WorldWideScience

Sample records for net deposit growth

  1. Linking net entry to regional economic growth

    NARCIS (Netherlands)

    M.A.F.G. Dejardin (Marcus)

    2011-01-01

    textabstractRegional growth differentials could be explained by how intensively and dynamically new firms of a particular region enter expanding industries. Although the direct contribution of new firms to value creation and growth may be regarded as tautological, the aggregate impacts are largely

  2. Inclusive Growth: More than Safety Nets

    International Development Research Centre (IDRC) Digital Library (Canada)

    IDRC CRDI

    caused that crisis and remain responsible for persistent deprivation continue to exist. 2. The need to find policies that ... debate, including questions of definition, and global challenges to address inclusive growth effectively. 4 Earlier origins of the ... debates, often with (youth) unemployment as a key concern. 12 According to ...

  3. Elevated Nitrogen Deposition Enhances the Net CO2 Sink Strength in Alberta Bogs along a Post-fire Chronosequence

    Science.gov (United States)

    Wieder, R. K.; Vile, M. A.; Albright, C. M.; Scott, K. D.

    2014-12-01

    About 30% of the landscape of northern Alberta, Canada is occupied by peatlands, which persist at the low end range of both mean annual precipitation (pattern emerged that N additions enhanced the net CO2 sink strength of the bogs, with no effect on ecosystem respiration. Net primary production of Sphagnum fuscum, the dominant peat-forming moss, was not affected by N addition, suggesting that the overall response of NEE to N addition is the result of enhanced growth of ericaceous shrubs. These findings suggest that while elevated N deposition in the AOSR may enhance the strength of the overall CO2 sink of bogs in the short term, in the longer term, increased shrub growth has the potential to shade Sphagnum mosses, compromising the future bog CO2sink strength across the region.

  4. Monitoring particle growth in deposition plasmas

    Science.gov (United States)

    Schlebrowski, T.; Bahre, H.; Böke, M.; Winter, J.

    2013-12-01

    Plasma-enhanced chemical vapor deposition methods are frequently used to deposit barrier layers, e.g. on polymers for food packaging. These plasmas may suffer from particle (dust) formation. We report on a flexible monitoring system for dust. It is based on scanning a 3D plasma volume for particles by laser light scattering. The lower size limit of particles detected in the presented system is 20 nm. We report on existence diagrams for obtaining dust free or dust loaded capacitively or inductively coupled rf-plasmas in C2H2 depending on pressure, flow and rf-power. We further present growth rates for dust in these plasmas and show that monodisperse particles are only obtained during the first growth cycle.

  5. Effect of dietary net energy concentrations on growth performance and net energy intake of growing gilts.

    Science.gov (United States)

    Lee, Gang Il; Kim, Jong Hyuk; Han, Gi Ppeum; Koo, Do Yoon; Choi, Hyeon Seok; Kil, Dong Yong

    2017-09-01

    This experiment investigated the effect of dietary net energy (NE) concentrations on growth performance and NE intake of growing gilts. Five diets were formulated to contain 9.6, 10.1, 10.6, 11.1, and 11.6 MJ NE/kg, respectively. A metabolism trial with 10 growing pigs (average body weight [BW] = 15.9±0.24 kg) was conducted to determine NE concentrations of 5 diets based on French and Dutch NE systems in a 5×5 replicated Latin square design. A growth trial also was performed with five dietary treatments and 12 replicates per treatment using 60 growing gilts (average BW = 15.9±0.55 kg) for 28 days. A regression analysis was performed to predict daily NE intake from the BW of growing gilts. Increasing NE concentrations of diets did not influence average daily gain and average daily feed intake of growing gilts. There was a quadratic relationship (p = 0.01) between dietary NE concentrations and feed efficiency (G:F), although the difference in G:F among treatment means was relatively small. Regression analysis revealed that daily NE intake was linearly associated with the BW of growing gilts. The prediction equations for NE intake with the BW of growing gilts were: NE intake (MJ/d) = 1.442+(0.562×BW, kg), R 2 = 0.796 when French NE system was used, whereas NE intake (MJ/d) = 1.533+(0.614×BW, kg), R 2 = 0.810 when Dutch NE system was used. Increasing NE concentrations of diets from 9.6 to 11.6 MJ NE/kg have little impacts on growth performance of growing gilts. Daily NE intake can be predicted from the BW between 15 and 40 kg in growing gilts.

  6. Imposed layer by layer growth by pulsed laser interval deposition

    NARCIS (Netherlands)

    Koster, Gertjan; Rijnders, Augustinus J.H.M.; Blank, David H.A.; Rogalla, Horst

    1999-01-01

    Pulsed laser deposition has become an important technique to fabricate novel materials. Although there is the general impression that, due to the pulsed deposition, the growth mechanism differs partially from continuous physical and chemical deposition techniques, it has hardly been used. Here, we

  7. Epitaxial Growth of Silicon Carbide by Chemical Vapor Deposition

    Science.gov (United States)

    Bhat, Ishwara B.

    The properties of silicon carbide materials are first reviewed, with special emphasis on properties related to power device applications. Epitaxial growth methods for SiC are then discussed with emphasis on recent results for epitaxial growth by the hot-wall chemical vapor deposition method. The growth mechanism for maintaining the polytype, namely step-controlled epitaxy, is discussed. Also described is the selective epitaxial growth carried out on SiC at the author's laboratory, including some unpublished work.

  8. Initial growth of Bauhinia variegata trees under different colored shade nets and light conditions

    Directory of Open Access Journals (Sweden)

    Renata Bachin Mazzini-Guedes

    2014-12-01

    Full Text Available Bauhinia variegata and B. variegata var. candida, commonly known as orchid trees, are small sized trees widely used for urban forestry and landscaping. Adult plants grow under full sun; in Brazil, however, seedlings are generally cultivated in commercial nurseries under natural half-shading. The objective of this study was to evaluate the influence of different colored shade nets and light conditions on the initial growth of B. variegata and B. variegata var. candida. The influence of six light conditions (red net with 50% shading; blue net with 50% shading; black net with 70% shading; black net with 50% shading; black net with 30% shading; and full sun on the initial growth of B. variegata and B. variegata var. candida were evaluated along 160 days, and growth relationships were calculated. Seedlings showed more efficiency on the use of photoassimilated compounds when grown under full sun. Such condition is the most appropriate for seedling production of B. variegata and B. variegata var. candida, contradicting what has been performed in practice.

  9. Why Net Domestic Product Should Replace Gross Domestic Product as a Measure of Economic Growth

    OpenAIRE

    Roland Spant

    2003-01-01

    In the third article, Roland Spant, a Swedish trade union economist, argues that Net Domestic Product (NDP) should replace GDP as a measure of economic growth for a number of purposes. The key difference between GDP and NDP is depreciation. With the shift in investment toward information technology assets with relatively short service lives, the share of depreciation in GDP has increased in most OECD countries and GDP growth now exceeds NDP growth. Spant points out that this means that the us...

  10. Net mineral requirements for growth of Saanen goat kids in early life are similar among genders.

    Science.gov (United States)

    Mendonça, A N; Härter, C J; Souza, S F; Oliveira, D; Boaventura Neto, O; Biagioli, B; Resende, K T; Teixeira, I A M A

    2017-02-01

    The current mineral requirements for growing goat kids are based on sheep and cattle studies without differentiating between the stages of development or gender. The aims of this study were to determine the net requirements for growth of Ca, P, Mg, Na and K of Saanen goat kids during the initial stages of growth and to analyse the effect of gender on the net requirements for growth of these macrominerals. Eighteen female, 19 intact male and 10 castrated male Saanen goat kids were studied. The kids were selected applying a completely randomized design and slaughtered when their body weight (BW) reached approximately 5, 10 and 15 kg to determine the mineral requirements for growth at these stages. The net mineral requirements for growth were similar among genders. The goat kids had slightly increased net requirements of Ca, P and Mg for growth with increasing BW from 5 to 15 kg. The net requirements for growth of Ca, P, Mg, Na and K ranged from 9.61 to 9.67 g/kg of BW gain, 7.14 to 7.56 g/kg of BW gain, 0.34 to 0.37 g/kg of BW gain, 1.26 to 1.13 g/kg of BW gain, 1.88 to 1.82 g/kg of BW gain as the animals grew from 5 to 15 kg respectively. In conclusion, when formulating diets for Saanen goat kids in early growth stage mineral levels do not need to adjusted based on gender. Journal of Animal Physiology and Animal Nutrition © 2016 Blackwell Verlag GmbH.

  11. The in situ growth of 3D net-like CNTs on C fiber

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Junfeng, E-mail: majunfeng01@sina.cn; Lan, Xuena; Niu, Bingbing; Fan, Dongxiao

    2017-05-01

    Carbon nanotubes (CNTs) with 3 dimensional net-like structure were perfectly grown on C fiber at ambient temperature and pressure using a modified electrochemical process, and their composition and morphology were characterized by Raman spectroscopy, Energy dispersive spectroscopy (EDS), High resolution transmission electron microscopy (HRTEM), and Scanning electron microscopy (SEM), respectively. This paper also reported the influence of applied voltage and reaction time on the formation and growth of CNTs, and proposed a possible growth mechanism. - Highlights: • CNTs with 3D net-like structure were grown on C fiber by an “electrochemical” route. • The formation and growth of CNTs relied on applied voltage and reaction time. • A possible growth mechanism was proposed.

  12. Growth modes of pentacene films obtained by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Wisz, G., E-mail: gwisz@univ.rzeszow.pl [Institute of Physics, University of Rzeszow, Rejtana 16a, 35-309 Rzeszow (Poland); Kuzma, M.; Virt, I.; Sagan, P. [Institute of Physics, University of Rzeszow, Rejtana 16a, 35-309 Rzeszow (Poland); Rudyj, I. [Lviv University of Technology, Bandery 12, 90-646 Lviv (Ukraine)

    2011-04-01

    Thin pentacene films were deposited on KCl and ITO/glass substrates by the pulsed laser deposition method (PLD) using a YAG:Nd{sup 3+} laser with a second harmonic ({lambda} = 532 nm). We compared the structure of the layer on differently oriented substrates with respect to the pentacene plasma plume - vertical and parallel orientation. The structure of the layers formed was examined using SEM, RHEED and THEED methods. The lattice parameters of the layer deposited on KCl were determined from THEED pattern (a = 5.928 A, b 7.874 A, c = 14,98 A, {alpha} = 76.54{sup o}, {beta} 75.17{sup o}, {gamma} = 89.20{sup o}). The preferred direction [11-bar 0] of the layer growth on KCl substrate was addressed. The effect of the substrate orientation results in a different growth mode of the layers.

  13. Calculation of growth per cycle (GPC) of atomic layer deposited ...

    Indian Academy of Sciences (India)

    2014-03-06

    Mar 6, 2014 ... Calculation of growth per cycle (GPC) of atomic layer deposited aluminium oxide nanolayers and dependence of GPC on surface OH concentration. ANU PHILIP, SUBIN THOMAS and K RAJEEV KUMAR*. Department of Instrumentation, Cochin University of Science and Technology,. Cochin 682 022, India.

  14. Calculation of growth per cycle (GPC) of atomic layer deposited ...

    Indian Academy of Sciences (India)

    Home; Journals; Pramana – Journal of Physics; Volume 82; Issue 3. Calculation of growth per cycle (GPC) of atomic layer deposited aluminium oxide nanolayers and dependence of GPC on surface OH concentration. Anu Philip Subin Thomas K Rajeev Kumar. Research Articles Volume 82 Issue 3 March 2014 pp 563-569 ...

  15. Deposit growth and property development in coal-fired furnaces

    Energy Technology Data Exchange (ETDEWEB)

    Baxter, L. [Sandia National Lab., Livermore, CA (United States)

    1995-11-01

    The objectives of this research project are: (1) to provide a self-consistent database of simultaneously measured, time-resolved ash deposit properties in well-controlled and well-defined environments and (2) to provide analytical expressions that relate deposit composition and structure to deposit properties of immediate relevance to PETC`s Combustion 2000 program. This project is distinguished from related work being done elsewhere by: (1) the development and deployment of in-situ diagnostics to monitor deposit properties, including heat transfer coefficients, porosity, emissivity, tenacity, strength, density, and viscosity; (2) the time resolution of such properties during deposit growth; (3) simultaneous measurement of structural and composition properties; (4) development of algorithms from a self-consistent, simultaneously measured database that includes the interdependence of properties; and (5) application of the results to technologically relevant environments such as those being planned under Combustion 2000 program. Work completed during FY94 emphasized diagnostic development. During FY95, this development work will be completed and we will emphasize application of the diagnostics to meet the other project objectives. Included in this work are the development and application of two in-situ, real-time diagnostic systems for monitoring the properties of inorganic materials on Heat transfer surfaces and in the gas-phase during controlled combustion of selected coal samples in Sandia`s Multifuel Combustor (MFC). Also, several diagnostics are being incorporated into the MFC that will eventually be used to characterize ash deposit properties.

  16. Photosynthetic behavior, growth and essential oil production of Melissa officinalis L. cultivated under colored shade nets

    Directory of Open Access Journals (Sweden)

    Graziele C Oliveira

    2016-03-01

    Full Text Available The modulation of light is of importance during cultivation of medicinal plants to obtain desirable morphological and physiological changes associated with the maximum production of active principles. This study aimed to evaluate the effect of the light spectrum transmitted by colored shade nets on growth, essential oil production and photosynthetic behavior in plants of lemon balm (Melissa officinalis L. Plants were cultivated in pots for 4-mo under black, red, and blue nets with 50% shading, and full sunlight exposure. Biometric and anatomical variables, essential oil yield, global solar radiation, photon flux density, chlorophyll content, and gas exchange parameters were measured in M. officinalis leaves. The results showed that despite being considered a partial shade plant, this species is able to adapt to full sunlight conditions without increasing biomass production. The spectral changes provided by colored shade nets did not caused any noticeable change in leaf anatomy of M. officinalis. However, the use of blue net resulted in increments of 116% in plant height, 168% in leaf area, 42% in chlorophyll content and 30% in yield of essential oil in lemon balm plants. These plant's qualities make the use of blue net a cultivation practice suitable for commercial use.

  17. Molecular dynamics simulation of gold cluster growth during sputter deposition

    Energy Technology Data Exchange (ETDEWEB)

    Abraham, J. W., E-mail: abraham@theo-physik.uni-kiel.de; Bonitz, M., E-mail: bonitz@theo-physik.uni-kiel.de [Institut für Theoretische Physik und Astrophysik, Christian-Albrechts-Universität zu Kiel, Leibnizstraße 15, D-24098 Kiel (Germany); Strunskus, T.; Faupel, F. [Institut für Materialwissenschaft, Lehrstuhl für Materialverbunde, Christian-Albrechts-Universität zu Kiel, Kaiserstraße 2, D-24143 Kiel (Germany)

    2016-05-14

    We present a molecular dynamics simulation scheme that we apply to study the time evolution of the self-organized growth process of metal cluster assemblies formed by sputter-deposited gold atoms on a planar surface. The simulation model incorporates the characteristics of the plasma-assisted deposition process and allows for an investigation over a wide range of deposition parameters. It is used to obtain data for the cluster properties which can directly be compared with recently published experimental data for gold on polystyrene [M. Schwartzkopf et al., ACS Appl. Mater. Interfaces 7, 13547 (2015)]. While good agreement is found between the two, the simulations additionally provide valuable time-dependent real-space data of the surface morphology, some of whose details are hidden in the reciprocal-space scattering images that were used for the experimental analysis.

  18. Boron Application Improves Growth, Yield and Net Economic Return of Rice

    Directory of Open Access Journals (Sweden)

    Mubshar HUSSAIN

    2012-09-01

    Full Text Available A field trial was conducted to evaluate the role of boron (B application at different growth stages in improving the growth, yield and net economic return of rice at farmer's fields during summer season, 2009. Boron was soil applied (1.5 kg/hm2 at the transplanting, tillering, flowering and grain formation stages of rice; foliar applied (1.5% B solution at the tillering, flowering and grain formation stages of rice, and dipped seedling roots in 1.5% B solution before transplanting; while control plots did not apply any B. Boron application (except dipping of seedling roots in B solution, which caused toxicity and reduced the number of tillers and straw yield than control substantially improved the rice growth and yield. However, soil application was better in improving the number of grains per panicle, 1000-grain weight, grain yield, harvest index, net economic income and ratio of benefit to cost compared with the rest of treatments. Overall, for improving rice performance and maximizing the net economic returns, B might be applied as soil application at flowering.

  19. Growth kinetics of nc-Si:H deposited at 200 °C by hot-wire chemical vapour deposition

    CSIR Research Space (South Africa)

    Oliphant, CJ

    2011-05-01

    Full Text Available to the absorption characteristics of the material. Surface diffusion determines the growth in the amorphous regime, whereas competing reactions between silicon etching by atomic hydrogen and precursor deposition govern the film growth at the highdilution regime...

  20. High growth rate homoepitaxial diamond film deposition at high temperatures by microwave plasma-assisted chemical vapor deposition

    Science.gov (United States)

    Vohra, Yogesh K. (Inventor); McCauley, Thomas S. (Inventor)

    1997-01-01

    The deposition of high quality diamond films at high linear growth rates and substrate temperatures for microwave-plasma chemical vapor deposition is disclosed. The linear growth rate achieved for this process is generally greater than 50 .mu.m/hr for high quality films, as compared to rates of less than 5 .mu.m/hr generally reported for MPCVD processes.

  1. Partition of metabolizable energy, and prediction of growth performance and lipid deposition in broiler chickens.

    Science.gov (United States)

    Carré, B; Juin, H

    2015-06-01

    The study presented here consisted of the calculation of cross relationships between growth performance parameters, body growth composition, and feed characteristics, using data from an experiment reported in 2 previous publications. In the previous experiment, 30 pelleted diets were given to broiler chickens (8/diet) (21 to 35 d) for in vivo measurement and prediction of AMEn and net energy (NE) values of diets, using 3 trials with 10 diets/trial. In the course of NE determination, individual values for growth, feed intake, and deposition of lipid and protein were measured. Average energy deposited as lipid and protein represented 25.4 and 19.1% AME intake, respectively. Using a multiple regression predicting AME intake, the partial efficiencies of AME for energy deposition as lipid and protein were calculated to be 91.6 and 67.3%, respectively, and the daily amount of AME required for maintenance was evaluated at 0.683 MJ/kg BW0.7. The mean diet NE/AMEn ratios were predicted by an equation combining the lipid content of body growth (positive coefficient) and the apparent digestible protein (ADP) to AMEn ratio (ADP/AMEn), with a quadratic expression for the latter variable. This quadratic response expressed a positive asymptotic relationship, with a plateau for ADP/AMEn values above 1.45 [%/(MJ/kg)]. The equations predicting growth always included either the dietary percentage of water-insoluble cell wall or the AMEn value. The other major parameters predicting growth were either the lipid content of body growth or the CP/AMEn ratio. In many cases, quadratic responses were observed in growth prediction equations. Regressions predicting feed efficiency showed only linear responses. Feed efficiency was predicted precisely by multiple linear regressions based only on AMEn and a dietary protein parameter. According to these regressions, 1% CP was equivalent to 0.247 MJ/kg AMEn in terms of feed efficiency. The most efficient regression predicting the individual lipid

  2. Growth of human cells on a non-woven silk fibroin net: a potential for use in tissue engineering.

    Science.gov (United States)

    Unger, Ronald E; Wolf, Michael; Peters, Kirsten; Motta, Antonella; Migliaresi, Claudio; James Kirkpatrick, C

    2004-03-01

    We have examined a novel biomaterial consisting of a non-woven fibroin net produced from silk (Bombyx mori) cocoons for its ability to support the growth of human cells. Various human cells of different tissue and cell types (endothelial, epithelial, fibroblast, glial, keratinocyte, osteoblast) were examined for adherence and growth on the nets by confocal laser microscopy after staining of the cells with calcein-AM and by electron microscopy. All the cells readily adhered and spread over the individual fibers of the nets. Most of the cells were able to grow and survive on the nets for at least 7 weeks and growth not only covered the individual fibers of the net but generally bridged the gaps between individual fibers forming tissue-like structures. Scanning electron microscopic examination of the nets demonstrated a tight association of individual cells with the fibers and nets examined after removal of cells showed no evidence that the growth of cells in any way changed the structure of the fibers. Thus, silk fibroin nets are highly human cell-compatible and should be a useful new scaffolding biomaterial applicable for a wide range of target tissues in addition to supporting endothelial cells required for the vascularization of the newly formed tissue.

  3. Chemical vapor deposition growth of two-dimensional heterojunctions

    Science.gov (United States)

    Cui, Yu; Li, Bo; Li, JingBo; Wei, ZhongMing

    2018-01-01

    The properties of two-dimensional (2D) layered materials with atom-smooth surface and special interlayer van der Waals coupling are different from those of traditional materials. Due to the absence of dangling bonds from the clean surface of 2D layered materials, the lattice mismatch influences slightly on the growth of 2D heterojunctions, thus providing a flexible design strategy. 2D heterojunctions have attracted extensive attention because of their excellent performance in optoelectronics, spintronics, and valleytronics. The transfer method was utilized for the fabrication of 2D heterojunctions during the early stage of fundamental research on these materials. This method, however, has limited practical applications. Therefore, chemical vapor deposition (CVD) method was recently developed and applied for the preparation of 2D heterojunctions. The CVD method is a naturally down-top growth strategy that yields 2D heterojunctions with sharp interfaces. Moreover, this method effectively reduces the introduction of contaminants to the fabricated heterojunctions. Nevertheless, the CVD-growth method is sensitive to variations in growth conditions. In this review article, we attempt to provide a comprehensive overview of the influence of growth conditions on the fabrication of 2D heterojunctions through the direct CVD method. We believe that elucidating the effects of growth conditions on the CVD method is necessary to help control and improve the efficiency of the large-scale fabrication of 2D heterojunctions for future applications in integrated circuits.

  4. Generation time, net reproductive rate, and growth in stage-age-structured populations

    DEFF Research Database (Denmark)

    Steiner, Uli; Tuljapurkar, Shripad; Coulson, Tim

    2014-01-01

    Abstract Major insights into the relationship between life-history features and fitness have come from Lotka's proof that population growth rate is determined by the level (expected amount) of reproduction and the average timing of reproduction of an individual. But this classical result is limited...... to age-structured populations. Here we generalize this result to populations structured by stage and age by providing a new, unique measure of reproductive timing (Tc) that, along with net reproductive rate (R0), has a direct mathematical relationship to and approximates growth rate (r). We use simple...... features of the life history determine population growth rate r and reveal a complex interplay of trait dynamics, timing, and level of reproduction. Our results contribute to a new framework of population and evolutionary dynamics in stage-and-age-structured populations....

  5. Pyramidal growth of ceria nanostructures by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Bârcă, E.S. [Pitesti University, Faculty of Mechanics and Technology, 110040 Pitesti, Arges (Romania); Filipescu, M., E-mail: mihaela.filipescu@gmail.com [National Institute for Lasers, Plasma and Radiation Physics, 077125 Magurele (Romania); Luculescu, C.; Birjega, R.; Ion, V.; Dumitru, M. [National Institute for Lasers, Plasma and Radiation Physics, 077125 Magurele (Romania); Nistor, L.C. [National Institute of Materials Physics, 077125 Magurele, Ilfov (Romania); Stanciu, G. [National Institute for Lasers, Plasma and Radiation Physics, 077125 Magurele (Romania); University Politehnica of Bucharest, Faculty of Applied Chemistry and Material Science, 011061 Bucharest (Romania); Abrudeanu, M. [Pitesti University, Faculty of Mechanics and Technology, 110040 Pitesti, Arges (Romania); Munteanu, C. [Technical University “Gheorghe Asachi” of Iasi, Faculty of Mechanics, 700050, Iasi (Romania); Dinescu, M. [National Institute for Lasers, Plasma and Radiation Physics, 077125 Magurele (Romania)

    2016-02-15

    Graphical abstract: - Highlights: • Growth of ceria thin films with pyramidal morphology suitable for catalytic and sensor applications. • Ceria thin films with hierarchical structures combination of columnar and dendritic growth and crystalline cubic structure are obtained by pulsed laser deposition. • High substrate temperature influences the appearance of these hierarchical structures. - Abstract: We report in this paper on the deposition and characterization of CeO{sub 2} nanostructured thin films with hierarchical morphology. Micro-sized ceria powder (CeO{sub 2}, 99.9% purity) was pressed to obtain a ceramic target. An ArF laser working at 193 nm irradiated the target in controlled oxygen gas flow at constant pressure (0.1 mbar). Silicon wafers used as substrates for thin films were heated at different temperatures, up to 773 K. The influence of substrate temperature on the structure and surface morphology of ceria thin films was studied by X-ray diffraction (XRD), transmission electron microscopy (TEM), Raman spectroscopy and scanning electron microscopy (SEM). The refractive indices and information about roughness and thickness were revealed by spectroellipsometry. Crystalline cubic ceria thin films exhibiting a hierarchical structure that combines columnar and dendritic growth were obtained at temperatures above 473 K. For the samples obtained at 773 K, columns ending in pyramidal formations with sharp edges and sizes of hundreds of nanometers were observed, indicating a high crystallinity of the layer. XRD analysis reveals a consistent increase of the X-ray coherence length/crystallite size along the [111] direction with increasing temperature. Using a semi-empirical formula, Raman crystallites sizes were calculated and it was found that size increases with the temperature increasing. The spectroellipsometry investigations evidenced the increasing of refractive index with the substrate temperature increase. High surface roughness and pyramidal

  6. Straining Graphene by Chemical Vapour Deposition Growth on Copper

    OpenAIRE

    Yu, Victor; Whiteway, Eric; Maassen, Jesse; Hilke, Michael

    2011-01-01

    Strain can be used as an alternate way to tune the electronic properties of graphene. Here we demonstrate that it is possible to tune the uniform strain of graphene simply by changing the chemical vapor deposition growth temperature of graphene on copper. Due to the cooling of the graphene on copper system, we can induce a uniform compressive strain on graphene. The strain is analyzed by Raman spectroscopy, where a shift in the 2D peak is observed and compared to our ab initio calculations of...

  7. Biomass rather than growth rate determines variation in net primary production by giant kelp.

    Science.gov (United States)

    Reed, Daniel C; Rassweiler, Andrew; Arkema, Katie K

    2008-09-01

    Net primary production (NPP) is influenced by disturbance-driven fluctuations in foliar standing crop (FSC) and resource-driven fluctuations in rates of recruitment and growth, yet most studies of NPP have focused primarily on factors influencing growth. We quantified NPP, FSC, recruitment, and growth rate for the giant kelp, Macrocystis pyrifera, at three kelp forests in southern California, U.S.A., over a 54-month period and determined the relative roles of FSC, recruitment, and growth rate in contributing to variation in annual NPP. Net primary production averaged between 0.42 and 2.38 kg dry mass x m(-2) x yr(-1) at the three sites. The initial FSC present at the beginning of the growth year and the recruitment of new plants during the year explained 63% and 21% of the interannual variation observed in NPP, respectively. The previous year's NPP and disturbance from waves collectively accounted for 80% of the interannual variation in initial FSC. No correlation was found between annual growth rate (i.e., the amount of new kelp mass produced per unit of existing kelp mass) and annual NPP (i.e., the amount of new kelp mass produced per unit area of ocean bottom), largely because annual growth rate was consistent compared to initial FSC and recruitment, which fluctuated greatly among years and sites. Although growth rate was a poor predictor of variation in annual NPP, it was principally responsible for the high mean values observed for NPP by Macrocystis. These high mean values reflected rapid growth (average of approximately 2% per day) of a relatively small standing crop (maximum annual mean = 444 g dry mass/m2) that replaced itself approximately seven times per year. Disturbance-driven variability in FSC may be generally important in explaining variation in NPP, yet it is rarely examined because cycles of disturbance and recovery occur over timescales of decades or more in many systems. Considerable insight into how variation in FSC drives variation in NPP may

  8. Graphene growth from reduced graphene oxide by chemical vapour deposition: seeded growth accompanied by restoration

    OpenAIRE

    Sung-Jin Chang; Moon Seop Hyun; Sung Myung; Min-A Kang; Jung Ho Yoo; Kyoung G. Lee; Bong Gill Choi; Youngji Cho; Gaehang Lee; Tae Jung Park

    2016-01-01

    Understanding the underlying mechanisms involved in graphene growth via chemical vapour deposition (CVD) is critical for precise control of the characteristics of graphene. Despite much effort, the actual processes behind graphene synthesis still remain to be elucidated in a large number of aspects. Herein, we report the evolution of graphene properties during in-plane growth of graphene from reduced graphene oxide (RGO) on copper (Cu) via methane CVD. While graphene is laterally grown from R...

  9. Effects of ozone on growth, net photosynthesis and yield of two African varieties of Vigna unguiculata.

    Science.gov (United States)

    Tetteh, Rashied; Yamaguchi, Masahiro; Wada, Yoshiharu; Funada, Ryo; Izuta, Takeshi

    2015-01-01

    To assess the effects of O(3)on growth, net photosynthesis and yield of two African varieties of cowpea(Vigna unguiculata L.), Blackeye and Asontem were exposed as potted plants to air that was either filtered to remove O(3) (FA), non-filtered air (NF), non-filtered with added O3 of approximately 50 nL L(-1) (ppb) from 11:00 to 16:00 (NF + O(3)) for 88 days in open-top chambers. The mean O(3) concentration (11:00-16:00) during the exposure period had a range from 16 ppb in the FA treatment to 118 ppb in the NF + O(3) treatment. Net photosynthetic rate and leaf area per plant were significantly reduced by exposure to O(3), reducing the growth of both varieties. Exposure to O(3) significantly reduced the 100-seed weight and number of seeds per pod. As a result, cowpea yield was significantly reduced by long-term exposure to O(3), with no difference in sensitivity between the varieties.

  10. Nitrogen and sulphur deposition and the growth of Sphagnum fuscum in bogs of the Athabasca Oil Sands Region, Alberta

    Directory of Open Access Journals (Sweden)

    Melanie A. VILE

    2010-08-01

    Full Text Available One of the consequences of ongoing development of the oil sands reserve in the Athabasca Oil Sands Region (AOSR near Fort McMurray, Alberta, Canada (56° 39' N, 111° 13' W is an increase in emissions of nitrogen (N and sulphur (S, with an attendant increases in regional atmospheric N and S deposition. Regional land cover across northeastern Alberta is a mixture of Boreal Mixedwood, Boreal Highlands, and Subarctic areas. Peatlands occupy between 22 and 66% of these natural regions, and the land cover of bogs varies between 6.7% in the Mixedwood Region to 46% in the Subarctic Region. Ombrotrophic bog ecosystems may be especially sensitive to atmospheric deposition of N and S. Across 10 ombrotrophic bog sites in the AOSR over four years (2005– 2008, we found no evidence of elevated deposition of NH4 +-N, NO3 –-N, total inorganic nitrogen (TIN; NH4 +-N plus NO3 –-N, or SO4 2–-S, with values measured using ion exchange resin collectors averaging 0.61 ± 04, 0.20 ± 0.01, 0.81 ± 0.04, and 1.14 ± 0.06 kg ha–1 y–1, respectively. Vertical growth and net primary production of Sphagnum fuscum, an indicator of elevated deposition, did not differ consistently across sites, averaging 11.8 ± 0.2 mm y–1 and 234 ± 3.3 g m–2 y–1, respectively, over the four years. Neither vertical growth nor net primary production of S. fuscum was correlated with growing season atmospheric N or S deposition. Our data provide a valuable benchmark of background values for monitoring purposes in anticipation of increasing N and S deposition over a broader geographic region within the AOSR.

  11. Ocean Acidification Disrupts Prey Responses to Predator Cues but Not Net Prey Shell Growth in Concholepas concholepas (loco)

    Science.gov (United States)

    Manríquez, Patricio H.; Jara, María Elisa; Mardones, María Loreto; Navarro, Jorge M.; Torres, Rodrigo; Lardies, Marcos A.; Vargas, Cristian A.; Duarte, Cristian; Widdicombe, Stephen; Salisbury, Joseph; Lagos, Nelson A.

    2013-01-01

    Background Most research on Ocean Acidification (OA) has largely focused on the process of calcification and the physiological trade-offs employed by calcifying organisms to support the building of calcium carbonate structures. However, there is growing evidence that OA can also impact upon other key biological processes such as survival, growth and behaviour. On wave-swept rocky shores the ability of gastropods to self-right after dislodgement, and rapidly return to normal orientation, reduces the risk of predation. Methodology/Principal Findings The impacts of OA on this self-righting behaviour and other important parameters such as growth, survival, shell dissolution and shell deposition in Concholepas concholepas (loco) were investigated under contrasting pCO2 levels. Although no impacts of OA on either growth or net shell calcification were found, the results did show that OA can significantly affect self-righting behaviour during the early ontogeny of this species with significantly faster righting times recorded for individuals of C. concholepas reared under increased average pCO2 concentrations (± SE) (716±12 and 1036±14 µatm CO2) compared to those reared at concentrations equivalent to those presently found in the surface ocean (388±8 µatm CO2). When loco were also exposed to the predatory crab Acanthocyclus hassleri, righting times were again increased by exposure to elevated CO2, although self-righting times were generally twice as fast as those observed in the absence of the crab. Conclusions and Significance These results suggest that self-righting in the early ontogeny of C. concholepas will be positively affected by pCO2 levels expected by the end of the 21st century and beginning of the next one. However, as the rate of self-righting is an adaptive trait evolved to reduce lethal predatory attacks, our result also suggest that OA may disrupt prey responses to predators in nature. PMID:23844231

  12. Sex effects on net protein and energy requirements for growth of Saanen goats.

    Science.gov (United States)

    Souza, A P; St-Pierre, N R; Fernandes, M H R M; Almeida, A K; Vargas, J A C; Resende, K T; Teixeira, I A M A

    2017-06-01

    Requirements for growth in the different sexes remain poorly quantified in goats. The objective of this study was to develop equations for estimating net protein (NP G ) and net energy (NE G ) for growth in Saanen goats of different sexes from 5 to 45 kg of body weight (BW). A data set from 7 comparative slaughter studies (238 individual records) of Saanen goats was used. Allometric equations were developed to determine body protein and energy contents in the empty BW (EBW) as dependent variables and EBW as the allometric predictor. Parameter estimates were obtained using a linearized (log-transformation) expression of the allometric equations using the MIXED procedure in SAS software (SAS Institute Inc., Cary, NC). The model included the random effect of the study and the fixed effects of sex (intact male, castrated male, and female; n = 94, 73, and 71, respectively), EBW, and their interactions. Net requirements for growth were estimated as the first partial derivative of the allometric equations with respect to EBW. Additionally, net requirements for growth were evaluated based on the degree of maturity. Monte Carlo techniques were used to estimate the uncertainty of the calculated net requirement values. Sex affected allometric relationships for protein and energy in Saanen goats. The allometric equation for protein content in the EBW of intact and castrated males was log 10 protein (g) = 2.221 (±0.0224) + 1.015 (±0.0165) × log 10 EBW (kg). For females, the relationship was log 10 protein (g) = 2.277 (±0.0288) + 0.958 (±0.0218) × log 10 EBW (kg). Therefore, NP G for males was greater than for females. The allometric equation for the energy content in the EBW of intact males was log 10 energy (kcal) = 2.988 (±0.0323) + 1.240 (±0.0238) × log 10 EBW (kg); of castrated males, log 10 energy (kcal) = 2.873 (±0.0377) + 1.359 (±0.0283) × log 10 EBW (kg); and of females, log 10 energy (kcal) = 2.820 (±0.0377) + 1.442 (±0.0281) × log 10 EBW (kg). The NE G

  13. Graphene growth from reduced graphene oxide by chemical vapour deposition: seeded growth accompanied by restoration

    Science.gov (United States)

    Chang, Sung-Jin; Hyun, Moon Seop; Myung, Sung; Kang, Min-A.; Yoo, Jung Ho; Lee, Kyoung G.; Choi, Bong Gill; Cho, Youngji; Lee, Gaehang; Park, Tae Jung

    2016-03-01

    Understanding the underlying mechanisms involved in graphene growth via chemical vapour deposition (CVD) is critical for precise control of the characteristics of graphene. Despite much effort, the actual processes behind graphene synthesis still remain to be elucidated in a large number of aspects. Herein, we report the evolution of graphene properties during in-plane growth of graphene from reduced graphene oxide (RGO) on copper (Cu) via methane CVD. While graphene is laterally grown from RGO flakes on Cu foils up to a few hundred nanometres during CVD process, it shows appreciable improvement in structural quality. The monotonous enhancement of the structural quality of the graphene with increasing length of the graphene growth from RGO suggests that seeded CVD growth of graphene from RGO on Cu surface is accompanied by the restoration of graphitic structure. The finding provides insight into graphene growth and defect reconstruction useful for the production of tailored carbon nanostructures with required properties.

  14. Growth of Zircone on Nanoporous Alumina Using Molecular Layer Deposition

    Science.gov (United States)

    Hall, Robert A.; George, Steven M.; Kim, Yeongae; Hwang, Woonbong; Samberg, Meghan E.; Monteiro-Riviere, Nancy A.; Narayan, Roger J.

    2014-04-01

    Molecular layer deposition (MLD) is a sequential and self-limiting process that may be used to create hybrid organic/inorganic thin films from organometallic precursors and organic alcohol precursors. In this study, films of a zirconium-containing hybrid organic/inorganic polymer known as zircone were grown on nanoporous alumina using MLD. Scanning electron microscopy data showed obliteration of the pores in zircone-coated nanoporous alumina. An in vitro cell viability study indicated that the growth of human epidermal keratinocytes was the greatest on zircone-coated nanoporous alumina than on uncoated nanoporous alumina. Our results suggest that MLD may be used to create biocompatible coatings for use in many types of medical devices.

  15. Growth of graphene underlayers by chemical vapor deposition

    Directory of Open Access Journals (Sweden)

    Mopeli Fabiane

    2013-11-01

    Full Text Available We present a simple and very convincing approach to visualizing that subsequent layers of graphene grow between the existing monolayer graphene and the copper catalyst in chemical vapor deposition (CVD. Graphene samples were grown by CVD and then transferred onto glass substrates by the bubbling method in two ways, either direct-transfer (DT to yield poly (methyl methacrylate (PMMA/graphene/glass or (2 inverted transfer (IT to yield graphene/PMMA/glass. Field emission scanning electron microscopy (FE-SEM and atomic force microscopy (AFM were used to reveal surface features for both the DT and IT samples. The results from FE-SEM and AFM topographic analyses of the surfaces revealed the underlayer growth of subsequent layers. The subsequent layers in the IT samples are visualized as 3D structures, where the smaller graphene layers lie above the larger layers stacked in a concentric manner. The results support the formation of the so-called “inverted wedding cake” stacking in multilayer graphene growth.

  16. Growth of graphene underlayers by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Fabiane, Mopeli; Khamlich, Saleh; Bello, Abdulhakeem; Dangbegnon, Julien; Momodu, Damilola; Manyala, Ncholu, E-mail: ncholu.manyala@up.ac.za [Department of Physics, Institute of Applied Materials, SARChI Chair in Carbon Technology and Materials, University of Pretoria, Pretoria 0028 (South Africa); Charlie Johnson, A. T. [Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States)

    2013-11-15

    We present a simple and very convincing approach to visualizing that subsequent layers of graphene grow between the existing monolayer graphene and the copper catalyst in chemical vapor deposition (CVD). Graphene samples were grown by CVD and then transferred onto glass substrates by the bubbling method in two ways, either direct-transfer (DT) to yield poly (methyl methacrylate) (PMMA)/graphene/glass or (2) inverted transfer (IT) to yield graphene/PMMA/glass. Field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM) were used to reveal surface features for both the DT and IT samples. The results from FE-SEM and AFM topographic analyses of the surfaces revealed the underlayer growth of subsequent layers. The subsequent layers in the IT samples are visualized as 3D structures, where the smaller graphene layers lie above the larger layers stacked in a concentric manner. The results support the formation of the so-called “inverted wedding cake” stacking in multilayer graphene growth.

  17. Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition

    CERN Document Server

    Kim, H

    2002-01-01

    We have investigated the growth kinetics of plasma-enhanced Ti atomic layer deposition (ALD) using a quartz crystal microbalance. Ti ALD films were grown at temperatures from 20 to 200 deg. C using TiCl sub 4 as a source gas and rf plasma-produced atomic H as the reducing agent. Postdeposition ex situ chemical analyses of thin films showed that the main impurity is oxygen, mostly incorporated during the air exposure prior to analysis. The thickness per cycle, corresponding to the growth rate, was measured by quartz crystal microbalance as a function of various key growth parameters, including TiCl sub 4 and H exposure time, rf plasma power, and sample temperature. The growth rates were independent of TiCl sub 4 exposure above 1x10 sup 3 L, indicating typical ALD mode growth. The key kinetic parameters for Cl extraction reaction and TiCl sub 4 adsorption kinetics were obtained and the growth kinetics were modeled to predict the growth rates based upon these results. Also, the dependency of growth kinetics on d...

  18. Pyramidal growth of ceria nanostructures by pulsed laser deposition

    Science.gov (United States)

    Bârcă, E. S.; Filipescu, M.; Luculescu, C.; Birjega, R.; Ion, V.; Dumitru, M.; Nistor, L. C.; Stanciu, G.; Abrudeanu, M.; Munteanu, C.; Dinescu, M.

    2016-02-01

    We report in this paper on the deposition and characterization of CeO2 nanostructured thin films with hierarchical morphology. Micro-sized ceria powder (CeO2, 99.9% purity) was pressed to obtain a ceramic target. An ArF laser working at 193 nm irradiated the target in controlled oxygen gas flow at constant pressure (0.1 mbar). Silicon wafers used as substrates for thin films were heated at different temperatures, up to 773 K. The influence of substrate temperature on the structure and surface morphology of ceria thin films was studied by X-ray diffraction (XRD), transmission electron microscopy (TEM), Raman spectroscopy and scanning electron microscopy (SEM). The refractive indices and information about roughness and thickness were revealed by spectroellipsometry. Crystalline cubic ceria thin films exhibiting a hierarchical structure that combines columnar and dendritic growth were obtained at temperatures above 473 K. For the samples obtained at 773 K, columns ending in pyramidal formations with sharp edges and sizes of hundreds of nanometers were observed, indicating a high crystallinity of the layer. XRD analysis reveals a consistent increase of the X-ray coherence length/crystallite size along the [111] direction with increasing temperature. Using a semi-empirical formula, Raman crystallites sizes were calculated and it was found that size increases with the temperature increasing. The spectroellipsometry investigations evidenced the increasing of refractive index with the substrate temperature increase. High surface roughness and pyramidal structures were noticed from the atomic force microscopy images for layers deposited at substrate temperature above 473 K.

  19. Optimizing growth conditions for electroless deposition of Au films ...

    Indian Academy of Sciences (India)

    Unknown

    Cathodic: Mn+ + ne– → M (M = metal). The advantages of electroless deposition are many: it is simple, relatively inexpensive and does not generally depend on the shape, size or conductivity of the substrate but yields high purity films. Using electroless deposition, several metals have been deposited on Si and Ge surfaces.

  20. Thin film growth rate effects for primary ion beam deposited diamondlike carbon films

    Science.gov (United States)

    Nir, D.; Mirtich, M.

    1986-01-01

    Diamondlike carbon (DLC) films were grown by primary ion beam deposition and the growth rates were measured for various beam energies, types of hydrocarbon gases and their ratio to Ar, and substrate materials. The growth rate had a linear dependence upon hydrocarbon content in the discharge chamber, and only small dependence on other parameters. For given deposition conditions a threshold in the atomic ratio of carbon to argon gas was identified below which films did not grow on fused silica substrate, but grew on Si substrate and on existing DLC films. Ion source deposition parameters and substrate material were found to affect the deposition threshold and film growth rates.

  1. Net root growth and nutrient acquisition in response to predicted climate change in two contrasting heathland species

    DEFF Research Database (Denmark)

    Arndal, M.F.; Merrild, M.P.; Michelsen, A.

    2013-01-01

    colonization, and fine root N and P uptake by root assay of Deschampsia flexuosa and Calluna vulgaris.Net root growth increased under elevated CO2, warming and drought, with additive effects among the factors. Arbuscular mycorrhizal colonization increased in response to elevated CO2, while ericoid mycorrhizal...

  2. Net expression inhibits the growth of pancreatic ductal adenocarcinoma cell PL45 in vitro and in vivo.

    Directory of Open Access Journals (Sweden)

    Baiwen Li

    Full Text Available Pancreatic ductal adenocarcinoma has a poor prognosis due to late diagnosis and a lack of effective therapeutic options. Thus, it is important to better understand its molecular mechanisms and to develop more effective treatments for the disease. The ternary complex factor Net, which exerts its strong inhibitory function on transcription of proto-oncogene gene c-fos by forming ternary complexes with a second transcription factor, has been suspected of being involved in pancreatic cancer and other tumors biology. In this study, we found that the majority of pancreatic ductal adenocarcinoma tissues and cell lines had weak or no expression of Net, whereas significantly high level of Net expression occurred in paired adjacent normal tissues we studied. Furthermore, using in vitro and in vivo model systems, we found that overexpression of Net inhibited cell growth and survival and induced cell apoptosis in human pancreatic ductal adenocarcinoma cell PL45; the mechanisms by which Net inhibited the cell cycle progression were mainly through P21-Cyclin D1/CDK4 Pathway. Our data thus suggested that Net might play an important role in pancreatic carcinogenesis, possibly by acting as a tumor suppressor gene.

  3. PENGARUH NET INTEREST MARGIN (NIM, BIAYA OPERASIONAL TERHADAP PENDAPATAN OPERASIONAL (BOPO, LOAN TO DEPOSIT RATIO (LDR DAN NON PERFORMING LOAN (NPL TERHADAP RETURN ON ASSETS (ROA

    Directory of Open Access Journals (Sweden)

    Muhammad Ali

    2017-09-01

    Abstrak. Penelitian ini bertujuan untuk mengetahui besarnya pengaruh Net Interest Margin (NIM, Biaya Operasional/Pendapatan Operasional (BOPO,  Loan to Deposit Ratio (LDR, dan  Non Performing Loan (NPL terhadap Return On Assets (ROA pada Bank Umum Milik Negara (Bank BNI, Bank Mandiri, Bank BTN, dan Bank BRI periode 2003-2015. Penelitian ini menggunakan data sekunder yang diperoleh melalui dokumen berupa laporan keungan tahunan. Desain penelitian ini menggunakan analisis asosiatif, yaitu analisis regresi berganda. Hasil penelitian menunjukkan  bahwa secara parsial, Net Interest Margin (NIM, Biaya Operasional/Pendapatan Operasional (BOPO, dan  Loan to Deposit Ratio (LDR berpengaruh terhadap Return On Assets (ROA. Sedangkan Non Performing Loan (NPL tidak berpengaruh terhadap Return On Assets (ROA. Secara simultan, hasil penelitian menunjukkan bahwa Net Interest Margin (NIM , Biaya Operasional/Pendapatan Operasional (BOPO,  Loan to Deposit Ratio (LDR, dan  Non Performing Loan (NPL berpengaruh terhadap Return On Assets (ROA. Kata Kunci: BOPO; LDR; NIM; NPL; ROA.

  4. Growth and properties of nanostructured titanium dioxide deposited by supersonic plasma jet deposition

    Science.gov (United States)

    Dell'Orto, E. C.; Caldirola, S.; Sassella, A.; Morandi, V.; Riccardi, C.

    2017-12-01

    Titanium dioxide (TiO2) is a wide gap semiconductor suitable for many applications. In this work, TiO2 nanostructured thin films are deposited by a plasma assisted supersonic deposition technique on silicon and on conductive glass substrates. Optical Emission Spectroscopy (OES) is used to monitor plasma conditions and precursor dissociation reactions. The influence of deposition parameters on TiO2 structure, uniformity, grain size, and optical properties are investigated by atomic force microscopy (AFM), mechanical profilometer, scanning electron microscopy (SEM) and spectroscopic ellipsometry (SE). Experimental results show how employed technique allows obtaining uniform films, with a tunable deposition range. Grains size could be chosen varying precursor flux during the deposition process. Films nanostructure and porosity result to be affected by grains size. Substrate roughness results to affect film morphology.

  5. Renewable and non-renewable energy consumption and economic growth: Evidence from MENA Net Oil Importing Countries

    OpenAIRE

    Kahia, Montassar; Ben Aissa, Mohamed Safouane

    2014-01-01

    In this paper, we use panel cointegration techniques to explore the relationship between renewable and non-renewable energy consumption and economic growth in a sample of 11 MENA Net Oil Importing Countries covering the period 1980–2012. The Pedroni (1999, 2004), Kao(1999) as well as Westerlund(2007) panel cointegration tests indicate that there is a long-run equilibrium relationship between real GDP, renewable energy consumption, non-renewable energy consumption, real gross fixed capital for...

  6. Chemical vapor deposition polymerization the growth and properties of parylene thin films

    CERN Document Server

    Fortin, Jeffrey B

    2004-01-01

    Chemical Vapor Deposition Polymerization - The Growth and Properties of Parylene Thin Films is intended to be valuable to both users and researchers of parylene thin films. It should be particularly useful for those setting up and characterizing their first research deposition system. It provides a good picture of the deposition process and equipment, as well as information on system-to-system variations that is important to consider when designing a deposition system or making modifications to an existing one. Also included are methods to characterizae a deposition system's pumping properties as well as monitor the deposition process via mass spectrometry. There are many references that will lead the reader to further information on the topic being discussed. This text should serve as a useful reference source and handbook for scientists and engineers interested in depositing high quality parylene thin films.

  7. Chemical solution deposition techniques for epitaxial growth of complex oxides

    NARCIS (Netherlands)

    ten Elshof, Johan E.; Koster, G.; Huijben, Mark; Rijnders, G.

    2015-01-01

    The chemical solution deposition (CSD) process is a wet-chemical process that is employed to fabricate a wide variety of amorphous and crystalline oxide thin films. This chapter describes the typical steps in a CSD process and their influence on the final microstructure and properties of films, and

  8. Miniature Nernstian oxygen sensor for deposition and growth environments

    NARCIS (Netherlands)

    van Setten, E.; Gur, T.M.; Blank, David H.A.; Bravman, J.C.; Beasley, M.R.

    2002-01-01

    A miniature Nernstian-type oxygen sensor employing an ionically conducting stabilized zirconia solid electrolyte and an embedded internal reference electrode is developed and is tested in the temperature range 275–425 °C. It is intended for in situ monitoring of oxygen content in deposition and

  9. Influence of alcohol on grain growth of tin oxide in chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Matsui, Yuji [New Products Development Center, Technology Development Division, Japan/Asia Pacific General Division Automotive Glass Company, Asahi Glass Co. Ltd., 426-1 Sumida, Aikawa-machi, Aiko-gun, Kanagawa 243-0301 (Japan)]. E-mail: yuuji-matsui@agc.co.jp; Mitsuhashi, Michio [New Products Development Center, Technology Development Division, Japan/Asia Pacific General Division Automotive Glass Company, Asahi Glass Co. Ltd., 426-1 Sumida, Aikawa-machi, Aiko-gun, Kanagawa 243-0301 (Japan); Yamamoto, Yuichi [Research Center, Asahi Glass Co. Ltd., 1150 Hazawa-machi, Kanagawa-ku, Yokohama, Kanagawa 221-8755 (Japan); Higashi, Seiji [Research Center, Asahi Glass Co. Ltd., 1150 Hazawa-machi, Kanagawa-ku, Yokohama, Kanagawa 221-8755 (Japan)

    2007-01-22

    Morphologies of tin oxide micro-grains in the early stage of film growth were analyzed for films deposited by chemical vapor deposition using tin chloride as a source material. Atomic force microscopy observations revealed increased micro-grain density and decreased size by adding methanol into the reaction system, but X-ray photoelectron spectroscopy analyses suggested that the total deposited volume was unchanged. The relative amount of chlorine contamination at the bottom of alcohol-added films increased in the order of isopropyl alcohol < ethanol < methanol. A model of chlorine desorption through reaction with alcohol, which occurred in the early stage of film growth, can explain the results.

  10. Deposition conditions for the growth of textured ZnO thin films by aerosol CVD process

    OpenAIRE

    Deschanvres, J.-L.; Bochu, B.; Joubert, J.-C.

    1993-01-01

    The crystalline orientation of ZnO thin films deposited by an aerosol CVD process is studied with regard to the experimental conditions. The quality of the C-axis oriented growth depended on the substrate temperature, on the deposition rate and also on the hygrometric degree of the carrier gas. The quality of the gold sublayer influenced also the quality of the ZnO textured growth. Under a dry gas mixture N2-O2 at 495°C and with a deposition rate of 35Å/mn, the texture ratio was less than -3....

  11. Efficacy of insect-proof nets used in Tunisian tomato greenhouses against Tuta absoluta (Meyrick (Lepidoptera: Gelechiidae and potential impact on plant growth and fruit quality

    Directory of Open Access Journals (Sweden)

    A. Harbi

    2015-12-01

    Full Text Available Insect-proof screens constitute efficient physical means of protecting horticultural crops against insect pests and their use has become widespread. However, they may have a negative impact on plant growth and fruit quality by modifying climatic parameters of greenhouses. In case of tomato crops, they are used mainly against white flies and the tomato leaf miner Tuta absoluta (Meyrick. In Tunisia, tomato plastic tunnels are often netted following two modalities: i complete netting of the greenhouse under the plastic screen (total netting; or ii netting only doors and lateral aeration windows (partial netting. Weekly monitoring of T. absoluta in two tomato greenhouses with different netting setups using pheromone traps and sampling of leaves and fruits showed no differences in the levels of infestation by the pest with a maximum average values of 6.66 eggs/leaf, 4.16 larvae/leaf and 4.16 mines/leaf. The maximum infestation rate of leaves was 86.66% and that of fruits was 10.83%. No effects of the netting setup used on plant growth parameters were detected. However, the study of fruit quality parameters revealed significant decrease in sugar contents in tomato fruits when using total netting setup (4.26°Brix versus 3.68°Brix. Recommendations regarding the combined use of pheromones traps and insect-proof nets are given and possibilities to enhance the efficiency of nets as physical barrier against T. absoluta are explored.

  12. Nucleation and growth of copper selective-area atomic layer deposition on palladium nanostructures

    Science.gov (United States)

    Qi, J.; Zimmerman, D. T.; Weisel, G. J.; Willis, B. G.

    2017-10-01

    The nucleation and growth of copper atomic layer deposition (ALD) on palladium have been investigated for applications in nanoscale devices. Palladium nanostructures were fabricated by electron beam lithography and range in size from 250 nm to 5 μm, prepared on oxidized silicon wafers. Copper ALD using Cu(thd)2(s) and H2(g) as reactants was carried out to selectively deposit copper on palladium seeded regions to the exclusion of surrounding oxide surfaces. Nuclei sizes and densities have been quantified by scanning electron microscopy for different growth conditions. It is found that growth occurs via island growth at temperatures of 150-190 °C and alloy growth at temperatures above 210 °C. In the lower temperature window, nucleation density increases with decreasing temperature, reaching a maximum of 4.8 ± 0.2 × 109/cm2 at 150 °C, but growth is too slow for significant deposition at the lowest temperatures. At higher temperatures, individual nuclei cannot be quantified due to extensive mixing of copper and palladium layers. For the lower temperatures where nuclei can be quantified, rates of nucleation and growth are enhanced at high H2 partial pressures. At the smallest length scales, conformality of the deposited over-layers is limited by a finite nuclei density and evolving grain structure that cause distortion of the original nanostructure shape during growth.

  13. Imaging Pulsed Laser Deposition oxide growth by in-situ Atomic Force Microscopy

    NARCIS (Netherlands)

    Wessels, W. A.; Bollmann, T. R. J.; Post, D.; Koster, G.; Rijnders, G.

    2017-01-01

    To visualize the topography of thin oxide films during growth, thereby enabling to study its growth behavior quasi real-time, we have designed and integrated an atomic force microscope (AFM) in a pulsed laser deposition (PLD) vacuum setup. The AFM scanner and PLD target are integrated in a single

  14. Effect of growth interruptions on TiO{sub 2} films deposited by plasma enhanced chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Li, D., E-mail: dyli@yzu.edu.cn [College of Mechanical Engineering, Yangzhou University, Yangzhou, 225127 (China); Goullet, A. [Institut des Matériaux Jean Rouxel (IMN), UMR CNRS 6502, 2 rue de la Houssinière, 44322, Nantes (France); Carette, M. [Institut d’Electronique, de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Avenue Poincaré, 59652, Villeneuve d' Ascq (France); Granier, A. [Institut des Matériaux Jean Rouxel (IMN), UMR CNRS 6502, 2 rue de la Houssinière, 44322, Nantes (France); Landesman, J.P. [Institut de Physique de Rennes, UMR CNRS 6251, 263 av. Général Leclerc, 35042, Rennes (France)

    2016-10-01

    TiO{sub 2} films of ∼300 nm were deposited at low temperature (<140 °C) and pressure (0.4 Pa) using plasma enhanced chemical vapour deposition at the floating potential (V{sub f}) or the substrate self-bias voltage (V{sub b}) of −50 V. The impact of growth interruptions on the morphology, microstructure and optical properties of the films was investigated. The interruptions were carried out by stopping the plasma generation and gas injection once the increase of the layer thickness during each deposition step was about ∼100 nm. In one case of V{sub f}, the films of ∼300 nm exhibit a columnar morphology consisting of a bottom dense layer, an intermediate gradient layer and a top roughness layer. But the growth interruptions result in an increase of the dense layer thickness and a decrease of surface roughness. The film inhomogeneity has been identified by the in-situ real-time evolution of the kinetic ellipsometry (KE) parameters and the modeling process of spectroscopic ellipsometry (SE). The discrepancy of the refractive index measured by SE between bottom and upper layers can be reduced by growth interruptions. In the other case of V{sub b} = −50 V, the films exhibit a more compact arrangement which is homogeneous along the growth direction as confirmed by KE and SE. Both of Fourier transform infrared spectra and X-ray diffraction illustrate a phase transformation from anatase to rutile with the bias of −50 V, and also evidenced on the evolution of the refractive index dispersion curves. And a greatly increase of the refractive indice in the transparent range can be identified. However, the growth interruptions seem to have no influence on the morphology and optical properties in this case. - Highlights: • TiO{sub 2} films deposited by plasma processes at low temperature and pressure. • Influence of growth interruptions on structural and optical properties. • In-situ real-time ellipsometry measurements on film properties. • Structural and

  15. Fundamental studies of growth mechanisms in physical vapour deposition of aluminium

    CERN Document Server

    Knorr, N J

    2000-01-01

    temperature could be independently controlled due to the low deposition rate of the aluminium. The depositions were performed in a UHV environment to ensure that film growth was not mediated by contamination. The ion energy range used was 10-75eV and the substrate temperature varied from -100 deg C to 200 deg C. The depositions were onto silicon (100) with a native oxide surface, except for a set of depositions which were performed on to silicon with the native oxide surface removed. The cleanliness of the depositions was verified using in-situ XPS analysis and after deposition the structure of the aluminium films was inferred from measurements using SEM, TEM, AFM XRD and Nano-indendation. This information allowed the mechanisms of growth of the aluminium films to be investigated. In addition to the extensive array of IBDR depositions a series of aluminium films were deposited using evaporation and sputtering. These films were grown at substrate temperatures between room temperate and 200 deg C. The use of ev...

  16. Modeling Net Growth of Phaeocystis antarctica Based on Physiological and Optical Responses to Light and Temperature Co-limitation

    Directory of Open Access Journals (Sweden)

    Tiffany A. Moisan

    2018-02-01

    Full Text Available Temperature and light are fundamental environmental variables which regulate phytoplankton growth rates when nutrients are in excess. For polar coastal oceans that are undergoing changes in sea ice cover and warming, light, and temperature are particularly important for bloom dynamics. Using colonial Phaeocystis antarctica cultures grown at steady-state, we assessed the combined effect of these two environmental controls on net growth rate (μn, chlorophyll-specific absorption of light (aph* (λ, and quantum yields for growth (ϕμ. Specific net growth rates (μn varied from 0.04 to 0.34 day−1 within a matrix of light and temperature ranging from 14 to 542 μmol quanta m−2 s−1 and −1.5 to 4°C. Values of aph* (λ varied significantly with light but only slightly with temperature. Values of ϕμ ranged from 0.003 to 0.09 mol C (mol quanta absorbed−1 with highest values at low light and 4°C. For excess irradiances or low temperatures where growth rate is inhibited, quantum yields were low. The low ϕμ values are attributed both to increased absorption by photoprotective pigments compared to photosynthetic pigments and thermodynamic control of dark reaction enzymes. The systematic changes in photophysiological properties of P. antarctica in relation to temperature and light were used to develop a series of nested light- and temperature-dependent models for μn, aph* (λ, and ϕμ. A model for aph* (300–700 nm was developed that takes into account the systematic changes in aph* (λ due to pigment packaging effects and cellular concentrations of chlorophylls and photoprotective pigments. Also, a model for ϕμ was developed based on a cumulative one-hit Poisson probability function. These model parameterizations for absorption and quantum yield are combined into an overall model of net growth that can be applied easily to P. antarctica bloom dynamics using remote sensing data for temperature, light, and chlorophyll a. Furthermore

  17. Kinetic roughening of laser deposited polymer films: crossover from single particle character to continuous growth.

    Science.gov (United States)

    Hachenberg, Jörg; Streng, Christoph; Süske, Erik; Vauth, Sebastian; Mayr, S G; Krebs, Hans-Ulrich; Samwer, Konrad

    2004-06-18

    The crossover in kinetic roughening of thin films from a particle-character-dominated regime to continuous growth behavior has been observed in this work. This has been accomplished by atomic force microscopy investigations of pulsed laser deposited amorphous organic films with thicknesses ranging from several nanometers to more than 4 microm. The early-stage random-deposition-like processes end once a closed layer is formed, which grows without saturation on the characteristic length scales. In addition, the influence of oblique film deposition has been examined and interpreted.

  18. Growth and thermoelectric properties of FeSb2 films produced by pulsed laser deposition

    DEFF Research Database (Denmark)

    Sun, Ye; Canulescu, Stela; Sun, Peijie

    2011-01-01

    Thermoelectric FeSb2 films were produced by pulsed laser deposition on silica substrates in a low-pressure Ar environment. The growth conditions for near phase-pure FeSb2 films were confirmed to be optimized at a substrate temperature of 425°C, an Ar pressure of 2 Pa, and deposition time of 3 h b...... by ablating specifically prepared compound targets made of Fe and Sb powders in atomic ratio of 1:4. The thermoelectric transport properties of FeSb2 films were investigated. Pulsed laser deposition was demonstrated as a method for production of good-quality FeSb2 films....

  19. Impacts of nitrogen and sulfur deposition on the growth of red spruce and sugar maple in the United States

    Science.gov (United States)

    Jennifer N. Phelan; Paramita Sinha; George Van Houtven; Marion Deerhake; Randall G. Waite; Anne W. Rea; Ginger M. Tennant

    2012-01-01

    Total nitrogen (N) and sulfur (S) deposition in forest systems can have either positive or negative impacts on tree growth. The growth of many forests in North America is limited by N availability. Therefore, N fertilization is often a key component of forest management, and in areas of N deposition, tree growth may be stimulated. However, N additions can sometimes be...

  20. Nucleation and growth of copper phthalocyanine aggregates deposited from solution on planar surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Ghani, Fatemeh [Department of Theory & Bio-Systems, Max Planck Institute of Colloids and Interfaces, Am Mühlenberg 1 Golm, 14476 Potsdam (Germany); Gojzewski, Hubert, E-mail: hubert.gojzewski@put.poznan.pl [Department of Theory & Bio-Systems, Max Planck Institute of Colloids and Interfaces, Am Mühlenberg 1 Golm, 14476 Potsdam (Germany); Institute of Physics, Poznan University of Technology, Piotrowo 3, 60-965 Poznan (Poland); Riegler, Hans [Department of Theory & Bio-Systems, Max Planck Institute of Colloids and Interfaces, Am Mühlenberg 1 Golm, 14476 Potsdam (Germany)

    2015-10-01

    Graphical abstract: - Highlights: • Copper phthalocyanine deposited on planar surfaces by 3 solution process methods. • Aggregate morphology examined for coverage extending over 3 orders of magnitude. • Morphologies vary from small individual domains to mesh-like multilayers. • Nucleation and growth model explains the observed deposit morphologies. - Abstract: Copper phthalocyanine (CuPc) dissolved in trifluoroacetic acid (TFA) is deposited on solid SiO{sub 2} surfaces by solvent evaporation. The deposited CuPc aggregates are investigated by atomic force microscopy (AFM). The CuPc deposits were prepared by spin casting, dip coating, and spray deposition. Depending on the amount of deposited CuPc the aggregate morphology ranges from small individual domains to mesh-like multilayers. Each domain/layer consists of many parallel stacks of CuPc molecules with the square, plate-like molecules piled face-wise within each stack. The parallel stacks are attached sideways (i.e., edgewise attachment molecularly) to the substrate forming “nanoribbons” with uniform thickness of about 1 nm and varying width. The thickness reflects the length of a molecular edge, the width the number of stacks. A nucleation and growth model is presented that explains the observed aggregate and multilayer morphologies as result of the combination of nucleation, transport processes and a consequence of the anisotropic intermolecular interactions due to the shape of the CuPc molecule.

  1. Epitaxial growth of atomically flat gadolinia-doped ceria thin films by pulsed laser deposition

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Pryds, Nini; Schou, Jørgen

    ), to the growth of dense, gas impermeable 10 mol% gadolinia-doped ceria (CGO10) solid electrolyte can be overcome by the seeding process. In order to evaluate the seed layer preparation, the effects of different thermal annealing treatments on the morphology, microstructure and surface roughness of ultrathin CGO...... the preparation of ultrathin seed layers in the first stage of the deposition process is often envisaged to control the growth and physical properties of the subsequent coating. This work suggests that the limitations of conventional pulsed laser deposition (PLD), performed at moderate temperature (400°C...

  2. Anthropogenic nitrogen deposition alters growth responses of European beech (Fagus sylvativa L.) to climate change.

    Science.gov (United States)

    Hess, Carsten; Niemeyer, Thomas; Fichtner, Andreas; Jansen, Kirstin; Kunz, Matthias; Maneke, Moritz; von Wehrden, Henrik; Quante, Markus; Walmsley, David; von Oheimb, Goddert; Härdtle, Werner

    2018-02-01

    Global change affects the functioning of forest ecosystems and the services they provide, but little is known about the interactive effects of co-occurring global change drivers on important functions such as tree growth and vitality. In the present study we quantified the interactive (i.e. synergistic or antagonistic) effects of atmospheric nitrogen (N) deposition and climatic variables (temperature, precipitation) on tree growth (in terms of tree-ring width, TRW), taking forest ecosystems with European beech (Fagus sylvatica L.) as an example. We hypothesised that (i) N deposition and climatic variables can evoke non-additive responses of the radial increment of beech trees, and (ii) N loads have the potential to strengthen the trees' sensitivity to climate change. In young stands, we found a synergistic positive effect of N deposition and annual mean temperature on TRW, possibly linked to the alleviation of an N shortage in young stands. In mature stands, however, high N deposition significantly increased the trees' sensitivity to increasing annual mean temperatures (antagonistic effect on TRW), possibly due to increased fine root dieback, decreasing mycorrhizal colonization or shifts in biomass allocation patterns (aboveground vs. belowground). Accordingly, N deposition and climatic variables caused both synergistic and antagonistic effects on the radial increment of beech trees, depending on tree age and stand characteristics. Hence, the nature of interactions could mediate the long-term effects of global change drivers (including N deposition) on forest carbon sequestration. In conclusion, our findings illustrate that interaction processes between climatic variables and N deposition are complex and have the potential to impair growth and performance of European beech. This in turn emphasises the importance of multiple-factor studies to foster an integrated understanding and models aiming at improved projections of tree growth responses to co-occurring drivers

  3. Endothelialization of a non-woven silk fibroin net for use in tissue engineering: growth and gene regulation of human endothelial cells.

    Science.gov (United States)

    Unger, R E; Peters, K; Wolf, M; Motta, A; Migliaresi, C; Kirkpatrick, C J

    2004-09-01

    We have previously shown that a biomaterial consisting of a non-woven fibroin net produced from silk (Bombyx mori) cocoons is an excellent scaffolding material for a wide variety of human cells of different tissue types. Endothelialization must take place for a biomaterial to be successful after implantation. Therefore, primary human endothelial cells and the human endothelial cell lines, HPMEC-ST1.6R and ISO-HAS-1, were examined for adherence and growth patterns on the fibroin nets by confocal laser scanning microscopy after vital staining of the cells and by electron microscopy. Endothelial cells adhered and spread along individual fibers of the nets and did not fill the gaps between individual fibers. Higher attachment and growth coverage was obtained if nets were first coated with gelatin, fibronectin or collagen type I. Proinflammatory markers of endothelial cells on the fibers exhibited a non-activated state and LPS-stimulated cells exhibited activation of these markers. Furthermore, a typical PECAM-1 localization at cell-cell contacts was observed. Scanning electron microscopic examination of fibroin nets after removal of cells did not demonstrate any changes to the fibroin structure. HUVEC and HDMEC on fibroin nets embedded in collagen type I gels formed microvessel-like structures. Thus, silk fibroin nets are a highly endothelial cell-compatible scaffolding material that support the growth, normal and inducible cell functions and angiogenesis potential of human endothelial cells in vitro similar to that observed in vivo.

  4. Developing Inventory Projection Models Using Empirical Net Forest Growth and Growing-Stock Density Relationships Across U.S. Regions and Species Group

    Science.gov (United States)

    Prakash Nepal; Peter J. Ince; Kenneth E. Skog; Sun J. Chang

    2012-01-01

    This paper describes a set of empirical net forest growth models based on forest growing-stock density relationships for three U.S. regions (North, South, and West) and two species groups (softwoods and hardwoods) at the regional aggregate level. The growth models accurately predict historical U.S. timber inventory trends when we incorporate historical timber harvests...

  5. Diamond growth by microwave plasma enhanced chemical vapour deposition: Optical emission characterisation and effect argon addition

    Science.gov (United States)

    Mortet, V.; Hubicka, Z.; Vorlicek, V.; Jurek, K.; Rosa, J.; Vanecek, M.

    2004-09-01

    Diamond thin films were grown in an ellipsoidal 6 kWatt microwave plasma chemical vapour deposition reactor [1, 2] in a pressure range of 150 to 250 mbar. Effect of total pressure, methane concentration and argon concentration on diamond growth on mechanically seeded silicon substrates and on plasma characteristics were investigated. Optically good thick diamond films were obtained with high growth rate (4.5 m/h) at high-pressure. The argon concentration affects strongly the deposition rate, the surface morphology and the grain size. The microwave plasma was characterized by optical emission spectroscopy (OES) during deposition. Diamond films were characterized by Raman Spectroscopy and Scanning Electron Microscopy (SEM). The temperatures of the excited CH and C2 species, as well as the excitation temperature were determined from the OES measurements. The plasma composition is sensitive to the methane concentration and especially to the argon concentration in the discharge.

  6. Low Temperature Metal Free Growth of Graphene on Insulating Substrates by Plasma Assisted Chemical Vapor Deposition.

    Science.gov (United States)

    Muñoz, R; Munuera, C; Martínez, J I; Azpeitia, J; Gómez-Aleixandre, C; García-Hernández, M

    2017-03-01

    Direct growth of graphene films on dielectric substrates (quartz and silica) is reported, by means of remote electron cyclotron resonance plasma assisted chemical vapor deposition r-(ECR-CVD) at low temperature (650°C). Using a two step deposition process- nucleation and growth- by changing the partial pressure of the gas precursors at constant temperature, mostly monolayer continuous films, with grain sizes up to 500 nm are grown, exhibiting transmittance larger than 92% and sheet resistance as low as 900 Ω·sq-1. The grain size and nucleation density of the resulting graphene sheets can be controlled varying the deposition time and pressure. In additon, first-principles DFT-based calculations have been carried out in order to rationalize the oxygen reduction in the quartz surface experimentally observed. This method is easily scalable and avoids damaging and expensive transfer steps of graphene films, improving compatibility with current fabrication technologies.

  7. Chemical vapor deposition growth of bilayer graphene in between molybdenum disulfide sheets

    NARCIS (Netherlands)

    Kwieciñski, Wojciech; Sotthewes, Kai; Poelsema, Bene; Zandvliet, Harold J.W.; Bampoulis, Pantelis

    2017-01-01

    Direct growth of flat micrometer-sized bilayer graphene islands in between molybdenum disulfide sheets is achieved by chemical vapor deposition of ethylene at about 800 °C. The temperature assisted decomposition of ethylene takes place mainly at molybdenum disulfide step edges. The carbon atoms

  8. Growth Process Conditions of Tungsten Oxide Thin Films Using Hot-Wire Chemical Vapor Deposition

    NARCIS (Netherlands)

    Houweling, Z.S.|info:eu-repo/dai/nl/251874486; Geus, J.W.; de Jong, M.; Harks, P.P.R.M.L.; van der Werf, C.H.M.; Schropp, R.E.I.|info:eu-repo/dai/nl/072502584

    2011-01-01

    We report the growth conditions of nanostructured tungsten oxide (WO3−x) thin films using hot-wire chemical vapor deposition (HWCVD). Two tungsten filaments were resistively heated to various temperatures and exposed to an air flow at various subatmospheric pressures. The oxygen partial pressure was

  9. Epitaxial growth of solution deposited Bi2Sr2CaCu2Ox films

    NARCIS (Netherlands)

    Gobel, OF; Du, [No Value; Hibma, T; von Lampe, [No Value; Steiner, U

    The epitaxial growth of Bi2Sr2CaCu2Ox (Bi2212) high temperature superconducting thin films was studied. The films were solution-deposited from a polymer-containing precursor onto SrTiO3 (001) substrates. Bi2212 formed an epitaxial phase with the c-axis parallel to the substrate normal and an in-lane

  10. X-ray-reflectivity study of the growth kinetics of vapor-deposited silver films

    NARCIS (Netherlands)

    Thompson, C.; Palasantzas, G.; Feng, Y.P.; Krim, J.

    1994-01-01

    X-ray-reflectivity measurements have been carried out on silver films which were vapor deposited onto silicon substrates, to investigate the thickness evolution of the film’s surface roughness. The growth exponent was found to be β=0.26±0.05, and the roughness exponenet was found to be H=0.70±0.10.

  11. Phase diagram of interfacial growth modes by vapor deposition and its application for ZnO nanostructures

    Science.gov (United States)

    Shu, Da-Jun; Xiong, Xiang; Liu, Ming; Wang, Mu

    2017-09-01

    Interfacial growth from vapor has been extensively studied. However, a straightforward picture of the growth mode under different growth conditions is still lacking. In this paper, we develop a comprehensive interfacial growth theory based on the stochastic approach. Using a critical interisland separation, we construct a general phase diagram of the growth modes. It has been revealed that if the Ehrlich-Schwoebel barrier EES is smaller than a critical value, the interfacial growth proceeds in a layer-by-layer (LBL) mode at any deposition rate. However, if EES is larger than the critical value, LBL growth occurs only at very small or very large deposition rates relative to the intralayer hopping rate, and multilayer (ML) growth occurs at a moderate deposition rate. Experiments with zinc oxide growth by chemical vapor deposition have been designed to qualitatively demonstrate the theoretical model. By changing the flux of the carrier gas (nitrogen gas) in chemical vapor deposition, we realize LBL, ML, and then reentrance of LBL homoepitaxial growth of ZnO successively. Moreover, we find that surface kinetics of ZnO is suppressed by decreasing oxygen partial pressure by comparing the experimental observations and theoretical models, which is supported by our recent first-principles calculations. Since the influence of the substrate and the growth species on growth can approximately be represented by binding energy and surface kinetics, we suggest that the phase diagram is essential for interfacial growth of different materials by vapor deposition.

  12. Transforming growth factor-β-activated kinase 1 (TAK1 is required for human FcγRIIIb-induced neutrophil extracellular trap (NET formation

    Directory of Open Access Journals (Sweden)

    Omar Rafael Alemán

    2016-07-01

    Full Text Available Neutrophils (PMN are the most abundant leukocytes in the blood. PMN migrate from the circulation to sites of infection, where they are responsible for antimicrobial functions. PMN use phagocytosis, degranulation, and formation of neutrophil extracellular traps (NETs to kill microbes. Several stimuli, including bacteria, fungi, and parasites, and some pharmacological compounds such as PMA are efficient inducers of NETs. Antigen-antibody complexes are also capable of inducing NET formation. Recently, it was reported that FcγRIIIb crosslinking induced NET formation similarly to PMA stimulation. Direct crosslinking of FcγRIIA or integrins did not promote NET formation. FcγRIIIb-induced NET formation presented different kinetics from PMA-induced NET formation, suggesting differences in signaling. Because FcγRIIIb also induces a strong activation of ERK and nuclear factor Elk-1, and the transforming growth factor-β-activated kinase 1 (TAK1 has recently been implicated in ERK signaling, in the present report, we explored the role of TAK1 in the signaling pathway activated by FcγRIIIb leading to NET formation. FcγRIIIb was stimulated by specific monoclonal antibodies and NET formation was evaluated in the presence or absence of pharmacological inhibitors. The antibiotic LL Z1640-2, a selective inhibitor of TAK1 prevented FcγRIIIb-induced, but not PMA-induced NET formation. Both PMA and FcγRIIIb crosslinkng induced phosphorylation of ERK. But, LL Z1640-2 only inhibited the FcγRIIIb-mediated activation of ERK. Also, only FcγRIIIb, similarly to transforming growth factor-β, induced TAK1 phosphorylation. A MEK (ERK kinase specific inhibitor was able to prevent ERK phosphorylation induced by both PMA and FcγRIIIb. These data show for the first time that FcγRIIIb crosslinking activates TAK1 and that this kinase is required for triggering the MEK/ERK signaling pathway to NETosis.

  13. Growth and deposition of body components of intermediate and high performance broilers

    Directory of Open Access Journals (Sweden)

    JD Henn

    2014-09-01

    Full Text Available The objectives of the present study were to determine the parameters of Gompertz equations and to determine curves and growth rate, feed intake and body component deposition, as well as allometric coefficients of body water, protein, and fat relative to live weight of male and female broilers of intermediate performance (C44 and high performance (Cobb-500 genetic strains. In total, 384 one-d-old chicks were distributed into four treatments: male Cobb 500, male C44, female Cobb 500, and female C44, with six replicates of 16 birds, according to a completely randomized experimental design. Average body weight, weight gain, and feed intake were weekly determined, and six birds, representing the average weight of each treatment, were sacrificed to determine body composition. Growth curves were built applying Gompertz function, with excellent fit, and growth, feed intake, and tissue deposition rates were obtained by its derivatives. Superior growth rate was obtained for Cobb 500 male broilers. This genetic strain has higher feed intake capacity, which is achieved earlier than in the C44 strain. Protein and fat deposition maturity was reached earlier in males than in females in Cobb 500. The allometric coefficients showed earlier maturity for body water in C44 and females. In terms of body protein, male Cobb 500 broilers reached maturity earlier than females and C44. Body fat deposition maturity was reached earlier in Cobb 500 than in C44. The Gompertz equations obtained in the present study efficiently described body growth, feed intake, and deposition of body components, with a coefficient of determination higher than 0.99.

  14. Growth and characterization of titanium oxide by plasma enhanced atomic layer deposition

    KAUST Repository

    Zhao, Chao

    2013-09-01

    The growth of TiO2 films by plasma enhanced atomic layer deposition using Star-Ti as a precursor has been systematically studied. The conversion from amorphous to crystalline TiO2 was observed either during high temperature growth or annealing process of the films. The refractive index and bandgap of TiO2 films changed with the growth and annealing temperatures. The optimization of the annealing conditions for TiO2 films was also done by morphology and density studies. © 2013 Elsevier B.V. All rights reserved.

  15. Growth of axial SiGe heterostructures in nanowires using pulsed laser deposition

    Science.gov (United States)

    Eisenhawer, Björn; Sivakov, Vladimir; Berger, Andreas; Christiansen, Silke

    2011-07-01

    Axial heterojunctions between pure silicon and pure germanium in nanowires have been realized combining pulsed laser deposition, chemical vapor deposition and electron beam evaporation in a vapor-liquid-solid nanowire growth experiment using gold nanoparticles as catalyst for the 1D wire growth. Energy dispersive x-ray mappings and line scans show a compositional transition from pure silicon to pure germanium and vice versa with exponential and thus comparably sharp transition slopes. Based on these results not only Si-Ge heterojunctions seem to be possible using the vapor-liquid-solid growth process but also heterojunctions in optoelectronic III-V compounds such as InGaAs/GaAs or group III nitride compounds such as InGaN/GaN as well as axial p-n junctions in Si nanowires.

  16. Growth of axial SiGe heterostructures in nanowires using pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Eisenhawer, Bjoern; Sivakov, Vladimir; Berger, Andreas; Christiansen, Silke, E-mail: bjoern.eisenhawer@ipht-jena.de [Institute of Photonic Technology, Albert-Einstein-Strasse 9, D-07745 Jena (Germany)

    2011-07-29

    Axial heterojunctions between pure silicon and pure germanium in nanowires have been realized combining pulsed laser deposition, chemical vapor deposition and electron beam evaporation in a vapor-liquid-solid nanowire growth experiment using gold nanoparticles as catalyst for the 1D wire growth. Energy dispersive x-ray mappings and line scans show a compositional transition from pure silicon to pure germanium and vice versa with exponential and thus comparably sharp transition slopes. Based on these results not only Si-Ge heterojunctions seem to be possible using the vapor-liquid-solid growth process but also heterojunctions in optoelectronic III-V compounds such as InGaAs/GaAs or group III nitride compounds such as InGaN/GaN as well as axial p-n junctions in Si nanowires.

  17. Growth of axial SiGe heterostructures in nanowires using pulsed laser deposition.

    Science.gov (United States)

    Eisenhawer, Björn; Sivakov, Vladimir; Berger, Andreas; Christiansen, Silke

    2011-07-29

    Axial heterojunctions between pure silicon and pure germanium in nanowires have been realized combining pulsed laser deposition, chemical vapor deposition and electron beam evaporation in a vapor-liquid-solid nanowire growth experiment using gold nanoparticles as catalyst for the 1D wire growth. Energy dispersive x-ray mappings and line scans show a compositional transition from pure silicon to pure germanium and vice versa with exponential and thus comparably sharp transition slopes. Based on these results not only Si-Ge heterojunctions seem to be possible using the vapor-liquid-solid growth process but also heterojunctions in optoelectronic III-V compounds such as InGaAs/GaAs or group III nitride compounds such as InGaN/GaN as well as axial p-n junctions in Si nanowires.

  18. Oriented growth of CoPt nanoparticles by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Pan, Z.Y.; Rawat, R.S.; Mahmood, S.; Lee, P.; Springham, S.V.; Tan, T.L. [Nanyang Technological University, NSSE, National Institute of Education, Singapore (Singapore); Lin, J.J. [National University of Singapore, Solar Energy Research Institute of Singapore, Singapore (Singapore); Ramanujan, R.V. [Nanyang Technological University, School of Materials Science and Engineering, Singapore (Singapore)

    2010-12-15

    The magnetic nanoparticles of Fe/FeCo/FePt, in the past, in a PLD system were grown by us using argon ambient gas pressure of about 0.1-75.0 mbar, as the ambient gas pressure can be used to tune the energy of the incident plasma plume species, the expansion volume, the growth duration, etc. which can control the particle size. In present paper, we report the direct synthesis of small-sized nanoparticles even when no ambient gas was used, with the experiments being done in higher vacuum of about 10{sup -5} mbar in PLD chamber. The deposition rate under vacuum condition is significantly higher than the deposition rate at high ambient pressure. The study of inplane and outplane magnetic properties, along with XRD results, confirmed that the as-deposited CoPt nanoparticles thin film has oriented growth. The as-deposited CoPt nanoparticles are in magnetically soft fcc phase and a post deposition annealing at 600 C resulted in phase transition to magnetically hard fct phase. (orig.)

  19. Disilane as a growth rate catalyst of plasma deposited microcrystalline silicon thin films

    Energy Technology Data Exchange (ETDEWEB)

    Dimitrakellis, P.; Amanatides, E., E-mail: lef@plasmatech.gr; Mataras, D. [Department of Chemical Engineering, Plasma Technology Laboratory, University of Patras, P.O. Box 140, 26504 Patras (Greece); Kalampounias, A. G. [University of Ioannina, Dep. of Chemistry, 45110, Ioannina (Greece); Spiliopoulos, N. [Department of Physics, University of Patras, P.O. Box 140, 26504 Patras (Greece); Lahootun, V.; Coeuret, F.; Madec, A. [Air Liquide CRCD,1 chemin de la porte des Loges, Les Loges en Josas, 78354 Jouy en Josas (France)

    2016-07-15

    The effect of small disilane addition on the gas phase properties of silane-hydrogen plasmas and the microcrystalline silicon thin films growth is presented. The investigation was conducted in the high pressure regime and for constant power dissipation in the discharge with the support of plasma diagnostics, thin film studies and calculations of discharge microscopic parameters and gas dissociation rates. The experimental data and the calculations show a strong effect of disilane on the electrical properties of the discharge in the pressure window from 2 to 3 Torr that is followed by significant raise of the electron number density and the drop of the sheaths electric field intensity. Deposition rate measurements show an important four to six times increase even for disilane mole fractions as low as 0.3 %. The deposition rate enhancement was followed by a drop of the material crystalline volume fraction but films with crystallinity above 40 % were deposited with different combinations of total gas pressure, disilane and silane molar ratios. The enhancement was partly explained by the increase of the electron impact dissociation rate of silane which rises by 40% even for 0.1% disilane mole fraction. The calculations of the gas usage, the dissociation and the deposition efficiencies show that the beneficial effect on the growth rate is not just the result of the increase of Si-containing molecules density but significant changes on the species participating to the deposition and the mechanism of the film growth are caused by the disilane addition. The enhanced participation of the highly sticking to the surface radical such as disilylene, which is the main product of disilane dissociation, was considered as the most probable reason for the significant raise of the deposition efficiency. The catalytic effect of such type of radical on the surface reactivity of species with lower sticking probability is further discussed, while it is also used to explain the restricted

  20. Disilane as a growth rate catalyst of plasma deposited microcrystalline silicon thin films

    Science.gov (United States)

    Dimitrakellis, P.; Kalampounias, A. G.; Spiliopoulos, N.; Amanatides, E.; Mataras, D.; Lahootun, V.; Coeuret, F.; Madec, A.

    2016-07-01

    The effect of small disilane addition on the gas phase properties of silane-hydrogen plasmas and the microcrystalline silicon thin films growth is presented. The investigation was conducted in the high pressure regime and for constant power dissipation in the discharge with the support of plasma diagnostics, thin film studies and calculations of discharge microscopic parameters and gas dissociation rates. The experimental data and the calculations show a strong effect of disilane on the electrical properties of the discharge in the pressure window from 2 to 3 Torr that is followed by significant raise of the electron number density and the drop of the sheaths electric field intensity. Deposition rate measurements show an important four to six times increase even for disilane mole fractions as low as 0.3 %. The deposition rate enhancement was followed by a drop of the material crystalline volume fraction but films with crystallinity above 40 % were deposited with different combinations of total gas pressure, disilane and silane molar ratios. The enhancement was partly explained by the increase of the electron impact dissociation rate of silane which rises by 40% even for 0.1% disilane mole fraction. The calculations of the gas usage, the dissociation and the deposition efficiencies show that the beneficial effect on the growth rate is not just the result of the increase of Si-containing molecules density but significant changes on the species participating to the deposition and the mechanism of the film growth are caused by the disilane addition. The enhanced participation of the highly sticking to the surface radical such as disilylene, which is the main product of disilane dissociation, was considered as the most probable reason for the significant raise of the deposition efficiency. The catalytic effect of such type of radical on the surface reactivity of species with lower sticking probability is further discussed, while it is also used to explain the restricted

  1. Growth, Properties and Applications of Mo Ox Thin-Films Deposited by Reactive Sputtering

    DEFF Research Database (Denmark)

    Fernandes Cauduro, André Luis

    Transition metal-oxide (TMOs) thin-films are commonly used in optoelectronic devices such as in photovoltaics and light emitting diodes, using both organic, inorganic and hybrid technologies. In such devices, TMOs typically act as an interfacial layer, where its functionality is to facilitate hole...... sputtering. The composition of the films was controlled mainly through the oxygen partial pressure during growth, and crystallization of the amorphous as-deposited films was obtained through ultra high vacuum annealing. The defect band of as-deposited MoOx films was studied by photoemission spectroscopy...

  2. Growth mechanisms of zinc oxide and zinc sulfide films by mist chemical vapor deposition

    Science.gov (United States)

    Uno, Kazuyuki; Yamasaki, Yuichiro; Tanaka, Ichiro

    2017-01-01

    The growth mechanisms of zinc oxide and zinc sulfide films by mist chemical vapor deposition (mist-CVD) were experimentally investigated from the viewpoint of mist behaviors and chemical reactions. The proper growth model, either vaporization or the Leidenfrost model, was studied by supplying two kinds of mists with different kinds of sources, such as H2 16O and H2 18O for ZnO growth and ZnCl2 and thiourea for ZnS growth. Moreover, the origin of the oxygen atoms of ZnO was investigated using a quantitative analysis. The role of chloro complex of zinc in the growth of ZnS from aqueous solutions was also examined by systematic studies.

  3. Growth and body nutrient deposition of two broiler commercial genetic lines

    Directory of Open Access Journals (Sweden)

    SM Marcato

    2008-06-01

    Full Text Available The objective of this work was to study growth and body nutrient deposition profiles of male and female Cobb and Ross broilers using Gompertz equations. A total number of 1,920 one- to 56-day-old broilers were used. A randomized experimental design in a factorial arrangement (2 strains x 2 sex, with 4 replicates of 120 birds each, was applied. Diets were formulated to supply the nutrient requirements recommended by the genetic companies. A sample of birds was weekly weighed and sacrificed after 24 hours fasting. Carcasses were de-feathered and weighed again. The parameters of the Gompertz equation for body weight and its components (water, ashes, protein, and fat were estimated. An interaction (p<0.05 between sex and breed was observed for mature weight (Wm (kg, growth rate (b (daily and time at maximum growth rate (t* (day of body weight, and body water and ash. Cobb was presented earlier growth and body protein and ash deposition. Ross strain was superior in body water deposition.

  4. Temperature-dependent subsurface growth during atomic layer deposition on polypropylene and cellulose fibers.

    Science.gov (United States)

    Jur, Jesse S; Spagnola, Joseph C; Lee, Kyoungmi; Gong, Bo; Peng, Qing; Parsons, Gregory N

    2010-06-01

    Nucleation and subsequent growth of aluminum oxide by atomic layer deposition (ALD) on polypropylene fiber substrates is strongly dependent on processing temperature and polymer backbone structure. Deposition on cellulose cotton, which contains ample hydroxyl sites for ALD nucleation and growth on the polymer backbone, readily produces a uniform and conformal coating. However, similar ALD processing on polypropylene, which contains no readily available active sites for growth initiation, results in a graded and intermixed polymer/inorganic interface layer. The structure of the polymer/inorganic layer depends strongly on the process temperature, where lower temperature (60 degrees C) produced a more abrupt transition. Cross-sectional transmission electron microscopy images of polypropylene fibers coated at higher temperature (90 degrees C) show that non-coalesced particles form in the near-surface region of the polymer, and the particles grow in size and coalesce into a film as the number of ALD cycles increases. Quartz crystal microbalance analysis on polypropylene films confirms enhanced mass uptake at higher processing temperatures, and X-ray photoelectron spectroscopy data also confirm heterogeneous mixing between the aluminum oxide and the polypropylene during deposition at higher temperatures. The strong temperature dependence of film nucleation and subsurface growth is ascribed to a relatively large increase in bulk species diffusivity that occurs upon the temperature-driven free volume expansion of the polypropylene. These results provide helpful insight into mechanisms for controlled organic/inorganic thin film and fiber materials integration.

  5. Growth characteristics of inclined columns produced by Glancing Angle Deposition (GLAD) and colloidal lithography

    DEFF Research Database (Denmark)

    Foss, Morten; Besenbacher, Flemming; Sutherland, Duncan S

    2011-01-01

    of the individual columns. The changes in column shape as function of the amount of mass deposited on the respective surfaces were characterized by monitoring the increase in the length and width of the structures. Interestingly the column shape development followed a power law behaviour. The power law exponents......Nanocolumns were produced by performing Glancing Angle Deposition (GLAD) onto self-assembled template arrays consisting of platinum coated polystyrene spheres. By varying the angle of incidence (θ = 35°, 10° and 5°) and the deposited surface mass density it was possible to control the shape...... and shadowing effects. A detailed understanding of the underlying processes governing the nanocolumn growth might be utilized in the design of new functional nanomaterials....

  6. THE EFFECT OF DIFFERENT QUALITY PELLETED FEEDS ON THE GROWTH OF GREEN CATFISH (Hemibagrus nemurus IN FLOATING NET CAGE

    Directory of Open Access Journals (Sweden)

    Ningrum Suhenda

    2010-12-01

    Full Text Available The study was conducted to evaluate the different protein content of fish feed on the growth performance of green catfish (Hemibagrus nemurus. Two thousand fingerlings averaging 3.92±0.32 g of individual body weight were stocked in each floating net cage (3 m x 3 m x 3 m in Musi River, South Sumatra. They were fed daily for four months with feed protein content of 27% and 31%. The feed was given in pelleted form at 4%-8% of the total body weight. The result showed that the feed with 31% protein content gave better performance and significant different (P<0.05 than 27% protein feed. The feed content 31% protein was optimum for green catfish fingerlings and gave higher average individual weight gain (80.48 g, specific growth rate (2.67%, fat retention (29.48% and better feed conversion ratio (2.28. Survival rates were the same for 2 treatments and ranged between 94.17%-95.18%.

  7. Preferential growth of ZnO thin films by the atomic layer deposition technique

    Science.gov (United States)

    Pung, Swee-Yong; Choy, Kwang-Leong; Hou, Xianghui; Shan, Chongxin

    2008-10-01

    Preferred orientation of ZnO thin films deposited by the atomic layer deposition (ALD) technique could be manipulated by deposition temperature. In this work, diethyl zinc (DEZn) and deionized water (H2O) were used as a zinc source and oxygen source, respectively. The results demonstrated that (10.0) dominant ZnO thin films were grown in the temperature range of 155-220 °C. The c-axis crystal growth of these films was greatly suppressed. Adhesion of anions (such as fragments of an ethyl group) on the (00.2) polar surface of the ZnO thin film was believed to be responsible for this suppression. In contrast, (00.2) dominant ZnO thin films were obtained between 220 and 300 °C. The preferred orientations of (10.0) and (00.2) of the ZnO thin films were examined by XRD texture analysis. The texture analysis results agreed well with the alignments of ZnO nanowires (NWs) which were grown from these ZnO thin films. In this case, the nanosized crystals of ZnO thin films acted as seeds for the growth of ZnO nanowires (NWs) by chemical vapor deposition (CVD) process. The highly (00.2) textured ZnO thin films deposited at high temperatures, such as 280 °C, contained polycrystals with the c axis perpendicular to the substrate surface and provided a good template for the growth of vertically aligned ZnO NWs.

  8. Regression analysis to predict growth performance from dietary net energy in growing-finishing pigs.

    Science.gov (United States)

    Nitikanchana, S; Dritz, S S; Tokach, M D; DeRouchey, J M; Goodband, R D; White, B J

    2015-06-01

    Data from 41 trials with multiple energy levels (285 observations) were used in a meta-analysis to predict growth performance based on dietary NE concentration. Nutrient and energy concentrations in all diets were estimated using the NRC ingredient library. Predictor variables examined for best fit models using Akaike information criteria included linear and quadratic terms of NE, BW, CP, standardized ileal digestible (SID) Lys, crude fiber, NDF, ADF, fat, ash, and their interactions. The initial best fit models included interactions between NE and CP or SID Lys. After removal of the observations that fed SID Lys below the suggested requirement, these terms were no longer significant. Including dietary fat in the model with NE and BW significantly improved the G:F prediction model, indicating that NE may underestimate the influence of fat on G:F. The meta-analysis indicated that, as long as diets are adequate for other nutrients (i.e., Lys), dietary NE is adequate to predict changes in ADG across different dietary ingredients and conditions. The analysis indicates that ADG increases with increasing dietary NE and BW but decreases when BW is above 87 kg. The G:F ratio improves with increasing dietary NE and fat but decreases with increasing BW. The regression equations were then evaluated by comparing the actual and predicted performance of 543 finishing pigs in 2 trials fed 5 dietary treatments, included 3 different levels of NE by adding wheat middlings, soybean hulls, dried distillers grains with solubles (DDGS; 8 to 9% oil), or choice white grease (CWG) to a corn-soybean meal-based diet. Diets were 1) 30% DDGS, 20% wheat middlings, and 4 to 5% soybean hulls (low energy); 2) 20% wheat middlings and 4 to 5% soybean hulls (low energy); 3) a corn-soybean meal diet (medium energy); 4) diet 2 supplemented with 3.7% CWG to equalize the NE level to diet 3 (medium energy); and 5) a corn-soybean meal diet with 3.7% CWG (high energy). Only small differences were observed

  9. Continuous growth of single-wall carbon nanotubes using chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Grigorian, Leonid; Hornyak, Louis; Dillon, Anne C; Heben, Michael J

    2014-09-23

    The invention relates to a chemical vapor deposition process for the continuous growth of a carbon single-wall nanotube where a carbon-containing gas composition is contacted with a porous membrane and decomposed in the presence of a catalyst to grow single-wall carbon nanotube material. A pressure differential exists across the porous membrane such that the pressure on one side of the membrane is less than that on the other side of the membrane. The single-wall carbon nanotube growth may occur predominately on the low-pressure side of the membrane or, in a different embodiment of the invention, may occur predominately in between the catalyst and the membrane. The invention also relates to an apparatus used with the carbon vapor deposition process.

  10. Continuous growth of single-wall carbon nanotubes using chemical vapor deposition

    Science.gov (United States)

    Grigorian, Leonid [Raymond, OH; Hornyak, Louis [Evergreen, CO; Dillon, Anne C [Boulder, CO; Heben, Michael J [Denver, CO

    2008-10-07

    The invention relates to a chemical vapor deposition process for the continuous growth of a carbon single-wall nanotube where a carbon-containing gas composition is contacted with a porous membrane and decomposed in the presence of a catalyst to grow single-wall carbon nanotube material. A pressure differential exists across the porous membrane such that the pressure on one side of the membrane is less than that on the other side of the membrane. The single-wall carbon nanotube growth may occur predominately on the low-pressure side of the membrane or, in a different embodiment of the invention, may occur predominately in between the catalyst and the membrane. The invention also relates to an apparatus used with the carbon vapor deposition process.

  11. Thin film growth into the ion track structures in polyimide by atomic layer deposition

    Science.gov (United States)

    Mättö, L.; Malm, J.; Arstila, K.; Sajavaara, T.

    2017-09-01

    High-aspect ratio porous structures with controllable pore diameters and without a stiff substrate can be fabricated using the ion track technique. Atomic layer deposition is an ideal technique for depositing thin films and functional surfaces on complicated 3D structures due to the high conformality of the films. In this work, we studied Al2O3 and TiO2 films grown by ALD on pristine polyimide (Kapton HN) membranes as well as polyimide membranes etched in sodium hypochlorite (NaOCl) and boric acid (BO3) solution by means of RBS, PIXE, SEM-EDX and helium ion microcopy (HIM). The focus was on the first ALD growth cycles. The areal density of Al2O3 film in the 400 cycle sample was determined to be 51 ± 3 × 1016 at./cm2, corresponding to the thickness of 55 ± 3 nm. Furthermore, the growth per cycle was 1.4 Å/cycle. The growth is highly linear from the first cycles. In the case of TiO2, the growth per cycle is clearly slower during the first 200 cycles but then it increases significantly. The growth rate based on RBS measurements is 0.24 Å/cycle from 3 to 200 cycles and then 0.6 Å/cycle between 200 and 400 cycles. The final areal density of TiO2 film after 400 cycles is 148 ± 3 × 1015 at./cm2 which corresponds to the thickness of 17.4 ± 0.4 nm. The modification of the polyimide surface by etching prior to the deposition did not have an effect on the Al2O3 and TiO2 growth.

  12. Nucleation and growth of microdroplets of ionic liquids deposited by physical vapor method onto different surfaces

    Science.gov (United States)

    Costa, José C. S.; Coelho, Ana F. S. M. G.; Mendes, Adélio; Santos, Luís M. N. B. F.

    2018-01-01

    Nanoscience and technology has generated an important area of research in the field of properties and functionality of ionic liquids (ILs) based materials and their thin films. This work explores the deposition process of ILs droplets as precursors for the fabrication of thin films, by means of physical vapor deposition (PVD). It was found that the deposition (by PVD on glass, indium tin oxide, graphene/nickel and gold-coated quartz crystal surfaces) of imidazolium [C4mim][NTf2] and pyrrolidinium [C4C1Pyrr][NTf2] based ILs generates micro/nanodroplets with a shape, size distribution and surface coverage that could be controlled by the evaporation flow rate and deposition time. No indication of the formation of a wetting-layer prior to the island growth was found. Based on the time-dependent morphological analysis of the micro/nanodroplets, a simple model for the description of the nucleation process and growth of ILs droplets is presented. The proposed model is based on three main steps: minimum free area to promote nucleation; first order coalescence; second order coalescence.

  13. Zero net growth in a membrane bioreactor with complete sludge retention.

    Science.gov (United States)

    Laera, G; Pollice, A; Saturno, D; Giordano, C; Lopez, A

    2005-12-01

    A bench-scale membrane bioreactor was operated with complete sludge retention in order to evaluate biological processes and biomass characteristics over the long term. The investigation was carried out by feeding a bench-scale plant with real sewage under constant volumetric loading rate (VLR = 1.2 gCOD L(react)(-1) h(-1)). Biological processes were monitored by measuring substrate removal efficiencies and biomass-related parameters. The latter included bacterial activity as determined through respirometric tests specifically aimed at investigating long term heterotrophic and nitrifying activity. After about 180 days under the imposed operating conditions, the system reached equilibrium conditions with constant VSS concentration of 16-18gL(-1), organic loading rate (OLR) below 0.1 gCOD gVSS(-1) d(-1) and specific respiration rates of 2-3 mgO2 gVSS(-1) h(-1). These conditions were maintained for more than 150 days, confirming that an equilibrium had been achieved between biomass growth, endogenous metabolism, and solubilization of inorganic materials.

  14. Effects of elevated CO2 and increased nitrogen deposition on photosynthesis and growth of understory plants in spruce model ecosystems.

    Science.gov (United States)

    Hättenschwiler, Stephan; Körner, Christian

    1996-04-01

    We studied the effects of atmospheric CO2 enrichment (280, 420 and 560 μl CO2 l-1) and increased N deposition (0,30 and 90 kg ha-1 year-1) on the spruce-forest understory species Oxalis acetosella, Homogyne alpina and Rubus hirtus. Clones of these species formed the ground cover in nine 0.7 m2 model ecosystems with 5-year-old Picea abies trees (leaf area index of approx 2.2). Communities grew on natural forest soil in a simulated montane climate. Independently of N deposition, the rate of light-saturated net photosynthesis of leaves grown and measured at 420 μl CO2 l-1 was higher in Oxalis and in Homogyne, but was not significantly different in Rubus compared to leaves grown and measured at the pre-industrial CO2 concentration of 280 μl l-1. Remarkably, further CO2 enrichment to 560 μl l-1 caused no additional increase of CO2 uptake. With increasing CO2 supply concentrations of non-structural carbohydrates in leaves increased and N concentrations decreased in all species, whereas N deposition had no significant effect on these traits. Above-ground biomass and leaf area production were not significantly affected by elevated CO2 in the more vigorously growing species O. acetosella and R. hirtus, but the "slow growing" H. alpina produced almost twice as much biomass and 50% more leaf area per plant under 420 μl CO2 l-1 compared to 280 μl l-1 (again no further stimulation at 560 μl l-1). In contrast, increased N addition stimulated growth in Oxalis and Rubus but had no effect on Homogyne. In Oxalis (only) biomass per plant was positively correlated with microhabitat quantum flux density at low CO2, but not at high CO2 indicating carbon saturation. On the other hand, the less shade-tolerant Homogyne profited from CO2 enrichment at all understory light levels facilitating its spread into more shady micro-habitats under elevated CO2. These species-specific responses to CO2 and N deposition will affect community structure. The non-linear responses to elevated CO2 of

  15. Growth study of indium-catalyzed silicon nanowires by plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Zardo, I.; Conesa-Boj, S.; Estradé, S.; Yu, L.; Peiro, F.; Roca I Cabarrocas, P.; Morante, J. R.; Arbiol, J.; Fontcuberta I Morral, A.

    2010-07-01

    Indium was used as a catalyst for the synthesis of silicon nanowires in a plasma enhanced chemical vapor deposition reactor. In order to foster the catalytic activity of indium, the indium droplets had to be exposed to a hydrogen plasma prior to nanowire growth in a silane plasma. The structure of the nanowires was investigated as a function of the growth conditions by electron microscopy and Raman spectroscopy. The nanowires were found to crystallize along the , or growth direction. When growing on the and directions, they revealed a similar crystal quality and the presence of a high density of twins along the {111} planes. The high density and periodicity of these twins lead to the formation of hexagonal domains inside the cubic structure. The corresponding Raman signature was found to be a peak at 495 cm-1, in agreement with previous studies. Finally, electron energy loss spectroscopy indicates an occasional migration of indium during growth.

  16. Chemical vapor deposition of carbon nanotubes: a review on growth mechanism and mass production.

    Science.gov (United States)

    Kumar, Mukul; Ando, Yoshinori

    2010-06-01

    This review article deals with the growth mechanism and mass production of carbon nanotubes (CNTs) by chemical vapor deposition (CVD). Different aspects of CNT synthesis and growth mechanism are reviewed in the light of latest progresses and understandings in the field. Materials aspects such as the roles of hydrocarbon, catalyst and catalyst support are discussed. Many new catalysts and new carbon sources are described. Growth-control aspects such as the effects of temperature, vapor pressure and catalyst concentration on CNT diameter distribution and single- or multi-wall formation are explained. Latest reports of metal-catalyst-free CNT growth are considered. The mass-production aspect is discussed from the perspective of a sustainable CNT technology. Existing problems and challenges of the process are addressed with future directions.

  17. Comprehensive study of ZnO nanostructures grown using chemical bath deposition: from growth to application

    Science.gov (United States)

    Urgessa, Z. N.; Murape, D. M.; Oluwafemi, O. S.; Venter, A.; Wagner, M.; Botha, J. R.

    2011-12-01

    ZnO nanostructures were grown using a simple and environmentally friendly chemical bath deposition technique on pre-treated p-type silicon substrate at temperatures below 100°C. The effects of growth parameters like seed layer density, growth time, growth temperature, precursor concentration and annealing temperature on the structural, morphological, electrical and optical properties of ZnO nanorods were systematically studied using field emission scanning electron microscopy, X-ray diffraction, photoluminescence spectroscopy and current-voltage measurements. A variety of architectures is demonstrated, ranging from single crystalline nanoparticles and c-axis orientated nanorods to highly compact crystalline thin films. Post-growth annealing at different temperatures profoundly affects the optical properties of the nanorods by, for example, reducing hydrogen- and intrinsic defect-related emission. The rectifying properties of the ZnO/Si heterojunction are discussed.

  18. AxBAxB… pulsed atomic layer deposition: Numerical growth model and experiments

    Science.gov (United States)

    Muneshwar, Triratna; Cadien, Ken

    2016-02-01

    Atomic layer deposition (ALD) is widely used for the fabrication of advanced semiconductor devices and related nanoscale structures. During ALD, large precursor doses (>1000 L per pulse) are often required to achieve surface saturation, of which only a small fraction is utilized in film growth while the rest is pumped from the system. Since the metal precursor constitutes a significant cost of ALD, strategies to enhance precursor utilization are essential for the scaling of ALD processes. In the precursor reaction step, precursor physisorption is restricted by steric hindrance (mA1) from ligands on the precursor molecules. On reaction, some of these ligands are removed as by-products resulting in chemisorbed species with reduced steric hindrance (mA1 → mA2, where mA2 mA1) and some of the initially hindered surface reaction sites becoming accessible for further precursor physisorption. To utilize these additional reaction sites, we propose a generalized AxBAxB… pulsed deposition where the total precursor dose (ΦA) is introduced as multiple x (x > 1, x ∈ I) short-pulses rather than a single pulse. A numerical first-order surface reaction kinetics growth model is presented and applied to study the effect of AxBAxB… pulsed ALD on the growth per cycle (GPC). The model calculations predict higher GPC for AxBAxB… pulsing than with ABAB… deposition. In agreement with the model predictions, with AxBAxB… pulsed deposition, the GPC was found to increase by ˜46% for ZrN plasma enhanced ALD (PEALD), ˜49% for HfO2 PEALD, and ˜8% for thermal Al2O3 ALD with respect to conventional ABAB… pulsed growth.

  19. Growth and deposition of body components of intermediate and high performance broilers

    OpenAIRE

    Henn, JD; Bockor, L; Ribeiro, AML; Coldebella, A; Kessler, A de M

    2014-01-01

    The objectives of the present study were to determine the parameters of Gompertz equations and to determine curves and growth rate, feed intake and body component deposition, as well as allometric coefficients of body water, protein, and fat relative to live weight of male and female broilers of intermediate performance (C44) and high performance (Cobb-500) genetic strains. In total, 384 one-d-old chicks were distributed into four treatments: male Cobb 500, male C44, female Cobb 500, and fema...

  20. Synthesis, deposition and crystal growth of CZTS nanoparticles onto ceramic tiles

    Directory of Open Access Journals (Sweden)

    Ivan Calvet

    2015-09-01

    Full Text Available The work presents a simple solvothermal method for CZTS nanoparticles preparation using hexadecylamine (HDA as a capping agent. The as-prepared CZTS powder was deposited as ink using Doctor Blade technique onto ceramic tile, as a substrate substituting the typical soda-lime glass. The as-prepared film was thermal treated at different temperatures in order to enhance the thin film crystallinity. CZTS crystal growth onto ceramic tile was obtained successfully for the first time.

  1. Time variant layer control in atmospheric pressure chemical vapor deposition based growth of graphene

    KAUST Repository

    Qaisi, Ramy M.

    2013-04-01

    Graphene is a semi-metallic, transparent, atomic crystal structure material which is promising for its high mobility, strength and transparency - potentially applicable for radio frequency (RF) circuitry and energy harvesting and storage applications. Uniform (same number of layers), continuous (not torn or discontinuous), large area (100 mm to 200 mm wafer scale), low-cost, reliable growth are the first hand challenges for its commercialization prospect. We show a time variant uniform (layer control) growth of bi- to multi-layer graphene using atmospheric chemical vapor deposition system. We use Raman spectroscopy for physical characterization supported by electrical property analysis. © 2013 IEEE.

  2. Growth of Antiperovskite Oxide Ca3SnO Films by Pulsed Laser Deposition

    OpenAIRE

    Minohara, Makoto; Yukawa, Ryu; Kitamura, Miho; Kumai, Reiji; Murakami, Youichi; Kumigashira, Hiroshi

    2017-01-01

    We report the epitaxial growth of Ca3SnO antiperovskite oxide films on (001)-oriented cubic yttria-stabilized zirconia (YSZ) substrates by using a conventional pulsed laser deposition (PLD) technique. In this work, a sintered Ca3SnO pellet is used as the ablation target. X-ray diffraction measurements demonstrate the (001) growth of Ca3SnO films with the antiperovskite structure and a cube-on-cube orientation relationship to the YSZ substrate. The successful synthesis of the antiperovskite ph...

  3. Chemical etching of copper foils for single-layer graphene growth by chemical vapor deposition

    Science.gov (United States)

    Yoshihara, Naoki; Noda, Masaru

    2017-10-01

    Chemical etching on copper surface is essential as a pre-treatment for single-layer graphene growth by chemical vapor deposition (CVD). Here, we investigated the effect of chemical etching treatment on copper foils for single-layer graphene CVD growth. The chemical etching conditions, such as the type of chemical etchants and the treatment time, were found to strongly influence the graphene domain size. Moreover, a drastic change in the layer structure of graphene sheets, which was attributed to the surface morphology of the etched copper foil, was confirmed by graphene transmittance and Raman mapping measurements.

  4. Root uptake of radionuclides following their acute soil depositions during the growth of selected food crops

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Yong-Ho [Nuclear Environment Safety Research Division, Korea Atomic Energy Research Institute, P.O. Box 105, Yuseong, Daejeon, 305-600 (Korea, Republic of)], E-mail: yhchoi1@kaeri.re.kr; Lim, Kwang-Muk; Jun, In; Park, Doo-Won; Keum, Dong-Kwon; Lee, Chang-Woo [Nuclear Environment Safety Research Division, Korea Atomic Energy Research Institute, P.O. Box 105, Yuseong, Daejeon, 305-600 (Korea, Republic of)

    2009-09-15

    Greenhouse experiments were performed to investigate the root uptake of radionuclides following their acute soil deposition during the growth of several food crops. For this purpose, the soil under the standing plants was contaminated without any direct contamination of their stems or leaves. The intention of this design was to differentiate foilar uptake and root uptake subsequent to a radionuclide deposition during the vegetation period. Soil-to-plant transfer of a radionuclide was quantified with its aggregated transfer factors specified for the time periods from deposition until harvest (T{sub ag}{sup a}, m{sup 2} kg{sup -1}). Deposition time-dependent T{sub ag}{sup a} values of Mn, Co, Sr and Cs for selected crop species were measured in an acid sandy soil. For rice and Chinese cabbage, HTO experiments were also carried out using this soil. Particularly for rice, experiments with various paddy soils were also performed for {sup 90}Sr and {sup 137}Cs. The obtained T{sub ag}{sup a} values varied considerably with the radionuclides, plant species, and times of deposition. Recommendations about, and limitations in, the use of the T{sub ag}{sup a} values were discussed.

  5. Rapid and highly efficient growth of graphene on copper by chemical vapor deposition of ethanol

    Energy Technology Data Exchange (ETDEWEB)

    Lisi, Nicola, E-mail: nicola.lisi@enea.it [ENEA, Materials Technology Unit, Surface Technology Laboratory, Casaccia Research Centre, Via Anguillarese 301, 00123 Rome (Italy); Buonocore, Francesco; Dikonimos, Theodoros; Leoni, Enrico [ENEA, Materials Technology Unit, Surface Technology Laboratory, Casaccia Research Centre, Via Anguillarese 301, 00123 Rome (Italy); Faggio, Giuliana; Messina, Giacomo [Dipartimento di Ingegneria dell' Informazione, delle Infrastrutture e dell' Energia Sostenibile (DIIES), Università “Mediterranea” di Reggio Calabria, 89122 Reggio Calabria (Italy); Morandi, Vittorio; Ortolani, Luca [CNR-IMM Bologna, Via Gobetti 101, 40129 Bologna (Italy); Capasso, Andrea [ENEA, Materials Technology Unit, Surface Technology Laboratory, Casaccia Research Centre, Via Anguillarese 301, 00123 Rome (Italy)

    2014-11-28

    The growth of graphene by chemical vapor deposition on metal foils is a promising technique to deliver large-area films with high electron mobility. Nowadays, the chemical vapor deposition of hydrocarbons on copper is the most investigated synthesis method, although many other carbon precursors and metal substrates are used too. Among these, ethanol is a safe and inexpensive precursor that seems to offer favorable synthesis kinetics. We explored the growth of graphene on copper from ethanol, focusing on processes of short duration (up to one min). We investigated the produced films by electron microscopy, Raman and X-ray photoemission spectroscopy. A graphene film with high crystalline quality was found to cover the entire copper catalyst substrate in just 20 s, making ethanol appear as a more efficient carbon feedstock than methane and other commonly used precursors. - Highlights: • Graphene films were grown by fast chemical vapor deposition of ethanol on copper. • High-temperature/short-time growth produced highly crystalline graphene. • The copper substrate was entirely covered by a graphene film in just 20 s. • Addition of H{sub 2} had a negligible effect on the crystalline quality.

  6. "Prospects and Policies for the U.S. Economy: Why Net Exports Must Now Be the Motor for U.S. Growth"

    OpenAIRE

    Wynne Godley; Alex Izurieta; Gennaro Zezza

    2004-01-01

    The US economy has grown reasonably fast since the second half of 2003 and the general expectation seems to be that satisfactory growth will continue more or less indefinitely. This paper argues that the expansion may, indeed, continue through 2004 and for some time beyond. But with the government and external deficits both so large and the private sector so heavily indebted, satisfactory growth in the medium term cannot be achieved without a large, sustained and discontinuous increase in net...

  7. Growth evolution of AlN films on silicon (111) substrates by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Haiyan; Wang, Wenliang; Yang, Weijia; Zhou, Shizhong; Lin, Zhiting [State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510641 (China); Li, Guoqiang, E-mail: msgli@scut.edu.cn [State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510641 (China); Department of Electronic Materials, South China University of Technology, Guangzhou 510641 (China)

    2015-05-14

    AlN films with various thicknesses have been grown on Si(111) substrates by pulsed laser deposition (PLD). The surface morphology and structural property of the as-grown AlN films have been investigated carefully to comprehensively explore the epitaxial behavior. The ∼2 nm-thick AlN film initially grown on Si substrate exhibits an atomically flat surface with a root-mean-square surface roughness of 0.23 nm. As the thickness increases, AlN grains gradually grow larger, causing a relatively rough surface. The surface morphology of ∼120 nm-thick AlN film indicates that AlN islands coalesce together and eventually form AlN layers. The decreasing growth rate from 240 to 180 nm/h is a direct evidence that the growth mode of AlN films grown on Si substrates by PLD changes from the islands growth to the layer growth. The evolution of AlN films throughout the growth is studied deeply, and its corresponding growth mechanism is hence proposed. These results are instructional for the growth of high-quality nitride films on Si substrates by PLD, and of great interest for the fabrication of AlN-based devices.

  8. Growth mechanism of long aligned multiwall carbon nanotube arrays by water-assisted chemical vapor deposition.

    Science.gov (United States)

    Yun, YeoHeung; Shanov, Vesselin; Tu, Yi; Subramaniam, Srinivas; Schulz, Mark J

    2006-11-30

    Highly aligned arrays of multiwalled carbon nanotube (MWCNT) on layered Si substrates have been synthesized by chemical vapor deposition (CVD). The effect of the substrate design and the process parameters on the growth mechanism were studied. Adding water vapor to the reaction gas mixture of hydrogen and ethylene enhanced the growth which led to synthesis of longer CNT arrays with high density. Environmental scanning electron microscopy (ESEM), energy-dispersive spectroscopy (EDS), and atomic force microscopy (AFM) were used to analyze the CNT morphology and composition. Quadrupole mass spectroscopy (QMS) provided in-situ information on the gas spices within the reaction zone. On the basis of results, we verified the top growth mechanism and evaluated the reason of decline and stoppage of the CNT growth after extended period of deposition. Multilayered Si substrates with a top film of Al2O3, having appropriate roughness, provide favorable conditions to form catalyst islands with uniform distribution and size. Using water-assisted CVD process and optimized substrate design, our group succeeded to grow vertically aligned, patterned MWCNT up to 4-mm long. The arrays were of high purity and weak adhesion which allowed to be peeled off easily from the substrate.

  9. Dynamic Characterization of Dendrite Deposition and Growth in Li-Surface by Electrochemical Impedance Spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez-Maya, R; Rosas, O; Saunders, J; Castaneda, H

    2015-01-13

    The evolution of dendrite formation is characterized by DC and AC electrochemical techniques. Interfacial mechanisms for lithium deposition are described and quantified by electrochemical impedance spectroscopy (EIS) between a lithium electrode and a graphite electrode. The initiation and growth of dendrites in the lithium surface due to the cathodic polarization conditions following anodic dissolution emulate long term cycling process occurring in the lithium electrodes. The dendrite initiation at the lithium/organic electrolyte interface is proposed to be performed through a combination of layering and interfacial reactions during different cathodic conditions. The growth is proposed to be performed by surface geometrical deposition. In this work, we use EIS in galvanostatic mode to assess the initiation and growth stages of dendrites by the accumulation of precipitates formed under different current conditions. The lithium/organic solvent experimental system using frequency domain techniques is validated by the theoretical approach using a deterministic model that accounts for the faradaic processes at the interface assuming a coverage fraction of the electrodic surface affected by the dendritic growth. (C) 2015 The Electrochemical Society. All rights reserved.

  10. Selective growth of graphene in layer-by-layer via chemical vapor deposition

    Science.gov (United States)

    Park, Jaehyun; An, Hyosub; Choi, Dong-Chul; Hussain, Sajjad; Song, Wooseok; An, Ki-Seok; Lee, Won-Jun; Lee, Naesung; Lee, Wan-Gyu; Jung, Jongwan

    2016-07-01

    Selective and precise control of the layer number of graphene remains a critical issue for the practical applications of graphene. First, it is highly challenging to grow a continuous and uniform few-layer graphene since once the monolayer graphene fully covers a copper (Cu) surface, the growth of the second layer stops, resulting in mostly nonhomogeneous films. Second, from the selective adlayer growth point of view, there is no clear pathway for achieving this. We have developed the selective growth of a graphene adlayer in layer-by-layer via chemical vapor deposition (CVD) which makes it possible to stack graphene on a specific position. The key idea is to deposit a thin Cu layer (~40 nm thick) on pre-grown monolayer graphene and to apply additional growth. The thin Cu atop the graphene/Cu substrate acts as a catalyst to decompose methane (CH4) gas during the additional growth. The adlayer is grown selectively on the pre-grown graphene, and the thin Cu is removed through evaporation during CVD, eventually forming large-area and uniform double layer graphene. With this technology, highly uniform graphene films with precise thicknesses of 1 to 5 layers and graphene check patterns with 1 to 3 layers were successfully demonstrated. This method provides precise LBL growth for a uniform graphene film and a technique for the design of new graphene devices.Selective and precise control of the layer number of graphene remains a critical issue for the practical applications of graphene. First, it is highly challenging to grow a continuous and uniform few-layer graphene since once the monolayer graphene fully covers a copper (Cu) surface, the growth of the second layer stops, resulting in mostly nonhomogeneous films. Second, from the selective adlayer growth point of view, there is no clear pathway for achieving this. We have developed the selective growth of a graphene adlayer in layer-by-layer via chemical vapor deposition (CVD) which makes it possible to stack graphene

  11. Anisotropic growth mechanism of tungsten diselenide domains using chemical vapor deposition method

    Science.gov (United States)

    Lee, Yoobeen; Jeong, Heekyung; Park, Yi-Seul; Han, Seulki; Noh, Jaegeun; Lee, Jin Seok

    2018-02-01

    Anisotropic transition metal dichalcogenide (TMDC) domains have stimulated a growing interest mainly due to their electronic properties that depend on the size, shape, and edge structures of the domains. In this work, we investigated the anisotropic morphogenesis and edge terminations of tungsten diselenide (WSe2) domains grown on sapphire substrates by chemical vapor deposition (CVD) using tungsten oxide (WO3) and selenium (Se) powders as precursors. We varied the amount of Se powder and growth temperature during the CVD process, which in turn caused variations in the growth mechanism and kinetic energies of precursors. We succeeded in synthesizing hexagonal, square, circular, and triangular anisotropic WSe2 domains. They were characterized using scanning electron microscopy (SEM), Raman spectroscopy, photoluminescence (PL) analyses, and atomic force microscopy (AFM). Furthermore, we proposed the growth mechanism of anisotropic WSe2 domains with different edge terminations based on experimental observations through scanning tunneling microscope (STM).

  12. Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors

    Science.gov (United States)

    Biyikli, Necmi; Haider, Ali

    2017-09-01

    In this paper, we present the progress in the growth of nanoscale semiconductors grown via atomic layer deposition (ALD). After the adoption by semiconductor chip industry, ALD became a widespread tool to grow functional films and conformal ultra-thin coatings for various applications. Based on self-limiting and ligand-exchange-based surface reactions, ALD enabled the low-temperature growth of nanoscale dielectric, metal, and semiconductor materials. Being able to deposit wafer-scale uniform semiconductor films at relatively low-temperatures, with sub-monolayer thickness control and ultimate conformality, makes ALD attractive for semiconductor device applications. Towards this end, precursors and low-temperature growth recipes are developed to deposit crystalline thin films for compound and elemental semiconductors. Conventional thermal ALD as well as plasma-assisted and radical-enhanced techniques have been exploited to achieve device-compatible film quality. Metal-oxides, III-nitrides, sulfides, and selenides are among the most popular semiconductor material families studied via ALD technology. Besides thin films, ALD can grow nanostructured semiconductors as well using either template-assisted growth methods or bottom-up controlled nucleation mechanisms. Among the demonstrated semiconductor nanostructures are nanoparticles, nano/quantum-dots, nanowires, nanotubes, nanofibers, nanopillars, hollow and core-shell versions of the afore-mentioned nanostructures, and 2D materials including transition metal dichalcogenides and graphene. ALD-grown nanoscale semiconductor materials find applications in a vast amount of applications including functional coatings, catalysis and photocatalysis, renewable energy conversion and storage, chemical sensing, opto-electronics, and flexible electronics. In this review, we give an overview of the current state-of-the-art in ALD-based nanoscale semiconductor research including the already demonstrated and future applications.

  13. Controlled Growth of Organic Semiconductor Films Using Electrospray Vapor-Liquid-Solid Deposition

    Science.gov (United States)

    Shaw, Daniel; Bufkin, Kevin; Johnson, Brad; Patrick, David

    2010-03-01

    Interest in low molecular weight organic semiconductors (OS) for applications such as light-emitting diodes, photovoltaics, and other technologies stems in part from their prospects for enabling significantly reduced manufacturing costs compared to traditional inorganic semiconductors. However many of the best performing prototype devices produced so far have involved expensive or time-consuming fabrication methods, such as the use of single crystals or thin films deposited under high vacuum conditions. New methods are needed capable of rapidly and inexpensively producing high quality polycrystalline films, preferably involving near-ambient conditions. This poster will present studies of one such approach based on an electrospray vapor-liquid-solid growth technique. The method produces polycrystalline OS films deposited via atmospheric-pressure sublimation from a carrier gas (argon) which is partially ionized by a corona discharge. Vapor-phase molecules are then attracted to a charged substrate coated with a thin liquid solvent layer, in which they dissolve and grow as crystals, producing films with large grain sizes. This poster will describe the electrostatic and hydrodynamic features of the deposition mechanism, and the growth kinetics of the resulting polycrystalline films.

  14. Engineering of InN epilayers by repeated deposition of ultrathin layers in pulsed MOCVD growth

    Science.gov (United States)

    Mickevičius, J.; Dobrovolskas, D.; Steponavičius, T.; Malinauskas, T.; Kolenda, M.; Kadys, A.; Tamulaitis, G.

    2018-01-01

    Capabilities of repeated deposition of ultrathin layers by pulsed metalorganic chemical vapor deposition (MOCVD) for improvement of structural and luminescence properties of InN thin films on GaN/sapphire templates were studied by varying the growth temperature and the durations of pulse and pause in the delivery of In precursor. X-ray diffraction, atomic force microscopy, and spatially-resolved photoluminescence (PL) spectroscopy were exploited to characterize the structural quality, surface morphology and luminescence properties. Better structural quality is achieved by using longer trimethylindium pulses. However, it is shown that the luminescence properties of InN epilayers correlate with the pause and pulse ratio rather than with their absolute lengths, and the deposition of 1.5-2 monolayers of InN during one growth cycle is optimal to achieve the highest PL intensity. Moreover, the use of temperature ramping enabled achieving the highest PL intensity and the smallest blue shift of the PL band. The luminescence parameters are linked with the structural properties, and domain-like patterns of InN layers are revealed.

  15. Saharan Dust Deposition May Affect Phytoplankton Growth in the Mediterranean Sea at Ecological Time Scales

    Science.gov (United States)

    Gallisai, Rachele; Peters, Francesc; Volpe, Gianluca; Basart, Sara; Baldasano, José Maria

    2014-01-01

    The surface waters of the Mediterranean Sea are extremely poor in the nutrients necessary for plankton growth. At the same time, the Mediterranean Sea borders with the largest and most active desert areas in the world and the atmosphere over the basin is subject to frequent injections of mineral dust particles. We describe statistical correlations between dust deposition over the Mediterranean Sea and surface chlorophyll concentrations at ecological time scales. Aerosol deposition of Saharan origin may explain 1 to 10% (average 5%) of seasonally detrended chlorophyll variability in the low nutrient-low chlorophyll Mediterranean. Most of the statistically significant correlations are positive with main effects in spring over the Eastern and Central Mediterranean, conforming to a view of dust events fueling needed nutrients to the planktonic community. Some areas show negative effects of dust deposition on chlorophyll, coinciding with regions under a large influence of aerosols from European origin. The influence of dust deposition on chlorophyll dynamics may become larger in future scenarios of increased aridity and shallowing of the mixed layer. PMID:25333783

  16. Room temperature growth of biaxially aligned yttria-stabilized zirconia films on glass substrates by pulsed-laser deposition

    CERN Document Server

    Li Peng; Mazumder, J

    2003-01-01

    Room temperature deposition of biaxially textured yttria-stabilized zirconia (YSZ) films on amorphous glass substrates was successfully achieved by conventional pulsed-laser deposition. The influence of the surrounding gases, their pressure and the deposition time on the structure of the films was studied. A columnar growth process was revealed based on the experimental results. The grown biaxial texture appears as a kind of substrate independence, which makes it possible to fabricate in-plane aligned YSZ films on various substrates.

  17. Role of hydrogen in graphene chemical vapor deposition growth on a copper surface.

    Science.gov (United States)

    Zhang, Xiuyun; Wang, Lu; Xin, John; Yakobson, Boris I; Ding, Feng

    2014-02-26

    Synthesizing bilayer graphene (BLG), which has a band gap, is an important step in graphene application in microelectronics. Experimentally, it was broadly observed that hydrogen plays a crucial role in graphene chemical vapor deposition (CVD) growth on a copper surface. Here, by using ab initio calculations, we have revealed a crucial role of hydrogen in graphene CVD growth, terminating the graphene edges. Our study demonstrates the following. (i) At a low hydrogen pressure, the graphene edges are not passivated by H and thus tend to tightly attach to the catalyst surface. As a consequence, the diffusion of active C species into the area beneath the graphene top layer (GTL) is prohibited, and therefore, single-layer graphene growth is favored. (ii) At a high hydrogen pressure, the graphene edges tend to be terminated by H, and therefore, its detachment from the catalyst surface favors the diffusion of active C species into the area beneath the GTL to form the adlayer graphene below the GTL; as a result, the growth of BLG or few-layer graphene (FLG) is preferred. This insightful understanding reveals a crucial role of H in graphene CVD growth and paves a way for the controllable synthesis of BLG or FLG. Besides, this study also provides a reasonable explanation for the hydrogen pressure-dependent graphene CVD growth behaviors on a Cu surface.

  18. Controllable poly-crystalline bilayered and multilayered graphene film growth by reciprocal chemical vapor deposition.

    Science.gov (United States)

    Wu, Qinke; Jung, Seong Jun; Jang, Sung Kyu; Lee, Joohyun; Jeon, Insu; Suh, Hwansoo; Kim, Yong Ho; Lee, Young Hee; Lee, Sungjoo; Song, Young Jae

    2015-06-21

    We report the selective growth of large-area bilayered graphene film and multilayered graphene film on copper. This growth was achieved by introducing a reciprocal chemical vapor deposition (CVD) process that took advantage of an intermediate h-BN layer as a sacrificial template for graphene growth. A thin h-BN film, initially grown on the copper substrate using CVD methods, was locally etched away during the subsequent graphene growth under residual H2 and CH4 gas flows. Etching of the h-BN layer formed a channel that permitted the growth of additional graphene adlayers below the existing graphene layer. Bilayered graphene typically covers an entire Cu foil with domain sizes of 10-50 μm, whereas multilayered graphene can be epitaxially grown to form islands a few hundreds of microns in size. This new mechanism, in which graphene growth proceeded simultaneously with h-BN etching, suggests a potential approach to control graphene layers for engineering the band structures of large-area graphene for electronic device applications.

  19. Rapid thermal chemical vapor deposition growth of nanometer-thin SiC on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Steckl, A.J.; Li, J.P. (Univ. of Cincinnati, OH (United States))

    1992-08-28

    Rapid thermal chemical vapor deposition growth of [beta]-SiC ultrathin films on Si (100) was achieved using the carbonization reaction of the silicon substrate with C[sub 3]H[sub 8] gas. Growth rates of 0.5-2 nm s[sup -1] have been achieved at 1100-1300degC using C[sub 3]H[sub 8] flow rates of 7-9 standard cm[sup 3] min[sup -1]. X-ray and electron diffraction indicate single-crystal growth. Therefore nanometer-scale SiC films can be grown by controlling the reaction time to a few seconds. The activation energy at atmospheric pressure is 3.12 eV. The growth rate was found to decrease significantly at higher C[sub 3]H[sub 8] flow rates, leading to films of constant thickness beyond a certain critical reaction time. Using this regime of self-limiting growth, SiC films of 3-5 nm have been grown with relatively little sensitivity to the growth time. (orig.).

  20. Bismuth nanowire growth under low deposition rate and its ohmic contact free of interface damage

    Directory of Open Access Journals (Sweden)

    Ye Tian

    2012-03-01

    Full Text Available High quality bismuth (Bi nanowire and its ohmic contact free of interface damage are quite desired for its research and application. In this paper, we propose one new way to prepare high-quality single crystal Bi nanowires at a low deposition rate, by magnetron sputtering method without the assistance of template or catalyst. The slow deposition growth mechanism of Bi nanowire is successfully explained by an anisotropic corner crossing effect, which is very different from existing explanations. A novel approach free of interface damage to ohmic contact of Bi nanowire is proposed and its good electrical conductivity is confirmed by I-V characteristic measurement. Our method provides a quick and convenient way to produce high-quality Bi nanowires and construct ohmic contact for desirable devices.

  1. Heteroepitaxial growth of 3-5 semiconductor compounds by metal-organic chemical vapor deposition for device applications

    Science.gov (United States)

    Collis, Ward J.; Abul-Fadl, Ali

    1988-01-01

    The purpose of this research is to design, install and operate a metal-organic chemical vapor deposition system which is to be used for the epitaxial growth of 3-5 semiconductor binary compounds, and ternary and quaternary alloys. The long-term goal is to utilize this vapor phase deposition in conjunction with existing current controlled liquid phase epitaxy facilities to perform hybrid growth sequences for fabricating integrated optoelectronic devices.

  2. Studies in graphene growth and processing using atmospheric pressure chemical vapor deposition

    Science.gov (United States)

    Merrell, Andrew Nephi

    This dissertation focuses on graphene, a promising two-dimensional, carbon material with many favorable electronic properties. The prospect of implementing graphene into a wide variety of potential device applications is enticing, but many factors stand in the way before this goal is realized. Atmospheric pressure chemical vapor deposition (APCVD) is a graphene production method that may be compatible with large-scale growth. Motivated by the need to more fully understand APCVD growth of graphene, a system is constructed, and several studies are carried out. Specifically, a detailed study is presented which involves the effects of hydrogen and contaminant oxygen in APCVD-grown graphene. The research shows that hydrogen is an important factor to control during the cooling stage of APCVD, as it has a direct effect on the formation of oxides on the copper foil (copper is used as the catalyst for graphene growth in APCVD). It is also determined that hydrogen, as well as the reaction chamber, play an important role in the formation of SiO2 nanoparticles, which accumulate on the copper surface during graphene growth. Methods for patterning and processing graphene are also explored in this dissertation, as such methods are crucial in the realization of graphene-based devices. The method of e-beam assisted metal deposition used in conjunction with masked-CVD growth is proposed as an effective alternative to conventional processing methods such as photolithography and electron-beam lithography. The proposed methods have several advantages, which pave the way for lowering graphene/metal contact resistance, and preserving the intrinsic properties of graphene during device fabrication.

  3. Development of a new laser heating system for thin film growth by chemical vapor deposition

    Science.gov (United States)

    Fujimoto, Eiji; Sumiya, Masatomo; Ohnishi, Tsuyoshi; Lippmaa, Mikk; Takeguchi, Masaki; Koinuma, Hideomi; Matsumoto, Yuji

    2012-09-01

    We have developed a new laser heating system for thin film growth by chemical vapor deposition (CVD). A collimated beam from a high-power continuous-wave 808 nm semiconductor laser was directly introduced into a CVD growth chamber without an optical fiber. The light path of the heating laser inside the chamber was isolated mechanically from the growth area by bellows to protect the optics from film coating. Three types of heat absorbers, (10 × 10 × 2 mm3) consisting of SiC, Ni/NiOx, or pyrolytic graphite covered with pyrolytic BN (PG/PBN), located at the backside of the substrate, were tested for heating performance. It was confirmed that the substrate temperature could reach higher than 1500 °C in vacuum when a PG/PBN absorber was used. A wide-range temperature response between 400 °C and 1000 °C was achieved at high heating and cooling rates. Although the thermal energy loss increased in a H2 gas ambient due to the higher thermal conductivity, temperatures up to 1000°C were achieved even in 200 Torr H2. We have demonstrated the capabilities of this laser heating system by growing ZnO films by metalorganic chemical vapor deposition. The growth mode of ZnO films was changed from columnar to lateral growth by repeated temperature modulation in this laser heating system, and consequently atomically smooth epitaxial ZnO films were successfully grown on an a-plane sapphire substrate.

  4. Growth morphology of nanoscale sputter-deposited Au films on amorphous soft polymeric substrates

    Science.gov (United States)

    Ruffino, F.; Torrisi, V.; Marletta, G.; Grimaldi, M. G.

    2011-06-01

    The growth of a room-temperature sputter-deposited thin Au film on two soft polymeric substrates, polystyrene (PS) and poly(methyl methacrylate) (PMMA), from nucleation to formation of a continuous film is investigated by means of atomic force microscopy. In particular, we studied the surface morphology evolution of the film as a function of the deposition time observing an initial Au three-dimensional island-type growth. Then the Au film morphology evolves, with increasing deposition time, from hemispherical islands to partially coalesced worm-like island structures, to percolation, and finally to a continuous and rough film. The overall Au morphology evolution is discussed in the framework of the interrupted coalescence model, allowing us to evaluate the island critical radius for the partial coalescence R c=8.7±0.9 nm for Au on PS and R c=7.6±0.8 nm for Au on PMMA. Furthermore, the application of the kinetic freezing model allows us to evaluate the room-temperature surface diffusion coefficient D s≈1.8×10-18 m2/s for Au on PS and D s≈1.1×10-18 m2/s for Au on PMMA. The application of the Vincent model allows us, also, to evaluate the critical coverage (at which the percolation occurs) P c=61% for Au on PS and P c=56% for Au on PMMA. Finally, the dynamic scaling theory of a growing interface was applied to characterize the kinetic roughening of the Au film on both PMMA and PS. Such analyses allow us to evaluate the dynamic scaling, growth, and roughness exponents z=3.8±0.4, β=0.28±0.03, α=1.06±0.05 for the growth of Au on PS and z=4.3±0.3, β=0.23±0.03, α=1.03±0.05 for the growth of Au on PMMA, in agreement with a non-equilibrium but conservative and linear growth process in which the surface diffusion phenomenon plays a key role.

  5. Selective Growth of PZT Nanowires on Si Substrates Using Glancing Angle Pulsed Laser Deposition

    Science.gov (United States)

    Gonzalez-Acevedo, D.; Mateo, D.; Hordagoda, M.; Witanachchi, S.

    Thin films and nanostructures of the ferroelectric material Lead Zirconium Titanium Oxide (PZT) offer a multitude of applications in Piezotronics, and ferroelectric capacitor memories. While the growth of PZT thin films is well established, methodologies for the fabrication of vertically-aligned and spatially ordered PZT columns in nanoscale are not common. In this work an approach that uses a self-assembled nanoparticle template in a glancing angle pulsed laser deposition (GAPLD) process is presented. Lanthanum strontium manganite oxide (LSMO) was grown by laser ablation on a Si substrate masked by a monolayer of commercially available silica nanospheres (SNS) with diameter of 250nm self-assembled in a closed-pack hexagonal configuration (HCP) using Langmuir-Blodgett method. The HCP configuration of the mask will allows for the formation of LSMO islands on the crevices in between spheres, which will serve as seed layers for PZT growth. Scanning Electron Microscopy (SEM) was used to observe the grown PZT's morphology. Due to the ballistic shadowing effect introduced by the GAPLD, PZT columns in the form of hexagonal nanopillars evolved over the spatially ordered nanotemplate. Tunability of growth was achieved for certain PZT growth conditions. Morphological and structural properties of these structures were studied and showed a preferred orientation of growth of the (200) tetragonal/rhombohedral phase.

  6. The Net Carbon Flux due to Deforestation and Forest Re-Growth in the Brazilian Amazon: Analysis using a Process-Based Model

    Science.gov (United States)

    Hirsch, A. I.; Little, W. S.; Houghton, R. A.; Scott, N. A.; White, J. D.

    2004-01-01

    We developed a process-based model of forest growth, carbon cycling, and land cover dynamics named CARLUC (for CARbon and Land Use Change) to estimate the size of terrestrial carbon pools in terra firme (non-flooded) forests across the Brazilian Legal Amazon and the net flux of carbon resulting from forest disturbance and forest recovery from disturbance. Our goal in building the model was to construct a relatively simple ecosystem model that would respond to soil and climatic heterogeneity that allows us to study of the impact of Amazonian deforestation, selective logging, and accidental fire on the global carbon cycle. This paper focuses on the net flux caused by deforestation and forest re-growth over the period from 1970-1998. We calculate that the net flux to the atmosphere during this period reached a maximum of approx. 0.35 PgC/yr (1PgC = 1 x 10(exp I5) gC) in 1990, with a cumulative release of approx. 7 PgC from 1970- 1998. The net flux is higher than predicted by an earlier study by a total of 1 PgC over the period 1989-1 998 mainly because CARLUC predicts relatively high mature forest carbon storage compared to the datasets used in the earlier study. Incorporating the dynamics of litter and soil carbon pools into the model increases the cumulative net flux by approx. 1 PgC from 1970-1998, while different assumptions about land cover dynamics only caused small changes. The uncertainty of the net flux, calculated with a Monte-Carlo approach, is roughly 35% of the mean value (1 SD).

  7. Point island models for nucleation and growth of supported nanoclusters during surface deposition

    Science.gov (United States)

    Han, Yong; Gaudry, Émilie; Oliveira, Tiago J.; Evans, James W.

    2016-12-01

    Point island models (PIMs) are presented for the formation of supported nanoclusters (or islands) during deposition on flat crystalline substrates at lower submonolayer coverages. These models treat islands as occupying a single adsorption site, although carrying a label to track their size (i.e., they suppress island structure). However, they are particularly effective in describing the island size and spatial distributions. In fact, these PIMs provide fundamental insight into the key features for homogeneous nucleation and growth processes on surfaces. PIMs are also versatile being readily adapted to treat both diffusion-limited and attachment-limited growth and also a variety of other nucleation processes with modified mechanisms. Their behavior is readily and precisely assessed by kinetic Monte Carlo simulation.

  8. Early growth hormone treatment start in childhood growth hormone deficiency improves near adult height: analysis from NordiNet® International Outcome Study.

    Science.gov (United States)

    Polak, Michel; Blair, Jo; Kotnik, Primoz; Pournara, Effie; Pedersen, Birgitte Tønnes; Rohrer, Tilman R

    2017-11-01

    To investigate the effect of age at growth hormone (GH) treatment start on near adult height (NAH) in children with isolated GH deficiency (GHD). NordiNet® International Outcome Study (IOS) (Nbib960128), a non-interventional, multicentre study, evaluates the long-term effectiveness and safety of Norditropin® (somatropin) (Novo Nordisk A/S) in the real-life clinical setting. Patients ( n  = 172) treated to NAH (height at ≥18 years, or height velocity start (early (girls, 10; boys, >11)) and GHD severity (start (as a categorical and continuous variable) on NAH standard deviation score (SDS). Age at treatment start had a marked effect on NAH SDS; NAH SDS achieved by patients starting treatment early ( n  = 40 (boys, 70.0%); least squares mean (standard error) -0.76 (0.14)) exceeded that achieved by those starting later (intermediate, n  = 42 (boys, 57.1%); -1.14 (0.15); late, n  = 90 (boys, 68.9%); -1.21 (0.10)). Multiple regression analysis showed a significant association between NAH SDS and age at treatment start ( P  start. Early initiation of GH treatment in children with isolated GHD improves their chance of achieving their genetic height potential. © 2017 The authors.

  9. Nitride film growth morphology using remote plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Wintrebert-Fouquet, M.; Butcher, K.S.A.; Chen, P.P.T. [Physics Department, Macquarie University, Sydney, NSW 2109 (Australia); Wuhrer, R. [Microstructural Analysis Unit, Faculty of Science, University of Technology, Sydney, Broadway, NSW 2007 (Australia)

    2007-06-15

    Gallium nitride and indium nitride films have been grown by remote plasma enhanced chemical vapor deposition (RPECVD) at temperatures between 570 and 650 C for GaN and between 350 and 570 C for InN on different substrates. For GaN vast improvements in film morphology and quality have resulted from reductions in background impurities when compared to previous reports. Epitaxial material can now be grown at 650 C under optimized growth conditions. Columnar growth still occurs for growth on some substrates, however film coalescence is observed when using appropriate buffer layers and epitaxial growth can also be observed. High resolution SEM images show examples of this. The root-mean-square surface roughness of epitaxial samples, as measured using atomic force microscopy, shows values of as little as 10 Angstroms. While X-ray diffraction shows that these surfaces are not amorphous but have a strong (0001) preferred axis with FWHM limited by instrumental effects to (2{theta}) 0.085 degrees. The improvement in film quality has allowed heavily doped n-type films to be grown with an electron mobility of 160 cm{sup 2}/V.s for a carrier concentration of {proportional_to}1 x 10{sup 19} cm{sup -3} at 650 C. Moss-Burstein shifted absorption data confirms the high doping level. For InN film growth by RPECVD, columnar growth is commonly observed in the temperature region of interest for films grown directly on sapphire, however film coalescence and epitaxial films are also observed for this material. X-ray diffraction indicates very sharp (0002) peaks with FWHM of (2{theta}) 0.07 degrees. High resolution SEM images show examples of film morphology at different growth temperatures. Electron backscattered diffraction images indicate a wurtzite structure even for InN films with strong deviations from the accepted lattice parameters. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Deposition of growth layer groups in dentine tissue of captive common dolphins Delphinus delphis

    Directory of Open Access Journals (Sweden)

    Sinéad Murphy

    2014-07-01

    Full Text Available Knowledge of age structure and longevity (maximum age are essential for modelling marine mammal population dynamics. Estimation of age in common dolphins (Delphinus spp. is primarily based on counting Growth Layer Groups (GLGs in the dentine of thin, decalcified and stained sections of teeth. An annual incremental deposition rate was validated for Delphinus spp. 30-years ago through the use of tetracycline. However, it is not known if the pulp cavity becomes occluded in older individuals or GLGs continue to be deposited in dentine tissue. To investigate the deposition of GLGs in dentine tissue, teeth samples were obtained during the necropsies of two short-beaked common dolphins (Delphinus delphis that were held in captivity for 31 and 33 years in New Zealand. Individuals were captured together in Hawkes Bay, North Island, New Zealand and classified as juveniles based on physical appearance. Teeth were processed in two ageing laboratories, using four different bone decalcifiers, two sectioning techniques incorporating the use of both a freezing microtome (-20°C and paraffin microtome, and two different stains. An age was estimated for one of the dolphins, in line with that proposed based on estimated age at capture and period in captivity. However, a hypomineralised area was observed in the dentine tissue close to the pulp cavity of the second individual, preventing estimation of maximum age. The presence and structure of this anomaly is explored further within the study.

  11. Postnatal high-fat diet enhances ectopic fat deposition in pigs with intrauterine growth retardation.

    Science.gov (United States)

    Yan, Honglin; Zheng, Ping; Yu, Bing; Yu, Jie; Mao, Xiangbing; He, Jun; Huang, Zhiqing; Chen, Daiwen

    2017-03-01

    Intrauterine growth retardation (IUGR) and postnatal nutrition are risk factors for adult metabolic syndrome. However, the influences of long-term high-fat diet (HFD) intake on ectopic fat deposition in non-adipose tissues in IUGR pigs remain unclear. The present study was to determine whether HFD consumption would enhance ectopic fat deposition in IUGR pigs. At day 28, IUGR and control pigs were fed ad libitum to either a regular diet or a HFD. Lipid store, enzymatic activities and mRNA expression of lipid metabolism-related factors in liver and semitendinosus muscle (SM) were quantified at postnatal day 178. Feeding a HFD to IUGR pigs but not to control pigs significantly increased daily weight gain, carcass fat mass, plasma leptin level and lipid content and lipoprotein lipase (LPL) activity and mRNA abundances of LPL and peroxisome proliferator-activated receptor gamma (PPARγ) in liver and SM, but decreased daily feed intake and mRNA expression of hormone-sensitive lipase (LIPE) and carnitine palmitoyl transferase-1 (CPT-1) in liver and SM (P IUGR pigs had a lower body weight but higher plasma levels of total cholesterol (TC) and insulin (P IUGR increased the vulnerability of HFD-fed pigs to ectopic fat deposition via enhanced fatty acid flux toward ectopic sites and reduced lipolysis and fatty acid oxidation.

  12. Growth of cubic and hexagonal CdTe thin films by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Pandey, S.K. [Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi 110 054 (India)]. E-mail: 628@ssplnet.org; Tiwari, Umesh [Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi 110 054 (India); Raman, R. [Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi 110 054 (India); Prakash, Chandra [Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi 110 054 (India); Krishna, Vamsi [Centre for Energy Studies, Indian Institute of Technology, New Delhi 110 016 (India); Dutta, Viresh [Centre for Energy Studies, Indian Institute of Technology, New Delhi 110 016 (India); Zimik, K. [Laser Science and Technology Centre, Metcalfe House, Delhi 110 054 (India)

    2005-02-01

    The paper reports the growth of cadmium telluride (CdTe) thin films by pulsed laser deposition (PLD) using excimer laser (KrF, {lambda}=248 nm, 10 Hz) on corning 7059 glass and SnO{sub 2}-coated glass (SnO{sub 2}/glass) substrates at different substrate temperatures (T{sub s}) and at different laser energy pulses. Single crystal target CdTe was used for deposition of thin films. With 30 min deposition time, 1.8- to {approx}3-{mu}m-thick films were obtained up to 200 deg. C substrate temperature. However, the film re-evaporates from the substrate surface at temperatures >275 deg. C. Atomic force microscopy (AFM) shows an average grain size {approx}0.3 {mu}m. X-ray diffraction analysis confirms the formation of CdTe cubic phase at all pulse energies except at 200 mJ. At 200 mJ laser energy, the films show hexagonal phase. Optical properties of CdTe were also investigated and the band gap of CdTe films were found as 1.54 eV for hexagonal phase and {approx}1.6 eV for cubic phase.

  13. Dynamic growth and deposition of hygroscopic aerosols in the nasal airway of a 5-year-old child.

    Science.gov (United States)

    Kim, Jong Won; Xi, Jinxiang; Si, Xiuhua A

    2013-01-01

    Hygroscopic growth within the human respiratory tract can be significant, which may notably alter the behavior and fate of the inhaled aerosols. The objective of this study is to evaluate the hygroscopic effects upon the transport and deposition of nasally inhaled fine-regime aerosols in children. A physiologically realistic nasal-laryngeal airway model was developed based on magnetic resonance imaging of a 5-year-old boy. Temperature and relative humidity field were simulated using the low Reynolds number k - ε turbulence model and chemical specie transport model under a spectrum of four thermo-humidity conditions. Particle growth and transport were simulated using a well validated Lagrangian tracking model coupled with a user-defined hygroscopic growth module. The subsequent aerosol depositions for the four inhalation scenarios were evaluated on a multiscale basis such as total, subregional, and cellular-level depositions. Results of this study show that a supersaturated humid environment is possible in the nasal turbinate region and can lead to significant condensation growth (d / d(0)  > 10) of nasally inhaled aerosols. Depositions in the nasal airway can also be greatly enhanced by condensation growth with appropriate inhalation temperature and humidity. For subsaturated and mild inhalation conditions, the hygroscopic effects were found to be nonsignificant for total depositions, while exerting a large impact upon localized depositions. Copyright © 2012 John Wiley & Sons, Ltd.

  14. Targeting Aerosol Deposition to and Within the Lung Airways Using Excipient Enhanced Growth

    Science.gov (United States)

    Tian, Geng; Li, Xiang; Hindle, Michael

    2013-01-01

    Abstract Background Previous studies have characterized the size increase of combination submicrometer particles composed of a drug and hygroscopic excipient when exposed to typical airway thermodynamic conditions. The objective of this study was to determine the deposition and size increase characteristics of excipient enhanced growth (EEG) aerosols throughout the tracheobronchial (TB) airways and to evaluate the potential for targeted delivery. Methods Submicrometer particles composed of a poorly water-soluble drug (insulin) and hygroscopic excipient (sodium chloride) were considered at drug:excipient mass ratios of 50:50 and 25:75. A previously validated computational fluid dynamics model was used to predict aerosol size increase and deposition in characteristic geometries of the mouth–throat (MT), upper TB airways through the third bifurcation (B3), and remaining TB airways through B15. Additional validation experiments were also performed for albuterol sulfate:mannitol particles. Both growth of combination particles and deposition are reported throughout the conducting airways for characteristic slow and deep (SD) and quick and deep (QD) inhalations. Results For all EEG cases considered, MT deposition was less than 1% of the drug dose, which is at least one order of magnitude lower than with state-of-the-art and conventional inhalers. Final aerosol sizes exiting the TB region and entering the alveolar airways were all greater than 3 μm. For SD inhalation, deposition fractions of 20% were achieved in the lower TB region of B8–B15, which is a factor of 20–30×higher than conventional delivery devices. With QD inhalation, maximum alveolar delivery of 90% was observed. Conclusions Increasing the dose delivered to the lower TB region by a factor of 20–30×or achieving 90% delivery to the alveolar airways was considered effective aerosol targeting compared with conventional devices. The trend of higher flow rates resulting in better alveolar delivery of

  15. H2-dependent attachment kinetics and shape evolution in chemical vapor deposition graphene growth

    Science.gov (United States)

    Meca, Esteban; Shenoy, Vivek B.; Lowengrub, John

    2017-09-01

    Experiments on graphene growth through chemical vapor deposition (CVD) involving methane (CH4) and hydrogen (H2) gases reveal a complex shape evolution and a non-monotonic dependence on the partial pressure of H2 ({{p}{{\\text{H}2}}} ). To explain these intriguing observations, we develop a microkinetic model for the stepwise decomposition of CH4 into mobile radicals and consider two possible mechanisms of attachment to graphene crystals: CH radicals to hydrogen-decorated edges of the crystals and C radicals to bare crystal edges. We derive an effective mass flux and an effective kinetic coefficient, both of which depend on {{p}{{\\text{H}2}}} , and incorporate these into a phase field model. The model reproduces both the non-monotonic dependence on {{p}{{\\text{H}2}}} and the characteristic shapes of graphene crystals observed in experiments. At small {{p}{{\\text{H}2}}} , growth is limited by the kinetics of attachment while at large {{p}{{\\text{H}2}}} growth is limited because the effective mass flux is small. We also derive a simple analytical model that captures the non-monotone behavior, enables the two mechanisms of attachment to be distinguished and provides guidelines for CVD growth of defect-free 2D crystals.

  16. Growth study of indium-catalyzed silicon nanowires by plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zardo, I. [Technische Universitaet Muenchen, Walter Schottky Institut and Physik Department, Garching (Germany); Conesa-Boj, S.; Estrade, S.; Peiro, F. [Universitat de Barcelona, Departament d' Electronica, Barcelona, CAT (Spain); Yu, L.; Roca i Cabarrocas, P. [Ecole Polytechnique, CNRS, LPICM, Palaiseau (France); Morante, J.R. [Universitat de Barcelona, Departament d' Electronica, Barcelona, CAT (Spain); Catalonia Institute for Energy Research, Barcelona, CAT (Spain); Arbiol, J. [Universitat de Barcelona, Departament d' Electronica, Barcelona, CAT (Spain); Institucio Catalana de Recerca i Estudis Avancats (ICREA) and Institut de Ciencia de Materials de Barcelona, CSIC, Bellaterra, CAT (Spain); Fontcuberta i.Morral, A. [Technische Universitaet Muenchen, Walter Schottky Institut and Physik Department, Garching (Germany); Ecole Polytechnique Federale de Lausanne, Laboratoire des Materiaux Semiconducteurs, Institut des Materiaux, Lausanne (Switzerland)

    2010-07-15

    Indium was used as a catalyst for the synthesis of silicon nanowires in a plasma enhanced chemical vapor deposition reactor. In order to foster the catalytic activity of indium, the indium droplets had to be exposed to a hydrogen plasma prior to nanowire growth in a silane plasma. The structure of the nanowires was investigated as a function of the growth conditions by electron microscopy and Raman spectroscopy. The nanowires were found to crystallize along the <111>, <112> or <001> growth direction. When growing on the <112> and <111> directions, they revealed a similar crystal quality and the presence of a high density of twins along the {l_brace}111{r_brace} planes. The high density and periodicity of these twins lead to the formation of hexagonal domains inside the cubic structure. The corresponding Raman signature was found to be a peak at 495 cm{sup -1}, in agreement with previous studies. Finally, electron energy loss spectroscopy indicates an occasional migration of indium during growth. (orig.)

  17. Chemical vapor deposition growth of large grapheme single crystal from ethanol

    Science.gov (United States)

    Chen, Xiao; Zhao, Pei; Chiashi, Shohei; Maruyama, Shigeo

    2014-03-01

    Ethanol as a precursor has proven effective in the chemical vapor deposition (CVD) synthesis of graphene on both Ni foils and Cu capsule substrates. For applications of graphene in field effect transistors or as transparent conducting electrodes, larger singe-crystal graphene without any grain boundaries shows superior electrical performance and has attracted enormous interests. Here we report a protocol to synthesize large graphene single crystals (up to 600 μm) using ethanol as precursor on commercially-available polycrystalline Cu foils. We explored the mechanism by studying the influences of different growth parameters such as pressure, flow rate and temperature. Low partial pressure and low flow rate of ethanol is essential in achieving low nucleation density over the metal surface and therefore large graphene grains can be obtained. We found that growth temperature dramatically affects the crystallinity and the growth rate of graphene grains. Moreover, this CVD growth of large graphene single crystals involves no electro-polishing or annealing treatments to the metal surface, presenting a significant simplification to the current graphene synthesis process.

  18. Atomic Layer Deposition of Aluminum Sulfide: Growth Mechanism and Electrochemical Evaluation in Lithium-Ion Batteries

    Energy Technology Data Exchange (ETDEWEB)

    Meng, Xiangbo [Department; Cao, Yanqiang [Energy; Libera, Joseph A. [Energy; Elam, Jeffrey W. [Energy

    2017-10-17

    This study describes the synthesis of aluminum sulfide (AlSx) thin films by atomic layer deposition (ALD) using tris(dimethylamido)aluminum and hydrogen sulfide. We employed a suite of in situ measurement techniques to explore the ALD AlSx growth mechanism, including quartz crystal microbalance, quadrupole mass spectrometry, and Fourier transform infrared spectroscopy. A variety of ex situ characterization techniques were used to determine the growth characteristics, morphology, elemental composition, and crystallinity of the resultant AlSx films. This study revealed that the AlSx growth was self-limiting in the temperature range 100-250 degrees C, and the growth per cycle decreased linearly with increasing temperature from similar to 0.45 angstrom/cycle at 100 degrees C to similar to 0.1 angstrom/cycle at 250 degrees C. The AlSx films were amorphous in this temperature range. We conducted electrochemical testing to evaluate the ALD AlSx as a potential anode material for lithium-ion batteries (LIBs). The ALD AlSx exhibited reliable cyclability over 60 discharge-charge cycles with a sustainable discharge capacity of 640 mAh/g at a current density of 100 mA/g in the voltage window of 0.6-3.5

  19. Nets for social safety: an analysis of the growth and changing composition of social security programmes in the fisheries sector of Kerala State, India

    OpenAIRE

    Kurien, John; Paul, Antonyto

    2000-01-01

    Nets for Social Safety is a first –of –its-kind study, specially commissioned by the International Collective in Support of Fishworkers, to focus on the growth and changing composition of social security provisions in the fisheries sector of Kerala, a small coastal State in southwest India. John Kurien and Antonyto Paul, the authors of the study, enumerate the achievements and problems confronted by a developing maritime State in trying to ensure that a section of its population, which a...

  20. Electrical conductivity mechanisms in zinc oxide thin films deposited by pulsed laser deposition using different growth environments

    Energy Technology Data Exchange (ETDEWEB)

    Heluani, S.P. [Laboratorio de Fisica del Solido, Departamento de Fisica, Facultad de Ciencias Exactas y Tecnologia, Universidad Nacional de Tucuman (Argentina)]. E-mail: sperez@herrera.unt.edu.ar; Braunstein, G. [Department of Physics, University of Central Florida, Orlando, FL 32816 (United States); Villafuerte, M. [Laboratorio de Fisica del Solido, Departamento de Fisica, Facultad de Ciencias Exactas y Tecnologia, Universidad Nacional de Tucuman (Argentina); Simonelli, G. [Laboratorio de Fisica del Solido, Departamento de Fisica, Facultad de Ciencias Exactas y Tecnologia, Universidad Nacional de Tucuman (Argentina); Duhalde, S. [Laboratorio de Ablacion Laser, Facultad de Ingenieria, Universidad de Buenos Aires (Argentina)

    2006-12-05

    The mechanisms of electrical conduction in zinc oxide thin films, grown by pulsed laser deposition, have been investigated as a function of preparation conditions. The films were deposited on glass and silicon nitride coated silicon, using oxygen rich, oxygen deficient, or nitrogen atmospheres. The substrates were held at 473 K during deposition, and subsequently cooled down to room temperature in oxygen rich atmosphere of 4 Pa, or oxygen deficient atmosphere of 2 x 10{sup -3} Pa. Films deposited and cooled in an oxygen deficient atmosphere exhibited very high donor concentration, originated in intrinsic defects, and an impurity band related mechanism of conduction. Films deposited under relatively high oxygen pressure were highly resistive and showed, upon ultraviolet light irradiation, grain boundary controlled electrical transport. An enhancement of the conductivity was observed when using a nitrogen atmosphere during the deposition, and oxygen atmosphere during cooling. In this case, the dependence of the conductivity with temperature followed Motts' Law of variable range hopping, characteristic of a material with localized states randomly located in space. Since the density of hopping centers appears to be much larger than the density of nitrogen incorporated in this sample, it is suggested that the nitrogen induces defects in the zinc oxide lattice that behave as localized hopping centers, as well as carrier suppliers, giving rise to the observed conductivity.

  1. From atoms to layers: in situ gold cluster growth kinetics during sputter deposition

    Science.gov (United States)

    Schwartzkopf, Matthias; Buffet, Adeline; Körstgens, Volker; Metwalli, Ezzeldin; Schlage, Kai; Benecke, Gunthard; Perlich, Jan; Rawolle, Monika; Rothkirch, André; Heidmann, Berit; Herzog, Gerd; Müller-Buschbaum, Peter; Röhlsberger, Ralf; Gehrke, Rainer; Stribeck, Norbert; Roth, Stephan V.

    2013-05-01

    The adjustment of size-dependent catalytic, electrical and optical properties of gold cluster assemblies is a very significant issue in modern applied nanotechnology. We present a real-time investigation of the growth kinetics of gold nanostructures from small nuclei to a complete gold layer during magnetron sputter deposition with high time resolution by means of in situ microbeam grazing incidence small-angle X-ray scattering (μGISAXS). We specify the four-stage growth including their thresholds with sub-monolayer resolution and identify phase transitions monitored in Yoneda intensity as a material-specific characteristic. An innovative and flexible geometrical model enables the extraction of morphological real space parameters, such as cluster size and shape, correlation distance, layer porosity and surface coverage, directly from reciprocal space scattering data. This approach enables a large variety of future investigations of the influence of different process parameters on the thin metal film morphology. Furthermore, our study allows for deducing the wetting behavior of gold cluster films on solid substrates and provides a better understanding of the growth kinetics in general, which is essential for optimization of manufacturing parameters, saving energy and resources.The adjustment of size-dependent catalytic, electrical and optical properties of gold cluster assemblies is a very significant issue in modern applied nanotechnology. We present a real-time investigation of the growth kinetics of gold nanostructures from small nuclei to a complete gold layer during magnetron sputter deposition with high time resolution by means of in situ microbeam grazing incidence small-angle X-ray scattering (μGISAXS). We specify the four-stage growth including their thresholds with sub-monolayer resolution and identify phase transitions monitored in Yoneda intensity as a material-specific characteristic. An innovative and flexible geometrical model enables the extraction

  2. Fundamental studies of the mechanisms of slag deposit formation: Studies on initiation, growth and sintering in the formation of utility boiler deposits: Topical technical report

    Energy Technology Data Exchange (ETDEWEB)

    Tangsathitkulchai, M.; Austin, L.G.

    1986-03-01

    Three laboratory-scale devices were utilized to investigate the mechanisms of the initiation, growth and sintering process involved in the formation of boiler deposits. Sticking apparatus investigations were conducted to study deposit initiation by comparing the adhesion behavior of the ash drops on four types of steel-based heat exchanger materials under the conditions found in a utility boiler and an entrained slagging gasifier. In addition, the adhesion behavior of the ash drops on a reduced steel surface were investigated. All the ash drops studied in this investigation were produced from bituminous coals.

  3. Microstructural study of CMR films as a function of growth temperature as-deposited and annealed

    Energy Technology Data Exchange (ETDEWEB)

    Hawley, M.E.; Wu, X.D.; Arendt, C.D.; Adams, M.F.; Hundley; Hefner, R.H.

    1995-12-31

    The properties encompassed by the family of complex metal oxides span the spectrum from superconductors to insulating ferroelectrics. Included in this family are the new colossal magneto-resistive perovskites with potential applications in advanced high density magnetic data storage devices based on single or multilayer thin films units of these materials fabricated by vapor phase deposition (PVD) methods. The realization of this potential requires solving basic thin film materials problems requiring understanding and controlling the growth of these materials. Toward this end, we have grown La{sub 0.7}Ca{sub 0.3}MnO{sub 3} and La{sub 0.7}Sr{sub 0. 3}MnO{sub 3} on LaAIO{sub 3} single crystal substrates by pulsed laser and RF sputter deposition at 500 to 900 C and annealed at over 900 C for about 10 hours. The evolution of the microstructure of these films was studied by scanning probe microscopies and transmission electron microscopy (TEM). Results of SPM characterization showed that at the lower end of the growth temperature range, the as-grown films were polygranular with grain size increasing with temperature. The 500 C as-grown films appeared to be amorphous while the 750 C film grains were layered with terrace steps often one unit cell high. In contrast, films grown at 900 C consisted of coalesced islands with some 3-D surface crystals. After annealing, all films had coalesced into very large extended layered islands. The change in microstructure was reflected in a decreased resistivity of coalesced films over their unannealed granular precursors. Previous reported work on the growth of La{sub 0. 84}Sr{sub 0.16}MnO{sub 3} and La{sub 0.8}Sr{sub 0.2}CoO{sub 3} grown demonstrated the sensitivity of the microstructure to substrate and deposition conditions. Films grown on an ``accidental`` vicinal surface grew by a step flow mechanism.

  4. High Yield Chemical Vapor Deposition Growth of High Quality Large-Area AB Stacked Bilayer Graphene

    Science.gov (United States)

    Liu, Lixin; Zhou, Hailong; Cheng, Rui; Yu, Woo Jong; Liu, Yuan; Chen, Yu; Shaw, Jonathan; Zhong, Xing; Huang, Yu; Duan, Xiangfeng

    2012-01-01

    Bernal stacked (AB stacked) bilayer graphene is of significant interest for functional electronic and photonic devices due to the feasibility to continuously tune its band gap with a vertical electrical field. Mechanical exfoliation can be used to produce AB stacked bilayer graphene flakes but typically with the sizes limited to a few micrometers. Chemical vapor deposition (CVD) has been recently explored for the synthesis of bilayer graphene but usually with limited coverage and a mixture of AB and randomly stacked structures. Herein we report a rational approach to produce large-area high quality AB stacked bilayer graphene. We show that the self-limiting effect of graphene growth on Cu foil can be broken by using a high H2/CH4 ratio in a low pressure CVD process to enable the continued growth of bilayer graphene. A high temperature and low pressure nucleation step is found to be critical for the formation of bilayer graphene nuclei with high AB stacking ratio. A rational design of a two-step CVD process is developed for the growth of bilayer graphene with high AB stacking ratio (up to 90 %) and high coverage (up to 99 %). The electrical transport studies demonstrated that devices made of the as-grown bilayer graphene exhibit typical characteristics of AB stacked bilayer graphene with the highest carrier mobility exceeding 4,000 cm2/V·s at room temperature, comparable to that of the exfoliated bilayer graphene. PMID:22906199

  5. Pulsed Laser Deposition Growth of Delafossite (CuFeO2) thin films and multilayers

    Science.gov (United States)

    Joshi, Toyanath; Ferrari, Piero; Borisov, Pavel; Cabrera, Alejandro; Lederman, David

    2014-03-01

    Owing to its narrow band gap (delafossite CuFeO2 is attractive for applications in the field of solar energy conversion. Obtaining pure phase CuFeO2 thin films, however, is relatively difficult. It is necessary to maintain the lowest possible Cu valency (+1) in order to avoid forming the comparably stable spinel compound CuFe2O4. We present a systematic study of the pulsed laser deposition (PLD) growth conditions for epitaxial (00.1) oriented CuFeO2 thin films on Al2O3 (00.1) substrates. The secondary impurity phase, CuFe2O4, was removed completely by optimizing the growth conditions. RHEED, XRD and TEM showed that the pure phase delafossite films are highly epitaxial to the substrate. The chemical purity was verified by Raman and XPS. The indirect bandgap of 1.15 eV was measured using infrared reflectivity, and is in agreement with the CuFeO2 bulk value. Finally, we discuss the growth and structural characterization of delafossite multilayers, CuFeO2/CuGaO2. This work was supported by a Research Challenge Grant from the West Virginia Higher Education Policy Commission (HEPC.dsr.12.29) and the Microelectronics Advanced Research Corporation (Contract # 2013-MA-2382) at WVU.

  6. Growth process optimization of ZnO thin film using atomic layer deposition

    Science.gov (United States)

    Weng, Binbin; Wang, Jingyu; Larson, Preston; Liu, Yingtao

    2016-12-01

    The work reports experimental studies of ZnO thin films grown on Si(100) wafers using a customized thermal atomic layer deposition. The impact of growth parameters including H2O/DiethylZinc (DEZn) dose ratio, background pressure, and temperature are investigated. The imaging results of scanning electron microscopy and atomic force microscopy reveal that the dose ratio is critical to the surface morphology. To achieve high uniformity, the H2O dose amount needs to be at least twice that of DEZn per each cycle. If the background pressure drops below 400 mTorr, a large amount of nanoflower-like ZnO grains would emerge and increase surface roughness significantly. In addition, the growth temperature range between 200 °C and 250 °C is found to be the optimal growth window. And the crystal structures and orientations are also strongly correlated to the temperature as proved by electron back-scattering diffraction and x-ray diffraction results.

  7. Laterally Stitched Heterostructures of Transition Metal Dichalcogenide: Chemical Vapor Deposition Growth on Lithographically Patterned Area

    KAUST Repository

    Li, Henan

    2016-10-31

    Two-dimensional transition metal dichalcogenides (TMDCs) have shown great promise in electronics and optoelectronics due to their unique electrical and optical properties. Heterostructured TMDC layers such as the laterally stitched TMDCs offer the advantages of better electronic contact and easier band offset tuning. Here, we demonstrate a photoresist-free focused ion beam (FIB) method to pattern as-grown TMDC monolayers by chemical vapor deposition, where the exposed edges from FIB etching serve as the seeds for growing a second TMDC material to form desired lateral heterostructures with arbitrary layouts. The proposed lithographic and growth processes offer better controllability for fabrication of the TMDC heterostrucuture, which enables the construction of devices based on heterostructural monolayers. © 2016 American Chemical Society.

  8. Silica Nanowire Growth on Photonic Crystal Fiber by Pulsed Femtosecond Laser Deposition

    Science.gov (United States)

    Langellier, Nicholas; Li, Chih-Hao; Furesz, Gabor; Glenday, Alex; Phillips, David; Zhang, Huiliang; Noah Chang, Guoqing; Kaertner, Franz; Szentgyorgyi, Andrew; Walsworth, Ronald

    2012-06-01

    We present a new method of nanowire fabrication using pulsed laser deposition. An 800 mW 1 GHz femtosecond Ti:Sapphire laser is guided into a polarization-maintaining photonic crystal fiber (PCF). The PCF, with a core tapered to 1.7 micron diameter, converts femtosecond laser pulses centered at 800 nm into green light with a spectrum down to 500 nm. The PCF is enclosed in a cylindrical tube with glass windows, sealed in a class 100 clean room with silicone-based RTV adhesive. The high power of each laser pulse in a silica-rich environment leads to growth of a silica nanowire at the output end of the PCF. SEM analysis shows that the nanowire is 720 nm in diameter and grows at a rate of about 0.6 um/s. Details of nanowire performance along with potential applications will be presented.

  9. Growth of calcium phosphate thin films by in situ assisted ultraviolet pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Nelea, V.; Craciun, V.; Iliescu, M.; Mihailescu, I.N.; Pelletier, H.; Mille, P.; Werckmann, J

    2003-03-15

    Calcium phosphate (CaP) thin films including hydroxyapatite were intensively studied in order to optimize the technology of the bone prostheses manufacturing. A drawback in the CaP films processing is the poor mechanical characteristics, especially hardness, tensile strength and adherence to the metallic substrate. We report a new method for the growth of high quality CaP films with substantial improvement of the mechanical properties: pulsed laser deposition (PLD) assisted by in situ ultraviolet (UV) radiation emitted by a low pressure Hg lamp. The depositions were made on Si and Ti-5Al-2.5Fe alloys in very low ambient oxygen at pressures of 10{sup -2} to 10{sup -1} Pa with the substrates maintained at 500-600 deg. C temperature. The films were analyzed by electron microscopy, white light confocal microscopy (WLCM), grazing incidence X-ray diffraction and Berkovich nanoindentation. The films were crystalline and exhibited remarkable mechanical characteristics with values of hardness and Young modulus of 6-8 and 150-170 GPa, respectively, which are uncommonly high for the CaP ceramics. The UV lamp radiation enhanced the gas reactivity and atoms mobility during processing, while the tensile strength between the film's grains and the bonding strength at the CaP film-substrate interface were increased.

  10. Chemical Vapor Deposition Growth. Final Report, December 29, 1975 -- August 31, 1977

    Energy Technology Data Exchange (ETDEWEB)

    Ruth, R. P.; Manasevit, H. M.; Campbell, A. G.; Johnson, R. E.; Kenty, J. L.; Moudy, L. A.; Shaw, G. L.; Simpson, W. I.; Yang, J. J.

    1978-10-01

    The objective of this study was to investigate and develop chemical vapor deposition (CVD) techniques for the growth of large areas of Si sheet on inexpensive substrate materials, with resulting sheet properties suitable for fabricating solar cells that would meet the technical goals of the Low Cost Silicon Solar Array (LSSA) Project. The results of 20 months of experimental work are summarized. The program involved six main technical tasks: (1) modification and test of an existing vertical-chamber CVD reactor system; (2) identification and/or development of suitable inexpensive substrate materials; (3) experimental investigation of CVD process parameters using various candidate substrate materials; (4) preparation of Si sheet samples for various special studies, including solar cell fabrication; (5) evaluation of the properties of the Si sheet material produced by the CVD process; and (6) fabrication and evaluation of experimental solar cell structures by OCLI, using impurity diffusion and other standard and near-standard processing techniques, supplemented late in the program by the in situ CVD growth of n exp + /p/p exp + sheet structures subsquently processed into experimental cells. The principal CVD process used was silane (SiH sub 4 ) pyrolysis, although a few experiments were done with the dichlorosilane (SiH sub 2 Cl sub 2 ) process for Si deposition. The evaluation of various possiblesubstrate materials, the CVD parameter investigations, and the experimental solar cell fabrication and characterization are described in considerable detail. Specific conclusions of the work are discussed, and recommendations for continued investigations in certain areas are given.

  11. Influence of the growth parameters on TiO2 thin films deposited using the MOCVD method

    Directory of Open Access Journals (Sweden)

    Bernardi M. I. B.

    2002-01-01

    Full Text Available In this work we report the synthesis of TiO2 thin films by the Organometallic Chemical Vapor Deposition (MOCVD method. The influence of deposition parameters used during the growth in the obtained structural characteristics was studied. Different temperatures of the organometallic bath, deposition time, temperature and type of the substrate were combined. Using Scanning Electron Microscopy associated to Electron Dispersive X-Ray Spectroscopy, Atomic Force Microscopy and X-ray Diffraction, the strong influence of these parameters in the thin films final microstructure was verified.

  12. Monitoring of trace metals, biochemical composition and growth of Axillary seabream (Pagellus acarne Risso, 1827 in offshore Copper alloy net cage

    Directory of Open Access Journals (Sweden)

    M. YIGIT

    2016-02-01

    Full Text Available The study was conducted to assess trace metal contents, biochemical composition and growth performance of axillary seabream (Pagellus acarne Risso, 1827 cultured in a copper alloy mesh cage. A total of 400 axillary seabream (initial mean weight: 176.0±14.0 g, a new candidate species for the Mediterranean aquaculture, were stocked into a high-density polyethylene frame gravity cage and fed a commercial seabream diet for a period of 6 months. At the end of the feeding trial, fish reached a final weight of 264.8±16.8 g with a weight increase of 88.8 g and a feed conversion rate of 2.51. Overall, relative growth rate, specific growth rate and feed conversion ratio were satisfactory and comparable to the pelagic fishes such as gilthead seabream or European seabass, which are presently the main fish species for the Mediterranean aquaculture industry. Trace elements in fish grown in copper alloy net cages over a 6-month period showed satisfactory results, as the metal concentrations in fish tissues such as liver, skin, muscle and gills were below the reported upper limits for human consumption, indicating that copper alloy net is an acceptable and safe material for finfish cage aquaculture. Furthermore, from the growth performance data obtained in the present study, it can be concluded that axillary seabream showed potential for cage farming, and thus is a promising new candidate for the Mediterranean aquaculture industry.

  13. Silicon nitride at high growth rate using hot wire chemical vapor deposition

    NARCIS (Netherlands)

    Verlaan, V.

    2008-01-01

    Amorphous silicon nitride (SiNx) is a widely studied alloy with many commercial applications. This thesis describes the application of SiNx deposited at high deposition rate using hot wire chemical vapor deposition (HWCVD) for solar cells and thin film transistors (TFTs). The deposition process of

  14. N sources affect growth, nutrient content, and net photosynthesis in maté (Ilex paraguariensis St. Hil.

    Directory of Open Access Journals (Sweden)

    Sérgio Gaiad

    2006-09-01

    Full Text Available The influence of different N sources on the growth of maté (Ilex paragurariensis St.Hil. seedlings grown in greenhouse was studied. All seedlings received a base fertilization of 10 mg N.kg-1 soil as NH4NO3, 60 mg P2O5.and 40 mg K2O.kg-1 soil as KH2PO4 15 days before treatments application. Treatments were as follow: Control, with no extra N added; Urea = 100 mg N.kg-1 soil as Urea; NO3- = 100 mg N.kg-1 soil as Ca(NO32; and NH4+ = 100 mg N.kg-1 soil as (NH42SO4. It was concluded that: 1 increasing N content in leaves alone was not able to promote gain in biomass production of maté seedlings; 2 seedlings receiving N-NH4 showed a higher accumulation of P and Mg on shoot biomass; and 3 an increase in leaf area, leaf number and net photosynthesis observed at the N-NH4 treatment was coincident with an increasing absorption of P and Mg.A influência de diferentes fontes de N sobre o crescimento de mudas de erva-mate (Ilex paraguariensis St.Hil. foi estudada, em casa de vegetação. Todas as mudas receberam uma fertilização base de 10 mg N.kg-1 de solo na forma de NH4NO3, 60 mg P2O5.kg-1 e 40 mg K2O.kg-1 de solo na forma de KH2PO4 quinze dias antes da aplicação dos tratamentos. Os tratamentos foram os seguintes: Controle, sem adição extra de N; Uréia = 100 mg N.kg-1 de solo como Uréia; NO3- = 100 mg N.kg-1 de solo como Ca(NO32; e NH4+ = 100 mg N.kg-1 de solo como (NH42SO4. Concluiu-se que: 1 o aumento do conteúdo de N nas folhas, por si, não é capaz de promover ganhos na produção de biomassa em mudas de erva-mate; 2 mudas que receberam N-NH4 apresentaram maior acumulo de P e Mg na biomassa aérea; e 3 o aumento na absorção de P e Mg coincidiu com um aumento na área foliar, no número de folhas e na fotossíntese liquida na fonte N-NH4.

  15. A stochastic model of solid state thin film deposition: Application to chalcopyrite growth

    Directory of Open Access Journals (Sweden)

    Robert J. Lovelett

    2016-04-01

    Full Text Available Developing high fidelity quantitative models of solid state reaction systems can be challenging, especially in deposition systems where, in addition to the multiple competing processes occurring simultaneously, the solid interacts with its atmosphere. In this work, we develop a model for the growth of a thin solid film where species from the atmosphere adsorb, diffuse, and react with the film. The model is mesoscale and describes an entire film with thickness on the order of microns. Because it is stochastic, the model allows us to examine inhomogeneities and agglomerations that would be impossible to characterize with deterministic methods. We demonstrate the modeling approach with the example of chalcopyrite Cu(InGa(SeS2 thin film growth via precursor reaction, which is a common industrial method for fabricating thin film photovoltaic modules. The model is used to understand how and why through-film variation in the composition of Cu(InGa(SeS2 thin films arises and persists. We believe that the model will be valuable as an effective quantitative description of many other materials systems used in semiconductors, energy storage, and other fast-growing industries.

  16. Optimized growth conditions of epitaxial SnSe films grown by pulsed laser deposition

    Science.gov (United States)

    Hara, Takamitsu; Fujishiro, Hiroyuki; Naito, Tomoyuki; Ito, Akihiko; Goto, Takashi

    2017-12-01

    We have grown epitaxial tin monoselenide (SnSe) films on MgO or SrTiO3 (STO) substrates by pulsed laser deposition (PLD) at T s = 473 or 573 K, and investigated the optimized growth condition in terms of crystal orientation, crystallinity, and electrical resistivity. For the PLD procedure, a SnSe x (x = 1.0–1.6) target containing excess Se was used to compensate for the vaporization of Se. The crystal orientation and crystallinity of the SnSe films changed depending on the growth conditions, and the magnitude of the electrical resistivity ρ of the films was closely related to the crystalline nature. The SnSe film grown on the MgO substrate at T s = 573 K using the target with x = 1.4 was the most highly a-axis-oriented and highly crystalized among all of the films investigated in this study. However, the ρ of the film in the bc-plane was about one order of magnitude larger than those of the reported single crystal and the a-axis-oriented crystalline sample fabricated by spark plasma sintering. This larger ρ was suggested to result from the lattice mismatch and/or a small amount of nonstoichiometry in the film.

  17. Chemical vapor deposition growth of boron–carbon–nitrogen layers from methylamine borane thermolysis products

    Science.gov (United States)

    Leardini, Fabrice; Flores, Eduardo; Galvis E, Andrés R.; Ferrer, Isabel J.; Ramón Ares, José; Sánchez, Carlos; Molina, Pablo; van der Meulen, Herko P.; Gómez Navarro, Cristina; López Polin, Guillermo; Urbanos, Fernando J.; Granados, Daniel; García-García, F. Javier; Demirci, Umit B.; Yot, Pascal G.; Mastrangelo, Filippo; Grazia Betti, Maria; Mariani, Carlo

    2018-01-01

    This work investigates the growth of B–C–N layers by chemical vapor deposition using methylamine borane (MeAB) as the single-source precursor. MeAB has been synthesized and characterized, paying particular attention to the analysis of its thermolysis products, which are the gaseous precursors for B–C–N growth. Samples have been grown on Cu foils and transferred onto different substrates for their morphological, structural, chemical, electronic and optical characterizations. The results of these characterizations indicate a segregation of h-BN and graphene-like (Gr) domains. However, there is an important presence of B and N interactions with C at the Gr borders, and of C interacting at the h-BN-edges, respectively, in the obtained nano-layers. In particular, there is a significant presence of C–N bonds, at Gr/h-BN borders and in the form of N doping of Gr domains. The overall B:C:N contents in the layers is close to 1:3:1.5. A careful analysis of the optical bandgap determination of the obtained B–C–N layers is presented, discussed and compared with previous seminal works with samples of similar composition.

  18. Low-temperature growth of ZnO nanorods by chemical bath deposition.

    Science.gov (United States)

    Yi, Sung-Hak; Choi, Seung-Kyu; Jang, Jae-Min; Kim, Jung-A; Jung, Woo-Gwang

    2007-09-15

    Aligned ZnO nanorod arrays were synthesized using a chemical bath deposition method at normal atmospheric pressure without any metal catalyst. A simple two-step process was developed for growing ZnO nanorods on a PET substrate at 90-95 degrees C. The ZnO seed precursor was prepared by a sol-gel reaction. ZnO nanorod arrays were fabricated on ZnO-seed-coated substrate. The ZnO seeds were indispensable for the aligned growth of ZnO nanorods. The ZnO nanorods had a length of 400-500 nm and a diameter of 25-50 nm. HR-TEM and XRD analysis confirmed that the ZnO nanorod is a single crystal with a wurtzite structure and its growth direction is [0001] (the c-axis). Photoluminescence measurements of ZnO nanorods revealed an intense ultraviolet peak at 378.3 nm (3.27 eV) at room temperature.

  19. Ge deposition on Si(1 0 0) in the conditions close to dynamic equilibrium between islands growth and their decay

    Energy Technology Data Exchange (ETDEWEB)

    Shklyaev, A.A., E-mail: shklyaev@isp.nsc.ru [A.V. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Novosibirsk 630090 (Russian Federation); Budazhapova, A.E. [Novosibirsk State Technical University, Novosibirsk 630055 (Russian Federation)

    2016-01-01

    Graphical abstract: - Highlights: • Solid source MBE is used for island growth by Ge deposition on Si(1 0 0) at 700–900 °C. • Islands acquire a monomodal size distribution at temperatures above 800 °C. • Islands form ordered arrays during Ge deposition at 900 °C. • Conditions close to dynamic equilibrium are realized for growth and decay of islands at 900 °C. • Shape of ordered islands is cone with shallow sidewalls. - Abstract: The formation of islands arrays during Ge deposition on Si(1 0 0) at high temperatures is studied using scanning tunneling and electron microscopies. It is found that the island size and shape distributions, which are known to be bimodal at growth temperatures below 700 °C, become monomodal at temperatures above 800 °C. The obtained data suggest that the processes such as island nucleation and Ostwald ripening become less significant in the surface morphology formation, giving the advantage to selective attachment of deposited Ge atoms to island sidewalls and spatially inhomogeneous Si-Ge intermixing, as the temperature increases. At 900 °C, the islands exhibit a tendency to form laterally ordered arrays when the growth conditions approach the dynamic equilibrium between the growth of islands and their decay by means of Si-Ge intermixing. The islands ordering is accompanied by their shape transformation into the cone with shallow sidewalls inclined from (1 0 0) by angles of around 10°.

  20. Rapid growth of zinc oxide nanobars in presence of electric field by physical vapor deposition

    Science.gov (United States)

    Jouya, Mehraban; Taromian, Fahime; Siami, Simin

    2018-01-01

    In this contribution, electric field has some effects to increase growth for specific time duration on zinc oxide (ZnO) nanobars. First, the zinc (Zn) thin film has been prepared by 235,000 V/m electric field assisted physical vapor deposition (PVD) at vacuum of 1.33 × 10-5 mbar. Second, strong electric field of 134,000 V/m has been used in ambient for growing ZnO nanobars in term of the time include 2.5 and 10 h. The performances of the ZnO nanostructure in absence and presence of electric field have been determined by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The results of XRD analysis showed that ZnO has a hexagonal bars structure and a strongly preferred (101) orientation which is strongest than without applying electric field. SEM analysis revealed that physical vapored ZnO thin film in presence of electric field are densely packed with uniform morphological, thinner and denser in distribution. Electric field effect for ZnO growth in 2.5 h is better than it in the 2.5 h without electric field but by passing the time the media influence has good power almost as same as electric field. Through this electric field in PVD, the compact and uniform Zn film has been achieved which is less diameter than ordinary PVD method. Finally, we carry out a series of experiments to grow different-orientation ZnO nanobars with less than 100 nm in diameter, which are the time saving process in base of PVD ever reported. Therefore, the significant conclusion in usage electric field is reducing time of growth.

  1. Effects of nitrogen on the growth and optical properties of ZnO thin films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Cui, J B; Thomas, M A; Soo, Y C; Kandel, H; Chen, T P [Department of Physics and Astronomy, University of Arkansas at Little Rock, Little Rock, AR 72204 (United States)

    2009-08-07

    ZnO thin films were grown using pulsed laser deposition by ablating a Zn target in various mixtures of O{sub 2} and N{sub 2}. The presence of N{sub 2} during deposition was found to affect the growth of the ZnO thin films and their optical properties. Small N{sub 2} concentrations during growth led to strong acceptor-related photoluminescence (PL), while larger concentrations affected both the intensity and temperature dependence of the emission peaks. In addition, the PL properties of the annealed ZnO thin films are associated with the N{sub 2} concentration during their growth. The possible role of nitrogen in ZnO growth and annealing is discussed.

  2. Influence Analysis of Return on Assets (ROA), Return on Equity (ROE), Net Profit Margin (NPM), Debt To Equity Ratio (DER), and current ratio (CR), Against Corporate Profit Growth In Automotive In Indonesia Stock Exchange

    OpenAIRE

    Mohd. Heikal; Muammar Khaddafi; Ainatul Ummah

    2014-01-01

    The purpose of this research to analyze the effect of Return On Asset, Return On Equity, Net Profit Margin, Debt To Equity Ratio and Current Ratio toward growth income either simultaneously or partially on automotive companies that were listed in Indonesia stock exchange. Independent variables used in this research were Return On Asset, Return On Equity, Net Profit Margin, Debt To Equity Ratio and Current Ratio and dependent variable in this research was growth incom. The data used in this re...

  3. Net photosynthesis, dark respiration, specific leaf weight, and growth of young apple trees as influenced by light regime

    Energy Technology Data Exchange (ETDEWEB)

    Barden, J.A.

    1974-11-01

    Eight different light treatments did not affect shoot length, leaf number, or total leaf area of young Red Yorking apple (Malus pumila Mill.) trees grown in a greenhouse. Dry weights of leaves and stems were suppressed by 80% shade. Net photosynthesis Pn, dark respiration (Rd), and specific leaf weight (SLW) were higher in sun than in shade leaves and adaptations in all 3 parameters occurred as a result of changing light conditions, even after leaf expansion had ceased. 5 figures, 1 table.

  4. Synthesis, Characterization and Growth Mechanism of ZnO Nano-flower by Thermal Chemical Vapor Deposition Method at Low Deposition Temperature

    Science.gov (United States)

    Hartini, A. R.; Amizam, S.; Mamat, M. H.; Abdullah, S.; Rusop, M.

    2008-05-01

    Photoluminescence and morphology studies of Zinc Oxide (ZnO) thin films prepared by using Thermal Chemical Vapor Deposition (Thermal-CVD) were investigated. The ZnO compound was synthesized from zinc acetate dehydrate which act as a starting material to form the ZnO thin films. It was deposited on silicon with low deposition temperature ranging from 400-600 °C with Au as a catalyst assisted. Surface morphology of the samples was examined by Scanning Electron Microscope and photoluminescence properties were studied using Photoluminescence Spectrometer. The surface morphologies of the ZnO nano-flower structure was obviously obtained at deposition temperature of 400 °C. The individual nano-rods diameter of nano-flower is about 100-350 nm, but the end of nano-rods are very sharp which is the size is less than 50 nm. Possible growth mechanism of ZnO nano-flower also discussed. Room temperature PL spectra from the ZnO nano-flower revealed a strong UV emission and broad green emission. This result is very useful for sensor, probe tip and light emitter applications.

  5. Fate of HTO following its acute soil deposition at different growth stages of Chinese cabbage

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Yong-Ho [Nuclear Environment Research Division, Korea Atomic Energy Research Institute, P.O. Box 105, Yuseong, Daejeon 305-600 (Korea, Republic of)], E-mail: yhchoi1@kaeri.re.kr; Kang, Hee-Seok; Jun, In; Keum, Dong-Kwon; Lee, Hansoo [Nuclear Environment Research Division, Korea Atomic Energy Research Institute, P.O. Box 105, Yuseong, Daejeon 305-600 (Korea, Republic of); Kim, Sang-Bog [Environmental Research Branch, Chalk River Laboratories, Atomic Energy Canada Limited, Chalk River, Ontario K0J 1J0 (Canada); Lee, Chang-Woo [Nuclear Environment Research Division, Korea Atomic Energy Research Institute, P.O. Box 105, Yuseong, Daejeon 305-600 (Korea, Republic of)

    2007-09-15

    Lysimeter experiments were carried out in a greenhouse to study the fate of HTO following its soil deposition at different growth stages of Chinese cabbage. An HTO solution was applied to the surface of an acidic sandy soil at a time before, and four different times after, sowing. The transfer of HTO to the plants was quantified with the areal transfer factor (TF{sub a}, m{sup 2} kg{sup -1}-fresh) defined as the ratio of the plant concentration at harvest to the areal activity deposition. In the four post-sowing applications, the TF{sub a} values were in the ranges of 1.6 x 10{sup -5}-4.9 x 10{sup -3} for TFWT and 4.5 x 10{sup -6}-4.3 x 10{sup -5} for OBT, increasing with a decrease in the time interval between application and harvest. In the pre-sowing application, which was followed by a soil mixing, the TF{sub a} values for TFWT and OBT were 1.3 x 10{sup -4} and 8.6 x 10{sup -6}, respectively. One week after harvest, soil samplings were made for the applications at 26 (A(26)) and 63 d (A(63)) after sowing. Peaks of the depth profiles of the soil HTO appeared in the 10-15 cm layer for A(26) and the 5-10 cm layer for A(63). The top 30 cm of soil contained 0.5% and 20% of the applied activity for A(26) and A(63), respectively. Negligible fractions seemed to be in the deeper zone. It was estimated that almost all or most of the applied HTO had escaped to the air before plants' harvest.

  6. Van der Waals epitaxial growth of MoS2 on SiO2/Si by chemical vapor deposition

    KAUST Repository

    Cheng, Yingchun

    2013-01-01

    Recently, single layer MoS2 with a direct band gap of 1.9 eV has been proposed as a candidate for two dimensional nanoelectronic devices. However, the synthetic approach to obtain high-quality MoS2 atomic thin layers is still problematic. Spectroscopic and microscopic results reveal that both single layers and tetrahedral clusters of MoS2 are deposited directly on the SiO2/Si substrate by chemical vapor deposition. The tetrahedral clusters are mixtures of 2H- and 3R-MoS2. By ex situ optical analysis, both the single layers and tetrahedral clusters can be attributed to van der Waals epitaxial growth. Due to the similar layered structures we expect the same growth mechanism for other transition-metal disulfides by chemical vapor deposition. © 2013 The Royal Society of Chemistry.

  7. Net Locality

    DEFF Research Database (Denmark)

    de Souza e Silva, Adriana Araujo; Gordon, Eric

    Provides an introduction to the new theory of Net Locality and the profound effect on individuals and societies when everything is located or locatable. Describes net locality as an emerging form of location awareness central to all aspects of digital media, from mobile phones, to Google Maps...... of emerging technologies, from GeoCities to GPS, Wi-Fi, Wiki Me, and Google Android....

  8. Net Neutrality

    DEFF Research Database (Denmark)

    Savin, Andrej

    2017-01-01

    Repealing “net neutrality” in the US will have no bearing on Internet freedom or security there or anywhere else.......Repealing “net neutrality” in the US will have no bearing on Internet freedom or security there or anywhere else....

  9. Structure and Growth of Vapor-Deposited n-Dotriacontane Films Studied by X-ray Reflectivity

    DEFF Research Database (Denmark)

    del Campo, V.; Cisternas, E.; Taub, H.

    2009-01-01

    We have used synchrotron X-ray reflectivity measurements to investigate the structure of n-dotriacontane (n-C32H66 or C32) films deposited from the vapor phase onto a SiO2-coated Si(100) surface. Our primary motivation was to determine whether the structure and growth mode of these films differ...

  10. The reverse cholesterol transport pathway improves understanding of genetic networks for fat deposition and muscle growth in beef cattle

    Science.gov (United States)

    In the present study, thirteen genes involved in the reverse cholesterol transport (RCT) pathway were investigated for their associations with three fat depositions, eight fatty acid compositions and two growth-related phenotypes in a Wagyu x Limousin reference population, including 6 F1 bulls, 113 ...

  11. Effect of growth time on Ti-doped ZnO nanorods prepared by low-temperature chemical bath deposition

    Science.gov (United States)

    Bidier, Shaker A.; Hashim, M. R.; Al-Diabat, Ahmad M.; Bououdina, M.

    2017-04-01

    Ti-doped ZnO nanorod arrays were grown onto Si substrate using chemical bath deposition (CBD) method at 93 °C. To investigate the effect of time deposition on the morphological, and structural properties, four Ti-doped ZnO samples were prepared at various deposition periods of time (2, 3.5, 5, and 6.5 h). FESEM images displayed high-quality and uniform nanorods with a mean length strongly dependent upon deposition time; i.e. it increases for prolonged growth time. Additionally, EFTEM images reveal a strong erosion on the lateral side for the sample prepared for 6.5 h as compared to 5 h. This might be attributed to the dissolution reaction of ZnO with for prolonged growth time. XRD analysis confirms the formation of a hexagonal wurtzite-type structure for all samples with a preferred growth orientation along the c-axis direction. The (100) peak intensity was enhanced and then quenched, which might be the result of an erosion on the lateral side of nanorods as seen in EFTEM. This study confirms the important role of growth time on the morphological features of Ti-doped ZnO nanorods prepared using CBD.

  12. Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillars.

    Science.gov (United States)

    Skibitzki, Oliver; Capellini, Giovanni; Yamamoto, Yuji; Zaumseil, Peter; Schubert, Markus Andreas; Schroeder, Thomas; Ballabio, Andrea; Bergamaschini, Roberto; Salvalaglio, Marco; Miglio, Leo; Montalenti, Francesco

    2016-10-05

    In this work, we demonstrate the growth of Ge crystals and suspended continuous layers on Si(001) substrates deeply patterned in high aspect-ratio pillars. The material deposition was carried out in a commercial reduced-pressure chemical vapor deposition reactor, thus extending the "vertical-heteroepitaxy" technique developed by using the peculiar low-energy plasma-enhanced chemical vapor deposition reactor, to widely available epitaxial tools. The growth process was thoroughly analyzed, from the formation of small initial seeds to the final coalescence into a continuous suspended layer, by means of scanning and transmission electron microscopy, X-ray diffraction, and μ-Raman spectroscopy. The preoxidation of the Si pillar sidewalls and the addition of hydrochloric gas in the reactants proved to be key to achieve highly selective Ge growth on the pillars top only, which, in turn, is needed to promote the formation of a continuous Ge layer. Thanks to continuum growth models, we were able to single out the different roles played by thermodynamics and kinetics in the deposition dynamics. We believe that our findings will open the way to the low-cost realization of tens of micrometers thick heteroepitaxial layer (e.g., Ge, SiC, and GaAs) on Si having high crystal quality.

  13. NETS FOR PEACH PROTECTED CULTIVATION

    Directory of Open Access Journals (Sweden)

    Evelia Schettini

    2012-06-01

    Full Text Available The aim of this paper was to investigate the radiometric properties of coloured nets used to protect a peach cultivation. The modifications of the solar spectral distribution, mainly in the R and FR wavelength band, influence plant photomorphogenesis by means of the phytochrome and cryptochrome. The phytochrome response is characterized in terms of radiation rate in the red wavelengths (R, 600-700 nm to that in the farred radiation (FR, 700-800 nm, i.e. the R/FR ratio. The effects of the blue radiation (B, 400-500 nm is investigated by the ratio between the blue radiation and the far-red radiation, i.e. the B/FR ratio. A BLUE net, a RED net, a YELLOW net, a PEARL net, a GREY net and a NEUTRAL net were tested in Bari (Italy, latitude 41° 05’ N. Peach trees were located in pots inside the greenhouses and in open field. The growth of the trees cultivated in open field was lower in comparison to the growth of the trees grown under the nets. The RED, PEARL, YELLOW and GREY nets increased the growth of the trees more than the other nets. The nets positively influenced the fruit characteristics, such as fruit weight and flesh firmness.

  14. Fatigue Crack Growth Behavior and Microstructural Mechanisms in Ti-6Al-4V Manufactured by Laser Engineered Net Shaping

    Science.gov (United States)

    2015-12-01

    and defects on fatigue behaviour of directed energy deposited Ti–6Al–4V, Science and Technology of Welding and Joining vol. 20(8), pp. 659-669, 2015...Titanium Alloys Fabricated by Additive Layer Manufacturing Techniques for Dental Implants , Metallurgical and Materials Transactions A, vol. 44(2), pp

  15. Assessing the impacts of climate change and nitrogen deposition on Norway spruce growth in Austria with BIOME-BGC

    Energy Technology Data Exchange (ETDEWEB)

    Eastaugh, Chris S.; Potzelsberger, Elisabeth; Hasenaueur, Hubert

    2011-03-15

    The purpose of this study is to determine if the climate change has had an apparent impact in Austrian forests. This research has been conducted on Norway spruce forests as this is the predominant species in Austria. Growth data between regions which have different temperature and precipitation trendsw was then compared, with results showing increased productivity in all regions thus implying that growth of the forest is driven by other factors than climate. This conclusion is consistent with previous studies supporting that forest growth is mainly driven by increasing nitrogen deposition.

  16. Deposition and characterization of PbO--PbS multilayer thin films by solution growth technique

    OpenAIRE

    EYA, Dominic

    2014-01-01

    PbO-PbS thin films were deposited on glass substrates using the chemical bath deposition (CBD) technique. PbO thin films were deposited from the solution of lead nitrate (Pb(NO3)2) and sodium hydroxide (NaOH). Ethylenediaminetetraacetate (EDTA) served as the complexing agent. Some of the PbO films were used as substrate for the deposition of PbS. The PbS was deposited from alkaline solution of lead nitrate and thioacetamide. Triethanolamine was used as the complexing agent. Some of the ...

  17. Tip-growth mode and base-growth mode of Au-catalyzed zinc oxide nanowires using chemical vapor deposition technique

    Science.gov (United States)

    Pung, Swee-Yong; Choy, Kwang-Leong; Hou, Xianghui

    2010-07-01

    Tip-growth and base-growth modes of Au-catalyzed zinc oxide nanowires (ZnO NWs) were synthesized on Au-film pre-deposited silicon substrates using Chemical Vapor Deposition (CVD) technique. The diameter of tip-growth Au-catalyzed ZnO NWs was proportional to the Au film thickness, whereas the areal density of these NWs was inversely proportional to the Au film thickness. It would be more appropriate to explain the growth of Au-catalyzed ZnO NWs by a combination of Vapor-Liquid-Solid and Vapor-Solid (VLS-VS) mechanisms instead of the conventional VLS mechanism, regardless of tip-growth or base-growth mode of Au-catalyzed ZnO NWs. The competition between the VLS and VS mechanism in the effectiveness of capturing the adsorbed Zn and O atoms would determine the final morphology of ZnO NWs. In addition, Au catalyst promoted the growth rate of NWs as compared to the self-catalyzed ZnO NWs.

  18. Growth and characterization of thin ZnO films deposited on glass substrates by electrodeposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Mouet, T., E-mail: Toufik_mouet@yahoo.fr [Institut PRISME, Universite d' Orleans, LESI-IUT de Chartres, EA 1715, 21 rue Loigny la Bataille, 28000 Chartres (France); Laboratoire de Micro-systeme et Instrumentation, departement d' electronique, faculte des sciences de l' ingenieur, Universite Mentouri de Constantine, Route de Ain el-Bey, 25000 Constantine (Algeria); Devers, T. [Institut PRISME, Universite d' Orleans, LESI-IUT de Chartres, EA 1715, 21 rue Loigny la Bataille, 28000 Chartres (France); Telia, A. [Laboratoire de Micro-systeme et Instrumentation, departement d' electronique, faculte des sciences de l' ingenieur, Universite Mentouri de Constantine, Route de Ain el-Bey, 25000 Constantine (Algeria); Messai, Z.; Harel, V. [Institut PRISME, Universite d' Orleans, LESI-IUT de Chartres, EA 1715, 21 rue Loigny la Bataille, 28000 Chartres (France); Konstantinov, K. [University of Wollongong, Engineering Faculty, Institute for Superconducting and Electronic Materials, 2522 Wollongong (Australia); Kante, I. [Laboratoire de Microscopies et d' Etude de Nanostructures, UFR Sciences, B.P. 1039, 51687 Reims Cedex (France); Ta, M.T. [Institut PRISME, Universite d' Orleans, LESI-IUT de Chartres, EA 1715, 21 rue Loigny la Bataille, 28000 Chartres (France)

    2010-04-15

    Electrodeposition technique was used in order to produce nanometric zinc oxide films on glass insulating substrates. The effect of electrolyte concentration and applied current density on the formation and growth of electrodeposited Zn thin films in aqueous solutions of ZnSO{sub 4} were studied. After a thermal oxidation, a characterization of the structural morphology of the films deposited was carried out by optical microscopy (OM), atomic force microscopy (AFM), scanning electron microscopy (SEM) and by grazing incidence X-rays diffraction (GIXD). These characterization techniques show that the grains size of the films after oxidation at temperature 450 deg. C is between 5 and 15 nm, as well as the structure is polycrystalline nature with several orientations. UV/vis spectrophotometry confirms that it is possible to obtain transparent good ZnO films with an average transmittance of approximately 80% within the visible wavelength region, as well as the optical gap of obtained ZnO films is 3.17 eV.

  19. The Effect of Deposition Parameters on the Growth Rate of Microcrystalline Diamond Powders Synthesized by HFCVD Method

    Directory of Open Access Journals (Sweden)

    Tao Zhang

    2017-07-01

    Full Text Available Conventional diamond powders (<10 μm are generally produced from crushing large-sized diamonds synthesized by high-pressure and high-temperature (HPHT technique, whereas they have many morphological imperfections. In the present work, these powders are served as diamond seeds and regrown by hot filament chemical vapor deposition (HFCVD. Deposition parameters—such as the carbon concentration, substrate temperature, and bias current—which play a determined role in the homoepitaxial growth rate of micron diamonds, are investigated in their respective usual ranges. As shown in the experimental results, under the preconditions of maintaining the good morphology of crystals and inhibiting polycrystal growth, the growth rate of isolated diamond crystals can be controlled at 0.9 μm/h. Besides, the final improved powders have a wide range of particle sizes, which could fail to meet the requirements for commercial powders without the post-process of sieving.

  20. The impact of atmospheric deposition and climate on forest growth in European monitoring plots: An individual tree growth model

    NARCIS (Netherlands)

    Laubhann, D.; Sterba, H.; Reinds, G.J.; Vries, de W.

    2009-01-01

    In the climate change discussion, the possibility of carbon sequestration of forests plays an important role. Therefore, research on the effects of environmental changes on net primary productivity is interesting. In this study we investigated the influence of changing temperature, precipitation and

  1. Growth trends of beech and Norway spruce in Switzerland: The role of nitrogen deposition, ozone, mineral nutrition and climate.

    Science.gov (United States)

    Braun, Sabine; Schindler, Christian; Rihm, Beat

    2017-12-01

    Understanding the effects of nitrogen deposition, ozone and climate on tree growth is important for planning sustainable forest management also in the future. The complex interplay of all these factors cannot be covered by experiments. Here we use observational data of mature forests for studying associations of various biotic and abiotic factors with tree growth. A 30year time series on basal area increment of Fagus sylvatica L. and Picea abies Karst. in Switzerland was analyzed to evaluate the development in relation to a variety of predictors. Basal area increment of Fagus sylvatica has clearly decreased during the observation period. For Picea abies no trend was observed. N deposition of more than 26 (beech) or 20-22kgNha(-1)year(-1) (Norway spruce) was negatively related with basal area increment, in beech stronger than in Norway spruce. High N deposition loads and low foliar K concentrations in Fagus were correlated with increased drought sensitivity. High air temperatures in winter were negatively related with basal area increment in Norway spruce in general and in beech at high N:Mg ratio or high N deposition while on an average the relation was positive in beech. Fructification in beech was negatively related to basal area increment. The increase of fructification observed during the last decades contributed thus to the growth decrease. Ozone flux was significantly and negatively correlated with basal area increment both in beech and Norway spruce. The results show clear non-linear effects of N deposition on stem increment of European beech and Norway spruce as well as strong interactions with climate which have contributed to the growth decrease in beech and may get more important in future. The results not only give suggestions for ecological processes but also show the potential of an integral evaluation of observational data. Copyright © 2017 Elsevier B.V. All rights reserved.

  2. Interference of spray volume, fruit growth and rainfall on spray deposits in citrus black spot control periods

    OpenAIRE

    Demétrius de Araújo; Carlos Gilberto Raetano; Hamilton Humberto Ramos; Douglas Sampaio Ribeiro da Rocha; Evandro Pereira Prado; Viviane Corrêa Aguiar

    2016-01-01

    ABSTRACT: Citrus black spot (CBS) caused by Guignardia citricarpa is one of the most serious Brazilian citrus diseases. This study aims to assess the interference of three application volumes in spray deposition citrus fruit, as well as fruit growth and rainfall effects on spray deposit reduction during the CBS control period. The experiment was carried out in a commercial citrus orchard, with sixteen-year-old trees of the Valencia variety, in Mogi Guaçu, São Paulo State, Brazil. The spray vo...

  3. Effect of deposition conditions on the growth rate and electrical properties of ZnO thin films grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Roro, K.T.; Botha, J.R.; Leitch, A.W.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)

    2008-07-01

    ZnO thin films have been grown on glass substrates by MOCVD. The effect of deposition conditions such as VI/II molar ratio, DEZn flow rate and total reactor pressure on the growth rate and electrical properties of the films was studied. It is found that the growth rate decreases with an increase in the VI/II molar ratio. This behaviour is ascribed to the competitive adsorption of reactant species on the growth surface. The growth rate increases with an increase in DEZn flow rate, as expected. It is shown that the carrier concentration is independent of the DEZn flow rate. An increase in the total reactor pressure yields a decrease in growth rate. This phenomenon is attributed to the depletion of the gas phase due to parasitic prereactions between zinc and oxygen species at high pressure. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Growth of centimeter-scale atomically thin MoS2 films by pulsed laser deposition

    Directory of Open Access Journals (Sweden)

    Gene Siegel

    2015-05-01

    Full Text Available We are reporting the growth of single layer and few-layer MoS2 films on single crystal sapphire substrates using a pulsed-laser deposition technique. A pulsed KrF excimer laser (wavelength: 248 nm; pulse width: 25 ns was used to ablate a polycrystalline MoS2 target. The material thus ablated was deposited on a single crystal sapphire (0001 substrate kept at 700 °C in an ambient vacuum of 10−6 Torr. Detailed characterization of the films was performed using atomic force microscopy (AFM, Raman spectroscopy, UV-Vis spectroscopy, and photoluminescence (PL measurements. The ablation of the MoS2 target by 50 laser pulses (energy density: 1.5 J/cm2 was found to result in the formation of a monolayer of MoS2 as shown by AFM results. In the Raman spectrum, A1g and E12g peaks were observed at 404.6 cm−1 and 384.5 cm−1 with a spacing of 20.1 cm−1, confirming the monolayer thickness of the film. The UV-Vis absorption spectrum exhibited two exciton absorption bands at 672 nm (1.85 eV and 615 nm (2.02 eV, with an energy split of 0.17 eV, which is in excellent agreement with the theoretically predicted value of 0.15 eV. The monolayer MoS2 exhibited a PL peak at 1.85 eV confirming the direct nature of the band-gap. By varying the number of laser pulses, bi-layer, tri-layer, and few-layer MoS2 films were prepared. It was found that as the number of monolayers (n in the MoS2 films increases, the spacing between the A1g and E12g Raman peaks (Δf increases following an empirical relation, Δ f = 26 . 45 − 15 . 42 1 + 1 . 44 n 0 . 9 cm − 1 .

  5. Apple tree growth, net photosynthesis, dark respiration, and specific leaf weight as affected by continuous and intermittent shade

    Energy Technology Data Exchange (ETDEWEB)

    Barden, J.A.

    1977-07-01

    The effects of 80% shade from saran cloth and slats were very similar on young Delicious apple (Malus domestica Borkh.) trees. Shoot-length increase was suppressed about 10% by shade but leaf area was unaffected. Dry weight increase for shaded trees was about 50% of that for trees in full sun. Sun leaves required about 43.1 klx for light saturation and shade leaves needed only about 19.4 klx. Net photosynthesis (Pn) of shade leaves was about 70% of that of sun leaves at light saturation. Dark respiration (Rd) rates were also higher in sun- than shade-leaves. Specific leaf weight (SLW) of leaves near full expansion at the start of the experiment increased 15% under shade whereas sun-leaf SLW increased 40% during the experiment. For leaves unfolding under the differential light treatments, SLW of shade leaves averaged only 55% of sun leaves. 4 figures, 3 tables.

  6. Nucleation and growth mechanisms of Al2O3 atomic layer deposition on synthetic polycrystalline MoS2

    Science.gov (United States)

    Zhang, H.; Chiappe, D.; Meersschaut, J.; Conard, T.; Franquet, A.; Nuytten, T.; Mannarino, M.; Radu, I.; Vandervorst, W.; Delabie, A.

    2017-02-01

    Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) are of great interest for applications in nano-electronic devices. Their incorporation requires the deposition of nm-thin and continuous high-k dielectric layers on the 2D TMDs. Atomic layer deposition (ALD) of high-k dielectric layers is well established on Si surfaces: the importance of a high nucleation density for rapid layer closure is well known and the nucleation mechanisms have been thoroughly investigated. In contrast, the nucleation of ALD on 2D TMD surfaces is less well understood and a quantitative analysis of the deposition process is lacking. Therefore, in this work, we investigate the growth of Al2O3 (using Al(CH3)3/H2O ALD) on MoS2 whereby we attempt to provide a complete insight into the use of several complementary characterization techniques, including X-ray photo-electron spectroscopy, elastic recoil detection analysis, scanning electron microscopy, and time-of-flight secondary ion mass spectrometry. To reveal the inherent reactivity of MoS2, we exclude the impact of surface contamination from a transfer process by direct Al2O3 deposition on synthetic MoS2 layers obtained by a high temperature sulfurization process. It is shown that Al2O3 ALD on the MoS2 surface is strongly inhibited at temperatures between 125°C and 300°C, with no growth occurring on MoS2 crystal basal planes and selective nucleation only at line defects or grain boundaries at MoS2 top surface. During further deposition, the as-formed Al2O3 nano-ribbons grow in both vertical and lateral directions. Eventually, a continuous Al2O3 film is obtained by lateral growth over the MoS2 crystal basal plane, with the point of layer closure determined by the grain size at the MoS2 top surface and the lateral growth rate. The created Al2O3/MoS2 interface consists mainly of van der Waals interactions. The nucleation is improved by contributions of reversible adsorption on the MoS2 basal planes by using low

  7. Influence of growth phase on bacterial deposition: interaction mechanisms in packed-bed column and radial stagnation point flow systems.

    Science.gov (United States)

    Walker, Sharon L; Redman, Jeremy A; Elimelech, Menachem

    2005-09-01

    The influence of bacterial growth stage on cell deposition kinetics has been examined using a mutant of Escherichia coli K12. Two experimental techniques--a packed-bed column and a radial stagnation point flow (RSPF) system--were employed to determine bacterial deposition rates onto quartz surfaces over a wide range of solution ionic strengths. Stationary-phase cells were found to be more adhesive than mid-exponential phase cells in both experimental systems. The divergence in deposition behavior was notably more pronounced in the RSPF than in the packed-bed system. For instance, in the RSPF system, the deposition rate of the stationary-phase cells at 0.03 M ionic strength was 14 times greater than that of the mid-exponential cells. The divergence in the packed-bed system was most significant at 0.01 M, where the deposition rate for the stationary-phase cells was nearly 4 times greater than for the mid-exponential cells. To explain the observed adhesion behavior, the stationary and mid-exponential bacterial cells were characterized for their size, surface charge density, electrophoretic mobility, viability, and hydrophobicity. On the basis of this analysis, it is suggested that the stationary cells have a more heterogeneous distribution of charged functional groups on the bacterial surface than the mid-exponential cells, which results in higher deposition kinetics. Furthermore, because the RSPF system enumerates only bacterial cells retained in primary minima, whereas the packed column captures mostly cells deposited in secondary minima, the difference in the stationary and mid-exponential cell deposition kinetics is much more pronounced in the RSPF system.

  8. Nucleation/Growth Mechanisms and Morphological Evolution of Porous MnO2 Coating Deposited on Graphite for Supercapacitor

    Directory of Open Access Journals (Sweden)

    Wenxin Huang

    2017-10-01

    Full Text Available The nucleation and growth mechanisms of porous MnO2 coating deposited on graphite in MnSO4 solution were investigated in detail by cyclic voltammetry, chronoamperometry and scanning electron microscopy. The electrochemical properties of honeycomb-like MnO2 were evaluated by cycle voltammetry and galvanostatic charge-discharge. Results indicated that MnO2 was synthesized by the following steps: Mn2+→ Mn3++ e-, Mn3++2H2O → MnOOH + 3H+, and MnOOH → MnO2 + H++ e-. The deposition of MnO2 was divided into four stages. A short incubation period (approximately 1.5 s was observed, prior to nucleation. The decreasing trend of the current slowed as time increased due to nucleation and MnO2 growth in the second stage. A huge number of nuclei were formed by instantaneous nucleation, and these nuclei grew and connected with one another at an exceedingly short time (0.5 s. In the third stage, the gaps in-between initial graphite flakes were filled with MnO2 until the morphology of the flakes gradually became similar to that of the MnO2-deposited layer. In the fourth stage, the graphite electrode was covered completely with a thick and dense layer of MnO2 deposits. All MnO2 electrodes at different deposition times obtained nearly the same specific capacitance of approximately 186 F/g, thus indicating that the specific capacitance of the electrodes is not related with deposition time.

  9. Does chronic nitrogen deposition during biomass growth affect atmospheric emissions from biomass burning?

    Science.gov (United States)

    Michael R Giordano; Joey Chong; David R Weise; Akua A Asa-Awuku

    2016-01-01

    Chronic nitrogen deposition has measureable impacts on soil and plant health.We investigate burning emissions from biomass grown in areas of high and low NOx deposition. Gas and aerosolphase emissions were measured as a function of photochemical aging in an environmental chamber at UC-Riverside. Though aerosol chemical speciation was not...

  10. Effects of GHRP-2 and Cysteamine Administration on Growth Performance, Somatotropic Axis Hormone and Muscle Protein Deposition in Yaks (Bos grunniens) with Growth Retardation.

    Science.gov (United States)

    Hu, Rui; Wang, Zhisheng; Peng, Quanhui; Zou, Huawei; Wang, Hongze; Yu, Xiaoqiang; Jing, Xiaoping; Wang, Yixin; Cao, Binghai; Bao, Shanke; Zhang, Wenhua; Zhao, Suonan; Ji, Hanzhong; Kong, Xiangying; Niu, Quanxi

    2016-01-01

    The objective of this study was to investigate the effects of growth hormone-releasing peptide-2 (GHRP-2) and cysteamine (CS) administration on growth performance in yaks with growth retardation and try to elucidate its regulatory mechanisms. Trial 1, thirty-six 1-year-old Qinghai high plateau yaks (body weight 38-83.2 kg) were randomly chosen for body weight and jugular blood samples collection. The relationship between body weight and serum GHRH (P growth retardation (average body weight 54.8 ± 8.24 kg) were randomly selected and assigned to negative control group (NG), GHRP-2 injection group (GG) and cysteamine feeding group (CG), with 5 yaks per group. Another five 1-year-old Qinghai high plateau yaks with normal growth performance (average body weight 75.3 ± 2.43 kg) were selected as positive control group (PG). The average daily gain (ADG) of the GG and CG were significantly higher than those in the PG and NG (P muscle (Pmuscle (P muscle (Pmuscle atrophy F-box (Atrogin-1) and muscle ring finger 1 (MuRF1) mRNA (P Growth retardation in yaks was primarily due to somatotropic axis hormones secretion deficiency. Both GHRP-2 and CS administration can accelerate growth performance and GH, IGF-1 secretion in yaks with growth retardation. GHRP-2 enhanced muscle protein deposition mainly by up-regulated the protein synthesis pathways, whereas CS worked mainly by down-regulated the ubiquitin-proteasome pathway.

  11. Acetic acid effects on enhancement of growth rate and reduction of amorphous carbon deposition on CNT arrays along a growth window in a floating catalyst reactor

    Science.gov (United States)

    Maghrebi, Morteza; Khodadadi, Abbas Ali; Mortazavi, Yadollah; Sane, Ali; Rahimi, Mohsen; Shirazi, Yaser; Tsakadze, Zviad; Mhaisalkar, Subodh

    2009-11-01

    The mm-long carbon nanotube (CNT) arrays were grown in a floating catalyst reactor, using xylene-ferrocene and a small amount of acetic acid as the feed. The CNT arrays deposited on a quartz substrate at several positions along the reactor were extensively characterized using Raman spectroscopy, scanning electron microscopy, X-ray diffraction, high-resolution transmission electron microscopy, and optical microscopy. Various characterization methods consistently reveal that the acetic acid additive to the feed alleviates deposition of amorphous carbon layer, which gradually thickens CNTs along the reactor. The acetic acid also resulted in a higher growth rate along the so-called growth window, where CNT arrays are deposited on the quartz substrate. High-performance liquid chromatography of extracted byproducts (PAHs) confirmed the presence of some polycyclic aromatic hydrocarbons. The solid weight of PAHs decreased upon addition of ferrocene as the catalyst precursor, as well as of acetic acid to xylene feed. The results suggest that primary light products of xylene pyrolysis can be competitive reactants for both catalytic and subsequent pyrolytic reactions. They may also be more efficient feeds for CNT growth than xylene itself.

  12. Relation between growth rate and structure of graphene grown in a 4″ showerhead chemical vapor deposition reactor

    Science.gov (United States)

    Bekdüz, B.; Beckmann, Y.; Meier, J.; Rest, J.; Mertin, W.; Bacher, G.

    2017-05-01

    The chemical vapor deposition (CVD) growth of graphene on copper is controlled by a complex interplay of substrate preparation, substrate temperature, pressure and flow of reactive gases. A large variety of recipes have been suggested in literature, often quite specific to the reactor, which is being used. Here, we report on a relation between growth rate and quality of graphene grown in a scalable 4″ CVD reactor. The growth rate is varied by substrate pre-treatment, chamber pressure, and methane to hydrogen (CH4:H2) ratio, respectively. We found that at lower growth rates graphene grains become hexagonal rather than randomly shaped, which leads to a reduced defect density and a sheet resistance down to 268 Ω/sq.

  13. In situ growth of p and n-type graphene thin films and diodes by pulsed laser deposition

    KAUST Repository

    Sarath Kumar, S. R.

    2013-11-07

    We report the in situ growth of p and n-type graphene thin films by ultraviolet pulsed laser deposition in the presence of argon and nitrogen, respectively. Electron microscopy and Raman studies confirmed the growth, while temperature dependent electrical conductivity and Seebeck coefficient studies confirmed the polarity type of graphene films. Nitrogen doping at different sites of the honeycomb structure, responsible for n-type conduction, is identified using X-ray photoelectron spectroscopy, for films grown in nitrogen. A diode-like rectifying behavior is exhibited by p-n junction diodes fabricated using the graphene films.

  14. Interference of spray volume, fruit growth and rainfall on spray deposits in citrus black spot control periods

    Directory of Open Access Journals (Sweden)

    Demétrius de Araújo

    2016-05-01

    Full Text Available ABSTRACT: Citrus black spot (CBS caused by Guignardia citricarpa is one of the most serious Brazilian citrus diseases. This study aims to assess the interference of three application volumes in spray deposition citrus fruit, as well as fruit growth and rainfall effects on spray deposit reduction during the CBS control period. The experiment was carried out in a commercial citrus orchard, with sixteen-year-old trees of the Valencia variety, in Mogi Guaçu, São Paulo State, Brazil. The spray volumes were: 3.5 (1333L ha-1, 4.5 (1714L ha-1 and 8.5 (3238L ha-1 litres per tree, sprayed by an airblast sprayer using fungicides at recommended periods for disease control. The spray deposition quantification and residue was done by spectrophotometry using a copper oxychloride tracer. Samples were collected in three height zones of the tree (top, middle and bottom and placed between trees on line plantation. Spray depositions were significantly smaller in the first application as a consequence of reduced fruit size. The spray losses on average for each day of rainfall ranged from 4.0 to 5.7%. There was no significant difference between application volumes regarding spray deposition on citrus fruit,which makes possible the reduction of application volumes, however, it is necessary to improve spraying techniques for the top zone of the citrus tree.

  15. Electrophoretic deposition of ZnO nanostructures: Au nanoclusters on Si substrates induce self-assembled nanowire growth

    Energy Technology Data Exchange (ETDEWEB)

    Sandoval, Claudia [Laboratorio de Nanomateriales y Propiedades Dieléctricas, Facultad de Ciencias Exactas y Tecnología, Universidad Nacional de Tucumán, San Miguel de Tucumán (Argentina); Marin, Oscar [CONICET – LAFISO, Facultad de Ciencias Exactas y Tecnología, Universidad Nacional de Tucumán, San Miguel de Tucumán (Argentina); Real, Silvina [Laboratorio de Nanomateriales y Propiedades Dieléctricas, Facultad de Ciencias Exactas y Tecnología, Universidad Nacional de Tucumán, San Miguel de Tucumán (Argentina); Comedi, David [CONICET – LAFISO, Facultad de Ciencias Exactas y Tecnología, Universidad Nacional de Tucumán, San Miguel de Tucumán (Argentina); Tirado, Mónica, E-mail: mtirado@herrera.unt.edu.ar [Laboratorio de Nanomateriales y Propiedades Dieléctricas, Facultad de Ciencias Exactas y Tecnología, Universidad Nacional de Tucumán, San Miguel de Tucumán (Argentina)

    2014-09-15

    Highlights: • ZnO nanowires were grown on silicon substrate by electrophoretic deposition technique without use a porous template. • The growth was induced by Au nanoclusters and was performed at room temperature. • The photoluminescence spectrum for the nanowires obtained shows a broad UV-blue excitonic emission peak and a low emission in the green region. - Abstract: The present work reports the self-assembled growth of ZnO nanowires on silicon substrate with nanometer sized Au clusters using electrophoretic deposition technique at room temperature without a sacrificial template. A colloidal suspension of ≈5 nm sized ZnO nanoparticles dispersed in 2-propanol was used (nanoparticle bandgap of 3.47 eV as determined from absorbance measurements). The results show that the Au nanoclusters on the silicon substrate induce the self-assembly of the ZnO nanoparticles into vertically aligned ZnO nanowires. This effect is tentatively explained as being due to increased electric field intensities near the Au nanoclusters during the electrophoretic deposition. Photoluminescence measurements reveal the presence of quantum confined excitons and a relatively low concentration of deep defects in the nanowires. The electric field guided growth of semiconductor nanostructures at room temperature has great industrial potential as it minimizes production costs and enables the use of substrate materials not withstanding high temperatures.

  16. RESTful NET

    CERN Document Server

    Flanders, Jon

    2008-01-01

    RESTful .NET is the first book that teaches Windows developers to build RESTful web services using the latest Microsoft tools. Written by Windows Communication Foundation (WFC) expert Jon Flanders, this hands-on tutorial demonstrates how you can use WCF and other components of the .NET 3.5 Framework to build, deploy and use REST-based web services in a variety of application scenarios. RESTful architecture offers a simpler approach to building web services than SOAP, SOA, and the cumbersome WS- stack. And WCF has proven to be a flexible technology for building distributed systems not necessa

  17. Phytoplankton growth balanced by clam and zooplankton grazing and net transport into the low-salinity zone of the San Francisco Estuary

    Science.gov (United States)

    Kimmerer, Wim J.; Thompson, Janet K.

    2014-01-01

    We estimated the influence of planktonic and benthic grazing on phytoplankton in the strongly tidal, river-dominated northern San Francisco Estuary using data from an intensive study of the low salinity foodweb in 2006–2008 supplemented with long-term monitoring data. A drop in chlorophyll concentration in 1987 had previously been linked to grazing by the introduced clam Potamocorbula amurensis, but numerous changes in the estuary may be linked to the continued low chlorophyll. We asked whether phytoplankton continued to be suppressed by grazing and what proportion of the grazing was by benthic bivalves. A mass balance of phytoplankton biomass included estimates of primary production and grazing by microzooplankton, mesozooplankton, and clams. Grazing persistently exceeded net phytoplankton growth especially for larger cells, and grazing by microzooplankton often exceeded that by clams. A subsidy of phytoplankton from other regions roughly balanced the excess of grazing over growth. Thus, the influence of bivalve grazing on phytoplankton biomass can be understood only in the context of limits on phytoplankton growth, total grazing, and transport.

  18. The influence from fuel properties on deposit growth in biomass fired boilers; Braensleegenskapernas inverkan paa benaegenheten till paaslag i biobraensleeldade pannor

    Energy Technology Data Exchange (ETDEWEB)

    Graens, Hilde [ENA Kraft AB, Enkoeping (Sweden); Larfeldt, J. [TPS Termiska processer AB, Nykoeping (Sweden)

    2001-03-01

    Experiences from laboratory scale investigations on deposit formation are reported in literature. Few investigations have been performed in large scale especially in grate fired boilers. The insufficient understanding of deposit formation mechanisms explains the lack of methods for deposit reduction. Two most important parameters for deposit prediction in biomass fired grate boilers is the combustion situation in the furnace and the fuel characteristics. The situation in the furnace follows from the operation of the boiler and the air supply, load and fluctuations. Important fuel characteristics are particle size distribution and moisture content. During the season 98/99 a sudden growth of deposits on the furnace walls and superheaters was detected in Ena Krafts boiler for heat and power production. This project aims at finding early indications from the operational system or from the fuel characteristics on such deposit growth in Ena Kraft boiler. Samples of fuel and ash were collected during 99/00 together with data from the operational system. The deposit growth were studied from a camera situated in the furnace and measured using a deposit probe. The probe indicated a deposit growth in the range of 4-20 mg/h. Correlations between the measured deposit growth and the boiler load and the furnace temperature were found. An increase in deposit growth can be explained by variations in fuel composition, particle size distribution, changing air distribution in furnace, vibrations of the grate and load changes. An evaluation of the most important factor/factors for deposit growth is possible only for cases of severe deposit growth, which unfortunately never occurred during this project. Procedures for collecting data has been developed during the project and it has been shown that: (1) the deposit probe is an accurate instrument for detecting deposit growth, (2) aerodynamic classification of the fuel particle distribution is appropriate for boilers with spreader feeding

  19. Salmonella Growth and Deposition Inside Eggs: Implications for Refrigeration as a Control Strategy

    Science.gov (United States)

    A recent risk assessment for Salmonella Enteritidis contamination of eggs concluded that prompt refrigeration of freshly laid eggs was among the most promising disease mitigation strategies. ARS research has provided detailed information about the deposition, movement, and multiplication of Salmonel...

  20. Petri Nets

    Indian Academy of Sciences (India)

    Associate Professor of. Computer Science and. Automation at the Indian. Institute of Science,. Bangalore. His research interests are broadly in the areas of stochastic modeling and scheduling methodologies for future factories; and object oriented modeling. GENERAL I ARTICLE. Petri Nets. 1. Overview and Foundations.

  1. Petri Nets

    Indian Academy of Sciences (India)

    Home; Journals; Resonance – Journal of Science Education; Volume 4; Issue 8. Petri Nets - Overview and Foundations. Y Narahari. General Article Volume 4 Issue 8 August 1999 pp ... Author Affiliations. Y Narahari1. Department ot Computer Science and Automation, Indian Institute of Science, Bangalore 560 012, India.

  2. Effects of Sputtering Parameters on AlN Film Growth on Flexible Hastelloy Tapes by Two-Step Deposition Technique.

    Science.gov (United States)

    Peng, Bin; Gong, Dongdong; Zhang, Wanli; Jiang, Jianying; Shu, Lin; Zhang, Yahui

    2016-08-10

    AlN thin films were deposited on flexible Hastelloy tapes and Si (100) substrate by middle-frequency magnetron sputtering. A layer of Y₂O₃ films was used as a buffer layer for the Hastelloy tapes. A two-step deposition technique was used to prepare the AlN films. The effects of deposition parameters such as sputtering power, N₂/Ar flow rate and sputtering pressure on the microstructure of the AlN thin films were systematically investigated. The results show that the dependency of the full width at half maximum (FWHM) of AlN/Y₂O₃/Hastelloy on the sputtering parameters is similar to that of AlN/Si (100). The FWHM of the AlN (002) peak of the prepared AlN films decreases with increasing sputtering power. The FWHM decreases with the increase of the N₂/Ar flow rate or sputtering pressure, and increases with the further increase of the N₂/Ar flow rate or sputtering pressure. The FWHM of the AlN/Y₂O₃/Hastelloy prepared under optimized parameters is only 3.7° and its root mean square (RMS) roughness is 5.46 nm. Based on the experimental results, the growth mechanism of AlN thin films prepared by the two-step deposition process was explored. This work would assist us in understanding the AlN film's growth mechanism of the two-step deposition process, preparing highly c-axis-oriented AlN films on flexible metal tapes and developing flexible surface acoustic wave (SAW) sensors from an application perspective.

  3. The impact of atmospheric deposition and climate on forest growth in Europe using two empirical modelling approaches

    Science.gov (United States)

    Dobbertin, M.; Solberg, S.; Laubhann, D.; Sterba, H.; Reinds, G. J.; de Vries, W.

    2009-04-01

    Most recent studies show increasing forest growth in central Europe, rather than a decline as was expected due to negative effects of air pollution. While nitrogen deposition, increasing temperature and change in forest management are discussed as possible causes, quantification of the various environmental factors has rarely been undertaken. In our study, we used data from several hundreds of intensive monitoring plots from the ICP Forests network in Europe, ranging from northern Finland to Spain and southern Italy. Five-year growth data for the period 1994-1999 were available from roughly 650 plots to examine the influence of environmental factors on forest growth. Evaluations focused on the influence of nitrogen, sulphur and acid deposition, temperature, precipitation and drought. Concerning the latter meteorological variables we used the deviation from the long-term (30 years) mean. The study included the main tree species common beech (Fagus sylvatica), sessile or pedunculate oak (Quercus petraea and Q. robur), Scots pine (Pinus sylvestris) and Norway spruce (Picea abies). Two very different approaches were used. In the first approach an individual tree-based regression model was applied (Laubhahn et al., 2009), while in the second approach a stand-based model was applied (Solberg et al., 2009). The individual tree-based model had measured basal area increment of each individual tree as a growth response variable and tree size (diameter at breast height), tree competition (basal area of larger trees and stand density index), site factors (e.g. soil C/N ratio, temperature), and environmental factors (e.g. temperature change compared to long-term average, nitrogen and sulphur deposition) as influencing parameters. In the stand-growth model, stem volume increment was used as the growth response variable, after filtering out the expected growth. Expected growth was modelled as a function of site productivity, stand age and a stand density index. Relative volume

  4. Human dental plaque microcosm biofilms: effect of nutrient variation on calcium phosphate deposition and growth.

    Science.gov (United States)

    Wong, Lisa; Sissons, Chris H

    2007-03-01

    Plaque mineralisation is a multi-factorial process involving plaque pH, nucleation, inhibitors and promotors. It is poorly understood because of its complexity. To establish the effects of amino acids and peptones in the simulated oral fluid BMM, a saliva analogue DMM and modifications of these on mineral deposition into dental plaque biofilm microcosms. Microcosms were cultured for up to 35 days in an Artificial Mouth pulsed with sucrose, followed by 10 days periodic treatment with a pH 5.0 calcium-phosphate-monofluorophosphate-urea solution (CPMU). Initial biofilm doubling times were 3-7h, which then slowed and varied under the different nutrient conditions although their pH behaviour was similar. In BMM, mineral deposition was 20% that of DMM, but removal of BMM peptones increased deposition 12-fold. Substitution of the amino acids in DMM by casein did not affect deposition levels, but their removal leaving mucin the sole macronutrient, increased mineral deposition three-fold, reaching 40 mmol Ca/g protein. These substantial increases in mineral deposition when the macronutrient concentration is reduced indicates probable changes in the nucleating, inhibitory and Ca-binding properties of the simulated oral fluids themselves and/or changes in the plaque microbiota and their crystal nucleators and inhibitors.

  5. Fluorinated Graphene Enables the Growth of Inorganic Thin Films by Chemical Bath Deposition on Otherwise Inert Substrates.

    Science.gov (United States)

    Lee, Woo-Kyung; Hernández, Sandra C; Robinson, Jeremy T; Walton, Scott G; Sheehan, Paul E

    2017-01-11

    Chemically modified graphenes (CMGs) offer a means to tune a wide variety of graphene's exceptional properties. Critically, CMGs can be transferred onto a variety of substrates, thereby imparting functionalities to those substrates that would not be obtainable through conventional functionalization. One such application of CMGs is enabling and controlling the subsequent growth of inorganic thin films. In the current study, we demonstrated that CMGs enhance the growth of inorganic films on inert surfaces with poor growth properties. Fluorinated graphene transferred onto polyethylene enabled the dense and homogeneous deposition of a cadmium sulfide (CdS) film grown via chemical bath deposition. We showed that the coverage of the CdS film can be controlled by the degree of fluorination from less than 20% to complete coverage of the film. The approach can also be applied to other technologically important materials such as ZnO. Finally, we demonstrated that electron beam-generated plasma in a SF6-containing background could pattern fluorine onto a graphene/PE sample to selectively grow CdS films on the fluorinated region. Therefore, CMG coatings can tailor the surface properties of polymers and control the growth of inorganic thin films on polymers for the development of flexible electronics.

  6. How closely does stem growth of adult beech (Fagus sylvatica) relate to net carbon gain under experimentally enhanced ozone stress?

    Science.gov (United States)

    Kitao, Mitsutoshi; Winkler, J Barbro; Löw, Markus; Nunn, Angela J; Kuptz, Daniel; Häberle, Karl-Heinz; Reiter, Ilja M; Matyssek, Rainer

    2012-07-01

    The hypothesis was tested that O(3)-induced changes in leaf-level photosynthetic parameters have the capacity of limiting the seasonal photosynthetic carbon gain of adult beech trees. To this end, canopy-level photosynthetic carbon gain and respiratory carbon loss were assessed in European beech (Fagus sylvatica) by using a physiologically based model, integrating environmental and photosynthetic parameters. The latter were derived from leaves at various canopy positions under the ambient O(3) regime, as prevailing at the forest site (control), or under an experimental twice-ambient O(3) regime (elevated O(3)), as released through a free-air canopy O(3) fumigation system. Gross carbon gain at the canopy-level declined by 1.7%, while respiratory carbon loss increased by 4.6% under elevated O(3). As this outcome only partly accounts for the decline in stem growth, O(3)-induced changes in allocation are referred to and discussed as crucial in quantitatively linking carbon gain with stem growth. Copyright © 2012 Elsevier Ltd. All rights reserved.

  7. Growth, structure and stability of sputter-deposited MoS2 thin films.

    Science.gov (United States)

    Kaindl, Reinhard; Bayer, Bernhard C; Resel, Roland; Müller, Thomas; Skakalova, Viera; Habler, Gerlinde; Abart, Rainer; Cherevan, Alexey S; Eder, Dominik; Blatter, Maxime; Fischer, Fabian; Meyer, Jannik C; Polyushkin, Dmitry K; Waldhauser, Wolfgang

    2017-01-01

    Molybdenum disulphide (MoS2) thin films have received increasing interest as device-active layers in low-dimensional electronics and also as novel catalysts in electrochemical processes such as the hydrogen evolution reaction (HER) in electrochemical water splitting. For both types of applications, industrially scalable fabrication methods with good control over the MoS2 film properties are crucial. Here, we investigate scalable physical vapour deposition (PVD) of MoS2 films by magnetron sputtering. MoS2 films with thicknesses from ≈10 to ≈1000 nm were deposited on SiO2/Si and reticulated vitreous carbon (RVC) substrates. Samples deposited at room temperature (RT) and at 400 °C were compared. The deposited MoS2 was characterized by macro- and microscopic X-ray, electron beam and light scattering, scanning and spectroscopic methods as well as electrical device characterization. We find that room-temperature-deposited MoS2 films are amorphous, of smooth surface morphology and easily degraded upon moderate laser-induced annealing in ambient conditions. In contrast, films deposited at 400 °C are nano-crystalline, show a nano-grained surface morphology and are comparatively stable against laser-induced degradation. Interestingly, results from electrical transport measurements indicate an unexpected metallic-like conduction character of the studied PVD MoS2 films, independent of deposition temperature. Possible reasons for these unusual electrical properties of our PVD MoS2 thin films are discussed. A potential application for such conductive nanostructured MoS2 films could be as catalytically active electrodes in (photo-)electrocatalysis and initial electrochemical measurements suggest directions for future work on our PVD MoS2 films.

  8. Growth and property development of convection pass deposits in recovery boilers : final project project.

    Energy Technology Data Exchange (ETDEWEB)

    Lien, Steve J. (Georgia Institute of Technology, Atlanta, GA); Baxter, Larry L.; Frederick, W. James Jr. (Georgia Institute of Technology, Atlanta, GA); Wessel, Richard A. (Babcock & Wilcox Company, Barberton, OH)

    2004-11-01

    As part of the U.S. Department of Energy (DOE) Office of Industrial Technologies (OIT) Industries of the Future (IOF) Forest Products research program, the mechanisms of particle deposition and properties of deposits that form in the convection passes of recovery boilers were investigated. Research from experimental facilities at Sandia National Laboratories, the Institute of Paper Science and Technology (IPST), and the University of Toronto (U of T) was coordinated into a single effort to define the controlling mechanisms and rates of deposition. Deposition rates were recorded on a volumetric and mass basis in a Sandia facility for particle sizes in the range of 0.1 to 150 {micro}m. Deposit thickness, mass, spectral emissivity, thermal conductivity, surface temperature, and apparent density were monitored simultaneously and in situ on instrumented probes that allow determination of heat flux and probe surface temperature. Particle composition and mass deposition rates were also recorded in a U of T facility for particle sizes in the range of 100 to 600 {micro}m. These measurements allowed determination of the liquid content and sticking efficiency of carryover particles that inertially impact on a deposition probe. In addition, information on particulates, stable gas species, gas temperature and velocity were obtained from field tests in an operating recovery boiler. The results were used to develop algorithms appropriate for use in computer codes that simulate recovery boilers. Representative calculations were performed using B&W's comprehensive recovery boiler model to demonstrate the use of the algorithms in such computer codes. Comparisons between observations in commercial systems and model predictions were made to identify algorithm strengths and weaknesses.

  9. Growth of Au-catalysed Si nanowires by low pressure chemical vapour deposition on Si(100) and amorphous Si surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Santoni, A; Villacorta, F Jimenez; Rufoloni, A; Mancini, A [ENEA C.R. Frascati, v. E. Fermi 45, I-00044 Frascati (Italy)

    2006-12-06

    Au-mediated Si nanowires (SiNW) have been grown at low temperatures (500-560 {sup 0}C) on crystalline Si(100) and amorphous Si surfaces by means of low pressure chemical vapour deposition from Si{sub 2}H{sub 6} in the 0.05-1.2 mbar range. The influence of the substrates on the nanowire (NW) growth and morphology has been investigated by means of x-ray photoelectron spectroscopy and scanning electron microscopy. No NW growth has been observed on the Au covered amorphous Si surfaces. On both substrates, the NW exhibit inhomogeneous sidewalls and a new morphology showing NW entrenchment which has been explained as a consequence of vapour-liquid-solid growth termination due to Au diffusion on the SiNW sidewalls.

  10. Growth of autotrophic and root-hemiparasitic understory plants under elevated CO 2 and increased N deposition

    Science.gov (United States)

    Hättenschwiler, Stephan; Körner, Christian

    Effects of atmospheric CO 2 enrichment (280, 420 and 560 μmol CO 2 mol -1) and increased N deposition (0, 30 and 90 kg ha -1 a -1) on Oxalis acetosella, Homogyne alpina, and Melampyrum sylvaticum, growing in model ecosystems beneath spruce stands, were studied. Aboveground biomass in the less-shade-tolerant Homogyne and in the annual hemiparasite Melampyrum was strongly increased with increasing CO 2, but not in the more shade-adapted Oxalis. In contrast, increased N deposition stimulated growth in Oxalis, but had no effect on Homogyne and Melampyrum. Due to spruce canopy closure Homogyne became light limited and its survivorship was strongly correlated with spruce canopy LAI in the second year of the experiment. Our results suggest, that elevated CO 2 facilitates the expansion of Homogyne into less favourable micro-habitats (deeper shade) and that increasing N deposition enables more vigorously growing species like Oxalis to increase in abundance. Growth of the hemiparasite Melampyrum was stimulated indirectly by increased heterotrophic carbon supply (carbon isotope data) from the host ( Picea abies), and thus, this species may also increase in abundance with increasing CO 2. However, possible indirect effects (canopy feedbacks) make predictions of long-term understory development difficult.

  11. In-situ epitaxial growth of heavily phosphorus doped SiGe by low pressure chemical vapor deposition

    CERN Document Server

    Lee, C J

    1998-01-01

    We have studied epitaxial crystal growth of Si sub 1 sub - sub x Ge sub x films on silicon substrates at 550 .deg. C by low pressure chemical vapor deposition. In a low PH sub 3 partial pressure region such as below 1.25x10 sup - sup 3 Pa, both the phosphorus and carrier concentrations increased with increasing PH sub 3 partial pressure, but the deposition rate and the Ge fraction remained constant. In a higher PH sub 3 partial pressure region, the deposition rate, the phosphorus concentration, and the carrier concentration decreased, while the Ge fraction increased. These suggest that high surface coverage of phosphorus suppresses both SiH sub 4 and GeH sub 4 adsorption/reactions on the surfaces, and its suppression effect on SiH sub 4 is actually much stronger than on GeH sub 4. In particular, epitaxial crystal growth is largely controlled by surface coverage effect of phosphorus in a higher PH sub 3 partial pressure region.

  12. Role of the excess monomer in the growth of urea and formaldehyde resin deposit particles.

    Science.gov (United States)

    Hao, Zhixian; Guo, Yuqing; Mansuer, Mulati; Zhu, Junfu; Zhu, Zhirong

    2014-09-15

    The role of excess monomer (i.e., Urea (U) or Formaldehyde (F)) in UF precipitation reaction was investigated at 28°C. The maximum output of the UF resin deposit was found around the U:F molar ratio 1.0:1.0 and this output decreased if excessive urea (or formaldehyde) was used in the reaction system. The excess monomer was considered to decrease the polymerization degree of UF resin deposit and increased the bonding saturation of its copolymerization monomer as well as the solubility of the UF resin deposit. The Influence of the excess monomer on the lamellar crystallinity of the resultant deposit, involving the polymerization degree and bonding saturation of the monomer, was examined. Three different dynamic regions containing excess monomers were revealed according to the behaviors of the deposit nucleation. The density and water absorption of the UF resin particles were finally demonstrated relative to the dynamic regions in their nucleation reactions. Copyright © 2014 Elsevier Inc. All rights reserved.

  13. Effects of surface oxidation of Cu substrates on the growth kinetics of graphene by chemical vapor deposition.

    Science.gov (United States)

    Chang, Ren-Jie; Lee, Chia-Hao; Lee, Min-Ken; Chen, Chun-Wei; Wen, Cheng-Yen

    2017-02-09

    Although the success of graphene research has opened up a new route for wearable electronic and optoelectronic devices, producing graphene with controllable quality and cost-effective growth on a large scale remains challenging due to the lack of understanding about its growth kinetics. Domain boundaries interrupt lattice continuity of graphene; therefore, lowering the nucleation density at the initial stage of graphene growth in the chemical vapor deposition (CVD) process is beneficial for improving the quality of graphene for applications. Herein, we show that by forming an oxide passivation layer on Cu substrates before CVD graphene growth, graphene nucleation density can be effectively decreased. The nucleation mechanism in the presence of an oxide passivation layer is of interest. The analysis of graphene growth kinetics suggests that the thickness of the boundary layer for mass transfer on the substrate surface plays an important role in controlling the reduction rate of the oxide passivation layer. A thick boundary layer created under slow gas flow causes slow reduction of the oxide passivation layer, making finite sites for graphene nucleation. The domain density in a graphene layer is therefore significantly reduced. Graphene sheets of various domain densities (ranging from 104 to 1 mm-2) can be fabricated by suitably choosing the growth parameters. The graphene sheet with a lower density of domain boundaries exhibits better electrical conductivities.

  14. Reaction mechanism studies for platinum nanoparticle growth by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Liang Xinhua; Zhou Yun; Li Jianhua; Weimer, Alan W., E-mail: alan.weimer@colorado.edu [University of Colorado, Department of Chemical and Biological Engineering (United States)

    2011-09-15

    Mass spectrometry is used to study the reaction mechanism of platinum (Pt) atomic layer deposition (ALD) on large quantities of high surface area silica gel particles in a fluidized bed reactor. (Methylcyclopentadienyl)trimethylplatinum [(MeCp)PtMe{sub 3}] and oxygen are used as precursors. Studies are conducted at a substrate temperature of 320 Degree-Sign C. The self-limiting behavior of ALD appears to be disrupted with overexposure of Pt precursor. The amount of the deposited Pt and the size of the Pt nanoparticles increase with an increasing overdose time of Pt precursor. This can be explained by the thermal decomposition of Pt precursor at the reaction temperature of 320 Degree-Sign C and the in situ sintering of Pt nanoparticles forming larger particles. This finding is significant and its understanding is essential for better control of Pt deposition to achieve desirable morphological and structural properties for different application requirements.

  15. Epitaxial growth of delafossite CuFeO2 thin films by pulse laser deposition

    Science.gov (United States)

    Li, S. Z.; Liu, J.; Wang, X. Z.; Yan, B. W.; Li, H.; Liu, J.–M.

    2012-07-01

    CuFeO2 (CFO) is a delafossite-type compound and is a well known p-type semiconductor. Epitaxial CuFeO2 thin films were prepared on Al2O3 (0 0 0 1) substrates by pulsed laser deposition. The deposition, performed at 500 °C and 10 Pa leads to epitaxial phase with extremely low roughness and high density. The oxygen pressure modulates the band energy properties of Cu 2p, Fe 3p and O1s. The results show that the low deposition oxygen pressure contributes to the chemistry ingredient and magnetization properties. Furthermore, spin-glass behavior is identified and weak-ferromagnetization property is found at a low temperature about ∼5 K.

  16. Epitaxial growth of delafossite CuFeO{sub 2} thin films by pulse laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Li, S.Z. [School of Physics, Huangshi Institute of Technology, Huangshi 435003 (China); Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China); Liu, J. [Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Wang, X.Z [Department of Physics, Hubei Normal University, Huangshi 435000 (China); Yan, B.W.; Li, H. [School of Physics, Huangshi Institute of Technology, Huangshi 435003 (China); Liu, J.-M., E-mail: liujm@nju.edu.cn [Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China)

    2012-07-01

    CuFeO{sub 2} (CFO) is a delafossite-type compound and is a well known p-type semiconductor. Epitaxial CuFeO{sub 2} thin films were prepared on Al{sub 2}O{sub 3} (0 0 0 1) substrates by pulsed laser deposition. The deposition, performed at 500 Degree-Sign C and 10 Pa leads to epitaxial phase with extremely low roughness and high density. The oxygen pressure modulates the band energy properties of Cu 2p, Fe 3p and O1s. The results show that the low deposition oxygen pressure contributes to the chemistry ingredient and magnetization properties. Furthermore, spin-glass behavior is identified and weak-ferromagnetization property is found at a low temperature about {approx}5 K.

  17. Effects of polymethylmethacrylate-transfer residues on the growth of organic semiconductor molecules on chemical vapor deposited graphene

    Energy Technology Data Exchange (ETDEWEB)

    Kratzer, Markus, E-mail: markus.kratzer@unileoben.ac.at; Teichert, Christian [Institute of Physics, Montanuniversitaet Leoben, Franz Josef Straße 18, A 8700 Leoben (Austria); Bayer, Bernhard C. [Department of Engineering, University of Cambridge, Cambridge CB3 0FA (United Kingdom); Faculty of Physics, University of Vienna, Boltzmanngasse 5, A 1090 Vienna (Austria); Kidambi, Piran R. [Department of Engineering, University of Cambridge, Cambridge CB3 0FA (United Kingdom); Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Matković, Aleksandar; Gajić, Radoš [Institute of Physics, Department for Solid State Physics and New Materials, University of Belgrade, Pregrevica 118, 11080 Belgrade (Serbia); Cabrero-Vilatela, Andrea; Weatherup, Robert S.; Hofmann, Stephan [Department of Engineering, University of Cambridge, Cambridge CB3 0FA (United Kingdom)

    2015-03-09

    Scalably grown and transferred graphene is a highly promising material for organic electronic applications, but controlled interfacing of graphene thereby remains a key challenge. Here, we study the growth characteristics of the important organic semiconductor molecule para-hexaphenyl (6P) on chemical vapor deposited graphene that has been transferred with polymethylmethacrylate (PMMA) onto oxidized Si wafer supports. A particular focus is on the influence of PMMA residual contamination, which we systematically reduce by H{sub 2} annealing prior to 6P deposition. We find that 6P grows in a flat-lying needle-type morphology, surprisingly independent of the level of PMMA residue and of graphene defects. Wrinkles in the graphene typically act as preferential nucleation centers. Residual PMMA does however limit the length of the resulting 6P needles by restricting molecular diffusion/attachment. We discuss the implications for organic device fabrication, with particular regard to contamination and defect tolerance.

  18. Growth and characterization of ZnO films deposited by chemical bath and annealed by microwaves (CBD-AμW)

    Science.gov (United States)

    Díaz-Reyes, J.; Martínez-Juárez, J.; García, M. L.; Juárez, G.; Galeazzi, R.

    2010-06-01

    A study of the growth and the physical properties of ZnO films deposited by chemical bath technique and annealed by microwave are presented. For the deposition solution the molar ratio between zinc nitrate and urea is varied in a range of 1:1... 1:10. By X-ray obtains that layers have hexagonal polycrystalline wurtzite type unitary cell. The Raman spectra show the first order experimental Raman spectra of ZnO. The first order Raman modes are identified in the ZnO Raman spectra. The 300K photoluminescence shows radiative bands labelled by red, yellow, green and violet bands, which are associated to defects of oxygen and zinc vacancies. By EDS measurements determined their stoichiometry, which allows relating it with the intensity of radiative bands associated to oxygen and zinc vacancies.

  19. Electronic states and growth modes of Zn atoms deposited on Cu(111) studied by XPS, UPS and DFT

    Science.gov (United States)

    Koitaya, Takanori; Shiozawa, Yuichiro; Yoshikura, Yuki; Mukai, Kozo; Yoshimoto, Shinya; Torii, Siro; Muttaqien, Fahdzi; Hamamoto, Yuji; Inagaki, Kouji; Morikawa, Yoshitada; Yoshinobu, Jun

    2017-09-01

    Electronic states and growth modes of the Zn-deposited Cu(111) surface at 300 K were quantitatively studied using core-level and valence photoelectron spectroscopies. Both Cu 2p and Zn 2p core-levels shifted to higher binding energy with increasing the amount of deposited Zn up to multilayer. The origin of the core-level shift of Cu 2p was further investigated by density functional theory calculations; the shift of the Cu 2p peak results from the change in the effective electrostatic potential (initial state effect) caused by the formation of Zn-Cu surface alloy, and the increase of coordination numbers of surface Cu atoms by Zn overlayer. The observed valence photoelectron spectra show the formation of the two atomic-layer Zn-Cu alloy up to the Zn coverage of 1 ML, followed by the formation of three-dimensional Zn islands on the alloyed surface at 300 K.

  20. Impact of microcrystalline silicon carbide growth using hot-wire chemical vapor deposition on crystalline silicon surface passivation

    Energy Technology Data Exchange (ETDEWEB)

    Pomaska, M., E-mail: m.pomaksa@fz-juelich.de [Forschungszentrum Jülich, IEK5-Photovoltaics, Wilhelm-Johnen-Strasse, 52425 Jülich (Germany); Beyer, W. [Helmholtz-Zentrum Berlin für Materialien und Energie, Silicon Photovoltaics, Kekuléstrasse 5, 12489 Berlin (Germany); Neumann, E. [Forschungszentrum Jülich, PGI-8-PT, Wilhelm-Johnen-Strasse, 52425 Jülich (Germany); Finger, F.; Ding, K. [Forschungszentrum Jülich, IEK5-Photovoltaics, Wilhelm-Johnen-Strasse, 52425 Jülich (Germany)

    2015-11-30

    Highly crystalline microcrystalline silicon carbide (μc-SiC:H) with excellent optoelectronic material properties is a promising candidate as highly transparent doped layer in silicon heterojunction (SHJ) solar cells. These high quality materials are usually produced using hot wire chemical vapor deposition under aggressive growth conditions giving rise to the removal of the underlying passivation layer and thus the deterioration of the crystalline silicon (c-Si) surface passivation. In this work, we introduced the n-type μc-SiC:H/n-type μc-SiO{sub x}:H/intrinsic a-SiO{sub x}:H stack as a front layer configuration for p-type SHJ solar cells with the μc-SiO{sub x}:H layer acting as an etch-resistant layer against the reactive deposition conditions during the μc-SiC:H growth. We observed that the unfavorable expansion of micro-voids at the c-Si interface due to the in-diffusion of hydrogen atoms through the layer stack might be responsible for the deterioration of surface passivation. Excellent lifetime values were achieved under deposition conditions which are needed to grow high quality μc-SiC:H layers for SHJ solar cells. - Highlights: • High surface passivation quality was preserved after μc-SiC:H deposition. • μc-SiC:H/μc-SiO{sub x}:H/a-SiO{sub x}:H stack a promising front layer configuration • Void expansion at a-SiO{sub x}:H/c-Si interface for deteriorated surface passivation • μc-SiC:H provides a high transparency and electrical conductivity.

  1. Towards engineered branch placement: Unreal™ match between vapour-liquid-solid glancing angle deposition nanowire growth and simulation

    Science.gov (United States)

    Taschuk, M. T.; Tucker, R. T.; LaForge, J. M.; Beaudry, A. L.; Kupsta, M. R.; Brett, M. J.

    2013-12-01

    The vapour-liquid-solid glancing angle deposition (VLS-GLAD) process is capable of producing complex nanotree structures with control over azimuthal branch orientation and height. We have developed a thin film growth simulation including ballistic deposition, simplified surface diffusion, and droplet-mediated cubic crystal growth for the VLS-GLAD process using the UnrealTM Development Kit. The use of a commercial game engine has provided an interactive environment while allowing a custom physics implementation. Our simulation's output is verified against experimental data, including a volumetric film reconstruction produced using focused ion beam and scanning-electron microscopy (SEM), crystallographic texture, and morphological characteristics such as branch orientation. We achieve excellent morphological and texture agreement with experimental data, as well as qualitative agreement with SEM imagery. The simplified physics in our model reproduces the experimental films, indicating that the dominant role flux geometry plays in the VLS-GLAD competitive growth process responsible for azimuthally oriented branches and biaxial crystal texture evolution. The simulation's successful reproduction of experimental data indicates that it should have predictive power in designing novel VLS-GLAD structures.

  2. Self-catalytic growth of tin oxide nanowires by chemical vapor deposition process

    CSIR Research Space (South Africa)

    Thabethe, BS

    2013-01-01

    Full Text Available The authors report on the synthesis of tin oxide (SnO(sub2)) nanowires by a chemical vapor deposition (CVD) process. Commercially bought SnO nanopowders were vaporized at 1050°C for 30 minutes with argon gas continuously passing through the system...

  3. In situ growth optimization in focused electron-beam induced deposition

    Directory of Open Access Journals (Sweden)

    Paul M. Weirich

    2013-12-01

    Full Text Available We present the application of an evolutionary genetic algorithm for the in situ optimization of nanostructures that are prepared by focused electron-beam-induced deposition (FEBID. It allows us to tune the properties of the deposits towards the highest conductivity by using the time gradient of the measured in situ rate of change of conductance as the fitness parameter for the algorithm. The effectiveness of the procedure is presented for the precursor W(CO6 as well as for post-treatment of Pt–C deposits, which were obtained by the dissociation of MeCpPt(Me3. For W(CO6-based structures an increase of conductivity by one order of magnitude can be achieved, whereas the effect for MeCpPt(Me3 is largely suppressed. The presented technique can be applied to all beam-induced deposition processes and has great potential for a further optimization or tuning of parameters for nanostructures that are prepared by FEBID or related techniques.

  4. Epitaxial growth of solution deposited YBa2Cu3O7-delta films

    NARCIS (Netherlands)

    Gobel, OF; Du, [No Value; Hibma, T; von Lampe, [No Value; Zygalsky, F; Steiner, U

    2004-01-01

    The solution deposition of YBa2Cu3O7-delta (Y123) high temperature superconducting thin films was studied. The films were prepared from a polymer-containing precursor onto SrTiO3 ( 001) and LaAlO3 ( 001) substrates and mineralized at high temperatures. The process depended on details of the film

  5. Influence of the catalyst type on the growth of carbon nanotubes via methane chemical vapor deposition

    NARCIS (Netherlands)

    Jodin, Lucie; Dupuis, Anne-Claire; Rouvière, Emmanuelle; Reiss, Peter

    2006-01-01

    The preparation of the catalyst is one of the key parameters which governs the quality of carbon nanotubes (CNTs) grown by catalyzed chemical vapor deposition (CVD). We investigated the influence of three different procedures of catalyst preparation on the type and diameter of CNTs formed under

  6. Crystal growth mechanism of calcium phosphate coatings on titanium by electrochemical deposition

    NARCIS (Netherlands)

    Mokabber, Taraneh; Lu, Liqiang; van Rijn, Patrick; Vakis, Antonis I.; Pei, Yutao T.

    2018-01-01

    The pulsed current electrochemical deposition of calcium phosphate (Ca-P) coatings on a titanium substrate was investigated in this study. The effects of applied voltage and H2O2 concentration in the electrolyte solution on the phase composition and coating morphology were studied using X-ray

  7. Fabrication of Nanolaminates with Ultrathin Nanolayers Using Atomic Layer Deposition: Nucleation & Growth Issues

    Science.gov (United States)

    2009-02-01

    Tecnologia de Superficies y Materiales (SMCTSM), XXVII Congreso Nacional, Oaxaca, Oaxaca, Mexico, September 26, 2007. 26. "Atomic Layer Deposition of...Nanolaminates: Fabrication and Properties" (Plenary Lecture), Sociedad Mexicana de Ciencia y Tecnologia de Superficies y Materiales (SMCTSM), XXVII

  8. Pengaruh Capital Adequacy Ratio (CAR, Beban Operasional Pendapatan Operasional (BOPO, Return on Asset (ROA dan Net Interest Margin (NIM terhadap Financing Deposit Ratio (FRD di PT. BPRS Bhakti Sumekar Sumenep (Periode 2011-2015

    Directory of Open Access Journals (Sweden)

    Cholida Noerainon

    2016-06-01

    Full Text Available The Bank is an industry whose business activities relying on public confidence so that the health of banks is done by maintaining the quality so that the bank can meet its obligations and maintain its performance. The purpose bank will be realized if the bank is able to significantly improve their performance optimal. To be able to function properly, the banks should have enough capital, maintaining its asset quality with a good, well-managed and operated by the precautionary principle thus generate enough profit to maintain the continuity of its business and maintain its liquidity so that it can meet its obligations at any time. the purpose of this study is the first: To determine the effect of the Capital Adequacy Ratio (CAR, Operating Expenses Towards Operating Income (OEOI, Return on Assets (ROA and Net Interest Margin (NIM simultaneously to the Financial to Deposit Ratio (FDR PT. BPRS Bhakti Sumekar Sumenep. Second: To determine the effect of the Capital Adequacy Ratio (CAR, Operating Expenses Towards Operating Income  (OEOI, Return on Assets (ROA and Net Interest Margin (NIM partially on Financial to Deposit Ratio (FDR PT. BPRS Bhakti Sumekar Sumenep. Third: To determine which variables are the most dominant influencing on Financial to Deposit Ratio (FDR at PT. BPRS Bhakti Sumekar Sumenep. In this research uses quantitative methods with the technique of multiple linear regression analysis with the help of SPSS analysis tools, while proving the hypothesis using a calculation T test and F test. The data used is secondary data namely quarterly publication report documentation results. The research results shows that the variables CAR, OEOI, ROA and NIM simultaneously no effect  towards FDR PT. BPRS Bhakti Sumekar Sumenep because Sig. > 0.05 and the value of Fcount

  9. Role of boundary layer diffusion in vapor deposition growth of chalcogenide nanosheets: the case of GeS.

    Science.gov (United States)

    Li, Chun; Huang, Liang; Snigdha, Gayatri Pongur; Yu, Yifei; Cao, Linyou

    2012-10-23

    We report a synthesis of single-crystalline two-dimensional GeS nanosheets using vapor deposition processes and show that the growth behavior of the nanosheet is substantially different from those of other nanomaterials and thin films grown by vapor depositions. The nanosheet growth is subject to strong influences of the diffusion of source materials through the boundary layer of gas flows. This boundary layer diffusion is found to be the rate-determining step of the growth under typical experimental conditions, evidenced by a substantial dependence of the nanosheet's size on diffusion fluxes. We also find that high-quality GeS nanosheets can grow only in the diffusion-limited regime, as the crystalline quality substantially deteriorates when the rate-determining step is changed away from the boundary layer diffusion. We establish a simple model to analyze the diffusion dynamics in experiments. Our analysis uncovers an intuitive correlation of diffusion flux with the partial pressure of source materials, the flow rate of carrier gas, and the total pressure in the synthetic setup. The observed significant role of boundary layer diffusions in the growth is unique for nanosheets. It may be correlated with the high growth rate of GeS nanosheets, ~3-5 μm/min, which is 1 order of magnitude higher than other nanomaterials (such as nanowires) and thin films. This fundamental understanding of the effect of boundary layer diffusions may generally apply to other chalcogenide nanosheets that can grow rapidly. It can provide useful guidance for the development of general paradigms to control the synthesis of nanosheets.

  10. Conjugated linoleic acid alters growth performance, tissue lipid deposition, and fatty acid composition of darkbarbel catfish (Pelteobagrus vachelli).

    Science.gov (United States)

    Dong, Gui-Fang; Liu, Wen-Zuo; Wu, Lin-Zhou; Yu, Deng-Hang; Huang, Feng; Li, Peng-Cheng; Yang, Yan-Ou

    2015-02-01

    Fatty liver syndrome is a prevalent problem of farmed fish. Conjugated linoleic acid (CLA) has received increased attention recently as a fat-reducing fatty acid to control fat deposition in mammals. Therefore, the aim of the present study was to determine whether dietary CLA can reduce tissue lipid content of darkbarbel catfish (Pelteobagrus vachelli) and whether decreased lipid content is partially due to alterations in lipid metabolism enzyme activities and fatty acid profiles. A 76-day feeding trial was conducted to investigate the effect of dietary CLA on the growth, tissue lipid deposition, and fatty acid composition of darkbarbel catfish. Five diets containing 0 % (control), 0.5 % (CLA0.5), 1 % (CLA1), 2 % (CLA2), and 3 % (CLA3) CLA levels were evaluated. Results showed that fish fed with 2-3 % CLA diets showed a significantly lower specific growth rate and feed conversion efficiency than those fed with the control diet. Dietary CLA decreased the lipid contents in the liver and intraperitoneal fat with the CLA levels from 1 to 3 %. Fish fed with 2-3 % CLA diets showed significantly higher lipoprotein lipase and hepatic triacylglycerol lipase activities in liver than those of fish fed with the control, and fish fed with 1-3 % CLA diets had significantly higher pancreatic triacylglycerol lipase activities in liver than those of fish fed with the control. Dietary CLA was incorporated into liver, intraperitoneal fat, and muscle lipids, with higher percentages observed in liver compared with other tissues. Liver CLA deposition was at the expense of monounsaturated fatty acids (MUFA). In contrast, CLA deposition appeared to be primarily at the expense of MUFA and n-3 polyunsaturated fatty acids (PUFA) in the intraperitoneal fat, whereas in muscle it was at the expense of n-3 PUFA. Our results suggested that CLA at a 1 % dose can reduce liver lipid content without eliciting any negative effect on growth rate in darkbarbel catfish. This lipid-lowering effect could

  11. Terraced copper growth deposited onto Teflon AF1600 by the excimer laser irradiation of Cu(hfac)TMVS

    Energy Technology Data Exchange (ETDEWEB)

    Popovici, D.; Piyakis, K.; Sacher, E.; Meunier, M. [Ecole Polytechnique, Montreal, Quebec (Canada)

    1996-12-31

    The authors are studying the feasibility of constructing Cu/fluoropolymer multilayer devices, in an effort to reduce both metal R and insulator C, a necessary condition in VLSI and GSI microelectronic applications. The laser chemical vapor deposition (LCVD) of the organometallic precursor Cu(hfac)TMVS (hexafluoroacetylacetonate)(trimethylvinylsilane) is used to grow copper films on a Teflon AF1600 substrate. Exposure to excimer laser radiation at 248 nm results in a terraced copper growth. A simple model, based on interference effects in the Teflon and copper layers, is presented to account for this structure.

  12. Growth monitoring during pulsed laser deposition of oxides using atomic force microscopy

    NARCIS (Netherlands)

    Wessels, W.A.

    2016-01-01

    Throughout this thesis, an atomic force microscopy (AFM) design, containing a high resonance frequency AFM scanner together with high bandwidth SPM electronics is demonstrated, with focus on growth monitoring during PLD of oxides. Moreover, perovskite oxide growth (related) studies are explored

  13. Could growth factor-mediated extracellular matrix deposition and degradation offer the ground for directed pharmacological targeting in fibrosarcoma?

    Science.gov (United States)

    Nikitovic, D; Berdiaki, A; Banos, A; Tsatsakis, A; Karamanos, N K; Tzanakakis, G N

    2013-01-01

    The specific organization of the tumor extracellular matrix (ECM) is an intrinsic and basic step in the convoluted pathways of tumorigenesis. Fibrosarcoma is a rare, lethal, malignant tumor originating from fibroblasts, characterized by the formation of an abundant ECM. Fibroblastoid cells undergoing malignant transformation specifically alter composition and organization of their ECM to facilitate growth, survival and invasion. Fibrosarcoma cells were shown to have a high content and turnover of ECM components including hyaluronan, proteoglycans, collagens, fibronectin and laminin. Cell signaling by endogenous growth factors, such as TGFβ, EGF, FGF2, VEGF and IFG-I, is directly correlated to ECM remodeling, stroma formation and fibrosarcoma progression. In this regard, growth factors affect the expression of matrix macromolecules, such as secreted and cell-associated proteoglycans, hyaluronan and its receptors CD44 and RHAMM, as well as the expression and activity of matrix- degrading metalloproteinases, which are of critical importance in tissue remodeling and fibrosarcoma progression. Therefore, therapeutic approaches considering growth factors and their receptors as well as downstream signaling in human cancers may well be pharmacological targets being currently explored. In this article, we focus on growth factor signaling regulating fibrosarcoma cell ECM organization at the level of deposition and degradation of ECM macromolecules, the relation of ECM remodeling with fibrosarcoma cell malignant behaviour as well as the putative strategies for its therapeutic intervention.

  14. Asymmetric growth of bilayer graphene on copper enclosures using low-pressure chemical vapor deposition.

    Science.gov (United States)

    Fang, Wenjing; Hsu, Allen L; Song, Yi; Birdwell, Anthony G; Amani, Matin; Dubey, Madan; Dresselhaus, Mildred S; Palacios, Tomás; Kong, Jing

    2014-06-24

    In this work, we investigated the growth mechanisms of bilayer graphene on the outside surface of Cu enclosures at low pressures. We observed that the asymmetric growth environment of a Cu enclosure can yield a much higher (up to 100%) bilayer coverage on the outside surface as compared to the bilayer growth on a flat Cu foil, where both sides are exposed to the same growth environment. By simultaneously examining the graphene films grown on both the outside and inside surfaces of the Cu enclosure, we find that carbon can diffuse from the inside surface to the outside via exposed copper regions on the inside surface. The kinetics of this process are examined by coupling the asymmetric growth between the two surfaces through a carbon diffusion model. Finally, using these results, we show that the coverage of bilayer graphene can be tuned simply by changing the thickness of the Cu foil, further confirming our model of carbon delivery through the Cu foil.

  15. The allelopathic effects of invasive plant Solidago canadensis on seed germination and growth of Lactuca sativa enhanced by different types of acid deposition.

    Science.gov (United States)

    Wang, Congyan; Xiao, Hongguang; Zhao, Lulu; Liu, Jun; Wang, Lei; Zhang, Fei; Shi, Yanchun; Du, Daolin

    2016-04-01

    Invasive species can exhibit allelopathic effects on native species. Meanwhile, the types of acid deposition are gradually changing. Thus, the allelopathic effects of invasive species on seed germination and growth of native species may be altered or even enhanced under conditions with diversified acid deposition. This study aims to assess the allelopathic effects (using leaves extracts) of invasive plant Solidago canadensis on seed germination and growth of native species Lactuca sativa treated with five types of acid deposition with different SO4(2-) to NO3(-) ratios (1:0, sulfuric acid; 5:1, sulfuric-rich acid; 1:1, mixed acid; 1:5, nitric-rich acid; 0:1, nitric acid). Solidago canadensis leaf extracts exhibited significantly allelopathic effects on germination index, vigor index, and germination rate index of L. sativa. High concentration of S. canadensis leaf extracts also similarly exhibited significantly allelopathic effects on root length of L. sativa. This may be due to that S. canadensis could release allelochemicals and then trigger allelopathic effects on seed germination and growth of L. sativa. Acid deposition exhibited significantly negative effects on seedling biomass, root length, seedling height, germination index, vigor index, and germination rate index of L. sativa. This may be ascribed to the decreased soil pH values mediated by acid deposition which could produce toxic effects on seedling growth. Sulfuric acid deposition triggered more toxic effects on seedling biomass and vigor index of L. sativa than nitric acid deposition. This may be attributing to the difference in exchange capacity with hydroxyl groups (OH(-)) between SO4(2-) and NO3(-) as well as the fertilizing effects mediated by nitric deposition. All types of acid deposition significantly enhanced the allelopathic effects of S. canadensis on root length, germination index, vigor index, and germination rate index of L. sativa. This may be due to the negatively synergistic effects of

  16. Modelling growth performance and feeding behaviour of Atlantic salmon (Salmo salar L.) in commercial-size aquaculture net pens: Model details and validation through full-scale experiments.

    Science.gov (United States)

    Føre, Martin; Alver, Morten; Alfredsen, Jo Arve; Marafioti, Giancarlo; Senneset, Gunnar; Birkevold, Jens; Willumsen, Finn Victor; Lange, Guttorm; Espmark, Åsa; Terjesen, Bendik Fyhn

    2016-11-01

    contracted a disease (PD) midway through the experiment, thus resulting in a detailed dataset containing information on how PD affects salmon growth, which can serve as a foundation to understanding disease effects better. Furthermore, the manuscript describes an integrated mathematical model that is able to predict fish behaviour, growth and energetics of salmon in response to commercial production conditions, including a dynamic model of the distribution of feed pellets in the production volume. To our knowledge, there exist no models aspiring to estimate such a broad spectre of the dynamics in commercial aquaculture production cages. We believe this model could serve as a future tool to predict the dynamics in commercial aquaculture net pens, and that it could represent a building block that can be utilised in a future development of knowledge-driven decision-support tools for the salmon industry.

  17. Highly oriented, free-standing, superconducting NbN films growth on chemical vapor deposited graphene

    Directory of Open Access Journals (Sweden)

    Garima Saraswat

    2014-05-01

    Full Text Available NbN films are grown on chemical vapor deposited graphene using dc magnetron sputtering. The orientation and transition temperature of the deposited films is studied as a function of substrate temperature. A superconducting transition temperature of 14 K is obtained for highly oriented (111 films grown at substrate temperature of 150 °C, which is comparable to epitaxial films grown on MgO and sapphire substrates. These films show a considerably high upper critical field of ∼33 T. In addition, we demonstrate a process for obtaining flexible, free-standing NbN films by delaminating graphene from the substrate using a simple wet etching technique. These free-standing NbN layers can be transferred to any substrate, potentially enabling a range of novel superconducting thin-film applications.

  18. Growth parameter enhancement for MoS{sub 2} thin films synthesized by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Serna, Martha I.; Higgins, Marissa; Quevedo-Lopez, Manuel A. [Materials Science and Engineering Department, The University of Texas at Dallas, 800 W Campbell Road RL 10, Richardson TX 75080 (United States); Moreno, Salvador [Department of Mechanical Engineering, The University of Texas at Dallas, Richardson, TX 75080 (United States); Choi, Hyunjoo [Department of Advanced Materials Engineering, Kookmin University, Jeongneung-dong Seongbuk-gu, Seoul 136-702 (Korea, Republic of); Minary-Jolandan, Majid [Department of Mechanical Engineering, The University of Texas at Dallas, Richardson, TX 75080 (United States); Alan MacDiarmid Nanotech Institute, The University of Texas at Dallas, 800 W Campbell Road RL 10, Richardson TX 75080 (United States)

    2016-12-15

    Two-dimensional materials such as graphene and MoS{sub 2} have been the main focus of intense research efforts over the past few years. The most common method of exfoliating these materials, although efficient for lab-scale experiments, is not acceptable for large area and practical applications. Here, we report the deposition of MoS{sub 2} layered films on amorphous (SiO{sub 2}) and crystalline substrates (sapphire) using a pulsed laser deposition (PLD) method. Increased substrate temperature (∝700 C) and laser energy density (>530 mJ /cm{sup 2}) promotes crystalline MoS{sub 2} films < 20 nm, as demonstrated by fast Fourier transform (FFT) and transmission electron microscopy (TEM). The method reported here opens the possibility for large area layered MoS{sub 2} films by using a laser ablation processes. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. Epitaxial growth of wide-band-gap ZnGa2O4 films by mist chemical vapor deposition

    Science.gov (United States)

    Oshima, Takayoshi; Niwa, Mifuyu; Mukai, Akira; Nagami, Tomohito; Suyama, Toshihisa; Ohtomo, Akira

    2014-01-01

    ZnGa2O4 films were grown on (100) MgAl2O4 substrates by mist chemical vapor deposition. A growth window for obtaining single spinel phase was revealed by systematic variations of precursor Zn/Ga ratio and growth temperature, where the cation stoichiometry was maintained through sublimation of excess Zn species before crystalized into ZnO. The epitaxial relationship to the substrate was identified to be cube on cube with no rotation domain. The optical properties of the fully relaxed film were characterized by using cathodoluminescence (CL) and absorption spectroscopies. A large Stokes shift was found between the CL peak energy (3.4 eV) and fundamental absorption edge (4.6 eV), reflecting typical property of Ga-based wide-band-gap oxide semiconductors.

  20. Growth of cobalt ultra-thin films deposited on Pt(100) surfaces: An Auger electron spectroscopy study

    Science.gov (United States)

    Boeglin, C.; Carrière, B.; Deville, J. P.; Heckmann, O.; Leroux, C.; Panissod, P.

    1989-04-01

    To investigate the possibility of building Co/Pt modulated multilayers, attention has been paid to the early stages of interface formation between cobalt and platinum. The growth of cobalt layers less than 10 monolayers thick on Pt(100) surfaces has been studied by Auger electron spectroscopy. Growth kinetics obtained by AES show that two different models of interface formation can be possible: the Volmer-Weber case (cobalt islands) or an interdiffusion process between the two metals (similar to suicide formation). Looking at the fine structure of the low-energy platinum Auger transitions suggests that there is a strong interaction between cobalt and platinum as soon as the equivalent of a cobalt 2 monolayer coverage is deposited. This would favor the interdiffusion process model.

  1. Growth of ZnO thin films on GaAs by pulsed laser deposition

    NARCIS (Netherlands)

    Craciun, V.; Elders, J.; Gardeniers, Johannes G.E.; Geretovsky, J.; Boyd, Ian W.

    1995-01-01

    ZnO thin films have been grown on GaAs substrates using the pulsed laser deposition technique with or without a photodeposited SiO2 buffer layer. The presence of the SiO2 layer has a beneficial effect on the crystalline quality of the grown ZnO films. Highly c-axis oriented ZnO films having a full

  2. Catalyst-free growth and tailoring morphology of zinc oxide nanostructures by plasma-enhanced deposition at low temperature

    Energy Technology Data Exchange (ETDEWEB)

    Chen, W. Z. [Quanzhou Normal University, Key Laboratory of Information Functional Material for Fujian Higher Education, College of Physics & Information Engineering (China); Wang, B. B. [Chongqing University of Technology, College of Chemical Engineering (China); Qu, Y. Z.; Huang, X. [Xiamen University, College of Energy, Xiang’an Campus (China); Ostrikov, K. [Queensland University of Technology, School of Chemistry, Physics and Mechanical Engineering (Australia); Levchenko, I.; Xu, S. [Nanyang Technological University, Plasma Sources and Applications Centre, National Institute of Education (Singapore); Cheng, Q. J., E-mail: qijin.cheng@xmu.edu.cn [Xiamen University, College of Energy, Xiang’an Campus (China)

    2017-03-15

    ZnO nanostructures were grown under different deposition conditions from Zn films pre-deposited onto Si substrates in O{sub 2}-Ar plasma, ignited in an advanced custom-designed plasma-enhanced horizontal tube furnace deposition system. The morphology and structure of the synthesized ZnO nanostructures were systematically and extensively investigated by scanning and transmission electron microscopy, Raman spectroscopy, and atomic force microscopy. It is shown that the morphology of ZnO nanostructures changes from the hybrid ZnO/nanoparticle and nanorod system to the mixture of ZnO nanosheets and nanorods when the growth temperature increases, and the density of ZnO nanorods increases with the increase of oxygen flow rate. The formation of ZnO nanostructures was explained in terms of motion of Zn atoms on the Zn nanoparticle surfaces, and to the local melting of Zn nanoparticles or nanosheets. Moreover, the photoluminescence properties of ZnO nanostructures were studied, and it was revealed that the photoluminescence spectrum features two strong ultraviolet bands at about 378 and 399 nm and a series of weak blue bands within a range of 440–484 nm, related to the emissions of free excitons, near-band edge, and defects of ZnO nanostructures. The obtained results enrich our knowledge on the synthesis of ZnO-based nanostructures and contribute to the development of ZnO-based optoelectronic devices.

  3. Catalyst-free growth and tailoring morphology of zinc oxide nanostructures by plasma-enhanced deposition at low temperature

    Science.gov (United States)

    Chen, W. Z.; Wang, B. B.; Qu, Y. Z.; Huang, X.; Ostrikov, K.; Levchenko, I.; Xu, S.; Cheng, Q. J.

    2017-03-01

    ZnO nanostructures were grown under different deposition conditions from Zn films pre-deposited onto Si substrates in O2-Ar plasma, ignited in an advanced custom-designed plasma-enhanced horizontal tube furnace deposition system. The morphology and structure of the synthesized ZnO nanostructures were systematically and extensively investigated by scanning and transmission electron microscopy, Raman spectroscopy, and atomic force microscopy. It is shown that the morphology of ZnO nanostructures changes from the hybrid ZnO/nanoparticle and nanorod system to the mixture of ZnO nanosheets and nanorods when the growth temperature increases, and the density of ZnO nanorods increases with the increase of oxygen flow rate. The formation of ZnO nanostructures was explained in terms of motion of Zn atoms on the Zn nanoparticle surfaces, and to the local melting of Zn nanoparticles or nanosheets. Moreover, the photoluminescence properties of ZnO nanostructures were studied, and it was revealed that the photoluminescence spectrum features two strong ultraviolet bands at about 378 and 399 nm and a series of weak blue bands within a range of 440-484 nm, related to the emissions of free excitons, near-band edge, and defects of ZnO nanostructures. The obtained results enrich our knowledge on the synthesis of ZnO-based nanostructures and contribute to the development of ZnO-based optoelectronic devices.

  4. Epitaxial growth of znO nanowires over the ZnO thin films deposited on the Si and sapphire substrates.

    Science.gov (United States)

    Park, No-Kuk; Lee, You Jin; Jung, Ji Young; Lee, Won Guen; Bae, Young Je; Yoon, Suk Hoon; Han, Gi Bo; Ryu, Si Ok; Lee, Tae Jin

    2008-09-01

    Epitaxial growth of ZnO nanowires was carried out using a modified thermal evaporation method with inexpensive experimental setup. ZnO nanowires were synthesized using ZnO thin films. The ZnO thin films were deposited as a buffer layer on silicon and sapphire using an impinging flow reactor (IFR). The IFR system is a modified version of a chemical bath deposition (CBD). Films can be created at low temperature, without any metallic catalysts. The properties of Zinc Oxide films are dependant upon the type of substrate used. The same deposition process with a different substrates yields two films with different properties. The most critical effect on growth of ZnO nanowires were dependent the properties of the buffer layer deposited on the substrate. It was not the type of substrate used. A cost-efficient method for epitaxial growth of single crystal ZnO nanowires is proposed in this work.

  5. Growth of InAs Quantum Dots on Germanium Substrate Using Metal Organic Chemical Vapor Deposition Technique

    Directory of Open Access Journals (Sweden)

    Tyagi Renu

    2009-01-01

    Full Text Available Abstract Self-assembled InAs quantum dots (QDs were grown on germanium substrates by metal organic chemical vapor deposition technique. Effects of growth temperature and InAs coverage on the size, density, and height of quantum dots were investigated. Growth temperature was varied from 400 to 450 °C and InAs coverage was varied between 1.40 and 2.35 monolayers (MLs. The surface morphology and structural characteristics of the quantum dots analyzed by atomic force microscope revealed that the density of the InAs quantum dots first increased and then decreased with the amount of InAs coverage; whereas density decreased with increase in growth temperature. It was observed that the size and height of InAs quantum dots increased with increase in both temperature and InAs coverage. The density of QDs was effectively controlled by growth temperature and InAs coverage on GaAs buffer layer.

  6. Layer-Controlled Chemical Vapor Deposition Growth of MoS2 Vertical Heterostructures via van der Waals Epitaxy.

    Science.gov (United States)

    Samad, Leith; Bladow, Sage M; Ding, Qi; Zhuo, Junqiao; Jacobberger, Robert M; Arnold, Michael S; Jin, Song

    2016-07-26

    The fascinating semiconducting and optical properties of monolayer and few-layer transition metal dichalcogenides, as exemplified by MoS2, have made them promising candidates for optoelectronic applications. Controllable growth of heterostructures based on these layered materials is critical for their successful device applications. Here, we report a direct low temperature chemical vapor deposition (CVD) synthesis of MoS2 monolayer/multilayer vertical heterostructures with layer-controlled growth on a variety of layered materials (SnS2, TaS2, and graphene) via van der Waals epitaxy. Through precise control of the partial pressures of the MoCl5 and elemental sulfur precursors, reaction temperatures, and careful tracking of the ambient humidity, we have successfully and reproducibly grown MoS2 vertical heterostructures from 1 to 6 layers over a large area. The monolayer MoS2 heterostructure was verified using cross-sectional high resolution transmission electron microscopy (HRTEM) while Raman and photoluminescence spectroscopy confirmed the layer-controlled MoS2 growth and heterostructure electronic interactions. Raman, photoluminescence, and energy dispersive X-ray spectroscopy (EDS) mappings verified the uniform coverage of the MoS2 layers. This reaction provides an ideal method for the scalable layer-controlled growth of transition metal dichalcogenide heterostructures via van der Waals epitaxy for a variety of optoelectronic applications.

  7. Mechanism of high growth rate for diamond-like carbon films synthesized by helicon wave plasma chemical vapor deposition

    Science.gov (United States)

    Peiyu, JI; Jun, YU; Tianyuan, HUANG; Chenggang, JIN; Yan, YANG; Lanjian, ZHUGE; Xuemei, WU

    2018-02-01

    A high growth rate fabrication of diamond-like carbon (DLC) films at room temperature was achieved by helicon wave plasma chemical vapor deposition (HWP-CVD) using Ar/CH4 gas mixtures. The microstructure and morphology of the films were characterized by Raman spectroscopy and scanning electron microscopy. The diagnosis of plasma excited by a helicon wave was measured by optical emission spectroscopy and a Langmuir probe. The mechanism of high growth rate fabrication for DLC films by HWP-CVD has been discussed. The growth rate of the DLC films reaches a maximum value of 54 μm h‑1 at the CH4 flow rate of 85 sccm, which is attributed to the higher plasma density during the helicon wave plasma discharge. The CH and H α radicals play an important role in the growth of DLC films. The results show that the H α radicals are beneficial to the formation and stabilization of C=C bond from sp2 to sp3.

  8. Growth characteristics and properties of indium oxide and indium-doped zinc oxide by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Donghyun; Nam, Taewook; Park, Jusang [School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-Gu, Seoul 120-749 (Korea, Republic of); Gatineau, Julien [Air Liquide Laboratories, 28 Wadai, Tsukuba 300-4247 (Japan); Kim, Hyungjun, E-mail: hyungjun@yonsei.ac.kr [School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-Gu, Seoul 120-749 (Korea, Republic of)

    2015-07-31

    We investigated the growth of indium oxide (In{sub 2}O{sub 3}) and indium-doped zinc oxide (In-doped ZnO, IZO) thin films synthesized using thermal atomic layer deposition with dimethylamino-dimethylindium as the precursor, while varying the In{sub 2}O{sub 3}/ZnO ratio. The IZO films were deposited using the supercycle method, and the doping concentration of these films was controlled by changing the In{sub 2}O{sub 3}/ZnO cycle ratio. The microstructural properties and chemical compositions of the films were analyzed using X-ray diffraction analysis and X-ray photoelectron spectroscopy. Further, the electrical properties of the IZO films, including their carrier concentration, mobility, and resistivity, were investigated through Hall measurements. The lowest resistivity (6.15 × 10{sup −2} Ω·cm) was exhibited by the IZO film. The highest carrier concentration and mobility exhibited by the IZO films grown at 300 °C were 4.4 × 10{sup 18} cm{sup −3} and 28.7 cm{sup 2}/V·s, respectively. - Highlights: • Indium oxide and In-doped ZnO (IZO) were deposited using thermal ALD with DMLDMIn. • In doped ZnO (IZO) was deposited using thermal ALD using supercycle method. • Properties of IZO were investigated as a function of doping concentration. • The lowest resistivity can be obtained at the maximum In solubility of ZnO.

  9. Imposed quasi-layer-by-layer homoepitaxial growth of SrTiO3 films by large area pulsed laser deposition

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Pryds, Nini

    2011-01-01

    The homoepitaxial growth of SrTiO3 (STO) films was investigated by a large-area pulsed laser deposition (PLD), which was in-situ monitored by a high pressure reflective high energy electron diffraction. By combining a conventionally continuous film deposition with a followed interval relaxation......, a persistent layer-by-layer (LBL) film growth of more than 100 unit cells STO films was achieved. This interrupted PLD technique could realize persistent LBL film growth at any laser frequency between 1 and 10 Hz and provides an effective way to fabricate high quality complex oxide films on unit cell scale....

  10. LOW-TEMPERATURE GRAPHENE GROWTH ON COPPER FOIL CATALYST BY CHEMICAL VAPOUR DEPOSITION (CVD METHOD

    Directory of Open Access Journals (Sweden)

    Kasman Kasman

    2016-08-01

    Full Text Available Graphene growth at low temperatures (below 500 oC on copper catalyst by CVD method was studied. The goal of this study is to determine a minimum growth temperature for growing graphene with high quality. In this study, the catalyst used for growing graphene was copper foil (Sigma-Aldrich, code: 1001328641, 25 µm in thickness, 99.98% trace metals basis, cut into 2x1 cm2 in size  annealed at 900 oC , while the precursor used was poly(methyl methacrylate (PMMA heated at 140 oC. In graphene growth, two different growth temperatures of 350 oC and 450 oC were varied. The graphene films grown on copper foil catalyst were characterised using SEM and Raman spectroscopy. While, the films transferred onto quartz/glass/grid substrates were characterised by using SEM, Raman spectroscopy, UV-vis spectroscopy, four point probe and TEM. Results of this study showed that the 450 oC-grown samples produce a better quality graphene film compared to the 350 oC-grown samples. In other words, the minimum temperature of graphene growth is at least 450 oC for a Cu foil, since this temperature has to be sufficiently high to activate carbon diffusion and rearrangement on the catalyst surface..

  11. Exploring the Potential use of Photo-Selective Nets for Fruit Growth Regulation in Apple Explorando el uso Potencial de Mallas Foto-Selectivas para la Regulación del Crecimiento de Fruto en Manzano

    Directory of Open Access Journals (Sweden)

    Richard M Bastías

    2012-06-01

    Full Text Available The effect of shading (i.e. reduction of sunlight availability on fruit growth physiology has been widely studied in apple (Malus domestica Borkh., but little knowledge exist about fruit growth responses to changes in the light spectrum. The aim of the present research was to study the effect of use of colored nets with differential sunlight transmission in the blue (B, 400-500 nm, red (R, 600-700 nm and far-red (FR, 700-800 nm spectra on apple fruit growth and physiological associated responses. Three year old 'Fuji' apple trees were covered with 40% photo-selective blue and red shade nets, 40% neutral grey shade net, and 20% neutral white net as control. Red and blue net reduced in the same proportion (27% the photosynthetically active radiation with respect to control. However, blue net increased by 30% and reduced by 10% the B:R and R:FR the light relations, respectively. Maximal fruit growth rate under blue and grey nets was 15-20% greater than control. Fruit weight under blue net was 17% greater than control, but no significant differences in fruit weight were found among red net and control. Leaf photosynthesis and total leaf area under blue net were 28% and 30% higher than control, respectively; with ensuing positive effect on tree net C assimilation rate and total dry matter production. Results suggest that shifting the B, R, and FR light composition with photo-selective nets could be a useful tool to manipulate the photosynthetic and morphogenetic process regulating the carbohydrate availability for apple fruit growth.El efecto del sombreado (i.e. reducción de la cantidad de luz solar sobre la fisiología de crecimiento de fruto ha sido ampliamente estudiado en manzano (Malus domestica Borkh., pero existe poco conocimiento sobre respuestas de crecimiento del fruto a cambios en el espectro de la luz. El objetivo de la presente investigación fue estudiar el efecto del uso de mallas de color con transmisión diferencial de la luz en el

  12. High Growth Rate Deposition of Hydrogenated Amorphous Silicon-Germanium Films and Devices Using ECR-PECVD

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Yong [Iowa State Univ., Ames, IA (United States)

    2002-01-01

    Hydrogenated amorphous silicon germanium films (a-SiGe:H) and devices have been extensively studied because of the tunable band gap for matching the solar spectrum and mature the fabrication techniques. a-SiGe:H thin film solar cells have great potential for commercial manufacture because of very low cost and adaptability to large-scale manufacturing. Although it has been demonstrated that a-SiGe:H thin films and devices with good quality can be produced successfully, some issues regarding growth chemistry have remained yet unexplored, such as the hydrogen and inert-gas dilution, bombardment effect, and chemical annealing, to name a few. The alloying of the SiGe introduces above an order-of-magnitude higher defect density, which degrades the performance of the a-SiGe:H thin film solar cells. This degradation becomes worse when high growth-rate deposition is required. Preferential attachment of hydrogen to silicon, clustering of Ge and Si, and columnar structure and buried dihydride radicals make the film intolerably bad. The work presented here uses the Electron-Cyclotron-Resonance Plasma-Enhanced Chemical Vapor Deposition (ECR-PECVD) technique to fabricate a-SiGe:H films and devices with high growth rates. Helium gas, together with a small amount of H2, was used as the plasma species. Thickness, optical band gap, conductivity, Urbach energy, mobility-lifetime product, I-V curve, and quantum efficiency were characterized during the process of pursuing good materials. The microstructure of the a-(Si,Ge):H material was probed by Fourier-Transform Infrared spectroscopy. They found that the advantages of using helium as the main plasma species are: (1) high growth rate--the energetic helium ions break the reactive gas more efficiently than hydrogen ions; (2) homogeneous growth--heavy helium ions impinging on the surface promote the surface mobility of the reactive radicals, so that heteroepitaxy growth as clustering of Ge and Si, columnar structure are

  13. Synthetic hierarchical nanostructures: growth of carbon nanofibers on microfibers by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Duan Huanan [Department of Mechanical Engineering, Worcester Polytechnic Institute, 100 Institute Rd., Worcester, MA 01609 (United States); Liang Jianyu, E-mail: jianyul@wpi.ed [Department of Mechanical Engineering, Worcester Polytechnic Institute, 100 Institute Rd., Worcester, MA 01609 (United States); Xia Zhenhai [Department of Mechanical Engineering, College of Engineering, University of Akron, Akron, OH 44325 (United States)

    2010-02-15

    In this paper the synthesis of three-dimensional hierarchical nanostructures by pyrolysis of acetylene to grow carbon nanofibers (CNFs) on carbon microfibers (CMFs) and glass microfibers (GMFs) is reported. The morphology and structure of the as-prepared CNFs were studied by scanning electron microscopy and high-resolution transmission electron microscopy. CNFs grown on both substrates typically exhibited two types of morphology: the coil-like CNFs with frequent change in orientation and the relatively straight and long CNFs with parallel graphene sheets. The ethanol pretreatment was effective at improving the yield and distribution of the as-grown CNFs on CMFs, but showed an adverse effect to the CNF growth on GMFs. The influence of different substrates and growth temperatures on CNF morphology and the possible growth mechanism for the observed microstructures was discussed.

  14. Directed growth of graphene nanomesh in purified argon via chemical vapor deposition

    Science.gov (United States)

    Sun, Haibin; Fu, Can; Shen, Xia; Yang, Wenchao; Guo, Pengfei; Lu, Yang; Luo, Yongsong; Yu, Benhai; Wang, Xiaoge; Wang, Chunlei; Xu, Junqi; Liu, Jiangfeng; Song, Fengqi; Wang, Guanghou; Wan, Jianguo

    2017-06-01

    Graphene nanomeshes (GNMs), new graphene nanostructures with tunable bandgaps, are potential building blocks for future electronic or photonic devices, and energy storage and conversion materials. In previous works, GNMs have been successfully prepared on Cu foils by the H2 etching effect. In this paper, we investigated the effect of Ar on the preparation of GNMs, and how the mean density and shape of them vary with growth time. In addition, scanning electron microscopy (SEM) and high resolution transmission electron microscopy (TEM) revealed the typical hexagonal structure of GNM. Atomic force microscopy (AFM) and x-ray photoelectron spectroscopy (XPS) indicated that large copper oxide nanoparticles produced by oxidization in purified Ar can play an essential catalytic role in preparing GNMs. Then, we exhibited the key reaction details for each growth process and proposed a growth mechanism of GNMs in purified Ar.

  15. Epitaxial growth of aligned AlGalnN nanowires by metal-organic chemical vapor deposition

    Science.gov (United States)

    Han, Jung; Su, Jie

    2008-08-05

    Highly ordered and aligned epitaxy of III-Nitride nanowires is demonstrated in this work. M-axis is identified as a preferential nanowire growth direction through a detailed study of GaN/AlN trunk/branch nanostructures by transmission electron microscopy. Crystallographic selectivity can be used to achieve spatial and orientational control of nanowire growth. Vertically aligned (Al)GaN nanowires are prepared on M-plane AlN substrates. Horizontally ordered nanowires, extending from the M-plane sidewalls of GaN hexagonal mesas or islands demonstrate new opportunities for self-aligned nanowire devices, interconnects, and networks.

  16. Growth of EuO films on Si using Pulsed Laser Deposition

    Science.gov (United States)

    Jain, Vivek S.; Rimal, Gaurab; Tang, Jinke

    Epitaxial monolayers of europium monoxide (EuO) deposited on silicon (Si) wafers are suited for spintronic applications such as adding spin filter tunneling and spin current to Si technology, and for probing phenomena like Anomalous Hall effect and Topological Hall effect. However, the innate chemical reactivity of europium (Eu) and Si prevents a direct synthesis of EuO by pulsed laser deposition technique, without significant contamination of the EuO/Si interface and degradation of the EuO thin film. Silicon oxides (SiO2-δ) on the surface of Si substrates, partial pressure of oxygen (O2) gas and water vapors in the vacuum chamber act as contaminants. Techniques like standard wet etching process, thermal annealing, and decomposition of SiO2-δ by the bombardment of metal ions, and their effectiveness is studied using the X-Ray diffraction (XRD) system. Our goal is one-process in situ integration of spin-functional magnetic oxides seamless on Si wafers. Also the mechanism for the ferromagnetic order in oxygen-deficient europium monoxide (EuO1-x) at temperatures higher than 69K (the Curie temperature of stoichiometric EuO) remains controversial. We have investigated the magnetization of EuO1-x thin films prepared via PLD as a function of (emu) vs (K) Wyoming EPSCoR.

  17. Role of molecular conformations in rubrene polycrystalline films growth from vacuum deposition at various substrate temperatures

    Science.gov (United States)

    Lin, Ku-Yen; Wang, Yan-Jun; Chen, Ko-Lun; Ho, Ching-Yuan; Yang, Chun-Chuen; Shen, Ji-Lin; Chiu, Kuan-Cheng

    2017-01-01

    We report on the optical and structural characterization of rubrene polycrystalline films fabricated from vacuum deposition with various substrate temperatures (Tsub). Depending on Tsub, the role of twisted and planar rubrene conformational isomers on the properties of rubrene films is focused. The temperature (T)-dependent inverse optical transmission (IOT) and photoluminescence (PL) spectra were performed on these rubrene films. The origins of these IOT and PL peaks are explained in terms of the features from twisted and planar rubrene molecules and of the band characteristics from rubrene molecular solid films. Here, two rarely reported weak-peaks at 2.431 and 2.605 eV were observed from IOT spectra, which are associated with planar rubrene. Besides, the T-dependence of optical bandgap deduced from IOT spectra is discussed with respect to Tsub. Together with IOT and PL spectra, for Tsub > 170 °C, the changes in surface morphology and unit cell volume were observed for the first time, and are attributed to the isomeric transformation from twisted to planar rubrenes during the deposition processes. Furthermore, a unified schematic diagram in terms of Frenkel exciton recombination is suggested to explain the origins of the dominant PL peaks performed on these rubrene films at 15 K.

  18. Catalyst design by cyclic deposition: Nanoparticle formation and growth of high-density nanotube forests

    Energy Technology Data Exchange (ETDEWEB)

    Esconjauregui, Santiago; Fouquet, Martin; Xie, Rongsie; Cartwright, Richard; Robertson, John [Engineering Department, University of Cambridge, CB2 1PZ Cambridge (United Kingdom); Newcomb, Simon B. [Glebe Scientific Ltd., Newport, County Tipperary (Ireland)

    2012-12-15

    The areal density of carbon nanotube forests can be increased up to the order of 10{sup 13} cm{sup -2} using cycles of deposition and annealing of ultra-thin metal films, followed by nanoparticle immobilization. Herein, we show how the density of the catalyst nanoparticles increases after each cycle by using cross-sectional transmission electron microscopy. The layers of metal catalyst - subsequently deposited after previous annealing - sit on the uncovered areas of the support and, after annealing, restructure into nanoparticles cumulatively increasing the catalyst density. These nanoparticles lead to close-packed, high-density nanotube forests with nanotube areal densities of {proportional_to}10{sup 13} cm{sup -2}. The height of these high-density forests shortens as the density of the catalyst nanoparticle increases, which is observed using several synthesis conditions. This high nanotube density is required for using carbon nanotubes as interconnects in integrated circuits and in thermal interface materials. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. Influence of the Hydrothermal Method Growth Parameters on the Zinc Oxide Nanowires Deposited on Several Substrates

    Directory of Open Access Journals (Sweden)

    Concepción Mejía-García

    2014-01-01

    Full Text Available We report the synthesis of ZnO nanowires grown on several substrates (PET, glass, and Si using a two-step process: (a preparation of the seed layer on the substrate by spin coating, from solutions of zinc acetate dihydrate and 1-propanol, and (b growth of the ZnO nanostructures by dipping the substrate in an equimolar solution of zinc nitrate hexahydrate and hexamethylenetetramine. Subsequently, films were thermally treated with a commercial microwave oven (350 and 700 W for 5, 20, and 35 min. The ZnO nanowires obtained were characterized structurally, morphologically, and optically using XRD, SEM, and UV-VIS transmission, respectively. XRD patterns spectra revealed the presence of Zn(OH2 on the films grown on glass and Si substrates. A preferential orientation along c-axis directions for films grown on PET substrate was observed. An analysis by SEM revealed that the growth of the ZnO nanowires on PET and glass is better than the growth on Si when the same growth parameters are used. On glass substrates, ZnO nanowires less than 50 nm in diameter and between 200 nm and 1200 nm in length were obtained. The ZnO nanowires band gap energy for the films grown on PET and glass was obtained from optical transmission spectra.

  20. Plasma deposition of thin film silicon at low substrate temperature and at high growth rate

    NARCIS (Netherlands)

    Verkerk, A.D.

    2009-01-01

    To expand the range of applications for thin film solar cells incorporating hydrogenated amorphous silicon (a-Si:H) and hydrogenated nanocrystalline silicon (nc-Si:H), the growth rate has to be increased 0.5 or less to several nm/s and the substrate temperature should be lowered to around 100 C. In

  1. The generation and detection of high flux atomic oxygen for physical vapor deposition thin film growth

    NARCIS (Netherlands)

    Ingle, N.J.C.; Hammond, R.H.; Beasley, M.R.; Blank, David H.A.

    1999-01-01

    The growth of many epitaxial thin-film oxides is significantly enhanced with the use of an oxidizing agent such as atomic oxygen, ozone, or NO2. We developed a flow-through microwave plasma source to generate large atomic oxygen fluxes while maintaining vacuum pressures of less that 1×10¿4 Torr.

  2. The effect of growth limits on the loan/deposit ratio

    Directory of Open Access Journals (Sweden)

    A. NICCOLI

    2013-12-01

    Full Text Available A brief note on Marullo Reedtz’ The effects of “growth limits” on the banking system and on the distribution of credit, in which the author clarifies some points of disagreement that exist at the theoretical level and cites some empirical evidence to support them.

  3. A validated model of GAG deposition, cell distribution, and growth of tissue engineered cartilage cultured in a rotating bioreactor.

    Science.gov (United States)

    Nikolaev, N I; Obradovic, B; Versteeg, H K; Lemon, G; Williams, D J

    2010-03-01

    In this work a new phenomenological model of growth of cartilage tissue cultured in a rotating bioreactor is developed. It represents an advancement of a previously derived model of deposition of glycosaminoglycan (GAG) in engineered cartilage by (i) introduction of physiological mechanisms of proteoglycan accumulation in the extracellular matrix (ECM) as well as by correlating (ii) local cell densities and (iii) tissue growth to the ECM composition. In particular, previously established predictions and correlations of local oxygen concentrations and GAG synthesis rates are extended to distinguish cell secreted proteoglycan monomers free to diffuse in cell surroundings and outside from the engineered construct, from large aggrecan molecules, which are constrained within the ECM and practically immovable. The model includes kinetics of aggregation, that is, transformation of mobile GAG species into immobile aggregates as well as maintenance of the normal ECM composition after the physiological GAG concentration is reached by incorporation of a product inhibition term. The model also includes mechanisms of the temporal evolution of cell density distributions and tissue growth under in vitro conditions. After a short initial proliferation phase the total cell number in the construct remains constant, but the local cell distribution is leveled out by GAG accumulation and repulsion due to negative molecular charges. Furthermore, strong repulsive forces result in expansion of the local tissue elements observed macroscopically as tissue growth (i.e., construct enlargement). The model is validated by comparison with experimental data of (i) GAG distribution and leakage, (ii) spatial-temporal distributions of cells, and (iii) tissue growth reported in previous works. Validation of the model predictive capability--against a selection of measured data that were not used to construct the model--suggests that the model successfully describes the interplay of several

  4. Growth and characterization of organic layers deposited on porous-patterned Si surface

    Directory of Open Access Journals (Sweden)

    Gorbach Tamara Ya.

    2017-01-01

    Full Text Available The organic layers with the thickness from a few nanometers up to few micrometers have been deposited from the chemical solution at room temperature on porous patterned Si surfaces using two medical solutions: thiamine diphosphide (pH=1÷2 and metamizole sodium (pH=6÷7. Based on evolution of morphology, structural and compositional features obtained by scanning electron microscopy, X-ray analysis, reflectance high energy electron diffraction the grown mechanisms in thin organic layers are discussed in the terms of terrace-step-kink model whereas self-organized assemblies evaluated more thick layers. Transport mechanism features and possible photovoltaic properties are discussed on the base of differential current-voltage characteristics.

  5. Growth of epitaxial Pb(Zr,Ti)O3 films by pulsed laser deposition

    Science.gov (United States)

    Lee, J.; Safari, A.; Pfeffer, R. L.

    1992-10-01

    Lead zirconate titanate (PZT) thin films with a composition near the morphotropic phase boundary have been grown on MgO (100) and Y1Ba2Cu3Ox (YBCO) coated MgO substrates. Substrate temperature and oxygen pressure were varied to achieve ferroelectric films with a perovskite structure. Films grown on MgO had the perovskite structure with an epitaxial relationship with the MgO substrate. On the other hand, films grown on the YBCO/MgO substrate had an oriented structure to the surface normal with a misorientation in the plane parallel to the surface. The measured dielectric constant and loss tangent at 1 kHz were 670 and 0.05, respectively. The remnant polarization and coercive field were 42 μC/cm2 and 53 kV/cm. A large internal bias field (12 kV/cm) was observed in the as-deposited state of the undoped PZT films.

  6. Microwave plasma-enhanced chemical vapour deposition growth of carbon nanostructures

    Directory of Open Access Journals (Sweden)

    Shivan R. Singh

    2010-05-01

    Full Text Available The effect of various input parameters on the production of carbon nanostructures using a simple microwave plasma-enhanced chemical vapour deposition technique has been investigated. The technique utilises a conventional microwave oven as the microwave energy source. The developed apparatus is inexpensive and easy to install and is suitable for use as a carbon nanostructure source for potential laboratory-based research of the bulk properties of carbon nanostructures. A result of this investigation is the reproducibility of specific nanostructures with the variation of input parameters, such as carbon-containing precursor and support gas flow rate. It was shown that the yield and quality of the carbon products is directly controlled by input parameters. Transmission electron microscopy and scanning electron microscopy were used to analyse the carbon products; these were found to be amorphous, nanotubes and onion-like nanostructures.

  7. Growth and characterization of organic layers deposited on porous-patterned Si surface

    Science.gov (United States)

    Gorbach, Tamara Ya.; Smertenko, Petro S.; Olkhovik, G. P.; Wisz, Grzegorz

    2017-01-01

    The organic layers with the thickness from a few nanometers up to few micrometers have been deposited from the chemical solution at room temperature on porous patterned Si surfaces using two medical solutions: thiamine diphosphide (pH=1÷2) and metamizole sodium (pH=6÷7). Based on evolution of morphology, structural and compositional features obtained by scanning electron microscopy, X-ray analysis, reflectance high energy electron diffraction the grown mechanisms in thin organic layers are discussed in the terms of terrace-step-kink model whereas self-organized assemblies evaluated more thick layers. Transport mechanism features and possible photovoltaic properties are discussed on the base of differential current-voltage characteristics.

  8. ANALISIS PENGARUH CAPITAL ADEQUACY RATIO (CAR, LOAN TO DEPOSIT RATIO (LDR DAN NET INTEREST MARGIN (NIM TERHADAP RETURN ON ASSET (ROA (studi Kasus Pada PT Bank Mandiri (Persero Tbk Periode 2008-2012

    Directory of Open Access Journals (Sweden)

    Irmawati Irmawati

    2015-06-01

    Full Text Available This study aims to determine the impact of the Capital Adequacy Ratio ( CAR , Loan to Deposit Ratio ( LDR and Net Interest Margin ( NIM of the Return on Assets ( ROA at PT . Bank Mandiri ( Persero Tbk . The data used in this study comes from the banks concerned . The data taken in the form of secondary data obtained through the banking statistics quarterly financial report of PT . Bank Mandiri ( Persero Tbk in Indonesia during 2008-2012. The analytical method used consists of multiple regression analysis , the classical assumption , hypothesis testing ( t test and F test and test the coefficient of determination . From the results of this study concluded that based on regression analysis obtained the following equation : Y = 6.342 + 0.008 + 0.044 XI X2 - 1.176 X3 . In the classical assumption test found a problem in the autocorrelation test , whereas the normality test, multicollinearity and heteroscedasticity test there is a problem in the model .  Based on the hypothesis testing , the F test is known that jointly ( simultaneously variable CAR , NIM and LDR significant effect on ROA . While the t test ( partial testing , variable CAR and NIM has no effect on ROA . While variable LDR dominant and significant positive effect on ROA

  9. Atomic layer deposition on polymer based flexible packaging materials: Growth characteristics and diffusion barrier properties

    Energy Technology Data Exchange (ETDEWEB)

    Kaeaeriaeinen, Tommi O., E-mail: tommi.kaariainen@lut.f [ASTRaL, Lappeenranta University of Technology, Prikaatinkatu 3 E, 50100 Mikkeli (Finland); Maydannik, Philipp, E-mail: philipp.maydannik@lut.f [ASTRaL, Lappeenranta University of Technology, Prikaatinkatu 3 E, 50100 Mikkeli (Finland); Cameron, David C., E-mail: david.cameron@lut.f [ASTRaL, Lappeenranta University of Technology, Prikaatinkatu 3 E, 50100 Mikkeli (Finland); Lahtinen, Kimmo, E-mail: kimmo.lahtinen@tut.f [Tampere University of Technology, Paper Converting and Packaging Technology, P.O. Box 541, 33101 Tampere (Finland); Johansson, Petri, E-mail: petri.johansson@tut.f [Tampere University of Technology, Paper Converting and Packaging Technology, P.O. Box 541, 33101 Tampere (Finland); Kuusipalo, Jurkka, E-mail: jurkka.kuusipalo@tut.f [Tampere University of Technology, Paper Converting and Packaging Technology, P.O. Box 541, 33101 Tampere (Finland)

    2011-03-01

    One of the most promising areas for the industrial application of atomic layer deposition (ALD) is for gas barrier layers on polymers. In this work, a packaging material system with improved diffusion barrier properties has been developed and studied by applying ALD on flexible polymer based packaging materials. Nanometer scale metal oxide films have been applied to polymer-coated papers and their diffusion barrier properties have been studied by means of water vapor and oxygen transmission rates. The materials for the study were constructed in two stages: the paper was firstly extrusion coated with polymer film, which was then followed by the ALD deposition of oxide layer. The polymers used as extrusion coatings were polypropylene, low and high density polyethylene, polylactide and polyethylene terephthalate. Water vapor transmission rates (WVTRs) were measured according to method SCAN-P 22:68 and oxygen transmission rates (O{sub 2}TRs) according to a standard ASTM D 3985. According to the results a 10 nm oxide layer already decreased the oxygen transmission by a factor of 10 compared to uncoated material. WVTR with 40 nm ALD layer was better than the level currently required for most common dry flexible packaging applications. When the oxide layer thickness was increased to 100 nm and above, the measured WVTRs were limited by the measurement set up. Using an ALD layer allowed the polymer thickness on flexible packaging materials to be reduced. Once the ALD layer was 40 nm thick, WVTRs and O{sub 2}TRs were no longer dependent on polymer layer thickness. Thus, nanometer scale ALD oxide layers have shown their feasibility as high quality diffusion barriers on flexible packaging materials.

  10. Evaluation of Alternative Atomistic Models for the Incipient Growth of ZnO by Atomic Layer Deposition

    Science.gov (United States)

    Chu, Manh-Hung; Tian, Liang; Chaker, Ahmad; Skopin, Evgenii; Cantelli, Valentina; Ouled, Toufik; Boichot, Raphaël; Crisci, Alexandre; Lay, Sabine; Richard, Marie-Ingrid; Thomas, Olivier; Deschanvres, Jean-Luc; Renevier, Hubert; Fong, Dillon; Ciatto, Gianluca

    2017-06-01

    ZnO thin films are interesting for applications in several technological fields, including optoelectronics and renewable energies. Nanodevice applications require controlled synthesis of ZnO structures at nanometer scale, which can be achieved via atomic layer deposition (ALD). However, the mechanisms governing the initial stages of ALD had not been addressed until very recently. Investigations into the initial nucleation and growth as well as the atomic structure of the heterointerface are crucial to optimize the ALD process and understand the structure-property relationships for ZnO. We have used a complementary suite of in situ synchrotron x-ray techniques to investigate both the structural and chemical evolution during ZnO growth by ALD on two different substrates, i.e., SiO2 and Al2O3, which led us to formulate an atomistic model of the incipient growth of ZnO. The model relies on the formation of nanoscale islands of different size and aspect ratio and consequent disorder induced in the Zn neighbors' distribution. However, endorsement of our model requires testing and discussion of possible alternative models which could account for the experimental results. In this work, we review, test, and rule out several alternative models; the results confirm our view of the atomistic mechanisms at play, which influence the overall microstructure and resulting properties of the final thin film.

  11. Evaluation of Alternative Atomistic Models for the Incipient Growth of ZnO by Atomic Layer Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Chu, Manh-Hung; Tian, Liang; Chaker, Ahmad; Skopin, Evgenii; Cantelli, Valentina; Ouled, Toufik; Boichot, Raphaël; Crisci, Alexandre; Lay, Sabine; Richard, Marie-Ingrid; Thomas, Olivier; Deschanvres, Jean-Luc; Renevier, Hubert; Fong, Dillon; Ciatto, Gianluca

    2017-03-20

    ZnO thin films are interesting for applications in several technological fields, including optoelectronics and renewable energies. Nanodevice applications require controlled synthesis of ZnO structures at nanometer scale, which can be achieved via atomic layer deposition (ALD). However, the mechanisms governing the initial stages of ALD had not been addressed until very recently. Investigations into the initial nucleation and growth as well as the atomic structure of the heterointerface are crucial to optimize the ALD process and understand the structure-property relationships for ZnO. We have used a complementary suite of in situ synchrotron x-ray techniques to investigate both the structural and chemical evolution during ZnO growth by ALD on two different substrates, i.e., SiO2 and Al2O3, which led us to formulate an atomistic model of the incipient growth of ZnO. The model relies on the formation of nanoscale islands of different size and aspect ratio and consequent disorder induced in the Zn neighbors' distribution. However, endorsement of our model requires testing and discussion of possible alternative models which could account for the experimental results. In this work, we review, test, and rule out several alternative models; the results confirm our view of the atomistic mechanisms at play, which influence the overall microstructure and resulting properties of the final thin film.

  12. Porphyrins as Templates for Site-Selective Atomic Layer Deposition: Vapor Metalation and in Situ Monitoring of Island Growth

    Energy Technology Data Exchange (ETDEWEB)

    Avila, Jason R.; Emery, Jonathan D.; Pellin, Michael J.; Martinson, Alex B. F.; Farha, Omar K.; Hupp, Joseph T.

    2016-08-10

    Examinations of enzymatic catalysts suggest one key to efficient catalytic activity is discrete size metallo clusters. Mimicking enzymatic cluster systems is synthetically challenging because conventional solution methods are prone to aggregation or require capping of the cluster, thereby limiting its catalytic activity. We introduce site-selective atomic layer deposition (ALD) on porphyrins as an alternative approach to grow isolated metal oxide islands that are spatially separated. Surface-bound tetra-acid free base porphyrins (H2TCPP) may be metalated with Mn using conventional ALD precursor exposure to induce homogeneous hydroxide synthetic handles which acts as a nucleation point for subsequent ALD MnO island growth. Analytical fitting of in situ QCM mass uptake reveals island growth to be hemispherical with a convergence radius of 1.74 nm. This growth mode is confirmed with synchrotron grazing-incidence small-angle X-ray scattering (GISAXS) measurements. Finally, we extend this approach to other ALD chemistries to demonstrate the generality of this route to discrete metallo island materials.

  13. Improved interface growth and enhanced flux pinning in YBCO films deposited on an advanced IBAD-MgO based template

    Science.gov (United States)

    Khan, M. Z.; Zhao, Y.; Wu, X.; Malmivirta, M.; Huhtinen, H.; Paturi, P.

    2018-02-01

    The growth mechanism is studied from the flux pinning point of view in small-scale YBa2Cu3O6+x (YBCO) thin films deposited on a polycrystalline hastelloy with advanced IBAD-MgO based buffer layer architecture. When compared the situation with YBCO films grown on single crystal substrates, the most critical issues that affect the suitable defect formation and thus the optimal vortex pinning landscape, have been studied as a function of the growth temperature and the film thickness evolution. We can conclude that the best critical current property in a wide applied magnetic field range is observed in films grown at relatively low temperature and having intermediate thickness. These phenomena are linked to the combination of the improved interface growth, to the film thickness related crystalline relaxation and to the formation of linear array of edge dislocations that forms the low-angle grain boundaries through the entire film thickness and thus improve the vortex pinning properties. Hence, the optimized buffer layer structure proved to be particularly suitable for new coated conductor solutions.

  14. Polarity-Dependent Growth Rates of Selective Area Grown ZnO Nanorods by Chemical Bath Deposition.

    Science.gov (United States)

    Cossuet, Thomas; Appert, Estelle; Thomassin, Jean-Luc; Consonni, Vincent

    2017-06-27

    Polarity is known to affect the growth and properties of ZnO single crystals and epitaxial films, but its effects are mostly unknown in ZnO nanorods. To leave polarity as the only varying parameter, ZnO nanorods are grown by chemical bath deposition under identical conditions and during the same run on O- and Zn-polar ZnO single crystals patterned by electron beam lithography with the same pattern consisting of 15 different domains. The resulting well-ordered O- and Zn-polar ZnO nanorod arrays with high structural uniformity are formed on all the domains. The comparison of their typical dimensions unambiguously reveals that Zn-polar ZnO nanorods have much higher growth rates than O-polar ZnO nanorods for all the hole diameter and period combinations. The distinct growth rates are explained in the framework of the surface reaction-/diffusive transport-limited elongation regime analysis, which yields a much larger surface reaction rate constant for Zn-polar ZnO nanorods. The origin of the difference is attributed to polarity-dependent dangling bond configurations at the top polar c-faces of ZnO nanorods, which may further be affected by polarity-dependent interactions with the ionic species in aqueous solution. These findings show the relevance of considering polarity as an important quantity in ZnO nanorods.

  15. Low-temperature chemical vapor deposition growth of graphene from toluene on electropolished copper foils.

    Science.gov (United States)

    Zhang, Bin; Lee, Wi Hyoung; Piner, Richard; Kholmanov, Iskandar; Wu, Yaping; Li, Huifeng; Ji, Hengxing; Ruoff, Rodney S

    2012-03-27

    A two-step CVD route with toluene as the carbon precursor was used to grow continuous large-area monolayer graphene films on a very flat, electropolished Cu foil surface at 600 °C, lower than any temperature reported to date for growing continuous monolayer graphene. Graphene coverage is higher on the surface of electropolished Cu foil than that on the unelectropolished one under the same growth conditions. The measured hole and electron mobilities of the monolayer graphene grown at 600 °C were 811 and 190 cm(2)/(V·s), respectively, and the shift of the Dirac point was 18 V. The asymmetry in carrier mobilities can be attributed to extrinsic doping during the growth or transfer. The optical transmittance of graphene at 550 nm was 97.33%, confirming it was a monolayer, and the sheet resistance was ~8.02 × 10(3) Ω/□. © 2012 American Chemical Society

  16. Growth of Boron-Rich Nanowires by Chemical Vapor Deposition (CVD

    Directory of Open Access Journals (Sweden)

    H. J. Kleebe

    2006-11-01

    Full Text Available B-rich nanowires are grown on Ni coated oxidized Si(111 substrate using diborane as the gas precursor in a CVD process at 20 torr and 900C∘. These nanowires have diameters around 20–100 nanometers and lengths up to microns. Icosahedron B12 is shown to be the basic building unit forming the amorphous B-rich nanowires as characterized by EDAX, XRD, XPS, and Raman spectroscopies. The gas chemistry at low [B2H6]/ [N2] ratio is monitored by the in situ mass spectroscopy, which identified N2 as an inert carrier gas leading to formation of the B-rich compounds. A nucleation controlled growth mechanism is proposed to explain the rugged nanowire growth of boron. The role of the Ni catalyst in the synthesis of the B-rich nanostructures is also discussed.

  17. Pulsed laser deposition growth of FeSb2 films for thermoelectric applications

    DEFF Research Database (Denmark)

    Sun, Ye; Canulescu, Stela; Sun, Peijie

    2011-01-01

    were produced at 425 °C with an Ar pressure of 1.5–2 Pa. Thermal transport and Hall measurements were performed to explore the thermoelectric transport properties of the FeSb2 films. A maximum thermopower of 120 μVK−1 at 40 K was obtained. In general it is highly important to understand the growth...... properties of FeSb2 films if they are to eventually reach thermoelectric applications at cryogenic temperatures....

  18. Influence of homo-buffer layers and post-deposition rapid thermal annealing upon atomic layer deposition grown ZnO at 100 °C with three-pulsed precursors per growth cycle

    Science.gov (United States)

    Cheng, Yung-Chen; Yuan, Kai-Yun; Chen, Miin-Jang

    2017-10-01

    ZnO main epilayers are deposited with three-pulsed precursors in every growth cycle at 100 °C on various thicknesses of 300 °C-grown homo-buffer layers by atomic layer deposition (ALD) on sapphire substrate. Samples are treated without and with post-deposition rapid thermal annealing (RTA). Two different annealing temperatures 300 and 1000 °C are utilized in the ambience of oxygen for 5 min. Extremely low background electron concentration 8.4 × 1014 cm-3, high electron mobility 62.1 cm2/V s, and pronounced enhancement of near bandgap edge photoluminescence (PL) are achieved for ZnO main epilayer with sufficient thickness of buffer layer (200 ALD cycles) and post-deposition RTA at 1000 °C. Effective block and remove of thermally unstable mobile defects and other crystal lattice imperfections are the agents of quality promotion of ZnO thin film.

  19. Nucleation and growth of MgO atomic layer deposition: A real-time spectroscopic ellipsometry study

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Han; Fu, Kan [Department of Materials Science and Engineering, University of Connecticut, Storrs, Connecticut 06269. (United States)

    2013-11-15

    The atomic layer deposition (ALD) of MgO thin films from bis(cyclopentadienyl) magnesium and H{sub 2}O was studied using in-situ real-time spectroscopic ellipsometry (SE), ex-situ x-ray photoelectron spectroscopy, and grazing-incidence x-ray diffraction. It is found that the initial growth is not linear during the first ten cycles, and magnesium silicate forms spontaneously on the SiO{sub 2}/Si substrates at 250 °C. Submonolayer sensitivity of SE is demonstrated by the analysis of each half-cycle and self-limiting adsorption, revealing characteristic features of hetero- and homo-MgO ALD processes.

  20. Growth and Characterisation of Pulsed-Laser Deposited Tin Thin Films on Cube-Textured Copper at Different Temperatures

    Directory of Open Access Journals (Sweden)

    Szwachta G.

    2016-06-01

    Full Text Available High-quality titanium nitride thin films have been grown on a cube-textured copper surface via pulsed laser deposition. The growth of TiN thin films has been very sensitive to pre-treatment procedure and substrate temperature. It is difficult to grow heteroexpitaxial TiN films directly on copper tape due to large differences in lattice constants, thermal expansion coefficients of the two materials as well as polycrystalline structure of substrate. The X-Ray diffraction measurement revealed presence of high peaks belonged to TiN(200 and TiN(111 thin films, depending on used etcher of copper surface. The electron diffraction patterns of TiN(200/Cu films confirmed the single-crystal nature of the films with cube-on-cube epitaxy. The high-resolution microscopy on our films revealed sharp interfaces between copper and titanium nitride with no presence of interfacial reaction.

  1. Spiral Deposition with Alternating Indium Composition in Growing an InGaN Nanoneedle with the Vapor-Liquid-Solid Growth Mode

    Directory of Open Access Journals (Sweden)

    Wen-Ming Chang

    2012-01-01

    Full Text Available The spiral deposition of InGaN with a quasiperiodical distribution of indium content along the growth direction for forming InGaN nanoneedles (NNs with the vapor-liquid-solid (VLS growth mode is demonstrated. The VLS growth is implemented by using Au nanoparticles (NPs as the catalyst in metalorganic chemical vapor deposition. The Au NPs on a GaN template are generated through pulsed laser irradiation. The observation of spiral deposition is based on the analyses of the scanning results in the high angle annular dark field and energy dispersive X-ray measurements of transmission electron microscopy. In the measurements, the composition variations along and perpendicular to the growth direction (the c-axis are illustrated. The alternating indium content along the growth direction is attributed to a quasiperiodically pulsed behavior of indium supersaturation process in the melted Au NP at the top of an InGaN NN. The spiral deposition of InGaN is due to the formation of an NN at the location of an Au NP with a screw-type dislocation beneath in the GaN template, at which the growth of a quasi-one-dimensional structure can be easily initiated.

  2. In situ Raman characterization of a diamond film during its growth process in a plasma jet chemical vapor deposition reactor

    Science.gov (United States)

    Rosman, N.; Abello, L.; Chabert, J. P.; Verven, G.; Lucazeau, G.

    1995-07-01

    A setup designed for characterization of a diamond film during its growth in a dc plasma jet chemical vapor deposition reactor is described. It is composed of a pulsed laser and the detector is gated in order to synchronize the Raman detection with the laser pulses. The optical components are designed for working in the visible and near UV. The installation is specially designed for remote detection and can be used in industrial reactors as well as in laboratory experiments. The detectivity of the setup is analyzed through some typical diamond spectra and it is shown that it is of the same order as that of a micro-Raman multichannel spectrometer. Some results are reported on how the temperature and the quality of the film can be controlled during the deposition process or during its etching by H2 reactive plasma. These results are discussed and confirmed by ex situ measurements including Raman, infrared, and scanning electron micrographs obtained on the same samples or in the same conditions as for in situ experiments. The secondary nucleation is responsible for the loss of Raman intensity and it could have some cyclic character.

  3. Controlled growth of MoS2 nanopetals on the silicon nanowire array using the chemical vapor deposition method

    Science.gov (United States)

    Chen, Shang-Min; Lin, Yow-Jon

    2018-01-01

    In order to get a physical/chemical insight into the formation of nanoscale semiconductor heterojunctions, MoS2 flakes are deposited on the silicon nanowire (SiNW) array by chemical vapor deposition (CVD). In this study, H2O2 treatment provides a favorable place where the formation of Sisbnd O bonds on the SiNW surfaces that play important roles (i.e., the nucleation centers, catalyst control centers or ;seeds;) can dominate the growth of MoS2 on the SiNWs. Using this configuration, the effect of a change in the S/MoO3 mass ratio (MS/MMoO3) on the surface morphology of MoS2 is studied. It is shown that an increase in the value of MS/MMoO3 leads to the increased nucleation rate, increasing the size of MoS2 nanopetals. This study provides valuable scientific information for directly CVD-grown edge-oriented MoS2/SiNWs heterojunctions for various nanoscale applications, including hydrogen evolution reaction and electronic and optoelectronic devices.

  4. Crystal Growth and Dissolution of Methylammonium Lead Iodide Perovskite in Sequential Deposition: Correlation between Morphology Evolution and Photovoltaic Performance.

    Science.gov (United States)

    Hsieh, Tsung-Yu; Huang, Chi-Kai; Su, Tzu-Sen; Hong, Cheng-You; Wei, Tzu-Chien

    2017-03-15

    Crystal morphology and structure are important for improving the organic-inorganic lead halide perovskite semiconductor property in optoelectronic, electronic, and photovoltaic devices. In particular, crystal growth and dissolution are two major phenomena in determining the morphology of methylammonium lead iodide perovskite in the sequential deposition method for fabricating a perovskite solar cell. In this report, the effect of immersion time in the second step, i.e., methlyammonium iodide immersion in the morphological, structural, optical, and photovoltaic evolution, is extensively investigated. Supported by experimental evidence, a five-staged, time-dependent evolution of the morphology of methylammonium lead iodide perovskite crystals is established and is well connected to the photovoltaic performance. This result is beneficial for engineering optimal time for methylammonium iodide immersion and converging the solar cell performance in the sequential deposition route. Meanwhile, our result suggests that large, well-faceted methylammonium lead iodide perovskite single crystal may be incubated by solution process. This offers a low cost route for synthesizing perovskite single crystal.

  5. Comparison of different forms of dietary selenium supplementation on growth performance, meat quality, selenium deposition, and antioxidant property in broilers.

    Science.gov (United States)

    Wang, Yongxia; Zhan, Xiuan; Zhang, Xiwen; Wu, Rujuan; Yuan, Dong

    2011-10-01

    This study was conducted to investigate the effects of different sources of dietary selenium (Se) supplementation on growth performance, meat quality, Se deposition, and antioxidant property in broilers. A total of 600 one-day-old Ross 308 broilers with an average body weight (BW) of 44.30 ± 0.49 g were randomly allotted to three treatments, each of which included five replicates of 40 birds. These three groups received the same basal diet containing 0.04 mg Se/kg, supplemented with 0.15 mg Se/kg from sodium selenite (SS) or from L-selenomethionine (L-Se-methionine (Met)) or from D-selenomethionine (D-Se-Met). The experiment lasted 42 days. Both Se source and time significantly influenced (p antioxidant status was greatly improved in broilers of L-Se-Met-treated group in comparison with the SS-treated group and was illuminated by the increased glutathione (GSH) concentration in serum, liver, and breast muscle (p antioxidant capability (T-AOC) in kidney, pancreas, and breast muscle (p antioxidant capability and Se deposition in serum and tissues and reduce drip loss of breast muscle in broilers compared with SS. Besides, L-Se-Met is more effective than D-Se-Met in improving antioxidant status in broilers.

  6. Growth mechanism of Al2O3 film on an organic layer in plasma-enhanced atomic layer deposition

    Science.gov (United States)

    Lee, J. Y.; Kim, D. W.; Kang, W. S.; Lee, J. O.; Hur, M.; Han, S. H.

    2018-01-01

    Differences in the physical and chemical properties of Al2O3 films on a Si wafer and a C x H y layer were investigated in the case of plasma-enhanced atomic layer deposition. The Al2O3 film on the Si had a sharper interface and lower thickness than the Al2O3 film on the C x H y . The amount of carbon-impurity near the interface was larger for Al2O3 on the C x H y than for Al2O3 on the Si. In order to understand these differences, the concentrations of Al, O, C, and Si atoms through the Al2O3 films were evaluated by using x-ray photoelectron spectroscopy (XPS) depth profiling. The emission intensities of CO molecule were analyzed for different numbers of deposition cycles, by using time-resolved optical emission spectroscopy (OES). Finally, a growth mechanism for Al2O3 on an organic layer was proposed, based on the XPS and OES results for the Si wafer and the C x H y layer.

  7. Electroless selective deposition of gold nano-array for silicon nanowires growth

    Directory of Open Access Journals (Sweden)

    Ruiz-Gomes E.

    2014-01-01

    Full Text Available Nanopatterns of gold clusters on a large surface of oriented Si(111 substrates, from the galvanic displacement of gold salt (via the spontaneous reduction of AuCl4 -, are demonstrated in this work. The Si substrate is patterned by Focused Ion Beam (FIB prior to being dipped in a gold solution. Here, we show that these patterns lead to successful control of the position and size of gold clusters. Sequential patterning reveals a powerful maskless alternative to surface preparation prior to Si nanowire growth

  8. Water-assisted growth of graphene on carbon nanotubes by the chemical vapor deposition method.

    Science.gov (United States)

    Feng, Jian-Min; Dai, Ye-Jing

    2013-05-21

    Combining carbon nanotubes (CNTs) with graphene has been proved to be a feasible method for improving the performance of graphene for some practical applications. This paper reports a water-assisted route to grow graphene on CNTs from ferrocene and thiophene dissolved in ethanol by the chemical vapor deposition method in an argon flow. A double injection technique was used to separately inject ethanol solution and water for the preparation of graphene/CNTs. First, CNTs were prepared from ethanol solution and water. The injection of ethanol solution was suspended and water alone was injected into the reactor to etch the CNTs. Thereafter, ethanol solution was injected along with water, which is the key factor in obtaining graphene/CNTs. Transmission electron microscopy, scanning electron microscopy, X-ray diffraction, and Raman scattering analyses confirmed that the products were the hybrid materials of graphene/CNTs. X-ray photo-electron spectroscopy analysis showed the presence of oxygen rich functional groups on the surface of the graphene/CNTs. Given the activity of the graphene/CNT surface, CdS quantum dots adhered onto it uniformly through simple mechanical mixing.

  9. Mesoscopic Modeling of Thrombus Formation and Growth: Platelet Deposition in Complex Geometries

    Science.gov (United States)

    Yazdani, Alireza; Karniadakis, George

    2014-11-01

    Haemodynamics and blood rheology are important contributing factors to thrombus formation at a vulnerable vessel wall, and adhesion of platelets to a vascular surface, particularly in regions of flow stagnation, recirculation and reattachment is significantly important in formation of thrombi. For example, haemodynamic micro-environment can have effects on thrombosis inside the atherosclerotic plaques and aneurysms. To study these effects, we have developed and validated a model for platelet aggregation in blood flow using Dissipative Particle Dynamics (DPD) method. In this model platelets are considered as single DPD particles interacting with each other via Morse potential once activated. We assign an activation delay time to each platelet such that they remain passive during that time. We investigate the effect of different geometries on platelet aggregation by considering arterial stenosis at different levels of occlusion, and aneurysms of different shapes and sizes. The results show a marked increase in platelet aggregation within the boundaries of deceleration zone by increasing the degree of stenosis. Further, we observe enhanced platelet margination and wall deposition in the presence of red blood cells.

  10. In-situ atomic layer deposition growth of Hf-oxide

    Energy Technology Data Exchange (ETDEWEB)

    Karavaev, Konstantin

    2010-06-17

    We have grown HfO{sub 2} on Si(001) by atomic layer deposition (ALD) using HfCl{sub 4}, TEMAHf, TDMAHf and H{sub 2}O as precursors. The early stages of the ALD were investigated with high-resolution photoelectron spectroscopy and X-ray absorption spectroscopy. We observed the changes occurring in the Si 2p, O 1s, Hf 4f, Hf 4d, and Cl 2p (for HfCl{sub 4} experiment) core level lines after each ALD cycle up to the complete formation of two layers of HfO{sub 2}. The investigation was carried out in situ giving the possibility to determine the properties of the grown film after every ALD cycle or even after a half cycle. This work focused on the advantages in-situ approach in comparison with ex-situ experiments. The study provides to follow the evolution of the important properties of HfO{sub 2}: contamination level, density and stoichiometry, and influence of the experimental parameters to the interface layer formation during ALD. Our investigation shows that in-situ XPS approach for ALD gives much more information than ex-situ experiments. (orig.)

  11. Selective Chemical Vapor Deposition Growth of Cubic FeGe Nanowires That Support Stabilized Magnetic Skyrmions.

    Science.gov (United States)

    Stolt, Matthew J; Li, Zi-An; Phillips, Brandon; Song, Dongsheng; Mathur, Nitish; Dunin-Borkowski, Rafal E; Jin, Song

    2017-01-11

    Magnetic skyrmions are topologically stable vortex-like spin structures that are promising for next generation information storage applications. Materials that host magnetic skyrmions, such as MnSi and FeGe with the noncentrosymmetric cubic B20 crystal structure, have been shown to stabilize skyrmions upon nanostructuring. Here, we report a chemical vapor deposition method to selectively grow nanowires (NWs) of cubic FeGe out of three possible FeGe polymorphs for the first time using finely ground particles of cubic FeGe as seeds. X-ray diffraction and transmission electron microscopy (TEM) confirm that these micron-length NWs with ∼100 nm to 1 μm diameters have the cubic B20 crystal structure. Although Fe 13 Ge 8 NWs are also formed, the two types of NWs can be readily differentiated by their faceting. Lorentz TEM imaging of the cubic FeGe NWs reveals a skyrmion lattice phase under small applied magnetic fields (∼0.1 T) at 233 K, a skyrmion chain state at lower temperatures (95 K) and under high magnetic fields (∼0.4 T), and a larger skyrmion stability window than bulk FeGe. This synthetic approach to cubic FeGe NWs that support stabilized skyrmions opens a route toward the exploration of new skyrmion physics and devices based on similar nanostructures.

  12. Growth of transparent conducting nanocrystalline Al doped ZnO thin films by pulsed laser deposition

    Science.gov (United States)

    Shukla, R. K.; Srivastava, Anchal; Srivastava, Atul; Dubey, K. C.

    2006-09-01

    Nanocrystalline thin films of Al doped ZnO (Al:0-5 at%) with low electrical resistivity and high optical transparency have been grown by pulsed laser deposition. X-ray diffraction patterns showed the presence of hexagonal wurtzite ZnO phase with strong c-axis orientation in all the cases. The c-axis lattice parameter was found to increase with increase in Al doping. The average grain size in the film decreases from ˜38 to ˜25 nm with increasing Al concentration from 0 to 5 at%. For a critical doping of 2 at%, the resistivity of the AZO film is minimum (6×10 -4 Ω-cm) and the average optical transparency is nearly 85%. The band gap increases with increase in doping which is in accordance to Burstein-Moss shift. A blue shift in the absorption edge of ZnO with increasing Al concentration in the film is noteworthy as it leads to increase in the width of the transmission window.

  13. Growth and characterization of deposits in the combustion chamber of a diesel engine fueled with B50 and Indonesian biodiesel fuel (IBF

    Directory of Open Access Journals (Sweden)

    M Taufiq Suryantoro

    2016-12-01

    Full Text Available Although used since 1893, biodiesel still faces problems that must be overcome before it can fully replace petroleum diesel. Existing literature shows that continuous use of biodiesel could lead to higher growth of deposits on critical engine components, contributing to lots of problems that could ultimately decrease engine performance. In this context, endurance tests were performed to compare the impacts of B50 and Indonesian biodiesel fuel (IBF: diesel fuel containing 10% palm oil biodiesel on engine durability. More specifically, deposits growth as well as deposits structure and composition in response to the application of the above-mentioned fuel blends were investigated over 200 h. The results revealed that B50 produced relatively larger amounts of deposits especially on the valves and injector tip while also increased the risk of ring sticking. In addition, the structure and the elemental composition of the deposits formed on engine important components, i.e., injector tips, piston crown, intake/exhaust valves, cylinder head, and piston grooves when B50 was used were quite different compared with the IBF. Overall, more deposits formation was observed by increasing biodiesel inclusion rate while deposits tended to be wet and brittle as well.

  14. Effects of flavones of sea buckthorn fruits on growth performance, carcass quality, fat deposition and lipometabolism for broilers.

    Science.gov (United States)

    Ma, J S; Chang, W H; Liu, G H; Zhang, S; Zheng, A J; Li, Y; Xie, Q; Liu, Z Y; Cai, H Y

    2015-11-01

    The objective of this study was to evaluate the effects of different levels of flavones of sea buckthorn fruits (FSBF) on growth performance, carcass quality, fat deposition, and lipometabolism for broilers. 240 one-day-old Arbor Acres male broilers were randomly allotted to 4 dietary treatments (0, 0.05%, 0.10%, and 0.15% FSBF) with 6 replicates of 10 birds. Broilers were reared for 42 d. Results showed FSBF quadratically improved average daily feed intake (ADFI), average daily gain (ADG), and final body weight (BW) (P = 0.002, P = 0.019 and P = 0.018, respectively). The abdominal fat percentage in 0.05%, 0.10%, and 0.15% FSBF supplementation groups was decreased by 21.08%, 19.12%, and 19.61% with respect to the control group, respectively (P < 0.05). The intramuscular fat (IMF) content in the breast muscle of the broilers was increased by 7.21%, 23.42% and 6.30% in 0.05%, 0.10% and 0.15% FSBF groups, and that in the thigh meat was raised by 4.43%, 24.63% and 12.32%, compared with the control group, respectively (P < 0.05). FSBF had a quadratic effect on the abdominal fat percentage and IMF in the breast muscle (P < 0.05). Dietary FSBF also modified fatty acids of muscular tissues, resulting in a higher ratio of unsaturated to saturated fatty acids (P < 0.05). Supplementing FSBF in the diet greatly decreased the levels of triglyceride, cholesterol, and low-density lipoprotein cholesterol (P < 0.05). Moreover, the quadratic responses were also observed in the levels of insulin and adiponectin in serum (P = 0.020 and P = 0.037, respectively). Abdominal fat percentage was correlated negatively with insulin and positively with adiponectin (P < 0.05). IMF content in the breast and thigh muscles were correlated positively with insulin, and negatively with adiponectin (P < 0.05). A positive correlation existed between breast muscle, IMF, and leptin (P < 0.05). In conclusion, adding FSBF into the diets affected growth performance and fat deposition of broilers by

  15. Porcine Is a Positional Candidate Gene Associated with Growth and Fat Deposition

    Directory of Open Access Journals (Sweden)

    Bong Hwan Choi

    2012-12-01

    Full Text Available Crosses between Korean and Landrace pigs have revealed a large quantitative trait loci (QTL region for fat deposition in a region (89 cM of porcine chromosome 4 (SSC4. To more finely map this QTL region and identify candidate genes for this trait, comparative mapping of pig and human chromosomes was performed in the present study. A region in the human genome that corresponds to the porcine QTL region was identified in HSA1q21. Furthermore, the LMNA gene, which is tightly associated with fat augmentation in humans, was localized to this region. Radiation hybrid (RH mapping using a Sus scrofa RH panel localized LMNA to a region of 90.3 cM in the porcine genome, distinct from microsatellite marker S0214 (87.3 cM. Two-point analysis showed that LMNA was linked to S0214, SW1996, and S0073 on SSC4 with logarithm (base 10 of odds scores of 20.98, 17.78, and 16.73, respectively. To clone the porcine LMNA gene and to delineate the genomic structure and sequences, including the 3′untranslated region (UTR, rapid amplification of cDNA ends was performed. The coding sequence of porcine LMNA consisted of 1,719 bp, flanked by a 5’UTR and a 3’UTR. Two synonymous single nucleotide polymorphisms (SNPs were identified in exons 3 and 7. Association tests showed that the SNP located in exon 3 (A193A was significantly associated with weight at 30 wks (p<0.01 and crude fat content (p<0.05. This association suggests that SNPs located in LMNA could be used for marker-assisted selection in pigs.

  16. Growth patterns of abdominal atherosclerotic calcified deposits from lumbar lateral X-rays

    DEFF Research Database (Denmark)

    Erleben, Lene Lillemark; Ganz, Melanie; Barascuk, Natasha

    2010-01-01

    The aim of this study is to investigate new methods for describing the progression of atherosclerosis based on novel information of the growth patterns of individual abdominal aortic calcifications (AACs) over time. Lateral X-ray images were used due to their low cost, fast examination time......, and wide-spread use, which facilitates a large statistical model (n > 100) based on longitudinal data. The examined cohort consisted of 103 post-menopausal women aged 62.4 years (±7.0 years) with an average number of AACs of (4.7 ± 8.0) at baseline. The subjects had X-ray images taken in 1992...

  17. Improved growth of solution-deposited thin films on polycrystalline Cu(In,Ga)Se{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Witte, Wolfram; Hariskos, Dimitrios [Zentrum fuer Sonnenenergie- und Wasserstoff-Forschung Baden-Wuerttemberg (ZSW), 70565, Stuttgart (Germany); Abou-Ras, Daniel [Helmholtz-Zentrum Berlin fuer Materialien und Energie, 14109, Berlin (Germany)

    2016-04-15

    CdS and Zn(O,S) grown by chemical bath deposition (CBD) are well established buffer materials for Cu(In,Ga)Se{sub 2} (CIGS) solar cells. As recently reported, a non-contiguous coverage of CBD buffers on CIGS grains with {112} surfaces can be detected, which was explained in terms of low surface energies of the {112} facets, leading to deteriorated wetting of the chemical solution on the CIGS surface. In the present contribution, we report on the effect of air annealing of CIGS thin films prior to the CBD of CdS and Zn(O,S) layers. In contrast to the growth on the as-grown CIGS layers, these buffer lay- ers grow densely on the annealed CIGS layer, even on grains with {112} surfaces. We explain the different growth behavior by increased surface energies of CIGS grains due to the annealing step, i.e., due to oxidation of the CIGS surface. Reference solar cells were processed and completed by i-ZnO/ZnO:Al layers for CdS and by (Zn,Mg)O/ZnO:Al for Zn(O,S) buffers. For solar cells with both, CdS and Zn(O,S) buffers, air-annealed CIGS films with improved buffer coverage resulted in higher power-conversion efficiencies, as compared with the devices containing as-grown CIGS layers. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  18. Epitaxial growth of HfS2 on sapphire by chemical vapor deposition and application for photodetectors

    Science.gov (United States)

    Wang, Denggui; Zhang, Xingwang; Liu, Heng; Meng, Junhua; Xia, Jing; Yin, Zhigang; Wang, Ye; You, Jingbi; Meng, Xiang-Min

    2017-09-01

    Group IVB transition metal (Zr and Hf) dichalcogenides (TMDs) have been attracting intensive attention as promising candidates in the modern electronic and/or optoelectronic fields. However, the controllable growth of HfS2 monolayers or few layers still remains a great challenge, thus hindering their further applications so far. Here, for the first time we demonstrate the epitaxial growth of high-quality HfS2 with a controlled number of layers on c-plane sapphire substrates by chemical vapor deposition (CVD). The HfS2 layers exhibit an atomically sharp interface with the sapphire substrate, followed by flat, 2D layers with octahedral coordination. The epitaxial relationship between HfS2 and substrate was determined by x-ray diffraction and transmission electron microscopy measurements to be: HfS2 (0 0 0 1) [10-10]||sapphire (0 0 0 1)[1-100]. Moreover, a high-performance photodetector with a high on/off ratio of more than 103 and an ultrafast response rate of 130 µs for the rise and 155 µs for the decay times were fabricated based on the CVD-grown HfS2 layers on sapphire substrates. This simple and controllable approach opens up a new way to produce highly crystalline HfS2 atomic layers, which are promising materials for nanoelectronics.

  19. Suppression of Graphene Nucleation by Turning Off Hydrogen Supply Just before Atmospheric Pressure Chemical Vapor Deposition Growth

    Directory of Open Access Journals (Sweden)

    Seiya Suzuki

    2017-11-01

    Full Text Available To exploit the extraordinary property of graphene in practical electrical and optical devices, it is necessary to produce large-sized, single-crystal graphene. Atmospheric pressure chemical vapor deposition (APCVD on polycrystalline Cu surface is a promising scalable route of graphene synthesis but the unavoidable multiple nucleation limits their reachable domain size. Here, we report that effective suppression of nucleation was achieved by only turning off hydrogen supply before introduction of the carbon source for graphene growth. The density of graphene decreased from 72.0 to 2.2 domains/cm2 by turning off hydrogen for 15 min. X-ray photoelectron spectroscopy and Raman spectroscopy studies show that the Cu surface was covered with 3–4 nm thick highly crystalline Cu2O, which would be caused by oxidation by residual oxidative gasses in the chamber during the turning off period. It was also revealed that elevating the temperature in Ar followed by annealing in H2/Ar before turning off hydrogen led to the enlargement of the Cu domain, resulting in the further suppression of nucleation. By optimizing such growth parameters in the CVD process, a single-crystal graphene with ~2.6 mm in diameter was successfully obtained.

  20. Recent Progress in the Growth of Mid-Infrared Emitters by Metal-Organic Chemical Vapor Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Biefeld, R.M.; Allerman, A.A.; Kurtz, S.R.; Baucom, K.C.

    1998-01-01

    We report on recent progress and improvements in the metal-organic chemical vapor deposition (MOCVD) growth of mid-infrared lasers and using a high speed rotating disk reactor (RDR). The devices contain AlAsSb active regions. These lasers have multi-stage, type I InAsSb/InAsP quantum well active regions. A semi-metal GaAsSb/InAs layer acts as an internal electron source for the multi-stage injection lasers and AlAsSb is an electron confinement layer. These structures are the first MOCVD multi-stage devices. Growth in an RDR was necessary to avoid the previously observed Al memory effects found in conventional horizontal reactors. A single stage, optically pumped laser yielded improved power (greater than 650 mW/facet) at 80K and 3.8um. A multi-stage 3.8-3.9um laser structure operated up to T=170K. At 80K, peak power greater than 100mW and a high slope- efficiency were observed in gain guided lasers.

  1. The Effects of L-arginine Supplement on Growth, Meat Production, and Fat Deposition in Broiler Chickens

    Directory of Open Access Journals (Sweden)

    Marziyeh Ebrahimi

    2014-04-01

    Full Text Available The objective of the present study was to investigate the effects of dietary L-arginine on performance, meat production and its chemical composition, carcass fat deposition, intestine morphology and blood parameters of Ross broiler chickens during 46 days. In this experiment, 192 day old commercial female Ross broiler chicks were used with 4 dietary treatments and 4 replications in a completely randomized design. Dietary treatments included 100, 153, 168 and 183 percentages of digestible arginine, based on the Ross catalogue recommendation. On 46th day of experiment, three chickens per replication were selected randomly, blood samples were collected from each, and thereafter they were slaughtered in order to measure carcass traits, intestine morphology and meat chemical composition. The results showed that dietary arginine treatments caused a significant increase on body weight, carcass efficiency, muscle yield, protein and fat content of muscle, heart weight, and growth of small intestine, while decreased abdominal fat weight. Arginine supplementation increased plasma concentrations of triiodothyronine and thyroxine, but reduced plasma concentrations of cholesterol, triglyceride, and urea. According to the results of this study, consumption level of 168% digestible arginine, based on the Ross catalogue recommendation, had the best results on growth improvement and carcass traits, while consumption level of 183% digestible arginine had the greatest fat carcass reduction.

  2. Structural evolution during chemical vapor deposition of diamond thin films

    Science.gov (United States)

    Morell, G.; Cancel, L. M.; Figueroa, O. L.; González, J. A.; Weiner, B. R.

    2000-11-01

    In situ phase-modulated ellipsometry was employed to monitor the nucleation and growth processes of diamond thin films fabricated by chemical vapor deposition. The effective extinction coefficient (k) at 1.96 eV was used as a basis for dividing the deposition process into intervals. The film growth was aborted at various k values yielding diamond film samples that represent snapshots of the growth process at different stages. Ex situ characterization of the films was performed using Raman spectroscopy, scanning electron microscopy, and x-ray diffraction. The results indicate that the diamond film deposition process consists of various stages in which the crystalline quality, the net compressive stress, and the relative amount of non-sp3 carbon follow different trends. A correlation between the effective k value measured in situ and the film microstructure characterized ex situ was established which enables the monitoring of the diamond film growth process in real time.

  3. Transcriptomic profiling in muscle and adipose tissue identifies genes related to growth and lipid deposition.

    Science.gov (United States)

    Tao, Xuan; Liang, Yan; Yang, Xuemei; Pang, Jianhui; Zhong, Zhijun; Chen, Xiaohui; Yang, Yuekui; Zeng, Kai; Kang, Runming; Lei, Yunfeng; Ying, Sancheng; Gong, Jianjun; Gu, Yiren; Lv, Xuebin

    2017-01-01

    Growth performance and meat quality are important traits for the pig industry and consumers. Adipose tissue is the main site at which fat storage and fatty acid synthesis occur. Therefore, we combined high-throughput transcriptomic sequencing in adipose and muscle tissues with the quantification of corresponding phenotypic features using seven Chinese indigenous pig breeds and one Western commercial breed (Yorkshire). We obtained data on 101 phenotypic traits, from which principal component analysis distinguished two groups: one associated with the Chinese breeds and one with Yorkshire. The numbers of differentially expressed genes between all Chinese breeds and Yorkshire were shown to be 673 and 1056 in adipose and muscle tissues, respectively. Functional enrichment analysis revealed that these genes are associated with biological functions and canonical pathways related to oxidoreductase activity, immune response, and metabolic process. Weighted gene coexpression network analysis found more coexpression modules significantly correlated with the measured phenotypic traits in adipose than in muscle, indicating that adipose regulates meat and carcass quality. Using the combination of differential expression, QTL information, gene significance, and module hub genes, we identified a large number of candidate genes potentially related to economically important traits in pig, which should help us improve meat production and quality.

  4. Evaporation temperature-tuned physical vapor deposition growth engineering of one-dimensional non-Fermi liquid tetrathiofulvalene tetracyanoquinodimethane thin films

    DEFF Research Database (Denmark)

    Sarkar, I.; Laux, M.; Demokritova, J.

    2010-01-01

    We describe the growth of high quality tetrathiofulvalene tetracyanoquinodimethane (TTF-TCNQ) organic charge-transfer thin films which show a clear non-Fermi liquid behavior. Temperature dependent angle resolved photoemission spectroscopy and electronic structure calculations show that the growth...... of TTF-TCNQ films is accompanied by the unfavorable presence of neutral TTF and TCNQ molecules. The quality of the films can be controlled by tuning the evaporation temperature of the precursor in physical vapor deposition method....

  5. Fundamentals of MOF Thin Film Growth via Liquid-Phase Epitaxy: Investigating the Initiation of Deposition and the Influence of Temperature.

    Science.gov (United States)

    Ohnsorg, Monica L; Beaudoin, Christopher K; Anderson, Mary E

    2015-06-09

    Thin films can integrate the versatility and great potential found in the emerging field of metal-organic frameworks directly into device architectures. For fabrication of smart interfaces containing surface-anchored metal-organic frameworks, it is important to understand how the foundational layers form to create the interface between the underlying substrate and porous framework. Herein, the formation and morphology of the first ten cycles of film deposition are investigated for the well-studied HKUST-1 system. Effects of processing variables, such as deposition temperature and substrate quality, are studied. Sequences of scanning probe microscopy images collected after cycles of alternating solution-phase deposition reveal the formation of a discontinuous surface with nucleating and growing crystallites consistent with a Volmer-Weber growth mechanism. Quantitative image analysis determines surface roughness and surface coverage as a function of deposition cycles, producing insight regarding growth and structure of foundational film layers. For carboxylic acid terminated self-assembled monolayers on gold, preferred crystal orientation is influenced by deposition temperature with crystal growth along [100] observed at 25 °C and [111] favored at 50 °C. This difference in crystal orientation results in reduced surface roughness and increased surface coverage at 50 °C. To properly fabricate and fully determine the potential of this material for industrial applications, fundamental understanding of film formation is crucial.

  6. Growth of thin Al{sub 2}O{sub 3} films on biaxially oriented polymer films by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Vaehae-Nissi, Mika, E-mail: mika.vaha-nissi@vtt.fi [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044 VTT (Finland); Kauppi, Emilia, E-mail: emilia.kauppi@vti.fi [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044 VTT (Finland); Sahagian, Khoren, E-mail: khoren@anasysinstruments.com [Anasys Instruments, 121 Gray Avenue, Suite 100, Santa Barbara, CA 93101 (United States); Johansson, Leena-Sisko, E-mail: leena-sisko.johansson@aalto.fi [Aalto University, School of Chemical Technology, Department of Forest Products Technology, P.O. Box 16100, FI-00076 AALTO (Finland); Peresin, Maria Soledad; Sievaenen, Jenni; Harlin, Ali [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044 VTT (Finland)

    2012-11-01

    The effects of thin film nucleation and initial growth on roughness, chemistry and thermomechanical properties of polymer film surfaces were studied. Al{sub 2}O{sub 3} was deposited onto commercial biaxially oriented polypropylene and polylactic acid films at 80 Degree-Sign C by using atomic layer deposition technique. Both substrates, especially the more hydrophobic polypropylene, showed initial growth through Al{sub 2}O{sub 3} clusters. There was a faster deposition of Al{sub 2}O{sub 3} on polylactic acid film than on polypropylene at the early stages of the Al{sub 2}O{sub 3} deposition. There were also indications of chemical interactions between polylactic acid and trimethyl aluminum used as a precursor for Al{sub 2}O{sub 3}. Changes in the thermo-mechanical properties of the polymer surfaces with Al{sub 2}O{sub 3} also evidenced the differences between the substrate polymer films. The near surface interphase formed in polylactic acid probably contributed to the strong increase and scattering in the softening temperature during the early thin film growth. - Highlights: Black-Right-Pointing-Pointer Growth of atomic layer deposited Al{sub 2}O{sub 3} at 80 Degree-Sign C was studied on commercial films. Black-Right-Pointing-Pointer Both substrate films showed early Al{sub 2}O{sub 3} growth through clusters. Black-Right-Pointing-Pointer Initial growth rate depends on the nature of the substrate film surface. Black-Right-Pointing-Pointer There were indications of chemical interactions between substrate and precursor. Black-Right-Pointing-Pointer Film thickness and chemical interactions affect thermo-mechanical properties.

  7. The growth of nanostructured Cu{sub 2}ZnSnS{sub 4} films by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Che Sulaiman, Nurul Suhada; Nee, Chen Hon [Faculty of Engineering, Multimedia University, 63100 Cyberjaya, Selangor (Malaysia); Yap, Seong Ling [Department of Physics, University of Malaya, 50603 Kuala Lumpur (Malaysia); Lee, Yen Sian [UM Power Energy Dedicated Advanced Centre (UMPEDAC), University of Malaya, 50603 Kuala Lumpur (Malaysia); Tou, Teck Yong [Faculty of Engineering, Multimedia University, 63100 Cyberjaya, Selangor (Malaysia); Yap, Seong Shan, E-mail: seongshan@gmail.com [UM Power Energy Dedicated Advanced Centre (UMPEDAC), University of Malaya, 50603 Kuala Lumpur (Malaysia)

    2015-11-01

    Highlights: • Nanostructured CZTS films were grown at room temperature by using 355 nm laser. • CZTS films with E{sub g} of 1.9 eV have been obtained at 2 J cm{sup −2} at room temperature. • At high fluence, Cu/Sn rich droplets affected the overall quality of the films. • Improved crystallinity and E{sub g} of 1.5 eV was obtained at substrate temperature as low as 100 °C. - Abstract: In this work, we investigated on the growth of Cu{sub 2}ZnSnS{sub 4} films by using pulsed Nd:YAG laser (355 nm) ablation of a quaternary Cu{sub 2}ZnSnS{sub 4} target. Depositions were performed at laser fluence from 0.5 to 4 J cm{sup −2}. The films were grown at substrate temperature from 27 °C to 300 °C onto glass and silicon substrates. The dependence of the film morphology, composition, and optical properties are studied and discussed with respect to laser fluence and substrate temperature. Composition analysis from energy dispersive X-ray spectral results show that CZTS films with composition near stoichiometric were obtained at an optimized fluence at 2 J cm{sup −2} by 355 nm laser where the absorption coefficient is >10{sup 4} cm{sup −1}, and optical band gap from a Tauc plot was ∼1.9 eV. At high fluence, Cu and Sn rich droplets were detected which affect the overall quality of the films. The presence of the droplets was associated to the high degree of preferential and subsurface melting on the target during high fluence laser ablation. Crystallinity and optical band gap (1.5 eV) were improved when deposition was performed at substrate temperature of 100 °C.

  8. Growth of polycrystalline nickel hydroxide films from aqueous solution. Solution chemistry, deposition methods, film morphology and texture

    Energy Technology Data Exchange (ETDEWEB)

    Presto, Sabrina, E-mail: s.presto@ge.ieni.cnr.it [Institute of Energetics and Interphases, National Research Council, Via De Marini 6, I-16149, Genoa (Italy); Giraud, Damien [ESIREM, Université de Bourgogne, avenue Alain Savary 9, BP 47870, 21078 Dijon Cedex (France); Testino, Andrea [Chemical Process and Materials, Swiss Federal Institute of Technology Domain, Paul Scherrer Institute, CH-5232 Villigen PSI (Switzerland); Bottino, Carlo; Viviani, Massimo; Buscaglia, Vincenzo [Institute of Energetics and Interphases, National Research Council, Via De Marini 6, I-16149, Genoa (Italy)

    2014-02-03

    Deposition of functional ceramic films on different substrates by using soft aqueous solution processing can represent a cheap, low- energy and environmental friendly alternative to other film technologies. In this study β-Ni(OH){sub 2} polycrystalline films were grown on polytetrafluoroethylene, NiO, glass, copper, and Y:ZrO{sub 2} substrates from Ni{sup 2+}–NH{sub 4}OH aqueous solutions. A careful control of solution supersaturation was essential to induce heterogeneous nucleation on the substrate and film growth. This was realized through the gradual decomposition of the nickel amino complexes Ni(NH{sub 3}){sub n}{sup 2+} using two different methods. Thermodynamic modeling of the Ni–NH{sub 4}OH–H{sub 2}O system was used to provide some general indications for defining the experimental conditions most suitable for film deposition and understanding the role of solution chemistry on film formation. Film microstructure and texture can be controlled by varying the substrate, the ammonia concentration, the ammonia evaporation rate, the soaking time and by adding a surfactant like sodium dodecylbenzensulphonate. As a result, films with different morphologies and orientations, as well as a uniform decoration of the substrate surface with Ni(OH){sub 2} crystals, were obtained. The proposed method can be extended to the preparation of oxide and hydroxide films of other transition metals forming moderately stable amino complexes. - Highlights: • Polycrystalline films of Ni(OH){sub 2} were grown from Ni{sup 2+}–NH{sub 4}OH aqueous solution. • Experiments are supported by thermodynamic modeling. • Films were grown on different substrates, including plastic, glass, metal and ceramic. • Film morphology and texture are controlled by the substrate and physical–chemical variables.

  9. Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

    DEFF Research Database (Denmark)

    Vincent, B.; Gencarelli, F.; Bender, H.

    2011-01-01

    In this letter, we propose an atmospheric pressure-chemical vapor deposition technique to grow metastable GeSn epitaxial layers on Ge. We report the growth of defect free fully strained undoped and in-situ B doped GeSn layers on Ge substrates with Sit contents up to 8%. Those metastable layers stay...

  10. Growth mechanism, surface and optical properties of ZnO nanostructures deposited on various Au-seeded thickness obtained by mist-atomization

    Energy Technology Data Exchange (ETDEWEB)

    Afaah, A. N., E-mail: afaahabdullah@yahoo.com; Aadila, A., E-mail: aadilaazizali@gmail.com; Asib, N. A. M., E-mail: amierahasib@yahoo.com; Khusaimi, Z., E-mail: zurai142@salam.uitm.edu.my [NANO-SciTech Centre (NST), Institute of Science, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Faculty of Applied Sciences, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Mohamed, R., E-mail: ruzianamohd@pahang.uitm.edu.my [NANO-Electronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Rusop, M., E-mail: nanouitm@gmail.com [NANO-SciTech Centre (NST), Institute of Science, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); NANO-Electronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia)

    2016-07-06

    In this paper, growth mechanisms of ZnO nanostructures on non-seeded glass, 6 nm and 12 nm Au seed layer obtained by mist-atomization was proposed. ZnO films were successfully deposited on glass substrate with different thickness of Au seed layer i.e. 6 nm and 12 nm. The surface and optical properties of the prepared samples were investigated using Field emission scanning electron microscopy (FESEM) and photoluminescence (PL). FESEM micrograph show that ZnO nanostructure deposited on 6 nm Au seed layer has uniform formation and well distributed. From PL spectroscopy, the UV emission shows that ZnO deposited on 6 nm Au seed layer has the more intense UV intensity which proved that high crystal quality of nanostructured ZnO deposited on 6 nm Au seed layer.

  11. Effect of growth temperature, thermal annealing and nitrogen doping on optoelectronic properties of sputter-deposited ZnTe films

    Energy Technology Data Exchange (ETDEWEB)

    Rakhshani, A.E., E-mail: ali.rakhshani@ku.edu.kw

    2013-06-01

    Thin films of zinc telluride were grown on glass substrate at different temperatures by magnetron sputtering. Nitrogen-doped films were also prepared at different doping levels. Films underwent a post deposition thermal annealing at low pressure of nitrogen. The film structure, optical and electrical properties were studied using various techniques. The results revealed that the films are composed from nano-size grains (3 – 19 nm) with cubic lattice structure. The grain growth during deposition is thermally activated with the activation energy of 108 meV. Direct optical transitions occurring from the valence band and also from the spin-orbit valence band to either a band gap defect level (for as-grown films) or to the conduction band (for annealed films) have been observed. The valence band split energy is found to be in the range 0.82 – 1.10 eV. The defect level, likely related to oxygen impurities, is located 1.77 eV above the valence band edge. The band gap energy of the annealed films is in the range 2.13 – 2.20 eV and the films doped with nitrogen, at optimum condition, have a free hole concentration and mobility of 2.9 × 10{sup 18} cm{sup −3} and 1.4 cm{sup 2} V{sup −1} s{sup −1}, respectively. - Highlights: • Undoped and nitrogen doped ZnTe films were grown on glass by sputtering technique. • Growth temperature varied in the range 35– 305 °C. • Optimum doping was achieved at the N{sub 2}/(N{sub 2} + Ar) flow rate ratio of 2%. • At optimum condition 2.9 × 10{sup 18} holes/cm{sup 3} with mobility 1.4 cm{sup 2} V{sup −1} s{sup −1} were obtained. • The split valence band and oxygen defects contribute to the absorption of light.

  12. Microwave plasma enhanced chemical vapor deposition growth of few-walled carbon nanotubes using catalyst derived from an iron-containing block copolymer precursor.

    Science.gov (United States)

    Wang, Peng; Lu, Jennifer; Zhou, Otto

    2008-05-07

    The microwave plasma enhanced chemical vapor deposition (MPECVD) method is now commonly used for directional and conformal growth of carbon nanotubes (CNTs) on supporting substrates. One of the shortcomings of the current process is the lack of control of the diameter and diameter distribution of the CNTs due to difficulties in synthesizing well-dispersed catalysts. Recently, block copolymer derived catalysts have been developed which offer the potential of fine control of both the size of and the spacing between the metal clusters. In this paper we report the successful growth of CNTs with narrow diameter distribution using polystyrene-block-polyferrocenylethylmethylsilane (PS-b-PFEMS) as the catalyst precursor. The study shows that higher growth pressure leads to better CNT growth. Besides the pressure, the effects on the growth of CNTs of the growth parameters, such as temperature and precursor gas ratio, are also studied.

  13. The influence of methanol addition during the film growth of SnO 2 by atmospheric pressure chemical vapor deposition

    NARCIS (Netherlands)

    Volintiru, I.; Graaf, A. de; Deelen, J. van; Poodt, P.W.G.

    2011-01-01

    Undoped tin oxide (SnO2) thin films have been deposited in a stagnant point flow chemical vapor deposition reactor from a water/tin tetrachloride mixture. By adding methanol during the deposition process the film electrical properties change significantly: ten times more conductive SnO 2 films are

  14. Impact of permethrin-treated bed nets on malaria, anemia, and growth in infants in an area of intense perennial malaria transmission in western Kenya

    NARCIS (Netherlands)

    ter Kuile, Feiko O.; Terlouw, Dianne J.; Kariuki, Simon K.; Phillips-Howard, Penelope A.; Mirel, Lisa B.; Hawley, William A.; Friedman, Jennifer F.; Shi, Ya Ping; Kolczak, Margarette S.; Lal, Altaf A.; Vulule, John M.; Nahlen, Bernard L.

    2003-01-01

    As part of a community-based, group-randomized, controlled trial of insecticide-treated bed nets (ITNs) in an area with intense malaria transmission in western Kenya, a birth cohort (n = 833) was followed monthly until the age of 24 months to determine the potential beneficial and adverse effects of

  15. Growth and characterization of ternary Ni, Mg–Al and Ni–Al layered double hydroxides thin films deposited by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Birjega, R. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., Magurele, 76900 Bucharest (Romania); Vlad, A., E-mail: angela.vlad@gmail.com [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., Magurele, 76900 Bucharest (Romania); Matei, A.; Ion, V.; Luculescu, C.; Dinescu, M. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., Magurele, 76900 Bucharest (Romania); Zavoianu, R. [University of Bucharest, Faculty of Chemistry, Department of Chemical Technology and Catalysis, 4-12 Regina Elisabeta Bd., Bucharest (Romania)

    2016-09-01

    Layered double hydroxides (LDHs) are a class of layered materials consisting of positively charged brucite-like layers and exchangeable interlayer anions. Layered double hydroxides containing a transition metal which undergoes a reversible redox reaction in the useful potential range have been proposed as electrode coating materials due to their properties of charge transport and redox catalysts in basic solutions. Ni–Al,(Ni,Mg)–Al and, as reference, non-electronically conductive Mg–Al double hydroxides thin films were obtained via pulsed laser deposition technique. The thin films were deposited on different substrates (Si, glass) by using a Nd:YAG laser (1064 nm) working at a repetition rate of 10 Hz. X-ray diffraction, Atomic Force Microscopy, Energy Dispersive X-ray spectroscopy, Fourier Transform Infra-Red Spectroscopy, Secondary Ions Mass Spectrometry, Impedance Analyzer and ellipsometry were the techniques used for the as deposited thin films investigation. The optical properties of Ni based LDH thin films and the effect of the Ni amount on the structural, morphological and optical response are evidenced. The optical band gap values, covering a domain between 3.84 eV and 4.38 eV, respond to the Ni overall concentration: the higher Ni amount the lower the band gap value. - Highlights: • Ternary Ni, Mg–Al and Ni–Al layered double hydroxides thin films were deposited. • The effect of the nickel is evidenced. • The possibility to tailor the materials accompanied by an optical response is shown.

  16. Size- and density-controlled deposition of Ag nanoparticle films by a novel low-temperature spray chemical vapour deposition method—research into mechanism, particle growth and optical simulation

    Science.gov (United States)

    Liu, Yang; Plate, Paul; Hinrichs, Volker; Köhler, Tristan; Song, Min; Manley, Phillip; Schmid, Martina; Bartsch, Peter; Fiechter, Sebastian; Lux-Steiner, Martha Ch.; Fischer, Christian-Herbert

    2017-04-01

    Ag nanoparticles have attracted interest for plasmonic absorption enhancement of solar cells. For this purpose, well-defined particle sizes and densities as well as very low deposition temperatures are required. Thus, we report here a new spray chemical vapour deposition method for producing Ag NP films with independent size and density control at substrate temperatures even below 100 °C, which is much lower than for many other techniques. This method can be used on different substrates to deposit Ag NP films. It is a reproducible, low-cost process which uses trimethylphosphine (hexafluoroacetylacetonato) silver as a precursor in alcoholic solution. By systematic variation of deposition parameters and classic experiments, mechanisms of particle growth and of deposition processes as well as the low decomposition temperature of the precursor could be explained. Using the 3D finite element method, absorption spectra of selected samples were simulated, which fitted well with the measured results. Hence, further applications of such Ag NP films for generating plasmonic near field can be predicted by the simulation.

  17. Size- and density-controlled deposition of Ag nanoparticle films by a novel low-temperature spray chemical vapour deposition method—research into mechanism, particle growth and optical simulation

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Yang, E-mail: yang.liu@helmholtz-berlin.de; Plate, Paul, E-mail: paul.plate@helmholtz-berlin.de; Hinrichs, Volker; Köhler, Tristan; Song, Min; Manley, Phillip; Schmid, Martina [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH (Germany); Bartsch, Peter [Beuth Hochschule für Technik Berlin, Fachbereich VIII Maschinenbau, Veranstaltungstechnik, Verfahrenstechnik (Germany); Fiechter, Sebastian; Lux-Steiner, Martha Ch. [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH (Germany); Fischer, Christian-Herbert [Freie Universität Berlin, Institute of Chemistry and Biochemistry (Germany)

    2017-04-15

    Ag nanoparticles have attracted interest for plasmonic absorption enhancement of solar cells. For this purpose, well-defined particle sizes and densities as well as very low deposition temperatures are required. Thus, we report here a new spray chemical vapour deposition method for producing Ag NP films with independent size and density control at substrate temperatures even below 100 °C, which is much lower than for many other techniques. This method can be used on different substrates to deposit Ag NP films. It is a reproducible, low-cost process which uses trimethylphosphine (hexafluoroacetylacetonato) silver as a precursor in alcoholic solution. By systematic variation of deposition parameters and classic experiments, mechanisms of particle growth and of deposition processes as well as the low decomposition temperature of the precursor could be explained. Using the 3D finite element method, absorption spectra of selected samples were simulated, which fitted well with the measured results. Hence, further applications of such Ag NP films for generating plasmonic near field can be predicted by the simulation.

  18. Epitaxial growth of 2 inch diameter homogeneous AlN single-crystalline films by pulsed laser deposition

    Science.gov (United States)

    Yang, Hui; Wang, Wenliang; Liu, Zuolian; Li, Guoqiang

    2013-03-01

    2 inch diameter homogeneous AlN films are epitaxially grown on sapphire substrates by pulsed laser deposition (PLD). By optimizing laser rastering and PLD growth conditions, the 2 inch diameter single-crystalline AlN films exhibit excellent thickness uniformity with root-mean-square (RMS) inhomogeneity less than 4.5% and very smooth surface with RMS roughness less than 1.53 nm. There is a maximum of 1.5 nm thick interfacial layer, if there is any, existing between the as-grown AlN and the pre-nitrided sapphire substrate, and the as-grown AlN films are almost fully relaxed only with a 0.26% in-plane compressive strain. The achievement of high-quality large-scale AlN films with uniform thickness and atomically abrupt interface is of great interest for the commercial development of AlN-based devices, particularly acoustic filters where abrupt heterointerfaces with substrates and flat surfaces for AlN films are highly desired.

  19. A Comparative Study of Three Different Chemical Vapor Deposition Techniques of Carbon Nanotube Growth on Diamond Films

    Directory of Open Access Journals (Sweden)

    Betty T. Quinton

    2013-01-01

    Full Text Available This paper compares between the methods of growing carbon nanotubes (CNTs on diamond substrates and evaluates the quality of the CNTs and the interfacial strength. One potential application for these materials is a heat sink/spreader for high-power electronic devices. The CNTs and diamond substrates have a significantly higher specific thermal conductivity than traditional heat sink/spreader materials making them good replacement candidates. Only limited research has been performed on these CNT/diamond structures and their suitability of different growth methods. This study investigates three potential chemical vapor deposition (CVD techniques for growing CNTs on diamond: thermal CVD (T-CVD, microwave plasma-enhanced CVD (MPE-CVD, and floating catalyst thermal CVD (FCT-CVD. Scanning electron microscopy (SEM and high-resolution transmission electron microscopy (TEM were used to analyze the morphology and topology of the CNTs. Raman spectroscopy was used to assess the quality of the CNTs by determining the ID/IG peak intensity ratios. Additionally, the CNT/diamond samples were sonicated for qualitative comparisons of the durability of the CNT forests. T-CVD provided the largest diameter tubes, with catalysts residing mainly at the CNT/diamond interface. The MPE-CVD process yielded non uniform defective CNTs, and FCT-CVD resulted in the smallest diameter CNTs with catalyst particles imbedded throughout the length of the nanotubes.

  20. Growth of organic films on semiconductor surfaces: Fundamental reactivity studies and molecular layer deposition involving isocyanates and isothiocyanates

    Science.gov (United States)

    Loscutoff, Paul W.

    single molecule specificity. Coupling reactions between isocyanate and isothiocyanate moieties with amines to form polyurea and polythiourea films, respectively, are studied. The MLD films are analyzed by ex situ ellipsometry, IR spectroscopy, XPS, and DFT. A constant growth rate and monomer dose saturation is observed for both the urea and thiourea coupling chemistry, and chemical composition of the films agrees well with theoretical models. The ability to precisely control film composition is demonstrated through the deposition of polyurea blends, with a homogenous composition throughout the film, and polyurea laminates, with layers of distinct composition within the film. Organic films have shown promise as copper diffusion barrier layers, and the effectiveness of the MLD films as copper barrier layers is investigated through thermal stability, adhesion, and copper penetration measurements. The films demonstrate potential in this application, but further modification of the films is necessary to meet all the requirements necessary for barrier layer implementation. The thesis concludes with some perspectives on the future of organic films on semiconductors.

  1. Graphene crystal growth by thermal precipitation of focused ion beam induced deposition of carbon precursor via patterned-iron thin layers

    Directory of Open Access Journals (Sweden)

    Rius Gemma

    2014-01-01

    Full Text Available Recently, relevant advances on graphene as a building block of integrated circuits (ICs have been demonstrated. Graphene growth and device fabrication related processing has been steadily and intensively powered due to commercial interest; however, there are many challenges associated with the incorporation of graphene into commercial applications which includes challenges associated with the synthesis of this material. Specifically, the controlled deposition of single layer large single crystal graphene on arbitrary supports, is particularly challenging. Previously, we have reported the first demonstration of the transformation of focused ion beam induced deposition of carbon (FIBID-C into patterned graphitic layers by metal-assisted thermal treatment (Ni foils. In this present work, we continue exploiting the FIBID-C approach as a route for graphene deposition. Here, thin patterned Fe layers are used for the catalysis of graphenization and graphitization. We demonstrate the formation of high quality single and few layer graphene, which evidences, the possibility of using Fe as a catalyst for graphene deposition. The mechanism is understood as the minute precipitation of atomic carbon after supersaturation of some iron carbides formed under a high temperature treatment. As a consequence of the complete wetting of FIBID-C and patterned Fe layers, which enable graphene growth, the as-deposited patterns do not preserve their original shape after the thermal treatment

  2. Laboratory Simulation of Biogeochemical Interactions Between Cyanobacterium-Growth and CaCO3 Deposition: Implications for Carbon Accumulation Under Extreme Atmospheric Conditions of Precambrian Earth

    Science.gov (United States)

    Wu, Q.; Chen, L.; Chen, G.; Yang, H.

    2004-05-01

    The atmosphere of Precambrian Earth was characterized by high PCO2, low PO2, and high violent UV radiation. To better understand the interaction between cyanobacterium-growth and CaCO3 deposition in such extreme environments, we grew Oscillatoria tenuis, a prokaryotic alga that is morphologically similar to micro-fossils found in Precambrian chert, in the laboratory under controlled temperature and patial presure of CO2. During algal cell growth, oxygen was absorbed continously by chromous chloride oxygen-absorbent and the levels of PCO2 were controlled by adding different amounts of HCO3- (NaHCO3) in culture medium with initial pH 7.4. Our observation indicates that PCO2 excerises the first order of control on the accumulation of cyanobaterium biomass. Under 100,000 Pa of PCO2, the growth rate of cyanobaterium increases along with the elevation of CO2 partial pressure; however, when PCO2 is higher than 100,000 Pa, the increase of PCO2 results in the decrease of cyanobacterium biomass. On the other hand, photosynthesis of cyanobacteria controls CaCO3 deposition via the function of adjusting pH in the solution. In a 5 day cell growth experiment with PCO2 controlled at about 50,000 Pa and additional 0.0001, 0.001, 0.01, 0.1 and 1.0 M Ca2+ input separately at speed of 2.5 ml/h, the largest total biomass of cyanobacterium (896 mg/L) including living suspension cells and deposited cells was obtained when Ca2+ input was maintained at 0.01 M with 2.5 ml/h. Otherwise, less Ca2+ input resulted in more living suspension cells and less deposited cells. More Ca2+ input resulted in less living suspension cells and more deposited cells. At last both conditions were not good for cell growth and accumulation of organic matter in carbonate deposition in long term. Our laboratory simulation illustrates that the Ca2+ input is critical to CaCO3 deposition and such controls are indirectly enforced through the accumulation of cyanobacteria biomass under a warm, anoxic and high pCO2

  3. Nucleation and growth of hydroxyapatite on arc-deposited TiO2 surfaces studied by quartz crystal microbalance with dissipation

    Science.gov (United States)

    Lilja, Mirjam; Butt, Umer; Shen, Zhijian; Bjöörn, Dorota

    2013-11-01

    Understanding of nucleation and growth kinetics of biomimetically deposited hydroxyapatite (HA) on crystalline TiO2 surfaces is important with respect to the application and performance of HA as functional implant coatings. Arc-evaporation was used to deposit TiO2 coatings dominated by anatase phase, rutile phase or their mixtures. Subsequent formation of HA from phosphate buffered saline solution (PBS) was investigated in real-time using in situ quartz crystal microbalance with dissipation technique (QCM-D). Scanning electron microscopy (SEM) and X-ray diffraction (XRD) were employed to characterize the presence, morphology and crystal structure of TiO2 coatings and the formed HA. Increasing temperature of the PBS, increasing flow rate and applying a higher ion concentration in solution were found to accelerate HA nucleation process and hence affect growth kinetics. Lower PBS temperature resulted in the formation of HA coatings with flake-like morphology and increasing HA porosity. All TiO2 coatings under study enabled HA formation at body temperature, while in contrast Ti reference surfaces only supported HA nucleation and growth at elevated temperatures. QCM-D technique is a powerful tool for studying the impact of process parameters during biomimetic coating deposition on coating structure evolution in real time and provides valuable information for understanding, optimizing as well as tailoring the biomimetic HA growth processes.

  4. Nucleation and growth of hydroxyapatite on arc-deposited TiO{sub 2} surfaces studied by quartz crystal microbalance with dissipation

    Energy Technology Data Exchange (ETDEWEB)

    Lilja, Mirjam [Division for Nanotechnology and Functional Materials, Department of Engineering Sciences, The Ångström Laboratory, Uppsala University, Box 534, 75121 Uppsala (Sweden); Sandvik Coromant Sverige AB, Lerkrogsvägen 19, 12680 Stockholm (Sweden); Butt, Umer [Sandvik Coromant Sverige AB, Lerkrogsvägen 19, 12680 Stockholm (Sweden); Berzelii Centre EXSELENT on Porous Materials and Department of Materials and Environmental Chemistry, Arrhenius Laboratory, Stockholm University, 114 18 Stockholm (Sweden); Shen, Zhijian [Berzelii Centre EXSELENT on Porous Materials and Department of Materials and Environmental Chemistry, Arrhenius Laboratory, Stockholm University, 114 18 Stockholm (Sweden); Bjöörn, Dorota, E-mail: dorota.bjoorn@sandvik.com [Sandvik Coromant Sverige AB, Lerkrogsvägen 19, 12680 Stockholm (Sweden)

    2013-11-01

    Understanding of nucleation and growth kinetics of biomimetically deposited hydroxyapatite (HA) on crystalline TiO{sub 2} surfaces is important with respect to the application and performance of HA as functional implant coatings. Arc-evaporation was used to deposit TiO{sub 2} coatings dominated by anatase phase, rutile phase or their mixtures. Subsequent formation of HA from phosphate buffered saline solution (PBS) was investigated in real-time using in situ quartz crystal microbalance with dissipation technique (QCM-D). Scanning electron microscopy (SEM) and X-ray diffraction (XRD) were employed to characterize the presence, morphology and crystal structure of TiO{sub 2} coatings and the formed HA. Increasing temperature of the PBS, increasing flow rate and applying a higher ion concentration in solution were found to accelerate HA nucleation process and hence affect growth kinetics. Lower PBS temperature resulted in the formation of HA coatings with flake-like morphology and increasing HA porosity. All TiO{sub 2} coatings under study enabled HA formation at body temperature, while in contrast Ti reference surfaces only supported HA nucleation and growth at elevated temperatures. QCM-D technique is a powerful tool for studying the impact of process parameters during biomimetic coating deposition on coating structure evolution in real time and provides valuable information for understanding, optimizing as well as tailoring the biomimetic HA growth processes.

  5. Parameters study on the growth of GaAs nanowires on indium tin oxide by metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Dan; Tang, Xiaohong, E-mail: exhtang@ntu.edu.sg, E-mail: wangk@sustc.edu.cn; Li, Xianqiang [OPTIMUS, Photonics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Wang, Kai, E-mail: exhtang@ntu.edu.sg, E-mail: wangk@sustc.edu.cn [Department of Electrical & Electronic Engineering, South University of Science and Technology of China, 1088 Xueyuan Avenue, Shenzhen 518055 (China); Olivier, Aurelien [CINTRA UMI 3288, School of Electrical and Electronic Engineering, Nanyang Technological University, Research Techno Plaza, 50 Nanyang Drive, Border X Block, Level 6, 637553 Singapore (Singapore)

    2016-03-07

    After successful demonstration of GaAs nanowire (NW) epitaxial growth on indium tin oxide (ITO) by metal organic chemical vapor deposition, we systematically investigate the effect of growth parameters' effect on the GaAs NW, including temperature, precursor molar flow rates, growth time, and Au catalyst size. 40 nm induced GaAs NWs are observed with zinc-blende structure. Based on vapor-liquid-solid mechanism, a kinetic model is used to deepen our understanding of the incorporation of growth species and the role of various growth parameters in tuning the GaAs NW growth rate. Thermally activated behavior has been investigated by variation of growth temperature. Activation energies of 40 nm Au catalyst induced NWs are calculated at different trimethylgallium (TMGa) molar flow rates about 65 kJ/mol. The GaAs NWs growth rates increase with TMGa molar flow rates whereas the growth rates are almost independent of growth time. Due to Gibbs-Thomson effect, the GaAs NW growth rates increase with Au nanoparticle size at different temperatures. Critical radius is calculated as 2.14 nm at the growth condition of 430 °C and 1.36 μmol/s TMGa flow rate. It is also proved experimentally that Au nanoparticle below the critical radius such as 2 nm cannot initiate the growth of NWs on ITO. This theoretical and experimental growth parameters investigation enables great controllability over GaAs NWs grown on transparent conductive substrate where the methodology can be expanded to other III–V material NWs and is critical for potential hybrid solar cell application.

  6. Two step growth of high quality long n-GaN:Si nanowires using μ-GaN seed on Si(111) by metalorganic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Min-Hee; Park, Ji-Hyeon; Yoo, Hee-il [Semiconductor Materials and Process Laboratory, School of Advanced Materials Engineering, Research Center for Advanced Materials Development (RCAMD), Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Kissinger, Suthan [Department of General Studies, Physics Group, Jubail University College, Royal Commission for Jubail, Jubail 10074 (Saudi Arabia); Kim, Jin Soo; Baek, Byung June [Semiconductor Materials and Process Laboratory, School of Advanced Materials Engineering, Research Center for Advanced Materials Development (RCAMD), Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Lee, Cheul-Ro, E-mail: crlee7@jbnu.ac.kr [Semiconductor Materials and Process Laboratory, School of Advanced Materials Engineering, Research Center for Advanced Materials Development (RCAMD), Chonbuk National University, Jeonju 561-756 (Korea, Republic of)

    2013-12-02

    A two-step growth method for growing high quality long n-GaN:Si nanowires (NWs) on Si(111) substrates using metalorganic chemical vapor deposition (MOCVD) was developed. In the primary step μ-GaN seeds were grown at 710 °C by pulsed growth method using MOCVD and in the secondary stage, we suitably increased the growth temperature to 950 °C in order to grow the high quality long n-GaN:Si NWs by continuous flow mode. We grew n-GaN:Si NWs at various pairs of μ-GaN seed so as to examine its effect on the growth rate. The density and length of n-GaN:Si NWs were improved with the increase of seeds up to 10 pairs. The number of seed pairs determines the density and length of n-GaN:Si NWs, but they did not affect its diameter directly. Field emission scanning electron microscopy, X-ray diffraction, photoluminescence, cathodoluminescence and high-resolution transmission electron microscopy were used to characterize the specimens. - Highlights: • Long n-GaN:Si nanowires were grown on Si(111). • Metalorganic chemical vapor deposition with two-step process was used. • Initially, μ-GaN seeds were grown at low temperature by pulsed growth method. • The temperature was increased to grow the long nanowires by continuous flow mode. • The effect of μ-GaN seed on the growth rate was examined.

  7. NA-NET numerical analysis net

    Energy Technology Data Exchange (ETDEWEB)

    Dongarra, J. [Tennessee Univ., Knoxville, TN (United States). Dept. of Computer Science]|[Oak Ridge National Lab., TN (United States); Rosener, B. [Tennessee Univ., Knoxville, TN (United States). Dept. of Computer Science

    1991-12-01

    This report describes a facility called NA-NET created to allow numerical analysts (na) an easy method of communicating with one another. The main advantage of the NA-NET is uniformity of addressing. All mail is addressed to the Internet host ``na-net.ornl.gov`` at Oak Ridge National Laboratory. Hence, members of the NA-NET do not need to remember complicated addresses or even where a member is currently located. As long as moving members change their e-mail address in the NA-NET everything works smoothly. The NA-NET system is currently located at Oak Ridge National Laboratory. It is running on the same machine that serves netlib. Netlib is a separate facility that distributes mathematical software via electronic mail. For more information on netlib consult, or send the one-line message ``send index`` to netlib{at}ornl.gov. The following report describes the current NA-NET system from both a user`s perspective and from an implementation perspective. Currently, there are over 2100 members in the NA-NET. An average of 110 mail messages pass through this facility daily.

  8. NA-NET numerical analysis net

    Energy Technology Data Exchange (ETDEWEB)

    Dongarra, J. (Tennessee Univ., Knoxville, TN (United States). Dept. of Computer Science Oak Ridge National Lab., TN (United States)); Rosener, B. (Tennessee Univ., Knoxville, TN (United States). Dept. of Computer Science)

    1991-12-01

    This report describes a facility called NA-NET created to allow numerical analysts (na) an easy method of communicating with one another. The main advantage of the NA-NET is uniformity of addressing. All mail is addressed to the Internet host na-net.ornl.gov'' at Oak Ridge National Laboratory. Hence, members of the NA-NET do not need to remember complicated addresses or even where a member is currently located. As long as moving members change their e-mail address in the NA-NET everything works smoothly. The NA-NET system is currently located at Oak Ridge National Laboratory. It is running on the same machine that serves netlib. Netlib is a separate facility that distributes mathematical software via electronic mail. For more information on netlib consult, or send the one-line message send index'' to netlib{at}ornl.gov. The following report describes the current NA-NET system from both a user's perspective and from an implementation perspective. Currently, there are over 2100 members in the NA-NET. An average of 110 mail messages pass through this facility daily.

  9. Dislocation confinement in the growth of Na flux GaN on metalorganic chemical vapor deposition-GaN

    Science.gov (United States)

    Takeuchi, S.; Asazu, H.; Imanishi, M.; Nakamura, Y.; Imade, M.; Mori, Y.; Sakai, A.

    2015-12-01

    We have demonstrated a GaN growth technique in the Na flux method to confine c-, (a+c)-, and a-type dislocations around the interface between a Na flux GaN crystal and a GaN layer grown by metalorganic chemical vapor deposition (MOCVD) on a (0001) sapphire substrate. Transmission electron microscopy (TEM) clearly revealed detailed interface structures and dislocation behaviors that reduced the density of vertically aligned dislocations threading to the Na flux GaN surface. Submicron-scale voids were formed at the interface above the dislocations with a c component in MOCVD-GaN, while no such voids were formed above the a-type dislocations. The penetration of the dislocations with a c component into Na flux GaN was, in most cases, effectively blocked by the presence of the voids. Although some dislocations with a c component in the MOCVD-GaN penetrated into the Na flux GaN, their propagation direction changed laterally through the voids. On the other hand, the a-type dislocations propagated laterally and collectively near the interface, when these dislocations in the MOCVD-GaN penetrated into the Na flux GaN. These results indicated that the dislocation propagation behavior was highly sensitive to the type of dislocation, but all types of dislocations were confined to within several micrometers region of the Na flux GaN from the interface. The cause of void formation, the role of voids in controlling the dislocation behavior, and the mechanism of lateral and collective dislocation propagation are discussed on the basis of TEM results.

  10. The reverse cholesterol transport pathway improves understanding of genetic networks for fat deposition and muscle growth in beef cattle.

    Directory of Open Access Journals (Sweden)

    Tyler F Daniels

    Full Text Available In the present study, thirteen genes involved in the reverse cholesterol transport (RCT pathway were investigated for their associations with three fat depositions, eight fatty acid compositions and two growth-related phenotypes in a Wagyu x Limousin reference population, including 6 F(1 bulls, 113 F(1 dams, and 246 F(2 progeny. A total of 37 amplicons were used to screen single nucleotide polymorphisms (SNPs on 6 F(1 bulls. Among 36 SNPs detected in 11 of these 13 genes, 19 were selected for genotyping by the Sequenom assay design on all F(2 progeny. Single-marker analysis revealed seven SNPs in ATP binding cassette A1, apolipoproteins A1, B and E, phospholipid transfer protein and paraoxinase 1 genes significantly associated with nine phenotypes (P<0.05. Previously, we reported genetic networks associated with 19 complex phenotypes based on a total of 138 genetic polymorphisms derived from 71 known functional genes. Therefore, after Bonferroni correction, these significant (adjusted P<0.05 and suggestive (adjusted P<0.10 associations were then used to identify genetic networks related to the RCT pathway. Multiple-marker analysis suggested possible genetic networks involving the RCT pathway for kidney-pelvic-heart fat percentage, rib-eye area, and subcutaneous fat depth phenotypes with markers derived from paraoxinase 1, apolipoproteins A1 and E, respectively. The present study confirmed that genes involved in cholesterol homeostasis are useful targets for investigating obesity in humans as well as for improving meat quality phenotypes in a livestock production.

  11. Epitaxial growth of CuScO2 thin films on sapphire a-plane substrates by pulsed laser deposition

    Science.gov (United States)

    Kakehi, Yoshiharu; Satoh, Kazuo; Yotsuya, Tsutom; Nakao, Satoru; Yoshimura, Takeshi; Ashida, Atsushi; Fujimura, Norifumi

    2005-04-01

    An epitaxial film of CuScO2, a transparent oxide semiconductor with a delafossite structure, was grown on an α -Al2O3(112¯0) substrate by a pulsed laser deposition method using a single-phase Cu2Sc2Oδ target. A two-dimensional x-ray reciprocal space mapping measurement revealed that the film was single phase with a rhombohedral crystal structure. The film showed six-fold rotational symmetry in the basal plane, indicating that the film had a twinned domain structure. The epitaxial growth of CuScO2[3R](0001) thin films on α -Al2O3(112¯0) substrates is caused by the uniaxial locked epitaxy mechanism along the ⟨1¯21¯0⟩ direction of the film, and the orientation relationships of the film with respect to the substrate were CuScO2[3R](0001)//α-Al2O3(112¯0) and CuScO2[3R][1¯21¯0]//α-Al2O3[88¯01]. The optical transmittance of the film was larger than 65% in the visible/near-infrared regions, while the energy gap for direct allowed transition was estimated as 3.7 eV. The resistivity of the film, 9.3×106Ωcm at room temperature, significantly decreased to 4.0 Ωcm after both substituting Mg2+ ions for Sc3+ and intercalating excess oxygen. The Mg-doped CuScO2+X(0001) thin film showed optical transmittance of larger than 65% in the visible region, and the Seebeck coefficient was positive, indicating a p-type conductivity.

  12. The growth and characterization of group III-nitride transistor devices grown by metalorganic chemical vapor deposition

    Science.gov (United States)

    Wong, Michael Ming

    The InAlGaN, or III-nitride, material system has received much interest from the research community. A direct wide bandgap semiconductor, GaN offers a high breakdown field (>3 x 106 V/cm) due to its large bandgap energy of 3.4 eV, high electron saturation velocity (1.5 x 10 7 cm/s, predicted peak up to 2.7 x 107 cm/s), good thermal conductivity (≥1.7 W/cm K), and reasonable mobility (800 cm 2/V s). In an AlGaN/GaN heterostructure, the formation of a two-dimensional electron gas (2DEG) leads to a higher electron mobility (2000 cm2/V s) and a high sheet density (1--5 x 1013 cm -2). This makes transistors based on the III-nitride material system ideal for high-temperature, high-power, and high-frequency applications. Two such transistors include the heterojunction field-effect transistor (HFET) and bipolar junction transistor (BJT), which includes the heterojunction bipolar transistor (HBT). Both HFETs and HBTs were studied, and the epitaxial heterostructures were grown by the metalorganic chemical vapor deposition (MOCVD) technique. The MOCVD process and system are described, along with the growth details. As material characterization is important for the optimization of growth, several of the techniques used are discussed. An extensive study to improve the performance of AlGaN/GaN HFETs is detailed. Through the use of a delta-doped, binary barrier novel device structure, the highest reported maximum drain current and transconductance is reported: IDSmax = 1.82 A/mm and gm = 331 mS/mm. The device also exhibits excellent RF characteristics. HBTs based on the III-nitride material system face a more difficult challenge associated with p-type material. Development of HBTs is still in the early stages, although there are reports of working devices. The gain is still below its potential, but many of the issues have been identified. Two novel structures are reported for the first time, a GaN/InGaN/GaN pnp HBT and a AlGaN/GaN npn graded-base and collector-up HBT. The

  13. Self-Catalyzed Growth of Vertical GaSb Nanowires on InAs Stems by Metal-Organic Chemical Vapor Deposition

    Science.gov (United States)

    Ji, Xianghai; Yang, Xiaoguang; Yang, Tao

    2017-06-01

    We report the first self-catalyzed growth of high-quality GaSb nanowires on InAs stems using metal-organic chemical vapor deposition (MOCVD) on Si (111) substrates. To achieve the growth of vertical InAs/GaSb heterostructure nanowires, the two-step flow rates of the trimethylgallium (TMGa) and trimethylantimony (TMSb) are used. We first use relatively low TMGa and TMSb flow rates to preserve the Ga droplets on the thin InAs stems. Then, the flow rates of TMGa and TMSb are increased to enhance the axial growth rate. Because of the slower radial growth rate of GaSb at higher growth temperature, GaSb nanowires grown at 500 °C exhibit larger diameters than those grown at 520 °C. However, with respect to the axial growth, due to the Gibbs-Thomson effect and the reduction in the droplet supersaturation with increasing growth temperature, GaSb nanowires grown at 500 °C are longer than those grown at 520 °C. Detailed transmission electron microscopy (TEM) analyses reveal that the GaSb nanowires have a perfect zinc-blende (ZB) crystal structure. The growth method presented here may be suitable for other antimonide nanowire growth, and the axial InAs/GaSb heterostructure nanowires may have strong potential for use in the fabrication of novel nanowire-based devices and in the study of fundamental quantum physics.

  14. Growth of cubic InN on GaP(1 0 0) with GaN buffer by metalorganic chemical vapour deposition

    Science.gov (United States)

    Kwon, S.-Y.; Sun, Q.; Kwak, J.; Seo, H.-C.; Han, J.

    2011-07-01

    Growth of cubic InN (c-InN) under N-rich condition was achieved by metalorganic chemical vapour deposition on GaP(1 0 0) substrates with a cubic GaN (c-GaN) buffer layer. Insertion of the c-GaN buffer layer suppressed In droplet formation in c-InN. X-ray diffraction and transmission electron microscopy investigations showed that the InN layers have zincblende structure with only a small fraction of oxide phase inclusions and no significant hexagonal InN is present. By systemically varying growth conditions, it was found that the c-InN growth is dominated mainly by In adatoms' surface diffusion and InN surface decomposition and three distinct regimes of c-InN growth are observed. The growth of c-InN on c-GaN/GaP(1 0 0) templates eventually followed a three-dimensional growth mode in the thermally activated growth regime and density and size distribution of c-InN dots significantly changed with substrate temperature and growth rate. These results provide a stronger understanding of the growth mechanism to design and engineer InN-based nanostructures with desired shapes for potential technological applications.

  15. Growth of shape- and size-selective zinc oxide nanorods by a microwave-assisted chemical bath deposition method: effect on photocatalysis properties.

    Science.gov (United States)

    Shinde, Vaishali R; Gujar, Tanaji P; Noda, Takeshi; Fujita, Daisuke; Vinu, Ajayan; Grandcolas, Mathieu; Ye, Jinhua

    2010-09-10

    Herein, we demonstrate the shape- and size-selective growth of ZnO nanostructures on indium tin oxide-coated glass substrates by using a microwave-assisted chemical bath deposition method. By systematically controlling the deposition parameters, it is possible to produce shape- and size-selective nanostructures with high alignment and uniformity. Specifically, the pH of the bath can be used to control the shape of rods from bundled structures to tapered and flat tips. Furthermore, the deposition temperature can be used to control the size of the ZnO array from 770 to 125 nm. The prepared rods were active catalysts in the degradation of methylene blue under UV radiation, and exhibited size-dependent activity.

  16. Tree growth, foliar chemistry, and nitrogen cycling across a nitrogen deposition gradient in southern Appalachian deciduous forests

    Science.gov (United States)

    Johnny L. Boggs; Steven G. McNulty; Michael J. Gavazzi; Jennifer Moore Myers

    2005-01-01

    The declining health of high-elevation red spruce (Picea rubens Sarg.) and Fraser fir (Abies fraseri (Pursh) Poir.) in the southern Appalachian region has long been linked to nitrogen (N)deposition. Recently, N deposition has also been proposed as a source of negative health impacts in lower elevation deciduous forests. In 1998 we...

  17. Changes in conifer and deciduous forest foliar and forest floor chemistry and basal area tree growth across a nitrogen (N) deposition gradient in the northeastern US

    Science.gov (United States)

    Johnny L. Boggs; Steven G. McNulty; Linda H. Pardo

    2007-01-01

    We evaluated foliar and forest floor chemistry across a gradient of N deposition in the Northeast at 11 red spruce (Picea rubens Sarg.) sites in 1987/1988 and foliar and forest floor chemistry and basal area growth at six paired spruce and deciduous sites in 1999. The six red spruce plots were a subset of the original 1987/1988 spruce sites. In 1999...

  18. Size-controlled growth of well-aligned ZnO nanorod arrays with two-step chemical bath deposition method

    OpenAIRE

    Yang, Lili; Zhao,Qingxiang; Willander, Magnus

    2009-01-01

    Well-aligned ZnO nanorod arrays (ZNAs) with different sizes in diameter were fabricated on Si substrates by two-step chemical bath deposition method (CBD), i.e. substrate pre-treatment with spin coating to form ZnO nanoparticles layer and CBD growth. The effects of substrate pre-treatments, pH, angel (θ) between substrate and beaker bottom and growth time (t) on the structure of ZNAs were investigated in detail by X-ray diffraction (XRD), field emission scan electronic microscope (SEM) and ph...

  19. Analysis of the surface photoabsorption signal during self-limited submonolayer growth of InP in metalorganic chemical vapor deposition

    CERN Document Server

    Lee, T W; Moon, Y B; Yoon, E J; Kim, Y D

    1999-01-01

    In situ, real-time monitoring of InP atomic layer epitaxy (ALE) was performed in low-pressure metalorganic chemical vapor deposition (LP-MOCVD) by surface photoabsorption (SPA). A self-limiting adsorption condition was obtained from the trimethylindium (TMIn) decomposition experiment at various conditions. It was found that the growth rate was less than 1 monolayer (ML)/cycle. From the in situ, real-time SPA measurement during InP ALE, the incomplete PH sub 3 decomposition on the methyl-terminated In surface was attributed to the self-limiting submonolayer growth per cycle.

  20. Influence of the oxidation state of SrTiO3 plasmas for stoichiometric growth of pulsed laser deposition films identified by laser induced fluorescence

    Directory of Open Access Journals (Sweden)

    Kasper Orsel

    2015-10-01

    Full Text Available By applying two-dimensional laser induced fluorescence (LIF on multiple plasma constituents, we are able to directly link the oxidation of plasma species in a SrTiO3 plasma for pulsed laser deposition to the stoichiometry and quality of the thin films grown. With spatiotemporal LIF mapping of the plasma species in different background gas compositions, we find that Ti and Sr have to be fully oxidized for a stoichiometric growth of crystalline thin films, which gives new input for modeling surface growth, as well as provides additional control over the exact degree of stoichiometry of thin films.

  1. Net Ecosystem Carbon Flux

    Data.gov (United States)

    U.S. Geological Survey, Department of the Interior — Net Ecosystem Carbon Flux is defined as the year-over-year change in Total Ecosystem Carbon Stock, or the net rate of carbon exchange between an ecosystem and the...

  2. Effect of ambient-level gas-phase peroxides on foliar injury, growth, and net photosynthesis in Japanese radish (Raphanus sativus)

    Energy Technology Data Exchange (ETDEWEB)

    Chen Xuan, E-mail: xuan66chen@yahoo.co.j [Chinese Research Academy of Environmental Science, No.8, Dayangfang, Anwai, Chaoyang District, Beijing 100012 (China); Aoki, Masatoshi [Faculty of Agriculture, Tokyo University of Agriculture and Technology, Saiwaicho 3-5-8, Fuchu-shi, Tokyo 183-8509 (Japan); Takami, Akinori [National Institute for Environmental Studies, Onogawa 16-2, Tsukuba-shi, Ibaraki 305-8506 (Japan); Chai Fahe [Chinese Research Academy of Environmental Science, No.8, Dayangfang, Anwai, Chaoyang District, Beijing 100012 (China); Hatakeyama, Shiro [Faculty of Agriculture, Tokyo University of Agriculture and Technology, Saiwaicho 3-5-8, Fuchu-shi, Tokyo 183-8509 (Japan)

    2010-05-15

    To investigate the effects of ambient-level gas-phase peroxides concurrent with O{sub 3} on foliar injury, photosynthesis, and biomass in herbaceous plants, we exposed Japanese radish (Raphanus sativus) to clean air, 50 ppb O{sub 3}, 100 ppb O{sub 3}, and 2-3 ppb peroxides + 50 ppb O{sub 3} in outdoor chambers. Compared with exposure to 100 ppb O{sub 3}, exposure to 2-3 ppb peroxides + 50 ppb O{sub 3} induced greater damage in foliar injury, net photosynthetic rates and biomass; the pattern of foliar injury and the cause of net photosynthetic rate reduction also differed from those occurring with O{sub 3} exposure alone. These results indicate for the first time that sub-ppb peroxides + 50 ppb O{sub 3} can cause more severe damage to plants than 100 ppb O{sub 3}, and that not only O{sub 3}, but also peroxides, could be contributing to the herbaceous plant damage and forest decline observed in Japan's air-polluted urban and remote mountains areas. - Ambient-level gas-phase peroxides coexisted with 50 ppb O{sub 3} may contribute to the herbaceous plants damage and forest decline observed in Japan.

  3. Surface poisoning in the nucleation and growth of palladium atomic layer deposition with Pd(hfac){sub 2} and formalin

    Energy Technology Data Exchange (ETDEWEB)

    Goldstein, D.N. [Department of Chemistry and Biochemistry, University of Colorado, 215 UCB, Boulder, CO 80309 (United States); George, S.M., E-mail: Steven.George@Colorado.Edu [Department of Chemistry and Biochemistry, University of Colorado, 215 UCB, Boulder, CO 80309 (United States); Department of Chemical and Biological Engineering, University of Colorado, 424 UCB, Boulder, CO (United States)

    2011-06-01

    Palladium (Pd) atomic layer deposition (ALD) can be performed with Pd(hfac){sub 2} (hfac = hexafluoroacetyl-acetone) and formalin as the reactants. For Pd ALD on oxide surfaces, the nucleation of Pd ALD has been observed to require between 20 and 100 ALD cycles. To understand the long nucleation periods, this study explored the surface reactions occurring during Pd ALD nucleation and growth on hydroxylated Al{sub 2}O{sub 3} substrates. In situ Fourier transform infrared (FTIR) spectroscopy on high surface area nanopowders was used to observe the surface species. The adsorption of Pd(hfac){sub 2} on hydroxylated Al{sub 2}O{sub 3} substrates was found to yield both Pd(hfac)* and Al(hfac)* surface species. The identity of the Al(hfac)* species was confirmed by separate FTIR studies of hfacH adsorption on the hydroxylated Al{sub 2}O{sub 3} substrates. Isothermal loss of the Al(hfac)* species revealed second-order kinetics at 448-523 K with an activation barrier of E{sub d} = 39.4 kcal/mol. The lack of correlation between Al(hfac)* and AlOH* species during the loss of Al(hfac)* species suggested that the Al(hfac)* species may desorb as Al(hfac){sub 3}. After Pd(hfac){sub 2} exposure and the subsequent formalin exposure on hydroxylated Al{sub 2}O{sub 3} substrates, only hfac ligands from Pd(hfac)* species were removed from the surface. In addition, the formalin exposure added formate species. The Al(hfac)* species was identified as the cause of the long nucleation period because Al(hfac)* behaves as a site blocker. The surface poisoning by Al(hfac)* species was corroborated by adsorbing hfacH prior to the Pd(hfac){sub 2} exposures. The amount of Pd(hfac)* species after Pd(hfac){sub 2} exposures decreased progressively versus the previous hfacH exposure. Pd ALD occurred gradually during the subsequent Pd ALD cycles as the Al(hfac)* species were slowly removed from the Al{sub 2}O{sub 3} surface. Ex situ transmission electron microscopy analysis revealed Pd nanoclusters

  4. Laser-induced fluorescence analysis of plasmas for epitaxial growth of YBiO3 films with pulsed laser deposition

    National Research Council Canada - National Science Library

    Orsel, K; Groenen, Rik; Bastiaens, Hubertus M.J; Koster, Gertjan; Rijnders, Augustinus J.H.M; Boller, Klaus J

    2016-01-01

    ... the influence of oxygen present in the background gas during pulsed laser deposition to the oxidation of plasma species as well as the formation of epitaxial YBiO 3 films. With spatiotemporal LIF mapping of ...

  5. Direct visualization of initial SEI morphology and growth kinetics during lithium deposition by in situ electrochemical transmission electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Sacci, Robert L. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science adn Technology Division; Dudney, Nancy J. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science adn Technology Division; More, Karren L. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science; Parent, Lucas R. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Fundamental and Computational Sciences Directorate; Arslan, Ilke [Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Fundamental and Computational Sciences Directorate; Browning, Nigel D. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Fundamental and Computational Sciences Directorate; Unocic, Raymond R. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science

    2013-12-20

    Deposition of Li is a major safety concern existing in Li-ion secondary batteries. We perform the first in situ high spatial resolution measurement coupled with real-time quantitative electrochemistry to characterize SEI formation on gold using a standard battery electrolyte. We also demonstrate that a dendritic SEI forms prior to Li deposition and that it remains on the surface after Li electrodissolution.

  6. TRIENNIAL GROWTH AND DEVELOPMENT SYMPOSIUM: Molecular mechanisms related to bovine intramuscular fat deposition in the longissimus muscle.

    Science.gov (United States)

    Baik, M; Kang, H J; Park, S J; Na, S W; Piao, M; Kim, S Y; Fassah, D M; Moon, Y S

    2017-05-01

    The intramuscular fat (IMF) content of the LM, also known as marbling, is particularly important in determining the price of beef in Korea, Japan, and the United States. Deposition of IMF is influenced by both genetic (e.g., breed, gender, and genotype) and nongenetic factors (e.g., castration, nutrition, stressors, animal weight, and age). Castration of bulls markedly increases deposition of IMF, resulting in improved beef quality. Here, we present a comparative gene expression approach between bulls and steers. Transcriptomic and proteomic studies have demonstrated that the combined effects of increases in lipogenesis, fatty acid uptake, and fatty acid esterification and decreased lipolysis are associated with increased IMF deposition in the LM. Several peripheral tissues (LM, adipose tissues, and the liver) are involved in lipid metabolism. Therefore, understanding the significance of the tissue network in lipid metabolism is important. Here, we demonstrate that lipid metabolism in LM tissues is crucial for IMF deposition, whereas lipid metabolism in the liver plays only a minor role. Metabolism of body fat and IMF deposition in bovine species has similarities with these processes in metabolic diseases, such as obesity in humans and rodents. Extensive studies on metabolic diseases using epigenome modification (DNA methylation, histone modification, and microRNA), microbial metagenomics, and metabolomics have been performed in humans and rodents, and new findings have been reported using these technologies. The importance of applying "omics" fields (epigenomics, metagenomics, and metabolomics) to the study of IMF deposition in cattle is described. New information on the molecular mechanisms of IMF deposition may be used to design nutritional or genetic methods to manipulate IMF deposition and to modify fatty acid composition in beef cattle. Applying nutrigenomics could maximize the expression of genetic potential of economically important traits (e.g., marbling

  7. Secondary growth mechanism of SiGe islands deposited on a mixed-phase microcrystalline Si by ion beam co-sputtering

    Science.gov (United States)

    Ke, S. Y.; Yang, J.; Qiu, F.; Wang, Z. Q.; Wang, C.; Yang, Y.

    2015-11-01

    We discuss the SiGe island co-sputtering deposition on a microcrystalline silicon (μc-Si) buffer layer and the secondary island growth based on this pre-SiGe island layer. The growth phenomenon of SiGe islands on crystalline silicon (c-Si) is also investigated for comparison. The pre-SiGe layer grown on μc-Si exhibits a mixed-phase structure, including SiGe islands and amorphous SiGe (a-SiGe) alloy, while the layer deposited on c-Si shows a single-phase island structure. The preferential growth and Ostwald ripening growth are shown to be the secondary growth mechanism of SiGe islands on μc-Si and c-Si, respectively. This difference may result from the effect of amorphous phase Si (AP-Si) in μc-Si on the island growth. In addition, the Si-Ge intermixing behavior of the secondary-grown islands on μc-Si is interpreted by constructing the model of lateral atomic migration, while this behavior on c-Si is ascribed to traditional uphill atomic diffusion. It is found that the aspect ratios of the preferential-grown super islands are higher than those of the Ostwald-ripening ones. The lower lateral growth rate of super islands due to the lower surface energy of AP-Si on the μc-Si buffer layer for the non-wetting of Ge at 700 °C and the stronger Si-Ge intermixing effect at 730 °C may be responsible for this aspect ratio difference.

  8. Note: Influence of rinsing and drying routines on growth of multilayer thin films using automated deposition system.

    Science.gov (United States)

    Gamboa, Daniel; Priolo, Morgan A; Ham, Aaron; Grunlan, Jaime C

    2010-03-01

    A versatile, high speed robot for layer-by-layer deposition of multifunctional thin films, which integrates concepts from previous dipping systems, has been designed with dramatic improvements in software, positioning, rinsing, drying, and waste removal. This system exploits the electrostatic interaction of oppositely charged species to deposit nanolayers (1-10 nm thick) from water onto the surface of a substrate. Dip times and number of deposited layers are adjustable through a graphical user interface. In between dips the system spray rinses and dries the substrate by positioning it in the two-tiered rinse-dry station. This feature significantly reduces processing time and provides the flexibility to choose from four different procedures for rinsing and drying. Assemblies of natural montmorillonite clay and polyethylenimine are deposited onto 175 microm poly(ethylene terephthalate) film to demonstrate the utility of this automated deposition system. By altering the type of rinse-dry procedure, these clay-based assemblies are shown to exhibit variations in film thickness and oxygen transmission rate. This type of system reproducibly deposits films containing 20 or more layers and may also be useful for other types of coatings that make use of dipping.

  9. Professional Enterprise NET

    CERN Document Server

    Arking, Jon

    2010-01-01

    Comprehensive coverage to help experienced .NET developers create flexible, extensible enterprise application code If you're an experienced Microsoft .NET developer, you'll find in this book a road map to the latest enterprise development methodologies. It covers the tools you will use in addition to Visual Studio, including Spring.NET and nUnit, and applies to development with ASP.NET, C#, VB, Office (VBA), and database. You will find comprehensive coverage of the tools and practices that professional .NET developers need to master in order to build enterprise more flexible, testable, and ext

  10. Role of ZnO thin film in the vertically aligned growth of ZnO nanorods by chemical bath deposition

    Science.gov (United States)

    Son, Nguyen Thanh; Noh, Jin-Seo; Park, Sungho

    2016-08-01

    The effect of ZnO thin film on the growth of ZnO nanorods was investigated. ZnO thin films were sputter-deposited on Si substrate with varying the thickness. ZnO nanorods were grown on the thin film using a chemical bath deposition (CBD) method at 90 °C. The ZnO thin films showed granular structure and vertical roughness on the surface, which facilitated the vertical growth of ZnO nanorods. The average grain size and the surface roughness of ZnO film increased with an increase in film thickness, and this led to the increase in both the average diameter and the average length of vertically grown ZnO nanorods. In particular, it was found that the average diameter of ZnO nanorods was very close to the average grain size of ZnO thin film, confirming the role of ZnO film as a seed layer for the vertical growth of ZnO nanorods. The CBD growth on ZnO seed layers may provide a facile route to engineering vertically aligned ZnO nanorod arrays.

  11. Nucleation and initial growth of atomic layer deposited titanium oxide determined by spectroscopic ellipsometry and the effect of pretreatment by surface barrier discharge

    Energy Technology Data Exchange (ETDEWEB)

    Cameron, David C., E-mail: dccameron@mail.muni.cz [R& D Centre for Low-Cost Plasma and Nanotechnology Surface Modification, Masaryk University, Kotlářská 267/2, 611 37 Brno (Czech Republic); Krumpolec, Richard, E-mail: richard.krumpolec@fmph.uniba.sk [Department of Experimental Physics, Faculty of Mathematics, Physics and Informatics, Comenius University, Mlynská dolina, 842 4 Bratislava (Slovakia); Ivanova, Tatiana V., E-mail: tatiana.ivanova@lut.fi [ASTRaL team, Laboratory of Green Chemistry, Lappeenranta University of Technology, Sammonkatu 12, 50130 Mikkeli (Finland); Homola, Tomáš, E-mail: tomas.homola@mail.muni.cz [R& D Centre for Low-Cost Plasma and Nanotechnology Surface Modification, Masaryk University, Kotlářská 267/2, 611 37 Brno (Czech Republic); Černák, Mirko, E-mail: cernak@physics.muni.cz [R& D Centre for Low-Cost Plasma and Nanotechnology Surface Modification, Masaryk University, Kotlářská 267/2, 611 37 Brno (Czech Republic)

    2015-08-01

    Highlights: • Spectroscopic ellipsometry shows initial nucleation and growth process in atomic layer deposited titanium dioxide. • Quantum confinement effects were used to measure evolution of crystallite size. • Crystallite surface density can be extracted from ellipsometric surface roughness data and crystallite size. • Pretreatment of silicon substrates by diffuse coplanar surface barrier discharge has only minor effects on titanium dioxide film nucleation and growth. - Abstract: This paper reports on the use of spectroscopic ellipsometry to characterise the initial nucleation stage of the atomic layer deposition of the anatase phase of titanium dioxide on silicon substrates. Careful control and analysis of the ellipsometric measurements enables the determination of the evolution of crystallite diameter and surface density in the nucleation stage before a continuous film is formed. This growth behaviour is in line with atomic force microscopy measurements of the crystallite size. The crystallite diameter is a linear function of the number of ALD cycles with a slope of approximately 1.7 Å cycle{sup −1} which is equivalent to a layer growth rate of 0.85 Å cycle{sup −1} consistent with a ripening process which increases the crystallite size while reducing their density. The crystallite density decreases from ∼3 × 10{sup 17} m{sup −3} in the initial nucleation stages to ∼3 × 10{sup 15} m{sup −3} before the film becomes continuous. The effect of exposing the substrate to a diffuse coplanar surface barrier discharge in an air atmosphere before deposition was measured and only small differences were found: the plasma treated samples were slightly rougher in the initial stages and required a greater number of cycles to form a continuous film (∼80) compared to the untreated films (∼50). A thicker layer of native oxide was found after plasma treatment.

  12. The influence of charge effect on the growth of hydrogenated amorphous silicon by the hot-wire chemical vapor deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Q.; Nelson, B.P.; Iwaniczko, E.; Mahan, A.H.; Crandall, R.S.; Benner, J. [National Renewable Energy Lab., Golden, CO (United States)

    1998-09-01

    The authors observe at lower substrate temperatures that the scatter in the dark conductivity on hydrogenated amorphous silicon (a-Si:H) films grown on insulating substrates (e.g., Corning 7059 glass) by the hot-wire chemical vapor deposition technique (HWCVD) can be five orders of magnitude or more. This is especially true at deposition temperatures below 350 C. However, when the authors grow the same materials on substrates with a conductive grid, virtually all of their films have acceptable dark conductivity (< 5 {times} 10{sup {minus}10} S/cm) at all deposition temperatures below 425 C. This is in contrast to only about 20% of the materials grown in this same temperature range on insulating substrates having an acceptable dark conductivity. The authors estimated an average energy of 5 eV electrons reaching the growing surface in vacuum, and did additional experiments to see the influence of both the electron flux and the energy of the electrons on the film growth. Although these effects do not seem to be important for growing a-Si:H by HWCVD on conductive substrates, they help better understand the important parameters for a-Si:H growth, and thus, to optimize these parameters in other applications of HWCVD technology.

  13. Growth and electro-optical properties of Ga-doped ZnO films prepared by aerosol assisted chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Shuqun [School of Engineering and Materials Science, Queen Mary University of London, Mile End Road, London E1 4NS (United Kingdom); Carraro, Giorgio [Department of Chemistry and INSTM, Padova University, Padova 35131 (Italy); Barreca, Davide [CNR-IENI and INSTM, Department of Chemistry, Padova University, Padova 35131 (Italy); Binions, Russell [School of Engineering and Materials Science, Queen Mary University of London, Mile End Road, London E1 4NS (United Kingdom)

    2015-06-01

    Transparent conductive Ga-doped ZnO thin films were deposited onto glass substrates by a low-cost aerosol assisted chemical vapour deposition technique and the effect of gallium content on the ZnO film growth behaviour and opto-electronic properties was systematically investigated. It is found that, upon increasing Ga addition, the ZnO film crystallinity exhibits a continuous reduction in quality associated with the preferential orientation transformed from (002) to (102). The (002) oriented samples had a microstructure of parallel columnar grains while the (102) oriented coating was thickened by overlapping particles. The ZnO:Ga coatings exhibit high carrier concentration (up to 4.1 × 10{sup 20} cm{sup −3}) but low carrier mobility (up to 0.8 cm{sup 2} V{sup −1} s{sup −1}), resulting in a minimum resistivity value of 2.3 × 10{sup −2} Ω cm. The inferior carrier mobility performance could result from a profound ionized and neutral impurity scattering effect. Good visible transmittance (≈ 70–80%) is observed in these ZnO:Ga films and samples with higher carrier density present better infrared reflection performance (up to 37.2% at 2500 nm). - Highlights: • Aerosol assisted chemical vapour deposition of doped zinc oxide thin films • Gallium doping and opto-electronic properties systemically investigated • Growth mechanism changed by % gallium incorporation.

  14. Crescimento, teor e composição do óleo essencial de melissa cultivada sob malhas fotoconversoras Growth, content and composition of lemon balm essential oil cultivated under color shading nets

    Directory of Open Access Journals (Sweden)

    Renata da Silva Brant

    2009-08-01

    Full Text Available A utilização de malhas fotoconversoras para o cultivo de algumas espécies ornamentais e olerícolas tornou-se comum. Diante da grande influência que a radiação solar exerce sobre os vegetais, esta pesquisa foi realizada com o objetivo de avaliar o efeito da intensidade e da qualidade espectral da luz transmitida pelas malhas fotoconversoras (Chromatinet® em relação a aspectos fisiológicos de crescimento (teor, rendimento e composição química do óleo essencial de Melissa officinalis L. Em delineamento inteiramente casualizado, foram dispostos quatro tratamentos e cinco repetições, sendo cada parcela composta de quatro vasos (uma planta por vaso. Os tratamentos foram caracterizados por plantas de melissa cultivadas a pleno sol, em malha preta (50%, em malha Chromatinet® vermelha (50% e em Chromatinet® azul (50%. As características avaliadas consistiram em: fitomassa seca de folhas, caules, parte aérea, raízes e total; razão raiz/parte aérea; área foliar total; razão de área foliar; razão de peso foliar; área foliar específica; teor, rendimento e composição química do óleo essencial. A utilização de malhas no cultivo de melissa favoreceu o crescimento, independentemente da cor, em relação ao cultivo a pleno sol. Sob a malha vermelha houve menores teor e rendimento óleo essencial, porém apresentou o maior teor de citral.The use of color shading nets for cultivation of some ornamentals and vegetables has become common. Thus, observing the great influence of the solar radiation on the plant physiology, the objective of this research was to evaluate the the quantity and quality effects of spectral light transmitted through color shading nets (Chromatinet® in Melissa officinalis L., including physiological aspects as:growth ,content and chemistry composition. Four treatments and five replications were disposed in a completely randomized design, being each experimental unit composed by four pots (one plant per pot

  15. Linear antenna microwave plasma CVD diamond deposition at the edge of no-growth region of C-H-O ternary diagram

    Energy Technology Data Exchange (ETDEWEB)

    Potocky, Stepan; Babchenko, Oleg; Hruska, Karel; Kromka, Alexander [Institute of Physics AS CR, v.v.i., Cukrovarnicka 10, 16200 Praha (Czech Republic)

    2012-12-15

    The process parametric window for diamond deposition using the chemical vapor deposition at low pressures is quite limited where addition of oxygen in the gas phase broadens this window. The lower boundary of the lens-shaped domain in C-H-O ternary diagram concurs with the H{sub 2}-CO tie-line (C/(C + O) = 0.5). In this work, we present the set of experiments where the ratio of C/(C + O) was kept at a constant value 0.385. The effect of hydrogen concentration (ratio O/(O + H) varied from 0.047 to 0.364) on plasma characteristics and deposited NCD films were investigated. Raman spectroscopy confirmed the diamond character of all deposited coatings while scanning electron microscopy showed transformation from not closed to continuous film and further decrease of grain size and finally growth of diamond nanowires while decreasing hydrogen concentration in a gas mixture. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. Effect of Different Feeding on Feed Conversion and Growth of Common Carp (Cyprinus carpio in Floating Net Cage Culture at Jatiluhur Dike

    Directory of Open Access Journals (Sweden)

    N.B.P Utomo

    2007-01-01

    Full Text Available This experiment was conducted to evaluate the effectiveness of two feeding methods commonly used in cage culture of carp Cyprinus carpio at Jatiluhur Lake, Purwakarta. Common carp in mean weight of 24.29±4.29 gram were reared in floating net cage 7×7×3 m3, for 70 days rearing.  Fish were fed on a commercial diet containing 30% protein at 5 times daily.  Experimental treatment was feeding technique, i.e., by 6% of body weight, and at satiation for the second treatment.  The results showed that the application of "at satiation feeding method" was more effective than "fixed method" (6% of body weight indicating with food conversion ratio of 1.86 versus 1.91. Production of fish fed on the diet using at satiation method for 70 days was 1,241 kg/cage. Keywords: common carp, Cyprinus carpio, FCR, floating net cage, at satiation   ABSTRAK Salah satu cara untuk menekan biaya dalam usaha budidaya ikan secara intensif adalah dengan penggunaan pakan secera efisien agar ikan tumbuh optimal dan pakan yang terbuang seminimal mungkin. Penelitian dilakukan di Waduk Jatiluhur, Purwakarta.  Ikan mas (Cyprinus carpio ukuran bobot awal rata-rata 24,29±4,29 gram dipelihara dalam jaring apung ukuran 7×7×3 m3, selama 70 hari.  Ikan diberi pakan dengan frekuensi yang sama sebanyak 5 kali/hari. Perlakuan pada penelitian ini adalah teknik pemberian pakan, yaitu ikan pada jaring pertama diberi pakan sebanyak 6% dari bobot biomassa, sementara pada jaring kedua ikan diberi pakan sekenyangnya (at satiation.  Hasil penelitian menunjukkan bahwa pemberian pakan dengan metode sekenyangnya (at satiation menghasilkan nilai FCR sebesar 1,86 yang relatif lebih efisien dibandingkan dengan sebanyak 6% berdasarkan bobot biomassa (1,91. Produktivitas akhir ikan dengan pemberian pakan sekenyangnya 70 hari pemeliharaan dalam jaring apung di waduk Jatiluhur mencapai 1.241 kg. Kata kunci: ikan mas, Cyprinus carpio, FCR, Keramba jaring apung, at satiation

  17. Controllable growth of monolayer MoS2 by chemical vapor deposition via close MoO2 precursor for electrical and optical applications.

    Science.gov (United States)

    Xie, Yong; Wang, Zhan; Zhan, Yongjie; Zhang, Peng; Wu, Ruixue; Jiang, Teng; Wu, Shiwei; Wang, Hong; Zhao, Ying; Nan, Tang; Ma, Xiaohua

    2017-02-24

    MoO2 is used as a new source material for the growth of large area and high optical quality monolayer MoS2. However, a systematic study of the growth parameters is still missing and large-area growth of discreet single crystals is still challenging. Hereby, we report the shape evolution of monolayer growth of MoS2 and develop a methodology to achieve centimeter-scaled discrete MoS2 by adopting MoO2 as Mo source material in an atmospheric-pressure chemical vapor deposition process. Our results indicate the growth of monolayer MoS2 could benefit from the precise control of the introduction time of sulfur and the S/MoO2 ratio in experiments. Micro-Raman and photoluminescence spectra confirm the properties of the material. E-beam lithography was utilized to make contact with the as-grown MoS2 located at the selective area. The electrical properties of MoS2 with different morphologies were compared. In the end, the persistent photoconductivity properties of monolayer MoS2 were emphasized and the underlying mechanism was proposed. These studies demonstrate a better understanding of the growth and application of MoS2-based 2D materials.

  18. Growth and characterization of ZnO films deposited by chemical bath and annealed by microwaves (CBD-A{mu}W)

    Energy Technology Data Exchange (ETDEWEB)

    DIaz-Reyes, J [CIBA-IPN, Ex-Hacienda de San Juan Molino, Km. 1.5, Tepetitla, Tlaxcala, 90700 (Mexico); Martinez-Juarez, J; Garcia, M L; Galeazzi, R [CIDS-ICUAP, BUAP, 14 Sur y San Claudio S/N, CU. Edif. No. 137, Col. San Manuel, Puebla, Puebla 72570 (Mexico); Juarez, G, E-mail: jdiazr2001@yahoo.com [DIE-SEES, CINVESTAV-IPN, A. P. 14-740, Mexico, D. F. 07000 (Mexico)

    2010-06-15

    A study of the growth and the physical properties of ZnO films deposited by chemical bath technique and annealed by microwave are presented. For the deposition solution the molar ratio between zinc nitrate and urea is varied in a range of 1:1... 1:10. By X-ray obtains that layers have hexagonal polycrystalline wurtzite type unitary cell. The Raman spectra show the first order experimental Raman spectra of ZnO. The first order Raman modes are identified in the ZnO Raman spectra. The 300K photoluminescence shows radiative bands labelled by red, yellow, green and violet bands, which are associated to defects of oxygen and zinc vacancies. By EDS measurements determined their stoichiometry, which allows relating it with the intensity of radiative bands associated to oxygen and zinc vacancies.

  19. A structure zone diagram including plasma based deposition and ion etching

    Energy Technology Data Exchange (ETDEWEB)

    Anders, Andre

    2009-10-14

    An extended structure zone diagram is proposed that includes energetic deposition, characterized by a large flux of ions typical for deposition by filtered cathodic arcs and high power impulse magnetron sputtering. The axes are comprised of a generalized homologous temperature, the normalized kinetic energy flux, and the net film thickness, which can be negative due to ion etching. It is stressed that the number of primary physical parameters affecting growth by far exceeds the number of available axes in such a diagram and therefore it can only provide an approximate and simplified illustration of the growth condition?structure relationships.

  20. Effects of Surface Modification of Nanodiamond Particles for Nucleation Enhancement during Its Film Growth by Microwave Plasma Jet Chemical Vapour Deposition Technique

    Directory of Open Access Journals (Sweden)

    Chii-Ruey Lin

    2014-01-01

    Full Text Available The seedings of the substrate with a suspension of nanodiamond particles (NDPs were widely used as nucleation seeds to enhance the growth of nanostructured diamond films. The formation of agglomerates in the suspension of NDPs, however, may have adverse impact on the initial growth period. Therefore, this paper was aimed at the surface modification of the NDPs to enhance the diamond nucleation for the growth of nanocrystalline diamond films which could be used in photovoltaic applications. Hydrogen plasma, thermal, and surfactant treatment techniques were employed to improve the dispersion characteristics of detonation nanodiamond particles in aqueous media. The seeding of silicon substrate was then carried out with an optimized spin-coating method. The results of both Fourier transform infrared spectroscopy and dynamic light scattering measurements demonstrated that plasma treated diamond nanoparticles possessed polar surface functional groups and attained high dispersion in methanol. The nanocrystalline diamond films deposited by microwave plasma jet chemical vapour deposition exhibited extremely fine grain and high smooth surfaces (~6.4 nm rms on the whole film. These results indeed open up a prospect of nanocrystalline diamond films in solar cell applications.

  1. WaveNet

    Science.gov (United States)

    2015-10-30

    Coastal Inlets Research Program WaveNet WaveNet is a web-based, Graphical-User-Interface ( GUI ) data management tool developed for Corps coastal...generates tabular and graphical information for project planning and design documents. The WaveNet is a web-based GUI designed to provide users with a...data from different sources, and employs a combination of Fortran, Python and Matlab codes to process and analyze data for USACE applications

  2. Controlled Growth of Non-Uniform Arsenic Profiles in Silicon Reduced-Pressure Chemical Vapor Deposition Epitaxial Layers

    NARCIS (Netherlands)

    Popadic, M.; Scholtes, T.L.M.; De Boer, W.; Sarubbi, F.; Nanver, L.K.

    2009-01-01

    An empirical model of As surface segregation during reduced-pressure chemical vapor deposition Si epitaxy is presented. This segregation mechanism determines the resulting doping profile in the grown layer and is here described by a model of simultaneous and independent As adsorption and segregation

  3. Features of copper coatings growth at high-rate deposition using magnetron sputtering systems with a liquid metal target

    Czech Academy of Sciences Publication Activity Database

    Bleykher, G.A.; Borduleva, A.O.; Yuryeva, A.V.; Krivobokov, V.P.; Lančok, Ján; Bulíř, Jiří; Drahokoupil, Jan; Klimša, Ladislav; Kopeček, Jaromír; Fekete, Ladislav; Čtvrtlík, Radim; Tomáštík, Jan

    2017-01-01

    Roč. 324, Sep (2017), s. 111-120 ISSN 0257-8972 R&D Projects: GA MŠk LO1409; GA MŠk LM2015088 Institutional support: RVO:68378271 Keywords : magnetron sputtering * evaporation * high-rate coating deposition * coating properties * Cu coatings Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.589, year: 2016

  4. Understanding and Controlling the Aggregative Growth of Platinum Nanoparticles in Atomic Layer Deposition : an Avenue to Size Selection

    NARCIS (Netherlands)

    Grillo, F.; Bui, H.V.; Moulijn, J.A.; Kreutzer, M.T.; van Ommen, J.R.

    2017-01-01

    We present an atomistic understanding of the evolution of the size distribution with temperature and number of cycles in atomic layer deposition (ALD) of Pt nanoparticles (NPs). Atomistic modeling of our experiments teaches us that the NPs grow mostly via NP diffusion and coalescence rather than

  5. Low temperature growth of highly transparent c-axis oriented ZnO thin films by pulsed laser deposition

    NARCIS (Netherlands)

    Amirhaghi, S.; Craciun, V.; Craciun, D.; Elders, J.; Boyd, I.W.

    1994-01-01

    The effects of the oxygen partial pressure, substrate temperature and laser wavelength on the structural and optical properties of thin films of ZnO grown on silicon and glass substrates by pulsed laser deposition have been studied. Regardless of thickness, all the grown layers are c-axis oriented

  6. Effects of laser wavelength and fluence on the growth of ZnO thin films by pulsed laser deposition

    NARCIS (Netherlands)

    Craciun, V.; Amirhaghi, S.; Craciun, D.; Elders, J.; Gardeniers, Johannes G.E.; Boyd, Ian W.

    Transparent, electrically conductive and c-axis oriented ZnO thin films have been grown by the pulsed laser deposition (PLD) technique on silicon and Corning glass substrates employing either a KrF excimer laser (λ = 248 nm) or a frequency-doubled Nd:YAG laser (λ = 532 nm). The crystalline

  7. Patterned growth of luminescent metal-organic framework films: a versatile electrochemically-assisted microwave deposition method.

    Science.gov (United States)

    Li, Wei-Jin; Feng, Ji-Fei; Lin, Zu-Jin; Yang, Ying-Long; Yang, Yan; Wang, Xu-Sheng; Gao, Shui-Ying; Cao, Rong

    2016-03-11

    Electrochemically-assisted microwave deposition technology, a facile method for the fabrication of luminescent metal-organic framework (LMOF) films, is presented herein. This method was further developed into a versatile method for preparing patterned LMOF films. The strategy based on this method can spatially locate microcrystals of MOFs on a surface, which provides great promise in anti-counterfeiting barcode applications.

  8. Crystalline phase control and growth selectivity of β-MnO{sub 2} thin films by remote plasma assisted pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Abi-Akl, M.; Tabbal, M., E-mail: malek.tabbal@aub.edu.lb; Kassem, W.

    2016-08-01

    In this paper, we exploit the effect of coupling an oxygen remote plasma source to Pulsed Laser Deposition (PLD) for the growth of pure and well crystallized β-MnO{sub 2} films. Films were grown on Si substrates by laser ablation of a MnO target in oxygen ambient and remote plasma. X-Ray Diffraction, Fourier Transform Infra-Red spectroscopy and Raman scattering were used to determine the crystalline structure and bonding in the grown layers, whereas Atomic Force Microscopy was used to study their morphology and surface roughness. Deposition at 500 °C and high oxygen pressure (33.3–66.6 Pa) resulted in the formation of films with roughness of 12 nm consisting of nsutite γ-MnO{sub 2}, a structure characterized by the intergrowth of the pyrolusite β-MnO{sub 2} in a ramsdellite R-MnO{sub 2} matrix. Deposition at the same temperature but low pressure (1.33–3.33 Pa) in oxygen ambient lead to the formation of Mn{sub 2}O{sub 3} whereas plasma activation within the same pressure range induced the growth of single phase highly crystalline β-MnO{sub 2} having smooth surfaces with a roughness value of 0.6 nm. Such results underline the capability of remote plasma assisted PLD in selecting and controlling the crystalline phase of manganese oxide layers. - Highlights: • MnO{sub 2} films were grown by Remote Plasma Assisted Pulsed Laser Deposition. • Crystalline MnO{sub 2} is formed at a substrate temperature of 500 °C. • Smooth crystalline single phase β-MnO{sub 2} films were obtained at 1.33–3.33 Pa. • Deposition at 1.33–3.33 Pa without plasma activation lead to the growth of Mn{sub 2}O{sub 3}. • Without plasma, mixed phases of MnO{sub 2} polymorphs are obtained at 33.3 Pa and above.

  9. Coloured Petri Nets

    DEFF Research Database (Denmark)

    Jensen, Kurt

    1991-01-01

    This paper describes how Coloured Petri Nets (CP-nets) have been developed — from being a promising theoretical model to being a full-fledged language for the design, specification, simulation, validation and implementation of large software systems (and other systems in which human beings and...... use of CP-nets — because it means that the function representation and the translations (which are a bit mathematically complex) no longer are parts of the basic definition of CP-nets. Instead they are parts of the invariant method (which anyway demands considerable mathematical skills...

  10. Game Coloured Petri Nets

    DEFF Research Database (Denmark)

    Westergaard, Michael

    2006-01-01

    This paper introduces the notion of game coloured Petri nets. This allows the modeler to explicitly model what parts of the model comprise the modeled system and what parts are the environment of the modeled system. We give the formal definition of game coloured Petri nets, a means of reachability...... analysis of this net class, and an application of game coloured Petri nets to automatically generate easy-to-understand visualizations of the model by exploiting the knowledge that some parts of the model are not interesting from a visualization perspective (i.e. they are part of the environment...

  11. Programming NET Web Services

    CERN Document Server

    Ferrara, Alex

    2007-01-01

    Web services are poised to become a key technology for a wide range of Internet-enabled applications, spanning everything from straight B2B systems to mobile devices and proprietary in-house software. While there are several tools and platforms that can be used for building web services, developers are finding a powerful tool in Microsoft's .NET Framework and Visual Studio .NET. Designed from scratch to support the development of web services, the .NET Framework simplifies the process--programmers find that tasks that took an hour using the SOAP Toolkit take just minutes. Programming .NET

  12. Annotating Coloured Petri Nets

    DEFF Research Database (Denmark)

    Lindstrøm, Bo; Wells, Lisa Marie

    2002-01-01

    -net. An example of such auxiliary information is a counter which is associated with a token to be able to do performance analysis. Modifying colour sets and arc inscriptions in a CP-net to support a specific use may lead to creation of several slightly different CP-nets – only to support the different uses...... a method which makes it possible to associate auxiliary information, called annotations, with tokens without modifying the colour sets of the CP-net. Annotations are pieces of information that are not essential for determining the behaviour of the system being modelled, but are rather added to support...

  13. Comparison of growth and efficiency of dietary energy utilization by growing pigs offered feeding programs based on the metabolizable energy or the net energy system.

    Science.gov (United States)

    Acosta, J; Patience, J F; Boyd, R D

    2016-04-01

    The NE system describes the useful energy available for growth better than the ME system. The use of NE in diet formulation should maintain growth performance and carcass parameters when diets contain a diversity of ingredients. This study compared the growth performance of pigs on diets formulated using either the ME or the NE system. A total of 944 gilts and 1,110 castrates (40.8 ± 2.0 kg initial BW) were allotted to group pens and assigned to 1 of 5 different feeding programs according to a randomized complete block design. The 5 treatments included: a corn-soybean meal control diet (CTL), a corn-soybean meal diet plus corn distiller's dried grains with solubles (DDGS), formulated to be equal in ME to the CTL diet (ME-D), a corn-soybean meal diet plus corn DDGS, formulated to be equal in NE to the CTL diet (NE-D), a corn-soybean meal diet plus corn DDGS and corn germ meal, to be equal in ME to the CTL diet (ME-DC) and a corn-soybean meal diet plus corn DDGS and corn germ meal, formulated to be equal in NE to the CTL diet (NE-DC). When required, fat was added as an energy source. Pigs were harvested at an average BW of 130.3 ± 4.0 kg. Growth performance was not affected by treatment ( = 0.581, = 0. 177, and = 0.187 for ADG, ADFI, and G:F, respectively). However, carcass growth decreased with the addition of coproducts except for the NE-D treatment ( = 0.016, = 0.001, = 0.018, = 0.010, and = 0.010 for dressing percentage, HCW, carcass ADG, back fat, and loin depth, respectively). Carcass G:F and lean percentage did not differ among treatments ( = 0.109 and = 0.433, respectively). On the other hand, NE intake decreased ( = 0.035) similarly to that of carcass gain, suggesting a relationship between NE intake and energy retention. Calculations of NE per kilogram of BW gain differed among treatments ( = 0.010), but NE per kilogram of carcass was similar among treatments ( = 0.640). This suggests that NE may be better than ME at explaining the carcass results

  14. Unveiling the Concentration-Dependent Grain Growth of Perovskite Films from One- and Two-Step Deposition Methods: Implications for Photovoltaic Application.

    Science.gov (United States)

    Lewis, Alison E; Zhang, Yi; Gao, Peng; Nazeeruddin, Mohammad Khaja

    2017-08-02

    In order to achieve high-efficiency perovskite solar cells, understanding both the crystal structure and the optoelectronic properties of perovskite layers is of importance. This paper uses crystallization analysis and the modeling study of two different perovskite deposition methods (two- and one-step methods) and thereby shows that the one-step method embodies a film formation process that is dominated by crystal growth, while the dominant mechanism of the two-step procedure is nucleation. Our data based on experimental and theory shows that the one-step recipe is superior in terms of morphology control, and, hence, reproducibility, compared to the two-step recipe.

  15. High retention of 15N-labeled nitrogen deposition in a nitrogen saturated old-growth tropical forest

    DEFF Research Database (Denmark)

    Gurmesa, Geshere Abdisa; Lu, Xiankai; Gundersen, Per

    2016-01-01

    The effects of increased reactive nitrogen (N) deposition in forests depend largely on its fate in the ecosystems. However, our knowledge on the fates of deposited N in tropical forest ecosystems and its retention mechanisms is limited. Here, we report the results from the first whole ecosystem (15...... ecosystem compartments were quantified 4 months after the last addition. Tracer recoveries in soil solution were monitored monthly to quantify leaching losses. Total tracer recovery in plant and soil (N retention) in the control plots was 72% and similar to those observed in temperate forests. The retention...... decreased to 52% in the N-plots. Soil was the dominant sink, retaining 37% and 28% of the labeled N input in the control and N-plots, respectively. Leaching below 20 cm was 50 kg N ha(-1) yr(-1) in the control plots and was close to the N input (51 kg N ha(-1) yr(-1) ), indicating N saturation of the top...

  16. Growth and characterization of V{sub 2}O{sub 5} nanorods deposited by spray pyrolysis at low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Abd-Alghafour, N. M., E-mail: na2013bil@gmail.com; Ahmed, Naser M., E-mail: nas-tiji@yahoo.com; Hassan, Zai. [Iraqi Ministry of Education, Anbar-Iraq (Iraq); Mohammad, Sabah M. [Nano-Optoelectronics Research and Technology Laboratory School of Physics, university sains Malaysia, 11800 Penang (Malaysia); Bououdina, M. [Nanotechnology Centre, University of Bahrain, PO Box 32038, Kingdom of Bahrain Department of Physics, College of Science, University of Bahrain, PO Box 32038, Kingdom of Bahrain, Iraqi Ministry of Education (Bahrain)

    2016-07-06

    Vanadium pentoxide (V{sub 2}O{sub 5}) nanorods were deposited by spray pyrolysis on preheated glass substrates at low temperatures. The influence of substrate temperature on the crystallization of V{sub 2}O{sub 5} has been investigated. X-ray diffraction analysis (XRD) revealed that the films deposited at T{sub sub} = 300°C were orthorhombic structures with preferential along (001) direction. Formation of nanorods from substrate surface which led to the formation of films with small-sized and rod-shaped nanostructure is observed by field scanning electron microscopy. Optical transmittance in the visible range increases to reach a maximum value of about 80% for a substrate temperature of 350°C. PL spectra reveal one main broad peak centered around 540 nm with high intensity.

  17. Ga N nano wires and nano tubes growth by chemical vapor deposition method at different NH{sub 3} flow rate

    Energy Technology Data Exchange (ETDEWEB)

    Li, P.; Liu, Y.; Meng, X. [Wuhan University, School of Physics and Technology, Key Laboratory of Artificial Micro and Nanostructures of Ministry of Education, Wuhan 430072 (China)

    2016-11-01

    Ga N nano wires and nano tubes have been successfully synthesized via the simple chemical vapor deposition method. NH{sub 3} flow rate was found to be a crucial factor in the synthesis of different type of Ga N which affects the shape and the diameter of generated Ga N nano structures. X-ray diffraction confirms that Ga N nano wires grown on Si(111) substrate under 900 degrees Celsius and with NH{sub 3} flow rate of 50 sc cm presents the preferred orientation growth in the (002) direction. It is beneficial to the growth of nano structure through catalyst annealing. Transmission electron microscopy and scanning electron microscopy were used to measure the size and structures of the samples. (Author)

  18. Highly textured Gd2Zr2O7 films grown on textured Ni-5 at.%W substrates by solution deposition route: Growth, texture evolution, and microstructure dependency

    DEFF Research Database (Denmark)

    Yue, Zhao; Grivel, Jean-Claude; Napari, M.

    2012-01-01

    or crystallization in the thicker films. This work not only demonstrates a route for producing textured Gd2Zr2O7 buffer layers with dense structure directly on technical substrates, but also provides some fundamental understandings related to chemical solution derived films grown on metallic substrates.......Growth, texture evolution and microstructure dependency of solution derived Gd2Zr2O7 films deposited on textured Ni-5 at.%W substrates have been extensively studied. Influence of processing parameters, in particular annealing temperature and dwell time, as well as thickness effect on film texture...... the difference of interfacial energy along two directions in the anisotropic metallic substrate. Growth of Gd2Zr2O7 films displays an ultrafast kinetics under optimized conditions. Independency of sharp epitaxial (004) and polycrystalline (222) orientation is revealed from further synchrotron diffraction studies...

  19. Copper-Assisted Direct Growth of Vertical Graphene Nanosheets on Glass Substrates by Low-Temperature Plasma-Enhanced Chemical Vapour Deposition Process.

    Science.gov (United States)

    Ma, Yifei; Jang, Haegyu; Kim, Sun Jung; Pang, Changhyun; Chae, Heeyeop

    2015-12-01

    Vertical graphene (VG) nanosheets are directly grown below 500 °C on glass substrates by a one-step copper-assisted plasma-enhanced chemical vapour deposition (PECVD) process. A piece of copper foil is located around a glass substrate as a catalyst in the process. The effect of the copper catalyst on the vertical graphene is evaluated in terms of film morphology, growth rate, carbon density in the plasma and film resistance. The growth rate of the vertical graphene is enhanced by a factor of 5.6 with the copper catalyst with denser vertical graphene. The analysis of optical emission spectra suggests that the carbon radical density is increased with the copper catalyst. Highly conductive VG films having 800 Ω/□ are grown on glass substrates with Cu catalyst at a relatively low temperature.

  20. Net zero water

    CSIR Research Space (South Africa)

    Lindeque, M

    2013-01-01

    Full Text Available Is it possible to develop a building that uses a net zero amount of water? In recent years it has become evident that it is possible to have buildings that use a net zero amount of electricity. This is possible when the building is taken off...

  1. SolNet

    DEFF Research Database (Denmark)

    Jordan, Ulrike; Vajen, Klaus; Bales, Chris

    2014-01-01

    SolNet, founded in 2006, is the first coordinated International PhD education program on Solar Thermal Engineering. The SolNet network is coordinated by the Institute of Thermal Engineering at Kassel University, Germany. The network offers PhD courses on solar heating and cooling, conference...

  2. Kunstige neurale net

    DEFF Research Database (Denmark)

    Hørning, Annette

    1994-01-01

    Artiklen beskæftiger sig med muligheden for at anvende kunstige neurale net i forbindelse med datamatisk procession af naturligt sprog, specielt automatisk talegenkendelse.......Artiklen beskæftiger sig med muligheden for at anvende kunstige neurale net i forbindelse med datamatisk procession af naturligt sprog, specielt automatisk talegenkendelse....

  3. Leidenfrost temperature related CVD-like growth mechanism in ZnO-TFTs deposited by pulsed spray pyrolysis

    Science.gov (United States)

    Ortel, Marlis; Wagner, Veit

    2013-01-01

    Zinc oxide thin films were prepared by pulsed spray pyrolysis (SP) from aqueous zinc acetate precursor solution. The deposition behavior of the solution with regard to the pool boiling curve of the solvent was investigated to gain insights of the deposition mechanism which leads to homogeneous and reproducible ZnO layers. The Leidenfrost effect was found to play an important role since the Leidenfrost temperature has to be exceeded to form high quality layers. It is concluded that 3D nucleation of ZnO nano-crystals takes place out of the gaseous phase by a CVD-like process on ITO as well as on SiO2 substrates. Crystal orientation and surface roughness of the zinc oxide layer are found to depend strongly on the substrate. An increasing grain size with film thickness is observed. These findings were utilized to fabricate and investigate the semiconducting properties of the films in ZnO thin film transistors (TFTs). The mobility exceeded 12 cm2 V-1 s-1, the on-set was at 1 V and the on-off current ratio was found to be higher than 108. Hence the morphology and the electrical parameters of the ZnO films deposited by pulsed spray pyrolysis from non-toxic aqueous zinc acetate solution above the Leidenfrost point show excellent properties for electronic applications.

  4. FINEMET-type thin films deposited by HiPIMS: Influence of growth and annealing conditions on the magnetic behaviour

    Energy Technology Data Exchange (ETDEWEB)

    Velicu, Ioana-Laura [Faculty of Physics, Alexandru Ioan Cuza University, 700506 Iasi (Romania); Kowalczyk, Maciej [Faculty of Materials Science and Engineering, Warsaw University of Technology, 05-507 Warszawa (Poland); Neagu, Maria, E-mail: mneagu@uaic.ro [Faculty of Physics, Alexandru Ioan Cuza University, 700506 Iasi (Romania); Tiron, Vasile [Faculty of Physics, Alexandru Ioan Cuza University, 700506 Iasi (Romania); Chiriac, Horia [National Institute of Research and Development for Technical Physics, 700050 Iasi (Romania); Ferenc, Jarosław [Faculty of Materials Science and Engineering, Warsaw University of Technology, 05-507 Warszawa (Poland)

    2013-11-20

    Results concerning the influence of deposition conditions (effective power, P{sub eff}, pulse length, τ, and working gas pressure, p) as well as of thermal treatments on the properties of Fe{sub 73.5}Cu{sub 1}Nb{sub 3}Si{sub 15.5}B{sub 7} thin films, deposited by high power impulse magnetron sputtering (HiPIMS) technique, are presented. The P{sub eff}, τ and p values were varied in the range of 30–90 W, 4–20 μs and 8–60 mTorr respectively. According to the XRD analysis, in as-deposited state, all the prepared samples are amorphous. For P{sub eff} constant the coercive magnetic field, H{sub c}, increases whit τ, while for τ constant H{sub c} decreases when P{sub eff} increases. The lowest H{sub c} values have been obtained after the samples were annealed at temperatures between 450 °C and 480 °C, when the average size of the α-Fe(Si) grains and the crystalline volume fraction increase about 45% and 20% respectively.

  5. The effect of deposition energy of energetic atoms on the growth and structure of ultrathin amorphous carbon films studied by molecular dynamics simulations

    KAUST Repository

    Wang, N

    2014-05-16

    The growth and structure of ultrathin amorphous carbon films was investigated by molecular dynamics simulations. The second-generation reactive-empirical-bond-order potential was used to model atomic interactions. Films with different structures were simulated by varying the deposition energy of carbon atoms in the range of 1-120 eV. Intrinsic film characteristics (e.g. density and internal stress) were determined after the system reached equilibrium. Short- and intermediate-range carbon atom ordering is examined in the context of atomic hybridization and ring connectivity simulation results. It is shown that relatively high deposition energy (i.e., 80 eV) yields a multilayer film structure consisting of an intermixing layer, bulk film and surface layer, consistent with the classical subplantation model. The highest film density (3.3 g cm-3), sp3 fraction (∼43%), and intermediate-range carbon atom ordering correspond to a deposition energy of ∼80 eV, which is in good agreement with experimental findings. © 2014 IOP Publishing Ltd.

  6. The effect of ZnO nanorod growth duration by hydrothermal deposition method to the photovoltaic properties

    Science.gov (United States)

    Ali, Engku Abd Ghapur Engku; Rezali, Roslinda

    2012-11-01

    In this study, the effect of time in hydrothermal method to the growth of ZnO nanorods at low temperature was investigated. The substrate is prepared through three stages which are the seeding stage, the growth stage and the dye sensitized stage. The morphology of the ZnO growth was measured using the Scanning Electron Microscope (SEM). Efficiency was verified by the growth duration of 2, 4 and 8 hours. The current and voltage of the thin films were measured by using two point probes under dark and different light intensity of 10, 20, 50 and 100 Wm-2. The efficiency under light intensity was increased with increasing growth duration. Growth duration of 8 hours combined with Bis(2,2'-bipyridine)-4,4'-dicarboxybipyridine-ruthenium di(N-succinimidyl ester) bis(hexafluorophosphate) and 1-butyl-2,3-dimethylimidazolium chloride thin films on indium tin oxide (ITO) thin films are suitable to increase the efficiency of the device under 100 W/m2 intensity of light which is 1.2 7%.

  7. Growth of nanocrystalline TiO2 films by pulsed-laser-induced liquid-deposition method and preliminary applications for dye-sensitized solar cells

    Science.gov (United States)

    Wang, Guo-Bing; Fu, Min-Gong; Lu, Bin; Du, Guo-Ping; Li, Li; Qin, Xiao-Mei; Shi, Wang-Zhou

    2010-09-01

    A novel technique, the pulsed-laser-induced liquid-deposition (PLLD) method, has been employed to grow nanocrystalline TiO2 films on fluorine-doped tin-oxide-coated (FTO) glass substrates at room temperature. The PLLD method was implemented by directing a pulsed laser into a liquid precursor and depositing the photosynthesized nanocrystalline TiO2 on an FTO glass substrate immersed in the liquid precursor. The as-grown nanocrystalline TiO2 films were found to have a rutile crystal structure and consist of a number of flower-like TiO2 crystal units arrayed together on the FTO glass substrate. Each of the flower-like TiO2 crystal units was composed of many nanostructured TiO2 whiskers, and their building blocks were found to be bundles of TiO2 nanorods with diameter of about 5 nm. The growth of these TiO2 nanorods is highly anisotropic, with the preferential growth direction along [001]. As-grown nanocrystalline TiO2 films were annealed at 450°C in air for 30 min for the applications of dye-sensitized solar cells, and the nanostructured characteristics with good porosity were preserved after annealing. A preliminary dye-sensitized solar cell was built based on the annealed nanocrystalline TiO2 film. The results suggest that the PLLD method is a promising technique for growing nanocrystalline TiO2 films for photovoltaic applications.

  8. Signalling requirements for Erwinia amylovora-induced disease resistance, callose deposition and cell growth in the non-host Arabidopsis thaliana.

    Science.gov (United States)

    Hamdoun, Safae; Gao, Min; Gill, Manroop; Kwon, Ashley; Norelli, John L; Lu, Hua

    2017-07-29

    Erwinia amylovora is the causal agent of the fire blight disease in some plants of the Rosaceae family. The non-host plant Arabidopsis serves as a powerful system for the dissection of mechanisms of resistance to E. amylovora. Although not yet known to mount gene-for-gene resistance to E. amylovora, we found that Arabidopsis activated strong defence signalling mediated by salicylic acid (SA), with kinetics and amplitude similar to that induced by the recognition of the bacterial effector avrRpm1 by the resistance protein RPM1. Genetic analysis further revealed that SA signalling, but not signalling mediated by ethylene (ET) and jasmonic acid (JA), is required for E. amylovora resistance. Erwinia amylovora induces massive callose deposition on infected leaves, which is independent of SA, ET and JA signalling and is necessary for E. amylovora resistance in Arabidopsis. We also observed tumour-like growths on E. amylovora-infected Arabidopsis leaves, which contain enlarged mesophyll cells with increased DNA content and are probably a result of endoreplication. The formation of such growths is largely independent of SA signalling and some E. amylovora effectors. Together, our data reveal signalling requirements for E. amylovora-induced disease resistance, callose deposition and cell fate change in the non-host plant Arabidopsis. Knowledge from this study could facilitate a better understanding of the mechanisms of host defence against E. amylovora and eventually improve host resistance to the pathogen. © 2017 BSPP AND JOHN WILEY & SONS LTD.

  9. A study of the effects of aligned vertically growth time on ZnO nanorods deposited for the first time on Teflon substrate

    Science.gov (United States)

    Farhat, O. F.; Halim, M. M.; Ahmed, Naser M.; Oglat, Ammar A.; Abuelsamen, A. A.; Bououdina, M.; Qaeed, M. A.

    2017-12-01

    In this study, ZnO nanorods (NRs) were well deposited on Teflon substrates (PTFE) via a chemical bath deposition (CBD) method at low temperature. The consequences of growth time (1 h-4 h) on the structural and optical properties of the aligned ZnO (NRs) were investigated through X-ray diffraction, field-emission scanning electron microscopy (FESEM), and photoluminescence (PL) analyses. The results show that the ZnO (NRs) were preferred to grew aligned along the c-axis as hexagonal wurtzite structure as proved by the sharp and strong ZnO (002) peaks of the ZnO (NRs). Irrespective of the growth continuation, FESEM photos confirmed that the ZnO nanorods arrays were fit to be aligned along the c-axis and perpendicular to (PTFE) substrates. The ZnO nanorods that exhibited the sharper stand most intense PL peaks among the sample were grown for 3hs as demonstrated by PL spectra. The device further showed a sensitivity of 4068 to low-power (1.25 mW/cm2) 375 nm light pulses without an external bias. The measurements of photoresponse demonstrated the highly reproducible characteristics of the fabricated UV detector with rapid response and baseline recovery times of 48.05 ms. Thus, this work introduced a simple, low-cost method of fabricating rapid-response, and highly photosensitive UV detectors with zero power consumption on Teflon substrates.

  10. Planning long lasting insecticide treated net campaigns: should households' existing nets be taken into account?

    Science.gov (United States)

    Yukich, Joshua; Bennett, Adam; Keating, Joseph; Yukich, Rudy K; Lynch, Matt; Eisele, Thomas P; Kolaczinski, Kate

    2013-06-14

    Mass distribution of long-lasting insecticide treated bed nets (LLINs) has led to large increases in LLIN coverage in many African countries. As LLIN ownership levels increase, planners of future mass distributions face the challenge of deciding whether to ignore the nets already owned by households or to take these into account and attempt to target individuals or households without nets. Taking existing nets into account would reduce commodity costs but require more sophisticated, and potentially more costly, distribution procedures. The decision may also have implications for the average age of nets in use and therefore on the maintenance of universal LLIN coverage over time. A stochastic simulation model based on the NetCALC algorithm was used to determine the scenarios under which it would be cost saving to take existing nets into account, and the potential effects of doing so on the age profile of LLINs owned. The model accounted for variability in timing of distributions, concomitant use of continuous distribution systems, population growth, sampling error in pre-campaign coverage surveys, variable net 'decay' parameters and other factors including the feasibility and accuracy of identifying existing nets in the field. Results indicate that (i) where pre-campaign coverage is around 40% (of households owning at least 1 LLIN), accounting for existing nets in the campaign will have little effect on the mean age of the net population and (ii) even at pre-campaign coverage levels above 40%, an approach that reduces LLIN distribution requirements by taking existing nets into account may have only a small chance of being cost-saving overall, depending largely on the feasibility of identifying nets in the field. Based on existing literature the epidemiological implications of such a strategy is likely to vary by transmission setting, and the risks of leaving older nets in the field when accounting for existing nets must be considered. Where pre-campaign coverage

  11. Planning long lasting insecticide treated net campaigns: should households’ existing nets be taken into account?

    Science.gov (United States)

    2013-01-01

    Background Mass distribution of long-lasting insecticide treated bed nets (LLINs) has led to large increases in LLIN coverage in many African countries. As LLIN ownership levels increase, planners of future mass distributions face the challenge of deciding whether to ignore the nets already owned by households or to take these into account and attempt to target individuals or households without nets. Taking existing nets into account would reduce commodity costs but require more sophisticated, and potentially more costly, distribution procedures. The decision may also have implications for the average age of nets in use and therefore on the maintenance of universal LLIN coverage over time. Methods A stochastic simulation model based on the NetCALC algorithm was used to determine the scenarios under which it would be cost saving to take existing nets into account, and the potential effects of doing so on the age profile of LLINs owned. The model accounted for variability in timing of distributions, concomitant use of continuous distribution systems, population growth, sampling error in pre-campaign coverage surveys, variable net ‘decay’ parameters and other factors including the feasibility and accuracy of identifying existing nets in the field. Results Results indicate that (i) where pre-campaign coverage is around 40% (of households owning at least 1 LLIN), accounting for existing nets in the campaign will have little effect on the mean age of the net population and (ii) even at pre-campaign coverage levels above 40%, an approach that reduces LLIN distribution requirements by taking existing nets into account may have only a small chance of being cost-saving overall, depending largely on the feasibility of identifying nets in the field. Based on existing literature the epidemiological implications of such a strategy is likely to vary by transmission setting, and the risks of leaving older nets in the field when accounting for existing nets must be considered

  12. EVALUATION OF FISH FAUNA STOCKS IN DAMS IN SOSSEGO MIME IN CANAÃ OF CARAJÁS (EASTERN AMAZON, CAPTURED WITH THE USE OF CAST NET BEFORE THE DEPOSIT OF TAILINGS

    Directory of Open Access Journals (Sweden)

    Ivan Furtado Junior

    2016-12-01

    Full Text Available This study aims to estimate the biomass of fish stocks in the area of the dam formed by tailings of Sossego mine in Canaã dos Carajás, captured with the use of cast nets for fish. The prospecting work was carried out during the period from 29 February to 6 March 2004, 6 months after closing the dam and immediately before the disposal of waste. The average values estimated for the capture per unit area covered by cast nets (CPUA and biomass were 8.4 g m-² and 16,922.7 kg, respectively. The most representative groups of fish were minnows, with 67.7% and discus with 24.8% of the total estimated biomass. The species caught were: Moenkhausia cf. sanctaefilomenae (redeye tetra fish, Tetragonopterus cf. argenteus (white tetra fish, Tetragonopterus chalceus (red tetra fish, Aequidens viridis (cichlasoma bimaculatum Crenicichla cincta (jacunda Hoplerythrinus unitaeniatus (jeju Curimata inornata (branquinha and Hoplias malabaricus (trahira. Keywords: fishing survey; yield per unit area; biomass; tailings dam.

  13. Effect of Growth Pressure on Epitaxial Graphene Grown on 4H-SiC Substrates by Using Ethene Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Shuxian Cai

    2015-08-01

    Full Text Available The Si(0001 face and C(000-1 face dependences on growth pressure of epitaxial graphene (EG grown on 4H-SiC substrates by ethene chemical vapor deposition (CVD was studied using atomic force microscopy (AFM and micro-Raman spectroscopy (μ-Raman. AFM revealed that EGs on Si-faced substrates had clear stepped morphologies due to surface step bunching. However, This EG formation did not occur on C-faced substrates. It was shown by μ-Raman that the properties of EG on both polar faces were different. EGs on Si-faced substrates were relatively thinner and more uniform than on C-faced substrates at low growth pressure. On the other hand, D band related defects always appeared in EGs on Si-faced substrates, but they did not appear in EG on C-faced substrate at an appropriate growth pressure. This was due to the μ-Raman covering the step edges when measurements were performed on Si-faced substrates. The results of this study are useful for optimized growth of EG on polar surfaces of SiC substrates.

  14. Atmospheric-pressure plasma-enhanced chemical vapor deposition of a-SiCN:H films: role of precursors on the film growth and properties.

    Science.gov (United States)

    Guruvenket, Srinivasan; Andrie, Steven; Simon, Mark; Johnson, Kyle W; Sailer, Robert A

    2012-10-24

    Atmospheric pressure plasma enhanced chemical vapor deposition (AP-PECVD) using Surfx Atomflow(TM) 250D APPJ was utilized to synthesize amorphous silicon carbonitride coatings using tetramethyldisilizane (TMDZ) and hexamethyldisilizane (HMDZ) as the single source precursors. The effect of precursor chemistry and substrate temperature (T(s)) on the properties of a-SiCN:H films were evaluated, while nitrogen was used as the reactive gas. Surface morphology of the films was evaluated using atomic force microscopy (AFM); chemical properties were determined using Fourier transform infrared spectroscopy (FTIR); thickness and optical properties were determined using spectroscopic ellipsometry and mechanical properties were determined using nanoindentation. In general, films deposited at substrate temperature (T(s)) films deposited at T(s) > 200 °C depicted strong Si-N and Si-CN absorption. Refractive indices (n) of the thin films showed values between 1.5 and 2.0, depending on the deposition parameters. Mechanical properties of the films determined using nanoindentation revealed that these films have hardness between 0.5 GPa and 15 GPa, depending on the T(s) value. AFM evaluation of the films showed high roughness (R(a)) values of 2-3 nm for the films grown at low T(s) (films grown at T(s) ≥ 300 °C exhibited atomically smooth surface with R(a) of ~0.5 nm. Based on the gas-phase (plasma) chemistry, precursor chemistry and the other experimental observations, a possible growth model that prevails in the AP-PECVD of a-SiCN:H thin films is proposed.

  15. Atomic layer deposition of tantalum nitride based thin films from cyclopentadienyl type precursor

    Energy Technology Data Exchange (ETDEWEB)

    Anacleto, A. Correia, E-mail: anthony.correia@airliquide.co [Air Liquide, Centre de Recherche Claude Delorme, 1, chemin de la porte des loges - Les Loges en Josas - BP 126, 78354 Jouy en Josas Cedex (France); Zauner, A.; Cany-Canian, D. [Air Liquide, Centre de Recherche Claude Delorme, 1, chemin de la porte des loges - Les Loges en Josas - BP 126, 78354 Jouy en Josas Cedex (France); Gatineau, J. [Air Liquide, Air Liquide Laboratories, 28 Wadai, Tsukuba-shi, Ibaraki-Pref. 300-4247 (Japan); Hugon, M.-C. [Laboratoire de Physique des Gaz et Plasmas, UMR 8578, CNRS - Universite Paris Sud 11, 15, rue Georges Clemenceau, 91405 Orsay Cedex (France)

    2010-10-29

    Tantalum nitride based thin films have been deposited on p-Si (100) and SiO{sub 2}/Si by thermal Atomic Layer Deposition (ALD) using either the Ta(= N{sup t}Bu)(NEt{sub 2}){sub 3} or a derivative, in which one dialkylamido ligand is substituted by a {eta}{sup 5}-cyclopentadienyl ({eta}{sup 5}-Cp), as metal organic precursors with ammonia as reducing agent. TaN{sub x}C{sub y} self-limiting temperature dependent ALD growth was achieved for the TaCp(= N{sup t}Bu)(NEt{sub 2}){sub 2}/NH{sub 3} process with a growth rate of 0.51-0.91 A cycle{sup -1} in the 400-425 {sup o}C temperature range while between 240 and 280 {sup o}C, the growth of TaN based films from the Ta(= N{sup t}Bu)(NEt{sub 2}){sub 3} was accompanied by a partial decomposition of the precursor. The {eta}{sup 5}-cyclopentadienyl type compound allows lower nitrogen content in the precursor and thereafter in the deposited film. Although N/Ta ratio is close to one at temperatures of 390 and 400 {sup o}C, as analyzed by Rutherford Back Scattering and Nuclear Reaction Analysis, films were amorphous independently of the deposition temperature. Since Ta-C bonds are present in the Cp derivative, the TaCp(= N{sup t}Bu)(NEt{sub 2}){sub 2} tends more likely to form tantalum carbide compared to Ta(= N{sup t}Bu)(NEt{sub 2}){sub 3}, which leads to lower thin film resistivity. For both precursors, employed in their respective ALD window, films were smooth with a root-mean-square roughness close to 1 nm.

  16. Growth and surface characterization of TiNbZr thin films deposited by magnetron sputtering for biomedical applications

    Energy Technology Data Exchange (ETDEWEB)

    Tallarico, D.A. [Federal University of Sao Carlos, Materials Science and Engineering Graduation Program, Via Washington Luis km 235, CEP 13565-905 Sao Carlos, SP (Brazil); Gobbi, A.L. [Brazilian Nanotechnology National Laboratory, Rua Giuseppe Máximo Scolfaro 10.000, CEP 13083-100 Campinas, SP (Brazil); Paulin Filho, P.I. [Federal University of Sao Carlos, Department of Materials Engineering, Via Washington Luis km 235, CEP 13565-905 Sao Carlos, SP (Brazil); Maia da Costa, M.E.H. [Pontifical Catholic University of Rio de Janeiro, Department of Physics, CEP 22451-900 Rio de Janeiro, RJ (Brazil); Nascente, P.A.P., E-mail: nascente@ufscar.br [Federal University of Sao Carlos, Department of Materials Engineering, Via Washington Luis km 235, CEP 13565-905 Sao Carlos, SP (Brazil)

    2014-10-01

    Low modulus of elasticity and the presence of non-toxic elements are important criteria for the development of materials for implant applications. Low modulus Ti alloys can be developed by designing β-Ti alloys containing non-toxic alloying elements such as Nb and Zr. Actually, most of the metallic implants are produced with stainless steel (SS) because it has adequate bulk properties to be used as biomaterials for orthopedic or dental implants and is less expensive than Ti and its alloys, but it is less biocompatible than them. The coating of this SS implants with Ti alloy thin films may be one alternative to improve the biomaterial properties at a relatively low cost. Sputtering is a physical deposition technique that allows the formation of nanostructured thin films. Nanostructured surfaces are interesting when it comes to the bone/implant interface due to the fact that both the surface and the bone have nanoscale particle sizes and similar mechanical properties. TiNbZr thin films were deposited on both Si(111) and stainless steel (SS) substrates. The TiNbZr/Si(111) film was used as a model system, while the TiNbZr/SS film might improve the biocompatibility and extend the life time of stainless steel implants. The morphology, chemical composition, Young's modulus, and hardness of the films were analyzed by atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), energy-dispersive X-ray spectroscopy (EDS), and nanoindentation. - Highlights: • TiNbZr thin films were deposited on Si(111) and stainless steel (SS). • Their Young's modulus differences are within 5.3% and hardness 1.7%. • TiNbZr/SS film chemical composition remained almost constant with depth. • TiNbZr films presented nanostructured grains and low roughness for substrates. • TiNbZr/SS film hardness was about 100% greater than the SS substrate hardness.

  17. Tailoring Si(100) substrate surfaces for GaP growth by Ga deposition: A low-energy electron microscopy study

    Energy Technology Data Exchange (ETDEWEB)

    Rienäcker, Michael; Borkenhagen, Benjamin, E-mail: b.borkenhagen@pe.tu-clausthal.de; Lilienkamp, Gerhard; Daum, Winfried [TU Clausthal, Institut für Energieforschung und Physikalische Technologien, Leibnizstraße 4, D-38678 Clausthal-Zellerfeld (Germany)

    2015-08-07

    For GaP-on-Si(100) heteroepitaxy, currently considered as a model system for monolithic integration of III–V semiconductors on Si(100), the surface steps of Si(100) have a major impact on the quality of the GaP film. Monoatomic steps cause antiphase domains in GaP with detrimental electronic properties. A viable route is to grow the III–V epilayer on single-domain Si(100) with biatomic steps, but preferably not at the expense of reduced terrace widths introduced by miscut substrates. We have performed in situ investigations of the influence of Ga deposition on the kinetics of surface steps and terraces of Si(100) at substrate temperatures above 600 °C by low-energy electron microscopy. Starting from nearly equally distributed T{sub A} and T{sub B} terraces of a two-domain Si(100) surface, submonolayer deposition of Ga results in a transformation into a surface dominated by T{sub A} terraces and biatomic D{sub A} steps. This transformation is reversible, and Si(100) with monoatomic steps is recovered upon termination of the Ga flux. Under conditions of higher coverages (but still below 0.25 monolayer), we observe restructuring into a surface with T{sub B} dominance, similar to the findings of Hara et al. [J. Appl. Phys. 98, 083515 (2005)]. The occurrence and mutual transformations of surface structures with different terrace and step structures in a narrow range of temperatures and Ga deposition rates is discussed.

  18. GeSn growth kinetics in reduced pressure chemical vapor deposition from Ge2H6 and SnCl4

    Science.gov (United States)

    Aubin, J.; Hartmann, J. M.

    2018-01-01

    We have investigated the low temperature epitaxy of high Sn content GeSn alloys in a 200 mm industrial Reduced Pressure - Chemical Vapor Deposition tool from Applied Materials. Gaseous digermane (Ge2H6) and liquid tin tetrachloride (SnCl4) were used as the Ge and Sn precursors, respectively. The impact of temperature (in the 300-350 °C range), Ge2H6 and SnCl4 mass-flows on the GeSn growth kinetics at 100 Torr has been thoroughly explored. Be it at 300 °C or 325 °C, a linear GeSn growth rate increase together with a sub-linear Sn concentration increase occurred as the SnCl4 mass-flow increased, irrespective of the Ge2H6 mass flow (fixed or varying). The Sn atoms seemed to catalyze H desorption from the surface, resulting in higher GeSn growth rates for high SnCl4 mass-flows (in the 4-21 nm min-1 range). The evolution of the Sn content x with the F (SnCl4) 2 ·/F (Ge2H6) mass-flow ratio was fitted by x2/(1 - x) = n ·F (SnCl4) 2 ·/F (Ge2H6), with n = 0.25 (325 °C) and 0.60 (300 °C). We have otherwise studied the impact of temperature, in the 300-350 °C range, on the GeSn growth kinetics. The GeSn growth rate exponentially increased with the temperature, from 15 up to 32 nm min-1. The associated activation energy was low, i.e. Ea = 10 kcal mol-1. Meanwhile, the Sn content decreased linearly as the growth temperature increased, from 15% at 300 °C down to 6% at 350 °C.

  19. Pro NET Best Practices

    CERN Document Server

    Ritchie, Stephen D

    2011-01-01

    Pro .NET Best Practices is a practical reference to the best practices that you can apply to your .NET projects today. You will learn standards, techniques, and conventions that are sharply focused, realistic and helpful for achieving results, steering clear of unproven, idealistic, and impractical recommendations. Pro .NET Best Practices covers a broad range of practices and principles that development experts agree are the right ways to develop software, which includes continuous integration, automated testing, automated deployment, and code analysis. Whether the solution is from a free and

  20. Getting to Net Zero

    Energy Technology Data Exchange (ETDEWEB)

    2016-09-01

    The technology necessary to build net zero energy buildings (NZEBs) is ready and available today, however, building to net zero energy performance levels can be challenging. Energy efficiency measures, onsite energy generation resources, load matching and grid interaction, climatic factors, and local policies vary from location to location and require unique methods of constructing NZEBs. It is recommended that Components start looking into how to construct and operate NZEBs now as there is a learning curve to net zero construction and FY 2020 is just around the corner.

  1. Instant Lucene.NET

    CERN Document Server

    Heydt, Michael

    2013-01-01

    Filled with practical, step-by-step instructions and clear explanations for the most important and useful tasks. A step-by-step guide that helps you to index, search, and retrieve unstructured data with the help of Lucene.NET.Instant Lucene.NET How-to is essential for developers new to Lucene and Lucene.NET who are looking to get an immediate foundational understanding of how to use the library in their application. It's assumed you have programming experience in C# already, but not that you have experience with search techniques such as information retrieval theory (although there will be a l

  2. Effect of power on growth of nanocrystalline silicon films deposited by VHF PECVD technique for solar cell applications

    Science.gov (United States)

    Juneja, Sucheta; Verma, Payal; Savelyev, Dmitry A.; Khonina, Svetlana N.; Sudhakar, S.; Kumar, Sushil

    2016-04-01

    An investigation of the effect of power on the deposition of nanocrystalline silicon thin films were carried out using a gaseous mixture of silane and hydrogen in the 60MHz assisted VHF plasma enhanced chemical vapor deposition (PECVD) technique. The power was varied from 10 to 50 watt maintaining all other parameters constant. Corresponding layer properties w.r.t. material microstructure, optical, hydrogen content and electrical transport are studied in detail. The structural properties have been studied by Raman spectroscopy and x-ray diffraction (XRD). The presence of nano-sized crystals and their morphology have been investigated using atomic force microscopy (AFM). The role of bonded hydrogen content in the films have been studied from the results of Fourier transform infrared spectroscopy. It was observed from the results that with increase in power, crystalline volume fraction increases and crystallite size changes from 4 to 9 nm. The optical band gap varies from 1.7 to 2.1eV due to quantum confinement effect and which further can be explained with reduced hydrogen content. These striking features of nc-Si films can be used to fabricate stable thin film solar cells.

  3. Room-Temperature Growth of SiC Thin Films by Dual-Ion-Beam Sputtering Deposition

    Directory of Open Access Journals (Sweden)

    C. G. Jin

    2008-01-01

    Full Text Available Silicon carbide (SiC films were prepared by single and dual-ion-beamsputtering deposition at room temperature. An assisted Ar+ ion beam (ion energy Ei = 150 eV was directed to bombard the substrate surface to be helpful for forming SiC films. The microstructure and optical properties of nonirradicated and assisted ion-beam irradicated films have been characterized by transmission electron microscopy (TEM, scanning electron microscopy (SEM, Fourier transform infrared spectroscopy (FTIR, and Raman spectra. TEM result shows that the films are amorphous. The films exposed to a low-energy assisted ion-beam irradicated during sputtering from a-SiC target have exhibited smoother and compacter surface topography than which deposited with nonirradicated. The ion-beam irradicated improves the adhesion between film and substrate and releases the stress between film and substrate. With assisted ion-beam irradicated, the density of the Si–C bond in the film has increased. At the same time, the excess C atoms or the size of the sp2 bonded clusters reduces, and the a-Si phase decreases. These results indicate that the composition of the film is mainly Si–C bond.

  4. Photovoltaic performance of dye-sensitized solar cell low temperature growth of ZnO nanorods using chemical bath deposition.

    Science.gov (United States)

    Lee, Jeong-Gwan; Choi, Young-Cheol; Lee, Do-Kyung; Ahn, Kwang-Soon; Kim, Jae Hong

    2012-04-01

    Nanostructured ZnO photoelectrodes were synthesized on fluorine-doped tin oxide (FTO) glass substrates that were spin-coated with a sol-gel based ZnO seed layer via a chemical bath deposition (CBD) method at varying times of 1, 2, 4, and 8 h. Then, TiO2 nanoparticulate electrodes were prepared on ZnO nanorods using the doctor blade technique. The uniformly grown ZnO nanorod layer had a length of approximately 710 nm on the FTO glass substrate with wurtzite structures which was confirmed through X-ray diffraction patterns. The length and diameter of the ZnO nanorods increased with an increase in the deposition time. The DSSCs fabricated with TiO2 nanoparticulate/grown ZnO nanorods and grown for 8 h showed the maximum efficiency (5.51%) with a short circuit current density (J(sc)) of 12.21 mA/cm2 and an open circuit voltage (V(oc)) of 0.70 at 100 mW/cm2 light intensity.

  5. Net Zero Energy Buildings

    DEFF Research Database (Denmark)

    Marszal, Anna Joanna; Bourrelle, Julien S.; Musall, Eike

    2010-01-01

    and identify possible renewable energy supply options which may be considered in calculations. Finally, the gap between the methodology proposed by each organisation and their respective national building code is assessed; providing an overview of the possible changes building codes will need to undergo......The international cooperation project IEA SHC Task 40 / ECBCS Annex 52 “Towards Net Zero Energy Solar Buildings”, attempts to develop a common understanding and to set up the basis for an international definition framework of Net Zero Energy Buildings (Net ZEBs). The understanding of such buildings...... parameters used in the calculations are discussed and the various renewable supply options considered in the methodologies are summarised graphically. Thus, the paper helps to understand different existing approaches to calculate energy balance in Net ZEBs, highlights the importance of variables selection...

  6. PhysioNet

    Data.gov (United States)

    U.S. Department of Health & Human Services — The PhysioNet Resource is intended to stimulate current research and new investigations in the study of complex biomedical and physiologic signals. It offers free...

  7. NetSig

    DEFF Research Database (Denmark)

    Horn, Heiko; Lawrence, Michael S; Chouinard, Candace R

    2018-01-01

    Methods that integrate molecular network information and tumor genome data could complement gene-based statistical tests to identify likely new cancer genes; but such approaches are challenging to validate at scale, and their predictive value remains unclear. We developed a robust statistic (Net......Sig) that integrates protein interaction networks with data from 4,742 tumor exomes. NetSig can accurately classify known driver genes in 60% of tested tumor types and predicts 62 new driver candidates. Using a quantitative experimental framework to determine in vivo tumorigenic potential in mice, we found that Net......Sig candidates induce tumors at rates that are comparable to those of known oncogenes and are ten-fold higher than those of random genes. By reanalyzing nine tumor-inducing NetSig candidates in 242 patients with oncogene-negative lung adenocarcinomas, we find that two (AKT2 and TFDP2) are significantly amplified...

  8. TideNet

    Science.gov (United States)

    2015-10-30

    query tide data sources in a desired geographic region of USA and its territories (Figure 1). Users can select a tide data source through the Google Map ...select data sources according to the desired geographic region. It uses the Google Map interface to display data from different sources. Recent...Coastal Inlets Research Program TideNet The TideNet is a web-based Graphical User Interface (GUI) that provides users with GIS mapping tools to

  9. Building Neural Net Software

    OpenAIRE

    Neto, João Pedro; Costa, José Félix

    1999-01-01

    In a recent paper [Neto et al. 97] we showed that programming languages can be translated on recurrent (analog, rational weighted) neural nets. The goal was not efficiency but simplicity. Indeed we used a number-theoretic approach to machine programming, where (integer) numbers were coded in a unary fashion, introducing a exponential slow down in the computations, with respect to a two-symbol tape Turing machine. Implementation of programming languages in neural nets turns to be not only theo...

  10. Interaction Nets in Russian

    OpenAIRE

    Salikhmetov, Anton

    2013-01-01

    Draft translation to Russian of Chapter 7, Interaction-Based Models of Computation, from Models of Computation: An Introduction to Computability Theory by Maribel Fernandez. "In this chapter, we study interaction nets, a model of computation that can be seen as a representative of a class of models based on the notion of 'computation as interaction'. Interaction nets are a graphical model of computation devised by Yves Lafont in 1990 as a generalisation of the proof structures of linear logic...

  11. Programming NET 35

    CERN Document Server

    Liberty, Jesse

    2009-01-01

    Bestselling author Jesse Liberty and industry expert Alex Horovitz uncover the common threads that unite the .NET 3.5 technologies, so you can benefit from the best practices and architectural patterns baked into the new Microsoft frameworks. The book offers a Grand Tour" of .NET 3.5 that describes how the principal technologies can be used together, with Ajax, to build modern n-tier and service-oriented applications. "

  12. Influence of C60 co-deposition on the growth kinetics of diindenoperylene-From rapid roughening to layer-by-layer growth in blended organic films

    Science.gov (United States)

    Lorch, C.; Novák, J.; Banerjee, R.; Weimer, S.; Dieterle, J.; Frank, C.; Hinderhofer, A.; Gerlach, A.; Carla, F.; Schreiber, F.

    2017-02-01

    We investigated the growth of the two phase-separating materials diindenoperylene (DIP) and buckminsterfullerene C60 with different mixing ratio in real-time and in situ by X-ray scattering experiments. We found that at room temperature, mixtures with an excess of DIP show a growth mode which is very close to the perfect layer-by-layer limit with DIP crystallites forming over the entire film thickness. An unexpected increase in the island size is observed for these mixtures as a function of film thickness. On the other hand, equimolar and C60 dominated mixtures grow with poor crystallinity but form very smooth films. Additionally, it is observed that higher substrate temperatures lead to an increase in the length scale of phase separation with film thickness.

  13. Influence of substrate topography on the growth and magnetic properties of obliquely deposited amorphous nanocolumns of Fe-Ni

    Energy Technology Data Exchange (ETDEWEB)

    Thomas, Senoy; Anantharaman, M R [Department of Physics, Cochin University of Science and Technology, Cochin 682022 (India); Al-Harthi, S H; Al-Omari, I A [Department of Physics, College of Science, Sultan Qaboos University, PO Box 36, Postal Code 123, Muscat (Oman); Ramanujan, R V; Swaminathan, V, E-mail: senoythomas@yahoo.co.i, E-mail: mraiyer@gmail.co [School of Materials Science and Engineering, Nanyang Avenue, Nanyang Technological University, Singapore 639798 (Singapore)

    2009-11-07

    We investigated the influence of substrate surface roughness on the structural and magnetic properties of obliquely deposited amorphous nanocolumns of Fe-Ni. Experiments showed that the surface roughness of the substrate greatly determines the morphology of the columnar structures and this in turn has a profound influence on the magnetic properties. Nucleation of Fe-Ni nanocolumns on a smooth silicon substrate was at random, while that on a rough glass substrate was defined by the irregularities on the substrate surface. It has been found that magnetic interaction between the nanocolumns prepared on a silicon substrate was due to their small inter-column separation. Well separated nanocolumns on a glass substrate resulted in exchange isolated magnetic domains. The size, shape and the distribution of nanocolumns can be tailored by appropriately choosing the surface roughness of the substrate. This will find potential applications in thin film magnetism.

  14. Ultra thin films of gadolinium deposited by evaporation in ultra high vacuum conditions: Composition, growth and morphology

    Energy Technology Data Exchange (ETDEWEB)

    Herrera-Sancho, O.A.; Castro-Gonzalez, D.; Araya-Pochet, J.A. [Centro de Investigacion en Ciencia e Ingenieria de Materiales, Universidad de Costa Rica, 2060 San Pedro, San Jose (Costa Rica); Escuela de Fisica, Universidad de Costa Rica, 2060 San Pedro, San Jose (Costa Rica); Vargas-Castro, W.E., E-mail: william.vargascastro@ucr.ac.cr [Centro de Investigacion en Ciencia e Ingenieria de Materiales, Universidad de Costa Rica, 2060 San Pedro, San Jose (Costa Rica); Escuela de Fisica, Universidad de Costa Rica, 2060 San Pedro, San Jose (Costa Rica)

    2011-02-01

    Ultra-thin gadolinium films with thicknesses between 8 and 101 A were deposited on AT-cut crystalline quartz substrates under ultra high vacuum conditions, and subsequently subjected to composition and morphologic characterization through X-ray photo-spectroscopy analysis and atomic force microscopy. Oxygen contamination is found on the samples, and its amount is estimated in terms of the thickness of an oxygen layer over the gadolinium films after subtracting the contribution to the XPS spectra of the underlying background. Atomic force microscope pictures provide evidence of having metal island films, with two growing regimes: the Volmer-Weber mode for the thinner films considered and the Stranski-Krastanov growing mode for the thicker ones. From evaluation of the sticking coefficient, the shape of the islands is approximated in terms of oblate spheroid caps and variation of the contact angle with film mass thickness is reported.

  15. Bifunctional catalyst of graphite-encapsulated iron compound nanoparticle for magnetic carbon nanotubes growth by chemical vapor deposition

    Science.gov (United States)

    Saraswati, Teguh Endah; Prasiwi, Oktaviana Dewi Indah; Masykur, Abu; Anwar, Miftahul

    2017-01-01

    The carbon nanotube has widely taken great attractive in carbon nanomaterial research and application. One of its preparation methods is catalytic chemical vapor deposition (CCVD) using catalyst i.e. iron, nickel, etc. Generally, except the catalyst, carbon source gasses as the precursor are still required. Here, we report the use of the bifunctional material of Fe3O4/C which has an incorporated core/shell structures of carbon-encapsulated iron compound nanoparticles. The bifunctional catalyst was prepared by submerged arc discharge that simply performed using carbon and carbon/iron oxide electrodes in ethanol 50%. The prepared material was then used as a catalyst in thermal chemical vapor deposition at 800°C flown with ethanol vapor as the primer carbon source in a low-pressure condition. This catalyst might play a dual role as a catalyst and secondary carbon source for growing carbon nanotubes at the time. The synthesized products were characterized by transmission electron microscopy (TEM) and X-ray diffraction (XRD) analysis. The successful formation of carbon nanotubes was assigned by the shifted X-ray diffracted peak of carbon C(002), the iron oxides of Fe3O4 and γ-Fe2O3, and the other peaks which were highly considered to the other carbon allotropes with sp2 hybridization structures. The other assignment was studied by electron microscopy which successfully observed the presence of single-wall carbon nanotubes. In addition, the as-prepared carbon nanotubes have a magnetic property which was induced by the remaining of metal catalyst inside the CNT.

  16. Effects of acidic deposition on nutrient uptake, nutrient cycling and growth processes of vegetation in the spruce-fir ecosystem

    Energy Technology Data Exchange (ETDEWEB)

    McLaughlin, S.B.; Garten, C.T.; Wullschleger, S.D. [Oak Ridge National Lab., TN (United States)] [and others

    1996-10-16

    This report summarizes progress in three years of field research designed to evaluate biological and chemical indicators of the current and future health of the Southern Appalachian spruce-fir ecosystem. The emphasis of this research has been on the identification and understanding of mechanisms through which current levels of acidic deposition are impacting ecosystem processes. The identification of these principal mechanisms and key biological indicators of change was designed to improve our capabilities to detect, monitor, and assess the effects of air quality regulations and attendant future air quality changes on ecosystem response. Individual research tasks focused on the following research areas: (1) the significance of foliar uptake of atmospheric sources of nitrogen in relationship to plant utilization of N from available soil reserves; (2) linkages between atmospheric inputs to the soil surface, solution chemistry, and decomposition in the upper organic soil horizons; (3) effects of soil solution chemistry on uptake of cations and aluminum by fine roots; and (4) the effects of varying rates of calcium supply on carbon metabolism of Fraser fir and red spruce, and the relationship between calcium levels in wood cells and integrity of wood formed in bole and branches. Each of the individual tasks was designed to focus upon a mechanism or process that we consider critical to understanding chemical and biological linkages. These linkages will be important determinants in understanding the basis of past and potential future responses of the high elevation Southern Appalachian Forest to acidic deposition and other co-occurring environmental stresses. This report contains (1) background and rationale for the research undertaken in 1992-94; (2) a summary of principal research findings; (3) publications from this research; and (4) characterization of data sets produced by this research which will be the basis of future research, analyses and/or publications.

  17. Spontaneous growth of whiskers from an interlayer of Mo sub 2 C beneath a diamond particle deposited in a combustion-flame

    Energy Technology Data Exchange (ETDEWEB)

    Okada, Katsuyuki; Komatsu, Shojiro; Ishigaki, Takamasa; Matsumoto, Seiichiro; Moriyoshi, Yusuke (National Inst. for Research in Inorganic Materials, Tsukuba, Ibaraki (Japan))

    1992-02-01

    When diamond particles deposited on a molybdenum substrate in a C{sub 2}H{sub -}O{sub 2} combustion-flame were kept for one year in the ambient atmosphere at room temperature, spontaneous whisker growth from an interlayer of Mo{sub 2}C beneath the diamond particles took place. The whiskers were clarified by electron probe micro-analysis (EPMA) and transmission electron microscopy (TEM) in a polycrystal composed of MoO{sub 2}, MoOC, and Mo{sub 2}C. The growth mechanism of them is discussed from two different points of view as follows: One is that the oxidation of an interlayer of Mo{sub 2}C beneath a diamond particle effectively reduces the surface free energy between the interlayer and diamond particle; consequently, the whisker can grow by using a screw dislocation. The other is that the internal stress existing between a diamond particle and an Mo{sub 2}C interlayer provides a very reactive zone where the growth of whisker takes place through the oxidation of Mo{sub 2}C. (orig.).

  18. Remote nitrogen microwave plasma chemical vapor deposition from a tetramethyl disilazane precursor. 1. Growth mechanism, structure, and surface morphology of silicon carbonitride films

    Energy Technology Data Exchange (ETDEWEB)

    Blaszczyk-Lezak, I. [Centre of Molecular and Macromolecular Studies, Polish Academy of Sciences, Sienkiewicza 112, PL-90-363 Lodz (Poland); Wrobel, A.M. [Centre of Molecular and Macromolecular Studies, Polish Academy of Sciences, Sienkiewicza 112, PL-90-363 Lodz (Poland)]. E-mail: amwrobel@bilbo.cbmm.lodz.pl; Aoki, T. [Research Institute of Electronics, Shizuoka University, Hamamatsu 432 (Japan); Nakanishi, Y. [Research Institute of Electronics, Shizuoka University, Hamamatsu 432 (Japan); Kucinska, I.; Tracz, A

    2006-02-21

    Silicon carbonitride (Si:C:N) films were produced by remote microwave nitrogen plasma chemical vapor deposition (RP-CVD) using a 1,1,3,3-tetramethyldisilazane precursor. The reactivity the precursor with atomic nitrogen was characterized using hexamethyldisilazane as a model compound. The effect of the substrate temperature (T {sub S}) on the kinetics of the RP-CVD process, chemical composition, structure, and surface morphology of resulting film has been investigated. The temperature dependencies of the mass- and thickness-based film growth rate imply that for low substrate temperature range (T {sub S} = 30-200 deg. C) film growth is limited by desorption of film-forming precursors, whereas in high substrate temperature range (T {sub S} = 200-400 deg. C) film growth is independent of the temperature and the rate of RP-CVD is mass-transport limited. The increase of the substrate temperature from 30 to 400 deg. C causes the elimination of organic moieties from the film and the formation of Si-N and Si-C network structure. The hypothetical chemical reactions contributing to film formation are discussed. The films were found to be morphologically homogeneous materials exhibiting very small surface roughness for higher substrate temperatures (T {sub S} 200-400 deg. C)

  19. Size-controlled growth of ZnO nanowires by catalyst-free high-pressure pulsed laser deposition and their optical properties

    Directory of Open Access Journals (Sweden)

    W. Z. Liu

    2011-06-01

    Full Text Available Single crystalline ZnO nanowires were fabricated on Si (100 substrates by catalyst-free high-pressure pulsed laser deposition. It is found that the nanowires start to form when the substrate temperature and growth pressure exceed the critical values of 700 oC and 700 Pa, and their size strongly depends on these growth conditions. That is, the aspect ratio of the nanowires decreases with increasing temperature or decreasing pressure. Such a size dependence on growth conditions was discussed in terms of surface migration and scattering of ablated atoms. Room-temperature photoluminescence spectrum of ZnO nanowires shows a dominant near-band-edge emission peak at 3.28 eV and a visible emission band centered at 2.39 eV. Temperature-dependent photoluminescence studies reveal that the former consists of the acceptor-bound exciton and free exciton emissions; while the latter varies in intensity with the aspect ratio of the nanowires and is attributed to the surface-mediated deep level emission.

  20. Optimization of growth conditions for InGaAs/InAlAs/InP quantum cascade lasers by metalorganic chemical vapor deposition

    Science.gov (United States)

    Huang, Yong; Ryou, Jae-Hyun; Dupuis, Russell D.; Pflügl, Christian; Capasso, Federico; Sun, Kewei; Fischer, Alec M.; Ponce, Fernando A.

    2011-02-01

    We investigate the growth conditions for lattice-matched InGaAs/InAlAs/InP quantum cascade lasers (QCLs) by metalorganic chemical vapor deposition (MOCVD). Effect of substrate misorientation, growth temperature, and V/III ratios of InGaAs and InAlAs layers on the surface morphology, optical quality, and impurity incorporation were systematically studied. It was found that epitaxial layers and multi-quantum-well structures grown at 720 °C with V/III ratios of 116 for InGaAs and 21 for InAlAs on InP substrates with an off-cut angle of ˜0.06° exhibit a stable step-flow growth and low oxygen and carbon contamination. Using these conditions, a ˜11.3-μm-thick QCL with an emission wavelength at ˜9.2 μm was grown and fabricated, which demonstrated excellent structural quality and operated at room temperature in pulsed mode with a threshold current density of 2.0 kA/cm 2 and a slope efficiency of 550 mW/A.

  1. CH3NH3PbI3 grain growth and interfacial properties in meso-structured perovskite solar cells fabricated by two-step deposition.

    Science.gov (United States)

    Yao, Zhibo; Wang, Wenli; Shen, Heping; Zhang, Ye; Luo, Qiang; Yin, Xuewen; Dai, Xuezeng; Li, Jianbao; Lin, Hong

    2017-01-01

    Although the two-step deposition (TSD) method is widely adopted for the high performance perovskite solar cells (PSCs), the CH3NH3PbI3 perovskite crystal growth mechanism during the TSD process and the photo-generated charge recombination dynamics in the mesoporous-TiO2 (mp-TiO2)/CH3NH3PbI3/hole transporting material (HTM) system remains unexploited. Herein, we modified the concentration of PbI2 (C(PbI2)) solution to control the perovskite crystal properties, and observed an abnormal CH3NH3PbI3 grain growth phenomenon atop mesoporous TiO2 film. To illustrate this abnormal grain growth mechanism, we propose that a grain ripening process is taking place during the transformation from PbI2 to CH3NH3PbI3, and discuss the PbI2 nuclei morphology, perovskite grain growing stage, as well as Pb:I atomic ratio difference among CH3NH3PbI3 grains with different morphology. These C(PbI2)-dependent perovskite morphologies resulted in varied charge carrier transfer properties throughout the mp-TiO2/CH3NH3PbI3/HTM hybrid, as illustrated by photoluminescence measurement. Furthermore, the effect of CH3NH3PbI3 morphology on light absorption and interfacial properties is investigated and correlated with the photovoltaic performance of PSCs.

  2. Pendeo-epitaxial growth of GaN on SiC and silicon substrates via metalorganic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Linthicum, K.J.; Gehrke, T.; Thomson, D.; Ronning, C.; Carlson, E.P.; Zorman, C.A.; Mehregany, M.; Davis, R.F.

    1999-07-01

    Pendeo-epitaxial lateral growth (PE) of GaN epilayers on (0001) 6H-silicon carbide and (111) Si substrates has been achieved. Growth on the latter substrate was accomplished through the use of a 3C-SiC transition layer. The coalesced PE GaN epilayers were characterized using scanning electron diffraction, x-ray diffraction and photoluminescence spectroscopy. The regions of lateral growth exhibited {approximately} 0.2{degree} crystallographic tilt relative to the seed layer. The GaN seed and PE epilayers grown on the 3C-SiC/Si substrates exhibited comparable optical characteristics to the GaN seed and PE grown on 6H-SiC substrates. The near band-edge emission of the GaN/3C-SiC/Si seed was 3.450 eV (FWHM {approximately} 19 meV) and the GaN/6H-SiC seed was 3.466 eV (FWHM {approximately} 4 meV).

  3. Interfacial CuAl2 precipitate nucleation and growth during the deposition of Al-4% Cu-1.5% Si alloys

    Science.gov (United States)

    Thomas, M. E.; Keyser, T. K.; Goo, E. K. W.

    1986-06-01

    A series of experiments was performed to evaluate the effects of varying substrate temperature on the vertical distribution of Cu in S-Gun■ sputtered films of Al-4% Cu-1.5% Si. Films having a thickness of 1 μm were sputtered onto substrates of SiO2 and Ti:W alloy films which were heated to temperatures between 25 and 360 °C. Rutherford backscattering and AES depth profile data indicated that a large fraction of the Cu was present near the substrate interface when deposited at elevated temperatures. Films prepared on substrates at room temperature exhibited little segregation. Placement of a Ti:W alloy barrier between the Al-Cu-Si film and the SiO2 substrate did not affect the Cu distribution. Cross-sectional transmission electron micrographs of samples prepared at 360 °C revealed the presence of Cu-rich precipitates approximately 4000 Å in size at the substrate interface. Precipitates formed in the room-temperature deposited films were approximately 1500 Å in size. These results suggest that, if sufficient thermal energy is available, Cu-rich precipitates which nucleate at the substrate interface will grow rapidly by depleting adjacent film regions of copper. The deduced driving force behind this phenomena is the desire of the system to reduce its precipitate surface to volume ratio and consequently free energy via an Ostwald ripening process. A surface diffusion mechanism is proposed to explain the interfacial precipitate nucleation and growth for the alloys deposited under cold substrate conditions.

  4. Effect of Growth Parameters and Annealing Atmosphere on the Properties of Cu2ZnSnS4 Thin Films Deposited by Cosputtering

    Directory of Open Access Journals (Sweden)

    Arun Khalkar

    2013-01-01

    Full Text Available Cu2ZnSnS4 (CZTS thin films were deposited using the cosputtering technique. The growth parameters, such as working pressure, target powers, and postannealing atmosphere, were optimized for CZTS films deposition. A comparative study between post annealing using sulfur vapor in a quartz tube furnace and sulfurization chamber using H2S gas was carried out to optimize the kesterite Cu2ZnSnS4 phase. 10 min annealing at 530°C in the furnace in sulfur vapor eliminated all the secondary phases and formed kesterite Cu2ZnSnS4. The diffusion of sulfur in the film during the annealing process enhanced the crystallinity of the film. The kesterite Cu2ZnSnS4 phase was confirmed by X-ray diffraction, Raman scattering, and optical measurements. The film showed phonon peaks corresponding to the kesterite CZTS, high-absorption coefficient (1.1 × 105 cm−1, and desired optical direct band gap (1.5 eV.

  5. TiO2 coatings via atomic layer deposition on polyurethane and polydimethylsiloxane substrates: Properties and effects on C. albicans growth and inactivation process

    Science.gov (United States)

    Pessoa, R. S.; dos Santos, V. P.; Cardoso, S. B.; Doria, A. C. O. C.; Figueira, F. R.; Rodrigues, B. V. M.; Testoni, G. E.; Fraga, M. A.; Marciano, F. R.; Lobo, A. O.; Maciel, H. S.

    2017-11-01

    Atomic layer deposition (ALD) surges as an attractive technology to deposit thin films on different substrates for many advanced biomedical applications. Herein titanium dioxide (TiO2) thin films were successful obtained on polyurethane (PU) and polydimethylsiloxane (PDMS) substrates using ALD. The effect of TiO2 films on Candida albicans growth and inactivation process were also systematic discussed. TiCl4 and H2O were used as precursors at 80 °C, while the reaction cycle number ranged from 500 to 2000. Several chemical, physical and physicochemical techniques were used to evaluate the growth kinetics, elemental composition, material structure, chemical bonds, contact angle, work of adhesion and surface morphology of the ALD TiO2 thin films grown on both substrates. For microbiological analyses, yeasts of standard strains of C. albicans were grown on non- and TiO2-coated substrates. Next, the antifungal and photocatalytic activities of the TiO2 were also investigated by counting the colony-forming units (CFU) before and after UV-light treatment. Chlorine-doped amorphous TiO2 films with varied thicknesses and Cl concentration ranging from 2 to 12% were obtained. In sum, the ALD TiO2 films suppressed the yeast-hyphal transition of C. albicans onto PU, however, a high adhesion of yeasts was observed. Conversely, for PDMS substrate, the yeast adhesion did not change, as observed in control. Comparatively to control, the TiO2-covered PDMS had a reduction in CFU up to 59.5% after UV treatment, while no modification was observed to TiO2-covered PU. These results pointed out that ALD chlorine-doped amorphous TiO2 films grown on biomedical polymeric surfaces may act as fungistatic materials. Furthermore, in case of contamination, these materials may also behave as antifungal materials under UV light exposure.

  6. Growth of nanocrystalline TiO{sub 2} films by pulsed-laser-induced liquid-deposition method and preliminary applications for dye-sensitized solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Guo-Bing; Fu, Min-Gong; Du, Guo-Ping; Li, Li; Qin, Xiao-Mei; Shi, Wang-Zhou [Shanghai Normal University, Key Laboratory of Optoelectronic Materials and Devices and Department of Physics, Shanghai (China); Lu, Bin [Shanghai Normal University, College of Life and Environment Sciences, Shanghai (China)

    2010-09-15

    A novel technique, the pulsed-laser-induced liquid-deposition (PLLD) method, has been employed to grow nanocrystalline TiO{sub 2} films on fluorine-doped tin-oxide-coated (FTO) glass substrates at room temperature. The PLLD method was implemented by directing a pulsed laser into a liquid precursor and depositing the photosynthesized nanocrystalline TiO{sub 2} on an FTO glass substrate immersed in the liquid precursor. The as-grown nanocrystalline TiO{sub 2} films were found to have a rutile crystal structure and consist of a number of flower-like TiO{sub 2} crystal units arrayed together on the FTO glass substrate. Each of the flower-like TiO{sub 2} crystal units was composed of many nanostructured TiO{sub 2} whiskers, and their building blocks were found to be bundles of TiO{sub 2} nanorods with diameter of about 5 nm. The growth of these TiO{sub 2} nanorods is highly anisotropic, with the preferential growth direction along [001]. As-grown nanocrystalline TiO{sub 2} films were annealed at 450 C in air for 30 min for the applications of dye-sensitized solar cells, and the nanostructured characteristics with good porosity were preserved after annealing. A preliminary dye-sensitized solar cell was built based on the annealed nanocrystalline TiO{sub 2} film. The results suggest that the PLLD method is a promising technique for growing nanocrystalline TiO{sub 2} films for photovoltaic applications. (orig.)

  7. Growth behaviors and biocidal properties of titanium dioxide films depending on nucleation duration in liquid phase deposition

    Science.gov (United States)

    Park, Sohyeon; Park, Joohee; Heo, Jiwoong; Hong, Bo Young; Hong, Jinkee

    2017-12-01

    Liquid phase deposition (LPD), which is a method to directly form a titanium dioxide (TiO2) film on a substrate, is the most practical method for applying TiO2 films to medical devices because it is performed at lower temperatures than other methods. The TiO2 films to be applied to medical devices should offer excellent antibacterial effect, but should be stable to normal cells and have appropriate strength. In this research, we observed that the size, shape, and density of TiO2 particles varied with the nucleation duration in LPD and confirmed that these results caused changes in several properties including the mechanical properties, cytotoxicity and antibacterial effect of TiO2 films. From the analysis of these results, we established the conditions for the preparation of TiO2 films that are suitable for medical devices and suggest a new approach to the study of TiO2 films prepared by LPD.

  8. Growth of magnesium diboride films on 2 inch diameter copper discs by hybrid physical–chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Withanage, Wenura K.; Xi, X. X.; Nassiri, Alireza; Lee, Namhoon; Wolak, Matthäus A.; Tan, Teng; Welander, Paul B.; Franzi, Matthew; Tantawi, Sami; Kustom, Robert L.

    2017-02-16

    Magnesium diboride (MgB2) coating is a potential candidate to replace bulk niobium (Nb) for superconducting radio frequency cavities due to the appealing superconducting properties of MgB2. MgB2 coating on copper may allow cavity operation near 20–25 K as a result of the high transition temperature (T c) of MgB2 and excellent thermal conductivity of Cu. We have grown MgB2 films on 2 inch diameter Cu discs by hybrid physical–chemical vapor deposition for radio frequency characterization. Structural and elemental analyses showed a uniform MgB2 coating on top of a Mg–Cu alloy layer with occasional intrusion of Mg–Cu alloy regions. High T c values of around 37 K and high critical current density (J c) on the order of 107 A cm-2 at zero field were observed. Radio frequency measurements at 11.4 GHz confirmed a high T c and showed a quality factor (Q 0) much higher than for Cu and close to that of Nb.

  9. Growth of magnesium diboride films on 2 inch diameter copper discs by hybrid physical-chemical vapor deposition

    Science.gov (United States)

    Withanage, Wenura K.; Xi, X. X.; Nassiri, Alireza; Lee, Namhoon; Wolak, Matthäus A.; Tan, Teng; Welander, Paul B.; Franzi, Matthew; Tantawi, Sami; Kustom, Robert L.

    2017-04-01

    Magnesium diboride (MgB2) coating is a potential candidate to replace bulk niobium (Nb) for superconducting radio frequency cavities due to the appealing superconducting properties of MgB2. MgB2 coating on copper may allow cavity operation near 20-25 K as a result of the high transition temperature (T c) of MgB2 and excellent thermal conductivity of Cu. We have grown MgB2 films on 2 inch diameter Cu discs by hybrid physical-chemical vapor deposition for radio frequency characterization. Structural and elemental analyses showed a uniform MgB2 coating on top of a Mg-Cu alloy layer with occasional intrusion of Mg-Cu alloy regions. High T c values of around 37 K and high critical current density (J c) on the order of 107 A cm-2 at zero field were observed. Radio frequency measurements at 11.4 GHz confirmed a high T c and showed a quality factor (Q 0) much higher than for Cu and close to that of Nb.

  10. Chemical Vapor Deposition Growth of Degenerate p-Type Mo-Doped ReS2 Films and Their Homojunction.

    Science.gov (United States)

    Qin, Jing-Kai; Shao, Wen-Zhu; Xu, Cheng-Yan; Li, Yang; Ren, Dan-Dan; Song, Xiao-Guo; Zhen, Liang

    2017-05-10

    Substitutional doping of transition metal dichalcogenide two-dimensional materials has proven to be effective in tuning their intrinsic properties, such as band gap, transport characteristics, and magnetism. In this study, we realized substitutional doping of monolayer rhenium disulfide (ReS2) with Mo via chemical vapor deposition. Scanning transmission electron microscopy demonstrated that Mo atoms are successfully doped into ReS2 by substitutionally replacing Re atoms in the lattice. Electrical measurements revealed the degenerate p-type semiconductor behavior of Mo-doped ReS2 field effect transistors, in agreement with density functional theory calculations. The p-n diode device based on a doped ReS2 and ReS2 homojunction exhibited gate-tunable current rectification behaviors, and the maximum rectification ratio could reach up to 150 at Vd = -2/+2 V. The successful synthesis of p-type ReS2 in this study could largely promote its application in novel electronic and optoelectronic devices.

  11. Growth of CdS thin films on indium coated glass substrates via chemical bath deposition and subsequent air annealing

    Energy Technology Data Exchange (ETDEWEB)

    Ghosh, Biswajit; Kumar, Kamlesh; Singh, Balwant Kr; Banerjee, Pushan; Das, Subrata, E-mail: neillohit@yahoo.co.in

    2014-11-30

    Graphical abstract: - Highlights: • CdS film grown on indium coated glass substrates via CBD and subsequent annealing. • Disappearance of the indium (1 1 2) peak confirms interdiffusion at 300 °C. • SIMS indicates the subsequent interdiffusion at progressively higher temperature. • Composite In–CdS layer showed lower photosensitivity compared to pure CdS. - Abstract: In the present work attempts were made to synthesize indium doped CdS films by fabricating In/CdS bilayers using CBD-CdS on vacuum evaporated In thin films and subsequent air annealing. 135 nm CdS films were grown onto 20 nm and 35 nm indium coated glass substrate employing chemical bath deposition technique. The In/CdS bilayers thus formed were subjected to heat treatment at the temperatures between 200 and 400 °C for 4 min in the muffle furnace to facilitate indium to diffuse into the CdS films. XRD pattern ascertained no noticeable shift in lattice constant implying grain boundary metal segregation, while secondary ion mass spectrometry indicated the diffusion profile of indium into CdS matrices. Mass spectrometry results showed that substantial diffusion of indium had been taken place within CdS at 400 °C. Dark and photocurrent with different illumination time were measured to ascertain the photosensitivity of pure and composite CdS films.

  12. Epitaxial growth of SrTiO3/YBa2Cu3O7 - x heterostructures by plasma-enhanced metalorganic chemical vapor deposition

    Science.gov (United States)

    Liang, S.; Chern, C. S.; Shi, Z. Q.; Lu, P.; Safari, A.; Lu, Y.; Kear, B. H.; Hou, S. Y.

    1994-06-01

    We report heteroepitaxial growth of SrTiO3 on YBa2Cu3O7-x/LaAlO3 substrates by plasma-enhanced metalorganic chemical vapor deposition. X-ray diffraction results indicated that SrTiO3 films were epitaxially grown on a (001) YBa2Cu3O7-x surface with [100] orientation perpendicular to the surface. The film composition, with Sr/Ti molar ratio in the range of 0.9 to 1.1, was determined by Rutherford backscattering spectrometry and energy dispersive spectroscopy. The thickness of the SrTiO3 films is 0.1-0.2 μm. The epitaxial growth was further evidenced by high-resolution transmission electron microscopy and selected area diffraction. Atomically abrupt SrTiO3/YBa2Cu3O7-x interface and epitaxial growth with [100]SrTiO3∥[001]YBa2Cu3O7-x were observed in this study. The superconducting transition temperature of the bottom YBa2Cu3O7-x layer, as measured by ac susceptometer, did not significantly degrade after the growth of overlayer SrTiO3. The capacitance-voltage measurements showed that the dielectric constant of the SrTiO3 films was as high as 315 at a signal frequency of 100 KHz. The leakage current density through the SrTiO3 films is about 1×10-6 A/cm2 at 2-V operation. Data analysis on the current-voltage characteristic indicated that the conduction process is related to bulk-limited Poole-Frenkel emission.

  13. Ion-assisted laser deposition of intermediate layers for YBa2Cu3O7-δ thin film growth on polycrystalline and amorphous substrates

    Energy Technology Data Exchange (ETDEWEB)

    Reade, Ronald P. [Univ. of California, Berkeley, CA (United States)

    1993-11-01

    The growth of YBa2Cu3O7-δ (YBCO) high-temperature superconductor thin films has largely been limited to deposition on single-crystal substrates to date. In order to expand the range of potential applications, growth on polycrystalline and amorphous substrates is desirable. In particular, the deposition of YBCO thin films with high critical current densities on polycrystalline metal alloys would allow the manufacture of superconducting tapes. However, it is shown that it is not possible to grow YBCO thin films directly on this type of substrate due to chemical and structural incompatibility. This work investigates the use of a yttria-stabilized zirconia (YSZ) intermediate layer to address this problem. An ion-assisted pulsed-laser deposition process is developed to provide control of orientation during the growth of the YSZ layers. The important properties of YBCO and YSZ are summarized and the status of research on thin film growth of these materials is reviewed. An overview of the pulsed-laser deposition (PLD) technique is presented. The use of ion-assisted deposition techniques to control thin film properties is discussed.

  14. Growth and Physical Structure of Amorphous Boron Carbide Deposited by Magnetron Sputtering on a Silicon Substrate with a Titanium Interlayer

    Directory of Open Access Journals (Sweden)

    Roberto Caniello

    2013-01-01

    Full Text Available Multilayer amorphous boron carbide coatings were produced by radiofrequency magnetron sputtering on silicon substrates. To improve the adhesion, titanium interlayers with different thickness were interposed between the substrate and the coating. Above three hundreds nanometer, the enhanced roughness of the titanium led to the growth of an amorphous boron carbide with a dense and continuing columnar structure, and no delamination effect was observed. Correspondingly, the adhesion of the coating became three time stronger than in the case of a bare silicon substrate. Physical structure and microstructural proprieties of the coatings were investigated by means of a scan electron microscopy, atomic force microscopy and X-ray diffraction. The adhesion of the films was measured by a scratch tester.

  15. Growth, Mineral Deposition, and Physiological Responses of Broiler Chickens Offered Honey in Drinking Water during Hot-Dry Season

    Directory of Open Access Journals (Sweden)

    Monsuru Oladimeji Abioja

    2012-01-01

    Full Text Available Growing broilers were offered either 0 (0H, 10 (10H, 20 mL (20H honey, or 0.5 g vitamin C/litre water (AA during hot-dry season. Honey had no significant (>0.05 effect on feed intake (FI, weight gain (WG, feed conversion ratio (FCR, water intake (WI, survival (SURV, dressed percentage (DRE, breast meat (BRE, gizzard (GIZ, drumstick (DRU, shank (SHA, thigh (THI, tibia volume (VOL, and magnesium (MAG. Effect of honey was significant (0.005. Higher dose of honey lowered PR and HR. Honey significantly (0.05 affected. 20H broilers had higher THY than 0H and 10H groups. In conclusion, honey did not affect growth but might improve broilers’ welfare when offered up to 20H during hot periods.

  16. Characterization and modeling of illite crystal particles and growth mechanisms in a zoned hydrothermal deposit, Lake City, Colorado

    Science.gov (United States)

    Bove, D.J.; Eberl, D.D.; McCarty, D.K.; Meeker, G.P.

    2002-01-01

    Mean thickness measurements and crystal-thickness distributions (CTDs) of illite particles vary systematically with changes in hydrothermal alteration type, fracture density, and attendant mineralization in a large acid-sulfate/Mo-porphyry hydrothermal system at Red Mountain, near Lake City, Colorado. The hydrothermal illites characterize an extensive zone of quartz-sericite-pyrite alteration beneath two deeply rooted bodies of magmatic-related, quartz-alunite altered rock. Nineteen illites from a 3000 ft vertical drill hole were analyzed by XRD using the PVP-10 intercalation method and the computer program MudMaster (Bertaut-Warren-Averbach technique). Mean crystallite thicknesses, as determined from 001 reflections, range from 5-7 nanometers (nm) at depths from 0-1700 ft, then sharply increase to 10-16 nm at depths between 1800-2100 ft, and decrease again to 4-5 nm below this level. The interval of largest particle thickness correlates strongly with the zone of most intense quartz-sericite-pyrite alteration (QSP) and attendant high-density stockwork fracturing, and with the highest concentrations of Mo within the drill core. CTD shapes for the illite particles fall into two main categories: asymptotic and lognormal. The shapes of the CTDs are dependent on conditions of illite formation. The asymptotic CTDs correspond to a nucleation and growth mechanism, whereas surface-controlled growth was the dominant mechanism for the lognormal CTDs. Lognormal CTDs coincide with major through-going fractures or stockwork zones, whereas asymptotic CTDs are present in wallrock distal to these intense fracture zones. The increase in illite particle size and the associated zone of intense QSP alteration and stockwork veining was related by proximity to the dacitic magma(s), which supplied both reactants and heat to the hydrothermal system. However, no changes in illite polytype, which in other studies reflect temperature transitions, were observed within this interval.

  17. La plataforma .NET

    OpenAIRE

    Fornas Estrada, Miquel

    2008-01-01

    L'aparició de la plataforma .NET Framework ha suposat un canvi molt important en la forma de crear i distribuir aplicacions, degut a que incorpora una sèrie d'innovacions tècniques i productives que simplifiquen molt les tasques necessàries per desenvolupar un projecte. La aparición de la plataforma. NET Framework ha supuesto un cambio muy importante en la forma de crear y distribuir aplicaciones, debido a que incorpora una serie de innovaciones técnicas y productivas que simplifican mucho...

  18. Biological Petri Nets

    CERN Document Server

    Wingender, E

    2011-01-01

    It was suggested some years ago that Petri nets might be well suited to modeling metabolic networks, overcoming some of the limitations encountered by the use of systems employing ODEs (ordinary differential equations). Much work has been done since then which confirms this and demonstrates the usefulness of this concept for systems biology. Petri net technology is not only intuitively understood by scientists trained in the life sciences, it also has a robust mathematical foundation and provides the required degree of flexibility. As a result it appears to be a very promising approach to mode

  19. Self-assembled growth and structural analysis of inclined GaN nanorods on nanoimprinted m-sapphire using catalyst-free metal-organic chemical vapor deposition

    Directory of Open Access Journals (Sweden)

    Kyuseung Lee

    2016-04-01

    Full Text Available In this study, self-assembled inclined (1-10-3-oriented GaN nanorods (NRs were grown on nanoimprinted (10-10 m-sapphire substrates using catalyst-free metal-organic chemical vapor deposition. According to X-ray phi-scans, the inclined GaN NRs were tilted at an angle of ∼57.5° to the [10-10]sapp direction. Specifically, the GaN NRs grew in a single inclined direction to the [11-20]sapp. Uni-directionally inclined NRs were formed through the one-sided (10-11-faceted growth of the interfacial a-GaN plane layer. It was confirmed that a thin layer of a-GaN was formed on r-facet nanogrooves of the m-sapphire substrate by nitridation. The interfacial a-GaN nucleation affected both the inclined angle and the growth direction of the inclined GaN NRs. Using X-ray diffraction and selective area electron diffraction, the epitaxial relationship between the inclined (1-10-3 GaN NRs and interfacial a-GaN layer on m-sapphire substrates was systematically investigated. Moreover, the inclined GaN NRs were observed to be mostly free of stacking fault-related defects using high-resolution transmission electron microscopy.

  20. Ion induced crystallization and grain growth of hafnium oxide nano-particles in thin-films deposited by radio frequency magnetron sputtering

    Science.gov (United States)

    Dhanunjaya, M.; Khan, S. A.; Pathak, A. P.; Avasthi, D. K.; Nageswara Rao, S. V. S.

    2017-12-01

    We report on the swift heavy ion (SHI) irradiation induced crystallization and grain growth of HfO2 nanoparticles (NPs) within the HfO2 thin-films deposited by radio frequency (RF) magnetron sputtering technique. As grown films consisted of amorphous clusters of non-spherical HfO2 NPs. These amorphous clusters are transformed to crystalline grains under 100 MeV Ag ion irradiation. These crystallites are found to be spherical in shape and are well dispersed within the films. The average size of these crystallites is found to increase with fluence. Pristine and irradiated films have been characterized by high resolution transmission electron microscopy (HRTEM), selected area electron diffraction (SAED), grazing incident x-ray diffraction (GIXRD) and photo luminescence (PL) measurements. The PL measurements suggested the existence of different types of oxygen related defects in pristine and irradiated samples. The observed results on crystallization and grain growth under the influence of SHI are explained within the framework of thermal spike model. The results are expected to provide useful information for understanding the electronic excitation induced crystallization of nanoparticles and can lead to useful applications in electronic and photonic devices.

  1. Effect of Two-Step Metal Organic Chemical Vapor Deposition Growth on Quality, Diameter and Density of InAs Nanowires on Si (111) Substrate

    Science.gov (United States)

    Yu, Hung Wei; Anandan, Deepak; Hsu, Ching Yi; Hung, Yu Chih; Su, Chun Jung; Wu, Chien Ting; Kakkerla, Ramesh Kumar; Ha, Minh Thien Huu; Huynh, Sa Hoang; Tu, Yung Yi; Chang, Edward Yi

    2017-10-01

    High-density (˜ 80/um2) vertical InAs nanowires (NWs) with small diameters (˜ 28 nm) were grown on bare Si (111) substrates by means of two-step metal organic chemical vapor deposition. There are two critical factors in the growth process: (1) a critical nucleation temperature for a specific In molar fraction (approximately 1.69 × 10-5 atm) is the key factor to reduce the size of the nuclei and hence the diameter of the InAs NWs, and (2) a critical V/III ratio during the 2nd step growth will greatly increase the density of the InAs NWs (from 45 μm-2 to 80 μm-2) and at the same time keep the diameter small. The high-resolution transmission electron microscopy and selected area diffraction patterns of InAs NWs grown on Si exhibit a Wurtzite structure and no stacking faults. The observed longitudinal optic peaks in the Raman spectra were explained in terms of the small surface charge region width due to the small NW diameter and the increase of the free electron concentration, which was consistent with the TCAD program simulation of small diameter (< 40 nm) InAs NWs.

  2. Growth and characterization of germanium epitaxial film on silicon (001 with germane precursor in metal organic chemical vapour deposition (MOCVD chamber

    Directory of Open Access Journals (Sweden)

    Kwang Hong Lee

    2013-09-01

    Full Text Available The quality of germanium (Ge epitaxial film grown directly on a silicon (Si (001 substrate with 6° off-cut using conventional germane precursor in a metal organic chemical vapour deposition (MOCVD system is studied. The growth sequence consists of several steps at low temperature (LT at 400 °C, intermediate temperature ramp (LT-HT of ∼10 °C/min and high temperature (HT at 600 °C. This is followed by post-growth annealing in hydrogen at temperature ranging from 650 to 825 °C. The Ge epitaxial film of thickness ∼ 1 μm experiences thermally induced tensile strain of 0.11 % with a treading dislocation density (TDD of ∼107/cm2 and the root-mean-square (RMS roughness of ∼ 0.75 nm. The benefit of growing Ge epitaxial film using MOCVD is that the subsequent III-V materials can be grown in-situ without the need of breaking the vacuum hence it is manufacturing worthy.

  3. A benchmark of co-flow and cyclic deposition/etch approaches for the selective epitaxial growth of tensile-strained Si:P

    Science.gov (United States)

    Hartmann, J. M.; Veillerot, M.; Prévitali, B.

    2017-10-01

    We have compared co-flow and cyclic deposition/etch processes for the selective epitaxial growth of Si:P layers. High growth rates, relatively low resistivities and significant amounts of tensile strain (up to 10 nm min-1, 0.55 mOhm cm and a strain equivalent to 1.06% of substitutional C in Si:C layers) were obtained at 700 °C, 760 Torr with a co-flow approach and a SiH2Cl2 + PH3 + HCl chemistry. This approach was successfully used to thicken the sources and drains regions of n-type fin-shaped Field Effect Transistors. Meanwhile, the (Si2H6 + PH3/HCl + GeH4) CDE process evaluated yielded at 600 °C, 80 Torr even lower resistivities (0.4 mOhm cm, typically), at the cost however of the tensile strain which was lost due to (i) the incorporation of Ge atoms (1.5%, typically) into the lattice during the selective etch steps and (ii) a reduction by a factor of two of the P atomic concentration in CDE layers compared to that in layers grown in a single step (5 × 1020 cm-3 compared to 1021 cm-3).

  4. Effect of fuel type and deposition surface temperature on the growth and structure of ash deposit collected during co-firing of coal with sewage-sludge, saw-dust and refuse derived fuel

    Energy Technology Data Exchange (ETDEWEB)

    Kupka, Tomasz; Zajac, Krzysztof; Weber, Roman [Clausthal Univ. of Technology, Clausthal-Zellerfeld (Germany). Inst. of Energy Process Engineering and Fuel Technology

    2008-07-01

    Blends of a South African bituminous ''Middleburg'' coal and three alternative fuels (a municipal sewage-sludge, a saw-dust and a refuse derived fuel) have been fired in the slagging reactor to examine the effect of the added fuel on slagging propensity of the mixtures. Two kinds of deposition probes have been used, un-cooled ceramic probes and air-cooled steal probes. Distinct differences in physical and chemical structures of the deposits collected using the un-cooled ceramic probes and air-cooled metal probes have been observed. Glassy, easily molten deposits collected on un-cooled ceramic deposition probes were characteristic for co-firing of municipal sewage-sludge with coal. Porous, sintered (not molten) but easily removable deposits of the same fuel blend have been collected on the air-cooled metal deposition probes. Loose, easy removable deposits have been sampled on air-cooled metal deposition probe during co-firing of coal/saw-dust blends. The mass of the deposit sampled at lower surface temperatures (550-700 C) was always larger than the mass sampled at higher temperatures (1100-1300 C) since the higher temperature ash agglomerated and sintered much faster than the low temperature deposit. (orig.)

  5. Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures

    Science.gov (United States)

    Wang, Wenliang; Yang, Weijia; Lin, Yunhao; Zhou, Shizhong; Li, Guoqiang

    2015-11-01

    2 inch-diameter GaN films with homogeneous thickness distribution have been grown on AlN/Si(111) hetero-structures by pulsed laser deposition (PLD) with laser rastering technique. The surface morphology, crystalline quality, and interfacial property of as-grown GaN films are characterized in detail. By optimizing the laser rastering program, the ~300 nm-thick GaN films grown at 750 °C show a root-mean-square (RMS) thickness inhomogeneity of 3.0%, very smooth surface with a RMS surface roughness of 3.0 nm, full-width at half-maximums (FWHMs) for GaN(0002) and GaN(102) X-ray rocking curves of 0.7° and 0.8°, respectively, and sharp and abrupt AlN/GaN hetero-interfaces. With the increase in the growth temperature from 550 to 850 °C, the surface morphology, crystalline quality, and interfacial property of as-grown ~300 nm-thick GaN films are gradually improved at first and then decreased. Based on the characterizations, the corresponding growth mechanisms of GaN films grown on AlN/Si hetero-structures by PLD with various growth temperatures are hence proposed. This work would be beneficial to understanding the further insight of the GaN films grown on Si(111) substrates by PLD for the application of GaN-based devices.

  6. Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition.

    Science.gov (United States)

    Price, Katherine M; Schauble, Kirstin E; McGuire, Felicia A; Farmer, Damon B; Franklin, Aaron D

    2017-07-12

    Regardless of the application, MoS2 requires encapsulation or passivation with a high-quality dielectric, whether as an integral aspect of the device (as with top-gated field-effect transistors (FETs)) or for protection from ambient conditions. However, the chemically inert surface of MoS2 prevents uniform growth of a dielectric film using atomic layer deposition (ALD)-the most controlled synthesis technique. In this work, we show that a plasma-enhanced ALD (PEALD) process, compared to traditional thermal ALD, substantially improves nucleation on MoS2 without hampering its electrical performance, and enables uniform growth of high-κ dielectrics to sub-5 nm thicknesses. Substrate-gated MoS2 FETs were studied before/after ALD and PEALD of Al2O3 and HfO2, indicating the impact of various growth conditions on MoS2 properties, with PEALD of HfO2 proving to be most favorable. Top-gated FETs with high-κ films as thin as ∼3.5 nm yielded robust performance with low leakage current and strong gate control. Mechanisms for the dramatic nucleation improvement and impact of PEALD on the MoS2 crystal structure were explored by X-ray photoelectron spectroscopy (XPS). In addition to providing a detailed analysis of the benefits of PEALD versus ALD on MoS2, this work reveals a straightforward approach for realizing ultrathin films of device-quality high-κ dielectrics on 2D crystals without the use of additional nucleation layers or damage to the electrical performance.

  7. Assessing the impacts of climate change and nitrogen deposition on Norway spruce (Picea abies L. Karst) growth in Austria with BIOME-BGC.

    Science.gov (United States)

    Eastaugh, Chris S; Pötzelsberger, Elisabeth; Hasenauer, Hubert

    2011-03-01

    The aim of this paper is to determine whether a detectable impact of climate change is apparent in Austrian forests. In regions of complex terrain such as most of Austria, climatic trends over the past 50 years show marked geographic variability. As climate is one of the key drivers of forest growth, a comparison of growth characteristics between regions with different trends in temperature and precipitation can give insights into the impact of climatic change on forests. This study uses data from several hundred climate recording stations, interpolated to measurement sites of the Austrian National Forest Inventory (NFI). Austria as a whole shows a warming trend over the past 50 years and little overall change in precipitation. The warming trends, however, vary considerably across certain regions and regional precipitation trends vary widely in both directions, which cancel out on the national scale These differences allow the delineation of 'climatic change zones' with internally consistent climatic trends that differ from other zones. This study applies the species-specific adaptation of the biogeochemical model BIOME-BGC to Norway spruce (Picea abies (L.) Karst) across a range of Austrian climatic change zones, using input data from a number of national databases. The relative influence of extant climate change on forest growth is quantified, and compared with the far greater impact of non-climatic factors. At the national scale, climate change is found to have negligible effect on Norway spruce productivity, due in part to opposing effects at the regional level. The magnitudes of the modeled non-climatic influences on aboveground woody biomass increment increases are consistent with previously reported values of 20-40 kg of added stem carbon sequestration per kilogram of additional nitrogen deposition, while climate responses are of a magnitude difficult to detect in NFI data.

  8. Tellurization Velocity-Dependent Metallic-Semiconducting-Metallic Phase Evolution in Chemical Vapor Deposition Growth of Large-Area, Few-Layer MoTe2.

    Science.gov (United States)

    Yang, Li; Zhang, Wenfeng; Li, Jie; Cheng, Shuai; Xie, Zijian; Chang, Haixin

    2017-02-28

    Phase engineering of two-dimensional (2D) transition metal dichalcogenides (TMDs) such as MoTe2 offers tremendous opportunities in various device applications. However, most of the existing methods so far only address the small-area local phase change or the growth of certain kinds of phases of MoTe2 film by laser irradiation, mechanical strain, or procursor type. Obtaining facile, tunable, reversible, and continuous-phase transition and evolution between different phases in direct growth of large-area, few-layer MoTe2 still remains challenging. Here, we develop a facile method to achieve phase control and transition and report a highly tunable, tellurization velocity-dependent metallic-semiconducting-metallic phase evolution in chemical vapor deposition (CVD) growth of large-area, few-layer MoTe2. We found four different phase stages, including two different types of coexistence phases of both 2H and 1 T' phases, 100% 2H phase, and 100% 1T' phase, would emerge, relying on the adopted tellurization velocity. Importantly, the tellurization velocity should be extremely controlled to obtain 100% 2H phase MoTe2, while 100% 1T' phase requires a fast tellurization velocity. We further found that such metallic-semiconducting-metallic phase evolution took place with a homogeneous spatial distribution and differs from previous reports in which obvious phase separations are usually found during the phase transition. The resulting MoTe2 shows high quality with room-temperature mobility comparable with mechanically exfoliated materials. The results might impact large-scale phase engineering of TMDs and other 2D materials for Weyl semimetal topological physics and potential 2D semiconductor device applications.

  9. Feeding time and feeding rate and its relationship with feed intake, feed efficiency, growth rate, and rate of fat deposition in growing Duroc barrows.

    Science.gov (United States)

    Rauw, W M; Soler, J; Tibau, J; Reixach, J; Gomez Raya, L

    2006-12-01

    Because feed is the major cost to pork production, management practices and breeding strategies are aimed at optimizing feed intake. Knowledge about the shape of feed intake and feeding behavior curves may be of interest for optimization of lean meat production. This study investigated trends based on daily measurements of feeding behavior in 200 Duroc barrows, originating from 5 sires and 200 dams, during growth. Daily values were examined between 88 and 188 d of age. Furthermore, phenotypic correlations between feeding length and feeding rate, and feeding frequency, feed intake, residual feed intake, growth rate, and rate of fat deposition were investigated for a period between 95 and 175 d of age. No differences were observed between sires for parameter estimates of a curvilinear function fitted to data on feeding length as a function of age, but the effect of sire was significant (P ages up to 132 d of age. Feeding rate (feed ingested for each minute spent eating) increased in a linear fashion with age (average R(2) = 0.80) and differently so for different sires (P feeding rate increased with increased BW and is related to the physical capacity for feed intake. Results indicate that pigs that ate faster also ate more (r = 0.29, P residual feed intake (r = -0.01). The linear regression slope of feeding rate on age seemed inherent to the individual and was correlated with feed intake but not with residual feed intake. Feeding length may be selected for in order to regulate absolute feed intake at different stages of growth.

  10. Effect of reaction parameters on the growth of MWCNTs using mesoporous Sb/MCM-41 by chemical vapour deposition

    Science.gov (United States)

    Atchudan, R.; Pandurangan, A.; Subramanian, K.

    2011-11-01

    Mesoporous Si-MCM-41 molecular sieve was synthesized hydrothermally and different wt.% of Sb (1.0, 2.0, 3.0, 5.0, 10.0, 15.0 and 20.0) was loaded on it by wet impregnation method. The Sb/MCM-41 materials were characterized by various physico-chemical techniques such as XRD, TGA and TEM. The TEM image showed a honeycomb structure of the host material. They were used as catalytic templates for the growth of MWCNTs by CVD method with different temperatures at 700, 800, 900 and 1000 °C using acetylene as a carbon precursor. The reaction temperature was optimized for the better formation of MWCNTs and they were purified and then characterized by XRD, SEM, HR-TEM and Raman spectroscopy techniques. The formation of MWCNTs with diameter in the range of 4-6 nm was observed from HR-TEM. The good thermal stability and high productivity of catalyst observed in this study revealed that the 2 wt.% Sb loaded MCM-41 could be a promising support for the catalytic synthesis of MWCNTs at 800 °C by CVD method.

  11. Petri Nets-Applications

    Indian Academy of Sciences (India)

    Home; Journals; Resonance – Journal of Science Education; Volume 4; Issue 9. Petri Nets - Applications. Y Narahari. General Article Volume 4 Issue 9 September 1999 pp 44-52. Fulltext. Click here to view fulltext PDF. Permanent link: http://www.ias.ac.in/article/fulltext/reso/004/09/0044-0052. Author Affiliations. Y Narahari ...

  12. Safety nets or straitjackets?

    DEFF Research Database (Denmark)

    Ilsøe, Anna

    2012-01-01

    Does regulation of working hours at national and sector level impose straitjackets, or offer safety nets to employees seeking working time flexibility? This article compares legislation and collective agreements in the metal industries of Denmark, Germany and the USA. The industry has historically...

  13. Coloured Petri Nets

    CERN Document Server

    Jensen, Kurt

    2009-01-01

    Coloured Petri Nets (CPN) is a graphical language for modelling and validating concurrent and distributed systems, and other systems in which concurrency plays a major role. This book introduces the constructs of the CPN modelling language and presents the related analysis methods. It provides a comprehensive road map for the practical use of CPN.

  14. Boom Booom Net Radio

    DEFF Research Database (Denmark)

    Grimshaw, Mark Nicholas; Yong, Louisa; Dobie, Ian

    1999-01-01

    of an existing Internet radio station; Boom Booom Net Radio. Whilst necessity dictates some use of technology-related terminology, wherever possible we have endeavoured to keep such jargon to a minimum and to either explain it in the text or to provide further explanation in the appended glossary....

  15. Game Theory .net.

    Science.gov (United States)

    Shor, Mikhael

    2003-01-01

    States making game theory relevant and accessible to students is challenging. Describes the primary goal of GameTheory.net is to provide interactive teaching tools. Indicates the site strives to unite educators from economics, political and computer science, and ecology by providing a repository of lecture notes and tests for courses using…

  16. Coloured Petri Nets

    DEFF Research Database (Denmark)

    Jensen, Kurt; Kristensen, Lars Michael

    Coloured Petri Nets (CPN) is a graphical language for modelling and validating concurrent and distributed systems, and other systems in which concurrency plays a major role. The development of such systems is particularly challenging because of inherent intricacies like possible nondeterminism...

  17. Impact of soil drought on leaf growth of a teak plantation in a dry tropical region and the subsequent impact of leaf area on both canopy net assimilation and evapotranspiration

    Science.gov (United States)

    Tanaka, Katsunori

    2010-05-01

    The current study demonstrated the interannual variations from the beginning of leaf expansion to the peak at a stand level in a dry tropical climate of northern Thailand. Radiative transmittance was measured from March-July in 2001-2008, and seasonal changes in leaf area were qualitatively estimated based on this time series. Soil moisture was also measured, and its influence on leaf growth was shown. Next, a soil-plant-air (SPAC) continuum multilayer model was used to numerically simulate net canopy assimilation (An) and evapotranspiration (ET) for 8 years, to examine the seasonal changes in LAI on An and ET. Two numerical experiments with different seasonal patterns of LAI were carried out using above-canopy hydro-meteorological data as input data. The first experiment involved seasonally varying LAI estimated based on time-series of radiative transmittance through the canopy, and the second experiment applied a constant LAI (or the peak values of LAI) after the flushing. In the first simulation, the simulated transpiration agreed with seasonal changes in heat pulse velocity, corresponding to the water use of individual trees. In the second numerical simulations, the constant LAI increased transpiration at small LAI, particularly immediately after leaf flush. But, the seasonal changes in simulated transpiration were apparently similar to those in observed heat pulse velocity. This implies that soil water, which is balanced in SPAC systems by precipitation, canopy interception, soil evaporation, soil water uptake by transpiration, and discharge, can mainly control the seasonal changes in transpiration. The simulated An became negative under soil drought during the leaf expansion stage in the second simulation, while it became positive or slightly negative even under soil drought in the first simulation. Thus, the limitation of leaf expansion rate caused by soil drought can be favorable for carbon gain.

  18. Food Safety Nets:

    OpenAIRE

    Haggblade, Steven; Diallo, Boubacar; Staatz, John; Theriault, Veronique; Traoré, Abdramane

    2013-01-01

    Food and social safety nets have a history as long as human civilization. In hunter gatherer societies, food sharing is pervasive. Group members who prove unlucky in the short run, hunting or foraging, receive food from other households in anticipation of reciprocal consideration at a later time (Smith 1988). With the emergence of the first large sedentary civilizations in the Middle East, administrative systems developed specifically around food storage and distribution. The ancient Egyptian...

  19. Net technical assessment

    OpenAIRE

    Wegmann, David G.

    1989-01-01

    Approved for public release; distribution is unlimited. The present and near term military balance of power between the U.S. and the Soviet Union can be expressed in a variety of net assessments. One can examine the strategic nuclear balance, the conventional balance in Europe, the maritime balance, and many others. Such assessments are essential not only for policy making but for arms control purposes and future force structure planning. However, to project the future military balance, on...

  20. Inclined angle-controlled growth of GaN nanorods on m-sapphire by metal organic chemical vapor deposition without a catalyst.

    Science.gov (United States)

    Lee, Kyuseung; Chae, Sooryong; Jang, Jongjin; Min, Daehong; Kim, Jaehwan; Eom, Daeyong; Yoo, Yang-Seok; Cho, Yong-Hoon; Nam, Okhyun

    2015-08-21

    In this study, we have intentionally grown novel types of (11-22)- and (1-10-3)-oriented(3) and self-assembled inclined GaN nanorods (NRs) on (10-10) m-sapphire substrates using metal organic chemical vapor deposition without catalysts and ex situ patterning. Nitridation of the m-sapphire surface was observed to be crucial to the inclined angle as well as the growth direction of the GaN NRs. Polarity-selective KOH etching confirmed that both (11-22) and (1-10-3) GaN NRs are nitrogen-polar. Using pole figure measurements and selective area electron diffraction patterns, the epitaxial relationship between the inclined (11-22) and (1-10-3) GaN NRs and m-sapphire substrates was systematically demonstrated. Furthermore, it was verified that the GaN NRs were single-crystalline wurtzite structures. We observed that stacking fault-related defects were generated during the initial growth stage using high-resolution transmission electron microscopy. The blue-shift of the near band edge (NBE) peak in the inclined angle-controlled GaN NRs can be explained by a band filling effect through carrier saturation of the conduction band, resulting from a high Si-doping concentration; in addition, the decay time of NBE emission in (11-22)- and (1-10-3)-oriented NRs was much shorter than that of stacking fault-related emission. These results suggest that defect-free inclined GaN NRs can be grown on m-sapphire without ex situ treatment.

  1. Using WordNet for Building WordNets

    CERN Document Server

    Farreres, X; Farreres, Xavier; Rodriguez, Horacio; Rigau, German

    1998-01-01

    This paper summarises a set of methodologies and techniques for the fast construction of multilingual WordNets. The English WordNet is used in this approach as a backbone for Catalan and Spanish WordNets and as a lexical knowledge resource for several subtasks.

  2. Investigating impacts of economic growth on the environment using remote sensing tools: A case study of gross domestic product and net primary production in China from 2001 to 2007

    Science.gov (United States)

    Zhao, Naizhuo

    Pursuing sustainable co-development of economy and environment has been established as a basic national policy by the present Chinese government. However, studies regarding actual outcomes of the co-development policy at the whole Chinese scale are still limited. Detecting China's economic growth and changes of environmental quality will not only contribute to evaluation of outcomes of the co-development policy but more importantly is an opportunity to examine the suitability of the IPAT model and improve our understanding of human-environment interactions. The core of the IPAT theory is an equation where I=PxAxT that models human impact on the environment as a function of changes to population (P), affluence ( A), and technology (T). The IPAT theory emphasizes that economic growth will inevitably produce negative impacts on the environment. Thus, if China's environmental quality declined while economic growth occurred, then the IPAT theory will be substantiated. Otherwise, the suitability of the IPAT theory will be called into question and its tenets must be reconsidered. In this dissertation research I selected gross domestic product (GDP) and net primary production (NPP) as indicators to evaluate production of social and ecological systems respectively. The main study objectives are (1) to develop a methodology to facilitate integration of the two indicators derived from demographic data sources and satellite imagery at different geographic scales, (2) to jointly explore changing patterns of China's economic and ecological production (i.e., spatially and temporally coincident patterns of change in GDP and NPP) across different spatial scales, (3) to analyze whether economic growth has produced negative impacts on ecosystem production and whether the impacts correlate to the economic growth, and finally (4) to discuss whether the IPAT theory is suitable for explaining the joint changes of GDP and NPP in China or if it is in need of modification. To fulfill the

  3. The growth of high density network of MOF nano-crystals across macroporous metal substrates - Solvothermal synthesis versus rapid thermal deposition

    Science.gov (United States)

    Maina, James W.; Gonzalo, Cristina Pozo; Merenda, Andrea; Kong, Lingxue; Schütz, Jürg A.; Dumée, Ludovic F.

    2018-01-01

    Fabrication of metal organic framework (MOF) films and membranes across macro-porous metal substrates is extremely challenging, due to the large pore sizes across the substrates, poor wettability, and the lack of sufficient reactive functional groups on the surface, which prevent high density nucleation of MOF crystals. Herein, macroporous stainless steel substrates (pore size 44 × 40 μm) are functionalized with amine functional groups, and the growth of ZIF-8 crystals investigated through both solvothermal synthesis and rapid thermal deposition (RTD), to assess the role of synthesis routes in the resultant membranes microstructure, and subsequently their performance. Although a high density of well interconnected MOF crystals was observed across the modified substrates following both techniques, RTD was found to be a much more efficient route, yielding high quality membranes under 1 h, as opposed to the 24 h required for solvothermal synthesis. The RTD membranes also exhibited high gas permeance, with He permeance of up to 2.954 ± 0.119 × 10-6 mol m-2 s-1 Pa-1, and Knudsen selectivities for He/N2, Ar/N2 and CO2/N2, suggesting the membranes were almost defect free. This work opens up route for efficient fabrication of MOF films and membranes across macro-porous metal supports, with potential application in electrically mediated separation applications.

  4. Total polysaccharide of Yupingfeng protects against bleomycin-induced pulmonary fibrosis via inhibiting transforming growth factor-β1-mediated type I collagen abnormal deposition in rats.

    Science.gov (United States)

    Xu, Liang; Li, Liu-cheng; Zhao, Ping; Qi, Lian-wen; Li, Ping; Gao, Jian; Fei, Guang-he

    2014-12-01

    This study was to explore the antifibrotic effect and the possible mechanism of total polysaccharides of Yupingfeng (YPF-P) on bleomycin (BLM)-induced pulmonary fibrosis in rats. Pulmonary fibrosis was induced in Sprague-Dawley rats by BLM (5 mg/kg), killed 14 and 28 days after BLM administration by abdominal aorta exsanguination and removed the lungs. Lung coefficient was counted at the same time. Besides, H&E and Masson's trichrome staining for histopathological changes of lung tissues were observed. Additionally, western blotting and immunohistochemical staining techniques were used to detect expression of transforming growth factor-β1 (TGF-β1), type I collagen (Col-I) and α-smooth muscle actin (α-SMA). Finally, the levels of Col-I and hydroxyproline (HYP) in lung tissues were also utilized. YPF-P alleviated the increase of lung coefficient induced by BLM instillation in pulmonary fibrosis rat, pathologic changes and collagen distribution were obviously ameliorated, while the increase of α-SMA-positive cells and TGF-β1 expression was prevented after YPF-P treatment. Moreover, the contents of HYP and Col-I were decreased in YPF-P group. YPF-P had antifibrotic effect in experiment, which may reduce the synthesis and promote the deposition of Col-I via suppressing the increase of TGF-β1-mediated activation of myofibroblasts. © 2014 Royal Pharmaceutical Society.

  5. The Effect of Alumina and Magnesia Supported Germanium Nanoparticles on the Growth of Carbon Nanotubes in the Chemical Vapor Deposition Method

    Directory of Open Access Journals (Sweden)

    Ghazaleh Allaedini

    2015-01-01

    Full Text Available The effect of alumina and magnesia supported germanium (Ge nanoparticles on the synthesis of carbon nanotubes (CNTs using the chemical vapor deposition (CVD method in atmospheric pressure was investigated. The TEM micrographs confirmed the formation of carbon nanotubes, and the field emission scanning electron microscopy (FESEM analysis suggested a tip-growth mechanism for the grown carbon nanotubes. The X-ray diffraction (XRD pattern indicated a graphitic nature of the carbon nanotubes. The obtained CNTs using Ge nanoparticles supported by MgO resulted in a higher degree of graphitization than the CNTs obtained using Ge nanoparticles supported by Al2O3. Raman spectroscopy analysis of the CNTs confirmed the presence of radial breathing modes (RBM, which verified the formation of CNTs. High frequency Raman analysis demonstrated that the degree of graphitization of the synthesized CNTs using magnesia supported Ge nanoparticles is higher than that of the alumina supported Ge nanoparticles with the values of (ID/IG ratios equal to 0.45 and 0.73, respectively.

  6. Cubic-phase zirconia nano-island growth using atomic layer deposition and application in low-power charge-trapping nonvolatile-memory devices

    Science.gov (United States)

    El-Atab, Nazek; Gamze Ulusoy, Turkan; Ghobadi, Amir; Suh, Junkyo; Islam, Raisul; Okyay, Ali K.; Saraswat, Krishna; Nayfeh, Ammar

    2017-11-01

    The manipulation of matter at the nanoscale enables the generation of properties in a material that would otherwise be challenging or impossible to realize in the bulk state. Here, we demonstrate growth of zirconia nano-islands using atomic layer deposition on different substrate terminations. Transmission electron microscopy and Raman measurements indicate that the nano-islands consist of nano-crystallites of the cubic-crystalline phase, which results in a higher dielectric constant (κ ∼ 35) than the amorphous phase case (κ ∼ 20). X-ray photoelectron spectroscopy measurements show that a deep quantum well is formed in the Al2O3/ZrO2/Al2O3 system, which is substantially different to that in the bulk state of zirconia and is more favorable for memory application. Finally, a memory device with a ZrO2 nano-island charge-trapping layer is fabricated, and a wide memory window of 4.5 V is obtained at a low programming voltage of 5 V due to the large dielectric constant of the islands in addition to excellent endurance and retention characteristics.

  7. Controlling of growth performance, lipid deposits and fatty acid composition of chicken meat through a probiotic, Lactobacillus johnsonii during subclinical Clostridium perfringens infection.

    Science.gov (United States)

    Wang, Hesong; Ni, Xueqin; Liu, Lei; Zeng, Dong; Lai, Jing; Qing, Xiaodan; Li, Guangyao; Pan, Kangcheng; Jing, Bo

    2017-02-10

    Meat is considered as a major source of polyunsaturated fatty acid (PUFA) which is essential for humans, therefore its lipid level and fatty acid composition have drawn great attention. As no clinical sign can be found in chicks subclinically infected by Clostridium perfringens (CP), the meat may be purchased and eaten. The objective of the present study was to determine whether Lactobacillus johnsonii (LJ) can control the CP-caused impact on growth, lipid levels, fatty acid composition and other flavor or nutritional quality in the meat. 480 one-day-old chicks were divided into four groups and fed with basal diet (control and CP group). Supplemented with 1 × 10 5 (L-LJ) and 1 × 10 6 (H-LJ) colony-forming unit (cfu), CP diet was fed for 42 days. From day 19 to 22, birds of CP and LJ groups were administered with CP twice per day and the control was administered with liver broth. LJ-treated chickens were free from negative influences on growth performance and significant decrease of abdominal fat deposit., LJ inhibited CP-caused shearing force and drip loss increase and pH 40 min and 24 h decrease after sacrifice. In addition, LJ exhibited a positive effect on muscle lipid peroxidation by significantly increasing SOD, CAT and GSH-Px activity and decreasing MDA level. Besides, LJ attenuated the decrease of intramuscular fat, total cholesterol and triglyceride contents caused by CP infection. However, levels of total protein and most of amino acids were not changed. CP infection decreased C18:3n-3 (α-LA), C20:4n-6, C20:5n-3(EPA), C22:4n-6, C22:5n-3, C22:6n-3(DHA), total PUFA, n-3 PUFA and PUFA:SFA ratio and increased C14:0, total SFA and n-6:n-3 ratio. LJ was found to protect the muscle from these changes. Meanwhile, the 28-day gut permeability level was higher in CP group. These findings suggest that CP may affect the growth performance of chicks and negatively influence lipid content and fatty acid composition in chicken meat. Meanwhile, LJ treatment

  8. Proof nets for lingusitic analysis

    NARCIS (Netherlands)

    Moot, R.C.A.

    2002-01-01

    This book investigates the possible linguistic applications of proof nets, redundancy free representations of proofs, which were introduced by Girard for linear logic. We will adapt the notion of proof net to allow the formulation of a proof net calculus which is soundand complete for the

  9. Teaching Tennis for Net Success.

    Science.gov (United States)

    Young, Bryce

    1989-01-01

    A program for teaching tennis to beginners, NET (Net Easy Teaching) is described. The program addresses three common needs shared by tennis students: active involvement in hitting the ball, clearing the net, and positive reinforcement. A sample lesson plan is included. (IAH)

  10. Net4Care Ecosystem Website

    DEFF Research Database (Denmark)

    Christensen, Henrik Bærbak; Hansen, Klaus Marius; Rasmussen, Morten

    2012-01-01

    is a tele-monitoring scenario in which Net4Care clients are deployed in a gateway in private homes. Medical devices then connect to these gateways and transmit their observations to a Net4Care server. In turn the Net4Care server creates valid clinical HL7 documents, stores them in a national XDS repository...

  11. Biomimetic thin film deposition

    Energy Technology Data Exchange (ETDEWEB)

    Rieke, P.R.; Graff, G.E.; Campbell, A.A.; Bunker, B.C.; Baskaran, S.; Song, L.; Tarasevich, B.J.; Fryxell, G.E.

    1995-09-01

    Biological mineral deposition for the formation of bone, mollusk shell and other hard tissues provides materials scientists with illustrative materials processing strategies. This presentation will review the key features of biomineralization and how these features can be of technical importance. We have adapted existing knowledge of biomineralization to develop a unique method of depositing inorganic thin films and coating. Our approach to thin film deposition is to modify substrate surfaces to imitate the proteins found in nature that are responsible for controlling mineral deposition. These biomimetic surfaces control the nucleation and growth of the mineral from a supersaturated aqueous solution. This has many processing advantages including simple processing equipment, environmentally benign reagents, uniform coating of highly complex shapes, and enhanced adherence of coating. Many different types of metal oxide, hydroxide, sulfide and phosphate materials with useful mechanical, optical, electronic and biomedical properties can be deposited.

  12. AREVA net income: 649 million euros

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2007-03-15

    This document presents the financial statements for 2006 of Areva group: net income: 649 million euros; backlog up by 24.6% to 25.6 billion euros; steady growth of sales revenue: + 7.3%1 to 10.863 billion euros; operating income of 407 million euros: excellent divisional performance and constitution of a significant provision for the OL3 project in Finland; dividend proposed to Annual General Meeting of Shareholders: 8.46 euros per share.

  13. Substrate impact on the low-temperature growth of GaN thin films by plasma-assisted atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kizir, Seda; Haider, Ali; Biyikli, Necmi, E-mail: biyikli@unam.bilkent.edu.tr [National Nanotechnology Research Center (UNAM), Bilkent University, Bilkent, Ankara 06800, Turkey and Institute of Materials Science and Nanotechnology, Bilkent University, Bilkent, Ankara 06800 (Turkey)

    2016-07-15

    Gallium nitride (GaN) thin films were grown on Si (100), Si (111), and c-plane sapphire substrates at 200 °C via hollow-cathode plasma-assisted atomic layer deposition (HCPA-ALD) using GaEt{sub 3} and N{sub 2}/H{sub 2} plasma as group-III and V precursors, respectively. The main aim of the study was to investigate the impact of substrate on the material properties of low-temperature ALD-grown GaN layers. Structural, chemical, and optical characterizations were carried out in order to evaluate and compare film quality of GaN on different substrates. X-ray reflectivity measurements showed film density values of 5.70, 5.74, and 5.54 g/cm{sup 3} for GaN grown on Si (100), Si (111), and sapphire, respectively. Grazing incidence x-ray diffraction measurements exhibited hexagonal wurtzite structure in all HCPA-ALD grown GaN samples. However, dominant diffraction peak for GaN films grown on Si and sapphire substrates were detected differently as (002) and (103), respectively. X-ray diffraction gonio scans measured from GaN grown on c-plane sapphire primarily showed (002) orientation. All samples exhibited similar refractive index values (∼2.17 at 632 nm) with 2–3 at. % of oxygen impurity existing within the bulk of the films. The grain size was calculated as ∼9–10 nm for GaN grown on Si (100) and Si (111) samples while it was ∼5 nm for GaN/sapphire sample. Root-mean-square surface roughness values found as 0.68, 0.76, and 1.83 nm for GaN deposited on Si (100), Si (111), and sapphire, respectively. Another significant difference observed between the samples was the film growth per cycle: GaN/sapphire sample showed a considerable higher thickness value when compared with GaN/Si samples, which might be attributed to a possibly more-efficient nitridation and faster nucleation of sapphire surface.

  14. Optimisation of anatase TiO{sub 2} thin film growth on LaAlO{sub 3}(0 0 1) using pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Krupski, K., E-mail: k.j.krupski@warwick.ac.uk [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom); Sanchez, A.M. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom); Krupski, A. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom); Faculty of Science, SEES, University of Portsmouth, Portsmouth PO1 3QL (United Kingdom); McConville, C.F. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom)

    2016-12-01

    Highlights: • The anatase-TiO{sub 2} thin film is bonded directly to the LaAlO{sub 3}(0 0 1) substrate. • A well-ordered two-domain (1 × 4) and (4 × 1) reconstruction of anatase-TiO{sub 2} surface was observed by RHEED and LEED. • STM measurements indicates the coexistence of atomic steps of both 2.5 Å and 5 Å. • The atomic resolution STEM images reveal that the TiO{sub 2}/LaAlO{sub 3} interface to be terminated with LaO layer. - Abstract: Optimisation of epitaxial anatase TiO{sub 2} thin films grown on LaAlO{sub 3}(0 0 1) substrates was performed using ultra-high vacuum based pulsed laser deposition (PLD) and studied by in-situ reflection high-energy electron diffraction (RHEED). In addition, ex-situ X-ray diffraction (XRD), atomic force microscopy (AFM), and scanning transmission electron microscopy (STEM) were performed to characterise the bulk properties of these thin films. The deposited TiO{sub 2} thin film is demonstrated to have anatase phase and bonded directly to the LaAlO{sub 3}(0 0 1) substrate. In a separate ultra-high vacuum system low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM) measurements were performed and a well-ordered two-domain (1 × 4) and (4 × 1) reconstruction of anatase surface was observed. Analysis of the STM measurements indicates the coexistence of atomic steps of both 2.5 Å and 5.0 Å, confirming the existence of two TiO{sub 2} domains. The atomic resolution STEM images reveal that the TiO{sub 2}/LaAlO{sub 3} interface to be terminated with LaO layer and that the anatase-TiO{sub 2} reconstruction was found to be stable during the film growth.

  15. Master Robotic Net

    Directory of Open Access Journals (Sweden)

    Vladimir Lipunov

    2010-01-01

    Full Text Available The main goal of the MASTER-Net project is to produce a unique fast sky survey with all sky observed over a single night down to a limiting magnitude of 19-20. Such a survey will make it possible to address a number of fundamental problems: search for dark energy via the discovery and photometry of supernovae (including SNIa, search for exoplanets, microlensing effects, discovery of minor bodies in the Solar System, and space-junk monitoring. All MASTER telescopes can be guided by alerts, and we plan to observe prompt optical emission from gamma-ray bursts synchronously in several filters and in several polarization planes.

  16. Art/Net/Work

    DEFF Research Database (Denmark)

    Andersen, Christian Ulrik; Lindstrøm, Hanne

    2006-01-01

    The seminar Art|Net|Work deals with two important changes in our culture. On one side, the network has become essential in the latest technological development. The Internet has entered a new phase, Web 2.0, including the occurrence of as ‘Wiki’s’, ‘Peer-2-Peer’ distribution, user controlled...... the praxis of the artist. We see different kinds of interventions and activism (including ‘hacktivism’) using the network as a way of questioning the invisible rules that govern public and semi-public spaces. Who ‘owns’ them? What kind of social relationships do they generate? On what principle...

  17. Helminth.net: expansions to Nematode.net and an introduction to Trematode.net

    Science.gov (United States)

    Martin, John; Rosa, Bruce A.; Ozersky, Philip; Hallsworth-Pepin, Kymberlie; Zhang, Xu; Bhonagiri-Palsikar, Veena; Tyagi, Rahul; Wang, Qi; Choi, Young-Jun; Gao, Xin; McNulty, Samantha N.; Brindley, Paul J.; Mitreva, Makedonka

    2015-01-01

    Helminth.net (http://www.helminth.net) is the new moniker for a collection of databases: Nematode.net and Trematode.net. Within this collection we provide services and resources for parasitic roundworms (nematodes) and flatworms (trematodes), collectively known as helminths. For over a decade we have provided resources for studying nematodes via our veteran site Nematode.net (http://nematode.net). In this article, (i) we provide an update on the expansions of Nematode.net that hosts omics data from 84 species and provides advanced search tools to the broad scientific community so that data can be mined in a useful and user-friendly manner and (ii) we introduce Trematode.net, a site dedicated to the dissemination of data from flukes, flatworm parasites of the class Trematoda, phylum Platyhelminthes. Trematode.net is an independent component of Helminth.net and currently hosts data from 16 species, with information ranging from genomic, functional genomic data, enzymatic pathway utilization to microbiome changes associated with helminth infections. The databases’ interface, with a sophisticated query engine as a backbone, is intended to allow users to search for multi-factorial combinations of species’ omics properties. This report describes updates to Nematode.net since its last description in NAR, 2012, and also introduces and presents its new sibling site, Trematode.net. PMID:25392426

  18. 26 CFR 1.822-11 - Net premiums.

    Science.gov (United States)

    2010-04-01

    ... 26 Internal Revenue 8 2010-04-01 2010-04-01 false Net premiums. 1.822-11 Section 1.822-11 Internal Revenue INTERNAL REVENUE SERVICE, DEPARTMENT OF THE TREASURY (CONTINUED) INCOME TAX (CONTINUED) INCOME... Fire Or Flood Insurance Companies Which Operate on Basis of Perpetual Policies Or Premium Deposits) § 1...

  19. 26 CFR 1.823-1 - Net premiums.

    Science.gov (United States)

    2010-04-01

    ... 26 Internal Revenue 8 2010-04-01 2010-04-01 false Net premiums. 1.823-1 Section 1.823-1 Internal Revenue INTERNAL REVENUE SERVICE, DEPARTMENT OF THE TREASURY (CONTINUED) INCOME TAX (CONTINUED) INCOME... Fire Or Flood Insurance Companies Which Operate on Basis of Perpetual Policies Or Premium Deposits) § 1...

  20. Zinc oxide nanoparticles as a substitute for zinc oxide or colistin sulfate: Effects on growth, serum enzymes, zinc deposition, intestinal morphology and epithelial barrier in weaned piglets.

    Science.gov (United States)

    Wang, Chao; Zhang, Ligen; Su, Weipeng; Ying, Zhixiong; He, Jintian; Zhang, Lili; Zhong, Xiang; Wang, Tian

    2017-01-01

    The objective of this study was to evaluate effects of zinc oxide nanoparticles (nano-ZnOs) as a substitute for colistin sulfate (CS) and/or zinc oxide (ZnO) on growth performance, serum enzymes, zinc deposition, intestinal morphology and epithelial barrier in weaned piglets. A total of 216 crossbred Duroc×(Landrace×Yorkshire) piglets weaned at 23 days were randomly assigned into 3 groups, which were fed with basal diets supplemented with 20 mg/kg CS (CS group), 20mg/kg CS+3000 mg/kg ZnO (CS+ZnO group), and 1200 mg/kg nano-ZnOs (nano-ZnO group) for 14 days. Results indicated that compared to CS group, supplementation of 1200 mg/kg nano-ZnOs (about 30 nm) significantly increased final body weight and average daily gain, and 3000 mg/kg ZnO plus colistin sulfate significantly increased average daily gain and decreased diarrhea rate in weaned piglets. There was no significant difference in growth performance and diarrhea rate between nano-ZnO and CS+ZnO groups. Supplementation of nano-ZnOs did not affect serum enzymes (glutamic oxalacetic transaminase, glutamic-pyruvic transaminase, and lactate dehydrogenase), but significantly increased plasma and tissue zinc concentrations (liver, tibia), improved intestinal morphology (increased duodenal and ileal villus length, crypt depth, and villus surface), enhanced mRNA expression of ZO-1 in ileal mucosa, and significantly decreased diamine oxidase activity in plasma, total aerobic bacterial population in MLN as compared to CS group. Effects of nano-ZnOs on serum enzymes, intestinal morphology, and mRNA expressions of tight junction were similar to those of high dietary ZnO plus colistin sulfate, while nano-ZnOs significantly reduced zinc concentrations of liver, tibia, and feces, and decreased total aerobic bacterial population in MLN as compared to CS+ZnO group. These results suggested that nano-ZnOs (1200 mg/kg) might be used as a substitute for colistin sulfate and high dietary ZnO in weaned piglets.

  1. A Study of Effects of Acid Deposition on Pine Forest Ecosystem in Southwestern China

    Science.gov (United States)

    Zhang, J.; Li, F.; Lv, Z.; Song, W.; Yang, S.

    2013-12-01

    We used a long-term soil acidification model (LTSAM) and a terrestrial biogeochemical model (CENTURY) coupled to simulate the effects of acid deposition on pine forest ecosystem in southwestern China, based on indoor experiment results of aluminum toxicity to individual plant growth. The results of indoor aluminum experiments show that high aluminum concentration may restrict the plant growth and the acidic condition may aggravate it. The behavior of restriction of plant growth includes decreases of pine seedling biomass, root elongation and the sorption of soil cations (e.g. Ca2+, Mg2+, Na+ and K+). The model simulation results about soil chemistry show that, as acid deposition increases more, the pH value decreases faster, the soil aluminum ion concentration increase more rapidly, and the nutrition ions in soil solution decrease more quickly. The increased acid deposition also has negative impacts on the forest ecosystem according to the biogeochemical model simulation, for example, decreases of vegetation biomass, net primary productivity (NPP) and net CO2 uptake. Furthermore, the decrease of plant biomass will result in the decrease of the soil organic carbon content for the limited decomposition material supply.

  2. Insights into mechanisms governing forest carbon response to nitrogen deposition: a model–data comparison using observed responses to nitrogen addition

    Directory of Open Access Journals (Sweden)

    R. Q. Thomas

    2013-06-01

    Full Text Available In many forest ecosystems, nitrogen (N deposition enhances plant uptake of carbon dioxide, thus reducing climate warming from fossil fuel emissions. Therefore, accurately modeling how forest carbon (C sequestration responds to N deposition is critical for understanding how future changes in N availability will influence climate. Here, we use observations of forest C response to N inputs along N deposition gradients and at five temperate forest sites with fertilization experiments to test and improve a global biogeochemical model (CLM-CN 4.0. We show that the CLM-CN plant C growth response to N deposition was smaller than observed and the modeled response to N fertilization was larger than observed. A set of modifications to the CLM-CN improved the correspondence between model predictions and observational data (1 by increasing the aboveground C storage in response to historical N deposition (1850–2004 from 14 to 34 kg C per additional kg N added through deposition and (2 by decreasing the aboveground net primary productivity response to N fertilization experiments from 91 to 57 g C m−2 yr−1. Modeled growth response to N deposition was most sensitive to altering the processes that control plant N uptake and the pathways of N loss. The response to N deposition also increased with a more closed N cycle (reduced N fixation and N gas loss and decreased when prioritizing microbial over plant uptake of soil inorganic N. The net effect of all the modifications to the CLM-CN resulted in greater retention of N deposition and a greater role of synergy between N deposition and rising atmospheric CO2 as a mechanism governing increases in temperate forest primary production over the 20th century. Overall, testing models with both the response to gradual increases in N inputs over decades (N deposition and N pulse additions of N over multiple years (N fertilization allows for greater understanding of the mechanisms governing C–N coupling.

  3. The equivalency between logic Petri workflow nets and workflow nets.

    Science.gov (United States)

    Wang, Jing; Yu, ShuXia; Du, YuYue

    2015-01-01

    Logic Petri nets (LPNs) can describe and analyze batch processing functions and passing value indeterminacy in cooperative systems. Logic Petri workflow nets (LPWNs) are proposed based on LPNs in this paper. Process mining is regarded as an important bridge between modeling and analysis of data mining and business process. Workflow nets (WF-nets) are the extension to Petri nets (PNs), and have successfully been used to process mining. Some shortcomings cannot be avoided in process mining, such as duplicate tasks, invisible tasks, and the noise of logs. The online shop in electronic commerce in this paper is modeled to prove the equivalence between LPWNs and WF-nets, and advantages of LPWNs are presented.

  4. Wafer-scale growth of highly textured piezoelectric thin films by pulsed laser deposition for micro-scale sensors and actuators

    NARCIS (Netherlands)

    Nguyen, M. D.; Tiggelaar, R.; Aukes, Thomas; Rijnders, G.; Roelof, G.

    2017-01-01

    Piezoelectric lead-zirconate-Titanate (PZT) thin films were deposited on 4-inch (111)Pt/Ti/SiO2/Si(001) wafers using large-Area pulsed laser deposition (PLD). This study was focused on the homogeneity in film thickness, microstructure, ferroelectric and piezoelectric properties of PZT thin films.

  5. Effects of fabrication method of Al2O3 buffer layer on Rh-catalyzed growth of single-walled carbon nanotubes by alcohol-gas-source chemical vapor deposition

    Science.gov (United States)

    Kiribayashi, Hoshimitsu; Fujii, Takayuki; Kozawa, Akinari; Ogawa, Seigo; Saida, Takahiro; Naritsuka, Shigeya; Maruyama, Takahiro

    2017-06-01

    Amorphous Al2O3 buffer layers have been widely used to enhance the yield in the growth of single-walled carbon nanotubes (SWCNTs). In this study, we carried out SWCNT growth using a Rh catalyst on Al2O3 buffer layers that were prepared by three different methods based on electron beam (EB) evaporation: native oxidation of Al layer deposited by EB; thermal oxidation of Al layer deposited by EB; EB deposition of Al2O3 layer. We investigated the effects of fabrication method of the Al2O3 buffer layer on SWCNT yield and found that the SWCNT yield was the largest for Al2O3 layer prepared by EB deposition of Al2O3, while SWCNTs were not grown on the Al2O3 layer obtained by native oxidation of the Al layer. Based on the results of X-ray photoelectron spectroscopy, X-ray absorption near-edge structure, and atomic force microscopy, we examined the effects of crystalline quality and oxidation degree of Al2O3 layers on the catalytic activity.

  6. Coloured Petri Nets

    DEFF Research Database (Denmark)

    Jensen, Kurt; Kristensen, Lars Michael

    studies that illustrate the practical use of CPN modelling and validation for design, specification, simulation, verification and implementation in various application domains. Their presentation primarily aims at readers interested in the practical use of CPN. Thus all concepts and constructs are first......Coloured Petri Nets (CPN) is a graphical language for modelling and validating concurrent and distributed systems, and other systems in which concurrency plays a major role. The development of such systems is particularly challenging because of inherent intricacies like possible nondeterminism...... and the immense number of possible execution sequences. In this textbook, Jensen and Kristensen introduce the constructs of the CPN modelling language and present the related analysis methods in detail. They also provide a comprehensive road map for the practical use of CPN by showcasing selected industrial case...

  7. Mapping of QTL on chromosome X for fat deposition, muscling and growth traits in a wild boar x Meishan F2 family using a high-density gene map.

    Science.gov (United States)

    Cepica, S; Bartenschlager, H; Geldermann, H

    2007-12-01

    Quantitative trait loci (QTL) for fat deposition, growth and muscling traits have been previously mapped on the basis of low-density linkage maps in a wild boar x Meishan F2family to the chromosome X region flanked by SW2456 and SW1943. Improved QTL resolution was possible using data for F2 animals with a marker density of 2.7 cM distance in the SW2456 to SW1943 region, including AR, SERPINA7 and ACSL4 as candidate genes. The resolution of the QTL scan was increased substantially, as evidenced by the higher F-ratio values for all QTL. Maxima of F-ratio values for fat deposition, muscling and growth traits were 28.6, 18.2 and 16.5 respectively, and those QTL positions accounted for 7.9%, 5.0% and 4.5% of the F2 phenotypic variance (VF2) respectively. QTL for fatness and growth and for most muscling traits mapped near ACSL4, with the exception of the QTL for ham traits that mapped proximally, in the vicinity of AR. An analysis performed separately for F2 male animals showed the predominant QTL affecting fat deposition traits (up to 13.6% VF2) near AR and two QTL for muscling traits (up to 9.9% VF2) mapped close to ACSL4. In the F2 female animals, QTL affecting muscling (up to 12.1% VF2) mapped at ACSL4 and SW2456, and QTL for fat deposition (10% VF2) and growth (up to 10.5% VF2) mapped at ACSL4.

  8. Ozone flux over a Norway spruce forest and correlation with net ecosystem production

    Energy Technology Data Exchange (ETDEWEB)

    Zapletal, Milos, E-mail: milos.zapletal@ekotoxa.cz [Ekotoxa s.r.o. - Centre for Environment and Land Assessment, Oticka 37, 746 01 Opava (Czech Republic); Silesian University at Opava, Faculty of Philosophy and Science, Masarykova 37, 746 01 Opava (Czech Republic); Cudlin, Pavel [Institute of Systems Biology and Ecology of the AS CR, v.v.i., Na Sadkach 7, 37005 Ceske Budejovice (Czech Republic); Chroust, Petr [Ekotoxa s.r.o. - Centre for Environment and Land Assessment, Oticka 37, 746 01 Opava (Czech Republic); Urban, Otmar; Pokorny, Radek [Institute of Systems Biology and Ecology of the AS CR, v.v.i., Porici 3b, 60300 Brno (Czech Republic); Edwards-Jonasova, Magda [Institute of Systems Biology and Ecology of the AS CR, v.v.i., Na Sadkach 7, 37005 Ceske Budejovice (Czech Republic); Czerny, Radek; Janous, Dalibor; Taufarova, Klara [Institute of Systems Biology and Ecology of the AS CR, v.v.i., Porici 3b, 60300 Brno (Czech Republic); Vecera, Zbynek; Mikuska, Pavel [Institute of Analytical Chemistry of the AS CR, v.v.i., Veveri 97, 60200 Brno (Czech Republic); Paoletti, Elena [Institute of Plant Protection, National Research Council of Italy, via Madonna del Piano 10, 50019 Sesto Fiorentino (Italy)

    2011-05-15

    Daily ozone deposition flux to a Norway spruce forest in Czech Republic was measured using the gradient method in July and August 2008. Results were in good agreement with a deposition flux model. The mean daily stomatal uptake of ozone was around 47% of total deposition. Average deposition velocity was 0.39 cm s{sup -1} and 0.36 cm s{sup -1} by the gradient method and the deposition model, respectively. Measured and modelled non-stomatal uptake was around 0.2 cm s{sup -1}. In addition, net ecosystem production (NEP) was measured by using Eddy Covariance and correlations with O{sub 3} concentrations at 15 m a.g.l., total deposition and stomatal uptake were tested. Total deposition and stomatal uptake of ozone significantly decreased NEP, especially by high intensities of solar radiation. - Highlights: > We estimate ozone deposition flux to a Norway spruce forest using the gradient method and model. > The mean stomatal uptake of ozone is approximately 47% of the total deposition. > We measure net ecosystem production (NEP) using Eddy Covariance. > We test whether elevated total deposition and stomatal uptake of O{sub 3} imply a reduction of NEP. > Deposition and stomatal uptake of O{sub 3} decrease NEP, especially by high intensities of solar radiation. - Net ecosystem production of a Norway spruce forest decreases with increasing deposition and stomatal uptake of ozone.

  9. Above- and Below-ground Biomass, Net Ecosystem Carbon Exchange, and Soil Respiration in a Poplar Populus deltoides Bartr.) stand : Changes after 3 years of Growth under Elevated CO2

    Science.gov (United States)

    Barron-Gafford, G. A.; Grieve, K.; Bil, K.; Kudeyarov, V.; Handley, L.; Murthy, R.

    2003-12-01

    Stands of cottonwood (Populus deltoides Bartr.) trees were grown as a coppiced system under ambient (40 Pa), twice ambient (80 Pa), and three times ambient (120 Pa) partial pressure CO2 for the past three years in the Intensively-managed Forest Mesocosm (IFM) of the Biosphere 2 Center. Over three years Net Ecosystem CO2 exchange (NECE) was measured continuously and in the third year, nine whole trees were harvested from each CO2 treatment over the growing season. Both above- and below-ground parameters were measured. Three years of growth under elevated CO2 showed the expected stimulation in foliar biomass (8.7, 11.9, and 13.1 kg for the 40, 80, and 120 Pa treatments, respectively). Rates of NECE also followed an expected increase with elevated atmospheric CO2 concentrations, with maximum CO2 uptake rates reaching 10.5, 15.6, and 19.6 μ moles m-2 s-1 in the 40, 80, and 120 Pa treatments, respectively. However, above ground woody biomass and root biomass were not much stimulated beyond 80 Pa CO2. Wood/foliage and above/below ground biomass ratios reflect this decline. Under conditions of non-limiting nutrients and water, we found consistent increases in the above/below ground biomass ratio and wood to foliage biomass ratios in the 80 compared to the 40 Pa pCO2. Woody biomass production and the above/below ground biomass ratio were lower under the 120 Pa than any other treatment. Although biomass production did not change appreciably between 80 and 120 Pa CO2 treatments, both substrate induced and in-situ soil respiration values are also significantly higher in the 120Pa treatment, though no differences were present prior to CO2 treatments (Murthy et al. 2003). The unique closed-system operation of the IFM allowed for measures of soil CO2 efflux to be measured at both the soil collar and stand scales using a box model that takes into account all inputs and outputs from the stand. In-situ soil respiration rates increased significantly with increased atmospheric CO2

  10. Growth and Characterization of Carbon Nanofibers on Fe/C-Fiber Textiles Coated by Deposition-Precipitation and Dip-Coating.

    Science.gov (United States)

    Lee, Sang-Won; Lee, Chang-Seop

    2015-09-01

    This research was conducted to synthesize carbon nanofibers on C-fiber textiles, by thermal chemical vapor deposition (CVD) using Fe catalyst. The substrate, which was a carbon textile consisting of non-woven carbon fibers and attached graphite particles, was oxidized by nitric acid, before the deposition process. Hydroxyl groups were created on the C-fiber textile, due to the oxidization step. Fe(III) hydroxide was subsequently deposited on the oxidized surface of the C-fiber textile. To deposit ferric particles, two different methods were tested: (i) deposition-precipitation, and (ii) dip-coating. For the experiments using both types of catalyst deposition, the weight ratio of Fe to C-fiber textile was also varied. Ferric particles were reduced to iron after deposition, by using H2/N2 gas, and carbon nanofibers (CNFs) were grown by flowing ethylene gas. Properties of carbon nanofibers created like this were analyzed through Scanning Electron Microscopy (SEM), Energy Dispersive Spectroscopy (EDS), N2-sorption (BET), X-ray Diffraction (XRD), X-ray Photoelectron Spectoscopy (XPS), Thermal analysis (TG/DTA), and Raman spectroscopy. In the case of the deposition-precipitation method, the results show that the diameter of carbon nanofibers grew up to 40-60 nm and 30-55 nm, at which the weight ratios of Fe catalyst to C-fiber textiles were 1:30 and 1:70, respectively. When Fe particles were deposited by the dip-coating method, the diameter of carbon nanofibers grew up to 40-60 nm and 25-30 nm, for the ratios of Fe catalyst to C-fiber textiles of 1:10 and 1:30, respectively.

  11. Combined effects of iron and copper from atmospheric dry deposition on ocean productivity

    Science.gov (United States)

    Wang, F. J.; Chen, Y.; Guo, Z. G.; Gao, H. W.; Mackey, K. R.; Yao, X. H.; Zhuang, G. S.; Paytan, A.

    2017-03-01

    Atmospheric deposition can provide nutrients and potential toxicants to marine ecosystem, hence affecting ocean net primary productivity (NPP). Nonetheless, the interactive effects of mixed aerosol components on phytoplankton have rarely been reported. Here we explored the combined effects of iron (Fe) and copper (Cu) on NPP over the East China Sea. In aerosol addition mesocosm experiments, phytoplankton growth was suppressed under high aerosol Cu but was increased when high Cu was accompanied by high Fe in aerosols. A time series of soluble aerosol Fe and Cu deposition was obtained and compared to regional chlorophyll a (Chl a) abundances from Moderate Resolution Imaging Spectroradiometer/Aqua. Strong positive correlations were observed between the dry flux ratios of soluble Fe/Cu and Chl a abundances in the large offshore area, whereas these variables were uncoupled in coastal regions where riverine input and upwelling dominated the biogeochemistry. Current work provides insight into the complex linkage between atmospheric deposition and marine productivity.

  12. Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Pansila, P. [Graduate School of Science and Engineering, Yamagata University, 4-3-16 Jonan, Yonezawa 992-8510 (Japan); Kanomata, K. [Graduate School of Science and Engineering, Yamagata University, 4-3-16 Jonan, Yonezawa 992-8510 (Japan); Japan Society for the Promotion of Science, 5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083 (Japan); Miura, M. [Graduate School of Science and Engineering, Yamagata University, 4-3-16 Jonan, Yonezawa 992-8510 (Japan); Ahmmad, B.; Kubota, S. [Graduate School of Science and Engineering, Yamagata University, 4-3-16 Jonan, Yonezawa 992-8510 (Japan); CREST, Japan Science and Technology Agency, 4-3-16 Jonan, Yonezawa 992-8510 (Japan); Hirose, F., E-mail: fhirose@yz.yamagata-u.ac.jp [Graduate School of Science and Engineering, Yamagata University, 4-3-16 Jonan, Yonezawa 992-8510 (Japan); CREST, Japan Science and Technology Agency, 4-3-16 Jonan, Yonezawa 992-8510 (Japan)

    2015-12-01

    Highlights: • We discuss the reaction mechanism of the low temperature GaN ALD. • The plasma-excited NH{sub 3} is effective in the nitridation of the TMG saturated GaN surface with surface temperatures in excess of 100 °C. • The temperature controlled ALD of GaN is examined using RT-TMG adsorption and plasma-excited NH{sub 3} treatment with the temperature of 115 °C. - Abstract: Fundamental surface reactions in the atomic layer deposition of GaN with trimethylgallium (TMG) and plasma-excited NH{sub 3} are investigated by multiple-internal-reflection infrared absorption spectroscopy (MIR-IRAS) at surface temperatures varying from room temperature (RT) to 400 °C. It is found that TMG is saturated at RT on GaN surfaces when the TMG exposure exceeds 8 × 10{sup 4} Langmuir (L), where 1 L corresponds to 1.33 × 10{sup −4} Pa s (or 1.0 × 10{sup −6} Torr s), and its saturation density reaches the maximum value at RT. Nitridation with the plasma-excited NH{sub 3} on the TMG-saturated GaN surface is investigated by X-ray photoelectron spectroscopy (XPS). The nitridation becomes effective at surface temperatures in excess of 100 °C. The reaction models of TMG adsorption and nitridation on the GaN surface are proposed in this paper. Based on the surface analysis, a temperature-controlled ALD process consisting of RT-TMG adsorption and nitridation at 115 °C is examined, where the growth per cycle of 0.045 nm/cycle is confirmed. XPS analysis indicates that all N atoms are bonded as GaN. Atomic force microscopy indicates an average roughness of 0.23 nm. We discuss the reaction mechanism of GaN ALD in the low-temperature region at around 115 °C with TMG and plasma-excited NH{sub 3}.

  13. Global Patterns in Human Consumption of Net Primary Production

    Science.gov (United States)

    Imhoff, Marc L.; Bounoua, Lahouari; Ricketts, Taylor; Loucks, Colby; Harriss, Robert; Lawrence William T.

    2004-01-01

    The human population and its consumption profoundly affect the Earth's ecosystems. A particularly compelling measure of humanity's cumulative impact is the fraction of the planet's net primary production that we appropriate for our Net primary production-the net amount of solar energy converted to plant organic matter through photosynthesis-can be measured in units of elemental carbon and represents the primary food energy source for the world's ecosystems. Human appropriation of net primary production, apart from leaving less for other species to use, alters the composition of the atmosphere, levels of biodiversity, flows within food webs and the provision of important primary production required by humans and compare it to the total amount generated on the landscape. We then derive a spatial ba!mce sheet of net primary production supply and demand for the world. We show that human appropriation of net primary production varies spatially from almost zero to many times the local primary production. These analyses reveal the uneven footprint of human consumption and related environmental impacts, indicate the degree to which human populations depend on net primary production "imports" and suggest policy options for slowing future growth of human appropriation of net primary production.

  14. Investigating the Controls on the Growth of Mississippi Valley-Type Zn-Pb Deposits in the U.S. Mid-Continent from Fluid Inclusion and Isotopic Analyses of Trace Occurrences of Mineralization

    Science.gov (United States)

    Field, J. D.; Appold, M. S.; Coveney, R. M., Jr.

    2016-12-01

    Mississippi Valley-type (MVT) Zn-Pb mineralization is common in the Paleozoic carbonate rocks of the U.S. mid-continent. Most occurrences consist of gram-scale quantities of sulfide minerals. However, in rare instances, millions of tons of Zn and Pb have been deposited at grades of several percent. These rare ore deposits have been well characterized. In contrast, little is known about the trace (gram-scale) MVT occurrences. The focus of the present study was to characterize some of these trace occurrences to compare to MVT ore deposits to look for controls on deposit growth. Results of the study show that compared to mid-continent MVT ore deposits, trace MVT occurrences have slightly lower fluid inclusion homogenization temperatures, K/Na and Ca/Mg ratios, similar Sr/Na ratios, a wider range of salinities, and lower methane concentrations. Fluid inclusion Pb concentrations could not be reliably quantified, but sphalerite matrix Pb concentrations in trace occurrences are within the range of MVT ore districts. The Pb isotope compositions of sulfide minerals in trace MVT occurrences in the western mid-continent are less radiogenic and in the northeastern mid-continent are more radiogenic than sulfide minerals from MVT ore districts. Sulfide minerals in trace MVT occurrence have much more variable and on the whole lighter sulfur isotope compositions than their MVT ore district counterparts. Collectively, the results of the present study indicate that the fluids that formed trace MVT occurrences in the U.S. mid-continent generally resemble the fluids that formed MVT ore deposits. Trace MVT occurrences considered in the present study may have formed at slightly shallower depths under more oxidizing conditions from fluids that were more frequently diluted by meteoric water than MVT ore deposits. Trace MVT occurrences in the western mid-continent appear to have incorporated less radiogenic basement Pb than MVT ore deposits or trace occurrences in the northeastern mid

  15. Linear Logic on Petri Nets

    DEFF Research Database (Denmark)

    Engberg, Uffe Henrik; Winskel, Glynn

    This article shows how individual Petri nets form models of Girard's intuitionistic linear logic. It explores questions of expressiveness and completeness of linear logic with respect to this interpretation. An aim is to use Petri nets to give an understanding of linear logic and give some apprai...

  16. Reference Guide Microsoft.NET

    NARCIS (Netherlands)

    Zee M van der; Verspaij GJ; Rosbergen S; IMP; NMD

    2003-01-01

    Developers, administrators and managers can get more understanding of the .NET technology with this report. They can also make better choices how to use this technology. The report describes the results and conclusions of a study of the usability for the RIVM of this new generation .NET development

  17. Net neutrality and audiovisual services

    NARCIS (Netherlands)

    van Eijk, N.; Nikoltchev, S.

    2011-01-01

    Net neutrality is high on the European agenda. New regulations for the communication sector provide a legal framework for net neutrality and need to be implemented on both a European and a national level. The key element is not just about blocking or slowing down traffic across communication

  18. A Small Universal Petri Net

    Directory of Open Access Journals (Sweden)

    Dmitry A. Zaitsev

    2013-09-01

    Full Text Available A universal deterministic inhibitor Petri net with 14 places, 29 transitions and 138 arcs was constructed via simulation of Neary and Woods' weakly universal Turing machine with 2 states and 4 symbols; the total time complexity is exponential in the running time of their weak machine. To simulate the blank words of the weakly universal Turing machine, a couple of dedicated transitions insert their codes when reaching edges of the working zone. To complete a chain of a given Petri net encoding to be executed by the universal Petri net, a translation of a bi-tag system into a Turing machine was constructed. The constructed Petri net is universal in the standard sense; a weaker form of universality for Petri nets was not introduced in this work.

  19. A regional-scale survey and analysis of forest growth and mortality as affected by site and stand factors and acidic deposition

    Science.gov (United States)

    Robert T. Brooks

    1994-01-01

    Regression analyses were used to identify factors most closely related to species growth and mortality on continuous forest survey plots in Pennsylvania. In 1985, 200 plots with two prior measurements (in the 1960s and 1970s) were selected and measured for a third time to determine periodic forest growth and mortality rates. Growth and mortality were analyzed for...

  20. Simultaneous monitoring of biofilm growth, microbial activity, and inorganic deposits on surfaces with an in situ, online, real-time, non-destructive, optical sensor.

    Science.gov (United States)

    Strathmann, Martin; Mittenzwey, Klaus-Henrik; Sinn, Gert; Papadakis, Wassilios; Flemming, Hans-Curt

    2013-01-01

    Deposits on surfaces in water-bearing systems, also known as 'fouling', can lead to substantial losses in the performance of industrial processes as well as a decreased product quality. Early detection and localization of such deposits can, to a considerable extent, save such losses. However, most of the surfaces that become fouled, for example, in process water pipes, membrane systems, power plants, and food and beverage industries, are difficult to access and analyses conducted on the water phase do not reveal the site or extent of deposits. Furthermore, it is of interest to distinguish biological from non-biological deposits. Although they usually occur together, different countermeasures are necessary. Therefore, sensors are required that indicate the development of surface fouling in real-time, non-destructively, and in situ, preferably allowing for discrimination between chemical and/or biological deposits. In this paper, an optical deposit sensor is presented which fulfills these requirements. Based on multiple fluorescence excitation emission matrix analysis, it detects autofluorescence of amino acids as indicators of biomass. Autofluorescence of nicotinamide adenine dinucleotide + hydrogen is interpreted as an indicator of biological activity, thus it acts as a viability marker, making the method suited for assessing the efficacy of disinfection treatments. Scattering signals from abiotic deposits such as calcium carbonate or corrosion products can clearly be distinguished from biotic substances and monitored separately. The sensor provides an early warning of fouling, allowing for timely countermeasures to be deployed. It also provides an assessment of the success of cleaning treatments and is a promising tool for integrated antifouling strategies.