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Sample records for nbn meander nanowires

  1. Study of thermal response of superconducting NbN meander line by using 20 ps pulse laser

    International Nuclear Information System (INIS)

    Miki, Shigehito; Fujiwara, Daisuke; Simakage, Hisashi; Kawakami, Akira; Wang Zhen; Satoh, Kazuo; Yotsuya, Tsutomu; Ishida, Takekazu

    2005-01-01

    The thermal response of a superconducting NbN thin-film meander line was studied by irradiating with a 20 ps pulse laser. A 10 nm-thick NbN thin film was prepared by dc magnetron sputtering and then processed to fabricate a 3 μm-wide, 125.5 mm-long meander line. The device was placed in a 4 K refrigerator, and the bias temperature was kept below the critical temperature T c . The end of an optical fiber was fixed at the front of a meander line, which was then directly irradiated by using the 20 ps pulse laser. The output voltage was observed with a digital oscilloscope and a low-noise amplifier. The output signals of the thermal response were clearly observed

  2. NbN nanowire optical detectors for high speed applications

    International Nuclear Information System (INIS)

    Quaranta, O; Pagano, S; Ejrnaes, M; Nappi, C; Pessina, E; Fontana, F

    2008-01-01

    We have developed a novel geometry for single photon optical detectors (SSPD) based on NbN nanowires. Traditionally the SSPD are realized in a meander structure in order to realize a reasonable (few square microns) collecting area. This has the disadvantage of generating a large detector inductance, mostly of kinetic origin, that strongly limits the detector operation in high speed applications, such as telecommunication. Moreover the extreme aspect ratio of the detector (a nanowire a fraction of mm long and 100 nm wide) puts strong requirements on the nanofabrication processes, with negative effects on the production yield. Our novel proposed geometry is based on a parallel stripes configuration designed in such a way that the light induced switching of a single stripe generates the switching of all the other through a cascade mechanism. The net result is an SSPD device that has a much lower intrinsic inductance, and consequently a much wider bandwidth (up to 10 GHz range). Moreover the signal amplitude generated is much larger than that of traditional SSPD, due to the contribution of all the parallel stripe. We present here the design and results of numerical simulation of the response of this novel type of SSPD. In particular we discuss of the design solutions that allow the cascade operation of the detector, by realizing a very fast and synchronous switching of all the parallel lines. Key issues, such as the optimal number of parallel lines, with respect to fabrication and operation constraints of the detectors are also discussed

  3. Large-area NbN superconducting nanowire avalanche photon detectors with saturated detection efficiency

    Science.gov (United States)

    Murphy, Ryan P.; Grein, Matthew E.; Gudmundsen, Theodore J.; McCaughan, Adam; Najafi, Faraz; Berggren, Karl K.; Marsili, Francesco; Dauler, Eric A.

    2015-05-01

    Superconducting circuits comprising SNSPDs placed in parallel—superconducting nanowire avalanche photodetectors, or SNAPs—have previously been demonstrated to improve the output signal-to-noise ratio (SNR) by increasing the critical current. In this work, we employ a 2-SNAP superconducting circuit with narrow (40 nm) niobium nitride (NbN) nanowires to improve the system detection efficiency to near-IR photons while maintaining high SNR. Additionally, while previous 2-SNAP demonstrations have added external choke inductance to stabilize the avalanching photocurrent, we show that the external inductance can be entirely folded into the active area by cascading 2-SNAP devices in series to produce a greatly increased active area. We fabricated series-2-SNAP (s2-SNAP) circuits with a nanowire length of 20 μm with cascades of 2-SNAPs providing the choke inductance necessary for SNAP operation. We observed that (1) the detection efficiency saturated at high bias currents, and (2) the 40 nm 2-SNAP circuit critical current was approximately twice that for a 40 nm non-SNAP configuration.

  4. Thin NbN film structures on SOI for SNSPD

    Energy Technology Data Exchange (ETDEWEB)

    Il' in, Konstantin; Kurz, Stephan; Henrich, Dagmar; Hofherr, Matthias; Siegel, Michael [IMS, KIT, Karlsruhe (Germany); Semenov, Alexei; Huebers, Heinz-Wilhelm [DLR, Berlin (Germany)

    2012-07-01

    Superconducting Nanowire Single-Photon Detectors (SNSPD) made from ultra-thin NbN films on sapphire demonstrate almost 100% intrinsic detection efficiency (DE). However the system DE values is less than 10% mostly limited by a very low absorptance of NbN films thinner than 5 nm. Integration of SNSPD in Si photonic circuit is a promising way to overcome this problem. We present results on optimization of technology of thin NbN film nanostructures on SOI (Silicon on Insulator) substrate used in Si photonics technology. Superconducting and normal state properties of these structures important for SNSPD development are presented and discussed.

  5. Fiber-coupled NbN superconducting single-photon detectors for quantum correlation measurements

    NARCIS (Netherlands)

    Slysz, W.; Wegrzecki, M.; Bar, J.; Grabiec, P.; Gorska, M.; Reiger, E.; Dorenbos, S.; Zwiller, V.; Milostnaya, I.; Minaeva, O.

    2007-01-01

    We have fabricated fiber-coupled superconducting single-photon detectors (SSPDs), designed for quantum-correlationtype experiments. The SSPDs are nanostructured (~100-nm wide and 4-nm thick) NbN superconducting meandering stripes, operated in the 2 to 4.2 K temperature range, and known for ultrafast

  6. Microfiber-coupled superconducting nanowire single-photon detector for near-infrared wavelengths.

    Science.gov (United States)

    You, Lixing; Wu, Junjie; Xu, Yingxin; Hou, Xintong; Fang, Wei; Li, Hao; Zhang, Weijun; Zhang, Lu; Liu, Xiaoyu; Tong, Limin; Wang, Zhen; Xie, Xiaoming

    2017-12-11

    High-performance superconducting nanowire single-photon detectors (SNSPDs) have facilitated numerous experiments and applications, particularly in the fields of modern quantum optics and quantum communication. Two kinds of optical coupling methods have thus far been developed for SNSPDs: one produces standard fiber-coupled SNSPDs in which the fibers vertically illuminate the meandered nanowires; the other produces waveguide-coupled SNSPDs in which nanowires are fabricated on the surface of a waveguide that guides photons, and the fibers are coupled to the waveguide. In this paper, we report on first experimental demonstration of a new type of SNSPD that is coupled with a microfiber (MF). Photons are guided by the MF and are evanescently absorbed by the nanowires of the SNSPD when the MF is placed on top of superconducting NbN nanowires. Room-temperature optical experiments indicated that this device has a coupling efficiency of up to 90% when a 1.3 μm-diameter MF is used for light with wavelength of 1550 nm. We were also able to demonstrate that our MF-coupled detector achieved system detection efficiencies of 50% and 20% at incident wavelengths of 1064 and 1550 nm, respectively, for a 2 μm-diameter MF at 2.2K. We expect that MF-coupled SNSPDs may show both high efficiency and broadband characteristics upon optimization and will be used for various novel applications, such as micro/nano-fiber optics.

  7. Superconducting NbN single-photon detectors on GaAs with an AlN buffer layer

    Energy Technology Data Exchange (ETDEWEB)

    Schmidt, Ekkehart; Merker, Michael; Ilin, Konstantin; Siegel, Michael [Institut fuer Mikro- und Nanoelektronische Systeme (IMS), Karlsruher Institut fuer Technologie, Hertzstrasse 16, 76187 Karlsruhe (Germany)

    2015-07-01

    GaAs is the material of choice for photonic integrated circuits. It allows the monolithic integration of single-photon sources like quantum dots, waveguide based optical circuits and detectors like superconducting nanowire single-photon detectors (SNSPDs) onto one chip. The growth of high quality NbN films on GaAs is challenging, due to natural occurring surface oxides and the large lattice mismatch of about 27%. In this work, we try to overcome these problems by the introduction of a 10 nm AlN buffer layer. Due to the buffer layer, the critical temperature of 6 nm thick NbN films was increased by about 1.5 K. Furthermore, the critical current density at 4.2 K of NbN flim deposited onto GaAs with AlN buffer is 50% higher than of NbN film deposited directly onto GaAs substrate. We successfully fabricated NbN SNSPDs on GaAs with a AlN buffer layer. SNSPDs were patterned using electron-beam lithography and reactive-ion etching techniques. Results on the study of detection efficiency and jitter of a NbN SNSPD on GaAs, with and without AlN buffer layer will be presented and discussed.

  8. Effect of the wire geometry and an externally applied magnetic field on the detection efficiency of superconducting nanowire single-photon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Lusche, Robert; Semenov, Alexey; Huebers, Heinz-Willhelm [DLR, Institut fuer Planetenforschung, Berlin (Germany); Ilin, Konstantin; Siegel, Michael [Karlsruher Institut fuer Technologie (Germany); Korneeva, Yuliya; Trifonov, Andrey; Korneev, Alexander; Goltsman, Gregory [Moscow State Pedagogical University (Russian Federation)

    2013-07-01

    The interest in single-photon detectors in the near-infrared wavelength regime for applications, e.g. in quantum cryptography has immensely increased in the last years. Superconducting nanowire single-photon detectors (SNSPD) already show quite reasonable detection efficiencies in the NIR which can even be further improved. Novel theoretical approaches including vortex-assisted photon counting state that the detection efficiency in the long wavelength region can be enhanced by the detector geometry and an applied magnetic field. We present spectral measurements in the wavelength range from 350-2500 nm of the detection efficiency of meander-type TaN and NbN SNSPD with varying nanowire line width from 80 to 250 nm. Due to the used experimental setup we can accurately normalize the measured spectra and are able to extract the intrinsic detection efficiency (IDE) of our detectors. The results clearly indicate an improvement of the IDE depending on the wire width according to the theoretic models. Furthermore we experimentally found that the smallest detectable photon-flux can be increased by applying a small magnetic field to the detectors.

  9. Fluctuations and dark count rates in superconducting NbN single-photon detectors

    International Nuclear Information System (INIS)

    Engel, Andreas; Semenov, Alexei; Huebers, Heinz-Wilhelm; Il'in, Kostya; Siegel, Michael

    2005-01-01

    We measured the temperature- and current-dependence of dark count rates of a superconducting singlephoton detector. The detector's key element is a 84 nm wide meander strip line fabricated from a 5 nm thick NbN film. Due to its reduced dimensions various types of fluctuations can cause temporal and localized transitions into a resistive state leading to dark count events. Adopting a recent refinement of the hotspot model we achieve a satisfying description of the experimental dark count rates taking into account fluctuations of the Cooper-pair density and current-assisted unbinding of vortex-antivortex pairs. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Multi-channeled NbN superconducting single photon detectors (SSPDs) system with NbN meander nanowires

    International Nuclear Information System (INIS)

    Fujiwara, Mikio; Sasaki, Masahide; Miki, Shigehito; Wang Zhen

    2009-01-01

    A superconducting single photon detector (SSPD) is promising candidate of the detector in a quantum key distribution (QKD) system, because of its low dark count and high speed repetition rate. We have developed the SSPD system cooled by a GM cryocooler. In this system, and the work surface can be cooled 2.95 K and up to 6 SSPDs can be installed. The active areas of SSPDs are 10x10 μm 2 or 20x20 μm 2 , and the system detection efficiency at dark count rate of 100 Hz reached 2.6% at a wavelength of 1550 nm.

  11. Amplitude distributions of dark counts and photon counts in NbN superconducting single-photon detectors integrated with the HEMT readout

    Energy Technology Data Exchange (ETDEWEB)

    Kitaygorsky, J. [Kavli Institute of Nanoscience Delft, Delft University of Technology, 2600 GA Delft (Netherlands); Department of Electrical and Computer Engineering and Laboratory for Laser Energetics, University of Rochester, Rochester, NY 14627-0231 (United States); Słysz, W., E-mail: wslysz@ite.waw.pl [Institute of Electron Technology, PL-02 668 Warsaw (Poland); Shouten, R.; Dorenbos, S.; Reiger, E.; Zwiller, V. [Kavli Institute of Nanoscience Delft, Delft University of Technology, 2600 GA Delft (Netherlands); Sobolewski, Roman [Department of Electrical and Computer Engineering and Laboratory for Laser Energetics, University of Rochester, Rochester, NY 14627-0231 (United States)

    2017-01-15

    Highlights: • A new operation regime of NbN superconducting single-photon detectors (SSPDs). • A better understanding of the origin of dark counts generated by the detector. • A promise of PNR functionality in SSPD measurements. - Abstract: We present a new operation regime of NbN superconducting single-photon detectors (SSPDs) by integrating them with a low-noise cryogenic high-electron-mobility transistor and a high-load resistor. The integrated sensors are designed to get a better understanding of the origin of dark counts triggered by the detector, as our scheme allows us to distinguish the origin of dark pulses from the actual photon pulses in SSPDs. The presented approach is based on a statistical analysis of amplitude distributions of recorded trains of the SSPD photoresponse transients. It also enables to obtain information on energy of the incident photons, as well as demonstrates some photon-number-resolving capability of meander-type SSPDs.

  12. Ultrathin NbN film superconducting single-photon detector array

    International Nuclear Information System (INIS)

    Smirnov, K; Korneev, A; Minaeva, O; Divochiy, A; Tarkhov, M; Ryabchun, S; Seleznev, V; Kaurova, N; Voronov, B; Gol'tsman, G; Polonsky, S

    2007-01-01

    We report on the fabrication process of the 2 x 2 superconducting single-photon detector (SSPD) array. The SSPD array is made from ultrathin NbN film and is operated at liquid helium temperatures. Each detector is a nanowire-based structure patterned by electron beam lithography process. The advances in fabrication technology allowed us to produce highly uniform strips and preserve superconducting properties of the unpatterned film. SSPD exhibit up to 30% quantum efficiency in near infrared and up to 1% at 5-μm wavelength. Due to 120 MHz counting rate and 18 ps jitter, the time-domain multiplexing read-out is proposed for large scale SSPD arrays. Single-pixel SSPD has already found a practical application in non-invasive testing of semiconductor very-large scale integrated circuits. The SSPD significantly outperformed traditional single-photon counting avalanche diodes

  13. Tunneling spectroscopy in NbN based Josephson junctions

    International Nuclear Information System (INIS)

    Chicault, R.; Villegier, J.C.

    1984-08-01

    Tunneling spectroscopy in high quality NbN-oxide-Pb(In) diodes offers a direct observation of various NbN and Pb phonon frequences as other vibrating modes existing near the tunnel barrier. The large number of peaks attribuated to dips in the transverses and longitudinal acoustic branches of NbN dispersion curves are found to confirm the previous theory developing the contribution of these modes to the strong coupling and high Tc behavior of NbN

  14. NbN thin films for superconducting radio frequency cavities

    Science.gov (United States)

    Roach, W. M.; Skuza, J. R.; Beringer, D. B.; Li, Z.; Clavero, C.; Lukaszew, R. A.

    2012-12-01

    NbN thin films have the potential to be incorporated into radio frequency cavities in a multilayer coating to overcome the fundamental field gradient limit of 50 MV m-1 for the bulk niobium based technology that is currently implemented in particle accelerators. In addition to having a larger critical field value than bulk niobium, NbN films develop smoother surfaces which are optimal for cavity performance and lead to fewer losses. Here, we present a study on the correlation of film deposition parameters, surface morphology, microstructure, transport properties and superconducting properties of NbN thin films. We have achieved films with bulk-like lattice parameters and superconducting transition temperatures. These NbN films have a lower surface roughness than similarly grown niobium films of comparable thickness. The potential application of NbN thin films in accelerator cavities is discussed.

  15. NbN thin films for superconducting radio frequency cavities

    International Nuclear Information System (INIS)

    Roach, W M; Clavero, C; Lukaszew, R A; Skuza, J R; Beringer, D B; Li, Z

    2012-01-01

    NbN thin films have the potential to be incorporated into radio frequency cavities in a multilayer coating to overcome the fundamental field gradient limit of 50 MV m −1 for the bulk niobium based technology that is currently implemented in particle accelerators. In addition to having a larger critical field value than bulk niobium, NbN films develop smoother surfaces which are optimal for cavity performance and lead to fewer losses. Here, we present a study on the correlation of film deposition parameters, surface morphology, microstructure, transport properties and superconducting properties of NbN thin films. We have achieved films with bulk-like lattice parameters and superconducting transition temperatures. These NbN films have a lower surface roughness than similarly grown niobium films of comparable thickness. The potential application of NbN thin films in accelerator cavities is discussed. (paper)

  16. Emergence of Quantum Phase-Slip Behaviour in Superconducting NbN Nanowires: DC Electrical Transport and Fabrication Technologies

    Directory of Open Access Journals (Sweden)

    Nicolas G. N. Constantino

    2018-06-01

    Full Text Available Superconducting nanowires undergoing quantum phase-slips have potential for impact in electronic devices, with a high-accuracy quantum current standard among a possible toolbox of novel components. A key element of developing such technologies is to understand the requirements for, and control the production of, superconducting nanowires that undergo coherent quantum phase-slips. We present three fabrication technologies, based on using electron-beam lithography or neon focussed ion-beam lithography, for defining narrow superconducting nanowires, and have used these to create nanowires in niobium nitride with widths in the range of 20–250 nm. We present characterisation of the nanowires using DC electrical transport at temperatures down to 300 mK. We demonstrate that a range of different behaviours may be obtained in different nanowires, including bulk-like superconducting properties with critical-current features, the observation of phase-slip centres and the observation of zero conductance below a critical voltage, characteristic of coherent quantum phase-slips. We observe critical voltages up to 5 mV, an order of magnitude larger than other reports to date. The different prominence of quantum phase-slip effects in the various nanowires may be understood as arising from the differing importance of quantum fluctuations. Control of the nanowire properties will pave the way for routine fabrication of coherent quantum phase-slip nanowire devices for technology applications.

  17. Neutron irradiation of sputtered NbN films

    International Nuclear Information System (INIS)

    Weber, H.W.; Gregshammer, P.; Gray, K.E.; Kampwirth, R.T.

    1989-01-01

    In addition to the excellent high-field superconducting properties of NbN, it is the strain and radiation tolerance, measured in bulk NbN, which makes the material so attractive for large high-field magnets, especially for fusion applications. The authors report neutron irradiation experiments on sputtered NbN films, up to a fluence of 10/sup 23/ m/sup -2/ (E > 0.1 MeV), which prove that NbN films are also extremely radiation-hard high-field superconductors. Both the transition temperatures, T/sub c/, and the normal state resistivities show only small changes with neutron fluence. Concerning the critical current densities, j/sub c/, degradations by as much as 30% are observed at low fields, whereas in an intermediate field range (11-15 T) virtually no change of j/sub c/ and at high fields near 20 T even an increase of j/sub c/ are found. The latter observation is ascribed to a radiation-induced increase of the upper critical field, B/sub c2/, and to the occurence of peak effects near B/sub c2/

  18. THz spectroscopy on superconducting NbN thin films

    Energy Technology Data Exchange (ETDEWEB)

    Daschke, Lena; Pracht, Uwe S.; Dressel, Martin; Scheffler, Marc [1. Physikalisches Institut, Universitaet Stuttgart (Germany); Ilin, Konstantin S.; Siegel, Michael [Institut fuer Mikro- und Nanoelektronische Systeme, Karlsruher Institut fuer Technologie (Germany)

    2015-07-01

    Epitaxial thin-film niobium nitride (NbN) is a conventional BCS superconductor. In presence of strong disorder, however, electronic inhomogeneities appear, which is not fully understood yet. To obtain a better insight into the physics of such disordered materials, studies on model systems such as structurally tailored films might be useful. Furthermore, disordered NbN films are used for single-photon detection devices, whose proper performance depends on a profound understanding of the superconducting properties. The studied NbN films have a T{sub c} ranging from 10 to 15 K and the superconducting energy gap is easily accessible with THz spectroscopy (0.4 - 5.6 meV). We investigate thin films of NbN sputtered on a sapphire substrate. With a Mach-Zehnder interferometer we measure the amplitude and phase shift of radiation transmitted through the thin-film sample. From there we can determine the real and imaginary parts of the optical conductivity. These results give information about the energy gap, Cooper pair density, and quasiparticle dynamics, including the temperature evolution of these quantities. We found that a film with 10 nm thickness roughly follows the BCS behavior, as expected. We will present results of our measurements on several different NbN samples.

  19. Designing and Assessing Restored Meandering River Planform Using RVR Meander

    Science.gov (United States)

    Langendoen, E. J.; Abad, J. D.; Motta, D.; Frias, C. E.; Wong, M.; Barnes, B. J.; Anderson, C. D.; Garcia, M. H.; MacDonald, T. E.

    2013-12-01

    The ongoing modification and resulting reduction in water quality of U.S. rivers have led to a significant increase in river restoration projects over the last two decades. The increased interest in restoring degraded streams, however, has not necessarily led to improved stream function. Palmer and Allan (2005) found that many restoration projects fail to achieve their objectives due to the lack of policies to support restoration standards, to promote proven methods and to provide basic data needed for planning and implementation. Proven models of in-stream and riparian processes could be used not only to guide the design of restoration projects but also to assess both pre- and post-project indicators of ecological integrity. One of the most difficult types of river restoration projects concern reconstructing a new channel, often with an alignment and channel form different from those of the degraded pre-project channel. Recreating a meandering planform to provide longitudinal and lateral variability of flow and bed morphology to improve in-stream aquatic habitat is often desired. Channel meander planform is controlled by a multitude of variables, for example channel width to depth ratio, radius of curvature to channel width ratio, bankfull discharge, roughness, bed-material physical characteristics, bed material transport, resistance to erosion of the floodplain soils, riparian vegetation, etc. Therefore, current practices that use simple, empirically based relationships or reference reaches have led to failure in several instances, for example a washing out of meander bends or a highly unstable planform, because they fail to address the site-specific conditions. Recently, progress has been made to enhance a physically- and process-based model, RVR Meander, for rapid analysis of meandering river morphodynamics with reduced empiricism. For example, lateral migration is based on measurable physical properties of the floodplain soils and riparian vegetation versus

  20. Influence of Meander Confinement on Hydro-Morphodynamics of a Cohesive Meandering Channel

    Directory of Open Access Journals (Sweden)

    Parna Parsapour-Moghaddam

    2018-03-01

    Full Text Available Despite several decades of intensive study of the morphological changes in meandering rivers, less attention has been paid to confined meanders. This paper studies the hydro-morphodynamics of two adjacent sub-reaches of a meandering creek, located in the City of Ottawa, Canada. Both of these sub-reaches are meandering channels with cohesive bed and banks, but one is confined by a railway embankment. Field reconnaissance revealed distinct differences in the morphological characteristics of the sub-reaches. To further study this, channel migration and morphological changes of the channel banks along each of these sub-reaches were analyzed by comparing the historical aerial photography (2004, 2014, light detection and ranging (LIDAR data (2006, bathymetric data obtained from a total station survey (2014, and field examination. Moreover, two different spatially intensive acoustic Doppler current profiler (ADCP surveys were conducted in the study area to find the linkage between the hydrodynamics and morphological changes in the two different sub-reaches. The unconfined sub-reach is shown to have a typical channel migration pattern with deposition on the inner bank and erosion on the outer bank of the meander bend. The confined sub-reach, on the other hand, experienced greater bank instabilities than the unconfined sub-reach. The average rate of bank retreat was 0.2 m/year in the confined sub-reach whereas it was lower (0.08 m/year in the unconfined sampling reach. In the confined sub-reach, an irregular meandering pattern occurred by the evolution of a concave-bank bench, which was caused by reverse flow eddies. The sinuosity of the confined sub-reach decreased from 1.55 to 1.49 in the 10-year study period. The results of the present study demonstrate the physical mechanisms by which meander confinement can change the meandering pattern and morphological characteristics of a cohesive clay bed creek.

  1. Dynamic wake meandering modeling

    Energy Technology Data Exchange (ETDEWEB)

    Larsen, Gunner C.; Aagaard Madsen, H.; Bingoel, F. (and others)

    2007-06-15

    We present a consistent, physically based theory for the wake meandering phenomenon, which we consider of crucial importance for the overall description of wind turbine loadings in wind farms. In its present version the model is confined to single wake situations. The model philosophy does, however, have the potential to include also mutual wake interaction phenomenons. The basic conjecture behind the dynamic wake meandering model is that wake transportation in the atmospheric boundary layer is driven by the large scale lateral- and vertical turbulence components. Based on this conjecture a stochastic model of the downstream wake meandering is formulated. In addition to the kinematic formulation of the dynamics of the 'meandering frame of reference', models characterizing the mean wake deficit as well as the added wake turbulence, described in the meandering frame of reference, are an integrated part the model complex. For design applications, the computational efficiency of wake deficit prediction is a key issue. Two computationally low cost models are developed for this purpose. The character of the added wake turbulence, generated by the up-stream turbine in the form of shed and trailed vorticity, has been approached by analytical as well as by numerical studies. The dynamic wake meandering philosophy has been verified by comparing model predictions with extensive full-scale measurements. These comparisons have demonstrated good agreement, both qualitatively and quantitatively, concerning both flow characteristics and turbine load characteristics. Contrary to previous attempts to model wake loading, the dynamic wake meandering approach opens for a unifying description in the sense that turbine power and load aspects can be treated simultaneously. This capability is a direct and attractive consequence of the model being based on the underlying physical process, and it potentially opens for optimization of wind farm topology, of wind farm operation as

  2. Impact of meander geometry and stream flow events on residence times and solute transport in the intra-meander flow

    Science.gov (United States)

    Nasir Mahmood, Muhammad; Schmidt, Christian; Trauth, Nico

    2017-04-01

    Stream morphological features, in combination with hydrological variability play a key role in water and solute exchange across surface and subsurface waters. Meanders are prominent morphological features within stream systems which exhibit unique hydrodynamics. The water surface elevation difference across the inner bank of a meander induces lateral hyporheic exchange within the intra-meander region. This hyporheic flow is characterized by considerably prolonged flow paths and residence times (RT) compared to smaller scales of hyporheic exchange. In this study we examine the impact of different meander geometries on the intra-meander hyporheic flow field and solute mobilization under both steady state and transient flow conditions. We developed a number of artificial meander shape scenarios, representing various meander evolution stages, ranging from a typical initial to advanced stage (near cut off ) meander. Three dimensional steady state numerical groundwater flow simulations including the unsaturated zone were performed for the intra-meander region. The meandering stream was implemented in the model by adjusting the top layers of the modelling domain to the streambed elevation and assigning linearly decreasing head boundary conditions to the streambed cells. Residence times for the intra-meander region were computed by advective particle tracking across the inner bank of meander. Selected steady state cases were extended to transient flow simulations to evaluate the impact of stream discharge events on the temporal behavior of the water exchange and solute transport in the intra-meander region. The transient stream discharge was simulated for a number of discharge events of variable duration and peak height using the surface water model HEC-RAS. Transient hydraulic heads obtained from the surface water model were applied as transient head boundary conditions to the streambed cells of the groundwater model. A solute concentration source was added in the

  3. Evolution of superconducting properties with disorder in epitaxial NbN films

    International Nuclear Information System (INIS)

    Chockalingam, S P; Chand, Madhavi; Jesudasan, John; Raychaudhuri, Pratap; Tripathi, Vikram

    2009-01-01

    NbN is a conventional BCS superconductor in which disorder can be tuned from moderately clean limit to dirty limit without affecting its epitaxial nature. We studied the superconducting properties of epitaxial NbN films of different disorder characterized by k F l ranging from 8.77 to 2.56 through the transport measurements. Using reactive magnetron sputtering NbN films of different disorder are deposited by varying the sputtering power and amount of N 2 in Ar:N 2 mixture of sputtering gas. The disorder parameter k F l is obtained from the carrier density (n) and the resistivity (ρ) of the films. NbN films with higher disorder have lower transition temperature (T c ) and larger resistivity which decreases with decreasing disorder. The carrier density determined from Hall measurements show that highly disordered films have lower carrier density and vice versa. Our studies show that NbN is a good system to investigate the effects of disorder on superconductivity where the superconducting properties evolve with the disorder in thin films.

  4. Terahertz Mixing Characteristics of NbN Superconducting Tunnel Junctions and Related Astronomical Observations

    Science.gov (United States)

    Li, J.

    2010-01-01

    High-sensitivity superconducting SIS (superconductor-insulator-superconductor) mixers are playing an increasingly important role in the terahertz (THz) astronomical observation, which is an emerging research frontier in modern astrophysics. Superconducting SIS mixers with niobium (Nb) tunnel junctions have reached a sensitivity close to the quantum limit, but have a frequency limit about 0.7 THz (i.e., gap frequency of Nb tunnel junctions). Beyond this frequency Nb superconducting films will absorb energetic photons (i.e., energy loss) to break Cooper pairs, thereby resulting in significant degradation of the mixer performance. Therefore, it is of particular interest to develop THz superconducting SIS mixers incorporating tunnel junctions with a larger energy gap. Niobium-nitride (NbN) superconducting tunnel junctions have been long known for their large energy gap, almost double that of Nb ones. With the introduction of epitaxially grown NbN films, the fabrication technology of NbN superconducting tunnel junctions has been considerably improved in the recent years. Nevertheless, their performances are still not as good as Nb ones, and furthermore they are not yet demonstrated in real astronomical applications. Given the facts mentioned above, in this paper we systematically study the quantum mixing behaviors of NbN superconducting tunnel junctions in the THz regime and demonstrate an astronomical testing observation with a 0.5 THz superconducting SIS mixer developed with NbN tunnel junctions. The main results of this study include: (1) successful design and fabrication of a 0.4˜0.6 THz waveguide mixing circuit with the high-dielectric-constant MgO substrate; (2) successful fabrication of NbN superconducting tunnel junctions with the gap voltage reaching 5.6 mV and the quality factor as high as 15; (3) demonstration of a 0.5 THz waveguide NbN superconducting SIS mixer with a measured receiver noise temperature (no correction) as low as five times the quantum limit

  5. Bilateral meandering pulmonary veins

    Energy Technology Data Exchange (ETDEWEB)

    Thupili, Chakradhar R.; Udayasankar, Unni [Pediatric Imaging, Imaging Institute Cleveland Clinic, Cleveland, OH (United States); Renapurkar, Rahul [Imaging Institute Cleveland Clinic, Thoracic Imaging, L10, Cleveland, OH (United States)

    2015-06-15

    Meandering pulmonary veins is a rare clinical entity that can be mistaken for more complex congenital syndromes such as hypogenetic lung syndrome. We report imaging findings in a rare incidentally detected case of bilateral meandering pulmonary veins. We briefly discuss the role of imaging in diagnosing this condition, with particular emphasis on contrast-enhanced CT. (orig.)

  6. Modification of meander migration by bank failures

    Science.gov (United States)

    Motta, D.; Langendoen, E. J.; Abad, J. D.; García, M. H.

    2014-05-01

    Meander migration and planform evolution depend on the resistance to erosion of the floodplain materials. To date, research to quantify meandering river adjustment has largely focused on resistance to erosion properties that vary horizontally. This paper evaluates the combined effect of horizontal and vertical floodplain material heterogeneity on meander migration by simulating fluvial erosion and cantilever and planar bank mass failure processes responsible for bank retreat. The impact of stream bank failures on meander migration is conceptualized in our RVR Meander model through a bank armoring factor associated with the dynamics of slump blocks produced by cantilever and planar failures. Simulation periods smaller than the time to cutoff are considered, such that all planform complexity is caused by bank erosion processes and floodplain heterogeneity and not by cutoff dynamics. Cantilever failure continuously affects meander migration, because it is primarily controlled by the fluvial erosion at the bank toe. Hence, it impacts migration rates and meander shapes through the horizontal and vertical distribution of erodibility of floodplain materials. Planar failures are more episodic. However, in floodplain areas characterized by less cohesive materials, they can affect meander evolution in a sustained way and produce preferential migration patterns. Model results show that besides the hydrodynamics, bed morphology and horizontal floodplain heterogeneity, floodplain stratigraphy can significantly affect meander evolution, both in terms of migration rates and planform shapes. Specifically, downstream meander migration can either increase or decrease with respect to the case of a homogeneous floodplain; lateral migration generally decreases as result of bank protection due to slump blocks; and the effect on bend skewness depends on the location and volumes of failed bank material caused by cantilever and planar failures along the bends, with possible achievement of

  7. River Restoration and Meanders

    Directory of Open Access Journals (Sweden)

    G. Mathias Kondolf

    2006-12-01

    Full Text Available Among the most visually striking river restoration projects are those that involve the creation of a new channel, often in a new alignment and generally with a form and dimensions that are different from those of the preproject channel. These channel reconstruction projects often have the objective of creating a stable, single-thread, meandering channel, even on rivers that were not historically meandering, on rivers whose sediment load and flow regime would not be consistent with such stable channels, or on already sinuous channels whose bends are not symmetrical. Such meandering channels are often specified by the Rosgen classification system, a popular restoration design approach. Although most projects of this type have not been subject to objective evaluation, completed postproject appraisals show that many of these projects failed within months or years of construction. Despite its, at best, mixed results, this classification and form-based approach continues to be popular because it is easy to apply, because it is accessible to those without formal training in fluvial geomorphology, and probably because it satisfies a deep-seated, although unrecognized, cultural preference for single-thread meandering channels. This preference is consistent with 18th-century English landscape theories, which held the serpentine form to be ideal and led to widespread construction of meandering channels on the country estates of the era. The preference for stability in restored channels seems to be widely accepted by practitioners and funders despite the fact that it is antithetical to research showing that dynamically migrating channels have the greatest ecological richness.

  8. Microwave dynamics of high aspect ratio superconducting nanowires studied using self-resonance

    Science.gov (United States)

    Santavicca, Daniel F.; Adams, Jesse K.; Grant, Lierd E.; McCaughan, Adam N.; Berggren, Karl K.

    2016-06-01

    We study the microwave impedance of extremely high aspect ratio (length/width ≈ 5000) superconducting niobium nitride nanowires. The nanowires are fabricated in a compact meander geometry that is in series with the center conductor of a 50 Ω coplanar waveguide transmission line. The transmission coefficient of the sample is measured up to 20 GHz. At high frequency, a peak in the transmission coefficient is seen. Numerical simulations show that this is a half-wave resonance along the length of the nanowire, where the nanowire acts as a high impedance, slow wave transmission line. This resonance sets the upper frequency limit for these nanowires as inductive elements. Fitting simulations to the measured resonance enables a precise determination of the nanowire's complex sheet impedance at the resonance frequency. The real part is a measure of dissipation, while the imaginary part is dominated by kinetic inductance. We characterize the dependence of the sheet resistance and sheet inductance on both temperature and current and compare the results to recent theoretical predictions for disordered superconductors. These results can aid in the understanding of high frequency devices based on superconducting nanowires. They may also lead to the development of novel superconducting devices such as ultra-compact resonators and slow-wave structures.

  9. The bankfull hydraulic geometry of evolving meander bends

    Science.gov (United States)

    Monegaglia, F.; Tubino, M.; Zolezzi, G.

    2017-12-01

    Changes in the bankfull hydraulic geometry of meandering rivers associated with meander growth from incipient meandering to cutoffs have seldom been analysed in detail. Such information is also needed by meander morphodynamic models, most of which simulate the evolution of bankfull channel geometry by simply accounting for channel slope reduction inversely proportional to elongation, while changes in bankfull channel width are often neglected or, when they are considered, they are not consistent with the few available observations. To address these gaps we first perform an extensive, systematic, bend-scale evolutionary analysis of bankfull channel widths in several large meandering rivers in the Amazon basin, over a three decades time period, from remotely sensed field data. The analysis consistently show a slight decreasing trend of the bankfull channel width during the planform evolution towards cutoff. Furthermore, we develop a physically based model for the evolution of bankfull channel geometry during the planform development of meandering rivers. The model is based on the conservation of sediment discharge. An integrated one-dimensional Exner equation that accounts for meander elongation, sediment supply conservation and sediment income from the channel banks, allows us to predict the evolution of the channel slope. The evolution of the channel width is modeled through a threshold equation. The model correctly predicts the slight variability of channel width during meander development and a gentler reduction of the channel slope, which is mitigated by the conservation of sediment supply. The bankfull geometry of highly dynamic meandering rivers is predicted to be elongation-dominated, while the one related to slowly evolving meandering rivers is sediment supply-dominated. Finally, we discuss the implications of the proposed modeling framework in terms of planform structure, meander shape and morphodynamic influence.

  10. River meander modeling and confronting uncertainty.

    Energy Technology Data Exchange (ETDEWEB)

    Posner, Ari J. (University of Arizona Tucson, AZ)

    2011-05-01

    This study examines the meandering phenomenon as it occurs in media throughout terrestrial, glacial, atmospheric, and aquatic environments. Analysis of the minimum energy principle, along with theories of Coriolis forces (and random walks to explain the meandering phenomenon) found that these theories apply at different temporal and spatial scales. Coriolis forces might induce topological changes resulting in meandering planforms. The minimum energy principle might explain how these forces combine to limit the sinuosity to depth and width ratios that are common throughout various media. The study then compares the first order analytical solutions for flow field by Ikeda, et al. (1981) and Johannesson and Parker (1989b). Ikeda's et al. linear bank erosion model was implemented to predict the rate of bank erosion in which the bank erosion coefficient is treated as a stochastic variable that varies with physical properties of the bank (e.g., cohesiveness, stratigraphy, or vegetation density). The developed model was used to predict the evolution of meandering planforms. Then, the modeling results were analyzed and compared to the observed data. Since the migration of a meandering channel consists of downstream translation, lateral expansion, and downstream or upstream rotations several measures are formulated in order to determine which of the resulting planforms is closest to the experimental measured one. Results from the deterministic model highly depend on the calibrated erosion coefficient. Since field measurements are always limited, the stochastic model yielded more realistic predictions of meandering planform evolutions. Due to the random nature of bank erosion coefficient, the meandering planform evolution is a stochastic process that can only be accurately predicted by a stochastic model.

  11. Field migration rates of tidal meanders recapitulate fluvial morphodynamics

    Science.gov (United States)

    Finotello, Alvise; Lanzoni, Stefano; Ghinassi, Massimiliano; Marani, Marco; Rinaldo, Andrea; D'Alpaos, Andrea

    2018-02-01

    The majority of tidal channels display marked meandering features. Despite their importance in oil-reservoir formation and tidal landscape morphology, questions remain on whether tidal-meander dynamics could be understood in terms of fluvial processes and theory. Key differences suggest otherwise, like the periodic reversal of landscape-forming tidal flows and the widely accepted empirical notion that tidal meanders are stable landscape features, in stark contrast with their migrating fluvial counterparts. On the contrary, here we show that, once properly normalized, observed migration rates of tidal and fluvial meanders are remarkably similar. Key to normalization is the role of tidal channel width that responds to the strong spatial gradients of landscape-forming flow rates and tidal prisms. We find that migration dynamics of tidal meanders agree with nonlinear theories for river meander evolution. Our results challenge the conventional view of tidal channels as stable landscape features and suggest that meandering tidal channels recapitulate many fluvial counterparts owing to large gradients of tidal prisms across meander wavelengths.

  12. Laboratory Experiments on Meandering Meltwater Channels

    Science.gov (United States)

    Fernandez, R.; Berens, J.; Parker, G.; Stark, C. P.

    2017-12-01

    Meandering channels of all scales and flowing over a wide variety of media have common planform patterns. Although the analogy in planform suggests there is a common underlying framework, the constitutive relations driving planform evolution through vertical incision/deposition and lateral migration differ from medium to medium. The driving processes in alluvial and mixed bedrock-alluvial meandering channels have been studied substantially over the last decades. However, this is not the case for meandering channels in other media such as ice or soluble rock. Here we present results from experiments conducted at the Ven Te Chow Hydrosystems Laboratory of the University of Illinois at Urbana-Champaign on meltwater meandering channels. A rivulet is carved into an ice block and water is allowed to flow at a constant discharge. Planform evolution is analyzed with time lapse imaging and complemented with rubber molds of the channel once the experiment is over. These molds give us the full 3D structure of the meandering, including incisional overhang. Vertical incision rates are measured throughout the run by taking elevations along the channel, and these measurements are complemented with analysis from the molds. We show examples of meandering of intense amplitude with deep overhangs. Features resembling scroll bars document cyclically punctuated melting. We report on lateral migration rates, incision rates, sinuosity, channel depths, channel widths, reach averaged velocities, bend wavelengths and amplitudes and compare them to values reported in the literature for alluvial rivers.

  13. Field migration rates of tidal meanders recapitulate fluvial morphodynamics.

    Science.gov (United States)

    Finotello, Alvise; Lanzoni, Stefano; Ghinassi, Massimiliano; Marani, Marco; Rinaldo, Andrea; D'Alpaos, Andrea

    2018-02-13

    The majority of tidal channels display marked meandering features. Despite their importance in oil-reservoir formation and tidal landscape morphology, questions remain on whether tidal-meander dynamics could be understood in terms of fluvial processes and theory. Key differences suggest otherwise, like the periodic reversal of landscape-forming tidal flows and the widely accepted empirical notion that tidal meanders are stable landscape features, in stark contrast with their migrating fluvial counterparts. On the contrary, here we show that, once properly normalized, observed migration rates of tidal and fluvial meanders are remarkably similar. Key to normalization is the role of tidal channel width that responds to the strong spatial gradients of landscape-forming flow rates and tidal prisms. We find that migration dynamics of tidal meanders agree with nonlinear theories for river meander evolution. Our results challenge the conventional view of tidal channels as stable landscape features and suggest that meandering tidal channels recapitulate many fluvial counterparts owing to large gradients of tidal prisms across meander wavelengths. Copyright © 2018 the Author(s). Published by PNAS.

  14. Infrared hot-electron NbN superconducting photodetectors for imaging applications

    International Nuclear Information System (INIS)

    Il'in, K.S.; Gol'tsman, G.N.; Verevkin, A.A.; Sobolewski, Roman

    1999-01-01

    We report an effective quantum efficiency of 340, responsivity >200 A W -1 (>10 4 V W -1 ) and response time of 27±5 ps at temperatures close to the superconducting transition for NbN superconducting hot-electron photodetectors (HEPs) in the near-infrared and optical ranges. Our studies were performed on a few nm thick NbN films deposited on sapphire substrates and patterned into μm-size multibridge detector structures, incorporated into a coplanar transmission line. The time-resolved photoresponse was studied by means of subpicosecond electro-optic sampling with 100 fs wide laser pulses. The quantum efficiency and responsivity studies of our photodetectors were conducted using an amplitude-modulated infrared beam, fibre-optically coupled to the device. The observed picosecond response time and the very high efficiency and sensitivity of the NbN HEPs make them an excellent choice for infrared imaging photodetectors and input optical-to-electrical transducers for superconducting digital circuits. (author)

  15. Historical analysis indicates seepage control on initiation of meandering

    NARCIS (Netherlands)

    Eekhout, J.P.C.; Hoitink, A.J.F.; Makaske, B.

    2013-01-01

    In analytical and numerical models of river meandering, initiation of meandering typically occurs uniformly along the streamwise coordinate in the channel. Based on a historical analysis of the Nierskanaal, here we show how and under which circumstances meandering has initiated in isolated sections

  16. Potential applications of NbN composites in fusion reactor magnets

    International Nuclear Information System (INIS)

    Capone, D.W. II; Gray, K.E.; Kampwirth, R.T.; Ho, H.L.

    1986-02-01

    Recent projected requirements for large scale fusion reactor magnets call for the development of advanced superconducting materials capable of producing peak magnetic fields in excess of 15 T with current densities in the windings in excess of 2 x 10 3 A/cm 2 . These materials will be exposed to large stresses (up to 500 MPa) and neutron fluences as high as 10 22 n/cm 2 over the lifetime of the conductor. The demonstrated strain and radiation tolerance of NbN together with excellent superconducting properties make it a promising candidate to be used in a superconducting composite capable of satisfying these requirements. Our program at Argonne is directed towards demonstrating a method of fabrication which is capable of achieving these goals. Tests will be conducted on moderate lengths of NbN superconducting composites to verify the ability to achieve large overall current densities in magnetic fields up to 20 T. High field applications of NbN are also being investigated by groups in Japan and Germany

  17. Don't Fence Me In: Free Meanders in a Confined River Valley

    Science.gov (United States)

    Eke, E. C.; Wilcock, P. R.

    2015-12-01

    The interaction between meandering river channels and inerodible valley walls provides a useful test of our ability to understand meander dynamics. In some cases, river meanders confined between valley walls display distinctive angular bends in a dynamic equilibrium such that their size and shape persist as the meander migrates. In other cases, meander geometry is more varied and changes as the meander migrates. The ratio of channel to valley width has been identified as a useful parameter for defining confined meanders, but is not sufficient to distinguish cases in which sharp angular bends are able to migrate with little change in geometry. Here, we examine the effect of water and sediment supply on the geometry of confined rivers in order to identify conditions under which meander geometry reaches a persistent dynamic equilibrium. Because channel width and meander geometry are closely related, we use a numerical meander model that allows for independent migration of both banks, thereby allowing channel width to vary in space and time. We hypothesize that confined meanders with persistent angular bends have smaller transport rates of bed material and that their migration is driven by erosion of the cutbank (bank-pull migration). When bed material supply is sufficiently large that point bar deposition drives meander migration (bar-push migration), confined meander bends have a larger radius of curvature and a geometry that varies as the meander migrates. We test this hypothesis using historical patterns of confined meander migration for rivers with different rates of sediment supply and bed material transport. Interpretation of the meander migration pattern is provided by the free-width meander migration model.

  18. Texture variations and atomic dislocations by Ar-irradiation in Au and NbN sputtered layers

    International Nuclear Information System (INIS)

    Jung, V.

    1988-02-01

    Irradiation of Au and NbN sputtered layers with Ar ++ ions of 600 keV leads to a narrower orientation distribution of the [111] direction of the Au layers from 12 0 FWHM to 6 0 and to only very small FWHM changes in texture distributions of the NbN layers. But the FWHM of the reflex distribution of the irradiated NbN layers is increased significantly from ΔΘ = 0.65 0 to 1.17 0 for one sample position. This is caused by small atomic dislocations in the NbN lattice. The FWHM of reflex distribution of the Au layers increased only from ΔΘ = 0.60 0 to 0.65 0 after irradiation. Oblique incidence of Ar ++ ions causes, by absence of channeling, stronger distortions than perpendicular incidence. (orig.) [de

  19. Suppression of Lateral Diffusion and Surface Leakage Currents in nBn Photodetectors Using an Inverted Design

    Science.gov (United States)

    Du, X.; Savich, G. R.; Marozas, B. T.; Wicks, G. W.

    2018-02-01

    Surface leakage and lateral diffusion currents in InAs-based nBn photodetectors have been investigated. Devices fabricated using a shallow etch processing scheme that etches through the top contact and stops at the barrier exhibited large lateral diffusion current but undetectably low surface leakage. Such large lateral diffusion current significantly increased the dark current, especially in small devices, and causes pixel-to-pixel crosstalk in detector arrays. To eliminate the lateral diffusion current, two different approaches were examined. The conventional solution utilized a deep etch process, which etches through the top contact, barrier, and absorber. This deep etch processing scheme eliminated lateral diffusion, but introduced high surface current along the device mesa sidewalls, increasing the dark current. High device failure rate was also observed in deep-etched nBn structures. An alternative approach to limit lateral diffusion used an inverted nBn structure that has its absorber grown above the barrier. Like the shallow etch process on conventional nBn structures, the inverted nBn devices were fabricated with a processing scheme that only etches the top layer (the absorber, in this case) but avoids etching through the barrier. The results show that inverted nBn devices have the advantage of eliminating the lateral diffusion current without introducing elevated surface current.

  20. Migration Rate Of Tidal Meanders: Inferences From The Venice Lagoon

    Science.gov (United States)

    Finotello, A.; D'Alpaos, A.; Ghinassi, M.; Lanzoni, S.; Marani, M.; Rinaldo, A.

    2015-12-01

    Meandering channels are ubiquitous features of tidal landscapes. However, despite their fundamental role on the eco-morphodynamic evolution of these landscapes, tidal meanders have received less attention when compared to their fluvial counterparts. Improving current understanding of tidal meander migration, a largely-examined topic in fluvial landscapes, is a key step to highlight analogies and differences between tidal and fluvial cases. The migration of about 400 meander bends, belonging to 40 salt-marsh channels in the Northern Venice Lagoon (Italy), from 1968 to nowadays, has been investigated by means of both a classical method in fluvial frameworks and new procedure. Similarities with fluvial meanders occur, although important difference also emerge. Meanders cutting through the San Felice marsh follow the relationship between cartesian length and channel width, typical of meanders developed within different settings. However, meander migration rates proved to be smaller than those characterizing fluvial meanders. Indeed, the analysis of meander migration suggests a mean migration rate of about 0.10 m/year, consistent with the few data available in the literature. As for the fluvial case, the maximum-potential migration rate (i.e. the envelope curve of the relationship between migration rate and bend radius, both divided by channel width) reaches a maximum for radius-over-width ratio included between 2 and 3, regardless of the considered method. Nevertheless, the new-proposed method allows us to provide a more objective and continuous characterization. By using this new procedure, the channel curvature has finally been Fourier-analyzed, confirming the importance of even harmonics along the curvature spectrum. A correlation between migration rates and dominant harmonics seems to drive the evolution of tidal meanders and might represent a key-feature to distinguish them from their fluvial counterparts.

  1. On atmospheric stability in the dynamic wake meandering model

    DEFF Research Database (Denmark)

    Keck, Rolf-Erik; de Mare, Martin Tobias; Churchfield, Matthew J.

    2014-01-01

    The present study investigates a new approach for capturing the effects of atmospheric stability on wind turbine wake evolution and wake meandering by using the dynamic wake meandering model. The most notable impact of atmospheric stability on the wind is the changes in length and velocity scales...... spectra and applied to the dynamic wake meandering model to capture the correct wake meandering behaviour. The ambient turbulence in all stability classes is generated using the Mann turbulence model, where the effects of non-neutral atmospheric stability are approximated by the selection of input...... in the computational domain. The changes in the turbulent length scales due to the various atmospheric stability states impact the wake meandering characteristics and thus the power generation by the individual turbines. The proposed method is compared with results from both large-eddy simulation coupled...

  2. nBn Infrared Detector Containing Graded Absorption Layer

    Science.gov (United States)

    Gunapala, Sarath D.; Ting, David Z.; Hill, Cory J.; Bandara, Sumith V.

    2009-01-01

    It has been proposed to modify the basic structure of an nBn infrared photodetector so that a plain electron-donor- type (n-type) semiconductor contact layer would be replaced by a graded n-type III V alloy semiconductor layer (i.e., ternary or quarternary) with appropriate doping gradient. The abbreviation nBn refers to one aspect of the unmodified basic device structure: There is an electron-barrier ("B" ) layer between two n-type ("n" ) layers, as shown in the upper part of the figure. One of the n-type layers is the aforementioned photon-absorption layer; the other n-type layer, denoted the contact layer, collects the photocurrent. The basic unmodified device structure utilizes minority-charge-carrier conduction, such that, for reasons too complex to explain within the space available for this article, the dark current at a given temperature can be orders of magnitude lower (and, consequently, signal-to-noise ratios can be greater) than in infrared detectors of other types. Thus, to obtain a given level of performance, less cooling (and, consequently, less cooling equipment and less cooling power) is needed. [In principle, one could obtain the same advantages by means of a structure that would be called pBp because it would include a barrier layer between two electron-acceptor- type (p-type) layers.] The proposed modifications could make it practical to utilize nBn photodetectors in conjunction with readily available, compact thermoelectric coolers in diverse infrared- imaging applications that could include planetary exploration, industrial quality control, monitoring pollution, firefighting, law enforcement, and medical diagnosis.

  3. Hsp90α regulates ATM and NBN functions in sensing and repair of DNA double-strand breaks.

    Science.gov (United States)

    Pennisi, Rosa; Antoccia, Antonio; Leone, Stefano; Ascenzi, Paolo; di Masi, Alessandra

    2017-08-01

    The molecular chaperone heat shock protein 90 (Hsp90α) regulates cell proteostasis and mitigates the harmful effects of endogenous and exogenous stressors on the proteome. Indeed, the inhibition of Hsp90α ATPase activity affects the cellular response to ionizing radiation (IR). Although the interplay between Hsp90α and several DNA damage response (DDR) proteins has been reported, its role in the DDR is still unclear. Here, we show that ataxia-telangiectasia-mutated kinase (ATM) and nibrin (NBN), but not 53BP1, RAD50, and MRE11, are Hsp90α clients as the Hsp90α inhibitor 17-(allylamino)-17-demethoxygeldanamycin (17-AAG) induces ATM and NBN polyubiquitination and proteosomal degradation in normal fibroblasts and lymphoblastoid cell lines. Hsp90α-ATM and Hsp90α-NBN complexes are present in unstressed and irradiated cells, allowing the maintenance of ATM and NBN stability that is required for the MRE11/RAD50/NBN complex-dependent ATM activation and the ATM-dependent phosphorylation of both NBN and Hsp90α in response to IR-induced DNA double-strand breaks (DSBs). Hsp90α forms a complex also with ph-Ser1981-ATM following IR. Upon phosphorylation, NBN dissociates from Hsp90α and translocates at the DSBs, while phThr5/7-Hsp90α is not recruited at the damaged sites. The inhibition of Hsp90α affects nuclear localization of MRE11 and RAD50, impairs DDR signaling (e.g., BRCA1 and CHK2 phosphorylation), and slows down DSBs repair. Hsp90α inhibition does not affect DNA-dependent protein kinase (DNA-PK) activity, which possibly phosphorylates Hsp90α and H2AX after IR. Notably, Hsp90α inhibition causes H2AX phosphorylation in proliferating cells, this possibly indicating replication stress events. Overall, present data shed light on the regulatory role of Hsp90α on the DDR, controlling ATM and NBN stability and influencing the DSBs signaling and repair. © 2017 Federation of European Biochemical Societies.

  4. High magnetic field matching effects in NbN films induced by template grown dense ferromagnetic nanowires arrays

    DEFF Research Database (Denmark)

    Hallet, X.; Mátéfi-Tempfli, Mária; Michotte, S.

    2009-01-01

    magnetic nanowires. Matching effects have been observed up to 2.5 T (11th matching field) and are maintained at low temperature. An appreciable enhancement of the superconducting properties is observed. At low fields, a hysteretic behavior in the magnetoresistance is found, directly related...

  5. Ultrathin NbN Films for Superconducting Single-Photon Detectors

    International Nuclear Information System (INIS)

    Slysz, W.; Guziewicz, M.; Borysiewicz, M.

    2011-01-01

    We present our research on fabrication and structural and transport characterization of ultrathin superconducting NbN layers deposited on both single-crystal Al 2 O 3 and Si wafers, and SiO 2 and Si 3 N 4 buffer layers grown directly on Si wafers. The thicknesses of our films varied from 6 nm to 50 nm and they were grown using reactive RF magnetron sputtering on substrates maintained at the temperature 850 o C. We have performed extensive morphology characterization of our films using the X-ray diffraction method and atomic force microscopy, and related the results to the type of the substrate used for the film deposition. Our transport measurements showed that even the thinnest, 6 nm thick NbN films had the superconducting critical temperature of 10-12 K, which was increased to 14 K for thicker films. (author)

  6. Einstein's meanders

    Science.gov (United States)

    Lomnitz, C.

    2007-05-01

    What does Einstein have to do with subduction? Good question. Peaceful Lake Budi, lying at the heart of an Indian reservation in the Deep South of Chile, had subsided by two meters in the 1960 mega-thrust earthquake. This unique South American salt lake was hiding an awful secret: it was actually an oxbow, not a lake. But Einstein had realized in 1926 that meanders are natural freaks. Rivers will not flow uphill, yet - he claimed - they don't flow down the path of steepest descent either. This anomaly was put at the doorstep of a weak Coriolis Force. Thus Einstein problematized the dilemma of the earth sciences. How can a non-force produce margin-parallel compression in a convergent margin where extension is expected? In fact, where does the energy for meander formation come from? Good question . . . Even Wikipedia knows that Coriolis is not a “force” but an “effect”. So is the obliquity of plate convergence in subduction. Where did Einstein err, and where was he a pioneer? Coastal ablation plus alternating subsidence and emergence in giant earthquakes may yield an answer. Einstein, A. (1926). Die Ursache der Maeanderbildung der Flusslaeufe und das sogenannte Baersche Gesetz, Naturwissenschaften, 14, fascicle II.

  7. Terahertz transmission of NbN superconductor thin film

    Czech Academy of Sciences Publication Activity Database

    Tesař, Roman; Koláček, Jan; Šimša, Zdeněk; Šindler, Michal; Skrbek, L.; Il'in, K.; Sieger, M.

    2010-01-01

    Roč. 470, č. 19 (2010), s. 932-934 ISSN 0921-4534 R&D Projects: GA ČR GA202/08/0326 Institutional research plan: CEZ:AV0Z10100521 Keywords : far- infrared transmission * NbN * superconducting film * magnetic vortices * terahertz waves Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.407, year: 2010

  8. NbN tunnel junctions

    International Nuclear Information System (INIS)

    Villegier, J.C.; Vieux-Rochaz, L.; Goniche, M.; Renard, P.; Vabre, M.

    1984-09-01

    All-niobium nitride Josephon junctions have been prepared successfully using a new processing called SNOP: Selective Niobium (nitride) Overlap Process. Such a process involves the ''trilayer'' deposition on the whole wafer before selective patterning of the electrodes by optically controlled dry reactive ion etching. Only two photomask levels are need to define an ''overlap'' or a ''cross-type'' junction with a good accuracy. The properties of the niobium nitride films deposited by DC-magnetron sputtering and the surface oxide growth are analysed. The most critical point to obtain high quality and high gap value junctions resides in the early stage of the NbN counterelectrode growth. Some possibilities to overcome such a handicap exist even if the fabrication needs substrate temperatures below 250 0 C

  9. Influence Coefficients of Constructive Parameters of Meander Slow-Wave System with Additional Shields

    Directory of Open Access Journals (Sweden)

    Metlevskis Edvardas

    2016-12-01

    Full Text Available Constructions of meander slow-wave systems with additional shields grounded at different positions are presented. The construction of meander slow-wave systems with additional shields grounded at both edges is investigated in detail. The influence of the main constructive parameters on the electrical characteristics of meander slow-wave systems with additional shields grounded at both edges is evaluated. The main constructive parameters of the investigated system are: the length of the conductor, the width of meander conductor, the width of additional shield, and the width of the gap between adjacent meander conductors.

  10. Employing the Hilbert-Huang Transform to analyze observed natural complex signals: Calm wind meandering cases

    Science.gov (United States)

    Martins, Luis Gustavo Nogueira; Stefanello, Michel Baptistella; Degrazia, Gervásio Annes; Acevedo, Otávio Costa; Puhales, Franciano Scremin; Demarco, Giuliano; Mortarini, Luca; Anfossi, Domenico; Roberti, Débora Regina; Costa, Felipe Denardin; Maldaner, Silvana

    2016-11-01

    In this study we analyze natural complex signals employing the Hilbert-Huang spectral analysis. Specifically, low wind meandering meteorological data are decomposed into turbulent and non turbulent components. These non turbulent movements, responsible for the absence of a preferential direction of the horizontal wind, provoke negative lobes in the meandering autocorrelation functions. The meandering characteristic time scales (meandering periods) are determined from the spectral peak provided by the Hilbert-Huang marginal spectrum. The magnitudes of the temperature and horizontal wind meandering period obtained agree with the results found from the best fit of the heuristic meandering autocorrelation functions. Therefore, the new method represents a new procedure to evaluate meandering periods that does not employ mathematical expressions to represent observed meandering autocorrelation functions.

  11. Upper critical field of NbN film

    International Nuclear Information System (INIS)

    Ashkin, M.; Gavaler, J.R.

    1978-01-01

    It is proposed and experimentally verified that the anomalously high superconducting critical field normal to the surface of NbN films possessing a column-void microstructure is H/sub c3/, the field appropriate for surface superconductivity. It is also proposed that because the coherence length is much less than the lateral column dimension that the resistivity of the column and not the film enters calculations of the Maki parameter α. A previously noted discrepancy in α is removed by these proposals

  12. Adsorption and pathways of single atomistic processes on NbN (0 0 1) and (1 1 1) surfaces: A first-principle study

    International Nuclear Information System (INIS)

    Ren, Yuan; Liu, Xuejie; Tan, Xin; Sun, Shiyang; Wei, Huai; Lu, Feng

    2014-01-01

    Highlights: • We investigate the behaviors of Nb, Si, N atom on NbN(0 0 1) and (1 1 1) surfaces. • The adsorption and diffusion of single atom on NbN(0 0 1) and (1 1 1) were calculated by DFT. • The potential energy surface of single atom on NbN(0 0 1) and (1 1 1) surfaces were investigated. • The diffusion process of single on NbN(0 0 1) and (1 1 1) were calculated by nudged elastic band. - Abstract: The adsorption and pathway processes of atomistic Nb, Si, and N at high-symmetry sites on NbN (0 0 1) and (1 1 1) surfaces were studied using first-principle method, which is based on the density functional theory. This investigation presents some of the results obtained. The potential energy surface (PES) was obtained by calculating the adsorption of Nb, Si, and N atoms on NbN (0 0 1). The most energetic site for the Nb atom adsorbed on NbN(0 0 1) was the site ‘on-top of face–center cubic’ (HL), whereas those for N and Si were both at the site ‘between TopN and HL’ (TopN-HL). The minimum energy paths of the single atom on NbN (0 0 1) surface diffusion were obtained using the PES calculation results. The Nb and Si atoms were diffused from the TopN to the HL position. The N atom was diffused from the TopNb, whereas the TopN–HL to HL position. The diffusion energies of the Nb, Si, and N atoms on the NbN (0 0 1) surface were 0.32, 0.69, and 1.32 eV, respectively. The pathways of the atomistic diffusion involved the diffusion of atoms from the FCC to the HCP site on the NbN (1 1 1) surface. The results showed that the diffusion energy of Si on the Nb layer was smaller than that on the N layer. Si and N can easily form stable structures while bonding on the N layer. Moreover, Si atoms can stabilize the activity of N atoms while promoting the spread of Nb atoms during deposition

  13. Meandering Brownian Donkeys

    Science.gov (United States)

    Eichhorn, R.; Reimann, P.

    2004-04-01

    We consider a Brownian particle whose motion is confined to a ``meandering'' pathway and which is driven away from thermal equilibrium by an alternating external force. This system exhibits absolute negative mobility, i.e. when an external static force is applied the particle moves in the direction opposite to that force. We reveal the physical mechanism behind this ``donkey-like'' behavior, and derive analytical approximations that are in excellent agreement with numerical results.

  14. Meandering Brownian Donkeys

    International Nuclear Information System (INIS)

    Eichhorn, R.; Reimann, P.

    2004-01-01

    We consider a Brownian particle whose motion is confined to a ''meandering'' pathway and which is driven away from thermal equilibrium by an alternating external force. This system exhibits absolute negative mobility, i.e. when an external static force is applied the particle moves in the direction opposite to that force. We reveal the physical mechanism behind this ''donkey-like'' behavior, and derive analytical approximations that are in excellent agreement with numerical results. (author)

  15. Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs0.91Sb0.09 alloy nBn photodetectors

    Science.gov (United States)

    Olson, B. V.; Kim, J. K.; Kadlec, E. A.; Klem, J. F.; Hawkins, S. D.; Leonhardt, D.; Coon, W. T.; Fortune, T. R.; Cavaliere, M. A.; Tauke-Pedretti, A.; Shaner, E. A.

    2015-11-01

    Carrier lifetime and dark current measurements are reported for a mid-wavelength infrared InAs0.91Sb0.09 alloy nBn photodetector. Minority carrier lifetimes are measured using a non-contact time-resolved microwave technique on unprocessed portions of the nBn wafer and the Auger recombination Bloch function parameter is determined to be |F1F2|=0.292 . The measured lifetimes are also used to calculate the expected diffusion dark current of the nBn devices and are compared with the experimental dark current measured in processed photodetector pixels from the same wafer. Excellent agreement is found between the two, highlighting the important relationship between lifetimes and diffusion currents in nBn photodetectors.

  16. Bank pull or bar push: What drives scroll-bar formation in meandering rivers?

    NARCIS (Netherlands)

    van de Lageweg, W. I.; van Dijk, W. M.; Baar, A. W.; Rutten, J.; Kleinhans, M. G.

    2014-01-01

    One of the most striking features of meandering rivers are quasi-regular ridges of the point bar, evidence of a pulsed lateral migration of meander bends. Scroll bars formed on the inner bend are preserved on the point-bar surface as a series of ridges as meanders migrate, and in the subsurface of

  17. Nbn and atm cooperate in a tissue and developmental stage-specific manner to prevent double strand breaks and apoptosis in developing brain and eye.

    Directory of Open Access Journals (Sweden)

    Paulo M G Rodrigues

    Full Text Available Nibrin (NBN or NBS1 and ATM are key factors for DNA Double Strand Break (DSB signaling and repair. Mutations in NBN or ATM result in Nijmegen Breakage Syndrome and Ataxia telangiectasia. These syndromes share common features such as radiosensitivity, neurological developmental defects and cancer predisposition. However, the functional synergy of Nbn and Atm in different tissues and developmental stages is not yet understood. Here, we show in vivo consequences of conditional inactivation of both genes in neural stem/progenitor cells using Nestin-Cre mice. Genetic inactivation of Atm in the central nervous system of Nbn-deficient mice led to reduced life span and increased DSBs, resulting in increased apoptosis during neural development. Surprisingly, the increase of DSBs and apoptosis was found only in few tissues including cerebellum, ganglionic eminences and lens. In sharp contrast, we showed that apoptosis associated with Nbn deletion was prevented by simultaneous inactivation of Atm in developing retina. Therefore, we propose that Nbn and Atm collaborate to prevent DSB accumulation and apoptosis during development in a tissue- and developmental stage-specific manner.

  18. Evaluation of the nuclear cross sections for the reactions: /sup 93/Nb(n,2n)sup(92M)Nb and /sup 93/Nb(n,2n)/sup 92/Nb from threshold to 20 MeV

    Energy Technology Data Exchange (ETDEWEB)

    Philis, C; Young, P G

    1975-07-01

    A preliminary evaluation of the nuclear cross section for the reactions /sup 93/Nb(n,2n)sup(92M)Nb and /sup 93/Nb(n,2n)/sup 92/Nb has been completed from threshold to 20 MeV. The evaluation is based entirely on experimental results. The recommended values were determined after analysis, selection, and normalization of the measurements to a consistent set of standards. The evaluated data are discussed and compared with theoretical values and estimates of the uncertainty in the adopted data are provided.

  19. Evolution of Si-2N2Nb island configuration on NbN (0 0 1) surface: A first-principles calculation

    International Nuclear Information System (INIS)

    Ren, Yuan; Xia, Qing; Zhang, Chao; Liu, Xuejie; Li, Zhi; Zhang, Fucheng

    2015-01-01

    Graphical abstract: - Highlights: • We investigate the separation and gathering of Nb, Si and N atom around come to NbN grain. • The adsorption and diffusion of single atom around 2N2Nb island were calculated by DFT. • The adsorption behavior of Si-2N2Nb island on NbN (0 0 1) surface were investigated. • The evolution of Si-2N2Nb island on NbN (0 0 1) were calculated by nudged elastic band. - Abstract: The separation and aggregation of Nb, Si, and N atoms around the NbN grain during the deposition of the Nb–Si–N nanocomposite film were discussed. The evolution behavior of the 2N2Nb island and the adsorption and diffusion energy of Nb, Si, and N atoms around the island on the NbN (0 0 1) surface were investigated using the first-principles method based on density functional theory. Results indicated that the most stable configuration of the Nb–Si–N island was the combination of Nb and N atoms to form the island and the possible aggregation of the Si atom to diagonal Nb atom outside the island. Substitution solid solution was eventually formed, in which the Nb atom of the 2N2Nb island was replaced by the Si atom during deposition. However, the Si atom was easily replaced by the Nb atom at the site with abundant Nb atoms. The diffusion energy of the evolution from Nb-2N1Nb1Si to Si-2N2Nb was 1.58 eV, and the total energy of the configuration decreased. Moreover, the interface of Si and NbN grains tended to separate. The highest energy adsorption sites for Nb, Si, N atoms adsorbed on the NbN (0 0 1) surface around the 2N2Nb island were P3, P1, and P2, respectively. The adsorption energies of Nb, Si, and N atoms on the NbN (0 0 1) surface around the 2N2Nb island were 7.3067, 5.3521, and 6.7113 eV, respectively, and their diffusion energies around the 2N2Nb island were 2.62, 1.35, and 5.094 eV, respectively. The low adsorption and diffusion energies of active Si atoms promoted the distribution of Nb and N atoms during deposition. Furthermore, the NbN

  20. The Spatial Structure of Planform Migration - Curvature Relation of Meandering Rivers

    Science.gov (United States)

    Guneralp, I.; Rhoads, B. L.

    2005-12-01

    Planform dynamics of meandering rivers have been of fundamental interest to fluvial geomorphologists and engineers because of the intriguing complexity of these dynamics, the role of planform change in floodplain development and landscape evolution, and the economic and social consequences of bank erosion and channel migration. Improved understanding of the complex spatial structure of planform change and capacity to predict these changes are important for effective stream management, engineering and restoration. The planform characteristics of a meandering river channel are integral to its planform dynamics. Active meandering rivers continually change their positions and shapes as a consequence of hydraulic forces exerted on the channel banks and bed, but as the banks and bed change through sediment transport, so do the hydraulic forces. Thus far, this complex feedback between form and process is incompletely understood, despite the fact that the characteristics and the dynamics of meandering rivers have been studied extensively. Current theoretical models aimed at predicting planform dynamics relate rates of meander migration to local and upstream planform curvature where weighting of the influence of curvature on migration rate decays exponentially over distance. This theoretical relation, however, has not been rigorously evaluated empirically. Furthermore, although models based on exponential-weighting of curvature effects yield fairly realistic predictions of meander migration, such models are incapable of reproducing complex forms of bend development, such as double heading or compound looping. This study presents the development of a new methodology based on parametric cubic spline interpolation for the characterization of channel planform and the planform curvature of meandering rivers. The use of continuous mathematical functions overcomes the reliance on bend-averaged values or piece-wise discrete approximations of planform curvature - a major limitation

  1. Flow Structure and Channel Morphology at a Confluent-Meander Bend

    Science.gov (United States)

    Riley, J. D.; Rhoads, B. L.

    2009-12-01

    Flow structure and channel morphology in meander bends have been well documented. Channel curvature subjects flow through a bend to centrifugal acceleration, inducing a counterbalancing pressure-gradient force that initiates secondary circulation. Transverse variations in boundary shear stress and bedload transport parallel cross-stream movement of high velocity flow and determine spatial patterns of erosion along the outer bank and deposition along the inner bank. Laboratory experiments and numerical modeling of confluent-meander bends, a junction planform that develops when a tributary joins a meandering river along the outer bank of a bend, suggest that flow and channel morphology in such bends deviate from typical patterns. The purpose of this study is to examine three-dimensional (3-D) flow structure and channel morphology at a natural confluent-meander bend. Field data were collected in southeastern Illinois where Big Muddy Creek joins the Little Wabash River near a local maximum of curvature along an elongated meander loop. Measurements of 3-D velocity components were obtained with an acoustic Doppler current profiler (ADCP) for two flow events with differing momentum ratios. Channel bathymetry was also resolved from the four-beam depths of the ADCP. Analysis of velocity data reveals a distinct shear layer flanked by dual helical cells within the bend immediately downstream of the confluence. Flow from the tributary confines flow from the main channel along the inner part of the channel cross section, displacing the thalweg inward, limiting the downstream extent of the point bar, protecting the outer bank from erosion and enabling bar-building along this bank. Overall, this pattern of flow and channel morphology is quite different from typical patterns in meander bends, but is consistent with a conceptual model derived from laboratory experiments and numerical modeling.

  2. Formation of a cohesive floodplain in a dynamic experimental meandering river

    NARCIS (Netherlands)

    Dijk, W.M. van; Lageweg, W.I. van de; Kleinhans, M.G.

    2013-01-01

    Field studies suggest that a cohesive floodplain is a necessary condition for meandering in contrast to braided rivers. However, it is only partly understood how the balance between floodplain construction by overbank deposition and removal by bank erosion and chutes leads to meandering. This is

  3. Interactions between hyporheic flow produced by stream meanders, bars, and dunes

    Science.gov (United States)

    Stonedahl, Susa H.; Harvey, Judson W.; Packman, Aaron I.

    2013-01-01

    Stream channel morphology from grain-scale roughness to large meanders drives hyporheic exchange flow. In practice, it is difficult to model hyporheic flow over the wide spectrum of topographic features typically found in rivers. As a result, many studies only characterize isolated exchange processes at a single spatial scale. In this work, we simulated hyporheic flows induced by a range of geomorphic features including meanders, bars and dunes in sand bed streams. Twenty cases were examined with 5 degrees of river meandering. Each meandering river model was run initially without any small topographic features. Models were run again after superimposing only bars and then only dunes, and then run a final time after including all scales of topographic features. This allowed us to investigate the relative importance and interactions between flows induced by different scales of topography. We found that dunes typically contributed more to hyporheic exchange than bars and meanders. Furthermore, our simulations show that the volume of water exchanged and the distributions of hyporheic residence times resulting from various scales of topographic features are close to, but not linearly additive. These findings can potentially be used to develop scaling laws for hyporheic flow that can be widely applied in streams and rivers.

  4. River meander modeling of the Wabash River near the Interstate 64 Bridge near Grayville, Illinois

    Science.gov (United States)

    Lant, Jeremiah G.; Boldt, Justin A.

    2018-01-16

    Natural river channels continually evolve and change shape over time. As a result, channel evolution or migration can cause problems for bridge structures that are fixed in the flood plain. A once-stable bridge structure that was uninfluenced by a river’s shape could be encroached upon by a migrating river channel. The potential effect of the actively meandering Wabash River on the Interstate 64 Bridge at the border with Indiana near Grayville, Illinois, was studied using a river migration model called RVR Meander. RVR Meander is a toolbox that can be used to model river channel meander migration with physically based bank erosion methods. This study assesses the Wabash River meandering processes through predictive modeling of natural meandering over the next 100 years, climate change effects through increased river flows, and bank protection measures near the Interstate 64 Bridge.

  5. Integration of fluvial erosion factors for predicting landslides along meandering rivers

    Science.gov (United States)

    Chen, Yi-chin; Chang, Kang-tsung; Ho, Jui-yi

    2015-04-01

    River incision and lateral erosion are important geomorphologic processes in mountainous areas of Taiwan. During a typhoon or storm event, the increase of water discharge, flow velocity, and sediment discharge enhances the power of river erosion on channel bank. After the materials on toe of hillslope were removed by river erosion, landslides were triggered at outer meander bends. Although it has been long expected that river erosion can trigger landslide, studies quantifying the effects of river erosion on landslide and the application of river erosion index in landslide prediction are still overlooked. In this study, we investigated the effect of river erosion on landslide in a particular meanders landscape of the Jhoukou River, southern Taiwan. We developed a semi-automatic model to separate meandering lines into several reach segments based on the inflection points and to calculate river erosion indexes, e.g. sinuosity of meander, stream power, and stream order, for each reach segment. This model, then, built the spatial relationship between the reaches and its corresponding hillslopes, of which the toe was eroded by the reach. Based on the spatial relationship, we quantified the correlations between these indexes and landslides triggered by Typhoon Morakot in 2009 to examine the effects of river erosion on landslide. The correlated indexes were then used as landslide predictors in logistic regression model. Results of the study showed that there is no significant correlation between landslide density and meander sinuosity. This may be a result of wider channel dispersing the erosion at a meandering reach. On the other hand, landslide density at concave bank is significantly higher than that at convex bank in the downstream (stream order > 3), but that is almost the same in the upstream (stream order bank. In contrast, river sediment in the downstream is an erosion agent eroding the concave bank laterally, but also depositing on the concave side and protecting

  6. Anisotropic behaviour of transmission through thin superconducting NbN film in parallel magnetic field

    Energy Technology Data Exchange (ETDEWEB)

    Šindler, M., E-mail: sindler@fzu.cz [Institute of Physics ASCR, v. v. i., Cukrovarnická 10, CZ-162 53 Praha 6 (Czech Republic); Tesař, R. [Institute of Physics ASCR, v. v. i., Cukrovarnická 10, CZ-162 53 Praha 6 (Czech Republic); Faculty of Mathematics and Physics, Charles University, Ke Karlovu 3, CZ-121 16 Praha (Czech Republic); Koláček, J. [Institute of Physics ASCR, v. v. i., Cukrovarnická 10, CZ-162 53 Praha 6 (Czech Republic); Skrbek, L. [Faculty of Mathematics and Physics, Charles University, Ke Karlovu 3, CZ-121 16 Praha (Czech Republic)

    2017-02-15

    Highlights: • Transmission through thin NbN film in parallel magnetic field exhibits strong anisotropic behaviour in the terahertz range. • Response for a polarisation parallel with the applied field is given as weighted sum of superconducting and normal state contributions. • Effective medium approach fails to describe response for linear polarisation perpendicular to the applied magnetic field. - Abstract: Transmission of terahertz waves through a thin layer of the superconductor NbN deposited on an anisotropic R-cut sapphire substrate is studied as a function of temperature in a magnetic field oriented parallel with the sample. A significant difference is found between transmitted intensities of beams linearly polarised parallel with and perpendicular to the direction of applied magnetic field.

  7. Germline variants in MRE11/RAD50/NBN complex genes in childhood leukemia

    International Nuclear Information System (INIS)

    Mosor, Maria; Ziółkowska-Suchanek, Iwona; Nowicka, Karina; Dzikiewicz-Krawczyk, Agnieszka; Januszkiewicz–Lewandowska, Danuta; Nowak, Jerzy

    2013-01-01

    The MRE11, RAD50, and NBN genes encode proteins of the MRE11-RAD50-NBN (MRN) complex involved in cellular response to DNA damage and the maintenance of genome stability. In our previous study we showed that the germline p.I171V mutation in NBN may be considered as a risk factor in the development of childhood acute lymphoblastic leukemia (ALL) and some specific haplotypes of that gene may be associated with childhood leukemia. These findings raise important questions about the role of mutations in others genes of the MRN complex in childhood leukemia. The aim of this study was to answer the question whether MRE11 and RAD50 alterations may be associated with childhood ALL or AML. We estimated the frequency of constitutional mutations and polymorphisms in selected regions of MRE11, RAD50, and NBN in the group of 220 children diagnosed with childhood leukemias and controls (n=504/2200). The analysis was performed by specific amplification of region of interest by PCR and followed by multi-temperature single-strand conformation polymorphism (PCR-MSSCP) technique. We performed two molecular tests to examine any potential function of the detected the c.551+19G>A SNP in RAD50 gene. To our knowledge, this is the first analysis of the MRE11, RAD50 and NBN genes in childhood leukemia. The frequency of either the AA genotype or A allele of RAD50-rs17166050 were significantly different in controls compared to leukemia group (ALL+AML) (p<0.0019 and p<0.0019, respectively). The cDNA analysis of AA or GA genotypes carriers has not revealed evidence of splicing abnormality of RAD50 pre-mRNA. We measured the allelic-specific expression of G and A alleles at c.551+19G>A and the statistically significant overexpression of the G allele has been observed. Additionally we confirmed the higher incidence of the p.I171V mutation in the leukemia group (7/220) than among controls (12/2400) (p<0.0001). The formerly reported sequence variants in the RAD50 and MRE11 gene may not constitute a

  8. Growth and characterization of epitaxial ultra-thin NbN films on 3C-SiC/Si substrate for terahertz applications

    International Nuclear Information System (INIS)

    Dochev, D; Desmaris, V; Pavolotsky, A; Meledin, D; Belitsky, V; Lai, Z; Henry, A; Janzen, E; Pippel, E; Woltersdorf, J

    2011-01-01

    We report on electrical properties and microstructure of epitaxial thin NbN films grown on 3C-SiC/Si substrates by means of reactive magnetron sputtering. A complete epitaxial growth at the NbN/3C-SiC interface has been confirmed by means of high resolution transmission electron microscopy (HRTEM) along with x-ray diffractometry (XRD). Resistivity measurements of the films have shown that the superconducting transition onset temperature (T C ) for the best specimen is 11.8 K. Using these epitaxial NbN films, we have fabricated submicron-size hot-electron bolometer (HEB) devices on 3C-SiC/Si substrate and performed their complete DC characterization. The observed critical temperature T C = 11.3 K and critical current density of about 2.5 MA cm -2 at 4.2 K of the submicron-size bridges were uniform across the sample. This suggests that the deposited NbN films possess the necessary homogeneity to sustain reliable hot-electron bolometer device fabrication for THz mixer applications.

  9. Growth and characterization of epitaxial ultra-thin NbN films on 3C-SiC/Si substrate for terahertz applications

    Energy Technology Data Exchange (ETDEWEB)

    Dochev, D; Desmaris, V; Pavolotsky, A; Meledin, D; Belitsky, V [Group for Advanced Receiver Development, Department of Earth and Space Sciences, Chalmers University of Technology, SE-412 96 Gothenburg (Sweden); Lai, Z [Nanofabrication Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-412 96 Gothenburg (Sweden); Henry, A; Janzen, E [Department of Physics, Chemistry and Biology, Linkoeping University, SE-581 83 Linkoeping (Sweden); Pippel, E; Woltersdorf, J, E-mail: dimitar.dochev@chalmers.se [Max-Planck-Institute of Microstructure Physics, Weinberg 2, D-06120 Halle (Germany)

    2011-03-15

    We report on electrical properties and microstructure of epitaxial thin NbN films grown on 3C-SiC/Si substrates by means of reactive magnetron sputtering. A complete epitaxial growth at the NbN/3C-SiC interface has been confirmed by means of high resolution transmission electron microscopy (HRTEM) along with x-ray diffractometry (XRD). Resistivity measurements of the films have shown that the superconducting transition onset temperature (T{sub C}) for the best specimen is 11.8 K. Using these epitaxial NbN films, we have fabricated submicron-size hot-electron bolometer (HEB) devices on 3C-SiC/Si substrate and performed their complete DC characterization. The observed critical temperature T{sub C} = 11.3 K and critical current density of about 2.5 MA cm{sup -2} at 4.2 K of the submicron-size bridges were uniform across the sample. This suggests that the deposited NbN films possess the necessary homogeneity to sustain reliable hot-electron bolometer device fabrication for THz mixer applications.

  10. Effects of epitaxial structure and processing on electrical characteristics of InAs-based nBn infrared detectors

    Science.gov (United States)

    Du, X.; Savich, G. R.; Marozas, B. T.; Wicks, G. W.

    2017-02-01

    The conventional processing of the III-V nBn photodetectors defines mesa devices by etching the contact n-layer and stopping immediately above the barrier, i.e., a shallow etch. This processing enables great suppression of surface leakage currents without having to explore surface passivation techniques. However, devices that are made with this processing scheme are subject to lateral diffusion currents. To address the lateral diffusion current, we compare the effects of different processing approaches and epitaxial structures of nBn detectors. The conventional solution for eliminating lateral diffusion current, a deep etch through the barrier and the absorber, creates increased dark currents and an increased device failure rate. To avoid deep etch processing, a new device structure is proposed, the inverted-nBn structure. By comparing with the conventional nBn structure, the results show that the lateral diffusion current is effectively eliminated in the inverted-nBn structure without elevating the dark currents.

  11. Meandered-line antenna with integrated high-impedance surface.

    Energy Technology Data Exchange (ETDEWEB)

    Forman, Michael A.

    2010-09-01

    A reduced-volume antenna composed of a meandered-line dipole antenna over a finite-width, high-impedance surface is presented. The structure is novel in that the high-impedance surface is implemented with four Sievenpiper via-mushroom unit cells, whose area is optimized to match the meandered-line dipole antenna. The result is an antenna similar in performance to patch antenna but one fourth the area that can be deployed directly on the surface of a conductor. Simulations demonstrate a 3.5 cm ({lambda}/4) square antenna with a bandwidth of 4% and a gain of 4.8 dBi at 2.5 GHz.

  12. Morphology and spacing of river meander scrolls

    Science.gov (United States)

    Strick, Robert J. P.; Ashworth, Philip J.; Awcock, Graeme; Lewin, John

    2018-06-01

    Many of the world's alluvial rivers are characterised by single or multiple channels that are often sinuous and that migrate to produce a mosaicked floodplain landscape of truncated scroll (or point) bars. Surprisingly little is known about the morphology and geometry of scroll bars despite increasing interest from hydrocarbon geoscientists working with ancient large meandering river deposits. This paper uses remote sensing imagery, LiDAR data-sets of meandering scroll bar topography, and global coverage elevation data to quantify scroll bar geometry, anatomy, relief, and spacing. The analysis focuses on preserved scroll bars in the Mississippi River (USA) floodplain but also compares attributes to 19 rivers of different scale and depositional environments from around the world. Analysis of 10 large scroll bars (median area = 25 km2) on the Mississippi shows that the point bar deposits can be categorised into three different geomorphological units of increasing scale: individual 'scrolls', 'depositional packages', and 'point bar complexes'. Scroll heights and curvatures are greatest near the modern channel and at the terminating boundaries of different depositional packages, confirming the importance of the formative main channel on subsequent scroll bar relief and shape. Fourier analysis shows a periodic variation in signal (scroll bar height) with an average period (spacing) of 167 m (range 150-190 m) for the Mississippi point bars. For other rivers, a strong relationship exists between the period of scroll bars and the adjacent primary channel width for a range of rivers from 55 to 2042 mis 50% of the main channel width. The strength of this correlation over nearly two orders of magnitude of channel size indicates a scale independence of scroll bar spacing and suggests a strong link between channel migration and scroll bar construction with apparent regularities despite different flow regimes. This investigation of meandering river dynamics and floodplain

  13. Plume meander and dispersion in a stable boundary layer

    Science.gov (United States)

    Hiscox, April L.; Miller, David R.; Nappo, Carmen J.

    2010-11-01

    Continuous lidar measurements of elevated plume dispersion and corresponding micrometeorology data are analyzed to establish the relationship between plume behavior and nocturnal boundary layer dynamics. Contrasting nights of data from the JORNADA field campaign in the New Mexico desert are analyzed. The aerosol lidar measurements were used to separate the plume diffusion (plume spread) from plume meander (displacement). Mutiresolution decomposition was used to separate the turbulence scale (90 s). Durations of turbulent kinetic energy stationarity and the wind steadiness were used to characterize the local scale and submesoscale turbulence. Plume meander, driven by submesoscale wind motions, was responsible for most of the total horizontal plume dispersion in weak and variable winds and strong stability. This proportion was reduced in high winds (i.e., >4 m s-1), weakly stable conditions but remained the dominant dispersion mechanism. The remainder of the plume dispersion in all cases was accounted for by internal spread of the plume, which is a small eddy diffusion process driven by turbulence. Turbulence stationarity and the wind steadiness are demonstrated to be closely related to plume diffusion and plume meander, respectively.

  14. Convective nature of the planimetric instability in meandering river dynamics.

    Science.gov (United States)

    Camporeale, Carlo; Ridolfi, Luca

    2006-02-01

    The convective nature of the linear instability of meandering river dynamics is analytically demonstrated and the corresponding Green's function is derived. The wave packet due to impulsive disturbance migrates along a river either downstream or upstream, depending on the subresonant or superresonant conditions. The influence of the parameters that govern the meandering process is shown and the role of the fluid dynamic detail used to describe the morphodynamic problem is discussed. A numerical simulation of the river planimetry is also developed.

  15. Understanding Single-Thread Meandering Rivers with High Sinuosity on Mars through Chemical Precipitation Experiments

    Science.gov (United States)

    Lim, Y.; Kim, W.

    2015-12-01

    Meandering rivers are extremely ubiquitous on Earth, yet it is only recently that single-thread experimental channels with low sinuosity have been created. In these recent experiments, as well as in natural rivers, vegetation plays a crucial role in maintaining a meandering pattern by adding cohesion to the bank and inhibiting erosion. The ancient, highly sinuous channels found on Mars are enigmatic because presumably vegetation did not exist on ancient Mars. Under the hypothesis that Martian meandering rivers formed by chemical precipitation on levees and flood plain deposits, we conducted carbonate flume experiments to investigate the formation and evolution of a single-thread meander pattern without vegetation. The flow recirculating in the flume is designed to accelerate chemical reactions - dissolution of limestone using CO2 gas to produce artificial spring water and precipitation of carbonates to increase cohesion- with precise control of water discharge, sediment discharge, and temperature. Preliminary experiments successfully created a single-thread meandering pattern through chemical processes. Carbonate deposits focused along the channel sides improved the bank stability and made them resistant to erosion, which led to a stream confined in a narrow path. The experimental channels showed lateral migration of the bend through cut bank and point bar deposits; intermittent floods created overbank flow and encouraged cut bank erosion, which enhanced lateral migration of the channel, while increase in sediment supply improved lateral point bar deposition, which balanced erosion and deposition rates. This mechanism may be applied to terrestrial single-thread and/or meandering rivers with little to no vegetation or before its introduction to Earth and also provide the link between meandering river records on Mars to changes in Martian surface conditions.

  16. Evolution of a meander in a constricted reach of a dryland alluvial channel: Little Colorado River, Arizona

    Science.gov (United States)

    Block, D.

    2013-12-01

    Lateral migration of river meander systems is complex, particularly in drylands where fluvial processes are discontinuous. Analysis of aerial photography and GPS tracking of cutbank erosion can further empirical knowledge of meander development. Moreover, discharge records link landscape response to hydroclimatic variability. In the semiarid Little Colorado River valley, extreme erosive episodes typically result from snowmelt flow, or lately, rain-on-snow events. The 90-km reach of the Little Colorado River (LCR), from Winslow to Leupp, Arizona, meanders within a 5-km-wide valley. Near Winslow, however, the LCR is disconnected from its floodplain by a 12-km-long levee. The levee restricts the floodplain to only 450 m wide in one location. In this severely constricted river stretch, a flood event in January 2008 relocated a meander bend. Bend development followed a common sequence of migration phases long noted in the literature, but at a very rapid pace. During the flood event one meander limb migrated ~200 m, following the general northwesterly flow direction of the river. Movement vectors of meander inflection points, apex, and apical line characterize changes in bend morphology. Before the 2008 flood event the apical line of the meander bend had azimuth 50°; after the 2008 flood event the apical line of the meander bend had azimuth 345°. Since that event, the meander bend has migrated an additional ~200 m through a combination of translation, extension, and rotation. The data provide information on geomorphic response to bimodal precipitation patterns in a human-perturbed channel reach.

  17. Wake meandering of a model wind turbine operating in two different regimes

    Science.gov (United States)

    Foti, Daniel; Yang, Xiaolei; Campagnolo, Filippo; Maniaci, David; Sotiropoulos, Fotis

    2018-05-01

    The flow behind a model wind turbine under two different turbine operating regimes (region 2 for turbine operating at optimal condition with the maximum power coefficient and 1.4-deg pitch angle and region 3 for turbine operating at suboptimal condition with a lower power coefficient and 7-deg pitch angle) is investigated using wind tunnel experiments and numerical experiments using large-eddy simulation (LES) with actuator surface models for turbine blades and nacelle. Measurements from the model wind turbine experiment reveal that the power coefficient and turbine wake are affected by the operating regime. Simulations with and without a nacelle model are carried out for each operating condition to study the influence of the operating regime and nacelle on the formation of the hub vortex and wake meandering. Statistics and energy spectra of the simulated wakes are in good agreement with the measurements. For simulations with a nacelle model, the mean flow field is composed of an outer wake, caused by energy extraction by turbine blades, and an inner wake directly behind the nacelle, while for the simulations without a nacelle model, the central region of the wake is occupied by a jet. The simulations with the nacelle model reveal an unstable helical hub vortex expanding outward toward the outer wake, while the simulations without a nacelle model show a stable and columnar hub vortex. Because of the different interactions of the inner region of the wake with the outer region of the wake, a region with higher turbulence intensity is observed in the tip shear layer for the simulation with a nacelle model. The hub vortex for the turbine operating in region 3 remains in a tight helical spiral and intercepts the outer wake a few diameters further downstream than for the turbine operating in region 2. Wake meandering, a low-frequency large-scale motion of the wake, commences in the region of high turbulence intensity for all simulations with and without a nacelle model

  18. A numerical study of the complex flow structure in a compound meandering channel

    Science.gov (United States)

    Moncho-Esteve, Ignacio J.; García-Villalba, Manuel; Muto, Yasu; Shiono, Koji; Palau-Salvador, Guillermo

    2018-06-01

    In this study, we report large eddy simulations of turbulent flow in a periodic compound meandering channel for three different depth conditions: one in-bank and two overbank conditions. The flow configuration corresponds to the experiments of Shiono and Muto (1998). The predicted mean streamwise velocities, mean secondary motions, velocity fluctuations, turbulent kinetic energy as well as mean flood flow angle to meandering channel are in good agreement with the experimental measurements. We have analyzed the flow structure as a function of the inundation level, with particular emphasis on the development of the secondary motions due to the interaction between the main channel and the floodplain flow. Bed shear stresses have been also estimated in the simulations. Floodplain flow has a significant impact on the flow structure leading to significantly different bed shear stress patterns within the main meandering channel. The implications of these results for natural compound meandering channels are also discussed.

  19. Miniaturized bandpass filter using a meandered stepped-impedance resonator with a meandered-line stub-load on a GaAs substrate.

    Science.gov (United States)

    Chuluunbaatar, Z; Wang, C; Kim, N Y

    2014-01-01

    This paper reports a compact bandpass filter with improved skirt selectivity using integrated passive device fabrication technology on a GaAs substrate. The structure of the filter consists of electromagnetically coupled meandered-line symmetric stepped-impedance resonators. The strength of the coupling between the resonators is enhanced by using a meandered-line stub-load inside the resonators to improve the selectivity and miniaturize the size of the filter. In addition, the center frequency of the filter can be flexibly controlled by varying degrees of the capacitive coupling between resonator and stub-load. To verify the proposed concept, a protocol bandpass filter with center frequency of 6.53 GHz was designed, fabricated, and measured, with a return loss and insertion loss of 39.1 dB and 1.63 dB.

  20. Miniaturized Bandpass Filter Using a Meandered Stepped-Impedance Resonator with a Meandered-Line Stub-Load on a GaAs Substrate

    Directory of Open Access Journals (Sweden)

    Z. Chuluunbaatar

    2014-01-01

    Full Text Available This paper reports a compact bandpass filter with improved skirt selectivity using integrated passive device fabrication technology on a GaAs substrate. The structure of the filter consists of electromagnetically coupled meandered-line symmetric stepped-impedance resonators. The strength of the coupling between the resonators is enhanced by using a meandered-line stub-load inside the resonators to improve the selectivity and miniaturize the size of the filter. In addition, the center frequency of the filter can be flexibly controlled by varying degrees of the capacitive coupling between resonator and stub-load. To verify the proposed concept, a protocol bandpass filter with center frequency of 6.53 GHz was designed, fabricated, and measured, with a return loss and insertion loss of 39.1 dB and 1.63 dB.

  1. Field Investigation of Flow Structure and Channel Morphology at Confluent-Meander Bends

    Science.gov (United States)

    Riley, J. D.; Rhoads, B. L.

    2007-12-01

    The movement of water and sediment through drainage networks is inevitably influenced by the convergence of streams and rivers at channel confluences. These focal components of fluvial systems produce a complex hydrodynamic environment, where rapid changes in flow structure and sediment transport occur to accommodate the merging of separate channel flows. The inherent geometric and hydraulic change at confluences also initiates the development of distinct geomorphic features, reflected in the bedform and shape of the channel. An underlying assumption of previous experimental and theoretical models of confluence dynamics has been that converging streams have straight channels with angular configurations. This generalized conceptualization was necessary to establish confluence planform as symmetrical or asymmetrical and to describe subsequent flow structure and geomorphic features at confluences. However, natural channels, particularly those of meandering rivers, curve and bend. This property and observation of channel curvature at natural junctions have led to the hypothesis that natural stream and river confluences tend to occur on the concave outer bank of meander bends. The resulting confluence planform, referred to as a confluent-meander bend, was observed over a century ago but has received little scientific attention. This paper examines preliminary data on three-dimensional flow structure and channel morphology at two natural confluent-meander bends of varying size and with differing tributary entrance locations. The large river confluence of the Vermilion River and Wabash River in west central Indiana and the comparatively small junction of the Little Wabash River and Big Muddy Creek in southeastern Illinois are the location of study sites for field investigation. Measurements of time-averaged three-dimensional velocity components were obtained at these confluences with an acoustic Doppler current profiler for flow events with differing momentum ratios. Bed

  2. Computer simulations of channel meandering and the formation of point bars: Linking channel dynamics to the preserved stratigraphy

    Science.gov (United States)

    Sun, T.; Covault, J. A.; Pyrcz, M.; Sullivan, M.

    2012-12-01

    Meandering rivers are probably one of the most recognizable geomorphic features on earth. As they meander across alluvial and delta plains, channels migrate laterally and develop point bars, splays, levees and other geomorphic and sedimentary features that compose substantial portions of the fill within many sedimentary basins. These basins can include hydrocarbon producing fields. Therefore, a good understanding of the processes of meandering channels and their associated deposits is critical for exploiting these reservoirs in the subsurface. In the past couple of decades, significant progress has been made in our understanding of the morphodynamics of channel meandering. Basic fluid dynamics and sediment transport (Ikeda and Parker, 1981; Howard, 1992) has shown that many characteristic features of meandering rivers, such as the meandering wavelength, growth rate and downstream migration rate, can be predicted quantitatively. As a result, a number of variations and improvement of the theory have emerged (e.g., Blondeaux and Seminara, 1985; Parker and Andrews, 1985, 1986; and Sun et al., 2001a, b).The main improvements include the recognition of so called "bar-bend" interactions, where the development of bars on the channel bed and their interactions with the channel bend is recognized as a primary cause for meandering channels to develop greater complexity than the classic goose-neck meander bend shapes, such as compound bend. Recently, Sun and others have shown that the spatial patterns of width variations in meandering channels can be explained by an extrinsic periodic flow variations coupled with the intrinsic bend instability dynamics. In contrast to the significant improvement of our understanding of channel meandering, little work has been done to link the geomorphic features of meandering channels to the geometry and heterogeneity of the deposits they form and ultimately preserves. A computer simulation model based on the work of Sun and others (1996, 2001

  3. Epitaxial growth of ultra-thin NbN films on AlxGa1−xN buffer-layers

    International Nuclear Information System (INIS)

    Krause, S; Meledin, D; Desmaris, V; Pavolotsky, A; Belitsky, V; Rudziński, M; Pippel, E

    2014-01-01

    The suitability of Al x Ga 1−x N epilayers to deposit onto ultra-thin NbN films has been demonstrated for the first time. High quality single-crystal films with 5 nm thickness confirmed by high resolution transmission electron microscopy (HRTEM) have been deposited in a reproducible manner by means of reactive DC magnetron sputtering at elevated temperatures and exhibit critical temperatures (T c ) as high as 13.2 K and residual resistivity ratio (RRR) ∼1 on hexagonal GaN epilayers. On increasing the Al content x in the Al x Ga 1−x N epilayer above 20%, a gradual deterioration of T c to 10 K was observed. Deposition of NbN on bare silicon substrates served as a reference and comparison. Excellent spatial homogeneity of the fabricated films was confirmed by R(T) measurements of patterned micro-bridges across the entire film area. The superconducting properties of these films were further characterized by critical magnetic field and critical current measurements. It is expected that the employment of GaN material as a buffer-layer for the deposition of ultra-thin NbN films will prospectively benefit terahertz electronics, particularly hot electron bolometer (HEB) mixers. (paper)

  4. Competing growth processes induced by next-nearest-neighbor interactions: Effects on meandering wavelength and stiffness

    Science.gov (United States)

    Blel, Sonia; Hamouda, Ajmi BH.; Mahjoub, B.; Einstein, T. L.

    2017-02-01

    In this paper we explore the meandering instability of vicinal steps with a kinetic Monte Carlo simulations (kMC) model including the attractive next-nearest-neighbor (NNN) interactions. kMC simulations show that increase of the NNN interaction strength leads to considerable reduction of the meandering wavelength and to weaker dependence of the wavelength on the deposition rate F. The dependences of the meandering wavelength on the temperature and the deposition rate obtained with simulations are in good quantitative agreement with the experimental result on the meandering instability of Cu(0 2 24) [T. Maroutian et al., Phys. Rev. B 64, 165401 (2001), 10.1103/PhysRevB.64.165401]. The effective step stiffness is found to depend not only on the strength of NNN interactions and the Ehrlich-Schwoebel barrier, but also on F. We argue that attractive NNN interactions intensify the incorporation of adatoms at step edges and enhance step roughening. Competition between NNN and nearest-neighbor interactions results in an alternative form of meandering instability which we call "roughening-limited" growth, rather than attachment-detachment-limited growth that governs the Bales-Zangwill instability. The computed effective wavelength and the effective stiffness behave as λeff˜F-q and β˜eff˜F-p , respectively, with q ≈p /2 .

  5. Effect of Si addition on the structure and corrosion behavior of NbN thin films deposited by unbalanced magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Velasco, L. [Universidad Nacional de Colombia, Departamento de Ingenieria Mecanica y Mecatronica, Facultad de Ingenieria, Bogota (Colombia); University of Southern California, Department of Chemical Engineering and Materials Science, Los Angeles, CA (United States); Olaya, J.J. [Universidad Nacional de Colombia, Departamento de Ingenieria Mecanica y Mecatronica, Facultad de Ingenieria, Bogota (Colombia); Rodil, S.E. [Universidad Nacional Autonoma de Mexico, Instituto de Investigaciones en Materiales, Mexico, D. F. (Mexico)

    2016-02-15

    In this work, nanostructured Nb{sub x}Si{sub y}N{sub z} thin films were deposited onto stainless steel AISI 304 substrates by co-sputtering a Nb target with Si additions while using unbalanced magnetron sputtering. The microstructure was analyzed by X-ray diffraction, and the chemical composition was identified by X-ray photoelectron spectroscopy. The hardness was measured by nanoindentation, and the corrosion resistance was studied by potentiodynamic polarization curves and electrochemical impedance spectroscopy using a 3 wt% NaCl solution. The addition of Si in the NbN thin films changed the microstructure from a crystalline to an amorphous phase. The chemical analysis showed the presence of both Si{sub 3}N{sub 4} and NbN phases. The hardness decreased from 20 GPa (NbN) to 15 GPa for the film with the highest Si concentration (28.6 at.%). Nevertheless, the corrosion properties were significantly improved as the Si concentration increased; the polarization resistance after 168 h of immersion was two orders of magnitude larger in comparison with the substrate. (orig.)

  6. Effect of Si addition on the structure and corrosion behavior of NbN thin films deposited by unbalanced magnetron sputtering

    International Nuclear Information System (INIS)

    Velasco, L.; Olaya, J.J.; Rodil, S.E.

    2016-01-01

    In this work, nanostructured Nb x Si y N z thin films were deposited onto stainless steel AISI 304 substrates by co-sputtering a Nb target with Si additions while using unbalanced magnetron sputtering. The microstructure was analyzed by X-ray diffraction, and the chemical composition was identified by X-ray photoelectron spectroscopy. The hardness was measured by nanoindentation, and the corrosion resistance was studied by potentiodynamic polarization curves and electrochemical impedance spectroscopy using a 3 wt% NaCl solution. The addition of Si in the NbN thin films changed the microstructure from a crystalline to an amorphous phase. The chemical analysis showed the presence of both Si 3 N 4 and NbN phases. The hardness decreased from 20 GPa (NbN) to 15 GPa for the film with the highest Si concentration (28.6 at.%). Nevertheless, the corrosion properties were significantly improved as the Si concentration increased; the polarization resistance after 168 h of immersion was two orders of magnitude larger in comparison with the substrate. (orig.)

  7. Study of SNS and SIS NbN Josephson junctions coupled to a microwave band-pass filter

    Energy Technology Data Exchange (ETDEWEB)

    Baggetta, E; Setzu, R; Villegier, J C [Laboratoire de Cryophysique, DRFMC, CEA, Grenoble (France)

    2006-06-01

    We have fabricated both NbN/Ta{sub x}N/NbN SN*S-type, NbN/MgO/NbN SIS-type Josephson junctions and microwave band-pass filters on different substrates (Si, Sapphire, MgO). NbN films have been deposited on both sides of (100) oriented, 250 {mu}m thick, MgO substrates with a high crystalline texture quality. The aim was to investigate the performances and the maximum achievable operating frequency in an NbN based RSFQ modulator front-end of an ADC in the 4 K-10 K temperature range. We observed that Ta{sub x}N thin films can be tuned from an insulating phase to a superconducting phase (Tc {approx}4K) by varying the nitrogen content during sputter deposition while the barrier height of MgO can also be controlled by deposition conditions and by tri-layer postdeposition annealing. Junction properties (Jc{approx}10-25 kA/cm{sup 2}), Mac Cumber parameter and RnIc product measured up to 1 mV are shown to be controlled by the reactive sputtering conditions. We have designed three pole band-pass filters and resonators in a micro-strip configuration and studied the junction coupling with the filters. We will show that a sigma-delta NbN technology is a suitable solution for analogue-to-digital conversion in the future generations of telecommunication satellites to achieve high sampling frequency and large bandwidth at high carrier frequency signal.

  8. Study of SNS and SIS NbN Josephson junctions coupled to a microwave band-pass filter

    International Nuclear Information System (INIS)

    Baggetta, E; Setzu, R; Villegier, J C

    2006-01-01

    We have fabricated both NbN/Ta x N/NbN SN*S-type, NbN/MgO/NbN SIS-type Josephson junctions and microwave band-pass filters on different substrates (Si, Sapphire, MgO). NbN films have been deposited on both sides of (100) oriented, 250 μm thick, MgO substrates with a high crystalline texture quality. The aim was to investigate the performances and the maximum achievable operating frequency in an NbN based RSFQ modulator front-end of an ADC in the 4 K-10 K temperature range. We observed that Ta x N thin films can be tuned from an insulating phase to a superconducting phase (Tc ∼4K) by varying the nitrogen content during sputter deposition while the barrier height of MgO can also be controlled by deposition conditions and by tri-layer postdeposition annealing. Junction properties (Jc∼10-25 kA/cm 2 ), Mac Cumber parameter and RnIc product measured up to 1 mV are shown to be controlled by the reactive sputtering conditions. We have designed three pole band-pass filters and resonators in a micro-strip configuration and studied the junction coupling with the filters. We will show that a sigma-delta NbN technology is a suitable solution for analogue-to-digital conversion in the future generations of telecommunication satellites to achieve high sampling frequency and large bandwidth at high carrier frequency signal

  9. Development of an analytical Lagrangian model for passive scalar dispersion in low-wind speed meandering conditions

    Science.gov (United States)

    Stefanello, M. B.; Degrazia, G. A.; Mortarini, L.; Buligon, L.; Maldaner, S.; Carvalho, J. C.; Acevedo, O. C.; Martins, L. G. N.; Anfossi, D.; Buriol, C.; Roberti, D.

    2018-02-01

    Describing the effects of wind meandering motions on the dispersion of scalars is a challenging task, since this type of flow represents a physical state characterized by multiple scales. In this study, a Lagrangian stochastic diffusion model is derived to describe scalar transport during the horizontal wind meandering phenomenon that occurs within a planetary boundary layer. The model is derived from the linearization of the Langevin equation, and it employs a heuristic functional form that represents the autocorrelation function of meandering motion. The new solutions, which describe the longitudinal and lateral wind components, were used to simulate tracer experiments that were performed in low-wind speed conditions. The results of the comparison indicate that the new model can effectively reproduce the observed concentrations of the contaminants, and therefore, it can satisfactorily describe enhanced dispersion effects due to the presence of meandering.

  10. Room temperature performance of mid-wavelength infrared InAsSb nBn detectors

    Energy Technology Data Exchange (ETDEWEB)

    Soibel, Alexander; Hill, Cory J.; Keo, Sam A.; Hoglund, Linda; Rosenberg, Robert; Kowalczyk, Robert; Khoshakhlagh, Arezou; Fisher, Anita; Ting, David Z.-Y.; Gunapala, Sarath D. [Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Dr., Pasadena, California 91030 (United States)

    2014-07-14

    In this work, we investigate the high temperature performance of mid-wavelength infrared InAsSb-AlAsSb nBn detectors with cut-off wavelengths near 4.5 μm. The quantum efficiency of these devices is 35% without antireflection coatings and does not change with temperature in the 77–325 K temperature range, indicating potential for room temperature operation. The current generation of nBn detectors shows an increase of operational bias with temperature, which is attributed to a shift in the Fermi energy level in the absorber. Analysis of the device performance shows that operational bias and quantum efficiency of these detectors can be further improved. The device dark current stays diffusion limited in the 150 K–325 K temperature range and becomes dominated by generation-recombination processes at lower temperatures. Detector detectivities are D*(λ) = 1 × 10{sup 9} (cm Hz{sup 0.5}/W) at T = 300 K and D*(λ) = 5 × 10{sup 9} (cm Hz{sup 0.5}/W) at T = 250 K, which is easily achievable with a one stage TE cooler.

  11. Meander morphodynamics over self-formed floodplains: can the migration history affect the future morphology of the river?

    Science.gov (United States)

    Bogoni, M.; Lanzoni, S.; Putti, M.

    2017-12-01

    Floodplains, and rivers therein, constitute complex systems whose simulation involves modeling of hydrodynamic, morphodynamic, chemical, and biological processes which act over a wide range of time scales (from days to centuries) and affect each other. Self-formed floodplains are produced by the sedimentary processes associated with the migration of river bends and the formation of abandoned oxbow lakes consequent to the cutoff of mature meanders. The erosion and deposition processes at the banks lead to heterogeneities in the surface composition, thus the river may experience faster or slower migration rates depending on the spatial distribution of the erosional resistance. As a consequence, the past spatial configurations of the river (i.e. the migration history) play a key role in shaping the successive river paths.We recently published a paper addressing the modeling of meander morphodynamics over self-formed heterogeneous floodplain. Results show that the heterogeneity in floodplain composition associated with the formation of geomorphic units (i.e., scroll bars and oxbow lakes) and the choice of a reliable flow field model to drive channel migration are two fundamental ingredients for reproducing correctly the long-term morphodynamics of alluvial meanders. We compare numerically generated planforms obtained for different scenarios of floodplain heterogeneity to natural meandering paths, through half meander metrics and spatial distribution of channel curvatures. Statistical and spectral tools disclose the complexity embedded in meandering geometry and the crucial differences between apparently similar configurations.Floodplain heterogeneity affects both the temporal and spatial distributions of meander geometry, and eventually leads to a closer statistical similarity between simulated and natural planform shapes when scroll bars and oxbow lakes left behind are harder to erode than the surrounding floodplain.

  12. Wake meandering under non-neutral atmospheric stability conditions – theory and facts

    DEFF Research Database (Denmark)

    Larsen, Gunner Chr.; Machefaux, Ewan; Chougule, Abhijit S.

    2015-01-01

    This paper deals with modelling of wake dynamics under influence of atmospheric stability conditions different from neutral. In particular, it is investigated how the basic split in turbulent scales, on which the Dynamic Wake Meandering model is based, can be utilized to include atmospheric...... stability effects in this model. This is done partly by analyzing a large number of turbulence spectra obtained from sonic measurements, partly by analyzing dedicated full-scale LiDAR measurements from which wake dynamics can be directly resolved. The theory behind generalizing the Dynamic Wake Meandering...

  13. Meanders and eddy formation by a buoyant coastal current flowing over a sloping topography

    Directory of Open Access Journals (Sweden)

    L. Cimoli

    2017-11-01

    Full Text Available This study investigates the linear and non-linear instability of a buoyant coastal current flowing along a sloping topography. In fact, the bathymetry strongly impacts the formation of meanders or eddies and leads to different dynamical regimes that can both enhance or prevent the cross-shore transport. We use the Regional Ocean Modeling System (ROMS to run simulations in an idealized channel configuration, using a fixed coastal current structure and testing its unstable evolution for various depths and topographic slopes. The experiments are integrated beyond the linear stage of the instability, since our focus is on the non-linear end state, namely the formation of coastal eddies or meanders, to classify the dynamical regimes. We find three non-linear end states, whose properties cannot be deduced solely from the linear instability analysis. They correspond to a quasi-stable coastal current, the propagation of coastal meanders, and the formation of coherent eddies. We show that the topographic parameter Tp, defined as the ratio of the topographic Rossby wave speed over the current speed, plays a key role in controlling the amplitude of the unstable cross-shore perturbations. This result emphasizes the limitations of linear stability analysis to predict the formation of coastal eddies, because it does not account for the non-linear saturation of the cross-shore perturbations, which is predominant for large negative Tp values. We show that a second dimensionless parameter, the vertical aspect ratio γ, controls the transition from meanders to coherent eddies. We suggest the use of the parameter space (Tp, γ to describe the emergence of coastal eddies or meanders from an unstable buoyant current. By knowing the values of Tp and γ for an observed flow, which can be calculated from hydrological sections, we can identify which non-linear end state characterizes that flow – namely if it is quasi-stable, meanders, or forms eddies.

  14. Rise time of voltage pulses in NbN superconducting single photon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Smirnov, K. V. [Moscow State Pedagogical University, 1 Malaya Pirogovskaya St., 119435 Moscow (Russian Federation); CJSC “Superconducting Nanotechnology” (Scontel), 5/22-1 Rossolimo St., 119021 Moscow (Russian Federation); National Research University Higher School of Economics, Moscow Institute of Electronics and Mathematics, 34 Tallinskaya St., 109028 Moscow (Russian Federation); Divochiy, A. V.; Karpova, U. V.; Morozov, P. V. [CJSC “Superconducting Nanotechnology” (Scontel), 5/22-1 Rossolimo St., 119021 Moscow (Russian Federation); Vakhtomin, Yu. B.; Seleznev, V. A. [Moscow State Pedagogical University, 1 Malaya Pirogovskaya St., 119435 Moscow (Russian Federation); CJSC “Superconducting Nanotechnology” (Scontel), 5/22-1 Rossolimo St., 119021 Moscow (Russian Federation); Sidorova, M. V. [Moscow State Pedagogical University, 1 Malaya Pirogovskaya St., 119435 Moscow (Russian Federation); Zotova, A. N.; Vodolazov, D. Yu. [Institute for Physics of Microstructure, Russian Academy of Sciences, GSP-105, 603950 Nizhny Novgorod (Russian Federation); Lobachevsky State University of Nizhny Novgorod, 23 Gagarin Avenue, 603950 Nizhny Novgorod (Russian Federation)

    2016-08-01

    We have found experimentally that the rise time of voltage pulse in NbN superconducting single photon detectors increases nonlinearly with increasing the length of the detector L. The effect is connected with dependence of resistance of the detector R{sub n}, which appears after photon absorption, on its kinetic inductance L{sub k} and, hence, on the length of the detector. This conclusion is confirmed by our calculations in the framework of two temperature model.

  15. Reductionist versus holistic approaches to the study of river meandering: An ideal dialogue

    Science.gov (United States)

    Seminara, G.; Pittaluga, M. Bolla

    2012-08-01

    We discuss some recent attempts to apply the theory of nonlinear dynamical systems to the interpretation of the long term morphodynamic evolution of meandering rivers. To make the discussion attractive for the reader, we employ the method of a Socratic dialogue between a member of the so called 'reductionist community', who is inclined to support only theories based on physical principles and who is skeptical about fashionable new paradigms, and a member of the 'holistic community', who supports the idea that new paradigms are needed because rivers are complex systems, whose response can only be interpreted using tools that analyze the system "as a whole". The dialogue focuses on a selection of recent contributions which assesses the progress in understanding of meander dynamics achieved by the use of the above new paradigms. The discussion suggests that some consensus has been reached on the fractal nature of meandering patterns, with the fractal dimension playing the role of a morphometric parameter. On the contrary, despite different early suggestions, recent thorough analysis has been unable to detect any clear evidence that the evolution of meanders displays the characters of either a chaotic or a self organized critical process. The dialogue is concluded with some consensus on the perspective that well founded cellular models may possibly help reconciling the reductionist and holistic viewpoints.

  16. Comportamiento de corrosión-erosión en recubrimientos de NbN depositados mediante sputtering magnetrón Erosion-corrosion behavior of magnetron sputtered NbN films

    Directory of Open Access Journals (Sweden)

    A Cáceres

    2012-08-01

    Full Text Available En la nueva generación de recubrimientos de uso industrial se incluye el nitruro de niobio (NbN debido a sus propiedades fisicoquímicas tales como: alta conductividad eléctrica, buenas propiedades mecánicas, alto punto de fusión e inercia química y además por ser un superconductor con temperatura crítica de 16 K. En este trabajo se reporta el efecto del sinergismo corrosión y erosión sobre recubrimientos de NbN depositados sobre acero inoxidable 304 y silicio usando los sistemas de sputtering con magnetrón balanceado y desbalanceado. Los experimentos de erosión-corrosión se estudiaron en un sistema que varió la velocidad y el ángulo de impacto de las partículas de erosión. Para ello se utilizó un lodo de partículas de SiO2 en una solución de 0,5M de H2SO4 + 3,5% NaCl y una concentración de 30% en peso de partículas de SiO2. La microestructura, morfología y composición química de las películas fueron analizadas con difracción de rayos X (DRX, microscopía electrónica de barrido (MEB y espectroscopia de fotoelectrones generados por rayos X (EFRX, respectivamente. Los resultados muestran que la resistencia a la erosión-corrosión de los recubiertos de NbN fue superior al sustrato y los mecanismos de desgaste sobre el recubrimiento dependen del ángulo de impacto y la velocidad de las partículas de erosión. Posibles razones de este comportamiento son discutidas en este trabajo.New generation PVD coatings for industrial applications include the niobium nitride (NbN due to its excellent properties such as high chemical inertness, excellent mechanical properties, high electrical conductivity, high melting point, and a superconducting transition temperature around 16 K. In this work we reported the results the study of corrosion and erosion effect on niobium nitride coatings deposited on AISI304 stainless steel using unbalanced and balanced magnetron sputtering and then it were compared to the uncoated tool steel substrate

  17. Mechanical behavior enhancement of ZnO nanowire by embedding different nanowires

    Directory of Open Access Journals (Sweden)

    Ali Vazinishayan

    2018-06-01

    Full Text Available In this work, we employed commercial finite element modeling (FEM software package ABAQUS to analyze mechanical properties of ZnO nanowire before and after embedding with different kinds of nanowires, having different materials and cross-section models such as Au (circular, Ag (pentagonal and Si (rectangular using three point bending technique. The length and diameter of the ZnO nanowire were measured to be 12,280 nm and 103.2 nm, respectively. In addition, Au, Ag and Si nanowires were considered to have the length of 12,280 nm and the diameter of 27 nm. It was found that after embedding Si nanowire with rectangular cross-section into the ZnO nanowire, the distribution of Von Misses stresses criterion, displacement and strain were decreased than the other nanowires embedded. The highest stiffness, the elastic deformation and the high strength against brittle failure have been made by Si nanowire comparison to the Au and Ag nanowires, respectively. Keywords: Nanowires, Material effects, Mechanical properties, Brittle failure

  18. Anisotropic behaviour of transmission through thin superconducting NbN film in parallel magnetic field

    Czech Academy of Sciences Publication Activity Database

    Šindler, Michal; Tesař, Karel; Koláček, Jan; Skrbek, L.

    2017-01-01

    Roč. 533, Feb (2017), s. 154-157 ISSN 0921-4534 R&D Projects: GA MŠk(CZ) LD14060 Institutional support: RVO:68378271 Keywords : far-infrared transmission * NbN * ssuperconducting film * vortices * terahertz waves * parallel magnetic field Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 1.404, year: 2016

  19. On the relevance of diapycnal mixing for the stability of frontal meanders

    Directory of Open Access Journals (Sweden)

    A. Rodríguez-Santana

    2001-07-01

    Full Text Available This work examines the possible importance of shear-induced diapycnal mixing in controlling the evolution and stability of meanders in oceanic frontal jets. We first review the conditions necessary for vortex stability and investigate how these may be modified in the presence of diapycnal mixing. The procedure used is rather crude but provides a measure of the relative importance of diapycnal mixing. It consists in constructing a simplified equation for the radial velocity that retains the density tendency and examining under what circumstances this velocity may grow in time. Next, we use a simple two-dimensional isopycnic model to examine the intensity of diapycnal mixing in meanders. In the model the along-front velocity is in geostrophic balance and the ageostrophic contributions are an oscillating deformation field and diapycnal mass exchange. The horizontal deformation field increases the slope of the isopycnals in temporal scales typical of Gulf Stream meanders, causing a reduction of the gradient Richardson number, Ri. The diapycnal flux is calculated as the divergence of the density Reynolds flux, which is parameterized in terms of Ri. The results of the model show that diapycnal mixing increases during the frontogenetical stages, reaching density tendency values of the order of 10-4 kg m-3s-1 and convergence/divergence values of the order of 10-3 s-1. It turns out that diapycnal mixing in meanders may be intense enough to control the separation and slope of the isopycnals and to condition the possibility of barotropic instability.

  20. A nonlinear model of flow in meandering submarine and subaerial channels

    Science.gov (United States)

    Imran, Jasim; Parker, Gary; Pirmez, Carlos

    1999-12-01

    A generalized model of flow in meandering subaqueous and subaerial channels is developed. The conservation equations of mass and momentum are depth/layer integrated, normalized, and represented as deviations from a straight base state. This allows the determination of integrable forms which can be solved at both linear and nonlinear levels. The effects of various flow and geometric parameters on the flow dynamics are studied. Although the model is not limited to any specific planform, this study focuses on sine-generated curves. In analysing the flow patterns, the turbidity current of the subaqueous case is simplified to a conservative density flow with water entrainment from above neglected. The subaqueous model thus formally corresponds to a subcritical or only mildly supercritical mud-rich turbidity current. By extension, however the analysis can be applied to a depositional or erosional current carrying sand that is changing only slowly in the streamwise direction. By bringing the subaqueous and subaerial cases into a common form, flow behaviour in the two environments can be compared under similar geometric and boundary conditions. A major difference between the two cases is the degree of superelevation of channel flow around bends, which is modest in the subaerial case but substantial in the subaqueous case. Another difference concerns Coriolis effects: some of the largest subaqueous meandering systems are so large that Coriolis effects can become important. The model is applied to meander bends on the youngest channel in the mid-fan region of the Amazon Fan and a mildly sinuous bend of the North-West Atlantic Mid-Ocean Channel. In the absence of specific data on the turbid flows that created the channel, the model can be used to make inferences about the flow, and in particular the range of values of flow velocity and sediment concentration that would allow the growth and downfan migration of meander bends.

  1. Mechanical behavior enhancement of ZnO nanowire by embedding different nanowires

    Science.gov (United States)

    Vazinishayan, Ali; Yang, Shuming; Lambada, Dasaradha Rao; Wang, Yiming

    2018-06-01

    In this work, we employed commercial finite element modeling (FEM) software package ABAQUS to analyze mechanical properties of ZnO nanowire before and after embedding with different kinds of nanowires, having different materials and cross-section models such as Au (circular), Ag (pentagonal) and Si (rectangular) using three point bending technique. The length and diameter of the ZnO nanowire were measured to be 12,280 nm and 103.2 nm, respectively. In addition, Au, Ag and Si nanowires were considered to have the length of 12,280 nm and the diameter of 27 nm. It was found that after embedding Si nanowire with rectangular cross-section into the ZnO nanowire, the distribution of Von Misses stresses criterion, displacement and strain were decreased than the other nanowires embedded. The highest stiffness, the elastic deformation and the high strength against brittle failure have been made by Si nanowire comparison to the Au and Ag nanowires, respectively.

  2. High-performance zig-zag and meander inductors embedded in ferrite material

    International Nuclear Information System (INIS)

    Stojanovic, Goran; Damnjanovic, Mirjana; Desnica, Vladan; Zivanov, Ljiljana; Raghavendra, Ramesh; Bellew, Pat; Mcloughlin, Neil

    2006-01-01

    This paper describes the design, modeling, simulation and fabrication of zig-zag and meander inductors embedded in low- or high-permeability soft ferrite material. These microinductors have been developed with ceramic coprocessing technology. We compare the electrical properties of zig-zag and meander inductors structures installed as surface-mount devices. The equivalent model of the new structures is presented, suitable for design, circuit simulations and for prediction of the performance of proposed inductors. The relatively high impedance values allow these microinductors to be used in high-frequency suppressors. The components were tested in the frequency range of 1 MHz-3 GHz using an Agilent 4287A RF LCR meter. The measurements confirm the validity of the analytical model

  3. Controls on cutoff formation along a tropical meandering river in the Amazon Basin

    Science.gov (United States)

    Ahmed, J.; Constantine, J. A.

    2016-12-01

    The termination of meander bends is an inherent part of the evolution of meandering rivers. Cutoffs are produced by one of two mechanisms: neck cutoffs occur when two adjacent meanders converge, while chute cutoffs are generated by flood-driven floodplain incision, resulting in a shorter, steeper channel path. Here we use an annually-resolved record of Landsat imagery, coupled with daily discharge data to assess the role of high-magnitude discharges (Q ≥ QBF) on cutoff formation along the Rio Beni, Bolivia. Our results suggest that despite numerous above-bankfull events, the dominant cutoff mechanism operating on the Beni is neck cutoff. Evaluating the formation of these cutoffs reveals that migration rates accelerate during years of high discharge, and eventually cause the migrating bends to breach. The density of floodplain vegetation and the medium into which the channel migrated was also responsible for the patterns of cutoff documented along this river. The presence of existing floodplain channels permitted the river to divert its flow along shorter courses thereby facilitating cutoff, and limiting sinuosity growth. Understanding the long-term evolution of meandering channels is important since their morphodynamics are responsible for the creation of highly biodiverse riparian habitats, as well as the store and release of alluvial material. Moreover, the interactions between discharge and the channel-floodplain system are integral for the functioning and long-term evolution of these landscapes, particularly in the face of global climate change.

  4. Departure from BCS response in photoexcited superconducting NbN films observed by terahertz spectroscopy

    Czech Academy of Sciences Publication Activity Database

    Šindler, Michal; Kadlec, Christelle; Kužel, Petr; Il'in, K.; Siegel, M.; Němec, Hynek

    2018-01-01

    Roč. 97, č. 5 (2018), s. 1-5, č. článku 054507. ISSN 2469-9950 R&D Projects: GA ČR GA17-04412S Institutional support: RVO:68378271 Keywords : terahertz spectroscopy * NbN thin films * superconductors Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 3.836, year: 2016

  5. Experimental Research on Boundary Shear Stress in Typical Meandering Channel

    Science.gov (United States)

    Chen, Kai-hua; Xia, Yun-feng; Zhang, Shi-zhao; Wen, Yun-cheng; Xu, Hua

    2018-06-01

    A novel instrument named Micro-Electro-Mechanical System (MEMS) flexible hot-film shear stress sensor was used to study the boundary shear stress distribution in the generalized natural meandering open channel, and the mean sidewall shear stress distribution along the meandering channel, and the lateral boundary shear stress distribution in the typical cross-section of the meandering channel was analysed. Based on the measurement of the boundary shear stress, a semi-empirical semi-theoretical computing approach of the boundary shear stress was derived including the effects of the secondary flow, sidewall roughness factor, eddy viscosity and the additional Reynolds stress, and more importantly, for the first time, it combined the effects of the cross-section central angle and the Reynolds number into the expressions. Afterwards, a comparison between the previous research and this study was developed. Following the result, we found that the semi-empirical semi-theoretical boundary shear stress distribution algorithm can predict the boundary shear stress distribution precisely. Finally, a single factor analysis was conducted on the relationship between the average sidewall shear stress on the convex and concave bank and the flow rate, water depth, slope ratio, or the cross-section central angle of the open channel bend. The functional relationship with each of the above factors was established, and then the distance from the location of the extreme sidewall shear stress to the bottom of the open channel was deduced based on the statistical theory.

  6. Synthesis of Oxidation-Resistant Cupronickel Nanowires for Transparent Conducting Nanowire Networks

    Energy Technology Data Exchange (ETDEWEB)

    Rathmall, Aaron [Duke University; Nguyen, Minh [Duke University; Wiley, Benjamin J [Duke University

    2012-01-01

    Nanowires of copper can be coated from liquids to create flexible, transparent conducting films that can potentially replace the dominant transparent conductor, indium tin oxide, in displays, solar cells, organic light-emitting diodes, and electrochromic windows. One issue with these nanowire films is that copper is prone to oxidation. It was hypothesized that the resistance to oxidation could be improved by coating copper nanowires with nickel. This work demonstrates a method for synthesizing copper nanowires with nickel shells as well as the properties of cupronickel nanowires in transparent conducting films. Time- and temperature-dependent sheet resistance measurements indicate that the sheet resistance of copper and silver nanowire films will double after 3 and 36 months at room temperature, respectively. In contrast, the sheet resistance of cupronickel nanowires containing 20 mol % nickel will double in about 400 years. Coating copper nanowires to a ratio of 2:1 Cu:Ni gave them a neutral gray color, making them more suitable for use in displays and electrochromic windows. These properties, and the fact that copper and nickel are 1000 times more abundant than indium or silver, make cupronickel nanowires a promising alternative for the sustainable, efficient production of transparent conductors.

  7. The Slavic NBN Founder Mutation: A Role for Reproductive Fitness?

    Directory of Open Access Journals (Sweden)

    Eva Seemanova

    Full Text Available The vast majority of patients with Nijmegen Breakage Syndrome (NBS are of Slavic origin and carry a deleterious deletion (c.657del5; rs587776650 in the NBN gene on chromosome 8q21. This mutation is essentially confined to Slavic populations and may thus be considered a Slavic founder mutation. Notably, not a single parenthood of a homozygous c.657del5 carrier has been reported to date, while heterozygous carriers do reproduce but have an increased cancer risk. These observations seem to conflict with the considerable carrier frequency of c.657del5 of 0.5% to 1% as observed in different Slavic populations because deleterious mutations would be eliminated quite rapidly by purifying selection. Therefore, we propose that heterozygous c.657del5 carriers have increased reproductive success, i.e., that the mutation confers heterozygote advantage. In fact, in our cohort study of the reproductive history of 24 NBS pedigrees from the Czech Republic, we observed that female carriers gave birth to more children on average than female non-carriers, while no such reproductive differences were observed for males. We also estimate that c.657del5 likely occurred less than 300 generations ago, thus supporting the view that the original mutation predated the historic split and subsequent spread of the 'Slavic people'. We surmise that the higher fertility of female c.657del5 carriers reflects a lower miscarriage rate in these women, thereby reflecting the role of the NBN gene product, nibrin, in the repair of DNA double strand breaks and their processing in immune gene rearrangements, telomere maintenance, and meiotic recombination, akin to the previously described role of the DNA repair genes BRCA1 and BRCA2.

  8. Scanning tunneling spectroscopic studies of superconducting NbN single crystal thin films at 4.2 K

    International Nuclear Information System (INIS)

    Kashiwaya, S.; Koyanagi, M.; Matsuda, M.; Shoji, A.; Shibata, H.

    1991-01-01

    This paper reports on a Low Temperature Scanning Tunneling Microscope (LTSTM) constructed to study the microscopic properties of superconductors. It has atomic resolution from room temperature to 4.2 K. Conductance spectra obtained between a Pt tip and a NbN thin film agreed well with theoretical curves based on the BCS theory

  9. Hydrodynamic processes in sharp meander bends and their morphological implications

    NARCIS (Netherlands)

    Blanckaert, K.

    2011-01-01

    The migration rate of sharp meander bends exhibits large variance and indicates that some sharply curved bends tend to stabilize. These observations remain unexplained. This paper examines three hydrodynamic processes in sharp bends with fixed banks and discusses their morphological implications:

  10. Nanowire Lasers

    Directory of Open Access Journals (Sweden)

    Couteau C.

    2015-05-01

    Full Text Available We review principles and trends in the use of semiconductor nanowires as gain media for stimulated emission and lasing. Semiconductor nanowires have recently been widely studied for use in integrated optoelectronic devices, such as light-emitting diodes (LEDs, solar cells, and transistors. Intensive research has also been conducted in the use of nanowires for subwavelength laser systems that take advantage of their quasione- dimensional (1D nature, flexibility in material choice and combination, and intrinsic optoelectronic properties. First, we provide an overview on using quasi-1D nanowire systems to realize subwavelength lasers with efficient, directional, and low-threshold emission. We then describe the state of the art for nanowire lasers in terms of materials, geometry, andwavelength tunability.Next,we present the basics of lasing in semiconductor nanowires, define the key parameters for stimulated emission, and introduce the properties of nanowires. We then review advanced nanowire laser designs from the literature. Finally, we present interesting perspectives for low-threshold nanoscale light sources and optical interconnects. We intend to illustrate the potential of nanolasers inmany applications, such as nanophotonic devices that integrate electronics and photonics for next-generation optoelectronic devices. For instance, these building blocks for nanoscale photonics can be used for data storage and biomedical applications when coupled to on-chip characterization tools. These nanoscale monochromatic laser light sources promise breakthroughs in nanophotonics, as they can operate at room temperature, can potentially be electrically driven, and can yield a better understanding of intrinsic nanomaterial properties and surface-state effects in lowdimensional semiconductor systems.

  11. Offshore and onshore wind turbine wake meandering studied in an ABL wind tunnel

    DEFF Research Database (Denmark)

    Barlas, Emre; Buckingham, Sophia; Glabeke, Gertjan

    2015-01-01

    Scaled wind turbine models have been installed in the VKI L1-B atmospheric boundary layer wind tunnel at offshore and onshore conditions. Time-resolved measurements were carried out with three component hot wire anemometry and stereo-PIV in the middle vertical plane of the wake up to eleven turbine...... diameter downstream. The results show an earlier wake recovery for the onshore case. The effect of inflow conditions and the wind turbine’s working conditions on wake meandering was investigated. Wake meandering was detected by hot wire anemometry through a low frequency peak in the turbulent power...

  12. Preservation of meandering river channels in uniformly aggrading channel belts

    NARCIS (Netherlands)

    Lageweg, W.I. van de; Schuurman, F.; Cohen, K.M.; Dijk, W.M. van; Shimizu, Y.; Kleinhans, M.G.

    2016-01-01

    Channel belt deposits from meandering river systems commonly display an internal architecture of stacked depositional features with scoured basal contacts due to channel and bedform migration across a range of scales. Recognition and correct interpretation of these bounding surfaces is essential to

  13. Dielectric-based subwavelength metallic meanders for wide-angle band absorbers.

    Science.gov (United States)

    Shen, Su; Qiao, Wen; Ye, Yan; Zhou, Yun; Chen, Linsen

    2015-01-26

    We propose nano-meanders that can achieve wide-angle band absorption in visible regime. The nano-meander consists of a subwavelength dielectric grating covered by continuous ultra-thin Aluminum film (less than one tenth of the incident wavelength). The excited photonic resonant modes, such as cavity mode, surface plasmonic mode and Rayleigh-Wood anomaly, are discussed in detail. Nearly total resonant absorption due to funneling mechanism in the air nano-groove is almost invariant with large incident angle in transverse magnetic polarization. From both the structural geometry and the nanofabrication point of view, the light absorber has a very simple geometrical structure and it is easy to be integrated into complex photonic devices. The highly efficient angle-robust light absorber can be potential candidate for a range of passive and active photonic applications, including solar-energy harvesting as well as producing artificial colors on a large scale substrate.

  14. Application of a Steady Meandering River with Piers Using a Lattice Boltzmann Sub-Grid Model in Curvilinear Coordinate Grid

    Directory of Open Access Journals (Sweden)

    Liping Chen

    2018-05-01

    Full Text Available A sub-grid multiple relaxation time (MRT lattice Boltzmann model with curvilinear coordinates is applied to simulate an artificial meandering river. The method is based on the D2Q9 model and standard Smagorinsky sub-grid scale (SGS model is introduced to simulate meandering flows. The interpolation supplemented lattice Boltzmann method (ISLBM and the non-equilibrium extrapolation method are used for second-order accuracy and boundary conditions. The proposed model was validated by a meandering channel with a 180° bend and applied to a steady curved river with piers. Excellent agreement between the simulated results and previous computational and experimental data was found, showing that MRT-LBM (MRT lattice Boltzmann method coupled with a Smagorinsky sub-grid scale (SGS model in a curvilinear coordinates grid is capable of simulating practical meandering flows.

  15. Examining the physical meaning of the bank erosion coefficient used in meander migration modeling

    Science.gov (United States)

    Constantine, Candice R.; Dunne, Thomas; Hanson, Gregory J.

    2009-05-01

    Widely used models of meander evolution relate migration rate to vertically averaged near-bank velocity through the use of a coefficient of bank erosion ( E). In applications to floodplain management problems, E is typically determined through calibration to historical planform changes, and thus its physical meaning remains unclear. This study attempts to clarify the extent to which E depends on measurable physical characteristics of the channel boundary materials using data from the Sacramento River, California, USA. Bend-average values of E were calculated from measured long-term migration rates and computed near-bank velocities. In the field, unvegetated bank material resistance to fluvial shear ( k) was measured for four cohesive and noncohesive bank types using a jet-test device. At a small set of bends for which both E and k were obtained, we discovered that variability in k explains much of the variability in E. The form of this relationship suggests that when modeling long-term meander migration of large rivers, E depends largely on bank material properties. This finding opens up the possibility that E may be estimated directly from field data, enabling prediction of meander migration rates for systems where historical data are unavailable or controlling conditions have changed. Another implication is that vegetation plays a limited role in affecting long-term meander migration rates of large rivers like the Sacramento River. These hypotheses require further testing with data sets from other large rivers.

  16. Numerical analysis and modeling of plume meandering in passive scalar dispersion downstream of a wall-mounted cube

    International Nuclear Information System (INIS)

    Rossi, R.; Iaccarino, G.

    2013-01-01

    Highlights: • Scalar dispersion downstream of a wall-mounted cube is examined by DNS and RANS models. • Vortex-shedding and plume meandering are established in the wake of the cube. • Low-frequency modulation is observed in the vortex-shedding and plume meandering. • Counter-gradient transport takes place in the streamwise component of the scalar flux. • Concentration decay and plume spread improved by the unsteady RANS model. -- Abstract: A DNS database is employed to examine the onset of plume meandering downstream of a wall-mounted cube and to address the impact of large-scale unsteadiness in modeling dispersion using the RANS equations. The cube is immersed in a uniform stream where the thin boundary-layer developing over the flat plate is responsible for the onset of vortex-shedding in the wake of the bluff-body. Spectra of velocity and concentration fluctuations exhibit a prominent peak in the energy content at the same frequency, showing that the plume meandering is established by the action of the vortex-shedding. The vortex-shedding and plume meandering display a low-frequency modulation where coherent fluctuations are suppressed at times with a quasi-regular period. The onset of the low-frequency modulation is indicated by a secondary peak in the energy spectrum and confirmed by the autocorrelation of velocity and scalar fluctuations. Unsteady RANS simulations performed with the v 2 − f model are able to detect the onset of the plume meandering and show remarkable improvement of the predicted decay rate and rate of spread of the scalar plume when compared to steady RANS solutions. By computing explicitly the periodic component of velocity and scalar fluctuations, the unsteady v 2 − f model is able to provide a representation of scalar flux components consistent with DNS statistics, where the counter-gradient transport mechanism that takes place in the streamwise component is also captured by URANS results. Nonetheless, the agreement with DNS

  17. Ga lithography in sputtered niobium for superconductive micro and nanowires

    International Nuclear Information System (INIS)

    Henry, M. David; Wolfley, Steve; Monson, Todd; Lewis, Rupert

    2014-01-01

    This work demonstrates the use of focused ion beam (FIB) implanted Ga as a lithographic mask for plasma etching of Nb films. Using a highly collimated Ga beam of a FIB, Nb is implanted 12 nm deep with a 14 nm thick Ga layer providing etch selectivity better than 15:1 with fluorine based etch chemistry. Implanted square test patterns, both 10 μm by 10 μm and 100 μm by 100 μm, demonstrate that doses above than 7.5 × 10 15  cm −2 at 30 kV provide adequate mask protection for a 205 nm thick, sputtered Nb film. The resolution of this dry lithographic technique is demonstrated by fabrication of nanowires 75 nm wide by 10 μm long connected to 50 μm wide contact pads. The residual resistance ratio of patterned Nb films was 3. The superconducting transition temperature (T c ) = 7.7 K was measured using a magnetic properties measurement system. This nanoscale, dry lithographic technique was extended to sputtered TiN and Ta here and could be used on other fluorine etched superconductors such as NbN, NbSi, and NbTi.

  18. Influence factors of the inter-nanowire thermal contact resistance in the stacked nanowires

    Science.gov (United States)

    Wu, Dongxu; Huang, Congliang; Zhong, Jinxin; Lin, Zizhen

    2018-05-01

    The inter-nanowire thermal contact resistance is important for tuning the thermal conductivity of a nanocomposite for thermoelectric applications. In this paper, the stacked copper nanowires are applied for studying the thermal contact resistance. The stacked copper nanowires are firstly made by the cold-pressing method, and then the nanowire stacks are treated by sintering treatment. With the effect of the volumetric fraction of nanowires in the stack and the influence of the sintering-temperature on the thermal contact resistance discussed, results show that: The thermal conductivity of the 150-nm copper nanowires can be enlarged almost 2 times with the volumetric fraction increased from 32 to 56% because of the enlarged contact-area and contact number of a copper nanowire. When the sintering temperature increases from 293 to 673 K, the thermal conductivity of the stacked 300-nm nanowires could be enlarged almost 2.5 times by the sintering treatment, because of the improved lattice property of the contact zone. In conclusion, application of a high volumetric fraction or/and a sintering-treatment are effectivity to tune the inter-nanowire thermal contact resistance, and thus to tailor the thermal conductivity of a nanowire network or stack.

  19. A simplified approach for simulation of wake meandering

    Energy Technology Data Exchange (ETDEWEB)

    Thomsen, Kenneth; Aagaard Madsen, H.; Larsen, Gunner; Juul Larsen, T.

    2006-03-15

    This fact-sheet describes a simplified approach for a part of the recently developed dynamic wake model for aeroelastic simulations for wind turbines operating in wake. The part described in this fact-sheet concern the meandering process only, while the other part of the simplified approach the wake deficit profile is outside the scope of the present fact-sheet. Work on simplified models for the wake deficit profile is ongoing. (au)

  20. Unexpected nonlinear effects and critical coupling in NbN superconducting microwave resonators

    International Nuclear Information System (INIS)

    Abdo, B.; Buks, E.

    2004-01-01

    Full Text:In this work, we have designed and fabricated several NbN superconducting stripline microwave resonators sputtered on sapphire substrates. The low temperature response exhibits strong and unexpected nonlinear effects, including sharp jumps as the frequency or poser are varied, frequency hysteresis loops changing direction as the input power is varied, and others. Contrary to some other superconducting resonators, a simple model of a one-dimensional Duffing resonator cannot account for the experimental results. Whereas the physical origin of the unusual nonlinear response of our samples remains an open question, our intensive experimental study of these effects under varying conditions provides some important insight. We consider a hypothesis according to which Josephson junctions forming weak links between the grains of the NbN are responsible for the observed behavior. We show that most of the experimental results are qualitatively consistent with such hypothesis. While revealing the underlying physics remains an outstanding challenge for future research, the utilization of the unusual nonlinear response for some novel applications is already demonstrated in the present work. In particular an operate the resonator as an inter modulation amplifier and find that the gain can be as high as 15 dB. To the best of our knowledge, inter modulation gain greater than unity has not been reported before in the scientific literature. In another application we demonstrate for the first time that the coupling between the resonator and its feed line can be made amplitude dependent. This novel mechanism allows us to tune the resonator into critical coupling conditions

  1. Design of Meander-Line Antennas for Radio Frequency Identification Based on Multiobjective Optimization

    Directory of Open Access Journals (Sweden)

    X. L. Travassos

    2012-01-01

    Full Text Available This paper presents optimization problem formulations to design meander-line antennas for passive UHF radio frequency identification tags based on given specifications of input impedance, frequency range, and geometric constraints. In this application, there is a need for directive transponders to select properly the target tag, which in turn must be ideally isotropic. The design of an effective meander-line antenna for RFID purposes requires balancing geometrical characteristics with the microchip impedance. Therefore, there is an issue of optimization in determining the antenna parameters for best performance. The antenna is analyzed by a method of moments. Some results using a deterministic optimization algorithm are shown.

  2. Experimental study of flux pinning in NbN films and multilayers: Ultimate limits on critical currents in superconductors

    International Nuclear Information System (INIS)

    Gray, K.E.; Kampwirth, R.T.; Capone, D.W. II; Murduck, J.M.

    1988-08-01

    A flux pinning model is presented which predicts the maximum critical current density attainable in superconductors. That such a limit must exist comes from the realization that flux pinning is strongest in regions of weak superconductivity, but these regions cannot carry a large supercurrent. Since the same regions within the superconductor cannot be used for both pinning and supercurrent conductions, there must be an optimum mix, leading to a maximum J/sub c/. Measurements on films and multilayers of NbN have verified many details of the model including anisotropy effects and a strong reduction in J/sub c/ for defect spacings smaller than the flux core diameter. In an optimized multilayer the pinning force reached /approximately/22% of the theoretical maximum. The implications of these results on the practical applications of NbN films and on the maximum critical current density in the new high temperature superconductors are also discussed. 24 refs., 4 figs

  3. Nanowire Photovoltaic Devices

    Science.gov (United States)

    Forbes, David

    2015-01-01

    Firefly Technologies, in collaboration with the Rochester Institute of Technology and the University of Wisconsin-Madison, developed synthesis methods for highly strained nanowires. Two synthesis routes resulted in successful nanowire epitaxy: direct nucleation and growth on the substrate and a novel selective-epitaxy route based on nanolithography using diblock copolymers. The indium-arsenide (InAs) nanowires are implemented in situ within the epitaxy environment-a significant innovation relative to conventional semiconductor nanowire generation using ex situ gold nanoparticles. The introduction of these nanoscale features may enable an intermediate band solar cell while simultaneously increasing the effective absorption volume that can otherwise limit short-circuit current generated by thin quantized layers. The use of nanowires for photovoltaics decouples the absorption process from the current extraction process by virtue of the high aspect ratio. While no functional solar cells resulted from this effort, considerable fundamental understanding of the nanowire epitaxy kinetics and nanopatterning process was developed. This approach could, in principle, be an enabling technology for heterointegration of dissimilar materials. The technology also is applicable to virtual substrates. Incorporating nanowires onto a recrystallized germanium/metal foil substrate would potentially solve the problem of grain boundary shunting of generated carriers by restricting the cross-sectional area of the nanowire (tens of nanometers in diameter) to sizes smaller than the recrystallized grains (0.5 to 1 micron(exp 2).

  4. Miniaturized Printed Inverted-F Antenna for Internet of Things: A Design on PCB with a Meandering Line and Shorting Strip

    Directory of Open Access Journals (Sweden)

    Cheuk Yin Cheung

    2018-01-01

    Full Text Available This paper focuses on a printed inverted-F antenna (PIFA with meandering line and meandering shorting strip under 2.4 GHz industrial, scientific, and medical (ISM band for Internet of things (IoT applications. Bluetooth Low Energy (BLE technology is one of potential platforms and technologies for IoT applications under ISM band. Printed circuit board (PCB antenna commonly used in commercial and medical applications because of its small size, low profile, and low cost compared to low temperature cofired ceramic (LTCC technology. The proposed structure of PIFA is implemented on PCB to gain all these advantages. Replacing conventional PCB line in PIFA by the meandering line and meandering shorting strip improves the efficiency of the PIFA as well as the bandwidth. As a case study, design and measurement results of the proposed PIFA are presented.

  5. Nanowire Growth for Photovoltaics

    DEFF Research Database (Denmark)

    Holm, Jeppe Vilstrup

    Solar cells commercial success is based on an efficiency/cost calculation. Nanowire solar cells is one of the foremost candidates to implement third generation photo voltaics, which are both very efficient and cheap to produce. This thesis is about our progress towards commercial nanowire solar...... cells. Resonance effects between the light and nanowire causes an inherent concentration of the sunlight into the nanowires, and means that a sparse array of nanowires (less than 5% of the area) can absorb all the incoming light. The resonance effects, as well as a graded index of refraction, also traps...... the light. The concentration and light trapping means that single junction nanowire solar cells have a higher theoretical maximum efficiency than equivalent planar solar cells. We have demonstrated the built-in light concentration of nanowires, by growing, contacting and characterizing a solar cell...

  6. The Spatial Distribution of Bed Sediment on Fluvial System: A Mini Review of the Aceh Meandering River

    Directory of Open Access Journals (Sweden)

    Muhammad Irham

    2016-08-01

    Full Text Available Dynamic interactions of hydrological and geomorphological processes in the fluvial system result in accumulated deposit on the bed because the capacity to carry sediment has been exceeded. The bed load of the Aceh fluvial system is primarily generated by mechanical weathering resulting in boulders, pebbles, and sand, which roll or bounce along the river bed forming temporary deposits as bars on the insides of meander bends, as a result of a loss of transport energy in the system. This dynamic controls the style and range of deposits in the Aceh River. This study focuses on the spatial distribution of bed-load transport of the Aceh River. Understanding the spatial distribution of deposits facilitates the reconstruction of the changes in controlling factors during accumulation of deposits. One of the methods can be done by sieve analysis of sediment, where the method illuminates the distribution of sediment changes associated with channel morphology under different flow regimes. Hence, the purpose of this mini review is to investigate how the sediment along the river meander spatially dispersed. The results demonstrate that channel deposits in the Aceh River are formed from four different type of materials: pebble deposited along upstream left bank; sand located on the upstream, downstream, and along meander belts; and silt and clay located along the cut bank of meander bends. Because of different depositional pattern, the distribution of the sediment along the river can be used as a surrogate to identify bank stability, as well as to predict critical geometry for meander bend initiation

  7. Influence of riparian vegetation on near-bank flow structure and erosion rates on a large meandering river

    Science.gov (United States)

    Konsoer, K. M.; Rhoads, B. L.; Langendoen, E. J.; Johnson, K.; Ursic, M.

    2012-12-01

    Rates of meander migration are dependent upon dynamic interactions between planform geometry, three-dimensional flow structure, sediment transport, and the erodibility and geotechnical properties of the channel banks and floodplains. Riparian vegetation can greatly reduce the rate of migration through root-reinforcement and increased flow resistance near the bank. In particular, forested riverbanks can also provide large woody debris (LWD) to the channel, and if located near the outer bank, can act to amour the bank by disrupting three-dimensional flow patterns and redirecting flow away from the bank-toe, the locus of erosion in meandering rivers. In this paper, three-dimensional flow patterns and migration rates are compared for two meander bends, one forested and one non-forested, on the Wabash River, near Grayville, Illinois. Flow data were obtained using acoustic Doppler current profilers (ADCP) for two large flow events in May and June 2011. LWD was mapped using a terrestrial LiDAR survey, and residence times for the LWD were estimated by comparing the survey data to time-series aerial photography. Rates of migration and planform evolution were determined through time-series analysis of aerial photography from 1938-2011. Results from this study show that near-bank LWD can have a significant influence on flow patterns through a meander bend and can disrupt helical flow near the outer bank, thereby reducing the effect of the high velocity core on the toe of the bank. Additionally, these effects influence migration rates and the planform evolution of meandering rivers.

  8. Functionalised Silver Nanowire Structures

    International Nuclear Information System (INIS)

    Andrew, Piers; Ilie, Adelina

    2007-01-01

    Crystalline silver nanowires 60-100 nm in diameter and tens of micrometres in length have been fabricated using a low temperature, solution synthesis technique. We explore the potential of this method to produce functional nanowire structures using two different strategies to attach active molecules to the nanowires: adsorption and displacement. Initially, as-produced silver nanowires capped with a uniaxial-growth-inducing polymer layer were functionalised by solution adsorption of a semiconducting conjugated polymer to generate fluorescent nanowire structures. The influence of nanowire surface chemistry was investigated by displacing the capping polymer with an alkanethiol self-assembled monolayer, followed by solution adsorption functionalisation. The success of molecular attachment was monitored by electron microscopy, absorption and fluorescence spectroscopy and confocal fluorescence microscopy. We examined how the optical properties of such adsorbed molecules are affected by the metallic nanowires, and observed transfer of excitation energy between dye molecules mediated by surface plasmons propagating on the nanowires. Non-contact dynamic force microscopy measurements were used to map the work-function of individual wires, revealing inhomogeneity of the polymer surface coverage

  9. Numerical simulation of sediment movement and deposition in a meandering channel

    International Nuclear Information System (INIS)

    Ghani, U.

    2011-01-01

    In this research work, predictions have been made for the transport and deposition of incoming sediments in an open channel. Attempt has been made to understand the behavior of sediments flowing in the channel. The geometry consisted of a meandering compound channel with a constant inflow of sediments. For this purpose, 3D version of CFD (Computational Fluid Dynamics) code FLUENT has been used as a research tool. The turbulence closure of Reynolds Averaged Navior-Stokes equation was performed with standard -turbulence model. The Lagrangian particle tracking technique available in the code has been used for modeling sediment movement and deposition. For this purpose, nine different ranges of the particle diameters were released at the inlet of the channel. Initially, the model was validated using point velocities in the downstream direction and discharge values at five cross sections along the meander wavelength. The channel used for simulation purposes had a rectangular section. Once the model validated, it was then used for simulation of sediments. The numerical modeling gave a detailed picture of sediment deposited and transported through the channel. As the model was used with - turbulence model and Lagrangian particle tracking technique and then validated, it showed that when this combination of particle tracking and turbulence closure option will be used, the prediction will be fairly good and trustworthy. A number of numerical experiments were conducted to get the impact of sediment inflow velocity and its diameter on deposition patterns. It showed that boundary shearing stresses and secondary flows had considerable impact on sediment deposition in a river bend. The current study revealed that CFD technique can be used for predicting sediment distribution patterns with reasonable confidence. Such prediction techniques are not only economical but also provide details of complex flow and sediment movement behavior which are difficult to get through

  10. Testing the role of meander cutoff in promoting gene flow across a riverine barrier in ground skinks (Scincella lateralis.

    Directory of Open Access Journals (Sweden)

    Nathan D Jackson

    Full Text Available Despite considerable attention, the long-term impact of rivers on species diversification remains uncertain. Meander loop cutoff (MLC is one river phenomenon that may compromise a river's diversifying effects by passively transferring organisms from one side of the river to the other. However, the ability of MLC to promote gene flow across rivers has not been demonstrated empirically. Here, we test several predictions of MLC-mediated gene flow in populations of North American ground skinks (Scincella lateralis separated by a well-established riverine barrier, the Mississippi River: 1 individuals collected from within meander cutoffs should be more closely related to individuals across the river than on the same side, 2 individuals within meander cutoffs should contain more immigrants than individuals away from meander cutoffs, 3 immigration rates estimated across the river should be highest in the direction of the cutoff event, and 4 the distribution of alleles native to one side of the river should be better predicted by the historical rather than current path of the river. To test these predictions we sampled 13 microsatellite loci and mitochondrial DNA from ground skinks collected near three ancient meander loops. These predictions were generally supported by genetic data, although support was stronger for mtDNA than for microsatellite data. Partial support for genetic divergence of samples within ancient meander loops also provides evidence for the MLC hypothesis. Although a role for MLC-mediated gene flow was supported here for ground skinks, the transient nature of river channels and morphologies may limit the long-term importance of MLC in stemming population divergence across major rivers.

  11. Topological insulator nanowires and nanowire hetero-junctions

    Science.gov (United States)

    Deng, Haiming; Zhao, Lukas; Wade, Travis; Konczykowski, Marcin; Krusin-Elbaum, Lia

    2014-03-01

    The existing topological insulator materials (TIs) continue to present a number of challenges to complete understanding of the physics of topological spin-helical Dirac surface conduction channels, owing to a relatively large charge conduction in the bulk. One way to reduce the bulk contribution and to increase surface-to-volume ratio is by nanostructuring. Here we report on the synthesis and characterization of Sb2Te3, Bi2Te3 nanowires and nanotubes and Sb2Te3/Bi2Te3 heterojunctions electrochemically grown in porous anodic aluminum oxide (AAO) membranes with varied (from 50 to 150 nm) pore diameters. Stoichiometric rigid polycrystalline nanowires with controllable cross-sections were obtained using cell voltages in the 30 - 150 mV range. Transport measurements in up to 14 T magnetic fields applied along the nanowires show Aharonov-Bohm (A-B) quantum oscillations with periods corresponding to the nanowire diameters. All nanowires were found to exhibit sharp weak anti-localization (WAL) cusps, a characteristic signature of TIs. In addition to A-B oscillations, new quantization plateaus in magnetoresistance (MR) at low fields (< 0 . 7T) were observed. The analysis of MR as well as I - V characteristics of heterojunctions will be presented. Supported in part by NSF-DMR-1122594, NSF-DMR-1312483-MWN, and DOD-W911NF-13-1-0159.

  12. An inkjet printed meandered dipole antenna for RF passive sensing applications

    KAUST Repository

    Quddious, Abdul; Khan, Munawar M.; Tahir, Farooq A.; Shamim, Atif; Cheema, Hammad M.

    2016-01-01

    In this paper, a low cost inkjet printed antenna envisioned for integration with printed and non-printed RF sensors is presented. The proposed meandered dipole dual-loop antenna is designed on a 0.25mm thick paper substrate. The antenna not only

  13. Observation of meander pattern in signals from superconducting MgB{sub 2} detector by scanning pulsed laser imaging

    Energy Technology Data Exchange (ETDEWEB)

    Ishida, Takekazu, E-mail: ishida@center.osakafu-u.ac.jp [Department of Physics and Electronics, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai, Osaka 599-8531 (Japan); Institute for Nanofabrication Research, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai, Osaka 599-8531 (Japan); Yagi, Ikutaro; Yoshioka, Naohito; Huy, Ho Thanh [Department of Physics and Electronics, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai, Osaka 599-8531 (Japan); Yotsuya, Tsutomu [Institute for Nanofabrication Research, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai, Osaka 599-8531 (Japan); Nanoscience and Nanotechnology Research Center, Osaka Prefecture University, 2-1 Gakuen-cho, Naka-ku, Sakai, Osaka 599-8570 (Japan); Shimakage, Hisashi [Department of Electrical and Electronic Engineering, College of Engineering, 4-12-1, Nakanarusawa, Hitachi, Ibaraki 316-8511 (Japan); Miki, Shigehito [Kansai Advanced Research Center, National Institute of Information and Communications Technology, 588-2 Iwaoka-cho, Nishi-ku, Kobe, Hyogo 651-2429 (Japan); Wang, Zhen [Institute for Nanofabrication Research, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai, Osaka 599-8531 (Japan); Kansai Advanced Research Center, National Institute of Information and Communications Technology, 588-2 Iwaoka-cho, Nishi-ku, Kobe, Hyogo 651-2429 (Japan)

    2013-01-15

    Highlights: ► We fabricate a superconducting MgB{sub 2} meander detector as a solid-state neutron detector. ► MgB{sub 2} detector uses XYZ stage, optical fiber and focused lens to scan as a microscope. ► The 6 μm line-and-space in meandering pattern can be resolved in signals against pulsed laser. -- Abstract: Superconducting MgB{sub 2} meander detector has been imaged by scanning a spot of 1.5-μm focused pulsed laser. The superconducting detector using high-quality {sup 10}B-enriched MgB{sub 2} thin films at higher operating temperatures has been fabricated to utilize a resistance change induced by the nuclear energy of {sup 10}B and neutron. The MgB{sub 2} detector consists of a 200-nm-thick MgB{sub 2} thin-film meander line, a 300-nm-thick SiO protective layer, and 150-nm-thick Nb electrodes with 1-μm MgB{sub 2} wires. The devices were placed in a 4 K refrigerator to control at a certain temperature below T{sub c}. A scanning laser spot can be used by the combination of the XYZ piezo-drive stage and an optical fibre with an aspheric focused lens. The measurement system is fully controlled by LabVIEW based software. We succeeded in observing a line-and-space image of a meandering pattern by analysing response signals.

  14. Nanowire structures and electrical devices

    Science.gov (United States)

    Bezryadin, Alexey; Remeika, Mikas

    2010-07-06

    The present invention provides structures and devices comprising conductive segments and conductance constricting segments of a nanowire, such as metallic, superconducting or semiconducting nanowire. The present invention provides structures and devices comprising conductive nanowire segments and conductance constricting nanowire segments having accurately selected phases including crystalline and amorphous states, compositions, morphologies and physical dimensions, including selected cross sectional dimensions, shapes and lengths along the length of a nanowire. Further, the present invention provides methods of processing nanowires capable of patterning a nanowire to form a plurality of conductance constricting segments having selected positions along the length of a nanowire, including conductance constricting segments having reduced cross sectional dimensions and conductance constricting segments comprising one or more insulating materials such as metal oxides.

  15. Organic Nanowires

    DEFF Research Database (Denmark)

    Balzer, Frank; Schiek, Manuela; Al-Shamery, Katharina

    Single crystalline nanowires from fluorescing organic molecules like para-phenylenes or thiophenes are supposed to become key elements in future integrated optoelectronic devices [1]. For a sophisticated design of devices based on nanowires the basic principles of the nanowire formation have...... atomic force microscopy and from polarized far-field optical microscopy for various prototypical molecules are reproduced by electrostatic and Monte Carlo calculations. Based on the crystal structure, predictions on the growth habit from other conjugated molecules become in reach....

  16. Fabrication of multilayer nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Kaur, Jasveer, E-mail: kaurjasveer89@gmail.com; Singh, Avtar; Kumar, Davinder [Department of Physics, Punjabi University Patiala, 147002, Punjab (India); Thakur, Anup; Kaur, Raminder, E-mail: raminder-k-saini@yahoo.com [Department of Basic and Applied Sciences, Punjabi University Patiala, 147002, Punjab (India)

    2016-05-06

    Multilayer nanowires were fabricated by potentiostate ectrodeposition template synthesis method into the pores of polycarbonate membrane. In present work layer by layer deposition of two different metals Ni and Cu in polycarbonate membrane having pore size of 600 nm were carried out. It is found that the growth of nanowires is not constant, it varies with deposition time. Scanning electron microscopy (SEM) is used to study the morphology of fabricated multilayer nanowires. An energy dispersive X-ray spectroscopy (EDS) results confirm the composition of multilayer nanowires. The result shows that multilayer nanowires formed is dense.

  17. Fabrication of multilayer nanowires

    International Nuclear Information System (INIS)

    Kaur, Jasveer; Singh, Avtar; Kumar, Davinder; Thakur, Anup; Kaur, Raminder

    2016-01-01

    Multilayer nanowires were fabricated by potentiostate ectrodeposition template synthesis method into the pores of polycarbonate membrane. In present work layer by layer deposition of two different metals Ni and Cu in polycarbonate membrane having pore size of 600 nm were carried out. It is found that the growth of nanowires is not constant, it varies with deposition time. Scanning electron microscopy (SEM) is used to study the morphology of fabricated multilayer nanowires. An energy dispersive X-ray spectroscopy (EDS) results confirm the composition of multilayer nanowires. The result shows that multilayer nanowires formed is dense.

  18. TiO2 nanowire-templated hierarchical nanowire network as water-repelling coating

    Science.gov (United States)

    Hang, Tian; Chen, Hui-Jiuan; Xiao, Shuai; Yang, Chengduan; Chen, Meiwan; Tao, Jun; Shieh, Han-ping; Yang, Bo-ru; Liu, Chuan; Xie, Xi

    2017-12-01

    Extraordinary water-repelling properties of superhydrophobic surfaces make them novel candidates for a great variety of potential applications. A general approach to achieve superhydrophobicity requires low-energy coating on the surface and roughness on nano- and micrometre scale. However, typical construction of superhydrophobic surfaces with micro-nano structure through top-down fabrication is restricted by sophisticated fabrication techniques and limited choices of substrate materials. Micro-nanoscale topographies templated by conventional microparticles through surface coating may produce large variations in roughness and uncontrollable defects, resulting in poorly controlled surface morphology and wettability. In this work, micro-nanoscale hierarchical nanowire network was fabricated to construct self-cleaning coating using one-dimensional TiO2 nanowires as microscale templates. Hierarchical structure with homogeneous morphology was achieved by branching ZnO nanowires on the TiO2 nanowire backbones through hydrothermal reaction. The hierarchical nanowire network displayed homogeneous micro/nano-topography, in contrast to hierarchical structure templated by traditional microparticles. This hierarchical nanowire network film exhibited high repellency to both water and cell culture medium after functionalization with fluorinated organic molecules. The hierarchical structure templated by TiO2 nanowire coating significantly increased the surface superhydrophobicity compared to vertical ZnO nanowires with nanotopography alone. Our results demonstrated a promising strategy of using nanowires as microscale templates for the rational design of hierarchical coatings with desired superhydrophobicity that can also be applied to various substrate materials.

  19. Jet meandering by a foil pitching in quiescent fluid

    Science.gov (United States)

    Shinde, Sachin Y.; Arakeri, Jaywant H.

    2013-04-01

    The flow produced by a rigid symmetric NACA0015 airfoil purely pitching at a fixed location in quiescent fluid (the limiting case of infinite Strouhal number) is studied using visualizations and particle image velocimetry. A weak jet is generated whose inclination changes continually with time. This meandering is observed to be random and independent of the initial conditions, over a wide range of pitching parameters.

  20. Flow Patterns and Morphological Changes in a Sandy Meander Bend during a Flood—Spatially and Temporally Intensive ADCP Measurement Approach

    Directory of Open Access Journals (Sweden)

    Elina Kasvi

    2017-02-01

    Full Text Available The fluvio-geomorphological processes in meander bends are spatially uneven in distribution. Typically, higher velocities and erosion take place near the outer bank beyond the bend apex, while the inner bend point bar grows laterally towards the outer bank, increasing the bend amplitude. These dynamics maintain the meander evolution. Even though this development is found in meandering rivers independent of soil or environmental characteristics, each river still seems to behave unpredictably. The special mechanisms that determine the rate and occasion of morphological changes remain unclear. The aim of this study is to offer new insights regarding flow-induced morphological changes in meander using a novel study approach. We focused on short-term and small-spatial-scale changes by conducting a spatially and temporally (daily intensive survey during a flood (a period of nine days with an ADCP attached to a remotely controlled mini-boat. Based on our analysis, the flood duration and the rate of discharge increase and decrease seems to play key roles in determining channel changes by controlling the flow velocities and depth and the backwater effect may have notable influence on the morphological processes. We discuss themes such as the interaction of inner and outer bend processes and the longer-term development of meander bends.

  1. Distributary channel meandering and bifurcation patterns on the Amazon deep-sea fan as revealed by long-range side-scan sonar (GLORIA)

    Science.gov (United States)

    Damuth, John E.; Kolla, Venkatarathnam; Flood, Roger D.; Kowsmann, Renato O.; Monteiro, Marcelo C.; Gorini, Marcus A.; Palma, Jorge J. C.; Belderson, Robert H.

    1983-02-01

    We mapped the distributary channel system of the Amazon deep-sea fan using the GLORIA long-range side-scan sonar. Individual channels were continuously traced for distances of up to 150 km. Channel bifurcation, although observed in only a few places, results in many cases from breaching of channel levees on the outsides of meander loops. Whether both channels remain active after branching or the original channel is abandoned by avulsion generally cannot be determined. The most striking channel characteristic is high sinuosity that results in extensive, intricate, often recurving meanders. Cutoffs and abandoned meander loops (oxbows) are observed in a few places. These meandering channels are comparable in size and appearance to those of mature fluvial systems on land, such as on the lower Mississippi River. The formation, maintenance, and modification of such extensive, well-developed meander systems would seem to require large volumes of continuous turbidity flow through the channels for relatively long time periods. This may challenge the traditional concept that channel formation and modification are accomplished by intermittent or sporadic turbidity-current events. *Present address: Superior Oil Company, 12401 Westheimer, Houston, Texas 77077

  2. Electrochemically grown rough-textured nanowires

    International Nuclear Information System (INIS)

    Tyagi, Pawan; Postetter, David; Saragnese, Daniel; Papadakis, Stergios J.; Gracias, David H.

    2010-01-01

    Nanowires with a rough surface texture show unusual electronic, optical, and chemical properties; however, there are only a few existing methods for producing these nanowires. Here, we describe two methods for growing both free standing and lithographically patterned gold (Au) nanowires with a rough surface texture. The first strategy is based on the deposition of nanowires from a silver (Ag)-Au plating solution mixture that precipitates an Ag-Au cyanide complex during electrodeposition at low current densities. This complex disperses in the plating solution, thereby altering the nanowire growth to yield a rough surface texture. These nanowires are mass produced in alumina membranes. The second strategy produces long and rough Au nanowires on lithographically patternable nickel edge templates with corrugations formed by partial etching. These rough nanowires can be easily arrayed and integrated with microscale devices.

  3. Precise Placement of Metallic Nanowires on a Substrate by Localized Electric Fields and Inter-Nanowire Electrostatic Interaction

    Directory of Open Access Journals (Sweden)

    U Hyeok Choi

    2017-10-01

    Full Text Available Placing nanowires at the predetermined locations on a substrate represents one of the significant hurdles to be tackled for realization of heterogeneous nanowire systems. Here, we demonstrate spatially-controlled assembly of a single nanowire at the photolithographically recessed region at the electrode gap with high integration yield (~90%. Two popular routes, such as protruding electrode tips and recessed wells, for spatially-controlled nanowire alignment, are compared to investigate long-range dielectrophoretic nanowire attraction and short-range nanowire-nanowire electrostatic interaction for determining the final alignment of attracted nanowires. Furthermore, the post-assembly process has been developed and tested to make a robust electrical contact to the assembled nanowires, which removes any misaligned ones and connects the nanowires to the underlying electrodes of circuit.

  4. Bank retreat of a meandering river reach case study : River Irwell

    NARCIS (Netherlands)

    Duran, R.; Beevers, L.; Crosato, A.; Wright, N.G.

    2009-01-01

    Lack of data is often considered a limitation when undertaking morphological studies. This research deals with the morphological study of a small river experiencing bank erosion for which only limited data are available. A reach of the meandering gravel-bed river Irwell (United Kingdom) is taken as

  5. Tailoring the surface chemical bond states of the NbN films by doping Ag: Achieving hard hydrophobic surface

    Energy Technology Data Exchange (ETDEWEB)

    Ren, Ping; Zhang, Kan; Du, Suxuan [Department of Materials Science, State Key Laboratory of Superhard Materials, and Key Laboratory of Automobile Materials, MOE, Jilin University, Changchun, 130012 (China); Meng, Qingnan [College of Construction Engineering, Jilin University, Changchun, 130026 (China); He, Xin [Department of Materials Science, State Key Laboratory of Superhard Materials, and Key Laboratory of Automobile Materials, MOE, Jilin University, Changchun, 130012 (China); Wang, Shuo [Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871 (China); Wen, Mao, E-mail: wenmao225@jlu.edu.cn [Department of Materials Science, State Key Laboratory of Superhard Materials, and Key Laboratory of Automobile Materials, MOE, Jilin University, Changchun, 130012 (China); Zheng, Weitao, E-mail: WTZheng@jlu.edu.cn [Department of Materials Science, State Key Laboratory of Superhard Materials, and Key Laboratory of Automobile Materials, MOE, Jilin University, Changchun, 130012 (China)

    2017-06-15

    Highlights: • Intrinsically hydrophilic NbN films can transfer to hydrophobic Nb-Ag-N films by doping Ag atoms into NbN sublattice. • Solute Ag can promote that the hydrophobic Ag{sub 2}O groups formed on the Nb-Ag-N film surface through self-oxidation. • The present work may provide a straightforward approach for the production of robust hydrophobic ceramic surfaces. - Abstract: Robust hydrophobic surfaces based on ceramics capable of withstanding harsh conditions such as abrasion, erosion and high temperature, are required in a broad range of applications. The metal cations with coordinative saturation or low electronegativity are commonly chosen to achieve the intrinsically hydrophobic ceramic by reducing Lewis acidity, and thus the ceramic systems are limited. In this work, we present a different picture that robust hydrophobic surface with high hardness (≥20 GPa) can be fabricated through doping Ag atoms into intrinsically hydrophilic ceramic film NbN by reactive co-sputtering. The transition of wettability from hydrophilic to hydrophobic of Nb-Ag-N films induced by Ag doping results from the appearance of Ag{sub 2}O groups on the films surfaces through self-oxidation, because Ag cations (Ag{sup +}) in Ag{sub 2}O are the filled-shell (4d{sup 10}5S{sup 0}) electronic structure with coordinative saturation that have no tendency to interact with water. The results show that surface Ag{sub 2}O benefited for hydrophobicity comes from the solute Ag atoms rather than precipitate metal Ag, in which the more Ag atoms incorporated into Nb-sublattice are able to further improve the hydrophobicity, whereas the precipitation of Ag nanoclusters would worsen it. The present work opens a window for fabricating robust hydrophobic surface through tailoring surface chemical bond states by doping Ag into transition metal nitrides.

  6. Variations in the NBN/NBS1 gene and the risk of breast cancer in non-BRCA1/2 French Canadian families with high risk of breast cancer

    International Nuclear Information System (INIS)

    Desjardins, Sylvie; Beauparlant, Joly Charles; Labrie, Yvan; Ouellette, Geneviève; INHERIT BRCAs; Durocher, Francine

    2009-01-01

    The Nijmegen Breakage Syndrome is a chromosomal instability disorder characterized by microcephaly, growth retardation, immunodeficiency, and increased frequency of cancers. Familial studies on relatives of these patients indicated that they also appear to be at increased risk of cancer. In a candidate gene study aiming at identifying genetic determinants of breast cancer susceptibility, we undertook the full sequencing of the NBN gene in our cohort of 97 high-risk non-BRCA1 and -BRCA2 breast cancer families, along with 74 healthy unrelated controls, also from the French Canadian population. In silico programs (ESEfinder, NNSplice, Splice Site Finder and MatInspector) were used to assess the putative impact of the variants identified. The effect of the promoter variant was further studied by luciferase gene reporter assay in MCF-7, HEK293, HeLa and LNCaP cell lines. Twenty-four variants were identified in our case series and their frequency was further evaluated in healthy controls. The potentially deleterious p.Ile171Val variant was observed in one case only. The p.Arg215Trp variant, suggested to impair NBN binding to histone γ-H2AX, was observed in one breast cancer case and one healthy control. A promoter variant c.-242-110delAGTA displayed a significant variation in frequency between both sample sets. Luciferase reporter gene assay of the promoter construct bearing this variant did not suggest a variation of expression in the MCF-7 breast cancer cell line, but indicated a reduction of luciferase expression in both the HEK293 and LNCaP cell lines. Our analysis of NBN sequence variations indicated that potential NBN alterations are present, albeit at a low frequency, in our cohort of high-risk breast cancer cases. Further analyses will be needed to fully ascertain the exact impact of those variants on breast cancer susceptibility, in particular for variants located in NBN promoter region

  7. From nanodiamond to nanowires.

    Energy Technology Data Exchange (ETDEWEB)

    Barnard, A.; Materials Science Division

    2005-01-01

    Recent advances in the fabrication and characterization of semiconductor and metallic nanowires are proving very successful in meeting the high expectations of nanotechnologists. Although the nanoscience surrounding sp{sup 3} bonded carbon nanotubes has continued to flourish over recent years the successful synthesis of the sp{sup 3} analogue, diamond nanowires, has been limited. This prompts questions as to whether diamond nanowires are fundamentally unstable. By applying knowledge obtained from examining the structural transformations in nanodiamond, a framework for analyzing the structure and stability of diamond nanowires may be established. One possible framework will be discussed here, supported by results of ab initio density functional theory calculations used to study the structural relaxation of nanodiamond and diamond nanowires. The results show that the structural stability and electronic properties of diamond nanowires are dependent on the surface morphology, crystallographic direction of the principal axis, and the degree of surface hydrogenation.

  8. Ambient template synthesis of multiferroic MnWO4 nanowires and nanowire arrays

    International Nuclear Information System (INIS)

    Zhou Hongjun; Yiu Yuen; Aronson, M.C.; Wong, Stanislaus S.

    2008-01-01

    The current report describes the systematic synthesis of polycrystalline, multiferroic MnWO 4 nanowires and nanowire arrays with controllable chemical composition and morphology, using a modified template-directed methodology under ambient room-temperature conditions. We were able to synthesize nanowires measuring 55±10, 100±20, and 260±40 nm in diameter, respectively, with lengths ranging in the microns. Extensive characterization of as-prepared samples has been performed using X-ray diffraction, scanning electron microscopy, transmission electron microscopy (TEM), high-resolution TEM, and energy-dispersive X-ray spectroscopy. Magnetic behavior in these systems was also probed. - Graphical abstract: Systematic synthesis of crystalline, multiferroic MnWO4 nanowires and nanowire arrays with controllable chemical composition and morphology, using a modified template-directed methodology under ambient room-temperature conditions

  9. Porous Silicon Nanowires

    Science.gov (United States)

    Qu, Yongquan; Zhou, Hailong; Duan, Xiangfeng

    2011-01-01

    In this minreview, we summarize recent progress in the synthesis, properties and applications of a new type of one-dimensional nanostructures — single crystalline porous silicon nanowires. The growth of porous silicon nanowires starting from both p- and n-type Si wafers with a variety of dopant concentrations can be achieved through either one-step or two-step reactions. The mechanistic studies indicate the dopant concentration of Si wafers, oxidizer concentration, etching time and temperature can affect the morphology of the as-etched silicon nanowires. The porous silicon nanowires are both optically and electronically active and have been explored for potential applications in diverse areas including photocatalysis, lithium ion battery, gas sensor and drug delivery. PMID:21869999

  10. Plasma-assisted MOCVD growth of superconducting NbN thin films using Nb dialkylamide and Nb alkylimide precursors

    International Nuclear Information System (INIS)

    Liu Xiang; Ott, A.W.; Chang, R.P.H.; Babcok, J.R.; Belot, J.A.; Metz, M.V.; Marks, T.J.; Lane, M.A.; Kannewurf, C.R.

    2001-01-01

    The first example of the use of metal-organic precursors for depositing NbN superconducting thin films is described. The study, which employed niobium(IV) and niobium(V) pulsed source precursors and hydrazine plasma as the nitrogen source, indicates that T c is highly dependent on the lattice parameters and level of oxygen impurities, which are in turn governed by growth and post-deposition annealing temperatures. (orig.)

  11. Understanding InP Nanowire Array Solar Cell Performance by Nanoprobe-Enabled Single Nanowire Measurements.

    Science.gov (United States)

    Otnes, Gaute; Barrigón, Enrique; Sundvall, Christian; Svensson, K Erik; Heurlin, Magnus; Siefer, Gerald; Samuelson, Lars; Åberg, Ingvar; Borgström, Magnus T

    2018-05-09

    III-V solar cells in the nanowire geometry might hold significant synthesis-cost and device-design advantages as compared to thin films and have shown impressive performance improvements in recent years. To continue this development there is a need for characterization techniques giving quick and reliable feedback for growth development. Further, characterization techniques which can improve understanding of the link between nanowire growth conditions, subsequent processing, and solar cell performance are desired. Here, we present the use of a nanoprobe system inside a scanning electron microscope to efficiently contact single nanowires and characterize them in terms of key parameters for solar cell performance. Specifically, we study single as-grown InP nanowires and use electron beam induced current characterization to understand the charge carrier collection properties, and dark current-voltage characteristics to understand the diode recombination characteristics. By correlating the single nanowire measurements to performance of fully processed nanowire array solar cells, we identify how the performance limiting parameters are related to growth and/or processing conditions. We use this understanding to achieve a more than 7-fold improvement in efficiency of our InP nanowire solar cells, grown from a different seed particle pattern than previously reported from our group. The best cell shows a certified efficiency of 15.0%; the highest reported value for a bottom-up synthesized InP nanowire solar cell. We believe the presented approach have significant potential to speed-up the development of nanowire solar cells, as well as other nanowire-based electronic/optoelectronic devices.

  12. Hydrodynamics and sediment transport in a meandering channel with a model axial-flow hydrokinetic turbine

    Science.gov (United States)

    Hill, Craig; Kozarek, Jessica; Sotiropoulos, Fotis; Guala, Michele

    2016-02-01

    An investigation into the interactions between a model axial-flow hydrokinetic turbine (rotor diameter, dT = 0.15 m) and the complex hydrodynamics and sediment transport processes within a meandering channel was carried out in the Outdoor StreamLab research facility at the University of Minnesota St. Anthony Falls Laboratory. This field-scale meandering stream with bulk flow and sediment discharge control provided a location for high spatiotemporally resolved measurements of bed and water surface elevations around the model turbine. The device was installed within an asymmetric, erodible channel cross section under migrating bed form and fixed outer bank conditions. A comparative analysis between velocity and topographic measurements, with and without the turbine installed, highlights the local and nonlocal features of the turbine-induced scour and deposition patterns. In particular, it shows how the cross-section geometry changes, how the bed form characteristics are altered, and how the mean flow field is distorted both upstream and downstream of the turbine. We further compare and discuss how current energy conversion deployments in meander regions would result in different interactions between the turbine operation and the local and nonlocal bathymetry compared to straight channels.

  13. Quantum optics with nanowires (Conference Presentation)

    Science.gov (United States)

    Zwiller, Val

    2017-02-01

    Nanowires offer new opportunities for nanoscale quantum optics; the quantum dot geometry in semiconducting nanowires as well as the material composition and environment can be engineered with unprecedented freedom to improve the light extraction efficiency. Quantum dots in nanowires are shown to be efficient single photon sources, in addition because of the very small fine structure splitting, we demonstrate the generation of entangled pairs of photons from a nanowire. By doping a nanowire and making ohmic contacts on both sides, a nanowire light emitting diode can be obtained with a single quantum dot as the active region. Under forward bias, this will act as an electrically pumped source of single photons. Under reverse bias, an avalanche effect can multiply photocurrent and enables the detection of single photons. Another type of nanowire under study in our group is superconducting nanowires for single photon detection, reaching efficiencies, time resolution and dark counts beyond currently available detectors. We will discuss our first attempts at combining semiconducting nanowire based single photon emitters and superconducting nanowire single photon detectors on a chip to realize integrated quantum circuits.

  14. Bank retreat study of a meandering river reach case study : River Irwell

    NARCIS (Netherlands)

    Duran, R.; Beevers, L.; Crosato, A.; Wright, N.

    2010-01-01

    Lack of data is often considered a limitation when undertaking morphological studies. This research deals with morphological studies of small rivers experiencing bank erosion processes when only limited data are available. A reach of the meandering gravel-bed river Irwell (United Kingdom) is taken

  15. Quantitative Analysis of Homogeneous Electrocatalytic Reactions at IDA Electrodes: The Example of [Ni(PPh2NBn2)2]2+

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Fei; Parkinson, B. A.; Divan, Ralu; Roberts, John; Liang, Yanping

    2016-12-01

    Interdigitated array (IDA) electrodes have been applied to study the EC’ (electron transfer reaction followed by a catalytic reaction) reactions and a new method of quantitative analysis of IDA results was developed. In this new method, currents on IDA generator and collector electrodes for an EC’ mechanism are derived from the number of redox cycles and the contribution of non-catalytic current. And the fractions of bipotential recycling species and catalytic-active species are calculated, which helps understanding the catalytic reaction mechanism. The homogeneous hydrogen evolution reaction catalyzed by [Ni(PPh2NBn2)2]2+ (where PPh2NBn2 is 1,5-dibenzyl-3,7-diphenyl-1,5-diaza-3,7-diphosphacyclooctane) electrocatalyst was examined and analyzed with IDA electrodes. Besides, the existence of reaction intermediates in the catalytic cycle is inferred from the electrochemical behavior of a glassy carbon disk electrodes and carbon IDA electrodes. This quantitative analysis of IDA electrode cyclic voltammetry currents can be used as a simple and straightforward method for determining reaction mechanism in other catalytic systems as well.

  16. Plasmonic engineering of metal-oxide nanowire heterojunctions in integrated nanowire rectification units

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Luchan; Zhou, Y. Norman, E-mail: liulei@tsinghua.edu.cn, E-mail: nzhou@uwaterloo.ca [Department of Mechanical Engineering, State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Centre for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario N2L 3G1 (Canada); Zou, Guisheng; Liu, Lei, E-mail: liulei@tsinghua.edu.cn, E-mail: nzhou@uwaterloo.ca [Department of Mechanical Engineering, State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Duley, Walt W. [Centre for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario N2L 3G1 (Canada); Department of Physics and Astronomy, University of Waterloo, Waterloo, Ontario N2L 3G1 (Canada)

    2016-05-16

    We show that irradiation with femtosecond laser pulses can produce robust nanowire heterojunctions in coupled non-wetting metal-oxide Ag-TiO{sub 2} structures. Simulations indicate that joining arises from the effect of strong plasmonic localization in the region of the junction. Strong electric field effects occur in both Ag and TiO{sub 2} resulting in the modification of both surfaces and an increase in wettability of TiO{sub 2}, facilitating the interconnection of Ag and TiO{sub 2} nanowires. Irradiation leads to the creation of a thin layer of highly defected TiO{sub 2} in the contact region between the Ag and TiO{sub 2} nanowires. The presence of this layer allows the formation of a heterojunction and offers the possibility of engineering the electronic characteristics of interfacial structures. Rectifying junctions with single and bipolar properties have been generated in Ag-TiO{sub 2} nanowire circuits incorporating asymmetrical and symmetrical interfacial structures, respectively. This fabrication technique should be applicable for the interconnection of other heterogeneous metal-oxide nanowire components and demonstrates that femtosecond laser irradiation enables interfacial engineering for electronic applications of integrated nanowire structures.

  17. Plasmonic engineering of metal-oxide nanowire heterojunctions in integrated nanowire rectification units

    Science.gov (United States)

    Lin, Luchan; Zou, Guisheng; Liu, Lei; Duley, Walt W.; Zhou, Y. Norman

    2016-05-01

    We show that irradiation with femtosecond laser pulses can produce robust nanowire heterojunctions in coupled non-wetting metal-oxide Ag-TiO2 structures. Simulations indicate that joining arises from the effect of strong plasmonic localization in the region of the junction. Strong electric field effects occur in both Ag and TiO2 resulting in the modification of both surfaces and an increase in wettability of TiO2, facilitating the interconnection of Ag and TiO2 nanowires. Irradiation leads to the creation of a thin layer of highly defected TiO2 in the contact region between the Ag and TiO2 nanowires. The presence of this layer allows the formation of a heterojunction and offers the possibility of engineering the electronic characteristics of interfacial structures. Rectifying junctions with single and bipolar properties have been generated in Ag-TiO2 nanowire circuits incorporating asymmetrical and symmetrical interfacial structures, respectively. This fabrication technique should be applicable for the interconnection of other heterogeneous metal-oxide nanowire components and demonstrates that femtosecond laser irradiation enables interfacial engineering for electronic applications of integrated nanowire structures.

  18. Gain Enhancement of Low-Profile, Electrically Small Capacitive Feed Antennas Using Stacked Meander Lines

    Directory of Open Access Journals (Sweden)

    Kazuki Ide

    2010-01-01

    Full Text Available The present paper describes the gain enhancement of a small and low-profile linear antenna with capacitive feed (C-feed using three metallic layers. The antenna has very small leakage current on the outer conductor of the coaxial cable and can easily control the imaginary part of the input impedance. The gain of the stacked three-layer meander line antenna, with the meander line in the middle layer being opposite to that of the other two layers, has increased by around 7 dB compared to the single layered C-feed antenna. The antenna gain is discussed based on simulated and measured results, which demonstrates that the antenna has successfully achieved the acceptable impedance and sufficient gain for mobile terminals and RFID tags.

  19. A New Stochastic Modeling of 3-D Mud Drapes Inside Point Bar Sands in Meandering River Deposits

    Energy Technology Data Exchange (ETDEWEB)

    Yin, Yanshu, E-mail: yys6587@126.com [Yangtze University, School of Geosciences (China)

    2013-12-15

    The environment of major sediments of eastern China oilfields is a meandering river where mud drapes inside point bar sand occur and are recognized as important factors for underground fluid flow and distribution of the remaining oil. The present detailed architectural analysis, and the related mud drapes' modeling inside a point bar, is practical work to enhance oil recovery. This paper illustrates a new stochastic modeling of mud drapes inside point bars. The method is a hierarchical strategy and composed of three nested steps. Firstly, the model of meandering channel bodies is established using the Fluvsim method. Each channel centerline obtained from the Fluvsim is preserved for the next simulation. Secondly, the curvature ratios of each meandering river at various positions are calculated to determine the occurrence of each point bar. The abandoned channel is used to characterize the geometry of each defined point bar. Finally, mud drapes inside each point bar are predicted through random sampling of various parameters, such as number, horizontal intervals, dip angle, and extended distance of mud drapes. A dataset, collected from a reservoir in the Shengli oilfield of China, was used to illustrate the mud drapes' building procedure proposed in this paper. The results show that the inner architectural elements of the meandering river are depicted fairly well in the model. More importantly, the high prediction precision from the cross validation of five drilled wells shows the practical value and significance of the proposed method.

  20. A silicon nanowire heater and thermometer

    Science.gov (United States)

    Zhao, Xingyan; Dan, Yaping

    2017-07-01

    In the thermal conductivity measurements of thermoelectric materials, heaters and thermometers made of the same semiconducting materials under test, forming a homogeneous system, will significantly simplify fabrication and integration. In this work, we demonstrate a high-performance heater and thermometer made of single silicon nanowires (SiNWs). The SiNWs are patterned out of a silicon-on-insulator wafer by CMOS-compatible fabrication processes. The electronic properties of the nanowires are characterized by four-probe and low temperature Hall effect measurements. The I-V curves of the nanowires are linear at small voltage bias. The temperature dependence of the nanowire resistance allows the nanowire to be used as a highly sensitive thermometer. At high voltage bias, the I-V curves of the nanowire become nonlinear due to the effect of Joule heating. The temperature of the nanowire heater can be accurately monitored by the nanowire itself as a thermometer.

  1. Study of GaN nanowires converted from β-Ga2O3 and photoconduction in a single nanowire

    Science.gov (United States)

    Kumar, Mukesh; Kumar, Sudheer; Chauhan, Neha; Sakthi Kumar, D.; Kumar, Vikram; Singh, R.

    2017-08-01

    The formation of GaN nanowires from β-Ga2O3 nanowires and photoconduction in a fabricated single GaN nanowire device has been studied. Wurtzite phase GaN were formed from monoclinic β-Ga2O3 nanowires with or without catalyst particles at their tips. The formation of faceted nanostructures from catalyst droplets presented on a nanowire tip has been discussed. The nucleation of GaN phases in β-Ga2O3 nanowires and their subsequent growth due to interfacial strain energy has been examined using a high resolution transmission electron microscope. The high quality of the converted GaN nanowire is confirmed by fabricating single nanowire photoconducting devices which showed ultra high responsivity under ultra-violet illumination.

  2. Optical haze of randomly arranged silver nanowire transparent conductive films with wide range of nanowire diameters

    Directory of Open Access Journals (Sweden)

    M. Marus

    2018-03-01

    Full Text Available The effect of the diameter of randomly arranged silver nanowires on the optical haze of silver nanowire transparent conductive films was studied. Proposed simulation model behaved similarly with the experimental results, and was used to theoretically study the optical haze of silver nanowires with diameters in the broad range from 30 nm and above. Our results show that a thickening of silver nanowires from 30 to 100 nm results in the increase of the optical haze up to 8 times, while from 100 to 500 nm the optical haze increases only up to 1.38. Moreover, silver nanowires with diameter of 500 nm possess up to 5% lower optical haze and 5% higher transmittance than 100 nm thick silver nanowires for the same 10-100 Ohm/sq sheet resistance range. Further thickening of AgNWs can match the low haze of 30 nm thick AgNWs, but at higher transmittance. The results obtained from this work allow deeper analysis of the silver nanowire transparent conductive films from the perspective of the diameter of nanowires for various optoelectronic devices.

  3. Vertical nanowire architectures

    DEFF Research Database (Denmark)

    Vlad, A.; Mátéfl-Tempfli, M.; Piraux, L.

    2010-01-01

    Nanowires and statistics: A statistical process for reading ultradense arrays of nanostructured materials is presented (see image). The experimental realization is achieved through selective nanowire growth using porous alumina templates. The statistical patterning approach is found to provide ri...

  4. Diameter-dependent coloration of silver nanowires

    International Nuclear Information System (INIS)

    Stewart, Mindy S; Qiu Chao; Jiang Chaoyang; Kattumenu, Ramesh; Singamaneni, Srikanth

    2011-01-01

    Silver nanowires were synthesized with a green method and characterized with microscopic and diffractometric methods. The correlation between the colors of the nanowires deposited on a solid substrate and their diameters was explored. Silver nanowires that appear similar in color in the optical micrographs have very similar diameters as determined by atomic force microscopy. We have summarized the diameter-dependent coloration for these silver nanowires. An optical interference model was applied to explain such correlation. In addition, microreflectance spectra were obtained from individual nanowires and the observed spectra can be explained with the optical interference theory. This work provides a cheap, quick and simple screening method for studying the diameter distribution of silver nanowires, as well as the diameter variations of individual silver nanowires, without complicated sample preparation.

  5. Fronts, meanders and eddies in Drake Passage during the ANT-XXIII/3 cruise in January-February 2006: A satellite perspective

    Science.gov (United States)

    Barré, Nicolas; Provost, Christine; Renault, Alice; Sennéchael, Nathalie

    2011-12-01

    We used satellite altimetric data to provide a context for the results of the ANT-XXIII/3 cruise in January-February 2006 both in time (16 years) and space (the whole of Drake Passage). The repeat of the hydrographical section within 3 weeks permitted different comparisons between the in-situ datasets and the satellite data products. Comparisons suggested that the multi-satellite product improved the temporal resolution on a Jason-1 track. A detailed analysis of the four absolute dynamic topography maps contemporaneous with the ANT-XXIII/3 cruise permitted identification of the location of the frontal branches of the Antarctic Circumpolar Current, of the major meanders and eddies. This spatial context proved particularly valuable for the interpretation of the in-situ data (see companion papers of Provost et al., 2011; Renault et al., 2011; Sudre et al., 2011). The altimetric time-series documented the long-term trends in sea-surface height, the recurrence of major frontal meanders and eddies and the statistical links between them. Negative trends in the Yaghan Basin indicated that both the Subantarctic Front and the Polar Front have shifted to the north of their climatological location. This northward shift in the Yaghan Basin contrasts with the large-scale southward shift in the Polar Front current core described in the literature, and is probably related to the local bottom topography in Drake Passage. Sea-level anomaly patterns observed during the cruise were related to statistical modes of the corresponding variations in Drake Passage. For example, the southward meander of the Subantarctic Front at the entrance to Drake Passage was part of a dipole comprising an adjacent Polar Front meander and occurred with a close to annual periodicity. A census of eddies in the Ona Basin revealed that the spatial distribution of anticyclonic eddies was consistent with generation from a meander of the Polar and Southern ACC Fronts over the Ona Seafloor Depression, while

  6. Methods for synthesizing metal oxide nanowires

    Science.gov (United States)

    Sunkara, Mahendra Kumar; Kumar, Vivekanand; Kim, Jeong H.; Clark, Ezra Lee

    2016-08-09

    A method of synthesizing a metal oxide nanowire includes the steps of: combining an amount of a transition metal or a transition metal oxide with an amount of an alkali metal compound to produce a mixture; activating a plasma discharge reactor to create a plasma discharge; exposing the mixture to the plasma discharge for a first predetermined time period such that transition metal oxide nanowires are formed; contacting the transition metal oxide nanowires with an acid solution such that an alkali metal ion is exchanged for a hydrogen ion on each of the transition metal oxide nanowires; and exposing the transition metal oxide nanowires to the plasma discharge for a second predetermined time period to thermally anneal the transition metal oxide nanowires. Transition metal oxide nanowires produced using the synthesis methods described herein are also provided.

  7. Electron Transport Properties of Ge nanowires

    Science.gov (United States)

    Hanrath, Tobias; Khondaker, Saiful I.; Yao, Zhen; Korgel, Brian A.

    2003-03-01

    Electron Transport Properties of Ge nanowires Tobias Hanrath*, Saiful I. Khondaker, Zhen Yao, Brian A. Korgel* *Dept. of Chemical Engineering, Dept. of Physics, Texas Materials Institute, and Center for Nano- and Molecular Science and Technology University of Texas at Austin, Austin, Texas 78712-1062 e-mail: korgel@mail.che.utexas.edu Germanium (Ge) nanowires with diameters ranging from 6 to 50 nm and several micrometer in length were grown via a supercritical fluid-liquid-solid synthesis. Parallel electron energy loss spectroscopy (PEELS) was employed to study the band structure and electron density in the Ge nanowires. The observed increase in plasmon peak energy and peak width with decreasing nanowire diameter is attributed to quantum confinement effects. For electrical characterization, Ge nanowires were deposited onto a patterned Si/SiO2 substrate. E-beam lithography was then used to form electrode contacts to individual nanowires. The influence of nanowire diameter, surface chemistry and crystallographic defects on electron transport properties were investigated and the comparison of Ge nanowire conductivity with respect to bulk, intrinsic Ge will be presented.

  8. EDITORIAL: Nanowires for energy Nanowires for energy

    Science.gov (United States)

    LaPierre, Ray; Sunkara, Mahendra

    2012-05-01

    This special issue of Nanotechnology focuses on studies illustrating the application of nanowires for energy including solar cells, efficient lighting and water splitting. Over the next three decades, nanotechnology will make significant contributions towards meeting the increased energy needs of the planet, now known as the TeraWatt challenge. Nanowires in particular are poised to contribute significantly in this development as presented in the review by Hiralal et al [1]. Nanowires exhibit light trapping properties that can act as a broadband anti-reflection coating to enhance the efficiency of solar cells. In this issue, Li et al [2] and Wang et al [3] present the optical properties of silicon nanowire and nanocone arrays. In addition to enhanced optical properties, core-shell nanowires also have the potential for efficient charge carrier collection across the nanowire diameter as presented in the contribution by Yu et al [4] for radial junction a-Si solar cells. Hybrid approaches that combine organic and inorganic materials also have potential for high efficiency photovoltaics. A Si-based hybrid solar cell is presented by Zhang et al [5] with a photoconversion efficiency of over 7%. The quintessential example of hybrid solar cells is the dye-sensitized solar cell (DSSC) where an organic absorber (dye) coats an inorganic material (typically a ZnO nanostructure). Herman et al [6] present a method of enhancing the efficiency of a DSSC by increasing the hetero-interfacial area with a unique hierarchical weeping willow ZnO structure. The increased surface area allows for higher dye loading, light harvesting, and reduced charge recombination through direct conduction along the ZnO branches. Another unique ZnO growth method is presented by Calestani et al [7] using a solution-free and catalyst-free approach by pulsed electron deposition (PED). Nanowires can also make more efficient use of electrical power. Light emitting diodes, for example, will eventually become the

  9. Bar and channel evolution in meandering and braiding rivers using physics-based modeling

    NARCIS (Netherlands)

    Schuurman, F.

    2015-01-01

    Rivers are among the most dynamic earth surface systems. Some rivers meander, forming bends that migrate, reshape and have inner-bend bars. Other rivers form a complicated braided pattern of branches, islands and mid-channel bars. Thorough understanding of their morphodynamics is important for

  10. Electrically Injected UV-Visible Nanowire Lasers

    Energy Technology Data Exchange (ETDEWEB)

    Wang, George T.; Li, Changyi; Li, Qiming; Liu, Sheng; Wright, Jeremy Benjamin; Brener, Igal; Luk, Ting -Shan; Chow, Weng W.; Leung, Benjamin; Figiel, Jeffrey J.; Koleske, Daniel D.; Lu, Tzu-Ming

    2015-09-01

    There is strong interest in minimizing the volume of lasers to enable ultracompact, low-power, coherent light sources. Nanowires represent an ideal candidate for such nanolasers as stand-alone optical cavities and gain media, and optically pumped nanowire lasing has been demonstrated in several semiconductor systems. Electrically injected nanowire lasers are needed to realize actual working devices but have been elusive due to limitations of current methods to address the requirement for nanowire device heterostructures with high material quality, controlled doping and geometry, low optical loss, and efficient carrier injection. In this project we proposed to demonstrate electrically injected single nanowire lasers emitting in the important UV to visible wavelengths. Our approach to simultaneously address these challenges is based on high quality III-nitride nanowire device heterostructures with precisely controlled geometries and strong gain and mode confinement to minimize lasing thresholds, enabled by a unique top-down nanowire fabrication technique.

  11. Nanowire-decorated microscale metallic electrodes

    DEFF Research Database (Denmark)

    Vlad, A.; Mátéfi-Tempfli, M.; Antohe, V.A.

    2008-01-01

    The fabrication of metallic nanowire patterns within anodic alumina oxide (AAO) membranes on top of continuous conducting substrates are discussed. The fabrication protocol is based on the realization of nanowire patterns using supported nanoporous alumina templates (SNAT) prepared on top...... of lithographically defined metallic microelectrodes. The anodization of the aluminum permits electroplating only on top of the metallic electrodes, leading to the nanowire patterns having the same shape as the underlying metallic tracks. The variation in the fabricated structures between the patterned and non......-patterned substrates can be interpreted in terms of different behavior during anodization. The improved quality of fabricated nanowire patterns is clearly demonstrated by the SEM imaging and the uniform growth of nanowires inside the alumina template is observed without any significant height variation....

  12. NbN A/D Conversion of IR Focal Plane Sensor Signal at 10 K

    Science.gov (United States)

    Eaton, L.; Durand, D.; Sandell, R.; Spargo, J.; Krabach, T.

    1994-01-01

    We are implementing a 12 bit SFQ counting ADC with parallel-to-serial readout using our established 10 K NbN capability. This circuit provides a key element of the analog signal processor (ASP) used in large infrared focal plane arrays. The circuit processes the signal data stream from a Si:As BIB detector array. A 10 mega samples per second (MSPS) pixel data stream flows from the chip at a 120 megabit bit rate in a format that is compatible with other superconductive time dependent processor (TDP) circuits being developed. We will discuss our planned ASP demonstration, the circuit design, and test results.

  13. Designing and building nanowires: directed nanocrystal self-assembly into radically branched and zigzag PbS nanowires

    International Nuclear Information System (INIS)

    Xu Fan; Ma Xin; Gerlein, L Felipe; Cloutier, Sylvain G

    2011-01-01

    Lead sulfide nanowires with controllable optoelectronic properties would be promising building blocks for various applications. Here, we report the hot colloidal synthesis of radically branched and zigzag nanowires through self-attachment of star-shaped and octahedral nanocrystals in the presence of multiple surfactants. We obtained high-quality single-crystal nanowires with uniform diameter along the entire length, and the size of the nanowire can be tuned by tailoring the reaction parameters. This slow oriented attachment provides a better understanding of the intricacies of this complex nanocrystal assembly process. Meanwhile, these self-assembled nanowire structures have appealing lateral conformations with narrow side arms or highly faceted edges, where strong quantum confinement can occur. Consequently, the single-crystal nanowire structures exhibit strong photoluminescence in the near-infrared region with a large blue-shift compared to the bulk material.

  14. Platinum boride nanowires: Synthesis and characterization

    International Nuclear Information System (INIS)

    Ding Zhanhui; Qiu Lixia; Zhang Jian; Yao Bin; Cui Tian; Guan Weiming; Zheng Weitao; Wang Wenquan; Zhao Xudong; Liu Xiaoyang

    2012-01-01

    Highlights: ► Platinum boride nanowires have been synthesized via the direct current arc discharge method. ► XRD, TEM and SAED indicate that the nanowires are single-crystal PtB. ► Two broad photoluminescence emission peaks at about 586 nm and 626 nm have been observed in the PL spectroscopy of PtB nanowires. - Abstract: Platinum boride (PtB) nanowires have been successfully fabricated with direct current arc discharge method using a milled mixture of platinum (Pt) and boron nitride (BN) powders. X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to characterize the compositions, morphology, and structures of the samples. The results show that PtB nanowires are 30–50 nm thick and 20–30 μm long. TEM and selected area electron diffraction (SAED) patterns identify that the PtB nanowires are single-crystalline in nature. A growth mechanism based on vapor–liquid–solid (VLS) process is proposed for the formation of nanowires.

  15. Semiconductor nanowires and templates for electronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Ying, Xiang

    2009-07-15

    This thesis starts by developing a platform for the organized growth of nanowires directly on a planar substrate. For this, a method to fabricate horizontal porous alumina membranes is studied. The second part of the thesis focuses on the study of nanowires. It starts by the understanding of the growth mechanisms of germanium nanowires and follows by the structural and electrical properties at the single nanowire level. Horizontally aligned porous anodic alumina (PAA) was used as a template for the nanowire synthesis. Three PAA arrangements were studied: - high density membranes - micron-sized fingers - multi-contacts Membranes formed by a high density of nanopores were obtained by anodizing aluminum thin films. Metallic and semiconducting nanowires were synthesized into the PAA structures via DC deposition, pulsed electro-depostion and CVD growth. The presence of gold, copper, indium, nickel, tellurium, and silicon nanowires inside PAA templates was verified by SEM and EDX analysis. Further, room-temperature transport measurements showed that the pores are completely filled till the bottom of the pores. In this dissertation, single crystalline and core-shell germanium nanowires are synthesized using indium and bismuth as catalyst in a chemical vapor deposition procedure with germane (GeH{sub 4}) as growth precursor. A systematic growth study has been performed to obtain high aspect-ratio germanium nanowires. The influence of the growth conditions on the final morphology and the crystalline structure has been determined via scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). In the case of indium catalyzed germanium nanowires, two different structures were identified: single crystalline and crystalline core-amorphous shell. The preferential growth axis of both kinds of nanowires is along the [110] direction. The occurrence of the two morphologies was found to only depend on the nanowire dimension. In the case of bismuth

  16. PREFACE: Synthesis and integration of nanowires

    Science.gov (United States)

    Samuelson, L.

    2006-06-01

    The field of semiconductor nanowires has attracted much attention in recent years, from the areas of basic materials science, advanced characterization and technology, as well as from the perspective of the applications of nanowires. Research on large-sized whiskers and wires had already begun in the 1960s with the pioneering work of Wagner, as well as by other researchers. It was, however, in the early 1990s that Kenji Hiruma at Hitachi Central Research Laboratories in Japan first succeeded in developing methods for the growth of nanowires with dimensions on the scale of 10-100 nm, thereby initiating the field of growth and applications of nanowires, with a strong emphasis on epitaxial nucleation of nanowires on a single-crystalline substrate. Starting from the mid-1990s, the field developed very rapidly with the number of papers on the subject growing from ten per year to several thousand papers on the subject published annually today, although with a rather generous definition of the concept of nanowires. With this rapid development we have seen many new and different approaches to the growth of nanowires, technological advances leading to a more well-controlled formation of nanowires, new innovative methods for the characterization of structures, as well as a wealth of approaches towards the use of nanowires in electronics, photonics and sensor applications. This issue contains contributions from many different laboratories, each adding significant detail to the development of the field of research. The contributions cover issues such as basic growth, advanced characterization and technology, and application of nanowires. I would like to acknowledge the shared responsibilities for this special issue of Nanotechnology on the synthesis and integration of nanowires with my co-Editors, S Tong Lee and M Sunkara, as well as the highly professional support from Dr Nina Couzin, Dr Ian Forbes and the Nanotechnology team from the Institute of Physics Publishing.

  17. Electrospinning synthesis of superconducting BSCCO nanowires

    International Nuclear Information System (INIS)

    Duarte, Edgar A.; Quintero, Pedro A.; Meisel, Mark W.; Nino, Juan C.

    2013-01-01

    Highlights: •Bi 2 Sr 2 CaCu 2 O 8+x nanowires 150 nm to 250 nm thick are synthesized using the electrospinning. •Bi 2 Sr 2 CaCu 2 O 8+x nanowires are obtained after a heat treatment at 850 °C. •Bi 2 Sr 2 CaCu 2 O 8+x nanowires show a T c = 78.7 K consistent with bulk superconductor behavior. -- Abstract: This paper presents the synthesis and characterization of Bi 2 Sr 2 CaCu 2 O 8+x superconducting nanowires. Bi 2 Sr 2 CaCu 2 O 8+x nanowires with a T c = 78.7 K are synthesized using the electrospinning process employing sol–gel precursors. A sol–gel methodology is used to obtain a homogeneous PVP solution containing Bi, Sr, Ca, and Cu acetates. Mats of randomly oriented nanowires and aligned nanowires are also collected. After a heat treatment at 850 °C in ambient atmosphere using heating rates of 100 and 400 °C/h, fully crystallized Bi 2 Sr 2 CaCu 2 O 8+x nanowires are obtained. The morphology, microstructure, and crystal structure of these nanowires are then examined to reveal a rectangular morphology having typical wire thickness in the range of 150–250 nm, and a wire width between 400 and 600 nm. DC magnetization studies are conducted to investigate the critical transition temperature (T c ) of Bi 2 Sr 2 CaCu 2 O 8+x nanowires and to compare their magnetic properties to those of bulk Bi 2 Sr 2 CaCu 2 O 8+x powder. The T c for the commercial powder is observed at 78.6 K, and that of the obtained nanowires at 78.7 K. These results point to the superconducting nature of Bi 2 Sr 2 CaCu 2 O 8+x nanowires, and the potential of the electrospinning process for the synthesis of this superconductor material

  18. Micromagnetic simulations of cylindrical magnetic nanowires

    KAUST Repository

    Ivanov, Yurii P.

    2015-05-27

    This chapter reviews micromagnetic simulations of cylindrical magnetic nanowires and their ordered arrays. It starts with a description of the theoretical background of micromagnetism. The chapter discusses main magnetization reversal modes, domain wall types, and state diagrams in cylindrical nanowires of different types and sizes. The results of the hysteresis process in individual nanowires and nanowire arrays also are presented. Modeling results are compared with experimental ones. The chapter also discusses future trends in nanowire applications in relation to simulations, such as current-driven dynamics, spintronics, and spincaloritronics. The main micromagnetic programs are presented and discussed, together with the corresponding links.

  19. Magnetostatic Interaction in Fe-Co Nanowires

    Directory of Open Access Journals (Sweden)

    Laura Elbaile

    2012-01-01

    Full Text Available Arrays of Fe-Co alloy nanowires with diameter around 35 nm and several micrometers in length have been synthesized by codepositing Fe and Co into porous anodic alumina. The morphology, structure, and magnetic properties of the nanowires (hysteresis loops and remanence curves were characterized by SEM, TEM, X-ray diffraction (XRD, and VSM, respectively. The XRD patterns indicate that the Fe-Co nanowires present a body-centered cubic (bcc structure and a preferred (110 orientation perpendicular to the template surface. From the hysteresis loops obtained with the magnetic field applied in the axis direction of the nanowires, we can observe that the coercive field slightly decreases when the nanowire length increases. This magnetic behaviour is analyzed considering the shape anisotropy and the dipolar interactions among nanowires.

  20. Resistance Fluctuations in GaAs Nanowire Grids

    Directory of Open Access Journals (Sweden)

    Ivan Marasović

    2014-01-01

    Full Text Available We present a numerical study on resistance fluctuations in a series of nanowire-based grids. Each grid is made of GaAs nanowires arranged in parallel with metallic contacts crossing all nanowires perpendicularly. Electrical properties of GaAs nanowires known from previous experimental research are used as input parameters in the simulation procedure. Due to the nonhomogeneous doping, the resistivity changes along nanowire. Allowing two possible nanowire orientations (“upwards” or “downwards”, the resulting grid is partially disordered in vertical direction which causes resistance fluctuations. The system is modeled using a two-dimensional random resistor network. Transfer-matrix computation algorithm is used to calculate the total network resistance. It is found that probability density function (PDF of resistance fluctuations for a series of nanowire grids changes from Gaussian behavior towards the Bramwell-Holdsworth-Pinton distribution when both nanowire orientations are equally represented in the grid.

  1. Silicon nanowire hybrid photovoltaics

    KAUST Repository

    Garnett, Erik C.

    2010-06-01

    Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

  2. Silicon nanowire hybrid photovoltaics

    KAUST Repository

    Garnett, Erik C.; Peters, Craig; Brongersma, Mark; Cui, Yi; McGehee, Mike

    2010-01-01

    Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

  3. A high performance magnetorheological valve with a meandering flow path

    International Nuclear Information System (INIS)

    Imaduddin, Fitrian; Amri Mazlan, Saiful; Azizi Abdul Rahman, Mohd; Zamzuri, Hairi; Ubaidillah; Ichwan, Burhanuddin

    2014-01-01

    The huge developments in the field of magnetorheological (MR) fluid-based devices will have a great influence on the future of mechatronic applications due to the ease of interfacing between electronic controls and the mechanical components that they provide. Among various MR fluid-based devices, an MR valve would be particularly significant for the development of other devices, if it could be successfully achieved. One of the most challenging obstacles to MR valve development is the difficulty of achieving device miniaturization while, at the same time, improving the achievable performance. This study demonstrates a novel design for an MR valve, using the meandering flow path approach in order to increase the effective area so that the MR fluid can be regulated within a small-sized valve. The meandering flow path is formed by combining multiple annular, radial and orifice flow channels. In order to analyze the valve performance, a mathematical model of the proposed MR valve is derived and combined with numerical simulation using the finite element method, with the intention of predicting the achievable pressure drop that can be generated by the valve. The predicted MR valve performances are then experimentally evaluated using an oscillation-disturbed bypass hydraulic cylinder. The simulation results show that the proposed MR valve design could yield substantial pressure drop improvement, which is confirmed by the experiment

  4. Functionalised zinc oxide nanowire gas sensors: Enhanced NO(2) gas sensor response by chemical modification of nanowire surfaces.

    Science.gov (United States)

    Waclawik, Eric R; Chang, Jin; Ponzoni, Andrea; Concina, Isabella; Zappa, Dario; Comini, Elisabetta; Motta, Nunzio; Faglia, Guido; Sberveglieri, Giorgio

    2012-01-01

    Surface coating with an organic self-assembled monolayer (SAM) can enhance surface reactions or the absorption of specific gases and hence improve the response of a metal oxide (MOx) sensor toward particular target gases in the environment. In this study the effect of an adsorbed organic layer on the dynamic response of zinc oxide nanowire gas sensors was investigated. The effect of ZnO surface functionalisation by two different organic molecules, tris(hydroxymethyl)aminomethane (THMA) and dodecanethiol (DT), was studied. The response towards ammonia, nitrous oxide and nitrogen dioxide was investigated for three sensor configurations, namely pure ZnO nanowires, organic-coated ZnO nanowires and ZnO nanowires covered with a sparse layer of organic-coated ZnO nanoparticles. Exposure of the nanowire sensors to the oxidising gas NO(2) produced a significant and reproducible response. ZnO and THMA-coated ZnO nanowire sensors both readily detected NO(2) down to a concentration in the very low ppm range. Notably, the THMA-coated nanowires consistently displayed a small, enhanced response to NO(2) compared to uncoated ZnO nanowire sensors. At the lower concentration levels tested, ZnO nanowire sensors that were coated with THMA-capped ZnO nanoparticles were found to exhibit the greatest enhanced response. ΔR/R was two times greater than that for the as-prepared ZnO nanowire sensors. It is proposed that the ΔR/R enhancement in this case originates from the changes induced in the depletion-layer width of the ZnO nanoparticles that bridge ZnO nanowires resulting from THMA ligand binding to the surface of the particle coating. The heightened response and selectivity to the NO(2) target are positive results arising from the coating of these ZnO nanowire sensors with organic-SAM-functionalised ZnO nanoparticles.

  5. Nanowire sensors and arrays for chemical/biomolecule detection

    Science.gov (United States)

    Yun, Minhee; Lee, Choonsup; Vasquez, Richard P.; Ramanathan, K.; Bangar, M. A.; Chen, W.; Mulchandan, A.; Myung, N. V.

    2005-01-01

    We report electrochemical growth of single nanowire based sensors using e-beam patterned electrolyte channels, potentially enabling the controlled fabrication of individually addressable high density arrays. The electrodeposition technique results in nanowires with controlled dimensions, positions, alignments, and chemical compositions. Using this technique, we have fabricated single palladium nanowires with diameters ranging between 75 nm and 300 nm and conducting polymer nanowires (polypyrrole and polyaniline) with diameters between 100 nm and 200 nm. Using these single nanowires, we have successfully demonstrated gas sensing with Pd nanowires and pH sensing with polypirrole nanowires.

  6. Structural and tunneling properties of Si nanowires

    KAUST Repository

    Montes Muñoz, Enrique

    2013-12-06

    We investigate the electronic structure and electron transport properties of Si nanowires attached to Au electrodes from first principles using density functional theory and the nonequilibrium Green\\'s function method. We systematically study the dependence of the transport properties on the diameter of the nanowires, on the growth direction, and on the length. At the equilibrium Au-nanowire distance we find strong electronic coupling between the electrodes and nanowires, which results in a low contact resistance. With increasing nanowire length we study the transition from metallic to tunneling conductance for small applied bias. For the tunneling regime we investigate the decay of the conductance with the nanowire length and rationalize the results using the complex band structure of the pristine nanowires. The conductance is found to depend strongly on the growth direction, with nanowires grown along the ⟨110⟩ direction showing the smallest decay with length and the largest conductance and current.

  7. Structural and tunneling properties of Si nanowires

    KAUST Repository

    Montes Muñ oz, Enrique; Gkionis, Konstantinos; Rungger, Ivan; Sanvito, Stefano; Schwingenschlö gl, Udo

    2013-01-01

    We investigate the electronic structure and electron transport properties of Si nanowires attached to Au electrodes from first principles using density functional theory and the nonequilibrium Green's function method. We systematically study the dependence of the transport properties on the diameter of the nanowires, on the growth direction, and on the length. At the equilibrium Au-nanowire distance we find strong electronic coupling between the electrodes and nanowires, which results in a low contact resistance. With increasing nanowire length we study the transition from metallic to tunneling conductance for small applied bias. For the tunneling regime we investigate the decay of the conductance with the nanowire length and rationalize the results using the complex band structure of the pristine nanowires. The conductance is found to depend strongly on the growth direction, with nanowires grown along the ⟨110⟩ direction showing the smallest decay with length and the largest conductance and current.

  8. Semiconducting silicon nanowires for biomedical applications

    CERN Document Server

    Coffer, JL

    2014-01-01

    Biomedical applications have benefited greatly from the increasing interest and research into semiconducting silicon nanowires. Semiconducting Silicon Nanowires for Biomedical Applications reviews the fabrication, properties, and applications of this emerging material. The book begins by reviewing the basics, as well as the growth, characterization, biocompatibility, and surface modification, of semiconducting silicon nanowires. It goes on to focus on silicon nanowires for tissue engineering and delivery applications, including cellular binding and internalization, orthopedic tissue scaffol

  9. Comparison of the Dynamic Wake Meandering Model, Large-Eddy Simulation, and Field Data at the Egmond aan Zee Offshore Wind Plant: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Churchfield, M. J.; Moriarty, P. J.; Hao, Y.; Lackner, M. A.; Barthelmie, R.; Lundquist, J.; Oxley, G. S.

    2014-12-01

    The focus of this work is the comparison of the dynamic wake meandering model and large-eddy simulation with field data from the Egmond aan Zee offshore wind plant composed of 36 3-MW turbines. The field data includes meteorological mast measurements, SCADA information from all turbines, and strain-gauge data from two turbines. The dynamic wake meandering model and large-eddy simulation are means of computing unsteady wind plant aerodynamics, including the important unsteady meandering of wakes as they convect downstream and interact with other turbines and wakes. Both of these models are coupled to a turbine model such that power and mechanical loads of each turbine in the wind plant are computed. We are interested in how accurately different types of waking (e.g., direct versus partial waking), can be modeled, and how background turbulence level affects these loads. We show that both the dynamic wake meandering model and large-eddy simulation appear to underpredict power and overpredict fatigue loads because of wake effects, but it is unclear that they are really in error. This discrepancy may be caused by wind-direction uncertainty in the field data, which tends to make wake effects appear less pronounced.

  10. Interactions between semiconductor nanowires and living cells.

    Science.gov (United States)

    Prinz, Christelle N

    2015-06-17

    Semiconductor nanowires are increasingly used for biological applications and their small dimensions make them a promising tool for sensing and manipulating cells with minimal perturbation. In order to interface cells with nanowires in a controlled fashion, it is essential to understand the interactions between nanowires and living cells. The present paper reviews current progress in the understanding of these interactions, with knowledge gathered from studies where living cells were interfaced with vertical nanowire arrays. The effect of nanowires on cells is reported in terms of viability, cell-nanowire interface morphology, cell behavior, changes in gene expression as well as cellular stress markers. Unexplored issues and unanswered questions are discussed.

  11. Electrodeposition of rhenium-tin nanowires

    International Nuclear Information System (INIS)

    Naor-Pomerantz, Adi; Eliaz, Noam; Gileadi, Eliezer

    2011-01-01

    Highlights: → Rhenium-tin nanowires were formed electrochemically, without using a template. → The nanowires consisted of a crystalline-Sn-core/amorphous-Re-shell structure. → The effects of bath composition and operating conditions were investigated. → A mechanism is suggested for the formation of the core/shell structure. → The nanowires may be attractive for a variety of applications. - Abstract: Rhenium (Re) is a refractory metal which exhibits an extraordinary combination of properties. Thus, nanowires and other nanostructures of Re-alloys may possess unique properties resulting from both Re chemistry and the nanometer scale, and become attractive for a variety of applications, such as in catalysis, photovoltaic cells, and microelectronics. Rhenium-tin coatings, consisting of nanowires with a core/shell structure, were electrodeposited on copper substrates under galvanostatic or potentiostatic conditions. The effects of bath composition and operating conditions were investigated, and the chemistry and structure of the coatings were studied by a variety of analytical tools. A Re-content as high as 77 at.% or a Faradaic efficiency as high as 46% were attained. Ranges of Sn-to-Re in the plating bath, applied current density and applied potential, within which the nanowires could be formed, were determined. A mechanism was suggested, according to which Sn nanowires were first grown on top of Sn micro-particles, and then the Sn nanowires reduced the perrhenate chemically, thus forming a core made of crystalline Sn-rich phase, and a shell made of amorphous Re-rich phase. The absence of mutual solubility of Re and Sn may be the driving force for this phase separation.

  12. Gold nanowires and the effect of impurities

    Directory of Open Access Journals (Sweden)

    Novaes Frederico

    2006-01-01

    Full Text Available AbstractMetal nanowires and in particular gold nanowires have received a great deal of attention in the past few years. Experiments on gold nanowires have prompted theory and simulation to help answer questions posed by these studies. Here we present results of computer simulations for the formation, evolution and breaking of very thin Au nanowires. We also discuss the influence of contaminants, such as atoms and small molecules, and their effect on the structural and mechanical properties of these nanowires.

  13. Electric Conductivity of Phosphorus Nanowires

    International Nuclear Information System (INIS)

    Jing-Xiang, Zhang; Hui, Li; Xue-Qing, Zhang; Kim-Meow, Liew

    2009-01-01

    We present the structures and electrical transport properties of nanowires made from different strands of phosphorus chains encapsulated in carbon nanotubes. Optimized by density function theory, our results indicate that the conductance spectra reveal an oscillation dependence on the size of wires. It can be seen from the density of states and current-voltage curves that the structure of nanowires affects their properties greatly. Among them, the DNA-like double-helical phosphorus nanowire exhibits the distinct characteristic of an approximately linear I – V relationship and has a higher conductance than others. The transport properties of phosphorus nanowires are highly correlated with their microstructures. (condensed matter: structure, mechanical and thermal properties)

  14. Failure mechanisms and electromechanical coupling in semiconducting nanowires

    Directory of Open Access Journals (Sweden)

    Peng B.

    2010-06-01

    Full Text Available One dimensional nanostructures, like nanowires and nanotubes, are increasingly being researched for the development of next generation devices like logic gates, transistors, and solar cells. In particular, semiconducting nanowires with a nonsymmetric wurtzitic crystal structure, such as zinc oxide (ZnO and gallium nitride (GaN, have drawn immense research interests due to their electromechanical coupling. The designing of the future nanowire-based devices requires component-level characterization of individual nanowires. In this paper, we present a unique experimental set-up to characterize the mechanical and electromechanical behaviour of individual nanowires. Using this set-up and complementary atomistic simulations, mechanical properties of ZnO nanowires and electromechanical properties of GaN nanowires were investigated. In ZnO nanowires, elastic modulus was found to depend on nanowire diameter decreasing from 190 GPa to 140 GPa as the wire diameter increased from 5 nm to 80 nm. Inconsistent failure mechanisms were observed in ZnO nanowires. Experiments revealed a brittle fracture, whereas simulations using a pairwise potential predicted a phase transformation prior to failure. This inconsistency is addressed in detail from an experimental as well as computational perspective. Lastly, in addition to mechanical properties, preliminary results on the electromechanical properties of gallium nitride nanowires are also reported. Initial investigations reveal that the piezoresistive and piezoelectric behaviour of nanowires is different from bulk gallium nitride.

  15. Study of spin dynamics and damping on the magnetic nanowire arrays with various nanowire widths

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Jaehun [Department of Physics, Inha University, Incheon, 402-751 (Korea, Republic of); Fujii, Yuya; Konioshi, Katsunori [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan); Yoon, Jungbum [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Kim, Nam-Hui; Jung, Jinyong [Department of Physics, Inha University, Incheon, 402-751 (Korea, Republic of); Miwa, Shinji [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan); Jung, Myung-Hwa [Department of Physics, Sogang University, Seoul, 121-742 (Korea, Republic of); Suzuki, Yoshishige [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan); You, Chun-Yeol, E-mail: cyyou@inha.ac.kr [Department of Physics, Inha University, Incheon, 402-751 (Korea, Republic of)

    2016-07-01

    We investigate the spin dynamics including Gilbert damping in the ferromagnetic nanowire arrays. We have measured the ferromagnetic resonance of ferromagnetic nanowire arrays using vector-network analyzer ferromagnetic resonance (VNA-FMR) and analyzed the results with the micromagnetic simulations. We find excellent agreement between the experimental VNA-FMR spectra and micromagnetic simulations result for various applied magnetic fields. We find that the same tendency of the demagnetization factor for longitudinal and transverse conditions, N{sub z} (N{sub y}) increases (decreases) as increasing the nanowire width in the micromagnetic simulations while N{sub x} is almost zero value in transverse case. We also find that the Gilbert damping constant increases from 0.018 to 0.051 as the increasing nanowire width for the transverse case, while it is almost constant as 0.021 for the longitudinal case. - Highlights: • We investigate the spin dynamic properties in the ferromagnetic nanowire arrays. • The demagnetization factors have similar tendency with the prism geometry results. • The Gilbert damping constant is increased from 0.018 to 0.051 as the increasing nanowire width for the transverse. • The Gilbert damping constant is almost constant as 0.021 for the longitudinal case.

  16. Magnetic and superconducting nanowires

    DEFF Research Database (Denmark)

    Piraux, L.; Encinas, A.; Vila, L.

    2005-01-01

    magnetic and superconducting nanowires. Using different approaches entailing measurements on both single wires and arrays, numerous interesting physical properties have been identified in relation to the nanoscopic dimensions of these materials. Finally, various novel applications of the nanowires are also...

  17. Characterization and modeling of a new magnetorheological damper with meandering type valve using neuro-fuzzy

    Directory of Open Access Journals (Sweden)

    Fitrian Imaduddin

    2017-10-01

    Full Text Available This paper presents the characterization and hysteresis modeling of magnetorheological (MR damper with meandering type valve. The meandering type MR valve, which employs the combination of multiple annular and radial flow passages, has been introduced as the new type of high performance MR valve with higher achievable pressure drop and controllable performance range than similar counterparts in its class. Since the performance of a damper is highly determined by the valve performance, the utilization of the meandering type MR valve in an MR damper could potentially improve the damper performance. The damping force characterization of the MR damper is conducted by measuring the damping force as a response to the variety of harmonic excitations. The hysteresis behavior of the damper is identified by plotting the damping force relationship to the excitation displacement and velocity. For the hysteresis modeling purpose, some parts of the data are taken as the training data source for the optimization parameters in the neuro-fuzzy model. The performance of the trained neuro-fuzzy model is assessed by validating the model output with the remaining measurement data and benchmarking the results with the output of the parametric hysteresis model. The validation results show that the neuro-fuzzy model is demonstrating good agreement with the measurement results indicated by the average relative error of only around 7%. The model also shows robustness with no tendency of growing error when the input values are changed.

  18. Vertically aligned nanowires from boron-doped diamond.

    Science.gov (United States)

    Yang, Nianjun; Uetsuka, Hiroshi; Osawa, Eiji; Nebel, Christoph E

    2008-11-01

    Vertically aligned diamond nanowires with controlled geometrical properties like length and distance between wires were fabricated by use of nanodiamond particles as a hard mask and by use of reactive ion etching. The surface structure, electronic properties, and electrochemical functionalization of diamond nanowires were characterized by atomic force microscopy (AFM) and scanning tunneling microscopy (STM) as well as electrochemical techniques. AFM and STM experiments show that diamond nanowire etched for 10 s have wire-typed structures with 3-10 nm in length and with typically 11 nm spacing in between. The electrode active area of diamond nanowires is enhanced by a factor of 2. The functionalization of nanowire tips with nitrophenyl molecules is characterized by STM on clean and on nitrophenyl molecule-modified diamond nanowires. Tip-modified diamond nanowires are promising with respect to biosensor applications where controlled biomolecule bonding is required to improve chemical stability and sensing significantly.

  19. Nanowire failure: long = brittle and short = ductile.

    Science.gov (United States)

    Wu, Zhaoxuan; Zhang, Yong-Wei; Jhon, Mark H; Gao, Huajian; Srolovitz, David J

    2012-02-08

    Experimental studies of the tensile behavior of metallic nanowires show a wide range of failure modes, ranging from ductile necking to brittle/localized shear failure-often in the same diameter wires. We performed large-scale molecular dynamics simulations of copper nanowires with a range of nanowire lengths and provide unequivocal evidence for a transition in nanowire failure mode with change in nanowire length. Short nanowires fail via a ductile mode with serrated stress-strain curves, while long wires exhibit extreme shear localization and abrupt failure. We developed a simple model for predicting the critical nanowire length for this failure mode transition and showed that it is in excellent agreement with both the simulation results and the extant experimental data. The present results provide a new paradigm for the design of nanoscale mechanical systems that demarcates graceful and catastrophic failure. © 2012 American Chemical Society

  20. Ballistic superconductivity in semiconductor nanowires

    Science.gov (United States)

    Zhang, Hao; Gül, Önder; Conesa-Boj, Sonia; Nowak, Michał P.; Wimmer, Michael; Zuo, Kun; Mourik, Vincent; de Vries, Folkert K.; van Veen, Jasper; de Moor, Michiel W. A.; Bommer, Jouri D. S.; van Woerkom, David J.; Car, Diana; Plissard, Sébastien R; Bakkers, Erik P.A.M.; Quintero-Pérez, Marina; Cassidy, Maja C.; Koelling, Sebastian; Goswami, Srijit; Watanabe, Kenji; Taniguchi, Takashi; Kouwenhoven, Leo P.

    2017-01-01

    Semiconductor nanowires have opened new research avenues in quantum transport owing to their confined geometry and electrostatic tunability. They have offered an exceptional testbed for superconductivity, leading to the realization of hybrid systems combining the macroscopic quantum properties of superconductors with the possibility to control charges down to a single electron. These advances brought semiconductor nanowires to the forefront of efforts to realize topological superconductivity and Majorana modes. A prime challenge to benefit from the topological properties of Majoranas is to reduce the disorder in hybrid nanowire devices. Here we show ballistic superconductivity in InSb semiconductor nanowires. Our structural and chemical analyses demonstrate a high-quality interface between the nanowire and a NbTiN superconductor that enables ballistic transport. This is manifested by a quantized conductance for normal carriers, a strongly enhanced conductance for Andreev-reflecting carriers, and an induced hard gap with a significantly reduced density of states. These results pave the way for disorder-free Majorana devices. PMID:28681843

  1. Meandered Monopoles for 700 MHz LTE Handsets and Improved MIMO Channel Capacity Performance

    Directory of Open Access Journals (Sweden)

    I. Dioum

    2011-12-01

    Full Text Available In this paper, we present the design and the measurement of MIMO meandered monopole antennas and the computation of their channel capacity performance. The initial proposed handset-system is composed of a meandered monopole operating in the LTE 700 MHz band, connected to a parasitic radiating element for the upper 2.5 GHz LTE band. Two antennas of the same kind are then closely positioned on the same 120x50 mm2 Printed Circuit Board (PCB. A neutralization line connects the two antennas to enhance their port-to-port isolation in the 700 MHz band. The computation of the channel capacity performance in this band is based on propagation simulations performed with the GRIMM model from the CREMANT. Two system-prototypes are evaluated: one with the neutralization line for enhanced port-to-port isolation and a second without the neutralization exhibiting poor antenna-to-antenna isolation. It is demonstrated that the neutralization technique helps in giving a minimum improvement of 12% of the capacity performance of the handset-system, and a maximum improvement 46%, in the chosen environment.

  2. Long Silver Nanowires Synthesis by Pulsed Electrodeposition

    Directory of Open Access Journals (Sweden)

    M.R. Batevandi

    2015-09-01

    Full Text Available Silver nanowires were pulse electrodeposited into nanopore anodic alumina oxide templates. The effects of continuous and pulse electrodeposition waveform on the microstructure properties of the nanowire arrays were studied. It is seen that the microstructure of nanowire is depend to pulse condition. The off time duration of pulse waveform enables to control the growth direction of Ag nanowires.

  3. Preparation and characterization of CuO nanowire arrays

    International Nuclear Information System (INIS)

    Yu Dongliang; Ge Chuannan; Du Youwei

    2009-01-01

    CuO nanowire arrays were prepared by oxidation of copper nanowires embedded in anodic aluminum oxide (AAO) membranes. The AAO was fabricated in an oxalic acid at a constant voltage. Copper nanowires were formed in the nanopores of the AAO membranes in an electrochemical deposition process. The oxidized copper nanowires at different temperatures were studied. X-ray diffraction patterns confirmed the formation of a CuO phase after calcining at 500 0 C in air for 30 h. A transmission electron microscopy was used to characterize the nanowire morphologies. Raman spectra were performed to study the CuO nanowire arrays. After measuring, we found that the current-voltage curve of the CuO nanowires is nonlinear.

  4. Bifurcation and stability analysis of rotating chemical spirals in circular domains: Boundary-induced meandering and stabilization

    Science.gov (United States)

    Bär, Markus; Bangia, Anil K.; Kevrekidis, Ioannis G.

    2003-05-01

    Recent experimental and model studies have revealed that the domain size may strongly influence the dynamics of rotating spirals in two-dimensional pattern forming chemical reactions. Hartmann et al. [Phys. Rev. Lett. 76, 1384 (1996)], report a frequency increase of spirals in circular domains with diameters substantially smaller than the spiral wavelength in a large domain for the catalytic NO+CO reaction on a microstructured platinum surface. Accompanying simulations with a simple reaction-diffusion system reproduced the behavior. Here, we supplement these studies by a numerical bifurcation and stability analysis of rotating spirals in a simple activator-inhibitor model. The problem is solved in a corotating frame of reference. No-flux conditions are imposed at the boundary of the circular domain. At large domain sizes, eigenvalues and eigenvectors very close to those corresponding to infinite medium translational invariance are observed. Upon decrease of domain size, we observe a simultaneous change in the rotation frequency and a deviation of these eigenvalues from being neutrally stable (zero real part). The latter phenomenon indicates that the translation symmetry of the spiral solution is appreciably broken due to the interaction with the (now nearby) wall. Various dynamical regimes are found: first, the spiral simply tries to avoid the boundary and its tip moves towards the center of the circular domain corresponding to a negative real part of the “translational” eigenvalues. This effect is noticeable at a domain radius of Rmeandering motion, which may be characterized as boundary-induced spiral meandering. A systematic study of the spiral rotation as a function of a control parameter and the domain size reveals that the meandering instability in large domains becomes suppressed, and the spiral rotation becomes rigid, at a critical radius Rcr,0. Boundary

  5. Moessbauer study of Fe-Co nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Chen Ziyu [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou (China)]. E-mail: chenzy@lzu.edu.cn; Zhan Qingfeng; Xue Desheng; Li Fashen [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou (China); Zhou Xuezhi; Kunkel, Henry; Williams, Gwyn [Department of Physics and Astronomy, the University of Manitoba (Canada)

    2002-01-28

    Arrays of Fe{sub 1-x}Co{sub x} (0.0{<=}x{<=}0.92) nanowires have been prepared by an electrochemical process, co-depositing Fe and Co atoms into the pores of anodic aluminium; their compositions were determined by atomic absorption spectroscopy. Transmission electron microscope results show that the nanowires are regularly spaced and uniform in shape with lengths of about 7.5 {mu}m and diameters of 20 nm. The x-ray diffraction indicates a texture in the deposited nanowires. For the composition below 82 at.% cobalt, the nanowires had a body-centred-cubic structure with a [110] preferred orientation. For the 92 at.% cobalt sample, the alloy exhibited a mixture of bcc and face-centred-cubic structure. The room temperature {sup 57}Fe Moessbauer spectra of the arrays of Fe{sub 1-x}Co{sub x} nanowires have second and fifth absorption lines of the six-line pattern with almost zero intensity, indicating that the internal magnetic field in the nanowires lies along the long axis of the nanowire. The maximum values of the hyperfine field (B{sub hf} 36.6{+-}0.1 T) and isomer shift (IS=0.06{+-}0.01 mm s-1) occur for 44 at.% cobalt. The variations of the isomer shift and the linewidths with composition indicate that the Fe{sub 1-x}Co{sub x} alloy nanowires around the equiatomic composition are in an atomistic disordered state. (author)

  6. Biofunctionalized Magnetic Nanowires

    KAUST Repository

    Kosel, Jurgen

    2013-12-19

    Magnetic nanowires can be used as an alternative method overcoming the limitations of current cancer treatments that lack specificity and are highly cytotoxic. Nanowires are developed so that they selectively attach to cancer cells via antibodies, potentially destroying them when a magnetic field induces their vibration. This will transmit a mechanical force to the targeted cells, which is expected to induce apoptosis on the cancer cells.

  7. Biofunctionalized Magnetic Nanowires

    KAUST Repository

    Kosel, Jü rgen; Ravasi, Timothy; Contreras Gerenas, Maria Fernanda

    2013-01-01

    Magnetic nanowires can be used as an alternative method overcoming the limitations of current cancer treatments that lack specificity and are highly cytotoxic. Nanowires are developed so that they selectively attach to cancer cells via antibodies, potentially destroying them when a magnetic field induces their vibration. This will transmit a mechanical force to the targeted cells, which is expected to induce apoptosis on the cancer cells.

  8. Magnetic drug delivery with FePd nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Pondman, Kirsten M.; Bunt, Nathan D. [Neuro Imaging, MIRA Institute, University of Twente, Enschede (Netherlands); Maijenburg, A. Wouter [Inorganic Material Science, MESA+ Institute for Nanotechnology, University of Twente, Enschede (Netherlands); Wezel, Richard J.A. van [Biomedical Signals and Systems, MIRA, Twente University, Enschede (Netherlands); Kishore, Uday [Centre for Infection, Immunity and Disease Mechanisms, Biosciences, Brunel University, London (United Kingdom); Abelmann, Leon [Transducer Science and Technology group, MESA+ Institute for nanotechnology, University of Twente, Enschede (Netherlands); Elshof, Johan E. ten [Inorganic Material Science, MESA+ Institute for Nanotechnology, University of Twente, Enschede (Netherlands); Haken, Bennie ten, E-mail: b.tenhaken@utwente.nl [Neuro Imaging, MIRA Institute, University of Twente, Enschede (Netherlands)

    2015-04-15

    Magnetic drug delivery is a promising method to target a drug to a diseased area while reducing negative side effects caused by systemic administration of drugs. In magnetic drug delivery a therapeutic agent is coupled to a magnetic nanoparticle. The particles are injected and at the target location withdrawn from blood flow by a magnetic field. In this study a FePd nanowire is developed with optimised properties for magnetic targeting. The nanowires have a high magnetic moment to reduce the field gradient needed to capture them with a magnet. The dimensions and the materials of the nanowire and coating are such that they are dispersable in aqueous media, non-cytotoxic, easily phagocytosed and not complement activating. This is established in several in-vitro tests with macrophage and endothelial cell lines. Along with the nanowires a magnet is designed, optimised for capture of the nanowires from the blood flow in the hind leg of a rat. The system is used in a pilot scale in-vivo experiment. No negative side effects from injection of the nanowires were found within the limited time span of the experiment. In this first pilot experiment no nanowires were found to be targeted by the magnet, or in the liver, kidneys or spleen, most likely the particles were removed during the fixation procedure. - Highlights: • Description of the magnetic properties of nanowires. • Design and characterisation of a biocompatible FePd nanowire. • In-vitro cytotoxicity analysis and immune system responses. • In-vivo magnetic drug delivery using the developed nanowires.

  9. Epitaxy of advanced nanowire quantum devices

    Science.gov (United States)

    Gazibegovic, Sasa; Car, Diana; Zhang, Hao; Balk, Stijn C.; Logan, John A.; de Moor, Michiel W. A.; Cassidy, Maja C.; Schmits, Rudi; Xu, Di; Wang, Guanzhong; Krogstrup, Peter; Op Het Veld, Roy L. M.; Zuo, Kun; Vos, Yoram; Shen, Jie; Bouman, Daniël; Shojaei, Borzoyeh; Pennachio, Daniel; Lee, Joon Sue; van Veldhoven, Petrus J.; Koelling, Sebastian; Verheijen, Marcel A.; Kouwenhoven, Leo P.; Palmstrøm, Chris J.; Bakkers, Erik P. A. M.

    2017-08-01

    Semiconductor nanowires are ideal for realizing various low-dimensional quantum devices. In particular, topological phases of matter hosting non-Abelian quasiparticles (such as anyons) can emerge when a semiconductor nanowire with strong spin-orbit coupling is brought into contact with a superconductor. To exploit the potential of non-Abelian anyons—which are key elements of topological quantum computing—fully, they need to be exchanged in a well-controlled braiding operation. Essential hardware for braiding is a network of crystalline nanowires coupled to superconducting islands. Here we demonstrate a technique for generic bottom-up synthesis of complex quantum devices with a special focus on nanowire networks with a predefined number of superconducting islands. Structural analysis confirms the high crystalline quality of the nanowire junctions, as well as an epitaxial superconductor-semiconductor interface. Quantum transport measurements of nanowire ‘hashtags’ reveal Aharonov-Bohm and weak-antilocalization effects, indicating a phase-coherent system with strong spin-orbit coupling. In addition, a proximity-induced hard superconducting gap (with vanishing sub-gap conductance) is demonstrated in these hybrid superconductor-semiconductor nanowires, highlighting the successful materials development necessary for a first braiding experiment. Our approach opens up new avenues for the realization of epitaxial three-dimensional quantum architectures which have the potential to become key components of various quantum devices.

  10. Synthesis of uniform CdS nanowires in high yield and its single nanowire electrical property

    International Nuclear Information System (INIS)

    Yan Shancheng; Sun Litao; Qu Peng; Huang Ninping; Song Yinchen; Xiao Zhongdang

    2009-01-01

    Large-scale high quality CdS nanowires with uniform diameter were synthesized by using a rapid and simple solvothermal route. Field emission scan electron microscopy (FESEM) and transmission electron microscopy (TEM) images show that the CdS nanowires have diameter of about 26 nm and length up to several micrometres. High resolution TEM (HRTEM) study indicates the single-crystalline nature of CdS nanowires with an oriented growth along the c-axis direction. The optical properties of the products were characterized by UV-vis absorption spectra, photoluminescence spectra and Raman spectra. The resistivity, electron concentration and electron mobility of single NW are calculated by fitting the symmetric I-V curves measured on single NW by the metal-semiconductor-metal model based on thermionic field emission theory. - Graphical abstract: Large-scale high quality CdS nanowires (NWs) with uniform diameter were synthesized by using a rapid and simple solvothermal route. The reaction time is reduced to 2 h, comparing to other synthesis which needed long reaction time up to 12 h. In addition, the as-prepared CdS nanowires have more uniform diameter and high yield. More importantly, the I-V curve of present single CdS nanowire has a good symmetric characteristic as expected by the theory.

  11. Electrochemical synthesis of CORE-shell magnetic nanowires

    KAUST Repository

    Ovejero, Jesús G.

    2015-04-16

    (Fe, Ni, CoFe) @ Au core-shell magnetic nanowires have been synthesized by optimized two-step potentiostatic electrodeposition inside self-assembled nanopores of anodic aluminium templates. The optimal electrochemical parameters (e.g., potential) have been firstly determined for the growth of continuous Au nanotubes at the inner wall of pores. Then, a magnetic core was synthesized inside the Au shells under suitable electrochemical conditions for a wide spectrum of single elements and alloy compositions (e.g., Fe, Ni and CoFe alloys). Novel opportunities offered by such nanowires are discussed particularly the magnetic behavior of (Fe, Ni, CoFe) @ Au core-shell nanowires was tested and compared with that of bare TM nanowires. These core-shell nanowires can be released from the template so, opening novel opportunities for biofunctionalization of individual nanowires.

  12. Metal-dielectric-CNT nanowires for surface-enhanced Raman spectroscopy

    Science.gov (United States)

    Bond, Tiziana C.; Altun, Ali; Park, Hyung Gyu

    2017-10-03

    A sensor with a substrate includes nanowires extending vertically from the substrate, a hafnia coating on the nanowires that provides hafnia coated nanowires, and a noble metal coating on the hafnia coated nanowires. The top of the hafnia and noble metal coated nanowires bent onto one another to create a canopy forest structure. There are numerous randomly arranged holes that let through scattered light. The many points of contact, hot spots, amplify signals. The methods include the steps of providing a Raman spectroscopy substrate, introducing nano crystals to the Raman spectroscopy substrate, growing a forest of nanowires from the nano crystals on the Raman spectroscopy substrate, coating the nanowires with hafnia providing hafnia coated nanowires, and coating the hafnia coated nanowires with a noble metal or other metal.

  13. Design and Characterisation of III-V Semiconductor Nanowire Lasers

    Science.gov (United States)

    Saxena, Dhruv

    The development of small, power-efficient lasers underpins many of the technologies that we utilise today. Semiconductor nanowires are promising for miniaturising lasers to even smaller dimensions. III-V semiconductors, such as Gallium Arsenide (GaAs) and Indium Phosphide (InP), are the most widely used materials for optoelectronic devices and so the development of nanowire lasers based on these materials is expected to have technologically significant outcomes. This PhD dissertation presents a comprehensive study of the design of III-V semiconductor nanowire lasers, with bulk and quantum confined active regions. Based on the design, various III-V semiconductor nanowire lasers are demonstrated, namely, GaAs nanowire lasers, GaAs/AlGaAs multi-quantum well (MQW) nanowire lasers and InP nanowire lasers. These nanowire lasers are shown to operate at room temperature, have low thresholds, and lase from different transverse modes. The structural and optoelectronic quality of nanowire lasers are characterised via electron microscopy and photoluminescence spectroscopic techniques. Lasing is characterised in all these devices by optical pumping. The lasing characteristics are analysed by rate equation modelling and the lasing mode(s) in these devices is characterised by threshold gain modelling, polarisation measurements and Fourier plane imaging. Firstly, GaAs nanowire lasers that operate at room temperature are demonstrated. This is achieved by determining the optimal nanowire diameter to reduce threshold gain and by passivating nanowires to improve their quantum efficiency (QE). High-quality surface passivated GaAs nanowires of suitable diameters are grown. The growth procedure is tailored to improve both QE and structural uniformity of nanowires. Room-temperature lasing is demonstrated from individual nanowires and lasing is characterised to be from TM01 mode by threshold gain modelling. To lower threshold even further, nanowire lasers with GaAs/AlGaAs coaxial multi

  14. Reversal modes in asymmetric Ni nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Leighton, B.; Pereira, A. [Departamento de Fisica, Universidad de Santiago de Chile (USACH), Avda. Ecuador 3493, 917-0124 Santiago (Chile); Escrig, J., E-mail: jescrigm@gmail.com [Departamento de Fisica, Universidad de Santiago de Chile (USACH), Avda. Ecuador 3493, 917-0124 Santiago (Chile); Center for the Development of Nanoscience and Nanotechnology (CEDENNA), Avda. Ecuador 3493, 917-0124 Santiago (Chile)

    2012-11-15

    We have investigated the evolution of the magnetization reversal mechanism in asymmetric Ni nanowires as a function of their geometry. Circular nanowires are found to reverse their magnetization by the propagation of a vortex domain wall, while in very asymmetric nanowires the reversal is driven by the propagation of a transverse domain wall. The effect of shape asymmetry of the wire on coercivity and remanence is also studied. Angular dependence of the remanence and coercivity is also addressed. Tailoring the magnetization reversal mechanism in asymmetric nanowires can be useful for magnetic logic and race-track memory, both of which are based on the displacement of magnetic domain walls. Finally, an alternative method to detect the presence of magnetic drops is proposed. - Highlights: Black-Right-Pointing-Pointer Asymmetry strongly modifies the magnetic behavior of a wire. Black-Right-Pointing-Pointer Very asymmetric nanowires reverse their magnetization by a transverse domain wall. Black-Right-Pointing-Pointer An alternative method to detect the presence of magnetic drops is proposed. Black-Right-Pointing-Pointer Tailoring the reversal mode in asymmetric nanowires can be useful for potential applications.

  15. Stability of Organic Nanowires

    DEFF Research Database (Denmark)

    Balzer, F.; Schiek, M.; Wallmann, I.

    2011-01-01

    The morphological stability of organic nanowires over time and under thermal load is of major importance for their use in any device. In this study the growth and stability of organic nanowires from a naphthyl end-capped thiophene grown by organic molecular beam deposition is investigated via ato...

  16. Diluted magnetic semiconductor nanowires exhibiting magnetoresistance

    Science.gov (United States)

    Yang, Peidong [El Cerrito, CA; Choi, Heonjin [Seoul, KR; Lee, Sangkwon [Daejeon, KR; He, Rongrui [Albany, CA; Zhang, Yanfeng [El Cerrito, CA; Kuykendal, Tevye [Berkeley, CA; Pauzauskie, Peter [Berkeley, CA

    2011-08-23

    A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga.sub.1-xMn.sub.xN (x=0.07) were synthesized. The nanowires, which have diameters of .about.10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.

  17. Au nanowire junction breakup through surface atom diffusion

    Science.gov (United States)

    Vigonski, Simon; Jansson, Ville; Vlassov, Sergei; Polyakov, Boris; Baibuz, Ekaterina; Oras, Sven; Aabloo, Alvo; Djurabekova, Flyura; Zadin, Vahur

    2018-01-01

    Metallic nanowires are known to break into shorter fragments due to the Rayleigh instability mechanism. This process is strongly accelerated at elevated temperatures and can completely hinder the functioning of nanowire-based devices like e.g. transparent conductive and flexible coatings. At the same time, arranged gold nanodots have important applications in electrochemical sensors. In this paper we perform a series of annealing experiments of gold and silver nanowires and nanowire junctions at fixed temperatures 473, 673, 873 and 973 K (200 °C, 400 °C, 600 °C and 700 °C) during a time period of 10 min. We show that nanowires are especially prone to fragmentation around junctions and crossing points even at comparatively low temperatures. The fragmentation process is highly temperature dependent and the junction region breaks up at a lower temperature than a single nanowire. We develop a gold parametrization for kinetic Monte Carlo simulations and demonstrate the surface diffusion origin of the nanowire junction fragmentation. We show that nanowire fragmentation starts at the junctions with high reliability and propose that aligning nanowires in a regular grid could be used as a technique for fabricating arrays of nanodots.

  18. Core-shell magnetic nanowires fabrication and characterization

    Energy Technology Data Exchange (ETDEWEB)

    Kalska-Szostko, B., E-mail: kalska@uwb.edu.pl [Institute of Chemistry, University of Bialystok, Ciolkowskiego 1K, 15-245 Bialystok (Poland); Faculty of Physics, University of Bialystok, Ciolkowskiego 1L, 15-245 Bialystok, Poland (Poland); Klekotka, U.; Satuła, D. [Institute of Chemistry, University of Bialystok, Ciolkowskiego 1K, 15-245 Bialystok (Poland); Faculty of Physics, University of Bialystok, Ciolkowskiego 1L, 15-245 Bialystok, Poland (Poland)

    2017-02-28

    Highlights: • New approach for nanowires modification are presented. • Physical and chemical characterization of the nanowires are shown. • Properties modulations as an effect of the surface layer composition are discussed. - Abstract: In this paper, a new way of the preparation of core-shell magnetic nanowires has been proposed. For the modification Fe nanowires were prepared by electrodeposition in anodic aluminium oxide matrixes, in first step. In second, by wetting chemical deposition, shell layers of Ag, Au or Cu were obtained. Resultant core-shell nanowires structure was characterized by X-ray diffraction, infrared spectroscopy, transmission electron microscopy, and energy dispersive x-ray. Whereas magnetic properties by Mössbauer spectroscopy.

  19. Template-based fabrication of nanowire-nanotube hybrid arrays

    International Nuclear Information System (INIS)

    Ye Zuxin; Liu Haidong; Schultz, Isabel; Wu Wenhao; Naugle, D G; Lyuksyutov, I

    2008-01-01

    The fabrication and structure characterization of ordered nanowire-nanotube hybrid arrays embedded in porous anodic aluminum oxide (AAO) membranes are reported. Arrays of TiO 2 nanotubes were first deposited into the pores of AAO membranes by a sol-gel technique. Co nanowires were then electrochemically deposited into the TiO 2 nanotubes to form the nanowire-nanotube hybrid arrays. Scanning electron microscopy and transmission electron microscopy measurements showed a high nanowire filling factor and a clean interface between the Co nanowire and the TiO 2 nanotube. Application of these hybrids to the fabrication of ordered nanowire arrays with highly controllable geometric parameters is discussed

  20. Computational thermal-fluid dynamics analysis of the laminar flow regime in the meander flow geometry characterizing the heat exchanger used in high temperature superconducting current leads

    Energy Technology Data Exchange (ETDEWEB)

    Rizzo, Enrico, E-mail: enrico.rizzo@kit.edu [Institute for Technical Physics, Karlsruhe Institute of Technology, 76021 Karlsruhe (Germany); Heller, Reinhard [Institute for Technical Physics, Karlsruhe Institute of Technology, 76021 Karlsruhe (Germany); Richard, Laura Savoldi; Zanino, Roberto [Dipartimento Energia, Politecnico di Torino, 10129 Torino (Italy)

    2013-11-15

    Highlights: • The laminar regime in the meander flow geometry has been analysed with a previously validated computational strategy. • Several meander flow geometries as well as flow conditions have been analysed. • A range for the Reynolds number has been defined in which the flow can be considered laminar. • Correlations for the pressure drop and the heat transfer coefficients in the laminar regime have been derived. • A comparison between the computed the experimental pressure drop of the W7-X HTS current lead prototype is presented. -- Abstract: The Karlsruhe Institute of Technology and the Politecnico di Torino have developed and validated a computational thermal-fluid dynamics (CtFD) strategy for the systematic analysis of the thermal-hydraulics inside the meander flow heat exchanger used in high-temperature superconducting current leads for fusion applications. In the recent past, the application of this CtFD technique has shown that some operating conditions occurring in these devices may not reach the turbulent regime region. With that motivation, the CtFD analysis of the helium thermal-fluid dynamics inside different meander flow geometries is extended here to the laminar flow regime. Our first aim is to clarify under which operative conditions the flow regime can be considered laminar and how the pressure drop as well as the heat transfer are related to the geometrical parameters and to the flow conditions. From the results of this analysis, correlations for the pressure drop and for the heat transfer coefficient in the meander flow geometry have been derived, which are applicable with good accuracy to the design of meander flow heat exchangers over a broad range of geometrical parameters.

  1. Computational thermal-fluid dynamics analysis of the laminar flow regime in the meander flow geometry characterizing the heat exchanger used in high temperature superconducting current leads

    International Nuclear Information System (INIS)

    Rizzo, Enrico; Heller, Reinhard; Richard, Laura Savoldi; Zanino, Roberto

    2013-01-01

    Highlights: • The laminar regime in the meander flow geometry has been analysed with a previously validated computational strategy. • Several meander flow geometries as well as flow conditions have been analysed. • A range for the Reynolds number has been defined in which the flow can be considered laminar. • Correlations for the pressure drop and the heat transfer coefficients in the laminar regime have been derived. • A comparison between the computed the experimental pressure drop of the W7-X HTS current lead prototype is presented. -- Abstract: The Karlsruhe Institute of Technology and the Politecnico di Torino have developed and validated a computational thermal-fluid dynamics (CtFD) strategy for the systematic analysis of the thermal-hydraulics inside the meander flow heat exchanger used in high-temperature superconducting current leads for fusion applications. In the recent past, the application of this CtFD technique has shown that some operating conditions occurring in these devices may not reach the turbulent regime region. With that motivation, the CtFD analysis of the helium thermal-fluid dynamics inside different meander flow geometries is extended here to the laminar flow regime. Our first aim is to clarify under which operative conditions the flow regime can be considered laminar and how the pressure drop as well as the heat transfer are related to the geometrical parameters and to the flow conditions. From the results of this analysis, correlations for the pressure drop and for the heat transfer coefficient in the meander flow geometry have been derived, which are applicable with good accuracy to the design of meander flow heat exchangers over a broad range of geometrical parameters

  2. Electrical conductivity measurements of bacterial nanowires from Pseudomonas aeruginosa

    International Nuclear Information System (INIS)

    Maruthupandy, Muthusamy; Anand, Muthusamy; Beevi, Akbar Sait Hameedha; Priya, Radhakrishnan Jeeva; Maduraiveeran, Govindhan

    2015-01-01

    The extracellular appendages of bacteria (flagella) that transfer electrons to electrodes are called bacterial nanowires. This study focuses on the isolation and separation of nanowires that are attached via Pseudomonas aeruginosa bacterial culture. The size and roughness of separated nanowires were measured using transmission electron microscopy (TEM) and atomic force microscopy (AFM), respectively. The obtained bacterial nanowires indicated a clear image of bacterial nanowires measuring 16 nm in diameter. The formation of bacterial nanowires was confirmed by microscopic studies (AFM and TEM) and the conductivity nature of bacterial nanowire was investigated by electrochemical techniques. Cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS), which are nondestructive voltammetry techniques, suggest that bacterial nanowires could be the source of electrons—which may be used in various applications, for example, microbial fuel cells, biosensors, organic solar cells, and bioelectronic devices. Routine analysis of electron transfer between bacterial nanowires and the electrode was performed, providing insight into the extracellular electron transfer (EET) to the electrode. CV revealed the catalytic electron transferability of bacterial nanowires and electrodes and showed excellent redox activities. CV and EIS studies showed that bacterial nanowires can charge the surface by producing and storing sufficient electrons, behave as a capacitor, and have features consistent with EET. Finally, electrochemical studies confirmed the development of bacterial nanowires with EET. This study suggests that bacterial nanowires can be used to fabricate biomolecular sensors and nanoelectronic devices. (paper)

  3. Quantum transport in nanowire-based hybrid devices

    Energy Technology Data Exchange (ETDEWEB)

    Guenel, Haci Yusuf

    2013-05-08

    We have studied the low-temperature transport properties of nanowires contacted by a normal metal as well as by superconducting electrodes. As a consequence of quantum coherence, we have demonstrated the electron interference effect in different aspects. The mesoscopic phase coherent transport properties were studied by contacting the semiconductor InAs and InSb nanowires with normal metal electrodes. Moreover, we explored the interaction of the microscopic quantum coherence of the nanowires with the macroscopic quantum coherence of the superconductors. In superconducting Nb contacted InAs nanowire junctions, we have investigated the effect of temperature, magnetic field and electric field on the supercurrent. Owing to relatively high critical temperature of superconducting Nb (T{sub c} ∝ 9 K), we have observed the supercurrent up to 4 K for highly doped nanowire-based junctions, while for low doped nanowire-based junctions a full control of the supercurrent was achieved. Due to low transversal dimension of the nanowires, we have found a monotonous decay of the critical current in magnetic field dependent measurements. The experimental results were analyzed within narrow junction model which has been developed recently. At high bias voltages, we have observed subharmonic energy gap structures as a consequence of multiple Andreev reflection. Some of the nanowires were etched, such that the superconducting Nb electrodes are connected to both ends of the nanowire rather than covering the surface of the nanowire. As a result of well defined nanowire-superconductor interfaces, we have examined quasiparticle interference effect in magnetotransport measurements. Furthermore, we have developed a new junction geometry, such that one of the superconducting Nb electrodes is replaced by a superconducting Al. Owing to the smaller critical magnetic field of superconducting Al (B{sub c} ∝ 15-50,mT), compared to superconducting Nb (B{sub c} ∝ 3 T), we were able to studied

  4. Giant magnetoimpedance effect in sputtered single layered NiFe film and meander NiFe/Cu/NiFe film

    International Nuclear Information System (INIS)

    Chen, L.; Zhou, Y.; Lei, C.; Zhou, Z.M.; Ding, W.

    2010-01-01

    Giant magnetoimpedance (GMI) effect on NiFe thin film is very promising due to its application in developing the magnetic field sensors with highly sensitivity and low cost. In this paper, the single layered NiFe thin film and NiFe/Cu/NiFe thin film with a meander structure are prepared by the MEMS technology. The influences of sputtering parameters, film structure and conductor layer width on GMI effect in NiFe single layer and meander NiFe/Cu/NiFe film are investigated. Maximum of the GMI ratio in single layer and sandwich film is 5% and 64%, respectively. The results obtained are useful for developing the high-performance magnetic sensors based on NiFe thin film.

  5. Electrochemical synthesis of highly crystalline copper nanowires

    International Nuclear Information System (INIS)

    Kaur, Amandeep; Gupta, Tanish; Kumar, Akshay; Kumar, Sanjeev; Singh, Karamjeet; Thakur, Anup

    2015-01-01

    Copper nanowires were fabricated within the pores of anodic alumina template (AAT) by template synthesis method at pH = 2.9. X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) were used to investigate the structure, morphology and composition of fabricated nanowires. These characterizations revealed that the deposited copper nanowires were highly crystalline in nature, dense and uniform. The crystalline copper nanowires are promising in application of future nanoelectronic devices and circuits

  6. Enhanced ionized impurity scattering in nanowires

    Science.gov (United States)

    Oh, Jung Hyun; Lee, Seok-Hee; Shin, Mincheol

    2013-06-01

    The electronic resistivity in silicon nanowires is investigated by taking into account scattering as well as the donor deactivation from the dielectric mismatch. The effects of poorly screened dopant atoms from the dielectric mismatch and variable carrier density in nanowires are found to play a crucial role in determining the nanowire resistivity. Using Green's function method within the self-consistent Born approximation, it is shown that donor deactivation and ionized impurity scattering combined with the charged interface traps successfully to explain the increase in the resistivity of Si nanowires while reducing the radius, measured by Björk et al. [Nature Nanotech. 4, 103 (2009)].

  7. Bending and tensile deformation of metallic nanowires

    International Nuclear Information System (INIS)

    McDowell, Matthew T; Leach, Austin M; Gall, Ken

    2008-01-01

    Using molecular statics simulations and the embedded atom method, a technique for bending silver nanowires and calculating Young's modulus via continuum mechanics has been developed. The measured Young's modulus values extracted from bending simulations were compared with modulus values calculated from uniaxial tension simulations for a range of nanowire sizes, orientations and geometries. Depending on axial orientation, the nanowires exhibit stiffening or softening under tension and bending as size decreases. Bending simulations typically result in a greater variation of Young's modulus values with nanowire size compared with tensile deformation, which indicates a loading-method-dependent size effect on elastic properties at sub-5 nm wire diameters. Since the axial stress is maximized at the lateral surfaces in bending, the loading-method-dependent size effect is postulated to be primarily a result of differences in nanowire surface and core elastic modulus. The divergence of Young's modulus from the bulk modulus in these simulations occurs at sizes below the range in which experiments have demonstrated a size scale effect on elastic properties of metallic nanowires. This difference indicates that other factors beyond native metallic surface properties play a role in experimentally observed nanowire elastic modulus size effects

  8. Bandwidth enhancement of a dual band planar monopole antenna using meandered microstrip feeding.

    Science.gov (United States)

    Ahsan, M R; Islam, M T; Habib Ullah, M; Misran, N

    2014-01-01

    A meandered-microstrip fed circular shaped monopole antenna loaded with vertical slots on a high dielectric material substrate (ε r = 15) is proposed in this paper. The performance criteria of the proposed antenna have been experimentally verified by fabricating a printed prototype. The experimental results show that the proposed antenna has achieved wider bandwidth with satisfactory gain by introducing meandered-microstrip feeding in assistant of partial ground plane. It is observed that, the -10 dB impedance bandwidth of the proposed antenna at lower band is 44.4% (600 MHz-1 GHz) and at upper band is 28% (2.25 GHz-2.95 GHz). The measured maximum gains of -1.18 dBi and 4.87 dBi with maximum radiation efficiencies have been observed at lower band and upper band, respectively. The antenna configuration and parametric study have been carried out with the help of commercially available computer-aided EM simulator, and a good accordance is perceived in between the simulated and measured results. The analysis of performance criteria and almost consistent radiation pattern make the proposed antenna a suitable candidate for UHF RFID, WiMAX, and WLAN applications.

  9. Understanding the vapor-liquid-solid growth and composition of ternary III-V nanowires and nanowire heterostructures

    Science.gov (United States)

    Dubrovskii, V. G.

    2017-11-01

    Based on the recent achievements in vapor-liquid-solid (VLS) synthesis, characterization and modeling of ternary III-V nanowires and axial heterostructures within such nanowires, we try to understand the major trends in their compositional evolution from a general theoretical perspective. Clearly, the VLS growth of ternary materials is much more complex than in standard vapor-solid epitaxy techniques, and even maintaining the necessary control over the composition of steady-state ternary nanowires is far from straightforward. On the other hand, VLS nanowires offer otherwise unattainable material combinations without introducing structural defects and hence are very promising for next-generation optoelectronic devices, in particular those integrated with a silicon electronic platform. In this review, we consider two main problems. First, we show how and by means of which parameters the steady-state composition of Au-catalyzed or self-catalyzed ternary III-V nanowires can be tuned to a desired value and why it is generally different from the vapor composition. Second, we present some experimental data and modeling results for the interfacial abruptness across axial nanowire heterostructures, both in Au-catalyzed and self-catalyzed VLS growth methods. Refined modeling allows us to formulate some general growth recipes for suppressing the unwanted reservoir effect in the droplet and sharpening the nanowire heterojunctions. We consider and refine two approaches developed to date, namely the regular crystallization model for a liquid alloy with a critical size of only one III-V pair at high supersaturations or classical binary nucleation theory with a macroscopic critical nucleus at modest supersaturations.

  10. Solution-processed copper-nickel nanowire anodes for organic solar cells

    Science.gov (United States)

    Stewart, Ian E.; Rathmell, Aaron R.; Yan, Liang; Ye, Shengrong; Flowers, Patrick F.; You, Wei; Wiley, Benjamin J.

    2014-05-01

    This work describes a process to make anodes for organic solar cells from copper-nickel nanowires with solution-phase processing. Copper nanowire films were coated from solution onto glass and made conductive by dipping them in acetic acid. Acetic acid removes the passivating oxide from the surface of copper nanowires, thereby reducing the contact resistance between nanowires to nearly the same extent as hydrogen annealing. Films of copper nanowires were made as oxidation resistant as silver nanowires under dry and humid conditions by dipping them in an electroless nickel plating solution. Organic solar cells utilizing these completely solution-processed copper-nickel nanowire films exhibited efficiencies of 4.9%.This work describes a process to make anodes for organic solar cells from copper-nickel nanowires with solution-phase processing. Copper nanowire films were coated from solution onto glass and made conductive by dipping them in acetic acid. Acetic acid removes the passivating oxide from the surface of copper nanowires, thereby reducing the contact resistance between nanowires to nearly the same extent as hydrogen annealing. Films of copper nanowires were made as oxidation resistant as silver nanowires under dry and humid conditions by dipping them in an electroless nickel plating solution. Organic solar cells utilizing these completely solution-processed copper-nickel nanowire films exhibited efficiencies of 4.9%. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr01024h

  11. An inkjet printed meandered dipole antenna for RF passive sensing applications

    KAUST Repository

    Quddious, Abdul

    2016-04-10

    In this paper, a low cost inkjet printed antenna envisioned for integration with printed and non-printed RF sensors is presented. The proposed meandered dipole dual-loop antenna is designed on a 0.25mm thick paper substrate. The antenna not only gives wireless remote sensing capability but also allows remote identification functionality. The antenna structure consists of an outer loop and an inner loop resonating at 3GHz and 5GHz respectively and used for obtaining unique electromagnetic signature by modifications in their dimensions.

  12. Nanowire sensor, sensor array, and method for making the same

    Science.gov (United States)

    Yun, Minhee (Inventor); Myung, Nosang (Inventor); Vasquez, Richard (Inventor); Homer, Margie (Inventor); Ryan, Margaret (Inventor); Yen, Shiao-Pin (Inventor); Fleurial, Jean-Pierre (Inventor); Bugga, Ratnakumar (Inventor); Choi, Daniel (Inventor); Goddard, William (Inventor)

    2012-01-01

    The present invention relates to a nanowire sensor and method for forming the same. More specifically, the nanowire sensor comprises at least one nanowire formed on a substrate, with a sensor receptor disposed on a surface of the nanowire, thereby forming a receptor-coated nanowire. The nanowire sensor can be arranged as a sensor sub-unit comprising a plurality of homogeneously receptor-coated nanowires. A plurality of sensor subunits can be formed to collectively comprise a nanowire sensor array. Each sensor subunit in the nanowire sensor array can be formed to sense a different stimulus, allowing a user to sense a plurality of stimuli. Additionally, each sensor subunit can be formed to sense the same stimuli through different aspects of the stimulus. The sensor array is fabricated through a variety of techniques, such as by creating nanopores on a substrate and electrodepositing nanowires within the nanopores.

  13. Diamond nanowires: fabrication, structure, properties, and applications.

    Science.gov (United States)

    Yu, Yuan; Wu, Liangzhuan; Zhi, Jinfang

    2014-12-22

    C(sp(3) )C-bonded diamond nanowires are wide band gap semiconductors that exhibit a combination of superior properties such as negative electron affinity, chemical inertness, high Young's modulus, the highest hardness, and room-temperature thermal conductivity. The creation of 1D diamond nanowires with their giant surface-to-volume ratio enhancements makes it possible to control and enhance the fundamental properties of diamond. Although theoretical comparisons with carbon nanotubes have shown that diamond nanowires are energetically and mechanically viable structures, reproducibly synthesizing the crystalline diamond nanowires has remained challenging. We present a comprehensive, up-to-date review of diamond nanowires, including a discussion of their synthesis along with their structures, properties, and applications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Guided Growth of Horizontal p-Type ZnTe Nanowires

    Science.gov (United States)

    2016-01-01

    A major challenge toward large-scale integration of nanowires is the control over their alignment and position. A possible solution to this challenge is the guided growth process, which enables the synthesis of well-aligned horizontal nanowires that grow according to specific epitaxial or graphoepitaxial relations with the substrate. However, the guided growth of horizontal nanowires was demonstrated for a limited number of materials, most of which exhibit unintentional n-type behavior. Here we demonstrate the vapor–liquid–solid growth of guided horizontal ZnTe nanowires and nanowalls displaying p-type behavior on four different planes of sapphire. The growth directions of the nanowires are determined by epitaxial relations between the nanowires and the substrate or by a graphoepitaxial effect that guides their growth along nanogrooves or nanosteps along the surface. We characterized the crystallographic orientations and elemental composition of the nanowires using transmission electron microscopy and photoluminescence. The optoelectronic and electronic properties of the nanowires were studied by fabricating photodetectors and top-gate thin film transistors. These measurements showed that the guided ZnTe nanowires are p-type semiconductors and are photoconductive in the visible range. The guided growth of horizontal p-type nanowires opens up the possibility of parallel nanowire integration into functional systems with a variety of potential applications not available by other means. PMID:27885331

  15. Pattern analysis of aligned nanowires in a microchannel

    International Nuclear Information System (INIS)

    Jeon, Young Jin; Kang, Hyun Wook; Ko, Seung Hwan; Sung, Hyung Jin

    2013-01-01

    An image processing method for evaluating the quality of nanowire alignment in a microchannel is described. A solution containing nanowires flowing into a microchannel will tend to deposit the nanowires on the bottom surface of the channel via near-wall shear flows. The deposited nanowires generally form complex directional structures along the direction of flow, and the physical properties of these structures depend on the structural morphology, including the alignment quality. A quantitative analysis approach to characterizing the nanowire alignment is needed to estimate the useful features of the nanowire structures. This analysis consists of several image processing methods, including ridge detection, texton analysis and autocorrelation function (ACF) calculation. The ridge detection method improved the ACF by extracting nanowire frames 1–2 pixels in width. Dilation filters were introduced to permit a comparison of the ACF results calculated from different images, regardless of the nanowire orientation. An ACF based on the FFT was then calculated over a square interrogation window. The alignment angle probability distribution was obtained using texton analysis. Monte Carlo simulations of artificially generated images were carried out, and the new algorithm was applied to images collected using two types of microscopy. (paper)

  16. Charging effects and surface potential variations of Cu-based nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Nunes, D., E-mail: daniela.gomes@fct.unl.pt [i3N/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lisboa, Campus de Caparica, 2829-516 Caparica (Portugal); Calmeiro, T.R.; Nandy, S.; Pinto, J.V.; Pimentel, A.; Barquinha, P. [i3N/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lisboa, Campus de Caparica, 2829-516 Caparica (Portugal); Carvalho, P.A. [SINTEF Materials and Chemistry, PB 124 Blindern, NO-0314, Oslo (Norway); CeFEMA, Instituto Superior Técnico, Universidade de Lisboa, 1049-001, Lisboa (Portugal); Walmsley, J.C. [SINTEF Materials and Chemistry, Materials and Nanotechnology, Høgskoleringen 5, 7034 Trondheim (Norway); Fortunato, E., E-mail: emf@fct.unl.pt [i3N/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lisboa, Campus de Caparica, 2829-516 Caparica (Portugal); Martins, R., E-mail: rm@uninova.pt [i3N/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lisboa, Campus de Caparica, 2829-516 Caparica (Portugal)

    2016-02-29

    The present work reports charging effects and surface potential variations in pure copper, cuprous oxide and cupric oxide nanowires observed by electrostatic force microscopy (EFM) and Kelvin probe force microscopy (KPFM). The copper nanowires were produced by wet synthesis, oxidation into cuprous oxide nanowires was achieved through microwave irradiation and cupric oxide nanowires were obtained via furnace annealing in atmospheric conditions. Structural characterization of the nanowires was carried out by X-ray diffraction, scanning electron microscopy, transmission electron microscopy and energy dispersive X-ray spectroscopy. During the EFM experiments the electrostatic field of the positive probe charged negatively the Cu-based nanowires, which in turn polarized the SiO{sub 2} dielectric substrate. Both the probe/nanowire capacitance as well as the substrate polarization increased with the applied bias. Cu{sub 2}O and CuO nanowires behaved distinctively during the EFM measurements in accordance with their band gap energies. The work functions (WF) of the Cu-based nanowires, obtained by KPFM measurements, yielded WF{sub CuO} > WF{sub Cu} > WF{sub Cu{sub 2O}}. - Highlights: • Charge distribution study in Cu, Cu{sub 2}O and CuO nanowires through electrostatic force microscopy • Structural/surface defect role on the charge distribution along the Cu nanowires • Determination of the nanowire work functions by Kelvin probe force microscopy • Three types of nanowires give a broad idea of charge behavior on Cu based-nanowires.

  17. Selective growth of gallium nitride nanowires by femtosecond laser patterning

    International Nuclear Information System (INIS)

    Ng, D.K.T.; Hong, M.H.; Tan, L.S.; Zhou, Y.; Chen, G.X.

    2008-01-01

    We report on gallium nitride (GaN) nanowires grown using pulsed laser ablation, adopting the vapor-liquid-solid (VLS) growth mechanism. The GaN nanowires are obtained based on the principle that a catalyst is required to initiate the nanowires growth. Locations of the GaN nanowires are patterned using femtosecond laser and focused ion beam. Scanning electron microscopy (SEM) is used to characterize the nanowires. This patterning of GaN nanowires will enable selective growth of nanowires and bottom-up assembly of integrated electronic and photonic devices

  18. Selective growth of gallium nitride nanowires by femtosecond laser patterning

    Energy Technology Data Exchange (ETDEWEB)

    Ng, D.K.T. [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore); Data Storage Institute, Agency for Science, Technology and Research, DSI Building, 5 Engineering Drive 1, Singapore 117608 (Singapore); Hong, M.H. [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore); Data Storage Institute, Agency for Science, Technology and Research, DSI Building, 5 Engineering Drive 1, Singapore 117608 (Singapore)], E-mail: HONG_Minghui@dsi.a-star.edu.sg; Tan, L.S. [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore); Zhou, Y. [Data Storage Institute, Agency for Science, Technology and Research, DSI Building, 5 Engineering Drive 1, Singapore 117608 (Singapore); Department of Mechanical Engineering, National University of Singapore, 2 Engineering Drive 3, Singapore 117576 (Singapore); Chen, G.X. [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore)

    2008-01-31

    We report on gallium nitride (GaN) nanowires grown using pulsed laser ablation, adopting the vapor-liquid-solid (VLS) growth mechanism. The GaN nanowires are obtained based on the principle that a catalyst is required to initiate the nanowires growth. Locations of the GaN nanowires are patterned using femtosecond laser and focused ion beam. Scanning electron microscopy (SEM) is used to characterize the nanowires. This patterning of GaN nanowires will enable selective growth of nanowires and bottom-up assembly of integrated electronic and photonic devices.

  19. Quantum transport in semiconductor nanowires

    NARCIS (Netherlands)

    Van Dam, J.

    2006-01-01

    This thesis describes a series of experiments aimed at understanding the low-temperature electrical transport properties of semiconductor nanowires. The semiconductor nanowires (1-100 nm in diameter) are grown from nanoscale gold particles via a chemical process called vapor-liquid-solid (VLS)

  20. Angular Magnetoresistance of Nanowires with Alternating Cobalt and Nickel Segments

    KAUST Repository

    Mohammed, Hanan

    2017-06-22

    Magnetization reversal in segmented Co/Ni nanowires with varying number of segments was studied using angular Magnetoresistance (MR) measurements on isolated nanowires. The MR measurements offer an insight into the pinning of domain walls within the nanowires. Angular MR measurements were performed on nanowires with two and multiple segments by varying the angle between the applied magnetic field and nanowire (−90° ≤θ≤90°). The angular MR measurements reveal that at lower values of θ the switching fields are nearly identical for the multisegmented and two-segmented nanowires, whereas at higher values of θ, a decrease in the switching field is observed in the case of two segmented nanowires. The two segmented nanowires generally exhibit a single domain wall pinning event, whereas an increased number of pinning events are characteristic of the multisegmented nanowires at higher values of θ. In-situ magnetic force microscopy substantiates reversal by domain wall nucleation and propagation in multisegmented nanowires.

  1. Angular Magnetoresistance of Nanowires with Alternating Cobalt and Nickel Segments

    KAUST Repository

    Mohammed, Hanan; Corte-Leon, H.; Ivanov, Yurii P.; Moreno, J. A.; Kazakova, O.; Kosel, Jü rgen

    2017-01-01

    Magnetization reversal in segmented Co/Ni nanowires with varying number of segments was studied using angular Magnetoresistance (MR) measurements on isolated nanowires. The MR measurements offer an insight into the pinning of domain walls within the nanowires. Angular MR measurements were performed on nanowires with two and multiple segments by varying the angle between the applied magnetic field and nanowire (−90° ≤θ≤90°). The angular MR measurements reveal that at lower values of θ the switching fields are nearly identical for the multisegmented and two-segmented nanowires, whereas at higher values of θ, a decrease in the switching field is observed in the case of two segmented nanowires. The two segmented nanowires generally exhibit a single domain wall pinning event, whereas an increased number of pinning events are characteristic of the multisegmented nanowires at higher values of θ. In-situ magnetic force microscopy substantiates reversal by domain wall nucleation and propagation in multisegmented nanowires.

  2. Ultraviolet photodetectors made from SnO2 nanowires

    International Nuclear Information System (INIS)

    Wu, Jyh-Ming; Kuo, Cheng-Hsiang

    2009-01-01

    SnO 2 nanowires can be synthesized on alumina substrates and formed into an ultraviolet (UV) photodetector. The photoelectric current of the SnO 2 nanowires exhibited a rapid photo-response as a UV lamp was switched on and off. The ratio of UV-exposed current to dark current has been investigated. The SnO 2 nanowires were synthesized by a vapor-liquid-solid process at a temperature of 900 o C. It was found that the nanowires were around 70-100 nm in diameter and several hundred microns in length. High-resolution transmission electron microscopy (HRTEM) image indicated that the nanowires grew along the [200] axis as a single crystallinity. Cathodoluminescence (CL), thin-film X-ray diffractometry, and X-ray photoelectron spectroscopy (XPS) were used to characterize the as-synthesized nanowires.

  3. Pd nanowire arrays as electrocatalysts for ethanol electrooxidation

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Hong; Cheng, Faliang [Dongguan University of Technology, Dongguan 523106 (China); Xu, Changwei; Jiang, Sanping [School of Mechanical and Aerospace Engineering, Nanyang Technological University, Singapore 639798 (Singapore)

    2007-05-15

    Highly ordered Pd nanowire arrays were prepared by template-electrodeposition method using anodic aluminum oxide template. The Pd nanowire arrays, in this paper, have high electrochemical active surface and show excellent catalytic properties for ethanol electrooxidation in alkaline media. The activity of Pd nanowire arrays for ethanol oxidation is not only higher that of Pd film, but also higher than that of commercial E-TEK PtRu(2:1 by weight)/C. The micrometer sized pores and channels in nanowire arrays act as structure units. They make liquid fuel diffuse into and products diffuse out of the catalysts layer much easier, therefore, the utilization efficiency of catalysts gets higher. Pd nanowire arrays are stable catalysts for ethanol oxidation. The nanowire arrays may be a great potential in direct ethanol fuel cells and ethanol sensors. (author)

  4. Synthetic Strategies and Applications of GaN Nanowires

    Directory of Open Access Journals (Sweden)

    Guoquan Suo

    2014-01-01

    Full Text Available GaN is an important III-V semiconductor material with a direct band gap of 3.4 eV at 300 K. The wide direct band gap makes GaN an attractive material for various applications. GaN nanowires have demonstrated significant potential as fundamental building blocks for nanoelectronic and nanophotonic devices and also offer substantial promise for integrated nanosystems. In this paper, we provide a comprehensive review on the general synthetic strategies, characterizations, and applications of GaN nanowires. We first summarize several growth techniques of GaN nanowires. Subsequently, we discuss mechanisms involved to generate GaN nanowires from different synthetic schemes and conditions. Then we review some characterization methods of GaN nanowires. Finally, several kinds of main applications of GaN nanowires are discussed.

  5. Dimensional effects in semiconductor nanowires; Dimensionseffekte in Halbleiternanodraehten

    Energy Technology Data Exchange (ETDEWEB)

    Stichtenoth, Daniel

    2008-06-23

    Nanomaterials show new physical properties, which are determined by their size and morphology. These new properties can be ascribed to the higher surface to volume ratio, to quantum size effects or to a form anisotropy. They may enable new technologies. The nanowires studied in this work have a diameter of 4 to 400 nm and a length up to 100 {mu}m. The semiconductor material used is mainly zinc oxide (ZnO), zinc sulfide (ZnS) and gallium arsenide (GaAs). All nanowires were synthesized according to the vapor liquid solid mechanism, which was originally postulated for the growth of silicon whiskers. Respective modifications for the growth of compound semiconductor nanowires are discussed. Detailed luminescence studies on ZnO nanowires with different diameters show pronounced size effects which can be attributed to the origins given above. Similar to bulk material, a tuning of the material properties is often essential for a further functionalization of the nanowires. This is typical realized by doping the source material. It becomes apparent, that a controlled doping of nanowires during the growth process is not successful. Here an alternative method is chosen: the doping after the growth by ion implantation. However, the doping by ion implantation goes always along with the creation of crystal defects. The defects have to be annihilated in order to reach an activation of th introduced dopants. At high ion fluences and ion masses the sputtering of surface atoms becomes more important. This results in a characteristic change in the morphology of the nanowires. In detail, the doping of ZnO and ZnS nanowires with color centers (manganese and rare earth elements) is demonstrated. Especially, the intra 3d luminescence of manganese implanted ZnS nanostructures shows a strong dependence of the nanowire diameter and morphology. This dependence can be described by expanding Foersters model (which describes an energy transfer to the color centers) by a dimensional parameter

  6. Transformation of bulk alloys to oxide nanowires

    Science.gov (United States)

    Lei, Danni; Benson, Jim; Magasinski, Alexandre; Berdichevsky, Gene; Yushin, Gleb

    2017-01-01

    One dimensional (1D) nanostructures offer prospects for enhancing the electrical, thermal, and mechanical properties of a broad range of functional materials and composites, but their synthesis methods are typically elaborate and expensive. We demonstrate a direct transformation of bulk materials into nanowires under ambient conditions without the use of catalysts or any external stimuli. The nanowires form via minimization of strain energy at the boundary of a chemical reaction front. We show the transformation of multimicrometer-sized particles of aluminum or magnesium alloys into alkoxide nanowires of tunable dimensions, which are converted into oxide nanowires upon heating in air. Fabricated separators based on aluminum oxide nanowires enhanced the safety and rate capabilities of lithium-ion batteries. The reported approach allows ultralow-cost scalable synthesis of 1D materials and membranes.

  7. Superconductive silicon nanowires using gallium beam lithography.

    Energy Technology Data Exchange (ETDEWEB)

    Henry, Michael David; Jarecki, Robert Leo,

    2014-01-01

    This work was an early career LDRD investigating the idea of using a focused ion beam (FIB) to implant Ga into silicon to create embedded nanowires and/or fully suspended nanowires. The embedded Ga nanowires demonstrated electrical resistivity of 5 m-cm, conductivity down to 4 K, and acts as an Ohmic silicon contact. The suspended nanowires achieved dimensions down to 20 nm x 30 nm x 10 m with large sensitivity to pressure. These structures then performed well as Pirani gauges. Sputtered niobium was also developed in this research for use as a superconductive coating on the nanowire. Oxidation characteristics of Nb were detailed and a technique to place the Nb under tensile stress resulted in the Nb resisting bulk atmospheric oxidation for up to years.

  8. Silicon nanowire-based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Stelzner, Th; Pietsch, M; Andrae, G; Falk, F; Ose, E; Christiansen, S [Institute of Photonic Technology, Albert-Einstein-Strasse 9, D-07745 Jena (Germany)], E-mail: thomas.stelzner@ipht-jena.de

    2008-07-23

    The fabrication of silicon nanowire-based solar cells on silicon wafers and on multicrystalline silicon thin films on glass is described. The nanowires show a strong broadband optical absorption, which makes them an interesting candidate to serve as an absorber in solar cells. The operation of a solar cell is demonstrated with n-doped nanowires grown on a p-doped silicon wafer. From a partially illuminated area of 0.6 cm{sup 2} open-circuit voltages in the range of 230-280 mV and a short-circuit current density of 2 mA cm{sup -2} were obtained.

  9. Silicon nanowire-based solar cells

    International Nuclear Information System (INIS)

    Stelzner, Th; Pietsch, M; Andrae, G; Falk, F; Ose, E; Christiansen, S

    2008-01-01

    The fabrication of silicon nanowire-based solar cells on silicon wafers and on multicrystalline silicon thin films on glass is described. The nanowires show a strong broadband optical absorption, which makes them an interesting candidate to serve as an absorber in solar cells. The operation of a solar cell is demonstrated with n-doped nanowires grown on a p-doped silicon wafer. From a partially illuminated area of 0.6 cm 2 open-circuit voltages in the range of 230-280 mV and a short-circuit current density of 2 mA cm -2 were obtained

  10. Long-range magnetostatic interactions in arrays of nanowires

    CERN Document Server

    Raposo, V; González, J M; Vázquez, M

    2000-01-01

    Experimental measurements and micromagnetic simulations of the hysteresis loops of arrays of cobalt nanowires are compared here. Arrays of cobalt nanowires (200 nm in diameter) were electrodeposited into the pores of alumina membranes (thickness 60 mu m). Their hysteresis loops along the axial direction of nanowires were measured using vibrating sample magnetometry. Micromagnetic simulations were performed considering dipolar interaction between nanowires leading to similar hysteresis loops as those obtained experimentally.

  11. Enhanced photovoltaic performance of an inclined nanowire array solar cell.

    Science.gov (United States)

    Wu, Yao; Yan, Xin; Zhang, Xia; Ren, Xiaomin

    2015-11-30

    An innovative solar cell based on inclined p-i-n nanowire array is designed and analyzed. The results show that the inclined geometry can sufficiently increase the conversion efficiency of solar cells by enhancing the absorption of light in the active region. By tuning the nanowire array density, nanowire diameter, nanowire length, as well as the proportion of intrinsic region of the inclined nanowire solar cell, a remarkable efficiency in excess of 16% can be obtained in GaAs. Similar results have been obtained in InP and Si nanowire solar cells, demonstrating the universality of the performance enhancement of inclined nanowire arrays.

  12. Constricted nanowire with stabilized magnetic domain wall

    International Nuclear Information System (INIS)

    Sbiaa, R.; Al Bahri, M.

    2016-01-01

    Domain wall (DW)-based magnetic memory offers the possibility for increasing the storage capacity. However, stability of DW remains the major drawback of this scheme. In this letter, we propose a stepped nanowire for pinning DW in a desirable position. From micromagnetic simulation, the proposed design applied to in-plane magnetic anisotropy materials shows that by adjusting the nanowire step size and its width it is possible to stabilize DW for a desirable current density range. In contrast, only a movement of DW could be seen for conventional nanowire. An extension to a multi-stepped nanowire could be used for multi-bit per cell magnetic memory. - Highlights: • A stepped nanowire is proposed to pin domain wall in desired position. • The new structure can be made by a simple off set of two single nanowires. • The critical current for moving domain wall from one state to the other could be tuned by adjusting the geometry of the device. • The device could be used for multi-bit per cell memory by extending the steps in the device.

  13. Electrical and Optical Characterization of Nanowire based Semiconductor Devices

    Science.gov (United States)

    Ayvazian, Talin

    This research project is focused on a new strategy for the creation of nanowire based semiconductor devices. The main goal is to understand and optimize the electrical and optical properties of two types of nanoscale devices; in first type lithographically patterned nanowire electrodeposition (LPNE) method has been utilized to fabricate nanowire field effect transistors (NWFET) and second type involved the development of light emitting semiconductor nanowire arrays (NWLED). Field effect transistors (NWFETs) have been prepared from arrays of polycrystalline cadmium selenide (pc-CdSe) nanowires using a back gate configuration. pc-CdSe nanowires were fabricated using the lithographically patterned nanowire electrode- position (LPNE) process on SiO2 /Si substrates. After electrodeposition, pc-CdSe nanowires were thermally annealed at 300 °C x 4 h either with or without exposure to CdCl 2 in methanol a grain growth promoter. The influence of CdCl2 treatment was to increase the mean grain diameter as determined by X-ray diffraction pattern and to convert the crystal structure from cubic to wurtzite. Transfer characteristics showed an increase of the field effect mobility (mu eff) by an order of magnitude and increase of the Ion/I off ratio by a factor of 3-4. Light emitting devices (NW-LED) based on lithographically patterned pc-CdSe nanowire arrays have been investigated. Electroluminescence (EL) spectra of CdSe nanowires under various biases exhibited broad emission spectra centered at 750 nm close to the band gap of CdSe (1.7eV). To enhance the intensity of the emitted light and the external quantum efficiency (EQE), the distance between the contacts were reduced from 5 mum to less than 1 mum which increased the efficiency by an order of magnitude. Also, increasing the annealing temperature of nanowires from 300 °C x4 h to 450 This research project is focused on a new strategy for the creation of nanowire based semiconductor devices. The main goal is to understand

  14. Nanowires and nanobelts, v.2 nanowires and nanobelts of functional materials

    CERN Document Server

    Wang, Zhong Lin

    2010-01-01

    Nanowires, nanobelts, nanoribbons, nanorods ..., are a new class of quasi-one-dimensional materials that have been attracting a great research interest in the last few years. These non-carbon based materials have been demonstrated to exhibit superior electrical, optical, mechanical and thermal properties, and can be used as fundamental building blocks for nano-scale science and technology, ranging from chemical and biological sensors, field effect transistors to logic circuits. Nanocircuits built using semiconductor nanowires demonstrated were declared a ""breakthrough in science"" by Science

  15. A Compact Symmetric Microstrip Filter Based on a Rectangular Meandered-Line Stepped Impedance Resonator with a Triple-Band Bandstop Response

    Directory of Open Access Journals (Sweden)

    Rajendra Dhakal

    2013-01-01

    Full Text Available This paper presents a symmetric-type microstrip triple-band bandstop filter incorporating a tri-section meandered-line stepped impedance resonator (SIR. The length of each section of the meandered line is 0.16, 0.15, and 0.83 times the guided wavelength (λg, so that the filter features three stop bands at 2.59 GHz, 6.88 GHz, and 10.67 GHz, respectively. Two symmetric SIRs are employed with a microstrip transmission line to obtain wide bandwidths of 1.12, 1.34, and 0.89 GHz at the corresponding stop bands. Furthermore, an equivalent circuit model of the proposed filter is developed, and the model matches the electromagnetic simulations well. The return losses of the fabricated filter are measured to be −29.90 dB, −28.29 dB, and −26.66 dB while the insertion losses are 0.40 dB, 0.90 dB, and 1.10 dB at the respective stop bands. A drastic reduction in the size of the filter was achieved by using a simplified architecture based on a meandered-line SIR.

  16. Effect of the nanowire diameter on the linearity of the response of GaN-based heterostructured nanowire photodetectors

    Science.gov (United States)

    Spies, Maria; Polaczyński, Jakub; Ajay, Akhil; Kalita, Dipankar; Luong, Minh Anh; Lähnemann, Jonas; Gayral, Bruno; den Hertog, Martien I.; Monroy, Eva

    2018-06-01

    Nanowire photodetectors are investigated because of their compatibility with flexible electronics, or for the implementation of on-chip optical interconnects. Such devices are characterized by ultrahigh photocurrent gain, but their photoresponse scales sublinearly with the optical power. Here, we present a study of single-nanowire photodetectors displaying a linear response to ultraviolet illumination. Their structure consists of a GaN nanowire incorporating an AlN/GaN/AlN heterostructure, which generates an internal electric field. The activity of the heterostructure is confirmed by the rectifying behavior of the current–voltage characteristics in the dark, as well as by the asymmetry of the photoresponse in magnitude and linearity. Under reverse bias (negative bias on the GaN cap segment), the detectors behave linearly with the impinging optical power when the nanowire diameter is below a certain threshold (≈80 nm), which corresponds to the total depletion of the nanowire stem due to the Fermi level pinning at the sidewalls. In the case of nanowires that are only partially depleted, their nonlinearity is explained by a nonlinear variation of the diameter of their central conducting channel under illumination.

  17. Enhanced sediment loading facilitates point bar growth and accelerates bank erosion along a modelled meander bend on the Sacramento River, USA

    Science.gov (United States)

    Ahmed, J.; Constantine, J. A.; Hales, T. C.

    2017-12-01

    Meandering channels provide a conduit through which sediment and water is routed from the uplands to the sea. Alluvial material is periodically stored and transported through the channel network as permitted by the prevailing hydrologic conditions. The lowlands are typically characterised by accumulations of sediment attached to the inner banks of meander bends (point bars). These bedforms have been identified as important for facilitating a link between in-stream sediment supplies and channel dynamism. A 2D curvilinear hydrodynamic model (MIKE 21C) was used to perform a number of experiments in which the sediment load was adjusted to investigate how changes in alluvial material fluxes affect the development of point bars and the resultant patterns of bank erosion. A doubling of the sediment load caused a longitudinal increase in the bar in the upstream direction and caused a coeval doubling of the transverse channel slope at the meander apex. The upstream growth of the point bar was accompanied by an increase in length over which lateral migration took place at the outer bank. The magnitude of outer bank erosion was 9-times greater for the high-sediment simulation. These results suggest that enhanced sediment loads (potentially the result of changes in land use or climate) can trigger greater rates of bank erosion and channel change through the sequestration of alluvial material on point bars, which encourage high-velocity fluid deflection towards the outer bank of the meander. This controls riparian habitat development and exchanges of sediment and nutrients across the channel-floodplain interface.

  18. Carrier gas effects on aluminum-catalyzed nanowire growth

    International Nuclear Information System (INIS)

    Ke, Yue; Hainey, Mel Jr; Won, Dongjin; Weng, Xiaojun; Eichfeld, Sarah M; Redwing, Joan M

    2016-01-01

    Aluminum-catalyzed silicon nanowire growth under low-pressure chemical vapor deposition conditions requires higher reactor pressures than gold-catalyzed growth, but the reasons for this difference are not well understood. In this study, the effects of reactor pressure and hydrogen partial pressure on silicon nanowire growth using an aluminum catalyst were studied by growing nanowires in hydrogen and hydrogen/nitrogen carrier gas mixtures at different total reactor pressures. Nanowires grown in the nitrogen/hydrogen mixture have faceted catalyst droplet tips, minimal evidence of aluminum diffusion from the tip down the nanowire sidewalls, and significant vapor–solid deposition of silicon on the sidewalls. In comparison, wires grown in pure hydrogen show less well-defined tips, evidence of aluminum diffusion down the nanowire sidewalls at increasing reactor pressures and reduced vapor–solid deposition of silicon on the sidewalls. The results are explained in terms of a model wherein the hydrogen partial pressure plays a critical role in aluminum-catalyzed nanowire growth by controlling hydrogen termination of the silicon nanowire sidewalls. For a given reactor pressure, increased hydrogen partial pressures increase the extent of hydrogen termination of the sidewalls which suppresses SiH_4 adsorption thereby reducing vapor–solid deposition of silicon but increases the surface diffusion length of aluminum. Conversely, lower hydrogen partial pressures reduce the hydrogen termination and also increase the extent of SiH_4 gas phase decomposition, shifting the nanowire growth window to lower growth temperatures and silane partial pressures. (paper)

  19. Electrodeposited highly-ordered manganese oxide nanowire arrays for supercapacitors

    Science.gov (United States)

    Liu, Haifeng; Lu, Bingqiang; Wei, Shuiqiang; Bao, Mi; Wen, Yanxuan; Wang, Fan

    2012-07-01

    Large arrays of well-aligned Mn oxide nanowires were prepared by electrodeposition using anodic aluminum oxide templates. The sizes of nanowires were tuned by varying the electrotype solution involved and the MnO2 nanowires with 10 μm in length were obtained in a neutral KMnO4 bath for 1 h. MnO2 nanowire arrays grown on conductor substance save the tedious electrode-making process, and electrochemical characterization demonstrates that the MnO2 nanowire arrays electrode has good capacitive behavior. Due to the limited mass transportation in narrow spacing, the spacing effects between the neighbor nanowires have show great influence to the electrochemical performance.

  20. Biofunctionalization of zinc oxide nanowires for DNA sensory applications

    Directory of Open Access Journals (Sweden)

    Rudolph Bettina

    2011-01-01

    Full Text Available Abstract We report on the biofunctionalization of zinc oxide nanowires for the attachment of DNA target molecules on the nanowire surface. With the organosilane glycidyloxypropyltrimethoxysilane acting as a bifunctional linker, amino-modified capture molecule oligonucleotides have been immobilized on the nanowire surface. The dye-marked DNA molecules were detected via fluorescence microscopy, and our results reveal a successful attachment of DNA capture molecules onto the nanowire surface. The electrical field effect induced by the negatively charged attached DNA molecules should be able to control the electrical properties of the nanowires and gives way to a ZnO nanowire-based biosensing device.

  1. Morphology Controlled Fabrication of InN Nanowires on Brass Substrates

    Directory of Open Access Journals (Sweden)

    Huijie Li

    2016-10-01

    Full Text Available Growth of semiconductor nanowires on cheap metal substrates could pave the way to the large-scale manufacture of low-cost nanowire-based devices. In this work, we demonstrated that high density InN nanowires can be directly grown on brass substrates by metal-organic chemical vapor deposition. It was found that Zn from the brass substrates is the key factor in the formation of nanowires by restricting the lateral growth of InN. The nanowire morphology is highly dependent on the growth temperature. While at a lower growth temperature, the nanowires and the In droplets have large diameters. At the elevated growth temperature, the lateral sizes of the nanowires and the In droplets are much smaller. Moreover, the nanowire diameter can be controlled in situ by varying the temperature in the growth process. This method is very instructive to the diameter-controlled growth of nanowires of other materials.

  2. Surface enhanced infrared spectroscopy using interacting gold nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Neubrech, Frank; Weber, Daniel; Pucci, Annemarie [Kirchhoff-Institut fuer Physik, Heidelberg (Germany); Shen, Hong [Universite Troyes, Troyes (France); Lamy de la Chapelle, Marc [Universite Paris 13, Bobigny (France)

    2009-07-01

    We performed surface enhanced infrared spectroscopy (SEIRS) of molecules adsorbed on gold nanowires using synchrotron light of the ANKA IR-beamline at the Forschungszentrum Karlsruhe (Germany). Arrays of gold nanowires with interparticle spacings down to 30nm were prepared by electron beam lithography. The interparticle distance was reduced further by wet-chemically increasing the size of the gold nanowires. The growth of the wires was proofed using IR spectroscopy as well as scanning electron microscopy. After this preparation step, appropriate arrays of nanowires with an interparticle distance down to a few nanometers were selected to demonstrate the surface enhanced infrared spectroscopy of one monolayer octadecanthiol (ODT). As know from SEIRS studies using single gold nanowires, the spectral position of the antenna-like resonance in relation to the absorption bands of ODT (2850cm-1 and 2919cm-1) is crucial for both, the lineshape of the molecular vibration and the signal enhancement. In contrast to single nanowires studies, a further increase of the enhanced signals is expected due to the interaction of the electromagnetic fields of the close-by nanowires.

  3. Synthesis and electrical characterization of tungsten oxide nanowires

    Institute of Scientific and Technical Information of China (English)

    Huang Rui; Zhu Jing; Yu Rong

    2009-01-01

    Tungsten oxide nanowires of diameters ranging from 7 to 200 nm are prepared on a tungsten rod substrate by using the chemical vapour deposition (CVD) method with vapour-solid (VS) mechanism. Tin powders are used to control oxygen concentration in the furnace, thereby assisting the growth of the tungsten oxide nanowires. The grown tungsten oxide nanowires are determined to be of crystalline W18O49. Ⅰ-Ⅴ curves are measured by an in situ transmission electron microscope (TEM) to investigate the electrical properties of the nanowires. All of the Ⅰ-Ⅴ curves observed are symmetric, which reveals that the tungsten oxide nanowires are semiconducting. Quantitative analyses of the experimental I V curves by using a metal-semiconductor-metal (MSM) model give some intrinsic parameters of the tungsten oxide nanowires, such as the carrier concentration, the carrier mobility and the conductivity.

  4. Two improvements to the dynamic wake meandering model: including the effects of atmospheric shear on wake turbulence and incorporating turbulence build-up in a row of wind turbines

    DEFF Research Database (Denmark)

    Keck, Rolf-Erik; de Mare, Martin Tobias; Churchfield, Matthew J.

    2015-01-01

    The dynamic wake meandering (DWM) model is an engineering wake model designed to physically model the wake deficit evolution and the unsteady meandering that occurs in wind turbine wakes. The present study aims at improving two features of the model: The effect of the atmospheric boundary layer s...

  5. Semiconductor Nanowires and Nanotubes for Energy Conversion

    Science.gov (United States)

    Fardy, Melissa Anne

    In recent years semiconductor nanowires and nanotubes have garnered increased attention for their unique properties. With their nanoscale dimensions comes high surface area and quantum confinement, promising enhancements in a wide range of applications. 1-dimensional nanostructures are especially attractive for energy conversion applications where photons, phonons, and electrons come into play. Since the bohr exciton radius and phonon and electron mean free paths are on the same length scales as nanowire diameters, optical, thermal, and electrical properties can be tuned by simple nanowire size adjustments. In addition, the high surface area inherent to nanowires and nanotubes lends them towards efficient charge separation and superior catalytic performance. In thermoelectric power generation, the nanoscale wire diameter can effectively scatter phonons, promoting reductions in thermal conductivity and enhancements in the thermoelectric figure of merit. To that end, single-crystalline arrays of PbS, PbSe, and PbTe nanowires have been synthesized by a chemical vapor transport approach. The electrical and thermal transport properties of the nanowires were characterized to investigate their potential as thermoelectric materials. Compared to bulk, the lead chalcogenide nanowires exhibit reduced thermal conductivity below 100 K by up to 3 orders of magnitude, suggesting that they may be promising thermoelectric materials. Smaller diameters and increased surface roughness are expected to give additional enhancements. The solution-phase synthesis of PbSe nanowires via oriented attachment of nanoparticles enables facile surface engineering and diameter control. Branched PbSe nanowires synthesized by this approach showed near degenerately doped charge carrier concentrations. Compared to the bulk, the PbSe nanowires exhibited a similar Seebeck coefficient and a significant reduction in thermal conductivity in the temperature range 20 K to 300 K. Thermal annealing of the Pb

  6. The effects of floodplain soil heterogeneity on meander planform shape

    Science.gov (United States)

    Motta, D.; Abad, J. D.; Langendoen, E. J.; GarcíA, M. H.

    2012-09-01

    Past analytical studies of meander planform development have mostly focused on the complexity of the governing equations, i.e., hydrodynamics, and less so on the stream bank resistance to erosion, whose spatial heterogeneity is difficult to describe deterministically. This motivated the use of a Monte Carlo approach to examine the effects of floodplain soils and their distribution on planform development, with the goal of including bank erosion properties in the analysis. Simulated bank erosion rates are controlled by the resistance to hydraulic erosion of the bank soils using an excess shear stress approach. The spatial distribution of critical shear stress across the floodplain is delineated on a rectangular, equidistant grid with varying degrees of variability. The corresponding erodibility coefficient is computed using a field-derived empirical relation. For a randomly disturbed distribution, in which the mean resistance to erosion exponentially increases away from the valley centerline, two relevant parameters are identified: the standard deviation of the critical shear stress distribution, which controls skewness and variability of the channel centerline, and the cross-valley increase in soil resistance, which constrains lateral migration and also affects bend skewness. For a purely random distribution, migrated centerlines exhibit larger variability for increasing spatial scales of floodplain soil heterogeneity. For equal stochastic variability of the corresponding governing parameters, relating meander migration to hydraulic erosion of the bank soils produces more variability and shape complexity than the "classic" bank migration approach of Ikeda et al. (1981), which relates migration rate to excess velocity at the outer bank. Finally, the proposed stochastic approach provides a foundation for estimating a suitable spatial density of measurements to characterize the physical properties of floodplain soils and vegetation.

  7. Rare earth silicide nanowires on silicon surfaces

    International Nuclear Information System (INIS)

    Wanke, Martina

    2008-01-01

    The growth, structure and electronic properties of rare earth silicide nanowires are investigated on planar and vicinal Si(001) und Si(111) surfaces with scanning tunneling microscopy (STM), low energy electron diffraction (LEED) and angle-resolved photoelectron spectroscopy (ARPES). On all surfaces investigated within this work hexagonal disilicides are grown epitaxially with a lattice mismatch of -2.55% up to +0.83% along the hexagonal a-axis. Along the hexagonal c-axis the lattice mismatch is essentially larger with 6.5%. On the Si(001)2 x 1 surface two types of nanowires are grown epitaxially. The socalled broad wires show a one-dimensional metallic valence band structure with states crossing the Fermi level. Along the nanowires two strongly dispersing states at the anti J point and a strongly dispersing state at the anti Γ point can be observed. Along the thin nanowires dispersing states could not be observed. Merely in the direction perpendicular to the wires an intensity variation could be observed, which corresponds to the observed spacial structure of the thin nanowires. The electronic properties of the broad erbium silicide nanowires are very similar to the broad dysprosium silicide nanowires. The electronic properties of the DySi 2 -monolayer and the Dy 3 Si 5 -multilayer on the Si(111) surface are investigated in comparison to the known ErSi 2 /Si(111) and Er 3 Si 5 /Si(111) system. The positions and the energetic locations of the observed band in the surface Brillouin zone will be confirmed for dysprosium. The shape of the electron pockets in the vector k parallel space is elliptical at the anti M points, while the hole pocket at the anti Γ point is showing a hexagonal symmetry. On the Si(557) surface the structural and electronic properties depend strongly on the different preparation conditions likewise, in particular on the rare earth coverage. At submonolayer coverage the thin nanowires grow in wide areas of the sample surface, which are oriented

  8. As-Grown Gallium Nitride Nanowire Electromechanical Resonators

    Science.gov (United States)

    Montague, Joshua R.

    Technological development in recent years has led to a ubiquity of micro- and nano-scale electromechanical devices. Sensors for monitoring temperature, pressure, mass, etc., are now found in nearly all electronic devices at both the industrial and consumer levels. As has been true for integrated circuit electronics, these electromechanical devices have continued to be scaled down in size. For many nanometer-scale structures with large surface-to-volume ratio, dissipation (energy loss) becomes prohibitively large causing a decreasing sensitivity with decreasing sensor size. In this work, gallium nitride (GaN) nanowires are investigated as singly-clamped (cantilever) mechanical resonators with typical mechanical quality factors, Q (equal to the ratio of resonance frequency to peak full-width-at-half-maximum-power) and resonance frequencies, respectively, at or above 30,000, and near 1 MHz. These Q values---in vacuum at room temperature---indicate very low levels of dissipation; they are essentially the same as those for bulk quartz crystal resonators that form the basis of simple clocks and mass sensors. The GaN nanowires have lengths and diameters, respectively, of approximately 15 micrometers and hundreds of nanometers. As-grown GaN nanowire Q values are larger than other similarly-sized, bottom-up, cantilever resonators and this property makes them very attractive for use as resonant sensors. We demonstrate the capability of detecting sub-monolayer levels of atomic layer deposited (ALD) films, and the robust nature of the GaN nanowires structure that allows for their 'reuse' after removal of such layers. In addition to electron microscope-based measurement techniques, we demonstrate the successful capacitive detection of a single nanowire using microwave homodyne reflectometry. This technique is then extended to allow for simultaneous measurements of large ensembles of GaN nanowires on a single sample, providing statistical information about the distribution of

  9. Self-Assembled PbSe Nanowire:Perovskite Hybrids

    KAUST Repository

    Yang, Zhenyu

    2015-12-02

    © 2015 American Chemical Society. Inorganic semiconductor nanowires are of interest in nano- and microscale photonic and electronic applications. Here we report the formation of PbSe nanowires based on directional quantum dot alignment and fusion regulated by hybrid organic-inorganic perovskite surface ligands. All material synthesis is carried out at mild temperatures. Passivation of PbSe quantum dots was achieved via a new perovskite ligand exchange. Subsequent in situ ammonium/amine substitution by butylamine enables quantum dots to be capped by butylammonium lead iodide, and this further drives the formation of a PbSe nanowire superlattice in a two-dimensional (2D) perovskite matrix. The average spacing between two adjacent nanowires agrees well with the thickness of single atomic layer of 2D perovskite, consistent with the formation of a new self-assembled semiconductor nanowire:perovskite heterocrystal hybrid.

  10. Self-Assembled PbSe Nanowire:Perovskite Hybrids

    KAUST Repository

    Yang, Zhenyu; Yassitepe, Emre; Voznyy, Oleksandr; Janmohamed, Alyf; Lan, Xinzheng; Levina, Larissa; Comin, Riccardo; Sargent, Edward H.

    2015-01-01

    © 2015 American Chemical Society. Inorganic semiconductor nanowires are of interest in nano- and microscale photonic and electronic applications. Here we report the formation of PbSe nanowires based on directional quantum dot alignment and fusion regulated by hybrid organic-inorganic perovskite surface ligands. All material synthesis is carried out at mild temperatures. Passivation of PbSe quantum dots was achieved via a new perovskite ligand exchange. Subsequent in situ ammonium/amine substitution by butylamine enables quantum dots to be capped by butylammonium lead iodide, and this further drives the formation of a PbSe nanowire superlattice in a two-dimensional (2D) perovskite matrix. The average spacing between two adjacent nanowires agrees well with the thickness of single atomic layer of 2D perovskite, consistent with the formation of a new self-assembled semiconductor nanowire:perovskite heterocrystal hybrid.

  11. Guiding modes of semi-infinite nanowire and their dispersion character

    International Nuclear Information System (INIS)

    Sun, Yuming; Su, Yuehua; Dai, Zhenhong; Wang, Weitian

    2014-01-01

    Conventionally, the optical properties of finite semiconductor nanowires have been understood and explained in terms of an infinite nanowire. This work describes completely different photonic modes for a semi-finite nanowire based on a rigorous theoretical method, and the implications for the finite one. First, the special eigenvalue problem charactered by the end results in a distinctive mode spectrum for the semi-infinite dielectric nanowire. Meanwhile, the results show hybrid degenerate modes away from cutoff frequency, and transverse electric–transverse magnetic (TE–TM) degeneracy. Second, accompanying a different mode spectrum, a semi-finite nanowire also shows a distinctive dispersion relation compared to an infinite nanowire. Taking a semi-infinite, ZnO nanowire as an example, we find that the ℏω−k z space is not continuous in the interested photon energy window, implying that there is no uniform polariton dispersion relation for semi-infinite nanowire. Our method is shown correct through a field-reconstruction for a thin ZnO nanowire (55 nm in radius) and position determination of FP modes for a ZnO nanowire (200 nm in diameter). The results are of great significance to correctly understand the guiding and lasing mechanisms of semiconductor nanowires. (paper)

  12. Catalyst-free, III-V nanowire photovoltaics

    Science.gov (United States)

    Davies, D. G.; Lambert, N.; Fry, P. W.; Foster, A.; Krysa, A. B.; Wilson, L. R.

    2014-05-01

    We report on room temperature, photovoltaic operation of catalyst-free GaAs p-i-n junction nanowire arrays. Growth studies were first performed to determine the optimum conditions for controlling the vertical and lateral growth of the nanowires. Following this, devices consisting of axial p-i-n junctions were fabricated by planarising the nanowire arrays with a hard baked polymer. We discuss the photovoltaic properties of this proof-of-concept device, and significant improvements to be made during the growth.

  13. On the thermomechanical deformation of silver shape memory nanowires

    International Nuclear Information System (INIS)

    Park, Harold S.; Ji, Changjiang

    2006-01-01

    We present an analysis of the uniaxial thermomechanical deformation of single-crystal silver shape memory nanowires using atomistic simulations. We first demonstrate that silver nanowires can show both shape memory and pseudoelastic behavior, then perform uniaxial tensile loading of the shape memory nanowires at various deformation temperatures, strain rates and heat transfer conditions. The simulations show that the resulting mechanical response of the shape memory nanowires depends strongly upon the temperature during deformation, and can be fundamentally different from that observed in bulk polycrystalline shape memory alloys. The energy and temperature signatures of uniaxially loaded silver shape memory nanowires are correlated to the observed nanowire deformation, and are further discussed in comparison to bulk polycrystalline shape memory alloy behavior

  14. Numerical Estimation of the Outer Bank Resistance Characteristics in AN Evolving Meandering River

    Science.gov (United States)

    Wang, D.; Konsoer, K. M.; Rhoads, B. L.; Garcia, M. H.; Best, J.

    2017-12-01

    Few studies have examined the three-dimensional flow structure and its interaction with bed morphology within elongate loops of large meandering rivers. The present study uses a numerical model to simulate the flow pattern and sediment transport, especially the flow close to the outer-bank, at two elongate meandering loops in Wabash River, USA. The numerical grid for the model is based on a combination of airborne LIDAR data on floodplains and the multibeam data within the river channel. A Finite Element Method (FEM) is used to solve the non-hydrostatic RANS equation using a K-epsilon turbulence closure scheme. High-resolution topographic data allows detailed numerical simulation of flow patterns along the outer bank and model calibration involves comparing simulated velocities to ADCP measurements at 41 cross sections near this bank. Results indicate that flow along the outer bank is strongly influenced by large resistance elements, including woody debris, large erosional scallops within the bank face, and outcropping bedrock. In general, patterns of bank migration conform with zones of high near-bank velocity and shear stress. Using the existing model, different virtual events can be simulated to explore the impacts of different resistance characteristics on patterns of flow, sediment transport, and bank erosion.

  15. Aluminum-catalyzed silicon nanowires: Growth methods, properties, and applications

    Energy Technology Data Exchange (ETDEWEB)

    Hainey, Mel F.; Redwing, Joan M. [Department of Materials Science and Engineering, Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

    2016-12-15

    Metal-mediated vapor-liquid-solid (VLS) growth is a promising approach for the fabrication of silicon nanowires, although residual metal incorporation into the nanowires during growth can adversely impact electronic properties particularly when metals such as gold and copper are utilized. Aluminum, which acts as a shallow acceptor in silicon, is therefore of significant interest for the growth of p-type silicon nanowires but has presented challenges due to its propensity for oxidation. This paper summarizes the key aspects of aluminum-catalyzed nanowire growth along with wire properties and device results. In the first section, aluminum-catalyzed nanowire growth is discussed with a specific emphasis on methods to mitigate aluminum oxide formation. Next, the influence of growth parameters such as growth temperature, precursor partial pressure, and hydrogen partial pressure on nanowire morphology is discussed, followed by a brief review of the growth of templated and patterned arrays of nanowires. Aluminum incorporation into the nanowires is then discussed in detail, including measurements of the aluminum concentration within wires using atom probe tomography and assessment of electrical properties by four point resistance measurements. Finally, the use of aluminum-catalyzed VLS growth for device fabrication is reviewed including results on single-wire radial p-n junction solar cells and planar solar cells fabricated with nanowire/nanopyramid texturing.

  16. Flexible integration of free-standing nanowires into silicon photonics.

    Science.gov (United States)

    Chen, Bigeng; Wu, Hao; Xin, Chenguang; Dai, Daoxin; Tong, Limin

    2017-06-14

    Silicon photonics has been developed successfully with a top-down fabrication technique to enable large-scale photonic integrated circuits with high reproducibility, but is limited intrinsically by the material capability for active or nonlinear applications. On the other hand, free-standing nanowires synthesized via a bottom-up growth present great material diversity and structural uniformity, but precisely assembling free-standing nanowires for on-demand photonic functionality remains a great challenge. Here we report hybrid integration of free-standing nanowires into silicon photonics with high flexibility by coupling free-standing nanowires onto target silicon waveguides that are simultaneously used for precise positioning. Coupling efficiency between a free-standing nanowire and a silicon waveguide is up to ~97% in the telecommunication band. A hybrid nonlinear-free-standing nanowires-silicon waveguides Mach-Zehnder interferometer and a racetrack resonator for significantly enhanced optical modulation are experimentally demonstrated, as well as hybrid active-free-standing nanowires-silicon waveguides circuits for light generation. These results suggest an alternative approach to flexible multifunctional on-chip nanophotonic devices.Precisely assembling free-standing nanowires for on-demand photonic functionality remains a challenge. Here, Chen et al. integrate free-standing nanowires into silicon waveguides and show all-optical modulation and light generation on silicon photonic chips.

  17. Tunable magnetic nanowires for biomedical and harsh environment applications

    KAUST Repository

    Ivanov, Yurii P.; Alfadhel, Ahmed; Al-Nassar, Mohammed Y.; Perez, Jose E.; Vazquez, Manuel; Chuvilin, Andrey; Kosel, Jü rgen

    2016-01-01

    We have synthesized nanowires with an iron core and an iron oxide (magnetite) shell by a facile low-cost fabrication process. The magnetic properties of the nanowires can be tuned by changing shell thicknesses to yield remarkable new properties and multi-functionality. A multi-domain state at remanence can be obtained, which is an attractive feature for biomedical applications, where a low remanence is desirable. The nanowires can also be encoded with different remanence values. Notably, the oxidation process of single-crystal iron nanowires halts at a shell thickness of 10 nm. The oxide shell of these nanowires acts as a passivation layer, retaining the magnetic properties of the iron core even during high-temperature operations. This property renders these core-shell nanowires attractive materials for application to harsh environments. A cell viability study reveals a high degree of biocompatibility of the core-shell nanowires.

  18. Multi-spectral optical absorption in substrate-free nanowire arrays

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Junpeng; Chia, Andrew; Boulanger, Jonathan; LaPierre, Ray, E-mail: lapierr@mcmaster.ca [Department of Engineering Physics, McMaster University, 1280 Main St. West, Hamilton, Ontario L8S 4L7 (Canada); Dhindsa, Navneet; Khodadad, Iman; Saini, Simarjeet [Department of Electrical and Computer Engineering, University of Waterloo, 200 University Ave West, Waterloo, Ontario N2L 3G1 (Canada); Waterloo Institute of Nanotechnology, University of Waterloo, 200 University Ave West, Waterloo, Ontario N2L 3G1 (Canada)

    2014-09-22

    A method is presented of fabricating gallium arsenide (GaAs) nanowire arrays of controlled diameter and period by reactive ion etching of a GaAs substrate containing an indium gallium arsenide (InGaP) etch stop layer, allowing the precise nanowire length to be controlled. The substrate is subsequently removed by selective etching, using the same InGaP etch stop layer, to create a substrate-free GaAs nanowire array. The optical absorptance of the nanowire array was then directly measured without absorption from a substrate. We directly observe absorptance spectra that can be tuned by the nanowire diameter, as explained with rigorous coupled wave analysis. These results illustrate strong optical absorption suitable for nanowire-based solar cells and multi-spectral absorption for wavelength discriminating photodetectors. The solar-weighted absorptance above the bandgap of GaAs was 94% for a nanowire surface coverage of only 15%.

  19. Tunable magnetic nanowires for biomedical and harsh environment applications

    KAUST Repository

    Ivanov, Yurii P.

    2016-04-13

    We have synthesized nanowires with an iron core and an iron oxide (magnetite) shell by a facile low-cost fabrication process. The magnetic properties of the nanowires can be tuned by changing shell thicknesses to yield remarkable new properties and multi-functionality. A multi-domain state at remanence can be obtained, which is an attractive feature for biomedical applications, where a low remanence is desirable. The nanowires can also be encoded with different remanence values. Notably, the oxidation process of single-crystal iron nanowires halts at a shell thickness of 10 nm. The oxide shell of these nanowires acts as a passivation layer, retaining the magnetic properties of the iron core even during high-temperature operations. This property renders these core-shell nanowires attractive materials for application to harsh environments. A cell viability study reveals a high degree of biocompatibility of the core-shell nanowires.

  20. Orientation-controlled synthesis and magnetism of single crystalline Co nanowires

    International Nuclear Information System (INIS)

    Huang, Gui-Fang; Huang, Wei-Qing; Wang, Ling-Ling; Zou, B.S.; Pan, Anlian

    2012-01-01

    Orientation control and the magnetic properties of single crystalline Co nanowires fabricated by electrodeposition have been systematically investigated. It is found that the orientation of Co nanowires can be effectively controlled by varying either the current density or the pore diameter of AAO templates. Lower current density or small diameter is favorable for forming the (1 0 0) texture, while higher current values or larger diameter leads to the emergence and enhancement of (1 1 0) texture of Co nanowires. The mechanism for the manipulated growth characterization is discussed in detail. The orientation of Co nanowires has a significant influence on the magnetic properties, resulting from the competition between the magneto-crystalline and shape anisotropy of Co nanowires. This work offers a simple method to manipulate the orientation and magnetic properties of nanowires for future applications. - Highlights: ► Single crystalline Co nanowires have successfully been grown by DC electrodeposition. ► Orientation controlling and its effect on magnetism of Co nanowires were investigated. ► The orientation of Co nanowires can be effectively controlled by varying current density. ► The crystalline orientation of Co nanowires has significant influence on the magnetic properties.

  1. Piezoresistance of top-down suspended Si nanowires

    International Nuclear Information System (INIS)

    Koumela, A; Mercier, D; Dupre, C; Jourdan, G; Marcoux, C; Ollier, E; Duraffourg, L; Purcell, S T

    2011-01-01

    Measurements of the gauge factor of suspended, top-down silicon nanowires are presented. The nanowires are fabricated with a CMOS compatible process and with doping concentrations ranging from 2 x 10 20 down to 5 x 10 17 cm -3 . The extracted gauge factors are compared with results on identical non-suspended nanowires and with state-of-the-art results. An increase of the gauge factor after suspension is demonstrated. For the low doped nanowires a value of 235 is measured. Particular attention was paid throughout the experiments to distinguishing real resistance change due to strain modulation from resistance fluctuations due to charge trapping. Furthermore, a numerical model correlating surface charge density with the gauge factor is presented. Comparison of the simulations with experimental measurements shows the validity of this approach. These results contribute to a deeper understanding of the piezoresistive effect in Si nanowires.

  2. Preparation and Characterization of Tin Oxide Nanowires

    Directory of Open Access Journals (Sweden)

    A. Kabiri

    2013-12-01

    Full Text Available The aim of this research is preparation of SnO2 nanowires by means of Thermal chemical reaction vapor transport deposition (TCRVTD method from SnO powders. The morphology, chemical composition and microstructure properties of the nanowires are characterized using field emission scanning electron microscope (FE-SEM, EDS, and XRD. The XRD diffraction patterns reveal that the SnO2 nanowires have been grown in the form of tetragonal crystal structures with the lattice parameter of a=b=0.440 nm, and c=0.370 nm. The SEM images reveal that SnO2 nanowires have successfully been grown on the Si substrate. The EDS patterns show that only elements of Sn, O and Au are detected. Prior to the VLS process the substrate is coated by a thin layer of Au. The diameter of nanowires is measured to be something between 20-100 nm.

  3. Nanowires: properties, applications and synthesis via porous anodic ...

    Indian Academy of Sciences (India)

    Moreover, periodic arrays of magnetic nanowires hold high potential for recording media application. Nanowires are also potential candidates for sensor and bio-medical applications. In the present article, the physical and chemical properties of nanowires along with their probable applications in different fields have been ...

  4. Corrosion detection of nanowires by magnetic sensors

    KAUST Repository

    Kosel, Jü rgen; Amara, Selma; Ivanov, Iurii; Blanco, Mario

    2017-01-01

    Disclosed are various embodiments related to a corrosion detection device for detecting corrosive environments. A corrosion detection device comprises a magnetic sensor and at least one magnetic nanowire disposed on the magnetic sensor. The magnetic sensor is configured to detect corrosion of the one or more magnetic nanowires based at least in part on a magnetic field of the one or more magnetic nanowires.

  5. Corrosion detection of nanowires by magnetic sensors

    KAUST Repository

    Kosel, Jürgen

    2017-10-05

    Disclosed are various embodiments related to a corrosion detection device for detecting corrosive environments. A corrosion detection device comprises a magnetic sensor and at least one magnetic nanowire disposed on the magnetic sensor. The magnetic sensor is configured to detect corrosion of the one or more magnetic nanowires based at least in part on a magnetic field of the one or more magnetic nanowires.

  6. A superconducting nanowire can be modeled by using SPICE

    Science.gov (United States)

    Berggren, Karl K.; Zhao, Qing-Yuan; Abebe, Nathnael; Chen, Minjie; Ravindran, Prasana; McCaughan, Adam; Bardin, Joseph C.

    2018-05-01

    Modeling of superconducting nanowire single-photon detectors typically requires custom simulations or finite-element analysis in one or two dimensions. Here, we demonstrate two simplified one-dimensional SPICE models of a superconducting nanowire that can quickly and efficiently describe the electrical characteristics of a superconducting nanowire. These models may be of particular use in understanding alternative architectures for nanowire detectors and readouts.

  7. Magnetic phase shift reconstruction for uniformly magnetized nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Akhtari-Zavareh, Azadeh [Department of Physics, Simon Fraser University, Burnaby, British Columbia (Canada); De Graef, Marc [Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA (United States); Kavanagh, Karen L. [Department of Physics, Simon Fraser University, Burnaby, British Columbia (Canada)

    2017-01-15

    A new analytical model is developed for the magnetic phase shift of uniformly magnetized nanowires with ideal cylindrical geometry. The model is applied to experimental data from off-axis electron holography measurements of the phase shift of CoFeB nanowires, and the saturation induction of a selected wire, as well as its radius, aspect ratio, position and orientation, is determined by fitting the model parameters. The saturation induction value of 1.7 T of the CoFeB nanowire is found to be similar, to be within the measurement error, to values reported in the literature. - Highlights: • We describe a mathematical model for the magnetic phase shift of a cylindrical nanowire. • We discuss electron holography experiments on magnetic nanowires. • We obtain an accurate fit of the measured magnetic phase shift profile. • We extract the magnetic induction of the nanowire from the phase shift model. • The magnetic induction of 1.7 T agrees well with literature results.

  8. A shortcut hydrothermal strategy for the synthesis of zinc nanowires

    International Nuclear Information System (INIS)

    Hu Jianqiang; Chen Zhiwu; Xie Jingsi; Yu Ying

    2008-01-01

    Synthesis of metal nanowires has opened many new possibilities for designing ideal building blocks for future nanodevices. In this work, zinc nanowires with lengths of micrometre magnitude were synthesized in high yield by a shortcut hydrothermal strategy. The synthesis involves a template-free, non-seed and catalyst-free solution-phase process to high-quality zinc nanowires, which is low-cost and proceeds at relatively short time. In this process, zinc nanowires were prepared through the reduction of zinc acetate with absolute ethanol in the presence of silver nitrate under hydrothermal atmosphere. The strategy suggests that silver ion plays a vital role in the synthesis of zinc nanowires, without which the substituted product is zinc oxide nanowires. X-ray diffraction and energy-dispersive x-ray spectroscopy measurements confirm the final formation of zinc nanowires and component transformation from zinc oxide nanowires in the introduction of silver ion. We believe that with the efficient synthesis, longer zinc nanowires can be fabricated and may find potential applications for superconductors and nanodevices. (fast track communication)

  9. Rare earth silicide nanowires on silicon surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Wanke, Martina

    2008-11-10

    The growth, structure and electronic properties of rare earth silicide nanowires are investigated on planar and vicinal Si(001) und Si(111) surfaces with scanning tunneling microscopy (STM), low energy electron diffraction (LEED) and angle-resolved photoelectron spectroscopy (ARPES). On all surfaces investigated within this work hexagonal disilicides are grown epitaxially with a lattice mismatch of -2.55% up to +0.83% along the hexagonal a-axis. Along the hexagonal c-axis the lattice mismatch is essentially larger with 6.5%. On the Si(001)2 x 1 surface two types of nanowires are grown epitaxially. The socalled broad wires show a one-dimensional metallic valence band structure with states crossing the Fermi level. Along the nanowires two strongly dispersing states at the anti J point and a strongly dispersing state at the anti {gamma} point can be observed. Along the thin nanowires dispersing states could not be observed. Merely in the direction perpendicular to the wires an intensity variation could be observed, which corresponds to the observed spacial structure of the thin nanowires. The electronic properties of the broad erbium silicide nanowires are very similar to the broad dysprosium silicide nanowires. The electronic properties of the DySi{sub 2}-monolayer and the Dy{sub 3}Si{sub 5}-multilayer on the Si(111) surface are investigated in comparison to the known ErSi{sub 2}/Si(111) and Er{sub 3}Si{sub 5}/Si(111) system. The positions and the energetic locations of the observed band in the surface Brillouin zone will be confirmed for dysprosium. The shape of the electron pockets in the (vector)k {sub parallel} space is elliptical at the anti M points, while the hole pocket at the anti {gamma} point is showing a hexagonal symmetry. On the Si(557) surface the structural and electronic properties depend strongly on the different preparation conditions likewise, in particular on the rare earth coverage. At submonolayer coverage the thin nanowires grow in wide areas

  10. Additional compound semiconductor nanowires for photonics

    Science.gov (United States)

    Ishikawa, F.

    2016-02-01

    GaAs related compound semiconductor heterostructures are one of the most developed materials for photonics. Those have realized various photonic devices with high efficiency, e. g., lasers, electro-optical modulators, and solar cells. To extend the functions of the materials system, diluted nitride and bismide has been paid attention over the past decade. They can largely decrease the band gap of the alloys, providing the greater tunability of band gap and strain status, eventually suppressing the non-radiative Auger recombinations. On the other hand, selective oxidation for AlGaAs is a vital technique for vertical surface emitting lasers. That enables precisely controlled oxides in the system, enabling the optical and electrical confinement, heat transfer, and mechanical robustness. We introduce the above functions into GaAs nanowires. GaAs/GaAsN core-shell nanowires showed clear redshift of the emitting wavelength toward infrared regime. Further, the introduction of N elongated the carrier lifetime at room temperature indicating the passivation of non-radiative surface recombinations. GaAs/GaAsBi nanowire shows the redshift with metamorphic surface morphology. Selective and whole oxidations of GaAs/AlGaAs core-shell nanowires produce semiconductor/oxide composite GaAs/AlGaOx and oxide GaOx/AlGaOx core-shell nanowires, respectively. Possibly sourced from nano-particle species, the oxide shell shows white luminescence. Those property should extend the functions of the nanowires for their application to photonics.

  11. Nano-soldering of magnetically aligned three-dimensional nanowire networks

    International Nuclear Information System (INIS)

    Gao Fan; Gu Zhiyong

    2010-01-01

    It is extremely challenging to fabricate 3D integrated nanostructures and hybrid nanoelectronic devices. In this paper, we report a simple and efficient method to simultaneously assemble and solder nanowires into ordered 3D and electrically conductive nanowire networks. Nano-solders such as tin were fabricated onto both ends of multi-segmented nanowires by a template-assisted electrodeposition method. These nanowires were then self-assembled and soldered into large-scale 3D network structures by magnetic field assisted assembly in a liquid medium with a high boiling point. The formation of junctions/interconnects between the nanowires and the scale of the assembly were dependent on the solder reflow temperature and the strength of the magnetic field. The size of the assembled nanowire networks ranged from tens of microns to millimeters. The electrical characteristics of the 3D nanowire networks were measured by regular current-voltage (I-V) measurements using a probe station with micropositioners. Nano-solders, when combined with assembling techniques, can be used to efficiently connect and join nanowires with low contact resistance, which are very well suited for sensor integration as well as nanoelectronic device fabrication.

  12. Nanowire Electrodes for Advanced Lithium Batteries

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Lei; Wei, Qiulong; Sun, Ruimin; Mai, Liqiang, E-mail: mlq518@whut.edu.cn [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, WUT-Harvard Joint Nano Key Laboratory, Wuhan University of Technology, Wuhan (China)

    2014-10-27

    Since the commercialization of lithium ion batteries (LIBs) in the past two decades, rechargeable LIBs have become widespread power sources for portable devices used in daily life. However, current demands require higher energy density and power density of batteries. The electrochemical energy storage performance of LIBs could be improved by applying nanomaterial electrodes, but their fast capacity fading is still one of the key limitations and the mechanism need to be clearly understood. Single nanowire electrode devices are considered as a versatile platform for in situ probing the direct relationship between electrical transport, structure change, and other properties of the single nanowire electrode along with the charge/discharge process. The results indicate that the conductivity decrease of the nanowire electrode and the structural disorder/destruction during electrochemical reaction limit the cycling performance of LIBs. Based on the in situ observations, some feasible optimization strategies, including prelithiation, coaxial structure, nanowire arrays, and hierarchical structure architecture, are proposed and utilized to restrain the conductivity decrease and structural disorder/destruction. Further, the applications of nanowire electrodes in some “beyond Li-ion” batteries, such as Li-S and Li-air batteries are also described.

  13. Nanowire Electrodes for Advanced Lithium Batteries

    Directory of Open Access Journals (Sweden)

    Lei eHuang

    2014-10-01

    Full Text Available Since the commercialization of lithium ion batteries (LIBs in the past two decades, rechargeable LIBs have become widespread power sources for portable devices used in daily life. However, current demands require higher energy density and power density of batteries. The electrochemical energy storage performance of LIBs could be improved by applying nanomaterial electrodes, but their fast capacity fading is still one of the key limitations and the mechanism needs to be clearly understood. Single nanowire electrode devices are considered as a versatile platform for in situ probing the direct relationship between electrical transport, structure change, and other properties of the single nanowire electrode along with the charge/discharge process. The results indicate the conductivity decrease of the nanowire electrode and the structural disorder/destruction during electrochemical reactions which limit the cycling performance of LIBs. Based on the in situ observations, some feasible structure architecture strategies, including prelithiation, coaxial structure, nanowire arrays and hierarchical structure architecture, are proposed and utilized to restrain the conductivity decrease and structural disorder/destruction. Further, the applications of nanowire electrodes in some beyond Li-ion batteries, such as Li-S and Li-air battery, are also described.

  14. Nanowire Electrodes for Advanced Lithium Batteries

    International Nuclear Information System (INIS)

    Huang, Lei; Wei, Qiulong; Sun, Ruimin; Mai, Liqiang

    2014-01-01

    Since the commercialization of lithium ion batteries (LIBs) in the past two decades, rechargeable LIBs have become widespread power sources for portable devices used in daily life. However, current demands require higher energy density and power density of batteries. The electrochemical energy storage performance of LIBs could be improved by applying nanomaterial electrodes, but their fast capacity fading is still one of the key limitations and the mechanism need to be clearly understood. Single nanowire electrode devices are considered as a versatile platform for in situ probing the direct relationship between electrical transport, structure change, and other properties of the single nanowire electrode along with the charge/discharge process. The results indicate that the conductivity decrease of the nanowire electrode and the structural disorder/destruction during electrochemical reaction limit the cycling performance of LIBs. Based on the in situ observations, some feasible optimization strategies, including prelithiation, coaxial structure, nanowire arrays, and hierarchical structure architecture, are proposed and utilized to restrain the conductivity decrease and structural disorder/destruction. Further, the applications of nanowire electrodes in some “beyond Li-ion” batteries, such as Li-S and Li-air batteries are also described.

  15. Position-controlled epitaxial III-V nanowires on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Roest, Aarnoud L; Verheijen, Marcel A; Wunnicke, Olaf; Serafin, Stacey; Wondergem, Harry; Bakkers, Erik P A M [Philips Research Laboratories, Professor Holstlaan 4, 5656 AA Eindhoven (Netherlands); Kavli Institute of NanoScience, Delft University of Technology, PO Box 5046, 2600 GA Delft (Netherlands)

    2006-06-14

    We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction pole figures and cross-sectional transmission electron microscopy. We show preliminary results of two-terminal electrical measurements of III-V nanowires grown on silicon. E-beam lithography was used to predefine the position of the nanowires.

  16. Position-controlled epitaxial III-V nanowires on silicon

    International Nuclear Information System (INIS)

    Roest, Aarnoud L; Verheijen, Marcel A; Wunnicke, Olaf; Serafin, Stacey; Wondergem, Harry; Bakkers, Erik P A M

    2006-01-01

    We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction pole figures and cross-sectional transmission electron microscopy. We show preliminary results of two-terminal electrical measurements of III-V nanowires grown on silicon. E-beam lithography was used to predefine the position of the nanowires

  17. AC surface photovoltage of indium phosphide nanowire networks

    Energy Technology Data Exchange (ETDEWEB)

    Lohn, Andrew J.; Kobayashi, Nobuhiko P. [California Univ., Santa Cruz, CA (United States). Baskin School of Engineering; California Univ., Santa Cruz, CA (US). Nanostructured Energy Conversion Technology and Research (NECTAR); NASA Ames Research Center, Moffett Field, CA (United States). Advanced Studies Laboratories

    2012-06-15

    Surface photovoltage is used to study the dynamics of photogenerated carriers which are transported through a highly interconnected three-dimensional network of indium phosphide nanowires. Through the nanowire network charge transport is possible over distances far in excess of the nanowire lengths. Surface photovoltage was measured within a region 10.5-14.5 mm from the focus of the illumination, which was chopped at a range of frequencies from 15 Hz to 30 kHz. Carrier dynamics were modeled by approximating the nanowire network as a thin film, then fitted to experiment suggesting diffusion of electrons and holes at approximately 75% of the bulk value in InP but with significantly reduced built-in fields, presumably due to screening by nanowire surfaces. (orig.)

  18. Biotemplated synthesis of PZT nanowires.

    Science.gov (United States)

    Cung, Kellye; Han, Booyeon J; Nguyen, Thanh D; Mao, Sheng; Yeh, Yao-Wen; Xu, Shiyou; Naik, Rajesh R; Poirier, Gerald; Yao, Nan; Purohit, Prashant K; McAlpine, Michael C

    2013-01-01

    Piezoelectric nanowires are an important class of smart materials for next-generation applications including energy harvesting, robotic actuation, and bioMEMS. Lead zirconate titanate (PZT), in particular, has attracted significant attention, owing to its superior electromechanical conversion performance. Yet, the ability to synthesize crystalline PZT nanowires with well-controlled properties remains a challenge. Applications of common nanosynthesis methods to PZT are hampered by issues such as slow kinetics, lack of suitable catalysts, and harsh reaction conditions. Here we report a versatile biomimetic method, in which biotemplates are used to define PZT nanostructures, allowing for rational control over composition and crystallinity. Specifically, stoichiometric PZT nanowires were synthesized using both polysaccharide (alginate) and bacteriophage templates. The wires possessed measured piezoelectric constants of up to 132 pm/V after poling, among the highest reported for PZT nanomaterials. Further, integrated devices can generate up to 0.820 μW/cm(2) of power. These results suggest that biotemplated piezoelectric nanowires are attractive candidates for stimuli-responsive nanosensors, adaptive nanoactuators, and nanoscale energy harvesters.

  19. Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors

    International Nuclear Information System (INIS)

    Zuo, Daniel; Liu, Runyu; Wasserman, Daniel; Mabon, James; He, Zhao-Yu; Liu, Shi; Zhang, Yong-Hang; Kadlec, Emil A.; Olson, Benjamin V.; Shaner, Eric A.

    2015-01-01

    We present an extensive characterization of the minority carrier transport properties in an nBn mid-wave infrared detector incorporating a Ga-free InAs/InAsSb type-II superlattice as the absorbing region. Using a modified electron beam induced current technique in conjunction with time-resolved photoluminescence, we were able to determine several important transport parameters of the absorber region in the device, which uses a barrier layer to reduce dark current. For a device at liquid He temperatures, we report a minority carrier diffusion length of 750 nm and a minority carrier lifetime of 200 ns, with a vertical diffusivity of 3 × 10 −2  cm 2 /s. We also report on the device's optical response characteristics at 78 K

  20. Semiconductor Nanowires: What's Next?

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Peidong; Yan, Ruoxue; Fardy, Melissa

    2010-04-28

    In this perspective, we take a critical look at the research progress within the nanowire community for the past decade. We discuss issues on the discovery of fundamentally new phenomena versus performance benchmarking for many of the nanowire applications. We also notice that both the bottom-up and top-down approaches have played important roles in advancing our fundamental understanding of this new class of nanostructures. Finally we attempt to look into the future and offer our personal opinions on what the future trends will be in nanowire research.

  1. Excitonic terahertz photoconductivity in intrinsic semiconductor nanowires

    Science.gov (United States)

    Yan, Jie-Yun

    2018-06-01

    Excitonic terahertz photoconductivity in intrinsic semiconductor nanowires is studied. Based on the excitonic theory, the numerical method to calculate the photoconductivity spectrum in the nanowires is developed, which can simulate optical pump terahertz-probe spectroscopy measurements on real nanowires and thereby calculate the typical photoconductivity spectrum. With the help of the energetic structure deduced from the calculated linear absorption spectrum, the numerically observed shift of the resonant peak in the photoconductivity spectrum is found to result from the dominant exciton transition between excited or continuum states to the ground state, and the quantitative analysis is in good agreement with the quantum plasmon model. Besides, the dependence of the photoconductivity on the polarization of the terahertz field is also discussed. The numerical method and supporting theoretical analysis provide a new tool for experimentalists to understand the terahertz photoconductivity in intrinsic semiconductor nanowires at low temperatures or for nanowires subjected to below bandgap photoexcitation, where excitonic effects dominate.

  2. Contact planarization of ensemble nanowires

    Science.gov (United States)

    Chia, A. C. E.; LaPierre, R. R.

    2011-06-01

    The viability of four organic polymers (S1808, SC200, SU8 and Cyclotene) as filling materials to achieve planarization of ensemble nanowire arrays is reported. Analysis of the porosity, surface roughness and thermal stability of each filling material was performed. Sonication was used as an effective method to remove the tops of the nanowires (NWs) to achieve complete planarization. Ensemble nanowire devices were fully fabricated and I-V measurements confirmed that Cyclotene effectively planarizes the NWs while still serving the role as an insulating layer between the top and bottom contacts. These processes and analysis can be easily implemented into future characterization and fabrication of ensemble NWs for optoelectronic device applications.

  3. Plasmonic Waveguide-Integrated Nanowire Laser

    DEFF Research Database (Denmark)

    Bermudez-Urena, Esteban; Tutuncuoglu, Gozde; Cuerda, Javier

    2017-01-01

    Next-generation optoelectronic devices and photonic circuitry will have to incorporate on-chip compatible nanolaser sources. Semiconductor nanowire lasers have emerged as strong candidates for integrated systems with applications ranging from ultrasensitive sensing to data communication technolog......Next-generation optoelectronic devices and photonic circuitry will have to incorporate on-chip compatible nanolaser sources. Semiconductor nanowire lasers have emerged as strong candidates for integrated systems with applications ranging from ultrasensitive sensing to data communication...... technologies. Despite significant advances in their fundamental aspects, the integration within scalable photonic circuitry remains challenging. Here we report on the realization of hybrid photonic devices consisting of nanowire lasers integrated with wafer-scale lithographically designed V-groove plasmonic...

  4. Simulation study of dielectrophoretic assembly of nanowire between electrode pairs

    Energy Technology Data Exchange (ETDEWEB)

    Tao, Quan, E-mail: taq3@pitt.edu; Lan, Fei; Jiang, Minlin [University of Pittsburgh, The Department of Electrical and Computer Engineering (United States); Wei, Fanan [Chinese Academy of Sciences, State Key Laboratory of Robotics, Shenyang Institute of Automation (China); Li, Guangyong, E-mail: gul6@pitt.edu [University of Pittsburgh, The Department of Electrical and Computer Engineering (United States)

    2015-07-15

    Dielectrophoresis (DEP) of rod-shaped nanostructures is attractive because of its exceptional capability to fabricate nanowire-based electronic devices. This efficient manipulation method, however, has a common side effect of assembling a certain number of nanowires at undesired positions. It is therefore essential to understand the underlying physics of DEP of nanowires in order to better guide the assembly. In this work, we propose theoretical methods to characterize the dielectrophoretic force and torque as well as the hydrodynamic drag force and torque on the nanowire (typical length: 10 μm). The trajectory of the nanowire is then simulated based on rigid body dynamics. The nanowire is predicted to either bridge the electrodes or attach on the surface of one electrode. A neighborhood in which the nanowire is more likely to bridge electrodes is found, which is conducive to successful assembly. The simulation study in this work provides us not only a better understanding of the underlying physics but also practical guidance on nanowire assembly by DEP.

  5. Zn-dopant dependent defect evolution in GaN nanowires

    Science.gov (United States)

    Yang, Bing; Liu, Baodan; Wang, Yujia; Zhuang, Hao; Liu, Qingyun; Yuan, Fang; Jiang, Xin

    2015-10-01

    Zn doped GaN nanowires with different doping levels (0, doping on the defect evolution, including stacking fault, dislocation, twin boundary and phase boundary, has been systematically investigated by transmission electron microscopy and first-principles calculations. Undoped GaN nanowires show a hexagonal wurtzite (WZ) structure with good crystallinity. Several kinds of twin boundaries, including (101&cmb.macr;3), (101&cmb.macr;1) and (202&cmb.macr;1), as well as Type I stacking faults (...ABABC&cmb.b.line;BCB...), are observed in the nanowires. The increasing Zn doping level (GaN nanowires. At high Zn doping level (3-5 at%), meta-stable cubic zinc blende (ZB) domains are generated in the WZ GaN nanowires. The WZ/ZB phase boundary (...ABABAC&cmb.b.line;BA...) can be identified as Type II stacking faults. The density of stacking faults (both Type I and Type II) increases with increasing the Zn doping levels, which in turn leads to a rough-surface morphology in the GaN nanowires. First-principles calculations reveal that Zn doping will reduce the formation energy of both Type I and Type II stacking faults, favoring their nucleation in GaN nanowires. An understanding of the effect of Zn doping on the defect evolution provides an important method to control the microstructure and the electrical properties of p-type GaN nanowires.Zn doped GaN nanowires with different doping levels (0, doping on the defect evolution, including stacking fault, dislocation, twin boundary and phase boundary, has been systematically investigated by transmission electron microscopy and first-principles calculations. Undoped GaN nanowires show a hexagonal wurtzite (WZ) structure with good crystallinity. Several kinds of twin boundaries, including (101&cmb.macr;3), (101&cmb.macr;1) and (202&cmb.macr;1), as well as Type I stacking faults (...ABABC&cmb.b.line;BCB...), are observed in the nanowires. The increasing Zn doping level (GaN nanowires. At high Zn doping level (3-5 at%), meta

  6. Epitaxy of advanced nanowire quantum devices

    NARCIS (Netherlands)

    Gazibegovic, S.; Car, D.; Zhang, H.; Balk, S.C.; Logan, J.A.; De Moor, M.W.A.; Cassidy, M.C.; Schmits, R.; Xu, D.; Wang, G.; Krogstrup, P.; Op Het Veld, R.L.M.; Zuo, K.; Vos, Y.; Shen, J.; Bouman, D.; Shojaei, B.; Pennachio, D.; Lee, J.S.; van Veldhoven, P.J.; Koelling, S.; Verheijen, M.A.; Kouwenhoven, L.P.; Palmstrøm, C.J.; Bakkers, E.P.A.M.

    2017-01-01

    Semiconductor nanowires are ideal for realizing various low-dimensional quantum devices. In particular, topological phases of matter hosting non-Abelian quasiparticles (such as anyons) can emerge when a semiconductor nanowire with strong spin-orbit coupling is brought into contact with a

  7. Permanent bending and alignment of ZnO nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Borschel, Christian; Spindler, Susann; Oertel, Michael; Ronning, Carsten [Institut fuer Festkoerperphysik, Friedrich-Schiller-Universitaet Jena, Max-Wien-Platz 1, 07743 Jena (Germany); Lerose, Damiana [MPI fuer Mikrostrukturphysik, Weinberg 2, 06120 Halle/Saale (Germany); Institut fuer Photonische Technologien, Albert-Einstein-Strasse 9, 07745 Jena (Germany); Bochmann, Arne [Institut fuer Photonische Technologien, Albert-Einstein-Strasse 9, 07745 Jena (Germany); Christiansen, Silke H. [Institut fuer Photonische Technologien, Albert-Einstein-Strasse 9, 07745 Jena (Germany); MPI fuer die Physik des Lichts, Guenther-Scharowsky-Str. 1, 91058 Erlangen (Germany); Nietzsche, Sandor [Zentrum fuer Elektronenmikroskopie, Friedrich-Schiller-Universitaet Jena, Ziegelmuehlenweg 1, 07743 Jena (Germany)

    2011-07-01

    Ion beams can be used to bend or re-align nanowires permanently, after they have been grown. We have irradiated ZnO nanowires with ions of different species and energy, achieving bending and alignment in various directions. We study the bending of single nanowires as well as the simultaneous alignment of large ensembles of ZnO nanowires in detail. Computer simulations show that the bending is initiated by ion beam induced damage. Dislocations are identified to relax stresses and make the bending and alignment permanent and resistant against annealing procedures.

  8. Effect of the wire width and magnetic field on the detection efficiency of superconducting nanowire single-photon detectors; Einfluss von Geometrie und magnetischem Feld auf die Effizienz supraleitender Nanodraht-Einzelphotonendetektoren

    Energy Technology Data Exchange (ETDEWEB)

    Lusche, Robert

    2015-06-24

    The aim of this thesis is to a gain deeper understanding of the single photon detection process in superconducting nanowire single-photon detectors (SNSPDs). A detailed knowledge of the physical principles and mechanisms which the detection process is based on helps to improve specific detector parameters and hence the suitability of such detectors for various applications. Several theoretical models of the detection process have been compared to the results of measurements of photon and dark count rates in meander-type TaN- and NbN-SNSPDs with different wire-widths in a broad range of wavelengths, transport currents and magnetic fields. In the first part of the thesis, measurements of the photon and dark count rates of TaN- and NbN-SNSPDs with varying wire width are described. For each meander spectra of the intrinsic detection efficiency (IDE) were derived. The IDE represents the probability that the SNSPD generates a measurable voltage pulse upon absorption of a photon. The recorded IDE spectra have shown a characteristic cut-off wavelength up to which photons were detected with a probability of 100 per cent. Furthermore it was found that the cut-off wavelengths increases linearly with the increase in the inverse wire width. This observation is best explained by the refined hot spot model. The second part of the thesis describes the influence of magnetic field on the photon and dark count rates of NbN-SNSPDs. In order to apply magnetic fields to the meanders a continuous-flow inset for mobile 4He storage dewars was constructed. It was shown for the first time, that the photon count rate exhibits a magnetic field dependence. Furthermore it could be shown that the measured dependence of the photon and dark count rate on the magnetic field is in good agreement with the theoretical model of vortex-assisted photon detection in narrow superconducting lines. Hence, within this thesis it could be confirmed that magnetic vortices are involved in the single photon

  9. Effects of Nanowire Length and Surface Roughness on the Electrochemical Sensor Properties of Nafion-Free, Vertically Aligned Pt Nanowire Array Electrodes

    Directory of Open Access Journals (Sweden)

    Zhiyang Li

    2015-09-01

    Full Text Available In this paper, vertically aligned Pt nanowire arrays (PtNWA with different lengths and surface roughnesses were fabricated and their electrochemical performance toward hydrogen peroxide (H2O2 detection was studied. The nanowire arrays were synthesized by electroplating Pt in nanopores of anodic aluminum oxide (AAO template. Different parameters, such as current density and deposition time, were precisely controlled to synthesize nanowires with different surface roughnesses and various lengths from 3 μm to 12 μm. The PtNWA electrodes showed better performance than the conventional electrodes modified by Pt nanowires randomly dispersed on the electrode surface. The results indicate that both the length and surface roughness can affect the sensing performance of vertically aligned Pt nanowire array electrodes. Generally, longer nanowires with rougher surfaces showed better electrochemical sensing performance. The 12 μm rough surface PtNWA presented the largest sensitivity (654 μA·mM−1·cm−2 among all the nanowires studied, and showed a limit of detection of 2.4 μM. The 12 μm rough surface PtNWA electrode also showed good anti-interference property from chemicals that are typically present in the biological samples such as ascorbic, uric acid, citric acid, and glucose. The sensing performance in real samples (river water was tested and good recovery was observed. These Nafion-free, vertically aligned Pt nanowires with surface roughness control show great promise as versatile electrochemical sensors and biosensors.

  10. Synthesis and characterization of Au incorporated Alq3 nanowires

    Science.gov (United States)

    Khan, Mohammad Bilal; Ahmad, Sultan; Parwaz, M.; Rahul, Khan, Zishan H.

    2018-05-01

    We report the synthesis and characterization of pure and Au incorporated Alq3 nanowires. These nanowires are synthesized using thermal vapor transport method. The luminescence intensity of Au incorporated Alq3 nanowires are recorded to be higher than that of pure Alq3 nanowires, which is found to increase with the increase in Au concentration. Fluorescence quenching is also observed when Au concentration is increased beyond the certain limit.

  11. Facile synthesis of porous Pt botryoidal nanowires and their electrochemical properties

    International Nuclear Information System (INIS)

    Huang, Zhongyuan; Zhou, Haihui; Chen, Zhongxue; Zeng, Fanyan; Chen, Liang; Luo, Wucheng; Kuang, Yafei

    2014-01-01

    Highlights: • Porous Pt nanowires were synthesized by combination of soft and hard templets. • Te nanowires were used as the hard templet and reductant. • The Pt nanowires are composed of many small Pt nanoparticles and pores. • The Pt nanowires have very good electrochemical activity and stability. - Abstract: Long and porous Pt botryoidal nanowires (Pt BNWs) were facilely synthesized by combination of soft and hard templates accompanying chemical reduction of ascorbic acid and replacement of Te nanowires. This bis-template and bis-reductant method is proved to be an effective way to prepare nanowires with special structure. The scanning electron microscopy and transmission electron microscopy images show the as-prepared product is botryoidal nanowires with diameter of 20–30 nm and length of several micrometers. High resolution transmission electron microscopy shows the Pt botryoidal nanowires are composed of many small Pt nanoparticles (about 3 nm in diameter), which is just like that many grapes grow on the branch. These small nanoparticles make Pt nanowires have botryoidal and porous structure. Moreover, the diameter of Pt BNWs can be adjusted by changing the dosage of Pt precursor, polyvinylpyrrolidone and L-ascorbic acid. The electrocatalytic performance of Pt botryoidal nanowires is studied, which shows that the as-prepared Pt botryoidal nanowires have not only high activity but also good stability for oxygen reduction reaction

  12. Quantum-confined nanowires as vehicles for enhanced electrical transport

    International Nuclear Information System (INIS)

    Mohammad, S Noor

    2012-01-01

    Electrical transport in semiconductor nanowires taking quantum confinement and dielectric confinement into account has been studied. A distinctly new route has been employed for the study. The fundamental science underlying the model is based on a relationship between the quantum confinement and the structural disorder of the nanowire surface. The role of surface energy and thermodynamic imbalance in nanowire structural disorder has been described. A model for the diameter dependence of energy bandgap of nanowires has been developed. Ionized impurity scattering, dislocation scattering and acoustic phonon scattering have been taken into account to study carrier mobility. A series of calculations on silicon nanowires show that carrier mobility in nanowires can be greatly enhanced by quantum confinement and dielectric confinement. The electron mobility can, for example, be a factor of 2–10 higher at room temperature than the mobility in a free-standing silicon nanowire. The calculated results agree well with almost all experimental and theoretical results available in the literature. They successfully explain experimental observations not understood before. The model is general and applicable to nanowires from all possible semiconductors. It is perhaps the first physical model highlighting the impact of both quantum confinement and dielectric confinement on carrier transport. It underscores the basic causes of thin, lowly doped nanowires in the temperature range 200 K ≤ T ≤ 500 K yielding very high carrier mobility. It suggests that the scattering by dislocations (stacking faults) can be very detrimental for carrier mobility. (paper)

  13. Electronic transport in narrow-gap semiconductor nanowires

    International Nuclear Information System (INIS)

    Bloemers, Christian

    2012-01-01

    Throughout this work the electronic transport properties of InAs, InN, and GaAs/InAs core/shell nanowires have been analyzed. This includes the analysis of specific resistivity at room temperature and low temperatures as well as the breakdown of resistivity by a contribution of mobility and carrier concentration using gate measurements. While the InN nanowires showed homogeneous transport properties, there was a large statistical spread in the properties of InAs nanowires. Differing crystal structures and the surface conditions are identified to be the main reasons for the statistical spread. Both quantities of influence have been pointed out by comparing the transport parameters before and after a surface treatment (electron irradiation and long time ambient air exposure), and by comparing the transport parameters of wires grown by different growth methods which exhibit different kinds of crystal structure. In particular, the temperature dependence of the conductivity revealed different activation energies in nanowires with differing crystal structures. An explanation has been suggested in terms of stacking fault induced potential barriers. A field-effect measurement setup has been utilized to determine the nanowire mobility and carrier concentration. Even though this method is widely used for nanowires, it is subject to a serious disadvantage concerning the influence of surface and interface states on the measurements. As an alternative method which does not suffer from this drawback, Hall measurements have been successfully performed on InAs nanowires for the first time. These measurements became possible because of the utilization of a new electron beam lithographic procedure with an alignment accuracy in the 5 nm range. Carrier concentration values could be determined and compared to the ones obtained from conventional field-effect measurements. The results of the Hall measurements revealed a methodical overestimation of the carrier concentrations obtained

  14. Electronic transport in narrow-gap semiconductor nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Bloemers, Christian

    2012-10-19

    Throughout this work the electronic transport properties of InAs, InN, and GaAs/InAs core/shell nanowires have been analyzed. This includes the analysis of specific resistivity at room temperature and low temperatures as well as the breakdown of resistivity by a contribution of mobility and carrier concentration using gate measurements. While the InN nanowires showed homogeneous transport properties, there was a large statistical spread in the properties of InAs nanowires. Differing crystal structures and the surface conditions are identified to be the main reasons for the statistical spread. Both quantities of influence have been pointed out by comparing the transport parameters before and after a surface treatment (electron irradiation and long time ambient air exposure), and by comparing the transport parameters of wires grown by different growth methods which exhibit different kinds of crystal structure. In particular, the temperature dependence of the conductivity revealed different activation energies in nanowires with differing crystal structures. An explanation has been suggested in terms of stacking fault induced potential barriers. A field-effect measurement setup has been utilized to determine the nanowire mobility and carrier concentration. Even though this method is widely used for nanowires, it is subject to a serious disadvantage concerning the influence of surface and interface states on the measurements. As an alternative method which does not suffer from this drawback, Hall measurements have been successfully performed on InAs nanowires for the first time. These measurements became possible because of the utilization of a new electron beam lithographic procedure with an alignment accuracy in the 5 nm range. Carrier concentration values could be determined and compared to the ones obtained from conventional field-effect measurements. The results of the Hall measurements revealed a methodical overestimation of the carrier concentrations obtained

  15. The Joule heating problem in silver nanowire transparent electrodes

    Science.gov (United States)

    Khaligh, H. H.; Xu, L.; Khosropour, A.; Madeira, A.; Romano, M.; Pradére, C.; Tréguer-Delapierre, M.; Servant, L.; Pope, M. A.; Goldthorpe, I. A.

    2017-10-01

    Silver nanowire transparent electrodes have shown considerable potential to replace conventional transparent conductive materials. However, in this report we show that Joule heating is a unique and serious problem with these electrodes. When conducting current densities encountered in organic solar cells, the average surface temperature of indium tin oxide (ITO) and silver nanowire electrodes, both with sheet resistances of 60 ohms/square, remains below 35 °C. However, in contrast to ITO, the temperature in the nanowire electrode is very non-uniform, with some localized points reaching temperatures above 250 °C. These hotspots accelerate nanowire degradation, leading to electrode failure after 5 days of continuous current flow. We show that graphene, a commonly used passivation layer for these electrodes, slows nanowire degradation and creates a more uniform surface temperature under current flow. However, the graphene does not prevent Joule heating in the nanowires and local points of high temperature ultimately shift the failure mechanism from nanowire degradation to melting of the underlying plastic substrate. In this paper, surface temperature mapping, lifetime testing under current flow, post-mortem analysis, and modelling illuminate the behaviour and failure mechanisms of nanowires under extended current flow and provide guidelines for managing Joule heating.

  16. Solution-processed core-shell nanowires for efficient photovoltaic cells.

    Science.gov (United States)

    Tang, Jinyao; Huo, Ziyang; Brittman, Sarah; Gao, Hanwei; Yang, Peidong

    2011-08-21

    Semiconductor nanowires are promising for photovoltaic applications, but, so far, nanowire-based solar cells have had lower efficiencies than planar cells made from the same materials, even allowing for the generally lower light absorption of nanowires. It is not clear, therefore, if the benefits of the nanowire structure, including better charge collection and transport and the possibility of enhanced absorption through light trapping, can outweigh the reductions in performance caused by recombination at the surface of the nanowires and at p-n junctions. Here, we fabricate core-shell nanowire solar cells with open-circuit voltage and fill factor values superior to those reported for equivalent planar cells, and an energy conversion efficiency of ∼5.4%, which is comparable to that of equivalent planar cells despite low light absorption levels. The device is made using a low-temperature solution-based cation exchange reaction that creates a heteroepitaxial junction between a single-crystalline CdS core and single-crystalline Cu2S shell. We integrate multiple cells on single nanowires in both series and parallel configurations for high output voltages and currents, respectively. The ability to produce efficient nanowire-based solar cells with a solution-based process and Earth-abundant elements could significantly reduce fabrication costs relative to existing high-temperature bulk material approaches.

  17. Growth Mechanism of Nanowires: Binary and Ternary Chalcogenides

    Science.gov (United States)

    Singh, N. B.; Coriell, S. R.; Su, Ching-Hua; Hopkins, R. H.; Arnold, B.; Choa, Fow-Sen; Cullum, Brian

    2016-01-01

    Semiconductor nanowires exhibit very exciting optical and electrical properties including high transparency and a several order of magnitude better photocurrent than thin film and bulk materials. We present here the mechanism of nanowire growth from the melt-liquid-vapor medium. We describe preliminary results of binary and ternary selenide materials in light of recent theories. Experiments were performed with lead selenide and thallium arsenic selenide systems which are multifunctional material and have been used for detectors, acousto-optical, nonlinear and radiation detection applications. We observed that small units of nanocubes and elongated nanoparticles arrange and rearrange at moderate melt undercooling to form the building block of a nanowire. Since we avoided the catalyst, we observed self-nucleation and uncontrolled growth of wires from different places. Growth of lead selenide nanowires was performed by physical vapor transport method and thallium arsenic selenide nanowire by vapor-liquid-solid (VLS) method. In some cases very long wires (>mm) are formed. To achieve this goal experiments were performed to create situation where nanowires grew on the surface of solid thallium arsenic selenide itself.

  18. Gibbs–Thomson Effect in Planar Nanowires: Orientation and Doping Modulated Growth

    KAUST Repository

    Shen, Youde; Chen, Renjie; Yu, Xuechao; Wang, Qijie; Jungjohann, Katherine L.; Dayeh, Shadi A.; Wu, Tao

    2016-01-01

    Epitaxy-enabled bottom-up synthesis of self-assembled planar nanowires via the vapor-liquid-solid mechanism is an emerging and promising approach toward large-scale direct integration of nanowire-based devices without postgrowth alignment. Here, by examining large assemblies of indium tin oxide nanowires on yttria-stabilized zirconia substrate, we demonstrate for the first time that the growth dynamics of planar nanowires follows a modified version of the Gibbs-Thomson mechanism, which has been known for the past decades to govern the correlations between thermodynamic supersaturation, growth speed, and nanowire morphology. Furthermore, the substrate orientation strongly influences the growth characteristics of epitaxial planar nanowires as opposed to impact at only the initial nucleation stage in the growth of vertical nanowires. The rich nanowire morphology can be described by a surface-energy-dependent growth model within the Gibbs-Thomson framework, which is further modulated by the tin doping concentration. Our experiments also reveal that the cutoff nanowire diameter depends on the substrate orientation and decreases with increasing tin doping concentration. These results enable a deeper understanding and control over the growth of planar nanowires, and the insights will help advance the fabrication of self-assembled nanowire devices. © 2016 American Chemical Society.

  19. Gibbs–Thomson Effect in Planar Nanowires: Orientation and Doping Modulated Growth

    KAUST Repository

    Shen, Youde

    2016-06-02

    Epitaxy-enabled bottom-up synthesis of self-assembled planar nanowires via the vapor-liquid-solid mechanism is an emerging and promising approach toward large-scale direct integration of nanowire-based devices without postgrowth alignment. Here, by examining large assemblies of indium tin oxide nanowires on yttria-stabilized zirconia substrate, we demonstrate for the first time that the growth dynamics of planar nanowires follows a modified version of the Gibbs-Thomson mechanism, which has been known for the past decades to govern the correlations between thermodynamic supersaturation, growth speed, and nanowire morphology. Furthermore, the substrate orientation strongly influences the growth characteristics of epitaxial planar nanowires as opposed to impact at only the initial nucleation stage in the growth of vertical nanowires. The rich nanowire morphology can be described by a surface-energy-dependent growth model within the Gibbs-Thomson framework, which is further modulated by the tin doping concentration. Our experiments also reveal that the cutoff nanowire diameter depends on the substrate orientation and decreases with increasing tin doping concentration. These results enable a deeper understanding and control over the growth of planar nanowires, and the insights will help advance the fabrication of self-assembled nanowire devices. © 2016 American Chemical Society.

  20. Atomistic simulations of the yielding of gold nanowires

    International Nuclear Information System (INIS)

    Diao Jiankuai; Gall, Ken; Dunn, Martin L.; Zimmerman, Jonathan A.

    2006-01-01

    We performed atomistic simulations to study the effect of free surfaces on the yielding of gold nanowires. Tensile surface stresses on the surfaces of the nanowires cause them to contract along the length with respect to the bulk face-centered cubic lattice and induce compressive stress in the interior. When the cross-sectional area of a nanowire is less than 2.45 nm x 2.45 nm, the wire yields under its surface stresses. Under external forces and surface stresses, nanowires yield via the nucleation and propagation of the {1 1 1} partial dislocations. The magnitudes of the tensile and compressive yield stress of nanowires increase and decrease, respectively, with a decrease of the wire width. The magnitude of the tensile yield stress is much larger than that of the compressive yield stress for small nanowires, while for small nanowires, tensile and compressive yield stresses have similar magnitudes. The critical resolved shear stress (RSS) by external forces depends on wire width, orientation and loading condition (tension vs. compression). However, the critical RSS in the interior of the nanowires, which is exerted by both the external force and the surface-stress-induced compressive stress, does not change significantly with wire width for same orientation and same loading condition, and can thus serve as a 'local' criterion. This local criterion is invoked to explain the observed size dependence of yield behavior and tensile/compressive yield stress asymmetry, considering surface stress effects and different slip systems active in tensile and compressive yielding

  1. Magnetic Nanowires as Materials for Cancer Cell Destruction

    KAUST Repository

    Contreras, Maria F.

    2015-12-01

    Current cancer therapies are highly cytotoxic and their delivery to exclusively the affected site is poorly controlled, resulting in unavoidable and often severe side effects. In an effort to overcome such issues, magnetic nanoparticles have been recently gaining relevance in the areas of biomedical applications and therapeutics, opening pathways to alternative methods. This led to the concept of magnetic particle hyperthermia in which magnetic nano beads are heated by a high power magnetic field. The increase in temperature kills the cancer cells, which are more susceptible to heat in comparison to healthy cells. In this dissertation, the possibility to kill cancer cells with magnetic nanowires is evaluated. The idea is to exploit a magnetomechanical effect, where nanowires cause cancer cell death through vibrating in a low power magnetic field. Specifically, the magnetic nanowires effects to cells in culture and their ability to induce cancer cell death, when combined with an alternating magnetic field, was investigated. Nickel and iron nanowires of 35 nm diameter and 1 to 5 μm long were synthesized by electrodeposition into nanoporous alumina templates, which were prepared using a two-step anodization process on highly pure aluminum substrates. For the cytotoxicity studies, the nanowires were added to cancer cells in culture, varying the incubation time and the concentration. The cell-nanowire interaction was thoroughly studied at the cellular level (mitochondrial metabolic activity, cell membrane integrity and, apoptosis/necrosis assay), and optical level (transmission electron and confocal microscopy). Furthermore, to investigate their therapeutic potential, an alternating magnetic field was applied varying its intensity and frequency. After the magnetic field application, cells health was measured at the mitochondrial activity level. Cytotoxicity results shed light onto the cellular tolerance to the nanowires, which helped in establishing the appropriate

  2. Biotemplated Synthesis of PZT Nanowires

    Science.gov (United States)

    2013-11-25

    electromechanical coupling coefficient , Y is the Young’s modulus, and Ri is intrinsic resistance. The PZT nanowire- based film is taken to have negligible...robotic actuation, and bioMEMS. Lead zirconate titanate ( PZT ), in particular, has attracted significant attention, owing to its superior...electromechanical conversion performance. Yet, the ability to synthesize crystalline PZT nanowires with reproducible and well-controlled properties remains a

  3. Tunneling magnetoresistance in Si nanowires

    KAUST Repository

    Montes Muñoz, Enrique

    2016-11-09

    We investigate the tunneling magnetoresistance of small diameter semiconducting Si nanowires attached to ferromagnetic Fe electrodes, using first principles density functional theory combined with the non-equilibrium Green\\'s functions method for quantum transport. Silicon nanowires represent an interesting platform for spin devices. They are compatible with mature silicon technology and their intrinsic electronic properties can be controlled by modifying the diameter and length. Here we systematically study the spin transport properties for neutral nanowires and both n and p doping conditions. We find a substantial low bias magnetoresistance for the neutral case, which halves for an applied voltage of about 0.35 V and persists up to 1 V. Doping in general decreases the magnetoresistance, as soon as the conductance is no longer dominated by tunneling.

  4. Perspectives of single cast nanowires technology

    International Nuclear Information System (INIS)

    Ioisher, Anatolii; Badinter, Efim; Postolache, Vitalie; Leporda, Nicolae; Tiginyanu, Ion; Monaico, Eduard

    2011-01-01

    The paper is dedicated to production potential of glass-coated cast nanowire with metal-, semimetal- and semiconductor-based cores by means of Taylor-Ulitovsky method. Criteria of melted core-formative material penetration into a drawing capillary were analyzed. Theoretical preconditions of the reduction of cast microwire diameter up to nano-dimensions of core are reviewed and an improved method of cast nanowire manufacturing is proposed. Correctness of conclusions was experimentally proved and laboratory samples of micro- and nano-wires with core diameter of about 200-300 nanometers were produced, even in case of materials with poor adhesion.

  5. Growth Mechanism of Nanowires: Ternary Chalcogenides

    Science.gov (United States)

    Singh, N. B.; Coriell, S. R.; Hopkins, R. H.; Su, Ching Hua; Arnold, B.; Choa, Fow-Sen; Cullum, Brian

    2016-01-01

    In the past two decades there has been a large rise in the investment and expectations for nanotechnology use. Almost every area of research has projected improvements in sensors, or even a promise for the emergence of some novel device technologies. For these applications major focuses of research are in the areas of nanoparticles and graphene. Although there are some near term applications with nanowires in photodetectors and other low light detectors, there are few papers on the growth mechanism and fabrication of nanowire-based devices. Semiconductor nanowires exhibit very favorable and promising optical properties, including high transparency and a several order of magnitude better photocurrent than thin film and bulk materials. We present here an overview of the mechanism of nanowire growth from the melt, and some preliminary results for the thallium arsenic selenide material system. Thallium arsenic selenide (TAS) is a multifunctional material combining excellent acousto-optical, nonlinear and radiation detection properties. We observed that small units of (TAS) nanocubes arrange and rearrange at moderate melt undercooling to form the building block of a nanowire. In some cases very long wires (less than mm) are formed. Since we avoided the catalyst, we observed self-nucleation and uncontrolled growth of wires from different places.

  6. Disorder-induced enhancement of conductance in doped nanowires

    Institute of Scientific and Technical Information of China (English)

    Xu Ning; Wang Bao-Lin; Sun Hou-Qian; Kong Fan-Jie

    2010-01-01

    A new mechanism is proposed to explain the enhancement of conductance in doped nanowires. It is shown that the anomalous enhancement of conductance is due to surface doping. The conductance in doped nanowires increases with dopant concentration, which is qualitatively consistent with the existing experimental results. In addition, the I-V curves are linear and thus suggest that the metal electrodes make ohmic contacts to the shell-doped nanowires.The electric current increases with wire diameter (D) and decreases exponentially with wire length (L). Therefore, the doped nanowires have potential application in nanoscale electronic and optoelectronic devices.

  7. Sediment Transport Dynamic in a Meandering Fluvial System: Case Study of Chini River

    Science.gov (United States)

    Nazir, M. H. M.; Awang, S.; Shaaban, A. J.; Yahaya, N. K. E. M.; Jusoh, A. M.; Arumugam, M. A. R. M. A.; Ghani, A. A.

    2016-07-01

    Sedimentation in river reduces the flood carrying capacity which lead to the increasing of inundation area in the river basin. Basic sediment transport can predict the fluvial processes in natural rivers and stream through modeling approaches. However, the sediment transport dynamic in a small meandering and low-lying fluvial system is considered scarce in Malaysia. The aim of this study was to analyze the current riverbed erosion and sedimentation scenarios along the Chini River, Pekan, Pahang. The present study revealed that silt and clay has potentially been eroded several parts of the river. Sinuosity index (1.98) indicates that Chini River is very unstable and continuous erosion process in waterways has increase the riverbank instability due to the meandering factors. The riverbed erosional and depositional process in the Chini River is a sluggish process since the lake reduces the flow velocity and causes the deposited particles into the silt and clay soil at the bed of the lake. Besides, the bed layer of the lake comprised of cohesive silt and clayey composition that tend to attach the larger grain size of sediment. The present study estimated the total sediment accumulated along the Chini River is 1.72 ton. The HEC-RAS was employed in the simulations and in general the model performed well, once all parameters were set within their effective ranges.

  8. Increasing the efficiency of polymer solar cells by silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Eisenhawer, B; Sivakov, V; Pietsch, M; Andrae, G; Falk, F [Institute of Photonic Technology, Albert-Einstein-Strasse 9, 07743 Jena (Germany); Sensfuss, S, E-mail: bjoern.eisenhawer@ipht-jena.de [Thuringian Institute for Textile and Plastics Research, Breitscheidstrasse 97, 07407 Rudolstadt (Germany)

    2011-08-05

    Silicon nanowires have been introduced into P3HT:[60]PCBM solar cells, resulting in hybrid organic/inorganic solar cells. A cell efficiency of 4.2% has been achieved, which is a relative improvement of 10% compared to a reference cell produced without nanowires. This increase in cell performance is possibly due to an enhancement of the electron transport properties imposed by the silicon nanowires. In this paper, we present a novel approach for introducing the nanowires by mixing them into the polymer blend and subsequently coating the polymer/nanowire blend onto a substrate. This new onset may represent a viable pathway to producing nanowire-enhanced polymer solar cells in a reel to reel process.

  9. Increasing the efficiency of polymer solar cells by silicon nanowires

    International Nuclear Information System (INIS)

    Eisenhawer, B; Sivakov, V; Pietsch, M; Andrae, G; Falk, F; Sensfuss, S

    2011-01-01

    Silicon nanowires have been introduced into P3HT:[60]PCBM solar cells, resulting in hybrid organic/inorganic solar cells. A cell efficiency of 4.2% has been achieved, which is a relative improvement of 10% compared to a reference cell produced without nanowires. This increase in cell performance is possibly due to an enhancement of the electron transport properties imposed by the silicon nanowires. In this paper, we present a novel approach for introducing the nanowires by mixing them into the polymer blend and subsequently coating the polymer/nanowire blend onto a substrate. This new onset may represent a viable pathway to producing nanowire-enhanced polymer solar cells in a reel to reel process.

  10. Elastic properties and electron transport in InAs nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Migunov, Vadim

    2013-02-22

    The electron transport and elastic properties of InAs nanowires grown by chemical vapor deposition on InAs (001) substrate were studied experimentally, in-situ in a transmission electron microscope (TEM). A TEM holder allowing the measurement of a nanoforce while simultaneous imaging nanowire bending was used. Diffraction images from local areas of the wire were recorded to correlate elastic properties with the atomic structure of the nanowires. Another TEM holder allowing the application of electrical bias between the nanowire and an apex of a metallic needle while simultaneous imaging the nanowire in TEM or performing electron holography was used to detect mechanical vibrations in mechanical study or holographical observation of the nanowire inner potential in the electron transport studies. The combination of the scanning probe methods with TEM allows to correlate the measured electric and elastic properties of the nanowires with direct identification of their atomic structure. It was found that the nanowires have different atomic structures and different stacking fault defect densities that impacts critically on the elastic properties and electric transport. The unique methods, that were applied in this work, allowed to obtain dependencies of resistivity and Young's modulus of left angle 111 right angle -oriented InAs nanowires on defect density and diameter. It was found that the higher is the defect density the higher are the resistivity and the Young's modulus. Regarding the resistivity, it was deduced that the stacking faults increase the scattering of the electrons in the nanowire. These findings are consistent with the literature, however, the effect described by the other groups is not so pronounced. This difference can be attributed to the significant incompleteness of the physical models used for the data analysis. Regarding the elastic modulus, there are several mechanisms affecting the elasticity of the nanowires discussed in the thesis. It

  11. Three-dimensional flow structure and patterns of bed shear stress in an evolving compound meander bend

    Science.gov (United States)

    Engel, Frank; Rhoads, Bruce L.

    2016-01-01

    Compound meander bends with multiple lobes of maximum curvature are common in actively evolving lowland rivers. Interaction among spatial patterns of mean flow, turbulence, bed morphology, bank failures and channel migration in compound bends is poorly understood. In this paper, acoustic Doppler current profiler (ADCP) measurements of the three-dimensional (3D) flow velocities in a compound bend are examined to evaluate the influence of channel curvature and hydrologic variability on the structure of flow within the bend. Flow structure at various flow stages is related to changes in bed morphology over the study timeframe. Increases in local curvature within the upstream lobe of the bend reduce outer bank velocities at morphologically significant flows, creating a region that protects the bank from high momentum flow and high bed shear stresses. The dimensionless radius of curvature in the upstream lobe is one-third less than that of the downstream lobe, with average bank erosion rates less than half of the erosion rates for the downstream lobe. Higher bank erosion rates within the downstream lobe correspond to the shift in a core of high velocity and bed shear stresses toward the outer bank as flow moves through the two lobes. These erosion patterns provide a mechanism for continued migration of the downstream lobe in the near future. Bed material size distributions within the bend correspond to spatial patterns of bed shear stress magnitudes, indicating that bed material sorting within the bend is governed by bed shear stress. Results suggest that patterns of flow, sediment entrainment, and planform evolution in compound meander bends are more complex than in simple meander bends. Moreover, interactions among local influences on the flow, such as woody debris, local topographic steering, and locally high curvature, tend to cause compound bends to evolve toward increasing planform complexity over time rather than stable configurations.

  12. Oxygen deficiency in MoO{sub 3} polycrystalline nanowires and nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Varlec, Ana, E-mail: ana.varlec@ijs.si [Condensed Matter Physics, Jožef Stefan Institute, Jamova 39, SI-1000 Ljubljana (Slovenia); Arčon, Denis [Condensed Matter Physics, Jožef Stefan Institute, Jamova 39, SI-1000 Ljubljana (Slovenia); Faculty of Mathematics and Physics, University of Ljubljana, Jadranska cesta 19, SI-1000 Ljubljana (Slovenia); Škapin, Srečo D. [Advanced Materials Department, Jožef Stefan Institute, Jamova 39, SI-1000 Ljubljana (Slovenia); Remškar, Maja [Condensed Matter Physics, Jožef Stefan Institute, Jamova 39, SI-1000 Ljubljana (Slovenia)

    2016-02-15

    We report on the synthesis of polycrystalline molybdenum oxide (MoO{sub 3}) nanowires via oxidation of molybdenum-sulfur-iodine (Mo{sub 6}S{sub 2}I{sub 8}) nanowires. This unique synthesis route results in an interesting morphology comprising porous nanowires and nanotubes. We found the nanowires to have the orthorhombic MoO{sub 3} structure. The structure is slightly oxygen deficient which results in the appearance of a new resonant Raman band (1004 cm{sup −1}) and paramagnetic defects (Mo{sup 5+}) of both the point and crystallographic shear plane nature. - Highlights: • Polycrystalline MoO{sub 3} nanowires were obtained via oxidation of Mo{sub 6}S{sub 2}I{sub 8} nanowires. • Nanowires are porous and tubular with either filled or empty interior. • Nanowires are slightly oxygen deficient which leads to a new Raman band.

  13. Novel Flame-Based Synthesis of Nanowires for Multifunctional Application

    Science.gov (United States)

    2015-05-13

    pattern (SAED) of SnO2/WO2.9 heterojunction for case 7. TEM (Fig. 14(a)) reveals that the coating on the tungsten- oxide nanowires is actually a...tungsten oxide nanowire,s resulting in radial growth of Zn2SnO4 nanocube/WO2.9 nanowire heterojunction . Furthermore, the combined flame and solution...SECURITY CLASSIFICATION OF: Progress for the project has been made in various areas. Specifically, we report on: (i) flame synthesis of metal- oxide

  14. Optical properties of indium phosphide nanowire ensembles at various temperatures

    International Nuclear Information System (INIS)

    Lohn, Andrew J; Onishi, Takehiro; Kobayashi, Nobuhiko P

    2010-01-01

    Ensembles that contain two types (zincblende and wurtzite) of indium phosphide nanowires grown on non-single crystalline surfaces were studied by micro-photoluminescence and micro-Raman spectroscopy at various low temperatures. The obtained spectra are discussed with the emphasis on the effects of differing lattice types, geometries, and crystallographic orientations present within an ensemble of nanowires grown on non-single crystalline surfaces. In the photoluminescence spectra, a typical Varshni dependence of band gap energy on temperature was observed for emissions from zincblende nanowires and in the high temperature regime energy transfer from excitonic transitions and band-edge transitions was identified. In contrast, the photoluminescence emissions associated with wurtzite nanowires were rather insensitive to temperature. Raman spectra were collected simultaneously from zincblende and wurtzite nanowires coexisting in an ensemble. Raman peaks of the wurtzite nanowires are interpreted as those related to the zincblende nanowires by a folding of the phonon dispersion.

  15. Optical properties of indium phosphide nanowire ensembles at various temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Lohn, Andrew J; Onishi, Takehiro; Kobayashi, Nobuhiko P [Baskin School of Engineering, University of California Santa Cruz, Santa Cruz, CA 95064 (United States); Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, University of California Santa Cruz-NASA Ames Research Center, Moffett Field, CA 94035 (United States)

    2010-09-03

    Ensembles that contain two types (zincblende and wurtzite) of indium phosphide nanowires grown on non-single crystalline surfaces were studied by micro-photoluminescence and micro-Raman spectroscopy at various low temperatures. The obtained spectra are discussed with the emphasis on the effects of differing lattice types, geometries, and crystallographic orientations present within an ensemble of nanowires grown on non-single crystalline surfaces. In the photoluminescence spectra, a typical Varshni dependence of band gap energy on temperature was observed for emissions from zincblende nanowires and in the high temperature regime energy transfer from excitonic transitions and band-edge transitions was identified. In contrast, the photoluminescence emissions associated with wurtzite nanowires were rather insensitive to temperature. Raman spectra were collected simultaneously from zincblende and wurtzite nanowires coexisting in an ensemble. Raman peaks of the wurtzite nanowires are interpreted as those related to the zincblende nanowires by a folding of the phonon dispersion.

  16. Large-scale fabrication of vertically aligned ZnO nanowire arrays

    Science.gov (United States)

    Wang, Zhong L; Das, Suman; Xu, Sheng; Yuan, Dajun; Guo, Rui; Wei, Yaguang; Wu, Wenzhuo

    2013-02-05

    In a method for growing a nanowire array, a photoresist layer is placed onto a nanowire growth layer configured for growing nanowires therefrom. The photoresist layer is exposed to a coherent light interference pattern that includes periodically alternately spaced dark bands and light bands along a first orientation. The photoresist layer exposed to the coherent light interference pattern along a second orientation, transverse to the first orientation. The photoresist layer developed so as to remove photoresist from areas corresponding to areas of intersection of the dark bands of the interference pattern along the first orientation and the dark bands of the interference pattern along the second orientation, thereby leaving an ordered array of holes passing through the photoresist layer. The photoresist layer and the nanowire growth layer are placed into a nanowire growth environment, thereby growing nanowires from the nanowire growth layer through the array of holes.

  17. Growth and characterization of bismuth telluride nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Picht, Oliver

    2010-05-26

    Polycrystalline Bi{sub 2}Te{sub 3} nanowires are electrochemically grown in ion track-etched polycarbonate membranes. Potentiostatic growth is demonstrated in templates of various thicknesses ranging from 10 to 100 {mu}m. The smallest observed nanowire diameters are 20 nm in thin membranes and approx. 140-180 nm in thicker membranes. The influence of the various deposition parameters on the nanowire growth rate is presented. Slower growth rates are attained by selective change of deposition potentials and lower temperatures. Nanowires synthesized at slower growth rates have shown to possess a higher degree of crystalline order and smoother surface contours. With respect to structural properties, X-ray diffraction and transmission electron microscopy verified the growth of Bi{sub 2}Te{sub 3} and evidenced the stability of specific properties, e.g. grain size or preferential orientation, with regard to variations in the deposition conditions. The interdependency of the fabrication parameters, i.e. temperature, deposition potential and nanochannel diameters, is demonstrated for wires grown in 30 {mu}m thick membranes. It is visible from diffraction analysis that texture is tunable by the growth conditions but depends also on the size of the nanochannels in the template. Both (015) and (110) reflexes are observed for the nanowire arrays. Energy dispersive X-ray analysis further points out that variation of nanochannel size could lead to a change in elemental composition of the nanowires. (orig.)

  18. Growth and characterization of bismuth telluride nanowires

    International Nuclear Information System (INIS)

    Picht, Oliver

    2010-01-01

    Polycrystalline Bi 2 Te 3 nanowires are electrochemically grown in ion track-etched polycarbonate membranes. Potentiostatic growth is demonstrated in templates of various thicknesses ranging from 10 to 100 μm. The smallest observed nanowire diameters are 20 nm in thin membranes and approx. 140-180 nm in thicker membranes. The influence of the various deposition parameters on the nanowire growth rate is presented. Slower growth rates are attained by selective change of deposition potentials and lower temperatures. Nanowires synthesized at slower growth rates have shown to possess a higher degree of crystalline order and smoother surface contours. With respect to structural properties, X-ray diffraction and transmission electron microscopy verified the growth of Bi 2 Te 3 and evidenced the stability of specific properties, e.g. grain size or preferential orientation, with regard to variations in the deposition conditions. The interdependency of the fabrication parameters, i.e. temperature, deposition potential and nanochannel diameters, is demonstrated for wires grown in 30 μm thick membranes. It is visible from diffraction analysis that texture is tunable by the growth conditions but depends also on the size of the nanochannels in the template. Both (015) and (110) reflexes are observed for the nanowire arrays. Energy dispersive X-ray analysis further points out that variation of nanochannel size could lead to a change in elemental composition of the nanowires. (orig.)

  19. High mobility ZnO nanowires for terahertz detection applications

    International Nuclear Information System (INIS)

    Liu, Huiqiang; Peng, Rufang; Chu, Shijin; Chu, Sheng

    2014-01-01

    An oxide nanowire material was utilized for terahertz detection purpose. High quality ZnO nanowires were synthesized and field-effect transistors were fabricated. Electrical transport measurements demonstrated the nanowire with good transfer characteristics and fairly high electron mobility. It is shown that ZnO nanowires can be used as building blocks for the realization of terahertz detectors based on a one-dimensional plasmon detection configuration. Clear terahertz wave (∼0.3 THz) induced photovoltages were obtained at room temperature with varying incidence intensities. Further analysis showed that the terahertz photoresponse is closely related to the high electron mobility of the ZnO nanowire sample, which suggests that oxide nanoelectronics may find useful terahertz applications.

  20. Oriented epitaxial TiO2 nanowires for water splitting

    Science.gov (United States)

    Hou, Wenting; Cortez, Pablo; Wuhrer, Richard; Macartney, Sam; Bozhilov, Krassimir N.; Liu, Rong; Sheppard, Leigh R.; Kisailus, David

    2017-06-01

    Highly oriented epitaxial rutile titanium dioxide (TiO2) nanowire arrays have been hydrothermally grown on polycrystalline TiO2 templates with their orientation dependent on the underlying TiO2 grain. Both the diameter and areal density of the nanowires were tuned by controlling the precursor concentration, and the template surface energy and roughness. Nanowire tip sharpness was influenced by precursor solubility and diffusivity. A new secondary ion mass spectrometer technique has been developed to install additional nucleation sites in single crystal TiO2 templates and the effect on nanowire growth was probed. Using the acquired TiO2 nanowire synthesis knowhow, an assortment of nanowire arrays were installed upon the surface of undoped TiO2 photo-electrodes and assessed for their photo-electrochemical water splitting performance. The key result obtained was that the presence of short and dispersed nanowire arrays significantly improved the photocurrent when the illumination intensity was increased from 100 to 200 mW cm-2. This is attributed to the alignment of the homoepitaxially grown nanowires to the [001] direction, which provides the fastest charge transport in TiO2 and an improved pathway for photo-holes to find water molecules and undertake oxidation. This result lays a foundation for achieving efficient water splitting under conditions of concentrated solar illumination.

  1. Resonant quantum efficiency enhancement of midwave infrared nBn photodetectors using one-dimensional plasmonic gratings

    International Nuclear Information System (INIS)

    Nolde, Jill A.; Kim, Chul Soo; Jackson, Eric M.; Ellis, Chase T.; Abell, Joshua; Glembocki, Orest J.; Canedy, Chadwick L.; Tischler, Joseph G.; Vurgaftman, Igor; Meyer, Jerry R.; Aifer, Edward H.; Kim, Mijin

    2015-01-01

    We demonstrate up to 39% resonant enhancement of the quantum efficiency (QE) of a low dark current nBn midwave infrared photodetector with a 0.5 μm InAsSb absorber layer. The enhancement was achieved by using a 1D plasmonic grating to couple incident light into plasmon modes propagating in the plane of the device. The plasmonic grating is composed of stripes of deposited amorphous germanium overlaid with gold. Devices with and without gratings were processed side-by-side for comparison of their QEs and dark currents. The peak external QE for a grating device was 29% compared to 22% for a mirror device when the illumination was polarized perpendicularly to the grating lines. Additional experiments determined the grating coupling efficiency by measuring the reflectance of analogous gratings deposited on bare GaSb substrates

  2. Single cell detection using a magnetic zigzag nanowire biosensor.

    Science.gov (United States)

    Huang, Hao-Ting; Ger, Tzong-Rong; Lin, Ya-Hui; Wei, Zung-Hang

    2013-08-07

    A magnetic zigzag nanowire device was designed for single cell biosensing. Nanowires with widths of 150, 300, 500, and 800 nm were fabricated on silicon trenches by electron beam lithography, electron beam evaporation, and lift-off processes. Magnetoresistance measurements were performed before and after the attachment of a single magnetic cell to the nanowires to characterize the magnetic signal change due to the influence of the magnetic cell. Magnetoresistance responses were measured in different magnetic field directions, and the results showed that this nanowire device can be used for multi-directional detection. It was observed that the highest switching field variation occurred in a 150 nm wide nanowire when the field was perpendicular to the substrate plane. On the other hand, the highest magnetoresistance ratio variation occurred in a 800 nm wide nanowire also when the field was perpendicular to the substrate plane. Besides, the trench-structured substrate proposed in this study can fix the magnetic cell to the sensor in a fluid environment, and the stray field generated by the corners of the magnetic zigzag nanowires has the function of actively attracting the magnetic cells for detection.

  3. The Role of Surface Passivation in Controlling Ge Nanowire Faceting.

    Science.gov (United States)

    Gamalski, A D; Tersoff, J; Kodambaka, S; Zakharov, D N; Ross, F M; Stach, E A

    2015-12-09

    In situ transmission electron microscopy observations of nanowire morphologies indicate that during Au-catalyzed Ge nanowire growth, Ge facets can rapidly form along the nanowire sidewalls when the source gas (here, digermane) flux is decreased or the temperature is increased. This sidewall faceting is accompanied by continuous catalyst loss as Au diffuses from the droplet to the wire surface. We suggest that high digermane flux and low temperatures promote effective surface passivation of Ge nanowires with H or other digermane fragments inhibiting diffusion and attachment of Au and Ge on the sidewalls. These results illustrate the essential roles of the precursor gas and substrate temperature in maintaining nanowire sidewall passivation, necessary to ensure the growth of straight, untapered, ⟨111⟩-oriented nanowires.

  4. Optical properties of nanowire metamaterials with gain

    DEFF Research Database (Denmark)

    Isidio de Lima, Joaquim Junior; Adam, Jost; Rego, Davi

    2016-01-01

    The transmittance, reflectance and absorption of a nanowire metamaterial with optical gain are numerically simulated and investigated. It is assumed that the metamaterial is represented by aligned silver nanowires embedded into a semiconductor matrix, made of either silicon or gallium phosphide....... The gain in the matrix is modeled by adding a negative imaginary part to the dielectric function of the semiconductor. It is found that the optical coefficients of the metamaterial depend on the gain magnitude in a non-trivial way: they can both increase and decrease with gain depending on the lattice...... constant of the metamaterial. This peculiar behavior is explained by the field redistribution between the lossy metal nanowires and the amplifying matrix material. These findings are significant for a proper design of nanowire metamaterials with low optical losses for diverse applications....

  5. Shear-driven phase transformation in silicon nanowires.

    Science.gov (United States)

    Vincent, L; Djomani, D; Fakfakh, M; Renard, C; Belier, B; Bouchier, D; Patriarche, G

    2018-03-23

    We report on an unprecedented formation of allotrope heterostructured Si nanowires by plastic deformation based on applied radial compressive stresses inside a surrounding matrix. Si nanowires with a standard diamond structure (3C) undergo a phase transformation toward the hexagonal 2H-allotrope. The transformation is thermally activated above 500 °C and is clearly driven by a shear-stress relief occurring in parallel shear bands lying on {115} planes. We have studied the influence of temperature and axial orientation of nanowires. The observations are consistent with a martensitic phase transformation, but the finding leads to clear evidence of a different mechanism of deformation-induced phase transformation in Si nanowires with respect to their bulk counterpart. Our process provides a route to study shear-driven phase transformation at the nanoscale in Si.

  6. The influence of tributary flow density differences on the hydrodynamic behavior of a confluent meander bend and implications for flow mixing

    Science.gov (United States)

    Herrero, Horacio S.; Díaz Lozada, José M.; García, Carlos M.; Szupiany, Ricardo N.; Best, Jim; Pagot, Mariana

    2018-03-01

    The goal of this study is to evaluate the influence of tributary flow density differences on hydrodynamics and mixing at a confluent meander bend. A detailed field characterization is performed using an Acoustic Doppler Current Profiler (ADCP) for quantification of the 3D flow field, flow discharge and bathymetry, as well as CTD measurements (conductivity, temperature, depth) to characterize the patterns of mixing. Satellite images of the confluence taken at complementary times to the field surveys were analyzed to evaluate the confluence hydrodynamics at different flow conditions. The results illustrate the differences in hydrodynamics and mixing length in relation to confluences with equal density tributaries. At low-density differences, and higher discharge ratio (Qr) between the two rivers, the flow is similar to equi-density confluent meander bends. In contrast, at high-density differences (low Qr), the tributary flow is confined to near the confluence but the density difference causes the flow to move across channel. In this case, the density difference causes the lateral spread of the tributary flow to be greater than at a greater Qr when the density difference is less. These results illustrate the potential importance of density differences between tributaries in determining the rate and spatial extent of mixing and sediment dispersal at confluent meander bends.

  7. Fabrication and morphology of uniaxially aligned perylenediimide nanowires

    Science.gov (United States)

    Machida, Shinjiro; Tanikatsu, Makoto; Itaya, Akira; Ikeda, Noriaki

    2017-06-01

    Uniaxial alignment of crystalline nanowires consisting of N,N‧-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8) was achieved on poly(tetrafluoroethylene) (PTFE) layers prepared by friction transfer method on a glass substrate. The nanowires were formed by spin-coating a trifluoroacetic acid (TFA) solution of PTCDI-C8 on the PTFE layers and were further grown under TFA vapor atmosphere. The morphology of the PTCDI-C8 nanowires were characterized using atomic force microscope (AFM) and fluorescence optical microscope with changing the dye concentration in the spin coating solution, annealing time in the TFA vapor, and substrate materials. The nanowires prepared on the PTFE layer on a silica-coated silicon or a mica substrate did not grow so well as those on the glass substrate. This result suggests that the surface roughness would affect the PTFE layer and the growth of the PTCDI nanowires.

  8. Direct electrodeposition of metal nanowires on electrode surface

    International Nuclear Information System (INIS)

    Gambirasi, Arianna; Cattarin, Sandro; Musiani, Marco; Vazquez-Gomez, Lourdes; Verlato, Enrico

    2011-01-01

    A method for decorating the surface of disk electrodes with metal nanowires is presented. Cu and Ni nanowires with diameters from 1.0 μm to 0.2 μm are directly deposited on the electrode surface using a polycarbonate membrane filter template maintained in contact with the metal substrate by the soft homogeneous pressure of a sponge soaked with electrolyte. The morphologic and structural properties of the deposit are characterized by scanning electron microscopy (SEM) and electron backscatter diffraction (EBSD). The latter shows that the head of nanowires with diameter of 0.4 μm is ordinarily polycrystalline, and that of nanowires with diameter of 0.2 μm is almost always monocrystalline for Cu and frequently also for Ni. Cyclic voltammetries and impedance investigations recorded in alkaline solutions at representative Ni electrodes decorated with nanowires provide consistent values of roughness factor, in the range 20-25.

  9. A detailed study of magnetization reversal in individual Ni nanowires

    KAUST Repository

    Vidal, Enrique Vilanova; Ivanov, Yurii P.; Mohammed, Hanan; Kosel, Jü rgen

    2015-01-01

    Magnetic nanowires have emerged as essential components for a broad range of applications. In many cases, a key property of these components is the switching field, which is studied as a function of the angle between the field and the nanowire. We found remarkable differences of up to 100% between the switching fields of different nanowires from the same fabrication batch. Our experimental results and micromagnetic simulations indicate that the nanowires exhibit a single domain behavior and that the switching mechanism includes vortex domain wall motion across the nanowire. The differences between the switching fields are attributed to different cross-sections of the nanowires, as found by electron microscopy. While a circular cross-section yields the smallest switching field values, any deviation from this shape results in an increase of the switching field. The shape of the nanowires' cross-sections is thus a critical parameter that has not been previously taken into account.

  10. A detailed study of magnetization reversal in individual Ni nanowires

    KAUST Repository

    Vidal, Enrique Vilanova

    2015-01-19

    Magnetic nanowires have emerged as essential components for a broad range of applications. In many cases, a key property of these components is the switching field, which is studied as a function of the angle between the field and the nanowire. We found remarkable differences of up to 100% between the switching fields of different nanowires from the same fabrication batch. Our experimental results and micromagnetic simulations indicate that the nanowires exhibit a single domain behavior and that the switching mechanism includes vortex domain wall motion across the nanowire. The differences between the switching fields are attributed to different cross-sections of the nanowires, as found by electron microscopy. While a circular cross-section yields the smallest switching field values, any deviation from this shape results in an increase of the switching field. The shape of the nanowires\\' cross-sections is thus a critical parameter that has not been previously taken into account.

  11. Growth of Ag-seeded III-V Nanowires and TEM Characterization

    DEFF Research Database (Denmark)

    Lindberg, Anna Helmi Caroline

    appropriate, the density and the vertical yield were obtained. The crystal structures for the grown nanowires have been investigated with TEM.We have also performed additional growths to further understand exactly how the nanowire growth proceeds as well as to understand the limitations of using Ag as a seed......This thesis deals with growth and characterization of GaAs and InAs nanowires. Today Au nanoparticle-seeding together with self-catalyzing are the dominating techniques to grow III-V nanowires with molecular beam epitaxy. In this thesis we instead investigate the possibility to use Ag as seed...... particle for growth of GaAs and InAs nanowires. The aim with the experiments performed has been to conclude whether Ag can be used to nucleate and grow nanowires on III-V substrates with molecular beam epitaxy. To investigate this we have performed growths of GaAs nanowires on GaAs(111)B and GaAs(100...

  12. Synthesis of the cactus-like silicon nanowires/tungsten oxide nanowires composite for room-temperature NO{sub 2} gas sensor

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Weiyi, E-mail: zhangweiyi@tju.edu.cn [School of Electronic Information Engineering, Tianjin University, Tianjin, 300072 (China); Hu, Ming [School of Electronic Information Engineering, Tianjin University, Tianjin, 300072 (China); Key Laboratory for Advanced Ceramics and Machining Technology, Ministry of Education, School of Materials Science and Engineering, Tianjin University, Tianjin 300072 (China); Liu, Xing; Wei, Yulong; Li, Na [School of Electronic Information Engineering, Tianjin University, Tianjin, 300072 (China); Qin, Yuxiang, E-mail: qinyuxiang@tju.edu.cn [School of Electronic Information Engineering, Tianjin University, Tianjin, 300072 (China); Key Laboratory for Advanced Ceramics and Machining Technology, Ministry of Education, School of Materials Science and Engineering, Tianjin University, Tianjin 300072 (China)

    2016-09-15

    In the present work, the tungsten oxide (WO{sub 3}) nanowires functionalized silicon nanowires (SiNWs) with cactus-like structure has been successfully synthesized for room-temperature NO{sub 2} detection. The novel nanocomposite was fabricated by metal-assisted chemical etching (MACE) and thermal annealing of tungsten film. The WO{sub 3} nanowires were evenly distributed from the upper to the lower part of the SiNWs, indicating excellent uniformity which is conducive to adsorption and desorption of gas molecules. The gas-sensing properties have been examined by measuring the resistance change towards 0.25–5 ppm NO{sub 2} gas. At room temperature, which is the optimum working temperature, the SiNWs/WO{sub 3} nanowires composite showed two-times higher NO{sub 2} response than that of the bare SiNWs at 2 ppm NO{sub 2}. On the contrary, the responses of composite sensors to high concentrations of other reducing gases were very low, indicating excellent selectivity. Simultaneously, the composite sensors exhibited good sensing repeatability and stability. The enhancement in gas sensing properties may be attributed to the change in width of the space charge region, which is similar to the behavior of p-n junctions under forward bias, in the high-density p-n heterojunction structure formed between SiNWs and WO{sub 3} nanowires. - Highlights: • SiNWs/WO{sub 3} nanowires composite with cactus-like structure is synthesized. • The morphology of WO{sub 3} nanowires depends on the thermal annealing temperature. • The nanocomposite sensor exhibit better gas response than that of bare SiNWs. • The gas sensing mechanism is discussed using p-n heterojunction theory.

  13. Electroless Fabrication of Cobalt Alloys Nanowires within Alumina Template

    Directory of Open Access Journals (Sweden)

    Nazila Dadvand

    2007-01-01

    Full Text Available A new method of nanowire fabrication based on electroless deposition process is described. The method is novel compared to the current electroless procedure used in making nanowires as it involves growing nanowires from the bottom up. The length of the nanowires was controlled at will simply by adjusting the deposition time. The nanowires were fabricated within the nanopores of an alumina template. It was accomplished by coating one side of the template by a thin layer of palladium in order to activate the electroless deposition within the nanopores from bottom up. However, prior to electroless deposition process, the template was pretreated with a suitable wetting agent in order to facilitate the penetration of the plating solution through the pores. As well, the electroless deposition process combined with oblique metal evaporation process within a prestructured silicon wafer was used in order to fabricate long nanowires along one side of the grooves within the wafer.

  14. Well-dispersed gold nanowire suspension for assembly application

    International Nuclear Information System (INIS)

    Xu Cailing; Zhang Li; Zhang Haoli; Li Hulin

    2005-01-01

    A method for fabricating well-dispersed nanowire suspension has been demonstrated in the paper. Thin gold nanowires were prepared by template synthesis, and then functionalized with sulphonate group-terminated thiols before suspended in different solvents. The degree of aggregation of the obtained suspension was evaluated with transmission electron microscopy (TEM) and UV-vis spectroscopy. It was found that the degree of aggregation was predominated by the solvents, and the best degree of dispersion was obtained when isopropyl alcohol (IPA) was used as the solvent. The gold nanowires from the suspension can be selectively assembled onto chemically patterned substrates. This well-dispersed nanowire suspension is potentially useful for fabricating novel nanodevices

  15. Controlling nanowire emission profile using conical taper

    DEFF Research Database (Denmark)

    Gregersen, Niels; Nielsen, Torben Roland; Mørk, Jesper

    2008-01-01

    The influence of a conical taper on nanowire light emission is studied. For nanowires with divergent output beams, the introduction of tapers improves the emission profile and increase the collection efficiency of the detection optics....

  16. Poly(1-(2-carboxyethyl)pyrrole)/polypyrrole composite nanowires for glucose biosensor

    International Nuclear Information System (INIS)

    Jiang Hairong; Zhang Aifeng; Sun Yanan; Ru Xiaoning; Ge Dongtao; Shi Wei

    2012-01-01

    A novel glucose biosensor based on poly(1-(2-carboxyethyl)pyrrole) (PPyCOOH)/polypyrrole (PPy) composite nanowires was developed by immobilizing glucose oxidase (GOD) on the nanowires via covalent linkages. The PPyCOOH/PPy composite nanowires were fabricated by a facile two-step electrochemical synthesis route. First, PPy nanowires were synthesized in phosphate buffer solution using organic sulfonic acid, p-toluenesulfonate acid, as soft-template. Then, PPyCOOH/PPy composite nanowires were obtained by polymerizing 1-(2-carboxyethyl)pyrrole onto PPy nanowires via electrochemical method. Scanning electron microscopic, FT-IR spectra, X-ray photoelectron spectroscopy and cyclic voltammograms were used to characterize the structural and electrical behaviors of the composite nanowires. The PPyCOOH/PPy composite nanowires exhibited uniform diameter, high reactive site (-COOH), large specific surface, excellent electroactivity and good adhesion to electrode. The glucose biosensor was constructed by covalently coupling GOD to the composite nanowires. The biosensor response was rapid (5 s), highly sensitive (33.6 μA mM −1 cm −2 ) with a wide linear range (up to 10.0 mM) and low detection limit (0.63 μM); it also exhibited high stability and specificity to glucose. The attractive electrochemical and structural properties of PPyCOOH/PPy composite nanowires suggested potential application for electrocatalysis and biosensor.

  17. Template-assisted fabrication of tin and antimony based nanowire arrays

    Science.gov (United States)

    Zaraska, Leszek; Kurowska, Elżbieta; Sulka, Grzegorz D.; Jaskuła, Marian

    2012-10-01

    Antimony nanowires with diameters ranging from 35 nm to 320 nm were successfully prepared by simple, galvanostatic electrodeposition inside the pores of anodic alumina membranes from a citrate based electrolyte. The use of the potassium antimonyl tartrate electrolyte for electrodeposition results in the formation of Sb/Sb2O3 nanowires. The structural features of the nanowire arrays were investigated by FE-SEM, and the nanowire composition was confirmed by EDS and XRD measurements. A distinct peak at about 27.5° in the XRD pattern recorded for nanowires formed in the tartrate electrolyte was attributed to the presence of co-deposited Sb2O3. Three types of dense arrays of Sn-SnSb nanowires with diameters ranging from 82 nm to 325 nm were also synthesized by DC galvanostatic electrodeposition into the anodic aluminum oxide (AAO) membranes for the first time. Only Sn and SnSb peaks appeared in the XRD pattern and both phases seem to have a relatively high degree of crystallinity. The influence of current density applied during electrodeposition on the composition of nanowires was investigated. It was found that the Sb content in fabricated nanowires decreases with increasing current density. The diameters of all synthesized nanowires roughly correspond to the dimensions of the nanochannels of AAO templates used for electrodeposition.

  18. Non-chemotoxic induction of cancer cell death using magnetic nanowires

    KAUST Repository

    Contreras, Maria F.; Sougrat, Rachid; Zaher, Amir Omar; Ravasi, Timothy; Kosel, Jü rgen

    2015-01-01

    In this paper, we show that magnetic nanowires with weak magnetic fields and low frequencies can induce cell death via a mechanism that does not involve heat production. We incubated colon cancer cells with two concentrations (2.4 and 12 μg/mL) of nickel nanowires that were 35 nm in diameter and exposed the cells and nanowires to an alternating magnetic field (0.5 mT and 1 Hz or 1 kHz) for 10 or 30 minutes. This low-power field exerted a force on the magnetic nanowires, causing a mechanical disturbance to the cells. Transmission electron microscopy images showed that the nanostructures were internalized into the cells within 1 hour of incubation. Cell viability studies showed that the magnetic field and the nanowires separately had minor deleterious effects on the cells; however, when combined, the magnetic field and nanowires caused the cell viability values to drop by up to 39%, depending on the strength of the magnetic field and the concentration of the nanowires. Cell membrane leakage experiments indicated membrane leakage of 20%, suggesting that cell death mechanisms induced by the nanowires and magnetic field involve some cell membrane rupture. Results suggest that magnetic nanowires can kill cancer cells. The proposed process requires simple and low-cost equipment with exposure to only very weak magnetic fields for short time periods. © 2015 Contreras et al.

  19. Non-chemotoxic induction of cancer cell death using magnetic nanowires

    KAUST Repository

    Contreras, Maria F.

    2015-03-01

    In this paper, we show that magnetic nanowires with weak magnetic fields and low frequencies can induce cell death via a mechanism that does not involve heat production. We incubated colon cancer cells with two concentrations (2.4 and 12 μg/mL) of nickel nanowires that were 35 nm in diameter and exposed the cells and nanowires to an alternating magnetic field (0.5 mT and 1 Hz or 1 kHz) for 10 or 30 minutes. This low-power field exerted a force on the magnetic nanowires, causing a mechanical disturbance to the cells. Transmission electron microscopy images showed that the nanostructures were internalized into the cells within 1 hour of incubation. Cell viability studies showed that the magnetic field and the nanowires separately had minor deleterious effects on the cells; however, when combined, the magnetic field and nanowires caused the cell viability values to drop by up to 39%, depending on the strength of the magnetic field and the concentration of the nanowires. Cell membrane leakage experiments indicated membrane leakage of 20%, suggesting that cell death mechanisms induced by the nanowires and magnetic field involve some cell membrane rupture. Results suggest that magnetic nanowires can kill cancer cells. The proposed process requires simple and low-cost equipment with exposure to only very weak magnetic fields for short time periods. © 2015 Contreras et al.

  20. Generic nano-imprint process for fabrication of nanowire arrays

    Energy Technology Data Exchange (ETDEWEB)

    Pierret, Aurelie; Hocevar, Moira; Algra, Rienk E; Timmering, Eugene C; Verschuuren, Marc A; Immink, George W G; Verheijen, Marcel A; Bakkers, Erik P A M [Philips Research Laboratories Eindhoven, High Tech Campus 11, 5656 AE Eindhoven (Netherlands); Diedenhofen, Silke L [FOM Institute for Atomic and Molecular Physics c/o Philips Research Laboratories, High Tech Campus 4, 5656 AE Eindhoven (Netherlands); Vlieg, E, E-mail: e.p.a.m.bakkers@tue.nl [IMM, Solid State Chemistry, Radboud University Nijmegen, Heyendaalseweg 135, 6525 AJ Nijmegen (Netherlands)

    2010-02-10

    A generic process has been developed to grow nearly defect-free arrays of (heterostructured) InP and GaP nanowires. Soft nano-imprint lithography has been used to pattern gold particle arrays on full 2 inch substrates. After lift-off organic residues remain on the surface, which induce the growth of additional undesired nanowires. We show that cleaning of the samples before growth with piranha solution in combination with a thermal anneal at 550 deg. C for InP and 700 deg. C for GaP results in uniform nanowire arrays with 1% variation in nanowire length, and without undesired extra nanowires. Our chemical cleaning procedure is applicable to other lithographic techniques such as e-beam lithography, and therefore represents a generic process.

  1. Non-chemotoxic induction of cancer cell death using magnetic nanowires

    Directory of Open Access Journals (Sweden)

    Contreras MF

    2015-03-01

    Full Text Available Maria F Contreras,1 Rachid Sougrat,2 Amir Zaher,3 Timothy Ravasi,1,3 Jürgen Kosel3 1Division of Biological and Environmental Sciences and Engineering, 2Advanced Nanofabrication Imaging and Characterization, 3Division of Computer, Electrical and Mathematical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal, Kingdom of Saudi Arabia Abstract: In this paper, we show that magnetic nanowires with weak magnetic fields and low frequencies can induce cell death via a mechanism that does not involve heat production. We incubated colon cancer cells with two concentrations (2.4 and 12 µg/mL of nickel nanowires that were 35 nm in diameter and exposed the cells and nanowires to an alternating magnetic field (0.5 mT and 1 Hz or 1 kHz for 10 or 30 minutes. This low-power field exerted a force on the magnetic nanowires, causing a mechanical disturbance to the cells. Transmission electron microscopy images showed that the nanostructures were internalized into the cells within 1 hour of incubation. Cell viability studies showed that the magnetic field and the nanowires separately had minor deleterious effects on the cells; however, when combined, the magnetic field and nanowires caused the cell viability values to drop by up to 39%, depending on the strength of the magnetic field and the concentration of the nanowires. Cell membrane leakage experiments indicated membrane leakage of 20%, suggesting that cell death mechanisms induced by the nanowires and magnetic field involve some cell membrane rupture. Results suggest that magnetic nanowires can kill cancer cells. The proposed process requires simple and low-cost equipment with exposure to only very weak magnetic fields for short time periods. Keywords: cell death induction, low frequency alternating magnetic field, nanomedicine, nanowire internalization, nickel nanowires

  2. Long term stability of nanowire nanoelectronics in physiological environments.

    Science.gov (United States)

    Zhou, Wei; Dai, Xiaochuan; Fu, Tian-Ming; Xie, Chong; Liu, Jia; Lieber, Charles M

    2014-03-12

    Nanowire nanoelectronic devices have been exploited as highly sensitive subcellular resolution detectors for recording extracellular and intracellular signals from cells, as well as from natural and engineered/cyborg tissues, and in this capacity open many opportunities for fundamental biological research and biomedical applications. Here we demonstrate the capability to take full advantage of the attractive capabilities of nanowire nanoelectronic devices for long term physiological studies by passivating the nanowire elements with ultrathin metal oxide shells. Studies of Si and Si/aluminum oxide (Al2O3) core/shell nanowires in physiological solutions at 37 °C demonstrate long-term stability extending for at least 100 days in samples coated with 10 nm thick Al2O3 shells. In addition, investigations of nanowires configured as field-effect transistors (FETs) demonstrate that the Si/Al2O3 core/shell nanowire FETs exhibit good device performance for at least 4 months in physiological model solutions at 37 °C. The generality of this approach was also tested with in studies of Ge/Si and InAs nanowires, where Ge/Si/Al2O3 and InAs/Al2O3 core/shell materials exhibited stability for at least 100 days in physiological model solutions at 37 °C. In addition, investigations of hafnium oxide-Al2O3 nanolaminated shells indicate the potential to extend nanowire stability well beyond 1 year time scale in vivo. These studies demonstrate that straightforward core/shell nanowire nanoelectronic devices can exhibit the long term stability needed for a range of chronic in vivo studies in animals as well as powerful biomedical implants that could improve monitoring and treatment of disease.

  3. Purcell effect for finite-length metal-coated and metal nanowires

    DEFF Research Database (Denmark)

    Filonenko, Konstantin V.; Willatzen, Morten; Bordo, Vladimir G.

    2014-01-01

    We investigate the modification (enhancement and suppression) of the spontaneous emission rate of a dipole emitter in two configurations: inside a finite-length semiconductor nanowire surrounded by bulk metal and in the vicinity of a finite metal nanowire. Our analysis is based on a first......-principle approach, which is reduced to a seminumeric one in the limit of large nanowire aspect ratios. The numerical calculations are carried out for an emitter in a GaAs nanowire embedded in Ag or Au and for that nearby an Ag or Au nanowire in vacuum or dielectric. We consider in detail the Purcell and β factors...

  4. High-Temperature Characteristics of an InAsSb/AlAsSb n+Bn Detector

    Science.gov (United States)

    Ting, David Z.; Soibel, Alexander; Höglund, Linda; Hill, Cory J.; Keo, Sam A.; Fisher, Anita; Gunapala, Sarath D.

    2016-09-01

    The high-temperature characteristics of a mid-wavelength infrared (MWIR) detector based on the Maimon-Wicks InAsSb/AlAsSb nBn architecture was analyzed. The dark current characteristics are examined in reference to recent minority carrier lifetime results. The difference between the responsivity and absorption quantum efficiency (QE) at shorter wavelengths is clarified in terms of preferential absorption of higher-energy photons in the top contact layer, which cannot provide reverse-bias photo-response due to the AlAsSb electron blocking layer and strong recombination. Although the QE does not degrade when the operating temperature increases to 325 K, the turn-on bias becomes larger at higher temperatures. This behavior was originally attributed to the change in the valence band alignment between the absorber and top contact layers caused by the shift in Fermi level with temperature. In this work, we demonstrated the inadequacy of the original description, and offer a more likely explanation based on temperature-dependent band-bending effects.

  5. Silicon nanowires: structure and properties

    International Nuclear Information System (INIS)

    Nezhdanov, A.V.; Mashin, A.I.; Razuvaev, A.G.; Ershov, A.V.; Ignatov, S.K.

    2006-01-01

    An attempt to grow silicon nanowires has been made by electron beam evaporation on highly oriented pyrolytic substrate. Needle-like objects are located along the normal to a substrate (density 2 x 10 11 cm -2 ). For modeling quasi-one-dimensional objects calculations of nuclear structure and energy spectra have been accomplished. A fullerene-like structure Si 24 is proposed as a basic atomic configuration of silicon nanowires [ru

  6. InGaAs/GaAs (110) quantum dot formation via step meandering

    Energy Technology Data Exchange (ETDEWEB)

    Diez-Merino, Laura; Tejedor, Paloma [Department of Nanostructures and Surfaces, Instituto de Ciencia de Materiales de Madrid, CSIC, Sor Juana Ines de la Cruz 3, 28049-Madrid (Spain)

    2011-07-01

    InGaAs (110) semiconductor quantum dots (QDs) offer very promising prospects as a material base for a new generation of high-speed spintronic devices, such as single electron transistors for quantum computing. However, the spontaneous formation of InGaAs QDs is prevented by two-dimensional (2D) layer-by-layer growth on singular GaAs (110) substrates. In this work we have studied, by using atomic force microscopy and photoluminescence spectroscopy (PL), the growth of InGaAs/GaAs QDs on GaAs (110) stepped substrates by molecular beam epitaxy (MBE), and the modification of the adatom incorporation kinetics to surface steps in the presence of chemisorbed atomic hydrogen. The as-grown QDs exhibit lateral dimensions below 100 nm and emission peaks in the 1.35-1.37 eV range. It has been found that a step meandering instability derived from the preferential attachment of In adatoms to [110]-step edges relative to [11n]-type steps plays a key role in the destabilization of 2D growth that leads to 3D mound formation on both conventional and H-terminated vicinal substrates. In the latter case, the driving force for 3D growth via step meandering is enhanced by H-induced upward mass transport in addition to the lower energy cost associated with island formation on H-terminated substrates, which results in a high density array of InGaAs/GaAs dots selectively nucleated on the terrace apices with reduced lateral dimensions and improved PL efficiency relative to those of conventional MBE-grown samples.

  7. InGaAs/GaAs (110) quantum dot formation via step meandering

    International Nuclear Information System (INIS)

    Diez-Merino, Laura; Tejedor, Paloma

    2011-01-01

    InGaAs (110) semiconductor quantum dots (QDs) offer very promising prospects as a material base for a new generation of high-speed spintronic devices, such as single electron transistors for quantum computing. However, the spontaneous formation of InGaAs QDs is prevented by two-dimensional (2D) layer-by-layer growth on singular GaAs (110) substrates. In this work we have studied, by using atomic force microscopy and photoluminescence spectroscopy (PL), the growth of InGaAs/GaAs QDs on GaAs (110) stepped substrates by molecular beam epitaxy (MBE), and the modification of the adatom incorporation kinetics to surface steps in the presence of chemisorbed atomic hydrogen. The as-grown QDs exhibit lateral dimensions below 100 nm and emission peaks in the 1.35-1.37 eV range. It has been found that a step meandering instability derived from the preferential attachment of In adatoms to [110]-step edges relative to [11n]-type steps plays a key role in the destabilization of 2D growth that leads to 3D mound formation on both conventional and H-terminated vicinal substrates. In the latter case, the driving force for 3D growth via step meandering is enhanced by H-induced upward mass transport in addition to the lower energy cost associated with island formation on H-terminated substrates, which results in a high density array of InGaAs/GaAs dots selectively nucleated on the terrace apices with reduced lateral dimensions and improved PL efficiency relative to those of conventional MBE-grown samples.

  8. Quantification of nanowire uptake by live cells

    KAUST Repository

    Margineanu, Michael B.

    2015-05-01

    Nanostructures fabricated by different methods have become increasingly important for various applications at the cellular level. In order to understand how these nanostructures “behave” and for studying their internalization kinetics, several attempts have been made at tagging and investigating their interaction with living cells. In this study, magnetic iron nanowires with an iron oxide layer are coated with (3-Aminopropyl)triethoxysilane (APTES), and subsequently labeled with a fluorogenic pH-dependent dye pHrodo™ Red, covalently bound to the aminosilane surface. Time-lapse live imaging of human colon carcinoma HCT 116 cells interacting with the labeled iron nanowires is performed for 24 hours. As the pHrodo™ Red conjugated nanowires are non-fluorescent outside the cells but fluoresce brightly inside, internalized nanowires are distinguished from non-internalized ones and their behavior inside the cells can be tracked for the respective time length. A machine learning-based computational framework dedicated to automatic analysis of live cell imaging data, Cell Cognition, is adapted and used to classify cells with internalized and non-internalized nanowires and subsequently determine the uptake percentage by cells at different time points. An uptake of 85 % by HCT 116 cells is observed after 24 hours incubation at NW-to-cell ratios of 200. While the approach of using pHrodo™ Red for internalization studies is not novel in the literature, this study reports for the first time the utilization of a machine-learning based time-resolved automatic analysis pipeline for quantification of nanowire uptake by cells. This pipeline has also been used for comparison studies with nickel nanowires coated with APTES and labeled with pHrodo™ Red, and another cell line derived from the cervix carcinoma, HeLa. It has thus the potential to be used for studying the interaction of different types of nanostructures with potentially any live cell types.

  9. Atomic-Resolution Spectrum Imaging of Semiconductor Nanowires.

    Science.gov (United States)

    Zamani, Reza R; Hage, Fredrik S; Lehmann, Sebastian; Ramasse, Quentin M; Dick, Kimberly A

    2018-03-14

    Over the past decade, III-V heterostructure nanowires have attracted a surge of attention for their application in novel semiconductor devices such as tunneling field-effect transistors (TFETs). The functionality of such devices critically depends on the specific atomic arrangement at the semiconductor heterointerfaces. However, most of the currently available characterization techniques lack sufficient spatial resolution to provide local information on the atomic structure and composition of these interfaces. Atomic-resolution spectrum imaging by means of electron energy-loss spectroscopy (EELS) in the scanning transmission electron microscope (STEM) is a powerful technique with the potential to resolve structure and chemical composition with sub-angstrom spatial resolution and to provide localized information about the physical properties of the material at the atomic scale. Here, we demonstrate the use of atomic-resolution EELS to understand the interface atomic arrangement in three-dimensional heterostructures in semiconductor nanowires. We observed that the radial interfaces of GaSb-InAs heterostructure nanowires are atomically abrupt, while the axial interface in contrast consists of an interfacial region where intermixing of the two compounds occurs over an extended spatial region. The local atomic configuration affects the band alignment at the interface and, hence, the charge transport properties of devices such as GaSb-InAs nanowire TFETs. STEM-EELS thus represents a very promising technique for understanding nanowire physical properties, such as differing electrical behavior across the radial and axial heterointerfaces of GaSb-InAs nanowires for TFET applications.

  10. Growth and properties of In(Ga)As nanowires on silicon

    International Nuclear Information System (INIS)

    Hertenberger, Simon

    2012-01-01

    In this thesis the integration of III-V semiconductor nanowires on silicon (Si) platform by molecular beam epitaxy (MBE) is investigated. All nanowires are grown without the use of foreign catalysts such as Au to achieve high purity material. First, InAs nanowires are grown in a self-assembled manner on SiO x -masked Si(111) where pinholes in the silicon oxide serve as nucleation spots for the nanowires. This leads to the growth of vertically aligned, (111)-oriented nanowires with hexagonal cross-section. Based on this simple process, the entire growth parameter window is investigated for InAs nanowires, revealing an extremely large growth temperature range from 380 C to 580 C and growth rates as large as 6 μ/h. Complex quantitative in-situ line-of-sight quadrupole mass spectrometry experiments during nanowire growth and post-growth thermal decomposition studies support these findings and indicate a very high thermal stability up to >540 C for InAs nanowires. Furthermore, the influence of the As/In ratio on the nanowire growth is studied revealing two distinct growth regimes, i.e., an In-rich regime for lower As fluxes and an As-rich regime for larger As fluxes, where the latter shows characteristic saturation of the nanowire aspect ratio. For the catalyst-free growth, detailed investigation of the growth mechanism is performed via a combination of in-situ reflection high-energy electron diffraction (RHEED) and ex-situ scanning and transmission electron microscopy (SEM,TEM). An abrupt onset of nanowire growth is observed in RHEED intensity and in-plane lattice parameter evolution. Furthermore, completely droplet-free nanowires, continuous radial growth, constant vertical growth rate and growth interruption experiments suggest a vapor-solid growth mode for all investigated nanowire samples. Moreover, site-selective (positioned) growth of InAs nanowires on pre-patterned SiO 2 masked Si(111) substrates is demonstrated which is needed for ultimate control of nanowire

  11. Growth and properties of In(Ga)As nanowires on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Hertenberger, Simon

    2012-10-15

    In this thesis the integration of III-V semiconductor nanowires on silicon (Si) platform by molecular beam epitaxy (MBE) is investigated. All nanowires are grown without the use of foreign catalysts such as Au to achieve high purity material. First, InAs nanowires are grown in a self-assembled manner on SiO{sub x}-masked Si(111) where pinholes in the silicon oxide serve as nucleation spots for the nanowires. This leads to the growth of vertically aligned, (111)-oriented nanowires with hexagonal cross-section. Based on this simple process, the entire growth parameter window is investigated for InAs nanowires, revealing an extremely large growth temperature range from 380 C to 580 C and growth rates as large as 6 μ/h. Complex quantitative in-situ line-of-sight quadrupole mass spectrometry experiments during nanowire growth and post-growth thermal decomposition studies support these findings and indicate a very high thermal stability up to >540 C for InAs nanowires. Furthermore, the influence of the As/In ratio on the nanowire growth is studied revealing two distinct growth regimes, i.e., an In-rich regime for lower As fluxes and an As-rich regime for larger As fluxes, where the latter shows characteristic saturation of the nanowire aspect ratio. For the catalyst-free growth, detailed investigation of the growth mechanism is performed via a combination of in-situ reflection high-energy electron diffraction (RHEED) and ex-situ scanning and transmission electron microscopy (SEM,TEM). An abrupt onset of nanowire growth is observed in RHEED intensity and in-plane lattice parameter evolution. Furthermore, completely droplet-free nanowires, continuous radial growth, constant vertical growth rate and growth interruption experiments suggest a vapor-solid growth mode for all investigated nanowire samples. Moreover, site-selective (positioned) growth of InAs nanowires on pre-patterned SiO{sub 2} masked Si(111) substrates is demonstrated which is needed for ultimate control of

  12. Flexible powder electroluminescent device on silver nanowire electrode

    International Nuclear Information System (INIS)

    Park, K.W.; Jeong, H.S.; Park, J.H.; Deressa, G.; Jeong, Y.T.; Lim, K.T.; Park, J.H.; Lee, S.H.; Kim, J.S.

    2015-01-01

    We have demonstrated the flexible AC powder electroluminescent device based on Ag nanowire electrode. The Ag nanowire electrode showed the nanowire morphology of 20 nm in diameter and 15 μm in length, the transmittance of 87%, and the sheet resistance of 50 Ω/sq, and the higher flexibility than the conventional ITO substrate. The electroluminescence spectra of the Ag nanowire-based device in all frequency and voltage ranges were almost similar with the ITO-based device. In comparison with the ITO-based device, the luminous efficiency of the Ag nanowire-based device was almost same as 1.53 lm/W. - Highlights: • Flexibility of Ag NW substrate was higher than ITO substrate. • EL intensity of Ag NW-based EL device was almost similar with ITO-based EL device. • Charge density and turn-on voltage of Ag NW-based EL device were a little larger than ITO-based EL device

  13. Flexible powder electroluminescent device on silver nanowire electrode

    Energy Technology Data Exchange (ETDEWEB)

    Park, K.W.; Jeong, H.S.; Park, J.H.; Deressa, G.; Jeong, Y.T.; Lim, K.T. [Department of Display Science and Engineering, Pukyong National University, Busan 608-737 (Korea, Republic of); Park, J.H. [AIDEN company, Cheongju-si 361-911 (Korea, Republic of); Lee, S.H. [R& D Business Lab, Hyosung Corporation, Anyang 431-080 (Korea, Republic of); Kim, J.S., E-mail: jsukim@pknu.ac.kr [Department of Display Science and Engineering, Pukyong National University, Busan 608-737 (Korea, Republic of)

    2015-09-15

    We have demonstrated the flexible AC powder electroluminescent device based on Ag nanowire electrode. The Ag nanowire electrode showed the nanowire morphology of 20 nm in diameter and 15 μm in length, the transmittance of 87%, and the sheet resistance of 50 Ω/sq, and the higher flexibility than the conventional ITO substrate. The electroluminescence spectra of the Ag nanowire-based device in all frequency and voltage ranges were almost similar with the ITO-based device. In comparison with the ITO-based device, the luminous efficiency of the Ag nanowire-based device was almost same as 1.53 lm/W. - Highlights: • Flexibility of Ag NW substrate was higher than ITO substrate. • EL intensity of Ag NW-based EL device was almost similar with ITO-based EL device. • Charge density and turn-on voltage of Ag NW-based EL device were a little larger than ITO-based EL device.

  14. Preparation and characterization of electrodeposited cobalt nanowires

    International Nuclear Information System (INIS)

    Irshad, M. I.; Mohamed, N. M.; Ahmad, F.; Abdullah, M. Z.

    2014-01-01

    Electrochemical deposition technique has been used to deposit cobalt nanowires into the nano sized channels of Anodized Aluminium Oxide (AAO) templates. CoCl 2 Ðœ‡6H2O salt solution was used, which was buffered with H 3 BO 3 and acidified by dilute H 2 SO 4 to increase the plating life and control pH of the solution. Thin film of copper around 150 nm thick on one side of AAO template coated by e-beam evaporation system served as cathode to create electrical contact. FESEM analysis shows that the as-deposited nanowires are highly aligned, parallel to one another and have high aspect ratio with a reasonably high pore-filing factor. The TEM results show that electrodeposited cobalt nanowires are crystalline in nature. The Hysteresis loop shows the magnetization properties for in and out of plane configuration. The in plane saturation magnetization (Ms) is lower than out of plane configuration because of the easy axis of magnetization is perpendicular to nanowire axis. These magnetic nanowires could be utilized for applications such as spintronic devices, high density magnetic storage, and magnetic sensor applications

  15. Preparation and characterization of electrodeposited cobalt nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Irshad, M. I., E-mail: imrancssp@gmail.com; Mohamed, N. M., E-mail: noranimuti-mohamed@petronas.com.my [Department of Fundamental and Applied Sciences, Universiti Teknologi PETRONAS, 31750 PERAK (Malaysia); Ahmad, F., E-mail: faizahmad@petronas.com.my; Abdullah, M. Z., E-mail: zaki-abdullah@petronas.com.my [Department of Mechanical Engineering, Universiti Teknologi PETRONAS, 31750 PERAK (Malaysia)

    2014-10-24

    Electrochemical deposition technique has been used to deposit cobalt nanowires into the nano sized channels of Anodized Aluminium Oxide (AAO) templates. CoCl{sub 2}Ðœ‡6H2O salt solution was used, which was buffered with H{sub 3}BO{sub 3} and acidified by dilute H{sub 2}SO{sub 4} to increase the plating life and control pH of the solution. Thin film of copper around 150 nm thick on one side of AAO template coated by e-beam evaporation system served as cathode to create electrical contact. FESEM analysis shows that the as-deposited nanowires are highly aligned, parallel to one another and have high aspect ratio with a reasonably high pore-filing factor. The TEM results show that electrodeposited cobalt nanowires are crystalline in nature. The Hysteresis loop shows the magnetization properties for in and out of plane configuration. The in plane saturation magnetization (Ms) is lower than out of plane configuration because of the easy axis of magnetization is perpendicular to nanowire axis. These magnetic nanowires could be utilized for applications such as spintronic devices, high density magnetic storage, and magnetic sensor applications.

  16. High-temperature superconducting nanowires for photon detection

    Energy Technology Data Exchange (ETDEWEB)

    Arpaia, R. [Quantum Device Physics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, S-41296 Göteborg (Sweden); CNR SPIN Institute – Superconductors, Innovative Materials and Devices, UOS–Napoli, I-80100 Napoli (Italy); Dipartimento di Fisica, Università degli Studi di Napoli ‘Federico II’, I-80125 Napoli (Italy); Ejrnaes, M. [CNR SPIN Institute – Superconductors, Innovative Materials and Devices, UOS–Napoli, I-80100 Napoli (Italy); Parlato, L. [CNR SPIN Institute – Superconductors, Innovative Materials and Devices, UOS–Napoli, I-80100 Napoli (Italy); Dipartimento di Fisica, Università degli Studi di Napoli ‘Federico II’, I-80125 Napoli (Italy); Tafuri, F. [CNR SPIN Institute – Superconductors, Innovative Materials and Devices, UOS–Napoli, I-80100 Napoli (Italy); Dipartimento di Ingegneria Industriale e dell’Informazione, Seconda Università di Napoli, I-81031 Aversa, CE (Italy); Cristiano, R. [CNR SPIN Institute – Superconductors, Innovative Materials and Devices, UOS–Napoli, I-80100 Napoli (Italy); Golubev, D. [Low Temperature Laboratory (OVLL), Aalto University School of Science, P.O. Box 13500, FI-00076 Aalto (Finland); Sobolewski, Roman, E-mail: roman.sobolewski@rochester.edu [Institute of Electron Technology, PL-02668 Warszawa (Poland); Department of Electrical and Computer Engineering and Laboratory for Laser Energetics, University of Rochester, NY 14627-0231 (United States); Bauch, T.; Lombardi, F. [Quantum Device Physics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, S-41296 Göteborg (Sweden); and others

    2015-02-15

    Highlights: • Homogeneous YBCO nanowires have been fabricated for photon detection applications. • Serial-parallel nanowire configuration leads to a large detector active area. • The YBCO nanowires exhibit critical current densities up to 106 A/cm{sup 2}. • The devices have been excited using a 1550-nm wavelength, pulsed laser irradiation. • Photoresponse signals have been measured and analyzed from 4 K up to the device T{sub c}. - Abstract: The possible use of high-temperature superconductors (HTS) for realizing superconducting nanowire single-photon detectors is a challenging, but also promising, aim because of their ultrafast electron relaxation times and high operating temperatures. The state-of-the-art HTS nanowires with a 50-nm thickness and widths down to 130 nm have been fabricated and tested under a 1550-nm wavelength laser irradiation. Experimental results presenting both the amplitude and rise times of the photoresponse signals as a function of the normalized detector bias current, measured in a wide temperature range, are discussed. The presence of two distinct regimes in the photoresponse temperature dependence is clearly evidenced, indicating that there are two different response mechanisms responsible for the HTS photoresponse mechanisms.

  17. Superconducting Nanowires as Nonlinear Inductive Elements for Qubits

    OpenAIRE

    Ku, Jaseung; Manucharyan, Vladimir; Bezryadin, Alexey

    2010-01-01

    We report microwave transmission measurements of superconducting Fabry-Perot resonators (SFPR), having a superconducting nanowire placed at a supercurrent antinode. As the plasma oscillation is excited, the supercurrent is forced to flow through the nanowire. The microwave transmission of the resonator-nanowire device shows a nonlinear resonance behavior, significantly dependent on the amplitude of the supercurrent oscillation. We show that such amplitude-dependent response is due to the nonl...

  18. Effect of point disorder on superconducting properties of ultrathin epitaxial NbN films

    International Nuclear Information System (INIS)

    Jesudasan, John; Bagwe, Vivas; Mondal, Mintu; Chand, Madhavi; Kamlapure, Anand; Pai, S.P.; Raychaudhuri, Pratap; Mishra, Archana

    2009-01-01

    We synthesized homogeneously disordered epitaxial NbN films on MgO(100) substrates using reactive dc magnetron sputtering. The disorder of the films is characterized by the Loffe-Regel parameter k F I. The superconducting properties are studied through transport, ac-susceptibility measurements and electron tunneling. The superconducting transition temperature is studied as a function of thickness for films of different disorder. In the case of the less disordered film, there is a smooth decrease in T c with decreasing thickness but for the more disordered film, the T c shows a sharp decrease to zero at a threshold thickness. The superconducting energy gap is studied via planar tunnel junctions. It is found that for the less disordered films, the temperature dependence of the gap follows the BCS variation but for the more disordered ones, there is a significant deviation from the BCS curve, and the gap remains finite at T c indicating that the superconducting transition is either governed by phase fluctuations or a first order phase transition. (author)

  19. Electrodeposition of Metal on GaAs Nanowires

    Science.gov (United States)

    Liu, Chao; Einabad, Omid; Watkins, Simon; Kavanagh, Karen

    2010-10-01

    Copper (Cu) electrical contacts to freestanding gallium arsenide (GaAs) nanowires have been fabricated via electrodeposition. The nanowires are zincblende (111) oriented grown epitaxially on n-type Si-doped GaAs (111)B substrates by gold-catalyzed Vapor Liquid Solid (VLS) growth in a metal organic vapour phase epitaxy (MOVPE) reactor. The epitaxial electrodeposition process, based on previous work with bulk GaAs substrates, consists of a substrate oxide pre-etch in dilute ammonium-hydroxide carried out prior to galvanostatic electrodeposition in a pure Cu sulphate aqueous electrolyte at 20-60^oC. For GaAs nanowires, we find that Cu or Fe has a preference for growth on the gold catalyst avoiding the sidewalls. After removing gold, both metals still prefer to grow only on top of the nanowire, which has the largest potential field.

  20. Transport Phenomena in Nanowires, Nanotubes, and Other Low-Dimensional Systems

    KAUST Repository

    Montes Muñ oz, Enrique

    2017-01-01

    and their dependence on the nanowire growth direction, diameter, and length. At equilibrium Au-nanowire distance we find strong electronic coupling between electrodes and nanowire, resulting in low contact resistance. For the tunneling regime, the decay

  1. Tree-like SnO2 nanowires and optical properties

    International Nuclear Information System (INIS)

    Tao Tao; Chen Qiyuan; Hu Huiping; Chen Ying

    2011-01-01

    Research highlights: → Tree-like SnO 2 nanowires can be grown as low as 1100 deg. C by a vapour-solid process using a milled SnO 2 powder as the evaporation source. → FT-IR and PL measurements have shown that the tree-like nanostructures lead to superb physical properties. → The PL spectrum of such tree-like nanowires exhibits a strong PL peak at 548 nm. - Abstract: Tree-like SnO 2 nanowires have been grown by a vapor-solid process using a milled SnO 2 powder as the evaporation source. Phase, structural evolution and chemical composition were investigated using X-ray diffraction (XRD), X-ray spectrometry (EDS), and scanning electron microscopy (SEM). The process yields a large proportion of ultra-long rutile nanowires of 50-150 nm diameter and lengths up to several tens of micrometers. High-resolution transmission electron microscopy (HRTEM) shows that the SnO 2 nanowires are single crystals in the (1 0 1) growth direction with scattered smaller crystals or nanowires as the tree branches. The SnO 2 nanostructures were also examined using Fourier transform infra-red (FT-IR) and photoluminescence (PL) spectroscopy. A strong emission band centered at 548 nm dominated the PL spectrum of the tree-like nanowires.

  2. Composition–dependent growth dynamics of selectively grown InGaAs nanowires

    International Nuclear Information System (INIS)

    Kohashi, Y; Hara, S; Motohisa, J

    2014-01-01

    We grew gallium-rich (x > 0.50) and indium-rich (x < 0.50) In 1 − x Ga x As nanowires by catalyst–free selective-area metal–organic vapor-phase epitaxy (SA-MOVPE), and compared their growth dynamics dependence on V/III ratio. It was found that the growth dynamics of In 1 − x Ga x As nanowires is clearly dependent on the alloy composition x. Specifically, for gallium–rich nanowire growth, the axial growth rate of nanowires initially increased with decreasing V/III ratio, and then started to decrease when the V/III ratio continued to decrease below a critical value. On the other hand, axial growth rate of indium-rich nanowires monotonically decreased with decreasing V/III ratio. In addition, the alloy composition was strongly dependent on the V/III ratio for gallium-rich nanowire growth, while it was relatively independent of the V/III ratio for indium-rich nanowire growth. We discuss the origin of dissimilarity in the growth dynamics dependence on V/III ratio between gallium-rich and indium-rich InGaAs nanowire growth, and conclude that it is due to the inherent dissimilarity between GaAs and InAs. Our finding provides important guidelines for achieving precise control of the diameter, height, and alloy composition of nanowires suitable for future nanowire-based electronics. (papers)

  3. Tunneling and Transport in Nanowires

    International Nuclear Information System (INIS)

    Goldman, Allen M.

    2016-01-01

    The goal of this program was to study new physical phenomena that might be relevant to the performance of conductive devices and circuits of the smallest realizable feature sizes possible using physical rather than biological techniques. Although the initial scientific work supported involved the use of scanning tunneling microscopy and spectroscopy to ascertain the statistics of the energy level distribution of randomly sized and randomly shaped quantum dots, or nano-crystals, the main focus was on the investigation of selected properties, including superconductivity, of conducting and superconducting nanowires prepared using electron-beam-lithography. We discovered a magnetic-field-restoration of superconductivity in out-of-equilibrium nanowires driven resistive by current. This phenomenon was explained by the existence of a state in which dissipation coexisted with nonvanishing superconducting order. We also produced ultra-small superconducting loops to study a predicted anomalous fluxoid quantization, but instead, found a magnetic-field-dependent, high-resistance state, rather than superconductivity. Finally, we developed a simple and controllable nanowire in an induced charged layer near the surface of a masked single-crystal insulator, SrTiO_3. The layer was induced using an electric double layer transistor employing an ionic liquid (IL). The transport properties of the induced nanowire resembled those of collective electronic transport through an array of quantum dots.

  4. Ultralow surface recombination velocity in InP nanowires probed by terahertz spectroscopy.

    Science.gov (United States)

    Joyce, Hannah J; Wong-Leung, Jennifer; Yong, Chaw-Keong; Docherty, Callum J; Paiman, Suriati; Gao, Qiang; Tan, H Hoe; Jagadish, Chennupati; Lloyd-Hughes, James; Herz, Laura M; Johnston, Michael B

    2012-10-10

    Using transient terahertz photoconductivity measurements, we have made noncontact, room temperature measurements of the ultrafast charge carrier dynamics in InP nanowires. InP nanowires exhibited a very long photoconductivity lifetime of over 1 ns, and carrier lifetimes were remarkably insensitive to surface states despite the large nanowire surface area-to-volume ratio. An exceptionally low surface recombination velocity (170 cm/s) was recorded at room temperature. These results suggest that InP nanowires are prime candidates for optoelectronic devices, particularly photovoltaic devices, without the need for surface passivation. We found that the carrier mobility is not limited by nanowire diameter but is strongly limited by the presence of planar crystallographic defects such as stacking faults in these predominantly wurtzite nanowires. These findings show the great potential of very narrow InP nanowires for electronic devices but indicate that improvements in the crystallographic uniformity of InP nanowires will be critical for future nanowire device engineering.

  5. High-Performance Single Nanowire Tunnel Diodes

    DEFF Research Database (Denmark)

    Wallentin, Jesper; Persson, Johan Mikael; Wagner, Jakob Birkedal

    2010-01-01

    We demonstrate single nanowire tunnel diodes with room temperature peak current densities of up to 329 A/cm(2). Despite the large surface to volume ratio of the type-II InP-GaAs axial heterostructure nanowires, we measure peak to valley current ratios (PVCR) of up to 8.2 at room temperature and 27...

  6. Hyporheic Exchange Flows and Biogeochemical Patterns near a Meandering Stream: East Fork of the Jemez River, Valles Caldera National Preserve, New Mexico

    Science.gov (United States)

    Christensen, H.; Wooten, J. P.; Swanson, E.; Senison, J. J.; Myers, K. D.; Befus, K. M.; Warden, J.; Zamora, P. B.; Gomez, J. D.; Wilson, J. L.; Groffman, A.; Rearick, M. S.; Cardenas, M. B.

    2012-12-01

    A study by the 2012 Hydrogeology Field Methods class of the University of Texas at Austin implemented multiple approaches to evaluate and characterize local hyporheic zone flow and biogeochemical trends in a highly meandering reach of the of the East Fork of the Jemez River, a fourth order stream in northwestern New Mexico. This section of the Jemez River is strongly meandering and exhibits distinct riffle-pool morphology. The high stream sinuosity creates inter-meander hyporheic flow that is also largely influenced by local groundwater gradients. In this study, dozens of piezometers were used to map the water table and flow vectors were then calculated. Surface water and ground water samples were collected and preserved for later geochemical analysis by ICPMS and HPLC, and unstable parameters and alkalinity were measured on-site. Additionally, information was collected from thermal monitoring of the streambed, stream gauging, and from a series of electrical resistivity surveys forming a network across the site. Hyporheic flow paths are suggested by alternating gaining and losing sections of the stream as determined by stream gauging at multiple locations along the reach. Water table maps and calculated fluxes across the sediment-water interface also indicate hyporheic flow paths. We find variability in the distribution of biogeochemical constituents (oxidation-reduction potential, nitrate, ammonium, and phosphate) along interpreted flow paths which is partly consistent with hyporheic exchange. The variability and heterogeneity of reducing and oxidizing conditions is interpreted to be a result of groundwater-surface water interaction. Two-dimensional mapping of biogeochemical parameters show redox transitions along interpreted flow paths. Further analysis of various measured unstable chemical parameters results in observable trends strongly delineated along these preferential flow paths that are consistent with the direction of groundwater flow and the assumed

  7. Tungsten oxide nanowires grown on amorphous-like tungsten films

    International Nuclear Information System (INIS)

    Dellasega, D; Pezzoli, A; Russo, V; Passoni, M; Pietralunga, S M; Nasi, L; Conti, C; Vahid, M J; Tagliaferri, A

    2015-01-01

    Tungsten oxide nanowires have been synthesized by vacuum annealing in the range 500–710 °C from amorphous-like tungsten films, deposited on a Si(100) substrate by pulsed laser deposition (PLD) in the presence of a He background pressure. The oxygen required for the nanowires formation is already adsorbed in the W matrix before annealing, its amount depending on deposition parameters. Nanowire crystalline phase and stoichiometry depend on annealing temperature, ranging from W_1_8O_4_9-Magneli phase to monoclinic WO_3. Sufficiently long annealing induces the formation of micrometer-long nanowires, up to 3.6 μm with an aspect ratio up to 90. Oxide nanowire growth appears to be triggered by the crystallization of the underlying amorphous W film, promoting their synthesis at low temperatures. (paper)

  8. Understanding the true shape of Au-catalyzed GaAs nanowires.

    Science.gov (United States)

    Jiang, Nian; Wong-Leung, Jennifer; Joyce, Hannah J; Gao, Qiang; Tan, Hark Hoe; Jagadish, Chennupati

    2014-10-08

    With increasing interest in nanowire-based devices, a thorough understanding of the nanowire shape is required to gain tight control of the quality of nanowire heterostructures and improve the performance of related devices. We present a systematic study of the sidewalls of Au-catalyzed GaAs nanowires by investigating the faceting process from the beginning with vapor-liquid-solid (VLS) nucleation, followed by the simultaneous radial growth on the sidewalls, and to the end with sidewall transformation during annealing. The VLS nucleation interface of our GaAs nanowires is revealed by examining cross sections of the nanowire, where the nanowire exhibits a Reuleaux triangular shape with three curved surfaces along {112}A. These curved surfaces are not thermodynamically stable and adopt {112}A facets during radial growth. We observe clear differences in radial growth rate between the ⟨112⟩A and ⟨112⟩B directions with {112}B facets forming due to the slower radial growth rate along ⟨112⟩B directions. These sidewalls transform to {110} facets after high temperature (>500 °C) annealing. A nucleation model is proposed to explain the origin of the Reuleaux triangular shape of the nanowires, and the sidewall evolution is explained by surface kinetic and thermodynamic limitations.

  9. Lasing in robust cesium lead halide perovskite nanowires

    Science.gov (United States)

    Eaton, Samuel W.; Lai, Minliang; Gibson, Natalie A.; Wong, Andrew B.; Dou, Letian; Ma, Jie; Wang, Lin-Wang; Leone, Stephen R.; Yang, Peidong

    2016-01-01

    The rapidly growing field of nanoscale lasers can be advanced through the discovery of new, tunable light sources. The emission wavelength tunability demonstrated in perovskite materials is an attractive property for nanoscale lasers. Whereas organic–inorganic lead halide perovskite materials are known for their instability, cesium lead halides offer a robust alternative without sacrificing emission tunability or ease of synthesis. Here, we report the low-temperature, solution-phase growth of cesium lead halide nanowires exhibiting low-threshold lasing and high stability. The as-grown nanowires are single crystalline with well-formed facets, and act as high-quality laser cavities. The nanowires display excellent stability while stored and handled under ambient conditions over the course of weeks. Upon optical excitation, Fabry–Pérot lasing occurs in CsPbBr3 nanowires with an onset of 5 μJ cm−2 with the nanowire cavity displaying a maximum quality factor of 1,009 ± 5. Lasing under constant, pulsed excitation can be maintained for over 1 h, the equivalent of 109 excitation cycles, and lasing persists upon exposure to ambient atmosphere. Wavelength tunability in the green and blue regions of the spectrum in conjunction with excellent stability makes these nanowire lasers attractive for device fabrication. PMID:26862172

  10. Manganese oxide nanowires, films, and membranes and methods of making

    Science.gov (United States)

    Suib, Steven Lawrence [Storrs, CT; Yuan, Jikang [Storrs, CT

    2008-10-21

    Nanowires, films, and membranes comprising ordered porous manganese oxide-based octahedral molecular sieves, and methods of making, are disclosed. A single crystal ultra-long nanowire includes an ordered porous manganese oxide-based octahedral molecular sieve, and has an average length greater than about 10 micrometers and an average diameter of about 5 nanometers to about 100 nanometers. A film comprises a microporous network comprising a plurality of single crystal nanowires in the form of a layer, wherein a plurality of layers is stacked on a surface of a substrate, wherein the nanowires of each layer are substantially axially aligned. A free standing membrane comprises a microporous network comprising a plurality of single crystal nanowires in the form of a layer, wherein a plurality of layers is aggregately stacked, and wherein the nanowires of each layer are substantially axially aligned.

  11. Plasmonic Waveguide-Integrated Nanowire Laser

    DEFF Research Database (Denmark)

    Bermudez-Urena, Esteban; Tutuncuoglu, Gozde; Cuerda, Javier

    2017-01-01

    technologies. Despite significant advances in their fundamental aspects, the integration within scalable photonic circuitry remains challenging. Here we report on the realization of hybrid photonic devices consisting of nanowire lasers integrated with wafer-scale lithographically designed V-groove plasmonic......Next-generation optoelectronic devices and photonic circuitry will have to incorporate on-chip compatible nanolaser sources. Semiconductor nanowire lasers have emerged as strong candidates for integrated systems with applications ranging from ultrasensitive sensing to data communication...

  12. Gas Sensors Based on Semiconducting Nanowire Field-Effect Transistors

    Directory of Open Access Journals (Sweden)

    Ping Feng

    2014-09-01

    Full Text Available One-dimensional semiconductor nanostructures are unique sensing materials for the fabrication of gas sensors. In this article, gas sensors based on semiconducting nanowire field-effect transistors (FETs are comprehensively reviewed. Individual nanowires or nanowire network films are usually used as the active detecting channels. In these sensors, a third electrode, which serves as the gate, is used to tune the carrier concentration of the nanowires to realize better sensing performance, including sensitivity, selectivity and response time, etc. The FET parameters can be modulated by the presence of the target gases and their change relate closely to the type and concentration of the gas molecules. In addition, extra controls such as metal decoration, local heating and light irradiation can be combined with the gate electrode to tune the nanowire channel and realize more effective gas sensing. With the help of micro-fabrication techniques, these sensors can be integrated into smart systems. Finally, some challenges for the future investigation and application of nanowire field-effect gas sensors are discussed.

  13. Fabrication and Characterization of Mg-Doped GaN Nanowires

    International Nuclear Information System (INIS)

    Dong-Dong, Zhang; Cheng-Shan, Xue; Hui-Zhao, Zhuang; Ying-Long, Huang; Zou-Ping, Wang; Ying, Wang; Yong-Fu, Guo

    2008-01-01

    Mg-doped GaN nanowires have been synthesized by ammoniating Ga 2 O 3 films doped with Mg under flowing ammonia atmosphere at 850° C. The Mg-doped GaN nanowires are characterized by x-ray diffraction (XRD), scanning electron microscope (SEM), high-resolution transmission electron microscopy (HRTEM) and photo-luminescence (PL). The results demonstrate that the nanowires are single crystalline with hexagonal wurzite structure. The diameters of the nanowires are 20–30 nm and the lengths are 50–100 μm. The GaN nanowires show three emission bands with well-defined PL peak at 3.45 eV, 3.26 eV, 2.95 eV, respectively. The large distinct blueshift of the bandgap emission can be attributed to the Burstein–Moss effect. The peak at 3.26 eV represents the transition from the conduction-band edge to the acceptor level AM (acceptor Mg). The growth mechanism of crystalline GaN nanowires is discussed briefly. (cross-disciplinary physics and related areas of science and technology)

  14. Solar heating of GaAs nanowire solar cells.

    Science.gov (United States)

    Wu, Shao-Hua; Povinelli, Michelle L

    2015-11-30

    We use a coupled thermal-optical approach to model the operating temperature rise in GaAs nanowire solar cells. We find that despite more highly concentrated light absorption and lower thermal conductivity, the overall temperature rise in a nanowire structure is no higher than in a planar structure. Moreover, coating the nanowires with a transparent polymer can increase the radiative cooling power by 2.2 times, lowering the operating temperature by nearly 7 K.

  15. Nanoscale Electronic Conditioning for Improvement of Nanowire Light-Emitting-Diode Efficiency.

    Science.gov (United States)

    May, Brelon J; Belz, Matthew R; Ahamed, Arshad; Sarwar, A T M G; Selcu, Camelia M; Myers, Roberto C

    2018-04-24

    Commercial III-Nitride LEDs and lasers spanning visible and ultraviolet wavelengths are based on epitaxial films. Alternatively, nanowire-based III-Nitride optoelectronics offer the advantage of strain compliance and high crystalline quality growth on a variety of inexpensive substrates. However, nanowire LEDs exhibit an inherent property distribution, resulting in uneven current spreading through macroscopic devices that consist of millions of individual nanowire diodes connected in parallel. Despite being electrically connected, only a small fraction of nanowires, sometimes current in the ensemble devices. Burn-in electronic conditioning is performed by applying a short-term overload voltage; the nanoshorts experience very high current density, sufficient to render them open circuits, thereby forcing a new current path through more nanowire LEDs in an ensemble device. Current-voltage measurements of individual nanowires are acquired using conductive atomic force microscopy to observe the removal of nanoshorts using burn-in. In macroscopic devices, this results in a 33× increase in peak EL and reduced leakage current. Burn-in conditioning of nanowire ensembles therefore provides a straightforward method to mitigate nonuniformities inherent to nanowire devices.

  16. Vertical group III-V nanowires on si, heterostructures, flexible arrays and fabrication

    Science.gov (United States)

    Wang, Deli; Soci, Cesare; Bao, Xinyu; Wei, Wei; Jing, Yi; Sun, Ke

    2015-01-13

    Embodiments of the invention provide a method for direct heteroepitaxial growth of vertical III-V semiconductor nanowires on a silicon substrate. The silicon substrate is etched to substantially completely remove native oxide. It is promptly placed in a reaction chamber. The substrate is heated and maintained at a growth temperature. Group III-V precursors are flowed for a growth time. Preferred embodiment vertical Group III-V nanowires on silicon have a core-shell structure, which provides a radial homojunction or heterojunction. A doped nanowire core is surrounded by a shell with complementary doping. Such can provide high optical absorption due to the long optical path in the axial direction of the vertical nanowires, while reducing considerably the distance over which carriers must diffuse before being collected in the radial direction. Alloy composition can also be varied. Radial and axial homojunctions and heterojunctions can be realized. Embodiments provide for flexible Group III-V nanowire structures. An array of Group III-V nanowire structures is embedded in polymer. A fabrication method forms the vertical nanowires on a substrate, e.g., a silicon substrate. Preferably, the nanowires are formed by the preferred methods for fabrication of Group III-V nanowires on silicon. Devices can be formed with core/shell and core/multi-shell nanowires and the devices are released from the substrate upon which the nanowires were formed to create a flexible structure that includes an array of vertical nanowires embedded in polymer.

  17. The Self- and Directed Assembly of Nanowires

    Science.gov (United States)

    Smith, Benjamin David

    This thesis explores the self- and directed assembly of nanowires. Specifically, we examine the driving forces behind nanowire self-assembly and the macro-structures that are formed. Particle-dense, oriented nanowire structures show promise in the fields of photonics, energy, sensing, catalysis, and electronics. Arrays of spherical particles have already found uses in electronic inks, sensing arrays, and many other commercial applications; but, it is a challenge to create specific arrays of morphologically and/or compositionally anisotropic particles. The following chapters illuminate the interactions that drive the assembly of anisotropic particles in high density solutions in the absence of applied fields or solution drying. Special emphasis is placed on the structures that are formed. The properties of micro- and nanoparticles and their assembly are introduced in Chapter 1. In particular, the properties of shape and material anisotropic particles are highlighted, while challenges in producing desired arrays are discussed. In this thesis, metallic nanowires of increasing complexity were used to examine the self-assembly behavior of both shape and material anisotropic particles. Nanowires were synthesized through templated electrodeposition. In this process, porous alumina membranes served as a template in which metal salts were reduced to form particles. Upon template dissolution, billions of nominally identical particles were released. We specifically focused on segmented, metallic nanowires 2-13 mum in length and 180 to 350 nm in diameter. Since these particles have strong van der Waals (VDWs) attractions, an electrostatically repulsive coating was necessary to prevent aggregation; we used small molecule, DNA, or amorphous silica coatings. Nanowires and their coatings were characterized by electron microscopy. In order to study self-assembly behavior, particle-dense aqueous suspensions were placed within an assembly chamber defined by a silicone spacer. The

  18. Tunable, flexible antireflection layer of ZnO nanowires embedded in PDMS.

    Science.gov (United States)

    Kim, Min Kyu; Yi, Dong Kee; Paik, Ungyu

    2010-05-18

    In this article, we report the fabrication of ordered hybrid structures composed of ZnO nanowires and a polymeric matrix with a polymer precursor infiltrating the nanowire arrays. The antireflective properties of the resulting ZnO nanowire-embedded polydimethylsiloxane composite (ZPC) were investigated at various ZnO nanowire lengths and ZPC bending angles. Interestingly, we found that whereas the antireflective properties showed a strong dependence on the length of the embedded ZnO nanowires in PDMS, the bending of ZPC has little effect on the antireflective properties.

  19. Effect of size on fracture and tensile manipulation of gold nanowires

    International Nuclear Information System (INIS)

    Wang, Fenying; Dai, Yanfeng; Zhao, Jianwei; Li, Qianjin; Zhang, Bin

    2014-01-01

    The fracture of metallic nanowires has attracted much attention owing to its reliability of application in nanoelectromechanical system. In this paper, we studied the fracture of [100] single-crystal gold nanowire subjected to uniaxial tension. The statistical breaking position distributions showed that the size effects had dominated the deformation and fracture of nanowires, and the quasi-static tensile deformations are insensitive to the styles of tensile rates. Furthermore, it was observed that the small-sized nanowire broke in the middle with disordered crystalline structure; for the middle-sized nanowire, although slippage plane had maintained the lattice degree, the fracture also happened in the middle due to symmetric tension; for the large-sized nanowire, the slippage was destroyed by symmetric tension, which induced the broken neck at one end of the nanowire. When the nanowire width is less than 5a (“a” means lattice constant, 0.408 nm for gold), the mechanical strength is relatively strong with obvious uncertainty, which can be attributed to the surface atom effect; when the width is larger than 5a, the influence of size on the mechanical property is more obvious at the constant strain rate than that at the absolute rate. Finally, the mechanical strength of the nanowire decreases with the size increasing

  20. Oriented Mn-doped CuO nanowire arrays

    International Nuclear Information System (INIS)

    Han, Dongqiang; Wu, Zhaofeng; Wang, Zhihe; Yang, Shaoguang

    2016-01-01

    Using anodic aluminum oxide membranes as the nanoreactors and controller, oriented nanowire arrays of the diluted magnetic semiconductor Mn-doped CuO have been successfully fabricated using Mn(NO_3)_2 · 4H_2O and Cu(NO_3)_2 · 3H_2O as the starting materials. X-ray diffraction measurements showed that the as-prepared oriented nanowire arrays are of high purity. Scanning electron microscope and transmission electron microscope studies showed the nanowires are oriented, continuous and uniform with a diameter and length of about 170 nm and several tens of micrometers, respectively, and thus of a high aspect ratio. Low-temperature magnetic measurements showed the ferromagnetic property of the oriented Mn-doped CuO nanowire arrays with the critical temperature at around 80 K, which will endow them with great potential applications in spintronics in the future. (paper)

  1. Towards low-dimensional hole systems in Be-doped GaAs nanowires

    DEFF Research Database (Denmark)

    Ullah, A. R.; Gluschke, J. G.; Jeppesen, Peter Krogstrup

    2017-01-01

    -gates produced using GaAs nanowires with three different Be-doping densities and various AuBe contact processing recipes. We show that contact annealing only brings small improvements for the moderately doped devices under conditions of lower anneal temperature and short anneal time. We only obtain good......GaAs was central to the development of quantum devices but is rarely used for nanowire-based quantum devices with InAs, InSb and SiGe instead taking the leading role. p-type GaAs nanowires offer a path to studying strongly confined 0D and 1D hole systems with strong spin–orbit effects, motivating...... our development of nanowire transistors featuring Be-doped p-type GaAs nanowires, AuBe alloy contacts and patterned local gate electrodes towards making nanowire-based quantum hole devices. We report on nanowire transistors with traditional substrate back-gates and EBL-defined metal/oxide top...

  2. Synthesis and Growth Mechanism of Ni Nanotubes and Nanowires

    Directory of Open Access Journals (Sweden)

    Wang Yiqian

    2009-01-01

    Full Text Available Abstract Highly ordered Ni nanotube and nanowire arrays were fabricated via electrodeposition. The Ni microstructures and the process of the formation were investigated using conventional and high-resolution transmission electron microscope. Herein, we demonstrated the systematic fabrication of Ni nanotube and nanowire arrays and proposed an original growth mechanism. With the different deposition time, nanotubes or nanowires can be obtained. Tubular nanostructures can be obtained at short time, while nanowires take longer time to form. This formation mechanism is applicable to design and synthesize other metal nanostructures and even compound nanostuctures via template-based electrodeposition.

  3. Smooth germanium nanowires prepared by a hydrothermal deposition process

    Energy Technology Data Exchange (ETDEWEB)

    Pei, L.Z., E-mail: lzpei1977@163.com [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Laboratory of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China); Zhao, H.S. [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Laboratory of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China); Tan, W. [Henkel Huawei Electronics Co. Ltd., Lian' yungang, Jiangsu 222006 (China); Yu, H.Y. [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Laboratory of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China); Chen, Y.W. [Department of Materials Science, Fudan University, Shanghai 200433 (China); Fan, C.G. [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Laboratory of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China); Zhang, Qian-Feng, E-mail: zhangqf@ahut.edu.cn [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Laboratory of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China)

    2009-11-15

    Smooth germanium nanowires were prepared using Ge and GeO{sub 2} as the starting materials and Cu sheet as the substrate by a simple hydrothermal deposition process. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) characterizations show that the germanium nanowires are smooth and straight with uniform diameter of about 150 nm in average and tens of micrometers in length. X-ray diffraction (XRD) and Raman spectrum of the germanium nanowires display that the germanium nanowires are mainly composed of cubic diamond phase. PL spectrum shows a strong blue light emission at 441 nm. The growth mechanism is also discussed.

  4. Smooth germanium nanowires prepared by a hydrothermal deposition process

    International Nuclear Information System (INIS)

    Pei, L.Z.; Zhao, H.S.; Tan, W.; Yu, H.Y.; Chen, Y.W.; Fan, C.G.; Zhang, Qian-Feng

    2009-01-01

    Smooth germanium nanowires were prepared using Ge and GeO 2 as the starting materials and Cu sheet as the substrate by a simple hydrothermal deposition process. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) characterizations show that the germanium nanowires are smooth and straight with uniform diameter of about 150 nm in average and tens of micrometers in length. X-ray diffraction (XRD) and Raman spectrum of the germanium nanowires display that the germanium nanowires are mainly composed of cubic diamond phase. PL spectrum shows a strong blue light emission at 441 nm. The growth mechanism is also discussed.

  5. Reliability of Single Crystal Silver Nanowire-Based Systems: Stress Assisted Instabilities.

    Science.gov (United States)

    Ramachandramoorthy, Rajaprakash; Wang, Yanming; Aghaei, Amin; Richter, Gunther; Cai, Wei; Espinosa, Horacio D

    2017-05-23

    Time-dependent mechanical characterization of nanowires is critical to understand their long-term reliability in applications, such as flexible-electronics and touch screens. It is also of great importance to develop a theoretical framework for experimentation and analysis on the mechanics of nanowires under time-dependent loading conditions, such as stress-relaxation and fatigue. Here, we combine in situ scanning electron microscope (SEM)/transmission electron microscope (TEM) tests with atomistic and phase-field simulations to understand the deformation mechanisms of single crystal silver nanowires held under constant strain. We observe that the nanowires initially undergo stress-relaxation, where the stress reduces with time and saturates after some time period. The stress-relaxation process occurs due to the formation of few dislocations and stacking faults. Remarkably, after a few hours the nanowires rupture suddenly. The reason for this abrupt failure of the nanowire was identified as stress-assisted diffusion, using phase-field simulations. Under a large applied strain, diffusion leads to the amplification of nanowire surface perturbation at long wavelengths and the nanowire fails at the stress-concentrated thin cross-sectional regions. An analytical analysis on the competition between the elastic energy and the surface energy predicts a longer time to failure for thicker nanowires than thinner ones, consistent with our experimental observations. The measured time to failure of nanowires under cyclic loading conditions can also be explained in terms of this mechanism.

  6. Template synthesis of indium nanowires using anodic aluminum oxide membranes.

    Science.gov (United States)

    Chen, Feng; Kitai, Adrian H

    2008-09-01

    Indium nanowires with diameters approximately 300 nm have been synthesized by a hydraulic pressure technique using anodic aluminum oxide (AAO) templates. The indium melt is injected into the AAO template and solidified to form nanostructures. The nanowires are dense, continuous and uniformly run through the entire approximately 60 microm thickness of the AAO template. X-ray diffraction (XRD) reveals that the nanowires are polycrystalline with a preferred orientation. SEM is performed to characterize the morphology of the nanowires.

  7. Multi-segmented Magnetic Nanowires Fabrication and Characterization

    KAUST Repository

    Moreno Garcia, Julian

    2016-04-28

    In this work, nickel-gold multi-segmented magnetic nanowires were grown by electrodeposition in anodized alumina templates. The templates were fabricated by a two step anodization process of aluminum disks in an aqueous solution of oxalic acid. In this process, ordered pores grew in an alumina oxide layer at the exposed aluminum area. Each disk was electropolished before the anodization process and the features at its surface were characterized to assess the effect on the pore ordering. Nickel Watts and gold cyanide electrolyte baths were prepared to electrodeposit pure nickel and gold in the templates. Both solutions response to a range of externally applied voltages was characterized and a threshold voltage above which deposition occurs is reported. Single nanowires were isolated by chemically dissolving the template and dispersed in ethanol. Devices were fabricated with these isolated nanowires in which gold contacts were deposited to measure the resistance. A current pulse setup was implemented in a magnetoresistance system allowing to send current pulses with amplitude as low as 2nA and 50μs width. Magneto resistance measurement were carried out on the single nanowires devices and the effect of current pulses was studied. It was found that distinct resistance states can be achieved by applying a determined current pulse at a constant applied field and that the initial state can be recovered by removing excess charge from the nanowire. Finally, the effect of annealing the nanowires in an air atmosphere at 150°C for 24 hours is studied showing that the nickel sections oxidize and the gold sections remain unchanged.

  8. Multi-segmented Magnetic Nanowires Fabrication and Characterization

    KAUST Repository

    Moreno Garcia, Julian

    2016-01-01

    In this work, nickel-gold multi-segmented magnetic nanowires were grown by electrodeposition in anodized alumina templates. The templates were fabricated by a two step anodization process of aluminum disks in an aqueous solution of oxalic acid. In this process, ordered pores grew in an alumina oxide layer at the exposed aluminum area. Each disk was electropolished before the anodization process and the features at its surface were characterized to assess the effect on the pore ordering. Nickel Watts and gold cyanide electrolyte baths were prepared to electrodeposit pure nickel and gold in the templates. Both solutions response to a range of externally applied voltages was characterized and a threshold voltage above which deposition occurs is reported. Single nanowires were isolated by chemically dissolving the template and dispersed in ethanol. Devices were fabricated with these isolated nanowires in which gold contacts were deposited to measure the resistance. A current pulse setup was implemented in a magnetoresistance system allowing to send current pulses with amplitude as low as 2nA and 50μs width. Magneto resistance measurement were carried out on the single nanowires devices and the effect of current pulses was studied. It was found that distinct resistance states can be achieved by applying a determined current pulse at a constant applied field and that the initial state can be recovered by removing excess charge from the nanowire. Finally, the effect of annealing the nanowires in an air atmosphere at 150°C for 24 hours is studied showing that the nickel sections oxidize and the gold sections remain unchanged.

  9. Validation of the dynamic wake meander model for loads and power production in the Egmond aan Zee wind farm

    DEFF Research Database (Denmark)

    Larsen, Torben J.; Aagaard Madsen, Helge; Larsen, Gunner Chr.

    2013-01-01

    This paper investigates wake effects on load and power production by using the dynamic wake meander (DWM) model implemented in the aeroelastic code HAWC2. The instationary wind farm flow characteristics are modeled by treating the wind turbine wakes as passive tracers transported downstream using...... a meandering process driven by the low frequent cross-wind turbulence components. The model complex is validated by comparing simulated and measured loads for the Dutch Egmond aan Zee wind farm consisting of 36 Vestas V90 turbine located outside the coast of the Netherlands. Loads and production are compared...... for two distinct wind directions—a free wind situation from the dominating southwest and a full wake situation from northwest, where the observed turbine is operating in wake from five turbines in a row with 7D spacing. The measurements have a very high quality, allowing for detailed comparison of both...

  10. Statistical meandering wake model and its application to yaw-angle optimisation of wind farms

    International Nuclear Information System (INIS)

    Thøgersen, E; Tranberg, B; Greiner, M; Herp, J

    2017-01-01

    The wake produced by a wind turbine is dynamically meandering and of rather narrow nature. Only when looking at large time averages, the wake appears to be static and rather broad, and is then well described by simple engineering models like the Jensen wake model (JWM). We generalise the latter deterministic models to a statistical meandering wake model (SMWM), where a random directional deflection is assigned to a narrow wake in such a way that on average it resembles a broad Jensen wake. In a second step, the model is further generalised to wind-farm level, where the deflections of the multiple wakes are treated as independently and identically distributed random variables. When carefully calibrated to the Nysted wind farm, the ensemble average of the statistical model produces the same wind-direction dependence of the power efficiency as obtained from the standard Jensen model. Upon using the JWM to perform a yaw-angle optimisation of wind-farm power output, we find an optimisation gain of 6.7% for the Nysted wind farm when compared to zero yaw angles and averaged over all wind directions. When applying the obtained JWM-based optimised yaw angles to the SMWM, the ensemble-averaged gain is calculated to be 7.5%. This outcome indicates the possible operational robustness of an optimised yaw control for real-life wind farms. (paper)

  11. Statistical meandering wake model and its application to yaw-angle optimisation of wind farms

    Science.gov (United States)

    Thøgersen, E.; Tranberg, B.; Herp, J.; Greiner, M.

    2017-05-01

    The wake produced by a wind turbine is dynamically meandering and of rather narrow nature. Only when looking at large time averages, the wake appears to be static and rather broad, and is then well described by simple engineering models like the Jensen wake model (JWM). We generalise the latter deterministic models to a statistical meandering wake model (SMWM), where a random directional deflection is assigned to a narrow wake in such a way that on average it resembles a broad Jensen wake. In a second step, the model is further generalised to wind-farm level, where the deflections of the multiple wakes are treated as independently and identically distributed random variables. When carefully calibrated to the Nysted wind farm, the ensemble average of the statistical model produces the same wind-direction dependence of the power efficiency as obtained from the standard Jensen model. Upon using the JWM to perform a yaw-angle optimisation of wind-farm power output, we find an optimisation gain of 6.7% for the Nysted wind farm when compared to zero yaw angles and averaged over all wind directions. When applying the obtained JWM-based optimised yaw angles to the SMWM, the ensemble-averaged gain is calculated to be 7.5%. This outcome indicates the possible operational robustness of an optimised yaw control for real-life wind farms.

  12. Synthesis of SERS active Au nanowires in different noncoordinating solvents

    Energy Technology Data Exchange (ETDEWEB)

    Hou Xiaomiao; Zhang Xiaoling, E-mail: zhangxl@bit.edu.cn [Key Laboratory of Cluster Science of Ministry of Education, Beijing Institute of Technology, Department of Chemistry, School of Science (China); Fang Yan, E-mail: fangyan@mail.cnu.edu.cn [Beijing Key Laboratory for Nano-Photonics and Nano-Structure (NPNS), Capital Normal University (China); Chen Shutang; Li Na; Zhou Qi [Key Laboratory of Cluster Science of Ministry of Education, Beijing Institute of Technology, Department of Chemistry, School of Science (China)

    2011-06-15

    Au nanowires with length up to micrometers were synthesized through a simple and one-pot solution growth method. HAuCl{sub 4} was reduced in a micellar structure formed by 1-octadecylamine and oleic acid in hexane, heptane, toluene and chloroform, respectively. As the non-polarity of noncoordinating solvents can affect the nucleation and growth rates of Au nanostructures, Au nanowires with different diameters could be obtained by changing the noncoordinating solvents in the synthetic process. The influences of the solvents on the morphology of Au nanowires were systematically studied. When using hexane as reaction solvent, the product turned to be high portion of Au nanowires with more uniform size than the others. Furthermore, surface-enhanced Raman scattering (SERS) spectrum of 2-thionaphthol was obtained on the Au nanowire-modified substrate, indicating that the as-synthesized Au nanowires have potential for highly sensitive optical detection application.

  13. X-ray diffraction from single GaAs nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Biermanns, Andreas

    2012-11-12

    In recent years, developments in X-ray focussing optics have allowed to produce highly intense, coherent X-ray beams with spot sizes in the range of 100 nm and below. Together with the development of new experimental stations, X-ray diffraction techniques can now be applied to study single nanometer-sized objects. In the present work, X-ray diffraction is applied to study different aspects of the epitaxial growth of GaAs nanowires. Besides conventional diffraction methods, which employ X-ray beams with dimensions of several tens of {mu}m, special emphasis lies on the use of nanodiffraction methods which allow to study single nanowires in their as-grown state without further preparation. In particular, coherent X-ray diffraction is applied to measure simultaneously the 3-dimensional shape and lattice parameters of GaAs nanowires grown by metal-organic vapor phase epitaxy. It is observed that due to a high density of zinc-blende rotational twins within the nanowires, their lattice parameter deviates systematically from the bulk zinc-blende phase. In a second step, the initial stage in the growth of GaAs nanowires on Si (1 1 1) surfaces is studied. This nanowires, obtained by Ga-assisted growth in molecular beam epitaxy, grow predominantly in the cubic zinc-blende structure, but contain inclusions of the hexagonal wurtzite phase close to their bottom interface. Using nanodiffraction methods, the position of the different structural units along the growth axis is determined. Because the GaAs lattice is 4% larger than silicon, these nanowires release their lattice mismatch by the inclusion of dislocations at the interface. Whereas NWs with diameters below 50 nm are free of strain, a rough interface structure in nanowires with diameters above 100 nm prevents a complete plastic relaxation, leading to a residual strain at the interface that decays elastically along the growth direction. Finally, measurements on GaAs-core/InAs-shell nanowire heterostructures are presented

  14. Recrystallized arrays of bismuth nanowires with trigonal orientation.

    Science.gov (United States)

    Limmer, Steven J; Yelton, W Graham; Erickson, Kristopher J; Medlin, Douglas L; Siegal, Michael P

    2014-01-01

    We demonstrate methods to improve the crystalline-quality of free-standing Bi nanowires arrays on a Si substrate and enhance the preferred trigonal orientation for thermoelectric performance by annealing the arrays above the 271.4 °C Bi melting point. The nanowires maintain their geometry during melting due to the formation of a thin Bi-oxide protective shell that contains the molten Bi. Recrystallizing nanowires from the melt improves crystallinity; those cooled rapidly demonstrate a strong trigonal orientation preference.

  15. Polarity Control of Heteroepitaxial GaN Nanowires on Diamond.

    Science.gov (United States)

    Hetzl, Martin; Kraut, Max; Hoffmann, Theresa; Stutzmann, Martin

    2017-06-14

    Group III-nitride materials such as GaN nanowires are characterized by a spontaneous polarization within the crystal. The sign of the resulting sheet charge at the top and bottom facet of a GaN nanowire is determined by the orientation of the wurtzite bilayer of the different atomic species, called N and Ga polarity. We investigate the polarity distribution of heteroepitaxial GaN nanowires on different substrates and demonstrate polarity control of GaN nanowires on diamond. Kelvin Probe Force Microscopy is used to determine the polarity of individual selective area-grown and self-assembled nanowires over a large scale. At standard growth conditions, mixed polarity occurs for selective GaN nanowires on various substrates, namely on silicon, on sapphire and on diamond. To obtain control over the growth orientation on diamond, the substrate surface is modified by nitrogen and oxygen plasma exposure prior to growth, and the growth parameters are adjusted simultaneously. We find that the surface chemistry and the substrate temperature are the decisive factors for obtaining control of up to 93% for both polarity types, whereas the growth mode, namely selective area or self-assembled growth, does not influence the polarity distribution significantly. The experimental results are discussed by a model based on the interfacial bonds between the GaN nanowires, the termination layer, and the substrate.

  16. Electromagnetic field enhancement effects in group IV semiconductor nanowires. A Raman spectroscopy approach

    Science.gov (United States)

    Pura, J. L.; Anaya, J.; Souto, J.; Prieto, A. C.; Rodríguez, A.; Rodríguez, T.; Periwal, P.; Baron, T.; Jiménez, J.

    2018-03-01

    Semiconductor nanowires (NWs) are the building blocks of future nanoelectronic devices. Furthermore, their large refractive index and reduced dimension make them suitable for nanophotonics. The study of the interaction between nanowires and visible light reveals resonances that promise light absorption/scattering engineering for photonic applications. Micro-Raman spectroscopy has been used as a characterization tool for semiconductor nanowires. The light/nanowire interaction can be experimentally assessed through the micro-Raman spectra of individual nanowires. As compared to both metallic and dielectric nanowires, semiconductor nanowires add additional tools for photon engineering. In particular, one can grow heterostructured nanowires, both axial and radial, and also one could modulate the doping level and the surface condition among other factors than can affect the light/NW interaction. We present herein a study of the optical response of group IV semiconductor nanowires to visible photons. The study is experimentally carried out through micro-Raman spectroscopy of different group IV nanowires, both homogeneous and axially heterostructured (SiGe/Si). The results are analyzed in terms of the electromagnetic modelling of the light/nanowire interaction using finite element methods. The presence of axial heterostructures is shown to produce electromagnetic resonances promising new photon engineering capabilities of semiconductor nanowires.

  17. Nanowire growth from the viewpoint of the thin film polylayer growth theory

    Science.gov (United States)

    Kashchiev, Dimo

    2018-03-01

    The theory of polylayer growth of thin solid films is employed for description of the growth kinetics of single-crystal nanowires. Expressions are derived for the dependences of the height h and radius r of a given nanowire on time t, as well as for the h(r) dependence. These dependences are applicable immediately after the nanowire nucleation on the substrate and thus include the period during which the nucleated nanowire changes its shape from that of cap to that of column. The analysis shows that the nanowire cap-to-column shape transition is continuous and makes it possible to kinetically define the nanowire shape-transition radius by means of the nanowire radial and axial growth rates. The obtained h(t), r(t) and h(r) dependences are found to provide a good description of available experimental data for growth of self-nucleated GaN nanowires by the vapor-solid mechanism.

  18. Methods of fabricating nanostructures and nanowires and devices fabricated therefrom

    Energy Technology Data Exchange (ETDEWEB)

    Majumdar, Arun; Shakouri, Ali; Sands, Timothy D.; Yang, Peidong; Mao, Samuel S.; Russo, Richard E.; Feick, Henning; Weber, Eicke R.; Kind, Hannes; Huang, Michael; Yan, Haoquan; Wu, Yiying; Fan, Rong

    2018-01-30

    One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as "nanowires", include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

  19. Superconducting nanowires as nonlinear inductive elements for qubits

    Science.gov (United States)

    Ku, Jaseung; Manucharyan, Vladimir; Bezryadin, Alexey

    2011-03-01

    We report microwave transmission measurements of superconducting Fabry-Perot resonators, having a superconducting nanowire placed at a supercurrent antinode. As the plasma oscillation is excited, the supercurrent is forced to flow through the nanowire. The microwave transmission of the resonator-nanowire device shows a nonlinear resonance behavior, significantly dependent on the amplitude of the supercurrent oscillation. We show that such amplitude-dependent response is due to the nonlinearity of the current-phase relationship of the nanowire. The results are explained within a nonlinear oscillator model of the Duffing oscillator, in which the nanowire acts as a purely inductive element, in the limit of low temperatures and low amplitudes. The low-quality factor sample exhibits a ``crater'' at the resonance peak at higher driving power, which is due to dissipation. We observe a hysteretic bifurcation behavior of the transmission response to frequency sweep in a sample with a higher quality factor. The Duffing model is used to explain the Duffing bistability diagram. NSF DMR-1005645, DOE DO-FG02-07ER46453.

  20. SYNTHESIS AND PHOTOLUMINESCENCE STUDIES ON ZINC OXIDE NANOWIRES

    Directory of Open Access Journals (Sweden)

    Nguyen Ngoc Long

    2017-11-01

    Full Text Available Semiconductor single crystal ZnO nanowires have been successfully synthesized by a simple method based on thermal evaporation of ZnO powders mixed with graphite. Metallic catalysts, carrying gases, and vacuum conditions are not necessary. The x-ray diffraction (XRD analysis shows that the ZnO nanowires are highly crystallized and have a typical wurtzite hexagonal structure with lattice constants a = 0.3246 nm and c = 0.5203 nm. The scanning electron microscopy (SEM images of nanowires indicate that diameters of the ZnO nanowires normally range from 100 to 300 nm and their lengths are several tens of micrometers. Photoluminescence (PL and photoluminescence excitation (PLE spectra of the nanowires were measured in the range of temperature from 15 K to the room temperature. Photoluminescence spectra at low temperatures exhibit a group of ultraviolet (UV narrow peaks in the region 368 nm ~ 390 nm, and a blue-green very broad peak at 500 nm. Origin of the emission lines in PL spectra and the lines in PLE spectra is discussed.

  1. Anodic Aluminum Oxide Membrane-Assisted Fabrication of ?-In2S3Nanowires

    OpenAIRE

    Shi, Jen-Bin; Chen, Chih-Jung; Lin, Ya-Ting; Hsu, Wen-Chia; Chen, Yu-Cheng; Wu, Po-Feng

    2009-01-01

    Abstract In this study, β-In2S3nanowires were first synthesized by sulfurizing the pure Indium (In) nanowires in an AAO membrane. As FE-SEM results, β-In2S3nanowires are highly ordered, arranged tightly corresponding to the high porosity of the AAO membrane used. The diameter of the β-In2S3nanowires is about 60 nm with the length of about 6–8 μm. Moreover, the aspect ratio of β-In2S3nanowires is up to 117. An EDS analysis revealed the β-In2S3nanowires with ...

  2. Coherent Charge Transport in Ballistic InSb Nanowire Josephson Junctions

    Science.gov (United States)

    Li, S.; Kang, N.; Fan, D. X.; Wang, L. B.; Huang, Y. Q.; Caroff, P.; Xu, H. Q.

    2016-01-01

    Hybrid InSb nanowire-superconductor devices are promising for investigating Majorana modes and topological quantum computation in solid-state devices. An experimental realisation of ballistic, phase-coherent superconductor-nanowire hybrid devices is a necessary step towards engineering topological superconducting electronics. Here, we report on a low-temperature transport study of Josephson junction devices fabricated from InSb nanowires grown by molecular-beam epitaxy and provide a clear evidence for phase-coherent, ballistic charge transport through the nanowires in the junctions. We demonstrate that our devices show gate-tunable proximity-induced supercurrent and clear signatures of multiple Andreev reflections in the differential conductance, indicating phase-coherent transport within the junctions. We also observe periodic modulations of the critical current that can be associated with the Fabry-Pérot interference in the nanowires in the ballistic transport regime. Our work shows that the InSb nanowires grown by molecular-beam epitaxy are of excellent material quality and hybrid superconducting devices made from these nanowires are highly desirable for investigation of the novel physics in topological states of matter and for applications in topological quantum electronics. PMID:27102689

  3. Synthesis of Indium Nanowires by Galvanic Displacement and Their Optical Properties

    Directory of Open Access Journals (Sweden)

    Hope Greg

    2008-01-01

    Full Text Available Abstract Single crystalline indium nanowires were prepared on Zn substrate which had been treated in concentrated sulphuric acid by galvanic displacement in the 0.002 mol L−1In2(SO43-0.002 mol L−1SeO2-0.02 mol L−1SDS-0.01 mol L−1citric acid aqueous solution. The typical diameter of indium nanowires is 30 nm and most of the nanowires are over 30 μm in length. XRD, HRTEM, SAED and structural simulation clearly demonstrate that indium nanowires are single-crystalline with the tetragonal structure, the growth direction of the nanowires is along [100] facet. The UV-Vis absorption spectra showed that indium nanowires display typical transverse resonance of SPR properties. The surfactant (SDS and the pretreatment of Zn substrate play an important role in the growth process. The mechanism of indium nanowires growth is the synergic effect of treated Zn substrate (hard template and SDS (soft template.

  4. Enhancement of thermoelectric figure-of-merit in laterally-coupled nanowire arrays

    International Nuclear Information System (INIS)

    Zhang, Yiqun; Shi, Yi; Pu, Lin; Wang, Junzhuan; Pan, Lijia; Zheng, Youdou

    2011-01-01

    A high ZT value is predicted in laterally-coupled nanowire arrays. The quantum confinement and coupling of electrons are considered in the framework of effective-mass envelope-function theory. The boundary scattering on phonons is also taken into account. The thermoelectric properties benefit from the large Seebeck coefficient and dramatically reduced lattice thermal conductivity, as well as the preserved electronic conductivity in the minibands of the coupling nanowires. The enhancement of ZT to more than 10-fold is achieved in the n-type Si nanowires/Ge host material. Results suggest that the laterally-coupled nanowire arrays can be designed for high-performance thermoelectric devices. -- Highlights: → A high ZT value is predicted in the lateral-coupling nanowire arrays. → The lattice thermal conductivity is dramatically reduced in the lateral direction of nanowire arrays. → The electron transport is preserved in the lateral direction due to the coupling effect. → The ZT value is largely enhanced as the nanowire volume fraction exceeds some critical point.

  5. Quantitative magnetometry analysis and structural characterization of multisegmented cobalt–nickel nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Cantu-Valle, Jesus [Department of Physics and Astronomy, University of Texas at San Antonio, One UTSA Circle, San Antonio, TX 78249 (United States); Díaz Barriga-Castro, Enrique [Centro de Investigación de Ciencias Físico Matemáticas/Facultad de Ciencias Físico Matemáticas, Universidad Autónoma de Nuevo León, Pedro de Alba s/n, San Nicolás de Los Garza, Nuevo León 66450 (Mexico); Vega, Víctor; García, Javier [Departamento de Física, Universidad de Oviedo, Calvo Sotelo s/n, Oviedo 33007 (Spain); Mendoza-Reséndez, Raquel [Facultad de Ingeniería Mecánica y Eléctrica. Universidad Autónoma de Nuevo León, Pedro de Alba s/n, San Nicolás de Los Garza, Nuevo León 66450 (Mexico); Luna, Carlos [Centro de Investigación de Ciencias Físico Matemáticas/Facultad de Ciencias Físico Matemáticas, Universidad Autónoma de Nuevo León, Pedro de Alba s/n, San Nicolás de Los Garza, Nuevo León 66450 (Mexico); Manuel Prida, Víctor [Departamento de Física, Universidad de Oviedo, Calvo Sotelo s/n, Oviedo 33007 (Spain); and others

    2015-04-01

    Understanding and measuring the magnetic properties of an individual nanowire and their relationship with crystalline structure and geometry are of scientific and technological great interest. In this work, we report the localized study of the magnetic flux distribution and the undisturbed magnetization of a single ferromagnetic nanowire that poses a bar-code like structure using off-axis electron holography (EH) under Lorentz conditions. The nanowires were grown by template-assisted electrodeposition, using AAO templates. Electron holography allows the visualization of the magnetic flux distribution within and surroundings as well as its quantification. The magnetic analysis performed at individual nanowires was correlated with the chemical composition and crystalline orientation of the nanowires. - Highlights: • The structure-magnetic property relationship of CoNi nanowires is determined. • Off axis electron holography for the magnetic nanowires is used for the analysis. • The magnetization is quantitatively obtained from the retrieved phase images. • These results lead to a better comprehension of the magneto-crystalline phenomena.

  6. Quantitative magnetometry analysis and structural characterization of multisegmented cobalt–nickel nanowires

    International Nuclear Information System (INIS)

    Cantu-Valle, Jesus; Díaz Barriga-Castro, Enrique; Vega, Víctor; García, Javier; Mendoza-Reséndez, Raquel; Luna, Carlos; Manuel Prida, Víctor

    2015-01-01

    Understanding and measuring the magnetic properties of an individual nanowire and their relationship with crystalline structure and geometry are of scientific and technological great interest. In this work, we report the localized study of the magnetic flux distribution and the undisturbed magnetization of a single ferromagnetic nanowire that poses a bar-code like structure using off-axis electron holography (EH) under Lorentz conditions. The nanowires were grown by template-assisted electrodeposition, using AAO templates. Electron holography allows the visualization of the magnetic flux distribution within and surroundings as well as its quantification. The magnetic analysis performed at individual nanowires was correlated with the chemical composition and crystalline orientation of the nanowires. - Highlights: • The structure-magnetic property relationship of CoNi nanowires is determined. • Off axis electron holography for the magnetic nanowires is used for the analysis. • The magnetization is quantitatively obtained from the retrieved phase images. • These results lead to a better comprehension of the magneto-crystalline phenomena

  7. Functionalization of magnetic nanowires by charged biopolymers

    DEFF Research Database (Denmark)

    Magnin, D.; Callegari, V.; Mátéfi-Tempfli, Stefan

    2008-01-01

    We report on a facile method for the preparation of biocompatible and bioactive magnetic nanowires. The method consists of the direct deposition of polysaccharides by layer-by-layer (LbL) assembly onto a brush of metallic nanowires; obtained by electrodeposition of the metal within the nanopores ...

  8. Effect of meander restoration on macroinvertebrate biodiversity: the case of the Borová stream (Blanský Les, Czech Republic)

    Czech Academy of Sciences Publication Activity Database

    Maradová, M.; Soldán, Tomáš

    2012-01-01

    Roč. 18, č. 1 (2012), s. 1-21 ISSN 1211-7420 Institutional research plan: CEZ:AV0Z50070508 Keywords : stream restoration * meander reconstruction * species richness Subject RIV: EH - Ecology, Behaviour http://www.npsumava.cz/gallery/21/6431-sg_18_1_maradovasoldan.pdf

  9. Stable and Controllable Synthesis of Silver Nanowires for Transparent Conducting Film

    Science.gov (United States)

    Liu, Bitao; Yan, Hengqing; Chen, Shanyong; Guan, Youwei; Wu, Guoguo; Jin, Rong; Li, Lu

    2017-03-01

    Silver nanowires without particles are synthesized by a solvothermal method at temperature 150 °C. Silver nanowires are prepared via a reducing agent of glycerol and a capping agent of polyvinylpyrrolidone ( M w ≈ 1,300,000). Both of them can improve the purity of the as-prepared silver nanowires. With controllable shapes and sizes, silver nanowires are grown continuously up to 10-20 μm in length with 40-50 nm in diameter. To improve the yield of silver nanowires, the different concentrations of AgNO3 synthesis silver nanowires are discussed. The characterizations of the synthesized silver nanowires are analyzed by UV-visible absorption spectroscopy, X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscope (AFM), and silver nanowires are pumped on the cellulose membrane and heated stress on the PET. Then, the cellulose membrane is dissolved by the steam of acetone to prepare flexible transparent conducting thin film, which is detected 89.9 of transmittance and 58 Ω/□. Additionally, there is a close loop connected by the thin film, a blue LED, a pair of batteries, and a number of wires, to determinate directly the film if conductive or not.

  10. Controlled growth of single nanowires within a supported alumina template

    DEFF Research Database (Denmark)

    Vlad, A.; Mátéfi-Tempfli, M.; Faniel, S.

    2006-01-01

    A simple technique for fabricating single nanowires with well-defined position is presented. The process implies the use of a silicon nitride mask for selective electrochemical growth of the nanowires in a porous alumina template. We show that this method allows the realization of complex nanowire...

  11. Tunneling and Transport in Nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Goldman, Allen M. [Univ. of Minnesota, Minneapolis, MN (United States)

    2016-08-16

    The goal of this program was to study new physical phenomena that might be relevant to the performance of conductive devices and circuits of the smallest realizable feature sizes possible using physical rather than biological techniques. Although the initial scientific work supported involved the use of scanning tunneling microscopy and spectroscopy to ascertain the statistics of the energy level distribution of randomly sized and randomly shaped quantum dots, or nano-crystals, the main focus was on the investigation of selected properties, including superconductivity, of conducting and superconducting nanowires prepared using electron-beam-lithography. We discovered a magnetic-field-restoration of superconductivity in out-of-equilibrium nanowires driven resistive by current. This phenomenon was explained by the existence of a state in which dissipation coexisted with nonvanishing superconducting order. We also produced ultra-small superconducting loops to study a predicted anomalous fluxoid quantization, but instead, found a magnetic-field-dependent, high-resistance state, rather than superconductivity. Finally, we developed a simple and controllable nanowire in an induced charged layer near the surface of a masked single-crystal insulator, SrTiO3. The layer was induced using an electric double layer transistor employing an ionic liquid (IL). The transport properties of the induced nanowire resembled those of collective electronic transport through an array of quantum dots.

  12. Synthesis and characterization of single-crystalline zinc tin oxide nanowires

    Science.gov (United States)

    Shi, Jen-Bin; Wu, Po-Feng; Lin, Hsien-Sheng; Lin, Ya-Ting; Lee, Hsuan-Wei; Kao, Chia-Tze; Liao, Wei-Hsiang; Young, San-Lin

    2014-05-01

    Crystalline zinc tin oxide (ZTO; zinc oxide with heavy tin doping of 33 at.%) nanowires were first synthesized using the electrodeposition and heat treatment method based on an anodic aluminum oxide (AAO) membrane, which has an average diameter of about 60 nm. According to the field emission scanning electron microscopy (FE-SEM) results, the synthesized ZTO nanowires are highly ordered and have high wire packing densities. The length of ZTO nanowires is about 4 μm, and the aspect ratio is around 67. ZTO nanowires with a Zn/(Zn + Sn) atomic ratio of 0.67 (approximately 2/3) were observed from an energy dispersive spectrometer (EDS). X-ray diffraction (XRD) and corresponding selected area electron diffraction (SAED) patterns demonstrated that the ZTO nanowire is hexagonal single-crystalline. The study of ultraviolet/visible/near-infrared (UV/Vis/NIR) absorption showed that the ZTO nanowire is a wide-band semiconductor with a band gap energy of 3.7 eV.

  13. Highly ordered uniform single-crystal Bi nanowires: fabrication and characterization

    International Nuclear Information System (INIS)

    Bisrat, Y; Luo, Z P; Davis, D; Lagoudas, D

    2007-01-01

    A mechanical pressure injection technique has been used to fabricate uniform bismuth (Bi) nanowires in the pores of an anodic aluminum oxide (AAO) template. The AAO template was prepared from general purity aluminum by a two-step anodization followed by heat treatment to achieve highly ordered nanochannels. The nanowires were then fabricated by an injection technique whereby the molten Bi was injected into the AAO template using a hydraulic pressure method. The Bi nanowires prepared by this method were found to be dense and continuous with uniform diameter throughout the length. Electron diffraction experiments using the transmission electron microscope on cross-sectional and free-standing longitudinal Bi nanowires showed that the majority of the individual nanowires were single crystalline, with preferred orientation of growth along the [011] zone axis of the pseudo-cubic structure. The work presented here provides an inexpensive and effective way of fabricating highly ordered single-crystalline Bi nanowires, with uniform size distributions

  14. Co-percolation to tune conductive behaviour in dynamical metallic nanowire networks.

    Science.gov (United States)

    Fairfield, J A; Rocha, C G; O'Callaghan, C; Ferreira, M S; Boland, J J

    2016-11-03

    Nanowire networks act as self-healing smart materials, whose sheet resistance can be tuned via an externally applied voltage stimulus. This memristive response occurs due to modification of junction resistances to form a connectivity path across the lowest barrier junctions in the network. While most network studies have been performed on expensive noble metal nanowires like silver, networks of inexpensive nickel nanowires with a nickel oxide coating can also demonstrate resistive switching, a common feature of metal oxides with filamentary conduction. However, networks made from solely nickel nanowires have high operation voltages which prohibit large-scale material applications. Here we show, using both experiment and simulation, that a heterogeneous network of nickel and silver nanowires allows optimization of the activation voltage, as well as tuning of the conduction behavior to be either resistive switching, memristive, or a combination of both. Small percentages of silver nanowires, below the percolation threshold, induce these changes in electrical behaviour, even for low area coverage and hence very transparent films. Silver nanowires act as current concentrators, amplifying conductivity locally as shown in our computational dynamical activation framework for networks of junctions. These results demonstrate that a heterogeneous nanowire network can act as a cost-effective adaptive material with minimal use of noble metal nanowires, without losing memristive behaviour that is essential for smart sensing and neuromorphic applications.

  15. A lithographically patterned capacitor with horizontal nanowires of length 2.5 mm.

    Science.gov (United States)

    Yan, Wenbo; Thai, Mya Le; Dutta, Rajen; Li, Xiaowei; Xing, Wendong; Penner, Reginald M

    2014-04-09

    A symmetrical hybrid capacitor consisting of interdigitated, horizontal nanowires is described. Each of the 750 nanowires within the capacitor is 2.5 mm in length, consisting of a gold nanowire core (40 × ≈200 nm) encapsulated within a hemicylindrical shell of δ-phase MnO2 (thickness = 60-220 nm). These Au@δ-MnO2 nanowires are patterned onto a planar glass surface using lithographically patterned nanowire electrodeposition (LPNE). A power density of 165 kW/kg and energy density of 24 Wh/kg were obtained for a typical nanowire array in which the MnO2 shell thickness was 68 ± 8 nm. Capacitors incorporating these ultralong nanowires lost ≈10% of their capacity rapidly, during the first 20 discharge cycles, and then retained 90% of their maximum capacity for the ensuing 6000 cycles. The ability of capacitors consisting of ultralong Au@δ-MnO2 nanowires to simultaneously deliver high power and high capacity with acceptable cycle life is demonstrated.

  16. Thermoelectric Power Factor Limit of a 1D Nanowire

    Science.gov (United States)

    Chen, I.-Ju; Burke, Adam; Svilans, Artis; Linke, Heiner; Thelander, Claes

    2018-04-01

    In the past decade, there has been significant interest in the potentially advantageous thermoelectric properties of one-dimensional (1D) nanowires, but it has been challenging to find high thermoelectric power factors based on 1D effects in practice. Here we point out that there is an upper limit to the thermoelectric power factor of nonballistic 1D nanowires, as a consequence of the recently established quantum bound of thermoelectric power output. We experimentally test this limit in quasiballistic InAs nanowires by extracting the maximum power factor of the first 1D subband through I -V characterization, finding that the measured maximum power factors conform to the theoretical limit. The established limit allows the prediction of the achievable power factor of a specific nanowire material system with 1D electronic transport based on the nanowire dimension and mean free path. The power factor of state-of-the-art semiconductor nanowires with small cross section and high crystal quality can be expected to be highly competitive (on the order of mW /m K2 ) at low temperatures. However, they have no clear advantage over bulk materials at, or above, room temperature.

  17. Electrochemical Deposition of Lanthanum Telluride Thin Films and Nanowires

    Science.gov (United States)

    Chi, Su (Ike); Farias, Stephen; Cammarata, Robert

    2013-03-01

    Tellurium alloys are characterized by their high performance thermoelectric properties and recent research has shown nanostructured tellurium alloys display even greater performance than bulk equivalents. Increased thermoelectric efficiency of nanostructured materials have led to significant interests in developing thin film and nanowire structures. Here, we report on the first successful electrodeposition of lanthanum telluride thin films and nanowires. The electrodeposition of lanthanum telluride thin films is performed in ionic liquids at room temperature. The synthesis of nanowires involves electrodepositing lanthanum telluride arrays into anodic aluminum oxide (AAO) nanoporous membranes. These novel procedures can serve as an alternative means of simple, inexpensive and laboratory-environment friendly methods to synthesize nanostructured thermoelectric materials. The thermoelectric properties of thin films and nanowires will be presented to compare to current state-of-the-art thermoelectric materials. The morphologies and chemical compositions of the deposited films and nanowires are characterized using SEM and EDAX analysis.

  18. Stability of core–shell nanowires in selected model solutions

    International Nuclear Information System (INIS)

    Kalska-Szostko, B.; Wykowska, U.; Basa, A.; Zambrzycka, E.

    2015-01-01

    Highlights: • Stability of the core–shell nanowires in environmental solutions were tested. • The most and the least aggressive solutions were determined. • The influence of different solutions on magnetic nanowires core was found out. - Abstract: This paper presents the studies of stability of magnetic core–shell nanowires prepared by electrochemical deposition from an acidic solution containing iron in the core and modified surface layer. The obtained nanowires were tested according to their durability in distilled water, 0.01 M citric acid, 0.9% NaCl, and commercial white wine (12% alcohol). The proposed solutions were chosen in such a way as to mimic food related environment due to a possible application of nanowires as additives to, for example, packages. After 1, 2 and 3 weeks wetting in the solutions, nanoparticles were tested by Infrared Spectroscopy, Atomic Absorption Spectroscopy, Transmission Electron Microscopy and X-ray diffraction methods

  19. Stability of core–shell nanowires in selected model solutions

    Energy Technology Data Exchange (ETDEWEB)

    Kalska-Szostko, B., E-mail: kalska@uwb.edu.pl; Wykowska, U.; Basa, A.; Zambrzycka, E.

    2015-03-30

    Highlights: • Stability of the core–shell nanowires in environmental solutions were tested. • The most and the least aggressive solutions were determined. • The influence of different solutions on magnetic nanowires core was found out. - Abstract: This paper presents the studies of stability of magnetic core–shell nanowires prepared by electrochemical deposition from an acidic solution containing iron in the core and modified surface layer. The obtained nanowires were tested according to their durability in distilled water, 0.01 M citric acid, 0.9% NaCl, and commercial white wine (12% alcohol). The proposed solutions were chosen in such a way as to mimic food related environment due to a possible application of nanowires as additives to, for example, packages. After 1, 2 and 3 weeks wetting in the solutions, nanoparticles were tested by Infrared Spectroscopy, Atomic Absorption Spectroscopy, Transmission Electron Microscopy and X-ray diffraction methods.

  20. Resonant absorption in semiconductor nanowires and nanowire arrays: Relating leaky waveguide modes to Bloch photonic crystal modes

    Energy Technology Data Exchange (ETDEWEB)

    Fountaine, Katherine T., E-mail: kfountai@caltech.edu [Department of Chemistry and Chemical Engineering, California Institute of Technology, 1200 E. California Blvd., Pasadena, California 91125 (United States); Joint Center for Artificial Photosynthesis, California Institute of Technology, 1200 E. California Blvd., Pasadena, California 91125 (United States); Whitney, William S. [Joint Center for Artificial Photosynthesis, California Institute of Technology, 1200 E. California Blvd., Pasadena, California 91125 (United States); Department of Physics, California Institute of Technology, 1200 E. California Blvd., Pasadena, California 91125 (United States); Atwater, Harry A. [Joint Center for Artificial Photosynthesis, California Institute of Technology, 1200 E. California Blvd., Pasadena, California 91125 (United States); Department of Applied Physics and Materials Science, California Institute of Technology, 1200 E. California Blvd., Pasadena, California 91125 (United States)

    2014-10-21

    We present a unified framework for resonant absorption in periodic arrays of high index semiconductor nanowires that combines a leaky waveguide theory perspective and that of photonic crystals supporting Bloch modes, as array density transitions from sparse to dense. Full dispersion relations are calculated for each mode at varying illumination angles using the eigenvalue equation for leaky waveguide modes of an infinite dielectric cylinder. The dispersion relations along with symmetry arguments explain the selectivity of mode excitation and spectral red-shifting of absorption for illumination parallel to the nanowire axis in comparison to perpendicular illumination. Analysis of photonic crystal band dispersion for varying array density illustrates that the modes responsible for resonant nanowire absorption emerge from the leaky waveguide modes.

  1. Fabrication and PL of Al-doped gallium nitride nanowires

    International Nuclear Information System (INIS)

    Zhou Shaomin

    2006-01-01

    Mass Al-doped GaN nanowires with an average diameter of about 50 nm and lengths up to several millimeters are fabricated by a CVD approach. The as-fabricated products have a single crystal phase and grow along the direction. The growth of Al-doped GaN nanowires is suggested for quasi-vapor-solid mechanism (QVSM). In particular, for as large-scale GaN nanowires, a novel strong ultraviolet PL spectrum (from 3.3 to 3.7 eV) appears with a doping Al where the Al-doped GaN nanowires are found to be responsible for the different characteristics; the PL mechanism is explained in detail

  2. InGaN/GaN Nanowire LEDs and Lasers

    KAUST Repository

    Zhao, Chao

    2016-01-01

    The large specific surface, and the associated high density of surface states was found to limit the light output power and quantum efficiency of nanowire-array devices, despite their potential for addressing the “green-gap” and efficiency-droop issues. The phonon and carrier confinement in nanowires also led to junction heating, and reduced heat dissipation. In this paper, we will present our studies on effective surface states passivation in InGaN/GaN quantum-disks (Qdisks)-in-nanowire light-emitting diodes (LEDs) and lasers grown on silicon (Si), as well as our recent work on nanowires LEDs grown on bulk-metal, a non-conventional substrate.

  3. First-principles study of structural & electronic properties of pyramidal silicon nanowire

    Energy Technology Data Exchange (ETDEWEB)

    Jariwala, Pinank; Thakor, P. B. [Department of Physics, Veer Narmad South Gujarat University, Surat 395 007, Gujarat (India); Singh, Deobrat; Sonvane, Y. A., E-mail: yasonvane@gmail.com [Department of Applied Physics, S. V. National Institute of Technology, Surat 395 007 (India); Gupta, Sanjeev K. [Department of Physics, St. Xavier’s College, Ahmedabad 38 0009 (India)

    2016-05-23

    We have investigated the stable structural and electronic properties of Silicon (Si) nanowires having different cross-sections with 5-7 Si atoms per unit cell. These properties of the studied Si nanowires were significantly changed from those of diamond bulk Si structure. The binding energy increases as increasing atoms number per unit cell in different SiNWs structures. All the nanowires structures are behave like metallic rather than semiconductor in bulk systems. In general, the number of conduction channels increases when the nanowire becomes thicker. The density of charge revealed delocalized metallic bonding for all studied Si nanowires.

  4. Optical properties of Mg doped p-type GaN nanowires

    Science.gov (United States)

    Patsha, Avinash; Pandian, Ramanathaswamy; Dhara, S.; Tyagi, A. K.

    2015-06-01

    Mg doped p-type GaN nanowires are grown using chemical vapor deposition technique in vapor-liquid-solid (VLS) process. Morphological and structural studies confirm the VLS growth process of nanowires and wurtzite phase of GaN. We report the optical properties of Mg doped p-type GaN nanowires. Low temperature photoluminescence studies on as-grown and post-growth annealed samples reveal the successful incorporation of Mg dopants. The as-grwon and annealed samples show passivation and activation of Mg dopants, respectively, in GaN nanowires.

  5. Nanoconstruction by welding individual metallic nanowires together using nanoscale solder

    International Nuclear Information System (INIS)

    Peng, Y; Inkson, B J; Cullis, A G

    2010-01-01

    This work presents a new bottom-up nanowelding technique enabling building blocks to be assembled and welded together into complex 3D nanostructures using nanovolumes of metal solder. The building blocks of gold nanowires, (Co 72 Pt 28 /Pt) n multilayer nanowires, and nanosolder Sn 99 Au 1 alloy nanowires were successfully fabricated by a template technique. Individual metallic nanowires were picked up and assembled together. Conductive nanocircuits were then welded together using similar or dissimilar nanosolder material. At the weld sites, nanoscale volumes of a chosen metal are deposited using nanosolder of a sacrificial nanowire, which ensures that the nanoobjects to be bonded retain their structural integrity. The whole nanowelding process is clean, controllable and reliable, and ensures both mechanically strong and electrically conductive contacts.

  6. Synthesis of silver nanowires using hydrothermal technique for flexible transparent electrode application

    Energy Technology Data Exchange (ETDEWEB)

    Vijila, C. V. Mary; Rahman, K. K. Arsina; Parvathy, N. S.; Jayaraj, M. K., E-mail: mkj@cusat.ac.in [Nanophotonic and Optoelectronic Division, Dept. of Physics, Cochin University of Science and Technology, Kochi, Kerala (India)

    2016-05-23

    Transparent conducting films are becoming increasingly interesting because of their applications in electronics industry such as their use in solar energy applications. In this work silver nanowires were synthesized using solvothermal method by reducing silver nitrate and adding sodium chloride for assembling silver into nanowires. Absorption spectra of nanowires in the form of a dispersion in deionized water, AFM and SEM images confirm the nanowire formation. Solution of nanowire was coated over PET films to obtain transparent conducting films.

  7. Growth and Raman spectroscopy studies of gold-free catalyzed semiconductor nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Zardo, Ilaria

    2010-12-15

    The present Ph.D. thesis proposes two aims: the search for catalysts alternative to gold for the growth of silicon nanowires and the investigation of the structural properties of the gold-free catalyzed Si, Ge, and GaAs nanowires. The successful growth of gold free catalyzed silicon nanowires was obtained using Ga and In as catalyst. Hydrogen plasma conditions were needed during the growth process. We proposed a growth mechanism where the role of the hydrogen plasma is taken into account. The influence of the growth conditions on nanowire growth morphology and structural properties was investigated in detail. The TEM studies showed the occurrence of different kind of twin defects depending on the nanowire growth direction. The intersection of twins in different spatial directions in <111>-oriented nanowires or the periodicity of highly dense twins in <112>-oriented nanowires leads to the formation of hexagonal domains embedded in the diamond silicon structure. A simple crystallographic model which illustrates the formation of the hexagonal phase was proposed. The presence of the hexagonal domains embedded in the diamond silicon structure was investigated also by means of Raman spectroscopy. The measured frequencies of the E2g and A1g modes were found to be in agreement with frequencies expected from phonon dispersion folding. An estimation of the percentage of hexagonal structure with respect to the cubic structure was given. The relative percentage of the two structures was found to change with growth temperature. Spatially resolved Raman scattering experiments were also realized on single Si nanowires. The lattice dynamics of gold-free catalyzed Ge and GaAs nanowires was studied by means of Raman spectroscopy. We performed spatially resolved Raman spectroscopy experiments on single crystalline- amorphous core-shell Ge nanowires. The correlation with TEM studies on nanowires grown under the same conditions and with AFM measurements realized of the same nanowires

  8. Fibroblasts Cultured on Nanowires Exhibit Low Motility, Impaired Cell Division, and DNA Damage

    DEFF Research Database (Denmark)

    Persson, H.; Købler, Carsten; Mølhave, Kristian

    2013-01-01

    beam milling and scanning electron microscopy, highly curved but intact nuclear membranes are observed, showing no direct contact between the nanowires and the DNA. The nanowires possibly induce cellular stress and high respiration rates, which trigger the formation of ROS, which in turn results in DNA......Nanowires are commonly used as tools for interfacing living cells, acting as biomolecule-delivery vectors or electrodes. It is generally assumed that the small size of the nanowires ensures a minimal cellular perturbation, yet the effects of nanowires on cell migration and proliferation remain...... largely unknown. Fibroblast behaviour on vertical nanowire arrays is investigated, and it is shown that cell motility and proliferation rate are reduced on nanowires. Fibroblasts cultured on long nanowires exhibit failed cell division, DNA damage, increased ROS content and respiration. Using focused ion...

  9. A Miniaturize Bandpass Filter with Harmonic Suppression Using Meandered Quarter-Wavelength Resonators

    Directory of Open Access Journals (Sweden)

    Yun-Long Lu

    2014-01-01

    Full Text Available A miniaturized bandpass filter with harmonics suppression is presented. The proposed filter consists of two quarter-wavelength microstrip resonators, which are meandered for circuit size reduction. An interdigital capacitor, loading at zero-voltage point, is employed to provide the desired coupling between the resonators at operating frequency, whereas the coupling coefficient at the third harmonic is realized to be zero. Besides, the second and fourth harmonics are suppressed since λ/4 resonators are adopted. Benefiting from these properties, a miniaturized bandpass filter with the second, third, and fourth harmonics suppression was designed and implemented. The final measured and simulated results show good consistence with the theoretical counterparts.

  10. Water-vapor-enhanced growth of Ge-GeOx core-shell nanowires and Si1-xGexOy nanowires

    International Nuclear Information System (INIS)

    Hsu, T-J; Ko, C-Y; Lin, W-T

    2007-01-01

    The effects of moist Ar on the growth of Ge-GeO x core-shell nanowires (Ge-GeO x NWs) and Si 1-x Ge x O y nanowires (SiGeONWs) on Si substrates without adding a metal catalyst via the carbothermal reduction of GeO 2 powders at 1100 deg. C were studied. No significant nanowires were grown in dry Ar at a flow rate of 100-300 sccm until a bit of water in the range of 0.5-2 ml was loaded into the furnace. More water suppressed the growth of nanowires because of the exhaustion of more graphite powder. The growth of Ge-GeO x NWs and SiGeONWs follows the vapor-solid and vapor-liquid-solid processes, respectively. The present study showed that the water vapor serves as an oxidizer as well as a reducer at 1100 deg. C in enhancing the growth of SiGeONWs and Ge-GeO x NWs, respectively. The growth mechanisms of Ge-GeO x NWs and SiGeONWs are also discussed

  11. Electronic transport behavior of diameter-graded Ag nanowires

    International Nuclear Information System (INIS)

    Wang Xuewei; Yuan Zhihao

    2010-01-01

    Ag nanowires with a graded diameter in anodic aluminum oxide (AAO) membranes were fabricated by the direct-current electrodeposition. The Ag nanowires have a graded-change in diameter from 8 to 32 nm, which is matched with the graded-change of the AAO pore diameter. Electronic transport measurements show that there is a transport behavior similar to that of a metal-semiconductor junction along the axial direction in the diameter-graded Ag nanowires. Such a novel homogeneous nanojunction will be of great fundamental and practical significance.

  12. Electronic transport behavior of diameter-graded Ag nanowires

    Science.gov (United States)

    Wang, Xue Wei; Yuan, Zhi Hao

    2010-05-01

    Ag nanowires with a graded diameter in anodic aluminum oxide (AAO) membranes were fabricated by the direct-current electrodeposition. The Ag nanowires have a graded-change in diameter from 8 to 32 nm, which is matched with the graded-change of the AAO pore diameter. Electronic transport measurements show that there is a transport behavior similar to that of a metal-semiconductor junction along the axial direction in the diameter-graded Ag nanowires. Such a novel homogeneous nanojunction will be of great fundamental and practical significance.

  13. Three-dimensional phase-field simulation on the deformation of metallic glass nanowires

    International Nuclear Information System (INIS)

    Zhang, H.Y.; Zheng, G.P.

    2014-01-01

    Highlights: • 3D phase-field modeling is developed to investigate the deformation of MG nanowires. • The surface defects significantly affect the mechanical properties of nanowires. • Multiple shear bands are initiated from the surfaces of nanowires with D < 50 nm. - Abstract: It is very challenging to investigate the deformation mechanisms in micro- and nano-scale metallic glasses with diameters below several hundred nanometers using the atomistic simulation or the experimental approaches. In this work, we develop the fully three-dimensional phase-field model to bridge this gap and investigate the sample size effects on the deformation behaviors of metallic glass nanowires. The initial deformation defects on the surface are found to significantly affect the mechanical strength and deformation mode of nanowires. The improved ductility of metallic glass nanowires could be related with the multiple shear bands initiated from the nanowire surfaces

  14. Synthesis of platinum nanowire networks using a soft template.

    Science.gov (United States)

    Song, Yujiang; Garcia, Robert M; Dorin, Rachel M; Wang, Haorong; Qiu, Yan; Coker, Eric N; Steen, William A; Miller, James E; Shelnutt, John A

    2007-12-01

    Platinum nanowire networks have been synthesized by chemical reduction of a platinum complex using sodium borohydride in the presence of a soft template formed by cetyltrimethylammonium bromide in a two-phase water-chloroform system. The interconnected polycrystalline nanowires possess the highest surface area (53 +/- 1 m2/g) and electroactive surface area (32.4 +/- 3.6 m2/g) reported for unsupported platinum nanomaterials; the high surface area results from the small average diameter of the nanowires (2.2 nm) and the 2-10 nm pores determined by nitrogen adsorption measurements. Synthetic control over the network was achieved simply by varying the stirring rate and reagent concentrations, in some cases leading to other types of nanostructures including wormlike platinum nanoparticles. Similarly, substitution of a palladium complex for platinum gives palladium nanowire networks. A mechanism of formation of the metal nanowire networks is proposed based on confined metal growth within a soft template consisting of a network of swollen inverse wormlike micelles.

  15. Magnetotransport and magnetization reversal of electrodeposited multilayer nanowires

    Science.gov (United States)

    Tang, Xueti

    2007-12-01

    Electrodeposited magnetic multilayer nanowires are ideal materials to study nanoscale magnetism and the giant magnetoresistance (GMR) in the current-perpendicular-to-plane (CPP) geometry. This is because the diameter of each nanowire is uniform, the surface of the nanowire is smooth, and the thickness of both the magnetic and non-magnetic layers can be varied to either larger or smaller than the spin diffusion length which is an important parameter in magnetotransport study. In addition, the aspect ratio (layer-thickness/diameter) that is related to shape anisotropy can be varied for magnetization reversal study. There has been little understanding in the magnetization reversal mechanism of multilayer nanowires, which is complicated due to the dipolar interactions between magnetic layers in each nanowire and between nanowires. The objective of this work is to study the magnetization reversal mechanism of multilayer nanowires using a vibrating sample magnetometer (VSM), where various dipolar interactions are taken into account. Although multilayer nanowires are ideal for the study of the CPP-GMR effect, there remains technical difficulty in making an electrical contact with individual nanowires for the CPP-GMR measurements. In this work, a point-contact method using a conductive plunger tip was developed in-house, that enabled us to measure the CPP-GMR of selected multilayer nanowires in an array of vertically aligned nanowires in each sample. To examine the CPP-GMR and compare the results with theoretical models, the CPP-GMR data were systematically obtained from samples with various magnetic and non-magnetic layer thicknesses. It was found from VSM measurement that the magnetization reversal mode in electrodeposited CoNi/Cu multilayer nanowires depends on the shape and thickness of the CoNi layers where the mode in rod-shaped thick CoNi layers is different from that in disk-shaped thin CoNi layers. The reversal mode in coherent rotation or curling was determined

  16. Domain wall propagation tuning in magnetic nanowires through geometric modulation

    Energy Technology Data Exchange (ETDEWEB)

    Arzuza, L.C.C., E-mail: luisarzuza179@gmail.com [Instituto de Física Gleb Wataghin, Universidade Estadual de Campinas, 13083-859 Campinas (SP) (Brazil); Universidad de la Costa, Departamento de Ciencias Naturales y Exactas, Calle 58 No. 55-66, Barranquilla (Colombia); López-Ruiz, R. [Instituto de Física Gleb Wataghin, Universidade Estadual de Campinas, 13083-859 Campinas (SP) (Brazil); Salazar-Aravena, D. [Instituto de Física Gleb Wataghin, Universidade Estadual de Campinas, 13083-859 Campinas (SP) (Brazil); Departamento de Física, Facultad de Ciencias, Universidad de Tarapacá, 1000007 Arica (Chile); Knobel, M. [Instituto de Física Gleb Wataghin, Universidade Estadual de Campinas, 13083-859 Campinas (SP) (Brazil); Brazilian Nanotechnology National Laboratory, Centro Nacional de Pesquisa em Energia e Materiais (CNPEM), 13083-970 Campinas (SP) (Brazil); Béron, F.; Pirota, K.R. [Instituto de Física Gleb Wataghin, Universidade Estadual de Campinas, 13083-859 Campinas (SP) (Brazil)

    2017-06-15

    Highlights: • The modulated nanowires dynamics occurs through two reversal modes. • Modulated nanowires show a change in the χ in contrast to homogeneous ones. • The FORC method reveals a non-uniform stray field due to shape modulation. - Abstract: The magnetic behavior of nickel modulated nanowires embedded in porous alumina membranes is investigated. Their diameters exhibit a sharp transition between below (35 nm) and above (52 nm) the theoretical limit for transverse and vortex domain walls. Magnetic hysteresis loops and first-order reversal curves (FORCs) were measured on several ordered nanowire arrays with different wide-narrow segment lengths ratio and compared with those from homogenous nanowires. The experimental magnetic response evidences a rather complex susceptibility behavior for nanowires with modulated diameter. Micromagnetic simulations on isolated and first-neighbors arrays of nanowires show that the domain wall structure, which depends on the segment diameter, suffers a transformation while crossing the diameter modulation, but without any pinning. The experimental array magnetic behavior can be ascribed to a heterogeneous stray field induced by the diameter modulation, yielding a stronger interaction field at the wide extremity than at the narrow one. The results evidence the possibility to control the domain wall propagation and morphology by modulating the lateral aspect of the magnetic entity.

  17. Wurtzite InP nanowire arrays grown by selective area MOCVD

    International Nuclear Information System (INIS)

    Chu, Hyung-Joon; Stewart, Lawrence; Yeh, Ting-Wei; Dapkus, P.D.

    2010-01-01

    InP nanowires are a unique material phase because this normally zincblende material forms in the wurtzite crystal structure below a critical diameter owing to the contribution of sidewalls to the total formation energy. This may allow control of the carrier transport and optical properties of InP nanowires for applications such as nano scale transistors, lasers and detectors. In this work, we describe the fabrication of InP nanowire arrays by selective area growth using MOCVD in the diameter range where the wurtzite structure is formed. The spatial growth rate in selective area growth is modeled by a diffusion model for the precursors. The proposed model achieves an average error of 9%. Electron microscopy shows that the grown InP nanowires are in the wurtzite crystal phase with many stacking faults. The threshold diameter of the crystal phase transition of InP nanowires is larger than the thermodynamic estimation. In order to explain this tendency, we propose a surface kinetics model based on a 2 x 2 reconstruction. This model can explain the increased tendency for wurtzite nanowire formation on InP (111)A substrates and the preferred growth direction of binary III-V compound semiconductor nanowires. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Complex Electric-Field Induced Phenomena in Ferroelectric/Antiferroelectric Nanowires

    Science.gov (United States)

    Herchig, Ryan Christopher

    Perovskite ferroelectrics and antiferroelectrics have attracted a lot of attention owing to their potential for device applications including THz sensors, solid state cooling, ultra high density computer memory, and electromechanical actuators to name a few. The discovery of ferroelectricity at the nanoscale provides not only new and exciting possibilities for device miniaturization, but also a way to study the fundamental physics of nanoscale phenomena in these materials. Ferroelectric nanowires show a rich variety of physical characteristics which are advantageous to the design of nanoscale ferroelectric devices such as exotic dipole patterns, a strong dependence of the polarization and phonon frequencies on the electrical and mechanical boundary conditions, as well as a dependence of the transition temperatures on the diameter of the nanowire. Antiferroelectricity also exists at the nanoscale and, due to the proximity in energy of the ferroelectric and antiferroelectric phases, a phase transition from the ferroelectric to the antiferroelectric phase can be facilitated through the application of the appropriate mechanical and electrical boundary conditions. While much progress has been made over the past several decades to understand the nature of ferroelectricity/antiferroelectricity in nanowires, many questions remain unanswered. In particular, little is known about how the truncated dimensions affect the soft mode frequency dynamics or how various electrical and mechanical boundary conditions might change the nature of the phase transitions in these ferroelectric nanowires. Could nanowires offer a distinct advantage for solid state cooling applications? Few studies have been done to elucidate the fundamental physics of antiferroelectric nanowires. How the polarization in ferroelectric nanowires responds to a THz electric field remains relatively underexplored as well. In this work, the aim is to to develop and use computational tools that allow first

  19. Substrate and Mg doping effects in GaAs nanowires

    Directory of Open Access Journals (Sweden)

    Perumal Kannappan

    2017-10-01

    Full Text Available Mg doping of GaAs nanowires has been established as a viable alternative to Be doping in order to achieve p-type electrical conductivity. Although reports on the optical properties are available, few reports exist about the physical properties of intermediate-to-high Mg doping in GaAs nanowires grown by molecular beam epitaxy (MBE on GaAs(111B and Si(111 substrates. In this work, we address this topic and present further understanding on the fundamental aspects. As the Mg doping was increased, structural and optical investigations revealed: i a lower influence of the polytypic nature of the GaAs nanowires on their electronic structure; ii a considerable reduction of the density of vertical nanowires, which is almost null for growth on Si(111; iii the occurrence of a higher WZ phase fraction, in particular for growth on Si(111; iv an increase of the activation energy to release the less bound carrier in the radiative state from nanowires grown on GaAs(111B; and v a higher influence of defects on the activation of nonradiative de-excitation channels in the case of nanowires only grown on Si(111. Back-gate field effect transistors were fabricated with individual nanowires and the p-type electrical conductivity was measured with free hole concentration ranging from 2.7 × 1016 cm−3 to 1.4 × 1017 cm−3. The estimated electrical mobility was in the range ≈0.3–39 cm2/Vs and the dominant scattering mechanism is ascribed to the WZ/ZB interfaces. Electrical and optical measurements showed a lower influence of the polytypic structure of the nanowires on their electronic structure. The involvement of Mg in one of the radiative transitions observed for growth on the Si(111 substrate is suggested.

  20. Optical and field emission properties of layer-structure GaN nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Cui, Zhen [Science School, Xi’an University of Technology, Xi’an 710048 (China); School of automation and Information Engineering, Xi’an University of Technology, Xi’an 710048 (China); Li, Enling, E-mail: Lienling@xaut.edu.cn [Science School, Xi’an University of Technology, Xi’an 710048 (China); Shi, Wei; Ma, Deming [Science School, Xi’an University of Technology, Xi’an 710048 (China)

    2014-08-15

    Highlights: • The layer-structure GaN nanowires with hexagonal-shaped cross-sections are produced via a process based on the CVD method. • The diameter of the layer-structure GaN nanowire gradually decreases from ∼500 nm to ∼200 nm along the wire axis. • The layer-structure GaN nanowire film possesses good field emission property. - Abstract: A layer-structure gallium nitride (GaN) nanowires, grown on Pt-coated n-type Si (1 1 1) substrate, have been synthesized using chemical vapor deposition (CVD). The results show: (1) SEM indicates that the geometry structure is layer-structure. HRTEM indicates that GaN nanowire’s preferential growth direction is along [0 0 1] direction. (2) The room temperature PL emission spectrum of the layer-structure GaN nanowires has a peak at 375 nm, which proves that GaN nanowires have potential application in light-emitting nano-devices. (3) Field-emission measurements show that the layer-structure GaN nanowires film has a low turn-on field of 4.39 V/μm (at room temperature), which is sufficient for electron emission devices, field emission displays and vacuum nano-electronic devices. The growth mechanism for GaN nanowires has also been discussed briefly.

  1. Biocatalytic synthesis of polymeric nanowires by micellar templates of ionic surfactants

    Energy Technology Data Exchange (ETDEWEB)

    Nazari, K., E-mail: nazarikh@ripi.ir [Research Institute of Petroleum Industry, NIOC, P.O. Box 14665-137, Tehran (Iran, Islamic Republic of); Chemistry Dept., Shahr Rey Islamic Azad University, P.O. Box 18735-334, Tehran (Iran, Islamic Republic of); Adhami, F.; Najjar-Safari, A.; Salmani, S. [Chemistry Dept., Shahr Rey Islamic Azad University, P.O. Box 18735-334, Tehran (Iran, Islamic Republic of); Mahmoudi, A. [Chemistry Dept., Karaj Islamic Azad University, Karaj (Iran, Islamic Republic of)

    2011-07-15

    Highlights: {yields} Soft-template production of polyguaiacol nanowire was done by peroxidase enzyme. {yields} Main advantage of this simple method is producing soluble encapsulated nanowires. {yields} Nanowire can be easily precipitated and separated by dilution with distilled water. {yields} Size tuned templates of sodium decyl sulfate (d = 2.7 nm) gave nanowires with d = 2-4 nm. {yields} Dried surfactant-coated wires recover freshly on specified and desired applications. -- Abstract: Micelle-templated polyguaiacol nanowires were successfully prepared via polymerization oxidation of guaiacol (o-methoxy phenol) by peroxidase enzyme in the presence of hydrogen peroxide at mild reaction conditions. The dimensions of the prepared nanowires were controlled by tuning the size and shape of the micelle structure via changing and controlling the type, chain length and molar concentrations of the ionic surfactant. The progress of the reaction and estimation of the size of soft micellar templates were followed by UV-Vis spectroscopy and dynamic light scattering (DLS). The resulting micelle encapsulated or purified polyguaiacol nanowires were characterized using transmission electron microscopy (TEM).

  2. Biocatalytic synthesis of polymeric nanowires by micellar templates of ionic surfactants

    International Nuclear Information System (INIS)

    Nazari, K.; Adhami, F.; Najjar-Safari, A.; Salmani, S.; Mahmoudi, A.

    2011-01-01

    Highlights: → Soft-template production of polyguaiacol nanowire was done by peroxidase enzyme. → Main advantage of this simple method is producing soluble encapsulated nanowires. → Nanowire can be easily precipitated and separated by dilution with distilled water. → Size tuned templates of sodium decyl sulfate (d = 2.7 nm) gave nanowires with d = 2-4 nm. → Dried surfactant-coated wires recover freshly on specified and desired applications. -- Abstract: Micelle-templated polyguaiacol nanowires were successfully prepared via polymerization oxidation of guaiacol (o-methoxy phenol) by peroxidase enzyme in the presence of hydrogen peroxide at mild reaction conditions. The dimensions of the prepared nanowires were controlled by tuning the size and shape of the micelle structure via changing and controlling the type, chain length and molar concentrations of the ionic surfactant. The progress of the reaction and estimation of the size of soft micellar templates were followed by UV-Vis spectroscopy and dynamic light scattering (DLS). The resulting micelle encapsulated or purified polyguaiacol nanowires were characterized using transmission electron microscopy (TEM).

  3. Tunable absorption resonances in the ultraviolet for InP nanowire arrays.

    Science.gov (United States)

    Aghaeipour, Mahtab; Anttu, Nicklas; Nylund, Gustav; Samuelson, Lars; Lehmann, Sebastian; Pistol, Mats-Erik

    2014-11-17

    The ability to tune the photon absorptance spectrum is an attracting way of tailoring the response of devices like photodetectors and solar cells. Here, we measure the reflectance spectra of InP substrates patterned with arrays of vertically standing InP nanowires. Using the reflectance spectra, we calculate and analyze the corresponding absorptance spectra of the nanowires. We show that we can tune absorption resonances for the nanowire arrays into the ultraviolet by decreasing the diameter of the nanowires. When we compare our measurements with electromagnetic modeling, we generally find good agreement. Interestingly, the remaining differences between modeled and measured spectra are attributed to a crystal-phase dependence in the refractive index of InP. Specifically, we find indication of significant differences in the refractive index between the modeled zinc-blende InP nanowires and the measured wurtzite InP nanowires in the ultraviolet. We believe that such crystal-phase dependent differences in the refractive index affect the possibility to excite optical resonances in the large wavelength range of 345 InP nanowire-based solar cells and photodetectors.

  4. Lasing and ion beam doping of semiconductor nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Geburt, Sebastian

    2013-01-31

    Semiconductor nanowires exhibit extraordinary optical properties like highly localized light emission, efficient waveguiding and light amplification. Even the stimulation of laser oscillations can be achieved at optical pumping, making nanowires promising for optoelectronic applications. For successful integration into future devices, three major key challenges have to be faced: (1) the understanding of the fundamental properties, (2) the modification of the emission characteristics and (3) the investigation of the efficiency-limiting factors. All key challenges are addressed in this thesis: (1) The fundamental properties of CdS nanowire have been investigated to uncover the size limits for photonic nanowire lasers. Laser oscillations were observed at room temperature and the emission characteristics were correlated to the morphology, which allowed the determination of a minimum diameter and length necessary for lasing. (2) The emission characteristics of ZnO nanowires have been successfully modified by ion beam doping with Co. The structural investigations revealed a good recovery of the ion induced damage in the crystal lattice. Optical activation of the implanted Co ions was achieved and an intense intra-3d-emission confirmed successful modification. (3) The temporal decay of excited luminescence centers strongly depends on the interplay of luminescent ions and defects, thus offering an approach to investigate the efficiency-limiting processes. Mn implanted ZnS nanowires were investigated, as the temporal decay of the incorporated Mn ions can be described by a Foerster energy transfer model modified for nanostructures. The defect concentration was varied systematically by several approaches and the model could successfully fit the transients in all cases. The emission properties of Tb implanted ZnS nanowires were investigated and the temporal decay of the intra-4f-emission could also be fitted by the model, proving its accuracy for an additional element.

  5. Lasing and ion beam doping of semiconductor nanowires

    International Nuclear Information System (INIS)

    Geburt, Sebastian

    2013-01-01

    Semiconductor nanowires exhibit extraordinary optical properties like highly localized light emission, efficient waveguiding and light amplification. Even the stimulation of laser oscillations can be achieved at optical pumping, making nanowires promising for optoelectronic applications. For successful integration into future devices, three major key challenges have to be faced: (1) the understanding of the fundamental properties, (2) the modification of the emission characteristics and (3) the investigation of the efficiency-limiting factors. All key challenges are addressed in this thesis: (1) The fundamental properties of CdS nanowire have been investigated to uncover the size limits for photonic nanowire lasers. Laser oscillations were observed at room temperature and the emission characteristics were correlated to the morphology, which allowed the determination of a minimum diameter and length necessary for lasing. (2) The emission characteristics of ZnO nanowires have been successfully modified by ion beam doping with Co. The structural investigations revealed a good recovery of the ion induced damage in the crystal lattice. Optical activation of the implanted Co ions was achieved and an intense intra-3d-emission confirmed successful modification. (3) The temporal decay of excited luminescence centers strongly depends on the interplay of luminescent ions and defects, thus offering an approach to investigate the efficiency-limiting processes. Mn implanted ZnS nanowires were investigated, as the temporal decay of the incorporated Mn ions can be described by a Foerster energy transfer model modified for nanostructures. The defect concentration was varied systematically by several approaches and the model could successfully fit the transients in all cases. The emission properties of Tb implanted ZnS nanowires were investigated and the temporal decay of the intra-4f-emission could also be fitted by the model, proving its accuracy for an additional element.

  6. Si nanowires/Cu nanowires bilayer fabric as a lithium ion capacitor anode with excellent performance

    Science.gov (United States)

    Lai, Chien-Ming; Kao, Tzu-Lun; Tuan, Hsing-Yu

    2018-03-01

    A light and binder-free bilayer fabric electrode composed of silicon nanowires and copper nanowires for lithium-ion capacitors (LICs) is reported. A lithium ion capacitor is proposed employing pre-lithiated silicon/copper nanowire fabric and activated carbon as the anode and the cathode, respectively. These LICs show remarkable performance with a specific capacitance of 156 F g-1 at 0.1 A g-1, which is approximately twice of that of activated carbon in electric double-layer capacitors (EDLCs), and still exhibit a fine specific capacitance of 68 F g-1 even at a high current density of 20 A g-1. At a low power density of 193 W kg-1, the Si/Cu fabric//AC LIC can achieve high energy density of 210 W h kg-1. As the power density is increased to 99 kW kg-1, the energy density still remains at 43 W h kg-1, showing the prominent rate performance.

  7. Conducting polymer nanowire arrays for high performance supercapacitors.

    Science.gov (United States)

    Wang, Kai; Wu, Haiping; Meng, Yuena; Wei, Zhixiang

    2014-01-15

    This Review provides a brief summary of the most recent research developments in the fabrication and application of one-dimensional ordered conducting polymers nanostructure (especially nanowire arrays) and their composites as electrodes for supercapacitors. By controlling the nucleation and growth process of polymerization, aligned conducting polymer nanowire arrays and their composites with nano-carbon materials can be prepared by employing in situ chemical polymerization or electrochemical polymerization without a template. This kind of nanostructure (such as polypyrrole and polyaniline nanowire arrays) possesses high capacitance, superior rate capability ascribed to large electrochemical surface, and an optimal ion diffusion path in the ordered nanowire structure, which is proved to be an ideal electrode material for high performance supercapacitors. Furthermore, flexible, micro-scale, threadlike, and multifunctional supercapacitors are introduced based on conducting polyaniline nanowire arrays and their composites. These prototypes of supercapacitors utilize the high flexibility, good processability, and large capacitance of conducting polymers, which efficiently extend the usage of supercapacitors in various situations, and even for a complicated integration system of different electronic devices. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Thermodynamic photoinduced disorder in AlGaN nanowires

    KAUST Repository

    Alfaraj, Nasir; Muhammed, Mufasila Mumthaz; Li, Kuang-Hui; Janjua, Bilal; Aljefri, Renad A.; Sun, Haiding; Ng, Tien Khee; Ooi, Boon S.; Roqan, Iman S.; Li, Xiaohang

    2017-01-01

    In this study, we examine thermodynamic photoinduced disorder in AlGaN nanowires through their steady-state and transient photoluminescence properties. We correlate the energy exchange during the photoexcitation and photoemission processes of the light–solid reaction and the generation of photoinduced entropy of the nanowires using temperature-dependent (6 K to 290 K) photoluminescence. We observed an oscillatory trend in the generated entropy of the system below 200 K, with an oscillation frequency that was significantly lower than what we have previously observed in InGaN/GaN nanowires. In contrast to the sharp increase in generated entropy at temperatures close to room temperature in InGaN/GaN nanowires, an insignificant increase was observed in AlGaN nanowires, indicating lower degrees of disorder-induced uncertainty in the wider bandgap semiconductor. We conjecture that the enhanced atomic ordering in AlGaN caused lower degrees of disorder-induced uncertainty related to the energy of states involved in thermionic transitions; in keeping with this conjecture, we observed lower oscillation frequency below 200 K and a stable behavior in the generated entropy at temperatures close to room temperature.

  9. Thermodynamic photoinduced disorder in AlGaN nanowires

    KAUST Repository

    Alfaraj, Nasir

    2017-12-13

    In this study, we examine thermodynamic photoinduced disorder in AlGaN nanowires through their steady-state and transient photoluminescence properties. We correlate the energy exchange during the photoexcitation and photoemission processes of the light–solid reaction and the generation of photoinduced entropy of the nanowires using temperature-dependent (6 K to 290 K) photoluminescence. We observed an oscillatory trend in the generated entropy of the system below 200 K, with an oscillation frequency that was significantly lower than what we have previously observed in InGaN/GaN nanowires. In contrast to the sharp increase in generated entropy at temperatures close to room temperature in InGaN/GaN nanowires, an insignificant increase was observed in AlGaN nanowires, indicating lower degrees of disorder-induced uncertainty in the wider bandgap semiconductor. We conjecture that the enhanced atomic ordering in AlGaN caused lower degrees of disorder-induced uncertainty related to the energy of states involved in thermionic transitions; in keeping with this conjecture, we observed lower oscillation frequency below 200 K and a stable behavior in the generated entropy at temperatures close to room temperature.

  10. Study of the thermal conductivity of ZnO nanowires/PMMA composites

    International Nuclear Information System (INIS)

    Igamberdiev, Kh. T.; Yuldashev, Sh. U.; Cho, H. D.; Kang, T. W.; Rakhimova, Sh. M.; Akhmedov, T. Kh.

    2012-01-01

    From thermal conductivity measurements on ZnO nanowires (NWs)/poly(methyl methacrylate) PMMA composites, the thermal conductivities of the ZnO nanowires were determined. The thermal conductivity of a ZnO NW decreases considerably with decreasing nanowire diameter, and for a ZnO nanowire with a diameter of 250 nm, the thermal conductivity at room temperature is approximately two times lower than that of bulk ZnO at the same temperature. The results of this study show that the thermal conductivity of a ZnO NW is mainly determined by increased phonon-surface boundary scattering. These results could be useful for the design of ZnO-nanowire-based devices.

  11. Focused ion beam patterning to dielectrophoretically assemble single nanowire based devices

    International Nuclear Information System (INIS)

    La Ferrara, V; Massera, E; Francia, G Di; Alfano, B

    2010-01-01

    Direct-write processing is increasingly taking place in nanodevice fabrication. In this work, Focused Ion Beam (FIB), a powerful tool in maskless micromachining, is used for electrode patterning onto a silicon/silicon nitride substrate. Then a single palladium nanowire is assembled between electrodes by means of dielectrophoresis (DEP). The nanowire morphology depends on the electrode pattern when DEP conditions are fixed. FIB/DEP combination overcomes the problem of nanowire electrical contamination due to gallium ion bombardment and the as-grown nanowire retains its basic electrical properties. Single nanowire based devices have been fabricated with this novel approach and have been tested as hydrogen sensors, confirming the reliability of this technology.

  12. Tuning wettability of hydrogen titanate nanowire mesh by Na+ irradiation

    Science.gov (United States)

    Das, Pritam; Chatterjee, Shyamal

    2018-04-01

    Hydrogen titanate (HT) nanowires have been widely studied for remarkable properties and various potential applications. However, a handful studies are available related to ion beam induced structural changes and influence on wetting behavior of the HT nanowire surface. In this work, we exposed HT nanowires to 5 keV Na+ at an ion fluence of 1×1016 ions.cm-2. Scanning electron microscope shows that at this ion fluence nanowires are bent arbitrarily and they are welded to each other forming an interlinked network structure. Computer simulation shows that ion beam induces defect formation in the nanowires, which plays major role in such structural modifications. An interesting alteration of surface wetting property is observed due to ion irradiation. The hydrophilic pristine surface turns into hydrophobic after ion irradiation.

  13. Domain wall oscillations induced by spin torque in magnetic nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Sbiaa, R., E-mail: rachid@squ.edu.om [Department of Physics, Sultan Qaboos University, P.O. Box 36, PC 123, Muscat (Oman); Chantrell, R. W. [Department of Physics, University of York, York YO10 5DD (United Kingdom)

    2015-02-07

    Using micromagnetic simulations, the effects of the non-adiabatic spin torque (β) and the geometry of nanowires on domain wall (DW) dynamics are investigated. For the case of in-plane anisotropy nanowire, it is observed that the type of DW and its dynamics depends on its dimension. For a fixed length, the critical switching current decreases almost exponentially with the width W, while the DW speed becomes faster for larger W. For the case of perpendicular anisotropy nanowire, it was observed that DW dynamics depends strongly on β. For small values of β, oscillations of DW around the center of nanowire were revealed even after the current is switched off. In addition to nanowire geometry and intrinsic material properties, β could provide a way to control DW dynamics.

  14. Synthesis and Fluorescence Property of Mn-Doped ZnSe Nanowires

    Directory of Open Access Journals (Sweden)

    Dongmei Han

    2010-01-01

    Full Text Available Water-soluble Mn-doped ZnSe luminescent nanowires were successfully prepared by hydrothermal method without any heavy metal ions and toxic reagents. The morphology, composition, and property of the products were investigated. The experimental results showed that the Mn-doped ZnSe nanowires were single well crystallized and had a zinc blende structure. The average length of the nanowires was about 2-3 μm, and the diameter was 80 nm. With the increase of Mn2+-doped concentration, the absorbance peak showed large difference. The UV-vis absorbance spectrum showed that the Mn-doped ZnSe nanowires had a sharp absorption band appearing at 360 nm. The PL spectrum revealed that the nanowires had two distinct emission bands centered at 432 and 580 nm.

  15. Silicon Nanowires for All-Optical Signal Processing in Optical Communication

    DEFF Research Database (Denmark)

    Pu, Minhao; Hu, Hao; Ji, Hua

    2012-01-01

    Silicon (Si), the second most abundant element on earth, has dominated in microelectronics for many decades. It can also be used for photonic devices due to its transparency in the range of optical telecom wavelengths which will enable a platform for a monolithic integration of optics...... and microelectronics. Silicon photonic nanowire waveguides fabricated on silicon-on-insulator (SOI) substrates are crucial elements in nano-photonic integrated circuits. The strong light confinement in nanowires induced by high index contrast SOI material enhances the nonlinear effects in the silicon nanowire core...... such as four-wave mixing (FWM) which is an imperative process for optical signal processing. Since the current mature silicon fabrication technology enables a precise dimension control on nanowires, dispersion engineering can be performed by tailoring nanowire dimensions to realize an efficient nonlinear...

  16. Single n+-i-n+ InP nanowires for highly sensitive terahertz detection.

    Science.gov (United States)

    Peng, Kun; Parkinson, Patrick; Gao, Qian; Boland, Jessica L; Li, Ziyuan; Wang, Fan; Mokkapati, Sudha; Fu, Lan; Johnston, Michael B; Tan, Hark Hoe; Jagadish, Chennupati

    2017-03-24

    Developing single-nanowire terahertz (THz) electronics and employing them as sub-wavelength components for highly-integrated THz time-domain spectroscopy (THz-TDS) applications is a promising approach to achieve future low-cost, highly integrable and high-resolution THz tools, which are desirable in many areas spanning from security, industry, environmental monitoring and medical diagnostics to fundamental science. In this work, we present the design and growth of n + -i-n + InP nanowires. The axial doping profile of the n + -i-n + InP nanowires has been calibrated and characterized using combined optical and electrical approaches to achieve nanowire devices with low contact resistances, on which the highly-sensitive InP single-nanowire photoconductive THz detectors have been demonstrated. While the n + -i-n + InP nanowire detector has a only pA-level response current, it has a 2.5 times improved signal-to-noise ratio compared with the undoped InP nanowire detector and is comparable to traditional bulk THz detectors. This performance indicates a promising path to nanowire-based THz electronics for future commercial applications.

  17. TiO2-Anatase Nanowire Dispersed Composite Electrode for Dye-Sensitized Solar Cells

    International Nuclear Information System (INIS)

    Asagoe, K; Suzuki, Y; Ngamsinlapasathian, S; Yoshikawa, S

    2007-01-01

    TiO 2 anatase nanowires have been prepared by a hydrothermal process followed by post-heat treatment in air. TiO 2 nanoparticle/TiO 2 nanowire composite electrodes were prepared for dye-sensitized solar cells (DSC) in order to improve light-to-electricity conversion efficiency. The TiO 2 NP/TiO 2 NW composite cells showed higher DSC performance than ordinary nanoparticle cells and fully nanowire cells: efficiency (η = 6.53 % for DSC with 10% nanowire, whereas 5.59% for 0% nanowire, and 2.42% for 100% nanowire

  18. Field Emission of ITO-Coated Vertically Aligned Nanowire Array.

    KAUST Repository

    Lee, Changhwa

    2010-04-29

    An indium tin oxide (ITO)-coated vertically aligned nanowire array is fabricated, and the field emission characteristics of the nanowire array are investigated. An array of vertically aligned nanowires is considered an ideal structure for a field emitter because of its parallel orientation to the applied electric field. In this letter, a vertically aligned nanowire array is fabricated by modified conventional UV lithography and coated with 0.1-μm-thick ITO. The turn-on electric field intensity is about 2.0 V/μm, and the field enhancement factor, β, is approximately 3,078 when the gap for field emission is 0.6 μm, as measured with a nanomanipulator in a scanning electron microscope.

  19. Athermal avalanche in bilayer superconducting nanowire single-photon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Verma, V. B., E-mail: verma@nist.gov; Lita, A. E.; Stevens, M. J.; Mirin, R. P.; Nam, S. W. [National Institute of Standards and Technology, 325 Broadway, Boulder, Colorado 80305 (United States)

    2016-03-28

    We demonstrate that two superconducting nanowires separated by a thin insulating barrier can undergo an avalanche process. In this process, Joule heating caused by a photodetection event in one nanowire and the associated production of athermal phonons which are transmitted through the barrier cause the transition of the adjacent nanowire from the superconducting to the normal state. We show that this process can be utilized in the fabrication of superconducting nanowire single photon detectors to improve the signal-to-noise ratio, reduce system jitter, maximize device area, and increase the external efficiency over a very broad range of wavelengths. Furthermore, the avalanche mechanism may provide a path towards a superconducting logic element based on athermal gating.

  20. Field Emission of ITO-Coated Vertically Aligned Nanowire Array.

    KAUST Repository

    Lee, Changhwa; Lee, Seokwoo; Lee, Seung S

    2010-01-01

    An indium tin oxide (ITO)-coated vertically aligned nanowire array is fabricated, and the field emission characteristics of the nanowire array are investigated. An array of vertically aligned nanowires is considered an ideal structure for a field emitter because of its parallel orientation to the applied electric field. In this letter, a vertically aligned nanowire array is fabricated by modified conventional UV lithography and coated with 0.1-μm-thick ITO. The turn-on electric field intensity is about 2.0 V/μm, and the field enhancement factor, β, is approximately 3,078 when the gap for field emission is 0.6 μm, as measured with a nanomanipulator in a scanning electron microscope.

  1. Patchy silica-coated silver nanowires as SERS substrates

    International Nuclear Information System (INIS)

    Hunyadi Murph, Simona E.; Murphy, Catherine J.

    2013-01-01

    We report a class of core–shell nanomaterials that can be used as efficient surface-enhancement Raman scattering (SERS) substrates. The core consists of silver nanowires, prepared through a chemical reduction process, that are used to capture 4-mercaptobenzoic acid (4-MBA), a model analyte. The shell was prepared through a modified Stöber method and consists of patchy or full silica coats. The formation of silica coats was monitored via transmission electron microscopy, UV–visible spectroscopy, and phase-analysis light-scattering for measuring effective surface charge. Surprisingly, the patchy silica-coated silver nanowires are better SERS substrate than silver nanowires; nanomolar concentration of 4-MBA can be detected. In addition, “nano-matryoshka” configurations were used to quantitate/explore the effect of the electromagnetic field at the tips of the nanowire (“hot spots”) in the Raman scattering experiment.

  2. Silicon nanowire networks for multi-stage thermoelectric modules

    International Nuclear Information System (INIS)

    Norris, Kate J.; Garrett, Matthew P.; Zhang, Junce; Coleman, Elane; Tompa, Gary S.; Kobayashi, Nobuhiko P.

    2015-01-01

    Highlights: • Fabricated flexible single, double, and quadruple stacked Si thermoelectric modules. • Measured an enhanced power production of 27%, showing vertical stacking is scalable. • Vertically scalable thermoelectric module design of semiconducting nanowires. • Design can utilize either p or n-type semiconductors, both types are not required. • ΔT increases with thickness therefore power/area can increase as modules are stacked. - Abstract: We present the fabrication and characterization of single, double, and quadruple stacked flexible silicon nanowire network based thermoelectric modules. From double to quadruple stacked modules, power production increased 27%, demonstrating that stacking multiple nanowire thermoelectric devices in series is a scalable method to generate power by supplying larger temperature gradient. We present a vertically scalable multi-stage thermoelectric module design using semiconducting nanowires, eliminating the need for both n-type and p-type semiconductors for modules

  3. Reactive diffusion and stresses in nanowires or nanorods

    International Nuclear Information System (INIS)

    Roussel, Manuel; Erdélyi, Zoltán; Schmitz, Guido

    2017-01-01

    Heterostructured nanowires are of prime interest in nowadays technology such as field-effect transistors, field emitters, batteries and solar cells. We consider their aging behavior and developed a model focusing on reactive diffusion in core-shell nanowires. A complete set of analytical equations is presented that takes into account thermodynamic driving forces, vacancy distribution, elastic stress and its plastic relaxation. This complete description of the reactive diffusion can be used in finite element simulations to investigate diffusion processes in various geometries. In order to show clearly the interplay between the cylindrical geometry, the reactive diffusion and the stresses developing in the nanowire, we investigate the formation of an intermetallic reaction product in various core-shell geometries. Emphasis is placed on showing how it is possible to control the kinetics of the reaction by applying an axial stress to the nanowires.

  4. Patchy silica-coated silver nanowires as SERS substrates

    Energy Technology Data Exchange (ETDEWEB)

    Hunyadi Murph, Simona E.; Murphy, Catherine J.

    2013-05-08

    We report a class of core-shell nanomaterials that can be used as efficient surface-enhancement Raman scattering (SERS) substrates. The core consists of silver nanowires, prepared through a chemical reduction process, that are used to capture 4- mercaptobenzoic acid (4-MBA), a model analyte. The shell was prepared through a modified Stöber method and consists of patchy or full silica coats. The formation of silica coats was monitored via transmission electron microscopy, UV-visible spectroscopy and phase-analysis light scattering for measuring effective surface charge. Surprisingly, the patchy silica coated silver nanowires are better SERS substrate than silver nanowires; nanomolar concentration of 4-MBA can be detected. In addition, “nano-matryoshka” configurations were used to quantitate/explore the effect of the electromagnetic field at the tips of the nanowire (“hot spots”) in the Raman scattering experiment.

  5. Insights into pulsed electrodeposition of GMR multilayered nanowires

    International Nuclear Information System (INIS)

    Pullini, D.; Busquets, D.; Ruotolo, A.; Innocenti, G.; Amigo, V.

    2007-01-01

    In this work, Co/Cu nanowires are fabricated by pulsed electrodeposition from a single bath solution containing both Co and Cu ions. Alternate Co and Cu layers are deposited into the nanopores of track etched polycarbonate templates. Although the feasibility of this process is generally recognized, some important issues such as process reproducibility and how structural defects affect the nanowires arrays' sensing performances are still open; conditions necessary to turn a this made system into a magnetic field sensor. The present work aims at pushing forward knowledge concerning the nanowires fabrication and defining the best growth parameters; in particular, a tight control of the growth process parameters such as single metal deposition potentials and single cycle deposition durations have been carried out for nanowires of 80 nm diameter and correlated to the system magneto-electric response

  6. Location deterministic biosensing from quantum-dot-nanowire assemblies

    International Nuclear Information System (INIS)

    Liu, Chao; Kim, Kwanoh; Fan, D. L.

    2014-01-01

    Semiconductor quantum dots (QDs) with high fluorescent brightness, stability, and tunable sizes, have received considerable interest for imaging, sensing, and delivery of biomolecules. In this research, we demonstrate location deterministic biochemical detection from arrays of QD-nanowire hybrid assemblies. QDs with diameters less than 10 nm are manipulated and precisely positioned on the tips of the assembled Gold (Au) nanowires. The manipulation mechanisms are quantitatively understood as the synergetic effects of dielectrophoretic (DEP) and alternating current electroosmosis (ACEO) due to AC electric fields. The QD-nanowire hybrid sensors operate uniquely by concentrating bioanalytes to QDs on the tips of nanowires before detection, offering much enhanced efficiency and sensitivity, in addition to the position-predictable rationality. This research could result in advances in QD-based biomedical detection and inspires an innovative approach for fabricating various QD-based nanodevices.

  7. Three-dimensional electrodes for dye-sensitized solar cells: synthesis of indium-tin-oxide nanowire arrays and ITO/TiO2 core-shell nanowire arrays by electrophoretic deposition

    International Nuclear Information System (INIS)

    Wang, H-W; Ting, C-F; Hung, M-K; Chiou, C-H; Liu, Y-L; Liu Zongwen; Ratinac, Kyle R; Ringer, Simon P

    2009-01-01

    Dye-sensitized solar cells (DSSCs) show promise as a cheaper alternative to silicon-based photovoltaics for specialized applications, provided conversion efficiency can be maximized and production costs minimized. This study demonstrates that arrays of nanowires can be formed by wet-chemical methods for use as three-dimensional (3D) electrodes in DSSCs, thereby improving photoelectric conversion efficiency. Two approaches were employed to create the arrays of ITO (indium-tin-oxide) nanowires or arrays of ITO/TiO 2 core-shell nanowires; both methods were based on electrophoretic deposition (EPD) within a polycarbonate template. The 3D electrodes for solar cells were constructed by using a doctor-blade for coating TiO 2 layers onto the ITO or ITO/TiO 2 nanowire arrays. A photoelectric conversion efficiency as high as 4.3% was achieved in the DSSCs made from ITO nanowires; this performance was better than that of ITO/TiO 2 core-shell nanowires or pristine TiO 2 films. Cyclic voltammetry confirmed that the reaction current was significantly enhanced when a 3D ITO-nanowire electrode was used. Better separation of charge carriers and improved charge transport, due to the enlarged interfacial area, are thought to be the major advantages of using 3D nanowire electrodes for the optimization of DSSCs.

  8. Looking into meta-atoms of plasmonic nanowire metamaterial

    KAUST Repository

    Tsai, Kuntong

    2014-09-10

    Nanowire-based plasmonic metamaterials exhibit many intriguing properties related to the hyperbolic dispersion, negative refraction, epsilon-near-zero behavior, strong Purcell effect, and nonlinearities. We have experimentally and numerically studied the electromagnetic modes of individual nanowires (meta-atoms) forming the metamaterial. High-resolution, scattering-type near-field optical microscopy has been used to visualize the intensity and phase of the modes. Numerical and analytical modeling of the mode structure is in agreement with the experimental observations and indicates the presence of the nonlocal response associated with cylindrical surface plasmons of nanowires.

  9. Great expectations - Epigenetics and the meandering path from bench to bedside

    DEFF Research Database (Denmark)

    Häfner, Sophia J; Lund, Anders H

    2016-01-01

    Making quick promises of major biomedical breakthroughs based on exciting discoveries at the bench is tempting. But the meandering path from fundamental science to life-saving clinical applications can be fraught with many hurdles. Epigenetics, the study of potentially heritable changes of gene...... function without modification of the underlying DNA sequence, has dominated the biological research field during the last decade and encountered a large public success. Driven by the unfolding of molecular biology and recent technological progress, the term has evolved significantly and shifted from....... However, while exciting reports of biological phenomena involving DNA methylation and histone modifications fill up the scientific literature, the realistic clinical applications of epigenetic medicines remain somewhat blurry. Here, we discuss the state of the art and speculate how epigenetics might...

  10. In situ-growth of silica nanowires in ceramic carbon composites

    Directory of Open Access Journals (Sweden)

    Rahul Kumar

    2017-09-01

    Full Text Available An understanding of the processing and microstructure of ceramic–carbon composites is critical to development of these composites for applications needing electrically conducting, thermal shock resistant ceramic materials. In the present study green compacts of carbon ceramic composites were prepared either by slurry processing or dry powder blending of one or more of the three — clay, glass, alumina and carbon black or graphite. The dried green compacts were sintered at 1400 °C in flowing argon. The ceramic carbon composites except the ones without clay addition showed formation of silica nanowires. The silica nanowire formation was observed in both samples prepared by slip casting and dry powder compaction containing either carbon black or graphite. TEM micrographs showed presence of carbon at the core of the silica nanowires indicating that carbon served the role of a catalyst. Selected area electron diffraction (SAED suggested that the silica nanowires are amorphous. Prior studies have reported formation of silica nanowires from silicon, silica, silicon carbide but this is the first report ever on formation of silica nanowires from clay.

  11. Synthesis, characterization and photoluminescence of tin oxide nanoribbons and nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Duraia, El-Shazly M.A., E-mail: duraia_physics@yahoo.co [Suez Canal University, Faculty of Science, Physics Department, Ismailia (Egypt); Al-Farabi Kazakh National University, Almaty (Kazakhstan); Institute of Physics and Technology, 11 Ibragimov Street, 050032 Almaty (Kazakhstan); Mansorov, Z.A. [Al-Farabi Kazakh National University, Almaty (Kazakhstan); Tokmolden, S. [Institute of Physics and Technology, 11 Ibragimov Street, 050032 Almaty (Kazakhstan)

    2009-11-15

    In this work we report the successful formation of tin oxide nanowires and tin oxide nanoribbons with high yield and by using simple cheap method. We also report the formation of curved nanoribbon, wedge-like tin oxide nanowires and star-like nanowires. The growth mechanism of these structures has been studied. Scanning electron microscope was used in the analysis and the EDX analysis showed that our samples is purely Sn and O with ratio 1:2. X-ray analysis was also used in the characterization of the tin oxide nanowire and showed the high crystallinity of our nanowires. The mechanism of the growth of our1D nanostructures is closely related to the vapor-liquid-solid (VLS) process. The photoluminescence PL measurements for the tin oxide nanowires indicated that there are three stable emission peaks centered at wavelengths 630, 565 and 395 nm. The nature of the transition may be attributed to nanocrystals inside the nanobelts or to Sn or O vacancies occurring during the growth which can induce trapped states in the band gap.

  12. Magnetoimpedance effects in a CoNiFe nanowire array

    Energy Technology Data Exchange (ETDEWEB)

    Atalay, S., E-mail: selcuk.atalay@inonu.edu.tr [Inonu University, Science and Arts Faculty, Physics Department, Malatya (Turkey); Kaya, H.; Atalay, F.E.; Aydogmus, E. [Inonu University, Science and Arts Faculty, Physics Department, Malatya (Turkey)

    2013-06-05

    Highlights: ► CoNiFe nanowires were produced by electrodeposition method. ► Magnetoimpedance effect of nanowires arrays were investigated. ► Single peak behaviour was observed in the magnetoimpedance curve. ► Nanowire arrays exhibit uniaxial magnetic anisotropy along the wire axis. -- Abstract: This report describes the growth of CoNiFe nanowires into highly ordered porous anodic alumina oxide (AAO) templates by DC electrodeposition at a pH value of 2.6. Scanning electron microscopy (SEM) observations revealed that the wires have diameters of approximately 270–290 nm and a length of 25 μm. The energy dispersive X-ray (EDX) analysis indicated that the composition of the nanowires is Co{sub 12}Ni{sub 64}Fe{sub 24}. Electrical contacts were created on both sides of the nanowire array, and their magnetoimpedance (MI) properties were investigated. The impedance value was initially 1.2 ohm at low frequency and increased to approximately 1000 ohm for a 33-MHz driving current frequency under no applied magnetic field. All the MI curves exhibited single peak behaviour due to the high shape anisotropy. The maximum MI change at the 33-MHz driving current frequency was 2.72%. The maximum resistance change was 5.4% at 33 MHz.

  13. Growth and applicability of radiation-responsive silica nanowires

    Science.gov (United States)

    Bettge, Martin

    Surface energetics play an important role in processes on the nanoscale. Nanowire growth via vapor-liquid-solid (VLS) mechanism is no exception in this regard. Interfacial and line energies are found to impose some fundamental limits during three-phase nanowire growth and lead to formation of stranded nanowires with fascinating characteristics such as high responsiveness towards ion irradiation. By using two materials with a relatively low surface energy (indium and silicon oxide) this is experimentally and theoretically demonstrated in this doctoral thesis. The augmentation of VLS nanowire growth with ion bombardment enables fabrication of vertically aligned silica nanowires over large areas. Synthesis of their arrays begins with a thin indium film deposited on a Si or SiO 2 surface. At temperatures below 200ºC, the indium film becomes a self-organized seed layer of molten droplets, receiving a flux of atomic silicon by DC magnetron sputtering. Simultaneous vigorous ion bombardment through substrate biasing aligns the growing nanowires vertically and expedites mixing of oxygen and silicon into the indium. The vertical growth rate can reach up to 1000 nm-min-1 in an environment containing only argon and traces of water vapor. Silicon oxide precipitates from each indium seed in the form of multiple thin strands having diameters less than 9 nm and practically independent of droplet size. The strands form a single loose bundle, eventually consolidating to form one vertically aligned nanowire. These observations are in stark contrast to conventional VLS growth in which one liquid droplet precipitates a single solid nanowire and in which the precipitated wire diameter is directly proportional to the droplet diameter. The origin of these differences is revealed through a detailed force balance analysis, analogous to Young's relation, at the three-phase line. The liquid-solid interfacial energy of indium/silica is found to be the largest energy contribution at the three

  14. Cell membrane conformation at vertical nanowire array interface revealed by fluorescence imaging

    International Nuclear Information System (INIS)

    Berthing, Trine; Bonde, Sara; Rostgaard, Katrine R; Martinez, Karen L; Madsen, Morten Hannibal; Sørensen, Claus B; Nygård, Jesper

    2012-01-01

    The perspectives offered by vertical arrays of nanowires for biosensing applications in living cells depend on the access of individual nanowires to the cell interior. Recent results on electrical access and molecular delivery suggest that direct access is not always obtained. Here, we present a generic approach to directly visualize the membrane conformation of living cells interfaced with nanowire arrays, with single nanowire resolution. The method combines confocal z-stack imaging with an optimized cell membrane labelling strategy which was applied to HEK293 cells interfaced with 2–11 μm long and 3–7 μm spaced nanowires with various surface coatings (bare, aminosilane-coated or polyethyleneimine-coated indium arsenide). We demonstrate that, for all commonly used nanowire lengths, spacings and surface coatings, nanowires generally remain enclosed in a membrane compartment, and are thereby not in direct contact with the cell interior. (paper)

  15. Nanotubes and nanowires

    Indian Academy of Sciences (India)

    Unknown

    junction nanotubes by the pyrolysis of appropriate organic precursors. ... By making use of carbon nanotubes, nanowires of metals, metal ..... The use of activated carbon in place of ..... required for the complete removal of the carbon template.

  16. UV irradiation assisted growth of ZnO nanowires on optical fiber surface

    Energy Technology Data Exchange (ETDEWEB)

    Gong, Bo; Shi, Tielin; Liao, Guanglan; Li, Xiaoping; Huang, Jie; Zhou, Temgyuan; Tang, Zirong, E-mail: zirong@mail.hust.edu.cn

    2017-06-01

    Highlights: • A new fabrication process combined a hydrothermal process with UV irradiation from optical fiber is developed. • The growth of ZnO nanowires is efficient in the utilization of UV light. • A novel hybrid structure which integrates ZnO nanowires on optical fiber surface is synthesized. • The UV assisted growth of ZnO nanowires shows preferred orientation and better quality. • A mechanism of growing ZnO nanowires under UV irradiation is proposed. - Abstract: In this paper, a novel approach was developed for the enhanced growth of ZnO nanowires on optical fiber surface. The method combined a hydrothermal process with the efficient UV irradiation from the fiber core, and the effects of UV irradiation on the growth behavior of ZnO nanowires were investigated. The results show that UV irradiation had great effects on the preferred growth orientation and the quality of the ZnO nanowires. The crystallization velocity along the c-axis would increase rapidly with the increase of the irradiation power, while the growth process in the lateral direction was marginally affected by the irradiation. The structure of ZnO nanowires also shows less oxygen vacancy with UV irradiation of higher power. The developed approach is applicable for the efficient growth of nanowires on the fiber surface, and the ZnO nanowires/optical fiber hybrid structures have great potentials for a wide variety of applications such as optical fiber sensors and probes.

  17. Electron emission from individual indium arsenide semiconductor nanowires

    NARCIS (Netherlands)

    Heeres, E.C.; Bakkers, E.P.A.M.; Roest, A.L.; Kaiser, M.A.; Oosterkamp, T.H.; Jonge, de N.

    2007-01-01

    A procedure was developed to mount individual semiconductor indium arsenide nanowires onto tungsten support tips to serve as electron field-emission sources. The electron emission properties of the single nanowires were precisely determined by measuring the emission pattern, current-voltage curve,

  18. A deep etching mechanism for trench-bridging silicon nanowires.

    Science.gov (United States)

    Tasdemir, Zuhal; Wollschläger, Nicole; Österle, Werner; Leblebici, Yusuf; Alaca, B Erdem

    2016-03-04

    Introducing a single silicon nanowire with a known orientation and dimensions to a specific layout location constitutes a major challenge. The challenge becomes even more formidable, if one chooses to realize the task in a monolithic fashion with an extreme topography, a characteristic of microsystems. The need for such a monolithic integration is fueled by the recent surge in the use of silicon nanowires as functional building blocks in various electromechanical and optoelectronic applications. This challenge is addressed in this work by introducing a top-down, silicon-on-insulator technology. The technology provides a pathway for obtaining well-controlled silicon nanowires along with the surrounding microscale features up to a three-order-of-magnitude scale difference. A two-step etching process is developed, where the first shallow etch defines a nanoscale protrusion on the wafer surface. After applying a conformal protection on the protrusion, a deep etch step is carried out forming the surrounding microscale features. A minimum nanowire cross-section of 35 nm by 168 nm is demonstrated in the presence of an etch depth of 10 μm. Nanowire cross-sectional features are characterized via transmission electron microscopy and linked to specific process steps. The technology allows control on all dimensional aspects along with the exact location and orientation of the silicon nanowire. The adoption of the technology in the fabrication of micro and nanosystems can potentially lead to a significant reduction in process complexity by facilitating direct access to the nanowire during surface processes such as contact formation and doping.

  19. A deep etching mechanism for trench-bridging silicon nanowires

    International Nuclear Information System (INIS)

    Tasdemir, Zuhal; Alaca, B Erdem; Wollschläger, Nicole; Österle, Werner; Leblebici, Yusuf

    2016-01-01

    Introducing a single silicon nanowire with a known orientation and dimensions to a specific layout location constitutes a major challenge. The challenge becomes even more formidable, if one chooses to realize the task in a monolithic fashion with an extreme topography, a characteristic of microsystems. The need for such a monolithic integration is fueled by the recent surge in the use of silicon nanowires as functional building blocks in various electromechanical and optoelectronic applications. This challenge is addressed in this work by introducing a top-down, silicon-on-insulator technology. The technology provides a pathway for obtaining well-controlled silicon nanowires along with the surrounding microscale features up to a three-order-of-magnitude scale difference. A two-step etching process is developed, where the first shallow etch defines a nanoscale protrusion on the wafer surface. After applying a conformal protection on the protrusion, a deep etch step is carried out forming the surrounding microscale features. A minimum nanowire cross-section of 35 nm by 168 nm is demonstrated in the presence of an etch depth of 10 μm. Nanowire cross-sectional features are characterized via transmission electron microscopy and linked to specific process steps. The technology allows control on all dimensional aspects along with the exact location and orientation of the silicon nanowire. The adoption of the technology in the fabrication of micro and nanosystems can potentially lead to a significant reduction in process complexity by facilitating direct access to the nanowire during surface processes such as contact formation and doping. (paper)

  20. A deep etching mechanism for trench-bridging silicon nanowires

    Science.gov (United States)

    Tasdemir, Zuhal; Wollschläger, Nicole; Österle, Werner; Leblebici, Yusuf; Erdem Alaca, B.

    2016-03-01

    Introducing a single silicon nanowire with a known orientation and dimensions to a specific layout location constitutes a major challenge. The challenge becomes even more formidable, if one chooses to realize the task in a monolithic fashion with an extreme topography, a characteristic of microsystems. The need for such a monolithic integration is fueled by the recent surge in the use of silicon nanowires as functional building blocks in various electromechanical and optoelectronic applications. This challenge is addressed in this work by introducing a top-down, silicon-on-insulator technology. The technology provides a pathway for obtaining well-controlled silicon nanowires along with the surrounding microscale features up to a three-order-of-magnitude scale difference. A two-step etching process is developed, where the first shallow etch defines a nanoscale protrusion on the wafer surface. After applying a conformal protection on the protrusion, a deep etch step is carried out forming the surrounding microscale features. A minimum nanowire cross-section of 35 nm by 168 nm is demonstrated in the presence of an etch depth of 10 μm. Nanowire cross-sectional features are characterized via transmission electron microscopy and linked to specific process steps. The technology allows control on all dimensional aspects along with the exact location and orientation of the silicon nanowire. The adoption of the technology in the fabrication of micro and nanosystems can potentially lead to a significant reduction in process complexity by facilitating direct access to the nanowire during surface processes such as contact formation and doping.