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Sample records for nanowire nw arrays

  1. Plasmonic Properties of Vertically Aligned Nanowire Arrays

    Hua Qi

    2012-01-01

    Full Text Available Nanowires (NWs/Ag sheath composites were produced to investigate plasmonic coupling between vertically aligned NWs for surface-enhanced Raman scattering (SERS applications. In this investigation, two types of vertical NW arrays were studied; those of ZnO NWs grown on nanosphere lithography patterned sapphire substrate via vapor-liquid-solid (VLS mechanism and Si NW arrays produced by wet chemical etching. Both types of vertical NW arrays were coated with a thin layer of silver by electroless silver plating for SERS enhancement studies. The experimental results show extremely strong SERS signals due to plasmonic coupling between the NWs, which was verified by COMSOL electric field simulations. We also compared the SERS enhancement intensity of aligned and random ZnO NWs, indicating that the aligned NWs show much stronger and repeatable SERS signal than those grown in nonaligned geometries.

  2. GaN Nanowire Arrays for High-Output Nanogenerators

    Huang, Chi-Te

    2010-04-07

    Three-fold symmetrically distributed GaN nanowire (NW) arrays have been epitaxially grown on GaN/sapphire substrates. The GaN NW possesses a triangular cross section enclosed by (0001), (2112), and (2112) planes, and the angle between the GaN NW and the substrate surface is ∼62°. The GaN NW arrays produce negative output voltage pulses when scanned by a conductive atomic force microscope in contact mode. The average of piezoelectric output voltage was about -20 mV, while 5-10% of the NWs had piezoelectric output voltages exceeding -(0.15-0.35) V. The GaN NW arrays are highly stable and highly tolerate to moisture in the atmosphere. The GaN NW arrays demonstrate an outstanding potential to be utilized for piezoelectric energy generation with a performance probably better than that of ZnO NWs. © 2010 American Chemical Society.

  3. Transparently wrap-gated semiconductor nanowire arrays for studies of gate-controlled photoluminescence

    Nylund, Gustav; Storm, Kristian; Torstensson, Henrik; Wallentin, Jesper; Borgström, Magnus T.; Hessman, Dan; Samuelson, Lars [Solid State Physics, Nanometer Structure Consortium, Lund University, Box 118, S-221 00 Lund (Sweden)

    2013-12-04

    We present a technique to measure gate-controlled photoluminescence (PL) on arrays of semiconductor nanowire (NW) capacitors using a transparent film of Indium-Tin-Oxide (ITO) wrapping around the nanowires as the gate electrode. By tuning the wrap-gate voltage, it is possible to increase the PL peak intensity of an array of undoped InP NWs by more than an order of magnitude. The fine structure of the PL spectrum reveals three subpeaks whose relative peak intensities change with gate voltage. We interpret this as gate-controlled state-filling of luminescing quantum dot segments formed by zincblende stacking faults in the mainly wurtzite NW crystal structure.

  4. Developing high coercivity in large diameter cobalt nanowire arrays

    Montazer, A. H.; Ramazani, A.; Almasi Kashi, M.; Zavašnik, J.

    2016-11-01

    Regardless of the synthetic method, developing high magnetic coercivity in ferromagnetic nanowires (NWs) with large diameters has been a challenge over the past two decades. Here, we report on the synthesis of highly coercive cobalt NW arrays with diameters of 65 and 80 nm, which are embedded in porous anodic alumina templates with high-aspect-ratio pores. Using a modified electrochemical deposition method enabled us to reach room temperature coercivity and remanent ratio up to 3000 Oe and 0.70, respectively, for highly crystalline as-synthesized hcp cobalt NW arrays with a length of 8 μm. The first-order reversal curve (FORC) analysis showed the presence of both soft and hard magnetic phases along the length of the resulting NWs. To develop higher coercive fields, the length of the NWs was then gradually reduced in order from bottom to top, thereby reaching NW sections governed by the hard phase. Consequently, this resulted in record high coercivities of 4200 and 3850 Oe at NW diameters of 65 and 80 nm, respectively. In this case, the FORC diagrams confirmed a significant reduction in interactions between the magnetic phases of the remaining sections of NWs. At this stage, x-ray diffraction (XRD) and dark-field transmission electron microscopy analyses indicated the formation of highly crystalline bamboo-like sections along the [0 0 2] direction during a progressive pulse-controlled electrochemical growth of NW arrays under optimized parameters. Our results both provide new insights into the growth process, crystalline characteristics and magnetic phases along the length of large diameter NW arrays and, furthermore, develop the performance of pure 3d transition magnetic NWs.

  5. Antibacterial activity of single crystalline silver-doped anatase TiO{sub 2} nanowire arrays

    Zhang, Xiangyu, E-mail: zhangxiangyu@tyut.edu.cn; Li, Meng; He, Xiaojing; Hang, Ruiqiang; Huang, Xiaobo; Wang, Yueyue; Yao, Xiaohong; Tang, Bin, E-mail: tangbin@tyut.edu.cn

    2016-05-30

    Graphical abstract: The silver-doped TiO{sub 2} nanowire arrays on titanium foil substrate were synthesized via a two-step process. It includes: deposition of AgTi films on titanium foil by magnetron sputtering; preparation of AgNW arrays on AgTi films via alkali (NaOH) hydrothermal treatment and ion-exchange with HCl, followed by calcinations. - Highlights: • Ag-doped TiO{sub 2} nanowire arrays have been prepared by a duplex-treatment. • The duplex-treatment consisted of magnetron sputtering and hydrothermal growth. • Ag-doped nanowire arrays show excellent antibacterial activity against E. coli. - Abstract: Well-ordered, one-dimensional silver-doped anatase TiO{sub 2} nanowire (AgNW) arrays have been prepared through a hydrothermal growth process on the sputtering-deposited AgTi layers. Electron microscope analyses reveal that the as-synthesized AgNW arrays exhibit a single crystalline phase with highly uniform morphologies, diameters ranging from 85 to 95 nm, and lengths of about 11 μm. Silver is found to be doped into TiO{sub 2} nanowire evenly and mainly exists in the zerovalent state. The AgNW arrays show excellent efficient antibacterial activity against Escherichia coli (E. coli), and all of the bacteria can be killed within 1 h. Additionally, the AgNW arrays can still kill E. coli after immersion for 60 days, suggesting the long-term antibacterial property. The technique reported here is environmental friendly for formation of silver-containing nanostructure without using any toxic organic solvents.

  6. Silver Nanowire Arrays : Fabrication and Applications

    Feng, Yuyi

    2016-01-01

    Nanowire arrays have increasingly received attention for their use in a variety of applications such as surface-enhanced Raman scattering (SERS), plasmonic sensing, and electrodes for photoelectric devices. However, until now, large scale fabrication of device-suitable metallic nanowire arrays on supporting substrates has seen very limited success. This thesis describes my work rst on the development of a novel successful processing route for the fabrication of uniform noble metallic (e.g. A...

  7. Piezoelectric Nanogenerator Using p-Type ZnO Nanowire Arrays

    Lu, Ming-Pei; Song, Jinhui; Lu, Ming-Yen; Chen, Min-Teng; Gao, Yifan; Chen, Lih-Juann; Wang, Zhong Lin

    2009-01-01

    Using phosphorus-doped ZnO nanowire (NW) arrays grown on silicon substrate, energy conversion using the p-type ZnO NWs has been demonstrated for the first time. The p-type ZnO NWs produce positive output voltage pulses when scanned by a conductive

  8. Growth of Horizonatal ZnO Nanowire Arrays on Any Substrate

    Qin, Yong; Yang, Rusen; Wang, Zhong Lin

    2008-01-01

    A general method is presented for growing laterally aligned and patterned ZnO nanowire (NW) arrays on any substrate as long as it is flat. The orientation control is achieved using the combined effect from ZnO seed layer and the catalytically

  9. Characterization of a Ga-assisted GaAs nanowire array solar cell on si substrate

    Boulanger, J. P.; Chia, A. C. E.; Wood, B.

    2016-01-01

    A single-junction core-shell GaAs nanowire (NW) solar cell on Si (1 1 1) substrates is presented. A Ga-assisted vapor–liquid–solid growth mechanism was used for the formation of a patterned array of radial p-i-n GaAs NWs encapsulated in AlInP passivation. Novel device fabrication utilizing facet-...

  10. Synthesis, structure and photoelectrochemical properties of single crystalline silicon nanowire arrays

    Dalchiele, E.A.; Martin, F.; Leinen, D.; Marotti, R.E.; Ramos-Barrado, J.R.

    2010-01-01

    In the present work, n-type silicon nanowire (n-SiNW) arrays have been synthesized by self-assembly electroless metal deposition (EMD) nanoelectrochemistry. The synthesized n-SiNW arrays have been submitted to scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), and optical studies. Initial probes of the solar device conversion properties and the photovoltaic parameters such as short-circuit current, open-circuit potential, and fill factor of the n-SiNW arrays have been explored using a liquid-junction in a photoelectrochemical (PEC) system under white light. Moreover, a direct comparison between the PEC performance of a polished n-Si(100) and the synthesized n-SiNW array photoelectrodes has been done. The PEC performance was significantly enhanced on the n-SiNWs photoelectrodes compared with that on polished n-Si(100).

  11. Thermal Conduction in Vertically Aligned Copper Nanowire Arrays and Composites.

    Barako, Michael T; Roy-Panzer, Shilpi; English, Timothy S; Kodama, Takashi; Asheghi, Mehdi; Kenny, Thomas W; Goodson, Kenneth E

    2015-09-02

    The ability to efficiently and reliably transfer heat between sources and sinks is often a bottleneck in the thermal management of modern energy conversion technologies ranging from microelectronics to thermoelectric power generation. These interfaces contribute parasitic thermal resistances that reduce device performance and are subjected to thermomechanical stresses that degrade device lifetime. Dense arrays of vertically aligned metal nanowires (NWs) offer the unique combination of thermal conductance from the constituent metal and mechanical compliance from the high aspect ratio geometry to increase interfacial heat transfer and device reliability. In the present work, we synthesize copper NW arrays directly onto substrates via templated electrodeposition and extend this technique through the use of a sacrificial overplating layer to achieve improved uniformity. Furthermore, we infiltrate the array with an organic phase change material and demonstrate the preservation of thermal properties. We use the 3ω method to measure the axial thermal conductivity of freestanding copper NW arrays to be as high as 70 W m(-1) K(-1), which is more than an order of magnitude larger than most commercial interface materials and enhanced-conductivity nanocomposites reported in the literature. These arrays are highly anisotropic, and the lateral thermal conductivity is found to be only 1-2 W m(-1) K(-1). We use these measured properties to elucidate the governing array-scale transport mechanisms, which include the effects of morphology and energy carrier scattering from size effects and grain boundaries.

  12. Enhanced photovoltaic performance of an inclined nanowire array solar cell.

    Wu, Yao; Yan, Xin; Zhang, Xia; Ren, Xiaomin

    2015-11-30

    An innovative solar cell based on inclined p-i-n nanowire array is designed and analyzed. The results show that the inclined geometry can sufficiently increase the conversion efficiency of solar cells by enhancing the absorption of light in the active region. By tuning the nanowire array density, nanowire diameter, nanowire length, as well as the proportion of intrinsic region of the inclined nanowire solar cell, a remarkable efficiency in excess of 16% can be obtained in GaAs. Similar results have been obtained in InP and Si nanowire solar cells, demonstrating the universality of the performance enhancement of inclined nanowire arrays.

  13. Template-based fabrication of nanowire-nanotube hybrid arrays

    Ye Zuxin; Liu Haidong; Schultz, Isabel; Wu Wenhao; Naugle, D G; Lyuksyutov, I

    2008-01-01

    The fabrication and structure characterization of ordered nanowire-nanotube hybrid arrays embedded in porous anodic aluminum oxide (AAO) membranes are reported. Arrays of TiO 2 nanotubes were first deposited into the pores of AAO membranes by a sol-gel technique. Co nanowires were then electrochemically deposited into the TiO 2 nanotubes to form the nanowire-nanotube hybrid arrays. Scanning electron microscopy and transmission electron microscopy measurements showed a high nanowire filling factor and a clean interface between the Co nanowire and the TiO 2 nanotube. Application of these hybrids to the fabrication of ordered nanowire arrays with highly controllable geometric parameters is discussed

  14. Nanowire sensor, sensor array, and method for making the same

    Yun, Minhee (Inventor); Myung, Nosang (Inventor); Vasquez, Richard (Inventor); Homer, Margie (Inventor); Ryan, Margaret (Inventor); Yen, Shiao-Pin (Inventor); Fleurial, Jean-Pierre (Inventor); Bugga, Ratnakumar (Inventor); Choi, Daniel (Inventor); Goddard, William (Inventor)

    2012-01-01

    The present invention relates to a nanowire sensor and method for forming the same. More specifically, the nanowire sensor comprises at least one nanowire formed on a substrate, with a sensor receptor disposed on a surface of the nanowire, thereby forming a receptor-coated nanowire. The nanowire sensor can be arranged as a sensor sub-unit comprising a plurality of homogeneously receptor-coated nanowires. A plurality of sensor subunits can be formed to collectively comprise a nanowire sensor array. Each sensor subunit in the nanowire sensor array can be formed to sense a different stimulus, allowing a user to sense a plurality of stimuli. Additionally, each sensor subunit can be formed to sense the same stimuli through different aspects of the stimulus. The sensor array is fabricated through a variety of techniques, such as by creating nanopores on a substrate and electrodepositing nanowires within the nanopores.

  15. Growth of Vertically Aligned ZnO Nanowire Arrays Using Bilayered Metal Catalysts

    2012-01-01

    12] J. P. Liu, C. X. Guo, C. M. Li et al., “Carbon-decorated ZnO nanowire array: a novel platform for direct electrochemistry of enzymes and...cited. Vertically aligned, high-density ZnO nanowires (NWs) were grown for the first time on c-plane sapphire using binary alloys of Ni/Au or Cu/Au as...deleterious to the ZnO NW array growth. Significant improvement of the Au adhesion on the substrate was noted, opening the potential for direct

  16. Plasmon resonant cavities in vertical nanowire arrays

    Bora, Mihail; Bond, Tiziana C.; Fasenfest, Benjamin J.; Behymer, Elaine M.

    2014-07-15

    Tunable plasmon resonant cavity arrays in paired parallel nanowire waveguides are presented. Resonances can be observed when the waveguide length is an odd multiple of quarter plasmon wavelengths, consistent with boundary conditions of node and antinode at the ends. Two nanowire waveguides can satisfy the dispersion relation of a planar metal-dielectric-metal waveguide of equivalent width equal to the square field average weighted gap. Confinement factors of over 10.sup.3 are possible due to plasmon focusing in the inter-wire space.

  17. Long-range magnetostatic interactions in arrays of nanowires

    Raposo, V; González, J M; Vázquez, M

    2000-01-01

    Experimental measurements and micromagnetic simulations of the hysteresis loops of arrays of cobalt nanowires are compared here. Arrays of cobalt nanowires (200 nm in diameter) were electrodeposited into the pores of alumina membranes (thickness 60 mu m). Their hysteresis loops along the axial direction of nanowires were measured using vibrating sample magnetometry. Micromagnetic simulations were performed considering dipolar interaction between nanowires leading to similar hysteresis loops as those obtained experimentally.

  18. Nanowire sensors and arrays for chemical/biomolecule detection

    Yun, Minhee; Lee, Choonsup; Vasquez, Richard P.; Ramanathan, K.; Bangar, M. A.; Chen, W.; Mulchandan, A.; Myung, N. V.

    2005-01-01

    We report electrochemical growth of single nanowire based sensors using e-beam patterned electrolyte channels, potentially enabling the controlled fabrication of individually addressable high density arrays. The electrodeposition technique results in nanowires with controlled dimensions, positions, alignments, and chemical compositions. Using this technique, we have fabricated single palladium nanowires with diameters ranging between 75 nm and 300 nm and conducting polymer nanowires (polypyrrole and polyaniline) with diameters between 100 nm and 200 nm. Using these single nanowires, we have successfully demonstrated gas sensing with Pd nanowires and pH sensing with polypirrole nanowires.

  19. Microstructural effects on the magnetic and magneto-transport properties of electrodeposited Ni nanowire arrays

    Chen, Shu-Fang; Wei, Hao Han; Liu, Chuan-Pu; Hsu, C Y; Huang, J C A

    2010-01-01

    The magnetic and magneto-transport properties of Ni nanowire (NW) arrays, fabricated by electrodeposition in anodic-aluminum-oxide (AAO) templates, have been investigated. The AAO pores have diameters ranging from 35 to 75 nm, and the crystallinity of the Ni NW arrays could change from poly-crystalline to single-crystalline with the [111] and [110] orientations based on the electrodeposition potential. Notably, double switching magnetization loops and double-peaked magnetoresistance curves were observed in [110]-oriented NWs. The crystalline orientation of the Ni NW arrays is found to influence the corresponding magnetic and magneto-transport properties significantly. These magnetic behaviors are dominated by the competition between the magneto-crystalline and shape anisotropy.

  20. Vertically integrated nanogenerator based on ZnO nanowire arrays

    Yu, Aifang; Li, Hongyu; Tang, Haoying; Liu, Tengjiao; Jiang, Peng [National Center for Nanoscience and Technology, No.11, Beiyitiao Zhongguancun, Beijing 100190 (China); Wang, Zhong Lin [National Center for Nanoscience and Technology, No.11, Beiyitiao Zhongguancun, Beijing 100190 (China); School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0245 (United States)

    2011-04-15

    We report a technique to construct a vertically integrated nanogenerator (VI-NG) based on ZnO nanowire (NW) arrays. The VI-NG consists of nine single NGs connected mixed parallel and serial by a layer-by-layer stacking. For the single layer NG, the peak output voltage and current are 0.045 V and 2.5 nA, respectively. The VI-NG produces an output power density of 2.8 nW/cm{sup 2} with a peak output voltage of 0.15 V and output current of 7.2 nA. The vertical integration of the multi-NG provides a feasible technique for effectively converting mechanical energies to electricity from environment. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Nanowire arrays restore vision in blind mice.

    Tang, Jing; Qin, Nan; Chong, Yan; Diao, Yupu; Yiliguma; Wang, Zhexuan; Xue, Tian; Jiang, Min; Zhang, Jiayi; Zheng, Gengfeng

    2018-03-06

    The restoration of light response with complex spatiotemporal features in retinal degenerative diseases towards retinal prosthesis has proven to be a considerable challenge over the past decades. Herein, inspired by the structure and function of photoreceptors in retinas, we develop artificial photoreceptors based on gold nanoparticle-decorated titania nanowire arrays, for restoration of visual responses in the blind mice with degenerated photoreceptors. Green, blue and near UV light responses in the retinal ganglion cells (RGCs) are restored with a spatial resolution better than 100 µm. ON responses in RGCs are blocked by glutamatergic antagonists, suggesting functional preservation of the remaining retinal circuits. Moreover, neurons in the primary visual cortex respond to light after subretinal implant of nanowire arrays. Improvement in pupillary light reflex suggests the behavioral recovery of light sensitivity. Our study will shed light on the development of a new generation of optoelectronic toolkits for subretinal prosthetic devices.

  2. Optical absorption enhancement in silicon nanowire arrays with a large lattice constant for photovoltaic applications.

    Lin, Chenxi; Povinelli, Michelle L

    2009-10-26

    In this paper, we use the transfer matrix method to calculate the optical absorptance of vertically-aligned silicon nanowire (SiNW) arrays. For fixed filling ratio, significant optical absorption enhancement occurs when the lattice constant is increased from 100 nm to 600 nm. The enhancement arises from an increase in field concentration within the nanowire as well as excitation of guided resonance modes. We quantify the absorption enhancement in terms of ultimate efficiency. Results show that an optimized SiNW array with lattice constant of 600 nm and wire diameter of 540 nm has a 72.4% higher ultimate efficiency than a Si thin film of equal thickness. The enhancement effect can be maintained over a large range of incidence angles.

  3. Pd nanowire arrays as electrocatalysts for ethanol electrooxidation

    Wang, Hong; Cheng, Faliang [Dongguan University of Technology, Dongguan 523106 (China); Xu, Changwei; Jiang, Sanping [School of Mechanical and Aerospace Engineering, Nanyang Technological University, Singapore 639798 (Singapore)

    2007-05-15

    Highly ordered Pd nanowire arrays were prepared by template-electrodeposition method using anodic aluminum oxide template. The Pd nanowire arrays, in this paper, have high electrochemical active surface and show excellent catalytic properties for ethanol electrooxidation in alkaline media. The activity of Pd nanowire arrays for ethanol oxidation is not only higher that of Pd film, but also higher than that of commercial E-TEK PtRu(2:1 by weight)/C. The micrometer sized pores and channels in nanowire arrays act as structure units. They make liquid fuel diffuse into and products diffuse out of the catalysts layer much easier, therefore, the utilization efficiency of catalysts gets higher. Pd nanowire arrays are stable catalysts for ethanol oxidation. The nanowire arrays may be a great potential in direct ethanol fuel cells and ethanol sensors. (author)

  4. Magnetization reversal and coercivity of Fe3Se4 nanowire arrays

    Li, D.; Li, S. J.; Zhou, Y. T.; Bai, Y.; Zhu, Y. L.; Ren, W. J.; Long, G.; Zeng, H.; Zhang, Z. D.

    2015-05-01

    The microstructure and magnetic properties of Fe3Se4 nanowire (NW) arrays in anodic aluminum oxide (AAO) porous membrane are studied. Cross-sectional SEM and plane-view TEM images show that the mean wire diameter (dw) and the center-to-center spacing (D) of Fe3Se4 nanowires are about 220 nm and 330 nm, respectively. The field-cooled magnetization dependent on the temperature indicates a Curie temperature around 334 K for the Fe3Se4 nanowires. The coercivities of Fe3Se4 nanowires at 10 K, obtained from the in-plane and out-of-plane hysteresis loops, are as high as 22.4 kOe and 23.3 kOe, which can be understood from the magnetocrystalline anisotropy and the magnetization reversal process.

  5. Dye gain gold NW array of surface plasmon polariton waveguide

    Jun Zhu

    Full Text Available Plasmon lasers can support ultrasmall mode confinement and ultrafast dynamics with device feature sizes below the diffraction limit. At present in the single visible light frequency, the optical gain method of constraint SPP on metal nanowires structure reported less. We design the gold nanowire array structure, consisting of PMMA and R6G dye molecules as gain, by 488 nm pump in the middle of the nanowires position for wide range of light, use symmetry broken overcome that momentum does not match the photonic and SPP energy conversion. Theoretical analysis shows that dyes provide coherent optical feedback, resulting in nanowires face will observe laser properties of surface plasmons. Feature analysis: the incident light and pump joint strength is greater than the sum of strength which is the incident light, pump respectively. Under the effect of dye molecules gain effective, length of SPP transmission can increase 1 µm. The results achieved in a single optical frequency of stimulated radiation, application of dye optical gain can achieve continuous gain effect. This is for the future development of plasma amplifier and the wavelength laser. Keywords: SPP, Stimulated radiation, Gold nanowires array, Dye molecules

  6. InP nanowire array solar cell with cleaned sidewalls

    Cui, Y.; Plissard, S.; Wang, J.; Vu, T.T.T.; Smalbrugge, E.; Geluk, E.J.; de Vries, T.; Bolk, J.; Trainor, M.J.; Verheijen, M.A.; Haverkort, J.E.M.; Bakkers, E.P.A.M.

    2013-01-01

    We have fabricated InP nanowire array solar cells with an axial p-n junction. Catalyst gold nanoparticles were first patterned into an array by nanoimprint lithography. The nanowire array was grown in 19 minutes by vapor-liquid-solid growth. The sidewalls were in-situ etched by HCl and ex-situ

  7. Growth of ZnO nanowire arrays directly onto Si via substrate topographical adjustments using both wet chemical and dry etching methods

    Smith, Nathan A., E-mail: 523615@swansea.ac.uk [Centre for Nanohealth, Department of Physics, College of Science, University of Swansea, Singleton Park SA2 8PP United Kingdom (United Kingdom); Evans, Jon E.; Jones, Daniel R. [Multidisciplinary Nanotechnology Centre, College of Engineering, University of Swansea, Singleton Park, SA2 8PP United Kingdom (United Kingdom); Lord, Alex M. [Centre for Nanohealth, College of Engineering, University of Swansea, Singleton Park, SA2 8PP United Kingdom (United Kingdom); Wilks, S.P. [Centre for Nanohealth, Department of Physics, College of Science, University of Swansea, Singleton Park SA2 8PP United Kingdom (United Kingdom)

    2015-03-15

    Highlights: • Arrays of catalyst-free ZnO NWs have been grown by CVD without seed layers on Si. • Si surface topography was altered by substrate etching, resulting in NW growth. • XPS analysis shows growth is related to topography and not surface contamination. • Using e-beam lithography with etching, selective nanowire growth is demonstrated. • Electrical measurements on the arrays show improved conduction through the Si. - Abstract: Arrays of CVD catalyst-free ZnO nanowires have been successfully grown without the use of seed layers, using both wet chemical and dry plasma etching methods to alter surface topography. XPS analysis indicates that the NW growth cannot be attributed to a substrate surface chemistry and is therefore directly related to the substrate topography. These nanowires demonstrate structural and optical properties typical of CVD ZnO nanowires. Moreover, the NW arrays exhibit a degree of vertical alignment of less than 20° from the substrate normal. Electrical measurements suggest an improved conduction path through the substrate over seed layer grown nanowires. Furthermore, the etching technique was combined with e-beam lithography to produce high resolution selective area nanowire growth. The ability to pattern uniform nanowires using mature dry etch technology coupled with the increased charge transport through the substrate demonstrates the potential of this technique in the vertical integration of nanowire arrays.

  8. Piezoelectric Nanogenerator Using p-Type ZnO Nanowire Arrays

    Lu, Ming-Pei

    2009-03-11

    Using phosphorus-doped ZnO nanowire (NW) arrays grown on silicon substrate, energy conversion using the p-type ZnO NWs has been demonstrated for the first time. The p-type ZnO NWs produce positive output voltage pulses when scanned by a conductive atomic force microscope (AFM) in contact mode. The output voltage pulse is generated when the tip contacts the stretched side (positive piezoelectric potential side) of the NW. In contrast, the n-type ZnO NW produces negative output voltage when scanned by the AFM tip, and the output voltage pulse is generated when the tip contacts the compressed side (negative potential side) of the NW. In reference to theoretical simulation, these experimentally observed phenomena have been systematically explained based on the mechanism proposed for a nanogenerator. © 2009 American Chemical Society.

  9. Growth of high-aspect ratio horizontally-aligned ZnO nanowire arrays.

    Soman, Pranav; Darnell, Max; Feldman, Marc D; Chen, Shaochen

    2011-08-01

    A method of fabricating horizontally-aligned zinc-oxide (ZnO) nanowire (NW) arrays with full control over the width and length is demonstrated. SEM images reveal the hexagonal structure typical of zinc oxide NWs. Arrays of high-aspect ratio horizontal ZnO NWs are fabricated by making use of the lateral overgrowth from dot patterns created by electron beam lithography (EBL). An array of patterned wires are lifted off and transferred to a flexible PDMS substrate with possible applications in several key nanotechnology areas.

  10. Growth of Horizonatal ZnO Nanowire Arrays on Any Substrate

    Qin, Yong

    2008-12-04

    A general method is presented for growing laterally aligned and patterned ZnO nanowire (NW) arrays on any substrate as long as it is flat. The orientation control is achieved using the combined effect from ZnO seed layer and the catalytically inactive Cr (or Sn) layer for NW growth. The growth temperature (< 100 °C) is so low that the method can be applied to a wide range of substrates that can be inorganic, organic, single crystal, polycrystal, or amorphous. The laterally aligned ZnO NW arrays can be employed for various applications, such as gas sensor, field effect transistor, nanogenerator, and flexible electronics. © 2008 American Chemical Society.

  11. The influence of passivation and photovoltaic properties of α-Si:H coverage on silicon nanowire array solar cells

    2013-01-01

    Silicon nanowire (SiNW) arrays for radial p-n junction solar cells offer potential advantages of light trapping effects and quick charge collection. Nevertheless, lower open circuit voltages (Voc) lead to lower energy conversion efficiencies. In such cases, the performance of the solar cells depends critically on the quality of the SiNW interfaces. In this study, SiNW core-shell solar cells have been fabricated by growing crystalline silicon (c-Si) nanowires via the metal-assisted chemical etching method and by depositing hydrogenated amorphous silicon (α-Si:H) via the plasma-enhanced chemical vapor deposition (PECVD) method. The influence of deposition parameters on the coverage and, consequently, the passivation and photovoltaic properties of α-Si:H layers on SiNW solar cells have been analyzed. PMID:24059343

  12. Photoconductivity of Germanium Nanowire Arrays Incorporated in Anodic Aluminum Oxide

    Polyakov, B; Prikulis, J; Grigorjeva, L; Millers, D; Daly, B; Holmes, J D; Erts, D

    2007-01-01

    Photoconductivity of germanium nanowire arrays of 50 and 100 nm diameter incorporated into Anodic Aluminum Oxide (AAO) membranes illuminated with visible light is investigated. Photocurrent response to excitation radiation with time constants faster than 10 -4 s were governed by absorption of incident light by nanowires, while photokinetics with time constants of the order of 10 -3 s originates from the photoluminescence of the AAO matrix. Possible applications of nanowire arrays inside AAO as photoresistors are discussed

  13. Emission enhancement, light extraction and carrier dynamics in InGaAs/GaAs nanowire arrays

    Kivisaari, Pyry; Chen, Yang; Anttu, Nicklas

    2018-03-01

    Nanowires (NWs) have the potential for a wide range of new optoelectronic applications. For example, light-emitting diodes that span over the whole visible spectrum are currently being developed from NWs to overcome the well known green gap problem. However, due to their small size, NW devices exhibit special properties that complicate their analysis, characterization, and further development. In this paper, we develop a full optoelectronic simulation tool for NW array light emitters accounting for carrier transport and wave-optical emission enhancement (EE), and we use the model to simulate InGaAs/GaAs NW array light emitters with different geometries and temperatures. Our results show that NW arrays emit light preferentially to certain angles depending on the NW diameter and temperature, encouraging temperature- and angle-resolved measurements of NW array light emission. On the other hand, based on our results both the EE and light extraction efficiency can easily change by at least a factor of two between room temperature and 77 K, complicating the characterization of NW light emitters if conventional methods are used. Finally, simulations accounting for surface recombination emphasize its major effect on the device performance. For example, a surface recombination velocity of 104 cm s-1 reported earlier for bare InGaAs surfaces results in internal quantum efficiencies less than 30% for small-diameter NWs even at the temperature of 30 K. This highlights that core-shell structures or high-quality passivation techniques are eventually needed to achieve efficient NW-based light emitters.

  14. Photoelectrochemical Water Oxidation by GaAs Nanowire Arrays Protected with Atomic Layer Deposited NiO x Electrocatalysts

    Zeng, Joy; Xu, Xiaoqing; Parameshwaran, Vijay; Baker, Jon; Bent, Stacey; Wong, H.-S. Philip; Clemens, Bruce

    2018-02-01

    Photoelectrochemical (PEC) hydrogen production makes possible the direct conversion of solar energy into chemical fuel. In this work, PEC photoanodes consisting of GaAs nanowire (NW) arrays were fabricated, characterized, and then demonstrated for the oxygen evolution reaction (OER). Uniform and periodic GaAs nanowire arrays were grown on a heavily n-doped GaAs substrates by metal-organic chemical vapor deposition selective area growth. The nanowire arrays were characterized using cyclic voltammetry and impedance spectroscopy in a non-aqueous electrochemical system using ferrocene/ferrocenium (Fc/Fc+) as a redox couple, and a maximum oxidation photocurrent of 11.1 mA/cm2 was measured. GaAs NW arrays with a 36 nm layer of nickel oxide (NiO x ) synthesized by atomic layer deposition were then used as photoanodes to drive the OER. In addition to acting as an electrocatalyst, the NiO x layer served to protect the GaAs NWs from oxidative corrosion. Using this strategy, GaAs NW photoanodes were successfully used for the oxygen evolution reaction. This is the first demonstration of GaAs NW arrays for effective OER, and the fabrication and protection strategy developed in this work can be extended to study any other nanostructured semiconductor materials systems for electrochemical solar energy conversion.

  15. Structure and field emission of graphene layers on top of silicon nanowire arrays

    Huang, Bohr-Ran; Chan, Hui-Wen; Jou, Shyankay; Chen, Guan-Yu; Kuo, Hsiu-An; Song, Wan-Jhen

    2016-01-01

    Graphical abstract: - Highlights: • We prepared graphene on top of silicon nanowires by transfer-print technique. • Graphene changed from discrete flakes to a continuous by repeated transfer-print. • The triple-layer graphene had high electron field emission due to large edge ratio. - Abstract: Monolayer graphene was grown on copper foils and then transferred on planar silicon substrates and on top of silicon nanowire (SiNW) arrays to form single- to quadruple-layer graphene films. The morphology, structure, and electron field emission (FE) of these graphene films were investigated. The graphene films on the planar silicon substrates were continuous. The single- to triple-layer graphene films on the SiNW arrays were discontinuous and while the quadruple-layer graphene film featured a mostly continuous area. The Raman spectra of the graphene films on the SiNW arrays showed G and G′ bands with a singular-Lorentzian shape together with a weak D band. The D band intensity decreased as the number of graphene layers increased. The FE efficiency of the graphene films on the planar silicon substrates and the SiNW arrays varied with the number of graphene layers. The turn-on field for the single- to quadruple-layer graphene films on planar silicon substrates were 4.3, 3.7, 3.5 and 3.4 V/μm, respectively. The turn-on field for the single- to quadruple-layer graphene films on SiNW arrays decreased to 3.9, 3.3, 3.0 and 3.3 V/μm, respectively. Correlation of the FE with structure and morphology of the graphene films is discussed.

  16. Structure and field emission of graphene layers on top of silicon nanowire arrays

    Huang, Bohr-Ran; Chan, Hui-Wen [Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Jou, Shyankay, E-mail: sjou@mail.ntust.edu.tw [Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Chen, Guan-Yu [Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Kuo, Hsiu-An; Song, Wan-Jhen [Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China)

    2016-01-30

    Graphical abstract: - Highlights: • We prepared graphene on top of silicon nanowires by transfer-print technique. • Graphene changed from discrete flakes to a continuous by repeated transfer-print. • The triple-layer graphene had high electron field emission due to large edge ratio. - Abstract: Monolayer graphene was grown on copper foils and then transferred on planar silicon substrates and on top of silicon nanowire (SiNW) arrays to form single- to quadruple-layer graphene films. The morphology, structure, and electron field emission (FE) of these graphene films were investigated. The graphene films on the planar silicon substrates were continuous. The single- to triple-layer graphene films on the SiNW arrays were discontinuous and while the quadruple-layer graphene film featured a mostly continuous area. The Raman spectra of the graphene films on the SiNW arrays showed G and G′ bands with a singular-Lorentzian shape together with a weak D band. The D band intensity decreased as the number of graphene layers increased. The FE efficiency of the graphene films on the planar silicon substrates and the SiNW arrays varied with the number of graphene layers. The turn-on field for the single- to quadruple-layer graphene films on planar silicon substrates were 4.3, 3.7, 3.5 and 3.4 V/μm, respectively. The turn-on field for the single- to quadruple-layer graphene films on SiNW arrays decreased to 3.9, 3.3, 3.0 and 3.3 V/μm, respectively. Correlation of the FE with structure and morphology of the graphene films is discussed.

  17. Preparation and characterization of CuO nanowire arrays

    Yu Dongliang; Ge Chuannan; Du Youwei

    2009-01-01

    CuO nanowire arrays were prepared by oxidation of copper nanowires embedded in anodic aluminum oxide (AAO) membranes. The AAO was fabricated in an oxalic acid at a constant voltage. Copper nanowires were formed in the nanopores of the AAO membranes in an electrochemical deposition process. The oxidized copper nanowires at different temperatures were studied. X-ray diffraction patterns confirmed the formation of a CuO phase after calcining at 500 0 C in air for 30 h. A transmission electron microscopy was used to characterize the nanowire morphologies. Raman spectra were performed to study the CuO nanowire arrays. After measuring, we found that the current-voltage curve of the CuO nanowires is nonlinear.

  18. Electrodeposited highly-ordered manganese oxide nanowire arrays for supercapacitors

    Liu, Haifeng; Lu, Bingqiang; Wei, Shuiqiang; Bao, Mi; Wen, Yanxuan; Wang, Fan

    2012-07-01

    Large arrays of well-aligned Mn oxide nanowires were prepared by electrodeposition using anodic aluminum oxide templates. The sizes of nanowires were tuned by varying the electrotype solution involved and the MnO2 nanowires with 10 μm in length were obtained in a neutral KMnO4 bath for 1 h. MnO2 nanowire arrays grown on conductor substance save the tedious electrode-making process, and electrochemical characterization demonstrates that the MnO2 nanowire arrays electrode has good capacitive behavior. Due to the limited mass transportation in narrow spacing, the spacing effects between the neighbor nanowires have show great influence to the electrochemical performance.

  19. Phosphorus Doped Zn 1- x Mg x O Nanowire Arrays

    Lin, S. S.; Hong, J. I.; Song, J. H.; Zhu, Y.; He, H. P.; Xu, Z.; Wei, Y. G.; Ding, Y.; Snyder, R. L.; Wang, Z. L.

    2009-01-01

    We demonstrate the growth of phosphorus doped Zn 1-xMg xO nanowire (NW) using pulsed laser deposition. For the first time, p-type Zn 0.92Mg 0.08O:P NWs are likely obtained In reference to atomic force microscopy based piezoelectric output

  20. A Stable Flexible Silicon Nanowire Array as Anode for High-Performance Lithium-ion Batteries

    Wang, Jiantao; Wang, Hui; Zhang, Bingchang; Wang, Yao; Lu, Shigang; Zhang, Xiaohong

    2015-01-01

    Highlights: • A flexible SiNW array in PDMS structure is designed and fabricated as Li-ion battery anode material. • The aggregation and fracture of SiNWs are alleviated by the flexible PDMS skeleton during the process of charge and discharge. • The loose SiO 2 shells coating on the SiNWscould form the protective layer in charge/discharge. • The as-obtain flexible SiNW array/PDMS composite exhibits a much better cycling stability. - Abstract: A Silicon nanowire (SiNW) array inserted into flexible poly-dimethylsiloxane (SiNW array/PDMS) composite structure as anode with high capacity and long-term cycling stability is synthesized by a cost-effective and scalable method. In this structure, the aggregation and fracture of SiNWs are alleviated by the flexible PDMS skeleton. Act as the main active component, the SiNWs are coated by loose SiO 2 shells. These loose SiO 2 shells not only provide space for the large volume changes of SiNW, but also react with the electrolyte and form the stable protective layer during the processes of the lithiation and delithiation. These two functions could improve the cycling stability and columbic efficiency of the SiNWs. The as-obtain flexible SiNW array/PDMS composite structure exhibits excellent long-term cycling stability with a specific capacity of 887.2 mA·h·g −1 and capacity retention of ∼83.4% over 350 cycles at 0.5 C rate compared with the fifteenth cycle. The design of this new structure provides a potential way for developing other functional composite materials

  1. Relaxing the electrostatic screening effect by patterning vertically-aligned silicon nanowire arrays into bundles for field emission application

    Hung, Yung-Jr, E-mail: yungjrhung@gmail.com [Department of Electronic Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Department of Photonics, National Sun Yat-sen University, No. 70, Lienhai Rd., Kaohsiung 80424, Taiwan, ROC (China); Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Lee, San-Liang [Department of Electronic Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Beng, Looi Choon [Faculty of Engineering, Multimedia University, Jalan Multimedia, 63100 Cyberjaya, Selangor (Malaysia); Chang, Hsuan-Chen [Department of Electronic Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Huang, Yung-Jui [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Lee, Kuei-Yi; Huang, Ying-Sheng [Department of Electronic Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China)

    2014-04-01

    Top-down fabrication strategies are proposed and demonstrated to realize arrays of vertically-aligned silicon nanowire bundles and bundle arrays of carbon nanotube–silicon nanowire (CNT–SiNW) heterojunctions, aiming for releasing the electrostatic screening effect and improving the field emission characteristics. The trade-off between the reduction in the electrostatic screening effect and the decrease of emission sites leads to an optimal SiNW bundle arrangement which enables the lowest turn-on electric field of 1.4 V/μm and highest emission current density of 191 μA/cm{sup 2} among all testing SiNW samples. Benefiting from the superior thermal and electrical properties of CNTs and the flexible patterning technologies available for SiNWs, bundle arrays of CNT–SiNW heterojunctions show improved and highly-uniform field emission with a lower turn-on electric field of 0.9 V/μm and higher emission current density of 5.86 mA/cm{sup 2}. The application of these materials and their corresponding fabrication approaches is not limited to the field emission but can be used for a variety of emerging fields like nanoelectronics, lithium-ion batteries, and solar cells. - Highlights: • Aligned silicon nanowire (SiNW) bundle arrays are realized with top-down methods. • Growing carbon nanotubes atop SiNW bundle arrays enable uniform field emission. • A turn-on field of 0.9 V/μm and an emission current of > 5 mA/cm{sup 2} are achieved.

  2. Investigation of CuInSe2 nanowire arrays with core-shell structure electrodeposited at various duty cycles into anodic alumina templates

    Cheng, Yu-Song; Wang, Na-Fu; Tsai, Yu-Zen; Lin, Jia-Jun; Houng, Mau-Phon

    2017-02-01

    Copper indium selenide (CuInSe2) nanowire (NW) arrays were prepared at various electrolyte duty cycles by filling anodic alumina templates through the pulsed electrodeposition technique. X-ray diffraction and scanning electron microscopy (SEM) images showed that the nucleation mechanism of CuInSe2 NW arrays was affected by the electrodeposition duty cycle. Moreover, SEM images showed that the diameter and length of the NWs were 80 nm and 2 μm, respectively. Furthermore, PEDOT/CuInSe2 NW core-shell arrays were fabricated using surfactant-modified CuInSe2 NW surfaces showing the lotus effect. Transmission electron microscopy images confirmed that a core-shell structure was achieved. Current-voltage plots revealed that the CuInSe2 NW arrays were p-type semiconductors; moreover, the core-shell structure improved the diode ideality factor from 3.91 to 2.63.

  3. Geometrical optics, electrostatics, and nanophotonic resonances in absorbing nanowire arrays.

    Anttu, Nicklas

    2013-03-01

    Semiconductor nanowire arrays have shown promise for next-generation photovoltaics and photodetection, but enhanced understanding of the light-nanowire interaction is still needed. Here, we study theoretically the absorption of light in an array of vertical InP nanowires by moving continuously, first from the electrostatic limit to the nanophotonic regime and then to the geometrical optics limit. We show how the absorption per volume of semiconductor material in the array can be varied by a factor of 200, ranging from 10 times weaker to 20 times stronger than in a bulk semiconductor sample.

  4. Broadband absorption of semiconductor nanowire arrays for photovoltaic applications

    Huang, Ningfeng; Lin, Chenxi; Povinelli, Michelle L

    2012-01-01

    We use electromagnetic simulations to carry out a systematic study of broadband absorption in vertically-aligned semiconductor nanowire arrays for photovoltaic applications. We study six semiconductor materials that are commonly used for solar cells. We optimize the structural parameters of each nanowire array to maximize the ultimate efficiency. We plot the maximal ultimate efficiency as a function of height to determine how it approaches the perfect-absorption limit. We further show that the ultimate efficiencies of optimized nanowire arrays exceed those of equal-height thin films for all six materials and over a wide range of heights from 100 nm to 100 µm

  5. Generic nano-imprint process for fabrication of nanowire arrays

    Pierret, Aurelie; Hocevar, Moira; Algra, Rienk E; Timmering, Eugene C; Verschuuren, Marc A; Immink, George W G; Verheijen, Marcel A; Bakkers, Erik P A M [Philips Research Laboratories Eindhoven, High Tech Campus 11, 5656 AE Eindhoven (Netherlands); Diedenhofen, Silke L [FOM Institute for Atomic and Molecular Physics c/o Philips Research Laboratories, High Tech Campus 4, 5656 AE Eindhoven (Netherlands); Vlieg, E, E-mail: e.p.a.m.bakkers@tue.nl [IMM, Solid State Chemistry, Radboud University Nijmegen, Heyendaalseweg 135, 6525 AJ Nijmegen (Netherlands)

    2010-02-10

    A generic process has been developed to grow nearly defect-free arrays of (heterostructured) InP and GaP nanowires. Soft nano-imprint lithography has been used to pattern gold particle arrays on full 2 inch substrates. After lift-off organic residues remain on the surface, which induce the growth of additional undesired nanowires. We show that cleaning of the samples before growth with piranha solution in combination with a thermal anneal at 550 deg. C for InP and 700 deg. C for GaP results in uniform nanowire arrays with 1% variation in nanowire length, and without undesired extra nanowires. Our chemical cleaning procedure is applicable to other lithographic techniques such as e-beam lithography, and therefore represents a generic process.

  6. Transfer-free synthesis of highly ordered Ge nanowire arrays on glass substrates

    Nakata, M.; Toko, K., E-mail: toko@bk.tsukuba.ac.jp; Suemasu, T. [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Jevasuwan, W.; Fukata, N. [National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan); Saitoh, N.; Yoshizawa, N. [Electron Microscope Facility, TIA, AIST, 16-1 Onogawa, Tsukuba 305-8569 (Japan)

    2015-09-28

    Vertically aligned Ge nanowires (NWs) are directly synthesized on glass via vapor-liquid-solid (VLS) growth using chemical-vapor deposition. The use of the (111)-oriented Ge seed layer, formed by metal-induced crystallization at 325 °C, dramatically improved the density, uniformity, and crystal quality of Ge NWs. In particular, the VLS growth at 400 °C allowed us to simultaneously achieve the ordered morphology and high crystal quality of the Ge NW array. Transmission electron microscopy demonstrated that the resulting Ge NWs had no dislocations or stacking faults. Production of high-quality NW arrays on amorphous insulators will promote the widespread application of nanoscale devices.

  7. Field Emission of ITO-Coated Vertically Aligned Nanowire Array.

    Lee, Changhwa

    2010-04-29

    An indium tin oxide (ITO)-coated vertically aligned nanowire array is fabricated, and the field emission characteristics of the nanowire array are investigated. An array of vertically aligned nanowires is considered an ideal structure for a field emitter because of its parallel orientation to the applied electric field. In this letter, a vertically aligned nanowire array is fabricated by modified conventional UV lithography and coated with 0.1-μm-thick ITO. The turn-on electric field intensity is about 2.0 V/μm, and the field enhancement factor, β, is approximately 3,078 when the gap for field emission is 0.6 μm, as measured with a nanomanipulator in a scanning electron microscope.

  8. Field Emission of ITO-Coated Vertically Aligned Nanowire Array.

    Lee, Changhwa; Lee, Seokwoo; Lee, Seung S

    2010-01-01

    An indium tin oxide (ITO)-coated vertically aligned nanowire array is fabricated, and the field emission characteristics of the nanowire array are investigated. An array of vertically aligned nanowires is considered an ideal structure for a field emitter because of its parallel orientation to the applied electric field. In this letter, a vertically aligned nanowire array is fabricated by modified conventional UV lithography and coated with 0.1-μm-thick ITO. The turn-on electric field intensity is about 2.0 V/μm, and the field enhancement factor, β, is approximately 3,078 when the gap for field emission is 0.6 μm, as measured with a nanomanipulator in a scanning electron microscope.

  9. Recrystallized arrays of bismuth nanowires with trigonal orientation.

    Limmer, Steven J; Yelton, W Graham; Erickson, Kristopher J; Medlin, Douglas L; Siegal, Michael P

    2014-01-01

    We demonstrate methods to improve the crystalline-quality of free-standing Bi nanowires arrays on a Si substrate and enhance the preferred trigonal orientation for thermoelectric performance by annealing the arrays above the 271.4 °C Bi melting point. The nanowires maintain their geometry during melting due to the formation of a thin Bi-oxide protective shell that contains the molten Bi. Recrystallizing nanowires from the melt improves crystallinity; those cooled rapidly demonstrate a strong trigonal orientation preference.

  10. Oriented Mn-doped CuO nanowire arrays

    Han, Dongqiang; Wu, Zhaofeng; Wang, Zhihe; Yang, Shaoguang

    2016-01-01

    Using anodic aluminum oxide membranes as the nanoreactors and controller, oriented nanowire arrays of the diluted magnetic semiconductor Mn-doped CuO have been successfully fabricated using Mn(NO_3)_2 · 4H_2O and Cu(NO_3)_2 · 3H_2O as the starting materials. X-ray diffraction measurements showed that the as-prepared oriented nanowire arrays are of high purity. Scanning electron microscope and transmission electron microscope studies showed the nanowires are oriented, continuous and uniform with a diameter and length of about 170 nm and several tens of micrometers, respectively, and thus of a high aspect ratio. Low-temperature magnetic measurements showed the ferromagnetic property of the oriented Mn-doped CuO nanowire arrays with the critical temperature at around 80 K, which will endow them with great potential applications in spintronics in the future. (paper)

  11. Ambient template synthesis of multiferroic MnWO4 nanowires and nanowire arrays

    Zhou Hongjun; Yiu Yuen; Aronson, M.C.; Wong, Stanislaus S.

    2008-01-01

    The current report describes the systematic synthesis of polycrystalline, multiferroic MnWO 4 nanowires and nanowire arrays with controllable chemical composition and morphology, using a modified template-directed methodology under ambient room-temperature conditions. We were able to synthesize nanowires measuring 55±10, 100±20, and 260±40 nm in diameter, respectively, with lengths ranging in the microns. Extensive characterization of as-prepared samples has been performed using X-ray diffraction, scanning electron microscopy, transmission electron microscopy (TEM), high-resolution TEM, and energy-dispersive X-ray spectroscopy. Magnetic behavior in these systems was also probed. - Graphical abstract: Systematic synthesis of crystalline, multiferroic MnWO4 nanowires and nanowire arrays with controllable chemical composition and morphology, using a modified template-directed methodology under ambient room-temperature conditions

  12. Highly effective field-effect mobility amorphous InGaZnO TFT mediated by directional silver nanowire arrays.

    Liu, Hung-Chuan; Lai, Yi-Chun; Lai, Chih-Chung; Wu, Bing-Shu; Zan, Hsiao-Wen; Yu, Peichen; Chueh, Yu-Lun; Tsai, Chuang-Chuang

    2015-01-14

    In this work, we demonstrate sputtered amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) with a record high effective field-effect mobility of 174 cm(2)/V s by incorporating silver nanowire (AgNW) arrays to channel electron transport. Compared to the reference counterpart without nanowires, the over 5-fold enhancement in the effective field-effect mobility exhibits clear dependence on the orientation as well as the surface coverage ratio of silver nanowires. Detailed material and device analyses reveal that during the room-temperature IGZO sputtering indium and oxygen diffuse into the nanowire matrix while the nanowire morphology and good contact between IGZO and nanowires are maintained. The unchanged morphology and good interfacial contact lead to high mobility and air-ambient-stable characteristics up to 3 months. Neither hysteresis nor degraded bias stress reliability is observed. The proposed AgNW-mediated a-IGZO TFTs are promising for development of large-scale, flexible, transparent electronics.

  13. Broadband High Efficiency Fractal-Like and Diverse Geometry Silicon Nanowire Arrays for Photovoltaic Applications

    AL-Zoubi, Omar H.

    Solar energy has many advantages over conventional sources of energy. It is abundant, clean and sustainable. One way to convert solar energy directly into electrical energy is by using the photovoltaic solar cells (PVSC). Despite PVSC are becoming economically competitive, they still have high cost and low light to electricity conversion efficiency. Therefore, increasing the efficiency and reducing the cost are key elements for producing economically more competitive PVSC that would have significant impact on energy market and saving environment. A significant percentage of the PVSC cost is due to the materials cost. For that, thin films PVSC have been proposed which offer the benefits of the low amount of material and fabrication costs. Regrettably, thin film PVSC show poor light to electricity conversion efficiency because of many factors especially the high optical losses. To enhance conversion efficiency, numerous techniques have been proposed to reduce the optical losses and to enhance the absorption of light in thin film PVSC. One promising technique is the nanowire (NW) arrays in general and the silicon nanowire (SiNW) arrays in particular. The purpose of this research is to introduce vertically aligned SiNW arrays with enhanced and broadband absorption covering the entire solar spectrum while simultaneously reducing the amount of material used. To this end, we apply new concept for designing SiNW arrays based on employing diversity of physical dimensions, especially radial diversity within certain lattice configurations. In order to study the interaction of light with SiNW arrays and compute their optical properties, electromagnetic numerical modeling is used. A commercial numerical electromagnetic solver software package, high frequency structure simulation (HFSS), is utilized to model the SiNW arrays and to study their optical properties. We studied different geometries factors that affect the optical properties of SiNW arrays. Based on this study, we

  14. Wafer-scale fabrication of uniform Si nanowire arrays using the Si wafer with UV/Ozone pretreatment

    Bai, Fan; Li, Meicheng; Huang, Rui; Yu, Yue; Gu, Tiansheng; Chen, Zhao; Fan, Huiyang; Jiang, Bing

    2013-01-01

    The electroless etching technique combined with the process of UV/Ozone pretreatment is presented for wafer-scale fabrication of the silicon nanowire (SiNW) arrays. The high-level uniformity of the SiNW arrays is estimated by the value below 0.2 of the relative standard deviation of the reflection spectra on the 4-in. wafer. Influence of the UV/Ozone pretreatment on the formation of SiNW arrays is investigated. It is seen that a very thin SiO 2 produced by the UV/Ozone pretreatment improves the uniform nucleation of Ag nanoparticles (NPs) on the Si surface because of the effective surface passivation. Meanwhile, the SiO 2 located among the adjacent Ag NPs can obstruct the assimilation growth of Ag NPs, facilitating the deposition of the uniform and dense Ag NPs catalysts, which induces the formation of the SiNW arrays with good uniformity and high filling ratio. Furthermore, the remarkable antireflective and hydrophobic properties are observed for the SiNW arrays which display great potential in self-cleaning antireflection applications

  15. Low-Temperature Rapid Fabrication of ZnO Nanowire UV Sensor Array by Laser-Induced Local Hydrothermal Growth

    Sukjoon Hong

    2013-01-01

    Full Text Available We demonstrate ZnO nanowire based UV sensor by laser-induced hydrothermal growth of ZnO nanowire. By inducing a localized temperature rise using focused laser, ZnO nanowire array at ~15 μm size consists of individual nanowires with ~8 μm length and 200~400 nm diameter is readily synthesized on gold electrode within 30 min at the desired position. The laser-induced growth process is consecutively applied on two different points to bridge the micron gap between the electrodes. The resultant photoconductive ZnO NW interconnections display 2~3 orders increase in the current upon the UV exposure at a fixed voltage bias. It is also confirmed that the amount of photocurrent can be easily adjusted by changing the number of ZnO NW array junctions. The device exhibits clear response to the repeated UV illumination, suggesting that this process can be usefully applied for the facile fabrication of low-cost UV sensor array.

  16. Generic nano-imprint process for fabrication of nanowire arrays

    Pierret, A.; Hocevar, M.; Diedenhofen, S.L.; Algra, R.E.; Vlieg, E.; Timmering, E.C.; Verschuuren, M.A.; Immink, W.G.G.; Verheijen, M.A.; Bakkers, E.P.A.M.

    2010-01-01

    A generic process has been developed to grow nearly defect-free arrays of (heterostructured) InP and GaP nanowires. Soft nano-imprint lithography has been used to pattern gold particle arrays on full 2inch substrates. After lift-off organic residues remain on the surface, which induce the growth of

  17. Plasmon-polariton modes of dense Au nanowire arrays

    Yan, Hongdan; Lemmens, Peter; Wulferding, Dirk; Cetin, Mehmet Fatih [IPKM, TU-BS, Braunschweig (Germany); Tornow, Sabine; Zwicknagl, Gertrud [IMP, TU-BS, Braunschweig (Germany); Krieg, Ulrich; Pfnuer, Herbert [IFP, LU Hannover (Germany); Daum, Winfried; Lilienkamp, Gerhard [IEPT, TU Clausthal (Germany); Schilling, Meinhard [EMG, TU-BS, Braunschweig (Germany)

    2011-07-01

    Using optical absorption and other techniques we study plasmon-polariton modes of dense Au nanowire arrays as function of geometrical parameters and coupling to molecular degrees of freedom. For this instance we electrochemically deposit Au nanowires in porous alumina with well controlled morphology and defect concentration. Transverse and longitudinal modes are observed in the absorption spectra resulting from the anisotropic plasmonic structure. The longitudinal mode shows a blue shift of energy with increasing length of the wires due to the more collective nature of this response. We compare our observations with model calculations and corresponding results on 2D Ag nanowire lattices.

  18. Magnetoimpedance effects in a CoNiFe nanowire array

    Atalay, S., E-mail: selcuk.atalay@inonu.edu.tr [Inonu University, Science and Arts Faculty, Physics Department, Malatya (Turkey); Kaya, H.; Atalay, F.E.; Aydogmus, E. [Inonu University, Science and Arts Faculty, Physics Department, Malatya (Turkey)

    2013-06-05

    Highlights: ► CoNiFe nanowires were produced by electrodeposition method. ► Magnetoimpedance effect of nanowires arrays were investigated. ► Single peak behaviour was observed in the magnetoimpedance curve. ► Nanowire arrays exhibit uniaxial magnetic anisotropy along the wire axis. -- Abstract: This report describes the growth of CoNiFe nanowires into highly ordered porous anodic alumina oxide (AAO) templates by DC electrodeposition at a pH value of 2.6. Scanning electron microscopy (SEM) observations revealed that the wires have diameters of approximately 270–290 nm and a length of 25 μm. The energy dispersive X-ray (EDX) analysis indicated that the composition of the nanowires is Co{sub 12}Ni{sub 64}Fe{sub 24}. Electrical contacts were created on both sides of the nanowire array, and their magnetoimpedance (MI) properties were investigated. The impedance value was initially 1.2 ohm at low frequency and increased to approximately 1000 ohm for a 33-MHz driving current frequency under no applied magnetic field. All the MI curves exhibited single peak behaviour due to the high shape anisotropy. The maximum MI change at the 33-MHz driving current frequency was 2.72%. The maximum resistance change was 5.4% at 33 MHz.

  19. Investigation of CuInSe{sub 2} nanowire arrays with core–shell structure electrodeposited at various duty cycles into anodic alumina templates

    Cheng, Yu-Song [Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan 701, Taiwan (China); Wang, Na-Fu; Tsai, Yu-Zen [Department of Electronic Engineering, Cheng Shiu University, 840 Chengcing Rd., Niaosong District, Kaohsiung City 833, Taiwan (China); Lin, Jia-Jun [Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan 701, Taiwan (China); Houng, Mau-Phon, E-mail: mphoung@eembox.ncku.edu.tw [Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan 701, Taiwan (China)

    2017-02-28

    Highlights: • The present paper reports that CuInSe2 NW arrays were fabricated through pulsed electrode position onto an AAO template with various duty cycles, and a pore-filling ratio of approximately 92% was achieved. • GIXRD patterns showed that all CuInSe2 NW arrays were chalcopyrite and SAED images confirmed that the CuInSe2 NWs were polycrystalline. • PEDOT/CuInSe2 NW core–shell arrays were fabricated using surfactant-modified CuInSe2 NW surfaces showing the lotus effect. • Current–voltage plots revealed that the CuInSe2 NW arrays were p-type semiconductors; moreover, the core–shell structure improved the diode ideality factor from 3.91 to 2.63. - Abstract: Copper indium selenide (CuInSe{sub 2}) nanowire (NW) arrays were prepared at various electrolyte duty cycles by filling anodic alumina templates through the pulsed electrodeposition technique. X-ray diffraction and scanning electron microscopy (SEM) images showed that the nucleation mechanism of CuInSe{sub 2} NW arrays was affected by the electrodeposition duty cycle. Moreover, SEM images showed that the diameter and length of the NWs were 80 nm and 2 μm, respectively. Furthermore, PEDOT/CuInSe{sub 2} NW core–shell arrays were fabricated using surfactant-modified CuInSe{sub 2} NW surfaces showing the lotus effect. Transmission electron microscopy images confirmed that a core–shell structure was achieved. Current–voltage plots revealed that the CuInSe{sub 2} NW arrays were p-type semiconductors; moreover, the core–shell structure improved the diode ideality factor from 3.91 to 2.63.

  20. Investigation of CuInSe2 nanowire arrays with core–shell structure electrodeposited at various duty cycles into anodic alumina templates

    Cheng, Yu-Song; Wang, Na-Fu; Tsai, Yu-Zen; Lin, Jia-Jun; Houng, Mau-Phon

    2017-01-01

    Highlights: • The present paper reports that CuInSe2 NW arrays were fabricated through pulsed electrode position onto an AAO template with various duty cycles, and a pore-filling ratio of approximately 92% was achieved. • GIXRD patterns showed that all CuInSe2 NW arrays were chalcopyrite and SAED images confirmed that the CuInSe2 NWs were polycrystalline. • PEDOT/CuInSe2 NW core–shell arrays were fabricated using surfactant-modified CuInSe2 NW surfaces showing the lotus effect. • Current–voltage plots revealed that the CuInSe2 NW arrays were p-type semiconductors; moreover, the core–shell structure improved the diode ideality factor from 3.91 to 2.63. - Abstract: Copper indium selenide (CuInSe 2 ) nanowire (NW) arrays were prepared at various electrolyte duty cycles by filling anodic alumina templates through the pulsed electrodeposition technique. X-ray diffraction and scanning electron microscopy (SEM) images showed that the nucleation mechanism of CuInSe 2 NW arrays was affected by the electrodeposition duty cycle. Moreover, SEM images showed that the diameter and length of the NWs were 80 nm and 2 μm, respectively. Furthermore, PEDOT/CuInSe 2 NW core–shell arrays were fabricated using surfactant-modified CuInSe 2 NW surfaces showing the lotus effect. Transmission electron microscopy images confirmed that a core–shell structure was achieved. Current–voltage plots revealed that the CuInSe 2 NW arrays were p-type semiconductors; moreover, the core–shell structure improved the diode ideality factor from 3.91 to 2.63.

  1. Conducting polymer nanowire arrays for high performance supercapacitors.

    Wang, Kai; Wu, Haiping; Meng, Yuena; Wei, Zhixiang

    2014-01-15

    This Review provides a brief summary of the most recent research developments in the fabrication and application of one-dimensional ordered conducting polymers nanostructure (especially nanowire arrays) and their composites as electrodes for supercapacitors. By controlling the nucleation and growth process of polymerization, aligned conducting polymer nanowire arrays and their composites with nano-carbon materials can be prepared by employing in situ chemical polymerization or electrochemical polymerization without a template. This kind of nanostructure (such as polypyrrole and polyaniline nanowire arrays) possesses high capacitance, superior rate capability ascribed to large electrochemical surface, and an optimal ion diffusion path in the ordered nanowire structure, which is proved to be an ideal electrode material for high performance supercapacitors. Furthermore, flexible, micro-scale, threadlike, and multifunctional supercapacitors are introduced based on conducting polyaniline nanowire arrays and their composites. These prototypes of supercapacitors utilize the high flexibility, good processability, and large capacitance of conducting polymers, which efficiently extend the usage of supercapacitors in various situations, and even for a complicated integration system of different electronic devices. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Optical Sensing with Simultaneous Electrochemical Control in Metal Nanowire Arrays

    Janos Vörös

    2010-11-01

    Full Text Available This work explores the alternative use of noble metal nanowire systems in large-scale array configurations to exploit both the nanowires’ conductive nature and localized surface plasmon resonance (LSPR. The first known nanowire-based system has been constructed, with which optical signals are influenced by the simultaneous application of electrochemical potentials. Optical characterization of nanowire arrays was performed by measuring the bulk refractive index sensitivity and the limit of detection. The formation of an electrical double layer was controlled in NaCl solutions to study the effect of local refractive index changes on the spectral response. Resonance peak shifts of over 4 nm, a bulk refractive index sensitivity up to 115 nm/RIU and a limit of detection as low as 4.5 × 10−4 RIU were obtained for gold nanowire arrays. Simulations with the Multiple Multipole Program (MMP confirm such bulk refractive index sensitivities. Initial experiments demonstrated successful optical biosensing using a novel form of particle-based nanowire arrays. In addition, the formation of an ionic layer (Stern-layer upon applying an electrochemical potential was also monitored by the shift of the plasmon resonance.

  3. Study of spin dynamics and damping on the magnetic nanowire arrays with various nanowire widths

    Cho, Jaehun [Department of Physics, Inha University, Incheon, 402-751 (Korea, Republic of); Fujii, Yuya; Konioshi, Katsunori [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan); Yoon, Jungbum [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Kim, Nam-Hui; Jung, Jinyong [Department of Physics, Inha University, Incheon, 402-751 (Korea, Republic of); Miwa, Shinji [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan); Jung, Myung-Hwa [Department of Physics, Sogang University, Seoul, 121-742 (Korea, Republic of); Suzuki, Yoshishige [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan); You, Chun-Yeol, E-mail: cyyou@inha.ac.kr [Department of Physics, Inha University, Incheon, 402-751 (Korea, Republic of)

    2016-07-01

    We investigate the spin dynamics including Gilbert damping in the ferromagnetic nanowire arrays. We have measured the ferromagnetic resonance of ferromagnetic nanowire arrays using vector-network analyzer ferromagnetic resonance (VNA-FMR) and analyzed the results with the micromagnetic simulations. We find excellent agreement between the experimental VNA-FMR spectra and micromagnetic simulations result for various applied magnetic fields. We find that the same tendency of the demagnetization factor for longitudinal and transverse conditions, N{sub z} (N{sub y}) increases (decreases) as increasing the nanowire width in the micromagnetic simulations while N{sub x} is almost zero value in transverse case. We also find that the Gilbert damping constant increases from 0.018 to 0.051 as the increasing nanowire width for the transverse case, while it is almost constant as 0.021 for the longitudinal case. - Highlights: • We investigate the spin dynamic properties in the ferromagnetic nanowire arrays. • The demagnetization factors have similar tendency with the prism geometry results. • The Gilbert damping constant is increased from 0.018 to 0.051 as the increasing nanowire width for the transverse. • The Gilbert damping constant is almost constant as 0.021 for the longitudinal case.

  4. Understanding InP Nanowire Array Solar Cell Performance by Nanoprobe-Enabled Single Nanowire Measurements.

    Otnes, Gaute; Barrigón, Enrique; Sundvall, Christian; Svensson, K Erik; Heurlin, Magnus; Siefer, Gerald; Samuelson, Lars; Åberg, Ingvar; Borgström, Magnus T

    2018-05-09

    III-V solar cells in the nanowire geometry might hold significant synthesis-cost and device-design advantages as compared to thin films and have shown impressive performance improvements in recent years. To continue this development there is a need for characterization techniques giving quick and reliable feedback for growth development. Further, characterization techniques which can improve understanding of the link between nanowire growth conditions, subsequent processing, and solar cell performance are desired. Here, we present the use of a nanoprobe system inside a scanning electron microscope to efficiently contact single nanowires and characterize them in terms of key parameters for solar cell performance. Specifically, we study single as-grown InP nanowires and use electron beam induced current characterization to understand the charge carrier collection properties, and dark current-voltage characteristics to understand the diode recombination characteristics. By correlating the single nanowire measurements to performance of fully processed nanowire array solar cells, we identify how the performance limiting parameters are related to growth and/or processing conditions. We use this understanding to achieve a more than 7-fold improvement in efficiency of our InP nanowire solar cells, grown from a different seed particle pattern than previously reported from our group. The best cell shows a certified efficiency of 15.0%; the highest reported value for a bottom-up synthesized InP nanowire solar cell. We believe the presented approach have significant potential to speed-up the development of nanowire solar cells, as well as other nanowire-based electronic/optoelectronic devices.

  5. CONDUCTING-POLYMER NANOWIRE IMMUNOSENSOR ARRAYS FOR MICROBIAL PATHOGENS

    The lack of methods for routine rapid and sensitive detection and quantification of specific pathogens has limited the amount of information available on their occurrence in drinking water and other environmental samples. The nanowire biosensor arrays developed in this study w...

  6. New Applications of Electrochemically Produced Porous Semiconductors and Nanowire Arrays

    Leisner Malte

    2010-01-01

    Full Text Available Abstract The growing demand for electro mobility together with advancing concepts for renewable energy as primary power sources requires sophisticated methods of energy storage. In this work, we present a Li ion battery based on Si nanowires, which can be produced reliable and cheaply and which shows superior properties, such as a largely increased capacity and cycle stability. Sophisticated methods based on electrochemical pore etching allow to produce optimized regular arrays of nanowires, which can be stabilized by intrinsic cross-links, which serve to avoid unwanted stiction effects and allow easy processing.

  7. Silicon nanowire arrays as learning chemical vapour classifiers

    Niskanen, A O; Colli, A; White, R; Li, H W; Spigone, E; Kivioja, J M

    2011-01-01

    Nanowire field-effect transistors are a promising class of devices for various sensing applications. Apart from detecting individual chemical or biological analytes, it is especially interesting to use multiple selective sensors to look at their collective response in order to perform classification into predetermined categories. We show that non-functionalised silicon nanowire arrays can be used to robustly classify different chemical vapours using simple statistical machine learning methods. We were able to distinguish between acetone, ethanol and water with 100% accuracy while methanol, ethanol and 2-propanol were classified with 96% accuracy in ambient conditions.

  8. Ferromagnetic resonance in low interacting permalloy nanowire arrays

    Raposo, V.; Zazo, M.; Flores, A. G.; Iñiguez, J. [Departamento de Física Aplicada, University of Salamanca, E-37071 Salamanca (Spain); Garcia, J.; Vega, V.; Prida, V. M. [Departamento de Física, Universidad de Oviedo, E-33007 Oviedo (Spain)

    2016-04-14

    Dipolar interactions on magnetic nanowire arrays have been investigated by various techniques. One of the most powerful techniques is the ferromagnetic resonance spectroscopy, because the resonance field depends directly on the anisotropy field strength and its frequency dependence. In order to evaluate the influence of magnetostatic dipolar interactions among ferromagnetic nanowire arrays, several densely packed hexagonal arrays of NiFe nanowires have been prepared by electrochemical deposition filling self-ordered nanopores of alumina membranes with different pore sizes but keeping the same interpore distance. Nanowires’ diameter was changed from 90 to 160 nm, while the lattice parameter was fixed to 300 nm, which was achieved by carefully reducing the pore diameter by means of Atomic Layer Deposition of conformal Al{sub 2}O{sub 3} layers on the nanoporous alumina templates. Field and frequency dependence of ferromagnetic resonance have been studied in order to obtain the dispersion diagram which gives information about anisotropy, damping factor, and gyromagnetic ratio. The relationship between resonance frequency and magnetic field can be explained by the roles played by the shape anisotropy and dipolar interactions among the ferromagnetic nanowires.

  9. Angular dependence of the coercivity in arrays of ferromagnetic nanowires

    Holanda, J.; Silva, D.B.O.; Padrón-Hernández, E.

    2015-01-01

    We present a new magnetic model for polycrystalline nanowires arrays in porous anodic aluminum oxide. The principal consideration here is the crystalline structure and the morphology of the wires and them the dipolar interactions between the crystals into the wire. Other aspect here is the direct calculation of the dipolar energy for the interaction of one wire with the others in the array. The free energy density was formulated for polycrystalline nanowires arrays in order to determinate the anisotropy effective field. It was using the microstructure study by scanning and transmission electron microscopy for the estimation of the real structure of the wires. After the structural analysis we used the angular dependences for the coercivity field and for the remnant magnetization to determine the properties of the wires. All analysis were made by the theory treatment proposed by Stoner and Wohlfarth

  10. Angular dependence of the coercivity in arrays of ferromagnetic nanowires

    Holanda, J. [Departamento de Física, Universidade Federal de Pernambuco, Recife 50670-901, PE (Brazil); Silva, D.B.O. [Pós-Graduação em Ciência de Materiais, Universidade Federal de Pernambuco, Recife 50670-901, PE (Brazil); Padrón-Hernández, E., E-mail: padron@df.ufpe.br [Departamento de Física, Universidade Federal de Pernambuco, Recife 50670-901, PE (Brazil); Pós-Graduação em Ciência de Materiais, Universidade Federal de Pernambuco, Recife 50670-901, PE (Brazil)

    2015-03-15

    We present a new magnetic model for polycrystalline nanowires arrays in porous anodic aluminum oxide. The principal consideration here is the crystalline structure and the morphology of the wires and them the dipolar interactions between the crystals into the wire. Other aspect here is the direct calculation of the dipolar energy for the interaction of one wire with the others in the array. The free energy density was formulated for polycrystalline nanowires arrays in order to determinate the anisotropy effective field. It was using the microstructure study by scanning and transmission electron microscopy for the estimation of the real structure of the wires. After the structural analysis we used the angular dependences for the coercivity field and for the remnant magnetization to determine the properties of the wires. All analysis were made by the theory treatment proposed by Stoner and Wohlfarth.

  11. Three-dimensional cotton-like nickel nanowire@Ni-Co hydroxide nanosheet arrays as binder-free electrode for high-performance asymmetric supercapacitor

    Wan, Houzhao; Li, Lang; Xu, Yang; Tan, Qiuyang; Liu, Xiang; Zhang, Jun; Wang, Hanbin; Wang, Hao

    2018-05-01

    Three-dimensional (3D) cotton-like Ni-Co layered double hydroxide nanosheet arrays/nickel nanowires (3D Ni-Co LDH/NiNw) were successfully fabricated through a facile chemical bath deposition method. The 3D nickel nanowires are used as a conductive substrate with robust adhesion for high-pseudocapacitance Ni-Co LDH. The 3D Ni-Co LDH/NiNw electrode shows a high areal specific capacitance of 14 F cm-2 at 5 mA cm-2 and quality specific capacitance of 466.6 F g-1 at 0.125 A g-1 with respect to the whole quality of the electrode. The fabricated asymmetric supercapacitor exhibits a remarkable energy density of 0.387 mWh cm-2 using Ni-Co LDH/NiNw as the negative electrode. This high-performance composite electrode presents a new and affordable general approach for supercapacitors.

  12. Low temperature preparation of Ag-doped ZnO nanowire arrays for sensor and light-emitting diode applications

    Lupan, O.; Viana, B.; Cretu, V.; Postica, V.; Adelung, R.; Pauporté, T.

    2016-02-01

    Transition metal doped-oxide semiconductor nanostructures are important to achieve enhanced and new properties for advanced applications. We describe the low temperature preparation of ZnO:Ag nanowire/nanorod (NW/NR) arrays by electrodeposition at 90 °C. The NWs have been characterized by SEM, EDX, transmittance and photoluminescence (PL) measurements. The integration of Ag in the crystal is shown. Single nanowire/nanorod of ZnO:Ag was integrated in a nanosensor structure leading to new and enhanced properties. The ultraviolet (UV) response of the nanosensor was investigated at room temperature. Experimental results indicate that ZnO:Ag (0.75 μM) nanosensor possesses faster response/recovery time and better response to UV light than those reported in literature. The sensor structure has been also shown to give a fast response for the hydrogen detection with improved performances compared to pristine ZnO NWs. ZnO:Ag nanowire/nanorod arrays electrochemically grown on p-type GaN single crystal layer is also shown to act as light emitter in LED structures. The emission wavelength is red-shifted compared to pristine ZnO NW array. At low Ag concentration a single UV-blue emission is found whereas at higher concentration of dopant the emission is broadened and extends up to the red wavelength range. Our study indicates that high quality ZnO:Ag NW/NR prepared at low temperature by electrodeposition can serve as building nanomaterials for new sensors and light emitting diodes (LEDs) structures with low-power consumption.

  13. Quantifying the Traction Force of a Single Cell by Aligned Silicon Nanowire Array

    Li, Zhou

    2009-10-14

    The physical behaviors of stationary cells, such as the morphology, motility, adhesion, anchorage, invasion and metastasis, are likely to be important for governing their biological characteristics. A change in the physical properties of mammalian cells could be an indication of disease. In this paper, we present a silicon-nanowire-array based technique for quantifying the mechanical behavior of single cells representing three distinct groups: normal mammalian cells, benign cells (L929), and malignant cells (HeLa). By culturing the cells on top of NW arrays, the maximum traction forces of two different tumor cells (HeLa, L929) have been measured by quantitatively analyzing the bending of the nanowires. The cancer cell exhibits a larger traction force than the normal cell by ∼20% for a HeLa cell and ∼50% for a L929 cell. The traction forces have been measured for the L929 cells and mechanocytes as a function of culture time. The relationship between cells extending area and their traction force has been investigated. Our study is likely important for studying the mechanical properties of single cells and their migration characteristics, possibly providing a new cellular level diagnostic technique. © 2009 American Chemical Society.

  14. Defect level characterization of silicon nanowire arrays: Towards novel experimental paradigms

    Carapezzi, Stefania; Castaldini, Antonio; Cavallini, Anna [Department of Physics and Astronomy, University of Bologna, V.le Berti Pichat 6/2, Bologna (Italy); Irrera, Alessia [IPCF CNR, Viale Stagno D' Alcontres n. 37-98158, Messina, Italy and MATIS IMM CNR, Viale Santa Sofia n. 64, 95123 Catania (Italy)

    2014-02-21

    The huge amount of knowledge, and infrastructures, brought by silicon (Si) technology, make Si Nanowires (NWs) an ideal choice for nano-electronic Si-based devices. This, in turn, challenges the scientific research to adapt the technical and theoretical paradigms, at the base of established experimental techniques, in order to probe the properties of these systems. Metal-assisted wet-Chemical Etching (MaCE) [1, 2] is a promising fast, easy and cheap method to grow high aspect-ratio aligned Si NWs. Further, contrary to other fabrication methods, this method avoids the possible detrimental effects related to Au diffusion into NWs. We investigated the bandgap level diagram of MaCE Si NW arrays, phosphorous-doped, by means of Deep Level Transient Spectroscopy. The presence of both shallow and deep levels has been detected. The results have been examined in the light of the specificity of the MaCE growth. The study of the electronic levels in Si NWs is, of course, of capital importance in view of the integration of Si NW arrays as active layers in actual devices.

  15. Wafer-Scale High-Throughput Ordered Growth of Vertically Aligned ZnO Nanowire Arrays

    Wei, Yaguang

    2010-09-08

    This article presents an effective approach for patterned growth of vertically aligned ZnO nanowire (NW) arrays with high throughput and low cost at wafer scale without using cleanroom technology. Periodic hole patterns are generated using laser interference lithography on substrates coated with the photoresist SU-8. ZnO NWs are selectively grown through the holes via a low-temperature hydrothermal method without using a catalyst and with a superior control over orientation, location/density, and as-synthesized morphology. The development of textured ZnO seed layers for replacing single crystalline GaN and ZnO substrates extends the large-scale fabrication of vertically aligned ZnO NW arrays on substrates of other materials, such as polymers, Si, and glass. This combined approach demonstrates a novel method of manufacturing large-scale patterned one-dimensional nanostructures on various substrates for applications in energy harvesting, sensing, optoelectronics, and electronic devices. © 2010 American Chemical Society.

  16. Organic vapor discrimination with chemiresistor arrays of temperature modulated tin-oxide nanowires and thiolate-monolayer-protected gold nanoparticles

    Scholten, K; Bohrer, F I; Dattoli, E; Lu, W; Zellers, E T, E-mail: ezellers@umich.edu [Center for Wireless Integrated Microsystems, University of Michigan, Ann Arbor, MI 48109-2122 (United States)

    2011-03-25

    This paper explores the discrimination of organic vapors with arrays of chemiresistors (CRs) employing interface layers of tin-oxide nanowires (NWs) and thiolate-monolayer-protected gold nanoparticles (MPNs). The former devices use contact-printed mats of NWs on micro-hotplate membranes to bridge a pair of metal electrodes. Oxidation at the NW surface causes changes in charge transport, the temperature dependence of which differs among different vapors, permitting vapor discrimination. The latter devices use solvent cast films of MPNs on interdigital electrodes operated at room temperature. Sorption into the organic monolayers causes changes in film tunneling resistance that differ among different vapors and MPN structures, permitting vapor discrimination. Here, we compare the performance and assess the 'complementarity' of these two types of sensors. Calibrated responses from an NW CR operated at two different temperatures and from a set of four different MPN CRs were generated for three test vapors: n-hexane, toluene, and nitromethane. This pooled data set was then analyzed using principal components regression classification models with varying degrees of random error superimposed on the responses via Monte Carlo simulation in order to estimate the rates of recognition/discrimination for arrays comprising different combinations of sensors. Results indicate that the diversity of most of the dual MPN-CR arrays exceeds that of the dual NW-CR array. Additionally, in assessing all possible arrays of 4-6 CR sensors, the recognition rates of the hybrid arrays (i.e. MPN + NW) were no better than that of the 4-sensor array containing only MPN CRs.

  17. Intact mammalian cell function on semi-conductor nanowire arrays: new perspectives for cell-based biosensing

    Berthing, Trine; Bonde, Sara; Sørensen, Claus Birger

    2011-01-01

    . A selection of critical cell functions and pathways are shown not to be impaired, including cell adhesion, membrane integrity, intracellular enzyme activity, DNA uptake, cytosolic and membrane protein expression, and the neuronal maturation pathway. The results demonstrate the low invasiveness of InAs NW......Nanowires (NWs) are attracting more and more interest due to their potential cellular applications, such as delivery of compounds or sensing platforms. Arrays of vertical indium-arsenide (InAs) NWs are interfaced with human embryonic kidney cells and rat embryonic dorsal root ganglion neurons...

  18. Fabrication of CoZn alloy nanowire arrays: Significant improvement in magnetic properties by annealing process

    Koohbor, M.; Soltanian, S.; Najafi, M.; Servati, P.

    2012-01-01

    Highlights: ► Increasing the Zn concentration changes the structure of NWs from hcp to amorphous. ► Increasing the Zn concentration significantly reduces the Hc value of NWs. ► Magnetic properties of CoZn NWs can be significantly enhanced by appropriate annealing. ► The pH of electrolyte has no significant effect on the properties of the NW arrays. ► Deposition frequency has considerable effects on the magnetic properties of NWs. - Abstract: Highly ordered arrays of Co 1−x Zn x (0 ≤ x ≤ 0.74) nanowires (NWs) with diameters of ∼35 nm and high length-to-diameter ratios (up to 150) were fabricated by co-electrodeposition of Co and Zn into pores of anodized aluminum oxide (AAO) templates. The Co and Zn contents of the NWs were adjusted by varying the ratio of Zn and Co ion concentrations in the electrolyte. The effect of the Zn content, electrodeposition conditions (frequency and pH) and annealing on the structural and magnetic properties (e.g., coercivity (Hc) and squareness (Sq)) of NW arrays were investigated using X-ray diffraction (XRD), scanning electron microscopy, electron diffraction, and alternating gradient force magnetometer (AGFM). XRD patterns reveal that an increase in the concentration of Zn ions of the electrolyte forces the hcp crystal structure of Co NWs to change into an amorphous phase, resulting in a significant reduction in Hc. It was found that the magnetic properties of NWs can be significantly improved by appropriate annealing process. The highest values for Hc (2050 Oe) and Sq (0.98) were obtained for NWs electrodeposited using 0.95/0.05 Co:Zn concentrations at 200 Hz and annealed at 575 °C. While the pH of electrolyte is found to have no significant effect on the structural and magnetic properties of the NW arrays, the electrodeposition frequency has considerable effects on the magnetic properties of the NW arrays. The changes in magnetic property of NWs are rooted in a competition between shape anisotropy and

  19. Fabrication of CoZn alloy nanowire arrays: Significant improvement in magnetic properties by annealing process

    Koohbor, M. [Department of Physics, University of Kurdistan, Sanandaj (Iran, Islamic Republic of); Soltanian, S., E-mail: s.soltanian@gmail.com [Department of Physics, University of Kurdistan, Sanandaj (Iran, Islamic Republic of); Department of Electrical and Computer Engineering, University of British Columbia, Vancouver (Canada); Najafi, M. [Department of Physics, University of Kurdistan, Sanandaj (Iran, Islamic Republic of); Department of Physics, Hamadan University of Technology, Hamadan (Iran, Islamic Republic of); Servati, P. [Department of Electrical and Computer Engineering, University of British Columbia, Vancouver (Canada)

    2012-01-05

    Highlights: Black-Right-Pointing-Pointer Increasing the Zn concentration changes the structure of NWs from hcp to amorphous. Black-Right-Pointing-Pointer Increasing the Zn concentration significantly reduces the Hc value of NWs. Black-Right-Pointing-Pointer Magnetic properties of CoZn NWs can be significantly enhanced by appropriate annealing. Black-Right-Pointing-Pointer The pH of electrolyte has no significant effect on the properties of the NW arrays. Black-Right-Pointing-Pointer Deposition frequency has considerable effects on the magnetic properties of NWs. - Abstract: Highly ordered arrays of Co{sub 1-x}Zn{sub x} (0 {<=} x {<=} 0.74) nanowires (NWs) with diameters of {approx}35 nm and high length-to-diameter ratios (up to 150) were fabricated by co-electrodeposition of Co and Zn into pores of anodized aluminum oxide (AAO) templates. The Co and Zn contents of the NWs were adjusted by varying the ratio of Zn and Co ion concentrations in the electrolyte. The effect of the Zn content, electrodeposition conditions (frequency and pH) and annealing on the structural and magnetic properties (e.g., coercivity (Hc) and squareness (Sq)) of NW arrays were investigated using X-ray diffraction (XRD), scanning electron microscopy, electron diffraction, and alternating gradient force magnetometer (AGFM). XRD patterns reveal that an increase in the concentration of Zn ions of the electrolyte forces the hcp crystal structure of Co NWs to change into an amorphous phase, resulting in a significant reduction in Hc. It was found that the magnetic properties of NWs can be significantly improved by appropriate annealing process. The highest values for Hc (2050 Oe) and Sq (0.98) were obtained for NWs electrodeposited using 0.95/0.05 Co:Zn concentrations at 200 Hz and annealed at 575 Degree-Sign C. While the pH of electrolyte is found to have no significant effect on the structural and magnetic properties of the NW arrays, the electrodeposition frequency has considerable effects on

  20. Manipulation and Investigation of Uniformly-Spaced Nanowire Array on a Substrate via Dielectrophoresis and Electrostatic Interaction

    U Hyeok Choi

    2018-06-01

    Full Text Available Directed-assembly of nanowires on the dielectrics-covered parallel electrode structure is capable of producing uniformly-spaced nanowire array at the electrode gap due to dielectrophoretic nanowire attraction and electrostatic nanowire repulsion. Beyond uniformly-spaced nanowire array formation, the control of spacing in the array is beneficial in that it should be the experimental basis of the precise positioning of functional nanowires on a circuit. Here, we investigate the material parameters and bias conditions to modulate the nanowire spacing in the ordered array, where the nanowire array formation is readily attained due to the electrostatic nanowire interaction. A theoretical model for the force calculation and the simulation of the induced charge in the assembled nanowire verifies that the longer nanowires on thicker dielectric layer tend to be assembled with a larger pitch due to the stronger nanowire-nanowire electrostatic repulsion, which is consistent with the experimental results. It was claimed that the stronger dielectrophoretic force is likely to attract more nanowires that are suspended in solution at the electrode gap, causing them to be less-spaced. Thus, we propose a generic mechanism, competition of dielectrophoretic and electrostatic force, to determine the nanowire pitch in an ordered array. Furthermore, this spacing-controlled nanowire array offers a way to fabricate the high-density nanodevice array without nanowire registration.

  1. Ultradense, Deep Subwavelength Nanowire Array Photovoltaics As Engineered Optical Thin Films

    Tham, Douglas; Heath, James R.

    2010-01-01

    A photovoltaic device comprised of an array of 20 nm wide, 32 nm pitch array of silicon nanowires is modeled as an optical material. The nanowire array (NWA) has characteristic device features that are deep in the subwavelength regime for light

  2. Ultra-thin g-C{sub 3}N{sub 4} nanosheets wrapped silicon nanowire array for improved chemical stability and enhanced photoresponse

    Wang, Beibei; Yu, Hongtao; Quan, Xie, E-mail: quanxie@dlut.edu.cn; Chen, Shuo

    2014-11-15

    Highlights: • g-C{sub 3}N{sub 4}, as an oxygen free and metal free protective material for Si, was proposed. • g-C{sub 3}N{sub 4} nanosheets wrapped Si nanowire array was synthesized. • SiNW/g-C{sub 3}N{sub 4} exhibited enhancement of photoelectrochemical stability and photocurrent. - Abstract: In order to inhibit the oxidation of Si materials in aqueous solution, Si nanowire array was wrapped by ultra-thin g-C{sub 3}N{sub 4} nanosheets via an electrophoresis process. Scanning electron microscopy and transmission electron microscopy images showed that g-C{sub 3}N{sub 4} nanosheets were evenly distributed on the surface of Si nanowire array. X-ray diffraction patterns indicated that Si nanowire array/g-C{sub 3}N{sub 4} nanosheets were composed of Si (4 0 0 crystal plane) and g-C{sub 3}N{sub 4} (0 0 2 and 1 0 0 crystal planes). The cyclic voltammetry curves revealed that the corrosion of Si nanowire array was restrained under the protection of g-C{sub 3}N{sub 4} nanosheets. Furthermore, the photocurrent density of Si nanowire array/g-C{sub 3}N{sub 4} nanosheets increased by nearly 3 times compared to that of bare Si nanowire array due to the effective charge separation caused by the built-in electric field at the interface. This work will facilitate the applications of Si materials in aqueous solution, such as solar energy harvest and photocatalytic pollution control.

  3. Magnetic alloy nanowire arrays with different lengths: Insights into the crossover angle of magnetization reversal process

    Samanifar, S.; Alikhani, M. [Department of Physics, University of Kashan, Kashan 87317-51167 (Iran, Islamic Republic of); Almasi Kashi, M., E-mail: almac@kashanu.ac.ir [Department of Physics, University of Kashan, Kashan 87317-51167 (Iran, Islamic Republic of); Institute of Nanoscience and Nanotechnology, University of Kashan, Kashan 87317-51167 (Iran, Islamic Republic of); Ramazani, A. [Department of Physics, University of Kashan, Kashan 87317-51167 (Iran, Islamic Republic of); Institute of Nanoscience and Nanotechnology, University of Kashan, Kashan 87317-51167 (Iran, Islamic Republic of); Montazer, A.H. [Institute of Nanoscience and Nanotechnology, University of Kashan, Kashan 87317-51167 (Iran, Islamic Republic of)

    2017-05-15

    Nanoscale magnetic alloy wires are being actively investigated, providing fundamental insights into tuning properties in magnetic data storage and processing technologies. However, previous studies give trivial information about the crossover angle of magnetization reversal process in alloy nanowires (NWs). Here, magnetic alloy NW arrays with different compositions, composed of Fe, Co and Ni have been electrochemically deposited into hard-anodic aluminum oxide templates with a pore diameter of approximately 150 nm. Under optimized conditions of alumina barrier layer and deposition bath concentrations, the resulting alloy NWs with aspect ratio and saturation magnetization (M{sub s}) up to 550 and 1900 emu cm{sup −3}, respectively, are systematically investigated in terms of composition, crystalline structure and magnetic properties. Using angular dependence of coercivity extracted from hysteresis loops, the reversal processes are evaluated, indicating non-monotonic behavior. The crossover angle (θ{sub c}) is found to depend on NW length and M{sub s}. At a constant M{sub s}, increasing NW length decreases θ{sub c}, thereby decreasing the involvement of vortex mode during the magnetization reversal process. On the other hand, decreasing M{sub s} decreases θ{sub c} in large aspect ratio (>300) alloy NWs. Phenomenologically, it is newly found that increasing Ni content in the composition decreases θ{sub c}. The angular first-order reversal curve (AFORC) measurements including the irreversibility of magnetization are also investigated to gain a more detailed insight into θ{sub c}. - Highlights: • Magnetic alloy NWs with aspect ratios up to 550 were fabricated into hard-AAO templates. • Morphology, composition, crystal structure and magnetic properties were investigated. • Angular dependence of coercivity was used to describe the magnetization reversal process. • The crossover angle of magnetization reversal was found to depend on NW length and M{sub s}.

  4. Large-area aligned growth of single-crystalline organic nanowire arrays for high-performance photodetectors

    Wu Yiming; Zhang Xiujuan; Pan Huanhuan; Zhang Xiwei; Zhang Yuping; Zhang Xiaozhen; Jie Jiansheng

    2013-01-01

    Due to their extraordinary properties, single-crystalline organic nanowires (NWs) are important building blocks for future low-cost and efficient nano-optoelectronic devices. However, it remains a critical challenge to assemble organic NWs rationally in an orientation-, dimensionality- and location-controlled manner. Herein, we demonstrate a feasible method for aligned growth of single-crystalline copper phthalocyanine (CuPc) NW arrays with high density, large-area uniformity and perfect crossed alignment by using Au film as a template. The growth process was investigated in detail. The Au film was found to have a critical function in the aligned growth of NWs, but may only serve as the active site for NW nucleation because of the large surface energy, as well as direct the subsequent aligned growth. The as-prepared NWs were then transferred to construct single NW-based photoconductive devices, which demonstrated excellent photoresponse properties with robust stability and reproducibility; the device showed a high switching ratio of ∼180, a fast response speed of ∼100 ms and could stand continuous operation up to 2 h. Importantly, this strategy can be extended to other organic molecules for their synthesis of NW arrays, revealing great potential for use in the construction of large-scale high-performance functional nano-optoelectronic devices. (paper)

  5. Magnetic behavior of arrays of nickel nanowires

    Karim, S.; Maaz, K.; Ahmed, M.; Nisar, A.

    2012-01-01

    Recently, there is an increasing interest in magnetic nano wires because of their unusual properties compared to the bulk materials. To understand the complexity of nano wire arrays and to improve their potential in various applications more studies are still needed, for example, to understand completely the effect of geometrical factors, i.e. aspect ratio, areal density etc., on magnetic properties of these arrays. In this work, arrays of nickel nano wires with aspect ratio is proportional to 1200 and diameter ranging between 25-100 nm were fabricated by electrodeposition in etched ion track templates. Samples with areal density from 1 X 10/sup 6/ cm/sup -2/ to 1 X 10/ sup 8/ cm/sup -2/ were prepared. Measurements of magnetic hysteresis loops were performed at room temperature with SQUID magnetometer and magnetic properties of arrays of different diameters and aspect ratios were compared. Coercivity of the wires showed strong dependence on aspect ratio, diameter and microstructure. Room temperature coercivity of the wires showed a maximum at is proportional to 40 nm diameter and arrays with high density of nano wires showed lower coercivity. The results were discussed by taking into account anisotropies originating from the shape, crystalline structure and magnetostatic interactions among the wires and by previous experimental observations in literature. (Orig./A.B.)

  6. Toward optimized light utilization in nanowire arrays using scalable nanosphere lithography and selected area growth.

    Madaria, Anuj R; Yao, Maoqing; Chi, Chunyung; Huang, Ningfeng; Lin, Chenxi; Li, Ruijuan; Povinelli, Michelle L; Dapkus, P Daniel; Zhou, Chongwu

    2012-06-13

    Vertically aligned, catalyst-free semiconducting nanowires hold great potential for photovoltaic applications, in which achieving scalable synthesis and optimized optical absorption simultaneously is critical. Here, we report combining nanosphere lithography (NSL) and selected area metal-organic chemical vapor deposition (SA-MOCVD) for the first time for scalable synthesis of vertically aligned gallium arsenide nanowire arrays, and surprisingly, we show that such nanowire arrays with patterning defects due to NSL can be as good as highly ordered nanowire arrays in terms of optical absorption and reflection. Wafer-scale patterning for nanowire synthesis was done using a polystyrene nanosphere template as a mask. Nanowires grown from substrates patterned by NSL show similar structural features to those patterned using electron beam lithography (EBL). Reflection of photons from the NSL-patterned nanowire array was used as a measure of the effect of defects present in the structure. Experimentally, we show that GaAs nanowires as short as 130 nm show reflection of <10% over the visible range of the solar spectrum. Our results indicate that a highly ordered nanowire structure is not necessary: despite the "defects" present in NSL-patterned nanowire arrays, their optical performance is similar to "defect-free" structures patterned by more costly, time-consuming EBL methods. Our scalable approach for synthesis of vertical semiconducting nanowires can have application in high-throughput and low-cost optoelectronic devices, including solar cells.

  7. Characterization and Optical Properties of the Single Crystalline SnS Nanowire Arrays

    Yue GH

    2009-01-01

    Full Text Available Abstract The SnS nanowire arrays have been successfully synthesized by the template-assisted pulsed electrochemical deposition in the porous anodized aluminum oxide template. The investigation results showed that the as-synthesized nanowires are single crystalline structures and they have a highly preferential orientation. The ordered SnS nanowire arrays are uniform with a diameter of 50 nm and a length up to several tens of micrometers. The synthesized SnS nanowires exhibit strong absorption in visible and near-infrared spectral region and the direct energy gapE gof SnS nanowires is 1.59 eV.

  8. Multi-spectral optical absorption in substrate-free nanowire arrays

    Zhang, Junpeng; Chia, Andrew; Boulanger, Jonathan; LaPierre, Ray, E-mail: lapierr@mcmaster.ca [Department of Engineering Physics, McMaster University, 1280 Main St. West, Hamilton, Ontario L8S 4L7 (Canada); Dhindsa, Navneet; Khodadad, Iman; Saini, Simarjeet [Department of Electrical and Computer Engineering, University of Waterloo, 200 University Ave West, Waterloo, Ontario N2L 3G1 (Canada); Waterloo Institute of Nanotechnology, University of Waterloo, 200 University Ave West, Waterloo, Ontario N2L 3G1 (Canada)

    2014-09-22

    A method is presented of fabricating gallium arsenide (GaAs) nanowire arrays of controlled diameter and period by reactive ion etching of a GaAs substrate containing an indium gallium arsenide (InGaP) etch stop layer, allowing the precise nanowire length to be controlled. The substrate is subsequently removed by selective etching, using the same InGaP etch stop layer, to create a substrate-free GaAs nanowire array. The optical absorptance of the nanowire array was then directly measured without absorption from a substrate. We directly observe absorptance spectra that can be tuned by the nanowire diameter, as explained with rigorous coupled wave analysis. These results illustrate strong optical absorption suitable for nanowire-based solar cells and multi-spectral absorption for wavelength discriminating photodetectors. The solar-weighted absorptance above the bandgap of GaAs was 94% for a nanowire surface coverage of only 15%.

  9. Large-scale fabrication of vertically aligned ZnO nanowire arrays

    Wang, Zhong L; Das, Suman; Xu, Sheng; Yuan, Dajun; Guo, Rui; Wei, Yaguang; Wu, Wenzhuo

    2013-02-05

    In a method for growing a nanowire array, a photoresist layer is placed onto a nanowire growth layer configured for growing nanowires therefrom. The photoresist layer is exposed to a coherent light interference pattern that includes periodically alternately spaced dark bands and light bands along a first orientation. The photoresist layer exposed to the coherent light interference pattern along a second orientation, transverse to the first orientation. The photoresist layer developed so as to remove photoresist from areas corresponding to areas of intersection of the dark bands of the interference pattern along the first orientation and the dark bands of the interference pattern along the second orientation, thereby leaving an ordered array of holes passing through the photoresist layer. The photoresist layer and the nanowire growth layer are placed into a nanowire growth environment, thereby growing nanowires from the nanowire growth layer through the array of holes.

  10. Phosphorus Doped Zn 1- x Mg x O Nanowire Arrays

    Lin, S. S.

    2009-11-11

    We demonstrate the growth of phosphorus doped Zn 1-xMg xO nanowire (NW) using pulsed laser deposition. For the first time, p-type Zn 0.92Mg 0.08O:P NWs are likely obtained In reference to atomic force microscopy based piezoelectric output measurements, X-ray photoelectron spectroscopy, and the transport property between the NWs and a n-type ZnO film. A shallow acceptor level of ∼140 meV Is identified by temperaturedependent photoluminescence. A piezoelectric output of 60 mV on average has been received using the doped NWs. Besides a control on NW aspect ratio and density, band gap engineering has also been achieved by alloying with Mg to a content of x = 0.23. The alloyed NWs with controllable conductivity type have potential application In high-efficiency all-ZnO NWs based LED, high-output ZnO nanogenerator, and other optical or electrical devices. © 2009 American Chemical Society.

  11. Core-shell heterojunction of silicon nanowire arrays and carbon quantum dots for photovoltaic devices and self-driven photodetectors.

    Xie, Chao; Nie, Biao; Zeng, Longhui; Liang, Feng-Xia; Wang, Ming-Zheng; Luo, Linbao; Feng, Mei; Yu, Yongqiang; Wu, Chun-Yan; Wu, Yucheng; Yu, Shu-Hong

    2014-04-22

    Silicon nanostructure-based solar cells have lately intrigued intensive interest because of their promising potential in next-generation solar energy conversion devices. Herein, we report a silicon nanowire (SiNW) array/carbon quantum dot (CQD) core-shell heterojunction photovoltaic device by directly coating Ag-assisted chemical-etched SiNW arrays with CQDs. The heterojunction with a barrier height of 0.75 eV exhibited excellent rectifying behavior with a rectification ratio of 10(3) at ±0.8 V in the dark and power conversion efficiency (PCE) as high as 9.10% under AM 1.5G irradiation. It is believed that such a high PCE comes from the improved optical absorption as well as the optimized carrier transfer and collection capability. Furthermore, the heterojunction could function as a high-performance self-driven visible light photodetector operating in a wide switching wavelength with good stability, high sensitivity, and fast response speed. It is expected that the present SiNW array/CQD core-shell heterojunction device could find potential applications in future high-performance optoelectronic devices.

  12. Photovoltaic Performance of a Nanowire/Quantum Dot Hybrid Nanostructure Array Solar Cell.

    Wu, Yao; Yan, Xin; Zhang, Xia; Ren, Xiaomin

    2018-02-23

    An innovative solar cell based on a nanowire/quantum dot hybrid nanostructure array is designed and analyzed. By growing multilayer InAs quantum dots on the sidewalls of GaAs nanowires, not only the absorption spectrum of GaAs nanowires is extended by quantum dots but also the light absorption of quantum dots is dramatically enhanced due to the light-trapping effect of the nanowire array. By incorporating five layers of InAs quantum dots into a 500-nm high-GaAs nanowire array, the power conversion efficiency enhancement induced by the quantum dots is six times higher than the power conversion efficiency enhancement in thin-film solar cells which contain the same amount of quantum dots, indicating that the nanowire array structure can benefit the photovoltaic performance of quantum dot solar cells.

  13. Electrochemical fabrication of CdS/Co nanowire arrays in porous aluminum oxide templates

    Yoon, C H

    2002-01-01

    A procedure for preparing semiconductor/metal nanowire arrays is described, based on a template method which entails electrochemical deposition into nanometer-wide parallel pores of anodic aluminum oxide films on aluminum. Aligned CdS/Co heterostructured nanowires have been prepared by ac electrodeposition in the anodic aluminum oxide templates. By varying the preparation conditions, a variety of CdS/Co nanowire arrays were fabricated, whose dimensional properties could be adjusted.

  14. MnO{sub 2} nanotube and nanowire arrays by electrochemical deposition for supercapacitors

    Xia, Hui; Feng, Jinkui; Wang, Hailong; Lai, Man On; Lu, Li [Department of Mechanical Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117576 (Singapore)

    2010-07-01

    Highly ordered MnO{sub 2} nanotube and nanowire arrays are successfully synthesized via a electrochemical deposition technique using porous alumina templates. The morphologies and microstructures of the MnO{sub 2} nanotube and nanowire arrays are investigated by field emission scanning electron microscopy and transmission electron microscopy. Electrochemical characterization demonstrates that the MnO{sub 2} nanotube array electrode has superior capacitive behaviour to that of the MnO{sub 2} nanowire array electrode. In addition to high specific capacitance, the MnO{sub 2} nanotube array electrode also exhibits good rate capability and good cycling stability, which makes it promising candidate for supercapacitors. (author)

  15. Piezo-generator integrating a vertical array of GaN nanowires.

    Jamond, N; Chrétien, P; Houzé, F; Lu, L; Largeau, L; Maugain, O; Travers, L; Harmand, J C; Glas, F; Lefeuvre, E; Tchernycheva, M; Gogneau, N

    2016-08-12

    We demonstrate the first piezo-generator integrating a vertical array of GaN nanowires (NWs). We perform a systematic multi-scale analysis, going from single wire properties to macroscopic device fabrication and characterization, which allows us to establish for GaN NWs the relationship between the material properties and the piezo-generation, and to propose an efficient piezo-generator design. The piezo-conversion of individual MBE-grown p-doped GaN NWs in a dense array is assessed by atomic force microscopy (AFM) equipped with a Resiscope module yielding an average output voltage of 228 ± 120 mV and a maximum value of 350 mV generated per NW. In the case of p-doped GaN NWs, the piezo-generation is achieved when a positive piezo-potential is created inside the nanostructures, i.e. when the NWs are submitted to compressive deformation. The understanding of the piezo-generation mechanism in our GaN NWs, gained from AFM analyses, is applied to design a piezo-generator operated under compressive strain. The device consists of NW arrays of several square millimeters in size embedded into spin-on glass with a Schottky contact for rectification and collection of piezo-generated carriers. The generator delivers a maximum power density of ∼12.7 mW cm(-3). This value sets the new state of the art for piezo-generators based on GaN NWs and more generally on nitride NWs, and offers promising prospects for the use of GaN NWs as high-efficiency ultra-compact energy harvesters.

  16. Cell membrane conformation at vertical nanowire array interface revealed by fluorescence imaging

    Berthing, Trine; Bonde, Sara; Rostgaard, Katrine R; Martinez, Karen L; Madsen, Morten Hannibal; Sørensen, Claus B; Nygård, Jesper

    2012-01-01

    The perspectives offered by vertical arrays of nanowires for biosensing applications in living cells depend on the access of individual nanowires to the cell interior. Recent results on electrical access and molecular delivery suggest that direct access is not always obtained. Here, we present a generic approach to directly visualize the membrane conformation of living cells interfaced with nanowire arrays, with single nanowire resolution. The method combines confocal z-stack imaging with an optimized cell membrane labelling strategy which was applied to HEK293 cells interfaced with 2–11 μm long and 3–7 μm spaced nanowires with various surface coatings (bare, aminosilane-coated or polyethyleneimine-coated indium arsenide). We demonstrate that, for all commonly used nanowire lengths, spacings and surface coatings, nanowires generally remain enclosed in a membrane compartment, and are thereby not in direct contact with the cell interior. (paper)

  17. Synthesis and high catalytic properties of mesoporous Pt nanowire array by novel conjunct template method

    Zhong, Yi; Xu, Cai-Ling; Kong, Ling-Bin; Li, Hu-Lin

    2008-12-01

    A novel conjunct template method for fabricating mesoporous Pt nanowire array through direct current (DC) electrodeposition of Pt into the pores of anodic aluminum oxide (AAO) template on Ti/Si substrate from hexagonal structured lyotropic liquid crystalline phase is demonstrated in this paper. The morphology and structure of as-prepared Pt nanowire array are characterized by field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM) and X-ray diffraction (XRD). The electrocatalytic properties of Pt nanowire array for methanol are also investigated in detail. The results indicate that Pt nanowire array has the unique mesoporous structure of approximate 40-50 nm in diameter, which resulted in the high surface area and greatly improved electrocatalytic activity for methanol. The mesoporous Pt nanowire array synthesized by the new conjunct template method has a very promising application in portable fuel cell power sources.

  18. Improved sensing characteristics of dual-gate transistor sensor using silicon nanowire arrays defined by nanoimprint lithography

    Lim, Cheol-Min; Lee, In-Kyu; Lee, Ki Joong; Oh, Young Kyoung; Shin, Yong-Beom; Cho, Won-Ju

    2017-12-01

    This work describes the construction of a sensitive, stable, and label-free sensor based on a dual-gate field-effect transistor (DG FET), in which uniformly distributed and size-controlled silicon nanowire (SiNW) arrays by nanoimprint lithography act as conductor channels. Compared to previous DG FETs with a planar-type silicon channel layer, the constructed SiNW DG FETs exhibited superior electrical properties including a higher capacitive-coupling ratio of 18.0 and a lower off-state leakage current under high-temperature stress. In addition, while the conventional planar single-gate (SG) FET- and planar DG FET-based pH sensors showed the sensitivities of 56.7 mV/pH and 439.3 mV/pH, respectively, the SiNW DG FET-based pH sensors showed not only a higher sensitivity of 984.1 mV/pH, but also a lower drift rate of 0.8% for pH-sensitivity. This demonstrates that the SiNW DG FETs simultaneously achieve high sensitivity and stability, with significant potential for future biosensing applications.

  19. Vertical group III-V nanowires on si, heterostructures, flexible arrays and fabrication

    Wang, Deli; Soci, Cesare; Bao, Xinyu; Wei, Wei; Jing, Yi; Sun, Ke

    2015-01-13

    Embodiments of the invention provide a method for direct heteroepitaxial growth of vertical III-V semiconductor nanowires on a silicon substrate. The silicon substrate is etched to substantially completely remove native oxide. It is promptly placed in a reaction chamber. The substrate is heated and maintained at a growth temperature. Group III-V precursors are flowed for a growth time. Preferred embodiment vertical Group III-V nanowires on silicon have a core-shell structure, which provides a radial homojunction or heterojunction. A doped nanowire core is surrounded by a shell with complementary doping. Such can provide high optical absorption due to the long optical path in the axial direction of the vertical nanowires, while reducing considerably the distance over which carriers must diffuse before being collected in the radial direction. Alloy composition can also be varied. Radial and axial homojunctions and heterojunctions can be realized. Embodiments provide for flexible Group III-V nanowire structures. An array of Group III-V nanowire structures is embedded in polymer. A fabrication method forms the vertical nanowires on a substrate, e.g., a silicon substrate. Preferably, the nanowires are formed by the preferred methods for fabrication of Group III-V nanowires on silicon. Devices can be formed with core/shell and core/multi-shell nanowires and the devices are released from the substrate upon which the nanowires were formed to create a flexible structure that includes an array of vertical nanowires embedded in polymer.

  20. In situ x-ray diffraction study on AgI nanowire arrays

    Wang Yinhai; Ye Changhui; Wang Guozhong; Zhang Lide; Liu Yanmei; Zhao Zhongyan

    2003-01-01

    The AgI nanowire arrays were prepared in the ordered porous alumina membrane by an electrochemical method. Transmission electron microscopy observation shows that the AgI nanowires are located in the channels of the alumina membrane. In situ x-ray diffractions show that the nanowire arrays possess hexagonal close-packed structure (β-AgI) at 293 K, orienting along the (002) plane, whereas at 473 K, the nanowire arrays possess a body-centered cubic structure (α-AgI), orienting along the (110) plane. The AgI nanowire arrays exhibit a negative thermal expansion property from 293 to 433 K, and a higher transition temperature from the β to α phase. We ascribe the negative thermal expansion behavior to the phase transition from the β to α phase, and the elevated transition temperature to the radial restriction by the channels of alumina membrane

  1. Silver nanowire/polymer composite soft conductive film fabricated by large-area compatible coating for flexible pressure sensor array

    Chen, Sujie; Li, Siying; Peng, Sai; Huang, Yukun; Zhao, Jiaqing; Tang, Wei; Guo, Xiaojun

    2018-01-01

    Soft conductive films composed of a silver nanowire (AgNW) network, a neutral-pH PEDOT:PSS over-coating layer and a polydimethylsiloxane (PDMS) elastomer substrate are fabricated by large area compatible coating processes. The neutral-pH PEDOT:PSS layer is shown to be able to significantly improve the conductivity, stretchability and air stability of the conductive films. The soft conductive films are patterned using a simple maskless patterning approach to fabricate an 8 × 8 flexible pressure sensor array. It is shown that such soft conductive films can help to improve the sensitivity and reduce the signal crosstalk over the pressure sensor array. Project supported by the Science and Technology Commission of Shanghai Municipality (No. 16JC1400603).

  2. Reduction of Cr(VI) to Cr(III) using silicon nanowire arrays under visible light irradiation

    Fellahi, Ouarda [Institut d' Electronique, de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Avenue Poincaré—BP 70478, 59652 Villeneuve d' Ascq Cedex (France); Centre de Recherche en Technologie des Semi-conducteurs pour l' Energétique-CRTSE 02, Bd Frantz Fanon, BP. 140, Alger 7 Merveilles (Algeria); Barras, Alexandre [Institut d' Electronique, de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Avenue Poincaré—BP 70478, 59652 Villeneuve d' Ascq Cedex (France); Pan, Guo-Hui [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 3888 Dong Nanhu Road, Changchun 130033 (China); Coffinier, Yannick [Institut d' Electronique, de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Avenue Poincaré—BP 70478, 59652 Villeneuve d' Ascq Cedex (France); Hadjersi, Toufik [Centre de Recherche en Technologie des Semi-conducteurs pour l' Energétique-CRTSE 02, Bd Frantz Fanon, BP. 140, Alger 7 Merveilles (Algeria); Maamache, Mustapha [Laboratoire de Physique Quantique et Systèmes Dynamiques, Département de Physique, Université de Sétif, Sétif 19000 (Algeria); Szunerits, Sabine [Institut d' Electronique, de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Avenue Poincaré—BP 70478, 59652 Villeneuve d' Ascq Cedex (France); and others

    2016-03-05

    Highlights: • Cr(VI) reduction to Cr(III) using silicon nanowires decorated with Cu nanoparticles. • The reduction takes place at room temperature and neutral pH under visible light. • The photocatalytic reduction was enhanced by addition of adipic or citric acid. - Abstract: We report an efficient visible light-induced reduction of hexavalent chromium Cr(VI) to trivalent Cr(III) by direct illumination of an aqueous solution of potassium dichromate (K{sub 2}Cr{sub 2}O{sub 7}) in the presence of hydrogenated silicon nanowires (H-SiNWs) or silicon nanowires decorated with copper nanoparticles (Cu NPs-SiNWs) as photocatalyst. The SiNW arrays investigated in this study were prepared by chemical etching of crystalline silicon in HF/AgNO{sub 3} aqueous solution. The Cu NPs were deposited on SiNW arrays via electroless deposition technique. Visible light irradiation of an aqueous solution of K{sub 2}Cr{sub 2}O{sub 7} (10{sup −4} M) in presence of H-SiNWs showed that these substrates were not efficient for Cr(VI) reduction. The reduction efficiency achieved was less than 10% after 120 min irradiation at λ > 420 nm. Addition of organic acids such as citric or adipic acid in the solution accelerated Cr(VI) reduction in a concentration-dependent manner. Interestingly, Cu NPs-SiNWs was found to be a very efficient interface for the reduction of Cr(VI) to Cr(III) in absence of organic acids. Almost a full reduction of Cr(VI) was achieved by direct visible light irradiation for 140 min using this photocatalyst.

  3. Study of residual gas adsorption on GaN nanowire arrays photocathode

    Xia, Sihao; Liu, Lei, E-mail: liu1133_cn@sina.com.cn; Diao, Yu; Kong, Yike

    2017-05-01

    Highlights: • H{sub 2}O is more easily to absorb on the nanowire surface. • The work function increase after residual gas adsorption. • Bandgaps of the nanowire increase slightly. • Absorption coefficient is reduced and moves to higher energy side. - Abstract: In order to find out the influences of residual gas on GaN nanowire arrays photocathode, the optoelectronic properties of adsorption system are calculated on the basis of first principles. Results suggest that the residual gas adsorption will increase the work function and introduce a dipole moment with a direction from the nanowire to the adsorbates. The surface structures are changed and electrons transfer from nanowire to gas molecule. The bandgaps are enhanced after adsorption. Besides, the peak of absorption coefficients is reduced and moves to higher energy side. It is discovered that residual gas will drastically degrade the characteristics and lifetime of GaN nanowire arrays photocathode.

  4. Uniaxial Magnetization Performance of Textured Fe Nanowire Arrays Electrodeposited by a Pulsed Potential Deposition Technique

    Neetzel, C.; Ohgai, T.; Yanai, T.; Nakano, M.; Fukunaga, H.

    2017-11-01

    Textured ferromagnetic Fe nanowire arrays were electrodeposited using a rectangular-pulsed potential deposition technique into anodized aluminum oxide nanochannels. During the electrodeposition of Fe nanowire arrays at a cathodic potential of - 1.2 V, the growth rate of the nanowires was ca. 200 nm s-1. The aspect ratio of Fe nanowires with a diameter of 30 ± 5 nm reached ca. 2000. The long axis of Fe nanowires corresponded with the direction when a large overpotential during the on-time pulse was applied, whereas it orientated to the direction under the potentiostatic condition with a small overpotential. By shifting the on-time cathode potential up to - 1.8 V, the texture coefficient for the (200) plane, TC200, reached up to 1.94. Perpendicular magnetization performance was observed in Fe nanowire arrays. With increasing TC200, the squareness of Fe nanowire arrays increased up to 0.95 with the coercivity maintained at 1.4 kOe at room temperature. This research result has opened a novel possibility of Fe nanowire arrays that can be applied for a new permanent magnetic material without rare-earth metals.

  5. Efficiency enhancement of InP nanowire solar cells by surface cleaning

    Cui, Y.; Wang, J.; Plissard, S.R.; Cavalli, A.; Vu, T.T.T.; Veldhoven, van P.J.; Gao, L.; Trainor, M.J.; Verheijen, M.A.; Haverkort, J.E.M.; Bakkers, E.P.A.M.

    2013-01-01

    We demonstrate an efficiency enhancement of an InP nanowire (NW) axial p–n junction solar cell by cleaning the NW surface. NW arrays were grown with in situ HCl etching on an InP substrate patterned by nanoimprint lithography, and the NWs surfaces were cleaned after growth by piranha etching. We

  6. Indium antimonide nanowires arrays for promising thermoelectric converters

    Gorokh G. G.

    2015-02-01

    Full Text Available The authors have theoretically substantiated the possibility to create promising thermoelectric converters based on quantum wires. The calculations have shown that the use of quantum wires with lateral dimensions smaller than quantum confinement values and high concentration and mobility of electrons, can lead to a substantial cooling of one of the contacts up to tens of degrees and to the heating of the other. The technological methods of manufacturing of indium antimonide nanowires arrays with high aspect ratio of the nanowire diameters to their length in the modified nanoporous anodic alumina matrixes were developed and tested. The microstructure and composition of the formed nanostructures were investigated. The electron microscopy allowed establishing that within each pore nanowires are formed with diameters of 35 nm and a length of 35 microns (equal to the matrix thickness. The electron probe x-ray microanalysis has shown that the atomic ratio of indium and antimony in the semiconductor nanostructures amounted to 38,26% and 61,74%, respectively. The current-voltage measurement between the upper and lower contacts of Cu/InSb/Cu structure (1 mm2 has shown that at 2.82 V negative voltage at the emitter contact, current density is 129,8 A/cм2, and the collector contact is heated up to 75 degrees during 150 sec. Thus, the experimental results confirmed the theoretical findings that the quantum wire systems can be used to create thermoelectric devices, which can be widely applied in electronics, in particular, for cooling integrated circuits (processors, thermal controlling of the electrical circuits by changing voltage value.

  7. Resonant absorption in semiconductor nanowires and nanowire arrays: Relating leaky waveguide modes to Bloch photonic crystal modes

    Fountaine, Katherine T., E-mail: kfountai@caltech.edu [Department of Chemistry and Chemical Engineering, California Institute of Technology, 1200 E. California Blvd., Pasadena, California 91125 (United States); Joint Center for Artificial Photosynthesis, California Institute of Technology, 1200 E. California Blvd., Pasadena, California 91125 (United States); Whitney, William S. [Joint Center for Artificial Photosynthesis, California Institute of Technology, 1200 E. California Blvd., Pasadena, California 91125 (United States); Department of Physics, California Institute of Technology, 1200 E. California Blvd., Pasadena, California 91125 (United States); Atwater, Harry A. [Joint Center for Artificial Photosynthesis, California Institute of Technology, 1200 E. California Blvd., Pasadena, California 91125 (United States); Department of Applied Physics and Materials Science, California Institute of Technology, 1200 E. California Blvd., Pasadena, California 91125 (United States)

    2014-10-21

    We present a unified framework for resonant absorption in periodic arrays of high index semiconductor nanowires that combines a leaky waveguide theory perspective and that of photonic crystals supporting Bloch modes, as array density transitions from sparse to dense. Full dispersion relations are calculated for each mode at varying illumination angles using the eigenvalue equation for leaky waveguide modes of an infinite dielectric cylinder. The dispersion relations along with symmetry arguments explain the selectivity of mode excitation and spectral red-shifting of absorption for illumination parallel to the nanowire axis in comparison to perpendicular illumination. Analysis of photonic crystal band dispersion for varying array density illustrates that the modes responsible for resonant nanowire absorption emerge from the leaky waveguide modes.

  8. Stabilization mechanisms for information stored in magnetic nanowire arrays

    Cisternas, Eduardo, E-mail: eduardo.cisternas@gmail.com [Departamento de Ciencias Físicas, Universidad de La Frontera, Casilla 54-D, Temuco (Chile); Faúndez, Julián [Departamento de Ciencias Físicas, Universidad de La Frontera, Casilla 54-D, Temuco (Chile); Vogel, Eugenio E. [Departamento de Ciencias Físicas, Universidad de La Frontera, Casilla 54-D, Temuco (Chile); Center for the Development of Nanoscience and Nanotechnology (CEDENNA), 9170124 Santiago (Chile)

    2017-03-15

    The durability of the stored information in magnetic systems is one important feature in firmware applications such as security codes, magnetic keys and other similar products. In the present paper we discuss two different ways of preserving patterns in the set of magnetic wires trapped in the porous membranes used to produce them. One of the techniques is the inscription of an opposite magnetic band of about 1/3 the width of the stored pattern which minimizes the repulsive energy among the ferromagnetic cylinders still leaving a potent magnetic signal to be read. The other technique makes use of segmented nanowires which present a competition of repulsive energy of segments within the same layer while the interaction is attractive with the closer segments of the other layer; such a competition can lead to stabilization if the geometrical parameters are properly controlled. The first technique is cheaper and faster to implement, while the second technique needs a more complete fabrication process but can lead to more durable stored information. - Highlights: • Stability of ferromagnetic patterns inscribed on magnetic nanowires arrays. • Information prevalence and stabilization mechanisms. • Applicability to fimware, security codes and magnetic keys.

  9. Piezo-Phototronic Matrix via a Nanowire Array.

    Zhang, Yang; Zhai, Junyi; Wang, Zhong Lin

    2017-12-01

    Piezoelectric semiconductors, such as ZnO and GaN, demonstrate multiproperty coupling effects toward various aspects of mechanical, electrical, and optical excitation. In particular, the three-way coupling among semiconducting, photoexcitation, and piezoelectric characteristics in wurtzite-structured semiconductors is established as a new field, which was first coined as piezo-phototronics by Wang in 2010. The piezo-phototronic effect can controllably modulate the charge-carrier generation, separation, transport, and/or recombination in optical-electronic processes by modifying the band structure at the metal-semiconductor or semiconductor-semiconductor heterojunction/interface. Here, the progress made in using the piezo-phototronic effect for enhancing photodetectors, pressure sensors, light-emitting diodes, and solar cells is reviewed. In comparison with previous works on a single piezoelectric semiconducting nanowire, piezo-phototronic nanodevices built using nanowire arrays provide a promising platform for fabricating integrated optoelectronics with the realization of high-spatial-resolution imaging and fast responsivity. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. A versatile method to grow localized arrays of nanowires for highly sensitive capacitive devices

    Antohe, V.A.; Radu, A.; Yunus, S.

    2008-01-01

    We propose a new approach to increase the detection efficiency of the capacitive sensing devices, by growing vertically aligned nanowires arrays, localized and confined on small interdigited electrodes structures. The metallic tracks are made using optical lithography, and the nanowires are reali...

  11. Stable field emission from arrays of vertically aligned free-standing metallic nanowires

    Xavier, S.; Mátéfi-Tempfli, Stefan; Ferain, E.

    2008-01-01

    We present a fully elaborated process to grow arrays of metallic nanowires with controlled geometry and density, based on electrochemical filling of nanopores in track-etched templates. Nanowire growth is performed at room temperature, atmospheric pressure and is compatible with low cost...

  12. Solution processed bismuth sulfide nanowire array core/silver shuffle shell solar cells

    Cao, Y.; Bernechea, M.; Maclachlan, A.; Zardetto, V.; Creatore, M.; Haque, S.A.; Konstantatos, G.

    2015-01-01

    Low bandgap inorganic semiconductor nanowires have served as building blocks in solution processed solar cells to improve their power conversion capacity and reduce fabrication cost. In this work, we first reported bismuth sulfide nanowire arrays grown from colloidal seeds on a transparent

  13. A top-down approach to fabrication of high quality vertical heterostructure nanowire arrays

    Wang, Hua; Sun, Minghua; Ding, K.; Hill, M.T.; Ning, C.Z.

    2011-01-01

    We demonstrate a novel top-down approach for fabricating nanowires with unprecedented complexity and optical quality by taking advantage of a nanoscale self-masking effect. We realized vertical arrays of nanowires of 20-40 nm in diameter with 16 segments of complex longitudinal InGaAsP/InP

  14. Crosstalk analysis of silicon-on-insulator nanowire-arrayed waveguide grating

    Li Kai-Li; An Jun-Ming; Zhang Jia-Shun; Wang Yue; Wang Liang-Liang; Li Jian-Guang; Wu Yuan-Da; Yin Xiao-Jie; Hu Xiong-Wei

    2016-01-01

    The factors influencing the crosstalk of silicon-on-insulator (SOI) nanowire arrayed waveguide grating (AWG) are analyzed using the transfer function method. The analysis shows that wider and thicker arrayed waveguides, outsider fracture of arrayed waveguide, and larger channel space, could mitigate the deterioration of crosstalk. The SOI nanowire AWGs with different arrayed waveguide widths are fabricated by using deep ultraviolet lithography (DUV) and inductively coupled plasma etching (ICP) technology. The measurement results show that the crosstalk performance is improved by about 7 dB through adopting 800 nm arrayed waveguide width. (paper)

  15. Oxidative fabrication of patterned, large, non-flaking CuO nanowire arrays

    Mumm, F; Sikorski, P

    2011-01-01

    We report a simple and fast approach to fabricate large, non-flaking arrays of CuO nanowires by oxidizing thin copper substrates in air. Oxidative CuO nanowire growth is commonly accompanied by oxide layer flaking due to stress at the copper-copper oxide interface. Using thin substrates is shown to prevent this flaking by introducing favourable material thickness ratios in the samples after oxidation. Additionally, thin foils allow larger scale topographic patterns to be transferred from an underlying mould to realize non-flat, nanowire-decorated surfaces. Further patterning is possible by electrodeposition of a nickel layer, which restricts nanowire growth to specific areas of the sample.

  16. Localized temperature and chemical reaction control in nanoscale space by nanowire array.

    Jin, C Yan; Li, Zhiyong; Williams, R Stanley; Lee, K-Cheol; Park, Inkyu

    2011-11-09

    We introduce a novel method for chemical reaction control with nanoscale spatial resolution based on localized heating by using a well-aligned nanowire array. Numerical and experimental analysis shows that each individual nanowire could be selectively and rapidly Joule heated for local and ultrafast temperature modulation in nanoscale space (e.g., maximum temperature gradient 2.2 K/nm at the nanowire edge; heating/cooling time chemical reactions such as polymer decomposition/cross-linking and direct and localized hydrothermal synthesis of metal oxide nanowires were demonstrated.

  17. Superconducting properties of Pb82Bi18 films controlled by ferromagnetic nanowire arrays

    Ye Zuxin; Lyuksyutov, Igor F; Wu Wenhao; Naugle, Donald G

    2011-01-01

    The superconducting properties of Pb 82 Bi 18 alloy films deposited on ferromagnetic nanowire arrays have been investigated. Ferromagnetic Co or Ni nanowires are first electroplated into the columnar pores of anodic aluminum oxide (AAO) membranes. Superconducting Pb 82 Bi 18 films are then quench condensed onto the polished surface of the AAO membranes filled with magnetic nanowires. A strong dependence of the Pb 82 Bi 18 superconducting properties on the ratio of the superconducting film thickness to the magnetic nanowire diameter and material variety was observed.

  18. Superconducting properties of Pb82Bi18 films controlled by ferromagnetic nanowire arrays

    Ye, Zuxin; Lyuksyutov, Igor F.; Wu, Wenhao; Naugle, Donald G.

    2011-02-01

    The superconducting properties of Pb82Bi18 alloy films deposited on ferromagnetic nanowire arrays have been investigated. Ferromagnetic Co or Ni nanowires are first electroplated into the columnar pores of anodic aluminum oxide (AAO) membranes. Superconducting Pb82Bi18 films are then quench condensed onto the polished surface of the AAO membranes filled with magnetic nanowires. A strong dependence of the Pb82Bi18 superconducting properties on the ratio of the superconducting film thickness to the magnetic nanowire diameter and material variety was observed.

  19. Superconducting Properties of Lead-Bismuth Films Controlled by Ferromagnetic Nanowire Arrays

    Ye, Zuxin; Lyuksyutov, Igor F.; Wu, Wenhao; Naugle, Donald G.

    2011-03-01

    Superconducting properties of lead-bismuth (82% Pb and 18% Bi) alloy films deposited on ferromagnetic nanowire arrays have been investigated. Ferromagnetic Co or Ni nanowires are first electroplated into the columnar pores of anodic aluminum oxide (AAO) membranes. Superconducting Pb 82 Bi 18 films are then quench-condensed onto the polished surface of the AAO membranes filled with magnetic nanowires. A strong dependence of the Pb 82 Bi 18 superconducting properties on the ratio of the superconducting film thickness to the magnetic nanowire diameter and the material variety was observed.

  20. Template-assisted fabrication of tin and antimony based nanowire arrays

    Zaraska, Leszek; Kurowska, Elżbieta; Sulka, Grzegorz D.; Jaskuła, Marian

    2012-10-01

    Antimony nanowires with diameters ranging from 35 nm to 320 nm were successfully prepared by simple, galvanostatic electrodeposition inside the pores of anodic alumina membranes from a citrate based electrolyte. The use of the potassium antimonyl tartrate electrolyte for electrodeposition results in the formation of Sb/Sb2O3 nanowires. The structural features of the nanowire arrays were investigated by FE-SEM, and the nanowire composition was confirmed by EDS and XRD measurements. A distinct peak at about 27.5° in the XRD pattern recorded for nanowires formed in the tartrate electrolyte was attributed to the presence of co-deposited Sb2O3. Three types of dense arrays of Sn-SnSb nanowires with diameters ranging from 82 nm to 325 nm were also synthesized by DC galvanostatic electrodeposition into the anodic aluminum oxide (AAO) membranes for the first time. Only Sn and SnSb peaks appeared in the XRD pattern and both phases seem to have a relatively high degree of crystallinity. The influence of current density applied during electrodeposition on the composition of nanowires was investigated. It was found that the Sb content in fabricated nanowires decreases with increasing current density. The diameters of all synthesized nanowires roughly correspond to the dimensions of the nanochannels of AAO templates used for electrodeposition.

  1. A general melt-injection-decomposition route to oriented metal oxide nanowire arrays

    Han, Dongqiang; Zhang, Xinwei; Hua, Zhenghe; Yang, Shaoguang, E-mail: sgyang@nju.edu.cn

    2016-12-30

    Highlights: • A general melt-injection-decomposition (MID) route is proposed for the fabrication of oriented metal oxide nanowire arrays. • Four kinds of metal oxide (CuO, Mn{sub 2}O{sub 3}, Co{sub 3}O{sub 4} and Cr{sub 2}O{sub 3}) nanowire arrays have been realized as examples through the developed MID route. • The mechanism of the developed MID route is discussed using Thermogravimetry and Differential Thermal Analysis technique. • The MID route is a versatile, simple, facile and effective way to prepare different kinds of oriented metal oxide nanowire arrays in the future. - Abstract: In this manuscript, a general melt-injection-decomposition (MID) route has been proposed and realized for the fabrication of oriented metal oxide nanowire arrays. Nitrate was used as the starting materials, which was injected into the nanopores of the anodic aluminum oxide (AAO) membrane through the capillarity action in its liquid state. At higher temperature, the nitrate decomposed into corresponding metal oxide within the nanopores of the AAO membrane. Oriented metal oxide nanowire arrays were formed within the AAO membrane as a result of the confinement of the nanopores. Four kinds of metal oxide (CuO, Mn{sub 2}O{sub 3}, Co{sub 3}O{sub 4} and Cr{sub 2}O{sub 3}) nanowire arrays are presented here as examples fabricated by this newly developed process. X-ray diffraction, scanning electron microscopy and transmission electron microscopy studies showed clear evidence of the formations of the oriented metal oxide nanowire arrays. Formation mechanism of the metal oxide nanowire arrays is discussed based on the Thermogravimetry and Differential Thermal Analysis measurement results.

  2. A general melt-injection-decomposition route to oriented metal oxide nanowire arrays

    Han, Dongqiang; Zhang, Xinwei; Hua, Zhenghe; Yang, Shaoguang

    2016-01-01

    Highlights: • A general melt-injection-decomposition (MID) route is proposed for the fabrication of oriented metal oxide nanowire arrays. • Four kinds of metal oxide (CuO, Mn_2O_3, Co_3O_4 and Cr_2O_3) nanowire arrays have been realized as examples through the developed MID route. • The mechanism of the developed MID route is discussed using Thermogravimetry and Differential Thermal Analysis technique. • The MID route is a versatile, simple, facile and effective way to prepare different kinds of oriented metal oxide nanowire arrays in the future. - Abstract: In this manuscript, a general melt-injection-decomposition (MID) route has been proposed and realized for the fabrication of oriented metal oxide nanowire arrays. Nitrate was used as the starting materials, which was injected into the nanopores of the anodic aluminum oxide (AAO) membrane through the capillarity action in its liquid state. At higher temperature, the nitrate decomposed into corresponding metal oxide within the nanopores of the AAO membrane. Oriented metal oxide nanowire arrays were formed within the AAO membrane as a result of the confinement of the nanopores. Four kinds of metal oxide (CuO, Mn_2O_3, Co_3O_4 and Cr_2O_3) nanowire arrays are presented here as examples fabricated by this newly developed process. X-ray diffraction, scanning electron microscopy and transmission electron microscopy studies showed clear evidence of the formations of the oriented metal oxide nanowire arrays. Formation mechanism of the metal oxide nanowire arrays is discussed based on the Thermogravimetry and Differential Thermal Analysis measurement results.

  3. Atomic Layer Deposition of Nickel on ZnO Nanowire Arrays for High-Performance Supercapacitors.

    Ren, Qing-Hua; Zhang, Yan; Lu, Hong-Liang; Wang, Yong-Ping; Liu, Wen-Jun; Ji, Xin-Ming; Devi, Anjana; Jiang, An-Quan; Zhang, David Wei

    2018-01-10

    A novel hybrid core-shell structure of ZnO nanowires (NWs)/Ni as a pseudocapacitor electrode was successfully fabricated by atomic layer deposition of a nickel shell, and its capacitive performance was systemically investigated. Transmission electron microscopy and X-ray photoelectron spectroscopy results indicated that the NiO was formed at the interface between ZnO and Ni where the Ni was oxidized by ZnO during the ALD of the Ni layer. Electrochemical measurement results revealed that the Ti/ZnO NWs/Ni (1500 cycles) electrode with a 30 nm thick Ni-NiO shell layer had the best supercapacitor properties including ultrahigh specific capacitance (∼2440 F g -1 ), good rate capability (80.5%) under high current charge-discharge conditions, and a relatively better cycling stability (86.7% of the initial value remained after 750 cycles at 10 A g -1 ). These attractive capacitive behaviors are mainly attributed to the unique core-shell structure and the combined effect of ZnO NW arrays as short charge transfer pathways for ion diffusion and electron transfer as well as conductive Ni serving as channel for the fast electron transport to Ti substrate. This high-performance Ti/ZnO NWs/Ni hybrid structure is expected to be one of a promising electrodes for high-performance supercapacitor applications.

  4. Synthesis of vertical arrays of ultra long ZnO nanowires on noncrystalline substrates

    Kwon, Bong Jun; Lee, Kyung Moon; Shin, Hae-Young; Kim, Jinwoong; Liu, Jinzhang; Yoon, Seokhyun; Lee, Soonil; Ahn, Y.H.; Park, Ji-Yong

    2012-01-01

    Highlights: ► Arrays of vertical ultra-long ZnO nanowires with lengths upto 300 μm. ► Controls of lengths and diameters of vertical arrays of ZnO nanowires on SiO 2 substrates. ► Luminescent and electrical properties of ZnO nanowires prepared with different growth conditions. - Abstract: Vertically aligned arrays of ultralong ZnO nanowires were synthesized on SiO 2 substrates with carbothermal vapor phase transport method with Au seeding layer. High density of vertically aligned ZnO nanowires with lengths from a few to ∼300 μm could be grown by controlling growth conditions. Supply of high concentration of Zn vapor and control of the ratio between Zn vapor and oxygen are found to have the most significant effects on the growth of long ZnO nanowires in the vapor–solid growth mechanism. The nanowires are of high crystalline quality as confirmed by various structural, compositional, and luminescent measurements. Luminescent and electrical properties of ZnO nanowires with different growth conditions were also investigated.

  5. Investigation on the Tunable-Length Zinc Oxide Nanowire Arrays for Dye-Sensitized Solar Cells

    Shou-Yi Kuo

    2014-01-01

    Full Text Available We had successfully fabricated ZnO-based nanowires by vapor transport method in the furnace tube. ZnO nanowire arrays grown in 600°C for 30 minutes, 60 minutes, 90 minutes, and 120 minutes had applied to the dye-sensitized solar cells. The dye loading is proportional to the total equivalent surface area of ZnO nanowire arrays in the cells and plays an important role in improving power conversion efficiency. The highest efficiency was observed in DSSC sample with ZnO nanowires grown for 90 minutes, which had the largest equivalent surface area and also the highest dye loading. According to our experimental results, the enhancement in power conversion efficiency is attributed to the higher light harvesting and reduction of carrier recombination. In addition, ZnO nanowires also contribute to the photocurrent in the UV region.

  6. The fabrication and the coercivity mechanism of segmented (Ni/Fe)m composite nanowire arrays

    Xue, D S; Shi, H G; Si, M S

    2004-01-01

    Arrays of segmented (Ni/Fe) m (m = 1,2,3,4,5) composite nanowires about 3 μm in length and with aspect ratios of about 60 were electrodeposited on anodic porous alumina templates using a dual bath. The structure, morphology and magnetic properties of the samples were characterized by means of x-ray diffraction, transmission electron microscopy and vibrating sample magnetometry, respectively. It is found that Fe(110) and Ni(111) orientations along nanowire axis are preferred. The large aspect ratio of the composite nanowires reveals a strong shape magnetic anisotropy. As the number of the Ni/Fe composite segments m increases, the coercivity of the nanowire arrays, with the magnetic field applied parallel to the wire, gradually increases. The coercivity variation of the segmented composite nanowires is closely related to the effective exchange coupling between the Ni and Fe segments

  7. Superconductivity of a Sn film controlled by an array of Co nanowires

    Wei, Z.; Ye, Z.; Rathnayaka, K. D. D.; Lyuksyutov, I. F.; Wu, W.; Naugle, D. G.

    2012-09-01

    Superconducting properties of a hybrid structure composed of ferromagnetic Co nanowire arrays and a superconducting Sn film have been investigated. Ordered Co nanowires arrays with 60 nm, 150 nm and 200 nm diameter were electroplated into the pores of self organized Anodic Aluminum Oxide (AAO) membranes. Hysteretic dependence of the Sn film superconducting properties on applied magnetic field and critical current enhancement at moderate fields has been observed. This behavior strongly depends on the ratio of the Sn film thickness to the Co nanowire diameter.

  8. Superconductivity of a Sn film controlled by an array of Co nanowires

    Wei, Z.; Ye, Z.; Rathnayaka, K.D.D.; Lyuksyutov, I.F.; Wu, W.; Naugle, D.G.

    2012-01-01

    Superconducting properties of a hybrid structure composed of ferromagnetic Co nanowire arrays and a superconducting Sn film have been investigated. Ordered Co nanowires arrays with 60 nm, 150 nm and 200 nm diameter were electroplated into the pores of self organized Anodic Aluminum Oxide (AAO) membranes. Hysteretic dependence of the Sn film superconducting properties on applied magnetic field and critical current enhancement at moderate fields has been observed. This behavior strongly depends on the ratio of the Sn film thickness to the Co nanowire diameter.

  9. Magnetic behaviour of arrays of Ni nanowires by electrodeposition into self-aligned titania nanotubes

    Prida, V.M.; Hernandez-Velez, M.; Cervera, M.; Pirota, K.; Sanz, R.; Navas, D.; Asenjo, A.; Aranda, P.; Ruiz-Hitzky, E.; Batallan, F.; Vazquez, M.; Hernando, B.; Menendez, A.; Bordel, N.; Pereiro, R.

    2005-01-01

    Arrays of Ni nanowires electrodeposited into self-aligned and randomly disordered titania nanotube arrays grown by anodization process are investigated by X-ray diffraction, SEM, rf-GDOES and VSM magnetometry. The titania nanotube outer diameter is about 160 nm, wall thickness ranging from 60 to 70 nm and 300 nm in depth. The so-obtained Ni nanowires reach above 100 nm diameter and 240 nm length, giving rise to coercive fields of 98 and 200 Oe in the perpendicular or parallel to the nanowires axis hysteresis loops, respectively. The formation of magnetic vortex domain states is also discussed

  10. Enhancement of thermoelectric figure-of-merit in laterally-coupled nanowire arrays

    Zhang, Yiqun; Shi, Yi; Pu, Lin; Wang, Junzhuan; Pan, Lijia; Zheng, Youdou

    2011-01-01

    A high ZT value is predicted in laterally-coupled nanowire arrays. The quantum confinement and coupling of electrons are considered in the framework of effective-mass envelope-function theory. The boundary scattering on phonons is also taken into account. The thermoelectric properties benefit from the large Seebeck coefficient and dramatically reduced lattice thermal conductivity, as well as the preserved electronic conductivity in the minibands of the coupling nanowires. The enhancement of ZT to more than 10-fold is achieved in the n-type Si nanowires/Ge host material. Results suggest that the laterally-coupled nanowire arrays can be designed for high-performance thermoelectric devices. -- Highlights: → A high ZT value is predicted in the lateral-coupling nanowire arrays. → The lattice thermal conductivity is dramatically reduced in the lateral direction of nanowire arrays. → The electron transport is preserved in the lateral direction due to the coupling effect. → The ZT value is largely enhanced as the nanowire volume fraction exceeds some critical point.

  11. A force sensor using nanowire arrays to understand biofilm formation (Conference Presentation)

    Sahoo, Prasana K.; Cavalli, Alessandro; Pelegati, Vitor B.; Murillo, Duber M.; Souza, Alessandra A.; Cesar, Carlos L.; Bakkers, Erik P. A. M.; Cotta, Monica A.

    2016-03-01

    Understanding the cellular signaling and function at the nano-bio interface can pave the way towards developing next-generation smart diagnostic tools. From this perspective, limited reports detail so far the cellular and subcellular forces exerted by bacterial cells during the interaction with abiotic materials. Nanowire arrays with high aspect ratio have been used to detect such small forces. In this regard, live force measurements were performed ex-vivo during the interaction of Xylella fastidiosa bacterial cells with InP nanowire arrays. The influence of nanowire array topography and surface chemistry on the response and motion of bacterial cells was studied in detail. The nanowire arrays were also functionalized with different cell adhesive promoters, such as amines and XadA1, an afimbrial protein of X.fastidiosa. By employing the well-defined InP nanowire arrays platform, and single cell confocal imaging system, we were able to trace the bacterial growth pattern, and show that their initial attachment locations are strongly influenced by the surface chemistry and nanoscale surface topography. In addition, we measure the cellular forces down to few nanonewton range using these nanowire arrays. In case of nanowire functionalized with XadA1, the force exerted by vertically and horizontally attached single bacteria on the nanowire is in average 14% and 26% higher than for the pristine array, respectively. These results provide an excellent basis for live-cell force measurements as well as unravel the range of forces involved during the early stages of bacterial adhesion and biofilm formation.

  12. High thermoelectric properties of (Sb, Bi)2Te3 nanowire arrays by tilt-structure engineering

    Tan, Ming; Hao, Yanming; Deng, Yuan; Chen, Jingyi

    2018-06-01

    In this paper, we present an innovative tilt-structure design concept for (Sb, Bi)2Te3 nanowire array assembled by high-quality nanowires with well oriented growth, utilizing a simple vacuum thermal evaporation technique. The unusual tilt-structure (Sb, Bi)2Te3 nanowire array with a tilted angle of 45° exhibits a high thermoelectric dimensionless figure-of-merit ZT = 1.72 at room temperature. The relatively high ZT value in contrast to that of previously reported (Sb, Bi)2Te3 materials and the vertical (Sb, Bi)2Te3 nanowire arrays evidently reveals the crucial role of the unique tilt-structure in favorably influencing carrier and phonon transport properties, resulting in a significantly improved ZT value. The transport mechanism of such tilt-structure is proposed and investigated. This method opens a new approach to optimize nano-structure in thin films for next-generation thermoelectric materials and devices.

  13. Quantum dots coupled ZnO nanowire-array panels and their photocatalytic activities.

    Liao, Yulong; Que, Wenxiu; Zhang, Jin; Zhong, Peng; Yuan, Yuan; Qiu, Xinku; Shen, Fengyu

    2013-02-01

    Fabrication and characterization of a heterojunction structured by CdS quantum dots@ZnO nanowire-array panels were presented. Firstly, ZnO nanowire-array panels were prepared by using a chemical bath deposition approach where wurtzite ZnO nanowires with a diameter of about 100 nm and 3 microm in length grew perpendicularly to glass substrate. Secondly, CdS quantum dots were deposited onto the surface of the ZnO nanowire-arrays by using successive ion layer absorption and reaction method, and the CdS shell/ZnO core heterojunction were thus obtained. Field emission scanning electron microscopy and transmission electron microscope were employed to characterize the morphological properties of the as-obtained CdS quantum dots@ZnO nanowire-array panels. X-ray diffraction was adopted to characterize the crystalline properties of the as-obtained CdS quantum dots@ZnO nanowire-array panels. Methyl orange was taken as a model compound to confirm the photocatalytic activities of the CdS shell/ZnO core heterojunction. Results indicate that CdS with narrow band gap not only acts as a visible-light sensitizer but also is responsible for an effective charge separation.

  14. Magnetic behaviour of densely packed hexagonal arrays of Ni nanowires: Influence of geometric characteristics

    Vazquez, M.; Pirota, K.; Torrejon, J.; Navas, D.; Hernandez-Velez, M.

    2005-01-01

    Densely packed arrays of magnetic nanowires with hexagonal symmetry have been prepared by electrodeposition filling of the nanopores in alumina membranes previously formed by self-assembling induced by anodization. The influence of geometrical characteristics of arrays of Ni nanowires on their hysteresis loops have been studied. These characteristics are controlled by suitable choosing of preparation parameters: nanowires diameter ranges between 18 and 80 nm for lattice parameter of hexagonal symmetry of 65 and 105 nm, while length of nanowires is taken between 500 and 2000 nm. Additionally, the temperature dependence of coercivity when applying the field parallel to the nanowires or in-plane of the membrane has been measured. All these results allows us to conclude that magnetic behaviour is determined by the balance between different energy contributions, namely, the shape anisotropy of individual nanowires, the magnetostatic interaction among nanowires (confirmed to play a decisive role), and seemingly the magnetoelastic anisotropy induced in the nanowires by the alumina matrix through temperature changes as a consequence of their different thermal expansion coefficients

  15. An Enhanced UV-Vis-NIR an d Flexible Photodetector Based on Electrospun ZnO Nanowire Array/PbS Quantum Dots Film Heterostructure.

    Zheng, Zhi; Gan, Lin; Zhang, Jianbing; Zhuge, Fuwei; Zhai, Tianyou

    2017-03-01

    ZnO nanostructure-based photodetectors have a wide applications in many aspects, however, the response range of which are mainly restricted in the UV region dictated by its bandgap. Herein, UV-vis-NIR sensitive ZnO photodetectors consisting of ZnO nanowires (NW) array/PbS quantum dots (QDs) heterostructures are fabricated through modified electrospining method and an exchanging process. Besides wider response region compared to pure ZnO NWs based photodetectors, the heterostructures based photodetectors have faster response and recovery speed in UV range. Moreover, such photodetectors demonstrate good flexibility as well, which maintain almost constant performances under extreme (up to 180°) and repeat (up to 200 cycles) bending conditions in UV-vis-NIR range. Finally, this strategy is further verified on other kinds of 1D nanowires and 0D QDs, and similar enhancement on the performance of corresponding photodetecetors can be acquired, evidencing the universality of this strategy.

  16. Misfit-guided self-organization of anticorrelated Ge quantum dot arrays on Si nanowires.

    Kwon, Soonshin; Chen, Zack C Y; Kim, Ji-Hun; Xiang, Jie

    2012-09-12

    Misfit-strain guided growth of periodic quantum dot (QD) arrays in planar thin film epitaxy has been a popular nanostructure fabrication method. Engineering misfit-guided QD growth on a nanoscale substrate such as the small curvature surface of a nanowire represents a new approach to self-organized nanostructure preparation. Perhaps more profoundly, the periodic stress underlying each QD and the resulting modulation of electro-optical properties inside the nanowire backbone promise to provide a new platform for novel mechano-electronic, thermoelectronic, and optoelectronic devices. Herein, we report a first experimental demonstration of self-organized and self-limited growth of coherent, periodic Ge QDs on a one-dimensional Si nanowire substrate. Systematic characterizations reveal several distinctively different modes of Ge QD ordering on the Si nanowire substrate depending on the core diameter. In particular, Ge QD arrays on Si nanowires of around 20 nm diameter predominantly exhibit an anticorrelated pattern whose wavelength agrees with theoretical predictions. The correlated pattern can be attributed to propagation and correlation of misfit strain across the diameter of the thin nanowire substrate. The QD array growth is self-limited as the wavelength of the QDs remains unchanged even after prolonged Ge deposition. Furthermore, we demonstrate a direct kinetic transformation from a uniform Ge shell layer to discrete QD arrays by a postgrowth annealing process.

  17. Static and dynamic magnetic properties of densely packed magnetic nanowire arrays

    Dmytriiev, O.; Al-Jarah, U.A.S.; Gangmei, P.

    2013-01-01

    and a continuous ferromagnetic thin film. In particular, the competition between anisotropies associated with the shape of the individual nanowires and that of the array as a whole has been studied. Measured and simulated hysteresis loops are largely anhysteretic with zero remanence, and the micromagnetic...... configuration is such that the net magnetization vanishes in directions orthogonal to the applied field. Simulations of the remanent state reveal antiferromagnetic alignment of the magnetization in adjacent nanowires and the formation of vortex flux closure structures at the ends of each nanowire....... The excitation spectra obtained from experiment and micromagnetic simulations are in qualitative agreement for magnetic fields applied both parallel and perpendicular to the axes of the nanowires. For the field parallel to the nanowire axes, there is also good quantitative agreement between experiment...

  18. Fabrication and magnetic characterization of Co{sub x}Pt{sub 1-x} nanowire arrays

    Shamaila, S. [Chinese Academy of Sciences, State Key Laboratory of Magnetism, Institute of Physics, Beijing (China); University of Engineering and Technology, Advanced Physics Laboratory, Lahore (Pakistan); Sharif, R.; Riaz, S.; Han, X.F. [Chinese Academy of Sciences, State Key Laboratory of Magnetism, Institute of Physics, Beijing (China); Khaleeq-ur-Rahman, M. [University of Engineering and Technology, Advanced Physics Laboratory, Lahore (Pakistan)

    2008-08-15

    Co{sub x}Pt{sub 1-x}(x{>=}0.7) alloy nanowires are grown into self-synthesized anodic alumina templates by electrodeposition. Magnetic and magnetization properties of Co{sub x}Pt{sub 1-x} alloy nanowires are measured as functions of wire length, temperature, and field orientation. X-ray diffraction shows that as-prepared CoPt nanowires are of fcc polycrystalline structure. A crossover of easy axis of magnetization is observed from parallel to perpendicular of the nanowire axis as a function of length. The coercivity (H{sub c}) and remanent squareness (SQ) of Co{sub x}Pt{sub 1-x} nanowire arrays are derived from hysteresis loops measured at various angles ({theta}) between the field and wire axis. H{sub c}({theta}) and SQ({theta}) curves show bell-shaped or otherwise bell-shaped behavior corresponding to the easy axis of their magnetization. (orig.)

  19. Preparation and properties of novel magnetic composite nanostructures: Arrays of nanowires in porous membranes

    Vazquez, M.; Hernandez-Velez, M.; Asenjo, A.; Navas, D.; Pirota, K.; Prida, V.; Sanchez, O.; Baldonedo, J.L.

    2006-01-01

    In the present work, we introduce our latest achievements in the development of novel highly ordered composite magnetic nanostructures employing anodized nanoporous membranes as precursor templates where long-range hexagonal symmetry is induced by self-assembling during anodization process. Subsequent processing as electroplating, sputtering or pressing are employed to prepare arrays of metallic, semiconductor or polymeric nanowires embedded in oxide or metallic membranes. Particular attention is paid to recent results on controlling the magnetic anisotropy in arrays of metallic nanowires, particularly Co, and nanohole arrays in Ni membranes

  20. Large-area fabrication of patterned ZnO-nanowire arrays using light stamping lithography.

    Hwang, Jae K; Cho, Sangho; Seo, Eun K; Myoung, Jae M; Sung, Myung M

    2009-12-01

    We demonstrate selective adsorption and alignment of ZnO nanowires on patterned poly(dimethylsiloxane) (PDMS) thin layers with (aminopropyl)siloxane self-assembled monolayers (SAMs). Light stamping lithography (LSL) was used to prepare patterned PDMS thin layers as neutral passivation regions on Si substrates. (3-Aminopropyl)triethoxysilane-based SAMs were selectively formed only on regions exposing the silanol groups of the Si substrates. The patterned positively charged amino groups define and direct the selective adsorption of ZnO nanowires with negative surface charges in the protic solvent. This procedure can be adopted in automated printing machines that generate patterned ZnO-nanowire arrays on large-area substrates. To demonstrate its usefulness, the LSL method was applied to prepare ZnO-nanowire transistor arrays on 4-in. Si wafers.

  1. Fabrication of vertically aligned Pd nanowire array in AAO template by electrodeposition using neutral electrolyte

    Yüzer Hayrettin

    2010-01-01

    Full Text Available Abstract A vertically aligned Pd nanowire array was successfully fabricated on an Au/Ti substrate using an anodic aluminum oxide (AAO template by a direct voltage electrodeposition method at room temperature using diluted neutral electrolyte. The fabrication of Pd nanowires was controlled by analyzing the current–time transient during electrodeposition using potentiostat. The AAO template and the Pd nanowires were characterized by scanning electron microscopy (SEM, energy-dispersive X-ray (EDX methods and X-Ray diffraction (XRD. It was observed that the Pd nanowire array was standing freely on an Au-coated Ti substrate after removing the AAO template in a relatively large area of about 5 cm2, approximately 50 nm in diameter and 2.5 μm in length with a high aspect ratio. The nucleation rate and the number of atoms in the critical nucleus were determined from the analysis of current transients. Pd nuclei density was calculated as 3.55 × 108 cm−2. Usage of diluted neutral electrolyte enables slower growing of Pd nanowires owing to increase in the electrodeposition potential and thus obtained Pd nanowires have higher crystallinity with lower dislocations. In fact, this high crystallinity of Pd nanowires provides them positive effect for sensor performances especially.

  2. Tunable absorption resonances in the ultraviolet for InP nanowire arrays.

    Aghaeipour, Mahtab; Anttu, Nicklas; Nylund, Gustav; Samuelson, Lars; Lehmann, Sebastian; Pistol, Mats-Erik

    2014-11-17

    The ability to tune the photon absorptance spectrum is an attracting way of tailoring the response of devices like photodetectors and solar cells. Here, we measure the reflectance spectra of InP substrates patterned with arrays of vertically standing InP nanowires. Using the reflectance spectra, we calculate and analyze the corresponding absorptance spectra of the nanowires. We show that we can tune absorption resonances for the nanowire arrays into the ultraviolet by decreasing the diameter of the nanowires. When we compare our measurements with electromagnetic modeling, we generally find good agreement. Interestingly, the remaining differences between modeled and measured spectra are attributed to a crystal-phase dependence in the refractive index of InP. Specifically, we find indication of significant differences in the refractive index between the modeled zinc-blende InP nanowires and the measured wurtzite InP nanowires in the ultraviolet. We believe that such crystal-phase dependent differences in the refractive index affect the possibility to excite optical resonances in the large wavelength range of 345 InP nanowire-based solar cells and photodetectors.

  3. Electronic transport mechanisms in scaled gate-all-around silicon nanowire transistor arrays

    Clément, N., E-mail: nicolas.clement@iemn.univ-lille1.fr, E-mail: guilhem.larrieu@laas.fr; Han, X. L. [Institute of Electronics, Microelectronics and Nanotechnology, CNRS, Avenue Poincaré, 59652 Villeneuve d' Ascq (France); Larrieu, G., E-mail: nicolas.clement@iemn.univ-lille1.fr, E-mail: guilhem.larrieu@laas.fr [Laboratory for Analysis and Architecture of Systems (LAAS), CNRS, Universite de Toulouse, 7 Avenue Colonel Roche, 31077 Toulouse (France)

    2013-12-23

    Low-frequency noise is used to study the electronic transport in arrays of 14 nm gate length vertical silicon nanowire devices. We demonstrate that, even at such scaling, the electrostatic control of the gate-all-around is sufficient in the sub-threshold voltage region to confine charges in the heart of the wire, and the extremely low noise level is comparable to that of high quality epitaxial layers. Although contact noise can already be a source of poor transistor operation above threshold voltage for few nanowires, nanowire parallelization drastically reduces its impact.

  4. Defect-engineered GaN:Mg nanowire arrays for overall water splitting under violet light

    Kibria, M. G.; Chowdhury, F. A.; Zhao, S.; Mi, Z.; Trudeau, M. L.; Guo, H.

    2015-01-01

    We report that by engineering the intra-gap defect related energy states in GaN nanowire arrays using Mg dopants, efficient and stable overall neutral water splitting can be achieved under violet light. Overall neutral water splitting on Rh/Cr 2 O 3 co-catalyst decorated Mg doped GaN nanowires is demonstrated with intra-gap excitation up to 450 nm. Through optimized Mg doping, the absorbed photon conversion efficiency of GaN nanowires reaches ∼43% at 375–450 nm, providing a viable approach to extend the solar absorption of oxide and non-oxide photocatalysts

  5. A general melt-injection-decomposition route to oriented metal oxide nanowire arrays

    Han, Dongqiang; Zhang, Xinwei; Hua, Zhenghe; Yang, Shaoguang

    2016-12-01

    In this manuscript, a general melt-injection-decomposition (MID) route has been proposed and realized for the fabrication of oriented metal oxide nanowire arrays. Nitrate was used as the starting materials, which was injected into the nanopores of the anodic aluminum oxide (AAO) membrane through the capillarity action in its liquid state. At higher temperature, the nitrate decomposed into corresponding metal oxide within the nanopores of the AAO membrane. Oriented metal oxide nanowire arrays were formed within the AAO membrane as a result of the confinement of the nanopores. Four kinds of metal oxide (CuO, Mn2O3, Co3O4 and Cr2O3) nanowire arrays are presented here as examples fabricated by this newly developed process. X-ray diffraction, scanning electron microscopy and transmission electron microscopy studies showed clear evidence of the formations of the oriented metal oxide nanowire arrays. Formation mechanism of the metal oxide nanowire arrays is discussed based on the Thermogravimetry and Differential Thermal Analysis measurement results.

  6. Ordered ZnO/AZO/PAM nanowire arrays prepared by seed-layer-assisted electrochemical deposition

    Shen, Yu-Min; Pan, Chih-Huang; Wang, Sheng-Chang; Huang, Jow-Lay

    2011-01-01

    An Al-doped ZnO (AZO) seed layer is prepared on the back side of a porous alumina membrane (PAM) substrate by spin coating followed by annealing in a vacuum at 400 °C. Zinc oxide in ordered arrays mediated by a high aspect ratio and an ordered pore array of AZO/PAM is synthesized. The ZnO nanowire array is prepared via a 3-electrode electrochemical deposition process using ZnSO 4 and H 2 O 2 solutions at a potential of − 1 V (versus saturated calomel electrode) and temperatures of 65 and 80 °C. The microstructure and chemical composition of the AZO seed layer and ZnO/AZO/PAM nanowire arrays are characterized by field emission scanning electron microscopy (FE-SEM), high-resolution transmission electron microscopy (HR-TEM), and energy-dispersive X-ray spectroscopy (EDS). Results indicate that the ZnO/AZO/PAM nanowire arrays were assembled in the nanochannel of the porous alumina template with diameters of 110–140 nm. The crystallinity of the ZnO nanowires depends on the AZO seed layer during the annealing process. The nucleation and growth process of ZnO/AZO/PAM nanowires are interpreted by the seed-layer-assisted growth mechanism.

  7. High Density Silver Nanowire Arrays using Self-ordered Anodic Aluminum Oxide (AAO) Membrane

    Han, Young-Hwan

    2008-01-01

    High density silver nanowire arrays were synthesized through the self-ordered Anodic Aluminum Oxide (AAO) template. The pore size in the AAO membrane was confirmed by processing the widening porosity with a honeycomb structure with cross sections of 20nm, 50nm, and 100nm, by SEM. Pore numbers by unit area were consistent; only pore size changed. The synthesized silver nanowire, which was crystallized, was dense in the cross sections of the amorphous AAO membrane. The synthesized silver nanowi...

  8. Construction of 3D Metallic Nanowire Arrays on Arbitrarily-Shaped Substrate.

    Chen, Fei; Li, Jingning; Yu, Fangfang; Peng, Ru-Wen; Wang, Mu; Mu Wang Team

    Formation of three-dimensional (3D) nanostructures is an important step of advanced manufacture for new concept devices with novel functionality. Despite of great achievements in fabricating nanostructures with state of the art lithography approaches, these nanostructures are normally limited on flat substrates. Up to now it remains challenging to build metallic nanostructures directly on a rough and bumpy surface. Here we demonstrate a unique approach to fabricate metallic nanowire arrays on an arbitrarily-shaped surface by electrodeposition, which is unknown before 2016. Counterintuitively here the growth direction of the nanowires is perpendicular to their longitudinal axis, and the specific geometry of nanowires can be achieved by introducing specially designed shaped substrate. The spatial separation and the width of the nanowires can be tuned by voltage, electrolyte concentration and temperature in electrodeposition. By taking cobalt nanowire array as an example, we demonstrate that head-to-head and tail-to-tail magnetic domain walls can be easily introduced and modulated in the nanowire arrays, which is enlightening to construct new devices such as domain wall racetrack memory. We acknowledge the foundation from MOST and NSF(China).

  9. Piezo-Phototronic Enhanced UV Sensing Based on a Nanowire Photodetector Array.

    Han, Xun; Du, Weiming; Yu, Ruomeng; Pan, Caofeng; Wang, Zhong Lin

    2015-12-22

    A large array of Schottky UV photodetectors (PDs) based on vertical aligned ZnO nanowires is achieved. By introducing the piezo-phototronic effect, the performance of the PD array is enhanced up to seven times in photoreponsivity, six times in sensitivity, and 2.8 times in detection limit. The UV PD array may have applications in optoelectronic systems, adaptive optical computing, and communication. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Amperometric Morphine Detection Using Pt-Co Alloy Nanowire Array-modified Electrode

    Tao, Manlan; Xu, Feng; Li, Yueting; Xu, Quanqing; Chang, Yanbing; Yang, Yunhui; Wu, Zaisheng

    2010-01-01

    Pt-Co alloy nanowire array was directly synthesized by electrochemical deposition with polycarbonate template at -1.0V and subsequent chemical etching of the template. The use of Pt-Co alloy nanowire array-modified electrode (Pt- Co NAE) for the determination of morphine (MO) is described. The morphology of the Pt-Co alloy nanowire array has been investigated by scanning electron microscopy (SEM) and energy disperse X-ray spectroscopy (EDS) analysis), respectively. The resulting Pt-Co NAE offered a linear amperometric response for morphine ranging from 2.35 x 10 -5 to 2.39 x 10 -3 M with a detection limit of 7.83 x 10 -6 M at optimum conditions. This sensor displayed high sensitivity and long-term stability

  11. Quantitative measurements of C-reactive protein using silicon nanowire arrays

    Min-Ho Lee

    2008-03-01

    Full Text Available Min-Ho Lee, Kuk-Nyung Lee, Suk-Won Jung, Won-Hyo Kim, Kyu-Sik Shin, Woo-Kyeong SeongKorea Electronics Technology Institute, Gyeonggi, KoreaAbstract: A silicon nanowire-based sensor for biological application showed highly desirable electrical responses to either pH changes or receptor-ligand interactions such as protein disease markers, viruses, and DNA hybridization. Furthermore, because the silicon nanowire can display results in real-time, it may possess superior characteristics for biosensing than those demonstrated in previously studied methods. However, despite its promising potential and advantages, certain process-related limitations of the device, due to its size and material characteristics, need to be addressed. In this article, we suggest possible solutions. We fabricated silicon nanowire using a top-down and low cost micromachining method, and evaluate the sensing of molecules after transfer and surface modifications. Our newly designed method can be used to attach highly ordered nanowires to various substrates, to form a nanowire array device, which needs to follow a series of repetitive steps in conventional fabrication technology based on a vapor-liquid-solid (VLS method. For evaluation, we demonstrated that our newly fabricated silicon nanowire arrays could detect pH changes as well as streptavidin-biotin binding events. As well as the initial proof-of-principle studies, C-reactive protein binding was measured: electrical signals were changed in a linear fashion with the concentration (1 fM to 1 nM in PBS containing 1.37 mM of salts. Finally, to address the effects of Debye length, silicon nanowires coupled with antigen proteins underwent electrical signal changes as the salt concentration changed.Keywords: silicon nanowire array, C-reactive protein, vapor-liquid-solid method

  12. Improving emission uniformity and linearizing band dispersion in nanowire arrays using quasi-aperiodicity

    Anderson, P. Duke [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Univ. of Southern California, Los Angeles, CA (United States). Ming Hsieh Dept. of Electrical Engineering; Koleske, Daniel D. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Povinelli, Michelle L. [Univ. of Southern California, Los Angeles, CA (United States). Ming Hsieh Dept. of Electrical Engineering; Subramania, Ganapathi [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

    2017-10-01

    For this study, we experimentally investigate a new class of quasi-aperiodic structures for improving the emission pattern in nanowire arrays. Efficient normal emission, as well as lasing, can be obtained from III-nitride photonic crystal (PhC) nanowire arrays that utilize slow group velocity modes near the Γ-point in reciprocal space. However, due to symmetry considerations, the emitted far-field pattern of such modes are often ‘donut’-like. Many applications, including lighting for displays or lasers, require a more uniform beam profile in the far-field. Previous work has improved far-field beam uniformity of uncoupled modes by changing the shape of the emitting structure. However, in nanowire systems, the shape of nanowires cannot always be arbitrarily changed due to growth or etch considerations. Here, we investigate breaking symmetry by instead changing the position of emitters. Using a quasi-aperiodic geometry, which changes the emitter position within a photonic crystal supercell (2x2), we are able to linearize the photonic bandstructure near the Γ-point and greatly improve emitted far-field uniformity. We realize the III-nitride nanowires structures using a top-down fabrication procedure that produces nanowires with smooth, vertical sidewalls. Comparison of room-temperature micro-photoluminescence (µ-PL) measurements between periodic and quasi-aperiodic nanowire arrays reveal resonances in each structure, with the simple periodic structure producing a donut beam in the emitted far-field and the quasi-aperiodic structure producing a uniform Gaussian-like beam. We investigate the input pump power vs. output intensity in both systems and observe the simple periodic array exhibiting a non-linear relationship, indicative of lasing. We believe that the quasi-aperiodic approach studied here provides an alternate and promising strategy for shaping the emission pattern of nanoemitter systems.

  13. Observation of intact desorption ionization of peptide molecules from arrays of tungsten oxide nanowires by laser irradiation

    Han, Sang Yun [Dept. of Nanochemistry, Gachon University, Seongnam (Korea, Republic of)

    2015-08-15

    Length-controlled WO{sub 3} surface nanowires with a 50 nm diameter were prepared by utilizing anodic Al{sub 2}O{sub 3} templates. Careful control of the fabrication process yielded a set of length-controlled nanowire arrays (Figure 1). The lengths of the nanowires covered a range of 60–250 nm. Typically, a 0.5-μL drop of a sample solution in 10% MeOH that contained 2 pmol of sample was pipetted directly onto the nanowire chips, which were dried under ambient conditions. We report the observation of intact LDI of thermally labile peptides from WO{sub 3} nanowire arrays, which have never been reported for any other metal oxide nanowire arrays. As metal oxides are thermally stable and useful in many applications, and fabrication of various nanostructures are well established, we suggest that the nanostructured surfaces of metal oxides are promising for LDI and thus worthy of further investigations.

  14. A universal approach to electrically connecting nanowire arrays using nanoparticles—application to a novel gas sensor architecture

    Parthangal, Prahalad M.; Cavicchi, Richard E.; Zachariah, Michael R.

    2006-08-01

    We report on a novel, in situ approach toward connecting and electrically contacting vertically aligned nanowire arrays using conductive nanoparticles. The utility of the approach is demonstrated by development of a gas sensing device employing this nano-architecture. Well-aligned, single-crystalline zinc oxide nanowires were grown through a direct thermal evaporation process at 550 °C on gold catalyst layers. Electrical contact to the top of the nanowire array was established by creating a contiguous nanoparticle film through electrostatic attachment of conductive gold nanoparticles exclusively onto the tips of nanowires. A gas sensing device was constructed using such an arrangement and the nanowire assembly was found to be sensitive to both reducing (methanol) and oxidizing (nitrous oxides) gases. This assembly approach is amenable to any nanowire array for which a top contact electrode is needed.

  15. A universal approach to electrically connecting nanowire arrays using nanoparticles-application to a novel gas sensor architecture

    Parthangal, Prahalad M; Cavicchi, Richard E; Zachariah, Michael R

    2006-01-01

    We report on a novel, in situ approach toward connecting and electrically contacting vertically aligned nanowire arrays using conductive nanoparticles. The utility of the approach is demonstrated by development of a gas sensing device employing this nano-architecture. Well-aligned, single-crystalline zinc oxide nanowires were grown through a direct thermal evaporation process at 550 deg. C on gold catalyst layers. Electrical contact to the top of the nanowire array was established by creating a contiguous nanoparticle film through electrostatic attachment of conductive gold nanoparticles exclusively onto the tips of nanowires. A gas sensing device was constructed using such an arrangement and the nanowire assembly was found to be sensitive to both reducing (methanol) and oxidizing (nitrous oxides) gases. This assembly approach is amenable to any nanowire array for which a top contact electrode is needed

  16. GISAXS and SAXS studies on the spatial structures of Co nanowire arrays

    Cheng Weidong; Xing Xueqing; Wang Dehong; Gong Yu; Mo Guang; Cai Quan; Chen Zhongjun; Wu Zhonghua

    2011-01-01

    The spatial structures of magnetic Co nanowire array embedded in anodic aluminium membranes were investigated by grazing incidence small angle X-ray scattering (GISAXS) and conventional small angle X-ray scattering (SAXS) techniques. Compared with SEM observation, the GISAXS and SAXS measurements can get more overall structural information in a large-area scale. In this study, the two-dimensional GISAXS pattern was well reconstructed by using the IsGISAXS program. The results demonstrate that the hexagonal lattice formed by the Co nanowires is distorted (a≈105 nm, b≈95 nm). These Co nanowires are isolated into many structure domains with different orientations with a size of about 2 μm. The SAXS results have also confirmed that the nanopore structures in the AAM can be retained after depositing Co nanowires although the Co nanowires can not completely but only just fill up the nanopores. These results are helpful for understanding the global structure of the Co nanowire array. (authors)

  17. Wurtzite InP nanowire arrays grown by selective area MOCVD

    Chu, Hyung-Joon; Stewart, Lawrence; Yeh, Ting-Wei; Dapkus, P.D.

    2010-01-01

    InP nanowires are a unique material phase because this normally zincblende material forms in the wurtzite crystal structure below a critical diameter owing to the contribution of sidewalls to the total formation energy. This may allow control of the carrier transport and optical properties of InP nanowires for applications such as nano scale transistors, lasers and detectors. In this work, we describe the fabrication of InP nanowire arrays by selective area growth using MOCVD in the diameter range where the wurtzite structure is formed. The spatial growth rate in selective area growth is modeled by a diffusion model for the precursors. The proposed model achieves an average error of 9%. Electron microscopy shows that the grown InP nanowires are in the wurtzite crystal phase with many stacking faults. The threshold diameter of the crystal phase transition of InP nanowires is larger than the thermodynamic estimation. In order to explain this tendency, we propose a surface kinetics model based on a 2 x 2 reconstruction. This model can explain the increased tendency for wurtzite nanowire formation on InP (111)A substrates and the preferred growth direction of binary III-V compound semiconductor nanowires. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Prevalence of information stored in arrays of magnetic nanowires against external fields

    Ceballos, D.; Cisternas, E.; Vogel, E. E.; Allende, S.

    2018-04-01

    Arrays of magnetic nanowires in porous alumina can be used to store information inscribed on the system by orienting the magnetization of selected wires pointing in a desired direction, so symbols can be read as ferromagnetic sectors. However, this information is subject to aging and the stored information could be gradually lost. We investigate here two mechanisms proposed to improve the prevalence of the stored information: opposite ferromagnetic band at the center of the symbol and bi-segmented nanowires acting as two layers of nanowires storing the same information. Both mechanisms prove to increase resistance to the action of external magnetic fields for the case of Ni wires in a geometry compatible with actually grown nanowires. Advantages and disadvantages of these mechanisms are discussed.

  19. Effects of Nanowire Length and Surface Roughness on the Electrochemical Sensor Properties of Nafion-Free, Vertically Aligned Pt Nanowire Array Electrodes

    Zhiyang Li

    2015-09-01

    Full Text Available In this paper, vertically aligned Pt nanowire arrays (PtNWA with different lengths and surface roughnesses were fabricated and their electrochemical performance toward hydrogen peroxide (H2O2 detection was studied. The nanowire arrays were synthesized by electroplating Pt in nanopores of anodic aluminum oxide (AAO template. Different parameters, such as current density and deposition time, were precisely controlled to synthesize nanowires with different surface roughnesses and various lengths from 3 μm to 12 μm. The PtNWA electrodes showed better performance than the conventional electrodes modified by Pt nanowires randomly dispersed on the electrode surface. The results indicate that both the length and surface roughness can affect the sensing performance of vertically aligned Pt nanowire array electrodes. Generally, longer nanowires with rougher surfaces showed better electrochemical sensing performance. The 12 μm rough surface PtNWA presented the largest sensitivity (654 μA·mM−1·cm−2 among all the nanowires studied, and showed a limit of detection of 2.4 μM. The 12 μm rough surface PtNWA electrode also showed good anti-interference property from chemicals that are typically present in the biological samples such as ascorbic, uric acid, citric acid, and glucose. The sensing performance in real samples (river water was tested and good recovery was observed. These Nafion-free, vertically aligned Pt nanowires with surface roughness control show great promise as versatile electrochemical sensors and biosensors.

  20. Observation of layered antiferromagnetism in self-assembled parallel NiSi nanowire arrays on Si(110) by spin-polarized scanning tunneling spectromicroscopy

    Hong, Ie-Hong; Hsu, Hsin-Zan

    2018-03-01

    The layered antiferromagnetism of parallel nanowire (NW) arrays self-assembled on Si(110) have been observed at room temperature by direct imaging of both the topographies and magnetic domains using spin-polarized scanning tunneling microscopy/spectroscopy (SP-STM/STS). The topographic STM images reveal that the self-assembled unidirectional and parallel NiSi NWs grow into the Si(110) substrate along the [\\bar{1}10] direction (i.e. the endotaxial growth) and exhibit multiple-layer growth. The spatially-resolved SP-STS maps show that these parallel NiSi NWs of different heights produce two opposite magnetic domains, depending on the heights of either even or odd layers in the layer stack of the NiSi NWs. This layer-wise antiferromagnetic structure can be attributed to an antiferromagnetic interlayer exchange coupling between the adjacent layers in the multiple-layer NiSi NW with a B2 (CsCl-type) crystal structure. Such an endotaxial heterostructure of parallel magnetic NiSi NW arrays with a layered antiferromagnetic ordering in Si(110) provides a new and important perspective for the development of novel Si-based spintronic nanodevices.

  1. Writing and functionalisation of suspended DNA nanowires on superhydrophobic pillar arrays

    Miele, Ermanno; Accardo, Angelo; Falqui, Andrea; Marini, Monica; Giugni, Andrea; Leoncini, Marco; De Angelis, Francesco De; Krahne, Roman; Di Fabrizio, Enzo M.

    2014-01-01

    Nanowire arrays and networks with precisely controlled patterns are very interesting for innovative device concepts in mesoscopic physics. In particular, DNA templates have proven to be versatile for the fabrication of complex structures that obtained functionality via combinations with other materials, for example by functionalisation with molecules or nanoparticles, or by coating with metals. Here, the controlled motion of the a three-phase contact line (TCL) of DNA-loaded drops on superhydrophobic substrates is used to fabricate suspended nanowire arrays. In particular, the deposition of DNA wires is imaged in situ, and different patterns are obtained on hexagonal pillar arrays by controlling the TCL velocity and direction. Robust conductive wires and networks are achieved by coating the wires with a thin layer of gold, and as proof of concept conductivity measurements are performed on single suspended wires. The plastic material of the superhydrophobic pillars ensures electrical isolation from the substrate. The more general versatility of these suspended nanowire networks as functional templates is outlined by fabricating hybrid organic-metal-semiconductor nanowires by growing ZnO nanocrystals onto the metal-coated nanowires.

  2. Writing and functionalisation of suspended DNA nanowires on superhydrophobic pillar arrays

    Miele, Ermanno

    2014-08-08

    Nanowire arrays and networks with precisely controlled patterns are very interesting for innovative device concepts in mesoscopic physics. In particular, DNA templates have proven to be versatile for the fabrication of complex structures that obtained functionality via combinations with other materials, for example by functionalisation with molecules or nanoparticles, or by coating with metals. Here, the controlled motion of the a three-phase contact line (TCL) of DNA-loaded drops on superhydrophobic substrates is used to fabricate suspended nanowire arrays. In particular, the deposition of DNA wires is imaged in situ, and different patterns are obtained on hexagonal pillar arrays by controlling the TCL velocity and direction. Robust conductive wires and networks are achieved by coating the wires with a thin layer of gold, and as proof of concept conductivity measurements are performed on single suspended wires. The plastic material of the superhydrophobic pillars ensures electrical isolation from the substrate. The more general versatility of these suspended nanowire networks as functional templates is outlined by fabricating hybrid organic-metal-semiconductor nanowires by growing ZnO nanocrystals onto the metal-coated nanowires.

  3. Fabrication of free-standing copper foils covered with highly-ordered copper nanowire arrays

    Zaraska, Leszek; Sulka, Grzegorz D.; Jaskuła, Marian

    2012-07-01

    The through-hole nanoporous anodic aluminum oxide (AAO) membranes with relatively large surface area (ca. 2 cm2) were employed for fabrication of free-standing and mechanically stable copper foils covered with close-packed and highly-ordered copper nanowire arrays. The home-made AAO membranes with different pore diameters and interpore distances were fabricated via a two-step self-organized anodization of aluminum performed in sulfuric acid, oxalic acid and phosphoric acid followed by the pore opening/widening procedure. The direct current (DC) electrodeposition of copper was performed efficiently on both sides of AAO templates. The bottom side of the AAO templates was not insulated and consequently Cu nanowire arrays on thick Cu layers were obtained. The proposed template-assisted fabrication of free-standing copper nanowire array electrodes is a promising method for synthesis of nanostructured current collectors. The composition of Cu nanowires was confirmed by energy dispersive X-Ray spectroscopy (EDS) and X-ray diffraction (XRD) analyses. The structural features of nanowires were evaluated from field emission scanning electron microscopy (FE-SEM) images and compared with the characteristic parameters of anodic alumina membranes.

  4. Fabrication of free-standing copper foils covered with highly-ordered copper nanowire arrays

    Zaraska, Leszek; Sulka, Grzegorz D.; Jaskuła, Marian

    2012-01-01

    The through-hole nanoporous anodic aluminum oxide (AAO) membranes with relatively large surface area (ca. 2 cm 2 ) were employed for fabrication of free-standing and mechanically stable copper foils covered with close-packed and highly-ordered copper nanowire arrays. The home-made AAO membranes with different pore diameters and interpore distances were fabricated via a two-step self-organized anodization of aluminum performed in sulfuric acid, oxalic acid and phosphoric acid followed by the pore opening/widening procedure. The direct current (DC) electrodeposition of copper was performed efficiently on both sides of AAO templates. The bottom side of the AAO templates was not insulated and consequently Cu nanowire arrays on thick Cu layers were obtained. The proposed template-assisted fabrication of free-standing copper nanowire array electrodes is a promising method for synthesis of nanostructured current collectors. The composition of Cu nanowires was confirmed by energy dispersive X-Ray spectroscopy (EDS) and X-ray diffraction (XRD) analyses. The structural features of nanowires were evaluated from field emission scanning electron microscopy (FE-SEM) images and compared with the characteristic parameters of anodic alumina membranes.

  5. Time-dependent optical response of three-dimensional Au nanoparticle arrays formed on silica nanowires

    Di Mario, Lorenzo; Otomalo, Tadele Orbula; Catone, Daniele; O'Keeffe, Patrick; Tian, Lin; Turchini, Stefano; Palpant, Bruno; Martelli, Faustino

    2018-03-01

    We present stationary and transient absorption measurements on 3D Au nanoparticle (NP)-decorated Si O2 nanowire arrays. The 3D NP array has been produced by the dewetting of a thin Au film deposited on silica nanowires produced by oxidation of silicon nanowires. The experimental behaviors of the spectral and temporal dynamics observed in the experiment are accurately described by a two-step, three-temperature model. Using an arbitrary set of Au NPs with different aspect ratios, we demonstrate that the width of the experimental spectra, the energy shift of their position with time, and the asymmetry between the two positive wings in the dynamical variation of absorption can all be attributed to the nonuniform shape distribution of the Au NPs in the sample.

  6. Co/Au multisegmented nanowires: a 3D array of magnetostatically coupled nanopillars

    Bran, C.; Ivanov, Yurii P.; Kosel, Jü rgen; Chubykalo-Fesenko, O.; Vazquez, M.

    2017-01-01

    Arrays of multisegmented Co/Au nanowires with designed segment lengths and diameters have been prepared by electrodeposition into aluminum oxide templates. The high quality of the Co/Au interface and the crystallographic structure of Co segments have determined by high-resolution transmission electron microscopy. Magnetic hysteresis loop measurements show larger coercivity and squareness of multisegmented nanowires as compared to single segment Co nanowires. The complementary micromagnetic simulations are in good agreement with the experimental results, confirming that the magnetic behavior is defined mainly by magnetostatic coupling between different segments. The proposed structure constitutes an innovative route towards a 3D array of synchronized magnetic nano-oscillators with large potential in nanoelectronics.

  7. Magnetoelectrolysis of Co nanowire arrays grown in a track-etched polycarbonate membrane

    Sanchez-Barriga, J. [Instituto de Magnetismo Aplicado (UCM-RENFE-CSIC), P.O. Box 155, 28230, Las Rozas, Madrid (Spain)]. E-mail: sbarriga@bessy.de; Lucas, M. [Technische Universitaet Berlin, Institut fuer Theoretische Physik, Hardenbergstr. 36, D-10623 Berlin (Germany); Rivero, G. [Instituto de Magnetismo Aplicado (UCM-RENFE-CSIC), P.O. Box 155, 28230, Las Rozas, Madrid (Spain); Marin, P. [Instituto de Magnetismo Aplicado (UCM-RENFE-CSIC), P.O. Box 155, 28230, Las Rozas, Madrid (Spain); Hernando, A. [Instituto de Magnetismo Aplicado (UCM-RENFE-CSIC), P.O. Box 155, 28230, Las Rozas, Madrid (Spain)

    2007-05-15

    Arrays of Cobalt nanowires with a controlled length of 6{mu}m have been fabricated by electrochemical deposition into the pores of track-etched polycarbonate membranes with a nominal pore diameter of 30nm. The magnetic properties of Co-deposited nanowires and the effects of a magnetic field applied during electrodeposition of the arrays have been studied. An enhancement of the mass deposition rate due to the presence of a 50Oe magnetic field along the nanowire axis has been observed by measuring the experimental development of the current in the electrochemical cell during the fabrication process. X-ray diffraction measurements reveal a different polycrystalline degree for each deposition configuration, indicating that the crystalline structure of the deposited material has been substantially modified. Magnetic measurements show a clear dependence of the anisotropy directions on the orientation of the magnetic field applied during the electrodeposition.

  8. Magnetoelectrolysis of Co nanowire arrays grown in a tracketched polycarbonate membrane

    Radu, Florin [BESSY GmbH, Berlin (Germany); Rivero, Guillermo; Marin, Pilar; Hernando, Antonio [Instituto de Magnetismo Aplicado, Madrid (Spain); Sanchez-Barriga, J. [Instituto de Magnetismo Aplicado, Madrid (Spain); BESSY GmbH, Berlin (Germany); Lucas, M. [Inst. fuer Theoretische Physik, Technische Univ. Berlin (Germany)

    2007-07-01

    Arrays of Cobalt nanowires with a controlled length of 6{mu}m have been fabricated by electrochemical deposition into the pores of track-etched polycarbonate membranes with a nominal pore diameter of 30 nm. The magnetic properties of Co-deposited nanowires and the effects of a magnetic field applied during electrodeposition of the arrays have been studied. An enhancement of the mass deposition rate due to the presence of a 50 Oe magnetic field along the nanowire axis has been observed by measuring the experimental development of the current in the electrochemical cell during the fabrication process. X-Ray diffraction measurements reveal a different polycrystalline degree for each deposition configuration, indicating that the crystalline structure of the deposited material has been substantially modified. Magnetic measurements show a clear dependence of the anisotropy directions on the orientation of the magnetic field applied during the electrodeposition.

  9. Co/Au multisegmented nanowires: a 3D array of magnetostatically coupled nanopillars

    Bran, C.

    2017-01-31

    Arrays of multisegmented Co/Au nanowires with designed segment lengths and diameters have been prepared by electrodeposition into aluminum oxide templates. The high quality of the Co/Au interface and the crystallographic structure of Co segments have determined by high-resolution transmission electron microscopy. Magnetic hysteresis loop measurements show larger coercivity and squareness of multisegmented nanowires as compared to single segment Co nanowires. The complementary micromagnetic simulations are in good agreement with the experimental results, confirming that the magnetic behavior is defined mainly by magnetostatic coupling between different segments. The proposed structure constitutes an innovative route towards a 3D array of synchronized magnetic nano-oscillators with large potential in nanoelectronics.

  10. Magnetoelectrolysis of Co nanowire arrays grown in a track-etched polycarbonate membrane

    Sanchez-Barriga, J.; Lucas, M.; Rivero, G.; Marin, P.; Hernando, A.

    2007-01-01

    Arrays of Cobalt nanowires with a controlled length of 6μm have been fabricated by electrochemical deposition into the pores of track-etched polycarbonate membranes with a nominal pore diameter of 30nm. The magnetic properties of Co-deposited nanowires and the effects of a magnetic field applied during electrodeposition of the arrays have been studied. An enhancement of the mass deposition rate due to the presence of a 50Oe magnetic field along the nanowire axis has been observed by measuring the experimental development of the current in the electrochemical cell during the fabrication process. X-ray diffraction measurements reveal a different polycrystalline degree for each deposition configuration, indicating that the crystalline structure of the deposited material has been substantially modified. Magnetic measurements show a clear dependence of the anisotropy directions on the orientation of the magnetic field applied during the electrodeposition

  11. Fabrication and photoelectrochemical properties of silicon nanowires/g-C{sub 3}N{sub 4} core/shell arrays

    Chen, Zhen [Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, Guangdong Province (China); Institute of Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, Guangdong Province (China); Ma, Ge [Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, Guangdong Province (China); Chen, Zhihong, E-mail: chenzhihong1227@sina.com [Shenyang Institute of Automation, Guangzhou, Chinese Academy of Sciences, Guangzhou 511458 (China); Zhang, Yongguang [Research Institute for Energy Equipment Materials, Tianjin Key Laboratory of Materials Laminating Fabrication and Interface Control Technology, Hebei University of Technology, Tianjin 300130 (China); Zhang, Zhe [Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, Guangdong Province (China); Gao, Jinwei [Institute of Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, Guangdong Province (China); Meng, Qingguo; Yuan, Mingzhe [Shenyang Institute of Automation, Guangzhou, Chinese Academy of Sciences, Guangzhou 511458 (China); Wang, Xin, E-mail: wangxin@scnu.edu.cn [Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, Guangdong Province (China); Liu, Jun-ming [Institute of Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, Guangdong Province (China); Zhou, Guofu [Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, Guangdong Province (China)

    2017-02-28

    Highlights: • A novel Silicon Nanowires/g-C{sub 3}N{sub 4} core/shell arrays photoanode prepared by a mild and inexpensive metal-catalyzed electroless etching (MCEE) process followed by liquid atomic layer deposition (LALD), wiich is a facile and low-cost method. • In comparison with FTO/g-C{sub 3}N{sub 4} and Si NWs samples, the Si NWs/g-C{sub 3}N{sub 4} samples showed significantly enhanced photocurrent which could be attributed to the SiNWs-based core/shell structure. • A systematical PEC mechanism of the Si NWs/g-C{sub 3}N{sub 4} was proposed is this manuscript. - Abstract: A photoelectrochemical (PEC) cell made of metal-free carbon nitride (g-C{sub 3}N{sub 4}) @siliconnanowire(Si NW) arrays (denoted as Si NWs/g-C{sub 3}N{sub 4}) is presented in this work. The as-prepared photoelectrodes with different mass contents of g-C{sub 3}N{sub 4} have been synthesized via a metal-catalyzed electroless etching (MCEE), liquid atomic layer deposition (LALD) and annealing methods. The amount of g-C{sub 3}N{sub 4} on the Si NW arrays can be controlled by tuning the concentration of the cyanamide solution used in the LALD procedure. The dense and vertically aligned Si NWs/g-C{sub 3}N{sub 4} core/shell nanostructures were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), and X-ray diffraction (XRD). In comparison with FTO/g-C{sub 3}N{sub 4} and Si NW samples, the Si NWs/g-C{sub 3}N{sub 4} samples showed significantly enhanced photocurrents over the entire potential sweep range. Electrochemical impedance spectroscopy (EIS) was conducted to investigate the properties of the charge transfer process, and the results indicated that the enhanced PEC performance may be due to the increased photo-generated interfacial charge transfer between the Si NWs and g-C{sub 3}N{sub 4}. The photocurrent density reached 45 μA/cm{sup 2} under 100 mW/cm{sup 2} (AM 1.5 G) illumination at 0 V (vs. Pt) in neutral Na{sub 2}SO{sub 4} solution (pH ∼ 7

  12. Hierarchically structured Co₃O₄@Pt@MnO₂ nanowire arrays for high-performance supercapacitors.

    Xia, Hui; Zhu, Dongdong; Luo, Zhentao; Yu, Yue; Shi, Xiaoqin; Yuan, Guoliang; Xie, Jianping

    2013-10-17

    Here we proposed a novel architectural design of a ternary MnO2-based electrode - a hierarchical Co3O4@Pt@MnO2 core-shell-shell structure, where the complemental features of the three key components (a well-defined Co3O4 nanowire array on the conductive Ti substrate, an ultrathin layer of small Pt nanoparticles, and a thin layer of MnO2 nanoflakes) are strategically combined into a single entity to synergize and construct a high-performance electrode for supercapacitors. Owing to the high conductivity of the well-defined Co3O4 nanowire arrays, in which the conductivity was further enhanced by a thin metal (Pt) coating layer, in combination with the large surface area provided by the small MnO2 nanoflakes, the as-fabricated Co3O4@Pt@MnO2 nanowire arrays have exhibited high specific capacitances, good rate capability, and excellent cycling stability. The architectural design demonstrated in this study provides a new approach to fabricate high-performance MnO2-based nanowire arrays for constructing next-generation supercapacitors.

  13. Photovoltaic devices based on quantum dot functionalized nanowire arrays embedded in an organic matrix

    Kung, Patrick; Harris, Nicholas; Shen, Gang; Wilbert, David S.; Baughman, William; Balci, Soner; Dawahre, Nabil; Butler, Lee; Rivera, Elmer; Nikles, David; Kim, Seongsin M.

    2012-01-01

    Quantum dot (QD) functionalized nanowire arrays are attractive structures for low cost high efficiency solar cells. QDs have the potential for higher quantum efficiency, increased stability and lifetime compared to traditional dyes, as well as the potential for multiple electron generation per photon. Nanowire array scaffolds constitute efficient, low resistance electron transport pathways which minimize the hopping mechanism in the charge transport process of quantum dot solar cells. However, the use of liquid electrolytes as a hole transport medium within such scaffold device structures have led to significant degradation of the QDs. In this work, we first present the synthesis uniform single crystalline ZnO nanowire arrays and their functionalization with InP/ZnS core-shell quantum dots. The structures are characterized using electron microscopy, optical absorption, photoluminescence and Raman spectroscopy. Complementing photoluminescence, transmission electron microanalysis is used to reveal the successful QD attachment process and the atomistic interface between the ZnO and the QD. Energy dispersive spectroscopy reveals the co-localized presence of indium, phosphorus, and sulphur, suggestive of the core-shell nature of the QDs. The functionalized nanowire arrays are subsequently embedded in a poly-3(hexylthiophene) hole transport matrix with a high degree of polymer infiltration to complete the device structure prior to measurement.

  14. Vertical nanowire arrays as a versatile platform for protein detection and analysis

    Rostgaard, Katrine R.; Frederiksen, Rune S.; Liu, Yi-Chi

    2013-01-01

    solutions. Here we show that vertical arrays of nanowires (NWs) can overcome several bottlenecks of using nanoarrays for extraction and analysis of proteins. The high aspect ratio of the NWs results in a large surface area available for protein immobilization and renders passivation of the surface between...

  15. Wafer-Level Patterned and Aligned Polymer Nanowire/Micro- and Nanotube Arrays on any Substrate

    Morber, Jenny Ruth; Wang, Xudong; Liu, Jin; Snyder, Robert L.; Wang, Zhong Lin

    2009-01-01

    involved a one-step inductively coupled plasma (ICP) reactive ion etching process. The polymer nanowire array was fabricated in an ICP reactive ion milling chamber with a pressure of 10mTorr. Argon (Ar), O 2, and CF4 gases were released into the chamber

  16. Plasma nitriding induced growth of Pt-nanowire arrays as high performance electrocatalysts for fuel cells

    Du, S.; Lin, K.; Malladi, S.R.K.; Lu, Y.; Sun, S.; Xu, Q.; Steinberger-Wilckens, R.; Dong, H.

    2014-01-01

    In this work, we demonstrate an innovative approach, combing a novel active screen plasma (ASP) technique with green chemical synthesis, for a direct fabrication of uniform Pt nanowire arrays on large-area supports. The ASP treatment enables in-situ N-doping and surface modification to the support

  17. Crystallographically driven magnetic behaviour of arrays of monocrystalline Co nanowires

    Ivanov, Yurii P.; Trabada, Daniel G.; Chuvilin, Andrey L.; Kosel, Jü rgen; Chubykalo-Fesenko, Oksana A.; Vá zquez., Manuel M.

    2014-01-01

    Cobalt nanowires, 40 nm in diameter and several micrometers long, have been grown by controlled electrodeposition into ordered anodic alumina templates. The hcp crystal symmetry is tuned by a suitable choice of the electrolyte pH (between 3.5 and 6

  18. Magnetic properties and crystalline structures of Fe{sub 21}Ni{sub 79} nanowire arrays

    Lee, Kwan Hyi; Lee, Woo Young; Lee, Hwa Young; Jeung, Won Young [Korea Institute of Science and Technology, Seoul (Korea, Republic of)

    2002-04-01

    Fe{sub 21}Ni{sub 79} nanowire arrays have been fabricated by the electroforming method using AAO (anodic aluminum oxide) as a template, which was prepared by anodizing the pure aluminum foil. According to the magnetic property of Fe{sub 21}Ni{sub 79} nanowire prepared, it was found to have the coercivity more than 1 kOe due to the shape anisotropy and squareness (Mr/Ms) very close to 1. Especially, it could be noted that Fe{sub 21}Ni{sub 79} nanowire showed the preferred crystallographic orientation of (220). Annealing treatment of Fe{sub 21}Ni{sub 79} nanowire at 500 degree C resulted in the enhancement of coercivity by 18% while the squareness was not varied by annealing treatment. However, the random orientation of Fe{sub 21}Ni{sub 79} disk and the preferred orientation of nanowire arrays were maintained without respect to the annealing treatment up to 500 degree C.

  19. Optical analysis of a III-V-nanowire-array-on-Si dual junction solar cell.

    Chen, Yang; Höhn, Oliver; Tucher, Nico; Pistol, Mats-Erik; Anttu, Nicklas

    2017-08-07

    A tandem solar cell consisting of a III-V nanowire subcell on top of a planar Si subcell is a promising candidate for next generation photovoltaics due to the potential for high efficiency. However, for success with such applications, the geometry of the system must be optimized for absorption of sunlight. Here, we consider this absorption through optics modeling. Similarly, as for a bulk dual-junction tandem system on a silicon bottom cell, a bandgap of approximately 1.7 eV is optimum for the nanowire top cell. First, we consider a simplified system of bare, uncoated III-V nanowires on the silicon substrate and optimize the absorption in the nanowires. We find that an optimum absorption in 2000 nm long nanowires is reached for a dense array of approximately 15 nanowires per square micrometer. However, when we coat such an array with a conformal indium tin oxide (ITO) top contact layer, a substantial absorption loss occurs in the ITO. This ITO could absorb 37% of the low energy photons intended for the silicon subcell. By moving to a design with a 50 nm thick, planarized ITO top layer, we can reduce this ITO absorption to 5%. However, such a planarized design introduces additional reflection losses. We show that these reflection losses can be reduced with a 100 nm thick SiO 2 anti-reflection coating on top of the ITO layer. When we at the same time include a Si 3 N 4 layer with a thickness of 90 nm on the silicon surface between the nanowires, we can reduce the average reflection loss of the silicon cell from 17% to 4%. Finally, we show that different approximate models for the absorption in the silicon substrate can lead to a 15% variation in the estimated photocurrent density in the silicon subcell.

  20. Wafer-Scale High-Throughput Ordered Growth of Vertically Aligned ZnO Nanowire Arrays

    Wei, Yaguang; Wu, Wenzhuo; Guo, Rui; Yuan, Dajun; Das, Suman; Wang, Zhong Lin

    2010-01-01

    -synthesized morphology. The development of textured ZnO seed layers for replacing single crystalline GaN and ZnO substrates extends the large-scale fabrication of vertically aligned ZnO NW arrays on substrates of other materials, such as polymers, Si, and glass

  1. Three-dimensional electrodes for dye-sensitized solar cells: synthesis of indium-tin-oxide nanowire arrays and ITO/TiO2 core-shell nanowire arrays by electrophoretic deposition

    Wang, H-W; Ting, C-F; Hung, M-K; Chiou, C-H; Liu, Y-L; Liu Zongwen; Ratinac, Kyle R; Ringer, Simon P

    2009-01-01

    Dye-sensitized solar cells (DSSCs) show promise as a cheaper alternative to silicon-based photovoltaics for specialized applications, provided conversion efficiency can be maximized and production costs minimized. This study demonstrates that arrays of nanowires can be formed by wet-chemical methods for use as three-dimensional (3D) electrodes in DSSCs, thereby improving photoelectric conversion efficiency. Two approaches were employed to create the arrays of ITO (indium-tin-oxide) nanowires or arrays of ITO/TiO 2 core-shell nanowires; both methods were based on electrophoretic deposition (EPD) within a polycarbonate template. The 3D electrodes for solar cells were constructed by using a doctor-blade for coating TiO 2 layers onto the ITO or ITO/TiO 2 nanowire arrays. A photoelectric conversion efficiency as high as 4.3% was achieved in the DSSCs made from ITO nanowires; this performance was better than that of ITO/TiO 2 core-shell nanowires or pristine TiO 2 films. Cyclic voltammetry confirmed that the reaction current was significantly enhanced when a 3D ITO-nanowire electrode was used. Better separation of charge carriers and improved charge transport, due to the enlarged interfacial area, are thought to be the major advantages of using 3D nanowire electrodes for the optimization of DSSCs.

  2. Fabrication of ZnO Nanowires Arrays by Anodization and High-Vacuum Die Casting Technique, and Their Piezoelectric Properties

    Kuo, Chin-Guo; Chang, Ho; Wang, Jian-Hao

    2016-01-01

    In this investigation, anodic aluminum oxide (AAO) with arrayed and regularly arranged nanopores is used as a template in the high-vacuum die casting of molten zinc metal (Zn) into the nanopores. The proposed technique yields arrayed Zn nanowires with an aspect ratio of over 600. After annealing, arrayed zinc oxide (ZnO) nanowires are obtained. Varying the anodizing time yields AAO templates with thicknesses of approximately 50 μm, 60 μm, and 70 μm that can be used in the fabrication of nanowires of three lengths with high aspect ratios. Experimental results reveal that a longer nanowire generates a greater measured piezoelectric current. The ZnO nanowires that are fabricated using an alumina template are anodized for 7 h and produce higher piezoelectric current of up to 69 pA. PMID:27023546

  3. Fabrication of ZnO Nanowires Arrays by Anodization and High-Vacuum Die Casting Technique, and Their Piezoelectric Properties

    Chin-Guo Kuo

    2016-03-01

    Full Text Available In this investigation, anodic aluminum oxide (AAO with arrayed and regularly arranged nanopores is used as a template in the high-vacuum die casting of molten zinc metal (Zn into the nanopores. The proposed technique yields arrayed Zn nanowires with an aspect ratio of over 600. After annealing, arrayed zinc oxide (ZnO nanowires are obtained. Varying the anodizing time yields AAO templates with thicknesses of approximately 50 μm, 60 μm, and 70 μm that can be used in the fabrication of nanowires of three lengths with high aspect ratios. Experimental results reveal that a longer nanowire generates a greater measured piezoelectric current. The ZnO nanowires that are fabricated using an alumina template are anodized for 7 h and produce higher piezoelectric current of up to 69 pA.

  4. Fabrication of ZnO Nanowires Arrays by Anodization and High-Vacuum Die Casting Technique, and Their Piezoelectric Properties.

    Kuo, Chin-Guo; Chang, Ho; Wang, Jian-Hao

    2016-03-24

    In this investigation, anodic aluminum oxide (AAO) with arrayed and regularly arranged nanopores is used as a template in the high-vacuum die casting of molten zinc metal (Zn) into the nanopores. The proposed technique yields arrayed Zn nanowires with an aspect ratio of over 600. After annealing, arrayed zinc oxide (ZnO) nanowires are obtained. Varying the anodizing time yields AAO templates with thicknesses of approximately 50 μm, 60 μm, and 70 μm that can be used in the fabrication of nanowires of three lengths with high aspect ratios. Experimental results reveal that a longer nanowire generates a greater measured piezoelectric current. The ZnO nanowires that are fabricated using an alumina template are anodized for 7 h and produce higher piezoelectric current of up to 69 pA.

  5. Temperature dependence of magnetization reversal in Co and Fe3O4 nanowire arrays

    Kazakova, Olga; Erts, Donats; Crowley, Timothy A.; Kulkarni, Jaideep S.; Holmes, Justin D.

    2005-01-01

    In this paper, we investigate the magnetization reversal of cobalt and magnetite nanowires, 4 nm in diameter, synthesized within the pores of mesoporous silica thin films. A SQUID magnetometer was used to study the magnetic properties of the nanowire arrays over a broad temperature interval, T=1.8-300 K. The magnetization reversal process was found to be strongly temperature dependent. While a coherent rotation may occur at room temperature, a process involving the formation of domain structures takes place as the temperature decreases down to 1.8 K

  6. High-Performance Carbon Dioxide Electrocatalytic Reduction by Easily Fabricated Large-Scale Silver Nanowire Arrays.

    Luan, Chuhao; Shao, Yang; Lu, Qi; Gao, Shenghan; Huang, Kai; Wu, Hui; Yao, Kefu

    2018-05-17

    An efficient and selective catalyst is in urgent need for carbon dioxide electroreduction and silver is one of the promising candidates with affordable costs. Here we fabricated large-scale vertically standing Ag nanowire arrays with high crystallinity and electrical conductivity as carbon dioxide electroreduction catalysts by a simple nanomolding method that was usually considered not feasible for metallic crystalline materials. A great enhancement of current densities and selectivity for CO at moderate potentials was achieved. The current density for CO ( j co ) of Ag nanowire array with 200 nm in diameter was more than 2500 times larger than that of Ag foil at an overpotential of 0.49 V with an efficiency over 90%. The origin of enhanced performances are attributed to greatly increased electrochemically active surface area (ECSA) and higher intrinsic activity compared to those of polycrystalline Ag foil. More low-coordinated sites on the nanowires which can stabilize the CO 2 intermediate better are responsible for the high intrinsic activity. In addition, the impact of surface morphology that induces limited mass transportation on reaction selectivity and efficiency of nanowire arrays with different diameters was also discussed.

  7. Titanium dioxide nanowire sensor array integration on CMOS platform using deterministic assembly.

    Gall, Oren Z; Zhong, Xiahua; Schulman, Daniel S; Kang, Myungkoo; Razavieh, Ali; Mayer, Theresa S

    2017-06-30

    Nanosensor arrays have recently received significant attention due to their utility in a wide range of applications, including gas sensing, fuel cells, internet of things, and portable health monitoring systems. Less attention has been given to the production of sensor platforms in the μW range for ultra-low power applications. Here, we discuss how to scale the nanosensor energy demand by developing a process for integration of nanowire sensing arrays on a monolithic CMOS chip. This work demonstrates an off-chip nanowire fabrication method; subsequently nanowires link to a fused SiO 2 substrate using electric-field assisted directed assembly. The nanowire resistances shown in this work have the highest resistance uniformity reported to date of 18%, which enables a practical roadmap towards the coupling of nanosensors to CMOS circuits and signal processing systems. The article also presents the utility of optimizing annealing conditions of the off-chip metal-oxides prior to CMOS integration to avoid limitations of thermal budget and process incompatibility. In the context of the platform demonstrated here, directed assembly is a powerful tool that can realize highly uniform, cross-reactive arrays of different types of metal-oxide nanosensors suited for gas discrimination and signal processing systems.

  8. Crystallographically driven magnetic behaviour of arrays of monocrystalline Co nanowires

    Ivanov, Yurii P.

    2014-11-07

    Cobalt nanowires, 40 nm in diameter and several micrometers long, have been grown by controlled electrodeposition into ordered anodic alumina templates. The hcp crystal symmetry is tuned by a suitable choice of the electrolyte pH (between 3.5 and 6.0) during growth. Systematic high resolution transmission electron microscopy imaging and analysis of the electron diffraction patterns reveals a dependence of crystal orientation from electrolyte pH. The tailored modification of the crystalline signature results in the reorientation of the magnetocrystalline anisotropy and increasing experimental coercivity and squareness with decreasing polar angle of the \\'c\\' growth axis. Micromagnetic modeling of the demagnetization process and its angular dependence is in agreement with the experiment and allows us to establish the change in the character of the magnetization reversal: from quasi-curling to vortex domain wall propagation modes when the crystal \\'c\\' axis tilts more than 75° in respect to the nanowire axis.

  9. Magnetic behavior of NixFe(100-x) (65=nanowire arrays

    Navas, D.; Asenjo, A.; Jaafar, M.; Pirota, K.R.; Hernandez-Velez, M.; Sanz, R.; Lee, W.; Nielsch, K.; Batallan, F.; Vazquez, M.

    2005-01-01

    Arrays of magnetic nanowires with composition Ni x Fe (100-x) (65= 2 and 105nm lattice parameter of hexagonal symmetry, is achieved by self-ordering process, and characterized by SEM and AFM. Magnetic behavior of the arrays has been determined by VSM. Maximum coercivity of around 1.23kOe and reduced remanence (about 0.8 saturation magnetization) is observed for x=77, while minimum values are observed for x=100. Detailed AFM and MFM studies allow us to gain additional information of the filling degree of pores which can result in a distributed nanowires length that finally correlates with a deterioration of macroscopic magnetic behavior of the array

  10. Ultradense, Deep Subwavelength Nanowire Array Photovoltaics As Engineered Optical Thin Films

    Tham, Douglas

    2010-11-10

    A photovoltaic device comprised of an array of 20 nm wide, 32 nm pitch array of silicon nanowires is modeled as an optical material. The nanowire array (NWA) has characteristic device features that are deep in the subwavelength regime for light, which permits a number of simplifying approximations. Using photocurrent measurements as a probe of the absorptance, we show that the NWA optical properties can be accurately modeled with rigorous coupled-wave analysis. The densely structured NWAs behave as homogeneous birefringent materials into the ultraviolet with effective optical properties that are accurately modeled using the dielectric functions of bulk Si and SiO 2, coupled with a physical model for the NWA derived from ellipsometry and transmission electron microscopy. © 2010 American Chemical Society.

  11. One-step synthesis of CdTe branched nanowires and nanorod arrays

    Hou Junwei; Yang Xiuchun; Lv Xiaoyi; Peng Dengfeng; Huang Min; Wang Qingyao

    2011-01-01

    Single crystalline CdTe branched nanowires and well-aligned nanorod arrays were simultaneously synthesized by a simple chemical vapor deposition (CVD) technique. X-ray diffraction (XRD), scanning electronic microscopy (SEM), transmission electronic microscopy (TEM) and selected area electronic diffraction (SAED) were used to study the crystalline structure, composition and morphology of different samples. Vapor-liquid-solid (VLS) and vapor-solid (VS) processes were proposed for the formation of the CdTe branched nanowires and nanorod arrays, respectively. As-grown CdTe nanorod arrays show a strong red emission band centered at about 620 nm, which can be well fitted by two Gaussian curves centered at 610 nm and 635 nm, respectively.

  12. ZnTe Amorphous Semiconductor Nanowires Array Electrodeposited into Polycarbonate Membrane Thin Films

    Ohgai, T; Ikeda, T; Ohta, J

    2013-01-01

    ZnTe amorphous semiconductor nanowires array was electrodeposited into the nanochannels of ion-track etched polycarbonate membrane thin films from acidic aqueous solution at 313 K. ZnTe electrodeposits with Zn-rich composition was obtained over the wide range of cathode potential from −0.8 V to −1.1 V and the growth rate of ZnTe amorphous nanowires was around 3 nm.sec −1 at the cathode potential of −0.8 V. Cylindrical shape of the nanowires was precisely transferred from the nanochannels and the aspect ratio reached up to ca. 40. ZnTe amorphous phase electrodeposited at 313 K was crystallized by annealing at 683 K and the band gap energy of ZnTe crystalline phase reached up to ca. 2.13 eV.

  13. Dynamical formation of spatially localized arrays of aligned nanowires in plastic films with magnetic anisotropy.

    Fragouli, Despina; Buonsanti, Raffaella; Bertoni, Giovanni; Sangregorio, Claudio; Innocenti, Claudia; Falqui, Andrea; Gatteschi, Dante; Cozzoli, Pantaleo Davide; Athanassiou, Athanassia; Cingolani, Roberto

    2010-04-27

    We present a simple technique for magnetic-field-induced formation, assembling, and positioning of magnetic nanowires in a polymer film. Starting from a polymer/iron oxide nanoparticle casted solution that is allowed to dry along with the application of a weak magnetic field, nanocomposite films incorporating aligned nanocrystal-built nanowire arrays are obtained. The control of the dimensions of the nanowires and of their localization across the polymer matrix is achieved by varying the duration of the applied magnetic field, in combination with the evaporation dynamics. These multifunctional anisotropic free-standing nanocomposite films, which demonstrate high magnetic anisotropy, can be used in a wide field of technological applications, ranging from sensors to microfluidics and magnetic devices.

  14. A top-down approach to fabrication of high quality vertical heterostructure nanowire arrays.

    Wang, Hua; Sun, Minghua; Ding, Kang; Hill, Martin T; Ning, Cun-Zheng

    2011-04-13

    We demonstrate a novel top-down approach for fabricating nanowires with unprecedented complexity and optical quality by taking advantage of a nanoscale self-masking effect. We realized vertical arrays of nanowires of 20-40 nm in diameter with 16 segments of complex longitudinal InGaAsP/InP structures. The unprecedented high quality of etched wires is evidenced by the narrowest photoluminescence linewidth ever produced in similar wavelengths, indistinguishable from that of the corresponding wafer. This top-down, mask-free, large scale approach is compatible with the established device fabrication processes and could serve as an important alternative to the bottom-up approach, significantly expanding ranges and varieties of applications of nanowire technology.

  15. Transparent arrays of silver nanowire rings driven by evaporation of sessile droplets

    Wang, Xiaofeng; Kang, Giho; Seong, Baekhoon; Chae, Illkyeong; Teguh Yudistira, Hadi; Lee, Hyungdong; Kim, Hyunggun; Byun, Doyoung

    2017-11-01

    A coffee-ring pattern can be yielded on the three-phase contact line following evaporation of sessile droplets with suspended insoluble solutes, such as particles, DNA molecules, and mammalian cells. The formation of such coffee-ring, together with their suppression has been applied in printing and coating technologies. We present here an experimental study on the assembly of silver nanowires inside an evaporating droplet of a colloidal suspension. The effects of nanowire length and concentration on coffee-ring formation of the colloidal suspension were investigated. Several sizes of NWs with an aspect ratio between 50 and 1000 were systematically investigated to fabricate coffee-ring patterns. Larger droplets containing shorter nanowires formed clearer ring deposits after evaporation. An order-to-disorder transition of the nanowires’ alignment was found inside the rings. A printing technique with the evaporation process enabled fabrication of arrays of silver nanowire rings. We could manipulate the patterns silver nanowire rings, which might be applied to the transparent and flexible electrode.

  16. Transparent arrays of silver nanowire rings driven by evaporation of sessile droplets

    Wang, Xiaofeng; Kang, Giho; Seong, Baekhoon; Chae, Illkyeong; Yudistira, Hadi Teguh; Lee, Hyungdong; Byun, Doyoung; Kim, Hyunggun

    2017-01-01

    A coffee-ring pattern can be yielded on the three-phase contact line following evaporation of sessile droplets with suspended insoluble solutes, such as particles, DNA molecules, and mammalian cells. The formation of such coffee-ring, together with their suppression has been applied in printing and coating technologies. We present here an experimental study on the assembly of silver nanowires inside an evaporating droplet of a colloidal suspension. The effects of nanowire length and concentration on coffee-ring formation of the colloidal suspension were investigated. Several sizes of NWs with an aspect ratio between 50 and 1000 were systematically investigated to fabricate coffee-ring patterns. Larger droplets containing shorter nanowires formed clearer ring deposits after evaporation. An order-to-disorder transition of the nanowires’ alignment was found inside the rings. A printing technique with the evaporation process enabled fabrication of arrays of silver nanowire rings. We could manipulate the patterns silver nanowire rings, which might be applied to the transparent and flexible electrode. (paper)

  17. Improved photocatalytic activity of highly ordered TiO{sub 2} nanowire arrays for methylene blue degradation

    Lv, Xiaojun, E-mail: xjlv@mail.ipc.ac.cn [Technical Institute of Physics and Chemistry, Key Laboratory of Photochemical Conversion and Optoelectronic Materials and HKU-CAS Joint Laboratory on New Materials, Chinese Academy of Sciences, Beijing 100190 (China); Zhang, Hao; Chang, Haixin [WPI-Advanced Institute for Materials Research, Tohoku University, Sendai 980-8578 (Japan)

    2012-10-15

    Although many efforts have been done on the photocatalytic properties of anodic TiO{sub 2} nanotubes, much less work is done on the photocatalytic performance of TiO{sub 2} nanowires. Self-organized anodic TiO{sub 2} nanowire arrays have been fabricated using a simple electrochemical approach and used as photocatalysts in photodegradation of methylene blue (MB) dyes. Here we found for the first time TiO{sub 2} nanowires have better photocatalytic properties and incident photon-to-current efficiency (IPCE) than TiO{sub 2} nanotubes. N doped TiO{sub 2} nanowires showed further enhancement in photodegradation activity and photocurrent response in the visible region. Such TiO{sub 2} nanowires are expected to have great potential in photodegradation of pollutants, photovoltaic solar energy conversion and water splitting for hydrogen generation as well. -- Highlights: Black-Right-Pointing-Pointer TiO{sub 2} nanowire arrays electrode fabricated via anodizing Ti foil. Black-Right-Pointing-Pointer TiO{sub 2} nanowire arrays have higher photodegradation activity. Black-Right-Pointing-Pointer N doped TiO{sub 2} nanowires enhanced visible-light photocatalytic activity.

  18. Multi-peak ferromagnetic resonance in Co nanowires array

    Kraus, Luděk; Lynnyková, Anna; Azamat, Dmitry; Drahokoupil, Jan; Kopeček, Jaromír; Rameš, Michal

    2017-01-01

    Roč. 421, Jan (2017), s. 241-249 ISSN 0304-8853 R&D Projects: GA MŠk LO1409; GA MŠk LM2015088; GA ČR GAP102/12/2177 Grant - others:FUNBIO(XE) CZ.2.16/3.1.00/21568 Institutional support: RVO:68378271 Keywords : nanowires * ferromagnetic resonance * dipolar interactions * surface anisotropy * spin waves Subject RIV: JB - Sensors, Measurment, Regulation OBOR OECD: Electrical and electronic engineering Impact factor: 2.630, year: 2016

  19. Angular dependence of the coercivity and remanence of ordered arrays of Co nanowires

    Lavín, R.; Gallardo, C.; Palma, J.L.; Escrig, J.; Denardin, J.C.

    2012-01-01

    The angular dependence of the coercivity and remanence of ordered hexagonal arrays of Co nanowires prepared using anodic aluminum oxide templates was investigated. The experimental evolution of coercivity as a function of the angle, in which the external field is applied, is interpreted considering micromagnetic simulations. Depending on the angle between the axis of the wire and the applied magnetic field direction our results show that the magnetization reversal mode changes from vortex to a transverse domain wall. Besides, we observed that the dipolar interactions cause a reduction in coercive fields, mainly in the direction of easy magnetization of the nanowires. Good agreement between numerical and experimental data is obtained. - Highlights: ► Angular dependence of the coercivity and remanence of Co nanowire arrays. ► Results show that the magnetization reversal mode changes from vortex to a transverse domain wall. ► Dipolar interactions cause a reduction in coercive fields, which is the strongest in the direction of easy magnetization of the nanowire.

  20. Angular dependence of the coercivity and remanence of ordered arrays of Co nanowires

    Lavin, R. [Departamento de Fisica, Universidad de Santiago de Chile, USACH, Av. Ecuador 3493, Santiago (Chile); Facultad de Ingenieria, Universidad Diego Portales, UDP, Ejercito 441, Santiago (Chile); Gallardo, C.; Palma, J.L. [Departamento de Fisica, Universidad de Santiago de Chile, USACH, Av. Ecuador 3493, Santiago (Chile); Escrig, J. [Departamento de Fisica, Universidad de Santiago de Chile, USACH, Av. Ecuador 3493, Santiago (Chile); Center for the Development of Nanoscience and Nanotechnology, CEDENNA, Av. Ecuador 3493, Santiago (Chile); Denardin, J.C., E-mail: jcdenardin@gmail.com [Departamento de Fisica, Universidad de Santiago de Chile, USACH, Av. Ecuador 3493, Santiago (Chile); Center for the Development of Nanoscience and Nanotechnology, CEDENNA, Av. Ecuador 3493, Santiago (Chile)

    2012-08-15

    The angular dependence of the coercivity and remanence of ordered hexagonal arrays of Co nanowires prepared using anodic aluminum oxide templates was investigated. The experimental evolution of coercivity as a function of the angle, in which the external field is applied, is interpreted considering micromagnetic simulations. Depending on the angle between the axis of the wire and the applied magnetic field direction our results show that the magnetization reversal mode changes from vortex to a transverse domain wall. Besides, we observed that the dipolar interactions cause a reduction in coercive fields, mainly in the direction of easy magnetization of the nanowires. Good agreement between numerical and experimental data is obtained. - Highlights: Black-Right-Pointing-Pointer Angular dependence of the coercivity and remanence of Co nanowire arrays. Black-Right-Pointing-Pointer Results show that the magnetization reversal mode changes from vortex to a transverse domain wall. Black-Right-Pointing-Pointer Dipolar interactions cause a reduction in coercive fields, which is the strongest in the direction of easy magnetization of the nanowire.

  1. Diameter- and current-density-dependent growth orientation of hexagonal CdSe nanowire arrays via electrodeposition

    Sun Hongyu; Li Xiaohong; Chen Yan; Guo Defeng; Xie Yanwu; Li Wei; Zhang Xiangyi; Liu Baoting

    2009-01-01

    Controlling the growth orientation of semiconductor nanowire arrays is of vital importance for their applications in the fields of nanodevices. In the present work, hexagonal CdSe nanowire arrays with various preferential growth orientations have been successfully yielded by employing the electrodeposition technique using porous alumina as templates (PATs). We demonstrate by experimental and theoretical efforts that the growth orientation of the CdSe nanowires can be effectively manipulated by varying either the nanopore diameter of the PATs or the deposited current density, which has significant effects on the optical properties of the CdSe nanowires. The present study provides an alternative approach to tuning the growth direction of electrodeposited nanowires and thus is of importance for the fabrication of nanodevices with controlled functional properties.

  2. Diameter- and current-density-dependent growth orientation of hexagonal CdSe nanowire arrays via electrodeposition

    Sun Hongyu; Li Xiaohong; Chen Yan; Guo Defeng; Xie Yanwu; Li Wei; Zhang Xiangyi [State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004 (China); Liu Baoting, E-mail: xyzh66@ysu.edu.c [College of Physics Science and Technology, Hebei University, Baoding 071002 (China)

    2009-10-21

    Controlling the growth orientation of semiconductor nanowire arrays is of vital importance for their applications in the fields of nanodevices. In the present work, hexagonal CdSe nanowire arrays with various preferential growth orientations have been successfully yielded by employing the electrodeposition technique using porous alumina as templates (PATs). We demonstrate by experimental and theoretical efforts that the growth orientation of the CdSe nanowires can be effectively manipulated by varying either the nanopore diameter of the PATs or the deposited current density, which has significant effects on the optical properties of the CdSe nanowires. The present study provides an alternative approach to tuning the growth direction of electrodeposited nanowires and thus is of importance for the fabrication of nanodevices with controlled functional properties.

  3. Wafer-Level Patterned and Aligned Polymer Nanowire/Micro- and Nanotube Arrays on any Substrate

    Morber, Jenny Ruth

    2009-05-25

    A study was conducted to fabricate wafer-level patterned and aligned polymer nanowire (PNW), micro- and nanotube arrays (PNT), which were created by exposing the polymer material to plasma etching. The approach for producing wafer-level aligned PNWs involved a one-step inductively coupled plasma (ICP) reactive ion etching process. The polymer nanowire array was fabricated in an ICP reactive ion milling chamber with a pressure of 10mTorr. Argon (Ar), O 2, and CF4 gases were released into the chamber as etchants at flow rates of 15 sccm, 10 sccm, and 40 sccm. Inert gasses, such as Ar-form positive ions were incorporated to serve as a physical component to assist in the material degradation process. One power source (400 W) was used to generate dense plasma from the input gases, while another power source applied a voltage of approximately 600V to accelerate the plasma toward the substrate.

  4. High reproducibility and sensitivity of bifacial copper nanowire array for detection of glucose

    Hanqing Zhang

    2017-06-01

    Full Text Available The ordered bifacial copper nanowire array (Cu BNWA was synthesized by a template assisted electrochemical deposition method. The morphology and structure of the as-prepared samples were investigated by field emission scanning electron microscope (FESEM and X-ray diffraction (XRD. The results show that the ordered Cu nanowire array with uniform geometrical dimensions covered both side of the Cu substrate. When used as the electrode for glucose detection, the minimum detectable concentration of glucose can be reached as low as 0.2 mM. Impressively, the sample still showed high sensitivity and stability for glucose detection after two months placement in ambient environment. These excellent performances of the Cu BNWA make it a promising non-enzyme glucose detection sensor for various applications.

  5. Controllable fabrication of ultrafine oblique organic nanowire arrays and their application in energy harvesting

    Zhang, Lu; Cheng, Li; Bai, Suo; Su, Chen; Chen, Xiaobo; Qin, Yong

    2015-01-01

    Ultrafine organic nanowire arrays (ONWAs) with a controlled direction were successfully fabricated by a novel one-step Faraday cage assisted plasma etching method. The mechanism of formation of nanowire arrays is proposed; the obliquity and aspect ratio can be accurately controlled from approximately 0° to 90° via adjusting the angle of the sample and the etching time, respectively. In addition, the ONWAs were further utilized to improve the output of the triboelectric nanogenerator (TENG). Compared with the output of TENG composed of vertical ONWAs, the open-circuit voltage, short-circuit current and inductive charges were improved by 73%, 150% and 98%, respectively. This research provides a convenient and practical method to fabricate ONWAs with various obliquities on different materials, which can be used for energy harvesting.

  6. Ultrahigh Density Array of Vertically Aligned Small-molecular Organic Nanowires on Arbitrary Substrates

    Starko-Bowes, Ryan; Pramanik, Sandipan

    2013-01-01

    In recent years π-conjugated organic semiconductors have emerged as the active material in a number of diverse applications including large-area, low-cost displays, photovoltaics, printable and flexible electronics and organic spin valves. Organics allow (a) low-cost, low-temperature processing and (b) molecular-level design of electronic, optical and spin transport characteristics. Such features are not readily available for mainstream inorganic semiconductors, which have enabled organics to carve a niche in the silicon-dominated electronics market. The first generation of organic-based devices has focused on thin film geometries, grown by physical vapor deposition or solution processing. However, it has been realized that organic nanostructures can be used to enhance performance of above-mentioned applications and significant effort has been invested in exploring methods for organic nanostructure fabrication. A particularly interesting class of organic nanostructures is the one in which vertically oriented organic nanowires, nanorods or nanotubes are organized in a well-regimented, high-density array. Such structures are highly versatile and are ideal morphological architectures for various applications such as chemical sensors, split-dipole nanoantennas, photovoltaic devices with radially heterostructured "core-shell" nanowires, and memory devices with a cross-point geometry. Such architecture is generally realized by a template-directed approach. In the past this method has been used to grow metal and inorganic semiconductor nanowire arrays. More recently π-conjugated polymer nanowires have been grown within nanoporous templates. However, these approaches have had limited success in growing nanowires of technologically important π-conjugated small molecular weight organics, such as tris-8-hydroxyquinoline aluminum (Alq3), rubrene and methanofullerenes, which are commonly used in diverse areas including organic displays, photovoltaics, thin film transistors

  7. Highly ordered Pd nanowire arrays as effective electrocatalysts for ethanol oxidation in direct alcohol fuel cells

    Xu, C.W. [School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Wang, H. [Departement of Applied Chemistry, Dongguan University of Technology, Dongguan 523106 (China); Shen, P.K. [School of Physics and Engineering, Sun Yet-Sen University, Guangzhou 510275 (China); Jiang, S.P.

    2007-12-03

    Pd nanowire arrays (NWAs) with high electrochemically active surface area are successfully fabricated using anodized aluminum oxide electrodeposition. The electrocatalytic activity and stability of the Pd NWAs for ethanol electrooxidation are not only significantly higher that of conventional Pd film electrodes, but also higher than that of well-established commercial PtRu/C electrocatalysts. The Pd NWAs show great potential as electrocatalysts for ethanol electrooxidation in alkaline media in direct ethanol fuel cells. (Abstract Copyright [2007], Wiley Periodicals, Inc.)

  8. Carbon-layer-protected cuprous oxide nanowire arrays for efficient water reduction

    Zhang, Zhonghai

    2013-02-26

    In this work, we propose a solution-based carbon precursor coating and subsequent carbonization strategy to form a thin protective carbon layer on unstable semiconductor nanostructures as a solution to the commonly occurring photocorrosion problem of many semiconductors. A proof-of-concept is provided by using glucose as the carbon precursor to form a protective carbon coating onto cuprous oxide (Cu2O) nanowire arrays which were synthesized from copper mesh. The carbon-layer-protected Cu2O nanowire arrays exhibited remarkably improved photostability as well as considerably enhanced photocurrent density. The Cu2O nanowire arrays coated with a carbon layer of 20 nm thickness were found to give an optimal water splitting performance, producing a photocurrent density of -3.95 mA cm-2 and an optimal photocathode efficiency of 0.56% under illumination of AM 1.5G (100 mW cm-2). This is the highest value ever reported for a Cu 2O-based electrode coated with a metal/co-catalyst-free protective layer. The photostability, measured as the percentage of the photocurrent density at the end of 20 min measurement period relative to that at the beginning of the measurement, improved from 12.6% on the bare, nonprotected Cu2O nanowire arrays to 80.7% on the continuous carbon coating protected ones, more than a 6-fold increase. We believe that the facile strategy presented in this work is a general approach that can address the stability issue of many nonstable photoelectrodes and thus has the potential to make a meaningful contribution in the general field of energy conversion. © 2013 American Chemical Society.

  9. Energy penetration into arrays of aligned nanowires irradiated with relativistic intensities: Scaling to terabar pressures.

    Bargsten, Clayton; Hollinger, Reed; Capeluto, Maria Gabriela; Kaymak, Vural; Pukhov, Alexander; Wang, Shoujun; Rockwood, Alex; Wang, Yong; Keiss, David; Tommasini, Riccardo; London, Richard; Park, Jaebum; Busquet, Michel; Klapisch, Marcel; Shlyaptsev, Vyacheslav N; Rocca, Jorge J

    2017-01-01

    Ultrahigh-energy density (UHED) matter, characterized by energy densities >1 × 10 8 J cm -3 and pressures greater than a gigabar, is encountered in the center of stars and inertial confinement fusion capsules driven by the world's largest lasers. Similar conditions can be obtained with compact, ultrahigh contrast, femtosecond lasers focused to relativistic intensities onto targets composed of aligned nanowire arrays. We report the measurement of the key physical process in determining the energy density deposited in high-aspect-ratio nanowire array plasmas: the energy penetration. By monitoring the x-ray emission from buried Co tracer segments in Ni nanowire arrays irradiated at an intensity of 4 × 10 19 W cm -2 , we demonstrate energy penetration depths of several micrometers, leading to UHED plasmas of that size. Relativistic three-dimensional particle-in-cell simulations, validated by these measurements, predict that irradiation of nanostructures at intensities of >1 × 10 22 W cm -2 will lead to a virtually unexplored extreme UHED plasma regime characterized by energy densities in excess of 8 × 10 10 J cm -3 , equivalent to a pressure of 0.35 Tbar.

  10. Single crystalline cylindrical nanowires – toward dense 3D arrays of magnetic vortices

    Ivanov, Yurii P.

    2016-03-31

    Magnetic vortex-based media have recently been proposed for several applications of nanotechnology; however, because lithography is typically used for their preparation, their low-cost, large-scale fabrication is a challenge. One solution may be to use arrays of densely packed cobalt nanowires that have been efficiently fabricated by electrodeposition. In this work, we present this type of nanoscale magnetic structures that can hold multiple stable magnetic vortex domains at remanence with different chiralities. The stable vortex state is observed in arrays of monocrystalline cobalt nanowires with diameters as small as 45 nm and lengths longer than 200 nm with vanishing magnetic cross talk between closely packed neighboring wires in the array. Lorentz microscopy, electron holography and magnetic force microscopy, supported by micromagnetic simulations, show that the structure of the vortex state can be adjusted by varying the aspect ratio of the nanowires. The data we present here introduce a route toward the concept of 3-dimensional vortex-based magnetic memories.

  11. Plasma nitriding induced growth of Pt-nanowire arrays as high performance electrocatalysts for fuel cells

    Du, Shangfeng; Lin, Kaijie; Malladi, Sairam K.; Lu, Yaxiang; Sun, Shuhui; Xu, Qiang; Steinberger-Wilckens, Robert; Dong, Hanshan

    2014-09-01

    In this work, we demonstrate an innovative approach, combing a novel active screen plasma (ASP) technique with green chemical synthesis, for a direct fabrication of uniform Pt nanowire arrays on large-area supports. The ASP treatment enables in-situ N-doping and surface modification to the support surface, significantly promoting the uniform growth of tiny Pt nuclei which directs the growth of ultrathin single-crystal Pt nanowire (2.5-3 nm in diameter) arrays, forming a three-dimensional (3D) nano-architecture. Pt nanowire arrays in-situ grown on the large-area gas diffusion layer (GDL) (5 cm2) can be directly used as the catalyst electrode in fuel cells. The unique design brings in an extremely thin electrocatalyst layer, facilitating the charge transfer and mass transfer properties, leading to over two times higher power density than the conventional Pt nanoparticle catalyst electrode in real fuel cell environment. Due to the similar challenges faced with other nanostructures and the high availability of ASP for other material surfaces, this work will provide valuable insights and guidance towards the development of other new nano-architectures for various practical applications.

  12. Energy Penetration into Arrays of Aligned Nanowires Irradiated with Relativistic Intensities: Scaling to Terabar Pressures

    Bargsten, Clayton [Colorado State Univ., Fort Collins, CO (United States); Hollinger, Reed [Colorado State Univ., Fort Collins, CO (United States); Capeluto, Maria Gabriela [Univ. of Buenos Aires (Argentina); Kaymak, Vural [Heinrich Heine Univ., Dusseldorf (Germany); Pukhov, Alexander [Heinrich Heine Univ., Dusseldorf (Germany); Wang, Shoujun [Colorado State Univ., Fort Collins, CO (United States); Rockwood, Alex [Colorado State Univ., Fort Collins, CO (United States); Wang, Yong [Colorado State Univ., Fort Collins, CO (United States); Keiss, David [Colorado State Univ., Fort Collins, CO (United States); Tommasini, Riccardo [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); London, Richard [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Park, Jaebum [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Busquet, Michel [ARTEP Inc., Ellicott City, MD (United States); Klapisch, M [ARTEP Inc., Ellicott City, MD (United States); Shlyaptsev, Vyacheslav N. [Colorado State Univ., Fort Collins, CO (United States); Rocca, Jorge J. [Colorado State Univ., Fort Collins, CO (United States)

    2016-11-11

    Ultra-high-energy-density (UHED) matter, characterized by energy densities > 1 x 108 J cm-3 and pressures greater than a gigabar, is encountered in the center of stars and in inertial confinement fusion capsules driven by the world’s largest lasers. Similar conditions can be obtained with compact, ultra-high contrast, femtosecond lasers focused to relativistic intensities onto targets composed of aligned nanowire arrays. Here we report the measurement of the key physical process in determining the energy density deposited in high aspect ratio nanowire array plasmas: the energy penetration. By monitoring the x-ray emission from buried Co tracer segments in Ni nanowire arrays irradiated at an intensity of 4 x 1019 W cm-2, we demonstrate energy penetration depths of several μm, leading to UHED plasmas of that size. Relativistic 3D particle-in-cell-simulations, validated by these measurements, predict that irradiation of nanostructures at intensities of > 1 x 1022 W cm-2 will lead to a virtually unexplored extreme UHED plasma regime characterized by energy densities in excess of 8 x 1010 J cm-3, equivalent to a pressure of 0.35 Tbar.

  13. Single crystalline cylindrical nanowires – toward dense 3D arrays of magnetic vortices

    Ivanov, Yurii P.; Chuvilin, Andrey; Vivas, Laura G.; Kosel, Jü rgen; Chubykalo-Fesenko, Oksana; Vá zquez, Manuel

    2016-01-01

    Magnetic vortex-based media have recently been proposed for several applications of nanotechnology; however, because lithography is typically used for their preparation, their low-cost, large-scale fabrication is a challenge. One solution may be to use arrays of densely packed cobalt nanowires that have been efficiently fabricated by electrodeposition. In this work, we present this type of nanoscale magnetic structures that can hold multiple stable magnetic vortex domains at remanence with different chiralities. The stable vortex state is observed in arrays of monocrystalline cobalt nanowires with diameters as small as 45 nm and lengths longer than 200 nm with vanishing magnetic cross talk between closely packed neighboring wires in the array. Lorentz microscopy, electron holography and magnetic force microscopy, supported by micromagnetic simulations, show that the structure of the vortex state can be adjusted by varying the aspect ratio of the nanowires. The data we present here introduce a route toward the concept of 3-dimensional vortex-based magnetic memories.

  14. Process Development of Gallium Nitride Phosphide Core-Shell Nanowire Array Solar Cell

    Chuang, Chen

    Dilute Nitride GaNP is a promising materials for opto-electronic applications due to its band gap tunability. The efficiency of GaNxP1-x /GaNyP1-y core-shell nanowire solar cell (NWSC) is expected to reach as high as 44% by 1% N and 9% N in the core and shell, respectively. By developing such high efficiency NWSCs on silicon substrate, a further reduction of the cost of solar photovoltaic can be further reduced to 61$/MWh, which is competitive to levelized cost of electricity (LCOE) of fossil fuels. Therefore, a suitable NWSC structure and fabrication process need to be developed to achieve this promising NWSC. This thesis is devoted to the study on the development of fabrication process of GaNxP 1-x/GaNyP1-y core-shell Nanowire solar cell. The thesis is divided into two major parts. In the first parts, previously grown GaP/GaNyP1-y core-shell nanowire samples are used to develop the fabrication process of Gallium Nitride Phosphide nanowire solar cell. The design for nanowire arrays, passivation layer, polymeric filler spacer, transparent col- lecting layer and metal contact are discussed and fabricated. The property of these NWSCs are also characterized to point out the future development of Gal- lium Nitride Phosphide NWSC. In the second part, a nano-hole template made by nanosphere lithography is studied for selective area growth of nanowires to improve the structure of core-shell NWSC. The fabrication process of nano-hole templates and the results are presented. To have a consistent features of nano-hole tem- plate, the Taguchi Method is used to optimize the fabrication process of nano-hole templates.

  15. Ion-beam-directed self-organization of conducting nanowire arrays

    Batzill, M.; Bardou, F.; Snowdon, K. J.

    2001-01-01

    Glancing-incidence ion-beam irradiation has been used both to ease kinetic constraints which otherwise restrict the establishment of long-range order and to impose external control on the orientation of nanowire arrays formed during stress-field-induced self-ordering of calcium atoms on a CaF 2 (111) surface. The arrays exhibit exceptional long-range order, with the long axis of the wires oriented along the azimuthal direction of ion-beam incidence. Transport measurements reveal a highly anisotropic electrical conductivity, whose maximum lies in the direction of the long axis of the 10.1-nm-period calcium wires

  16. New Insights into the Origins of Sb-Induced Effects on Self-Catalyzed GaAsSb Nanowire Arrays.

    Ren, Dingding; Dheeraj, Dasa L; Jin, Chengjun; Nilsen, Julie S; Huh, Junghwan; Reinertsen, Johannes F; Munshi, A Mazid; Gustafsson, Anders; van Helvoort, Antonius T J; Weman, Helge; Fimland, Bjørn-Ove

    2016-02-10

    Ternary semiconductor nanowire arrays enable scalable fabrication of nano-optoelectronic devices with tunable bandgap. However, the lack of insight into the effects of the incorporation of Vy element results in lack of control on the growth of ternary III-V(1-y)Vy nanowires and hinders the development of high-performance nanowire devices based on such ternaries. Here, we report on the origins of Sb-induced effects affecting the morphology and crystal structure of self-catalyzed GaAsSb nanowire arrays. The nanowire growth by molecular beam epitaxy is changed both kinetically and thermodynamically by the introduction of Sb. An anomalous decrease of the axial growth rate with increased Sb2 flux is found to be due to both the indirect kinetic influence via the Ga adatom diffusion induced catalyst geometry evolution and the direct composition modulation. From the fundamental growth analyses and the crystal phase evolution mechanism proposed in this Letter, the phase transition/stability in catalyst-assisted ternary III-V-V nanowire growth can be well explained. Wavelength tunability with good homogeneity of the optical emission from the self-catalyzed GaAsSb nanowire arrays with high crystal phase purity is demonstrated by only adjusting the Sb2 flux.

  17. High density micro-pyramids with silicon nanowire array for photovoltaic applications

    Rahman, Tasmiat; Navarro-Cía, Miguel; Fobelets, Kristel

    2014-01-01

    We use a metal assisted chemical etch process to fabricate silicon nanowire arrays (SiNWAs) onto a dense periodic array of pyramids that are formed using an alkaline etch masked with an oxide layer. The hybrid micro-nano structure acts as an anti-reflective coating with experimental reflectivity below 1% over the visible and near-infrared spectral regions. This represents an improvement of up to 11 and 14 times compared to the pyramid array and SiNWAs on bulk, respectively. In addition to the experimental work, we optically simulate the hybrid structure using a commercial finite difference time domain package. The results of the optical simulations support our experimental work, illustrating a reduced reflectivity in the hybrid structure. The nanowire array increases the absorbed carrier density within the pyramid by providing a guided transition of the refractive index along the light path from air into the silicon. Furthermore, electrical simulations which take into account surface and Auger recombination show an efficiency increase for the hybrid structure of 56% over bulk, 11% over pyramid array and 8.5% over SiNWAs. (paper)

  18. Micromagnetic simulation and the angular dependence of coercivity and remanence for array of polycrystalline nickel nanowires

    Fuentes, G.P.; Holanda, J. [Departamento de Física, Universidade Federal de Pernambuco, Recife, PE 50670-901 (Brazil); Guerra, Y.; Silva, D.B.O.; Farias, B.V.M. [Pós-Graduação em Ciência de Materiais, Universidade Federal de Pernambuco, Recife, PE 50670-901 (Brazil); Padrón-Hernández, E., E-mail: padron@df.ufpe.br [Departamento de Física, Universidade Federal de Pernambuco, Recife, PE 50670-901 (Brazil); Pós-Graduação em Ciência de Materiais, Universidade Federal de Pernambuco, Recife, PE 50670-901 (Brazil)

    2017-02-01

    We present here our experimental results for the preparation and characterization of nanowires of nickel and the analysis of the angular dependence of coercivity and remanence using experimental data and micromagnetic simulation. The fabrication was made by using aluminum oxide membranes as templates and deposited nickel by an electrochemical route. The magnetic measurements showed that coercivity and remanence are dependent of the angle of application of the external magnetic field. Our results are different than that expected for the coherent, vortex and transversal modes of the reversion for the magnetic moments. According to the transmission electron microscopy analysis we can see that our nanowires have not a perfect cylindrical format. That is why we have used the ellipsoids chain model for better understanding the real structure of wires and its relation with the magnetic behavior. In order to generate theoretical results for this configuration we have made micromagnetic simulation using Nmag code. Our numerical results for the realistic distances are in correspondence with the magnetic measurements and we can see that there are contradictions if we assume the transverse reversal mode. Then, we can conclude that structure of nanowires should be taken into account to understand the discrepancies reported in the literature for the reversion mechanism in arrays of nickel nanowires. - Highlights: • We present answers for the problem of angular dependence for the coercivity and remanence. • Experimental and theoretical results confirmed the great importance of the real structure. • Micromagnetic calculations confirmed the importance of the real structure.

  19. Misfit-guided self-organization of anti-correlated Ge quantum dot arrays on Si nanowires

    Kwon, Soonshin; Chen, Zack C.Y.; Kim, Ji-Hun; Xiang, Jie

    2012-01-01

    Misfit-strain guided growth of periodic quantum dot (QD) arrays in planar thin film epitaxy has been a popular nanostructure fabrication method. Engineering misfit-guided QD growth on a nanoscale substrate such as the small curvature surface of a nanowire represents a new approach to self-organized nanostructure preparation. Perhaps more profoundly, the periodic stress underlying each QD and the resulting modulation of electro-optical properties inside the nanowire backbone promise to provide a new platform for novel mechano-electronic, thermoelectronic, and optoelectronic devices. Herein, we report a first experimental demonstration of self-organized and self-limited growth of coherent, periodic Ge QDs on a one dimensional Si nanowire substrate. Systematic characterizations reveal several distinctively different modes of Ge QD ordering on the Si nanowire substrate depending on the core diameter. In particular, Ge QD arrays on Si nanowires of around 20 nm diameter predominantly exhibit an anti-correlated pattern whose wavelength agrees with theoretical predictions. The correlated pattern can be attributed to propagation and correlation of misfit strain across the diameter of the thin nanowire substrate. The QD array growth is self-limited as the wavelength of the QDs remains unchanged even after prolonged Ge deposition. Furthermore, we demonstrate a direct kinetic transformation from a uniform Ge shell layer to discrete QD arrays by a post-growth annealing process. PMID:22889063

  20. Texture orientation of glancing angle deposited copper nanowire arrays

    Alouach, H.; Mankey, G.J.

    2004-01-01

    Self-assembled copper nanowires were deposited on native oxide Si(100) substrates using glancing angle deposition with and without substrate rotation. Wire morphology, texture and crystallographic orientation are strongly dependent on the deposition parameters. A method for determining the preferred crystal orientation is described. This orientation is found to be different from what is expected from the geometric orientation of the wires. For wires deposited without substrate rotation, the face-centered-cubic (fcc)(111) crystal orientation, which corresponds to the close-packed, low surface energy (111) plane of copper, lies between the long axis of the wire and that normal to the substrate. X-ray diffraction data show that the wires exhibit bundling behavior perpendicular to the plane of incidence. For samples deposited with azimuthal rotation of the substrate, the fcc(111) directions in the wires are evenly distributed in a cone around the long axis of the wires, which point normal to the substrate. When the substrate is rotated during deposition at an angle of 75 deg., the wires exhibit a strong fcc(220) texture. These observations show that wires deposited with substrate rotation are highly textured and have random orientations in the plane of the substrate

  1. Nickel Nanowire@Porous NiCo2O4 Nanorods Arrays Grown on Nickel Foam as Efficient Pseudocapacitor Electrode

    Houzhao Wan

    2017-12-01

    Full Text Available A three dimensional hierarchical nanostructure composed of nickel nanowires and porous NiCo2O4 nanorods arrays on the surface of nickel foam is successfully fabricated by a facile route. In this structure, the nickel nanowires are used as core materials to support high-pseudocapacitance NiCo2O4 nanorods and construct the well-defined NiCo2O4 nanorods shell/nickel nanowires core hierarchical structure on nickel foam. Benefiting from the participation of nickel nanowires, the nickel nanowire@NiCo2O4/Ni foam electrode shows a high areal specific capacitance (7.4 F cm−2 at 5 mA cm−2, excellent rate capability (88.04% retained at 100 mA cm−2, and good cycling stability (74.08% retained after 1,500 cycles. The superior electrochemical properties made it promising as electrode for supercapacitors.

  2. The Development of High-Density Vertical Silicon Nanowires and Their Application in a Heterojunction Diode

    Wen-Chung Chang

    2016-06-01

    Full Text Available Vertically aligned p-type silicon nanowire (SiNW arrays were fabricated through metal-assisted chemical etching (MACE of Si wafers. An indium tin oxide/indium zinc oxide/silicon nanowire (ITO/IZO/SiNW heterojunction diode was formed by depositing ITO and IZO thin films on the vertically aligned SiNW arrays. The structural and electrical properties of the resulting ITO/IZO/SiNW heterojunction diode were characterized by field emission scanning electron microscopy (FE-SEM, X-ray diffraction (XRD, and current−voltage (I−V measurements. Nonlinear and rectifying I−V properties confirmed that a heterojunction diode was successfully formed in the ITO/IZO/SiNW structure. The diode had a well-defined rectifying behavior, with a rectification ratio of 550.7 at 3 V and a turn-on voltage of 2.53 V under dark conditions.

  3. Patterned growth of carbon nanotubes over vertically aligned silicon nanowire bundles for achieving uniform field emission.

    Hung, Yung-Jr; Huang, Yung-Jui; Chang, Hsuan-Chen; Lee, Kuei-Yi; Lee, San-Liang

    2014-01-01

    A fabrication strategy is proposed to enable precise coverage of as-grown carbon nanotube (CNT) mats atop vertically aligned silicon nanowire (VA-SiNW) bundles in order to realize a uniform bundle array of CNT-SiNW heterojunctions over a large sample area. No obvious electrical degradation of as-fabricated SiNWs is observed according to the measured current-voltage characteristic of a two-terminal single-nanowire device. Bundle arrangement of CNT-SiNW heterojunctions is optimized to relax the electrostatic screening effect and to maximize the field enhancement factor. As a result, superior field emission performance and relatively stable emission current over 12 h is obtained. A bright and uniform fluorescent radiation is observed from CNT-SiNW-based field emitters regardless of its bundle periodicity, verifying the existence of high-density and efficient field emitters on the proposed CNT-SiNW bundle arrays.

  4. Heterogeneous metal-oxide nanowire micro-sensor array for gas sensing

    DeMeo, Dante; E Vandervelde, Thomas; MacNaughton, Sam; Sonkusale, Sameer; Wang, Zhilong; Zhang, Xinjie

    2014-01-01

    Vanadium oxide, manganese oxide, tungsten oxide, and nickel oxide nanowires were investigated for their applicability as chemiresistive gas sensors. Nanowires have excellent surface-to-volume ratios which yield higher sensitivities than bulk materials. Sensing elements consisting of these materials were assembled in an array to create an electronic nose platform. Dielectrophoresis was used to position the nanomaterials onto a microfabricated array of electrodes, which was subsequently mounted onto a leadless chip carrier and printed circuit board for rapid testing. Samples were tested in an enclosed chamber with vapors of acetone, isopropanol, methanol, and aqueous ammonia. The change in resistance of each assembly was measured. Responses varied between nanowire compositions, each demonstrating unique and repeatable responses to different gases; this enabled direct detection of the gases from the ensemble response. Sensitivities were calculated based on the fractional resistance change in a saturated environment and ranged from 6 × 10 −4 to 2 × 10 −5 %change ppm −1 . (papers)

  5. Horizontal Assembly of Single Nanowire Diode Fabricated by p-n Junction GaN NW Grown by MOCVD

    Ji-Hyeon Park

    2014-01-01

    Full Text Available Uniaxially p-n junction gallium nitride nanowires have been synthesized via metal-organic chemical vapor deposition method. Nanowires prepared on Si(111 substrates were found to grow perpendicular to the substrate, and the transmission electron microscopy studies demonstrated that the nanowires had singlecrystalline structures with a growth axis. The parallel assembly of the p-n junction nanowire was prepared on a Si substrate with a thermally grown SiO2 layer. The transport studies of horizontal gallium nitride nanowire structures assembled from p- and n-type materials show that these junctions correspond to well-defined p-n junction diodes. The p-n junction devices based on GaN nanowires suspended over the electrodes were fabricated and their electrical properties were investigated. The horizontally assembled gallium nitride nanowire diodes suspended over the electrodes exhibited a substantial increase in conductance under UV light exposure. Apart from the selectivity to different light wavelengths, high responsivity and extremely short response time have also been obtained.

  6. Copper Antimonide Nanowire Array Lithium Ion Anodes Stabilized by Electrolyte Additives.

    Jackson, Everett D; Prieto, Amy L

    2016-11-09

    Nanowires of electrochemically active electrode materials for lithium ion batteries represent a unique system that allows for intensive investigations of surface phenomena. In particular, highly ordered nanowire arrays produced by electrodeposition into anodic aluminum oxide templates can lead to new insights into a material's electrochemical performance by providing a high-surface-area electrode with negligible volume expansion induced pulverization. Here we show that for the Li-Cu x Sb ternary system, stabilizing the surface chemistry is the most critical factor for promoting long electrode life. The resulting solid electrolyte interphase is analyzed using a mix of electron microscopy, X-ray photoelectron spectroscopy, and lithium ion battery half-cell testing to provide a better understanding of the importance of electrolyte composition on this multicomponent alloy anode material.

  7. Polyaniline nanowire arrays aligned on nitrogen-doped carbon fabric for high-performance flexible supercapacitors.

    Yu, Pingping; Li, Yingzhi; Yu, Xinyi; Zhao, Xin; Wu, Lihao; Zhang, Qinghua

    2013-09-24

    A combination of vertical polyaniline (PANI) nanowire arrays and nitrogen plasma etched carbon fiber cloths (eCFC) was fabricated to create 3D nanostructured PANI/eCFC composites. The small size of the highly ordered PANI nanowires can greatly reduce the scale of the diffusion length, allowing for the improved utilization of electrode materials. A two-electrode flexible supercapacitor based on PANI/eCFC demonstrates a high specific capacitance (1035 F g(-1) at a current density of 1 A g(-1)), good rate capability (88% capacity retention at 8 A g(-1)), and long-term cycle life (10% capacity loss after 5000 cycles). The lightweight, low-cost, flexible composites are promising candidates for use in energy storage device applications.

  8. A Robust Highly Aligned DNA Nanowire Array-Enabled Lithography for Graphene Nanoribbon Transistors.

    Kang, Seok Hee; Hwang, Wan Sik; Lin, Zhiqun; Kwon, Se Hun; Hong, Suck Won

    2015-12-09

    Because of its excellent charge carrier mobility at the Dirac point, graphene possesses exceptional properties for high-performance devices. Of particular interest is the potential use of graphene nanoribbons or graphene nanomesh for field-effect transistors. Herein, highly aligned DNA nanowire arrays were crafted by flow-assisted self-assembly of a drop of DNA aqueous solution on a flat polymer substrate. Subsequently, they were exploited as "ink" and transfer-printed on chemical vapor deposited (CVD)-grown graphene substrate. The oriented DNA nanowires served as the lithographic resist for selective removal of graphene, forming highly aligned graphene nanoribbons. Intriguingly, these graphene nanoribbons can be readily produced over a large area (i.e., millimeter scale) with a high degree of feature-size controllability and a low level of defects, rendering the fabrication of flexible two terminal devices and field-effect transistors.

  9. Monolithic electrically injected nanowire array edge-emitting laser on (001) silicon

    Frost, Thomas; Jahangir, Shafat; Stark, Ethan; Deshpande, Saniya; Hazari, Arnab Shashi; Zhao, Chao; Ooi, Boon S.; Bhattacharya, Pallab K.

    2014-01-01

    A silicon-based laser, preferably electrically pumped, has long been a scientific and engineering goal. We demonstrate here, for the first time, an edge-emitting InGaN/GaN disk-in-nanowire array electrically pumped laser emitting in the green (λ = 533 nm) on (001) silicon substrate. The devices display excellent dc and dynamic characteristics with values of threshold current density, differential gain, T0 and small signal modulation bandwidth equal to 1.76 kA/cm2, 3 × 10-17 cm2, 232 K, and 5.8 GHz respectively under continuous wave operation. Preliminary reliability measurements indicate a lifetime of 7000 h. The emission wavelength can be tuned by varying the alloy composition in the quantum disks. The monolithic nanowire laser on (001)Si can therefore address wide-ranging applications such as solid state lighting, displays, plastic fiber communication, medical diagnostics, and silicon photonics. © 2014 American Chemical Society.

  10. Monolithic electrically injected nanowire array edge-emitting laser on (001) silicon

    Frost, Thomas

    2014-08-13

    A silicon-based laser, preferably electrically pumped, has long been a scientific and engineering goal. We demonstrate here, for the first time, an edge-emitting InGaN/GaN disk-in-nanowire array electrically pumped laser emitting in the green (λ = 533 nm) on (001) silicon substrate. The devices display excellent dc and dynamic characteristics with values of threshold current density, differential gain, T0 and small signal modulation bandwidth equal to 1.76 kA/cm2, 3 × 10-17 cm2, 232 K, and 5.8 GHz respectively under continuous wave operation. Preliminary reliability measurements indicate a lifetime of 7000 h. The emission wavelength can be tuned by varying the alloy composition in the quantum disks. The monolithic nanowire laser on (001)Si can therefore address wide-ranging applications such as solid state lighting, displays, plastic fiber communication, medical diagnostics, and silicon photonics. © 2014 American Chemical Society.

  11. Vertically p-n-junctioned GaN nano-wire array diode fabricated on Si(111) using MOCVD.

    Park, Ji-Hyeon; Kim, Min-Hee; Kissinger, Suthan; Lee, Cheul-Ro

    2013-04-07

    We demonstrate the fabrication of n-GaN:Si/p-GaN:Mg nanowire arrays on (111) silicon substrate by metal organic chemical vapor deposition (MOCVD) method .The nanowires were grown by a newly developed two-step growth process. The diameter of as-grown nanowires ranges from 300-400 nm with a density of 6-7 × 10(7) cm(-2). The p- and n-type doping of the nanowires is achieved with Mg and Si dopant species. Structural characterization by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) indicates that the nanowires are relatively defect-free. The room-temperature photoluminescence emission with a strong peak at 370 nm indicates that the n-GaN:Si/p-GaN:Mg nanowire arrays have potential application in light-emitting nanodevices. The cathodoluminscence (CL) spectrum clearly shows a distinct optical transition of GaN nanodiodes. The nano-n-GaN:Si/p-GaN:Mg diodes were further completed using a sputter coating approach to deposit Au/Ni metal contacts. The polysilazane filler has been etched by a wet chemical etching process. The n-GaN:Si/p-GaN:Mg nanowire diode was fabricated for different Mg source flow rates. The current-voltage (I-V) measurements reveal excellent rectifying properties with an obvious turn-on voltage at 1.6 V for a Mg flow rate of 5 sccm (standard cubic centimeters per minute).

  12. Effective mass approximation versus full atomistic model to calculate the output characteristics of a gate-all-around germanium nanowire field effect transistor (GAA-GeNW-FET)

    Bayani, Amir Hossein; Voves, Jan; Dideban, Daryoosh

    2018-01-01

    Here, we compare the output characteristics of a gate-all-around germanium nanowire field effect transistor (GAA-GeNW-FET) with 2.36 nm2 square cross-section area using tight-binding (TB) sp3d5s∗ model (full atomistic model (FAM)) and effective mass approximation (EMA). Synopsys/QuantumWise Atomistix ToolKit (ATK) and Silvaco Atlas3D are used to consider the TB model and EMA, respectively. Results show that EMA predicted only one quantum state (QS) for quantum transport, whereas FAM predicted three QSs. A cosine function behavior is obtained by both methods for the first quantum state. The calculated bandgap value by EMA is almost twice smaller than that of the FAM. Also, a fluctuating current is predicted by both methods but in different oscillation values.

  13. Polyaniline nanowire array encapsulated in titania nanotubes as a superior electrode for supercapacitors

    Xie, Keyu; Li, Jie; Lai, Yanqing; Zhang, Zhi'an; Liu, Yexiang; Zhang, Guoge; Huang, Haitao

    2011-05-01

    Conducting polymer with 1D nanostructure exhibits excellent electrochemical performances but a poor cyclability that limits its use in supercapacitors. In this work, a novel composite electrode made of polyaniline nanowire-titania nanotube array was synthesized via a simple and inexpensive electrochemical route by electropolymerizing aniline onto an anodized titania nanotube array. The specific capacitance was as high as 732 F g-1 at 1 A g-1, which remained at 543 F g-1 when the current density was increased by 20 times. 74% of the maximum energy density (36.6 Wh kg-1) was maintained even at a high power density of 6000 W kg-1. An excellent long cycle life of the electrode was observed with a retention of ~86% of the initial specific capacitance after 2000 cycles. The good electrochemical performance was attributed to the unique microstructure of the electrode with disordered PANI nanowire arrays encapsulated inside the TiO2 nanotubes, providing high surface area, fast diffusion path for ions and long-term cycle stability. Such a nanocomposite electrode is attractive for supercapacitor applications.

  14. Hierarchical Mesoporous Zinc-Nickel-Cobalt Ternary Oxide Nanowire Arrays on Nickel Foam as High-Performance Electrodes for Supercapacitors.

    Wu, Chun; Cai, Junjie; Zhang, Qiaobao; Zhou, Xiang; Zhu, Ying; Shen, Pei Kang; Zhang, Kaili

    2015-12-09

    Nickel foam supported hierarchical mesoporous Zn-Ni-Co ternary oxide (ZNCO) nanowire arrays are synthesized by a simple two-step approach including a hydrothermal method and subsequent calcination process and directly utilized for supercapacitive investigation for the first time. The nickel foam supported hierarchical mesoporous ZNCO nanowire arrays possess an ultrahigh specific capacitance value of 2481.8 F g(-1) at 1 A g(-1) and excellent rate capability of about 91.9% capacitance retention at 5 A g(-1). More importantly, an asymmetric supercapacitor with a high energy density (35.6 Wh kg(-1)) and remarkable cycle stability performance (94% capacitance retention over 3000 cycles) is assembled successfully by employing the ZNCO electrode as positive electrode and activated carbon as negative electrode. The remarkable electrochemical behaviors demonstrate that the nickel foam supported hierarchical mesoporous ZNCO nanowire array electrodes are highly desirable for application as advanced supercapacitor electrodes.

  15. Site-specific nucleation and controlled growth of a vertical tellurium nanowire array for high performance field emitters

    Safdar, Muhammad; Zhan Xueying; Mirza, Misbah; Wang Zhenxing; Sun Lianfeng; He Jun; Niu Mutong; Zhang Jinping; Zhao Qing

    2013-01-01

    We report the controlled growth of highly ordered and well aligned one-dimensional tellurium nanostructure arrays via a one-step catalyst-free physical vapor deposition method. The density, size and fine structures of tellurium nanowires are systematically studied and optimized. Field emission measurement was performed to display notable dependence on nanostructure morphologies. The ordered nanowire array based field emitter has a turn-on field as low as 3.27 V μm −1 and a higher field enhancement factor of 3270. Our finding offers the possibility of controlling the growth of tellurium nanowire arrays and opens up new means for their potential applications in electronic devices and displays. (paper)

  16. Coaxial CoMoO4 nanowire arrays with chemically integrated conductive coating for high-performance flexible all-solid-state asymmetric supercapacitors

    Chen, Yaping; Liu, Borui; Liu, Qi; Wang, Jun; Li, Zhanshuang; Jing, Xiaoyan; Liu, Lianhe

    2015-09-01

    Flexible all-solid-state supercapacitors have offered promising applications as novel energy storage devices based on their merits, such as small size, low cost, light weight and high wearability for high-performance portable electronics. However, one major challenge to make flexible all-solid-state supercapacitors depends on the improvement of electrode materials with higher electrical conductivity properties and longer cycling stability. In this article, we put forward a simple strategy to in situ synthesize 1D CoMoO4 nanowires (NWs), using highly conductive CC and an electrically conductive PPy wrapping layer on CoMoO4 NW arrays for high performance electrode materials. The results show that the CoMoO4/PPy hybrid NW electrode exhibits a high areal specific capacitance of ca. 1.34 F cm-2 at a current density of 2 mA cm-2, which is remarkably better than the corresponding values for a pure CoMoO4 NW electrode of 0.7 F cm-2. An excellent cycling performance of nanocomposites of up to 95.2% (ca. 1.12 F cm-2) is achieved after 2000 cycles compared to pristine CoMoO4 NWs. In addition, we fabricate flexible all-solid-state ASC which can be cycled reversibly in the voltage range of 0-1.7 V, and exhibits a maximum energy density of 104.7 W h kg-1 (3.522 mW h cm-3), demonstrating great potential for practical applications in flexible energy storage electronics.Flexible all-solid-state supercapacitors have offered promising applications as novel energy storage devices based on their merits, such as small size, low cost, light weight and high wearability for high-performance portable electronics. However, one major challenge to make flexible all-solid-state supercapacitors depends on the improvement of electrode materials with higher electrical conductivity properties and longer cycling stability. In this article, we put forward a simple strategy to in situ synthesize 1D CoMoO4 nanowires (NWs), using highly conductive CC and an electrically conductive PPy wrapping layer on

  17. Tungsten oxide@polypyrrole core-shell nanowire arrays as novel negative electrodes for asymmetric supercapacitors.

    Wang, Fengmei; Zhan, Xueying; Cheng, Zhongzhou; Wang, Zhenxing; Wang, Qisheng; Xu, Kai; Safdar, Muhammad; He, Jun

    2015-02-11

    Among active pseudocapacitive materials, polypyrrole (PPy) is a promising electrode material in electrochemical capacitors. PPy-based materials research has thus far focused on its electrochemical performance as a positive electrode rather than as a negative electrode for asymmetric supercapacitors (ASCs). Here high-performance electrochemical supercapacitors are designed with tungsten oxide@PPy (WO3 @PPy) core-shell nanowire arrays and Co(OH)2 nanowires grown on carbon fibers. The WO3 @PPy core-shell nanowire electrode exhibits a high capacitance (253 mF/cm2) in negative potentials (-1.0-0.0 V). The ASCs packaged with CF-Co(OH)2 as a positive electrode and CF-WO3 @PPy as a negative electrode display a high volumetric capacitance up to 2.865 F/cm3 based on volume of the device, an energy density of 1.02 mWh/cm3 , and very good stability performance. These findings promote the application of PPy-based nanostructures as advanced negative electrodes for ASCs. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Magnetic behavior of NiCu nanowire arrays: Compositional, geometry and temperature dependence

    Palmero, E. M.; Bran, C.; Real, R. P. del; Vázquez, M.; Magén, C.

    2014-01-01

    Arrays of Ni 100−x Cu x nanowires ranging in composition 0 ≤ x ≤ 75, diameter from 35 to 80 nm, and length from 150 nm to 28 μm have been fabricated by electrochemical co-deposition of Ni and Cu into self-ordered anodic aluminum oxide membranes. As determined by X-ray diffraction and Transmission Electron Microscopy, the crystalline structure shows fcc cubic symmetry with [111] preferred texture and preferential Ni or Cu lattice depending on the composition. Their magnetic properties such as coercivity and squareness have been determined as a function of composition and geometry in a Vibrating Sample Magnetometer in the temperature range from 10 to 290 K for applied magnetic fields parallel and perpendicular to the nanowires axis. Addition of Cu into the NiCu alloy up to 50% enhances both parallel coercivity and squareness. For the higher Cu content, these properties decrease and the magnetization easy axis becomes oriented perpendicular to the wires. In addition, coercivity and squareness increase by decreasing the diameter of nanowires which is ascribed to the increase of shape anisotropy. The temperature dependent measurements reflect a complex behavior of the magnetic anisotropy as a result of energy contributions with different evolution with temperature.

  19. Frequency-multiplexed bias and readout of a 16-pixel superconducting nanowire single-photon detector array

    Doerner, S.; Kuzmin, A.; Wuensch, S.; Charaev, I.; Boes, F.; Zwick, T.; Siegel, M.

    2017-07-01

    We demonstrate a 16-pixel array of microwave-current driven superconducting nanowire single-photon detectors with an integrated and scalable frequency-division multiplexing architecture, which reduces the required number of bias and readout lines to a single microwave feed line. The electrical behavior of the photon-sensitive nanowires, embedded in a resonant circuit, as well as the optical performance and timing jitter of the single detectors is discussed. Besides the single pixel measurements, we also demonstrate the operation of a 16-pixel array with a temporal, spatial, and photon-number resolution.

  20. High-performance asymmetric supercapacitors based on core/shell cobalt oxide/carbon nanowire arrays with enhanced electrochemical energy storage

    Pan, G.X.; Xia, X.H.; Cao, F.; Chen, J.; Tang, P.S.; Zhang, Y.J.; Chen, H.F.

    2014-01-01

    Graphical abstract: - Highlights: • We prepared a self-supported porous Co 3 O 4 /C core/shell nanowire array. • Core/shell nanowire array showed high pseudo-capacitive properties. • Core/shell array structure was favorable for fast ion and electron transfer. - Abstract: High-reactivity electrode materials are indispensible for developing high-performance electrochemical energy storage devices. Herein, we report self-supported core/shell Co 3 O 4 /C nanowire arrays by using hydrothermal synthesis and chemical vapor deposition methods. A uniform and thin carbon shell is coated on the surface of Co 3 O 4 nanowire forming core/shell nanowires with diameters of ∼100 nm. Asymmetric supercapacitors have been assembled with the core/shell Co 3 O 4 /C nanowire arrays as the positive electrode and activated carbon (AC) as the negative electrode. The core/shell Co 3 O 4 /C nanowire arrays exhibit a specific capacity of 116 mAh g −1 at the working current of 100 mA (4 A g −1 ), and a long cycle life along with ∼ 92% retention after 8000 cycles at 4 A g −1 , higher than the unmodified Co 3 O 4 nanowire arrays (81 mAh g −1 at 4 A g −1 ). The introduction of uniform carbon layer into the core/shell structure is favorable for the enhancement of supercapacitor due to the improved electrical conductivity and reaction kinetics

  1. Fabrication and optical properties of TiO sub 2 nanowire arrays made by sol-gel electrophoresis deposition into anodic alumina membranes

    Lin, Y; Yuan, X Y; Xie, T; Zhang, L D

    2003-01-01

    Ordered TiO sub 2 nanowire arrays have been successfully fabricated into the nanochannels of a porous anodic alumina membrane by sol-gel electrophoretic deposition. After annealing at 500 deg. C, the TiO sub 2 nanowire arrays and the individual nanowires were characterized using scanning electron microscopy (SEM), transmission electron microscopy (TEM), selected area electron diffraction (SAED) and x-ray diffraction (XRD). SEM and TEM images show that these nanowires are dense and continuous with a uniform diameter throughout their entire length. XRD and SAED analysis together indicate that these TiO sub 2 nanowires crystallize in the anatase polycrystalline structure. The optical absorption band edge of TiO sub 2 nanowire arrays exhibits a blue shift with respect of that of the bulk TiO sub 2 owing to the quantum size effect.

  2. Fabrication of Si/ZnS radial nanowire heterojunction arrays for white light emitting devices on Si substrates.

    Katiyar, Ajit K; Sinha, Arun Kumar; Manna, Santanu; Ray, Samit K

    2014-09-10

    Well-separated Si/ZnS radial nanowire heterojunction-based light-emitting devices have been fabricated on large-area substrates by depositing n-ZnS film on p-type nanoporous Si nanowire templates. Vertically oriented porous Si nanowires on p-Si substrates have been grown by metal-assisted chemical etching catalyzed using Au nanoparticles. Isolated Si nanowires with needle-shaped arrays have been made by KOH treatment before ZnS deposition. Electrically driven efficient white light emission from radial heterojunction arrays has been achieved under a low forward bias condition. The observed white light emission is attributed to blue and green emission from the defect-related radiative transition of ZnS and Si/ZnS interface, respectively, while the red arises from the porous surface of the Si nanowire core. The observed white light emission from the Si/ZnS nanowire heterojunction could open up the new possibility to integrate Si-based optical sources on a large scale.

  3. Optoelectrical modeling of solar cells based on c-Si/a-Si:H nanowire array: focus on the electrical transport in between the nanowires

    Levtchenko, Alexandra; Le Gall, Sylvain; Lachaume, Raphaël; Michallon, Jérôme; Collin, Stéphane; Alvarez, José; Djebbour, Zakaria; Kleider, Jean-Paul

    2018-06-01

    By coupling optical and electrical modeling, we have investigated the photovoltaic performances of p-i-n radial nanowires array based on crystalline p-type silicon (c-Si) core/hydrogenated amorphous silicon (a-Si:H) shell. By varying either the doping concentration of the c-Si core, or back contact work function we can separate and highlight the contribution to the cell’s performance of the nanowires themselves (the radial cell) from the interspace between the nanowires (the planar cell). We show that the build-in potential (V bi) in the radial and planar cells strongly depends on the doping of c-Si core and the work function of the back contact respectively. Consequently, the solar cell’s performance is degraded if either the doping concentration of the c-Si core, or/and the work function of the back contact is too low. By inserting a thin (p) a-Si:H layer between both core/absorber and back contact/absorber, the performance of the solar cell can be improved by partly fixing the V bi at both interfaces due to strong electrostatic screening effect. Depositing such a buffer layer playing the role of an electrostatic screen for charge carriers is a suggested way of enhancing the performance of solar cells based on radial p-i-n or n-i-p nanowire array.

  4. Hierarchical Nanocomposites of Polyaniline Nanowire Arrays on Reduced Graphene Oxide Sheets for Supercapacitors

    Wang, Li; Ye, Yinjian; Lu, Xingping; Wen, Zhubiao; Li, Zhuang; Hou, Haoqing; Song, Yonghai

    2013-12-01

    Here we reported a novel route to synthesize a hierarchical nanocomposite (PANI-frGO) of polyaniline (PANI) nanowire arrays covalently bonded on reduced graphene oxide (rGO). In this strategy, nitrophenyl groups were initially grafted on rGO via C-C bond, and then reduced to aminophenyl to act as anchor sites for the growth of PANI arrays on rGO. The functionalized process was confirmed by atomic force microscopy, scanning electron microscopy, Fourier transform infrared spectroscopy, Raman spectroscopy and thermogravimetric analysis. The electrochemical properties of the PANI-frGO as supercapacitor materials were investigated. The PANI-frGO nanocomposites showed high capacitance of 590 F g-1 at 0.1 A g-1, and had no loss of capacitance after 200 cycles at 2 A g-1. The improved electrochemical performance suggests promising application of the PANI-frGO nanocomposites in high-performance supercapacitors.

  5. An effective surface-enhanced Raman scattering template based on a Ag nanocluster-ZnO nanowire array

    Deng, S; Zhang, X; Loh, K P; Fan, H M; Sow, C H; Cheng, C-L; Foo, Y L

    2009-01-01

    An effective surface-enhanced Raman scattering (SERS) template based on a 3D hybrid Ag nanocluster (NC)-decorated ZnO nanowire array was fabricated through a simple process of depositing Ag NCs on ZnO nanowire arrays. The effects of particle size and excitation energy on the Raman scattering in these hybrid systems have been investigated using rhodamine 6G as a standard analyte. The results indicate that the hybrid nanosystem with 150 nm Ag NCs produces a larger SERS enhancement factor of 3.2 x 10 8 , which is much higher than that of 10 nm Ag NCs (6.0 x 10 6 ) under 532 nm excitation energy. The hybrid nanowire arrays were further applied to obtain SERS spectra of the two-photon absorption (TPA) chromophore T7. Finite-difference time-domain simulations reveal the presence of an enhanced field associated with inter-wire plasmon coupling of the 150 nm Ag NCs on adjacent ZnO nanowires; such a field was absent in the case of the 10 nm Ag NC-coated ZnO nanowire. Such hybrid nanosystems could be used as SERS substrates more effectively than assembled Ag NC film due to the enhanced light-scattering local field and the inter-wire plasmon-enhanced electromagnetic field.

  6. Multiplexed detection of cardiac biomarkers in serum with nanowire arrays using readout ASIC.

    Zhang, Guo-Jun; Chai, Kevin Tshun Chuan; Luo, Henry Zhan Hong; Huang, Joon Min; Tay, Ignatius Guang Kai; Lim, Andy Eu-Jin; Je, Minkyu

    2012-05-15

    Early detection of cardiac biomarkers for diagnosis of heart attack is the key to saving lives. Conventional method of detection like the enzyme-linked immunosorbent assay (ELISA) is time consuming and low in sensitivity. Here, we present a label-free detection system consisting of an array of silicon nanowire sensors and an interface readout application specific integrated circuit (ASIC). This system provides a rapid solution that is highly sensitive and is able to perform direct simultaneous-multiplexed detection of cardiac biomarkers in serum. Nanowire sensor arrays were demonstrated to have the required selectivity and sensitivity to perform multiplexed detection of 100 fg/ml troponin T, creatine kinase MM, and creatine kinase MB in serum. A good correlation between measurements from a probe station and the readout ASIC was obtained. Our detection system is expected to address the existing limitations in cardiac health management that are currently imposed by the conventional testing platform, and opens up possibilities in the development of a miniaturized device for point-of-care diagnostic applications. Copyright © 2012 Elsevier B.V. All rights reserved.

  7. Flexible ultraviolet photodetectors based on ZnO-SnO2 heterojunction nanowire arrays

    Lou, Zheng; Yang, Xiaoli; Chen, Haoran; Liang, Zhongzhu

    2018-02-01

    A ZnO-SnO2 nanowires (NWs) array, as a metal oxide semiconductor, was successfully synthesized by a near-field electrospinning method for the applications as high performance ultraviolet photodetectors. Ultraviolet photodetectors based on a single nanowire exhibited excellent photoresponse properties to 300 nm ultraviolet light illumination including ultrahigh I on/I off ratios (up to 103), good stability and reproducibility because of the separation between photo-generated electron-hole pairs. Moreover, the NWs array shows an enhanced photosensing performance. Flexible photodetectors on the PI substrates with similar tendency properties were also fabricated. In addition, under various bending curvatures and cycles, the as-fabricated flexible photodetectors revealed mechanical flexibility and good stable electrical properties, showing that they have the potential for applications in future flexible photoelectron devices. Project supported by the National Science Foundation of China (No. 61504136) and the State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine and Physics, Chinese Academy of Sciences.

  8. Collective spin waves on a nanowire array with step-modulated thickness

    Gubbiotti, G; Tacchi, S; Kostylev, M; Ivanov, E; Samarin, S; Madami, M; Carlotti, G; Ding, J; Adeyeye, A O; Zighem, F; Stashkevich, A A

    2014-01-01

    It is shown experimentally that collective Bloch spin waves are able to propagate in a dense periodic array of nanowires with step-modulated thickness along the periodicity direction. The spin wave dispersion (frequency versus wave vector k) was measured using the Brillouin light scattering technique by sweeping the wave vector perpendicularly to the wire length. Remarkably, the mode measured at the lowest frequency exhibits an oscillating dispersion and its frequency is up-shifted with respect to the homogeneous-thickness wires of the same width. The modes located at higher frequencies have negligible dependencies on the wave number, i.e. are practically dispersionless. Complementary ferromagnetic resonance measurements enabled us to independently measure the whole set of modes at k = 0, showing a good agreement with the Brillouin light scattering data. These results have been successfully reproduced in a numerical simulation employing a two-dimensional Green's function description of the dynamic dipole field of the precessing magnetization. The theory also allowed visualizing the non-trivial distribution of dynamic magnetization across the wire cross-section and estimating the Brillouin light scattering cross-section. The analysis of these intensities suggests complicated magneto-optical coupling between the light and the dynamic magnetization in the arrays of nanowires with step-modulated thickness. This work can stimulate the design, tailoring, and characterization of three-dimensional magnonic crystals. (paper)

  9. Hierarchically Structured Co3O4@Pt@MnO2 Nanowire Arrays for High-Performance Supercapacitors

    Xia, Hui; Zhu, Dongdong; Luo, Zhentao; Yu, Yue; Shi, Xiaoqin; Yuan, Guoliang; Xie, Jianping

    2013-10-01

    Here we proposed a novel architectural design of a ternary MnO2-based electrode - a hierarchical Co3O4@Pt@MnO2 core-shell-shell structure, where the complemental features of the three key components (a well-defined Co3O4 nanowire array on the conductive Ti substrate, an ultrathin layer of small Pt nanoparticles, and a thin layer of MnO2 nanoflakes) are strategically combined into a single entity to synergize and construct a high-performance electrode for supercapacitors. Owing to the high conductivity of the well-defined Co3O4 nanowire arrays, in which the conductivity was further enhanced by a thin metal (Pt) coating layer, in combination with the large surface area provided by the small MnO2 nanoflakes, the as-fabricated Co3O4@Pt@MnO2 nanowire arrays have exhibited high specific capacitances, good rate capability, and excellent cycling stability. The architectural design demonstrated in this study provides a new approach to fabricate high-performance MnO2-based nanowire arrays for constructing next-generation supercapacitors.

  10. Heterogeneous NiCo2O4@polypyrrole core/sheath nanowire arrays on Ni foam for high performance supercapacitors

    Hu, Jing; Li, Minchan; Lv, Fucong; Yang, Mingyang; Tao, Pengpeng; Tang, Yougen; Liu, Hongtao; Lu, Zhouguang

    2015-10-01

    A novel heterogeneous NiCo2O4@PPy core/sheath nanowire arrays are directly grown on Ni foam involving three facile steps, hydrothermal synthesis and calcination of NiCo2O4 nanowire arrays and subsequent in-situ oxidative polymerization of polypyrrole (PPy). When investigated as binder- and conductive additive-free electrodes for supercapacitors (SCs) in 6 M KOH, the NiCo2O4@PPy core/sheath nanowire arrays exhibit high areal capacitance of 3.49 F cm-2 at a discharge current density of 5 mA cm-2, which is almost 1.5 times as much as the pristine NiCo2O4 (2.30 F cm-2). More importantly, it can remain 3.31 F cm-2 (94.8% retention) after 5000 cycles. The as-obtained electrode also displays excellent rate capability, whose areal capacitance can still remain 2.79 F cm-2 while the discharge current density is increased to 50 mA cm-2. The remarkable electrochemical performance is mainly attributed to the unique heterogeneous core/sheath nanowire-array architectures.

  11. Modulation of surface wettability of superhydrophobic substrates using Si nanowire arrays and capillary-force-induced nanocohesion

    Dawood, M.K.; Zheng, H.; Kurniawan, N.A.; Leong, K.C.; Foo, Y.L.; Rajagopalan, Raj; Khan, S.A.; Choi, W.K.

    2012-01-01

    We describe a new scalable method to fabricate large-area hybrid superhydrophobic surfaces with selective adhesion properties on silicon (Si) nanowire array substrates by exploiting liquid-medium-dependent capillary-force-induced nanocohesion. Gold (Au) nanoparticles were deposited on Si by glancing

  12. Nanofabrication of Arrays of Silicon Field Emitters with Vertical Silicon Nanowire Current Limiters and Self-Aligned Gates

    2016-08-19

    limiters, MEMS, NEMS, field emission, cold cathodes (Some figures may appear in colour only in the online journal) 1. Introduction Dense arrays of silicon... attention has been given to densely packed, highly ordered, top-down fabricated, single crystal vertical silicon nanowire devices that are embedded

  13. Digital selective growth of a ZnO nanowire array by large scale laser decomposition of zinc acetate.

    Hong, Sukjoon; Yeo, Junyeob; Manorotkul, Wanit; Kang, Hyun Wook; Lee, Jinhwan; Han, Seungyong; Rho, Yoonsoo; Suh, Young Duk; Sung, Hyung Jin; Ko, Seung Hwan

    2013-05-07

    We develop a digital direct writing method for ZnO NW micro-patterned growth on a large scale by selective laser decomposition of zinc acetate. For ZnO NW growth, by replacing the bulk heating with the scanning focused laser as a fully digital local heat source, zinc acetate crystallites can be selectively activated as a ZnO seed pattern to grow ZnO nanowires locally on a larger area. Together with the selective laser sintering process of metal nanoparticles, more than 10,000 UV sensors have been demonstrated on a 4 cm × 4 cm glass substrate to develop all-solution processible, all-laser mask-less digital fabrication of electronic devices including active layer and metal electrodes without any conventional vacuum deposition, photolithographic process, premade mask, high temperature and vacuum environment.

  14. Facile Conversion Synthesis of Densely-Formed Branched ZnO-Nanowire Arrays for Quantum-Dot-Sensitized Solar Cells

    Lee, Woojin; Kang, Suji; Hwang, Taehyun; Kim, Kunsu; Woo, Hyungsub; Lee, Byungho; Kim, Jaewon; Kim, Jinhyun; Park, Byungwoo

    2015-01-01

    Highlights: •3-D hierarchically branched ZnO nanowires by a facile synthesis with seed nucleation. •Nanobranching enhances the efficiency by a factor of two compared with the bare QDSC. •Attributed to the increased sensitizer by ∼80% and decreased transmittance by ∼17%. •Optimized nanostructures correlate with the light-harvesting and carrier-collection efficiencies. -- Abstract: An effective way of synthesizing densely-formed branched ZnO-nanowire arrays was developed by a straightforward conversion reaction of ZnS into ZnO. Hierarchically structured ZnO nanowires are utilized for quantum-dot-sensitized solar cells (QDSCs), having resulted in the conversion-efficiency enhancement by a factor of two compared to the bare ZnO nanowires. This is attributed to the increased CdS-quantum-dot sensitizer by ∼80% and decreased diffused transmittance by ∼17%, induced by the densely-formed branched nanowires. The correlations between the branched nanostructures and photovoltaic performances are systematically investigated in terms of light absorption, charge-transfer resistance, and carrier lifetime. This facile and controllable branched nanowire synthesis is anticipated to be applicable to other semiconductor photoanodes for efficient light harvesting and charge collecting properties

  15. Fabrication of flexible silver nanowire conductive films and transmittance improvement based on moth-eye nanostructure array

    Zhang, Chengpeng; Zhu, Yuwen; Yi, Peiyun; Peng, Linfa; Lai, Xinmin

    2017-07-01

    Transparent conductive electrodes (TCEs) are widely used in optoelectronic devices, such as touch screens, liquid-crystal displays and light-emitting diodes. To date, the material of the most commonly used TCEs was indium-tin oxide (ITO), which had several intrinsic drawbacks that limited its applications in the long term, including relatively high material cost and brittleness. Silver nanowire (AgNW), as one of the alternative materials for ITO TCEs, has already gained much attention all over the world. In this paper, we reported a facile method to greatly enhance the transmittance of the AgNW TCEs without reducing the electrical conductivity based on moth-eye nanostructures, and the moth-eye nanostructures were fabricated by using a roll-to-roll ultraviolet nanoimprint lithography process. Besides, the effects of mechanical pressure and bending on the moth-eye nanostructure layer were also investigated. In the research, the optical transmittance of the flexible AgNW TCEs was enhanced from 81.3% to 86.0% by attaching moth-eye nanostructures onto the other side of the flexible polyethylene terephthalate substrate while the electrical conductivity of the AgNW TCEs was not sacrificed. This research can provide a direction for the cost-effective fabrication of moth-eye nanostructures and the transmittance improvement of the flexible transparent electrodes.

  16. Fabrication of flexible silver nanowire conductive films and transmittance improvement based on moth-eye nanostructure array

    Zhang, Chengpeng; Zhu, Yuwen; Yi, Peiyun; Peng, Linfa; Lai, Xinmin

    2017-01-01

    Transparent conductive electrodes (TCEs) are widely used in optoelectronic devices, such as touch screens, liquid-crystal displays and light-emitting diodes. To date, the material of the most commonly used TCEs was indium-tin oxide (ITO), which had several intrinsic drawbacks that limited its applications in the long term, including relatively high material cost and brittleness. Silver nanowire (AgNW), as one of the alternative materials for ITO TCEs, has already gained much attention all over the world. In this paper, we reported a facile method to greatly enhance the transmittance of the AgNW TCEs without reducing the electrical conductivity based on moth-eye nanostructures, and the moth-eye nanostructures were fabricated by using a roll-to-roll ultraviolet nanoimprint lithography process. Besides, the effects of mechanical pressure and bending on the moth-eye nanostructure layer were also investigated. In the research, the optical transmittance of the flexible AgNW TCEs was enhanced from 81.3% to 86.0% by attaching moth-eye nanostructures onto the other side of the flexible polyethylene terephthalate substrate while the electrical conductivity of the AgNW TCEs was not sacrificed. This research can provide a direction for the cost-effective fabrication of moth-eye nanostructures and the transmittance improvement of the flexible transparent electrodes. (paper)

  17. Electrodeposition of CdSe coatings on ZnO nanowire arrays for extremely thin absorber solar cells

    Majidi, Hasti [Department of Chemical and Biological Engineering, Drexel University, 3141 Chestnut St, Philadelphia, PA 19104 (United States); Baxter, Jason B., E-mail: jbaxter@drexel.ed [Department of Chemical and Biological Engineering, Drexel University, 3141 Chestnut St, Philadelphia, PA 19104 (United States)

    2011-02-15

    We report on electrodeposition of CdSe coatings onto ZnO nanowire arrays and determine the effect of processing conditions on material properties such as morphology and microstructure. CdSe-coated ZnO nanowire arrays have potential use in extremely thin absorber (ETA) solar cells, where CdSe absorbs visible light and injects photoexcited electrons into the ZnO nanowires. We show that room-temperature electrodeposition enables growth of CdSe coatings that are highly crystalline, uniform, and conformal with precise control over thickness and microstructure. X-ray diffraction and transmission electron microscopy show nanocrystalline CdSe in both hexagonal and cubic phases with grain size {approx}5 nm. Coating morphology depends on electrodeposition current density. Uniform and conformal coatings were achieved using moderate current densities of {approx}2 mA cm{sup -2} for nanowires with roughness factor of {approx}10, while lower current densities resulted in sparse nucleation and growth of larger, isolated islands. Electrodeposition charge density controls the thickness of the CdSe coating, which was exploited to investigate the evolution of the morphology at early stages of nucleation and growth. UV-vis transmission spectroscopy and photoelectrochemical solar cell measurements demonstrate that CdSe effectively sensitizes ZnO nanowires to visible light.

  18. Electrodeposition of CdSe coatings on ZnO nanowire arrays for extremely thin absorber solar cells

    Majidi, Hasti; Baxter, Jason B.

    2011-01-01

    We report on electrodeposition of CdSe coatings onto ZnO nanowire arrays and determine the effect of processing conditions on material properties such as morphology and microstructure. CdSe-coated ZnO nanowire arrays have potential use in extremely thin absorber (ETA) solar cells, where CdSe absorbs visible light and injects photoexcited electrons into the ZnO nanowires. We show that room-temperature electrodeposition enables growth of CdSe coatings that are highly crystalline, uniform, and conformal with precise control over thickness and microstructure. X-ray diffraction and transmission electron microscopy show nanocrystalline CdSe in both hexagonal and cubic phases with grain size ∼5 nm. Coating morphology depends on electrodeposition current density. Uniform and conformal coatings were achieved using moderate current densities of ∼2 mA cm -2 for nanowires with roughness factor of ∼10, while lower current densities resulted in sparse nucleation and growth of larger, isolated islands. Electrodeposition charge density controls the thickness of the CdSe coating, which was exploited to investigate the evolution of the morphology at early stages of nucleation and growth. UV-vis transmission spectroscopy and photoelectrochemical solar cell measurements demonstrate that CdSe effectively sensitizes ZnO nanowires to visible light.

  19. Hybrid heterojunction solar cell based on organic-inorganic silicon nanowire array architecture.

    Shen, Xiaojuan; Sun, Baoquan; Liu, Dong; Lee, Shuit-Tong

    2011-12-07

    Silicon nanowire arrays (SiNWs) on a planar silicon wafer can be fabricated by a simple metal-assisted wet chemical etching method. They can offer an excellent light harvesting capability through light scattering and trapping. In this work, we demonstrated that the organic-inorganic solar cell based on hybrid composites of conjugated molecules and SiNWs on a planar substrate yielded an excellent power conversion efficiency (PCE) of 9.70%. The high efficiency was ascribed to two aspects: one was the improvement of the light absorption by SiNWs structure on the planar components; the other was the enhancement of charge extraction efficiency, resulting from the novel top contact by forming a thin organic layer shell around the individual silicon nanowire. On the contrary, the sole planar junction solar cell only exhibited a PCE of 6.01%, due to the lower light trapping capability and the less hole extraction efficiency. It indicated that both the SiNWs structure and the thin organic layer top contact were critical to achieve a high performance organic/silicon solar cell. © 2011 American Chemical Society

  20. Vertically aligned ZnO nanowire arrays in Rose Bengal-based dye-sensitized solar cells

    Pradhan, Basudev; Batabyal, Sudip K.; Pal, Amlan J. [Indian Association for the Cultivation of Science, Department of Solid State Physics, Kolkata 700032 (India)

    2007-05-23

    We fabricate dye-sensitized solar cells (DSSC) using vertically oriented, high density, and crystalline array of ZnO nanowires, which can be a suitable alternative to titanium dioxide nanoparticle films. The vertical nanowires provide fast routes or channels for electron transport to the substrate electrode. As an alternative to conventional ruthenium complex, we introduce Rose Bengal dye, which acts as a photosensitizer in the dye-sensitized solar cells. The dye energetically matches the ZnO with usual KI-I{sub 2} redox couple for dye-sensitized solar cell applications. (author)

  1. A 64-channel readout ASIC for nanowire biosensor array with electrical calibration scheme.

    Chai, Kevin T C; Choe, Kunil; Bernal, Olivier D; Gopalakrishnan, Pradeep K; Zhang, Guo-Jun; Kang, Tae Goo; Je, Minkyu

    2010-01-01

    A 1.8-mW, 18.5-mm(2) 64-channel current readout ASIC was implemented in 0.18-µm CMOS together with a new calibration scheme for silicon nanowire biosensor arrays. The ASIC consists of 64 channels of dedicated readout and conditioning circuits which incorporate correlated double sampling scheme to reduce the effect of 1/f noise and offset from the analog front-end. The ASIC provides a 10-bit digital output with a sampling rate of 300 S/s whilst achieving a minimum resolution of 7 pA(rms). A new electrical calibration method was introduced to mitigate the issue of large variations in the nano-scale sensor device parameters and optimize the sensor sensitivity. The experimental results show that the proposed calibration technique improved the sensitivity by 2 to 10 times and reduced the variation between dataset by 9 times.

  2. Temperature-dependent photoluminescence analysis of ZnO nanowire array annealed in air

    Sun, Yanan; Gu, Xiuquan; Zhao, Yulong; Wang, Linmeng; Qiang, Yinghuai

    2018-05-01

    ZnO nanowire arrays (NWAs) were prepared on transparent conducting fluorine doped tin oxide (FTO) substrates through a facile hydrothermal method, followed by a 500 °C annealing to improve their crystalline qualities and photoelectrochemical (PEC) activities. It was found that the annealing didn't change the morphology, but resulted in a significant reduction of the donor concentration. Temperature-dependent photoluminescence (PL) was carried out for a comprehensive analysis of the effect from annealing. Noteworthy, four dominant peaks were identified from the 10 K spectrum of a 500 °C annealed sample, and they were assigned to FX, D0X, (e, D0) and (e, D0) -1LO, respectively. Of them, the FX emission was only existed below 130 K, while the room-temperature (RT) PL spectrum was dominated by the D0X emission.

  3. Construction of MoS2/Si nanowire array heterojunction for ultrahigh-sensitivity gas sensor

    Wu, Di; Lou, Zhenhua; Wang, Yuange; Xu, Tingting; Shi, Zhifeng; Xu, Junmin; Tian, Yongtao; Li, Xinjian

    2017-10-01

    Few-layer MoS2 thin films were synthesized by a two-step thermal decomposition process. In addition, MoS2/Si nanowire array (SiNWA) heterojunctions exhibiting excellent gas sensing properties were constructed and investigated. Further analysis reveals that such MoS2/SiNWA heterojunction devices are highly sensitive to nitric oxide (NO) gas under reverse voltages at room temperature (RT). The gas sensor demonstrated a minimum detection limit of 10 ppb, which represents the lowest value obtained for MoS2-based sensors, as well as an ultrahigh response of 3518% (50 ppm NO, ˜50% RH), with good repeatability and selectivity of the MoS2/SiNWA heterojunction. The sensing mechanisms were also discussed. The performance of the MoS2/SiNWA heterojunction gas sensors is superior to previous results, revealing that they have great potential in applications relating to highly sensitive gas sensors.

  4. Ultrafine MnO2 Nanowire Arrays Grown on Carbon Fibers for High-Performance Supercapacitors

    Hu, Jiyu; Qian, Feng; Song, Guosheng; Li, Wenyao; Wang, Linlin

    2016-10-01

    Large-area ultrafine MnO2 nanowire arrays (NWA) directly grew on a carbon fiber (CF, used as a substrate) by a simple electrochemical method, forming three-dimensional (3D) hierarchical heterostructures of a CF@MnO2 NWA composite. As an electrode for supercapacitors, the CF@MnO2 NWA composite exhibits excellent electrochemical performances including high specific capacitance (321.3 F g-1 at 1000 mA g-1) and good rate capability. Further, the overall capacitance retention is 99.7 % capacitance after 3000 cycles. These outstanding electrochemical performances attribute to a large number of transport channels for the penetration of electrolyte and the transportation of ions and electrons of electrodes. The as-prepared CF@MnO2 NWA composite may be a promising electrode material for high-performance supercapacitors.

  5. 16 channel 200 GHz arrayed waveguide grating based on Si nanowire waveguides

    Zhao Lei; An Junming; Zhang Jiashun; Song Shijiao; Wu Yuanda; Hu Xiongwei

    2011-01-01

    A 16 channel arrayed waveguide grating demultiplexer with 200 GHz channel spacing based on Si nanowire waveguides is designed. The transmission spectra response simulated by transmission function method shows that the device has channel spacing of 1.6 nm and crosstalk of 31 dB. The device is fabricated by 193 nm deep UV lithography in silicon-on-substrate. The demultiplexing characteristics are observed with crosstalk of 5-8 dB, central channel's insertion loss of 2.2 dB, free spectral range of 24.7 nm and average channel spacing of 1.475 nm. The cause of the spectral distortion is analyzed specifically. (semiconductor devices)

  6. Ultrafine MnO2 Nanowire Arrays Grown on Carbon Fibers for High-Performance Supercapacitors

    Jiyu Hu

    2016-10-01

    Full Text Available Abstract Large-area ultrafine MnO2 nanowire arrays (NWA directly grew on a carbon fiber (CF, used as a substrate by a simple electrochemical method, forming three-dimensional (3D hierarchical heterostructures of a CF@MnO2 NWA composite. As an electrode for supercapacitors, the CF@MnO2 NWA composite exhibits excellent electrochemical performances including high specific capacitance (321.3 F g−1 at 1000 mA g−1 and good rate capability. Further, the overall capacitance retention is ~99.7 % capacitance after 3000 cycles. These outstanding electrochemical performances attribute to a large number of transport channels for the penetration of electrolyte and the transportation of ions and electrons of electrodes. The as-prepared CF@MnO2 NWA composite may be a promising electrode material for high-performance supercapacitors.

  7. Real-time imaging systems for superconducting nanowire single-photon detector arrays

    Hofherr, Matthias

    2014-07-01

    Superconducting nanowire singe-photon detectors (SNSPD) are promising detectors in the field of applications, where single-photon resolution is required like in quantum optics, spectroscopy or astronomy. These cryogenic detectors gain from a broad spectrum in the optical and infrared range and deliver low dark counts and low jitter. This work provides a piece of deeper physical understanding of detector functionality in combination with highly engineered readout development. A detailed analysis focuses on the intrinsic detection mechanism of SNSPDs related to the detection in the infrared regime and the evolution of dark counts. With this fundamental knowledge, the next step is the development of a multi-pixel readout at cryogenic conditions. It is demonstrated, how two auspicious multi-pixel readout concepts can be realized, which enables statistical framing like in imaging applications using RSFQ electronics with fast framing rates and the readout of a detector array with continuous real-time single-photon resolution.

  8. Fabrication and characterization of well-aligned zinc oxide nanowire arrays and their realizations in Schottky-device applications

    Wong, Kin Mun; Grote, Fabian; Sun, Hui; Lei, Yong [Institute of Materials Physics, Center for Nanotechnology, University of Muenster (Germany); Wen, Liaoyong; Fang, Yaoguo [Institute of Nanochemistry and Nanobiology, Shanghai University, Shanghai 201800 (China)

    2011-07-01

    Highly ordered arrays of vertical zinc oxide (ZnO) nanowires (NWs) or nanopores were fabricated in our group by first thermal evaporating a thin film of gold on the ultrathin alumina membrane (UTAM). The UTAM was then utilized as a substrate for the growth of the ordered arrays using a chemical vapour deposition (CVD) process. Alternatively, a modified CVD process was also used to fabricate ultra-long ZnO NWs with the length of the nanowire exceeding 100 micrometres. Subsequently, densely packed arrays of ZnO NWs Schottky diodes were synthesized by transferring the long NWs on a substrate using a dry contact printing method and the electrical contacts were made on the NWs with a photolithographic process. The interesting electrical properties of the ZnO NWs, diodes or other metal oxide NWs such as the field emission, electron transport and piezoelectric properties were characterized by current-voltage or by other appropriate measurements.

  9. In situ fabrication of Ni-Co (oxy)hydroxide nanowire-supported nanoflake arrays and their application in supercapacitors.

    Zheng, Xiaoyu; Quan, Honglin; Li, Xiaoxin; He, Hai; Ye, Qinglan; Xu, Xuetang; Wang, Fan

    2016-09-29

    Three-dimensional (3D) hybrid nanostructured arrays grown on a flexible substrate have recently attracted great attention owing to their potential application as supercapacitor electrodes in portable and wearable electronic devices. Here, we report an in situ conversion of Ni-Co active electrode materials for the fabrication of high-performance electrodes. Ni-Co carbonate hydroxide nanowire arrays on carbon cloth were initially synthesized via a hydrothermal method, and they were gradually converted to Ni-Co (oxy)hydroxide nanowire-supported nanoflake arrays after soaking in an alkaline solution. The evolution of the supercapacitor performance of the soaked electrode was investigated in detail. The areal capacitance increases from 281 mF cm -2 at 1 mA cm -2 to 3710 and 3900 mF cm -2 after soaking for 36 h and 48 h, respectively. More interestingly, the electrode also shows an increased capacitance with charge/discharge cycles due to the long-time soaking in KOH solution, suggesting novel cycling durability. The enhancement in capacitive performance should be related to the formation of a unique nanowire-supported nanoflake array architecture, which controls the agglomeration of nanoflakes, making them fully activated. As a result, the facile in situ fabrication of the hybrid architectural design in this study provides a new approach to fabricate high-performance Ni/Co based hydroxide nanostructure arrays for next-generation energy storage devices.

  10. Design of coated standing nanowire array solar cell performing beyond the planar efficiency limits

    Zeng, Yang; Ye, Qinghao; Shen, Wenzhong, E-mail: wzshen@sjtu.edu.cn [Institute of Solar Energy, and Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China)

    2016-05-28

    The single standing nanowire (SNW) solar cells have been proven to perform beyond the planar efficiency limits in both open-circuit voltage and internal quantum efficiency due to the built-in concentration and the shifting of the absorption front. However, the expandability of these nano-scale units to a macro-scale photovoltaic device remains unsolved. The main difficulty lies in the simultaneous preservation of an effective built-in concentration in each unit cell and a broadband high absorption capability of their array. Here, we have provided a detailed theoretical guideline for realizing a macro-scale solar cell that performs furthest beyond the planar limits. The key lies in a complementary design between the light-trapping of the single SNWs and that of the photonic crystal slab formed by the array. By tuning the hybrid HE modes of the SNWs through the thickness of a coaxial dielectric coating, the optimized coated SNW array can sustain an absorption rate over 97.5% for a period as large as 425 nm, which, together with the inherited carrier extraction advantage, leads to a cell efficiency increment of 30% over the planar limit. This work has demonstrated the viability of a large-size solar cell that performs beyond the planar limits.

  11. SnO2Nanowire Arrays and Electrical Properties Synthesized by Fast Heating a Mixture of SnO2and CNTs Waste Soot

    Zhou Zhi-Hua

    2009-01-01

    Full Text Available Abstract SnO2nanowire arrays were synthesized by fast heating a mixture of SnO2and the carbon nanotubes waste soot by high-frequency induction heating. The resultant SnO2nanowires possess diameters from 50 to 100 nm and lengths up to tens of mircrometers. The field-effect transistors based on single SnO2nanowire exhibit that as-synthesized nanowires have better transistor performance in terms of transconductance and on/off ratio. This work demonstrates a simple technique to the growth of nanomaterials for application in future nanoelectronic devices.

  12. Fabrication of three-dimensional MIS nano-capacitor based on nano-imprinted single crystal silicon nanowire arrays

    Zhai, Yujia; Palard, Marylene; Mathew, Leo; Hussain, Muhammad Mustafa; Willson, Grant Grant; Tutuc, Emanuel; Banerjee, Sanjay Kumar

    2012-01-01

    We report fabrication of single crystalline silicon nanowire based-three-dimensional MIS nano-capacitors for potential analog and mixed signal applications. The array of nanowires is patterned by Step and Flash Imprint Lithography (S-FIL). Deep silicon etching (DSE) is used to form the nanowires with high aspect ratio, increase the electrode area and thus significantly enhance the capacitance. High-! dielectric is deposited by highly conformal atomic layer deposition (ALD) Al2O3 over the Si nanowires, and sputtered metal TaN serves as the electrode. Electrical measurements of fabricated capacitors show the expected increase of capacitance with greater nanowire height and decreasing dielectric thickness, consistent with calculations. Leakage current and time-dependent dielectric breakdown (TDDB) are also measured and compared with planar MIS capacitors. In view of greater interest in 3D transistor architectures, such as FinFETs, 3D high density MIS capacitors offer an attractive device technology for analog and mixed signal applications. - See more at: http://www.eurekaselect.com/105099/article#sthash.EzeJxk6j.dpuf

  13. Fabrication of three-dimensional MIS nano-capacitor based on nano-imprinted single crystal silicon nanowire arrays

    Zhai, Yujia

    2012-11-26

    We report fabrication of single crystalline silicon nanowire based-three-dimensional MIS nano-capacitors for potential analog and mixed signal applications. The array of nanowires is patterned by Step and Flash Imprint Lithography (S-FIL). Deep silicon etching (DSE) is used to form the nanowires with high aspect ratio, increase the electrode area and thus significantly enhance the capacitance. High-! dielectric is deposited by highly conformal atomic layer deposition (ALD) Al2O3 over the Si nanowires, and sputtered metal TaN serves as the electrode. Electrical measurements of fabricated capacitors show the expected increase of capacitance with greater nanowire height and decreasing dielectric thickness, consistent with calculations. Leakage current and time-dependent dielectric breakdown (TDDB) are also measured and compared with planar MIS capacitors. In view of greater interest in 3D transistor architectures, such as FinFETs, 3D high density MIS capacitors offer an attractive device technology for analog and mixed signal applications. - See more at: http://www.eurekaselect.com/105099/article#sthash.EzeJxk6j.dpuf

  14. Fabrication and characterization of ZnO nanowires array electrodes with high photocurrent densities: Effects of the seed layer calcination time

    Lu, Yi-Jing; Liu, Ching-Fang; Hu, Chi-Chang, E-mail: cchu@che.nthu.edu.tw; Kuo, Jen-Hou; Boddula, Rajender

    2017-03-01

    In this work, we demonstrate that vertically grown ZnO nanowire (NW) arrays of the wurzite phase were successfully fabricated on fluorine doped tin oxide (FTO) substrates via a hydrothermal method. The coating of a seed layer onto the FTO substrates was found to favor the growth of a uniform ZnO NWs array which shows saturation in the photocurrent density with a relatively low potential bias. Furthermore, prolonging the calcination time of the seed layer makes the ZnO NWs behave the better charge separation and improve the photo-electrochemical performance. Under the irradiation at a 75 mW cm{sup −2} from a simulated sunlight source, the ZnO NWs array electrode prepared from the seed layer with calcination at 350 °C for 5 h shows a saturated photocurrent density of 514 μA cm{sup −2} and a maximum half-cell solar-to-hydrogen (HC-STH) efficiency of 0.26% was obtained at 0.6 V versus reversible hydrogen electrode (RHE) in neutral electrolyte. - Highlights: • The seed layer annealing time strongly influences the textural and photo-activity of ZnO NWs. • The average diameter and density of ZnO NWs were controlled to 47–70 nm and 46–70 NWs μm{sup −2}, respectively. • ZnO NWs show promising application potential in solar-electrocatalytic water splitting under potential bias. • The ZnO NWs with SL annealing time = 5 h achieve the highest HC-STH efficiency of 0.26% at 0.6 V.

  15. Three-dimensional mesoscale heterostructures of ZnO nanowire arrays epitaxially grown on CuGaO2 nanoplates as individual diodes.

    Forticaux, Audrey; Hacialioglu, Salih; DeGrave, John P; Dziedzic, Rafal; Jin, Song

    2013-09-24

    We report a three-dimensional (3D) mesoscale heterostructure composed of one-dimensional (1D) nanowire (NW) arrays epitaxially grown on two-dimensional (2D) nanoplates. Specifically, three facile syntheses are developed to assemble vertical ZnO NWs on CuGaO2 (CGO) nanoplates in mild aqueous solution conditions. The key to the successful 3D mesoscale integration is the preferential nucleation and heteroepitaxial growth of ZnO NWs on the CGO nanoplates. Using transmission electron microscopy, heteroepitaxy was found between the basal planes of CGO nanoplates and ZnO NWs, which are their respective (001) crystallographic planes, by the observation of a hexagonal Moiré fringes pattern resulting from the slight mismatch between the c planes of ZnO and CGO. Careful analysis shows that this pattern can be described by a hexagonal supercell with a lattice parameter of almost exactly 11 and 12 times the a lattice constants for ZnO and CGO, respectively. The electrical properties of the individual CGO-ZnO mesoscale heterostructures were measured using a current-sensing atomic force microscopy setup to confirm the rectifying p-n diode behavior expected from the band alignment of p-type CGO and n-type ZnO wide band gap semiconductors. These 3D mesoscale heterostructures represent a new motif in nanoassembly for the integration of nanomaterials into functional devices with potential applications in electronics, photonics, and energy.

  16. Three-Dimensional Porous Iron Vanadate Nanowire Arrays as a High-Performance Lithium-Ion Battery.

    Cao, Yunhe; Fang, Dong; Liu, Ruina; Jiang, Ming; Zhang, Hang; Li, Guangzhong; Luo, Zhiping; Liu, Xiaoqing; Xu, Jie; Xu, Weilin; Xiong, Chuanxi

    2015-12-23

    Development of three-dimensional nanoarchitectures on current collectors has emerged as an effective strategy for enhancing rate capability and cycling stability of the electrodes. Herein, a new type of three-dimensional porous iron vanadate (Fe0.12V2O5) nanowire arrays on a Ti foil has been synthesized by a hydrothermal method. The as-prepared Fe0.12V2O5 nanowires are about 30 nm in diameter and several micrometers in length. The effect of reaction time on the resulting morphology is investigated and the mechanism for the nanowire formation is proposed. As an electrode material used in lithium-ion batteries, the unique configuration of the Fe0.12V2O5 nanowire arrays presents enhanced capacitance, satisfying rate capability and good cycling stability, as evaluated by cyclic voltammetry and galvanostatic discharge-charge cycling. It delivers a high discharge capacity of 293 mAh·g(-1) at 2.0-3.6 V or 382.2 mAh·g(-1) at 1.0-4.0 V after 50 cycles at 30 mA·g(-1).

  17. Construction of carbon nanoflakes shell on CuO nanowires core as enhanced core/shell arrays anode of lithium ion batteries

    Cao, F.; Xia, X.H.; Pan, G.X.; Chen, J.; Zhang, Y.J.

    2015-01-01

    Highlights: • CuO/C core/shell nanowire arrays are prepared by electro-deposition + ALD method. • Carbon shell is favorable for structural stability. • CuO/C core/shell arrays show enhanced cycle stability and high capacity. - Abstract: Tailored metal oxide/carbon composite structures have attracted great attention due to potential synergistic effects and enhanced properties. In this work, novel CuO/C core/shell nanowire arrays are prepared by the combination of electro-deposition of CuO and atomic-layer-deposition-assisted formation of carbon nanoflakes shell. The CuO nanowires with diameters of ∼200 nm are homogenously coated by carbon nanoflakes shell. When evaluated as anode materials for lithium ion batteries (LIBs), compared to the unmodified CuO nanowire arrays, the CuO/C core/shell nanowire arrays exhibit improved electrochemical performances with higher capacity, better electrochemical reactivity and high-rate capability as well as superior cycling life (610 mAh g"−"1 at 0.5C after 290 cycles). The enhanced electrochemical performance is mainly attributed to the introduction of carbon flake shell in the core/shell nanowire arrays structure, which provides higher active material-electrolyte contact area, improved electrical conductivity, and better accommodation of volume change. The proposed method provides a new way for fabrication of high-performance metal oxides anodes of LIBs.

  18. Electrochemical properties of high-power supercapacitors using ordered NiO coated Si nanowire array electrodes

    Lu, Fang; Qiu, Mengchun; Qi, Xiang; Yang, Liwen; Yin, Jinjie; Hao, Guolin; Feng, Xiang; Li, Jun; Zhong, Jianxin

    2011-08-01

    Highly ordered NiO coated Si nanowire arrays are fabricated as electrode materials for electrochemical supercapacitors (ES) via depositing Ni on electroless-etched Si nanowires and subsequently annealing. The electrochemical tests reveal that the constructed electrode has superior electrical conductibility and more active sites per unit area for chemical reaction processes, thereby possessing good cycle stability, high specific capacity, and low internal resistance. The specific capacity is up to 787.5 F g-1 at a discharge current of 2.5 mA and decreases slightly with 4.039% loss after 500 cycles, while the equivalent internal resistance is ˜3.067 Ω. Owing to its favorable electrochemical performance, this ordered hybrid array nanostructure is a promising electrode material in future commercial ES.

  19. Integration of a highly ordered gold nanowires array with glucose oxidase for ultra-sensitive glucose detection

    Cui, Jiewu [NanoScience and Sensor Technology Research Group, School of Applied Sciences and Engineering, Monash University, Gippsland Campus, Churchill 3842, VIC Australia (Australia); Laboratory of Functional Nanomaterials and Devices, School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009, Anhui (China); Adeloju, Samuel B., E-mail: sam.adeloju@monash.edu [NanoScience and Sensor Technology Research Group, School of Applied Sciences and Engineering, Monash University, Gippsland Campus, Churchill 3842, VIC Australia (Australia); Wu, Yucheng, E-mail: ycwu@hfut.edu.cn [Laboratory of Functional Nanomaterials and Devices, School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009, Anhui (China)

    2014-01-27

    Graphical abstract: -- Highlights: •Successfully synthesised highly-ordered gold nanowires array with an AAO template. •Fabricated an ultra-sensitive glucose nanobiosensor with the gold nanowires array. •Achieved sensitivity as high as 379.0 μA cm{sup −2} mM{sup −1} and detection limit as low as 50 nM. •Achieved excellent anti-interference with aid of Nafion membrane towards UA and AA. •Enabled successful detection and quantification of glucose in human blood serum. -- Abstract: A highly sensitive amperometric nanobiosensor has been developed by integration of glucose oxidase (GO{sub x}) with a gold nanowires array (AuNWA) by cross-linking with a mixture of glutaraldehyde (GLA) and bovine serum albumin (BSA). An initial investigation of the morphology of the synthesized AuNWA by field emission scanning electron microscopy (FESEM) and field emission transmission electron microscopy (FETEM) revealed that the nanowires array was highly ordered with rough surface, and the electrochemical features of the AuNWA with/without modification were also investigated. The integrated AuNWA–BSA–GLA–GO{sub x} nanobiosensor with Nafion membrane gave a very high sensitivity of 298.2 μA cm{sup −2} mM{sup −1} for amperometric detection of glucose, while also achieving a low detection limit of 0.1 μM, and a wide linear range of 5–6000 μM. Furthermore, the nanobiosensor exhibited excellent anti-interference ability towards uric acid (UA) and ascorbic acid (AA) with the aid of Nafion membrane, and the results obtained for the analysis of human blood serum indicated that the device is capable of glucose detection in real samples.

  20. Coccolithophore export production and seasonal variation from a trans-Atlantic array of sediment trap moorings (NW Africa to Caribbean)

    Guerreiro, C. V.; Baumann, K. H.; Brummer, G. J. A.; Fischer, G.; Korte, L.; Stuut, J. B. W.

    2016-02-01

    In this study, we contribute to disclose the ecology and seasonal variability of coccolithophores, to improve their use as proxies for environmental variability in the Equatorial Atlantic Ocean. To this aim, the coccolithophore export fluxes and species composition were investigated from a trans-Atlantic array of sediment trap moorings from NW Africa (Cape Blanc) into the Caribbean (Barbados) (i.e., CB at 20°N/52ºW: M1 at 12ºN/23ºW; M2 at 14ºN/37ºW; M4 at 12ºN/49ºW). Each of the sediment trap devices was deployed at 1200 m depth, sampling settling particles at two-week intervals, and covering a full year (Oct. 2012 to Oct. 2013). First results show important contrasts between both ends of the trans-Atlantic array: total coccolith fluxes were much higher in the oligotrophic station M4 (western part of the basin) than in the highly productive waters off Cape Blanc (eastern edge of the basin), mostly due to the overwhelming dominance of the deep photic layer species Florisphaera profunda and Gladiolithus flabellatus. Off Cape Blanc, higher abundances of the placolith-bearing species Emiliania huxleyi and Gephyrocapsa spp. were found, more typical of the upper photic layer, while F. profunda decreases in relative abundance and G. flabellatus is almost absent, in comparison to M4. The presence of trans-Atlantic ecological gradients in terms of species diversity and prevalence of K- and r-selected species will be discussed with respect to the prevailing environmental conditions during the monitored period, including Saharan-dust deposition and the influence of the Amazon River plume.This study is part of ongoing multidisciplinary research in the study area, in the context of the projects "DUSTRAFFIC" and "TRAFFIC - Transatlantic Fluxes of Saharan Dust".

  1. Synthesis, characterization and application of electroless metal assisted silicon nanowire arrays

    Sahoo, Sumanta Kumar [Centre for Nanoscience & Technology, Department of Mechanical Engineering, Mepco Schlenk Engineering College, Sivakasi 626 005, Tamilnadu (India); Marikani, Arumugam, E-mail: amari@mepcoeng.ac.in [Department of Physics, Mepco Schlenk Engineering College, Sivakasi 626 005, Tamilnadu (India)

    2015-12-01

    Highlights: • Preparation of Silicon nanowire arrays (SiNWs) by electroless metal deposition technique. • From analysis, it has been found that the as-prepared SiNWs are of 3.5–4.0 μm and 75 nm of length and diameter in average respectively. Further a characteristic Raman peak at 520 cm{sup −1} also has been observed. • It exhibits good electron field-emission properties with turn-on field (E{sub 0}) of about 8.26 V μm{sup −1} at current density (J) of 4.9 μA cm{sup −2}. • Functionalized SiNWs have been used for electrochemical detection bovine serum albumin protein bio-molecules. - Abstract: Vertically aligned silicon nanowire arrays (SiNWs) have been synthesized by electroless metal deposition process. The fabricated SiNWs have an average diameter of 75 nm and 3.5–4.0 μm length, as confirmed from scanning electron microscopy. A characteristic asymmetric peak broadening at 520 cm{sup −1} from Raman spectroscopy was obtained for the SiNWs as compared to the bulk silicon crystal due to phonon confinement. The as-prepared SiNWs exhibit good electron field-emission properties with turn-on field of about 8.26 V μm{sup −1} at a current density of 4.9 μA cm{sup −2}. The SiNWs was functionalized by coating with a thin gold metallic film for 60 s, and then used as bio-probe for the detection of bovine serum albumin (BSA) protein molecules. From the linear sweep voltammetry analysis, the Au coated SiNWs, exhibit linear response to the BSA analyte with increase in concentration. The minimum detection limit of the protein molecule was calculated of about 1.16 μM by the as-synthesized SiNWs probe.

  2. Structure and magnetic properties of CoxCu1−x nanowires in self-assembled arrays

    Almasi Kashi, M.; Ramazani, A.; Adelnia Najafabadi, F.

    2012-01-01

    Highlights: ► Role of non-magnetic Cu on the microstructure and magnetic properties of Co x Cu 1−x nanowires. ► Composition variation through ac pulse electrodeposition. ► Replacement of Co with Cu by electroless phenomenon during the off-time between pulses. - Abstract: CoCu alloy nanowire arrays were ac-pulse electrodeposited into porous anodic aluminum oxide. The effect of off-time between pulses and Cu concentration on the magnetic properties, crystalline structure and weight percentage of Co x Cu 1−x alloy nanowires have been studied by alternating gradient force magnetometer (AGFM), X-ray diffraction pattern (XRD) and energy dispersed spectrometry (EDS), respectively. Increasing the off-time between pulses decreased the weight percentage of Co in the range of (x = 0.84 − 0.24). Results of EDS were in accordance with saturation magnetization per unit area of the samples. Coexistence of a moderate off-time and Cu concentration provided excellent conditions for fabrication of the composite nanowires which were proved by XRD patterns.

  3. Co3O4 nanowire@NiO nanosheet arrays for high performance asymmetric supercapacitors.

    Xing, Lei; Dong, Yidi; Hu, Fang; Wu, Xiang; Umar, Ahmad

    2018-04-24

    Herein, we report a simple and facile sequential hydrothermal process for the synthesis of Co3O4 nanowire@NiO nanosheet arrays (CNAs). The as-synthesized CNAs were characterized in detail using various analytical techniques, which confirmed the high crystallinity, purity, and high-density growth of these nanomaterials. From an application point of view, the as-synthesized CNAs were directly used as supercapacitor electrodes, revealing a specific capacitance of up to 2018 mF cm-2 at a current density of 2 mA cm-2. Furthermore, a flexible asymmetric supercapacitor was fabricated using the as-synthesized CNAs as the anode and activated carbon as the cathode, which revealed a specific capacitance of 134.6 mF cm-2 at a current density of 2 mA cm-2. In addition, the supercapacitor showed excellent capacity retention of 73.5% after 10 000 cycles at a current density of 10 mA cm-2.

  4. Thermally responsive silicon nanowire arrays for native/denatured-protein separation

    Wang Hongwei; Wang Yanwei; Yuan Lin; Wang Lei; Yang Weikang; Wu Zhaoqiang; Li Dan; Chen Hong

    2013-01-01

    We present our findings of the selective adsorption of native and denatured proteins onto thermally responsive, native-protein resistant poly(N-isopropylacrylamide) (PNIPAAm) decorated silicon nanowire arrays (SiNWAs). The PNIPAAm–SiNWAs surface, which shows very low levels of native-protein adsorption, favors the adsorption of denatured proteins. The amount of denatured-protein adsorption is higher at temperatures above the lower critical solution temperature (LCST) of PNIPAAm. Temperature cycling surrounding the LCST, which ensures against thermal denaturation of native proteins, further increases the amount of denatured-protein adsorption. Moreover, the PNIPAAm–SiNWAs surface is able to selectively adsorb denatured protein even from mixtures of different protein species; meanwhile, the amount of native proteins in solution is kept nearly at its original level. It is believed that these results will not only enrich current understanding of protein interactions with PNIPAAm-modified SiNWAs surfaces, but may also stimulate applications of PNIPAAm–SiNWAs surfaces for native/denatured protein separation. (paper)

  5. Oriented Polyaniline Nanowire Arrays Grown on Dendrimer (PAMAM) Functionalized Multiwalled Carbon Nanotubes as Supercapacitor Electrode Materials.

    Jin, Lin; Jiang, Yu; Zhang, Mengjie; Li, Honglong; Xiao, Linghan; Li, Ming; Ao, Yuhui

    2018-04-19

    At present, PANI/MWNT composites have been paid more attention as promising electrode materials in supercapacitors. Yet some shortcomings still limit the widely application of PANI/MWNT electrolytes. In this work, in order to improve capacitance ability and long-term stability of electrode, a multi-amino dendrimer (PAMAM) had been covalently linked onto multi-walled carbon nanotubes (MWNT) as a bridge to facilitating covalent graft of polyaniline (PANI), affording P-MWNT/PANI electrode composites for supercapacitor. Surprisingly, ordered arrays of PANI nanowires on MWNT (setaria-like morphology) had been observed by scanning electron microscopy (SEM). Electrochemical properties of P-MWNT/PANI electrode had been characterized by cyclic voltammetry (CV) and galvanostatic charge-discharge technique. The specific capacitance and long cycle life of P-MWNT-PANI electrode material were both much higher than MWNT/PANI. These interesting results indicate that multi-amino dendrimer, PAMAM, covalently linked on MWNT provides more reaction sites for in-situ polymerization of ordered PANI, which could efficiently shorten the ion diffusion length in electrolytes and lead to making fully use of conducting materials.

  6. Fluorinion transfer in silver-assisted chemical etching for silicon nanowires arrays

    Feng, Tianyu; Xu, Youlong; Zhang, Zhengwei; Mao, Shengchun

    2015-01-01

    Graphical abstract: - Highlights: • How Ag transfers F − to the adjacent Si atom was investigated and deduced by DFT at atomic scale. • Three-electrode CV tests proved the transferring function of Ag in the etching reaction. • Uniform SiNWAs were fabricated on unpolished silicon wafers with KOH pretreatment. - Abstract: Uniform silicon nanowires arrays (SiNWAs) were fabricated on unpolished rough silicon wafers through KOH pretreatment followed by silver-assisted chemical etching (SACE). Density functional theory (DFT) calculations were used to investigate the function of silver (Ag) at atomic scale in the etching process. Among three adsorption sites of Ag atom on Si(1 0 0) surface, Ag(T4) above the fourth-layer surface Si atoms could transfer fluorinion (F − ) to adjacent Si successfully due to its stronger electrostatic attraction force between Ag(T4) and F − , smaller azimuth angle of F−Ag(T4)−Si, shorter bond length of F−Si compared with F−Ag. As F − was transferred to adjacent Si by Ag(T4) one by one, the Si got away from the wafer in the form of SiF 4 when it bonded with enough F − while Ag(T4) was still attached onto the Si wafer ready for next transfer. Cyclic voltammetry tests confirmed that Ag can improve the etching rate by transferring F − to Si

  7. Fluorinion transfer in silver-assisted chemical etching for silicon nanowires arrays

    Feng, Tianyu; Xu, Youlong; Zhang, Zhengwei; Mao, Shengchun

    2015-08-01

    Uniform silicon nanowires arrays (SiNWAs) were fabricated on unpolished rough silicon wafers through KOH pretreatment followed by silver-assisted chemical etching (SACE). Density functional theory (DFT) calculations were used to investigate the function of silver (Ag) at atomic scale in the etching process. Among three adsorption sites of Ag atom on Si(1 0 0) surface, Ag(T4) above the fourth-layer surface Si atoms could transfer fluorinion (F-) to adjacent Si successfully due to its stronger electrostatic attraction force between Ag(T4) and F-, smaller azimuth angle of Fsbnd Ag(T4)sbnd Si, shorter bond length of Fsbnd Si compared with Fsbnd Ag. As F- was transferred to adjacent Si by Ag(T4) one by one, the Si got away from the wafer in the form of SiF4 when it bonded with enough F- while Ag(T4) was still attached onto the Si wafer ready for next transfer. Cyclic voltammetry tests confirmed that Ag can improve the etching rate by transferring F- to Si.

  8. Laser desorption/ionization from nanostructured surfaces: nanowires, nanoparticle films and silicon microcolumn arrays

    Chen Yong; Luo Guanghong; Diao Jiajie; Chornoguz, Olesya; Reeves, Mark; Vertes, Akos

    2007-01-01

    Due to their optical properties and morphology, thin films formed of nanoparticles are potentially new platforms for soft laser desorption/ionization (SLDI) mass spectrometry. Thin films of gold nanoparticles (with 12±1 nm particle size) were prepared by evaporation-driven vertical colloidal deposition and used to analyze a series of directly deposited polypeptide samples. In this new SLDI method, the required laser fluence for ion detection was equal or less than what was needed for matrix-assisted laser desorption/ionization (MALDI) but the resulting spectra were free of matrix interferences. A silicon microcolumn array-based substrate (a.k.a. black silicon) was developed as a new matrix-free laser desorption ionization surface. When low-resistivity silicon wafers were processed with a 22 ps pulse length 3xω Nd:YAG laser in air, SF 6 or water environment, regularly arranged conical spikes emerged. The radii of the spike tips varied with the processing environment, ranging from approximately 500 nm in water, to ∼2 μm in SF 6 gas and to ∼5 μm in air. Peptide mass spectra directly induced by a nitrogen laser showed the formation of protonated ions of angiotensin I and II, substance P, bradykinin fragment 1-7, synthetic peptide, pro14-arg, and insulin from the processed silicon surfaces but not from the unprocessed areas. Threshold fluences for desorption/ionization were similar to those used in MALDI. Although compared to silicon nanowires the threshold laser pulse energy for ionization is significantly (∼10x) higher, the ease of production and robustness of microcolumn arrays offer complementary benefits

  9. Ternary nanocomposite of polyaniline/manganese dioxide/titanium nitride nanowire array for supercapacitor electrode

    Xia, Chi; Xie, Yibing; Du, Hongxiu; Wang, Wei

    2015-01-01

    The electroactive polyaniline (PANI) and manganese oxide (MnO 2 ) were integrated with titanium nitride (TiN) nanowire array (NWA) to form PANI/MnO 2 /TiN ternary nanocomposite for supercapacitor application. TiN NWA was prepared via a seed-assisted hydrothermal synthesis and ammonia nitridization process. The electroactive MnO 2 and PANI was layer-by-layer coated on TiN NWA to form heterogeneous coaxial structure through a stepwise electrodeposition process. Scanning electron micrographs revealed that the well-separated TiN NWA was composed of well-distributed nanowires with diameters in the range of 10–30 nm and a total length of 1.5 μm. A villiform MnO 2 layer with a thickness of 10–20 nm covered on TiN NWA to form MnO 2 /TiN NWA composite. The coral-like PANI layer with thicknesses in the range of 20–50 nm covered on the above MnO 2 /TiN NWA to form PANI/MnO 2 /TiN NWA. Electrochemical measurements showed that a high specific capacitance of 674 F g −1 at a current density of 1 A g −1 (based on total mass of PANI/MnO 2 ) was obtained for PANI/MnO 2 /TiN NWA ternary nanocomposite, which was much higher than that of PANI/MnO 2 /carbon-cloth composites reported previously. This ternary nanocomposite also showed a good rate and cycling stability. Moreover, in comparison with PANI/TiN NWA or MnO 2 /TiN NWA, the specific capacitance of PANI/MnO 2 /TiN NWA was obviously enhanced due to the extra pseudocapacitance contribution and the effective surface area of coral-like PANI layer, showing the advantage of manipulating the heterogeneous coaxial configuration between PANI and MnO 2 for fundamentally improved capacitive performance. These results demonstrated that PANI/MnO 2 /TiN NWA ternary nanocomposite was a promising candidate electrode material for supercapacitor application

  10. Ternary nanocomposite of polyaniline/manganese dioxide/titanium nitride nanowire array for supercapacitor electrode

    Xia, Chi; Xie, Yibing, E-mail: ybxie@seu.edu.cn; Du, Hongxiu; Wang, Wei [Southeast University, School of Chemistry and Chemical Engineering (China)

    2015-01-15

    The electroactive polyaniline (PANI) and manganese oxide (MnO{sub 2}) were integrated with titanium nitride (TiN) nanowire array (NWA) to form PANI/MnO{sub 2}/TiN ternary nanocomposite for supercapacitor application. TiN NWA was prepared via a seed-assisted hydrothermal synthesis and ammonia nitridization process. The electroactive MnO{sub 2} and PANI was layer-by-layer coated on TiN NWA to form heterogeneous coaxial structure through a stepwise electrodeposition process. Scanning electron micrographs revealed that the well-separated TiN NWA was composed of well-distributed nanowires with diameters in the range of 10–30 nm and a total length of 1.5 μm. A villiform MnO{sub 2} layer with a thickness of 10–20 nm covered on TiN NWA to form MnO{sub 2}/TiN NWA composite. The coral-like PANI layer with thicknesses in the range of 20–50 nm covered on the above MnO{sub 2}/TiN NWA to form PANI/MnO{sub 2}/TiN NWA. Electrochemical measurements showed that a high specific capacitance of 674 F g{sup −1} at a current density of 1 A g{sup −1} (based on total mass of PANI/MnO{sub 2}) was obtained for PANI/MnO{sub 2}/TiN NWA ternary nanocomposite, which was much higher than that of PANI/MnO{sub 2}/carbon-cloth composites reported previously. This ternary nanocomposite also showed a good rate and cycling stability. Moreover, in comparison with PANI/TiN NWA or MnO{sub 2}/TiN NWA, the specific capacitance of PANI/MnO{sub 2}/TiN NWA was obviously enhanced due to the extra pseudocapacitance contribution and the effective surface area of coral-like PANI layer, showing the advantage of manipulating the heterogeneous coaxial configuration between PANI and MnO{sub 2} for fundamentally improved capacitive performance. These results demonstrated that PANI/MnO{sub 2}/TiN NWA ternary nanocomposite was a promising candidate electrode material for supercapacitor application.

  11. Fabrication of CoPd alloy nanowire arrays on an anodic aluminum oxide/Ti/Si substrate and their enhanced magnetic properties

    Xu Cailing; Li Hua; Xue Tong; Li Hulin

    2006-01-01

    An anodic aluminum oxide/Ti/Si substrate was successfully synthesized by the anodization of an aluminum film on a Ti/Si substrate and then used as a template to grow 10 nm diameter CoPd alloy nanowires. X-ray diffraction and energy-dispersed X-ray patterns indicated that Co 0.97 Pd 0.03 nanowire arrays with a preferential orientation of (0 0 2) were formed during electrodeposition. High coercivity (about 1700 Oe) and squareness (about 0.85) were obtained in the samples when the magnetic field was applied parallel to the axis of the nanowires; these values are much larger than those of pure Co nanowire arrays with the same diameters

  12. Understanding and removing surface states limiting charge transport in TiO2 nanowire arrays for enhanced optoelectronic device performance.

    Sheng, Xia; Chen, Liping; Xu, Tao; Zhu, Kai; Feng, Xinjian

    2016-03-01

    Charge transport within electrode materials plays a key role in determining the optoelectronic device performance. Aligned single-crystal TiO 2 nanowire arrays offer an ideal electron transport path and are expected to have higher electron mobility. Unfortunately, their transport is found not to be superior to that in nanoparticle films. Here we show that the low electron transport in rutile TiO 2 nanowires is mainly caused by surface traps in relatively deep energy levels, which cannot be removed by conventional approaches, such as oxygen annealing treatment. Moreover, we demonstrate an effective wet-chemistry approach to minimize these trap states, leading to over 20-fold enhancement in electron diffusion coefficient and 62% improvement in solar cell performance. On the basis of our results, the potential of TiO 2 NWs can be developed and well-utilized, which is significantly important for their practical applications.

  13. Magnetic and superconducting nanowires

    Piraux, L.; Encinas, A.; Vila, L.

    2005-01-01

    magnetic and superconducting nanowires. Using different approaches entailing measurements on both single wires and arrays, numerous interesting physical properties have been identified in relation to the nanoscopic dimensions of these materials. Finally, various novel applications of the nanowires are also...

  14. Vertical nanowire architectures

    Vlad, A.; Mátéfl-Tempfli, M.; Piraux, L.

    2010-01-01

    Nanowires and statistics: A statistical process for reading ultradense arrays of nanostructured materials is presented (see image). The experimental realization is achieved through selective nanowire growth using porous alumina templates. The statistical patterning approach is found to provide ri...

  15. Scalable Direct Writing of Lanthanide-Doped KMnF3 Perovskite Nanowires into Aligned Arrays with Polarized Up-Conversion Emission.

    Shi, Shuo; Sun, Ling-Dong; Xue, Ying-Xian; Dong, Hao; Wu, Ke; Guo, Shi-Chen; Wu, Bo-Tao; Yan, Chun-Hua

    2018-05-09

    The use of one-dimensional nano- and microstructured semiconductor and lanthanide materials is attractive for polarized-light-emission studies. Up-conversion emission from single-nanorod or anisotropic nanoparticles with a degree of polarization has also been discussed. However, microscale arrays of nanoparticles, especially well-aligned one-dimensional nanostructures as well as their up-conversion polarization characterization, have not been investigated yet. Herein, we present a novel and facile paradigm for preparing highly aligned arrays of lanthanide-doped KMnF 3 (KMnF 3 :Ln) perovskite nanowires, which are good candidates for polarized up-conversion emission studies. These perovskite nanowires, with a width of 10 nm and length of a few micrometers, are formed through the oriented attachment of KMnF 3 :Ln nanocubes along the [001] direction. By the employment of KMnF 3 :Ln nanowire gel as nanoink, a direct-writing method is developed to obtain diverse types of aligned patterns from the nanoscale to the wafer scale. Up-conversion emissions from the highly aligned nanowire arrays are polarized along the array direction with a polarization degree up to 60%. Taking advantage of microscopic nanowire arrays, these polarized up-conversion emissions should offer potential applications in light or information transportation.

  16. Indium Arsenide Nanowires

    Madsen, Morten Hannibal

    -ray diffraction. InAs NWs can be used in a broad range of applications, including detectors, high speed electronics and low temperature transport measurements, but in this thesis focus will be put on biological experiments on living cells. Good control of Au-assisted InAs NW growth has been achieved......This thesis is about growth of Au-assisted and self-assisted InAs nanowires (NWs). The wires are synthesized using a solid source molecular beam epitaxy (MBE) system and characterized with several techniques including scanning electron microscopy (SEM), transmission electron microscopy (TEM) and x...... by a systematic study to optimize the growth conditions; first the Au deposition, then the growth temperature and finally the beam fluxes. For further control of the growth, Au droplets have been positioned with electron beam lithography and large scale arrays with a > 99 % yield have been made on 2 inch...

  17. Highly catalytic and stabilized titanium nitride nanowire array-decorated graphite felt electrodes for all vanadium redox flow batteries

    Wei, L.; Zhao, T. S.; Zeng, L.; Zeng, Y. K.; Jiang, H. R.

    2017-02-01

    In this work, we prepare a highly catalytic and stabilized titanium nitride (TiN) nanowire array-decorated graphite felt electrode for all vanadium redox flow batteries (VRFBs). Free-standing TiN nanowires are synthesized by a two-step process, in which TiO2 nanowires are first grown onto the surface of graphite felt via a seed-assisted hydrothermal method and then converted to TiN through nitridation reaction. When applied to VRFBs, the prepared electrode enables the electrolyte utilization and energy efficiency to be 73.9% and 77.4% at a high current density of 300 mA cm-2, which are correspondingly 43.3% and 15.4% higher than that of battery assembled with a pristine electrode. More impressively, the present battery exhibits good stability and high capacity retention during the cycle test. The superior performance is ascribed to the significant improvement in the electrochemical kinetics and enlarged active sites toward V3+/V2+ redox reaction.

  18. Earth-Abundant Oxygen Evolution Catalysts Coupled onto ZnO Nanowire Arrays for Efficient Photoelectrochemical Water Cleavage

    Jiang, Chaoran; Moniz, Savio J A; Khraisheh, Majeda; Tang, Junwang

    2014-01-01

    ZnO has long been considered as a model UV-driven photoanode for photoelectrochemical water splitting, but its performance has been limited by fast charge-carrier recombination, extremely poor stability in aqueous solution, and slow kinetics of water oxidation. These issues were addressed by applying a strategy of optimization and passivation of hydrothermally grown 1D ZnO nanowire arrays. The length and diameter of bare ZnO nanowires were optimized by varying the growth time and precursor concentration to achieve optimal photoelectrochemical performance. The addition of earth-abundant cobalt phosphate (Co-Pi) and nickel borate (Ni-B) oxygen evolution catalysts onto ZnO nanowires resulted in substantial cathodic shifts in onset potential to as low as about 0.3 V versus the reversible hydrogen electrode (RHE) for Ni-B/ZnO, for which a maximum photocurrent density of 1.1 mA cm−2 at 0.9 V (vs. RHE) with applied bias photon-to-current efficiency of 0.4 % and an unprecedented near-unity incident photon-to-current efficiency at 370 nm. In addition the potential required for saturated photocurrent was dramatically reduced from 1.6 to 0.9 V versus RHE. Furthermore, the stability of these ZnO nanowires was significantly enhanced by using Ni-B compared to Co-Pi due to its superior chemical robustness, and it thus has additional functionality as a stable protecting layer on the ZnO surface. These remarkable enhancements in both photocatalytic activity and stability directly address the current severe limitations in the use of ZnO-based photoelectrodes for water-splitting applications, and can be applied to other photoanodes for efficient solar-driven fuel synthesis. PMID:25156820

  19. Effects of ZnS layer on the performance improvement of the photosensitive ZnO nanowire arrays solar cells

    Javed, Hafiz Muhammad Asif [Electronic Materials Research Laboratory, International Center for Dielectric Research, Key Laboratory of the Ministry of Education, Xi' an Jiaotong University, Xi' an, 710049 (China); Que, Wenxiu, E-mail: wxque@mail.xjtu.edu.cn [Electronic Materials Research Laboratory, International Center for Dielectric Research, Key Laboratory of the Ministry of Education, Xi' an Jiaotong University, Xi' an, 710049 (China); Gao, Yanping; Xing, Yonglei [Electronic Materials Research Laboratory, International Center for Dielectric Research, Key Laboratory of the Ministry of Education, Xi' an Jiaotong University, Xi' an, 710049 (China); Kong, Ling Bing, E-mail: ELBKong@ntu.edu.sg [School of Materials Science and Engineering, Nanyang Technological University, Nanyang Avenue, 639798 (Singapore)

    2016-08-01

    The impact of ZnS layer as an interface modification on the photosensitive ZnO nanowire arrays solar cells was studied. CdS, CdSe and ZnS were deposited on ZnO nanowire arrays by SILAR method. When a ZnS layer was deposited, the quantum dot barrier was indirectly become in contact with the electrolyte, which thus restrained the flow of electrons. The CdS sensitized solar cells has an efficiency of 0.55% with the deposition of the ZnS(3) layer, that is, with a deposition of three times, whereas the CdS/CdSe co-sensitized solar cells has an efficiency of 2.03% with the deposition of the ZnS(1) layer. It was also noted that as the thickness of the of ZnS layer was increased, V{sub oc}, I{sub sc} and efficiencies of both the solar cells were first increased and then decreased. In addition, the CdS/N719 solar cells has an efficiency of 0.75% with the deposition of the ZnS(2) layer. - Highlights: • The impact of ZnS layer on the photosensitive ZnO nanowire solar cells was studied. • ZnS layer restrained the flow of electrons to the electrolyte. • CdS/CdSe co-sensitized solar cells have higher efficiency than CdS solar cells. • When ZnS layer was increased, V{sub oc} and I{sub sc} firstly increased and then decreased.

  20. Spray-Deposited Large-Area Copper Nanowire Transparent Conductive Electrodes and Their Uses for Touch Screen Applications.

    Chu, Hsun-Chen; Chang, Yen-Chen; Lin, Yow; Chang, Shu-Hao; Chang, Wei-Chung; Li, Guo-An; Tuan, Hsing-Yu

    2016-05-25

    Large-area conducting transparent conducting electrodes (TCEs) were prepared by a fast, scalable, and low-cost spray deposition of copper nanowire (CuNW) dispersions. Thin, long, and pure copper nanowires were obtained via the seed-mediated growth in an organic solvent-based synthesis. The mean length and diameter of nanowires are, respectively, 37.7 μm and 46 nm, corresponding to a high-mean-aspect ratio of 790. These wires were spray-deposited onto a glass substrate to form a nanowire conducting network which function as a TCE. CuNW TCEs exhibit high-transparency and high-conductivity since their relatively long lengths are advantageous in lowering in the sheet resistance. For example, a 2 × 2 cm(2) transparent nanowire electrode exhibits transmittance of T = 90% with a sheet resistance as low as 52.7 Ω sq(-1). Large-area sizes (>50 cm(2)) of CuNW TCEs were also prepared by the spray coating method and assembled as resistive touch screens that can be integrated with a variety of devices, including LED lighting array, a computer, electric motors, and audio electronic devices, showing the capability to make diverse sizes and functionalities of CuNW TCEs by the reported method.

  1. Integration of a highly ordered gold nanowires array with glucose oxidase for ultra-sensitive glucose detection.

    Cui, Jiewu; Adeloju, Samuel B; Wu, Yucheng

    2014-01-27

    A highly sensitive amperometric nanobiosensor has been developed by integration of glucose oxidase (GO(x)) with a gold nanowires array (AuNWA) by cross-linking with a mixture of glutaraldehyde (GLA) and bovine serum albumin (BSA). An initial investigation of the morphology of the synthesized AuNWA by field emission scanning electron microscopy (FESEM) and field emission transmission electron microscopy (FETEM) revealed that the nanowires array was highly ordered with rough surface, and the electrochemical features of the AuNWA with/without modification were also investigated. The integrated AuNWA-BSA-GLA-GO(x) nanobiosensor with Nafion membrane gave a very high sensitivity of 298.2 μA cm(-2) mM(-1) for amperometric detection of glucose, while also achieving a low detection limit of 0.1 μM, and a wide linear range of 5-6000 μM. Furthermore, the nanobiosensor exhibited excellent anti-interference ability towards uric acid (UA) and ascorbic acid (AA) with the aid of Nafion membrane, and the results obtained for the analysis of human blood serum indicated that the device is capable of glucose detection in real samples. Copyright © 2013 Elsevier B.V. All rights reserved.

  2. High Discharge Energy Density at Low Electric Field Using an Aligned Titanium Dioxide/Lead Zirconate Titanate Nanowire Array.

    Zhang, Dou; Liu, Weiwei; Guo, Ru; Zhou, Kechao; Luo, Hang

    2018-02-01

    Polymer-based capacitors with high energy density have attracted significant attention in recent years due to their wide range of potential applications in electronic devices. However, the obtained high energy density is predominantly dependent on high applied electric field, e.g., 400-600 kV mm -1 , which may bring more challenges relating to the failure probability. Here, a simple two-step method for synthesizing titanium dioxide/lead zirconate titanate nanowire arrays is exploited and a demonstration of their ability to achieve high discharge energy density capacitors for low operating voltage applications is provided. A high discharge energy density of 6.9 J cm -3 is achieved at low electric fields, i.e., 143 kV mm -1 , which is attributed to the high relative permittivity of 218.9 at 1 kHz and high polarization of 23.35 µC cm -2 at this electric field. The discharge energy density obtained in this work is the highest known for a ceramic/polymer nanocomposite at such a low electric field. The novel nanowire arrays used in this work are applicable to a wide range of fields, such as energy harvesting, energy storage, and photocatalysis.

  3. Fabrication and characterization of gold nano-wires templated on virus-like arrays of tobacco mosaic virus coat proteins

    Wnęk, M; Stockley, P G; Górzny, M Ł; Evans, S D; Ward, M B; Brydson, R; Wälti, C; Davies, A G

    2013-01-01

    The rod-shaped plant virus tobacco mosaic virus (TMV) is widely used as a nano-fabrication template, and chimeric peptide expression on its major coat protein has extended its potential applications. Here we describe a simple bacterial expression system for production and rapid purification of recombinant chimeric TMV coat protein carrying C-terminal peptide tags. These proteins do not bind TMV RNA or form disks at pH 7. However, they retain the ability to self-assemble into virus-like arrays at acidic pH. C-terminal peptide tags in such arrays are exposed on the protein surface, allowing interaction with target species. We have utilized a C-terminal His-tag to create virus coat protein-templated nano-rods able to bind gold nanoparticles uniformly. These can be transformed into gold nano-wires by deposition of additional gold atoms from solution, followed by thermal annealing. The resistivity of a typical annealed wire created by this approach is significantly less than values reported for other nano-wires made using different bio-templates. This expression construct is therefore a useful additional tool for the creation of chimeric TMV-like nano-rods for bio-templating. (paper)

  4. Fabrication and characterization of gold nano-wires templated on virus-like arrays of tobacco mosaic virus coat proteins

    Wnęk, M.; Górzny, M. Ł.; Ward, M. B.; Wälti, C.; Davies, A. G.; Brydson, R.; Evans, S. D.; Stockley, P. G.

    2013-01-01

    The rod-shaped plant virus tobacco mosaic virus (TMV) is widely used as a nano-fabrication template, and chimeric peptide expression on its major coat protein has extended its potential applications. Here we describe a simple bacterial expression system for production and rapid purification of recombinant chimeric TMV coat protein carrying C-terminal peptide tags. These proteins do not bind TMV RNA or form disks at pH 7. However, they retain the ability to self-assemble into virus-like arrays at acidic pH. C-terminal peptide tags in such arrays are exposed on the protein surface, allowing interaction with target species. We have utilized a C-terminal His-tag to create virus coat protein-templated nano-rods able to bind gold nanoparticles uniformly. These can be transformed into gold nano-wires by deposition of additional gold atoms from solution, followed by thermal annealing. The resistivity of a typical annealed wire created by this approach is significantly less than values reported for other nano-wires made using different bio-templates. This expression construct is therefore a useful additional tool for the creation of chimeric TMV-like nano-rods for bio-templating.

  5. Achieving sub-50 nm controlled diameter of aperiodic Si nanowire arrays by ultrasonic catalyst removal for photonic applications

    Chaliyawala, Harsh A.; Purohit, Zeel; Khanna, Sakshum; Ray, Abhijit; Pati, Ranjan K.; Mukhopadhyay, Indrajit

    2018-05-01

    We report an alternative approach to fabricate the vertically aligned aperiodic Si nanowire arrays by controlling the diameter of the Ag nanoparticles and tuneable ultrasonic removal. The process begins by sputtering the Ag thin film (t=5 nm) on the Si/SiO2 substrates. Followed by Ag thin film, annealed for various temperature (T=300°C, 400°C, 500°C and 600°C) to selectively achieve a high density, well-spaced and diameter controlled Ag nanoparticles (AgNPs) on the Si/SiO2 substrates. The sacrificial layer of AgNPs size indicates the controlled diameter of the Si nanowire arrays. Image J analysis for various annealed samples gives an indication of the high density, uniformity and equal distribution of closely packed AgNPs. Furthermore, the AgNPs covered with Au/Pd mesh (5 nm) as a template, was removed by ultrasonication in the etchant solution for several times in different intervals of preparation. The conventional and facile metal assisted electroless etching approach was finally employed to fabricate the vertically aperiodic sub-50 nm SiNWAs, can be applicable to various nanoscale opto-electronic applications.

  6. GaAs nanowire array solar cells with axial p-i-n junctions.

    Yao, Maoqing; Huang, Ningfeng; Cong, Sen; Chi, Chun-Yung; Seyedi, M Ashkan; Lin, Yen-Ting; Cao, Yu; Povinelli, Michelle L; Dapkus, P Daniel; Zhou, Chongwu

    2014-06-11

    Because of unique structural, optical, and electrical properties, solar cells based on semiconductor nanowires are a rapidly evolving scientific enterprise. Various approaches employing III-V nanowires have emerged, among which GaAs, especially, is under intense research and development. Most reported GaAs nanowire solar cells form p-n junctions in the radial direction; however, nanowires using axial junction may enable the attainment of high open circuit voltage (Voc) and integration into multijunction solar cells. Here, we report GaAs nanowire solar cells with axial p-i-n junctions that achieve 7.58% efficiency. Simulations show that axial junctions are more tolerant to doping variation than radial junctions and lead to higher Voc under certain conditions. We further study the effect of wire diameter and junction depth using electrical characterization and cathodoluminescence. The results show that large diameter and shallow junctions are essential for a high extraction efficiency. Our approach opens up great opportunity for future low-cost, high-efficiency photovoltaics.

  7. The control of the growth orientations of electrodeposited single-crystal nanowire arrays: a case study for hexagonal CdS

    Sun Hongyu; Li Xiaohong; Chen Yan; Li Wei; Zhang Xiangyi [State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, 066004 Qinhuangdao (China); Li Feng; Liu Baoting [College of Physics Science and Technology, Hebei University, 071002 Baoding (China)], E-mail: xyzh66@ysu.edu.cn

    2008-06-04

    The controllable growth of highly aligned and ordered semiconductor nanowire arrays is crucial for their potential applications in nanodevices. In the present study, both the growth orientation and the microstructure of hexagonal CdS nanowire arrays electrodeposited in a porous alumina template with 40 nm diameter pores have been controlled by simply tuning the deposition current density. An extremely low current density of 0.05 mA cm{sup -2} is favorable for the growth of single-crystal CdS nanowires along the normal direction of the intrinsic low-surface-energy (103) face. This can be understood well by a modified critical dimension model given in the present work.

  8. The control of the growth orientations of electrodeposited single-crystal nanowire arrays: a case study for hexagonal CdS

    Sun Hongyu; Li Xiaohong; Chen Yan; Li Wei; Zhang Xiangyi; Li Feng; Liu Baoting

    2008-01-01

    The controllable growth of highly aligned and ordered semiconductor nanowire arrays is crucial for their potential applications in nanodevices. In the present study, both the growth orientation and the microstructure of hexagonal CdS nanowire arrays electrodeposited in a porous alumina template with 40 nm diameter pores have been controlled by simply tuning the deposition current density. An extremely low current density of 0.05 mA cm -2 is favorable for the growth of single-crystal CdS nanowires along the normal direction of the intrinsic low-surface-energy (103) face. This can be understood well by a modified critical dimension model given in the present work

  9. Deposition of fan-shaped ZnMoO{sub 4} on ZnCo{sub 2}O{sub 4} nanowire arrays for high electrochemical performance

    Fan, Zihao; Zhang, Xiaojun [Anhui Normal University, Key Laboratory for Functional Molecular Solids of the Education Ministry of China, Center for Nano Science and Technology, College of Chemistry and Materials Science, Wuhu (China)

    2017-04-15

    In this research, fan-shaped ZnMoO{sub 4} is deposited on flower-like ZnCo{sub 2}O{sub 4} nanowire arrays by two-step hydrothermal method. ZnCo{sub 2}O{sub 4} nanowire is synthesized first and used as the backbone to support ZnMoO{sub 4}. The flower-like ZnCo{sub 2}O{sub 4} nanowire arrays are fully overspread by ZnMoO{sub 4}. And this unique structure shows a high capacitance of 1506 F g{sup -1} when used as electrode for supercapacitor at a current density of 1 A g{sup -1} and a good cycling ability (5000 cycles). (orig.)

  10. Synthesis, structural and optical properties of pure and rare-earth ion doped TiO{sub 2} nanowire arrays by a facile hydrothermal technique

    Bandi, Vengala Rao; Raghavan, Chinnambedu Murugesan; Grandhe, Bhaskar kumar; Kim, Sang Su [Department of Physics, Changwon National University, Changwon 641-773 (Korea, Republic of); Jang, Kiwan, E-mail: kwjang@changwon.ac.kr [Department of Physics, Changwon National University, Changwon 641-773 (Korea, Republic of); Shin, Dong-Soo [Department of Chemistry, Changwon National University, Changwon 641-773 (Korea, Republic of); Yi, Soung-Soo [Department of Photonics, Silla University, Busan 617-736 (Korea, Republic of); Jeong, Jung-Hyun [Department of Physics, Pukyong National University, Busan 608-737 (Korea, Republic of)

    2013-11-29

    Single crystalline pure and rare-earth metal ions (Eu{sup 3+} and Ce{sup 3+}) doped TiO{sub 2} nanowire arrays were prepared on conductive fluorine doped indium tin oxide substrates by a facile hydrothermal method. Initially the conditions and parameters were optimized to prepare the high quality TiO{sub 2} nanowire arrays in the absence of organic additives. The average diameter and length of the TiO{sub 2} nanowire were found to be ∼ 30–50 nm and ∼ 0.5–1.5 μm, respectively. The formations of rutile phase structure in all the samples were confirmed by x-ray diffractometric analysis while the transmission electron microscopy confirms the single crystallinity and the maximum orientation of growth direction along [001] for the as-grown TiO{sub 2} nanowire. The optical properties of all the samples were analyzed using photoluminescence spectroscopy. The photocatalytic properties of the pure and doped TiO{sub 2} were investigated for the decomposition of organic toludine blue-O dye under ultraviolet irradiation. The result demonstrates that the Ce{sup 3+}: TiO{sub 2} decomposed almost 90% of the organic dye within 80 min. - Highlights: • Rare-earth (RE) doped TiO{sub 2} nanowire arrays were prepared by hydrothermal method • RE doping enhanced the growth rate of TiO{sub 2} nanowire arrays • The catalysts used to check their photocatalytic activity by toludine blue-O dye • RE doped TiO2 act as unprecedented photocatalyst for organic dye decomposition.

  11. Electrical and Optical Characterization of Nanowire based Semiconductor Devices

    Ayvazian, Talin

    This research project is focused on a new strategy for the creation of nanowire based semiconductor devices. The main goal is to understand and optimize the electrical and optical properties of two types of nanoscale devices; in first type lithographically patterned nanowire electrodeposition (LPNE) method has been utilized to fabricate nanowire field effect transistors (NWFET) and second type involved the development of light emitting semiconductor nanowire arrays (NWLED). Field effect transistors (NWFETs) have been prepared from arrays of polycrystalline cadmium selenide (pc-CdSe) nanowires using a back gate configuration. pc-CdSe nanowires were fabricated using the lithographically patterned nanowire electrode- position (LPNE) process on SiO2 /Si substrates. After electrodeposition, pc-CdSe nanowires were thermally annealed at 300 °C x 4 h either with or without exposure to CdCl 2 in methanol a grain growth promoter. The influence of CdCl2 treatment was to increase the mean grain diameter as determined by X-ray diffraction pattern and to convert the crystal structure from cubic to wurtzite. Transfer characteristics showed an increase of the field effect mobility (mu eff) by an order of magnitude and increase of the Ion/I off ratio by a factor of 3-4. Light emitting devices (NW-LED) based on lithographically patterned pc-CdSe nanowire arrays have been investigated. Electroluminescence (EL) spectra of CdSe nanowires under various biases exhibited broad emission spectra centered at 750 nm close to the band gap of CdSe (1.7eV). To enhance the intensity of the emitted light and the external quantum efficiency (EQE), the distance between the contacts were reduced from 5 mum to less than 1 mum which increased the efficiency by an order of magnitude. Also, increasing the annealing temperature of nanowires from 300 °C x4 h to 450 This research project is focused on a new strategy for the creation of nanowire based semiconductor devices. The main goal is to understand

  12. Development of Highly Ordered Heterostructured Semiconductor Nanowire Arrays for Sub-Wavelength Optical Devices

    2007-06-01

    properties of nanowires" J. Appl. Phys 98, 094306 (2005) 9. Harry E. Ruda and Alexander Shik, "Polarization-sensitive optical properties of metallic and...34Biexcitons in parabolic quantum dots", Phys. Rev. B. 73, 125321 (2006). 11. M. Blumin, H.E. Ruda, I. Savelyev , A Shik and H. Wang, "Self-assembled InAs

  13. A Water-Based Silver-Nanowire Screen-Print Ink for the Fabrication of Stretchable Conductors and Wearable Thin-Film Transistors.

    Liang, Jiajie; Tong, Kwing; Pei, Qibing

    2016-07-01

    A water-based silver-nanowire (AgNW) ink is formulated for screen printing. Screen-printed AgNW patterns have uniform sharp edges, ≈50 μm resolution, and electrical conductivity as high as 4.67 × 10(4) S cm(-1) . The screen-printed AgNW patterns are used to fabricate a stretchable composite conductor, and a fully printed and intrinsically stretchable thin-film transistor array is also realized. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Continuous-flow system and monitoring tools for the dielectrophoretic integration of nanowires in light sensor arrays.

    Marín, A García; Núñez, C García; Rodríguez, P; Shen, G; Kim, S M; Kung, P; Piqueras, J; Pau, J L

    2015-03-20

    Although nanowires (NWs) may improve the performance of many optoelectronic devices such as light emitters and photodetectors, the mass commercialization of these devices is limited by the difficult task of finding reliable and reproducible methods to integrate the NWs on foreign substrates. This work shows the fabrication of zinc oxide NWs photodetectors on conventional glass using transparent conductive electrodes to effectively integrate the NWs at specific locations by dielectrophoresis (DEP). The paper describes the careful preparation of NW dispersions by sedimentation and the dielectrophoretic alignment of NWs in a home-made system. This system includes an impedance technique for the assessment of the alignment quality in real time. Following this procedure, ultraviolet photodetectors based on the electrical contacts formed by the DEP process on the transparent electrodes are fabricated. This cost-effective mean of contacting NWs enables front-and back-illumination operation modes, the latter eliminating shadowing effects caused by the deposition of metals. The electro-optical characterization of the devices shows uniform responsivities in the order of 106 A W(-1) below 390 nm under both modes, as well as, time responses of a few seconds.

  15. Monolithic integration of a silicon nanowire field-effect transistors array on a complementary metal-oxide semiconductor chip for biochemical sensor applications.

    Livi, Paolo; Kwiat, Moria; Shadmani, Amir; Pevzner, Alexander; Navarra, Giulio; Rothe, Jörg; Stettler, Alexander; Chen, Yihui; Patolsky, Fernando; Hierlemann, Andreas

    2015-10-06

    We present a monolithic complementary metal-oxide semiconductor (CMOS)-based sensor system comprising an array of silicon nanowire field-effect transistors (FETs) and the signal-conditioning circuitry on the same chip. The silicon nanowires were fabricated by chemical vapor deposition methods and then transferred to the CMOS chip, where Ti/Pd/Ti contacts had been patterned via e-beam lithography. The on-chip circuitry measures the current flowing through each nanowire FET upon applying a constant source-drain voltage. The analog signal is digitized on chip and then transmitted to a receiving unit. The system has been successfully fabricated and tested by acquiring I-V curves of the bare nanowire-based FETs. Furthermore, the sensing capabilities of the complete system have been demonstrated by recording current changes upon nanowire exposure to solutions of different pHs, as well as by detecting different concentrations of Troponin T biomarkers (cTnT) through antibody-functionalized nanowire FETs.

  16. Ti@δ-MnO_2 core-shell nanowire arrays as self-supported electrodes of supercapacitors and Li ion batteries

    Zhao, Guangyu; Zhang, Dong; Zhang, Li; Sun, Kening

    2016-01-01

    Highlights: • Ti@δ-MnO_2 core-shell nanowire arrays prepared by a electrochemical method. • Remarkable rate capability as both Li ion battery and supercapacitor electrodes. • Good electronic conductivity and facilitated mass transport. - Abstract: δ-MnO_2 is a promissing electrode material of supercapacitors and Li ion batteries (LIBs) owing to its low cost, layer structure and composite valence of Mn. However, the unfavorable electronic conductivity of δ-MnO_2 restricts its rate capability in both of the two devices. Herein, a vertically standing Ti nanowire array modified with δ-MnO_2 nanoflakes is prepared by a electrodeposition method, and the electrochemical properties of Ti@δ-MnO_2 nanowire arrays in supercapacitors and LIBs are investigated. The results show that, the arrays have a capacity of 195 F g"−"1 at 1.0 A g"−"1 and can cycle more than 10000 rounds at 10 A g"−"1 as electrodes of supercapacitors. On the other hand, the arrays behave good rate capability as LIB cathodes, which can release a capacity of 70 mAh g"−"1 at 10C rate charge/discharge. We suggest that, the good electronic conductivity owing to the core-shell structure and the facilitated mass transport supplied by the array architecture are responsible for the enhanced rate performances in the two devices.

  17. Controllable growth of polyaniline nanowire arrays on hierarchical macro/mesoporous graphene foams for high-performance flexible supercapacitors

    Yu, Pingping; Zhao, Xin; Li, Yingzhi; Zhang, Qinghua

    2017-01-01

    Highlights: • Hierarchical porous graphene foam prepared by templating and embossing method.. • Vertically PANI nanowires aligned on interconnected porous graphene sheets. • The fRGO-F/PANI device exhibited 939 F g"−"1 at 1 A g"−"1. • ED and PD of fRGO-F/PANI device was 20.9 Wh kg"−"1 and 103.2 kW kg"−"1. - Abstract: Free-standing hierarchical macro/mesoporous flexible graphene foam have been constructed by rational intergration ofwell dispersed graphene oxide sheets and amino-modified polystyrene (PS) spheres through a facile “templating and embossing” technique. The three dimensional (3D) macro/mesoporous flexible graphene foam not only inherits the uniform porous structures of graphene foam, but also contains hierarchical macro/mesopores on the struts by sacrificing PS spheres and the activation of KOH, which could providing rapid pathways for ionic and electronic transport to high specific capacitance. Vertically polyaniline (PANI) nanowire arrays are then uniformly deposited onto the hierarchical macro/mesoporous graphene foam(fRGO-F/PANI) by a simple in situ polymerization, which show a high specific capacitance of 939 F g"−"1. Thanks to the synergistic function of 3D bicontinuous hierarchical porous structure of graphene foam and effective immobilization of PANI nanowires on the struts, the assembled symmetric supercapctior with fRGO-F/PANI as electrodes exhibits a maximum energy density and power density of 20.9 Wh kg"−"1 and 103.2 kW kg"−"1, respectively. Moreover, it also displays an excellent cyclic stability with a 88.7% retention after 5000 cycles.

  18. Controllable growth of polyaniline nanowire arrays on hierarchical macro/mesoporous graphene foams for high-performance flexible supercapacitors

    Yu, Pingping [State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620 (China); Department of Materials Science, Fudan University, Shanghai 200433 (China); Zhao, Xin, E-mail: xzhao@dhu.edu.cn [State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620 (China); Li, Yingzhi [State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620 (China); Zhang, Qinghua, E-mail: qhzhang@dhu.edu.cn [State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620 (China)

    2017-01-30

    Highlights: • Hierarchical porous graphene foam prepared by templating and embossing method.. • Vertically PANI nanowires aligned on interconnected porous graphene sheets. • The fRGO-F/PANI device exhibited 939 F g{sup −1} at 1 A g{sup −1}. • ED and PD of fRGO-F/PANI device was 20.9 Wh kg{sup −1} and 103.2 kW kg{sup −1}. - Abstract: Free-standing hierarchical macro/mesoporous flexible graphene foam have been constructed by rational intergration ofwell dispersed graphene oxide sheets and amino-modified polystyrene (PS) spheres through a facile “templating and embossing” technique. The three dimensional (3D) macro/mesoporous flexible graphene foam not only inherits the uniform porous structures of graphene foam, but also contains hierarchical macro/mesopores on the struts by sacrificing PS spheres and the activation of KOH, which could providing rapid pathways for ionic and electronic transport to high specific capacitance. Vertically polyaniline (PANI) nanowire arrays are then uniformly deposited onto the hierarchical macro/mesoporous graphene foam(fRGO-F/PANI) by a simple in situ polymerization, which show a high specific capacitance of 939 F g{sup −1}. Thanks to the synergistic function of 3D bicontinuous hierarchical porous structure of graphene foam and effective immobilization of PANI nanowires on the struts, the assembled symmetric supercapctior with fRGO-F/PANI as electrodes exhibits a maximum energy density and power density of 20.9 Wh kg{sup −1} and 103.2 kW kg{sup −1}, respectively. Moreover, it also displays an excellent cyclic stability with a 88.7% retention after 5000 cycles.

  19. Carbon-Free CoO Mesoporous Nanowire Array Cathode for High-Performance Aprotic Li-O2 Batteries.

    Wu, Baoshan; Zhang, Hongzhang; Zhou, Wei; Wang, Meiri; Li, Xianfeng; Zhang, Huamin

    2015-10-21

    Although various kinds of catalysts have been developed for aprotic Li-O2 battery application, the carbon-based cathodes are still vulnerable to attacks from the discharge intermediates or products, as well as the accompanying electrolyte decomposition. To ameliorate this problem, the free-standing and carbon-free CoO nanowire array cathode was purposely designed for Li-O2 batteries. The single CoO nanowire formed as a special mesoporous structure, owing even comparable specific surface area and pore volume to the typical Super-P carbon particles. In addition to the highly selective oxygen reduction/evolution reactions catalytic activity of CoO cathodes, both excellent discharge specific capacity and cycling efficiency of Li-O2 batteries were obtained, with 4888 mAh gCoO(-1) and 50 cycles during 500 h period. Owing to the synergistic effect between elaborate porous structure and selective intermediate absorption on CoO crystal, a unique bimodal growth phenomenon of discharge products was occasionally observed, which further offers a novel mechanism to control the formation/decomposition morphology of discharge products in nanoscale. This research work is believed to shed light on the future development of high-performance aprotic Li-O2 batteries.

  20. Small signal modulation characteristics of red-emitting (λ = 610 nm) III-nitride nanowire array lasers on (001) silicon

    Jahangir, Shafat; Frost, Thomas; Hazari, Arnab; Yan, Lifan; Stark, Ethan; LaMountain, Trevor; Millunchick, Joanna M.; Ooi, Boon S.; Bhattacharya, Pallab

    2015-01-01

    The small signal modulation characteristics of an InGaN/GaN nanowire array edge- emitting laser on (001) silicon are reported. The emission wavelength is 610 nm. Lattice matched InAlN cladding layers were incorporated in the laser heterostructure for better mode confinement. The suitability of the nanowire lasers for use in plastic fiber communication systems with direct modulation is demonstrated through their modulation bandwidth of f-3dB,max = 3.1 GHz, very low values of chirp (0.8 Å) and α-parameter, and large differential gain (3.1 × 10-17 cm2).

  1. Small signal modulation characteristics of red-emitting (λ = 610 nm) III-nitride nanowire array lasers on (001) silicon

    Jahangir, Shafat

    2015-02-16

    The small signal modulation characteristics of an InGaN/GaN nanowire array edge- emitting laser on (001) silicon are reported. The emission wavelength is 610 nm. Lattice matched InAlN cladding layers were incorporated in the laser heterostructure for better mode confinement. The suitability of the nanowire lasers for use in plastic fiber communication systems with direct modulation is demonstrated through their modulation bandwidth of f-3dB,max = 3.1 GHz, very low values of chirp (0.8 Å) and α-parameter, and large differential gain (3.1 × 10-17 cm2).

  2. Composition and diameter modulation of magnetic nanowire arrays fabricated by a novel approach

    Shaker Salem, Mohamed; Tejo, Felipe; Zierold, Robert; Sergelius, Philip; Montero Moreno, Josep M.; Goerlitz, Detlef; Nielsch, Kornelius; Escrig, Juan

    2018-02-01

    Straight magnetic nanowires composed of nickel and permalloy segments having different diameters are synthesized using a promising approach. This approach involves the controlled electrodeposition of each magnetic material into specially designed diameter-modulated porous alumina templates. Standard alumina templates are exposed to pore widening followed by a protective coating of the pore wall with ultrathin silica and further anodization. Micromagnetic simulations are employed to investigate the process of magnetization reversal in the fabricated nanowires when the magnetic materials exchange their places in the thick and thin segments. It is found that the magnetization reversal occurs by the propagation of transverse domain wall (DW) when the thick segment is composed of permalloy. However, the reversal process proceeds by the propagation of vortex DW when permalloy is located at the thin segment.

  3. Arrays of suspended silicon nanowires defined by ion beam implantation: mechanical coupling and combination with CMOS technology

    Llobet, J.; Rius, G.; Chuquitarqui, A.; Borrisé, X.; Koops, R.; van Veghel, M.; Perez-Murano, F.

    2018-04-01

    We present the fabrication, operation, and CMOS integration of arrays of suspended silicon nanowires (SiNWs). The functional structures are obtained by a top-down fabrication approach consisting in a resistless process based on focused ion beam irradiation, causing local gallium implantation and silicon amorphization, plus selective silicon etching by tetramethylammonium hydroxide, and a thermal annealing process in a boron rich atmosphere. The last step enables the electrical functionality of the irradiated material. Doubly clamped silicon beams are fabricated by this method. The electrical readout of their mechanical response can be addressed by a frequency down-mixing detection technique thanks to an enhanced piezoresistive transduction mechanism. Three specific aspects are discussed: (i) the engineering of mechanically coupled SiNWs, by making use of the nanometer scale overhang that it is inherently-generated with this fabrication process, (ii) the statistical distribution of patterned lateral dimensions when fabricating large arrays of identical devices, and (iii) the compatibility of the patterning methodology with CMOS circuits. Our results suggest that the application of this method to the integration of large arrays of suspended SiNWs with CMOS circuitry is interesting in view of applications such as advanced radio frequency band pass filters and ultra-high-sensitivity mass sensors.

  4. Dye-sensitized solar cells with vertically aligned TiO2 nanowire arrays grown on carbon fibers.

    Cai, Xin; Wu, Hongwei; Hou, Shaocong; Peng, Ming; Yu, Xiao; Zou, Dechun

    2014-02-01

    One-dimensional semiconductor TiO2 nanowires (TNWs) have received widespread attention from solar cell and related optoelectronics scientists. The controllable synthesis of ordered TNW arrays on arbitrary substrates would benefit both fundamental research and practical applications. Herein, vertically aligned TNW arrays in situ grown on carbon fiber (CF) substrates through a facile, controllable, and seed-assisted thermal process is presented. Also, hierarchical TiO2 -nanoparticle/TNW arrays were prepared that favor both the dye loading and depressed charge recombination of the CF/TNW photoanode. An impressive conversion efficiency of 2.48 % (under air mass 1.5 global illumination) and an apparent efficiency of 4.18 % (with a diffuse board) due to the 3D light harvesting of the wire solar cell were achieved. Moreover, efficient and inexpensive wire solar cells made from all-CF electrodes and completely flexible CF-based wire solar cells were demonstrated, taking into account actual application requirements. This work may provide an intriguing avenue for the pursuit of lightweight, cost-effective, and high-performance flexible/wearable solar cells. Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Controllable preparation of TiO{sub 2} nanowire arrays on titanium mesh for flexible dye-sensitized solar cells

    Liu, Wenwu; Lu, Hui; Zhang, Mei; Guo, Min, E-mail: guomin@ustb.edu.cn

    2015-08-30

    Graphical abstract: TiO{sub 2} nanowire arrays with controlled morphology and density have been synthesized on Ti mesh substrates by hydrothermal approach for flexible dye-sensitized solar cells which showed well photovoltaic efficiency of 3.42%. - Highlights: • Flexible titanium mesh was first used for hydrothermal preparation of TiO{sub 2} NWAs. • The formation mechanism of the TiO{sub 2} nanostructures was discussed. • The density, average diameter, and morphology of TiO{sub 2} NWAs can be controlled. • The effects of the sensitization temperature and time on the properties were studied. - Abstract: TiO{sub 2} nanowire arrays (NWAs) with an average diameter of 80 nm have been successfully synthesized on titanium (Ti) mesh substrates via hydrothermal method. The effects of preparing conditions such as concentration of NaOH solution, reaction time, and hydrothermal temperature on the growth of TiO{sub 2} nanoarrays and its related photovoltaic properties were systematically investigated by scanning electron microscopy, X-ray diffraction, and photovoltaic properties test. The growth mechanism of the Ti mesh-supported TiO{sub 2} nanostructures was discussed in detail. Moreover, a parametric study was performed to determine the optimized temperature and time of the dye sensitized process for the flexible dye-sensitized solar cell (DSSC). It is demonstrated that hydrothermal parameters had obvious influence on the morphology and growth density of the as-prepared TiO{sub 2} nanoarrays. In addition, the performance of the flexible DSSC depended strongly on the sensitization temperature and time. By utilizing Ti mesh-supported TiO{sub 2} NWAs (with a length of about 14 μm) as a photoanode, the flexible DSSC with a short circuit current density of 10.49 mA cm{sup −2}, an open-circuit voltage of 0.69 V, and an overall power conversion efficiency of 3.42% was achieved.

  6. Controllable preparation of TiO2 nanowire arrays on titanium mesh for flexible dye-sensitized solar cells

    Liu, Wenwu; Lu, Hui; Zhang, Mei; Guo, Min

    2015-01-01

    Graphical abstract: TiO 2 nanowire arrays with controlled morphology and density have been synthesized on Ti mesh substrates by hydrothermal approach for flexible dye-sensitized solar cells which showed well photovoltaic efficiency of 3.42%. - Highlights: • Flexible titanium mesh was first used for hydrothermal preparation of TiO 2 NWAs. • The formation mechanism of the TiO 2 nanostructures was discussed. • The density, average diameter, and morphology of TiO 2 NWAs can be controlled. • The effects of the sensitization temperature and time on the properties were studied. - Abstract: TiO 2 nanowire arrays (NWAs) with an average diameter of 80 nm have been successfully synthesized on titanium (Ti) mesh substrates via hydrothermal method. The effects of preparing conditions such as concentration of NaOH solution, reaction time, and hydrothermal temperature on the growth of TiO 2 nanoarrays and its related photovoltaic properties were systematically investigated by scanning electron microscopy, X-ray diffraction, and photovoltaic properties test. The growth mechanism of the Ti mesh-supported TiO 2 nanostructures was discussed in detail. Moreover, a parametric study was performed to determine the optimized temperature and time of the dye sensitized process for the flexible dye-sensitized solar cell (DSSC). It is demonstrated that hydrothermal parameters had obvious influence on the morphology and growth density of the as-prepared TiO 2 nanoarrays. In addition, the performance of the flexible DSSC depended strongly on the sensitization temperature and time. By utilizing Ti mesh-supported TiO 2 NWAs (with a length of about 14 μm) as a photoanode, the flexible DSSC with a short circuit current density of 10.49 mA cm −2 , an open-circuit voltage of 0.69 V, and an overall power conversion efficiency of 3.42% was achieved

  7. Preparation and characterization of graphene-based vanadium oxide composite semiconducting films with horizontally aligned nanowire arrays

    Jung, Hye-Mi; Um, Sukkee

    2016-01-01

    Highly oriented crystalline hybrid thin films primarily consisting of Magnéli-phase VO 2 and conductive graphene nanoplatelets are fabricated by a sol–gel process via dipping pyrolysis. A combination of chemical, microstructural, and electrical analyses reveals that graphene oxide (GO)-templated vanadium oxide (VO x ) nanocomposite films exhibit a vertically stacked multi-lamellar nanostructure consisting of horizontally aligned vanadium oxide nanowire (VNW) arrays along the (hk0) set of planes on a GO template, with an average crystallite size of 41.4 Å and a crystallographic tensile strain of 0.83%. In addition, GO-derived VO x composite semiconducting films, which have an sp 3 /sp 2 bonding ratio of 0.862, display thermally induced electrical switching properties in the temperature range of − 20 °C to 140 °C, with a transition temperature of approximately 65 °C. We ascribe these results to the use of GO sheets, which serve as a morphological growth template as well as an electrochemically tunable platform for enhancing the charge-carrier mobility. Moreover, the experimental studies demonstrate that graphene-based Magnéli-phase VO x composite semiconducting films can be used in advanced thermo-sensitive smart sensing/switching applications because of their outstanding thermo-electrodynamic properties and high surface charge density induced by the planar-type VNWs. - Highlights: • VO x -graphene oxide composite (G/VO x ) films were fabricated by sol–gel process. • The G/VO x films mainly consisted of Magnéli-phase VO 2 and reduced graphene sheets. • The G/VO x films exhibited multi-lamellar textures with planar VO x nanowire arrays. • The G/VO x films showed the thermo-sensitive electrical switching properties. • Effects of GOs on the electrical characteristics of the G/VO x films were discussed.

  8. Enhanced Performance of Photoelectrochemical Water Splitting with ITO@α-Fe2O3 Core-Shell Nanowire Array as Photoanode.

    Yang, Jie; Bao, Chunxiong; Yu, Tao; Hu, Yingfei; Luo, Wenjun; Zhu, Weidong; Fu, Gao; Li, Zhaosheng; Gao, Hao; Li, Faming; Zou, Zhigang

    2015-12-09

    Hematite (α-Fe2O3) is one of the most promising candidates for photoelectrodes in photoelectrochemical water splitting system. However, the low visible light absorption coefficient and short hole diffusion length of pure α-Fe2O3 limits the performance of α-Fe2O3 photoelectrodes in water splitting. Herein, to overcome these drawbacks, single-crystalline tin-doped indium oxide (ITO) nanowire core and α-Fe2O3 nanocrystal shell (ITO@α-Fe2O3) electrodes were fabricated by covering the chemical vapor deposited ITO nanowire array with compact thin α-Fe2O3 nanocrystal film using chemical bath deposition (CBD) method. The J-V curves and IPCE of ITO@α-Fe2O3 core-shell nanowire array electrode showed nearly twice as high performance as those of the α-Fe2O3 on planar Pt-coated silicon wafers (Pt/Si) and on planar ITO substrates, which was considered to be attributed to more efficient hole collection and more loading of α-Fe2O3 nanocrystals in the core-shell structure than planar structure. Electrochemical impedance spectra (EIS) characterization demonstrated a low interface resistance between α-Fe2O3 and ITO nanowire arrays, which benefits from the well contact between the core and shell. The stability test indicated that the prepared ITO@α-Fe2O3 core-shell nanowire array electrode was stable under AM1.5 illumination during the test period of 40,000 s.

  9. Highly ordered nanowire arrays on plastic substrates for ultrasensitive flexible chemical sensors.

    McAlpine, Michael C; Ahmad, Habib; Wang, Dunwei; Heath, James R

    2007-05-01

    The development of a robust method for integrating high-performance semiconductors on flexible plastics could enable exciting avenues in fundamental research and novel applications. One area of vital relevance is chemical and biological sensing, which if implemented on biocompatible substrates, could yield breakthroughs in implantable or wearable monitoring systems. Semiconducting nanowires (and nanotubes) are particularly sensitive chemical sensors because of their high surface-to-volume ratios. Here, we present a scalable and parallel process for transferring hundreds of pre-aligned silicon nanowires onto plastic to yield highly ordered films for low-power sensor chips. The nanowires are excellent field-effect transistors, and, as sensors, exhibit parts-per-billion sensitivity to NO2, a hazardous pollutant. We also use SiO2 surface chemistries to construct a 'nano-electronic nose' library, which can distinguish acetone and hexane vapours via distributed responses. The excellent sensing performance coupled with bendable plastic could open up opportunities in portable, wearable or even implantable sensors.

  10. Highly ordered nanowire arrays on plastic substrates for ultrasensitive flexible chemical sensors

    McAlpine, Michael C.; Ahmad, Habib; Wang, Dunwei; Heath, James R.

    2007-05-01

    The development of a robust method for integrating high-performance semiconductors on flexible plastics could enable exciting avenues in fundamental research and novel applications. One area of vital relevance is chemical and biological sensing, which if implemented on biocompatible substrates, could yield breakthroughs in implantable or wearable monitoring systems. Semiconducting nanowires (and nanotubes) are particularly sensitive chemical sensors because of their high surface-to-volume ratios. Here, we present a scalable and parallel process for transferring hundreds of pre-aligned silicon nanowires onto plastic to yield highly ordered films for low-power sensor chips. The nanowires are excellent field-effect transistors, and, as sensors, exhibit parts-per-billion sensitivity to NO2, a hazardous pollutant. We also use SiO2 surface chemistries to construct a `nano-electronic nose' library, which can distinguish acetone and hexane vapours via distributed responses. The excellent sensing performance coupled with bendable plastic could open up opportunities in portable, wearable or even implantable sensors.

  11. Identifying individual n- and p-type ZnO nanowires by the output voltage sign of piezoelectric nanogenerator

    Lin, S S

    2009-08-18

    Based on a comparative study between the piezoelectric outputs of n-type nanowires (NWs) and n-core/p-shell NWs along with the previous study (Lu et al 2009 Nano. Lett. 9 1223), we demonstrate a one-step technique for identifying the conductivity type of individual ZnO nanowires (NWs) based on the output of a piezoelectric nanogenerator without destroying the sample. A negative piezoelectric output voltage indicates an NW is n-type and it appears after the tip scans across the center of the NW, while a positive output voltage reveals p-type conductivity and it appears before the tip scans across the central line of the NW. This atomic force microscopy based technique is reliable for statistically mapping the majority carrier type in ZnO NWs arrays. The technique may also be applied to other wurtzite semiconductors, such as GaN, CdS and ZnS. © 2009 IOP Publishing Ltd.

  12. 1-D Metal Nanobead Arrays within Encapsulated Nanowires via a Red-Ox-Induced Dewetting: Mechanism Study by Atom-Probe Tomography.

    Sun, Zhiyuan; Tzaguy, Avra; Hazut, Ori; Lauhon, Lincoln J; Yerushalmi, Roie; Seidman, David N

    2017-12-13

    Metal nanoparticle arrays are excellent candidates for a variety of applications due to the versatility of their morphology and structure at the nanoscale. Bottom-up self-assembly of metal nanoparticles provides an important complementary alternative to the traditional top-down lithography method and makes it possible to assemble structures with higher-order complexity, for example, nanospheres, nanocubes, and core-shell nanostructures. Here we present a mechanism study of the self-assembly process of 1-D noble metal nanoparticles arrays, composed of Au, Ag, and AuAg alloy nanoparticles. These are prepared within an encapsulated germanium nanowire, obtained by the oxidation of a metal-germanium nanowire hybrid structure. The resulting structure is a 1-D array of equidistant metal nanoparticles with the same diameter, the so-called nanobead (NB) array structure. Atom-probe tomography and transmission electron microscopy were utilized to investigate the details of the morphological and chemical evolution during the oxidation of the encapsulated metal-germanium nanowire hybrid-structures. The self-assembly of nanoparticles relies on the formation of a metal-germanium liquid alloy and the migration of the liquid alloy into the nanowire, followed by dewetting of the liquid during shape-confined oxidation where the liquid column breaks-up into nanoparticles due to the Plateau-Rayleigh instability. Our results demonstrate that the encapsulating oxide layer serves as a structural scaffold, retaining the overall shape during the eutectic liquid formation and demonstrates the relationship between the oxide mechanical properties and the final structural characteristics of the 1-D arrays. The mechanistic details revealed here provide a versatile tool-box for the bottom-up fabrication of 1-D arrays nanopatterning that can be modified for multiple applications according to the RedOx properties of the material system components.

  13. Effect of electroless etching parameters on the growth and reflection properties of silicon nanowires

    Ozdemir, Baris; Unalan, Husnu Emrah; Kulakci, Mustafa; Turan, Rasit

    2011-01-01

    Vertically aligned silicon nanowire (Si NW) arrays have been fabricated over large areas using an electroless etching (EE) method, which involves etching of silicon wafers in a silver nitrate and hydrofluoric acid based solution. A detailed parametric study determining the relationship between nanowire morphology and time, temperature, solution concentration and starting wafer characteristics (doping type, resistivity, crystallographic orientation) is presented. The as-fabricated Si NW arrays were analyzed by field emission scanning electron microscope (FE-SEM) and a linear dependency of nanowire length to both temperature and time was obtained and the change in the growth rate of Si NWs at increased etching durations was shown. Furthermore, the effects of EE parameters on the optical reflectivity of the Si NWs were investigated in this study. Reflectivity measurements show that the 42.8% reflectivity of the starting silicon wafer drops to 1.3%, recorded for 10 μm long Si NW arrays. The remarkable decrease in optical reflectivity indicates that Si NWs have a great potential to be utilized in radial or coaxial p-n heterojunction solar cells that could provide orthogonal photon absorption and enhanced carrier collection.

  14. Effect of electroless etching parameters on the growth and reflection properties of silicon nanowires.

    Ozdemir, Baris; Kulakci, Mustafa; Turan, Rasit; Unalan, Husnu Emrah

    2011-04-15

    Vertically aligned silicon nanowire (Si NW) arrays have been fabricated over large areas using an electroless etching (EE) method, which involves etching of silicon wafers in a silver nitrate and hydrofluoric acid based solution. A detailed parametric study determining the relationship between nanowire morphology and time, temperature, solution concentration and starting wafer characteristics (doping type, resistivity, crystallographic orientation) is presented. The as-fabricated Si NW arrays were analyzed by field emission scanning electron microscope (FE-SEM) and a linear dependency of nanowire length to both temperature and time was obtained and the change in the growth rate of Si NWs at increased etching durations was shown. Furthermore, the effects of EE parameters on the optical reflectivity of the Si NWs were investigated in this study. Reflectivity measurements show that the 42.8% reflectivity of the starting silicon wafer drops to 1.3%, recorded for 10 µm long Si NW arrays. The remarkable decrease in optical reflectivity indicates that Si NWs have a great potential to be utilized in radial or coaxial p-n heterojunction solar cells that could provide orthogonal photon absorption and enhanced carrier collection.

  15. Effect of electroless etching parameters on the growth and reflection properties of silicon nanowires

    Ozdemir, Baris; Kulakci, Mustafa; Turan, Rasit; Emrah Unalan, Husnu

    2011-04-01

    Vertically aligned silicon nanowire (Si NW) arrays have been fabricated over large areas using an electroless etching (EE) method, which involves etching of silicon wafers in a silver nitrate and hydrofluoric acid based solution. A detailed parametric study determining the relationship between nanowire morphology and time, temperature, solution concentration and starting wafer characteristics (doping type, resistivity, crystallographic orientation) is presented. The as-fabricated Si NW arrays were analyzed by field emission scanning electron microscope (FE-SEM) and a linear dependency of nanowire length to both temperature and time was obtained and the change in the growth rate of Si NWs at increased etching durations was shown. Furthermore, the effects of EE parameters on the optical reflectivity of the Si NWs were investigated in this study. Reflectivity measurements show that the 42.8% reflectivity of the starting silicon wafer drops to 1.3%, recorded for 10 µm long Si NW arrays. The remarkable decrease in optical reflectivity indicates that Si NWs have a great potential to be utilized in radial or coaxial p-n heterojunction solar cells that could provide orthogonal photon absorption and enhanced carrier collection.

  16. Nickel Nanowire@Porous NiCo{sub 2}O{sub 4} Nanorods Arrays Grown on Nickel Foam as Efficient Pseudocapacitor Electrode

    Wan, Houzhao; Li, Lang; Zhang, Jun; Liu, Xiang; Wang, Hanbin; Wang, Hao, E-mail: nanoguy@126.com [Faculty of Physics and Electronic Science, Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, Hubei University, Wuhan (China)

    2017-12-13

    A three dimensional hierarchical nanostructure composed of nickel nanowires and porous NiCo{sub 2}O{sub 4} nanorods arrays on the surface of nickel foam is successfully fabricated by a facile route. In this structure, the nickel nanowires are used as core materials to support high-pseudocapacitance NiCo{sub 2}O{sub 4} nanorods and construct the well-defined NiCo{sub 2}O{sub 4} nanorods shell/nickel nanowires core hierarchical structure on nickel foam. Benefiting from the participation of nickel nanowires, the nickel nanowire@NiCo{sub 2}O{sub 4}/Ni foam electrode shows a high areal specific capacitance (7.4 F cm{sup −2} at 5 mA cm{sup −2}), excellent rate capability (88.04% retained at 100 mA cm{sup −2}), and good cycling stability (74.08% retained after 1,500 cycles). The superior electrochemical properties made it promising as electrode for supercapacitors.

  17. Vertically building Zn2SnO4 nanowire arrays on stainless steel mesh toward fabrication of large-area, flexible dye-sensitized solar cells.

    Li, Zhengdao; Zhou, Yong; Bao, Chunxiong; Xue, Guogang; Zhang, Jiyuan; Liu, Jianguo; Yu, Tao; Zou, Zhigang

    2012-06-07

    Zn(2)SnO(4) nanowire arrays were for the first time grown onto a stainless steel mesh (SSM) in a binary ethylenediamine (En)/water solvent system using a solvothermal route. The morphology evolution following this reaction was carefully followed to understand the formation mechanism. The SSM-supported Zn(2)SnO(4) nanowire was utilized as a photoanode for fabrication of large-area (10 cm × 5 cm size as a typical sample), flexible dye-sensitized solar cells (DSSCs). The synthesized Zn(2)SnO(4) nanowires exhibit great bendability and flexibility, proving potential advantage over other metal oxide nanowires such as TiO(2), ZnO, and SnO(2) for application in flexible solar cells. Relative to the analogous Zn(2)SnO(4) nanoparticle-based flexible DSSCs, the nanowire geometry proves to enhance solar energy conversion efficiency through enhancement of electron transport. The bendable nature of the DSSCs without obvious degradation of efficiency and facile scale up gives the as-made flexible solar cell device potential for practical application.

  18. Photoresponsive properties of ultrathin silicon nanowires

    Tran, Duy P.; Macdonald, Thomas J.; Nann, Thomas; Thierry, Benjamin; Wolfrum, Bernhard; Stockmann, Regina; Offenhäusser, Andreas

    2014-01-01

    Functional silicon nanowires (SiNWs) are promising building blocks in the design of highly sensitive photodetectors and bio-chemical sensors. We systematically investigate the photoresponse properties of ultrathin SiNWs (20 nm) fabricated using a size-reduction method based on e-beam lithography and tetramethylammonium hydroxide wet-etching. The high-quality SiNWs were able to detect light from the UV to the visible range with excellent sensitivity (∼1 pW/array), good time response, and high photoresponsivity (R ∼ 2.5 × 10 4  A/W). Improvement of the ultrathin SiNWs' photoresponse has been observed in comparison to 40 nm counter-part nanowires. These properties are attributable to the predominance surface-effect due to the high surface-to-volume ratio of ultrathin SiNWs. Long-term measurements at different temperatures in both the forward and reverse bias directions demonstrated the stability and reliability of the fabricated device. By sensitizing the fabricated SiNW arrays with cadmium telluride quantum dots (QDs), hybrid QD SiNW devices displayed an improvement in photocurrent response under UV light, while preserving their performance in the visible light range. The fast, stable, and high photoresponse of these hybrid nanostructures is promising towards the development of optoelectronic and photovoltaic devices

  19. Photoresponsive properties of ultrathin silicon nanowires

    Tran, Duy P.; Macdonald, Thomas J.; Nann, Thomas; Thierry, Benjamin, E-mail: a.offenhaeusser@fz-juelich.de, E-mail: benjamin.thierry@unisa.edu.au [Ian Wark Research Institute, University of South Australia, Mawson Lakes Campus, MM Bldg., Mawson Lakes Blvd., Mawson Lakes, South Australia 5095 (Australia); Wolfrum, Bernhard; Stockmann, Regina; Offenhäusser, Andreas, E-mail: a.offenhaeusser@fz-juelich.de, E-mail: benjamin.thierry@unisa.edu.au [Peter Grünberg Institute, Forschungszentrum Jülich GmbH, 2.4v Bldg., Wilhelm-Johnen St., Jülich 52428 (Germany)

    2014-12-08

    Functional silicon nanowires (SiNWs) are promising building blocks in the design of highly sensitive photodetectors and bio-chemical sensors. We systematically investigate the photoresponse properties of ultrathin SiNWs (20 nm) fabricated using a size-reduction method based on e-beam lithography and tetramethylammonium hydroxide wet-etching. The high-quality SiNWs were able to detect light from the UV to the visible range with excellent sensitivity (∼1 pW/array), good time response, and high photoresponsivity (R ∼ 2.5 × 10{sup 4 }A/W). Improvement of the ultrathin SiNWs' photoresponse has been observed in comparison to 40 nm counter-part nanowires. These properties are attributable to the predominance surface-effect due to the high surface-to-volume ratio of ultrathin SiNWs. Long-term measurements at different temperatures in both the forward and reverse bias directions demonstrated the stability and reliability of the fabricated device. By sensitizing the fabricated SiNW arrays with cadmium telluride quantum dots (QDs), hybrid QD SiNW devices displayed an improvement in photocurrent response under UV light, while preserving their performance in the visible light range. The fast, stable, and high photoresponse of these hybrid nanostructures is promising towards the development of optoelectronic and photovoltaic devices.

  20. 3D ZnIn2S4 nanosheet/TiO2 nanowire arrays and their efficient photocathodic protection for 304 stainless steel

    Sun, Wenxia; Wei, Na; Cui, Hongzhi; Lin, Yuan; Wang, Xinzhen; Tian, Jian; Li, Jian; Wen, Jing

    2018-03-01

    A well-designed heterostructure engineered ZnIn2S4 nanosheet/TiO2 nanowire arrays photoanode is investigated for photocathodic protection. The ZnIn2S4 nanosheets are distributed uniformly on the surface of the TiO2 nanowire by a hydrothermal method. The stem-and-leaf-like ZnIn2S4 nanosheet/TiO2 nanowire arrays exhibit excellent photoelectrochemical properties, owing to the energy band structure and large surface area. A maximum photocurrent density of 2 mA cm-2 is achieved for the ZnIn2S4 nanosheet/TiO2 nanowire composite film for a 6 h reaction time under white illumination. Moreover, the potential of the 304 stainless steel coupled with the composite film immediately shifts negatively to -1.17 V (vs. SCE), which is significantly lower than the corrosion potential (-0.201 V vs. SCE). Thus, the composite film offers a superior photocathodic protection for stainless steel against corrosion by a NaCl solution. This study provides a promising approach for the design and synthesis of composite films with enhanced photoelectrochemical performance.

  1. Scalable Top-Down Approach Tailored by Interferometric Lithography to Achieve Large-Area Single-Mode GaN Nanowire Laser Arrays on Sapphire Substrate.

    Behzadirad, Mahmoud; Nami, Mohsen; Wostbrock, Neal; Zamani Kouhpanji, Mohammad Reza; Feezell, Daniel F; Brueck, Steven R J; Busani, Tito

    2018-03-27

    GaN nanowires are promising for optical and optoelectronic applications because of their waveguiding properties and large optical band gap. However, developing a precise, scalable, and cost-effective fabrication method with a high degree of controllability to obtain high-aspect-ratio nanowires with high optical properties and minimum crystal defects remains a challenge. Here, we present a scalable two-step top-down approach using interferometric lithography, for which parameters can be controlled precisely to achieve highly ordered arrays of nanowires with excellent quality and desired aspect ratios. The wet-etch mechanism is investigated, and the etch rates of m-planes {11̅00} (sidewalls) were measured to be 2.5 to 70 nm/h depending on the Si doping concentration. Using this method, uniform nanowire arrays were achieved over a large area (>10 5 μm 2 ) with an spect ratio as large as 50, a radius as small as 17 nm, and atomic-scale sidewall roughness (top-down approach using interferometric lithography and is promising for fabrication of III-nitride-based nanophotonic devices (radial/axial) on the original substrate.

  2. Inclined-wall regular micro-pillar-arrayed surfaces covered entirely with an alumina nanowire forest and their improved superhydrophobicity

    Kim, Dae-Ho; Lee, Dongyun; Cho, Chae-Ryong; Kim, Soo-Hyung; Lee, Deug-Woo; Kim, Jong-Man; Kim, Yongsung; Kang, Jae-Wook; Hong, Suck Won

    2011-01-01

    This paper reports a multiple-scale hierarchically structured superhydrophobic surface that is composed of inclined-wall regular micro-pillar arrays covered entirely with an alumina nanowire forest (ANF) to improve the surface wettability. The multiple-scaled structures were fabricated stably using a simple batch process based on an anisotropic chemical silicon etching process and a subsequent time-controlled anodic aluminum oxide technique. The surface wetting properties of the mono-roughened surfaces with inclined-wall micro-pillar arrays, which are normally in the Wenzel wetting regime, could be transitioned perfectly to the slippery Cassie mode and enhanced greatly in the Wenzel regime in cases of a high- and low-density of the micro-pillars, respectively, by easily amplifying the intrinsic contact angle through the entire coverage of the ANF on the micro-roughened surfaces. The wettability of the proposed multiple-scaled surfaces could also be predicted using analytic surface models and the experimental results agreed greatly with the wetting trends estimated theoretically due to the geometrical regularity of the base micro-structures

  3. Piezo-Phototronic Effect Enhanced Flexible Solar Cells Based on n-ZnO/p-SnS Core-Shell Nanowire Array.

    Zhu, Laipan; Wang, Longfei; Xue, Fei; Chen, Libo; Fu, Jianqiang; Feng, Xiaolong; Li, Tianfeng; Wang, Zhong Lin

    2017-01-01

    The piezo-phototronic effect is about the enhanced separation, transport, and recombination of the photogenerated carriers using the piezoelectric polarization charges present in piezoelectric-semiconductor materials. Here, it is presented that the piezo-phototronic effect can be effectively applied to improve the relative conversion efficiency of a flexible solar cell based on n-ZnO/p-SnS core-shell nanowire array for 37.3% under a moderate vertical pressure. The performance of the solar cell can be effectively enhanced by a gentle bending of the device, showing its potential for application in curly geometries. This study not only adds further understanding about the concept of increasing solar energy conversion efficiency via piezo-phototronic effect, but also demonstrates the great potential of piezo-phototronic effect in the application of large-scale, flexible, and lightweight nanowire array solar cells.

  4. Piezo‐Phototronic Effect Enhanced Flexible Solar Cells Based on n‐ZnO/p‐SnS Core–Shell Nanowire Array

    Zhu, Laipan; Wang, Longfei; Xue, Fei; Chen, Libo; Fu, Jianqiang; Feng, Xiaolong; Li, Tianfeng

    2016-01-01

    The piezo‐phototronic effect is about the enhanced separation, transport, and recombination of the photogenerated carriers using the piezoelectric polarization charges present in piezoelectric‐semiconductor materials. Here, it is presented that the piezo‐phototronic effect can be effectively applied to improve the relative conversion efficiency of a flexible solar cell based on n‐ZnO/p‐SnS core–shell nanowire array for 37.3% under a moderate vertical pressure. The performance of the solar cell can be effectively enhanced by a gentle bending of the device, showing its potential for application in curly geometries. This study not only adds further understanding about the concept of increasing solar energy conversion efficiency via piezo‐phototronic effect, but also demonstrates the great potential of piezo‐phototronic effect in the application of large‐scale, flexible, and lightweight nanowire array solar cells. PMID:28105394

  5. The fabrication of ZnO nanowire field-effect transistors by roll-transfer printing

    Chang, Yi-Kuei; Hong, Franklin Chau-Nan

    2009-05-01

    A method with the potential to fabricate large-area nanowire field-effect transistors (NW-FETs) was demonstrated in this study. Using a high-speed roller (20-80 cm min-1), transfer printing was successfully employed to transfer vertically aligned zinc oxide (ZnO) nanowires grown on a donor substrate to a polydimethylsiloxane (PDMS) stamp and then print the ordered ZnO nanowire arrays on the received substrate for the fabrication of NW-FETs. ZnO NW-FETs fabricated by this method exhibit high performances with a threshold voltage of around 0.25 V, a current on/off ratio as high as 105, a subthreshold slope of 360 mV/dec, and a field-effect mobility of around 90 cm2 V-1 s-1. The excellent device characteristics suggest that the roll-transfer printing technique, which is compatible with the roll-to-roll (R2R) process and operated in atmosphere, has a good potential for the high-speed fabrication of large-area nanowire transistors for flexible devices and flat panel displays.

  6. The fabrication of ZnO nanowire field-effect transistors by roll-transfer printing

    Chang, Y-K; Hong, Franklin Chau-Nan

    2009-01-01

    A method with the potential to fabricate large-area nanowire field-effect transistors (NW-FETs) was demonstrated in this study. Using a high-speed roller (20-80 cm min -1 ), transfer printing was successfully employed to transfer vertically aligned zinc oxide (ZnO) nanowires grown on a donor substrate to a polydimethylsiloxane (PDMS) stamp and then print the ordered ZnO nanowire arrays on the received substrate for the fabrication of NW-FETs. ZnO NW-FETs fabricated by this method exhibit high performances with a threshold voltage of around 0.25 V, a current on/off ratio as high as 10 5 , a subthreshold slope of 360 mV/dec, and a field-effect mobility of around 90 cm 2 V -1 s -1 . The excellent device characteristics suggest that the roll-transfer printing technique, which is compatible with the roll-to-roll (R2R) process and operated in atmosphere, has a good potential for the high-speed fabrication of large-area nanowire transistors for flexible devices and flat panel displays.

  7. The fabrication of ZnO nanowire field-effect transistors by roll-transfer printing

    Chang, Y-K; Hong, Franklin Chau-Nan [Department of Chemical Engineering, National Cheng Kung University, 1 University Road, Tainan 70101, Taiwan (China)], E-mail: hong@mail.ncku.edu.tw

    2009-05-13

    A method with the potential to fabricate large-area nanowire field-effect transistors (NW-FETs) was demonstrated in this study. Using a high-speed roller (20-80 cm min{sup -1}), transfer printing was successfully employed to transfer vertically aligned zinc oxide (ZnO) nanowires grown on a donor substrate to a polydimethylsiloxane (PDMS) stamp and then print the ordered ZnO nanowire arrays on the received substrate for the fabrication of NW-FETs. ZnO NW-FETs fabricated by this method exhibit high performances with a threshold voltage of around 0.25 V, a current on/off ratio as high as 10{sup 5}, a subthreshold slope of 360 mV/dec, and a field-effect mobility of around 90 cm{sup 2} V{sup -1} s{sup -1}. The excellent device characteristics suggest that the roll-transfer printing technique, which is compatible with the roll-to-roll (R2R) process and operated in atmosphere, has a good potential for the high-speed fabrication of large-area nanowire transistors for flexible devices and flat panel displays.

  8. An Efficient and Effective Design of InP Nanowires for Maximal Solar Energy Harvesting.

    Wu, Dan; Tang, Xiaohong; Wang, Kai; He, Zhubing; Li, Xianqiang

    2017-11-25

    Solar cells based on subwavelength-dimensions semiconductor nanowire (NW) arrays promise a comparable or better performance than their planar counterparts by taking the advantages of strong light coupling and light trapping. In this paper, we present an accurate and time-saving analytical design for optimal geometrical parameters of vertically aligned InP NWs for maximal solar energy absorption. Short-circuit current densities are calculated for each NW array with different geometrical dimensions under solar illumination. Optimal geometrical dimensions are quantitatively presented for single, double, and multiple diameters of the NW arrays arranged both squarely and hexagonal achieving the maximal short-circuit current density of 33.13 mA/cm 2 . At the same time, intensive finite-difference time-domain numerical simulations are performed to investigate the same NW arrays for the highest light absorption. Compared with time-consuming simulations and experimental results, the predicted maximal short-circuit current densities have tolerances of below 2.2% for all cases. These results unambiguously demonstrate that this analytical method provides a fast and accurate route to guide high performance InP NW-based solar cell design.

  9. Three-dimensional TiO2 nanowire@NiMoO4 ultrathin nanosheet core-shell arrays for lithium ion batteries

    Cao, Minglei; Bu, Yi; Lv, Xiaowei; Jiang, Xingxing; Wang, Lichuan; Dai, Sirui; Wang, Mingkui; Shen, Yan

    2018-03-01

    This study reports a general and rational two-step hydrothermal strategy to fabricate three-dimensional (3D) TiO2 nanowire@NiMoO4 ultrathin nanosheet core-shell arrays (TNAs-NMO) as additives-free anodes for lithium-ion batteries (LIBs). The TNAs-NMO electrode delivers a reversible capacity of up to 446.6 mA h g-1 over 120 cycles at the current density of 0.2 A g-1 and a high rate capacity of 234.2 mA h g-1 at 2.0 A g-1. Impressively, the capacity retention efficiency is 74.7% after 2500 cycles at the high rate of 2.0 A g-1. In addition, the full cell consisting of TNAs-NMO anode and LCO cathode can afford a specific energy of up to 220.3 W h kg-1 (based on the entire mass of both electrodes). The high electrochemical performance of the TNAs-NMO electrode is ascribed to its 3D core-shell nanowire array architecture, in which the TiO2 nanowire arrays (TNAs) and the ultrathin NiMoO4 nanosheets exhibit strong synergistic effects. The TNAs maintain mechanical integrity of the electrode and the ultrathin NiMoO4 nanosheets contribute to high capacity and favorable electronic conductivity.

  10. NiCo2S4 nanowires array as an efficient bifunctional electrocatalyst for full water splitting with superior activity

    Liu, Danni; Lu, Qun; Luo, Yonglan; Sun, Xuping; Asiri, Abdullah M.

    2015-09-01

    The present communication reports the topotactic conversion of NiCo2O4 nanowires array on carbon cloth (NiCo2O4 NA/CC) into NiCo2S4 NA/CC, which is used as an efficient bifunctional electrocatalyst for water splitting with good durability and superior activity in 1.0 M KOH. This NiCo2S4 NA/CC electrode produces 100 mA cm-2 at an overpotential of 305 mV for hydrogen evolution and 100 mA cm-2 at an overpotential of 340 mV for oxygen evolution. To afford a 10 mA cm-2 water-splitting current, the alkaline water electrolyzer made from NiCo2S4 NA/CC needs a cell voltage of 1.68 V, which is 300 mV less than that for NiCo2O4 NA/CC, and has good stability.The present communication reports the topotactic conversion of NiCo2O4 nanowires array on carbon cloth (NiCo2O4 NA/CC) into NiCo2S4 NA/CC, which is used as an efficient bifunctional electrocatalyst for water splitting with good durability and superior activity in 1.0 M KOH. This NiCo2S4 NA/CC electrode produces 100 mA cm-2 at an overpotential of 305 mV for hydrogen evolution and 100 mA cm-2 at an overpotential of 340 mV for oxygen evolution. To afford a 10 mA cm-2 water-splitting current, the alkaline water electrolyzer made from NiCo2S4 NA/CC needs a cell voltage of 1.68 V, which is 300 mV less than that for NiCo2O4 NA/CC, and has good stability. Electronic supplementary information (ESI) available: Experimental section and ESI Figures. See DOI: 10.1039/c5nr04064g

  11. Effect of the template-assisted electrodeposition parameters on the structure and magnetic properties of Co nanowire arrays

    Kac, Malgorzata, E-mail: malgorzata.kac@ifj.edu.pl [Institute of Nuclear Physics Polish Academy of Sciences, ul. Radzikowskiego 152, 31-342 Krakow (Poland); Zarzycki, Arkadiusz [Institute of Nuclear Physics Polish Academy of Sciences, ul. Radzikowskiego 152, 31-342 Krakow (Poland); Kac, Slawomir [AGH University of Science and Technology, al. A. Mickiewicza 30, 30-059 Krakow (Poland); Kopec, Marek; Perzanowski, Marcin; Dutkiewicz, Erazm M.; Suchanek, Katarzyna; Maximenko, Alexey; Marszalek, Marta [Institute of Nuclear Physics Polish Academy of Sciences, ul. Radzikowskiego 152, 31-342 Krakow (Poland)

    2016-09-15

    Highlights: • Magnetic properties of Co nanowires in polycarbonate membranes were studied. • Electrodeposition stages were illustrated by SEM images. • Electrolyte and membrane parameters were optimized for Co nanowire fabrication. • Low temperature and potential favored nanowires with high coercivity and squareness. - Abstract: We studied the magnetic properties of Co nanowires electrodeposited in polycarbonate membranes as a function of the electrodeposition and template parameters. We showed the response of the current as a function of time, for nanowires prepared in various conditions. X-ray diffraction measurements indicate that nanowires have polycrystalline hcp structure with small addition of fcc phase. Magnetic properties analyzed by SQUID measurements suggest that easy axis of magnetization follows the nanowire axis with coercivity increasing with a decrease of nanowire diameter and length. The largest coercivity, equal to 850 Oe, was obtained for nanowires with the diameter of 30 nm and the length of 1.5 μm. We find the coercivity to be insensitive to pH value. Low electrodeposition temperature, low cathodic potential, and medium pH are the synthesis parameters most beneficial for large coercivity and/or magnetic anisotropy with easy axis along nanowires.

  12. Non-classical logic inverter coupling a ZnO nanowire-based Schottky barrier transistor and adjacent Schottky diode.

    Hosseini Shokouh, Seyed Hossein; Raza, Syed Raza Ali; Lee, Hee Sung; Im, Seongil

    2014-08-21

    On a single ZnO nanowire (NW), we fabricated an inverter-type device comprising a Schottky diode (SD) and field-effect transistor (FET), aiming at 1-dimensional (1D) electronic circuits with low power consumption. The SD and adjacent FET worked respectively as the load and driver, so that voltage signals could be easily extracted as the output. In addition, NW FET with a transparent conducting oxide as top gate turned out to be very photosensitive, although ZnO NW SD was blind to visible light. Based on this, we could achieve an array of photo-inverter cells on one NW. Our non-classical inverter is regarded as quite practical for both logic and photo-sensing due to its performance as well as simple device configuration.

  13. Ultra-sensitive and selective detection of mercury ion (Hg2+) using free-standing silicon nanowire sensors

    Jin, Yan; Gao, Anran; Jin, Qinghui; Li, Tie; Wang, Yuelin; Zhao, Jianlong

    2018-04-01

    In this paper, ultra-sensitive and highly selective Hg2+ detection in aqueous solutions was studied by free-standing silicon nanowire (SiNW) sensors. The all-around surface of SiNW arrays was functionalized with (3-Mercaptopropyl)trimethoxysilane serving as Hg2+ sensitive layer. Due to effective electrostatic control provided by the free-standing structure, a detection limit as low as 1 ppt was obtained. A linear relationship (R 2 = 0.9838) between log(CHg2+ ) and a device current change from 1 ppt to 5 ppm was observed. Furthermore, the developed SiNW sensor exhibited great selectivity for Hg2+ over other heavy metal ions, including Cd2+. Given the extraordinary ability for real-time Hg2+ detection, the small size and low cost of the SiNW device, it is expected to be a potential candidate in field detection of environmentally toxic mercury.

  14. In-situ growth of ZnO nanowire arrays on the sensing electrode via a facile hydrothermal route for high-performance NO2 sensor

    Chen, Xiangxiang; Shen, Yanbai; Zhang, Wei; Zhang, Jin; Wei, Dezhou; Lu, Rui; Zhu, Lijia; Li, Hansen; Shen, Yansong

    2018-03-01

    ZnO nanowire (ZNW) arrays were in-situ grown on the sensing electrode via a facile hydrothermal route for NO2 sensing application. ZNW arrays were prepared by a seed layer deposition on the surface of the sensing electrode using a dipping process in a Zn(CH3COO)2·2H2O ethanol solution followed by a seed growth using a hydrothermal route in the Zn(NO3)2·6H2O-HMTA (C6H12N4) system. The microstructural characterizations of the ZNW arrays by means of XRD, FESEM, TEM, FTIR and XPS showed that ZnO nanowires with the diameters of 80-90 nm and the lengths of 0.6-1 μm had a single crystal hexagonal wurtzite structure. Gas sensing properties demonstrated the response of the sensor based on the ZNW arrays was linearly proportional to the NO2 concentration in the range of 1-30 ppm with good reproducibility and selectivity. The maximum sensor response to NO2 was obtained at an operating temperature of 250 °C. The response and recovery times reduced rapidly with increasing the operating temperature. The growth mechanism and sensing mechanism of the ZNW arrays were discussed in accordance with the deposition of the seed layer and the modulation of the depletion layer, respectively.

  15. Nanowire Growth for Photovoltaics

    Holm, Jeppe Vilstrup

    Solar cells commercial success is based on an efficiency/cost calculation. Nanowire solar cells is one of the foremost candidates to implement third generation photo voltaics, which are both very efficient and cheap to produce. This thesis is about our progress towards commercial nanowire solar...... cells. Resonance effects between the light and nanowire causes an inherent concentration of the sunlight into the nanowires, and means that a sparse array of nanowires (less than 5% of the area) can absorb all the incoming light. The resonance effects, as well as a graded index of refraction, also traps...... the light. The concentration and light trapping means that single junction nanowire solar cells have a higher theoretical maximum efficiency than equivalent planar solar cells. We have demonstrated the built-in light concentration of nanowires, by growing, contacting and characterizing a solar cell...

  16. Optimization of the short-circuit current in an InP nanowire array solar cell through opto-electronic modeling.

    Chen, Yang; Kivisaari, Pyry; Pistol, Mats-Erik; Anttu, Nicklas

    2016-09-23

    InP nanowire arrays with axial p-i-n junctions are promising devices for next-generation photovoltaics, with a demonstrated efficiency of 13.8%. However, the short-circuit current in such arrays does not match their absorption performance. Here, through combined optical and electrical modeling, we study how the absorption of photons and separation of the resulting photogenerated electron-hole pairs define and limit the short-circuit current in the nanowires. We identify how photogenerated minority carriers in the top n segment (i.e. holes) diffuse to the ohmic top contact where they recombine without contributing to the short-circuit current. In our modeling, such contact recombination can lead to a 60% drop in the short-circuit current. To hinder such hole diffusion, we include a gradient doping profile in the n segment to create a front surface barrier. This approach leads to a modest 5% increase in the short-circuit current, limited by Auger recombination with increased doping. A more efficient approach is to switch the n segment to a material with a higher band gap, like GaP. Then, a much smaller number of holes is photogenerated in the n segment, strongly limiting the amount that can diffuse and disappear into the top contact. For a 500 nm long top segment, the GaP approach leads to a 50% higher short-circuit current than with an InP top segment. Such a long top segment could facilitate the fabrication and contacting of nanowire array solar cells. Such design schemes for managing minority carriers could open the door to higher performance in single- and multi-junction nanowire-based solar cells.

  17. Synthesis of ZnO-TiO{sub 2} core-shell long nanowire arrays and their application on dye-sensitized solar cells

    Feng Yamin [Department of Physics, Institute of Nanoscience and Nanotechnology, Central China Normal University, Wuhan 430079 (China); Ji Xiaoxu [School of Physics and Electronic Engineering, Nanyang Normal University, Nanyang 473003 (China); Duan Jinxia; Zhu Jianhui; Jiang Jian; Ding Hao; Meng Gaoxiang; Ding Ruimin; Liu Jinping [Department of Physics, Institute of Nanoscience and Nanotechnology, Central China Normal University, Wuhan 430079 (China); Hu Anzheng [School of Physics and Electronic Engineering, College of Xiangfan, Xiangfan 441813 (China); Huang Xintang, E-mail: xthuang@phy.ccnu.edu.cn [Department of Physics, Institute of Nanoscience and Nanotechnology, Central China Normal University, Wuhan 430079 (China)

    2012-06-15

    Long ZnO nanowire arrays (NAs) grown on fluorine-doped tin oxide (FTO) glasses have been synthesized via a facile hydrothermal method without refreshing the reaction solution and applied as the precursor. By adjusting growth conditions, ZnO NAs with tunable lengths can be achieved. A nanocomposite made of ZnO nanowire core and TiO{sub 2} shell was further realized by a novel 'fast-dip-coating' method conducted in a Ti(OC{sub 4}H{sub 9}){sub 4}-dissolved ethanol solution. The formed ZnO-TiO{sub 2} core-shell NAs on FTO substrates were applied as electrodes for dye sensitized solar cells (DSSCs). It is found that both the TiO{sub 2} coating and NAs length play important roles in the enhancement of photoelectric conversion efficiency (PCE) of DSSCs. When the length of ZnO-TiO{sub 2} NAs reaches up to 14 {mu}m, the electrode can exhibit a maximum PCE as high as 3.80%, which is 2.6 times higher than that of pure ZnO NAs. - Graphical abstract: ZnO nanowire arrays in the length of 14 {mu}m have been successfully synthesized on the FTO substrate and coated with a thin shell of TiO{sub 2}; the ZnO-TiO{sub 2} electrodes applied in DSSCs exhibit great photoelectric conversion efficiency as high as 3.80%. Highlights: Black-Right-Pointing-Pointer Long ZnO nanowire arrays have been synthesized by using hydrothermal method. Black-Right-Pointing-Pointer A TiO{sub 2} shell outside of ZnO nanowire is introduced by a fast dip-coating method. Black-Right-Pointing-Pointer ZnO and ZnO-TiO{sub 2} core-shell nanowires are applied as the electrodes for DSSCs. Black-Right-Pointing-Pointer The maximum conversion efficiency of ZnO-TiO{sub 2} electrode reaches to 3.80%.

  18. Stretchable, Transparent, and Stretch-Unresponsive Capacitive Touch Sensor Array with Selectively Patterned Silver Nanowires/Reduced Graphene Oxide Electrodes.

    Choi, Tae Young; Hwang, Byeong-Ung; Kim, Bo-Yeong; Trung, Tran Quang; Nam, Yun Hyoung; Kim, Do-Nyun; Eom, Kilho; Lee, Nae-Eung

    2017-05-31

    Stretchable and transparent touch sensors are essential input devices for future stretchable transparent electronics. Capacitive touch sensors with a simple structure of only two electrodes and one dielectric are an established technology in current rigid electronics. However, the development of stretchable and transparent capacitive touch sensors has been limited due to changes in capacitance resulting from dimensional changes in elastomeric dielectrics and difficulty in obtaining stretchable transparent electrodes that are stable under large strains. Herein, a stretch-unresponsive stretchable and transparent capacitive touch sensor array was demonstrated by employing stretchable and transparent electrodes with a simple selective-patterning process and by carefully selecting dielectric and substrate materials with low strain responsivity. A selective-patterning process was used to embed a stretchable and transparent silver nanowires/reduced graphene oxide (AgNWs/rGO) electrode line into a polyurethane (PU) dielectric layer on a polydimethylsiloxane (PDMS) substrate using oxygen plasma treatment. This method provides the ability to directly fabricate thin film electrode lines on elastomeric substrates and can be used in conventional processes employed in stretchable electronics. We used a dielectric (PU) with a Poisson's ratio smaller than that of the substrate (PDMS), which prevented changes in the capacitance resulting from stretching of the sensor. The stretch-unresponsive touch sensing capability of our transparent and stretchable capacitive touch sensor has great potential in wearable electronics and human-machine interfaces.

  19. Fabrication of vertical nanowire resonators for aerosol exposure assessment

    Merzsch, Stephan; Wasisto, Hutomo Suryo; Stranz, Andrej; Hinze, Peter; Weimann, Thomas; Peiner, Erwin; Waag, Andreas

    2013-05-01

    Vertical silicon nanowire (SiNW) resonators are designed and fabricated in order to assess exposure to aerosol nanoparticles (NPs). To realize SiNW arrays, nanolithography and inductively coupled plasma (ICP) deep reactive ion etching (DRIE) at cryogenic temperature are utilized in a top-down fabrication of SiNW arrays which have high aspect ratios (i.e., up to 34). For nanolithography process, a resist film thickness of 350 nm is applied in a vacuum contact mode to serve as a mask. A pattern including various diameters and distances for creating pillars is used (i.e., 400 nm up to 5 μm). In dry etching process, the etch rate is set high of 1.5 μm/min to avoid underetching. The etch profiles of Si wires can be controlled aiming to have either perpendicularly, negatively or positively profiled sidewalls by adjusting the etching parameters (e.g., temperature and oxygen content). Moreover, to further miniaturize the wire, multiple sacrificial thermal oxidations and subsequent oxide stripping are used yielding SiNW arrays of 650 nm in diameter and 40 μm in length. In the resonant frequency test, a piezoelectric shear actuator is integrated with the SiNWs inside a scanning electron microscope (SEM) chamber. The observation of the SiNW deflections are performed and viewed from the topside of the SiNWs to reduce the measurement redundancy. Having a high deflection of ~10 μm during its resonant frequency of 452 kHz and a low mass of 31 pg, the proposed SiNW is potential for assisting the development of a portable aerosol resonant sensor.

  20. Long Silver Nanowires Synthesis by Pulsed Electrodeposition

    M.R. Batevandi

    2015-09-01

    Full Text Available Silver nanowires were pulse electrodeposited into nanopore anodic alumina oxide templates. The effects of continuous and pulse electrodeposition waveform on the microstructure properties of the nanowire arrays were studied. It is seen that the microstructure of nanowire is depend to pulse condition. The off time duration of pulse waveform enables to control the growth direction of Ag nanowires.

  1. A facile fluorescent sensor based on silicon nanowires for dithionite

    Cao, Xingxing; Mu, Lixuan; Chen, Min; She, Guangwei

    2018-05-01

    A facile and novel fluorescent sensor for dithionite has been constructed by simultaneously immobilizing dansyl group (fluorescence molecule) and dabsyl group (quencher and recognizing group) on the silicon nanowires (SiNWs) and SiNW arrays surface. This sensor for dithionite exhibited high selectivity and a good relationship of linearity between fluorescence intensities and dithionite concentrations from 0.1 to 1 mM. This approach is straightforward and does not require complicated synthesis, which can be extended to develop other sensors with similar rationale.

  2. Vertically Aligned Niobium Nanowire Arrays for Fast-Charging Micro-Supercapacitors.

    Mirvakili, Seyed M; Hunter, Ian W

    2017-07-01

    Planar micro-supercapacitors are attractive for system on chip technologies and surface mount devices due to their large areal capacitance and energy/power density compared to the traditional oxide-based capacitors. In the present work, a novel material, niobium nanowires, in form of vertically aligned electrodes for application in high performance planar micro-supercapacitors is introduced. Specific capacitance of up to 1 kF m -2 (100 mF cm -2 ) with peak energy and power density of 2 kJ m -2 (6.2 MJ m -3 or 1.7 mWh cm -3 ) and 150 kW m -2 (480 MW m -3 or 480 W cm -3 ), respectively, is achieved. This remarkable power density, originating from the extremely low equivalent series resistance value of 0.27 Ω (2.49 µΩ m 2 or 24.9 mΩ cm 2 ) and large specific capacitance, is among the highest for planar micro-supercapacitors electrodes made of nanomaterials. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Massive transfer of vertically aligned Si nanowire array onto alien substrates and their characteristics

    Shiu, Shu-Chia; Hung, Shih-Che; Chao, Jiun-Jie; Lin, Ching-Fuh

    2009-01-01

    Si nanowires (NWs) are promising materials for future electronic, photovoltaic, and sensor applications. So far the Si NWs are mainly formed on particular substrates or at high temperatures, greatly limiting their application flexibility. Here we report a low temperature process for forming and massively transferring vertically aligned Si NWs on alien substrates with a large density of about (3-5) x 10 7 NWs/mm 2 . The X-ray diffraction spectrum reveals that the transferred NWs exhibit almost the same crystal property as the bulk Si. Our investigation further shows that the transferred NWs have exceptional optical characteristics. The transferred Si NWs of 12.14 μm exhibit the transmittance as low as 0.3% in the near infrared region and 0.07% in the visible region. The extracted absorption coefficient of Si NWs in the near infrared region is about 3 x 10 3 cm -1 , over 30 times larger than that of the bulk Si. Because of the low temperature process, it enables a large variety of alien substrates such as glass and plastics to be used. In addition, the exceptional properties of the transferred NWs offer potential applications for photovoltaic, photo-detectors, sensors, and flexible electronics.

  4. Tapering-induced enhancement of light extraction efficiency of nanowire deep ultraviolet LED by theoretical simulations

    Lin, Ronghui; Galan, Sergio Valdes; Sun, Haiding; Hu, Yangrui; Alias, Mohd Sharizal; Janjua, Bilal; Ng, Tien Khee; Ooi, Boon S.; Li, Xiaohang

    2018-01-01

    A nanowire (NW) structure provides an alternative scheme for deep ultraviolet light emitting diodes (DUV-LEDs) that promises high material quality and better light extraction efficiency (LEE). In this report, we investigate the influence of the tapering angle of closely packed AlGaN NWs, which is found to exist naturally in molecular beam epitaxy (MBE) grown NW structures, on the LEE of NW DUV-LEDs. It is observed that, by having a small tapering angle, the vertical extraction is greatly enhanced for both transverse magnetic (TM) and transverse electric (TE) polarizations. Most notably, the vertical extraction of TM emission increased from 4.8% to 24.3%, which makes the LEE reasonably large to achieve high-performance DUV-LEDs. This is because the breaking of symmetry in the vertical direction changes the propagation of the light significantly to allow more coupling into radiation modes. Finally, we introduce errors to the NW positions to show the advantages of the tapered NW structures can be projected to random closely packed NW arrays. The results obtained in this paper can provide guidelines for designing efficient NW DUV-LEDs.

  5. Tapering-induced enhancement of light extraction efficiency of nanowire deep ultraviolet LED by theoretical simulations

    Lin, Ronghui

    2018-04-21

    A nanowire (NW) structure provides an alternative scheme for deep ultraviolet light emitting diodes (DUV-LEDs) that promises high material quality and better light extraction efficiency (LEE). In this report, we investigate the influence of the tapering angle of closely packed AlGaN NWs, which is found to exist naturally in molecular beam epitaxy (MBE) grown NW structures, on the LEE of NW DUV-LEDs. It is observed that, by having a small tapering angle, the vertical extraction is greatly enhanced for both transverse magnetic (TM) and transverse electric (TE) polarizations. Most notably, the vertical extraction of TM emission increased from 4.8% to 24.3%, which makes the LEE reasonably large to achieve high-performance DUV-LEDs. This is because the breaking of symmetry in the vertical direction changes the propagation of the light significantly to allow more coupling into radiation modes. Finally, we introduce errors to the NW positions to show the advantages of the tapered NW structures can be projected to random closely packed NW arrays. The results obtained in this paper can provide guidelines for designing efficient NW DUV-LEDs.

  6. Construction of Hierarchical CuO/Cu2O@NiCo2S4 Nanowire Arrays on Copper Foam for High Performance Supercapacitor Electrodes

    Zhou, Luoxiao; He, Ying; Jia, Congpu; Pavlinek, Vladimir; Saha, Petr; Cheng, Qilin

    2017-01-01

    Hierarchical copper oxide @ ternary nickel cobalt sulfide (CuO/Cu2O@NiCo2S4) core-shell nanowire arrays on Cu foam have been successfully constructed by a facile two-step strategy. Vertically aligned CuO/Cu2O nanowire arrays are firstly grown on Cu foam by one-step thermal oxidation of Cu foam, followed by electrodeposition of NiCo2S4 nanosheets on the surface of CuO/Cu2O nanowires to form the CuO/Cu2O@NiCo2S4 core-shell nanostructures. Structural and morphological characterizations indicate that the average thickness of the NiCo2S4 nanosheets is ~20 nm and the diameter of CuO/Cu2O core is ~50 nm. Electrochemical properties of the hierarchical composites as integrated binder-free electrodes for supercapacitor were evaluated by various electrochemical methods. The hierarchical composite electrodes could achieve ultrahigh specific capacitance of 3.186 F cm−2 at 10 mA cm−2, good rate capability (82.06% capacitance retention at the current density from 2 to 50 mA cm−2) and excellent cycling stability, with capacitance retention of 96.73% after 2000 cycles at 10 mA cm−2. These results demonstrate the significance of optimized design and fabrication of electrode materials with more sufficient electrolyte-electrode interface, robust structural integrity and fast ion/electron transfer. PMID:28914819

  7. Construction of Hierarchical CuO/Cu₂O@NiCo₂S₄ Nanowire Arrays on Copper Foam for High Performance Supercapacitor Electrodes.

    Zhou, Luoxiao; He, Ying; Jia, Congpu; Pavlinek, Vladimir; Saha, Petr; Cheng, Qilin

    2017-09-15

    Hierarchical copper oxide @ ternary nickel cobalt sulfide (CuO/Cu₂O@NiCo₂S₄) core-shell nanowire arrays on Cu foam have been successfully constructed by a facile two-step strategy. Vertically aligned CuO/Cu₂O nanowire arrays are firstly grown on Cu foam by one-step thermal oxidation of Cu foam, followed by electrodeposition of NiCo₂S₄ nanosheets on the surface of CuO/Cu₂O nanowires to form the CuO/Cu₂O@NiCo₂S₄ core-shell nanostructures. Structural and morphological characterizations indicate that the average thickness of the NiCo₂S₄ nanosheets is ~20 nm and the diameter of CuO/Cu₂O core is ~50 nm. Electrochemical properties of the hierarchical composites as integrated binder-free electrodes for supercapacitor were evaluated by various electrochemical methods. The hierarchical composite electrodes could achieve ultrahigh specific capacitance of 3.186 F cm -2 at 10 mA cm -2 , good rate capability (82.06% capacitance retention at the current density from 2 to 50 mA cm -2 ) and excellent cycling stability, with capacitance retention of 96.73% after 2000 cycles at 10 mA cm -2 . These results demonstrate the significance of optimized design and fabrication of electrode materials with more sufficient electrolyte-electrode interface, robust structural integrity and fast ion/electron transfer.

  8. Vertically oriented CoO@FeOOH nanowire arrays anchored on carbon cloth as a highly efficient electrode for oxygen evolution reaction

    Wang, Yin; Ni, Yuanman; Liu, Bing; Shang, Shuxia; Yang, Song; Cao, Minhua; Hu, Changwen

    2017-01-01

    Graphical abstract: Three-dimensional CoO@FeOOH nanowire arrays grown on carbon cloth were constructed, which exhibit good electrocatalytic activity towards OER in alkaline solution. Display Omitted -- Abstract: Developing high efficiency electrocatalysts for electrocatalytic oxygen evolution reaction (OER) is a key to water splitting. In this work, we demonstrate the preparation of CoO@FeOOH core-shell nanowire (NWs) grown on three-dimensional (3D) carbon cloth (CC@CoO@FeOOH-NWAs) by hydrothermal method followed by electrodeposition process as well as its highly efficient activity for water oxidation. In this hybrid structure, CoO@FeOOH-NWs with an average diameter of 100 nm is vertically grown on the surface of carbon fibers of the carbon cloth. The combination of CoO@FeOOH catalyst with good electron transfer substrate exhibits exceptionally good electrocatalytic activity and long-term durability towards oxygen evolution reaction in alkaline solution. It needs an overpotential as low as 255 mV to achieve the current density of 10 mA cm −2 , with a Tafel slope of 82 mV dec −1 and also exhibits a good stability in 20 h. In addition, the nanowire array structure is well retained after the durability test with high current density of 50 mA cm −2 . Our strategy provides a guide to rational design of micro-structures of the materials to achieve their high performance.

  9. Construction of Hierarchical CuO/Cu2O@NiCo2S4 Nanowire Arrays on Copper Foam for High Performance Supercapacitor Electrodes

    Luoxiao Zhou

    2017-09-01

    Full Text Available Hierarchical copper oxide @ ternary nickel cobalt sulfide (CuO/Cu2O@NiCo2S4 core-shell nanowire arrays on Cu foam have been successfully constructed by a facile two-step strategy. Vertically aligned CuO/Cu2O nanowire arrays are firstly grown on Cu foam by one-step thermal oxidation of Cu foam, followed by electrodeposition of NiCo2S4 nanosheets on the surface of CuO/Cu2O nanowires to form the CuO/Cu2O@NiCo2S4 core-shell nanostructures. Structural and morphological characterizations indicate that the average thickness of the NiCo2S4 nanosheets is ~20 nm and the diameter of CuO/Cu2O core is ~50 nm. Electrochemical properties of the hierarchical composites as integrated binder-free electrodes for supercapacitor were evaluated by various electrochemical methods. The hierarchical composite electrodes could achieve ultrahigh specific capacitance of 3.186 F cm−2 at 10 mA cm−2, good rate capability (82.06% capacitance retention at the current density from 2 to 50 mA cm−2 and excellent cycling stability, with capacitance retention of 96.73% after 2000 cycles at 10 mA cm−2. These results demonstrate the significance of optimized design and fabrication of electrode materials with more sufficient electrolyte-electrode interface, robust structural integrity and fast ion/electron transfer.

  10. MgxZn1-xO(0≤x<0.2) nanowire arrays on sapphire grown by high-pressure pulsed-laser deposition

    Lorenz, M.; Kaidashev, E.M.; Rahm, A.; Nobis, Th.; Lenzner, J.; Wagner, G.; Spemann, D.; Hochmuth, H.; Grundmann, M.

    2005-01-01

    Mg x Zn 1-x O nanowires with Mg-content x from 0 to 0.2 have been grown by high-pressure pulsed-laser deposition (PLD) on gold-covered sapphire single crystals. The PLD process allows for a unique wide-range control of morphology, diameter, and composition of the Mg x Zn 1-x O nanowires. The diameter of single ZnO wires could be varied between about 50 and 3000 nm, and the Mg content x of Mg x Zn 1-x O wire arrays was controlled via the PLD gas pressure. The microscopic homogeneity of Mg content is displayed by cathodoluminescence (CL) imaging of the excitonic peak energy. The fluctuation of CL peak energy between individual wires is about an order of magnitude smaller than the alloy broadening

  11. Thermal expansion behavior study of Co nanowire array with in situ x-ray diffraction and x-ray absorption fine structure techniques

    Mo, Guang; Cai, Quan; Jiang, Longsheng; Wang, Wei; Zhang, Kunhao; Cheng, Weidong; Xing, Xueqing; Chen, Zhongjun; Wu, Zhonghua

    2008-10-01

    In situ x-ray diffraction and x-ray absorption fine structure techniques were used to study the structural change of ordered Co nanowire array with temperature. The results show that the Co nanowires are polycrystalline with hexagonal close packed structure without phase change up until 700 °C. A nonlinear thermal expansion behavior has been found and can be well described by a quadratic equation with the first-order thermal expansion coefficient of 4.3×10-6/°C and the second-order thermal expansion coefficient of 5.9×10-9/°C. The mechanism of this nonlinear thermal expansion behavior is discussed.

  12. Electrical characterization of Ω-gated uniaxial tensile strained Si nanowire-array metal-oxide-semiconductor field effect transistors with - and channel orientations

    Habicht, Stefan; Feste, Sebastian; Zhao, Qing-Tai; Buca, Dan; Mantl, Siegfried

    2012-01-01

    Nanowire-array metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated along and crystal directions on (001) un-/strained silicon-on-insulator substrates. Lateral strain relaxation through patterning was employed to transform biaxial tensile strain into uniaxial tensile strain along the nanowire. Devices feature ideal subthreshold swings and maximum on-current/off-current ratios of 10 11 for n and p-type transistors on both substrates. Electron and hole mobilities were extracted by split C–V method. For p-MOSFETs an increased mobility is observed for channel direction devices compared to devices. The n-MOSFETs showed a 45% increased electron mobility compared to devices. The comparison of strained and unstrained n-MOSFETs along and clearly demonstrates improved electron mobilities for strained channels of both channel orientations.

  13. Control growth of silicon nanocolumns' epitaxy on silicon nanowires

    Chong, Su Kong, E-mail: sukong1985@yahoo.com.my [University of Malaya, Low Dimensional Materials Research Centre, Department of Physics (Malaysia); Dee, Chang Fu [Universiti Kebangsaan Malaysia (UKM), Institute of Microengineering and Nanoelectronics (IMEN) (Malaysia); Yahya, Noorhana [Universiti Teknologi PETRONAS, Faculty of Science and Information Technology (Malaysia); Rahman, Saadah Abdul [University of Malaya, Low Dimensional Materials Research Centre, Department of Physics (Malaysia)

    2013-04-15

    The epitaxial growth of Si nanocolumns on Si nanowires was studied using hot-wire chemical vapor deposition. A single-crystalline and surface oxide-free Si nanowire core (core radius {approx}21 {+-} 5 nm) induced by indium crystal seed was used as a substance for the vapor phase epitaxial growth. The growth process is initiated by sidewall facets, which then nucleate upon certain thickness to form Si islands and further grow to form nanocolumns. The Si nanocolumns with diameter of 10-20 nm and aspect ratio up to 10 can be epitaxially grown on the surface of nanowires. The results showed that the radial growth rate of the Si nanocolumns remains constant with the increase of deposition time. Meanwhile, the radial growth rates are controllable by manipulating the hydrogen to silane gas flow rate ratio. The optical antireflection properties of the Si nanocolumns' decorated SiNW arrays are discussed in the text.

  14. Structural and magnetic characterization of as-prepared and annealed FeCoCu nanowire arrays in ordered anodic aluminum oxide templates

    Rodríguez-González, B., E-mail: jbenito@uvigo.es [CACTI, University of Vigo, E-36310 Vigo (Spain); International Iberian Nanotechnology Laboratory, INL. Av. Mestre J. Veiga, 4715-330 Braga (Portugal); Bran, C.; Warnatz, T.; Vazquez, M. [Institute of Materials Science of Madrid, CSIC, 28049 Madrid (Spain); Rivas, J. [International Iberian Nanotechnology Laboratory, INL. Av. Mestre J. Veiga, 4715-330 Braga (Portugal)

    2014-04-07

    Herein, we report on the preparation, structure, and magnetic characterization of FeCoCu nanowire arrays grown by DC electrodeposition inside self-assembled ordered nanopores of anodic aluminum oxide templates. A systematic study of their structure has been performed both in as-prepared samples and after annealing in the temperature range up to 800 °C, although particular attention has been paid to annealing at 700 °C after which maximum magnetic hardening is achieved. The obtained nanowires have a diameter of 40 nm and their Fe{sub 0.28}Co{sub 0.67}Cu{sub 0.05} composition was confirmed by energy dispersive X-ray spectroscopy (EDS). Focused ion-beam lamellas of two samples (as-prepared and annealed at 700 °C) were prepared for their imaging in the high-resolution transmission electron microscopy (HRTEM) perpendicularly to the electron beam, where the obtained EDS compositional mappings show a homogeneous distribution of the elements. X-ray diffraction analysis, and selected area electron diffraction (SAED) patterns confirm that nanowires exhibit a bcc cubic structure (space group Im-3m). In addition, bright-dark field images show that the nanowires have a polycrystalline structure that remains essentially the same after annealing, but some modifications were observed: (i) an overall increase and sharpening of recrystallized grains, and (ii) an apparent shrinkage of the nanowires diameter. Obtained SAED patterns also show strong textured components with determined <111> and <112> crystalline directions parallel to the wires growth direction. The presence of both directions was also confirmed in the HRTEM images doing Fourier transform analyses. Magnetic measurements show strong magnetic anisotropy with magnetization easy axis parallel to the nanowires in as-prepared and annealed samples. The magnetic properties are tuned by suitable thermal treatments so that, maximum enhanced coercivity (∼2.7 kOe) and normalized remanence (∼0.91 Ms) values are

  15. Structural and magnetic characterization of as-prepared and annealed FeCoCu nanowire arrays in ordered anodic aluminum oxide templates

    Rodríguez-González, B.; Bran, C.; Warnatz, T.; Vazquez, M.; Rivas, J.

    2014-01-01

    Herein, we report on the preparation, structure, and magnetic characterization of FeCoCu nanowire arrays grown by DC electrodeposition inside self-assembled ordered nanopores of anodic aluminum oxide templates. A systematic study of their structure has been performed both in as-prepared samples and after annealing in the temperature range up to 800 °C, although particular attention has been paid to annealing at 700 °C after which maximum magnetic hardening is achieved. The obtained nanowires have a diameter of 40 nm and their Fe 0.28 Co 0.67 Cu 0.05 composition was confirmed by energy dispersive X-ray spectroscopy (EDS). Focused ion-beam lamellas of two samples (as-prepared and annealed at 700 °C) were prepared for their imaging in the high-resolution transmission electron microscopy (HRTEM) perpendicularly to the electron beam, where the obtained EDS compositional mappings show a homogeneous distribution of the elements. X-ray diffraction analysis, and selected area electron diffraction (SAED) patterns confirm that nanowires exhibit a bcc cubic structure (space group Im-3m). In addition, bright-dark field images show that the nanowires have a polycrystalline structure that remains essentially the same after annealing, but some modifications were observed: (i) an overall increase and sharpening of recrystallized grains, and (ii) an apparent shrinkage of the nanowires diameter. Obtained SAED patterns also show strong textured components with determined and crystalline directions parallel to the wires growth direction. The presence of both directions was also confirmed in the HRTEM images doing Fourier transform analyses. Magnetic measurements show strong magnetic anisotropy with magnetization easy axis parallel to the nanowires in as-prepared and annealed samples. The magnetic properties are tuned by suitable thermal treatments so that, maximum enhanced coercivity (∼2.7 kOe) and normalized remanence (∼0.91 Ms) values are achieved after annealing at

  16. Effect of Silicon Nanowire on Crystalline Silicon Solar Cell Characteristics

    Zahra Ostadmahmoodi Do; Tahereh Fanaei Sheikholeslami; Hassan Azarkish

    2016-01-01

    Nanowires (NWs) are recently used in several sensor or actuator devices to improve their ordered characteristics. Silicon nanowire (Si NW) is one of the most attractive one-dimensional nanostructures semiconductors because of its unique electrical and optical properties. In this paper, silicon nanowire (Si NW), is synthesized and characterized for application in photovoltaic device. Si NWs are prepared using wet chemical etching method which is commonly used as a simple and low cost method fo...

  17. Dense Vertically Aligned Copper Nanowire Composites as High Performance Thermal Interface Materials.

    Barako, Michael T; Isaacson, Scott G; Lian, Feifei; Pop, Eric; Dauskardt, Reinhold H; Goodson, Kenneth E; Tice, Jesse

    2017-12-06

    Thermal interface materials (TIMs) are essential for managing heat in modern electronics, and nanocomposite TIMs can offer critical improvements. Here, we demonstrate thermally conductive, mechanically compliant TIMs based on dense, vertically aligned copper nanowires (CuNWs) embedded into polymer matrices. We evaluate the thermal and mechanical characteristics of 20-25% dense CuNW arrays with and without polydimethylsiloxane infiltration. The thermal resistance achieved is below 5 mm 2 K W -1 , over an order of magnitude lower than commercial heat sink compounds. Nanoindentation reveals that the nonlinear deformation mechanics of this TIM are influenced by both the CuNW morphology and the polymer matrix. We also implement a flip-chip bonding protocol to directly attach CuNW composites to copper surfaces, as required in many thermal architectures. Thus, we demonstrate a rational design strategy for nanocomposite TIMs that simultaneously retain the high thermal conductivity of aligned CuNWs and the mechanical compliance of a polymer.

  18. Impact of defects on the electrical transport, optical properties and failure mechanisms of GaN nanowires.

    Armstrong, Andrew M.; Aubry, Sylvie; Shaner, Eric Arthur; Siegal, Michael P.; Li, Qiming; Jones, Reese E.; Westover, Tyler; Wang, George T.; Zhou, Xiao Wang; Talin, Albert Alec; Bogart, Katherine Huderle Andersen; Harris, C. Thomas; Huang, Jian Yu

    2010-09-01

    We present the results of a three year LDRD project that focused on understanding the impact of defects on the electrical, optical and thermal properties of GaN-based nanowires (NWs). We describe the development and application of a host of experimental techniques to quantify and understand the physics of defects and thermal transport in GaN NWs. We also present the development of analytical models and computational studies of thermal conductivity in GaN NWs. Finally, we present an atomistic model for GaN NW electrical breakdown supported with experimental evidence. GaN-based nanowires are attractive for applications requiring compact, high-current density devices such as ultraviolet laser arrays. Understanding GaN nanowire failure at high-current density is crucial to developing nanowire (NW) devices. Nanowire device failure is likely more complex than thin film due to the prominence of surface effects and enhanced interaction among point defects. Understanding the impact of surfaces and point defects on nanowire thermal and electrical transport is the first step toward rational control and mitigation of device failure mechanisms. However, investigating defects in GaN NWs is extremely challenging because conventional defect spectroscopy techniques are unsuitable for wide-bandgap nanostructures. To understand NW breakdown, the influence of pre-existing and emergent defects during high current stress on NW properties will be investigated. Acute sensitivity of NW thermal conductivity to point-defect density is expected due to the lack of threading dislocation (TD) gettering sites, and enhanced phonon-surface scattering further inhibits thermal transport. Excess defect creation during Joule heating could further degrade thermal conductivity, producing a viscous cycle culminating in catastrophic breakdown. To investigate these issues, a unique combination of electron microscopy, scanning luminescence and photoconductivity implemented at the nanoscale will be used in

  19. Three-dimensional vertical Si nanowire MOS capacitor model structure for the study of electrical versus geometrical Si nanowire characteristics

    Hourdakis, E.; Casanova, A.; Larrieu, G.; Nassiopoulou, A. G.

    2018-05-01

    Three-dimensional (3D) Si surface nanostructuring is interesting towards increasing the capacitance density of a metal-oxidesemiconductor (MOS) capacitor, while keeping reduced footprint for miniaturization. Si nanowires (SiNWs) can be used in this respect. With the aim of understanding the electrical versus geometrical characteristics of such capacitors, we fabricated and studied a MOS capacitor with highly ordered arrays of vertical Si nanowires of different lengths and thermal silicon oxide dielectric, in comparison to similar flat MOS capacitors. The high homogeneity and ordering of the SiNWs allowed the determination of the single SiNW capacitance and intrinsic series resistance, as well as other electrical characteristics (density of interface states, flat-band voltage and leakage current) in relation to the geometrical characteristics of the SiNWs. The SiNW capacitors demonstrated increased capacitance density compared to the flat case, while maintaining a cutoff frequency above 1 MHz, much higher than in other reports in the literature. Finally, our model system has been shown to constitute an excellent platform for the study of SiNW capacitors with either grown or deposited dielectrics, as for example high-k dielectrics for further increasing the capacitance density. This will be the subject of future work.

  20. Synthesis of ZnO nanowire arrays on ZnO−TiO{sub 2} mixed oxide seed layer for dye sensitized solar cell applications

    Marimuthu, T. [Advanced Materials and Thin Film Physics Lab, Department of Physics, Alagappa University, Karaikudi (India); Anandhan, N., E-mail: anandhan_kn@rediffmail.com [Advanced Materials and Thin Film Physics Lab, Department of Physics, Alagappa University, Karaikudi (India); Thangamuthu, R. [Electrochemical Materials Science Division, CSIR-Central Electrochemical Research Institute, Karaikudi (India); Mummoorthi, M. [Advanced Materials and Thin Film Physics Lab, Department of Physics, Alagappa University, Karaikudi (India); Ravi, G. [Photonic Crystal Lab, Department of Physics, Alagappa University, Karaikudi (India)

    2016-08-25

    ZnO nanowire arrays (NWAs) were synthesized on ZnO−TiO{sub 2} mixed oxide seeded FTO conducting glass plate by two-step sol-gel and hydrothermal method, respectively. X-ray diffraction patterns reveal the presence of mixed and hexagonal phases in seed layer and NWAs, respectively. Scanning electron microscope images showed that the FTO glass plate is uniformly covered with grains and a few nanorods in seed layer and dense NWAs are vertically grown on the seed layer. The hexagonal structure and high crystal quality have been confirmed by micro Raman spectra. Photoluminescence spectra also present that NWAs have high crystal quality and less atomic defects. UV spectra indicate that NWAs are absorbed more dye molecules and it has the band gap equal to bulk material. The efficiency of ZnO−TiO{sub 2} mixed oxide seed layer and ZnO NWAs is found to be 0.56 and 0.84% respectively. Electrochemical impedance spectra reveal that NWAs DSSC has high charge transfer recombination resistance than the seed layer DSSC. - Highlights: • ZnO nanowire arrays were synthesized by two-step sol-gel and hydrothermal method. • The crystal structure and crystalline quality of films are confirmed by Raman spectra. • The emission properties of films are investigated by photoluminescence spectra. • ZnO nanowire arrays (NWAs) have higher charge transfer recombination resistance. • The conversion efficiency of the seed layer and NWAs is to be 0.56 and 0.84%.

  1. High performance and durability of order-structured cathode catalyst layer based on TiO_2@PANI core-shell nanowire arrays

    Chen, Ming; Wang, Meng; Yang, Zhaoyi; Wang, Xindong

    2017-01-01

    Highlights: • TiO_2@PANI core-shell nanowire arrays were prepared and applied as catalyst support. • As-prepared Pt-TiO_2@PANI core-shell nanowire arrays were applied as order-structured cathode catalyst layer. • The novel cathode catalyst structure without Nafion"® ionomer enhance the performance and durability of PEMFC. - Abstract: In this paper, an order-structured cathode catalyst layer consisting of Pt-TiO_2@PANI core-shell nanowire arrays that in situ grown on commercial gas diffusion layer (GDL) are prepared and applied to membrane electrode assembly (MEA) of proton exchange membrane fuel cell (PEMFC). In order to prepare the TiO_2@PANI core-shell nanowire arrays with suitable porosity and prominent conductivity, the morphologies of the TiO_2 nanoarray and electrochemical polymerization process of aniline are schematically investigated. The MEA with order-structured cathode catalyst layer is assembled in the single cell to evaluate the electrochemical performance and durability of PEMFC. As a result, the PEMFC with order-structured cathode catalyst layer shows higher peak power density (773.54 mW cm"−"2) than conventional PEMFC (699.30 mW cm"−"2). Electrochemically active surface area (ECSA) and charge transfer impedance (R_c_t) are measured before and after accelerated degradation test (ADT), and the corresponding experimental results indicate the novel cathode structure exhibits a better stability with respect to conventional cathode. The enhanced electrochemical performance and durability toward PEMFC can be ascribed to the order-structured cathode nanoarray structure with high specific surface area increases the utilization of catalyst and reduces the tortuosity of transport pathways, and the synergistic effect between TiO_2@PANI support and Pt nanoparticles promotes the high efficiency of electrochemical reaction and improves the stability of catalyst. This research provides a facile and controllable method to prepare order

  2. High performance and durability of order-structured cathode catalyst layer based on TiO{sub 2}@PANI core-shell nanowire arrays

    Chen, Ming; Wang, Meng; Yang, Zhaoyi [State Key Laboratory of Advanced Metallurgy, University of Science and Technology Beijing, 30 College Road, Beijing 100083 (China); School of Metallurgical and Ecological Engineering, University of Science and Technology Beijing, 30 College Road, Beijing 100083 (China); Wang, Xindong, E-mail: echem@ustb.edu.cn [State Key Laboratory of Advanced Metallurgy, University of Science and Technology Beijing, 30 College Road, Beijing 100083 (China); School of Metallurgical and Ecological Engineering, University of Science and Technology Beijing, 30 College Road, Beijing 100083 (China)

    2017-06-01

    Highlights: • TiO{sub 2}@PANI core-shell nanowire arrays were prepared and applied as catalyst support. • As-prepared Pt-TiO{sub 2}@PANI core-shell nanowire arrays were applied as order-structured cathode catalyst layer. • The novel cathode catalyst structure without Nafion{sup ®} ionomer enhance the performance and durability of PEMFC. - Abstract: In this paper, an order-structured cathode catalyst layer consisting of Pt-TiO{sub 2}@PANI core-shell nanowire arrays that in situ grown on commercial gas diffusion layer (GDL) are prepared and applied to membrane electrode assembly (MEA) of proton exchange membrane fuel cell (PEMFC). In order to prepare the TiO{sub 2}@PANI core-shell nanowire arrays with suitable porosity and prominent conductivity, the morphologies of the TiO{sub 2} nanoarray and electrochemical polymerization process of aniline are schematically investigated. The MEA with order-structured cathode catalyst layer is assembled in the single cell to evaluate the electrochemical performance and durability of PEMFC. As a result, the PEMFC with order-structured cathode catalyst layer shows higher peak power density (773.54 mW cm{sup −2}) than conventional PEMFC (699.30 mW cm{sup −2}). Electrochemically active surface area (ECSA) and charge transfer impedance (R{sub ct}) are measured before and after accelerated degradation test (ADT), and the corresponding experimental results indicate the novel cathode structure exhibits a better stability with respect to conventional cathode. The enhanced electrochemical performance and durability toward PEMFC can be ascribed to the order-structured cathode nanoarray structure with high specific surface area increases the utilization of catalyst and reduces the tortuosity of transport pathways, and the synergistic effect between TiO{sub 2}@PANI support and Pt nanoparticles promotes the high efficiency of electrochemical reaction and improves the stability of catalyst. This research provides a facile and

  3. Room-temperature InP/InAsP Quantum Discs-in-Nanowire Infrared Photodetectors.

    Karimi, Mohammad; Jain, Vishal; Heurlin, Magnus; Nowzari, Ali; Hussain, Laiq; Lindgren, David; Stehr, Jan Eric; Buyanova, Irina A; Gustafsson, Anders; Samuelson, Lars; Borgström, Magnus T; Pettersson, Håkan

    2017-06-14

    The possibility to engineer nanowire heterostructures with large bandgap variations is particularly interesting for technologically important broadband photodetector applications. Here we report on a combined study of design, fabrication, and optoelectronic properties of infrared photodetectors comprising four million n + -i-n + InP nanowires periodically ordered in arrays. The nanowires were grown by metal-organic vapor phase epitaxy on InP substrates, with either a single or 20 InAsP quantum discs embedded in the i-segment. By Zn compensation of the residual n-dopants in the i-segment, the room-temperature dark current is strongly suppressed to a level of pA/NW at 1 V bias. The low dark current is manifested in the spectrally resolved photocurrent measurements, which reveal strong photocurrent contributions from the InAsP quantum discs at room temperature with a threshold wavelength of about 2.0 μm and a bias-tunable responsivity reaching 7 A/W@1.38 μm at 2 V bias. Two different processing schemes were implemented to study the effects of radial self-gating in the nanowires induced by the nanowire/SiO x /ITO wrap-gate geometry. Summarized, our results show that properly designed axial InP/InAsP nanowire heterostructures are promising candidates for broadband photodetectors.

  4. Nanowire NMOS Logic Inverter Characterization.

    Hashim, Yasir

    2016-06-01

    This study is the first to demonstrate characteristics optimization of nanowire N-Channel Metal Oxide Semiconductor (NW-MOS) logic inverter. Noise margins and inflection voltage of transfer characteristics are used as limiting factors in this optimization. A computer-based model used to produce static characteristics of NW-NMOS logic inverter. In this research two circuit configuration of NW-NMOS inverter was studied, in first NW-NMOS circuit, the noise margin for (low input-high output) condition was very low. For second NMOS circuit gives excellent noise margins, and results indicate that optimization depends on applied voltage to the inverter. Increasing gate to source voltage with (2/1) nanowires ratio results better noise margins. Increasing of applied DC load transistor voltage tends to increasing in decreasing noise margins; decreasing this voltage will improve noise margins significantly.

  5. Ab initio vibrations in nonequilibrium nanowires

    Jauho, Antti-Pekka; Engelund, Mads; Markussen, T

    2010-01-01

    We review recent results on electronic and thermal transport in two different quasi one-dimensional systems: Silicon nanowires (SiNW) and atomic gold chains. For SiNW's we compute the ballistic electronic and thermal transport properties on equal footing, allowing us to make quantitative predicti...

  6. Silicon Nanowire Field-effect Chemical Sensor

    Chen, S.

    2011-01-01

    This thesis describes the work that has been done on the project “Design and optimization of silicon nanowire for chemical sensing‿, including Si-NW fabrication, electrical/electrochemical modeling, the application as ISFET, and the build-up of Si- NW/LOC system for automatic sample delivery. A

  7. Co{sub 3}O{sub 4} nanowire rate at MnO{sub 2} ultrathin nanosheet core/shell arrays: a new class of high-performance pseudocapacitive materials

    Liu, Jinping [Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371 (Singapore); Institute of Nanoscience and Nanotechnology, Department of Physics, Huazhong Normal University, Wuhan 430079, Hubei (China); Jiang, Jian [Institute of Nanoscience and Nanotechnology, Department of Physics, Huazhong Normal University, Wuhan 430079, Hubei (China); Cheng, Chuanwei; Li, Hongxing; Fan, Hong Jin [Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371 (Singapore); Zhang, Jixuan; Gong, Hao [Department of Materials Science and Engineering, National University of Singapore, Singapore 117576 (Singapore)

    2011-05-10

    A smart hybrid nanowire array consisting of Co{sub 3}O{sub 4} porous nanowire core and a MnO{sub 2} ultrathin nanosheet shell is fabricated using a general 3D interfacial carbon-assisted hydrothermal method. The array exhibits a high capacitance with good cycle performance and remarkable rate capability that is ranging among the best reported to date for hybrid metal oxide systems in the absence of a conducting matrix. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  8. Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate

    2010-01-01

    We report on the molecular beam epitaxy growth of Au-assisted GaAs p-type-doped NW arrays on the n-type GaAs(111)B substrate and their photovoltaic properties. The samples are grown at different substrate temperature within the range from 520 to 580 °C. It is shown that the dependence of conversion efficiency on the substrate temperature has a maximum at the substrate temperature of 550 °C. For the best sample, the conversion efficiency of 1.65% and the fill factor of 25% are obtained. PMID:20672038

  9. A p-silicon nanowire/n-ZnO thin film heterojunction diode prepared by thermal evaporation

    Hazra, Purnima; Jit, S.

    2014-01-01

    This paper represents the electrical and optical characteristics of a SiNW/ZnO heterojunction diode and subsequent studies on the photodetection properties of the diode in the ultraviolet (UV) wavelength region. In this work, silicon nanowire arrays were prepared on p-type (100)-oriented Si substrate by an electroless metal deposition and etching method with the help of ultrasonication. After that, catalyst-free deposition of zinc oxide (ZnO) nanowires on a silicon nanowire (SiNW) array substrate was done by utilizing a simple and cost-effective thermal evaporation technique without using a buffer layer. The SEM and XRD techniques are used to show the quality of the as-grown ZnO nanowire film. The junction properties of the diode are evaluated by measuring current—voltage and capacitance—voltage characteristics. The diode has a well-defined rectifying behavior with a rectification ratio of 190 at ±2 V, turn-on voltage of 0.5 V, and barrier height is 0.727 eV at room temperature under dark conditions. The photodetection parameters of the diode are investigated in the bias voltage range of ±2 V. The diode shows responsivity of 0.8 A/W at a bias voltage of 2 V under UV illumination (wavelength = 365 nm). The characteristics of the device indicate that it can be used for UV detection applications in nano-optoelectronic and photonic devices. (semiconductor devices)

  10. Functionalization of silicon nanowires by conductive and non-conductive polymers

    Belhousse, S.; Tighilt, F.-Z.; Sam, S.; Lasmi, K.; Hamdani, K.; Tahanout, L.; Megherbi, F.; Gabouze, N.

    2017-11-01

    The work reports on the development of hybrid devices based on silicon nanowires (SiNW) with polymers and the difference obtained when using conductive and non-conductive polymers. SiNW have attracted much attention due to their importance in understanding the fundamental properties at low dimensionality as well as their potential application in nanoscale devices as in field effect transistors, chemical or biological sensors, battery electrodes and photovoltaics. SiNW arrays were formed using metal assisted chemical etching method. This process is simple, fast and allows obtaining a wide range of silicon nanostructures. Hydrogen-passivated SiNW surfaces show relatively poor stability. Surface modification with organic species confers the desired stability and enhances the surface properties. For this reason, this work proposes a covalent grafting of organic material onto SiNW surface. We have chosen a non-conductive polymer polyvinylpyrrolidone (PVP) and conductive polymers polythiophene (PTh) and polypyrrole (PPy), in order to evaluate the electric effect of the polymers on the obtained materials. The hybrid structures were elaborated by the polymerization of the corresponding conjugated monomers by electrochemical route; this electropolymerization offers several advantages such as simplicity and rapidity. SiNW functionalization by conductive polymers has shown to have a huge effect on the electrical mobility. Hybrid surface morphologies were characterized by scanning electron microscopy (SEM), infrared spectroscopy (FTIR-ATR) and contact angle measurements.

  11. Growth and Transfer of Monolithic Horizontal ZnO Nanowire Superstructures onto Flexible Substrates

    Xu, Sheng

    2010-04-28

    A method of fabricating horizontally aligned ZnO nanowire (NW) arrays with full control over the width and length is demonstrated. A cross-sectional view of the NWs by transmission electron microscopy shows a "mushroom-like" structure. Novel monolithic multisegment superstructures are fabricated by making use of the lateral overgrowth. Ultralong horizontal ZnO NWs of an aspect ratio on the order often thousand are also demonstrated. These horizontal NWs are lifted off and transferred onto a flexible polymer substrate, which may have many great applications in horizontal ZnO NW-based nanosensor arrays, light-emitting diodes, optical gratings, integrated circuit interconnects, and high-output-power alternating-current nanogenerators. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA.

  12. Fabrication of a Miniaturized ZnO Nanowire Accelerometer and Its Performance Tests

    Hyun Chan Kim

    2016-09-01

    Full Text Available This paper reports a miniaturized piezoelectric accelerometer suitable for a small haptic actuator array. The accelerometer is made with zinc oxide (ZnO nanowire (NW grown on a copper wafer by a hydrothermal process. The size of the accelerometer is 1.5 × 1.5 mm2, thus fitting the 1.8 × 1.8 mm2 haptic actuator array cell. The detailed fabrication process of the miniaturized accelerometer is illustrated. Performance evaluation of the fabricated accelerometer is conducted by comparing it with a commercial piezoelectric accelerometer. The output current of the fabricated accelerometer increases linearly with the acceleration. The miniaturized ZnO NW accelerometer is feasible for acceleration measurement of small and lightweight devices.

  13. Piezo-phototronic Effect Enhanced UV/Visible Photodetector Based on Fully Wide Band Gap Type-II ZnO/ZnS Core/Shell Nanowire Array.

    Rai, Satish C; Wang, Kai; Ding, Yong; Marmon, Jason K; Bhatt, Manish; Zhang, Yong; Zhou, Weilie; Wang, Zhong Lin

    2015-06-23

    A high-performance broad band UV/visible photodetector has been successfully fabricated on a fully wide bandgap ZnO/ZnS type-II heterojunction core/shell nanowire array. The device can detect photons with energies significantly smaller (2.2 eV) than the band gap of ZnO (3.2 eV) and ZnS (3.7 eV), which is mainly attributed to spatially indirect type-II transition facilitated by the abrupt interface between the ZnO core and ZnS shell. The performance of the device was further enhanced through the piezo-phototronic effect induced lowering of the barrier height to allow charge carrier transport across the ZnO/ZnS interface, resulting in three orders of relative responsivity change measured at three different excitation wavelengths (385, 465, and 520 nm). This work demonstrates a prototype UV/visible photodetector based on the truly wide band gap semiconducting 3D core/shell nanowire array with enhanced performance through the piezo-phototronic effect.

  14. Self-Powered Solar-Blind Photodetector with Fast Response Based on Au/β-Ga2O3 Nanowires Array Film Schottky Junction.

    Chen, Xing; Liu, Kewei; Zhang, Zhenzhong; Wang, Chunrui; Li, Binghui; Zhao, Haifeng; Zhao, Dongxu; Shen, Dezhen

    2016-02-17

    Because of the direct band gap of 4.9 eV, β-Ga2O3 has been considered as an ideal material for solar-blind photodetection without any bandgap tuning. Practical applications of the photodetectors require fast response speed, high signal-to-noise ratio, low energy consumption and low fabrication cost. Unfortunately, most reported β-Ga2O3-based photodetectors usually possess a relatively long response time. In addition, the β-Ga2O3 photodetectors based on bulk, the individual 1D nanostructure, and the film often suffer from the high cost, the low repeatability, and the relatively large dark current, respectively. In this paper, a Au/β-Ga2O3 nanowires array film vertical Schottky photodiode is successfully fabricated by a simple thermal partial oxidation process. The device exhibits a very low dark current of 10 pA at -30 V with a sharp cutoff at 270 nm. More interestingly, the 90-10% decay time of our device is only around 64 μs, which is much quicker than any other previously reported β-Ga2O3-based photodetectors. Besides, the self-powering, the excellent stability and the good reproducibility of Au/β-Ga2O3 nanowires array film photodetector are helpful to its commercialization and practical applications.

  15. Modification of polypyrrole nanowires array with platinum nanoparticles and glucose oxidase for fabrication of a novel glucose biosensor

    Xu Guangqing [NanoScience and Sensor Technology Research Group, School of Applied Sciences and Engineering, Monash University, Churchill, Victoria 3842 (Australia); School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009 (China); Adeloju, Samuel B., E-mail: Sam.Adeloju@monash.edu [NanoScience and Sensor Technology Research Group, School of Applied Sciences and Engineering, Monash University, Churchill, Victoria 3842 (Australia); Wu Yucheng [School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009 (China); Zhang Xinyi [NanoScience and Sensor Technology Research Group, School of Applied Sciences and Engineering, Monash University, Churchill, Victoria 3842 (Australia)

    2012-11-28

    Highlights: Black-Right-Pointing-Pointer Fabrication of well aligned PPyNWA of 20 nm diameter within AAO template. Black-Right-Pointing-Pointer Improvement of electrochemical properties by decoration with PtNPs. Black-Right-Pointing-Pointer Sensitive amperometric and potentiometric detection of glucose by adsorption of GOx on PPyNWA-PtNPs. Black-Right-Pointing-Pointer Detection of as little as 5.6 {mu}M glucose with potentiometric detection. Black-Right-Pointing-Pointer Comparable or better detection limit and sensitivity than some glucose biosensors fabricated with nanomaterials. - Abstract: A novel glucose biosensor, based on the modification of well-aligned polypyrrole nanowires array (PPyNWA) with Pt nanoparticles (PtNPs) and subsequent surface adsorption of glucose oxidase (GOx), is described. The distinct differences in the electrochemical properties of PPyNWA-GOx, PPyNWA-PtNPs, and PPyNWA-PtNPs-GOx electrodes were revealed by cyclic voltammetry. In particular, the results obtained for PPyNWA-PtNPs-GOx biosensor showed evidence of direct electron transfer due mainly to modification with PtNPs. Optimum fabrication of the PPyNWA-PtNPs-GOx biosensor for both potentiometric and amperometric detection of glucose were achieved with 0.2 M pyrrole, applied current density of 0.1 mA cm{sup -2}, polymerization time of 600 s, cyclic deposition of PtNPs from -200 mV to 200 mV, scan rate of 50 mV s{sup -1}, and 20 cycles. A sensitivity of 40.5 mV/decade and a linear range of 10 {mu}M to 1000 {mu}M (R{sup 2} = 0.9936) were achieved for potentiometric detection, while for amperometric detection a sensitivity of 34.7 {mu}A cm{sup -2} mM{sup -1} at an applied potential of 700 mV and a linear range of 0.1-9 mM (R{sup 2} = 0.9977) were achieved. In terms of achievable detection limit, potentiometric detection achieved 5.6 {mu}M of glucose, while amperometric detection achieved 27.7 {mu}M.

  16. Modification of polypyrrole nanowires array with platinum nanoparticles and glucose oxidase for fabrication of a novel glucose biosensor

    Xu Guangqing; Adeloju, Samuel B.; Wu Yucheng; Zhang Xinyi

    2012-01-01

    Highlights: ► Fabrication of well aligned PPyNWA of 20 nm diameter within AAO template. ► Improvement of electrochemical properties by decoration with PtNPs. ► Sensitive amperometric and potentiometric detection of glucose by adsorption of GOx on PPyNWA–PtNPs. ► Detection of as little as 5.6 μM glucose with potentiometric detection. ► Comparable or better detection limit and sensitivity than some glucose biosensors fabricated with nanomaterials. - Abstract: A novel glucose biosensor, based on the modification of well-aligned polypyrrole nanowires array (PPyNWA) with Pt nanoparticles (PtNPs) and subsequent surface adsorption of glucose oxidase (GOx), is described. The distinct differences in the electrochemical properties of PPyNWA–GOx, PPyNWA–PtNPs, and PPyNWA–PtNPs–GOx electrodes were revealed by cyclic voltammetry. In particular, the results obtained for PPyNWA–PtNPs–GOx biosensor showed evidence of direct electron transfer due mainly to modification with PtNPs. Optimum fabrication of the PPyNWA–PtNPs–GOx biosensor for both potentiometric and amperometric detection of glucose were achieved with 0.2 M pyrrole, applied current density of 0.1 mA cm −2 , polymerization time of 600 s, cyclic deposition of PtNPs from −200 mV to 200 mV, scan rate of 50 mV s −1 , and 20 cycles. A sensitivity of 40.5 mV/decade and a linear range of 10 μM to 1000 μM (R 2 = 0.9936) were achieved for potentiometric detection, while for amperometric detection a sensitivity of 34.7 μA cm −2 mM −1 at an applied potential of 700 mV and a linear range of 0.1–9 mM (R 2 = 0.9977) were achieved. In terms of achievable detection limit, potentiometric detection achieved 5.6 μM of glucose, while amperometric detection achieved 27.7 μM.

  17. Tailoring Thermal Radiative Properties with Doped-Silicon Nanowires

    Zhang, Zhuomin [Georgia Inst. of Technology, Atlanta, GA (United States)

    2017-08-28

    Aligned doped-silicon nanowire (D-SiNW) arrays form a hyperbolic metamaterial in the mid-infrared and have unique thermal radiative properties, such as broadband omnidirectional absorption, low-loss negative refraction, etc. A combined theoretical and experimental investigation will be performed to characterize D-SiNW arrays and other metamaterials for tailoring thermal radiative properties. Near-field thermal radiation between anisotropic materials with hyperbolic dispersions will also be predicted for potential application in energy harvesting. A new kind of anisotropic metamaterial with a hyperbolic dispersion in a broad infrared region has been proposed and demonstrated based on aligned doped-silicon nanowire (D-SiNW) arrays. D-SiNW-based metamaterials have unique thermal radiative properties, such as broadband omnidirectional absorption whose width and location can be tuned by varying the filling ratio and/or doping level. Furthermore, high figure of merit (FOM) can be achieved in a wide spectral region, suggesting that D-SiNW arrays may be used as a negative refraction material with much less loss than other structured materials, such as layered semiconductor materials. We have also shown that D-SiNWs and other nanostructures can significantly enhance near-field thermal radiation. The study of near-field radiative heat transfer between closely spaced objects and the electromagnetic wave interactions with micro/nanostructured materials has become an emerging multidisciplinary field due to its importance in advanced energy systems, manufacturing, local thermal management, and high spatial resolution thermal sensing and mapping. We have performed extensive study on the energy streamlines involving anisotropic metamaterials and the applicability of the effective medium theory for near-field thermal radiation. Graphene as a 2D material has attracted great attention in nanoelectronics, plasmonics, and energy harvesting. We have shown that graphene can be used to

  18. High magnetic field matching effects in NbN films induced by template grown dense ferromagnetic nanowires arrays

    Hallet, X.; Mátéfi-Tempfli, Mária; Michotte, S.

    2009-01-01

    magnetic nanowires. Matching effects have been observed up to 2.5 T (11th matching field) and are maintained at low temperature. An appreciable enhancement of the superconducting properties is observed. At low fields, a hysteretic behavior in the magnetoresistance is found, directly related...

  19. Spectrally selective solar absorber with sharp and temperature dependent cut-off based on semiconductor nanowire arrays

    Wang, Yang; Zhou, Lin; Zheng, Qinghui; Lu, Hong; Gan, Qiaoqiang; Yu, Zongfu; Zhu, Jia

    2017-05-01

    Spectrally selective absorbers (SSA) with high selectivity of absorption and sharp cut-off between high absorptivity and low emissivity are critical for efficient solar energy conversion. Here, we report the semiconductor nanowire enabled SSA with not only high absorption selectivity but also temperature dependent sharp absorption cut-off. By taking advantage of the temperature dependent bandgap of semiconductors, we systematically demonstrate that the absorption cut-off profile of the semiconductor-nanowire-based SSA can be flexibly tuned, which is quite different from most of the other SSA reported so far. As an example, silicon nanowire based selective absorbers are fabricated, with the measured absorption efficiency above (below) bandgap ˜97% (15%) combined with an extremely sharp absorption cut-off (transition region ˜200 nm), the sharpest SSA demonstrated so far. The demonstrated semiconductor-nanowire-based SSA can enable a high solar thermal efficiency of ≳86% under a wide range of operating conditions, which would be competitive candidates for the concentrated solar energy utilizations.

  20. Synthesis of ZnTe nanowires onto TiO2 nanotubular arrays by pulse-reverse electrodeposition

    Gandhi, T.; Raja, K.S.; Misra, M.

    2009-01-01

    Growth of ZnTe nanowires using a pulse-reverse electrodeposition technique from a non-aqueous solution is reported. ZnTe nanowires were grown on to an ordered nanotubular TiO 2 template in a propylene carbonate solution at 130 o C inside a controlled atmosphere glove box. The pulse-reverse electro deposition process consisted of a cathodic pulse at - 0.62 V and an anodic pulse at 0.75 V Vs Zn 2+ /Zn. Stoichiometry growth of crystalline ZnTe nanowires was observed in the as-deposited condition. The anodic pulse cycle of the pulse-reverse electrodeposition process presumably introduced zinc vacancies as deep level acceptors at an energy level of E v + 0.47 eV. The resultant ZnTe nanowires showed p-type semiconductivity with a resistivity of 7.8 x 10 4 Ω cm and a charge carrier density of 1.67 x 10 14 cm -3 . Annihilation of the defects occurred upon thermal annealing that resulted in marginal decrease in the defect density.

  1. Large-area perovskite nanowire arrays fabricated by large-scale roll-to-roll micro-gravure printing and doctor blading

    Hu, Qiao; Wu, Han; Sun, Jia; Yan, Donghang; Gao, Yongli; Yang, Junliang

    2016-02-01

    Organic-inorganic hybrid halide perovskite nanowires (PNWs) show great potential applications in electronic and optoelectronic devices such as solar cells, field-effect transistors and photodetectors. It is very meaningful to fabricate ordered, large-area PNW arrays and greatly accelerate their applications and commercialization in electronic and optoelectronic devices. Herein, highly oriented and ultra-long methylammonium lead iodide (CH3NH3PbI3) PNW array thin films were fabricated by large-scale roll-to-roll (R2R) micro-gravure printing and doctor blading in ambient environments (humility ~45%, temperature ~28 °C), which produced PNW lengths as long as 15 mm. Furthermore, photodetectors based on these PNWs were successfully fabricated on both silicon oxide (SiO2) and flexible polyethylene terephthalate (PET) substrates and showed moderate performance. This study provides low-cost, large-scale techniques to fabricate large-area PNW arrays with great potential applications in flexible electronic and optoelectronic devices.Organic-inorganic hybrid halide perovskite nanowires (PNWs) show great potential applications in electronic and optoelectronic devices such as solar cells, field-effect transistors and photodetectors. It is very meaningful to fabricate ordered, large-area PNW arrays and greatly accelerate their applications and commercialization in electronic and optoelectronic devices. Herein, highly oriented and ultra-long methylammonium lead iodide (CH3NH3PbI3) PNW array thin films were fabricated by large-scale roll-to-roll (R2R) micro-gravure printing and doctor blading in ambient environments (humility ~45%, temperature ~28 °C), which produced PNW lengths as long as 15 mm. Furthermore, photodetectors based on these PNWs were successfully fabricated on both silicon oxide (SiO2) and flexible polyethylene terephthalate (PET) substrates and showed moderate performance. This study provides low-cost, large-scale techniques to fabricate large-area PNW arrays

  2. Silicon nanowire hybrid photovoltaics

    Garnett, Erik C.; Peters, Craig; Brongersma, Mark; Cui, Yi; McGehee, Mike

    2010-01-01

    Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

  3. Silicon nanowire hybrid photovoltaics

    Garnett, Erik C.

    2010-06-01

    Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

  4. Rational Synthesis of Branched CoMoO4@CoNiO2 Core/Shell Nanowire Arrays for All-Solid-State Supercapacitors with Improved Performance.

    Ai, Yuanfei; Geng, Xuewen; Lou, Zheng; Wang, Zhiming M; Shen, Guozhen

    2015-11-04

    Effectively composite materials with optimized structures exhibited promising potential in continuing improving the electrochemical performances of supercapacitors in the past few years. Here, we proposed a rational design of branched CoMoO4@CoNiO2 core/shell nanowire arrays on Ni foam by two steps of hydrothermal processing. Owing to the high activity of the scaffold-like CoMoO4 nanowires and the well-defined CoNiO2 nanoneedles, the three-dimensional (3D) electrode architectures achieved remarkable electrochemical performances with high areal specific capacitance (5.31 F/cm(2) at 5 mA/cm(2)) and superior cycling stability(159% of the original specific capacitance, i.e., 95.7% of the maximum retained after 5000 cycles at 30 mA/cm(2)). The all-solid-state asymmetric supercapacitors composed of such electrode and activated carbon (AC) exhibited an areal specific capacitance of 1.54 F/cm(2) at 10 mA/cm(2) and a rate capability (59.75 Wh/kg at a 1464 W/kg) comparable with Li-ion batteries. It also showed an excellent cycling stability with no capacitance attenuation after 50000 cycles at 100 mA/cm(2). After rapid charging (1 s), such supercapacitors in series could lighten a red LED for a long time and drive a mini motor effectively, demonstrating advances in energy storage, scalable integrated applications, and promising commercial potential.

  5. Interactions between semiconductor nanowires and living cells.

    Prinz, Christelle N

    2015-06-17

    Semiconductor nanowires are increasingly used for biological applications and their small dimensions make them a promising tool for sensing and manipulating cells with minimal perturbation. In order to interface cells with nanowires in a controlled fashion, it is essential to understand the interactions between nanowires and living cells. The present paper reviews current progress in the understanding of these interactions, with knowledge gathered from studies where living cells were interfaced with vertical nanowire arrays. The effect of nanowires on cells is reported in terms of viability, cell-nanowire interface morphology, cell behavior, changes in gene expression as well as cellular stress markers. Unexplored issues and unanswered questions are discussed.

  6. Micromagnetic simulations of cylindrical magnetic nanowires

    Ivanov, Yurii P.

    2015-05-27

    This chapter reviews micromagnetic simulations of cylindrical magnetic nanowires and their ordered arrays. It starts with a description of the theoretical background of micromagnetism. The chapter discusses main magnetization reversal modes, domain wall types, and state diagrams in cylindrical nanowires of different types and sizes. The results of the hysteresis process in individual nanowires and nanowire arrays also are presented. Modeling results are compared with experimental ones. The chapter also discusses future trends in nanowire applications in relation to simulations, such as current-driven dynamics, spintronics, and spincaloritronics. The main micromagnetic programs are presented and discussed, together with the corresponding links.

  7. Electrodeposition of Cu-doped ZnO nanowire arrays and heterojunction formation with p-GaN for color tunable light emitting diode applications

    Lupan, O.; Pauporté, T.; Viana, B.; Aschehoug, P.

    2011-01-01

    Highlights: ► High quality copper-doped zinc oxide nanowires were electrochemically grown at low temperature. ► ZnO:Cu nanowires have been epitaxially grown on Mg-doped p-GaN single-crystalline layers. ► The (ZnO:Cu NWs)/(p-GaN:Mg) heterojunction was used to fabricate a light-emitting diode structure. ► The photo- and electroluminescence emission was red-shifted to the violet spectral region compared to pure ZnO. ► The results are of importance for band-gap engineering of ZnO and for color-tunable LED. - Abstract: Copper-doped zinc oxide (ZnO:Cu) nanowires (NWs) were electrochemically deposited at low temperature on fluor-doped tin oxide (FTO) substrates. The electrochemical behavior of the Cu–Zn system for Cu-doped ZnO electrodeposition was studied and the electrochemical reaction mechanism is discussed. The synthesized ZnO arrayed layers were investigated by using SEM, XRD, EDX, photoluminescence and Raman techniques. X-ray diffraction analysis demonstrates a decrease in the lattice parameters of Cu-doped ZnO NWs. Structural analyses show that the nanomaterial is of hexagonal structure with the Cu incorporated in ZnO NWs probably by substituting zinc in the host lattice. Photoluminescence studies on pure and Cu-doped ZnO NWs shows that the near band edge emission is red-shifted by about 5 or 12 nm depending on Cu(II) concentration in the electrolytic bath solution (3 or 6 μmol l −1 ). Cu-doped ZnO NWs have been also epitaxially grown on Mg doped p-GaN single-crystalline layers and the (ZnO:Cu NWs)/(p-GaN:Mg) heterojunction has been used to fabricate a light-emitting diode (LED) structure. The emission was red-shifted to the visible violet spectral region compared to pure ZnO. The present work demonstrates the ability of electrodeposition to produce high quality ZnO nanowires with tailored optical properties by doping. The obtained results are of great importance for further studies on bandgap engineering of ZnO, for color-tunable LED applications

  8. In-situ magnetization/heating electron holography to study the magnetic ordering in arrays of nickel metallic nanowires

    Eduardo Ortega

    2018-05-01

    Full Text Available Magnetic nanostructures of different size, shape, and composition possess a great potential to improve current technologies like data storage and electromagnetic sensing. In thin ferromagnetic nanowires, their magnetization behavior is dominated by the competition between magnetocrystalline anisotropy (related to the crystalline structure and shape anisotropy. In this way electron diffraction methods like precession electron diffraction (PED can be used to link the magnetic behavior observed by Electron Holography (EH with its crystallinity. Using off-axis electron holography under Lorentz conditions, we can experimentally determine the magnetization distribution over neighboring nanostructures and their diamagnetic matrix. In the case of a single row of nickel nanowires within the alumina template, the thin TEM samples showed a dominant antiferromagnetic arrangement demonstrating long-range magnetostatic interactions playing a major role.

  9. High optical and switching performance electrochromic devices based on a zinc oxide nanowire with poly(methyl methacrylate) gel electrolytes

    Chun, Young Tea; Chu, Daping, E-mail: dpc31@cam.ac.uk [Electrical Engineering Division, Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA (United Kingdom); Neeves, Matthew; Placido, Frank [Thin Film Centre, University of the West of Scotland, Paisley PA1 2BE (United Kingdom); Smithwick, Quinn [Disney Research, 521 Circle Seven Drive, Glendale, Los Angeles, California 91201 (United States)

    2014-11-10

    High performance electrochromic devices have been fabricated and demonstrated utilizing a solid polymer electrolyte and zinc oxide (ZnO) nanowire (NW) array counter electrode. The poly(methyl methacrylate) based polymer electrolyte was spin coated upon hydrothermally grown ZnO NW array counter electrodes, while electron beam evaporated NiO{sub x} thin films formed the working electrodes. Excellent optical contrast and switching speeds were observed in the fabricated devices with active areas of 2 cm{sup 2}, exhibiting an optical contrast of 73.11% at the wavelength of 470 nm, combined with a fast switching time of 0.2 s and 0.4 s for bleaching and coloration, respectively.

  10. High optical and switching performance electrochromic devices based on a zinc oxide nanowire with poly(methyl methacrylate) gel electrolytes

    Chun, Young Tea; Chu, Daping; Neeves, Matthew; Placido, Frank; Smithwick, Quinn

    2014-01-01

    High performance electrochromic devices have been fabricated and demonstrated utilizing a solid polymer electrolyte and zinc oxide (ZnO) nanowire (NW) array counter electrode. The poly(methyl methacrylate) based polymer electrolyte was spin coated upon hydrothermally grown ZnO NW array counter electrodes, while electron beam evaporated NiO x thin films formed the working electrodes. Excellent optical contrast and switching speeds were observed in the fabricated devices with active areas of 2 cm 2 , exhibiting an optical contrast of 73.11% at the wavelength of 470 nm, combined with a fast switching time of 0.2 s and 0.4 s for bleaching and coloration, respectively

  11. Importance of the Debye screening length on nanowire field effect transistor sensors.

    Stern, Eric; Wagner, Robin; Sigworth, Fred J; Breaker, Ronald; Fahmy, Tarek M; Reed, Mark A

    2007-11-01

    Nanowire field effect transistors (NW-FETs) can serve as ultrasensitive detectors for label-free reagents. The NW-FET sensing mechanism assumes a controlled modification in the local channel electric field created by the binding of charged molecules to the nanowire surface. Careful control of the solution Debye length is critical for unambiguous selective detection of macromolecules. Here we show the appropriate conditions under which the selective binding of macromolecules is accurately sensed with NW-FET sensors.

  12. Ag-bridged Ag{sub 2}O nanowire network/TiO{sub 2} nanotube array p–n heterojunction as a highly efficient and stable visible light photocatalyst

    Liu, Chengbin, E-mail: chem_cbliu@hnu.edu.cn [Key Laboratory of Jiangxi Province for Persistent Pollutants Control and Resources Recycle, Nanchang Hangkong University, Nanchang 330063 (China); State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha 410082 (China); Cao, Chenghao [State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha 410082 (China); Luo, Xubiao [Key Laboratory of Jiangxi Province for Persistent Pollutants Control and Resources Recycle, Nanchang Hangkong University, Nanchang 330063 (China); Luo, Shenglian [Key Laboratory of Jiangxi Province for Persistent Pollutants Control and Resources Recycle, Nanchang Hangkong University, Nanchang 330063 (China); State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha 410082 (China)

    2015-03-21

    Graphical abstract: A unique Ag-bridged Ag{sub 2}O nanowire network/TiO{sub 2} nanotube array p–n heterojunction was fabricated by simple electrochemical method. The heterostructures exhibit high photocatalytic activity and excellent recycling performance. - Highlights: • Ag-bridged Ag{sub 2}O nanowire network self-stability structure. • Ag{sub 2}O nanowire network/TiO{sub 2} nanotube p–n heterojunction. • High visible light photocatalytic activity. • Highly stable recycling performance. - Abstract: A unique Ag-bridged Ag{sub 2}O nanowire network/TiO{sub 2} nanotube array p–n heterojunction (Ag–Ag{sub 2}O/TiO{sub 2} NT) was fabricated by simple electrochemical method. Ag nanoparticles were firstly electrochemically deposited onto the surface of TiO{sub 2} NT and then were partly oxidized to Ag{sub 2}O nanowires while the rest of Ag mother nanoparticles were located at the junctions of Ag{sub 2}O nanowire network. The Ag–Ag{sub 2}O/TiO{sub 2} NT heterostructure exhibited strong visible-light response, effective separation of photogenerated carriers, and high adsorption capacity. The integration of Ag–Ag{sub 2}O self-stability structure and p–n heterojunction permitted high and stable photocatalytic activity of Ag–Ag{sub 2}O/TiO{sub 2} NT heterostructure photocatalyst. Under 140-min visible light irradiation, the photocatalytic removal efficiency of both dye acid orange 7 (AO7) and industrial chemical p-nitrophenol (PNP) over Ag–Ag{sub 2}O/TiO{sub 2} NT reached nearly 100% much higher than 17% for AO7 or 13% for PNP over bare TiO{sub 2} NT. After 5 successive cycles under 600-min simulated solar light irradiation, Ag–Ag{sub 2}O/TiO{sub 2} NT remained highly stable photocatalytic activity.

  13. Hierarchical Ni0.54Co0.46O2 nanowire and nanosheet arrays grown on carbon fiber cloth for high-performance supercapacitors

    Jiang, Yuanzhi; Zhang, Lijuan; Zhang, Hang; Zhang, Cui; Liu, Shuangxi

    2016-10-01

    Hierarchical Ni0.54Co0.46O2 architectures composed by nanowires or nanosheets were successfully grown on bio-mass carbon fiber cloth (CFC) by hydrothermal method. The morphology of Ni0.54Co0.46O2 can be effectively controlled by using different precipitators. The structural effects of the two kinds of morphologies were researched. the results suggest that the Ni0.54Co0.46O2 nanosheet arrays grown on CFC (NCO-NSs/CFC) shows a higher Faradaic areal capacity of 438 μAh cm-2 (238.1 mAh g-1) at a current density of 1 mA cm-2 and still about 90.3% initial capacity retention even at the high current density of 50 mA cm-2. Moreover, an all-solid-state flexible symmetric supercapacitor device has been successfully assembled. The optimized device delivers superior electrochemical performance with an outstanding energy density of 92.4 Wh kg-1 at a power density of 207.2 W kg-1. Such hierarchical nanostructure composed by well-aligned uniform Ni0.54Co0.46O2 nanosheet arrays grown on bio-mass carbon fiber cloth might hold great promise as battery-type electrode material for high-performance supercapacitor.

  14. CdS/CdSe quantum dot shell decorated vertical ZnO nanowire arrays by spin-coating-based SILAR for photoelectrochemical cells and quantum-dot-sensitized solar cells.

    Zhang, Ran; Luo, Qiu-Ping; Chen, Hong-Yan; Yu, Xiao-Yun; Kuang, Dai-Bin; Su, Cheng-Yong

    2012-04-23

    A CdS/CdSe composite shell is assembled onto the surface of ZnO nanowire arrays with a simple spin-coating-based successive ionic layer adsorption and reaction method. The as-prepared photoelectrode exhibit a high photocurrent density in photoelectrochemical cells and also generates good power conversion efficiency in quantum-dot-sensitized solar cells. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Electrochemically grown rough-textured nanowires

    Tyagi, Pawan; Postetter, David; Saragnese, Daniel; Papadakis, Stergios J.; Gracias, David H.

    2010-01-01

    Nanowires with a rough surface texture show unusual electronic, optical, and chemical properties; however, there are only a few existing methods for producing these nanowires. Here, we describe two methods for growing both free standing and lithographically patterned gold (Au) nanowires with a rough surface texture. The first strategy is based on the deposition of nanowires from a silver (Ag)-Au plating solution mixture that precipitates an Ag-Au cyanide complex during electrodeposition at low current densities. This complex disperses in the plating solution, thereby altering the nanowire growth to yield a rough surface texture. These nanowires are mass produced in alumina membranes. The second strategy produces long and rough Au nanowires on lithographically patternable nickel edge templates with corrugations formed by partial etching. These rough nanowires can be easily arrayed and integrated with microscale devices.

  16. Enhanced photovoltaic performance of fully flexible dye-sensitized solar cells based on the Nb{sub 2}O{sub 5} coated hierarchical TiO{sub 2} nanowire-nanosheet arrays

    Liu, Wenwu; Hong, Chengxun; Wang, Hui-gang; Zhang, Mei; Guo, Min, E-mail: guomin@ustb.edu.cn

    2016-02-28

    Graphical abstract: Nb{sub 2}O{sub 5} coated hierarchical TiO{sub 2} nanowire-sheet arrays photoanode was synthesized on Ti-mesh substrate by using a hydrothermal approach for fully flexible dye-sensitized solar cells which exhibited well photovoltaic efficiency of 4.55%. - Highlights: • Nb{sub 2}O{sub 5} coated hierarchical TiO{sub 2} nanowire-nanosheet arrays were prepared on Ti-mesh. • Nb{sub 2}O{sub 5} coated TiO{sub 2} HNWAs/Pt-ITO-PEN flexible DSSC was constructed. • The fully flexible DSSC exhibited an enhanced photovoltaic performance of 4.55%. • The reasons for the improved conversion efficiency of the DSSC were discussed. - Abstract: Nb{sub 2}O{sub 5} coated hierarchical TiO{sub 2} nanowire-sheet arrays photoanode was synthesized on flexible Ti-mesh substrate by using a hydrothermal approach. The effect of TiO{sub 2} morphology and Nb{sub 2}O{sub 5} coating layer on the photovoltaic performance of the flexible dye sensitized solar cells (DSSCs) based on Ti-mesh supported nanostructures were systematically investigated. Compared to the TiO{sub 2} nanowire arrays (NWAs), hierarchical TiO{sub 2} nanowire arrays (HNWAs) with enlarged internal surface area and strong light scattering properties exhibited higher overall conversion efficiency. The introduction of thin Nb{sub 2}O{sub 5} coating layers on the surface of the TiO{sub 2} HNWAs played a key role in improving the photovoltaic performance of the flexible DSSC. By separating the TiO{sub 2} and electrolyte (I{sup –}/I{sub 3}{sup –}), the Nb{sub 2}O{sub 5} energy barrier decreased the electron recombination rate and increased electron collection efficiency and injection efficiency, resulting in improved J{sub sc} and V{sub oc}. Furthermore, the influence of Nb{sub 2}O{sub 5} coating amounts on the power conversion efficiency were discussed in detail. The fully flexible DSSC based on Nb{sub 2}O{sub 5} coated TiO{sub 2} HNWAs films with a thickness of 14 μm displayed a well photovoltaic property

  17. High-Performance GaAs Nanowire Solar Cells for Flexible and Transparent Photovoltaics.

    Han, Ning; Yang, Zai-xing; Wang, Fengyun; Dong, Guofa; Yip, SenPo; Liang, Xiaoguang; Hung, Tak Fu; Chen, Yunfa; Ho, Johnny C

    2015-09-16

    Among many available photovoltaic technologies at present, gallium arsenide (GaAs) is one of the recognized leaders for performance and reliability; however, it is still a great challenge to achieve cost-effective GaAs solar cells for smart systems such as transparent and flexible photovoltaics. In this study, highly crystalline long GaAs nanowires (NWs) with minimal crystal defects are synthesized economically by chemical vapor deposition and configured into novel Schottky photovoltaic structures by simply using asymmetric Au-Al contacts. Without any doping profiles such as p-n junction and complicated coaxial junction structures, the single NW Schottky device shows a record high apparent energy conversion efficiency of 16% under air mass 1.5 global illumination by normalizing to the projection area of the NW. The corresponding photovoltaic output can be further enhanced by connecting individual cells in series and in parallel as well as by fabricating NW array solar cells via contact printing showing an overall efficiency of 1.6%. Importantly, these Schottky cells can be easily integrated on the glass and plastic substrates for transparent and flexible photovoltaics, which explicitly demonstrate the outstanding versatility and promising perspective of these GaAs NW Schottky photovoltaics for next-generation smart solar energy harvesting devices.

  18. Double-gated Si NW FET sensors: Low-frequency noise and photoelectric properties

    Gasparyan, F.; Khondkaryan, H.; Arakelyan, A.; Zadorozhnyi, I.; Pud, S.; Vitusevich, S.

    2016-01-01

    The transport, noise, and photosensitivity properties of an array of silicon nanowire (NW) p"+-p-p"+ field-effect transistors (FETs) are investigated. The peculiarities of photosensitivity and detectivity are analyzed over a wide spectrum range. The absorbance of p-Si NW shifts to the short wavelength region compared with bulk Si. The photocurrent and photosensitivity reach increased values in the UV range of the spectrum at 300 K. It is shown that sensitivity values can be tuned by the drain-source voltage and may reach record values of up to 2–4 A/W at a wavelength of 300 nm at room temperature. Low-frequency noise studies allow calculating the photodetectivity values, which increase with decreasing wavelength down to 300 nm. We show that the drain current of Si NW biochemical sensors substantially depends on pH value and the signal-to-noise ratio reaches the high value of 10"5. Increasing pH sensitivity with gate voltage is revealed for certain source-drain currents of pH-sensors based on Si NW FETs. The noise characteristic index decreases from 1.1 to 0.7 with the growth of the liquid gate voltage. Noise behavior is successfully explained in the framework of the correlated number-mobility unified fluctuation model. pH sensitivity increases as a result of the increase in liquid gate voltage, thus giving the opportunity to measure very low proton concentrations in the electrolyte medium at certain values of the liquid gate voltage.

  19. Three-dimensional hierarchical NiCo2O4 nanowire@Ni3S2 nanosheet core/shell arrays for flexible asymmetric supercapacitors

    Liu, Bo; Kong, Dezhi; Huang, Zhi Xiang; Mo, Runwei; Wang, Ye; Han, Zhaojun; Cheng, Chuanwei; Yang, Hui Ying

    2016-05-01

    Three-dimensional (3D) hierarchical NiCo2O4@Ni3S2 core/shell arrays on Ni foam were synthesized by a facile, stepwise synthesis approach. The 3D heterogeneous NiCo2O4 nanostructure forms an interconnected web-like scaffold and serves as the core for the Ni3S2 shell. The as-prepared NiCo2O4@Ni3S2 nanowire array (NWA) electrodes exhibited excellent electrochemical performance, such as high specific areal capacitance and excellent cycling stability. The specific areal capacitance of 3.0 F cm-2 at a current density of 5 mA cm-2 is among the highest values and the only 6.7% capacitance decay after 10 000 cycles demonstrates the excellent cycling stability. A flexible asymmetric supercapacitor (ASC) was fabricated with activated carbon (AC) as the anode and the obtained NiCo2O4@Ni3S2 NWAs as the cathode. The ASC device exhibited a high energy density of 1.89 mW h cm-3 at 5.81 W cm-3 and a high power density of 56.33 W cm-3 at 0.94 mW h cm-3. As a result, the hybrid nanoarchitecture opens a new way to design high performance electrodes for electrochemical energy storage applications.Three-dimensional (3D) hierarchical NiCo2O4@Ni3S2 core/shell arrays on Ni foam were synthesized by a facile, stepwise synthesis approach. The 3D heterogeneous NiCo2O4 nanostructure forms an interconnected web-like scaffold and serves as the core for the Ni3S2 shell. The as-prepared NiCo2O4@Ni3S2 nanowire array (NWA) electrodes exhibited excellent electrochemical performance, such as high specific areal capacitance and excellent cycling stability. The specific areal capacitance of 3.0 F cm-2 at a current density of 5 mA cm-2 is among the highest values and the only 6.7% capacitance decay after 10 000 cycles demonstrates the excellent cycling stability. A flexible asymmetric supercapacitor (ASC) was fabricated with activated carbon (AC) as the anode and the obtained NiCo2O4@Ni3S2 NWAs as the cathode. The ASC device exhibited a high energy density of 1.89 mW h cm-3 at 5.81 W cm-3 and a high power

  20. TiO2-Anatase Nanowire Dispersed Composite Electrode for Dye-Sensitized Solar Cells

    Asagoe, K; Suzuki, Y; Ngamsinlapasathian, S; Yoshikawa, S

    2007-01-01

    TiO 2 anatase nanowires have been prepared by a hydrothermal process followed by post-heat treatment in air. TiO 2 nanoparticle/TiO 2 nanowire composite electrodes were prepared for dye-sensitized solar cells (DSC) in order to improve light-to-electricity conversion efficiency. The TiO 2 NP/TiO 2 NW composite cells showed higher DSC performance than ordinary nanoparticle cells and fully nanowire cells: efficiency (η = 6.53 % for DSC with 10% nanowire, whereas 5.59% for 0% nanowire, and 2.42% for 100% nanowire

  1. Silicon Nanowire Field-effect Chemical Sensor

    Chen, S.

    2011-01-01

    This thesis describes the work that has been done on the project “Design and optimization of silicon nanowire for chemical sensing‿, including Si-NW fabrication, electrical/electrochemical modeling, the application as ISFET, and the build-up of Si- NW/LOC system for automatic sample delivery. A novel top-down fabrication technique was presented for single-crystal Si-NW fabrication realized with conventional microfabrication technique. High quality triangular Si-NWs were made with high wafer-s...

  2. Enhanced cycling stability of NiCo2S4@NiO core-shell nanowire arrays for all-solid-state asymmetric supercapacitors

    Huang, Yuanyuan; Shi, Tielin; Jiang, Shulan; Cheng, Siyi; Tao, Xiangxu; Zhong, Yan; Liao, Guanglan; Tang, Zirong

    2016-12-01

    As a new class of pseudocapacitive material, metal sulfides possess high electrochemical performance. However, their cycling performance as conventional electrodes is rather poor for practical applications. In this article, we report an original composite electrode based on NiCo2S4@NiO core-shell nanowire arrays (NWAs) with enhanced cycling stability. This three-dimensional electrode also has a high specific capacitance of 12.2 F cm-2 at the current density of 1 mA cm-2 and excellent cycling stability (about 89% retention after 10,000 cycles). Moreover, an all-solid-state asymmetric supercapacitor (ASC) device has been assembled with NiCo2S4@NiO NWAs as the positive electrode and active carbon (AC) as the negative electrode, delivering a high energy density of 30.38 W h kg-1 at 0.288 KW kg-1 and good cycling stability (about 109% retention after 5000 cycles). The results show that NiCo2S4@NiO NWAs are promising for high-performance supercapacitors with stable cycling based on the unique core-shell structure and well-designed combinations.

  3. Application of Chemical Doping and Architectural Design Principles To Fabricate Nanowire Co2Ni3ZnO8 Arrays for Aqueous Asymmetric Supercapacitors.

    Liu, Qi; Yang, Bin; Liu, Jingyuan; Yuan, Yi; Zhang, Hongsen; Liu, Lianhe; Wang, Jun; Li, Rumin

    2016-08-10

    Electrode materials derived from transition metal oxides have a serious problem of low electron transfer rate, which restricts their practical application. However, chemically doped graphene transforms the chemical bonding configuration to enhance electron transfer rate and, therefore, facilitates the successful fabrication of Co2Ni3ZnO8 nanowire arrays. In addition, the Co2Ni3ZnO8 electrode materials, considered as Ni and Zn ions doped into Co3O4, have a high electron transfer rate and electrochemical response capability, because the doping increases the degree of crystal defect and reaction of Co/Ni ions with the electrolyte. Hence, the Co2Ni3ZnO8 electrode exhibits a high rate property and excellent electrochemical cycle stability, as determined by electrochemical analysis of the relationship between specific capacitance, IR drop, Coulomb efficiency, and different current densities. From the results of a three-electrode system of electrochemical measurement, the Co2Ni3ZnO8 electrode demonstrates a specific capacitance of 1115 F g(-1) and retains 89.9% capacitance after 2000 cycles at a current density of 4 A g(-1). The energy density of the asymmetric supercapacitor (AC//Co2Ni3ZnO8) is 54.04 W h kg(-1) at the power density of 3200 W kg(-1).

  4. Facile preparation of branched hierarchical ZnO nanowire arrays with enhanced photocatalytic activity: A photodegradation kinetic model

    Ebrahimi, M.; Yousefzadeh, S.; Samadi, M.; Dong, Chunyang; Zhang, Jinlong; Moshfegh, A. Z.

    2018-03-01

    Branched hierarchical zinc oxide nanowires (BH-ZnO NWs) were fabricated successfully by a facile and rapid synthesis using two-step growth process. Initially, ZnO NWs have been prepared by anodizing zinc foil at room temperature and followed by annealing treatment. Then, the BH- ZnO NWs were grown on the ZnO NWs by a solution based method at very low temperature (31 oC). The BH- ZnO NWs with different aspect ratio were obtained by varying reaction time (0.5, 2, 5, 10 h). Photocatalytic activity of the samples was studied under both UV and visible light. The results indicated that the optimized BH-ZnO NWs (5 h) as a photocatalyst exhibited the highest photoactivity with about 3 times higher than the ZnO NWs under UV light. In addition, it was also determined that photodegradation rate constant (k) for the BH- ZnO NWs surface obeys a linear function with the branch length (l) and their correlation was described by using a proposed kinetic model.

  5. In Situ TEM Creation of Nanowire Devices

    Alam, Sardar Bilal

    Integration of silicon nanowires (SiNWs) as active components in devices requires that desired mechanical, thermal and electrical interfaces can be established between the nanoscale geometry of the SiNW and the microscale architecture of the device. In situ transmission electron microscopy (TEM),...

  6. Chemical bath deposition of ZnO nanowire-nanoparticle composite electrodes for use in dye-sensitized solar cells

    Ku, C-H; Wu, J-J [Department of Chemical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China)

    2007-12-19

    ZnO nanowire (NW)-layered basic zinc acetate (LBZA)/ZnO nanoparticle (NP) composite electrodes with different NP occupying extents have been synthesized using a simple wet-chemical route for use in dye-sensitized solar cells (DSSCs). By employing mercurochrome as the sensitizer, superior efficiencies ({eta}) of 1.27-2.37% are obtained using the ZnO NW-LBZA/ZnO NP composite electrodes composed of a 5.5 {mu}m thick NW array with different NP occupying extents in comparison with the ZnO NW DSSC ({eta} = 0.45%). It suggests that the ZnO NW-LBZA/ZnO NP composite films which possess a considerable enlarged surface area by NPs growth, without sacrificing electron transport efficiency of single-crystalline ZnO NWs at the same time, are promising photoanodes for use in DSSCs. In addition to the extent of NP occupation, the overall efficiency of the ZnO NW-LBZA/ZnO NP composite DSSC is also influenced by the thickness of the composite film as well as the LBZA fraction and the cracks within the composite. The fraction of LBZA affected by the NP growth period and post-annealing conditions is found to play a crucial role in electron transport through the composite anode. Up to now, a high efficiency DSSC of 3.2% is achieved using a mercurochrome-sensitized and 6.2 {mu}m thick NW-NP composite film.

  7. High-performance silicon nanowire bipolar phototransistors

    Tan, Siew Li; Zhao, Xingyan; Chen, Kaixiang; Crozier, Kenneth B.; Dan, Yaping

    2016-07-01

    Silicon nanowires (SiNWs) have emerged as sensitive absorbing materials for photodetection at wavelengths ranging from ultraviolet (UV) to the near infrared. Most of the reports on SiNW photodetectors are based on photoconductor, photodiode, or field-effect transistor device structures. These SiNW devices each have their own advantages and trade-offs in optical gain, response time, operating voltage, and dark current noise. Here, we report on the experimental realization of single SiNW bipolar phototransistors on silicon-on-insulator substrates. Our SiNW devices are based on bipolar transistor structures with an optically injected base region and are fabricated using CMOS-compatible processes. The experimentally measured optoelectronic characteristics of the SiNW phototransistors are in good agreement with simulation results. The SiNW phototransistors exhibit significantly enhanced response to UV and visible light, compared with typical Si p-i-n photodiodes. The near infrared responsivities of the SiNW phototransistors are comparable to those of Si avalanche photodiodes but are achieved at much lower operating voltages. Compared with other reported SiNW photodetectors as well as conventional bulk Si photodiodes and phototransistors, the SiNW phototransistors in this work demonstrate the combined advantages of high gain, high photoresponse, low dark current, and low operating voltage.

  8. Nanowires: properties, applications and synthesis via porous anodic ...

    Moreover, periodic arrays of magnetic nanowires hold high potential for recording media application. Nanowires are also potential candidates for sensor and bio-medical applications. In the present article, the physical and chemical properties of nanowires along with their probable applications in different fields have been ...

  9. Contact planarization of ensemble nanowires

    Chia, A. C. E.; LaPierre, R. R.

    2011-06-01

    The viability of four organic polymers (S1808, SC200, SU8 and Cyclotene) as filling materials to achieve planarization of ensemble nanowire arrays is reported. Analysis of the porosity, surface roughness and thermal stability of each filling material was performed. Sonication was used as an effective method to remove the tops of the nanowires (NWs) to achieve complete planarization. Ensemble nanowire devices were fully fabricated and I-V measurements confirmed that Cyclotene effectively planarizes the NWs while still serving the role as an insulating layer between the top and bottom contacts. These processes and analysis can be easily implemented into future characterization and fabrication of ensemble NWs for optoelectronic device applications.

  10. Thermoelectric properties of semiconductor nanowire networks

    Roslyak, Oleksiy; Piryatinski, Andrei

    2016-03-01

    To examine the thermoelectric (TE) properties of a semiconductor nanowire (NW) network, we propose a theoretical approach mapping the TE network on a two-port network. In contrast to a conventional single-port (i.e., resistor) network model, our model allows for large scale calculations showing convergence of TE figure of merit, ZT, with an increasing number of junctions. Using this model, numerical simulations are performed for the Bi2Te3 branched nanowire (BNW) and Cayley tree NW (CTNW) network. We find that the phonon scattering at the network junctions plays a dominant role in enhancing the network ZT. Specifically, disordered BNW and CTNW demonstrate an order of magnitude higher ZT enhancement compared to their ordered counterparts. Formation of preferential TE pathways in CTNW makes the network effectively behave as its BNW counterpart. We provide formalism for simulating large scale nanowire networks hinged upon experimentally measurable TE parameters of a single T-junction.

  11. Tracking Ultrafast Carrier Dynamics in Single Semiconductor Nanowire Heterostructures

    Taylor A.J.

    2013-03-01

    Full Text Available An understanding of non-equilibrium carrier dynamics in silicon (Si nanowires (NWs and NW heterostructures is very important due to their many nanophotonic and nanoelectronics applications. Here, we describe the first measurements of ultrafast carrier dynamics and diffusion in single heterostructured Si nanowires, obtained using ultrafast optical microscopy. By isolating individual nanowires, we avoid complications resulting from the broad size and alignment distribution in nanowire ensembles, allowing us to directly probe ultrafast carrier dynamics in these quasi-one-dimensional systems. Spatially-resolved pump-probe spectroscopy demonstrates the influence of surface-mediated mechanisms on carrier dynamics in a single NW, while polarization-resolved femtosecond pump-probe spectroscopy reveals a clear anisotropy in carrier lifetimes measured parallel and perpendicular to the NW axis, due to density-dependent Auger recombination. Furthermore, separating the pump and probe spots along the NW axis enabled us to track space and time dependent carrier diffusion in radial and axial NW heterostructures. These results enable us to reveal the influence of radial and axial interfaces on carrier dynamics and charge transport in these quasi-one-dimensional nanosystems, which can then be used to tailor carrier relaxation in a single nanowire heterostructure for a given application.

  12. Transparent, double-sided, ITO-free, flexible dye-sensitized solar cells based on metal wire/ZnO nanowire arrays

    Wang, Wei; Zhao, Qing; Li, Heng; Yu, Dapeng [State Key Laboratory for Mesoscopic Physics and Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871 (China); Wu, Hongwei; Zou, Dechun [Beijing National Laboratory for Molecular Sciences, Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871 (China)

    2012-07-10

    Transparent, double-sided, flexible, ITO-free dye-sensitized solar cells (DSSCs) are fabricated in a simple, facile, and controllable way. Highly ordered, high-crystal-quality, high-density ZnO nanowire arrays are radially grown on stainless steel, Au, Ag, and Cu microwires, which serve as working electrodes. Pt wires serve as the counter electrodes. Two metal wires are encased in electrolyte between two poly(ethylene terephthalate) (PET) films (or polydimethylsiloxane (PDMS) films) to render the device both flexible and highly transparent. The effect of the dye thickness on the photovoltaic performance of the DSSCs as a function of dye-loading time is investigated systematically. Shorter dye-loading times lead to thinner dye layers and better device performance. A dye-loading time of 20 min results in the best device performance. An oxidation treatment of the metal wires is developed effectively to avoid the galvanic-battery effect found in the experiment, which is crucial for real applications of double-metal-wire DSSC configurations. The device shows very good transparency and can increase sunlight use efficiency through two-sided illumination. The double-wire DSSCs remain stable for a long period of time and can be bent at large angles, up to 107 , reversibly, without any loss of performance. The double-wire-PET, planar solar-cell configuration can be used as window stickers and can be readily realized for large-area-weave roll-to-roll processing. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  13. Simple approach for the fabrication of PEDOT-coated Si nanowires

    Mingxuan Zhu

    2015-03-01

    Full Text Available The synthesis of a conformal poly(3,4-ethylenedioxythiophene (PEDOT layer on Si nanowires was demonstrated using a pulsed electrodeposition technique. N-type Si nanowire (SiNWs arrays were synthesized using an electroless metal-assisted chemical etching technique. The dependence of the SiNW reflection on the concentration of the AgNO3 solution was identified. A reflection of less than 2% over the entire visible spectral range was obtained for these structures, evidencing their excellent antireflective properties. The etched SiNWs nanostructures can be further modified by using a tapering technique, which further preserves the strong light trapping effect. P-type PEDOT was grown on these SiNWs using electrochemical methods. Since the polymerization reaction is a very fast process with regards to monomer diffusion along the SiNW, the conformal deposition by classical, fixed potential deposition was not favored. Instead, the core–shell heterojunction structure was finally achieved by a pulsed deposition method. An extremely large shunt resistance was exhibited and determined to be related to the diffusion conditions occurring during polymerization.

  14. Synthesis and electrical characterization of vertically-aligned ZnO–CuO hybrid nanowire p–n junctions

    Pukird, Supakorn; Song, Wooseok; Noothongkaew, Suttinart; Kim, Seong Ku; Min, Bok Ki; Kim, Seong Jun; Kim, Ki Woong; Myung, Sung; An, Ki-Seok

    2015-01-01

    Highlights: • Vertically-aligned ZnO–CuO hybrid nanowire arrays were synthesized by a two-step thermal chemical vapor deposition process. • The diameter of parallel-connected ZnO and CuO NWs were estimated to be 146 ± 12 nm and 55 ± 11 nm, respectively, and the formation of high-quality hexagonal ZnO and monoclinic CuO NWs were observed. • Clear rectifying behavior related with thermionic emission of carriers and the presence of an electrical potential barrier between the ZnO and CuO NWs were observed. - Abstract: In order to form nanowire (NW)-based p–n junctions, vertically-aligned ZnO–CuO hybrid NW arrays were synthesized by a two-step thermal chemical vapor deposition process. The diameter of parallel-connected ZnO and CuO NWs were estimated to be 146 ± 12 nm and 55 ± 11 nm, respectively, as observed by scanning electron microscopy. Chemical and structural characterizations of ZnO–CuO hybrid NW arrays were performed using X-ray photoelectron spectroscopy and X-ray diffraction, resulting in the formation of high-quality hexagonal ZnO and monoclinic CuO NWs. The temperature dependence of I–V curves and impedance spectra suggested that clear rectifying behavior related with thermionic emission of carriers and the presence of an electrical potential barrier between the ZnO and CuO NWs

  15. Controllable electrical properties of metal-doped In2O3 nanowires for high-performance enhancement-mode transistors.

    Zou, Xuming; Liu, Xingqiang; Wang, Chunlan; Jiang, Ying; Wang, Yong; Xiao, Xiangheng; Ho, Johnny C; Li, Jinchai; Jiang, Changzhong; Xiong, Qihua; Liao, Lei

    2013-01-22

    In recent years, In(2)O(3) nanowires (NWs) have been widely explored in many technological areas due to their excellent electrical and optical properties; however, most of these devices are based on In(2)O(3) NW field-effect transistors (FETs) operating in the depletion mode, which induces relatively higher power consumption and fancier circuit integration design. Here, n-type enhancement-mode In(2)O(3) NW FETs are successfully fabricated by doping different metal elements (Mg, Al, and Ga) in the NW channels. Importantly, the resulting threshold voltage can be effectively modulated through varying the metal (Mg, Ga, and Al) content in the NWs. A series of scaling effects in the mobility, transconductance, threshold voltage, and source-drain current with respect to the device channel length are also observed. Specifically, a small gate delay time (0.01 ns) and high on-current density (0.9 mA/μm) are obtained at 300 nm channel length. Furthermore, Mg-doped In(2)O(3) NWs are then employed to fabricate NW parallel array FETs with a high saturation current (0.5 mA), on/off ratio (>10(9)), and field-effect mobility (110 cm(2)/V·s), while the subthreshold slope and threshold voltage do not show any significant changes. All of these results indicate the great potency for metal-doped In(2)O(3) NWs used in the low-power, high-performance thin-film transistors.

  16. Fabrication of Two-Dimensional Arrays of Diameter-Tunable PS-b-P2VP Nanowires at the Air/Water Interface.

    Zhao, Xingjuan; Yu, Xiaoli; Lee, Yong-Ill; Liu, Hong-Guo

    2016-11-15

    Composite thin films with well-defined and parallel nanowires were fabricated from the binary blends of a diblock copolymer polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP) and several homopolystyrenes (h-PSs) at the air/liquid interface through a facile technique, which involves solution self-assembly, interface adsorption, and further self-organization processes. It was confirmed that the nanowires that appeared at the air/water interface came from the cylindrical micelles formed in solution. Interestingly, the diameters of the nanowires are uniform and can be tuned precisely from 45 to 247 nm by incorporating the h-PS molecules into the micellar core. This parallel alignment of the nanowires has potential applications in optical devices and enables the nanowires to be used as templates to prepare functional nanostructures. The extent to which h-PS molecules with different molecular weights are able to influence the diameter control of the nanowires was also systematically investigated.

  17. Click Chemistry Mediated Functionalization of Vertical Nanowires for Biological Applications.

    Vutti, Surendra; Schoffelen, Sanne; Bolinsson, Jessica; Buch-Månson, Nina; Bovet, Nicolas; Nygård, Jesper; Martinez, Karen L; Meldal, Morten

    2016-01-11

    Semiconductor nanowires (NWs) are gaining significant importance in various biological applications, such as biosensing and drug delivery. Efficient and controlled immobilization of biomolecules on the NW surface is crucial for many of these applications. Here, we present for the first time the use of the Cu(I) -catalyzed alkyne-azide cycloaddition and its strain-promoted variant for the covalent functionalization of vertical NWs with peptides and proteins. The potential of the approach was demonstrated in two complementary applications of measuring enzyme activity and protein binding, which is of general interest for biological studies. The attachment of a peptide substrate provided NW arrays for the detection of protease activity. In addition, green fluorescent protein was immobilized in a site-specific manner and recognized by antibody binding to demonstrate the proof-of-concept for the use of covalently modified NWs for diagnostic purposes using minute amounts of material. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Organic Nanowires

    Balzer, Frank; Schiek, Manuela; Al-Shamery, Katharina

    Single crystalline nanowires from fluorescing organic molecules like para-phenylenes or thiophenes are supposed to become key elements in future integrated optoelectronic devices [1]. For a sophisticated design of devices based on nanowires the basic principles of the nanowire formation have...... atomic force microscopy and from polarized far-field optical microscopy for various prototypical molecules are reproduced by electrostatic and Monte Carlo calculations. Based on the crystal structure, predictions on the growth habit from other conjugated molecules become in reach....

  19. Micromagnetic simulations of cylindrical magnetic nanowires

    Ivanov, Yurii P.; Chubykalo-Fesenko, O.

    2015-01-01

    This chapter reviews micromagnetic simulations of cylindrical magnetic nanowires and their ordered arrays. It starts with a description of the theoretical background of micromagnetism. The chapter discusses main magnetization reversal modes, domain

  20. Carbon Nanotube-Silicon Nanowire Heterojunction Solar Cells with Gas-Dependent Photovoltaic Performances and Their Application in Self-Powered NO2 Detecting.

    Jia, Yi; Zhang, Zexia; Xiao, Lin; Lv, Ruitao

    2016-12-01

    A multifunctional device combining photovoltaic conversion and toxic gas sensitivity is reported. In this device, carbon nanotube (CNT) membranes are used to cover onto silicon nanowire (SiNW) arrays to form heterojunction. The porous structure and large specific surface area in the heterojunction structure are both benefits for gas adsorption. In virtue of these merits, gas doping is a feasible method to improve cell's performance and the device can also work as a self-powered gas sensor beyond a solar cell. It shows a significant improvement in cell efficiency (more than 200 times) after NO2 molecules doping (device working as a solar cell) and a fast, reversible response property for NO2 detection (device working as a gas sensor). Such multifunctional CNT-SiNW structure can be expected to open a new avenue for developing self-powered, efficient toxic gas-sensing devices in the future.

  1. Co{sub 3}O{sub 4} nanowires@MnO{sub 2} nanolayer or nanoflakes core–shell arrays for high-performance supercapacitors: The influence of morphology on performance

    Wang, Ke [State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049 (China); Shi, Zhongqi, E-mail: zhongqishi@mail.xjtu.edu.cn [State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049 (China); Wang, Yuanyuan [State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049 (China); Ye, Zhiguo [State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049 (China); School of Materials Science and Engineering, Nanchang Hangkong University, Nanchang 330063 (China); Xia, Hongyan [State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049 (China); Liu, Guiwu [School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013 (China); Qiao, Guanjun, E-mail: gjqiao@mail.xjtu.edu.cn [State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049 (China); School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013 (China)

    2015-03-05

    Highlights: • MnO{sub 2} nanolayer is coated on Co{sub 3}O{sub 4} nanowire arrays forming a core–shell nanocable structure via chemical bath deposition. • The electrochemical performances of the MnO{sub 2} with two different morphologies are compared and investigated. • Both the Co{sub 3}O{sub 4} nanowires@MnO{sub 2} nanolayer and nanoflakes core–shell arrays possess high specific capacitance. - Abstract: The Co{sub 3}O{sub 4} nanowires@MnO{sub 2} nanolayer or nanoflakes core–shell arrays (Co{sub 3}O{sub 4}@MnO{sub 2} nanolayer or nanoflakes NWAs) supported on carbon fiber paper have been fabricated via a facile and green method and further investigated on the performance as the electrodes for supercapacitors. Our experimental results evidently indicate that both the Co{sub 3}O{sub 4}@MnO{sub 2} nanoflakes and nanolayer NWAs are capable of delivering specific capacitances as high as 1209.4 and 1215.6 F g{sup −1} (based on the MnO{sub 2}) at the current density of 1 A g{sup −1}. Due to the delicately designed hierarchical nanostructure that distributing the nanoscaled MnO{sub 2} on the nanowires with better electric conductivity, the active materials take advantage of the high effective surface area, facile electrolyte diffusion and fast electron transfer. The phenomenon that the Co{sub 3}O{sub 4}@MnO{sub 2} nanolayer NWAs with smaller specific surface area become superior in electrochemical performance to the Co{sub 3}O{sub 4}@MnO{sub 2} nanoflakes NWAs has been carefully investigated. The smaller charge transfer and electrolyte diffusion resistances are mainly demonstrated to be responsible. The analyses presented here could contribute to developing the optimal nanostructure of electrode materials for high-performance supercapacitors.

  2. Magnetostatic Interaction in Fe-Co Nanowires

    Laura Elbaile

    2012-01-01

    Full Text Available Arrays of Fe-Co alloy nanowires with diameter around 35 nm and several micrometers in length have been synthesized by codepositing Fe and Co into porous anodic alumina. The morphology, structure, and magnetic properties of the nanowires (hysteresis loops and remanence curves were characterized by SEM, TEM, X-ray diffraction (XRD, and VSM, respectively. The XRD patterns indicate that the Fe-Co nanowires present a body-centered cubic (bcc structure and a preferred (110 orientation perpendicular to the template surface. From the hysteresis loops obtained with the magnetic field applied in the axis direction of the nanowires, we can observe that the coercive field slightly decreases when the nanowire length increases. This magnetic behaviour is analyzed considering the shape anisotropy and the dipolar interactions among nanowires.

  3. Friction and shear strength at the nanowire-substrate interfaces.

    Zhu, Yong; Qin, Qingquan; Gu, Yi; Wang, Zhonglin

    2009-11-28

    The friction and shear strength of nanowire (NW)-substrate interfaces critically influences the electrical/mechanical performance and life time of NW-based nanodevices. Yet, very few reports on this subject are available in the literature because of the experimental challenges involved and, more specifically no studies have been reported to investigate the configuration of individual NW tip in contact with a substrate. In this letter, using a new experimental method, we report the friction measurement between a NW tip and a substrate for the first time. The measurement was based on NW buckling in situ inside a scanning electron microscope. The coefficients of friction between silver NW and gold substrate and between ZnO NW and gold substrate were found to be 0.09-0.12 and 0.10-0.15, respectively. The adhesion between a NW and the substrate modified the true contact area, which affected the interfacial shear strength. Continuum mechanics calculation found that interfacial shear strengths between silver NW and gold substrate and between ZnO NW and gold substrate were 134-139 MPa and 78.9-95.3 MPa, respectively. This method can be applied to measure friction parameters of other NW-substrate systems. Our results on interfacial friction and shear strength could have implication on the AFM three-point bending tests used for nanomechanical characterisation.

  4. Constructing Ultrahigh-Capacity Zinc-Nickel-Cobalt Oxide@Ni(OH)2 Core-Shell Nanowire Arrays for High-Performance Coaxial Fiber-Shaped Asymmetric Supercapacitors.

    Zhang, Qichong; Xu, Weiwei; Sun, Juan; Pan, Zhenghui; Zhao, Jingxin; Wang, Xiaona; Zhang, Jun; Man, Ping; Guo, Jiabin; Zhou, Zhenyu; He, Bing; Zhang, Zengxing; Li, Qingwen; Zhang, Yuegang; Xu, Lai; Yao, Yagang

    2017-12-13

    Increased efforts have recently been devoted to developing high-energy-density flexible supercapacitors for their practical applications in portable and wearable electronics. Although high operating voltages have been achieved in fiber-shaped asymmetric supercapacitors (FASCs), low specific capacitance still restricts the further enhancement of their energy density. This article specifies a facile and cost-effective method to directly grow three-dimensionally well-aligned zinc-nickel-cobalt oxide (ZNCO)@Ni(OH) 2 nanowire arrays (NWAs) on a carbon nanotube fiber (CNTF) with an ultrahigh specific capacitance of 2847.5 F/cm 3 (10.678 F/cm 2 ) at a current density of 1 mA/cm 2 , These levels are approximately five times higher than those of ZNCO NWAs/CNTF electrodes (2.10 F/cm 2 ) and four times higher than Ni(OH) 2 /CNTF electrodes (2.55 F/cm 2 ). Benefiting from their unique features, we successfully fabricated a prototype coaxial FASC (CFASC) with a maximum operating voltage of 1.6 V, which was assembled by adopting ZNCO@Ni(OH) 2 NWAs/CNTF as the core electrode and a thin layer of carbon coated vanadium nitride (VN@C) NWAs on a carbon nanotube strip (CNTS) as the outer electrode with KOH poly(vinyl alcohol) (PVA) as the gel electrolyte. A high specific capacitance of 94.67 F/cm 3 (573.75 mF/cm 2 ) and an exceptional energy density of 33.66 mWh/cm 3 (204.02 μWh/cm 2 ) were achieved for our CFASC device, which represent the highest levels of fiber-shaped supercapacitors to date. More importantly, the fiber-shaped ZnO-based photodetector is powered by the integrated CFASC, and it demonstrates excellent sensitivity in detecting UV light. Thus, this work paves the way to the construction of ultrahigh-capacity electrode materials for next-generation wearable energy-storage devices.

  5. IC Compatible Wafer Level Fabrication of Silicon Nanowire Field Effect Transistors for Biosensing Applications

    Moh, T.S.Y.

    2013-01-01

    In biosensing, nano-devices such as Silicon Nanowire Field Effect Transistors (SiNW FETs) are promising components/sensors for ultra-high sensitive detection, especially when samples are low in concentration or a limited volume is available. Current processing of SiNW FETs often relies on expensive

  6. Synthesis of uniform CdS nanowires in high yield and its single nanowire electrical property

    Yan Shancheng; Sun Litao; Qu Peng; Huang Ninping; Song Yinchen; Xiao Zhongdang

    2009-01-01

    Large-scale high quality CdS nanowires with uniform diameter were synthesized by using a rapid and simple solvothermal route. Field emission scan electron microscopy (FESEM) and transmission electron microscopy (TEM) images show that the CdS nanowires have diameter of about 26 nm and length up to several micrometres. High resolution TEM (HRTEM) study indicates the single-crystalline nature of CdS nanowires with an oriented growth along the c-axis direction. The optical properties of the products were characterized by UV-vis absorption spectra, photoluminescence spectra and Raman spectra. The resistivity, electron concentration and electron mobility of single NW are calculated by fitting the symmetric I-V curves measured on single NW by the metal-semiconductor-metal model based on thermionic field emission theory. - Graphical abstract: Large-scale high quality CdS nanowires (NWs) with uniform diameter were synthesized by using a rapid and simple solvothermal route. The reaction time is reduced to 2 h, comparing to other synthesis which needed long reaction time up to 12 h. In addition, the as-prepared CdS nanowires have more uniform diameter and high yield. More importantly, the I-V curve of present single CdS nanowire has a good symmetric characteristic as expected by the theory.

  7. Surface state modulation through wet chemical treatment as a route to controlling the electrical properties of ZnO nanowire arrays investigated with XPS

    Lord, Alex M.; Maffeis, Thierry G.; Allen, Martin W.; Morgan, David; Davies, Philip R.; Jones, Daniel R.; Evans, Jonathan E.; Smith, Nathan A.; Wilks, Steve P.

    2014-01-01

    Highlights: • Direct measurement of the surface band bending exhibited by ZnO nanowires using monochromatic XPS. • Modulation of the surface depletion region using wet chemical treatment (EtOH, H 2 O 2 ). • The measured surface potential barrier agrees with electrical measurements of individual nanowires. • H 2 O 2 depletes the nanowire of charge carriers while EtOH donates electrons at the surface. • EtOH has the effect of restoring the surface potential barrier of oxidised nanowires. - Abstract: ZnO is a wide bandgap semiconductor that has many potential applications including solar cell electrodes, transparent thin film transistors and gas/biological sensors. Since the surfaces of ZnO materials have no amorphous or oxidised layers, they are very environmentally sensitive, making control of their semiconductor properties challenging. In particular, the electronic properties of ZnO nanostructures are dominated by surface effects while surface conduction layers have been observed in thin films and bulk crystals. Therefore, the ability to use the ZnO materials in a controlled way depends on the development of simple techniques to modulate their surface electronic properties. Here, we use monochromatic x-ray photoelectron spectroscopy (XPS) to investigate the use of different wet chemical treatments (EtOH, H 2 O 2 ) to control the electronic properties of ZnO nanowires by modulating the surface depletion region. The valence band and core level XPS spectra are used to explore the relationship between the surface chemistry of the nanowires and the surface band bending

  8. Carbon monoxide sensing properties of B-, Al- and Ga-doped Si nanowires

    de Santiago, F.; Trejo, A.; Miranda, A.; Salazar, F.; Carvajal, E.; Pérez, L. A.; Cruz-Irisson, M.

    2018-05-01

    Silicon nanowires (SiNWs) are considered as potential chemical sensors due to their large surface-to-volume ratio and their possible integration into arrays for nanotechnological applications. Detection of harmful gases like CO has been experimentally demonstrated, however, the influence of doping on the sensing capacity of SiNWs has not yet been reported. For this work, we theoretically studied the surface adsorption of a CO molecule on hydrogen-passivated SiNWs grown along the [111] crystallographic direction and compared it with the adsorption of other molecules such as NO, and O2. Three nanowire diameters and three dopant elements (B, Al and Ga) were considered, and calculations were done within the density functional theory framework. The results indicate that CO molecules are more strongly adsorbed on the doped SiNW than on the pristine SiNW. The following trend was observed for the CO adsorption energies: E A[B-doped] > E A[Al-doped] > E A[Ga-doped] > E A[undoped], for all diameters. The electronic charge transfers between the SiNWs and the adsorbed CO were estimated by using a Voronoi population analysis. The CO adsorbed onto the undoped SiNWs has an electron-acceptor character, while the CO adsorbed onto the B-, Al-, and Ga-doped SiNWs exhibits an electron-donor character. Comparing these results with the ones obtained for the NO and O2 adsorption, the larger CO adsorption energy on B-doped SiNWs indicates their good selectivity towards CO. These results suggest that SiNW-based sensors of toxic gases could represent a clear and advantageous application of nanotechnology in the improvement of human quality of life.

  9. Chiral transformation: From single nanowire to double helix

    Wang, Yong

    2011-12-21

    We report a new type of water-soluble ultrathin Au-Ag alloy nanowire (NW), which exhibits unprecedented behavior in a colloidal solution. Upon growth of a thin metal (Pd, Pt, or Au) layer, the NW winds around itself to give a metallic double helix. We propose that the winding originates from the chirality within the as-synthesized Au-Ag NWs, which were induced to untwist upon metal deposition. © 2011 American Chemical Society.

  10. Silicon nanowires for photovoltaic solar energy conversion.

    Peng, Kui-Qing; Lee, Shuit-Tong

    2011-01-11

    Semiconductor nanowires are attracting intense interest as a promising material for solar energy conversion for the new-generation photovoltaic (PV) technology. In particular, silicon nanowires (SiNWs) are under active investigation for PV applications because they offer novel approaches for solar-to-electric energy conversion leading to high-efficiency devices via simple manufacturing. This article reviews the recent developments in the utilization of SiNWs for PV applications, the relationship between SiNW-based PV device structure and performance, and the challenges to obtaining high-performance cost-effective solar cells.

  11. Resonance of curved nanowires

    Calabri, L [CNR-INFM-National Research Center on nanoStructures and bioSystems at Surfaces (S3), Via Campi 213/a, 41100 Modena (Italy); Pugno, N [Department of Structural Engineering and Geotechnics, Politecnico di Torino, Turin (Italy); Ding, W [Department of Mechanical Engineering, Northwestern University, Evanston, IL 60208-3111 (United States); Ruoff, R S [Department of Mechanical Engineering, Northwestern University, Evanston, IL 60208-3111 (United States)

    2006-08-23

    The effects of non-ideal experimental configuration on the mechanical resonance of boron (B) nanowires (NWs) were studied to obtain the corrected value for the Young's modulus. The following effects have been theoretically considered: (i) the presence of intrinsic curvature (ii) non-ideal clamps (iii) spurious masses (iv) coating layer, and (v) large displacements. An energy-based analytical analysis was developed to treat such effects and their interactions. Here, we focus on treating the effect of the intrinsic curvature on the mechanical resonance. The analytical approach has been confirmed by numerical FEM analysis. A parallax method was used to obtain the three-dimensional geometry of the NW.

  12. Performance enhancement of metal nanowire-based transparent electrodes by electrically driven nanoscale nucleation of metal oxides

    Shiau, Yu-Jeng; Chiang, Kai-Ming; Lin, Hao-Wu

    2015-07-01

    Solution-processed silver nanowire (AgNW) electrodes have been considered to be promising materials for next-generation flexible transparent conductive electrodes. Despite the fact that a single AgNW has extremely high conductivities, the high junction resistance between nanowires limits the performance of the AgNW matrix. Therefore, post-treatments are usually required to approach better NW-NW contact. Herein, we report a novel linking method that uses joule heating to accumulate sol-gel ZnO near nanowire junctions. The nanoscale ZnO nucleation successfully restrained the thermal instability of the AgNW under current injection and acted as an efficient tightening medium to realize good NW-NW contacts. A low process temperature (PET and PEN, feasible. The optimized AgNW transparent conductive electrodes (TCE) fabricated using this promising linking method exhibited a low sheet resistance (13 Ω sq-1), a high transmission (92% at 550 nm), a high figure of merit (FOM; up to σDC/σOp = 340) and can be applied to wide range of next-generation flexible optoelectronic devices.Solution-processed silver nanowire (AgNW) electrodes have been considered to be promising materials for next-generation flexible transparent conductive electrodes. Despite the fact that a single AgNW has extremely high conductivities, the high junction resistance between nanowires limits the performance of the AgNW matrix. Therefore, post-treatments are usually required to approach better NW-NW contact. Herein, we report a novel linking method that uses joule heating to accumulate sol-gel ZnO near nanowire junctions. The nanoscale ZnO nucleation successfully restrained the thermal instability of the AgNW under current injection and acted as an efficient tightening medium to realize good NW-NW contacts. A low process temperature (PET and PEN, feasible. The optimized AgNW transparent conductive electrodes (TCE) fabricated using this promising linking method exhibited a low sheet resistance (13 Ω sq

  13. Moessbauer study of Fe-Co nanowires

    Chen Ziyu [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou (China)]. E-mail: chenzy@lzu.edu.cn; Zhan Qingfeng; Xue Desheng; Li Fashen [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou (China); Zhou Xuezhi; Kunkel, Henry; Williams, Gwyn [Department of Physics and Astronomy, the University of Manitoba (Canada)

    2002-01-28

    Arrays of Fe{sub 1-x}Co{sub x} (0.0{<=}x{<=}0.92) nanowires have been prepared by an electrochemical process, co-depositing Fe and Co atoms into the pores of anodic aluminium; their compositions were determined by atomic absorption spectroscopy. Transmission electron microscope results show that the nanowires are regularly spaced and uniform in shape with lengths of about 7.5 {mu}m and diameters of 20 nm. The x-ray diffraction indicates a texture in the deposited nanowires. For the composition below 82 at.% cobalt, the nanowires had a body-centred-cubic structure with a [110] preferred orientation. For the 92 at.% cobalt sample, the alloy exhibited a mixture of bcc and face-centred-cubic structure. The room temperature {sup 57}Fe Moessbauer spectra of the arrays of Fe{sub 1-x}Co{sub x} nanowires have second and fifth absorption lines of the six-line pattern with almost zero intensity, indicating that the internal magnetic field in the nanowires lies along the long axis of the nanowire. The maximum values of the hyperfine field (B{sub hf} 36.6{+-}0.1 T) and isomer shift (IS=0.06{+-}0.01 mm s-1) occur for 44 at.% cobalt. The variations of the isomer shift and the linewidths with composition indicate that the Fe{sub 1-x}Co{sub x} alloy nanowires around the equiatomic composition are in an atomistic disordered state. (author)

  14. Quenching of the surface-state-related photoluminescence in Ni-coated ZnO nanowires

    Tang Yang [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China); Graduate School of the Chinese Academy of Sciences (China); Zhao Dongxu, E-mail: dxzhao2000@yahoo.com.c [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China); Zhang Jiying; Shen Dezhen [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China)

    2010-11-01

    Nickel-coated ZnO nanowires (NWs) were fabricated by electrodepositing Ni particles on ZnO NW arrays. The morphological, magnetic, and photoluminescent properties of the Ni-coated ZnO NWs were investigated. The Ni particles were deposited on the ZnO NWs' surface along its length to form a Ni/ZnO shell-core structure. The Ni-coated ZnO NWs exhibited more isotropic characteristic than the electrodeposited Ni films owing to the isotropic sphere structure of the Ni particles. A strong ultraviolet emission can be obtained from the Ni-coated ZnO NWs, while the green emission related to surface states was quenched by the passivated layer.

  15. Quenching of the surface-state-related photoluminescence in Ni-coated ZnO nanowires

    Tang Yang; Zhao Dongxu; Zhang Jiying; Shen Dezhen

    2010-01-01

    Nickel-coated ZnO nanowires (NWs) were fabricated by electrodepositing Ni particles on ZnO NW arrays. The morphological, magnetic, and photoluminescent properties of the Ni-coated ZnO NWs were investigated. The Ni particles were deposited on the ZnO NWs' surface along its length to form a Ni/ZnO shell-core structure. The Ni-coated ZnO NWs exhibited more isotropic characteristic than the electrodeposited Ni films owing to the isotropic sphere structure of the Ni particles. A strong ultraviolet emission can be obtained from the Ni-coated ZnO NWs, while the green emission related to surface states was quenched by the passivated layer.

  16. Silicon nanowire transistors

    Bindal, Ahmet

    2016-01-01

    This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology’s true potential for the next generation VLSI. Describes Silicon Nanowire (SNW) Transistors, as vertically constructed MOS n and p-channel transistors, with low static and dynamic power consumption and small layout footprint; Targets System-on-Chip (SoC) design, supporting very high transistor count (ULSI), minimal power consumption requiring inexpensive substrates for packaging; Enables fabrication of different types...

  17. Synthesis and Growth Mechanism of Ni Nanotubes and Nanowires

    Wang Yiqian

    2009-01-01

    Full Text Available Abstract Highly ordered Ni nanotube and nanowire arrays were fabricated via electrodeposition. The Ni microstructures and the process of the formation were investigated using conventional and high-resolution transmission electron microscope. Herein, we demonstrated the systematic fabrication of Ni nanotube and nanowire arrays and proposed an original growth mechanism. With the different deposition time, nanotubes or nanowires can be obtained. Tubular nanostructures can be obtained at short time, while nanowires take longer time to form. This formation mechanism is applicable to design and synthesize other metal nanostructures and even compound nanostuctures via template-based electrodeposition.

  18. High-Temperature Performance of Stacked Silicon Nanowires for Thermoelectric Power Generation

    Stranz, Andrej; Waag, Andreas; Peiner, Erwin

    2013-07-01

    Deep reactive-ion etching at cryogenic temperatures (cryo-DRIE) has been used to produce arrays of silicon nanowires (NWs) for thermoelectric (TE) power generation devices. Using cryo-DRIE, we were able to fabricate NWs of large aspect ratios (up to 32) using a photoresist mask. Roughening of the NW sidewalls occurred, which has been recognized as beneficial for low thermal conductivity. Generated NWs, which were 7 μm in length and 220 nm to 270 nm in diameter, were robust enough to be stacked with a bulk silicon chip as a common top contact to the NWs. Mechanical support of the NW array, which can be created by filling the free space between the NWs using silicon oxide or polyimide, was not required. The Seebeck voltage, measured across multiple stacks of up to 16 bulk silicon dies, revealed negligible thermal interface resistance. With stacked silicon NWs, we observed Seebeck voltages that were an order of magnitude higher than those observed for bulk silicon. Degradation of the TE performance of silicon NWs was not observed for temperatures up to 470°C and temperature gradients up to 170 K.

  19. Enhanced Optoelectronic Performance of a Passivated Nanowire-Based Device: Key Information from Real-Space Imaging Using 4D Electron Microscopy

    Khan, Jafar Iqbal

    2016-03-03

    Managing trap states and understanding their role in ultrafast charge-carrier dynamics, particularly at surface and interfaces, remains a major bottleneck preventing further advancements and commercial exploitation of nanowire (NW)-based devices. A key challenge is to selectively map such ultrafast dynamical processes on the surfaces of NWs, a capability so far out of reach of time-resolved laser techniques. Selective mapping of surface dynamics in real space and time can only be achieved by applying four-dimensional scanning ultrafast electron microscopy (4D S-UEM). Charge carrier dynamics are spatially and temporally visualized on the surface of InGaN NW arrays before and after surface passivation with octadecylthiol (ODT). The time-resolved secondary electron images clearly demonstrate that carrier recombination on the NW surface is significantly slowed down after ODT treatment. This observation is fully supported by enhancement of the performance of the light emitting device. Direct observation of surface dynamics provides a profound understanding of the photophysical mechanisms on materials\\' surfaces and enables the formulation of effective surface trap state management strategies for the next generation of high-performance NW-based optoelectronic devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. ON current enhancement of nanowire Schottky barrier tunnel field effect transistors

    Takei, Kohei; Hashimoto, Shuichiro; Sun, Jing; Zhang, Xu; Asada, Shuhei; Xu, Taiyu; Matsukawa, Takashi; Masahara, Meishoku; Watanabe, Takanobu

    2016-04-01

    Silicon nanowire Schottky barrier tunnel field effect transistors (NW-SBTFETs) are promising structures for high performance devices. In this study, we fabricated NW-SBTFETs to investigate the effect of nanowire structure on the device characteristics. The NW-SBTFETs were operated with a backgate bias, and the experimental results demonstrate that the ON current density is enhanced by narrowing the width of the nanowire. We confirmed using the Fowler-Nordheim plot that the drain current in the ON state mainly comprises the quantum tunneling component through the Schottky barrier. Comparison with a technology computer aided design (TCAD) simulation revealed that the enhancement is attributed to the electric field concentration at the corners of cross-section of the NW. The study findings suggest an effective approach to securing the ON current by Schottky barrier width modulation.

  1. Silver Nanowire/MnO2 Nanowire Hybrid Polymer Nanocomposites: Materials with High Dielectric Permittivity and Low Dielectric Loss.

    Zeraati, Ali Shayesteh; Arjmand, Mohammad; Sundararaj, Uttandaraman

    2017-04-26

    This study reports the fabrication of hybrid nanocomposites based on silver nanowire/manganese dioxide nanowire/poly(methyl methacrylate) (AgNW/MnO 2 NW/PMMA), using a solution casting technique, with outstanding dielectric permittivity and low dielectric loss. AgNW was synthesized using the hard-template technique, and MnO 2 NW was synthesized employing a hydrothermal method. The prepared AgNW:MnO 2 NW (2.0:1.0 vol %) hybrid nanocomposite showed a high dielectric permittivity (64 at 8.2 GHz) and low dielectric loss (0.31 at 8.2 GHz), which are among the best reported values in the literature in the X-band frequency range (8.2-12.4 GHz). The superior dielectric properties of the hybrid nanocomposites were attributed to (i) dimensionality match between the nanofillers, which increased their synergy, (ii) better dispersion state of AgNW in the presence of MnO 2 NW, (iii) positioning of ferroelectric MnO 2 NW in between AgNWs, which increased the dielectric permittivity of nanodielectrics, thereby increasing dielectric permittivity of the hybrid nanocomposites, (iv) barrier role of MnO 2 NW, i.e., cutting off the contact spots of AgNWs and leading to lower dielectric loss, and (v) AgNW aligned structure, which increased the effective surface area of AgNWs, as nanoelectrodes. Comparison of the dielectric properties of the developed hybrid nanocomposites with the literature highlights their great potential for flexible capacitors.

  2. Vertically grown Ge nanowire Schottky diodes on Si and Ge substrates

    Chandra, Nishant; Tracy, Clarence J.; Cho, Jeong-Hyun; Picraux, S. T.; Hathwar, Raghuraj; Goodnick, Stephen M.

    2015-07-01

    The processing and performance of Schottky diodes formed from arrays of vertical Ge nanowires (NWs) grown on Ge and Si substrates are reported. The goal of this work is to investigate CMOS compatible processes for integrating NWs as components of vertically scaled integrated circuits, and elucidate transport in vertical Schottky NWs. Vertical phosphorus (P) doped Ge NWs were grown using vapor-liquid-solid epitaxy, and nickel (Ni)-Ge Schottky contacts were made to the tops of the NWs. Current-voltage (I-V) characteristics were measured for variable ranges of NW diameters and numbers of nanowires in the arrays, and the I-V characteristics were fit using modified thermionic emission theory to extract the barrier height and ideality factor. As grown NWs did not show rectifying behavior due to the presence of heavy P side-wall doping during growth, resulting in a tunnel contact. After sidewall etching using a dilute peroxide solution, rectifying behavior was obtained. Schottky barrier heights of 0.3-0.4 V and ideality factors close to 2 were extracted using thermionic emission theory, although the model does not give an accurate fit across the whole bias range. Attempts to account for enhanced side-wall conduction due to non-uniform P doping profile during growth through a simple shunt resistance improve the fit, but are still insufficient to provide a good fit. Full three-dimensional numerical modeling using Silvaco Atlas indicates that at least part of this effect is due to the presence of fixed charge and acceptor like traps on the NW surface, which leads to effectively high ideality factors.

  3. Nanowire Lasers

    Couteau C.

    2015-05-01

    Full Text Available We review principles and trends in the use of semiconductor nanowires as gain media for stimulated emission and lasing. Semiconductor nanowires have recently been widely studied for use in integrated optoelectronic devices, such as light-emitting diodes (LEDs, solar cells, and transistors. Intensive research has also been conducted in the use of nanowires for subwavelength laser systems that take advantage of their quasione- dimensional (1D nature, flexibility in material choice and combination, and intrinsic optoelectronic properties. First, we provide an overview on using quasi-1D nanowire systems to realize subwavelength lasers with efficient, directional, and low-threshold emission. We then describe the state of the art for nanowire lasers in terms of materials, geometry, andwavelength tunability.Next,we present the basics of lasing in semiconductor nanowires, define the key parameters for stimulated emission, and introduce the properties of nanowires. We then review advanced nanowire laser designs from the literature. Finally, we present interesting perspectives for low-threshold nanoscale light sources and optical interconnects. We intend to illustrate the potential of nanolasers inmany applications, such as nanophotonic devices that integrate electronics and photonics for next-generation optoelectronic devices. For instance, these building blocks for nanoscale photonics can be used for data storage and biomedical applications when coupled to on-chip characterization tools. These nanoscale monochromatic laser light sources promise breakthroughs in nanophotonics, as they can operate at room temperature, can potentially be electrically driven, and can yield a better understanding of intrinsic nanomaterial properties and surface-state effects in lowdimensional semiconductor systems.

  4. Review on the dynamics of semiconductor nanowire lasers

    Röder, Robert; Ronning, Carsten

    2018-03-01

    Semiconductor optoelectronic devices have contributed tremendously to the technological progress in the past 50-60 years. Today, they also play a key role in nanophotonics stimulated by the inherent limitations of electronic integrated circuits and the growing demand for faster communications on chip. In particular, the field of ‘nanowire photonics’ has emerged including the search for coherent light sources with a nano-scaled footprint. The past decade has been dedicated to find suitable semiconductor nanowire (NW) materials for such nanolasers. Nowadays, such NW lasers consistently work at room temperature covering a huge spectral range from the ultraviolet down to the mid-infrared depending on the band gap of the NW material. Furthermore, first approaches towards the modification and optimization of such NW laser devices have been demonstrated. The underlying dynamics of the electronic and photonic NW systems have also been studied very recently, as they need to be understood in order to push the technological relevance of nano-scaled coherent light sources. Therefore, this review will first present novel measurement approaches in order to study the ultrafast temporal and optical mode dynamics of individual NW laser devices. Furthermore, these fundamental new insights are reviewed and deeply discussed towards the efficient control and adjustment of the dynamics in semiconductor NW lasers.

  5. Study of the thermal conductivity of ZnO nanowires/PMMA composites

    Igamberdiev, Kh. T.; Yuldashev, Sh. U.; Cho, H. D.; Kang, T. W.; Rakhimova, Sh. M.; Akhmedov, T. Kh.

    2012-01-01

    From thermal conductivity measurements on ZnO nanowires (NWs)/poly(methyl methacrylate) PMMA composites, the thermal conductivities of the ZnO nanowires were determined. The thermal conductivity of a ZnO NW decreases considerably with decreasing nanowire diameter, and for a ZnO nanowire with a diameter of 250 nm, the thermal conductivity at room temperature is approximately two times lower than that of bulk ZnO at the same temperature. The results of this study show that the thermal conductivity of a ZnO NW is mainly determined by increased phonon-surface boundary scattering. These results could be useful for the design of ZnO-nanowire-based devices.

  6. Electrical limit of silver nanowire electrodes: Direct measurement of the nanowire junction resistance

    Selzer, Franz; Floresca, Carlo; Kneppe, David; Bormann, Ludwig; Sachse, Christoph; Weiß , Nelli; Eychmü ller, Alexander; Amassian, Aram; Mü ller-Meskamp, Lars; Leo, Karl

    2016-01-01

    We measure basic network parameters of silvernanowire (AgNW) networks commonly used as transparent conductingelectrodes in organic optoelectronic devices. By means of four point probing with nanoprobes, the wire-to-wire junction resistance and the resistance of single nanowires are measured. The resistanceRNW of a single nanowire shows a value of RNW=(4.96±0.18) Ω/μm. The junction resistanceRJ differs for annealed and non-annealed NW networks, exhibiting values of RJ=(25.2±1.9) Ω (annealed) and RJ=(529±239) Ω (non-annealed), respectively. Our simulation achieves a good agreement between the measured network parameters and the sheet resistanceRS of the entire network. Extrapolating RJ to zero, our study show that we are close to the electrical limit of the conductivity of our AgNW system: We obtain a possible RS reduction by only ≈20% (common RS≈10 Ω/sq). Therefore, we expect further performance improvements in AgNW systems mainly by increasing NW length or by utilizing novel network geometries.

  7. Electrical limit of silver nanowire electrodes: Direct measurement of the nanowire junction resistance

    Selzer, Franz

    2016-04-19

    We measure basic network parameters of silvernanowire (AgNW) networks commonly used as transparent conductingelectrodes in organic optoelectronic devices. By means of four point probing with nanoprobes, the wire-to-wire junction resistance and the resistance of single nanowires are measured. The resistanceRNW of a single nanowire shows a value of RNW=(4.96±0.18) Ω/μm. The junction resistanceRJ differs for annealed and non-annealed NW networks, exhibiting values of RJ=(25.2±1.9) Ω (annealed) and RJ=(529±239) Ω (non-annealed), respectively. Our simulation achieves a good agreement between the measured network parameters and the sheet resistanceRS of the entire network. Extrapolating RJ to zero, our study show that we are close to the electrical limit of the conductivity of our AgNW system: We obtain a possible RS reduction by only ≈20% (common RS≈10 Ω/sq). Therefore, we expect further performance improvements in AgNW systems mainly by increasing NW length or by utilizing novel network geometries.

  8. Flexible powder electroluminescent device on silver nanowire electrode

    Park, K.W.; Jeong, H.S.; Park, J.H.; Deressa, G.; Jeong, Y.T.; Lim, K.T. [Department of Display Science and Engineering, Pukyong National University, Busan 608-737 (Korea, Republic of); Park, J.H. [AIDEN company, Cheongju-si 361-911 (Korea, Republic of); Lee, S.H. [R& D Business Lab, Hyosung Corporation, Anyang 431-080 (Korea, Republic of); Kim, J.S., E-mail: jsukim@pknu.ac.kr [Department of Display Science and Engineering, Pukyong National University, Busan 608-737 (Korea, Republic of)

    2015-09-15

    We have demonstrated the flexible AC powder electroluminescent device based on Ag nanowire electrode. The Ag nanowire electrode showed the nanowire morphology of 20 nm in diameter and 15 μm in length, the transmittance of 87%, and the sheet resistance of 50 Ω/sq, and the higher flexibility than the conventional ITO substrate. The electroluminescence spectra of the Ag nanowire-based device in all frequency and voltage ranges were almost similar with the ITO-based device. In comparison with the ITO-based device, the luminous efficiency of the Ag nanowire-based device was almost same as 1.53 lm/W. - Highlights: • Flexibility of Ag NW substrate was higher than ITO substrate. • EL intensity of Ag NW-based EL device was almost similar with ITO-based EL device. • Charge density and turn-on voltage of Ag NW-based EL device were a little larger than ITO-based EL device.

  9. Flexible powder electroluminescent device on silver nanowire electrode

    Park, K.W.; Jeong, H.S.; Park, J.H.; Deressa, G.; Jeong, Y.T.; Lim, K.T.; Park, J.H.; Lee, S.H.; Kim, J.S.

    2015-01-01

    We have demonstrated the flexible AC powder electroluminescent device based on Ag nanowire electrode. The Ag nanowire electrode showed the nanowire morphology of 20 nm in diameter and 15 μm in length, the transmittance of 87%, and the sheet resistance of 50 Ω/sq, and the higher flexibility than the conventional ITO substrate. The electroluminescence spectra of the Ag nanowire-based device in all frequency and voltage ranges were almost similar with the ITO-based device. In comparison with the ITO-based device, the luminous efficiency of the Ag nanowire-based device was almost same as 1.53 lm/W. - Highlights: • Flexibility of Ag NW substrate was higher than ITO substrate. • EL intensity of Ag NW-based EL device was almost similar with ITO-based EL device. • Charge density and turn-on voltage of Ag NW-based EL device were a little larger than ITO-based EL device

  10. Performance of ethanol electro-oxidation on Ni-Cu alloy nanowires through composition modulation.

    Tian, Xi-Ke; Zhao, Xiao-Yu; Zhang, Li-de; Yang, Chao; Pi, Zhen-Bang; Zhang, Su-Xin

    2008-05-28

    To reduce the cost of the catalyst for direct ethanol fuel cells and improve its catalytic activity, highly ordered Ni-Cu alloy nanowire arrays have been fabricated successfully by differential pulse current electro-deposition into the pores of a porous anodic alumina membrane (AAMs). The energy dispersion spectrum, scanning and transmission electron microscopy were utilized to characterize the composition and morphology of the Ni-Cu alloy nanowire arrays. The results reveal that the nanowires in the array are uniform, well isolated and parallel to each other. The catalytic activity of the nanowire electrode arrays for ethanol oxidation was tested and the binary alloy nanowire array possesses good catalytic activity for the electro-oxidation of ethanol. The performance of ethanol electro-oxidation was controlled by varying the Cu content in the Ni-Cu alloy and the Ni-Cu alloy nanowire electrode shows much better stability than the pure Ni one.

  11. Performance of ethanol electro-oxidation on Ni-Cu alloy nanowires through composition modulation

    Tian Xike; Zhao Xiaoyu; Yang Chao; Pi Zhenbang; Zhang Lide; Zhang Suxin

    2008-01-01

    To reduce the cost of the catalyst for direct ethanol fuel cells and improve its catalytic activity, highly ordered Ni-Cu alloy nanowire arrays have been fabricated successfully by differential pulse current electro-deposition into the pores of a porous anodic alumina membrane (AAMs). The energy dispersion spectrum, scanning and transmission electron microscopy were utilized to characterize the composition and morphology of the Ni-Cu alloy nanowire arrays. The results reveal that the nanowires in the array are uniform, well isolated and parallel to each other. The catalytic activity of the nanowire electrode arrays for ethanol oxidation was tested and the binary alloy nanowire array possesses good catalytic activity for the electro-oxidation of ethanol. The performance of ethanol electro-oxidation was controlled by varying the Cu content in the Ni-Cu alloy and the Ni-Cu alloy nanowire electrode shows much better stability than the pure Ni one

  12. Electromagnetic field enhancement effects in group IV semiconductor nanowires. A Raman spectroscopy approach

    Pura, J. L.; Anaya, J.; Souto, J.; Prieto, A. C.; Rodríguez, A.; Rodríguez, T.; Periwal, P.; Baron, T.; Jiménez, J.

    2018-03-01

    Semiconductor nanowires (NWs) are the building blocks of future nanoelectronic devices. Furthermore, their large refractive index and reduced dimension make them suitable for nanophotonics. The study of the interaction between nanowires and visible light reveals resonances that promise light absorption/scattering engineering for photonic applications. Micro-Raman spectroscopy has been used as a characterization tool for semiconductor nanowires. The light/nanowire interaction can be experimentally assessed through the micro-Raman spectra of individual nanowires. As compared to both metallic and dielectric nanowires, semiconductor nanowires add additional tools for photon engineering. In particular, one can grow heterostructured nanowires, both axial and radial, and also one could modulate the doping level and the surface condition among other factors than can affect the light/NW interaction. We present herein a study of the optical response of group IV semiconductor nanowires to visible photons. The study is experimentally carried out through micro-Raman spectroscopy of different group IV nanowires, both homogeneous and axially heterostructured (SiGe/Si). The results are analyzed in terms of the electromagnetic modelling of the light/nanowire interaction using finite element methods. The presence of axial heterostructures is shown to produce electromagnetic resonances promising new photon engineering capabilities of semiconductor nanowires.

  13. Coaxial silver nanowire network core molybdenum oxide shell supercapacitor electrodes

    Yuksel, Recep; Coskun, Sahin; Unalan, Husnu Emrah

    2016-01-01

    We present a new hybrid material composed of molybdenum (IV) oxide (MoO 2 ) shell on highly conducting silver nanowire (Ag NW) core in the network form for the realization of coaxial Ag NW/MoO 2 nanocomposite supercapacitor electrodes. Ag NWs were simply spray coated onto glass substrates to form conductive networks and conformal MoO 2 layer was electrodeposited onto the Ag NW network to create binder-free coaxial supercapacitor electrodes. Combination of Ag NWs and pseudocapacitive MoO 2 generated an enhanced electrochemical energy storage capacity and a specific capacitance of 500.7 F/g was obtained at a current density of 0.25 A/g. Fabricated supercapacitor electrodes showed excellent capacity retention after 5000 cycles. The methods and the design investigated herein open a wide range of opportunities for nanowire based coaxial supercapacitors.

  14. Effect of growth temperature on photoluminescence and piezoelectric characteristics of ZnO nanowires

    Water, Walter [Institute of Electro-Optical and Materials Science, National Formosa University, Yunlin 632, Taiwan (China); Fang, T.-H. [Institute of Electro-Optical and Materials Science, National Formosa University, Yunlin 632, Taiwan (China); Institute of Mechanical and Electromechanical Engineering, National Formosa University, Yunlin 632, Taiwan (China)], E-mail: fang.tehua@msa.hinet.net; Ji, L.-W.; Lee, C.-C. [Institute of Electro-Optical and Materials Science, National Formosa University, Yunlin 632, Taiwan (China)

    2009-02-25

    ZnO nanowire arrays were synthesized on Au-coated silicon (1 0 0) substrates by using vapour-liquid-solid process in this work. The effect of growth temperatures on the crystal structure and the surface morphology of ZnO nanowires were investigated by X-ray diffraction and scanning electron microscope. The absorption and optical characteristics of the nanowires were examined by Ultraviolet/Visible spectroscopy, and photoluminescence, respectively. The photoluminescence results exhibited ZnO nanowires had an ultraviolet and blue emission at 383 and 492 nm. Then a nanogenerator with ZnO nanowire arrays was fabricated and demonstrated Schottky-like current-voltage characteristics.

  15. Enhanced Optoelectronic Performance of a Passivated Nanowire-Based Device: Key Information from Real-Space Imaging Using 4D Electron Microscopy

    Khan, Jafar Iqbal; Adhikari, Aniruddha; Sun, Jingya; Priante, Davide; Bose, Riya; Shaheen, Basamat; Ng, Tien Khee; Zhao, Chao; Bakr, Osman; Ooi, Boon S.; Mohammed, Omar F.

    2016-01-01

    Managing trap states and understanding their role in ultrafast charge-carrier dynamics, particularly at surface and interfaces, remains a major bottleneck preventing further advancements and commercial exploitation of nanowire (NW)-based devices. A

  16. A room temperature light source based on silicon nanowires

    Lo Faro, M.J. [CNR-IPCF, Istituto per i Processi Chimico-Fisici, V. le F. Stagno D' Alcontres 37, 98158 Messina (Italy); MATIS CNR-IMM, Istituto per la Microelettronica e Microsistemi, Via Santa Sofia 64, 95123 Catania (Italy); Dipartimento di Fisica e Astronomia, Università di Catania, Via Santa Sofia 64, 95123 Catania (Italy); D' Andrea, C. [MATIS CNR-IMM, Istituto per la Microelettronica e Microsistemi, Via Santa Sofia 64, 95123 Catania (Italy); Messina, E.; Fazio, B. [CNR-IPCF, Istituto per i Processi Chimico-Fisici, V. le F. Stagno D' Alcontres 37, 98158 Messina (Italy); Musumeci, P. [Dipartimento di Fisica e Astronomia, Università di Catania, Via Santa Sofia 64, 95123 Catania (Italy); Franzò, G. [MATIS CNR-IMM, Istituto per la Microelettronica e Microsistemi, Via Santa Sofia 64, 95123 Catania (Italy); Gucciardi, P.G.; Vasi, C. [CNR-IPCF, Istituto per i Processi Chimico-Fisici, V. le F. Stagno D' Alcontres 37, 98158 Messina (Italy); Priolo, F. [MATIS CNR-IMM, Istituto per la Microelettronica e Microsistemi, Via Santa Sofia 64, 95123 Catania (Italy); Dipartimento di Fisica e Astronomia, Università di Catania, Via Santa Sofia 64, 95123 Catania (Italy); Scuola Superiore di Catania, Via Valdisavoia 9, 95123 Catania (Italy); Iacona, F. [MATIS CNR-IMM, Istituto per la Microelettronica e Microsistemi, Via Santa Sofia 64, 95123 Catania (Italy); Irrera, A., E-mail: irrera@me.cnr.it [CNR-IPCF, Istituto per i Processi Chimico-Fisici, V. le F. Stagno D' Alcontres 37, 98158 Messina (Italy)

    2016-08-31

    We synthesized ultrathin Si nanowires (NWs) by metal assisted chemical wet etching, using a very thin discontinuous Au layer as precursor for the process. A bright room temperature emission in the visible range due to electron–hole recombination in quantum confined Si NWs is reported. A single walled carbon nanotube (CNT) suspension was prepared and dispersed in Si NW samples. The hybrid Si NW/CNT system exhibits a double emission at room temperature, both in the visible (due to Si NWs) and the IR (due to CNTs) range, thus demonstrating the realization of a low-cost material with promising perspectives for applications in Si-based photonics. - Highlights: • Synthesis of ultrathin Si nanowires (NWs) by metal-assisted chemical etching • Synthesis of NW/carbon nanotube (CNT) hybrid systems • Structural characterization of Si NWs and Si NW/CNT • Room temperature photoluminescence (PL) properties of Si NWs and of Si NW/CNT • Tuning of the PL properties of the Si NW/CNT hybrid system.

  17. Comparison of the top-down and bottom-up approach to fabricate nanowire-based Silicon/Germanium heterostructures

    Wolfsteller, A.; Geyer, N.; Nguyen-Duc, T.-K.; Das Kanungo, P.; Zakharov, N.D.; Reiche, M.; Erfurth, W.; Blumtritt, H.; Werner, P.; Goesele, U.

    2010-01-01

    Silicon nanowires (NWs) and vertical nanowire-based Si/Ge heterostructures are expected to be building blocks for future devices, e.g. field-effect transistors or thermoelectric elements. In principle two approaches can be applied to synthesise these NWs: the 'bottom-up' and the 'top-down' approach. The most common method for the former is the vapour-liquid-solid (VLS) mechanism which can also be applied to grow NWs by molecular beam epitaxy (MBE). Although MBE allows a precise growth control under highly reproducible conditions, the general nature of the growth process via a eutectic droplet prevents the synthesis of heterostructures with sharp interfaces and high Ge concentrations. We compare the VLS NW growth with two different top-down methods: The first is a combination of colloidal lithography and metal-assisted wet chemical etching, which is an inexpensive and fast method and results in large arrays of homogenous Si NWs with adjustable diameters down to 50 nm. The second top-down method combines the growth of Si/Ge superlattices by MBE with electron beam lithography and reactive ion etching. Again, large and homogeneous arrays of NWs were created, this time with a diameter of 40 nm and the Si/Ge superlattice inside.

  18. Synthesis and properties of silicon nanowire devices

    Byon, Kumhyo

    Silicon nanowire (SiNW) is a very attractive one-dimensional material for future nanoelectronic applications. Reliable control of key field effect transistor (FET) parameters such as conductance, mobility, threshold voltage and on/off ratio is crucial to the applications of SiNW to working logic devices and integrated circuits. In this thesis, we fabricated silicon nanowire field effect transistors (SiNW FETs) and studied the dependence of their electrical transport properties upon various parameters including SiNW growth conditions, post-growth doping, and contact annealing. From these studies, we found how different processes control important FET characteristics. Key accomplishments of this thesis include p-channel enhancement mode FETs, n-channel FETs by post-growth vapor doping and high performance ambipolar devices. In the first part of this work, single crystalline SiNWs were synthesized by thermal evaporation without gold catalysts. FETs were fabricated using both as-grown SiNWs and post-growth n-doped SiNWs. FET from p-type source materials behaves as a p-channel enhancement mode FET which is predominant in logic devices due to its fast operation and low power consumption. Using bismuth vapor, the as-grown SiNWs were doped into n-type materials. The majority carriers in SiNWs can therefore be controlled by proper choice of the vapor phase dopant species. Post-growth doping using vapor phase is applicable to other nanowire systems. In the second part, high performance ambipolar FETs were fabricated. A two step annealing process was used to control the Schottky barrier between SiNW and metal contacts in order to enhance device performance. Initial p-channel SiNW FETs were converted into ambipolar SiNW FETs after contact annealing. Furthermore, significant increases in both on/off ratio and channel mobilities were achieved after contact annealing. Promising device structures to implement ambipolar devices into large scale integrated circuits were proposed

  19. Mesenchymal stem cells cultured on magnetic nanowire substrates

    Perez, Jose E.; Ravasi, Timothy; Kosel, Jürgen

    2017-02-01

    Stem cells have been shown to respond to extracellular mechanical stimuli by regulating their fate through the activation of specific signaling pathways. In this work, an array of iron nanowires (NWs) aligned perpendicularly to the surface was fabricated by pulsed electrodepositon in porous alumina templates followed by a partial removal of the alumina to reveal 2-3 μm of the NWs. This resulted in alumina substrates with densely arranged NWs of 33 nm in diameter separated by 100 nm. The substrates were characterized by scanning electron microscopy (SEM) energy dispersive x-ray analysis and vibrating sample magnetometer. The NW array was then used as a platform for the culture of human mesenchymal stem cells (hMSCs). The cells were stained for the cell nucleus and actin filaments, as well as immuno-stained for the focal adhesion protein vinculin, and then observed by fluorescence microscopy in order to characterize their spreading behavior. Calcein AM/ethidium homodimer-1 staining allowed the determination of cell viability. The interface between the cells and the NWs was studied using SEM. Results showed that hMSCs underwent a re-organization of actin filaments that translated into a change from an elongated to a spherical cell shape. Actin filaments and vinculin accumulated in bundles, suggesting the attachment and formation of focal adhesion points of the cells on the NWs. Though the overall number of cells attached on the NWs was lower compared to the control, the attached cells maintained a high viability (>90%) for up to 6 d. Analysis of the interface between the NWs and the cells confirmed the re-organization of F-actin and revealed the adhesion points of the cells on the NWs. Additionally, a net of filopodia surrounded each cell, suggesting the probing of the array to find additional adhesion points. The cells maintained their round shape for up to 6 d of culture. Overall, the NW array is a promising nanostructured platform for studying and influencing h

  20. Mesenchymal stem cells cultured on magnetic nanowire substrates

    Perez, Jose E.

    2016-12-28

    Stem cells have been shown to respond to extracellular mechanical stimuli by regulating their fate through the activation of specific signaling pathways. In this work, an array of iron nanowires (NWs) aligned perpendicularly to the surface was fabricated by pulsed electrodepositon in porous alumina templates followed by a partial removal of the alumina to reveal 2-3 μm of the NWs. This resulted in alumina substrates with densely arranged NWs of 33 nm in diameter separated by 100 nm. The substrates were characterized by scanning electron microscopy (SEM) energy dispersive x-ray analysis and vibrating sample magnetometer. The NW array was then used as a platform for the culture of human mesenchymal stem cells (hMSCs). The cells were stained for the cell nucleus and actin filaments, as well as immuno-stained for the focal adhesion protein vinculin, and then observed by fluorescence microscopy in order to characterize their spreading behavior. Calcein AM/ethidium homodimer-1 staining allowed the determination of cell viability. The interface between the cells and the NWs was studied using SEM. Results showed that hMSCs underwent a re-organization of actin filaments that translated into a change from an elongated to a spherical cell shape. Actin filaments and vinculin accumulated in bundles, suggesting the attachment and formation of focal adhesion points of the cells on the NWs. Though the overall number of cells attached on the NWs was lower compared to the control, the attached cells maintained a high viability (>90%) for up to 6 d. Analysis of the interface between the NWs and the cells confirmed the re-organization of F-actin and revealed the adhesion points of the cells on the NWs. Additionally, a net of filopodia surrounded each cell, suggesting the probing of the array to find additional adhesion points. The cells maintained their round shape for up to 6 d of culture. Overall, the NW array is a promising nanostructured platform for studying and influencing h

  1. EDITORIAL: Nanowires for energy Nanowires for energy

    LaPierre, Ray; Sunkara, Mahendra

    2012-05-01

    This special issue of Nanotechnology focuses on studies illustrating the application of nanowires for energy including solar cells, efficient lighting and water splitting. Over the next three decades, nanotechnology will make significant contributions towards meeting the increased energy needs of the planet, now known as the TeraWatt challenge. Nanowires in particular are poised to contribute significantly in this development as presented in the review by Hiralal et al [1]. Nanowires exhibit light trapping properties that can act as a broadband anti-reflection coating to enhance the efficiency of solar cells. In this issue, Li et al [2] and Wang et al [3] present the optical properties of silicon nanowire and nanocone arrays. In addition to enhanced optical properties, core-shell nanowires also have the potential for efficient charge carrier collection across the nanowire diameter as presented in the contribution by Yu et al [4] for radial junction a-Si solar cells. Hybrid approaches that combine organic and inorganic materials also have potential for high efficiency photovoltaics. A Si-based hybrid solar cell is presented by Zhang et al [5] with a photoconversion efficiency of over 7%. The quintessential example of hybrid solar cells is the dye-sensitized solar cell (DSSC) where an organic absorber (dye) coats an inorganic material (typically a ZnO nanostructure). Herman et al [6] present a method of enhancing the efficiency of a DSSC by increasing the hetero-interfacial area with a unique hierarchical weeping willow ZnO structure. The increased surface area allows for higher dye loading, light harvesting, and reduced charge recombination through direct conduction along the ZnO branches. Another unique ZnO growth method is presented by Calestani et al [7] using a solution-free and catalyst-free approach by pulsed electron deposition (PED). Nanowires can also make more efficient use of electrical power. Light emitting diodes, for example, will eventually become the

  2. Electrohydrodynamic printing of silver nanowires for flexible and stretchable electronics.

    Cui, Zheng; Han, Yiwei; Huang, Qijin; Dong, Jingyan; Zhu, Yong

    2018-04-19

    A silver nanowire (AgNW) based conductor is a promising component for flexible and stretchable electronics. A wide range of flexible/stretchable devices using AgNW conductors has been demonstrated recently. High-resolution, high-throughput printing of AgNWs remains a critical challenge. Electrohydrodynamic (EHD) printing has been developed as a promising technique to print different materials on a variety of substrates with high resolution. Here, AgNW ink was developed for EHD printing. The printed features can be controlled by several parameters including AgNW concentration, ink viscosity, printing speed, stand-off distance, etc. With this method, AgNW patterns can be printed on a range of substrates, e.g. paper, polyethylene terephthalate (PET), glass, polydimethylsiloxane (PDMS), etc. First, AgNW samples on PDMS were characterized under bending and stretching. Then AgNW heaters and electrocardiogram (ECG) electrodes were fabricated to demonstrate the potential of this printing technique for AgNW-based flexible and stretchable devices.

  3. Collective behaviors of mammalian cells on amine-coated silicon nanowires

    Kim, So Yeon; Yang, Eun Gyeong

    2013-01-01

    Intensive studies with vertical nanowire (NW) arrays have illustrated broad implications for manipulating mammalian cells in vitro, but how cellular responses are influenced by the presence of NWs has not been thoroughly investigated. Here, we address collective cellular behaviors, including surface area of cells, membrane trafficking, focal adhesion distribution and dynamics, and cytoskeletal protein distribution on amine-coated silicon (Si) NWs with different physical properties. The degree of HeLa cell spreading was inversely proportional to the surface area occupied by the NWs, which was not affected by manipulation of membrane trafficking dynamics. In the presence of a diffusive focal complex around the NWs, strong, well organized focal adhesion was hardly visible on the NWs, implying that the cells were interacting weakly with the NW-embedded surface. Furthermore, we found that actin filament formation of the cells on long NWs was not favorable, and this could explain our observation of reduced cell spreading, as well as the decreased number of focal adhesion complexes. Taken together, our results suggest that cells can survive on silicon NWs by adjusting their morphology and adhesion behavior through actively organizing these molecules. (paper)

  4. Tunable Magnetic Properties of Heterogeneous Nanobrush: From Nanowire to Nanofilm

    Ren Y

    2010-01-01

    Full Text Available Abstract With a bottom-up assemble technology, heterogeneous magnetic nanobrushes, consisting of Co nanowire arrays and ferromagnetic Fe70Co30 nanofilm, have been fabricated using an anodic aluminum oxide template method combining with sputtering technology. Magnetic measurement suggests that the magnetic anisotropy of nanobrush depends on the thickness of Fe70Co30 layer, and its total anisotropy originates from the competition between the shape anisotropy of nanowire arrays and nanofilm. Micromagnetic simulation result indicates that the switching field of nanobrush is 1900 Oe, while that of nanowire array is 2700 Oe. These suggest that the nanobrush film can promote the magnetization reversal processes of nanowire arrays in nanobrush.

  5. Mesenchymal stem cells cultured on magnetic nanowire substrates

    Perez, Jose E.; Ravasi, Timothy; Kosel, Jü rgen

    2016-01-01

    Stem cells have been shown to respond to extracellular mechanical stimuli by regulating their fate through the activation of specific signaling pathways. In this work, an array of iron nanowires (NWs) aligned perpendicularly to the surface

  6. Quantification of nanowire uptake by live cells

    Margineanu, Michael B.

    2015-05-01

    Nanostructures fabricated by different methods have become increasingly important for various applications at the cellular level. In order to understand how these nanostructures “behave” and for studying their internalization kinetics, several attempts have been made at tagging and investigating their interaction with living cells. In this study, magnetic iron nanowires with an iron oxide layer are coated with (3-Aminopropyl)triethoxysilane (APTES), and subsequently labeled with a fluorogenic pH-dependent dye pHrodo™ Red, covalently bound to the aminosilane surface. Time-lapse live imaging of human colon carcinoma HCT 116 cells interacting with the labeled iron nanowires is performed for 24 hours. As the pHrodo™ Red conjugated nanowires are non-fluorescent outside the cells but fluoresce brightly inside, internalized nanowires are distinguished from non-internalized ones and their behavior inside the cells can be tracked for the respective time length. A machine learning-based computational framework dedicated to automatic analysis of live cell imaging data, Cell Cognition, is adapted and used to classify cells with internalized and non-internalized nanowires and subsequently determine the uptake percentage by cells at different time points. An uptake of 85 % by HCT 116 cells is observed after 24 hours incubation at NW-to-cell ratios of 200. While the approach of using pHrodo™ Red for internalization studies is not novel in the literature, this study reports for the first time the utilization of a machine-learning based time-resolved automatic analysis pipeline for quantification of nanowire uptake by cells. This pipeline has also been used for comparison studies with nickel nanowires coated with APTES and labeled with pHrodo™ Red, and another cell line derived from the cervix carcinoma, HeLa. It has thus the potential to be used for studying the interaction of different types of nanostructures with potentially any live cell types.

  7. Fabrication and gas sensing properties of vertically aligned Si nanowires

    Mirzaei, Ali; Kang, Sung Yong; Choi, Sun-Woo; Kwon, Yong Jung; Choi, Myung Sik; Bang, Jae Hoon; Kim, Sang Sub; Kim, Hyoun Woo

    2018-01-01

    In this study, a peculiar configuration for a gas sensor consisting of vertically aligned silicon nanowires (VA-Si NWs) synthesized by metal-assisted chemical etching (MACE) is reported. Si NWs were prepared via a facile MACE method and subsequent thermal annealing. Etching was performed by generation of silver nanoparticles (Ag NPs) and subsequent etching in HF/H2O2 aqueous solution; the growth conditions were optimized by changing the process parameters. Highly vertically oriented arrays of Si NWs with a straight-line morphology were obtained, and a top-top electrode configuration was applied. The VA-Si NW gas sensor showed good sensing performance, and the VA-Si NWs exhibited a remarkable response (Rg/Ra = 11.5 ∼ 17.1) to H2 gas (10-50 ppm) at 100 °C which was the optimal working temperature. The formation mechanism and gas sensing mechanism of VA-Si NWs are described. The obtained results can suggest new approaches to making inexpensive, versatile, and portable sensors based on Si NWs having a novel top-top electrode structure that are fully compatible with well-developed Si technologies.

  8. Morphology of self-catalyzed GaN nanowires and chronology of their formation by molecular beam epitaxy

    Galopin, E; Largeau, L; Patriarche, G; Travers, L; Glas, F; Harmand, J C

    2011-01-01

    GaN nanowires are synthesized by plasma-assisted molecular beam epitaxy on Si(111) substrates. The strong impact of the cell orientation relative to the substrate on the nanowire morphology is shown. To study the kinetics of growth, thin AlN markers are introduced periodically during NW growth. These markers are observed in single nanowires by transmission electron microscopy, giving access to the chronology of the nanowire formation and to the time evolution of the nanowire morphology. A long delay precedes the beginning of nanowire formation. Then, their elongation proceeds at a constant rate. Later, shells develop on the side-wall facets by ascending growth of layer bunches which first agglomerate at the nanowire foot.

  9. Oriented epitaxial TiO2 nanowires for water splitting

    Hou, Wenting; Cortez, Pablo; Wuhrer, Richard; Macartney, Sam; Bozhilov, Krassimir N.; Liu, Rong; Sheppard, Leigh R.; Kisailus, David

    2017-06-01

    Highly oriented epitaxial rutile titanium dioxide (TiO2) nanowire arrays have been hydrothermally grown on polycrystalline TiO2 templates with their orientation dependent on the underlying TiO2 grain. Both the diameter and areal density of the nanowires were tuned by controlling the precursor concentration, and the template surface energy and roughness. Nanowire tip sharpness was influenced by precursor solubility and diffusivity. A new secondary ion mass spectrometer technique has been developed to install additional nucleation sites in single crystal TiO2 templates and the effect on nanowire growth was probed. Using the acquired TiO2 nanowire synthesis knowhow, an assortment of nanowire arrays were installed upon the surface of undoped TiO2 photo-electrodes and assessed for their photo-electrochemical water splitting performance. The key result obtained was that the presence of short and dispersed nanowire arrays significantly improved the photocurrent when the illumination intensity was increased from 100 to 200 mW cm-2. This is attributed to the alignment of the homoepitaxially grown nanowires to the [001] direction, which provides the fastest charge transport in TiO2 and an improved pathway for photo-holes to find water molecules and undertake oxidation. This result lays a foundation for achieving efficient water splitting under conditions of concentrated solar illumination.

  10. Controlling growth density and patterning of single crystalline silicon nanowires

    Chang, Tung-Hao; Chang, Yu-Cheng; Liu, Fu-Ken; Chu, Tieh-Chi

    2010-01-01

    This study examines the usage of well-patterned Au nanoparticles (NPs) as a catalyst for one-dimensional growth of single crystalline Si nanowires (NWs) through the vapor-liquid-solid (VLS) mechanism. The study reports the fabrication of monolayer Au NPs through the self-assembly of Au NPs on a 3-aminopropyltrimethoxysilane (APTMS)-modified silicon substrate. Results indicate that the spin coating time of Au NPs plays a crucial role in determining the density of Au NPs on the surface of the silicon substrate and the later catalysis growth of Si NWs. The experiments in this study employed optical lithography to pattern Au NPs, treating them as a catalyst for Si NW growth. The patterned Si NW structures easily produced and controlled Si NW density. This approach may be useful for further studies on single crystalline Si NW-based nanodevices and their properties.

  11. Bipolar resistive switching behaviors of ITO nanowire networks

    Qiang Li

    2016-02-01

    Full Text Available We have fabricated indium tin oxide (ITO nanowire (NW networks on aluminum electrodes using electron beam evaporation. The Ag/ITO-NW networks/Al capacitor exhibits bipolar resistive switching behavior. The resistive switching characteristics of ITO-NW networks are related to the morphology of NWs. The x-ray photoelectron spectroscopy was used to obtain the chemical nature from the NWs surface, investigating the oxygen vacancy state. A stable switching voltages and a clear memory window were observed in needle-shaped NWs. The ITO-NW networks can be used as a new two-dimensional metal oxide material for the fabrication of high-density memory devices.

  12. Nanowire Chemical/Biological Sensors: Status and a Roadmap for the Future.

    Fennell, John F; Liu, Sophie F; Azzarelli, Joseph M; Weis, Jonathan G; Rochat, Sébastien; Mirica, Katherine A; Ravnsbæk, Jens B; Swager, Timothy M

    2016-01-22

    Chemiresistive sensors are becoming increasingly important as they offer an inexpensive option to conventional analytical instrumentation, they can be readily integrated into electronic devices, and they have low power requirements. Nanowires (NWs) are a major theme in chemosensor development. High surface area, interwire junctions, and restricted conduction pathways give intrinsically high sensitivity and new mechanisms to transduce the binding or action of analytes. This Review details the status of NW chemosensors with selected examples from the literature. We begin by proposing a principle for understanding electrical transport and transduction mechanisms in NW sensors. Next, we offer the reader a review of device performance parameters. Then, we consider the different NW types followed by a summary of NW assembly and different device platform architectures. Subsequently, we discuss NW functionalization strategies. Finally, we propose future developments in NW sensing to address selectivity, sensor drift, sensitivity, response analysis, and emerging applications. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Fully transparent thin-film transistor devices based on SnO2 nanowires.

    Dattoli, Eric N; Wan, Qing; Guo, Wei; Chen, Yanbin; Pan, Xiaoqing; Lu, Wei

    2007-08-01

    We report on studies of field-effect transistor (FET) and transparent thin-film transistor (TFT) devices based on lightly Ta-doped SnO2 nano-wires. The nanowire-based devices exhibit uniform characteristics with average field-effect mobilities exceeding 100 cm2/V x s. Prototype nano-wire-based TFT (NW-TFT) devices on glass substrates showed excellent optical transparency and transistor performance in terms of transconductance, bias voltage range, and on/off ratio. High on-currents and field-effect mobilities were obtained from the NW-TFT devices even at low nanowire coverage. The SnO2 nanowire-based TFT approach offers a number of desirable properties such as low growth cost, high electron mobility, and optical transparency and low operation voltage, and may lead to large-scale applications of transparent electronics on diverse substrates.

  14. Catalyst-free, III-V nanowire photovoltaics

    Davies, D. G.; Lambert, N.; Fry, P. W.; Foster, A.; Krysa, A. B.; Wilson, L. R.

    2014-05-01

    We report on room temperature, photovoltaic operation of catalyst-free GaAs p-i-n junction nanowire arrays. Growth studies were first performed to determine the optimum conditions for controlling the vertical and lateral growth of the nanowires. Following this, devices consisting of axial p-i-n junctions were fabricated by planarising the nanowire arrays with a hard baked polymer. We discuss the photovoltaic properties of this proof-of-concept device, and significant improvements to be made during the growth.

  15. ZnO nanowires coated stainless steel meshes as hierarchical photocatalysts for catalytic photodegradation of four kinds of organic pollutants

    Ko, Fu-Hsiang; Lo, Wei-Ju [Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, 30010, Taiwan (China); Chang, Yu-Cheng, E-mail: ychang0127@gmail.com [Department of Materials Science and Engineering, Feng Chia University, Taichung, 40724, Taiwan (China); Guo, Jin-You; Chen, Chien-Ming [Department of Materials Science and Engineering, Feng Chia University, Taichung, 40724, Taiwan (China)

    2016-09-05

    ZnO nanostructures were grown on the stainless steel mesh substrates using an aqueous chemical growth method. The different additives (such as 1,3-diaminopropane and polyethyleneimine) can be used to control the morphology of ZnO nanostructures. ZnO nanowires exhibit very prominent green emission and week UV emission from defect and band gap in the cathodoluminescence spectrum, respectively. The different morphology of ZnO nanostructures on the stainless steel mesh substrates can be used to irradiate UV light for the photocatalytic degradation of four kinds of organic pollutants, such as methylene blue, rhodamine 6G, methyl orange, and 4-nitrophenol. The ZnO nanowires can provide a higher surface-to-volume ratio and stronger defect emission, resulting in their highest photocatalytic performance in 10 W UV light irradiation. The ZnO nanowire arrays on the stainless steel mesh substrates provide a large-scale, facile, low-cost, high surface area, and high photocatalytic efficiency, which shall be of significant value for practical applications of the decomposition of environment pollutants and reusing of wastewater treatment. - Highlights: • ZnO NWs were grown on the stainless steel mesh by aqueous chemical growth method. • Longer ZnO NW arrays have been grown at short reaction time (2 h). • ZnO NWs revealed green emission from surface defect in the CL spectrum. • The different morphologies of ZnO were evaluated organic pollutant degradation. • ZnO NWs were also exhibited great photocatalytic activity and reusability.

  16. The fabrication of ZnO nanowire field-effect transistors combining dielectrophoresis and hot-pressing

    Chang, Y-K; Chau-N H, Franklin

    2009-01-01

    Zinc oxide nanowire field-effect transistors (NW-FETs) were fabricated combining the dielectrophoresis (DEP) and the hot-pressing methods. DEP was used to position both ends of the nanowires on top of the source and the drain electrodes, respectively. Hot-pressing of nanowires on the electrodes was then employed to ensure good contacts between the nanowires and the electrodes. The good device performance achieved with our method of fabrication indicates that DEP combined with hot-pressing has the potential to be applied to the fabrication of flexible electronics on a roll-to-roll basis.

  17. Dislocation-induced nanoparticle decoration on a GaN nanowire.

    Yang, Bing; Yuan, Fang; Liu, Qingyun; Huang, Nan; Qiu, Jianhang; Staedler, Thorsten; Liu, Baodan; Jiang, Xin

    2015-02-04

    GaN nanowires with homoepitaxial decorated GaN nanoparticles on their surface along the radial direction have been synthesized by means of a chemical vapor deposition method. The growth of GaN nanowires is catalyzed by Au particles via the vapor-liquid-solid (VLS) mechanism. Screw dislocations are generated along the radial direction of the nanowires under slight Zn doping. In contrast to the metal-catalyst-assisted VLS growth, GaN nanoparticles are found to prefer to nucleate and grow at these dislocation sites. High-resolution transmission electron microscopy (HRTEM) analysis demonstrates that the GaN nanoparticles possess two types of epitaxial orientation with respect to the corresponding GaN nanowire: (I) [1̅21̅0]np//[1̅21̅0]nw, (0001)np//(0001)nw; (II) [1̅21̅3]np//[12̅10]nw, (101̅0)np//(101̅0)nw. An increased Ga signal in the energy-dispersive spectroscopy (EDS) profile lines of the nanowires suggests GaN nanoparticle growth at the edge surface of the wires. All the crystallographic results confirm the importance of the dislocations with respect to the homoepitaxial growth of the GaN nanoparticles. Here, screw dislocations situated on the (0001) plane provide the self-step source to enable nucleation of the GaN nanoparticles.

  18. Effect of Silicon Nanowire on Crystalline Silicon Solar Cell Characteristics

    Zahra Ostadmahmoodi Do

    2016-06-01

    Full Text Available Nanowires (NWs are recently used in several sensor or actuator devices to improve their ordered characteristics. Silicon nanowire (Si NW is one of the most attractive one-dimensional nanostructures semiconductors because of its unique electrical and optical properties. In this paper, silicon nanowire (Si NW, is synthesized and characterized for application in photovoltaic device. Si NWs are prepared using wet chemical etching method which is commonly used as a simple and low cost method for producing nanowires of the same substrate material. The process conditions are adjusted to find the best quality of Si NWs. Morphology of Si NWs is studied using a field emission scanning electron microscopic technique. An energy dispersive X-Ray analyzer is also used to provide elemental identification and quantitative compositional information. Subsequently, Schottky type solar cell samples are fabricated on Si and Si NWs using ITO and Ag contacts. The junction properties are calculated using I-V curves in dark condition and the solar cell I-V characteristics are obtained under incident of the standardized light of AM1.5. The results for the two mentioned Schottky solar cell samples are compared and discussed. An improvement in short circuit current and efficiency of Schottky solar cell is found when Si nanowires are employed.

  19. Tunneling and Transport in Nanowires

    Goldman, Allen M.

    2016-01-01

    The goal of this program was to study new physical phenomena that might be relevant to the performance of conductive devices and circuits of the smallest realizable feature sizes possible using physical rather than biological techniques. Although the initial scientific work supported involved the use of scanning tunneling microscopy and spectroscopy to ascertain the statistics of the energy level distribution of randomly sized and randomly shaped quantum dots, or nano-crystals, the main focus was on the investigation of selected properties, including superconductivity, of conducting and superconducting nanowires prepared using electron-beam-lithography. We discovered a magnetic-field-restoration of superconductivity in out-of-equilibrium nanowires driven resistive by current. This phenomenon was explained by the existence of a state in which dissipation coexisted with nonvanishing superconducting order. We also produced ultra-small superconducting loops to study a predicted anomalous fluxoid quantization, but instead, found a magnetic-field-dependent, high-resistance state, rather than superconductivity. Finally, we developed a simple and controllable nanowire in an induced charged layer near the surface of a masked single-crystal insulator, SrTiO_3. The layer was induced using an electric double layer transistor employing an ionic liquid (IL). The transport properties of the induced nanowire resembled those of collective electronic transport through an array of quantum dots.

  20. Tunneling and Transport in Nanowires

    Goldman, Allen M. [Univ. of Minnesota, Minneapolis, MN (United States)

    2016-08-16

    The goal of this program was to study new physical phenomena that might be relevant to the performance of conductive devices and circuits of the smallest realizable feature sizes possible using physical rather than biological techniques. Although the initial scientific work supported involved the use of scanning tunneling microscopy and spectroscopy to ascertain the statistics of the energy level distribution of randomly sized and randomly shaped quantum dots, or nano-crystals, the main focus was on the investigation of selected properties, including superconductivity, of conducting and superconducting nanowires prepared using electron-beam-lithography. We discovered a magnetic-field-restoration of superconductivity in out-of-equilibrium nanowires driven resistive by current. This phenomenon was explained by the existence of a state in which dissipation coexisted with nonvanishing superconducting order. We also produced ultra-small superconducting loops to study a predicted anomalous fluxoid quantization, but instead, found a magnetic-field-dependent, high-resistance state, rather than superconductivity. Finally, we developed a simple and controllable nanowire in an induced charged layer near the surface of a masked single-crystal insulator, SrTiO3. The layer was induced using an electric double layer transistor employing an ionic liquid (IL). The transport properties of the induced nanowire resembled those of collective electronic transport through an array of quantum dots.