated clinicians and 105 senior clinicians. For the statistical analysis, the chi-square test and the logistic regression analysis were performed with α = 0.05, and the results were described herein. According to their knowledge level, the results were statistically different between the groups, since 19% of the newly graduated clinicians were evaluated with knowledge grade A (excellent) in comparison to 6.7% of the senior clinicians. In spite of the results indicated that newly graduated clinicians' knowledge regarding oral cancer was 2.1 times higher, 34.5% of the professionals in this group had regular or poor knowledge on the subject, and several questions relating to clinical characteristics and risk factors indicated that there still exist some knowledge gaps, demonstrating that there is a need for further studies and information activities addressing oral cancer. PMID:29666649

Newly qualified teachers' visions of science learning and teaching

Science.gov (United States)

Roberts, Deborah L.

2011-12-01

This study investigated newly qualified teachers' visions of science learning and teaching. The study also documented their preparation in an elementary science methods course. The research questions were: What educational and professional experiences influenced the instructor's visions of science learning and teaching? What visions of science learning and teaching were promoted in the participants' science methods course? What visions of science learning and teaching did these newly qualified teachers bring with them as they graduated from their teacher preparation program? How did these visions compare with those advocated by reform documents? Data sources included participants' assignments, weekly reflections, and multi-media portfolio finals. Semi-structured interviews provided the emic voice of participants, after graduation but before they had begun to teach. These data were interpreted via a combination of qualitative methodologies. Vignettes described class activities. Assertions supported by excerpts from participants' writings emerged from repeated review of their assignments. A case study of a typical participant characterized weekly reflections and final multi-media portfolio. Four strands of science proficiency articulated in a national reform document provided a framework for interpreting activities, assignments, and interview responses. Prior experiences that influenced design of the methods course included an inquiry-based undergraduate physics course, participation in a reform-based teacher preparation program, undergraduate and graduate inquiry-based science teaching methods courses, participation in a teacher research group, continued connection to the university as a beginning teacher, teaching in diverse Title 1 schools, service as the county and state elementary science specialist, participation in the Carnegie Academy for the Scholarship of Teaching and Learning, service on a National Research Council committee, and experience teaching a

Meeting and activating the newly unemployed

DEFF Research Database (Denmark)

Rotger, Gabriel Pons

-demanding activity. As intensive activation is usually accompanied by intensive search monitoring, it is important to disentangling the contribution of the costly activation programs from that of caseworker meetings. Using Danish data for the period 2010-13, the paper shows that requiring newly unemployed intensive...... activation, contrary to job search meetings, reduces employment and increases sickness benefit claims....

Long-Range Emergency Preemption of Traffic Lights

Science.gov (United States)

Bachelder, Aaron

2005-01-01

A forwarding system could prove beneficial as an addition to an electronic communication-and-control system that automatically modifies the switching of traffic lights to give priority to emergency vehicles. A system to which the forwarding system could be added could be any of a variety of emergency traffic-signal-preemption systems: these include systems now used in some municipalities as well as advanced developmental systems described in several NASA Tech Briefs articles in recent years. Because of a variety of physical and design limitations, emergency traffic-signal- preemption systems now in use are often limited in range to only one intersection at a time: in a typical system, only the next, closest intersection is preempted for an emergency vehicle. Simulations of gridlock have shown that such systems offer minimal advantages and can even cause additional delays. In analogy to what happens in fluid dynamics, the forwarding system insures that flow at a given location is sustained by guaranteeing downstream flow along the predicted route (typically a main artery) and intersecting routes (typically, side streets). In simplest terms, the forwarding system starts by taking note of any preemption issued by the preemption system to which it has been added. The forwarding system predicts which other intersections could be encountered by the emergency vehicle downstream of the newly preempted intersection. The system then forwards preemption triggers to those intersections. Beyond affording a right of way for the emergency vehicle at every intersection that lies ahead along any likely route from the current position of the vehicle, the forwarding system also affords the benefit of clearing congested roads far ahead of the vehicle. In a metropolitan environment with heavy road traffic, forwarding of preemption triggers could greatly enhance the performance of a pre-existing preemption system.

Healthcare professionals' views of group structured education for people with newly diagnosed Type 2 diabetes.

Science.gov (United States)

Winkley, K; Upsher, R; Keij, S M; Chamley, M; Ismail, K; Forbes, A

2018-04-06

To determine healthcare professionals' (HCP) views of group structured education for people with newly diagnosed Type 2 diabetes. This was a qualitative study using semi-structured interviews to ascertain primary care HCPs' views and experiences of education for people with newly diagnosed Type 2 diabetes. A thematic framework method was applied to analyse the data. Participants were HCPs (N = 22) from 15 general practices in three south London boroughs. All but one HCP viewed diabetes education favourably and all identified that low attendance was a problem. Three key themes emerged from the qualitative data: (1) benefits of diabetes education, including the group mode of delivery, improved patient interactions, saving HCPs' time and improved patient outcomes; (2) factors limiting uptake of education, including patient-level problems such as access and the appropriateness of the programme for certain groups, and difficulties communicating the benefits to patients and integration of education management plans into ongoing diabetes care; and (3) suggestions for improvement, including strategies to improve attendance at education with more localized and targeted marketing and enhanced programme content including follow-up sessions and support for people with pre-existing psychological issues. Most HCPs valued diabetes education and all highlighted the lack of provision for people with different levels of health literacy. Because there was wide variation in terms of the level of knowledge regarding the education on offer, future studies may want to focus on how to help HCPs encourage their patients to attend. © 2018 Diabetes UK.

Single Versus Multiple Solid Organ Injuries Following Blunt Abdominal Trauma.

Science.gov (United States)

El-Menyar, Ayman; Abdelrahman, Husham; Al-Hassani, Ammar; Peralta, Ruben; AbdelAziz, Hiba; Latifi, Rifat; Al-Thani, Hassan

2017-11-01

We aimed to describe the pattern of solid organ injuries (SOIs) and analyze the characteristics, management and outcomes based on the multiplicity of SOIs. A retrospective study in a Level 1 trauma center was conducted and included patients admitted with blunt abdominal trauma between 2011 and 2014. Data were analyzed and compared for patients with single versus multiple SOIs. A total of 504 patients with SOIs were identified with a mean age of 28 ± 13 years. The most frequently injured organ was liver (45%) followed by spleen (30%) and kidney (18%). One-fifth of patients had multiple SOIs, of that 87% had two injured organs. Patients with multiple SOIs had higher frequency of head injury and injury severity scores (p hepatic injuries (13%) than the other SOIs. SOIs represent one-tenth of trauma admissions in Qatar. Although liver was the most frequently injured organ, the rate of mortality was higher in pancreatic injury. Patients with multiple SOIs had higher morbidity which required frequent operative management. Further prospective studies are needed to develop management algorithm based on the multiplicity of SOIs.

Clinical heterogeneity in newly diagnosed Parkinson's disease

NARCIS (Netherlands)

Post, Bart; Speelman, Johannes D.; de Haan, Rob J.

2008-01-01

OBJECTIVE: To determine clinical heterogeneity in newly diagnosed Parkinson's disease using cluster analysis and to describe the subgroups in terms of impairment, disability, perceived quality of life, and use of dopaminergic therapy. METHODS: We conducted a k-means cluster analysis in a prospective