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Sample records for nanowires form exclusively

  1. Magnetic Iron Oxide Nanowires Formed by Reactive Dewetting.

    Bennett, Roger A; Etman, Haitham A; Hicks, Hannah; Richards, Leah; Wu, Chen; Castell, Martin R; Dhesi, Sarnjeet S; Maccherozzi, Francesco

    2018-04-11

    The growth and reactive dewetting of ultrathin films of iron oxides supported on Re(0001) surfaces have been imaged in situ in real time. Initial growth forms a nonmagnetic stable FeO (wüstite like) layer in a commensurate network upon which high aspect ratio nanowires of several microns in length but less than 40 nm in width can be fabricated. The nanowires are closely aligned with the substrate crystallography and imaging by X-ray magnetic circular dichroism shows that each contain a single magnetic domain. The driving force for dewetting appears to be the minimization of strain energy of the Fe 3 O 4 crystallites and follows the Tersoff and Tromp model in which strain is minimized at constant height by extending in one epitaxially matched direction. Such wires are promising in spintronic applications and we predict that the growth will also occur on other hexagonal substrates.

  2. Electrical properties of fluorine-doped ZnO nanowires formed by biased plasma treatment

    Wang, Ying; Chen, Yicong; Song, Xiaomeng; Zhang, Zhipeng; She, Juncong; Deng, Shaozhi; Xu, Ningsheng; Chen, Jun

    2018-05-01

    Doping is an effective method for tuning electrical properties of zinc oxide nanowires, which are used in nanoelectronic devices. Here, ZnO nanowires were prepared by a thermal oxidation method. Fluorine doping was achieved by a biased plasma treatment, with bias voltages of 100, 200, and 300 V. Transmission electron microscopy indicated that the nanowires treated at bias voltages of 100 and 200 V featured low crystallinity. When the bias voltage was 300 V, the nanowires showed single crystalline structures. Photoluminescence measurements revealed that concentrations of oxygen and surface defects decreased at high bias voltage. X-ray photoelectron spectroscopy suggested that the F content increased as the bias voltage was increased. The conductivity of the as-grown nanowires was less than 103 S/m; the conductivity of the treated nanowires ranged from 1 × 104-5 × 104, 1 × 104-1 × 105, and 1 × 103-2 × 104 S/m for bias voltage treatments at 100, 200, and 300 V, respectively. The conductivity improvements of nanowires formed at bias voltages of 100 and 200 V, were attributed to F-doping, defects and surface states. The conductivity of nanowires treated at 300 V was attributed to the presence of F ions. Thus, we provide a method of improving electrical properties of ZnO nanowires without altering their crystal structure.

  3. Meson Form Factors and Deep Exclusive Meson Production Experiments

    Horn, Tanja [The Catholic Univ. of America, Washington, DC (United States); Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)

    2017-05-01

    Pion and kaon electroproduction data play a unique role in Nature and our understanding of them is essential for explaining hadron structure. Precision longitudinaltransverse separated pion and kaon cross sections are of particular interest. They allow for the extraction of meson form factors and validation of understanding of hard exclusive and semi-inclusive reactions (π+, K+, π0, γ) towards 3D hadron imaging and potential future flavor decomposition. We review recent data and present prospects for deep exclusive pion and kaon electroproduction at the 12 GeV Jefferson Lab including the prospects to use projected charged- and neutral pion data to further determine the spin, charge-parity and flavor of GPDs, including the helicity-flip GPDs.

  4. Superconducting nanowire networks formed on nanoporous membrane substrates

    Luo, Qiong

    Introducing a regular array of holes into superconducting thin films has been actively pursued to stabilize and pin the vortex lattice against external driving forces, enabling higher current capabilities. If the width of the sections between neighboring holes is comparable to the superconducting coherence length, the circulation of the Cooper pairs in around the holes in the presence of a magnetic field can also produce the Little-Parks effect, i.e. periodic oscillation of the critical temperature. These two mechanisms, commensurate vortex pinning enhancement by the hole-array and the critical temperature oscillations of a wire network due to Little-Parks effect can induce similar experimental observations such as magnetoresistance oscillation and enhancement of the critical current at specific magnetic fields. This dissertation work investigates the effect of a hole-array on the properties of superconducting films deposited onto nanoporous substrates. Experiments on anisotropies of the critical temperature for niobium films on anodic aluminum oxide membrane substrates containing a regular hole-array reveal that the critical temperature exhibits two strong anisotropic effects: Little-Parks oscillations whose period varies with field direction superimposed on a smooth background arising from one dimensional confinement by the finite lateral space between neighboring holes. The two components of the anisotropy are intrinsically linked and appear in concert. That is, the hole-array changes the dimensionality of a two-dimensional (2D) film to a network of 1D nanowire network. Network of superconducting nanowires with transverse dimensions as small as few nanometers were achieved by coating molybdenum germanium (MoGe) layer onto commercially available filtration membranes which have extremely dense nanopores. The magnetoresistance, magnetic field dependence of the critical temperature and the anisotropies of the synthesized MoGe nanowire networks can be consistently

  5. The Electrostatically Formed Nanowire: A Novel Platform for Gas-Sensing Applications

    Gil Shalev

    2017-02-01

    Full Text Available The electrostatically formed nanowire (EFN gas sensor is based on a multiple-gate field-effect transistor with a conducting nanowire, which is not defined physically; rather, the nanowire is defined electrostatically post-fabrication, by using appropriate biasing of the different surrounding gates. The EFN is fabricated by using standard silicon processing technologies with relaxed design rules and, thereby, supports the realization of a low-cost and robust gas sensor, suitable for mass production. Although the smallest lithographic definition is higher than half a micrometer, appropriate tuning of the biasing of the gates concludes a conducting channel with a tunable diameter, which can transform the conducting channel into a nanowire with a diameter smaller than 20 nm. The tunable size and shape of the nanowire elicits tunable sensing parameters, such as sensitivity, limit of detection, and dynamic range, such that a single EFN gas sensor can perform with high sensitivity and a broad dynamic range by merely changing the biasing configuration. The current work reviews the design of the EFN gas sensor, its fabrication considerations and process flow, means of electrical characterization, and preliminary sensing performance at room temperature, underlying the unique and advantageous tunable capability of the device.

  6. Facile Conversion Synthesis of Densely-Formed Branched ZnO-Nanowire Arrays for Quantum-Dot-Sensitized Solar Cells

    Lee, Woojin; Kang, Suji; Hwang, Taehyun; Kim, Kunsu; Woo, Hyungsub; Lee, Byungho; Kim, Jaewon; Kim, Jinhyun; Park, Byungwoo

    2015-01-01

    Highlights: •3-D hierarchically branched ZnO nanowires by a facile synthesis with seed nucleation. •Nanobranching enhances the efficiency by a factor of two compared with the bare QDSC. •Attributed to the increased sensitizer by ∼80% and decreased transmittance by ∼17%. •Optimized nanostructures correlate with the light-harvesting and carrier-collection efficiencies. -- Abstract: An effective way of synthesizing densely-formed branched ZnO-nanowire arrays was developed by a straightforward conversion reaction of ZnS into ZnO. Hierarchically structured ZnO nanowires are utilized for quantum-dot-sensitized solar cells (QDSCs), having resulted in the conversion-efficiency enhancement by a factor of two compared to the bare ZnO nanowires. This is attributed to the increased CdS-quantum-dot sensitizer by ∼80% and decreased diffused transmittance by ∼17%, induced by the densely-formed branched nanowires. The correlations between the branched nanostructures and photovoltaic performances are systematically investigated in terms of light absorption, charge-transfer resistance, and carrier lifetime. This facile and controllable branched nanowire synthesis is anticipated to be applicable to other semiconductor photoanodes for efficient light harvesting and charge collecting properties

  7. Social Exclusion Based on Group Membership is a Form of Prejudice.

    Cooley, Shelby; Elenbaas, Laura; Killen, Melanie

    Children around the world are affected by bias, prejudice, and discrimination. In this chapter, we argue that intergroup social exclusion-exclusion of peers on the basis of group membership-is a form of prejudice. As such, research efforts should be directed at uncovering the negative intergroup attitudes that sustain these behaviors, and encouraging the development of children's capacity to resist biases in favor of inclusion and just treatment of others. In order to interpret what is known about intergroup social exclusion in childhood, as well as identify compelling issues for current investigation, we introduce our integrative social reasoning developmental model, which emphasizes how children weigh moral and social concerns in everyday peer contexts. This chapter emphasizes three areas of research that have contributed to understanding social inclusion and exclusion decisions in childhood which include the roles of: (1) intergroup contact and friendship, (2) peer group norms, and (3) messages from parents and teachers. While providing a background on the state of research to date, this chapter also pinpoints recent work, shedding new light on the complex interplay of moral reasoning and intergroup attitudes in children's inclusion and exclusion decisions. © 2016 Elsevier Inc. All rights reserved.

  8. CdS nanowires formed by chemical synthesis using conjugated single-stranded DNA molecules

    Sarangi, S. N.; Sahu, S. N.; Nozaki, S.

    2018-03-01

    CdS nanowires were successfully grown by chemical synthesis using two conjugated single-stranded (ss) DNA molecules, poly G (30) and poly C (30), as templates. During the early stage of the synthesis with the DNA molecules, the Cd 2+ interacts with Poly G and Poly C and produces the (Cd 2+)-Poly GC complex. As the growth proceeds, it results in nanowires. The structural analysis by grazing angle x-ray diffraction and transmission electron microscopy confirmed the zinc-blende CdS nanowires with the growth direction of . Although the nanowires are well surface-passivated with the DNA molecules, the photoluminescence quenching was caused by the electron transfer from the nanowires to the DNA molecules. The quenching can be used to detect and label the DNAs.

  9. Numerical Modeling of the Photothermal Processing for Bubble Forming around Nanowire in a Liquid

    Anis Chaari

    2014-01-01

    Full Text Available An accurate computation of the temperature is an important factor in determining the shape of a bubble around a nanowire immersed in a liquid. The study of the physical phenomenon consists in solving a photothermic coupled problem between light and nanowire. The numerical multiphysic model is used to study the variations of the temperature and the shape of the created bubble by illumination of the nanowire. The optimization process, including an adaptive remeshing scheme, is used to solve the problem through a finite element method. The study of the shape evolution of the bubble is made taking into account the physical and geometrical parameters of the nanowire. The relation between the sizes and shapes of the bubble and nanowire is deduced.

  10. Numerical Modeling of the Photothermal Processing for Bubble Forming around Nanowire in a Liquid

    Chaari, Anis; Giraud-Moreau, Laurence

    2014-01-01

    An accurate computation of the temperature is an important factor in determining the shape of a bubble around a nanowire immersed in a liquid. The study of the physical phenomenon consists in solving a photothermic coupled problem between light and nanowire. The numerical multiphysic model is used to study the variations of the temperature and the shape of the created bubble by illumination of the nanowire. The optimization process, including an adaptive remeshing scheme, is used to solve the problem through a finite element method. The study of the shape evolution of the bubble is made taking into account the physical and geometrical parameters of the nanowire. The relation between the sizes and shapes of the bubble and nanowire is deduced. PMID:24795538

  11. The design and fabrication of supramolecular semiconductor nanowires formed by benzothienobenzothiophene (BTBT)-conjugated peptides.

    Khalily, Mohammad Aref; Usta, Hakan; Ozdemir, Mehmet; Bakan, Gokhan; Dikecoglu, F Begum; Edwards-Gayle, Charlotte; Hutchinson, Jessica A; Hamley, Ian W; Dana, Aykutlu; Guler, Mustafa O

    2018-05-18

    π-Conjugated small molecules based on a [1]benzothieno[3,2-b]benzothiophene (BTBT) unit are of great research interest in the development of solution-processable semiconducting materials owing to their excellent charge-transport characteristics. However, the BTBT π-core has yet to be demonstrated in the form of electro-active one-dimensional (1D) nanowires that are self-assembled in aqueous media for potential use in bioelectronics and tissue engineering. Here we report the design, synthesis, and self-assembly of benzothienobenzothiophene (BTBT)-peptide conjugates, the BTBT-peptide (BTBT-C3-COHN-Ahx-VVAGKK-Am) and the C8-BTBT-peptide (C8-BTBT-C3-COHN-Ahx-VVAGKK-Am), as β-sheet forming amphiphilic molecules, which self-assemble into highly uniform nanofibers in water with diameters of 11-13(±1) nm and micron-size lengths. Spectroscopic characterization studies demonstrate the J-type π-π interactions among the BTBT molecules within the hydrophobic core of the self-assembled nanofibers yielding an electrical conductivity as high as 6.0 × 10-6 S cm-1. The BTBT π-core is demonstrated, for the first time, in the formation of self-assembled peptide 1D nanostructures in aqueous media for potential use in tissue engineering, bioelectronics and (opto)electronics. The conductivity achieved here is one of the highest reported to date in a non-doped state.

  12. Time-dependent optical response of three-dimensional Au nanoparticle arrays formed on silica nanowires

    Di Mario, Lorenzo; Otomalo, Tadele Orbula; Catone, Daniele; O'Keeffe, Patrick; Tian, Lin; Turchini, Stefano; Palpant, Bruno; Martelli, Faustino

    2018-03-01

    We present stationary and transient absorption measurements on 3D Au nanoparticle (NP)-decorated Si O2 nanowire arrays. The 3D NP array has been produced by the dewetting of a thin Au film deposited on silica nanowires produced by oxidation of silicon nanowires. The experimental behaviors of the spectral and temporal dynamics observed in the experiment are accurately described by a two-step, three-temperature model. Using an arbitrary set of Au NPs with different aspect ratios, we demonstrate that the width of the experimental spectra, the energy shift of their position with time, and the asymmetry between the two positive wings in the dynamical variation of absorption can all be attributed to the nonuniform shape distribution of the Au NPs in the sample.

  13. Thermal stability of titanate nanorods and titania nanowires formed from titanate nanotubes by heating

    Brunátová, T.; Matěj, Z.; Oleynikov, P.; Vesely, J.; Danis, S.; Popelková, Daniela; Kuzel, R.

    2014-01-01

    Roč. 98, December (2014), s. 26-36 ISSN 1044-5803 Institutional support: RVO:61389013 Keywords : titania nanowires * titanate nanorods * X-ray diffraction Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.845, year: 2014

  14. Fabrication of multilayer nanowires

    Kaur, Jasveer, E-mail: kaurjasveer89@gmail.com; Singh, Avtar; Kumar, Davinder [Department of Physics, Punjabi University Patiala, 147002, Punjab (India); Thakur, Anup; Kaur, Raminder, E-mail: raminder-k-saini@yahoo.com [Department of Basic and Applied Sciences, Punjabi University Patiala, 147002, Punjab (India)

    2016-05-06

    Multilayer nanowires were fabricated by potentiostate ectrodeposition template synthesis method into the pores of polycarbonate membrane. In present work layer by layer deposition of two different metals Ni and Cu in polycarbonate membrane having pore size of 600 nm were carried out. It is found that the growth of nanowires is not constant, it varies with deposition time. Scanning electron microscopy (SEM) is used to study the morphology of fabricated multilayer nanowires. An energy dispersive X-ray spectroscopy (EDS) results confirm the composition of multilayer nanowires. The result shows that multilayer nanowires formed is dense.

  15. Fabrication of multilayer nanowires

    Kaur, Jasveer; Singh, Avtar; Kumar, Davinder; Thakur, Anup; Kaur, Raminder

    2016-01-01

    Multilayer nanowires were fabricated by potentiostate ectrodeposition template synthesis method into the pores of polycarbonate membrane. In present work layer by layer deposition of two different metals Ni and Cu in polycarbonate membrane having pore size of 600 nm were carried out. It is found that the growth of nanowires is not constant, it varies with deposition time. Scanning electron microscopy (SEM) is used to study the morphology of fabricated multilayer nanowires. An energy dispersive X-ray spectroscopy (EDS) results confirm the composition of multilayer nanowires. The result shows that multilayer nanowires formed is dense.

  16. A novel vector-based method for exclusive overexpression of star-form microRNAs.

    Bo Qu

    Full Text Available The roles of microRNAs (miRNAs as important regulators of gene expression have been studied intensively. Although most of these investigations have involved the highly expressed form of the two mature miRNA species, increasing evidence points to essential roles for star-form microRNAs (miRNA*, which are usually expressed at much lower levels. Owing to the nature of miRNA biogenesis, it is challenging to use plasmids containing miRNA coding sequences for gain-of-function experiments concerning the roles of microRNA* species. Synthetic microRNA mimics could introduce specific miRNA* species into cells, but this transient overexpression system has many shortcomings. Here, we report that specific miRNA* species can be overexpressed by introducing artificially designed stem-loop sequences into short hairpin RNA (shRNA overexpression vectors. By our prototypic plasmid, designed to overexpress hsa-miR-146b-3p, we successfully expressed high levels of hsa-miR-146b-3p without detectable change of hsa-miR-146b-5p. Functional analysis involving luciferase reporter assays showed that, like natural miRNAs, the overexpressed hsa-miR-146b-3p inhibited target gene expression by 3'UTR seed pairing. Our demonstration that this method could overexpress two other miRNAs suggests that the approach should be broadly applicable. Our novel strategy opens the way for exclusively stable overexpression of miRNA* species and analyzing their unique functions both in vitro and in vivo.

  17. Fullerene-based one-dimensional crystalline nanopolymer formed through topochemical transformation of the parent nanowire

    Geng, Junfeng; Solov'yov, Ilia; Reid, David G.

    2010-01-01

    Large-scale practical applications of fullerene (C_60) in nanodevices could be significantly facilitated if the commercially available micrometer-scale raw C_60 powder were further processed into a one-dimensional nanowire-related polymer displaying covalent bonding as molecular interlinks...... chromatography, mass spectrometry and ^13C nuclear magnetic resonance evidence is provided for the nature of the covalent bonding mode adopted by the polymeric chains. Theoretical analysis based on detailed calculations of the reaction energetics and structural analysis provides an in-depth understanding...

  18. Measuring the surface-enhanced Raman scattering enhancement factors of hot spots formed between an individual Ag nanowire and a single Ag nanocube

    Camargo, Pedro H C; Cobley, Claire M; Rycenga, Matthew; Xia Younan

    2009-01-01

    This paper describes a systematic study of the surface-enhanced Raman scattering (SERS) activity of hot spots formed between a Ag nanowire and a Ag nanocube with sharp corners. We investigated two distinct dimer structures: (i) a nanocube having one side face nearly touching the side face of a nanowire, and (ii) a nanocube having one edge nearly touching the side face of a nanowire. The field enhancements for the dimers displayed a strong dependence on laser polarization, and the strongest SERS intensities were observed for polarization along the hot-spot axis. Moreover, the detected SERS intensities were dependent on the hot-spot structure, i.e., the relative orientation of the Ag nanocube with respect to the nanowire's side face. When the dimer had a face-to-face configuration, the enhancement factor EF dimer was 1.4 x 10 7 . This corresponds to 22-fold and 24-fold increases compared to those for individual Ag nanowires and nanocubes, respectively. Conversely, when the dimer had an edge-to-face configuration, EF dimer was 4.3 x 10 6 . These results demonstrated that the number of probe molecules adsorbed at the hot spot played an important role in determining the detected SERS intensities. EF dimer was maximized when the dimer configuration allowed for a larger number of probe molecules to be trapped within the hot-spot region.

  19. Characteristics of CVD graphene nanoribbon formed by a ZnO nanowire hardmask

    Kang, Chang Goo; Kang, Jang Won; Lee, Seung Yong; Hwang, Hyeon Jun; Lee, Young Gon; Park, Seong-Ju; Lee, Byoung Hun [School of Material Science and Engineering, Gwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju, 500-712 (Korea, Republic of); Lee, Sang Kyung; Cho, Chun Hum [Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju, 500-712 (Korea, Republic of); Heo, Jinseong; Chung, Hyun-Jong; Yang, Heejun [Semiconductor Devices Lab, Samsung Advanced Institute of Technology, Yongin (Korea, Republic of); Seo, Sunae [Department of Physics, Sejong University, Gunja-Dong, Kwanggin-gu, Seoul (Korea, Republic of); Ko, Ki Young; Ahn, Jinho, E-mail: bhl@gist.ac.kr [Division of Materials Science and Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul, 133-791 (Korea, Republic of)

    2011-07-22

    A graphene nanoribbon (GNR) is an important basic structure to open a bandgap in graphene. The GNR processes reported in the literature are complex, time-consuming, and expensive; moreover, the device yield is relatively low. In this paper, a simple new process to fabricate a long and straight graphene nanoribbon with a high yield has been proposed. This process utilizes CVD graphene substrate and a ZnO nanowire as the hardmask for patterning. 8 {mu}m long and 50-100 nm wide GNRs were successfully demonstrated in high density without any trimming, and {approx} 10% device yield was realized with a top-down patterning process. After passivating the surfaces of the GNRs using a low temperature atomic layer deposition (ALD) of Al{sub 2}O{sub 3}, high performance GNR MOSFETs with symmetric drain-current-gate-voltage (I{sub d}-V{sub g}) curves were demonstrated and a field effect mobility up to {approx} 1200 cm{sup 2} V{sup -1} s{sup -1} was achieved at V{sub d} = 10 mV.

  20. The Effects of in Situ-Formed Silver Nanoparticles on the Electrical Properties of Epoxy Resin Filled with Silver Nanowires

    Gwang-Seok Song

    2016-04-01

    Full Text Available A novel method for preparing epoxy/silver nanocomposites was developed via the in situ formation of silver nanoparticles (AgNPs within the epoxy resin matrix while using silver nanowires (AgNWs as a conductive filler. The silver–imidazole complex was synthesized from silver acetate (AgAc and 1-(2-cyanoethyl-2-ethyl-4-methylimidazole (imidazole. AgNPs were generated in situ during the curing of the epoxy resin through the thermal decomposition of the AgAc–imidazole complex, which was capable of reducing Ag+ to Ag by itself. The released imidazole acted as a catalyst to cure the epoxy. Additionally, after the curing process, the in situ-generated AgNPs were stabilized by the formed epoxy network. Therefore, by using the thermal decomposition method, uniformly dispersed AgNPs of approximately 100 nm were formed in situ in the epoxy matrix filled with AgNWs. It was observed that the nanocomposites containing in situ-formed AgNPs exhibited isotropic electrical properties in the epoxy resins in the presence of AgNWs.

  1. Nanowire structures and electrical devices

    Bezryadin, Alexey; Remeika, Mikas

    2010-07-06

    The present invention provides structures and devices comprising conductive segments and conductance constricting segments of a nanowire, such as metallic, superconducting or semiconducting nanowire. The present invention provides structures and devices comprising conductive nanowire segments and conductance constricting nanowire segments having accurately selected phases including crystalline and amorphous states, compositions, morphologies and physical dimensions, including selected cross sectional dimensions, shapes and lengths along the length of a nanowire. Further, the present invention provides methods of processing nanowires capable of patterning a nanowire to form a plurality of conductance constricting segments having selected positions along the length of a nanowire, including conductance constricting segments having reduced cross sectional dimensions and conductance constricting segments comprising one or more insulating materials such as metal oxides.

  2. Analyzing the preference for non-exclusive forms of telecommuting: Modeling and policy implications

    Bagley, Michael N.; Mokhtarian, Patricia L.

    1997-01-01

    This study examines three models of the individual’s preference for home- and center-based telecommuting. Issues concerning the estimation of discrete models when the alternatives are non-exclusive are discussed. Two binary logit models are presented, one on the preference to telecommute from a center versus not telecommuting from a center (adjusted p2 = 0.24), and the other on the preference to telecommute from a center over telecommuting from home (adjusted 2 =0.64). A nested logit model is...

  3. Peculiarities of absorbed dose forming in some wild animals in Chornobyl exclusion zone

    V. A. Gaychenko

    2015-10-01

    Full Text Available Based on field researches conducted in the exclusion zone of the Chernobyl nuclear power plant in the years after the accident, the peculiarities are identified of formation of absorbed doses in animals of different taxonomic and ecological groups that live in conditions of radioactive contamination of ecosystems. It was shown importance of consideration of radiation features on wild animals according to their life cycle, conditions and ways of life. Data were displayed about the importance of different types of irradiation according to the period of stay of the animals in the ground, in burrows and nests. The questions were reviewed about value of external and internal radiation in absorbed dose of different types of wildlife. Results of the calculation of the absorbed dose of bird embryos from egg shell were shown.

  4. Peculiarities of absorbed dose forming in some wild animals in Chornobyl,y exclusion zone

    Gaychenko, V.A.; Krainiuk, O.Yu.

    2015-01-01

    Based on field researches conducted in the exclusion zone of the Chernobyl nuclear power plant in the years after the accident, identified the peculiarities of formation absorbed doses in animals of different taxonomic and ecological groups that live in conditions of radioactive contamination of ecosystems. Was shown importance of consideration of radiation features on wild animals according to their life cycle, conditions and ways of life. Was displayed data about the importance of different types of irradiation according to the period of stay the animals in the ground, in burrows and nests. Was reviewed the questions about value of external and internal radiation in absorbed dose of different types of wildlife. Was shown the results of the calculation of the absorbed dose of bird embryos from egg shell

  5. Analytic coupling and Sudakov effects in exclusive processes: pion and γ*γ→π0 form factors

    Stefanis, N.G.

    2000-01-01

    We develop and discuss in technical detail an infrared-finite factorization and optimized renormalization scheme for calculating exclusive processes, which enables the inclusion of transverse degrees of freedom without entailing suppression of calculated observables, like form factors. This is achieved by employing an analytic, i.e., infrared stable, running strong-coupling α s (Q 2 ) which removes the Landau singularity at Q 2 =Λ QCD 2 by a minimum power-behaved correction. The ensuing contributions to the cusp anomalous dimension - related to the Sudakov form factor - and to the quark anomalous dimension - which controls evolution - lead to an enhancement at high Q 2 of the hard part of exclusive amplitudes, calculated in perturbative QCD, while simultaneously improving its scaling behavior. The phenomenological implications of this framework are analyzed by applying it to the pion's electromagnetic form factor, including the NLO contribution to the hard-scattering amplitude, and also to the pion-photon transition at LO. For the pion wave function, an improved ansatz of the Brodsky-Huang-Lepage type is employed, which includes an effective (constituent-like) quark mass, m q =0.33 GeV. Predictions for both form factors are presented and compared to the experimental data, applying Brodsky-Lepage-Mackenzie commensurate scale setting. We find that the perturbative hard part prevails at momentum transfers above about 20 GeV 2 , while at lower Q 2 values the pion form factor is dominated by Feynman-type contributions. The theoretical prediction for the γ * γ→π 0 form factor indicates that the true pion distribution amplitude may be somewhat broader than the asymptotic one. (orig.)

  6. Nanowire sensor, sensor array, and method for making the same

    Yun, Minhee (Inventor); Myung, Nosang (Inventor); Vasquez, Richard (Inventor); Homer, Margie (Inventor); Ryan, Margaret (Inventor); Yen, Shiao-Pin (Inventor); Fleurial, Jean-Pierre (Inventor); Bugga, Ratnakumar (Inventor); Choi, Daniel (Inventor); Goddard, William (Inventor)

    2012-01-01

    The present invention relates to a nanowire sensor and method for forming the same. More specifically, the nanowire sensor comprises at least one nanowire formed on a substrate, with a sensor receptor disposed on a surface of the nanowire, thereby forming a receptor-coated nanowire. The nanowire sensor can be arranged as a sensor sub-unit comprising a plurality of homogeneously receptor-coated nanowires. A plurality of sensor subunits can be formed to collectively comprise a nanowire sensor array. Each sensor subunit in the nanowire sensor array can be formed to sense a different stimulus, allowing a user to sense a plurality of stimuli. Additionally, each sensor subunit can be formed to sense the same stimuli through different aspects of the stimulus. The sensor array is fabricated through a variety of techniques, such as by creating nanopores on a substrate and electrodepositing nanowires within the nanopores.

  7. Electrochemically grown rough-textured nanowires

    Tyagi, Pawan; Postetter, David; Saragnese, Daniel; Papadakis, Stergios J.; Gracias, David H.

    2010-01-01

    Nanowires with a rough surface texture show unusual electronic, optical, and chemical properties; however, there are only a few existing methods for producing these nanowires. Here, we describe two methods for growing both free standing and lithographically patterned gold (Au) nanowires with a rough surface texture. The first strategy is based on the deposition of nanowires from a silver (Ag)-Au plating solution mixture that precipitates an Ag-Au cyanide complex during electrodeposition at low current densities. This complex disperses in the plating solution, thereby altering the nanowire growth to yield a rough surface texture. These nanowires are mass produced in alumina membranes. The second strategy produces long and rough Au nanowires on lithographically patternable nickel edge templates with corrugations formed by partial etching. These rough nanowires can be easily arrayed and integrated with microscale devices.

  8. A silicon nanowire heater and thermometer

    Zhao, Xingyan; Dan, Yaping

    2017-07-01

    In the thermal conductivity measurements of thermoelectric materials, heaters and thermometers made of the same semiconducting materials under test, forming a homogeneous system, will significantly simplify fabrication and integration. In this work, we demonstrate a high-performance heater and thermometer made of single silicon nanowires (SiNWs). The SiNWs are patterned out of a silicon-on-insulator wafer by CMOS-compatible fabrication processes. The electronic properties of the nanowires are characterized by four-probe and low temperature Hall effect measurements. The I-V curves of the nanowires are linear at small voltage bias. The temperature dependence of the nanowire resistance allows the nanowire to be used as a highly sensitive thermometer. At high voltage bias, the I-V curves of the nanowire become nonlinear due to the effect of Joule heating. The temperature of the nanowire heater can be accurately monitored by the nanowire itself as a thermometer.

  9. The Short Form of the Breastfeeding Self-Efficacy Scale as a Prognostic Factor of Exclusive Breastfeeding among Mandarin-Speaking Chinese Mothers.

    Ip, Wan-Yim; Gao, Ling-Ling; Choi, Kai-Chow; Chau, Janita Pak-Chun; Xiao, Yang

    2016-11-01

    Little is known about the effect of maternal perceived breastfeeding self-efficacy on the exclusive breastfeeding rate at 6 months postpartum in mainland China. The aim of this study was to examine the relative effect of maternal breastfeeding self-efficacy and selected relevant factors on the exclusive breastfeeding rate at 6 months postpartum. The internal consistency and construct validity of the Chinese (Mandarin) version of the Breastfeeding Self-Efficacy Scale-Short Form (BSES-SF) were also examined. This was a prospective cohort study conducted at a regional teaching hospital in Guangzhou, China. A total of 562 in-hospital mothers who were within 72 hours postpartum were recruited to the study and followed up by telephone for 6 months. Although all of the mothers breastfed their babies within 72 hours postpartum, only 25% of the mothers breastfed exclusively. The mean survival time of continuation of exclusive breastfeeding was 16.7 days. The proportion of mothers who breastfed exclusively after discharge was 14.8%, 2.0%, and 0.2% at 1, 4, and 6 months, respectively. Cox regression analysis revealed that the mothers who had a higher BSES-SF score at baseline, underwent cesarean section, and practiced exclusive breastfeeding within 72 hours after delivery were significantly associated with a lower hazard of discontinuation of exclusive breastfeeding before 6 months postpartum. The exclusive breastfeeding rate among Chinese women is far from satisfactory. The Chinese (Mandarin) version of the BSES-SF can help in identifying mothers who need more support for exclusive breastfeeding before 6 months postpartum.

  10. Organic Nanowires

    Balzer, Frank; Schiek, Manuela; Al-Shamery, Katharina

    Single crystalline nanowires from fluorescing organic molecules like para-phenylenes or thiophenes are supposed to become key elements in future integrated optoelectronic devices [1]. For a sophisticated design of devices based on nanowires the basic principles of the nanowire formation have...... atomic force microscopy and from polarized far-field optical microscopy for various prototypical molecules are reproduced by electrostatic and Monte Carlo calculations. Based on the crystal structure, predictions on the growth habit from other conjugated molecules become in reach....

  11. Templated Control of Au nanospheres in Silica Nanowires

    Tringe, J W; Vanamu, G; Zaidi, S H

    2007-03-15

    The formation of regularly-spaced metal nanostructures in selectively-placed insulating nanowires is an important step toward realization of a wide range of nano-scale electronic and opto-electronic devices. Here we report templated synthesis of Au nanospheres embedded in silica nanowires, with nanospheres consistently spaced with a period equal to three times their diameter. Under appropriate conditions, nanowires form exclusively on Si nanostructures because of enhanced local oxidation and reduced melting temperatures relative to templates with larger dimensions. We explain the spacing of the nanospheres with a general model based on a vapor-liquid-solid mechanism, in which an Au/Si alloy dendrite remains liquid in the nanotube until a critical Si concentration is achieved locally by silicon oxide-generated nanowire growth. Additional Si oxidation then locally reduces the surface energy of the Au-rich alloy by creating a new surface with minimum area inside of the nanotube. The isolated liquid domain subsequently evolves to become an Au nanosphere, and the process is repeated.

  12. Methods for synthesizing metal oxide nanowires

    Sunkara, Mahendra Kumar; Kumar, Vivekanand; Kim, Jeong H.; Clark, Ezra Lee

    2016-08-09

    A method of synthesizing a metal oxide nanowire includes the steps of: combining an amount of a transition metal or a transition metal oxide with an amount of an alkali metal compound to produce a mixture; activating a plasma discharge reactor to create a plasma discharge; exposing the mixture to the plasma discharge for a first predetermined time period such that transition metal oxide nanowires are formed; contacting the transition metal oxide nanowires with an acid solution such that an alkali metal ion is exchanged for a hydrogen ion on each of the transition metal oxide nanowires; and exposing the transition metal oxide nanowires to the plasma discharge for a second predetermined time period to thermally anneal the transition metal oxide nanowires. Transition metal oxide nanowires produced using the synthesis methods described herein are also provided.

  13. Bridging Zirconia Nodes within a Metal–Organic Framework via Catalytic Ni-Hydroxo Clusters to Form Heterobimetallic Nanowires

    Platero-Prats, Ana E.; League, Aaron B.; Bernales, Varinia; Ye, Jingyun; Gallington, Leighanne C.

    2017-01-01

    Metal-organic frameworks (MOFs), with their well-ordered pore networks and tunable surface chemistries, offer a versatile platform for preparing well-defined nanostructures wherein functionality such as catalysis can be incorporated. Notably, atomic layer deposition (ALD) in MOFs has recently emerged as a versatile approach to functionalize MOF surfaces with a wide variety of catalytic metal-oxo species. Understanding the structure of newly deposited species and how they are tethered within the MOF is critical to understanding how these components couple to govern the active material properties. By combining local and long-range structure probes, including X-ray absorption spectroscopy, pair distribution function analysis and difference envelope density analysis, with electron microscopy imag-ing and computational modeling, we resolve the precise atomic structure of metal-oxo species deposited in the MOF NU-1000 through ALD. These analyses demonstrate that deposition of NiO x H y clusters occurs selectively within the smallest pores of NU-1000, between the zirconia nodes, serving to connect these nodes along the c-direction to yield hetero-bimetallic metal-oxo nanowires. Finally, this bridging motif perturbs the NU-1000 framework structure, drawing the zirconia nodes closer together, and also underlies the sintering-resistance of these clusters during the hydrogenation of light olefins.

  14. Structural and optical properties of ZnMgO nanostructures formed by Mg in-diffused ZnO nanowires

    Pan, C.-J.; Hsu, H.-C.; Cheng, H.-M.; Wu, C.-Y.; Hsieh, W.-F.

    2007-01-01

    ZnMgO nanostructures with wurtzite phase were prepared by thermal diffusion of Mg into the ZnO nanowires. As ZnO light-emitting devices have been operated by using ZnMgO layers as energy barrier layers to confine the carriers, it is essential to realize the characterization of ZnMgO particularly. In this work, the Mg content in Zn 1 -x Mg x O alloy determined by X-ray diffraction (XRD) and photoluminescence (PL) shows a good coincidence. The variation of lattice constant and the blueshift of near-band-edge emission indicate that Zn 2+ ions are successfully substituted by Mg 2+ ions in the ZnO lattice. In Raman-scattering studies, the change of E 2 (high) phonon line shape in ZnO:Mg nanostructures reveals the microscopic substitutional disorder. In addition to the host phonons of ZnO, two additional bands around 383 and 510 cm -1 are presumably attributed to the Mg-related vibrational modes. - Graphical abstract: We reported the synthesis of the ZnMgO nanostructures prepared by a simple vapor transport method. Magnesium-related anomalous modes are observed by Raman spectra for the first time in ZnMgO system

  15. Nanowire Lasers

    Couteau C.

    2015-05-01

    Full Text Available We review principles and trends in the use of semiconductor nanowires as gain media for stimulated emission and lasing. Semiconductor nanowires have recently been widely studied for use in integrated optoelectronic devices, such as light-emitting diodes (LEDs, solar cells, and transistors. Intensive research has also been conducted in the use of nanowires for subwavelength laser systems that take advantage of their quasione- dimensional (1D nature, flexibility in material choice and combination, and intrinsic optoelectronic properties. First, we provide an overview on using quasi-1D nanowire systems to realize subwavelength lasers with efficient, directional, and low-threshold emission. We then describe the state of the art for nanowire lasers in terms of materials, geometry, andwavelength tunability.Next,we present the basics of lasing in semiconductor nanowires, define the key parameters for stimulated emission, and introduce the properties of nanowires. We then review advanced nanowire laser designs from the literature. Finally, we present interesting perspectives for low-threshold nanoscale light sources and optical interconnects. We intend to illustrate the potential of nanolasers inmany applications, such as nanophotonic devices that integrate electronics and photonics for next-generation optoelectronic devices. For instance, these building blocks for nanoscale photonics can be used for data storage and biomedical applications when coupled to on-chip characterization tools. These nanoscale monochromatic laser light sources promise breakthroughs in nanophotonics, as they can operate at room temperature, can potentially be electrically driven, and can yield a better understanding of intrinsic nanomaterial properties and surface-state effects in lowdimensional semiconductor systems.

  16. Template-based fabrication of nanowire-nanotube hybrid arrays

    Ye Zuxin; Liu Haidong; Schultz, Isabel; Wu Wenhao; Naugle, D G; Lyuksyutov, I

    2008-01-01

    The fabrication and structure characterization of ordered nanowire-nanotube hybrid arrays embedded in porous anodic aluminum oxide (AAO) membranes are reported. Arrays of TiO 2 nanotubes were first deposited into the pores of AAO membranes by a sol-gel technique. Co nanowires were then electrochemically deposited into the TiO 2 nanotubes to form the nanowire-nanotube hybrid arrays. Scanning electron microscopy and transmission electron microscopy measurements showed a high nanowire filling factor and a clean interface between the Co nanowire and the TiO 2 nanotube. Application of these hybrids to the fabrication of ordered nanowire arrays with highly controllable geometric parameters is discussed

  17. Semiconductor nanowires and templates for electronic applications

    Ying, Xiang

    2009-07-15

    This thesis starts by developing a platform for the organized growth of nanowires directly on a planar substrate. For this, a method to fabricate horizontal porous alumina membranes is studied. The second part of the thesis focuses on the study of nanowires. It starts by the understanding of the growth mechanisms of germanium nanowires and follows by the structural and electrical properties at the single nanowire level. Horizontally aligned porous anodic alumina (PAA) was used as a template for the nanowire synthesis. Three PAA arrangements were studied: - high density membranes - micron-sized fingers - multi-contacts Membranes formed by a high density of nanopores were obtained by anodizing aluminum thin films. Metallic and semiconducting nanowires were synthesized into the PAA structures via DC deposition, pulsed electro-depostion and CVD growth. The presence of gold, copper, indium, nickel, tellurium, and silicon nanowires inside PAA templates was verified by SEM and EDX analysis. Further, room-temperature transport measurements showed that the pores are completely filled till the bottom of the pores. In this dissertation, single crystalline and core-shell germanium nanowires are synthesized using indium and bismuth as catalyst in a chemical vapor deposition procedure with germane (GeH{sub 4}) as growth precursor. A systematic growth study has been performed to obtain high aspect-ratio germanium nanowires. The influence of the growth conditions on the final morphology and the crystalline structure has been determined via scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). In the case of indium catalyzed germanium nanowires, two different structures were identified: single crystalline and crystalline core-amorphous shell. The preferential growth axis of both kinds of nanowires is along the [110] direction. The occurrence of the two morphologies was found to only depend on the nanowire dimension. In the case of bismuth

  18. Template synthesis of indium nanowires using anodic aluminum oxide membranes.

    Chen, Feng; Kitai, Adrian H

    2008-09-01

    Indium nanowires with diameters approximately 300 nm have been synthesized by a hydraulic pressure technique using anodic aluminum oxide (AAO) templates. The indium melt is injected into the AAO template and solidified to form nanostructures. The nanowires are dense, continuous and uniformly run through the entire approximately 60 microm thickness of the AAO template. X-ray diffraction (XRD) reveals that the nanowires are polycrystalline with a preferred orientation. SEM is performed to characterize the morphology of the nanowires.

  19. Study of GaN nanowires converted from β-Ga2O3 and photoconduction in a single nanowire

    Kumar, Mukesh; Kumar, Sudheer; Chauhan, Neha; Sakthi Kumar, D.; Kumar, Vikram; Singh, R.

    2017-08-01

    The formation of GaN nanowires from β-Ga2O3 nanowires and photoconduction in a fabricated single GaN nanowire device has been studied. Wurtzite phase GaN were formed from monoclinic β-Ga2O3 nanowires with or without catalyst particles at their tips. The formation of faceted nanostructures from catalyst droplets presented on a nanowire tip has been discussed. The nucleation of GaN phases in β-Ga2O3 nanowires and their subsequent growth due to interfacial strain energy has been examined using a high resolution transmission electron microscope. The high quality of the converted GaN nanowire is confirmed by fabricating single nanowire photoconducting devices which showed ultra high responsivity under ultra-violet illumination.

  20. Highly aligned vertical GaN nanowires using submonolayer metal catalysts

    Wang, George T [Albuquerque, NM; Li, Qiming [Albuquerque, NM; Creighton, J Randall [Albuquerque, NM

    2010-06-29

    A method for forming vertically oriented, crystallographically aligned nanowires (nanocolumns) using monolayer or submonolayer quantities of metal atoms to form uniformly sized metal islands that serve as catalysts for MOCVD growth of Group III nitride nanowires.

  1. Synthesis of silver nanowires using hydrothermal technique for flexible transparent electrode application

    Vijila, C. V. Mary; Rahman, K. K. Arsina; Parvathy, N. S.; Jayaraj, M. K., E-mail: mkj@cusat.ac.in [Nanophotonic and Optoelectronic Division, Dept. of Physics, Cochin University of Science and Technology, Kochi, Kerala (India)

    2016-05-23

    Transparent conducting films are becoming increasingly interesting because of their applications in electronics industry such as their use in solar energy applications. In this work silver nanowires were synthesized using solvothermal method by reducing silver nitrate and adding sodium chloride for assembling silver into nanowires. Absorption spectra of nanowires in the form of a dispersion in deionized water, AFM and SEM images confirm the nanowire formation. Solution of nanowire was coated over PET films to obtain transparent conducting films.

  2. Aging of Organic Nanowires

    Balzer, Frank; Schiek, Manuela; Osadnik, Andreas

    2012-01-01

    Organic semiconductors formed by epitaxial growth from small molecules such as the para-phenylenes or squaraines promise a vast application potential as the active ingredient in electric and optoelectronic devices. Their self-organization into organic nanowires or "nanofibers" adds a peculiar...... attribute, making them especially interesting for light generation in OLEDs and for light-harvesting devices such as solar cells. Functionalization of the molecules allows the customization of optical and electrical properties. However, aging of the wires might lead to a considerable decrease in device...... performance over time. In this study the morphological stability of organic nanoclusters and nanowires from the methoxy functionalized quaterphenylene, 4,4'''dimethoxy-1,1':4',1''4'',1'''-quaterphenylene (MOP4), is investigated in detail. Aging experiments conducted by atomic force microscopy under ambient...

  3. Hydrogen Generation using non-polar coaxial InGaN/GaN Multiple Quantum Well Structure Formed on Hollow n-GaN Nanowires.

    Park, Ji-Hyeon; Mandal, Arjun; Kang, San; Chatterjee, Uddipta; Kim, Jin Soo; Park, Byung-Guon; Kim, Moon-Deock; Jeong, Kwang-Un; Lee, Cheul-Ro

    2016-08-24

    This article demonstrates for the first time to the best of our knowledge, the merits of InGaN/GaN multiple quantum wells (MQWs) grown on hollow n-GaN nanowires (NWs) as a plausible alternative for stable photoelectrochemical water splitting and efficient hydrogen generation. These hollow nanowires are achieved by a growth method rather not by conventional etching process. Therefore this approach becomes simplistic yet most effective. We believe relatively low Ga flux during the selective area growth (SAG) aids the hollow nanowire to grow. To compare the optoelectronic properties, simultaneously solid nanowires are also studied. In this present communication, we exhibit that lower thermal conductivity of hollow n-GaN NWs affects the material quality of InGaN/GaN MQWs by limiting In diffusion. As a result of this improvement in material quality and structural properties, photocurrent and photosensitivity are enhanced compared to the structures grown on solid n-GaN NWs. An incident photon-to-current efficiency (IPCE) of around ~33.3% is recorded at 365 nm wavelength for hollow NWs. We believe that multiple reflections of incident light inside the hollow n-GaN NWs assists in producing a larger amount of electron hole pairs in the active region. As a result the rate of hydrogen generation is also increased.

  4. Transformation of bulk alloys to oxide nanowires

    Lei, Danni; Benson, Jim; Magasinski, Alexandre; Berdichevsky, Gene; Yushin, Gleb

    2017-01-01

    One dimensional (1D) nanostructures offer prospects for enhancing the electrical, thermal, and mechanical properties of a broad range of functional materials and composites, but their synthesis methods are typically elaborate and expensive. We demonstrate a direct transformation of bulk materials into nanowires under ambient conditions without the use of catalysts or any external stimuli. The nanowires form via minimization of strain energy at the boundary of a chemical reaction front. We show the transformation of multimicrometer-sized particles of aluminum or magnesium alloys into alkoxide nanowires of tunable dimensions, which are converted into oxide nanowires upon heating in air. Fabricated separators based on aluminum oxide nanowires enhanced the safety and rate capabilities of lithium-ion batteries. The reported approach allows ultralow-cost scalable synthesis of 1D materials and membranes.

  5. Preparation and Characterization of Tin Oxide Nanowires

    A. Kabiri

    2013-12-01

    Full Text Available The aim of this research is preparation of SnO2 nanowires by means of Thermal chemical reaction vapor transport deposition (TCRVTD method from SnO powders. The morphology, chemical composition and microstructure properties of the nanowires are characterized using field emission scanning electron microscope (FE-SEM, EDS, and XRD. The XRD diffraction patterns reveal that the SnO2 nanowires have been grown in the form of tetragonal crystal structures with the lattice parameter of a=b=0.440 nm, and c=0.370 nm. The SEM images reveal that SnO2 nanowires have successfully been grown on the Si substrate. The EDS patterns show that only elements of Sn, O and Au are detected. Prior to the VLS process the substrate is coated by a thin layer of Au. The diameter of nanowires is measured to be something between 20-100 nm.

  6. Electron Transport Properties of Ge nanowires

    Hanrath, Tobias; Khondaker, Saiful I.; Yao, Zhen; Korgel, Brian A.

    2003-03-01

    Electron Transport Properties of Ge nanowires Tobias Hanrath*, Saiful I. Khondaker, Zhen Yao, Brian A. Korgel* *Dept. of Chemical Engineering, Dept. of Physics, Texas Materials Institute, and Center for Nano- and Molecular Science and Technology University of Texas at Austin, Austin, Texas 78712-1062 e-mail: korgel@mail.che.utexas.edu Germanium (Ge) nanowires with diameters ranging from 6 to 50 nm and several micrometer in length were grown via a supercritical fluid-liquid-solid synthesis. Parallel electron energy loss spectroscopy (PEELS) was employed to study the band structure and electron density in the Ge nanowires. The observed increase in plasmon peak energy and peak width with decreasing nanowire diameter is attributed to quantum confinement effects. For electrical characterization, Ge nanowires were deposited onto a patterned Si/SiO2 substrate. E-beam lithography was then used to form electrode contacts to individual nanowires. The influence of nanowire diameter, surface chemistry and crystallographic defects on electron transport properties were investigated and the comparison of Ge nanowire conductivity with respect to bulk, intrinsic Ge will be presented.

  7. Preparation and characterization of CuO nanowire arrays

    Yu Dongliang; Ge Chuannan; Du Youwei

    2009-01-01

    CuO nanowire arrays were prepared by oxidation of copper nanowires embedded in anodic aluminum oxide (AAO) membranes. The AAO was fabricated in an oxalic acid at a constant voltage. Copper nanowires were formed in the nanopores of the AAO membranes in an electrochemical deposition process. The oxidized copper nanowires at different temperatures were studied. X-ray diffraction patterns confirmed the formation of a CuO phase after calcining at 500 0 C in air for 30 h. A transmission electron microscopy was used to characterize the nanowire morphologies. Raman spectra were performed to study the CuO nanowire arrays. After measuring, we found that the current-voltage curve of the CuO nanowires is nonlinear.

  8. Inkjet-printed transparent nanowire thin film features for UV photodetectors

    Chen, Shih Pin; Duran Retamal, Jose Ramon; Lien, Der Hsien; He, Jr-Hau; Liao, Ying Chih

    2015-01-01

    In this study, a simple and effective direct printing method was developed to print patterned nanowire thin films for UV detection. Inks containing silver or titanium dioxide (TiO2) nanowires were first formulated adequately to form stable

  9. Structural and electrochemical study of the reaction of lithium with silicon nanowires

    Chan, Candace K.; Ruffo, Riccardo; Hong, Seung Sae; Huggins, Robert A.; Cui, Yi

    2009-01-01

    The structural transformations of silicon nanowires when cycled against lithium were evaluated using electrochemical potential spectroscopy and galvanostatic cycling. During the charge, the nanowires alloy with lithium to form an amorphous Lix

  10. Manganese oxide nanowires, films, and membranes and methods of making

    Suib, Steven Lawrence [Storrs, CT; Yuan, Jikang [Storrs, CT

    2008-10-21

    Nanowires, films, and membranes comprising ordered porous manganese oxide-based octahedral molecular sieves, and methods of making, are disclosed. A single crystal ultra-long nanowire includes an ordered porous manganese oxide-based octahedral molecular sieve, and has an average length greater than about 10 micrometers and an average diameter of about 5 nanometers to about 100 nanometers. A film comprises a microporous network comprising a plurality of single crystal nanowires in the form of a layer, wherein a plurality of layers is stacked on a surface of a substrate, wherein the nanowires of each layer are substantially axially aligned. A free standing membrane comprises a microporous network comprising a plurality of single crystal nanowires in the form of a layer, wherein a plurality of layers is aggregately stacked, and wherein the nanowires of each layer are substantially axially aligned.

  11. Magnetic and superconducting nanowires

    Piraux, L.; Encinas, A.; Vila, L.

    2005-01-01

    magnetic and superconducting nanowires. Using different approaches entailing measurements on both single wires and arrays, numerous interesting physical properties have been identified in relation to the nanoscopic dimensions of these materials. Finally, various novel applications of the nanowires are also...

  12. Vertical nanowire architectures

    Vlad, A.; Mátéfl-Tempfli, M.; Piraux, L.

    2010-01-01

    Nanowires and statistics: A statistical process for reading ultradense arrays of nanostructured materials is presented (see image). The experimental realization is achieved through selective nanowire growth using porous alumina templates. The statistical patterning approach is found to provide ri...

  13. Electrodeposition of rhenium-tin nanowires

    Naor-Pomerantz, Adi; Eliaz, Noam; Gileadi, Eliezer

    2011-01-01

    Highlights: → Rhenium-tin nanowires were formed electrochemically, without using a template. → The nanowires consisted of a crystalline-Sn-core/amorphous-Re-shell structure. → The effects of bath composition and operating conditions were investigated. → A mechanism is suggested for the formation of the core/shell structure. → The nanowires may be attractive for a variety of applications. - Abstract: Rhenium (Re) is a refractory metal which exhibits an extraordinary combination of properties. Thus, nanowires and other nanostructures of Re-alloys may possess unique properties resulting from both Re chemistry and the nanometer scale, and become attractive for a variety of applications, such as in catalysis, photovoltaic cells, and microelectronics. Rhenium-tin coatings, consisting of nanowires with a core/shell structure, were electrodeposited on copper substrates under galvanostatic or potentiostatic conditions. The effects of bath composition and operating conditions were investigated, and the chemistry and structure of the coatings were studied by a variety of analytical tools. A Re-content as high as 77 at.% or a Faradaic efficiency as high as 46% were attained. Ranges of Sn-to-Re in the plating bath, applied current density and applied potential, within which the nanowires could be formed, were determined. A mechanism was suggested, according to which Sn nanowires were first grown on top of Sn micro-particles, and then the Sn nanowires reduced the perrhenate chemically, thus forming a core made of crystalline Sn-rich phase, and a shell made of amorphous Re-rich phase. The absence of mutual solubility of Re and Sn may be the driving force for this phase separation.

  14. Vertical group III-V nanowires on si, heterostructures, flexible arrays and fabrication

    Wang, Deli; Soci, Cesare; Bao, Xinyu; Wei, Wei; Jing, Yi; Sun, Ke

    2015-01-13

    Embodiments of the invention provide a method for direct heteroepitaxial growth of vertical III-V semiconductor nanowires on a silicon substrate. The silicon substrate is etched to substantially completely remove native oxide. It is promptly placed in a reaction chamber. The substrate is heated and maintained at a growth temperature. Group III-V precursors are flowed for a growth time. Preferred embodiment vertical Group III-V nanowires on silicon have a core-shell structure, which provides a radial homojunction or heterojunction. A doped nanowire core is surrounded by a shell with complementary doping. Such can provide high optical absorption due to the long optical path in the axial direction of the vertical nanowires, while reducing considerably the distance over which carriers must diffuse before being collected in the radial direction. Alloy composition can also be varied. Radial and axial homojunctions and heterojunctions can be realized. Embodiments provide for flexible Group III-V nanowire structures. An array of Group III-V nanowire structures is embedded in polymer. A fabrication method forms the vertical nanowires on a substrate, e.g., a silicon substrate. Preferably, the nanowires are formed by the preferred methods for fabrication of Group III-V nanowires on silicon. Devices can be formed with core/shell and core/multi-shell nanowires and the devices are released from the substrate upon which the nanowires were formed to create a flexible structure that includes an array of vertical nanowires embedded in polymer.

  15. The Role of Surface Passivation in Controlling Ge Nanowire Faceting.

    Gamalski, A D; Tersoff, J; Kodambaka, S; Zakharov, D N; Ross, F M; Stach, E A

    2015-12-09

    In situ transmission electron microscopy observations of nanowire morphologies indicate that during Au-catalyzed Ge nanowire growth, Ge facets can rapidly form along the nanowire sidewalls when the source gas (here, digermane) flux is decreased or the temperature is increased. This sidewall faceting is accompanied by continuous catalyst loss as Au diffuses from the droplet to the wire surface. We suggest that high digermane flux and low temperatures promote effective surface passivation of Ge nanowires with H or other digermane fragments inhibiting diffusion and attachment of Au and Ge on the sidewalls. These results illustrate the essential roles of the precursor gas and substrate temperature in maintaining nanowire sidewall passivation, necessary to ensure the growth of straight, untapered, ⟨111⟩-oriented nanowires.

  16. Ultraviolet photodetectors made from SnO2 nanowires

    Wu, Jyh-Ming; Kuo, Cheng-Hsiang

    2009-01-01

    SnO 2 nanowires can be synthesized on alumina substrates and formed into an ultraviolet (UV) photodetector. The photoelectric current of the SnO 2 nanowires exhibited a rapid photo-response as a UV lamp was switched on and off. The ratio of UV-exposed current to dark current has been investigated. The SnO 2 nanowires were synthesized by a vapor-liquid-solid process at a temperature of 900 o C. It was found that the nanowires were around 70-100 nm in diameter and several hundred microns in length. High-resolution transmission electron microscopy (HRTEM) image indicated that the nanowires grew along the [200] axis as a single crystallinity. Cathodoluminescence (CL), thin-film X-ray diffractometry, and X-ray photoelectron spectroscopy (XPS) were used to characterize the as-synthesized nanowires.

  17. Synthesis of SERS active Au nanowires in different noncoordinating solvents

    Hou Xiaomiao; Zhang Xiaoling, E-mail: zhangxl@bit.edu.cn [Key Laboratory of Cluster Science of Ministry of Education, Beijing Institute of Technology, Department of Chemistry, School of Science (China); Fang Yan, E-mail: fangyan@mail.cnu.edu.cn [Beijing Key Laboratory for Nano-Photonics and Nano-Structure (NPNS), Capital Normal University (China); Chen Shutang; Li Na; Zhou Qi [Key Laboratory of Cluster Science of Ministry of Education, Beijing Institute of Technology, Department of Chemistry, School of Science (China)

    2011-06-15

    Au nanowires with length up to micrometers were synthesized through a simple and one-pot solution growth method. HAuCl{sub 4} was reduced in a micellar structure formed by 1-octadecylamine and oleic acid in hexane, heptane, toluene and chloroform, respectively. As the non-polarity of noncoordinating solvents can affect the nucleation and growth rates of Au nanostructures, Au nanowires with different diameters could be obtained by changing the noncoordinating solvents in the synthetic process. The influences of the solvents on the morphology of Au nanowires were systematically studied. When using hexane as reaction solvent, the product turned to be high portion of Au nanowires with more uniform size than the others. Furthermore, surface-enhanced Raman scattering (SERS) spectrum of 2-thionaphthol was obtained on the Au nanowire-modified substrate, indicating that the as-synthesized Au nanowires have potential for highly sensitive optical detection application.

  18. Synthesis and Growth Mechanism of Ni Nanotubes and Nanowires

    Wang Yiqian

    2009-01-01

    Full Text Available Abstract Highly ordered Ni nanotube and nanowire arrays were fabricated via electrodeposition. The Ni microstructures and the process of the formation were investigated using conventional and high-resolution transmission electron microscope. Herein, we demonstrated the systematic fabrication of Ni nanotube and nanowire arrays and proposed an original growth mechanism. With the different deposition time, nanotubes or nanowires can be obtained. Tubular nanostructures can be obtained at short time, while nanowires take longer time to form. This formation mechanism is applicable to design and synthesize other metal nanostructures and even compound nanostuctures via template-based electrodeposition.

  19. Nanowire Growth for Photovoltaics

    Holm, Jeppe Vilstrup

    Solar cells commercial success is based on an efficiency/cost calculation. Nanowire solar cells is one of the foremost candidates to implement third generation photo voltaics, which are both very efficient and cheap to produce. This thesis is about our progress towards commercial nanowire solar...... cells. Resonance effects between the light and nanowire causes an inherent concentration of the sunlight into the nanowires, and means that a sparse array of nanowires (less than 5% of the area) can absorb all the incoming light. The resonance effects, as well as a graded index of refraction, also traps...... the light. The concentration and light trapping means that single junction nanowire solar cells have a higher theoretical maximum efficiency than equivalent planar solar cells. We have demonstrated the built-in light concentration of nanowires, by growing, contacting and characterizing a solar cell...

  20. Evaluating Alternatives to Exclusive "He."

    Todd-Mancillas, William R.

    A study was conducted to determine the effects on reading comprehension of the use of the exclusive pronoun "he" and more or less contrived alternatives. Subjects, 358 students enrolled in an introduction to human communication at a large northeastern university, read three different forms of the same essay. One essay form exclusively used "he,"…

  1. Nanowires-based light emitters on thermally and electrically conductive substrates and of making same

    Ooi, Boon S.; Zhao, Chao; Ng, Tien Khee

    2017-01-01

    Elemental or compound semiconductors on metal substrates and methods of growing them are provided. The methods can include the steps of: (i) providing a metal substrate; (ii) adding an interlayer on a surface of the metal substrate, and (iii) growing semiconductor nanowires on the interlayer using a semiconductor epitaxy growth system to form the elemental or compound semiconductor. The method can include direct growth of high quality group III-V and group III-N based materials in the form of nanowires and nanowires-based devices on metal substrates. The nanowires on all- metal scheme greatly simplifies the fabrication process of nanowires based high power light emitters.

  2. Nanowires-based light emitters on thermally and electrically conductive substrates and of making same

    Ooi, Boon S.

    2017-04-27

    Elemental or compound semiconductors on metal substrates and methods of growing them are provided. The methods can include the steps of: (i) providing a metal substrate; (ii) adding an interlayer on a surface of the metal substrate, and (iii) growing semiconductor nanowires on the interlayer using a semiconductor epitaxy growth system to form the elemental or compound semiconductor. The method can include direct growth of high quality group III-V and group III-N based materials in the form of nanowires and nanowires-based devices on metal substrates. The nanowires on all- metal scheme greatly simplifies the fabrication process of nanowires based high power light emitters.

  3. A avaliação e as reformas dos anos de 1990: novas formas de exclusão, velhas formas de subordinação Assessment and the 1990s' reforms: new forms of exclusion, old forms of subordination

    Luiz Carlos de Freitas

    2004-04-01

    Full Text Available Examina-se o impacto das reformas neoliberais e da pós-modernização ingênua do pensamento educacional como instrumentos articulados de desconstrução do pensamento progressista e de retorno a teses positivistas/pragmatistas no campo da educação. Mascaradas como incertezas, exaltadas como diferenças e justificadas como caos, sua função é impedir-nos de pensar o futuro e abrir espaço para que ele seja planejado na ótica das necessidades do capital, com plena liberdade de valorização. Procura-se ainda mostrar como as reformas educacionais dos anos de 1990, desenvolvidas nesse contexto, viabilizaram, apoiando-se na avaliação informal, novas formas de exclusão pelo interior do sistema educacional, mantendo intacta sua tarefa de formar para a submissão, por meio da ocultação do debate sobre as finalidades da educação.This paper explores the impact of both the neoliberal reforms and the naive post-modernization of thought as articulated tools to deconstruct the progressive thought and go back to positivist/pragmatist theses in the field of education. Concealed as uncertainties, exalted as differences, justified as chaos, these tools attempt to prevent us from thinking about the future and open spaces to plan it according to the needs of capital, enabling all kinds of valorization. The text then strives to show how, based on informal assessment, the 1990s' educational reforms developed in this context favored new forms of exclusion from within the educational system, whose function of training for submission remained untouched through the occultation of the debate on the objectives of education.

  4. From nanodiamond to nanowires.

    Barnard, A.; Materials Science Division

    2005-01-01

    Recent advances in the fabrication and characterization of semiconductor and metallic nanowires are proving very successful in meeting the high expectations of nanotechnologists. Although the nanoscience surrounding sp{sup 3} bonded carbon nanotubes has continued to flourish over recent years the successful synthesis of the sp{sup 3} analogue, diamond nanowires, has been limited. This prompts questions as to whether diamond nanowires are fundamentally unstable. By applying knowledge obtained from examining the structural transformations in nanodiamond, a framework for analyzing the structure and stability of diamond nanowires may be established. One possible framework will be discussed here, supported by results of ab initio density functional theory calculations used to study the structural relaxation of nanodiamond and diamond nanowires. The results show that the structural stability and electronic properties of diamond nanowires are dependent on the surface morphology, crystallographic direction of the principal axis, and the degree of surface hydrogenation.

  5. Growth Mechanism of Nanowires: Ternary Chalcogenides

    Singh, N. B.; Coriell, S. R.; Hopkins, R. H.; Su, Ching Hua; Arnold, B.; Choa, Fow-Sen; Cullum, Brian

    2016-01-01

    In the past two decades there has been a large rise in the investment and expectations for nanotechnology use. Almost every area of research has projected improvements in sensors, or even a promise for the emergence of some novel device technologies. For these applications major focuses of research are in the areas of nanoparticles and graphene. Although there are some near term applications with nanowires in photodetectors and other low light detectors, there are few papers on the growth mechanism and fabrication of nanowire-based devices. Semiconductor nanowires exhibit very favorable and promising optical properties, including high transparency and a several order of magnitude better photocurrent than thin film and bulk materials. We present here an overview of the mechanism of nanowire growth from the melt, and some preliminary results for the thallium arsenic selenide material system. Thallium arsenic selenide (TAS) is a multifunctional material combining excellent acousto-optical, nonlinear and radiation detection properties. We observed that small units of (TAS) nanocubes arrange and rearrange at moderate melt undercooling to form the building block of a nanowire. In some cases very long wires (less than mm) are formed. Since we avoided the catalyst, we observed self-nucleation and uncontrolled growth of wires from different places.

  6. Nanowire Photovoltaic Devices

    Forbes, David

    2015-01-01

    Firefly Technologies, in collaboration with the Rochester Institute of Technology and the University of Wisconsin-Madison, developed synthesis methods for highly strained nanowires. Two synthesis routes resulted in successful nanowire epitaxy: direct nucleation and growth on the substrate and a novel selective-epitaxy route based on nanolithography using diblock copolymers. The indium-arsenide (InAs) nanowires are implemented in situ within the epitaxy environment-a significant innovation relative to conventional semiconductor nanowire generation using ex situ gold nanoparticles. The introduction of these nanoscale features may enable an intermediate band solar cell while simultaneously increasing the effective absorption volume that can otherwise limit short-circuit current generated by thin quantized layers. The use of nanowires for photovoltaics decouples the absorption process from the current extraction process by virtue of the high aspect ratio. While no functional solar cells resulted from this effort, considerable fundamental understanding of the nanowire epitaxy kinetics and nanopatterning process was developed. This approach could, in principle, be an enabling technology for heterointegration of dissimilar materials. The technology also is applicable to virtual substrates. Incorporating nanowires onto a recrystallized germanium/metal foil substrate would potentially solve the problem of grain boundary shunting of generated carriers by restricting the cross-sectional area of the nanowire (tens of nanometers in diameter) to sizes smaller than the recrystallized grains (0.5 to 1 micron(exp 2).

  7. Functionalised Silver Nanowire Structures

    Andrew, Piers; Ilie, Adelina

    2007-01-01

    Crystalline silver nanowires 60-100 nm in diameter and tens of micrometres in length have been fabricated using a low temperature, solution synthesis technique. We explore the potential of this method to produce functional nanowire structures using two different strategies to attach active molecules to the nanowires: adsorption and displacement. Initially, as-produced silver nanowires capped with a uniaxial-growth-inducing polymer layer were functionalised by solution adsorption of a semiconducting conjugated polymer to generate fluorescent nanowire structures. The influence of nanowire surface chemistry was investigated by displacing the capping polymer with an alkanethiol self-assembled monolayer, followed by solution adsorption functionalisation. The success of molecular attachment was monitored by electron microscopy, absorption and fluorescence spectroscopy and confocal fluorescence microscopy. We examined how the optical properties of such adsorbed molecules are affected by the metallic nanowires, and observed transfer of excitation energy between dye molecules mediated by surface plasmons propagating on the nanowires. Non-contact dynamic force microscopy measurements were used to map the work-function of individual wires, revealing inhomogeneity of the polymer surface coverage

  8. Stability of Organic Nanowires

    Balzer, F.; Schiek, M.; Wallmann, I.

    2011-01-01

    The morphological stability of organic nanowires over time and under thermal load is of major importance for their use in any device. In this study the growth and stability of organic nanowires from a naphthyl end-capped thiophene grown by organic molecular beam deposition is investigated via ato...

  9. Fabrication and morphology of uniaxially aligned perylenediimide nanowires

    Machida, Shinjiro; Tanikatsu, Makoto; Itaya, Akira; Ikeda, Noriaki

    2017-06-01

    Uniaxial alignment of crystalline nanowires consisting of N,N‧-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8) was achieved on poly(tetrafluoroethylene) (PTFE) layers prepared by friction transfer method on a glass substrate. The nanowires were formed by spin-coating a trifluoroacetic acid (TFA) solution of PTCDI-C8 on the PTFE layers and were further grown under TFA vapor atmosphere. The morphology of the PTCDI-C8 nanowires were characterized using atomic force microscope (AFM) and fluorescence optical microscope with changing the dye concentration in the spin coating solution, annealing time in the TFA vapor, and substrate materials. The nanowires prepared on the PTFE layer on a silica-coated silicon or a mica substrate did not grow so well as those on the glass substrate. This result suggests that the surface roughness would affect the PTFE layer and the growth of the PTCDI nanowires.

  10. Tuning wettability of hydrogen titanate nanowire mesh by Na+ irradiation

    Das, Pritam; Chatterjee, Shyamal

    2018-04-01

    Hydrogen titanate (HT) nanowires have been widely studied for remarkable properties and various potential applications. However, a handful studies are available related to ion beam induced structural changes and influence on wetting behavior of the HT nanowire surface. In this work, we exposed HT nanowires to 5 keV Na+ at an ion fluence of 1×1016 ions.cm-2. Scanning electron microscope shows that at this ion fluence nanowires are bent arbitrarily and they are welded to each other forming an interlinked network structure. Computer simulation shows that ion beam induces defect formation in the nanowires, which plays major role in such structural modifications. An interesting alteration of surface wetting property is observed due to ion irradiation. The hydrophilic pristine surface turns into hydrophobic after ion irradiation.

  11. Methods of fabricating nanostructures and nanowires and devices fabricated therefrom

    Majumdar, Arun; Shakouri, Ali; Sands, Timothy D.; Yang, Peidong; Mao, Samuel S.; Russo, Richard E.; Feick, Henning; Weber, Eicke R.; Kind, Hannes; Huang, Michael; Yan, Haoquan; Wu, Yiying; Fan, Rong

    2018-01-30

    One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as "nanowires", include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

  12. Distribution of {sup 90} Sr and {sup 137} Cs in vertical soil sections of the Chernobyl exclusion zone.; Raspredelenie form nakhozhdeniya {sup 90} Sr i {sup 137} Cs po vertikal`nym pochvennym razrezam Zony otchuzhdeniya ChAEhS.

    Bondarenko, G N; Kononenko, L.V. [AN Ukrainskoj SSR, Kiev (Ukraine). Inst. Geokhimii i Fiziki Mineralov

    1994-12-31

    Water-soluble, exchangeable and acid-soluble (IM HCI) forms of {sup 90} Sr and {sup 137} Cs were determined in 15 layer-by-layer (1 cm) samples of podzolis and peaty soils from the Chernobyl exclusion zone taken in 1991 and 1992. Positions of centers of {sup 137} Cs and {sup 90} Sr supply as well as their water-soluble and exchangeable forms were estimated. The data obtained testify to deceleration of vertical migration of {sup 137} Cs in soils till the early 90th. The conclusion is made on evolution of dominating mechanisms of vertical migration of radionuclides. It consists in a decrease of the lessivage significance.

  13. Pattern analysis of aligned nanowires in a microchannel

    Jeon, Young Jin; Kang, Hyun Wook; Ko, Seung Hwan; Sung, Hyung Jin

    2013-01-01

    An image processing method for evaluating the quality of nanowire alignment in a microchannel is described. A solution containing nanowires flowing into a microchannel will tend to deposit the nanowires on the bottom surface of the channel via near-wall shear flows. The deposited nanowires generally form complex directional structures along the direction of flow, and the physical properties of these structures depend on the structural morphology, including the alignment quality. A quantitative analysis approach to characterizing the nanowire alignment is needed to estimate the useful features of the nanowire structures. This analysis consists of several image processing methods, including ridge detection, texton analysis and autocorrelation function (ACF) calculation. The ridge detection method improved the ACF by extracting nanowire frames 1–2 pixels in width. Dilation filters were introduced to permit a comparison of the ACF results calculated from different images, regardless of the nanowire orientation. An ACF based on the FFT was then calculated over a square interrogation window. The alignment angle probability distribution was obtained using texton analysis. Monte Carlo simulations of artificially generated images were carried out, and the new algorithm was applied to images collected using two types of microscopy. (paper)

  14. Exclusive processes in QCD

    Mueller, A.H.

    1981-01-01

    In this talk I concentrate on purely exclusive processes. In Sec. II form factors and exclusive decays of heavy quarkonium states will be discussed. In Sec. III elastic wide angle elastic scattering will be considered with emphasis placed on the energy dependence for a fixed angle. The x → 1 limit of structure functions is discussed in Sec. IV. This is a limit which matches on, in a rather complicated way, with transition form factors. In Sec. V the idea of intrinsic charm is considered, mostly from a conceptual viewpoint as to its definition and possible existence. In Sec. VI there is a brief discussion of calculations of matrix elements which occur in deeply inelastic scattering by use of a bag model. In Sec. VII wee parton cancellations and Sudakov corrections for μ-pair production are considered. Sec. VIII concerns soft particle production and the mutliplicity of hadrons in a jet. (orig./HSI)

  15. Superconducting InSb nanowire devices

    Szombati, D.B.

    2017-01-01

    Josephson junctions form a two-level system which is used as a building block for many types of superconducting qubits. Junctions fabricated from semiconducting nanowires are gate-tunable and offer electrostatically adjustable Josephson energy, highly desirable in qubit architecture. Studying

  16. Silicon nanowire hybrid photovoltaics

    Garnett, Erik C.; Peters, Craig; Brongersma, Mark; Cui, Yi; McGehee, Mike

    2010-01-01

    Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

  17. Silicon nanowire hybrid photovoltaics

    Garnett, Erik C.

    2010-06-01

    Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

  18. The evolution and appearance of C3 duplications in fish originate an exclusive teleost c3 gene form with anti-inflammatory activity.

    Gabriel Forn-Cuní

    Full Text Available The complement system acts as a first line of defense and promotes organism homeostasis by modulating the fates of diverse physiological processes. Multiple copies of component genes have been previously identified in fish, suggesting a key role for this system in aquatic organisms. Herein, we confirm the presence of three different previously reported complement c3 genes (c3.1, c3.2, c3.3 and identify five additional c3 genes (c3.4, c3.5, c3.6, c3.7, c3.8 in the zebrafish genome. Additionally, we evaluate the mRNA expression levels of the different c3 genes during ontogeny and in different tissues under steady-state and inflammatory conditions. Furthermore, while reconciling the phylogenetic tree with the fish species tree, we uncovered an event of c3 duplication common to all teleost fishes that gave rise to an exclusive c3 paralog (c3.7 and c3.8. These paralogs showed a distinct ability to regulate neutrophil migration in response to injury compared with the other c3 genes and may play a role in maintaining the balance between inflammatory and homeostatic processes in zebrafish.

  19. Looking into meta-atoms of plasmonic nanowire metamaterial

    Tsai, Kuntong

    2014-09-10

    Nanowire-based plasmonic metamaterials exhibit many intriguing properties related to the hyperbolic dispersion, negative refraction, epsilon-near-zero behavior, strong Purcell effect, and nonlinearities. We have experimentally and numerically studied the electromagnetic modes of individual nanowires (meta-atoms) forming the metamaterial. High-resolution, scattering-type near-field optical microscopy has been used to visualize the intensity and phase of the modes. Numerical and analytical modeling of the mode structure is in agreement with the experimental observations and indicates the presence of the nonlocal response associated with cylindrical surface plasmons of nanowires.

  20. Multiple simultaneous fabrication of molecular nanowires using nanoscale electrocrystallization

    Hasegawa, Hiroyuki; Ueda, Rieko; Kubota, Tohru; Mashiko, Shinro

    2006-01-01

    We carried out a multiple simultaneous fabrication based on the nanoscale electrocrystallization to simultaneously construct molecular nanowires at two or more positions. This substrate-independent nanoscale electrocrystallization process enables nanowires fabrication at specific positions using AC. We also succeeded in multiple fabrications only at each gap between the electrode tips. We found that π-stack was formed along the long axis of the nanowires obtained by analyzing the selected-area electron diffraction. We believe this technique has the potential for expansion to the novel low-cost and energy-saving fabrication of high-performance nanodevices

  1. A universal approach to electrically connecting nanowire arrays using nanoparticles—application to a novel gas sensor architecture

    Parthangal, Prahalad M.; Cavicchi, Richard E.; Zachariah, Michael R.

    2006-08-01

    We report on a novel, in situ approach toward connecting and electrically contacting vertically aligned nanowire arrays using conductive nanoparticles. The utility of the approach is demonstrated by development of a gas sensing device employing this nano-architecture. Well-aligned, single-crystalline zinc oxide nanowires were grown through a direct thermal evaporation process at 550 °C on gold catalyst layers. Electrical contact to the top of the nanowire array was established by creating a contiguous nanoparticle film through electrostatic attachment of conductive gold nanoparticles exclusively onto the tips of nanowires. A gas sensing device was constructed using such an arrangement and the nanowire assembly was found to be sensitive to both reducing (methanol) and oxidizing (nitrous oxides) gases. This assembly approach is amenable to any nanowire array for which a top contact electrode is needed.

  2. A universal approach to electrically connecting nanowire arrays using nanoparticles-application to a novel gas sensor architecture

    Parthangal, Prahalad M; Cavicchi, Richard E; Zachariah, Michael R

    2006-01-01

    We report on a novel, in situ approach toward connecting and electrically contacting vertically aligned nanowire arrays using conductive nanoparticles. The utility of the approach is demonstrated by development of a gas sensing device employing this nano-architecture. Well-aligned, single-crystalline zinc oxide nanowires were grown through a direct thermal evaporation process at 550 deg. C on gold catalyst layers. Electrical contact to the top of the nanowire array was established by creating a contiguous nanoparticle film through electrostatic attachment of conductive gold nanoparticles exclusively onto the tips of nanowires. A gas sensing device was constructed using such an arrangement and the nanowire assembly was found to be sensitive to both reducing (methanol) and oxidizing (nitrous oxides) gases. This assembly approach is amenable to any nanowire array for which a top contact electrode is needed

  3. Nanotubes and nanowires

    Unknown

    junction nanotubes by the pyrolysis of appropriate organic precursors. ... By making use of carbon nanotubes, nanowires of metals, metal ..... The use of activated carbon in place of ..... required for the complete removal of the carbon template.

  4. Porous Silicon Nanowires

    Qu, Yongquan; Zhou, Hailong; Duan, Xiangfeng

    2011-01-01

    In this minreview, we summarize recent progress in the synthesis, properties and applications of a new type of one-dimensional nanostructures — single crystalline porous silicon nanowires. The growth of porous silicon nanowires starting from both p- and n-type Si wafers with a variety of dopant concentrations can be achieved through either one-step or two-step reactions. The mechanistic studies indicate the dopant concentration of Si wafers, oxidizer concentration, etching time and temperature can affect the morphology of the as-etched silicon nanowires. The porous silicon nanowires are both optically and electronically active and have been explored for potential applications in diverse areas including photocatalysis, lithium ion battery, gas sensor and drug delivery. PMID:21869999

  5. The Self- and Directed Assembly of Nanowires

    Smith, Benjamin David

    This thesis explores the self- and directed assembly of nanowires. Specifically, we examine the driving forces behind nanowire self-assembly and the macro-structures that are formed. Particle-dense, oriented nanowire structures show promise in the fields of photonics, energy, sensing, catalysis, and electronics. Arrays of spherical particles have already found uses in electronic inks, sensing arrays, and many other commercial applications; but, it is a challenge to create specific arrays of morphologically and/or compositionally anisotropic particles. The following chapters illuminate the interactions that drive the assembly of anisotropic particles in high density solutions in the absence of applied fields or solution drying. Special emphasis is placed on the structures that are formed. The properties of micro- and nanoparticles and their assembly are introduced in Chapter 1. In particular, the properties of shape and material anisotropic particles are highlighted, while challenges in producing desired arrays are discussed. In this thesis, metallic nanowires of increasing complexity were used to examine the self-assembly behavior of both shape and material anisotropic particles. Nanowires were synthesized through templated electrodeposition. In this process, porous alumina membranes served as a template in which metal salts were reduced to form particles. Upon template dissolution, billions of nominally identical particles were released. We specifically focused on segmented, metallic nanowires 2-13 mum in length and 180 to 350 nm in diameter. Since these particles have strong van der Waals (VDWs) attractions, an electrostatically repulsive coating was necessary to prevent aggregation; we used small molecule, DNA, or amorphous silica coatings. Nanowires and their coatings were characterized by electron microscopy. In order to study self-assembly behavior, particle-dense aqueous suspensions were placed within an assembly chamber defined by a silicone spacer. The

  6. Fabrication of a Silicon Nanowire on a Bulk Substrate by Use of a Plasma Etching and Total Ionizing Dose Effects on a Gate-All-Around Field-Effect Transistor

    Moon, Dong-Il; Han, Jin-Woo; Meyyappan, Meyya

    2016-01-01

    The gate all around transistor is investigated through experiment. The suspended silicon nanowire for the next generation is fabricated on bulk substrate by plasma etching method. The scallop pattern generated by Bosch process is utilized to form a floating silicon nanowire. By combining anisotropic and istropic silicon etch process, the shape of nanowire is accurately controlled. From the suspended nanowire, the gate all around transistor is demonstrated. As the silicon nanowire is fully surrounded by the gate, the device shows excellent electrostatic characteristics.

  7. Surfactant-aided size exclusion chromatography

    Horneman, D.A.; Wolbers, M.; Zomerdijk, M.; Ottens, M.; Keurentjes, J.T.F.; Wielen, van der L.A.M.

    2004-01-01

    The flexibility and selectivity of size exclusion chromatog. (SEC) for protein purifn. can be modified by adding non-ionic micelle-forming surfactants to the mobile phase. The micelles exclude proteins from a liq. phase similar to the exclusion effect of the polymer fibers of the size exclusion

  8. Biofunctionalized Magnetic Nanowires

    Kosel, Jurgen

    2013-12-19

    Magnetic nanowires can be used as an alternative method overcoming the limitations of current cancer treatments that lack specificity and are highly cytotoxic. Nanowires are developed so that they selectively attach to cancer cells via antibodies, potentially destroying them when a magnetic field induces their vibration. This will transmit a mechanical force to the targeted cells, which is expected to induce apoptosis on the cancer cells.

  9. Biofunctionalized Magnetic Nanowires

    Kosel, Jü rgen; Ravasi, Timothy; Contreras Gerenas, Maria Fernanda

    2013-01-01

    Magnetic nanowires can be used as an alternative method overcoming the limitations of current cancer treatments that lack specificity and are highly cytotoxic. Nanowires are developed so that they selectively attach to cancer cells via antibodies, potentially destroying them when a magnetic field induces their vibration. This will transmit a mechanical force to the targeted cells, which is expected to induce apoptosis on the cancer cells.

  10. Synthesis of high aspect ratio ZnO nanowires with an inexpensive handcrafted electrochemical setup

    Taheri, Ali, E-mail: at1361@aut.ac.ir, E-mail: atahery@aeoi.org.ir [Nuclear Science and Technology Institute (Iran, Islamic Republic of); Saramad, Shahyar; Setayeshi, Saeed [Amirkabir University of Technology, Faculty of Energy Engineering and Physics (Iran, Islamic Republic of)

    2016-12-15

    In this work, high aspect ratio zinc oxide nanowires are synthesized using templated one-step electrodeposition technique. Electrodeposition of the nanowires is done using a handcrafted electronic system. Nuclear track-etched polycarbonate membrane is used as a template to form the high aspect ratio nanowires. The result of X-ray diffraction and scanning electron microscopy shows that nanowires with a good crystallinity and an aspect ratio of more than 30 can be achieved in a suitable condition. The height of electrodeposited nanowires reaches to about 11 μm. Based on the obtained results, high aspect ratio ZnO nanowires can be formed using inexpensive electrodeposition setup with an acceptable quality.

  11. Problems of Chernobyl Exclusion Zone

    Kholosha, V.Yi.

    2014-01-01

    The collection comprises the results of researches and design activity in the ChNPP exclusion zone, aimed at the development of technologies, equipment and devices for radioactive waste management and ChNPP accident clean-up, at studying the composition and structure of the Exclusion zone soil activity solid bearers, form transformation of the fission products of fuel fallout radionuclide composition in the ChNPP near zone, the spatial distribution of radionuclides and other radioecological issues.. Much attention is paid to medical and biological aspects of the accident influence on the flora, fauna and people's health, labour conditions and incidence of the workers of the Exclusion zone

  12. Customization of Protein Single Nanowires for Optical Biosensing.

    Sun, Yun-Lu; Sun, Si-Ming; Wang, Pan; Dong, Wen-Fei; Zhang, Lei; Xu, Bin-Bin; Chen, Qi-Dai; Tong, Li-Min; Sun, Hong-Bo

    2015-06-24

    An all-protein single-nanowire optical biosensor is constructed by a facile and general femtosecond laser direct writing approach with nanoscale structural customization. As-formed protein single nanowires show excellent optical properties (fine waveguiding performance and bio-applicable transmission windows), and are utilized as evanescent optical nanobiosensors for label-free biotin detection. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Two-dimensional nanowires on homoepitaxial interfaces: Atomic-scale mechanism of breakdown and disintegration

    Michailov, Michail; Ranguelov, Bogdan

    2018-03-01

    We present a model for hole-mediated spontaneous breakdown of ahomoepitaxial two-dimensional (2D) flat nanowire based exclusively on random, thermally-activated motion of atoms. The model suggests a consecutive three-step mechanism driving the rupture and complete disintegration of the nanowire on a crystalline surface. The breakdown scenario includes: (i) local narrowing of a part of the stripe to a monatomic chain, (ii) formation of a recoverable single vacancy or a 2D vacancy cluster that causes temporary nanowire rupture, (iii) formation of a non-recoverable 2D hole leading to permanent nanowire breakdown. These successive events in the temporal evolution of the nanowire morphology bring the nanowire stripe into an irreversible unstable state, leading to a dramatic change in its peculiar physical properties and conductivity. The atomistic simulations also reveal a strong increase of the nanowire lifetime with an enlargement of its width and open up a way for a fine atomic-scale control of the nanowire lifetime and structural, morphological and thermodynamic stability.

  14. Orientation-controlled synthesis and magnetism of single crystalline Co nanowires

    Huang, Gui-Fang; Huang, Wei-Qing; Wang, Ling-Ling; Zou, B.S.; Pan, Anlian

    2012-01-01

    Orientation control and the magnetic properties of single crystalline Co nanowires fabricated by electrodeposition have been systematically investigated. It is found that the orientation of Co nanowires can be effectively controlled by varying either the current density or the pore diameter of AAO templates. Lower current density or small diameter is favorable for forming the (1 0 0) texture, while higher current values or larger diameter leads to the emergence and enhancement of (1 1 0) texture of Co nanowires. The mechanism for the manipulated growth characterization is discussed in detail. The orientation of Co nanowires has a significant influence on the magnetic properties, resulting from the competition between the magneto-crystalline and shape anisotropy of Co nanowires. This work offers a simple method to manipulate the orientation and magnetic properties of nanowires for future applications. - Highlights: ► Single crystalline Co nanowires have successfully been grown by DC electrodeposition. ► Orientation controlling and its effect on magnetism of Co nanowires were investigated. ► The orientation of Co nanowires can be effectively controlled by varying current density. ► The crystalline orientation of Co nanowires has significant influence on the magnetic properties.

  15. Exclusion of the GNAS locus in PHP-Ib patients with broad GNAS methylation changes: evidence for an autosomal recessive form of PHP-Ib?

    Fernández-Rebollo, Eduardo; Pérez de Nanclares, Guiomar; Lecumberri, Beatriz; Turan, Serap; Anda, Emma; Pérez-Nanclares, Gustavo; Feig, Denice; Nik-Zainal, Serena; Bastepe, Murat; Jüppner, Harald

    2011-08-01

    Most patients with autosomal dominant pseudohypoparathyroidism type Ib (AD-PHP-Ib) carry maternally inherited microdeletions upstream of GNAS that are associated with loss of methylation restricted to GNAS exon A/B. Only few AD-PHP-Ib patients carry microdeletions within GNAS that are associated with loss of all maternal methylation imprints. These epigenetic changes are often indistinguishable from those observed in patients affected by an apparently sporadic PHP-Ib form that has not yet been defined genetically. We have now investigated six female patients affected by PHP-Ib (four unrelated and two sisters) with complete or almost complete loss of GNAS methylation, whose healthy children (11 in total) showed no epigenetic changes at this locus. Analysis of several microsatellite markers throughout the 20q13 region made it unlikely that PHP-Ib is caused in these patients by large deletions involving GNAS or by paternal uniparental isodisomy or heterodisomy of chromosome 20 (patUPD20). Microsatellite and single-nucleotide variation (SNV) data revealed that the two affected sisters share their maternally inherited GNAS alleles with unaffected relatives that lack evidence for abnormal GNAS methylation, thus excluding linkage to this locus. Consistent with these findings, healthy children of two unrelated sporadic PHP-Ib patients had inherited different maternal GNAS alleles, also arguing against linkage to this locus. Based on our data, it appears plausible that some forms of PHP-Ib are caused by homozygous or compound heterozygous mutation(s) in an unknown gene involved in establishing or maintaining GNAS methylation. Copyright © 2011 American Society for Bone and Mineral Research.

  16. Strain analysis of nanowire interfaces in multiscale composites

    Malakooti, Mohammad H.; Zhou, Zhi; Spears, John H.; Shankwitz, Timothy J.; Sodano, Henry A.

    2016-04-01

    Recently, the reinforcement-matrix interface of fiber reinforced polymers has been modified through grafting nanostructures - particularly carbon nanotubes and ZnO nanowires - on to the fiber surface. This type of interface engineering has made a great impact on the development of multiscale composites that have high stiffness, interfacial strength, toughness, and vibrational damping - qualities that are mutually exclusive to a degree in most raw materials. Although the efficacy of such nanostructured interfaces has been established, the reinforcement mechanisms of these multiscale composites have not been explored. Here, strain transfer across a nanowire interphase is studied in order to gain a heightened understanding of the working principles of physical interface modification and the formation of a functional gradient. This problem is studied using a functionally graded piezoelectric interface composed of vertically aligned lead zirconate titanate nanowires, as their piezoelectric properties can be utilized to precisely control the strain on one side of the interface. The displacement and strain across the nanowire interface is captured using digital image correlation. It is demonstrated that the material gradient created through nanowires cause a smooth strain transfer from reinforcement phase into matrix phase that eliminates the stress concentration between these phases, which have highly mismatched elasticity.

  17. The yield of DNA double strand breaks determined after exclusion of those forming from heat-labile lesions predicts tumor cell radiosensitivity to killing.

    Cheng, Yanlei; Li, Fanghua; Mladenov, Emil; Iliakis, George

    2015-09-01

    The radiosensitivity to killing of tumor cells and in-field normal tissue are key determinants of radiotherapy response. In vitro radiosensitivity of tumor- and normal-tissue-derived cells often predicts radiation response, but high determination cost in time and resources compromise utility as routine response-predictor. Efforts to use induction or repair of DNA double-strand-breaks (DSBs) as surrogate-predictors of cell radiosensitivity to killing have met with limited success. Here, we re-visit this issue encouraged by our recent observations that ionizing radiation (IR) induces not only promptly-forming DSBs (prDSBs), but also DSBs developing after irradiation from the conversion to breaks of thermally-labile sugar-lesions (tlDSBs). We employ pulsed-field gel-electrophoresis and flow-cytometry protocols to measure total DSBs (tDSB=prDSB+tlDSBs) and prDSBs, as well as γH2AX and parameters of chromatin structure. We report a fully unexpected and in many ways unprecedented correlation between yield of prDSBs and radiosensitivity to killing in a battery of ten tumor cell lines that is not matched by yields of tDSBs or γH2AX, and cannot be explained by simple parameters of chromatin structure. We propose the introduction of prDSBs-yield as a novel and powerful surrogate-predictor of cell radiosensitivity to killing with potential for clinical application. Copyright © 2015 Elsevier Ireland Ltd. All rights reserved.

  18. Metal nanogrids, nanowires, and nanofibers for transparent electrodes

    Hu, Liangbing; Wu, Hui; Cui, Yi

    2011-01-01

    Metals possess the highest conductivity among all room-temperature materials; however, ultrathin metal films demonstrate decent optical transparency but poor sheet conductance due to electron scattering from the surface and grain boundaries. This article discusses engineered metal nanostructures in the form of nanogrids, nanowires, or continuous nanofibers as efficient transparent and conductive electrodes. Metal nanogrids are discussed, as they represent an excellent platform for understanding the fundamental science. Progress toward low-cost, nano-ink-based printed silver nanowire electrodes, including silver nanowire synthesis, film fabrication, wire-wire junction resistance, optoelectronic properties, and stability, are also discussed. Another important factor for low-cost application is to use earth-abundant materials. Copper-based nanowires and nanofibers are discussed in this context. Examples of device integrations of these materials are also given. Such metal nanostructure-based transparent electrodes are particularly attractive for solar cell applications. © 2011 Materials Research Society.

  19. Metal nanogrids, nanowires, and nanofibers for transparent electrodes

    Hu, Liangbing

    2011-10-01

    Metals possess the highest conductivity among all room-temperature materials; however, ultrathin metal films demonstrate decent optical transparency but poor sheet conductance due to electron scattering from the surface and grain boundaries. This article discusses engineered metal nanostructures in the form of nanogrids, nanowires, or continuous nanofibers as efficient transparent and conductive electrodes. Metal nanogrids are discussed, as they represent an excellent platform for understanding the fundamental science. Progress toward low-cost, nano-ink-based printed silver nanowire electrodes, including silver nanowire synthesis, film fabrication, wire-wire junction resistance, optoelectronic properties, and stability, are also discussed. Another important factor for low-cost application is to use earth-abundant materials. Copper-based nanowires and nanofibers are discussed in this context. Examples of device integrations of these materials are also given. Such metal nanostructure-based transparent electrodes are particularly attractive for solar cell applications. © 2011 Materials Research Society.

  20. Integration, gap formation, and sharpening of III-V heterostructure nanowires by selective etching

    Kallesoe, C.; Mølhave, Kristian; Larsen, K. F.

    2010-01-01

    Epitaxial growth of heterostructure nanowires allows for the definition of narrow sections with specific semiconductor composition. The authors demonstrate how postgrowth engineering of III-V heterostructure nanowires using selective etching can form gaps, sharpening of tips, and thin sections...... lithography is used for deposition of catalyst particles on trench sidewalls and the lateral growth of III-V nanowires is achieved from such catalysts. The selectivity of a bromine-based etch on gallium arsenide segments in gallium phosphide nanowires is examined, using a hydrochloride etch to remove the III...

  1. Facile synthesis of polypyrrole nanowires for high-performance supercapacitor electrode materials

    Zhao, Junhong; Wu, Jinping; Li, Bing; Du, Weimin; Huang, Qingli; Zheng, Mingbo; Xue, Huaiguo; Pang, Huan

    2016-01-01

    Polypyrrole nanowires are facile synthesized under a mild condition with FeCl3 as an oxidant. Polypyrrole nanowires with the width of 120 nm form many nanogaps or pores due to the intertwined nanostructures. More importantly, PPy nanowires were further applied for supercapacitor electrode materials. After electrochemical testing, it was observed that the PPy nanowire based electrode showed a large specific capacitance (420 F g−1, 1.5 A g−1) and good rate capability (272 F g−1, 18.0 A g−1), wh...

  2. As-Grown Gallium Nitride Nanowire Electromechanical Resonators

    Montague, Joshua R.

    Technological development in recent years has led to a ubiquity of micro- and nano-scale electromechanical devices. Sensors for monitoring temperature, pressure, mass, etc., are now found in nearly all electronic devices at both the industrial and consumer levels. As has been true for integrated circuit electronics, these electromechanical devices have continued to be scaled down in size. For many nanometer-scale structures with large surface-to-volume ratio, dissipation (energy loss) becomes prohibitively large causing a decreasing sensitivity with decreasing sensor size. In this work, gallium nitride (GaN) nanowires are investigated as singly-clamped (cantilever) mechanical resonators with typical mechanical quality factors, Q (equal to the ratio of resonance frequency to peak full-width-at-half-maximum-power) and resonance frequencies, respectively, at or above 30,000, and near 1 MHz. These Q values---in vacuum at room temperature---indicate very low levels of dissipation; they are essentially the same as those for bulk quartz crystal resonators that form the basis of simple clocks and mass sensors. The GaN nanowires have lengths and diameters, respectively, of approximately 15 micrometers and hundreds of nanometers. As-grown GaN nanowire Q values are larger than other similarly-sized, bottom-up, cantilever resonators and this property makes them very attractive for use as resonant sensors. We demonstrate the capability of detecting sub-monolayer levels of atomic layer deposited (ALD) films, and the robust nature of the GaN nanowires structure that allows for their 'reuse' after removal of such layers. In addition to electron microscope-based measurement techniques, we demonstrate the successful capacitive detection of a single nanowire using microwave homodyne reflectometry. This technique is then extended to allow for simultaneous measurements of large ensembles of GaN nanowires on a single sample, providing statistical information about the distribution of

  3. Growth Mechanism of Nanowires: Binary and Ternary Chalcogenides

    Singh, N. B.; Coriell, S. R.; Su, Ching-Hua; Hopkins, R. H.; Arnold, B.; Choa, Fow-Sen; Cullum, Brian

    2016-01-01

    Semiconductor nanowires exhibit very exciting optical and electrical properties including high transparency and a several order of magnitude better photocurrent than thin film and bulk materials. We present here the mechanism of nanowire growth from the melt-liquid-vapor medium. We describe preliminary results of binary and ternary selenide materials in light of recent theories. Experiments were performed with lead selenide and thallium arsenic selenide systems which are multifunctional material and have been used for detectors, acousto-optical, nonlinear and radiation detection applications. We observed that small units of nanocubes and elongated nanoparticles arrange and rearrange at moderate melt undercooling to form the building block of a nanowire. Since we avoided the catalyst, we observed self-nucleation and uncontrolled growth of wires from different places. Growth of lead selenide nanowires was performed by physical vapor transport method and thallium arsenic selenide nanowire by vapor-liquid-solid (VLS) method. In some cases very long wires (>mm) are formed. To achieve this goal experiments were performed to create situation where nanowires grew on the surface of solid thallium arsenic selenide itself.

  4. Investigation of the influence of growth parameters on self-catalyzed ITO nanowires by high RF-power sputtering

    Li, Qiang; Zhang, Yuantao; Feng, Lungang; Wang, Zuming; Wang, Tao; Yun, Feng

    2018-04-01

    Tin-doped indium oxide (ITO) nanowires are successfully fabricated using a radio frequency (RF) sputtering technique with a high RF power of 250 W. The fabrication of the ITO nanowires is optimized through the study of oxygen flow rates, temperatures and RF power. The difference in the morphology of the ITO nanowires prepared by using a new target and a used target is observed and the mechanism for the difference is discussed in detail. A hollow structure and air voids within the nanowires are formed during the process of the nanowire growth. The ITO nanowires fabricated by this method demonstrated good conductivity (15 Ω sq-1) and a transmittance of more than 64% at a wavelength longer than 550 nm after annealing. Furthermore, detailed microstructure studies show that the ITO nanowires exhibit a large number of oxygen vacancies. As a result, it is expected that they can be useful for the fabrication of gas sensor devices.

  5. Topological Insulator Nanowires and Nanoribbons

    Kong, Desheng

    2010-01-13

    Recent theoretical calculations and photoemission spectroscopy measurements on the bulk Bi2Se3 material show that it is a three-dimensional topological insulator possessing conductive surface states with nondegenerate spins, attractive for dissipationless electronics and spintronics applications. Nanoscale topological insulator materials have a large surface-to-volume ratio that can manifest the conductive surface states and are promising candidates for devices. Here we report the synthesis and characterization of high quality single crystalline Bi2Se5 nanomaterials with a variety of morphologies. The synthesis of Bi 2Se5 nanowires and nanoribbons employs Au-catalyzed vapor-liquid-solid (VLS) mechanism. Nanowires, which exhibit rough surfaces, are formed by stacking nanoplatelets along the axial direction of the wires. Nanoribbons are grown along [1120] direction with a rectangular cross-section and have diverse morphologies, including quasi-one-dimensional, sheetlike, zigzag and sawtooth shapes. Scanning tunneling microscopy (STM) studies on nanoribbons show atomically smooth surfaces with ∼ 1 nm step edges, indicating single Se-Bi-Se-Bi-Se quintuple layers. STM measurements reveal a honeycomb atomic lattice, suggesting that the STM tip couples not only to the top Se atomic layer, but also to the Bi atomic layer underneath, which opens up the possibility to investigate the contribution of different atomic orbitais to the topological surface states. Transport measurements of a single nanoribbon device (four terminal resistance and Hall resistance) show great promise for nanoribbons as candidates to study topological surface states. © 2010 American Chemical Society.

  6. EDITORIAL: Nanowires for energy Nanowires for energy

    LaPierre, Ray; Sunkara, Mahendra

    2012-05-01

    This special issue of Nanotechnology focuses on studies illustrating the application of nanowires for energy including solar cells, efficient lighting and water splitting. Over the next three decades, nanotechnology will make significant contributions towards meeting the increased energy needs of the planet, now known as the TeraWatt challenge. Nanowires in particular are poised to contribute significantly in this development as presented in the review by Hiralal et al [1]. Nanowires exhibit light trapping properties that can act as a broadband anti-reflection coating to enhance the efficiency of solar cells. In this issue, Li et al [2] and Wang et al [3] present the optical properties of silicon nanowire and nanocone arrays. In addition to enhanced optical properties, core-shell nanowires also have the potential for efficient charge carrier collection across the nanowire diameter as presented in the contribution by Yu et al [4] for radial junction a-Si solar cells. Hybrid approaches that combine organic and inorganic materials also have potential for high efficiency photovoltaics. A Si-based hybrid solar cell is presented by Zhang et al [5] with a photoconversion efficiency of over 7%. The quintessential example of hybrid solar cells is the dye-sensitized solar cell (DSSC) where an organic absorber (dye) coats an inorganic material (typically a ZnO nanostructure). Herman et al [6] present a method of enhancing the efficiency of a DSSC by increasing the hetero-interfacial area with a unique hierarchical weeping willow ZnO structure. The increased surface area allows for higher dye loading, light harvesting, and reduced charge recombination through direct conduction along the ZnO branches. Another unique ZnO growth method is presented by Calestani et al [7] using a solution-free and catalyst-free approach by pulsed electron deposition (PED). Nanowires can also make more efficient use of electrical power. Light emitting diodes, for example, will eventually become the

  7. An ultrabright and monochromatic electron point source made of a LaB6 nanowire

    Zhang, Han; Tang, Jie; Yuan, Jinshi; Yamauchi, Yasushi; Suzuki, Taku T.; Shinya, Norio; Nakajima, Kiyomi; Qin, Lu-Chang

    2016-03-01

    Electron sources in the form of one-dimensional nanotubes and nanowires are an essential tool for investigations in a variety of fields, such as X-ray computed tomography, flexible displays, chemical sensors and electron optics applications. However, field emission instability and the need to work under high-vacuum or high-temperature conditions have imposed stringent requirements that are currently limiting the range of application of electron sources. Here we report the fabrication of a LaB6 nanowire with only a few La atoms bonded on the tip that emits collimated electrons from a single point with high monochromaticity. The nanostructured tip has a low work function of 2.07 eV (lower than that of Cs) while remaining chemically inert, two properties usually regarded as mutually exclusive. Installed in a scanning electron microscope (SEM) field emission gun, our tip shows a current density gain that is about 1,000 times greater than that achievable with W(310) tips, and no emission decay for tens of hours of operation. Using this new SEM, we acquired very low-noise, high-resolution images together with rapid chemical compositional mapping using a tip operated at room temperature and at 10-times higher residual gas pressure than that required for W tips.

  8. Dimensional effects in semiconductor nanowires; Dimensionseffekte in Halbleiternanodraehten

    Stichtenoth, Daniel

    2008-06-23

    Nanomaterials show new physical properties, which are determined by their size and morphology. These new properties can be ascribed to the higher surface to volume ratio, to quantum size effects or to a form anisotropy. They may enable new technologies. The nanowires studied in this work have a diameter of 4 to 400 nm and a length up to 100 {mu}m. The semiconductor material used is mainly zinc oxide (ZnO), zinc sulfide (ZnS) and gallium arsenide (GaAs). All nanowires were synthesized according to the vapor liquid solid mechanism, which was originally postulated for the growth of silicon whiskers. Respective modifications for the growth of compound semiconductor nanowires are discussed. Detailed luminescence studies on ZnO nanowires with different diameters show pronounced size effects which can be attributed to the origins given above. Similar to bulk material, a tuning of the material properties is often essential for a further functionalization of the nanowires. This is typical realized by doping the source material. It becomes apparent, that a controlled doping of nanowires during the growth process is not successful. Here an alternative method is chosen: the doping after the growth by ion implantation. However, the doping by ion implantation goes always along with the creation of crystal defects. The defects have to be annihilated in order to reach an activation of th introduced dopants. At high ion fluences and ion masses the sputtering of surface atoms becomes more important. This results in a characteristic change in the morphology of the nanowires. In detail, the doping of ZnO and ZnS nanowires with color centers (manganese and rare earth elements) is demonstrated. Especially, the intra 3d luminescence of manganese implanted ZnS nanostructures shows a strong dependence of the nanowire diameter and morphology. This dependence can be described by expanding Foersters model (which describes an energy transfer to the color centers) by a dimensional parameter

  9. Superluminescent light emitting diodes on naturally survived InGaN/GaN lateral nanowires

    Banerjee, D.; Sankaranarayanan, S.; Khachariya, D.; Nadar, M. B.; Ganguly, S.; Saha, D., E-mail: dipankarsaha@iitb.ac.in [Applied Quantum Mechanics Laboratory, Centre of Excellence in Nanoelectronics, Indian Institute of Technology Bombay, Powai, Mumbai 400076 (India)

    2016-07-18

    We demonstrate a method for nanowire formation by natural selection during wet anisotropic chemical etching in boiling phosphoric acid. Nanowires of sub-10 nm lateral dimensions and lengths of 700 nm or more are naturally formed during the wet etching due to the convergence of the nearby crystallographic hexagonal etch pits. These nanowires are site controlled when formed in augmentation with dry etching. Temperature and power dependent photoluminescence characterizations confirm excitonic transitions up to room temperature. The exciton confinement is enhanced by using two-dimensional confinement whereby enforcing greater overlap of the electron-hole wave-functions. The surviving nanowires have less defects and a small temperature variation of the output electroluminescent light. We have observed superluminescent behaviour of the light emitting diodes formed on these nanowires. There is no observable efficiency roll off for current densities up to 400 A/cm{sup 2}.

  10. Carbon−Silicon Core−Shell Nanowires as High Capacity Electrode for Lithium Ion Batteries

    Cui, Li-Feng; Yang, Yuan; Hsu, Ching-Mei; Cui, Yi

    2009-01-01

    We introduce a novel design of carbon-silicon core-shell nanowires for high power and long life lithium battery electrodes. Amorphous silicon was coated onto carbon nanofibers to form a core-shell structure and the resulted core-shell nanowires

  11. Superwetting nanowire membranes for selective absorption.

    Yuan, Jikang; Liu, Xiaogang; Akbulut, Ozge; Hu, Junqing; Suib, Steven L; Kong, Jing; Stellacci, Francesco

    2008-06-01

    The construction of nanoporous membranes is of great technological importance for various applications, including catalyst supports, filters for biomolecule purification, environmental remediation and seawater desalination. A major challenge is the scalable fabrication of membranes with the desirable combination of good thermal stability, high selectivity and excellent recyclability. Here we present a self-assembly method for constructing thermally stable, free-standing nanowire membranes that exhibit controlled wetting behaviour ranging from superhydrophilic to superhydrophobic. These membranes can selectively absorb oils up to 20 times the material's weight in preference to water, through a combination of superhydrophobicity and capillary action. Moreover, the nanowires that form the membrane structure can be re-suspended in solutions and subsequently re-form the original paper-like morphology over many cycles. Our results suggest an innovative material that should find practical applications in the removal of organics, particularly in the field of oil spill cleanup.

  12. Exclusion and authorization

    Cooper, J.R.

    2003-01-01

    'Everyone in the world is exposed to radiation from natural and artificial sources. Any realistic system of radiological protection must have a clearly defined scope if it is not to apply to the whole of mankind's activities'. This quote, from ICRP Publication 60 (ICRP, 1991), remains apposite. The main tool for defining scope is the concept of exclusion: situations, sources or exposures that are excluded from the system of radiological protection are, to all intents and purposes, ignored. Sources and exposures that are not excluded are within the scope of the system of protection and by inference within regulatory systems implementing ICRP recommendations. These sources and exposures should be subject to appropriate authorization by the relevant regulatory authority. In order to avoid excessive regulatory procedures, however, provisions should be made for granting an exemption in cases where it is clear that regulatory provisions are unnecessary. Exemption is a regulatory tool intended to facilitate efficient use of regulatory resources. Nevertheless, the regulatory act of granting exemptions is, in itself, a form of authorization and the material or situation so exempted remains within the regulatory system. This distinction between exclusion and exemption is an important one. Historically, the concept of exclusion has been applied to sources or exposures that are essentially unamenable to control because of their widespread nature. The usually quoted examples are cosmic radiation at ground level and 40 K in the body. Clearly, many exposures from natural sources could fall into this category. The challenges are firstly to establish a sound basis for deciding which should be excluded and which should be controlled, and secondly to see if the concept could or should be applied to artificial sources and exposures. These two questions are the subject of this paper. (author)

  13. Lasing in robust cesium lead halide perovskite nanowires

    Eaton, Samuel W.; Lai, Minliang; Gibson, Natalie A.; Wong, Andrew B.; Dou, Letian; Ma, Jie; Wang, Lin-Wang; Leone, Stephen R.; Yang, Peidong

    2016-01-01

    The rapidly growing field of nanoscale lasers can be advanced through the discovery of new, tunable light sources. The emission wavelength tunability demonstrated in perovskite materials is an attractive property for nanoscale lasers. Whereas organic–inorganic lead halide perovskite materials are known for their instability, cesium lead halides offer a robust alternative without sacrificing emission tunability or ease of synthesis. Here, we report the low-temperature, solution-phase growth of cesium lead halide nanowires exhibiting low-threshold lasing and high stability. The as-grown nanowires are single crystalline with well-formed facets, and act as high-quality laser cavities. The nanowires display excellent stability while stored and handled under ambient conditions over the course of weeks. Upon optical excitation, Fabry–Pérot lasing occurs in CsPbBr3 nanowires with an onset of 5 μJ cm−2 with the nanowire cavity displaying a maximum quality factor of 1,009 ± 5. Lasing under constant, pulsed excitation can be maintained for over 1 h, the equivalent of 109 excitation cycles, and lasing persists upon exposure to ambient atmosphere. Wavelength tunability in the green and blue regions of the spectrum in conjunction with excellent stability makes these nanowire lasers attractive for device fabrication. PMID:26862172

  14. Co-percolation to tune conductive behaviour in dynamical metallic nanowire networks.

    Fairfield, J A; Rocha, C G; O'Callaghan, C; Ferreira, M S; Boland, J J

    2016-11-03

    Nanowire networks act as self-healing smart materials, whose sheet resistance can be tuned via an externally applied voltage stimulus. This memristive response occurs due to modification of junction resistances to form a connectivity path across the lowest barrier junctions in the network. While most network studies have been performed on expensive noble metal nanowires like silver, networks of inexpensive nickel nanowires with a nickel oxide coating can also demonstrate resistive switching, a common feature of metal oxides with filamentary conduction. However, networks made from solely nickel nanowires have high operation voltages which prohibit large-scale material applications. Here we show, using both experiment and simulation, that a heterogeneous network of nickel and silver nanowires allows optimization of the activation voltage, as well as tuning of the conduction behavior to be either resistive switching, memristive, or a combination of both. Small percentages of silver nanowires, below the percolation threshold, induce these changes in electrical behaviour, even for low area coverage and hence very transparent films. Silver nanowires act as current concentrators, amplifying conductivity locally as shown in our computational dynamical activation framework for networks of junctions. These results demonstrate that a heterogeneous nanowire network can act as a cost-effective adaptive material with minimal use of noble metal nanowires, without losing memristive behaviour that is essential for smart sensing and neuromorphic applications.

  15. Template-assisted fabrication of tin and antimony based nanowire arrays

    Zaraska, Leszek; Kurowska, Elżbieta; Sulka, Grzegorz D.; Jaskuła, Marian

    2012-10-01

    Antimony nanowires with diameters ranging from 35 nm to 320 nm were successfully prepared by simple, galvanostatic electrodeposition inside the pores of anodic alumina membranes from a citrate based electrolyte. The use of the potassium antimonyl tartrate electrolyte for electrodeposition results in the formation of Sb/Sb2O3 nanowires. The structural features of the nanowire arrays were investigated by FE-SEM, and the nanowire composition was confirmed by EDS and XRD measurements. A distinct peak at about 27.5° in the XRD pattern recorded for nanowires formed in the tartrate electrolyte was attributed to the presence of co-deposited Sb2O3. Three types of dense arrays of Sn-SnSb nanowires with diameters ranging from 82 nm to 325 nm were also synthesized by DC galvanostatic electrodeposition into the anodic aluminum oxide (AAO) membranes for the first time. Only Sn and SnSb peaks appeared in the XRD pattern and both phases seem to have a relatively high degree of crystallinity. The influence of current density applied during electrodeposition on the composition of nanowires was investigated. It was found that the Sb content in fabricated nanowires decreases with increasing current density. The diameters of all synthesized nanowires roughly correspond to the dimensions of the nanochannels of AAO templates used for electrodeposition.

  16. Directional Charge Separation in Isolated Organic Semiconductor Crystalline Nanowires

    Barnes, Michael; Labastide, Joelle; Bond-Thompson, Hilary; Briseno, Alejandro; Collela, Nicolas

    2017-03-01

    In the conventional view of organic photovoltaics (OPV), localized electronic excitations (excitons) formed in the active layer are transported by random 3D diffusion to an interface where charge separation and extraction take place. Because radiative de-excitation is usually strongly allowed in organic semiconductors, efficient charge separation requires high exciton mobility, with much of the diffusive motion ‘wasted’ in directions that don’t result in an interface encounter. Our research efforts are focused on ways to enforce a preferred directionality in energy and/or charge transport using ordered crystalline nanowires in which the intermolecular interactions that facilitate transport along, for example, the pi-stacking axis, can be made several orders of magnitude stronger than those in a transverse direction. The results presented in our recent work (Nature Communications) is a first step towards realizing the goal of directional control of both energy transport and charge separation, where excitons shared between adjacent molecules dissociate exclusively along the pi-stacking direction.

  17. Exclusive processes in quantum chromodynamics

    Brodsky, S.J.; Lepage, G.P.

    1981-06-01

    Large momentum transfer exclusive processes and the short distance structure of hadronic wave functions can be systematically analyzed within the context of perturbative QCD. Predictions for meson form factors, two-photon processes γγ → M anti M, hadronic decays of heavy quark systems, and a number of other related QCD phenomena are reviewed

  18. Magnetic Nanowires as Materials for Cancer Cell Destruction

    Contreras, Maria F.

    2015-12-01

    Current cancer therapies are highly cytotoxic and their delivery to exclusively the affected site is poorly controlled, resulting in unavoidable and often severe side effects. In an effort to overcome such issues, magnetic nanoparticles have been recently gaining relevance in the areas of biomedical applications and therapeutics, opening pathways to alternative methods. This led to the concept of magnetic particle hyperthermia in which magnetic nano beads are heated by a high power magnetic field. The increase in temperature kills the cancer cells, which are more susceptible to heat in comparison to healthy cells. In this dissertation, the possibility to kill cancer cells with magnetic nanowires is evaluated. The idea is to exploit a magnetomechanical effect, where nanowires cause cancer cell death through vibrating in a low power magnetic field. Specifically, the magnetic nanowires effects to cells in culture and their ability to induce cancer cell death, when combined with an alternating magnetic field, was investigated. Nickel and iron nanowires of 35 nm diameter and 1 to 5 μm long were synthesized by electrodeposition into nanoporous alumina templates, which were prepared using a two-step anodization process on highly pure aluminum substrates. For the cytotoxicity studies, the nanowires were added to cancer cells in culture, varying the incubation time and the concentration. The cell-nanowire interaction was thoroughly studied at the cellular level (mitochondrial metabolic activity, cell membrane integrity and, apoptosis/necrosis assay), and optical level (transmission electron and confocal microscopy). Furthermore, to investigate their therapeutic potential, an alternating magnetic field was applied varying its intensity and frequency. After the magnetic field application, cells health was measured at the mitochondrial activity level. Cytotoxicity results shed light onto the cellular tolerance to the nanowires, which helped in establishing the appropriate

  19. Optical emission of InAs nanowires

    Möller, M; De Lima Jr, M M; Cantarero, A; Chiaramonte, T; Cotta, M A; Iikawa, F

    2012-01-01

    Wurtzite InAs nanowire samples grown by chemical beam epitaxy have been analyzed by photoluminescence spectroscopy. The nanowires exhibit two main optical emission bands at low temperatures. They are attributed to the recombination of carriers in quantum well structures, formed by zincblende–wurtzite alternating layers, and to the donor–acceptor pair. The blue-shift observed in the former emission band when the excitation power is increased is in good agreement with the type-II band alignment between the wurtzite and zincblende sections predicted by previous theoretical works. When increasing the temperature and the excitation power successively, an additional band attributed to the band-to-band recombination from wurtzite InAs appears. We estimated a lower bound for the wurtzite band gap energy of approximately 0.46 eV at low temperature. (paper)

  20. Optical emission of InAs nanowires

    Möller, M.; de Lima, M. M., Jr.; Cantarero, A.; Chiaramonte, T.; Cotta, M. A.; Iikawa, F.

    2012-09-01

    Wurtzite InAs nanowire samples grown by chemical beam epitaxy have been analyzed by photoluminescence spectroscopy. The nanowires exhibit two main optical emission bands at low temperatures. They are attributed to the recombination of carriers in quantum well structures, formed by zincblende-wurtzite alternating layers, and to the donor-acceptor pair. The blue-shift observed in the former emission band when the excitation power is increased is in good agreement with the type-II band alignment between the wurtzite and zincblende sections predicted by previous theoretical works. When increasing the temperature and the excitation power successively, an additional band attributed to the band-to-band recombination from wurtzite InAs appears. We estimated a lower bound for the wurtzite band gap energy of approximately 0.46 eV at low temperature.

  1. Hard exclusive QCD processes

    Kugler, W.

    2007-01-15

    Hard exclusive processes in high energy electron proton scattering offer the opportunity to get access to a new generation of parton distributions, the so-called generalized parton distributions (GPDs). This functions provide more detailed informations about the structure of the nucleon than the usual PDFs obtained from DIS. In this work we present a detailed analysis of exclusive processes, especially of hard exclusive meson production. We investigated the influence of exclusive produced mesons on the semi-inclusive production of mesons at fixed target experiments like HERMES. Further we give a detailed analysis of higher order corrections (NLO) for the exclusive production of mesons in a very broad range of kinematics. (orig.)

  2. In Situ TEM Creation and Electrical Characterization of Nanowire Devices

    Kallesøe, Christian; Wen, Cheng-Yen; Booth, Timothy J.

    2012-01-01

    bridge devices in situ and relate these to the structure. We also describe processes to modify the contact and the nanowire surface after device formation. The technique we describe allows the direct analysis of the processes taking place during device formation and use, correlating specific nanoscale......We demonstrate the observation and measurement of simple nanoscale devices over their complete lifecycle from creation to failure within a transmission electron microscope. Devices were formed by growing Si nanowires, using the vapor–liquid–solid method, to form bridges between Si cantilevers. We...... structural and electrical parameters on an individual device basis....

  3. Problems of Chernobyl exclusion zone

    1994-01-01

    The collection reflects the results of researches and test-design activities in the exclusion area of the Chernobyl NPP directed to elaborate the equipment and devices for scientific researches and elimination of the accident after effects at the Chernobyl NPP and to study composition and structure of solid-phase bearers of the activity in the soil of the exclusion area, form transformation of decay products, radionuclide composition of the fuel precipitation in the nearest zone of the Chernobyl NPP. Special attention is paid to medical-biological problems of the accident after effects influence on flora, fauna and human health, labour conditions and sick rate of people working in the exclusion area

  4. RELIGIOUS EXCLUSIVITY AND PSYCHOSOCIAL FUNCTIONING.

    Gegelashvili, M; Meca, A; Schwartz, S J

    2015-01-01

    In the present study we sought to clarify links between religious exclusivity, as form of intergroup favoritism, and indices of psychosocial functioning. The study of in group favoritism has generally been invoked within Social Identity Theory and related perspectives. However, there is a lack of literature regarding religious exclusivity from the standpoint of social identity. In particular, the ways in which religious exclusivity is linked with other dimensions of religious belief and practice, and with psychosocial functioning, among individuals from different religious backgrounds are not well understood. A sample of 8545 emerging-adult students from 30 U.S. universities completed special measures. Measure of religious exclusivity was developed and validated for this group. The results suggest that exclusivity appears as predictor for impaired psychosocial functioning, low self-esteem and low psychosocial well-being for individuals from organized faiths, as well as for those identifying as agnostic, atheist, or spiritual/nonreligious. These findings are discussed in terms of Social Identity Theory and Terror Management Theory (TMT).

  5. Long Silver Nanowires Synthesis by Pulsed Electrodeposition

    M.R. Batevandi

    2015-09-01

    Full Text Available Silver nanowires were pulse electrodeposited into nanopore anodic alumina oxide templates. The effects of continuous and pulse electrodeposition waveform on the microstructure properties of the nanowire arrays were studied. It is seen that the microstructure of nanowire is depend to pulse condition. The off time duration of pulse waveform enables to control the growth direction of Ag nanowires.

  6. Silicon nanowire transistors

    Bindal, Ahmet

    2016-01-01

    This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology’s true potential for the next generation VLSI. Describes Silicon Nanowire (SNW) Transistors, as vertically constructed MOS n and p-channel transistors, with low static and dynamic power consumption and small layout footprint; Targets System-on-Chip (SoC) design, supporting very high transistor count (ULSI), minimal power consumption requiring inexpensive substrates for packaging; Enables fabrication of different types...

  7. Conductive Au nanowires regulated by silk fibroin nanofibers

    Dong, Bo-Ju; Lu, Qiang

    2014-03-01

    Conductive Au-biopolymer composites have promising applications in tissue engineering such as nerve tissue regeneration. In this study, silk fibroin nanofibers were formed in aqueous solution by regulating silk self-assembly process and then used as template for Au nanowire fabrication. We performed the synthesis of Au seeds by repeating the seeding cycles for several times in order to increase the density of Au seeds on the nanofibers. After electroless plating, densely decorated Au seeds grew into irregularly shaped particles following silk nanofiber to fill the gaps between particles and finally form uniform continuous nanowires. The conductive property of the Au-silk fibroin nanowires was studied with current-voltage ( I-V) measurement. A typical ohmic behavior was observed, which highlighted their potential applications in nerve tissue regeneration.

  8. Characterization of Nanowire Photodetectors

    2016-11-28

    characterization system and picosecond pulsed laser source will be used to provide deeper insight into the fast charge carrier dynamics in the GaAsSb and...value of the current fluctuations for a particular frequency, f is the effective measurement bandwidth at the discrete frequency point, and IDS is...GaAsSb CS nanowires. The best fit of the spectra with the simulation carried out using Matlab revealed flicker noise at lower frequency having 1/f

  9. Quantum transport in semiconductor nanowires

    Van Dam, J.

    2006-01-01

    This thesis describes a series of experiments aimed at understanding the low-temperature electrical transport properties of semiconductor nanowires. The semiconductor nanowires (1-100 nm in diameter) are grown from nanoscale gold particles via a chemical process called vapor-liquid-solid (VLS)

  10. Development of highly transparent Pd-coated Ag nanowire electrode for display and catalysis applications

    Canlier, Ali, E-mail: ali.canlier@agu.edu.tr [Department of Materials Science and Nanotechnology Engineering, Abdullah Gul University, P.O. Box 38080, Kayseri (Turkey); Ucak, Umit Volkan, E-mail: sirvolkan@gmail.com [Department of Materials Science and Nanotechnology Engineering, Abdullah Gul University, P.O. Box 38080, Kayseri (Turkey); Graduate School of Energy, Environment, Water, and Sustainability (EEWS), Korea Advanced Institute of Science and Technology (KAIST), P.O. Box 305-701, Daejeon (Korea, Republic of); Usta, Hakan, E-mail: husta38@gmail.com [Department of Materials Science and Nanotechnology Engineering, Abdullah Gul University, P.O. Box 38080, Kayseri (Turkey); Cho, Changsoon, E-mail: cscho@kaist.ac.kr [Graduate School of Energy, Environment, Water, and Sustainability (EEWS), Korea Advanced Institute of Science and Technology (KAIST), P.O. Box 305-701, Daejeon (Korea, Republic of); Lee, Jung-Yong, E-mail: jungyong.lee@kaist.ac.kr [Graduate School of Energy, Environment, Water, and Sustainability (EEWS), Korea Advanced Institute of Science and Technology (KAIST), P.O. Box 305-701, Daejeon (Korea, Republic of); Sen, Unal, E-mail: senunal@gmail.com [Department of Mechanical Engineering, Abdullah Gul University, P.O. Box 38080, Kayseri (Turkey); Citir, Murat, E-mail: muratcitir@gmail.com [Department of Chemical Engineering, Abdullah Gul University, P.O. Box 38080, Kayseri (Turkey)

    2015-09-30

    chemical resistivity against nanowire oxidation. The current Pd-coated Ag nanowires may render an excellent catalyst system for fuel cell applications, as well as in organic synthesis with relatively low costs since our approach enables the fabrication of these nanowires with a very thin layer of Pd. We believe that mesh form of Pd-coated Ag nanowires will coin a new catalyst concept to the related areas since their sheet conductivity is high enough, and also little amount of Pd displays a large surface area as thin layers.

  11. Atomic characterization of Au clusters in vapor-liquid-solid grown silicon nanowires

    Chen, Wanghua; Roca i Cabarrocas, Pere; Pareige, Philippe; Castro, Celia; Xu, Tao; Grandidier, Bruno; Stiévenard, Didier

    2015-01-01

    By correlating atom probe tomography with other conventional microscope techniques (scanning electron microscope, scanning transmission electron microscope, and scanning tunneling microscopy), the distribution and composition of Au clusters in individual vapor-liquid-solid grown Si nanowires is investigated. Taking advantage of the characteristics of atom probe tomography, we have developed a sample preparation method by inclining the sample at certain angle to characterize the nanowire sidewall without using focused ion beam. With three-dimensional atomic scale reconstruction, we provide direct evidence of Au clusters tending to remain on the nanowire sidewall rather than being incorporated into the Si nanowires. Based on the composition measurement of Au clusters (28% ± 1%), we have demonstrated the supersaturation of Si atoms in Au clusters, which supports the hypothesis that Au clusters are formed simultaneously during nanowire growth rather than during the cooling process

  12. Atomic characterization of Au clusters in vapor-liquid-solid grown silicon nanowires

    Chen, Wanghua; Roca i Cabarrocas, Pere [Laboratoire de Physique des Interfaces et Couches Minces (LPICM), UMR 7647, CNRS, Ecole Polytechnique, 91128 Palaiseau (France); Pareige, Philippe; Castro, Celia [Groupe de Physique des Matériaux (GPM), Université et INSA de Rouen, UMR 6634, CNRS, Av. de l' Université, BP 12, 76801 Saint Etienne du Rouvray (France); Xu, Tao; Grandidier, Bruno; Stiévenard, Didier [Institut d' Electronique et de Microélectronique et de Nanotechnologies (IEMN), UMR 8520, CNRS, Département ISEN, 41 bd Vauban, 59046 Lille Cedex (France)

    2015-09-14

    By correlating atom probe tomography with other conventional microscope techniques (scanning electron microscope, scanning transmission electron microscope, and scanning tunneling microscopy), the distribution and composition of Au clusters in individual vapor-liquid-solid grown Si nanowires is investigated. Taking advantage of the characteristics of atom probe tomography, we have developed a sample preparation method by inclining the sample at certain angle to characterize the nanowire sidewall without using focused ion beam. With three-dimensional atomic scale reconstruction, we provide direct evidence of Au clusters tending to remain on the nanowire sidewall rather than being incorporated into the Si nanowires. Based on the composition measurement of Au clusters (28% ± 1%), we have demonstrated the supersaturation of Si atoms in Au clusters, which supports the hypothesis that Au clusters are formed simultaneously during nanowire growth rather than during the cooling process.

  13. Growth mechanism of silver nanowires synthesized by polyvinylpyrrolidone-assisted polyol reduction

    Gao Yan; Jiang Peng; Song Li; Liu Lifeng; Yan Xiaoqin; Zhou Zhenping; Liu Dongfang; Wang Jianxiong; Yuan Huajun; Zhang Zengxing; Zhao Xiaowei; Dou Xinyuan; Zhou Weiya; Wang Gang; Xie Sishen

    2005-01-01

    Silver (Ag) nanowires with a pentagonal cross section have been synthesized by polyvinylpyrrolidone (PVP)-assisted polyol reduction in the presence of Pt nanoparticle seeds. The UV-visible absorption spectra and scanning electron microscopy have been used to trace the growth process of the Ag nanowires. X-ray photoelectron spectroscopy investigation further shows that the PVP molecules are adsorbed on the surface of the Ag nanowires through Ag : O coordination. Comparing with the growth process of Ag nanoparticles, a possible growth mechanism of the Ag nanowires has been proposed. It is implied that the PVP molecules are used as both a protecting agent and a structure-directing agent for the growth of Ag nanowires. It is concluded that the five-fold twinning Ag nanoparticles are formed through heterogenous nucleation after the introduction of Pt nanoparticle seeds and then grow anisotropically along the (110) direction, while the growth along (100) is relatively depressed

  14. Self-assembled epitaxial NiSi2 nanowires on Si(001) by reactive deposition epitaxy

    Chen, S.Y.; Chen, L.J.

    2006-01-01

    Self-assembled epitaxial NiSi 2 nanowires have been fabricated on Si(001) by reactive deposition epitaxy (RDE). The RDE method promoted nanowire growth since it provides deposited atoms sufficient kinetic energy for movement on the Si surface during the growth of silicide islands. The twin-related interface between NiSi 2 and Si is directly related to the nanowire formation since it breaks the symmetry of the surface and leads to the asymmetric growth. The temperature of RDE was found to greatly influence the formation of nanowires. By RDE at 750 deg. C, a high density of NiSi 2 nanowires was formed with an average aspect ratio of 30

  15. A deep etching mechanism for trench-bridging silicon nanowires.

    Tasdemir, Zuhal; Wollschläger, Nicole; Österle, Werner; Leblebici, Yusuf; Alaca, B Erdem

    2016-03-04

    Introducing a single silicon nanowire with a known orientation and dimensions to a specific layout location constitutes a major challenge. The challenge becomes even more formidable, if one chooses to realize the task in a monolithic fashion with an extreme topography, a characteristic of microsystems. The need for such a monolithic integration is fueled by the recent surge in the use of silicon nanowires as functional building blocks in various electromechanical and optoelectronic applications. This challenge is addressed in this work by introducing a top-down, silicon-on-insulator technology. The technology provides a pathway for obtaining well-controlled silicon nanowires along with the surrounding microscale features up to a three-order-of-magnitude scale difference. A two-step etching process is developed, where the first shallow etch defines a nanoscale protrusion on the wafer surface. After applying a conformal protection on the protrusion, a deep etch step is carried out forming the surrounding microscale features. A minimum nanowire cross-section of 35 nm by 168 nm is demonstrated in the presence of an etch depth of 10 μm. Nanowire cross-sectional features are characterized via transmission electron microscopy and linked to specific process steps. The technology allows control on all dimensional aspects along with the exact location and orientation of the silicon nanowire. The adoption of the technology in the fabrication of micro and nanosystems can potentially lead to a significant reduction in process complexity by facilitating direct access to the nanowire during surface processes such as contact formation and doping.

  16. A deep etching mechanism for trench-bridging silicon nanowires

    Tasdemir, Zuhal; Alaca, B Erdem; Wollschläger, Nicole; Österle, Werner; Leblebici, Yusuf

    2016-01-01

    Introducing a single silicon nanowire with a known orientation and dimensions to a specific layout location constitutes a major challenge. The challenge becomes even more formidable, if one chooses to realize the task in a monolithic fashion with an extreme topography, a characteristic of microsystems. The need for such a monolithic integration is fueled by the recent surge in the use of silicon nanowires as functional building blocks in various electromechanical and optoelectronic applications. This challenge is addressed in this work by introducing a top-down, silicon-on-insulator technology. The technology provides a pathway for obtaining well-controlled silicon nanowires along with the surrounding microscale features up to a three-order-of-magnitude scale difference. A two-step etching process is developed, where the first shallow etch defines a nanoscale protrusion on the wafer surface. After applying a conformal protection on the protrusion, a deep etch step is carried out forming the surrounding microscale features. A minimum nanowire cross-section of 35 nm by 168 nm is demonstrated in the presence of an etch depth of 10 μm. Nanowire cross-sectional features are characterized via transmission electron microscopy and linked to specific process steps. The technology allows control on all dimensional aspects along with the exact location and orientation of the silicon nanowire. The adoption of the technology in the fabrication of micro and nanosystems can potentially lead to a significant reduction in process complexity by facilitating direct access to the nanowire during surface processes such as contact formation and doping. (paper)

  17. A deep etching mechanism for trench-bridging silicon nanowires

    Tasdemir, Zuhal; Wollschläger, Nicole; Österle, Werner; Leblebici, Yusuf; Erdem Alaca, B.

    2016-03-01

    Introducing a single silicon nanowire with a known orientation and dimensions to a specific layout location constitutes a major challenge. The challenge becomes even more formidable, if one chooses to realize the task in a monolithic fashion with an extreme topography, a characteristic of microsystems. The need for such a monolithic integration is fueled by the recent surge in the use of silicon nanowires as functional building blocks in various electromechanical and optoelectronic applications. This challenge is addressed in this work by introducing a top-down, silicon-on-insulator technology. The technology provides a pathway for obtaining well-controlled silicon nanowires along with the surrounding microscale features up to a three-order-of-magnitude scale difference. A two-step etching process is developed, where the first shallow etch defines a nanoscale protrusion on the wafer surface. After applying a conformal protection on the protrusion, a deep etch step is carried out forming the surrounding microscale features. A minimum nanowire cross-section of 35 nm by 168 nm is demonstrated in the presence of an etch depth of 10 μm. Nanowire cross-sectional features are characterized via transmission electron microscopy and linked to specific process steps. The technology allows control on all dimensional aspects along with the exact location and orientation of the silicon nanowire. The adoption of the technology in the fabrication of micro and nanosystems can potentially lead to a significant reduction in process complexity by facilitating direct access to the nanowire during surface processes such as contact formation and doping.

  18. Molecular beam epitaxial growth and characterization of Al(Ga)N nanowire deep ultraviolet light emitting diodes and lasers

    Mi, Z; Zhao, S; Djavid, M; Liu, X; Kang, J; Woo, S Y; Bugnet, M; Botton, G A; Kong, X; Guo, H; Ji, W; Liu, Z

    2016-01-01

    We report on the detailed molecular beam epitaxial growth and characterization of Al(Ga)N nanowire heterostructures on Si and their applications for deep ultraviolet light emitting diodes and lasers. The nanowires are formed under nitrogen-rich conditions without using any metal catalyst. Compared to conventional epilayers, Mg-dopant incorporation is significantly enhanced in nearly strain- and defect-free Al(Ga)N nanowire structures, leading to efficient p -type conduction. The resulting Al(Ga)N nanowire LEDs exhibit excellent performance, including a turn-on voltage of ∼5.5 V for an AlN nanowire LED operating at 207 nm. The design, fabrication, and performance of an electrically injected AlGaN nanowire laser operating in the UV-B band is also presented. (paper)

  19. Exclusive Dealing and Entry

    João Leão

    2008-01-01

    This paper examines the use of exclusive dealing agreements to prevent the entry of rival firms. An exclusive dealing agreement is a contract between a buyer and a seller where the buyer commits to buy a good exclusively from the seller. One main concern of the literature is to explain how an incumbent seller is able to persuade the buyers to sign an exclusive dealing agreement that deters the entry of a more efficient rival seller. We propose a new explanation when the buyers are downstream ...

  20. Room temperature photoluminescence in the visible range from silicon nanowires grown by a solid-state reaction

    Anguita, J V; Sharma, P; Henley, S J; Silva, S R P

    2009-01-01

    The solid-liquid-solid method (also known as the solid-state method) is used to produce silicon nanowires at the core of silica nanowires with a support catalyst layer structure of nickel and titanium layers sputtered on oxide-coated silicon wafers. This silane-free process is low cost and large-area compatible. Using electron microscopy and Raman spectroscopy we deduce that the wires have crystalline silicon cores. The nanowires show photoluminescence in the visible range (orange), and we investigate the origin of this band. We further show that the nanowires form a random mesh that acts as an efficient optical trap, giving rise to an optically absorbing medium.

  1. Room temperature photoluminescence in the visible range from silicon nanowires grown by a solid-state reaction

    Anguita, J. V.; Sharma, P.; Henley, S. J.; Silva, S. R. P.

    2009-11-01

    The solid-liquid-solid method (also known as the solid-state method) is used to produce silicon nanowires at the core of silica nanowires with a support catalyst layer structure of nickel and titanium layers sputtered on oxide-coated silicon wafers. This silane-free process is low cost and large-area compatible. Using electron microscopy and Raman spectroscopy we deduce that the wires have crystalline silicon cores. The nanowires show photoluminescence in the visible range (orange), and we investigate the origin of this band. We further show that the nanowires form a random mesh that acts as an efficient optical trap, giving rise to an optically absorbing medium.

  2. Magnetic behaviour of densely packed hexagonal arrays of Ni nanowires: Influence of geometric characteristics

    Vazquez, M.; Pirota, K.; Torrejon, J.; Navas, D.; Hernandez-Velez, M.

    2005-01-01

    Densely packed arrays of magnetic nanowires with hexagonal symmetry have been prepared by electrodeposition filling of the nanopores in alumina membranes previously formed by self-assembling induced by anodization. The influence of geometrical characteristics of arrays of Ni nanowires on their hysteresis loops have been studied. These characteristics are controlled by suitable choosing of preparation parameters: nanowires diameter ranges between 18 and 80 nm for lattice parameter of hexagonal symmetry of 65 and 105 nm, while length of nanowires is taken between 500 and 2000 nm. Additionally, the temperature dependence of coercivity when applying the field parallel to the nanowires or in-plane of the membrane has been measured. All these results allows us to conclude that magnetic behaviour is determined by the balance between different energy contributions, namely, the shape anisotropy of individual nanowires, the magnetostatic interaction among nanowires (confirmed to play a decisive role), and seemingly the magnetoelastic anisotropy induced in the nanowires by the alumina matrix through temperature changes as a consequence of their different thermal expansion coefficients

  3. Understanding the true shape of Au-catalyzed GaAs nanowires.

    Jiang, Nian; Wong-Leung, Jennifer; Joyce, Hannah J; Gao, Qiang; Tan, Hark Hoe; Jagadish, Chennupati

    2014-10-08

    With increasing interest in nanowire-based devices, a thorough understanding of the nanowire shape is required to gain tight control of the quality of nanowire heterostructures and improve the performance of related devices. We present a systematic study of the sidewalls of Au-catalyzed GaAs nanowires by investigating the faceting process from the beginning with vapor-liquid-solid (VLS) nucleation, followed by the simultaneous radial growth on the sidewalls, and to the end with sidewall transformation during annealing. The VLS nucleation interface of our GaAs nanowires is revealed by examining cross sections of the nanowire, where the nanowire exhibits a Reuleaux triangular shape with three curved surfaces along {112}A. These curved surfaces are not thermodynamically stable and adopt {112}A facets during radial growth. We observe clear differences in radial growth rate between the ⟨112⟩A and ⟨112⟩B directions with {112}B facets forming due to the slower radial growth rate along ⟨112⟩B directions. These sidewalls transform to {110} facets after high temperature (>500 °C) annealing. A nucleation model is proposed to explain the origin of the Reuleaux triangular shape of the nanowires, and the sidewall evolution is explained by surface kinetic and thermodynamic limitations.

  4. CuO-In2O3 Core-Shell Nanowire Based Chemical Gas Sensors

    Xiaoxin Li

    2014-01-01

    Full Text Available The CuO-In2O3 core-shell nanowire was fabricated by a two-step method. The CuO nanowire core (NWs was firstly grown by the conventional thermal oxidation of Cu meshes at 500°C for 5 hours. Then, the CuO nanowires were immersed into the suspension of amorphous indium hydroxide deposited from the In(AC3 solution by ammonia. The CuO nanowires coated with In(OH3 were subsequently heated at 600°C to form the crystalline CuO-In2O3 core-shell structure, with In2O3 nanocrystals uniformly anchored on the CuO nanowires. The gas sensing properties of the formed CuO-In2O3 core-shell nanowires were investigated by various reducing gases such as hydrogen, carbon monoxide, and propane at elevated temperature. The sensors using the CuO-In2O3 nanowires show improved sensing performance to hydrogen and propane but a suppressed response to carbon monoxide, which could be attributed to the enhanced catalytic properties of CuO with the coated porous In2O3 shell and the p-n junction formed at the core-shell interface.

  5. Atomistic theory of excitonic fine structure in InAs/InP nanowire quantum dot molecules

    Świderski, M.; Zieliński, M.

    2017-03-01

    Nanowire quantum dots have peculiar electronic and optical properties. In this work we use atomistic tight binding to study excitonic spectra of artificial molecules formed by a double nanowire quantum dot. We demonstrate a key role of atomistic symmetry and nanowire substrate orientation rather than cylindrical shape symmetry of a nanowire and a molecule. In particular for [001 ] nanowire orientation we observe a nonvanishing bright exciton splitting for a quasimolecule formed by two cylindrical quantum dots of different heights. This effect is due to interdot coupling that effectively reduces the overall symmetry, whereas single uncoupled [001 ] quantum dots have zero fine structure splitting. We found that the same double quantum dot system grown on [111 ] nanowire reveals no excitonic fine structure for all considered quantum dot distances and individual quantum dot heights. Further we demonstrate a pronounced, by several orders of magnitude, increase of the dark exciton optical activity in a quantum dot molecule as compared to a single quantum dot. For [111 ] systems we also show spontaneous localization of single particle states in one of nominally identical quantum dots forming a molecule, which is mediated by strain and origins from the lack of the vertical inversion symmetry in [111 ] nanostructures of overall C3 v symmetry. Finally, we study lowering of symmetry due to alloy randomness that triggers nonzero excitonic fine structure and the dark exciton optical activity in realistic nanowire quantum dot molecules of intermixed composition.

  6. Synthesis of platinum nanowire networks using a soft template.

    Song, Yujiang; Garcia, Robert M; Dorin, Rachel M; Wang, Haorong; Qiu, Yan; Coker, Eric N; Steen, William A; Miller, James E; Shelnutt, John A

    2007-12-01

    Platinum nanowire networks have been synthesized by chemical reduction of a platinum complex using sodium borohydride in the presence of a soft template formed by cetyltrimethylammonium bromide in a two-phase water-chloroform system. The interconnected polycrystalline nanowires possess the highest surface area (53 +/- 1 m2/g) and electroactive surface area (32.4 +/- 3.6 m2/g) reported for unsupported platinum nanomaterials; the high surface area results from the small average diameter of the nanowires (2.2 nm) and the 2-10 nm pores determined by nitrogen adsorption measurements. Synthetic control over the network was achieved simply by varying the stirring rate and reagent concentrations, in some cases leading to other types of nanostructures including wormlike platinum nanoparticles. Similarly, substitution of a palladium complex for platinum gives palladium nanowire networks. A mechanism of formation of the metal nanowire networks is proposed based on confined metal growth within a soft template consisting of a network of swollen inverse wormlike micelles.

  7. Optical Sensing with Simultaneous Electrochemical Control in Metal Nanowire Arrays

    Janos Vörös

    2010-11-01

    Full Text Available This work explores the alternative use of noble metal nanowire systems in large-scale array configurations to exploit both the nanowires’ conductive nature and localized surface plasmon resonance (LSPR. The first known nanowire-based system has been constructed, with which optical signals are influenced by the simultaneous application of electrochemical potentials. Optical characterization of nanowire arrays was performed by measuring the bulk refractive index sensitivity and the limit of detection. The formation of an electrical double layer was controlled in NaCl solutions to study the effect of local refractive index changes on the spectral response. Resonance peak shifts of over 4 nm, a bulk refractive index sensitivity up to 115 nm/RIU and a limit of detection as low as 4.5 × 10−4 RIU were obtained for gold nanowire arrays. Simulations with the Multiple Multipole Program (MMP confirm such bulk refractive index sensitivities. Initial experiments demonstrated successful optical biosensing using a novel form of particle-based nanowire arrays. In addition, the formation of an ionic layer (Stern-layer upon applying an electrochemical potential was also monitored by the shift of the plasmon resonance.

  8. Unveiling the Formation Pathway of Single Crystalline Porous Silicon Nanowires

    Zhong, Xing; Qu, Yongquan; Lin, Yung-Chen; Liao, Lei; Duan, Xiangfeng

    2011-01-01

    Porous silicon nanowire is emerging as an interesting material system due to its unique combination of structural, chemical, electronic, and optical properties. To fully understand their formation mechanism is of great importance for controlling the fundamental physical properties and enabling potential applications. Here we present a systematic study to elucidate the mechanism responsible for the formation of porous silicon nanowires in a two-step silver-assisted electroless chemical etching method. It is shown that silicon nanowire arrays with various porosities can be prepared by varying multiple experimental parameters such as the resistivity of the starting silicon wafer, the concentration of oxidant (H2O2) and the amount of silver catalyst. Our study shows a consistent trend that the porosity increases with the increasing wafer conductivity (dopant concentration) and oxidant (H2O2) concentration. We further demonstrate that silver ions, formed by the oxidation of silver, can diffuse upwards and re-nucleate on the sidewalls of nanowires to initiate new etching pathways to produce porous structure. The elucidation of this fundamental formation mechanism opens a rational pathway to the production of wafer-scale single crystalline porous silicon nanowires with tunable surface areas ranging from 370 m2·g−1 to 30 m2·g−1, and can enable exciting opportunities in catalysis, energy harvesting, conversion, storage, as well as biomedical imaging and therapy. PMID:21244020

  9. Novel mechanical behaviors of wurtzite CdSe nanowires

    Fu, Bing [Shanghai Normal University, Department of Physics (China); Chen, Li [MCPHS University, School of Arts and Sciences (United States); Xie, Yiqun; Feng, Jie; Ye, Xiang, E-mail: yexiang@shnu.edu.cn [Shanghai Normal University, Department of Physics (China)

    2015-09-15

    As an important semiconducting nanomaterial, CdSe nanowires have attracted much attention. Although many studies have been conducted in the electronic and optical properties of CdSe NWs, the mechanical properties of Wurtzite (WZ) CdSe nanowires remain unclear. Using molecular dynamics simulations, we have studied the tensile mechanical properties and behaviors of [0001]-oriented Wurtzite CdSe nanowires. By monitoring the stretching processes of CdSe nanowires, three distinct structures are found: the WZ wire, a body-centered tetragonal structure with four-atom rings (denoted as BCT-4), and a structure that consists of ten-atom rings with two four-atom rings (denoted as TAR-4) which is observed for the first time. Not only the elastic tensile characteristics are highly reversible under unloading, but a reverse transition between TAR-4 and BCT-4 is also observed. The stretching processes also have a strong dependence on temperature. A tubular structure similar to carbon nanotubes is observed at 150 K, a single-atom chain is formed at 300, 350 and 450 K, and a double-atom chain is found at 600 K. Our findings on tensile mechanical properties of WZ CdSe nanowires does not only provide inspiration to future study on other properties of CdSe nanomaterials but also help design and build efficient nanoscale devices.

  10. Switching behavior of resistive change memory using oxide nanowires

    Aono, Takashige; Sugawa, Kosuke; Shimizu, Tomohiro; Shingubara, Shoso; Takase, Kouichi

    2018-06-01

    Resistive change random access memory (ReRAM), which is expected to be the next-generation nonvolatile memory, often has wide switching voltage distributions due to many kinds of conductive filaments. In this study, we have tried to suppress the distribution through the structural restriction of the filament-forming area using NiO nanowires. The capacitor with Ni metal nanowires whose surface is oxidized showed good switching behaviors with narrow distributions. The knowledge gained from our study will be very helpful in producing practical ReRAM devices.

  11. Towards quantum dots on GaAs nanowires

    Moesl, Johannes; Ludwig, Stefan [Fakultaet fuer Physik, Center for NanoScience, LMU Munich, Geschwister-Scholl- Platz 1, D-80539 Muenchen (Germany); Fontcuberta i Morral, Anna [TU Munich, Walter Schottky Institut, Am Coulombwall 3, 85748 Garching (Germany); EPF, Lausanne (Switzerland)

    2009-07-01

    Semiconductor nanowires is an emergent research topic in the field of nanoelectronics, as they form an excellent building block for 0D and 1D applications and allow novel architectures and material combinations. We study electronic transport properties of catalyst-free MBE grown GaAs nanowires, p-doped at a number of different doping levels. Detailed characterization of the wires including electronic contacts fabricated by e-beam lithography and based on palladium or annealed zinc-silver alloys are discussed. Contact properties and a pronounced hysteresis of the current through the nanowires, as a backgate-voltage is swept, are explained within tentative models. In addition we present first transport measurements on quantum dots, which are defined electrostatically as well as by etched constrictions.

  12. Graphene templated Directional Growth of an Inorganic Nanowire

    2015-03-23

    14,23–25 have only formed randomly oriented or poorly aligned inorganic nanostructures. Here, we show that inorganic nanowires of gold(I) cyanide can... complex . TEM image simulation from the crystal structure The TEM image simulations are performed using MacTempas and CrystalKit. The imaging

  13. Superconductivity in nanowires

    Bezryadin, Alexey

    2012-01-01

    The importance and actuality of nanotechnology is unabated and will be for years to come. A main challenge is to understand the various properties of certain nanostructures, and how to generate structures with specific properties for use in actual applications in Electrical Engineering and Medicine.One of the most important structures are nanowires, in particular superconducting ones. They are highly promising for future electronics, transporting current without resistance and at scales of a few nanometers. To fabricate wires to certain defined standards however, is a major challenge, and so i

  14. Optical Binding of Nanowires

    Simpson, Stephen Hugh; Zemánek, Pavel; Marago, O.M.; Jones, P.H.; Hanna, S.

    2017-01-01

    Roč. 17, č. 6 (2017), s. 3485-3492 ISSN 1530-6984 R&D Projects: GA ČR GB14-36681G Grant - others:AV ČR(CZ) CNR-16-12 Program:Bilaterální spolupráce Institutional support: RVO:68081731 Keywords : optical binding nanowires * Brownian motion * self-organization * non-equilibrium thermodynamics * non-equilibrium steady state * spin-orbit coupling * emergent phenomena Subject RIV: BH - Optics, Masers, Lasers OBOR OECD: Optics (including laser optics and quantum optics) Impact factor: 12.712, year: 2016

  15. Contact planarization of ensemble nanowires

    Chia, A. C. E.; LaPierre, R. R.

    2011-06-01

    The viability of four organic polymers (S1808, SC200, SU8 and Cyclotene) as filling materials to achieve planarization of ensemble nanowire arrays is reported. Analysis of the porosity, surface roughness and thermal stability of each filling material was performed. Sonication was used as an effective method to remove the tops of the nanowires (NWs) to achieve complete planarization. Ensemble nanowire devices were fully fabricated and I-V measurements confirmed that Cyclotene effectively planarizes the NWs while still serving the role as an insulating layer between the top and bottom contacts. These processes and analysis can be easily implemented into future characterization and fabrication of ensemble NWs for optoelectronic device applications.

  16. Nanoparticle Stability in Axial InAs-InP Nanowire Heterostructures with Atomically Sharp Interfaces.

    Zannier, Valentina; Rossi, Francesca; Dubrovskii, Vladimir G; Ercolani, Daniele; Battiato, Sergio; Sorba, Lucia

    2018-01-10

    The possibility to expand the range of material combinations in defect-free heterostructures is one of the main motivations for the great interest in semiconductor nanowires. However, most axial nanowire heterostructures suffer from interface compositional gradients and kink formation, as a consequence of nanoparticle-nanowire interactions during the metal-assisted growth. Understanding such interactions and how they affect the growth mode is fundamental to achieve a full control over the morphology and the properties of nanowire heterostructures for device applications. Here we demonstrate that the sole parameter affecting the growth mode (straight or kinked) of InP segments on InAs nanowire stems by the Au-assisted method is the nanoparticle composition. Indeed, straight InAs-InP nanowire heterostructures are obtained only when the In/Au ratio in the nanoparticles is low, typically smaller than 1.5. For higher In content, the InP segments tend to kink. Tailoring the In/Au ratio by the precursor fluxes at a fixed growth temperature enables us to obtain straight and radius-uniform InAs-InP nanowire heterostructures (single and double) with atomically sharp interfaces. We present a model that is capable of describing all the experimentally observed phenomena: straight growth versus kinking, the stationary nanoparticle compositions in pure InAs and InAs-InP nanowires, the crystal phase trends, and the interfacial abruptness. By taking into account different nanowire/nanoparticle interfacial configurations (forming wetting or nonwetting monolayers in vertical or tapered geometry), our generalized model provides the conditions of nanoparticle stability and abrupt heterointerfaces for a rich variety of growth scenarios. Therefore, our results provide a powerful tool for obtaining high quality InAs-InP nanowire heterostructures with well-controlled properties and can be extended to other material combinations based on the group V interchange.

  17. Computationally derived rules for persistence of C60 nanowires on recumbent pentacene bilayers.

    Cantrell, Rebecca A; James, Christine; Clancy, Paulette

    2011-08-16

    The tendency for C(60) nanowires to persist on two monolayers of recumbent pentacene is studied using molecular dynamics (MD) simulations. A review of existing experimental literature for the tilt angle adopted by pentacene on noble metal surfaces shows that studies cover a limited range from 55° to 90°, motivating simulation studies of essentially the entire range of tilt angles (10°-90°) to predict the optimum surface tilt angle for C(60) nanowire formation. The persistence of a 1D nanowire depends sensitively on this tilt angle, the amount of initial tensile strain, and the presence of surface step edges. At room temperature, C(60) nanowires oriented along the pentacene short axes persist for several nanoseconds and are more likely to occur if they reside between, or within, pentacene rows for ϕ ≤ ∼60°. The likelihood of this persistence increases the smaller the tilt angle. Nanowires oriented along the long axes of pentacene molecules are unlikely to form. The limit of stability of nanowires was tested by raising the temperature to 400 K. Nanowires located between pentacene rows survived this temperature rise, but those located initially within pentacene rows are only stable in the range ϕ(1) = 30°-50°. Flatter pentacene surfaces, that is, tilt angles above about 60°, are subject to disorder caused by C(60) molecules "burrowing" into the pentacene surface. An initial strain of 5% applied to the C(60) nanowires significantly decreases the likelihood of nanowire persistence. In contrast, any appreciable surface roughness, even by half a monolayer in height of a third pentacene monolayer, strongly enhances the likelihood of nanowire formation due to the strong binding energy of C(60) molecules to step edges.

  18. Fabrication of Nano-Micro Hybrid Structures by Replication and Surface Treatment of Nanowires

    Yeonho Jeong

    2017-07-01

    Full Text Available Nanowire structures have attracted attention in various fields, since new characteristics could be acquired in minute regions. Especially, Anodic Aluminum Oxide (AAO is widely used in the fabrication of nanostructures, which has many nanosized pores and well-organized nano pattern. Using AAO as a template for replication, nanowires with a very high aspect ratio can be fabricated. Herein, we propose a facile method to fabricate a nano-micro hybrid structure using nanowires replicated from AAO, and surface treatment. A polymer resin was coated between Polyethylene terephthalate (PET and the AAO filter, roller pressed, and UV-cured. After the removal of aluminum by using NaOH solution, the nanowires aggregated to form a micropattern. The resulting structure was subjected to various surface treatments to investigate the surface behavior and wettability. As opposed to reported data, UV-ozone treatment can enhance surface hydrophobicity because the UV energy affects the nanowire surface, thus altering the shape of the aggregated nanowires. The hydrophobicity of the surface could be further improved by octadecyltrichlorosilane (OTS coating immediately after UV-ozone treatment. We thus demonstrated that the nano-micro hybrid structure could be formed in the middle of nanowire replication, and then, the shape and surface characteristics could be controlled by surface treatment.

  19. Wurtzite InP nanowire arrays grown by selective area MOCVD

    Chu, Hyung-Joon; Stewart, Lawrence; Yeh, Ting-Wei; Dapkus, P.D.

    2010-01-01

    InP nanowires are a unique material phase because this normally zincblende material forms in the wurtzite crystal structure below a critical diameter owing to the contribution of sidewalls to the total formation energy. This may allow control of the carrier transport and optical properties of InP nanowires for applications such as nano scale transistors, lasers and detectors. In this work, we describe the fabrication of InP nanowire arrays by selective area growth using MOCVD in the diameter range where the wurtzite structure is formed. The spatial growth rate in selective area growth is modeled by a diffusion model for the precursors. The proposed model achieves an average error of 9%. Electron microscopy shows that the grown InP nanowires are in the wurtzite crystal phase with many stacking faults. The threshold diameter of the crystal phase transition of InP nanowires is larger than the thermodynamic estimation. In order to explain this tendency, we propose a surface kinetics model based on a 2 x 2 reconstruction. This model can explain the increased tendency for wurtzite nanowire formation on InP (111)A substrates and the preferred growth direction of binary III-V compound semiconductor nanowires. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Metal-Catalyst-Free Synthesis and Characterization of Single-Crystalline Silicon Oxynitride Nanowires

    Shuang Xi

    2012-01-01

    Full Text Available Large quantities of single-crystal silicon oxynitride nanowires with high N concentration have been synthesized directly on silicon substrate at 1200°C without using any metal catalyst. The diameter of these ternary nanowires is ranging from 10 to 180 nm with log-normal distribution, and the length of these nanowires varies from a few hundreds of micrometers to several millimeters. A vapor-solid mechanism was proposed to explain the growth of the nanowires. These nanowires are grown to form a disordered mat with an ultrabright white nonspecular appearance. The mat demonstrates highly diffusive reflectivity with the optical reflectivity of around 80% over the whole visible wavelength, which is comparable to the most brilliant white beetle scales found in nature. The whiteness might be resulted from the strong multiscattering of a large fraction of incident light on the disordered nanowire mat. These ultra-bright white nanowires could form as reflecting surface to meet the stringent requirements of bright-white light-emitting-diode lighting for higher optical efficiency. They can also find applications in diverse fields such as sensors, cosmetics, paints, and tooth whitening.

  1. Interactions between semiconductor nanowires and living cells.

    Prinz, Christelle N

    2015-06-17

    Semiconductor nanowires are increasingly used for biological applications and their small dimensions make them a promising tool for sensing and manipulating cells with minimal perturbation. In order to interface cells with nanowires in a controlled fashion, it is essential to understand the interactions between nanowires and living cells. The present paper reviews current progress in the understanding of these interactions, with knowledge gathered from studies where living cells were interfaced with vertical nanowire arrays. The effect of nanowires on cells is reported in terms of viability, cell-nanowire interface morphology, cell behavior, changes in gene expression as well as cellular stress markers. Unexplored issues and unanswered questions are discussed.

  2. Novel Crystal Structure C60 Nanowire

    Mickelson, William; Aloni, Shaul; Han, Weiqiang; Cumings, John; Zettl, Alex

    2003-03-01

    We have created insulated C60 nanowire by packing C60 molecules into the interior of insulating boron nitride (BN) nanotubes. For small-diameter BN tubes, the wire consists of a linear chain of C60's. With increasing BN tube inner diameter, novel C60 stacking configurations are obtained (including helical, hollow core, and incommensurate) which are unknown for bulk or thin film forms of C60. C60 in BN nanotubes presents a model system for studying the properties of new dimensionally-constrained "silo" crystal structures.

  3. Nanowire-integrated microporous silicon membrane for continuous fluid transport in micro cooling device

    So, Hongyun; Pisano, Albert P.; Cheng, Jim C.

    2013-01-01

    We report an efficient passive micro pump system combining the physical properties of nanowires and micropores. This nanowire-integrated microporous silicon membrane was created to feed coolant continuously onto the surface of the wick in a micro cooling device to ensure it remains hydrated and in case of dryout, allow for regeneration of the system. The membrane was fabricated by photoelectrochemical etching to form micropores followed by hydrothermal growth of nanowires. This study shows a promising approach to address thermal management challenges for next generation electronic devices with absence of external power

  4. Current–Voltage Characterization of Individual As-Grown Nanowires Using a Scanning Tunneling Microscope

    2013-01-01

    Utilizing semiconductor nanowires for (opto)electronics requires exact knowledge of their current–voltage properties. We report accurate on-top imaging and I–V characterization of individual as-grown nanowires, using a subnanometer resolution scanning tunneling microscope with no need for additional microscopy tools, thus allowing versatile application. We form Ohmic contacts to InP and InAs nanowires without any sample processing, followed by quantitative measurements of diameter dependent I–V properties with a very small spread in measured values compared to standard techniques. PMID:24059470

  5. Current-voltage characterization of individual as-grown nanowires using a scanning tunneling microscope.

    Timm, Rainer; Persson, Olof; Engberg, David L J; Fian, Alexander; Webb, James L; Wallentin, Jesper; Jönsson, Andreas; Borgström, Magnus T; Samuelson, Lars; Mikkelsen, Anders

    2013-11-13

    Utilizing semiconductor nanowires for (opto)electronics requires exact knowledge of their current-voltage properties. We report accurate on-top imaging and I-V characterization of individual as-grown nanowires, using a subnanometer resolution scanning tunneling microscope with no need for additional microscopy tools, thus allowing versatile application. We form Ohmic contacts to InP and InAs nanowires without any sample processing, followed by quantitative measurements of diameter dependent I-V properties with a very small spread in measured values compared to standard techniques.

  6. Site-selective fabrication of conducting molecular nanowires based on electrocrystallization

    Hasegawa, H.; Kubota, T.; Mashiko, S.

    2005-01-01

    We have grown nanowires in a selective position by using an electrochemical process and alternating current. Nanoscale electrocrystallization was carried out in an axially substituted phthalocyanine solution using substrates with two electrodes formed by photolithography. The growth area was limited to the narrowest part of the gap between the tips of the electrodes by using tapered electrodes. The nanowires obtained had a width of approximately 100 nm and a length of more than 1 μm. Analysis of the selected-area electron diffraction pattern showed that the nanowire structure was identical to that of bulk crystal

  7. Electric Conductivity of Phosphorus Nanowires

    Jing-Xiang, Zhang; Hui, Li; Xue-Qing, Zhang; Kim-Meow, Liew

    2009-01-01

    We present the structures and electrical transport properties of nanowires made from different strands of phosphorus chains encapsulated in carbon nanotubes. Optimized by density function theory, our results indicate that the conductance spectra reveal an oscillation dependence on the size of wires. It can be seen from the density of states and current-voltage curves that the structure of nanowires affects their properties greatly. Among them, the DNA-like double-helical phosphorus nanowire exhibits the distinct characteristic of an approximately linear I – V relationship and has a higher conductance than others. The transport properties of phosphorus nanowires are highly correlated with their microstructures. (condensed matter: structure, mechanical and thermal properties)

  8. Tunneling magnetoresistance in Si nanowires

    Montes Muñ oz, Enrique; Rungger, I.; Sanvito, S.; Schwingenschlö gl, Udo

    2016-01-01

    for quantum transport. Silicon nanowires represent an interesting platform for spin devices. They are compatible with mature silicon technology and their intrinsic electronic properties can be controlled by modifying the diameter and length. Here we

  9. Social Exclusion Anxiety

    Søndergaard, Dorte Marie

    2017-01-01

    Social exclusion anxiety is a term which builds on a social-psychological concept of human beings as existentially dependent on social embeddedness. This entry explores the concept in relation to bullying among children, which is a widespread and serious problem in schools and institutions. Social...... exclusion anxiety and longing for belonging are both central aspects of the affects and processes that enact and challenge social groups. Social exclusion anxiety should not be confused with ‘social phobia’, which is a concept within clinical psychology that focuses on the individual and refers to a phobic...... psychological condition. Social exclusion anxiety instead points to a distributed affect which circulates and smolders in all social groups. This is the result of an ever-present risk of someone being judged unworthy to belong to, or deemed not a legitimate participant in, a social group. Such anxiety may...

  10. Biotemplated Synthesis of PZT Nanowires

    2013-11-25

    electromechanical coupling coefficient , Y is the Young’s modulus, and Ri is intrinsic resistance. The PZT nanowire- based film is taken to have negligible...robotic actuation, and bioMEMS. Lead zirconate titanate ( PZT ), in particular, has attracted significant attention, owing to its superior...electromechanical conversion performance. Yet, the ability to synthesize crystalline PZT nanowires with reproducible and well-controlled properties remains a

  11. Silicon nanowires: structure and properties

    Nezhdanov, A.V.; Mashin, A.I.; Razuvaev, A.G.; Ershov, A.V.; Ignatov, S.K.

    2006-01-01

    An attempt to grow silicon nanowires has been made by electron beam evaporation on highly oriented pyrolytic substrate. Needle-like objects are located along the normal to a substrate (density 2 x 10 11 cm -2 ). For modeling quasi-one-dimensional objects calculations of nuclear structure and energy spectra have been accomplished. A fullerene-like structure Si 24 is proposed as a basic atomic configuration of silicon nanowires [ru

  12. Structural and tunneling properties of Si nanowires

    Montes Muñoz, Enrique

    2013-12-06

    We investigate the electronic structure and electron transport properties of Si nanowires attached to Au electrodes from first principles using density functional theory and the nonequilibrium Green\\'s function method. We systematically study the dependence of the transport properties on the diameter of the nanowires, on the growth direction, and on the length. At the equilibrium Au-nanowire distance we find strong electronic coupling between the electrodes and nanowires, which results in a low contact resistance. With increasing nanowire length we study the transition from metallic to tunneling conductance for small applied bias. For the tunneling regime we investigate the decay of the conductance with the nanowire length and rationalize the results using the complex band structure of the pristine nanowires. The conductance is found to depend strongly on the growth direction, with nanowires grown along the ⟨110⟩ direction showing the smallest decay with length and the largest conductance and current.

  13. Structural and tunneling properties of Si nanowires

    Montes Muñ oz, Enrique; Gkionis, Konstantinos; Rungger, Ivan; Sanvito, Stefano; Schwingenschlö gl, Udo

    2013-01-01

    We investigate the electronic structure and electron transport properties of Si nanowires attached to Au electrodes from first principles using density functional theory and the nonequilibrium Green's function method. We systematically study the dependence of the transport properties on the diameter of the nanowires, on the growth direction, and on the length. At the equilibrium Au-nanowire distance we find strong electronic coupling between the electrodes and nanowires, which results in a low contact resistance. With increasing nanowire length we study the transition from metallic to tunneling conductance for small applied bias. For the tunneling regime we investigate the decay of the conductance with the nanowire length and rationalize the results using the complex band structure of the pristine nanowires. The conductance is found to depend strongly on the growth direction, with nanowires grown along the ⟨110⟩ direction showing the smallest decay with length and the largest conductance and current.

  14. Controlling nanowire emission profile using conical taper

    Gregersen, Niels; Nielsen, Torben Roland; Mørk, Jesper

    2008-01-01

    The influence of a conical taper on nanowire light emission is studied. For nanowires with divergent output beams, the introduction of tapers improves the emission profile and increase the collection efficiency of the detection optics....

  15. DC electrodeposition of NiGa alloy nanowires in AAO template

    Maleki, K. [Nanomaterials Group, Department of Materials Engineering, Tarbiat Modares University, Iran, P.O. Box: 14115-143, Tehran (Iran, Islamic Republic of); Sanjabi, S., E-mail: sanjabi@modares.ac.ir [Nanomaterials Group, Department of Materials Engineering, Tarbiat Modares University, Iran, P.O. Box: 14115-143, Tehran (Iran, Islamic Republic of); Alemipour, Z. [Department of Physics, University of Kurdistan, Sanandaj (Iran, Islamic Republic of)

    2015-12-01

    NiGa alloy nanowires were electrodeposited from an acidic sulfate bath into nanoporous anodized alumina oxide (AAO). This template was fabricated by two-step anodizing. The effects of bath composition and current density were explored on the Ga content of electrodeposited nanowires. The Ga content in the deposits was increased by increasing both Ga in the bath composition and electrodepositing current density. The NiGa alloy nanowires were synthesized for Ga content up to 2–4% without significant improving the magnetic properties. Above this threshold Ga clusters were formed and decreased the magnetic properties of the nanowires. For Ga content of the alloy above 30%, the wires were too short and incomplete. X-ray diffraction patterns reveal that the significant increase of Ga content in the nanowires, changes the FCC crystal structure of Ni to an amorphous phase. It also causes a sizeable increase in the Ga cluster size; these both lead to a significant reduction in the coercivity and the magnetization respectively. - Highlights: • NiGa alloy nanowires were electrodeposited from acidic sulphate baths into nanoporous anodized alumina oxide (AAO) template. • The Ga content was increased by increasing the Ga in the bath composition and electrodeposition current density. • The magnetic parameters such as coercivity and magnetization were not changed for the alloy nanowire with Ga content less than 4%.

  16. Self-supported supercapacitor membrane through incorporating MnO2 nanowires into carbon nanotube networks.

    Fang, Yueping; Liu, Jianwei; Li, Jun

    2010-08-01

    We report on a study on the development of a self-supported membrane of carbon nanotube (CNT) mixed with MnO2 nanowires as supercapacitors. Both single-walled CNTs (SWCNTs) and multiwalled CNTs (MWCNTs) have been explored to serve as the electrically conductive networks to connect redox active MnO2 nanowires. High-quality alpha-MnO2 nanowires were synthesized using bulk alpha-MnO2 crystals as the precursor by a facile hydrothermal method. The morphology and structure of the as-prepared alpha-MnO2 nanowires were characterized by X-ray and electron diffraction, transmission electron microscopy, and scanning electron microscopy. Supercapacitor membranes were prepared by filtration of mixture solutions of MnO2 nanowires and CNTs at various ratios, forming entangled networks which are self-supported and directly used as supercapacitor electrodes without binders or backing metals. Cyclic voltammetry at various scan rates and charge--discharging measurements are used to characterize the supercapacitance of the CNT-MnO2 nanowire membranes. The specific capacitance has been found to be increased by several times over that of pure CNT membranes after incorporation of MnO2 nanowires.

  17. Room-temperature solution synthesis of Ag nanoparticle functionalized molybdenum oxide nanowires and their catalytic applications

    Dong Wenjun; Huang Huandi; Zhu Yanjun; Li Xiaoyun; Wang Xuebin; Li Chaorong; Chen Benyong; Wang Ge; Shi Zhan

    2012-01-01

    A simple chemical solution route for the synthesis of large-scale high-quality Ag nanoparticle functionalized molybdenum oxide nanowire at room temperature has been developed. In the synthesis, the protonated amine was intercalated into the molybdenum bronze layers to reduce the electrostatic force of the lamellar structures, and then the Ag nanoparticle functionalized long nanowires could be easily induced by a redox reaction between a molybdenum oxide–amine intermediate and Ag + at room temperature. The intercalation lamellar structures improved the nucleation and growth of the Ag nanoparticles, with the result that uniform Ag nanoparticles occurred on the surface of the MoO 3 nanowire. In this way Ag nanoparticles with average sizes of around 6 nm, and high-purity nanowires with mean diameter of around 50 nm and with typical lengths of several tens to hundreds of micrometers were produced. The heteronanostructured nanowires were intricately and inseparably connected to each other with hydrogen bonds and/or bridge oxygen atoms and packed together, forming a paper-like porous network film. The Ag–MoO 3 nanowire film performs a promoted catalytic property for the epoxidation of cis-cyclooctene, and the heteronanostructured nanowire film sensor shows excellent sensing performance to hydrogen and oxygen at room temperature. (paper)

  18. Room-temperature solution synthesis of Ag nanoparticle functionalized molybdenum oxide nanowires and their catalytic applications.

    Dong, Wenjun; Huang, Huandi; Zhu, Yanjun; Li, Xiaoyun; Wang, Xuebin; Li, Chaorong; Chen, Benyong; Wang, Ge; Shi, Zhan

    2012-10-26

    A simple chemical solution route for the synthesis of large-scale high-quality Ag nanoparticle functionalized molybdenum oxide nanowire at room temperature has been developed. In the synthesis, the protonated amine was intercalated into the molybdenum bronze layers to reduce the electrostatic force of the lamellar structures, and then the Ag nanoparticle functionalized long nanowires could be easily induced by a redox reaction between a molybdenum oxide-amine intermediate and Ag(+) at room temperature. The intercalation lamellar structures improved the nucleation and growth of the Ag nanoparticles, with the result that uniform Ag nanoparticles occurred on the surface of the MoO(3) nanowire. In this way Ag nanoparticles with average sizes of around 6 nm, and high-purity nanowires with mean diameter of around 50 nm and with typical lengths of several tens to hundreds of micrometers were produced. The heteronanostructured nanowires were intricately and inseparably connected to each other with hydrogen bonds and/or bridge oxygen atoms and packed together, forming a paper-like porous network film. The Ag-MoO(3) nanowire film performs a promoted catalytic property for the epoxidation of cis-cyclooctene, and the heteronanostructured nanowire film sensor shows excellent sensing performance to hydrogen and oxygen at room temperature.

  19. Semiconducting silicon nanowires for biomedical applications

    Coffer, JL

    2014-01-01

    Biomedical applications have benefited greatly from the increasing interest and research into semiconducting silicon nanowires. Semiconducting Silicon Nanowires for Biomedical Applications reviews the fabrication, properties, and applications of this emerging material. The book begins by reviewing the basics, as well as the growth, characterization, biocompatibility, and surface modification, of semiconducting silicon nanowires. It goes on to focus on silicon nanowires for tissue engineering and delivery applications, including cellular binding and internalization, orthopedic tissue scaffol

  20. Electrochemical synthesis of highly crystalline copper nanowires

    Kaur, Amandeep; Gupta, Tanish; Kumar, Akshay; Kumar, Sanjeev; Singh, Karamjeet; Thakur, Anup

    2015-01-01

    Copper nanowires were fabricated within the pores of anodic alumina template (AAT) by template synthesis method at pH = 2.9. X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) were used to investigate the structure, morphology and composition of fabricated nanowires. These characterizations revealed that the deposited copper nanowires were highly crystalline in nature, dense and uniform. The crystalline copper nanowires are promising in application of future nanoelectronic devices and circuits

  1. Formation of Ag nanowires on graphite stepped surfaces. A DFT study

    Ambrusi, Rubén E.; García, Silvana G.; Pronsato, María E.

    2015-01-01

    We investigate the feasibility of obtaining silver nanowires on graphite stepped surfaces theoretically, using density functional theory calculations. Three layer slabs are used to model graphite surfaces with and without defects. Adsorption energies for Ag atoms on graphite surfaces were calculated showing the preference of Ag adatoms to locate on the steps, forming linear structures like nanowires. An analysis of the charge densities and projected densities of states for different structures is also performed.

  2. From dopyballs to nanowires

    Smalley, R E [Rice Quantum Inst. and Depts. of Chemistry and Physics, Rice Univ., Houston, TX (United States)

    1993-04-19

    Consideration of the factors involved in the production of fullerene nanotubes in carbon arcs leads to the notion that a high electric field may be the critical factor that causes the tubes to grow. This thought then leads to a suggestion that it may be possible to grow continuous fullerene fibers many centimeters in length by an electric-field-and-laser induced pyrolysis of gas phase hydrocarbons of fullerenes on the tip of the growing fiber as it extends out from its place of attachment on a high voltage needle. Use of metal- or boron-doped fullerenes (dopyballs) in such an apparatus may lead to the production of doped fullerene fiber nanowires of high strength and conductivity. (orig.)

  3. Indium Arsenide Nanowires

    Madsen, Morten Hannibal

    -ray diffraction. InAs NWs can be used in a broad range of applications, including detectors, high speed electronics and low temperature transport measurements, but in this thesis focus will be put on biological experiments on living cells. Good control of Au-assisted InAs NW growth has been achieved......This thesis is about growth of Au-assisted and self-assisted InAs nanowires (NWs). The wires are synthesized using a solid source molecular beam epitaxy (MBE) system and characterized with several techniques including scanning electron microscopy (SEM), transmission electron microscopy (TEM) and x...... by a systematic study to optimize the growth conditions; first the Au deposition, then the growth temperature and finally the beam fluxes. For further control of the growth, Au droplets have been positioned with electron beam lithography and large scale arrays with a > 99 % yield have been made on 2 inch...

  4. Resonance of curved nanowires

    Calabri, L [CNR-INFM-National Research Center on nanoStructures and bioSystems at Surfaces (S3), Via Campi 213/a, 41100 Modena (Italy); Pugno, N [Department of Structural Engineering and Geotechnics, Politecnico di Torino, Turin (Italy); Ding, W [Department of Mechanical Engineering, Northwestern University, Evanston, IL 60208-3111 (United States); Ruoff, R S [Department of Mechanical Engineering, Northwestern University, Evanston, IL 60208-3111 (United States)

    2006-08-23

    The effects of non-ideal experimental configuration on the mechanical resonance of boron (B) nanowires (NWs) were studied to obtain the corrected value for the Young's modulus. The following effects have been theoretically considered: (i) the presence of intrinsic curvature (ii) non-ideal clamps (iii) spurious masses (iv) coating layer, and (v) large displacements. An energy-based analytical analysis was developed to treat such effects and their interactions. Here, we focus on treating the effect of the intrinsic curvature on the mechanical resonance. The analytical approach has been confirmed by numerical FEM analysis. A parallax method was used to obtain the three-dimensional geometry of the NW.

  5. Corrosion detection of nanowires by magnetic sensors

    Kosel, Jü rgen; Amara, Selma; Ivanov, Iurii; Blanco, Mario

    2017-01-01

    Disclosed are various embodiments related to a corrosion detection device for detecting corrosive environments. A corrosion detection device comprises a magnetic sensor and at least one magnetic nanowire disposed on the magnetic sensor. The magnetic sensor is configured to detect corrosion of the one or more magnetic nanowires based at least in part on a magnetic field of the one or more magnetic nanowires.

  6. Corrosion detection of nanowires by magnetic sensors

    Kosel, Jürgen

    2017-10-05

    Disclosed are various embodiments related to a corrosion detection device for detecting corrosive environments. A corrosion detection device comprises a magnetic sensor and at least one magnetic nanowire disposed on the magnetic sensor. The magnetic sensor is configured to detect corrosion of the one or more magnetic nanowires based at least in part on a magnetic field of the one or more magnetic nanowires.

  7. Controlled formation of metallic nanowires via Au nanoparticle ac trapping

    Bernard, L; Calame, M; Molen, S J van der; Liao, J; Schoenenberger, C

    2007-01-01

    Applying ac voltages, we trapped gold nanoparticles between micro-fabricated electrodes under well-defined conditions. We demonstrate that the nanoparticles can be controllably fused together to form homogeneous gold nanowires with pre-defined diameters and conductance values. Whereas electromigration is known to form a gap when a dc voltage is applied, this ac technique achieves the opposite, thereby completing the toolkit for the fabrication of nanoscale junctions

  8. Controlled formation of metallic nanowires via Au nanoparticle ac trapping

    Bernard, L; Calame, M; Molen, S J van der; Liao, J; Schoenenberger, C [Institute of Physics, University of Basel, CH-4056 Basel (Switzerland)

    2007-06-13

    Applying ac voltages, we trapped gold nanoparticles between micro-fabricated electrodes under well-defined conditions. We demonstrate that the nanoparticles can be controllably fused together to form homogeneous gold nanowires with pre-defined diameters and conductance values. Whereas electromigration is known to form a gap when a dc voltage is applied, this ac technique achieves the opposite, thereby completing the toolkit for the fabrication of nanoscale junctions.

  9. Topological insulator nanowires and nanowire hetero-junctions

    Deng, Haiming; Zhao, Lukas; Wade, Travis; Konczykowski, Marcin; Krusin-Elbaum, Lia

    2014-03-01

    The existing topological insulator materials (TIs) continue to present a number of challenges to complete understanding of the physics of topological spin-helical Dirac surface conduction channels, owing to a relatively large charge conduction in the bulk. One way to reduce the bulk contribution and to increase surface-to-volume ratio is by nanostructuring. Here we report on the synthesis and characterization of Sb2Te3, Bi2Te3 nanowires and nanotubes and Sb2Te3/Bi2Te3 heterojunctions electrochemically grown in porous anodic aluminum oxide (AAO) membranes with varied (from 50 to 150 nm) pore diameters. Stoichiometric rigid polycrystalline nanowires with controllable cross-sections were obtained using cell voltages in the 30 - 150 mV range. Transport measurements in up to 14 T magnetic fields applied along the nanowires show Aharonov-Bohm (A-B) quantum oscillations with periods corresponding to the nanowire diameters. All nanowires were found to exhibit sharp weak anti-localization (WAL) cusps, a characteristic signature of TIs. In addition to A-B oscillations, new quantization plateaus in magnetoresistance (MR) at low fields (< 0 . 7T) were observed. The analysis of MR as well as I - V characteristics of heterojunctions will be presented. Supported in part by NSF-DMR-1122594, NSF-DMR-1312483-MWN, and DOD-W911NF-13-1-0159.

  10. Structural and electronic properties of Pt induced nanowires on Ge(110)

    Zhang, L.; Bampoulis, P.; Safaei, A.; Zandvliet, H.J.W.; Houselt, A. van, E-mail: A.vanHouselt@utwente.nl

    2016-11-30

    Highlights: • Deposition of Pt induces regularly spaced (1.13 nm, 1.97 nm and 3.38 nm) nanowires on Ge(110). • In the troughs between the wires spaced 6× the Ge lattice consant pentagons are observed. • Spatially resolved STS reveals a filled electronic state at −0.35 eV. • This state has its highest intensity above the pentagons. • For 2 ML Pt, nanowires coexist with PtGe clusters, which become liquid like above 1040 K. - Abstract: The structural and electronic properties of Pt induced nanowires on Ge(110) surfaces have been studied by scanning tunneling microscopy and low energy electron microscopy. The deposition of a sub-monolayer amount of Pt and subsequent annealing at 1100 (±30) K results into nanowires which are aligned along the densely packed [1–10] direction of the Ge(110) surface. With increasing Pt coverage the nanowires form densely packed arrays with separations of 1.1 ± 0.1 nm, 2.0 ± 0.1 nm and 3.4 ± 0.1 nm. Ge pentagons reside in the troughs for nanowire separations of 3.4 nm, however for smaller nanowire separations no pentagons are found. Spatially resolved scanning tunneling spectroscopy measurements reveal a filled electronic state at −0.35 eV. This electronic state is present in the troughs as well as on the nanowires. The −0.35 eV state has the strongest intensity on the pentagons. For Pt depositions exceeding two monolayers, pentagon free nanowire patches are found, that coexist with Pt/Ge clusters. Upon annealing at 1040 K these Pt/Ge clusters become liquid-like, indicating that we are dealing with eutectic Pt{sub 0.22}Ge{sub 0.78} clusters. Low energy electron microscopy videos reveal the formation and spinodal decomposition of these eutectic Pt/Ge clusters.

  11. The role of substrate surface alteration in the fabrication of vertically aligned CdTe nanowires

    Neretina, S; Devenyi, G A; Preston, J S; Mascher, P; Hughes, R A; Sochinskii, N V

    2008-01-01

    Previously we have described the deposition of vertically aligned wurtzite CdTe nanowires derived from an unusual catalytically driven growth mode. This growth mode could only proceed when the surface of the substrate was corrupted with an alcohol layer, although the role of the corruption was not fully understood. Here, we present a study detailing the remarkable role that this substrate surface alteration plays in the development of CdTe nanowires; it dramatically improves the size uniformity and largely eliminates lateral growth. These effects are demonstrated to arise from the altered surface's ability to limit Ostwald ripening of the catalytic seed material and by providing a surface unable to promote the epitaxial relationship needed to sustain a lateral growth mode. The axial growth of the CdTe nanowires is found to be exclusively driven through the direct impingement of adatoms onto the catalytic seeds leading to a self-limiting wire height associated with the sublimation of material from the sidewall facets. The work presented furthers the development of the mechanisms needed to promote high quality substrate-based vertically aligned CdTe nanowires. With our present understanding of the growth mechanism being a combination of selective area epitaxy and a catalytically driven vapour-liquid-solid growth mode, these results also raise the intriguing possibility of employing this growth mode in other material systems in an effort to produce superior nanowires

  12. Selective-area vapour-liquid-solid growth of InP nanowires

    Dalacu, Dan; Kam, Alicia; Guy Austing, D; Wu Xiaohua; Lapointe, Jean; Aers, Geof C; Poole, Philip J

    2009-01-01

    A comparison is made between the conventional non-selective vapour-liquid-solid growth of InP nanowires and a novel selective-area growth process where the Au-seeded InP nanowires grow exclusively in the openings of a SiO 2 mask on an InP substrate. This new process allows the precise positioning and diameter control of the nanowires required for future advanced device fabrication. The growth temperature range is found to be extended for the selective-area growth technique due to removal of the competition between material incorporation at the Au/nanowire interface and the substrate. A model describing the growth mechanism is presented which successfully accounts for the nanoparticle size-dependent and time-dependent growth rate. The dominant indium collection process is found to be the scattering of the group III source material from the SiO 2 mask and subsequent capture by the nanowire, a process that had previously been ignored for selective-area growth by chemical beam epitaxy.

  13. Selective-area vapour-liquid-solid growth of InP nanowires

    Dalacu, Dan; Kam, Alicia; Guy Austing, D; Wu Xiaohua; Lapointe, Jean; Aers, Geof C; Poole, Philip J, E-mail: dan.dalacu@nrc-cnrc.gc.c [Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, K1A 0R6 (Canada)

    2009-09-30

    A comparison is made between the conventional non-selective vapour-liquid-solid growth of InP nanowires and a novel selective-area growth process where the Au-seeded InP nanowires grow exclusively in the openings of a SiO{sub 2} mask on an InP substrate. This new process allows the precise positioning and diameter control of the nanowires required for future advanced device fabrication. The growth temperature range is found to be extended for the selective-area growth technique due to removal of the competition between material incorporation at the Au/nanowire interface and the substrate. A model describing the growth mechanism is presented which successfully accounts for the nanoparticle size-dependent and time-dependent growth rate. The dominant indium collection process is found to be the scattering of the group III source material from the SiO{sub 2} mask and subsequent capture by the nanowire, a process that had previously been ignored for selective-area growth by chemical beam epitaxy.

  14. Three-dimensional electrodes for dye-sensitized solar cells: synthesis of indium-tin-oxide nanowire arrays and ITO/TiO2 core-shell nanowire arrays by electrophoretic deposition

    Wang, H-W; Ting, C-F; Hung, M-K; Chiou, C-H; Liu, Y-L; Liu Zongwen; Ratinac, Kyle R; Ringer, Simon P

    2009-01-01

    Dye-sensitized solar cells (DSSCs) show promise as a cheaper alternative to silicon-based photovoltaics for specialized applications, provided conversion efficiency can be maximized and production costs minimized. This study demonstrates that arrays of nanowires can be formed by wet-chemical methods for use as three-dimensional (3D) electrodes in DSSCs, thereby improving photoelectric conversion efficiency. Two approaches were employed to create the arrays of ITO (indium-tin-oxide) nanowires or arrays of ITO/TiO 2 core-shell nanowires; both methods were based on electrophoretic deposition (EPD) within a polycarbonate template. The 3D electrodes for solar cells were constructed by using a doctor-blade for coating TiO 2 layers onto the ITO or ITO/TiO 2 nanowire arrays. A photoelectric conversion efficiency as high as 4.3% was achieved in the DSSCs made from ITO nanowires; this performance was better than that of ITO/TiO 2 core-shell nanowires or pristine TiO 2 films. Cyclic voltammetry confirmed that the reaction current was significantly enhanced when a 3D ITO-nanowire electrode was used. Better separation of charge carriers and improved charge transport, due to the enlarged interfacial area, are thought to be the major advantages of using 3D nanowire electrodes for the optimization of DSSCs.

  15. Gold nanowires and the effect of impurities

    Novaes Frederico

    2006-01-01

    Full Text Available AbstractMetal nanowires and in particular gold nanowires have received a great deal of attention in the past few years. Experiments on gold nanowires have prompted theory and simulation to help answer questions posed by these studies. Here we present results of computer simulations for the formation, evolution and breaking of very thin Au nanowires. We also discuss the influence of contaminants, such as atoms and small molecules, and their effect on the structural and mechanical properties of these nanowires.

  16. Micromagnetic simulations of cylindrical magnetic nanowires

    Ivanov, Yurii P.

    2015-05-27

    This chapter reviews micromagnetic simulations of cylindrical magnetic nanowires and their ordered arrays. It starts with a description of the theoretical background of micromagnetism. The chapter discusses main magnetization reversal modes, domain wall types, and state diagrams in cylindrical nanowires of different types and sizes. The results of the hysteresis process in individual nanowires and nanowire arrays also are presented. Modeling results are compared with experimental ones. The chapter also discusses future trends in nanowire applications in relation to simulations, such as current-driven dynamics, spintronics, and spincaloritronics. The main micromagnetic programs are presented and discussed, together with the corresponding links.

  17. Ballistic superconductivity in semiconductor nanowires

    Zhang, Hao; Gül, Önder; Conesa-Boj, Sonia; Nowak, Michał P.; Wimmer, Michael; Zuo, Kun; Mourik, Vincent; de Vries, Folkert K.; van Veen, Jasper; de Moor, Michiel W. A.; Bommer, Jouri D. S.; van Woerkom, David J.; Car, Diana; Plissard, Sébastien R; Bakkers, Erik P.A.M.; Quintero-Pérez, Marina; Cassidy, Maja C.; Koelling, Sebastian; Goswami, Srijit; Watanabe, Kenji; Taniguchi, Takashi; Kouwenhoven, Leo P.

    2017-01-01

    Semiconductor nanowires have opened new research avenues in quantum transport owing to their confined geometry and electrostatic tunability. They have offered an exceptional testbed for superconductivity, leading to the realization of hybrid systems combining the macroscopic quantum properties of superconductors with the possibility to control charges down to a single electron. These advances brought semiconductor nanowires to the forefront of efforts to realize topological superconductivity and Majorana modes. A prime challenge to benefit from the topological properties of Majoranas is to reduce the disorder in hybrid nanowire devices. Here we show ballistic superconductivity in InSb semiconductor nanowires. Our structural and chemical analyses demonstrate a high-quality interface between the nanowire and a NbTiN superconductor that enables ballistic transport. This is manifested by a quantized conductance for normal carriers, a strongly enhanced conductance for Andreev-reflecting carriers, and an induced hard gap with a significantly reduced density of states. These results pave the way for disorder-free Majorana devices. PMID:28681843

  18. Arsenic Sulfide Nanowire Formation on Fused Quartz Surfaces

    Olmstead, J.; Riley, B.J.; Johnson, B.R.; Sundaram, S.K.

    2005-01-01

    Arsenic sulfide (AsxSy) nanowires were synthesized by an evaporation-condensation process in evacuated fused quartz ampoules. During the deposition process, a thin, colored film of AsxSy was deposited along the upper, cooler portion of the ampoule. The ampoule was sectioned and the deposited film analyzed using scanning electron microscopy (SEM) to characterize and semi-quantitatively evaluate the microstructural features of the deposited film. A variety of microstructures were observed that ranged from a continuous thin film (warmer portion of the ampoule), to isolated micron- and nano-scale droplets (in the intermediate portion), as well as nanowires (colder portion of the ampoule). Experiments were conducted to evaluate the effects of ampoule cleaning methods (e.g. modify surface chemistry) and quantity of source material on nanowire formation. The evolution of these microstructures in the thin film was determined to be a function of initial pressure, substrate temperature, substrate surface treatment, and initial volume of As2S3 glass. In a set of two experiments where the initial pressure, substrate thermal gradient, and surface treatment were the same, the initial quantity of As2S3 glass per internal ampoule volume was doubled from one test to the other. The results showed that AsxSy nanowires were only formed in the test with the greater initial quantity of As2S3 per internal ampoule volume. The growth data for variation in diameter (e.g. nanowire or droplet) as a function of substrate temperature was fit to an exponential trendline with the form y = Aekx, where y is the structure diameter, A = 1.25×10-3, k = 3.96×10-2, and x is the temperature with correlation coefficient, R2 = 0.979, indicating a thermally-activated process.

  19. The Pauli Exclusion Principle

    his exclusion principle, the quantum theory was a mess. Moreover, it could ... This is a function of all the coordinates and 'internal variables' such as spin, of all the ... must remain basically the same (ie change by a phase factor at most) if we ...

  20. Exclusive Production at CMS

    Walczak, Marek

    2016-01-01

    I briefly introduce so-called central exclusive production. I mainly focus on the example analyses that have been performed in the CMS experiment at CERN. I conclude with ideas and perspectives for future work that will be done during Run 2 of the LHC. I pay special attention to the ultraperipheral collisions.

  1. Ombuds' Corner: Social exclusion

    Vincent Vuillemin

    2012-01-01

    In this special video edition of the Ombuds' Corner, Vincent Vuillemin takes a look at a social exclusion at CERN. Please note that the characters and situations appearing in this work are fictitious, and any resemblance to real persons or events is purely coincidental.   Contact the Ombuds Early!

  2. Social exclusion of children

    Annette Roest; Anne Marike Lokhorst; Cok Vrooman

    2010-01-01

    Original title: Sociale uitsluiting bij kinderen. Combating social exclusion of children is a subject that has received growing attention in Dutch government policy in recent years. To date, however, no analysis has been performed to ascertain the extent and origins of this phenomenon. This

  3. Growth and applicability of radiation-responsive silica nanowires

    Bettge, Martin

    Surface energetics play an important role in processes on the nanoscale. Nanowire growth via vapor-liquid-solid (VLS) mechanism is no exception in this regard. Interfacial and line energies are found to impose some fundamental limits during three-phase nanowire growth and lead to formation of stranded nanowires with fascinating characteristics such as high responsiveness towards ion irradiation. By using two materials with a relatively low surface energy (indium and silicon oxide) this is experimentally and theoretically demonstrated in this doctoral thesis. The augmentation of VLS nanowire growth with ion bombardment enables fabrication of vertically aligned silica nanowires over large areas. Synthesis of their arrays begins with a thin indium film deposited on a Si or SiO 2 surface. At temperatures below 200ºC, the indium film becomes a self-organized seed layer of molten droplets, receiving a flux of atomic silicon by DC magnetron sputtering. Simultaneous vigorous ion bombardment through substrate biasing aligns the growing nanowires vertically and expedites mixing of oxygen and silicon into the indium. The vertical growth rate can reach up to 1000 nm-min-1 in an environment containing only argon and traces of water vapor. Silicon oxide precipitates from each indium seed in the form of multiple thin strands having diameters less than 9 nm and practically independent of droplet size. The strands form a single loose bundle, eventually consolidating to form one vertically aligned nanowire. These observations are in stark contrast to conventional VLS growth in which one liquid droplet precipitates a single solid nanowire and in which the precipitated wire diameter is directly proportional to the droplet diameter. The origin of these differences is revealed through a detailed force balance analysis, analogous to Young's relation, at the three-phase line. The liquid-solid interfacial energy of indium/silica is found to be the largest energy contribution at the three

  4. Polymer-electrolyte-gated nanowire synaptic transistors for neuromorphic applications

    Zou, Can; Sun, Jia; Gou, Guangyang; Kong, Ling-An; Qian, Chuan; Dai, Guozhang; Yang, Junliang; Guo, Guang-hua

    2017-09-01

    Polymer-electrolytes are formed by dissolving a salt in polymer instead of water, the conducting mechanism involves the segmental motion-assisted diffusion of ion in the polymer matrix. Here, we report on the fabrication of tin oxide (SnO2) nanowire synaptic transistors using polymer-electrolyte gating. A thin layer of poly(ethylene oxide) and lithium perchlorate (PEO/LiClO4) was deposited on top of the devices, which was used to boost device performances. A voltage spike applied on the in-plane gate attracts ions toward the polymer-electrolyte/SnO2 nanowire interface and the ions are gradually returned after the pulse is removed, which can induce a dynamic excitatory postsynaptic current in the nanowire channel. The SnO2 synaptic transistors exhibit the behavior of short-term plasticity like the paired-pulse facilitation and self-adaptation, which is related to the electric double-effect regulation. In addition, the synaptic logic functions and the logical function transformation are also discussed. Such single SnO2 nanowire-based synaptic transistors are of great importance for future neuromorphic devices.

  5. Design and fabrication of Ni nanowires having periodically hollow nanostructures.

    Sada, Takao; Fujigaya, Tsuyohiko; Nakashima, Naotoshi

    2014-10-07

    We propose a concept for the design and fabrication of metal nanowires having periodically hollow nanostructures inside the pores of an anodic aluminum oxide (AAO) membrane using a sacrificial metal. In this study, nickel (Ni) and silver (Ag) were used as the base metal and the sacrificial metal, respectively. Alternating an applied potential between -0.4 and -1.0 V provided alternatively deposited Ni and Ag segments in a Ni-Ag 'barcode' nanowire with a diameter of 18 or 35 nm. After etching away the Ag segments, we fabricated Ni nanowires with nanopores of 12 ± 5.3 nm. Such nanostructure formation is explained by the formation of a Ni shell layer over the surface of the Ag segments due to the strong affinity of Ni(2+) for the interior surfaces of AAO. The Ni shell layer allows the Ni segments to remain even after dissolution of the Ag segments. Because the electroplating conditions can be easily controlled, we could carefully adjust the size and pitch of the periodically hollow nanospaces. We also describe a method for the fabrication of Ni nanorods by forming an Ag shell instead of a Ni shell on the Ni-Ag barcode nanowire, in which the interior of the AAO surfaces was modified with a compound bearing a thiol group prior to electroplating.

  6. Effect of surface oxide on the melting behavior of lead-free solder nanowires and nanorods

    Gao Fan; Rajathurai, Karunaharan; Cui, Qingzhou; Zhou, Guangwen; NkengforAcha, Irene; Gu Zhiyong

    2012-01-01

    Lead-free nanosolders have shown promise in nanowire and nanoelectronics assembly. Among various important parameters, melting is the most fundamental property affecting the assembly process. Here we report that the melting behavior of tin and tin/silver nanowires and nanorods can be significantly affected by the surface oxide of nanosolders. By controlling the nanosolder reflow atmosphere using a flux, the surface oxide of the nanowires/nanorods can be effectively removed and complete nanosolder melting can be achieved. The complete melting of the nanosolders leads to the formation of nanoscale to microscale spherical solder balls, followed by Ostwald ripening phenomenon. The contact angle of the microscale solder balls formed on Si substrate was measured by direct electron microscopic imaging. These results provide new insights into micro- and nanoscale phase transition and liquid droplet coalescence from nanowires/nanorods to spheroids, and are relevant to nanoscale assembly and smaller ball grid array formation.

  7. Directed deposition of silicon nanowires using neopentasilane as precursor and gold as catalyst

    Britta Kämpken

    2012-07-01

    Full Text Available In this work the applicability of neopentasilane (Si(SiH34 as a precursor for the formation of silicon nanowires by using gold nanoparticles as a catalyst has been explored. The growth proceeds via the formation of liquid gold/silicon alloy droplets, which excrete the silicon nanowires upon continued decomposition of the precursor. This mechanism determines the diameter of the Si nanowires. Different sources for the gold nanoparticles have been tested: the spontaneous dewetting of gold films, thermally annealed gold films, deposition of preformed gold nanoparticles, and the use of “liquid bright gold”, a material historically used for the gilding of porcelain and glass. The latter does not only form gold nanoparticles when deposited as a thin film and thermally annealed, but can also be patterned by using UV irradiation, providing access to laterally structured layers of silicon nanowires.

  8. A Facile Fabrication of Silver-Coated Copper Nanowires by Galvanic Replacement

    Xin He

    2016-01-01

    Full Text Available We demonstrated a general strategy to fabricate silver-coated copper nanowires by a galvanic replacement, which is guided by the chemical principle that metal ions (silver ions with a relatively high reduction potential can galvanically etch nanostructure made from a less metal (copper. Well-dispersed and high-yielded copper nanowires were initially synthesized and then introduced into silver-ammonia solution for the growth of silver nanocrystals on the nanowire surfaces under vigorous oscillation. The results of X-ray diffraction, scanning electron microscope, and transmission electron microscope revealed that the silver nanocrystals were uniformly distributed on the copper nanowire surfaces to form Cu-Ag heterostructures. The concentration of silver-ammonia solution and the time of replacement reaction determine the size and density of the silver nanocrystals. Our investigation might pave the way to the synthesis of other bimetallic nanostructures via a facile, fast, and economical route.

  9. Control of the ZnO nanowires nucleation site using microfluidic channels.

    Lee, Sang Hyun; Lee, Hyun Jung; Oh, Dongcheol; Lee, Seog Woo; Goto, Hiroki; Buckmaster, Ryan; Yasukawa, Tomoyuki; Matsue, Tomokazu; Hong, Soon-Ku; Ko, HyunChul; Cho, Meoung-Whan; Yao, Takafumi

    2006-03-09

    We report on the growth of uniquely shaped ZnO nanowires with high surface area and patterned over large areas by using a poly(dimethylsiloxane) (PDMS) microfluidic channel technique. The synthesis uses first a patterned seed template fabricated by zinc acetate solution flowing though a microfluidic channel and then growth of ZnO nanowire at the seed using thermal chemical vapor deposition on a silicon substrate. Variations the ZnO nanowire by seed pattern formed within the microfluidic channel were also observed for different substrates and concentrations of the zinc acetate solution. The photocurrent properties of the patterned ZnO nanowires with high surface area, due to their unique shape, were also investigated. These specialized shapes and patterning technique increase the possibility of realizing one-dimensional nanostructure devices such as sensors and optoelectric devices.

  10. Large-area fabrication of patterned ZnO-nanowire arrays using light stamping lithography.

    Hwang, Jae K; Cho, Sangho; Seo, Eun K; Myoung, Jae M; Sung, Myung M

    2009-12-01

    We demonstrate selective adsorption and alignment of ZnO nanowires on patterned poly(dimethylsiloxane) (PDMS) thin layers with (aminopropyl)siloxane self-assembled monolayers (SAMs). Light stamping lithography (LSL) was used to prepare patterned PDMS thin layers as neutral passivation regions on Si substrates. (3-Aminopropyl)triethoxysilane-based SAMs were selectively formed only on regions exposing the silanol groups of the Si substrates. The patterned positively charged amino groups define and direct the selective adsorption of ZnO nanowires with negative surface charges in the protic solvent. This procedure can be adopted in automated printing machines that generate patterned ZnO-nanowire arrays on large-area substrates. To demonstrate its usefulness, the LSL method was applied to prepare ZnO-nanowire transistor arrays on 4-in. Si wafers.

  11. Facile synthesis of polypyrrole nanowires for high-performance supercapacitor electrode materials

    Junhong Zhao

    2016-06-01

    Full Text Available Polypyrrole nanowires are facile synthesized under a mild condition with FeCl3 as an oxidant. Polypyrrole nanowires with the width of 120 nm form many nanogaps or pores due to the intertwined nanostructures. More importantly, PPy nanowires were further applied for supercapacitor electrode materials. After electrochemical testing, it was observed that the PPy nanowire based electrode showed a large specific capacitance (420 F g−1, 1.5 A g−1 and good rate capability (272 F g−1, 18.0 A g−1, which is larger than that of most of published results. The as-prepared electrode can work well even after 8000 cycles at 1.5 A g−1.

  12. Size and temperature dependent stability and phase transformation in single-crystal zirconium nanowire

    Sutrakar, Vijay Kumar; Roy Mahapatra, D.

    2011-01-01

    A novel size dependent FCC (face-centered-cubic) → HCP (hexagonally-closed-pack) phase transformation and stability of an initial FCC zirconium nanowire are studied. FCC zirconium nanowires with cross-sectional dimensions 20 Å, in which surface stresses are not enough to drive the phase transformation, show meta-stability. In such a case, an external kinetic energy in the form of thermal heating is required to overcome the energy barrier and achieve FCC → HCP phase transformation. The FCC-HCP transition pathway is also studied using Nudged Elastic Band (NEB) method, to further confirm the size dependent stability/metastability of Zr nanowires. We also show size dependent critical temperature, which is required for complete phase transformation of a metastable-FCC nanowire.

  13. Controlled synthesis of uniform ultrafine CuO nanowires as anode material for lithium-ion batteries

    Wang Fei; Tao Weizhe; Zhao Mingshu; Xu Minwei; Yang Shengchun; Sun Zhanbo; Wang Liqun; Song Xiaoping

    2011-01-01

    Highlights: → The ultrafine CuO nanowires were controlled synthesized by a simple solution route. → CuO nanowires exhibit high capacity, superior cyclability and improved rate capability. → Voltage-capacity curves show larger extra reversible reactions at low potentials in CuO nanowires. → CV curves show lower over-potential in CuO nanowires. - Abstract: A simple solution route is used to synthesize ultrafine Cu(OH) 2 nanowires by restraining the morphology transformation of early formed 1D nanostructure. The obtained ultrafine nanowires can be well preserved at a low temperature structure transformation in solid state. As anode material for lithium-ion batteries, the ultrafine CuO nanowires exhibit high reversible capacity, superior cycling performance and improved rate capability. The improved electrochemical properties of CuO nanowires are ascribed to their ultrafine size which lead to the reduced over-potential, extra reversible reactions at low potentials and improved interface performance between the electrode and electrolyte.

  14. Effects of polymer surface energy on morphology and properties of silver nanowire fabricated via nanoimprint and E-beam evaporation

    Zhao, Zhi-Jun; Hwang, Soon Hyoung; Jeon, Sohee; Jung, Joo-Yun; Lee, Jihye; Choi, Dae-Geun; Choi, Jun-Hyuk; Park, Sang-Hu; Jeong, Jun-Ho

    2017-10-01

    In this paper, we demonstrate that use of different nanoimprint resins as a polymer pattern has a significant effect on the morphology of silver (Ag) nanowires deposited via an E-beam evaporator. RM-311 and Ormo-stamp resins are chosen as a polymer pattern to form a line with dimensions of width (100 nm) × space (100 nm) × height (120 nm) by using nanoimprint lithography (NIL). Their contact angles are then measured to evaluate their surface energies. In order to compare the properties of the Ag nanowires deposited on the various polymer patterns with different surface energies, hydrophobic surface treatment of the polymer pattern surface is implemented using self-assembled monolayers. In addition, gold and aluminum nanowires are fabricated for comparison with the Ag nanowires, with the differences in the nanowire morphologies being determined by the different atomic properties. The monocrystalline and polycrystalline structures of the various Ag nanowire formations are observed using transmission electron microscopy. In addition, the melting temperatures and optical properties of four kinds of Ag nanowire morphologies deposited on various polymer patterns are evaluated using a hot plate and an ultraviolet-visible (UV-vis) spectrometer, respectively. The results indicate that the morphology of the Ag nanowire determines the melting temperature and the transmission. We believe that these findings will greatly aid the development of NIL, along with physical evaporation and chemical deposition techniques, and will be widely employed in optics, biology, and surface wettability applications.

  15. Electrically Injected UV-Visible Nanowire Lasers

    Wang, George T.; Li, Changyi; Li, Qiming; Liu, Sheng; Wright, Jeremy Benjamin; Brener, Igal; Luk, Ting -Shan; Chow, Weng W.; Leung, Benjamin; Figiel, Jeffrey J.; Koleske, Daniel D.; Lu, Tzu-Ming

    2015-09-01

    There is strong interest in minimizing the volume of lasers to enable ultracompact, low-power, coherent light sources. Nanowires represent an ideal candidate for such nanolasers as stand-alone optical cavities and gain media, and optically pumped nanowire lasing has been demonstrated in several semiconductor systems. Electrically injected nanowire lasers are needed to realize actual working devices but have been elusive due to limitations of current methods to address the requirement for nanowire device heterostructures with high material quality, controlled doping and geometry, low optical loss, and efficient carrier injection. In this project we proposed to demonstrate electrically injected single nanowire lasers emitting in the important UV to visible wavelengths. Our approach to simultaneously address these challenges is based on high quality III-nitride nanowire device heterostructures with precisely controlled geometries and strong gain and mode confinement to minimize lasing thresholds, enabled by a unique top-down nanowire fabrication technique.

  16. Nanowire failure: long = brittle and short = ductile.

    Wu, Zhaoxuan; Zhang, Yong-Wei; Jhon, Mark H; Gao, Huajian; Srolovitz, David J

    2012-02-08

    Experimental studies of the tensile behavior of metallic nanowires show a wide range of failure modes, ranging from ductile necking to brittle/localized shear failure-often in the same diameter wires. We performed large-scale molecular dynamics simulations of copper nanowires with a range of nanowire lengths and provide unequivocal evidence for a transition in nanowire failure mode with change in nanowire length. Short nanowires fail via a ductile mode with serrated stress-strain curves, while long wires exhibit extreme shear localization and abrupt failure. We developed a simple model for predicting the critical nanowire length for this failure mode transition and showed that it is in excellent agreement with both the simulation results and the extant experimental data. The present results provide a new paradigm for the design of nanoscale mechanical systems that demarcates graceful and catastrophic failure. © 2012 American Chemical Society

  17. Diameter-dependent coloration of silver nanowires

    Stewart, Mindy S; Qiu Chao; Jiang Chaoyang; Kattumenu, Ramesh; Singamaneni, Srikanth

    2011-01-01

    Silver nanowires were synthesized with a green method and characterized with microscopic and diffractometric methods. The correlation between the colors of the nanowires deposited on a solid substrate and their diameters was explored. Silver nanowires that appear similar in color in the optical micrographs have very similar diameters as determined by atomic force microscopy. We have summarized the diameter-dependent coloration for these silver nanowires. An optical interference model was applied to explain such correlation. In addition, microreflectance spectra were obtained from individual nanowires and the observed spectra can be explained with the optical interference theory. This work provides a cheap, quick and simple screening method for studying the diameter distribution of silver nanowires, as well as the diameter variations of individual silver nanowires, without complicated sample preparation.

  18. Fabrication of silver nanowires via a β-cyclodextrin-derived soft template

    C. Y. Liu

    2018-07-01

    Full Text Available Supramolecular β-cyclodextrin (β-CD was used as a soft template for the fabrication of long silver nanowires. A novel design using self-assembled β-CD for the reduction of silver ions was studied. The concentrations of iron chloride, silver nitrate, and the template were controlling factors for the growth of the silver nanowires. Iron chloride was used to accelerate and facilitate the formation of the silver nanowires and inhibit oxidative etching. However, an excessive concentration of Fe+3 resulted in etching of the silver nanostructures. Furthermore, the silver concentration was another controlling factor. The length of the silver nanowires increased as the concentration of silver cations increased. Nevertheless, an excess concentration of silver cations formed various silver crystalline structures. In this study, the optimal ratio between iron chloride and silver nitrate was determined to be 1:13.3. A maximum length of 20 µm was achieved using a concentration of 0.23 M for the soft template. Moreover, the junction of two growing silver nanowires was observed, forming a long fused nanowire, and some significant boundaries were observed. The observed results were further confirmed using scanning electron microscopy (SEM and transmission electron microscopy (TEM analyses. X-ray diffraction (XRD and energy dispersive spectrometer (EDS analyses were used to indicate the presence of silver and the formation of crystalline materials.

  19. Inkjet-printed transparent nanowire thin film features for UV photodetectors

    Chen, Shih Pin

    2015-01-01

    In this study, a simple and effective direct printing method was developed to print patterned nanowire thin films for UV detection. Inks containing silver or titanium dioxide (TiO2) nanowires were first formulated adequately to form stable suspension for inkjet printing applications. Sedimentation tests were also carried out to characterize the terminal velocity and dispersion stability of nanowires to avoid potential nozzle clogging problems. The well-dispersed silver nanowire ink was then inkjet printed on PET films to form patterned electrodes. Above the electrodes, another layer of TiO2 nanowires was also printed to create a highly transparent photodetector with >80% visible transmittance. The printed photodetector showed a fairly low dark current of 10-12-10-14 A with a high on/off ratio of 2000 to UV radiation. Under a bias voltage of 2 V, the detector showed fast responses to UV illumination with a rise time of 0.4 s and a recovery time of 0.1 s. More photo currents can also be collected with a larger printed electrode area. In summary, this study shows the feasibility of applying inkjet printing technology to create nanowire thin films with specific patterns, and can be further employed for photoelectric applications. © The Royal Society of Chemistry 2015.

  20. Fabrication of isolated platinum nanowire gratings and nanoparticles on silica substrate by femtosecond laser irradiation

    Nakajima, Yasutaka [School of Integrated Design Engineering, Keio University, 3-14-1, Hiyoshi, Kohoku-ku, Yokohama 223- 8522 (Japan); Nedyalkov, Nikolay [Institute of Electronics, Bulgarian Academy of Sciences, Tzarigradsko shouse 72, Sofia 1784 (Bulgaria); Department of Electronics and Electrical Engineering, Keio University, 3-14-1, Hiyoshi, Kohoku-ku, Yokohama, 223-8522 (Japan); Takami, Akihiro [School of Integrated Design Engineering, Keio University, 3-14-1, Hiyoshi, Kohoku-ku, Yokohama 223- 8522 (Japan); Terakawa, Mitsuhiro, E-mail: terakawa@elec.keio.ac.jp [School of Integrated Design Engineering, Keio University, 3-14-1, Hiyoshi, Kohoku-ku, Yokohama 223- 8522 (Japan); Department of Electronics and Electrical Engineering, Keio University, 3-14-1, Hiyoshi, Kohoku-ku, Yokohama, 223-8522 (Japan)

    2017-02-01

    Highlights: • Formation of HSFL with periodicities shorter than 100 nm. • Structural evolution from platinum nanowire gratings to platinum nanoparticles only by increasing the number of pulses. • Melting and fragmentation of the nanowire gratings would play a key role in structural evolution. - Abstract: We demonstrate the fabrication of isolated platinum nanostructures on a silica substrate by using femtosecond laser. Nanowire gratings which have short periodicities of approximately 50 nm were formed by irradiating a platinum thin film deposited on a fused silica substrate with 800-nm wavelength femtosecond laser pulses. The structural evolution from the nanowire gratings to nanoparticles was observed only by increasing the number of pulses. The periodicities or diameters of the structures showed good uniformity. Scanning electron microscopy of the surfaces and theoretical calculation of temperature profile using a two-temperature model revealed that the structural evolution can be attributed to the fragmentation of the formed nanowires. The presented method provides a simple and high-throughput technique for fabricating both metal nanowire gratings and nanoparticles, which have the potential to be used for the fabrication of optical, electrical and biomedical devices.

  1. Tunneling magnetoresistance in Si nanowires

    Montes Muñoz, Enrique

    2016-11-09

    We investigate the tunneling magnetoresistance of small diameter semiconducting Si nanowires attached to ferromagnetic Fe electrodes, using first principles density functional theory combined with the non-equilibrium Green\\'s functions method for quantum transport. Silicon nanowires represent an interesting platform for spin devices. They are compatible with mature silicon technology and their intrinsic electronic properties can be controlled by modifying the diameter and length. Here we systematically study the spin transport properties for neutral nanowires and both n and p doping conditions. We find a substantial low bias magnetoresistance for the neutral case, which halves for an applied voltage of about 0.35 V and persists up to 1 V. Doping in general decreases the magnetoresistance, as soon as the conductance is no longer dominated by tunneling.

  2. Preparation and characterization of titania based nanowires

    Stengl, Vaclav; Bakardjieva, Snejana; Murafa, Natalie; Vecernikova, Eva; Subrt, Jan; Balek, Vladimir

    2007-01-01

    A new method for preparation of titania nanowires with diameter around 10 nm and length up to 2-3 μm is described. The precursor was prepared from sodium titanate by adding ethylene glycole (EG) and heating at temperature of 198 deg. C for 6 h under reflux. The sodium titanate glycolate formed by this way aggregated into 1D nanostructures and was subsequently transformed into titania glycolate during a chemical treatment with 98% sulfuric acid. Titania nanowires with variable amount of anatase and rutile were prepared by heating to temperatures in the range 350-1000 deg. C. The precursor as well as titania based samples were characterized by X-ray diffraction, Infrared spectroscopy, Scanning electron microscopy, High resolution transmission microscopy, Thermogravimetry, Differential thermal analysis, Evolved gas analysis and Emanation thermal analysis. The nitrogen adsorption/desorption was used for surface area and porosity determination. The photoactivity of the prepared titania samples was assessed by the photocatalytic decomposition of 4-chlorophenol in an aqueous slurry under UV irradiation of 365 nm wavelength

  3. Coaxial silver nanowire network core molybdenum oxide shell supercapacitor electrodes

    Yuksel, Recep; Coskun, Sahin; Unalan, Husnu Emrah

    2016-01-01

    We present a new hybrid material composed of molybdenum (IV) oxide (MoO 2 ) shell on highly conducting silver nanowire (Ag NW) core in the network form for the realization of coaxial Ag NW/MoO 2 nanocomposite supercapacitor electrodes. Ag NWs were simply spray coated onto glass substrates to form conductive networks and conformal MoO 2 layer was electrodeposited onto the Ag NW network to create binder-free coaxial supercapacitor electrodes. Combination of Ag NWs and pseudocapacitive MoO 2 generated an enhanced electrochemical energy storage capacity and a specific capacitance of 500.7 F/g was obtained at a current density of 0.25 A/g. Fabricated supercapacitor electrodes showed excellent capacity retention after 5000 cycles. The methods and the design investigated herein open a wide range of opportunities for nanowire based coaxial supercapacitors.

  4. Growth of uranyl hydroxide nanowires and nanotubes with electrodeposition method

    Wang Lin; Yuan Liyong; Chai Zhifang; Shi Weiqun

    2013-01-01

    Actinides nanomaterials have great potential applications in fabrication of novel nuclear fuel and spent fuel reprocessing in advanced nuclear energy system. However, the relative research so far still lacks systematic investigation on the synthetic methods for actinides nanomaterials. In this work, we use track-etched membranes as hard templates to synthesize uranium based nanomaterials with novel structures by electrodeposition method. Through electrochemical behavior investigations and subsequent product characterizations such as energy dispersive spectrometer (EDS), fourier transform infrared spectroscopy (FTIR), the chemical composition of deposition products have been confirmed as the uranyl hydroxide. More importantly, accurate control of morphology and structures (nanowires and nanotubes) could be achieved by carefully adjusting the growth parameters such as deposition time and deposition current density. It was found that the preferred morphology of electrodeposition products is nanowire when a low current density was applied, whereas nanotubes could be formed only under conditions of high current density and the short deposition time. The mechanism for the formation of nanowires in track-etched membranes is based on the precipitation of uranyl hydroxide from uranyl nitrate solution, according to the previous researches about obtaining nanostructures of hydroxides from nitrate salt solutions. And we have concluded that the formation of nanotubes is attributed to the hydrogen bubbles generated by water electrolysis under the condition of over-potential electro-reduction. The conveying of hydrogen bubbles plays the role of dynamic template which can prevent the complete filling of uranyl hydroxide in the channels. Additionally, we transform the chemical composition of deposition products from uranyl hydroxide to triuranium octoxide by calcining them at 500 and 800 degree centigrade, respectively, and SEM results show the morphologies of nanowires and

  5. The psychology of exclusivity

    Troy Jollimore

    2008-02-01

    Full Text Available Friendship and romantic love are, by their very nature, exclusive relationships. This paper suggests that we can better understand the nature of the exclusivity in question by understanding what is wrong with the view of practical reasoning I call the Comprehensive Surveyor View. The CSV claims that practical reasoning, in order to be rational, must be a process of choosing the best available alternative from a perspective that is as detached and objective as possible. But this view, while it means to be neutral between various value-bearers, in fact incorporates a bias against those value-bearers that can only be appreciated from a perspective that is not detached—that can only be appreciated, for instance, by agents who bear long-term commitments to the values in question. In the realm of personal relationships, such commitments tend to give rise to the sort of exclusivity that characterizes friendship and romantic love; they prevent the agent from being impartial between her beloved’s needs, interests, etc., and those of other persons. In such contexts, I suggest, needs and claims of other persons may be silenced in much the way that, as John McDowell has suggested, the temptations of immorality are silenced for the virtuous agent.

  6. Quantum optics with nanowires (Conference Presentation)

    Zwiller, Val

    2017-02-01

    Nanowires offer new opportunities for nanoscale quantum optics; the quantum dot geometry in semiconducting nanowires as well as the material composition and environment can be engineered with unprecedented freedom to improve the light extraction efficiency. Quantum dots in nanowires are shown to be efficient single photon sources, in addition because of the very small fine structure splitting, we demonstrate the generation of entangled pairs of photons from a nanowire. By doping a nanowire and making ohmic contacts on both sides, a nanowire light emitting diode can be obtained with a single quantum dot as the active region. Under forward bias, this will act as an electrically pumped source of single photons. Under reverse bias, an avalanche effect can multiply photocurrent and enables the detection of single photons. Another type of nanowire under study in our group is superconducting nanowires for single photon detection, reaching efficiencies, time resolution and dark counts beyond currently available detectors. We will discuss our first attempts at combining semiconducting nanowire based single photon emitters and superconducting nanowire single photon detectors on a chip to realize integrated quantum circuits.

  7. Ultrafine manganese dioxide nanowire network for high-performance supercapacitors.

    Jiang, Hao; Zhao, Ting; Ma, Jan; Yan, Chaoyi; Li, Chunzhong

    2011-01-28

    Ultrafine MnO(2) nanowires with sub-10 nm diameters have been synthesized by a simple process of hydrothermal treatment with subsequent calcinations to form networks that exhibit an enhanced specific capacitance (279 F g(-1) at 1 A g(-1)), high rate capability (54.5% retention at 20 A g(-1)) and good cycling stability (1.7% loss after 1000 cycles).

  8. Model of reversible vesicular transport with exclusion

    Bressloff, Paul C; Karamched, Bhargav R

    2016-01-01

    A major question in neurobiology concerns the mechanics behind the motor-driven transport and delivery of vesicles to synaptic targets along the axon of a neuron. Experimental evidence suggests that the distribution of vesicles along the axon is relatively uniform and that vesicular delivery to synapses is reversible. A recent modeling study has made explicit the crucial role that reversibility in vesicular delivery to synapses plays in achieving uniformity in vesicle distribution, so called synaptic democracy (Bressloff et al 2015 Phys. Rev. Lett. 114 168101). In this paper we generalize the previous model by accounting for exclusion effects (hard-core repulsion) that may occur between molecular motor-cargo complexes (particles) moving along the same microtubule track. The resulting model takes the form of an exclusion process with four internal states, which distinguish between motile and stationary particles, and whether or not a particle is carrying vesicles. By applying a mean field approximation and an adiabatic approximation we reduce the system of ODEs describing the evolution of occupation numbers of the sites on a 1D lattice to a system of hydrodynamic equations in the continuum limit. We find that reversibility in vesicular delivery allows for synaptic democracy even in the presence of exclusion effects, although exclusion does exacerbate nonuniform distributions of vesicles in an axon when compared with a model without exclusion. We also uncover the relationship between our model and other models of exclusion processes with internal states. (paper)

  9. Controlling the physical parameters of crystalline CIGS nanowires for use in superstrate configuration using vapor phase epitaxy

    Lee, Dongjin; Jeon, H. C.; Kang, T. W.; Kumar, Sunil

    2018-03-01

    Indium tin oxide (ITO) is a suitable candidate for smart windows and bifacial semi-transparent solar cell applications. In this study, highly crystalline CuInGaSe2 (CIGS) nanowires were successfully grown by horizontal-type vapor phase epitaxy on an ITO substrate. Length, diameter, and density of the nanowires were studied by varying the growth temperature (500, 520, and 560 °C), time (3.5, 6.5, and 9.5 h), and type of catalyst (In, Au, and Ga). Length, diameter, and density of the nanowires were found to be highly dependent on the growth conditions. At an optimized growth period and temperature of 3.5 h and 520 °C, respectively, the length and diameter of the nanowires were found to increase when grown in a catalyst-free environment. However, the density of the nanowires was found to be higher while using a catalyst during growth. Even in a catalyst-free environment, an Indium cluster formed at the bottom of the nanowires. The source of these nanowires is believed to be Indium from the ITO substrate which was observed in the EDS measurement. TEM-based EDS and line EDS indicated that the nanowires are made up of CIGS material with a very low Gallium content. XRD measurements also show the appearance of wurtzite CIS nanowires grown on ITO in addition to the chalcopyrite phase. PL spectroscopy was done to see the near-band-edge emission for finding band-to-band optical transition in this material. Optical response of the CIGS nanowire network was also studied to see the photovoltaic effect. This work creates opportunities for making real solar cell devices in superstrate configuration.

  10. Crystallinity, Surface Morphology, and Photoelectrochemical Effects in Conical InP and InN Nanowires Grown on Silicon.

    Parameshwaran, Vijay; Xu, Xiaoqing; Clemens, Bruce

    2016-08-24

    The growth conditions of two types of indium-based III-V nanowires, InP and InN, are tailored such that instead of yielding conventional wire-type morphologies, single-crystal conical structures are formed with an enlarged diameter either near the base or near the tip. By using indium droplets as a growth catalyst, combined with an excess indium supply during growth, "ice cream cone" type structures are formed with a nanowire "cone" and an indium-based "ice cream" droplet on top for both InP and InN. Surface polycrystallinity and annihilation of the catalyst tip of the conical InP nanowires are observed when the indium supply is turned off during the growth process. This growth design technique is extended to create single-crystal InN nanowires with the same morphology. Conical InN nanowires with an enlarged base are obtained through the use of an excess combined Au-In growth catalyst. Electrochemical studies of the InP nanowires on silicon demonstrate a reduction photocurrent as a proof of photovolatic behavior and provide insight as to how the observed surface polycrystallinity and the resulting interface affect these device-level properties. Additionally, a photovoltage is induced in both types of conical InN nanowires on silicon, which is not replicated in epitaxial InN thin films.

  11. The electronic properties of phosphorus-doped GaN nanowires from first-principle calculations

    Fu, Nannan; Li, Enling; Cui, Zhen; Ma, Deming; Wang, Wei; Zhang, Yulong; Song, Sha; Lin, Jie

    2014-01-01

    Highlights: • The P impurities tend to enrich at the surface of GaN nanowires. • The lattice parameters of GaN nanowires are changed by the P impurity. • Donor impurity level appears when the P impurity substitutes for the Ga atom. • The band gap decreases slightly when the P impurity substitutes for the N atom. - Abstract: The electronic properties of phosphorus-doped unsaturated and saturated gallium nitride (GaN) nanowires have been investigated from first-principles using the ultrasoft pseudopotential method. The results of these calculations indicate that the P impurities are enriched at the surface of gallium nitride nanowires, and that the structural symmetry of GaN nanowires is broken due to changes in the lattice parameters. When the P impurity substitutes for the Ga atom, the width of band gap increases at the Γ point, a donor impurity level appears in the band gap, and the P impurity and adjacent N atoms exists covalent interaction. Moreover, when the P impurity substitutes for the N atom, the width of the band gap decreases slightly at the Γ point, there is no obvious impurity level in the band gap, and P–Ga covalent bonds are formed, including those composed of ionic bonds. These conclusions indicate that the incorporation of P impurities can improve the field emission performance of GaN nanowires, which is consistent with the experimental results

  12. Linearly polarized emission from an embedded quantum dot using nanowire morphology control.

    Foster, Andrew P; Bradley, John P; Gardner, Kirsty; Krysa, Andrey B; Royall, Ben; Skolnick, Maurice S; Wilson, Luke R

    2015-03-11

    GaAs nanowires with elongated cross sections are formed using a catalyst-free growth technique. This is achieved by patterning elongated nanoscale openings within a silicon dioxide growth mask on a (111)B GaAs substrate. It is observed that MOVPE-grown vertical nanowires with cross section elongated in the [21̅1̅] and [1̅12] directions remain faithful to the geometry of the openings. An InGaAs quantum dot with weak radial confinement is realized within each nanowire by briefly introducing indium into the reactor during nanowire growth. Photoluminescence emission from an embedded nanowire quantum dot is strongly linearly polarized (typically >90%) with the polarization direction coincident with the axis of elongation. Linearly polarized PL emission is a result of embedding the quantum dot in an anisotropic nanowire structure that supports a single strongly confined, linearly polarized optical mode. This research provides a route to the bottom-up growth of linearly polarized single photon sources of interest for quantum information applications.

  13. GISAXS and SAXS studies on the spatial structures of Co nanowire arrays

    Cheng Weidong; Xing Xueqing; Wang Dehong; Gong Yu; Mo Guang; Cai Quan; Chen Zhongjun; Wu Zhonghua

    2011-01-01

    The spatial structures of magnetic Co nanowire array embedded in anodic aluminium membranes were investigated by grazing incidence small angle X-ray scattering (GISAXS) and conventional small angle X-ray scattering (SAXS) techniques. Compared with SEM observation, the GISAXS and SAXS measurements can get more overall structural information in a large-area scale. In this study, the two-dimensional GISAXS pattern was well reconstructed by using the IsGISAXS program. The results demonstrate that the hexagonal lattice formed by the Co nanowires is distorted (a≈105 nm, b≈95 nm). These Co nanowires are isolated into many structure domains with different orientations with a size of about 2 μm. The SAXS results have also confirmed that the nanopore structures in the AAM can be retained after depositing Co nanowires although the Co nanowires can not completely but only just fill up the nanopores. These results are helpful for understanding the global structure of the Co nanowire array. (authors)

  14. Room temperature synthesis of silver nanowires from tabular silver bromide crystals in the presence of gelatin

    Liu, Suwen; Wehmschulte, Rudolf J.; Lian, Guoda; Burba, Christopher M.

    2006-03-01

    Long silver nanowires were synthesized at room temperature by a simple and fast process derived from the development of photographic films. A film consisting of an emulsion of tabular silver bromide grains in gelatin was treated with a photographic developer (4-(methylamino)phenol sulfate (metol), citric acid) in the presence of additional aqueous silver nitrate. The silver nanowires have lengths of more than 50 μm, some even more than 100 μm, and average diameters of about 80 nm. Approximately, 70% of the metallic silver formed in the reduction consists of silver nanowires. Selected area electron diffraction (SAED) results indicate that the silver nanowires grow along the [111] direction. It was found that the presence of gelatin, tabular silver bromide crystals and silver ions in solution are essential for the formation of the silver nanowires. The nanowires appear to originate from the edges of the silver bromide crystals. They were characterized by transmission electron microscopy (TEM), SAED, scanning electron microscopy (SEM), and powder X-ray diffraction (XRD).

  15. Room temperature synthesis of silver nanowires from tabular silver bromide crystals in the presence of gelatin

    Liu Suwen; Wehmschulte, Rudolf J.; Lian Guoda; Burba, Christopher M.

    2006-01-01

    Long silver nanowires were synthesized at room temperature by a simple and fast process derived from the development of photographic films. A film consisting of an emulsion of tabular silver bromide grains in gelatin was treated with a photographic developer (4-(methylamino)phenol sulfate (metol), citric acid) in the presence of additional aqueous silver nitrate. The silver nanowires have lengths of more than 50 μm, some even more than 100 μm, and average diameters of about 80 nm. Approximately, 70% of the metallic silver formed in the reduction consists of silver nanowires. Selected area electron diffraction (SAED) results indicate that the silver nanowires grow along the [111] direction. It was found that the presence of gelatin, tabular silver bromide crystals and silver ions in solution are essential for the formation of the silver nanowires. The nanowires appear to originate from the edges of the silver bromide crystals. They were characterized by transmission electron microscopy (TEM), SAED, scanning electron microscopy (SEM), and powder X-ray diffraction (XRD)

  16. The electronic properties of phosphorus-doped GaN nanowires from first-principle calculations

    Fu, Nannan; Li, Enling, E-mail: Lienling@xaut.edu.cn; Cui, Zhen; Ma, Deming; Wang, Wei; Zhang, Yulong; Song, Sha; Lin, Jie

    2014-05-01

    Highlights: • The P impurities tend to enrich at the surface of GaN nanowires. • The lattice parameters of GaN nanowires are changed by the P impurity. • Donor impurity level appears when the P impurity substitutes for the Ga atom. • The band gap decreases slightly when the P impurity substitutes for the N atom. - Abstract: The electronic properties of phosphorus-doped unsaturated and saturated gallium nitride (GaN) nanowires have been investigated from first-principles using the ultrasoft pseudopotential method. The results of these calculations indicate that the P impurities are enriched at the surface of gallium nitride nanowires, and that the structural symmetry of GaN nanowires is broken due to changes in the lattice parameters. When the P impurity substitutes for the Ga atom, the width of band gap increases at the Γ point, a donor impurity level appears in the band gap, and the P impurity and adjacent N atoms exists covalent interaction. Moreover, when the P impurity substitutes for the N atom, the width of the band gap decreases slightly at the Γ point, there is no obvious impurity level in the band gap, and P–Ga covalent bonds are formed, including those composed of ionic bonds. These conclusions indicate that the incorporation of P impurities can improve the field emission performance of GaN nanowires, which is consistent with the experimental results.

  17. A general melt-injection-decomposition route to oriented metal oxide nanowire arrays

    Han, Dongqiang; Zhang, Xinwei; Hua, Zhenghe; Yang, Shaoguang, E-mail: sgyang@nju.edu.cn

    2016-12-30

    Highlights: • A general melt-injection-decomposition (MID) route is proposed for the fabrication of oriented metal oxide nanowire arrays. • Four kinds of metal oxide (CuO, Mn{sub 2}O{sub 3}, Co{sub 3}O{sub 4} and Cr{sub 2}O{sub 3}) nanowire arrays have been realized as examples through the developed MID route. • The mechanism of the developed MID route is discussed using Thermogravimetry and Differential Thermal Analysis technique. • The MID route is a versatile, simple, facile and effective way to prepare different kinds of oriented metal oxide nanowire arrays in the future. - Abstract: In this manuscript, a general melt-injection-decomposition (MID) route has been proposed and realized for the fabrication of oriented metal oxide nanowire arrays. Nitrate was used as the starting materials, which was injected into the nanopores of the anodic aluminum oxide (AAO) membrane through the capillarity action in its liquid state. At higher temperature, the nitrate decomposed into corresponding metal oxide within the nanopores of the AAO membrane. Oriented metal oxide nanowire arrays were formed within the AAO membrane as a result of the confinement of the nanopores. Four kinds of metal oxide (CuO, Mn{sub 2}O{sub 3}, Co{sub 3}O{sub 4} and Cr{sub 2}O{sub 3}) nanowire arrays are presented here as examples fabricated by this newly developed process. X-ray diffraction, scanning electron microscopy and transmission electron microscopy studies showed clear evidence of the formations of the oriented metal oxide nanowire arrays. Formation mechanism of the metal oxide nanowire arrays is discussed based on the Thermogravimetry and Differential Thermal Analysis measurement results.

  18. Quantitative measurements of C-reactive protein using silicon nanowire arrays

    Min-Ho Lee

    2008-03-01

    Full Text Available Min-Ho Lee, Kuk-Nyung Lee, Suk-Won Jung, Won-Hyo Kim, Kyu-Sik Shin, Woo-Kyeong SeongKorea Electronics Technology Institute, Gyeonggi, KoreaAbstract: A silicon nanowire-based sensor for biological application showed highly desirable electrical responses to either pH changes or receptor-ligand interactions such as protein disease markers, viruses, and DNA hybridization. Furthermore, because the silicon nanowire can display results in real-time, it may possess superior characteristics for biosensing than those demonstrated in previously studied methods. However, despite its promising potential and advantages, certain process-related limitations of the device, due to its size and material characteristics, need to be addressed. In this article, we suggest possible solutions. We fabricated silicon nanowire using a top-down and low cost micromachining method, and evaluate the sensing of molecules after transfer and surface modifications. Our newly designed method can be used to attach highly ordered nanowires to various substrates, to form a nanowire array device, which needs to follow a series of repetitive steps in conventional fabrication technology based on a vapor-liquid-solid (VLS method. For evaluation, we demonstrated that our newly fabricated silicon nanowire arrays could detect pH changes as well as streptavidin-biotin binding events. As well as the initial proof-of-principle studies, C-reactive protein binding was measured: electrical signals were changed in a linear fashion with the concentration (1 fM to 1 nM in PBS containing 1.37 mM of salts. Finally, to address the effects of Debye length, silicon nanowires coupled with antigen proteins underwent electrical signal changes as the salt concentration changed.Keywords: silicon nanowire array, C-reactive protein, vapor-liquid-solid method

  19. A general melt-injection-decomposition route to oriented metal oxide nanowire arrays

    Han, Dongqiang; Zhang, Xinwei; Hua, Zhenghe; Yang, Shaoguang

    2016-01-01

    Highlights: • A general melt-injection-decomposition (MID) route is proposed for the fabrication of oriented metal oxide nanowire arrays. • Four kinds of metal oxide (CuO, Mn_2O_3, Co_3O_4 and Cr_2O_3) nanowire arrays have been realized as examples through the developed MID route. • The mechanism of the developed MID route is discussed using Thermogravimetry and Differential Thermal Analysis technique. • The MID route is a versatile, simple, facile and effective way to prepare different kinds of oriented metal oxide nanowire arrays in the future. - Abstract: In this manuscript, a general melt-injection-decomposition (MID) route has been proposed and realized for the fabrication of oriented metal oxide nanowire arrays. Nitrate was used as the starting materials, which was injected into the nanopores of the anodic aluminum oxide (AAO) membrane through the capillarity action in its liquid state. At higher temperature, the nitrate decomposed into corresponding metal oxide within the nanopores of the AAO membrane. Oriented metal oxide nanowire arrays were formed within the AAO membrane as a result of the confinement of the nanopores. Four kinds of metal oxide (CuO, Mn_2O_3, Co_3O_4 and Cr_2O_3) nanowire arrays are presented here as examples fabricated by this newly developed process. X-ray diffraction, scanning electron microscopy and transmission electron microscopy studies showed clear evidence of the formations of the oriented metal oxide nanowire arrays. Formation mechanism of the metal oxide nanowire arrays is discussed based on the Thermogravimetry and Differential Thermal Analysis measurement results.

  20. Photonic nanowires for quantum optics

    Munsch, M.; Claudon, J.; Bleuse, J.

    Photonic nanowires (PWs) are simple dielectric structures for which a very efficient and broadband spontaneous emission (SE) control has been predicted [1]. Recently, a single photon source featuring a record high efficiency was demonstrated using this geometry [2]. Using time-resolved micro-phot...

  1. Tunneling and Transport in Nanowires

    Goldman, Allen M.

    2016-01-01

    The goal of this program was to study new physical phenomena that might be relevant to the performance of conductive devices and circuits of the smallest realizable feature sizes possible using physical rather than biological techniques. Although the initial scientific work supported involved the use of scanning tunneling microscopy and spectroscopy to ascertain the statistics of the energy level distribution of randomly sized and randomly shaped quantum dots, or nano-crystals, the main focus was on the investigation of selected properties, including superconductivity, of conducting and superconducting nanowires prepared using electron-beam-lithography. We discovered a magnetic-field-restoration of superconductivity in out-of-equilibrium nanowires driven resistive by current. This phenomenon was explained by the existence of a state in which dissipation coexisted with nonvanishing superconducting order. We also produced ultra-small superconducting loops to study a predicted anomalous fluxoid quantization, but instead, found a magnetic-field-dependent, high-resistance state, rather than superconductivity. Finally, we developed a simple and controllable nanowire in an induced charged layer near the surface of a masked single-crystal insulator, SrTiO_3. The layer was induced using an electric double layer transistor employing an ionic liquid (IL). The transport properties of the induced nanowire resembled those of collective electronic transport through an array of quantum dots.

  2. Tunneling and Transport in Nanowires

    Goldman, Allen M. [Univ. of Minnesota, Minneapolis, MN (United States)

    2016-08-16

    The goal of this program was to study new physical phenomena that might be relevant to the performance of conductive devices and circuits of the smallest realizable feature sizes possible using physical rather than biological techniques. Although the initial scientific work supported involved the use of scanning tunneling microscopy and spectroscopy to ascertain the statistics of the energy level distribution of randomly sized and randomly shaped quantum dots, or nano-crystals, the main focus was on the investigation of selected properties, including superconductivity, of conducting and superconducting nanowires prepared using electron-beam-lithography. We discovered a magnetic-field-restoration of superconductivity in out-of-equilibrium nanowires driven resistive by current. This phenomenon was explained by the existence of a state in which dissipation coexisted with nonvanishing superconducting order. We also produced ultra-small superconducting loops to study a predicted anomalous fluxoid quantization, but instead, found a magnetic-field-dependent, high-resistance state, rather than superconductivity. Finally, we developed a simple and controllable nanowire in an induced charged layer near the surface of a masked single-crystal insulator, SrTiO3. The layer was induced using an electric double layer transistor employing an ionic liquid (IL). The transport properties of the induced nanowire resembled those of collective electronic transport through an array of quantum dots.

  3. Biotemplated synthesis of PZT nanowires.

    Cung, Kellye; Han, Booyeon J; Nguyen, Thanh D; Mao, Sheng; Yeh, Yao-Wen; Xu, Shiyou; Naik, Rajesh R; Poirier, Gerald; Yao, Nan; Purohit, Prashant K; McAlpine, Michael C

    2013-01-01

    Piezoelectric nanowires are an important class of smart materials for next-generation applications including energy harvesting, robotic actuation, and bioMEMS. Lead zirconate titanate (PZT), in particular, has attracted significant attention, owing to its superior electromechanical conversion performance. Yet, the ability to synthesize crystalline PZT nanowires with well-controlled properties remains a challenge. Applications of common nanosynthesis methods to PZT are hampered by issues such as slow kinetics, lack of suitable catalysts, and harsh reaction conditions. Here we report a versatile biomimetic method, in which biotemplates are used to define PZT nanostructures, allowing for rational control over composition and crystallinity. Specifically, stoichiometric PZT nanowires were synthesized using both polysaccharide (alginate) and bacteriophage templates. The wires possessed measured piezoelectric constants of up to 132 pm/V after poling, among the highest reported for PZT nanomaterials. Further, integrated devices can generate up to 0.820 μW/cm(2) of power. These results suggest that biotemplated piezoelectric nanowires are attractive candidates for stimuli-responsive nanosensors, adaptive nanoactuators, and nanoscale energy harvesters.

  4. Nanowire-based gas sensors

    Chen, X.; Wong, C.K.Y.; Yuan, C.A.; Zhang, G.

    2013-01-01

    Gas sensors fabricated with nanowires as the detecting elements are powerful due to their many improved characteristics such as high surface-to-volume ratios, ultrasensitivity, higher selectivity, low power consumption, and fast response. This paper gives an overview on the recent process of the

  5. Counterfactual overdetermination vs. the causal exclusion problem.

    Sparber, Georg

    2005-01-01

    This paper aims to show that a counterfactual approach to causation is not sufficient to provide a solution to the causal exclusion problem in the form of systematic overdetermination. Taking into account the truthmakers of causal counterfactuals provides a strong argument in favour of the identity of causes in situations of translevel, causation.

  6. Magnetostatic Interaction in Fe-Co Nanowires

    Laura Elbaile

    2012-01-01

    Full Text Available Arrays of Fe-Co alloy nanowires with diameter around 35 nm and several micrometers in length have been synthesized by codepositing Fe and Co into porous anodic alumina. The morphology, structure, and magnetic properties of the nanowires (hysteresis loops and remanence curves were characterized by SEM, TEM, X-ray diffraction (XRD, and VSM, respectively. The XRD patterns indicate that the Fe-Co nanowires present a body-centered cubic (bcc structure and a preferred (110 orientation perpendicular to the template surface. From the hysteresis loops obtained with the magnetic field applied in the axis direction of the nanowires, we can observe that the coercive field slightly decreases when the nanowire length increases. This magnetic behaviour is analyzed considering the shape anisotropy and the dipolar interactions among nanowires.

  7. Synthesis of the cactus-like silicon nanowires/tungsten oxide nanowires composite for room-temperature NO{sub 2} gas sensor

    Zhang, Weiyi, E-mail: zhangweiyi@tju.edu.cn [School of Electronic Information Engineering, Tianjin University, Tianjin, 300072 (China); Hu, Ming [School of Electronic Information Engineering, Tianjin University, Tianjin, 300072 (China); Key Laboratory for Advanced Ceramics and Machining Technology, Ministry of Education, School of Materials Science and Engineering, Tianjin University, Tianjin 300072 (China); Liu, Xing; Wei, Yulong; Li, Na [School of Electronic Information Engineering, Tianjin University, Tianjin, 300072 (China); Qin, Yuxiang, E-mail: qinyuxiang@tju.edu.cn [School of Electronic Information Engineering, Tianjin University, Tianjin, 300072 (China); Key Laboratory for Advanced Ceramics and Machining Technology, Ministry of Education, School of Materials Science and Engineering, Tianjin University, Tianjin 300072 (China)

    2016-09-15

    In the present work, the tungsten oxide (WO{sub 3}) nanowires functionalized silicon nanowires (SiNWs) with cactus-like structure has been successfully synthesized for room-temperature NO{sub 2} detection. The novel nanocomposite was fabricated by metal-assisted chemical etching (MACE) and thermal annealing of tungsten film. The WO{sub 3} nanowires were evenly distributed from the upper to the lower part of the SiNWs, indicating excellent uniformity which is conducive to adsorption and desorption of gas molecules. The gas-sensing properties have been examined by measuring the resistance change towards 0.25–5 ppm NO{sub 2} gas. At room temperature, which is the optimum working temperature, the SiNWs/WO{sub 3} nanowires composite showed two-times higher NO{sub 2} response than that of the bare SiNWs at 2 ppm NO{sub 2}. On the contrary, the responses of composite sensors to high concentrations of other reducing gases were very low, indicating excellent selectivity. Simultaneously, the composite sensors exhibited good sensing repeatability and stability. The enhancement in gas sensing properties may be attributed to the change in width of the space charge region, which is similar to the behavior of p-n junctions under forward bias, in the high-density p-n heterojunction structure formed between SiNWs and WO{sub 3} nanowires. - Highlights: • SiNWs/WO{sub 3} nanowires composite with cactus-like structure is synthesized. • The morphology of WO{sub 3} nanowires depends on the thermal annealing temperature. • The nanocomposite sensor exhibit better gas response than that of bare SiNWs. • The gas sensing mechanism is discussed using p-n heterojunction theory.

  8. Social exclusion anxiety

    Søndergaard, Dorte Marie

    2014-01-01

    . The concepts I work with are the need for belonging, social exclusion anxiety and the production of contempt and dignity by both children and adults. I develop a new definition of bullying, drawing upon Judith Butler’s (1999) concept of ‘abjection’ as well as Karen Barad’s concept of ‘intra-acting forces......’ (Barad 2007). My definition in this chapter contributed to the shorter definition of bullying in the Introduction (see page XX), but it is more fully developed here in relation to the types of mechanisms and processes involved. Barad’s term ‘intra-action’ helps draw attention to the mutually...

  9. Design and fabrication of Ni nanowires having periodically hollow nanostructures

    Sada, Takao; Fujigaya, Tsuyohiko; Nakashima, Naotoshi

    2014-09-01

    We propose a concept for the design and fabrication of metal nanowires having periodically hollow nanostructures inside the pores of an anodic aluminum oxide (AAO) membrane using a sacrificial metal. In this study, nickel (Ni) and silver (Ag) were used as the base metal and the sacrificial metal, respectively. Alternating an applied potential between -0.4 and -1.0 V provided alternatively deposited Ni and Ag segments in a Ni-Ag `barcode' nanowire with a diameter of 18 or 35 nm. After etching away the Ag segments, we fabricated Ni nanowires with nanopores of 12 +/- 5.3 nm. Such nanostructure formation is explained by the formation of a Ni shell layer over the surface of the Ag segments due to the strong affinity of Ni2+ for the interior surfaces of AAO. The Ni shell layer allows the Ni segments to remain even after dissolution of the Ag segments. Because the electroplating conditions can be easily controlled, we could carefully adjust the size and pitch of the periodically hollow nanospaces. We also describe a method for the fabrication of Ni nanorods by forming an Ag shell instead of a Ni shell on the Ni-Ag barcode nanowire, in which the interior of the AAO surfaces was modified with a compound bearing a thiol group prior to electroplating.We propose a concept for the design and fabrication of metal nanowires having periodically hollow nanostructures inside the pores of an anodic aluminum oxide (AAO) membrane using a sacrificial metal. In this study, nickel (Ni) and silver (Ag) were used as the base metal and the sacrificial metal, respectively. Alternating an applied potential between -0.4 and -1.0 V provided alternatively deposited Ni and Ag segments in a Ni-Ag `barcode' nanowire with a diameter of 18 or 35 nm. After etching away the Ag segments, we fabricated Ni nanowires with nanopores of 12 +/- 5.3 nm. Such nanostructure formation is explained by the formation of a Ni shell layer over the surface of the Ag segments due to the strong affinity of Ni2+ for the

  10. Social exclusion and education

    Jokić Vesna

    2009-01-01

    Full Text Available Social exclusion is a process whereby certain individuals are pushed to the edge of society and prevented from participating fully by virtue of their poverty, or lack of basic competencies and lifelong learning opportunities or as a result of discrimination. This distances them from job, income and education opportunities as well as social and community networks and activities. Quality education (conditions and access/accessibility/availability is one of the factors that significantly influence the reduced social exclusion. In other words, education has is key role key role in ensuring social inclusion (equal opportunities and active social participation. At the same time, education and lifelong learning is established as the basis for achieving the goals of sustainable economic development (economy based on knowledge and to achieve social cohesion. Quality education is a prerequisite for progress, development and well-being of the community. Conditions and accessibility to education have become priorities of national reforms in most European countries. The subject of this paper is the educational structure of population of Serbia and the accessibility of education. The analysis covers the educational structure with regard to age, gender and type of settlement (city and other/villages settlements.

  11. Enhanced ionized impurity scattering in nanowires

    Oh, Jung Hyun; Lee, Seok-Hee; Shin, Mincheol

    2013-06-01

    The electronic resistivity in silicon nanowires is investigated by taking into account scattering as well as the donor deactivation from the dielectric mismatch. The effects of poorly screened dopant atoms from the dielectric mismatch and variable carrier density in nanowires are found to play a crucial role in determining the nanowire resistivity. Using Green's function method within the self-consistent Born approximation, it is shown that donor deactivation and ionized impurity scattering combined with the charged interface traps successfully to explain the increase in the resistivity of Si nanowires while reducing the radius, measured by Björk et al. [Nature Nanotech. 4, 103 (2009)].

  12. Diluted magnetic semiconductor nanowires exhibiting magnetoresistance

    Yang, Peidong [El Cerrito, CA; Choi, Heonjin [Seoul, KR; Lee, Sangkwon [Daejeon, KR; He, Rongrui [Albany, CA; Zhang, Yanfeng [El Cerrito, CA; Kuykendal, Tevye [Berkeley, CA; Pauzauskie, Peter [Berkeley, CA

    2011-08-23

    A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga.sub.1-xMn.sub.xN (x=0.07) were synthesized. The nanowires, which have diameters of .about.10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.

  13. Magnetotransport and magnetization reversal of electrodeposited multilayer nanowires

    Tang, Xueti

    2007-12-01

    by measuring the magnetic hysteresis loops under various directions of applied magnetic field, particularly comparing the measured coercivity data with those obtained from theoretical models. It was found that there is a transition for the magnetization reversal mode in rod-shaped CoNi layers from coherent rotation to curling with increasing angle between the field direction and the nanowires, while the reversal mode is of coherent rotation type for disk-shaped CoNi layers. When the thickness of the CoNi layers decreases to very thin regime, the layers eventually become discontinuous and form discrete islands that exhibit superparamagnetism. The layer thickness dependence of CPP-GMR was measured for CoNi/Cu multilayer nanowires and compared with the Valet-Fert model. There are both agreement and deviation between the experimental results and theoretical prediction. When both the Cu layer thickness tCu and CoNi layer thickness tCoNi are much smaller than the spin diffusion length l of the corresponding material, i.e. tCu> tCoNi>>lCoNi, (DeltaR/R P)-1 is proportional to tCoNi , in agreement with the V-F model. Analysis of the CPP-GMR parameters shows that the interfacial spin asymmetry coefficient gamma is much larger than the bulk spin asymmetry coefficient beta, indicating that the interfacial scattering is important for the CPP-GMR. However, there is a discrepancy between the experimental data and the V-F model when tCoNi is very small, probably due to formation of thin and discontinuous magnetic layers that exhibit superparamagnetism. There is also a disagreement between the experimental data and the model for tCoNi >170 nm, where the anisotropic magnetoresistance (AMR) is not negligible. All the results obtained in this study have proven that electrodeposited multilayer nanowires exhibit unique magnetic properties and are advantageous for the study of CPP-GMR. The findings in magnetization reversal mechanism are believed to help better understand the complicated

  14. Supersensitive, Fast-Response Nanowire Sensors by Using Schottky Contacts

    Hu, Youfan

    2010-05-31

    A Schottky barrier can be formed at the interface between a metal electrode and a semiconductor. The current passing through the metal-semiconductor contact is mainly controlled by the barrier height and barrier width. In conventional nanodevices, Schottky contacts are usually avoided in order to enhance the contribution made by the nanowires or nanotubes to the detected signal. We present a key idea of using the Schottky contact to achieve supersensitive and fast response nanowire-based nanosensors. We have illustrated this idea on several platforms: UV sensors, biosensors, and gas sensors. The gigantic enhancement in sensitivity of up to 5 orders of magnitude shows that an effective usage of the Schottky contact can be very beneficial to the sensitivity of nanosensors. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Controlled Growth of Rubrene Nanowires by Eutectic Melt Crystallization

    Chung, Jeyon; Hyon, Jinho; Park, Kyung-Sun; Cho, Boram; Baek, Jangmi; Kim, Jueun; Lee, Sang Uck; Sung, Myung Mo; Kang, Youngjong

    2016-03-01

    Organic semiconductors including rubrene, Alq3, copper phthalocyanine and pentacene are crystallized by the eutectic melt crystallization. Those organic semiconductors form good eutectic systems with the various volatile crystallizable additives such as benzoic acid, salicylic acid, naphthalene and 1,3,5-trichlorobenzene. Due to the formation of the eutectic system, organic semiconductors having originally high melting point (Tm > 300 °C) are melted and crystallized at low temperature (Te = 40.8-133 °C). The volatile crystallizable additives are easily removed by sublimation. For a model system using rubrene, single crystalline rubrene nanowires are prepared by the eutectic melt crystallization and the eutectic-melt-assisted nanoimpinting (EMAN) technique. It is demonstrated that crystal structure and the growth direction of rubrene can be controlled by using different volatile crystallizable additives. The field effect mobility of rubrene nanowires prepared using several different crystallizable additives are measured and compared.

  16. Investigation of growth parameters influence on self-catalyzed ITO nanowires by high RF-power sputtering.

    Li, Qiang; Zhang, Yuantao; Feng, Lungang; Wang, Zuming; Wang, Tao; Yun, Feng

    2018-02-15

    ITO nanowires have been successfully fabricated using a radio-frequency sputtering technique with a high RF-power of 250W. The fabrication of the ITO nanowires has been optimized through the study of oxygen flow rates, temperatures and RF-power. The difference in the morphology of the ITO nanowires prepared by using a new target and a used target has been first observed and the mechanism for the difference has been discussed in detail. A hollow structure and air voids within the nanowires are formed during the process of the nanowire growth. The ITO nanowires fabricated by this method has demonstrated good conductivity (15Ω/sq) and a transmittance of more than 64% at a wavelength longer than 550nm after annealing. Furthermore, detailed microstructure studies show that the ITO nanowires exhibit a large number of oxygen vacancies. As a result, it is expected that they can be useful for the fabrication of gas sensor devices. © 2018 IOP Publishing Ltd.

  17. Growth control, structure, chemical state, and photoresponse of CuO-CdS core-shell heterostructure nanowires.

    El Mel, A A; Buffière, M; Bouts, N; Gautron, E; Tessier, P Y; Henzler, K; Guttmann, P; Konstantinidis, S; Bittencourt, C; Snyders, R

    2013-07-05

    The growth of single-crystal CuO nanowires by thermal annealing of copper thin films in air is studied. We show that the density, length, and diameter of the nanowires can be controlled by tuning the morphology and structure of the copper thin films deposited by DC magnetron sputtering. After identifying the optimal conditions for the growth of CuO nanowires, chemical bath deposition is employed to coat the CuO nanowires with CdS in order to form p-n nanojunction arrays. As revealed by high-resolution TEM analysis, the thickness of the polycrystalline CdS shell increases when decreasing the diameter of the CuO core for a given time of CdS deposition. Near-edge x-ray absorption fine-structure spectroscopy combined with transmission x-ray microscopy allows the chemical analysis of isolated nanowires. The absence of modification in the spectra at the Cu L and O K edges after the deposition of CdS on the CuO nanowires indicates that neither Cd nor S diffuse into the CuO phase. We further demonstrate that the core-shell nanowires exhibit the I-V characteristic of a resistor instead of a diode. The electrical behavior of the device was found to be photosensitive, since increasing the incident light intensity induces an increase in the collected electrical current.

  18. Growth mechanism of titanium dioxide nanowires for dye-sensitized solar cells

    Boercker, J E; Enache-Pommer, E; Aydil, E S [Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Avenue SE, Minneapolis, MN 55455 (United States)], E-mail: aydil@umn.edu

    2008-03-05

    Mesoporous films made of titanium dioxide nanowires are desirable for dye-sensitized solar cells because nanowires provide direct conduction pathways for photogenerated electrons. Anatase titanium dioxide nanowires with polycrystalline microstructure were synthesized on titanium foil using a three-step process. First, the top surface of the titanium foil was transformed to Na{sub 2}Ti{sub 2}O{sub 4}(OH){sub 2} nanotubes through hydrothermal oxidation in NaOH. Next, the Na{sub 2}Ti{sub 2}O{sub 4}(OH){sub 2} nanotubes were converted to H{sub 2}Ti{sub 2}O{sub 4}(OH){sub 2} nanotubes by ion exchange. Finally, the H{sub 2}Ti{sub 2}O{sub 4}(OH){sub 2} nanotubes were converted to polycrystalline anatase nanowires through a topotactic transformation. The film morphology evolution, crystal structure transformations and growth mechanism are described in detail. Titanium foil reacts with NaOH to form Na{sub 2}Ti{sub 2}O{sub 4}(OH){sub 2} sheets, which exfoliate and spiral into nanotubes. The Na{sub 2}Ti{sub 2}O{sub 4}(OH){sub 2} nanotubes are immersed in HCl solution to replace the Na{sup +} ions with H{sup +} ions. During the topotactic transformation of H{sub 2}Ti{sub 2}O{sub 4}(OH){sub 2} nanotubes to anatase TiO{sub 2} nanowires, the sheets made of edge bonded TiO{sub 6} octahedra in the H{sub 2}Ti{sub 2}O{sub 4}(OH){sub 2} nanotubes dehydrate and move towards each other to form anatase crystals oriented along the nanotube axis which creates a polycrystalline nanowire. These mesoporous TiO{sub 2} nanowire films were suitable for use as dye-sensitized solar cell photoanodes.

  19. Growth mechanism of titanium dioxide nanowires for dye-sensitized solar cells

    Boercker, J E; Enache-Pommer, E; Aydil, E S

    2008-01-01

    Mesoporous films made of titanium dioxide nanowires are desirable for dye-sensitized solar cells because nanowires provide direct conduction pathways for photogenerated electrons. Anatase titanium dioxide nanowires with polycrystalline microstructure were synthesized on titanium foil using a three-step process. First, the top surface of the titanium foil was transformed to Na 2 Ti 2 O 4 (OH) 2 nanotubes through hydrothermal oxidation in NaOH. Next, the Na 2 Ti 2 O 4 (OH) 2 nanotubes were converted to H 2 Ti 2 O 4 (OH) 2 nanotubes by ion exchange. Finally, the H 2 Ti 2 O 4 (OH) 2 nanotubes were converted to polycrystalline anatase nanowires through a topotactic transformation. The film morphology evolution, crystal structure transformations and growth mechanism are described in detail. Titanium foil reacts with NaOH to form Na 2 Ti 2 O 4 (OH) 2 sheets, which exfoliate and spiral into nanotubes. The Na 2 Ti 2 O 4 (OH) 2 nanotubes are immersed in HCl solution to replace the Na + ions with H + ions. During the topotactic transformation of H 2 Ti 2 O 4 (OH) 2 nanotubes to anatase TiO 2 nanowires, the sheets made of edge bonded TiO 6 octahedra in the H 2 Ti 2 O 4 (OH) 2 nanotubes dehydrate and move towards each other to form anatase crystals oriented along the nanotube axis which creates a polycrystalline nanowire. These mesoporous TiO 2 nanowire films were suitable for use as dye-sensitized solar cell photoanodes

  20. Exclusive vector meson production at HERA

    Szuba, Dorota [Hamburg University, Hamburg (Germany); Collaboration: H1 Collaboration; ZEUS Collaboration

    2013-04-15

    The exclusive photoproduction of {Upsilon} has been studied with the ZEUS detector in ep collisions at HERA. The exponential slope, b, of the |t|-dependence of the cross section, where t is the squared four-momentum transfer at the proton vertex, has been measured. This constitutes the first measurement of the |t|-dependence of the {gamma}p{yields}{Upsilon}p cross section. The differential crosssections as a function of t at lower energies of {gamma}p centre-of-mass has been studied in exclusive diffractive photoproduction of J/{psi} mesons with the H1 detector. The exclusive electroproduction of two pions has been measured by the ZEUS experiment. The two-pion invariant-mass distribution is interpreted in terms of the pion electromagnetic form factor, assuming that the studied mass range includes the contributions of the {rho}, {rho} Prime and . {rho}'' vector-meson states.

  1. Exclusive vector meson production at HERA

    Szuba, Dorota

    2013-01-01

    The exclusive photoproduction of Υ has been studied with the ZEUS detector in ep collisions at HERA. The exponential slope, b, of the |t|-dependence of the cross section, where t is the squared four-momentum transfer at the proton vertex, has been measured. This constitutes the first measurement of the |t|-dependence of the γp→Υp cross section. The differential crosssections as a function of t at lower energies of γp centre-of-mass has been studied in exclusive diffractive photoproduction of J/ψ mesons with the H1 detector. The exclusive electroproduction of two pions has been measured by the ZEUS experiment. The two-pion invariant-mass distribution is interpreted in terms of the pion electromagnetic form factor, assuming that the studied mass range includes the contributions of the ρ, ρ′ and . ρ'' vector-meson states.

  2. Molecular Beam Epitaxy-Grown InGaN Nanowires and Nanomushrooms for Solid State Lighting

    Gasim, Anwar A.

    2012-05-01

    InGaN is a promising semiconductor for solid state lighting thanks to its bandgap which spans the entire visible regime of the electromagnetic spectrum. InGaN is grown heteroepitaxially due to the absence of a native substrate; however, this results in a strained film and a high dislocation density—two effects that have been associated with efficiency droop, which is the disastrous drop in efficiency of a light-emitting diode (LED) as the input current increases. Heteroepitaxially grown nanowires have recently attracted great interest due to their property of eliminating the detrimental effects of the lattice mismatch and the corollary efficiency droop. In this study, InGaN nanowires were grown on a low-cost Si (111) substrate via molecular beam epitaxy. Unique nanostructures, taking the form of mushrooms, have been observed in localized regions on the samples. These nanomushrooms consist of a nanowire body with a wide cap on top. Photoluminescence characterization revealed that the nanowires emit violet-blue, whilst the nanomushrooms emit a broad yellow-orange-red luminescence. The simultaneous emission from the nanowires and nanomushrooms forms white light. Structural characterization of a single nanomushroom via transmission electron microscopy revealed a simultaneous increase in indium and decrease in gallium at the interface between the body and the cap. Furthermore, the cap itself was found to be indium-rich, confirming it as the source of the longer wavelength yellow-orange-red luminescence. It is believed that the nanomushroom cap formed as a consequence of the saturation of growth on the c-plane of the nanowire. It is proposed that the formation of an indium droplet on the tip of the nanowire saturated growth on the c-plane, forcing the indium and gallium adatoms to incorporate on the sidewall m-planes instead, but only at the nanowire tip. This resulted in the formation of a mushroom-like cap on the tip. How and why the indium droplets formed is not

  3. PREFACE: Synthesis and integration of nanowires

    Samuelson, L.

    2006-06-01

    The field of semiconductor nanowires has attracted much attention in recent years, from the areas of basic materials science, advanced characterization and technology, as well as from the perspective of the applications of nanowires. Research on large-sized whiskers and wires had already begun in the 1960s with the pioneering work of Wagner, as well as by other researchers. It was, however, in the early 1990s that Kenji Hiruma at Hitachi Central Research Laboratories in Japan first succeeded in developing methods for the growth of nanowires with dimensions on the scale of 10-100 nm, thereby initiating the field of growth and applications of nanowires, with a strong emphasis on epitaxial nucleation of nanowires on a single-crystalline substrate. Starting from the mid-1990s, the field developed very rapidly with the number of papers on the subject growing from ten per year to several thousand papers on the subject published annually today, although with a rather generous definition of the concept of nanowires. With this rapid development we have seen many new and different approaches to the growth of nanowires, technological advances leading to a more well-controlled formation of nanowires, new innovative methods for the characterization of structures, as well as a wealth of approaches towards the use of nanowires in electronics, photonics and sensor applications. This issue contains contributions from many different laboratories, each adding significant detail to the development of the field of research. The contributions cover issues such as basic growth, advanced characterization and technology, and application of nanowires. I would like to acknowledge the shared responsibilities for this special issue of Nanotechnology on the synthesis and integration of nanowires with my co-Editors, S Tong Lee and M Sunkara, as well as the highly professional support from Dr Nina Couzin, Dr Ian Forbes and the Nanotechnology team from the Institute of Physics Publishing.

  4. 32 CFR Appendix B to Part 989 - Categorical Exclusions

    2010-07-01

    .... Proponent/EPF Responsibility Although a proposed action may qualify for a categorical exclusion from the requirements for environmental impact analysis under NEPA, this exclusion does not relieve the EPF or the... an EIS or an EA resulting in a FONSI. The EPF must document application of this CATEX on AF Form 813...

  5. Nanowire NMOS Logic Inverter Characterization.

    Hashim, Yasir

    2016-06-01

    This study is the first to demonstrate characteristics optimization of nanowire N-Channel Metal Oxide Semiconductor (NW-MOS) logic inverter. Noise margins and inflection voltage of transfer characteristics are used as limiting factors in this optimization. A computer-based model used to produce static characteristics of NW-NMOS logic inverter. In this research two circuit configuration of NW-NMOS inverter was studied, in first NW-NMOS circuit, the noise margin for (low input-high output) condition was very low. For second NMOS circuit gives excellent noise margins, and results indicate that optimization depends on applied voltage to the inverter. Increasing gate to source voltage with (2/1) nanowires ratio results better noise margins. Increasing of applied DC load transistor voltage tends to increasing in decreasing noise margins; decreasing this voltage will improve noise margins significantly.

  6. Control growth of silicon nanocolumns' epitaxy on silicon nanowires

    Chong, Su Kong, E-mail: sukong1985@yahoo.com.my [University of Malaya, Low Dimensional Materials Research Centre, Department of Physics (Malaysia); Dee, Chang Fu [Universiti Kebangsaan Malaysia (UKM), Institute of Microengineering and Nanoelectronics (IMEN) (Malaysia); Yahya, Noorhana [Universiti Teknologi PETRONAS, Faculty of Science and Information Technology (Malaysia); Rahman, Saadah Abdul [University of Malaya, Low Dimensional Materials Research Centre, Department of Physics (Malaysia)

    2013-04-15

    The epitaxial growth of Si nanocolumns on Si nanowires was studied using hot-wire chemical vapor deposition. A single-crystalline and surface oxide-free Si nanowire core (core radius {approx}21 {+-} 5 nm) induced by indium crystal seed was used as a substance for the vapor phase epitaxial growth. The growth process is initiated by sidewall facets, which then nucleate upon certain thickness to form Si islands and further grow to form nanocolumns. The Si nanocolumns with diameter of 10-20 nm and aspect ratio up to 10 can be epitaxially grown on the surface of nanowires. The results showed that the radial growth rate of the Si nanocolumns remains constant with the increase of deposition time. Meanwhile, the radial growth rates are controllable by manipulating the hydrogen to silane gas flow rate ratio. The optical antireflection properties of the Si nanocolumns' decorated SiNW arrays are discussed in the text.

  7. Synthesis and transport characterization of electrochemically deposited CdTe nanowires

    Kaur, Jaskiran; Kaur, Harmanmeet; Singh, R. C.

    2018-04-01

    This paper reports the synthesis and characterization of CdTe nanowires. A thin polymeric films were irradiated with 80MeV Ag ions at a fluence of 8E7 ions/cm2, followed by UV irradiation and chemically etching in aqueous NaOH. Nanosizes go-through pores so formed were filled using a specially designed cell via electrodeposition. Nanowires so formed were further studied using SEM, I-V, UV and XRD analysis. SEM images show very smooth and uniform CdTe nanowires freely standing on the substrate. The in-situ I-V characteristics of nano-/micro structures was carried out at room temperature by leaving the structures embedded in the insulating template membrane itself.

  8. Selective growth of gallium nitride nanowires by femtosecond laser patterning

    Ng, D.K.T. [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore); Data Storage Institute, Agency for Science, Technology and Research, DSI Building, 5 Engineering Drive 1, Singapore 117608 (Singapore); Hong, M.H. [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore); Data Storage Institute, Agency for Science, Technology and Research, DSI Building, 5 Engineering Drive 1, Singapore 117608 (Singapore)], E-mail: HONG_Minghui@dsi.a-star.edu.sg; Tan, L.S. [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore); Zhou, Y. [Data Storage Institute, Agency for Science, Technology and Research, DSI Building, 5 Engineering Drive 1, Singapore 117608 (Singapore); Department of Mechanical Engineering, National University of Singapore, 2 Engineering Drive 3, Singapore 117576 (Singapore); Chen, G.X. [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore)

    2008-01-31

    We report on gallium nitride (GaN) nanowires grown using pulsed laser ablation, adopting the vapor-liquid-solid (VLS) growth mechanism. The GaN nanowires are obtained based on the principle that a catalyst is required to initiate the nanowires growth. Locations of the GaN nanowires are patterned using femtosecond laser and focused ion beam. Scanning electron microscopy (SEM) is used to characterize the nanowires. This patterning of GaN nanowires will enable selective growth of nanowires and bottom-up assembly of integrated electronic and photonic devices.

  9. Nanowire sensors and arrays for chemical/biomolecule detection

    Yun, Minhee; Lee, Choonsup; Vasquez, Richard P.; Ramanathan, K.; Bangar, M. A.; Chen, W.; Mulchandan, A.; Myung, N. V.

    2005-01-01

    We report electrochemical growth of single nanowire based sensors using e-beam patterned electrolyte channels, potentially enabling the controlled fabrication of individually addressable high density arrays. The electrodeposition technique results in nanowires with controlled dimensions, positions, alignments, and chemical compositions. Using this technique, we have fabricated single palladium nanowires with diameters ranging between 75 nm and 300 nm and conducting polymer nanowires (polypyrrole and polyaniline) with diameters between 100 nm and 200 nm. Using these single nanowires, we have successfully demonstrated gas sensing with Pd nanowires and pH sensing with polypirrole nanowires.

  10. Selective growth of gallium nitride nanowires by femtosecond laser patterning

    Ng, D.K.T.; Hong, M.H.; Tan, L.S.; Zhou, Y.; Chen, G.X.

    2008-01-01

    We report on gallium nitride (GaN) nanowires grown using pulsed laser ablation, adopting the vapor-liquid-solid (VLS) growth mechanism. The GaN nanowires are obtained based on the principle that a catalyst is required to initiate the nanowires growth. Locations of the GaN nanowires are patterned using femtosecond laser and focused ion beam. Scanning electron microscopy (SEM) is used to characterize the nanowires. This patterning of GaN nanowires will enable selective growth of nanowires and bottom-up assembly of integrated electronic and photonic devices

  11. Enhanced photovoltaic performance of an inclined nanowire array solar cell.

    Wu, Yao; Yan, Xin; Zhang, Xia; Ren, Xiaomin

    2015-11-30

    An innovative solar cell based on inclined p-i-n nanowire array is designed and analyzed. The results show that the inclined geometry can sufficiently increase the conversion efficiency of solar cells by enhancing the absorption of light in the active region. By tuning the nanowire array density, nanowire diameter, nanowire length, as well as the proportion of intrinsic region of the inclined nanowire solar cell, a remarkable efficiency in excess of 16% can be obtained in GaAs. Similar results have been obtained in InP and Si nanowire solar cells, demonstrating the universality of the performance enhancement of inclined nanowire arrays.

  12. Angular Magnetoresistance of Nanowires with Alternating Cobalt and Nickel Segments

    Mohammed, Hanan

    2017-06-22

    Magnetization reversal in segmented Co/Ni nanowires with varying number of segments was studied using angular Magnetoresistance (MR) measurements on isolated nanowires. The MR measurements offer an insight into the pinning of domain walls within the nanowires. Angular MR measurements were performed on nanowires with two and multiple segments by varying the angle between the applied magnetic field and nanowire (−90° ≤θ≤90°). The angular MR measurements reveal that at lower values of θ the switching fields are nearly identical for the multisegmented and two-segmented nanowires, whereas at higher values of θ, a decrease in the switching field is observed in the case of two segmented nanowires. The two segmented nanowires generally exhibit a single domain wall pinning event, whereas an increased number of pinning events are characteristic of the multisegmented nanowires at higher values of θ. In-situ magnetic force microscopy substantiates reversal by domain wall nucleation and propagation in multisegmented nanowires.

  13. Angular Magnetoresistance of Nanowires with Alternating Cobalt and Nickel Segments

    Mohammed, Hanan; Corte-Leon, H.; Ivanov, Yurii P.; Moreno, J. A.; Kazakova, O.; Kosel, Jü rgen

    2017-01-01

    Magnetization reversal in segmented Co/Ni nanowires with varying number of segments was studied using angular Magnetoresistance (MR) measurements on isolated nanowires. The MR measurements offer an insight into the pinning of domain walls within the nanowires. Angular MR measurements were performed on nanowires with two and multiple segments by varying the angle between the applied magnetic field and nanowire (−90° ≤θ≤90°). The angular MR measurements reveal that at lower values of θ the switching fields are nearly identical for the multisegmented and two-segmented nanowires, whereas at higher values of θ, a decrease in the switching field is observed in the case of two segmented nanowires. The two segmented nanowires generally exhibit a single domain wall pinning event, whereas an increased number of pinning events are characteristic of the multisegmented nanowires at higher values of θ. In-situ magnetic force microscopy substantiates reversal by domain wall nucleation and propagation in multisegmented nanowires.

  14. Moessbauer study of Fe-Co nanowires

    Chen Ziyu [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou (China)]. E-mail: chenzy@lzu.edu.cn; Zhan Qingfeng; Xue Desheng; Li Fashen [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou (China); Zhou Xuezhi; Kunkel, Henry; Williams, Gwyn [Department of Physics and Astronomy, the University of Manitoba (Canada)

    2002-01-28

    Arrays of Fe{sub 1-x}Co{sub x} (0.0{<=}x{<=}0.92) nanowires have been prepared by an electrochemical process, co-depositing Fe and Co atoms into the pores of anodic aluminium; their compositions were determined by atomic absorption spectroscopy. Transmission electron microscope results show that the nanowires are regularly spaced and uniform in shape with lengths of about 7.5 {mu}m and diameters of 20 nm. The x-ray diffraction indicates a texture in the deposited nanowires. For the composition below 82 at.% cobalt, the nanowires had a body-centred-cubic structure with a [110] preferred orientation. For the 92 at.% cobalt sample, the alloy exhibited a mixture of bcc and face-centred-cubic structure. The room temperature {sup 57}Fe Moessbauer spectra of the arrays of Fe{sub 1-x}Co{sub x} nanowires have second and fifth absorption lines of the six-line pattern with almost zero intensity, indicating that the internal magnetic field in the nanowires lies along the long axis of the nanowire. The maximum values of the hyperfine field (B{sub hf} 36.6{+-}0.1 T) and isomer shift (IS=0.06{+-}0.01 mm s-1) occur for 44 at.% cobalt. The variations of the isomer shift and the linewidths with composition indicate that the Fe{sub 1-x}Co{sub x} alloy nanowires around the equiatomic composition are in an atomistic disordered state. (author)

  15. Epitaxy of advanced nanowire quantum devices

    Gazibegovic, S.; Car, D.; Zhang, H.; Balk, S.C.; Logan, J.A.; De Moor, M.W.A.; Cassidy, M.C.; Schmits, R.; Xu, D.; Wang, G.; Krogstrup, P.; Op Het Veld, R.L.M.; Zuo, K.; Vos, Y.; Shen, J.; Bouman, D.; Shojaei, B.; Pennachio, D.; Lee, J.S.; van Veldhoven, P.J.; Koelling, S.; Verheijen, M.A.; Kouwenhoven, L.P.; Palmstrøm, C.J.; Bakkers, E.P.A.M.

    2017-01-01

    Semiconductor nanowires are ideal for realizing various low-dimensional quantum devices. In particular, topological phases of matter hosting non-Abelian quasiparticles (such as anyons) can emerge when a semiconductor nanowire with strong spin-orbit coupling is brought into contact with a

  16. High-Performance Single Nanowire Tunnel Diodes

    Wallentin, Jesper; Persson, Johan Mikael; Wagner, Jakob Birkedal

    2010-01-01

    We demonstrate single nanowire tunnel diodes with room temperature peak current densities of up to 329 A/cm(2). Despite the large surface to volume ratio of the type-II InP-GaAs axial heterostructure nanowires, we measure peak to valley current ratios (PVCR) of up to 8.2 at room temperature and 27...

  17. Functionalization of magnetic nanowires by charged biopolymers

    Magnin, D.; Callegari, V.; Mátéfi-Tempfli, Stefan

    2008-01-01

    We report on a facile method for the preparation of biocompatible and bioactive magnetic nanowires. The method consists of the direct deposition of polysaccharides by layer-by-layer (LbL) assembly onto a brush of metallic nanowires; obtained by electrodeposition of the metal within the nanopores ...

  18. Impact of growth temperature on the crystal habits, forms and structures of VO2 nanocrystals

    Loeffler, Stefan; Auer, Erwin; Lugstein, Alois; Bertagnolli, Emmerich; Weil, Matthias

    2011-01-01

    We investigated the impact of the process temperature on the habits, forms and crystal structure of VO 2 nanocrystals grown by a vapor-transport method on (0001) quartz substrates. Four distinct growth regimes were discerned: orthorhombic nanowires, sheets, hemispheres, and nanowires with a monoclinic structure. The nanostructures were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), and transmission electron microscopy (TEM). I/V characterization of individual nanowires was enabled by Ti/Au contact formation via electron beam lithography and lift-off techniques. The expected metal-insulator transition (MIT) was found in monoclinic VO 2 nanowires. (orig.)

  19. Nanowire-decorated microscale metallic electrodes

    Vlad, A.; Mátéfi-Tempfli, M.; Antohe, V.A.

    2008-01-01

    The fabrication of metallic nanowire patterns within anodic alumina oxide (AAO) membranes on top of continuous conducting substrates are discussed. The fabrication protocol is based on the realization of nanowire patterns using supported nanoporous alumina templates (SNAT) prepared on top...... of lithographically defined metallic microelectrodes. The anodization of the aluminum permits electroplating only on top of the metallic electrodes, leading to the nanowire patterns having the same shape as the underlying metallic tracks. The variation in the fabricated structures between the patterned and non......-patterned substrates can be interpreted in terms of different behavior during anodization. The improved quality of fabricated nanowire patterns is clearly demonstrated by the SEM imaging and the uniform growth of nanowires inside the alumina template is observed without any significant height variation....

  20. Diamond nanowires: fabrication, structure, properties, and applications.

    Yu, Yuan; Wu, Liangzhuan; Zhi, Jinfang

    2014-12-22

    C(sp(3) )C-bonded diamond nanowires are wide band gap semiconductors that exhibit a combination of superior properties such as negative electron affinity, chemical inertness, high Young's modulus, the highest hardness, and room-temperature thermal conductivity. The creation of 1D diamond nanowires with their giant surface-to-volume ratio enhancements makes it possible to control and enhance the fundamental properties of diamond. Although theoretical comparisons with carbon nanotubes have shown that diamond nanowires are energetically and mechanically viable structures, reproducibly synthesizing the crystalline diamond nanowires has remained challenging. We present a comprehensive, up-to-date review of diamond nanowires, including a discussion of their synthesis along with their structures, properties, and applications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Excitonic terahertz photoconductivity in intrinsic semiconductor nanowires

    Yan, Jie-Yun

    2018-06-01

    Excitonic terahertz photoconductivity in intrinsic semiconductor nanowires is studied. Based on the excitonic theory, the numerical method to calculate the photoconductivity spectrum in the nanowires is developed, which can simulate optical pump terahertz-probe spectroscopy measurements on real nanowires and thereby calculate the typical photoconductivity spectrum. With the help of the energetic structure deduced from the calculated linear absorption spectrum, the numerically observed shift of the resonant peak in the photoconductivity spectrum is found to result from the dominant exciton transition between excited or continuum states to the ground state, and the quantitative analysis is in good agreement with the quantum plasmon model. Besides, the dependence of the photoconductivity on the polarization of the terahertz field is also discussed. The numerical method and supporting theoretical analysis provide a new tool for experimentalists to understand the terahertz photoconductivity in intrinsic semiconductor nanowires at low temperatures or for nanowires subjected to below bandgap photoexcitation, where excitonic effects dominate.

  2. Superconductive silicon nanowires using gallium beam lithography.

    Henry, Michael David; Jarecki, Robert Leo,

    2014-01-01

    This work was an early career LDRD investigating the idea of using a focused ion beam (FIB) to implant Ga into silicon to create embedded nanowires and/or fully suspended nanowires. The embedded Ga nanowires demonstrated electrical resistivity of 5 m-cm, conductivity down to 4 K, and acts as an Ohmic silicon contact. The suspended nanowires achieved dimensions down to 20 nm x 30 nm x 10 m with large sensitivity to pressure. These structures then performed well as Pirani gauges. Sputtered niobium was also developed in this research for use as a superconductive coating on the nanowire. Oxidation characteristics of Nb were detailed and a technique to place the Nb under tensile stress resulted in the Nb resisting bulk atmospheric oxidation for up to years.

  3. Precise Placement of Metallic Nanowires on a Substrate by Localized Electric Fields and Inter-Nanowire Electrostatic Interaction

    U Hyeok Choi

    2017-10-01

    Full Text Available Placing nanowires at the predetermined locations on a substrate represents one of the significant hurdles to be tackled for realization of heterogeneous nanowire systems. Here, we demonstrate spatially-controlled assembly of a single nanowire at the photolithographically recessed region at the electrode gap with high integration yield (~90%. Two popular routes, such as protruding electrode tips and recessed wells, for spatially-controlled nanowire alignment, are compared to investigate long-range dielectrophoretic nanowire attraction and short-range nanowire-nanowire electrostatic interaction for determining the final alignment of attracted nanowires. Furthermore, the post-assembly process has been developed and tested to make a robust electrical contact to the assembled nanowires, which removes any misaligned ones and connects the nanowires to the underlying electrodes of circuit.

  4. A simulation of laser energy absorption by nanowired surface

    Vasconcelos, Miguel F.S.; Ramos, Alexandre F., E-mail: miguel.vasconcelos@usp.br, E-mail: alex.ramos@usp.br [Universidade de São Paulo (USP), SP (Brazil). Escola de Artes, Ciências e Humanidades

    2017-07-01

    Despite recent advances on research about laser inertial fusion energy, to increase the portion of energy absorbed by the target's surface from lasers remains as an important challenge. The plasma formed during the initial instants of laser arrival shields the target and prevents the absorption of laser energy by the deeper layers of the material. One strategy to circumvent that effect is the construction of targets whose surfaces are populated with nanowires. The nanowired surfaces have increased absorption of laser energy and constitutes a promising pathway for enhancing laser-matter coupling. In our work we present the results of simulations aiming to investigate how target's geometrical properties might contribute for maximizing laser energy absorption by material. Simulations have been carried out using the software FLASH, a multi-physics platform developed by researchers from the University of Chicago, written in FORTRAN 90 and Python. Different tools for generating target's geometry and analysis of results were developed using Python. Our results show that a nanowired surfaces has an increased energy absorption when compared with non wired surface. The software for visualization developed in this work also allowed an analysis of the spatial dynamics of the target's temperature, electron density, ionization levels and temperature of the radiation emitted by it. (author)

  5. Simulations of backgate sandwich nanowire MOSFETs with improved device performance

    Zhao Hengliang; Zhu Huilong; Zhong Jian; Ma Xiaolong; Wei Xing; Zhao Chao; Chen Dapeng; Ye Tianchun

    2014-01-01

    We propose a novel backgate sandwich nanowire MOSFET (SNFET), which offers the advantages of ETSOI (dynamic backgate voltage controllability) and nanowire FETs (good short channel effect). A backgate is used for threshold voltage (V t ) control of the SNFET. Compared with a backgate FinFET with a punch-through stop layer (PTSL), the SNFET possesses improved device performance. 3D device simulations indicate that the SNFET has a three times larger overdrive current, a ∼75% smaller off leakage current, and reduced subthreshold swing (SS) and DIBL than those of a backgate FinFET when the nanowire (NW) and the fin are of equal width. A new process flow to fabricate the backgate SNFET is also proposed in this work. Our analytical model suggests that V t control by the backgate can be attributed to the capacitances formed by the frontgate, NW, and backgate. The SNFET devices are compatible with the latest state-of-the-art high-k/metal gate CMOS technology with the unique capability of independent backgate control for nFETs and pFETs, which is promising for sub-22 nm scaling down. (semiconductor devices)

  6. Variability study of Si nanowire FETs with different junction gradients

    Jun-Sik Yoon

    2016-01-01

    Full Text Available Random dopant fluctuation effects of gate-all-around Si nanowire field-effect transistors (FETs are investigated in terms of different diameters and junction gradients. The nanowire FETs with smaller diameters or shorter junction gradients increase relative variations of the drain currents and the mismatch of the drain currents between source-drain and drain-source bias change in the saturation regime. Smaller diameters decreased current drivability critically compared to standard deviations of the drain currents, thus inducing greater relative variations of the drain currents. Shorter junction gradients form high potential barriers in the source-side lightly-doped extension regions at on-state, which determines the magnitude of the drain currents and fluctuates the drain currents greatly under thermionic-emission mechanism. On the other hand, longer junction gradients affect lateral field to fluctuate the drain currents greatly. These physical phenomena coincide with correlations of the variations between drain currents and electrical parameters such as threshold voltages and parasitic resistances. The nanowire FETs with relatively-larger diameters and longer junction gradients without degrading short channel characteristics are suggested to minimize the relative variations and the mismatch of the drain currents.

  7. Ballistic Spin Field Effect Transistor Based on Silicon Nanowires

    Osintsev, Dmitri; Sverdlov, Viktor; Stanojevic, Zlatan; Selberherr, Siegfried

    2011-03-01

    We investigate the properties of ballistic spin field-effect transistors build on silicon nanowires. An accurate description of the conduction band based on the k . p} model is necessary in thin and narrow silicon nanostructures. The subband effective mass and subband splitting dependence on the nanowire dimensions is analyzed and used in the transport calculations. The spin transistor is formed by sandwiching the nanowire between two ferromagnetic metallic contacts. Delta-function barriers at the interfaces between the contacts and the silicon channel are introduced. The major contribution to the electric field-dependent spin-orbit interaction in confined silicon systems is due to the interface-induced inversion asymmetry which is of the Dresselhaus type. We study the current and conductance through the system for the contacts being in parallel and anti-parallel configurations. Differences between the [100] and [110] orientated structures are investigated in details. This work is supported by the European Research Council through the grant #247056 MOSILSPIN.

  8. A simulation of laser energy absorption by nanowired surface

    Vasconcelos, Miguel F.S.; Ramos, Alexandre F.

    2017-01-01

    Despite recent advances on research about laser inertial fusion energy, to increase the portion of energy absorbed by the target's surface from lasers remains as an important challenge. The plasma formed during the initial instants of laser arrival shields the target and prevents the absorption of laser energy by the deeper layers of the material. One strategy to circumvent that effect is the construction of targets whose surfaces are populated with nanowires. The nanowired surfaces have increased absorption of laser energy and constitutes a promising pathway for enhancing laser-matter coupling. In our work we present the results of simulations aiming to investigate how target's geometrical properties might contribute for maximizing laser energy absorption by material. Simulations have been carried out using the software FLASH, a multi-physics platform developed by researchers from the University of Chicago, written in FORTRAN 90 and Python. Different tools for generating target's geometry and analysis of results were developed using Python. Our results show that a nanowired surfaces has an increased energy absorption when compared with non wired surface. The software for visualization developed in this work also allowed an analysis of the spatial dynamics of the target's temperature, electron density, ionization levels and temperature of the radiation emitted by it. (author)

  9. Influence factors of the inter-nanowire thermal contact resistance in the stacked nanowires

    Wu, Dongxu; Huang, Congliang; Zhong, Jinxin; Lin, Zizhen

    2018-05-01

    The inter-nanowire thermal contact resistance is important for tuning the thermal conductivity of a nanocomposite for thermoelectric applications. In this paper, the stacked copper nanowires are applied for studying the thermal contact resistance. The stacked copper nanowires are firstly made by the cold-pressing method, and then the nanowire stacks are treated by sintering treatment. With the effect of the volumetric fraction of nanowires in the stack and the influence of the sintering-temperature on the thermal contact resistance discussed, results show that: The thermal conductivity of the 150-nm copper nanowires can be enlarged almost 2 times with the volumetric fraction increased from 32 to 56% because of the enlarged contact-area and contact number of a copper nanowire. When the sintering temperature increases from 293 to 673 K, the thermal conductivity of the stacked 300-nm nanowires could be enlarged almost 2.5 times by the sintering treatment, because of the improved lattice property of the contact zone. In conclusion, application of a high volumetric fraction or/and a sintering-treatment are effectivity to tune the inter-nanowire thermal contact resistance, and thus to tailor the thermal conductivity of a nanowire network or stack.

  10. Mechanical behavior enhancement of ZnO nanowire by embedding different nanowires

    Ali Vazinishayan

    2018-06-01

    Full Text Available In this work, we employed commercial finite element modeling (FEM software package ABAQUS to analyze mechanical properties of ZnO nanowire before and after embedding with different kinds of nanowires, having different materials and cross-section models such as Au (circular, Ag (pentagonal and Si (rectangular using three point bending technique. The length and diameter of the ZnO nanowire were measured to be 12,280 nm and 103.2 nm, respectively. In addition, Au, Ag and Si nanowires were considered to have the length of 12,280 nm and the diameter of 27 nm. It was found that after embedding Si nanowire with rectangular cross-section into the ZnO nanowire, the distribution of Von Misses stresses criterion, displacement and strain were decreased than the other nanowires embedded. The highest stiffness, the elastic deformation and the high strength against brittle failure have been made by Si nanowire comparison to the Au and Ag nanowires, respectively. Keywords: Nanowires, Material effects, Mechanical properties, Brittle failure

  11. Ion Beam Synthesis of Ge Nanowires. rev. ed.

    Mueller, T.

    2001-01-01

    The formation of Ge nanowires in V-grooves has been studied experimentally as well as theoretically. As substrate oxide covered Si V-grooves were used formed by anisotropic etching of (001)Si wafers and subsequent oxidation of their surface. Implantation of 1 x 10{sup 17} Ge{sup +}cm{sup -2} at 70 keV was carried out into the oxide layer covering the V-grooves. Ion irradiation induces shape changes of the V-grooves, which are captured in a novel continuum model of surface evolution. It describes theoretically the effects of sputtering, redeposition of sputtered atoms, and swelling. Thereby, the time evolution of the target surface is determined by a nonlinear integro-differential equation, which was solved numerically for the V-groove geometry. A very good agreement is achieved for the predicted surface shape and the shape observed in XTEM images. Surprisingly, the model predicts material (Si, O, Ge) transport into the V-groove bottom which also suggests an Ge accumulation there proven by STEM-EDX investigations. In this Ge rich bottom region, subsequent annealing in N{sub 2} atmosphere results in the formation of a nanowire by coalescence of Ge precipitates shown by XTEM images. The process of phase separation during the nanowire growth was studied by means of kinetic 3D lattice Monte-Carlo simulations. These simulations also indicate the disintegration of continuous wires into droplets mediated by thermal fluctuations. Energy considerations have identified a fragmentation threshold and a lower boundary for the droplet radii which were confirmed by the Monte Carlo simulation. The here given results indicate the possibility of achieving nanowires being several nanometers wide by further growth optimizations as well as chains of equally spaced clusters with nearly uniform diameter. (orig.)

  12. Structural and electronic properties of InN nanowire network grown by vapor-liquid-solid method

    B. K. Barick

    2015-05-01

    Full Text Available Growth of InN nanowires have been carried out on quartz substrates at different temperatures by vapor-liquid-solid (VLS technique using different thicknesses of Au catalyst layer. It has been found that a narrow window of Au layer thickness and growth temperature leads to multi-nucleation, in which each site acts as the origin of several nanowires. In this multi-nucleation regime, several tens of micrometer long wires with diameter as small as 20 nm are found to grow along [ 11 2 ̄ 0 ] direction (a-plane to form a dense network. Structural and electronic properties of these wires are studied. As grown nanowires show degenerate n-type behavior. Furthermore, x-ray photoemission study reveals an accumulation of electrons on the surface of these nanowires. Interestingly, the wire network shows persistence of photoconductivity for several hours after switching off the photoexcitation.

  13. Structural and electronic properties of InN nanowire network grown by vapor-liquid-solid method

    Barick, B. K.; Rodríguez-Fernández, Carlos; Cantarero, Andres; Dhar, S.

    2015-05-01

    Growth of InN nanowires have been carried out on quartz substrates at different temperatures by vapor-liquid-solid (VLS) technique using different thicknesses of Au catalyst layer. It has been found that a narrow window of Au layer thickness and growth temperature leads to multi-nucleation, in which each site acts as the origin of several nanowires. In this multi-nucleation regime, several tens of micrometer long wires with diameter as small as 20 nm are found to grow along [ 11 2 ¯ 0 ] direction (a-plane) to form a dense network. Structural and electronic properties of these wires are studied. As grown nanowires show degenerate n-type behavior. Furthermore, x-ray photoemission study reveals an accumulation of electrons on the surface of these nanowires. Interestingly, the wire network shows persistence of photoconductivity for several hours after switching off the photoexcitation.

  14. Structural and electronic properties of InN nanowire network grown by vapor-liquid-solid method

    Barick, B. K., E-mail: bkbarick@gmail.com, E-mail: subho-dh@yahoo.co.in; Dhar, S., E-mail: bkbarick@gmail.com, E-mail: subho-dh@yahoo.co.in [Department of Physics, Indian Institute of Technology, Bombay, Mumbai-400076 (India); Rodríguez-Fernández, Carlos; Cantarero, Andres [Materials Science Institute, University of Valencia, PO Box 22085, 46071 Valencia (Spain)

    2015-05-15

    Growth of InN nanowires have been carried out on quartz substrates at different temperatures by vapor-liquid-solid (VLS) technique using different thicknesses of Au catalyst layer. It has been found that a narrow window of Au layer thickness and growth temperature leads to multi-nucleation, in which each site acts as the origin of several nanowires. In this multi-nucleation regime, several tens of micrometer long wires with diameter as small as 20 nm are found to grow along [112{sup -}0] direction (a-plane) to form a dense network. Structural and electronic properties of these wires are studied. As grown nanowires show degenerate n-type behavior. Furthermore, x-ray photoemission study reveals an accumulation of electrons on the surface of these nanowires. Interestingly, the wire network shows persistence of photoconductivity for several hours after switching off the photoexcitation.

  15. Shape Engineering Driven by Selective Growth of SnO2 on Doped Ga2O3 Nanowires.

    Alonso-Orts, Manuel; Sánchez, Ana M; Hindmarsh, Steven A; López, Iñaki; Nogales, Emilio; Piqueras, Javier; Méndez, Bianchi

    2017-01-11

    Tailoring the shape of complex nanostructures requires control of the growth process. In this work, we report on the selective growth of nanostructured tin oxide on gallium oxide nanowires leading to the formation of SnO 2 /Ga 2 O 3 complex nanostructures. Ga 2 O 3 nanowires decorated with either crossing SnO 2 nanowires or SnO 2 particles have been obtained in a single step treatment by thermal evaporation. The reason for this dual behavior is related to the growth direction of trunk Ga 2 O 3 nanowires. Ga 2 O 3 nanowires grown along the [001] direction favor the formation of crossing SnO 2 nanowires. Alternatively, SnO 2 forms rhombohedral particles on [110] Ga 2 O 3 nanowires leading to skewer-like structures. These complex oxide structures were grown by a catalyst-free vapor-solid process. When pure Ga and tin oxide were used as source materials and compacted powders of Ga 2 O 3 acted as substrates, [110] Ga 2 O 3 nanowires grow preferentially. High-resolution transmission electron microscopy analysis reveals epitaxial relationship lattice matching between the Ga 2 O 3 axis and SnO 2 particles, forming skewer-like structures. The addition of chromium oxide to the source materials modifies the growth direction of the trunk Ga 2 O 3 nanowires, growing along the [001], with crossing SnO 2 wires. The SnO 2 /Ga 2 O 3 junctions does not meet the lattice matching condition, forming a grain boundary. The electronic and optical properties have been studied by XPS and CL with high spatial resolution, enabling us to get both local chemical and electronic information on the surface in both type of structures. The results will allow tuning optical and electronic properties of oxide complex nanostructures locally as a function of the orientation. In particular, we report a dependence of the visible CL emission of SnO 2 on its particular shape. Orange emission dominates in SnO 2 /Ga 2 O 3 crossing wires while green-blue emission is observed in SnO 2 particles attached to Ga 2

  16. High-performance asymmetric supercapacitors based on core/shell cobalt oxide/carbon nanowire arrays with enhanced electrochemical energy storage

    Pan, G.X.; Xia, X.H.; Cao, F.; Chen, J.; Tang, P.S.; Zhang, Y.J.; Chen, H.F.

    2014-01-01

    Graphical abstract: - Highlights: • We prepared a self-supported porous Co 3 O 4 /C core/shell nanowire array. • Core/shell nanowire array showed high pseudo-capacitive properties. • Core/shell array structure was favorable for fast ion and electron transfer. - Abstract: High-reactivity electrode materials are indispensible for developing high-performance electrochemical energy storage devices. Herein, we report self-supported core/shell Co 3 O 4 /C nanowire arrays by using hydrothermal synthesis and chemical vapor deposition methods. A uniform and thin carbon shell is coated on the surface of Co 3 O 4 nanowire forming core/shell nanowires with diameters of ∼100 nm. Asymmetric supercapacitors have been assembled with the core/shell Co 3 O 4 /C nanowire arrays as the positive electrode and activated carbon (AC) as the negative electrode. The core/shell Co 3 O 4 /C nanowire arrays exhibit a specific capacity of 116 mAh g −1 at the working current of 100 mA (4 A g −1 ), and a long cycle life along with ∼ 92% retention after 8000 cycles at 4 A g −1 , higher than the unmodified Co 3 O 4 nanowire arrays (81 mAh g −1 at 4 A g −1 ). The introduction of uniform carbon layer into the core/shell structure is favorable for the enhancement of supercapacitor due to the improved electrical conductivity and reaction kinetics

  17. Intrinsic quantum dots in InAs nanowires

    Weis, Karl Martin Darius

    2013-01-01

    This work deals with InAs nanowire field effect transistors in back gate configuration. In such devices, quantum dots can form at low temperatures in the order of magnitude of a few Kelvin. These dots are henceforth referred to as intrinsic as they are not intentionally defined by electrodes. For the interpretation of their stability diagrams, a thorough knowledge of the structure and transport properties of the nanowires is required. Therefore, first of all, the influence of growth method and doping on the transport properties is studied at room temperature. The wires are grown by two types of metal-organic vapour phase epitaxy: a selective-area (SA-MOVPE) and an Au-catalyzed vapour-liquid-solid method (VLS-MOVPE). Transport data shows that the background doping of VLS-MOVPE wires is higher than for SA-MOVPE wires, but the variability of the transport properties is lower. The polytypism of the SA-MOVPE wires (they are composed of wurtzite and zinc blende segments) is a possible explanation for the second observation. Furthermore, it is shown that the measured transport properties significantly depend on the dielectric environment of the nanowires and on the way the electrical measurements are done (two- or four-terminal configuration). The conductivity is tunable via doping and the gate voltage. Conductivity measurements in the temperature range from 10 K to 300 K show that different transport regimes can occur (partially metallic behaviour for sufficiently high conductivity, otherwise purely semiconducting behaviour). This is attributed to different positions of the Fermi level and thus, a different effect of potential fluctuations. If conductivity and temperature are sufficiently low, the onset of Coulomb blockade is observed for semiconducting samples. It is even possible to tune the very same sample to different regimes via the gate voltage. The semiconducting behaviour observed in many samples contradicts the Thomas-Fermi theory. This is attributed to the

  18. Exclusive nonleptonic B→VV decays

    Barik, N.; Naimuddin, Sk.; Dash, P. C.; Kar, Susmita

    2009-01-01

    The exclusive two-body nonleptonic B→VV decays are investigated, within the factorization approximation, in the relativistic independent quark model based on a confining potential in the scalar-vector harmonic form. The branching ratios and the longitudinal polarization fraction (R L ) are calculated yielding the model predictions in agreement with experiment. Our predicted CP-odd fraction (R perpendicular ) for B→D*D (s) * decays are in general agreement with other model predictions and within the existing experimental limit.

  19. Exclusive hadron production in two photon reactions

    Poppe, M.

    1986-02-01

    This paper summarises experimental results on exclusive hadron production in two photon collisions at electron positron storage rings and attempts some interpretation. Experimental know how is described and new suggestions are made for future analyses. New model calculations on resonance form factors and pair production amplitudes are presented. The two photon vertex is decomposed such that experiments can be parameterised with the minimal number of free parameters. Selection rules for off shell photon collisions are given in addition to Yang's theorems. (orig.)

  20. Enhancement of tribofilm formation from water lubricated PEEK composites by copper nanowires

    Gao, Chuanping; Fan, Shuguang; Zhang, Shengmao; Zhang, Pingyu; Wang, Qihua

    2018-06-01

    A high-performance tribofilm is crucial to enhance the tribological performance of tribomaterials. In order to promote tribofilm formation under water lubrication conditions, copper nanowires as a functional nanomaterial were filled into neat polyetheretherketone (PEEK) and PEEK10SCF8Gr (i.e., PEEK filled with 10 vol.% short carbon fibers and 8 vol.% graphite flakes). The results show that the addition of copper nanowires and a greater applied load can enhance materials transfer and tribofilm formation during sliding process. Moreover, copper nanowires can share a part of applied load, and retard the fatigue effect to some extent. In addition, copper nanowires, carbon fibers and graphite can synergistically improve the tribological performance and the tribofilm formation under water lubrication and severe working conditions. In particular, only 0.5 vol.% copper nanowires can form a high-performance tribofilm, which endows superior lubricating property and wear resistance capacity of the PEEK10SCF8Gr. Furthermore, the surface analysis indicates that the tribofilm contains some transferred materials and the products from tribochemical reactions as well.

  1. Carbon−Silicon Core−Shell Nanowires as High Capacity Electrode for Lithium Ion Batteries

    Cui, Li-Feng

    2009-09-09

    We introduce a novel design of carbon-silicon core-shell nanowires for high power and long life lithium battery electrodes. Amorphous silicon was coated onto carbon nanofibers to form a core-shell structure and the resulted core-shell nanowires showed great performance as anode material. Since carbon has a much smaller capacity compared to silicon, the carbon core experiences less structural stress or damage during lithium cycling and can function as a mechanical support and an efficient electron conducting pathway. These nanowires have a high charge storage capacity of ∼2000 mAh/g and good cycling life. They also have a high Coulmbic efficiency of 90% for the first cycle and 98-99.6% for the following cycles. A full cell composed of LiCoO2 cathode and carbon-silicon core-shell nanowire anode is also demonstrated. Significantly, using these core-shell nanowires we have obtained high mass loading and an area capacity of ∼4 mAh/cm2, which is comparable to commercial battery values. © 2009 American Chemical Society.

  2. A general melt-injection-decomposition route to oriented metal oxide nanowire arrays

    Han, Dongqiang; Zhang, Xinwei; Hua, Zhenghe; Yang, Shaoguang

    2016-12-01

    In this manuscript, a general melt-injection-decomposition (MID) route has been proposed and realized for the fabrication of oriented metal oxide nanowire arrays. Nitrate was used as the starting materials, which was injected into the nanopores of the anodic aluminum oxide (AAO) membrane through the capillarity action in its liquid state. At higher temperature, the nitrate decomposed into corresponding metal oxide within the nanopores of the AAO membrane. Oriented metal oxide nanowire arrays were formed within the AAO membrane as a result of the confinement of the nanopores. Four kinds of metal oxide (CuO, Mn2O3, Co3O4 and Cr2O3) nanowire arrays are presented here as examples fabricated by this newly developed process. X-ray diffraction, scanning electron microscopy and transmission electron microscopy studies showed clear evidence of the formations of the oriented metal oxide nanowire arrays. Formation mechanism of the metal oxide nanowire arrays is discussed based on the Thermogravimetry and Differential Thermal Analysis measurement results.

  3. A novel application of the CuI thin film for preparing thin copper nanowires

    Shi Shuo; Sun Jialin; Zhang Jianhong; Cao Yang

    2005-01-01

    We present a novel application of the CuI thin film for preparing thin copper nanowires under a direct current electric field (DCEF). The CuI thin film was used as a medium for transmitting cuprous ions during the growing process of copper nanowires. As electrodes are the source of cuprous ions, high-purity copper films were deposited on both ends of the CuI thin film. At 353 K, under whole solid condition, without any templates, and having applied a DCEF of 1.5x10 4 V/m, cuprous ions were generated at the anode and migrated towards the cathode through the CuI film. At the edge of the cathode, cuprous ions obtained electrons and congregated to form a disordered thin copper nanowires bundle. The SEM images showed that these copper nanowires were from 10 to 20 nm in diameter and several hundred nanometers in length. The effect of the electric field intensity and the growth temperature on the diameter of the nanowires was also studied

  4. GaAs nanowire array solar cells with axial p-i-n junctions.

    Yao, Maoqing; Huang, Ningfeng; Cong, Sen; Chi, Chun-Yung; Seyedi, M Ashkan; Lin, Yen-Ting; Cao, Yu; Povinelli, Michelle L; Dapkus, P Daniel; Zhou, Chongwu

    2014-06-11

    Because of unique structural, optical, and electrical properties, solar cells based on semiconductor nanowires are a rapidly evolving scientific enterprise. Various approaches employing III-V nanowires have emerged, among which GaAs, especially, is under intense research and development. Most reported GaAs nanowire solar cells form p-n junctions in the radial direction; however, nanowires using axial junction may enable the attainment of high open circuit voltage (Voc) and integration into multijunction solar cells. Here, we report GaAs nanowire solar cells with axial p-i-n junctions that achieve 7.58% efficiency. Simulations show that axial junctions are more tolerant to doping variation than radial junctions and lead to higher Voc under certain conditions. We further study the effect of wire diameter and junction depth using electrical characterization and cathodoluminescence. The results show that large diameter and shallow junctions are essential for a high extraction efficiency. Our approach opens up great opportunity for future low-cost, high-efficiency photovoltaics.

  5. Relationship between BaTiO₃ nanowire aspect ratio and the dielectric permittivity of nanocomposites.

    Tang, Haixiong; Zhou, Zhi; Sodano, Henry A

    2014-04-23

    The aspect ratio of barium titanate (BaTiO3) nanowires is demonstrated to be successfully controlled by adjusting the temperature of the hydrothermal growth from 150 to 240 °C, corresponding to aspect ratios from 9.3 to 45.8, respectively. Polyvinylidene fluoride (PVDF) nanocomposites are formed from the various aspect ratio nanowires and the relationship between the dielectric constant of the nanocomposite and the aspect ratio of the fillers is quantified. It was found that the dielectric constant of the nanocomposite increases with the aspect ratio of the nanowires. Nanocomposites with 30 vol % BaTiO3 nanowires and an aspect ratio of 45.8 can reach a dielectric constant of 44.3, which is 30.7% higher than samples with an aspect ratio of 9.3 and 352% larger than the polymer matrix. These results demonstrate that using high-aspect-ratio nanowires is an effective way to control and improve the dielectric performance of nanocomposites for future capacitor applications.

  6. Sculptured platinum nanowire counter electrodes for dye-sensitized solar cells

    Lee, Hyeonseok [Department of Electrical Engineering, Pennsylvania State University, University Park 16802 (United States); Horn, Mark W., E-mail: MHorn@engr.psu.edu [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park 16802-6812 (United States)

    2013-07-01

    Sculptured platinum nanowire thin films were formed by oblique angle electron beam evaporation with a 5° vapor incidence angle and incorporated as counter electrodes for dye-sensitized solar cells (DSSCs). For the comparison of the performance, bare fluorine doped tin oxide, planar Pt electrodes and counter electrodes treated with chloroplatinic acid were prepared. The sculptured Pt nanowire electrodes showed five times lower charge transfer resistance (0.121 [Ω∗cm{sup 2}]) than that of Pt planar electrode (0.578 [Ω∗cm{sup 2}]) and when the Pt nanowire electrodes are treated with an H{sub 2}PtCl{sub 6} solution have more than ten times lower charge transfer resistance (0.04025 [Ω∗cm{sup 2}]). Moreover, Pt nanowire films used as a counter electrode lead to enhancement in current density and efficiency in comparison with Pt planar counter electrodes. The conversion efficiency with planar electrodes was 5.1 [%] while the efficiency of DSSC with platinum nanowire counter electrodes reached to 5.63 [%] under AM 1.5 illumination. - Highlights: • Pt sculptured thin films (STFs) fabricated by electron beam evaporator. • The STFs featured higher roughness and lower charge transfer resistance. • Improved performance of dye-sensitized solar cells by Pt STFs counter electrodes.

  7. Transparent arrays of silver nanowire rings driven by evaporation of sessile droplets

    Wang, Xiaofeng; Kang, Giho; Seong, Baekhoon; Chae, Illkyeong; Teguh Yudistira, Hadi; Lee, Hyungdong; Kim, Hyunggun; Byun, Doyoung

    2017-11-01

    A coffee-ring pattern can be yielded on the three-phase contact line following evaporation of sessile droplets with suspended insoluble solutes, such as particles, DNA molecules, and mammalian cells. The formation of such coffee-ring, together with their suppression has been applied in printing and coating technologies. We present here an experimental study on the assembly of silver nanowires inside an evaporating droplet of a colloidal suspension. The effects of nanowire length and concentration on coffee-ring formation of the colloidal suspension were investigated. Several sizes of NWs with an aspect ratio between 50 and 1000 were systematically investigated to fabricate coffee-ring patterns. Larger droplets containing shorter nanowires formed clearer ring deposits after evaporation. An order-to-disorder transition of the nanowires’ alignment was found inside the rings. A printing technique with the evaporation process enabled fabrication of arrays of silver nanowire rings. We could manipulate the patterns silver nanowire rings, which might be applied to the transparent and flexible electrode.

  8. Transparent arrays of silver nanowire rings driven by evaporation of sessile droplets

    Wang, Xiaofeng; Kang, Giho; Seong, Baekhoon; Chae, Illkyeong; Yudistira, Hadi Teguh; Lee, Hyungdong; Byun, Doyoung; Kim, Hyunggun

    2017-01-01

    A coffee-ring pattern can be yielded on the three-phase contact line following evaporation of sessile droplets with suspended insoluble solutes, such as particles, DNA molecules, and mammalian cells. The formation of such coffee-ring, together with their suppression has been applied in printing and coating technologies. We present here an experimental study on the assembly of silver nanowires inside an evaporating droplet of a colloidal suspension. The effects of nanowire length and concentration on coffee-ring formation of the colloidal suspension were investigated. Several sizes of NWs with an aspect ratio between 50 and 1000 were systematically investigated to fabricate coffee-ring patterns. Larger droplets containing shorter nanowires formed clearer ring deposits after evaporation. An order-to-disorder transition of the nanowires’ alignment was found inside the rings. A printing technique with the evaporation process enabled fabrication of arrays of silver nanowire rings. We could manipulate the patterns silver nanowire rings, which might be applied to the transparent and flexible electrode. (paper)

  9. Energy transfer in nanowire solar cells with photon-harvesting shells

    Peters, C. H.

    2009-01-01

    The concept of a nanowire solar cell with photon-harvesting shells is presented. In this architecture, organic molecules which absorb strongly in the near infrared where silicon absorbs weakly are coupled to silicon nanowires (SiNWs). This enables an array of 7-μm -long nanowires with a diameter of 50 nm to absorb over 85% of the photons above the bandgap of silicon. The organic molecules are bonded to the surface of the SiNWs forming a thin shell. They absorb the low-energy photons and subsequently transfer the energy to the SiNWs via Förster resonant energy transfer, creating free electrons and holes within the SiNWs. The carriers are then separated at a radial p-n junction in a nanowire and extracted at the respective electrodes. The shortness of the nanowires is expected to lower the dark current due to the decrease in p-n junction surface area, which scales linearly with wire length. The theoretical power conversion efficiency is 15%. To demonstrate this concept, we measure a 60% increase in photocurrent from a planar silicon-on-insulator diode when a 5 nm layer of poly[2-methoxy-5-(2′ -ethyl-hexyloxy)-1,4-phenylene vinylene is applied to the surface of the silicon. This increase is in excellent agreement with theoretical predictions. © 2009 American Institute of Physics.

  10. Generalized exclusion and Hopf algebras

    Yildiz, A

    2002-01-01

    We propose a generalized oscillator algebra at the roots of unity with generalized exclusion and we investigate the braided Hopf structure. We find that there are two solutions: these are the generalized exclusions of the bosonic and fermionic types. We also discuss the covariance properties of these oscillators

  11. Capillarity creates single-crystal calcite nanowires from amorphous calcium carbonate.

    Kim, Yi-Yeoun; Hetherington, Nicola B J; Noel, Elizabeth H; Kröger, Roland; Charnock, John M; Christenson, Hugo K; Meldrum, Fiona C

    2011-12-23

    Single-crystal calcite nanowires are formed by crystallization of morphologically equivalent amorphous calcium carbonate (ACC) particles within the pores of track etch membranes. The polyaspartic acid stabilized ACC is drawn into the membrane pores by capillary action, and the single-crystal nature of the nanowires is attributed to the limited contact of the intramembrane ACC particle with the bulk solution. The reaction environment then supports transformation to a single-crystal product. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Encapsulation of Polythiophene by Glycopolymer for Water Soluble Nano-wire

    T Fukuda; Y Inoue; T Koga; M Matsuoka; Y Miura

    2011-12-31

    A water-soluble polythiophene (PT) was prepared by the self-assembling complex with a glycopolymer. The glycopolymer of poly(N-p-vinylbenzyl-D-lactonamide) (PVLA) formed self-assembling cylindrical structure based on the amphiphilicity even after the complexation with PT. We confirmed the improved optical functionality of PT due to the longer conjugated {pi}-orbital. It suggested that PT behaved like molecular nanowire with the self-assembled structure in the hydrophobic core of PVLA. PVLA-PT also showed specific biorecognition against corresponding lectin. These results suggested that the bioactive nanowire formation of PT with the glycopolymer was developed.

  13. Physical origin of the incubation time of self-induced GaN nanowires

    Consonni, V.; Trampert, A.; Geelhaar, L.; Riechert, H.

    2011-01-01

    The nucleation process of self-induced GaN nanowires grown by molecular beam epitaxy has been investigated by reflection high-energy electron diffraction measurements. It is found that stable nuclei in the form of spherical cap-shaped islands develop only after an incubation time that is strongly dependent upon the growth conditions. Its evolution with the growth temperature and gallium rate has been described within standard island nucleation theory, revealing a nucleation energy of 4.9 ± 0.1 eV and a very small nucleus critical size. The consideration of the incubation time is critical for the control of the nanowire morphology.

  14. Transparently wrap-gated semiconductor nanowire arrays for studies of gate-controlled photoluminescence

    Nylund, Gustav; Storm, Kristian; Torstensson, Henrik; Wallentin, Jesper; Borgström, Magnus T.; Hessman, Dan; Samuelson, Lars [Solid State Physics, Nanometer Structure Consortium, Lund University, Box 118, S-221 00 Lund (Sweden)

    2013-12-04

    We present a technique to measure gate-controlled photoluminescence (PL) on arrays of semiconductor nanowire (NW) capacitors using a transparent film of Indium-Tin-Oxide (ITO) wrapping around the nanowires as the gate electrode. By tuning the wrap-gate voltage, it is possible to increase the PL peak intensity of an array of undoped InP NWs by more than an order of magnitude. The fine structure of the PL spectrum reveals three subpeaks whose relative peak intensities change with gate voltage. We interpret this as gate-controlled state-filling of luminescing quantum dot segments formed by zincblende stacking faults in the mainly wurtzite NW crystal structure.

  15. Room temperature synthesis and photocatalytic property of AgO/Ag2Mo2O7 heterojunction nanowires

    Hashim, Muhammad; Hu, Chenguo; Wang, Xue; Wan, Buyong; Xu, Jing

    2012-01-01

    Graphical abstract: The AgO nanoparticles are attached on the surface of the Ag 2 Mo 2 O 7 nanowires to form a heterojunction structure. The AgO nanoparticles start embedding into the nanowires with increasing reaction temperature or time. Highlights: ► AgO/Ag 2 Mo 2 O 7 heterojunction NWs were synthesized at room temperature for the first time. ► AgO particles embed into the Ag 2 Mo 2 O 7 NWs with increase in reaction time and temperature. ► The heterojunction NWs display much better photocatalytic activity than the none-heterojunction NWs. ► The catalytic mechanism was proposed. -- Abstract: AgO/Ag 2 Mo 2 O 7 heterojunction nanowires were synthesized at temperatures of 25 °C, 50 °C, 80 °C, and 110 °C, under magnetic stirring in solution reaction. The catalytic activity of AgO/Ag 2 Mo 2 O 7 nanowires was evaluated by the degradation of Rhodmine B dye under the irradiation of the simulated sunlight. The synthesized samples were characterized by X-ray diffractometer, energy dispersive spectrometry, X-ray photoelectron spectrometer, scanning electron microscopy, and transmission electron microscopy. The results show that the AgO nanoparticles are attached on the surface of the Ag 2 Mo 2 O 7 nanowires to form a heterojunction structure. The length of the nanowires is up to 10 μm and the size of the AgO nanoparticles is 10–20 nm. The length of nanowires increases with increasing reaction time and temperature while the AgO particles are gradually embedded into the nanowires. The photocatalytic activity is greatly improved for the AgO/Ag 2 Mo 2 O 7 heterojunction nanowires compared with that of the pure Ag 2 Mo 2 O 7 nanowires, indicating a remarkable role of AgO particles on the Ag 2 Mo 2 O 7 nanowires in the photodegradation.

  16. The Mn site in Mn-doped GaAs nanowires: an EXAFS study

    D’Acapito, F; Rovezzi, M; Boscherini, F; Jabeen, F; Bais, G; Piccin, M; Rubini, S; Martelli, F

    2012-01-01

    We present an EXAFS study of the Mn atomic environment in Mn-doped GaAs nanowires. Mn doping has been obtained either via the diffusion of the Mn used as seed for the nanowire growth or by providing Mn during the growth of Au-induced wires. As a general finding, we observe that Mn forms chemical bonds with As but is not incorporated in a substitutional site. In Mn-induced GaAs wires, Mn is mostly found bonded to As in a rather disordered environment and with a stretched bond length, reminiscent of that exhibited by MnAs phases. In Au-seeded nanowires, along with stretched MnAs coordination, we have found the presence of Mn in a MnAu intermetallic compound. (paper)

  17. Resonant tunnelling features in a suspended silicon nanowire single-hole transistor

    Llobet, Jordi; Pérez-Murano, Francesc, E-mail: francesc.perez@csic.es, E-mail: z.durrani@imperial.ac.uk [Institut de Microelectrònica de Barcelona (IMB-CNM CSIC), Campus UAB, E-08193 Bellaterra, Catalonia (Spain); Krali, Emiljana; Wang, Chen; Jones, Mervyn E.; Durrani, Zahid A. K., E-mail: francesc.perez@csic.es, E-mail: z.durrani@imperial.ac.uk [Department of Electrical and Electronic Engineering, Imperial College London, South Kensington, London SW7 2AZ (United Kingdom); Arbiol, Jordi [Institució Catalana de Recerca i Estudis Avançats (ICREA) and Institut Català de Nanociència i Nanotecnologia (ICN2), Campus UAB, 08193 Bellaterra, Catalonia (Spain); CELLS-ALBA Synchrotron Light Facility, 08290 Cerdanyola, Catalonia (Spain)

    2015-11-30

    Suspended silicon nanowires have significant potential for a broad spectrum of device applications. A suspended p-type Si nanowire incorporating Si nanocrystal quantum dots has been used to form a single-hole transistor. Transistor fabrication uses a novel and rapid process, based on focused gallium ion beam exposure and anisotropic wet etching, generating <10 nm nanocrystals inside suspended Si nanowires. Electrical characteristics at 10 K show Coulomb diamonds with charging energy ∼27 meV, associated with a single dominant nanocrystal. Resonant tunnelling features with energy spacing ∼10 meV are observed, parallel to both diamond edges. These may be associated either with excited states or hole–acoustic phonon interactions, in the nanocrystal. In the latter case, the energy spacing corresponds well with reported Raman spectroscopy results and phonon spectra calculations.

  18. Epitaxial nanowire formation in metamorphic GaAs/GaPAs short-period superlattices

    Zheng, Nan; Ahrenkiel, S. Phillip

    2017-07-01

    Metamorphic growth presents routes to novel nanomaterials with unique properties that may be suitable for a range of applications. We discuss self-assembled, epitaxial nanowires formed during metalorganic chemical vapor deposition of metamorphic GaAs/GaPAs short-period superlattices. The heterostructures incorporate strain-engineered GaPAs compositional grades on 6°-B miscut GaAs substrates. Lateral diffusion within the SPS into vertically aligned, three-dimensional columns results in nanowires extending along A directions with a lateral period of 70-90 nm. The microstructure is probed by transmission electron microscopy to confirm the presence of coherent GaAs nanowires within GaPAs barriers. The compositional profile is inferred from analysis of {200} dark-field image contrast and lattice images.

  19. "High Quantum Efficiency of Band-Edge Emission from ZnO Nanowires"

    GARGAS, DANIEL; GAO, HANWEI; WANG, HUNGTA; PEIDONG, YANG

    2010-12-01

    External quantum efficiency (EQE) of photoluminescence as high as 20 percent from isolated ZnO nanowires were measured at room temperature. The EQE was found to be highly dependent on photoexcitation density, which underscores the importance of uniform optical excitation during the EQE measurement. An integrating sphere coupled to a microscopic imaging system was used in this work, which enabled the EQE measurement on isolated ZnO nanowires. The EQE values obtained here are significantly higher than those reported for ZnO materials in forms of bulk, thin films or powders. Additional insight on the radiative extraction factor of one-dimensional nanostructures was gained by measuring the internal quantum efficiency of individual nanowires. Such quantitative EQE measurements provide a sensitive, noninvasive method to characterize the optical properties of low-dimensional nanostructures and allow tuning of synthesis parameters for optimization of nanoscale materials.

  20. Resonant tunnelling features in a suspended silicon nanowire single-hole transistor

    Llobet, Jordi; Pérez-Murano, Francesc; Krali, Emiljana; Wang, Chen; Jones, Mervyn E.; Durrani, Zahid A. K.; Arbiol, Jordi

    2015-01-01

    Suspended silicon nanowires have significant potential for a broad spectrum of device applications. A suspended p-type Si nanowire incorporating Si nanocrystal quantum dots has been used to form a single-hole transistor. Transistor fabrication uses a novel and rapid process, based on focused gallium ion beam exposure and anisotropic wet etching, generating <10 nm nanocrystals inside suspended Si nanowires. Electrical characteristics at 10 K show Coulomb diamonds with charging energy ∼27 meV, associated with a single dominant nanocrystal. Resonant tunnelling features with energy spacing ∼10 meV are observed, parallel to both diamond edges. These may be associated either with excited states or hole–acoustic phonon interactions, in the nanocrystal. In the latter case, the energy spacing corresponds well with reported Raman spectroscopy results and phonon spectra calculations

  1. Laser induced augmentation of silver nanospheres to nanowires in ethanol fostered by Poly Vinyl Pyrrolidone

    Sebastian, Suneetha, E-mail: sunikutty@gmail.com; Linslal, C.L.; Vallabhan, C.P.G.; Nampoori, V.P.N.; Radhakrishnan, P.; Kailasnath, M.

    2014-11-30

    Highlights: • Silver nanospheres are synthesised in ethanol containing Poly Vinyl Pyrrolidone which acts as a polymeric capping agent to nanoparticles thus improving its stability. • Laser irradiation onto the colloidal solution of silver nanoparticles produced well defined nanowires through ripening mechanism promoted by Poly Vinyl Pyrrolidone. • Nanowires so formed are having an average length of 8.7 μm and width of 160 nm. - Abstract: Stable uniform silver nanospheres having an average diameter of 45 nm are synthesised in ethanol containing Poly Vinyl Pyrrolidone using Laser Ablation in Liquid technique. Further irradiation of the nanocolloidal solution by focussed laser beam produced stable well defined silver nanowires through ripening mechanism fostered by the presence of Poly Vinyl Pyrrolidone. Confirmation of the mechanism is obtained from Transmission Electron Microscopic images of the nanocolloidal solution irradiated for different time durations.

  2. New opportunities with nanowires

    Bakkers, E.P.A.M.; Hauge, H.I.T.; Li, A.; Assali, S.; Dijkstra, A.; Tucker, R.T.; Ren, Y.; Conesa Boj, S.; Verheijen, M.A.

    2016-01-01

    Summary form only given. Light emission from Si, would allow integration of electronic and optical functionality in the main electronics platform technology, but this has been impossible due to the indirect band gap of Si. This talk will discuss 2 different approaches, using unique properties of

  3. Testing the exclusivity effect in location memory.

    Clark, Daniel P A; Dunn, Andrew K; Baguley, Thom

    2013-01-01

    There is growing literature exploring the possibility of parallel retrieval of location memories, although this literature focuses primarily on the speed of retrieval with little attention to the accuracy of location memory recall. Baguley, Lansdale, Lines, and Parkin (2006) found that when a person has two or more memories for an object's location, their recall accuracy suggests that only one representation can be retrieved at a time (exclusivity). This finding is counterintuitive given evidence of non-exclusive recall in the wider memory literature. The current experiment explored the exclusivity effect further and aimed to promote an alternative outcome (i.e., independence or superadditivity) by encouraging the participants to combine multiple representations of space at encoding or retrieval. This was encouraged by using anchor (points of reference) labels that could be combined to form a single strongly associated combination. It was hypothesised that the ability to combine the anchor labels would allow the two representations to be retrieved concurrently, generating higher levels of recall accuracy. The results demonstrate further support for the exclusivity hypothesis, showing no significant improvement in recall accuracy when there are multiple representations of a target object's location as compared to a single representation.

  4. Nanoparticle-mediated nonclassical crystal growth of sodium fluorosilicate nanowires and nanoplates

    Hongxia Li

    2011-12-01

    Full Text Available We observed nonclassical crystal growth of the sodium fluorosilicate nanowires, nanoplates, and hierarchical structures through self-assembly and aggregation of primary intermediate nanoparticles. Unlike traditional ion-by-ion crystallization, the primary nanoparticles formed first and their subsequent self-assembly, fusion, and crystallization generated various final crystals. These findings offer direct evidences for the aggregation-based crystallization mechanism.

  5. Epitaxy of advanced nanowire quantum devices

    Gazibegovic, Sasa; Car, Diana; Zhang, Hao; Balk, Stijn C.; Logan, John A.; de Moor, Michiel W. A.; Cassidy, Maja C.; Schmits, Rudi; Xu, Di; Wang, Guanzhong; Krogstrup, Peter; Op Het Veld, Roy L. M.; Zuo, Kun; Vos, Yoram; Shen, Jie; Bouman, Daniël; Shojaei, Borzoyeh; Pennachio, Daniel; Lee, Joon Sue; van Veldhoven, Petrus J.; Koelling, Sebastian; Verheijen, Marcel A.; Kouwenhoven, Leo P.; Palmstrøm, Chris J.; Bakkers, Erik P. A. M.

    2017-08-01

    Semiconductor nanowires are ideal for realizing various low-dimensional quantum devices. In particular, topological phases of matter hosting non-Abelian quasiparticles (such as anyons) can emerge when a semiconductor nanowire with strong spin-orbit coupling is brought into contact with a superconductor. To exploit the potential of non-Abelian anyons—which are key elements of topological quantum computing—fully, they need to be exchanged in a well-controlled braiding operation. Essential hardware for braiding is a network of crystalline nanowires coupled to superconducting islands. Here we demonstrate a technique for generic bottom-up synthesis of complex quantum devices with a special focus on nanowire networks with a predefined number of superconducting islands. Structural analysis confirms the high crystalline quality of the nanowire junctions, as well as an epitaxial superconductor-semiconductor interface. Quantum transport measurements of nanowire ‘hashtags’ reveal Aharonov-Bohm and weak-antilocalization effects, indicating a phase-coherent system with strong spin-orbit coupling. In addition, a proximity-induced hard superconducting gap (with vanishing sub-gap conductance) is demonstrated in these hybrid superconductor-semiconductor nanowires, highlighting the successful materials development necessary for a first braiding experiment. Our approach opens up new avenues for the realization of epitaxial three-dimensional quantum architectures which have the potential to become key components of various quantum devices.

  6. Platinum boride nanowires: Synthesis and characterization

    Ding Zhanhui; Qiu Lixia; Zhang Jian; Yao Bin; Cui Tian; Guan Weiming; Zheng Weitao; Wang Wenquan; Zhao Xudong; Liu Xiaoyang

    2012-01-01

    Highlights: ► Platinum boride nanowires have been synthesized via the direct current arc discharge method. ► XRD, TEM and SAED indicate that the nanowires are single-crystal PtB. ► Two broad photoluminescence emission peaks at about 586 nm and 626 nm have been observed in the PL spectroscopy of PtB nanowires. - Abstract: Platinum boride (PtB) nanowires have been successfully fabricated with direct current arc discharge method using a milled mixture of platinum (Pt) and boron nitride (BN) powders. X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to characterize the compositions, morphology, and structures of the samples. The results show that PtB nanowires are 30–50 nm thick and 20–30 μm long. TEM and selected area electron diffraction (SAED) patterns identify that the PtB nanowires are single-crystalline in nature. A growth mechanism based on vapor–liquid–solid (VLS) process is proposed for the formation of nanowires.

  7. Bending and tensile deformation of metallic nanowires

    McDowell, Matthew T; Leach, Austin M; Gall, Ken

    2008-01-01

    Using molecular statics simulations and the embedded atom method, a technique for bending silver nanowires and calculating Young's modulus via continuum mechanics has been developed. The measured Young's modulus values extracted from bending simulations were compared with modulus values calculated from uniaxial tension simulations for a range of nanowire sizes, orientations and geometries. Depending on axial orientation, the nanowires exhibit stiffening or softening under tension and bending as size decreases. Bending simulations typically result in a greater variation of Young's modulus values with nanowire size compared with tensile deformation, which indicates a loading-method-dependent size effect on elastic properties at sub-5 nm wire diameters. Since the axial stress is maximized at the lateral surfaces in bending, the loading-method-dependent size effect is postulated to be primarily a result of differences in nanowire surface and core elastic modulus. The divergence of Young's modulus from the bulk modulus in these simulations occurs at sizes below the range in which experiments have demonstrated a size scale effect on elastic properties of metallic nanowires. This difference indicates that other factors beyond native metallic surface properties play a role in experimentally observed nanowire elastic modulus size effects

  8. Mechanical behavior enhancement of ZnO nanowire by embedding different nanowires

    Vazinishayan, Ali; Yang, Shuming; Lambada, Dasaradha Rao; Wang, Yiming

    2018-06-01

    In this work, we employed commercial finite element modeling (FEM) software package ABAQUS to analyze mechanical properties of ZnO nanowire before and after embedding with different kinds of nanowires, having different materials and cross-section models such as Au (circular), Ag (pentagonal) and Si (rectangular) using three point bending technique. The length and diameter of the ZnO nanowire were measured to be 12,280 nm and 103.2 nm, respectively. In addition, Au, Ag and Si nanowires were considered to have the length of 12,280 nm and the diameter of 27 nm. It was found that after embedding Si nanowire with rectangular cross-section into the ZnO nanowire, the distribution of Von Misses stresses criterion, displacement and strain were decreased than the other nanowires embedded. The highest stiffness, the elastic deformation and the high strength against brittle failure have been made by Si nanowire comparison to the Au and Ag nanowires, respectively.

  9. Synthesis of Oxidation-Resistant Cupronickel Nanowires for Transparent Conducting Nanowire Networks

    Rathmall, Aaron [Duke University; Nguyen, Minh [Duke University; Wiley, Benjamin J [Duke University

    2012-01-01

    Nanowires of copper can be coated from liquids to create flexible, transparent conducting films that can potentially replace the dominant transparent conductor, indium tin oxide, in displays, solar cells, organic light-emitting diodes, and electrochromic windows. One issue with these nanowire films is that copper is prone to oxidation. It was hypothesized that the resistance to oxidation could be improved by coating copper nanowires with nickel. This work demonstrates a method for synthesizing copper nanowires with nickel shells as well as the properties of cupronickel nanowires in transparent conducting films. Time- and temperature-dependent sheet resistance measurements indicate that the sheet resistance of copper and silver nanowire films will double after 3 and 36 months at room temperature, respectively. In contrast, the sheet resistance of cupronickel nanowires containing 20 mol % nickel will double in about 400 years. Coating copper nanowires to a ratio of 2:1 Cu:Ni gave them a neutral gray color, making them more suitable for use in displays and electrochromic windows. These properties, and the fact that copper and nickel are 1000 times more abundant than indium or silver, make cupronickel nanowires a promising alternative for the sustainable, efficient production of transparent conductors.

  10. TiO2 nanowire-templated hierarchical nanowire network as water-repelling coating

    Hang, Tian; Chen, Hui-Jiuan; Xiao, Shuai; Yang, Chengduan; Chen, Meiwan; Tao, Jun; Shieh, Han-ping; Yang, Bo-ru; Liu, Chuan; Xie, Xi

    2017-12-01

    Extraordinary water-repelling properties of superhydrophobic surfaces make them novel candidates for a great variety of potential applications. A general approach to achieve superhydrophobicity requires low-energy coating on the surface and roughness on nano- and micrometre scale. However, typical construction of superhydrophobic surfaces with micro-nano structure through top-down fabrication is restricted by sophisticated fabrication techniques and limited choices of substrate materials. Micro-nanoscale topographies templated by conventional microparticles through surface coating may produce large variations in roughness and uncontrollable defects, resulting in poorly controlled surface morphology and wettability. In this work, micro-nanoscale hierarchical nanowire network was fabricated to construct self-cleaning coating using one-dimensional TiO2 nanowires as microscale templates. Hierarchical structure with homogeneous morphology was achieved by branching ZnO nanowires on the TiO2 nanowire backbones through hydrothermal reaction. The hierarchical nanowire network displayed homogeneous micro/nano-topography, in contrast to hierarchical structure templated by traditional microparticles. This hierarchical nanowire network film exhibited high repellency to both water and cell culture medium after functionalization with fluorinated organic molecules. The hierarchical structure templated by TiO2 nanowire coating significantly increased the surface superhydrophobicity compared to vertical ZnO nanowires with nanotopography alone. Our results demonstrated a promising strategy of using nanowires as microscale templates for the rational design of hierarchical coatings with desired superhydrophobicity that can also be applied to various substrate materials.

  11. Fabrication of nanowires and nanostructures

    Mátéfi-Tempfli, Stefan; Mátéfi-Tempfli, M.; Piraux, L.

    2009-01-01

    We report on different approaches that we have adopted and developed for the fabrication of nanowires and nanostructures. Methods based on template synthesis and on self organization seem to be the most promising for the fabrication of nanomaterials and nanostructures due to their easiness and low...... cost. The development of a supported nanoporous alumina template and the possibility of using this template to combine electrochemical synthesis with lithographic methods open new ways for the fabrication of complex nanostructures. The numerous advantages of the supported template and its compatibility...

  12. Semiconductor Nanowires: What's Next?

    Yang, Peidong; Yan, Ruoxue; Fardy, Melissa

    2010-04-28

    In this perspective, we take a critical look at the research progress within the nanowire community for the past decade. We discuss issues on the discovery of fundamentally new phenomena versus performance benchmarking for many of the nanowire applications. We also notice that both the bottom-up and top-down approaches have played important roles in advancing our fundamental understanding of this new class of nanostructures. Finally we attempt to look into the future and offer our personal opinions on what the future trends will be in nanowire research.

  13. Rare earth silicide nanowires on silicon surfaces

    Wanke, Martina

    2008-01-01

    The growth, structure and electronic properties of rare earth silicide nanowires are investigated on planar and vicinal Si(001) und Si(111) surfaces with scanning tunneling microscopy (STM), low energy electron diffraction (LEED) and angle-resolved photoelectron spectroscopy (ARPES). On all surfaces investigated within this work hexagonal disilicides are grown epitaxially with a lattice mismatch of -2.55% up to +0.83% along the hexagonal a-axis. Along the hexagonal c-axis the lattice mismatch is essentially larger with 6.5%. On the Si(001)2 x 1 surface two types of nanowires are grown epitaxially. The socalled broad wires show a one-dimensional metallic valence band structure with states crossing the Fermi level. Along the nanowires two strongly dispersing states at the anti J point and a strongly dispersing state at the anti Γ point can be observed. Along the thin nanowires dispersing states could not be observed. Merely in the direction perpendicular to the wires an intensity variation could be observed, which corresponds to the observed spacial structure of the thin nanowires. The electronic properties of the broad erbium silicide nanowires are very similar to the broad dysprosium silicide nanowires. The electronic properties of the DySi 2 -monolayer and the Dy 3 Si 5 -multilayer on the Si(111) surface are investigated in comparison to the known ErSi 2 /Si(111) and Er 3 Si 5 /Si(111) system. The positions and the energetic locations of the observed band in the surface Brillouin zone will be confirmed for dysprosium. The shape of the electron pockets in the vector k parallel space is elliptical at the anti M points, while the hole pocket at the anti Γ point is showing a hexagonal symmetry. On the Si(557) surface the structural and electronic properties depend strongly on the different preparation conditions likewise, in particular on the rare earth coverage. At submonolayer coverage the thin nanowires grow in wide areas of the sample surface, which are oriented

  14. Perspectives of single cast nanowires technology

    Ioisher, Anatolii; Badinter, Efim; Postolache, Vitalie; Leporda, Nicolae; Tiginyanu, Ion; Monaico, Eduard

    2011-01-01

    The paper is dedicated to production potential of glass-coated cast nanowire with metal-, semimetal- and semiconductor-based cores by means of Taylor-Ulitovsky method. Criteria of melted core-formative material penetration into a drawing capillary were analyzed. Theoretical preconditions of the reduction of cast microwire diameter up to nano-dimensions of core are reviewed and an improved method of cast nanowire manufacturing is proposed. Correctness of conclusions was experimentally proved and laboratory samples of micro- and nano-wires with core diameter of about 200-300 nanometers were produced, even in case of materials with poor adhesion.

  15. Silicon nanowire-based solar cells

    Stelzner, Th; Pietsch, M; Andrae, G; Falk, F; Ose, E; Christiansen, S [Institute of Photonic Technology, Albert-Einstein-Strasse 9, D-07745 Jena (Germany)], E-mail: thomas.stelzner@ipht-jena.de

    2008-07-23

    The fabrication of silicon nanowire-based solar cells on silicon wafers and on multicrystalline silicon thin films on glass is described. The nanowires show a strong broadband optical absorption, which makes them an interesting candidate to serve as an absorber in solar cells. The operation of a solar cell is demonstrated with n-doped nanowires grown on a p-doped silicon wafer. From a partially illuminated area of 0.6 cm{sup 2} open-circuit voltages in the range of 230-280 mV and a short-circuit current density of 2 mA cm{sup -2} were obtained.

  16. Silicon nanowire-based solar cells

    Stelzner, Th; Pietsch, M; Andrae, G; Falk, F; Ose, E; Christiansen, S

    2008-01-01

    The fabrication of silicon nanowire-based solar cells on silicon wafers and on multicrystalline silicon thin films on glass is described. The nanowires show a strong broadband optical absorption, which makes them an interesting candidate to serve as an absorber in solar cells. The operation of a solar cell is demonstrated with n-doped nanowires grown on a p-doped silicon wafer. From a partially illuminated area of 0.6 cm 2 open-circuit voltages in the range of 230-280 mV and a short-circuit current density of 2 mA cm -2 were obtained

  17. Electrospinning synthesis of superconducting BSCCO nanowires

    Duarte, Edgar A.; Quintero, Pedro A.; Meisel, Mark W.; Nino, Juan C.

    2013-01-01

    Highlights: •Bi 2 Sr 2 CaCu 2 O 8+x nanowires 150 nm to 250 nm thick are synthesized using the electrospinning. •Bi 2 Sr 2 CaCu 2 O 8+x nanowires are obtained after a heat treatment at 850 °C. •Bi 2 Sr 2 CaCu 2 O 8+x nanowires show a T c = 78.7 K consistent with bulk superconductor behavior. -- Abstract: This paper presents the synthesis and characterization of Bi 2 Sr 2 CaCu 2 O 8+x superconducting nanowires. Bi 2 Sr 2 CaCu 2 O 8+x nanowires with a T c = 78.7 K are synthesized using the electrospinning process employing sol–gel precursors. A sol–gel methodology is used to obtain a homogeneous PVP solution containing Bi, Sr, Ca, and Cu acetates. Mats of randomly oriented nanowires and aligned nanowires are also collected. After a heat treatment at 850 °C in ambient atmosphere using heating rates of 100 and 400 °C/h, fully crystallized Bi 2 Sr 2 CaCu 2 O 8+x nanowires are obtained. The morphology, microstructure, and crystal structure of these nanowires are then examined to reveal a rectangular morphology having typical wire thickness in the range of 150–250 nm, and a wire width between 400 and 600 nm. DC magnetization studies are conducted to investigate the critical transition temperature (T c ) of Bi 2 Sr 2 CaCu 2 O 8+x nanowires and to compare their magnetic properties to those of bulk Bi 2 Sr 2 CaCu 2 O 8+x powder. The T c for the commercial powder is observed at 78.6 K, and that of the obtained nanowires at 78.7 K. These results point to the superconducting nature of Bi 2 Sr 2 CaCu 2 O 8+x nanowires, and the potential of the electrospinning process for the synthesis of this superconductor material

  18. Biofunctionalization of zinc oxide nanowires for DNA sensory applications

    Rudolph Bettina

    2011-01-01

    Full Text Available Abstract We report on the biofunctionalization of zinc oxide nanowires for the attachment of DNA target molecules on the nanowire surface. With the organosilane glycidyloxypropyltrimethoxysilane acting as a bifunctional linker, amino-modified capture molecule oligonucleotides have been immobilized on the nanowire surface. The dye-marked DNA molecules were detected via fluorescence microscopy, and our results reveal a successful attachment of DNA capture molecules onto the nanowire surface. The electrical field effect induced by the negatively charged attached DNA molecules should be able to control the electrical properties of the nanowires and gives way to a ZnO nanowire-based biosensing device.

  19. Dielectrophoretic alignment of metal and metal oxide nanowires and nanotubes: a universal set of parameters for bridging prepatterned microelectrodes.

    Maijenburg, A W; Maas, M G; Rodijk, E J B; Ahmed, W; Kooij, E S; Carlen, E T; Blank, D H A; ten Elshof, J E

    2011-03-15

    Nanowires and nanotubes were synthesized from metals and metal oxides using templated cathodic electrodeposition. With templated electrodeposition, small structures are electrodeposited using a template that is the inverse of the final desired shape. Dielectrophoresis was used for the alignment of the as-formed nanowires and nanotubes between prepatterned electrodes. For reproducible nanowire alignment, a universal set of dielectrophoresis parameters to align any arbitrary nanowire material was determined. The parameters include peak-to-peak potential and frequency, thickness of the silicon oxide layer, grounding of the silicon substrate, and nature of the solvent medium used. It involves applying a field with a frequency >10(5) Hz, an insulating silicon oxide layer with a thickness of 2.5 μm or more, grounding of the underlying silicon substrate, and the use of a solvent medium with a low dielectric constant. In our experiments, we obtained good results by using a peak-to-peak potential of 2.1 V at a frequency of 1.2 × 10(5) Hz. Furthermore, an indirect alignment technique is proposed that prevents short circuiting of nanowires after contacting both electrodes. After alignment, a considerably lower resistivity was found for ZnO nanowires made by templated electrodeposition (2.2-3.4 × 10(-3) Ωm) compared to ZnO nanorods synthesized by electrodeposition (10 Ωm) or molecular beam epitaxy (MBE) (500 Ωm). Copyright © 2010 Elsevier Inc. All rights reserved.

  20. Crystal phase-based epitaxial growth of hybrid noble metal nanostructures on 4H/fcc Au nanowires

    Lu, Qipeng; Wang, An-Liang; Gong, Yue; Hao, Wei; Cheng, Hongfei; Chen, Junze; Li, Bing; Yang, Nailiang; Niu, Wenxin; Wang, Jie; Yu, Yifu; Zhang, Xiao; Chen, Ye; Fan, Zhanxi; Wu, Xue-Jun; Chen, Jinping; Luo, Jun; Li, Shuzhou; Gu, Lin; Zhang, Hua

    2018-03-01

    Crystal-phase engineering offers opportunities for the rational design and synthesis of noble metal nanomaterials with unusual crystal phases that normally do not exist in bulk materials. However, it remains a challenge to use these materials as seeds to construct heterometallic nanostructures with desired crystal phases and morphologies for promising applications such as catalysis. Here, we report a strategy for the synthesis of binary and ternary hybrid noble metal nanostructures. Our synthesized crystal-phase heterostructured 4H/fcc Au nanowires enable the epitaxial growth of Ru nanorods on the 4H phase and fcc-twin boundary in Au nanowires, resulting in hybrid Au-Ru nanowires. Moreover, the method can be extended to the epitaxial growth of Rh, Ru-Rh and Ru-Pt nanorods on the 4H/fcc Au nanowires to form unique hybrid nanowires. Importantly, the Au-Ru hybrid nanowires with tunable compositions exhibit excellent electrocatalytic performance towards the hydrogen evolution reaction in alkaline media.

  1. Self-bridging of vertical silicon nanowires and a universal capacitive force model for spontaneous attraction in nanostructures.

    Sun, Zhelin; Wang, Deli; Xiang, Jie

    2014-11-25

    Spontaneous attractions between free-standing nanostructures have often caused adhesion or stiction that affects a wide range of nanoscale devices, particularly nano/microelectromechanical systems. Previous understandings of the attraction mechanisms have included capillary force, van der Waals/Casimir forces, and surface polar charges. However, none of these mechanisms universally applies to simple semiconductor structures such as silicon nanowire arrays that often exhibit bunching or adhesions. Here we propose a simple capacitive force model to quantitatively study the universal spontaneous attraction that often causes stiction among semiconductor or metallic nanostructures such as vertical nanowire arrays with inevitably nonuniform size variations due to fabrication. When nanostructures are uniform in size, they share the same substrate potential. The presence of slight size differences will break the symmetry in the capacitive network formed between the nanowires, substrate, and their environment, giving rise to electrostatic attraction forces due to the relative potential difference between neighboring wires. Our model is experimentally verified using arrays of vertical silicon nanowire pairs with varied spacing, diameter, and size differences. Threshold nanowire spacing, diameter, or size difference between the nearest neighbors has been identified beyond which the nanowires start to exhibit spontaneous attraction that leads to bridging when electrostatic forces overcome elastic restoration forces. This work illustrates a universal understanding of spontaneous attraction that will impact the design, fabrication, and reliable operation of nanoscale devices and systems.

  2. Properties of Fe{sub 8−N}Co{sub N} nanoribbons and nanowires: A DFT approach

    Muñoz, Francisco [Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle (Germany); Departamento de Física, Facultad de Ciencias, Universidad de Chile, Casilla 653, Santiago 7800024 (Chile); Centro para el Desarrollo de la Nanociencia y la Nanotecnología, CEDENNA, Avda. Ecuador 3493, Santiago 9170124 (Chile); Altbir, D. [Centro para el Desarrollo de la Nanociencia y la Nanotecnología, CEDENNA, Avda. Ecuador 3493, Santiago 9170124 (Chile); Departamento de Física, Universidad de Santiago (Chile); Kiwi, Miguel, E-mail: m.kiwi.t@gmail.com [Departamento de Física, Facultad de Ciencias, Universidad de Chile, Casilla 653, Santiago 7800024 (Chile); Centro para el Desarrollo de la Nanociencia y la Nanotecnología, CEDENNA, Avda. Ecuador 3493, Santiago 9170124 (Chile); Morán-López, J.L. [Departamento de Física, Laboratorio Interdisciplinario, Facultad de Ciencias, Universidad Nacional Autónoma de México, México, D.F. (Mexico)

    2013-08-15

    The structural configurations and magnetic properties of zig-zag nanoribbons and nanowires of Fe{sub 8−N}Co{sub N}, for 0≤N≤8, are calculated within the density functional theory. Both, for the zig-zag nanoribbons and the nanowires, there is a tendency towards forming Fe–Co bonds, while segregation of the Fe and Co is energetically unfavorable. For the nanowire structures a transition from bcc Fe to hcp Co spatial arrangements is observed when N is increased from 4 to 6, in spite of the small size of the systems under investigation. The energy minimization was performed taking into consideration the electronic and magnetic structures, since for each crystalline structure, chemical composition, and short range order, particular magnetic properties of these systems do correspond. The magnetocrystalline anisotropy energy is calculated, and it is found that the easy axis changes from a transverse direction in Fe-rich systems, to the axial direction as the Co concentration increases. It is also found that although there are important variations of the local magnetic moment of the components, and their particular location in the system, the average magnetic moment is an almost linear function of N. - Highlights: ► Properties of Fe{sub 8−N}Co{sub N} nanoribbons and nanowires are calculated ab initio. ► Structural and magnetic properties of nanoribbons and nanowires are calculated. ► Shape and crystalline anisotropies of nanoribbons and nanowires are contrasted.

  3. High-Performance Supercapacitors from Niobium Nanowire Yarns.

    Mirvakili, Seyed M; Mirvakili, Mehr Negar; Englezos, Peter; Madden, John D W; Hunter, Ian W

    2015-07-01

    The large-ion-accessible surface area of carbon nanotubes (CNTs) and graphene sheets formed as yarns, forests, and films enables miniature high-performance supercapacitors with power densities exceeding those of electrolytics while achieving energy densities equaling those of batteries. Capacitance and energy density can be enhanced by depositing highly pseudocapacitive materials such as conductive polymers on them. Yarns formed from carbon nanotubes are proposed for use in wearable supercapacitors. In this work, we show that high power, energy density, and capacitance in yarn form are not unique to carbon materials, and we introduce niobium nanowires as an alternative. These yarns show higher capacitance and energy per volume and are stronger and 100 times more conductive than similarly spun carbon multiwalled nanotube (MWNT) and graphene yarns. The long niobium nanowires, formed by repeated extrusion and drawing, achieve device volumetric peak power and energy densities of 55 MW·m(-3) (55 W·cm(-3)) and 25 MJ·m(-3) (7 mWh·cm(-3)), 2 and 5 times higher than that for state-of-the-art CNT yarns, respectively. The capacitance per volume of Nb nanowire yarn is lower than the 158 MF·m(-3) (158 F·cm(-3)) reported for carbon-based materials such as reduced graphene oxide (RGO) and CNT wet-spun yarns, but the peak power and energy densities are 200 and 2 times higher, respectively. Achieving high power in long yarns is made possible by the high conductivity of the metal, and achievement of high energy density is possible thanks to the high internal surface area. No additional metal backing is needed, unlike for CNT yarns and supercapacitors in general, saving substantial space. As the yarn is infiltrated with pseudocapacitive materials such as poly(3,4-ethylenedioxythiophene) (PEDOT), the energy density is further increased to 10 MJ·m(-3) (2.8 mWh·cm(-3)). Similar to CNT yarns, niobium nanowire yarns are highly flexible and show potential for weaving into textiles

  4. Cathodoluminescence from beta-Ga_2O_3 nanowires

    Nogales Díaz, Emilio; Méndez Martín, Bianchi; Piqueras de Noriega, Javier

    2005-01-01

    ß-Ga_2O_3 nano- and microwires with diameters ranging from tens of nanometers to about one micron and lengths of up to tens of microns, have been obtained by sintering Ga_2O_3 powder under argon flow. The structures have been investigated by cathodoluminescence in the scanning electron microscope. The samples showed the violet-blue emission characteristic of Ga_2O_3 and a red emission at 1.73 eV dominant in the nanowires and other nano- and microstructures formed during the sintering treatmen...

  5. Structural and electrochemical study of the reaction of lithium with silicon nanowires

    Chan, Candace K.

    2009-04-01

    The structural transformations of silicon nanowires when cycled against lithium were evaluated using electrochemical potential spectroscopy and galvanostatic cycling. During the charge, the nanowires alloy with lithium to form an amorphous LixSi compound. At potentials <50 mV, a structural transformation occurs. In studies on micron-sized particles previously reported in the literature, this transformation is a crystallization to a metastable Li15Si4 phase. X-ray diffraction measurements on the Si nanowires, however, show that they are amorphous, suggesting that a different amorphous phase (LiySi) is formed. Lithium is removed from this phase in the discharge to form amorphous silicon. We have found that limiting the voltage in the charge to 70 mV results in improved efficiency and cyclability compared to charging to 10 mV. This improvement is due to the suppression of the transformation at low potentials, which alloys for reversible cycling of amorphous silicon nanowires. © 2008 Elsevier B.V. All rights reserved.

  6. Silicon nanowire hot carrier electroluminescence

    Plessis, M. du, E-mail: monuko@up.ac.za; Joubert, T.-H.

    2016-08-31

    Avalanche electroluminescence from silicon pn junctions has been known for many years. However, the internal quantum efficiencies of these devices are quite low due to the indirect band gap nature of the semiconductor material. In this study we have used reach-through biasing and SOI (silicon-on-insulator) thin film structures to improve the internal power efficiency and the external light extraction efficiency. Both continuous silicon thin film pn junctions and parallel nanowire pn junctions were manufactured using a custom SOI technology. The pn junctions are operated in the reach-through mode of operation, thus increasing the average electric field within the fully depleted region. Experimental results of the emission spectrum indicate that the most dominant photon generating mechanism is due to intraband hot carrier relaxation processes. It was found that the SOI nanowire light source external power efficiency is at least an order of magnitude better than the comparable bulk CMOS (Complementary Metal Oxide Semiconductor) light source. - Highlights: • We investigate effect of electric field on silicon avalanche electroluminescence. • With reach-through pn junctions the current and carrier densities are kept constant. • Higher electric fields increase short wavelength radiation. • Higher electric fields decrease long wavelength radiation. • The effect of the electric field indicates intraband transitions as main mechanism.

  7. Debye–Einstein approximation approach to calculate the lattice specific heat and related parameters for a Si nanowire

    A. KH. Alassafee

    2017-11-01

    Full Text Available The modified Debye–Einstein approximation model is used to calculate nanoscale size-dependent values of Gruneisen parameters and lattice specific heat capacity for Si nanowires. All parameters forming the model, including Debye temperatures, bulk moduli, the lattice thermal expansion and the lattice volume, are calculated according to their nanoscale size dependence. Values for lattice volume Gruneisen parameters increase with the decrease of the nanowires’ diameter, while all other parameters decrease. The nanosize dependence of lattice thermal parameters agree with other reported theoretical results. Keywords: Lattice specific heat capacity, Gruneisen parameter, Debye–Einstein model, Si nanowires

  8. Quantification of nanowire uptake by live cells

    Margineanu, Michael B.

    2015-01-01

    attempts have been made at tagging and investigating their interaction with living cells. In this study, magnetic iron nanowires with an iron oxide layer are coated with (3-Aminopropyl)triethoxysilane (APTES), and subsequently labeled with a fluorogenic p

  9. Micromagnetic simulations of cylindrical magnetic nanowires

    Ivanov, Yurii P.; Chubykalo-Fesenko, O.

    2015-01-01

    This chapter reviews micromagnetic simulations of cylindrical magnetic nanowires and their ordered arrays. It starts with a description of the theoretical background of micromagnetism. The chapter discusses main magnetization reversal modes, domain

  10. Optical properties of nanowire metamaterials with gain

    Isidio de Lima, Joaquim Junior; Adam, Jost; Rego, Davi

    2016-01-01

    The transmittance, reflectance and absorption of a nanowire metamaterial with optical gain are numerically simulated and investigated. It is assumed that the metamaterial is represented by aligned silver nanowires embedded into a semiconductor matrix, made of either silicon or gallium phosphide....... The gain in the matrix is modeled by adding a negative imaginary part to the dielectric function of the semiconductor. It is found that the optical coefficients of the metamaterial depend on the gain magnitude in a non-trivial way: they can both increase and decrease with gain depending on the lattice...... constant of the metamaterial. This peculiar behavior is explained by the field redistribution between the lossy metal nanowires and the amplifying matrix material. These findings are significant for a proper design of nanowire metamaterials with low optical losses for diverse applications....

  11. Electrical conductivity measurements of bacterial nanowires from Pseudomonas aeruginosa

    Maruthupandy, Muthusamy; Anand, Muthusamy; Beevi, Akbar Sait Hameedha; Priya, Radhakrishnan Jeeva; Maduraiveeran, Govindhan

    2015-01-01

    The extracellular appendages of bacteria (flagella) that transfer electrons to electrodes are called bacterial nanowires. This study focuses on the isolation and separation of nanowires that are attached via Pseudomonas aeruginosa bacterial culture. The size and roughness of separated nanowires were measured using transmission electron microscopy (TEM) and atomic force microscopy (AFM), respectively. The obtained bacterial nanowires indicated a clear image of bacterial nanowires measuring 16 nm in diameter. The formation of bacterial nanowires was confirmed by microscopic studies (AFM and TEM) and the conductivity nature of bacterial nanowire was investigated by electrochemical techniques. Cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS), which are nondestructive voltammetry techniques, suggest that bacterial nanowires could be the source of electrons—which may be used in various applications, for example, microbial fuel cells, biosensors, organic solar cells, and bioelectronic devices. Routine analysis of electron transfer between bacterial nanowires and the electrode was performed, providing insight into the extracellular electron transfer (EET) to the electrode. CV revealed the catalytic electron transferability of bacterial nanowires and electrodes and showed excellent redox activities. CV and EIS studies showed that bacterial nanowires can charge the surface by producing and storing sufficient electrons, behave as a capacitor, and have features consistent with EET. Finally, electrochemical studies confirmed the development of bacterial nanowires with EET. This study suggests that bacterial nanowires can be used to fabricate biomolecular sensors and nanoelectronic devices. (paper)

  12. Exclusive Rights and State Aid

    Ølykke, Grith Skovgaard

    2017-01-01

    Exclusive rights are granted in order to regulate markets as one of several possible tools of public intervention. The article considers the role of State aid law in the regulation of exclusive rights. Whereas the right of Member States to organise markets as monopolies and the choice of provider...... are regulated by free movement rules and Article 106 TFEU, State aid law regulates the terms of the right to ensure that the beneficiary is not granted an economic advantage. Exclusive rights may be granted on various terms: for a payment, in combination with compensation or as compensation. The two former...... kinds of terms are regulated under State aid law which requires market terms. The granting of exclusive rights as compensation is analysed on the basis of the Eventech judgment, and it is found that when no financial transaction is included in the grant, it resembles a decision to organise a market...

  13. Exclusive processes at Jefferson Lab

    There is no clear guidance from theory as to the limits of the transition region; .... behavior in exclusive photoreactions with hadrons in the final state at large t may provide .... The planned medium acceptance detector (MAD) system in Hall A.

  14. Central Exclusive Production at LHCb

    INSPIRE-00106463

    2015-01-01

    Central Exclusive Production is a unique QCD process in which particles are produced via colourless propagators. Several results have been obtained at LHCb for the production of single charmonia, pairs of charmonia, and single bottomonia.

  15. Central Exclusive Production at LHCb

    AUTHOR|(INSPIRE)INSPIRE-00392425

    2017-01-01

    The LHCb detector, with its excellent momentum resolution and flexible trigger strategy, is ideally suited for measuring particles produced exclusively. In addition, a new system of forward shower counters has been installed upstream and downstream of the detector, and has been used to facilitate studies of Central Exclusive Production. Such measurements of integrated and differential cross-section in both Run 1 and Run 2 of the LHC, are summarised here.

  16. Exclusive Territories and Manufacturers’ Collusion

    Salvatore Piccolo; Markus Reisinger

    2010-01-01

    This paper highlights the rationale for exclusive territories in a model of repeated interaction between competing supply chains. We show that with observable contracts exclusive territories have two countervailing effects on manufacturers' incentives to sustain tacit collusion. First, granting local monopolies to retailers distributing a given brand softens inter- and intrabrand competition in a one-shot game. Hence, punishment profits are larger, thereby rendering deviation more profitable....

  17. Exclusion statistics and integrable models

    Mashkevich, S.

    1998-01-01

    The definition of exclusion statistics, as given by Haldane, allows for a statistical interaction between distinguishable particles (multi-species statistics). The thermodynamic quantities for such statistics ca be evaluated exactly. The explicit expressions for the cluster coefficients are presented. Furthermore, single-species exclusion statistics is realized in one-dimensional integrable models. The interesting questions of generalizing this correspondence onto the higher-dimensional and the multi-species cases remain essentially open

  18. Silver Nanowire Arrays : Fabrication and Applications

    Feng, Yuyi

    2016-01-01

    Nanowire arrays have increasingly received attention for their use in a variety of applications such as surface-enhanced Raman scattering (SERS), plasmonic sensing, and electrodes for photoelectric devices. However, until now, large scale fabrication of device-suitable metallic nanowire arrays on supporting substrates has seen very limited success. This thesis describes my work rst on the development of a novel successful processing route for the fabrication of uniform noble metallic (e.g. A...

  19. Optical Properties of Rotationally Twinned Nanowire Superlattices

    Bao, Jiming; Bell, David C.; Capasso, Federico

    2008-01-01

    We have developed a technique so that both transmission electron microscopy and microphotoluminescence can be performed on the same semiconductor nanowire over a large range of optical power, thus allowing us to directly correlate structural and optical properties of rotationally twinned zinc...... a heterostructure in a chemically homogeneous nanowire material and alter in a major way its optical properties opens new possibilities for band-structure engineering....

  20. Plasmonic Waveguide-Integrated Nanowire Laser

    Bermudez-Urena, Esteban; Tutuncuoglu, Gozde; Cuerda, Javier

    2017-01-01

    technologies. Despite significant advances in their fundamental aspects, the integration within scalable photonic circuitry remains challenging. Here we report on the realization of hybrid photonic devices consisting of nanowire lasers integrated with wafer-scale lithographically designed V-groove plasmonic......Next-generation optoelectronic devices and photonic circuitry will have to incorporate on-chip compatible nanolaser sources. Semiconductor nanowire lasers have emerged as strong candidates for integrated systems with applications ranging from ultrasensitive sensing to data communication...

  1. Indium antimonide nanowires arrays for promising thermoelectric converters

    Gorokh G. G.

    2015-02-01

    Full Text Available The authors have theoretically substantiated the possibility to create promising thermoelectric converters based on quantum wires. The calculations have shown that the use of quantum wires with lateral dimensions smaller than quantum confinement values and high concentration and mobility of electrons, can lead to a substantial cooling of one of the contacts up to tens of degrees and to the heating of the other. The technological methods of manufacturing of indium antimonide nanowires arrays with high aspect ratio of the nanowire diameters to their length in the modified nanoporous anodic alumina matrixes were developed and tested. The microstructure and composition of the formed nanostructures were investigated. The electron microscopy allowed establishing that within each pore nanowires are formed with diameters of 35 nm and a length of 35 microns (equal to the matrix thickness. The electron probe x-ray microanalysis has shown that the atomic ratio of indium and antimony in the semiconductor nanostructures amounted to 38,26% and 61,74%, respectively. The current-voltage measurement between the upper and lower contacts of Cu/InSb/Cu structure (1 mm2 has shown that at 2.82 V negative voltage at the emitter contact, current density is 129,8 A/cм2, and the collector contact is heated up to 75 degrees during 150 sec. Thus, the experimental results confirmed the theoretical findings that the quantum wire systems can be used to create thermoelectric devices, which can be widely applied in electronics, in particular, for cooling integrated circuits (processors, thermal controlling of the electrical circuits by changing voltage value.

  2. Growth and characterization of bismuth telluride nanowires

    Picht, Oliver

    2010-05-26

    Polycrystalline Bi{sub 2}Te{sub 3} nanowires are electrochemically grown in ion track-etched polycarbonate membranes. Potentiostatic growth is demonstrated in templates of various thicknesses ranging from 10 to 100 {mu}m. The smallest observed nanowire diameters are 20 nm in thin membranes and approx. 140-180 nm in thicker membranes. The influence of the various deposition parameters on the nanowire growth rate is presented. Slower growth rates are attained by selective change of deposition potentials and lower temperatures. Nanowires synthesized at slower growth rates have shown to possess a higher degree of crystalline order and smoother surface contours. With respect to structural properties, X-ray diffraction and transmission electron microscopy verified the growth of Bi{sub 2}Te{sub 3} and evidenced the stability of specific properties, e.g. grain size or preferential orientation, with regard to variations in the deposition conditions. The interdependency of the fabrication parameters, i.e. temperature, deposition potential and nanochannel diameters, is demonstrated for wires grown in 30 {mu}m thick membranes. It is visible from diffraction analysis that texture is tunable by the growth conditions but depends also on the size of the nanochannels in the template. Both (015) and (110) reflexes are observed for the nanowire arrays. Energy dispersive X-ray analysis further points out that variation of nanochannel size could lead to a change in elemental composition of the nanowires. (orig.)

  3. Constricted nanowire with stabilized magnetic domain wall

    Sbiaa, R.; Al Bahri, M.

    2016-01-01

    Domain wall (DW)-based magnetic memory offers the possibility for increasing the storage capacity. However, stability of DW remains the major drawback of this scheme. In this letter, we propose a stepped nanowire for pinning DW in a desirable position. From micromagnetic simulation, the proposed design applied to in-plane magnetic anisotropy materials shows that by adjusting the nanowire step size and its width it is possible to stabilize DW for a desirable current density range. In contrast, only a movement of DW could be seen for conventional nanowire. An extension to a multi-stepped nanowire could be used for multi-bit per cell magnetic memory. - Highlights: • A stepped nanowire is proposed to pin domain wall in desired position. • The new structure can be made by a simple off set of two single nanowires. • The critical current for moving domain wall from one state to the other could be tuned by adjusting the geometry of the device. • The device could be used for multi-bit per cell memory by extending the steps in the device.

  4. Additional compound semiconductor nanowires for photonics

    Ishikawa, F.

    2016-02-01

    GaAs related compound semiconductor heterostructures are one of the most developed materials for photonics. Those have realized various photonic devices with high efficiency, e. g., lasers, electro-optical modulators, and solar cells. To extend the functions of the materials system, diluted nitride and bismide has been paid attention over the past decade. They can largely decrease the band gap of the alloys, providing the greater tunability of band gap and strain status, eventually suppressing the non-radiative Auger recombinations. On the other hand, selective oxidation for AlGaAs is a vital technique for vertical surface emitting lasers. That enables precisely controlled oxides in the system, enabling the optical and electrical confinement, heat transfer, and mechanical robustness. We introduce the above functions into GaAs nanowires. GaAs/GaAsN core-shell nanowires showed clear redshift of the emitting wavelength toward infrared regime. Further, the introduction of N elongated the carrier lifetime at room temperature indicating the passivation of non-radiative surface recombinations. GaAs/GaAsBi nanowire shows the redshift with metamorphic surface morphology. Selective and whole oxidations of GaAs/AlGaAs core-shell nanowires produce semiconductor/oxide composite GaAs/AlGaOx and oxide GaOx/AlGaOx core-shell nanowires, respectively. Possibly sourced from nano-particle species, the oxide shell shows white luminescence. Those property should extend the functions of the nanowires for their application to photonics.

  5. Growth and characterization of bismuth telluride nanowires

    Picht, Oliver

    2010-01-01

    Polycrystalline Bi 2 Te 3 nanowires are electrochemically grown in ion track-etched polycarbonate membranes. Potentiostatic growth is demonstrated in templates of various thicknesses ranging from 10 to 100 μm. The smallest observed nanowire diameters are 20 nm in thin membranes and approx. 140-180 nm in thicker membranes. The influence of the various deposition parameters on the nanowire growth rate is presented. Slower growth rates are attained by selective change of deposition potentials and lower temperatures. Nanowires synthesized at slower growth rates have shown to possess a higher degree of crystalline order and smoother surface contours. With respect to structural properties, X-ray diffraction and transmission electron microscopy verified the growth of Bi 2 Te 3 and evidenced the stability of specific properties, e.g. grain size or preferential orientation, with regard to variations in the deposition conditions. The interdependency of the fabrication parameters, i.e. temperature, deposition potential and nanochannel diameters, is demonstrated for wires grown in 30 μm thick membranes. It is visible from diffraction analysis that texture is tunable by the growth conditions but depends also on the size of the nanochannels in the template. Both (015) and (110) reflexes are observed for the nanowire arrays. Energy dispersive X-ray analysis further points out that variation of nanochannel size could lead to a change in elemental composition of the nanowires. (orig.)

  6. Reversal modes in asymmetric Ni nanowires

    Leighton, B.; Pereira, A. [Departamento de Fisica, Universidad de Santiago de Chile (USACH), Avda. Ecuador 3493, 917-0124 Santiago (Chile); Escrig, J., E-mail: jescrigm@gmail.com [Departamento de Fisica, Universidad de Santiago de Chile (USACH), Avda. Ecuador 3493, 917-0124 Santiago (Chile); Center for the Development of Nanoscience and Nanotechnology (CEDENNA), Avda. Ecuador 3493, 917-0124 Santiago (Chile)

    2012-11-15

    We have investigated the evolution of the magnetization reversal mechanism in asymmetric Ni nanowires as a function of their geometry. Circular nanowires are found to reverse their magnetization by the propagation of a vortex domain wall, while in very asymmetric nanowires the reversal is driven by the propagation of a transverse domain wall. The effect of shape asymmetry of the wire on coercivity and remanence is also studied. Angular dependence of the remanence and coercivity is also addressed. Tailoring the magnetization reversal mechanism in asymmetric nanowires can be useful for magnetic logic and race-track memory, both of which are based on the displacement of magnetic domain walls. Finally, an alternative method to detect the presence of magnetic drops is proposed. - Highlights: Black-Right-Pointing-Pointer Asymmetry strongly modifies the magnetic behavior of a wire. Black-Right-Pointing-Pointer Very asymmetric nanowires reverse their magnetization by a transverse domain wall. Black-Right-Pointing-Pointer An alternative method to detect the presence of magnetic drops is proposed. Black-Right-Pointing-Pointer Tailoring the reversal mode in asymmetric nanowires can be useful for potential applications.

  7. Optical haze of randomly arranged silver nanowire transparent conductive films with wide range of nanowire diameters

    M. Marus

    2018-03-01

    Full Text Available The effect of the diameter of randomly arranged silver nanowires on the optical haze of silver nanowire transparent conductive films was studied. Proposed simulation model behaved similarly with the experimental results, and was used to theoretically study the optical haze of silver nanowires with diameters in the broad range from 30 nm and above. Our results show that a thickening of silver nanowires from 30 to 100 nm results in the increase of the optical haze up to 8 times, while from 100 to 500 nm the optical haze increases only up to 1.38. Moreover, silver nanowires with diameter of 500 nm possess up to 5% lower optical haze and 5% higher transmittance than 100 nm thick silver nanowires for the same 10-100 Ohm/sq sheet resistance range. Further thickening of AgNWs can match the low haze of 30 nm thick AgNWs, but at higher transmittance. The results obtained from this work allow deeper analysis of the silver nanowire transparent conductive films from the perspective of the diameter of nanowires for various optoelectronic devices.

  8. Mechanical transfer of ZnO nanowires for a flexible and conformal piezotronic strain sensor

    Jenkins, Kory; Yang, Rusen

    2017-07-01

    We demonstrate a truly conformal and flexible piezotronic strain sensor using zinc oxide (ZnO) nanowires. Well-aligned, vertical ZnO nanowires are grown by chemical vapor deposition on a silicon wafer with a hydrothermally grown ZnO seed layer. The nanowires are infiltrated with polydimethylsiloxane and mechanically transferred from the silicon substrate. Plasma etching exposes the top surface of the nanowires before deposition of a gold (Au) top electrode. The bottom electrode is formed by silver paint which also adheres the sensor to the measured structure. To demonstrate the sensor’s ability to conform to complex surfaces, a stepped shaft with a shoulder fillet is used. The sensor is attached to the shoulder fillet of the stepped shaft, conforming to both the circumference of the shaft, and the radius of the fillet. A periodic bending displacement is applied to the end of the shaft. The strain induces a piezoelectric potential in the ZnO nanowires which controls the barrier height and conductivity at the gold/ZnO interface, by what is known as the piezotronic effect. The conductivity change is measured for periodically applied strains. The nonlinear current-voltage (I-V) response of the device is due to the Schottky contact between the ZnO nanowires and gold electrode. The geometry of the stepped shaft corresponds to a known stress concentration factor, and the strain experienced by the shaft is estimated with a COMSOL FEA study. The conformal nature of the strain sensor makes it suitable for structural monitoring applications involving complex geometries and stress concentrators.

  9. Electrodeposition of ZnO nano-wires lattices with a controlled morphology

    Elias, J.; Tena-Zaera, R.; Katty, A.; Levy-Clement, C.

    2006-01-01

    In this work, it is shown that the electrodeposition is a changeable low cost method which allows, according to the synthesis conditions, to obtain not only plane thin layers of ZnO but different nano-structures too. In a first part, are presented the formation conditions of a compact thin layer of nanocrystalline ZnO electrodeposited on a conducing glass substrate. This layer plays a buffer layer role for the deposition of a lattice of ZnO nano-wires. The step of nano-wires nucleation is not only determined by the electrochemical parameters but by the properties of the buffer layer too as the grain sizes and its thickness. In this context, the use of an electrodeposition method in two steps allows to control the nano-wires length and diameter and their density. The morphology and the structural and optical properties of these nano-structures have been analyzed by different techniques as the scanning and transmission electron microscopy, the X-ray diffraction and the optical spectroscopy. These studies show that ZnO nano-structures are formed of monocrystalline ZnO nano-wires, presenting a great developed surface and a great optical transparency in the visible. These properties make ZnO a good material for the development of nano-structured photovoltaic cells as the extremely thin absorber cells (PV ETA) or those with dye (DSSC) which are generally prepared with porous polycrystalline TiO 2 . Its replacement by a lattice of monocrystalline ZnO nano-wires allows to reduce considerably the number of grain boundaries and in consequence to improve the transport of the electrons. The results are then promising for the PV ETA cells with ZnO nano-wires. (O.M.)

  10. Electrodeposition of textured Bi27Sb28Te45 nanowires with enhanced electrical conductivity

    Hasan, Maksudul; Gautam, Devendraprakash; Enright, Ryan

    2016-01-01

    This work presents the template based pulsed potential electrodeposition technique of highly textured single crystalline bismuth antimony telluride (Bi 1-x Sb x ) 2 Te 3 nanowires from a single aqueous electrolyte. Cyclic voltammetry was used as an electroanalytical tool to assess the effect of the precursor concentrations on the composition of the deposits and to determine the deposition potential for each element. Pulsed potential electrodeposition was then applied on a gold-coated anodised alumina template to examine the effect of the pulse parameters on the composition and texture of Bi 27 Sb 28 Te 45 nanowires. The nanowires are cylindrical in shape formed during the deposition inside the porous template and highly textured as they are decorated with sparse distribution of small crystal domains. The electrical conductivity (24.1 × 10 4  S m −1 ) of a single nanowire was measured using a four-point probe technique implemented on a custom fabricated test chip. In this work, we demonstrated that crystal orientation with respect to the transport direction controlled by tuning the pulsed electrodeposition parameters. This allowed us to realise electrical conductivities ∼2.5 times larger than Sb doped bismuth-tellurium based ternary material systems and similar to what is typically seen in binary systems. - Highlights: • Pulsed electrodeposition is described towards fabrication of (Bi 1-x Sb x ) 2 Te 3 nanowires. • The adopted method is compatible with existing CMOS process. • The nanowires were fabricated as highly textured to enhance phonon scattering. • The electrical conductivity is ∼2.5 times larger than the current ternary materials.

  11. Deformable Organic Nanowire Field-Effect Transistors.

    Lee, Yeongjun; Oh, Jin Young; Kim, Taeho Roy; Gu, Xiaodan; Kim, Yeongin; Wang, Ging-Ji Nathan; Wu, Hung-Chin; Pfattner, Raphael; To, John W F; Katsumata, Toru; Son, Donghee; Kang, Jiheong; Matthews, James R; Niu, Weijun; He, Mingqian; Sinclair, Robert; Cui, Yi; Tok, Jeffery B-H; Lee, Tae-Woo; Bao, Zhenan

    2018-02-01

    Deformable electronic devices that are impervious to mechanical influence when mounted on surfaces of dynamically changing soft matters have great potential for next-generation implantable bioelectronic devices. Here, deformable field-effect transistors (FETs) composed of single organic nanowires (NWs) as the semiconductor are presented. The NWs are composed of fused thiophene diketopyrrolopyrrole based polymer semiconductor and high-molecular-weight polyethylene oxide as both the molecular binder and deformability enhancer. The obtained transistors show high field-effect mobility >8 cm 2 V -1 s -1 with poly(vinylidenefluoride-co-trifluoroethylene) polymer dielectric and can easily be deformed by applied strains (both 100% tensile and compressive strains). The electrical reliability and mechanical durability of the NWs can be significantly enhanced by forming serpentine-like structures of the NWs. Remarkably, the fully deformable NW FETs withstand 3D volume changes (>1700% and reverting back to original state) of a rubber balloon with constant current output, on the surface of which it is attached. The deformable transistors can robustly operate without noticeable degradation on a mechanically dynamic soft matter surface, e.g., a pulsating balloon (pulse rate: 40 min -1 (0.67 Hz) and 40% volume expansion) that mimics a beating heart, which underscores its potential for future biomedical applications. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Resistance Fluctuations in GaAs Nanowire Grids

    Ivan Marasović

    2014-01-01

    Full Text Available We present a numerical study on resistance fluctuations in a series of nanowire-based grids. Each grid is made of GaAs nanowires arranged in parallel with metallic contacts crossing all nanowires perpendicularly. Electrical properties of GaAs nanowires known from previous experimental research are used as input parameters in the simulation procedure. Due to the nonhomogeneous doping, the resistivity changes along nanowire. Allowing two possible nanowire orientations (“upwards” or “downwards”, the resulting grid is partially disordered in vertical direction which causes resistance fluctuations. The system is modeled using a two-dimensional random resistor network. Transfer-matrix computation algorithm is used to calculate the total network resistance. It is found that probability density function (PDF of resistance fluctuations for a series of nanowire grids changes from Gaussian behavior towards the Bramwell-Holdsworth-Pinton distribution when both nanowire orientations are equally represented in the grid.

  13. Ambient template synthesis of multiferroic MnWO4 nanowires and nanowire arrays

    Zhou Hongjun; Yiu Yuen; Aronson, M.C.; Wong, Stanislaus S.

    2008-01-01

    The current report describes the systematic synthesis of polycrystalline, multiferroic MnWO 4 nanowires and nanowire arrays with controllable chemical composition and morphology, using a modified template-directed methodology under ambient room-temperature conditions. We were able to synthesize nanowires measuring 55±10, 100±20, and 260±40 nm in diameter, respectively, with lengths ranging in the microns. Extensive characterization of as-prepared samples has been performed using X-ray diffraction, scanning electron microscopy, transmission electron microscopy (TEM), high-resolution TEM, and energy-dispersive X-ray spectroscopy. Magnetic behavior in these systems was also probed. - Graphical abstract: Systematic synthesis of crystalline, multiferroic MnWO4 nanowires and nanowire arrays with controllable chemical composition and morphology, using a modified template-directed methodology under ambient room-temperature conditions

  14. Field-emission property of self-purification SiC/SiOx coaxial nanowires synthesized via direct microwave irradiation using iron-containing catalyst

    Zhou, Qing; Yu, Yongzhi; Huang, Shan; Meng, Jiang; Wang, Jigang

    2017-07-01

    SiC/SiOx coaxial nanowires were rapidly synthesized via direct microwave irradiation in low vacuum atmosphere. During the preparation process, only graphite, silicon, silicon dioxide powders were used as raw materials and iron-containing substance was employed as catalyst. Comprehensive characterizations were employed to investigate the microstructure of the products. The results showed that a great quantity of coaxial nanowires with uniform sizes and high aspect ratio had been successfully achieved. The coaxial nanowires consist of a silicon oxide (SiOx) shell and a β-phase silicon carbide (β-SiC) core that exhibited in special tube brush like. In additional, nearly all the products were achieved in the statement of pure SiC/SiOx coaxial nanowires without the existence of metallic catalyst, indicating that the self-removal of iron (Fe) catalyst should be occurred during the synthesis process. Photoluminescence (PL) spectral analysis result indicated that such novel SiC/SiOx coaxial nanowires exhibited significant blue-shift. Besides, the measurement results of field-emission (FE) demonstrated that the SiC/SiOx coaxial nanowires had ultralow turn-on field and threshold field with values of 0.2 and 2.1 V/μm, respectively. The hetero-junction structure formed between SiOx shell and SiC core, lots of emission sites, as well as clear tips of the nanowires were applied to explain the excellent FE properties.[Figure not available: see fulltext.

  15. Alloy formation during InAs nanowire growth on GaAs(111)

    Davydok, Anton; Saqib, Muhammad; Biermanns, Andreas; Pietsch, Ullrich [Festkoerperphysik, Universitaet Siegen (Germany); Rieger, Torsten; Grap, Thomas; Lepsa, Mihail [Peter Gruenberg Institut 9, Forschungszentrum Juelich (Germany); JARA - Fundamentals of Future Information Technology (Germany)

    2012-07-01

    The growth of semiconductor nanowires has attracted significant interest in recent years due to the possible fabrication of novel semiconductor devices for future electronic and opto-electronic applications. A possible way to obtain nanowires is the growth in molecular beam epitaxy on the (111)B oriented surface of the desired substrate, covered by a thin oxide layer. A crucial parameter in this method is the initial thickness of the oxide layer, often determined by an etching procedure. In this contribution, we report on the structural investigation of InAs nanowires grown on GaAs substrates covered by different oxide-layers using X-ray diffraction. In this contribution, we report on the structural investigation of InAs nanowires grown via an In droplet on GaAs substrates covered by different oxide layers using X-ray diffraction. Using a combination of symmetric and asymmetric X-ray diffraction, we observe that for growth on a defective oxide layer, alloy formation takes place and a large amount of InGaAs is formed, whereas for growth on an initially smooth oxide layer, only pure InAs is formed.

  16. Magnetization pinning in modulated nanowires: from topological protection to the "corkscrew" mechanism.

    Fernandez-Roldan, Jose Angel; Perez Del Real, Rafael; Bran, Cristina; Vazquez, Manuel; Chubykalo-Fesenko, Oksana

    2018-03-29

    Diameter-modulated nanowires offer an important paradigm to design the magnetization response of 3D magnetic nanostructures by engineering the domain wall pinning. With the aim to understand its nature and to control the process, we analyze the magnetization response in FeCo periodically modulated polycrystalline nanowires varying the minor segment diameter. Our modelling indicates a very complex behavior with a strong dependence on the disorder distribution and an important role of topologically non-trivial magnetization structures. We demonstrate that modulated nanowires with a small diameter difference are characterized by an increased coercive field in comparison to the straight ones, which is explained by a formation of topologically protected walls formed by two 3D skyrmions with opposite chiralities. For a large diameter difference we report the occurrence of a novel pinning type called here the "corkscrew": the magnetization of the large diameter segment forms a skyrmion tube with a core position in a helical modulation along the nanowire. This structure is pinned at the constriction and in order to penetrate the narrow segments the vortex/skyrmion core size should be reduced.

  17. Magnetic properties in (Mn,Fe)-codoped ZnO nanowire

    Cao, Huawei; Lu, Pengfei; Cong, Zixiang; Yu, Zhongyuan; Cai, Ningning; Zhang, Xianlong; Gao, Tao; Wang, Shumin

    2013-01-01

    Using the first-principles density functional theory, we have studied the electronic structures and magnetic properties of Mn/Fe codoped ZnO nanowires systematically. The calculated results of formation energy indicate that the configuration of the lowest energy where Mn and Fe atoms form nearest neighbors on the outer cylindrical surface layer along the [0001] direction, will be determined. The magnetic coupling of 8 types of Mn/Fe codoped ZnO nanowires was investigated and ferromagnetic state was found in certain configurations. The mechanism is from the fierce hybridization between 3d of Mn and Fe with O 2p near the Fermi level. The relative energy difference for configuration VIII is 0.221 eV, which indicates that room temperature ferromagnetism could be obtained in such a system and Mn/Fe codoped ZnO nanowires are a promising nanoscale spintronic material. - Highlights: • The stable structure prefers that Mn/Fe form nearest neighbors on the outer surface. • The fierce p–d hybridization is responsible for ferromagnetic (FM) coupling. • Mn/Fe codoped ZnO nanowire is a promising FM semiconductor material

  18. Magnetic properties in (Mn,Fe)-codoped ZnO nanowire

    Cao, Huawei [Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), Ministry of Education, Beijing 100876 (China); Lu, Pengfei, E-mail: photon.bupt@gmail.com [Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), Ministry of Education, Beijing 100876 (China); Cong, Zixiang [School of Information and Communication Engineering, Beijing University of Posts and Telecommunications, Beijing 100976 (China); Yu, Zhongyuan; Cai, Ningning; Zhang, Xianlong [Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), Ministry of Education, Beijing 100876 (China); Gao, Tao [Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065 (China); Wang, Shumin [Photonics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Gothenburg (Sweden); State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

    2013-12-02

    Using the first-principles density functional theory, we have studied the electronic structures and magnetic properties of Mn/Fe codoped ZnO nanowires systematically. The calculated results of formation energy indicate that the configuration of the lowest energy where Mn and Fe atoms form nearest neighbors on the outer cylindrical surface layer along the [0001] direction, will be determined. The magnetic coupling of 8 types of Mn/Fe codoped ZnO nanowires was investigated and ferromagnetic state was found in certain configurations. The mechanism is from the fierce hybridization between 3d of Mn and Fe with O 2p near the Fermi level. The relative energy difference for configuration VIII is 0.221 eV, which indicates that room temperature ferromagnetism could be obtained in such a system and Mn/Fe codoped ZnO nanowires are a promising nanoscale spintronic material. - Highlights: • The stable structure prefers that Mn/Fe form nearest neighbors on the outer surface. • The fierce p–d hybridization is responsible for ferromagnetic (FM) coupling. • Mn/Fe codoped ZnO nanowire is a promising FM semiconductor material.

  19. Long-range magnetostatic interactions in arrays of nanowires

    Raposo, V; González, J M; Vázquez, M

    2000-01-01

    Experimental measurements and micromagnetic simulations of the hysteresis loops of arrays of cobalt nanowires are compared here. Arrays of cobalt nanowires (200 nm in diameter) were electrodeposited into the pores of alumina membranes (thickness 60 mu m). Their hysteresis loops along the axial direction of nanowires were measured using vibrating sample magnetometry. Micromagnetic simulations were performed considering dipolar interaction between nanowires leading to similar hysteresis loops as those obtained experimentally.

  20. A superconducting nanowire can be modeled by using SPICE

    Berggren, Karl K.; Zhao, Qing-Yuan; Abebe, Nathnael; Chen, Minjie; Ravindran, Prasana; McCaughan, Adam; Bardin, Joseph C.

    2018-05-01

    Modeling of superconducting nanowire single-photon detectors typically requires custom simulations or finite-element analysis in one or two dimensions. Here, we demonstrate two simplified one-dimensional SPICE models of a superconducting nanowire that can quickly and efficiently describe the electrical characteristics of a superconducting nanowire. These models may be of particular use in understanding alternative architectures for nanowire detectors and readouts.

  1. Synthesis and characterization of Au incorporated Alq3 nanowires

    Khan, Mohammad Bilal; Ahmad, Sultan; Parwaz, M.; Rahul, Khan, Zishan H.

    2018-05-01

    We report the synthesis and characterization of pure and Au incorporated Alq3 nanowires. These nanowires are synthesized using thermal vapor transport method. The luminescence intensity of Au incorporated Alq3 nanowires are recorded to be higher than that of pure Alq3 nanowires, which is found to increase with the increase in Au concentration. Fluorescence quenching is also observed when Au concentration is increased beyond the certain limit.

  2. Sharing Powers Within Exclusive Competences: Rethinking EU Antitrust Law Enforcement

    Van Cleynenbreugel, Pieter

    2016-01-01

    Although the establishment of competition rules forms part of the EU’s exclusive competences, the application and enforcement of those rules has always been shared consistently between the EU and its Member States.The sharing of enforcement powers is conceptualised traditionally as a delegation of the exercise of exclusively conferred competences. The Court of Justice of the European Union’s case law in the context of EU antitrust law enforcement nevertheless raises profound questions as to t...

  3. In situ doping of catalyst-free InAs nanowires with Si: Growth, polytypism, and local vibrational modes of Si

    Dimakis, Emmanouil; Ramsteiner, Manfred; Huang, Chang-Ning; Trampert, Achim; Riechert, Henning; Geelhaar, Lutz [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Davydok, Anton; Biermanns, Andreas; Pietsch, Ullrich [Festkörperphysik, Universität Siegen, Walter-Flex-Str. 3, 57072 Siegen (Germany)

    2013-09-30

    Growth and structural aspects of the in situ doping of InAs nanowires with Si have been investigated. The nanowires were grown catalyst-free on Si(111) substrates by molecular beam epitaxy. The supply of Si influenced the growth kinetics, affecting the nanowire dimensions, but not the degree of structural polytypism, which was always pronounced. As determined by Raman spectroscopy, Si was incorporated as substitutional impurity exclusively on In sites, which makes it a donor. Previously unknown Si-related Raman peaks at 355 and 360 cm{sup −1} were identified, based on their symmetry properties in polarization-dependent measurements, as the two local vibrational modes of an isolated Si impurity on In site along and perpendicular, respectively, to the c-axis of the wurtzite InAs crystal.

  4. Understanding InP Nanowire Array Solar Cell Performance by Nanoprobe-Enabled Single Nanowire Measurements.

    Otnes, Gaute; Barrigón, Enrique; Sundvall, Christian; Svensson, K Erik; Heurlin, Magnus; Siefer, Gerald; Samuelson, Lars; Åberg, Ingvar; Borgström, Magnus T

    2018-05-09

    III-V solar cells in the nanowire geometry might hold significant synthesis-cost and device-design advantages as compared to thin films and have shown impressive performance improvements in recent years. To continue this development there is a need for characterization techniques giving quick and reliable feedback for growth development. Further, characterization techniques which can improve understanding of the link between nanowire growth conditions, subsequent processing, and solar cell performance are desired. Here, we present the use of a nanoprobe system inside a scanning electron microscope to efficiently contact single nanowires and characterize them in terms of key parameters for solar cell performance. Specifically, we study single as-grown InP nanowires and use electron beam induced current characterization to understand the charge carrier collection properties, and dark current-voltage characteristics to understand the diode recombination characteristics. By correlating the single nanowire measurements to performance of fully processed nanowire array solar cells, we identify how the performance limiting parameters are related to growth and/or processing conditions. We use this understanding to achieve a more than 7-fold improvement in efficiency of our InP nanowire solar cells, grown from a different seed particle pattern than previously reported from our group. The best cell shows a certified efficiency of 15.0%; the highest reported value for a bottom-up synthesized InP nanowire solar cell. We believe the presented approach have significant potential to speed-up the development of nanowire solar cells, as well as other nanowire-based electronic/optoelectronic devices.

  5. Nanowires: properties, applications and synthesis via porous anodic ...

    Moreover, periodic arrays of magnetic nanowires hold high potential for recording media application. Nanowires are also potential candidates for sensor and bio-medical applications. In the present article, the physical and chemical properties of nanowires along with their probable applications in different fields have been ...

  6. Failure mechanisms and electromechanical coupling in semiconducting nanowires

    Peng B.

    2010-06-01

    Full Text Available One dimensional nanostructures, like nanowires and nanotubes, are increasingly being researched for the development of next generation devices like logic gates, transistors, and solar cells. In particular, semiconducting nanowires with a nonsymmetric wurtzitic crystal structure, such as zinc oxide (ZnO and gallium nitride (GaN, have drawn immense research interests due to their electromechanical coupling. The designing of the future nanowire-based devices requires component-level characterization of individual nanowires. In this paper, we present a unique experimental set-up to characterize the mechanical and electromechanical behaviour of individual nanowires. Using this set-up and complementary atomistic simulations, mechanical properties of ZnO nanowires and electromechanical properties of GaN nanowires were investigated. In ZnO nanowires, elastic modulus was found to depend on nanowire diameter decreasing from 190 GPa to 140 GPa as the wire diameter increased from 5 nm to 80 nm. Inconsistent failure mechanisms were observed in ZnO nanowires. Experiments revealed a brittle fracture, whereas simulations using a pairwise potential predicted a phase transformation prior to failure. This inconsistency is addressed in detail from an experimental as well as computational perspective. Lastly, in addition to mechanical properties, preliminary results on the electromechanical properties of gallium nitride nanowires are also reported. Initial investigations reveal that the piezoresistive and piezoelectric behaviour of nanowires is different from bulk gallium nitride.

  7. Controlled growth of single nanowires within a supported alumina template

    Vlad, A.; Mátéfi-Tempfli, M.; Faniel, S.

    2006-01-01

    A simple technique for fabricating single nanowires with well-defined position is presented. The process implies the use of a silicon nitride mask for selective electrochemical growth of the nanowires in a porous alumina template. We show that this method allows the realization of complex nanowire...

  8. Robust Visual Tracking via Exclusive Context Modeling

    Zhang, Tianzhu

    2015-02-09

    In this paper, we formulate particle filter-based object tracking as an exclusive sparse learning problem that exploits contextual information. To achieve this goal, we propose the context-aware exclusive sparse tracker (CEST) to model particle appearances as linear combinations of dictionary templates that are updated dynamically. Learning the representation of each particle is formulated as an exclusive sparse representation problem, where the overall dictionary is composed of multiple {group} dictionaries that can contain contextual information. With context, CEST is less prone to tracker drift. Interestingly, we show that the popular L₁ tracker [1] is a special case of our CEST formulation. The proposed learning problem is efficiently solved using an accelerated proximal gradient method that yields a sequence of closed form updates. To make the tracker much faster, we reduce the number of learning problems to be solved by using the dual problem to quickly and systematically rank and prune particles in each frame. We test our CEST tracker on challenging benchmark sequences that involve heavy occlusion, drastic illumination changes, and large pose variations. Experimental results show that CEST consistently outperforms state-of-the-art trackers.

  9. Women in Chernobyl Exclusion Zone

    Balashevska, Y.; Kireev, S.; Navalikhin, V.

    2015-01-01

    Today, 29 years after the Chernobyl accident, the Exclusion Zone still remains an areal unsealed radiation source of around 2600 km"2. It is not just a gigantic radioactive waste storage facility (the amount of radioactive waste accumulated within the Zone, except for the Shelter, is estimated at about 2.8 million m"3), but also a unique research and engineering platform for biologists, radiologists, chemists and physicists. Taking into account the amount of the radionuclides released during the accident, it becomes quite understood that the radiological environment in the Exclusion Zone is far from favorable. However, among the Exclusion Zone personnel who numbers 5000, there are female workers. The poster represents the results of the research performed among the female employees of the largest enterprise of the Exclusion Zone, “Chornobyl Spetskombinat”. The survey was performed with the view to knowing what makes women work in the most radioactively contaminated area in Europe, and what their role is, to revealing their fears and hopes, and to estimating the chances of the brave women of Chernobyl Exclusion Zone to succeed in their careers. (author)

  10. Semiconductor Nanowires and Nanotubes for Energy Conversion

    Fardy, Melissa Anne

    In recent years semiconductor nanowires and nanotubes have garnered increased attention for their unique properties. With their nanoscale dimensions comes high surface area and quantum confinement, promising enhancements in a wide range of applications. 1-dimensional nanostructures are especially attractive for energy conversion applications where photons, phonons, and electrons come into play. Since the bohr exciton radius and phonon and electron mean free paths are on the same length scales as nanowire diameters, optical, thermal, and electrical properties can be tuned by simple nanowire size adjustments. In addition, the high surface area inherent to nanowires and nanotubes lends them towards efficient charge separation and superior catalytic performance. In thermoelectric power generation, the nanoscale wire diameter can effectively scatter phonons, promoting reductions in thermal conductivity and enhancements in the thermoelectric figure of merit. To that end, single-crystalline arrays of PbS, PbSe, and PbTe nanowires have been synthesized by a chemical vapor transport approach. The electrical and thermal transport properties of the nanowires were characterized to investigate their potential as thermoelectric materials. Compared to bulk, the lead chalcogenide nanowires exhibit reduced thermal conductivity below 100 K by up to 3 orders of magnitude, suggesting that they may be promising thermoelectric materials. Smaller diameters and increased surface roughness are expected to give additional enhancements. The solution-phase synthesis of PbSe nanowires via oriented attachment of nanoparticles enables facile surface engineering and diameter control. Branched PbSe nanowires synthesized by this approach showed near degenerately doped charge carrier concentrations. Compared to the bulk, the PbSe nanowires exhibited a similar Seebeck coefficient and a significant reduction in thermal conductivity in the temperature range 20 K to 300 K. Thermal annealing of the Pb

  11. Quantification of nanowire uptake by live cells

    Margineanu, Michael B.

    2015-05-01

    Nanostructures fabricated by different methods have become increasingly important for various applications at the cellular level. In order to understand how these nanostructures “behave” and for studying their internalization kinetics, several attempts have been made at tagging and investigating their interaction with living cells. In this study, magnetic iron nanowires with an iron oxide layer are coated with (3-Aminopropyl)triethoxysilane (APTES), and subsequently labeled with a fluorogenic pH-dependent dye pHrodo™ Red, covalently bound to the aminosilane surface. Time-lapse live imaging of human colon carcinoma HCT 116 cells interacting with the labeled iron nanowires is performed for 24 hours. As the pHrodo™ Red conjugated nanowires are non-fluorescent outside the cells but fluoresce brightly inside, internalized nanowires are distinguished from non-internalized ones and their behavior inside the cells can be tracked for the respective time length. A machine learning-based computational framework dedicated to automatic analysis of live cell imaging data, Cell Cognition, is adapted and used to classify cells with internalized and non-internalized nanowires and subsequently determine the uptake percentage by cells at different time points. An uptake of 85 % by HCT 116 cells is observed after 24 hours incubation at NW-to-cell ratios of 200. While the approach of using pHrodo™ Red for internalization studies is not novel in the literature, this study reports for the first time the utilization of a machine-learning based time-resolved automatic analysis pipeline for quantification of nanowire uptake by cells. This pipeline has also been used for comparison studies with nickel nanowires coated with APTES and labeled with pHrodo™ Red, and another cell line derived from the cervix carcinoma, HeLa. It has thus the potential to be used for studying the interaction of different types of nanostructures with potentially any live cell types.

  12. Exclusive nonleptonic B{yields}VV decays

    Barik, N [Department of Physics, Utkal University, Bhubaneswar-751004 (India); Naimuddin, Sk [Department of Physics, Maharishi College of Natural Law, Bhubaneswar-751007 (India); Dash, P C [Department of Physics, Prananath Autonomous College, Khurda-752057 (India); Kar, Susmita [Department of Physics, North Orissa University, Baripada-757003 (India)

    2009-07-01

    The exclusive two-body nonleptonic B{yields}VV decays are investigated, within the factorization approximation, in the relativistic independent quark model based on a confining potential in the scalar-vector harmonic form. The branching ratios and the longitudinal polarization fraction (R{sub L}) are calculated yielding the model predictions in agreement with experiment. Our predicted CP-odd fraction (R{sub perpendicular}) for B{yields}D*D{sub (s)}* decays are in general agreement with other model predictions and within the existing experimental limit.

  13. Problems of Chernobyl exclusion zone

    1996-01-01

    The collection comprises the results of researches and design activity in the ChNPP exclusion zone with the aim to develop technology, equipment and instruments for RAW management and accident clean-up, studying of the composition and structure of the activity solid bearers in the soil of the exclusion zone and transformation of the radionuclides in the nearest zone of ChNPP. Much attention is paid to medical and biological problems of the accident influence on the flora, fauna and people's health labour conditions and incidence of the people involved

  14. Problems of Chornobyl Exclusion Zone

    Kashparov, V.A.

    2009-01-01

    The collection comprises the results of researches and design activity in the ChNPP exclusion zone with the aim to develop technology, equipment and instruments for RAW management and accident clean-up, studying of the composition and structure of the activity solid bearers in the soil of the exclusion zone and transformation of the radionuclides in the nearest zone of ChNPP. Much attention is paid to medical and biological problems of the accident influence on the flora, fauna and people's health, labour conditions and incidence of the people involved.

  15. Exclusion statistics and integrable models

    Mashkevich, S.

    1998-01-01

    The definition of exclusion statistics that was given by Haldane admits a 'statistical interaction' between distinguishable particles (multispecies statistics). For such statistics, thermodynamic quantities can be evaluated exactly; explicit expressions are presented here for cluster coefficients. Furthermore, single-species exclusion statistics is realized in one-dimensional integrable models of the Calogero-Sutherland type. The interesting questions of generalizing this correspondence to the higher-dimensional and the multispecies cases remain essentially open; however, our results provide some hints as to searches for the models in question

  16. Nanowire Electrodes for Advanced Lithium Batteries

    Huang, Lei; Wei, Qiulong; Sun, Ruimin; Mai, Liqiang, E-mail: mlq518@whut.edu.cn [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, WUT-Harvard Joint Nano Key Laboratory, Wuhan University of Technology, Wuhan (China)

    2014-10-27

    Since the commercialization of lithium ion batteries (LIBs) in the past two decades, rechargeable LIBs have become widespread power sources for portable devices used in daily life. However, current demands require higher energy density and power density of batteries. The electrochemical energy storage performance of LIBs could be improved by applying nanomaterial electrodes, but their fast capacity fading is still one of the key limitations and the mechanism need to be clearly understood. Single nanowire electrode devices are considered as a versatile platform for in situ probing the direct relationship between electrical transport, structure change, and other properties of the single nanowire electrode along with the charge/discharge process. The results indicate that the conductivity decrease of the nanowire electrode and the structural disorder/destruction during electrochemical reaction limit the cycling performance of LIBs. Based on the in situ observations, some feasible optimization strategies, including prelithiation, coaxial structure, nanowire arrays, and hierarchical structure architecture, are proposed and utilized to restrain the conductivity decrease and structural disorder/destruction. Further, the applications of nanowire electrodes in some “beyond Li-ion” batteries, such as Li-S and Li-air batteries are also described.

  17. Preparation and characterization of electrodeposited cobalt nanowires

    Irshad, M. I., E-mail: imrancssp@gmail.com; Mohamed, N. M., E-mail: noranimuti-mohamed@petronas.com.my [Department of Fundamental and Applied Sciences, Universiti Teknologi PETRONAS, 31750 PERAK (Malaysia); Ahmad, F., E-mail: faizahmad@petronas.com.my; Abdullah, M. Z., E-mail: zaki-abdullah@petronas.com.my [Department of Mechanical Engineering, Universiti Teknologi PETRONAS, 31750 PERAK (Malaysia)

    2014-10-24

    Electrochemical deposition technique has been used to deposit cobalt nanowires into the nano sized channels of Anodized Aluminium Oxide (AAO) templates. CoCl{sub 2}Ðœ‡6H2O salt solution was used, which was buffered with H{sub 3}BO{sub 3} and acidified by dilute H{sub 2}SO{sub 4} to increase the plating life and control pH of the solution. Thin film of copper around 150 nm thick on one side of AAO template coated by e-beam evaporation system served as cathode to create electrical contact. FESEM analysis shows that the as-deposited nanowires are highly aligned, parallel to one another and have high aspect ratio with a reasonably high pore-filing factor. The TEM results show that electrodeposited cobalt nanowires are crystalline in nature. The Hysteresis loop shows the magnetization properties for in and out of plane configuration. The in plane saturation magnetization (Ms) is lower than out of plane configuration because of the easy axis of magnetization is perpendicular to nanowire axis. These magnetic nanowires could be utilized for applications such as spintronic devices, high density magnetic storage, and magnetic sensor applications.

  18. Preparation and characterization of electrodeposited cobalt nanowires

    Irshad, M. I.; Mohamed, N. M.; Ahmad, F.; Abdullah, M. Z.

    2014-01-01

    Electrochemical deposition technique has been used to deposit cobalt nanowires into the nano sized channels of Anodized Aluminium Oxide (AAO) templates. CoCl 2 Ðœ‡6H2O salt solution was used, which was buffered with H 3 BO 3 and acidified by dilute H 2 SO 4 to increase the plating life and control pH of the solution. Thin film of copper around 150 nm thick on one side of AAO template coated by e-beam evaporation system served as cathode to create electrical contact. FESEM analysis shows that the as-deposited nanowires are highly aligned, parallel to one another and have high aspect ratio with a reasonably high pore-filing factor. The TEM results show that electrodeposited cobalt nanowires are crystalline in nature. The Hysteresis loop shows the magnetization properties for in and out of plane configuration. The in plane saturation magnetization (Ms) is lower than out of plane configuration because of the easy axis of magnetization is perpendicular to nanowire axis. These magnetic nanowires could be utilized for applications such as spintronic devices, high density magnetic storage, and magnetic sensor applications

  19. Nanowire Electrodes for Advanced Lithium Batteries

    Lei eHuang

    2014-10-01

    Full Text Available Since the commercialization of lithium ion batteries (LIBs in the past two decades, rechargeable LIBs have become widespread power sources for portable devices used in daily life. However, current demands require higher energy density and power density of batteries. The electrochemical energy storage performance of LIBs could be improved by applying nanomaterial electrodes, but their fast capacity fading is still one of the key limitations and the mechanism needs to be clearly understood. Single nanowire electrode devices are considered as a versatile platform for in situ probing the direct relationship between electrical transport, structure change, and other properties of the single nanowire electrode along with the charge/discharge process. The results indicate the conductivity decrease of the nanowire electrode and the structural disorder/destruction during electrochemical reactions which limit the cycling performance of LIBs. Based on the in situ observations, some feasible structure architecture strategies, including prelithiation, coaxial structure, nanowire arrays and hierarchical structure architecture, are proposed and utilized to restrain the conductivity decrease and structural disorder/destruction. Further, the applications of nanowire electrodes in some beyond Li-ion batteries, such as Li-S and Li-air battery, are also described.

  20. Nanowire Electrodes for Advanced Lithium Batteries

    Huang, Lei; Wei, Qiulong; Sun, Ruimin; Mai, Liqiang

    2014-01-01

    Since the commercialization of lithium ion batteries (LIBs) in the past two decades, rechargeable LIBs have become widespread power sources for portable devices used in daily life. However, current demands require higher energy density and power density of batteries. The electrochemical energy storage performance of LIBs could be improved by applying nanomaterial electrodes, but their fast capacity fading is still one of the key limitations and the mechanism need to be clearly understood. Single nanowire electrode devices are considered as a versatile platform for in situ probing the direct relationship between electrical transport, structure change, and other properties of the single nanowire electrode along with the charge/discharge process. The results indicate that the conductivity decrease of the nanowire electrode and the structural disorder/destruction during electrochemical reaction limit the cycling performance of LIBs. Based on the in situ observations, some feasible optimization strategies, including prelithiation, coaxial structure, nanowire arrays, and hierarchical structure architecture, are proposed and utilized to restrain the conductivity decrease and structural disorder/destruction. Further, the applications of nanowire electrodes in some “beyond Li-ion” batteries, such as Li-S and Li-air batteries are also described.

  1. Growth and Characterisation of GaAs/AlGaAs Core-shell Nanowires for Optoelectronic Device Applications

    Jiang, Nian

    III-V semiconductor nanowires have been investigated as key components for future electronic and optoelectronic devices and systems due to their direct band gap and high electron mobility. Amongst the III-V semiconductors, the planar GaAs material system has been extensively studied and used in industries. Accordingly, GaAs nanowires are the prime candidates for nano-scale devices. However, the electronic performance of GaAs nanowires has yet to match that of state-of-the-art planar GaAs devices. The present deficiency of GaAs nanowires is typically attributed to the large surface-to- volume ratio and the tendency for non-radiative recombination centres to form at the surface. The favoured solution of this problem is by coating GaAs nanowires with AlGaAs shells, which replaces the GaAs surface with GaAs/AlGaAs interface. This thesis presents a systematic study of GaAs/AlGaAs core-shell nanowires grown by metal organic chemical vapour deposition (MOCVD), including understanding the growth, and characterisation of their structural and optical properties. The structures of the nanowires were mainly studied by scanning electron microscopy and transmis- sion electron microscopy (TEM). A procedure of microtomy was developed to prepare the cross-sectional samples for the TEM studies. The optical properties were charac- terised by photoluminescence (PL) spectroscopy. Carrier lifetimes were measured by time-resolved PL. The growth of AlGaAs shell was optimised to obtain the best optical properties, e.g. the strongest PL emission and the longest minority carrier lifetimes. (Abstract shortened by ProQuest.).

  2. Stigma and Exclusion in Cross-Cultural Contexts

    Annie Elizabeth Pohlman

    2014-08-01

    Full Text Available Discriminatory and marginalising discourses affect the cultural and social realities of people in all human societies. Across time and place, these discourses manifest in numerous tangible and intangible ways, creating stigma and forms of exclusion by means particular to their cultural, historical, political and social contexts. These discourses also manifest in varying degrees of harm; from verbal abuse and behavioural forms of exclusion, to physical abuse and neglect, and exclusionary practices at institutional, legal and regulatory levels. Such forms of stigma cause direct physical and mental harm and other forms of persecution. The papers in this special issue arise from a one-day symposium held at the University of Queensland in February 2013. The symposium, ‘Stigma and Exclusion in Cross-Cultural Contexts’, brought together researchers and community-based practitioners from across Australia and overseas to explore marginalization, discriminatory discourses and stigma in a wide range of historical and cross-cultural settings. By critically engaging with experiences of social, political and cultural exclusion and marginalisation in different contexts, we aimed to elucidate how discourses of stigma are created, contested and negotiated in cross-cultural settings. We also aimed to explore stigmatisation in its lived realities: as discourses of exclusion; as the fleshy reality of discrimination in social worlds; as part of the life narratives of individuals and groups; and as discourses of agency and counter-discourses in responding to stigma.

  3. Probability of conductive bond formation in a percolating network of nanowires with fusible tips

    Rykaczewski, Konrad; Wang, Robert Y.

    2018-03-01

    Meeting the heat dissipation demands of microelectronic devices requires development of polymeric composites with high thermal conductivity. This property is drastically improved by percolation networks of metallic filler particles that have their particle-to-particle contact resistances reduced through thermal or electromagnetic fusing. However, composites with fused metallic fillers are electrically conductive, which prevents their application within the chip-board and the inter-chip gaps. Here, we propose that electrically insulating composites for these purposes can be achieved by the application of fusible metallic coatings to the tips of nanowires with thermally conductive but electrically insulating cores. We derive analytical models that relate the ratio of the coated and total nanowire lengths to the fraction of fused, and thus conductive, bonds within percolating networks of these structures. We consider two types of materials for these fusible coatings. First, we consider silver-like coatings, which form only conductive bonds when contacting the silver-like coating of another nanowire. Second, we consider liquid metal-like coatings, which form conductive bonds regardless of whether they contact a coated or an uncoated segment of another nanowire. These models were validated using Monte Carlo simulations, which also revealed that electrical short-circuiting is highly unlikely until most of the wire is coated. Furthermore, we demonstrate that switching the tip coating from silver- to liquid metal-like materials can double the fraction of conductive bonds. Consequently, this work provides motivation to develop scalable methods for fabrication of the hybrid liquid-coated nanowires, whose dispersion in a polymer matrix is predicted to yield highly thermally conductive but electrically insulating composites.

  4. Exclusive meson production at COMPASS

    Pochodzalla, Josef; Moinester, Murray; Piller, Gunther; Sandacz, Andrzej; Vanderhaeghen, Marc; Pochodzalla, Josef; Mankiewicz, Lech; Moinester, Murray; Piller, Gunther; Sandacz, Andrzej; Vanderhaeghen, Marc

    1999-01-01

    We explore the feasibility to study exclusive meson production (EMP) in hard muon-proton scattering at the COMPASS experiment. These measurements constrain the off-forward parton distributions (OFPD's) of the proton, which are related to the quark orbital contribution to the proton spin.

  5. Magnetoconductance correction in zinc-blende semiconductor nanowires with spin-orbit coupling

    Kammermeier, Michael; Wenk, Paul; Schliemann, John; Heedt, Sebastian; Gerster, Thomas; Schäpers, Thomas

    2017-12-01

    We study the effects of spin-orbit coupling on the magnetoconductivity in diffusive cylindrical semiconductor nanowires. Following up on our former study on tubular semiconductor nanowires, we focus in this paper on nanowire systems where no surface accumulation layer is formed but instead the electron wave function extends over the entire cross section. We take into account the Dresselhaus spin-orbit coupling resulting from a zinc-blende lattice and the Rashba spin-orbit coupling, which is controlled by a lateral gate electrode. The spin relaxation rate due to Dresselhaus spin-orbit coupling is found to depend neither on the spin density component nor on the wire growth direction and is unaffected by the radial boundary. In contrast, the Rashba spin relaxation rate is strongly reduced for a wire radius that is smaller than the spin precession length. The derived model is fitted to the data of magnetoconductance measurements of a heavily doped back-gated InAs nanowire and transport parameters are extracted. At last, we compare our results to previous theoretical and experimental studies and discuss the occurring discrepancies.

  6. Sensing Responses Based on Transfer Characteristics of InAs Nanowire Field-Effect Transistors

    Savelyev, Igor; Blumin, Marina; Wang, Shiliang; Ruda, Harry E.

    2017-01-01

    Nanowire-based field-effect transistors (FETs) have demonstrated considerable promise for a new generation of chemical and biological sensors. Indium arsenide (InAs), by virtue of its high electron mobility and intrinsic surface accumulation layer of electrons, holds properties beneficial for creating high performance sensors that can be used in applications such as point-of-care testing for patients diagnosed with chronic diseases. Here, we propose devices based on a parallel configuration of InAs nanowires and investigate sensor responses from measurements of conductance over time and FET characteristics. The devices were tested in controlled concentrations of vapour containing acetic acid, 2-butanone and methanol. After adsorption of analyte molecules, trends in the transient current and transfer curves are correlated with the nature of the surface interaction. Specifically, we observed proportionality between acetic acid concentration and relative conductance change, off current and surface charge density extracted from subthreshold behaviour. We suggest the origin of the sensing response to acetic acid as a two-part, reversible acid-base and redox reaction between acetic acid, InAs and its native oxide that forms slow, donor-like states at the nanowire surface. We further describe a simple model that is able to distinguish the occurrence of physical versus chemical adsorption by comparing the values of the extracted surface charge density. These studies demonstrate that InAs nanowires can produce a multitude of sensor responses for the purpose of developing next generation, multi-dimensional sensor applications. PMID:28714903

  7. Solution-Based Epitaxial Growth of Magnetically Responsive Cu@Ni Nanowires

    Zhang, Shengmao

    2010-02-23

    An experiment was conducted to show the solution-based epitaxial growth of magnetically responsive Cu@Ni nanowires. The Ni-sheathed Cu nanowires were synthesized with a one-pot approach. 30 mL of high concentration NaOH, Cu(NO3)2. 3H2O, Cu(NO3)2. 3H2O and 0.07-0.30 mL of Ni(NO3)2. 6H 2O aqueous solutions were added into a plastic reactor with a capacity of 50.0 mL. A varying amount of ethylenediamine (EDA) and hydrazine were also added sequentially, followed by thorough mixing of all reagents. The dimension, morphology, and chemical composition of the products were examined with scanning electron microscopy with energy dispersive X-ray spectroscopy. The XPS analysis on the as formed Cu nanowires confirms that there is indeed no nickel inclusion in the nanowires prior to the formation of nickel overcoat, which rules out the possibility of Cu-Ni alloy formation.

  8. Single-crystal apatite nanowires sheathed in graphitic shells: synthesis, characterization, and application.

    Jeong, Namjo; Cha, Misun; Park, Yun Chang; Lee, Kyung Mee; Lee, Jae Hyup; Park, Byong Chon; Lee, Junghoon

    2013-07-23

    Vertically aligned one-dimensional hybrid structures, which are composed of apatite and graphitic structures, can be beneficial for orthopedic applications. However, they are difficult to generate using the current method. Here, we report the first synthesis of a single-crystal apatite nanowire encapsulated in graphitic shells by a one-step chemical vapor deposition. Incipient nucleation of apatite and its subsequent transformation to an oriented crystal are directed by derived gaseous phosphorine. Longitudinal growth of the oriented apatite crystal is achieved by a vapor-solid growth mechanism, whereas lateral growth is suppressed by the graphitic layers formed through arrangement of the derived aromatic hydrocarbon molecules. We show that this unusual combination of the apatite crystal and the graphitic shells can lead to an excellent osteogenic differentiation and bony fusion through a programmed smart behavior. For instance, the graphitic shells are degraded after the initial cell growth promoted by the graphitic nanostructures, and the cells continue proliferation on the bare apatite nanowires. Furthermore, a bending experiment indicates that such core-shell nanowires exhibited a superior bending stiffness compared to single-crystal apatite nanowires without graphitic shells. The results suggest a new strategy and direction for bone grafting materials with a highly controllable morphology and material conditions that can best stimulate bone cell differentiation and growth.

  9. Solution-Based Epitaxial Growth of Magnetically Responsive Cu@Ni Nanowires

    Zhang, Shengmao; Zeng, Hua Chun

    2010-01-01

    An experiment was conducted to show the solution-based epitaxial growth of magnetically responsive Cu@Ni nanowires. The Ni-sheathed Cu nanowires were synthesized with a one-pot approach. 30 mL of high concentration NaOH, Cu(NO3)2. 3H2O, Cu(NO3)2. 3H2O and 0.07-0.30 mL of Ni(NO3)2. 6H 2O aqueous solutions were added into a plastic reactor with a capacity of 50.0 mL. A varying amount of ethylenediamine (EDA) and hydrazine were also added sequentially, followed by thorough mixing of all reagents. The dimension, morphology, and chemical composition of the products were examined with scanning electron microscopy with energy dispersive X-ray spectroscopy. The XPS analysis on the as formed Cu nanowires confirms that there is indeed no nickel inclusion in the nanowires prior to the formation of nickel overcoat, which rules out the possibility of Cu-Ni alloy formation.

  10. Geometric effects on surface states in topological insulator Bi2Te3 nanowire

    Sengupta, Parijat; Kubis, Tillman; Povolotskyi, Michael; Klimeck, Gerhard

    2012-02-01

    Bismuth Telluride (BT) is a 3D topological insulator (TI) with surface states that have energy dispersion linear in momentum and forms a Dirac cone at low energy. In this work we investigate the surface properties of a BT nanowire and demonstrate the existence of TI states. We also show how such states vanish under certain geometric conditions. An atomistic model (sp3d5s* TB) is used to compute the energy dispersion in a BT nanowire. Penetration depth of the surface states is estimated by ratio of Fermi velocity and band-gap. BT possesses a tiny band-gap, which creates small localization of surface states and greater penetration in to the bulk. To offset this large spatial penetration, which is undesirable to avoid a direct coupling between surfaces, we expect that bigger cross-sections of BT nanowires would be needed to obtain stable TI states. Our numerical work validates this prediction. Furthermore, geometry of the nanowire is shown to influence the TI states. Using a combined analytical and numerical approach our results reveal that surface roughness impact electronic structure leading to Rashba type splits along z-direction. Cylindrical and square cross-sections are given as illustrative examples.

  11. Direct observation of Au/Ga2O3 peapodded nanowires and their plasmonic behaviors.

    Chen, Po-Han; Hsieh, Chin-Hua; Chen, Sheng-Yu; Wu, Chen-Hwa; Wu, Yi-Jen; Chou, Li-Jen; Chen, Lih-Juann

    2010-09-08

    Gold-peapodded Ga(2)O(3) nanowires were fabricated successfully in a well-controlled manner by thermal annealing of core-shell gold-Ga(2)O(3) nanowires. During the heating process, the core gold nanowires were broken up into chains of nanoparticles at sufficiently high temperature by the mechanism of Rayleigh instability. In addition, the size, shape, and interspacing between the particles can be manipulated by varying the annealing time and/or the forming gas. The plasmonic behaviors of these nanostructures are investigated by optical spectroscopy. A single nanowire optical device was designed, and its photonic characteristics were investigated. A remarkably high on/off photocurrent ratio in response to a 532 nm Nd:YAG laser light was found. As the size of the particle (pea) increases, the corresponding spectra are red-shifted. In addition, morphological changes of the peas lead to a distinct spectral response. The results may usher in the diverse applications in optoelectronics and biosensing devices with peapod nanostructures.

  12. Fabrication of CoPd alloy nanowire arrays on an anodic aluminum oxide/Ti/Si substrate and their enhanced magnetic properties

    Xu Cailing; Li Hua; Xue Tong; Li Hulin

    2006-01-01

    An anodic aluminum oxide/Ti/Si substrate was successfully synthesized by the anodization of an aluminum film on a Ti/Si substrate and then used as a template to grow 10 nm diameter CoPd alloy nanowires. X-ray diffraction and energy-dispersed X-ray patterns indicated that Co 0.97 Pd 0.03 nanowire arrays with a preferential orientation of (0 0 2) were formed during electrodeposition. High coercivity (about 1700 Oe) and squareness (about 0.85) were obtained in the samples when the magnetic field was applied parallel to the axis of the nanowires; these values are much larger than those of pure Co nanowire arrays with the same diameters

  13. A binary-decision-diagram-based two-bit arithmetic logic unit on a GaAs-based regular nanowire network with hexagonal topology

    Zhao Hongquan; Kasai, Seiya; Shiratori, Yuta; Hashizume, Tamotsu

    2009-01-01

    A two-bit arithmetic logic unit (ALU) was successfully fabricated on a GaAs-based regular nanowire network with hexagonal topology. This fundamental building block of central processing units can be implemented on a regular nanowire network structure with simple circuit architecture based on graphical representation of logic functions using a binary decision diagram and topology control of the graph. The four-instruction ALU was designed by integrating subgraphs representing each instruction, and the circuitry was implemented by transferring the logical graph structure to a GaAs-based nanowire network formed by electron beam lithography and wet chemical etching. A path switching function was implemented in nodes by Schottky wrap gate control of nanowires. The fabricated circuit integrating 32 node devices exhibits the correct output waveforms at room temperature allowing for threshold voltage variation.

  14. Approaching Inclusion as Social Practice: Processes of Inclusion and Exclusion

    Molbæk, Mette; Hansen, Janne Hedegaard; Lassen, Mikkel

    2018-01-01

    The article presents the results of a review of international research investigating mechanisms and processes of inclusion and exclusion as an ongoing part of social practice in a school context. The review forms part of a research project investigating the social practices of inclusive education...... in primary and lower-secondary education (age 6–16) in public schools as constituted by processes of inclusion and exclusion. The project aims to shift the scientific focus of research in inclusive education from the development of pedagogical and didactic practice to the importance of community construction...... through inclusion and exclusion processes. The project arises in context of Danish education policy, while the review looked for international research findings on the limits between inclusion and exclusion: how they are drawn, by whom, for what reasons, and for whose benefit? On the background...

  15. Teaching Form as Form

    Keiding, Tina Bering

    2012-01-01

    understanding of form per se, or, to use an expression from this text, of form as form. This challenge can be reduced to one question: how can design teaching support students in achieving not only the ability to recognize and describe different form-related concepts in existing design (i.e. analytical...

  16. Tunable magnetic nanowires for biomedical and harsh environment applications

    Ivanov, Yurii P.; Alfadhel, Ahmed; Al-Nassar, Mohammed Y.; Perez, Jose E.; Vazquez, Manuel; Chuvilin, Andrey; Kosel, Jü rgen

    2016-01-01

    We have synthesized nanowires with an iron core and an iron oxide (magnetite) shell by a facile low-cost fabrication process. The magnetic properties of the nanowires can be tuned by changing shell thicknesses to yield remarkable new properties and multi-functionality. A multi-domain state at remanence can be obtained, which is an attractive feature for biomedical applications, where a low remanence is desirable. The nanowires can also be encoded with different remanence values. Notably, the oxidation process of single-crystal iron nanowires halts at a shell thickness of 10 nm. The oxide shell of these nanowires acts as a passivation layer, retaining the magnetic properties of the iron core even during high-temperature operations. This property renders these core-shell nanowires attractive materials for application to harsh environments. A cell viability study reveals a high degree of biocompatibility of the core-shell nanowires.

  17. Optical properties of indium phosphide nanowire ensembles at various temperatures

    Lohn, Andrew J; Onishi, Takehiro; Kobayashi, Nobuhiko P [Baskin School of Engineering, University of California Santa Cruz, Santa Cruz, CA 95064 (United States); Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, University of California Santa Cruz-NASA Ames Research Center, Moffett Field, CA 94035 (United States)

    2010-09-03

    Ensembles that contain two types (zincblende and wurtzite) of indium phosphide nanowires grown on non-single crystalline surfaces were studied by micro-photoluminescence and micro-Raman spectroscopy at various low temperatures. The obtained spectra are discussed with the emphasis on the effects of differing lattice types, geometries, and crystallographic orientations present within an ensemble of nanowires grown on non-single crystalline surfaces. In the photoluminescence spectra, a typical Varshni dependence of band gap energy on temperature was observed for emissions from zincblende nanowires and in the high temperature regime energy transfer from excitonic transitions and band-edge transitions was identified. In contrast, the photoluminescence emissions associated with wurtzite nanowires were rather insensitive to temperature. Raman spectra were collected simultaneously from zincblende and wurtzite nanowires coexisting in an ensemble. Raman peaks of the wurtzite nanowires are interpreted as those related to the zincblende nanowires by a folding of the phonon dispersion.

  18. Optical properties of indium phosphide nanowire ensembles at various temperatures

    Lohn, Andrew J; Onishi, Takehiro; Kobayashi, Nobuhiko P

    2010-01-01

    Ensembles that contain two types (zincblende and wurtzite) of indium phosphide nanowires grown on non-single crystalline surfaces were studied by micro-photoluminescence and micro-Raman spectroscopy at various low temperatures. The obtained spectra are discussed with the emphasis on the effects of differing lattice types, geometries, and crystallographic orientations present within an ensemble of nanowires grown on non-single crystalline surfaces. In the photoluminescence spectra, a typical Varshni dependence of band gap energy on temperature was observed for emissions from zincblende nanowires and in the high temperature regime energy transfer from excitonic transitions and band-edge transitions was identified. In contrast, the photoluminescence emissions associated with wurtzite nanowires were rather insensitive to temperature. Raman spectra were collected simultaneously from zincblende and wurtzite nanowires coexisting in an ensemble. Raman peaks of the wurtzite nanowires are interpreted as those related to the zincblende nanowires by a folding of the phonon dispersion.

  19. A detailed study of magnetization reversal in individual Ni nanowires

    Vidal, Enrique Vilanova; Ivanov, Yurii P.; Mohammed, Hanan; Kosel, Jü rgen

    2015-01-01

    Magnetic nanowires have emerged as essential components for a broad range of applications. In many cases, a key property of these components is the switching field, which is studied as a function of the angle between the field and the nanowire. We found remarkable differences of up to 100% between the switching fields of different nanowires from the same fabrication batch. Our experimental results and micromagnetic simulations indicate that the nanowires exhibit a single domain behavior and that the switching mechanism includes vortex domain wall motion across the nanowire. The differences between the switching fields are attributed to different cross-sections of the nanowires, as found by electron microscopy. While a circular cross-section yields the smallest switching field values, any deviation from this shape results in an increase of the switching field. The shape of the nanowires' cross-sections is thus a critical parameter that has not been previously taken into account.

  20. Vertically aligned nanowires from boron-doped diamond.

    Yang, Nianjun; Uetsuka, Hiroshi; Osawa, Eiji; Nebel, Christoph E

    2008-11-01

    Vertically aligned diamond nanowires with controlled geometrical properties like length and distance between wires were fabricated by use of nanodiamond particles as a hard mask and by use of reactive ion etching. The surface structure, electronic properties, and electrochemical functionalization of diamond nanowires were characterized by atomic force microscopy (AFM) and scanning tunneling microscopy (STM) as well as electrochemical techniques. AFM and STM experiments show that diamond nanowire etched for 10 s have wire-typed structures with 3-10 nm in length and with typically 11 nm spacing in between. The electrode active area of diamond nanowires is enhanced by a factor of 2. The functionalization of nanowire tips with nitrophenyl molecules is characterized by STM on clean and on nitrophenyl molecule-modified diamond nanowires. Tip-modified diamond nanowires are promising with respect to biosensor applications where controlled biomolecule bonding is required to improve chemical stability and sensing significantly.

  1. Tunable magnetic nanowires for biomedical and harsh environment applications

    Ivanov, Yurii P.

    2016-04-13

    We have synthesized nanowires with an iron core and an iron oxide (magnetite) shell by a facile low-cost fabrication process. The magnetic properties of the nanowires can be tuned by changing shell thicknesses to yield remarkable new properties and multi-functionality. A multi-domain state at remanence can be obtained, which is an attractive feature for biomedical applications, where a low remanence is desirable. The nanowires can also be encoded with different remanence values. Notably, the oxidation process of single-crystal iron nanowires halts at a shell thickness of 10 nm. The oxide shell of these nanowires acts as a passivation layer, retaining the magnetic properties of the iron core even during high-temperature operations. This property renders these core-shell nanowires attractive materials for application to harsh environments. A cell viability study reveals a high degree of biocompatibility of the core-shell nanowires.

  2. A detailed study of magnetization reversal in individual Ni nanowires

    Vidal, Enrique Vilanova

    2015-01-19

    Magnetic nanowires have emerged as essential components for a broad range of applications. In many cases, a key property of these components is the switching field, which is studied as a function of the angle between the field and the nanowire. We found remarkable differences of up to 100% between the switching fields of different nanowires from the same fabrication batch. Our experimental results and micromagnetic simulations indicate that the nanowires exhibit a single domain behavior and that the switching mechanism includes vortex domain wall motion across the nanowire. The differences between the switching fields are attributed to different cross-sections of the nanowires, as found by electron microscopy. While a circular cross-section yields the smallest switching field values, any deviation from this shape results in an increase of the switching field. The shape of the nanowires\\' cross-sections is thus a critical parameter that has not been previously taken into account.

  3. Growth and characterisation of group-III nitride-based nanowires for devices

    Meijers, R J

    2007-08-30

    faults sometimes form at the base of the wires. Optical spectra also exhibit a band gap consistent with strain-free GaN in the upper part of the wires. For InN a band gap value of 0.7-0.8 eV has been determined at low temperatures. The doping concentration and the position of the Fermi-level in InN depend very much on the crystalline quality. In general the luminescence of GaN and InN improves with increased T{sub sub}. For GaN the defect-related peaks decrease and in InN the carrier concentration is reduced. Optical spectra confirm the effective incorporation of the dopant species in the nanowires despite a large nanowire surface and unfavourable growth conditions for doping, which are required for nitride nanowire growth. (orig.)

  4. Controllable growth and optical properties of InP and InP/InAs nanostructures on the sidewalls of GaAs nanowires

    Yan, Xin; Zhang, Xia; Li, Junshuai; Cui, Jiangong; Ren, Xiaomin

    2014-01-01

    The growth and optical properties of InP and InP/InAs nanostructures on GaAs nanowires are investigated. InP quantum well and quantum dots (QDs) are formed on the sidewalls of GaAs nanowires successively with increasing the deposition time of InP. The GaAs/InP nanowire heterostructure exhibits a type-II band alignment. The wavelength of the InP quantum well is in the range of 857–892 nm at 77 K, which means that the quantum well is nearly fully strained. The InP quantum dot, which has a bow-shaped cross section, exhibits dislocation-free pure zinc blende structure. Stranski-Krastanow InAs quantum dots are subsequently formed on the GaAs/InP nanowire core-shell structure. The InAs quantum dots are distributed over the middle part of the nanowire, indicating that the In atoms contributing to the quantum dots mainly come from the vapor rather than the substrate. The longest emission wavelength obtained from the InAs QDs is 1039 nm at 77 K. The linewidth is as narrow as 46.3 meV, which is much narrower than those on planar InP substrates and wurtzite InP nanowires, suggesting high-crystal-quality, phase-purity, and size-uniformity of quantum dots

  5. Spontaneous and Selective Nanowelding of Silver Nanowires by Electrochemical Ostwald Ripening and High Electrostatic Potential at the Junctions for High-Performance Stretchable Transparent Electrodes.

    Lee, Hyo-Ju; Oh, Semi; Cho, Ki-Yeop; Jeong, Woo-Lim; Lee, Dong-Seon; Park, Seong-Ju

    2018-04-25

    Metal nanowires have been gaining increasing attention as the most promising stretchable transparent electrodes for emerging field of stretchable optoelectronic devices. Nanowelding technology is a major challenge in the fabrication of metal nanowire networks because the optoelectronic performances of metal nanowire networks are mostly limited by the high junction resistance between nanowires. We demonstrate the spontaneous and selective welding of Ag nanowires (AgNWs) by Ag solders via an electrochemical Ostwald ripening process and high electrostatic potential at the junctions of AgNWs. The AgNWs were welded by depositing Ag nanoparticles (AgNPs) on the conducting substrate and then exposing them to water at room temperature. The AgNPs were spontaneously dissolved in water to form Ag + ions, which were then reduced to single-crystal Ag solders selectively at the junctions of the AgNWs. Hence, the welded AgNWs showed higher optoelectronic and stretchable performance compared to that of as-formed AgNWs. These results indicate that electrochemical Ostwald ripening-based welding can be used as a promising method for high-performance metal nanowire electrodes in various next-generation devices such as stretchable solar cells, stretchable displays, organic light-emitting diodes, and skin sensors.

  6. Vibrational spectra of nanowires measured using laser doppler vibrometry and STM studies of epitaxial graphene : an LDRD fellowship report.

    Biedermann, Laura Butler

    2009-09-01

    MWNTs, their vibration spectra was more extensively studied. The thermal vibration spectra of Ag{sub 2}Ga nanoneedles was measured under both ambient and low-vacuum conditions. The operational deflection shapes of the vibrating Ag{sub 2}Ga nanoneedles was also measured, allowing confirmation of the eigenmodes of vibration. The modulus of the crystalline nanoneedles was 84.3 {+-} 1.0 GPa. Gas damping is the dominate mechanism of energy loss for nanowires oscillating under ambient conditions. The measured quality factors, Q, of oscillation are in line with theoretical predictions of air damping in the free molecular gas damping regime. In the free molecular regime, Q{sub gas} is linearly proportional to the density and diameter of the nanowire and inversely proportional to the air pressure. Since the density of the Ag{sub 2}Ga nanoneedles is three times that of the MWNTs, the Ag{sub 2}Ga nanoneedles have greater Q at atmospheric pressures. Our initial measurements of Q for Ag{sub 2}Ga nanoneedles in low-vacuum (10 Torr) suggest that the intrinsic Q of these nanoneedles may be on the order of 1000. The epitaxial carbon that grows after heating (000{bar 1}) silicon carbide (SiC) to high temperatures (1450-1600) in vacuum was also studied. At these high temperatures, the surface Si atoms sublime and the remaining C atoms reconstruct to form graphene. X-ray photoelectron spectroscopy (XPS) and scanning tunneling microscopy (STM) were used to characterize the quality of the few-layer graphene (FLG) surface. The XPS studies were useful in confirming the graphitic composition and measuring the thickness of the FLG samples. STM studies revealed a wide variety of nanometer-scale features that include sharp carbon-rich ridges, moire superlattices, one-dimensional line defects, and grain boundaries. By imaging these features with atomic scale resolution, considerable insight into the growth mechanisms of FLG on the carbon-face of SiC is obtained.

  7. Rare earth silicide nanowires on silicon surfaces

    Wanke, Martina

    2008-11-10

    The growth, structure and electronic properties of rare earth silicide nanowires are investigated on planar and vicinal Si(001) und Si(111) surfaces with scanning tunneling microscopy (STM), low energy electron diffraction (LEED) and angle-resolved photoelectron spectroscopy (ARPES). On all surfaces investigated within this work hexagonal disilicides are grown epitaxially with a lattice mismatch of -2.55% up to +0.83% along the hexagonal a-axis. Along the hexagonal c-axis the lattice mismatch is essentially larger with 6.5%. On the Si(001)2 x 1 surface two types of nanowires are grown epitaxially. The socalled broad wires show a one-dimensional metallic valence band structure with states crossing the Fermi level. Along the nanowires two strongly dispersing states at the anti J point and a strongly dispersing state at the anti {gamma} point can be observed. Along the thin nanowires dispersing states could not be observed. Merely in the direction perpendicular to the wires an intensity variation could be observed, which corresponds to the observed spacial structure of the thin nanowires. The electronic properties of the broad erbium silicide nanowires are very similar to the broad dysprosium silicide nanowires. The electronic properties of the DySi{sub 2}-monolayer and the Dy{sub 3}Si{sub 5}-multilayer on the Si(111) surface are investigated in comparison to the known ErSi{sub 2}/Si(111) and Er{sub 3}Si{sub 5}/Si(111) system. The positions and the energetic locations of the observed band in the surface Brillouin zone will be confirmed for dysprosium. The shape of the electron pockets in the (vector)k {sub parallel} space is elliptical at the anti M points, while the hole pocket at the anti {gamma} point is showing a hexagonal symmetry. On the Si(557) surface the structural and electronic properties depend strongly on the different preparation conditions likewise, in particular on the rare earth coverage. At submonolayer coverage the thin nanowires grow in wide areas

  8. Thermoelectric properties of semiconductor nanowire networks

    Roslyak, Oleksiy; Piryatinski, Andrei

    2016-03-01

    To examine the thermoelectric (TE) properties of a semiconductor nanowire (NW) network, we propose a theoretical approach mapping the TE network on a two-port network. In contrast to a conventional single-port (i.e., resistor) network model, our model allows for large scale calculations showing convergence of TE figure of merit, ZT, with an increasing number of junctions. Using this model, numerical simulations are performed for the Bi2Te3 branched nanowire (BNW) and Cayley tree NW (CTNW) network. We find that the phonon scattering at the network junctions plays a dominant role in enhancing the network ZT. Specifically, disordered BNW and CTNW demonstrate an order of magnitude higher ZT enhancement compared to their ordered counterparts. Formation of preferential TE pathways in CTNW makes the network effectively behave as its BNW counterpart. We provide formalism for simulating large scale nanowire networks hinged upon experimentally measurable TE parameters of a single T-junction.

  9. Plasmonic Waveguide-Integrated Nanowire Laser

    Bermudez-Urena, Esteban; Tutuncuoglu, Gozde; Cuerda, Javier

    2017-01-01

    Next-generation optoelectronic devices and photonic circuitry will have to incorporate on-chip compatible nanolaser sources. Semiconductor nanowire lasers have emerged as strong candidates for integrated systems with applications ranging from ultrasensitive sensing to data communication technolog......Next-generation optoelectronic devices and photonic circuitry will have to incorporate on-chip compatible nanolaser sources. Semiconductor nanowire lasers have emerged as strong candidates for integrated systems with applications ranging from ultrasensitive sensing to data communication...... technologies. Despite significant advances in their fundamental aspects, the integration within scalable photonic circuitry remains challenging. Here we report on the realization of hybrid photonic devices consisting of nanowire lasers integrated with wafer-scale lithographically designed V-groove plasmonic...

  10. Longitudinal magnetoresistance and magnototermopower in Bi nanowires

    Para, G.

    2011-01-01

    Full text: The galvanomagnetic effect of single crystals Bi nanowires have been studied in longitudinal magnetic fields up to 14 T. The influence of diameters, temperature and deformation extension on the longitudinal magnetoresistance and magnetotermopower (H||I, H||ΔT) of bismuth nanowires is studied. Elastic deformation measurements were conducted at maximum relative elongation 2 %. For the first time have been investigated the magnetotermopower of Bi nanowires with d=45 nm. Essentially non monotonic dependence H max on temperature in longitudinal thermopower in wires with d=45-60 nm is found out. Such difference in behavior of maximum on R(H) and on α(H) in wires with d<100nm says that the behavior of resistance is caused by other mechanism, then thermopower. (author)

  11. Method for producing nanowire-polymer composite electrodes

    Pei, Qibing; Yu, Zhibin

    2017-11-21

    A method for producing flexible, nanoparticle-polymer composite electrodes is described. Conductive nanoparticles, preferably metal nanowires or nanotubes, are deposited on a smooth surface of a platform to produce a porous conductive layer. A second application of conductive nanoparticles or a mixture of nanoparticles can also be deposited to form a porous conductive layer. The conductive layer is then coated with at least one coating of monomers that is polymerized to form a conductive layer-polymer composite film. Optionally, a protective coating can be applied to the top of the composite film. In one embodiment, the monomer coating includes light transducing particles to reduce the total internal reflection of light through the composite film or pigments that absorb light at one wavelength and re-emit light at a longer wavelength. The resulting composite film has an active side that is smooth with surface height variations of 100 nm or less.

  12. Andreev molecules in semiconductor nanowire double quantum dots.

    Su, Zhaoen; Tacla, Alexandre B; Hocevar, Moïra; Car, Diana; Plissard, Sébastien R; Bakkers, Erik P A M; Daley, Andrew J; Pekker, David; Frolov, Sergey M

    2017-09-19

    Chains of quantum dots coupled to superconductors are promising for the realization of the Kitaev model of a topological superconductor. While individual superconducting quantum dots have been explored, control of longer chains requires understanding of interdot coupling. Here, double quantum dots are defined by gate voltages in indium antimonide nanowires. High transparency superconducting niobium titanium nitride contacts are made to each of the dots in order to induce superconductivity, as well as probe electron transport. Andreev bound states induced on each of dots hybridize to define Andreev molecular states. The evolution of these states is studied as a function of charge parity on the dots, and in magnetic field. The experiments are found in agreement with a numerical model.Quantum dots in a nanowire are one possible approach to creating a solid-state quantum simulator. Here, the authors demonstrate the coupling of electronic states in a double quantum dot to form Andreev molecule states; a potential building block for longer chains suitable for quantum simulation.

  13. Native oxide formation on pentagonal copper nanowires: A TEM study

    Hajimammadov, Rashad; Mohl, Melinda; Kordas, Krisztian

    2018-06-01

    Hydrothermally synthesized copper nanowires were allowed to oxidize in air at room temperature and 30% constant humidity for the period of 22 days. The growth of native oxide layer was followed up by high-resolution transmission electron microscopy and diffraction to reveal and understand the kinetics of the oxidation process. Copper oxides appear in the form of differently oriented crystalline phases around the metallic core as a shell-like layer (Cu2O) and as nanoscopic islands (CuO) on the top of that. Time dependent oxide thickness data suggests that oxidation follows the field-assisted growth model at the beginning of the process, as practically immediately an oxide layer of ∼2.8 nm thickness develops on the surface. However, after this initial rapid growth, the local field attenuates and the classical parabolic diffusion limited growth plays the main role in the oxidation. Because of the single crystal facets on the side surface of penta-twinned Cu nanowires, the oxidation rate in the diffusion limited regime is lower than in polycrystalline films.

  14. Exclusive rare radiative decays of B mesons

    Barik, N.; Kar, S.; Dash, P.C.

    1998-01-01

    The exclusive rare radiative B decays are studied in the relativistic independent quark model based on the confining potential in the scalar-vector harmonic form. The relevant form factors as well as the branching ratios for the processes B 0 →K *0 γ and B ± →K *± γ have been estimated in reasonable agreement with the available experimental data. The result compares well with several other model predictions. The calculation has been extended to the CKM-favored process B s →φγ and CKM-suppressed processes B u,d →ργ and B s →K * γ. copyright 1997 The American Physical Society

  15. Racial Exclusion in the Online World

    Bhoomi K. Thakore

    2013-05-01

    Full Text Available As the internet has become an integral part of everyday life, it is understood that patterns of racial stereotyping and discrimination found in the offline world are often reproduced online. In our paper, we examine two exclusionary practices in an online environment for adult toy collectors: First, the exclusion of non-white individuals who are expected to form immediate friendships with other non-white members; and second, the essentializing of racial issues when concerns over the lack of racial diversity in the toys are discussed. This dismissal is often directly connected to non-white members’ decisions to no longer participate, resulting in a new form of segregation within virtual space.

  16. Design and Characterisation of III-V Semiconductor Nanowire Lasers

    Saxena, Dhruv

    The development of small, power-efficient lasers underpins many of the technologies that we utilise today. Semiconductor nanowires are promising for miniaturising lasers to even smaller dimensions. III-V semiconductors, such as Gallium Arsenide (GaAs) and Indium Phosphide (InP), are the most widely used materials for optoelectronic devices and so the development of nanowire lasers based on these materials is expected to have technologically significant outcomes. This PhD dissertation presents a comprehensive study of the design of III-V semiconductor nanowire lasers, with bulk and quantum confined active regions. Based on the design, various III-V semiconductor nanowire lasers are demonstrated, namely, GaAs nanowire lasers, GaAs/AlGaAs multi-quantum well (MQW) nanowire lasers and InP nanowire lasers. These nanowire lasers are shown to operate at room temperature, have low thresholds, and lase from different transverse modes. The structural and optoelectronic quality of nanowire lasers are characterised via electron microscopy and photoluminescence spectroscopic techniques. Lasing is characterised in all these devices by optical pumping. The lasing characteristics are analysed by rate equation modelling and the lasing mode(s) in these devices is characterised by threshold gain modelling, polarisation measurements and Fourier plane imaging. Firstly, GaAs nanowire lasers that operate at room temperature are demonstrated. This is achieved by determining the optimal nanowire diameter to reduce threshold gain and by passivating nanowires to improve their quantum efficiency (QE). High-quality surface passivated GaAs nanowires of suitable diameters are grown. The growth procedure is tailored to improve both QE and structural uniformity of nanowires. Room-temperature lasing is demonstrated from individual nanowires and lasing is characterised to be from TM01 mode by threshold gain modelling. To lower threshold even further, nanowire lasers with GaAs/AlGaAs coaxial multi

  17. Hierarchical α-MnO2 nanowires@Ni1-x Mnx Oy nanoflakes core-shell nanostructures for supercapacitors.

    Wang, Hsin-Yi; Xiao, Fang-Xing; Yu, Le; Liu, Bin; Lou, Xiong Wen David

    2014-08-13

    A facile two-step solution-phase method has been developed for the preparation of hierarchical α-MnO2 nanowires@Ni1-x Mnx Oy nanoflakes core-shell nanostructures. Ultralong α-MnO2 nanowires were synthesized by a hydrothermal method in the first step. Subsequently, Ni1-x Mnx Oy nanoflakes were grown on α-MnO2 nanowires to form core-shell nanostructures using chemical bath deposition followed by thermal annealing. Both solution-phase methods can be easily scaled up for mass production. We have evaluated their application in supercapacitors. The ultralong one-dimensional (1D) α-MnO2 nanowires in hierarchical core-shell nanostructures offer a stable and efficient backbone for charge transport; while the two-dimensional (2D) Ni1-x Mnx Oy nanoflakes on α-MnO2 nanowires provide high accessible surface to ions in the electrolyte. These beneficial features enable the electrode with high capacitance and reliable stability. The capacitance of the core-shell α-MnO2 @Ni1-x Mnx Oy nanostructures (x = 0.75) is as high as 657 F g(-1) at a current density of 250 mA g(-1) , and stable charging-discharging cycling over 1000 times at a current density of 2000 mA g(-1) has been realized. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Fabrication of three-dimensional MIS nano-capacitor based on nano-imprinted single crystal silicon nanowire arrays

    Zhai, Yujia; Palard, Marylene; Mathew, Leo; Hussain, Muhammad Mustafa; Willson, Grant Grant; Tutuc, Emanuel; Banerjee, Sanjay Kumar

    2012-01-01

    We report fabrication of single crystalline silicon nanowire based-three-dimensional MIS nano-capacitors for potential analog and mixed signal applications. The array of nanowires is patterned by Step and Flash Imprint Lithography (S-FIL). Deep silicon etching (DSE) is used to form the nanowires with high aspect ratio, increase the electrode area and thus significantly enhance the capacitance. High-! dielectric is deposited by highly conformal atomic layer deposition (ALD) Al2O3 over the Si nanowires, and sputtered metal TaN serves as the electrode. Electrical measurements of fabricated capacitors show the expected increase of capacitance with greater nanowire height and decreasing dielectric thickness, consistent with calculations. Leakage current and time-dependent dielectric breakdown (TDDB) are also measured and compared with planar MIS capacitors. In view of greater interest in 3D transistor architectures, such as FinFETs, 3D high density MIS capacitors offer an attractive device technology for analog and mixed signal applications. - See more at: http://www.eurekaselect.com/105099/article#sthash.EzeJxk6j.dpuf

  19. Rapid Fabrication of Silver Nanowires through Photoreduction of Silver Nitrate from an Anodic-Aluminum-Oxide Template

    Lin, Yu-Hsuan; Chen, Kun-Tso; Ho, Jeng-Rong

    2011-06-01

    A method for rapidly fabricating dense and high-aspect-ratio silver nanowires, with wire diameter of 200 nm and wire length more than 30 µm, is reported. The fabrication process simply involves filling the silver nitrate solution into the pores of an anodic-aluminum-oxide (AAO) membrane through capillary attraction and irradiating the dried template AAO membrane using a pulsed ArF excimer laser. Through varying the thickness and pore diameter of the employed AAO membrane, the primary dimensions of the targeted silver nanowires can be plainly specified; and, by amending the initial concentration of the silver nitrate solution and adjusting the laser operation parameters, laser fluence and number of laser pulses, the surface morphology and size of the resulting nanowires can be finely regulated. The wire formation mechanism is considered through two stages: the period of precipitation of silver particles from the dried silver nitrate film through the laser-induced photoreduction; and, the phase of clustering, merging and fusing of the reduced particles to form nanowires in the template pores by the thermal energy owing to photothermal effect. This approach is straightforward and takes the advantage that all the fabrication processes can be executed in an ambient environment and at room temperature. In addition, by the excellence in local processing that the laser possesses, this method is suitable for precisely growing nanowires.

  20. Fabrication of three-dimensional MIS nano-capacitor based on nano-imprinted single crystal silicon nanowire arrays

    Zhai, Yujia

    2012-11-26

    We report fabrication of single crystalline silicon nanowire based-three-dimensional MIS nano-capacitors for potential analog and mixed signal applications. The array of nanowires is patterned by Step and Flash Imprint Lithography (S-FIL). Deep silicon etching (DSE) is used to form the nanowires with high aspect ratio, increase the electrode area and thus significantly enhance the capacitance. High-! dielectric is deposited by highly conformal atomic layer deposition (ALD) Al2O3 over the Si nanowires, and sputtered metal TaN serves as the electrode. Electrical measurements of fabricated capacitors show the expected increase of capacitance with greater nanowire height and decreasing dielectric thickness, consistent with calculations. Leakage current and time-dependent dielectric breakdown (TDDB) are also measured and compared with planar MIS capacitors. In view of greater interest in 3D transistor architectures, such as FinFETs, 3D high density MIS capacitors offer an attractive device technology for analog and mixed signal applications. - See more at: http://www.eurekaselect.com/105099/article#sthash.EzeJxk6j.dpuf

  1. Spray-Deposited Large-Area Copper Nanowire Transparent Conductive Electrodes and Their Uses for Touch Screen Applications.

    Chu, Hsun-Chen; Chang, Yen-Chen; Lin, Yow; Chang, Shu-Hao; Chang, Wei-Chung; Li, Guo-An; Tuan, Hsing-Yu

    2016-05-25

    Large-area conducting transparent conducting electrodes (TCEs) were prepared by a fast, scalable, and low-cost spray deposition of copper nanowire (CuNW) dispersions. Thin, long, and pure copper nanowires were obtained via the seed-mediated growth in an organic solvent-based synthesis. The mean length and diameter of nanowires are, respectively, 37.7 μm and 46 nm, corresponding to a high-mean-aspect ratio of 790. These wires were spray-deposited onto a glass substrate to form a nanowire conducting network which function as a TCE. CuNW TCEs exhibit high-transparency and high-conductivity since their relatively long lengths are advantageous in lowering in the sheet resistance. For example, a 2 × 2 cm(2) transparent nanowire electrode exhibits transmittance of T = 90% with a sheet resistance as low as 52.7 Ω sq(-1). Large-area sizes (>50 cm(2)) of CuNW TCEs were also prepared by the spray coating method and assembled as resistive touch screens that can be integrated with a variety of devices, including LED lighting array, a computer, electric motors, and audio electronic devices, showing the capability to make diverse sizes and functionalities of CuNW TCEs by the reported method.

  2. Nanowire and microwire fabrication technique and product

    Sumant, Anirudha V.; Zach, Michael; Marten, Alan David

    2018-02-27

    A continuous or semi-continuous process for fabricating nanowires or microwires makes use of the substantially planar template that may be moved through electrochemical solution to grow nanowires or microwires on exposed conductive edges on the surface of that template. The planar template allows fabrication of the template using standard equipment and techniques. Adhesive transfer may be used to remove the wires from the template and in one embodiment to draw a continuous wire from the template to be wound around the drum.

  3. Silicon nanowires for photovoltaic solar energy conversion.

    Peng, Kui-Qing; Lee, Shuit-Tong

    2011-01-11

    Semiconductor nanowires are attracting intense interest as a promising material for solar energy conversion for the new-generation photovoltaic (PV) technology. In particular, silicon nanowires (SiNWs) are under active investigation for PV applications because they offer novel approaches for solar-to-electric energy conversion leading to high-efficiency devices via simple manufacturing. This article reviews the recent developments in the utilization of SiNWs for PV applications, the relationship between SiNW-based PV device structure and performance, and the challenges to obtaining high-performance cost-effective solar cells.

  4. Plasmon resonant cavities in vertical nanowire arrays

    Bora, Mihail; Bond, Tiziana C.; Fasenfest, Benjamin J.; Behymer, Elaine M.

    2014-07-15

    Tunable plasmon resonant cavity arrays in paired parallel nanowire waveguides are presented. Resonances can be observed when the waveguide length is an odd multiple of quarter plasmon wavelengths, consistent with boundary conditions of node and antinode at the ends. Two nanowire waveguides can satisfy the dispersion relation of a planar metal-dielectric-metal waveguide of equivalent width equal to the square field average weighted gap. Confinement factors of over 10.sup.3 are possible due to plasmon focusing in the inter-wire space.

  5. Nanowires and nanostructures fabrication using template methods

    Mátéfi-Tempfli, Stefan; Mátéfi-Tempfli, M.; Vlad, A.

    2009-01-01

    One of the great challenges of today is to find reliable techniques for the fabrication of nanomaterials and nanostructures. Methods based on template synthesis and on self organization are the most promising due to their easiness and low cost. This paper focuses on the electrochemical synthesis ...... of nanowires and nanostructures using nanoporous host materials such as supported anodic aluminum considering it as a key template for nanowires based devices. New ways are opened for applications by combining such template synthesis methods with nanolithographic techniques....

  6. Smooth Nanowire/Polymer Composite Transparent Electrodes

    Gaynor, Whitney; Burkhard, George F.; McGehee, Michael D.; Peumans, Peter

    2011-01-01

    Smooth composite transparent electrodes are fabricated via lamination of silver nanowires into the polymer poly-(4,3-ethylene dioxythiophene): poly(styrene-sulfonate) (PEDOT:PSS). The surface roughness is dramatically reduced compared to bare nanowires. High-efficiency P3HT:PCBM organic photovoltaic cells can be fabricated using these composites, reproducing the performance of cells on indium tin oxide (ITO) on glass and improving the performance of cells on ITO on plastic. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Enhanced magnetotransport in nanopatterned manganite nanowires.

    Marín, Lorena; Morellón, Luis; Algarabel, Pedro A; Rodríguez, Luis A; Magén, César; De Teresa, José M; Ibarra, Manuel R

    2014-02-12

    We have combined optical and focused ion beam lithographies to produce large aspect-ratio (length-to-width >300) single-crystal nanowires of La2/3Ca1/3MnO3 that preserve their functional properties. Remarkably, an enhanced magnetoresistance value of 34% in an applied magnetic field of 0.1 T in the narrowest 150 nm nanowire is obtained. The strain release at the edges together with a destabilization of the insulating regions is proposed to account for this behavior. This opens new strategies to implement these structures in functional spintronic devices.

  8. Smooth Nanowire/Polymer Composite Transparent Electrodes

    Gaynor, Whitney

    2011-04-29

    Smooth composite transparent electrodes are fabricated via lamination of silver nanowires into the polymer poly-(4,3-ethylene dioxythiophene): poly(styrene-sulfonate) (PEDOT:PSS). The surface roughness is dramatically reduced compared to bare nanowires. High-efficiency P3HT:PCBM organic photovoltaic cells can be fabricated using these composites, reproducing the performance of cells on indium tin oxide (ITO) on glass and improving the performance of cells on ITO on plastic. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Multishell structure formation in Ni nanowire under uniaxial strain along <0 0 1> crystallographic direction: A molecular dynamics simulation

    Wang Li, E-mail: wanglihxf@sdu.edu.c [School of Mechanical and Electrical Engineering, Shandong University at Weihai, 180 Wenhuaxi Road, Weihai 264209 (China); Peng Chuanxiao [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, Jinan 250061 (China); Gong Jianhong [School of Mechanical and Electrical Engineering, Shandong University at Weihai, 180 Wenhuaxi Road, Weihai 264209 (China)

    2010-04-01

    Molecular dynamics simulations based upon embedded-atom-method potential are employed to explore the fracture behavior of Ni nanowire along <0 0 1> crystallographic direction at temperature of 300 K. We find the formation of (5,5) multishell structure (MS), which is transformed from (6,5) MS at the necking region of nanowire under the strain rate of 0.02%ps{sup -1}. A reorientation transformation from <0 0 1> to <1 1 0> is first detected before formation of (6,5) MS. The formed (5,5) MS is more stable and can be tensioned longer as lower strain rate is loaded.

  10. Transport Phenomena in Nanowires, Nanotubes, and Other Low-Dimensional Systems

    Montes Muñ oz, Enrique

    2017-01-01

    and their dependence on the nanowire growth direction, diameter, and length. At equilibrium Au-nanowire distance we find strong electronic coupling between electrodes and nanowire, resulting in low contact resistance. For the tunneling regime, the decay

  11. Brownian motion of tethered nanowires.

    Ota, Sadao; Li, Tongcang; Li, Yimin; Ye, Ziliang; Labno, Anna; Yin, Xiaobo; Alam, Mohammad-Reza; Zhang, Xiang

    2014-05-01

    Brownian motion of slender particles near a boundary is ubiquitous in biological systems and in nanomaterial assembly, but the complex hydrodynamic interaction in those systems is still poorly understood. Here, we report experimental and computational studies of the Brownian motion of silicon nanowires tethered on a substrate. An optical interference method enabled direct observation of microscopic rotations of the slender bodies in three dimensions with high angular and temporal resolutions. This quantitative observation revealed anisotropic and angle-dependent hydrodynamic wall effects: rotational diffusivity in inclined and azimuth directions follows different power laws as a function of the length, ∼ L(-2.5) and ∼ L(-3), respectively, and is more hindered for smaller inclined angles. In parallel, we developed an implicit simulation technique that takes the complex wire-wall hydrodynamic interactions into account efficiently, the result of which agreed well with the experimentally observed angle-dependent diffusion. The demonstrated techniques provide a platform for studying the microrheology of soft condensed matters, such as colloidal and biological systems near interfaces, and exploring the optimal self-assembly conditions of nanostructures.

  12. Cu assisted synthesis of self-supported PdCu alloy nanowires with enhanced performances toward ethylene glycol electrooxidation

    Yan, Bo; Xu, Hui; Zhang, Ke; Li, Shujin; Wang, Jin; Shi, Yuting; Du, Yukou

    2018-03-01

    Self-supported PdCu alloy nanowires fabricated by a facile one-pot method have been reported, which copper assists in the morphological transformation from graininess to nanowires. The copper incorporated with palladium to form alloy structures cannot only cut down the usage of noble metal but also enhance their catalytic performances. The catalysts with self-supported structure and proper ratio of palladium to copper show great activity and long-term stability for the electrooxidation of ethylene glycol in alkaline solution. Especially for Pd43Cu57, its mass activity reaches to 5570.83 mA mg-1, which is 3.12 times as high as commercial Pd/C. This study highlights an accessible strategy to prepare self-supported PdCu alloy nanowires and their potential applications in renewable energy fields.

  13. Fabricating a silicon nanowire by using the proximity effect in electron beam lithography for investigation of the Coulomb blockade effect

    Zhang Xiangao; Fang Zhonghui; Chen Kunji; Xu Jun; Huang Xinfan

    2011-01-01

    We present an approach to fabricate a silicon nanowire relying on the proximity effect in electron beam lithography with a low acceleration voltage system by designing the exposure patterns with a rhombus sandwiched between two symmetric wedges. The reproducibility is investigated by changing the number of rhombuses. A device with a silicon nanowire is constructed on a highly doped silicon-on-insulator wafer to measure the electronic transport characteristics. Significant nonlinear behavior of current-voltage curves is observed at up to 150 K. The dependence of current on the drain voltage and back-gate voltage shows Coulomb blockade oscillations at 5.4 K, revealing a Coulomb island naturally formed in the nanowire. The mechanism of formation of the Coulomb island is discussed.

  14. Problems of Chernobyl exclusion zone

    1996-01-01

    The collection comprises the results of researches and design activity in the ChNPP exclusion zone with the aim to develop technology, equipment and instruments for RAW management and accident clean-up, studying of the composition and structure of the activity solid bearers in the soil of the exclusion zone and transformation of the radionuclides in the nearest zone of ChNPP. Much attention is paid to medical and biological problems of the accident influence on the flora, fauna and people's health, labour conditions and incidence of the people involved. The collection comprises the information for scientists, experts, postgraduates and students in gaged in ecology, radioecology, nuclear engineering, radiology, radiochemistry and radiobiology

  15. The Development of High-Density Vertical Silicon Nanowires and Their Application in a Heterojunction Diode

    Wen-Chung Chang

    2016-06-01

    Full Text Available Vertically aligned p-type silicon nanowire (SiNW arrays were fabricated through metal-assisted chemical etching (MACE of Si wafers. An indium tin oxide/indium zinc oxide/silicon nanowire (ITO/IZO/SiNW heterojunction diode was formed by depositing ITO and IZO thin films on the vertically aligned SiNW arrays. The structural and electrical properties of the resulting ITO/IZO/SiNW heterojunction diode were characterized by field emission scanning electron microscopy (FE-SEM, X-ray diffraction (XRD, and current−voltage (I−V measurements. Nonlinear and rectifying I−V properties confirmed that a heterojunction diode was successfully formed in the ITO/IZO/SiNW structure. The diode had a well-defined rectifying behavior, with a rectification ratio of 550.7 at 3 V and a turn-on voltage of 2.53 V under dark conditions.

  16. Exclusive photoreactions on light nuclei

    Maruyama, K.

    1989-08-01

    The mechanism of photon absorption on light nuclei in the Δ-resonance region is discussed. The present status of experimental results is briefly summarized. A recent data from 1.3-GeV Tokyo ES using a π sr spectrometer is introduced. Exclusive measurements of the photodisintegration of 3 He and 4 He may be a clear way to identify 2N, 3N and 4N absorptions. (author)

  17. Gender, Marginalisation and Social Exclusion

    D. Munk, Martin

    The paper is focused on the fact that marginalisation and social exclusion are gender-related in the EU. Even when boys and girls experience the same kinds of strain and social inheritance, they react socially different. Likewise women and men are marginalised in different ways. The differing...... access to the five ressources: cultural, financial, mental, social and powerrelated resources is highlighted. It is demonstrated how gender involves living in different realities, and requires different solutions to create equal possibilities....

  18. Ultraviolet photosensors fabricated with Ag nanowires coated with ZnO nanoparticles

    Shen, Guan-Hung [Department of Chemical Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Hong, Franklin Chau-Nan, E-mail: hong@mail.ncku.edu.tw [Department of Chemical Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 70101, Taiwan (China); NCKU Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 70101, Taiwan (China)

    2014-11-03

    We have developed a simple low temperature process to coat zinc oxide (ZnO) nanoparticles (NPs) on Ag nanowires (NWs) with well-controlled morphology. Triethanolamine (TEA) was employed to react with zinc acetate (Zn(CH{sub 3}COO){sub 2}) forming ZnO NPs. TEA was also found to enhance the nucleation and binding of ZnO NPs on the Ag nanowire surfaces facilitating a complete coverage of Ag nanowire surfaces with ZnO NPs. The effects of the process parameters including reaction time and reaction temperature were studied. The surfaces of 60 nm diameter Ag NWs could be completely covered with ZnO NPs with the final diameters of Ag-NWs@ZnO (core–shell NWs) turning into the range from 100 nm to 450 nm. The Ag-NWs@ZnO was characterized by scanning electron microscopy, transmission electron microscopy, energy-dispersive X-ray mapping analysis, X-ray diffraction, and photoluminescence spectra. Finally, ultraviolet (UV) photosensors were fabricated using Ag-NWs@ZnO. They were found to improve photosensitivity with greatly enhanced fast response by reducing the recovery time by 2 orders, in comparison with the UV-sensors using single-crystalline ZnO NWs. - Highlights: • Solution process to coat ZnO nanoparticles on Ag nanowires has been developed. • Ultraviolet photosensing of ZnO nanoparticles coated on the Ag nanowires was found. • High defect concentration of ZnO nanoparticles enhanced the photosensing properties.

  19. Growth of ZnO nanowires on polypropylene membrane surface—Characterization and reactivity

    Bojarska, Marta, E-mail: m.bojarska@ichip.pw.edu.pl [Warsaw University of Technology, Faculty of Chemical and Process Engineering, Waryńskiego 1, 00-645 Warsaw (Poland); Lehrstuhl für Technische Chemie II, Universität Duisburg-Essen, Essen 45117 (Germany); Nowak, Bartosz, E-mail: novakbartosz@gmail.com [Warsaw University of Technology, Faculty of Chemical and Process Engineering, Waryńskiego 1, 00-645 Warsaw (Poland); Skowroński, Jarosław, E-mail: jaroslaw.skowronski@itee.radom.pl [Institute for Sustainable Technologies—National Research Institute, Pułaskiego 6/10, 26-600 Radom (Poland); Piątkiewicz, Wojciech, E-mail: w.piatkiewicz@polymemtech.com [Institute for Sustainable Technologies—National Research Institute, Pułaskiego 6/10, 26-600 Radom (Poland); PolymemTech Sp. z o.o., al. Niepodległości 118/90, 02-577 Warsaw (Poland); Gradoń, Leon, E-mail: l.gradon@ichip.pw.edu.pl [Warsaw University of Technology, Faculty of Chemical and Process Engineering, Waryńskiego 1, 00-645 Warsaw (Poland)

    2017-01-01

    Highlights: • ZnO nanowires were grown on a polypropylene microfiltration capillary membrane. • Plasma treatment was used for membrane activation and hydrophilization. • The photocatalytic/antibacterial properties were studied upon light irradiation. • PP/ZnO nanowires membrane show good photocatalytic and antibacterial activity. • We report a new method for obtaining reactive membranes with ZnO nanowires. - Abstract: Need for a new membrane is clearly visible in recent studies, mostly due to the fouling phenomenon. Authors, focused on problem of biofouling caused by microorganisms that are present in water environment. An attempt to form a new membrane with zinc oxide (ZnO) nanowires was made; where plasma treatment was used as a first step of modification followed by chemical bath deposition. Such membrane will exhibit additional reactive properties. ZnO, because of its antibacterial and photocatalytic properties, is more and more often used in commercial applications. The authors used SEM imaging, measurement of the contact angle, XRD and the FT–IR analysis for membrane characterization. Amount of ZnO deposited on membrane surface was also investigated by dithizone method. Photocatalytic properties of such membranes were examined through methylene blue and humic acid degradation in laboratory scale modules with LEDs as either: wide range white or UV light source. Antibacterial and antifouling properties of polypropylene membranes modified with ZnO nanowires were examined through a series of tests involving microorganisms: model gram-positive and −negative bacteria. The obtained results showed that it is possible to modify the membrane surface in such a way, that additional reactive properties will be given. Thus, not only did the membrane become a physical barrier, but also turned out to be a reactive one.

  20. Plasmonic engineering of metal-oxide nanowire heterojunctions in integrated nanowire rectification units

    Lin, Luchan; Zhou, Y. Norman, E-mail: liulei@tsinghua.edu.cn, E-mail: nzhou@uwaterloo.ca [Department of Mechanical Engineering, State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Centre for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario N2L 3G1 (Canada); Zou, Guisheng; Liu, Lei, E-mail: liulei@tsinghua.edu.cn, E-mail: nzhou@uwaterloo.ca [Department of Mechanical Engineering, State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Duley, Walt W. [Centre for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario N2L 3G1 (Canada); Department of Physics and Astronomy, University of Waterloo, Waterloo, Ontario N2L 3G1 (Canada)

    2016-05-16

    We show that irradiation with femtosecond laser pulses can produce robust nanowire heterojunctions in coupled non-wetting metal-oxide Ag-TiO{sub 2} structures. Simulations indicate that joining arises from the effect of strong plasmonic localization in the region of the junction. Strong electric field effects occur in both Ag and TiO{sub 2} resulting in the modification of both surfaces and an increase in wettability of TiO{sub 2}, facilitating the interconnection of Ag and TiO{sub 2} nanowires. Irradiation leads to the creation of a thin layer of highly defected TiO{sub 2} in the contact region between the Ag and TiO{sub 2} nanowires. The presence of this layer allows the formation of a heterojunction and offers the possibility of engineering the electronic characteristics of interfacial structures. Rectifying junctions with single and bipolar properties have been generated in Ag-TiO{sub 2} nanowire circuits incorporating asymmetrical and symmetrical interfacial structures, respectively. This fabrication technique should be applicable for the interconnection of other heterogeneous metal-oxide nanowire components and demonstrates that femtosecond laser irradiation enables interfacial engineering for electronic applications of integrated nanowire structures.

  1. Synthesis of uniform CdS nanowires in high yield and its single nanowire electrical property

    Yan Shancheng; Sun Litao; Qu Peng; Huang Ninping; Song Yinchen; Xiao Zhongdang

    2009-01-01

    Large-scale high quality CdS nanowires with uniform diameter were synthesized by using a rapid and simple solvothermal route. Field emission scan electron microscopy (FESEM) and transmission electron microscopy (TEM) images show that the CdS nanowires have diameter of about 26 nm and length up to several micrometres. High resolution TEM (HRTEM) study indicates the single-crystalline nature of CdS nanowires with an oriented growth along the c-axis direction. The optical properties of the products were characterized by UV-vis absorption spectra, photoluminescence spectra and Raman spectra. The resistivity, electron concentration and electron mobility of single NW are calculated by fitting the symmetric I-V curves measured on single NW by the metal-semiconductor-metal model based on thermionic field emission theory. - Graphical abstract: Large-scale high quality CdS nanowires (NWs) with uniform diameter were synthesized by using a rapid and simple solvothermal route. The reaction time is reduced to 2 h, comparing to other synthesis which needed long reaction time up to 12 h. In addition, the as-prepared CdS nanowires have more uniform diameter and high yield. More importantly, the I-V curve of present single CdS nanowire has a good symmetric characteristic as expected by the theory.

  2. Study of spin dynamics and damping on the magnetic nanowire arrays with various nanowire widths

    Cho, Jaehun [Department of Physics, Inha University, Incheon, 402-751 (Korea, Republic of); Fujii, Yuya; Konioshi, Katsunori [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan); Yoon, Jungbum [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Kim, Nam-Hui; Jung, Jinyong [Department of Physics, Inha University, Incheon, 402-751 (Korea, Republic of); Miwa, Shinji [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan); Jung, Myung-Hwa [Department of Physics, Sogang University, Seoul, 121-742 (Korea, Republic of); Suzuki, Yoshishige [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan); You, Chun-Yeol, E-mail: cyyou@inha.ac.kr [Department of Physics, Inha University, Incheon, 402-751 (Korea, Republic of)

    2016-07-01

    We investigate the spin dynamics including Gilbert damping in the ferromagnetic nanowire arrays. We have measured the ferromagnetic resonance of ferromagnetic nanowire arrays using vector-network analyzer ferromagnetic resonance (VNA-FMR) and analyzed the results with the micromagnetic simulations. We find excellent agreement between the experimental VNA-FMR spectra and micromagnetic simulations result for various applied magnetic fields. We find that the same tendency of the demagnetization factor for longitudinal and transverse conditions, N{sub z} (N{sub y}) increases (decreases) as increasing the nanowire width in the micromagnetic simulations while N{sub x} is almost zero value in transverse case. We also find that the Gilbert damping constant increases from 0.018 to 0.051 as the increasing nanowire width for the transverse case, while it is almost constant as 0.021 for the longitudinal case. - Highlights: • We investigate the spin dynamic properties in the ferromagnetic nanowire arrays. • The demagnetization factors have similar tendency with the prism geometry results. • The Gilbert damping constant is increased from 0.018 to 0.051 as the increasing nanowire width for the transverse. • The Gilbert damping constant is almost constant as 0.021 for the longitudinal case.

  3. Plasmonic engineering of metal-oxide nanowire heterojunctions in integrated nanowire rectification units

    Lin, Luchan; Zou, Guisheng; Liu, Lei; Duley, Walt W.; Zhou, Y. Norman

    2016-05-01

    We show that irradiation with femtosecond laser pulses can produce robust nanowire heterojunctions in coupled non-wetting metal-oxide Ag-TiO2 structures. Simulations indicate that joining arises from the effect of strong plasmonic localization in the region of the junction. Strong electric field effects occur in both Ag and TiO2 resulting in the modification of both surfaces and an increase in wettability of TiO2, facilitating the interconnection of Ag and TiO2 nanowires. Irradiation leads to the creation of a thin layer of highly defected TiO2 in the contact region between the Ag and TiO2 nanowires. The presence of this layer allows the formation of a heterojunction and offers the possibility of engineering the electronic characteristics of interfacial structures. Rectifying junctions with single and bipolar properties have been generated in Ag-TiO2 nanowire circuits incorporating asymmetrical and symmetrical interfacial structures, respectively. This fabrication technique should be applicable for the interconnection of other heterogeneous metal-oxide nanowire components and demonstrates that femtosecond laser irradiation enables interfacial engineering for electronic applications of integrated nanowire structures.

  4. Social exclusion, health and hidden homelessness.

    Watson, J; Crawley, J; Kane, D

    2016-10-01

    Homelessness and poverty are extreme forms of social exclusion which extend beyond the lack of physical or material needs. The purpose of this study was to explore and expand the concept of social exclusion within the social determinants of health perspective - to understand how the social environment, health behaviours and health status are associated with material and social deprivation. Fundamental qualitative description with tones of focused ethnography. Participants who identified as hidden homeless described their everyday living conditions and how these everyday conditions were impacted and influenced by their social environments, coping/health behaviours and current health status. Research Ethics Board approval was granted and informed consents were obtained from 21 participants prior to the completion of individual interviews. Qualitative content analysis examined the descriptions of men and women experiencing hidden homelessness. Participants described the 'lack of quality social interactions and supports' and their 'daily struggles of street life'. They also shared the 'pain of addiction' and how coping strategies influenced health. Participants were hopeful that their insights would 'better the health of homeless people' by helping shape public policy and funding of community resources that would reduce barriers and improve overall health. Health professionals who understand health behaviours as coping mechanisms for poor quality social environments can provide more comprehensive and holistic care. The findings of this study can be used to support the importance of housing as a key factor in the health and well-being of people experiencing poverty, homelessness and social exclusion; and consequently, reinforces the need for a national housing strategy. Copyright © 2016 The Royal Society for Public Health. Published by Elsevier Ltd. All rights reserved.

  5. Synthesis and structural property of Si nanosheets connected to Si nanowires using MnCl{sub 2}/Si powder source

    Meng, Erchao [Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan); Ueki, Akiko [Toyota Central R& D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan); Meng, Xiang [Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan); Suzuki, Hiroaki [Graduate School of Engineering, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan); Itahara, Hiroshi [Toyota Central R& D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan); Tatsuoka, Hirokazu, E-mail: tatsuoka.hirokazu@shizuoka.ac.jp [Graduate School of Integrated Science and Technology, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan)

    2016-08-15

    Graphical abstract: Si nanosheets connected to Si nanowires synthesized using a MnCl{sub 2}/Si powder source with an Au catalyst avoid the use of air-sensitive SiH{sub 4} or SiCl{sub 4}. It was evident from these structural features of the nanosheets (leaf blade) with nanowires (petiole) that the nanosheets were formed by the twin-plane reentrant-edge mechanism. The feature of the observed lattice fringes of the Si(111) nanosheets was clearly explained by the interference with the extra diffraction spots that arose due to the reciprocal lattice streaking effect. - Highlights: • New Si nanosheets connected to Si nanowires were synthesized using MnCl{sub 2}/Si powders. • The synthesis method has benefits in terms of avoiding air sensitive SiH{sub 4} or SiCl{sub 4}. • Structural property and electron diffraction of the Si nanosheets were clarified. • Odd lattice fringes of the Si nanosheets observed by HRTEM were clearly explained. - Abstract: Si nanosheets connected to Si nanowires were synthesized using a MnCl{sub 2}/Si powder source with an Au catalyst. The synthesis method has benefits in terms of avoiding conventionally used air-sensitive SiH{sub 4} or SiCl{sub 4}. The existence of the Si nanosheets connected to the Si<111> nanowires, like sprouts or leaves with petioles, was observed, and the surface of the nanosheets was Si{111}. The nanosheets were grown in the growth direction of <211> perpendicular to that of the Si nanowires. It was evident from these structural features of the nanosheets that the nanosheets were formed by the twin-plane reentrant-edge mechanism. The feature of the observed lattice fringes, which do not appear for Si bulk crystals, of the Si(111) nanosheets obtained by high resolution transmission electron microscopy was clearly explained due to the extra diffraction spots that arose by the reciprocal lattice streaking effect.

  6. Fabrication of Two-Dimensional Arrays of Diameter-Tunable PS-b-P2VP Nanowires at the Air/Water Interface.

    Zhao, Xingjuan; Yu, Xiaoli; Lee, Yong-Ill; Liu, Hong-Guo

    2016-11-15

    Composite thin films with well-defined and parallel nanowires were fabricated from the binary blends of a diblock copolymer polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP) and several homopolystyrenes (h-PSs) at the air/liquid interface through a facile technique, which involves solution self-assembly, interface adsorption, and further self-organization processes. It was confirmed that the nanowires that appeared at the air/water interface came from the cylindrical micelles formed in solution. Interestingly, the diameters of the nanowires are uniform and can be tuned precisely from 45 to 247 nm by incorporating the h-PS molecules into the micellar core. This parallel alignment of the nanowires has potential applications in optical devices and enables the nanowires to be used as templates to prepare functional nanostructures. The extent to which h-PS molecules with different molecular weights are able to influence the diameter control of the nanowires was also systematically investigated.

  7. Molecular motor transport through hollow nanowires

    Lard, Mercy; Ten Siethoff, Lasse; Generosi, Johanna

    2014-01-01

    -driven motion of fluorescent probes (actin filaments) through 80 nm wide, Al2O 3 hollow nanowires of micrometer length. The motor-driven transport is orders of magnitude faster than would be possible by passive diffusion. The system represents a necessary element for advanced devices based on gliding assays...

  8. Synthesis and characterization of silver molybdate nanowires ...

    Wintec

    UV-visible spectrum of silver molybdate nanorods/nanowires shows maximum absorbance at 408 nm. Photo- .... trometer using Xe lamp with an excitation wavelength of. 330 nm. 3. ... ment of (NH4)6Mo7O24 with AgNO3 led to the formation.

  9. Doping assessment in GaAs nanowires

    Goktas, N. Isik; Fiordaliso, Elisabetta Maria; LaPierre, R. R.

    2018-01-01

    Semiconductor nanowires (NWs) are a candidate technology for future optoelectronic devices. One of the critical issues in NWs is the control of impurity doping for the formation of p-n junctions. In this study, beryllium (p-type dopant) and tellurium (n-type dopant) in self-assisted GaAs NWs...

  10. Broadband Nonlinear Signal Processing in Silicon Nanowires

    Yvind, Kresten; Pu, Minhao; Hvam, Jørn Märcher

    The fast non-linearity of silicon allows Tbit/s optical signal processing. By choosing suitable dimensions of silicon nanowires their dispersion can be tailored to ensure a high nonlinearity at power levels low enough to avoid significant two-photon abso We have fabricated low insertion...

  11. Printing nanotube/nanowire for flexible microsystems

    Tortorich, Ryan P.; Choi, Jin-Woo

    2014-04-01

    Printing has become an emerging manufacturing technology for mechanics, electronics, and consumer products. Additionally, both nanotubes and nanowires have recently been used as materials for sensors and electrodes due to their unique electrical and mechanical properties. Printed electrodes and conductive traces particularly offer versatility of fabricating low-cost, disposable, and flexible electrical devices and microsystems. While various printing methods such as screen printing have been conventional methods for printing conductive traces and electrodes, inkjet printing has recently attracted great attention due to its unique advantages including no template requirement, rapid printing at low cost, on-demand printing capability, and precise control of the printed material. Computer generated conductive traces or electrode patterns can simply be printed on a thin film substrate with proper conductive ink consisting of nanotubes or nanowires. However, in order to develop nanotube or nanowire ink, there are a few challenges that need to be addressed. The most difficult obstacle to overcome is that of nanotube/nanowire dispersion within a solution. Other challenges include adjusting surface tension and controlling viscosity of the ink as well as treating the surface of the printing substrate. In an attempt to pave the way for nanomaterial inkjet printing, we present a method for preparing carbon nanotube ink as well as its printing technique. A fully printed electrochemical sensor using inkjet-printed carbon nanotube electrodes is also demonstrated as an example of the possibilities for this technology.

  12. Lasing in nanowires: Ab initio semiclassical model

    Bordo, Vladimir

    2013-01-01

    The semiclassical equations which describe lasing in nanowires are derived from first principles. Both the lasing threshold condition and the steady-state regime of operation are discussed. It is shown that the lasing is governed by the Fourier coefficients of the field susceptibility averaged ov...

  13. Ab initio vibrations in nonequilibrium nanowires

    Jauho, Antti-Pekka; Engelund, Mads; Markussen, T

    2010-01-01

    We review recent results on electronic and thermal transport in two different quasi one-dimensional systems: Silicon nanowires (SiNW) and atomic gold chains. For SiNW's we compute the ballistic electronic and thermal transport properties on equal footing, allowing us to make quantitative predicti...

  14. In Situ TEM Creation of Nanowire Devices

    Alam, Sardar Bilal

    Integration of silicon nanowires (SiNWs) as active components in devices requires that desired mechanical, thermal and electrical interfaces can be established between the nanoscale geometry of the SiNW and the microscale architecture of the device. In situ transmission electron microscopy (TEM),...

  15. Direct observation of nanowire growth and decomposition

    Rackauskas, Simas; Shandakov, Sergey D; Jiang, Hua

    2017-01-01

    knowledge, so far this has been only postulated, but never observed at the atomic level. By means of in situ environmental transmission electron microscopy we monitored and examined the atomic layer transformation at the conditions of the crystal growth and its decomposition using CuO nanowires selected...

  16. Silicon Nanowire Field-effect Chemical Sensor

    Chen, S.

    2011-01-01

    This thesis describes the work that has been done on the project “Design and optimization of silicon nanowire for chemical sensing‿, including Si-NW fabrication, electrical/electrochemical modeling, the application as ISFET, and the build-up of Si- NW/LOC system for automatic sample delivery. A

  17. Optical Properties of Strained Wurtzite Gallium Phosphide Nanowires

    Greil, J.

    2016-06-08

    Wurtzite gallium phosphide (WZ GaP) has been predicted to exhibit a direct bandgap in the green spectral range. Optical transitions, however, are only weakly allowed by the symmetry of the bands. While efficient luminescence has been experimentally shown, the nature of the transitions is not yet clear. Here we apply tensile strain up to 6% and investigate the evolution of the photoluminescence (PL) spectrum of WZ GaP nanowires (NWs). The pressure and polarization dependence of the emission together with a theoretical analysis of strain effects is employed to establish the nature and symmetry of the transitions. We identify the emission lines to be related to localized states with significant admixture of Γ7c symmetry and not exclusively related to the Γ8c conduction band minimum (CBM). The results emphasize the importance of strongly bound state-related emission in the pseudodirect semiconductor WZ GaP and contribute significantly to the understanding of the optoelectronic properties of this novel material.

  18. Inkjet printing and electrical characterisation of DNA-templated cadmium sulphide nanowires

    Nurdillayeva, R. N.; Oshido, A. B.; Bamford, T. A.; El-Zubir, O.; Houlton, A.; Hedley, J.; Pike, A. R.; Horrocks, B. R.

    2018-04-01

    Cadmium sulphide can be templated on λ-DNA molecules to form an aqueous dispersion of CdS/λ-DNA nanowires. Subsequent addition of ethylene glycol to 50% v/v is sufficient to formulate an ink suitable for printing using piezoelectric drop-on-demand technology. Printed droplet arrays show a coffee-ring morphology of individual deposits by fluorescence and Raman microscopy, but upon increasing the number of layers of printed material by repeated printing over each droplet, the dry deposit approaches closer to a disc shape. It is also possible to print parallel tracks by reducing the droplet separation in the array until neighbouring droplets overlap before they dry. The droplets coalesce to form a strip of width roughly equal to the diameter of the droplets. Evaporation-driven capillary flow sends the nanowires to the edges of the strip and when dry they form parallel tracks of CdS/λ-DNA nanowire bundles. Both droplets and tracks were printed onto Pt-on-glass interdigitated microelectrodes (10 μm width, 10 μm gap). The current-voltage characteristics of these two-terminal devices were approximately ohmic, but with some hysteresis. The conductance increased with temperature as a simple activated process with activation energies of 0.57 ± 0.02 eV (tracks) and 0.39 ± 0.02 eV (droplets). The impedance spectra of the printed films were consistent with hopping between CdS grains.

  19. Preparation and Use of Photocatalytically Active Segmented Ag|ZnO and Coaxial TiO2-Ag Nanowires Made by Templated Electrodeposition

    Maijenburg, A. Wouter; Rodijk, Eddy J.B.; Maas, Michiel G.; ten Elshof, Johan E.

    2014-01-01

    Photocatalytically active nanostructures require a large specific surface area with the presence of many catalytically active sites for the oxidation and reduction half reactions, and fast electron (hole) diffusion and charge separation. Nanowires present suitable architectures to meet these requirements. Axially segmented Ag|ZnO and radially segmented (coaxial) TiO2-Ag nanowires with a diameter of 200 nm and a length of 6-20 µm were made by templated electrodeposition within the pores of polycarbonate track-etched (PCTE) or anodized aluminum oxide (AAO) membranes, respectively. In the photocatalytic experiments, the ZnO and TiO2 phases acted as photoanodes, and Ag as cathode. No external circuit is needed to connect both electrodes, which is a key advantage over conventional photo-electrochemical cells. For making segmented Ag|ZnO nanowires, the Ag salt electrolyte was replaced after formation of the Ag segment to form a ZnO segment attached to the Ag segment. For making coaxial TiO2-Ag nanowires, a TiO2 gel was first formed by the electrochemically induced sol-gel method. Drying and thermal annealing of the as-formed TiO2 gel resulted in the formation of crystalline TiO2 nanotubes. A subsequent Ag electrodeposition step inside the TiO2 nanotubes resulted in formation of coaxial TiO2-Ag nanowires. Due to the combination of an n-type semiconductor (ZnO or TiO2) and a metal (Ag) within the same nanowire, a Schottky barrier was created at the interface between the phases. To demonstrate the photocatalytic activity of these nanowires, the Ag|ZnO nanowires were used in a photocatalytic experiment in which H2 gas was detected upon UV illumination of the nanowires dispersed in a methanol/water mixture. After 17 min of illumination, approximately 0.2 vol% H2 gas was detected from a suspension of ~0.1 g of Ag|ZnO nanowires in a 50 ml 80 vol% aqueous methanol solution. PMID:24837535

  20. Non-stationary probabilities for the asymmetric exclusion process

    A solution of the master equation for a system of interacting particles for finite time and particle density is presented. By using a new form of the Bethe ansatz, the totally asymmetric exclusion process on a ring is solved for arbitrary initial conditions and time intervals.

  1. Quantum suppression of superconductivity in nanowires

    Bezryadin, Alexey

    2008-01-01

    It is of fundamental importance to establish whether there is a limit to how thin a superconducting wire can be, while retaining its superconducting character-and if there is such limit, to understand what determines it. This issue may be of practical importance in defining the limit to miniaturization of superconducting electronic circuits. Recently, a new fabrication method, called molecular templating, was developed and used to answer such questions. In this approach, a suspended carbon nanotube is coated with a thin superconducting metal film, thus forming a superconducting nanowire. The wire obtained is automatically attached to the two leads formed by the sides of the trench. The usual material for such wires is the amorphous alloy of MoGe (Graybeal 1985 PhD Thesis Stanford University; Graybeal and Beasley 1984 Phys. Rev. B 29 4167; Yazdani and Kapitulnik 1995 Phys. Rev. Lett. 74 3037; Turneaure et al 2000 Phys. Rev. Lett. 84 987). Such wires typically exhibit a high degree of homogeneity and can be made very small: as thin as ∼5 nm in diameter and as short as ∼40 nm in length. The results of transport measurements on such homogeneous wires can be summarized as follows. Short wires, shorter than some empirical length, ∼200 nm for MoGe, exhibit a clear dichotomy. They show either a superconducting behavior, with the resistance controlled by thermal fluctuations, or a weakly insulating behavior, with the resistance controlled by the weak Coulomb blockade. Thus a quantum superconductor-insulator transition (SIT) is indicated. Longer wires exhibit a gradual crossover behavior, from almost perfectly superconducting to normal or weakly insulating behavior, as their diameter is reduced. Measurements of wires, which are made inhomogeneous (granular) on purpose, show that such wires, even if they are short in the sense stated above, do not show a clear dichotomy, which could be identified as an SIT (Bollinger et al 2004 Phys. Rev. B 69 180503(R)). Thus

  2. Factors influencing knowledge and practice of exclusive ...

    Factors influencing knowledge and practice of exclusive breastfeeding in Nyando ... The overall objective of this study was to determine factors influencing the ... EBF and its benefits), pre lacteal feeds and exclusive breastfeeding consistency.

  3. Electroless Fabrication of Cobalt Alloys Nanowires within Alumina Template

    Nazila Dadvand

    2007-01-01

    Full Text Available A new method of nanowire fabrication based on electroless deposition process is described. The method is novel compared to the current electroless procedure used in making nanowires as it involves growing nanowires from the bottom up. The length of the nanowires was controlled at will simply by adjusting the deposition time. The nanowires were fabricated within the nanopores of an alumina template. It was accomplished by coating one side of the template by a thin layer of palladium in order to activate the electroless deposition within the nanopores from bottom up. However, prior to electroless deposition process, the template was pretreated with a suitable wetting agent in order to facilitate the penetration of the plating solution through the pores. As well, the electroless deposition process combined with oblique metal evaporation process within a prestructured silicon wafer was used in order to fabricate long nanowires along one side of the grooves within the wafer.

  4. Electrodeposited highly-ordered manganese oxide nanowire arrays for supercapacitors

    Liu, Haifeng; Lu, Bingqiang; Wei, Shuiqiang; Bao, Mi; Wen, Yanxuan; Wang, Fan

    2012-07-01

    Large arrays of well-aligned Mn oxide nanowires were prepared by electrodeposition using anodic aluminum oxide templates. The sizes of nanowires were tuned by varying the electrotype solution involved and the MnO2 nanowires with 10 μm in length were obtained in a neutral KMnO4 bath for 1 h. MnO2 nanowire arrays grown on conductor substance save the tedious electrode-making process, and electrochemical characterization demonstrates that the MnO2 nanowire arrays electrode has good capacitive behavior. Due to the limited mass transportation in narrow spacing, the spacing effects between the neighbor nanowires have show great influence to the electrochemical performance.

  5. Synthesis and electrical characterization of tungsten oxide nanowires

    Huang Rui; Zhu Jing; Yu Rong

    2009-01-01

    Tungsten oxide nanowires of diameters ranging from 7 to 200 nm are prepared on a tungsten rod substrate by using the chemical vapour deposition (CVD) method with vapour-solid (VS) mechanism. Tin powders are used to control oxygen concentration in the furnace, thereby assisting the growth of the tungsten oxide nanowires. The grown tungsten oxide nanowires are determined to be of crystalline W18O49. Ⅰ-Ⅴ curves are measured by an in situ transmission electron microscope (TEM) to investigate the electrical properties of the nanowires. All of the Ⅰ-Ⅴ curves observed are symmetric, which reveals that the tungsten oxide nanowires are semiconducting. Quantitative analyses of the experimental I V curves by using a metal-semiconductor-metal (MSM) model give some intrinsic parameters of the tungsten oxide nanowires, such as the carrier concentration, the carrier mobility and the conductivity.

  6. Increasing the efficiency of polymer solar cells by silicon nanowires

    Eisenhawer, B; Sivakov, V; Pietsch, M; Andrae, G; Falk, F [Institute of Photonic Technology, Albert-Einstein-Strasse 9, 07743 Jena (Germany); Sensfuss, S, E-mail: bjoern.eisenhawer@ipht-jena.de [Thuringian Institute for Textile and Plastics Research, Breitscheidstrasse 97, 07407 Rudolstadt (Germany)

    2011-08-05

    Silicon nanowires have been introduced into P3HT:[60]PCBM solar cells, resulting in hybrid organic/inorganic solar cells. A cell efficiency of 4.2% has been achieved, which is a relative improvement of 10% compared to a reference cell produced without nanowires. This increase in cell performance is possibly due to an enhancement of the electron transport properties imposed by the silicon nanowires. In this paper, we present a novel approach for introducing the nanowires by mixing them into the polymer blend and subsequently coating the polymer/nanowire blend onto a substrate. This new onset may represent a viable pathway to producing nanowire-enhanced polymer solar cells in a reel to reel process.

  7. Increasing the efficiency of polymer solar cells by silicon nanowires

    Eisenhawer, B; Sivakov, V; Pietsch, M; Andrae, G; Falk, F; Sensfuss, S

    2011-01-01

    Silicon nanowires have been introduced into P3HT:[60]PCBM solar cells, resulting in hybrid organic/inorganic solar cells. A cell efficiency of 4.2% has been achieved, which is a relative improvement of 10% compared to a reference cell produced without nanowires. This increase in cell performance is possibly due to an enhancement of the electron transport properties imposed by the silicon nanowires. In this paper, we present a novel approach for introducing the nanowires by mixing them into the polymer blend and subsequently coating the polymer/nanowire blend onto a substrate. This new onset may represent a viable pathway to producing nanowire-enhanced polymer solar cells in a reel to reel process.

  8. Pd nanowire arrays as electrocatalysts for ethanol electrooxidation

    Wang, Hong; Cheng, Faliang [Dongguan University of Technology, Dongguan 523106 (China); Xu, Changwei; Jiang, Sanping [School of Mechanical and Aerospace Engineering, Nanyang Technological University, Singapore 639798 (Singapore)

    2007-05-15

    Highly ordered Pd nanowire arrays were prepared by template-electrodeposition method using anodic aluminum oxide template. The Pd nanowire arrays, in this paper, have high electrochemical active surface and show excellent catalytic properties for ethanol electrooxidation in alkaline media. The activity of Pd nanowire arrays for ethanol oxidation is not only higher that of Pd film, but also higher than that of commercial E-TEK PtRu(2:1 by weight)/C. The micrometer sized pores and channels in nanowire arrays act as structure units. They make liquid fuel diffuse into and products diffuse out of the catalysts layer much easier, therefore, the utilization efficiency of catalysts gets higher. Pd nanowire arrays are stable catalysts for ethanol oxidation. The nanowire arrays may be a great potential in direct ethanol fuel cells and ethanol sensors. (author)

  9. Electrochemical synthesis of CORE-shell magnetic nanowires

    Ovejero, Jesús G.

    2015-04-16

    (Fe, Ni, CoFe) @ Au core-shell magnetic nanowires have been synthesized by optimized two-step potentiostatic electrodeposition inside self-assembled nanopores of anodic aluminium templates. The optimal electrochemical parameters (e.g., potential) have been firstly determined for the growth of continuous Au nanotubes at the inner wall of pores. Then, a magnetic core was synthesized inside the Au shells under suitable electrochemical conditions for a wide spectrum of single elements and alloy compositions (e.g., Fe, Ni and CoFe alloys). Novel opportunities offered by such nanowires are discussed particularly the magnetic behavior of (Fe, Ni, CoFe) @ Au core-shell nanowires was tested and compared with that of bare TM nanowires. These core-shell nanowires can be released from the template so, opening novel opportunities for biofunctionalization of individual nanowires.

  10. On the thermomechanical deformation of silver shape memory nanowires

    Park, Harold S.; Ji, Changjiang

    2006-01-01

    We present an analysis of the uniaxial thermomechanical deformation of single-crystal silver shape memory nanowires using atomistic simulations. We first demonstrate that silver nanowires can show both shape memory and pseudoelastic behavior, then perform uniaxial tensile loading of the shape memory nanowires at various deformation temperatures, strain rates and heat transfer conditions. The simulations show that the resulting mechanical response of the shape memory nanowires depends strongly upon the temperature during deformation, and can be fundamentally different from that observed in bulk polycrystalline shape memory alloys. The energy and temperature signatures of uniaxially loaded silver shape memory nanowires are correlated to the observed nanowire deformation, and are further discussed in comparison to bulk polycrystalline shape memory alloy behavior

  11. Synthetic Strategies and Applications of GaN Nanowires

    Guoquan Suo

    2014-01-01

    Full Text Available GaN is an important III-V semiconductor material with a direct band gap of 3.4 eV at 300 K. The wide direct band gap makes GaN an attractive material for various applications. GaN nanowires have demonstrated significant potential as fundamental building blocks for nanoelectronic and nanophotonic devices and also offer substantial promise for integrated nanosystems. In this paper, we provide a comprehensive review on the general synthetic strategies, characterizations, and applications of GaN nanowires. We first summarize several growth techniques of GaN nanowires. Subsequently, we discuss mechanisms involved to generate GaN nanowires from different synthetic schemes and conditions. Then we review some characterization methods of GaN nanowires. Finally, several kinds of main applications of GaN nanowires are discussed.

  12. Tartrazine exclusion for allergic asthma.

    Ardern, K D; Ram, F S

    2001-01-01

    Tartrazine is the best known and one of the most commonly used food additives. Food colorants are also used in many medications as well as foods. There has been conflicting evidence as to whether tartrazine causes exacerbations of asthma with some studies finding a positive association especially in individuals with cross-sensitivity to aspirin. To assess the overall effect of tartrazine (exclusion or challenge) in the management of asthma. A search was carried out using the Cochrane Airways Group specialised register. Bibliographies of each RCT was searched for additional papers. Authors of identified RCTs were contacted for further information for their trials and details of other studies. RCTs of oral administration of tartrazine (as a challenge) versus placebo or dietary avoidance of tartrazine versus normal diet were considered. Studies which focused upon allergic asthma, were also included. Studies of tartrazine exclusion for other allergic conditions such as hay fever, allergic rhinitis and eczema were only considered if the results for subjects with asthma were separately identified. Trials could be in either adults or children with asthma or allergic asthma (e.g. sensitivity to aspirin or food items known to contain tartrazine). Study quality was assessed and data abstracted by two reviewers independently. Outcomes were analysed using RevMan 4.1.1. Ninety abstracts were found, of which 18 were potentially relevant. Six met the inclusion criteria, but only three presented results in a format that permitted analysis and none could be combined in a meta-analysis. In none of the studies did tartrazine challenge or avoidance in diet significantly alter asthma outcomes. Due to the paucity of available evidence, it is not possible to provide firm conclusions as to the effects of tartrazine on asthma control. However, the six RCTs that could be included in this review all arrived at the same conclusion. Routine tartrazine exclusion may not benefit most patients

  13. Exclusive electroproduction of pion pairs

    Warkentin, N.; Schaefer, A.; Diehl, M.; Ivanov, D. Yu.

    2007-01-01

    We investigate electroproduction of pion pairs on the nucleon in the framework of QCD factorization for hard exclusive processes. We extend previous analyses by taking the hard-scattering coefficients at next-to-leading order in α s . The dynamics of the produced pion pair is described by two-pion distribution amplitudes, for which we perform a detailed theoretical and phenomenological analysis. In particular, we obtain constraints on these quantities by comparing our results with measurements of angular observables that are sensitive to the interference between two-pion production in the isoscalar and isovector channels. (orig.)

  14. Exclusion Bounds for Extended Anyons

    Larson, Simon; Lundholm, Douglas

    2018-01-01

    We introduce a rigorous approach to the many-body spectral theory of extended anyons, that is quantum particles confined to two dimensions that interact via attached magnetic fluxes of finite extent. Our main results are many-body magnetic Hardy inequalities and local exclusion principles for these particles, leading to estimates for the ground-state energy of the anyon gas over the full range of the parameters. This brings out further non-trivial aspects in the dependence on the anyonic statistics parameter, and also gives improvements in the ideal (non-extended) case.

  15. InAs nanowire formation on InP(001)

    Parry, H. J.; Ashwin, M. J.; Jones, T. S.

    2006-01-01

    The heteroepitaxial growth of InAs on InP(001) by solid source molecular beam epitaxy has been studied for a range of different growth temperatures and annealing procedures. Atomic force microscopy images show that nanowires are formed for deposition in the temperature range of 400-480 deg. C, and also following high temperature annealing (480 deg. C) after deposition at 400 deg. C. The wires show preferential orientation along and often exhibit pronounced serpentine behavior due to the presence of kinks, an effect that is reduced at increasing growth temperature. The results suggest that the serpentine behavior is related to the degree of initial surface order. Kinks in the wires appear to act as nucleation centers for In adatoms migrating along the wires during annealing, leading to the coexistence of large three-dimensional islands

  16. Growth strategies to control tapering in Ge nanowires

    P. Periwal

    2014-04-01

    Full Text Available We report the effect of PH3 on the morphology of Au catalyzed Ge nanowires (NWs. Ge NWs were grown on Si (111 substrate at 400 °C in the presence of PH3, using vapor-liquid-solid method by chemical vapor deposition. We show that high PH3/GeH4 ratio causes passivation at NW surface. At high PH3 concentration phosphorous atoms attach itself on NW surface and form a self-protection coating that prevents conformal growth and leads to taper free nanostructures. However, in case of low PH3 flux the combination of axial and radial growth mechanism occurs resulting in conical structure. We have also investigated axial PH3-intrinsic junctions in Ge NWs. The unusual NW shape is attributed to a combination of catalyzed, uncatalyzed and diffusion induced growth.

  17. Regulation of Gene Expression in Shewanella oneidensis MR-1 during Electron Acceptor Limitation and Bacterial Nanowire Formation

    Barchinger, Sarah E.; Pirbadian, Sahand; Baker, Carol S.; Leung, Kar Man; Burroughs, Nigel J.; El-Naggar, Mohamed Y.

    2016-01-01

    ABSTRACT In limiting oxygen as an electron acceptor, the dissimilatory metal-reducing bacterium Shewanella oneidensis MR-1 rapidly forms nanowires, extensions of its outer membrane containing the cytochromes MtrC and OmcA needed for extracellular electron transfer. RNA sequencing (RNA-Seq) analysis was employed to determine differential gene expression over time from triplicate chemostat cultures that were limited for oxygen. We identified 465 genes with decreased expression and 677 genes with increased expression. The coordinated increased expression of heme biosynthesis, cytochrome maturation, and transport pathways indicates that S. oneidensis MR-1 increases cytochrome production, including the transcription of genes encoding MtrA, MtrC, and OmcA, and transports these decaheme cytochromes across the cytoplasmic membrane during electron acceptor limitation and nanowire formation. In contrast, the expression of the mtrA and mtrC homologs mtrF and mtrD either remains unaffected or decreases under these conditions. The ompW gene, encoding a small outer membrane porin, has 40-fold higher expression during oxygen limitation, and it is proposed that OmpW plays a role in cation transport to maintain electrical neutrality during electron transfer. The genes encoding the anaerobic respiration regulator cyclic AMP receptor protein (CRP) and the extracytoplasmic function sigma factor RpoE are among the transcription factor genes with increased expression. RpoE might function by signaling the initial response to oxygen limitation. Our results show that RpoE activates transcription from promoters upstream of mtrC and omcA. The transcriptome and mutant analyses of S. oneidensis MR-1 nanowire production are consistent with independent regulatory mechanisms for extending the outer membrane into tubular structures and for ensuring the electron transfer function of the nanowires. IMPORTANCE Shewanella oneidensis MR-1 has the capacity to transfer electrons to its external surface

  18. Hard exclusive meson production to constrain GPDs

    Wolbeek, Johannes ter; Fischer, Horst; Gorzellik, Matthias; Gross, Arne; Joerg, Philipp; Koenigsmann, Kay; Malm, Pasquale; Regali, Christopher; Schmidt, Katharina; Sirtl, Stefan; Szameitat, Tobias [Physikalisches Institut, Albert-Ludwigs-Universitaet Freiburg, Freiburg im Breisgau (Germany); Collaboration: COMPASS Collaboration

    2014-07-01

    The concept of Generalized Parton Distributions (GPDs) combines the two-dimensional spatial information, given by form factors, with the longitudinal momentum information from the PDFs. Thus, GPDs provide a three-dimensional 'tomography' of the nucleon. Furthermore, according to Ji's sum rule, the GPDs H and E enable access to the total angular momenta of quarks, antiquarks and gluons. While H can be approached using electroproduction cross section, hard exclusive meson production off a transversely polarized target can help to constrain the GPD E. At the COMPASS experiment at CERN, two periods of data taking were performed in 2007 and 2010, using a longitudinally polarized 160 GeV/c muon beam and a transversely polarized NH{sub 3} target. This talk introduces the data analysis of the process μ + p → μ' + p' + V, and recent results are presented.

  19. Superconducting Nanowires as Nonlinear Inductive Elements for Qubits

    Ku, Jaseung; Manucharyan, Vladimir; Bezryadin, Alexey

    2010-01-01

    We report microwave transmission measurements of superconducting Fabry-Perot resonators (SFPR), having a superconducting nanowire placed at a supercurrent antinode. As the plasma oscillation is excited, the supercurrent is forced to flow through the nanowire. The microwave transmission of the resonator-nanowire device shows a nonlinear resonance behavior, significantly dependent on the amplitude of the supercurrent oscillation. We show that such amplitude-dependent response is due to the nonl...

  20. Effect of Silicon Nanowire on Crystalline Silicon Solar Cell Characteristics

    Zahra Ostadmahmoodi Do; Tahereh Fanaei Sheikholeslami; Hassan Azarkish

    2016-01-01

    Nanowires (NWs) are recently used in several sensor or actuator devices to improve their ordered characteristics. Silicon nanowire (Si NW) is one of the most attractive one-dimensional nanostructures semiconductors because of its unique electrical and optical properties. In this paper, silicon nanowire (Si NW), is synthesized and characterized for application in photovoltaic device. Si NWs are prepared using wet chemical etching method which is commonly used as a simple and low cost method fo...